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Sample records for ccd cmos psp

  1. A comparison of film and 3 digital imaging systems for natural dental caries detection: CCD, CMOS, PSP and film

    Han, Won Jeong [Dankook University College of Medicine, Seoul (Korea, Republic of)

    2004-03-15

    To evaluate the diagnostic accuracy of occlusal and proximal caries detection using CCD, CMOS, PSP and film system. 32 occlusal and 30 proximal tooth surfaces were radiographed under standardized conditions using 3 digital systems; CCD (CDX-2000HQ, Biomedysis Co., Seoul, Korea), CMOS (Schick, Schick Inc., Long Island, USA), PSP (Digora FMX, Orion Co./Soredex, Helsinki, Finland) and 1 film system (Kodak Insight, Eastman Kodak, Rochester, USA). 5 observers examined the radiographs for occlusal and proximal caries using a 5-point confidence scale. The presence of caries was validated histologically and radiographically. Diagnostic accuracy was evaluated using ROC curve areas (AZ). Analysis using ROC curves revealed the area under each curve which indicated a diagnostic accuracy. For occlusal caries, Kodak Insight film had an Az of 0.765, CCD one of 0.730, CMOS one of 0.742 and PSP one of 0.735. For proximal caries, Kodak Insight film had an Az of 0.833, CCD one of 0.832, CMOS one of 0.828 and PSP one of 0.868. No statistically significant difference was noted between any of the imaging modalities. CCD, CMOS, PSP and film performed equally well in the detection of occlusal and proximal dental caries. CCD, CMOS and PSP-based digital images provided a level of diagnostic performance comparable to Kodak Insight film.

  2. A comparison of film and 3 digital imaging systems for natural dental caries detection: CCD, CMOS, PSP and film

    Han, Won Jeong

    2004-01-01

    To evaluate the diagnostic accuracy of occlusal and proximal caries detection using CCD, CMOS, PSP and film system. 32 occlusal and 30 proximal tooth surfaces were radiographed under standardized conditions using 3 digital systems; CCD (CDX-2000HQ, Biomedysis Co., Seoul, Korea), CMOS (Schick, Schick Inc., Long Island, USA), PSP (Digora FMX, Orion Co./Soredex, Helsinki, Finland) and 1 film system (Kodak Insight, Eastman Kodak, Rochester, USA). 5 observers examined the radiographs for occlusal and proximal caries using a 5-point confidence scale. The presence of caries was validated histologically and radiographically. Diagnostic accuracy was evaluated using ROC curve areas (AZ). Analysis using ROC curves revealed the area under each curve which indicated a diagnostic accuracy. For occlusal caries, Kodak Insight film had an Az of 0.765, CCD one of 0.730, CMOS one of 0.742 and PSP one of 0.735. For proximal caries, Kodak Insight film had an Az of 0.833, CCD one of 0.832, CMOS one of 0.828 and PSP one of 0.868. No statistically significant difference was noted between any of the imaging modalities. CCD, CMOS, PSP and film performed equally well in the detection of occlusal and proximal dental caries. CCD, CMOS and PSP-based digital images provided a level of diagnostic performance comparable to Kodak Insight film.

  3. Comparative Study of Accuracy in E Speed Intra Oral Films, PSP Intra Oral Digital System and Panoramic Digital Systems (PSP&CCD for Identifying the Extent of Alveolar Bone Loss in Patients with Chronic Periodontitis

    J. Moradi Haghgoo

    2014-04-01

    Full Text Available Introduction & Objective: Diagnosis of periodontal osseous lesions is very important in deter-mining prognosis, treatment plan and maintenance in the long term. This diagnosis can be achieved by using radiography. The aim of this study is to compare accuracy of E speed films, bitewing PSP, panoramic PSP and CCD for identifying the extent of destruction of al-veolar bone in chronic periodontitis. Materials & Methods: In this cross-sectional study, 272 interproximal surfaces were evaluated by 4 radiographic techniques after clinical examination by a periodontist and indication of flap surgery. The distance between CEJ and the alveolar crest was measured by Williams probe during the surgery and before osseous recontouring. These measures were considered as gold standard. This distance was measured using all 4 radiography techniques by 2 radi-ologists at standard conditions after calibration. Results: There was no significant difference between the 4 techniques. The mean distances from CEJ to alveolar crest in all techniques had no significant difference with gold standard, the least difference was in digital BW PSP and the greatest difference was in panoramic PSP. The non-measurable surfaces by E speed BW and panoramic PSP were the fewest and the most, respectively. Conclusion: Better relative accuracy with regard to variation range, mean difference of meas-ures based on gold standard and number of shown surfaces was observed in digital and conventional BW compared to digital panoramic images. (Sci J Hamadan Univ Med Sci 2014; 21 (1:41-48

  4. On-Line High Dose-Rate Gamma Ray Irradiation Test of the CCD/CMOS Cameras

    Cho, Jai Wan; Jeong, Kyung Min [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-05-15

    In this paper, test results of gamma ray irradiation to CCD/CMOS cameras are described. From the CAMS (containment atmospheric monitoring system) data of Fukushima Dai-ichi nuclear power plant station, we found out that the gamma ray dose-rate when the hydrogen explosion occurred in nuclear reactors 1{approx}3 is about 160 Gy/h. If assumed that the emergency response robot for the management of severe accident of the nuclear power plant has been sent into the reactor area to grasp the inside situation of reactor building and to take precautionary measures against releasing radioactive materials, the CCD/CMOS cameras, which are loaded with the robot, serve as eye of the emergency response robot. In the case of the Japanese Quince robot system, which was sent to carry out investigating the unit 2 reactor building refueling floor situation, 7 CCD/CMOS cameras are used. 2 CCD cameras of Quince robot are used for the forward and backward monitoring of the surroundings during navigation. And 2 CCD (or CMOS) cameras are used for monitoring the status of front-end and back-end motion mechanics such as flippers and crawlers. A CCD camera with wide field of view optics is used for monitoring the status of the communication (VDSL) cable reel. And another 2 CCD cameras are assigned for reading the indication value of the radiation dosimeter and the instrument. In the preceding assumptions, a major problem which arises when dealing with CCD/CMOS cameras in the severe accident situations of the nuclear power plant is the presence of high dose-rate gamma irradiation fields. In the case of the DBA (design basis accident) situations of the nuclear power plant, in order to use a CCD/CMOS camera as an ad-hoc monitoring unit in the vicinity of high radioactivity structures and components of the nuclear reactor area, a robust survivability of this camera in such intense gamma-radiation fields therefore should be verified. The CCD/CMOS cameras of various types were gamma irradiated at a

  5. Experimental comparison of the high-speed imaging performance of an EM-CCD and sCMOS camera in a dynamic live-cell imaging test case.

    Hope T Beier

    Full Text Available The study of living cells may require advanced imaging techniques to track weak and rapidly changing signals. Fundamental to this need is the recent advancement in camera technology. Two camera types, specifically sCMOS and EM-CCD, promise both high signal-to-noise and high speed (>100 fps, leaving researchers with a critical decision when determining the best technology for their application. In this article, we compare two cameras using a live-cell imaging test case in which small changes in cellular fluorescence must be rapidly detected with high spatial resolution. The EM-CCD maintained an advantage of being able to acquire discernible images with a lower number of photons due to its EM-enhancement. However, if high-resolution images at speeds approaching or exceeding 1000 fps are desired, the flexibility of the full-frame imaging capabilities of sCMOS is superior.

  6. PSP Program close out documentation

    Andringa, K.; Hootman, H.E.; Ferrara, A.S.; Smith, P.K.; Congdon, J.W.; Randolph, H.W.; Young, R.H.; Driggers, F.E.; Topp, S.V.

    1985-12-31

    In December 1982 DOE-SR directed SRL to study the feasibility and impact of a program to lower the U-236 content of the Highly Enriched Uranium (HEU) stockpile used as fuel for the SRP reactors. In response to this request SRL assessed four technologies, Atomic Vapor Laser Isotope Separation (AVLIS), Molecular Laser Isotope Separation (MLIS), Gas Centrifuge, and the Plasma Separation Process (PSP) for this purpose with the assistance of the Engineering Department. In April 1983 cost/benefit analyses for these processes, high spot cost estimates for production facilities, and process uncertainties were submitted to DOE-SR with a recommendation to proceed with the conceptual design and supporting development programs for a facility based on the use of the PSP process. The current program status for the PSP development program at SRL and the design and documentation of a production facility at SRP, referred to as the Fuel Improvement Demonstration Facility (FIDF), is described in this report.

  7. Progressive Supranuclear Palsy (PSP): Frequently Asked Questions

    ... PSP in some cases. Sinemet. This is the brand name for a combination of “levodopa” and “carbidopa.” ... A major goal of CurePSP is to increase awareness of PSP, CBD, MSA and related brain diseases ...

  8. Resection methodology for PSP data processing: Recent ...

    M. Senthilkumar (Newgen Imaging) 1461 1996 Oct 15 13:05:22

    Abstract. PSP data processing, which primarily involves image alignment and image analysis, is a crucial element in obtaining accurate PSP results. There are two broad approaches to image alignment: the algebraic transformation technique, often called image-warping technique, and resection methodology, which uses ...

  9. 75 FR 29324 - Preferred Supplier Program (PSP)

    2010-05-25

    ..., DON will use a 5-star system based upon the 5-color ratings used in CPARS, as follows: CPARS PSP Red 0... contractors with the greatest motivation to achieve PSS? 3. Energy Efficiency is a critical DON requirement...

  10. Conceptual design for PSP mounting bracket

    Ransom, G.; Stein, R. [Martin Marietta Energy Systems, Inc., Piketon, OH (United States)

    1991-12-31

    Protective structural packages (PSP`s or overpacks) used to ship 2 1/2-ton UF{sub 6} product cylinders are bolted to truck trailers. All bolts penetrate two longitudinal rows of wooden planks. Removal and replacement is required at various intervals for maintenance and routine testing. A conceptual design is presented for mounting brackets which would securely attach PSP`s to trailer frames, reduce removal and replacement time, and minimize risk of personnel injury.

  11. Plasma separation process: Disposal of PSP radioactive wastes

    1989-07-01

    Radioactive wastes, in the form of natural uranium contaminated scrap hardware and residual materials from decontamination operations, were generated in the PSP facilities in buildings R1 and 106. Based on evaluation of the characteristics of these wastes and the applicable regulations, the various options for the processing and disposal of PSP radioactive wastes were investigated and recommended procedures were developed. The essential features of waste processing included: (1) the solidification of all liquid wastes prior to shipment; (2) cutting of scrap hardware to fit 55-gallon drums and use of inerting agents (diatomaceous earth) to eliminate pyrophoric hazards; and (3) compaction of soft wastes. All PSP radioactive wastes were shipped to the Hanford Site for disposal. As part of the waste disposal process, a detailed plan was formulated for handling and tracking of PSP radioactive wastes, from the point of generation through shipping. In addition, a waste minimization program was implemented to reduce the waste volume or quantity. Included in this document are discussions of the applicable regulations, the types of PSP wastes, the selection of the preferred waste disposal approach and disposal site, the analysis and classification of PSP wastes, the processing and ultimate disposition of PSP wastes, the handling and tracking of PSP wastes, and the implementation of the PSP waste minimization program. 9 refs., 1 fig., 8 tabs

  12. Advanced CCD camera developments

    Condor, A. [Lawrence Livermore National Lab., CA (United States)

    1994-11-15

    Two charge coupled device (CCD) camera systems are introduced and discussed, describing briefly the hardware involved, and the data obtained in their various applications. The Advanced Development Group Defense Sciences Engineering Division has been actively designing, manufacturing, fielding state-of-the-art CCD camera systems for over a decade. These systems were originally developed for the nuclear test program to record data from underground nuclear tests. Today, new and interesting application for these systems have surfaced and development is continuing in the area of advanced CCD camera systems, with the new CCD camera that will allow experimenters to replace film for x-ray imaging at the JANUS, USP, and NOVA laser facilities.

  13. PspF-binding domain PspA1-144 and the PspA·F complex: New insights into the coiled-coil-dependent regulation of AAA+ proteins.

    Osadnik, Hendrik; Schöpfel, Michael; Heidrich, Eyleen; Mehner, Denise; Lilie, Hauke; Parthier, Christoph; Risselada, H Jelger; Grubmüller, Helmut; Stubbs, Milton T; Brüser, Thomas

    2015-11-01

    Phage shock protein A (PspA) belongs to the highy conserved PspA/IM30 family and is a key component of the stress inducible Psp system in Escherichia coli. One of its central roles is the regulatory interaction with the transcriptional activator of this system, the σ(54) enhancer-binding protein PspF, a member of the AAA+ protein family. The PspA/F regulatory system has been intensively studied and serves as a paradigm for AAA+ enzyme regulation by trans-acting factors. However, the molecular mechanism of how exactly PspA controls the activity of PspF and hence σ(54) -dependent expression of the psp genes is still unclear. To approach this question, we identified the minimal PspF-interacting domain of PspA, solved its structure, determined its affinity to PspF and the dissociation kinetics, identified residues that are potentially important for PspF regulation and analyzed effects of their mutation on PspF in vivo and in vitro. Our data indicate that several characteristics of AAA+ regulation in the PspA·F complex resemble those of the AAA+ unfoldase ClpB, with both proteins being regulated by a structurally highly conserved coiled-coil domain. The convergent evolution of both regulatory domains points to a general mechanism to control AAA+ activity for divergent physiologic tasks via coiled-coil domains. © 2015 John Wiley & Sons Ltd.

  14. CMOS Imaging Sensor Technology for Aerial Mapping Cameras

    Neumann, Klaus; Welzenbach, Martin; Timm, Martin

    2016-06-01

    In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

  15. CMOS circuits manual

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  16. CCD's at TPC

    Zeller, M.E.

    1977-01-01

    The CCD, Charge Coupled Device, is an analog shift register for which application to the readout of particle detectors has recently been realized. These devices can be used to detect optical information directly, providing an automated readout for streamer or other optical chambers, or as a single input shift register, acting in this instance as a delay line for analog information. A description is given of the latter mode of operation and its utility as a readout method for drift chambers. Most of the information contained herein has been obtained from tests performed in connection with PEP TPC project, PEP-4. That detector will employ approximately 10 4 CCD's making it a reasonable testing ground for ISABELLE size detectors

  17. Transmission electron microscope CCD camera

    Downing, Kenneth H.

    1999-01-01

    In order to improve the performance of a CCD camera on a high voltage electron microscope, an electron decelerator is inserted between the microscope column and the CCD. This arrangement optimizes the interaction of the electron beam with the scintillator of the CCD camera while retaining optimization of the microscope optics and of the interaction of the beam with the specimen. Changing the electron beam energy between the specimen and camera allows both to be optimized.

  18. Large Format CMOS-based Detectors for Diffraction Studies

    Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

    2013-03-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  19. Large Format CMOS-based Detectors for Diffraction Studies

    Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

    2013-01-01

    Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

  20. STIS-01 CCD Functional

    Valenti, Jeff

    2001-07-01

    This activity measures the baseline performance and commandability of the CCD subsystem. Only primary amplifier D is used. Bias, Dark, and Flat Field exposures are taken in order to measure read noise, dark current, CTE, and gain. Numerous bias frames are taken to permit construction of "superbias" frames in which the effects of read noise have been rendered negligible. Dark exposures are made outside the SAA. Full frame and binned observations are made, with binning factors of 1x1 and 2x2. Finally, tungsten lamp exposures are taken through narrow slits to confirm the slit positions in the current database. All exposures are internals. This is a reincarnation of SM3A proposal 8502 with some unnecessary tests removed from the program.

  1. Single photon detection and localization accuracy with an ebCMOS camera

    Cajgfinger, T. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Dominjon, A., E-mail: agnes.dominjon@nao.ac.jp [Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France); Barbier, R. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France)

    2015-07-01

    The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 µm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

  2. Paralytic Shellfish Poisoning (PSP in Margarita Island, Venezuela

    Amelia La Barbera-Sánchez

    2004-09-01

    Full Text Available A severe outbreak of Paralytic Shellfish Poisoning (PSP occurred in Manzanillo and Guayacán, northwestern coast of Margarita Island, Venezuela, between August and October 1991. A bloom of dinoflagellates including Prorocentrum gracile, Gymnodinium catenatum and Alexandrium tamarense seemed to be responsible for this outbreak. Levels of PSP toxins in mussels (Perna perna exceeded the international safety limit of saxitoxin, 80 µg STX/100 g meat. PSP toxin values varied between 2 548 and 115 µg STX/100 g meat in Manzanillo, and between 1 422 and 86 µg STX/100 g meat in Guayacán. At both locations, the highest levels were detected in August, when 24 patients exhibited typical symptoms of PSP toxicity after consuming cooked mussels (16 required hospitalization. A high pressure liquid chromatographic (HPLC procedure was recently used on the 1991 samples. The major toxin detected in samples of both locations was decarbamoyl saxitoxin (dcSTX, but low concentrations of saxitoxin were also found in Manzanillo samples. Gonyautoxins GTX1, GTX2 and GTX3 were detected only at Guayacán, while in both locations, decarbamoylgonyatouxin (dcGTX2,3 toxins were detected. These findings represent the first time that causative toxins of PSP in Venezuela have been chemically identified, and confirm the presence of dcSTX and dcGTX in mussels from the Caribbean Sea. The presence of dcSTX and dcGTX in shellfish is indicative that Gymnodinium catenatum was a causative organism for outbreak of PSPUn severo brote de intoxicación paralizante por moluscos (PSP en inglés ocurrió en Manzanillo y Guayacán en la costa noroeste de la Isla de Margarita, Venezuela entre agosto y octubre de 1991. Una proliferación de Prorocentrum gracile, Gymnodinium catenatum y Alexandrium tamarense causó el brote. Los niveles de PSP en mejillón (Perna perna superaron los niveles máximos permisibles de saxitoxina, 80 µg STX/100g carne. Los niveles de toxinas variaron entre 2 548 y 115

  3. Radiation resistance of paralytic shellfish poison (PSP) toxins

    San Juan, Edith M

    2000-04-01

    Radiation resistance of paralytic shellfish poison (PSP) toxins, obtained from Pyrodinium bahamense var. compressum in shellstocks of green mussels, was determined by subjecting the semi-purified toxin extract as well as the shellstocks of green mussels to high doses of ionizing radiation of 5, 10, 15 and 20 kGy. The concentration of the PSP toxins was determined by the Standard Mouse Bioassay (SMB) method. The radiation assistance of the toxins was determined by plotting the PSP toxin concentration versus applied dose in a semilog paper. The D{sub 10} value or decimal reduction dose was obtained from the straight line which is the dose required to reduce the toxicity level by 90%. The effects of irradiation on the quality of green mussels in terms of its physico-chemical, microbiological and sensory attributes were also conducted. The effect of irradiation on the fatty acid components of green mussels was determined by gas chromatography. Radiation resistance of the PSP toxins was determined to be lower in samples with initially high toxicity level as compared with samples with initially low toxicity level. The D{sub 10} values of samples with initially high PSP level were 28.5 kGy in shellstocks of green musssels and 17.5 kGy in the semi-purified toxin extract. When the PSP level was low initially, the D{sub 10} values were as high as 57.5 and 43.5 kGy in shellstocks of green mussels for the two trials, and 43.0 kGy in semi-purified toxin extract. The microbial load of the irradiated mussels was remarkably reduced. No differnce in color and odor characteristics were observed in the mussel samples subjected to varying doses of ionizing radiation. There was darkening in the color of mussel meat and its juice. The concentration of the fatty acid components in the fresh green mussels were considerably higher as compared with those present in the irradiated mussels, though some volatile fatty acids were detected as a result of irradiation. (Author)

  4. Radiation resistance of paralytic shellfish poison (PSP) toxins

    San Juan, Edith M.

    2000-04-01

    Radiation resistance of paralytic shellfish poison (PSP) toxins, obtained from Pyrodinium bahamense var. compressum in shellstocks of green mussels, was determined by subjecting the semi-purified toxin extract as well as the shellstocks of green mussels to high doses of ionizing radiation of 5, 10, 15 and 20 kGy. The concentration of the PSP toxins was determined by the Standard Mouse Bioassay (SMB) method. The radiation assistance of the toxins was determined by plotting the PSP toxin concentration versus applied dose in a semilog paper. The D 10 value or decimal reduction dose was obtained from the straight line which is the dose required to reduce the toxicity level by 90%. The effects of irradiation on the quality of green mussels in terms of its physico-chemical, microbiological and sensory attributes were also conducted. The effect of irradiation on the fatty acid components of green mussels was determined by gas chromatography. Radiation resistance of the PSP toxins was determined to be lower in samples with initially high toxicity level as compared with samples with initially low toxicity level. The D 10 values of samples with initially high PSP level were 28.5 kGy in shellstocks of green musssels and 17.5 kGy in the semi-purified toxin extract. When the PSP level was low initially, the D 10 values were as high as 57.5 and 43.5 kGy in shellstocks of green mussels for the two trials, and 43.0 kGy in semi-purified toxin extract. The microbial load of the irradiated mussels was remarkably reduced. No differnce in color and odor characteristics were observed in the mussel samples subjected to varying doses of ionizing radiation. There was darkening in the color of mussel meat and its juice. The concentration of the fatty acid components in the fresh green mussels were considerably higher as compared with those present in the irradiated mussels, though some volatile fatty acids were detected as a result of irradiation. (Author)

  5. Enhanced performance CCD output amplifier

    Dunham, Mark E.; Morley, David W.

    1996-01-01

    A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

  6. CCD and IR array controllers

    Leach, Robert W.; Low, Frank J.

    2000-08-01

    A family of controllers has bene developed that is powerful and flexible enough to operate a wide range of CCD and IR focal plane arrays in a variety of ground-based applications. These include fast readout of small CCD and IR arrays for adaptive optics applications, slow readout of large CCD and IR mosaics, and single CCD and IR array operation at low background/low noise regimes as well as high background/high speed regimes. The CCD and IR controllers have a common digital core based on user- programmable digital signal processors that are used to generate the array clocking and signal processing signals customized for each application. A fiber optic link passes image data and commands to VME or PCI interface boards resident in a host computer to the controller. CCD signal processing is done with a dual slope integrator operating at speeds of up to one Megapixel per second per channel. Signal processing of IR arrays is done either with a dual channel video processor or a four channel video processor that has built-in image memory and a coadder to 32-bit precision for operating high background arrays. Recent developments underway include the implementation of a fast fiber optic data link operating at a speed of 12.5 Megapixels per second for fast image transfer from the controller to the host computer, and supporting image acquisition software and device drivers for the PCI interface board for the Sun Solaris, Linux and Windows 2000 operating systems.

  7. A programmable CCD driver circuit for multiphase CCD operation

    Ewin, A.J.; Reed, K.V.

    1989-01-01

    A programmable CCD driver circuit was designed to drive CCD's in multiphased modes. The purpose of the drive electronics was to operate developmental CCD imaging arrays for NASA's Moderate Resolution Imaging Spectrometer - Tiltable (MODIS-T). Five prototype arrays were designed. Valid's Graphics Editor (GED) was used to design the driver. With this driver design, any of the five arrays can be readout. Designing the driver with GED allowed functional simulation, timing verification, and certain packaging analyses to be done on the design before fabrication. The driver verified its function with the master clock running up to 10 MHz. This suggests a maximum rate of 400 Kpixels/sec. Timing and packaging parameters were verified. the design uses 54 TTL component chips

  8. Research-grade CMOS image sensors for demanding space applications

    Saint-Pé, Olivier; Tulet, Michel; Davancens, Robert; Larnaudie, Franck; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Belliot, Pierre

    2017-11-01

    Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle...) and Universe observation (space telescope focal planes, guiding sensors...). This market has been dominated by CCD technology for long. Since the mid- 90s, CMOS Image Sensors (CIS) have been competing with CCDs for more and more consumer domains (webcams, cell phones, digital cameras...). Featuring significant advantages over CCD sensors for space applications (lower power consumption, smaller system size, better radiations behaviour...), CMOS technology is also expanding in this field, justifying specific R&D and development programs funded by national and European space agencies (mainly CNES, DGA, and ESA). All along the 90s and thanks to their increasingly improving performances, CIS have started to be successfully used for more and more demanding applications, from vision and control functions requiring low-level performances to guidance applications requiring medium-level performances. Recent technology improvements have made possible the manufacturing of research-grade CIS that are able to compete with CCDs in the high-performances arena. After an introduction outlining the growing interest of optical instruments designers for CMOS image sensors, this talk will present the existing and foreseen ways to reach high-level electro-optics performances for CIS. The developments of CIS prototypes built using an imaging CMOS process and of devices based on improved designs will be presented.

  9. Comparison of a CCD and an APS for soft x-ray diffraction

    Stewart, G.; Bates, R.; Blue, A.; Clark, A.; Dhesi, S.S.; Maneuski, D.; Marchal, J.; Steadman, P.; Tartoni, N.; Turchetta, R.

    2011-01-01

    We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost.\\ud \\ud The AP...

  10. CCD characterization and measurements automation

    Kotov, I.V.; Frank, J.; Kotov, A.I.; Kubánek, Petr; O´Connor, P.; Prouza, Michael; Radeka, V.; Takacs, P.

    2012-01-01

    Roč. 695, Dec (2012), 188-192 ISSN 0168-9002 R&D Projects: GA MŠk ME09052 Institutional research plan: CEZ:AV0Z10100502 Keywords : CCD * characterization * test automation Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics Impact factor: 1.142, year: 2012

  11. Beyond CMOS nanodevices 2

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

  12. Beyond CMOS nanodevices 1

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

  13. Image differencing using masked CCD

    Rushbrooke, J.G.; Ansorge, R.E.; Webber, C.J. St. J.

    1987-01-01

    A charge coupled device has some of its ''pixels'' masked by a material which is opaque to the radiation to which the device is to be exposed, each masked region being employed as a storage zone into which the charge pattern from the unmasked pixels can be transferred to enable a subsequent charge pattern to be established on further exposure of the unmasked pixels. The components of the resulting video signal corresponding to the respective charge patterns read-out from the CCD are subtracted to produce a video signal corresponding to the difference between the two images which formed the respective charge patterns. Alternate rows of pixels may be masked, or chequer-board pattern masking may be employed. In an X-ray imaging system the CCD is coupled to image intensifying and converting means. (author)

  14. CMOS dot matrix microdisplay

    Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

    2011-03-01

    Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

  15. Sustaining private sector participation (PSP) in solid waste management in Lagos, Nigeria, a developing country

    Adebola, G. [Richbol Environmental Services Ltd., Lagos (Nigeria)

    2000-07-01

    Solid waste management in Lagos, Nigeria includes refuse collection and transportation to a landfill site. Disposal of the refuse and maintenance of the landfill site is also included in this task which, in the past was always a responsibility of the Government Agencies at the local level as a social service. This service has recently been privatised in the name of Private Sector Participation (PSP) in domestic refuse collection and disposal. As a new operator in about 23 wards in the ongoing PSP of domestic refuse, Richbol Environmental Ltd., recognized the enormous effort that government will have to make to sustain PSP in solid waste management. Governments can maintain control through re-orientation, legislation, enforcement, strengthening the PSP operators, integrating existing operators, and monitoring the activities of PSP operators. This paper presented a brief overview of the institutional changes that solid waste management has undergone in Lagos since 1977. It was emphasized that integrated waste management is extremely capital intensive. An integrated PSP can be a long term solution to waste management in developing, cash poor countries. The economic importance of PSP lies in the fact that it will reduce government expenditure and will also create a healthier environment and provide employment opportunities for thousands of employees and contribute to the gross domestic product of the country. 5 refs., 3 tabs., 1 fig.

  16. The OCA CCD Camera Controller

    1996-01-01

    multi CCD arrays for wide field telescopes with an array of 8x8 1K CCDs in use at Las Campanas Observatory in Chile . The same group is also involved...Verify key EPROM -292H VIH . VIH Program security bitl 1 29AH . VPP Program security’ bit 2 *. .298H -Vpp Verify security bits - 9HVIH ViI NOTE: 1...Pulsed from V.. to VIL and returned to VIH . EPROM PROGRAMMING AND VERIFICATION ..t= 21’C to-+27 ’rC:-VCC= 5V ±10%VS3 = OV. SYMBOL I .-- PARAMETER MIN MAX

  17. Intensified CCD for ultrafast diagnostics

    Cheng, J.; Tripp, G.; Coleman, L.

    1978-01-01

    Many of the present laser fusion diagnostics are recorded on either ultrafast streak cameras or on oscilloscopes. For those experiments in which a large volume of data is accumulated, direct computer processing of the information becomes important. We describe an approach which uses a RCA 52501 back-thinned CCD sensor to obtain direct electron readouts for both the streak camera and the CRT. Performance of the 100 GHz streak camera and the 4 GHz CRT are presented. Design parameters and computer interfacing for both systems are described in detail

  18. Wideband CMOS receivers

    Oliveira, Luis

    2015-01-01

    This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

  19. CMOS/SOS processing

    Ramondetta, P.

    1980-01-01

    Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

  20. CCD research. [design, fabrication, and applications

    Gassaway, J. D.

    1976-01-01

    The fundamental problems encountered in designing, fabricating, and applying CCD's are reviewed. Investigations are described and results and conclusions are given for the following: (1) the development of design analyses employing computer aided techniques and their application to the design of a grapped structure; (2) the role of CCD's in applications to electronic functions, in particular, signal processing; (3) extending the CCD to silicon films on sapphire (SOS); and (4) all aluminum transfer structure with low noise input-output circuits. Related work on CCD imaging devices is summarized.

  1. Membrane Stored Curvature Elastic Stress Modulates Recruitment of Maintenance Proteins PspA and Vipp1.

    McDonald, Christopher; Jovanovic, Goran; Ces, Oscar; Buck, Martin

    2015-09-01

    Phage shock protein A (PspA), which is responsible for maintaining inner membrane integrity under stress in enterobacteria, and vesicle-inducting protein in plastids 1 (Vipp1), which functions for membrane maintenance and thylakoid biogenesis in cyanobacteria and plants, are similar peripheral membrane-binding proteins. Their homologous N-terminal amphipathic helices are required for membrane binding; however, the membrane features recognized and required for expressing their functionalities have remained largely uncharacterized. Rigorously controlled, in vitro methodologies with lipid vesicles and purified proteins were used in this study and provided the first biochemical and biophysical characterizations of membrane binding by PspA and Vipp1. Both proteins are found to sense stored curvature elastic (SCE) stress and anionic lipids within the membrane. PspA has an enhanced sensitivity for SCE stress and a higher affinity for the membrane than Vipp1. These variations in binding may be crucial for some of the proteins' differing roles in vivo. Assays probing the transcriptional regulatory function of PspA in the presence of vesicles showed that a relief of transcription inhibition occurs in an SCE stress-specific manner. This in vitro recapitulation of membrane stress-dependent transcription control suggests that the Psp response may be mounted in vivo when a cell's inner membrane experiences increased SCE stress. All cell types maintain the integrity of their membrane systems. One widely distributed membrane stress response system in bacteria is the phage shock protein (Psp) system. The central component, peripheral membrane protein PspA, which mitigates inner membrane stress in bacteria, has a counterpart, Vipp1, which functions for membrane maintenance and thylakoid biogenesis in plants and photosynthetic bacteria. Membrane association of both these proteins is accepted as playing a pivotal role in their functions. Here we show that direct membrane binding by

  2. CCD photometry of NGC 2419

    Christian, C.A.; Heasley, J.N.

    1988-01-01

    The properties of the globular cluster NGC 2419 are reexamined using CCD photometry deepened to the vicinity of the main-sequence turnoff. A new color-magnitude diagram is derived that extends to V = 24.5 mag. It is concluded that NGC 2419 is an outer-halo analog of the metal-poor globulars closer to the Galactic center. NGC 2419 is probably nearly the same age as M15 and differs only slightly, if at all, in metallicity. NGC 2419 has many similarities with the clusters NGC 5466, M15, and M92. Comparison of the data with the isochrones of VandenBerg and Bell (1985) implies a distance modulus of 20.1 with Delta (B-V) = 0.18 mag. Oxygen-rich models can be fit to the data; such a comparison yields a lower limit to the acceptable distance modulus of the cluster. 26 references

  3. CCD characterization and measurements automation

    Kotov, I.V.; Frank, J.; Kotov, A.I.; Kubanek, P.; O'Connor, P.; Prouza, M.; Radeka, V.; Takacs, P.

    2012-01-01

    Modern mosaic cameras have grown both in size and in number of sensors. The required volume of sensor testing and characterization has grown accordingly. For camera projects as large as the LSST, test automation becomes a necessity. A CCD testing and characterization laboratory was built and is in operation for the LSST project. Characterization of LSST study contract sensors has been performed. The characterization process and its automation are discussed, and results are presented. Our system automatically acquires images, populates a database with metadata information, and runs express analysis. This approach is illustrated on 55 Fe data analysis. 55 Fe data are used to measure gain, charge transfer efficiency and charge diffusion. Examples of express analysis results are presented and discussed.

  4. Detection of pregnancy by radioimmunoassay of a pregnancy serum protein (PSP60) in cattle

    Mialon, M.M.; Renand, G.; Camous, S.; Martal, J.; Menissier, F.

    1994-01-01

    The accuracy and efficiency of pregnancy diagnoses in cattle by pregnancy serum protein (PSP60) radioimmunoassay, a progesterone radioimmunoassay or oestrus detection were compared. Blood samples were taken from 349 suckling heifers and cows ( 1 191 inseminations) at 28, 35, 50 and 90 d post-insemination for PSP60 determination and at 22-23 d for progesterone. Females were declared nonpregnant when plasma PSP60 concentration was lower than 0.2 ng/ml at 28, 35 and 50 d and 0.5 ng/ml at 90 d. When compared with rectal palpation at 90 d, the accuracy of positive (negative) diagnoses by progesterone assay was 80% (100%) in heifers and 75% (99%) in cows. The accuracy of positive diagnoses by PSP60 assay increased with gestation stage from 90% on d 28 in heifers (74% in cows) to 100% (99% in cows) at the time of rectal palpation. This accuracy was 84% on d 28 in cows when the interval from calving to blood sampling was higher than 115 d. Whatever the stage, the accuracy of negative diagnoses was higher than 90%. Efficiency in detecting pregnant or nonpregnant females on d 28 was equivalent to the progesterone assay. The method for detecting oestrus applied in this experiment was as efficient as the PSP60 or progesterone test at any stage of gestation. The PSP60 test is very flexible, which makes its use particularly interesting in naturally mated suckling herds because of the uncertainty regarding the date of fertilization. (authors)

  5. Removal of the phage-shock protein PspB causes reduction of virulence in Salmonella enterica serovar Typhimurium independently of NRAMP1

    Wallrodt, Inke; Jelsbak, Lotte; Thomsen, Line E.

    2014-01-01

    The phage-shock protein (Psp) system is believed to manage membrane stress in all Enterobacteriaceae and has recently emerged as being important for virulence in several pathogenic species of this phylum. The core of the Psp system consists of the pspA-D operon and the distantly located pspG gene......IV-induced secretin stress. In conclusion, our results demonstrate that removal of PspB reduces virulence in S. Typhimurium independently of host NRAMP1 expression, demonstrating that PspB has roles in intra-host survival distinct from the reported contributions of PspA....

  6. High-resolution CCD imaging alternatives

    Brown, D. L.; Acker, D. E.

    1992-08-01

    High resolution CCD color cameras have recently stimulated the interest of a large number of potential end-users for a wide range of practical applications. Real-time High Definition Television (HDTV) systems are now being used or considered for use in applications ranging from entertainment program origination through digital image storage to medical and scientific research. HDTV generation of electronic images offers significant cost and time-saving advantages over the use of film in such applications. Further in still image systems electronic image capture is faster and more efficient than conventional image scanners. The CCD still camera can capture 3-dimensional objects into the computing environment directly without having to shoot a picture on film develop it and then scan the image into a computer. 2. EXTENDING CCD TECHNOLOGY BEYOND BROADCAST Most standard production CCD sensor chips are made for broadcast-compatible systems. One popular CCD and the basis for this discussion offers arrays of roughly 750 x 580 picture elements (pixels) or a total array of approximately 435 pixels (see Fig. 1). FOR. A has developed a technique to increase the number of available pixels for a given image compared to that produced by the standard CCD itself. Using an inter-lined CCD with an overall spatial structure several times larger than the photo-sensitive sensor areas each of the CCD sensors is shifted in two dimensions in order to fill in spatial gaps between adjacent sensors.

  7. Improved Space Object Orbit Determination Using CMOS Detectors

    Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

    2014-09-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario

  8. Streptococcus pneumoniae PspC Subgroup Prevalence in Invasive Disease and Differences in Contribution to Complement Evasion.

    van der Maten, Erika; van den Broek, Bryan; de Jonge, Marien I; Rensen, Kim J W; Eleveld, Marc J; Zomer, Aldert L; Cremers, Amelieke J H; Ferwerda, Gerben; de Groot, Ronald; Langereis, Jeroen D; van der Flier, Michiel

    2018-04-01

    The pneumococcal capsular serotype is an important determinant of complement resistance and invasive disease potential, but other virulence factors have also been found to contribute. Pneumococcal surface protein C (PspC), a highly variable virulence protein that binds complement factor H to evade C3 opsonization, is divided into two subgroups: choline-bound subgroup I and LPxTG-anchored subgroup II. The prevalence of different PspC subgroups in invasive pneumococcal disease (IPD) and functional differences in complement evasion are unknown. The prevalence of PspC subgroups in IPD isolates was determined in a collection of 349 sequenced strains of Streptococcus pneumoniae isolated from adult patients. pspC deletion mutants and isogenic pspC switch mutants were constructed to study differences in factor H binding and complement evasion in relation to capsule thickness. Subgroup I pspC was far more prevalent in IPD isolates than subgroup II pspC The presence of capsule was associated with a greater ability of bound factor H to reduce complement opsonization. Pneumococcal subgroup I PspC bound significantly more factor H and showed more effective complement evasion than subgroup II PspC in isogenic encapsulated pneumococci. We conclude that variation in the PspC subgroups, independent of capsule serotypes, affects pneumococcal factor H binding and its ability to evade complement deposition. Copyright © 2018 American Society for Microbiology.

  9. Radiation damage of the PCO Pixelfly VGA CCD camera of the BES system on KSTAR tokamak

    Náfrádi, Gábor, E-mail: nafradi@reak.bme.hu [NTI, BME, EURATOM Association, H-1111 Budapest (Hungary); Kovácsik, Ákos, E-mail: kovacsik.akos@reak.bme.hu [NTI, BME, EURATOM Association, H-1111 Budapest (Hungary); Pór, Gábor, E-mail: por@reak.bme.hu [NTI, BME, EURATOM Association, H-1111 Budapest (Hungary); Lampert, Máté, E-mail: lampert.mate@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary); Un Nam, Yong, E-mail: yunam@nfri.re.kr [NFRI, 169-148 Gwahak-Ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Zoletnik, Sándor, E-mail: zoletnik.sandor@wigner.mta.hu [Wigner RCP, RMI, EURATOM Association, POB 49, 1525 Budapest (Hungary)

    2015-01-11

    A PCO Pixelfly VGA CCD camera which is part a of the Beam Emission Spectroscopy (BES) diagnostic system of the Korea Superconducting Tokamak Advanced Research (KSTAR) used for spatial calibrations, suffered from serious radiation damage, white pixel defects have been generated in it. The main goal of this work was to identify the origin of the radiation damage and to give solutions to avoid it. Monte Carlo N-Particle eXtended (MCNPX) model was built using Monte Carlo Modeling Interface Program (MCAM) and calculations were carried out to predict the neutron and gamma-ray fields in the camera position. Besides the MCNPX calculations pure gamma-ray irradiations of the CCD camera were carried out in the Training Reactor of BME. Before, during and after the irradiations numerous frames were taken with the camera with 5 s long exposure times. The evaluation of these frames showed that with the applied high gamma-ray dose (1.7 Gy) and dose rate levels (up to 2 Gy/h) the number of the white pixels did not increase. We have found that the origin of the white pixel generation was the neutron-induced thermal hopping of the electrons which means that in the future only neutron shielding is necessary around the CCD camera. Another solution could be to replace the CCD camera with a more radiation tolerant one for example with a suitable CMOS camera or apply both solutions simultaneously.

