Radiation resistance of paralytic shellfish poison (PSP) toxins

Energy Technology Data Exchange (ETDEWEB)

San Juan, Edith M

2000-04-01

Radiation resistance of paralytic shellfish poison (PSP) toxins, obtained from Pyrodinium bahamense var. compressum in shellstocks of green mussels, was determined by subjecting the semi-purified toxin extract as well as the shellstocks of green mussels to high doses of ionizing radiation of 5, 10, 15 and 20 kGy. The concentration of the PSP toxins was determined by the Standard Mouse Bioassay (SMB) method. The radiation assistance of the toxins was determined by plotting the PSP toxin concentration versus applied dose in a semilog paper. The D{sub 10} value or decimal reduction dose was obtained from the straight line which is the dose required to reduce the toxicity level by 90%. The effects of irradiation on the quality of green mussels in terms of its physico-chemical, microbiological and sensory attributes were also conducted. The effect of irradiation on the fatty acid components of green mussels was determined by gas chromatography. Radiation resistance of the PSP toxins was determined to be lower in samples with initially high toxicity level as compared with samples with initially low toxicity level. The D{sub 10} values of samples with initially high PSP level were 28.5 kGy in shellstocks of green musssels and 17.5 kGy in the semi-purified toxin extract. When the PSP level was low initially, the D{sub 10} values were as high as 57.5 and 43.5 kGy in shellstocks of green mussels for the two trials, and 43.0 kGy in semi-purified toxin extract. The microbial load of the irradiated mussels was remarkably reduced. No differnce in color and odor characteristics were observed in the mussel samples subjected to varying doses of ionizing radiation. There was darkening in the color of mussel meat and its juice. The concentration of the fatty acid components in the fresh green mussels were considerably higher as compared with those present in the irradiated mussels, though some volatile fatty acids were detected as a result of irradiation. (Author)

Radiation resistance of paralytic shellfish poison (PSP) toxins

International Nuclear Information System (INIS)

San Juan, Edith M.

2000-04-01

Radiation resistance of paralytic shellfish poison (PSP) toxins, obtained from Pyrodinium bahamense var. compressum in shellstocks of green mussels, was determined by subjecting the semi-purified toxin extract as well as the shellstocks of green mussels to high doses of ionizing radiation of 5, 10, 15 and 20 kGy. The concentration of the PSP toxins was determined by the Standard Mouse Bioassay (SMB) method. The radiation assistance of the toxins was determined by plotting the PSP toxin concentration versus applied dose in a semilog paper. The D 10 value or decimal reduction dose was obtained from the straight line which is the dose required to reduce the toxicity level by 90%. The effects of irradiation on the quality of green mussels in terms of its physico-chemical, microbiological and sensory attributes were also conducted. The effect of irradiation on the fatty acid components of green mussels was determined by gas chromatography. Radiation resistance of the PSP toxins was determined to be lower in samples with initially high toxicity level as compared with samples with initially low toxicity level. The D 10 values of samples with initially high PSP level were 28.5 kGy in shellstocks of green musssels and 17.5 kGy in the semi-purified toxin extract. When the PSP level was low initially, the D 10 values were as high as 57.5 and 43.5 kGy in shellstocks of green mussels for the two trials, and 43.0 kGy in semi-purified toxin extract. The microbial load of the irradiated mussels was remarkably reduced. No differnce in color and odor characteristics were observed in the mussel samples subjected to varying doses of ionizing radiation. There was darkening in the color of mussel meat and its juice. The concentration of the fatty acid components in the fresh green mussels were considerably higher as compared with those present in the irradiated mussels, though some volatile fatty acids were detected as a result of irradiation. (Author)

Photon detection with CMOS sensors for fast imaging

International Nuclear Information System (INIS)

Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

2009-01-01

Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

Paralytic Shellfish Poisoning (PSP in Margarita Island, Venezuela

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Amelia La Barbera-Sánchez

2004-09-01

Full Text Available A severe outbreak of Paralytic Shellfish Poisoning (PSP occurred in Manzanillo and Guayacán, northwestern coast of Margarita Island, Venezuela, between August and October 1991. A bloom of dinoflagellates including Prorocentrum gracile, Gymnodinium catenatum and Alexandrium tamarense seemed to be responsible for this outbreak. Levels of PSP toxins in mussels (Perna perna exceeded the international safety limit of saxitoxin, 80 µg STX/100 g meat. PSP toxin values varied between 2 548 and 115 µg STX/100 g meat in Manzanillo, and between 1 422 and 86 µg STX/100 g meat in Guayacán. At both locations, the highest levels were detected in August, when 24 patients exhibited typical symptoms of PSP toxicity after consuming cooked mussels (16 required hospitalization. A high pressure liquid chromatographic (HPLC procedure was recently used on the 1991 samples. The major toxin detected in samples of both locations was decarbamoyl saxitoxin (dcSTX, but low concentrations of saxitoxin were also found in Manzanillo samples. Gonyautoxins GTX1, GTX2 and GTX3 were detected only at Guayacán, while in both locations, decarbamoylgonyatouxin (dcGTX2,3 toxins were detected. These findings represent the first time that causative toxins of PSP in Venezuela have been chemically identified, and confirm the presence of dcSTX and dcGTX in mussels from the Caribbean Sea. The presence of dcSTX and dcGTX in shellfish is indicative that Gymnodinium catenatum was a causative organism for outbreak of PSPUn severo brote de intoxicación paralizante por moluscos (PSP en inglés ocurrió en Manzanillo y Guayacán en la costa noroeste de la Isla de Margarita, Venezuela entre agosto y octubre de 1991. Una proliferación de Prorocentrum gracile, Gymnodinium catenatum y Alexandrium tamarense causó el brote. Los niveles de PSP en mejillón (Perna perna superaron los niveles máximos permisibles de saxitoxina, 80 µg STX/100g carne. Los niveles de toxinas variaron entre 2 548 y 115

CMOS cassette for digital upgrade of film-based mammography systems

Science.gov (United States)

Baysal, Mehmet A.; Toker, Emre

2006-03-01

While full-field digital mammography (FFDM) technology is gaining clinical acceptance, the overwhelming majority (96%) of the installed base of mammography systems are conventional film-screen (FSM) systems. A high performance, and economical digital cassette based product to conveniently upgrade FSM systems to FFDM would accelerate the adoption of FFDM, and make the clinical and technical advantages of FFDM available to a larger population of women. The planned FFDM cassette is based on our commercial Digital Radiography (DR) cassette for 10 cm x 10 cm field-of-view spot imaging and specimen radiography, utilizing a 150 micron columnar CsI(Tl) scintillator and 48 micron active-pixel CMOS sensor modules. Unlike a Computer Radiography (CR) cassette, which requires an external digitizer, our DR cassette transfers acquired images to a display workstation within approximately 5 seconds of exposure, greatly enhancing patient flow. We will present the physical performance of our prototype system against other FFDM systems in clinical use today, using established objective criteria such as the Modulation Transfer Function (MTF), Detective Quantum Efficiency (DQE), and subjective criteria, such as a contrast-detail (CD-MAM) observer performance study. Driven by the strong demand from the computer industry, CMOS technology is one of the lowest cost, and the most readily accessible technologies available for FFDM today. Recent popular use of CMOS imagers in high-end consumer cameras have also resulted in significant advances in the imaging performance of CMOS sensors against rivaling CCD sensors. This study promises to take advantage of these unique features to develop the first CMOS based FFDM upgrade cassette.

The Disturbance of Gaze in Progressive Supranuclear Palsy (PSP: Implications for Pathogenesis

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Athena L Chen

2010-12-01

Full Text Available Progressive supranuclear palsy (PSP is a disease of later life that is currently regarded as a form of neurodegenerative tauopathy. Disturbance of gaze is a cardinal clinical feature of PSP that often helps clinicians to establish the diagnosis. Since the neurobiology of gaze control is now well understood, it is possible to use eye movements as investigational tools to understand aspects of the pathogenesis of PSP. In this review, we summarize each disorder of gaze control that occurs in PSP, drawing on our studies of fifty patients, and on reports from other laboratories that have measured the disturbances of eye movements. When these gaze disorders are approached by considering each functional class of eye movements and its neurobiological basis, a distinct pattern of eye movement deficits emerges that provides insight into the pathogenesis of PSP. Although some aspects of all forms of eye movements are affected in PSP, the predominant defects concern vertical saccades (slow and hypometric, both up and down, impaired vergence, and inability to modulate the linear vestibulo-ocular reflex appropriately for viewing distance. These vertical and vergence eye movements habitually work in concert to enable visuomotor skills that are important during locomotion with the hands free. Taken with the prominent early feature of falls, these findings suggest that PSP tauopathy impairs a recently-evolved neural system concerned with bipedal locomotion in an erect posture and frequent gaze shifts between the distant environment and proximate hands. This approach provides a conceptual framework that can be used to address the nosological challenge posed by overlapping clinical and neuropathological features of neurodegenerative tauopathies.

Streptococcus pneumoniae PspC Subgroup Prevalence in Invasive Disease and Differences in Contribution to Complement Evasion.

Science.gov (United States)

van der Maten, Erika; van den Broek, Bryan; de Jonge, Marien I; Rensen, Kim J W; Eleveld, Marc J; Zomer, Aldert L; Cremers, Amelieke J H; Ferwerda, Gerben; de Groot, Ronald; Langereis, Jeroen D; van der Flier, Michiel

2018-04-01

The pneumococcal capsular serotype is an important determinant of complement resistance and invasive disease potential, but other virulence factors have also been found to contribute. Pneumococcal surface protein C (PspC), a highly variable virulence protein that binds complement factor H to evade C3 opsonization, is divided into two subgroups: choline-bound subgroup I and LPxTG-anchored subgroup II. The prevalence of different PspC subgroups in invasive pneumococcal disease (IPD) and functional differences in complement evasion are unknown. The prevalence of PspC subgroups in IPD isolates was determined in a collection of 349 sequenced strains of Streptococcus pneumoniae isolated from adult patients. pspC deletion mutants and isogenic pspC switch mutants were constructed to study differences in factor H binding and complement evasion in relation to capsule thickness. Subgroup I pspC was far more prevalent in IPD isolates than subgroup II pspC The presence of capsule was associated with a greater ability of bound factor H to reduce complement opsonization. Pneumococcal subgroup I PspC bound significantly more factor H and showed more effective complement evasion than subgroup II PspC in isogenic encapsulated pneumococci. We conclude that variation in the PspC subgroups, independent of capsule serotypes, affects pneumococcal factor H binding and its ability to evade complement deposition. Copyright © 2018 American Society for Microbiology.

A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

Science.gov (United States)

Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

2017-02-01

This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

Familias de la proteína de superficie PspA de Streptococcus pneumoniae: Relación con serotipos y localización Pneumococcal surface protein A (PspA families: Relation with serotypes and clinical site of infection

Directory of Open Access Journals (Sweden)

Clara Mayoral

2010-10-01

Full Text Available PspA, proteína de superficie de Streptococcus pneumoniae es un factor de virulencia, fuertemente inmunogénica y común a todos los serotipos. Aunque el gen que codifica para esta proteína presenta una marcada heterogeneidad en la región correspondiente al N-terminal, la PspA contiene epitopes conservados de manera tal que la inmunización genera protección contra neumococos pertenecientes a diversos tipos capsulares y con distintas PspA. A pesar del marcado polimorfismo del gen pspA es posible agrupar las distintas variantes en 3 familias mayoritarias. Estas propiedades las convierten en candidatas ideales para elaborar vacunas. Debido a que la mayoría de los trabajos sobre identificación de familias fueron realizados sobre serotipos frecuentes en otros países, el objetivo fue identificar las familias de PspA de aislamientos de pacientes de nuestra región y relacionarlas con los serotipos prevalentes y patologías. Se estudiaron 70 aislamientos, provenientes de niños con infecciones invasoras. Se aplicó una PCR utilizando cebadores específicos de cada familia. El 60% fueron familia 1 y 34% familia 2. En un 6% no se identificó ninguna de las familias de PspA. Los serotipos 1 y 5 presentaron familia 1 únicamente; los serotipos 14, 6B, 19F y 18C mostraron genes de ambas familias. La familia 1 se observó en 60% de las neumonías y 50% de las meningitis. La familia 2 en 33% de neumonías y 50% de meningitis. Esta información podría ser un valioso aporte para la formulación de una vacuna regional efectiva utilizando PspA recombinante como inmunógeno.PspA, a pneumococcal surface protein, is highly immunogenic and common to all serotypes. Although pspA gene shows a great heterogeneity at the N-terminal region, PspA protein has conserved epytopes which are able to elicit protective cross-reaction against various serotypes presenting different PspA. In spite of the high polimorfism of the PspA, three majority families can be identified

Room Temperature Stable PspA-Based Nanovaccine Induces Protective Immunity

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Danielle A. Wagner-Muñiz

2018-03-01

Full Text Available Streptococcus pneumoniae is a major causative agent of pneumonia, a debilitating disease particularly in young and elderly populations, and is the leading worldwide cause of death in children under the age of five. While there are existing vaccines against S. pneumoniae, none are protective across all serotypes. Pneumococcal surface protein A (PspA, a key virulence factor of S. pneumoniae, is an antigen that may be incorporated into future vaccines to address the immunological challenges presented by the diversity of capsular antigens. PspA has been shown to be immunogenic and capable of initiating a humoral immune response that is reactive across approximately 94% of pneumococcal strains. Biodegradable polyanhydrides have been studied as a nanoparticle-based vaccine (i.e., nanovaccine platform to stabilize labile proteins, to provide adjuvanticity, and enhance patient compliance by providing protective immunity in a single dose. In this study, we designed a room temperature stable PspA-based polyanhydride nanovaccine that eliminated the need for a free protein component (i.e., 100% encapsulated within the nanoparticles. Mice were immunized once with the lead nanovaccine and upon challenge, presented significantly higher survival rates than animals immunized with soluble protein alone, even with a 25-fold reduction in protein dose. This lead nanovaccine formulation performed similarly to protein adjuvanted with Alum, however, with much less tissue reactogenicity at the site of immunization. By eliminating the free PspA from the nanovaccine formulation, the lead nanovaccine was efficacious after being stored dry for 60 days at room temperature, breaking the need for maintaining the cold chain. Altogether, this study demonstrated that a single dose PspA-based nanovaccine against S. pneumoniae induced protective immunity and provided thermal stability when stored at room temperature for at least 60 days.

Removal of the phage-shock protein PspB causes reduction of virulence in Salmonella enterica serovar Typhimurium independently of NRAMP1.

Science.gov (United States)

Wallrodt, Inke; Jelsbak, Lotte; Thomsen, Line E; Brix, Lena; Lemire, Sébastien; Gautier, Laurent; Nielsen, Dennis S; Jovanovic, Goran; Buck, Martin; Olsen, John E

2014-06-01

The phage-shock protein (Psp) system is believed to manage membrane stress in all Enterobacteriaceae and has recently emerged as being important for virulence in several pathogenic species of this phylum. The core of the Psp system consists of the pspA-D operon and the distantly located pspG gene. In Salmonella enterica serovar Typhimurium (S. Typhimurium), it has recently been reported that PspA is essential for systemic infection of mice, but only in NRAMP1(+) mice, signifying that attenuation is related to coping with divalent cation starvation in the intracellular environment. In the present study, we investigated the contribution of individual psp genes to virulence of S. Typhimurium. Interestingly, deletion of the whole pspA-D set of genes caused attenuation in both NRAMP1(+) and NRAMP1(-) mice, indicating that one or more of the psp genes contribute to virulence independently of NRAMP1 expression in the host. Investigations of single gene mutants showed that knock out of pspB reduced virulence in both types of mice, while deletion of pspA only caused attenuation in NRAMP1(+) mice, and deletion of pspD had a minor effect in NRAMP1(-) mice, while deletions of either pspC or pspG did not affect virulence. Experiments addressed at elucidating the role of PspB in virulence revealed that PspB is dispensable for uptake to and intracellular replication in cultured macrophages and resistance to complement-induced killing. Furthermore, the Psp system of S. Typhimurium was dispensable during pIV-induced secretin stress. In conclusion, our results demonstrate that removal of PspB reduces virulence in S. Typhimurium independently of host NRAMP1 expression, demonstrating that PspB has roles in intra-host survival distinct from the reported contributions of PspA. © 2014 The Authors.

Sustaining private sector participation (PSP) in solid waste management in Lagos, Nigeria, a developing country

Energy Technology Data Exchange (ETDEWEB)

Adebola, G. [Richbol Environmental Services Ltd., Lagos (Nigeria)

2000-07-01

Solid waste management in Lagos, Nigeria includes refuse collection and transportation to a landfill site. Disposal of the refuse and maintenance of the landfill site is also included in this task which, in the past was always a responsibility of the Government Agencies at the local level as a social service. This service has recently been privatised in the name of Private Sector Participation (PSP) in domestic refuse collection and disposal. As a new operator in about 23 wards in the ongoing PSP of domestic refuse, Richbol Environmental Ltd., recognized the enormous effort that government will have to make to sustain PSP in solid waste management. Governments can maintain control through re-orientation, legislation, enforcement, strengthening the PSP operators, integrating existing operators, and monitoring the activities of PSP operators. This paper presented a brief overview of the institutional changes that solid waste management has undergone in Lagos since 1977. It was emphasized that integrated waste management is extremely capital intensive. An integrated PSP can be a long term solution to waste management in developing, cash poor countries. The economic importance of PSP lies in the fact that it will reduce government expenditure and will also create a healthier environment and provide employment opportunities for thousands of employees and contribute to the gross domestic product of the country. 5 refs., 3 tabs., 1 fig.

75 FR 29324 - Preferred Supplier Program (PSP)

Science.gov (United States)

2010-05-25

..., DON will use a 5-star system based upon the 5-color ratings used in CPARS, as follows: CPARS PSP Red 0... contractors with the greatest motivation to achieve PSS? 3. Energy Efficiency is a critical DON requirement...

Membrane Stored Curvature Elastic Stress Modulates Recruitment of Maintenance Proteins PspA and Vipp1.

Science.gov (United States)

McDonald, Christopher; Jovanovic, Goran; Ces, Oscar; Buck, Martin

2015-09-01

Phage shock protein A (PspA), which is responsible for maintaining inner membrane integrity under stress in enterobacteria, and vesicle-inducting protein in plastids 1 (Vipp1), which functions for membrane maintenance and thylakoid biogenesis in cyanobacteria and plants, are similar peripheral membrane-binding proteins. Their homologous N-terminal amphipathic helices are required for membrane binding; however, the membrane features recognized and required for expressing their functionalities have remained largely uncharacterized. Rigorously controlled, in vitro methodologies with lipid vesicles and purified proteins were used in this study and provided the first biochemical and biophysical characterizations of membrane binding by PspA and Vipp1. Both proteins are found to sense stored curvature elastic (SCE) stress and anionic lipids within the membrane. PspA has an enhanced sensitivity for SCE stress and a higher affinity for the membrane than Vipp1. These variations in binding may be crucial for some of the proteins' differing roles in vivo. Assays probing the transcriptional regulatory function of PspA in the presence of vesicles showed that a relief of transcription inhibition occurs in an SCE stress-specific manner. This in vitro recapitulation of membrane stress-dependent transcription control suggests that the Psp response may be mounted in vivo when a cell's inner membrane experiences increased SCE stress. All cell types maintain the integrity of their membrane systems. One widely distributed membrane stress response system in bacteria is the phage shock protein (Psp) system. The central component, peripheral membrane protein PspA, which mitigates inner membrane stress in bacteria, has a counterpart, Vipp1, which functions for membrane maintenance and thylakoid biogenesis in plants and photosynthetic bacteria. Membrane association of both these proteins is accepted as playing a pivotal role in their functions. Here we show that direct membrane binding by

Single-photon sensitive fast ebCMOS camera system for multiple-target tracking of single fluorophores: application to nano-biophotonics

Science.gov (United States)

Cajgfinger, Thomas; Chabanat, Eric; Dominjon, Agnes; Doan, Quang T.; Guerin, Cyrille; Houles, Julien; Barbier, Remi

2011-03-01

Nano-biophotonics applications will benefit from new fluorescent microscopy methods based essentially on super-resolution techniques (beyond the diffraction limit) on large biological structures (membranes) with fast frame rate (1000 Hz). This trend tends to push the photon detectors to the single-photon counting regime and the camera acquisition system to real time dynamic multiple-target tracing. The LUSIPHER prototype presented in this paper aims to give a different approach than those of Electron Multiplied CCD (EMCCD) technology and try to answer to the stringent demands of the new nano-biophotonics imaging techniques. The electron bombarded CMOS (ebCMOS) device has the potential to respond to this challenge, thanks to the linear gain of the accelerating high voltage of the photo-cathode, to the possible ultra fast frame rate of CMOS sensors and to the single-photon sensitivity. We produced a camera system based on a 640 kPixels ebCMOS with its acquisition system. The proof of concept for single-photon based tracking for multiple single-emitters is the main result of this paper.

Removal of the phage-shock protein PspB causes reduction of virulence in Salmonella enterica serovar Typhimurium independently of NRAMP1

DEFF Research Database (Denmark)

Wallrodt, Inke; Jelsbak, Lotte; Thomsen, Line E.

2014-01-01

The phage-shock protein (Psp) system is believed to manage membrane stress in all Enterobacteriaceae and has recently emerged as being important for virulence in several pathogenic species of this phylum. The core of the Psp system consists of the pspA-D operon and the distantly located pspG gene......IV-induced secretin stress. In conclusion, our results demonstrate that removal of PspB reduces virulence in S. Typhimurium independently of host NRAMP1 expression, demonstrating that PspB has roles in intra-host survival distinct from the reported contributions of PspA....

A new and efficient transient noise analysis technique for simulation of CCD image sensors or particle detectors

International Nuclear Information System (INIS)

Bolcato, P.; Jarron, P.; Poujois, R.

1993-01-01

CCD image sensors or switched capacitor circuits used for particle detectors have a certain noise level affecting the resolution of the detector. A new noise simulation technique for these devices is presented that has been implemented in the circuit simulator ELDO. The approach is particularly useful for noise simulation in analog sampling circuits. Comparison between simulations and experimental results has been made and is shown for a 1.5 μ CMOS current mode amplifier designed for high-rate particle detectors. (R.P.) 5 refs., 7 figs

Postural imbalance and falls in PSP correlate with functional pathology of the thalamus.

Science.gov (United States)

Zwergal, A; la Fougère, C; Lorenzl, S; Rominger, A; Xiong, G; Deutschenbaur, L; Linn, J; Krafczyk, S; Dieterich, M; Brandt, T; Strupp, M; Bartenstein, P; Jahn, K

2011-07-12

To determine how postural imbalance and falls are related to regional cerebral glucose metabolism (PET) and functional activation of the cerebral postural network (fMRI) in patients with progressive supranuclear palsy (PSP). Sixteen patients with PSP, who had self-monitored their frequency of falls, underwent a standardized clinical assessment, posturographic measurement of balance during modified sensory input, and a resting [¹⁸F]FDG-PET. In addition, patients performed an fMRI paradigm using mental imagery of standing. Results were compared to healthy controls (n = 16). The frequency of falls/month in patients (range 1-40) correlated with total PSP rating score (r = 0.90). Total sway path in PSP significantly correlated with frequency of falls, especially during modulated sensory input (eyes open: r = 0.62, eyes closed: r = 0.67, eyes open/head extended: r = 0.84, eyes open/foam-padded platform: r = 0.87). Higher sway path values and frequency of falls were associated with decreased regional glucose metabolism (rCGM) in the thalamus (sway path: r = -0.80, falls: r = -0.64) and increased rCGM in the precentral gyrus (sway path: r = 0.79, falls: r = 0.64). Mental imagery of standing during fMRI revealed a reduced activation of the mesencephalic brainstem tegmentum and the thalamus in patients with postural imbalance and falls. The new and clinically relevant finding of this study is that imbalance and falls in PSP are closely associated with thalamic dysfunction. Deficits in thalamic postural control get most evident when balance is assessed during modified sensory input. The results are consistent with the hypothesis that reduced thalamic activation via the ascending brainstem projections may cause postural imbalance in PSP.

CMOS circuits manual

CERN Document Server

Marston, R M

1995-01-01

CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

Detection of pregnancy by radioimmunoassay of a pregnancy serum protein (PSP60) in cattle

International Nuclear Information System (INIS)

Mialon, M.M.; Renand, G.; Camous, S.; Martal, J.; Menissier, F.

1994-01-01

The accuracy and efficiency of pregnancy diagnoses in cattle by pregnancy serum protein (PSP60) radioimmunoassay, a progesterone radioimmunoassay or oestrus detection were compared. Blood samples were taken from 349 suckling heifers and cows ( 1 191 inseminations) at 28, 35, 50 and 90 d post-insemination for PSP60 determination and at 22-23 d for progesterone. Females were declared nonpregnant when plasma PSP60 concentration was lower than 0.2 ng/ml at 28, 35 and 50 d and 0.5 ng/ml at 90 d. When compared with rectal palpation at 90 d, the accuracy of positive (negative) diagnoses by progesterone assay was 80% (100%) in heifers and 75% (99%) in cows. The accuracy of positive diagnoses by PSP60 assay increased with gestation stage from 90% on d 28 in heifers (74% in cows) to 100% (99% in cows) at the time of rectal palpation. This accuracy was 84% on d 28 in cows when the interval from calving to blood sampling was higher than 115 d. Whatever the stage, the accuracy of negative diagnoses was higher than 90%. Efficiency in detecting pregnant or nonpregnant females on d 28 was equivalent to the progesterone assay. The method for detecting oestrus applied in this experiment was as efficient as the PSP60 or progesterone test at any stage of gestation. The PSP60 test is very flexible, which makes its use particularly interesting in naturally mated suckling herds because of the uncertainty regarding the date of fertilization. (authors)

Comparison of a CCD and an APS for soft X-ray diffraction

International Nuclear Information System (INIS)

Stewart, Graeme; Bates, R; Blue, A; Maneuski, D; Clark, A; Turchetta, R; Dhesi, S S; Marchal, J; Steadman, P; Tartoni, N

2011-01-01

We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost. The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 μm on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS. In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects. The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.

Comparison of a CCD and an APS for soft X-ray diffraction

Science.gov (United States)

Stewart, Graeme; Bates, R.; Blue, A.; Clark, A.; Dhesi, S. S.; Maneuski, D.; Marchal, J.; Steadman, P.; Tartoni, N.; Turchetta, R.

2011-12-01

We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost. The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 μm on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS. In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects. The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.

Diagnostic Accuracy of Charge-coupled Device Sensor and Photostimulable Phosphor Plate Receptor in the Detection of External Root Resorption In Vitro

Directory of Open Access Journals (Sweden)

Shirin Sakhdari

2015-03-01

Full Text Available Background and aims. Early diagnosis of external root resorption is important for accurate treatment. The purpose of this study was to compare the efficacy of a charge-coupled device (CCD sensor and a photostimulable phosphor (PSP plate receptor in the diagnosis of artificial external root resorption. Materials and methods. In this diagnostic in-vitro study, 40 maxillary incisors were mounted in a segment of dry bone and preliminary radiographs were obtained using CCD and PSP sensors. Artificial resorption cavities were produced on the middle-third in half of the samples and on the cervical-third in the other half on the buccal root surfaces. Radiographs were repeated and images were evaluated. Data were statistically analyzed using chi-square and diagnostic tests. Results. There were no significant differences between the two sensors in the sensitivity (p=0.08 and 0.06 and specificity (p=0.13 for the diagnosis of resorption in both root areas. The overall accuracy of CCD was higher than PSP sensor; how-ever, the difference was not statistically significance (p>0.05. Conclusion. CCD and PSP sensors chosen for the present study produced similar results in diagnosing simulated external root resorption.

Radiation damage of the PCO Pixelfly VGA CCD camera of the BES system on KSTAR tokamak

Energy Technology Data Exchange (ETDEWEB)

Náfrádi, Gábor, E-mail: nafradi@reak.bme.hu [NTI, BME, EURATOM Association, H-1111 Budapest (Hungary); Kovácsik, Ákos, E-mail: kovacsik.akos@reak.bme.hu [NTI, BME, EURATOM Association, H-1111 Budapest (Hungary); Pór, Gábor, E-mail: por@reak.bme.hu [NTI, BME, EURATOM Association, H-1111 Budapest (Hungary); Lampert, Máté, E-mail: lampert.mate@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary); Un Nam, Yong, E-mail: yunam@nfri.re.kr [NFRI, 169-148 Gwahak-Ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Zoletnik, Sándor, E-mail: zoletnik.sandor@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary)

2015-01-11

A PCO Pixelfly VGA CCD camera which is part a of the Beam Emission Spectroscopy (BES) diagnostic system of the Korea Superconducting Tokamak Advanced Research (KSTAR) used for spatial calibrations, suffered from serious radiation damage, white pixel defects have been generated in it. The main goal of this work was to identify the origin of the radiation damage and to give solutions to avoid it. Monte Carlo N-Particle eXtended (MCNPX) model was built using Monte Carlo Modeling Interface Program (MCAM) and calculations were carried out to predict the neutron and gamma-ray fields in the camera position. Besides the MCNPX calculations pure gamma-ray irradiations of the CCD camera were carried out in the Training Reactor of BME. Before, during and after the irradiations numerous frames were taken with the camera with 5 s long exposure times. The evaluation of these frames showed that with the applied high gamma-ray dose (1.7 Gy) and dose rate levels (up to 2 Gy/h) the number of the white pixels did not increase. We have found that the origin of the white pixel generation was the neutron-induced thermal hopping of the electrons which means that in the future only neutron shielding is necessary around the CCD camera. Another solution could be to replace the CCD camera with a more radiation tolerant one for example with a suitable CMOS camera or apply both solutions simultaneously.

Data-Acquisition Software for PSP/TSP Wind-Tunnel Cameras

Science.gov (United States)

Amer, Tahani R.; Goad, William K.

2005-01-01

Wing-Viewer is a computer program for acquisition and reduction of image data acquired by any of five different scientificgrade commercial electronic cameras used at Langley Research center to observe wind-tunnel models coated with pressure or temperature-sensitive paints (PSP/TSP). Wing-Viewer provides full automation of camera operation and acquisition of image data, and has limited data-preprocessing capability for quick viewing of the results of PSP/TSP test images. Wing- Viewer satisfies a requirement for a standard interface between all the cameras and a single personal computer: Written by use of Microsoft Visual C++ and the Microsoft Foundation Class Library as a framework, Wing-Viewer has the ability to communicate with the C/C++ software libraries that run on the controller circuit cards of all five cameras.

CSF neurofilament light chain and phosphorylated tau 181 predict disease progression in PSP.

Science.gov (United States)

Rojas, Julio C; Bang, Jee; Lobach, Iryna V; Tsai, Richard M; Rabinovici, Gil D; Miller, Bruce L; Boxer, Adam L

2018-01-23

To determine the ability of CSF biomarkers to predict disease progression in progressive supranuclear palsy (PSP). We compared the ability of baseline CSF β-amyloid 1-42 , tau, phosphorylated tau 181 (p-tau), and neurofilament light chain (NfL) concentrations, measured by INNO-BIA AlzBio3 or ELISA, to predict 52-week changes in clinical (PSP Rating Scale [PSPRS] and Schwab and England Activities of Daily Living [SEADL]), neuropsychological, and regional brain volumes on MRI using linear mixed effects models controlled for age, sex, and baseline disease severity, and Fisher F density curves to compare effect sizes in 50 patients with PSP. Similar analyses were done using plasma NfL measured by single molecule arrays in 141 patients. Higher CSF NfL concentration predicted more rapid decline (biomarker × time interaction) over 52 weeks in PSPRS ( p = 0.004, false discovery rate-corrected) and SEADL ( p = 0.008), whereas lower baseline CSF p-tau predicted faster decline on PSPRS ( p = 0.004). Higher CSF tau concentrations predicted faster decline by SEADL ( p = 0.004). The CSF NfL/p-tau ratio was superior for predicting change in PSPRS, compared to p-tau ( p = 0.003) or NfL ( p = 0.001) alone. Higher NfL concentrations in CSF or blood were associated with greater superior cerebellar peduncle atrophy (fixed effect, p ≤ 0.029 and 0.008, respectively). Both CSF p-tau and NfL correlate with disease severity and rate of disease progression in PSP. The inverse correlation of p-tau with disease severity suggests a potentially different mechanism of tau pathology in PSP as compared to Alzheimer disease. Copyright © 2017 American Academy of Neurology.

A programmable CCD driver circuit for multiphase CCD operation

International Nuclear Information System (INIS)

Ewin, A.J.; Reed, K.V.

1989-01-01

A programmable CCD driver circuit was designed to drive CCD's in multiphased modes. The purpose of the drive electronics was to operate developmental CCD imaging arrays for NASA's Moderate Resolution Imaging Spectrometer - Tiltable (MODIS-T). Five prototype arrays were designed. Valid's Graphics Editor (GED) was used to design the driver. With this driver design, any of the five arrays can be readout. Designing the driver with GED allowed functional simulation, timing verification, and certain packaging analyses to be done on the design before fabrication. The driver verified its function with the master clock running up to 10 MHz. This suggests a maximum rate of 400 Kpixels/sec. Timing and packaging parameters were verified. the design uses 54 TTL component chips

Combination of pneumococcal surface protein A (PspA with whole cell pertussis vaccine increases protection against pneumococcal challenge in mice.

Directory of Open Access Journals (Sweden)

Maria Leonor S Oliveira

Full Text Available Streptococcus pneumoniae is the leading cause of respiratory acute infections around the world. In Latin America, approximately 20,000 children under 5 years of age die of pneumococcal diseases annually. Pneumococcal surface protein A (PspA is among the best-characterized pneumococcal antigens that confer protection in animal models of pneumococcal infections and, as such, is a good alternative for the currently available conjugated vaccines. Efficient immune responses directed to PspA in animal models have already been described. Nevertheless, few low cost adjuvants for a subunit pneumococcal vaccine have been proposed to date. Here, we have tested the adjuvant properties of the whole cell Bordetella pertussis vaccine (wP that is currently part of the DTP (diphtheria-tetanus-pertussis vaccine administrated to children in several countries, as an adjuvant to PspA. Nasal immunization of BALB/c mice with a combination of PspA5 and wP or wP(low--a new generation vaccine that contains low levels of B. pertussis LPS--conferred protection against a respiratory lethal challenge with S. pneumoniae. Both PspA5-wP and PspA5-wP(low vaccines induced high levels of systemic and mucosal antibodies against PspA5, with similar profile, indicating no essential requirement for B. pertussis LPS in the adjuvant properties of wP. Accordingly, nasal immunization of C3H/HeJ mice with PspA5-wP conferred protection against the pneumococcal challenge, thus ruling out a role for TLR4 responses in the adjuvant activity and the protection mechanisms triggered by the vaccines. The high levels of anti-PspA5 antibodies correlated with increased cross-reactivity against PspAs from different clades and also reflected in cross-protection. In addition, passive immunization experiments indicated that antibodies played an important role in protection in this model. Finally, subcutaneous immunization with a combination of PspA5 with DTP(low protected mice against challenge with two

The design and development of low- and high-voltage ASICs for space-borne CCD cameras

Science.gov (United States)

Waltham, N.; Morrissey, Q.; Clapp, M.; Bell, S.; Jones, L.; Torbet, M.

2017-12-01

The CCD remains the pre-eminent visible and UV wavelength image sensor in space science, Earth and planetary remote sensing. However, the design of space-qualified CCD readout electronics is a significant challenge with requirements for low-volume, low-mass, low-power, high-reliability and tolerance to space radiation. Space-qualified components are frequently unavailable and up-screened commercial components seldom meet project or international space agency requirements. In this paper, we describe an alternative approach of designing and space-qualifying a series of low- and high-voltage mixed-signal application-specific integrated circuits (ASICs), the ongoing development of two low-voltage ASICs with successful flight heritage, and two new high-voltage designs. A challenging sub-system of any CCD camera is the video processing and digitisation electronics. We describe recent developments to improve performance and tolerance to radiation-induced single event latchup of a CCD video processing ASIC originally developed for NASA's Solar Terrestrial Relations Observatory and Solar Dynamics Observatory. We also describe a programme to develop two high-voltage ASICs to address the challenges presented with generating a CCD's bias voltages and drive clocks. A 0.35 μm, 50 V tolerant, CMOS process has been used to combine standard low-voltage 3.3 V transistors with high-voltage 50 V diffused MOSFET transistors that enable output buffers to drive CCD bias drains, gates and clock electrodes directly. We describe a CCD bias voltage generator ASIC that provides 24 independent and programmable 0-32 V outputs. Each channel incorporates a 10-bit digital-to-analogue converter, provides current drive of up to 20 mA into loads of 10 μF, and includes current-limiting and short-circuit protection. An on-chip telemetry system with a 12-bit analogue-to-digital converter enables the outputs and multiple off-chip camera voltages to be monitored. The ASIC can drive one or more CCDs and

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-11-15

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

International Nuclear Information System (INIS)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

2012-01-01

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

Macromolecular crystallography with a large format CMOS detector

Energy Technology Data Exchange (ETDEWEB)

Nix, Jay C., E-mail: jcnix@lbl.gov [Molecular Biology Consortium 12003 S. Pulaski Rd. #166 Alsip, IL 60803 U.S.A (United States)

2016-07-27

Recent advances in CMOS technology have allowed the production of large surface area detectors suitable for macromolecular crystallography experiments [1]. The Molecular Biology Consortium (MBC) Beamline 4.2.2 at the Advanced Light Source in Berkeley, CA, has installed a 2952 x 2820 mm RDI CMOS-8M detector with funds from NIH grant S10OD012073. The detector has a 20nsec dead pixel time and performs well with shutterless data collection strategies. The sensor obtains sharp point response and minimal optical distortion by use of a thin fiber-optic plate between the phosphor and sensor module. Shutterless data collections produce high-quality redundant datasets that can be obtained in minutes. The fine-sliced data are suitable for processing in standard crystallographic software packages (XDS, HKL2000, D*TREK, MOSFLM). Faster collection times relative to the previous CCD detector have resulted in a record number of datasets collected in a calendar year and de novo phasing experiments have resulted in publications in both Science and Nature [2,3]. The faster collections are due to a combination of the decreased overhead requirements of shutterless collections combined with exposure times that have decreased by over a factor of 2 for images with comparable signal to noise of the NOIR-1 detector. The overall increased productivity has allowed the development of new beamline capabilities and data collection strategies.

