Enhanced electrical and optical properties of CdS:Na thin films by photochemical deposition

Science.gov (United States)

Kumar, V. Nirmal; Suriakarthick, R.; Gopalakrishnan, R.; Hayakawa, Y.

2017-06-01

CdS:Na thin film was deposited on a glass substrate by photochemical deposition from aqueous solution contained CdSO4.5H2O and Na2S2O3 as cation and anion sources, respectively. The anion source Na2S2O3 served as Na dopant source. The deposited film exhibited cubic phase of CdS and incorporation of Na was revealed from X-ray diffraction study. The incorporation of Na in CdS changed the surface morphology from spherical to nano rods. CdS:Na thin film showed blue shift in its absorption spectrum which was more desirable for transmitting higher energy photons (visible region) in thin film solar cells. The Raman analysis confirmed 1 LO and 2 LO process at 297 and 593 cm-1, respectively. The carrier concentration of CdS increased with the inclusion of Na and its resistivity value decreased. Both the electrical and optical properties of CdS were enhanced in CdS:Na thin films which was desirable as a window layer material for photovoltaic application.

Photoelectrochemical (PEC) studies on CdSe thin films ...

Indian Academy of Sciences (India)

TECS

Thin films of CdSe were deposited by potentiostatic mode on different substrates such as ... trodeposited from aqueous acidic baths, but very few ... washed with liquid detergent (labolene) followed by ul- .... increases the ionic mobilities and hence the conductivity ... A PEC cell of configuration, CdSe/1 M polysulphide/.

Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

International Nuclear Information System (INIS)

Pawar, S.M.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

2007-01-01

The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH 3 COO) 2 .Cd.2H 2 O, SeO 2 , and FeCl 3 at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E g from 1.95 to 1.65 eV

Chemical synthesis of porous web-structured CdS thin films for photosensor applications

Energy Technology Data Exchange (ETDEWEB)

Gosavi, S.R., E-mail: srgosavi.taloda@gmail.com [C. H. C. Arts, S. G. P. Commerce, and B. B. J. P. Science College, Taloda, Dist., Nandurbar 425413, M. S. (India); Nikam, C.P. [B.S.S.P.M.S. Arts, Commerce and Science College, Songir, Dist., Dhule 424309, M. S. (India); Shelke, A.R.; Patil, A.M. [Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Ryu, S.-W. [Department of Physics, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Bhat, J.S. [Department of Physics, Karnatak University, Dharwad 580003 (India); Deshpande, N.G., E-mail: nicedeshpande@yahoo.co.in [Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

2015-06-15

The photo-activity of chemically deposited cadmium sulphide (CdS) thin film has been studied. The simple chemical route nucleates the CdS films with size up to the mean free path of the electron. Growth Kinematics of crystalline hexagonal CdS phase in the thin film form was monitored using X-ray diffraction. The time limitation set for the formation of the amorphous/nano-crystalline material is 40 and 60 min. Thereafter enhancement of the crystalline orientation along the desired plane was identified. Web-like porous structured surface morphology of CdS thin film over the entire area is observed. With decrease in synthesis time, increase of band gap energy i.e., a blue spectral shift was seen. The activation energy of CdS thin film at low and high temperature region was examined. It is considered that this activation energy corresponds to the donor levels associated with shallow traps or surface states of CdS thin film. The photo-electrochemical performance of CdS thin films in polysulphide electrolyte showed diode-like characteristics. Exposure of light on the CdS electrode increases the photocurrent. This suggests the possibility of production of free carriers via excited ions and also the light harvesting mechanism due to porous web-structured morphology. These studies hint that the obtained CdS films can work as a photosensor. - Highlights: • Photoactivity of chemically synthesized cadmium sulphide (CdS) thin films was studied. • Web-like porous structured surface morphology of CdS thin film over the entire area was observed. • Blue spectral shift with lowering of the synthesis time suggests films can act as a window layer over the absorber layer. • Porous web-structured CdS thin films can be useful in light harvesting.

Chemical synthesis of porous web-structured CdS thin films for photosensor applications

International Nuclear Information System (INIS)

Gosavi, S.R.; Nikam, C.P.; Shelke, A.R.; Patil, A.M.; Ryu, S.-W.; Bhat, J.S.; Deshpande, N.G.

2015-01-01

The photo-activity of chemically deposited cadmium sulphide (CdS) thin film has been studied. The simple chemical route nucleates the CdS films with size up to the mean free path of the electron. Growth Kinematics of crystalline hexagonal CdS phase in the thin film form was monitored using X-ray diffraction. The time limitation set for the formation of the amorphous/nano-crystalline material is 40 and 60 min. Thereafter enhancement of the crystalline orientation along the desired plane was identified. Web-like porous structured surface morphology of CdS thin film over the entire area is observed. With decrease in synthesis time, increase of band gap energy i.e., a blue spectral shift was seen. The activation energy of CdS thin film at low and high temperature region was examined. It is considered that this activation energy corresponds to the donor levels associated with shallow traps or surface states of CdS thin film. The photo-electrochemical performance of CdS thin films in polysulphide electrolyte showed diode-like characteristics. Exposure of light on the CdS electrode increases the photocurrent. This suggests the possibility of production of free carriers via excited ions and also the light harvesting mechanism due to porous web-structured morphology. These studies hint that the obtained CdS films can work as a photosensor. - Highlights: • Photoactivity of chemically synthesized cadmium sulphide (CdS) thin films was studied. • Web-like porous structured surface morphology of CdS thin film over the entire area was observed. • Blue spectral shift with lowering of the synthesis time suggests films can act as a window layer over the absorber layer. • Porous web-structured CdS thin films can be useful in light harvesting

Study of structural and optical properties of Cd{sub 1-x}Zn{sub x}Se thin films

Energy Technology Data Exchange (ETDEWEB)

Wahab, L.A., E-mail: aly_lo2003@yahoo.com [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt); Zayed, H.A. [University Collage of Women for Art, Science and Education, Ain Shams University, Cairo (Egypt); El-Galil, A.A. Abd [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

2012-06-01

Cd{sub 1-x}Zn{sub x}Se (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient {alpha} and the optical band gap E{sub g}. The linear relation of ({alpha}h{upsilon}){sup 2} as a function of photon energy h{upsilon} for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity {sigma}{sub opt}, complex dielectric constant, relaxation time {tau} and dissipation factor tan{delta} were determined. The optical dispersion parameters E{sub 0}, E{sub d} were determined according to Wemple and Di Domenico method. - Highlights: Black-Right-Pointing-Pointer ZnSe thin film has cubic zinc blende structure while CdSe and Cd{sub 0.5}Zn{sub 0.5}Se thin films have hexagonal structure. Black-Right-Pointing-Pointer Grain size of Cd{sub 1-x}Zn{sub x}Se decreases with increasing x (x = 0, 0.5 and 1). Black-Right-Pointing-Pointer Optical band gap increases with increasing x.

Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

Science.gov (United States)

Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

2018-05-01

CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

Optical properties of CdS thin films by (SILAR) method

International Nuclear Information System (INIS)

Ates, A.; Gurbulak, B.; Yildirim, M.

2004-01-01

Full text: CdS thin film was grown by Successive ionic layer adsorption and reaction (SILAR) technique on quartz substrate. The film homogeneous of film is good and the film colour obtained as orange. Optical properties of CdS thin film has been investigated as a function of temperature in the temperature range 10-320 K with 10 K steps. The band gap energy decreased with increasing temperature

Optical and electrical properties of Zn{sub 1-x}Cd{sub x}O thin films

Energy Technology Data Exchange (ETDEWEB)

Joishy, Sumanth; Rajendra, B.V. [Manipal University, Department of Physics, Manipal Institute of Technology, Manipal (India)

2017-11-15

This report includes comprehensive studies on the influence of cadmium doping level of structure, surface morphology, optical and electrical properties of synthesized Zn{sub 1-x}Cd{sub x}O thin films by simple and inexpensive spray pyrolysis method under optimized deposition conditions using zinc acetate dihydrate and cadmium acetate dihydrate as precursors. All deposited films were polycrystalline in nature. The deposits were having 20-50% of the Cd content-shown mixture of hexagonal-cubic phases. However, with increasing Cd concentration only cubic phases were observed. The films have a fibrous structure change to the spherical nano-structure when doping level is more than 10% in the deposits. The composition of the Zn{sub x}Cd{sub 1-x}O-deposited films was confirmed by EDAX spectrum. Optical transmittance of deposits in the visible range was decreased with increasing Cd dopant. The change of energy band gap of Cd-doped ZnO films from 3.01 to 2.29 eV was observed. A systematic increase of the films n-type electrical conductivity was noticed due to increasing carrier concentration in the deposits except for 40% of Cd doping. (orig.)

Comprehensive study of growth mechanism and properties of low Zn content Cd{sub 1-x}Zn{sub x}S thin films by chemical bath

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, Carlos Anibal [Multidisciplinary Research Institute in Science and Technology, Ineergias, University of La Serena (Chile); Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco [Department of Physics, Faculty of Physical and Mathematical Sciences, University of Concepcion (Chile); Trejo-Cruz, Cuauhthemoc [Department of Physics, Faculty of Sciences, University of Biobio, Concepcion (Chile); Aragon, Luis E.; Sirena, Martin [Centro Atomico Bariloche & Instituto Balseiro, CNEA & Univ. Nac. de Cuyo, Bariloche, Rio Negro (Argentina); Delplancke, Marie-Paule [4MAT, Universite Libre de Bruxelles, Brussels (Belgium); Carrasco, Claudia [Department of Materials Engineering, Faculty of Engineering, University of Concepcion (Chile)

2016-11-15

Cd{sub 1-x}Zn{sub x}S thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd{sub 1-x}Zn{sub x}S and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd{sub 1-x}Zn{sub x}S thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd{sub 1-x}Zn{sub x}S thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd{sub 1-x}Zn{sub x}S thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd{sub 1-x}Zn{sub x}S thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd{sub 1-x}Zn{sub x}S thin films, with the influence of Zn(OH){sub 2} formation being more important as Zn in solution increases. (author)

Optical properties and surface topography of CdCl2 activated CdTe thin films

Science.gov (United States)

Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-05-01

The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

Physical properties and characterization of Ag doped CdS thin films

International Nuclear Information System (INIS)

Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

2012-01-01

Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

Structural, morphological and optical properties of Na and K dual doped CdS thin film

International Nuclear Information System (INIS)

Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

2012-01-01

Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

Target swapping in PLD: An efficient approach for CdS/SiO2 and CdS:Ag(1%)/SiO2 nanocomposite thin films with enhanced luminescent properties

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2017-01-01

A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO 2 and CdS:Ag(1%)/SiO 2 (i.e. 1%Ag doped CdS/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiencies of emission from pristine CdS:SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO 2 (deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is achieved from deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiency of

Composition and performance of thin film CdSe electrodeposited from selenosulfite solution

International Nuclear Information System (INIS)

Szabo, J.P.; Simms, D.; Cocivera, M.

1985-01-01

Cathodic electrodeposition of thin film CdSe from aqueous selenosulfite solution has been studied as function of solution composition and electrode potential. The Cd/Se ratio has been analyzed using polarography and Rutherford backscattering spectroscopy. Polarography gives a compostion averaged over the whole film (2cm 2 ) while RBS gives local surface composition (1 mm 2 ). The average Cd/Se ratio is 1.1, but some variation was found to occur across the surface of film (0.82 to 1.2)

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

International Nuclear Information System (INIS)

Wahab, L.A.; Farrag, A.A.; Zayed, H.A.

2012-01-01

Cd 1-x Zn x Se (x=0, 0.5 and 1) thin films of thickness 300 nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10-5 Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80 Hz to 5 MHz and temperature range from 300 K to 420 K. AC conductivity increases linearly with the frequency according to the power relation σ a c (ψ)=A (ψ) s . The dielectric constant and loss show low values at high frequencies. The relaxation time t, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.

A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

Directory of Open Access Journals (Sweden)

Ameen M. Ali

Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Energy Technology Data Exchange (ETDEWEB)

Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

2014-11-28

The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

Temperature dependent structural, luminescent and XPS studies of CdO:Ga thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Moholkar, A.V.; Agawane, G.L.; Sim, Kyu-Ung; Kwon, Ye-bin; Choi, Doo Sun; Rajpure, K.Y.; Kim, J.H.

2010-01-01

Research highlights: → The CdO:Ga thin films seems an alternative to traditional TCO materials used in photovoltaic applications. This work deals the effect of deposition temperature on sprayed CdO:Ga films with respect to the structural, luminescent and XPS studies. → The crystalline quality of the GCO films improves with deposition temperature. → The oxygen vacancies are responsible for n-type conductivity and green emission. → The minimum resistivity, highest carrier concentration and mobility are 1.9 x 10 -4 Ω cm, 11.7 x 10 21 cm -3 and 27.64 cm 2 V -1 s -1 , respectively. - Abstract: The structural, compositional, photoluminescent and XPS properties of CdO:Ga thin films deposited at temperatures ranging from 275 to 350 o C, using spray pyrolysis are reported. X-ray diffraction characterization of as-deposited GCO thin films reveals that films are of cubic structure with a (2 0 0) preferred orientation. The crystalline quality of the GCO films improves and the grain size increases with deposition temperature. The EDS analyses confirm oxygen deficiency present in the film and are responsible for n-type conductivity. The photoluminescence spectra demonstrated that the green emission peaks of CdO thin films are centered at 482 nm. The relative intensity of these peaks is strongly dependent on the deposition temperature. Oxygen vacancies are dominant luminescent centers for green emission in CdO thin films. The XPS measurement shows the presence of Cd, Ga, O and C elements and confirms that CdO:Ga films are cadmium-rich.

Electro-optical properties of Cd1-xZnxS films and fabrication of Cd1-xZnxS/InP heterojunctions

International Nuclear Information System (INIS)

Pal, A.K.; Dhar, A.; Mondal, A.; Basak, R.L.; Chaudhuri, S.

1988-01-01

The authors describe Cd 1-x Zn x S films (0 ≤ x ≤ 0.2) characterized by electrical and optical measurements to obtain optimum deposition condition for device fabrication on p-type single crystal InP (Zn doped) with (100) orientation. The devices were studied by I-V, C-V and spectral response measurements

Characterization of nanostructured photosensitive (NiS)x(CdS)(1-x) composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route

International Nuclear Information System (INIS)

Ubale, A.U.; Bargal, A.N.

2011-01-01

Highlights: → Thin films of (NiS) x (CdS) (1-x) with variable composition (x = 1 to 0) were deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. → The structural, surface morphological and electrical characterizations of the as deposited and annealed films were studied. → The bandgap and activation energy of annealed (NiS) x (CdS) (1-x) film decrease with improvement in photosensitive nature. -- Abstract: Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS) x (CdS) (1-x) with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS) x (CdS) (1-x) films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS) x (CdS) (1-x) thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS) x (CdS) (1-x) film decrease with improvement in photosensitive nature.

Deposition and characterization of (Cd sub(x) Zn sub(1-x)) S thin films

International Nuclear Information System (INIS)

Ferreira, C.L.

1984-01-01

Thin films of (Cd sub(x) Zn sub(1-x)) S were deposited on the substrates of soda-lime glass and borosilicate glass by coevaporation of CdS and ZnS, using the technique of hot wall. The temperatures for substrate (200 0 C), wall (350 0 C), CdS source (900 0 -1000 0 C) and ZnS source (900 0 -1200 0 C) were found to be optimum for formation of the films with deposition rates in the range of 0.5 μm.min -1 . The films obtained were with Wurtzite structure, with the crystallographic planes oriented in (001) direction. A linear variation of the parameter C 0 of hexagonal lattice with the concentration of Zn, in the range of 20% to 60%, was observed. For lower and higher concentration outside this range there was a tendency of saturation of C 0 . Measurements of Hall voltage and resistivity demonstrated the mobility and carrier concentration in the range of 10-40 cm 2 v -1 sec -1 and 1.45 x 10 19 - 3.83 x 10 20 cm -3 , respectively, whereas the resistivity of the films ranged from 2.11 x 10 -2 Ω.cm for the Zn concentration variation from 20% to 70%. Measurements of optical absorption revealed linear variation of refractive index of the films with Zn concentration for the wavelenght in the range of 0.5 to 2.0 μm. (Cd sub(x) Zn sub(1-x)) S films with 0.7 2 S. (Author) [pt

Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

International Nuclear Information System (INIS)

Tariq, G.H.; Anis-ur-Rehman, M.

2011-01-01

The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

Target swapping in PLD: An efficient approach for CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposite thin films with enhanced luminescent properties

Energy Technology Data Exchange (ETDEWEB)

Saxena, Nupur, E-mail: n1saxena@gmail.com [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 (India); Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 (India); Department of Nano Sciences and Materials, Central University of Jammu, Rahya-Suchani (Bagla), Samba, 181143 Jammu, J& K (India); Gupta, Vinay [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 (India)

2017-06-15

A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} (i.e. 1%Ag doped CdS/SiO{sub 2}) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO{sub 2} are used to deposit CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO{sub 2} in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposites. The efficiencies of emission from pristine CdS:SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO{sub 2} (deposit CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2}) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO{sub 2} are used to deposit CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO{sub 2} in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is

Electrodeposition and characterization of CdSe{sub x}Te{sub 1-x} semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Faculty of Sciences, Laboratory of Materials Physics, Dept. of Physics, Rabat (Morocco)

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe{sub x}Te{sub 1-x} (0{<=}x{<=}1) can be used for various technical applications in particular for the conversion of solar energy in photoelectrochemical devices. They have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 deg. C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe{sub x}Te{sub 1-x} films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Ahmet PEKSÖZ

2016-08-01

Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

Tailoring and optimization of optical properties of CdO thin films for gas sensing applications

Science.gov (United States)

Rajput, Jeevitesh K.; Pathak, Trilok K.; Kumar, V.; Swart, H. C.; Purohit, L. P.

2018-04-01

Cadmium oxide (CdO) thin films have been deposited onto glass substrates using different molar concentrations (0.2 M, 0.5 M and 0.8 M) of cadmium acetate precursor solutions using a sol-gel spin coating technique. The structural, morphological, optical and electrical results are presented. X-ray diffraction patterns indicated that the CdO films of different molarity have a stable cubic structure with a (111) preferred orientation at low molar concentration. Scanning electron microscopy images revealed that the films adopted a rectangular to cauliflower like morphology. The optical transmittance of the thin films was observed in the range 200-800 nm and it was found that the 0.2 M CdO thin films showed about 83% transmission in the visible region. The optical band gap energy of the thin films was found to vary from 2.10 to 3.30 eV with the increase in molar concentration of the solution. The electrical resistance of the 0.5 M thin film was found to be 1.56 kΩ. The oxygen sensing response was observed between 20-33% in the low temperature range (32-200 °C).

Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

Energy Technology Data Exchange (ETDEWEB)

Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

2011-10-17

Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

Effect of protic solvents on CdS thin films prepared by chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Yao, Pin-Chuan, E-mail: pcyao@mail.dyu.edu.tw; Chen, Chun-Yu

2015-03-31

In this study, cadmium sulfide (CdS) thin films are grown on glass substrates by chemical bath deposition (CBD) in an aqueous bath containing 10–20 vol.% alcohol. The roles of ethanol as a protic solvent that substantially improves the quality of films are explored extensively. The deposited films in an alcohol bath are found to be more compact and smoother with smaller CdS grains. The X-ray diffractograms of the samples confirm that all films were polycrystalline with mixed wurtzite (hexagonal) and zinkblende (cubic) phases. Raman spectra indicate that, for a film deposited in an alcohol bath, the position of 1LO is closer to the value for single crystal CdS, indicating that these films have a high degree of crystallinity. The as-deposited CdS thin films in a 10 vol.% alcohol bath were found to have the highest visible transmittance of 81.9%. XPS analysis reveals a stronger signal of C1s for samples deposited in the alcohol baths, indicating that there are more carbonaceous residues on the films with protic solvent than on the films with water. A higher XPS S/Cd atomic ratio for films deposited in an alcohol bath indicates that undesirable surface reactions (leading to sulfur containing compounds other than CdS) occur less frequently over the substrates. - Highlights: • Study of CBD-CdS films grown in an alcohol-containing aqueous bath is reported. • The deposited films in an alcohol bath are more compact with smaller CdS grains. • Raman spectra show that in an alcohol bath, the CdS film has a better crystallinity. • XPS reveals more carbon residues remain on the films deposited using alcohol bath. • In an alcohol bath, the undesirable surface reactions with Cd ions were hindered.

Novel patterning of CdS / CdTe thin film with back contacts for ...