  10. CMOS analog circuit design

    Allen, Phillip E

    1987-01-01

    This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

  11. Photon detection with CMOS sensors for fast imaging

    Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

    2009-01-01

    Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

  12. The Disturbance of Gaze in Progressive Supranuclear Palsy (PSP: Implications for Pathogenesis

    Athena L Chen

    2010-12-01

    Full Text Available Progressive supranuclear palsy (PSP is a disease of later life that is currently regarded as a form of neurodegenerative tauopathy. Disturbance of gaze is a cardinal clinical feature of PSP that often helps clinicians to establish the diagnosis. Since the neurobiology of gaze control is now well understood, it is possible to use eye movements as investigational tools to understand aspects of the pathogenesis of PSP. In this review, we summarize each disorder of gaze control that occurs in PSP, drawing on our studies of fifty patients, and on reports from other laboratories that have measured the disturbances of eye movements. When these gaze disorders are approached by considering each functional class of eye movements and its neurobiological basis, a distinct pattern of eye movement deficits emerges that provides insight into the pathogenesis of PSP. Although some aspects of all forms of eye movements are affected in PSP, the predominant defects concern vertical saccades (slow and hypometric, both up and down, impaired vergence, and inability to modulate the linear vestibulo-ocular reflex appropriately for viewing distance. These vertical and vergence eye movements habitually work in concert to enable visuomotor skills that are important during locomotion with the hands free. Taken with the prominent early feature of falls, these findings suggest that PSP tauopathy impairs a recently-evolved neural system concerned with bipedal locomotion in an erect posture and frequent gaze shifts between the distant environment and proximate hands. This approach provides a conceptual framework that can be used to address the nosological challenge posed by overlapping clinical and neuropathological features of neurodegenerative tauopathies.

  13. CCD-based vertex detectors

    Damerell, C J S

    2005-01-01

    Over the past 20 years, CCD-based vertex detectors have been used to construct some of the most precise 'tracking microscopes' in particle physics. They were initially used by the ACCMOR collaboration for fixed target experiments in CERN, where they enabled the lifetimes of some of the shortest-lived charm particles to be measured precisely. The migration to collider experiments was accomplished in the SLD experiment, where the original 120 Mpixel detector was later upgraded to one with 307 Mpixels. This detector was used in a range of physics studies which exceeded the capability of the LEP detectors, including the most precise limit to date on the Bs mixing parameter. This success, and the high background hit densities that will inevitably be encountered at the future TeV-scale linear collider, have established the need for a silicon pixel-based vertex detector at this machine. The technical options have now been broadened to include a wide range of possible silicon imaging technologies as well as CCDs (mon...

  14. Removal of the phage-shock protein PspB causes reduction of virulence in Salmonella enterica serovar Typhimurium independently of NRAMP1.

    Wallrodt, Inke; Jelsbak, Lotte; Thomsen, Line E; Brix, Lena; Lemire, Sébastien; Gautier, Laurent; Nielsen, Dennis S; Jovanovic, Goran; Buck, Martin; Olsen, John E

    2014-06-01

    The phage-shock protein (Psp) system is believed to manage membrane stress in all Enterobacteriaceae and has recently emerged as being important for virulence in several pathogenic species of this phylum. The core of the Psp system consists of the pspA-D operon and the distantly located pspG gene. In Salmonella enterica serovar Typhimurium (S. Typhimurium), it has recently been reported that PspA is essential for systemic infection of mice, but only in NRAMP1(+) mice, signifying that attenuation is related to coping with divalent cation starvation in the intracellular environment. In the present study, we investigated the contribution of individual psp genes to virulence of S. Typhimurium. Interestingly, deletion of the whole pspA-D set of genes caused attenuation in both NRAMP1(+) and NRAMP1(-) mice, indicating that one or more of the psp genes contribute to virulence independently of NRAMP1 expression in the host. Investigations of single gene mutants showed that knock out of pspB reduced virulence in both types of mice, while deletion of pspA only caused attenuation in NRAMP1(+) mice, and deletion of pspD had a minor effect in NRAMP1(-) mice, while deletions of either pspC or pspG did not affect virulence. Experiments addressed at elucidating the role of PspB in virulence revealed that PspB is dispensable for uptake to and intracellular replication in cultured macrophages and resistance to complement-induced killing. Furthermore, the Psp system of S. Typhimurium was dispensable during pIV-induced secretin stress. In conclusion, our results demonstrate that removal of PspB reduces virulence in S. Typhimurium independently of host NRAMP1 expression, demonstrating that PspB has roles in intra-host survival distinct from the reported contributions of PspA. © 2014 The Authors.

  15. PSP: rapid identification of orthologous coding genes under positive selection across multiple closely related prokaryotic genomes.

    Su, Fei; Ou, Hong-Yu; Tao, Fei; Tang, Hongzhi; Xu, Ping

    2013-12-27

    With genomic sequences of many closely related bacterial strains made available by deep sequencing, it is now possible to investigate trends in prokaryotic microevolution. Positive selection is a sub-process of microevolution, in which a particular mutation is favored, causing the allele frequency to continuously shift in one direction. Wide scanning of prokaryotic genomes has shown that positive selection at the molecular level is much more frequent than expected. Genes with significant positive selection may play key roles in bacterial adaption to different environmental pressures. However, selection pressure analyses are computationally intensive and awkward to configure. Here we describe an open access web server, which is designated as PSP (Positive Selection analysis for Prokaryotic genomes) for performing evolutionary analysis on orthologous coding genes, specially designed for rapid comparison of dozens of closely related prokaryotic genomes. Remarkably, PSP facilitates functional exploration at the multiple levels by assignments and enrichments of KO, GO or COG terms. To illustrate this user-friendly tool, we analyzed Escherichia coli and Bacillus cereus genomes and found that several genes, which play key roles in human infection and antibiotic resistance, show significant evidence of positive selection. PSP is freely available to all users without any login requirement at: http://db-mml.sjtu.edu.cn/PSP/. PSP ultimately allows researchers to do genome-scale analysis for evolutionary selection across multiple prokaryotic genomes rapidly and easily, and identify the genes undergoing positive selection, which may play key roles in the interactions of host-pathogen and/or environmental adaptation.

  16. A CMOS In-Pixel CTIA High Sensitivity Fluorescence Imager.

    Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

    2011-10-01

    Traditionally, charge coupled device (CCD) based image sensors have held sway over the field of biomedical imaging. Complementary metal oxide semiconductor (CMOS) based imagers so far lack sensitivity leading to poor low-light imaging. Certain applications including our work on animal-mountable systems for imaging in awake and unrestrained rodents require the high sensitivity and image quality of CCDs and the low power consumption, flexibility and compactness of CMOS imagers. We present a 132×124 high sensitivity imager array with a 20.1 μm pixel pitch fabricated in a standard 0.5 μ CMOS process. The chip incorporates n-well/p-sub photodiodes, capacitive transimpedance amplifier (CTIA) based in-pixel amplification, pixel scanners and delta differencing circuits. The 5-transistor all-nMOS pixel interfaces with peripheral pMOS transistors for column-parallel CTIA. At 70 fps, the array has a minimum detectable signal of 4 nW/cm(2) at a wavelength of 450 nm while consuming 718 μA from a 3.3 V supply. Peak signal to noise ratio (SNR) was 44 dB at an incident intensity of 1 μW/cm(2). Implementing 4×4 binning allowed the frame rate to be increased to 675 fps. Alternately, sensitivity could be increased to detect about 0.8 nW/cm(2) while maintaining 70 fps. The chip was used to image single cell fluorescence at 28 fps with an average SNR of 32 dB. For comparison, a cooled CCD camera imaged the same cell at 20 fps with an average SNR of 33.2 dB under the same illumination while consuming over a watt.

  17. Structured Analog CMOS Design

    Stefanovic, Danica

    2008-01-01

    Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament

  18. Postural imbalance and falls in PSP correlate with functional pathology of the thalamus.

    Zwergal, A; la Fougère, C; Lorenzl, S; Rominger, A; Xiong, G; Deutschenbaur, L; Linn, J; Krafczyk, S; Dieterich, M; Brandt, T; Strupp, M; Bartenstein, P; Jahn, K

    2011-07-12

    To determine how postural imbalance and falls are related to regional cerebral glucose metabolism (PET) and functional activation of the cerebral postural network (fMRI) in patients with progressive supranuclear palsy (PSP). Sixteen patients with PSP, who had self-monitored their frequency of falls, underwent a standardized clinical assessment, posturographic measurement of balance during modified sensory input, and a resting [¹⁸F]FDG-PET. In addition, patients performed an fMRI paradigm using mental imagery of standing. Results were compared to healthy controls (n = 16). The frequency of falls/month in patients (range 1-40) correlated with total PSP rating score (r = 0.90). Total sway path in PSP significantly correlated with frequency of falls, especially during modulated sensory input (eyes open: r = 0.62, eyes closed: r = 0.67, eyes open/head extended: r = 0.84, eyes open/foam-padded platform: r = 0.87). Higher sway path values and frequency of falls were associated with decreased regional glucose metabolism (rCGM) in the thalamus (sway path: r = -0.80, falls: r = -0.64) and increased rCGM in the precentral gyrus (sway path: r = 0.79, falls: r = 0.64). Mental imagery of standing during fMRI revealed a reduced activation of the mesencephalic brainstem tegmentum and the thalamus in patients with postural imbalance and falls. The new and clinically relevant finding of this study is that imbalance and falls in PSP are closely associated with thalamic dysfunction. Deficits in thalamic postural control get most evident when balance is assessed during modified sensory input. The results are consistent with the hypothesis that reduced thalamic activation via the ascending brainstem projections may cause postural imbalance in PSP.

  19. A CMOS Morlet Wavelet Generator

    A. I. Bautista-Castillo

    2017-04-01

    Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

  20. Analysis of Pumped Storage Plants (PSP) viability associated with other types of intermittent renewable energy

    Andrade, J G P; Barbosa, P S F; Luvizotto, E Jr; Zuculin, S; Pinto, Marrc; Filho, G L Tiago

    2014-01-01

    The energy generated by wind or solar photovoltaic (PV system) can be used by PSP to accumulate water in the upper reservoir, in the form of potential energy to be used later, during periods of high energy demand. This procedure offers the advantage of enabling the use of intermittent renewable energy source in times of growing needs of the electric power supply. The location of the PSP, the environmental aspects involved, their possible use for various purposes (stability of the power system at peak times, associate the turbine water for public supply purposes, among others) and the discussion of regulatory issues needs to be debated in the current context, where environmental issues require reliable sources of power generation and demand shows strong growth rates. A dynamic model is used to analyze the behavior of a PSP proposal for a site in Brazil, analyzing a complete cycle of its operation as a pump or turbine. The existing difficulties to use this proposal based on existing regulatory policies are also discussed, and a list of recommended adjustments is provided to allow the penetrations of PSP projects in the Brazilian institutional framework, coupled with other intermittent energy sources

  1. Electrical Interconnections Through CMOS Wafers

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

  2. Active Pixel Sensors: Are CCD's Dinosaurs?

    Fossum, Eric R.

    1993-01-01

    Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

  3. THE ACCURACY OF Hβ CCD PHOTOMETRY

    C. Kim

    1994-12-01

    Full Text Available We have undertaken CCD observations of field standard stars with Hβ photometric system to investigate the reliability of Hβ CCD photometry. Flat fielding with dome flat and sky flat for Hβw and Hβn filter was compared with that of B filter in UBV system and, from these, we have not found any difference. It was confirmed that there is a good linear relationship between our Hβ values observed with 2.3m reflector and standard values. However, Hβ values observed with 60cm reflector at Sobaeksan Astronomy Observatory showed very poor relationship. To investigate the accuracy of Hβ CCD photometry for fainter objects, open cluster NGC2437 was observed and reduced with DoPHOT, and the results were compared with those for photoelectric photometry of Stetson (1981.

  4. Room Temperature Stable PspA-Based Nanovaccine Induces Protective Immunity

    Danielle A. Wagner-Muñiz

    2018-03-01

    Full Text Available Streptococcus pneumoniae is a major causative agent of pneumonia, a debilitating disease particularly in young and elderly populations, and is the leading worldwide cause of death in children under the age of five. While there are existing vaccines against S. pneumoniae, none are protective across all serotypes. Pneumococcal surface protein A (PspA, a key virulence factor of S. pneumoniae, is an antigen that may be incorporated into future vaccines to address the immunological challenges presented by the diversity of capsular antigens. PspA has been shown to be immunogenic and capable of initiating a humoral immune response that is reactive across approximately 94% of pneumococcal strains. Biodegradable polyanhydrides have been studied as a nanoparticle-based vaccine (i.e., nanovaccine platform to stabilize labile proteins, to provide adjuvanticity, and enhance patient compliance by providing protective immunity in a single dose. In this study, we designed a room temperature stable PspA-based polyanhydride nanovaccine that eliminated the need for a free protein component (i.e., 100% encapsulated within the nanoparticles. Mice were immunized once with the lead nanovaccine and upon challenge, presented significantly higher survival rates than animals immunized with soluble protein alone, even with a 25-fold reduction in protein dose. This lead nanovaccine formulation performed similarly to protein adjuvanted with Alum, however, with much less tissue reactogenicity at the site of immunization. By eliminating the free PspA from the nanovaccine formulation, the lead nanovaccine was efficacious after being stored dry for 60 days at room temperature, breaking the need for maintaining the cold chain. Altogether, this study demonstrated that a single dose PspA-based nanovaccine against S. pneumoniae induced protective immunity and provided thermal stability when stored at room temperature for at least 60 days.

  5. CSF neurofilament light chain and phosphorylated tau 181 predict disease progression in PSP.

    Rojas, Julio C; Bang, Jee; Lobach, Iryna V; Tsai, Richard M; Rabinovici, Gil D; Miller, Bruce L; Boxer, Adam L

    2018-01-23

    To determine the ability of CSF biomarkers to predict disease progression in progressive supranuclear palsy (PSP). We compared the ability of baseline CSF β-amyloid 1-42 , tau, phosphorylated tau 181 (p-tau), and neurofilament light chain (NfL) concentrations, measured by INNO-BIA AlzBio3 or ELISA, to predict 52-week changes in clinical (PSP Rating Scale [PSPRS] and Schwab and England Activities of Daily Living [SEADL]), neuropsychological, and regional brain volumes on MRI using linear mixed effects models controlled for age, sex, and baseline disease severity, and Fisher F density curves to compare effect sizes in 50 patients with PSP. Similar analyses were done using plasma NfL measured by single molecule arrays in 141 patients. Higher CSF NfL concentration predicted more rapid decline (biomarker × time interaction) over 52 weeks in PSPRS ( p = 0.004, false discovery rate-corrected) and SEADL ( p = 0.008), whereas lower baseline CSF p-tau predicted faster decline on PSPRS ( p = 0.004). Higher CSF tau concentrations predicted faster decline by SEADL ( p = 0.004). The CSF NfL/p-tau ratio was superior for predicting change in PSPRS, compared to p-tau ( p = 0.003) or NfL ( p = 0.001) alone. Higher NfL concentrations in CSF or blood were associated with greater superior cerebellar peduncle atrophy (fixed effect, p ≤ 0.029 and 0.008, respectively). Both CSF p-tau and NfL correlate with disease severity and rate of disease progression in PSP. The inverse correlation of p-tau with disease severity suggests a potentially different mechanism of tau pathology in PSP as compared to Alzheimer disease. Copyright © 2017 American Academy of Neurology.

  6. Typical effects of laser dazzling CCD camera

    Zhang, Zhen; Zhang, Jianmin; Shao, Bibo; Cheng, Deyan; Ye, Xisheng; Feng, Guobin

    2015-05-01

    In this article, an overview of laser dazzling effect to buried channel CCD camera is given. The CCDs are sorted into staring and scanning types. The former includes the frame transfer and interline transfer types. The latter includes linear and time delay integration types. All CCDs must perform four primary tasks in generating an image, which are called charge generation, charge collection, charge transfer and charge measurement. In camera, the lenses are needed to input the optical signal to the CCD sensors, in which the techniques for erasing stray light are used. And the electron circuits are needed to process the output signal of CCD, in which many electronic techniques are used. The dazzling effects are the conjunct result of light distribution distortion and charge distribution distortion, which respectively derive from the lens and the sensor. Strictly speaking, in lens, the light distribution is not distorted. In general, the lens are so well designed and fabricated that its stray light can be neglected. But the laser is of much enough intensity to make its stray light obvious. In CCD image sensors, laser can induce a so large electrons generation. Charges transfer inefficiency and charges blooming will cause the distortion of the charge distribution. Commonly, the largest signal outputted from CCD sensor is restricted by capability of the collection well of CCD, and can't go beyond the dynamic range for the subsequent electron circuits maintaining normal work. So the signal is not distorted in the post-processing circuits. But some techniques in the circuit can make some dazzling effects present different phenomenon in final image.

  7. SiGe BiCMOS manufacturing platform for mmWave applications

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  8. Comparison of a CCD and an APS for soft X-ray diffraction

    Stewart, Graeme; Bates, R; Blue, A; Maneuski, D; Clark, A; Turchetta, R; Dhesi, S S; Marchal, J; Steadman, P; Tartoni, N

    2011-01-01

    We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost. The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 μm on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS. In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects. The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.

  9. Comparison of a CCD and an APS for soft X-ray diffraction

    Stewart, Graeme; Bates, R.; Blue, A.; Clark, A.; Dhesi, S. S.; Maneuski, D.; Marchal, J.; Steadman, P.; Tartoni, N.; Turchetta, R.

    2011-12-01

    We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost. The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 μm on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS. In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects. The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.

  10. A new and efficient transient noise analysis technique for simulation of CCD image sensors or particle detectors

    Bolcato, P.; Jarron, P.; Poujois, R.

    1993-01-01

    CCD image sensors or switched capacitor circuits used for particle detectors have a certain noise level affecting the resolution of the detector. A new noise simulation technique for these devices is presented that has been implemented in the circuit simulator ELDO. The approach is particularly useful for noise simulation in analog sampling circuits. Comparison between simulations and experimental results has been made and is shown for a 1.5 μ CMOS current mode amplifier designed for high-rate particle detectors. (R.P.) 5 refs., 7 figs

  11. Protein diffraction experiments with Atlas CCD detector

    Dohnálek, Jan; Kovaľ, Tomáš; Dušek, Michal

    2008-01-01

    Roč. 64, Suppl. - abstracts (2008), C192 ISSN 0108-7673. [Congress of the International Union of Crystallography (IUCr) /21./. 23.08.2008-31.08.2008, Osaka] Institutional research plan: CEZ:AV0Z10100521 Keywords : x-ray data collection * CCD detectors * protein crystallography applications Subject RIV: BM - Solid Matter Physics ; Magnetism

  12. Check-All-That-Apply (CATA), Sorting, and Polarized Sensory Positioning (PSP) with Astringent Stimuli

    Fleming, Erin E.; Ziegler, Gregory R.; Hayes, John E.

    2015-01-01

    Multiple rapid sensory profiling techniques have been developed as more efficient alternatives to traditional sensory descriptive analysis. Here, we compare the results of three rapid sensory profiling techniques – check-all-that-apply (CATA), sorting, and polarized sensory positioning (PSP) – using a diverse range of astringent stimuli. These rapid methods differ in their theoretical basis, implementation, and data analyses, and the relative advantages and limitations are largely unexplored. Additionally, we were interested in using these methods to compare varied astringent stimuli, as these compounds are difficult to characterize using traditional descriptive analysis due to high fatigue and potential carry-over. In the CATA experiment, subjects (n=41) were asked to rate the overall intensity of each stimulus as well as to endorse any relevant terms (from a list of 13) which characterized the sample. In the sorting experiment, subjects (n=30) assigned intensity-matched stimuli into groups 1-on-1 with the experimenter. In the PSP experiment, (n=41) subjects first sampled and took notes on three blind references (‘poles’) before rating each stimulus for its similarity to each of the 3 poles. Two-dimensional perceptual maps from correspondence analysis (CATA), multidimensional scaling (sorting), and multiple factor analysis (PSP) were remarkably similar, with normalized RV coefficients indicating significantly similar plots, regardless of method. Agglomerative hierarchical clustering of all data sets using Ward’s minimum variance as the linkage criteria showed the clusters of astringent stimuli were approximately based on the respective class of astringent agent. Based on the descriptive CATA data, it appears these differences may be due to the presence of side tastes such as bitterness and sourness, rather than astringent sub-qualities per se. Although all three methods are considered ‘rapid,’ our prior experience with sorting suggests it is best

  13. Custom CCD for adaptive optics applications

    Downing, Mark; Arsenault, Robin; Baade, Dietrich; Balard, Philippe; Bell, Ray; Burt, David; Denney, Sandy; Feautrier, Philippe; Fusco, Thierry; Gach, Jean-Luc; Diaz Garcia, José Javier; Guillaume, Christian; Hubin, Norbert; Jorden, Paul; Kasper, Markus; Meyer, Manfred; Pool, Peter; Reyes, Javier; Skegg, Michael; Stadler, Eric; Suske, Wolfgang; Wheeler, Patrick

    2006-06-01

    ESO and JRA2 OPTICON have funded e2v technologies to develop a compact packaged Peltier cooled 24 μm square 240x240 pixels split frame transfer 8-output back-illuminated L3Vision CCD3, L3Vision CCD for Adaptive Optic Wave Front Sensor (AO WFS) applications. The device is designed to achieve sub-electron read noise at frame rates from 25 Hz to 1,500 Hz and dark current lower than 0.01 e-/pixel/frame. The development has many unique features. To obtain high frame rates, multi-output EMCCD gain registers and metal buttressing of row clock lines are used. The baseline device is built in standard silicon. In addition, a split wafer run has enabled two speculative variants to be built; deep depletion silicon devices to improve red response and devices with an electronic shutter to extend use to Rayleigh and Pulsed Laser Guide Star applications. These are all firsts for L3Vision CCDs. The designs of the CCD and Peltier package have passed their reviews and fabrication has begun. This paper will describe the progress to date, the requirements and the design of the CCD and compact Peltier package, technology trade-offs, schedule and proposed test plan. High readout speed, low noise and compactness (requirement to fit in confined spaces) provide special challenges to ESO's AO variant of its NGC, New General detector Controller to drive this CCD. This paper will describe progress made on the design of the controller to meet these special needs.

  14. Large area CMOS image sensors

    Turchetta, R; Guerrini, N; Sedgwick, I

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  15. The pancreas responds to remote damage and systemic stress by secretion of the pancreatic secretory proteins PSP/regI and PAP/regIII.

    Reding, Theresia; Palmiere, Cristian; Pazhepurackel, Clinsyjos; Schiesser, Marc; Bimmler, Daniel; Schlegel, Andrea; Süss, Ursula; Steiner, Sabrina; Mancina, Leandro; Seleznik, Gitta; Graf, Rolf

    2017-05-02

    In patients with infection and sepsis serum levels of Pancreatic Stone protein/regenerating protein I (PSP) are highly elevated. The origin of PSP during these conditions is presumably the pancreas, however, an intestinal origin cannot be excluded. Similarly, pancreatitis-associated protein (PAP) was identified in the pancreas. These proteins were also localized in intestinal organs. Here we aim to elucidate the bio-distribution of PSP and PAP in animal models of sepsis and in healthy humans. PSP and PAP responded to remote lesions in rats although the pancreatic response was much more pronounced than the intestinal. Tissue distribution of PSP demonstrated a 100-fold higher content in the pancreas compared to any other organ while PAP was most abundant in the small intestine. Both proteins responded to CLP or sham operation in the pancreas. PSP also increased in the intestine during CLP. The distribution of PSP and PAP in human tissue mirrored the distribution in the murine models. Distribution of PSP and PAP was visualized by immunohistochemistry. Rats and mice underwent midline laparotomies followed by mobilization of tissue and incision of the pancreatic duct or duodenum. Standard cecum-ligation-puncture (CLP) procedures or sham laparotomies were performed. Human tissue extracts were analyzed for PSP and PAP. The pancreas reacts to remote lesions and septic insults in mice and rats with increased PSP synthesis, while PAP is selectively responsive to septic events. Furthermore, our results suggest that serum PSP in septic patients is predominantly derived through an acute phase response of the pancreas.

  16. Absorbed dose by a CMOS in radiotherapy

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

    2011-10-01

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  17. Noise characteristics of neutron images obtained by cooled CCD device

    Taniguchi, Ryoichi; Sasaki, Ryoya; Okuda, Shuichi; Okamoto, Ken-Ichi; Ogawa, Yoshihiro; Tsujimoto, Tadashi

    2009-01-01

    The noise characteristics of a cooled CCD device induced by neutron and gamma ray irradiation have been investigated. In the cooled CCD images, characteristic white spot noises (CCD noise) frequently appeared, which have a shape like a pixel in most cases and their brightness is extremely high compared with that of the image pattern. They could be divided into the two groups, fixed pattern noise (FPN) and random noise. The former always appeared in the same position in the image and the latter appeared at any position. In the background image, nearly all of the CCD noises were found to be the FPN, while many of them were the random noise during the irradiation. The random CCD noises increased with irradiation and decreased soon after the irradiation. In the case of large irradiation, a part of the CCD noise remained as the FPN. These facts suggest that the CCD noise is a phenomenon strongly relating to radiation damage of the CCD device.

  18. Data-Acquisition Software for PSP/TSP Wind-Tunnel Cameras

    Amer, Tahani R.; Goad, William K.

    2005-01-01

    Wing-Viewer is a computer program for acquisition and reduction of image data acquired by any of five different scientificgrade commercial electronic cameras used at Langley Research center to observe wind-tunnel models coated with pressure or temperature-sensitive paints (PSP/TSP). Wing-Viewer provides full automation of camera operation and acquisition of image data, and has limited data-preprocessing capability for quick viewing of the results of PSP/TSP test images. Wing- Viewer satisfies a requirement for a standard interface between all the cameras and a single personal computer: Written by use of Microsoft Visual C++ and the Microsoft Foundation Class Library as a framework, Wing-Viewer has the ability to communicate with the C/C++ software libraries that run on the controller circuit cards of all five cameras.

  19. Effects of Robot Assisted Gait Training in Progressive Supranuclear Palsy (PSP: a preliminary report.

    Patrizio eSale

    2014-04-01

    Full Text Available Background and Purpose: Progressive supranuclear palsy (PSP is a rare neurodegenerative disease clinically characterized by prominent axial extrapyramidal motor symptoms with frequent falls. Over the last years the introduction of robotic technologies to recover lower limb function has been greatly employed in the rehabilitative practice. This observational trial is aimed at investigating the feasibility, the effectiveness and the efficacy of end-effector robot training in people with PSP.Method: Pilot observational trial.Participants: Five cognitively intact participants with PSP and gait disorders.Interventions: Patients were submitted to a rehabilitative program of robot-assisted walking sessions for 45 minutes, 5 times a week for 4 weeks.Main outcome measures: The spatiotemporal parameters at the beginning (T0 and at the end of treatment (T1 were recorded by a gait analysis laboratory.Results: Robot training was feasible, acceptable and safe and all participants completed the prescribed training sessions. All patients showed an improvement in the gait index (Mean velocity, Cadence, Step length and Step width (T0 versus T1.Conclusions: Robot training is a feasible and safe form of rehabilitation for cognitively intact people with PSP. This innovative approach can contribute to improve lower limb motor recovery. The focus on gait recovery is another quality that makes this research important for clinical practice. On the whole, the simplicity of treatment, the lack of side effects and the positive results in the patients support the recommendation to extend the trials of this treatment. Further investigation regarding the effectiveness of robot training in time is necessary.Trial registration: ClinicalTrials.gov NCT01668407.

  20. Finanční analýza PSP enegineering, a. s.

    Červinková, Hana

    2007-01-01

    The purpose of this work is to carry out financial analysis of a manufacturing company which is aimed at discovering of its total financial health, present progress and is also trying to evaluate future perspective. In the methodological part there are selected methods and procedures of financial analysis characterized which are applied also in the practical part. This part is composed of several sections. In the introduction the company PSP engineering a.s. is introduced, also its focus and ...

  1. Fully depleted back-illuminated p-channel CCD development

    Bebek, Chris J.; Bercovitz, John H.; Groom, Donald E.; Holland, Stephen E.; Kadel, Richard W.; Karcher, Armin; Kolbe, William F.; Oluseyi, Hakeem M.; Palaio, Nicholas P.; Prasad, Val; Turko, Bojan T.; Wang, Guobin

    2003-07-08

    An overview of CCD development efforts at Lawrence Berkeley National Laboratory is presented. Operation of fully-depleted, back-illuminated CCD's fabricated on high resistivity silicon is described, along with results on the use of such CCD's at ground-based observatories. Radiation damage and point-spread function measurements are described, as well as discussion of CCD fabrication technologies.

  2. Photon counting imaging and centroiding with an electron-bombarded CCD using single molecule localisation software

    Hirvonen, Liisa M.; Barber, Matthew J.; Suhling, Klaus

    2016-01-01

    Photon event centroiding in photon counting imaging and single-molecule localisation in super-resolution fluorescence microscopy share many traits. Although photon event centroiding has traditionally been performed with simple single-iteration algorithms, we recently reported that iterative fitting algorithms originally developed for single-molecule localisation fluorescence microscopy work very well when applied to centroiding photon events imaged with an MCP-intensified CMOS camera. Here, we have applied these algorithms for centroiding of photon events from an electron-bombarded CCD (EBCCD). We find that centroiding algorithms based on iterative fitting of the photon events yield excellent results and allow fitting of overlapping photon events, a feature not reported before and an important aspect to facilitate an increased count rate and shorter acquisition times.

  3. In vitro comparison between the image obtained using PSP plates and Kodak E-speed films.

    Petel, R; Yaroslavsky, L; Kaffe, I

    2014-07-01

    The aim of this study was to compare the intra-oral radiographic images obtained by a PSP digital radiography system ("Orex", Israel) with that obtained using Kodak Ultra speed films in terms of image quality, radiation dosage and diagnostic value. The physical measurement of image quality was conducted with an aluminum step-wedge. Radiation dosage was measured with a dosimeter. Fog and base levels were measured by developing unexposed films and scanning unexposed PSP plates. The in vitro model included preparation and radiographic evaluation of approximal artificial lesions in premolars and molars in depths ranging from 0.25 mm to 1.00 mm. Radiographs were evaluated for the existence of a lesion and its size by 8 experienced clinicians. Relative contrast was similar in both methods. The resolving power of the digital system was lower than that of the E-speed film. As for the subjective evaluation of artificial lesions, there was no significant difference between the two methods excluding those tooth images without lesions, where the analog method was found to be more accurate. The PSP system ("Orex") provides good image quality and diagnostic information with reduced exposure when compared with E-speed film.

  4. Macromolecular crystallography with a large format CMOS detector

    Nix, Jay C., E-mail: jcnix@lbl.gov [Molecular Biology Consortium 12003 S. Pulaski Rd. #166 Alsip, IL 60803 U.S.A (United States)

    2016-07-27

    Recent advances in CMOS technology have allowed the production of large surface area detectors suitable for macromolecular crystallography experiments [1]. The Molecular Biology Consortium (MBC) Beamline 4.2.2 at the Advanced Light Source in Berkeley, CA, has installed a 2952 x 2820 mm RDI CMOS-8M detector with funds from NIH grant S10OD012073. The detector has a 20nsec dead pixel time and performs well with shutterless data collection strategies. The sensor obtains sharp point response and minimal optical distortion by use of a thin fiber-optic plate between the phosphor and sensor module. Shutterless data collections produce high-quality redundant datasets that can be obtained in minutes. The fine-sliced data are suitable for processing in standard crystallographic software packages (XDS, HKL2000, D*TREK, MOSFLM). Faster collection times relative to the previous CCD detector have resulted in a record number of datasets collected in a calendar year and de novo phasing experiments have resulted in publications in both Science and Nature [2,3]. The faster collections are due to a combination of the decreased overhead requirements of shutterless collections combined with exposure times that have decreased by over a factor of 2 for images with comparable signal to noise of the NOIR-1 detector. The overall increased productivity has allowed the development of new beamline capabilities and data collection strategies.

  5. CMOS Integrated Carbon Nanotube Sensor

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-01-01

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  6. A self triggered intensified Ccd (Stic)

    Charon, Y.; Laniece, P.; Bendali, M.

    1990-01-01

    We are developing a new device based on the results reported previously of the successfull coincidence detection of β- particles with a high spatial resolution [1]. The novelty of the device consists in triggering an intensified CCD, i.e. a CCD coupled to an image intensifier (II), by an electrical signal collected from the II itself. This is a suitable procedure for detecting with high efficiency and high resolution low light rare events. The trigger pulse is obtained from the secondary electrons produced by multiplication in a double microchannel plate (MCP) and collected on the aluminized layer protecting the phosphor screen in the II. Triggering efficiencies up to 80% has been already achieved

  7. Modelling charge storage in Euclid CCD structures

    Clarke, A S; Holland, A; Hall, D J; Burt, D

    2012-01-01

    The primary aim of ESA's proposed Euclid mission is to observe the distribution of galaxies and galaxy clusters, enabling the mapping of the dark architecture of the universe [1]. This requires a high performance detector, designed to endure a harsh radiation environment. The e2v CCD204 image sensor was redesigned for use on the Euclid mission [2]. The resulting e2v CCD273 has a narrower serial register electrode and transfer channel compared to its predecessor, causing a reduction in the size of charge packets stored, thus reducing the number of traps encountered by the signal electrons during charge transfer and improving the serial Charge Transfer Efficiency (CTE) under irradiation [3]. The proposed Euclid CCD has been modelled using the Silvaco TCAD software [4], to test preliminary calculations for the Full Well Capacity (FWC) and the channel potential of the device and provide indications of the volume occupied by varying signals. These results are essential for the realisation of the mission objectives and for radiation damage studies, with the aim of producing empirically derived formulae to approximate signal-volume characteristics in the devices. These formulae will be used in the radiation damage (charge trapping) models. The Silvaco simulations have been tested against real devices to compare the experimental measurements to those predicted in the models. Using these results, the implications of this study on the Euclid mission can be investigated in more detail.

  8. CMOS MEMS Fabrication Technologies and Devices

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  9. CCD Photometry Using Multiple Comparison Stars

    Yonggi Kim

    2004-09-01

    Full Text Available The accuracy of CCD observations obtained at the Korean 1.8 m telescope has been studied. Seventeen comparison stars in the vicinity of the cataclysmic variable BG CMi have been measured. The ``artificial" star has been used instead of the ``control" star, what made possible to increase accuracy estimates by a factor of 1.3-2.1 times for ``good" and ``cloudy" nights, respectively. The algorithm of iterative determination of accuracy and weights of few comparison stars contributing to the artificial star, has been presented. The accuracy estimates for 13-mag stars are around 0.002 m mag for exposure times of 30 sec.

  10. Neutron absorbed dose in a pacemaker CMOS

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

    2012-01-01

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

  11. Neutron absorbed dose in a pacemaker CMOS

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  12. CMOS test and evaluation a physical perspective

    Bhushan, Manjul

    2015-01-01

    This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

  13. New Design Concept for Universal CCD Controller

    Wonyong Han

    1994-06-01

    Full Text Available Currently, the CCDs are widely used in astronomical observations either in direct imaging use or spectroscopic mode. However according to the recent technical advances, new large format CCDs are rapidly developed which have better performances with higher quantum efficiency and sensitivity. In many cases, some microprocessors have been adopted to deal with necessary digital logic for a CCD imaging system. This could often lack the flexibility of a system for a user to upgrade with new devices, especially of it is a commercial product. A new design concept has been explored which could provide the opportunity to deal with any format of devices from ant manufactures effectively for astronomical purposes. Recently available PLD (Programmable Logic Devices technology makes it possible to develop such digital circuit design, which can be integrated into a single component, instead of using microprocessors. The design concept could dramatically increase the efficiency and flexibility of a CCD imaging system, particularly when new or large format devices are available and to upgrade the performance of a system. Some variable system control parameters can be selected by a user with a wider range of choice. The software can support such functional requirements very conveniently. This approach can be applied not only to astronomical purpose, but also to some related fields, such as remote sensing and industrial applications.

  14. CCD developed for scientific application by Hamamatsu

    Miyaguchi, K; Dezaki, J; Yamamoto, K

    1999-01-01

    We have developed CCDs for scientific applications that feature a low readout noise of less than 5 e-rms and low dark current of 10-25 pA/cm sup 2 at room temperature. CCDs with these characteristics will prove extremely useful in applications such as spectroscopic measurement and dental radiography. In addition, a large-area CCD of 2kx4k pixels and 15 mu m square pixel size has recently been completed for optical use in astronomical observations. Applications to X-ray astronomy require the most challenging device performance in terms of deep depletion, high CTE, and focal plane size, among others. An abuttable X-ray CCD, having 1024x1024 pixels and 24 mu m square pixel size, is to be installed in an international space station (ISS). We are now striving to achieve the lowest usable cooling temperature by means of a built-in TEC with limited power consumption. Details on the development status are described in this report. We would also like to present our future plans for a large active area and deep depleti...

  15. Analog filters in nanometer CMOS

    Uhrmann, Heimo; Zimmermann, Horst

    2014-01-01

    Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

  16. CMOS Analog IC Design: Fundamentals

    Bruun, Erik

    2018-01-01

    This book is intended for use as the main textbook for an introductory course in CMOS analog integrated circuit design. It is aimed at electronics engineering students who have followed basic courses in mathematics, physics, circuit theory, electronics and signal processing. It takes the students directly from a basic level to a level where they can start working on simple analog IC design projects or continue their studies using more advanced textbooks in the field. A distinct feature of thi...

  17. High-voltage CMOS detectors

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  18. High-voltage CMOS detectors

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  19. CMOS optimization for radiation hardness

    Derbenwick, G.F.; Fossum, J.G.

    1975-01-01

    Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

  20. Absorbed dose by a CMOS in radiotherapy

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  1. Microelectronic test structures for CMOS technology

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  2. CMOS cassette for digital upgrade of film-based mammography systems

    Baysal, Mehmet A.; Toker, Emre

    2006-03-01

    While full-field digital mammography (FFDM) technology is gaining clinical acceptance, the overwhelming majority (96%) of the installed base of mammography systems are conventional film-screen (FSM) systems. A high performance, and economical digital cassette based product to conveniently upgrade FSM systems to FFDM would accelerate the adoption of FFDM, and make the clinical and technical advantages of FFDM available to a larger population of women. The planned FFDM cassette is based on our commercial Digital Radiography (DR) cassette for 10 cm x 10 cm field-of-view spot imaging and specimen radiography, utilizing a 150 micron columnar CsI(Tl) scintillator and 48 micron active-pixel CMOS sensor modules. Unlike a Computer Radiography (CR) cassette, which requires an external digitizer, our DR cassette transfers acquired images to a display workstation within approximately 5 seconds of exposure, greatly enhancing patient flow. We will present the physical performance of our prototype system against other FFDM systems in clinical use today, using established objective criteria such as the Modulation Transfer Function (MTF), Detective Quantum Efficiency (DQE), and subjective criteria, such as a contrast-detail (CD-MAM) observer performance study. Driven by the strong demand from the computer industry, CMOS technology is one of the lowest cost, and the most readily accessible technologies available for FFDM today. Recent popular use of CMOS imagers in high-end consumer cameras have also resulted in significant advances in the imaging performance of CMOS sensors against rivaling CCD sensors. This study promises to take advantage of these unique features to develop the first CMOS based FFDM upgrade cassette.