The pancreas responds to remote damage and systemic stress by secretion of the pancreatic secretory proteins PSP/regI and PAP/regIII.

Science.gov (United States)

Reding, Theresia; Palmiere, Cristian; Pazhepurackel, Clinsyjos; Schiesser, Marc; Bimmler, Daniel; Schlegel, Andrea; Süss, Ursula; Steiner, Sabrina; Mancina, Leandro; Seleznik, Gitta; Graf, Rolf

2017-05-02

In patients with infection and sepsis serum levels of Pancreatic Stone protein/regenerating protein I (PSP) are highly elevated. The origin of PSP during these conditions is presumably the pancreas, however, an intestinal origin cannot be excluded. Similarly, pancreatitis-associated protein (PAP) was identified in the pancreas. These proteins were also localized in intestinal organs. Here we aim to elucidate the bio-distribution of PSP and PAP in animal models of sepsis and in healthy humans. PSP and PAP responded to remote lesions in rats although the pancreatic response was much more pronounced than the intestinal. Tissue distribution of PSP demonstrated a 100-fold higher content in the pancreas compared to any other organ while PAP was most abundant in the small intestine. Both proteins responded to CLP or sham operation in the pancreas. PSP also increased in the intestine during CLP. The distribution of PSP and PAP in human tissue mirrored the distribution in the murine models. Distribution of PSP and PAP was visualized by immunohistochemistry. Rats and mice underwent midline laparotomies followed by mobilization of tissue and incision of the pancreatic duct or duodenum. Standard cecum-ligation-puncture (CLP) procedures or sham laparotomies were performed. Human tissue extracts were analyzed for PSP and PAP. The pancreas reacts to remote lesions and septic insults in mice and rats with increased PSP synthesis, while PAP is selectively responsive to septic events. Furthermore, our results suggest that serum PSP in septic patients is predominantly derived through an acute phase response of the pancreas.

Advanced CCD camera developments

Energy Technology Data Exchange (ETDEWEB)

Condor, A. [Lawrence Livermore National Lab., CA (United States)

1994-11-15

Two charge coupled device (CCD) camera systems are introduced and discussed, describing briefly the hardware involved, and the data obtained in their various applications. The Advanced Development Group Defense Sciences Engineering Division has been actively designing, manufacturing, fielding state-of-the-art CCD camera systems for over a decade. These systems were originally developed for the nuclear test program to record data from underground nuclear tests. Today, new and interesting application for these systems have surfaced and development is continuing in the area of advanced CCD camera systems, with the new CCD camera that will allow experimenters to replace film for x-ray imaging at the JANUS, USP, and NOVA laser facilities.

Analysis of Pumped Storage Plants (PSP) viability associated with other types of intermittent renewable energy

International Nuclear Information System (INIS)

Andrade, J G P; Barbosa, P S F; Luvizotto, E Jr; Zuculin, S; Pinto, Marrc; Filho, G L Tiago

2014-01-01

The energy generated by wind or solar photovoltaic (PV system) can be used by PSP to accumulate water in the upper reservoir, in the form of potential energy to be used later, during periods of high energy demand. This procedure offers the advantage of enabling the use of intermittent renewable energy source in times of growing needs of the electric power supply. The location of the PSP, the environmental aspects involved, their possible use for various purposes (stability of the power system at peak times, associate the turbine water for public supply purposes, among others) and the discussion of regulatory issues needs to be debated in the current context, where environmental issues require reliable sources of power generation and demand shows strong growth rates. A dynamic model is used to analyze the behavior of a PSP proposal for a site in Brazil, analyzing a complete cycle of its operation as a pump or turbine. The existing difficulties to use this proposal based on existing regulatory policies are also discussed, and a list of recommended adjustments is provided to allow the penetrations of PSP projects in the Brazilian institutional framework, coupled with other intermittent energy sources

High-resolution CCD imaging alternatives

Science.gov (United States)

Brown, D. L.; Acker, D. E.

1992-08-01

High resolution CCD color cameras have recently stimulated the interest of a large number of potential end-users for a wide range of practical applications. Real-time High Definition Television (HDTV) systems are now being used or considered for use in applications ranging from entertainment program origination through digital image storage to medical and scientific research. HDTV generation of electronic images offers significant cost and time-saving advantages over the use of film in such applications. Further in still image systems electronic image capture is faster and more efficient than conventional image scanners. The CCD still camera can capture 3-dimensional objects into the computing environment directly without having to shoot a picture on film develop it and then scan the image into a computer. 2. EXTENDING CCD TECHNOLOGY BEYOND BROADCAST Most standard production CCD sensor chips are made for broadcast-compatible systems. One popular CCD and the basis for this discussion offers arrays of roughly 750 x 580 picture elements (pixels) or a total array of approximately 435 pixels (see Fig. 1). FOR. A has developed a technique to increase the number of available pixels for a given image compared to that produced by the standard CCD itself. Using an inter-lined CCD with an overall spatial structure several times larger than the photo-sensitive sensor areas each of the CCD sensors is shifted in two dimensions in order to fill in spatial gaps between adjacent sensors.

Check-All-That-Apply (CATA), Sorting, and Polarized Sensory Positioning (PSP) with Astringent Stimuli

Science.gov (United States)

Fleming, Erin E.; Ziegler, Gregory R.; Hayes, John E.

2015-01-01

Multiple rapid sensory profiling techniques have been developed as more efficient alternatives to traditional sensory descriptive analysis. Here, we compare the results of three rapid sensory profiling techniques – check-all-that-apply (CATA), sorting, and polarized sensory positioning (PSP) – using a diverse range of astringent stimuli. These rapid methods differ in their theoretical basis, implementation, and data analyses, and the relative advantages and limitations are largely unexplored. Additionally, we were interested in using these methods to compare varied astringent stimuli, as these compounds are difficult to characterize using traditional descriptive analysis due to high fatigue and potential carry-over. In the CATA experiment, subjects (n=41) were asked to rate the overall intensity of each stimulus as well as to endorse any relevant terms (from a list of 13) which characterized the sample. In the sorting experiment, subjects (n=30) assigned intensity-matched stimuli into groups 1-on-1 with the experimenter. In the PSP experiment, (n=41) subjects first sampled and took notes on three blind references (‘poles’) before rating each stimulus for its similarity to each of the 3 poles. Two-dimensional perceptual maps from correspondence analysis (CATA), multidimensional scaling (sorting), and multiple factor analysis (PSP) were remarkably similar, with normalized RV coefficients indicating significantly similar plots, regardless of method. Agglomerative hierarchical clustering of all data sets using Ward’s minimum variance as the linkage criteria showed the clusters of astringent stimuli were approximately based on the respective class of astringent agent. Based on the descriptive CATA data, it appears these differences may be due to the presence of side tastes such as bitterness and sourness, rather than astringent sub-qualities per se. Although all three methods are considered ‘rapid,’ our prior experience with sorting suggests it is best

Photon counting imaging and centroiding with an electron-bombarded CCD using single molecule localisation software

International Nuclear Information System (INIS)

Hirvonen, Liisa M.; Barber, Matthew J.; Suhling, Klaus

2016-01-01

Photon event centroiding in photon counting imaging and single-molecule localisation in super-resolution fluorescence microscopy share many traits. Although photon event centroiding has traditionally been performed with simple single-iteration algorithms, we recently reported that iterative fitting algorithms originally developed for single-molecule localisation fluorescence microscopy work very well when applied to centroiding photon events imaged with an MCP-intensified CMOS camera. Here, we have applied these algorithms for centroiding of photon events from an electron-bombarded CCD (EBCCD). We find that centroiding algorithms based on iterative fitting of the photon events yield excellent results and allow fitting of overlapping photon events, a feature not reported before and an important aspect to facilitate an increased count rate and shorter acquisition times.

Binary pressure-sensitive paint measurements using miniaturised, colour, machine vision cameras

Science.gov (United States)

Quinn, Mark Kenneth

2018-05-01

Recent advances in machine vision technology and capability have led to machine vision cameras becoming applicable for scientific imaging. This study aims to demonstrate the applicability of machine vision colour cameras for the measurement of dual-component pressure-sensitive paint (PSP). The presence of a second luminophore component in the PSP mixture significantly reduces its inherent temperature sensitivity, increasing its applicability at low speeds. All of the devices tested are smaller than the cooled CCD cameras traditionally used and most are of significantly lower cost, thereby increasing the accessibility of such technology and techniques. Comparisons between three machine vision cameras, a three CCD camera, and a commercially available specialist PSP camera are made on a range of parameters, and a detailed PSP calibration is conducted in a static calibration chamber. The findings demonstrate that colour machine vision cameras can be used for quantitative, dual-component, pressure measurements. These results give rise to the possibility of performing on-board dual-component PSP measurements in wind tunnels or on real flight/road vehicles.

PSP: rapid identification of orthologous coding genes under positive selection across multiple closely related prokaryotic genomes.

Science.gov (United States)

Su, Fei; Ou, Hong-Yu; Tao, Fei; Tang, Hongzhi; Xu, Ping

2013-12-27

With genomic sequences of many closely related bacterial strains made available by deep sequencing, it is now possible to investigate trends in prokaryotic microevolution. Positive selection is a sub-process of microevolution, in which a particular mutation is favored, causing the allele frequency to continuously shift in one direction. Wide scanning of prokaryotic genomes has shown that positive selection at the molecular level is much more frequent than expected. Genes with significant positive selection may play key roles in bacterial adaption to different environmental pressures. However, selection pressure analyses are computationally intensive and awkward to configure. Here we describe an open access web server, which is designated as PSP (Positive Selection analysis for Prokaryotic genomes) for performing evolutionary analysis on orthologous coding genes, specially designed for rapid comparison of dozens of closely related prokaryotic genomes. Remarkably, PSP facilitates functional exploration at the multiple levels by assignments and enrichments of KO, GO or COG terms. To illustrate this user-friendly tool, we analyzed Escherichia coli and Bacillus cereus genomes and found that several genes, which play key roles in human infection and antibiotic resistance, show significant evidence of positive selection. PSP is freely available to all users without any login requirement at: http://db-mml.sjtu.edu.cn/PSP/. PSP ultimately allows researchers to do genome-scale analysis for evolutionary selection across multiple prokaryotic genomes rapidly and easily, and identify the genes undergoing positive selection, which may play key roles in the interactions of host-pathogen and/or environmental adaptation.

Enhanced performance CCD output amplifier

Science.gov (United States)

Dunham, Mark E.; Morley, David W.

1996-01-01

A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

Crystallization of the C-terminal domain of the addiction antidote CcdA in complex with its toxin CcdB

International Nuclear Information System (INIS)

Buts, Lieven; De Jonge, Natalie; Loris, Remy; Wyns, Lode; Dao-Thi, Minh-Hoa

2005-01-01

The CcdA C-terminal domain was crystallized in complex with CcdB in two crystal forms that diffract to beyond 2.0 Å resolution. CcdA and CcdB are the antidote and toxin of the ccd addiction module of Escherichia coli plasmid F. The CcdA C-terminal domain (CcdA C36 ; 36 amino acids) was crystallized in complex with CcdB (dimer of 2 × 101 amino acids) in three different crystal forms, two of which diffract to high resolution. Form II belongs to space group P2 1 2 1 2 1 , with unit-cell parameters a = 37.6, b = 60.5, c = 83.8 Å and diffracts to 1.8 Å resolution. Form III belongs to space group P2 1 , with unit-cell parameters a = 41.0, b = 37.9, c = 69.6 Å, β = 96.9°, and diffracts to 1.9 Å resolution

Anionic lipids and the cytoskeletal proteins MreB and RodZ define the spatio-temporal distribution and function of membrane stress controller PspA in Escherichia coli.

Science.gov (United States)

Jovanovic, Goran; Mehta, Parul; Ying, Liming; Buck, Martin

2014-11-01

All cell types must maintain the integrity of their membranes. The conserved bacterial membrane-associated protein PspA is a major effector acting upon extracytoplasmic stress and is implicated in protection of the inner membrane of pathogens, formation of biofilms and multi-drug-resistant persister cells. PspA and its homologues in Gram-positive bacteria and archaea protect the cell envelope whilst also supporting thylakoid biogenesis in cyanobacteria and higher plants. In enterobacteria, PspA is a dual function protein negatively regulating the Psp system in the absence of stress and acting as an effector of membrane integrity upon stress. We show that in Escherichia coli the low-order oligomeric PspA regulatory complex associates with cardiolipin-rich, curved polar inner membrane regions. There, cardiolipin and the flotillin 1 homologue YqiK support the PspBC sensors in transducing a membrane stress signal to the PspA-PspF inhibitory complex. After stress perception, PspA high-order oligomeric effector complexes initially assemble in polar membrane regions. Subsequently, the discrete spatial distribution and dynamics of PspA effector(s) in lateral membrane regions depend on the actin homologue MreB and the peptidoglycan machinery protein RodZ. The consequences of loss of cytoplasmic membrane anionic lipids, MreB, RodZ and/or YqiK suggest that the mode of action of the PspA effector is closely associated with cell envelope organization. © 2014 The Authors.

Transmission electron microscope CCD camera

Science.gov (United States)

Downing, Kenneth H.

1999-01-01

In order to improve the performance of a CCD camera on a high voltage electron microscope, an electron decelerator is inserted between the microscope column and the CCD. This arrangement optimizes the interaction of the electron beam with the scintillator of the CCD camera while retaining optimization of the microscope optics and of the interaction of the beam with the specimen. Changing the electron beam energy between the specimen and camera allows both to be optimized.

CCD research. [design, fabrication, and applications

Science.gov (United States)

Gassaway, J. D.

1976-01-01

The fundamental problems encountered in designing, fabricating, and applying CCD's are reviewed. Investigations are described and results and conclusions are given for the following: (1) the development of design analyses employing computer aided techniques and their application to the design of a grapped structure; (2) the role of CCD's in applications to electronic functions, in particular, signal processing; (3) extending the CCD to silicon films on sapphire (SOS); and (4) all aluminum transfer structure with low noise input-output circuits. Related work on CCD imaging devices is summarized.

Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

International Nuclear Information System (INIS)

Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

2011-01-01

This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

Assessment of endodontically treated teeth by using different radiographic methods: an ex vivo comparison between CBCT and other radiographic techniques

International Nuclear Information System (INIS)

Demiralp, Kemal Oeaguer; Uecok, Oezlem; Kamburoglu, Kivanc; Selcen Yuesel, Kahraman Guengoer; Demiralp, Gokcen

2012-01-01

To compare different radiographic methods for assessing endodontically treated teeth. Root canal treatments were applied in 120 extracted mandibular teeth, which were divided into four groups: (1) ideal root canal treatment (60 teeth), (2) insufficient lateral condensation (20 teeth), (3) root canals filled short of the apex (20 teeth), (4) overfilled root canal treatment (20 teeth). The teeth were imaged using intraoral film, panoramic film, digital intraoral systems (CCD and PSP), CCD obtained with portable X-ray source, digital panoramic, and CBCT images obtained at 0.3 mm 3 and 0.2 mm'3 voxel size. Images were evaluated separately by three observers, twice. Kappa coefficients were calculated. The percentage of correct readings obtained from each modality was calculated and compared using a t-test (p 3 voxel images revealed the best results. For insufficient lateral condensation, the best readings were found with periapical film followed by CCD and PSP. The assessment of teeth with root canals filled short of the apex showed the highest percentage of correct readings by CBCT and CCD. For the overfilled canal treatment group, PSP images and conventional periapical film radiographs had the best scores. CBCT was found to be successful in the assessment of teeth with ideal root canal treatment and teeth with canals filled short of the apex.

Ultrahigh sensitivity endoscopic camera using a new CMOS image sensor: providing with clear images under low illumination in addition to fluorescent images.

Science.gov (United States)

Aoki, Hisae; Yamashita, Hiromasa; Mori, Toshiyuki; Fukuyo, Tsuneo; Chiba, Toshio

2014-11-01

We developed a new ultrahigh-sensitive CMOS camera using a specific sensor that has a wide range of spectral sensitivity characteristics. The objective of this study is to present our updated endoscopic technology that has successfully integrated two innovative functions; ultrasensitive imaging as well as advanced fluorescent viewing. Two different experiments were conducted. One was carried out to evaluate the function of the ultrahigh-sensitive camera. The other was to test the availability of the newly developed sensor and its performance as a fluorescence endoscope. In both studies, the distance from the endoscopic tip to the target was varied and those endoscopic images in each setting were taken for further comparison. In the first experiment, the 3-CCD camera failed to display the clear images under low illumination, and the target was hardly seen. In contrast, the CMOS camera was able to display the targets regardless of the camera-target distance under low illumination. Under high illumination, imaging quality given by both cameras was quite alike. In the second experiment as a fluorescence endoscope, the CMOS camera was capable of clearly showing the fluorescent-activated organs. The ultrahigh sensitivity CMOS HD endoscopic camera is expected to provide us with clear images under low illumination in addition to the fluorescent images under high illumination in the field of laparoscopic surgery.

Effects of Robot Assisted Gait Training in Progressive Supranuclear Palsy (PSP: a preliminary report.

Directory of Open Access Journals (Sweden)

Patrizio eSale

2014-04-01

Full Text Available Background and Purpose: Progressive supranuclear palsy (PSP is a rare neurodegenerative disease clinically characterized by prominent axial extrapyramidal motor symptoms with frequent falls. Over the last years the introduction of robotic technologies to recover lower limb function has been greatly employed in the rehabilitative practice. This observational trial is aimed at investigating the feasibility, the effectiveness and the efficacy of end-effector robot training in people with PSP.Method: Pilot observational trial.Participants: Five cognitively intact participants with PSP and gait disorders.Interventions: Patients were submitted to a rehabilitative program of robot-assisted walking sessions for 45 minutes, 5 times a week for 4 weeks.Main outcome measures: The spatiotemporal parameters at the beginning (T0 and at the end of treatment (T1 were recorded by a gait analysis laboratory.Results: Robot training was feasible, acceptable and safe and all participants completed the prescribed training sessions. All patients showed an improvement in the gait index (Mean velocity, Cadence, Step length and Step width (T0 versus T1.Conclusions: Robot training is a feasible and safe form of rehabilitation for cognitively intact people with PSP. This innovative approach can contribute to improve lower limb motor recovery. The focus on gait recovery is another quality that makes this research important for clinical practice. On the whole, the simplicity of treatment, the lack of side effects and the positive results in the patients support the recommendation to extend the trials of this treatment. Further investigation regarding the effectiveness of robot training in time is necessary.Trial registration: ClinicalTrials.gov NCT01668407.

Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

Science.gov (United States)

Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

2011-01-01

In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

BioCMOS Interfaces and Co-Design

CERN Document Server

Carrara, Sandro

2013-01-01

The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

CCD and IR array controllers

Science.gov (United States)

Leach, Robert W.; Low, Frank J.

2000-08-01

A family of controllers has bene developed that is powerful and flexible enough to operate a wide range of CCD and IR focal plane arrays in a variety of ground-based applications. These include fast readout of small CCD and IR arrays for adaptive optics applications, slow readout of large CCD and IR mosaics, and single CCD and IR array operation at low background/low noise regimes as well as high background/high speed regimes. The CCD and IR controllers have a common digital core based on user- programmable digital signal processors that are used to generate the array clocking and signal processing signals customized for each application. A fiber optic link passes image data and commands to VME or PCI interface boards resident in a host computer to the controller. CCD signal processing is done with a dual slope integrator operating at speeds of up to one Megapixel per second per channel. Signal processing of IR arrays is done either with a dual channel video processor or a four channel video processor that has built-in image memory and a coadder to 32-bit precision for operating high background arrays. Recent developments underway include the implementation of a fast fiber optic data link operating at a speed of 12.5 Megapixels per second for fast image transfer from the controller to the host computer, and supporting image acquisition software and device drivers for the PCI interface board for the Sun Solaris, Linux and Windows 2000 operating systems.

Enzymatic study on AtCCD4 and AtCCD7 and their potential to form acyclic regulatory metabolites

KAUST Repository

Bruno, Mark

2016-09-29

The Arabidopsis carotenoid cleavage dioxygenase 4 (AtCCD4) is a negative regulator of the carotenoid content of seeds and has recently been suggested as a candidate for the generation of retrograde signals that are thought to derive from the cleavage of poly-cis-configured carotene desaturation intermediates. In this work, we investigated the activity of AtCCD4 in vitro and used dynamic modeling to determine its substrate preference. Our results document strict regional specificity for cleavage at the C9–C10 double bond in carotenoids and apocarotenoids, with preference for carotenoid substrates and an obstructing effect on hydroxyl functions, and demonstrate the specificity for all-trans-configured carotenes and xanthophylls. AtCCD4 cleaved substrates with at least one ionone ring and did not convert acyclic carotene desaturation intermediates, independent of their isomeric states. These results do not support a direct involvement of AtCCD4 in generating the supposed regulatory metabolites. In contrast, the strigolactone biosynthetic enzyme AtCCD7 converted 9-cis-configured acyclic carotenes, such as 9-cis-ζ-carotene, 9\\'-cis-neurosporene, and 9-cis-lycopene, yielding 9-cis-configured products and indicating that AtCCD7, rather than AtCCD4, is the candidate for forming acyclic retrograde signals.

Enzymatic study on AtCCD4 and AtCCD7 and their potential to form acyclic regulatory metabolites

KAUST Repository

Bruno, Mark; Koschmieder, Julian; Wuest, Florian; Schaub, Patrick; Fehling-Kaschek, Mirjam; Timmer, Jens; Beyer, Peter; Al-Babili, Salim

2016-01-01

The Arabidopsis carotenoid cleavage dioxygenase 4 (AtCCD4) is a negative regulator of the carotenoid content of seeds and has recently been suggested as a candidate for the generation of retrograde signals that are thought to derive from the cleavage of poly-cis-configured carotene desaturation intermediates. In this work, we investigated the activity of AtCCD4 in vitro and used dynamic modeling to determine its substrate preference. Our results document strict regional specificity for cleavage at the C9–C10 double bond in carotenoids and apocarotenoids, with preference for carotenoid substrates and an obstructing effect on hydroxyl functions, and demonstrate the specificity for all-trans-configured carotenes and xanthophylls. AtCCD4 cleaved substrates with at least one ionone ring and did not convert acyclic carotene desaturation intermediates, independent of their isomeric states. These results do not support a direct involvement of AtCCD4 in generating the supposed regulatory metabolites. In contrast, the strigolactone biosynthetic enzyme AtCCD7 converted 9-cis-configured acyclic carotenes, such as 9-cis-ζ-carotene, 9'-cis-neurosporene, and 9-cis-lycopene, yielding 9-cis-configured products and indicating that AtCCD7, rather than AtCCD4, is the candidate for forming acyclic retrograde signals.

Enzymatic study on AtCCD4 and AtCCD7 and their potential to form acyclic regulatory metabolites

Science.gov (United States)

Bruno, Mark; Koschmieder, Julian; Wuest, Florian; Schaub, Patrick; Fehling-Kaschek, Mirjam; Timmer, Jens; Beyer, Peter; Al-Babili, Salim

2016-01-01

The Arabidopsis carotenoid cleavage dioxygenase 4 (AtCCD4) is a negative regulator of the carotenoid content of seeds and has recently been suggested as a candidate for the generation of retrograde signals that are thought to derive from the cleavage of poly-cis-configured carotene desaturation intermediates. In this work, we investigated the activity of AtCCD4 in vitro and used dynamic modeling to determine its substrate preference. Our results document strict regional specificity for cleavage at the C9–C10 double bond in carotenoids and apocarotenoids, with preference for carotenoid substrates and an obstructing effect on hydroxyl functions, and demonstrate the specificity for all-trans-configured carotenes and xanthophylls. AtCCD4 cleaved substrates with at least one ionone ring and did not convert acyclic carotene desaturation intermediates, independent of their isomeric states. These results do not support a direct involvement of AtCCD4 in generating the supposed regulatory metabolites. In contrast, the strigolactone biosynthetic enzyme AtCCD7 converted 9-cis-configured acyclic carotenes, such as 9-cis-ζ-carotene, 9'-cis-neurosporene, and 9-cis-lycopene, yielding 9-cis-configured products and indicating that AtCCD7, rather than AtCCD4, is the candidate for forming acyclic retrograde signals. PMID:27811075

Hybrid CMOS/Molecular Integrated Circuits

Science.gov (United States)

Stan, M. R.; Rose, G. S.; Ziegler, M. M.

CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

[Can solar/geomagnetic activity restrict the occurrence of some shellfish poisoning outbreaks? The example of PSP caused by Gymnodinium catenatum at the Atlantic Portuguese coast].

Science.gov (United States)

Vale, P

2013-01-01

Cyclic outbreaks of accumulation of paralytic shellfish poisoning (PSP) toxins in mussels attributed to Gymnodinium catenatum blooms displayed several of the highest inter-annual maxima coincidental with minima of the 11-year solar sunspot number (SSN) cycle. The monthly distribution of PSP was associated with low levels of the solar radio flux, a more quantitative approach than SSN for fluctuations in solar activity. A comparison between monthly distribution of PSP and other common biotoxins (okadaic acid (OA), dinophysistoxin-2 (DTX2) and amnesic shellfish poisoning (ASP) toxins) demonstrated that only PSP was significantly associated with low levels of radio flux (p < 0.01). PSP occurrence suggests a prior decline in solar activity could be required to act as a trigger, in a similar manner to a photoperiodic signal. The seasonal frequency increased towards autumn during the study period, which might be related to the progressive atmospheric cut-off of deleterious radiation associated with the seasonal change in solar declination, and might play an additional role in seasonal signal-triggering. PSP distribution was also associated with low levels of the geomagnetic index Aa. A comparison between monthly distribution of PSP and other common biotoxins, also demonstrated that only PSP was significantly associated with low levels of the Aa index (p < 0.01). In some years of SSN minima no significant PSP-outbreaks in mussels were detected. This was attributed to a steady rise in geomagnetic activity that could disrupt the triggering signal. Global distribution patterns show that hotspots for G. catenatum blooms are regions with deficient crustal magnetic anomalies. In addition to the variable magnetic field mostly of solar origin, static fields related to magnetized rocks in the crust and upper mantle might play a role in restricting worldwide geographic distribution.

Charge diffusion in CCD X-ray detectors

International Nuclear Information System (INIS)

Pavlov, George G.; Nousek, John A.

1999-01-01

Critical to the detection of X-rays by CCDs, is the detailed process of charge diffusion and drift within the device. We reexamine the prescriptions currently used in the modeling of X-ray CCD detectors to provide analytic expressions for the charge distribution over the CCD pixels which are suitable for use in numerical simulations of CCD response. Our treatment results in models which predict charge distributions which are more centrally peaked and have flatter wings than the Gaussian shapes predicted by previous work and adopted in current CCD modeling codes

The inhibitory effects of polysaccharide peptides (PsP of Ganoderma lucidum against atherosclerosis in rats with dyslipidemia

Directory of Open Access Journals (Sweden)

Titin Andri Wihastuti

2017-04-01

Full Text Available BackgroundAtherosclerosis occurs as a result of low-density lipoprotein (LDL deposits oxidation. Endothelial dysfunction is an early process of atherosclerosis. Restoring endothelial lining back to normal by endothelial progenitor cells (EPCs is critical for slowing or reversing vascular disease progression. Oxidative stress from hydrogen peroxide (H2O2 is increased in dyslipidemia so that antioxidant agent is required to prevent destruction of blood vessels.ObjectivesThis study aims to report Ganoderma lucidum polysaccharide peptide (PsP effects in atherogenic process by measuring H2O2 level, IL-10 level, and EPC number in blood serum, and also intima-media thickness of aorta in dyslipidemia Wistar rat model by giving them a hypercholesterol diet (HCD.Materials and methodsThe study was an experimental in vivo post-test with control group design. Thirty-five Wistar rats (Rattus norwegicus were divided into five groups (normal diet group, HCD group, and hypercholesterol groups that received 50 mg/kg, 150 mg/kg, and 300 mg/kg bodyweight PsP.ResultsEach treatment group showed significant results for the administration of PsP using the one-way analysis of variance test (p<0.050 for the reduction of H2O2 (p = 0.003, levels of IL-10 (p = 0.027, number of EPC in the blood serum (p = 0.011, and the intima-media thickness of the aorta (p = 0.000. PsP from G. lucidum is a potent antioxidant and may prevent atherogenesis process in patients with dyslipidemia.ConclusionsThe optimum doses of PsP in this study is 300 mg/kg bodyweight. Further studies are required to determine the antioxidant effects of PsP G. lucidum and its benefits in the management of dyslipidemia.

Fully depleted back-illuminated p-channel CCD development

Energy Technology Data Exchange (ETDEWEB)

Bebek, Chris J.; Bercovitz, John H.; Groom, Donald E.; Holland, Stephen E.; Kadel, Richard W.; Karcher, Armin; Kolbe, William F.; Oluseyi, Hakeem M.; Palaio, Nicholas P.; Prasad, Val; Turko, Bojan T.; Wang, Guobin

2003-07-08

An overview of CCD development efforts at Lawrence Berkeley National Laboratory is presented. Operation of fully-depleted, back-illuminated CCD's fabricated on high resistivity silicon is described, along with results on the use of such CCD's at ground-based observatories. Radiation damage and point-spread function measurements are described, as well as discussion of CCD fabrication technologies.

CMOS MEMS Fabrication Technologies and Devices

Directory of Open Access Journals (Sweden)

Hongwei Qu

2016-01-01

Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

KAUST Repository

Saffih, Faycal; Elshurafa, Amro M.; Mohammad, Mohammad Ali; Nelson-Fitzpatrick, Nathan E.; Evoy, S.

2012-01-01

. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly

Familias de la proteína de superficie PspA de Streptococcus pneumoniae: Relación con serotipos y localización

Directory of Open Access Journals (Sweden)

Clara Mayoral

2010-10-01

Full Text Available PspA, proteína de superficie de Streptococcus pneumoniae es un factor de virulencia, fuertemente inmunogénica y común a todos los serotipos. Aunque el gen que codifica para esta proteína presenta una marcada heterogeneidad en la región correspondiente al N-terminal, la PspA contiene epitopes conservados de manera tal que la inmunización genera protección contra neumococos pertenecientes a diversos tipos capsulares y con distintas PspA. A pesar del marcado polimorfismo del gen pspA es posible agrupar las distintas variantes en 3 familias mayoritarias. Estas propiedades las convierten en candidatas ideales para elaborar vacunas. Debido a que la mayoría de los trabajos sobre identificación de familias fueron realizados sobre serotipos frecuentes en otros países, el objetivo fue identificar las familias de PspA de aislamientos de pacientes de nuestra región y relacionarlas con los serotipos prevalentes y patologías. Se estudiaron 70 aislamientos, provenientes de niños con infecciones invasoras. Se aplicó una PCR utilizando cebadores específicos de cada familia. El 60% fueron familia 1 y 34% familia 2. En un 6% no se identificó ninguna de las familias de PspA. Los serotipos 1 y 5 presentaron familia 1 únicamente; los serotipos 14, 6B, 19F y 18C mostraron genes de ambas familias. La familia 1 se observó en 60% de las neumonías y 50% de las meningitis. La familia 2 en 33% de neumonías y 50% de meningitis. Esta información podría ser un valioso aporte para la formulación de una vacuna regional efectiva utilizando PspA recombinante como inmunógeno.

Immunomodulatory effect of APS and PSP is mediated by Ca2+-cAMP and TLR4/NF-κB signaling pathway in macrophage.

Science.gov (United States)

Wang, Zhixue; Liu, Zijing; Zhou, Lijng; Long, Tingting; Zhou, Xing; Bao, Yixi

2017-01-01

This study is to investigate the role of second messengers and TLR4/NF-κB signaling pathway in the immunomodulatory activities of Astragalus polysaccharide (APS) and Polysaccharopeptide (PSP) in macrophages. RAW 264.7 macrophage cells were treated with APS, PSP, lipopolysaccharide (LPS), or NiCl 2 . Power-spectral method was used to detect protein kinase C (PKC) and Griess reaction to detect nitric oxide (NO). ELISA was conducted to detect cyclic adenosine monophosphate (cAMP), diglycerides (DAG), inositol 1, 4, 5-triphosphate (IP3), tumor necrosis factor-α (TNF-α) and interleukin-6 (IL-6). Confocal laser scanning microscopy was performed to detect calcium level. qRT-PCR and Western blot was used to detect mRNA and protein expression of NF-κB. APS and PSP significantly increased the concentrations of intracellular second messengers (NO, cAMP, DAG, IP3, Ca 2+ ) and the activity of PKC in macrophages (pAPS and PSP (pAPS and PSP mediated immunomodulatory activities in macrophages. Copyright © 2016 Elsevier B.V. All rights reserved.

In vitro comparison between the image obtained using PSP plates and Kodak E-speed films.

Science.gov (United States)

Petel, R; Yaroslavsky, L; Kaffe, I

2014-07-01

The aim of this study was to compare the intra-oral radiographic images obtained by a PSP digital radiography system ("Orex", Israel) with that obtained using Kodak Ultra speed films in terms of image quality, radiation dosage and diagnostic value. The physical measurement of image quality was conducted with an aluminum step-wedge. Radiation dosage was measured with a dosimeter. Fog and base levels were measured by developing unexposed films and scanning unexposed PSP plates. The in vitro model included preparation and radiographic evaluation of approximal artificial lesions in premolars and molars in depths ranging from 0.25 mm to 1.00 mm. Radiographs were evaluated for the existence of a lesion and its size by 8 experienced clinicians. Relative contrast was similar in both methods. The resolving power of the digital system was lower than that of the E-speed film. As for the subjective evaluation of artificial lesions, there was no significant difference between the two methods excluding those tooth images without lesions, where the analog method was found to be more accurate. The PSP system ("Orex") provides good image quality and diagnostic information with reduced exposure when compared with E-speed film.

Development of a thinned back-illuminated CMOS active pixel sensor for extreme ultraviolet spectroscopy and imaging in space science

International Nuclear Information System (INIS)

Waltham, N.R.; Prydderch, M.; Mapson-Menard, H.; Pool, P.; Harris, A.

2007-01-01

We describe our programme to develop a large-format, science-grade, monolithic CMOS active pixel sensor for future space science missions, and in particular an extreme ultraviolet (EUV) spectrograph for solar physics studies on ESA's Solar Orbiter. Our route to EUV sensitivity relies on adapting the back-thinning and rear-illumination techniques first developed for CCD sensors. Our first large-format sensor consists of 4kx3k 5 μm pixels fabricated on a 0.25 μm CMOS imager process. Wafer samples of these sensors have been thinned by e2v technologies with the aim of obtaining good sensitivity at EUV wavelengths. We present results from both front- and back-illuminated versions of this sensor. We also present our plans to develop a new sensor of 2kx2k 10 μm pixels, which will be fabricated on a 0.35 μm CMOS process. In progress towards this goal, we have designed a test-structure consisting of six arrays of 512x512 10 μm pixels. Each of the arrays has been given a different pixel design to allow verification of our models, and our progress towards optimizing a design for minimal system readout noise and maximum dynamic range. These sensors will also be back-thinned for characterization at EUV wavelengths

Meteor Film Recording with Digital Film Cameras with large CMOS Sensors

Science.gov (United States)

Slansky, P. C.

2016-12-01

In this article the author combines his professional know-how about cameras for film and television production with his amateur astronomy activities. Professional digital film cameras with high sensitivity are still quite rare in astronomy. One reason for this may be their costs of up to 20 000 and more (camera body only). In the interim, however,consumer photo cameras with film mode and very high sensitivity have come to the market for about 2 000 EUR. In addition, ultra-high sensitive professional film cameras, that are very interesting for meteor observation, have been introduced to the market. The particular benefits of digital film cameras with large CMOS sensors, including photo cameras with film recording function, for meteor recording are presented by three examples: a 2014 Camelopardalid, shot with a Canon EOS C 300, an exploding 2014 Aurigid, shot with a Sony alpha7S, and the 2016 Perseids, shot with a Canon ME20F-SH. All three cameras use large CMOS sensors; "large" meaning Super-35 mm, the classic 35 mm film format (24x13.5 mm, similar to APS-C size), or full format (36x24 mm), the classic 135 photo camera format. Comparisons are made to the widely used cameras with small CCD sensors, such as Mintron or Watec; "small" meaning 12" (6.4x4.8 mm) or less. Additionally, special photographic image processing of meteor film recordings is discussed.

Nontypeable pneumococci can be divided into multiple cps types, including one type expressing the novel gene pspK.

Science.gov (United States)

Park, In Ho; Kim, Kyung-Hyo; Andrade, Ana Lucia; Briles, David E; McDaniel, Larry S; Nahm, Moon H

2012-01-01

Although virulence of Streptococcus pneumoniae is associated with its capsule, some pathogenic S. pneumoniae isolates lack capsules and are serologically nontypeable (NT). We obtained 64 isolates that were identified as NT "pneumococci" (i.e., bacteria satisfying the conventional definition but without the multilocus sequence typing [MLST]-based definition of S. pneumoniae) by the traditional criteria. All 64 were optochin sensitive and had lytA, and 63 had ply. Twelve isolates had cpsA, suggesting the presence of a conventional but defective capsular polysaccharide synthesis (cps) locus. The 52 cpsA-negative isolates could be divided into three null capsule clades (NCC) based on aliC (aliB-like ORF1), aliD (aliB-like ORF2), and our newly discovered gene, pspK, in their cps loci. pspK encodes a protein with a long alpha-helical region containing an LPxTG motif and a YPT motif known to bind human pIgR. There were nine isolates in NCC1 (pspK(+) but negative for aliC and aliD), 32 isolates in NCC2 (aliC(+) aliD(+) but negative for pspK), and 11 in NCC3 (aliD(+) but negative for aliC and pspK). Among 52 cpsA-negative isolates, 41 were identified as S. pneumoniae by MLST analysis. All NCC1 and most NCC2 isolates were S. pneumoniae, whereas all nine NCC3 and two NCC2 isolates were not S. pneumoniae. Several NCC1 and NCC2 isolates from multiple individuals had identical MLST and cps regions, showing that unencapsulated S. pneumoniae can be infectious among humans. Furthermore, NCC1 and NCC2 S. pneumoniae isolates could colonize mice as well as encapsulated S. pneumoniae, although S. pneumoniae with an artificially disrupted cps locus did not. Moreover, an NCC1 isolate with pspK deletion did not colonize mice, suggesting that pspK is critical for colonization. Thus, PspK may provide pneumococci a means of surviving in the nasopharynx without capsule. IMPORTANCE The presence of a capsule is critical for many pathogenic bacteria, including pneumococci. Reflecting the

Utility and accuracy of perceptual voice and speech distinctions in the diagnosis of Parkinson's disease, PSP and MSA-P.