Indian Academy of Sciences (India)

Murugaiya Sridar Ilango

2018-03-12

Mar 12, 2018 ... The heterostructure of patterned CdS/CdTe thin films with back contact have been devised with electron ..... The carrier continuity equation is important for the car- ..... Biosensors, and Info-Tech Sensors and Systems 2015,.

Photodiode Based on CdO Thin Films as Electron Transport Layer

Science.gov (United States)

Soylu, M.; Kader, H. S.

2016-11-01

Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

Science.gov (United States)

Dhere, Neelkanth G.

1997-03-01

Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

International Nuclear Information System (INIS)

Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

2005-01-01

CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

P-MoS2 / n-CdS thin film heterojunction

International Nuclear Information System (INIS)

El Maliki, H.; Gourmelon, E.; Bernede, J.C.; Pouzet, J.; Mebarki, M.; Khelil, A.; Zoaeter, M.

1999-01-01

Full text.Layered transition metal dichacolgenides such as MoS 2 are semiconductors that can be good candidates for solar energy conversion. Photo-electrochemical cells based on single crystals have achieved and efficiency of 17% (1). However, up to day, no solid rectifying contact has been put in evidence in the case of MoS 2 thin films.. Recently we have shown that such high crystalline quality MoS 2 films can be obtained onto textured tungsten slides. This allowed to try to grow sandwich rectifying structures. The bottom electrode will be W, MoS 2 being p-type, the n type film used was CdS and the upper electrode was indium. W foils textured along the (h00) direction were used as substrate and bottom electrode. The use of a W (textured) substrate induces the texturation of the MoS 2 films along the (001) direction when after evaporation of the constituents the films were annealed at T=1073 K for half an hour under argon atmosphere. Upon the MoS 2 a CdS thin film was deposited by chemical bath deposition (CBD). CdS thin films were prepared classically from a solution of cadmium sulfate, thiourea in hydrazine and ammonia. Ammonia was used adjust the solution pH to a value between 9 and 10. Bath temperature has been held constant at 343 K. Thin deposit films of CdS were yellow colored. They were constituted of an homogenous and adherent layer with a thickness of about 100 nm. It has been shown by x-ray diffraction the they were crystallized in their hexagonal structure. At least an indium film was deposited in order to achieve the structure M/MoS 2 p/CdSn/M. In order to check the equality of the W/MoS 2 contact, W/MoS 2 /W samples were also carried out by sputtering deposition of the tungsten upper electrode (300 nm thick). The thickness of the MoS 2 layers was about 500 nm. The J-V characteristics of a W/MoS 2 /W sample are ohmic. Moreover the resistance deduced from the slope ΔV/ΔI increases when the temperature decreases, which shows that there is not any

Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

Directory of Open Access Journals (Sweden)

Wagner Anacleto Pinheiro

2006-03-01

Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

Characterization of nanostructured photosensitive (NiS){sub x}(CdS){sub (1-x)} composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route

Energy Technology Data Exchange (ETDEWEB)

Ubale, A.U., E-mail: ashokuu@yahoo.com [Nanostructured Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444604, Maharashtra (India); Bargal, A.N. [Nanostructured Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444604, Maharashtra (India)

2011-07-15

Highlights: {yields} Thin films of (NiS){sub x}(CdS){sub (1-x)} with variable composition (x = 1 to 0) were deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. {yields} The structural, surface morphological and electrical characterizations of the as deposited and annealed films were studied. {yields} The bandgap and activation energy of annealed (NiS){sub x}(CdS){sub (1-x)} film decrease with improvement in photosensitive nature. -- Abstract: Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS){sub x}(CdS){sub (1-x)} with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS){sub x}(CdS){sub (1-x)} films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS){sub x}(CdS){sub (1-x)} thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS){sub x}(CdS){sub (1-x)} film decrease with improvement in photosensitive nature.

Influence of precursor concentration on physical properties of CdO thin films prepared by spray pyrolysis technique using nebulizer

Energy Technology Data Exchange (ETDEWEB)

Anitha, M.; Amalraj, L.; Anitha, N. [Virudhunagar Hindu Nadar' s Senthikumara Nadar College (Autonomous), Department of Physics, Virudhunagar, Tamilnadu (India)

2017-12-15

Cadmium oxide (CdO) thin films were prepared with different concentrations of precursor solution (0.05, 0.1, 0.15, 0.2 and 0.25 M, respectively) at the optimized temperature (200 C) using the nebulized spray pyrolysis technique to obtain better crystallinity in polycrystalline thin films on amorphous glass substrates. The XRD characterization of those samples revealed a preferential orientation along the (111) plane having a cubic structure. The scanning electron microscopy (SEM) analysis displayed that all the as-deposited thin films have spherical shaped grains. The transmittance of the as-deposited CdO thin films had decreased from 88 to 71% for longer wavelength regions (600-900 nm) as the precursor concentration had increased and then increased for higher precursor concentration. The optical band gap was found to lie between 2.45 and 2.40 eV belonging to direct transition for those thin films. The presence of Cd-O bond (540 cm{sup -1}) was confirmed by FTIR spectrum. The emission properties of CdO thin films were studied by luminescence spectrum recorded at room temperature. A maximum carrier concentration and minimum resistivity values of 4.743 x 10{sup 19} cm{sup -3} and 1.06 x 10{sup -3} Ω-cm, respectively, were obtained for 0.2 M precursor concentration. These CdO thin films have high optical transmittance and high room temperature conductivity, which can be used as the TCO and Solar cell (window layer) material. (orig.)

Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

International Nuclear Information System (INIS)

Mayo, B.

1998-01-01

We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350C and completely recrystallized after the same treatment at 400C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

International Nuclear Information System (INIS)

Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

2012-01-01

Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

Optimization of deposition conditions of CdS thin films using response surface methodology

Energy Technology Data Exchange (ETDEWEB)

Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Güler, Nuray [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

2014-03-15

Highlights: • Statistical methods used for optimization of CdS deposition parameters. • The morphology of the films was smooth, homogeneous and continuous. • Optimal conditions found as pH 11, stirring speed:361 rpm and deposition time: 55 min. • CdS thin film band gap value was 2.72 eV under the optimum conditions. -- Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by chemical bath deposition (CBD) technique under different pH, stirring speed and deposition time. Response Surface Methodology (RSM) and Central Composite Design (CCD) were used to optimization of deposition parameters of the CdS thin films. RSM and CCD were also used to understand the significance and interaction of the factors affecting the film quality. Variables were determined as pH, stirring speed and deposition time. The band gap was chosen as response in the study. Influences of the variables on the band gap and the film quality were investigated. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition conditions parameters such as pH (10.2–11.8), stirring speed (132–468 rpm) and deposition time (33–67 min) on the band gap of the films. The samples were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and ultraviolet–visible spectroscopy (UV–vis) measurements. The optimal conditions for the deposition parameters of the CdS thin films have been found to be: pH 11, 361 of stirring speed and 55 min of deposition time. Under the optimal conditions theoretical (predicted) band gap of CdS (2.66 eV) was calculated using optimal coded values from the model and the theoretical value is good agreement with the value (2.72 eV) obtained by verification experiment.

Solar cells based on electrodeposited thin films of ZnS, CdS, CdSSe and CdTe

Science.gov (United States)

Weerasinghe, Ajith R.

The motivations of this research were to produce increased efficiency and low-cost solar cells. The production efficiency of Si solar cells has almost reached their theoretical limit, and reducing the manufacturing cost of Si solar cells is difficult to achieve due to the high-energy usage in material purifying and processing stages. Due to the low usage of materials and input energy, thin film solar cells have the potential to reduce the costs. CdS/CdTe thin film solar cells are already the cheapest on $/W basis. The cost of CdTe solar cells can be further reduced if all the semiconducting layers are fabricated using the electrodeposition (ED) method. ED method is scalable, low in the usage of energy and raw materials. These benefits lead to the cost effective production of semiconductors. The conventional method of fabricating CdS layers produces Cd containing waste solutions routinely, which adds to the cost of solar cells.ZnS, CdS and CdS(i-X)Sex buffer and window layers and CdTe absorber layers have been successfully electrodeposited and explored under this research investigation. These layers were fully characterised using complementary techniques to evaluate the material properties. Photoelectrochemical (PEC) studies, optical absorption, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, atomic force microscopy (AFM) and Raman spectroscopy were utilised to evaluate the material properties of these solid thin film layers. ZnS and CdS thin film layers were electrodeposited from Na-free chemical precursors to avoid the group I element (Na) to reduce deterioration of CdTe devices. Deposition parameters such as, growth substrates, temperature, pH, growth cathodic voltage, stirring rate, time and chemical concentrations were identified to fabricate the above semiconductors. To further optimise these layers, a heat treatment process specific to the material was developed. In addition

Thermal and structural properties of spray pyrolysed CdS thin film

Indian Academy of Sciences (India)

Unknown

Thermal diffusivity and conductivity in these films decrease at least two orders compared with bulk. ... Afifi et al. (1986) prepared evaporated thin film on glass substrate. ... phase of CdS and the identification of the peaks indicate that the film is ...

Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

International Nuclear Information System (INIS)

Nazir, Adnan; Toma, Andrea; Shah, Nazar Abbas; Panaro, Simone; Butt, Sajid; Sagar, Rizwan ur Rehman; Raja, Waseem; Rasool, Kamran; Maqsood, Asghari

2014-01-01

Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10 6 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10 3 Ω cm) against a 20% cut in optical transmission

Optical Properties of Al- and Sb-Doped CdTe Thin Films

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

Chemical synthesis and characterization of CdSe thin films deposited by SILAR technique for optoelectronic applications

Directory of Open Access Journals (Sweden)

K.B. Chaudhari

2016-12-01

Full Text Available CdSe thin films were deposited on the glass substrate by successive ionic layer adsorption and reaction (SILAR method. Different sets of the film are prepared by changing the number of immersion cycles as 30, 40, 50 and 60. Further the effect of a number of immersion cycles on the characteristic structural, morphological, optical and electrical properties of the films are studied. The XRD studies revealed that the deposited films showed hexagonal structure with most prominent reflection along (1 0 1 plane. Moreover, the peak intensity of (1 0 1 plane is found to be increased as the number of immersion cycles is increased. All the thin films look relatively smooth and homogeneous covering the entire surface area in FESEM image. Optical properties of the CdSe thin films for a different number of immersion cycles were studied, which indicates that the absorbance increases with the increase in the immersion cycles. Furthermore, the optical band-gap in conjunction with the electrical resistivity was found to get decreased with increase in the immersion cycles. A good correlation between the number of immersion cycles and the physical properties indicates a simple method to manipulate the CdSe material properties for optoelectronic applications.

Chemical bath deposition of Hg doped CdSe thin films and their characterization

International Nuclear Information System (INIS)

Bhuse, V.M.

2005-01-01

The deliberate addition of Hg in CdSe thin film have been carried out using a simple, modified, chemical bath deposition technique with the objective to study the effect of Hg doping on properties of CdSe thin films. Synthesis was initiated at 278 K temperature using complexed cadmium sulphate, mercuric nitrate and sodium selenosulphate in an aqueous ammonical medium at pH 10. Films were characterized by XRD, SEM, optical absorption, electrical and thermoelectric techniques. The 'as deposited' films were uniform, well adherent, nearly stoichiometric and polycrystalline in a single cubic phase (zinc blende). Crystallite size determined from XRD and SEM was found to increase slightly with addition of Hg. The optical band gap of CdSe remains constant upto 0.05 mol% Hg doping, while it decreases monotonically with further increase in mercury content. Dark dc electrical resistivity and conduction activation energy of CdSe were found to decrease initially upto 0.05 mol% of Hg, thereafter increased for higher values of Hg but remains less than those of CdSe. All the films showed n-type of conductivity. A CdSe film containing 0.05 mol% of Hg showed higher absorption coefficient, and conductivity

Mobility activation in thermally deposited CdSe thin films

Indian Academy of Sciences (India)

Administrator

3. Mobility activation in CdSe thin films. The trap depths were calculated by using the following simple decay law. It = Ioexp(–pt),. (1) where p is the probability of escape of an electron from the trap per second and is given by (Randall and Wilkins 1945) p = S exp (–E/kT),. (2) where E is the trap depth for electrons below the ...

A comparative study of CdS thin films deposited by different techniques

Energy Technology Data Exchange (ETDEWEB)

Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

2013-05-01

Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

Effect of composition on SILAR deposited CdxZn1-xS thin films

Science.gov (United States)

Ashith V., K.; Gowrish Rao, K.

2018-04-01

In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

Optical properties of Cd Se thin films obtained by pyrolytic dew

International Nuclear Information System (INIS)

Perez G, A.M.; Tepantlan, C.S.; Renero C, F.

2006-01-01

In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na 2 SSeO 3 ) and Cadmium Chloride (CdC 12 ) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

Effect of annealing time on optical and electrical properties of CdS thin films

Science.gov (United States)

Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

2018-05-01

Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films

International Nuclear Information System (INIS)

Moutinho, H.R.; Al-Jassim, M.M.; Levi, D.H.; Dippo, P.C.; Kazmerski, L.L.

1998-01-01

The effects of CdCl 2 processing on the physical and electro-optical properties of CdTe were evaluated for thin films produced by physical vapor deposition and close-spaced sublimation (CSS). Two substrates (CdS and Indium - tin - oxide) were used with the physical vapor deposition (PVD) films specifically to isolate the effects of the Cd(S x Te 1-x ) alloy formed during the treatment of films deposited on CdS. The samples were analyzed by x-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. The observed changes in microstructure were caused by recrystallization, which consisted of the nucleation and development of a new CdTe structure and subsequent grain growth. Nevertheless, for these processes to take place, it was necessary that enough lattice-strain energy was available in the films. For this reason, PVD films did recrystallize, while CSS films did not. For the first time, recrystallization was observed directly in AFM images of CdTe films and confirmed by XRD analysis, which indicated the existence of two lattice parameters in PVD samples treated at 350 degree C. For samples treated at 400 degree C, the CdCl 2 treatment improved the minority-carrier lifetime of the films by more than one order of magnitude. This improvement was attributed to the elimination of deep defect levels within the band gap of the CdTe films as a result of the treatment. The sulfur diffusion into CdTe films deposited on CdS, during the CdCl 2 treatment at 400 degree C, strongly affected the defect structure

Supply risks associated with CdTe and CIGS thin-film photovoltaics

International Nuclear Information System (INIS)

Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

2016-01-01

Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn_xGa_1_−_xSe_2) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Ragini Raj, E-mail: raginirajsingh@gmail.com [Department of Physics, Bhopal University, Bhopal-462026 (India); Department of Physical Electronics, Iby and Aladar Fleishman Faculty of Engineering, Tel-Aviv University, Tel-Aviv-69978 (Israel); Painuly, Diksha [Centre for Nanoscience and Nanotechnology, University of Kerala, Thiruanantpuram, Kerala (India); Pandey, R.K. [Department of Physics, Bhopal University, Bhopal-462026 (India)

2009-07-15

Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 {+-} 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

MOCVD growth of transparent conducting Cd2SnO4 thin films

International Nuclear Information System (INIS)

Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

2004-01-01

The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films

Energy Technology Data Exchange (ETDEWEB)

Akaltun, Yunus [Department of Electrical and Electronic, Engineering Faculty, Erzincan University, Erzincan (Turkey); Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr [Department of Physics, Science and Art Faculty, Erzincan University, Erzincan (Turkey); Ateş, Aytunç [Department of Material Engineering, Engineering and Natural Sciences Faculty, Yıldırım Beyazıt University, Ankara (Turkey); Yıldırım, Muhammet [Department of Physics, Science Faculty, Atatürk University, Erzurum (Turkey)

2012-11-15

Highlights: ► Cd{sub 1−x}Zn{sub x}Se thin films were deposited using SILAR method. ► The electron effective mass, refractive index, dielectric constant values were calculated by using the energy bandgap values as a function of the zinc concentration (x). ► The resistivity and activation energy changed as a function of the zinc concentration (x). -- Abstract: Cd{sub 1−x}Zn{sub x}Se thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m{sub e}*/m{sub o}), refractive index (n), optical static and high frequency dielectric constants (ε{sub o}, ε{sub ∞}) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10{sup 5} and 10{sup 7} Ω cm with increasing zinc concentration at room temperature.

Photosensitive space charge limited current in screen printed CdTe thin films

Science.gov (United States)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

Energy Technology Data Exchange (ETDEWEB)

Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

2005-01-31

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

Growth of highly transparent Cd{sub x}Zn{sub 1−x}O (CZO) thin films: Structural and optical studies

Energy Technology Data Exchange (ETDEWEB)

Gautam, Naina, E-mail: nainagtm@gmail.com [Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India); Singh, Fouran, E-mail: fouran@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gautam, Subodh K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Singh, R.G. [Department of Physics, Bhagini Nivedita College, Delhi University, Delhi 110043 (India); Ojha, S. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kapoor, A. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India)

2015-11-25

The deposition of Cd{sub x}Zn{sub 1−x}O thin films with different cadmium concentrations i.e., x = 0.0, 0.05, 0.20 by sol–gel spin coating is reported. The doping fraction of Cd in ZnO films was measured by Rutherford backscattering spectrometry (RBS), while the surface morphology was studied by scanning electron microscopy (SEM). Grazing incidence X-ray diffraction (GIXRD) study was carried out for the structural investigations and reveals hexagonal wurtzite structure with polycrystalline nature. The various structural parameters are calculated including the lattice constants ‘a’ and ‘c’, stress (σ), strain (ε) and internal parameter (u). For x = 0.20 Cd content, the formation of secondary phase of the cubic CdO at 33.12° (111) and 38.41° (200) is observed and this is further confirmed by micro-Raman studies, where the TO mode emerges at ∼261.5 cm{sup −1}. The basic wurtzite structure is maintained as ‘c/a’ ratio and internal parameter ‘u’ found to be closer to the ideal values. All the films are found to be highly transparent in the visible region and a bending of the near band edge (NBE) absorption is observed with Cd doping. It is further confirmed by calculating the Urbach energy (E{sub u}), which is found to be increased from 0.14 eV (for x = 0.0) to 0.26 eV (for x = 0.20) with maximum value for the lightly doped films i.e. x = 0.05. However, the optical band gap is found to decrease from 3.26 eV (for x = 0.0) to 3.08 eV (for x = 0.20). - Highlights: • High transparent Cd{sub x}Zn{sub 1−x}O (CZO) thin films with an average transparency of ∼85% in the visible region. • Band-gap tuning is achieved by Cd doping in ZnO. • Segregation of cubic rock-salt CdO phase upon high doping as confirmed by Micro-Raman and SEM investigations.

Defect characterization of CdTe thin films using a slow positron beam

International Nuclear Information System (INIS)

Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

2007-01-01

Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Chemical bath deposition of CdS thin films doped with Zn and Cu

Indian Academy of Sciences (India)

Abstract. Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ... Cadmium sulfide; chemical bath deposition; doping; optical window. 1. ..... at low temperature (10 K), finding similar trends than.

Study of the Mg incorporation in CdTe for developing wide band gap Cd{sub 1-x}Mg{sub x}Te thin films for possible use as top-cell absorber in a tandem solar cell

Energy Technology Data Exchange (ETDEWEB)

Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

Science.gov (United States)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

International Nuclear Information System (INIS)

Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

2011-01-01

Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

Science.gov (United States)

Ali, H. M.; Abd El-Ghanny, H. A.

2008-04-01

Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

Energy Technology Data Exchange (ETDEWEB)

Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

2016-05-06

Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

International Nuclear Information System (INIS)

Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

2016-01-01

Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

International Nuclear Information System (INIS)

Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

2006-01-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 μm, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10 3 cm -1 because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several growth

Solution precursor plasma deposition of nanostructured CdS thin films

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2012-01-01

Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

Solution precursor plasma deposition of nanostructured CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

Mobility activation in thermally deposited CdSe thin films

Indian Academy of Sciences (India)

Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the ...

An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

International Nuclear Information System (INIS)

Chu Juan; Jin Zhengguo; Cai Shu; Yang Jingxia; Hong Zhanglian

2012-01-01

Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV–Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm–19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Alaa Ayad Al-mebir

2016-01-01

Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

Defects in CdSe thin films, induced by high energy electron irradiation

International Nuclear Information System (INIS)

Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

2004-01-01

Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

Properties of pulsed electrodeposited CdIn2S4 thin film

International Nuclear Information System (INIS)

Hankare, P.P.; Kokate, A.V.; Asabe, M.R.; Delekar, S.D.; Chougule, B.K.