  3. Overexpression of PSP1 enhances growth of transgenic Arabidopsis plants under ambient air conditions.

    Han, Xiaofang; Peng, Keli; Wu, Haixia; Song, Shanshan; Zhu, Yerong; Bai, Yanling; Wang, Yong

    2017-07-01

    The importance of the phosphorylated pathway (PPSB) of L-serine (Ser) biosynthesis in plant growth and development has been demonstrated, but its specific role in leaves and interaction with photorespiration, the main leaf Ser biosynthetic pathway at daytime, are still unclear. To investigate whether changes in biosynthesis of Ser by the PPSB in leaves could have an impact on photorespiration and plant growth, we overexpressed PSP1, the last enzyme of this pathway, under control of the Cauliflower Mosaic Virus 35S promoter in Arabidopsis thaliana. Overexpressor plants grown in normal air displayed larger rosette diameter and leaf area as well as higher fresh and dry weight than the wild type. By contrast, no statistically significant differences to the wild type were observed when the overexpressor seedlings were transferred to elevated CO 2 , indicating a relationship between PSP1 overexpression and photorespiration. Additionally, the transgenic plants displayed higher photorespiration, an increase in CO 2 net-uptake and stronger expression in the light of genes encoding enzymes involved in photorespiration. We further demonstrated that expression of many genes involved in nitrogen assimilation was also promoted in leaves of transgenic plants and that leaf nitrate reductase activity increased in the light, too, although not in the dark. Our results suggest a close correlation between the function of PPSB and photorespiration, and also nitrogen metabolism in leaves.

  4. Charge diffusion in CCD X-ray detectors

    Pavlov, George G.; Nousek, John A.

    1999-01-01

    Critical to the detection of X-rays by CCDs, is the detailed process of charge diffusion and drift within the device. We reexamine the prescriptions currently used in the modeling of X-ray CCD detectors to provide analytic expressions for the charge distribution over the CCD pixels which are suitable for use in numerical simulations of CCD response. Our treatment results in models which predict charge distributions which are more centrally peaked and have flatter wings than the Gaussian shapes predicted by previous work and adopted in current CCD modeling codes

  5. PSP SAR interferometry monitoring of ground and structure deformations in the archeological site of Pompeii

    Costantini, Mario; Francioni, Elena; Paglia, Luca; Minati, Federico; Margottini, Claudio; Spizzichino, Daniele; Trigila, Alessandro; Iadanza, Carla; De Nigris, Bruno

    2016-04-01

    The "Major Project Pompeii" (MPP) is a great collective commitment of different institututions and people to set about solving the serious problem of conservation of the largest archeological sites in the world. The ancient city of Pompeii with its 66 hectares, 44 of which are excaveted, is divided into 9 regiones (district), subdivided in 118 insulae (blocks) and almost 1500 domus (houses), and is Unesco site since 1996. The Italian Ministry for Heritage and Cultural Activities and Tourism (MiBACT) and Finmeccanica Group have sealed an agreement whereby the Finmeccanica Group will donate innovative technologies and services for monitoring and protecting the archaeological site of Pompeii. Moreover, the Italian Institute for Environment Protection and Research (ISPRA) - Geological Survey of Italy, was also involved to support the ground based analysis and interpretation of the measurements provided by the industrial team, in order to promote an interdisciplinary approach. In this work, we will focus on ground deformation measurements obtained by satellite SAR interferometry and on their interpretation. The satellite monitoring service is based on the processing of COSMO-SkyMed Himage data by the e-Geos proprietary Persistent Scatterer Pair (PSP) SAR interferometry technology. The PSP technique is a proven SAR interferometry method characterized by the fact of exploiting in the processing only the relative properties between close points (pairs) in order to overcome atmospheric artifacts (which are one of the main problems of SAR interferometry). Validations analyses showed that this technique applied to COSMO-SkyMed Himage data is able to retrieve very dense (except of course on vegetated or cultivated areas) millimetric deformation measurements with sub-metric localization. By means of the COSMO-SkyMed PSP SAR interferometry processing, a historical analysis of the ground and structure deformations occurred over the entire archaeological site of Pompeii in the

  6. Utility and accuracy of perceptual voice and speech distinctions in the diagnosis of Parkinson's disease, PSP and MSA-P.

    Miller, Nick; Nath, Uma; Noble, Emma; Burn, David

    2017-06-01

    To determine if perceptual speech measures distinguish people with Parkinson's disease (PD), multiple system atrophy with predominant parkinsonism (MSA-P) and progressive supranuclear palsy (PSP). Speech-language therapists blind to patient characteristics employed clinical rating scales to evaluate speech/voice in 24 people with clinically diagnosed PD, 17 with PSP and 9 with MSA-P, matched for disease duration (mean 4.9 years, standard deviation 2.2). No consistent intergroup differences appeared on specific speech/voice variables. People with PD were significantly less impaired on overall speech/voice severity. Analyses by severity suggested further investigation around laryngeal, resonance and fluency changes may characterize individual groups. MSA-P and PSP compared with PD were distinguished by severity of speech/voice deterioration, but individual speech/voice parameters failed to consistently differentiate groups.

  7. BVRI CCD photometry of Omega Centauri

    Alcaino, G.; Liller, W.

    1987-01-01

    Color-magnitude diagrams (CMDs) of V vs B-V, V vs V-I, and V vs B-I have been constructed based on 179 BVRI CCD frames of two adjoining 4x2.5-arcmin fields in Omega Cen (NGC 5139) obtained with the 1.54-m Danish La Silla telescope. The spread in the main sequences noted in the three CMDs indicates that the wide range in chemical composition among the evolved stars in this cluster persists as well in the unevolved stars. This result suggests that the abundance variations are primordial. A difference in magnitude between the turnoff and the horizontal branch of 3.8 + or - 0.15 is found which is greater than a previous value. 38 references

  8. Programmable Clock Waveform Generation for CCD Readout

    Vicente, J. de; Castilla, J.; Martinez, G.; Marin, J.

    2006-07-01

    Charge transfer efficiency in CCDs is closely related to the clock waveform. In this paper, an experimental framework to explore different FPGA based clock waveform generator designs is described. Two alternative design approaches for controlling the rise/fall edge times and pulse width of the CCD clock signal have been implemented: level-control and time-control. Both approaches provide similar characteristics regarding the edge linearity and noise. Nevertheless, dissimilarities have been found with respect to the area and frequency range of application. Thus, while the time-control approach consumes less area, the level control approach provides a wider range of clock frequencies since it does not suffer capacitor discharge effect. (Author) 8 refs.

  9. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  10. JPL CMOS Active Pixel Sensor Technology

    Fossum, E. R.

    1995-01-01

    This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

  11. CCD camera eases the control of a soda recovery boiler; CCD-kamera helpottaa soodakattilan valvontaa

    Kinnunen, L.

    2001-07-01

    Fortum Technology has developed a CCD firebox camera, based on semiconductor technology, enduring hard conditions of soda recovery boiler longer than traditional cameras. The firebox camera air- cooled and the same air is pressed over the main lens so it remains clean despite of the alkaline liquor splashing around in the boiler. The image of the boiler is transferred through the main lens, image transfer lens and a special filter, mounted inside the camera tube, into the CCD camera. The first CCD camera system has been in use since 1999 in Sunila pulp mill in Kotka, owned by Myllykoski Oy and Enso Oyj. The mill has two medium-sized soda recovery boilers. The amount of black liquor, formed daily, is about 2000 tons DS, which is more than enough for the heat generation. Even electric power generation exceeds sometimes the demand, so the surplus power can be sold out. Black liquor is sprayed inside the soda recovery boiler with high pressure. The liquor form droplets in the boiler, the temperature of which is over 1000 deg C. A full-hot pile is formed at the bottom of the boiler after burning. The size and shape of the pile effect on the efficiency and the emissions of the boiler. The camera has operated well.

  12. 15 CFR 740.19 - Consumer Communications Devices (CCD).

    2010-01-01

    ... 15 Commerce and Foreign Trade 2 2010-01-01 2010-01-01 false Consumer Communications Devices (CCD... EXCEPTIONS § 740.19 Consumer Communications Devices (CCD). (a) Authorization. This License Exception... controllers designed for chemical processing) designated EAR99; (4) Graphics accelerators and graphics...

  13. Hybrid CMOS/Molecular Integrated Circuits

    Stan, M. R.; Rose, G. S.; Ziegler, M. M.

    CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

  14. Optoelectronic circuits in nanometer CMOS technology

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  15. CMOS foveal image sensor chip

    Bandera, Cesar (Inventor); Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Xia, Shu (Inventor)

    2002-01-01

    A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

  16. KMAH index and separation of PSP-waves from streamer data

    Mitrofanov, Georgy; Priimenko, Viatcheslav

    2017-08-01

    The presence of triplications (caustics) can be a serious problem in seismic data processing and analysis. The travel-time curve becomes multi-valued and the geometrical spreading correction factor tends to zero due to energy focusing. To select the regions of possible triplications (caustics) of travel-times, which can arise during the propagation of reflected seismic waves, we use the Keller-Maslov-Arnol'd-Hörmander (KMAH) index. The identification of such regions improves the selection of signals associated with target reflecting horizons and their use in solving various inverse dynamic problems, including amplitude-versus-offset (AVO) and full-waveform inversions. The importance of the KMAH index increases in 4D surveys when the structure of the model is already known, and it is necessary to conduct a detailed analysis of the shapes of seismic signals with increasing accuracy when solving inverse seismic problems. In addition, this index can be valuable when solving various marine seismic problems associated with single and converted waves, in particular with PSP-waves. The present work is dedicated to the separation of signals associated with this type of wave using surface marine seismic data. However, the proposed algorithm has a wider application. It is based on: (i) a priori information on the medium under study; (ii) ray tracing method. The ray tracing method enables the identification of the corresponding signals and the determination of the time and space intervals, in which such signals are most accurately traced. These intervals are used in the selection of target signals, particularly signals related to PSP-waves. In order to select optimal areas of observation with higher amplitudes of target signals, we use the τ -p transform. To improve the stability of the signal separation, KMAH index is used. This approach allows the elimination of possible triplications (caustics) in the travel-time curve from the selected intervals.

  17. A PSP-based small-signal MOSFET model for both quasi-static and nonquasi-static operations

    Aarts, A.C.T.; Smit, G.D.J.; Scholten, A.J.; Klaassen, D.B.M.

    2008-01-01

    In this paper, a small-signal MOSFET model is described, which takes the local effects of both velocity saturation and transverse mobility reduction into account. The model is based on the PSP model and is valid for both quasi-static and nonquasi-static (NQS) operations. Recently, it has been found

  18. Defective plastic infection-control barriers and faulty technique may cause PSP plate contamination used in digital intraoral radiography.

    Kuperstein, Arthur S

    2012-09-01

    Fifty-two disinfected photostimulable phosphor (PSP) plates in plastic barrier envelopes were evaluated for contamination following placement in 30 study participants. Forty-four plates were acceptable for use in the study. The risk factor was the abundant oropharyngeal microbial flora and its ability to breach infection-control barrier sheaths. The presence of bacterial colonies on an agar plate was used to determine bacterial contamination and the presence of any growth indicated failure of the barrier envelope. Before clinical placement of the plates, quality review of the PSP plates revealed defects in the integrity of 4 barrier envelopes most likely caused by forceps-related damage or failure to achieve a uniform seal during manufacturing. These defects allowed substantial contamination. Contamination also occurred as a result of failure to extract the PSP plate from the barrier envelope cleanly. Of the 44 barriers with no obvious signs of a defect, 3 produced bacterial growth following culture. The authors concluded that digital sensor sheathed in barrier envelopes remain a potential source of contamination. PSP plates must be disinfected between removal from a contaminated barrier envelope (used in a patient) and placement in a new barrier envelope. In addition, placement into the barrier envelope should ideally be carried out under aseptic conditions. Finally, the integrity of each sealed barrier envelope must be verified visually. Copyright © 2012. Published by Mosby, Inc. All rights reserved.

  19. A CMOS silicon spin qubit

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  20. BVI CCD photometry of 47 Tucanae

    Alcaino, G.; Liller, W.

    1987-01-01

    CCD BVI main-sequence photometry of 47 Tuc is presented, matched to the recent BVI isochrones of VandenBerg and Bell (1985). The main-sequence turnoffs are found to be at V = 17.60 + or - 0.1, B-V = 0.56 + or - 0.02; V-I = 0.68 + or - 0.02, and B-I = 1.24 + or - 0.02. The magnitude difference between the main-sequence turnoff and the horizontal branch is 3.55 + or - 0.15 for all three color indices. A consistent age for 47 Tuc of 17 Gyr and a consistent distance modulus of (m-M)v = 13.2 are obtained for all three indices, and an absolute magnitude of Mv = 0.85 is determined for the horizontal branch stars. The results also favor the adoption of (Fe/H) near -0.5 as the best abundance value for 47 Tuc. 38 references

  1. The inhibitory effects of polysaccharide peptides (PsP of Ganoderma lucidum against atherosclerosis in rats with dyslipidemia

    Titin Andri Wihastuti

    2017-04-01

    Full Text Available BackgroundAtherosclerosis occurs as a result of low-density lipoprotein (LDL deposits oxidation. Endothelial dysfunction is an early process of atherosclerosis. Restoring endothelial lining back to normal by endothelial progenitor cells (EPCs is critical for slowing or reversing vascular disease progression. Oxidative stress from hydrogen peroxide (H2O2 is increased in dyslipidemia so that antioxidant agent is required to prevent destruction of blood vessels.ObjectivesThis study aims to report Ganoderma lucidum polysaccharide peptide (PsP effects in atherogenic process by measuring H2O2 level, IL-10 level, and EPC number in blood serum, and also intima-media thickness of aorta in dyslipidemia Wistar rat model by giving them a hypercholesterol diet (HCD.Materials and methodsThe study was an experimental in vivo post-test with control group design. Thirty-five Wistar rats (Rattus norwegicus were divided into five groups (normal diet group, HCD group, and hypercholesterol groups that received 50 mg/kg, 150 mg/kg, and 300 mg/kg bodyweight PsP.ResultsEach treatment group showed significant results for the administration of PsP using the one-way analysis of variance test (p<0.050 for the reduction of H2O2 (p = 0.003, levels of IL-10 (p = 0.027, number of EPC in the blood serum (p = 0.011, and the intima-media thickness of the aorta (p = 0.000. PsP from G. lucidum is a potent antioxidant and may prevent atherogenesis process in patients with dyslipidemia.ConclusionsThe optimum doses of PsP in this study is 300 mg/kg bodyweight. Further studies are required to determine the antioxidant effects of PsP G. lucidum and its benefits in the management of dyslipidemia.

  2. A new approach to modelling radiation noise in CCD's

    Chugg, A.; Hopkinson, G.

    1998-01-01

    The energy depositions reported by Monte Carlo electron-photon irradiation transport codes are subject to a random error due to the finite number of particle histories used to generate the results. These statistical variations, normally a nuisance, may also be identified with the real radiation noise effects experienced by CCD pixels in persistent radiation environments. This paper explores the practicability of such radiation noise modelling by applying the ACCEPT code from the ITS suite to the case of a shielded CCD exposed to an electron flux. The results are compared with those obtained in a subsequent electron irradiation of the CCD by a Van de Graaff accelerator

  3. CCD camera system for use with a streamer chamber

    Angius, S.A.; Au, R.; Crawley, G.C.; Djalali, C.; Fox, R.; Maier, M.; Ogilvie, C.A.; Molen, A. van der; Westfall, G.D.; Tickle, R.S.

    1988-01-01

    A system based on three charge-coupled-device (CCD) cameras is described here. It has been used to acquire images from a streamer chamber and consists of three identical subsystems, one for each camera. Each subsystem contains an optical lens, CCD camera head, camera controller, an interface between the CCD and a microprocessor, and a link to a minicomputer for data recording and on-line analysis. Image analysis techniques have been developed to enhance the quality of the particle tracks. Some steps have been made to automatically identify tracks and reconstruct the event. (orig.)

  4. Carbon Nanotube Integration with a CMOS Process

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  5. CMOS sensors for atmospheric imaging

    Pratlong, Jérôme; Burt, David; Jerram, Paul; Mayer, Frédéric; Walker, Andrew; Simpson, Robert; Johnson, Steven; Hubbard, Wendy

    2017-09-01

    Recent European atmospheric imaging missions have seen a move towards the use of CMOS sensors for the visible and NIR parts of the spectrum. These applications have particular challenges that are completely different to those that have driven the development of commercial sensors for applications such as cell-phone or SLR cameras. This paper will cover the design and performance of general-purpose image sensors that are to be used in the MTG (Meteosat Third Generation) and MetImage satellites and the technology challenges that they have presented. We will discuss how CMOS imagers have been designed with 4T pixel sizes of up to 250 μm square achieving good charge transfer efficiency, or low lag, with signal levels up to 2M electrons and with high line rates. In both devices a low noise analogue read-out chain is used with correlated double sampling to suppress the readout noise and give a maximum dynamic range that is significantly larger than in standard commercial devices. Radiation hardness is a particular challenge for CMOS detectors and both of these sensors have been designed to be fully radiation hard with high latch-up and single-event-upset tolerances, which is now silicon proven on MTG. We will also cover the impact of ionising radiation on these devices. Because with such large pixels the photodiodes have a large open area, front illumination technology is sufficient to meet the detection efficiency requirements but with thicker than standard epitaxial silicon to give improved IR response (note that this makes latch up protection even more important). However with narrow band illumination reflections from the front and back of the dielectric stack on the top of the sensor produce Fabry-Perot étalon effects, which have been minimised with process modifications. We will also cover the addition of precision narrow band filters inside the MTG package to provide a complete imaging subsystem. Control of reflected light is also critical in obtaining the

  6. The design and development of low- and high-voltage ASICs for space-borne CCD cameras

    Waltham, N.; Morrissey, Q.; Clapp, M.; Bell, S.; Jones, L.; Torbet, M.

    2017-12-01

    The CCD remains the pre-eminent visible and UV wavelength image sensor in space science, Earth and planetary remote sensing. However, the design of space-qualified CCD readout electronics is a significant challenge with requirements for low-volume, low-mass, low-power, high-reliability and tolerance to space radiation. Space-qualified components are frequently unavailable and up-screened commercial components seldom meet project or international space agency requirements. In this paper, we describe an alternative approach of designing and space-qualifying a series of low- and high-voltage mixed-signal application-specific integrated circuits (ASICs), the ongoing development of two low-voltage ASICs with successful flight heritage, and two new high-voltage designs. A challenging sub-system of any CCD camera is the video processing and digitisation electronics. We describe recent developments to improve performance and tolerance to radiation-induced single event latchup of a CCD video processing ASIC originally developed for NASA's Solar Terrestrial Relations Observatory and Solar Dynamics Observatory. We also describe a programme to develop two high-voltage ASICs to address the challenges presented with generating a CCD's bias voltages and drive clocks. A 0.35 μm, 50 V tolerant, CMOS process has been used to combine standard low-voltage 3.3 V transistors with high-voltage 50 V diffused MOSFET transistors that enable output buffers to drive CCD bias drains, gates and clock electrodes directly. We describe a CCD bias voltage generator ASIC that provides 24 independent and programmable 0-32 V outputs. Each channel incorporates a 10-bit digital-to-analogue converter, provides current drive of up to 20 mA into loads of 10 μF, and includes current-limiting and short-circuit protection. An on-chip telemetry system with a 12-bit analogue-to-digital converter enables the outputs and multiple off-chip camera voltages to be monitored. The ASIC can drive one or more CCDs and

  7. Enzymatic study on AtCCD4 and AtCCD7 and their potential to form acyclic regulatory metabolites

    Bruno, Mark

    2016-09-29

    The Arabidopsis carotenoid cleavage dioxygenase 4 (AtCCD4) is a negative regulator of the carotenoid content of seeds and has recently been suggested as a candidate for the generation of retrograde signals that are thought to derive from the cleavage of poly-cis-configured carotene desaturation intermediates. In this work, we investigated the activity of AtCCD4 in vitro and used dynamic modeling to determine its substrate preference. Our results document strict regional specificity for cleavage at the C9–C10 double bond in carotenoids and apocarotenoids, with preference for carotenoid substrates and an obstructing effect on hydroxyl functions, and demonstrate the specificity for all-trans-configured carotenes and xanthophylls. AtCCD4 cleaved substrates with at least one ionone ring and did not convert acyclic carotene desaturation intermediates, independent of their isomeric states. These results do not support a direct involvement of AtCCD4 in generating the supposed regulatory metabolites. In contrast, the strigolactone biosynthetic enzyme AtCCD7 converted 9-cis-configured acyclic carotenes, such as 9-cis-ζ-carotene, 9\\'-cis-neurosporene, and 9-cis-lycopene, yielding 9-cis-configured products and indicating that AtCCD7, rather than AtCCD4, is the candidate for forming acyclic retrograde signals.

  8. Enzymatic study on AtCCD4 and AtCCD7 and their potential to form acyclic regulatory metabolites

    Bruno, Mark; Koschmieder, Julian; Wuest, Florian; Schaub, Patrick; Fehling-Kaschek, Mirjam; Timmer, Jens; Beyer, Peter; Al-Babili, Salim

    2016-01-01

    The Arabidopsis carotenoid cleavage dioxygenase 4 (AtCCD4) is a negative regulator of the carotenoid content of seeds and has recently been suggested as a candidate for the generation of retrograde signals that are thought to derive from the cleavage of poly-cis-configured carotene desaturation intermediates. In this work, we investigated the activity of AtCCD4 in vitro and used dynamic modeling to determine its substrate preference. Our results document strict regional specificity for cleavage at the C9–C10 double bond in carotenoids and apocarotenoids, with preference for carotenoid substrates and an obstructing effect on hydroxyl functions, and demonstrate the specificity for all-trans-configured carotenes and xanthophylls. AtCCD4 cleaved substrates with at least one ionone ring and did not convert acyclic carotene desaturation intermediates, independent of their isomeric states. These results do not support a direct involvement of AtCCD4 in generating the supposed regulatory metabolites. In contrast, the strigolactone biosynthetic enzyme AtCCD7 converted 9-cis-configured acyclic carotenes, such as 9-cis-ζ-carotene, 9'-cis-neurosporene, and 9-cis-lycopene, yielding 9-cis-configured products and indicating that AtCCD7, rather than AtCCD4, is the candidate for forming acyclic retrograde signals.

  9. Enzymatic study on AtCCD4 and AtCCD7 and their potential to form acyclic regulatory metabolites

    Bruno, Mark; Koschmieder, Julian; Wuest, Florian; Schaub, Patrick; Fehling-Kaschek, Mirjam; Timmer, Jens; Beyer, Peter; Al-Babili, Salim

    2016-01-01

    The Arabidopsis carotenoid cleavage dioxygenase 4 (AtCCD4) is a negative regulator of the carotenoid content of seeds and has recently been suggested as a candidate for the generation of retrograde signals that are thought to derive from the cleavage of poly-cis-configured carotene desaturation intermediates. In this work, we investigated the activity of AtCCD4 in vitro and used dynamic modeling to determine its substrate preference. Our results document strict regional specificity for cleavage at the C9–C10 double bond in carotenoids and apocarotenoids, with preference for carotenoid substrates and an obstructing effect on hydroxyl functions, and demonstrate the specificity for all-trans-configured carotenes and xanthophylls. AtCCD4 cleaved substrates with at least one ionone ring and did not convert acyclic carotene desaturation intermediates, independent of their isomeric states. These results do not support a direct involvement of AtCCD4 in generating the supposed regulatory metabolites. In contrast, the strigolactone biosynthetic enzyme AtCCD7 converted 9-cis-configured acyclic carotenes, such as 9-cis-ζ-carotene, 9'-cis-neurosporene, and 9-cis-lycopene, yielding 9-cis-configured products and indicating that AtCCD7, rather than AtCCD4, is the candidate for forming acyclic retrograde signals. PMID:27811075

  10. Optimum color filters for CCD digital cameras

    Engelhardt, Kai; Kunz, Rino E.; Seitz, Peter; Brunner, Harald; Knop, Karl

    1993-12-01

    As part of the ESPRIT II project No. 2103 (MASCOT) a high performance prototype color CCD still video camera was developed. Intended for professional usage such as in the graphic arts, the camera provides a maximum resolution of 3k X 3k full color pixels. A high colorimetric performance was achieved through specially designed dielectric filters and optimized matrixing. The color transformation was obtained by computer simulation of the camera system and non-linear optimization which minimized the perceivable color errors as measured in the 1976 CIELUV uniform color space for a set of about 200 carefully selected test colors. The color filters were designed to allow perfect colorimetric reproduction in principle and at the same time with imperceptible color noise and with special attention to fabrication tolerances. The camera system includes a special real-time digital color processor which carries out the color transformation. The transformation can be selected from a set of sixteen matrices optimized for different illuminants and output devices. Because the actual filter design was based on slightly incorrect data the prototype camera showed a mean colorimetric error of 2.7 j.n.d. (CIELUV) in experiments. Using correct input data in the redesign of the filters, a mean colorimetric error of only 1 j.n.d. (CIELUV) seems to be feasible, implying that it is possible with such an optimized color camera to achieve such a high colorimetric performance that the reproduced colors in an image cannot be distinguished from the original colors in a scene, even in direct comparison.

  11. [Can solar/geomagnetic activity restrict the occurrence of some shellfish poisoning outbreaks? The example of PSP caused by Gymnodinium catenatum at the Atlantic Portuguese coast].

    Vale, P

    2013-01-01

    Cyclic outbreaks of accumulation of paralytic shellfish poisoning (PSP) toxins in mussels attributed to Gymnodinium catenatum blooms displayed several of the highest inter-annual maxima coincidental with minima of the 11-year solar sunspot number (SSN) cycle. The monthly distribution of PSP was associated with low levels of the solar radio flux, a more quantitative approach than SSN for fluctuations in solar activity. A comparison between monthly distribution of PSP and other common biotoxins (okadaic acid (OA), dinophysistoxin-2 (DTX2) and amnesic shellfish poisoning (ASP) toxins) demonstrated that only PSP was significantly associated with low levels of radio flux (p < 0.01). PSP occurrence suggests a prior decline in solar activity could be required to act as a trigger, in a similar manner to a photoperiodic signal. The seasonal frequency increased towards autumn during the study period, which might be related to the progressive atmospheric cut-off of deleterious radiation associated with the seasonal change in solar declination, and might play an additional role in seasonal signal-triggering. PSP distribution was also associated with low levels of the geomagnetic index Aa. A comparison between monthly distribution of PSP and other common biotoxins, also demonstrated that only PSP was significantly associated with low levels of the Aa index (p < 0.01). In some years of SSN minima no significant PSP-outbreaks in mussels were detected. This was attributed to a steady rise in geomagnetic activity that could disrupt the triggering signal. Global distribution patterns show that hotspots for G. catenatum blooms are regions with deficient crustal magnetic anomalies. In addition to the variable magnetic field mostly of solar origin, static fields related to magnetized rocks in the crust and upper mantle might play a role in restricting worldwide geographic distribution.

  12. PSP SAR interferometry monitoring of ground and structure deformations applied to archaeological sites

    Costantini, Mario; Francioni, Elena; Trillo, Francesco; Minati, Federico; Margottini, Claudio; Spizzichino, Daniele; Trigila, Alessandro; Iadanza, Carla

    2017-04-01

    Archaeological sites and cultural heritage are considered as critical assets for the society, representing not only the history of region or a culture, but also contributing to create a common identity of people living in a certain region. In this view, it is becoming more and more urgent to preserve them from climate changes effect and in general from their degradation. These structures are usually just as precious as fragile: remote sensing technology can be useful to monitor these treasures. In this work, we will focus on ground deformation measurements obtained by satellite SAR interferometry and on the methodology adopted and implemented in order to use the results operatively for conservation policies in a Italian archaeological site. The analysis is based on the processing of COSMO-SkyMed Himage data by the e-GEOS proprietary Persistent Scatterer Pair (PSP) SAR interferometry technology. The PSP technique is a proven SAR interferometry technology characterized by the fact of exploiting in the processing only the relative properties between close points (pairs) in order to overcome atmospheric artefacts (which are one of the main problems of SAR interferometry). Validations analyses [Costantini et al. 2015] settled that this technique applied to COSMO-SkyMed Himage data is able to retrieve very dense (except of course on vegetated or cultivated areas) millimetric deformation measurements with sub-metric localization. Considering the limitations of all the interferometric techniques, in particular the fact that the measurement are along the line of sight (LOS) and the geometric distortions, in order to obtain the maximum information from interferometric analysis, both ascending and descending geometry have been used. The ascending analysis allows selecting measurements points over the top and, approximately, South-West part of the structures, while the descending one over the top and the South-East part of the structures. The interferometric techniques needs

  13. Micrometer and CCD measurements of double stars (Series 51

    Popović G.M.

    1998-01-01

    Full Text Available 36 micrometric measurements of 20 double or multiple systems carried out with the Zeiss 65/1055 cm Refractor of Belgrade Observatory are communicated. Also 35 CCD measurements of 15 double or multiple systems are included.

  14. Experience in CCD Photometry at the Tartu Observatory

    Tuvikene T.

    2003-12-01

    Full Text Available We give overview of the CCD instrumentation and data reduction techniques used at the Tartu Observatory. The first results from photometric observations of the peculiar variable V838 Mon are presented.

  15. A GRAPH READER USING A CCD IMAGE SENSOR

    2008-01-18

    Jan 18, 2008 ... using a stepper motor controlled by a software program in a ... Keywords: CCD sensor, microcontrollen stepper motor and microcomputer. 1. ... commercial applications (Awcock and ... on-chip amplifier, one pixel at a tirtjie.

  16. Correlation and image compression for limited-bandwidth CCD.

    Thompson, Douglas G.

    2005-07-01

    As radars move to Unmanned Aerial Vehicles with limited-bandwidth data downlinks, the amount of data stored and transmitted with each image becomes more significant. This document gives the results of a study to determine the effect of lossy compression in the image magnitude and phase on Coherent Change Detection (CCD). We examine 44 lossy compression types, plus lossless zlib compression, and test each compression method with over 600 CCD image pairs. We also derive theoretical predictions for the correlation for most of these compression schemes, which compare favorably with the experimental results. We recommend image transmission formats for limited-bandwidth programs having various requirements for CCD, including programs which cannot allow performance degradation and those which have stricter bandwidth requirements at the expense of CCD performance.

  17. Ultralow-loss CMOS copper plasmonic waveguides

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

    2016-01-01

    with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  18. Latch-up in CMOS integrated circuits

    Estreich, D.B.; Dutton, R.W.

    1978-04-01

    An analysis is presented of latch-up in CMOS integrated circuits. A latch-up prediction algorithm has been developed and used to evaluate methods to control latch-up. Experimental verification of the algorithm is demonstrated

  19. Nanometer CMOS ICs from basics to ASICs

    J M Veendrick, Harry

    2017-01-01

    This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

  20. Follow-up study of children with cerebral coordination disturbance (CCD, Vojta).

    Imamura, S; Sakuma, K; Takahashi, T

    1983-01-01

    713 children (from newborn to 12-month-old) with delayed motor development were carefully examined and classified into normal, very light cerebral coordination disturbance (CCD, Vojta), light CCD, moderate CCD, severe CCD, suspected cerebral palsy (CP) and other diseases at their first visit, and were followed up carefully. Finally, 89.0% of very light CCD, 71.4% of light CCD, 56.0% of moderate CCD and 30.0% of severe CCD developed into normal. 59.5% of moderate CCD and 45.5% of severe CCD among children who were given Vojta's physiotherapy developed into normal. The classification of cases with delayed motor development into very light, light, moderate and severe CCD based on the extent of abnormality in their postural reflexes is useful and well correlated with their prognosis. Treatment by Vojta's method seems to be efficient and helpful for young children with delayed motor development.

  1. Combination of pneumococcal surface protein A (PspA with whole cell pertussis vaccine increases protection against pneumococcal challenge in mice.

    Maria Leonor S Oliveira

    Full Text Available Streptococcus pneumoniae is the leading cause of respiratory acute infections around the world. In Latin America, approximately 20,000 children under 5 years of age die of pneumococcal diseases annually. Pneumococcal surface protein A (PspA is among the best-characterized pneumococcal antigens that confer protection in animal models of pneumococcal infections and, as such, is a good alternative for the currently available conjugated vaccines. Efficient immune responses directed to PspA in animal models have already been described. Nevertheless, few low cost adjuvants for a subunit pneumococcal vaccine have been proposed to date. Here, we have tested the adjuvant properties of the whole cell Bordetella pertussis vaccine (wP that is currently part of the DTP (diphtheria-tetanus-pertussis vaccine administrated to children in several countries, as an adjuvant to PspA. Nasal immunization of BALB/c mice with a combination of PspA5 and wP or wP(low--a new generation vaccine that contains low levels of B. pertussis LPS--conferred protection against a respiratory lethal challenge with S. pneumoniae. Both PspA5-wP and PspA5-wP(low vaccines induced high levels of systemic and mucosal antibodies against PspA5, with similar profile, indicating no essential requirement for B. pertussis LPS in the adjuvant properties of wP. Accordingly, nasal immunization of C3H/HeJ mice with PspA5-wP conferred protection against the pneumococcal challenge, thus ruling out a role for TLR4 responses in the adjuvant activity and the protection mechanisms triggered by the vaccines. The high levels of anti-PspA5 antibodies correlated with increased cross-reactivity against PspAs from different clades and also reflected in cross-protection. In addition, passive immunization experiments indicated that antibodies played an important role in protection in this model. Finally, subcutaneous immunization with a combination of PspA5 with DTP(low protected mice against challenge with two

  2. Variationen und ihre Kompensation in CMOS Digitalschaltungen

    Baumann, Thomas

    2010-01-01

    Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

  3. Batch Processing of CMOS Compatible Feedthroughs

    Rasmussen, F.E.; Heschel, M.; Hansen, Ole

    2003-01-01

    . The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...... of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved....

  4. PSP-CBS with Dopamine Deficiency in a Female with a FMR1 Premutation.

    Paucar, Martin; Beniaminov, Stanislav; Paslawski, Wojciech; Svenningsson, Per

    2016-10-01

    Premutations in the fragile X mental retardation 1 (FMR1) gene cause fragile X-associated tremor/ataxia syndrome (FXTAS) and FMR1-related primary ovarian insufficiency (POI). Female FMR1 premutation carriers rarely develop motor features. Dual pathology is an emerging phenomenon among FMR1 premutation carriers. Here, we describe a family affected by FMR1-related disorders in which the female index case has developed a rapidly progressive and disabling syndrome of atypical parkinsonism. This syndrome consists of early onset postural instability, echolalia, dystonia, and varying types of apraxia like early onset orobuccal apraxia and oculomotor apraxia. She has also developed supranuclear gaze palsy, increased latency of saccade initiation, and slow saccades. These features are compatible with progressive supranuclear palsy (PSP) of a corticobasal syndrome (CBS) variant. Imaging displays a marked reduction of presynaptic dopaminergic uptake and cerebrospinal fluid analysis showed reduced dopamine metabolism; however, the patient is unresponsive to levodopa. Midbrain atrophy ("hummingbird sign") and mild cerebellar atrophy were found on brain MRI. Her father was affected by a typical FXTAS presentation but also displayed dopamine deficiency along with the hummingbird sign. The mechanisms by which FMR1 premutations predispose to atypical parkinsonism and dopamine deficiency await further elucidation.

  5. Nontypeable pneumococci can be divided into multiple cps types, including one type expressing the novel gene pspK.

    Park, In Ho; Kim, Kyung-Hyo; Andrade, Ana Lucia; Briles, David E; McDaniel, Larry S; Nahm, Moon H

    2012-01-01

    Although virulence of Streptococcus pneumoniae is associated with its capsule, some pathogenic S. pneumoniae isolates lack capsules and are serologically nontypeable (NT). We obtained 64 isolates that were identified as NT "pneumococci" (i.e., bacteria satisfying the conventional definition but without the multilocus sequence typing [MLST]-based definition of S. pneumoniae) by the traditional criteria. All 64 were optochin sensitive and had lytA, and 63 had ply. Twelve isolates had cpsA, suggesting the presence of a conventional but defective capsular polysaccharide synthesis (cps) locus. The 52 cpsA-negative isolates could be divided into three null capsule clades (NCC) based on aliC (aliB-like ORF1), aliD (aliB-like ORF2), and our newly discovered gene, pspK, in their cps loci. pspK encodes a protein with a long alpha-helical region containing an LPxTG motif and a YPT motif known to bind human pIgR. There were nine isolates in NCC1 (pspK(+) but negative for aliC and aliD), 32 isolates in NCC2 (aliC(+) aliD(+) but negative for pspK), and 11 in NCC3 (aliD(+) but negative for aliC and pspK). Among 52 cpsA-negative isolates, 41 were identified as S. pneumoniae by MLST analysis. All NCC1 and most NCC2 isolates were S. pneumoniae, whereas all nine NCC3 and two NCC2 isolates were not S. pneumoniae. Several NCC1 and NCC2 isolates from multiple individuals had identical MLST and cps regions, showing that unencapsulated S. pneumoniae can be infectious among humans. Furthermore, NCC1 and NCC2 S. pneumoniae isolates could colonize mice as well as encapsulated S. pneumoniae, although S. pneumoniae with an artificially disrupted cps locus did not. Moreover, an NCC1 isolate with pspK deletion did not colonize mice, suggesting that pspK is critical for colonization. Thus, PspK may provide pneumococci a means of surviving in the nasopharynx without capsule. IMPORTANCE The presence of a capsule is critical for many pathogenic bacteria, including pneumococci. Reflecting the

  6. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    Saffih, Faycal; Elshurafa, Amro M.; Mohammad, Mohammad Ali; Nelson-Fitzpatrick, Nathan E.; Evoy, S.

    2012-01-01

    . The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly

  7. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-11-15

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

  8. Immunomodulatory effects of herbal formula of astragalus polysaccharide (APS) and polysaccharopeptide (PSP) in mice with lung cancer.

    Zhou, Xing; Liu, Zijing; Long, Tingting; Zhou, Lijng; Bao, Yixi

    2018-01-01

    This study is to investigate the immunomodulatory effects of the herbal formula of astragalus polysaccharide (APS) and polysaccharopeptide (PSP) in mouse models of immunosuppression and lung cancer. Immune parameters were recorded for these model mice. Peripheral white blood cells (WBC) were detected with the automatic blood cell analyzer. Spleen and thymus indices, and tumor inhibition ratio were obtained. Percentage of peripheral blood CD4 + and CD8 + T lymphocytes were detected by flow cytometry. Serum levels of Th1 (IL-2, TNF, and IFN-γ), Th2 (IL-4, IL-6, and IL-10), and Th17 (IL-17A) were detected with the BD cytometric bead array (CBA) mouseTh1/Th2/Th17 cytokine kit. Compared with the NS group, the PSP and APS herbal formula significantly improved the WBC, thymus index, spleen index, CD4 + /CD8 + ratio, TNF, IFN-γ, IL-2, andIL-17Ainimmunosuppressivemice and lung cancer mice (PAPS herbal formula group (PAPS herbal formula group induced comparable tumor inhibiting effect with the AMD group (23.3% and 24.1%, respectively). The PSP+APS herbal formula have immunomodulatory effects and anti-tumor activity in mice with of lung cancer. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Neutron absorbed dose in a pacemaker CMOS

    Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-11-15

    The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

  10. Advanced microlens and color filter process technology for the high-efficiency CMOS and CCD image sensors

    Fan, Yang-Tung; Peng, Chiou-Shian; Chu, Cheng-Yu

    2000-12-01

    New markets are emerging for digital electronic image device, especially in visual communications, PC camera, mobile/cell phone, security system, toys, vehicle image system and computer peripherals for document capture. To enable one-chip image system that image sensor is with a full digital interface, can make image capture devices in our daily lives. Adding a color filter to such image sensor in a pattern of mosaics pixel or wide stripes can make image more real and colorful. We can say 'color filter makes the life more colorful color filter is? Color filter means can filter image light source except the color with specific wavelength and transmittance that is same as color filter itself. Color filter process is coating and patterning green, red and blue (or cyan, magenta and yellow) mosaic resists onto matched pixel in image sensing array pixels. According to the signal caught from each pixel, we can figure out the environment image picture. Widely use of digital electronic camera and multimedia applications today makes the feature of color filter becoming bright. Although it has challenge but it is very worthy to develop the process of color filter. We provide the best service on shorter cycle time, excellent color quality, high and stable yield. The key issues of advanced color process have to be solved and implemented are planarization and micro-lens technology. Lost of key points of color filter process technology have to consider will also be described in this paper.