Science.gov (United States)

Miller, Nick; Nath, Uma; Noble, Emma; Burn, David

2017-06-01

To determine if perceptual speech measures distinguish people with Parkinson's disease (PD), multiple system atrophy with predominant parkinsonism (MSA-P) and progressive supranuclear palsy (PSP). Speech-language therapists blind to patient characteristics employed clinical rating scales to evaluate speech/voice in 24 people with clinically diagnosed PD, 17 with PSP and 9 with MSA-P, matched for disease duration (mean 4.9 years, standard deviation 2.2). No consistent intergroup differences appeared on specific speech/voice variables. People with PD were significantly less impaired on overall speech/voice severity. Analyses by severity suggested further investigation around laryngeal, resonance and fluency changes may characterize individual groups. MSA-P and PSP compared with PD were distinguished by severity of speech/voice deterioration, but individual speech/voice parameters failed to consistently differentiate groups.

CCD's at TPC

International Nuclear Information System (INIS)

Zeller, M.E.

1977-01-01

The CCD, Charge Coupled Device, is an analog shift register for which application to the readout of particle detectors has recently been realized. These devices can be used to detect optical information directly, providing an automated readout for streamer or other optical chambers, or as a single input shift register, acting in this instance as a delay line for analog information. A description is given of the latter mode of operation and its utility as a readout method for drift chambers. Most of the information contained herein has been obtained from tests performed in connection with PEP TPC project, PEP-4. That detector will employ approximately 10 4 CCD's making it a reasonable testing ground for ISABELLE size detectors

The design of the CMOS wireless bar code scanner applying optical system based on ZigBee

Science.gov (United States)

Chen, Yuelin; Peng, Jian

2008-03-01

The traditional bar code scanner is influenced by the length of data line, but the farthest distance of the wireless bar code scanner of wireless communication is generally between 30m and 100m on the market. By rebuilding the traditional CCD optical bar code scanner, a CMOS code scanner is designed based on the ZigBee to meet the demands of market. The scan system consists of the CMOS image sensor and embedded chip S3C2401X, when the two dimensional bar code is read, the results show the inaccurate and wrong code bar, resulted from image defile, disturber, reads image condition badness, signal interference, unstable system voltage. So we put forward the method which uses the matrix evaluation and Read-Solomon arithmetic to solve them. In order to construct the whole wireless optics of bar code system and to ensure its ability of transmitting bar code image signals digitally with long distances, ZigBee is used to transmit data to the base station, and this module is designed based on image acquisition system, and at last the wireless transmitting/receiving CC2430 module circuit linking chart is established. And by transplanting the embedded RTOS system LINUX to the MCU, an applying wireless CMOS optics bar code scanner and multi-task system is constructed. Finally, performance of communication is tested by evaluation software Smart RF. In broad space, every ZIGBEE node can realize 50m transmission with high reliability. When adding more ZigBee nodes, the transmission distance can be several thousands of meters long.

Defective plastic infection-control barriers and faulty technique may cause PSP plate contamination used in digital intraoral radiography.

Science.gov (United States)

Kuperstein, Arthur S

2012-09-01

Fifty-two disinfected photostimulable phosphor (PSP) plates in plastic barrier envelopes were evaluated for contamination following placement in 30 study participants. Forty-four plates were acceptable for use in the study. The risk factor was the abundant oropharyngeal microbial flora and its ability to breach infection-control barrier sheaths. The presence of bacterial colonies on an agar plate was used to determine bacterial contamination and the presence of any growth indicated failure of the barrier envelope. Before clinical placement of the plates, quality review of the PSP plates revealed defects in the integrity of 4 barrier envelopes most likely caused by forceps-related damage or failure to achieve a uniform seal during manufacturing. These defects allowed substantial contamination. Contamination also occurred as a result of failure to extract the PSP plate from the barrier envelope cleanly. Of the 44 barriers with no obvious signs of a defect, 3 produced bacterial growth following culture. The authors concluded that digital sensor sheathed in barrier envelopes remain a potential source of contamination. PSP plates must be disinfected between removal from a contaminated barrier envelope (used in a patient) and placement in a new barrier envelope. In addition, placement into the barrier envelope should ideally be carried out under aseptic conditions. Finally, the integrity of each sealed barrier envelope must be verified visually. Copyright © 2012. Published by Mosby, Inc. All rights reserved.

Purification and crystallization of Vibrio fischeri CcdB and its complexes with fragments of gyrase and CcdA

International Nuclear Information System (INIS)

De Jonge, Natalie; Buts, Lieven; Vangelooven, Joris; Mine, Natacha; Van Melderen, Laurence; Wyns, Lode; Loris, Remy

2007-01-01

A CcdB homologue from V. fischeri was overexpressed in E. coli and purified. The free protein was crystallized, as were its complexes with fragments of E. coli and V. fischeri gyrase and with the F-plasmid CcdA C-terminal domain. The ccd toxin–antitoxin module from the Escherichia coli F plasmid has a homologue on the Vibrio fischeri integron. The homologue of the toxin (CcdB Vfi ) was crystallized in two different crystal forms. The first form belongs to space group I23 or I2 1 3, with unit-cell parameter a = 84.5 Å, and diffracts to 1.5 Å resolution. The second crystal form belongs to space group C2, with unit-cell parameters a = 58.5, b = 43.6, c = 37.5 Å, β = 110.0°, and diffracts to 1.7 Å resolution. The complex of CcdB Vfi with the GyrA14 Vfi fragment of V. fischeri gyrase crystallizes in space group P2 1 2 1 2 1 , with unit-cell parameters a = 53.5, b = 94.6, c = 58.1 Å, and diffracts to 2.2 Å resolution. The corresponding mixed complex with E. coli GyrA14 Ec crystallizes in space group C2, with unit-cell parameters a = 130.1, b = 90.8, c = 58.1 Å, β = 102.6°, and diffracts to 1.95 Å. Finally, a complex between CcdB Vfi and part of the F-plasmid antitoxin CcdA F crystallizes in space group P2 1 2 1 2 1 , with unit-cell parameters a = 46.9, b = 62.6, c = 82.0 Å, and diffracts to 1.9 Å resolution

Microelectronic test structures for CMOS technology

CERN Document Server

Ketchen, Mark B

2011-01-01

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

CERN Document Server

Wang, T.

2017-01-01

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

Follow-up study of children with cerebral coordination disturbance (CCD, Vojta).

Science.gov (United States)

Imamura, S; Sakuma, K; Takahashi, T

1983-01-01

713 children (from newborn to 12-month-old) with delayed motor development were carefully examined and classified into normal, very light cerebral coordination disturbance (CCD, Vojta), light CCD, moderate CCD, severe CCD, suspected cerebral palsy (CP) and other diseases at their first visit, and were followed up carefully. Finally, 89.0% of very light CCD, 71.4% of light CCD, 56.0% of moderate CCD and 30.0% of severe CCD developed into normal. 59.5% of moderate CCD and 45.5% of severe CCD among children who were given Vojta's physiotherapy developed into normal. The classification of cases with delayed motor development into very light, light, moderate and severe CCD based on the extent of abnormality in their postural reflexes is useful and well correlated with their prognosis. Treatment by Vojta's method seems to be efficient and helpful for young children with delayed motor development.

Purification and crystallization of Vibrio fischeri CcdB and its complexes with fragments of gyrase and CcdA

Energy Technology Data Exchange (ETDEWEB)

De Jonge, Natalie, E-mail: ndejonge@vub.ac.be; Buts, Lieven; Vangelooven, Joris [Department of Molecular and Cellular Interactions, VIB, Pleinlaan 2, 1050 Brussels (Belgium); Laboratorium voor Ultrastructuur, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels (Belgium); Mine, Natacha; Van Melderen, Laurence [Laboratoire de Génétique des Procaryotes, Institut de Biologie et de Médecine, Université Libre de Bruxelles, Gosselies (Belgium); Wyns, Lode; Loris, Remy [Department of Molecular and Cellular Interactions, VIB, Pleinlaan 2, 1050 Brussels (Belgium); Laboratorium voor Ultrastructuur, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels (Belgium)

2007-04-01

A CcdB homologue from V. fischeri was overexpressed in E. coli and purified. The free protein was crystallized, as were its complexes with fragments of E. coli and V. fischeri gyrase and with the F-plasmid CcdA C-terminal domain. The ccd toxin–antitoxin module from the Escherichia coli F plasmid has a homologue on the Vibrio fischeri integron. The homologue of the toxin (CcdB{sub Vfi}) was crystallized in two different crystal forms. The first form belongs to space group I23 or I2{sub 1}3, with unit-cell parameter a = 84.5 Å, and diffracts to 1.5 Å resolution. The second crystal form belongs to space group C2, with unit-cell parameters a = 58.5, b = 43.6, c = 37.5 Å, β = 110.0°, and diffracts to 1.7 Å resolution. The complex of CcdB{sub Vfi} with the GyrA14{sub Vfi} fragment of V. fischeri gyrase crystallizes in space group P2{sub 1}2{sub 1}2{sub 1}, with unit-cell parameters a = 53.5, b = 94.6, c = 58.1 Å, and diffracts to 2.2 Å resolution. The corresponding mixed complex with E. coli GyrA14{sub Ec} crystallizes in space group C2, with unit-cell parameters a = 130.1, b = 90.8, c = 58.1 Å, β = 102.6°, and diffracts to 1.95 Å. Finally, a complex between CcdB{sub Vfi} and part of the F-plasmid antitoxin CcdA{sub F} crystallizes in space group P2{sub 1}2{sub 1}2{sub 1}, with unit-cell parameters a = 46.9, b = 62.6, c = 82.0 Å, and diffracts to 1.9 Å resolution.

Large area CMOS image sensors

International Nuclear Information System (INIS)

Turchetta, R; Guerrini, N; Sedgwick, I

2011-01-01

CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

Advancing the Technology of Monolithic CMOS detectors for their use as X-ray Imaging Spectrometers

Science.gov (United States)

Kenter, Almus

The Smithsonian Astrophysical Observatory (SAO) proposes a two year program to further advance the scientific capabilities of monolithic CMOS detectors for use as x-ray imaging spectrometers. This proposal will build upon the progress achieved with funding from a previous APRA proposal that ended in 2013. As part of that previous proposal, x- ray optimized, highly versatile, monolithic CMOS imaging detectors and technology were developed and tested. The performance and capabilities of these devices were then demonstrated, with an emphasis on the performance advantages these devices have over CCDs and other technologies. The developed SAO/SRI-Sarnoff CMOS devices incorporate: Low noise, high sensitivity ("gain") pixels; Highly parallel on-chip signal chains; Standard and very high resistivity (30,000Ohm-cm) Si; Back-Side thinning and passivation. SAO demonstrated the performance benefits of each of these features in these devices. This new proposal high-lights the performance of this previous generation of devices, and segues into new technology and capability. The high sensitivity ( 135uV/e) 6 Transistor (6T) Pinned Photo Diode (PPD) pixels provided a large charge to voltage conversion gain to the detect and resolve even small numbers of photo electrons produced by x-rays. The on-chip, parallel signal chain processed an entire row of pixels in the same time that a CCD requires to processes a single pixel. The resulting high speed operation ( 1000 times faster than CCD) provide temporal resolution while mitigating dark current and allowed room temperature operation. The high resistivity Si provided full (over) depletion for thicker devices which increased QE for higher energy x-rays. In this proposal, SAO will investigate existing NMOS and existing PMOS devices as xray imaging spectrometers. Conventional CMOS imagers are NMOS. NMOS devices collect and measure photo-electrons. In contrast, PMOS devices collect and measure photo-holes. PMOS devices have various

Noise characteristics of neutron images obtained by cooled CCD device

International Nuclear Information System (INIS)

Taniguchi, Ryoichi; Sasaki, Ryoya; Okuda, Shuichi; Okamoto, Ken-Ichi; Ogawa, Yoshihiro; Tsujimoto, Tadashi

2009-01-01

The noise characteristics of a cooled CCD device induced by neutron and gamma ray irradiation have been investigated. In the cooled CCD images, characteristic white spot noises (CCD noise) frequently appeared, which have a shape like a pixel in most cases and their brightness is extremely high compared with that of the image pattern. They could be divided into the two groups, fixed pattern noise (FPN) and random noise. The former always appeared in the same position in the image and the latter appeared at any position. In the background image, nearly all of the CCD noises were found to be the FPN, while many of them were the random noise during the irradiation. The random CCD noises increased with irradiation and decreased soon after the irradiation. In the case of large irradiation, a part of the CCD noise remained as the FPN. These facts suggest that the CCD noise is a phenomenon strongly relating to radiation damage of the CCD device.

Optoelectronic circuits in nanometer CMOS technology

CERN Document Server

Atef, Mohamed

2016-01-01

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

Electrical Interconnections Through CMOS Wafers

DEFF Research Database (Denmark)

Rasmussen, Frank Engel

2003-01-01

Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

CMOS test and evaluation a physical perspective

CERN Document Server

Bhushan, Manjul

2015-01-01

This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

Absorbed dose by a CMOS in radiotherapy

International Nuclear Information System (INIS)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

2011-10-01

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

CCD Astrophotography High-Quality Imaging from the Suburbs

CERN Document Server

Stuart, Adam

2006-01-01

This is a reference book for amateur astronomers who have become interested in CCD imaging. Those glorious astronomical images found in astronomy magazines might seem out of reach to newcomers to CCD imaging, but this is not the case. Great pictures are attainable with modest equipment. Adam Stuart’s many beautiful images, reproduced in this book, attest to the quality of – initially – a beginner’s efforts. Chilled-chip astronomical CCD-cameras and software are also wonderful tools for cutting through seemingly impenetrable light-pollution. CCD Astrophotography from the Suburbs describes one man’s successful approach to the problem of getting high-quality astronomical images under some of the most light-polluted conditions. Here is a complete and thoroughly tested program that will help every CCD-beginner to work towards digital imaging of the highest quality. It is equally useful to astronomers who have perfect observing conditions, as to those who have to observe from light-polluted city skies.

Neutron absorbed dose in a pacemaker CMOS

International Nuclear Information System (INIS)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

2012-01-01

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2012-06-15

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

Absorbed dose by a CMOS in radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-10-15

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Wideband CMOS receivers

CERN Document Server

Oliveira, Luis

2015-01-01

This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

Custom CCD for adaptive optics applications

Science.gov (United States)

Downing, Mark; Arsenault, Robin; Baade, Dietrich; Balard, Philippe; Bell, Ray; Burt, David; Denney, Sandy; Feautrier, Philippe; Fusco, Thierry; Gach, Jean-Luc; Diaz Garcia, José Javier; Guillaume, Christian; Hubin, Norbert; Jorden, Paul; Kasper, Markus; Meyer, Manfred; Pool, Peter; Reyes, Javier; Skegg, Michael; Stadler, Eric; Suske, Wolfgang; Wheeler, Patrick

2006-06-01

ESO and JRA2 OPTICON have funded e2v technologies to develop a compact packaged Peltier cooled 24 μm square 240x240 pixels split frame transfer 8-output back-illuminated L3Vision CCD3, L3Vision CCD for Adaptive Optic Wave Front Sensor (AO WFS) applications. The device is designed to achieve sub-electron read noise at frame rates from 25 Hz to 1,500 Hz and dark current lower than 0.01 e-/pixel/frame. The development has many unique features. To obtain high frame rates, multi-output EMCCD gain registers and metal buttressing of row clock lines are used. The baseline device is built in standard silicon. In addition, a split wafer run has enabled two speculative variants to be built; deep depletion silicon devices to improve red response and devices with an electronic shutter to extend use to Rayleigh and Pulsed Laser Guide Star applications. These are all firsts for L3Vision CCDs. The designs of the CCD and Peltier package have passed their reviews and fabrication has begun. This paper will describe the progress to date, the requirements and the design of the CCD and compact Peltier package, technology trade-offs, schedule and proposed test plan. High readout speed, low noise and compactness (requirement to fit in confined spaces) provide special challenges to ESO's AO variant of its NGC, New General detector Controller to drive this CCD. This paper will describe progress made on the design of the controller to meet these special needs.

THE ACCURACY OF Hβ CCD PHOTOMETRY

Directory of Open Access Journals (Sweden)

C. Kim

1994-12-01

Full Text Available We have undertaken CCD observations of field standard stars with Hβ photometric system to investigate the reliability of Hβ CCD photometry. Flat fielding with dome flat and sky flat for Hβw and Hβn filter was compared with that of B filter in UBV system and, from these, we have not found any difference. It was confirmed that there is a good linear relationship between our Hβ values observed with 2.3m reflector and standard values. However, Hβ values observed with 60cm reflector at Sobaeksan Astronomy Observatory showed very poor relationship. To investigate the accuracy of Hβ CCD photometry for fainter objects, open cluster NGC2437 was observed and reduced with DoPHOT, and the results were compared with those for photoelectric photometry of Stetson (1981.

Correlation and image compression for limited-bandwidth CCD.

Energy Technology Data Exchange (ETDEWEB)

Thompson, Douglas G.

2005-07-01

As radars move to Unmanned Aerial Vehicles with limited-bandwidth data downlinks, the amount of data stored and transmitted with each image becomes more significant. This document gives the results of a study to determine the effect of lossy compression in the image magnitude and phase on Coherent Change Detection (CCD). We examine 44 lossy compression types, plus lossless zlib compression, and test each compression method with over 600 CCD image pairs. We also derive theoretical predictions for the correlation for most of these compression schemes, which compare favorably with the experimental results. We recommend image transmission formats for limited-bandwidth programs having various requirements for CCD, including programs which cannot allow performance degradation and those which have stricter bandwidth requirements at the expense of CCD performance.

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

Typical effects of laser dazzling CCD camera

Science.gov (United States)

Zhang, Zhen; Zhang, Jianmin; Shao, Bibo; Cheng, Deyan; Ye, Xisheng; Feng, Guobin

2015-05-01

In this article, an overview of laser dazzling effect to buried channel CCD camera is given. The CCDs are sorted into staring and scanning types. The former includes the frame transfer and interline transfer types. The latter includes linear and time delay integration types. All CCDs must perform four primary tasks in generating an image, which are called charge generation, charge collection, charge transfer and charge measurement. In camera, the lenses are needed to input the optical signal to the CCD sensors, in which the techniques for erasing stray light are used. And the electron circuits are needed to process the output signal of CCD, in which many electronic techniques are used. The dazzling effects are the conjunct result of light distribution distortion and charge distribution distortion, which respectively derive from the lens and the sensor. Strictly speaking, in lens, the light distribution is not distorted. In general, the lens are so well designed and fabricated that its stray light can be neglected. But the laser is of much enough intensity to make its stray light obvious. In CCD image sensors, laser can induce a so large electrons generation. Charges transfer inefficiency and charges blooming will cause the distortion of the charge distribution. Commonly, the largest signal outputted from CCD sensor is restricted by capability of the collection well of CCD, and can't go beyond the dynamic range for the subsequent electron circuits maintaining normal work. So the signal is not distorted in the post-processing circuits. But some techniques in the circuit can make some dazzling effects present different phenomenon in final image.

Contribution of the Chromosomal ccdAB Operon to Bacterial Drug Tolerance.

Science.gov (United States)

Gupta, Kritika; Tripathi, Arti; Sahu, Alishan; Varadarajan, Raghavan

2017-10-01

One of the first identified and best-studied toxin-antitoxin (TA) systems in Escherichia coli is the F-plasmid-based CcdAB system. This system is involved in plasmid maintenance through postsegregational killing. More recently, ccdAB homologs have been found on the chromosome, including in pathogenic strains of E. coli and other bacteria. However, the functional role of chromosomal ccdAB genes, if any, has remained unclear. We show that both the native ccd operon of the E. coli O157 strain ( ccd O157 ) and the ccd operon from the F plasmid ( ccd F ), when inserted on the E. coli chromosome, lead to protection from cell death under multiple antibiotic stress conditions through formation of persisters, with the O157 operon showing higher protection. While the plasmid-encoded CcdB toxin is a potent gyrase inhibitor and leads to bacterial cell death even under fully repressed conditions, the chromosomally encoded toxin leads to growth inhibition, except at high expression levels, where some cell death is seen. This was further confirmed by transiently activating the chromosomal ccd operon through overexpression of an active-site inactive mutant of F-plasmid-encoded CcdB. Both the ccd F and ccd O157 operons may share common mechanisms for activation under stress conditions, eventually leading to multidrug-tolerant persister cells. This study clearly demonstrates an important role for chromosomal ccd systems in bacterial persistence. IMPORTANCE A large number of free-living and pathogenic bacteria are known to harbor multiple toxin-antitoxin systems, on plasmids as well as on chromosomes. The F-plasmid CcdAB system has been extensively studied and is known to be involved in plasmid maintenance. However, little is known about the function of its chromosomal counterpart, found in several pathogenic E. coli strains. We show that the native chromosomal ccd operon of the E. coli O157 strain is involved in drug tolerance and confers protection from cell death under multiple

A CMOS Morlet Wavelet Generator

Directory of Open Access Journals (Sweden)

A. I. Bautista-Castillo

2017-04-01

Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

CMOS image sensors: State-of-the-art

Science.gov (United States)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

All-CMOS night vision viewer with integrated microdisplay

Science.gov (United States)

Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

2014-02-01

The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

Assessment of endodontically treated teeth by using different radiographic methods: an ex vivo comparison between CBCT and other radiographic techniques

Energy Technology Data Exchange (ETDEWEB)

Demiralp, Kemal Oeaguer; Uecok, Oezlem [Dept. of Dentomaxillofacial Radiology, Faculty of Dentistry, Gazi University, Ankara (Turkmenistan); Kamburoglu, Kivanc [Dept. of Dentomaxillofacial Radiology, Faculty of Dentistry, Ankara University, Ankara (Turkmenistan); Selcen Yuesel, Kahraman Guengoer [Dept. of Biostatistics, Faculty of Medicine, Ankara University, Ankara (Turkmenistan); Demiralp, Gokcen [Dept. of Endodontics, Tepebasi Dental Health Center, Ankara (Turkmenistan)

2012-09-15

To compare different radiographic methods for assessing endodontically treated teeth. Root canal treatments were applied in 120 extracted mandibular teeth, which were divided into four groups: (1) ideal root canal treatment (60 teeth), (2) insufficient lateral condensation (20 teeth), (3) root canals filled short of the apex (20 teeth), (4) overfilled root canal treatment (20 teeth). The teeth were imaged using intraoral film, panoramic film, digital intraoral systems (CCD and PSP), CCD obtained with portable X-ray source, digital panoramic, and CBCT images obtained at 0.3 mm{sup 3} and 0.2 mm'3 voxel size. Images were evaluated separately by three observers, twice. Kappa coefficients were calculated. The percentage of correct readings obtained from each modality was calculated and compared using a t-test (p<0.05). The intra-observer kappa for each observer ranged between 0.327 and 0.849. The inter-observer kappa for each observer for both readings ranged between 0.312 and 0.749. For the ideal root canal treatment group, CBCT with 0.2 mm{sup 3} voxel images revealed the best results. For insufficient lateral condensation, the best readings were found with periapical film followed by CCD and PSP. The assessment of teeth with root canals filled short of the apex showed the highest percentage of correct readings by CBCT and CCD. For the overfilled canal treatment group, PSP images and conventional periapical film radiographs had the best scores. CBCT was found to be successful in the assessment of teeth with ideal root canal treatment and teeth with canals filled short of the apex.

Immunomodulatory effects of herbal formula of astragalus polysaccharide (APS) and polysaccharopeptide (PSP) in mice with lung cancer.

Science.gov (United States)

Zhou, Xing; Liu, Zijing; Long, Tingting; Zhou, Lijng; Bao, Yixi

2018-01-01

This study is to investigate the immunomodulatory effects of the herbal formula of astragalus polysaccharide (APS) and polysaccharopeptide (PSP) in mouse models of immunosuppression and lung cancer. Immune parameters were recorded for these model mice. Peripheral white blood cells (WBC) were detected with the automatic blood cell analyzer. Spleen and thymus indices, and tumor inhibition ratio were obtained. Percentage of peripheral blood CD4 + and CD8 + T lymphocytes were detected by flow cytometry. Serum levels of Th1 (IL-2, TNF, and IFN-γ), Th2 (IL-4, IL-6, and IL-10), and Th17 (IL-17A) were detected with the BD cytometric bead array (CBA) mouseTh1/Th2/Th17 cytokine kit. Compared with the NS group, the PSP and APS herbal formula significantly improved the WBC, thymus index, spleen index, CD4 + /CD8 + ratio, TNF, IFN-γ, IL-2, andIL-17Ainimmunosuppressivemice and lung cancer mice (PAPS herbal formula group (PAPS herbal formula group induced comparable tumor inhibiting effect with the AMD group (23.3% and 24.1%, respectively). The PSP+APS herbal formula have immunomodulatory effects and anti-tumor activity in mice with of lung cancer. Copyright © 2017 Elsevier B.V. All rights reserved.

[18F]FDDNP PET in Tauopathies: Correlation to post mortem Pathology in a Case of Progressive Supranuclear Palsy (PSP)

Science.gov (United States)

Villegas, Brendon Josef

This investigation of [18F]FDDNP was conducted in an effort to confirm the presence of disease in a patient with Progressive Supranuclear Palsy (PSP) and to correlate the ante mortem PET scan results to the post mortem pathology. The immunohistochemical and immunofluorescent staining of Paired Helical Filamentous (PHF) tau (AT8) and Amyloid Beta (6F/3D) misfolded proteins demonstrated a widespread deposition in the cortical and subcortical nuclei, the white matter, cerebellar white matter and the medulla oblongata. The in vitro autoradiography demonstrated a neocortical signal comprised of well-delineated amyloid beta in the nucleated layers I/II and hyperphosphorylated tau in the deeper layers III through VI. The autoradiography was well correlated with the immunohistochemical staining in adjacent tissue slides. The binding of the parametric [ 18F]FDDNP distribution volume ratio (DVR) correlated well (Spearman's rho = 0.962, p = .004) with the deposition of tau but not with the presence of amyloid beta (Spearman's rho = -0.829, p = .041). The [ 18F]FDDNP DVR signal appears to be primarily due to the large amount of bound hyperphosphorylated tau (p-tau) and the amyloid beta negligibly contributes to the total signal. Unlabeled FDDNP was shown to bind to tau in the form of globose tangles in the rostral ventromedial medulla as confirmed with both Thioflavin S and PHF-tau Immunofluorescence. The binding of [18F]FDDNP to the human neuroanatomy was investigated in two cohorts of distinct tauopathies and compared to the binding in two tau-negative cohorts against control patients. A cohort of PSP patients (n = 12) with a mean age of 63.8 years and a cohort of Chronic Traumatic Encephalopathy (CTE) patients (n = 14) with a mean age of 58.1 years are both characterized by the presence of various degrees of tau pathology in their brains. The cohort of Parkinson's Disease (PD) patients (n = 16) with a mean age of 63.2 years is initially characterized by clinical symptoms

Finanční analýza PSP enegineering, a. s.

OpenAIRE

Červinková, Hana

2007-01-01

The purpose of this work is to carry out financial analysis of a manufacturing company which is aimed at discovering of its total financial health, present progress and is also trying to evaluate future perspective. In the methodological part there are selected methods and procedures of financial analysis characterized which are applied also in the practical part. This part is composed of several sections. In the introduction the company PSP engineering a.s. is introduced, also its focus and ...

Beyond CMOS nanodevices 1

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

Beyond CMOS nanodevices 2

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

High-Voltage Clock Driver for Photon-Counting CCD Characterization

Science.gov (United States)

Baker, Robert

2013-01-01

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

Variation-aware advanced CMOS devices and SRAM

CERN Document Server

Shin, Changhwan

2016-01-01

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

Design optimization of radiation-hardened CMOS integrated circuits

International Nuclear Information System (INIS)

1975-01-01

Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

CMOS dot matrix microdisplay

Science.gov (United States)

Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

2011-03-01

Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

15 CFR 740.19 - Consumer Communications Devices (CCD).

Science.gov (United States)

2010-01-01

... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Consumer Communications Devices (CCD... EXCEPTIONS § 740.19 Consumer Communications Devices (CCD). (a) Authorization. This License Exception... controllers designed for chemical processing) designated EAR99; (4) Graphics accelerators and graphics...

CCD image sensor induced error in PIV applications

Science.gov (United States)

Legrand, M.; Nogueira, J.; Vargas, A. A.; Ventas, R.; Rodríguez-Hidalgo, M. C.

2014-06-01

The readout procedure of charge-coupled device (CCD) cameras is known to generate some image degradation in different scientific imaging fields, especially in astrophysics. In the particular field of particle image velocimetry (PIV), widely extended in the scientific community, the readout procedure of the interline CCD sensor induces a bias in the registered position of particle images. This work proposes simple procedures to predict the magnitude of the associated measurement error. Generally, there are differences in the position bias for the different images of a certain particle at each PIV frame. This leads to a substantial bias error in the PIV velocity measurement (˜0.1 pixels). This is the order of magnitude that other typical PIV errors such as peak-locking may reach. Based on modern CCD technology and architecture, this work offers a description of the readout phenomenon and proposes a modeling for the CCD readout bias error magnitude. This bias, in turn, generates a velocity measurement bias error when there is an illumination difference between two successive PIV exposures. The model predictions match the experiments performed with two 12-bit-depth interline CCD cameras (MegaPlus ES 4.0/E incorporating the Kodak KAI-4000M CCD sensor with 4 megapixels). For different cameras, only two constant values are needed to fit the proposed calibration model and predict the error from the readout procedure. Tests by different researchers using different cameras would allow verification of the model, that can be used to optimize acquisition setups. Simple procedures to obtain these two calibration values are also described.

CCD image sensor induced error in PIV applications

International Nuclear Information System (INIS)

Legrand, M; Nogueira, J; Vargas, A A; Ventas, R; Rodríguez-Hidalgo, M C

2014-01-01

The readout procedure of charge-coupled device (CCD) cameras is known to generate some image degradation in different scientific imaging fields, especially in astrophysics. In the particular field of particle image velocimetry (PIV), widely extended in the scientific community, the readout procedure of the interline CCD sensor induces a bias in the registered position of particle images. This work proposes simple procedures to predict the magnitude of the associated measurement error. Generally, there are differences in the position bias for the different images of a certain particle at each PIV frame. This leads to a substantial bias error in the PIV velocity measurement (∼0.1 pixels). This is the order of magnitude that other typical PIV errors such as peak-locking may reach. Based on modern CCD technology and architecture, this work offers a description of the readout phenomenon and proposes a modeling for the CCD readout bias error magnitude. This bias, in turn, generates a velocity measurement bias error when there is an illumination difference between two successive PIV exposures. The model predictions match the experiments performed with two 12-bit-depth interline CCD cameras (MegaPlus ES 4.0/E incorporating the Kodak KAI-4000M CCD sensor with 4 megapixels). For different cameras, only two constant values are needed to fit the proposed calibration model and predict the error from the readout procedure. Tests by different researchers using different cameras would allow verification of the model, that can be used to optimize acquisition setups. Simple procedures to obtain these two calibration values are also described. (paper)

On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

Directory of Open Access Journals (Sweden)

Hongyi Mi

2017-03-01

Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

Science.gov (United States)

Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

2017-12-01

With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

Active Pixel Sensors: Are CCD's Dinosaurs?

Science.gov (United States)

Fossum, Eric R.

1993-01-01

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

PSP SAR interferometry monitoring of ground and structure deformations in the archeological site of Pompeii

Science.gov (United States)

Costantini, Mario; Francioni, Elena; Paglia, Luca; Minati, Federico; Margottini, Claudio; Spizzichino, Daniele; Trigila, Alessandro; Iadanza, Carla; De Nigris, Bruno

2016-04-01

The "Major Project Pompeii" (MPP) is a great collective commitment of different institututions and people to set about solving the serious problem of conservation of the largest archeological sites in the world. The ancient city of Pompeii with its 66 hectares, 44 of which are excaveted, is divided into 9 regiones (district), subdivided in 118 insulae (blocks) and almost 1500 domus (houses), and is Unesco site since 1996. The Italian Ministry for Heritage and Cultural Activities and Tourism (MiBACT) and Finmeccanica Group have sealed an agreement whereby the Finmeccanica Group will donate innovative technologies and services for monitoring and protecting the archaeological site of Pompeii. Moreover, the Italian Institute for Environment Protection and Research (ISPRA) - Geological Survey of Italy, was also involved to support the ground based analysis and interpretation of the measurements provided by the industrial team, in order to promote an interdisciplinary approach. In this work, we will focus on ground deformation measurements obtained by satellite SAR interferometry and on their interpretation. The satellite monitoring service is based on the processing of COSMO-SkyMed Himage data by the e-Geos proprietary Persistent Scatterer Pair (PSP) SAR interferometry technology. The PSP technique is a proven SAR interferometry method characterized by the fact of exploiting in the processing only the relative properties between close points (pairs) in order to overcome atmospheric artifacts (which are one of the main problems of SAR interferometry). Validations analyses showed that this technique applied to COSMO-SkyMed Himage data is able to retrieve very dense (except of course on vegetated or cultivated areas) millimetric deformation measurements with sub-metric localization. By means of the COSMO-SkyMed PSP SAR interferometry processing, a historical analysis of the ground and structure deformations occurred over the entire archaeological site of Pompeii in the

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

KAUST Repository

Saffih, Faycal

2012-06-01

In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

A Standard CMOS Humidity Sensor without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

Fully CMOS-compatible titanium nitride nanoantennas

Energy Technology Data Exchange (ETDEWEB)

Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

2016-02-01

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-11-15

The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

Nanometer CMOS ICs from basics to ASICs

CERN Document Server

J M Veendrick, Harry

2017-01-01

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

Solution structure and elevator mechanism of the membrane electron transporter CcdA.

Science.gov (United States)

Zhou, Yunpeng; Bushweller, John H

2018-02-01

Membrane oxidoreductase CcdA plays a central role in supplying reducing equivalents from the bacterial cytoplasm to the envelope. It transports electrons across the membrane using a single pair of cysteines by a mechanism that has not yet been elucidated. Here we report an NMR structure of the Thermus thermophilus CcdA (TtCcdA) in an oxidized and outward-facing state. CcdA consists of two inverted structural repeats of three transmembrane helices (2 × 3-TM). We computationally modeled and experimentally validated an inward-facing state, which suggests that CcdA uses an elevator-type movement to shuttle the reactive cysteines across the membrane. CcdA belongs to the LysE superfamily, and thus its structure may be relevant to other LysE clan transporters. Structure comparisons of CcdA, semiSWEET, Pnu, and major facilitator superfamily (MFS) transporters provide insights into membrane transporter architecture and mechanism.

A PSP-based small-signal MOSFET model for both quasi-static and nonquasi-static operations

NARCIS (Netherlands)

Aarts, A.C.T.; Smit, G.D.J.; Scholten, A.J.; Klaassen, D.B.M.

2008-01-01

In this paper, a small-signal MOSFET model is described, which takes the local effects of both velocity saturation and transverse mobility reduction into account. The model is based on the PSP model and is valid for both quasi-static and nonquasi-static (NQS) operations. Recently, it has been found

CMOS-sensors for energy-resolved X-ray imaging

International Nuclear Information System (INIS)

Doering, D.; Amar-Youcef, S.; Deveaux, M.; Linnik, B.; Müntz, C.; Stroth, Joachim; Baudot, J.; Dulinski, W.; Kachel, M.

2016-01-01

Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ''color sensitive' X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors

CCD camera eases the control of a soda recovery boiler; CCD-kamera helpottaa soodakattilan valvontaa

Energy Technology Data Exchange (ETDEWEB)

Kinnunen, L.

2001-07-01

Fortum Technology has developed a CCD firebox camera, based on semiconductor technology, enduring hard conditions of soda recovery boiler longer than traditional cameras. The firebox camera air- cooled and the same air is pressed over the main lens so it remains clean despite of the alkaline liquor splashing around in the boiler. The image of the boiler is transferred through the main lens, image transfer lens and a special filter, mounted inside the camera tube, into the CCD camera. The first CCD camera system has been in use since 1999 in Sunila pulp mill in Kotka, owned by Myllykoski Oy and Enso Oyj. The mill has two medium-sized soda recovery boilers. The amount of black liquor, formed daily, is about 2000 tons DS, which is more than enough for the heat generation. Even electric power generation exceeds sometimes the demand, so the surplus power can be sold out. Black liquor is sprayed inside the soda recovery boiler with high pressure. The liquor form droplets in the boiler, the temperature of which is over 1000 deg C. A full-hot pile is formed at the bottom of the boiler after burning. The size and shape of the pile effect on the efficiency and the emissions of the boiler. The camera has operated well.

CCD camera system for use with a streamer chamber

International Nuclear Information System (INIS)

Angius, S.A.; Au, R.; Crawley, G.C.; Djalali, C.; Fox, R.; Maier, M.; Ogilvie, C.A.; Molen, A. van der; Westfall, G.D.; Tickle, R.S.

1988-01-01

A system based on three charge-coupled-device (CCD) cameras is described here. It has been used to acquire images from a streamer chamber and consists of three identical subsystems, one for each camera. Each subsystem contains an optical lens, CCD camera head, camera controller, an interface between the CCD and a microprocessor, and a link to a minicomputer for data recording and on-line analysis. Image analysis techniques have been developed to enhance the quality of the particle tracks. Some steps have been made to automatically identify tracks and reconstruct the event. (orig.)

High-speed nonvolatile CMOS/MNOS RAM

International Nuclear Information System (INIS)

Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

1979-01-01

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

Science.gov (United States)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

JPL CMOS Active Pixel Sensor Technology

Science.gov (United States)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2014-01-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa

2017-11-23

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

CCD-based X-ray detectors for X-ray diffraction studies

International Nuclear Information System (INIS)

Ito, K.; Amemiya, Y.