2006-01-01

CdIn 2 S 4 thin films are prepared by pulsed electrodeposition technique over F:SnO 2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO 4 , InCl 3 and Na 2 S 2 O 3 . The growth kinetics of the film was studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current, and pH of the electrolyte bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films showed the presence of polycrystalline nature. Energy dispersive analysis (EDAX) spectrum of the surface composition confirms the nearly stoichiometric CdIn 2 S 4 nature of the film. Surface morphology studies by scanning electron microscope (SEM) shows that, the deposited films are well adherent and grains are uniformly distributed over the surface of substrate. The optical transmission spectra show a direct band gap value of 2.16 eV

Alloy formation during the electrochemical growth of a Ag-Cd ultrathin film on Au(1 1 1)

International Nuclear Information System (INIS)

Barrio, M.C. del; Garcia, S.G.; Salinas, D.R.

2009-01-01

The electrodeposition of a Ag/Cd ultrathin film on a Au(1 1 1) surface and the formation of a surface alloy during this process have been studied using classical electrochemical techniques and in situ Scanning Tunneling Microscopy (STM). The films were obtained from separate electrolytes containing Ag + or Cd 2+ ions and from a multicomponent solution containing both ions. First, the polarization conditions were adjusted in order to form a Ag film by overpotential deposition. Afterwards, a Cd monolayer was formed onto this Au(1 1 1)/Ag modified surface by underpotential deposition. The voltammetric behavior of the Cd UPD and the in situ STM images indicated that the ultrathin Ag films were uniformly deposited and epitaxially oriented with respect to the Au(1 1 1) surface. Long time polarization experiments showed that a significant Ag-Cd surface alloying accompanied the formation of the Cd monolayer on the Au(1 1 1)/Ag modified surface, independent of the Ag film thickness. In the case of an extremely thin Ag layer (1 Ag ML) the STM images and long time polarization experiments revealed a solid state diffusion process of Cd, Ag, and Au atoms which can be responsible for the formation of different Ag-Cd or Au-Ag-Cd alloy phases.

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

Science.gov (United States)

Arya, Sandeep; Sharma, Asha; Singh, Bikram; Riyas, Mohammad; Bandhoria, Pankaj; Aatif, Mohammad; Gupta, Vinay

2018-05-01

Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (-1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

2013-06-20

Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

Energy Technology Data Exchange (ETDEWEB)

Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

2006-07-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Purohit, Anuradha; Chander, S.; Patel, S.L. [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India); Rangra, K.J. [Sensors and Transducers Group, CSIR-CEERI, Pilani-333031 (India); Dhaka, M.S., E-mail: msdhaka75@yahoo.co.in [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India)

2017-06-15

Highlights: • Substrate dependent physical properties of CdO thin films are carried out. • XRD patterns reveal that the films have cubic structure of space group Fm3m. • Optical direct band gap is found to vary with the substrates. • SEM images show that the films are compact and homogeneous. • I–V characteristics show ohmic behavior of the deposited CdO films. - Abstract: In this study, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and silicon (Si) wafer. The deposited films were analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer, scanning electron microscopy, energy dispersive spectroscopy (EDS) and source meter (current–voltage) for structural, optical, surface morphological, elemental and electrical analysis, respectively. The films have single phase of cubic structure (space group Fm3m) with (200) preferred orientation. The structural parameters viz. inter-planar spacing, grain size, lattice constant, internal strain and dislocation density are calculated and found to vary with the nature of the substrates. The optical band gap was found in the range 2.24–3.95 eV and strongly dependents on the substrates. The SEM analysis shows that the films are compact, homogeneous and have granular structure without any defects like pin holes and cracks. The EDS spectra confirmed the presence of cadmium (Cd) and oxygen (O) in the films deposited on different substrates. The current–voltage characteristics of the films show ohmic behavior.

Cd{sub 1−x}Zn{sub x}S thin films with low Zn content obtained by an ammonia-free chemical bath deposition process

Energy Technology Data Exchange (ETDEWEB)

Carreón-Moncada, I. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); González, L.A., E-mail: luis.gonzalez@cinvestav.edu.mx [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); Pech-Canul, M.I. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); Ramírez-Bon, R. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apartado Postal 1-798, CP. 76001 Querétaro, Qro., México (Mexico)

2013-12-02

Cd{sub 1−x}Zn{sub x}S films with low Zn content were obtained on glass substrates by an ammonia-free chemical bath deposition process. Alkaline reaction solutions were prepared using cadmium chloride, zinc chloride, sodium citrate, thiourea and potassium hydroxide. As a result of varying the mixture ratio between Cd and Zn precursors, microstructural studies from X-ray diffraction reveal that the resulting films have hexagonal, wurzite type, crystalline structure with changes in the preferential growth orientation. Important changes on the surface morphology and thickness of the Cd{sub 1−x}Zn{sub x}S films were also observed as effects of adding Zn to the CdS lattice. Optical studies show that Cd{sub 1−x}Zn{sub x}S thin films with energy band gaps in the range from 2.48 to 2.65 eV were obtained. - Highlights: • Cd{sub 1−x}Zn{sub x}S layers were grown on glass by ammonia-free chemical bath deposition • Films with low Zn content were obtained using reaction solutions with pH11.5 • Zn addition produced changes on the orientation growth and morphology of the films • Cd{sub 1−x}Zn{sub x}S films have energy band gap values from 2.48 to 2.65 eV.

Improving the optical and crystalline properties on CdS thin films growth on small and large area by using CBD technique

Energy Technology Data Exchange (ETDEWEB)

Albor A, M. L.; Flores M, J. M.; Hernandez V, C.; Contreras P, G.; Mejia G, C.; Rueda M, G. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Unidad Profesional Adolfo Lopez Mateos, Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Departamento de Formacion Basica, Unidad Profesional Adolfo Lopez Mateos, 07738 Ciudad de Mexico (Mexico)

2016-11-01

CdS polycrystalline thin films have been used as window layer in solar cells; the optical and crystalline quality of the CdS-partner plays and important role in the photovoltaic device performance. CdS thin films were deposited by using Chemical Bath Deposition. The SnO{sub 2}:F substrates used were chemically treated with HCl (0.1 M) and others were thermally annealed in different atmospheres (Ar and O{sub 2}). The physical properties of CdS thin films were influenced by the HCl treatment, position, size and the substrates movement inside the reaction beaker. The CdS samples were deposited in areas of 4 cm{sup 2}, 50 cm{sup 2} and 100 cm{sup 2}. Finally CdS thin films with thickness of 35-300 nm with good optical and crystalline quality on a uniform morphology were obtained. Transmittance values were obtained for all samples about 85-90 % with an average of gap energy of 2.5 eV. The structural characteristics of the samples were determined by the X-ray diffraction patterns, by means of a D-500 Siemens X-ray system. (Author)

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Science.gov (United States)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Photoluminescent enhancement of CdSe/Cd(1-x) Zn(x)S quantum dots by hexadecylamine at room temperature.

Science.gov (United States)

Yang, Jie; Yang, Ping

2012-09-01

CdSe/Cd(1-x) Zn(x)S core/shell quantum dots (QDs) were fabricated in 1-octadecene via a two step synthesis. CdSe cores were first prepared using CdO, trioctylphosphine (TOP) selenium, and stearic acid. Subsquently, a Cd(1-x) Zn(x)S shell coating was carried out using zinc acetate dihydrate, cadmium acetate dihydrate, TOPS, and hexadecylamine (HDA) starting materials in the friendly organic system under relatively low temperature. The absorption and photoluminescence (PL) spectra have a significant red shift after the coverage of Cd(1-x)Zn(x)S shell on CdSe cores. The X-ray diffraction analysis of samples confirmed the formation of core/shell structure. The PL quantum yields (QYs) of CdSe/Cd(1-x)Zn(x)S QDs were improved gradually with time at room temperature. This is ascribed to the surface passivation of HDA to the QDs during store. This phenomenon was confirmed by the Fourier transform infrared spectrum of samples. Namely, HDA does not capped on the surface of as-prepared QDs, in which a low PL QYs was observed (less than 10%). Being storing for certain time, HDA attached to the surface of the QDs, in which the PL QYs increased (up to 31%) and the full width at half maximum of PL spectra decreased. Moreover, the fluorescence decay curve of the core/shell QDs is closer to a biexponential decay profile and has a longer average PL lifetime. The variation of average PL lifetime also indicated the influence of HDA during store.

Structural phase change and optical band gap bowing in hot wall deposited CdSe{sub x}Te{sub 1-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore, Tamilnadu (India); Jayakumar, S.; Kannan, M.D.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore, Tamilnadu (India)

2009-04-15

CdSe{sub x}Te{sub 1-x} thin films of different compositions have been deposited on glass substrates by hot wall deposition method under conditions very close to thermodynamical equilibrium with minimum loss of material. The structural studies carried out on the deposited films revealed that they are crystalline in nature and exhibit either cubic zinc blende or hexagonal phase or both depending on the composition of the material. The lattice parameter values for both cubic and hexagonal phases have been determined and are observed to vary with composition according to Vegard's law. The optical properties of the deposited CdSe{sub x}Te{sub 1-x} thin films have been studied using transmittance spectra. The spectra shows a sharp fall in transmittance at wavelength corresponding to the band gap of the material. The optical band gap has been determined and found to be direct allowed. The band gap has been observed to strongly depend on film composition. The variation of band gap with composition has been observed to be quadratic in nature exhibiting a bowing behaviour. (author)

Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

Science.gov (United States)

Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

2006-04-01

Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

Directory of Open Access Journals (Sweden)

Zhouling Wang

2014-01-01

Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

Directory of Open Access Journals (Sweden)

Claudio Davet Gutiérrez-Lazos

2014-06-01

Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

Photoelectric properties of thin films from the CdS-Ag2 S system

International Nuclear Information System (INIS)

Ristova-Lipanovikj, Mimoza

1996-01-01

Three different methods for preparation of thin films of CdS-Ag 2 S system are presented. Those methods are modified from the already existing methods of chemical deposition, and the method of spray pyrolysis, both widely utilized for preparation of wide range of binary, ternary and quaternary semiconductor thin films. The atomic absorption method was applied for quantitative analysis of the samples. The crystal structure of the thin films was studied by X-ray diffraction, while their morphology and the texture was analyzed from the microphotographs, taken on the samples by an optical microscope, in transmitted light. An extensive research was undertaken, to improve the crystallinity of the samples, by performing a post preparation thermal treatment. Photoelectric as well as some other physical properties were studied. VIS and NIR transmission spectra were recorded. The optical band gaps for various thin films containing different portions of Ag and Cd in the system, were evaluated. Spectral dependence of the photoconductivity was recorded. The optical band gaps were determined from the positions of the corresponding maxima of the photoconductivity. From the curves of the time relaxation of the photoconductivity, the carrier life times were calculates. Measurements of the thermal dependence of the resistivity on various samples were performed. Based on the extensive experimental research, the most convenient composition for PV application was selected. For the sake of comparison, two different types of PV cells were manufactured, Sn O 2 :F/CdS:Ag-Sn x S, and Sn O 2 :F/CdS-Sn x S, in order to study the influence of the silver content in the CdS. The plots of I-V and C-V characteristics are presented, and the parameters of the solar cells, were determined and taken in a relation with the content of the silver on the CdS. Finally, some directions of a possible future experimental and theoretical research in this field are given, based on the conclusions made. (author)

C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

Directory of Open Access Journals (Sweden)

A. Gonzalez-Cisneros

2013-01-01

Full Text Available In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010. The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film and the close-spaced vapor transport (for CdTe film techniques.

Flexible pressure sensor based on graphene aerogel microstructures functionalized with CdS nanocrystalline thin film

Science.gov (United States)

Plesco, Irina; Dragoman, Mircea; Strobel, Julian; Ghimpu, Lidia; Schütt, Fabian; Dinescu, Adrian; Ursaki, Veaceslav; Kienle, Lorenz; Adelung, Rainer; Tiginyanu, Ion

2018-05-01

In this paper, we report on functionalization of graphene aerogel with a CdS thin film deposited by magnetron sputtering and on the development of flexible pressure sensors based on ultra-lightweight CdS-aerogel nanocomposite. Analysis by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray analysis disclose the uniform deposition of nanocrystalline CdS films with quasi-stoichiometric composition. The piezoresistive response of the aforementioned nanocomposite in the pressure range from 1 to 5 atm is found to be more than one order of magnitude higher than that inherent to suspended graphene membranes, leading to an average sensitivity as high as 3.2 × 10-4 kPa-1.

Dense CdS thin films on fluorine-doped tin oxide coated glass by high-rate microreactor-assisted solution deposition

Energy Technology Data Exchange (ETDEWEB)

Su, Yu-Wei, E-mail: suyuweiwayne@gmail.com [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ramprasad, Sudhir [Energy Processes and Materials Division, Pacific Northwest National Laboratory, Corvallis, OR 9730 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Han, Seung-Yeol; Wang, Wei [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Ryu, Si-Ok [School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeonsan, Gyeongbuk 712-749 (Korea, Republic of); Palo, Daniel R. [Barr Engineering Co., Hibbing, MN 55747 (United States); Paul, Brian K. [School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States); Chang, Chih-hung [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97330 (United States); Microproducts Breakthrough Institute and Oregon Process Innovation Center, Corvallis, Oregon 97330 (United States)

2013-04-01

Continuous microreactor-assisted solution deposition is demonstrated for the deposition of CdS thin films on fluorine-doped tin oxide (FTO) coated glass. The continuous flow system consists of a microscale T-junction micromixer with the co-axial water circulation heat exchanger to control the reacting chemical flux and optimize the heterogeneous surface reaction. Dense, high quality nanocrystallite CdS thin films were deposited at an average rate of 25.2 nm/min, which is significantly higher than the reported growth rate from typical batch chemical bath deposition process. Focused-ion-beam was used for transmission electron microscopy specimen preparation to characterize the interfacial microstructure of CdS and FTO layers. The band gap was determined at 2.44 eV by UV–vis absorption spectroscopy. X-ray photon spectroscopy shows the binding energies of Cd 3d{sub 3/2}, Cd 3d{sub 5/2}, S 2P{sub 3/2} and S 2P{sub 1/2} at 411.7 eV, 404.8 eV, 162.1 eV and 163.4 eV, respectively. - Highlights: ► CdS films deposited using continuous microreactor-assisted solution deposition (MASD) ► Dense nanocrystallite CdS films can be reached at a rate of 25.2 [nm/min]. ► MASD can approach higher film growth rate than conventional chemical bath deposition.

Spin-coating deposition of PbS and CdS thin films for solar cell application

Energy Technology Data Exchange (ETDEWEB)

Patel, Jayesh; Mighri, Frej [Laval University, CREPEC, Department of Chemical Engineering, Quebec, QC (Canada); Ajji, Abdellah [Ecole Polytechnique, CREPEC, Chemical Engineering Department, Montreal, QC (Canada); Tiwari, Devendra; Chaudhuri, Tapas K. [Charotar University of Science and Technology (CHARUSAT), Dr. K.C. Patel Research and Development Centre, Anand District, Gujarat (India)

2014-12-15

In this work, we describe a simple spin-coating deposition technique for lead sulphide (PbS) and cadmium sulphide (CdS) films from a methanolic metal-thiourea complex. The characterization of the films by X-ray diffraction and X-ray photoelectron spectroscopy techniques revealed that pure cubic phase PbS and CdS layers were formed via this method. As shown by atomic force microscopy and scanning electron microscopy results, both films were homogeneous and presented a smooth surface. Optical properties showed that the energy band gap of PbS and CdS films were around 1.65 and 2.5 eV, respectively. The PbS film is p-type in nature with an electrical conductivity of around 0.8 S/cm. The hole concentration and mobility were 2.35 x 10{sup 18} cm{sup -3} and 2.16 x 10{sup -3} cm{sup 2}/V/s, respectively, as determined from Hall measurement. Both films were used to develop a thin film solar cell device of graphite/PbS/CdS/ITO/glass. Device characterization showed the power conversion efficiency of around 0.24 %. The corresponding open circuit voltage, short circuit current and fill factor were 0.570 V, 1.32 mA/cm{sup 2} and 0.32, respectively. (orig.)

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Directory of Open Access Journals (Sweden)

Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

2008-01-01

Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

Studies on Cd1Se0.6Te0.4 Thin Films by Spectroscopic and Diffractometer Characterization

Directory of Open Access Journals (Sweden)

Cliff Orori Mosiori

2017-09-01

Full Text Available Cadmium selenide tellurium is a compound containing cadmium, tellurium and selenium elements forming a combined solid. Hall measurements suggest that it is an n-type semiconductor. Related optical studies indicate that is transparent to infra-red radiation. Structural studies clearly show that it has a wurtzite, sphalerite crystalline forms. Cadmium is a toxic heavy metal, and selenium is only toxic in large amounts or doses. By this toxicity, cadmium selenide is a known to be carcinogen to humans; however, this does not stop investigating it for optoelectronic applications. Current research has narrowed down to investigating cadmium selenide when in the form of nanoparticles. Cadmium selenide finds applications has found applications in opto-electronic devices like laser diodes, biomedical imaging, nano-sensing, high-efficiency solar cells and thin-film transistors. By chemical bath deposition, Cd1Se0.6Te0.4 thin films were grown onto glass. Tellurium was gradually introduced as an impurity and its crystalline structure and optical properties were investigated by XRD and UV-VIS spectroscopy. The main Cd1Se0.6Te0.4/glass characteristics were correlated with the conditions of growing and post-growth treatment and it was found out that films were homogeneous films with controllable thickness onto the glass substrate and suitable for n-type “sandwich” heterostructures applications. Comparison of the intensities of equivalent reflexions provided a test for the internal consistency of the measurements. Equivalent reflexions in two specimens differed on average by 1.4 % and 0.6% from the mean measured intensity, attesting to the high internal consistency of measurements from extended-face crystals. By comparison from data obtained from all samples showed their average deviation from the mean to be 0.9 %.

Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

Energy Technology Data Exchange (ETDEWEB)

Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

2009-05-01

Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

Uniform Thin Films of CdSe and CdSe(ZnS) Core(shell) Quantum Dots by Sol-Gel Assembly: Enabling Photoelectrochemical Characterization and Electronic Applications

Science.gov (United States)

Korala, Lasantha; Wang, Zhijie; Liu, Yi; Maldonado, Stephen; Brock, Stephanie L.

2013-01-01

Optoelectronic properties of quantum dot (QD) films are limited by (1) poor interfacial chemistry and (2) non-radiative recombination due to surface traps. To address these performance issues, sol-gel methods are applied to fabricate thin films of CdSe and core(shell) CdSe(ZnS) QDs. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with chemical analysis confirms that the surface of the QDs in the sol-gel thin films are chalcogen-rich, consistent with an oxidative-induced gelation mechanism in which connectivity is achieved by formation of dichalcogenide covalent linkages between particles. The ligand removal and assembly process is probed by thermogravimetric, spectroscopic and microscopic studies. Further enhancement of inter-particle coupling via mild thermal annealing, which removes residual ligands and reinforces QD connectivity, results in QD sol-gel thin films with superior charge transport properties, as shown by a dramatic enhancement of electrochemical photocurrent under white light illumination relative to thin films composed of ligand-capped QDs. A more than 2-fold enhancement in photocurrent, and a further increase in photovoltage can be achieved by passivation of surface defects via overcoating with a thin ZnS shell. The ability to tune interfacial and surface characteristics for the optimization of photophysical properties suggests that the sol-gel approach may enable formation of QD thin films suitable for a range of optoelectronic applications. PMID:23350924

Improvements in CdTe- and CIGS-based thin-film solar cells and investigation on new materials for photovoltaic applications.

OpenAIRE

Rosa, Greta

2018-01-01

Currently, thin-film solar cells are one of the most promising technologies for low-cost renewable energy production. CdTe- and CuInGaSe2-based cells, which achieved record efficiencies of 22.1% and 22.6% respectively, are the most attractive among thin-film solar cells. These high efficiencies have had a huge influence in making them highly competitive in the photovoltaic market, with an estimated final cost per module lower than US $ 0.50 per peak-watt. At the Thin Film Laboratory of the...

Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Development and studies of Cd_1_−_xMg_xTe thin films with varying band gaps to understand the Mg incorporation and the related material properties

International Nuclear Information System (INIS)

Palomera, Roger C.; Martínez, Omar S.; Pantoja-Enriquez, J.; Mathews, N.R.; Reyes-Banda, Martín G.; Krishnan, B.; Mathew, X.

2017-01-01

Highlights: • Cd_1_−_xMg_xTe films with band gap in the range 1.47–2.41 eV is obtained. • Cd substitution by Mg was confirmed with SIMS and XPS analysis. • Cd_1_−_xMg_xTe films maintained CdTe structural features but with higher band gap. • Mg incorporation in CdTe inhibited grain growth. - Abstract: In this paper we report a systematic work involving the development of Cd_1_−_xMg_xTe thin films by co-evaporation of CdTe and Mg. The evaporation rate of both materials were adjusted to obtain ternary films of varying stoichiometry and hence the band gap. We have deposited films with band gap ranging from 1.47 to 2.41 eV. The films were characterized for structural, morphological, optical, opto-electronic, and spectroscopic properties. The film stoichiometry was studied across the thickness using SIMS data. SEM images showed that the grain size has a dependence on Mg content in the film, which inhibits the grain growth. The structural parameters showed a systematic dependence on Mg content in the film, however, there was no noticeable change in the XRD reflections with respect that of pure CdTe for lower concentrations of Mg. XPS analysis shed light on the incorporation of Mg further supporting the band gap variations observed with the UV–Vis spectroscopic studies. The photoresponse of the film was affected by Mg incorporation. Prototype devices of the type Cd_1_−_XMg_xTe/CdS were fabricated and the results are discussed.

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

International Nuclear Information System (INIS)

Laatar, F.; Harizi, A.; Smida, A.; Hassen, M.; Ezzaouia, H.

2016-01-01

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E_o), dispersion energy (E_d), and static refractive index (n_o) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ_e) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Co+ -ion implantation induced doping of nanocrystalline CdS thin films: structural, optical, and vibrational properties

International Nuclear Information System (INIS)

Chandramohan, S.; Sarangi, S.N.; Majumder, S.; Som, T.; Kanjilal, A.; Sathyamoorthy, R.

2009-01-01

Full text: Transition metal (Mn, Fe, Co and Ni) doped CdS nanostructures and nanocrystalline thin films have attracted much attention due to their anticipated applications in magneto-optical, non-volatile memory and future spintronics devices. Introduction of impurities in substitutional positions is highly desirable for such applications. Ion implantation is known to provide many advantages over conventional methods for efficient doping and possibility of its seamless integration with device processing steps. It is not governed by equilibrium thermodynamics and offers the advantages of high spatial selectivity and to overcome the solubility limits. In this communication, we report on modifications of structural morphological, optical, and vibrational properties of 90 keV Co + -ion implanted CdS thin films grown by thermal evaporation. Co + -ion implantation was performed in the fluence range of 0.1-3.6x10 16 ions cm -2 These fluences correspond to Co concentration in the range of 0.34-10.8 at % at the peak position of profile. Implantation was done at an elevated temperature of 573 K in order to avoid amorphization and to enhance the solubility of Co ions in the CdS lattice. Films were characterized by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), optical absorption, and micro-Raman spectroscopy. Implantation does not lead to any secondary phase formation either in the form of impurity or the metallic clusters. However, implantation improves the crystalline quality of the samples and leads to supersaturation of Co ions in the CdS lattice. Thus, nanocrystalline CdS thin films can be considered as a good radiation- resistant material, which can be employed for prolonged use in solar cells for space applications. The optical band gap is found to decrease systematically with increasing ion fluence from 2.39 to 2.28 eV. Implantation leads to agglomeration of grains and a systematic increase in the surface roughness. Both GAXRD and micro

Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method

International Nuclear Information System (INIS)

Murthy, L.C.S.; Rao, K.S.R.K.

1999-01-01

A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200-600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1.56-5.72x10 -3 Ω-cm, 128-189 Ω/□, 1.6-3.9x10 21 cm -3 and 0.3-3 cm 2 /Vs, respectively for varying film thickness. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2.20-2.42 eV. These films have transmittance around 77% and average reflectance is below 2.6% in the spectral range 350-850 nm. The films are n-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K. (author)

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

International Nuclear Information System (INIS)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit

2017-01-01

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm"2 is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit [Sardar Vallabhbhai National Institute of Technology, Chemical Engineering Department, Surat, Gujarat (India)

2017-08-15

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm{sup 2} is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

International Nuclear Information System (INIS)

Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

2007-01-01

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Effect of deposition temperature on the structural and optical properties of CdSe QDs thin films deposited by CBD method

Energy Technology Data Exchange (ETDEWEB)

Laatar, F., E-mail: fakher8laatar@gmail.com [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Harizi, A. [Photovoltaic and Semiconductor Materials Laboratory, Engineering Industrial Department, ENIT, Tunis El Manar University, BP 37, Le Belvédère, 1002 Tunis (Tunisia); Smida, A. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-06-15

Highlights: • Synthesis of CdSe QDs with L-Cysteine capping agent for applications in nanodevices. • The films of CdSe QDs present uniform and good dispersive particles at the surface. • Effect of bath temperature on the structural and optical properties of CdSe QDs thin films. • Investigation of the optical constants and dispersion parameters of CdSe QDs thin films. - Abstract: Cadmium selenide quantum dots (CdSe QDs) thin films were deposited onto glass substrates by a chemical bath deposition (CBD) method at different temperatures from an aqueous solution containing L-Cysteine (L-Cys) as capping agent. The evolution of the surface morphology and elemental composition of the CdSe films were studied by AFM, SEM, and EDX analyses. Structural and optical properties of CdSe thin films were investigated by XRD, UV–vis and PL spectroscopy. The dispersion behavior of the refractive index is described using the single oscillator Wemple-DiDomenico (W-D) model, and the physical dispersion parameters are calculated as a function of deposition temperature. The dispersive optical parameters such as average oscillator energy (E{sub o}), dispersion energy (E{sub d}), and static refractive index (n{sub o}) were found to vary with the deposition temperature. Besides, the electrical free carrier susceptibility (χ{sub e}) and the carrier concentration of the effective mass ratio (N/m*) were evaluated according to the Spitzer-Fan model.

Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

Energy Technology Data Exchange (ETDEWEB)

Ehsan, Muhammad Ali [Nanotechnology and Catalysis Centre (NANOCAT), University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Khaledi, Hamid [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Pandikumar, Alagarsamy; Huang, Nay Ming [Department of Physics, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Arifin, Zainudin [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Department of Chemistry, Faculty of Science, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

2015-10-15

A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

Science.gov (United States)

Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

2014-09-02

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

Characterisation of nanocrystalline CdS thin films deposited by CBD

International Nuclear Information System (INIS)

Devi, R.; Sarma, B.K.

2006-01-01

Nanocrystalline thin films of CdS are deposited on glass substrates by chemical bath deposition using polyvinyl alcohol (PVA) matrix solution. Crystallite sizes of the films are determined from X-ray diffraction and are found to vary from 5.4 nm to 7 nm. The band gaps of the nanocrystalline material is determined from the U-V spectrograph and are found to be within the range from 2.6 eV to 2.8 eV as grain size decreases. The band gaps are also determined from the dependence of electrical conductivity of the films with temperature. An increase of molarity decreases the grain size which in turn increases the band gap. (author)

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata, E-mail: neillohit@yahoo.co.in

2014-11-30

Graphical abstract: - Highlights: • CdS film grown on indium coated glass substrates via CBD and subsequent annealing. • Disappearance of the indium (1 1 2) peak confirms interdiffusion at 300 °C. • SIMS indicates the subsequent interdiffusion at progressively higher temperature. • Composite In–CdS layer showed lower photosensitivity compared to pure CdS. - Abstract: In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

Observation of long phase-coherence length in epitaxial La-doped CdO thin films

Science.gov (United States)

Yun, Yu; Ma, Yang; Tao, Songsheng; Xing, Wenyu; Chen, Yangyang; Su, Tang; Yuan, Wei; Wei, Jian; Lin, Xi; Niu, Qian; Xie, X. C.; Han, Wei

2017-12-01

The search for long electron phase-coherence length, which is the length that an electron can keep its quantum wavelike properties, has attracted considerable interest in the last several decades. Here, we report the long phase-coherence length of ˜3.7 μm in La-doped CdO thin films at 2 K. Systematical investigations of the La doping and the temperature dependences of the electron mobility and the electron phase-coherence length reveal contrasting scattering mechanisms for these two physical properties. Furthermore, these results show that the oxygen vacancies could be the dominant scatters in CdO thin films that break the electron phase coherence, which would shed light on further investigation of phase-coherence properties in oxide materials.

Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Directory of Open Access Journals (Sweden)

Manjula N.

2015-12-01

Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Science.gov (United States)

Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Energy Technology Data Exchange (ETDEWEB)

Novruzov, V.D. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Keskenler, E.F., E-mail: keskenler@gmail.com [Department of Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize (Turkey); Tomakin, M. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Kahraman, S. [Department of Physics, Mustafa Kemal University, Hatay (Turkey); Gorur, O. [Department of Physics, Abant Izzet Baysal University, Bolu (Turkey)

2013-09-01

Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu{sub 2}S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

KAUST Repository

Salas Villaseñor, Ana L.

2014-06-01

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

KAUST Repository

Salas Villaseñ or, Ana L.; Mejia, Israel I.; Sotelo-Lerma, Mé rida; Guo, Zaibing; Alshareef, Husam N.; Quevedo-Ló pez, Manuel Angel Quevedo

2014-01-01

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

Nanocrystalline CdS{sub 1−x}Se{sub x} alloys as thin films prepared by chemical bath deposition: Effect of x on the structural and optical properties

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: mhernandezp0606@ipn.mx [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Rangel-Salinas, E. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico)

2014-12-05

Highlights: • CdS1−xSe{sub x} films with tunable structural and optical properties were grown by CBD. • Thin films are composed by a solid solution of the CdS{sub 1−x}Se{sub x} ternary alloy. • Crystal size, band gap and photoluminescence signal, decrease with the composition. • Ternary alloys show hexagonal phase with preferential orientation on (0 0 2) plane. • Films with x ⩾ 0.5 show semi-spherical grains composed by nanoworms structures. - Abstract: CdS{sub 1−x}Se{sub x} thin films were deposited on Corning glass substrates at 75 °C by chemical bath deposition (CBD) varying the composition “x” from 0 to 1 at a constant deposition time of 120 min. The composition of the films was adjusted by modifying the concentration as well as the ratio of the precursors. The morphological, compositional, structural and optical properties of the films were analyzed using several techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), UV–Vis Spectroscopy (UV–Vis) and Photoluminescence (PL). The films grow as layers following the ion by ion mechanism, the density of the films decreases with x. Films are constituted by clusters (100–600 nm in diameter) of semispherical particles with sizes fluctuating from 10 to 20 nm. For x ⩾ 0.5 the particles are well-arranged in a “worm-like” structure. All the films are polycrystalline, to x = 0 (CdS) the cubic phase is present, the increase of composition promotes the formation of hexagonal phase or a mixture of both cubic and hexagonal phases. Preferential orientation in the (1 0 0) or (0 0 2) plane is observed. The crystal size decreases from 20 to 6 nm when x is increased. The optical properties can be easily tuned by adjusting the composition. Optical absorption analysis shows that the band gap (E{sub g}) value shifts to red in function of x (from 2.47 to 1.99 eV). Photoluminescence signal changes as “x” varies showing a regular behavior

Influence of Ag doping concentration on structural and optical properties of CdS thin film

International Nuclear Information System (INIS)

Kumar, Pragati; Saxena, Nupur; Gupta, Vinay; Agarwal, Avinash

2015-01-01

This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag 2 O or Ag 2 S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration

Influence of Ag doping concentration on structural and optical properties of CdS thin film

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India); Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Saxena, Nupur; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India)

2015-05-15

This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.

CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

Science.gov (United States)

Soylu, M.; Yazici, T.

2017-12-01

Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

International Nuclear Information System (INIS)

Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

2013-01-01

In the present manuscript we report about the preparation of CdS/CuInSe 2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au 9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au 9+ SHI of 5×10 11 and 5×10 12 ions/cm 2 fluencies and later on characterized for structural, compositional, morphological, optical and I–V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In 2 Se 3 , Cu 3 Se 2 and CuIn 2 Se 3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I–V characteristics under illumination to 100 mW/cm 2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation. - Highlights: • Nanostructured CdS/CuInSe 2 can be grown by chemical ion exchange method. • Physicochemical and optoelectronic properties can be modified by 120 MeV Au 9+ SHI Irradiation. • Solar energy conversion efficiency improved from 0.26 to 1.59% in CdS/CuInSe 2 upon irradiation

The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

2017-02-01

Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

2012-12-05

Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

Energy Technology Data Exchange (ETDEWEB)

Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

2013-10-05

Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

Study of sub band gap absorption of Sn doped CdSe thin films

International Nuclear Information System (INIS)

Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

2014-01-01

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

Study of sub band gap absorption of Sn doped CdSe thin films

Energy Technology Data Exchange (ETDEWEB)

Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

2014-04-24

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

Rate constant of free electrons and holes recombination in thin films CdSe

International Nuclear Information System (INIS)

Radychev, N.A.; Novikov, G.F.

2006-01-01

Destruction kinetics of electrons generated in thin films CdSe by laser impulse (wave length is 337 nm, period of impulse - 8 nc) is studied by the method of microwave photoconductivity (36 GHz) at 295 K. Model of the process was suggested using the analysis of kinetics of photo-responses decay, and it allowed determination of rate constant of recombination of free electrons and holes in cadmium selenide - (4-6)x10 -11 cm 3 s -1 [ru

Effect of thallium doping on the electrical and optical properties of CdO thin films

International Nuclear Information System (INIS)

Dakhel, A.A.

2008-01-01

A series of lightly Tl-doped CdO thin films (1%,1.5%,2%,2.5%, and 3%) have been prepared by a vacuum evaporation method on glass and Si wafer substrates. The prepared films were subjected to structural study by X-ray diffraction, optical characterisation by UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. Experimental data indicate that Tl 3+ doping slightly stretching stresses the CdO crystalline structure and changes the optical and electrical properties. It was observed that Tl doping widens the energy gap of CdO from 2.22 eV to 2.83 eV via a Burstein-Moss energy level shift. The band gap shrinkage was also observed for carrier concentrations N el >1.13 x 10 20 cm -3 , which was explained by merging of the impurity band with the conduction band. The optical properties were explained by using Hamberg et al.'s band-to-band transitions and classical Drude theory. The electrical behaviour of the samples shows that they are degenerate semiconductors. The 2% Tl-doped CdO sample shows an increase in its mobility by about 1.4 times, conductivity by 5 times, and carrier concentration by 3.6 times relative to the undoped CdO film. From the transparent-conducting-oxide point of view, Tl is sufficiently effective for CdO doping but does not emulate other dopants like In,Sn,Sc, and Y. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Cadmium sulfide thin films growth by chemical bath deposition

Science.gov (United States)

Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

2018-03-01

Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

Confocal Raman and PL, AFM, and X-ray diffraction studies of CdS:O thin films

International Nuclear Information System (INIS)

Akinori, Suzuki; Kazuki, Wakita; YongGu, Shim; Nazim, Mamedov; Ayaz, Bayramov; Emil, Huseynov

2010-01-01

Full text : CdS has much attention as a window material of thin-film solar cells, for example a CdTe solar cell. In this case, increasing band gap of CdS films leads to rise of conversion efficiency of a solar cell. Recently, it was reported that CdS:O films deposited by rf magnetron sputtering consist of nano-crystals of CdS resulting in increasing the band gap. This work reports confocal Raman and photoluminescence (PL), atomic force microscopy (AFM), and X-ray diffraction studies of CdS:O films deposited by cathode sputtering for formation of nano-crystal of CdS. It was shown that AFM image of CdS:O films annealed at 300, 400 and 500 degrees Celsium. The height of peak and dip on the surface is in the range of 5 and 20 nm in the samples annealed at less than 400 degrees Celsium, while the clear crystalline shape appears in the sample annealed at 500 degrees Celsium. There is also shown X-ray diffraction pattern of CdS:O films. As grown film shows amorphous structure of CdS. On the other hand, the samples annealed at 400 and 500 degrees Celsium display obvious crystalline pattern. The crystal radius of the samples annealed at 300, 400, and 500 degrees Celsium were estimated to be 20, 27, and 37 nm, respectively, according to Scherrers formula. Other results related with the confocal spectroscopy will be also presented.

Optical properties of Cd Se thin films obtained by pyrolytic dew; Propiedades opticas de peliculas delgadas de CdSe obtenidas por rocio pirolitico

Energy Technology Data Exchange (ETDEWEB)

Perez G, A.M. [UPAEP, 72160 Puebla (Mexico); Tepantlan, C.S. [UPT, 43626 Tulancingo, Hidalgo (Mexico); Renero C, F. [INAOE, 72840 Puebla (Mexico)

2006-07-01

In this paper the optical properties of Cd Se thin films obtained by spray pyrolysis are presented. The films are prepared by Sodium Seleno sulphate (Na{sub 2}SSeO{sub 3}) and Cadmium Chloride (CdC{sub 12}) mixing in aqueous environment. Optical parameters of the films (refractive index, absorption coefficient and optical ban gap) were calculated from transmittance spectra. The obtained values of the optical ban gap are compared with the result obtained by other deposition method. (Author)

Structural, optical and electrical characterization of vacuum-evaporated nanocrystalline CdSe thin films for photosensor applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Vipin; Sharma, D.K.; Sharma, Kapil [Krishna Institute of Engineering and Technology, Department of Physics, Ghaziabad (India); Dwivedi, D.K. [M.M.M University of Technology, Department of Physics, Gorakhpur (India)

2016-11-15

II-VI nanocrystalline semiconductors offer a wide range of applications in electronics, optoelectronics and photonics. Thin films of CdSe were deposited onto ultra-clean glass substrates by vacuum evaporation method. The as-deposited films were annealed in vacuum at 350 K. The structural, elemental, morphological, optical and electrical investigations of annealed films were carried out. The X-ray diffraction pattern of the films shows that films were polycrystalline in nature having hexagonal structure with preferential orientation of grains along (002) plane. SEM image indicates that the films were uniform and well covered to the glass substrate. EDAX analysis confirms the stoichiometric composition of the film. Raman spectra were used to observe the characteristic vibrational modes of CdSe. The energy band gap of these films was obtained by absorption spectra. The films were found to have a direct type of transition of band gap occurring at 1.75 eV. The dark electrical conductivity and photoconductivity reveals that the films were semiconducting in nature indicating the suitability of these films for photosensor applications. The Hall effect measurement reveals that the films have n-type electrical conductivity. (orig.)

Effect of chlorine doping on the structural, morphological, optical and electrical properties of spray deposited CdS thin films

Directory of Open Access Journals (Sweden)

T. Sivaraman

2015-10-01

Full Text Available CdS and chlorine doped CdS (CdS:Cl thin films with different Cl-doping levels (0, 2, 4, 6 and 8 at% have been deposited on glass substrates by a spray pyrolysis technique using a perfume atomizer. The effect of Cl doping on the structural, morphological, optical and electrical properties of the films was investigated. XRD patterns revealed that all the films exhibit hexagonal crystal structure with a preferential orientation along the (0 0 2 plane irrespective of the Cl doping level. The particle size value decreases from 22.03 nm to 18.12 nm with increase in Cl concentration. Optical band gap is blue-shifted from 2.48 eV to 2.73 eV with increase in Cl doping concentration. All the films have resistivity in the order of 104 Ω cm. The obtained results confirm that chlorine as an anionic dopant material can enhance the physical properties of CdS thin films to a large extent.

The investigation of solid solutions thin interlayers in CdS/CdTe film heterosystems

International Nuclear Information System (INIS)

Khrypunov, G.; Boyko, B.; Chernykh, O.

1999-01-01

The photo-response spectral dependence of ITO/CdTe/Au/Cu and ITO/CdS/CdTe/Au/Cu film heterosystems were investigated. At illuminations ITO/CdS/CdTe/Au/Cu heterosystems on ITO side a photo-response maximum was observed for photon absorption with a wavelength of 0.87 μm that is stipulated by formation of CdS x Te 1-x solid solutions interlayer with band gap width less than in CdTe layer. By use optical measurement transmittance spectra was selected a spectral photosensitivity interval appropriate to the contribution of non-equilibrium charge carriers generated in solid solutions interlayer by photon absorption with energy less than CdTe film band gap

Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion

Science.gov (United States)

Zhou, Ying; Li, Yang; Luo, Jiajun; Li, Dengbing; Liu, Xinsheng; Chen, Chao; Song, Huaibing; Ma, Jingyuan; Xue, Ding-Jiang; Yang, Bo; Tang, Jiang

2017-07-01

Antimony selenide (Sb2Se3) emerges as a very promising non-toxic absorber material for thin film photovoltaics, and most of the devices, either in the superstrate or substrate configuration, employed CdS as the buffer layer. Due to the peculiar one-dimensional crystal structure of Sb2Se3, severe interfacial diffusion would be expected. In this letter, the interfacial diffusion in CdS/Sb2Se3 photovoltaics was carefully characterized from a combined material and device physics characterization. The results indicated that a buried homojunction located deep inside the Sb2Se3 absorber layer due to Cd diffusion, instead of the apparent CdS/Sb2Se3 heterojunction, dictated charge separation and device performance in Sb2Se3 thin film solar cells. Cd diffusion converted p-type Sb2Se3 into n-type by introducing a donor level with an activation energy of 0.22 eV. Our studies deepen the understanding of Sb2Se3 photovoltaics and shed light on their further performance optimization.

Electrical conduction studies of hot wall deposited CdSe{sub x}Te{sub 1-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore 641014 (India); Balasundaraprabhu, R.; Jayakumar, S.; Kannan, M.D. [Department of Physics, PSG College of Technology, Coimbatore (India)

2008-08-15

CdSe{sub x}Te{sub 1-x} thin films of different compositions have been deposited on cleaned glass substrates using the hot wall deposition technique under conditions very close to thermodynamical equilibrium with minimum loss of material. The electrical conductivity of the deposited films has been studied as a function of temperature. All the films showed a transition from phonon-assisted hopping conduction through the impurity band to grain-boundary-limited conduction in the conduction/valence band at temperature around 325 K. The conductivity has been found to vary with composition; it varied from 0.0027 to 0.0198 {omega}{sup -1} cm{sup -1} when x changed from 0 to 1. The activation energies of the films of different compositions determined at 225 and 400 K have been observed to lie in the range 0.0031-0.0098 and 0.0285-0.0750 eV, respectively. The Hall-effect studies carried out on the deposited films revealed that the nature of conductivity (p or n-type) was dependent on film composition; films with composition x=0 and 0.15 have been found to be p-type and the ones with composition x=0.4, 0.6, 0.7, 0.85 and 1 have been observed to exhibit n-type conductivity. The carrier concentration has been determined and is of the order of 10{sup 17} cm{sup -3}. The majority of carrier mobilities of the films have been observed to vary from 0.032 to 0.183 cm{sup 2} V{sup -1} s{sup -1} depending on film composition. The study of the mobility of the charge carriers with temperature in the range of 300-450 K showed that the mobility increased with 3/2 power of temperature indicating that the type of scattering mechanism in the studied temperature range is the ionized impurity scattering mechanism. (author)

Electrochemical preparation and characterization of n-CdSe sub 0. 65 Te sub 0. 35 polycrystalline thin films: Influence of annealing

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, M T; Ortega, J [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

1989-12-01

CdSe{sub 0.65}Te{sub 0.35} thin films have been prepared by electrodeposition. The films were characterized by X-ray diffraction, optical and photoelectrochemical methods. The influence of annealing treatments on the physical parameters (grain size, d, donor concentration, N{sub D}, and hole diffusion length, L{sub P}) determining the photoelectrochemical behaviour of electrodeposited CdSe{sub 0.65}Te{sub 0.35} thin films in contact with sulfide/polysulfide electrolytes have been systematically studied. (orig.).

Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition

International Nuclear Information System (INIS)

Zheng, B.J.; Lian, J.S.; Zhao, L.; Jiang, Q.

2010-01-01

Transparent indium-doped cadmium oxide (In-CdO) thin films were deposited on quartz glass substrates by pulse laser deposition (PLD) from ablating Cd-In metallic target at a fixed pressure 10 Pa and a fixed substrate temperature 300 deg. C. The influences of indium concentrations in target on the microstructure, optical and electrical performances were studied. When the indium concentration reaches to 3.9 wt%, the as-deposited In-CdO film shows high optical transmission in visible light region, obviously enhanced direct band gap energy (2.97 eV), higher carrier concentration and lower electric resistivity compared with the undoped CdO film, while a further increase of indium concentration to 5.6 wt% induces the formation of In 2 O 3 , which reverse the variation of these parameters and performance.

Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

Directory of Open Access Journals (Sweden)

Sandra Andrea Mayén-Hernández

2014-01-01

Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

In situ observation of electron-beam-induced dewetting of CdSe thin film embedded in SiO2

DEFF Research Database (Denmark)

Fabrim, Zacarias Eduardo; Kjelstrup-Hansen, Jakob; Fichtner, Paulo F. P.

In this work we show the dewetting process of the CdSe thin films induced by electron beam irradiation. A multilayer heterostructure of SiO2/CdSe/SiO2 was made by a magnetron sputtering process. A plan-view (PV) sample was irradiated with 200 kV electrons in the TEM with two current densities: 0.......33 A.cm2 and 1.0 A.cm2 and at 80 kV with 0.37 A.cm2. The dewetting of the CdSe film is inferred by a number of micrographs taken during the irradiation. The microstructural changes were analyzed under the assumption of being induced by ballistic collision effects in the absence of sample heating....

Electrochemical synthesis of photosensitive nano-nest like CdSe{sub 0.6}Te{sub 0.4} thin films

Energy Technology Data Exchange (ETDEWEB)

Shinde, Surendra K., E-mail: surendrashinde.phy@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S (India); Thombare, Jagannath V. [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S (India); Dubal, Deepak P. [Department of Electrochemistry, Technische Universität Chemnitz Institut für Chemie, Straße der Nationen 62, D-09111 Chemnitz (Germany); Fulari, Vijay J., E-mail: vijayfulari@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S (India)

2013-10-01

Polycrystalline CdSe{sub 0.6}Te{sub 0.4} thin films were deposited on stainless steel and ITO coated glass (ITO) substrates by using simple and inexpensive electrodeposition method. CdSe{sub 0.6} Te{sub 0.4} films are characterized by different characterization techniques such as X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Fourier transform infrared spectroscopy (FTIR) and contact angle measurement. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. FE-SEM studies reveal that the entire substrate surface is covered with CdSe{sub 0.6} Te{sub 0.4} nano-nest. Formation of CdSe{sub 0.6}Te{sub 0.4} compound was confirmed from the FTIR studies. Optical absorption study shows the presence of direct transition and a considerable band gap, E{sub g} = 1.7 eV. Surface wettability with solid–liquid interface showed hydrophilic nature with water contact angle 57° (<90°). Further photovoltaic activity of CdSe{sub 0.6}Te{sub 0.4} films were studied by forming the photoelectrochemical cell having CdSe{sub 0.6}Te{sub 0.4}/1 M (Na{sub 2}S + S + NaOH)/C cell configuration. The efficiency and fill factor of these PEC cells are found to be 0.64% and 0.49 respectively.

Structural and photocarrier radiometric characterization of Cux(CdTe)yOz thin films growth by reactive sputtering

International Nuclear Information System (INIS)

Velazquez-Hernandez, R.; Rojas-Rodriguez, I.; Carmona-Rodriguez, J.; Jimenez-Sandoval, S.; Rodriguez-Garcia, M.E.

2011-01-01

This research presents a structural and photocarrier radiometric (PCR) characterization of Cu x (CdTe) y O z thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu 2 Te and CdO.

Photoluminescence enhancement in nanocomposite thin films of CdS-ZnO

International Nuclear Information System (INIS)

Ayyub, Pushan; Vasa, Parinda; Taneja, Praveen; Banerjee, Rajarshi; Singh, B.P.

2005-01-01

We show that the photoluminescence emitted from a dense, two-component quantum dot ensemble on a thin film is significantly higher and decays much faster than that from quantum dots of either of the two pure systems (CdS and ZnO). The semiconductor nanocomposite, in which the characteristic grain size of each species was 2-3 nm, was deposited directly on Si wafers by high-pressure magnetron sputtering, and exhibits a single, relatively sharp optical absorption edge

Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

International Nuclear Information System (INIS)

Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

2005-01-01

The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

Science.gov (United States)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2016-09-01

Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

Structural, optical and electrical studies on pulse electrodeposited CdIn2S4 thin films

International Nuclear Information System (INIS)

Kokate, A.V.; Asabe, M.R.; Shelake, S.B.; Hankare, P.P.; Chougule, B.K.

2007-01-01

CdIn 2 S 4 thin films were prepared by pulse electrodeposition technique over F:SnO 2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO 4 , InCl 3 and Na 2 S 2 O 3 . The growth kinetics of the film has been studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current and pH of the bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films shows polycrystalline nature. Energy dispersive analysis by X-ray (EDAX) confirms nearly stoichiometric CdIn 2 S 4 nature of the film. Scanning electron microscope (SEM) studies show that, the deposited films are well adherent and grains are uniformly distributed over the surface of the substrate. The optical transmission spectra show a direct band gap of 2.16 eV. Conductivity measurements have been carried out at different temperatures and electrical parameters such as activation energy, trapped energy state and barrier heights etc. have been determined

SHI induced enhancement in green emission from nanocrystalline CdS thin films for photonic applications

International Nuclear Information System (INIS)

Kumar, Pragati; Saxena, Nupur; Chandra, Ramesh; Gao, Kun; Zhou, Shengqiang; Agarwal, Avinash; Singh, Fouran; Gupta, Vinay; Kanjilal, D.

2014-01-01

Intense green emission is reported from nanocrystalline CdS thin films grown by pulsed laser deposition. The effect of ion beam induced dense electronic excitation on luminescence property of CdS films is explored under irradiation using 70 MeV 58 Ni 6+ ions. It is found that swift heavy ion beam irradiation enhances the emission intensity by an order of 1 and broadens the emission range. This feature is extremely useful to enhance the performance of different photonic devices like light emitting diodes and lasers, as well as luminescence based sensors. To examine the role of energy relaxation process of swift heavy ions in creation/annihilation of different defect levels, multi-peaks are fitted in photoluminescence spectra using a Gaussian function. The variation of contribution of different emissions in green emission with ion fluence is studied. Origin of enhancement in green emission is supported by various characterization techniques like UV–visible absorption spectroscopy, glancing angle X-ray diffraction, micro-Raman spectroscopy and transmission electron microscopy. A possible mechanism of enhanced GE due to ion beam irradiation is proposed on the basis of existing models. -- Highlights: • Room temperature green luminescence nanocrystalline CdS thin films grown by pulsed laser deposition. • Enhanced green emission by means of swift heavy ion irradiation. • Multipeak fitting of photoluminescence spectra using a Gaussian function. • Variation of area contributed by different emissions in green emission is studied with respect to ion fluence. • Mechanism of enhanced green emission is discussed based on creation/annihilation of defects due to ion beam irradiation

SHI induced enhancement in green emission from nanocrystalline CdS thin films for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Shahmat Ganj Road, Bareilly 243005, Uttar Pradesh (India); Saxena, Nupur [Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Chandra, Ramesh [Institute Instrumentation Centre, Indian Institute of Technology, Roorkee 247667 (India); Gao, Kun; Zhou, Shengqiang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 510119, 01314 Dresden (Germany); Agarwal, Avinash [Department of Physics, Bareilly College, Shahmat Ganj Road, Bareilly 243005, Uttar Pradesh (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Gupta, Vinay [Department of Physics and Astrophysics, Delhi University, Delhi 110007 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India)

2014-03-15

Intense green emission is reported from nanocrystalline CdS thin films grown by pulsed laser deposition. The effect of ion beam induced dense electronic excitation on luminescence property of CdS films is explored under irradiation using 70 MeV {sup 58}Ni{sup 6+} ions. It is found that swift heavy ion beam irradiation enhances the emission intensity by an order of 1 and broadens the emission range. This feature is extremely useful to enhance the performance of different photonic devices like light emitting diodes and lasers, as well as luminescence based sensors. To examine the role of energy relaxation process of swift heavy ions in creation/annihilation of different defect levels, multi-peaks are fitted in photoluminescence spectra using a Gaussian function. The variation of contribution of different emissions in green emission with ion fluence is studied. Origin of enhancement in green emission is supported by various characterization techniques like UV–visible absorption spectroscopy, glancing angle X-ray diffraction, micro-Raman spectroscopy and transmission electron microscopy. A possible mechanism of enhanced GE due to ion beam irradiation is proposed on the basis of existing models. -- Highlights: • Room temperature green luminescence nanocrystalline CdS thin films grown by pulsed laser deposition. • Enhanced green emission by means of swift heavy ion irradiation. • Multipeak fitting of photoluminescence spectra using a Gaussian function. • Variation of area contributed by different emissions in green emission is studied with respect to ion fluence. • Mechanism of enhanced green emission is discussed based on creation/annihilation of defects due to ion beam irradiation.

Chemical Bath Deposition and Characterization of CdS layer for CZTS Thin Film Solar Cell

OpenAIRE

Kamal, Tasnim; Parvez, Sheikh; Matin, Rummana; Bashar, Mohammad Shahriar; Hossain, Tasnia; Sarwar, Hasan; Rashid, Mohammad Junaebur

2016-01-01

CZTS is a new type of an absorber and abundant materials for thin film solar cells (TFSC). Cadmium sulfide (CdS) is the n-type buffer layer of it with band gap of 2.42 eV. Cadmium sulfide (CdS) buffer layer of CZTS solar cell was deposited on soda-lime glass substrates by the Chemical Bath Deposition(CBD) method, using anhydrous Cadmium chloride(CdCl_2) and Thiourea (CS(NH_2)_2). Deposition of CdS using CBD is based on the slow release of Cd^ ions and S^ ions in an alkaline bath which is achi...

The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

Science.gov (United States)

Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

2018-03-01

The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

Science.gov (United States)

Rajanikant, Ray Jayminkumar

pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low-cost improved SILAR technique

Energy Technology Data Exchange (ETDEWEB)

Ravichandran, K. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613503, Tamil Nadu (India); Nisha Banu, N. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613503, Tamil Nadu (India); Research Department of Physics, Kunthavai Naachiyaar Government Arts College for Women (Autonomous), Thanjavur 613007, Tamil Nadu (India); Baneto, M. [CUER-UL, Universite de Lome, BP 1515, Lome (Togo); Senthamil Selvi, V. [Research Department of Physics, Kunthavai Naachiyaar Government Arts College for Women (Autonomous), Thanjavur 613007, Tamil Nadu (India)

2016-02-15

Undoped and molybdenum doped CdS thin films were deposited on glass substrates using Improved Successive Ionic Layer Adsorption and Reaction (ISILAR) technique. The Mo doping level was varied from 0 to 15 at.% in steps of 5 at.%. The XRD analysis shows that all the films are polycrystalline with cubic structure and grow preferentially along the (111) plane. The crystallite size increases gradually with the increase in Mo doping level up to 10 at.% and decreases with further doping. The morphological studies reveal that Mo doping significantly affects the grains size. Qualitative and quantitative compositional analysis show that near stoichiometric undoped and Mo doped CdS thin films can be achieved using this ISILAR technique. All the films exhibit high transparency in the visible region with an average transmittance in the range of 85-95%. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

Directory of Open Access Journals (Sweden)

Imyhamy M. Dharmadasa

2017-01-01

Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

Science.gov (United States)

Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

2018-04-01

The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

Cadmium sulphide thin film for application in gamma radiation ...

African Journals Online (AJOL)

Cadmium Sulphide (CdS) thin film was prepared using pyrolytic spraying technique and then irradiated at varied gamma dosage. The CdS thin film absorption before gamma irradiation was 0.6497. Absorbed doses were computed using standard equation established for an integrating dosimeter. The plot of absorbed dose ...

Study of electrostatically self-assembled thin films of CdS and ZnS nanoparticle semiconductors

Science.gov (United States)

Suryajaya

In this work, CdS and ZnS semiconducting colloid nanoparticles coated with organic shell, containing either SO[3-] or NH[2+] groups, were deposited as thin films using the technique of electrostatic self-assembly. The films produced were characterized with UV-vis spectroscopy and spectroscopic ellipsometry - for optical properties; atomic force microscopy (AFM) - for morphology study; mercury probe - for electrical characterisation; and photon counter - for electroluminescence study. UV-vis spectra show a substantial blue shift of the main absorption band of both CdS and ZnS, either in the form of solutions or films, with respect to the bulk materials. The calculation of nanoparticles' radii yields the value of about 1.8 nm for both CdS and ZnS.The fitting of standard ellipsometry data gave the thicknesses (d) of nanoparticle layers of around 5 nm for both CdS and ZnS which corresponds well to the size of particles evaluated from UV-vis spectral data if an additional thickness of the organic shell is taken into account. The values of refractive index (n) and extinction coefficient (k) obtained were about 2.28 and 0.7 at 633 nm wavelength, for both CdS and ZnS.Using total internal reflection (TIRE), the process of alternative deposition of poly-allylamine hydrochloride (PAH) and CdS (or ZnS) layers could be monitored in-situ. The dynamic scan shows that the adsorption kinetic of the first layer of PAH or nanoparticles was slower than that of the next layer. The fitting of TIRE spectra gavethicknesses of about 7 nm and 12 nm for CdS and ZnS, respectively. It supports the suggestion of the formation of three-dimensional aggregates of semiconductor nanoparticles intercalated with polyelectrolyte.AFM images show the formation of large aggregates of nanoparticles, about 40-50 nm, for the films deposited from original colloid solutions, while smaller aggregates, about 12-20 nm, were obtained if the colloid solutions were diluted.Current-voltage (I-V) and capacitance

Photoluminescence studies on Cd(1-x)Zn(x)S:Mn2+ nanocrystals.

Science.gov (United States)

Sethi, Ruchi; Kumar, Lokendra; Pandey, A C

2009-09-01

Highly monodispersed, undoped and doped with Mn2+, binary and ternary (CdS, ZnS, Cd(1-x)Zn(x)S) compound semiconductor nanocrystals have been synthesized by co-precipitation method using citric acid as a stabilizer. As prepared sample are characterized by X-ray diffraction, Small angle X-ray scattering, Transmission electron microscope, Optical absorption and Photoluminescence spectroscopy, for their optical and structural properties. X-ray diffraction, Small angle X-ray scattering and Transmission electron microscope results confirm the preparation of monodispersed nanocrystals. Photoluminescence studies show a significant blue shift in the wavelength with an increasing concentration of Zn in alloy nanocrystals.

Degradation sources of CdTe thin film PV: CdCl{sub 2} residue and shunting pinholes

Energy Technology Data Exchange (ETDEWEB)

Gorji, Nima E. [University of Bologna, Department of Electrical, Electronics and Information Engineering, Bologna (Italy)

2014-09-15

The present work considers two observable phenomena through the experimental fabrication and electrical characterization of the rf-sputtered CdS/CdTe thin film solar cells that extremely reduce the overall conversion efficiency of the device: CdCl{sub 2} residue on the surface of the semiconductor and shunting pinholes. The former happens through nonuniform treatment of the As-deposited solar cells before annealing at high temperature and the latter occurs by shunting pinholes when the cell surface is shunted by defects, wire-like pathways or scratches on the metallic back contact caused from the external contacts. Such physical problems may be quite common in the experimental activities and reduce the performance down to 4-5 % which leads to dismantle the device despite its precise fabrication. We present our electrical characterization on the samples that received wet CdCl{sub 2} surface treatment (uniform or nonuniform) and are damaged by the pinholes. (orig.)

The Influence of Temperature on the Formation of Cubic Structured CdO Nanoparticles and Their Thin Films from Bis(2-hydroxy-1-naphthaldehydatocadmium(II Complex via Thermal Decomposition Technique

Directory of Open Access Journals (Sweden)

Thokozani Xaba

2017-01-01

Full Text Available Recently, researchers have developed a great interest in the synthesis of metal oxide nanoparticles due to their potential applications in various fields of science and industry, especially in catalysis, due to their high activity. Bis(2-hydroxy-1-naphthaldehydatocadmium(II complexes were prepared and used as precursors for the synthesis of cadmium oxide nanoparticles via thermal decomposition method using HDA as a stabilizing agent. The prepared complexes were also used as single source precursors to prepare CdO thin films onto the glass substrates by spin coating and were annealed at 250, 300, and 350°C, respectively. The precursors were characterized by Fourier transform infrared (FTIR spectroscopy, elemental analysis, nuclear magnetic resonance (NMR, and thermogravimetric analysis (TGA. The synthesized CdO nanoparticles and CdO thin films were characterized by ultraviolet-visible (UV-vis spectroscopy, photoluminescence (PL, X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM, and atomic force microscopy (AFM.

Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films

International Nuclear Information System (INIS)

Patil, S.B.; Singh, A.K.

2010-01-01

In the present paper photoelectrochemical (PEC) performance of bath deposited CdS thin films based on complexing agents i.e. ammonia and triethanolamine (TEA) has been discussed. Effect of annealing has also been analyzed. The as-deposited and annealed (at 523 K for 1 h in air) films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorption spectroscopy, SEM, electrochemical impedance spectroscopy (EIS), and PEC properties. XRD studies revealed that the films were nanocrystalline in nature with mixed hexagonal and cubic phases. TEA complex resulted in better crystallinity. Further improvement in the crystallinity of the films was observed after air annealing. The marigold flower-like structure, in addition to flakes morphology, was observed with TEA complex, whereas for ammonia complex only flakes morphology was observed. The UV-vis absorption studies revealed that the optical absorption edge for the films with ammonia and TEA complex was around 475 nm and 500 nm, respectively. Annealing of the films resulted in red shift in the UV-vis absorption. The PEC cell performance of CdS films was found to be strongly affected by crystallinity and morphology of the films resulted due to complexing agent and annealing. The air annealed film deposited using TEA complex showed maximum short circuit current density (J sc ) and open circuit voltage (V oc ) i.e. 99 μA/cm 2 and 376 mV respectively, under 10 mW/cm 2 of illumination. The films deposited using TEA complex showed good stability under PEC cell conditions.

On the carrier transport in metal-insulator-metal structures for CdTe thin film

International Nuclear Information System (INIS)

Choi, K.W.; Choi, C.K.

1982-01-01

According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the Alsup(+) and Agsup(+) electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film. (Author)

Effect of TEA on characteristics of CdS/PbS thin film solar cells prepared by CBD

Directory of Open Access Journals (Sweden)

Sattarian H.

2016-09-01

Full Text Available In this study, a solar cell with a glass/ITO/CdS/PbS/Al structure was constructed. Both window (CdS and absorption (PbS layers were deposited by chemical bath deposition (CBD method. The CdS window layer was deposited on ITO-glass. The PbS nanocrystalline thin film was prepared with and without triethanolamine on CdS films at bath temperature of 25 °C. CdS and PbS nanocrystals were identified using XRD and SEM. The cells are photosensitive in a large spectral range (at visible and near infrared regions. The cell with absorbing layer obtained from the bath without TEA has higher efficiency with the following parameters: the open circuit voltage (Voc is 275 mV, short circuit current (Jsc is 12.24 mA/cm2, maximum voltage (Vmax is 165 mV and maximum current (Jmax is 7.11 mA/cm2 with the efficiency η = 1.31 %, fill factor FF is 32 % under the illumination intensity of 90 mW/cm2. The cells have an area of 0.15 cm2.

High-quality CdTe films from nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Energy Technology Data Exchange (ETDEWEB)

Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Li, Yan Tao [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Material Science and Engineering, Henan University of Technology, Zhengzhou 454052 (China); Hu, Chu Xiong [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

2015-09-15

Highlights: • CdS/silicon nanoporous pillar array (CdS/Si-NPA) was prepared by a CBD method. • The PL spectrum of CdS/Si-NPA was measured at different temperatures, from 10 to 300 K. • The PL spectrum was composed of four emission bands, obeying different mechanisms. • The PL degradation with temperature was due to phonon-induced escape of carriers. - Abstract: Si-based cadmium sulfide (CdS) is a prospective semiconductor system in constructing optoelectronic nanodevices, and this makes the study on the factors which may affect its optical and electrical properties be of special importance. Here we report that CdS thin film was grown on Si nanoporous pillar array (Si-NPA) by a chemical bath deposition method, and the luminescent properties of CdS/Si-NPA as well as its mechanism were studied by measuring and analyzing its temperature-dependent photoluminescence (PL) spectrum. The low-temperature measurement disclosed that the PL spectrum of CdS/Si-NPA could be decomposed into four emission bands, a blue band, a green band, a red band and an infrared band. The blue band was due to the luminescence from Si-NPA substrate, and the others originate from the CdS thin film. With temperature increasing, the peak energy, PL intensity and peak profile shape for the PL bands from CdS evolves differently. Through theoretical and fitting analyses, the origins of the green, red and infrared band are attributed to the near band-edge emission, the radiative recombination from surface defects to Cd vacancies and those to S interstitials, respectively. The cause of PL degradation is due to the thermal quenching process, a phonon-induced electron escape but with different activation energies. These results might provide useful information for optimizing the preparing parameters to promote the performance of Si-based CdS optoelectronic devices.

Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi2S3 thin films prepared by solution growth technique at room temperature

Science.gov (United States)

Shaikh, Shaheed U.; Siddiqui, Farha Y.; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, Pawan K.; Sharma, Ramphal

2015-01-01

CdS-Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au9+ ions with the energy of 120 MeV at fluence 5×1012 ions/cm2 using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and I-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi2S3 bi-layer thin films are presented.

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

Energy Technology Data Exchange (ETDEWEB)

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

Thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth (GREG) technique using photoacoustic methods

International Nuclear Information System (INIS)

Albor-Aguilera, M.L.; Gonzalez-Trujillo, M.A.; Cruz-Orea, A.; Tufino-Velazquez, M.

2009-01-01

In this work we report the study of the thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth technique. CdS films were grown on pyrex glass substrates. These studies were carried out using an open photoacoustic cell made out of an electret microphone. From X-ray diffraction, atomic force microscope and photoluminescence measurements we observed polycrystalline CdS films with good morphology and crystalline quality. We obtained a thermal diffusivity coefficient of our samples with values ranging from 3.15 to 3.89 x 10 -2 cm 2 /s. For comparison, we measured a value of 1.0 x 10 -2 cm 2 /s for the thermal diffusivity coefficient of a CdS single crystal. We measured an energy gap value of 2.42 eV for our samples by using a photoacoustic spectroscopy system

Nanostructured CdS thin films deposited by spray pyrolysis method

Energy Technology Data Exchange (ETDEWEB)

Kerimova, A.; Bagiyev, E.; Aliyeva, E.; Bayramov, A. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku (Azerbaijan)

2017-06-15

Influence of solution pH on the structural and optical properties of CdS films deposited by conventional spray pyrolysis technique was studied. X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Photoluminescence spectroscopy (PLS), and Spectroscopic Ellipsometry (SE) methods were used for the characterization of the deposited films. PL spectrum of the film deposited from the solution with pH = 10.2 shows broad-band PL emission located at 460 nm (2.7 eV), which can be attributed to the quantum size effect at grain sizes of <10 nm. No shifts of ε{sub 1} and ε{sub 2} due to the quantum size effect are observed in dielectric function spectra, what can be caused by low concentration of nano-sized (<10 nm) CdS grains. The change in the film properties with the pH of the solution was analyzed in terms of variation of grain sizes of the polycrystalline films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Influence of composition on optical and dispersion parameters of thermally evaporated non-crystalline Cd{sub 50}S{sub 50−x}Se{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hassanien, A.S., E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Dept., Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia); Akl, Alaa A. [Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

2015-11-05

Non-crystalline thin films of chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} system (30 ≤ x ≤ 50) were obtained by thermal evaporation technique onto a pre-cleaned glass substrate at a vacuum of 8.2 × 10{sup −4} Pa. The deposition rate and film thickness were kept constant at about 8 nm/s and 200 nm, respectively. Amorphous/crystalline nature and chemical composition of films have been checked using X-ray diffraction and energy dispersive X-ray spectroscopy (EDX). Optical properties of thin films were investigated and studied using the corrected transmittance, T(λ) and corrected reflectance, R(λ) measurements. Obtained data reveal that, the indirect optical energy gap (E{sub g}) was decreased from 2.21 to 1.57 eV. On the contrary, Urbach energy (band tail width), E{sub U} was found to be increased from 0.29 to 0.45 eV. This behavior is believed to be associated with the increase of Se-content instead of S-content in the thin films of Cd{sub 50}S{sub 50−x}Se{sub x} system. Chemical bond approach model, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. Optical density, skin depth, extinction coefficient, refractive index and optical conductivity of chalcogenide CdSSe thin films were discussed as functions of Se-content. Using Wemple-DiDomenico single oscillator model, the refractive index dispersion and energy parameters and their dependence on Se content were studied. - Highlights: • Amorphous thin films of thickness 200 nm of Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) have prepared. • Optical properties, indirect optical energy gap and band tail width were studied. • Chemical bond approach, CBA was used to analyze the obtained values of E{sub g} and E{sub U}. • New data of dispersion refractive index parameters were investigated and discussed.

Enhanced performance of CdS/CdTe thin-film devices through temperature profiling techniques applied to close-spaced sublimation deposition

Energy Technology Data Exchange (ETDEWEB)

Xiaonan Li; Sheldon, P.; Moutinho, H.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

The authors describe a methodology developed and applied to the close-spaced sublimation technique for thin-film CdTe deposition. The developed temperature profiles consisted of three discrete temperature segments, which the authors called the nucleation, plugging, and annealing temperatures. They have demonstrated that these temperature profiles can be used to grow large-grain material, plug pinholes, and improve CdS/CdTe photovoltaic device performance by about 15%. The improved material and device properties have been obtained while maintaining deposition temperatures compatible with commercially available substrates. This temperature profiling technique can be easily applied to a manufacturing environment by adjusting the temperature as a function of substrate position instead of time.

Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

2011-08-31

The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

Cadmium-manganese oxide composite thin films: Synthesis, characterization and photoelectrochemical properties

Energy Technology Data Exchange (ETDEWEB)

Mansoor, M.A. [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Faculty of Science, Kuala Lumpur 50603 (Malaysia); Ebadi, M. [Solar Energy Research Institute, University Kebangsaan Malaysia, Bangi 43600, Selangor (Malaysia); Mazhar, M., E-mail: mazhar42pk@yahoo.com [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Huang, N.M. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Faculty of Science, Kuala Lumpur 50603 (Malaysia); Mun, L.K.; Misran, M. [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Basirun, W.J. [Department of Chemistry, Faculty of Science, University of Malaya, Kuala Lumpur 50603 (Malaysia); Institute of Nanotechnology and Catalysis (NanoCat), University Malaya, Kuala Lumpur 50603 (Malaysia)

2017-01-15

Ceramic composite CdO–Mn{sub 2}O{sub 3} thin films have been deposited on fluorine doped tin oxide (FTO) coated glass substrates by aerosol assisted chemical vapour deposition (AACVD) using a 1:1 mixture of cadmium complex, [Cd(dmae){sub 2}(OAc){sub 2}]·H{sub 2}O (1) (where dmae = 2-dimethylaminoethanolato and OAc = acetato), and diacetatomanganese (II). The phase purity, stoichiometry and thickness of the films were examined by X-ray diffraction (XRD), Fourier transformed infra-red (FTIR), Raman spectroscopy, field emission gun scanning electron microscopy (FEG-SEM), energy dispersive X-ray spectroscopy (EDX), UV–Vis spectroscopy and profilometer. The FEG-SEM analysis illustrated that the morphology of the fabricated films was influenced by the type of solvent. The optical direct band gap of the film fabricated from THF solution was 1.95 eV. From the current–voltage characteristics it is evident that the CdO–Mn{sub 2}O{sub 3} composite semiconductor electrode exhibits n-type behaviour and the photocurrent density was found to be dependent on the deposition medium. The film deposited from THF solution displayed maximum photocurrent density of 4.80 mA cm{sup −2} at 0.65 V vs. Ag/AgCl/3 M KCl (∼1.23 V vs. RHE) in 0.5 M NaOH electrolyte. - Highlights: • Single crystal X-ray structure of [Cd(dmae){sub 2}(OAc){sub 2}]·H{sub 2}O (1). • CdO-Mn{sub 2}O{sub 3} composite photoanode thin films. • Optical band gap of CdO-Mn{sub 2}O{sub 3} photoanode. • Photoelectrochemical and EIS studies.

Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

International Nuclear Information System (INIS)

Ubale, A.U.; Bargal, A.N.

2010-01-01

This paper reports the preparation of photosensitive nanostructured CdS thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type. (author)

In-situ boron doping of chemical-bath deposited CdS thin films

International Nuclear Information System (INIS)

Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

2009-01-01

In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

International Nuclear Information System (INIS)

Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

2011-01-01

Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

2010-01-01

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

KAUST Repository

Salas-Villasenor, A. L.

2010-06-29

Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

Thin films of copper antimony sulfide: A photovoltaic absorber material

Energy Technology Data Exchange (ETDEWEB)

Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

2015-01-15

Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

Energy Technology Data Exchange (ETDEWEB)

Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

1999-09-30

ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

Directory of Open Access Journals (Sweden)

K. Usharani

2015-06-01

Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

Energy Technology Data Exchange (ETDEWEB)

Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com [Thin film research Lab, U.C. College, Aluva, Kerala (India); Pradeep, B., E-mail: bp@cusat.ac.in [Solid State Physics Laboratory, Cochin University of science and Technology, Cochin (India); Shripathi, T., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com; Ganesan, V., E-mail: shri@csr.res.in, E-mail: vganesancsr@gmail.com [UGC-DAE CSR, Khandwa Road, Indore, 452001, Madhya Pradesh (India)

2014-10-15

Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ∼50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2 to 2.7, suggesting possibility of band gap engineering in the n-type films.

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

CERN Document Server

Barbosa, M B; Redondo-Cubero, A; Miranda, S M C; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Méndez, B; Johnston, K; Alves, E; Vianden, R; Araújo, J P; Lorenz, K; Correia, J G

2013-01-01

The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\\,$min.) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe-defect complex. The ternary Cd$_x$Zn$_{1-x}$O (x=0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga$_2$O$_3$ samples, the substitution of the Cd probes in the octahedral Ga-site was observed, demonstrating the potential of ion-implantation for the doping of nanowires.

Increasing the electrical anisotropy of solution-grown PbI2 thin films by addition of CdI2

International Nuclear Information System (INIS)

Ponpon, J.P.; Amann, M.

2010-01-01

In the present study up to 20% CdI 2 has been added to a lead iodide-water solution, which is used to grow PbI 2 polycrystalline thin films. As a result, a significant increase in the anisotropy of the lead iodide film's electrical properties has been observed: the resistivity in the direction parallel to the c-axis reached 10 15 Ω cm but did not change significantly in the orthogonal direction. This behavior can be explained by the modification of the transport properties related to the crystallographic structure of the films along the c-axis. As suggested by thermally stimulated current measurements, only a small number of the Cd atoms incorporated into the PbI 2 lattice could behave as dopants.

Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

Energy Technology Data Exchange (ETDEWEB)

Powell, R. C.; Meyers, P. V.

2004-02-01

Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

Research and development of CdTe based thin film PV solar cells

Science.gov (United States)

Diso, Dahiru Garba

The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

Directory of Open Access Journals (Sweden)

I. M. Dharmadasa

2014-06-01

Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

González, J.O. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Shaji, S.; Avellaneda, D. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, México (Mexico); Castillo, A.G.; Roy, T.K. Das [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); and others

2013-05-15

Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V

The morphology, microstructure, and luminescent properties of CdS/CdTe films

Energy Technology Data Exchange (ETDEWEB)

Al-Jassim, M.M.; Dhere, R.G.; Jones, K.M.; Hasoon, F.S.; Sheldon, P. [National Renewable Energy Lab., Golden, CO (United States)

1998-09-01

This paper is concerned with the characterization of CdS/CdTe polycrystalline thin films for solar cells. The morphology, microstructure, and luminescent properties are studied by a powerful array of characterization techniques. The presence of pinholes in 100-nm thick CdS is observed. The microstructure of CdS and CdTe films is shown to be heavily faulted polycrystalline. The effect of deposition temperature on the grain size and the microstructure is investigated. The interdiffusion of sulfur and tellurium at the CdS/CdTe interface is studied for the first time by a nanoprobe technique. Considerable amount of sulfur is detected in CdTe in the vicinity of the interface of samples deposited at 625 C. The recombination behavior of grain boundaries and intragrain defects is investigated in as-deposited and heat-treated samples.

The carbonization of thin polyaniline films

Czech Academy of Sciences Publication Activity Database

Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

2012-01-01

Roč. 520, č. 19 (2012), s. 6088-6094 ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

Plasmon resonance-induced photoluminescence enhancement of CdTe/Cds quantum dots thin films

Energy Technology Data Exchange (ETDEWEB)

Wang, Hongyu [Nanjing University of Posts and Telecommunications, Nanjing 210003 (China); National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wu, Yangqing; Xu, Jun; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2016-11-30

Highlights: • CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated. • PL intensity of the quantum dots films was enhanced due to Au nanorods. • Internal quantum efficiency increased due to localized surface plasmon resonance. • The lifetimes of quantum dots films decreased after interaction with Au nano-rods. - Abstract: CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated on planar Si substrates. The optical properties of all samples were investigated and the corresponding simulations were studied. It was found that the photoluminescence intensity of the CdTe/CdS quantum dots films was enhanced about 9-fold after the incorporation of Au nano-rods, the internal quantum efficiency increased from 24.3% to 35.2% due to the localized surface plasmon resonance. The time-resolved luminescence decay curves showed that the lifetimes of CdTe/CdS quantum dots films decreased to 2.8 ns after interaction with Au nano-rods. The results of finite-difference time-domain simulation indicated that Au nano-rods induced the localization of electric field, which enhanced the PL intensity of quantum dots films in the vicinity of Au nano-rods.

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

Science.gov (United States)

Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

Structural and photocarrier radiometric characterization of Cu{sub x}(CdTe){sub y}O{sub z} thin films growth by reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Velazquez-Hernandez, R., E-mail: ruvel2@yahoo.com.m [Division de Investigacion y Posgrado, Facultad de Ingenieria, Universidad Autonoma de Queretaro, Cerro de las Campanas S/N, Queretaro, Qro., Mexico, C.P. 76010 (Mexico); Rojas-Rodriguez, I. [Universidad Tecnologica de Queretaro, Av. Pie de la Cuesta S/N, Sn. Pedrito Penuelas, Queretaro, Qro. Mexico (Mexico); Carmona-Rodriguez, J.; Jimenez-Sandoval, S. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro., Mexico C.P.76001 (Mexico); Rodriguez-Garcia, M.E. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriqulla, Apartado Postal 1-1010, Queretaro, Qro. Mexico (Mexico)

2011-01-31

This research presents a structural and photocarrier radiometric (PCR) characterization of Cu{sub x}(CdTe){sub y}O{sub z} thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu{sub 2}Te and CdO.

Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Hassanien, Ahmed Saeed, E-mail: a.s.hassanien@gmail.com [Engineering Mathematics and Physics Department, Faculty of Engineering (Shoubra), Benha University (Egypt); Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911 (Saudi Arabia)

2016-06-25

The objective of this work is to study the influence of the addition of more Se on dielectric properties, opto-electrical parameters and electronic polarizability of amorphous chalcogenide Cd{sub 50}S{sub 50−x}Se{sub x} thin films (30 ≤ x ≤ 50 at%). Thin films of thickness 200 nm were synthesized by vacuum deposition at ≈8.2 × 10{sup −4} Pa. Both refractive index and extinction coefficient were used to obtain all the studied parameters. The high frequency dielectric constant, real and imaginary parts of dielectric constant were discussed. Drude theory was applied to investigate opto-electrical parameters, like optical carrier concentration, optical mobility and optical resistivity. Moreover, other parameters were investigated and studied, e.g. Drude parameters, volume and surface energy loss functions, dielectric loss factor, dielectric relaxation time, complex optical conductivity and electronic polarizability as well as optical electronegativity and third-order nonlinear optical susceptibility. Values of electronic polarizability and nonlinear optical susceptibility were found to be decreased while optical electronegativity increased as Se-content was increased. Increment of Se-content in amorphous Cd{sub 50}S{sub 50−x}Se{sub x} thin films has also led to minimize the energy losses when electromagnetic waves propagate through films as well as optical conductivity and the speed of light increased. The other studied properties and parameters of Cd{sub 50}S{sub 50−x}Se{sub x} films were found to be strongly dependent upon Se-content. - Highlights: • Thermally evaporated amorphous Cd{sub 50}S{sub 50−x}Se{sub x} (30 ≤ x ≤ 50) thin films were deposited. • Refractive index and absorption index were used to determine almost all properties. • Dielectric properties, Drude parameters and electronic polarizability were studied. • Addition of more Se to CdSSe matrix led to improve the opto-electrical properties. • New data were obtained and

Optical, structural and morphological properties of CdS-CdCO{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Chavez P, M.; Sosa S, A. [Benemerita Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigaciones en Dispositivos Semiconductores, Apdo. Postal 1067, 72001 Puebla, Puebla (Mexico); Juarez D, G. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Computacion, Apdo. Postal 1067, 72570 Puebla, Puebla (Mexico); Chaltel L, L. A.; Gutierrez P, R.; Hernandez T, G.; Portillo M, O. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Ciencia de Materiales, Apdo. Postal 1067, 72001 Puebla, Puebla (Mexico); Cruz C, S., E-mail: j.gabriel@rocketmail.com [Universidad Politecnica de Tlaxcala, Departamento de Ingenieria Quimica, San Pedro Xalcaltzinco, Tepeyanco, Tlaxcala (Mexico)

2015-07-01

CdS-CdCO{sub 3} thin films were grown by chemical bath deposition. Different constant deposition temperatures were employed in the range of 20-80 grades C. From X-ray diffraction results can be observed that intensity of CdS peak is abruptly reduced when deposition temperature is decreased. By Sem images the formation and change in shape and size of crystallites can be observed as temperature is decreased. The forbidden energy band gap was 2.4-4.1 eV, determined from optical absorption. The formation of products was further confirmed with Ftir studies. (Author)

Nanocrystalline CdTe thin films by electrochemical synthesis

Directory of Open Access Journals (Sweden)

Ramesh S. Kapadnis

2013-03-01

Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

2017-01-01

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

Structural analysis of CdS thin films obtained by multiple dips of oscillating chemical bath

Energy Technology Data Exchange (ETDEWEB)

Gutierrez Lazos, C.D. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Rosendo, E., E-mail: erosendo@siu.buap.m [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Ortega, M. [Seccion de Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados, Av. Instituto Politecnico Nacional 2508, Col. San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Oliva, A.I. [Departamento de Fisica Aplicada, Centro de Investigacion y de Estudios Avanzados, Unidad Merida, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico); Tapia, O.; Diaz, T.; Juarez, H.; Garcia, G. [Centro de Investigacion en Dispositivos Semiconductores, Universidad Autonoma de Puebla, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico); Rubin, M. [Facultad de Ciencias de la Computacion, 14 Sur y San Claudio, Col. San Manuel, C.P. 72570, Puebla (Mexico)

2009-11-25

Highly oriented CdS thin films with thicknesses greater than 1 mum were deposited by multiple dips, using oscillating chemical bath deposition (OCBD) at the bath temperature of 75 deg. C, and deposition time ranging from 15 to 75 min for a single dip. Samples with different thickness were prepared by repeating the deposition process for two and three times. The films deposited by a single dip have the alpha-greenockite structure showing the (0 0 2) as preferred orientation, as indicated by the X-ray diffraction measurements. This notable characteristic is preserved in the samples obtained from two or three dips. The crystallite size for the samples deposited by a single dip depends on the deposition time, because it varied from 23 to 37 nm as the deposition time increased. Nevertheless for samples deposited by two and three dips, the grain size shows no noticeable change, being about 22 nm.

Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots

International Nuclear Information System (INIS)

Lee, Ling; Dai, Yue-Ru; Yang, Chu-Shou; Fan, Wen-Chung; Chou, Wu-Ching

2015-01-01

Highlights: • The localized emission in zinc-blende ZnCdSe is induced by excess selenium. • An optimized growth is demonstrated as the VI/II ratio approaches unity. • Size-independent lifetimes are observed in ZnTe/ZnCdSe quantum dots. • Localized electrons in the capping layer dominate size-independent lifetimes. - Abstract: This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes

Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

Science.gov (United States)

Lai, T.; Potter, B. G.; Simmons-Potter, K.

2017-08-01

Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

2014-01-01

The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

Anomalous precipitation hardening in Al-(1 wt%)Cu thin films

NARCIS (Netherlands)

Bergers, L. J. C.; De Hosson, J. Th. M.; Geers, M. G. D.; Hoefnagels, J. P. M.

2018-01-01

This paper concentrates on the precipitation hardening of Al-(1 wt%)Cu thin films. It is shown that in contrast to bulk, the well-known approach of precipitation hardening in confined systems like thin layers and thin films does not operate in the conventional way. This work analyses and discusses

Thin polyaniline and polyaniline/carbon nanocomposite films for gas sensing

Czech Academy of Sciences Publication Activity Database

Lobotka, P.; Kunzo, P.; Kováčová, E.; Vávra, I.; Križanová, O.; Smatko, V.; Stejskal, Jaroslav; Konyushenko, Elena; Omastová, M.; Špitálský, Z.; Mičušík, M.; Krupa, I.

2011-01-01

Roč. 519, č. 12 (2011), s. 4123-4127 ISSN 0040-6090 Institutional research plan: CEZ:AV0Z40500505 Keywords : gas sensor * polyaniline thin film * nanocomposite Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.890, year: 2011

Studies on structural, optical, and photoelectric properties of CdS{sub 1-x}Se{sub x} films fabricated by selenization of chemical bath deposited CdS films

Energy Technology Data Exchange (ETDEWEB)

Lu, Tianyu; Gu, Han; Ge, Zhenhua; Zhang, Lei; Wang, Zhicheng; Fang, Yong; Han, Zhida; Qian, Bin; Jiang, Xuefan [Department of Physics, Changshu Institute of Technology, Changshu (China); Wu, Wangping [School of Mechanical Engineering, Changzhou University, Changzhou (China)

2017-02-15

In this paper, high-photosensitive CdS{sub 1-x}Se{sub x} films are synthesized by a two-step technique, which includes the chemical bath deposition of CdS films and a following selenization process. The structural, optical, and photoelectric properties of the CdS{sub 1-x}Se{sub x} films were investigated. With the substitution of selenium for sulfur atoms, grain sizes of the as-prepared CdS{sub 1-x}Se{sub x} films are effectively enlarged and reach the scales of the films thickness when the selenization temperature exceeds 450 C. With increasing the selenization temperature from 350 to 550 C, the band gaps of CdS{sub 1-x}Se{sub x} films gradually decrease from 2.37 to 1.82 eV. Under the co-action of the grain-size enlargement and band-gap decrease, the CdS{sub 1-x}Se{sub x} films fabricated at 450 C show very pronounced photosensitivity. Noteworthy, the ratio of photo to dark conductivity of the CdS{sub 1-x}Se{sub x} film selenized at 450 C reaches 1.1 x 10{sup 5}, suggesting a promising application potential in the photoelectric devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

In situ, real-time thickness measurement techniques for bath-deposited CdS thin films on Cu(In,Ga)Se2

International Nuclear Information System (INIS)

Mann, Jonathan R.; Noufi, Rommel

2012-01-01

A technique has been developed that can measure the thickness of a 30–70 nm thin film of cadmium sulfide on a Cu(In,Ga)Se 2 substrate, in real time, as it grows in a chemical bath. The technique does not damage the film, and can be used to monitor batch depositions and roll-to-roll depositions with equal accuracy. The technique is based on reflectance spectroscopy through the chemical bath. - Highlights: ► Reflection spectra were collected during the chemical bath deposition of CdS. ► Two algorithms were generated to extract film thickness from each spectrum. ► Two conventional techniques were used to independently verify CdS film thicknesses. ► The accuracies of the algorithms are within 7% of the actual thicknesses. ► The algorithms offer in situ, real time thicknesses through the chemical bath.

Copper zinc tin sulfide-based thin film solar cells

CERN Document Server

Ito, Kentaro

2014-01-01

Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

International Nuclear Information System (INIS)

Steinberger, Hartmut

1998-01-01

This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

Science.gov (United States)

Harris Odum, Nicole Latrice

Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

Science.gov (United States)

Chander, Subhash; Dhaka, M. S.

2018-03-01

The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

On the doping problem of CdTe films: The bismuth case

Energy Technology Data Exchange (ETDEWEB)

Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

2008-08-30

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

On the doping problem of CdTe films: The bismuth case

International Nuclear Information System (INIS)

Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

2008-01-01

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

Science.gov (United States)

Arulanantham, A. M. S.; Valanarasu, S.; Jeyadheepan, K.; Ganesh, V.; Shkir, Mohd

2018-01-01

Herein we report a well-organized analysis on various key-properties of SnS thin films for solar cell fabricated by nebulizer spray pyrolysis technique. X-ray diffraction study reveals the polycrystalline nature of deposited films with orthorhombic crystal structure. The crystallite size was calculated and observed to be in the range of 8-28 nm with increasing molarity of precursor solution. The stoichiometry composition of SnS was confirmed by EDX study. SEM/AFM studies divulge the well-covered deposited surface with spherical grains and the size of grains is increasing with concentration and so the roughness. A remarkable decrease in band gap from 2.6 eV to 1.6 eV was noticed by raising the molar concentration from 0.025 M up to 0.075 M. A single strong emission peak at about 825 nm is observed in PL spectra with enhanced intensity which may be attributed to near band edge emission. From the Hall effect measurement, it was found that the SnS thin film exhibits p-type conductivity. The calculated values of resistivity and carrier concentration are 0.729 Ω cm and 3.67 × 1018/cm3 respectively. Furthermore, to study the photovoltaic properties of SnS thin films a heterojunction solar cell, FTO/n-CdS/p-SnS was produced and the conversion efficiency was recorded about 0.01%.

Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS2 thin film solar cells

International Nuclear Information System (INIS)

Kaufmann, C.A.

2002-01-01

A CulnS 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering the energy band line-up at the heterojunction interface. Motivated through environmental concern and EU legislation it is felt necessary to substitute this potentially toxic layer by an alternative, Cd-free component. This thesis investigates the suitability of various Zn- and In-compounds, in particular In(OH,O) x S y , as alternative buffer layer materials using CBD. Initial experiments were carried out depositing Zn-based compounds from aqueous solutions. Characterization of the layers, the solution and the processed solar cells was performed. This thesis focuses on the investigation of the CBD process chemistry for the deposition of In-compound thin films. A careful study of the morphology and composition of the deposited thin films was conducted using electron microscopy (SEM, HREM), elastic recoil detection analysis, X-ray photoelectron spectroscopy and optical transmission spectroscopy. This allowed conclusions concerning the nucleation and film growth mechanism from the chemical bath. Connections between bath chemistry, different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) x S y or In(OH,O) x S y . In the case of In(OH,O) x S y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell

Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

Energy Technology Data Exchange (ETDEWEB)

Brog, T.K. [Golden Photon, Inc., CO (United States)

1997-02-01

This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells

International Nuclear Information System (INIS)

Cheng, Zimeng; Delahoy, Alan E.; Su, Zhaoqian; Chin, Ken K.

2014-01-01

A model consisting of Shockley Read Hall (SRH) recombination under steady state conditions of constant photon injection is proposed in this work to study the steady state minority carrier lifetime in CdS/CdTe thin film solar cells. The SRH recombination rate versus optical injection level is analytically approximated in the junction and neutral regions. In the neutral region, it is found that the recombination rate through certain defect levels has one constant value under lower optical injection conditions and another constant value under higher optical injection conditions with the transition occurring at a critical optical injection level. By simultaneously solving the equations of charge neutrality, charge conservation and SRH recombination in the neutral region, it is found that the compensation of doping and the reduction of minority carrier lifetime by donors in the p-type semiconductor can each be remedied by optical injection. It is also demonstrated that this optical-dependent SRH recombination is significant in large bandgap thin films. The measured minority carrier diffusion length in a CdS/CdTe solar cells, as determined from the steady-state photo-generated carrier collection efficiency, shows the predicted transition of minority carrier lifetime versus optical injection level. A numerical fitting of the indirectly-measured minority carrier lifetime by assuming the minority carrier mobility gives a non-intuitive picture of the p–n junction with a low free hole concentration but a narrow depletion region width. - Highlights: • Minority carrier lifetimes under different optical injections are solved. • Simplifications of Shockley–Read–Hall recombination equation are discussed. • The compensation of donor can be remedied with optical injection. • The recombination efficiency of donor can be remedied with optical injection. • The minority carrier lifetime transition under illumination was experimentally observed

Nanomechanical properties of GaSe thin films deposited on Si(1 1 1) substrates by pulsed laser deposition

International Nuclear Information System (INIS)

Jian, Sheng-Rui; Juang, Jenh-Yih; Luo, Chih-Wei; Ku, Shin-An; Wu, Kaung-Hsiung

2012-01-01

Highlights: ► GaSe thin films are grown by PLD. ► Structural properties of GaSe thin films are measured by XRD. ► Hardness and Young’s modulus of GaSe thin films are measured by nanoindentation. - Abstract: The correlations between the crystalline structure and mechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(1 1 1) substrates deposited at various deposition temperatures using pulsed laser deposition (PLD). The XRD results indicate that all the GaSe thin films are pure hexagonal phase with highly (0 0 0 l)-oriented characteristics. Nanoindentation results revealed apparent discontinuities (so-called multiple “pop-in” events) in the load-displacement curve, while no discontinuity was observed in the unloading segment of the load-displacement curve. The hardness and Young’s modulus of GaSe thin films determined by the continuous stiffness measurements (CSM) method indicated that both mechanical parameters increased with the increasing deposition temperature with the hardness and the Young’s modulus being increased from 1.2 ± 0.1 to 1.8 ± 0.1 GPa and from 39.6 ± 1.2 to 68.9 ± 2.7 GPa, respectively, as the deposition temperature was raised from 400 to 475 °C. These results suggest that the increased grain size might have played a prominent role in determining the mechanical properties of the PLD-derived GaSe thin films.

Formation of CdS thin films in a chemical bath environment under the action of an external magnetic field

International Nuclear Information System (INIS)

Vaskes-Luna, Kh.G.; Zekhe, A.; Nhukhil'o-Garsiya, M.P.; Starostenko, O.

2000-01-01

The effect of external magnetic field on obtaining thin CdS films on glass sub layers through the method of chemical deposition from the cadmium chloride aqueous solution is studied. The intensity and direction of the magnetic field during deposition obviously affect the number of physical properties of polycrystalline films: thickness, grain size and optical quality. The films characteristics are studied through an atomic-power microscope, light absorption spectroscopy and conductometry in darkness. The results obtained are interpreted on the basis of notions on the cadmium and sulfur specific interaction in the chemical bath with a magnetic field [ru

Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

Science.gov (United States)

Glenis, G. X.; Athanassopoulou, M. D.; Argyropoulos, Th G.; Dervos, C. T.

2015-02-01

Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I-V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm-2) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I-V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I-V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures.

Opto-electrical energy conversion by thin electrolytic CdSe films on Ni substrates

International Nuclear Information System (INIS)

Glenis, G X; Athanassopoulou, M D; Argyropoulos, Th G; Dervos, C T

2015-01-01

Thin-films (300 nm) of zinc-blende (cubic structure) CdSe (111) electrolytically deposited on nickel substrates had their surface characteristics investigated by XRD, SEM, and profilometry scans. A metal-CdSe-metal structure was formed by positioning a Au electrode on top of CdSe and the I–V characteristics of the resulting device were investigated in the dark and under low intensities (≤0.2 mW cm −2 ) of diffused solar radiation. The experimental results show that the illuminated structure is an active device that produces electric power in the 2nd quadrant of the I–V curve. This response may be related to the Ni-to-CdSe interface, where carriers are effectively generated as a result of deep energy level formations, spatially confined in the interfacial region of the depletion layer width of the Ni-CdSe junction. A potential energy diagram is proposed to present the spatially and energetically confined deep-level parameters, the operation principles (carrier generation and transport processes) across the structure and link them to the obtained I–V response. A mathematical modeling based on the Schokley-Read-Hall recombination theory confirms the experimentally obtained current profiles of illuminated junctions. Such opto-electrical tranducers might be implemented in multilayer photovoltaic hetero-structures to enhance their conversion efficiencies and reduce their operating temperatures. (paper)

Bath atomic composition and deposition time influence on the properties of nanostructured CdS{sub 0.5}Se{sub 0.5} thin films synthesized by CBD

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738 México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: angeleshp@yahoo.com [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738 México D.F. (Mexico); Aguilar-Hernandez, J.R.; Contreras-Puente, G. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738 México D.F. (Mexico)

2015-09-01

Chemical Bath Deposition (CBD) was used to grow CdS{sub 1−xf}Se{sub xf} (x{sub f} = 0.5) thin films on Corning glass substrates at 75 °C. The atomic composition of the bath was varied until an x{sub f} of 0.5 was obtained, maintaining the deposition time at 120 min. Then the deposition time was modified from 5 to 360 min. The structural and optical properties of the films were analyzed by Scanning Electron Microscopy, Energy Dispersive Spectroscopy, X-Ray Diffraction, UV–Vis Spectroscopy, Profilometry and Inductive Coupled Plasma-Optical Emission Spectroscopy (ICP-OES). A bath atomic composition of Cd:S:Se equal to 0.76:0.55:0.45 was employed to obtain a film of x{sub f} = 0.5. The films are constituted by clusters of semispherical nanoparticles (ϕ{sub av} = 15 nm), which are well-arranged in a “nanoworm” structure. The nucleation time of the particles is lower than 5 min. All the films are polycrystalline with hexagonal phase and preferentially orientated on the (002) plane. The crystal size (11–6 nm) and the band gap (2.17–1.99 eV) decrease with the content of Se and remain constant with the deposition time. The composition x{sub f} = 0.5 is achieved at different times to the heterogeneous (60 min) and homogeneous reactions (15 min). The kinetics of deposition and the consumption rate of Se change in a similar way, reaching the stability after 60 min. - Highlights: • CdS{sub 1−x}Se{sub x} ternary alloy thin films with x = 0.5 ± 0.05 can be grown by CBD at 75 °C. • CdS{sub 1−x}Se{sub x} nanocrystals are well arranged in a “worm” structure from 30 min and x ≥ 0.25. • The E{sub g} of (002) oriented hexagonal film is strongly affected by x and crystal size. • Films with x = 0.5 are obtained from 30 min using a Cd:S:Se = 0.76:0.5:0.6 bath ratio. • Consumption rate has the same behavior that growth rate, changing around 60 min.

Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

Science.gov (United States)

Choudhary, Ritika; Chauhan, Rishi Pal

2017-07-01

The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

2017-08-15

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

2015-01-01

In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Weak antilocalization in Cd3As2 thin films.

Science.gov (United States)

Zhao, Bo; Cheng, Peihong; Pan, Haiyang; Zhang, Shuai; Wang, Baigeng; Wang, Guanghou; Xiu, Faxian; Song, Fengqi

2016-03-03

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50 nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

International Nuclear Information System (INIS)

Kumar, Pragati; Agarwal, Avinash; Saxena, Nupur; Singh, Fouran; Gupta, Vinay

2014-01-01

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ a /Γ b ) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Impedance spectroscopy of CdTe thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Weiss, Charlotte; Heisler, Christoph; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Impedance Spectroscopy (IS) is a widely used method to analyze dielectric properties of specimen as a function of frequency. Typically this characterization method delivers an equivalent circuit diagram of the device under examination to describe its electrical properties. Traditionally IS is used in coating evaluation, corrosion monitoring and in electrochemistry. During the last years the method became more important also in the field of electrical characterization of solar cells. In our work we use IS for the electrical characterization of thin film CdTe solar cells. The measurement is done at room temperature without illumination in a frequency domain from 20 Hz to 2 MHz. The samples are measured under variable forward bias. The results match insufficiently with the model of two resistor-capacitor circuits in series which is commonly used to describe the p-n junction and the blocking back contact. For better consistency, other models from the literature are used and discussed. From the results a conclusion is drawn about the properties of the solar cell such as the nature of the p-n junction or the performance of the back contact.

Structural and morphological characterization of CdSe:Mn thin films

Indian Academy of Sciences (India)

Sarika Singh

2017-06-24

Jun 24, 2017 ... The films prepared by CBD are usu- ally composed of closely spaced nanocrystals [9]. The band-gap engineering of films is possible by tailoring the nanocrystellite size, which can be done by varying the deposition parameters. In the present work, we have successfully synthesized nanograins in CdSe and ...

Germanium Doping to Improve Carrier Mobility in CdO Films

Directory of Open Access Journals (Sweden)

A. A. Dakhel

2013-01-01

Full Text Available This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( and mobility ( with Ge-incorporation level. The mobility could be improved to a highest value of  cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as  Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.

Scale-up issues of CIGS thin film PV modules

Energy Technology Data Exchange (ETDEWEB)

Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

2011-01-15

Photovoltaics cost has been declining following a 70% learning curve. Now the challenge is to bring down the cost of solar electricity to make it competitive with conventional sources within the next decade. In the long run, the module efficiencies tend to reach 80% of the champion cell efficiencies. Using a semiempirical methodology, it has been shown earlier that while the triple junction a-Si:H thin film technology is competitive, CIGS and CdTe thin film module technologies are highly competitive and presently offer the best approach for significantly exceeding the cost/performance levels of standard and non-standard crystalline Si PV technologies. Since 2006, the production of thin film solar cell in the U.S. has surpassed that of c-Si. At present, the production of CIGS PV modules lags considerably behind that of CdTe PV modules. This is mainly because of its complexity. Scale-up issues related to various CIGS preparation technologies such as co-evaporation, metallic precursor deposition by magnetron sputtering and non-vacuum techniques such as ink-jet printing, electroplating or doctor-blade technology followed by their selenization/sulfurization are discussed so as to assist the CIGS technology to attain its full potential. Besides the welcome announcements of large volume production, it is essential to achieve the production cost below $1/Wp in the near term and attain production speeds comparable to CdTe production speeds. Comparable production speeds are expected to be achieved within the next decade. This will enable reduction of CIGS module production costs to {proportional_to}65 cents /Wp that would be comparable to the CdTe module projected production cost. Additionally CIGS will have a higher efficiency premium. (author)

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

Science.gov (United States)

Munshi, Amit Harenkumar

CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

A Diffusive Gradient-in-Thin-Film Technique for Evaluation of the Bioavailability of Cd in Soil Contaminated with Cd and Pb

Science.gov (United States)

Wang, Peifang; Wang, Teng; Yao, Yu; Wang, Chao; Liu, Cui; Yuan, Ye

2016-01-01

Management of heavy metal contamination requires accurate information about the distribution of bioavailable fractions, and about exchange between the solid and solution phases. In this study, we employed diffusive gradients in thin-films (DGT) and traditional chemical extraction methods (soil solution, HOAc, EDTA, CaCl2, and NaOAc) to determine the Cd bioavailability in Cd-contaminated soil with the addition of Pb. Two typical terrestrial species (wheat, Bainong AK58; maize, Zhengdan 958) were selected as the accumulation plants. The results showed that the added Pb may enhance the efficiency of Cd phytoextraction which is indicated by the increasing concentration of Cd accumulating in the plant tissues. The DGT-measured Cd concentrations and all the selected traditional extractants measured Cd concentrations all increased with increasing concentration of the addition Pb which were similar to the change trends of the accumulated Cd concentrations in plant tissues. Moreover, the Pearson regression coefficients between the different indicators obtained Cd concentrations and plants uptake Cd concentrations were further indicated significant correlations (p < 0.01). However, the values of Pearson regression coefficients showed the merits of DGT, CaCl2, and Csol over the other three methods. Consequently, the in situ measurement of DGT and the ex situ traditional methods could all reflect the inhibition effects between Cd and Pb. Due to the feature of dynamic measurements of DGT, it could be a robust tool to predict Cd bioavaiability in complex contaminated soil. PMID:27271644

A Diffusive Gradient-in-Thin-Film Technique for Evaluation of the Bioavailability of Cd in Soil Contaminated with Cd and Pb

Directory of Open Access Journals (Sweden)

Peifang Wang

2016-06-01

Full Text Available Management of heavy metal contamination requires accurate information about the distribution of bioavailable fractions, and about exchange between the solid and solution phases. In this study, we employed diffusive gradients in thin-films (DGT and traditional chemical extraction methods (soil solution, HOAc, EDTA, CaCl2, and NaOAc to determine the Cd bioavailability in Cd-contaminated soil with the addition of Pb. Two typical terrestrial species (wheat, Bainong AK58; maize, Zhengdan 958 were selected as the accumulation plants. The results showed that the added Pb may enhance the efficiency of Cd phytoextraction which is indicated by the increasing concentration of Cd accumulating in the plant tissues. The DGT-measured Cd concentrations and all the selected traditional extractants measured Cd concentrations all increased with increasing concentration of the addition Pb which were similar to the change trends of the accumulated Cd concentrations in plant tissues. Moreover, the Pearson regression coefficients between the different indicators obtained Cd concentrations and plants uptake Cd concentrations were further indicated significant correlations (p < 0.01. However, the values of Pearson regression coefficients showed the merits of DGT, CaCl2, and Csol over the other three methods. Consequently, the in situ measurement of DGT and the ex situ traditional methods could all reflect the inhibition effects between Cd and Pb. Due to the feature of dynamic measurements of DGT, it could be a robust tool to predict Cd bioavaiability in complex contaminated soil.

Structural and electrical properties of polycrystalline CdSe thin films, before and after irradiation with 6 MeV accelerated electrons

International Nuclear Information System (INIS)

Ion, L.; Antohe, V.A.; Tazlaoanu, C.; Antohe, S.; Scarlat, F.

2004-01-01

Structural and electrical properties of polycrystalline CdSe thin films irradiated with high-energy electrons are analyzed. The samples were prepared by vacuum deposition of CdSe powder onto optical glass substrate. Their structure and the temperature dependence of the electrical resistance were determined, both before and after irradiation with 6 MeV electrons at fluencies up to 10 16 electrons/cm 2 . There were no measurable changes in the crystalline structure of the films after irradiation. Electrical properties are controlled by the defect level of donor type, possibly a selenium vacancy, with two ionizing states having ionization energies of about 0.40 eV and 0.22 eV, respectively. The major effect of the irradiation is to increase significantly the concentration of these defects. (authors)

Thin Film Microbatteries

International Nuclear Information System (INIS)

Dudney, Nancy J.

2008-01-01

Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Study of Cd Te recrystallization by hydrated-CdCl_2 thermal treatment

International Nuclear Information System (INIS)

Hernandez V, C.; Albor A, M. L.; Galarza G, U.; Aguilar H, J. R.; Gonzalez T, M. A.; Flores M, J. M.; Jimenez O, D.

2017-01-01

Cd Te thin films solar cells are currently produced using a layer sequence of glass/FTO/CdS/Cd Te/metal contact (Cu/Ag), these films are deposited by two different techniques, chemical bath deposition (CBD) and close space vapour transport (CSVT). In order to reach reasonable conversion efficiencies, the device has to be thermally treated in a hydrated-CdCl_2 atmosphere. This study was carried out using X-ray diffraction (XRD), photoluminescence, Sem-EDS, four probe method and Sims profiling of Cd Te. These analyses confirm the presence of hydrated CdCl_2 and Cd Te phases on Cd Te surface and shown a good recrystallization morphology helping to the carriers mobility along the structure. Using the thermal treatment was possible to reduce the resistivity of Cd Te thin film; it is a result to the Cl migration along the Cd Te solar cell structure, reducing the defects between CdS and Cd Te thin films. A strong Cd Te thin film recrystallization was observed by the implementation of a hydrated-CdCl_2 treatment doing to this a good candidate to Cd Te solar cells process. (Author)

Influence of Cd-content on structural and optical dispersion characteristics of nanocrystalline Zn1−xCdxS (0 ⩽ x ⩽ 0.9) films

International Nuclear Information System (INIS)

Farag, A.A.M.; Abdel Rafea, M.; Roushdy, N.; El-Shazly, O.; El-Wahidy, E.F.

2015-01-01

Highlights: • Highly uniform and good adhesion of nanocrystalline Zn 1−x Cd x S films were synthesized. • Small magnitude of optical electronegativity was calculated. • Third-order nonlinear optical susceptibility and molar polarizability were considered. - Abstract: Low cost dip coating technique was successfully used to deposit highly uniform and good adhesive nanocrystalline Zn 1−x Cd x S (0 ⩽ x ⩽ 0.9) thin films. The surface morphology and crystalline structural characteristics of Zn 1−x Cd x S were achieved by using atomic force microscopy (AFM) and transmission electron microscopy (TEM), respectively. Transmission spectra show red shifting of absorption edge as the Cd content increased. The optical constants were accurately determined by using reflectance and transmittance spectra. The effect of Cd-content on refractive index, extinction index and other optical dispersion parameters were also investigated. The dispersion of the refractive index was discussed in terms of single oscillator model. In addition, the ratio of free carrier concentration to its effective mass was estimated. The calculated value of oscillator energy E o obeys the empirical relation (E o ≈ 2 E g ), obtained from single oscillator model. Small magnitude of optical electronegativity (χ ∗ ) for Zn 1−x Cd x S (0 ⩽ x ⩽ 0.9) thin films and relatively high refractive index can be attributed to covalent nature, in agreement with β value, obtained from dispersion energy analysis. Moreover, molar polarizability and third-order nonlinear optical susceptibility were also considered

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com; Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly 243 005, Uttar Pradesh (India); Saxena, Nupur; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

2014-07-28

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ{sub a}/Γ{sub b}) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

Energy Technology Data Exchange (ETDEWEB)

Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

2015-08-15

Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

Dielectric functions and carrier concentrations of Hg{sub 1−x}Cd{sub x}Se films determined by spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Lee, A. J.; Peiris, F. C., E-mail: peirisf@kenyon.edu [Department of Physics, Kenyon College, Gambier, Ohio 43022 (United States); Brill, G.; Doyle, K. [U.S. Army Research Laboratory, Adelphi, Maryland 20783-1197 (United States); Myers, T. H. [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

2015-08-17

Spectroscopic ellipsometry, ranging from 35 meV to 6 eV, was used to determine the dielectric functions of a series of molecular beam epitaxy-grown Hg{sub 1−x}Cd{sub x}Se thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates. The fundamental band gap as well as two higher-order electronic transitions blue-shift with increasing Cd composition in Hg{sub 1−x}Cd{sub x}Se, as expected. Representing the free carrier absorption with a Drude oscillator, we found that the effective masses of Hg{sub 1−x}Cd{sub x}Se (grown on ZnTe/Si) vary between 0.028 and 0.050 times the free electron mass, calculated using the values of carrier concentration and the mobility obtained through Hall measurements. Using these effective masses, we determined the carrier concentrations of Hg{sub 1−x}Cd{sub x}Se samples grown on GaSb, which is of significance as films grown on such doped-substrates posit ambiguous results when measured by conventional Hall experiments. These models can serve as a basis for monitoring Cd-composition during sample growth through in-situ spectroscopic ellipsometry.

Cu/sub x/S-CdS thin film solar cells - aftertreatment and stability. Cu/sub x/S-CdS Duennschicht-Solarzellen - Untersuchungen ueber die Nachbehandlung und die Stabilitaet

Energy Technology Data Exchange (ETDEWEB)

Pfisterer, F

1987-02-19

The performance of Cu/sub x/S-CdS thin film solar cells can be improved significantly by a secondary treatment of the Cu layer. The physical mechanisms underlying the aftertreatment process were investigated both experimentally and theoretically. A historical review is followed by an outline of the technology and theory of these solar cells (material properties, process engineering, photovoltaic properties) and a description of Cu aftertreatment and H glowing (experimental set-up, surface potential shift, electron beam scanning). Capacity measurements in this type of thin film cell are described (space charge profile, electrolytic decomposition, copper depletion between the contact web). Aftertreatment of the copper layer enhances the solar cell efficiency, stability, and productivity, makes the immersion process less tedious, and corrects the stoichiometry. (HWJ).

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

2011-01-01

Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

Study of Cd Te recrystallization by hydrated-CdCl{sub 2} thermal treatment

Energy Technology Data Exchange (ETDEWEB)

Hernandez V, C.; Albor A, M. L.; Galarza G, U.; Aguilar H, J. R. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico); Flores M, J. M. [IPN, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria en Metalurgia y Materiales, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico); Jimenez O, D. [IPN, Escuela Superior de Ingenieria Mecanica y Electrica, SEPI, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico)

2017-11-01

Cd Te thin films solar cells are currently produced using a layer sequence of glass/FTO/CdS/Cd Te/metal contact (Cu/Ag), these films are deposited by two different techniques, chemical bath deposition (CBD) and close space vapour transport (CSVT). In order to reach reasonable conversion efficiencies, the device has to be thermally treated in a hydrated-CdCl{sub 2} atmosphere. This study was carried out using X-ray diffraction (XRD), photoluminescence, Sem-EDS, four probe method and Sims profiling of Cd Te. These analyses confirm the presence of hydrated CdCl{sub 2} and Cd Te phases on Cd Te surface and shown a good recrystallization morphology helping to the carriers mobility along the structure. Using the thermal treatment was possible to reduce the resistivity of Cd Te thin film; it is a result to the Cl migration along the Cd Te solar cell structure, reducing the defects between CdS and Cd Te thin films. A strong Cd Te thin film recrystallization was observed by the implementation of a hydrated-CdCl{sub 2} treatment doing to this a good candidate to Cd Te solar cells process. (Author)

Device design of GaSb/CdS thin film thermal photovoltaic solar cells%基于GaSb/CdS薄膜热光伏电池的器件设计∗

Institute of Scientific and Technical Information of China (English)

吴限量; 张德贤; 蔡宏琨; 周严; 倪牮; 张建军

2015-01-01

基于GaSb薄膜热光伏器件是降低热光伏系统成本的有效途径之一，本文主要针对GaSb/CdS薄膜热光伏器件结构进行理论分析.采用AFORS-HET软件进行模拟仿真，分析GaSb和CdS两种材料各自的缺陷态密度、界面态对电池性能的影响.根据软件模拟可以得知，吸收层GaSb的缺陷态密度以及GaSb与CdS之间的界面态密度是影响电池性能的重要因素.当GaSb缺陷态增加时，主要影响电池的填充因子，电池效率明显下降.而作为窗口层的CdS缺陷态密度对电池性能影响不明显，当CdS缺陷态密度上升4个数量级时，电池效率仅下降0.11%.%Enthusiasm in the research of thermo-photovoltaic (TPV) cells has been aroused because the low bandwidth semi-conductors of III-V family are coming into use. GaSb, as a member of III-V family, has many merits such as high absorption coeffcient, and low band gap of 0.725 eV at 300 K etc.. At present thermo-photovoltaic cells are usually based on GaSb wafer, and it can be manufactured by the vertical Bridgeman method. Thermo-photovoltaic cell based on GaSb films is one of the effective ways to reduce the cost of the thermo-photovoltaic system. GaSb polycrystalline films can be grown by physical vapor deposition (PVD) which has advantages in using fewer materials and energy, and also in doing little harm to the environment. Because of residual acceptor defects VGaGaSb, GaSb thin film is usually of p-type semiconductor. So we should find n-type semiconductor material to form pn junction. We choose CdS as the emission layer of a cell structure. CdS belongs to n-type semiconductor with a narrow band gap of 2.4 eV and high light transmissivity. CdS thin film grown by chemical bath deposition (CBD) has passivation properties for GaSb. CdS layers can remove native oxides from GaSb surface and reduce the surface recombination velocity of GaSb. This paper focuses on theoretical analysis of GaSb/CdS thin film photovoltaic

Cathodic deposition of CdSe films from dimethyl formamide solution at optimized temperature

Energy Technology Data Exchange (ETDEWEB)

Datta, J. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India)]. E-mail: jayati_datta@rediffmail.com; Bhattacharya, C. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India); Visiting Research Associate, School of Materials Science and Engineering, UNSW (Australia); Bandyopadhyay, S. [School of Materials Science and Engineering, UNSW, Sydney 2052 (Australia)

2006-12-15

In the present paper, thin film CdSe compound semiconductors have been electroplated on transparent conducting oxide coated glass substrates from nonaqueous dimethyl formamide bath containing CdCl{sub 2}, KI and Se under controlled temperature ranging from 100 to 140 deg. C. Thickness of the deposited films as obtained through focussed ion beam technique as well as their microstructural and photoelectrochemical properties have been found to depend on temperature. The film growth was therefore optimized at a bath temperature {approx}125 deg. C. The formation of crystallites in the range of 100-150 nm size has been ascertained through atomic force microscopy and scanning electron microscopy. Energy dispersive analysis of X-rays for the as deposited film confirmed the 1:1 composition of CdSe compound in the matrix exhibiting band-gap energy of 1.74 eV. Microstructural properties of the deposited films have been determined through X-ray diffraction studies, high-resolution transmission electron microscopy and electron diffraction pattern analysis. Electrochemical impedance spectroscopy and current-potential measurements have been performed to characterize the electrochemical behavior of the semiconductor-electrolyte interface. The photo-activity of the films have been recorded in polysulphide solution under illumination and solar conversion efficiency {>=}1% was achieved.

CdS thin films prepared by continuous wave Nd:YAG laser

Science.gov (United States)

Wang, H.; Tenpas, Eric W.; Vuong, Khanh D.; Williams, James A.; Schuesselbauer, E.; Bernstein, R.; Fagan, J. G.; Wang, Xing W.

1995-08-01

We report new results on continuous wave Nd:YAG laser deposition of cadmium sulfide thin films. Substrates were soda-lime silicate glass, silica glass, silicon, and copper coated formvar sheets. As deposited films were mixtures of cubic and hexagonal phases, with two different grain sizes. As revealed by SEM micrographs, films had smooth surface morphology. As revealed by TEM analysis, grain sizes were extremely small.

Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

International Nuclear Information System (INIS)

Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

2004-01-01

Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thin film solar cell technology in Germany

International Nuclear Information System (INIS)

Diehl, W.; Sittinger, V.; Szyszka, B.

2005-01-01

Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

Thermally stimulated current analysis of Zn{sub 1-x}Cd{sub x}O alloy films

Energy Technology Data Exchange (ETDEWEB)

Aybek, A. Senol, E-mail: saybek@anadolu.edu.tr [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey); Baysal, Nihal [Kilicoglu Anadolu High School, Eskisehir 26050 (Turkey); Zor, Muhsin; Turan, Evren; Kul, Metin [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey)

2011-02-03

Research highlights: > We have studied the structural and electrical properties of Zn{sub 1-x}Cd{sub x}O alloy films deposited by ultrasonic spray pyrolysis technique. > The trap energy, the capture cross-section, the attempt-to-escape frequency and the concentration of the traps in Zn{sub 1-x}Cd{sub x}O films are reported. > The effect of the Cd incorporation into ZnO material on trapping levels was investigated by the TSC measurements. Two overlapped peaks were registered at levels of 0.033 and 0.197 eV in ZnO sample by the curve fitting technique. The observed trap energy levels for ZnO film is thought to originate from zinc interstitials and oxygen vacancies. However, the incorporation of Cd into Zn{sub 1-x}Cd{sub x}O alloy films with x = 0.59 have resulted in two trapping centers with activation energies of 0.118 and 0.215 eV. The observed trap levels in Zn{sub 0.41}Cd{sub 0.59}O alloy film are related to oxygen adsorption in the sample. - Abstract: We have studied the structural and electrical properties of Zn{sub 1-x}Cd{sub x}O alloy films deposited by ultrasonic spray pyrolysis technique. XRD measurement indicated that pure ZnO and CdO samples had single phases with hexagonal wurtzite and cubic structures, respectively. However, Zn{sub 1-x}Cd{sub x}O alloy films with x = 0.59 and 0.78 exhibited mixtures of a hexagonal wurtzite ZnO phase and a cubic CdO phase. Analysis of thermally stimulated current spectra of Zn{sub 1-x}Cd{sub x}O alloy films revealed the existence of a number of overlapped peaks each characterized by different trap energy levels located in the range of 0.033-0.215 eV below the conduction band. We have used curve fitting method for the evaluation of the trap parameters of the alloy films. The values of attempt-to-escape frequency {nu}, capture cross-section S and concentration of the traps N{sub t} have been determined.

Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

Science.gov (United States)

Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

2011-10-01

We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

Energy efficiency of a photovoltaic cell based thin films CZTS by ...

African Journals Online (AJOL)

Energy efficiency of a photovoltaic cell based thin films CZTS by SCAPS. ... use of natural resources, the use of renewable energy including solar photovoltaic ... η for typical structures of ZnO / i- ZnO / CdS / CZTS and ITO / ZnO / CdS / CZTS.

Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

International Nuclear Information System (INIS)

Li, Wanjun; Qin, Guoping; Fang, Liang; Ye, Lijuan; Wu, Fang; Ruan, Haibo; Zhang, Hong; Kong, Chunyang; Zhang, Ping

2015-01-01

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn i ) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm −1 . We first report that 275 cm −1 mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm −1 mode is attributed to Zn i related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn i related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm −1 and also the natural n-type conductivity in ZnO

Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

Energy Technology Data Exchange (ETDEWEB)

Li, Wanjun; Qin, Guoping [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Ye, Lijuan; Wu, Fang [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Ruan, Haibo [Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhang, Hong; Kong, Chunyang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Zhang, Ping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China)

2015-04-14

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn{sub i}) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm{sup −1}. We first report that 275 cm{sup −1} mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm{sup −1} mode is attributed to Zn{sub i} related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn{sub i} related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm{sup −1} and also the natural n-type conductivity in ZnO.