  11. Familias de la proteína de superficie PspA de Streptococcus pneumoniae: Relación con serotipos y localización Pneumococcal surface protein A (PspA families: Relation with serotypes and clinical site of infection

    Clara Mayoral

    2010-10-01

    Full Text Available PspA, proteína de superficie de Streptococcus pneumoniae es un factor de virulencia, fuertemente inmunogénica y común a todos los serotipos. Aunque el gen que codifica para esta proteína presenta una marcada heterogeneidad en la región correspondiente al N-terminal, la PspA contiene epitopes conservados de manera tal que la inmunización genera protección contra neumococos pertenecientes a diversos tipos capsulares y con distintas PspA. A pesar del marcado polimorfismo del gen pspA es posible agrupar las distintas variantes en 3 familias mayoritarias. Estas propiedades las convierten en candidatas ideales para elaborar vacunas. Debido a que la mayoría de los trabajos sobre identificación de familias fueron realizados sobre serotipos frecuentes en otros países, el objetivo fue identificar las familias de PspA de aislamientos de pacientes de nuestra región y relacionarlas con los serotipos prevalentes y patologías. Se estudiaron 70 aislamientos, provenientes de niños con infecciones invasoras. Se aplicó una PCR utilizando cebadores específicos de cada familia. El 60% fueron familia 1 y 34% familia 2. En un 6% no se identificó ninguna de las familias de PspA. Los serotipos 1 y 5 presentaron familia 1 únicamente; los serotipos 14, 6B, 19F y 18C mostraron genes de ambas familias. La familia 1 se observó en 60% de las neumonías y 50% de las meningitis. La familia 2 en 33% de neumonías y 50% de meningitis. Esta información podría ser un valioso aporte para la formulación de una vacuna regional efectiva utilizando PspA recombinante como inmunógeno.PspA, a pneumococcal surface protein, is highly immunogenic and common to all serotypes. Although pspA gene shows a great heterogeneity at the N-terminal region, PspA protein has conserved epytopes which are able to elicit protective cross-reaction against various serotypes presenting different PspA. In spite of the high polimorfism of the PspA, three majority families can be identified

  12. CCD Astrophotography High-Quality Imaging from the Suburbs

    Stuart, Adam

    2006-01-01

    This is a reference book for amateur astronomers who have become interested in CCD imaging. Those glorious astronomical images found in astronomy magazines might seem out of reach to newcomers to CCD imaging, but this is not the case. Great pictures are attainable with modest equipment. Adam Stuart’s many beautiful images, reproduced in this book, attest to the quality of – initially – a beginner’s efforts. Chilled-chip astronomical CCD-cameras and software are also wonderful tools for cutting through seemingly impenetrable light-pollution. CCD Astrophotography from the Suburbs describes one man’s successful approach to the problem of getting high-quality astronomical images under some of the most light-polluted conditions. Here is a complete and thoroughly tested program that will help every CCD-beginner to work towards digital imaging of the highest quality. It is equally useful to astronomers who have perfect observing conditions, as to those who have to observe from light-polluted city skies.

  13. Purification and crystallization of Vibrio fischeri CcdB and its complexes with fragments of gyrase and CcdA

    De Jonge, Natalie, E-mail: ndejonge@vub.ac.be; Buts, Lieven; Vangelooven, Joris [Department of Molecular and Cellular Interactions, VIB, Pleinlaan 2, 1050 Brussels (Belgium); Laboratorium voor Ultrastructuur, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels (Belgium); Mine, Natacha; Van Melderen, Laurence [Laboratoire de Génétique des Procaryotes, Institut de Biologie et de Médecine, Université Libre de Bruxelles, Gosselies (Belgium); Wyns, Lode; Loris, Remy [Department of Molecular and Cellular Interactions, VIB, Pleinlaan 2, 1050 Brussels (Belgium); Laboratorium voor Ultrastructuur, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels (Belgium)

    2007-04-01

    A CcdB homologue from V. fischeri was overexpressed in E. coli and purified. The free protein was crystallized, as were its complexes with fragments of E. coli and V. fischeri gyrase and with the F-plasmid CcdA C-terminal domain. The ccd toxin–antitoxin module from the Escherichia coli F plasmid has a homologue on the Vibrio fischeri integron. The homologue of the toxin (CcdB{sub Vfi}) was crystallized in two different crystal forms. The first form belongs to space group I23 or I2{sub 1}3, with unit-cell parameter a = 84.5 Å, and diffracts to 1.5 Å resolution. The second crystal form belongs to space group C2, with unit-cell parameters a = 58.5, b = 43.6, c = 37.5 Å, β = 110.0°, and diffracts to 1.7 Å resolution. The complex of CcdB{sub Vfi} with the GyrA14{sub Vfi} fragment of V. fischeri gyrase crystallizes in space group P2{sub 1}2{sub 1}2{sub 1}, with unit-cell parameters a = 53.5, b = 94.6, c = 58.1 Å, and diffracts to 2.2 Å resolution. The corresponding mixed complex with E. coli GyrA14{sub Ec} crystallizes in space group C2, with unit-cell parameters a = 130.1, b = 90.8, c = 58.1 Å, β = 102.6°, and diffracts to 1.95 Å. Finally, a complex between CcdB{sub Vfi} and part of the F-plasmid antitoxin CcdA{sub F} crystallizes in space group P2{sub 1}2{sub 1}2{sub 1}, with unit-cell parameters a = 46.9, b = 62.6, c = 82.0 Å, and diffracts to 1.9 Å resolution.

  14. Purification and crystallization of Vibrio fischeri CcdB and its complexes with fragments of gyrase and CcdA

    De Jonge, Natalie; Buts, Lieven; Vangelooven, Joris; Mine, Natacha; Van Melderen, Laurence; Wyns, Lode; Loris, Remy

    2007-01-01

    A CcdB homologue from V. fischeri was overexpressed in E. coli and purified. The free protein was crystallized, as were its complexes with fragments of E. coli and V. fischeri gyrase and with the F-plasmid CcdA C-terminal domain. The ccd toxin–antitoxin module from the Escherichia coli F plasmid has a homologue on the Vibrio fischeri integron. The homologue of the toxin (CcdB Vfi ) was crystallized in two different crystal forms. The first form belongs to space group I23 or I2 1 3, with unit-cell parameter a = 84.5 Å, and diffracts to 1.5 Å resolution. The second crystal form belongs to space group C2, with unit-cell parameters a = 58.5, b = 43.6, c = 37.5 Å, β = 110.0°, and diffracts to 1.7 Å resolution. The complex of CcdB Vfi with the GyrA14 Vfi fragment of V. fischeri gyrase crystallizes in space group P2 1 2 1 2 1 , with unit-cell parameters a = 53.5, b = 94.6, c = 58.1 Å, and diffracts to 2.2 Å resolution. The corresponding mixed complex with E. coli GyrA14 Ec crystallizes in space group C2, with unit-cell parameters a = 130.1, b = 90.8, c = 58.1 Å, β = 102.6°, and diffracts to 1.95 Å. Finally, a complex between CcdB Vfi and part of the F-plasmid antitoxin CcdA F crystallizes in space group P2 1 2 1 2 1 , with unit-cell parameters a = 46.9, b = 62.6, c = 82.0 Å, and diffracts to 1.9 Å resolution

  15. Decal electronics for printed high performance cmos electronic systems

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  16. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  17. [18F]FDDNP PET in Tauopathies: Correlation to post mortem Pathology in a Case of Progressive Supranuclear Palsy (PSP)

    Villegas, Brendon Josef

    This investigation of [18F]FDDNP was conducted in an effort to confirm the presence of disease in a patient with Progressive Supranuclear Palsy (PSP) and to correlate the ante mortem PET scan results to the post mortem pathology. The immunohistochemical and immunofluorescent staining of Paired Helical Filamentous (PHF) tau (AT8) and Amyloid Beta (6F/3D) misfolded proteins demonstrated a widespread deposition in the cortical and subcortical nuclei, the white matter, cerebellar white matter and the medulla oblongata. The in vitro autoradiography demonstrated a neocortical signal comprised of well-delineated amyloid beta in the nucleated layers I/II and hyperphosphorylated tau in the deeper layers III through VI. The autoradiography was well correlated with the immunohistochemical staining in adjacent tissue slides. The binding of the parametric [ 18F]FDDNP distribution volume ratio (DVR) correlated well (Spearman's rho = 0.962, p = .004) with the deposition of tau but not with the presence of amyloid beta (Spearman's rho = -0.829, p = .041). The [ 18F]FDDNP DVR signal appears to be primarily due to the large amount of bound hyperphosphorylated tau (p-tau) and the amyloid beta negligibly contributes to the total signal. Unlabeled FDDNP was shown to bind to tau in the form of globose tangles in the rostral ventromedial medulla as confirmed with both Thioflavin S and PHF-tau Immunofluorescence. The binding of [18F]FDDNP to the human neuroanatomy was investigated in two cohorts of distinct tauopathies and compared to the binding in two tau-negative cohorts against control patients. A cohort of PSP patients (n = 12) with a mean age of 63.8 years and a cohort of Chronic Traumatic Encephalopathy (CTE) patients (n = 14) with a mean age of 58.1 years are both characterized by the presence of various degrees of tau pathology in their brains. The cohort of Parkinson's Disease (PD) patients (n = 16) with a mean age of 63.2 years is initially characterized by clinical symptoms

  18. Noise analysis for CCD-based ultraviolet and visible spectrophotometry.

    Davenport, John J; Hodgkinson, Jane; Saffell, John R; Tatam, Ralph P

    2015-09-20

    We present the results of a detailed analysis of the noise behavior of two CCD spectrometers in common use, an AvaSpec-3648 CCD UV spectrometer and an Ocean Optics S2000 Vis spectrometer. Light sources used include a deuterium UV/Vis lamp and UV and visible LEDs. Common noise phenomena include source fluctuation noise, photoresponse nonuniformity, dark current noise, fixed pattern noise, and read noise. These were identified and characterized by varying light source, spectrometer settings, or temperature. A number of noise-limiting techniques are proposed, demonstrating a best-case spectroscopic noise equivalent absorbance of 3.5×10(-4)  AU for the AvaSpec-3648 and 5.6×10(-4)  AU for the Ocean Optics S2000 over a 30 s integration period. These techniques can be used on other CCD spectrometers to optimize performance.

  19. Investigation of radiation damage effects in neutron irradiated CCD

    Brau, James E.; Igonkina, Olga; Potter, Chris T.; Sinev, Nikolai B.

    2005-01-01

    A Charge Coupled Devices (CCD)-based vertex detector is a leading option for vertex detection at the future linear collider. A major issue for this application is the radiation hardness of such devices. Tests of radiation hardness of CCDs used in the SLD vertex detector, VXD3, have been reported earlier. The first measurements of 1998 involved a spare VXD3 CCD that was irradiated with neutrons from a radioactive source (Pu-Be), and from a nuclear reactor. In 2003, we had the opportunity to disassemble the VXD3 detector and study the nature of the radiation damage it incurred during 3 years of operation at SLC. In the preparation for this study, additional experiments with the spare VXD3 CCD were performed. These included measurements of trapping times in neutron irradiated CCDs. Results, reported here, will help us better understand the mechanism of radiation damage effects and develop techniques to minimize performance degradation due to radiation damage

  20. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  1. A Standard CMOS Humidity Sensor without Post-Processing

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  2. CCD image sensor induced error in PIV applications

    Legrand, M.; Nogueira, J.; Vargas, A. A.; Ventas, R.; Rodríguez-Hidalgo, M. C.

    2014-06-01

    The readout procedure of charge-coupled device (CCD) cameras is known to generate some image degradation in different scientific imaging fields, especially in astrophysics. In the particular field of particle image velocimetry (PIV), widely extended in the scientific community, the readout procedure of the interline CCD sensor induces a bias in the registered position of particle images. This work proposes simple procedures to predict the magnitude of the associated measurement error. Generally, there are differences in the position bias for the different images of a certain particle at each PIV frame. This leads to a substantial bias error in the PIV velocity measurement (˜0.1 pixels). This is the order of magnitude that other typical PIV errors such as peak-locking may reach. Based on modern CCD technology and architecture, this work offers a description of the readout phenomenon and proposes a modeling for the CCD readout bias error magnitude. This bias, in turn, generates a velocity measurement bias error when there is an illumination difference between two successive PIV exposures. The model predictions match the experiments performed with two 12-bit-depth interline CCD cameras (MegaPlus ES 4.0/E incorporating the Kodak KAI-4000M CCD sensor with 4 megapixels). For different cameras, only two constant values are needed to fit the proposed calibration model and predict the error from the readout procedure. Tests by different researchers using different cameras would allow verification of the model, that can be used to optimize acquisition setups. Simple procedures to obtain these two calibration values are also described.

  3. CCD image sensor induced error in PIV applications

    Legrand, M; Nogueira, J; Vargas, A A; Ventas, R; Rodríguez-Hidalgo, M C

    2014-01-01

    The readout procedure of charge-coupled device (CCD) cameras is known to generate some image degradation in different scientific imaging fields, especially in astrophysics. In the particular field of particle image velocimetry (PIV), widely extended in the scientific community, the readout procedure of the interline CCD sensor induces a bias in the registered position of particle images. This work proposes simple procedures to predict the magnitude of the associated measurement error. Generally, there are differences in the position bias for the different images of a certain particle at each PIV frame. This leads to a substantial bias error in the PIV velocity measurement (∼0.1 pixels). This is the order of magnitude that other typical PIV errors such as peak-locking may reach. Based on modern CCD technology and architecture, this work offers a description of the readout phenomenon and proposes a modeling for the CCD readout bias error magnitude. This bias, in turn, generates a velocity measurement bias error when there is an illumination difference between two successive PIV exposures. The model predictions match the experiments performed with two 12-bit-depth interline CCD cameras (MegaPlus ES 4.0/E incorporating the Kodak KAI-4000M CCD sensor with 4 megapixels). For different cameras, only two constant values are needed to fit the proposed calibration model and predict the error from the readout procedure. Tests by different researchers using different cameras would allow verification of the model, that can be used to optimize acquisition setups. Simple procedures to obtain these two calibration values are also described. (paper)

  4. Technology CAD for germanium CMOS circuit

    Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

    2006-12-15

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

  5. Technology CAD for germanium CMOS circuit

    Saha, A.R.; Maiti, C.K.

    2006-01-01

    Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

  6. Ion traps fabricated in a CMOS foundry

    Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2014-07-28

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  7. Stroboscope Based Synchronization of Full Frame CCD Sensors.

    Shen, Liang; Feng, Xiaobing; Zhang, Yuan; Shi, Min; Zhu, Dengming; Wang, Zhaoqi

    2017-04-07

    The key obstacle to the use of consumer cameras in computer vision and computer graphics applications is the lack of synchronization hardware. We present a stroboscope based synchronization approach for the charge-coupled device (CCD) consumer cameras. The synchronization is realized by first aligning the frames from different video sequences based on the smear dots of the stroboscope, and then matching the sequences using a hidden Markov model. Compared with current synchronized capture equipment, the proposed approach greatly reduces the cost by using inexpensive CCD cameras and one stroboscope. The results show that our method could reach a high accuracy much better than the frame-level synchronization of traditional software methods.

  8. Digital Printing Quality Detection and Analysis Technology Based on CCD

    He, Ming; Zheng, Liping

    2017-12-01

    With the help of CCD digital printing quality detection and analysis technology, it can carry out rapid evaluation and objective detection of printing quality, and can play a certain control effect on printing quality. It can be said CDD digital printing quality testing and analysis of the rational application of technology, its digital printing and printing materials for a variety of printing equipments to improve the quality of a very positive role. In this paper, we do an in-depth study and discussion based on the CCD digital print quality testing and analysis technology.

  9. Meteor Film Recording with Digital Film Cameras with large CMOS Sensors

    Slansky, P. C.

    2016-12-01

    In this article the author combines his professional know-how about cameras for film and television production with his amateur astronomy activities. Professional digital film cameras with high sensitivity are still quite rare in astronomy. One reason for this may be their costs of up to 20 000 and more (camera body only). In the interim, however,consumer photo cameras with film mode and very high sensitivity have come to the market for about 2 000 EUR. In addition, ultra-high sensitive professional film cameras, that are very interesting for meteor observation, have been introduced to the market. The particular benefits of digital film cameras with large CMOS sensors, including photo cameras with film recording function, for meteor recording are presented by three examples: a 2014 Camelopardalid, shot with a Canon EOS C 300, an exploding 2014 Aurigid, shot with a Sony alpha7S, and the 2016 Perseids, shot with a Canon ME20F-SH. All three cameras use large CMOS sensors; "large" meaning Super-35 mm, the classic 35 mm film format (24x13.5 mm, similar to APS-C size), or full format (36x24 mm), the classic 135 photo camera format. Comparisons are made to the widely used cameras with small CCD sensors, such as Mintron or Watec; "small" meaning 12" (6.4x4.8 mm) or less. Additionally, special photographic image processing of meteor film recordings is discussed.

  10. Development of a thinned back-illuminated CMOS active pixel sensor for extreme ultraviolet spectroscopy and imaging in space science

    Waltham, N.R.; Prydderch, M.; Mapson-Menard, H.; Pool, P.; Harris, A.

    2007-01-01

    We describe our programme to develop a large-format, science-grade, monolithic CMOS active pixel sensor for future space science missions, and in particular an extreme ultraviolet (EUV) spectrograph for solar physics studies on ESA's Solar Orbiter. Our route to EUV sensitivity relies on adapting the back-thinning and rear-illumination techniques first developed for CCD sensors. Our first large-format sensor consists of 4kx3k 5 μm pixels fabricated on a 0.25 μm CMOS imager process. Wafer samples of these sensors have been thinned by e2v technologies with the aim of obtaining good sensitivity at EUV wavelengths. We present results from both front- and back-illuminated versions of this sensor. We also present our plans to develop a new sensor of 2kx2k 10 μm pixels, which will be fabricated on a 0.35 μm CMOS process. In progress towards this goal, we have designed a test-structure consisting of six arrays of 512x512 10 μm pixels. Each of the arrays has been given a different pixel design to allow verification of our models, and our progress towards optimizing a design for minimal system readout noise and maximum dynamic range. These sensors will also be back-thinned for characterization at EUV wavelengths

  11. CMOS circuit design, layout and simulation

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  12. CMOS Compressed Imaging by Random Convolution

    Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

    2009-01-01

    We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

  13. Integrated 60GHz RF beamforming in CMOS

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  14. Challenges & Roadmap for Beyond CMOS Computing Simulation.

    Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

  15. Radiation-hardened bulk CMOS technology

    Dawes, W.R. Jr.; Habing, D.H.

    1979-01-01

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  16. Familias de la proteína de superficie PspA de Streptococcus pneumoniae: Relación con serotipos y localización

    Clara Mayoral

    2010-10-01

    Full Text Available PspA, proteína de superficie de Streptococcus pneumoniae es un factor de virulencia, fuertemente inmunogénica y común a todos los serotipos. Aunque el gen que codifica para esta proteína presenta una marcada heterogeneidad en la región correspondiente al N-terminal, la PspA contiene epitopes conservados de manera tal que la inmunización genera protección contra neumococos pertenecientes a diversos tipos capsulares y con distintas PspA. A pesar del marcado polimorfismo del gen pspA es posible agrupar las distintas variantes en 3 familias mayoritarias. Estas propiedades las convierten en candidatas ideales para elaborar vacunas. Debido a que la mayoría de los trabajos sobre identificación de familias fueron realizados sobre serotipos frecuentes en otros países, el objetivo fue identificar las familias de PspA de aislamientos de pacientes de nuestra región y relacionarlas con los serotipos prevalentes y patologías. Se estudiaron 70 aislamientos, provenientes de niños con infecciones invasoras. Se aplicó una PCR utilizando cebadores específicos de cada familia. El 60% fueron familia 1 y 34% familia 2. En un 6% no se identificó ninguna de las familias de PspA. Los serotipos 1 y 5 presentaron familia 1 únicamente; los serotipos 14, 6B, 19F y 18C mostraron genes de ambas familias. La familia 1 se observó en 60% de las neumonías y 50% de las meningitis. La familia 2 en 33% de neumonías y 50% de meningitis. Esta información podría ser un valioso aporte para la formulación de una vacuna regional efectiva utilizando PspA recombinante como inmunógeno.

  17. A comparative study for PSP toxins quantification by using MBA and HPLC official methods in shellfish.

    Ben-Gigirey, B; Rodríguez-Velasco, M L; Otero, A; Vieites, J M; Cabado, A G

    2012-10-01

    Commission Regulation (EC) N° 2074/2005 recognises the biological method as the reference method for Paralytic Shellfish Poisoning (PSP) toxins detection in molluscs. It was amended by Commission Regulation (EC) N° 1664/2006 that accepted the so-called Lawrence method as an alternative to the reference method. The goal of this study was to compare AOAC Official Methods of Analysis 959.08 (Biological method) and 2005.06 (Prechromatographic Oxidation and Liquid Chromatography with fluorescence detection) in samples with different toxin profiles. The influence of extraction solvent in the total samples toxicity was also evaluated. A total of 40 samples including mussels, clams, scallops, razor-clams, cockles, oysters and barnacles were analysed by both official methods. Samples were selected with Alexandrium and Gymnodinium toxic profiles, from different origin and including several presentations: fresh, frozen, canned and boiled. Acetic and hydrochloric acid extractions were performed in all samples and the extracts were simultaneously analysed by both methods. Most samples were naturally contaminated and two samples were spiked. Comparison of both official methods, mouse bioassay (MBA) with HCl extraction and Liquid Chromatography with fluorescence detection (HPLC-FLD) with acetic acid extraction, led to an 85% of consistent results regarding compliance with legal limit, including samples below and above it. The linear correlation coefficient was r² = 0.69 and the paired t test (two tails, α = 0.05) indicated that there were not significant differences among both sets of data. Nevertheless, toxicity differences were found in several samples. In 15 out of 18 shellfish with a Gymnodinium toxic profile, higher toxicity levels were obtained by MBA. This fact was more evident in 7 samples, partially related to the lack of standards and the impossibility of analysing dc-NEO, C1, 2 and GTX6 at the beginning of the study. However, other factors concerning the extraction

  18. Calibration of the CCD photonic measuring system for railway inspection

    Popov, D. V.; Ryabichenko, R. B.; Krivosheina, E. A.

    2005-08-01

    Increasing of traffic speed is the most important task in Moscow Metro. Requirements for traffic safety grow up simultaneously with the speed increasing. Currently for track inspection in Moscow Metro is used track measurement car has built in 1954. The main drawbacks of this system are absence of automated data processing and low accuracy. Non-contact photonic measurement system (KSIR) is developed for solving this problem. New track inspection car will be built in several months. This car will use two different track inspection systems and car locating subsystem based on track circuit counting. The KSIR consists of four subsystems: rail wear, height and track gauge measurement (BFSM); rail slump measurement (FIP); contact rail measurement (FKR); speed, level and car locating (USI). Currently new subsystem for wheel flange wear (IRK) is developed. The KSIR carry out measurements in real-time mode. The BFSM subsystem contains 4 matrix CCD cameras and 4 infrared stripe illuminators. The FIP subsystem contains 4 line CCD cameras and 4 spot illuminators. The FKR subsystem contains 2 matrix CCD cameras and 2 stripe illuminators. The IRK subsystem contains 2 CCD cameras and 2 stripe illuminators. Each system calibration was carried out for their adjustment. On the first step KSIR obtains data from photonic sensors which is valued in internal measurement units. Due to the calibration on the second step non-contact system converts the data to metric measurement system.

  19. Development of CCD Imaging System Using Thermoelectric Cooling Method

    Youngsik Park

    2000-06-01

    Full Text Available We developed low light CCD imaging system using thermoelectric cooling method collaboration with a company to design a commercial model. It consists of Kodak KAF-0401E (768x512 pixels CCD chip,thermoelectric module manufactured by Thermotek. This TEC system can reach an operative temperature of -25deg. We employed an Uniblitz VS25S shutter and it has capability a minimum exposure time 80ms. The system components are an interface card using a Korea Astronomy Observatory (hereafter KAO ISA bus controller, image acquisition with AD9816 chip, that is 12bit video processor. The performance test with this imaging system showed good operation within the initial specification of our design. It shows a dark current less than 0.4e-/pixel/sec at a temperature of -10deg, a linearity 99.9+/-0.1%, gain 4.24e-adu, and system noise is 25.3e- (rms. For low temperature CCD operation, we designed a TEC, which uses a one-stage peltier module and forced air heat exchanger. This TEC imaging system enables accurate photometry (+/-0.01mag even though the CCD is not at 'conventional' cryogenic temperatures (140K. The system can be a useful instrument for any other imaging applications. Finally, with this system, we obtained several images of astronomical objects for system performance tests.

  20. A CCD portrait of Comet P/Tempel 2

    Jewitt, D.; Luu, J.

    1989-01-01

    The development of activity in Comet P/Tempel 2 is studied from aphelion (R = 4 AU) to perihelion (R = 1.4 AU) using extensive time-series CCD photometry and CCD spectra. The comet undergoes a profound morphological change at R of about 2-2.5 AU, from a bare nucleus at larger distances to an active comet supporting a coma of gas and dust. Cyclic photometric variations with the period T = 8.95 + or - 0.01 hr. are present at all R, and are attributed to the rotation of the nucleus at this period. The nucleus is prolate (axes a:b:c = 1.9:1:1), a property shared with other nuclei studied using CCD photometry. Novel results include a limit on the bulk density of the nucleus, rho above 300 kg/cu m, and a 20-A-resolution CCD spectrum of the nucleus. Spatially and temporally resolved photometry is used to study the effects of nucleus rotation on the coma. The coma does not share the dramatic photometric variations shown by the nucleus. It possesses a steep surface-brightness distribution, which is attributable to progressive destruction of the coma grains with increasing space exposure. 41 refs

  1. The possibilities of CCD photometry of optical afterglows of GRBs

    Šimon, Vojtěch; Polášek, Cyril; Jelínek, M.; Hudec, René; Štrobl, Jan

    -, č. 125 (2010), s. 24-28 ISSN 1801-5964. [Conference on Variable Stars Research /41./. Prague, 27.11.2009-29.11.2009] Institutional research plan: CEZ:AV0Z10030501 Keywords : gamma-ray bursts * optical afterglows * CCD photometry Subject RIV: BN - Astronomy, Celestial Mechanics, Astrophysics

  2. Flatfielding Errors in Strömvil CCD Photometry

    Boyle R. P.

    2003-12-01

    Full Text Available The importance of determining the error of the flat field in CCD photometry is detailed and our methods of doing this are described. We now have reached a precision of 1-1.5 % in our photometry. Color-magnitude diagrams of the open cluster M67 (ours and Laugalys et al. 2003 are compared.

  3. BVRI CCD photometry of the globular cluster NGC 2808

    Alcaino, G.; Liller, W.; Alvarado, F.; Wenderoth, E.

    1990-01-01

    As a part of a continuing program, CCD color-magnitude diagrams are presented for the bright globular cluster NGC 2808 in the four colors comprising BVRI. From a comparison of four different CMDs with theoretical isochrones, an age of 16 + or - 2 Gyr is obtained, assuming a value for Fe/H near -1.3. 28 refs

  4. Research of optical coherence tomography microscope based on CCD detector

    Zhang, Hua; Xu, Zhongbao; Zhang, Shuomo

    2008-12-01

    The reference wave phase was modulated with a sinusoidal vibrating mirror attached to a Piezoelectric Transducer (PZT), the integration was performed by a CCD, and the charge storage period of the CCD image sensor was one-quarter period of the sinusoidal phase modulation. With the frequency- synchronous detection technique, four images (four frames of interference pattern) were recorded during one period of the phase modulation. In order to obtain the optimum modulation parameter, the values of amplitude and phase of the sinusoidal phase modulation were determined by considering the measurement error caused by the additive noise contained in the detected values. The PZT oscillation was controlled by a closed loop control system based on PID controller. An ideal discrete digital sine function at 50Hz with adjustable amplitude was used to adjust the vibrating of PZT, and a digital phase shift techniques was used to adjust vibrating phase of PZT so that the phase of the modulation could reach their optimum values. The CCD detector was triggered with software at 200Hz. Based on work above a small coherent signal masked by the preponderant incoherent background with a CCD detector was obtained.

  5. Technical challenges and recent progress in CCD imagers

    Bosiers, Jan T.; Peters, Inge M.; Draijer, Cees; Theuwissen, Albert

    2006-01-01

    This paper gives a review of the performance of charge-coupled device (CCD) imagers for use in consumer, professional and scientific applications. An overview of recent developments and the current state-of-the-art are presented. An extensive list of references is included

  6. A data-acquisition system for high speed linear CCD

    Liu Zhiyan; Chen Xiangcai; Jiang Xiaoshan; Zhang Hongyu; Liang Zhongwang; Xiang Haisheng; Hu Jun

    2010-01-01

    A data-acquisition system for high speed linear CCD (Charge Coupled device) is mainly introduced. The optical fiber transmission technology is used. The data is sent to PC through USB or PCI interface. The construction of the system, the design of the PCI interface hardware, software design and the design of the control program running on host computer are also introduced. (authors)

  7. CCD photometry of apparent dwarf galaxies in Fornax

    Phillipps, S.; Grimley, P.L.; Disney, M.J.; Cawson, M.G.M.; Kibblewhite, E.J.

    1986-01-01

    Blue and red CCD surface photometry of two apparent dwarf galaxies in the Fornax cluster region is presented. Luminosity profiles are derived and their form discussed. The fainter galaxy resembles an archetypal diffuse dwarf elliptical but the brighter of the pair is either an unusual red dwarf or a background galaxy in chance juxtaposition. (author)

  8. Measurements of 42 Wide CPM Pairs with a CCD

    Harshaw, Richard

    2015-11-01

    This paper addresses the use of a Skyris 618C color CCD camera as a means of obtaining data for analysis in the measurement of wide common proper motion stars. The equipment setup is described and data collection procedure outlined. Results of the measures of 42 CPM stars are presented, showing the Skyris is a reliable device for the measurement of double stars.

  9. Single-photon sensitive fast ebCMOS camera system for multiple-target tracking of single fluorophores: application to nano-biophotonics

    Cajgfinger, Thomas; Chabanat, Eric; Dominjon, Agnes; Doan, Quang T.; Guerin, Cyrille; Houles, Julien; Barbier, Remi

    2011-03-01

    Nano-biophotonics applications will benefit from new fluorescent microscopy methods based essentially on super-resolution techniques (beyond the diffraction limit) on large biological structures (membranes) with fast frame rate (1000 Hz). This trend tends to push the photon detectors to the single-photon counting regime and the camera acquisition system to real time dynamic multiple-target tracing. The LUSIPHER prototype presented in this paper aims to give a different approach than those of Electron Multiplied CCD (EMCCD) technology and try to answer to the stringent demands of the new nano-biophotonics imaging techniques. The electron bombarded CMOS (ebCMOS) device has the potential to respond to this challenge, thanks to the linear gain of the accelerating high voltage of the photo-cathode, to the possible ultra fast frame rate of CMOS sensors and to the single-photon sensitivity. We produced a camera system based on a 640 kPixels ebCMOS with its acquisition system. The proof of concept for single-photon based tracking for multiple single-emitters is the main result of this paper.

  10. Ultrahigh sensitivity endoscopic camera using a new CMOS image sensor: providing with clear images under low illumination in addition to fluorescent images.

    Aoki, Hisae; Yamashita, Hiromasa; Mori, Toshiyuki; Fukuyo, Tsuneo; Chiba, Toshio

    2014-11-01

    We developed a new ultrahigh-sensitive CMOS camera using a specific sensor that has a wide range of spectral sensitivity characteristics. The objective of this study is to present our updated endoscopic technology that has successfully integrated two innovative functions; ultrasensitive imaging as well as advanced fluorescent viewing. Two different experiments were conducted. One was carried out to evaluate the function of the ultrahigh-sensitive camera. The other was to test the availability of the newly developed sensor and its performance as a fluorescence endoscope. In both studies, the distance from the endoscopic tip to the target was varied and those endoscopic images in each setting were taken for further comparison. In the first experiment, the 3-CCD camera failed to display the clear images under low illumination, and the target was hardly seen. In contrast, the CMOS camera was able to display the targets regardless of the camera-target distance under low illumination. Under high illumination, imaging quality given by both cameras was quite alike. In the second experiment as a fluorescence endoscope, the CMOS camera was capable of clearly showing the fluorescent-activated organs. The ultrahigh sensitivity CMOS HD endoscopic camera is expected to provide us with clear images under low illumination in addition to the fluorescent images under high illumination in the field of laparoscopic surgery.

  11. On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

    Hongyi Mi

    2017-03-01

    Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

  12. Low noise monolithic CMOS front end electronics

    Lutz, G.; Bergmann, H.; Holl, P.; Manfredi, P.F.

    1987-01-01

    Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

  13. CMOS VHF transconductance-C lowpass filter

    Nauta, Bram

    1990-01-01

    Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

  14. CMOS switched current phase-locked loop

    Leenaerts, D.M.W.; Persoon, G.G.; Putter, B.M.

    1997-01-01

    The authors present an integrated circuit realisation of a switched current phase-locked loop (PLL) in standard 2.4 µm CMOS technology. The centre frequency is tunable to 1 MHz at a clock frequency of 5.46 MHz. The PLL has a measured maximum phase error of 21 degrees. The chip consumes

  15. RF Circuit Design in Nanometer CMOS

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  16. CMOS digital integrated circuits a first course

    Hawkins, Charles; Zarkesh-Ha, Payman

    2016-01-01

    This book teaches the fundamentals of modern CMOS technology and covers equal treatment to both types of MOSFET transistors that make up computer circuits; power properties of logic circuits; physical and electrical properties of metals; introduction of timing circuit electronics and introduction of layout; real-world examples and problem sets.

  17. A 24GHz Radar Receiver in CMOS

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  18. Toward CMOS image sensor based glucose monitoring.

    Devadhasan, Jasmine Pramila; Kim, Sanghyo

    2012-09-07

    Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

  19. Fully CMOS-compatible titanium nitride nanoantennas

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  20. A large area cooled-CCD detector for electron microscopy

    Faruqi, A.R.; Andrews, H.N.; Raeburn, C.

    1994-01-01

    Large area cooled-CCDs are an excellent medium for (indirectly) recording electron images and electron diffraction patterns in real time and for use in electron tomography; real-time imaging is extremely useful in making rapid adjustments in the electron microscope. CCDs provide high sensitivity (useful for minimising dosage to radiation-sensitive biological specimen), good resolution, stable performance, excellent dynamic range and linearity and a reasonably fast readout.We have built an electron imaging device based on the EEV 1152 by 814 pixel CCD which is controlled from a unix based SUN Sparcstation operating under X-Windows. The incident 100 kV electrons are converted to visible light in a 0.5 mm thick YAG single crystal which is imaged through a lens on to the CCD.The CCD electronics is designed to be as flexible as possible and allows a wide variation in the readout speed to cater for the relatively fast application where readout noise is less critical and low readout noise applications where the extra few seconds of readout time are not significant. The CCD electronics is built in VME format which is controlled through a S-bus to VME driver. With two parallel channels of readout the whole image can be read out in similar 1 s (using the faster readout speed) with 16 bit precision and the image is displayed under X-Windows in a few seconds. The present readout works at 500 kHz and has a noise of similar 30 e rms per pixel. With a Peltier cooling device we can operate the CCD at similar -40 circle C which reduces the dark current adequately to allow exposures of up to several minutes. Several examples of patterns collected with the system on a Philips CM12 microscope will be presented. ((orig.))

  1. Study of x-ray CCD image sensor and application

    Wang, Shuyun; Li, Tianze

    2008-12-01

    In this paper, we expounded the composing, specialty, parameter, its working process, key techniques and methods for charge coupled devices (CCD) twice value treatment. Disposal process for CCD video signal quantification was expatiated; X-ray image intensifier's constitutes, function of constitutes, coupling technique of X-ray image intensifier and CCD were analyzed. We analyzed two effective methods to reduce the harm to human beings when X-ray was used in the medical image. One was to reduce X-ray's radiation and adopt to intensify the image penetrated by X-ray to gain the same effect. The other was to use the image sensor to transfer the images to the safe area for observation. On this base, a new method was presented that CCD image sensor and X-ray image intensifier were combined organically. A practical medical X-ray photo electricity system was designed which can be used in the records and time of the human's penetrating images. The system was mainly made up with the medical X-ray, X-ray image intensifier, CCD vidicon with high resolution, image processor, display and so on. Its characteristics are: change the invisible X-ray into the visible light image; output the vivid images; short image recording time etc. At the same time we analyzed the main aspects which affect the system's resolution. Medical photo electricity system using X-ray image sensor can reduce the X-ray harm to human sharply when it is used in the medical diagnoses. At last we analyzed and looked forward the system's application in medical engineering and the related fields.

  2. Programmable CCD imaging system for synchrotron radiation studies

    Rodricks, B.; Brizard, C.

    1992-01-01

    A real-time imaging system for x-ray detection has been developed. The CAMAC-based system has a Charge Coupled Device (CCD) as its active detection element. The electronics consist of a CAMAC-crate-based dedicated microprocessor coupled to arbitrary waveform generators, programmable timing, and ADC modules. The hardware flexibility achievable through this system enables one to use virtually any commercially available CCD. A dedicated CAMAC-based display driver allows for real-time imaging on a high-resolution color monitor. An optional front end consisting of a fiber-optic taper and a focusing optical lens system coupled to a phosphor screen allows for large area imaging. Further, programming flexibility, in which the detector can be used in different read-out modes, enables it to be exploited for time-resolved experiments. In one mode, sections of the CCD can be read-out with millisecond time-resolution and, in another, the use of the CCD as a storage device is exploited resulting in microsecond time-resolution. Three different CCDs with radically different read-out timings and waveforms have been tested: the TI 4849, a 39Ox584 pixel array; TC 215, a 1024x1O24 pixel array; and the TH 7883, a 576x384 pixel array. The TC 215 and TI 4849 are single-phase CCDs manufactured by Texas Instruments, and the TH 7883 is a four-phase device manufactured by Thomson-CSF. The CCD characterized for uniformity, charge transfer efficiency (CTE), linearity, and sensitivity is the TC215

  3. A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

    Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

    2017-02-01

    This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

  4. Immunomodulatory effect of APS and PSP is mediated by Ca2+-cAMP and TLR4/NF-κB signaling pathway in macrophage.

    Wang, Zhixue; Liu, Zijing; Zhou, Lijng; Long, Tingting; Zhou, Xing; Bao, Yixi

    2017-01-01

    This study is to investigate the role of second messengers and TLR4/NF-κB signaling pathway in the immunomodulatory activities of Astragalus polysaccharide (APS) and Polysaccharopeptide (PSP) in macrophages. RAW 264.7 macrophage cells were treated with APS, PSP, lipopolysaccharide (LPS), or NiCl 2 . Power-spectral method was used to detect protein kinase C (PKC) and Griess reaction to detect nitric oxide (NO). ELISA was conducted to detect cyclic adenosine monophosphate (cAMP), diglycerides (DAG), inositol 1, 4, 5-triphosphate (IP3), tumor necrosis factor-α (TNF-α) and interleukin-6 (IL-6). Confocal laser scanning microscopy was performed to detect calcium level. qRT-PCR and Western blot was used to detect mRNA and protein expression of NF-κB. APS and PSP significantly increased the concentrations of intracellular second messengers (NO, cAMP, DAG, IP3, Ca 2+ ) and the activity of PKC in macrophages (pAPS and PSP (pAPS and PSP mediated immunomodulatory activities in macrophages. Copyright © 2016 Elsevier B.V. All rights reserved.