1999-01-01

CCD-based X-ray detectors are getting to be used for X-ray diffraction studies especially in the studies where real time (automated) measurements and time-resolved measurements are required. Principles and designs of two typical types of CCD-based detectors are described; one is ths system in which x-ray image intensifiers are coupled to maximize the detective quantum efficiency for time-resolved measurements, and the other is the system in which tapered optical fibers are coupled for the reduction of the image into the CCD, which is optimized for automated measurements for protein crystallography. These CCD-based X-ray detectors have an image distortion and non-uniformity of response to be corrected by software. Correction schemes which we have developed are also described. (author)

Batch Processing of CMOS Compatible Feedthroughs

DEFF Research Database (Denmark)

Rasmussen, F.E.; Heschel, M.; Hansen, Ole

2003-01-01

. The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...... of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved....

Image differencing using masked CCD

International Nuclear Information System (INIS)

Rushbrooke, J.G.; Ansorge, R.E.; Webber, C.J. St. J.

1987-01-01

A charge coupled device has some of its ''pixels'' masked by a material which is opaque to the radiation to which the device is to be exposed, each masked region being employed as a storage zone into which the charge pattern from the unmasked pixels can be transferred to enable a subsequent charge pattern to be established on further exposure of the unmasked pixels. The components of the resulting video signal corresponding to the respective charge patterns read-out from the CCD are subtracted to produce a video signal corresponding to the difference between the two images which formed the respective charge patterns. Alternate rows of pixels may be masked, or chequer-board pattern masking may be employed. In an X-ray imaging system the CCD is coupled to image intensifying and converting means. (author)

Technology CAD for germanium CMOS circuit

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

2006-12-15

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

Technology CAD for germanium CMOS circuit

International Nuclear Information System (INIS)

Saha, A.R.; Maiti, C.K.

2006-01-01

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

Resistor Extends Life Of Battery In Clocked CMOS Circuit

Science.gov (United States)

Wells, George H., Jr.

1991-01-01

Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

Carbon Nanotube Integration with a CMOS Process

Science.gov (United States)

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

2010-01-01

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

A CCD portrait of Comet P/Tempel 2

International Nuclear Information System (INIS)

Jewitt, D.; Luu, J.

1989-01-01

The development of activity in Comet P/Tempel 2 is studied from aphelion (R = 4 AU) to perihelion (R = 1.4 AU) using extensive time-series CCD photometry and CCD spectra. The comet undergoes a profound morphological change at R of about 2-2.5 AU, from a bare nucleus at larger distances to an active comet supporting a coma of gas and dust. Cyclic photometric variations with the period T = 8.95 + or - 0.01 hr. are present at all R, and are attributed to the rotation of the nucleus at this period. The nucleus is prolate (axes a:b:c = 1.9:1:1), a property shared with other nuclei studied using CCD photometry. Novel results include a limit on the bulk density of the nucleus, rho above 300 kg/cu m, and a 20-A-resolution CCD spectrum of the nucleus. Spatially and temporally resolved photometry is used to study the effects of nucleus rotation on the coma. The coma does not share the dramatic photometric variations shown by the nucleus. It possesses a steep surface-brightness distribution, which is attributable to progressive destruction of the coma grains with increasing space exposure. 41 refs

Depleted CMOS pixels for LHC proton–proton experiments

International Nuclear Information System (INIS)

Wermes, N.

2016-01-01

While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

KMAH index and separation of PSP-waves from streamer data

Science.gov (United States)

Mitrofanov, Georgy; Priimenko, Viatcheslav

2017-08-01

The presence of triplications (caustics) can be a serious problem in seismic data processing and analysis. The travel-time curve becomes multi-valued and the geometrical spreading correction factor tends to zero due to energy focusing. To select the regions of possible triplications (caustics) of travel-times, which can arise during the propagation of reflected seismic waves, we use the Keller-Maslov-Arnol'd-Hörmander (KMAH) index. The identification of such regions improves the selection of signals associated with target reflecting horizons and their use in solving various inverse dynamic problems, including amplitude-versus-offset (AVO) and full-waveform inversions. The importance of the KMAH index increases in 4D surveys when the structure of the model is already known, and it is necessary to conduct a detailed analysis of the shapes of seismic signals with increasing accuracy when solving inverse seismic problems. In addition, this index can be valuable when solving various marine seismic problems associated with single and converted waves, in particular with PSP-waves. The present work is dedicated to the separation of signals associated with this type of wave using surface marine seismic data. However, the proposed algorithm has a wider application. It is based on: (i) a priori information on the medium under study; (ii) ray tracing method. The ray tracing method enables the identification of the corresponding signals and the determination of the time and space intervals, in which such signals are most accurately traced. These intervals are used in the selection of target signals, particularly signals related to PSP-waves. In order to select optimal areas of observation with higher amplitudes of target signals, we use the τ -p transform. To improve the stability of the signal separation, KMAH index is used. This approach allows the elimination of possible triplications (caustics) in the travel-time curve from the selected intervals.

Programmable CCD imaging system for synchrotron radiation studies

International Nuclear Information System (INIS)

Rodricks, B.; Brizard, C.

1992-01-01

A real-time imaging system for x-ray detection has been developed. The CAMAC-based system has a Charge Coupled Device (CCD) as its active detection element. The electronics consist of a CAMAC-crate-based dedicated microprocessor coupled to arbitrary waveform generators, programmable timing, and ADC modules. The hardware flexibility achievable through this system enables one to use virtually any commercially available CCD. A dedicated CAMAC-based display driver allows for real-time imaging on a high-resolution color monitor. An optional front end consisting of a fiber-optic taper and a focusing optical lens system coupled to a phosphor screen allows for large area imaging. Further, programming flexibility, in which the detector can be used in different read-out modes, enables it to be exploited for time-resolved experiments. In one mode, sections of the CCD can be read-out with millisecond time-resolution and, in another, the use of the CCD as a storage device is exploited resulting in microsecond time-resolution. Three different CCDs with radically different read-out timings and waveforms have been tested: the TI 4849, a 39Ox584 pixel array; TC 215, a 1024x1O24 pixel array; and the TH 7883, a 576x384 pixel array. The TC 215 and TI 4849 are single-phase CCDs manufactured by Texas Instruments, and the TH 7883 is a four-phase device manufactured by Thomson-CSF. The CCD characterized for uniformity, charge transfer efficiency (CTE), linearity, and sensitivity is the TC215

Broadband image sensor array based on graphene-CMOS integration

Science.gov (United States)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

CMOS Cell Sensors for Point-of-Care Diagnostics

Science.gov (United States)

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

Characterization of a pnCCD for applications with synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Send, S., E-mail: send@physik.uni-siegen.de [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Abboud, A. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Hartmann, R.; Huth, M. [PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Leitenberger, W. [University of Potsdam, Department of Physics, Karl-Liebknecht-Straße 24/25, 14476 Potsdam (Germany); Pashniak, N. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Schmidt, J. [PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Strüder, L. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Max-Planck-Institut für extraterrestrische Physik, Giessenbachstraße, 85748 Garching (Germany); Pietsch, U. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany)

2013-05-21

In this work we study the response of a pnCCD by means of X-ray spectroscopy in the energy range between 6 keV and 20 keV and by Laue diffraction techniques. The analyses include measurements of characteristic detector parameters like energy resolution, count rate capability and effects of different gain settings. The limit of a single photon counting operation in white beam X-ray diffraction experiments is discussed with regard to the occurrence of pile-up events, for which the energy information about individual photons is lost. In case of monochromatic illumination the pnCCD can be used as a fast conventional CCD with a charge handling capacity (CHC) of about 300,000 electrons per pixel. If the CHC is exceeded, any surplus charge will spill to neighboring pixels perpendicular to the transfer direction due to electrostatic repulsion. The possibilities of increasing the number of storable electrons are investigated for different voltage settings by exposing a single pixel with X-rays generated by a microfocus X-ray source. The pixel binning mode is tested as an alternative approach that enables a pnCCD operation with significantly shorter readout times. -- Highlights: ► The pnCCD acts as a four-dimensional detector for white X-rays. ► Its performance for applications with synchrotron radiation is investigated. ► The pnCCD can be used for single photon counting and photon integration. ► The operation mode depends on the local frequencies of pile-up events. ► The pnCCD can be optimized for X-ray spectroscopy and X-ray imaging.

CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

CERN Document Server

Ghafar-Zadeh, Ebrahim

2010-01-01

The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

CMOS optimization for radiation hardness

International Nuclear Information System (INIS)

Derbenwick, G.F.; Fossum, J.G.

1975-01-01

Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

Software design of control system of CCD side-scatter lidar

Science.gov (United States)

Kuang, Zhiqiang; Liu, Dong; Deng, Qian; Zhang, Zhanye; Wang, Zhenzhu; Yu, Siqi; Tao, Zongming; Xie, Chenbo; Wang, Yingjian

2018-03-01

Because of the existence of blind zone and transition zone, the application of backscattering lidar in near-ground is limited. The side-scatter lidar equipped with the Charge Coupled Devices (CCD) can separate the transmitting and receiving devices to avoid the impact of the geometric factors which is exited in the backscattering lidar and, detect the more precise near-ground aerosol signals continuously. Theories of CCD side-scatter lidar and the design of control system are introduced. The visible control of laser and CCD and automatic data processing method of the side-scatter lidar are developed by using the software of Visual C #. The results which are compared with the calibration of the atmospheric aerosol lidar data show that signals from the CCD side- scatter lidar are convincible.

CMOS MEMS capacitive absolute pressure sensor

International Nuclear Information System (INIS)

Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

2013-01-01

This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

A new approach to modelling radiation noise in CCD's

International Nuclear Information System (INIS)

Chugg, A.; Hopkinson, G.

1998-01-01

The energy depositions reported by Monte Carlo electron-photon irradiation transport codes are subject to a random error due to the finite number of particle histories used to generate the results. These statistical variations, normally a nuisance, may also be identified with the real radiation noise effects experienced by CCD pixels in persistent radiation environments. This paper explores the practicability of such radiation noise modelling by applying the ACCEPT code from the ITS suite to the case of a shielded CCD exposed to an electron flux. The results are compared with those obtained in a subsequent electron irradiation of the CCD by a Van de Graaff accelerator

The interaction of DNA gyrase with the bacterial toxin CcdB

DEFF Research Database (Denmark)

Kampranis, S C; Howells, A J; Maxwell, A

1999-01-01

CcdB is a bacterial toxin that targets DNA gyrase. Analysis of the interaction of CcdB with gyrase reveals two distinct complexes. An initial complex (alpha) is formed by direct interaction between GyrA and CcdB; this complex can be detected by affinity column and gel-shift analysis, and has...... of this initial complex with ATP in the presence of GyrB and DNA slowly converts it to a second complex (beta), which has a lower rate of ATP hydrolysis and is unable to catalyse supercoiling. The efficiency of formation of this inactive complex is dependent on the concentrations of ATP and CcdB. We suggest...

Discriminação de variedades de citros em imagens CCD/CBERS-2 Discrimination of citrus varieties using CCD/CBERS-2 satellite imagery

Directory of Open Access Journals (Sweden)

Ieda Del'Arco Sanches

2008-02-01

Full Text Available O presente trabalho teve o objetivo de avaliar as imagens CCD/CBERS-2 quanto à possibilidade de discriminarem variedades de citros. A área de estudo localiza-se em Itirapina (SP e, para este estudo, foram utilizadas imagens CCD de três datas (30/05/2004, 16/08/2004 e 11/09/2004. Um modelo que integra os elementos componentes da cena citrícola sensoriada é proposto com o objetivo de explicar a variabilidade das respostas das parcelas de citros em imagens orbitais do tipo CCD/CBERS-2. Foram feitas classificações pelos algoritmos Isoseg e Maxver e, de acordo com o índice kappa, concluiu-se que é possível obterem-se exatidões qualificadas como muito boas, sendo que as melhores classificações foram conseguidas com imagens da estação seca.This paper was aimed at evaluating the possibility of discriminating citrus varieties in CCD imageries from CBERS-2 satellite ("China-Brazil Earth Resouces Satellite". The study area is located in Itirapina, São Paulo State. For this study, three CCD images from 2004 were acquired (May 30, August 16, and September 11. In order to acquire a better understanding and for explaining the variability of the spectral behavior of the citrus areas in orbital images (like as the CCD/CBERS-2 images a model that integrates the elements of the citrus scene is proposed and discussed. The images were classified by Isoseg and MaxVer classifiers. According to kappa index, it was possible to obtain classifications qualified as 'very good'. The best results were obtained with the images from the dry season.

A Single-Transistor Active Pixel CMOS Image Sensor Architecture

International Nuclear Information System (INIS)

Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

2012-01-01

A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

Self-calibrated humidity sensor in CMOS without post-processing.

Science.gov (United States)

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2012-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Self-Calibrated Humidity Sensor in CMOS without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

A self triggered intensified Ccd (Stic)

International Nuclear Information System (INIS)

Charon, Y.; Laniece, P.; Bendali, M.

1990-01-01

We are developing a new device based on the results reported previously of the successfull coincidence detection of β- particles with a high spatial resolution [1]. The novelty of the device consists in triggering an intensified CCD, i.e. a CCD coupled to an image intensifier (II), by an electrical signal collected from the II itself. This is a suitable procedure for detecting with high efficiency and high resolution low light rare events. The trigger pulse is obtained from the secondary electrons produced by multiplication in a double microchannel plate (MCP) and collected on the aluminized layer protecting the phosphor screen in the II. Triggering efficiencies up to 80% has been already achieved

Colony Collapse Disorder (CCD) and bee age impact honey bee pathophysiology.

Science.gov (United States)

vanEngelsdorp, Dennis; Traynor, Kirsten S; Andree, Michael; Lichtenberg, Elinor M; Chen, Yanping; Saegerman, Claude; Cox-Foster, Diana L

2017-01-01

Honey bee (Apis mellifera) colonies continue to experience high annual losses that remain poorly explained. Numerous interacting factors have been linked to colony declines. Understanding the pathways linking pathophysiology with symptoms is an important step in understanding the mechanisms of disease. In this study we examined the specific pathologies associated with honey bees collected from colonies suffering from Colony Collapse Disorder (CCD) and compared these with bees collected from apparently healthy colonies. We identified a set of pathological physical characteristics that occurred at different rates in CCD diagnosed colonies prior to their collapse: rectum distension, Malpighian tubule iridescence, fecal matter consistency, rectal enteroliths (hard concretions), and venom sac color. The multiple differences in rectum symptomology in bees from CCD apiaries and colonies suggest effected bees had trouble regulating water. To ensure that pathologies we found associated with CCD were indeed pathologies and not due to normal changes in physical appearances that occur as an adult bee ages (CCD colonies are assumed to be composed mostly of young bees), we documented the changes in bees of different ages taken from healthy colonies. We found that young bees had much greater incidences of white nodules than older cohorts. Prevalent in newly-emerged bees, these white nodules or cellular encapsulations indicate an active immune response. Comparing the two sets of characteristics, we determined a subset of pathologies that reliably predict CCD status rather than bee age (fecal matter consistency, rectal distension size, rectal enteroliths and Malpighian tubule iridescence) and that may serve as biomarkers for colony health. In addition, these pathologies suggest that CCD bees are experiencing disrupted excretory physiology. Our identification of these symptoms is an important first step in understanding the physiological pathways that underlie CCD and factors

Colony Collapse Disorder (CCD and bee age impact honey bee pathophysiology.

Directory of Open Access Journals (Sweden)

Dennis vanEngelsdorp

Full Text Available Honey bee (Apis mellifera colonies continue to experience high annual losses that remain poorly explained. Numerous interacting factors have been linked to colony declines. Understanding the pathways linking pathophysiology with symptoms is an important step in understanding the mechanisms of disease. In this study we examined the specific pathologies associated with honey bees collected from colonies suffering from Colony Collapse Disorder (CCD and compared these with bees collected from apparently healthy colonies. We identified a set of pathological physical characteristics that occurred at different rates in CCD diagnosed colonies prior to their collapse: rectum distension, Malpighian tubule iridescence, fecal matter consistency, rectal enteroliths (hard concretions, and venom sac color. The multiple differences in rectum symptomology in bees from CCD apiaries and colonies suggest effected bees had trouble regulating water. To ensure that pathologies we found associated with CCD were indeed pathologies and not due to normal changes in physical appearances that occur as an adult bee ages (CCD colonies are assumed to be composed mostly of young bees, we documented the changes in bees of different ages taken from healthy colonies. We found that young bees had much greater incidences of white nodules than older cohorts. Prevalent in newly-emerged bees, these white nodules or cellular encapsulations indicate an active immune response. Comparing the two sets of characteristics, we determined a subset of pathologies that reliably predict CCD status rather than bee age (fecal matter consistency, rectal distension size, rectal enteroliths and Malpighian tubule iridescence and that may serve as biomarkers for colony health. In addition, these pathologies suggest that CCD bees are experiencing disrupted excretory physiology. Our identification of these symptoms is an important first step in understanding the physiological pathways that underlie CCD and

Radiation-hardened bulk CMOS technology

International Nuclear Information System (INIS)

Dawes, W.R. Jr.; Habing, D.H.

1979-01-01

The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

CMOS/SOS processing

Science.gov (United States)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

Directory of Open Access Journals (Sweden)

Jose Luis Muñoz-Gamarra

2016-02-01

Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

Simulations of depleted CMOS sensors for high-radiation environments

CERN Document Server

Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

2017-01-01

After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2018-01-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.

2018-02-27

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

Prevention of CMOS latch-up by gold doping

International Nuclear Information System (INIS)

Dawes, W.R.; Derbenwick, G.F.

1976-01-01

CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

pnCCD for photon detection from near-infrared to X-rays

International Nuclear Information System (INIS)

Meidinger, Norbert; Andritschke, Robert; Hartmann, Robert; Herrmann, Sven; Holl, Peter; Lutz, Gerhard; Strueder, Lothar

2006-01-01

A pnCCD is a special type of charge-coupled device developed for spectroscopy and imaging of X-rays with high time resolution and quantum efficiency. Its most famous application is the operation on the XMM-Newton satellite, an X-ray astronomy mission that was launched by the European space agency in 1999. The excellent performance of the focal plane camera has been maintained for more than 6 years in orbit. The energy resolution in particular has shown hardly any degradation since launch. In order to satisfy the requirements of future X-ray astronomy missions as well as those of ground-based experiments, a new type of pnCCD has been developed. This 'frame-store pnCCD' shows an enhanced performance compared to the XMM-Newton type of pnCCD. Now, more options in device design and operation are available to tailor the detector to its respective application. Part of this concept is a programmable analog signal processor, which has been developed for the readout of the CCD signals. The electronic noise of the new detector has a value of only 2 electrons equivalent noise charge (ENC), which is less than half of the figure achieved for the XMM-Newton-type pnCCD. The energy resolution for the Mn-K α line at 5.9 keV is approximately 130 eV FWHM. We have close to 100% quantum efficiency for both low- and high-energy photon detection (e.g. the C-K line at 277 eV, and the Ge-K α line at 10 keV, respectively). Very high frame rates of 1000 images/s have been achieved due to the ultra-fast readout accomplished by the parallel architecture of the pnCCD and the analog signal processor. Excellent spectroscopic performance is shown even at the relatively high operating temperature of -25 deg. C that can be achieved by a Peltier cooler. The applications of the low-noise and fast pnCCD detector are not limited to the detection of X-rays. With an anti-reflective coating deposited on the photon entrance window, we achieve high quantum efficiency also for near-infrared and optical

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Toward CMOS image sensor based glucose monitoring.

Science.gov (United States)

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2012-09-07

Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

Construction, characterization and evaluation of the protective efficacy of the Streptococcus suis double mutant strain ΔSsPep/ΔSsPspC as a live vaccine candidate in mice.

Science.gov (United States)

Hu, Jin; You, Wujin; Wang, Bin; Hu, Xueying; Tan, Chen; Liu, Jinlin; Chen, Huanchun; Bei, Weicheng

2015-01-01

Streptococcus suis serotype 2 (S. suis 2) causes sepsis and meningitis in piglets and humans, and results in one of the most serious bacterial diseases affecting the production of commercial pigs around the world. Due to the failure of the current inactivated vaccine to protect against the disease, development of a new attenuated live vaccine against S. suis 2 by deleting essential virulence factors is urgently needed. We have previously reported the construction and characterization of an SsPep single gene deletion mutant strain ΔSsPep based on S. suis 2. Our previous results have shown that SsPep plays a critical role in the pathogenesis of S. suis 2. In this study, a precisely defined double-deletion mutant ΔSsPep/ΔSsPspC of S. suis 2 without antibiotic-resistance markers was constructed based on ΔSsPep, and the levels of virulence of the wild-type (WT) and ΔSsPep/ΔSsPspC were compared in a mouse experimental infection model. We demonstrated that the double mutant ΔSsPep/ΔSsPspC was less virulent than the WT, and could induce a noticeable antibody response. Analysis of IgG subclasses (IgG1 and IgG2a) indicated that both Th1 and Th2 responses were induced by ΔSsPep/ΔSsPspC, although the IgG2a (Th1) response predominated over the IgG1 (Th2) response. Moreover, ΔSsPep/ΔSsPspC could confer 90% protective efficacy against challenge with a lethal dose of fully virulent S. suis 2. Taken together, these data demonstrate that ΔSsPep/ΔSsPspC can be used as an effective live vaccine and provide a novel strategy against infection of S. suis 2. Copyright © 2014 Elsevier GmbH. All rights reserved.

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

Timing generator of scientific grade CCD camera and its implementation based on FPGA technology

Science.gov (United States)

Si, Guoliang; Li, Yunfei; Guo, Yongfei

2010-10-01

The Timing Generator's functions of Scientific Grade CCD Camera is briefly presented: it generates various kinds of impulse sequence for the TDI-CCD, video processor and imaging data output, acting as the synchronous coordinator for time in the CCD imaging unit. The IL-E2TDI-CCD sensor produced by DALSA Co.Ltd. use in the Scientific Grade CCD Camera. Driving schedules of IL-E2 TDI-CCD sensor has been examined in detail, the timing generator has been designed for Scientific Grade CCD Camera. FPGA is chosen as the hardware design platform, schedule generator is described with VHDL. The designed generator has been successfully fulfilled function simulation with EDA software and fitted into XC2VP20-FF1152 (a kind of FPGA products made by XILINX). The experiments indicate that the new method improves the integrated level of the system. The Scientific Grade CCD camera system's high reliability, stability and low power supply are achieved. At the same time, the period of design and experiment is sharply shorted.

Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology

NARCIS (Netherlands)

Dutta, Satadal

2017-01-01

Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit (IC) technology is the most commercially successful platform in modern electronic and control systems. So called "smart power" technologies such as Bipolar CMOS DMOS (BCD), combine the computational power of CMOS with high voltage

Design of CMOS imaging system based on FPGA

Science.gov (United States)

Hu, Bo; Chen, Xiaolai

2017-10-01

In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

Directory of Open Access Journals (Sweden)

Haitao Li

2016-12-01

Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

CCD characterization and measurements automation

Czech Academy of Sciences Publication Activity Database

Kotov, I.V.; Frank, J.; Kotov, A.I.; Kubánek, Petr; O´Connor, P.; Prouza, Michael; Radeka, V.; Takacs, P.

2012-01-01

Roč. 695, Dec (2012), 188-192 ISSN 0168-9002 R&D Projects: GA MŠk ME09052 Institutional research plan: CEZ:AV0Z10100502 Keywords : CCD * characterization * test automation Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics Impact factor: 1.142, year: 2012

E-Beam Effects on CMOS Active Pixel Sensors

International Nuclear Information System (INIS)

Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

2011-01-01

Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

International Nuclear Information System (INIS)

Yu Xiaomei; Tang Yaquan; Zhang Haitao

2008-01-01

This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

CMOS-compatible spintronic devices: a review

Science.gov (United States)

Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

2016-11-01

For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

Small Pixel Hybrid CMOS X-ray Detectors

Science.gov (United States)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

Design and Development of Multi-Purpose CCD Camera System with Thermoelectric Cooling: Hardware

Directory of Open Access Journals (Sweden)

Y.-W. Kang

2007-12-01

Full Text Available We designed and developed a multi-purpose CCD camera system for three kinds of CCDs; KAF-0401E(768×512, KAF-1602E(1536×1024, KAF-3200E(2184×1472 made by KODAK Co.. The system supports fast USB port as well as parallel port for data I/O and control signal. The packing is based on two stage circuit boards for size reduction and contains built-in filter wheel. Basic hardware components include clock pattern circuit, A/D conversion circuit, CCD data flow control circuit, and CCD temperature control unit. The CCD temperature can be controlled with accuracy of approximately 0.4° C in the max. range of temperature, Δ 33° C. This CCD camera system has with readout noise 6 e^{-}, and system gain 5 e^{-}/ADU. A total of 10 CCD camera systems were produced and our tests show that all of them show passable performance.

Study of x-ray CCD image sensor and application

Science.gov (United States)

Wang, Shuyun; Li, Tianze

2008-12-01

In this paper, we expounded the composing, specialty, parameter, its working process, key techniques and methods for charge coupled devices (CCD) twice value treatment. Disposal process for CCD video signal quantification was expatiated; X-ray image intensifier's constitutes, function of constitutes, coupling technique of X-ray image intensifier and CCD were analyzed. We analyzed two effective methods to reduce the harm to human beings when X-ray was used in the medical image. One was to reduce X-ray's radiation and adopt to intensify the image penetrated by X-ray to gain the same effect. The other was to use the image sensor to transfer the images to the safe area for observation. On this base, a new method was presented that CCD image sensor and X-ray image intensifier were combined organically. A practical medical X-ray photo electricity system was designed which can be used in the records and time of the human's penetrating images. The system was mainly made up with the medical X-ray, X-ray image intensifier, CCD vidicon with high resolution, image processor, display and so on. Its characteristics are: change the invisible X-ray into the visible light image; output the vivid images; short image recording time etc. At the same time we analyzed the main aspects which affect the system's resolution. Medical photo electricity system using X-ray image sensor can reduce the X-ray harm to human sharply when it is used in the medical diagnoses. At last we analyzed and looked forward the system's application in medical engineering and the related fields.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

Science.gov (United States)

Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

2018-04-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CMOS serial link for fully duplexed data communication

Science.gov (United States)

Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

1995-04-01

This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

2017-01-01

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

Data.gov (United States)

Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

CMOS Compressed Imaging by Random Convolution

OpenAIRE

Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

2009-01-01

We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

Experimental investigations of image quality in X-ray mammography with conventional screen film system (SFS), digital phosphor storage plate in/without magnification technique (CR) and digital CCD-technique (CCD)

International Nuclear Information System (INIS)

Schulz-Wendtland, R.; Aichinger, U.; Boehner, C.; Dobritz, M.; Wenkel, E.; Bautz, W.; Saebel, M.

2001-01-01

Comparison of image quality in X-ray mammography between conventional film screen film system (SFS), digital phosphor storage plate in and without magnification technique (CR) and digital CCD-technique (CCD). Radiograms of an RMI-mammography phantom were acquired using a conventional screen film system, three digital storage plate systems and two digital systems in CCD-technique. Additionally the radiograms of one digital phosphor storage plate system were post-processed regarding contrast and included in the comparison. The detectability of details was best with the digital mammography in CCD-technique. After confirming these promising results in clinical studies, digital mammography should be able to replace conventional screen film technique. (orig.)

The challenge of sCMOS image sensor technology to EMCCD

Science.gov (United States)

Chang, Weijing; Dai, Fang; Na, Qiyue

2018-02-01

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Modeling the impact of preflushing on CTE in proton irradiated CCD-based detectors

Science.gov (United States)

Philbrick, R. H.

2002-04-01

A software model is described that performs a "real world" simulation of the operation of several types of charge-coupled device (CCD)-based detectors in order to accurately predict the impact that high-energy proton radiation has on image distortion and modulation transfer function (MTF). The model was written primarily to predict the effectiveness of vertical preflushing on the custom full frame CCD-based detectors intended for use on the proposed Kepler Discovery mission, but it is capable of simulating many other types of CCD detectors and operating modes as well. The model keeps track of the occupancy of all phosphorous-silicon (P-V), divacancy (V-V) and oxygen-silicon (O-V) defect centers under every CCD electrode over the entire detector area. The integrated image is read out by simulating every electrode-to-electrode charge transfer in both the vertical and horizontal CCD registers. A signal level dependency on the capture and emission of signal is included and the current state of each electrode (e.g., barrier or storage) is considered when distributing integrated and emitted signal. Options for performing preflushing, preflashing, and including mini-channels are available on both the vertical and horizontal CCD registers. In addition, dark signal generation and image transfer smear can be selectively enabled or disabled. A comparison of the charge transfer efficiency (CTE) data measured on the Hubble space telescope imaging spectrometer (STIS) CCD with the CTE extracted from model simulations of the STIS CCD show good agreement.

Deflection control system for prestressed concrete bridges by CCD camera. CCD camera ni yoru prestressed concrete kyo no tawami kanri system

Energy Technology Data Exchange (ETDEWEB)

Noda, Y.; Nakayama, Y.; Arai, T. (Kawada Construction Co. Ltd., Tokyo (Japan))

1994-03-15

For the long-span prestressed concrete bridge (continuous box girder and cable stayed bridge), the design and construction control becomes increasingly complicated as construction proceeds because of its cyclic works. This paper describes the method and operation of an automatic levelling module using CCD camera and the experimental results by this system. For this automatic levelling system, the altitude can be automatically measured by measuring the center location of gravity of the target on the bridge surface using CCD camera. The present deflection control system developed compares the measured value by the automatic levelling system with the design value obtained by the design calculation system, and manages them. From the real-time continuous measurement for the long term, in which the CCD camera was set on the bridge surface, it was found that the stable measurement accuracy can be obtained. Successful application of this system demonstrates that the system is an effective and efficient construction aid. 11 refs., 19 figs., 1 tab.

Variationen und ihre Kompensation in CMOS Digitalschaltungen

OpenAIRE

Baumann, Thomas

2010-01-01

Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

Overexpression of PSP1 enhances growth of transgenic Arabidopsis plants under ambient air conditions.

Science.gov (United States)

Han, Xiaofang; Peng, Keli; Wu, Haixia; Song, Shanshan; Zhu, Yerong; Bai, Yanling; Wang, Yong

2017-07-01

The importance of the phosphorylated pathway (PPSB) of L-serine (Ser) biosynthesis in plant growth and development has been demonstrated, but its specific role in leaves and interaction with photorespiration, the main leaf Ser biosynthetic pathway at daytime, are still unclear. To investigate whether changes in biosynthesis of Ser by the PPSB in leaves could have an impact on photorespiration and plant growth, we overexpressed PSP1, the last enzyme of this pathway, under control of the Cauliflower Mosaic Virus 35S promoter in Arabidopsis thaliana. Overexpressor plants grown in normal air displayed larger rosette diameter and leaf area as well as higher fresh and dry weight than the wild type. By contrast, no statistically significant differences to the wild type were observed when the overexpressor seedlings were transferred to elevated CO 2 , indicating a relationship between PSP1 overexpression and photorespiration. Additionally, the transgenic plants displayed higher photorespiration, an increase in CO 2 net-uptake and stronger expression in the light of genes encoding enzymes involved in photorespiration. We further demonstrated that expression of many genes involved in nitrogen assimilation was also promoted in leaves of transgenic plants and that leaf nitrate reductase activity increased in the light, too, although not in the dark. Our results suggest a close correlation between the function of PPSB and photorespiration, and also nitrogen metabolism in leaves.

One method for HJ-1-A HSI and CCD data fusion

International Nuclear Information System (INIS)

Xiong, Wencheng; Shao, Yun; Shen, Wenming; Xiao, Rulin; Fu, Zhuo; Shi, Yuanli

2014-01-01

HJ-1-A satellite, developed by China independently, was equipped with two sensors of Hyper Spectral Imager (HSI) and multispectral sensor (CCD). In this paper, we examine the benefits of combining data from CCD data (high-spatial-resolution, low-spectral-resolution image) with HSI data (low -spatial-resolution, high -spectral-resolution image). Due to the same imaging time and similar spectral regime, the CCD and HSI data can be registered with each other well, and the difference between CCD and HSI data mainly is systematic bias. The approach we have been investigating compares the spectral information present in the multispectral image to the spectral content in the hyperspectral image, and derives a set of equations to approximately acquire the systematic bias between the two sensors. The systematic bias is then applied to the interpolated high-spectral CCD image to produce a fused product. This fused image has the spectral resolution of the hyperspectral image (HSI) and the spatial resolution of the multispectral image (CCD). It is capable of full exploitation as a hyperspectral image. We evaluate this technique using the data of Honghe wetland and show both good spectral and visual fidelity. An analysis of SAM classification test case shows good result when compared to original image. All in all, the approach we developed here provides a means for fusing data from HJ-1-A satellite to produce a spatial-resolution-enhanced hyperspectral data cube that can be further analyzed by spectral classification and detection algorithms

Hyperspectral Image-Based Night-Time Vehicle Light Detection Using Spectral Normalization and Distance Mapper for Intelligent Headlight Control

Directory of Open Access Journals (Sweden)

Heekang Kim

2016-07-01

Full Text Available This paper proposes a vehicle light detection method using a hyperspectral camera instead of a Charge-Coupled Device (CCD or Complementary metal-Oxide-Semiconductor (CMOS camera for adaptive car headlamp control. To apply Intelligent Headlight Control (IHC, the vehicle headlights need to be detected. Headlights are comprised from a variety of lighting sources, such as Light Emitting Diodes (LEDs, High-intensity discharge (HID, and halogen lamps. In addition, rear lamps are made of LED and halogen lamp. This paper refers to the recent research in IHC. Some problems exist in the detection of headlights, such as erroneous detection of street lights or sign lights and the reflection plate of ego-car from CCD or CMOS images. To solve these problems, this study uses hyperspectral images because they have hundreds of bands and provide more information than a CCD or CMOS camera. Recent methods to detect headlights used the Spectral Angle Mapper (SAM, Spectral Correlation Mapper (SCM, and Euclidean Distance Mapper (EDM. The experimental results highlight the feasibility of the proposed method in three types of lights (LED, HID, and halogen.

A model for measurement of noise in CCD digital-video cameras

International Nuclear Information System (INIS)

Irie, K; Woodhead, I M; McKinnon, A E; Unsworth, K

2008-01-01

This study presents a comprehensive measurement of CCD digital-video camera noise. Knowledge of noise detail within images or video streams allows for the development of more sophisticated algorithms for separating true image content from the noise generated in an image sensor. The robustness and performance of an image-processing algorithm is fundamentally limited by sensor noise. The individual noise sources present in CCD sensors are well understood, but there has been little literature on the development of a complete noise model for CCD digital-video cameras, incorporating the effects of quantization and demosaicing

CMOS Integrated Carbon Nanotube Sensor

International Nuclear Information System (INIS)

Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

2009-01-01

Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

CMOS analog circuit design

CERN Document Server

Allen, Phillip E

1987-01-01

This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Rimoldi, Marco; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

The putative thiosulfate sulfurtransferases PspE and GlpE contribute to virulence of Salmonella Typhimurium in the mouse model of systemic disease.

Directory of Open Access Journals (Sweden)

Inke Wallrodt

Full Text Available The phage-shock protein PspE and GlpE of the glycerol 3-phosphate regulon of Salmonella enterica serovar Typhimurium are predicted to belong to the class of thiosulfate sulfurtransferases, enzymes that traffic sulfur between molecules. In the present study we demonstrated that the two genes contribute to S. Typhimurium virulence, as a glpE and pspE double deletion strain showed significantly decreased virulence in a mouse model of systemic infection. However, challenge of cultured epithelial cells and macrophages did not reveal any virulence-associated phenotypes. We hypothesized that their contribution to virulence could be in sulfur metabolism or by contributing to resistance to nitric oxide, oxidative stress, or cyanide detoxification. In vitro studies demonstrated that glpE but not pspE was important for resistance to H2O2. Since the double mutant, which was the one affected in virulence, was not affected in this assay, we concluded that resistance to oxidative stress and the virulence phenotype was most likely not linked. The two genes did not contribute to nitric oxid stress, to synthesis of essential sulfur containing amino acids, nor to detoxification of cyanide. Currently, the precise mechanism by which they contribute to virulence remains elusive.

Long term ionization response of several BiCMOS VLSIC technologies

International Nuclear Information System (INIS)

Pease, R.L.; Combs, W.; Clark, S.

1992-01-01

BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies

First principle leakage current reduction technique for CMOS devices

CSIR Research Space (South Africa)

Tsague, HD

2015-12-01

Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

Noise analysis for CCD-based ultraviolet and visible spectrophotometry.

Science.gov (United States)

Davenport, John J; Hodgkinson, Jane; Saffell, John R; Tatam, Ralph P

2015-09-20

We present the results of a detailed analysis of the noise behavior of two CCD spectrometers in common use, an AvaSpec-3648 CCD UV spectrometer and an Ocean Optics S2000 Vis spectrometer. Light sources used include a deuterium UV/Vis lamp and UV and visible LEDs. Common noise phenomena include source fluctuation noise, photoresponse nonuniformity, dark current noise, fixed pattern noise, and read noise. These were identified and characterized by varying light source, spectrometer settings, or temperature. A number of noise-limiting techniques are proposed, demonstrating a best-case spectroscopic noise equivalent absorbance of 3.5×10(-4)  AU for the AvaSpec-3648 and 5.6×10(-4)  AU for the Ocean Optics S2000 over a 30 s integration period. These techniques can be used on other CCD spectrometers to optimize performance.