  5. CMOS-compatible spintronic devices: a review

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  6. CMOS MEMS capacitive absolute pressure sensor

    Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

    2013-01-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

  7. Optical CT scanning of PRESAGETM polyurethane samples with a CCD-based readout system

    Doran, S J; Krstajic, N; Adamovics, J; Jenneson, P M

    2004-01-01

    This article demonstrates the resolution capabilities of the CCD scanner under ideal circumstances and describes the first CCD-based optical CT experiments on a new class of dosimeter, known as PRESAGE TM (Heuris Pharma, Skillman, NJ)

  8. Advancing the Technology of Monolithic CMOS detectors for their use as X-ray Imaging Spectrometers

    Kenter, Almus

    The Smithsonian Astrophysical Observatory (SAO) proposes a two year program to further advance the scientific capabilities of monolithic CMOS detectors for use as x-ray imaging spectrometers. This proposal will build upon the progress achieved with funding from a previous APRA proposal that ended in 2013. As part of that previous proposal, x- ray optimized, highly versatile, monolithic CMOS imaging detectors and technology were developed and tested. The performance and capabilities of these devices were then demonstrated, with an emphasis on the performance advantages these devices have over CCDs and other technologies. The developed SAO/SRI-Sarnoff CMOS devices incorporate: Low noise, high sensitivity ("gain") pixels; Highly parallel on-chip signal chains; Standard and very high resistivity (30,000Ohm-cm) Si; Back-Side thinning and passivation. SAO demonstrated the performance benefits of each of these features in these devices. This new proposal high-lights the performance of this previous generation of devices, and segues into new technology and capability. The high sensitivity ( 135uV/e) 6 Transistor (6T) Pinned Photo Diode (PPD) pixels provided a large charge to voltage conversion gain to the detect and resolve even small numbers of photo electrons produced by x-rays. The on-chip, parallel signal chain processed an entire row of pixels in the same time that a CCD requires to processes a single pixel. The resulting high speed operation ( 1000 times faster than CCD) provide temporal resolution while mitigating dark current and allowed room temperature operation. The high resistivity Si provided full (over) depletion for thicker devices which increased QE for higher energy x-rays. In this proposal, SAO will investigate existing NMOS and existing PMOS devices as xray imaging spectrometers. Conventional CMOS imagers are NMOS. NMOS devices collect and measure photo-electrons. In contrast, PMOS devices collect and measure photo-holes. PMOS devices have various

  9. Anionic lipids and the cytoskeletal proteins MreB and RodZ define the spatio-temporal distribution and function of membrane stress controller PspA in Escherichia coli.

    Jovanovic, Goran; Mehta, Parul; Ying, Liming; Buck, Martin

    2014-11-01

    All cell types must maintain the integrity of their membranes. The conserved bacterial membrane-associated protein PspA is a major effector acting upon extracytoplasmic stress and is implicated in protection of the inner membrane of pathogens, formation of biofilms and multi-drug-resistant persister cells. PspA and its homologues in Gram-positive bacteria and archaea protect the cell envelope whilst also supporting thylakoid biogenesis in cyanobacteria and higher plants. In enterobacteria, PspA is a dual function protein negatively regulating the Psp system in the absence of stress and acting as an effector of membrane integrity upon stress. We show that in Escherichia coli the low-order oligomeric PspA regulatory complex associates with cardiolipin-rich, curved polar inner membrane regions. There, cardiolipin and the flotillin 1 homologue YqiK support the PspBC sensors in transducing a membrane stress signal to the PspA-PspF inhibitory complex. After stress perception, PspA high-order oligomeric effector complexes initially assemble in polar membrane regions. Subsequently, the discrete spatial distribution and dynamics of PspA effector(s) in lateral membrane regions depend on the actin homologue MreB and the peptidoglycan machinery protein RodZ. The consequences of loss of cytoplasmic membrane anionic lipids, MreB, RodZ and/or YqiK suggest that the mode of action of the PspA effector is closely associated with cell envelope organization. © 2014 The Authors.

  10. Optimization of polarimetry sensitivity for X-ray CCD

    Hayashida, K; Tsunemi, H; Hashimoto, Y; Ohtani, M

    1999-01-01

    X-ray polarimetry with CCD has been performed using a polarized X-ray beam from an electron impact X-ray source. The standard data reduction method employing double-pixel events yields the modulation factor M of 0.14 at 27 keV and 0.24 at 43 keV for the 12 mu m pixel size CCD chip. We develop a new data reduction method, in which multi-pixel events are employed, and which approximates the charge spread as an oval shape. We optimize the reduction parameters, so that we improve the P sub m sub i sub n (minimum detectable polarization degree) by factor of three from the value obtained through the usual double-pixel event method.

  11. Entirely saturated unilateral smear of laser spot in CCD

    Zhang Zhen; Zhou Menglian; Zhang Jianmin; Lin Xinwei

    2013-01-01

    In the video of linear CCD camera being irradiated by 532 nm CW laser, the entirely saturated unilateral smear of laser spot was found. The smear area does not represent the distribution of laser. Since this smear lies merely in one side of laser spot, it can not be induced by light leaking or carriers blooming, and it may be induced by charge transfer loss. However, the feature that the smear area is entirely saturated can not be explained by the current constant model of charge transfer inefficiency. Based on the inner structure and operating principle of buried channel CCD, a new model of charge transfer inefficiency that varies with charge quantity is proposed, which can explain the entirely saturated unilateral smear of laser spot. (authors)

  12. Two-dimensional spectrophotometry of planetary nebulae by CCD imaging

    Jacoby, G.H.; Africano, J.L.; Quigley, R.J.; Western Washington Univ., Bellingham, WA)

    1987-01-01

    The spatial distribution of the electron temperature and density and the ionic abundances of O(+), O(2+), N(+), and S(+) have been derived from CCD images of the planetary nebulae NGC 40 and NGC 6826 taken in the important emission lines of forbidden O II, forbidden O III, H-beta, forbidden N II, and forbidden S II. The steps required in the derivation of the absolute fluxes, line, ratios, and ionic abundances are outlined and then discussed in greater detail. The results show that the CCD imaging technique for two-dimensional spectrophotometry can effectively compete with classical spectrophotometry, providing the added benefits of complete spatial coverage at seeing-disk spatial resolution. The multiplexing in the spatial dimension, however, results in a loss of spectral information, since only one emission line is observed at any one time. 37 references

  13. Stroboscope Based Synchronization of Full Frame CCD Sensors

    Liang Shen

    2017-04-01

    Full Text Available The key obstacle to the use of consumer cameras in computer vision and computer graphics applications is the lack of synchronization hardware. We present a stroboscope based synchronization approach for the charge-coupled device (CCD consumer cameras. The synchronization is realized by first aligning the frames from different video sequences based on the smear dots of the stroboscope, and then matching the sequences using a hidden Markov model. Compared with current synchronized capture equipment, the proposed approach greatly reduces the cost by using inexpensive CCD cameras and one stroboscope. The results show that our method could reach a high accuracy much better than the frame-level synchronization of traditional software methods.

  14. CCD-based thermoreflectance microscopy: principles and applications

    Farzaneh, M; Maize, K; Shakouri, A; Lueerssen, D; Summers, J A; Hudgings, Janice A; Mayer, P M; Ram, R J; Raad, P E; Pipe, K P

    2009-01-01

    CCD-based thermoreflectance microscopy has emerged as a high resolution, non-contact imaging technique for thermal profiling and performance and reliability analysis of numerous electronic and optoelectronic devices at the micro-scale. This thermography technique, which is based on measuring the relative change in reflectivity of the device surface as a function of change in temperature, provides high-resolution thermal images that are useful for hot spot detection and failure analysis, mapping of temperature distribution, measurement of thermal transient, optical characterization of photonic devices and measurement of thermal conductivity in thin films. In this paper we review the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermoreflectance microscopy in various devices. (topical review)

  15. Stroboscope Based Synchronization of Full Frame CCD Sensors

    Shen, Liang; Feng, Xiaobing; Zhang, Yuan; Shi, Min; Zhu, Dengming; Wang, Zhaoqi

    2017-01-01

    The key obstacle to the use of consumer cameras in computer vision and computer graphics applications is the lack of synchronization hardware. We present a stroboscope based synchronization approach for the charge-coupled device (CCD) consumer cameras. The synchronization is realized by first aligning the frames from different video sequences based on the smear dots of the stroboscope, and then matching the sequences using a hidden Markov model. Compared with current synchronized capture equi...

  16. CCD photometry of Cepheid sequences in four nearby galaxies

    Metcalfe, N.; Shanks, T.

    1991-01-01

    We present Isaac Newton Telescope B and V CCD observations of deep photometric sequences in the vicinity of Cepheid variable stars in three nearby galaxies - M31, M33 and NGC 2403. We have also checked the photometry of the brightest stars in M81 and its dwarf companion, Holmberg IX. We use our data, combined with other recent results, to re-analyse the Cepheid distances to these galaxies. (author)

  17. Ultraviolet downconverting phosphor for use with silicon CCD imagers

    Blouke, M. M.; Cowens, M. W.; Hall, J. E.; Westphal, J. A.; Christensen, A. B.

    1980-01-01

    The properties and application of a UV downconverting phosphor (coronene) to silicon charge coupled devices are discussed. Measurements of the absorption spectrum have been extended to below 1000 A, and preliminary results indicate the existence of useful response to at least 584 A. The average conversion efficiency of coronene was measured to be approximately 20% at 2537 A. Imagery at 3650 A using a backside illuminated 800 x 800 CCD coated with coronene is presented.

  18. CCD Photometry of W UMa Type Binary TY UMa

    Young Woon Kang

    2001-06-01

    Full Text Available We present VRI CCD photometry of W UMa type binary TY UMa. The light curves show that the secondary minimum is deeper than theprimary minimum and the maximum I (0.p25 is 0.m023 brighter than the maximum II (0.p75. The V light curve has beenanalyzed and the photometric solutions have been determined by the method of Wilson & Devinney differential correction. Weadopted the spot model to explain the asymetric light curve.

  19. STARL -- a Program to Correct CCD Image Defects

    Narbutis, D.; Vanagas, R.; Vansevičius, V.

    We present a program tool, STARL, designed for automatic detection and correction of various defects in CCD images. It uses genetic algorithm for deblending and restoring of overlapping saturated stars in crowded stellar fields. Using Subaru Telescope Suprime-Cam images we demonstrate that the program can be implemented in the wide-field survey data processing pipelines for production of high quality color mosaics. The source code and examples are available at the STARL website.

  20. A CCD fitted to the UV Prime spectrograph: Performance

    Boulade, O.

    1986-10-01

    A CCD camera was fitted to the 3.6 m French-Canadian telescope in Hawai. Performance of the system and observations of elliptic galaxies (stellar content and galactic evolution in a cluster) and quasars (absorption lines in spectra) are reported. In spite of its resolution being only average, the extremely rapid optics of the UV spectrograph gives good signal to noise ratios enabling redshifts and velocity scatter to be calculated with an accuracy better than 30 km/sec [fr

  1. Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

    Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

    2011-01-01

    This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

  2. A Bridge Deflection Monitoring System Based on CCD

    Baohua Shan

    2016-01-01

    Full Text Available For long-term monitoring of the midspan deflection of Songjiazhuang cloverleaf junction on 309 national roads in Zibo city, this paper proposes Zhang’s calibration-based DIC deflection monitoring method. CCD cameras are used to track the change of targets’ position, Zhang’s calibration algorithm is introduced to acquire the intrinsic and extrinsic parameters of CCD cameras, and the DIC method is combined with Zhang’s calibration algorithm to measure bridge deflection. The comparative test between Zhang’s calibration and scale calibration is conducted in lab, and experimental results indicate that the proposed method has higher precision. According to the deflection monitoring scheme, the deflection monitoring software for Songjiazhuang cloverleaf junction is developed by MATLAB, and a 4-channel CCD deflection monitoring system for Songjiazhuang cloverleaf junction is integrated in this paper. This deflection monitoring system includes functions such as image preview, simultaneous collection, camera calibration, deflection display, and data storage. In situ deflection curves show a consistent trend; this suggests that the proposed method is reliable and is suitable for the long-term monitoring of bridge deflection.

  3. Stellar CCD Photometry: New Approach, Principles and Application

    El-Bassuny Alawy, A.

    A new approach is proposed and developed to handle pre-processed CCD frames in order to identify stellar images and derive their relevant parameters. It relies on: 1) Identifying stellar images and assigning approximate positions of their centres using an artificial intelligence technique, (Knowledge Based System), 2) Accurate determination of the centre co-ordinates applying an elementary statistical concept and 3) Estimating the image peak intensity as a stellar magnitude measure employing simple numerical analysis approach. The method has been coded for personal computer users. A CCD frame of the star cluster M67 was adopted as a test case. The results obtained are discussed in comparison with the DAOPHOTII ones and the corresponding published data. Exact coincidence has been found between both results except in very few cases. These exceptions have been discussed in the light of the basis of both methods and the cluster plates. It has been realised that the method suggested represents a very simple, extremely fast, high precision method of stellar CCD photometry. Moreover, it is more capable than DAOPHOTII of handling blended and distorted stellar images. These characteristics show the usefulness of the present method in some astronomical applications, such as auto-focusing and auto-guiding, beside the main purpose, viz. stellar photometry.

  4. Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

    El-Khatib, Ziad; Mahmoud, Samy A

    2012-01-01

    This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

  5. An Implantable CMOS Amplifier for Nerve Signals

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

  6. Recent developments with CMOS SSPM photodetectors

    Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

    2009-10-21

    Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

  7. Desenvolvimento de uma matriz de portas CMOS

    Jose Geraldo Mendes Taveira

    1991-01-01

    Resumo: É apresentado o projeto de uma matriz deportas CMOS. O capítulo 11 descreve as etapas de projeto, incluindo desde a escolha da topologia das células internas e de interface, o projeto e a simulação elétrica, até a geração do lay-out. Ocaprtulo III apresenta o projeto dos circuitos de aplicação, incluídos para permitir a validação da matriz. Os circuitos de apl icação são : Oscilador em anel e comparador de códigos. A matriz foi difundida no Primeiro Projeto Multi-Usuário CMOS Brasile...

  8. CMOS SPDT switch for WLAN applications

    Bhuiyan, M A S; Reaz, M B I; Rahman, L F; Minhad, K N

    2015-01-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal. (paper)

  9. Cmos spdt switch for wlan applications

    Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

    2015-04-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

  10. Registration of Large Motion Blurred CMOS Images

    2017-08-28

    raju@ee.iitm.ac.in - Institution : Indian Institute of Technology (IIT) Madras, India - Mailing Address : Room ESB 307c, Dept. of Electrical ...AFRL-AFOSR-JP-TR-2017-0066 Registration of Large Motion Blurred CMOS Images Ambasamudram Rajagopalan INDIAN INSTITUTE OF TECHNOLOGY MADRAS Final...NUMBER 5f.  WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) INDIAN INSTITUTE OF TECHNOLOGY MADRAS SARDAR PATEL ROAD Chennai, 600036

  11. The CMOS Integration of a Power Inverter

    Mannarino, Eric Francis

    2016-01-01

    Due to their falling costs, the use of renewable energy systems is expanding around the world. These systems require the conversion of DC power into grid-synchronous AC power. Currently, the inverters that carry out this task are built using discrete transistors. TowerJazz Semiconductor Corp. has created a commercial CMOS process that allows for blocking voltages of up to 700 V, effectively removing the barrier to integrating power inverters onto a single chip. This thesis explores this proce...

  12. Advanced CMOS Radiation Effects Testing and Analysis

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; hide

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  13. Plasmonic Modulator Using CMOS Compatible Material Platform

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.

    2014-01-01

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation i...... for integration with existing insulator-metal-insu lator plasmonic waveguides as well as novel photonic/electronic hybrid circuits...

  14. Ultra-low Voltage CMOS Cascode Amplifier

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique.

  15. Aging sensor for CMOS memory cells

    Santos, Hugo Fernandes da Silva

    2016-01-01

    Dissertação de Mestrado, Engenharia e Tecnologia, Instituto Superior de Engenharia, Universidade do Algarve, 2016 As memórias Complementary Metal Oxide Semiconductor (CMOS) ocupam uma percentagem de área significativa nos circuitos integrados e, com o desenvolvimento de tecnologias de fabrico a uma escala cada vez mais reduzida, surgem problemas de performance e de fiabilidade. Efeitos como o BTI (Bias Thermal Instability), TDDB (Time Dependent Dielectric Breakdown), HCI (Hot Carrier Injec...

  16. Ultra-low Voltage CMOS Cascode Amplifier

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique......, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique....

  17. MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

    Jang, Munseon; Yun, Kwang-Seok

    2017-12-01

    In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

  18. C.C.D. readout of a picosecond streak camera with an intensified C.C.D

    Lemonier, M.; Richard, J.C.; Cavailler, C.; Mens, A.; Raze, G.

    1984-08-01

    This paper deals with a digital streak camera readout device. The device consists in a low light level television camera made of a solid state C.C.D. array coupled to an image intensifier associated to a video-digitizer coupled to a micro-computer system. The streak camera images are picked-up as a video signal, digitized and stored. This system allows the fast recording and the automatic processing of the data provided by the streak tube

  19. CMOS image sensors: State-of-the-art

    Theuwissen, Albert J. P.

    2008-09-01

    This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

  20. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

    Wang, T.

    2017-01-01

    The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

  1. Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

    Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2011-01-01

    In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

  2. Characterization of TCHQ-induced genotoxicity and mutagenesis using the pSP189 shuttle vector in mammalian cells

    Wang Jing, E-mail: avaecn@gmail.com [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Yu Shouyi [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Jiao Shouhai [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Shandong Institute of Endocrine and Metabolic Diseases, Shandong Academy of Medical Sciences, Jinan 250062 (China); Lv Xiaowen [Feed Safety Reference Laboratory of Ministry of Agriculture, Feed Research Institute, Chinese Academy of Agricultural Sciences, Beijing 100081 (China); Ma Min [Laboratory of Environmental Biotechnology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Zhu Benzhan; Du Yuguo [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

    2012-01-03

    Tetrachlorohydroquinone (TCHQ) is a major toxic metabolite of the widely used wood preservative, pentachlorophenol (PCP), and it has also been implicated in PCP genotoxicity. However, the underlying mechanisms of genotoxicity and mutagenesis induced by TCHQ remain unclear. In this study, we examined the genotoxicity of TCHQ by using comet assays to detect DNA breakage and formation of TCHQ-DNA adducts. Then, we further verified the levels of mutagenesis by using the pSP189 shuttle vector in A549 human lung carcinoma cells. We demonstrated that TCHQ causes significant genotoxicity by inducing DNA breakage and forming DNA adducts. Additionally, DNA sequence analysis of the TCHQ-induced mutations revealed that 85.36% were single base substitutions, 9.76% were single base insertions, and 4.88% were large fragment deletions. More than 80% of the base substitutions occurred at G:C base pairs, and the mutations were G:C to C:G, G:C to T:A or G:C to A:T transversions and transitions. The most common types of mutations in A549 cells were G:C to A:T (37.14%) and A:T to C:G transitions (14.29%) and G:C to C:G (34.29%) and G:C to T:A (11.43%) transversions. We identified hotspots at nucleotides 129, 141, and 155 in the supF gene of plasmid pSP189. These mutation hotspots accounted for 63% of all single base substitutions. We conclude that TCHQ induces sequence-specific DNA mutations at high frequencies. Therefore, the safety of using this product would be carefully examined.

  3. The putative thiosulfate sulfurtransferases PspE and GlpE contribute to virulence of Salmonella Typhimurium in the mouse model of systemic disease

    Wallrodt, Inke; Jelsbak, Lotte; Thorndahl, Lotte

    2013-01-01

    contribute to S. Typhimurium virulence, as a glpE and pspE double deletion strain showed significantly decreased virulence in a mouse model of systemic infection. However, challenge of cultured epithelial cells and macrophages did not reveal any virulence-associated phenotypes. We hypothesized...

  4. Crystallization of the C-terminal domain of the addiction antidote CcdA in complex with its toxin CcdB

    Buts, Lieven; De Jonge, Natalie; Loris, Remy; Wyns, Lode; Dao-Thi, Minh-Hoa

    2005-01-01

    The CcdA C-terminal domain was crystallized in complex with CcdB in two crystal forms that diffract to beyond 2.0 Å resolution. CcdA and CcdB are the antidote and toxin of the ccd addiction module of Escherichia coli plasmid F. The CcdA C-terminal domain (CcdA C36 ; 36 amino acids) was crystallized in complex with CcdB (dimer of 2 × 101 amino acids) in three different crystal forms, two of which diffract to high resolution. Form II belongs to space group P2 1 2 1 2 1 , with unit-cell parameters a = 37.6, b = 60.5, c = 83.8 Å and diffracts to 1.8 Å resolution. Form III belongs to space group P2 1 , with unit-cell parameters a = 41.0, b = 37.9, c = 69.6 Å, β = 96.9°, and diffracts to 1.9 Å resolution

  5. The development of high-speed 100 fps CCD camera

    Hoffberg, M.; Laird, R.; Lenkzsus, F.; Liu, C.; Rodricks, B.

    1997-01-01

    This paper describes the development of a high-speed CCD digital camera system. The system has been designed to use CCDs from various manufacturers with minimal modifications. The first camera built on this design utilizes a Thomson 512 x 512 pixel CCD as its sensor, which is read out from two parallel outputs at a speed of 15 MHz/pixel/output. The data undergo correlated double sampling after which it is digitized into 12 bits. The throughput of the system translates into 60 MB/second, which is either stored directly in a PC or transferred to a custom-designed VXI module. The PC data acquisition version of the camera can collect sustained data in real time that is limited to the memory installed in the PC. The VXI version of the camera, also controlled by a PC, stores 512 MB of real-time data before it must be read out to the PC disk storage. The uncooled CCD can be used either with lenses for visible light imaging or with a phosphor screen for X-ray imaging. This camera has been tested with a phosphor screen coupled to a fiber-optic face plate for high-resolution, high-speed X-ray imaging. The camera is controlled through a custom event-driven user-friendly Windows package. The pixel clock speed can be changed from 1 to 15 MHz. The noise was measured to be 1.05 bits at a 13.3 MHz pixel clock. This paper will describe the electronics, software, and characterizations that have been performed using both visible and X-ray photons. (orig.)

  6. CCD Development Progress at Lawrence Berkeley National Laboratory

    Kolbe, W.F.; Holland, S.E.; Bebek, C.J.

    2006-01-01

    P-channel CCD imagers, 200-300um thick, fully depleted, and back-illuminat ed are being developed for scientific applications including ground- and space-based astronomy and x-ray detection. These thick devices have extended IR response, good point-spread function (PSF) and excellent radiation tolerance. Initially, these CCDs were made in-house at LBNL using 100 mm diameter wafers. Fabrication on high-resistivity 150 mm wafers is now proceeding according to a model in which the wafers are fir...

  7. A luminescence imaging system based on a CCD camera

    Duller, G.A.T.; Bøtter-Jensen, L.; Markey, B.G.

    1997-01-01

    Stimulated luminescence arising from naturally occurring minerals is likely to be spatially heterogeneous. Standard luminescence detection systems are unable to resolve this variability. Several research groups have attempted to use imaging photon detectors, or image intensifiers linked...... to photographic systems, in order to obtain spatially resolved data. However, the former option is extremely expensive and it is difficult to obtain quantitative data from the latter. This paper describes the use of a CCD camera for imaging both thermoluminescence and optically stimulated luminescence. The system...

  8. Neutral-beam performance analysis using a CCD camera

    Hill, D.N.; Allen, S.L.; Pincosy, P.A.

    1986-01-01

    We have developed an optical diagnostic system suitable for characterizing the performance of energetic neutral beams. An absolutely calibrated CCD video camera is used to view the neutral beam as it passes through a relatively high pressure (10 -5 Torr) region outside the neutralizer: collisional excitation of the fast deuterium atoms produces H/sub proportional to/ emission (lambda = 6561A) that is proportional to the local atomic current density, independent of the species mix of accelerated ions over the energy range 5 to 20 keV. Digital processing of the video signal provides profile and aiming information for beam optimization. 6 refs., 3 figs

  9. A FORTRAN realization of the block adjustment of CCD frames

    Yu, Yong; Tang, Zhenghong; Li, Jinling; Zhao, Ming

    A FORTRAN version realization of the block adjustment (BA) of overlapping CCD frames is developed. The flowchart is introduced including (a) data collection, (b) preprocessing, and (c) BA and object positioning. The subroutines and their functions are also demonstrated. The program package is tested by simulated data with/without the application of white noises. It is also preliminarily applied to the reduction of optical positions of four extragalactic radio sources. The results show that because of the increase in the sky coverage and number of reference stars, the precision of deducted positions is improved compared with single plate adjustment.

  10. BioCMOS Interfaces and Co-Design

    Carrara, Sandro

    2013-01-01

    The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

  11. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

    Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

    2018-01-01

    A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

  12. High performance flexible CMOS SOI FinFETs

    Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

  13. First principle leakage current reduction technique for CMOS devices

    Tsague, HD

    2015-12-01

    Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

  14. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

  15. Variation-aware advanced CMOS devices and SRAM

    Shin, Changhwan

    2016-01-01

    This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

  16. Simulations of depleted CMOS sensors for high-radiation environments

    Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

    2017-01-01

    After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

  17. Decal electronics for printed high performance cmos electronic systems

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  18. Broadband image sensor array based on graphene-CMOS integration

    Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

    2017-06-01

    Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

  19. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  20. An Implantable CMOS Amplifier for Nerve Signals

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2003-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

  1. CMOS current controlled fully balanced current conveyor

    Wang Chunhua; Zhang Qiujing; Liu Haiguang

    2009-01-01

    This paper presents a current controlled fully balanced second-generation current conveyor circuit (CF-BCCII). The proposed circuit has the traits of fully balanced architecture, and its X-Y terminals are current controllable. Based on the CFBCCII, two biquadratic universal filters are also proposed as its applications. The CFBCCII circuits and the two filters were fabricated with chartered 0.35-μm CMOS technology; with ±1.65 V power supply voltage, the total power consumption of the CFBCCII circuit is 3.6 mW. Comparisons between measured and HSpice simulation results are also given.

  2. CMOS Current-mode Operational Amplifier

    Kaulberg, Thomas

    1992-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2......A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  3. A CMOS current-mode operational amplifier

    Kaulberg, Thomas

    1993-01-01

    current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2......A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

  4. Radiation-hardened CMOS integrated circuits

    Pikor, A.; Reiss, E.M.

    1980-01-01

    Substantial effort has been directed at radiation-hardening CMOS integrated circuits using various oxide processes. While most of these integrated circuits have been successful in demonstrating megarad hardness, further investigations have shown that the 'wet-oxide process' is most compatible with the RCA CD4000 Series process. This article describes advances in the wet-oxide process that have resulted in multimegarad hardness and yield to MIL-M-38510 screening requirements. The implementation of these advances into volume manufacturing is geared towards supplying devices for aerospace requirements such as the Defense Meterological Satellite program (DMSP) and the Global Positioning Satellite (GPS). (author)

  5. Monolithic CMOS imaging x-ray spectrometers

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  6. Nano-CMOS gate dielectric engineering

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  7. CMOS biomicrosystems where electronics meets biology

    2011-01-01

    "The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum"--

  8. CCD Camera Lens Interface for Real-Time Theodolite Alignment

    Wake, Shane; Scott, V. Stanley, III

    2012-01-01

    Theodolites are a common instrument in the testing, alignment, and building of various systems ranging from a single optical component to an entire instrument. They provide a precise way to measure horizontal and vertical angles. They can be used to align multiple objects in a desired way at specific angles. They can also be used to reference a specific location or orientation of an object that has moved. Some systems may require a small margin of error in position of components. A theodolite can assist with accurately measuring and/or minimizing that error. The technology is an adapter for a CCD camera with lens to attach to a Leica Wild T3000 Theodolite eyepiece that enables viewing on a connected monitor, and thus can be utilized with multiple theodolites simultaneously. This technology removes a substantial part of human error by relying on the CCD camera and monitors. It also allows image recording of the alignment, and therefore provides a quantitative means to measure such error.

  9. Fast event recorder utilizing a CCD analog shift register

    Ducar, R.J.; McIntyre, P.M.

    1978-01-01

    A system of electronics has been developed to allow the capture and recording of relatively fast, low-amplitude analog events. The heart of the system is a dual 455-cell analog shift register charge-coupled device, Fairchild CCD321ADC-3. The CCD is operated in a dual clock mode. The input is sampled at a selectable clock rate of .25-20 MHz. The stored analog data is then clocked out at a slower rate, typically about .25 MHz. The time base expansion of the analog data allows for analog-to-digital conversion and memory storage using conventional medium-speed devices. The digital data is sequentially loaded into a static RAM and may then be block transferred to a computer. The analog electronics are housed in a single-width NIM module, and the RAM memory in a single-width CAMAC module. Each pair of modules provides six parallel channels. Cost is about $200.00 per channel. Applications are described for ionization imaging (TPC, IRC) and long-drift calorimetry in liquid argon

  10. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  11. The design of the CMOS wireless bar code scanner applying optical system based on ZigBee

    Chen, Yuelin; Peng, Jian

    2008-03-01

    The traditional bar code scanner is influenced by the length of data line, but the farthest distance of the wireless bar code scanner of wireless communication is generally between 30m and 100m on the market. By rebuilding the traditional CCD optical bar code scanner, a CMOS code scanner is designed based on the ZigBee to meet the demands of market. The scan system consists of the CMOS image sensor and embedded chip S3C2401X, when the two dimensional bar code is read, the results show the inaccurate and wrong code bar, resulted from image defile, disturber, reads image condition badness, signal interference, unstable system voltage. So we put forward the method which uses the matrix evaluation and Read-Solomon arithmetic to solve them. In order to construct the whole wireless optics of bar code system and to ensure its ability of transmitting bar code image signals digitally with long distances, ZigBee is used to transmit data to the base station, and this module is designed based on image acquisition system, and at last the wireless transmitting/receiving CC2430 module circuit linking chart is established. And by transplanting the embedded RTOS system LINUX to the MCU, an applying wireless CMOS optics bar code scanner and multi-task system is constructed. Finally, performance of communication is tested by evaluation software Smart RF. In broad space, every ZIGBEE node can realize 50m transmission with high reliability. When adding more ZigBee nodes, the transmission distance can be several thousands of meters long.

  12. Design and Development of Multi-Purpose CCD Camera System with Thermoelectric Cooling: Hardware

    Y.-W. Kang

    2007-12-01

    Full Text Available We designed and developed a multi-purpose CCD camera system for three kinds of CCDs; KAF-0401E(768×512, KAF-1602E(1536×1024, KAF-3200E(2184×1472 made by KODAK Co.. The system supports fast USB port as well as parallel port for data I/O and control signal. The packing is based on two stage circuit boards for size reduction and contains built-in filter wheel. Basic hardware components include clock pattern circuit, A/D conversion circuit, CCD data flow control circuit, and CCD temperature control unit. The CCD temperature can be controlled with accuracy of approximately 0.4° C in the max. range of temperature, Δ 33° C. This CCD camera system has with readout noise 6 e^{-}, and system gain 5 e^{-}/ADU. A total of 10 CCD camera systems were produced and our tests show that all of them show passable performance.

  13. A Biologically Inspired CMOS Image Sensor

    Sarkar, Mukul

    2013-01-01

    Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

  14. A new CMOS Hall angular position sensor

    Popovic, R.S.; Drljaca, P. [Swiss Federal Inst. of Tech., Lausanne (Switzerland); Schott, C.; Racz, R. [SENTRON AG, Zug (Switzerland)

    2001-06-01

    The new angular position sensor consists of a combination of a permanent magnet attached to a shaft and of a two-axis magnetic sensor. The permanent magnet produces a magnetic field parallel with the magnetic sensor plane. As the shaft rotates, the magnetic field also rotates. The magnetic sensor is an integrated combination of a CMOS Hall integrated circuit and a thin ferromagnetic disk. The CMOS part of the system contains two or more conventional Hall devices positioned under the periphery of the disk. The ferromagnetic disk converts locally a magnetic field parallel with the chip surface into a field perpendicular to the chip surface. Therefore, a conventional Hall element can detect an external magnetic field parallel with the chip surface. As the direction of the external magnetic field rotates in the chip plane, the output voltage of the Hall element varies as the cosine of the rotation angle. By placing the Hall elements at the appropriate places under the disk periphery, we may obtain the cosine signals shifted by 90 , 120 , or by any other angle. (orig.)

  15. CMOS latch-up analysis and prevention

    Shafer, B.D.

    1975-06-01

    An analytical model is presented which develops relationships between ionization rates, minority carrier lifetimes, and latch-up in bulk CMOS integrated circuits. The basic mechanism for latch-up is the SCR action reported by Gregory and Shafer. The SCR is composed of a vertical NPN transistor formed by the N-channel source diffusion, the P-Well, and the N-substrate. The second part of the SCR is the lateral PNP transistor made up of the P-channel source diffusion, the N-substrate, and P-Well. It is shown that the NPN transistor turns on due to photocurrent-induced lateral voltage drops in the base of the transistor. The gain of this double diffused transistor has been shown to be as high as 100. Therefore, the transistor action of this device produces a much larger current flow in the substrate. This transistor current adds to that produced by the P-Well diode photocurrent in the substrate. It is found that the combined flow of current in the substrate forward biases the base emitter junction of the PNP device long before this could occur due to the P-Well photocurrent alone. The analysis indicated that a CD4007A CMOS device biased in the normal mode of operation should latch at about 2 . 10 8 rads/sec. Experimental results produced latch-up at 1 to 3 . 10 8 rads/sec. (U.S.)

  16. Planar pixel sensors in commercial CMOS technologies

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  17. All-CMOS night vision viewer with integrated microdisplay

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

    2014-02-01

    The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

  18. First tests with fully depleted PN-CCD's

    Strueder, L.; Lutz, G.; Sterzik, M.; Holl, P.; Kemmer, J.; Prechtel, U.; Ziemann, T.; Rehak, P.

    1987-01-01

    We have fabricated 280 μm thick fully depletable pn CCD's on high resistivity silicon (/rho/ ∼ 2.5 kΩcm). Its operation is based on the semiconductor drift chamber principle proposed by Gatti and Rheak. They are designed as energy and position sensitive radiation detector for (minimum) ionizing particles and X-ray imaging. Two dimensional semiconductor device modeling demonstrates the basic charge transer mechanisms. Prototypes of the detectors have been tested in static and dynamic conditions. A preliminary charge transfer inefficiency was determined to 6 x 10/sup/minus/3/. The charge loss during the transfer is discussed and as a consequence we have developed an improved design for a second fabrication iteration which is now being produced. 4 refs., 15 figs

  19. BV photographic and CCD photometry of IC 4651

    Anthony-Twarog, B.J.; Mukherjee, K.; Twarog, B.A.; Caldwell, N.

    1988-01-01

    A BV photometric survey in IC 4651 based on photographic and CCD material calibrated with photoelectric photometry from Eggen (1971) and Anthony-Twarog and Twarog (1987) has been completed. The color-magnitude diagram is consistent with an age of 2.4 + or - 0.3 x 10 to the 9th yr derived by comparison with the isochrones of VandenBerg (1985) if the apparent distance modulus and reddening derived from uvby photometry in Anthony-Twarog and Twarog (1987) are employed. While evidence is found of a hook in the upper main sequence, no evidence is found of a significantly bifurcated main sequence for this cluster, although it is similar in age to NGC 752 and NGC 3680, where this phenomenon has been noted. Finally, the survey has not resolved the apparent deficit of main-sequence stars fainter than V = 14.5 noted in Anthony-Twarog and Twarog (1987). 16 references

  20. A CCD camera probe for a superconducting cyclotron

    Marti, F.; Blue, R.; Kuchar, J.; Nolen, J.A.; Sherrill, B.; Yurkon, J.

    1991-01-01

    The traditional internal beam probes in cyclotrons have consisted of a differential element, a wire or thin strip, and a main probe with several fingers to determine the vertical distribution of the beam. The resolution of these probes is limited, especially in the vertical direction. The authors have developed a probe for their K1200 superconducting cyclotron based on a CCD TV camera that works in a 6 T magnetic field. The camera looks at the beam spot on a scintillating screen. The TV image is processed by a frame grabber that digitizes and displays the image in pseudocolor in real time. This probe has much better resolution than traditional probes. They can see beams with total currents as low as 0.1 pA, with position resolution of about 0.05 mm

  1. CCD photometry of the distant young open cluster NGC 7510

    Sagar, R.; Bonn Univ.; Griffiths, W.K.

    1991-01-01

    CCD observations in B, V and I passbands have been used to generate deep V, (B-V) and V,(V-I) colour-magnitude diagrams for the open cluster NGC 7510. The sample consists of 592 stars reaching down to V=21 mag. There appears to be non-uniform extinction over the face of the cluster with the value of colour excess, E(B-V), ranging from 1.0 to 1.3 mag. The law of interstellar extinction in the direction of the cluster is found to be normal. A broad main sequence is clearly visible in both colour-magnitude diagrams. From the bluest part of the colour-magnitude diagrams, the true distance modulus to the cluster has been estimated as 12.5±0.3 mag and an upper limit of 10 Myr has been assigned for the cluster age. (author)

  2. Chromatic Modulator for High Resolution CCD or APS Devices

    Hartley, Frank T. (Inventor); Hull, Anthony B. (Inventor)

    2003-01-01

    A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

  3. Method to implement the CCD timing generator based on FPGA

    Li, Binhua; Song, Qian; He, Chun; Jin, Jianhui; He, Lin

    2010-07-01

    With the advance of the PFPA technology, the design methodology of digital systems is changing. In recent years we develop a method to implement the CCD timing generator based on FPGA and VHDL. This paper presents the principles and implementation skills of the method. Taking a developed camera as an example, we introduce the structure, input and output clocks/signals of a timing generator implemented in the camera. The generator is composed of a top module and a bottom module. The bottom one is made up of 4 sub-modules which correspond to 4 different operation modes. The modules are implemented by 5 VHDL programs. Frame charts of the architecture of these programs are shown in the paper. We also describe implementation steps of the timing generator in Quartus II, and the interconnections between the generator and a Nios soft core processor which is the controller of this generator. Some test results are presented in the end.

  4. Electromagnetic Compatibility Assessment of CCD Detector Acquisition Chains not Synchronized

    Nicoletto, M.; Boschetti, D.; Ciancetta, E.; Maiorano, E.; Stagnaro, L.

    2016-05-01

    Euclid is a space observatory managed by the European Space Agency; it is the second medium class mission (see Figure 1) in the frame of Cosmic Vision 2015-2025 program.In the frame of this project, the electromagnetic interference between two different and not synchronized Charge Coupled Device (CCD) (see Figure 2) acquisition chains has been evaluated. The key parameter used for this assessment is the electromagnetic noise induced on each other. Taking into account the specificity of the issue, radiation coupling at relative low frequency and in near field conditions, classical approach based on simulations and testing on qualification model cannot be directly applied. Based on that, it has been decided to investigate the issue by test in an incremental way.

  5. DOUBLE STARS IN THE USNO CCD ASTROGRAPHIC CATALOG

    Hartkopf, William I.; Mason, Brian D.; Finch, Charlie T.; Zacharias, Norbert; Wycoff, Gary L.; Hsu, Danley, E-mail: wih@usno.navy.mil, E-mail: bdm@usno.navy.mil, E-mail: finch@usno.navy.mil, E-mail: nz@usno.navy.mil [US Naval Observatory, Washington, DC 20392 (United States)

    2013-10-01

    The newly completed Fourth USNO CCD Astrographic Catalog (UCAC4) has proven to be a rich source of double star astrometry and photometry. Following initial comparisons of UCAC4 results against those obtained by speckle interferometry, the UCAC4 catalog was matched against known double stars in the Washington Double Star Catalog in order to provide additional differential astrometry and photometry for these pairs. Matches to 58,131 pairs yielded 61,895 astrometric and 68,935 photometric measurements. Finally, a search for possible new common proper motion (CPM) pairs was made using new UCAC4 proper motion data; this resulted in 4755 new potential CPM doubles (and an additional 27,718 astrometric and photometric measures from UCAC and other sources)

  6. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  7. Optimal CCD readout by digital correlated double sampling

    Alessandri, C.; Abusleme, A.; Guzman, D.; Passalacqua, I.; Alvarez-Fontecilla, E.; Guarini, M.

    2016-01-01

    Digital correlated double sampling (DCDS), a readout technique for charge-coupled devices (CCD), is gaining popularity in astronomical applications. By using an oversampling ADC and a digital filter, a DCDS system can achieve a better performance than traditional analogue readout techniques at the expense of a more complex system analysis. Several attempts to analyse and optimize a DCDS system have been reported, but most of the work presented in the literature has been experimental. Some approximate analytical tools have been presented for independent parameters of the system, but the overall performance and trade-offs have not been yet modelled. Furthermore, there is disagreement among experimental results that cannot be explained by the analytical tools available. In this work, a theoretical analysis of a generic DCDS readout system is presented, including key aspects such as the signal conditioning stage, the ADC resolution, the sampling frequency and the digital filter implementation. By using a time-domain noise model, the effect of the digital filter is properly modelled as a discrete-time process, thus avoiding the imprecision of continuous-time approximations that have been used so far. As a result, an accurate, closed-form expression for the signal-to-noise ratio at the output of the readout system is reached. This expression can be easily optimized in order to meet a set of specifications for a given CCD, thus providing a systematic design methodology for an optimal readout system. Simulated results are presented to validate the theory, obtained with both time- and frequency-domain noise generation models for completeness.

  8. THE THIRD US NAVAL OBSERVATORY CCD ASTROGRAPH CATALOG (UCAC3)

    Zacharias, N.; Finch, C.; Wycoff, G.; Zacharias, M. I.; Corbin, T.; Dutta, S.; Gaume, R.; Gauss, S.; Hall, D.; Hartkopf, W.; Hsu, D.; Holdenried, E.; Makarov, V.; Mason, B.; Girard, T.; Hambly, N.; Castillo, D.; DiVittorio, M.; Germain, M.; Martines, M.

    2010-01-01

    The third US Naval Observatory (USNO) CCD Astrograph Catalog, UCAC3, was released at the IAU General Assembly on 2009 August 10. It is the first all-sky release in this series and contains just over 100 million objects, about 95 million of them with proper motions, covering about R = 8-16 mag. Current epoch positions are obtained from the observations with the 20 cm aperture USNO Astrograph's 'red lens', equipped with a 4k x 4k CCD. Proper motions are derived by combining these observations with over 140 ground- and space-based catalogs, including Hipparcos/Tycho and the AC2000.2, as well as unpublished measures of over 5000 plates from other astrographs. For most of the faint stars in the southern hemisphere, the Yale/San Juan first epoch plates from the Southern Proper Motion (SPM) program (YSJ1) form the basis for proper motions. These data are supplemented by all-sky Schmidt plate survey astrometry and photometry obtained from the SuperCOSMOS project, as well as 2MASS near-IR photometry. Major differences of UCAC3 data as compared with UCAC2 include a completely new raw data reduction with improved control over systematic errors in positions, significantly improved photometry, slightly deeper limiting magnitude, coverage of the north pole region, greater completeness by inclusion of double stars, and weak detections. This of course leads to a catalog which is not as 'clean' as UCAC2 and problem areas are outlined for the user in this paper. The positional accuracy of stars in UCAC3 is about 15-100 mas per coordinate, depending on magnitude, while the errors in proper motions range from 1 to 10 mas yr -1 depending on magnitude and observing history, with a significant improvement over UCAC2 achieved due to the re-reduced SPM data and inclusion of more astrograph plate data unavailable at the time of UCAC2.

  9. Contribution of the Chromosomal ccdAB Operon to Bacterial Drug Tolerance.

    Gupta, Kritika; Tripathi, Arti; Sahu, Alishan; Varadarajan, Raghavan

    2017-10-01

    One of the first identified and best-studied toxin-antitoxin (TA) systems in Escherichia coli is the F-plasmid-based CcdAB system. This system is involved in plasmid maintenance through postsegregational killing. More recently, ccdAB homologs have been found on the chromosome, including in pathogenic strains of E. coli and other bacteria. However, the functional role of chromosomal ccdAB genes, if any, has remained unclear. We show that both the native ccd operon of the E. coli O157 strain ( ccd O157 ) and the ccd operon from the F plasmid ( ccd F ), when inserted on the E. coli chromosome, lead to protection from cell death under multiple antibiotic stress conditions through formation of persisters, with the O157 operon showing higher protection. While the plasmid-encoded CcdB toxin is a potent gyrase inhibitor and leads to bacterial cell death even under fully repressed conditions, the chromosomally encoded toxin leads to growth inhibition, except at high expression levels, where some cell death is seen. This was further confirmed by transiently activating the chromosomal ccd operon through overexpression of an active-site inactive mutant of F-plasmid-encoded CcdB. Both the ccd F and ccd O157 operons may share common mechanisms for activation under stress conditions, eventually leading to multidrug-tolerant persister cells. This study clearly demonstrates an important role for chromosomal ccd systems in bacterial persistence. IMPORTANCE A large number of free-living and pathogenic bacteria are known to harbor multiple toxin-antitoxin systems, on plasmids as well as on chromosomes. The F-plasmid CcdAB system has been extensively studied and is known to be involved in plasmid maintenance. However, little is known about the function of its chromosomal counterpart, found in several pathogenic E. coli strains. We show that the native chromosomal ccd operon of the E. coli O157 strain is involved in drug tolerance and confers protection from cell death under multiple

  10. Development of a CMOS process using high energy ion implantation

    Stolmeijer, A.

    1986-01-01

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  11. Prevention of CMOS latch-up by gold doping

    Dawes, W.R.; Derbenwick, G.F.

    1976-01-01

    CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

  12. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  13. Aplicando la Metodología PSP para el Desarrollo de un Sistema de Reconocimiento de Gestos

    Erik Ramos Pérez

    2015-12-01

    Full Text Available MUDI es un sistema reconocedor de gestos, capaz de detectar el acercamiento, rotación y cambiar de pieza arqueológica modeladas en 3D existentes en el MureH. El sistema está contextualizado para un museo interactivo en el que los usuarios puedan descubrir las características de las piezas de una forma entretenida y divertida. Para desarrollar el sistema se utilizó PSP, el cual es una metodología encaminada al proceso personal, establecido y regido por etapas bien establecidas, una de ellas es el diseño que permite tener una buena estructura del sistema traduciéndose en una fácil implementación y control de los errores de codificación, así como el manejo de los requerimientos. Para medir la interacción, efectividad y facilidad de uso de MUDI se usaron técnicas de usabilidad, obteniendo resultados favorables, específicamente el acercamiento tuvo una calificación de 4.8, rotación de 4.0 y cambiar pieza de 4.4 en una escala del 0 al 5. Los usuarios manifestaron gran aceptación y buenos comentarios puesto que con MUDI se olvidaban de las visitas tradicionales.

  14. Molecular mechanism of mutagenesis induced by olaquindox using a shuttle vector pSP189/mammalian cell system

    Hao Lihua; Chen Qian; Xiao Xilong

    2006-01-01

    Olaquindox, a quinoxaline 1,4-dioxide derivative from quindoxin, is widely used as an animal growth promoter in China. We tested olaquindox as a mutagen in a SV40-based shuttle vector pSP189 and African green kidney cell (Vero E6 cell line) system to define the safety of olaquindox as a food-additive for animals. When applied at 6.6 μg/ml, olaquindox caused 12 times higher mutation frequency in comparison to untreated controls. More than 70% of base substitutions happened at G:C base pairs featuring G:C to T:A or G:C to A:T conversions. Frequency of point mutations for in vitro modified plasmids was also dramatically increased from the spontaneous background level. Olaquindox-induced mutations did not occur randomly along the supF shuttle vector, but instead, had a hot spot at base pair no. 155 which accounts for 37% of total mutations. Olaquindox-induced mutations also showed sequence-specificity in which most point mutations occurred at site N in a 5'-NNTTNN-3' sequence while most tandem bases deletion and rearrangement were seen at the 5'-ANGGCCNAAA-3' sequence. We conclude that olaquindox induces DNA mutation, therefore, should not be used as an additive to promote animal growth

  15. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    Saffih, Faycal

    2012-06-01

    In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

  16. The putative thiosulfate sulfurtransferases PspE and GlpE contribute to virulence of Salmonella Typhimurium in the mouse model of systemic disease.

    Inke Wallrodt

    Full Text Available The phage-shock protein PspE and GlpE of the glycerol 3-phosphate regulon of Salmonella enterica serovar Typhimurium are predicted to belong to the class of thiosulfate sulfurtransferases, enzymes that traffic sulfur between molecules. In the present study we demonstrated that the two genes contribute to S. Typhimurium virulence, as a glpE and pspE double deletion strain showed significantly decreased virulence in a mouse model of systemic infection. However, challenge of cultured epithelial cells and macrophages did not reveal any virulence-associated phenotypes. We hypothesized that their contribution to virulence could be in sulfur metabolism or by contributing to resistance to nitric oxide, oxidative stress, or cyanide detoxification. In vitro studies demonstrated that glpE but not pspE was important for resistance to H2O2. Since the double mutant, which was the one affected in virulence, was not affected in this assay, we concluded that resistance to oxidative stress and the virulence phenotype was most likely not linked. The two genes did not contribute to nitric oxid stress, to synthesis of essential sulfur containing amino acids, nor to detoxification of cyanide. Currently, the precise mechanism by which they contribute to virulence remains elusive.

  17. The CMOS integration of a power inverter

    Mannarino, Eric Francis

    Due to their falling costs, the use of renewable energy systems is expanding around the world. These systems require the conversion of DC power into grid-synchronous AC power. Currently, the inverters that carry out this task are built using discrete transistors. TowerJazz Semiconductor Corp. has created a commercial CMOS process that allows for blocking voltages of up to 700 V, effectively removing the barrier to integrating power inverters onto a single chip. This thesis explores this process using two topologies. The first is a cell-based switched-capacitor topology first presented by Ke Zou. The second is a novel topology that explores the advantage of using a bused input-output system, as in digital electronics. Simulations run on both topologies confirm the high-efficiency demonstrated in Zou’s process as well as the advantage the bus-based system has in output voltage levels.

  18. Floating Gate CMOS Dosimeter With Frequency Output

    Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.

    2012-04-01

    This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.

  19. Converting structures to optimize the Synchrotron X radiation detection by CCD systems

    Zanella, G.; Zannoni, R.

    1987-01-01

    It is pointed out how the quantum efficiency of X ray detection for CCD detecting system can be improved enlarging their sensivity range by means of heavy element converting structures. So the problem of fabricating CCD with a deep emptying layer is avoided

  20. Timing generator of scientific grade CCD camera and its implementation based on FPGA technology

    Si, Guoliang; Li, Yunfei; Guo, Yongfei

    2010-10-01

    The Timing Generator's functions of Scientific Grade CCD Camera is briefly presented: it generates various kinds of impulse sequence for the TDI-CCD, video processor and imaging data output, acting as the synchronous coordinator for time in the CCD imaging unit. The IL-E2TDI-CCD sensor produced by DALSA Co.Ltd. use in the Scientific Grade CCD Camera. Driving schedules of IL-E2 TDI-CCD sensor has been examined in detail, the timing generator has been designed for Scientific Grade CCD Camera. FPGA is chosen as the hardware design platform, schedule generator is described with VHDL. The designed generator has been successfully fulfilled function simulation with EDA software and fitted into XC2VP20-FF1152 (a kind of FPGA products made by XILINX). The experiments indicate that the new method improves the integrated level of the system. The Scientific Grade CCD camera system's high reliability, stability and low power supply are achieved. At the same time, the period of design and experiment is sharply shorted.

  1. Design of offline measuring system for radiation damage effects on linear CCD

    Zhang Yong; Tang Benqi; Xiao Zhigang; Wang Zujun; Huang Fang; Huang Shaoyan

    2004-01-01

    The paper discusses the hardware design of offline measuring system for radiation damage effects on linear CCD. Some credible results were achieved by using this system. The test results indicate that the system is available for the study of the radiation damage effects on linear CCD. (authors)

  2. CMOS image sensor with contour enhancement

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  3. A Multipurpose CMOS Platform for Nanosensing

    Alberto Bonanno

    2016-11-01

    Full Text Available This paper presents a customizable sensing system based on functionalized nanowires (NWs assembled onto complementary metal oxide semiconductor (CMOS technology. The Micro-for-Nano (M4N chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  4. A Multipurpose CMOS Platform for Nanosensing.

    Bonanno, Alberto; Sanginario, Alessandro; Marasso, Simone L; Miccoli, Beatrice; Bejtka, Katarzyna; Benetto, Simone; Demarchi, Danilo

    2016-11-30

    This paper presents a customizable sensing system based on functionalized nanowires (NWs) assembled onto complementary metal oxide semiconductor (CMOS) technology. The Micro-for-Nano (M4N) chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP) generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC) that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW-229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  5. CMOS front ends for millimeter wave wireless communication systems

    Deferm, Noël

    2015-01-01

    This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

  6. CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

    Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

    2018-04-01

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

    Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

    2006-01-01

    This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

  8. Design of CMOS imaging system based on FPGA

    Hu, Bo; Chen, Xiaolai

    2017-10-01

    In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

  9. CMOS Enabled Microfluidic Systems for Healthcare Based Applications

    Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2018-01-01

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

  10. CMOS serial link for fully duplexed data communication

    Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

    1995-04-01

    This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

  11. CMOS Enabled Microfluidic Systems for Healthcare Based Applications

    Khan, Sherjeel M.

    2018-02-27

    With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

  12. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

    2012-01-01

    A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

  13. Depleted CMOS pixels for LHC proton–proton experiments

    Wermes, N.

    2016-01-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  14. CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

    Haitao Li

    2016-12-01

    Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

  15. High-Voltage Clock Driver for Photon-Counting CCD Characterization

    Baker, Robert

    2013-01-01

    A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

  16. A novel CMOS SRAM feedback element for SEU environments

    Verghese, S.; Wortman, J.J.; Kerns, S.E.

    1987-01-01

    A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells

  17. Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

    Hassan Jassim Motlak

    2015-01-01

    A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to...

  18. CMOS Image Sensors: Electronic Camera On A Chip

    Fossum, E. R.

    1995-01-01

    Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

  19. Poly-SiGe for MEMS-above-CMOS sensors

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  20. Advancement of CMOS Doping Technology in an External Development Framework

    Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

    2011-01-01

    The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

  1. Design optimization of radiation-hardened CMOS integrated circuits

    1975-01-01

    Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

  2. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  3. Properties of the Circumsolar Dust Distribution Determined from STEREO/SECCHI and Implications for PSP and SolO

    Howard, R.; Stenborg, G.

    2017-12-01

    We have performed an analysis of the HI-1A instrument in the STEREO/SECCHI suite to determine the inclination and longitude of the ascending node of the plane of symmetry of the F-corona. The F-corona arises from sunlight scattered by the dust in orbit about the Sun. We find that the inclination and ascending node are not constant in the field of view of the HI-1A (4° to 24° elongation), but are functions of the elongation angle i.e. the distance to the Sun and are slightly different from the parameters determined from the Helios mission. These parameters are reflecting the gravitational influences of Jupiter, Venus and the Sun as well as Lorentz and Poynting-Robinson forces on the dust orbits. The center of symmetry is not the center of the Sun, but is offset by 0.5 Rsun from the center in the direction of the average position of Jupiter during the epoch studied: from 2007-2012. We also observe a slight difference in the inclination when it is north or south of the ecliptic. We suggest this may be due to remnant dust in the orbit of the Kreutz sun-grazing comets which occur at an average rate of one every 2-3 days. Finally, as the dust particles evaporate we expect to see the F-coronal brightness correspondingly decrease. The detectability of the decrease will depend on the amount of dust evaporating, but a 10% change in the density is easily detectable. If a dust free zone surrounding the Sun exists, it will affect the F-coronal intensities observed by PSP and SolO by an observable amount.

  4. Upgrade of ESO's FIERA CCD Controller and PULPO Subsystem

    Reyes-Moreno, J.; Geimer, C.; Balestra, A.; Haddad, N.

    An overview of FIERA is presented with emphasis on its recent upgrade to PCI. The PCI board hosts two DSPs, one for real time control of the camera and another for on-the-fly processing of the incoming video data. In addition, the board is able to make DMA transfers, to synchronize to other boards alike, to be synchronized by a TIM bus and to control PULPO via RS232. The design is based on the IOP480 chip from PLX, for which we have developed a device driver for both Solaris and Linux. One computer is able to host more than one board and therefore can control an array of FIERA detector electronics. PULPO is a multifunctional subsystem widely used at ESO for the housekeeping of CCD cryostat heads and for shutter control. The upgrade of PULPO is based on an embedded PC running Linux. The upgraded PULPO is able to handle 29 temperature sensors, control 8 heaters and one shutter, read out one vacuum sensor and log any combination of parameters.

  5. BVI CCD photometry of the globular cluster M4

    Alcaino, G.; Liller, W.; Alvarado, F.

    1988-01-01

    CCD BV1 main-sequence (MS) photometry of M4, the globular cluster closest to the sun, is presented. The photometry is matched to the BVI isochrones of VandenBerg and Bell (1985). The MS turnoffs are found to be at V = 16.90 + or - 0.05, B-V = 0.81 + or - 0.02, V-I = 0.96 + or - 0.02, and B - I = 1.77 + or - 0.02. The magnitude difference between the MS turnoff and the horizontal branch is Delta M(V) = 3.52 + or - 0.1 for all three color indices. Using Y = 0.2, (Fe/H) = - 1.27, and alpha = 1.65, with a distance modulus of (m-M)V = 12.7 and E(B-V) = 0.41, a consistent age for M4 is deduced in all three color indices of 17 + or - 1.5 Gyr. 34 references

  6. Deep CCD photometry in globular clusters. VII. M30

    Richer, H.B.; Fahlman, G.G.; Vandenberg, D.A.

    1988-01-01

    New UBV CCD photometry in a single field of the globular cluster M30 was obtained, and the data were used to obtain the color magnitude diagram (CMD) of the cluster, its luminosity function, and to derive fundamental cluster parameters. No blue stragglers were found, nor any evidence of a binary sequence in the data even though the field under study is only 21 core radii from the cluster center. The cluster reddening is observed to be 0.068 + or - 0.035, significantly higher than that adopted in most current papers on M30. An intercomparison of the CMDs of three very metal-poor clusters clearly shows that there is no evidence for any age difference between them. The age of M30 itself is found to be about 14 Gyr. The luminosity function of M30 is determined to be M(V) = 8. Comparison of this function with one found by Bolte (1987) at 65 core radii shows clear evidence of mass segregation in the low-mass stars. 44 references

  7. Deep CCD photometry in globular clusters III. M15

    Fahlman, G.G.; Richer, H.B.; Vandenberg, D.A.

    1985-01-01

    CCD photometry in U, B, and V is presented for a 5' x 3' field in the globular cluster M15. The location of the main sequence in the color-magnitude diagram is found here to be significantly bluer than previous studies have indicated. The luminosity function of the cluster is studied down to V = 22.8 (Mroughly-equal7.5) and shown to be consistent with a power-law mass function, n(M) = QM/sup -alpha/ with α = 2.5 +- 1.0, to the limit of our data. The field star population brighter than V = 21.5, is examined in some detail. There appears to be about 50% more stars belonging to the disk in the field as compared with the Bahcall-Soneira standard galaxy model. The reddening to the cluster is found to be E(B-V) = 0.11 +- 0.04 from nine bright field stars. A new value for the ultraviolet excess of the cluster main-sequence stars is obtained, delta(0.6) = 0.25 +- 0.02, and confirms the well-known fact that M15 is among the metal poorest of the globular clusters

  8. LAMOST CCD camera-control system based on RTS2

    Tian, Yuan; Wang, Zheng; Li, Jian; Cao, Zi-Huang; Dai, Wei; Wei, Shou-Lin; Zhao, Yong-Heng

    2018-05-01

    The Large Sky Area Multi-Object Fiber Spectroscopic Telescope (LAMOST) is the largest existing spectroscopic survey telescope, having 32 scientific charge-coupled-device (CCD) cameras for acquiring spectra. Stability and automation of the camera-control software are essential, but cannot be provided by the existing system. The Remote Telescope System 2nd Version (RTS2) is an open-source and automatic observatory-control system. However, all previous RTS2 applications were developed for small telescopes. This paper focuses on implementation of an RTS2-based camera-control system for the 32 CCDs of LAMOST. A virtual camera module inherited from the RTS2 camera module is built as a device component working on the RTS2 framework. To improve the controllability and robustness, a virtualized layer is designed using the master-slave software paradigm, and the virtual camera module is mapped to the 32 real cameras of LAMOST. The new system is deployed in the actual environment and experimentally tested. Finally, multiple observations are conducted using this new RTS2-framework-based control system. The new camera-control system is found to satisfy the requirements for automatic camera control in LAMOST. This is the first time that RTS2 has been applied to a large telescope, and provides a referential solution for full RTS2 introduction to the LAMOST observatory control system.

  9. CCD imaging technology and the war on crime

    McNeill, Glenn E.

    1992-08-01

    Linear array based CCD technology has been successfully used in the development of an Automatic Currency Reader/Comparator (ACR/C) system. The ACR/C system is designed to provide a method for tracking US currency in the organized crime and drug trafficking environments where large amounts of cash are involved in illegal transactions and money laundering activities. United States currency notes can be uniquely identified by the combination of the denomination serial number and series year. The ACR/C system processes notes at five notes per second using a custom transport a stationary linear array and optical character recognition (OCR) techniques to make such identifications. In this way large sums of money can be " marked" (using the system to read and store their identifiers) and then circulated within various crime networks. The system can later be used to read and compare confiscated notes to the known sets of identifiers from the " marked" set to document a trail of criminal activities. With the ACR/C law enforcement agencies can efficiently identify currency without actually marking it. This provides an undetectable means for making each note individually traceable and facilitates record keeping for providing evidence in a court of law. In addition when multiple systems are used in conjunction with a central data base the system can be used to track currency geographically. 1.

  10. Deep CCD survey - galaxy luminosity and color evolution

    Tyson, J.A.

    1988-01-01

    Imaging and photometric observations of a statistically complete sample of galaxies in 12 high-latitude fields, obtained in the BJ (360-520 nm), R (580-720 nm) and I (780-1100 nm) bands using CCD detectors on the 4-m telescopes at CTIO and KPNO, are reported. The data are presented in extensive graphs and sample images and analyzed in detail with reference to theoretical models of galactic origin and evolution. The galaxy number-count slopes, d(log N)/dm, are found to be sub-Euclidean, varying from 0.34 in the I band to 0.45 in the BJ band, where the corrected counts appear to saturate at about 27 mag. The predictions of no-evolution models are shown to underpredict the counts at 25 mag (BJ) by a factor of 5-15 and the extragalactic background light from all galaxies (6.8 x 10 to the -6th erg/sq cm sec sr micron at 450 nm) by a factor greater than 2. 114 references

  11. CCD Parallaxes for 309 Late-type Dwarfs and Subdwarfs

    Dahn, Conard C.; Harris, Hugh C.; Subasavage, John P.; Ables, Harold D.; Guetter, Harry H.; Harris, Fred H.; Luginbuhl, Christian B.; Monet, Alice B.; Monet, David G.; Munn, Jeffrey A.; Pier, Jeffrey R.; Stone, Ronald C.; Vrba, Frederick J.; Walker, Richard L.; Tilleman, Trudy M. [US Naval Observatory, Flagstaff Station, 10391 W. Naval Observatory Road, Flagstaff, AZ 86005-8521 (United States); Canzian, Blaise J. [L-3 Communications/Brashear, 615 Epsilon Drive, Pittsburgh, PA 15238-2807 (United States); Henden, Arne H. [AAVSO, Cambridge, MA 02138 (United States); Leggett, S. K. [Gemini Observatory, Northern Operations Center, 670 N. A’ohoku Place, Hilo, HI 96720 (United States); Levine, Stephen E., E-mail: jsubasavage@nofs.navy.mil [Lowell Observatory, 1400 W. Mars Hill Road, Flagstaff, AZ 86001-4499 (United States)

    2017-10-01

    New, updated, and/or revised CCD parallaxes determined with the Strand Astrometric Reflector at the Naval Observatory Flagstaff Station are presented. Included are results for 309 late-type dwarf and subdwarf stars observed over the 30+ years that the program operated. For 124 of the stars, parallax determinations from other investigators have already appeared in the literature and we compare the different results. Also included here are new or updated VI photometry on the Johnson–Kron-Cousins system for all but a few of the faintest targets. Together with 2MASS JHK{sub s} near-infrared photometry, a sample of absolute magnitude versus color and color versus color diagrams are constructed. Because large proper motion was a prime criterion for targeting the stars, the majority turn out to be either M-type subdwarfs or late M-type dwarfs. The sample also includes 50 dwarf or subdwarf L-type stars, and four T dwarfs. Possible halo subdwarfs are identified in the sample based on tangential velocity, subluminosity, and spectral type. Residuals from the solutions for parallax and proper motion for several stars show evidence of astrometric perturbations.

  12. Solution structure and elevator mechanism of the membrane electron transporter CcdA.

    Zhou, Yunpeng; Bushweller, John H

    2018-02-01

    Membrane oxidoreductase CcdA plays a central role in supplying reducing equivalents from the bacterial cytoplasm to the envelope. It transports electrons across the membrane using a single pair of cysteines by a mechanism that has not yet been elucidated. Here we report an NMR structure of the Thermus thermophilus CcdA (TtCcdA) in an oxidized and outward-facing state. CcdA consists of two inverted structural repeats of three transmembrane helices (2 × 3-TM). We computationally modeled and experimentally validated an inward-facing state, which suggests that CcdA uses an elevator-type movement to shuttle the reactive cysteines across the membrane. CcdA belongs to the LysE superfamily, and thus its structure may be relevant to other LysE clan transporters. Structure comparisons of CcdA, semiSWEET, Pnu, and major facilitator superfamily (MFS) transporters provide insights into membrane transporter architecture and mechanism.

  13. A model for measurement of noise in CCD digital-video cameras

    Irie, K; Woodhead, I M; McKinnon, A E; Unsworth, K

    2008-01-01

    This study presents a comprehensive measurement of CCD digital-video camera noise. Knowledge of noise detail within images or video streams allows for the development of more sophisticated algorithms for separating true image content from the noise generated in an image sensor. The robustness and performance of an image-processing algorithm is fundamentally limited by sensor noise. The individual noise sources present in CCD sensors are well understood, but there has been little literature on the development of a complete noise model for CCD digital-video cameras, incorporating the effects of quantization and demosaicing

  14. Simulation of SEU transients in CMOS ICs

    Kaul, N.; Bhuva, B.L.; Kerns, S.E.

    1991-01-01

    This paper reports that available analytical models of the number of single-event-induced errors (SEU) in combinational logic systems are not easily applicable to real integrated circuits (ICs). An efficient computer simulation algorithm set, SITA, predicts the vulnerability of data stored in and processed by complex combinational logic circuits to SEU. SITA is described in detail to allow researchers to incorporate it into their error analysis packages. Required simulation algorithms are based on approximate closed-form equations modeling individual device behavior in CMOS logic units. Device-level simulation is used to estimate the probability that ion-device interactions produce erroneous signals capable of propagating to a latch (or n output node), and logic-level simulation to predict the spread of such erroneous, latched information through the IC. Simulation results are compared to those from SPICE for several circuit and logic configurations. SITA results are comparable to this established circuit-level code, and SITA can analyze circuits with state-of-the-art device densities (which SPICE cannot). At all IC complexity levels, SITAS offers several factors of 10 savings in simulation time over SPICE

  15. Fast Hopping Frequency Generation in Digital CMOS

    Farazian, Mohammad; Gudem, Prasad S

    2013-01-01

    Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra wideband is a key research goal in digital technology. This volume outlines a frequency plan that can generate all the required frequencies from a single fixed frequency, able to implement center frequencies with no more than two levels of SSB mixing. It recognizes the need for future synthesizers to bypass on-chip inductors and operate at low voltages to enable the increased integration and efficiency of networked appliances. The author examines in depth the architecture of the dividers that generate the necessary frequencies from a single base frequency and are capable of establishing a fractional division ratio.   Presenting the first CMOS inductorless single PLL 14-band frequency synthesizer for MB-OFDMUWB makes this volume a key addition to the literature, and with the synthesizer capable of arbitrary band-hopping in less than two nanoseconds, it operates well within the desired range on a 1.2-volt power s...

  16. Electrothermal frequency references in standard CMOS

    Kashmiri, S Mahdi

    2013-01-01

    This book describes an alternative method of accurate on-chip frequency generation in standard CMOS IC processes. This method exploits the thermal-diffusivity of silicon, the rate at which heat diffuses through a silicon substrate.  This is the first book describing thermal-diffusivity-based frequency references, including the complete theoretical methodology supported by practical realizations that prove the feasibility of the method.  Coverage also includes several circuit and system-level solutions for the analog electronic circuit design challenges faced.   ·         Surveys the state-of-the-art in all-silicon frequency references; ·         Examines the thermal properties of silicon as a solution for the challenge of on-chip accurate frequency generation; ·         Uses simplified modeling approaches that allow an electronics engineer easily to simulate the electrothermal elements; ·         Follows a top-down methodology in circuit design, in which system-level des...

  17. Discriminação de variedades de citros em imagens CCD/CBERS-2 Discrimination of citrus varieties using CCD/CBERS-2 satellite imagery

    Ieda Del'Arco Sanches

    2008-02-01

    Full Text Available O presente trabalho teve o objetivo de avaliar as imagens CCD/CBERS-2 quanto à possibilidade de discriminarem variedades de citros. A área de estudo localiza-se em Itirapina (SP e, para este estudo, foram utilizadas imagens CCD de três datas (30/05/2004, 16/08/2004 e 11/09/2004. Um modelo que integra os elementos componentes da cena citrícola sensoriada é proposto com o objetivo de explicar a variabilidade das respostas das parcelas de citros em imagens orbitais do tipo CCD/CBERS-2. Foram feitas classificações pelos algoritmos Isoseg e Maxver e, de acordo com o índice kappa, concluiu-se que é possível obterem-se exatidões qualificadas como muito boas, sendo que as melhores classificações foram conseguidas com imagens da estação seca.This paper was aimed at evaluating the possibility of discriminating citrus varieties in CCD imageries from CBERS-2 satellite ("China-Brazil Earth Resouces Satellite". The study area is located in Itirapina, São Paulo State. For this study, three CCD images from 2004 were acquired (May 30, August 16, and September 11. In order to acquire a better understanding and for explaining the variability of the spectral behavior of the citrus areas in orbital images (like as the CCD/CBERS-2 images a model that integrates the elements of the citrus scene is proposed and discussed. The images were classified by Isoseg and MaxVer classifiers. According to kappa index, it was possible to obtain classifications qualified as 'very good'. The best results were obtained with the images from the dry season.

  18. BVRI CCD photometry of the globular cluster NGC 6362

    Alcaino, G.; Liller, W.

    1986-01-01

    We have obtained 78 BVRI CCD frames with the 1.54 m Danish telescope at ESO, La Silla, and have constructed V vs B-V, V vs V-R, V vs R-I, V vs V-I, and V vs B-I color-magnitude diagrams in a 4' x 2X5 field of the globular cluster NGC 6362. From these five CMDs we find that the main-sequence turnoffs are all close to the same magnitude, namely V/sub TO/ = 18.75 +- 0.1, and the color turn- offs at B-V = 0.50 +- 0.02, V-R = 0.31 +- 0.02, R-I = 0.35 +- 0.02, V-I = 0.68 +- 0.02, and B-I = 1.18 +- 0.03. The magnitude difference between the turnoff and the horizontal branch for the five diagrams is ΔM/sub V/ = 3.40 +- 0.15 in excellent agreement with the value given by Sandage (1982). Using Y = 0.2, Z = 0.001 ([Fe/H] = -1.27), α = 1.65, a distance modulus of (m-M)/sub V/ = 14.74, and E(B-V) = 0.10, we find that the VandenBerg and Bell isochrones (1985) yield a consistent age for NGC 6362 in all colors indexes of 16 +- 1.5 x 10 9 yr. The solar distance to the cluster is 7.7 kpc and the galactic distance is 5.6 kpc assuming R 0 = 9 kpc

  19. A New CMOS Posicast Pre-shaper for Vibration Reduction of CMOS Op-Amps

    Rasoulzadeh, M.; Ghaznavi-Ghoushchi, M. B.

    2010-06-01

    Posicast-based control is a widely used method in vibration reduction of lightly damped oscillatory systems especially in mechanical fields. The target systems to apply Posicast method are the systems which are excited by pulse inputs. Using the Posicast idea, the input pulse is reshaped into a new pulse, which is called Posicast pulse. Applying the generated Posicast pulse reduces the undesired oscillatory manner of under-test systems. In this paper, a fully CMOS Pulse pre-shaper circuit for realization of Posicast command is proposed. Our design is based on delay-and-add approach for the incoming pulses. The delay is done via a modified Schmitt Trigger-like circuit. The adder circuit is implemented by a simple non-binary analog adder terminated by a passive element. Our proposed design has a reasonable flexibility in configuration of time delay and amplitude of the desired pulse-like shapes. The delay is controlled via the delay unit and the pre-shaped pulse's amplitudes are controlled by an analog adder unit. The overall system has 18 MOS transistors, one small capacitor, and one resistor. To verify the effectiveness of the recommended method, it is experienced on a real CMOS Op-Amp. HSPICE simulation results, on 0.25u technology, show a significant reduction on overshoot and settling time of the under-test Op-Amp. The mentioned reduction is more than 95% in overshoot and more than 60% in settling time of the system.

  20. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  1. Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits, Phase I

    National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

  2. CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

    An, S

    2001-01-01

    .... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

  3. Characterization of active CMOS pixel sensors on high resistive substrate

    Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

    2016-07-01

    Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  4. VLSI scaling methods and low power CMOS buffer circuit

    Sharma Vijay Kumar; Pattanaik Manisha

    2013-01-01

    Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

  5. Design and Fabrication of Vertically-Integrated CMOS Image Sensors

    Skorka, Orit; Joseph, Dileepan

    2011-01-01

    Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

  6. CMOS Cell Sensors for Point-of-Care Diagnostics

    Adiguzel, Yekbun; Kulah, Haluk

    2012-01-01

    The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

  7. A tilted fiber-optic plate coupled CCD detector for high resolution neutron imaging

    Kim, Jongyul; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Kim, Jongyul; Hwy, Limchang; Kim, Taejoo; Lee, Kyehong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Seungwook [Pusan National Univ., Pusan (Korea, Republic of)

    2013-05-15

    One of these efforts is that a tilted scintillator geometry and lens coupled CCD detector for neutron imaging system were used to improve spatial resolution in one dimension. The increased spatial resolution in one dimension was applied to fuel cell study. However, a lens coupled CCD detector has lower sensitivity than a fiber-optic plate coupled CCD detector due to light loss. In this research, a tilted detector using fiber-optic plate coupled CCD detector was developed to improve resolution and sensitivity. In addition, a tilted detector can prevent an image sensor from direct radiation damage. Neutron imaging has been used for fuel cell study, lithium ion battery study, and many scientific applications. High quality neutron imaging is demanded for more detailed studies of applications, and spatial resolution should be considered to get high quality neutron imaging. Therefore, there were many efforts to improve spatial resolution.

  8. Evaluation of the Accuracy of the Dark Frame Subtraction Method in CCD Image Processing

    Levesque, Martin P; Lelievre, Mario

    2007-01-01

    .... This method is frequently used for removing the image background gradient (a thermal artefact) in CCD images. This report demonstrates that this method may not be suitable for the detection of objects with very low signal-to-noise ratio...

  9. Researchers develop CCD image sensor with 20ns per row parallel readout time

    Bush, S

    2004-01-01

    "Scientists at the Rutherford Appleton Laboratory (RAL) in Oxfordshire have developed what they claim is the fastest CCD (charge-coupled device) image sensor, with a readout time which is 20ns per row" (1/2 page)

  10. The interaction of DNA gyrase with the bacterial toxin CcdB

    Kampranis, S C; Howells, A J; Maxwell, A

    1999-01-01

    CcdB is a bacterial toxin that targets DNA gyrase. Analysis of the interaction of CcdB with gyrase reveals two distinct complexes. An initial complex (alpha) is formed by direct interaction between GyrA and CcdB; this complex can be detected by affinity column and gel-shift analysis, and has...... of this initial complex with ATP in the presence of GyrB and DNA slowly converts it to a second complex (beta), which has a lower rate of ATP hydrolysis and is unable to catalyse supercoiling. The efficiency of formation of this inactive complex is dependent on the concentrations of ATP and CcdB. We suggest...

  11. Performance of an area variable MOS varicap weighted programmable CCD transversal filter

    Bhattacharyya, A.B.; Shankarnarayan, L.; Kapur, N.; Wallinga, Hans

    1981-01-01

    The performance of an electrically programmable CCD transversal filter (PTF) is presented in which tap-weight multiplication is performed by a novel and compact on chip voltage controlled area variable MOS varicap.

  12. CCD-based X-ray detectors for X-ray diffraction studies

    Ito, K.; Amemiya, Y.

    1999-01-01

    CCD-based X-ray detectors are getting to be used for X-ray diffraction studies especially in the studies where real time (automated) measurements and time-resolved measurements are required. Principles and designs of two typical types of CCD-based detectors are described; one is ths system in which x-ray image intensifiers are coupled to maximize the detective quantum efficiency for time-resolved measurements, and the other is the system in which tapered optical fibers are coupled for the reduction of the image into the CCD, which is optimized for automated measurements for protein crystallography. These CCD-based X-ray detectors have an image distortion and non-uniformity of response to be corrected by software. Correction schemes which we have developed are also described. (author)

  13. Software design of control system of CCD side-scatter lidar

    Kuang, Zhiqiang; Liu, Dong; Deng, Qian; Zhang, Zhanye; Wang, Zhenzhu; Yu, Siqi; Tao, Zongming; Xie, Chenbo; Wang, Yingjian

    2018-03-01

    Because of the existence of blind zone and transition zone, the application of backscattering lidar in near-ground is limited. The side-scatter lidar equipped with the Charge Coupled Devices (CCD) can separate the transmitting and receiving devices to avoid the impact of the geometric factors which is exited in the backscattering lidar and, detect the more precise near-ground aerosol signals continuously. Theories of CCD side-scatter lidar and the design of control system are introduced. The visible control of laser and CCD and automatic data processing method of the side-scatter lidar are developed by using the software of Visual C #. The results which are compared with the calibration of the atmospheric aerosol lidar data show that signals from the CCD side- scatter lidar are convincible.