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

A Bridge Deflection Monitoring System Based on CCD

Directory of Open Access Journals (Sweden)

Baohua Shan

2016-01-01

Full Text Available For long-term monitoring of the midspan deflection of Songjiazhuang cloverleaf junction on 309 national roads in Zibo city, this paper proposes Zhang’s calibration-based DIC deflection monitoring method. CCD cameras are used to track the change of targets’ position, Zhang’s calibration algorithm is introduced to acquire the intrinsic and extrinsic parameters of CCD cameras, and the DIC method is combined with Zhang’s calibration algorithm to measure bridge deflection. The comparative test between Zhang’s calibration and scale calibration is conducted in lab, and experimental results indicate that the proposed method has higher precision. According to the deflection monitoring scheme, the deflection monitoring software for Songjiazhuang cloverleaf junction is developed by MATLAB, and a 4-channel CCD deflection monitoring system for Songjiazhuang cloverleaf junction is integrated in this paper. This deflection monitoring system includes functions such as image preview, simultaneous collection, camera calibration, deflection display, and data storage. In situ deflection curves show a consistent trend; this suggests that the proposed method is reliable and is suitable for the long-term monitoring of bridge deflection.

CMOS front ends for millimeter wave wireless communication systems

CERN Document Server

Deferm, Noël

2015-01-01

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

Merits of CMOS/SIMOX technology for low-voltage SRAM macros

CERN Document Server

Kumagai, K; Yamada, T; Nakamura, H; Onishi, H; Matsubara, Y; Imai, K; Kurosawa, S

1999-01-01

A 128-kbit SRAM (static random access memory) macro with the 0.35 mu m FD (fully-depleted) CMOS/SIMOX (separation by implantation of oxygen) technology has been developed to demonstrate the merits of that technology for low-voltage $9 applications. Its access time at Vdd =1.5 V was comparable with that obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3 V, due to the combination of the small S/D capacitance and the small back-bias effect. As the $9 yield of the 128-kbit SRAM macros was almost the same as the standard bulk CMOS technology, the manufacturability of the 0.35 mu m FD-CMOS/SIMOX technology has also been demonstrated. (7 refs).

Hybrid Josephson-CMOS Memory in Advanced Technologies and Larger Sizes

International Nuclear Information System (INIS)

Liu, Q; Van Duzer, T; Fujiwara, K; Yoshikawa, N

2006-01-01

Recent progress on demonstrating components of the 64 kb Josephson-CMOS hybrid memory has encouraged exploration of the advancement possible with use of advanced technologies for both the Josephson and CMOS parts of the memory, as well as considerations of the effect of memory size on access time and power dissipation. The simulations to be reported depend on the use of an approximate model for 90 nm CMOS at 4 K. This model is an extension of the one we developed for 0.25 μm CMOS and have already verified. For the Josephson parts, we have chosen 20 kA/cm 2 technology, which was recently demonstrated. The calculations show that power dissipation and access time increase rather slowly with increasing size of the memory

A large area cooled-CCD detector for electron microscopy

International Nuclear Information System (INIS)

Faruqi, A.R.; Andrews, H.N.; Raeburn, C.

1994-01-01

Large area cooled-CCDs are an excellent medium for (indirectly) recording electron images and electron diffraction patterns in real time and for use in electron tomography; real-time imaging is extremely useful in making rapid adjustments in the electron microscope. CCDs provide high sensitivity (useful for minimising dosage to radiation-sensitive biological specimen), good resolution, stable performance, excellent dynamic range and linearity and a reasonably fast readout.We have built an electron imaging device based on the EEV 1152 by 814 pixel CCD which is controlled from a unix based SUN Sparcstation operating under X-Windows. The incident 100 kV electrons are converted to visible light in a 0.5 mm thick YAG single crystal which is imaged through a lens on to the CCD.The CCD electronics is designed to be as flexible as possible and allows a wide variation in the readout speed to cater for the relatively fast application where readout noise is less critical and low readout noise applications where the extra few seconds of readout time are not significant. The CCD electronics is built in VME format which is controlled through a S-bus to VME driver. With two parallel channels of readout the whole image can be read out in similar 1 s (using the faster readout speed) with 16 bit precision and the image is displayed under X-Windows in a few seconds. The present readout works at 500 kHz and has a noise of similar 30 e rms per pixel. With a Peltier cooling device we can operate the CCD at similar -40 circle C which reduces the dark current adequately to allow exposures of up to several minutes. Several examples of patterns collected with the system on a Philips CM12 microscope will be presented. ((orig.))

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

NARCIS (Netherlands)

Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

2018-01-01

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

DEFF Research Database (Denmark)

Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

2008-01-01

This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

Science.gov (United States)

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

2017-09-01

We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e- rms /pixel . This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

Development of CCD Imaging System Using Thermoelectric Cooling Method

Directory of Open Access Journals (Sweden)

Youngsik Park

2000-06-01

Full Text Available We developed low light CCD imaging system using thermoelectric cooling method collaboration with a company to design a commercial model. It consists of Kodak KAF-0401E (768x512 pixels CCD chip,thermoelectric module manufactured by Thermotek. This TEC system can reach an operative temperature of -25deg. We employed an Uniblitz VS25S shutter and it has capability a minimum exposure time 80ms. The system components are an interface card using a Korea Astronomy Observatory (hereafter KAO ISA bus controller, image acquisition with AD9816 chip, that is 12bit video processor. The performance test with this imaging system showed good operation within the initial specification of our design. It shows a dark current less than 0.4e-/pixel/sec at a temperature of -10deg, a linearity 99.9+/-0.1%, gain 4.24e-adu, and system noise is 25.3e- (rms. For low temperature CCD operation, we designed a TEC, which uses a one-stage peltier module and forced air heat exchanger. This TEC imaging system enables accurate photometry (+/-0.01mag even though the CCD is not at 'conventional' cryogenic temperatures (140K. The system can be a useful instrument for any other imaging applications. Finally, with this system, we obtained several images of astronomical objects for system performance tests.

Research of optical coherence tomography microscope based on CCD detector

Science.gov (United States)

Zhang, Hua; Xu, Zhongbao; Zhang, Shuomo

2008-12-01

The reference wave phase was modulated with a sinusoidal vibrating mirror attached to a Piezoelectric Transducer (PZT), the integration was performed by a CCD, and the charge storage period of the CCD image sensor was one-quarter period of the sinusoidal phase modulation. With the frequency- synchronous detection technique, four images (four frames of interference pattern) were recorded during one period of the phase modulation. In order to obtain the optimum modulation parameter, the values of amplitude and phase of the sinusoidal phase modulation were determined by considering the measurement error caused by the additive noise contained in the detected values. The PZT oscillation was controlled by a closed loop control system based on PID controller. An ideal discrete digital sine function at 50Hz with adjustable amplitude was used to adjust the vibrating of PZT, and a digital phase shift techniques was used to adjust vibrating phase of PZT so that the phase of the modulation could reach their optimum values. The CCD detector was triggered with software at 200Hz. Based on work above a small coherent signal masked by the preponderant incoherent background with a CCD detector was obtained.

CMOS Image Sensors: Electronic Camera On A Chip

Science.gov (United States)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

CMOS image sensor-based immunodetection by refractive-index change.

Science.gov (United States)

Devadhasan, Jasmine P; Kim, Sanghyo

2012-01-01

A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.

CMOS circuit design, layout and simulation

CERN Document Server

Baker, R Jacob

2010-01-01

The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

Theoretical and experimental study of single particle tracking in extreme conditions: single photon imaging

International Nuclear Information System (INIS)

Cajgfinger, T.

2012-10-01

This manuscript presents my thesis on the high frame rate (500 frames / second) single-photon detector electron-bombarded CMOS (ebCMOS). The first section compares three ultra-sensitive detectors and their methods for improving photon sensitivity: the CMOS low noise (sCMOS), the electron-multiplying CCD (emCCD) with signal multiplication by pixel and the ebCMOS with amplification by applied electric field. The method developed to detect single photon impacts with intra-pixel resolution on the ebCMOS sensor is presented. The second section compares the localization accuracy of these detectors in extreme conditions of very low photon flux (<10 photons/frame). First the theoretical limit is calculated using the Cramer-Rao lower bound for significant parameter sets. An experimental comparison of the detectors is then described. The setup provides one or more point sources controlled in position, signal and background noise. The results allow a comparison of the experimental effectiveness, purity and localization accuracy. The last section describes two experiments with the ebCMOS camera. The first aims at tracking hundreds of quantum dots simultaneously at the Nanoptec center. The second focuses on the swimming of bacteria at the surface at the Joliot Curie Institute. The point sources tracking algorithm using single photons and the Kalman filter implementation developed for these experiments is also described. (author)

Investigation of radiation damage effects in neutron irradiated CCD

International Nuclear Information System (INIS)

Brau, James E.; Igonkina, Olga; Potter, Chris T.; Sinev, Nikolai B.

2005-01-01

A Charge Coupled Devices (CCD)-based vertex detector is a leading option for vertex detection at the future linear collider. A major issue for this application is the radiation hardness of such devices. Tests of radiation hardness of CCDs used in the SLD vertex detector, VXD3, have been reported earlier. The first measurements of 1998 involved a spare VXD3 CCD that was irradiated with neutrons from a radioactive source (Pu-Be), and from a nuclear reactor. In 2003, we had the opportunity to disassemble the VXD3 detector and study the nature of the radiation damage it incurred during 3 years of operation at SLC. In the preparation for this study, additional experiments with the spare VXD3 CCD were performed. These included measurements of trapping times in neutron irradiated CCDs. Results, reported here, will help us better understand the mechanism of radiation damage effects and develop techniques to minimize performance degradation due to radiation damage

Contact CMOS imaging of gaseous oxygen sensor array.

Science.gov (United States)

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

Single-chip RF communications systems in CMOS

DEFF Research Database (Denmark)

Olesen, Ole

1997-01-01

The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

CMOS sigma-delta converters practical design guide

CERN Document Server

De la Rosa, Jose M

2013-01-01

A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

High-Voltage-Input Level Translator Using Standard CMOS

Science.gov (United States)

Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

2011-01-01

proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

Serum levels of pancreatic stone protein (PSP/reg1A as an indicator of beta-cell apoptosis suggest an increased apoptosis rate in hepatocyte nuclear factor 1 alpha (HNF1A-MODY carriers from the third decade of life onward

Directory of Open Access Journals (Sweden)

Bacon Siobhan

2012-07-01

Full Text Available Abstract Background Mutations in the transcription factor hepatocyte nuclear factor-1-alpha (HNF1A result in the commonest type of maturity onset diabetes of the young (MODY. HNF1A-MODY carriers have reduced pancreatic beta cell mass, partially due to an increased rate of apoptosis. To date, it has not been possible to determine when apoptosis is occurring in HNF1A-MODY.We have recently demonstrated that beta cell apoptosis stimulates the expression of the pancreatic stone protein/regenerating (PSP/reg gene in surviving neighbour cells, and that PSP/reg1A protein is subsequently secreted from these cells. The objective of this study was to determine whether serum levels of PSP/reg1A are elevated during disease progression in HNF1A-MODY carriers, and whether it may provide information regarding the onset of beta-cell apoptosis. Methods We analysed serum PSP/reg1A levels and correlated with clinical and biochemical parameters in subjects with HNF1A-MODY, glucokinase (GCK-MODY, and type 1 diabetes mellitus. A control group of normoglycaemic subjects was also analysed. Results PSP/reg1A serum levels were significantly elevated in HNF1A-MODY (n = 37 subjects compared to controls (n = 60 (median = 12.50 ng/ml, IQR = 10.61-17.87 ng/ml versus median = 10.72 ng/ml, IQR = 8.94-12.54 ng/ml, p = 0.0008. PSP/reg1A correlated negatively with insulin levels during OGTT, (rho = −0.40, p = 0.02. Interestingly we noted a significant positive correlation of PSP/reg1A with age of the HNF1A-MODY carriers (rho = 0.40 p = 0.02 with an age of 25 years separating carriers with low and high PSP/reg1A levels. Patients with type 1 diabetes mellitus also had elevated serum levels of PSP/reg1A compared to controls, however this was independent of the duration of diabetes. Conclusion Our data suggest that beta cell apoptosis contributes increasingly to the pathophysiology of HNF1A-MODY in patients 25 years and over

Serum levels of pancreatic stone protein (PSP)/reg1A as an indicator of beta-cell apoptosis suggest an increased apoptosis rate in hepatocyte nuclear factor 1 alpha (HNF1A-MODY) carriers from the third decade of life onward

LENUS (Irish Health Repository)

Bacon, Siobhan

2012-07-18

AbstractBackgroundMutations in the transcription factor hepatocyte nuclear factor-1-alpha (HNF1A) result in the commonest type of maturity onset diabetes of the young (MODY). HNF1A-MODY carriers have reduced pancreatic beta cell mass, partially due to an increased rate of apoptosis. To date, it has not been possible to determine when apoptosis is occurring in HNF1A-MODY.We have recently demonstrated that beta cell apoptosis stimulates the expression of the pancreatic stone protein\\/regenerating (PSP\\/reg) gene in surviving neighbour cells, and that PSP\\/reg1A protein is subsequently secreted from these cells. The objective of this study was to determine whether serum levels of PSP\\/reg1A are elevated during disease progression in HNF1A-MODY carriers, and whether it may provide information regarding the onset of beta-cell apoptosis.MethodsWe analysed serum PSP\\/reg1A levels and correlated with clinical and biochemical parameters in subjects with HNF1A-MODY, glucokinase (GCK-MODY), and type 1 diabetes mellitus. A control group of normoglycaemic subjects was also analysed.ResultsPSP\\/reg1A serum levels were significantly elevated in HNF1A-MODY (n = 37) subjects compared to controls (n = 60) (median = 12.50 ng\\/ml, IQR = 10.61-17.87 ng\\/ml versus median = 10.72 ng\\/ml, IQR = 8.94-12.54 ng\\/ml, p = 0.0008). PSP\\/reg1A correlated negatively with insulin levels during OGTT, (rho = −0.40, p = 0.02). Interestingly we noted a significant positive correlation of PSP\\/reg1A with age of the HNF1A-MODY carriers (rho = 0.40 p = 0.02) with an age of 25 years separating carriers with low and high PSP\\/reg1A levels. Patients with type 1 diabetes mellitus also had elevated serum levels of PSP\\/reg1A compared to controls, however this was independent of the duration of diabetes.ConclusionOur data suggest that beta cell apoptosis contributes increasingly to the pathophysiology of HNF1A-MODY in patients 25 years and

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

Science.gov (United States)

Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

2016-02-22

The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

Advancement of CMOS Doping Technology in an External Development Framework

Science.gov (United States)

Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

2011-01-01

The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Science.gov (United States)

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Transient-induced latchup in CMOS integrated circuits

CERN Document Server

Ker, Ming-Dou

2009-01-01

"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description.

Stroboscope Based Synchronization of Full Frame CCD Sensors.

Science.gov (United States)

Shen, Liang; Feng, Xiaobing; Zhang, Yuan; Shi, Min; Zhu, Dengming; Wang, Zhaoqi

2017-04-07

The key obstacle to the use of consumer cameras in computer vision and computer graphics applications is the lack of synchronization hardware. We present a stroboscope based synchronization approach for the charge-coupled device (CCD) consumer cameras. The synchronization is realized by first aligning the frames from different video sequences based on the smear dots of the stroboscope, and then matching the sequences using a hidden Markov model. Compared with current synchronized capture equipment, the proposed approach greatly reduces the cost by using inexpensive CCD cameras and one stroboscope. The results show that our method could reach a high accuracy much better than the frame-level synchronization of traditional software methods.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

Science.gov (United States)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Development of a CMOS process using high energy ion implantation

International Nuclear Information System (INIS)

Stolmeijer, A.

1986-01-01

The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

The study of interferometer spectrometer based on DSP and linear CCD

Science.gov (United States)

Kang, Hua; Peng, Yuexiang; Xu, Xinchen; Xing, Xiaoqiao

2010-11-01

In this paper, general theory of Fourier-transform spectrometer and polarization interferometer is presented. A new design is proposed for Fourier-transform spectrometer based on polarization interferometer with Wollaston prisms and linear CCD. Firstly, measured light is changed into linear polarization light by polarization plate. And then the light can be split into ordinary and extraordinary lights by going through one Wollaston prism. At last, after going through another Wollaston prism and analyzer, interfering fringes can be formed on linear CCD behind the analyzer. The linear CCD is driven by CPLD to output amplitude of interfering fringes and synchronous signals of frames and pixels respectively. DSP is used to collect interference pattern signals from CCD and the digital data of interfering fringes are processed by using 2048-point-FFT. Finally, optical spectrum of measured light can be display on LCD connected to DSP with RS232. The spectrometer will possess the features of firmness, portability and the ability of real-time analyzing. The work will provide a convenient and significant foundation for application of more high accuracy of Fourier-transform spectrometer.

CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

National Research Council Canada - National Science Library

An, S

2001-01-01

.... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

CCD-based thermoreflectance microscopy: principles and applications

International Nuclear Information System (INIS)

Farzaneh, M; Maize, K; Shakouri, A; Lueerssen, D; Summers, J A; Hudgings, Janice A; Mayer, P M; Ram, R J; Raad, P E; Pipe, K P

2009-01-01

CCD-based thermoreflectance microscopy has emerged as a high resolution, non-contact imaging technique for thermal profiling and performance and reliability analysis of numerous electronic and optoelectronic devices at the micro-scale. This thermography technique, which is based on measuring the relative change in reflectivity of the device surface as a function of change in temperature, provides high-resolution thermal images that are useful for hot spot detection and failure analysis, mapping of temperature distribution, measurement of thermal transient, optical characterization of photonic devices and measurement of thermal conductivity in thin films. In this paper we review the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermoreflectance microscopy in various devices. (topical review)

Converting structures to optimize the Synchrotron X radiation detection by CCD systems

International Nuclear Information System (INIS)

Zanella, G.; Zannoni, R.

1987-01-01

It is pointed out how the quantum efficiency of X ray detection for CCD detecting system can be improved enlarging their sensivity range by means of heavy element converting structures. So the problem of fabricating CCD with a deep emptying layer is avoided

A CMOS transconductance-C filter technique for very high frequencies

NARCIS (Netherlands)

Nauta, Bram

1992-01-01

CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators, are presented. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters

Nano-electromechanical switch-CMOS hybrid technology and its applications.

Science.gov (United States)

Lee, B H; Hwang, H J; Cho, C H; Lim, S K; Lee, S Y; Hwang, H

2011-01-01

Si-based CMOS technology is facing a serious challenge in terms of power consumption and variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Si-based CMOS devices has shown a theoretical feasibility for power management, but a huge technical gap must be bridged before a nanoscale NEM switch can be realized due to insufficient material development and the limited understanding of its reliability characteristics. These authors propose the use of a multilayer graphene as a nanoscale cantilever material for a nanoscale NEM switchwith dimensions comparable to those of the state-of-the-art Si-based CMOS devices. The optimal thickness for the multilayer graphene (about five layers) is suggested based on an analytical model. Multilayer graphene can provide the highest Young's modulus among the known electrode materials and a yielding strength that allows more than 15% bending. Further research on material screening and device integration is needed, however, to realize the promises of the hybridization of NEM-switch and Si-based CMOS devices.

CMOS VLSI Active-Pixel Sensor for Tracking

Science.gov (United States)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

Development of radiation hard CMOS active pixel sensors for HL-LHC

International Nuclear Information System (INIS)

Pernegger, Heinz

2016-01-01

New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

Design of area array CCD image acquisition and display system based on FPGA

Science.gov (United States)

Li, Lei; Zhang, Ning; Li, Tianting; Pan, Yue; Dai, Yuming

2014-09-01

With the development of science and technology, CCD(Charge-coupled Device) has been widely applied in various fields and plays an important role in the modern sensing system, therefore researching a real-time image acquisition and display plan based on CCD device has great significance. This paper introduces an image data acquisition and display system of area array CCD based on FPGA. Several key technical challenges and problems of the system have also been analyzed and followed solutions put forward .The FPGA works as the core processing unit in the system that controls the integral time sequence .The ICX285AL area array CCD image sensor produced by SONY Corporation has been used in the system. The FPGA works to complete the driver of the area array CCD, then analog front end (AFE) processes the signal of the CCD image, including amplification, filtering, noise elimination, CDS correlation double sampling, etc. AD9945 produced by ADI Corporation to convert analog signal to digital signal. Developed Camera Link high-speed data transmission circuit, and completed the PC-end software design of the image acquisition, and realized the real-time display of images. The result through practical testing indicates that the system in the image acquisition and control is stable and reliable, and the indicators meet the actual project requirements.

A Design and Development of Multi-Purpose CCD Camera System with Thermoelectric Cooling: Software

Directory of Open Access Journals (Sweden)

S. H. Oh

2007-12-01

Full Text Available We present a software which we developed for the multi-purpose CCD camera. This software can be used on the all 3 types of CCD - KAF-0401E (768×512, KAF-1602E (15367times;1024, KAF-3200E (2184×1472 made in KODAK Co.. For the efficient CCD camera control, the software is operated with two independent processes of the CCD control program and the temperature/shutter operation program. This software is designed to fully automatic operation as well as manually operation under LINUX system, and is controled by LINUX user signal procedure. We plan to use this software for all sky survey system and also night sky monitoring and sky observation. As our results, the read-out time of each CCD are about 15sec, 64sec, 134sec for KAF-0401E, KAF-1602E, KAF-3200E., because these time are limited by the data transmission speed of parallel port. For larger format CCD, the data transmission is required more high speed. we are considering this control software to one using USB port for high speed data transmission.

Pre-Clinical Tests of an Integrated CMOS Biomolecular Sensor for Cardiac Diseases Diagnosis.

Science.gov (United States)

Lee, Jen-Kuang; Wang, I-Shun; Huang, Chi-Hsien; Chen, Yih-Fan; Huang, Nien-Tsu; Lin, Chih-Ting

2017-11-26

Coronary artery disease and its related complications pose great threats to human health. In this work, we aim to clinically evaluate a CMOS field-effect biomolecular sensor for cardiac biomarkers, cardiac-specific troponin-I (cTnI), N -terminal prohormone brain natriuretic peptide (NT-proBNP), and interleukin-6 (IL-6). The CMOS biosensor is implemented via a standard commercialized 0.35 μm CMOS process. To validate the sensing characteristics, in buffer conditions, the developed CMOS biosensor has identified the detection limits of IL-6, cTnI, and NT-proBNP as being 45 pM, 32 pM, and 32 pM, respectively. In clinical serum conditions, furthermore, the developed CMOS biosensor performs a good correlation with an enzyme-linked immuno-sorbent assay (ELISA) obtained from a hospital central laboratory. Based on this work, the CMOS field-effect biosensor poses good potential for accomplishing the needs of a point-of-care testing (POCT) system for heart disease diagnosis.

A novel multi-actuation CMOS RF MEMS switch

Science.gov (United States)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

Design of offline measuring system for radiation damage effects on linear CCD

International Nuclear Information System (INIS)

Zhang Yong; Tang Benqi; Xiao Zhigang; Wang Zujun; Huang Fang; Huang Shaoyan

2004-01-01

The paper discusses the hardware design of offline measuring system for radiation damage effects on linear CCD. Some credible results were achieved by using this system. The test results indicate that the system is available for the study of the radiation damage effects on linear CCD. (authors)

Integrated 60GHz RF beamforming in CMOS

CERN Document Server

Yu, Yikun; van Roermund, Arthur H M

2011-01-01

""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

Challenges & Roadmap for Beyond CMOS Computing Simulation.

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

VLSI scaling methods and low power CMOS buffer circuit

International Nuclear Information System (INIS)

Sharma Vijay Kumar; Pattanaik Manisha

2013-01-01

Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

Optimization of polarimetry sensitivity for X-ray CCD

CERN Document Server

Hayashida, K; Tsunemi, H; Hashimoto, Y; Ohtani, M

1999-01-01

X-ray polarimetry with CCD has been performed using a polarized X-ray beam from an electron impact X-ray source. The standard data reduction method employing double-pixel events yields the modulation factor M of 0.14 at 27 keV and 0.24 at 43 keV for the 12 mu m pixel size CCD chip. We develop a new data reduction method, in which multi-pixel events are employed, and which approximates the charge spread as an oval shape. We optimize the reduction parameters, so that we improve the P sub m sub i sub n (minimum detectable polarization degree) by factor of three from the value obtained through the usual double-pixel event method.

Stroboscope Based Synchronization of Full Frame CCD Sensors

Directory of Open Access Journals (Sweden)

Liang Shen

2017-04-01

Full Text Available The key obstacle to the use of consumer cameras in computer vision and computer graphics applications is the lack of synchronization hardware. We present a stroboscope based synchronization approach for the charge-coupled device (CCD consumer cameras. The synchronization is realized by first aligning the frames from different video sequences based on the smear dots of the stroboscope, and then matching the sequences using a hidden Markov model. Compared with current synchronized capture equipment, the proposed approach greatly reduces the cost by using inexpensive CCD cameras and one stroboscope. The results show that our method could reach a high accuracy much better than the frame-level synchronization of traditional software methods.

Characterization of active CMOS pixel sensors on high resistive substrate

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

2016-07-01

Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Modelling charge storage in Euclid CCD structures

International Nuclear Information System (INIS)

Clarke, A S; Holland, A; Hall, D J; Burt, D

2012-01-01

The primary aim of ESA's proposed Euclid mission is to observe the distribution of galaxies and galaxy clusters, enabling the mapping of the dark architecture of the universe [1]. This requires a high performance detector, designed to endure a harsh radiation environment. The e2v CCD204 image sensor was redesigned for use on the Euclid mission [2]. The resulting e2v CCD273 has a narrower serial register electrode and transfer channel compared to its predecessor, causing a reduction in the size of charge packets stored, thus reducing the number of traps encountered by the signal electrons during charge transfer and improving the serial Charge Transfer Efficiency (CTE) under irradiation [3]. The proposed Euclid CCD has been modelled using the Silvaco TCAD software [4], to test preliminary calculations for the Full Well Capacity (FWC) and the channel potential of the device and provide indications of the volume occupied by varying signals. These results are essential for the realisation of the mission objectives and for radiation damage studies, with the aim of producing empirically derived formulae to approximate signal-volume characteristics in the devices. These formulae will be used in the radiation damage (charge trapping) models. The Silvaco simulations have been tested against real devices to compare the experimental measurements to those predicted in the models. Using these results, the implications of this study on the Euclid mission can be investigated in more detail.

Sadhana | Indian Academy of Sciences

Indian Academy of Sciences (India)

... a simple delta wing in low supersonic flow (M = 1·8). The PSP system utilized for both the cases involve Optrod- B 1 paint, a specially designed UV lamp for excitation and two scientific grade CCD cameras for imaging. Typical results are shown using both the algebraic transformation approach and resection methodology.

Stellar CCD Photometry: New Approach, Principles and Application

Science.gov (United States)

El-Bassuny Alawy, A.

A new approach is proposed and developed to handle pre-processed CCD frames in order to identify stellar images and derive their relevant parameters. It relies on: 1) Identifying stellar images and assigning approximate positions of their centres using an artificial intelligence technique, (Knowledge Based System), 2) Accurate determination of the centre co-ordinates applying an elementary statistical concept and 3) Estimating the image peak intensity as a stellar magnitude measure employing simple numerical analysis approach. The method has been coded for personal computer users. A CCD frame of the star cluster M67 was adopted as a test case. The results obtained are discussed in comparison with the DAOPHOTII ones and the corresponding published data. Exact coincidence has been found between both results except in very few cases. These exceptions have been discussed in the light of the basis of both methods and the cluster plates. It has been realised that the method suggested represents a very simple, extremely fast, high precision method of stellar CCD photometry. Moreover, it is more capable than DAOPHOTII of handling blended and distorted stellar images. These characteristics show the usefulness of the present method in some astronomical applications, such as auto-focusing and auto-guiding, beside the main purpose, viz. stellar photometry.

Optical CT scanning of PRESAGETM polyurethane samples with a CCD-based readout system

International Nuclear Information System (INIS)

Doran, S J; Krstajic, N; Adamovics, J; Jenneson, P M

2004-01-01

This article demonstrates the resolution capabilities of the CCD scanner under ideal circumstances and describes the first CCD-based optical CT experiments on a new class of dosimeter, known as PRESAGE TM (Heuris Pharma, Skillman, NJ)

Design of CMOS RFIC ultra-wideband impulse transmitters and receivers

CERN Document Server

Nguyen, Cam

2017-01-01

This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets.  The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of U...

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Risti{c}, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

CERN Document Server

Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

2003-01-01

Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Gaudiello, Andrea; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

PSP toxin levels and plankton community composition and abundance in size-fractionated vertical profiles during spring/summer blooms of the toxic dinoflagellate Alexandrium fundyense in the Gulf of Maine and on Georges Bank, 2007, 2008, and 2010: 2. Plankton community composition and abundance.

Science.gov (United States)

Petitpas, Christian M; Turner, Jefferson T; Deeds, Jonathan R; Keafer, Bruce A; McGillicuddy, Dennis J; Milligan, Peter J; Shue, Vangie; White, Kevin D; Anderson, Donald M

2014-05-01

As part of the Gulf of Maine Toxicity (GOMTOX) project, we determined Alexandrium fundyense abundance, paralytic shellfish poisoning (PSP) toxin levels in various plankton size fractions, and the community composition of potential grazers of A. fundyense in plankton size fractions during blooms of this toxic dinoflagellate in the coastal Gulf of Maine and on Georges Bank in spring and summer of 2007, 2008, and 2010. PSP toxins and A. fundyense cells were found throughout the sampled water column (down to 50 m) in the 20-64 μm size fractions. While PSP toxins were widespread throughout all size classes of the zooplankton grazing community, the majority of the toxin was measured in the 20-64 μm size fraction. A. fundyense cellular toxin content estimated from field samples was significantly higher in the coastal Gulf of Maine than on Georges Bank. Most samples containing PSP toxins in the present study had diverse assemblages of grazers. However, some samples clearly suggested PSP toxin accumulation in several different grazer taxa including tintinnids, heterotrophic dinoflagellates of the genus Protoperidinium , barnacle nauplii, the harpacticoid copepod Microsetella norvegica , the calanoid copepods Calanus finmarchicus and Pseudocalanus spp., the marine cladoceran Evadne nordmanni , and hydroids of the genus Clytia . Thus, a diverse assemblage of zooplankton grazers accumulated PSP toxins through food-web interactions. This raises the question of whether PSP toxins pose a potential human health risk not only from nearshore bivalve shellfish, but also potentially from fish and other upper-level consumers in zooplankton-based pelagic food webs.

VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

Science.gov (United States)

Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

2014-10-01

This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

Recent developments with CMOS SSPM photodetectors

Energy Technology Data Exchange (ETDEWEB)

Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

2009-10-21

Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

Directory of Open Access Journals (Sweden)

Farès TOUNSI

2009-09-01

Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

Science.gov (United States)

Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

2010-12-15

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

CMOS-based avalanche photodiodes for direct particle detection

International Nuclear Information System (INIS)

Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

2007-01-01

Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

The total dose effects on the 1/f noise of deep submicron CMOS transistors

International Nuclear Information System (INIS)

Hu Rongbin; Wang Yuxin; Lu Wu

2014-01-01

Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

PERFORMANCE OF DIFFERENT CMOS LOGIC STYLES FOR LOW POWER AND HIGH SPEED

OpenAIRE

Sreenivasa Rao.Ijjada; Ayyanna.G; G.Sekhar Reddy; Dr.V.Malleswara Rao

2011-01-01

Designing high-speed low-power circuits with CMOS technology has been a major research problem for many years. Several logic families have been proposed and used to improve circuit performance beyond that of conventional static CMOS family. Fast circuit families are becoming attractive in deep sub micron technologies since the performance benefits obtained from process scaling are decreasing as feature size decreases. This paper presents CMOS differential circuit families such as Dual rail do...

Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

KAUST Repository

Ghoneim, Mohamed T.; Alfaraj, Nasir; Torres-Sevilla, Galo A.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2016-01-01

. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied

Image quality assessment and medical physics evaluation of different portable dental X-ray units.

Science.gov (United States)

Pittayapat, Pisha; Oliveira-Santos, Christiano; Thevissen, Patrick; Michielsen, Koen; Bergans, Niki; Willems, Guy; Debruyckere, Deborah; Jacobs, Reinhilde

2010-09-10

Recently developed portable dental X-ray units increase the mobility of the forensic odontologists and allow more efficient X-ray work in a disaster field, especially when used in combination with digital sensors. This type of machines might also have potential for application in remote areas, military and humanitarian missions, dental care of patients with mobility limitation, as well as imaging in operating rooms. To evaluate radiographic image quality acquired by three portable X-ray devices in combination with four image receptors and to evaluate their medical physics parameters. Images of five samples consisting of four teeth and one formalin-fixed mandible were acquired by one conventional wall-mounted X-ray unit, MinRay 60/70 kVp, used as a clinical standard, and three portable dental X-ray devices: AnyRay 60 kVp, Nomad 60 kVp and Rextar 70 kVp, in combination with a phosphor image plate (PSP), a CCD, or a CMOS sensor. Three observers evaluated images for standard image quality besides forensic diagnostic quality on a 4-point rating scale. Furthermore, all machines underwent tests for occupational as well as patient dosimetry. Statistical analysis showed good quality imaging for all system, with the combination of Nomad and PSP yielding the best score. A significant difference in image quality between the combination of the four X-ray devices and four sensors was established (p1m: Rextar <0.2 microGy, MinRay <0.1 microGy). The present study demonstrated the feasibility of three portable X-ray systems to be used for specific indications, based on acceptable image quality and sufficient accuracy of the machines and following the standard guidelines for radiation hygiene. Copyright 2010 Elsevier Ireland Ltd. All rights reserved.

Application of CMOS Technology to Silicon Photomultiplier Sensors

Science.gov (United States)

D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

2017-01-01

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

Ultrahigh-speed, high-sensitivity color camera with 300,000-pixel single CCD

Science.gov (United States)

Kitamura, K.; Arai, T.; Yonai, J.; Hayashida, T.; Ohtake, H.; Kurita, T.; Tanioka, K.; Maruyama, H.; Namiki, J.; Yanagi, T.; Yoshida, T.; van Kuijk, H.; Bosiers, Jan T.; Etoh, T. G.

2007-01-01

We have developed an ultrahigh-speed, high-sensitivity portable color camera with a new 300,000-pixel single CCD. The 300,000-pixel CCD, which has four times the number of pixels of our initial model, was developed by seamlessly joining two 150,000-pixel CCDs. A green-red-green-blue (GRGB) Bayer filter is used to realize a color camera with the single-chip CCD. The camera is capable of ultrahigh-speed video recording at up to 1,000,000 frames/sec, and small enough to be handheld. We also developed a technology for dividing the CCD output signal to enable parallel, highspeed readout and recording in external memory; this makes possible long, continuous shots up to 1,000 frames/second. As a result of an experiment, video footage was imaged at an athletics meet. Because of high-speed shooting, even detailed movements of athletes' muscles were captured. This camera can capture clear slow-motion videos, so it enables previously impossible live footage to be imaged for various TV broadcasting programs.

The putative thiosulfate sulfurtransferases PspE and GlpE contribute to virulence of Salmonella Typhimurium in the mouse model of systemic disease

DEFF Research Database (Denmark)

Wallrodt, Inke; Jelsbak, Lotte; Thorndahl, Lotte

2013-01-01

contribute to S. Typhimurium virulence, as a glpE and pspE double deletion strain showed significantly decreased virulence in a mouse model of systemic infection. However, challenge of cultured epithelial cells and macrophages did not reveal any virulence-associated phenotypes. We hypothesized...

A tilted fiber-optic plate coupled CCD detector for high resolution neutron imaging

Energy Technology Data Exchange (ETDEWEB)

Kim, Jongyul; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Kim, Jongyul; Hwy, Limchang; Kim, Taejoo; Lee, Kyehong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Seungwook [Pusan National Univ., Pusan (Korea, Republic of)

2013-05-15

One of these efforts is that a tilted scintillator geometry and lens coupled CCD detector for neutron imaging system were used to improve spatial resolution in one dimension. The increased spatial resolution in one dimension was applied to fuel cell study. However, a lens coupled CCD detector has lower sensitivity than a fiber-optic plate coupled CCD detector due to light loss. In this research, a tilted detector using fiber-optic plate coupled CCD detector was developed to improve resolution and sensitivity. In addition, a tilted detector can prevent an image sensor from direct radiation damage. Neutron imaging has been used for fuel cell study, lithium ion battery study, and many scientific applications. High quality neutron imaging is demanded for more detailed studies of applications, and spatial resolution should be considered to get high quality neutron imaging. Therefore, there were many efforts to improve spatial resolution.

Epoxy Chip-in-Carrier Integration and Screen-Printed Metalization for Multichannel Microfluidic Lab-on-CMOS Microsystems.

Science.gov (United States)

Li, Lin; Yin, Heyu; Mason, Andrew J

2018-04-01

The integration of biosensors, microfluidics, and CMOS instrumentation provides a compact lab-on-CMOS microsystem well suited for high throughput measurement. This paper describes a new epoxy chip-in-carrier integration process and two planar metalization techniques for lab-on-CMOS that enable on-CMOS electrochemical measurement with multichannel microfluidics. Several design approaches with different fabrication steps and materials were experimentally analyzed to identify an ideal process that can achieve desired capability with high yield and low material and tool cost. On-chip electrochemical measurements of the integrated assembly were performed to verify the functionality of the chip-in-carrier packaging and its capability for microfluidic integration. The newly developed CMOS-compatible epoxy chip-in-carrier process paves the way for full implementation of many lab-on-CMOS applications with CMOS ICs as core electronic instruments.

CMOS SPDT switch for WLAN applications

International Nuclear Information System (INIS)

Bhuiyan, M A S; Reaz, M B I; Rahman, L F; Minhad, K N

2015-01-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal. (paper)

Cmos spdt switch for wlan applications

Science.gov (United States)

Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

2015-04-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

Calibration of the CCD photonic measuring system for railway inspection

Science.gov (United States)

Popov, D. V.; Ryabichenko, R. B.; Krivosheina, E. A.

2005-08-01

Increasing of traffic speed is the most important task in Moscow Metro. Requirements for traffic safety grow up simultaneously with the speed increasing. Currently for track inspection in Moscow Metro is used track measurement car has built in 1954. The main drawbacks of this system are absence of automated data processing and low accuracy. Non-contact photonic measurement system (KSIR) is developed for solving this problem. New track inspection car will be built in several months. This car will use two different track inspection systems and car locating subsystem based on track circuit counting. The KSIR consists of four subsystems: rail wear, height and track gauge measurement (BFSM); rail slump measurement (FIP); contact rail measurement (FKR); speed, level and car locating (USI). Currently new subsystem for wheel flange wear (IRK) is developed. The KSIR carry out measurements in real-time mode. The BFSM subsystem contains 4 matrix CCD cameras and 4 infrared stripe illuminators. The FIP subsystem contains 4 line CCD cameras and 4 spot illuminators. The FKR subsystem contains 2 matrix CCD cameras and 2 stripe illuminators. The IRK subsystem contains 2 CCD cameras and 2 stripe illuminators. Each system calibration was carried out for their adjustment. On the first step KSIR obtains data from photonic sensors which is valued in internal measurement units. Due to the calibration on the second step non-contact system converts the data to metric measurement system.

A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process

International Nuclear Information System (INIS)

Ji Xu; Li Zhihong; Li Juan; Wang Yangyuan; Xi Jianzhong

2008-01-01

This paper presents a post-CMOS process to monolithically integrate a piezoresistive cantilever for lateral force detection and signal processing circuitry. The fabrication process includes a standard CMOS process and one more lithography step to micromachine the cantilever structure in the post-CMOS process. The piezoresistors are doped in the CMOS process but defined in the post-CMOS micromachining process without any extra process required. A partially split cantilever configuration is developed for the lateral force detection. The piezoresistors are self-aligned to the split cantilever, and therefore the width of the beam is only limited by lithography. Consequently, this kind of cantilever potentially has a high resolution. The preliminary experimental results show expected performances of the fabricated piezoresistors and electronic circuits

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Ristic, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages (HV-MAPS) and high resistivity wafers (HR-MAPS) for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixels with monolithic or hybrid designs concerning their suitability for high rate, fast timing and high radiation operation at LHC. This paper will discuss recent results on the main candidate technologies and the current development towards a monolithic solution.

Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

CMOS voltage references an analytical and practical perspective

CERN Document Server

Kok, Chi-Wah

2013-01-01

A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

Digital Printing Quality Detection and Analysis Technology Based on CCD

Science.gov (United States)

He, Ming; Zheng, Liping

2017-12-01

With the help of CCD digital printing quality detection and analysis technology, it can carry out rapid evaluation and objective detection of printing quality, and can play a certain control effect on printing quality. It can be said CDD digital printing quality testing and analysis of the rational application of technology, its digital printing and printing materials for a variety of printing equipments to improve the quality of a very positive role. In this paper, we do an in-depth study and discussion based on the CCD digital print quality testing and analysis technology.

Latch-up and radiation integrated circuit--LURIC: a test chip for CMOS latch-up investigation

International Nuclear Information System (INIS)

Estreich, D.B.

1978-11-01

A CMOS integrated circuit test chip (Latch-Up and Radiation Integrated Circuit--LURIC) designed for CMOS latch-up and radiation effects research is described. The purpose of LURIC is (a) to provide information on the physics of CMOS latch-up, (b) to study the layout dependence of CMOS latch-up, and (c) to provide special latch-up test structures for the development and verification of a latch-up model. Many devices and test patterns on LURIC are also well suited for radiation effects studies. LURIC contains 86 devices and related test structures. A 12-layer mask set allows both metal gate CMOS and silicon gate ELA (Extended Linear Array) CMOS to be fabricated. Six categories of test devices and related test structures are included. These are (a) the CD4007 metal gate CMOS IC with auxiliary test structures, (b) ELA CMOS cells, (c) field-aided lateral pnp transistors, (d) p-well and substrate spreading resistance test structures, (e) latch-up test structures (simplified symmetrical latch-up paths), and (f) support test patterns (e.g., MOS capacitors, p + n diodes, MOS test transistors, van der Pauw and Kelvin contact resistance test patterns, etc.). A standard probe pattern array has been used on all twenty-four subchips for testing convenience

Experience in CCD Photometry at the Tartu Observatory

Directory of Open Access Journals (Sweden)

Tuvikene T.

2003-12-01

Full Text Available We give overview of the CCD instrumentation and data reduction techniques used at the Tartu Observatory. The first results from photometric observations of the peculiar variable V838 Mon are presented.

Application of X-ray CCD camera in X-ray spot diagnosis of rod-pinch diode

International Nuclear Information System (INIS)

Song Yan; Zhou Ming; Song Guzhou; Ma Jiming; Duan Baojun; Han Changcai; Yao Zhiming

2015-01-01

The pinhole imaging technique is widely used in the measurement of X-ray spot of rod-pinch diode. The X-ray CCD camera, which was composed of film, fiber optic taper and CCD camera, was employed to replace the imaging system based on scintillator, lens and CCD camera in the diagnosis of X-ray spot. The resolution of the X-ray CCD camera was studied. The resolution is restricted by the film and is 5 lp/mm in the test with Pb resolution chart. The frequency is 1.5 lp/mm when the MTF is 0.5 in the test with edge image. The resolution tests indicate that the X-ray CCD camera can meet the requirement of the diagnosis of X-ray spot whose scale is about 1.5 mm when the pinhole imaging magnification is 0.5. At last, the image of X-ray spot was gained and the restoration was implemented in the diagnosis of X-ray spot of rod-pinch diode. (authors)

George E. Pake Prize Lecture: CMOS Technology Roadmap: Is Scaling Ending?

Science.gov (United States)

Chen, Tze-Chiang (T. C.)

The development of silicon technology has been based on the principle of physics and driven by the system needs. Traditionally, the system needs have been satisfied by the increase in transistor density and performance, as suggested by Moore's Law and guided by ''Dennard CMOS scaling theory''. As the silicon industry moves towards the 14nm node and beyond, three of the most important challenges facing Moore's Law and continued CMOS scaling are the growing standby power dissipation, the increasing variability in device characteristics and the ever increasing manufacturing cost. Actually, the first two factors are the embodiments of CMOS approaching atomistic and quantum-mechanical physics boundaries. Industry directions for addressing these challenges are also developing along three primary approaches: Extending silicon scaling through innovations in materials and device structure, expanding the level of integration through three-dimensional structures comprised of through-silicon-vias holes and chip stacking in order to enhance functionality and parallelism and exploring post-silicon CMOS innovation with new nano-devices based on distinctly different principles of physics, new materials and new processes such as spintronics, carbon nanotubes and nanowires. Hence, the infusion of new materials, innovative integration and novel device structures will continue to extend CMOS technology scaling for at least another decade.

Detection of small-amplitude periodic surface pressure fluctuation by pressure-sensitive paint measurements using frequency-domain methods

Science.gov (United States)

Noda, Takahiro; Nakakita, Kazuyki; Wakahara, Masaki; Kameda, Masaharu

2018-06-01

Image measurement using pressure-sensitive paint (PSP) is an effective tool for analyzing the unsteady pressure field on the surface of a body in a low-speed air flow, which is associated with wind noise. In this study, the surface pressure fluctuation due to the tonal trailing edge (TE) noise for a two-dimensional NACA 0012 airfoil was quantitatively detected using a porous anodized aluminum PSP (AA-PSP). The emission from the PSP upon illumination by a blue laser diode was captured using a 12-bit high-speed complementary metal-oxide-semiconductor (CMOS) camera. The intensities of the captured images were converted to pressures using a standard intensity-based method. Three image-processing methods based on the fast Fourier transform (FFT) were tested to determine their efficiency in improving the signal-to-noise ratio (SNR) of the unsteady PSP data. In addition to two fundamental FFT techniques (the full data and ensemble averaging FFTs), a technique using the coherent output power (COP), which involves the cross correlation between the PSP data and the signal measured using a pointwise sound-level meter, was tested. Preliminary tests indicated that random photon shot noise dominates the intensity fluctuations in the captured PSP emissions above 200 Hz. Pressure fluctuations associated with the TE noise, whose dominant frequency is approximately 940 Hz, were successfully measured by analyzing 40,960 sequential PSP images recorded at 10 kfps. Quantitative validation using the power spectrum indicates that the COP technique is the most effective method of identification of the pressure fluctuation directly related to TE noise. It is possible to distinguish power differences with a resolution of 10 Pa^2 (4 Pa in amplitude) when the COP was employed without use of another wind-off data. This resolution cannot be achieved by the ensemble averaging FFT because of an insufficient elimination of the background noise.

The review of radiation effects of γ total dose in CMOS circuits

International Nuclear Information System (INIS)

Chen Panxun; Gao Wenming; Xie Zeyuan; Mi Bang

1992-01-01

Radiation performances of commercial and rad-hard CMOS circuits are reviewed. Threshold voltage, static power current, V in -V out characteristic and propagation delay time related with total dose are presented for CMOS circuits from several manufacturing processes. The performance of radiation-annealing of experimental circuits had been observed for two years. The comparison has been made between the CMOS circuits made in China and the commercial RCA products. 60 Co γ source can serve as γ simulator of the nuclear explosion

Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

Science.gov (United States)

Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

1995-04-01

While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors

An Implantable CMOS Amplifier for Nerve Signals

DEFF Research Database (Denmark)

Nielsen, Jannik Hammel; Lehmann, Torsten

2001-01-01

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

Latch-up control in CMOS integrated circuits

International Nuclear Information System (INIS)

Ochoa, A. Jr.; Estreich, D.B.; Dawes, W.R. Jr.

1979-01-01

The potential for latch-up, a pnpn self-sustaining low impedance state, is inherent in standard bulk CMOS structures. Under normal bias, the parasitic SCR is in its blocking state, but if subjected to a high-voltage spike or if exposed to an ionizing environment, triggering may occur. Prevention of latch-up has been achieved by lifetime control methods such as gold doping or neutron irradiation and by modifying the structure with buried layers. Smaller, next-generation CMOS designs will enhance parasitic action making the problem a concern for other than military or space applications alone. Latch-up control methods presently employed are surveyed. Their adaptability to VSLI designs is analyzed

A GRAPH READER USING A CCD IMAGE SENSOR

African Journals Online (AJOL)

2008-01-18

Jan 18, 2008 ... using a stepper motor controlled by a software program in a ... Keywords: CCD sensor, microcontrollen stepper motor and microcomputer. 1. ... commercial applications (Awcock and ... on-chip amplifier, one pixel at a tirtjie.

C.C.D. readout of a picosecond streak camera with an intensified C.C.D

International Nuclear Information System (INIS)

Lemonier, M.; Richard, J.C.; Cavailler, C.; Mens, A.; Raze, G.

1984-08-01

This paper deals with a digital streak camera readout device. The device consists in a low light level television camera made of a solid state C.C.D. array coupled to an image intensifier associated to a video-digitizer coupled to a micro-computer system. The streak camera images are picked-up as a video signal, digitized and stored. This system allows the fast recording and the automatic processing of the data provided by the streak tube

A novel CMOS SRAM feedback element for SEU environments

International Nuclear Information System (INIS)

Verghese, S.; Wortman, J.J.; Kerns, S.E.

1987-01-01

A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells

Materials Characterization of CIGS solar cells on Top of CMOS chips

NARCIS (Netherlands)

Lu, J.; Liu, W.; Kovalgin, A.Y.; Sun, Y.; Schmitz, J.; Venkatasubramanian, R.; Radousky, H.; Liang, H.

2011-01-01

In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement

Radiation imaging detectors made by wafer post-processing of CMOS chips

NARCIS (Netherlands)

Blanco Carballo, V.M.

2009-01-01

In this thesis several wafer post-processing steps have been applied to CMOS chips. Amplification gas strucutures are built on top of the microchips. A complete radiation imaging detector is obtained this way. Integrated Micromegas-like and GEM-like structures were fabricated on top of Timepix CMOS

Two CMOS BGR using CM and DTMOST techniques

International Nuclear Information System (INIS)

Mohd-Yasin, F.; Teh, Y.K.; Choong, F.; Reaz, M.B.I.

2009-06-01

Two CMOS BGR using current mode (0.044mm 2 ) and Dynamic Threshold MOST (0.017mm 2 ) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating V DD 1.28V at 25 o C; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support V DD range up to 4V required by passive UHF RFID. (author)

A CMOS silicon spin qubit

Science.gov (United States)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Analog filters in nanometer CMOS

CERN Document Server

Uhrmann, Heimo; Zimmermann, Horst

2014-01-01

Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

A digital output accelerometer using MEMS-based piezoelectric accelerometers and arrayed CMOS inverters with satellite capacitors

International Nuclear Information System (INIS)

Kobayashi, T; Okada, H; Maeda, R; Itoh, T; Masuda, T

2011-01-01

The present paper describes the development of a digital output accelerometer composed of microelectromechanical systems (MEMS)-based piezoelectric accelerometers and arrayed complementary metal–oxide–semiconductor (CMOS) inverters accompanied by capacitors. The piezoelectric accelerometers were fabricated from multilayers of Pt/Ti/PZT/Pt/Ti/SiO 2 deposited on silicon-on-insulator (SOI) wafers. The fabricated piezoelectric accelerometers were connected to arrayed CMOS inverters. Each of the CMOS inverters was accompanied by a capacitor with a different capacitance called a 'satellite capacitor'. We have confirmed that the output voltage generated from the piezoelectric accelerometers can vary the output of the CMOS inverters from a high to a low level; the state of the CMOS inverters has turned from the 'off-state' into the 'on-state' when the output voltage of the piezoelectric accelerometers is larger than the threshold voltage of the CMOS inverters. We have also confirmed that the CMOS inverters accompanied by the larger satellite capacitor have become 'on-state' at a lower acceleration. On increasing the acceleration, the number of on-state CMOS inverters has increased. Assuming that the on-state and off-state of CMOS inverters correspond to logic '0' and '1', the present digital output accelerometers have expressed the accelerations of 2.0, 3.0, 5.0, and 5.5 m s −2 as digital outputs of 111, 110, 100, and 000, respectively

Simple BiCMOS CCCTA design and resistorless analog function realization.

Science.gov (United States)

Tangsrirat, Worapong

2014-01-01

The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (R x) and current transfer (i o/i z), are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

Simple BiCMOS CCCTA Design and Resistorless Analog Function Realization

Directory of Open Access Journals (Sweden)

Worapong Tangsrirat

2014-01-01

Full Text Available The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (Rx and current transfer (io/iz, are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

Latch-up in CMOS integrated circuits

International Nuclear Information System (INIS)

Estreich, D.B.; Dutton, R.W.

1978-04-01

An analysis is presented of latch-up in CMOS integrated circuits. A latch-up prediction algorithm has been developed and used to evaluate methods to control latch-up. Experimental verification of the algorithm is demonstrated

CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

2000-08-10

In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

A Nordic project on high speed low power design in sub-micron CMOS technology for mobile phones

DEFF Research Database (Denmark)

Olesen, Ole

circuit design is based on state-of-the-art CMOS technology (0.5µm and below) including circuits operating at 2GHz. CMOS technology is chosen, since a CMOS implementation is likely to be significantly cheaper than a bipolar or a BiCMOS solution, and it offers the possibility to integrate the predominantly...

A CMOS Humidity Sensor for Passive RFID Sensing Applications

Directory of Open Access Journals (Sweden)

Fangming Deng

2014-05-01

Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

A CMOS Humidity Sensor for Passive RFID Sensing Applications

Science.gov (United States)

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-01-01

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

A CMOS humidity sensor for passive RFID sensing applications.

Science.gov (United States)

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-05-16

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

Design and fabrication of a CMOS-compatible MHP gas sensor

Directory of Open Access Journals (Sweden)

Ying Li

2014-03-01

Full Text Available A novel micro-hotplate (MHP gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3% in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

In-flight characterization of the HETE soft X-ray CCD cameras

International Nuclear Information System (INIS)

Prigozhin, G.; Villasenor, J.; Vanderspek, R.; Doty, J.; Crew, G.; Ricker, G.; Jernigan, G.

2003-01-01

We have developed a set of software tools that allow to monitor the performance of the flight X-ray CCD cameras as soon as data arrive at MIT. An emission line at 5.9 keV from the on-board Fe-55 radioactive calibration source is clearly visible in the spectra and provides the means to measure the gain and the noise for each observation in each of the 4 CCD chips in operation. Both parameters can change with time, depending on the phase of the moon and the amount of light leaking into the system. Time vs. position scatter plots were found to be an extremely powerful tool in understanding of the device performance. They illustrate the evolution of the light leaks produced by the dark Earth at the beginning and the end of each orbit. With a bright X-ray source in the field of view the shadow of the mask projected on the surface of the CCD clearly shows the motions of the spacecraft

Desenvolvimento de uma matriz de portas CMOS

OpenAIRE

Jose Geraldo Mendes Taveira

1991-01-01

Resumo: É apresentado o projeto de uma matriz deportas CMOS. O capítulo 11 descreve as etapas de projeto, incluindo desde a escolha da topologia das células internas e de interface, o projeto e a simulação elétrica, até a geração do lay-out. Ocaprtulo III apresenta o projeto dos circuitos de aplicação, incluídos para permitir a validação da matriz. Os circuitos de apl icação são : Oscilador em anel e comparador de códigos. A matriz foi difundida no Primeiro Projeto Multi-Usuário CMOS Brasile...

Protein diffraction experiments with Atlas CCD detector

Czech Academy of Sciences Publication Activity Database

Dohnálek, Jan; Kovaľ, Tomáš; Dušek, Michal

2008-01-01

Roč. 64, Suppl. - abstracts (2008), C192 ISSN 0108-7673. [Congress of the International Union of Crystallography (IUCr) /21./. 23.08.2008-31.08.2008, Osaka] Institutional research plan: CEZ:AV0Z10100521 Keywords : x-ray data collection * CCD detectors * protein crystallography applications Subject RIV: BM - Solid Matter Physics ; Magnetism

Ultralow-loss CMOS copper plasmonic waveguides

DEFF Research Database (Denmark)

Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

2016-01-01

with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

Discussion on the fusing methods for HR and CCD images of CBERS

International Nuclear Information System (INIS)

Gao Zhangsheng; Zhao Yingjun

2010-01-01

CBERS-02B multi-spectral CCD data are different from HR panchromatic data in resolution, which causes difficulty in image fusion. With the method of Pansharping, HPF, Brovey transform, IHS transform, principal component transform, Gram Schmidt (GS) transform and wavelet transform, the authors have tested the fusion methods for CCD data and HR data of CBERS, and the fusion results are discussed and evaluated qualitatively and quantitatively. (authors)

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

Science.gov (United States)

Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B

2017-02-14

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter

Directory of Open Access Journals (Sweden)

Milaim Zabeli

2017-11-01

Full Text Available The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements.

Entirely saturated unilateral smear of laser spot in CCD

International Nuclear Information System (INIS)

Zhang Zhen; Zhou Menglian; Zhang Jianmin; Lin Xinwei

2013-01-01

In the video of linear CCD camera being irradiated by 532 nm CW laser, the entirely saturated unilateral smear of laser spot was found. The smear area does not represent the distribution of laser. Since this smear lies merely in one side of laser spot, it can not be induced by light leaking or carriers blooming, and it may be induced by charge transfer loss. However, the feature that the smear area is entirely saturated can not be explained by the current constant model of charge transfer inefficiency. Based on the inner structure and operating principle of buried channel CCD, a new model of charge transfer inefficiency that varies with charge quantity is proposed, which can explain the entirely saturated unilateral smear of laser spot. (authors)

CCD developed for scientific application by Hamamatsu

CERN Document Server

Miyaguchi, K; Dezaki, J; Yamamoto, K

1999-01-01

We have developed CCDs for scientific applications that feature a low readout noise of less than 5 e-rms and low dark current of 10-25 pA/cm sup 2 at room temperature. CCDs with these characteristics will prove extremely useful in applications such as spectroscopic measurement and dental radiography. In addition, a large-area CCD of 2kx4k pixels and 15 mu m square pixel size has recently been completed for optical use in astronomical observations. Applications to X-ray astronomy require the most challenging device performance in terms of deep depletion, high CTE, and focal plane size, among others. An abuttable X-ray CCD, having 1024x1024 pixels and 24 mu m square pixel size, is to be installed in an international space station (ISS). We are now striving to achieve the lowest usable cooling temperature by means of a built-in TEC with limited power consumption. Details on the development status are described in this report. We would also like to present our future plans for a large active area and deep depleti...

Low-voltage CMOS operational amplifiers theory, design and implementation

CERN Document Server

Sakurai, Satoshi

1995-01-01

Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

Multi-target electrochemical biosensing enabled by integrated CMOS electronics

International Nuclear Information System (INIS)

Rothe, J; Lewandowska, M K; Heer, F; Frey, O; Hierlemann, A

2011-01-01

An integrated electrochemical measurement system, based on CMOS technology, is presented, which allows the detection of several analytes in parallel (multi-analyte) and enables simultaneous monitoring at different locations (multi-site). The system comprises a 576-electrode CMOS sensor chip, an FPGA module for chip control and data processing, and the measurement laptop. The advantages of the highly versatile system are demonstrated by two applications. First, a label-free, hybridization-based DNA sensor is enabled by the possibility of large-scale integration in CMOS technology. Second, the detection of the neurotransmitter choline is presented by assembling the chip with biosensor microprobe arrays. The low noise level enables a limit of detection of, e.g., 0.3 µM choline. The fully integrated system is self-contained: it features cleaning, functionalization and measurement functions without the need for additional electrical equipment. With the power supplied by the laptop, the system is very suitable for on-site measurements

High performance CCD camera system for digitalisation of 2D DIGE gels.

Science.gov (United States)

Strijkstra, Annemieke; Trautwein, Kathleen; Roesler, Stefan; Feenders, Christoph; Danzer, Daniel; Riemenschneider, Udo; Blasius, Bernd; Rabus, Ralf

2016-07-01

An essential step in 2D DIGE-based analysis of differential proteome profiles is the accurate and sensitive digitalisation of 2D DIGE gels. The performance progress of commercially available charge-coupled device (CCD) camera-based systems combined with light emitting diodes (LED) opens up a new possibility for this type of digitalisation. Here, we assessed the performance of a CCD camera system (Intas Advanced 2D Imager) as alternative to a traditionally employed, high-end laser scanner system (Typhoon 9400) for digitalisation of differential protein profiles from three different environmental bacteria. Overall, the performance of the CCD camera system was comparable to the laser scanner, as evident from very similar protein abundance changes (irrespective of spot position and volume), as well as from linear range and limit of detection. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Technical challenges and recent progress in CCD imagers

International Nuclear Information System (INIS)

Bosiers, Jan T.; Peters, Inge M.; Draijer, Cees; Theuwissen, Albert

2006-01-01

This paper gives a review of the performance of charge-coupled device (CCD) imagers for use in consumer, professional and scientific applications. An overview of recent developments and the current state-of-the-art are presented. An extensive list of references is included

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

International Nuclear Information System (INIS)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.

2016-01-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

Science.gov (United States)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

2016-09-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

Energy Technology Data Exchange (ETDEWEB)

Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

2016-09-21

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

A scalable neural chip with synaptic electronics using CMOS integrated memristors

International Nuclear Information System (INIS)

Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

2013-01-01

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal–oxide–semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior. (paper)

Proof of principle study of the use of a CMOS active pixel sensor for proton radiography.

Science.gov (United States)

Seco, Joao; Depauw, Nicolas

2011-02-01

Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissue contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the CMOS detector for protons. The

CCD [charge-coupled device] sensors in synchrotron x-ray detectors

International Nuclear Information System (INIS)

Strauss, M.G.; Naday, I.; Sherman, I.S.; Kraimer, M.R.; Westbrook, E.M.; Zaluzec, N.J.

1987-01-01

The intense photon flux from advanced synchrotron light sources, such as the 7-GeV synchrotron being designed at Argonne, require integrating-type detectors. Charge-coupled devices (CCDs) are well suited as synchrotron x-ray detectors. When irradiated indirectly via a phosphor followed by reducing optics, diffraction patterns of 100 cm 2 can be imaged on a 2 cm 2 CCD. With a conversion efficiency of ∼1 CCD electron/x-ray photon, a peak saturation capacity of >10 6 x rays can be obtained. A programmable CCD controller operating at a clock frequency of 20 MHz has been developed. The readout rate is 5 x 10 6 pixels/s and the shift rate in the parallel registers is 10 6 lines/s. The test detector was evaluated in two experiments. In protein crystallography diffraction patterns have been obtained from a lysozyme crystal using a conventional rotating anode x-ray generator. Based on these results we expect to obtain at a synchrotron diffraction images at the rate of ∼1 frame/s or a complete 3-dimensional data set from a single crystal in ∼2 min. 16 refs., 16 figs., 2 tabs

High-performance visible/UV CCD focal plane technology for spacebased applications

Science.gov (United States)

Burke, B. E.; Mountain, R. W.; Gregory, J. A.; Huang, J. C. M.; Cooper, M. J.; Savoye, E. D.; Kosicki, B. B.

1993-01-01

We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

Science.gov (United States)

2012-05-07

... INTERNATIONAL TRADE COMMISSION [Docket No. 2895] Certain CMOS Image Sensors and Products.... International Trade Commission has received a complaint entitled Certain CMOS Image Sensors and Products... importation, and the sale within the United States after importation of certain CMOS image sensors and...

Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

NARCIS (Netherlands)

Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

2010-01-01

Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

CMOS Time-Resolved, Contact, and Multispectral Fluorescence Imaging for DNA Molecular Diagnostics

Directory of Open Access Journals (Sweden)

Nan Guo

2014-10-01

Full Text Available Instrumental limitations such as bulkiness and high cost prevent the fluorescence technique from becoming ubiquitous for point-of-care deoxyribonucleic acid (DNA detection and other in-field molecular diagnostics applications. The complimentary metal-oxide-semiconductor (CMOS technology, as benefited from process scaling, provides several advanced capabilities such as high integration density, high-resolution signal processing, and low power consumption, enabling sensitive, integrated, and low-cost fluorescence analytical platforms. In this paper, CMOS time-resolved, contact, and multispectral imaging are reviewed. Recently reported CMOS fluorescence analysis microsystem prototypes are surveyed to highlight the present state of the art.

Intensified CCD for ultrafast diagnostics

International Nuclear Information System (INIS)

Cheng, J.; Tripp, G.; Coleman, L.

1978-01-01

Many of the present laser fusion diagnostics are recorded on either ultrafast streak cameras or on oscilloscopes. For those experiments in which a large volume of data is accumulated, direct computer processing of the information becomes important. We describe an approach which uses a RCA 52501 back-thinned CCD sensor to obtain direct electron readouts for both the streak camera and the CRT. Performance of the 100 GHz streak camera and the 4 GHz CRT are presented. Design parameters and computer interfacing for both systems are described in detail

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

Science.gov (United States)

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Implantable optogenetic device with CMOS IC technology for simultaneous optical measurement and stimulation

Science.gov (United States)

Haruta, Makito; Kamiyama, Naoya; Nakajima, Shun; Motoyama, Mayumi; Kawahara, Mamiko; Ohta, Yasumi; Yamasaki, Atsushi; Takehara, Hiroaki; Noda, Toshihiko; Sasagawa, Kiyotaka; Ishikawa, Yasuyuki; Tokuda, Takashi; Hashimoto, Hitoshi; Ohta, Jun

2017-05-01

In this study, we have developed an implantable optogenetic device that can measure and stimulate neurons by an optical method based on CMOS IC technology. The device consist of a blue LED array for optically patterned stimulation, a CMOS image sensor for acquiring brain surface image, and eight green LEDs surrounding the CMOS image sensor for illumination. The blue LED array is placed on the CMOS image sensor. We implanted the device in the brain of a genetically modified mouse and successfully demonstrated the stimulation of neurons optically and simultaneously acquire intrinsic optical images of the brain surface using the image sensor. The integrated device can be used for simultaneously measuring and controlling neuronal activities in a living animal, which is important for the artificial control of brain functions.

Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments

CERN Document Server

Senyukov, Serhiy; Besson, Auguste; Claus, Giles; Cousin, Loic; Dulinski, Wojciech; Goffe, Mathieu; Hippolyte, Boris; Maria, Robert; Molnar, Levente; Sanchez Castro, Xitzel; Winter, Marc

2014-01-01

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch ($\\sim 20 \\mu m$) and low material budget ($\\sim 0.2-0.3\\% X_0$) per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS intrinsic potential. The permanent evolution of commercial CMOS processes towards smaller feature sizes and high resistivity ...

A 205GHz Amplifier in 90nm CMOS Technology

Science.gov (United States)

2017-03-01

10.5dB power gain, Psat of -1.6dBm, and P1dB ≈ -5.8dBm in a standard 90nm CMOS process. Moreover, the design employs internal (layout-based) /external...other advantages, such as low- cost , reliability, and mixed-mode analog/digital chips, intensifying its usage in the mm-wave band [5]. CMOS has several... disadvantages at the higher frequency range with the worst case scenario happening when the device operates near its fmax. This is chiefly due to

An introduction to deep submicron CMOS for vertex applications

CERN Document Server

Campbell, M; Cantatore, E; Faccio, F; Heijne, Erik H M; Jarron, P; Santiard, Jean-Claude; Snoeys, W; Wyllie, K

2001-01-01

Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.

Linear CMOS RF power amplifiers a complete design workflow

CERN Document Server

Ruiz, Hector Solar

2013-01-01

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

PSP SAR interferometry monitoring of ground and structure deformations applied to archaeological sites

Science.gov (United States)

Costantini, Mario; Francioni, Elena; Trillo, Francesco; Minati, Federico; Margottini, Claudio; Spizzichino, Daniele; Trigila, Alessandro; Iadanza, Carla

2017-04-01

Archaeological sites and cultural heritage are considered as critical assets for the society, representing not only the history of region or a culture, but also contributing to create a common identity of people living in a certain region. In this view, it is becoming more and more urgent to preserve them from climate changes effect and in general from their degradation. These structures are usually just as precious as fragile: remote sensing technology can be useful to monitor these treasures. In this work, we will focus on ground deformation measurements obtained by satellite SAR interferometry and on the methodology adopted and implemented in order to use the results operatively for conservation policies in a Italian archaeological site. The analysis is based on the processing of COSMO-SkyMed Himage data by the e-GEOS proprietary Persistent Scatterer Pair (PSP) SAR interferometry technology. The PSP technique is a proven SAR interferometry technology characterized by the fact of exploiting in the processing only the relative properties between close points (pairs) in order to overcome atmospheric artefacts (which are one of the main problems of SAR interferometry). Validations analyses [Costantini et al. 2015] settled that this technique applied to COSMO-SkyMed Himage data is able to retrieve very dense (except of course on vegetated or cultivated areas) millimetric deformation measurements with sub-metric localization. Considering the limitations of all the interferometric techniques, in particular the fact that the measurement are along the line of sight (LOS) and the geometric distortions, in order to obtain the maximum information from interferometric analysis, both ascending and descending geometry have been used. The ascending analysis allows selecting measurements points over the top and, approximately, South-West part of the structures, while the descending one over the top and the South-East part of the structures. The interferometric techniques needs

1 mm3-sized optical neural stimulator based on CMOS integrated photovoltaic power receiver

Science.gov (United States)

Tokuda, Takashi; Ishizu, Takaaki; Nattakarn, Wuthibenjaphonchai; Haruta, Makito; Noda, Toshihiko; Sasagawa, Kiyotaka; Sawan, Mohamad; Ohta, Jun

2018-04-01

In this work, we present a simple complementary metal-oxide semiconductor (CMOS)-controlled photovoltaic power-transfer platform that is suitable for very small (less than or equal to 1-2 mm) electronic devices such as implantable health-care devices or distributed nodes for the Internet of Things. We designed a 1.25 mm × 1.25 mm CMOS power receiver chip that contains integrated photovoltaic cells. We characterized the CMOS-integrated power receiver and successfully demonstrated blue light-emitting diode (LED) operation powered by infrared light. Then, we integrated the CMOS chip and a few off-chip components into a 1-mm3 implantable optogenetic stimulator, and demonstrated the operation of the device.

Rethinking CCD's Significance in Estimating Late Neogene Whole Ocean Carbonate Budget

Science.gov (United States)

Si, W.; Rosenthal, Y.

2017-12-01

The global averaged calcite compensation depth (CCD) record is conventionally used to reconstruct two correlatable parameters of the carbonate system - the alkalinity budget of the ocean and/or the saturation state of the ocean. Accordingly, the available CCD reconstructions have been interpreted to suggest either relative stable (Pearson and Palmer, 2000) or increased alkalinity of the ocean over the past 15 Ma (Tyrrell and Zeebe, 2004; Pälike et al., 2012). However, CCD alone is insufficient to constrain the carbonate system because the weathering flux of alkalinity into the ocean is not only balanced by CaCO3 dissolution on the seafloor but also by the biologic production in the euphotic zone and, the CCD records cannot be readily interpreted as changes in either process. Here, we present evidence of the co-evolution of surface CaCO3 production and deepsea dissolution through the late Neogene. By examining separately the mass accumulation rates (MAR) of coccoliths, planktonic foraminifera, and quantifying dissolution (using a proxy revised from Broecker et al., 1999) in seventeen deepsea cores from multiple depth-transects, we find that 1) MAR of dissolution-resistant coccoliths was substantially higher in the mid Miocene and declining on a global scale towards the present; 2) unlike coccoliths, MAR of planktonic foraminifera, shows no apparent secular trend through that time; 3) the revised dissolution index, shows significantly improved preservation of planktonic foraminiferal shells over that time, particularly at intermediate water depth and exhibits close association between changes in preservation with key climatic events. Our new records have two immediate implications. First, the substantially weakened pelagic biogenic carbonate production from mid Miocene to present alone could account for the improved preservation of deepsea carbonates without calling for a scenario of increased weathering input. Second, with the constrain of global averaged CCD

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

Development of CMOS Imager Block for Capsule Endoscope

International Nuclear Information System (INIS)

Shafie, S; Fodzi, F A M; Tung, L Q; Lioe, D X; Halin, I A; Hasan, W Z W; Jaafar, H

2014-01-01

This paper presents the development of imager block to be associated in a capsule endoscopy system. Since the capsule endoscope is used to diagnose gastrointestinal diseases, the imager block must be in small size which is comfortable for the patients to swallow. In this project, a small size 1.5 V button battery is used as the power supply while the voltage supply requirements for other components such as microcontroller and CMOS image sensor are higher. Therefore, a voltage booster circuit is proposed to boost up the voltage supply from 1.5 V to 3.3 V. A low power microcontroller is used to generate control pulses for the CMOS image sensor and to convert the 8-bits parallel data output to serial data to be transmitted to the display panel. The results show that the voltage booster circuit was able to boost the voltage supply from 1.5 V to 3.3 V. The microcontroller precisely controls the CMOS image sensor to produce parallel data which is then serialized again by the microcontroller. The serial data is then successfully translated to 2fps image and displayed on computer.

Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

OpenAIRE

Hassan Jassim Motlak

2015-01-01

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to...

Measurement of phase function of aerosol at different altitudes by CCD Lidar

Science.gov (United States)

Sun, Peiyu; Yuan, Ke'e.; Yang, Jie; Hu, Shunxing

2018-02-01

The aerosols near the ground are closely related to human health and climate change, the study on which has important significance. As we all know, the aerosol is inhomogeneous at different altitudes, of which the phase function is also different. In order to simplify the retrieval algorithm, it is usually assumed that the aerosol is uniform at different altitudes, which will bring measurement error. In this work, an experimental approach is demonstrated to measure the scattering phase function of atmospheric aerosol particles at different heights by CCD lidar system, which could solve the problem of the traditional CCD lidar system in assumption of phase function. The phase functions obtained by the new experimental approach are used to retrieve the aerosol extinction coefficient profiles. By comparison of the aerosol extinction coefficient retrieved by Mie-scattering aerosol lidar and CCD lidar at night, the reliability of new experimental approach is verified.

Design principles and applications of a cooled CCD camera for electron microscopy.

Science.gov (United States)

Faruqi, A R

1998-01-01

Cooled CCD cameras offer a number of advantages in recording electron microscope images with CCDs rather than film which include: immediate availability of the image in a digital format suitable for further computer processing, high dynamic range, excellent linearity and a high detective quantum efficiency for recording electrons. In one important respect however, film has superior properties: the spatial resolution of CCD detectors tested so far (in terms of point spread function or modulation transfer function) are inferior to film and a great deal of our effort has been spent in designing detectors with improved spatial resolution. Various instrumental contributions to spatial resolution have been analysed and in this paper we discuss the contribution of the phosphor-fibre optics system in this measurement. We have evaluated the performance of a number of detector components and parameters, e.g. different phosphors (and a scintillator), optical coupling with lens or fibre optics with various demagnification factors, to improve the detector performance. The camera described in this paper, which is based on this analysis, uses a tapered fibre optics coupling between the phosphor and the CCD and is installed on a Philips CM12 electron microscope equipped to perform cryo-microscopy. The main use of the camera so far has been in recording electron diffraction patterns from two dimensional crystals of bacteriorhodopsin--from wild type and from different trapped states during the photocycle. As one example of the type of data obtained with the CCD camera a two dimensional Fourier projection map from the trapped O-state is also included. With faster computers, it will soon be possible to undertake this type of work on an on-line basis. Also, with improvements in detector size and resolution, CCD detectors, already ideal for diffraction, will be able to compete with film in the recording of high resolution images.

CMOS-compatible photonic devices for single-photon generation

Directory of Open Access Journals (Sweden)

Xiong Chunle

2016-09-01

Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Design rules for RCA self-aligned silicon-gate CMOS/SOS process

Science.gov (United States)

1977-01-01

The CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules.

CMOS technology: a critical enabler for free-form electronics-based killer applications

Science.gov (United States)

Hussain, Muhammad M.; Hussain, Aftab M.; Hanna, Amir

2016-05-01

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today's CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics - and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path.

CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

Science.gov (United States)

Rimoldi, M.

2017-12-01

The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog amplification and digital processing in the same silicon wafer. The radiation hardness is improved thanks to multiple nested wells which give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC . A number of alternative solutions have been explored and characterised. In this document, test results of the sensors fabricated in different CMOS processes are reported.

Analysis of the resistive network in a bio-inspired CMOS vision chip

Science.gov (United States)

Kong, Jae-Sung; Sung, Dong-Kyu; Hyun, Hyo-Young; Shin, Jang-Kyoo

2007-12-01

CMOS vision chips for edge detection based on a resistive circuit have recently been developed. These chips help develop neuromorphic systems with a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends dominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the MOSFET for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160×120 CMOS vision chips have been fabricated by using a standard CMOS technology. The experimental results have been nicely matched with our prediction.

CMOS VHF transconductance-C lowpass filter

NARCIS (Netherlands)

Nauta, Bram

1990-01-01

Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

Determining the thermal expansion coefficient of thin films for a CMOS MEMS process using test cantilevers

International Nuclear Information System (INIS)

Cheng, Chao-Lin; Fang, Weileun; Tsai, Ming-Han

2015-01-01

Many standard CMOS processes, provided by existing foundries, are available. These standard CMOS processes, with stacking of various metal and dielectric layers, have been extensively applied in integrated circuits as well as micro-electromechanical systems (MEMS). It is of importance to determine the material properties of the metal and dielectric films to predict the performance and reliability of micro devices. This study employs an existing approach to determine the coefficients of thermal expansion (CTEs) of metal and dielectric films for standard CMOS processes. Test cantilevers with different stacking of metal and dielectric layers for standard CMOS processes have been designed and implemented. The CTEs of standard CMOS films can be determined from measurements of the out-of-plane thermal deformations of the test cantilevers. To demonstrate the feasibility of the present approach, thin films prepared by the Taiwan Semiconductor Manufacture Company 0.35 μm 2P4M CMOS process are characterized. Eight test cantilevers with different stacking of CMOS layers and an auxiliary Si cantilever on a SOI wafer are fabricated. The equivalent elastic moduli and CTEs of the CMOS thin films including the metal and dielectric layers are determined, respectively, from the resonant frequency and static thermal deformation of the test cantilevers. Moreover, thermal deformations of cantilevers with stacked layers different to those of the test beams have been employed to verify the measured CTEs and elastic moduli. (paper)

Real-time tricolor phase measuring profilometry based on CCD sensitivity calibration

Science.gov (United States)

Zhu, Lin; Cao, Yiping; He, Dawu; Chen, Cheng

2017-02-01

A real-time tricolor phase measuring profilometry (RTPMP) based on charge coupled device (CCD) sensitivity calibration is proposed. Only one colour fringe pattern whose red (R), green (G) and blue (B) components are, respectively, coded as three sinusoidal phase-shifting gratings with an equivalent shifting phase of 2π/3 is needed and sent to an appointed flash memory on a specialized digital light projector (SDLP). A specialized time-division multiplexing timing sequence actively controls the SDLP to project the fringe patterns in R, G and B channels sequentially onto the measured object in one over seventy-two of a second and meanwhile actively controls a high frame rate monochrome CCD camera to capture the corresponding deformed patterns synchronously with the SDLP. So the sufficient information for reconstructing the three-dimensional (3D) shape in one over twenty-four of a second is obtained. Due to the different spectral sensitivity of the CCD camera to RGB lights, the captured deformed patterns from R, G and B channels cannot share the same peak and valley, which will lead to lower accuracy or even failing to reconstruct the 3D shape. So a deformed pattern amending method based on CCD sensitivity calibration is developed to guarantee the accurate 3D reconstruction. The experimental results verify the feasibility of the proposed RTPMP method. The proposed RTPMP method can obtain the 3D shape at over the video frame rate of 24 frames per second, avoid the colour crosstalk completely and be effective for measuring real-time changing object.

77 FR 74513 - Certain CMOS Image Sensors and Products Containing Same; Investigations: Terminations...

Science.gov (United States)

2012-12-14

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-846] Certain CMOS Image Sensors and Products Containing Same; Investigations: Terminations, Modifications and Rulings AGENCY: U.S... United States after importation of certain CMOS image sensors and products containing the same based on...

Performance simulation and analysis of a CMOS/nano hybrid nanoprocessor system

International Nuclear Information System (INIS)

Cabe, Adam C; Das, Shamik

2009-01-01

This paper provides detailed simulation results and analysis of the prospective performance of hybrid CMOS/nanoelectronic processor systems based upon the field-programmable nanowire interconnect (FPNI) architecture. To evaluate this architecture, a complete design was developed for an FPNI implementation using 90 nm CMOS with 15 nm wide nanowire interconnects. Detailed simulations of this design illustrate that critical design choices and tradeoffs exist beyond those specified by the architecture. This includes the selection of the types of junction nanodevices, as well as the implementation of low-level circuits. In particular, the simulation results presented here show that only nanodevices with an 'on/off' current ratio of 200 or more are suitable to produce correct system-level behaviour. Furthermore, the design of the CMOS logic gates in the FPNI system must be customized to accommodate the resistances of both 'on'-state and 'off'-state nanodevices. Using these customized designs together with models of suitable nanodevices, additional simulations demonstrate that, relative to conventional 90 nm CMOS FPGA systems, performance gains can be obtained of up to 70% greater speed or up to a ninefold reduction in energy consumption.

Design considerations for a new, high resolution Micro-Angiographic Fluoroscope based on a CMOS sensor (MAF-CMOS).

Science.gov (United States)

Loughran, Brendan; Swetadri Vasan, S N; Singh, Vivek; Ionita, Ciprian N; Jain, Amit; Bednarek, Daniel R; Titus, Albert; Rudin, Stephen

2013-03-06

The detectors that are used for endovascular image-guided interventions (EIGI), particularly for neurovascular interventions, do not provide clinicians with adequate visualization to ensure the best possible treatment outcomes. Developing an improved x-ray imaging detector requires the determination of estimated clinical x-ray entrance exposures to the detector. The range of exposures to the detector in clinical studies was found for the three modes of operation: fluoroscopic mode, high frame-rate digital angiographic mode (HD fluoroscopic mode), and DSA mode. Using these estimated detector exposure ranges and available CMOS detector technical specifications, design requirements were developed to pursue a quantum limited, high resolution, dynamic x-ray detector based on a CMOS sensor with 50 μm pixel size. For the proposed MAF-CMOS, the estimated charge collected within the full exposure range was found to be within the estimated full well capacity of the pixels. Expected instrumentation noise for the proposed detector was estimated to be 50-1,300 electrons. Adding a gain stage such as a light image intensifier would minimize the effect of the estimated instrumentation noise on total image noise but may not be necessary to ensure quantum limited detector operation at low exposure levels. A recursive temporal filter may decrease the effective total noise by 2 to 3 times, allowing for the improved signal to noise ratios at the lowest estimated exposures despite consequent loss in temporal resolution. This work can serve as a guide for further development of dynamic x-ray imaging prototypes or improvements for existing dynamic x-ray imaging systems.

CMOS analog integrated circuits high-speed and power-efficient design

CERN Document Server

Ndjountche, Tertulien

2011-01-01

High-speed, power-efficient analog integrated circuits can be used as standalone devices or to interface modern digital signal processors and micro-controllers in various applications, including multimedia, communication, instrumentation, and control systems. New architectures and low device geometry of complementary metaloxidesemiconductor (CMOS) technologies have accelerated the movement toward system on a chip design, which merges analog circuits with digital, and radio-frequency components. CMOS: Analog Integrated Circuits: High-Speed and Power-Efficient Design describes the important tren

Development of online cable eccentricity detection system based on X-ray CCD

International Nuclear Information System (INIS)

Chen Jianzhen; Li Bin; Wei Kaixia; Guo Lanying; Qu Guopu

2008-01-01

An improved technology of online cable eccentricity detection, based on X-ray CCD, greatly improves the measuring precision and the responding speed. The theory of eccentricity measuring based on X-ray CCD, and the structure of an apparatus are described. The apparatus is composed of scanning drive subsystem, X-ray generation components, data acquiring subsystem and high performance computer system. The measuring results are also presented. The features of this cable eccentricity detection technology are compared with the features of other technologies. (authors)

Development of a Portable 3CCD Camera System for Multispectral Imaging of Biological Samples

Science.gov (United States)

Lee, Hoyoung; Park, Soo Hyun; Noh, Sang Ha; Lim, Jongguk; Kim, Moon S.

2014-01-01

Recent studies have suggested the need for imaging devices capable of multispectral imaging beyond the visible region, to allow for quality and safety evaluations of agricultural commodities. Conventional multispectral imaging devices lack flexibility in spectral waveband selectivity for such applications. In this paper, a recently developed portable 3CCD camera with significant improvements over existing imaging devices is presented. A beam-splitter prism assembly for 3CCD was designed to accommodate three interference filters that can be easily changed for application-specific multispectral waveband selection in the 400 to 1000 nm region. We also designed and integrated electronic components on printed circuit boards with firmware programming, enabling parallel processing, synchronization, and independent control of the three CCD sensors, to ensure the transfer of data without significant delay or data loss due to buffering. The system can stream 30 frames (3-waveband images in each frame) per second. The potential utility of the 3CCD camera system was demonstrated in the laboratory for detecting defect spots on apples. PMID:25350510

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Science.gov (United States)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Investigation of Unsteady Pressure-Sensitive Paint (uPSP) and a Dynamic Loads Balance to Predict Launch Vehicle Buffet Environments

Science.gov (United States)

Schuster, David M.; Panda, Jayanta; Ross, James C.; Roozeboom, Nettie H.; Burnside, Nathan J.; Ngo, Christina L.; Kumagai, Hiro; Sellers, Marvin; Powell, Jessica M.; Sekula, Martin K.;

A back-illuminated megapixel CMOS image sensor

Science.gov (United States)

Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

2005-01-01

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

The OCA CCD Camera Controller

Science.gov (United States)

1996-01-01

multi CCD arrays for wide field telescopes with an array of 8x8 1K CCDs in use at Las Campanas Observatory in Chile . The same group is also involved...Verify key EPROM -292H VIH . VIH Program security bitl 1 29AH . VPP Program security’ bit 2 *. .298H -Vpp Verify security bits - 9HVIH ViI NOTE: 1...Pulsed from V.. to VIL and returned to VIH . EPROM PROGRAMMING AND VERIFICATION ..t= 21’C to-+27 ’rC:-VCC= 5V ±10%VS3 = OV. SYMBOL I .-- PARAMETER MIN MAX

RF Circuit Design in Nanometer CMOS

NARCIS (Netherlands)

Nauta, Bram

2007-01-01

With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

Science.gov (United States)

Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

2005-04-01

We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

Micrometer and CCD measurements of double stars (Series 51

Directory of Open Access Journals (Sweden)

Popović G.M.

1998-01-01

Full Text Available 36 micrometric measurements of 20 double or multiple systems carried out with the Zeiss 65/1055 cm Refractor of Belgrade Observatory are communicated. Also 35 CCD measurements of 15 double or multiple systems are included.

A Biologically Inspired CMOS Image Sensor

CERN Document Server

Sarkar, Mukul

2013-01-01

Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

STIS-01 CCD Functional

Science.gov (United States)

Valenti, Jeff

2001-07-01

This activity measures the baseline performance and commandability of the CCD subsystem. Only primary amplifier D is used. Bias, Dark, and Flat Field exposures are taken in order to measure read noise, dark current, CTE, and gain. Numerous bias frames are taken to permit construction of "superbias" frames in which the effects of read noise have been rendered negligible. Dark exposures are made outside the SAA. Full frame and binned observations are made, with binning factors of 1x1 and 2x2. Finally, tungsten lamp exposures are taken through narrow slits to confirm the slit positions in the current database. All exposures are internals. This is a reincarnation of SM3A proposal 8502 with some unnecessary tests removed from the program.

A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

Science.gov (United States)

Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

2016-08-01

This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process.

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

Science.gov (United States)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

CMOS technology: a critical enabler for free-form electronics-based killer applications

KAUST Repository

Hussain, Muhammad Mustafa

2016-05-17

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today’s CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics – and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is

Two-dimensional spectrophotometry of planetary nebulae by CCD imaging

International Nuclear Information System (INIS)

Jacoby, G.H.; Africano, J.L.; Quigley, R.J.; Western Washington Univ., Bellingham, WA)

1987-01-01

The spatial distribution of the electron temperature and density and the ionic abundances of O(+), O(2+), N(+), and S(+) have been derived from CCD images of the planetary nebulae NGC 40 and NGC 6826 taken in the important emission lines of forbidden O II, forbidden O III, H-beta, forbidden N II, and forbidden S II. The steps required in the derivation of the absolute fluxes, line, ratios, and ionic abundances are outlined and then discussed in greater detail. The results show that the CCD imaging technique for two-dimensional spectrophotometry can effectively compete with classical spectrophotometry, providing the added benefits of complete spatial coverage at seeing-disk spatial resolution. The multiplexing in the spatial dimension, however, results in a loss of spectral information, since only one emission line is observed at any one time. 37 references

Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

NARCIS (Netherlands)

Acar, M.

2011-01-01

In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

Nanocantilever based mass sensor integrated with cmos circuitry

DEFF Research Database (Denmark)

Davis, Zachary James; Abadal, G.; Campabadal, F.

2003-01-01

We have demonstrated the successful integration of a cantilever based mass detector with standard CMOS circuitry. The purpose of the circuitry is to facilitate the readout of the cantilever's deflection in order to measure resonant frequency shifts of the cantilever. The principle and design...... of the mass detector are presented showing that miniaturization of such cantilever based resonant devices leads to highly sensitive mass sensors, which have the potential to detect single molecules. The design of the readout circuitry used for the first electrical characterization of an integrated cantilever...... with CMOS circuitry is demonstrated. The electrical characterization of the device shows that the resonant behavior of the cantilever depends on the applied voltages, which corresponds to theory....

Optimization Design Method for the CMOS-type Capacitive Micro-Machined Ultrasonic Transducer

Directory of Open Access Journals (Sweden)

D. Y. Chiou

2011-12-01

Full Text Available In this study, an integrated modeling technique for characterization and optimization design of the complementary metal-oxide-semiconductor (CMOS capacitive micro-arrayed ultrasonic transducer (pCMOS-CMUT is presented. Electromechanical finite element simulations are performed to investigate its operational characteristics, such as the collapse voltage and the resonant frequency. Both the numerical and experimental results are in good agreement. In order to simultaneously customize the resonant frequency and minimize the collapse voltage, the genetic algorithm (GA is applied to optimize dimensional parameters of the transducer. From the present results, it is concluded that the FE/GA coupling approach provides another efficient numerical tool for multi-objective design of the pCMOS-CMUT.

A fluorescent screen + CCD system for quality assurance of therapeutic scanned ion beams

Energy Technology Data Exchange (ETDEWEB)

Takeshita, E., E-mail: eriuli@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Furukawa, T., E-mail: t_furu@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Inaniwa, T., E-mail: taku@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Sato, S., E-mail: shin_s@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Himukai, T., E-mail: himukai@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Shirai, T., E-mail: t_shirai@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Noda, K., E-mail: noda_k@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan)

2011-12-15

A fluorescent screen + a charge coupled device (CCD) system were developed to verify the performance of scanned ion beams at the HIMAC. The fluorescent light from the screen is observed by the CCD camera. Two-dimensional fields, produced by the scanning process, i.e., the position and the size of the beam for each scan, represent of the important issues in scanning irradiation. In the developed system, the two-dimensional relative fluence and the flatness of the irradiation field were measured in a straightforward technique from the luminance distribution on the screen. The position and the size of the beams were obtained from centroid computation results of the brightness. By the good sensitivity and spatial resolution of the fluorescent screen + CCD system, the scanned ion beams were verified as the measurements at the HIMAC prototype scanning system.

A fluorescent screen + CCD system for quality assurance of therapeutic scanned ion beams

Science.gov (United States)

Takeshita, E.; Furukawa, T.; Inaniwa, T.; Sato, S.; Himukai, T.; Shirai, T.; Noda, K.

2011-12-01

A fluorescent screen + a charge coupled device (CCD) system were developed to verify the performance of scanned ion beams at the HIMAC. The fluorescent light from the screen is observed by the CCD camera. Two-dimensional fields, produced by the scanning process, i.e., the position and the size of the beam for each scan, represent of the important issues in scanning irradiation. In the developed system, the two-dimensional relative fluence and the flatness of the irradiation field were measured in a straightforward technique from the luminance distribution on the screen. The position and the size of the beams were obtained from centroid computation results of the brightness. By the good sensitivity and spatial resolution of the fluorescent screen + CCD system, the scanned ion beams were verified as the measurements at the HIMAC prototype scanning system.

Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

Energy Technology Data Exchange (ETDEWEB)

Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

2015-07-01

CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

Science.gov (United States)

Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

2012-08-01

An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

SlCCD7 controls strigolactone biosynthesis, shoot branching and mycorrhiza-induced apocarotenoid formation in tomato.

NARCIS (Netherlands)

Vogel, J.T.; Walter, M.H.; Giavalisco, P.; Lytovchenko, A.; Kohlen, W.; Charnikhova, T.; Simkin, A.J.; Goulet, C.; Strack, D.; Bouwmeester, H.J.; Fernie, A.R.; Klee, H.J.

2010-01-01

The regulation of shoot branching is an essential determinant of plant architecture, integrating multiple external and internal signals. One of the signaling pathways regulating branching involves the MAX (more axillary branches) genes. Two of the genes within this pathway, MAX3/CCD7 and MAX4/CCD8,

A goggle navigation system for cancer resection surgery

Science.gov (United States)

Xu, Junbin; Shao, Pengfei; Yue, Ting; Zhang, Shiwu; Ding, Houzhu; Wang, Jinkun; Xu, Ronald

2014-02-01

We describe a portable fluorescence goggle navigation system for cancer margin assessment during oncologic surgeries. The system consists of a computer, a head mount display (HMD) device, a near infrared (NIR) CCD camera, a miniature CMOS camera, and a 780 nm laser diode excitation light source. The fluorescence and the background images of the surgical scene are acquired by the CCD camera and the CMOS camera respectively, co-registered, and displayed on the HMD device in real-time. The spatial resolution and the co-registration deviation of the goggle navigation system are evaluated quantitatively. The technical feasibility of the proposed goggle system is tested in an ex vivo tumor model. Our experiments demonstrate the feasibility of using a goggle navigation system for intraoperative margin detection and surgical guidance.

Nanosecond-laser induced crosstalk of CMOS image sensor

Science.gov (United States)

Zhu, Rongzhen; Wang, Yanbin; Chen, Qianrong; Zhou, Xuanfeng; Ren, Guangsen; Cui, Longfei; Li, Hua; Hao, Daoliang

2018-02-01

The CMOS Image Sensor (CIS) is photoelectricity image device which focused the photosensitive array, amplifier, A/D transfer, storage, DSP, computer interface circuit on the same silicon substrate[1]. It has low power consumption, high integration,low cost etc. With large scale integrated circuit technology progress, the noise suppression level of CIS is enhanced unceasingly, and its image quality is getting better and better. It has been in the security monitoring, biometrice, detection and imaging and even military reconnaissance and other field is widely used. CIS is easily disturbed and damaged while it is irradiated by laser. It is of great significance to study the effect of laser irradiation on optoelectronic countermeasure and device for the laser strengthening resistance is of great significance. There are some researchers have studied the laser induced disturbed and damaged of CIS. They focused on the saturation, supersaturated effects, and they observed different effects as for unsaturation, saturation, supersaturated, allsaturated and pixel flip etc. This paper research 1064nm laser interference effect in a typical before type CMOS, and observring the saturated crosstalk and half the crosstalk line. This paper extracted from cmos devices working principle and signal detection methods such as the Angle of the formation mechanism of the crosstalk line phenomenon are analyzed.

CMOS Receiver Front-ends for Gigabit Short-Range Optical Communications

CERN Document Server

Aznar, Francisco; Calvo Lopez, Belén

2013-01-01

This book describes optical receiver solutions integrated in standard CMOS technology, attaining high-speed short-range transmission within cost-effective constraints.  These techniques support short reach applications, such as local area networks, fiber-to-the-home and multimedia systems in cars and homes. The authors show how to implement the optical front-end in the same technology as the subsequent digital circuitry, leading to integration of the entire receiver system in the same chip.  The presentation focuses on CMOS receiver design targeting gigabit transmission along a low-cost, standardized plastic optical fiber up to 50m in length.  This book includes a detailed study of CMOS optical receiver design – from building blocks to the system level. Reviews optical communications, including long-haul transmission systems and emerging applications focused on short-range; Explains necessary fundamentals, such as characteristics of a data signal, system requirements affecting receiver design and key par...

From vertex detectors to inner trackers with CMOS pixel sensors

CERN Document Server

Besson, A.

2017-01-01

The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

Designing a robust high-speed CMOS-MEMS capacitive humidity sensor

International Nuclear Information System (INIS)

Lazarus, N; Fedder, G K

2012-01-01

In our previous work (Lazarus and Fedder 2011 J. Micromech. Microeng. 21 0650281), we demonstrated a CMOS-MEMS capacitive humidity sensor with a 72% improvement in sensitivity over the highest previously integrated on a CMOS die. This paper explores a series of methods for creating a faster and more manufacturable high-sensitivity capacitive humidity sensor. These techniques include adding oxide pillars to hold the plates apart, spin coating polymer to allow sensors to be fabricated more cheaply, adding a polysilicon heater and etching away excess polymer in the release holes. In most cases a tradeoff was found between sensitivity and other factors such as response time or robustness. A robust high-speed sensor was designed with a sensitivity of 0.21% change in capacitance per per cent relative humidity, while dropping the response time constant from 70 to 4s. Although less sensitive than our design, the sensor remains 17% more sensitive than the most sensitive interdigitated designs successfully integrated with CMOS. (paper)

Characterization of TCHQ-induced genotoxicity and mutagenesis using the pSP189 shuttle vector in mammalian cells

Energy Technology Data Exchange (ETDEWEB)

Wang Jing, E-mail: avaecn@gmail.com [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Yu Shouyi [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Jiao Shouhai [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Shandong Institute of Endocrine and Metabolic Diseases, Shandong Academy of Medical Sciences, Jinan 250062 (China); Lv Xiaowen [Feed Safety Reference Laboratory of Ministry of Agriculture, Feed Research Institute, Chinese Academy of Agricultural Sciences, Beijing 100081 (China); Ma Min [Laboratory of Environmental Biotechnology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Zhu Benzhan; Du Yuguo [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

2012-01-03

Tetrachlorohydroquinone (TCHQ) is a major toxic metabolite of the widely used wood preservative, pentachlorophenol (PCP), and it has also been implicated in PCP genotoxicity. However, the underlying mechanisms of genotoxicity and mutagenesis induced by TCHQ remain unclear. In this study, we examined the genotoxicity of TCHQ by using comet assays to detect DNA breakage and formation of TCHQ-DNA adducts. Then, we further verified the levels of mutagenesis by using the pSP189 shuttle vector in A549 human lung carcinoma cells. We demonstrated that TCHQ causes significant genotoxicity by inducing DNA breakage and forming DNA adducts. Additionally, DNA sequence analysis of the TCHQ-induced mutations revealed that 85.36% were single base substitutions, 9.76% were single base insertions, and 4.88% were large fragment deletions. More than 80% of the base substitutions occurred at G:C base pairs, and the mutations were G:C to C:G, G:C to T:A or G:C to A:T transversions and transitions. The most common types of mutations in A549 cells were G:C to A:T (37.14%) and A:T to C:G transitions (14.29%) and G:C to C:G (34.29%) and G:C to T:A (11.43%) transversions. We identified hotspots at nucleotides 129, 141, and 155 in the supF gene of plasmid pSP189. These mutation hotspots accounted for 63% of all single base substitutions. We conclude that TCHQ induces sequence-specific DNA mutations at high frequencies. Therefore, the safety of using this product would be carefully examined.

Real-time DNA Amplification and Detection System Based on a CMOS Image Sensor.

Science.gov (United States)

Wang, Tiantian; Devadhasan, Jasmine Pramila; Lee, Do Young; Kim, Sanghyo

2016-01-01

In the present study, we developed a polypropylene well-integrated complementary metal oxide semiconductor (CMOS) platform to perform the loop mediated isothermal amplification (LAMP) technique for real-time DNA amplification and detection simultaneously. An amplification-coupled detection system directly measures the photon number changes based on the generation of magnesium pyrophosphate and color changes. The photon number decreases during the amplification process. The CMOS image sensor observes the photons and converts into digital units with the aid of an analog-to-digital converter (ADC). In addition, UV-spectral studies, optical color intensity detection, pH analysis, and electrophoresis detection were carried out to prove the efficiency of the CMOS sensor based the LAMP system. Moreover, Clostridium perfringens was utilized as proof-of-concept detection for the new system. We anticipate that this CMOS image sensor-based LAMP method will enable the creation of cost-effective, label-free, optical, real-time and portable molecular diagnostic devices.

Development of a lens-coupled CMOS detector for an X-ray inspection system

International Nuclear Information System (INIS)

Kim, Ho Kyung; Ahn, Jung Keun; Cho, Gyuseong

2005-01-01

A digital X-ray imaging detector based on a complementary metal-oxide-semiconductor (CMOS) image sensor has been developed for X-ray non-destructive inspection applications. This is a cost-effective solution because of the availability of cheap commercial standard CMOS image sensors. The detector configuration adopts an indirect X-ray detection method by using scintillation material and lens assembly. As a feasibility test of the developed lens-coupled CMOS detector as an X-ray inspection system, we have acquired X-ray projection images under a variety of imaging conditions. The results show that the projected image is reasonably acceptable in typical non-destructive testing (NDT). However, the developed detector may not be appropriate for laminography due to a low light-collection efficiency of lens assembly. In this paper, construction of the lens-coupled CMOS detector and its specifications are described, and the experimental results are presented. Using the analysis of quantum accounting diagram, inefficiency of the lens-coupling method is discussed

Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

NARCIS (Netherlands)

Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

Monolithic CMOS imaging x-ray spectrometers

Science.gov (United States)

Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

2014-07-01

The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

New low noise CCD cameras for Pi-of-the-Sky project

Science.gov (United States)

Kasprowicz, G.; Czyrkowski, H.; Dabrowski, R.; Dominik, W.; Mankiewicz, L.; Pozniak, K.; Romaniuk, R.; Sitek, P.; Sokolowski, M.; Sulej, R.; Uzycki, J.; Wrochna, G.

2006-10-01

Modern research trends require observation of fainter and fainter astronomical objects on large areas of the sky. This implies usage of systems with high temporal and optical resolution with computer based data acquisition and processing. Therefore Charge Coupled Devices (CCD) became so popular. They offer quick picture conversion with much better quality than film based technologies. This work is theoretical and practical study of the CCD based picture acquisition system. The system was optimized for "Pi of The Sky" project. But it can be adapted to another professional astronomical researches. The work includes issue of picture conversion, signal acquisition, data transfer and mechanical construction of the device.

Radiation Dose-Rate Extraction from the Camera Image of Quince 2 Robot System using Optical Character Recognition

International Nuclear Information System (INIS)

Cho, Jai Wan; Jeong, Kyung Min

2012-01-01

In the case of the Japanese Quince 2 robot system, 7 CCD/CMOS cameras were used. 2 CCD cameras of Quince robot are used for the forward and backward monitoring of the surroundings during navigation. And 2 CCD (or CMOS) cameras are used for monitoring the status of front-end and back-end motion mechanics such as flippers and crawlers. A CCD camera with wide field of view optics is used for monitoring the status of the communication (VDSL) cable reel. And another 2 CCD cameras are assigned for reading the indication value of the radiation dosimeter and the instrument. The Quince 2 robot measured radiation in the unit 2 reactor building refueling floor of the Fukushima nuclear power plant. The CCD camera with wide field-of-view (fisheye) lens reads indicator of the dosimeter loaded on the Quince 2 robot, which was sent to carry out investigating the unit 2 reactor building refueling floor situation. The camera image with gamma ray dose-rate information is transmitted to the remote control site via VDSL communication line. At the remote control site, the radiation information in the unit 2 reactor building refueling floor can be perceived by monitoring the camera image. To make up the radiation profile in the surveyed refueling floor, the gamma ray dose-rate information in the image should be converted to numerical value. In this paper, we extract the gamma ray dose-rate value in the unit 2 reactor building refueling floor using optical character recognition method

Radiation Dose-Rate Extraction from the Camera Image of Quince 2 Robot System using Optical Character Recognition

Energy Technology Data Exchange (ETDEWEB)

Cho, Jai Wan; Jeong, Kyung Min [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-05-15

In the case of the Japanese Quince 2 robot system, 7 CCD/CMOS cameras were used. 2 CCD cameras of Quince robot are used for the forward and backward monitoring of the surroundings during navigation. And 2 CCD (or CMOS) cameras are used for monitoring the status of front-end and back-end motion mechanics such as flippers and crawlers. A CCD camera with wide field of view optics is used for monitoring the status of the communication (VDSL) cable reel. And another 2 CCD cameras are assigned for reading the indication value of the radiation dosimeter and the instrument. The Quince 2 robot measured radiation in the unit 2 reactor building refueling floor of the Fukushima nuclear power plant. The CCD camera with wide field-of-view (fisheye) lens reads indicator of the dosimeter loaded on the Quince 2 robot, which was sent to carry out investigating the unit 2 reactor building refueling floor situation. The camera image with gamma ray dose-rate information is transmitted to the remote control site via VDSL communication line. At the remote control site, the radiation information in the unit 2 reactor building refueling floor can be perceived by monitoring the camera image. To make up the radiation profile in the surveyed refueling floor, the gamma ray dose-rate information in the image should be converted to numerical value. In this paper, we extract the gamma ray dose-rate value in the unit 2 reactor building refueling floor using optical character recognition method

Numerical simulations and analyses of temperature control loop heat pipe for space CCD camera

Science.gov (United States)

Meng, Qingliang; Yang, Tao; Li, Chunlin

2016-10-01

As one of the key units of space CCD camera, the temperature range and stability of CCD components affect the image's indexes. Reasonable thermal design and robust thermal control devices are needed. One kind of temperature control loop heat pipe (TCLHP) is designed, which highly meets the thermal control requirements of CCD components. In order to study the dynamic behaviors of heat and mass transfer of TCLHP, particularly in the orbital flight case, a transient numerical model is developed by using the well-established empirical correlations for flow models within three dimensional thermal modeling. The temperature control principle and details of mathematical model are presented. The model is used to study operating state, flow and heat characteristics based upon the analyses of variations of temperature, pressure and quality under different operating modes and external heat flux variations. The results indicate that TCLHP can satisfy the thermal control requirements of CCD components well, and always ensure good temperature stability and uniformity. By comparison between flight data and simulated results, it is found that the model is to be accurate to within 1°C. The model can be better used for predicting and understanding the transient performance of TCLHP.

CCD photometry of apparent dwarf galaxies in Fornax

International Nuclear Information System (INIS)

Phillipps, S.; Grimley, P.L.; Disney, M.J.; Cawson, M.G.M.; Kibblewhite, E.J.

1986-01-01

Blue and red CCD surface photometry of two apparent dwarf galaxies in the Fornax cluster region is presented. Luminosity profiles are derived and their form discussed. The fainter galaxy resembles an archetypal diffuse dwarf elliptical but the brighter of the pair is either an unusual red dwarf or a background galaxy in chance juxtaposition. (author)

A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.

Science.gov (United States)

Kim, Kuk-Hwan; Gaba, Siddharth; Wheeler, Dana; Cruz-Albrecht, Jose M; Hussain, Tahir; Srinivasa, Narayan; Lu, Wei

2012-01-11

Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme. © 2011 American Chemical Society

Scaling Rule for Very Shallow Trench IGBT toward CMOS Process Compatibility

OpenAIRE

Tanaka, Masahiro; Omura, Ichiro

2012-01-01

Deep trench gate is used for latest IGBT to improve device performance. By large difference from deep submicron CMOS structure, there is no process compatibility among CMOS device and trench gate IGBT. We propose IGBT scaling rule for shrinking IGBT cell structure both horizontally and vertically. The scaling rule is theoretically delivered by structure based equations. Device performance improvement was also predicted by TCAD simulations even with very shallow trench gate. The rule enables t...

Radiation effects of protons and 60Co γ rays on CMOS operational amplifier

International Nuclear Information System (INIS)

Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Yan Rongliang

1997-01-01

Radiation effects of 60 Co γ ray and 4,7 and 30 MeV protons on LF 7650 CMOS operational amplifier were investigated. The damage mechanism of LF7650 was discussed. It is indicated that the mobility reduction of major carrier caused by ionizing and displacement damage is the chief mechanism causing the failure of CMOS operational amplifier irradiated by protons, and that is why the degradation of LF 7650 caused by protons is much more serious than that caused by 60 Co γ ray. In addition, a comparison of proton radiation effects on CMOS operational amplifier and MOSFET showed a significant difference in mechanism

The development of high-speed 100 fps CCD camera

International Nuclear Information System (INIS)

Hoffberg, M.; Laird, R.; Lenkzsus, F.; Liu, C.; Rodricks, B.

1997-01-01

This paper describes the development of a high-speed CCD digital camera system. The system has been designed to use CCDs from various manufacturers with minimal modifications. The first camera built on this design utilizes a Thomson 512 x 512 pixel CCD as its sensor, which is read out from two parallel outputs at a speed of 15 MHz/pixel/output. The data undergo correlated double sampling after which it is digitized into 12 bits. The throughput of the system translates into 60 MB/second, which is either stored directly in a PC or transferred to a custom-designed VXI module. The PC data acquisition version of the camera can collect sustained data in real time that is limited to the memory installed in the PC. The VXI version of the camera, also controlled by a PC, stores 512 MB of real-time data before it must be read out to the PC disk storage. The uncooled CCD can be used either with lenses for visible light imaging or with a phosphor screen for X-ray imaging. This camera has been tested with a phosphor screen coupled to a fiber-optic face plate for high-resolution, high-speed X-ray imaging. The camera is controlled through a custom event-driven user-friendly Windows package. The pixel clock speed can be changed from 1 to 15 MHz. The noise was measured to be 1.05 bits at a 13.3 MHz pixel clock. This paper will describe the electronics, software, and characterizations that have been performed using both visible and X-ray photons. (orig.)

Application of the CCD Fabry-Perot Annular Summing Technique to Thermospheric O(1)D.

Science.gov (United States)

Coakley, Monica Marie

1995-01-01

This work will detail the verification of the advantages of the Fabry-Perot charge coupled device (CCD) annular summing technique, the development of the technique for analysis of daysky spectra, and the implications of the resulting spectra for neutral temperature and wind measurements in the daysky thermosphere. The daysky spectral feature of interest is the bright (1 kilo-Rayleigh) thermospheric (OI) emission at 6300 A which had been observed in the nightsky in order to determine winds and temperatures in the vicinity of the altitude of 250 km. In the daysky, the emission line sits on top of a bright Rayleigh scattered continuum background which significantly complicates the observation. With a triple etalon Fabry-Perot spectrometer, the continuum background can be reduced while maintaining high throughput and high resolution. The inclusion of a CCD camera results in significant savings in integration time over the two more standard scanning photomultiplier systems that have made the same wind and temperature measurements in the past. A comparable CCD system can experience an order of magnitude savings in integration time over a PMT system. Laboratory and field tests which address the advantages and limitations of both the Fabry-Perot CCD annular summing technique and the daysky CCD imaging are included in Chap. 2 and Chap. 3. With a sufficiently large throughput associated with the spectrometer and a CCD detector, rapid observations (~4 minute integrations) can be made. Extraction of the line width and line center from the daysky near-continuum background is complicated compared to the nightsky case, but possible. Methods of fitting the line are included in Chap. 4. The daysky O ^1D temperatures are consistent with a lower average emission height than predicted by models. The data and models are discussed in Chap. 5. Although some discrepancies exist between resulting temperatures and models, the observations indicate the potential for other direct measurements

Micromachined high-performance RF passives in CMOS substrate

International Nuclear Information System (INIS)

Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

2016-01-01

This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

CMOS switched current phase-locked loop

NARCIS (Netherlands)

Leenaerts, D.M.W.; Persoon, G.G.; Putter, B.M.

1997-01-01

The authors present an integrated circuit realisation of a switched current phase-locked loop (PLL) in standard 2.4 µm CMOS technology. The centre frequency is tunable to 1 MHz at a clock frequency of 5.46 MHz. The PLL has a measured maximum phase error of 21 degrees. The chip consumes

First result on biased CMOS MAPs-on-diamond devices

Energy Technology Data Exchange (ETDEWEB)

Kanxheri, K., E-mail: keida.kanxheri@pg.infn.it [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Citroni, M.; Fanetti, S. [LENS Firenze, Florence (Italy); Lagomarsino, S. [Università degli Studi di Firenze, Florence (Italy); INFN Firenze, Pisa (Italy); Morozzi, A. [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Parrini, G. [Università degli Studi di Firenze, Florence (Italy); Passeri, D. [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Sciortino, S. [Università degli Studi di Firenze, Florence (Italy); INFN Firenze, Pisa (Italy); Servoli, L. [INFN Perugia, Perugia (Italy)

2015-10-01

Recently a new type of device, the MAPS-on-diamond, obtained bonding a thinned to 25 μm CMOS Monolithic Active Pixel Sensor to a standard 500 μm pCVD diamond substrate, has been proposed and fabricated, allowing a highly segmented readout (10×10 μm pixel size) of the signal produced in the diamond substrate. The bonding between the two materials has been obtained using a new laser technique to deliver the needed energy at the interface. A biasing scheme has been adopted to polarize the diamond substrate to allow the charge transport inside the diamond without disrupting the functionalities of the CMOS Monolithic Active Pixel Sensor. The main concept of this class of devices is the capability of the charges generated in the diamond by ionizing radiation to cross the silicon–diamond interface and to be collected by the MAPS photodiodes. In this work we demonstrate that such passage occurs and measure its overall efficiency. This study has been carried out first calibrating the CMOS MAPS with monochromatic X-rays, and then testing the device with charged particles (electrons) either with and without biasing the diamond substrate, to compare the amount of signal collected.

Flatfielding Errors in Strömvil CCD Photometry

Directory of Open Access Journals (Sweden)

Boyle R. P.

2003-12-01

Full Text Available The importance of determining the error of the flat field in CCD photometry is detailed and our methods of doing this are described. We now have reached a precision of 1-1.5 % in our photometry. Color-magnitude diagrams of the open cluster M67 (ours and Laugalys et al. 2003 are compared.

High-speed imaging using CMOS image sensor with quasi pixel-wise exposure

Science.gov (United States)

Sonoda, T.; Nagahara, H.; Endo, K.; Sugiyama, Y.; Taniguchi, R.

2017-02-01

Several recent studies in compressive video sensing have realized scene capture beyond the fundamental trade-off limit between spatial resolution and temporal resolution using random space-time sampling. However, most of these studies showed results for higher frame rate video that were produced by simulation experiments or using an optically simulated random sampling camera, because there are currently no commercially available image sensors with random exposure or sampling capabilities. We fabricated a prototype complementary metal oxide semiconductor (CMOS) image sensor with quasi pixel-wise exposure timing that can realize nonuniform space-time sampling. The prototype sensor can reset exposures independently by columns and fix these amount of exposure by rows for each 8x8 pixel block. This CMOS sensor is not fully controllable via the pixels, and has line-dependent controls, but it offers flexibility when compared with regular CMOS or charge-coupled device sensors with global or rolling shutters. We propose a method to realize pseudo-random sampling for high-speed video acquisition that uses the flexibility of the CMOS sensor. We reconstruct the high-speed video sequence from the images produced by pseudo-random sampling using an over-complete dictionary.

Geant4-based simulations of charge collection in CMOS Active Pixel Sensors

International Nuclear Information System (INIS)

Esposito, M.; Allinson, N.M.; Price, T.; Anaxagoras, T.

2017-01-01

Geant4 is an object-oriented toolkit for the simulation of the interaction of particles and radiation with matter. It provides a snapshot of the state of a simulated particle in time, as it travels through a specified geometry. One important area of application is the modelling of radiation detector systems. Here, we extend the abilities of such modelling to include charge transport and sharing in pixelated CMOS Active Pixel Sensors (APSs); though similar effects occur in other pixel detectors. The CMOS APSs discussed were developed in the framework of the PRaVDA consortium to assist the design of custom sensors to be used in an energy-range detector for proton Computed Tomography (pCT). The development of ad-hoc classes, providing a charge transport model for a CMOS APS and its integration into the standard Geant4 toolkit, is described. The proposed charge transport model includes, charge generation, diffusion, collection, and sharing across adjacent pixels, as well as the full electronic chain for a CMOS APS. The proposed model is validated against experimental data acquired with protons in an energy range relevant for pCT.

Custom high-reliability radiation-hard CMOS-LSI circuit design

International Nuclear Information System (INIS)

Barnard, W.J.

1981-01-01

Sandia has developed a custom CMOS-LSI design capability to provide high reliability radiation-hardened circuits. This capability relies on (1) proven design practices to enhance reliability, (2) use of well characterized cells and logic modules, (3) computer-aided design tools to reduce design time and errors and to standardize design definition, and (4) close working relationships with the system designer and technology fabrication personnel. Trade-offs are made during the design between circuit complexity/performance and technology/producibility for high reliability and radiation-hardened designs to result. Sandia has developed and is maintaining a radiation-hardened bulk CMOS technology fabrication line for production of prototype and small production volume parts

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

Science.gov (United States)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation

International Nuclear Information System (INIS)

Moreau, Y.; Gasiot, J.; Duzellier, S.

1995-01-01

Upsets caused by incident heavy ion on CMOS static RAM are studied here. Three dimensional device simulations, based on a description of a full epitaxial CMOS inverter, and experimental results are reported for evaluation of single and multiple bit error risk. The particular influences of hit location and incidence angle are examined

Hybrid Josephson-CMOS memory: a solution for the Josephson memory problem

International Nuclear Information System (INIS)

Duzer, Theodore van; Feng Yijun; Meng Xiaofan; Whiteley, Stephen R; Yoshikawa, Nobuyuki

2002-01-01

The history of the development of superconductive memory for Josephson digital systems is presented along with the several current proposals. The main focus is on a proposed combination of the highly developed CMOS memory technology with Josephson peripheral circuits to achieve memories of significant size with subnanosecond access time. Background material is presented on the cryogenic operation of CMOS. Simulations and experiments on components of memory with emphasis on the important input interface amplifier are presented

Effect of CMOS Technology Scaling on Fully-Integrated Power Supply Efficiency

OpenAIRE

Pillonnet , Gaël; Jeanniot , Nicolas

2016-01-01

International audience; Integrating a power supply in the same die as the powered circuits is an appropriate solution for granular, fine and fast power management. To allow same-die co-integration, fully integrated DC-DC converters designed in the latest CMOS technologies have been greatly studied by academics and industrialists in the last decade. However, there is little study concerning the effects of the CMOS scaling on these particular circuits. To show the trends, this paper compares th...

A new method of preventing bulk-Si CMOS devices from latchup

International Nuclear Information System (INIS)

Xu Xianguo; Xu Xi

2004-01-01

A new method, pseudo-latchup path method, has been put forward that is based on latchup effects of bulk-Si CMOS devices. After we study the design of pseudo-latchup path method in detail, a practice and the corresponding simulation result by computer are given in this text. Pseudo-latchup path method can be used to prevent permanent latchup, but it cannot be used to eliminate the dose rate upset of bulk-Si CMOS devices. (authors)

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

International Nuclear Information System (INIS)

Wang, Zujun; Huang, Shaoyan; Liu, Minbo; Xiao, Zhigang; He, Baoping; Yao, Zhibin; Sheng, Jiangkun

2014-01-01

The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 10 8 n/cm 2 s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 10 11 , 5 × 10 11 , and 1 × 10 12 n/cm 2 , respectively. The mean dark signal (K D ), dark signal spike, dark signal non-uniformity (DSNU), noise (V N ), saturation output signal voltage (V S ), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike

High efficiency grating couplers based on shared process with CMOS MOSFETs

International Nuclear Information System (INIS)

Qiu Chao; Sheng Zhen; Wu Ai-Min; Wang Xi; Zou Shi-Chang; Gan Fu-Wan; Li Le; Albert Pang

2013-01-01

Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal—oxide—semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as a gate in the CMOS metal—oxide—semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ∼ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

CMOS Pixel Sensors for High Precision Beam Telescopes and Vertex Detectors

International Nuclear Information System (INIS)

Masi, R. de; Baudot, J.; Fontaine, J.-Ch.

2009-01-01

CMOS sensors of the MIMOSA (standing for Minimum Ionising particle MOS Active pixel sensor) series are developed at IPHC since a decade and have ended up with full scale devices used in beam telescopes and in demonstrators of future vertex detectors. The sensors deliver analogue, unfiltered, signals and are therefore limited to read-out frequencies of ∼ 1 kframe/s. Since a few years, a fast architecture is being developed in collaboration with IRFU, which aims to speed up the read-out by 1-2 orders of magnitude. The first full scale sensor based on this architecture was fabricated recently and is being tested. Made of 660,000 pixels (18 μm pitch) covering an active area of ∼ 2 cm 2 , it delivers zero-suppressed binary signals, which allow running at ∼ 10 kframes/s. It will equip the beam telescope of the E.U. project EUDET and serve as a forerunner of the sensor equipping the 2 layers of the PIXEL detector of the STAR experiment at RHIC. The contribution to the conference will overview the main features and test results of this pioneering sensor. It will next describe its evolution towards read-out frequencies approaching 100 kframes/s, as required for the vertex detectors of the CBM experiment at FAIR and at the ILC. Finally, the issue of radiation tolerance will be addressed, in the context of a newly available CMOS process using a depleted substrate. A prototype sensor was fabricated in a such CMOS process. The talk will summarise beam test results showing, for the first time, that fluences of 10 14 n eq /cm 2 may be tolerable for CMOS sensors. Overall, the talk provides an overview of the status and plans of CMOS pixel sensors at the frontier of their achievements and outreach. (author)

A FORTRAN version implementation of block adjustment of CCD frames and its preliminary application

Science.gov (United States)

Yu, Y.; Tang, Z.-H.; Li, J.-L.; Zhao, M.

2005-09-01

A FORTRAN version implementation of the block adjustment (BA) of overlapping CCD frames is developed and its flowchart is shown. The program is preliminarily applied to obtain the optical positions of four extragalactic radio sources. The results show that because of the increase in the number and sky coverage of reference stars the precision of optical positions with BA is improved compared with the single CCD frame adjustment.

A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

Science.gov (United States)

Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

2013-03-01

Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

Label free sensing of creatinine using a 6 GHz CMOS near-field dielectric immunosensor.

Science.gov (United States)

Guha, S; Warsinke, A; Tientcheu, Ch M; Schmalz, K; Meliani, C; Wenger, Ch

2015-05-07

In this work we present a CMOS high frequency direct immunosensor operating at 6 GHz (C-band) for label free determination of creatinine. The sensor is fabricated in standard 0.13 μm SiGe:C BiCMOS process. The report also demonstrates the ability to immobilize creatinine molecules on a Si3N4 passivation layer of the standard BiCMOS/CMOS process, therefore, evading any further need of cumbersome post processing of the fabricated sensor chip. The sensor is based on capacitive detection of the amount of non-creatinine bound antibodies binding to an immobilized creatinine layer on the passivated sensor. The chip bound antibody amount in turn corresponds indirectly to the creatinine concentration used in the incubation phase. The determination of creatinine in the concentration range of 0.88-880 μM is successfully demonstrated in this work. A sensitivity of 35 MHz/10 fold increase in creatinine concentration (during incubation) at the centre frequency of 6 GHz is gained by the immunosensor. The results are compared with a standard optical measurement technique and the dynamic range and sensitivity is of the order of the established optical indication technique. The C-band immunosensor chip comprising an area of 0.3 mm(2) reduces the sensing area considerably, therefore, requiring a sample volume as low as 2 μl. The small analyte sample volume and label free approach also reduce the experimental costs in addition to the low fabrication costs offered by the batch fabrication technique of CMOS/BiCMOS process.

A Nordic Project Project on High Speed Low Power Design in Sub-micron CMOS Technology for Mobile

DEFF Research Database (Denmark)

Olesen, Ole

1997-01-01

circuit design is based on state-of-the-art CMOS technology (0.5µm and below) including circuits operating at 2GHz. CMOS technology is chosen, since a CMOS implementation is likely to be significantly cheaper than a bipolar or a BiCMOS solution, and it offers the possibility to integrate the predominantly...... of including good off-chip components in the design by use of innovative, inexpensive package technology.To achieve a higher level of integration, the project will use a novel codesign approach to the design strategy. Rather than making specifications based on a purely architectural approach, the work uses...

''Normal'' tissues from humans exposed to radium contain an alteration in the c-mos locus

International Nuclear Information System (INIS)

Huberman, E.; Schlenker, R.A.; Hardwick, J.P.

1989-01-01

The structures of a number of human proto-oncogenes from persons with internal systemic exposure to radium were analyzed by restriction enzyme digestion and southern blotting of their DNA. Two extra c-mos Eco R1 restriction-fragment-length bands of 5.0 kb and 5.5 kb were found in tissue DNA from six of seven individuals. The extra c-mos bands were detected in DNA from many, but not all, of the tissues of the individuals exposed to radium. Our results suggest that the c-mos restriction-fragment-length alterations (RFLA) found in individuals exposed to radium were induced rather than inherited, are epigenetic in origin, and most likely result from changes in the methylation of bases surrounding the single exon of the c-mos proto-oncogene. 7 refs., 3 figs., 2 tabs

BVR Standardization of the CCD Photometric System of Chungbuk National University Observatory

Directory of Open Access Journals (Sweden)

Jang-Hae Jeong

2009-06-01

Full Text Available BVR observations for 52 standard stars were performed using the 1-m reflecter with 2K CCD System of Chungbuk National University Observatory(CBNUO in 2008. We obtained 1,322 CCD images to establish a correlation between our bvr system and the standard Johnson-Cousins BVR system. We derived the tentative equations of transformation between then as follows; V = v-0.0303(B-V+0.0466 B-V = 1.3475(b-v-0.0251 V-R = 1.0641(v-r-0.0125 Using these equations the magnitudes in V, B-V, and V-R for 197 stars were obtained.

An Analytical Model for Spectral Peak Frequency Prediction of Substrate Noise in CMOS Substrates

DEFF Research Database (Denmark)

Shen, Ming; Mikkelsen, Jan H.

2013-01-01

This paper proposes an analytical model describing the generation of switching current noise in CMOS substrates. The model eliminates the need for SPICE simulations in existing methods by conducting a transient analysis on a generic CMOS inverter and approximating the switching current waveform us...

CCD Camera Lens Interface for Real-Time Theodolite Alignment

Science.gov (United States)

Wake, Shane; Scott, V. Stanley, III

2012-01-01

Theodolites are a common instrument in the testing, alignment, and building of various systems ranging from a single optical component to an entire instrument. They provide a precise way to measure horizontal and vertical angles. They can be used to align multiple objects in a desired way at specific angles. They can also be used to reference a specific location or orientation of an object that has moved. Some systems may require a small margin of error in position of components. A theodolite can assist with accurately measuring and/or minimizing that error. The technology is an adapter for a CCD camera with lens to attach to a Leica Wild T3000 Theodolite eyepiece that enables viewing on a connected monitor, and thus can be utilized with multiple theodolites simultaneously. This technology removes a substantial part of human error by relying on the CCD camera and monitors. It also allows image recording of the alignment, and therefore provides a quantitative means to measure such error.

A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors

International Nuclear Information System (INIS)

Han Ye; Li Quanliang; Shi Cong; Wu Nanjian

2013-01-01

This paper presents a high-speed column-parallel cyclic analog-to-digital converter (ADC) for a CMOS image sensor. A correlated double sampling (CDS) circuit is integrated in the ADC, which avoids a stand-alone CDS circuit block. An offset cancellation technique is also introduced, which reduces the column fixed-pattern noise (FPN) effectively. One single channel ADC with an area less than 0.02 mm 2 was implemented in a 0.13 μm CMOS image sensor process. The resolution of the proposed ADC is 10-bit, and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively. The power consumption from 3.3 V supply is only 0.66 mW. An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels. The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors. (semiconductor integrated circuits)

CMOS direct time interval measurement of long-lived luminescence lifetimes.

Science.gov (United States)

Yao, Lei; Yung, Ka Yi; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-01-01

We describe a Complementary Metal-Oxide Semiconductor (CMOS) Direct Time Interval Measurement (DTIM) Integrated Circuit (IC) to detect the decay (fall) time of the luminescence emission when analyte-sensitive luminophores are excited with an optical pulse. The CMOS DTIM IC includes 14 × 14 phototransistor array, transimpedance amplifier, regulated gain amplifier, fall time detector, and time-to-digital convertor. We examined the DTIM system to measure the emission lifetime of oxygen-sensitive luminophores tris(4,7-diphenyl-1, 10-phenanthroline) ruthenium(II) ([Ru(dpp)(3)](2+)) encapsulated in sol-gel derived xerogel thin-films. The DTIM system fabricated using TSMC 0.35 μm process functions to detect lifetimes from 4 μs to 14.4 μs but can be tuned to detect longer lifetimes. The system provides 8-bit digital output proportional to lifetimes and consumes 4.5 mW of power with 3.3 V DC supply. The CMOS system provides a useful platform for the development of reliable, robust, and miniaturized optical chemical sensors.

A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

Science.gov (United States)

Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

2016-07-01

We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

Implementation of large area CMOS image sensor module using the precision align inspection

International Nuclear Information System (INIS)

Kim, Byoung Wook; Kim, Toung Ju; Ryu, Cheol Woo; Lee, Kyung Yong; Kim, Jin Soo; Kim, Myung Soo; Cho, Gyu Seong

2014-01-01

This paper describes a large area CMOS image sensor module Implementation using the precision align inspection program. This work is needed because wafer cutting system does not always have high precision. The program check more than 8 point of sensor edges and align sensors with moving table. The size of a 2×1 butted CMOS image sensor module which except for the size of PCB is 170 mm×170 mm. And the pixel size is 55 μm×55 μm and the number of pixels is 3,072×3,072. The gap between the two CMOS image sensor module was arranged in less than one pixel size

Implementation of large area CMOS image sensor module using the precision align inspection

Energy Technology Data Exchange (ETDEWEB)

Kim, Byoung Wook; Kim, Toung Ju; Ryu, Cheol Woo [Radiation Imaging Technology Center, JBTP, Iksan (Korea, Republic of); Lee, Kyung Yong; Kim, Jin Soo [Nano Sol-Tech INC., Iksan (Korea, Republic of); Kim, Myung Soo; Cho, Gyu Seong [Dept. of Nuclear and Quantum Engineering, KAIST, Daejeon (Korea, Republic of)

2014-12-15

This paper describes a large area CMOS image sensor module Implementation using the precision align inspection program. This work is needed because wafer cutting system does not always have high precision. The program check more than 8 point of sensor edges and align sensors with moving table. The size of a 2×1 butted CMOS image sensor module which except for the size of PCB is 170 mm×170 mm. And the pixel size is 55 μm×55 μm and the number of pixels is 3,072×3,072. The gap between the two CMOS image sensor module was arranged in less than one pixel size.

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

Science.gov (United States)

Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

2014-02-10

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

CMOS technology and current-feedback op-amps

DEFF Research Database (Denmark)

Bruun, Erik

1993-01-01

Some of the problems related to the application of CMOS technology to current-feedback operational amplifiers (CFB op-amps) are identified. Problems caused by the low device transconductance and by the absence of matching between p-channel and n-channel transistors are examined, and circuit...

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

International Nuclear Information System (INIS)

Zhang, L.; Wang, M.; Fu, M.; Zhang, Y.; Yan, W.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm 2 .

Structured Analog CMOS Design

CERN Document Server

Stefanovic, Danica

2008-01-01

Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament

An ultra-low-power CMOS temperature sensor for RFID applications

Energy Technology Data Exchange (ETDEWEB)

Xu Conghui; Gao Peijun; Che Wenyi; Tan Xi; Yan Na; Min Hao, E-mail: yanna@fudan.edu.c [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2009-04-15

An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID applications was implemented in a 0.18-mum CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 muA and 1.8 V for continuous operation and achieves an accuracy of +-0.65 deg. C from -20 to 120 deg. C after calibration at one temperature.

An ultra-low-power CMOS temperature sensor for RFID applications

International Nuclear Information System (INIS)

Xu Conghui; Gao Peijun; Che Wenyi; Tan Xi; Yan Na; Min Hao

2009-01-01

An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID applications was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 μA and 1.8 V for continuous operation and achieves an accuracy of ±0.65 deg. C from -20 to 120 deg. C after calibration at one temperature.

CMOS Voltage-Controlled Oscillator Resilient Design for Wireless Communication Applications

Directory of Open Access Journals (Sweden)

Ekavut Kritchanchai

2015-08-01

Full Text Available Semiconductor process variation and reliability aging effect on CMOS VCO performance has been studied. A technique to mitigate the effect of process variations on the performances of nano-scale CMOS LC-VCO is presented. The LC-VCO compensation uses a process invariant current source. VCO parameters such as phase noise and core power before and after compensation over a wide range of variability are examined. Analytical equations are derived for physical insight. ADS and Monte-Carlo simulation results show that the use of invariant current source improves the robustness of the VCO performance against process variations and device aging.

Pixel front-end development in 65 nm CMOS technology

International Nuclear Information System (INIS)

Havránek, M; Hemperek, T; Kishishita, T; Krüger, H; Wermes, N

2014-01-01

Luminosity upgrade of the LHC (HL-LHC) imposes severe constraints on the detector tracking systems in terms of radiation hardness and capability to cope with higher hit rates. One possible way of keeping track with increasing luminosity is the usage of more advanced technologies. Ultra deep sub-micron CMOS technologies allow a design of complex and high speed electronics with high integration density. In addition, these technologies are inherently radiation hard. We present a prototype of analog pixel front-end integrated circuit designed in 65 nm CMOS technology with applications oriented towards the ATLAS Pixel Detector upgrade. The aspects of ultra deep sub-micron design and performance of the analog pixel front-end circuits will be discussed

A New CMOS Posicast Pre-shaper for Vibration Reduction of CMOS Op-Amps

Science.gov (United States)

Rasoulzadeh, M.; Ghaznavi-Ghoushchi, M. B.

2010-06-01

Posicast-based control is a widely used method in vibration reduction of lightly damped oscillatory systems especially in mechanical fields. The target systems to apply Posicast method are the systems which are excited by pulse inputs. Using the Posicast idea, the input pulse is reshaped into a new pulse, which is called Posicast pulse. Applying the generated Posicast pulse reduces the undesired oscillatory manner of under-test systems. In this paper, a fully CMOS Pulse pre-shaper circuit for realization of Posicast command is proposed. Our design is based on delay-and-add approach for the incoming pulses. The delay is done via a modified Schmitt Trigger-like circuit. The adder circuit is implemented by a simple non-binary analog adder terminated by a passive element. Our proposed design has a reasonable flexibility in configuration of time delay and amplitude of the desired pulse-like shapes. The delay is controlled via the delay unit and the pre-shaped pulse's amplitudes are controlled by an analog adder unit. The overall system has 18 MOS transistors, one small capacitor, and one resistor. To verify the effectiveness of the recommended method, it is experienced on a real CMOS Op-Amp. HSPICE simulation results, on 0.25u technology, show a significant reduction on overshoot and settling time of the under-test Op-Amp. The mentioned reduction is more than 95% in overshoot and more than 60% in settling time of the system.

A 24GHz Radar Receiver in CMOS

NARCIS (Netherlands)

Kwok, K.C.

2015-01-01

This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

Science.gov (United States)

Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent

2012-01-01

This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585

77 FR 42713 - Notice of Proposed Information Collection RequestsNPEFS 2011-2014: Common Core of Data (CCD...

Science.gov (United States)

2012-07-20

... Core of Data (CCD) National Public Education Financial Survey AGENCY: Institute of Education Sciences, Department of Education. SUMMARY: The National Public Education Financial Survey (NPEFS) is an annual... of Data (CCD) National Public Education Financial Survey. OMB Control Number: 1850-0067. [[Page 42714...

A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

Science.gov (United States)

Wallace, Robert M.

2001-03-01

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

Noise in off-axis type holograms including reconstruction and CCD camera parameters

Energy Technology Data Exchange (ETDEWEB)

Voelkl, Edgar, E-mail: edgar.voelkl@fei.com [FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124-5793 (United States)

2010-02-15

Phase and amplitude images as contained in digital holograms are commonly extracted via a process called 'reconstruction'. Expressions for the expected noise in these images have been given in the past by several authors; however, the effect of the actual reconstruction process has not been fully appreciated. By starting with the Quantum Mechanical intensity distribution of the off-axis type interference pattern, then building the digital hologram on an electron-by-electron base while simultaneously reconstructing the phase/amplitude images and evaluating their noise levels, an expression is derived that consistently describes the noise in simulated and experimental phase/amplitude images and contains the reconstruction parameters. Because of the necessity to discretize the intensity distribution function, the digitization effects of an ideal CCD camera had to be included. Subsequently, this allowed a comparison between real and simulated holograms which then led to a comparison between the performance of an 'ideal' CCD camera versus a real device. It was concluded that significant improvement of the phase and amplitude noise may be obtained if CCD cameras were optimized for digitizing intensity distributions at low sampling rates.

Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

NARCIS (Netherlands)

Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

2011-01-01

We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

Commercialisation of CMOS Integrated Circuit Technology in Multi-Electrode Arrays for Neuroscience and Cell-Based Biosensors

Directory of Open Access Journals (Sweden)

Chris R. Bowen

2011-05-01

Full Text Available The adaptation of standard integrated circuit (IC technology as a transducer in cell-based biosensors in drug discovery pharmacology, neural interface systems and electrophysiology requires electrodes that are electrochemically stable, biocompatible and affordable. Unfortunately, the ubiquitous Complementary Metal Oxide Semiconductor (CMOS IC technology does not meet the first of these requirements. For devices intended only for research, modification of CMOS by post-processing using cleanroom facilities has been achieved. However, to enable adoption of CMOS as a basis for commercial biosensors, the economies of scale of CMOS fabrication must be maintained by using only low-cost post-processing techniques. This review highlights the methodologies employed in cell-based biosensor design where CMOS-based integrated circuits (ICs form an integral part of the transducer system. Particular emphasis will be placed on the application of multi-electrode arrays for in vitro neuroscience applications. Identifying suitable IC packaging methods presents further significant challenges when considering specific applications. The various challenges and difficulties are reviewed and some potential solutions are presented.

CMOS COLOUR SENSOR BASED pH MEASUREMENT FOR WATER QUALITY ANALYSIS

OpenAIRE

Sanjay Kumar; Arvind Singh

2016-01-01

A Real-Time pH measurement system using a novel design Programmable CMOS optical Colour light to frequency converter TCS230 is presented. The system uses Bogen’s universal indicator solution combined with a white light source and the Programmable CMOS colour sensor TCS230 to measure pH as a function of colour change in a sample. Bogen’s universal indicator solution causes a colour change in a sample according to the pH of the sample. The output frequency from the colour-sensitive CM...

A New CCD Camera at the Molėtai Observatory

Directory of Open Access Journals (Sweden)

Zdanavičius J.

2003-12-01

Full Text Available The results of the first testing of a new CCD camera of the Molėtai Observatory are given. The linearity and the flat field corrections of good accuracy are determined by using shifted star field exposures.

Recent progress in the development of 3D deep n-well CMOS MAPS

International Nuclear Information System (INIS)

Traversi, G; Manghisoni, M; Re, V; Gaioni, L; Manazza, A; Ratti, L; Zucca, S

2012-01-01

In the deep n-well (DNW) monolithic active pixel sensor (MAPS) a full in-pixel signal processing chain is integrated by exploiting the triple well option of a deep submicron CMOS process. This work is concerned with the design and characterization of DNW MAPS fabricated in a vertical integration (3D) CMOS technology. 3D processes can be very effective in overcoming typical limitations of monolithic active pixel sensors. This paper discusses the main features of a new analog processor for DNW MAPS (ApselVI) in view of applications to the SVT Layer0 of the SuperB Factory. It also presents the first experimental results from the test of a DNW MAPS prototype in the GlobalFoundries 130 nm CMOS technology.

Development of network based control and data acquisition systems for diagnostics using CCD detectors. Application to LHD experiments

International Nuclear Information System (INIS)

Kado, Shinichiro; Nakanishi, Hideya; Ida, Katsumi; Kojima, Mamoru

2000-01-01

The needs of CCD detectors as a plasma diagnostic tool have recently been increased. However, many CCD providers have developed their own controlling systems, and it is difficult to customized the usages in order to make them applicable to the network-based data acquisition clusters which consist of various sorts of diagnostics. This paper presents the development of systems in which CCD detectors are controlled and the data are acquired through networks. By making use of the Client/Server (C/S) model in the Windows NT operating system and block transfer method via shared memory relevant to the model, the dependence on the hardware is hidden by the server service, CCD list sequencer. The client program is designed for the LHD (Large Helical Device) discharge operation sequences and the data acquisition system. (author)

CMOS image sensor-based implantable glucose sensor using glucose-responsive fluorescent hydrogel.

Science.gov (United States)

Tokuda, Takashi; Takahashi, Masayuki; Uejima, Kazuhiro; Masuda, Keita; Kawamura, Toshikazu; Ohta, Yasumi; Motoyama, Mayumi; Noda, Toshihiko; Sasagawa, Kiyotaka; Okitsu, Teru; Takeuchi, Shoji; Ohta, Jun

2014-11-01

A CMOS image sensor-based implantable glucose sensor based on an optical-sensing scheme is proposed and experimentally verified. A glucose-responsive fluorescent hydrogel is used as the mediator in the measurement scheme. The wired implantable glucose sensor was realized by integrating a CMOS image sensor, hydrogel, UV light emitting diodes, and an optical filter on a flexible polyimide substrate. Feasibility of the glucose sensor was verified by both in vitro and in vivo experiments.

New Design Concept for Universal CCD Controller

Directory of Open Access Journals (Sweden)

Wonyong Han

1994-06-01

Full Text Available Currently, the CCDs are widely used in astronomical observations either in direct imaging use or spectroscopic mode. However according to the recent technical advances, new large format CCDs are rapidly developed which have better performances with higher quantum efficiency and sensitivity. In many cases, some microprocessors have been adopted to deal with necessary digital logic for a CCD imaging system. This could often lack the flexibility of a system for a user to upgrade with new devices, especially of it is a commercial product. A new design concept has been explored which could provide the opportunity to deal with any format of devices from ant manufactures effectively for astronomical purposes. Recently available PLD (Programmable Logic Devices technology makes it possible to develop such digital circuit design, which can be integrated into a single component, instead of using microprocessors. The design concept could dramatically increase the efficiency and flexibility of a CCD imaging system, particularly when new or large format devices are available and to upgrade the performance of a system. Some variable system control parameters can be selected by a user with a wider range of choice. The software can support such functional requirements very conveniently. This approach can be applied not only to astronomical purpose, but also to some related fields, such as remote sensing and industrial applications.

Photon imaging using post-processed CMOS chips

NARCIS (Netherlands)

Melai, J.

2010-01-01

This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic

High-temperature complementary metal oxide semiconductors (CMOS)

International Nuclear Information System (INIS)

McBrayer, J.D.

1979-10-01

Silicon CMOS devices were studied, tested, and evaluated at high temperatures to determine processing, geometric, operating characteristics, and stability parameters. After more than 1000 hours at 300 0 C, most devices showed good stability, reliability, and operating characteristics. Processing and geometric parameters were evaluated and optimization steps discussed

A CMOS four-quadrant analog current multiplier

NARCIS (Netherlands)

Wiegerink, Remco J.

1991-01-01

A CMOS four-quadrant analog current multiplier is described. The circuit is based on the square-law characteristic of an MOS transistor and is insensitive to temperature and process variations. The circuit is insensitive to the body effect so it is not necessary to place transistors in individual

Phase shifting white light interferometry using colour CCD for optical metrology and bio-imaging applications

Science.gov (United States)

Upputuri, Paul Kumar; Pramanik, Manojit

2018-02-01

Phase shifting white light interferometry (PSWLI) has been widely used for optical metrology applications because of their precision, reliability, and versatility. White light interferometry using monochrome CCD makes the measurement process slow for metrology applications. WLI integrated with Red-Green-Blue (RGB) CCD camera is finding imaging applications in the fields optical metrology and bio-imaging. Wavelength dependent refractive index profiles of biological samples were computed from colour white light interferograms. In recent years, whole-filed refractive index profiles of red blood cells (RBCs), onion skin, fish cornea, etc. were measured from RGB interferograms. In this paper, we discuss the bio-imaging applications of colour CCD based white light interferometry. The approach makes the measurement faster, easier, cost-effective, and even dynamic by using single fringe analysis methods, for industrial applications.

CMOS sensors for atmospheric imaging

Science.gov (United States)

Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

2017-09-01

Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

Science.gov (United States)

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

International Nuclear Information System (INIS)

Li Chen; Liao Huailin; Huang Ru; Wang Yangyuan

2008-01-01

In this paper, a complementary metal-oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications. (cross-disciplinary physics and related areas of science and technology)

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

Science.gov (United States)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 0.18 mu{m} CMOS Image Sensors

Science.gov (United States)

Martin, E.; Nuns, T.; David, J.-P.; Gilard, O.; Vaillant, J.; Fereyre, P.; Prevost, V.; Boutillier, M.

2014-02-01

The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking.

Science.gov (United States)

Uddin, Ashfaque; Milaninia, Kaveh; Chen, Chin-Hsuan; Theogarajan, Luke

2011-12-01

This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.

Electromagnetic design methods in systems-on-chip: integrated filters for wireless CMOS RFICs

International Nuclear Information System (INIS)

Contopanagos, Harry

2005-01-01

We present general methods for designing on-chip CMOS passives and utilizing these integrated elements to design on-chip CMOS filters for wireless communications. These methods rely on full-wave electromagnetic numerical calculations that capture all the physics of the underlying foundry technologies. This is especially crucial for deep sub-micron CMOS technologies as it is important to capture the physical effects of finite (and mediocre) Q-factors limited by material losses and constraints on expensive die area, low self-resonance frequencies and dual parasitics that are particularly prevalent in deep sub-micron CMOS processes (65 nm-0.18 μm. We use these integrated elements in an ideal synthesis of a Bluetooth/WLAN pass-band filter in single-ended or differential architectures, and show the significant deviations of the on-chip filter response from the ideal one. We identify which elements in the filter circuit need to maximize their Q-factors and which Q-factors do not affect the filter performance. This saves die area, and predicts the FET parameters (especially transconductances) and negative-resistance FET topologies that have to be integrated in the filter to restore its performance. (invited paper)

Electromagnetic design methods in systems-on-chip: integrated filters for wireless CMOS RFICs

Energy Technology Data Exchange (ETDEWEB)

Contopanagos, Harry [Institute for Microelectronics, NCSR ' Demokritos' , PO Box 60228, GR-153 10 Aghia Paraskevi, Athens (Greece)

2005-01-01

We present general methods for designing on-chip CMOS passives and utilizing these integrated elements to design on-chip CMOS filters for wireless communications. These methods rely on full-wave electromagnetic numerical calculations that capture all the physics of the underlying foundry technologies. This is especially crucial for deep sub-micron CMOS technologies as it is important to capture the physical effects of finite (and mediocre) Q-factors limited by material losses and constraints on expensive die area, low self-resonance frequencies and dual parasitics that are particularly prevalent in deep sub-micron CMOS processes (65 nm-0.18 {mu}m. We use these integrated elements in an ideal synthesis of a Bluetooth/WLAN pass-band filter in single-ended or differential architectures, and show the significant deviations of the on-chip filter response from the ideal one. We identify which elements in the filter circuit need to maximize their Q-factors and which Q-factors do not affect the filter performance. This saves die area, and predicts the FET parameters (especially transconductances) and negative-resistance FET topologies that have to be integrated in the filter to restore its performance. (invited paper)

Fully depleted CMOS pixel sensor development and potential applications

Energy Technology Data Exchange (ETDEWEB)

Baudot, J.; Kachel, M. [Universite de Strasbourg, IPHC, 23 rue du Loess 67037 Strasbourg (France); CNRS, UMR7178, 67037 Strasbourg (France)

2015-07-01

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) high resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a

Cooling System for a Frame-Store PN-CCD Detector for Low Background Application

CERN Document Server

Pereira, H; Santos Silva, P; Kuster, M; Lang, P

2012-01-01

The astroparticle physics experiment CERN Axion Solar Telescope (CAST) aims to detect hypothetical axions or axion-like particles produced in the Sun by the Primakoff process. A Large Hadron Collider (LHC) prototype superconducting dipole magnet provides a 9 T transverse magnetic field for the conversion of axions into detectable X-ray photons. These photons are detected with an X-ray telescope and a novel type of frame-store CCD detector built from radio-pure materials, installed in the optics focal plane. A novel type of cooling system has been designed and built based on krypton-filled cryogenic heat pipes, made out of oxygen-free radiopure copper, and a Stirling cryocooler as cold source. The heat pipes provide an efficient thermal coupling between the cryocooler and the CCD which is kept at stable temperatures between 150 and 230 K within an accuracy of 0.1 K. A graded-Z radiation shield, also serving as a gas cold-trap operated at 120 K, is implemented to reduce the surface contamination of the CCD wind...

Development of X-ray CCD camera system with high readout rate using ASIC

International Nuclear Information System (INIS)

Nakajima, Hiroshi; Matsuura, Daisuke; Anabuki, Naohisa; Miyata, Emi; Tsunemi, Hiroshi; Doty, John P.; Ikeda, Hirokazu; Katayama, Haruyoshi

2009-01-01

We report on the development of an X-ray charge-coupled device (CCD) camera system with high readout rate using application-specific integrated circuit (ASIC) and Camera Link standard. The distinctive ΔΣ type analog-to-digital converter is introduced into the chip to achieve effective noise shaping and to obtain a high resolution with relatively simple circuits. The unit test proved moderately low equivalent input noise of 70μV with a high readout pixel rate of 625 kHz, while the entire chip consumes only 100 mW. The Camera Link standard was applied for the connectivity between the camera system and frame grabbers. In the initial test of the whole system, we adopted a P-channel CCD with a thick depletion layer developed for X-ray CCD camera onboard the next Japanese X-ray astronomical satellite. The characteristic X-rays from 109 Cd were successfully read out resulting in the energy resolution of 379(±7)eV (FWHM) at 22.1 keV, that is, ΔE/E=1.7% with a readout rate of 44 kHz.

Robust Dehaze Algorithm for Degraded Image of CMOS Image Sensors

Directory of Open Access Journals (Sweden)

Chen Qu

2017-09-01

Full Text Available The CMOS (Complementary Metal-Oxide-Semiconductor is a new type of solid image sensor device widely used in object tracking, object recognition, intelligent navigation fields, and so on. However, images captured by outdoor CMOS sensor devices are usually affected by suspended atmospheric particles (such as haze, causing a reduction in image contrast, color distortion problems, and so on. In view of this, we propose a novel dehazing approach based on a local consistent Markov random field (MRF framework. The neighboring clique in traditional MRF is extended to the non-neighboring clique, which is defined on local consistent blocks based on two clues, where both the atmospheric light and transmission map satisfy the character of local consistency. In this framework, our model can strengthen the restriction of the whole image while incorporating more sophisticated statistical priors, resulting in more expressive power of modeling, thus, solving inadequate detail recovery effectively and alleviating color distortion. Moreover, the local consistent MRF framework can obtain details while maintaining better results for dehazing, which effectively improves the image quality captured by the CMOS image sensor. Experimental results verified that the method proposed has the combined advantages of detail recovery and color preservation.

Advanced CMOS device technologies for 45 nm node and below

Directory of Open Access Journals (Sweden)

A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

2007-01-01

Full Text Available We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG candidates for scaled CMOS technologies are fully silicided (FUSI gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits with record ring oscillator performance (high-VT are reported (17 ps at VDD=1.1 V and 20 pA/μm Ioff, meeting the ITRS 45 nm node requirement for low-power (LP CMOS. Compatibility of FUSI and other MG with known stress boosters like stressed CESL (contact-etch-stop-layer with high intrinsic stress or embedded SiGe in the pMOS S/D regions is validated. To obtain MuGFET devices that are competitive, as compared to conventional planar bulk devices, and that meet the stringent drive and leakage current requirements for the 32 nm node and beyond, higher channel mobilities are required. Results obtained by several strain engineering methods are presented here.

CMOS digital integrated circuits a first course

CERN Document Server

Hawkins, Charles; Zarkesh-Ha, Payman

2016-01-01

This book teaches the fundamentals of modern CMOS technology and covers equal treatment to both types of MOSFET transistors that make up computer circuits; power properties of logic circuits; physical and electrical properties of metals; introduction of timing circuit electronics and introduction of layout; real-world examples and problem sets.

CCD characterization and measurements automation