  14. Colony Collapse Disorder (CCD) and bee age impact honey bee pathophysiology.

    vanEngelsdorp, Dennis; Traynor, Kirsten S; Andree, Michael; Lichtenberg, Elinor M; Chen, Yanping; Saegerman, Claude; Cox-Foster, Diana L

    2017-01-01

    Honey bee (Apis mellifera) colonies continue to experience high annual losses that remain poorly explained. Numerous interacting factors have been linked to colony declines. Understanding the pathways linking pathophysiology with symptoms is an important step in understanding the mechanisms of disease. In this study we examined the specific pathologies associated with honey bees collected from colonies suffering from Colony Collapse Disorder (CCD) and compared these with bees collected from apparently healthy colonies. We identified a set of pathological physical characteristics that occurred at different rates in CCD diagnosed colonies prior to their collapse: rectum distension, Malpighian tubule iridescence, fecal matter consistency, rectal enteroliths (hard concretions), and venom sac color. The multiple differences in rectum symptomology in bees from CCD apiaries and colonies suggest effected bees had trouble regulating water. To ensure that pathologies we found associated with CCD were indeed pathologies and not due to normal changes in physical appearances that occur as an adult bee ages (CCD colonies are assumed to be composed mostly of young bees), we documented the changes in bees of different ages taken from healthy colonies. We found that young bees had much greater incidences of white nodules than older cohorts. Prevalent in newly-emerged bees, these white nodules or cellular encapsulations indicate an active immune response. Comparing the two sets of characteristics, we determined a subset of pathologies that reliably predict CCD status rather than bee age (fecal matter consistency, rectal distension size, rectal enteroliths and Malpighian tubule iridescence) and that may serve as biomarkers for colony health. In addition, these pathologies suggest that CCD bees are experiencing disrupted excretory physiology. Our identification of these symptoms is an important first step in understanding the physiological pathways that underlie CCD and factors

  15. Modeling the impact of preflushing on CTE in proton irradiated CCD-based detectors

    Philbrick, R. H.

    2002-04-01

    A software model is described that performs a "real world" simulation of the operation of several types of charge-coupled device (CCD)-based detectors in order to accurately predict the impact that high-energy proton radiation has on image distortion and modulation transfer function (MTF). The model was written primarily to predict the effectiveness of vertical preflushing on the custom full frame CCD-based detectors intended for use on the proposed Kepler Discovery mission, but it is capable of simulating many other types of CCD detectors and operating modes as well. The model keeps track of the occupancy of all phosphorous-silicon (P-V), divacancy (V-V) and oxygen-silicon (O-V) defect centers under every CCD electrode over the entire detector area. The integrated image is read out by simulating every electrode-to-electrode charge transfer in both the vertical and horizontal CCD registers. A signal level dependency on the capture and emission of signal is included and the current state of each electrode (e.g., barrier or storage) is considered when distributing integrated and emitted signal. Options for performing preflushing, preflashing, and including mini-channels are available on both the vertical and horizontal CCD registers. In addition, dark signal generation and image transfer smear can be selectively enabled or disabled. A comparison of the charge transfer efficiency (CTE) data measured on the Hubble space telescope imaging spectrometer (STIS) CCD with the CTE extracted from model simulations of the STIS CCD show good agreement.

  16. Discussion on the fusing methods for HR and CCD images of CBERS

    Gao Zhangsheng; Zhao Yingjun

    2010-01-01

    CBERS-02B multi-spectral CCD data are different from HR panchromatic data in resolution, which causes difficulty in image fusion. With the method of Pansharping, HPF, Brovey transform, IHS transform, principal component transform, Gram Schmidt (GS) transform and wavelet transform, the authors have tested the fusion methods for CCD data and HR data of CBERS, and the fusion results are discussed and evaluated qualitatively and quantitatively. (authors)

  17. Colony Collapse Disorder (CCD and bee age impact honey bee pathophysiology.

    Dennis vanEngelsdorp

    Full Text Available Honey bee (Apis mellifera colonies continue to experience high annual losses that remain poorly explained. Numerous interacting factors have been linked to colony declines. Understanding the pathways linking pathophysiology with symptoms is an important step in understanding the mechanisms of disease. In this study we examined the specific pathologies associated with honey bees collected from colonies suffering from Colony Collapse Disorder (CCD and compared these with bees collected from apparently healthy colonies. We identified a set of pathological physical characteristics that occurred at different rates in CCD diagnosed colonies prior to their collapse: rectum distension, Malpighian tubule iridescence, fecal matter consistency, rectal enteroliths (hard concretions, and venom sac color. The multiple differences in rectum symptomology in bees from CCD apiaries and colonies suggest effected bees had trouble regulating water. To ensure that pathologies we found associated with CCD were indeed pathologies and not due to normal changes in physical appearances that occur as an adult bee ages (CCD colonies are assumed to be composed mostly of young bees, we documented the changes in bees of different ages taken from healthy colonies. We found that young bees had much greater incidences of white nodules than older cohorts. Prevalent in newly-emerged bees, these white nodules or cellular encapsulations indicate an active immune response. Comparing the two sets of characteristics, we determined a subset of pathologies that reliably predict CCD status rather than bee age (fecal matter consistency, rectal distension size, rectal enteroliths and Malpighian tubule iridescence and that may serve as biomarkers for colony health. In addition, these pathologies suggest that CCD bees are experiencing disrupted excretory physiology. Our identification of these symptoms is an important first step in understanding the physiological pathways that underlie CCD and

  18. A FORTRAN version implementation of block adjustment of CCD frames and its preliminary application

    Yu, Y.; Tang, Z.-H.; Li, J.-L.; Zhao, M.

    2005-09-01

    A FORTRAN version implementation of the block adjustment (BA) of overlapping CCD frames is developed and its flowchart is shown. The program is preliminarily applied to obtain the optical positions of four extragalactic radio sources. The results show that because of the increase in the number and sky coverage of reference stars the precision of optical positions with BA is improved compared with the single CCD frame adjustment.

  19. 77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

    2012-05-07

    ... INTERNATIONAL TRADE COMMISSION [Docket No. 2895] Certain CMOS Image Sensors and Products.... International Trade Commission has received a complaint entitled Certain CMOS Image Sensors and Products... importation, and the sale within the United States after importation of certain CMOS image sensors and...

  20. Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology

    Dutta, Satadal

    2017-01-01

    Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit (IC) technology is the most commercially successful platform in modern electronic and control systems. So called "smart power" technologies such as Bipolar CMOS DMOS (BCD), combine the computational power of CMOS with high voltage

  1. Design of area array CCD image acquisition and display system based on FPGA

    Li, Lei; Zhang, Ning; Li, Tianting; Pan, Yue; Dai, Yuming

    2014-09-01

    With the development of science and technology, CCD(Charge-coupled Device) has been widely applied in various fields and plays an important role in the modern sensing system, therefore researching a real-time image acquisition and display plan based on CCD device has great significance. This paper introduces an image data acquisition and display system of area array CCD based on FPGA. Several key technical challenges and problems of the system have also been analyzed and followed solutions put forward .The FPGA works as the core processing unit in the system that controls the integral time sequence .The ICX285AL area array CCD image sensor produced by SONY Corporation has been used in the system. The FPGA works to complete the driver of the area array CCD, then analog front end (AFE) processes the signal of the CCD image, including amplification, filtering, noise elimination, CDS correlation double sampling, etc. AD9945 produced by ADI Corporation to convert analog signal to digital signal. Developed Camera Link high-speed data transmission circuit, and completed the PC-end software design of the image acquisition, and realized the real-time display of images. The result through practical testing indicates that the system in the image acquisition and control is stable and reliable, and the indicators meet the actual project requirements.

  2. A Design and Development of Multi-Purpose CCD Camera System with Thermoelectric Cooling: Software

    S. H. Oh

    2007-12-01

    Full Text Available We present a software which we developed for the multi-purpose CCD camera. This software can be used on the all 3 types of CCD - KAF-0401E (768×512, KAF-1602E (15367times;1024, KAF-3200E (2184×1472 made in KODAK Co.. For the efficient CCD camera control, the software is operated with two independent processes of the CCD control program and the temperature/shutter operation program. This software is designed to fully automatic operation as well as manually operation under LINUX system, and is controled by LINUX user signal procedure. We plan to use this software for all sky survey system and also night sky monitoring and sky observation. As our results, the read-out time of each CCD are about 15sec, 64sec, 134sec for KAF-0401E, KAF-1602E, KAF-3200E., because these time are limited by the data transmission speed of parallel port. For larger format CCD, the data transmission is required more high speed. we are considering this control software to one using USB port for high speed data transmission.

  3. One method for HJ-1-A HSI and CCD data fusion

    Xiong, Wencheng; Shao, Yun; Shen, Wenming; Xiao, Rulin; Fu, Zhuo; Shi, Yuanli

    2014-01-01

    HJ-1-A satellite, developed by China independently, was equipped with two sensors of Hyper Spectral Imager (HSI) and multispectral sensor (CCD). In this paper, we examine the benefits of combining data from CCD data (high-spatial-resolution, low-spectral-resolution image) with HSI data (low -spatial-resolution, high -spectral-resolution image). Due to the same imaging time and similar spectral regime, the CCD and HSI data can be registered with each other well, and the difference between CCD and HSI data mainly is systematic bias. The approach we have been investigating compares the spectral information present in the multispectral image to the spectral content in the hyperspectral image, and derives a set of equations to approximately acquire the systematic bias between the two sensors. The systematic bias is then applied to the interpolated high-spectral CCD image to produce a fused product. This fused image has the spectral resolution of the hyperspectral image (HSI) and the spatial resolution of the multispectral image (CCD). It is capable of full exploitation as a hyperspectral image. We evaluate this technique using the data of Honghe wetland and show both good spectral and visual fidelity. An analysis of SAM classification test case shows good result when compared to original image. All in all, the approach we developed here provides a means for fusing data from HJ-1-A satellite to produce a spatial-resolution-enhanced hyperspectral data cube that can be further analyzed by spectral classification and detection algorithms

  4. Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

    Farès TOUNSI

    2009-09-01

    Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

  5. Small Pixel Hybrid CMOS X-ray Detectors

    Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

    2018-01-01

    Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

  6. Low-voltage CMOS operational amplifiers theory, design and implementation

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  7. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

  8. High-speed nonvolatile CMOS/MNOS RAM

    Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

    1979-01-01

    A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

  9. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Fangming Deng

    2014-05-01

    Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  10. A CMOS humidity sensor for passive RFID sensing applications.

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-05-16

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  11. VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

    Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

    2014-10-01

    This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

  12. Chromatic Modulator for a High-Resolution CCD or APS

    Hartley, Frank; Hull, Anthony

    2008-01-01

    A chromatic modulator has been proposed to enable the separate detection of the red, green, and blue (RGB) color components of the same scene by a single charge-coupled device (CCD), active-pixel sensor (APS), or similar electronic image detector. Traditionally, the RGB color-separation problem in an electronic camera has been solved by use of either (1) fixed color filters over three separate image detectors; (2) a filter wheel that repeatedly imposes a red, then a green, then a blue filter over a single image detector; or (3) different fixed color filters over adjacent pixels. The use of separate image detectors necessitates precise registration of the detectors and the use of complicated optics; filter wheels are expensive and add considerably to the bulk of the camera; and fixed pixelated color filters reduce spatial resolution and introduce color-aliasing effects. The proposed chromatic modulator would not exhibit any of these shortcomings. The proposed chromatic modulator would be an electromechanical device fabricated by micromachining. It would include a filter having a spatially periodic pattern of RGB strips at a pitch equal to that of the pixels of the image detector. The filter would be placed in front of the image detector, supported at its periphery by a spring suspension and electrostatic comb drive. The spring suspension would bias the filter toward a middle position in which each filter strip would be registered with a row of pixels of the image detector. Hard stops would limit the excursion of the spring suspension to precisely one pixel row above and one pixel row below the middle position. In operation, the electrostatic comb drive would be actuated to repeatedly snap the filter to the upper extreme, middle, and lower extreme positions. This action would repeatedly place a succession of the differently colored filter strips in front of each pixel of the image detector. To simplify the processing, it would be desirable to encode information on

  13. E-Beam Effects on CMOS Active Pixel Sensors

    Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

    2011-01-01

    Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

  14. An introduction to deep submicron CMOS for vertex applications

    Campbell, M; Cantatore, E; Faccio, F; Heijne, Erik H M; Jarron, P; Santiard, Jean-Claude; Snoeys, W; Wyllie, K

    2001-01-01

    Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.

  15. CMOS voltage references an analytical and practical perspective

    Kok, Chi-Wah

    2013-01-01

    A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

  16. A 205GHz Amplifier in 90nm CMOS Technology

    2017-03-01

    10.5dB power gain, Psat of -1.6dBm, and P1dB ≈ -5.8dBm in a standard 90nm CMOS process. Moreover, the design employs internal (layout-based) /external...other advantages, such as low- cost , reliability, and mixed-mode analog/digital chips, intensifying its usage in the mm-wave band [5]. CMOS has several... disadvantages at the higher frequency range with the worst case scenario happening when the device operates near its fmax. This is chiefly due to

  17. Single-chip RF communications systems in CMOS

    Olesen, Ole

    1997-01-01

    The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

  18. Two CMOS BGR using CM and DTMOST techniques

    Mohd-Yasin, F.; Teh, Y.K.; Choong, F.; Reaz, M.B.I.

    2009-06-01

    Two CMOS BGR using current mode (0.044mm 2 ) and Dynamic Threshold MOST (0.017mm 2 ) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating V DD 1.28V at 25 o C; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support V DD range up to 4V required by passive UHF RFID. (author)

  19. Application of CMOS Technology to Silicon Photomultiplier Sensors

    D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-01-01

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

  20. Linear CMOS RF power amplifiers a complete design workflow

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  1. CMOS sigma-delta converters practical design guide

    De la Rosa, Jose M

    2013-01-01

    A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

  2. CMOS-compatible photonic devices for single-photon generation

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  3. pnCCD for photon detection from near-infrared to X-rays

    Meidinger, Norbert; Andritschke, Robert; Hartmann, Robert; Herrmann, Sven; Holl, Peter; Lutz, Gerhard; Strueder, Lothar

    2006-01-01

    A pnCCD is a special type of charge-coupled device developed for spectroscopy and imaging of X-rays with high time resolution and quantum efficiency. Its most famous application is the operation on the XMM-Newton satellite, an X-ray astronomy mission that was launched by the European space agency in 1999. The excellent performance of the focal plane camera has been maintained for more than 6 years in orbit. The energy resolution in particular has shown hardly any degradation since launch. In order to satisfy the requirements of future X-ray astronomy missions as well as those of ground-based experiments, a new type of pnCCD has been developed. This 'frame-store pnCCD' shows an enhanced performance compared to the XMM-Newton type of pnCCD. Now, more options in device design and operation are available to tailor the detector to its respective application. Part of this concept is a programmable analog signal processor, which has been developed for the readout of the CCD signals. The electronic noise of the new detector has a value of only 2 electrons equivalent noise charge (ENC), which is less than half of the figure achieved for the XMM-Newton-type pnCCD. The energy resolution for the Mn-K α line at 5.9 keV is approximately 130 eV FWHM. We have close to 100% quantum efficiency for both low- and high-energy photon detection (e.g. the C-K line at 277 eV, and the Ge-K α line at 10 keV, respectively). Very high frame rates of 1000 images/s have been achieved due to the ultra-fast readout accomplished by the parallel architecture of the pnCCD and the analog signal processor. Excellent spectroscopic performance is shown even at the relatively high operating temperature of -25 deg. C that can be achieved by a Peltier cooler. The applications of the low-noise and fast pnCCD detector are not limited to the detection of X-rays. With an anti-reflective coating deposited on the photon entrance window, we achieve high quantum efficiency also for near-infrared and optical

  4. A Nordic project on high speed low power design in sub-micron CMOS technology for mobile phones

    Olesen, Ole

    circuit design is based on state-of-the-art CMOS technology (0.5µm and below) including circuits operating at 2GHz. CMOS technology is chosen, since a CMOS implementation is likely to be significantly cheaper than a bipolar or a BiCMOS solution, and it offers the possibility to integrate the predominantly...

  5. CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

    Ghafar-Zadeh, Ebrahim

    2010-01-01

    The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

  6. A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

    Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

    1993-01-01

    A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

  7. Characterization of a pnCCD for applications with synchrotron radiation

    Send, S., E-mail: send@physik.uni-siegen.de [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Abboud, A. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Hartmann, R.; Huth, M. [PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Leitenberger, W. [University of Potsdam, Department of Physics, Karl-Liebknecht-Straße 24/25, 14476 Potsdam (Germany); Pashniak, N. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); Schmidt, J. [PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Strüder, L. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany); PNSensor GmbH, Römerstraße 28, 80803 München (Germany); Max-Planck-Institut für extraterrestrische Physik, Giessenbachstraße, 85748 Garching (Germany); Pietsch, U. [University of Siegen, Department of Physics, Walter-Flex-Straße 3, 57068 Siegen (Germany)

    2013-05-21

    In this work we study the response of a pnCCD by means of X-ray spectroscopy in the energy range between 6 keV and 20 keV and by Laue diffraction techniques. The analyses include measurements of characteristic detector parameters like energy resolution, count rate capability and effects of different gain settings. The limit of a single photon counting operation in white beam X-ray diffraction experiments is discussed with regard to the occurrence of pile-up events, for which the energy information about individual photons is lost. In case of monochromatic illumination the pnCCD can be used as a fast conventional CCD with a charge handling capacity (CHC) of about 300,000 electrons per pixel. If the CHC is exceeded, any surplus charge will spill to neighboring pixels perpendicular to the transfer direction due to electrostatic repulsion. The possibilities of increasing the number of storable electrons are investigated for different voltage settings by exposing a single pixel with X-rays generated by a microfocus X-ray source. The pixel binning mode is tested as an alternative approach that enables a pnCCD operation with significantly shorter readout times. -- Highlights: ► The pnCCD acts as a four-dimensional detector for white X-rays. ► Its performance for applications with synchrotron radiation is investigated. ► The pnCCD can be used for single photon counting and photon integration. ► The operation mode depends on the local frequencies of pile-up events. ► The pnCCD can be optimized for X-ray spectroscopy and X-ray imaging.

  8. Construction, characterization and evaluation of the protective efficacy of the Streptococcus suis double mutant strain ΔSsPep/ΔSsPspC as a live vaccine candidate in mice.

    Hu, Jin; You, Wujin; Wang, Bin; Hu, Xueying; Tan, Chen; Liu, Jinlin; Chen, Huanchun; Bei, Weicheng

    2015-01-01

    Streptococcus suis serotype 2 (S. suis 2) causes sepsis and meningitis in piglets and humans, and results in one of the most serious bacterial diseases affecting the production of commercial pigs around the world. Due to the failure of the current inactivated vaccine to protect against the disease, development of a new attenuated live vaccine against S. suis 2 by deleting essential virulence factors is urgently needed. We have previously reported the construction and characterization of an SsPep single gene deletion mutant strain ΔSsPep based on S. suis 2. Our previous results have shown that SsPep plays a critical role in the pathogenesis of S. suis 2. In this study, a precisely defined double-deletion mutant ΔSsPep/ΔSsPspC of S. suis 2 without antibiotic-resistance markers was constructed based on ΔSsPep, and the levels of virulence of the wild-type (WT) and ΔSsPep/ΔSsPspC were compared in a mouse experimental infection model. We demonstrated that the double mutant ΔSsPep/ΔSsPspC was less virulent than the WT, and could induce a noticeable antibody response. Analysis of IgG subclasses (IgG1 and IgG2a) indicated that both Th1 and Th2 responses were induced by ΔSsPep/ΔSsPspC, although the IgG2a (Th1) response predominated over the IgG1 (Th2) response. Moreover, ΔSsPep/ΔSsPspC could confer 90% protective efficacy against challenge with a lethal dose of fully virulent S. suis 2. Taken together, these data demonstrate that ΔSsPep/ΔSsPspC can be used as an effective live vaccine and provide a novel strategy against infection of S. suis 2. Copyright © 2014 Elsevier GmbH. All rights reserved.

  9. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  10. Thermal-Diffusivity-Based Frequency References in Standard CMOS

    Kashmiri, S.M.

    2012-01-01

    In recent years, a lot of research has been devoted to the realization of accurate integrated frequency references. A thermal-diffusivity-based (TD) frequency reference provides an alternative method of on-chip frequency generation in standard CMOS technology. A frequency-locked loop locks the

  11. Photon imaging using post-processed CMOS chips

    Melai, J.

    2010-01-01

    This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic

  12. CMOS technology and current-feedback op-amps

    Bruun, Erik

    1993-01-01

    Some of the problems related to the application of CMOS technology to current-feedback operational amplifiers (CFB op-amps) are identified. Problems caused by the low device transconductance and by the absence of matching between p-channel and n-channel transistors are examined, and circuit...

  13. Integrated imaging sensor systems with CMOS active pixel sensor technology

    Yang, G.; Cunningham, T.; Ortiz, M.; Heynssens, J.; Sun, C.; Hancock, B.; Seshadri, S.; Wrigley, C.; McCarty, K.; Pain, B.

    2002-01-01

    This paper discusses common approaches to CMOS APS technology, as well as specific results on the five-wire programmable digital camera-on-a-chip developed at JPL. The paper also reports recent research in the design, operation, and performance of APS imagers for several imager applications.

  14. A CMOS rail-to-rail linear VI-converter

    Vervoort, P.P.; Vervoort, P.P.; Wassenaar, R.F.

    1995-01-01

    A linear CMOS VI-converter operating in strong inversion with a common-mode input range from the negative to the positive supply rail is presented. The circuit consists of three linear VI-converters based on the difference of squares principle. Two of these perform the actual V to I conversion,

  15. An efficient CMOS bridging fault simulator with SPICE accuracy

    Di, C.; Jess, J.A.G.

    1996-01-01

    This paper presents an alternative modeling and simulation method for CMOS bridging faults. The significance of the method is the introduction of a set of generic-bridge tables which characterize the bridged outputs for each bridge and a set of generic-cell tables which characterize how each cell

  16. Characterisation of a CMOS charge transfer device for TDI imaging

    Rushton, J.; Holland, A.; Stefanov, K.; Mayer, F.

    2015-01-01

    The performance of a prototype true charge transfer imaging sensor in CMOS is investigated. The finished device is destined for use in TDI applications, especially Earth-observation, and to this end radiation tolerance must be investigated. Before this, complete characterisation is required. This work starts by looking at charge transfer inefficiency and then investigates responsivity using mean-variance techniques

  17. Radiation response of high speed CMOS integrated circuits

    Yue, H.; Davison, D.; Jennings, R.F.; Lothongkam, P.; Rinerson, D.; Wyland, D.

    1987-01-01

    This paper studies the total dose and dose rate radiation response of the FCT family of high speed CMOS integrated circuits. Data taken on the devices is used to establish the dominant failure modes, and this data is further analyzed using one-sided tolerance factors for normal distribution statistical analysis

  18. A toroidal inductor integrated in a standard CMOS process

    Vandi, Luca; Andreani, Pietro; Temporiti, Enrico

    2007-01-01

    This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches...

  19. Design for manufacturability and yield for nano-scale CMOS

    Chiang, Charles C

    2007-01-01

    Talks about the various aspects of manufacturability and yield in a nano-CMOS process and how to address each aspect at the proper design step starting with the design and layout of standard cells. This book is suitable for practicing IC designer and for graduate students intent on having a career in IC design or in EDA tool development.

  20. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

    2003-01-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

  1. First experimental results on CMOS Integrated Nickel Electroplated Resonators

    Yalcinkaya, Arda Deniz; Hansen, Ole

    2004-01-01

    This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electri...

  2. High performance flexible CMOS SOI FinFETs

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  3. CMOS-based avalanche photodiodes for direct particle detection

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  4. Temperature Sensors Integrated into a CMOS Image Sensor

    Abarca Prouza, A.N.; Xie, S.; Markenhof, Jules; Theuwissen, A.J.P.

    2017-01-01

    In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is needed. The test image sensor consists of

  5. High-temperature complementary metal oxide semiconductors (CMOS)

    McBrayer, J.D.

    1979-10-01

    Silicon CMOS devices were studied, tested, and evaluated at high temperatures to determine processing, geometric, operating characteristics, and stability parameters. After more than 1000 hours at 300 0 C, most devices showed good stability, reliability, and operating characteristics. Processing and geometric parameters were evaluated and optimization steps discussed

  6. A CMOS image sensor with row and column profiling means

    Xie, N.; Theuwissen, A.J.P.; Wang, X.; Leijtens, J.A.P.; Hakkesteegt, H.; Jansen, H.

    2008-01-01

    This paper describes the implementation and firstmeasurement results of a new way that obtains row and column profile data from a CMOS Image Sensor, which is developed for a micro-Digital Sun Sensor (μDSS).The basic profiling action is achieved by the pixels with p-type MOS transistors which realize

  7. CMOS Active-Pixel Image Sensor With Simple Floating Gates

    Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

    1996-01-01

    Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

  8. Design of a CMOS temperature sensor with current output

    Kolling, A.; Kölling, Arjan; Bak, Frans; Bergveld, Piet; Seevinck, E.; Seevinck, Evert

    1990-01-01

    In this paper a CMOS temperature-to-current converter is presented of which the output current is the difference between a PTC current and an NTC current. The PTC current is derived from a PTAT cell, while the NTC current is derived from a threshold voltage reference source. It is shown that this

  9. A CMOS four-quadrant analog current multiplier

    Wiegerink, Remco J.

    1991-01-01

    A CMOS four-quadrant analog current multiplier is described. The circuit is based on the square-law characteristic of an MOS transistor and is insensitive to temperature and process variations. The circuit is insensitive to the body effect so it is not necessary to place transistors in individual

  10. A novel multi-actuation CMOS RF MEMS switch

    Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

    2008-12-01

    This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

  11. Contact CMOS imaging of gaseous oxygen sensor array.

    Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

    2011-10-01

    We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

  12. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

  13. An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

    Mohammad Reza Shokrani

    2014-01-01

    Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  14. Investigation of Unsteady Pressure-Sensitive Paint (uPSP) and a Dynamic Loads Balance to Predict Launch Vehicle Buffet Environments

    Schuster, David M.; Panda, Jayanta; Ross, James C.; Roozeboom, Nettie H.; Burnside, Nathan J.; Ngo, Christina L.; Kumagai, Hiro; Sellers, Marvin; Powell, Jessica M.; Sekula, Martin K.; hide

    2016-01-01

    This NESC assessment examined the accuracy of estimating buffet loads on in-line launch vehicles without booster attachments using sparse unsteady pressure measurements. The buffet loads computed using sparse sensor data were compared with estimates derived using measurements with much higher spatial resolution. The current method for estimating launch vehicle buffet loads is through wind tunnel testing of models with approximately 400 unsteady pressure transducers. Even with this relatively large number of sensors, the coverage can be insufficient to provide reliable integrated unsteady loads on vehicles. In general, sparse sensor spacing requires the use of coherence-length-based corrections in the azimuthal and axial directions to integrate the unsteady pressures and obtain reasonable estimates of the buffet loads. Coherence corrections have been used to estimate buffet loads for a variety of launch vehicles with the assumption methodology results in reasonably conservative loads. For the Space Launch System (SLS), the first estimates of buffet loads exceeded the limits of the vehicle structure, so additional tests with higher sensor density were conducted to better define the buffet loads and possibly avoid expensive modifications to the vehicle design. Without the additional tests and improvements to the coherence-length analysis methods, there would have been significant impacts to the vehicle weight, cost, and schedule. If the load estimates turn out to be too low, there is significant risk of structural failure of the vehicle. This assessment used a combination of unsteady pressure-sensitive paint (uPSP), unsteady pressure transducers, and a dynamic force and moment balance to investigate the integration schemes used with limited unsteady pressure data by comparing them with direct integration of extremely dense fluctuating pressure measurements. An outfall of the assessment was to evaluate the potential of using the emerging uPSP technique in a production

  15. Phase shifting white light interferometry using colour CCD for optical metrology and bio-imaging applications

    Upputuri, Paul Kumar; Pramanik, Manojit

    2018-02-01

    Phase shifting white light interferometry (PSWLI) has been widely used for optical metrology applications because of their precision, reliability, and versatility. White light interferometry using monochrome CCD makes the measurement process slow for metrology applications. WLI integrated with Red-Green-Blue (RGB) CCD camera is finding imaging applications in the fields optical metrology and bio-imaging. Wavelength dependent refractive index profiles of biological samples were computed from colour white light interferograms. In recent years, whole-filed refractive index profiles of red blood cells (RBCs), onion skin, fish cornea, etc. were measured from RGB interferograms. In this paper, we discuss the bio-imaging applications of colour CCD based white light interferometry. The approach makes the measurement faster, easier, cost-effective, and even dynamic by using single fringe analysis methods, for industrial applications.

  16. High performance CCD camera system for digitalisation of 2D DIGE gels.

    Strijkstra, Annemieke; Trautwein, Kathleen; Roesler, Stefan; Feenders, Christoph; Danzer, Daniel; Riemenschneider, Udo; Blasius, Bernd; Rabus, Ralf

    2016-07-01

    An essential step in 2D DIGE-based analysis of differential proteome profiles is the accurate and sensitive digitalisation of 2D DIGE gels. The performance progress of commercially available charge-coupled device (CCD) camera-based systems combined with light emitting diodes (LED) opens up a new possibility for this type of digitalisation. Here, we assessed the performance of a CCD camera system (Intas Advanced 2D Imager) as alternative to a traditionally employed, high-end laser scanner system (Typhoon 9400) for digitalisation of differential protein profiles from three different environmental bacteria. Overall, the performance of the CCD camera system was comparable to the laser scanner, as evident from very similar protein abundance changes (irrespective of spot position and volume), as well as from linear range and limit of detection. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. The development of large-aperture test system of infrared camera and visible CCD camera

    Li, Yingwen; Geng, Anbing; Wang, Bo; Wang, Haitao; Wu, Yanying

    2015-10-01

    Infrared camera and CCD camera dual-band imaging system is used in many equipment and application widely. If it is tested using the traditional infrared camera test system and visible CCD test system, 2 times of installation and alignment are needed in the test procedure. The large-aperture test system of infrared camera and visible CCD camera uses the common large-aperture reflection collimator, target wheel, frame-grabber, computer which reduces the cost and the time of installation and alignment. Multiple-frame averaging algorithm is used to reduce the influence of random noise. Athermal optical design is adopted to reduce the change of focal length location change of collimator when the environmental temperature is changing, and the image quality of the collimator of large field of view and test accuracy are also improved. Its performance is the same as that of the exotic congener and is much cheaper. It will have a good market.

  18. A fluorescent screen + CCD system for quality assurance of therapeutic scanned ion beams

    Takeshita, E., E-mail: eriuli@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Furukawa, T., E-mail: t_furu@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Inaniwa, T., E-mail: taku@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Sato, S., E-mail: shin_s@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Himukai, T., E-mail: himukai@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Shirai, T., E-mail: t_shirai@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan); Noda, K., E-mail: noda_k@nirs.go.jp [National Institute of Radiological Sciences, Chiba (Japan)

    2011-12-15

    A fluorescent screen + a charge coupled device (CCD) system were developed to verify the performance of scanned ion beams at the HIMAC. The fluorescent light from the screen is observed by the CCD camera. Two-dimensional fields, produced by the scanning process, i.e., the position and the size of the beam for each scan, represent of the important issues in scanning irradiation. In the developed system, the two-dimensional relative fluence and the flatness of the irradiation field were measured in a straightforward technique from the luminance distribution on the screen. The position and the size of the beams were obtained from centroid computation results of the brightness. By the good sensitivity and spatial resolution of the fluorescent screen + CCD system, the scanned ion beams were verified as the measurements at the HIMAC prototype scanning system.

  19. A fluorescent screen + CCD system for quality assurance of therapeutic scanned ion beams

    Takeshita, E.; Furukawa, T.; Inaniwa, T.; Sato, S.; Himukai, T.; Shirai, T.; Noda, K.

    2011-12-01

    A fluorescent screen + a charge coupled device (CCD) system were developed to verify the performance of scanned ion beams at the HIMAC. The fluorescent light from the screen is observed by the CCD camera. Two-dimensional fields, produced by the scanning process, i.e., the position and the size of the beam for each scan, represent of the important issues in scanning irradiation. In the developed system, the two-dimensional relative fluence and the flatness of the irradiation field were measured in a straightforward technique from the luminance distribution on the screen. The position and the size of the beams were obtained from centroid computation results of the brightness. By the good sensitivity and spatial resolution of the fluorescent screen + CCD system, the scanned ion beams were verified as the measurements at the HIMAC prototype scanning system.

  20. Measurement of phase function of aerosol at different altitudes by CCD Lidar

    Sun, Peiyu; Yuan, Ke'e.; Yang, Jie; Hu, Shunxing

    2018-02-01

    The aerosols near the ground are closely related to human health and climate change, the study on which has important significance. As we all know, the aerosol is inhomogeneous at different altitudes, of which the phase function is also different. In order to simplify the retrieval algorithm, it is usually assumed that the aerosol is uniform at different altitudes, which will bring measurement error. In this work, an experimental approach is demonstrated to measure the scattering phase function of atmospheric aerosol particles at different heights by CCD lidar system, which could solve the problem of the traditional CCD lidar system in assumption of phase function. The phase functions obtained by the new experimental approach are used to retrieve the aerosol extinction coefficient profiles. By comparison of the aerosol extinction coefficient retrieved by Mie-scattering aerosol lidar and CCD lidar at night, the reliability of new experimental approach is verified.

  1. Application of the CCD Fabry-Perot Annular Summing Technique to Thermospheric O(1)D.

    Coakley, Monica Marie

    1995-01-01

    This work will detail the verification of the advantages of the Fabry-Perot charge coupled device (CCD) annular summing technique, the development of the technique for analysis of daysky spectra, and the implications of the resulting spectra for neutral temperature and wind measurements in the daysky thermosphere. The daysky spectral feature of interest is the bright (1 kilo-Rayleigh) thermospheric (OI) emission at 6300 A which had been observed in the nightsky in order to determine winds and temperatures in the vicinity of the altitude of 250 km. In the daysky, the emission line sits on top of a bright Rayleigh scattered continuum background which significantly complicates the observation. With a triple etalon Fabry-Perot spectrometer, the continuum background can be reduced while maintaining high throughput and high resolution. The inclusion of a CCD camera results in significant savings in integration time over the two more standard scanning photomultiplier systems that have made the same wind and temperature measurements in the past. A comparable CCD system can experience an order of magnitude savings in integration time over a PMT system. Laboratory and field tests which address the advantages and limitations of both the Fabry-Perot CCD annular summing technique and the daysky CCD imaging are included in Chap. 2 and Chap. 3. With a sufficiently large throughput associated with the spectrometer and a CCD detector, rapid observations (~4 minute integrations) can be made. Extraction of the line width and line center from the daysky near-continuum background is complicated compared to the nightsky case, but possible. Methods of fitting the line are included in Chap. 4. The daysky O ^1D temperatures are consistent with a lower average emission height than predicted by models. The data and models are discussed in Chap. 5. Although some discrepancies exist between resulting temperatures and models, the observations indicate the potential for other direct measurements

  2. Deflection control system for prestressed concrete bridges by CCD camera. CCD camera ni yoru prestressed concrete kyo no tawami kanri system

    Noda, Y.; Nakayama, Y.; Arai, T. (Kawada Construction Co. Ltd., Tokyo (Japan))

    1994-03-15

    For the long-span prestressed concrete bridge (continuous box girder and cable stayed bridge), the design and construction control becomes increasingly complicated as construction proceeds because of its cyclic works. This paper describes the method and operation of an automatic levelling module using CCD camera and the experimental results by this system. For this automatic levelling system, the altitude can be automatically measured by measuring the center location of gravity of the target on the bridge surface using CCD camera. The present deflection control system developed compares the measured value by the automatic levelling system with the design value obtained by the design calculation system, and manages them. From the real-time continuous measurement for the long term, in which the CCD camera was set on the bridge surface, it was found that the stable measurement accuracy can be obtained. Successful application of this system demonstrates that the system is an effective and efficient construction aid. 11 refs., 19 figs., 1 tab.

  3. Construction of a photochemical reactor combining a CCD spectrophotometer and a LED radiation source.

    Gombár, Melinda; Józsa, Éva; Braun, Mihály; Ősz, Katalin

    2012-10-01

    An inexpensive photoreactor using LED light sources and a fibre-optic CCD spectrophotometer as a detector was built by designing a special cell holder for standard 1.000 cm cuvettes. The use of this device was demonstrated by studying the aqueous photochemical reaction of 2,5-dichloro-1,4-benzoquinone. The developed method combines the highly quantitative data collection of CCD spectrophotometers with the possibility of illuminating the sample independently of the detecting light beam, which is a substantial improvement of the method using diode array spectrophotometers as photoreactors.

  4. Computer-aided diagnosis of pneumoconiosis abnormalities extracted from chest radiographs scanned with a CCD scanner

    Abe, Koji; Minami, Masahide; Nakamura, Munehiro

    2011-01-01

    This paper presents a computer-aided diagnosis for pneumoconiosis radiographs obtained with a common charge-coupled devices (CCD) scanner. Since the current computer-aided diagnosis systems of pneumoconiosis are not practical for medical doctors due to high costs of usage for a special scanner, we propose a novel system which measures abnormalities of pneumoconiosis from lung images obtained with a common CCD scanner. Experimental results of discriminations between normal and abnormal cases for 56 right-lung images including 6 standard pneumoconiosis images have shown that the proposed abnormalities are well extracted according to the standards of pneumoconiosis categories. (author)

  5. New low noise CCD cameras for Pi-of-the-Sky project

    Kasprowicz, G.; Czyrkowski, H.; Dabrowski, R.; Dominik, W.; Mankiewicz, L.; Pozniak, K.; Romaniuk, R.; Sitek, P.; Sokolowski, M.; Sulej, R.; Uzycki, J.; Wrochna, G.

    2006-10-01

    Modern research trends require observation of fainter and fainter astronomical objects on large areas of the sky. This implies usage of systems with high temporal and optical resolution with computer based data acquisition and processing. Therefore Charge Coupled Devices (CCD) became so popular. They offer quick picture conversion with much better quality than film based technologies. This work is theoretical and practical study of the CCD based picture acquisition system. The system was optimized for "Pi of The Sky" project. But it can be adapted to another professional astronomical researches. The work includes issue of picture conversion, signal acquisition, data transfer and mechanical construction of the device.

  6. Measuring a narrow Bessel beam spot by scanning a charge-coupled device (CCD) pixel

    Tiwari, S K; Ram, S P; Jayabalan, J; Mishra, S R

    2010-01-01

    By scanning a charge-coupled device (CCD) camera transverse to the beam axis and observing the variation in counts on a marked pixel, we demonstrate that we can measure a laser beam spot size smaller than the size of the CCD-pixel. We find this method particularly attractive for measuring the size of central spot of a Bessel beam, for which the established scanning knife-edge method does not work appropriately because of the large contribution of the rings surrounding the central spot to the signal

  7. Development of online cable eccentricity detection system based on X-ray CCD

    Chen Jianzhen; Li Bin; Wei Kaixia; Guo Lanying; Qu Guopu

    2008-01-01

    An improved technology of online cable eccentricity detection, based on X-ray CCD, greatly improves the measuring precision and the responding speed. The theory of eccentricity measuring based on X-ray CCD, and the structure of an apparatus are described. The apparatus is composed of scanning drive subsystem, X-ray generation components, data acquiring subsystem and high performance computer system. The measuring results are also presented. The features of this cable eccentricity detection technology are compared with the features of other technologies. (authors)

  8. A CCD-based area detector for X-ray crystallography using synchrotron and laboratory sources

    Phillips, W.C.; Li Youli; Stanton, M.; Xie Yuanhui; O'Mara, D.; Kalata, K.

    1993-01-01

    The design and characteristics of a CCD-based area detector suitable for X-ray crystallographic studies using both synchrotron and laboratory sources are described. The active area is 75 mm in diameter, the FWHM of the point response function is 0.20 mm, and for Bragg peaks the dynamic range is 900 and the DQE ∼0.3. The 1320x1035-pixel Kodak CCD is read out into an 8 Mbyte memory system in 0.14 s and digitized to 12 bits. X-ray crystallographic data collected at the NSLS synchrotron from cubic insulin crystals are presented. (orig.)

  9. Atmospheric radiation environment analyses based-on CCD camera at various mountain altitudes and underground sites

    Li Cavoli Pierre

    2016-01-01

    Full Text Available The purpose of this paper is to discriminate secondary atmospheric particles and identify muons by measuring the natural radiative environment in atmospheric and underground locations. A CCD camera has been used as a cosmic ray sensor. The Low Noise Underground Laboratory of Rustrel (LSBB, France gives the access to a unique low-noise scientific environment deep enough to ensure the screening from the neutron and proton radiative components. Analyses of the charge levels in pixels of the CCD camera induced by radiation events and cartographies of the charge events versus the hit pixel are proposed.

  10. CMOS VLSI Active-Pixel Sensor for Tracking

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  11. High-Voltage-Input Level Translator Using Standard CMOS

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  12. Applications of Si/SiGe heterostructures to CMOS devices

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  13. Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

    Shaikh, Sohail F.

    2017-01-17

    The state-of-the-art electronics technology has been an integral part of modern advances. The prevalent rise of the mobile device and computational technology in the age of information technology offers exciting applications that are attributed to sophisticated, enormously reliable, and most mature CMOS-based electronics. We are accustomed to high performance, cost-effective, multifunctional, and energy-efficient scaled electronics. However, they are rigid, bulky, and brittle. The convolution of flexibility and stretchability in electronics for emerging Internet of Everything application can unleash smart application horizon in unexplored areas, such as robotics, healthcare, smart cities, transport, and entertainment systems. While flexible and stretchable device themes are being remarkably chased, the realization of the fully compliant electronic system is unaddressed. Integration of data processing, storage, communication, and energy management devices complements a compliant system. Here, a comprehensive review is presented on necessity and design criteria for freeform (physically flexible and stretchable) compliant high-performance CMOS electronic systems.

  14. Nanometer CMOS Sigma-Delta Modulators for Software Defined Radio

    Morgado, Alonso; Rosa, José M

    2012-01-01

    This book presents innovative solutions for the implementation of Sigma-Delta Modulation (SDM) based Analog-to-Digital Conversion (ADC), required for the next generation of wireless hand-held terminals. These devices will be based on the so-called multistandard transceiver chipsets, integrated in nanometer CMOS technologies. One of the most challenging and critical parts in such transceivers is the analog-digital interface, because of the assorted signal bandwidths and dynamic ranges that can be required to handle the A/D conversion for several operation modes.   This book describes new adaptive and reconfigurable SDM ADC topologies, circuit strategies and synthesis methods, specially suited for multi-standard wireless telecom systems and future Software-defined-radios (SDRs) integrated in nanoscale CMOS. It is a practical book, going from basic concepts to the frontiers of SDM architectures and circuit implementations, which are explained in a didactical and systematic way. It gives a comprehensive overview...

  15. Micromachined high-performance RF passives in CMOS substrate

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-01-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

  16. Future challenges in single event effects for advanced CMOS technologies

    Guo Hongxia; Wang Wei; Luo Yinhong; Zhao Wen; Guo Xiaoqiang; Zhang Keying

    2010-01-01

    SEE have became a substantial Achilles heel for the reliability of space-based advanced CMOS technologies with features size downscaling. Future space and defense systems require identification and understanding of single event effects to develop hardening approaches for advanced technologies, including changes in device geometry and materials affect energy deposition, charge collection,circuit upset, parametric degradation devices. Topics covered include the impact of technology scaling on radiation response, including single event transients in high speed digital circuits, evidence for single event effects caused by proton direct ionization, and the impact for SEU induced by particle energy effects and indirect ionization. The single event effects in CMOS replacement technologies are introduced briefly. (authors)

  17. A CMOS integrated timing discriminator circuit for fast scintillation counters

    Jochmann, M.W.

    1998-01-01

    Based on a zero-crossing discriminator using a CR differentiation network for pulse shaping, a new CMOS integrated timing discriminator circuit is proposed for fast (t r ≥ 2 ns) scintillation counters at the cooler synchrotron COSY-Juelich. By eliminating the input signal's amplitude information by means of an analog continuous-time divider, a normalized pulse shape at the zero-crossing point is gained over a wide dynamic input amplitude range. In combination with an arming comparator and a monostable multivibrator this yields in a highly precise timing discriminator circuit, that is expected to be useful in different time measurement applications. First measurement results of a CMOS integrated logarithmic amplifier, which is part of the analog continuous-time divider, agree well with the corresponding simulations. Moreover, SPICE simulations of the integrated discriminator circuit promise a time walk well below 200 ps (FWHM) over a 40 dB input amplitude dynamic range

  18. PERFORMANCE OF LEAKAGE POWER MINIMIZATION TECHNIQUE FOR CMOS VLSI TECHNOLOGY

    T. Tharaneeswaran

    2012-06-01

    Full Text Available Leakage power of CMOS VLSI Technology is a great concern. To reduce leakage power in CMOS circuits, a Leakage Power Minimiza-tion Technique (LPMT is implemented in this paper. Leakage cur-rents are monitored and compared. The Comparator kicks the charge pump to give body voltage (Vbody. Simulations of these circuits are done using TSMC 0.35µm technology with various operating temper-atures. Current steering Digital-to-Analog Converter (CSDAC is used as test core to validate the idea. The Test core (eg.8-bit CSDAC had power consumption of 347.63 mW. LPMT circuit alone consumes power of 6.3405 mW. This technique results in reduction of leakage power of 8-bit CSDAC by 5.51mW and increases the reliability of test core. Mentor Graphics ELDO and EZ-wave are used for simulations.

  19. Pixel front-end development in 65 nm CMOS technology

    Havránek, M; Hemperek, T; Kishishita, T; Krüger, H; Wermes, N

    2014-01-01

    Luminosity upgrade of the LHC (HL-LHC) imposes severe constraints on the detector tracking systems in terms of radiation hardness and capability to cope with higher hit rates. One possible way of keeping track with increasing luminosity is the usage of more advanced technologies. Ultra deep sub-micron CMOS technologies allow a design of complex and high speed electronics with high integration density. In addition, these technologies are inherently radiation hard. We present a prototype of analog pixel front-end integrated circuit designed in 65 nm CMOS technology with applications oriented towards the ATLAS Pixel Detector upgrade. The aspects of ultra deep sub-micron design and performance of the analog pixel front-end circuits will be discussed

  20. An improved standard total dose test for CMOS space electronics

    Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Pease, R.L.

    1989-01-01

    The postirradiation response of hardened and commercial CMOS devices is investigated as a function of total dose, dose rate, and annealing time and temperature. Cobalt-60 irradiation at ≅ 200 rad(SiO 2 )/s followed by a 1-week 100 degrees C biased anneal and testing is shown to be an effective screen of hardened devices for space use. However, a similar screen and single-point test performed after Co-60 irradiation and elevated temperature anneal cannot be generally defined for commercial devices. In the absence of detailed knowledge about device and circuit radiation response, a two-point standard test is proposed to ensure space surviability of CMOS circuits: a Co-60 irradiation and test to screen against oxide-trapped charge related failures, and an additional rebound test to screen against interface-trap related failures. Testing implications for bipolar technologies are also discussed

  1. Latch-up control in CMOS integrated circuits

    Ochoa, A. Jr.; Estreich, D.B.; Dawes, W.R. Jr.

    1979-01-01

    The potential for latch-up, a pnpn self-sustaining low impedance state, is inherent in standard bulk CMOS structures. Under normal bias, the parasitic SCR is in its blocking state, but if subjected to a high-voltage spike or if exposed to an ionizing environment, triggering may occur. Prevention of latch-up has been achieved by lifetime control methods such as gold doping or neutron irradiation and by modifying the structure with buried layers. Smaller, next-generation CMOS designs will enhance parasitic action making the problem a concern for other than military or space applications alone. Latch-up control methods presently employed are surveyed. Their adaptability to VSLI designs is analyzed

  2. SEU-hardened design for shift register in CMOS APS

    Meng Liya; Liu Zedong; Hu Dajiang; Wang Qingxiang

    2012-01-01

    The inverter-based quasi-static shift register in CMOS APS, which is used in ionizing radiation environment, is susceptible to single event upset (SEU), thus affecting the CMOS active pixel sensor (APS) working. The analysis of the SEU for inverter-based quasi-static shift register concludes that the most sensitive node to single event transient (SET) exists in the input of inverter, and the threshold voltage and capacitance of input node of inverter determine the capability of anti-SEU. A new method was proposed, which replaced the inverter with Schmitt trigger in shift register. Because there is a hysteresis on voltage transfer characteristic of Schmitt trigger, there is high flip threshold, thus better capability of anti-SEU can be achieved. Simulation results show that the anti-SEU capability of Schmitt trigger is 10 times more than that of inverter. (authors)

  3. Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

    Nahar, Shamsun; Shafee, Marwah; Blin, Stéphane; Pénarier, Annick; Nouvel, Philippe; Coquillat, Dominique; Safwa, Amr M. E.; Knap, Wojciech; Hella, Mona M.

    2016-11-01

    Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.

  4. Smart CMOS image sensor for lightning detection and imaging.

    Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

    2013-03-01

    We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

  5. A passive CMOS pixel sensor for the high luminosity LHC

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Janssen, Jens; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    The high luminosity upgrade for the Large Hadron Collider at CERN requires a new inner tracking detector for the ATLAS experiment. About 200 m{sup 2} of silicon detectors are needed demanding new, low cost hybridization- and sensor technologies. One promising approach is to use commercial CMOS technologies to produce the passive sensor for a hybrid pixel detector design. In this talk a fully functional prototype of a 300 μm thick, backside biased CMOS pixel sensor in 150 nm LFoundry technology is presented. The sensor is bump bonded to the ATLAS FE-I4 with AC and DC coupled pixels. Results like leakage current, noise performance, and charge collection efficiency are presented and compared to the actual ATLAS pixel sensor design.

  6. A back-illuminated megapixel CMOS image sensor

    Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

    2005-01-01

    In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

  7. Nanocantilever based mass sensor integrated with cmos circuitry

    Davis, Zachary James; Abadal, G.; Campabadal, F.

    2003-01-01

    We have demonstrated the successful integration of a cantilever based mass detector with standard CMOS circuitry. The purpose of the circuitry is to facilitate the readout of the cantilever's deflection in order to measure resonant frequency shifts of the cantilever. The principle and design...... of the mass detector are presented showing that miniaturization of such cantilever based resonant devices leads to highly sensitive mass sensors, which have the potential to detect single molecules. The design of the readout circuitry used for the first electrical characterization of an integrated cantilever...... with CMOS circuitry is demonstrated. The electrical characterization of the device shows that the resonant behavior of the cantilever depends on the applied voltages, which corresponds to theory....

  8. Experimental research on transient ionizing radiation effects of CMOS microcontroller

    Jin Xiaoming; Fan Ruyu; Chen Wei; Wang Guizhen; Lin Dongsheng; Yang Shanchao; Bai Xiaoyan

    2010-01-01

    This paper presents an experimental test system of CMOS microcontroller EE80C196KC20. Based on this system, the transient ionizing radiation effects on microcontroller were investigated using 'Qiangguang-I' accelerator. The gamma pulse width was 20 ns and the dose rate (for the Si atom) was in the range of 6.7 x 10 6 to 2.0 x 10 8 Gy/s in the experimental study. The disturbance and latchup effects were observed at different dose rate levels. Latchup threshold of the microcontroller was obtained. Disturbance interval and the system power supply current have a relationship with the dose rate level. The transient ionizing radiation induces photocurrent in the PN junctions that are inherent in CMOS circuits. The photocurrent is responsible for the electrical and functional degradation. (authors)

  9. A BiCMOS Binary Hysteresis Chaos Generator

    Ahmadi, S.; Newcomb, R. W.

    A previous op-amp RC circuit which was proven to give chaotic signals is converted to a BiCMOS design more suitable to integrated circuit realization. The structure results from a degree two differential equation which includes binary hysteresis as its nonlinearity. The circuit is realized by differential (voltage to current) pairs feeding two capacitors, which carry the dynamics, with the key component being a (voltage to current) binary hysteresis circuit due to Linares.

  10. Tin (Sn) for enhancing performance in silicon CMOS

    Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

    2013-01-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  11. Simulation of design dependent failure exposure levels for CMOS ICs

    Kaul, N.; Bhuva, B.L.; Rangavajjhala, V.; van der Molen, H.; Kerns, S.E.

    1990-01-01

    The total dose exposure of CMOS ICs introduces bias-dependent parameter shifts in individual devices. The bias dependency of individual parameter shifts of devices cause different designs to behave differently under identical testing conditions. This paper studies the effect of design and bias on the radiation tolerance of ICs and presents an automated design tool that produces different designs for a logic function, and presents important parameters of each design to circuit designer for trade off analysis

  12. Integrated CMOS sensor technologies for the CLIC tracker

    AUTHOR|(SzGeCERN)754303

    2017-01-01

    Integrated technologies are attractive candidates for an all silicon tracker at the proposed future multi-TeV linear e+e- collider CLIC. In this context CMOS circuitry on a high resistivity epitaxial layer has been studied using the ALICE Investigator test-chip. Test-beam campaigns have been performed to study the Investigator performance and a Technology Computer Aided Design based simulation chain has been developed to further explore the sensor technology.

  13. Accelerated life testing effects on CMOS microcircuit characteristics, phase 1

    Maximow, B.

    1976-01-01

    An accelerated life test of sufficient duration to generate a minimum of 50% cumulative failures in lots of CMOS devices was conducted to provide a basis for determining the consistency of activation energy at 250 C. An investigation was made to determine whether any thresholds were exceeded during the high temperature testing, which could trigger failure mechanisms unique to that temperature. The usefulness of the 250 C temperature test as a predictor of long term reliability was evaluated.

  14. Tin (Sn) for enhancing performance in silicon CMOS

    Hussain, Aftab M.

    2013-10-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  15. Design and Characterization of Vertical Mesh Capacitors in Standard CMOS

    Christensen, Kåre Tais

    2001-01-01

    This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF/μ2, 2.2 μm wide shielded unit capacitors, 6...

  16. Scaling limits and reliability of SOI CMOS technology

    Ioannou, D E

    2005-01-01

    As bulk and PD-SOI CMOS approach their scaling limit (at gate length of around 50 nm), there is a renewed interest on FD-SOI because of its potential for continued scalability beyond this limit. In this review the performance and reliability of extremely scaled FD transistors are discussed and an attempt is made to identify critical areas for further research. (invited paper)

  17. Opinion rating of comparison photographs of television pictures from CCD cameras under irradiation

    Reading, V.M.; Dumbreck, A.A.

    1991-01-01

    As part of the development of a general method of testing the effects of gamma radiation on CCD television cameras, this is a report of an experimental study on the optimisation of still photographic representation of video pictures recorded before and during camera irradiation. (author)

  18. The study of interferometer spectrometer based on DSP and linear CCD

    Kang, Hua; Peng, Yuexiang; Xu, Xinchen; Xing, Xiaoqiao

    2010-11-01

    In this paper, general theory of Fourier-transform spectrometer and polarization interferometer is presented. A new design is proposed for Fourier-transform spectrometer based on polarization interferometer with Wollaston prisms and linear CCD. Firstly, measured light is changed into linear polarization light by polarization plate. And then the light can be split into ordinary and extraordinary lights by going through one Wollaston prism. At last, after going through another Wollaston prism and analyzer, interfering fringes can be formed on linear CCD behind the analyzer. The linear CCD is driven by CPLD to output amplitude of interfering fringes and synchronous signals of frames and pixels respectively. DSP is used to collect interference pattern signals from CCD and the digital data of interfering fringes are processed by using 2048-point-FFT. Finally, optical spectrum of measured light can be display on LCD connected to DSP with RS232. The spectrometer will possess the features of firmness, portability and the ability of real-time analyzing. The work will provide a convenient and significant foundation for application of more high accuracy of Fourier-transform spectrometer.

  19. Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model

    Penning De Vries, R.G.M.; Wallinga, Hans

    1985-01-01

    On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels.

  20. High-performance visible/UV CCD focal plane technology for spacebased applications

    Burke, B. E.; Mountain, R. W.; Gregory, J. A.; Huang, J. C. M.; Cooper, M. J.; Savoye, E. D.; Kosicki, B. B.

    1993-01-01

    We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.

  1. Numerical simulations and analyses of temperature control loop heat pipe for space CCD camera

    Meng, Qingliang; Yang, Tao; Li, Chunlin

    2016-10-01

    As one of the key units of space CCD camera, the temperature range and stability of CCD components affect the image's indexes. Reasonable thermal design and robust thermal control devices are needed. One kind of temperature control loop heat pipe (TCLHP) is designed, which highly meets the thermal control requirements of CCD components. In order to study the dynamic behaviors of heat and mass transfer of TCLHP, particularly in the orbital flight case, a transient numerical model is developed by using the well-established empirical correlations for flow models within three dimensional thermal modeling. The temperature control principle and details of mathematical model are presented. The model is used to study operating state, flow and heat characteristics based upon the analyses of variations of temperature, pressure and quality under different operating modes and external heat flux variations. The results indicate that TCLHP can satisfy the thermal control requirements of CCD components well, and always ensure good temperature stability and uniformity. By comparison between flight data and simulated results, it is found that the model is to be accurate to within 1°C. The model can be better used for predicting and understanding the transient performance of TCLHP.

  2. Development of Multiple-Element Flame Emission Spectrometer Using CCD Detection

    Seney, Caryn S.; Sinclair, Karen V.; Bright, Robin M.; Momoh, Paul O.; Bozeman, Amelia D.

    2005-01-01

    The full wavelength coverage of charge coupled device (CCD) detector when coupled with an echelle spectrography, the system allows for simultaneously multiple element spectroscopy to be performed. The multiple-element flame spectrometer was built and characterized through the analysis of environmentally significant elements such as Ca, K, Na, Cu,…

  3. Single-Pulse Dual-Energy Mammography Using a Binary Screen Coupled to Dual CCD Cameras

    1999-08-01

    Fossum, "Active pixel sensors—Are CCD’s Dinosaurs ?," Proc. SPIE 1900, 2-14 (1993). "S. Mendis, S. E. Kemeny, R. Gee, B. Pain, and E. R. Fossum, "Progress...Clin Oncol 13:1470-1477, 1995 12. Wahl RL, Zasadny K, Helvie M, et al: Metabolic monitoring of breast cancer chemohormonotherapy using posi- tron

  4. Development of a Portable 3CCD Camera System for Multispectral Imaging of Biological Samples

    Lee, Hoyoung; Park, Soo Hyun; Noh, Sang Ha; Lim, Jongguk; Kim, Moon S.

    2014-01-01

    Recent studies have suggested the need for imaging devices capable of multispectral imaging beyond the visible region, to allow for quality and safety evaluations of agricultural commodities. Conventional multispectral imaging devices lack flexibility in spectral waveband selectivity for such applications. In this paper, a recently developed portable 3CCD camera with significant improvements over existing imaging devices is presented. A beam-splitter prism assembly for 3CCD was designed to accommodate three interference filters that can be easily changed for application-specific multispectral waveband selection in the 400 to 1000 nm region. We also designed and integrated electronic components on printed circuit boards with firmware programming, enabling parallel processing, synchronization, and independent control of the three CCD sensors, to ensure the transfer of data without significant delay or data loss due to buffering. The system can stream 30 frames (3-waveband images in each frame) per second. The potential utility of the 3CCD camera system was demonstrated in the laboratory for detecting defect spots on apples. PMID:25350510

  5. MiCPhot: A prime-focus multicolor CCD photometer on the 85-cm Telescope

    Zhou Aiying; Jiang Xiaojun; Wei Jianyan; Zhang Yanping

    2009-01-01

    We describe a new BV RI multicolor CCD photometric system situated at the prime focus of the 85-cm telescope at the Xinglong Station of NAOC. Atmospheric extinction effects, photometric accuracy and color calibration dependence of the system are investigated. Additional attention was paid to giving observers guidance in estimating throughput, detection limit, signal-to-noise ratio and exposure time. (invited reviews)

  6. CCD linear image sensor ILX511 arrangment for a technical spectrometer

    Bartoněk, L.; Keprt, Jiří; Vlček, Martin

    2003-01-01

    Roč. 33, 2-3 (2003), s. 548-553 ISSN 0078-5466 Institutional research plan: CEZ:AV0Z1010921 Keywords : CCD linear sensor ILX511 * enhanced parallel port (EPP able IEEE1284) * A/D converter AD9280 Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.221, year: 2003

  7. A New CCD Camera at the Molėtai Observatory

    Zdanavičius J.

    2003-12-01

    Full Text Available The results of the first testing of a new CCD camera of the Molėtai Observatory are given. The linearity and the flat field corrections of good accuracy are determined by using shifted star field exposures.

  8. Ultrahigh-speed, high-sensitivity color camera with 300,000-pixel single CCD

    Kitamura, K.; Arai, T.; Yonai, J.; Hayashida, T.; Ohtake, H.; Kurita, T.; Tanioka, K.; Maruyama, H.; Namiki, J.; Yanagi, T.; Yoshida, T.; van Kuijk, H.; Bosiers, Jan T.; Etoh, T. G.

    2007-01-01

    We have developed an ultrahigh-speed, high-sensitivity portable color camera with a new 300,000-pixel single CCD. The 300,000-pixel CCD, which has four times the number of pixels of our initial model, was developed by seamlessly joining two 150,000-pixel CCDs. A green-red-green-blue (GRGB) Bayer filter is used to realize a color camera with the single-chip CCD. The camera is capable of ultrahigh-speed video recording at up to 1,000,000 frames/sec, and small enough to be handheld. We also developed a technology for dividing the CCD output signal to enable parallel, highspeed readout and recording in external memory; this makes possible long, continuous shots up to 1,000 frames/second. As a result of an experiment, video footage was imaged at an athletics meet. Because of high-speed shooting, even detailed movements of athletes' muscles were captured. This camera can capture clear slow-motion videos, so it enables previously impossible live footage to be imaged for various TV broadcasting programs.

  9. Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

    Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

    2017-09-01

    We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e- rms /pixel . This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

  10. Two Herbig-Haro objects discovered by narrow-band CCD imagery

    Ogura, Katsuo

    1990-01-01

    Two new Herbig-Haro objects, HH 132 and HH 133, have been discovered by CCD imagery behind interference filters on and just off the forbidden S II lines in the red. They are located in Puppis R2 and in Vela R2. Possible locations of their exciting sources are discussed. 12 refs

  11. PERFORMANCE OF DIFFERENT CMOS LOGIC STYLES FOR LOW POWER AND HIGH SPEED

    Sreenivasa Rao.Ijjada; Ayyanna.G; G.Sekhar Reddy; Dr.V.Malleswara Rao

    2011-01-01

    Designing high-speed low-power circuits with CMOS technology has been a major research problem for many years. Several logic families have been proposed and used to improve circuit performance beyond that of conventional static CMOS family. Fast circuit families are becoming attractive in deep sub micron technologies since the performance benefits obtained from process scaling are decreasing as feature size decreases. This paper presents CMOS differential circuit families such as Dual rail do...

  12. Self-calibrated humidity sensor in CMOS without post-processing.

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2012-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  13. Self-Calibrated Humidity Sensor in CMOS without Post-Processing

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  14. SlCCD7 controls strigolactone biosynthesis, shoot branching and mycorrhiza-induced apocarotenoid formation in tomato.

    Vogel, J.T.; Walter, M.H.; Giavalisco, P.; Lytovchenko, A.; Kohlen, W.; Charnikhova, T.; Simkin, A.J.; Goulet, C.; Strack, D.; Bouwmeester, H.J.; Fernie, A.R.; Klee, H.J.

    2010-01-01

    The regulation of shoot branching is an essential determinant of plant architecture, integrating multiple external and internal signals. One of the signaling pathways regulating branching involves the MAX (more axillary branches) genes. Two of the genes within this pathway, MAX3/CCD7 and MAX4/CCD8,

  15. 77 FR 42713 - Notice of Proposed Information Collection RequestsNPEFS 2011-2014: Common Core of Data (CCD...

    2012-07-20

    ... Core of Data (CCD) National Public Education Financial Survey AGENCY: Institute of Education Sciences, Department of Education. SUMMARY: The National Public Education Financial Survey (NPEFS) is an annual... of Data (CCD) National Public Education Financial Survey. OMB Control Number: 1850-0067. [[Page 42714...

  16. Recording of radiation-induced optical density changes in doped agarose gels with a CCD camera

    Tarte, B.J.; Jardine, P.A.; Van Doorn, T.

    1996-01-01

    Full text: Spatially resolved dose measurement with iron-doped agarose gels is continuing to be investigated for applications in radiotherapy dosimetry. It has previously been proposed to use optical methods, rather than MRI, for dose measurement with such gels and this has been investigated using a spectrophotometer (Appleby A and Leghrouz A, Med Phys, 18:309-312, 1991). We have previously studied the use of a pencil beam laser for such optical density measurement of gels and are currently investigating charge-coupled devices (CCD) camera imaging for the same purpose but with the advantages of higher data acquisition rates and potentially greater spatial resolution. The gels used in these studies were poured, irradiated and optically analysed in Perspex casts providing gel sections 1 cm thick and up to 20 cm x 30 cm in dimension. The gels were also infused with a metal indicator dye (xylenol orange) to render the radiation induced oxidation of the iron in the gel sensitive to optical radiation, specifically in the green spectral region. Data acquisition with the CCD camera involved illumination of the irradiated gel section with a diffuse white light source, with the light from the plane of the gel section focussed to the CCD array with a manual zoom lens. The light was also filtered with a green colour glass filter to maximise the contrast between unirradiated and irradiated gels. The CCD camera (EG and G Reticon MC4013) featured a 1024 x 1024 pixel array and was interfaced to a PC via a frame grabber acquisition board with 8 bit resolution. The performance of the gel dosimeter was appraised in mapping of physical and dynamic wedged 6 MV X-ray fields. The results from the CCD camera detection system were compared with both ionisation chamber data and laser based optical density measurements of the gels. Cross beam profiles were extracted from each measurement system at a particular depth (eg. 2.3 cm for the physical wedge field) for direct comparison. A

  17. A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

    Wallace, Robert M.

    2001-03-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  18. Robust Dehaze Algorithm for Degraded Image of CMOS Image Sensors

    Chen Qu

    2017-09-01

    Full Text Available The CMOS (Complementary Metal-Oxide-Semiconductor is a new type of solid image sensor device widely used in object tracking, object recognition, intelligent navigation fields, and so on. However, images captured by outdoor CMOS sensor devices are usually affected by suspended atmospheric particles (such as haze, causing a reduction in image contrast, color distortion problems, and so on. In view of this, we propose a novel dehazing approach based on a local consistent Markov random field (MRF framework. The neighboring clique in traditional MRF is extended to the non-neighboring clique, which is defined on local consistent blocks based on two clues, where both the atmospheric light and transmission map satisfy the character of local consistency. In this framework, our model can strengthen the restriction of the whole image while incorporating more sophisticated statistical priors, resulting in more expressive power of modeling, thus, solving inadequate detail recovery effectively and alleviating color distortion. Moreover, the local consistent MRF framework can obtain details while maintaining better results for dehazing, which effectively improves the image quality captured by the CMOS image sensor. Experimental results verified that the method proposed has the combined advantages of detail recovery and color preservation.

  19. Advanced CMOS device technologies for 45 nm node and below

    A. Veloso, T. Hoffmann, A. Lauwers, H. Yu, S. Severi, E. Augendre, S. Kubicek, P. Verheyen, N. Collaert, P. Absil, M. Jurczak and S. Biesemans

    2007-01-01

    Full Text Available We review and discuss the latest developments and technology options for 45 nm node and below, with scaled planar bulk MOSFETs and MuGFETs as emerging devices. One of the main metal gate (MG candidates for scaled CMOS technologies are fully silicided (FUSI gates. In this work, by means of a selective and controlled poly etch-back integration process, dual work-function Ni-based FUSI/HfSiON CMOS circuits with record ring oscillator performance (high-VT are reported (17 ps at VDD=1.1 V and 20 pA/μm Ioff, meeting the ITRS 45 nm node requirement for low-power (LP CMOS. Compatibility of FUSI and other MG with known stress boosters like stressed CESL (contact-etch-stop-layer with high intrinsic stress or embedded SiGe in the pMOS S/D regions is validated. To obtain MuGFET devices that are competitive, as compared to conventional planar bulk devices, and that meet the stringent drive and leakage current requirements for the 32 nm node and beyond, higher channel mobilities are required. Results obtained by several strain engineering methods are presented here.

  20. CMOS-compatible high-voltage integrated circuits

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  1. 32 x 16 CMOS smart pixel array for optical interconnects

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  2. From vertex detectors to inner trackers with CMOS pixel sensors

    Besson, A.

    2017-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

  3. Transient-induced latchup in CMOS integrated circuits

    Ker, Ming-Dou

    2009-01-01

    "Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description.

  4. Multi-target electrochemical biosensing enabled by integrated CMOS electronics

    Rothe, J; Lewandowska, M K; Heer, F; Frey, O; Hierlemann, A

    2011-01-01

    An integrated electrochemical measurement system, based on CMOS technology, is presented, which allows the detection of several analytes in parallel (multi-analyte) and enables simultaneous monitoring at different locations (multi-site). The system comprises a 576-electrode CMOS sensor chip, an FPGA module for chip control and data processing, and the measurement laptop. The advantages of the highly versatile system are demonstrated by two applications. First, a label-free, hybridization-based DNA sensor is enabled by the possibility of large-scale integration in CMOS technology. Second, the detection of the neurotransmitter choline is presented by assembling the chip with biosensor microprobe arrays. The low noise level enables a limit of detection of, e.g., 0.3 µM choline. The fully integrated system is self-contained: it features cleaning, functionalization and measurement functions without the need for additional electrical equipment. With the power supplied by the laptop, the system is very suitable for on-site measurements

  5. Nanosecond-laser induced crosstalk of CMOS image sensor

    Zhu, Rongzhen; Wang, Yanbin; Chen, Qianrong; Zhou, Xuanfeng; Ren, Guangsen; Cui, Longfei; Li, Hua; Hao, Daoliang

    2018-02-01

    The CMOS Image Sensor (CIS) is photoelectricity image device which focused the photosensitive array, amplifier, A/D transfer, storage, DSP, computer interface circuit on the same silicon substrate[1]. It has low power consumption, high integration,low cost etc. With large scale integrated circuit technology progress, the noise suppression level of CIS is enhanced unceasingly, and its image quality is getting better and better. It has been in the security monitoring, biometrice, detection and imaging and even military reconnaissance and other field is widely used. CIS is easily disturbed and damaged while it is irradiated by laser. It is of great significance to study the effect of laser irradiation on optoelectronic countermeasure and device for the laser strengthening resistance is of great significance. There are some researchers have studied the laser induced disturbed and damaged of CIS. They focused on the saturation, supersaturated effects, and they observed different effects as for unsaturation, saturation, supersaturated, allsaturated and pixel flip etc. This paper research 1064nm laser interference effect in a typical before type CMOS, and observring the saturated crosstalk and half the crosstalk line. This paper extracted from cmos devices working principle and signal detection methods such as the Angle of the formation mechanism of the crosstalk line phenomenon are analyzed.

  6. First result on biased CMOS MAPs-on-diamond devices

    Kanxheri, K., E-mail: keida.kanxheri@pg.infn.it [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Citroni, M.; Fanetti, S. [LENS Firenze, Florence (Italy); Lagomarsino, S. [Università degli Studi di Firenze, Florence (Italy); INFN Firenze, Pisa (Italy); Morozzi, A. [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Parrini, G. [Università degli Studi di Firenze, Florence (Italy); Passeri, D. [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Sciortino, S. [Università degli Studi di Firenze, Florence (Italy); INFN Firenze, Pisa (Italy); Servoli, L. [INFN Perugia, Perugia (Italy)

    2015-10-01

    Recently a new type of device, the MAPS-on-diamond, obtained bonding a thinned to 25 μm CMOS Monolithic Active Pixel Sensor to a standard 500 μm pCVD diamond substrate, has been proposed and fabricated, allowing a highly segmented readout (10×10 μm pixel size) of the signal produced in the diamond substrate. The bonding between the two materials has been obtained using a new laser technique to deliver the needed energy at the interface. A biasing scheme has been adopted to polarize the diamond substrate to allow the charge transport inside the diamond without disrupting the functionalities of the CMOS Monolithic Active Pixel Sensor. The main concept of this class of devices is the capability of the charges generated in the diamond by ionizing radiation to cross the silicon–diamond interface and to be collected by the MAPS photodiodes. In this work we demonstrate that such passage occurs and measure its overall efficiency. This study has been carried out first calibrating the CMOS MAPS with monochromatic X-rays, and then testing the device with charged particles (electrons) either with and without biasing the diamond substrate, to compare the amount of signal collected.

  7. Development of CMOS Imager Block for Capsule Endoscope

    Shafie, S; Fodzi, F A M; Tung, L Q; Lioe, D X; Halin, I A; Hasan, W Z W; Jaafar, H

    2014-01-01

    This paper presents the development of imager block to be associated in a capsule endoscopy system. Since the capsule endoscope is used to diagnose gastrointestinal diseases, the imager block must be in small size which is comfortable for the patients to swallow. In this project, a small size 1.5 V button battery is used as the power supply while the voltage supply requirements for other components such as microcontroller and CMOS image sensor are higher. Therefore, a voltage booster circuit is proposed to boost up the voltage supply from 1.5 V to 3.3 V. A low power microcontroller is used to generate control pulses for the CMOS image sensor and to convert the 8-bits parallel data output to serial data to be transmitted to the display panel. The results show that the voltage booster circuit was able to boost the voltage supply from 1.5 V to 3.3 V. The microcontroller precisely controls the CMOS image sensor to produce parallel data which is then serialized again by the microcontroller. The serial data is then successfully translated to 2fps image and displayed on computer.

  8. Design principles and applications of a cooled CCD camera for electron microscopy.

    Faruqi, A R

    1998-01-01

    Cooled CCD cameras offer a number of advantages in recording electron microscope images with CCDs rather than film which include: immediate availability of the image in a digital format suitable for further computer processing, high dynamic range, excellent linearity and a high detective quantum efficiency for recording electrons. In one important respect however, film has superior properties: the spatial resolution of CCD detectors tested so far (in terms of point spread function or modulation transfer function) are inferior to film and a great deal of our effort has been spent in designing detectors with improved spatial resolution. Various instrumental contributions to spatial resolution have been analysed and in this paper we discuss the contribution of the phosphor-fibre optics system in this measurement. We have evaluated the performance of a number of detector components and parameters, e.g. different phosphors (and a scintillator), optical coupling with lens or fibre optics with various demagnification factors, to improve the detector performance. The camera described in this paper, which is based on this analysis, uses a tapered fibre optics coupling between the phosphor and the CCD and is installed on a Philips CM12 electron microscope equipped to perform cryo-microscopy. The main use of the camera so far has been in recording electron diffraction patterns from two dimensional crystals of bacteriorhodopsin--from wild type and from different trapped states during the photocycle. As one example of the type of data obtained with the CCD camera a two dimensional Fourier projection map from the trapped O-state is also included. With faster computers, it will soon be possible to undertake this type of work on an on-line basis. Also, with improvements in detector size and resolution, CCD detectors, already ideal for diffraction, will be able to compete with film in the recording of high resolution images.

  9. Important considerations for radiochromic film dosimetry with flatbed CCD scanners and EBT GAFCHROMIC[reg] film

    Lynch, Bart D.; Kozelka, Jakub; Ranade, Manisha K.; Li, Jonathan G.; Simon, William E.; Dempsey, James F.

    2006-01-01

    In this study, we present three significant artifacts that have the potential to negatively impact the accuracy and precision of film dosimetry measurements made using GAFCHROMIC[reg] EBT radiochromic film when read out with CCD flatbed scanners. Films were scanned using three commonly employed instruments: a Macbeth TD932 spot densitometer, an Epson Expression 1680 CCD array scanner, and a Microtek ScanMaker i900 CCD array scanner. For the two scanners we assessed the variation in optical density (OD) of GAFCHROMIC EBT film with scanning bed position, angular rotation of the film with respect to the scan line direction, and temperature inside the scanner due to repeated scanning. Scanning uniform radiochromic films demonstrated a distinct bowing effect in profiles in the direction of the CCD array with a nonuniformity of up to 17%. Profiles along a direction orthogonal to the CCD array demonstrated a 7% variation. A strong angular dependence was found in measurements made with the flatbed scanners; the effect could not be reproduced with the spot densitometer. An IMRT quality assurance film was scanned twice rotating the film 90 deg. between the scans. For films scanned on the Epson scanner, up to 12% variation was observed in unirradiated EBT films rotated between 0 deg. and 90 deg. , which decreased to approximately 8% for EBT films irradiated to 300 cGy. Variations of up to 80% were observed for films scanned with the Microtek scanner. The scanners were found to significantly increase the film temperature with repeated scanning. Film temperature between 18 and 33 deg. C caused OD changes of approximately 7%. Considering these effects, we recommend adherence to a strict scanning protocol that includes: maintaining the orientation of films scanned on flatbed scanners, limiting scanning to the central portion of the scanner bed, and limiting the number of consecutive scans to minimize changes in OD caused by film heating

  10. Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

    Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2015-07-01

    CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

  11. Optimization of CMOS active pixels for high resolution digital radiography

    Kim, Young Soo

    2007-02-01

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal-to-noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs. We developed our theoretical noise model to account for the temporal noise in active pixels, and then found out the optimum design parameters such as fill actor, each size of the three transistors (source follower, row selection transistor, bias transistor) comprising active pixels, bias current, and load capacitance that can have the maximum signal-to-noise ratio. To develop the theoretical noise model in active pixels, we considered the integration noise of the photodiode and the readout noise of the transistors related to readout. During integration, the shot noise due to the dark current and photocurrent, during readout, the thermal and flicker noise were considered. The developed model can take the input variables such as photocurrent, capacitance of the photodiode, integration time, transconductance of the transistors, channel resistance of the transistors, gate-to-source capacitance of the follower, and load capacitance etc. To validate our noise model, two types of test structures have been realized. Firstly, four types of photodiodes (n_d_i_f_f_u_s_i_o_n/p_s_u_b_s_t_r_a_t_e, n_w_e_l_l/p_s_u_b_s_t_r_a_t_e, n_d_i_f_f_u_s_i_o_n/p_e_p_i_t_a_x_i_a_l/p_s_u_b_s_t_r_a_t_e, n_w_e_l_l/p_e_p_i_t_a_x_i_a_l/p_s_u_b_s_t_r_a_t_e) used in CMOS active pixels were fabricated

  12. CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

    Davidson, Bradley Darren

    This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different

  13. CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

    Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

    1996-01-01

    The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

  14. Radiation imaging detectors made by wafer post-processing of CMOS chips

    Blanco Carballo, V.M.

    2009-01-01

    In this thesis several wafer post-processing steps have been applied to CMOS chips. Amplification gas strucutures are built on top of the microchips. A complete radiation imaging detector is obtained this way. Integrated Micromegas-like and GEM-like structures were fabricated on top of Timepix CMOS

  15. Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

    Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

    2010-01-01

    Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

  16. Materials Characterization of CIGS solar cells on Top of CMOS chips

    Lu, J.; Liu, W.; Kovalgin, A.Y.; Sun, Y.; Schmitz, J.; Venkatasubramanian, R.; Radousky, H.; Liang, H.

    2011-01-01

    In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement

  17. Design rules for RCA self-aligned silicon-gate CMOS/SOS process

    1977-01-01

    The CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules.

  18. Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

    Acar, M.

    2011-01-01

    In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

  19. An Analytical Model for Spectral Peak Frequency Prediction of Substrate Noise in CMOS Substrates

    Shen, Ming; Mikkelsen, Jan H.

    2013-01-01

    This paper proposes an analytical model describing the generation of switching current noise in CMOS substrates. The model eliminates the need for SPICE simulations in existing methods by conducting a transient analysis on a generic CMOS inverter and approximating the switching current waveform us...

  20. A CMOS transconductance-C filter technique for very high frequencies

    Nauta, Bram

    1992-01-01

    CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators, are presented. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters