Sample records for cavity semiconductor lasers

  1. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.


    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  2. Pulse properties of external cavity mode locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Kroh, Marcel; Mørk, Jesper


    The performance of an external-cavity mode-locked semiconductor laser is investigated both theoretically and experimentally. The optimization analysis focuses on the regimes of stable mode locking and the generation of sub-picosecond optical pulses. We demonstrate stable output pulses down to one...... picosecond duration with more than 30 dB trailing pulse suppression. The limiting factors to the device performance are investigated on the basis of a fully-distributed time-domain model.We find that ultrafast gain dynamics effectively reduce the pulse-shaping strength and inhibit the generation...

  3. Semiconductor laser with a birefringent external cavity for information systems with wavelength division multiplexing

    Energy Technology Data Exchange (ETDEWEB)

    Paranin, V D; Matyunin, S A; Tukmakov, K N [S.P. Korolev Samara State Aerospace University, Samara (Russian Federation)


    The spectrum of a semiconductor laser with a birefringent external Gires – Tournois cavity is studied. The generation of two main laser modes corresponding to the ordinary and extraordinary wave resonances is found. It is shown that the radiation spectrum is controlled with a high energy efficiency without losses for spectral filtration. The possibility of using two-mode lasing in optical communication systems with wavelength division multiplexing is shown. (control of laser radiation parameters)

  4. Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

    Energy Technology Data Exchange (ETDEWEB)

    Tronciu, V Z; Mirasso, Claudio R; Colet, Pere [Instituto de Fisica Interdisciplinar y Sistemas Complejos (IFISC) CSIC-UIB, Campus Universitat de les Illes Balears, E-07122 Palma de Mallorca (Spain)], E-mail:


    We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed.

  5. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)


    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  6. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL) (United States)

    McInerney, John G.


    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  7. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper


    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order...... to improve the mode-locking performance, such as reducing the pulsewidth and time-bandwidth product as much as possible. Timing jitter is determined by means of extensive numerical simulations of the model, demontrating that an external modulation is required in order to maintain moderate timing......-jitter and phase-noise levels at low frequencies. The effect of the driving conditions is investigated in order to achieve short pulses and low timing jitter. Our results are in qualitative agreement with reported experiments and predictions obtained from the master equation for mode-locking....

  8. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel


    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  9. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji


    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  10. Tunable mode-locked semiconductor laser with Bragg mirror external cavity

    DEFF Research Database (Denmark)

    Yvind, Kresten; Jørgensen, T.; Birkedal, Dan


    We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have...

  11. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui


    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  12. Semiconductor Laser Measurements Laboratory (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  13. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.


    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  14. Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities. (United States)

    Zhu, X; Cassidy, D T


    A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

  15. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)


    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  16. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.


    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  17. Semiconductor Laser with a Self-Pumped Phase Conjugate External Cavity (United States)


    virtually the case for the DPCM . It shows the greatest potential for laser phasing, of any geometry. In that device, two independent pump beams are... DPCM in that respect, except that only a single pump beam is used. Thus its study falls under the self-imposed guidelines of applicability for laser...PPCM, as in its cousin the DPCM , the beams are constrained so that only a single grating is written. Consequently, the reflection intensity is stable [61

  18. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji


    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  19. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W


    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  20. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove


    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  1. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper


    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  2. Optical cavity furnace for semiconductor wafer processing (United States)

    Sopori, Bhushan L.


    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  3. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro


    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  4. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej


    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  5. A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

    International Nuclear Information System (INIS)

    Pailharey, Eric


    The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

  6. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.


    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  7. A generic travelling wave solution in dissipative laser cavity

    Indian Academy of Sciences (India)


    Sep 9, 2016 ... Abstract. A large family of cosh-Gaussian travelling wave solution of a complex Ginzburg–Landau equation. (CGLE), that describes dissipative semiconductor laser cavity is derived. Using perturbation method, the stabil- ity region is identified. Bifurcation analysis is done by smoothly varying the cavity loss ...

  8. Semiconductor film Cherenkov lasers (United States)

    Walsh, John E.


    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  9. Modeling of Coupled Nano-Cavity Lasers

    DEFF Research Database (Denmark)

    Skovgård, Troels Suhr

    Modeling of nanocavity light emitting semiconductor devices is done using the semiconductor laser rate equations with spontaneous and stimulated emission terms modified for Purcell enhanced recombination. The modified terms include details about the optical and electronic density-of-states and it......Modeling of nanocavity light emitting semiconductor devices is done using the semiconductor laser rate equations with spontaneous and stimulated emission terms modified for Purcell enhanced recombination. The modified terms include details about the optical and electronic density......-of-states relative to the optical density-of-states. The low effective Purcell eect for quantum well devices limits the highest possible modulation bandwidth to a few tens of gigahertz, which is comparable to the performance of conventional diode lasers. Compared to quantum well devices, quantum dot devices have...... is useful for design of coupled systems. A tight-binding description for coupled nanocavity lasers is developed and employed to investigate the phase-locking behavior for the system of two coupled cavities. Phase-locking is found to be critically dependent on exact parameter values and to be dicult...

  10. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry


    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  11. Optical cavity cooling of mechanical modes of a semiconductor nanomembrane

    DEFF Research Database (Denmark)

    Usami, Koji; Naesby, A.; Bagci, Tolga


    Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high-quality-factor and......Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high......-quality-factor and optically active semiconductor nanomembrane. The cooling is a result of electron–hole generation by cavity photons. Consequently, the cooling factor depends on the optical wavelength, varies drastically in the vicinity of the semiconductor bandgap, and follows the excitonic absorption behaviour...... an alternative cooling mechanism that is a result of electronic stress via the deformation potential, and outline future directions for cavity optomechanics with optically active semiconductors....

  12. Resonant activation in bistable semiconductor lasers

    International Nuclear Information System (INIS)

    Lepri, Stefano; Giacomelli, Giovanni


    We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in such optical systems

  13. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.


    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  14. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.


    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  15. Decoherence in semiconductor cavity QED systems due to phonon couplings

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Mørk, Jesper


    We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...... diagonalization approach. We find that for large cavity decay rates the perturbation theory may break down....

  16. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati


    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  17. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.


    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  18. Hybrid Vertical-Cavity Laser

    DEFF Research Database (Denmark)


    The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide ...

  19. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.


    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  20. A generic travelling wave solution in dissipative laser cavity

    Indian Academy of Sciences (India)


    Sep 9, 2016 ... (CGLE), that describes dissipative semiconductor laser cavity is derived. Using perturbation method, the ... insight of the system dynamics. He's variational method is adopted to obtain the standard sech-type and the not- ... larger variety of systems such as physical [2–4], chem- ical [5], mathematical [6], and ...

  1. Dispersion-managed semiconductor mode-locked ring laser. (United States)

    Resan, Bojan; Archundia, Luis; Delfyett, Peter J; Alphonse, Gerard


    A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

  2. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project (United States)

    National Aeronautics and Space Administration — In this Phase II proposal we plan to design and develop a semiconductor, low phase/frequency noise, single-frequency, external cavity semiconductor laser (ECL)...

  3. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    International Nuclear Information System (INIS)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.


    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  4. Controlling spontaneous emission dynamics in semiconductor micro cavities (United States)

    Gayral, B.

    Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality in other words a long photon storage time are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed. L'émission spontanée de lumière peut être contrôlée, ainsi que nous l'enseigne l'électrodynamique quantique en cavité, ce fait a été démontré expérimentalement en physique atomique. En particulier, coupler un émetteur à un mode photonique résonnant d'une cavité peut exalter son taux d'émission spontanée : c'est l'effet Purcell. Bien qu'il semble très prometteur de mettre en pratique ces concepts pour améliorer les dispositifs semi-conducteurs émetteurs de lumière, le choix du système émetteur/cavité est crucial. Nous montrons que les boîtes quantiques semi-conductrices sont des bons candidats pour observer l'effet Purcell. Il faut par ailleurs des cavités de faible volume ayant une grande qualité optique en d'autres mots un long temps de

  5. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji


    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  6. Chaotic bursting in semiconductor lasers (United States)

    Ruschel, Stefan; Yanchuk, Serhiy


    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  7. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.


    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  8. Ultrafast dynamics and laser action of organic semiconductors

    CERN Document Server

    Vardeny, Zeev Valy


    Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

  9. Packaging of high power semiconductor lasers

    CERN Document Server

    Liu, Xingsheng; Xiong, Lingling; Liu, Hui


    This book introduces high power semiconductor laser packaging design. The characteristics and challenges of the design and various packaging, processing, and testing techniques are detailed by the authors. New technologies, in particular thermal technologies, current applications, and trends in high power semiconductor laser packaging are described at length and assessed.

  10. Measurement of spectral linewidths of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Du Xiaocheng; He Zhengchuan; Tang Sulan


    Based on the van der Pol equation, formulas describing the measurement of spectral linewidths of semiconductor lasers with the delayed self-heterodyne method were deduced and the influence of the spectral parameters on the measurement are given. Experimental results of single frequency semiconductor lasers are reported.

  11. Crystallization of Organic Semiconductor Molecules in Nanosized Cavities

    DEFF Research Database (Denmark)

    Milita, Silvia; Dionigi, Chiara; Borgatti, Francesco


    The crystallization of an organic semiconductor, viz., tetrahexil-sexithiophene (H4T6) molecules, confined into nanosized cavities of a self-organized polystyrene beads template, has been investigated by means of in situ grazing incidence X-ray diffraction measurements, during the solvent...

  12. Micro-Cavity Fluidic Dye Laser

    DEFF Research Database (Denmark)

    Helbo, Bjarne; Kristensen, Anders; Menon, Aric Kumaran


    We have successfully designed, fabricated and characterized a micro-cavity fluidic dye laser with metallic mirrors, which can be integrated with polymer based lab-on-a-chip microsystems without further processing steps. A simple rate-equation model is used to predict the average pumping power...... threshold for lasing as function of cavity-mirror reflectance, laser dye concentration and cavity length. The laser device is characterized using the laser dye Rhodamine 6G dissolved in ethanol. Lasing is observed, and the influence of dye concentration is investigated....

  13. Synchronization properties of chaotic semiconductor lasers and applications to encryption (United States)

    Mirasso, Claudio R.; Vicente, Raúl; Colet, Pere; Mulet, Josep; Pérez, Toni


    We review the main properties of two unidirectionally coupled single-mode semiconductor lasers ( master-slave configuration). Our analysis is based on numerical simulations of a rate equations model. The emitter, or master laser, is assumed to be an external-cavity single-mode semiconductor laser subject to optical feedback that operates in a chaotic regime. The receiver, or slave laser, is similar to the emitter but can either operate in a chaotic regime, as the emitter (closed loop configuration), or without optical feedback and consequently under CW when it is uncoupled (open loop configuration). This configuration is one of the most simple and useful configuration for chaos based communication systems and data encryption. To cite this article: C.R. Mirasso et al., C. R. Physique 5 (2004).

  14. Delay induced high order locking effects in semiconductor lasers (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.


    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  15. Towards Laser Cooling of Semiconductors (United States)

    Hassani nia, Iman

    This dissertation reports on novel theoretical concepts as well as experimental efforts toward laser cooling of semiconductors. The use of quantum well system brings the opportunity to engineer bandstructure, effective masses and the spatial distribution of electrons and holes. This permits the incorporation of novel quantum mechanical phenomena to manipulate the temperature change of the material upon light-matter interaction. Inspired by the fact that Coulomb interaction can lead to blueshift of radiation after photo-absorption, the theory of Coulomb assisted laser cooling is proposed and investigated for the first time. In order to design suitable multiple quantum well (MQW) structures with Coulomb interaction a Poisson-Schrodinger solver was devised using MATLAB software. The software is capable of simulating all III-V material compositions and it results have been confirmed experimentally. In the next step, different MQW designs were proposed and optimized to exploit Coulomb interaction for assisting of optical refrigeration. One of the suitable designs with standard InGaAsP/InAlAs/InP layers was used to grow the MQW structures using metal organic vapor deposition (MOCVD). Novel techniques of fabrication were implemented to make suspended structures for detecting ultralow thermal powers. By fabricating accurate thermometers, the temperature changes of the device upon laser absorption were measured. The accurate measurement of the temperature encouraged us to characterize the electrical response of the device as another important tool to promote our understanding of the 4 underlying physical phenomena. This is in addition to the accurate spectral and time-resolved photoluminescence measurements that provided us with a wealth of information about the effects of stress, Auger recombination and excitonic radiance in such structures. As the future works, important measurements for finding the quantum efficiency of the devices via electrical characterization and

  16. Laser Cooling of 2-6 Semiconductors (United States)


    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  17. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li


    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  18. Study on guided waves in semiconductor lasers

    International Nuclear Information System (INIS)

    Pudensi, M.A.A.


    In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

  19. Operational characteristics of dual gain single cavity Nd:YVO 4 laser

    Indian Academy of Sciences (India)

    Operational characteristics of a dual gain single cavity Nd:YVO4 laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be ...

  20. A compact chaotic laser device with a two-dimensional external cavity structure

    Energy Technology Data Exchange (ETDEWEB)

    Sunada, Satoshi, E-mail:; Adachi, Masaaki [Faculty of Mechanical Engineering, Institute of Science and Engineering, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan); Fukushima, Takehiro [Department of Information and Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan); Shinohara, Susumu; Arai, Kenichi [NTT Communication Science Laboratories, NTT Corporation, 2-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan); Harayama, Takahisa [NTT Communication Science Laboratories, NTT Corporation, 2-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan); Department of Mechanical Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)


    We propose a compact chaotic laser device, which consists of a semiconductor laser and a two-dimensional (2D) external cavity for delayed optical feedback. The overall size of the device is within 230 μm × 1 mm. A long time delay sufficient for chaos generation can be achieved with the small area by the multiple reflections at the 2D cavity boundary, and the feedback strength is controlled by the injection current to the external cavity. We experimentally demonstrate that a variety of output properties, including chaotic output, can be selectively generated by controlling the injection current to the external cavity.

  1. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Y.; Oldenbeuving, R.M.; Klein, E.J.; Lee, C.J.; Song, H.; Khan, M.R.H.; Offerhaus, H.L.; Van der Slot, P.J.M.; Boller, K.J.


    We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 µm wavelength range. The Si3N4/SiO2 glass waveguide circuit comprises two

  2. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Youwen; Oldenbeuving, Ruud; Klein, E.J.; Lee, Christopher James; Song, H.; Khan, M.R.H.; Offerhaus, Herman L.; van der Slot, Petrus J.M.; Boller, Klaus J.; Mackenzie, J.I.; Jelinkova, H.; Taira, T.; Ahmed, M.A.


    abstract .We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 μm wavelength range. The Si3N4/SiO2 glass waveguide circuit

  3. Semiconductor laser using multimode interference principle (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao


    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  4. Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

    Directory of Open Access Journals (Sweden)

    Faten A. Chaqmaqchee


    Full Text Available III-V semiconductors components such as Gallium Arsenic (GaAs, Indium Antimony (InSb, Aluminum Arsenic (AlAs and Indium Arsenic (InAs have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 μm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs, where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs enclosed between top and bottom of Aluminum (Gallium Arsenic Al(GaAs distributed bragg mirrors (DBRs using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs structures are based on Fabry Perot (FP method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.

  5. Lasers with intra-cavity phase elements (United States)

    Gulses, A. Alkan; Kurtz, Russell; Islas, Gabriel; Anisimov, Igor


    Conventional laser resonators yield multimodal output, especially at high powers and short cavity lengths. Since highorder modes exhibit large divergence, it is desirable to suppress them to improve laser quality. Traditionally, such modal discriminations can be achieved by simple apertures that provide absorptive loss for large diameter modes, while allowing the lower orders, such as the fundamental Gaussian, to pass through. However, modal discrimination may not be sufficient for short-cavity lasers, resulting in multimodal operation as well as power loss and overheating in the absorptive part of the aperture. In research to improve laser mode control with minimal energy loss, systematic experiments have been executed using phase-only elements. These were composed of an intra-cavity step function and a diffractive out-coupler made of a computer-generated hologram. The platform was a 15-cm long solid-state laser that employs a neodymium-doped yttrium orthovanadate crystal rod, producing 1064 nm multimodal laser output. The intra-cavity phase elements (PEs) were shown to be highly effective in obtaining beams with reduced M-squared values and increased output powers, yielding improved values of radiance. The utilization of more sophisticated diffractive elements is promising for more difficult laser systems.

  6. Semiconductor Laser Tracking Frequency Distance Gauge (United States)

    Phillips, James D.; Reasenberg, Robert D.


    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  7. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)


    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  8. Teradiode's high brightness semiconductor lasers (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz


    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  9. Compact and highly efficient laser pump cavity (United States)

    Chang, Jim J.; Bass, Isaac L.; Zapata, Luis E.


    A new, compact, side-pumped laser pump cavity design which uses non-conventional optics for injection of laser-diode light into a laser pump chamber includes a plurality of elongated light concentration channels. In one embodiment, the light concentration channels are compound parabolic concentrators (CPC) which have very small exit apertures so that light will not escape from the pumping chamber and will be multiply reflected through the laser rod. This new design effectively traps the pump radiation inside the pump chamber that encloses the laser rod. It enables more uniform laser pumping and highly effective recycle of pump radiation, leading to significantly improved laser performance. This new design also effectively widens the acceptable radiation wavelength of the diodes, resulting in a more reliable laser performance with lower cost.

  10. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes (United States)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  11. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter


    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  12. Modeling and experimental verification of laser self-mixing interference phenomenon with the structure of two-external-cavity feedback (United States)

    Chen, Peng; Liu, Yuwei; Gao, Bingkun; Jiang, Chunlei


    A semiconductor laser employed with two-external-cavity feedback structure for laser self-mixing interference (SMI) phenomenon is investigated and analyzed. The SMI model with two directions based on F-P cavity is deduced, and numerical simulation and experimental verification were conducted. Experimental results show that the SMI with the structure of two-external-cavity feedback under weak light feedback is similar to the sum of two SMIs.

  13. Bistable laser device with multiple coupled active vertical-cavity resonators (United States)

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.


    A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

  14. Power-efficient III-V/silicon external cavity DBR lasers. (United States)

    Zilkie, A J; Seddighian, P; Bijlani, B J; Qian, W; Lee, D C; Fathololoumi, S; Fong, J; Shafiiha, R; Feng, D; Luff, B J; Zheng, X; Cunningham, J E; Krishnamoorthy, A V; Asghari, M


    We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

  15. Laser cooling in semiconductors (Conference Presentation) (United States)

    Zhang, Jun


    Laser cooling of semiconductor is very important topic in science researches and technological applications. Here we will report our progresses on laser cooling in semiconductors. By using of strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, we observe a net cooling by about 40 K starting from 290 kelvin with 514-nm pumping and about 15 K starting from100 K with 532-nm pumping in a semiconductor using group-II-VI cadmium sulphide nanobelts. We also discuss the thickness dependence of laser cooing in CdS nanobelts, a concept porotype of semiconductor cryocooler and possibility of laser cooling in II-VI semiconductor family including CdSSe、CdSe, CdSe/ZnTe QDs and bulk CdS et al., Beyond II-VI semiconductor, we will present our recent progress in laser cooling of organic-inorganic perovskite materials, which show a very big cooling power and external quantum efficiency in 3D and 2D case. Further more, we demonstrate a resolved sideband Raman cooling of a specific LO phonon in ZnTe, in which only one specific phonon resonant with exciton can be cooled or heated. In the end, we will discuss the nonlinear anti-Stokes Raman and anti-Stokes photoluminescence upcoversion in very low temperature as low as down to liquid 4.2 K. In this case, the anti-Stokes resonance induces a quadratic power denpendece of anti-Stokes Raman and anti-Stokes PL. We proposed a CARS-like process to explain it. This nonlinear process also provides a possible physics picture of ultra-low temperatures phonon assisted photoluminescence and anti-Stokes Raman process.

  16. Droplet based cavities and lasers

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Kristensen, Anders; Mortensen, Asger


    The self-organized and molecularly smooth surface on liquid microdroplets makes them attractive as optical cavities with very high quality factors. This chapter describes the basic theory of optical modes in spherical droplets. The mechanical properties including vibrational excitation are also...... described, and their implications for microdroplet resonator technology are discussed. Optofluidic implementations of microdroplet resonators are reviewed with emphasis on the basic optomechanical properties....

  17. Quantum dot SOA/silicon external cavity multi-wavelength laser. (United States)

    Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael


    We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

  18. Coupled Photonic Crystal Cavity Array Laser

    DEFF Research Database (Denmark)

    Schubert, Martin

    This thesis describes the design, fabrication and characterization of photonic crystal slab lasers. The main focus is on coupled photonic crystal cavity lasers which are examined in great detail. The cavity type which is mainly explored consists of a defect formed by a single missing hole...... in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality...... are identified such as the size and material for the carrier wafer in the III-V etch and the importance of removing all remains of the e-beam lithography mask after the etch of the hard mask. Detailed simulations are shown for a simple system with two coupled cavities in different coupling directions...

  19. Lambda shifted photonic crystal cavity laser

    DEFF Research Database (Denmark)

    Schubert, Martin; Skovgård, Troels Suhr; Ek, Sara


    We propose and demonstrate an alternative type of photonic crystal laser design that shifts all the holes in the lattice by a fixed fraction of the targeted emission wavelength. The structures are realized in InGaAsP =1.15 with InGaAsP quantum wells =1.52 as gain material. Cavities with shifts of...

  20. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke


    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  1. Soliton laser: A computational two-cavity model

    DEFF Research Database (Denmark)

    Berg, P.; If, F.; Christiansen, Peter Leth


    An improved computational two-cavity model of the soliton laser proposed and designed by Mollenauer and Stolen [Opt. Lett. 9, 13 (1984)] is obtained through refinements of (i) the laser cavity model, (ii) the pulse propagation in the fiber cavity, and (iii) the coupling between the two cavities...

  2. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.


    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  3. Method and system for powering and cooling semiconductor lasers (United States)

    Telford, Steven J; Ladran, Anthony S


    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  4. Ring-resonator-integrated tunable external cavity laser employing EAM and SOA. (United States)

    Yoon, Ki-Hong; Kwon, O-Kyun; Kim, Ki Soo; Choi, Byung-Seok; Oh, Su Hwan; Kim, Hyun Su; Sim, Jae-Sik; Kim, Chul Soo


    We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.

  5. Laser-based semiconductor fabrication

    International Nuclear Information System (INIS)

    Wachter, J.R.


    This paper discusses research that has concentrated on methods for direct processing of integrated circuits (IC's), such as defect reduction in epitaxial silicon, large grain polysilicon growth, laser-assisted etching and film deposition methods, and removal of dislocation networks

  6. Introduction to semiconductor lasers for optical communications an applied approach

    CERN Document Server

    Klotzkin, David J


    This textbook provides a thorough and accessible treatment of semiconductor lasers from a design and engineering perspective. It includes both the physics of devices as well as the engineering, designing, and testing of practical lasers. The material is presented clearly with many examples provided. Readers of the book will come to understand the finer aspects of the theory, design, fabrication, and test of these devices and have an excellent background for further study of optoelectronics. This book also: ·         Provides a multi-faceted approach to explaining the theories behind semiconductor lasers, utilizing mathematical examples, illustrations, and written theoretical presentations ·         Offers a balance of relevant optoelectronic topics, with specific attention given to distributed feedback lasers, growth techniques, and waveguide cavity design ·         Provides a summary of every chapter, worked examples, and problems for readers to solve ·         Empasizes...

  7. Design and construct of a tunable semiconductor laser

    Directory of Open Access Journals (Sweden)

    J. Sabbaghzadeh


    Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

  8. Interacting collective modes in a laser cavity

    International Nuclear Information System (INIS)

    Graca, E.L.; Brito, A.L. de; Baseia, B.


    Collective operators are defined for the quantized radiation field in a one-dimensional laser cavity coupled to a semi-infinite outside region and the overlaps of neighbouring collective modes are considered to show how they modify, in the linear appoximation, the time evolution of the radiation field below threshold. The model and procedure work directly within a continuous spectrum of modes and allow us to get an improved insight on the prescription for the laser field in single-mode operation. (Author) [pt

  9. Asymmetrically excited semiconductor injection laser

    International Nuclear Information System (INIS)

    Ladany, I.; Marinelli, D.P.; Kressel, H.; Cannuli, V.M.


    A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region

  10. Microresonators for organic semiconductor and fluidic lasers


    Vasdekis, Andreas E.


    This thesis describes a number of studies of microstructured optical resonators, designed with the aim of enhancing the performance of organic semiconductor lasers and exploring potential applications. The methodology involves the micro-engineering of the photonic environment in order to modify the pathways of the emitted light and control the feedback mechanism. The research focuses on designing new organic microstructures using established semi-analytical and numerical method...

  11. Squeezing in an injection-locked semiconductor laser (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.


    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  12. Control of ring lasers by means of coupled cavities

    DEFF Research Database (Denmark)

    Abitan, Haim; Andersen, Ulrik Lund; Skettrup, Torben


    Summary form only. Coupling of optical cavities offers a means of controlling the properties of one cavity (e.g. a laser) by making adjustments to another, external cavity. In this contribution we consider a unidirectional ring laser (bow-tie laser) coupled to an external ring cavity. Using...... different configurations we can control the out-coupling from the ring laser thereby influencing the threshold and the circulating power in the different ring cavities. This may be used to obtain the best balance between the passive losses and a nonlinear loss such as e.g. conversion to the second harmonic...... or operation of an optical parametric oscillator....

  13. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years (United States)

    Calvez, S.; Adams, M. J.


    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  14. High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links. (United States)

    Lee, Jin Hyoung; Shubin, Ivan; Yao, Jin; Bickford, Justin; Luo, Ying; Lin, Shiyun; Djordjevic, Stevan S; Thacker, Hiren D; Cunningham, John E; Raj, Kannan; Zheng, Xuezhe; Krishnamoorthy, Ashok V


    A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator (SOI) platform and experimental results with high output power are demonstrated. A III-V semiconductor gain chip is edge-coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer-scale characterization. The laser output power reaches 20 mW and the highest wall-plug efficiency of 7.8% is measured at 17.3 mW in un-cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy-efficient Si CMOS photonic links.

  15. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.


    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  16. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro


    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  17. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey


    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  18. Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

    International Nuclear Information System (INIS)

    Cotta, E A; Matinaga, F M


    We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

  19. Guiding effect of quantum wells in semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N


    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  20. Study on the characteristic and application of DFB semiconductor lasers under optical injection for microwave photonics (United States)

    Pu, Tao; Wang, Wei wei


    In order to apply optical injection effect in Microwave Photonics system, The red-shift effect of the cavity mode of the DFB semiconductor laser under single-frequency optical injection is studied experimentally, and the red-shift curve of the cavity mode is measured. The wavelength-selective amplification property of the DFB semiconductor laser under multi-frequency optical injection is also investigated, and the gain curves for the injected signals in different injection ratios are measured in the experiment. A novel and simple structure to implement a single-passband MPF with wideband tunability based on the wavelength-selective amplification of a DFB semiconductor laser under optical injection is proposed and experimentally demonstrated. MPFs with center frequency tuned from 13 to 41 GHz are realized in the experiment. A wideband and frequency-tunable optoelectronic oscillator based on a directly modulated distributed feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. By optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency makes the loop oscillate without the necessary of the electrical filter. An experiment is performed; microwave signals with frequency tuned from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers.

  1. Theory of optical cavity and laser with output coupling


    氏原, 紀公雄


    A quantum-mechanical analysis of an optical cavity having output coupling is presented withapplications to the laser theory. The rigorous treatment of the output coupling allows unifiedanalysis of the optical field inside and outside of the cavity. This treatment had lead to a newexpression for the laser line-width that contained the influences of non-uniform oscillating fielddistribution of the real cavity mode as well as the deviation from the cavity field mode due to non-uniformgain satura...

  2. Miniature thermoelectric coolers for semiconductor lasers

    International Nuclear Information System (INIS)

    Semenyuk, V.A.; Pilipenko, T.V.; Albright, G.C.; Ioffe, L.A.; Rolls, W.H.


    The problem of matching thermoelectric coolers and semiconductor lasers with respect to heat flow densities and electrical currents is discussed. It is shown that the solution of this problem is accomplished by the reduction of thermoelement dimensions to the submillimeter level. Assembled with extruded thermoelectric materials, miniature coolers with a thermoelement length as short as 0.1 mm and a cross section of 0.2x0.2 mm 2 are demonstrated. Using 0.5 mm thick aluminum ceramic plates, the overall height of these miniature coolers can be as low as 1.1 mm. The devices are designed for cooling and thermally stabilizing miniature optoelectronic elements, especially semiconductor lasers. The results of device testing over a wide range of temperature and heat loads are given. This novel approach in thermoelectric cooler design represents a new step in miniaturization and reduced current requirements, with little or no loss in maximum attainable temperature difference. A ΔT max of 68 K is demonstrated with input current of 200 mA. Due to the small thermoelement length, extremely large heat flow densities at cold junctions are practical (up to 100 W/cm 2 at ΔT=0), making these devices ideal for heat intensive local sources such as injection laser diodes. Due to the extremely small sizes, these coolers have a high speed of response where a ΔT of 35 K in specimens with the thermoelement length of 0.1 mm is approximately 150 milliseconds. These micro coolers are ideal for use within the semiconductor device housing and under conditions where limitations of power, size, and electrical current predominate. copyright 1995 American Institute of Physics

  3. Laser thermoreflectance for semiconductor thin films metrology (United States)

    Gailly, P.; Hastanin, J.; Duterte, C.; Hernandez, Y.; Lecourt, J.-B.; Kupisiewicz, A.; Martin, P.-E.; Fleury-Frenette, K.


    We present a thermoreflectance-based metrology concept applied to compound semiconductor thin films off-line characterization in the solar cells scribing process. The presented thermoreflectance setup has been used to evaluate the thermal diffusivity of thin CdTe films and to measure eventual changes in the thermal properties of 5 μm CdTe films ablated by nano and picosecond laser pulses. The temperature response of the CdTe thin film to the nanosecond heating pulse has been numerically investigated using the finite-difference time-domain (FDTD) method. The computational and experimental results have been compared.

  4. Porous photonic crystal external cavity laser biosensor

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Qinglan [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Peh, Jessie; Hergenrother, Paul J. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Cunningham, Brian T. [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Department of Bioengineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)


    We report the design, fabrication, and testing of a photonic crystal (PC) biosensor structure that incorporates a porous high refractive index TiO{sub 2} dielectric film that enables immobilization of capture proteins within an enhanced surface-area volume that spatially overlaps with the regions of resonant electromagnetic fields where biomolecular binding can produce the greatest shifts in photonic crystal resonant wavelength. Despite the nanoscale porosity of the sensor structure, the PC slab exhibits narrowband and high efficiency resonant reflection, enabling the structure to serve as a wavelength-tunable element of an external cavity laser. In the context of sensing small molecule interactions with much larger immobilized proteins, we demonstrate that the porous structure provides 3.7× larger biosensor signals than an equivalent nonporous structure, while the external cavity laser (ECL) detection method provides capability for sensing picometer-scale shifts in the PC resonant wavelength caused by small molecule binding. The porous ECL achieves a record high figure of merit for label-free optical biosensors.

  5. Novel concepts for designing semiconductor lasers (United States)

    Shchukin, V. A.; Ledentsov, N. N.; Maximov, M. V.; Gordeev, N. Yu; Shernyakov, Yu M.; Payusov, A. S.; Zhukov, A. E.


    We review novel concepts and demonstrate recent experimental data for edge- emitting semiconductor lasers with broad vertical waveguide. The ultimate case for waveguide extension in the vertical direction can be implemented by using the Tilted Wave Laser (TWL) approach. A TWL is composed of a thin active waveguide (typically 0.3-2 μm) optically coupled to a thick passive waveguide (10-150 μm). A TWL with a 26 μm-thick passive waveguide demonstrated low internal loss of 1.4 cm-1, maximum pulsed power 18 W and maximum CW power 4.7 W. Vertical far field of the TWL consists of two tilted narrow lobs of 2 degrees full width at half maximum each.

  6. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.


    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  7. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...

  8. A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

    International Nuclear Information System (INIS)

    Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng


    A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

  9. Meeting to discuss laser cavity design for photon linear collider ...

    Indian Academy of Sciences (India)

    The design is fairly insensitive to displacements transverse to the beam but very sensitive to change in length of the cavity (as the power enhancement of the laser cavity is lost). In fact an accuracy of less than 1 nm is required, which implies that adaptive optics are required to maintain the cavity enhancement. Power deposit ...

  10. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.


    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  11. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard


    We discuss the implications of using monolithically integrated semiconductor lasers in high capacity optical coherent links suitable for metro applications, where the integration capabilities of semiconductor lasers make them an attractive candidate to reduce transceiver cost. By investigating...... semiconductor laser frequency noise profiles we show that carrier induced frequency noise plays an important role in system performance. We point out that, when such lasers are employed, the commonly used laser linewidth fails to estimate system performance, and we propose an alternative figure of merit that we...... name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...

  12. Cavity length dependence of mode beating in passively Q-switched Nd-solid state lasers (United States)

    Zameroski, Nathan D.; Wanke, Michael; Bossert, David


    The temporal intensity profile of pulse(s) from passively Q-switched and passively Q-switched mode locked (QSML) solid-state lasers is known to be dependent on cavity length. In this work, the pulse width, modulation depth, and beat frequencies of a Nd:Cr:GSGG laser using a Cr+4:YAG passive Q-switch are investigated as function cavity length. Measured temporal widths are linearly correlated with cavity length but generally 3-5 ns larger than theoretical predictions. Some cavity lengths exhibit pulse profiles with no modulation while other lengths exhibit complete amplitude modulation. The observed beat frequencies at certain cavity lengths cannot be accounted for with passively QSML models in which the pulse train repetition rate is τRT-1, τRT= round-trip time. They can be explained, however, by including coupled cavity mode-locking effects. A theoretical model developed for a two section coupled cavity semiconductor laser is adapted to a solid-state laser to interpret measured beat frequencies. We also numerically evaluate the temporal criterion required to achieve temporally smooth Q-switched pulses, versus cavity length and pump rate. We show that in flash lamp pumped systems, the difference in buildup time between longitudinal modes is largely dependent on the pump rate. In applications where short pulse delay is important, the pumping rate may limit the ability to achieve temporally smooth pulses in passively Q-switched lasers. Simulations support trends in experimental data. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  13. Non-markovian effects in semiconductor cavity QED: Role of phonon-mediated processes

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

    We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from the pola......We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from...

  14. Laser method for simulating the transient radiation effects of semiconductor (United States)

    Li, Mo; Sun, Peng; Tang, Ge; Wang, Xiaofeng; Wang, Jianwei; Zhang, Jian


    In this paper, we demonstrate the laser simulation adequacy both by theoretical analysis and experiments. We first explain the basic theory and physical mechanisms of laser simulation of transient radiation effect of semiconductor. Based on a simplified semiconductor structure, we describe the reflection, optical absorption and transmission of laser beam. Considering two cases of single-photon absorption when laser intensity is relatively low and two-photon absorption with higher laser intensity, we derive the laser simulation equivalent dose rate model. Then with 2 types of BJT transistors, laser simulation experiments and gamma ray radiation experiments are conducted. We found good linear relationship between laser simulation and gammy ray which depict the reliability of laser simulation.

  15. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers (United States)

    Pierścińska, D.


    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  16. Large and well-defined Rabi splitting in a semiconductor nanogap cavity. (United States)

    Uemoto, Mitsuharu; Ajiki, Hiroshi


    We propose a nanogap structure composed of semiconductor nanoparticles forming an optical cavity. The resonant excitation of excitons in the nanoparticles can generate a localized strong light field in the gap region, also called "hot spot". The spectral width of the hot spot is significantly narrow because of the small exciton damping and the dephasing at low temperature, so the semiconductor nanogap structure acts as a high-Q cavity. In addition, the interaction between light and matter at the nanogap is significantly larger than that in a conventional microcavity, because the former has a small cavity-mode volume beyond the diffraction limit. We theoretically demonstrate the large and well-defined vacuum-Rabi splitting of a two-level emitter placed inside the semiconductor nanogap cavity: the Rabi splitting energy of 1.7 meV for the transition dipole moment of the emitter (25 Debye) is about 6.3 times larger than the spectral width. An optical cavity providing such a large and well-defined Rabi splitting is highly suited for studying characteristic features of the cavity quantum electrodynamics and for the development of new applications.

  17. Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian


    A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines .......A dual line-of-sight CW lidar that measures both wind speed and direction is presented . The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared towards enhanced control of wind turbines ....

  18. Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers (United States)

    Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan


    A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

  19. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi


    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss...... are analyzed. The nonlinear transparent waveguide, i.e. an amplifier saturated to the point where the stimulated emission balances the internal losses, is shown to be analytically solvable and is a convenient vehicle for gaining qualitative understanding of the dynamics of modulated semiconductor optical...

  20. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter


    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  1. Wavelength-Agile External-Cavity Diode Laser for DWDM (United States)

    Pilgrim, Jeffrey S.; Bomse, David S.


    A prototype external-cavity diode laser (ECDL) has been developed for communication systems utilizing dense wavelength- division multiplexing (DWDM). This ECDL is an updated version of the ECDL reported in Wavelength-Agile External- Cavity Diode Laser (LEW-17090), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 14a. To recapitulate: The wavelength-agile ECDL combines the stability of an external-cavity laser with the wavelength agility of a diode laser. Wavelength is modulated by modulating the injection current of the diode-laser gain element. The external cavity is a Littman-Metcalf resonator, in which the zeroth-order output from a diffraction grating is used as the laser output and the first-order-diffracted light is retro-reflected by a cavity feedback mirror, which establishes one end of the resonator. The other end of the resonator is the output surface of a Fabry-Perot resonator that constitutes the diode-laser gain element. Wavelength is selected by choosing the angle of the diffracted return beam, as determined by position of the feedback mirror. The present wavelength-agile ECDL is distinguished by design details that enable coverage of all 60 channels, separated by 100-GHz frequency intervals, that are specified in DWDM standards.

  2. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy


    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  3. Demonstration of a home projector based on RGB semiconductor lasers. (United States)

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang


    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3.

  4. Effects of gain medium parameters on the sensitivity of semiconductor ring laser gyroscope (United States)

    Khandelwal, Arpit; Hossein, Y. S.; Syed, Azeemuddin; Sayeh, M. R.; Nayak, Jagannath


    The semiconductor gain medium has rich non-linear dynamics and several internal parameters influence the generation and propagation of light through it. With the gain medium being an integral part of semiconductor ring laser gyroscope (SRLG) cavity, its parameters affect the overall performance of the gyro. The effect is further elevated in integrated SRLG due to stronger confinement of charge carriers and photons leading to a more intense interaction between them. In this paper, we evaluate the influence of semiconductor gain medium parameters such as gain saturation coefficient, linewidth, internal quantum efficiency etc. on the sensitivity of bulk fiber-optic SRLG. Ways of controlling these parameters and optimizing their values to enhance the performance of SRLG are also discussed.

  5. Bifurcation analysis of a semiconductor laser with filtered optical feedback

    NARCIS (Netherlands)

    Erzgraeber, H.; Krauskopf, B.; Lenstra, D.


    We study the dynamics and bifurcations of a semiconductor laser with delayed filtered optical feedback, where a part of the output of the laser reenters after spectral filtering. This type of coherent optical feedback is more challenging than the case of conventional optical feedback from a simple

  6. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann


    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

  7. Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser (United States)

    Holub, M.; Shin, J.; Saha, D.; Bhattacharya, P.


    A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.

  8. Widely tunable all-fiber SESAM mode-locked Ytterbium laser with a linear cavity (United States)

    Zou, Feng; Wang, Zhaokun; Wang, Ziwei; Bai, Yang; Li, Qiurui; Zhou, Jun


    We present a widely tunable all-fiber mode-locked laser based on semiconductor saturable absorber mirror (SESAM) with a linear cavity design. An easy-to-use tunable bandpass filter based on thin film cavity technology is employed to tune the wavelength. By tuning the filter and adjusting the polarization controller, mode-locked operation can be achieved over the range of 1023 nm-1060 nm. With the polarization controller settled, mode-locked operation can be preserved and the wavelength can be continuously tuned from 1030 nm to 1053 nm. At 1030 nm, the laser delivers 9.6 mw average output power with 15.4 ps 10.96 MHz pulses at fundamental mode-locked operation.

  9. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le


    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  10. Noise equivalent circuit of a semiconductor laser diode


    Harder, Christoph; Katz, Joseph; Margalit, S.; Shacham, J.; Yariv, A.


    The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven laser diode are calculated as a function of bias current and frequency.

  11. Laser-induced shockwave propagation from ablation in a cavity

    International Nuclear Information System (INIS)

    Zeng Xianzhong; Mao Xianglei; Mao, Samuel S.; Wen, S.-B.; Greif, Ralph; Russo, Richard E.


    The propagation of laser-induced shockwaves from ablation inside of cavities was determined from time-resolved shadowgraph images. The temperature and electron number density of the laser-induced plasma was determined from spectroscopic measurements. These properties were compared to those for laser ablation on the flat surface under the same energy and background gas condition. A theoretical model was proposed to determine the amount of energy and vaporized mass stored in the vapor plume based on these measurements

  12. Commercial mode-locked vertical external cavity surface emitting lasers (United States)

    Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Head, C. Robin; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.


    In recent years, M Squared Lasers have successfully commercialized a range of mode-locked vertical external cavity surface emitting lasers (VECSELs) operating between 920-1050nm and producing picosecond-range pulses with average powers above 1W at pulse repetition frequencies (PRF) of 200MHz. These laser products offer a low-cost, easy-to-use and maintenance-free tool for the growing market of nonlinear microscopy. However, in order to present a credible alternative to ultrafast Ti-sapphire lasers, pulse durations below 200fs are required. In the last year, efforts have been directed to reduce the pulse duration of the Dragonfly laser system to below 200fs with a target average power above 1W at a PRF of 200MHz. This paper will describe and discuss the latest efforts undertaken to approach these targets in a laser system operating at 990nm. The relatively low PRF operation of Dragonfly lasers represents a challenging requirement for mode-locked VECSELs due to the very short upper state carrier lifetime, on the order of a few nanoseconds, which can lead to double pulsing behavior in longer cavities as the time between consecutive pulses is increased. Most notably, the design of the Dragonfly VECSEL cavity was considerably modified and the laser system extended with a nonlinear pulse stretcher and an additional compression stage. The improved Dragonfly laser system achieved pulse duration as short as 130fs with an average power of 0.85W.

  13. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.


    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  14. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    International Nuclear Information System (INIS)

    Minaev, V P


    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  15. Resonator fiber optic gyro employing a semiconductor laser. (United States)

    Jin, Zhonghe; Yu, Xuhui; Ma, Huilian


    Resonator fiber optic gyro (RFOG) based on the Sagnac effect has the potential to achieve the inertial navigation system requirement with a short sensing coil. Semiconductor laser is one of the key elements for integration and miniaturization of the RFOG. In this paper, an RFOG employing a semiconductor laser is demonstrated. The model of the laser frequency noise induced error in the RFOG is described. To attenuate the laser frequency noise induced error, active frequency stabilization is applied. An online laser frequency noise observation is built, as a powerful optimum criterion for the loop parameters. Moreover, the laser frequency noise observation method is developed as a new measurement tool. With a fast digital proportional integrator based on a single field programmable gate array applied in the active stabilization loop, the laser frequency noise is reduced to 0.021 Hz (1σ). It is equivalent to a rotation rate of 0.07°/h, and close to the shot noise limit for the RFOG. As a result, a bias stability of open-loop gyro output is 9.5°/h (1σ) for the integration time 10 s in an hour observed in the RFOG. To the best of our knowledge, this result is the best long-term stability using the miniature semiconductor laser.

  16. Passive cavity laser and tilted wave laser for Bessel-like beam coherently coupled bars and stacks (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Gordeev, N. Y.; Kaluzhniy, N. A.; Mintairov, S. A.; Payusov, A. S.; Shernyakov, Yu. M.; Vashanova, K. A.; Kulagina, M. M.; Schmidt, N. Y.


    Ultralarge output apertures of semiconductor gain chips facilitate novel applications that require efficient feedback of the reflected laser light. Thick (10-30 μm) and ultrabroad (>1000 μm) waveguides are suitable for coherent coupling through both near-field of the neighboring stripes in a laser bar and by applying external cavities. As a result direct laser diodes may become suitable as high-power high-brightness coherent light sources. Passive cavity laser is based on the idea of placing the active media outside of the main waveguide, for example in the cladding layers attached to the waveguide, or, as in the case of the Tilted Wave Laser (TWL) in a thin waveguide coupled to the neighboring thick waveguide wherein most of the field intensity is localized in the broad waveguide. Multimode or a single vertical mode lasing is possible depending on the coupling efficiency. We demonstrate that 1060 nm GaAs/GaAlAs-based Tilted Wave Lasers (TWL) show wall-plug efficiency up to ~55% with the power concentrated in the two symmetric vertical beams having a full width at half maximum (FWHM) of 2 degrees each. Bars with pitch sizes in the range of 25-400 μm are studied and coherent operation of the bars is manifested with the lateral far field lobes as narrow as 0.1° FWHM. As the near field of such lasers in the vertical direction represents a strongly modulated highly periodic pattern of intensity maxima such lasers or laser arrays generate Bessel-type beams. These beams are focusable similar to the case of Gaussian beams. However, opposite to the Gaussian beams, such beams are self-healing and quasi non-divergent. Previously Bessel beams were generated using Gaussian beams in combination with an axicon lens or a Fresnel biprism. A new approach does not involve such complexity and a novel generation of laser diodes evolves.

  17. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula


    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  18. A fast cavity dumper for a picosecond glass laser (United States)

    Oak, S. M.; Bindra, K. S.; Narayan, B. S.; Khardekar, R. K.


    A fast cavity dumper for picosecond glass laser has been made. The optical and electrical characterization of the cavity dumper is described. An avalanche transistor Marx bank generator drives the cavity dumper. Up to 5 kV peak amplitude and 1.5 ns fall time negative polarity step pulses are generated by the Marx bank circuit. With a capacitive load like Pockels cell the pulse fall time increases to 4 ns. Optical switching times as fast as 2 ns (10%-90%) are experimentally measured. The contrast ratio of 1000 is obtained after a double pass through an amplifier. Single picosecond pulses are produced with an energy jitter of 10%.

  19. Low-frequency fluctuations in vertical cavity lasers: Experiments versus Lang-Kobayashi dynamics

    International Nuclear Information System (INIS)

    Torcini, Alessandro; Barland, Stephane; Giacomelli, Giovanni; Marin, Francesco


    The limits of applicability of the Lang-Kobayashi (LK) model for a semiconductor laser with optical feedback are analyzed. The model equations, equipped with realistic values of the parameters, are investigated below the solitary laser threshold where low-frequency fluctuations (LFF's) are usually observed. The numerical findings are compared with experimental data obtained for the selected polarization mode from a vertical cavity surface emitting laser (VCSEL) subject to polarization selective external feedback. The comparison reveals the bounds within which the dynamics of the LK model can be considered as realistic. In particular, it clearly demonstrates that the deterministic LK model, for realistic values of the linewidth enhancement factor α, reproduces the LFF's only as a transient dynamics towards one of the stationary modes with maximal gain. A reasonable reproduction of real data from VCSEL's can be obtained only by considering the noisy LK or alternatively deterministic LK model for extremely high α values

  20. Eigenmodes of spin vertical-cavity surface-emitting lasers with local linear birefringence and gain dichroism (United States)

    Fördös, T.; Jaffrès, H.; Postava, K.; Seghilani, M. S.; Garnache, A.; Pištora, J.; Drouhin, H. J.


    We present a general method for the modeling of semiconductor lasers such as a vertical-cavity surface-emitting laser and a vertical-external-cavity surface-emitting laser containing multiple quantum wells and involving anisotropies that may reveal (i) a local linear birefringence due to the strain field at the surface or (ii) a birefringence in quantum wells due to phase amplitude coupling originating from the reduction of the biaxial D2 d symmetry group to the C2 v symmetry group at the III-V ternary semiconductor interfaces. From a numerical point of view, a scattering S-matrix recursive method is implemented using a gain or amplification tensor derived analytically from the Maxwell-Bloch equations. It enables one to model the properties of the emission (threshold, polarization, and mode splitting) from the laser with multiple quantum well active zones by searching for the resonant eigenmodes of the cavity. The method is demonstrated on real laser structures and is presently used for the extraction of optical permittivity tensors of surface strain and quantum wells in agreement with experiments. The method can be generalized to find the laser eigenmodes in the most general case of circular polarized pumps (unbalance between the spin-up and spin-down channels) and/or dichroism allowing an elliptically polarized light emission as recently demonstrated experimentally when the linear birefringence is almost compensated [Joly et al., Opt. Lett. 42, 651 (2017), 10.1364/OL.42.000651].

  1. Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm (United States)

    Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael


    We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

  2. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta


    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  3. All semiconductor laser Doppler anemometer at 1.55 microm. (United States)

    Hansen, René Skov; Pedersen, Christian


    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300 meters distance range. Especially, we will demonstrate that both the output power as well as the demanding coherence properties required from the laser source can be accomplished by an all semiconductor laser. Preliminary tests at a distance of 40 meters indicate a typical signal to noise ratio of 9 dB. This result is obtained at a clear day with an up-date rate of 12 Hz.

  4. Flexible optical clock recovery utilizing a multi-function semiconductor fiber laser (United States)

    Feng, H.; Zhao, W.; Xie, X. P.; Qian, F. C.; Wang, W.; Huang, X.; Hu, H.


    We demonstrate a multi-function fiber laser based on cross-gain modulation in a semiconductor optical amplifier (SOA). Depending on the input signals, the fiber cavity can emit a continuous wave (CW) laser, mode-locked pulses, or act as a clock recovery device. With an extra CW light overcoming the pattern effect in the clock recovery process, a 10-GHz synchronous clock sequence with <0.1 power fluctuation and <120-fs timing jitter is extracted from the transmission return-to-zero data stream. We further analyze the recovered clock properties as a function of the input signal, and find that the clock recovery system presents good stability over a large range of input signal characteristics. The multi-function fiber laser exhibits the advantages of compact configuration and low cost, which is very convenient and attractive for optical communications and signal processing.

  5. Low-cost cavity-dumped femtosecond Cr:LiSAF laser producing >100 nJ pulses. (United States)

    Demirbas, Umit; Hong, Kyung-Han; Fujimoto, James G; Sennaroglu, Alphan; Kärtner, Franz X


    We report a low-cost cavity-dumped Cr:colquiriite laser for generating enhanced pulse energies. Four single-mode laser diodes were used to pump a Cr:LiSAF laser, which was mode locked with a semiconductor saturable absorber mirror. Cavity dumping at 10 kHz repetition rate, the laser generated approximately 120 fs pulses at approximately 825 nm, with 112 nJ pulse energies and approximately 0.93 MW of peak power, using only approximately 600 mW of incident pump power. At higher dumping rates of up to 1 MHz, reduced pulse energies of 62 nJ could be generated. Two-photon absorption in the saturable absorber mirror limits pulse durations, while Q-switching instabilities limit pulse energy extraction.

  6. Optical trapping with Bessel beams generated from semiconductor lasers

    International Nuclear Information System (INIS)

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U


    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  7. Meeting to discuss laser cavity design for photon linear collider ...

    Indian Academy of Sciences (India)

    The motivation to use a cavity at the photon linear collider (PLC) is that there are 1010 electrons in each electron bunch. The small cross-section for the Compton scattering process dictates having at least 1019 photons in the laser pulse to obtain an efficient conversion of the incoming beam. This means that less than 1 in ...

  8. Thermal stability of multi-longitudinal mode laser beating frequencies in hybrid semiconductor-fiber ring lasers (United States)

    Shebl, Ahmed; Hassan, Khaled; Al-Arifi, Fares; Al-Otaibi, Mohammed; Sabry, Yasser; Khalil, Diaa


    The temperature dependence of the beating frequencies in multi-longitudinal mode hybrid semiconductor-fiber based ring lasers is studied theoretically and experimentally. The variation of the beating frequency with temperature is found to be smaller for larger cavity length and lower beating order. Measured frequency variation as low as -0.24 Hz/°C is obtained for cavity length of 2.7 km. The stability of the frequency is evaluated using the Allan variance technique. The measurement is carried out for different beating frequency orders. The lowest order beating frequency has about 20x better long-term frequency stability than the beating frequency of the 100th order.

  9. Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers (United States)


    JOURNAL OF QUANTUM ELECTRONICS, VOL. , NO. , 1 Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers Dominic F...Siriani, Member, IEEE Abstract—A generalized theoretical formalism is derived that optimizes the doping profile of semiconductor diode lasers and amplifiers...Diode lasers, semiconductor lasers, semiconduc- tor optical amplifiers. I. INTRODUCTION ELECTRICALLY injected diode lasers have been demon-strated in many

  10. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  11. On the nonlinear theory of Fabry–Perot semiconductor lasers

    International Nuclear Information System (INIS)

    Noppe, Michael G


    Fundamentals of the nonlinear theory of Fabry–Perot semiconductor lasers have been developed, an integral part of which is natural linewidth theory. The formula for gain depending on the energy flux specifies the basic nonlinear effect in a laser. Necessary conditions for stimulated emission of the first and second kind are presented. Maxwell’s equations in the gain medium are applied to obtain equations for energy flux and for the description of non-linear phase effect. Based on the nonlinear theory, a number of experiments have been simulated; it indicates that the nonlinear theory is a new paradigm in laser theory. The nonlinear theory has provided recommendations for the development of lasers with improved properties, such as lasers with increased power and lasers with reduced natural linewidth. (paper)

  12. Spatial and Spectral Brightness Enhancement of High Power Semiconductor Lasers (United States)

    Leidner, Jordan Palmer

    The performance of high-power broad-area diode lasers is inhibited by beam filamentation induced by free-carrier-based self-focusing. The resulting beam degradation limits their usage in high-brightness, high-power applications such as pumping fiber lasers, and laser cutting, welding, or marking. Finite-difference propagation method simulations via RSoft's BeamPROP commercial simulation suite and a custom-built MATLAB code were used for the study and design of laser cavities that suppress or avoid filamentation. BeamPROP was used to design a tapered, passive, multi-mode interference cavity for the creation of a self-phase-locking laser array, which is comprised of many single-mode gain elements coupled to a wide output coupler to avoid damage from local high optical intensities. MATLAB simulations were used to study the effects of longitudinal and lateral cavity confinement on lateral beam quality in conventional broad-area lasers. This simulation was expanded to design a laser with lateral gain and index prescription that is predicted to operate at or above state-of-the-art powers while being efficiently coupled to conventional telecom single-mode optical fibers. Experimentally, a commercial broad-area laser was coupled in the far-field to a single-mode fiber Bragg grating to provide grating-stabilized single-mode laser feedback resulting in measured spectral narrowing for efficient pump absorption. Additionally a 19 GHz-span, spatially resolved, self-heterodyne measurement was made of a broad-area laser to study the evolution/devolution of the mode content of the emitted laser beam with increasing power levels.

  13. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten


    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of......, and ways to reduce high-frequency jitter is discussed. The main result of the thesis is a new design of the epitaxial structure that both enables simplified fabrication and improves the properties of monolithic lasers. 40 GHz monolithic lasers with record low jitter and high power is presented as well...

  14. Theoretical Study of Semiconductor Laser under Modulation (United States)

    Boukari, O.; Hassine, L.; Dherbecourt, P.; Latry, O.; Ketata, M.; Bouchriha, H.


    In this paper we present a description of the chirp induced in a direct modulated DFB laser. Our study is follows two different approaches. The first approach is based on a resolution of the rate equations of laser; the second, on a simulation of a heterodyne system with the Optisystem software. This study enables us to visualize the chirp in the RF field. We also characterize it according to the injection current i(t) parameters, such as the amplitude and the frequency of the modulation. The aim of our study is to choose the appropriate values of these parameters, in order to use the direct modulated DFB laser as an optical tunable source for Coherent Optical Frequency Domain Reflectometry technique (C-OFDR). We demonstrate that the optical frequency of these lasers can be controlled via the injection current i(t) and it can be linearly swept (chirped) over some tens of gigahertz.

  15. Temporal laser pulse manipulation using multiple optical ring-cavities (United States)

    Nguyen, Quang-Viet (Inventor); Kojima, Jun (Inventor)


    An optical pulse stretcher and a mathematical algorithm for the detailed calculation of its design and performance is disclosed. The optical pulse stretcher has a plurality of optical cavities, having multiple optical reflectors such that an optical path length in each of the optical cavities is different. The optical pulse stretcher also has a plurality of beam splitters, each of which intercepts a portion of an input optical beam and diverts the portion into one of the plurality of optical cavities. The input optical beam is stretched and a power of an output beam is reduced after passing through the optical pulse stretcher and the placement of the plurality of optical cavities and beam splitters is optimized through a model that takes into account optical beam divergence and alignment in the pluralities of the optical cavities. The optical pulse stretcher system can also function as a high-repetition-rate (MHz) laser pulse generator, making it suitable for use as a stroboscopic light source for high speed ballistic projectile imaging studies, or it can be used for high speed flow diagnostics using a laser light sheet with digital particle imaging velocimetry. The optical pulse stretcher system can also be implemented using fiber optic components to realize a rugged and compact optical system that is alignment free and easy to use.


    DEFF Research Database (Denmark)


    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...

  17. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...... and specifications. We have measured ultrafast gain and index dynamics of SOAs in pump-and-probe experiments applying 100 fs pulses and a heterodyne detection scheme, where both amplitude and phase of the probe pulses are determined. The gain depletion, and associated index change, and the subsequent recovery afte...

  18. Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier. (United States)

    Zhang, Haijiang; Wen, Pengyue; Esener, Sadik


    We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

  19. Laser polishing for topography management of accelerator cavity surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Liang [College of William and Mary, Williamsburg, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Klopf, J. Mike [College of William and Mary, Williamsburg, VA (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Kelley, Michael J. [College of William and Mary, Williamsburg, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)


    Improved energy efficiency and reduced cost are greatly desired for advanced particle accelerators. Progress toward both can be made by atomically-smoothing the interior surface of the niobium superconducting radiofrequency accelerator cavities at the machine's heart. Laser polishing offers a green alternative to the present aggressive chemical processes. We found parameters suitable for polishing niobium in all surface states expected for cavity production. As a result, careful measurement of the resulting surface chemistry revealed a modest thinning of the surface oxide layer, but no contamination.

  20. Design and Characterisation of III-V Semiconductor Nanowire Lasers (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  1. Review on the dynamics of semiconductor nanowire lasers (United States)

    Röder, Robert; Ronning, Carsten


    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  2. Synchronous characterization of semiconductor microcavity laser beam. (United States)

    Wang, T; Lippi, G L


    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  3. Laser cooling of a semiconductor by 40 kelvin. (United States)

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua


    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  4. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S


    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  5. Comparative study of the performance of semiconductor laser based coherent Doppler lidars

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

  6. Microencapsulation of silicon cavities using a pulsed excimer laser

    KAUST Repository

    Sedky, Sherif M.


    This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the proposed technique uses short excimer laser pulses (24ns), focused onto an area of 23mm 2, to locally heat the top few microns of the substrate, while the bulk substrate remains near ambient temperature. The treatment can be applied to selected regions of the substrate, without the need for special surface treatments or a controlled environment. This work investigates the effect of varying the laser pulse energy from 400 mJ cm 2to 800 mJ cm 2, the pulse rate from 1Hz to 50Hz and the pulse count from 200 to 3000 pulses on sealing microfabricated cavities in silicon. An analytical model for the effect of holes on the surface temperature distribution is derived, which shows that much higher temperatures can be achieved by increasing the hole density. A mechanism for sealing the cavities is proposed, which indicates how complete sealing is feasible. © 2012 IOP Publishing Ltd.

  7. Development of superconducting acceleration cavity technology for free electron lasers

    International Nuclear Information System (INIS)

    Lee, Jong Min; Lee, Byung Cheol; Kim, Sun Kook; Jeong, Young Uk; Cho, Sung Oh


    As a result of the cooperative research between the KAERI and Peking University, the key technologies of superconducting acceleration cavity and photoelectron gun have been developed for the application to high power free electron lasers. A 1.5-GHz, 1-cell superconducting RF cavity has been designed and fabricated by using pure Nb sheets. The unloaded Q values of the fabricated superconducting cavity has been measured to be 2x10 9 at 2.5K, and 8x10 9 at 1.8K. The maximum acceleration gradient achieved was 12 MeV/m at 2.5K, and 20MV/m at 1.8 K. A cryostat for the 1-cell superconducting cavity has been designed. As a source of electron beam, a DC photocathode electron gun has been designed and fabricated, which is composed of a photocathode evaporation chamber and a 100-keV acceleration chamber. The efficiency of the Cs2Te photocathode is 3% nominally at room temperature, 10% at 290 deg C. The superconducting photoelectron gun system developed has been estimated to be a good source of high-brightness electron beam for high-power free electron lasers

  8. Noise equivalent circuit of a semiconductor laser diode (United States)

    Harder, C.; Margalit, S.; Yariv, A.; Katz, J.; Shacham, J.


    A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.

  9. Nonlinear gain suppression in semiconductor lasers due to carrier heating

    International Nuclear Information System (INIS)

    Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.


    We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

  10. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.


    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...... recently. These results give insight into the behavior observed on a short time-scale, but do not explain some of the pronounced features of the LFF seen for moderate feedback levels; namely the stepwise build-up and its characteristic time of about 15 steps close to the solitary laser threshold. We...

  11. Field-glass range finder with a semiconductor laser (United States)

    Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan


    This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

  12. Modes in light wave propagating in semiconductor laser (United States)

    Manko, Margarita A.


    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  13. Toward continuous-wave operation of organic semiconductor lasers. (United States)

    Sandanayaka, Atula S D; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya


    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture.

  14. Toward continuous-wave operation of organic semiconductor lasers (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya


    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  15. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)


    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  16. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit


    Cappuccio, Joseph C., Jr.


    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  17. Final report on LDRD project: Semiconductor surface-emitting microcavity laser spectroscopy for analysis of biological cells and microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; McDonald, A.E. [Sandia National Labs., Albuquerque, NM (United States). Nanostructure and Semiconductor Physics Dept.; Gourley, M.F. [Washington Hospital Center, DC (United States); Bellum, J. [Coherent Technologies, Boulder, CO (United States)


    This article discusses a new intracavity laser technique that uses living or fixed cells as an integral part of the laser. The cells are placed on a GaAs based semiconductor wafer comprising one half of a vertical cavity surface-emitting laser. After placement, the cells are covered with a dielectric mirror to close the laser cavity. When photo-pumped with an external laser, this hybrid laser emits coherent light images and spectra that depend sensitively on the cell size, shape, and dielectric properties. The light spectra can be used to identify different cell types and distinguish normal and abnormal cells. The laser can be used to study single cells in real time as a cell-biology lab-on-a-chip, or to study large populations of cells by scanning the pump laser at high speed. The laser is well-suited to be integrated with other micro-optical or micro-fluidic components to lead to micro-optical-mechanical systems for analysis of fluids, particulates, and biological cells.

  18. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry. (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul


    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  19. Transient thermal analysis of semiconductor diode lasers under pulsed operation (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.


    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  20. Reliability of vertical-cavity lasers at Hewlett-Packard (United States)

    Herrick, Robert W.; Lei, Chun; Keever, Mark R.; Lim, Sui F.; Deng, Hongyu; Dudley, Jim J.; Bhagat, Jay K.


    Vertical-Cavity Surface-Emitting Lasers (VCSELs) have rapidly been adopted for use in data communications modules due largely to the improvement in reliability over that of competing compact disc lasers. While very long mean lifetimes for VCSELs have been published elsewhere (> 5 X 106 h MTTF at 40C), telecommunications switching applications require further reduction in the early failure rate to meet targets of < 0.5% failures over 25 years at 50 - 70 degree(s)C. Therefore, a extensive reliability program is needed to measure both the wear-out lifetime and the random failure rate of the devices. The results of accelerated life tests will be presented, and we will discuss the methodology used to estimate the failure rate. Models of current and thermal acceleration will be presented. Degradation mechanisms observed in HP lasers will be briefly discussed. We also present preliminary results from HP oxide-aperture VCSELs.

  1. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song


    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  2. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves (United States)


    AFRL-AFOSR-UK-TR-2017-0009 Semiconductor laser complex dynamics: from optical neurons to optical rogue waves Christina Masoller UNIVERSIDAD...11-02-2017 2. REPORT TYPE Final 3. DATES COVERED (From - To) 30 Sep 2014 to 29 Sep 2016 4. TITLE AND SUBTITLE Semiconductor laser complex dynamics...dynamics of semiconductor lasers with two main goals: i) to advance our understanding of nonlinear and stochastic phenomena and ii) to exploit the

  3. Metal-Semiconductor Reaction Phenomena and Microstructural Investigations of Laser Induced Regrowth of Silicon on Insulators. (United States)


    tion. 3 _.34 5.0 LASER ASSISTED DIFFUSION AND ACTIVATION OF TIN FROM AN SnO 2/SiO 2 SOURCE The diffusion of impurities into a semiconductor substrate...11111.0 2 25 l22 1111111 . 12L5 .4 51 METAL- SEMICONDUCTOR REACTION PHENOMENA AND MICROSTRUCTURAL INVESTIGATIONS OF LASER INDUCED REGROWTH OF SILICON... Semiconductor Reaction Phenomena and Final Report Microstructural Investigations of Laser-Induced _Jan. I_9 t0_njani92 _ Regrowth of Silicon on

  4. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...... application in MLLs. Improved QW laser performance was demonstrated using the asymmetric barrier layer approach. The analysis of the gain characteristics showed that the high population inversion beneficial for noise reduction cannot be achieved for 10 GHz QW MLLs and would have required lowering the modal....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...

  5. Fast physical random bit generation with chaotic semiconductor lasers (United States)

    Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter


    Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

  6. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.


    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  7. Antimicrobial efficacy of semiconductor laser irradiation on implant surfaces. (United States)

    Kreisler, Matthias; Kohnen, Wolfgang; Marinello, Claudio; Schoof, Jürgen; Langnau, Ernst; Jansen, Bernd; d'Hoedt, Bernd


    This study was conducted to investigate the antimicrobial effect of an 809-nm semiconductor laser on common dental implant surfaces. Sandblasted and acid-etched (SA), plasma-sprayed (TPS), and hydroxyapatite-coated (HA) titanium disks were incubated with a suspension of S. sanguinis (ATCC 10556) and subsequently irradiated with a gallium-aluminum-arsenide (GaAlAs) laser using a 600-microm optical fiber with a power output of 0.5 to 2.5 W, corresponding to power densities of 176.9 to 884.6 W/cm2. Bacterial reduction was calculated by counting colony-forming units on blood agar plates. Cell numbers were compared to untreated control samples and to samples treated with chlorhexidine digluconate (CHX). Heat development during irradiation of the implants placed in bone blocks was visualized by means of shortwave thermography. In TPS and SA specimens, laser irradiation led to a significant bacterial reduction at all power settings. In an energy-dependent manner, the number of viable bacteria was reduced by 45.0% to 99.4% in TPS specimens and 57.6% to 99.9% in SA specimens. On HA-coated disks, a significant bacterial kill was achieved at 2.0 W (98.2%) and 2.5 W (99.3%) only (t test, P < .05). For specimens treated with CHX, the bacterial counts were reduced by 99.99% in TPS and HA-coated samples and by 99.89% in SA samples. The results of the study indicate that the 809-nm semiconductor laser is capable of decontaminating implant surfaces. Surface characteristics determine the necessary power density to achieve a sufficient bactericidal effect. The bactericidal effect, however, was lower than that achieved by a 1-minute treatment with 0.2% CHX. The rapid heat generation during laser irradiation requires special consideration of thermal damage to adjacent tissues. No obvious advantage of semiconductor laser treatment over conventional methods of disinfection could be detected in vitro.

  8. Nonlinear Optics and Nonlinear Dynamics in Semiconductor Lasers Subject to External Optical Injection

    National Research Council Canada - National Science Library

    Simpson, Thomas


    ...) arrays, and analysis of chaotic dynamics that can be induced by optical injection. Under external optical injection, all semiconductor lasers tested, conventional edge emitting Fabry Perot laser diodes, VCSELs, and distributed feedback (DFB...

  9. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    International Nuclear Information System (INIS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael


    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  10. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael


    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  11. Breath analysis using external cavity diode lasers: a review (United States)

    Bayrakli, Ismail


    Most techniques that are used for diagnosis and therapy of diseases are invasive. Reliable noninvasive methods are always needed for the comfort of patients. Owing to its noninvasiveness, ease of use, and easy repeatability, exhaled breath analysis is a very good candidate for this purpose. Breath analysis can be performed using different techniques, such as gas chromatography mass spectrometry (MS), proton transfer reaction-MS, and selected ion flow tube-MS. However, these devices are bulky and require complicated procedures for sample collection and preconcentration. Therefore, these are not practical for routine applications in hospitals. Laser-based techniques with small size, robustness, low cost, low response time, accuracy, precision, high sensitivity, selectivity, low detection limit, real-time, and point-of-care detection have a great potential for routine use in hospitals. In this review paper, the recent advances in the fields of external cavity lasers and breath analysis for detection of diseases are presented.

  12. Optimal design of radial Bragg cavities and lasers. (United States)

    Ben-Bassat, Eyal; Scheuer, Jacob


    We present a new and optimal design approach for obtaining maximal confinement of the field in radial Bragg cavities and lasers for TM polarization. The presented approach outperforms substantially the previously employed periodic and semi-periodic design schemes of such lasers. We show that in order to obtain maximal confinement, it is essential to consider the complete reflection properties (amplitude and phase) of the propagating radial waves at the interfaces between Bragg layers. When these properties are taken into account, we find that it is necessary to introduce a wider ("half-wavelength") layer at a specific radius in the "quarter-wavelength" radial Bragg stack. It is shown that this radius corresponds to the cylindrical equivalent of Brewster's angle. The confinement and field profile are calculated numerically by means of transfer matrix method.

  13. Fast wavelength tuning techniques for external cavity lasers (United States)

    Wysocki, Gerard [Princeton, NJ; Tittel, Frank K [Houston, TX


    An apparatus comprising a laser source configured to emit a light beam along a first path, an optical beam steering component configured to steer the light beam from the first path to a second path at an angle to the first path, and a diffraction grating configured to reflect back at least a portion of the light beam along the second path, wherein the angle determines an external cavity length. Included is an apparatus comprising a laser source configured to emit a light beam along a first path, a beam steering component configured to redirect the light beam to a second path at an angle to the first path, wherein the optical beam steering component is configured to change the angle at a rate of at least about one Kilohertz, and a diffraction grating configured to reflect back at least a portion of the light beam along the second path.

  14. Photon statistics and bunching of a chaotic semiconductor laser (United States)

    Guo, Yanqiang; Peng, Chunsheng; Ji, Yulin; Li, Pu; Guo, Yuanyuan; Guo, Xiaomin


    The photon statistics and bunching of a semiconductor laser with external optical feedback are investigated experimentally and theoretically. In a chaotic regime, the photon number distribution is measured and undergoes a transition from Bose-Einstein distribution to Poisson distribution with increasing the mean photon number. The second order degree of coherence decreases gradually from 2 to 1. Based on Hanbury Brown-Twiss scheme, pronounced photon bunching is observed experimentally for various injection currents and feedback strengths, which indicates the randomness of the associated emission light. Near-threshold injection currents and strong feedback strengths modify exactly the laser performance to be more bunched. The macroscopic chaotic dynamics is confirmed simultaneously by high-speed analog detection. The theoretical results qualitatively agree with the experimental results. It is potentially useful to extract randomness and achieve desired entropy source for random number generator and imaging science by quantifying the control parameters.

  15. The dynamical complexity of optically injected semiconductor lasers

    International Nuclear Information System (INIS)

    Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.


    This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

  16. An inductively heated hot cavity catcher laser ion source

    CERN Document Server

    Reponen, M; Pohjalainen, I; Rothe, S; Savonen, M; Sonnenschein, V; Voss, A


    An inductively heated hot cavity catcher has been constructed for the production of low-energy ion beams of exotic, neutron-deficient Agisotopes. A proof-of-principle experiment has been realized by implanting primary 107Ag21+ ions from a heavy-ion cyclotron into a graphite catcher. A variable-thickness nickel foil was used to degrade the energy of the primary beam in order to mimic the implantation depth expected from the heavy-ion fusion-evaporation recoils of N = Z94Ag. Following implantation, the silver atoms diffused out of the graphite and effused into the catcher cavity and transfer tube, where they were resonantly laser ionized using a three-step excitation and ionization scheme. Following mass separation, the ions were identified by scanning the frequency of the first resonant excitation step while recording the ion count rate. Ion release time profiles were measured for different implantation depths and cavity temperatures with the mean delay time varying from 10 to 600 ms. In addition, the diffusio...

  17. Transoral laser resections of oral cavity and oropharyngeal tumors

    Directory of Open Access Journals (Sweden)

    M. V. Bolotin


    Full Text Available The incidence of squamous cell carcinoma of the head and neck remains high and ranks tenth in the structure of overall cancer morbidity. Surgical radicality has remained one of the major determinants of the long-term results of treatment so far. In the period December 2014 to January 2016, our clinic performed surgical interventions as transoral laser oral cavity and oropharyngeal resections using carbon dioxide (CO2 laser in 34 patients. Tumors are most commonly located in the area of the tongue root and oropharynx in 16 (47.1 % patients, tongue (its anterior two thirds in 14 (41.2 %, and mouth floor in 4 (11.7 %. The average length of hospital stay after transoral laser resections was 10.14 days. A nasogastric tube was postoperatively placed in 6 (17.6 % patients for 8 to 17 days. According to the results of planned histological examination, surgical interventions were microscopically radical in all cases. Transoral CO2 laser resections make possible to perform rather large radical surgical interventions with a satisfactory functional and cosmetic results, without deteriorating the long-term results of treatment. 

  18. Selective mode coupling in microring resonators for single mode semiconductor lasers (United States)

    Arbabi, Amir

    absorption changes the temperature and material refractive indices. The change in the refractive indices of the core and cladding of a reflective microring changes its reflection peak wavelength and the phase of its reflectivity. Therefore, fluctuations in the laser power lead to fluctuations in the phase of the reflectivity of the reflective microring and can affect the laser linewidth. We theoretically and experimentally studied the dynamics of self-heating in microring resonators and showed that the thermal dynamics can be modeled by a transfer function with two poles and one zero. A small signal model for reflection and transmission of a reflective microring was also derived and was validated by comparing it to measurement data. To predict the characteristics of a semiconductor laser with a reflective microring mirror, we derived the small signal rate equations. These rate equations predict that the laser will be stable when it operates at moderate output powers on the long wavelength side of the reflection peak of a narrowband microring reflector. The modifications of the laser's chirp response and linewidth due to the self-heating effect are also presented. Monolithic fabrication of passive mirrors and gain sections requires an integration platform that provides both active and passive waveguides. We propose a new integration platform which does not involve epilayer regrowth and keeps the confinement factor relatively high in the active sections. Our epilayer design, fabrication process, and characterization results of lasers with passive reflectors fabricated using this platform are presented. Microring resonators by themselves can be used as laser cavities. One of the main issues with their application as a laser cavity is their mode spectra; they have closely spaced modes with very similar quality factors. Furthermore, at each resonant wavelength there are two degenerate modes with the same quality factor. We introduce a novel method to engineer the quality factors

  19. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.


    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitte...

  20. Continuously tunable pulsed Ti:Sa laser self-seeded by an extended grating cavity

    CERN Document Server

    Li, Ruohong; Rothe, Sebastian; Teigelhöfer, Andrea; Mostamand, Maryam


    A continuously tunable titanium:sapphire (Ti:Sa) laser self-seeded by an extended grating cavity was demonstrated and characterized. By inserting a partially reflecting mirror inside the cavity of a classic single-cavity grating laser, two oscillators are created: a broadband power oscillator, and a narrowband oscillator with a prism beam expander and a diffraction grating in Littrow configuration. By coupling the grating cavity oscillation into the power oscillator, a power-enhanced narrow-linewidth laser oscillation is achieved. Compared to the classic grating laser, this simple modification significantly increases the laser output power without considerably broadening the linewidth. With most of the oscillating laser power confined inside the broadband power cavity and lower power incident onto the grating, the new configuration also allows higher pump power, which is typically limited by the thermal deformation of the grating coating at high oscillation power.

  1. Blue semiconductor laser research at the University of Florida (United States)

    Zory, P. S.


    In October 1988, a research program was initiated at the University of Florida (UF) with rhe goal of developing epitaxial diode structures capable of efficient light emission in the blue-green region of the electromagnetic spectrum. Devices such as semiconductor lasers fabricated from such material would be of considerable value in areas such as high density optical storage and high definition color displays. Although diode lasers have not yet been demonstrated, considerable progress has been made in showing that ZnSe is a very good candidate for room temperature diode laser action at 470 nm. For example, room temperature photo pumped lasing was demonstrated for the first time in epitaxial thin films of ZnSe grown by MBE and MOCVD on GaAs substrates. Although GaAs is very absorbing at 470 nm, the actual waveguide losses were small leading to the possibility of developing efficient, antiguide diode light emitters. Also demonstrated were ZnSe:N/ZnSe:Cl p-n homojunction light emitting diodes fabricated using a novel nitrogen atom beam doping procedure during MBE growth. These and other results achieved in the UF blue diode laser program will be reviewed.

  2. Timing and amplitude jitter in a gain-switched multimode semiconductor laser (United States)

    Wada, Kenji; Kitagawa, Naoaki; Matsukura, Satoru; Matsuyama, Tetsuya; Horinaka, Hiromichi


    The differences in timing jitter between a gain-switched single-mode semiconductor laser and a gain-switched multimode semiconductor laser are examined using rate equations that include Langevin noise. The timing jitter in a gain-switched multimode semiconductor laser is found to be effectively suppressed by a decrease in the coherence time of the amplified spontaneous emission (ASE) based on a broad bandwidth of multimode oscillation. Instead, fluctuations in the ASE cause amplitude jitter in the pulse components of the respective modes. A pulse train of gain-switched pulses from a multimode semiconductor laser with timing jitter is equivalently simulated by assuming a high spontaneous emission factor and a short coherence time of the ASE in the single-mode semiconductor laser rate equations.

  3. Operation of a novel hot-electron vertical-cavity surface-emitting laser (United States)

    Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.


    The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

  4. Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael


    knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

  5. A design of atmospheric laser communication system based on semiconductor laser (United States)

    Rao, Jionghui; Yao, Wenming; Wen, Linqiang


    This paper uses semiconductor laser with 905nm wave length as light source to design a set of short-distance atmospheric laser communication system. This system consists of laser light source, launch modulation circuit, detector, receiving and amplifying circuit and so on. First, this paper analyzes the factors which lead to the decrease of luminous power of laser communication link under the applicable environment-specific sea level, then this paper elicits the relationship of luminous power of receiving optical systems and distance, slant angle and divergence angle which departures from the laser beam axis by using gaussian beam geometric attenuation mode. Based on the two reasons that PPM modulation theory limits the transmission rate of PPM modulation, that is, this paper makes an analysis on repetition frequency and pulse width of laser, makes theoretical calculation for typical parameters of semiconductor laser and gets the repetition frequency which is 10KHz, pulse width is50ns, the transmission rate is 71.66 Kb/s, at this time, modulation digit is 9; then this paper selects frame synchronization code of PPM modulation and provides implementation method for test; lastly, programs language based on Verilog, uses the FPGA development board to realize PPM modulation code and does simulation test and hardware test. This paper uses APD as the detector of receiving and amplifying circuit. Then this paper designs optical receiving circuit such as amplifying circuit, analog-digital conversion circuit based on the characteristics of receipt.

  6. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner


    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...

  7. Dynamics of bad-cavity-enhanced interaction with cold Sr atoms for laser stabilization

    DEFF Research Database (Denmark)

    Schäffer, S. A.; Christensen, B. T.R.; Henriksen, M. R.


    Hybrid systems of cold atoms and optical cavities are promising systems for increasing the stability of laser oscillators used in quantum metrology and atomic clocks. In this paper we map out the atom-cavity dynamics in such a system and demonstrate limitations as well as robustness of the approa...... transfer function relating input field to output field. The cavity dynamics is shown to have only little influence on the prospects for laser stabilization, making the system robust towards cavity fluctuations and ideal for the improvement of future narrow linewidth lasers....

  8. Mode-locked Pr3+-doped silica fiber laser with an external cavity

    DEFF Research Database (Denmark)

    Shi, Yuan; Poulsen, Christian; Sejka, Milan


    We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...

  9. Digital control of laser modes with an intra-cavity spatial light modulator

    CSIR Research Space (South Africa)

    Ngcobo, S


    Full Text Available In this paper we outline a simple laser cavity which produces customised on-demand digitally controlled laser modes by replacing the end-mirror of the cavity with an electrically addressed reflective phase-only spatial light modulator as a digital...

  10. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene (United States)


    Vertical External Cavity Surface Emitting Lasers). 2)! Installation of a FTIR based temperature dependent reflectivity setup for characterizing VECSELs...and SESAMs (Semiconductor Saturable Absorber Mirrors). 3)! Demonstration of up to 6 Watts CW with InAs QD (Quantum Dot) VECSELs (1250 nm) and 15...AFRL and at other university collaborators such as the University of Arizona. 2.#Installation#of#a# FTIR #based#temperature#dependent#reflectivity

  11. Cavity ignition of liquid kerosene in supersonic flow with a laser-induced plasma. (United States)

    Li, Xiaohui; Yang, Leichao; Peng, Jiangbo; Yu, Xin; Liang, Jianhan; Sun, Rui


    We have for the first time achieved cavity ignition and sustainable combustion of liquid kerosene in supersonic flow of Mach number 2.52 using a laser-induced plasma (LIP) on a model supersonic combustor equipped with dual cavities in tandem as flameholders. The liquid kerosene of ambient temperature is injected from the front wall of the upstream cavity, while the ignitions have been conducted in both cavities. High-speed chemiluminescence imaging shows that the flame kernel initiated in the downstream cavity can propagate contraflow into upstream cavity and establish full sustainable combustion. Based on the qualitative distribution of the kerosene vapor in the cavity, obtained using the kerosene planar laser-induced fluorescence technique, we find that the fuel atomization and evaporation, local hydrodynamic and mixing conditions in the vicinity of the ignition position and in the leading edge area of the cavity have combined effects on the flame kernel evolution and the eventual ignition results.

  12. Pulpal reaction in dogs following cavity preparation by Er:YAG laser (United States)

    Sekine, Y.; Ebihara, Arata; Takeda, A.; Suda, H.


    A histopathological study was performed on the tooth pulp of mongrel dogs after cavity preparation using the conventional high speed method (control group) and the newly developed Er:YAG laser system (laser group, output energy: 100 mJ, 150 mJ, and 200 mJ/pulse). All samples were divided into two groups (deep cavity and shallow cavity) according to the remaining dentin thickness (RDT) and histopathologically evaluated. After 1, 2, 4, 7 and 28 days postoperatively, there was no histopathological difference between the control group and the laser group. Er:YAG laser irradiation with three different output energies made little difference in the degree of pulpal damage. In the deep cavities, damage of the pulp was more remarkable than the shallow cavities in all groups. The efficacy of cutting rate in the laser group was not very different from the control group.

  13. Deep-red semiconductor monolithic mode-locked lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A., E-mail: [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, H. L.; Pan, J. Q. [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang, X. L.; Cui, B. F. [Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124 (China); Ding, Y. [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)


    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  14. Complex photonics: Dynamics and applications of delay-coupled semiconductors lasers


    Soriano, Miguel C.; Garcia-Ojalvo, Jordi; Mirasso, Claudio R.; Fischer, Ingo


    Complex phenomena in photonics, in particular, dynamical properties of semiconductor lasers due to delayed coupling, are reviewed. Although considered a nuisance for a long time, these phenomena now open interesting perspectives. Semiconductor laser systems represent excellent test beds for the study of nonlinear delay-coupled systems, which are of fundamental relevance in various areas. At the same time delay-coupled lasers provide opportunities for photonic applications. In this review an i...

  15. Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities

    International Nuclear Information System (INIS)

    Roppo, V.; Cojocaru, C.; Trull, J.; Vilaseca, R.; Raineri, F.; Halioua, Y.; Raj, R.; Sagnes, I.; D'Aguanno, G.; Scalora, M.


    We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.

  16. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O' Malley, Martin W.; Zutavern, Fred J.


    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  17. Improved performance of semiconductor laser tracking frequency gauge (United States)

    Kaplan, D. M.; Roberts, T. J.; Phillips, J. D.; Reasenberg, R. D.


    We describe new results from the semiconductor-laser tracking frequency gauge, an instrument that can perform sub-picometer distance measurements and has applications in gravity research and in space-based astronomical instruments proposed for the study of light from extrasolar planets. Compared with previous results, we have improved incremental distance accuracy by a factor of two, to 0.9 pm in 80 s averaging time, and absolute distance accuracy by a factor of 20, to 0.17 μm in 1000 s. After an interruption of operation of a tracking frequency gauge used to control a distance, it is now possible, using a nonresonant measurement interferometer, to restore the distance to picometer accuracy by combining absolute and incremental distance measurements.

  18. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.


    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  19. Strong Exciton-photon Coupling in Semiconductor Microcavities

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher


    The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

  20. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine (United States)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.


    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  1. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.


    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  2. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.


    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  3. Bistable output from a coupled-resonator vertical-cavity laser diode

    International Nuclear Information System (INIS)

    Fischer, A. J.; Choquette, K. D.; Chow, W. W.; Allerman, A. A.; Geib, K.


    We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 μW to the electrical power applied to the top cavity. The bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point

  4. Bistable Output from a Coupled-Resonator Vertical-Cavity Laser Diode

    Energy Technology Data Exchange (ETDEWEB)



    The authors report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 {micro}W to the electrical power applied to the top cavity. Theoretical analysis suggests that the bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point.

  5. Portable semiconductor laser system to stop internal bleeding (United States)

    Rediker, Robert H.; Durville, Frederic M.; Cho, George; Boll, James H.


    One significant cause of death during a sever trauma (gun wound or stab wound) is internal bleeding. A semiconductor diode laser system has been used in in vitro studies of cauterizing veins and arteries to stop bleeding. The conditions of laparoscopic surgery, including bleeding conditions (blood flow and pressure), are simulated. Results have been obtained both with and without using a hemostat (e.g., forceps) to temporarily stop the bleeding prior to the cautery. With the hemostat and a fiber-coupled 810-nm laser, blood vessels of up to 5 mm diameter were cauterized with an 8 W output from the fiber. Great cautions must be used in extrapolating from these in vitro results, since the exact conditions of bleeding in a living being are impossible to exactly reproduce in a laboratory in-vitro experiment. In a living being, when blood flow stops the cessation of nourishment to the vessels results in irreversible physiological changes. Also, the blood itself is different from blood in a living being because an anti-clotting agent (heparin) was added in order to inhibit the blood's natural tendency to coagulate.

  6. A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

    DEFF Research Database (Denmark)

    Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal


    A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser...

  7. Study of the effects of semiconductor laser irradiation on peripheral nerve injury (United States)

    Xiong, G. X.; Li, P.


    In order to study to what extent diode laser irradiation effects peripheral nerve injury, the experimental research was made on rabbits. Experimental results show that low-energy semiconductor laser can promote axonal regeneration and improve nervous function. It is also found that simultaneous exposure of the injured peripheral nerve and corresponding spinal segments to laser irradiation may achieve the most significant results.

  8. Breaking and Moving Hotspots in a Large Grain Nb Cavity with a Laser Beam

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, G.; Cheng, G.; Flood, R. J.; Jordan, K.; Kneisel, P.; Morrone, M. L.; Turlington, L.; Wilson, K. M.; Zhang, S.; Anlage, S. M.; Gurevich, A. V.; Nemes, G.; Baldwin, C.


    Magnetic vortices pinned near the inner surface of SRF Nb cavities are a possible source of RF hotspots, frequently observed by temperature mapping of the cavities outer surface at RF surface magnetic fields of about 100 mT. Theoretically, we expect that the thermal gradient provided by a 10 W green laser shining on the inner cavity surface at the RF hotspot locations can move pinned vortices to different pinning locations. The experimental apparatus to send the beam onto the inner surface of a photoinjector-type large-grain Nb cavity is described. Preliminary results on the changes in thermal maps observed after applying the laser heating are also reported.

  9. III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Mørk, Jesper


    Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.......Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA....

  10. Optical label switching in telecommunication using semiconductor lasers, amplifiers and electro-absorption modulators

    DEFF Research Database (Denmark)

    Chi, Nan; Christiansen, Lotte Jin; Jeppesen, Palle


    We demonstrate all-optical label encoding and updating for an orthogonally labeled signal in combined IM/FSK modulation format utilizing semiconductor lasers, semiconductor optical amplifiers and electro-absorption modulators. Complete functionality of a network node including two-hop transmissio...

  11. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr


    .... To achieve this, an intracavity Pound-Drever-Hall technique was used on a 10 GHz harmonically mode-locked semiconductor ring laser and obtained a simultaneous optical frequency comb stabilization...

  12. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    International Nuclear Information System (INIS)

    Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long


    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

  13. Fast tunable blazed MEMS grating for external cavity lasers (United States)

    Tormen, Maurizio; Niedermann, Philippe; Hoogerwerf, Arno; Shea, Herbert; Stanley, Ross


    Diffractive MEMS are interesting for a wide range of applications, including displays, scanners or switching elements. Their advantages are compactness, potentially high actuation speed and in the ability to deflect light at large angles. We have designed and fabricated deformable diffractive MEMS grating to be used as tuning elements for external cavity lasers. The resulting device is compact, has wide tunability and a high operating speed. The initial design is a planar grating where the beams are free-standing and attached to each other using leaf springs. Actuation is achieved through two electrostatic comb drives at either end of the grating. To prevent deformation of the free-standing grating, the device is 10 μm thick made from a Silicon on Insulator (SOI) wafer in a single mask process. At 100V a periodicity tuning of 3% has been measured. The first resonant mode of the grating is measured at 13.8 kHz, allowing high speed actuation. This combination of wide tunability and high operating speed represents state of the art in the domain of tunable MEMS filters. In order to improve diffraction efficiency and to expand the usable wavelength range, a blazed version of the deformable MEMS grating has been designed. A key issue is maintaining the mechanical properties of the original device while providing optically smooth blazed beams. Using a process based on anisotropic KOH etching, blazed gratings have been obtained and preliminary characterization is promising.

  14. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    International Nuclear Information System (INIS)

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.


    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

  15. Laser of optical fiber composed by two coupled cavities: application as optical fiber sensor

    International Nuclear Information System (INIS)

    Vazquez S, R.A.; Kuzin, E.A.; Ibarra E, B.; May A, M.; Shlyagin, M.; Marquez B, I.


    We show an optical fiber laser sensor which consist of two cavities coupled and three fiber Bragg gratings. We used one Bragg grating (called reference) and two Bragg gratings (called sensors), which have the lower reflection wavelength. The reference grating with the two sensors grating make two cavities: first one is the internal cavity which has 4230 m of length and the another one is the external cavity which has 4277 m of length. Measuring the laser beating frequency for a resonance cavity and moving the frequency peaks when the another cavity is put in resonance, we prove that the arrangement can be used as a two points sensor for determining the difference of temperature or stress between these two points. (Author)

  16. Study of Low Work Function Materials for Hot Cavity Resonance Ionization Laser Ion Sources

    CERN Document Server

    Catherall, R; Fedosseev, V; Marsh, B; Mattolat, C; Menna, Mariano; Österdahl, F; Raeder, S; Schwellnus, F; Stora, T; Wendt, K; CERN. Geneva. AB Department


    The selectivity of a hot cavity resonance ionization laser ion source (RILIS) is most often limited by contributions from competing surface ionization on the hot walls of the ionization cavity. In this article we present investigations on the properties of designated high-temperature, low-work function materials regarding their performance and suitability as cavity material for RILIS. Tungsten test cavities, impregnated with a mixture of barium oxide and strontium oxide (BaOSrO on W), or alternatively gadolinium hexaboride (GdB6) were studied in comparison to a standard tungsten RILIS cavity as being routinely used for hot cavity laser ionization at ISOLDE. Measurement campaigns took place at the off-line mass separators at ISOLDE / CERN, Geneva and RISIKO / University of Mainz.

  17. Study of low work function materials for hot cavity resonance ionization laser ion sources

    CERN Document Server

    Schwellnus, F; Crepieux, B; Fedosseev, V N; Marsh, B A; Mattolat, Ch; Menna, M; Österdahl, F K; Raeder, S; Stora, T; Wendta, K


    The selectivity of a hot cavity resonance ionization laser ion source (RILIS) is most often limited by contributions from competing surface ionization of the hot walls of the ionization cavity. In this article we present investigations on the properties of designated high temperature, low work function materials regarding their performance and suitability as cavity material for RILIS. Tungsten test cavities, impregnated with a mixture of barium oxide and strontium oxide (BaOSrO on W), or alternatively gadolinium hexaboride (GdB6) were studied in comparison to a standard tungsten RILIS cavity as being routinely used for hot cavity laser ionization at ISOLDE. Measurement campaigns took place at the off-line mass separators at ISOLDE/CERN, Geneva and RISIKO/University of Mainz.

  18. Hybrid metal-semiconductor cavities for multi-band perfect light absorbers and excellent electric conducting interfaces (United States)

    Huang, Zhenping; Chen, Jian; Liu, Yi; Tang, Li; Liu, Guiqiang; Liu, Xiaoshan; Liu, Zhengqi


    It is desirable for optoelectronic devices to have the capability to simultaneously achieve excellent optical and electric features. Nevertheless, most investigations were performed separately for photon and electron management. In this work, we numerically propose and demonstrate a hybrid metal-semiconductor interface, which offers multi-band perfect light absorption and simultaneously retains the naturally perfect electrical conductivity of a flat metal film. Multi-band anti-reflection and near-unity light absorption is observed in this hybrid metal-semiconductor cavity based absorber (HMSA). Our results show that, the maximal absorption above 97% and the naturally perfect electric conductivity are realizable, suggesting the capability of providing both excellent optical and electric properties. Optical Mie-like resonances in the semiconductor cavities and the hybrid coupling with plasmonic resonances by the metal resonators cooperatively support strong optical field confinement effects, which eventually create the light trapped in the HMSA. These features indicate a platform wherein excellent electrical conducting and multispectral light absorption are designed for potential optoelectronic applications.

  19. Linearly Polarized Dual-Wavelength Vertical-External-Cavity Surface-Emitting Laser (Postprint)

    National Research Council Canada - National Science Library

    Fan, Li; Fallahi, Mahmoud; Hader, Joerg; Zakharian, Aramais R; Moloney, Jerome V; Stolz, Wolfgang; Koch, Stephan W; Bedford, Robert; Murray, James T


    The authors demonstrate the multiwatt linearly polarized dual-wavelength operation in an optically pumped vertical-external-cavity surface-emitting laser by means of an intracavity tilted Fabry-Perot...

  20. Self-Starting Solid-State Laser with Dynamic Self-Adaptive Cavity

    National Research Council Canada - National Science Library

    Antipov, Oleg


    ...: The present project is directed at the development of physical principles of creation of solid-state lasers of a new class with cavity completed by dynamic holographic gratings induced in nonlinear...

  1. Tunable high-power narrow-linewidth green external-cavity GaN diode laser

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael


    A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

  2. Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael


    in the broad wavelength range from 1049 nm to 1093 nm and the beam propagation factor is improved from M2 = 2.8 to below 1.1. The laser frequency is automatically locked to the cavity resonance frequency using optical feedback. Furthermore, we show that this adaptive external cavity approach leads to efficient...

  3. Novel laser machining of optical fibers for long cavities with low birefringence. (United States)

    Takahashi, Hiroki; Morphew, Jack; Oručević, Fedja; Noguchi, Atsushi; Kassa, Ezra; Keller, Matthias


    We present a novel method of machining optical fiber surfaces with a CO₂ laser for use in Fiber-based Fabry-Perot Cavities (FFPCs). Previously FFPCs were prone to large birefringence and limited to relatively short cavity lengths (≤ 200 μm). These characteristics hinder their use in some applications such as cavity quantum electrodynamics with trapped ions. We optimized the laser machining process to produce large, uniform surface structures. This enables the cavities to achieve high finesse even for long cavity lengths. By rotating the fibers around their axis during the laser machining process the asymmetry resulting from the laser's transverse mode profile is eliminated. Consequently we are able to fabricate fiber mirrors with a high degree of rotational symmetry, leading to remarkably low birefringence. Through measurements of the cavity finesse over a range of cavity lengths and the polarization dependence of the cavity linewidth, we confirmed the quality of the produced fiber mirrors for use in low-birefringence FFPCs.

  4. Various phenomena of self-mode-locked operation in optically pumped semiconductor lasers (United States)

    Tsou, C. H.; Liang, H. C.; Huang, K. F.; Chen, Y. F.


    This work presents several optical experiments to investigate the phenomenon of self-mode locking (SML) in optically pumped semiconductor lasers (OPSLs). First of all, we systematically explore the influence of high-order transverse modes on the SML in an OPSL with a linear cavity. Experimental results reveal that the occurrence of SML can be assisted by the existence of the first high-order transverse mode, and the laser is operated in a well-behaved SML state with the existence of the TEM0,0 mode and the first high-order transverse mode. While more high-order transverse modes are excited, it is found that the pulse train is modulated by more beating frequencies of transverse modes. The temporal behavior becomes the random dynamics when too many high-order transverse modes are excited. We observe that the temporal trace exhibits an intermittent mode-locked state in the absence of high-order transverse modes. In addition to typical mode-locked pulses, we originally observe an intriguing phenomenon of SML in an OPSL related to the formation of bright-dark pulse pairs. We experimentally demonstrated that under the influence of the tiny reflection feedback, the phase locking between lasing longitudinal modes can be assisted to form bright-dark pulse pairs in the scale of round-trip time. A theoretical model based on the multiple reflections in a phase-locked multi-longitudinal-mode laser is developed to confirm the formation of bright-dark pulse pairs.

  5. Construction and characterization of external cavity diode lasers for atomic physics. (United States)

    Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick


    Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

  6. Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems (United States)

    Shchukin, V. A.; Ledentsov, N. N.; Slight, T.; Meredith, W.; Gordeev, N. Y.; Nadtochy, A. M.; Payusov, A. S.; Maximov, M. V.; Blokhin, S. A.; Blokhin, A. A.; Zadiranov, Yu. M.; Maleev, N. A.; Ustinov, V. M.; Choquette, K. D.


    A concept of passive cavity surface-emitting laser is proposed aimed to control the temperature shift of the lasing wavelength. The device contains an all-semiconductor bottom distributed Bragg reflector (DBR), in which the active medium is placed, a dielectric resonant cavity and a dielectric top DBR, wherein at least one of the dielectric materials has a negative temperature coefficient of the refractive index, dn/dT < 0. This is shown to be the case for commonly used dielectric systems SiO2/TiO2 and SiO2/Ta2O5. Two SiO2/TiO2 resonant structures having a cavity either of SiO2 or TiO2 were deposited on a substrate, their optical power reflectance spectra were measured at various temperatures, and refractive index temperature coefficients were extracted, dn/dT = 0.0021 K-1 for SiO2 and dn/dT = -0.0092 K-1 for TiO2. Using such dielectric materials allows designing passive cavity surface-emitting lasers having on purpose either positive, or zero, or negative temperature shift of the lasing wavelength dλ/dT. A design for temperature-insensitive lasing wavelength (dλ/dT = 0) is proposed. Employing devices with temperature-insensitive lasing wavelength in wavelength division multiplexing systems may allow significant reducing of the spectral separation between transmission channels and an increase in number of channels for a defined spectral interval enabling low cost energy efficient uncooled devices.

  7. Phase Locking of Laser Diode Array by Using an Off-Axis External Talbot Cavity

    International Nuclear Information System (INIS)

    Su Zhou-Ping; Zhu Zhuo-Wei; Que Li-Zhi; Zhu Yun; Ji Zhi-Cheng


    Phase locking of a laser diode array is demonstrated experimentally by using an off-axis external Talbot cavity with a feedback plane mirror. Due to good spatial mode discrimination, the cavity does not need a spatial filter. By employing the cavity, a clear and stable far-field interference pattern can be observed when the driver current is less than 14 A. In addition, the spectral line width can be reduced to 0.8 nm. The slope efficiency of the phase-locked laser diode array is about 0.62 W/A. (fundamental areas of phenomenology(including applications))

  8. Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

    DEFF Research Database (Denmark)

    Cartar, William; Mørk, Jesper; Hughes, Stephen


    We present a powerful computational approach to simulate the threshold behavior of photonic-crystal quantum-dot (QD) lasers. Using a finite-difference time-domain (FDTD) technique, Maxwell-Bloch equations representing a system of thousands of statistically independent and randomly positioned two...... on both the passive cavity and active lasers, where the latter show a general increase in the pump threshold for cavity lengths greater than N = 7, and a reduction in the nominal cavity mode volume for increasing amounts of disorder....

  9. Contribution of thermal noise to frequency stability of rigid optical cavity via Hertz-linewidth lasers

    International Nuclear Information System (INIS)

    Notcutt, Mark; Ma, L.-S.; Ludlow, Andrew D.; Foreman, Seth M.; Ye Jun; Hall, John L.


    We perform detailed studies of state-of-the-art laser stabilization to high finesse optical cavities, revealing fundamental mechanical thermal noise-related length fluctuations. We compare the frequency noise of lasers tightly locked to the resonances of a variety of rigid Fabry-Perot cavities of differing lengths and mirror substrate materials. The results are in agreement with the theoretical model proposed in K. Numata, A. Kemery, and J. Camp [Phys. Rev. Lett. 93, 250602 (2004)]. The results presented here on the fundamental limits of FP references will impact planning and construction of next generation ultrastable optical cavities

  10. All semiconductor laser Doppler anemometer at 1.55 μm

    DEFF Research Database (Denmark)

    Hansen, Rene Skov; Pedersen, Christian


    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300...


    Directory of Open Access Journals (Sweden)

    S. Terniche


    Full Text Available The purpose of this representation is to show the potentialities (Computational Time, access to the dynamic and feasibility of systematic studies of the numerical study of the nonlinear dynamics in laser cavity, assisted by software. We will give as an example, one type of cavity completely fibered composed of several elements and then studying the physical parameters of a pulse propagating into this cavity, determining its characteristics at the output. The results are interesting but we also projects to verify them experimentally by making assemblies similar to this type of cavities.

  12. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian


    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...... based wind sensors have a strong potential in a number of applications such as wind turbine control, wind resource assessment, and micrometeorology (e.g. as alternative to the construction of meteorological towers with anemometers and wind vanes)....

  13. A study on the optical parts for a semiconductor laser module

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)


    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  14. Cavities (United States)

    ... mother's bacteria from being passed to the child. Treatment of Cavities Fluoride Fillings Root canal or tooth extraction If ... to help the world be well. From developing new therapies that treat and prevent disease to helping people ...

  15. Operational characteristics of dual gain single cavity Nd:YVO laser

    Indian Academy of Sciences (India)

    diodes was varied by changing the diode laser current. The laser cavity consisted of a curved mirror (M1) with radius of curvature 80 mm. This mirror was coated for high reflectivity at the lasing wavelength (1064 nm) and high transmission at the pump wavelength (808 nm). A Nd:YVO4 crystal (C1) was placed close.

  16. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza


    We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

  17. Proposed Coupling of an Electron Spin in a Semiconductor Quantum Dot to a Nanosize Optical Cavity

    DEFF Research Database (Denmark)

    Majumdar, Arka; Nielsen, Per Kær; Bajcsy, Michal


    We propose a scheme to efficiently couple a single quantum dot electron spin to an optical nano-cavity, which enables us to simultaneously benefit from a cavity as an efficient photonic interface, as well as to perform high fidelity (nearly 100%) spin initialization and manipulation achievable in...

  18. On the importance of cavity-length and heat dissipation in GaN-based vertical-cavity surface-emitting lasers (United States)

    Liu, W. J.; Hu, X. L.; Ying, L. Y.; Chen, S. Q.; Zhang, J. Y.; Akiyama, H.; Cai, Z. P.; Zhang, B. P.


    Cavity-length dependence of the property of optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) with two dielectric distributed Bragg reflectors was investigated. The cavity lengths were well controlled by employing etching with inductively coupled plasma and chemical mechanical polishing. It was found that the lasing characteristics including threshold, slope efficiency and spontaneous emission coupling factor were substantially improved with reducing the cavity length. In comparison with the device pumped by a 400 nm pulsed laser, the lasing spectrum was featured by a red shift and simultaneous broadening with increasing the pumping energy of a 355 nm pulsed laser. Moreover, the lasing threshold was much higher when pumped by a 355 nm pulsed laser. These were explained by taking into account of the significant heating effect under 355 nm pumping. Our results demonstrate that a short cavity length and good heat-dissipation are essential to GaN-based VCSELs.

  19. Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

    Directory of Open Access Journals (Sweden)

    Paolo Bardella


    Full Text Available In the last few decades, various solutions have been proposed to increase the modulation bandwidth and, consequently, the transmission bit-rate of semiconductor lasers. In this manuscript, we discuss a design procedure for a recently proposed laser cavity realized with the monolithic integration of two distributed Bragg reflector (DBR lasers allowing one to extend the modulation bandwidth. Such an extension is obtained introducing in the dynamic response a photon-photon resonance (PPR at a frequency higher than the modulation bandwidth of the corresponding single-section laser. Design guidelines will be proposed, and dynamic small and large signal simulations results, calculated using a finite difference traveling wave (FDTW numerical simulator, will be discussed to confirm the design results. The effectiveness of the design procedure is verified in a structure with PPR frequency at 35 GHz allowing one to obtain an open eye diagram for a non-return-to-zero (NRZ digital signal up to 80 GHz . Furthermore, the investigation of the rich dynamics of this structure shows that with proper bias conditions, it is possible to obtain also a tunable self-pulsating signal in a frequency range related to the PPR design.

  20. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment (United States)

    Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans


    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  1. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)


    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  2. Selection of transverse modes in laser cavities containing waveguides and open parts

    International Nuclear Information System (INIS)

    Gurin, O V; Degtyarev, A V; Maslov, Vyacheslav A; Svich, V A; Tkachenko, V M; Topkov, A N


    The transverse modes of a submillimetre laser cavity that contains waveguides and open parts were studied theoretically and experimentally with the purpose of finding methods for mode selection. Two methods based on the filtering of the Fourier spectra of the waveguide modes and the use of their interference were substantiated numerically and realised in experiment. Special attention was paid to the mode selection in tunable lasers. Scaling laws allowing one to use the obtained results in a wide range of the cavity parameters and wavelengths are presented. (laser applications and other topics in quantum electronics)

  3. Theoretical analysis of laser-locked spectroscopy employing a confocal Fabry-Perot cavity

    International Nuclear Information System (INIS)

    Dong, Lei; Li, Linfeng; Ma, Weiguang; Zhang, Lei; Yin, Wangbao; Jia, Suotang


    A theoretical analysis of laser-locked enhanced absorption spectroscopy employing a confocal Fary-Perot cavity (CFPC) is presented. The signal-to-noise ratio and the minimum detectable absorbance, which are limited by either the shot noise or the amplitude noise due to the loose laser lock loop, are also discussed in detail. The results show that the effective absorption path length of a CFPC configuration is the same as that of the conventional nonconfocal Fary-Perot cavity configuration, with the CFPC configuration being more convenient to align without deliberate mode matching. Thus, the CFPC configuration should greatly simplify the complications of conventional laser-locked spectroscopy.

  4. III-Nitride Vertical-Cavity Surface-Emitting Lasers (United States)

    Leonard, John T.

    Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet, over the past several years we have made dramatic improvements in the lasing characteristics of these highly complex devices. Specifically, we have reduced the threshold current density from ˜100 kA/cm2 to ˜3 kA/cm2, while simultaneously increasing the output power from ˜10 muW to ˜550 muW. These developments have primarily come about by focusing on the aperture design and intracavity contact design for flip-chip dual dielectric DBR III-nitride VCSELs. We have carried out a number of studies developing an Al ion implanted aperture (IIA) and photoelectrochemically etched aperture (PECA), while simultaneously improving the quality of tin-doped indium oxide (ITO) intracavity contacts, and demonstrating the first III-nitride VCSEL with an n-GaN tunnel junction intracavity contact. Beyond these most notable research fronts, we have analyzed numerous other parameters, including epitaxial growth, flip-chip bonding, substrate removal, and more, bringing further improvement to III-nitride VCSEL performance and yield. This thesis aims to give a comprehensive discussion of the relevant underlying concepts for nonpolar VCSELs, while detailing our specific experimental advances. In Section 1, we give an overview of the applications of VCSELs generally, before describing some of the potential applications for III-nitride VCSELs. This is followed by a summary of the different material systems used to fabricate VCSELs, before going into detail on the basic design principles for developing III-nitride VCSELs. In Section 2, we outline the basic process and geometry for fabricating flip-chip nonpolar VCSELs with different aperture and intracavity contact designs. Finally, in Section 3 and 4, we delve into the experimental results achieved in the last several years, beginning with a discussion on

  5. Cavity pressure acceleration: An efficient laser-based method of production of high-velocity macroparticles

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Kasperczuk, A.; Pisarczyk, T.; Badziak, J.; Chodukowski, T.; Ullschmied, Jiří; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Pisarczyk, P.


    Roč. 95, č. 23 (2009), s. 231501-231501 ISSN 0003-6951 R&D Projects: GA MŠk(CZ) LC528; GA MŠk(CZ) 7E09092 Institutional research plan: CEZ:AV0Z20430508; CEZ:AV0Z10100523 Keywords : Laser -plasma interaction * PALS laser * cavity pressure acceleration * acceleration of macroparticles Subject RIV: BH - Optics, Masers, Laser s Impact factor: 3.554, year: 2009

  6. Tunable single and dual mode operation of an external cavity quantum-dot injection laser

    Energy Technology Data Exchange (ETDEWEB)

    Biebersdorf, A [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Lingk, C [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); De Giorgi, M [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Feldmann, J [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Sacher, J [Sacher Lasertechnik GmbH, Hannah Arendt Strasse 3-7, D-35037 Marburg (Germany); Arzberger, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Ulbrich, C [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Boehm, G [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Amann, M-C [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Abstreiter, G [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)


    We investigate quantum-dot (QD) lasers in an external cavity using Littrow and Littman configurations. Here, we report on a continuously tunable QD laser with a broad tuning range from 1047 to 1130 nm with high stability and efficient side mode suppression. The full-width at half-maximum of the laser line is 0.85 nm determined mainly by the quality of the external grating. This laser can be operated in a dual-mode modus, where the mode-spacing can be tuned continuously between 1.1 and 34 nm. Simultaneous emission of the two laser modes is shown by sum frequency generation experiments.

  7. Coherent stacking of picosecond laser pulses in a high-Q optical cavity for accelerator applications

    International Nuclear Information System (INIS)

    Androsov, V.P.; Karnaukhov, I.M.; Telegin, Yu.N.


    We have performed the harmonic analysis of the steady-state coherent pulse-stacking process in a high-Q Fabry-Perot cavity. The expression for the stacked pulse shape is obtained as a function of both the laser cavity and pulse-stacking cavity parameters. We have also estimated the pulse power gains attainable in the laser-optical system of NESTOR storage ring, which is under development at Kharkov Institute of Physics and Technology. It is shown that high power gains (∼10 4 ) can be, in principle, achieved in a cavity, formed with low-absorption, high reflectivity (R ∼ 0.9999) mirrors, if the laser cavity length will differ exactly by half wavelength from the pulse-stacking cavity length. It implies development of the sophisticated frequency stabilization loop for maintaining the cavity length constant within a sub-nanometer range. At the same time, power gains of ∼10 3 can be obtained with medium reflectivity mirrors (R ∼ 0.999) at considerably lower cost

  8. Rf transfer in the Coupled-Cavity Free-Electron Laser Two-Beam Accelerator

    International Nuclear Information System (INIS)

    Makowski, M.A.


    A significant technical problem associated with the Coupled-Cavity Free-Electron Laser Two-Beam Accelerator is the transfer of RF energy from the drive accelerator to the high-gradient accelerator. Several concepts have been advanced to solve this problem. This paper examines one possible solution in which the drive and high-gradient cavities are directly coupled to one another by means of holes in the cavity walls or coupled indirectly through a third intermediate transfer cavity. Energy cascades through the cavities on a beat frequency time scale which must be made small compared to the cavity skin time but large compared to the FEL pulse length. The transfer is complicated by the fact that each of the cavities in the system can support many resonant modes near the chosen frequency of operation. A generalized set of coupled-cavity equations has been developed to model the energy transfer between the various modes in each of the cavities. For a two cavity case transfer efficiencies in excess of 95% can be achieved. 3 refs., 2 figs

  9. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru


    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  10. Trends in packaging of high power semiconductor laser bars

    Energy Technology Data Exchange (ETDEWEB)

    Solarz, R.W.; Emanuel, M.A.; Skidmore, J.A.; Freitas, B.L.; Krupke, W.F.


    Several different approaches to packaging high power diode laser bars for pumping solid state lasers or for direct diode laser applications are examined. The benefit and utility of each package is strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made.

  11. Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis

    International Nuclear Information System (INIS)

    Müller, M; Gault, B; Smith, G D W; Grovenor, C R M


    Atom probe tomography has recently experienced a renaissance, strongly promoted by the revival of pulsed laser atom probe. The technique is now widely employed to study semiconductor materials at the nanometre level. This paper summarises some aspects of the accuracy of pulsed laser atom probe relevant to semiconductor applications. It is shown that laser pulsing can reduce the lateral resolution due to thermally stimulated surface migration. Moreover, the commonly observed cluster ions can undergo field dissociation which results in an increased probability of ion loss due to pile-up effects at the detector. Field dissociation can also induce a new type of local magnification that increases spatial inaccuracy in the data reconstruction. These effects can be reduced by an appropriate choice of experimental parameters. Despite these difficulties, the atom probe technique can provide unparalleled insight into the nanoscale structure and chemistry of a wide range of semiconductor devices.

  12. Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael


    . The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

  13. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael


    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

  14. Cavities (United States)

    ... Additional Content Medical News Cavities ˈkav-ət-ē (Dental Caries) By James T. Ubertalli, DMD, Private Practice, Hingham, ... access to dental care, and better treatment for tooth decay and periodontal disease. When teeth are lost, chewing is greatly hindered, and speaking ...

  15. Cavity-induced mirror-mirror entanglement in a single-atom Raman laser (United States)

    Teklu, Berihu; Byrnes, Tim; Khan, Faisal Shah


    We address an experimental scheme to analyze the optical bistability and the entanglement of two movable mirrors coupled to a two-mode laser inside a doubly resonant cavity. With this aim we investigate the master equations of the atom-cavity subsystem in conjunction with the quantum Langevin equations that describe the interaction of the mirror cavity. The parametric amplification-type coupling induced by the two-photon coherence on the optical bistability of the intracavity mean photon numbers is found and investigated. Under this condition, the optical intensities exhibit bistability for all large values of cavity laser detuning. We also provide numerical evidence for the generation of strong entanglement between the movable mirrors and show that it is robust against environmental thermalization.

  16. The system of enclosed optical cavities as a tool for laser photons storing

    International Nuclear Information System (INIS)

    Androsov, V.P.; Karnaukhov, I.M.; Telegin, Yu.N.


    The calculation of the system consisting of two optical cavities enclosed one into another is performed in the plane-wave approximation. It is shown that under definite conditions one can obtain an enhancement of the electromagnetic field in the internal cavity as compared to the case of direct excitation of the cavity with an electromagnetic wave of the same amplitude. The comparative analysis of these two approaches is carried out. We suppose to apply the proposed system with moderate-reflectivity mirrors (R=0.99) for accumulating laser photons in the optical cavity of the X-ray source LESR-N100 based on Compton scattering of the laser beam on relativistic electrons stored in the ring

  17. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.


    A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

  18. The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper


    , we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad-type...

  19. Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson‐localized Random Cavities

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren


    We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement of the spontan...

  20. Vertical-cavity laser with a novel grating mirror

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol

    Hybrid III-V on silicon (Si) ‘vertical cavity lasers’ (hybrid VCLs), which can emit light laterally into a Si waveguide, are fabricated and investigated. The Si-integrated hybrid VCL consists of a top dielectric Bragg reflector (DBR), a III-V active layer, and a bottom high contrast grating (HCG...... VCLs have been fabricated. The first version of hybrid VCL is designed for demonstrating in-plane emission into a Si waveguide. The in-plane emission is enabled by the bottom HCG abutting the Si waveguide, which not only functions as a highly reflective mirror but also routes the light from...... dispersion has been observed and discussed, which is unique for HCG-based vertical cavities. The second version proves the potential for high-speed operation of hybrid VCL structure. In the hybrid VCL structure, the effective cavity length is substantially reduced by using a dielectric DBR and a TM-HCG...

  1. 980-nm 14-pin butterfly module dual-channel CW QW semiconductor laser for pumping (United States)

    Deng, Yun; Yan, Changling; Qu, Yi; Li, Hui; Wang, Yuxia; Gao, Xin; Qiao, Zhongliang; Li, Mei; Qu, Bowen; Lu, Peng; Bo, Baoxue


    Nowadays, with its mature progress, the 790 nm - 1000 nm wavelength semiconductor laser is widely used in the fields of laser machining, laser ranging, laser radar, laser imaging, laser anti-counterfeit, biomedical and etc. Best of all, the 980 nm wavelength laser has its widespread application in the pumping source of Er3+ -doped fiber amplifier, optic fiber gyroscopes and other devices. The output wavelength of the fiber amplifier which takes the 980 nm wavelength laser as its pumping source is between 1060 nm and 1550 nm. This type of laser has its extremely wide range of applications in optical communication and other fields. Moreover, some new application domains keep constantly being developed. The semiconductor laser with the dual-channel ridge wave guide and the 980 nm emission wavelength is presented in this paper. In our work, we fabricated Lasers with the using of multi-quantum well (MQW) wafer grew by MBE, and the PL-wavelength of the MQW was 970 nm. The standard photofabrication method and the inductively coupled plasma (ICP) etching technology are adopted in the process of making dual-channel ridge wave guide with the width of 4 μm and height of 830 nm. In the state of continuous work at room temperature, the laser could output the single mode beam of 70 mW stably under the current of 100 mA. The threshold current of the laser diode is 17 mA and the slope efficiency is 0.89 W/A. The 3 dB spectrum bandwidth of the laser beam is 0.2 nm. This laser outputs its beam by a pigtail fiber on which Bragg grating for frequency stabilization is carved. The laser diode, the tail fiber, and the built-in refrigeration and monitoring modules are sealed in a 14-pin butterfly packaging. It can be used directly as the pumping source of Er3+ - doped fiber amplifier or optic fiber gyroscopes.

  2. Q-switched operation with Fox-Smith-Michelson laser cavity

    International Nuclear Information System (INIS)

    Huang, X; Huang, L; Gong, M


    A new kind of three-mirror composite cavity, Fox-Smith-Michelson cavity has been configured. This laser cavity is capable of high power output, owing to the low threshold of Michelson cavity. Also, thanks to the mode selection function of Fox-Smith cavity, stable pulses at high repetition rate can be generated. In our experiment, 15.54 W CW output at 1064 nm has been achieved, with an optic-to-optic conversion efficiency of 42.2%. At the Q-switching repetition rate of 100 kHz, the average output power is 11.92 W, with an optic-to-optic conversion efficiency of 38.2%. For Q-switching frequency from 30 kHz to 100 kHz, the pulse width variation is below 4.4% and the amplitude variation is below 4.8%

  3. Polarization-selectable cavity locking method for generation of laser Compton scattered γ-rays. (United States)

    Kosuge, Atsushi; Mori, Michiaki; Okada, Hajime; Hajima, Ryoichi; Nagashima, Keisuke


    Nowadays, generation of energy-tunable, monochromatic γ-rays is needed to establish a nondestructive assay method of nuclear fuel materials. The γ-rays are generated by collision of laser photons stored in a cavity and relativistic electrons. We propose a configuration of an enhancement cavity capable of performing polarization control fabricated by a combination of a four-mirror ring cavity with a small spot inside a cavity and a three-mirror of reflective optics as an image inverter for polarization-selectable γ-rays. The image inverter introduces a phase shift of specific polarization which can be used to generate an error signal to lock an optical cavity at a resonance condition.

  4. Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides (United States)

    Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.


    Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or "IR-AFPA", adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.

  5. Higher-order mode-based cavity misalignment measurements at the free-electron laser FLASH

    Directory of Open Access Journals (Sweden)

    Thorsten Hellert


    Full Text Available At the Free-Electron Laser in Hamburg (FLASH and the European X-Ray Free-Electron Laser, superconducting TeV-energy superconducting linear accelerator (TESLA-type cavities are used for the acceleration of electron bunches, generating intense free-electron laser (FEL beams. A long rf pulse structure allows one to accelerate long bunch trains, which considerably increases the efficiency of the machine. However, intrabunch-train variations of rf parameters and misalignments of rf structures induce significant trajectory variations that may decrease the FEL performance. The accelerating cavities are housed inside cryomodules, which restricts the ability for direct alignment measurements. In order to determine the transverse cavity position, we use a method based on beam-excited dipole modes in the cavities. We have developed an efficient measurement and signal processing routine and present its application to multiple accelerating modules at FLASH. The measured rms cavity offset agrees with the specification of the TESLA modules. For the first time, the tilt of a TESLA cavity inside a cryomodule is measured. The preliminary result agrees well with the ratio between the offset and angle dependence of the dipole mode which we calculated with eigenmode simulations.

  6. Higher-order mode-based cavity misalignment measurements at the free-electron laser FLASH (United States)

    Hellert, Thorsten; Baboi, Nicoleta; Shi, Liangliang


    At the Free-Electron Laser in Hamburg (FLASH) and the European X-Ray Free-Electron Laser, superconducting TeV-energy superconducting linear accelerator (TESLA)-type cavities are used for the acceleration of electron bunches, generating intense free-electron laser (FEL) beams. A long rf pulse structure allows one to accelerate long bunch trains, which considerably increases the efficiency of the machine. However, intrabunch-train variations of rf parameters and misalignments of rf structures induce significant trajectory variations that may decrease the FEL performance. The accelerating cavities are housed inside cryomodules, which restricts the ability for direct alignment measurements. In order to determine the transverse cavity position, we use a method based on beam-excited dipole modes in the cavities. We have developed an efficient measurement and signal processing routine and present its application to multiple accelerating modules at FLASH. The measured rms cavity offset agrees with the specification of the TESLA modules. For the first time, the tilt of a TESLA cavity inside a cryomodule is measured. The preliminary result agrees well with the ratio between the offset and angle dependence of the dipole mode which we calculated with eigenmode simulations.

  7. Comparison of Dentin Permeability After Tooth Cavity Preparation with Diamond Bur and Er:YAG Laser

    Directory of Open Access Journals (Sweden)

    Masoumeh Hasani Tabatabaei


    Full Text Available Objectives: The aim of this study was to compare the permeability of dentin after using diamond bur and Er:YAG laser.Materials and Methods: Seventy-two recently extracted, intact, and restoration-free human permanent molars were used in this study. The samples were randomly divided into three groups of 24 each and class I cavities were prepared as follows. Group 1: High speed diamond bur with air and water spray. Group 2: Er:YAG laser. Group 3: Er:YAG laser followed by additional sub-ablative laser treatment. Each group consisted of two subgroups with different cavity depths of 2mm and 4mm.  The entire cavity floor was in dentin. Two samples from each subgroup were observed under scanning electron microscope (SEM. The external surfaces of other samples were covered with nail varnish (except the prepared cavity and immersed in 0.5% methylene blue solution for 48 hours.  After irrigation of samples with water, they were sectioned in bucco-lingual direction. Then, the samples were evaluated under a stereomicroscope at ×160 magnification. The data were analyzed using two-way ANOVA and Tukey’s HSD test.Results: Two-way ANOVA showed significant difference in permeability between groups 2 and 3 (laser groups with and without further treatment and group 1 (bur group. The highest permeability was seen in the group 1. There was no significant difference in dentin permeability between groups 2 and 3 and no significant difference was observed between different depths (2mm and 4mm.Conclusion: Cavities prepared by laser have less dentin permeability than cavities prepared by diamond bur.

  8. Optical feedback in dfb quantum cascade laser for mid-infrared cavity ring-down spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Terabayashi, Ryohei, E-mail:; Sonnenschein, Volker, E-mail:; Tomita, Hideki, E-mail:; Hayashi, Noriyoshi, E-mail:; Kato, Shusuke, E-mail:; Jin, Lei, E-mail:; Yamanaka, Masahito, E-mail:; Nishizawa, Norihiko, E-mail: [Nagoya University, Department of Quantum Engineering, Graduate School of Engineering (Japan); Sato, Atsushi, E-mail:; Nozawa, Kohei, E-mail:; Hashizume, Kenta, E-mail:; Oh-hara, Toshinari, E-mail: [Sekisui Medical Co., Ltd., Drug Development Solutions Center (Japan); Iguchi, Tetsuo, E-mail: [Nagoya University, Department of Quantum Engineering, Graduate School of Engineering (Japan)


    A simple external optical feedback system has been applied to a distributed feedback quantum cascade laser (DFB QCL) for cavity ring-down spectroscopy (CRDS) and a clear effect of feedback was observed. A long external feedback path length of up to 4m can decrease the QCL linewidth to around 50kHz, which is of the order of the transmission linewidth of our high finesse ring-down cavity. The power spectral density of the transmission signal from high finesse cavity reveals that the noise at frequencies above 20kHz is reduced dramatically.

  9. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo


    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized.......We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  10. A comparison of Er, Cr: YSGG laser with ultrasonic preparation on the seal of retrograde cavities (United States)

    Roghanizad, Nasrin; Kalhori, Katayoun AM; Khalilak, Zohreh; Esmaeili, Maryam Ali; de Fatima Zanirato Lizarelli, Rosane


    Background and aim: The aim of this in vitro study was to compare Er, Cr: YSGG laser with ultrasonic preparation on the seal of retrograde cavities. Materials and methods: Twenty-eight maxillary anterior teeth were used in this study. After removing the crowns, the canals were prepared with the step-back technique and filled with guttapercha. Three millimeters below the apex; each root was cut with a fissure diamond bur. The root surfaces were then covered with nail polish and three millimeters deep retrograde class I cavities were prepared, using Er, Cr: YSGG laser (group L=12 roots) or ultrasonic retro-tip (group U=12 roots). Four roots were arranged for negative and positive control groups. Retrograde cavities were then filled with mineral trioxide aggregate (MTA) and teeth were placed in 2% methylene blue dye for 72 hours. The amount of dye penetration in sagittal sections of each tooth was measured with a stereomicroscope. An independent sample t-test was used for statistical analysis. Results: Cavities prepared with the Er, Cr: YSGG laser (1.61 + 0.81) showed significantly less micro-leakage than those prepared with the ultrasound (2.55+ 1.84) (P value =0.02). Conclusions: Under the conditions of this research, the use of Er, Cr: YSGG laser for retrograde cavity preparation causes significantly less apical leakage and may increase the success rate of endodontic surgeries. PMID:25941423

  11. Assessing the Performance of the Laser Fluorescence Technique in Detecting Proximal Caries Cavities

    Directory of Open Access Journals (Sweden)

    Majid Akbari

    Full Text Available Introduction: Diagnosing the necessity of cavity preparation and restoration in demineralized proximal areas is always considered as a challenge in restorative treatment planning. The purpose of this study was to assess the performance of the laser fluorescence (LF technique in detection of proximal cavities.Materials & Methods: In this clinical trial, 44 proximal surfaces in 38 dental students were evaluated. The selected patients had radiolucent proximal lesions restricted to inner half of enamel or outer third of dentine in bitewing radiographs (BW. DIAGNOdent pen (LF pen device was used to determine the presence or absence of caries cavities in suspected proximal surfaces. Orthodontic elastic separators were then placed in the contact areas to provide enough space for direct visual and tactile examination. The sensitivity, specificity and accuracy of the laser fluorescence technique were calculated versus the reference standard. The ROC curve was drawn and the best cut-off to determine the presence or absence of proximal cavities was determined.Results: Using DIAGNOdent pen, the optimal cut-off for detecting proximal cavities was 18. The sensitivity, specificity and accuracy of DIAGNOdent pen for diagnosing proximal caries cavities were 100 per cent, 97.3 per cent and 97.7 per cent, respectively. Conclusion: Due to the high diagnostic accuracy of DIAGNOdent pen in detecting proximal caries cavities, it can be used as a valuable supplement in restorative treatment planning.

  12. Nonlinear resonance phenomena of a doped fibre laser under cavity ...

    Indian Academy of Sciences (India)

    Harmonic resonance leads to period-1 bistability and hysteresis. Inside the period-2 sub-harmonic resonance region, the laser exhibits Feigenbaum sequence and generalized bistability. Keywords. Fibre lasers; chaos; modulation; nonlinear oscillators; optical bistability. PACS Nos 05.45.Ac; 42.55.Wd; 05.45.Tp; 42.55.Rz.

  13. Ultrafast Optics: Vector Cavity Laser - Physics and Technology (United States)


    soliton bunch ( video ). (a) Soliton bunch moving in the cavity (Media 1); (b) Solitons oscillating in the bunch (Media 2). At a relatively stronger...A. Kudlinski, A. Bendahmane, D. Labat, S. Virally , R. T. Murray, E. J. R. Kelleher, and A. Mussot, "simultaneous scalar and cross-phase modulation

  14. Ultrafast Optics: Vector Cavity Fiber Lasers - Physics and Technology (United States)


    soliton bunch ( video ). (a) Soliton bunch moving in the cavity (Media 1); (b) Solitons oscillating in the bunch (Media 2). At a relatively stronger...A. Kudlinski, A. Bendahmane, D. Labat, S. Virally , R. T. Murray, E. J. R. Kelleher, and A. Mussot, "simultaneous scalar and cross-phase modulation

  15. Ultrafast Optics - Vector Cavity Lasers: Physics and Technology (United States)


    soliton bunch ( video ). (a) Soliton bunch moving in the cavity (Media 1); (b) Solitons oscillating in the bunch (Media 2). At a relatively stronger...A. Kudlinski, A. Bendahmane, D. Labat, S. Virally , R. T. Murray, E. J. R. Kelleher, and A. Mussot, "simultaneous scalar and cross-phase modulation

  16. Nd:YAG laser in endodontics: filling-material edge bordering on a root channel laser cavity (United States)

    Belikov, Andrei V.; Sinelnik, Yuri A.; Moroz, Boris T.; Pavlovskaya, Irina V.


    For the very first time it is represented a study of filling material edge bordering upon root channel cavity modified with a laser. As a filling material it is used a glass ionomer cement. It is demonstrated that Nd:YAG laser radiation effects on increase of grade of edge bordering on the average of 20 - 30% at temperature rise of no more than 2 - 3 degrees in periodontium area in a period of operation.

  17. Cavity-polariton interaction mediated by coherent acoustic phonons in semiconductor microcavities

    DEFF Research Database (Denmark)

    de Lima, Mauricio; Hey, Rudolf; Santos, Paul

    (SAWs) in a GaAs QW embedded in a (Al,Ga)As/AlAs microcavity. The periodic modulation introduced by the phonons folds the cavity-polariton dispersion within a mini-Brillouin zone (MBZ) defined by the phonon wave vector ($k_\\mathrm{SAW}$). The appearance of well-defined mini-gaps at the edge of the MBZ...

  18. Microscopic theory of phonon-induced effects on semiconductor quantum dot decay dynamics in cavity QED

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, P.


    We investigate the influence of the electron-phonon interaction on the decay dynamics of a quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction has important consequences on the dynamics, especially when the quantum dot and cavity are tuned out of resonance...

  19. A review of energy bandgap engineering in III V semiconductor alloys for mid-infrared laser applications (United States)

    Yin, Zongyou; Tang, Xiaohong


    Semiconductor lasers emitting in mid-infrared (IR) range, 2-5 μm, have many important applications in semiconductor industries, military, environmental protection, telecommunications, molecular spectroscopy, biomedical surgery and researches. Different designs of the reactive regions in mid-IR laser structures have been investigated for achieving high performance devices. In this article, semiconductor mid-IR lasers with double heterostructure, quantum well, quantum cascade, quantum wire, quantum dash and quantum dot active regions have been reviewed. The performance of the lasers with these different active regions and the development of the newly emerging III-V-N materials for mid-IR applications have been discussed in details.

  20. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection


    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O


    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  1. Prospects and merits of metal-clad semiconductor lasers from nearly UV to far IR


    Khurgin, Jacob B.


    Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, wit...

  2. Laser cavities with self-pumped phase conjugation by mixing of four waves in an amplifier

    International Nuclear Information System (INIS)

    Sillard, Pierre


    The purpose of this research thesis is to characterise a new type of cavities with self-pumped phase conjugation which uses a mixing of four waves degenerated in a solid amplifier. After a definition of phase conjugation and a brief overview of the history of this technique, the author describes and compares the different laser architectures with phase conjugation. He explains benefits and perspectives related to cavities with self-pumped phase conjugation using a mixing of four waves in an amplifier. He develops the necessary formalism for the resolution of the coupled equations of four wave mixing in transient regime for a resonant and saturated non-linearity. He shows how these results can be applied to solid amplifiers, in particularly to the Nd:YAG amplifier which is used in all experiments. In the next part, the author describes the principle and characteristics of cavity with self-pumped phase conjugation injected by another laser. An experiment is performed with two conventional Nd:YAG amplifiers pumped by flash lamps. The excellent performance of the cavity allows the study of cavity without this injection, but self-oscillating is to be envisaged, and a modelling of self-oscillating cavities is proposed and studied. Results are compared with those obtained with two N:YAG amplifiers pumped by flash lamps. Polarisation properties of the self-oscillating cavity are also studied. Finally, the author reports an experimental validation of a cavity with self-pumped phase conjugation all in solid state, pumped by laser diodes (a more efficient pumping) [fr

  3. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating (United States)

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin


    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  4. III-V/SOI vertical cavity laser with in-plane output into a Si waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta


    We experimentally demonstrate an optically-pumped III-V-on-SOI hybrid vertical-cavity laser that outputs light into an in-plane Si waveguide, using CMOS-compatible processes. The laser operates at 1.49 $\\mu$m with a side-mode suppression-ratio of 27 dB and has a similar threshold as long-waveleng......We experimentally demonstrate an optically-pumped III-V-on-SOI hybrid vertical-cavity laser that outputs light into an in-plane Si waveguide, using CMOS-compatible processes. The laser operates at 1.49 $\\mu$m with a side-mode suppression-ratio of 27 dB and has a similar threshold as long...

  5. Towards passive and active laser stabilization using cavity-enhanced atomic interaction

    DEFF Research Database (Denmark)

    Schäffer, Stefan Alaric; Christensen, Bjarke Takashi Røjle; Rathmann, Stefan Mossor


    Ultra stable frequency references such as the ones used in optical atomic clocks and for quantum metrology may be obtained by stabilizing a laser to an optical cavity that is stable over time. State-of-the-art frequency references are constructed in this way, but their stabilities are currently...... experimental efforts derived from these proposals, to use cavity-enhanced interaction with atomic 88Sr samples as a frequency reference for laser stabilization. Such systems can be realized using both passive and active approaches where either the atomic phase response is used as an error signal, or the narrow...... atomic transition itself is used as a source for a spectrally pure laser. Both approaches shows the promise of being able to compete with the current state of the art in stable lasers and have similar limitations on their ultimately achievable linewidths [1, 2]....

  6. Ultra-short pulse generation in a linear femtosecond fiber laser using a Faraday rotator mirror and semiconductor saturable absorber mirror (United States)

    Hekmat, M. J.; Gholami, A.; Omoomi, M.; Abdollahi, M.; Bagheri, A.; Normohammadi, H.; Kanani, M.; Ebrahimi, A.


    An innovative method for obtaining ultra-short and perfectly stable femtosecond pulses in a linear erbium-doped fiber laser is proposed. A commercial semiconductor saturable absorber mirror and a standard Faraday rotator are used in both sides of the linear fiber optic laser configuration to shorten the pulse duration and suppress undesirable effects on the polarization state. The laser operation is investigated theoretically using a physical model and it is verified using experimental results. The main idea of this research is to apply a Faraday rotator mirror for pulse shortening purposes. For this reason, two types of Er-doped fiber optics with different group velocity dispersion parameters are used to achieve the optimum net group velocity dispersion in the cavity. Output results demonstrate good consistency between theory and experimental results. The output power of the linear oscillator is approximately 45 mW with 135 fs pulses at the 23.5 MHz repetition rate without any pulse compression.

  7. Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications (United States)

    Parekh, Devang

    With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

  8. Tests and Analysis of Electromagnetic Models for Semiconductor-Metal Quantum-Well Lasers (United States)

    Shih, Meng-Mu


    This work tests the proposed electromagnetic models for quantum-well lasers by using several materials of semiconductors and metals. Different combinations of semiconductors and metals can generate various wavelengths and mode-couplings in such semiconductor waveguide structures with built-in metal-gratings. The numerical results of these models are computed by the photonic approach and verified by the optical approach. Even for the weak mode-coupling cases, the numerical results computed by both approaches have close values. Numerical results with post-analysis can summarize how the key parameters, such as grating geometry, well thickness, and layer thickness, affect the mode-couplings. The above results can be further interpreted by physics intuition and fundamental concepts so as to provide insights into the modeling and design of lasers for more applications.

  9. Dual-Cylinder Laser Reference Cavities for LISA Project (United States)

    National Aeronautics and Space Administration — "Summary: The Laser Interferometer Space Antenna (LISA) mission is under consideration by NASA and ESA as a joint mission to study gravitational wave signals from a...

  10. Control of ring lasers by means of coupled cavities

    DEFF Research Database (Denmark)

    Buchhave, Preben; Abitan, Haim; Tidemand-Lichtenberg, Peter


    Variable phase coupling to an external ring is used to control a unidirectional ring laser. The observed behavior of the coupled rings is explained theoretically. We have found experimentally that by quickly changing the phase of the feedback from the external ring it is possible to Q-switch the ......-switch the ring laser. Also, at certain values of the phase of the feedback in the external ring, instabilities in the total system occur and oscillations arise in the ring laser.......Variable phase coupling to an external ring is used to control a unidirectional ring laser. The observed behavior of the coupled rings is explained theoretically. We have found experimentally that by quickly changing the phase of the feedback from the external ring it is possible to Q...

  11. The Complex Way to Laser Diode Spectra: Example of an External Cavity Laser With Strong Optical Feedback

    DEFF Research Database (Denmark)

    Detoma, Enrico; Tromborg, Bjarne; Montrosset, Ivo


    An external cavity laser with strong grating-filtered feedback to an antireflection-coated facet is studied with a time-domain integral equation for the electric field, which reproduces the modes of the oscillation condition as steady-state solutions. For each mode, the stability and spectral...... to simulate the large signal time evolution after start from unstable modes....

  12. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao


    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  13. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.


    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  14. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus


    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  15. Study on biological effect on mice and use safety of 830 nm semiconductor laser

    International Nuclear Information System (INIS)

    Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang


    Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

  16. Efficient 525 nm laser generation in single or double resonant cavity (United States)

    Liu, Shilong; Han, Zhenhai; Liu, Shikai; Li, Yinhai; Zhou, Zhiyuan; Shi, Baosen


    This paper reports the results of a study into highly efficient sum frequency generation from 792 and 1556 nm wavelength light to 525 nm wavelength light using either a single or double resonant ring cavity based on a periodically poled potassium titanyl phosphate crystal (PPKTP). By optimizing the cavity's parameters, the maximum power achieved for the resultant 525 nm laser was 263 and 373 mW for the single and double resonant cavity, respectively. The corresponding quantum conversion efficiencies were 8 and 77% for converting 1556 nm photons to 525 nm photons with the single and double resonant cavity, respectively. The measured intra-cavity single pass conversion efficiency for both configurations was about 5%. The performances of the sum frequency generation in these two configurations was studied and compared in detail. This work will provide guidelines for optimizing the generation of sum frequency generated laser light for a variety of configurations. The high conversion efficiency achieved in this work will help pave the way for frequency up-conversion of non-classical quantum states, such as the squeezed vacuum and single photon states. The proposed green laser source will be used in our future experiments, which includes a plan to generate two-color entangled photon pairs and achieve the frequency down-conversion of single photons carrying orbital angular momentum.

  17. Frequency stabilization of multiple lasers on a single medium-finesse cavity (United States)

    Han, Chengyin; Zhou, Min; Gao, Qi; Li, Shangyan; Zhang, Shuang; Qiao, Hao; Ai, Di; Zhang, Mengya; Lou, Ge; Luo, Limeng; Xu, Xinye


    We present a simple, compact, and robust frequency stabilization system of three lasers operating at 649, 759, and 770 nm, respectively. These lasers are applied in experiments on ytterbium optical lattice clocks, for which each laser needs to have a linewidth of a few hundred or tens of kilohertz while maintaining a favorable long-term stability. Here, a single medium-finesse cavity is adopted as the frequency reference and the standard Pound-Drever-Hall technique is used to stabilize the laser frequencies. Based on the independent phase modulation, multiple-laser locking is demonstrated without mutual intervention. The locked lasers are measured to have a linewidth of 100 kHz and the residual frequency drift is about 78.5 Hz s-1. This kind of setup provides a construction that is much simpler than that in previous work.

  18. Grin-parabolic optical cavity characteristic study in AlGaAs-GaAs laser

    International Nuclear Information System (INIS)

    Martin A, J.A.; Diaz A, P.; Garcia R, F.


    In this paper we study theoretically the characteristics of a GaAs-AlGaAs laser transverse optical cavity with a parabolic graded variation of the refractive index (GRIN-SCH). We give an exact solution of the wave equation and analyze the near field distribution as well as the values of the effective refractive index of the fundamental mode. The condition for a mono mode optical cavity are also deduced. The behavior of the confinement factor and the far field in the plane perpendicular to the active region are reported. The results for the GRIN-SCH structure are compared with a similar SCH-straight laser transverse optical cavity. (Author) 11 refs

  19. Selection of a LGp0-shaped fundamental mode in a laser cavity: Phase versus amplitude masks

    CSIR Research Space (South Africa)

    Hasnaoui, A


    Full Text Available -plate (absorbing ring) set inside a diaphragmed laser cavity for selecting a pure LGp0 mode of radial order, p. We analyse, for each type of mask, the origin of the transverse mode selection, and contrary to what one might expect we find that it is not necessary...

  20. Self-injection locking of the DFB laser through an external ring fiber cavity: Polarization behavior

    Directory of Open Access Journals (Sweden)

    J.L. Bueno Escobedo


    Full Text Available We study stability of self-injection locking realized with DFB laser coupled with an external fiber optic ring cavity. Polarization behavior of the radiation circulating in the feedback loop is reported. Two regimes of mode hopping have been observed; one of them is accompanied by polarization bistability involving two orthogonal polarization states.

  1. Flight-Like Optical Reference Cavity for GRACE Follow-On Laser Frequency Stabilization (United States)

    Folkner, W. M.; deVine, G.; Klipstein, W. M.; McKenzie, K.; Spero, R.; Thompson, R.; Yu, N.; Stephens, M.; Leitch, J.; Pierce, R.; hide


    We describe a prototype optical cavity and associated optics that has been developed to provide a stable frequency reference for a future space-based laser ranging system. This instrument is being considered for inclusion as a technology demonstration on the recently announced GRACE follow-on mission, which will monitor variations in the Earth's gravity field.

  2. Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent


    We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

  3. Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity (United States)

    Liu, Bo; Braiman, Yehuda


    We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

  4. Waveguide and articulated arm for Er:YAG laser system: shape and depth of laser cavity in hard dental tissues (United States)

    Jelinkova, Helena; Dostalova, Tatjana; Miyagi, Mitsunobu; Wang, You; Shi, Yi-Wei; Dolezalova, Libuse; Hamal, Karel; Krejsa, Otakar; Kubelka, Jiri; Prochazka, Stanislav


    The aim of our study was to verify the efficiency of delivery systems for Er:YAG laser radiation which could be used in dentistry. The influence of increasing energy and number of pulses on a profile and depth of drilled holes was investigated. Er:YAG laser was operating in a free-running mode, generating a length of pulses 200 microsecond with a maximum energy of 500 mJ. The delivery systems investigated were an articulated arm and a fluorocarbon polymer-coated silver hollow glass waveguide. The prepared hard tissues were a sliced part of enamel, dentine and ivory. The laser radiation was directed on them by focusing optics (CaF2 lens) together with the cooling water to ensure that the tissues will not be burned. For the evaluation of shapes, depth and profiles of the prepared cavities the metallographic microscope, x-ray microtomograph and scanning electron microscope were used. From the results it was observed that the profile and depth of the cavities prepared by the laser radiation delivered by the various systems (waveguide or articulated arm) are not the same. The laser radiation delivered by waveguide produces a larger diameter cavity with a lower depth. The holes are smoother and without side effects.

  5. VUV free electron laser with a distributed feedback cavity

    Energy Technology Data Exchange (ETDEWEB)

    Chen, J.; Fujita, M.; Asakawa, M. [Osaka Univ. (Japan)] [and others


    Development of FEL to the VUV/x-ray regime is looked as one of the possible directions to its success. For eliminating the need for optical cavities, difficult to be built at that regime, we propose a VUV (50nm) SASE FEL. According to Pellegrini`s scaling law, for a 290MeV/200A e-beam passing through a 10.8m long and 2cm period wiggler, a high peak power 85.5MW and a high average brightness 2.44 X 10{sup +21} (photons/[mm{sup 2}.mrad{sup 2}.bw]) can be obtained. However, it requires {epsilon} n=2.3mm.mrad and {Delta}{gamma}/{gamma} = 0.15% about one order above the practical parameters we can realize. For enhancing the efficiency and decreasing the requirements on the e-beam quality and the wiggler length, we put forward a concept of VUV FEL with a distributed feedback cavity. In x-ray region, the natural periodicity of crystals provides strong Bragg coupling and it has been demonstrated as the parametric radiation. In vuv region, current intense research on superlattice can provide a periodical structure with a short period in 250 {Angstrom} order. High-performance vuv multilayer coatings on the inner-wall of the waveguide are used to guide the spontaneous emission and decrease the x-ray ohmic losses on the roundtrip passes. By this DFB cavity structure, it is expected to realize the lasing in a smaller size. Other practical methods such as the optical klystron for shortening the wiggler length and the tapper wiggler for enhancing the saturation power are also considered. The analytical considerations are based on the 1-D FEL equations and 1-D perturbation theory of dielectric waveguide.

  6. Single-mode quantum cascade lasers employing a candy-cane shaped monolithic coupled cavity (United States)

    Liu, Peter Q.; Sladek, Kamil; Wang, Xiaojun; Fan, Jen-Yu; Gmachl, Claire F.


    We demonstrate single-mode quantum cascade lasers emitting at ˜4.5 μm by employing a monolithic "candy-cane" shaped coupled-cavity consisting of a straight section connecting at one end to a spiral section. The fabrication process is identical to those for simple Fabry-Perot-type ridge lasers. Continuously tunable single-mode emission across ˜8 cm-1 with side mode suppression ratio up to ˜25 dB and a single-mode operating current range of more than 70% above the threshold current is achieved when the lasers are operated in pulsed-mode from 80 K to 155 K.

  7. High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers. (United States)

    Chen, Songtao; Zhang, Cheng; Lee, Joonhee; Han, Jung; Nurmikko, Arto


    A vertical-cavity surface-emitting perovskite laser is achieved using a microcavity configuration where CH 3 NH 3 PbI 3 thin solid films are embedded within a custom GaN-based high-quality (Q-factor) resonator. This single-mode perovskite laser reaches a low threshold (≈7.6 µJ cm -2 ) at room temperature and emits spatially coherent Gaussian laser beams. The devices allow direct access to the study of perovskite gain dynamics and material robustness. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers (United States)

    Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.


    The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

  9. Laser beam shaping optical system design methods and their application in edge-emitting semiconductor laser-based LIDAR systems (United States)

    Serkan, Mert

    LIDAR (Light Detection And Ranging) systems are employed for numerous applications such as remote sensing, military applications, optical data storage, display technology, and material processing. Furthermore, they are superior to other active remote sensing tools such as RADAR systems, considering their higher accuracy and more precise resolution due to their much shorter wavelengths and narrower beamwidth. Several types of lasers can be utilized as the radiation source of several LIDAR systems. Semiconductor laser-based LIDAR systems have several advantages such as low cost, compactness, broad range of wavelengths, and high PRFs (Pulse Repetition Frequency). However, semiconductor lasers have different origins and angles of divergence in the two transverse directions, resulting in the inherent astigmatism and elliptical beam shape. Specifically, elliptical beam shape is not desirable for several laser-based applications including LIDAR systems specifically designed to operate in the far-field region. In this dissertation, two mirror-based and two lens-based beam shapers are designed to circularize, collimate, and expand an edge-emitting semiconductor laser beam to a desired beam diameter for possible application in LIDAR systems. Additionally, most laser beams including semiconductor laser beams have Gaussian irradiance distribution. For applications that require uniform illumination of an extended target area, Gaussian irradiance distribution is undesirable. Therefore, a specific beam shaper is designed to transform the irradiance distribution from Gaussian to uniform in addition to circularizing, collimating, and expanding the semiconductor laser beam. For the design of beam shapers, aperture sizes of the surfaces are preset for desired power transmission and allowed diffraction level, surface parameters of the optical components and the distances between these surfaces are determined. Design equations specific to these beam shaping optical systems are

  10. A High Reliability Frequency Stabilized Semiconductor Laser Source Project (United States)

    National Aeronautics and Space Administration — NASA needs high stability laser source of 1W output power for Lidar applications. Princeton Optronics has developed ultra-stable, narrow linewidth diode pumped solid...

  11. Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I (United States)

    National Aeronautics and Space Administration — This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered ....

  12. Application of laser spot cutting on spring contact probe for semiconductor package inspection (United States)

    Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan


    A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

  13. Delay differential equations for mode-locked semiconductor lasers. (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory


    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  14. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate (United States)

    Mazur, Eric [Concord, MA; Shen, Mengyan [Arlington, MA


    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  15. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate (United States)

    Mazur, Eric; Shen, Mengyan


    The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  16. Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905 nm) asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S O; Podoskin, A A; Pikhtin, N A; Tarasov, I S


    Experimental static and dynamic electro-optical characteristics of 905 nm high power mesa-stripe semiconductor laser diodes based on an AlGaAs/GaAs asymmetric heterostructure operating under Fabry–Perot cavity mode quenching have been investigated. We have shown that Fabry–Perot cavity mode reversible turn-off is due to the fulfillment of a high-Q closed mode threshold condition. The mode is propagating along both gain and passive areas of the laser diode and characterized by nearly zero output optical losses. We have demonstrated that fundamental reasons of closed mode threshold condition fulfillment are (i) gain spectra shift in the long wavelength region due to band gap shrinkage and thermal heating effects and (ii) the band gap absorption decrease in the passive area. It has been shown that the process of closed mode turn-on consists of two stages. In the first stage, Fabry–Perot cavity modes and closed modes are lasing simultaneously under high residual band gap absorption in the passive area. In the second stage, closed mode optical losses become lower than Fabry–Perot cavity mode optical losses due to a positive feedback between the residual absorption and closed mode photon stimulated generation rate. This results in an accumulation of photogenerated carriers in the quantum well active region of the laser diode passive area. As a result, the threshold concentration in the gain area decreases providing lasing emission switching from the Fabry–Perot cavity mode to the closed mode. (paper)

  17. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.


    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  18. Active mode control of solid state laser using an intra-cavity beam shaper (United States)

    Liu, Wenguang; Zhou, Qiong; Yan, Baozhu; Jiang, Zongfu


    In high power solid state lasers, thermal lens effect always give rise to the multi-modes oscillation in the resonator. The beam quality will deteriorate with the increase of output power. In this paper, an intra-cavity beam shaper is introduced to actively compensate the thermal lens in the laser resonator. One round trip ABCD matrix of the resonator with an intra-cavity beam shaper and thermal lens is calculated. The design parameters with wide stable zone are concluded through the ABCD matrix. The mode size and stability diagram of the resonator are calculated under different focal length of the thermal lens. The relationship between the adjustment of the intra-cavity beam shaper and the mode size under different thermal lenses are concluded, and general method to actively control the modes contents by adjusting the intra-cavity beam shaper is introduced. The effectiveness and performance of active mode control with the intra-cavity beam shaper are verified by simulations of the output modes of resonators. It shows that the M2 factor is well maintained below 1.6 even the focal length of the thermal lens changes from 5m to 0.5m.

  19. Doppler wind lidar using a MOPA semiconductor laser at stable single-frequency operation

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    A compact master-oscillator power-amplifier semiconductor laser (MOPA-SL) is a good candidate for a coherent light source (operating at 1550 nm) in a Doppler wind Lidar. The MOPA-SL requires two injection currents: Idfb for the distributed-feedback (DFB) laser section (master oscillator) and Iamp...... for the tapered amplifier section. The specified maximum current values are 0.7 A and 4.0 A for Idfb and Iamp. Although the MOPA-SL has been proven capable of producing single-frequency CW output beam, stable operation at this spectral condition has also been known to highly depend on the drive currents...... to the laser. This was done by observing the spectral characteristic of the laser using an optical spectrum at different drive current combinations. When using the laser for a Doppler wind Lidar application, a combination of (Idfb, Iamp) which is close to the center of an identified stable single...

  20. A digital frequency stabilization system of external cavity diode laser based on LabVIEW FPGA (United States)

    Liu, Zhuohuan; Hu, Zhaohui; Qi, Lu; Wang, Tao


    Frequency stabilization for external cavity diode laser has played an important role in physics research. Many laser frequency locking solutions have been proposed by researchers. Traditionally, the locking process was accomplished by analog system, which has fast feedback control response speed. However, analog system is susceptible to the effects of environment. In order to improve the automation level and reliability of the frequency stabilization system, we take a grating-feedback external cavity diode laser as the laser source and set up a digital frequency stabilization system based on National Instrument's FPGA (NI FPGA). The system consists of a saturated absorption frequency stabilization of beam path, a differential photoelectric detector, a NI FPGA board and a host computer. Many functions, such as piezoelectric transducer (PZT) sweeping, atomic saturation absorption signal acquisition, signal peak identification, error signal obtaining and laser PZT voltage feedback controlling, are totally completed by LabVIEW FPGA program. Compared with the analog system, the system built by the logic gate circuits, performs stable and reliable. User interface programmed by LabVIEW is friendly. Besides, benefited from the characteristics of reconfiguration, the LabVIEW program is good at transplanting in other NI FPGA boards. Most of all, the system periodically checks the error signal. Once the abnormal error signal is detected, FPGA will restart frequency stabilization process without manual control. Through detecting the fluctuation of error signal of the atomic saturation absorption spectrum line in the frequency locking state, we can infer that the laser frequency stability can reach 1MHz.

  1. Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT) (United States)


    image of AlSb /GaSb superlattices produced prior to laser growth. InxGa1xSb structures are also produced to calibrate in- dium composition in the quantum...HR-XRD H2H rocking curves of AlSb /GaSb superlattices along with calculated diffraction pattern, represent- ing faithful reproduction material

  2. Theory of Passively Mode-Locked Photonic Crystal Semiconductor Lasers

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper


    We report the first theoretical investigation of passive mode-locking in photonic crystal mode-locked lasers. Related work has investigated coupled-resonator-optical-waveguide structures in the regime of active mode-locking [Opt. Express 13, 4539-4553 (2005)]. An extensive numerical investigation...

  3. Alkali suppression within laser ion-source cavities and time structure of the laser ionized ion-bunches

    CERN Document Server

    Lettry, Jacques; Köster, U; Georg, U; Jonsson, O; Marzari, S; Fedosseev, V


    The chemical selectivity of the target and ion-source production system is an asset for Radioactive Ion-Beam (RIB) facilities equipped with mass separators. Ionization via laser induced multiple resonant steps Ionization has such selectivity. However, the selectivity of the ISOLDE Resonant Ionization Laser Ion-Source (RILIS), where ionization takes place within high temperature refractory metal cavities, suffers from unwanted surface ionization of low ionization potential alkalis. In order to reduce this type of isobaric contaminant, surface ionization within the target vessel was used. On-line measurements of the efficiency of this method is reported, suppression factors of alkalis up to an order of magnitude were measured as a function of their ionization potential. The time distribution of the ion bunches produced with the RILIS was measured for a variety of elements and high temperature cavity materials. While all ions are produced within a few nanoseconds, the ion bunch sometimes spreads over more than 1...

  4. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Podoskin, A. A., E-mail:; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)


    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  5. Successful development of innovative fabrication technique based on laser welding, for superconducting RF cavities - results and path ahead

    International Nuclear Information System (INIS)

    Khare, Prashant; Upadhyay, B.N.; Dwivedi, Jishnu


    Superconducting radio frequency (SCRF) cavities are the heart of any particle accelerator based on SCRF technology. All over the world, efforts are being made to develop a technique which can bring down the cost and time of fabrication of these cavities. The present day fabrication method of SCRF cavities uses Electron beam welding (EBW) technique. The cavities fabricated by this method turn out to be expensive and take long fabrication time. To overcome such difficulties related with EBW process, an innovative concept for fabrication of SCRF cavities based on laser welding was formulated at RRCAT. International patent application was immediately launched for this work, to protect intellectual property rights of DAE

  6. Hair removal using an 810 nm gallium aluminum arsenide semiconductor diode laser: A preliminary study. (United States)

    Williams, R M; Gladstone, H B; Moy, R L


    Laser hair removal is a popular treatment method for removing unwanted hair. Several laser systems are available for laser hair removal. The gallium aluminum arsenide semiconductor diode (GAASD) laser is one of the newer laser modalities to be studied. To evaluate the efficacy of the GAASD laser system in removing unwanted hair. Twenty-six patients with brown or black hair growth were treated with the GAASD laser at fluences of 20-80 J/cm2. Hair regrowth was measured 4 weeks after the first treatment, 4 weeks after the second treatment, 4 weeks after the third treatment, and 4 weeks, 8 weeks, and 8 months after the fourth treatment. GAASD laser treatment resulted in hair growth delay in all treated regions. Repeated laser treatments did not produce an increased number of vellus hairs. The percentage of hair reduction fluctuated between 5% and 13% with the second or third treatment averaging the highest percent reduction. In all cases, the percentage of hair reduction of the treatment sites evaluated at 8 months after the fourth treatment was less than both the second and third treatments (highest average percent reduction) and the fourth (last) treatment.

  7. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments (United States)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas


    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  8. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G


    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  9. Preparatory procedure and equipment for the European x-ray free electron laser cavity implementation

    Directory of Open Access Journals (Sweden)

    D. Reschke


    Full Text Available The European x-ray free electron laser is under construction at Deutsches Elektronen-Synchrotron (DESY. The electron beam energy of up to 17.5 GeV will be achieved by using superconducting accelerator technology. Final prototyping, industrialization, and new infrastructure are the actual challenges with respect to the accelerating cavities. This paper describes the preparation strategy optimized for the cavity preparation procedure in industry. For the industrial fabrication and preparation, several new hardware components have been already developed at DESY. The design and construction of a semiautomated rf-measurement machine for dumbbells and end groups are described. In a collaboration among FNAL, KEK, and DESY, an automatic cavity tuning machine has been designed and four machines are under construction. The functionality of these machines with special attention to safety aspects is described in this paper. A new high pressure rinsing system has been developed and is operational.

  10. Influence of Carrier Cooling on the Emission Dynamics of Semiconductor Microcavity Lasers (United States)

    Hilpert, M.; Hofmann, M.; Ellmers, C.; Oestreich, M.; Schneider, H. C.; Jahnke, F.; Koch, S. W.; Rühle, W. W.; Wolf, H. D.; Bernklau, D.; Riechert, H.


    We investigate the influence of carrier relaxation on the emission dynamics of a semiconductor microcavity laser. The structure is optically excited with energies of 1.477 down to 1.346 eV (resonant excitation). The stimulated emission dynamics clearly becomes faster for decreasing excitation energy and the influence of the light hole on the emission dynamics is demonstrated. Theoretical calculations reproduce the results only if the nonequilibrium carrier dynamics is treated on the basis of a microscopic model.

  11. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth


    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...... traveling-wave model. The dynamics of the low-frequency fluctuations are explained qualitatively in terms of bistability through an iterative description...

  12. Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors (United States)


    N. Rubido, J. Tiana-Alsina, M. C. Torrent , and C. Masoller, Distinguishing signatures of deter- minism and stochasticity in spiking complex systems...Cohen, A. Aragoneses, D. Rontani, M. C. Torrent , C. Masoller and D. J. Gauthier, Multidimensional subwavelength position sensing using a...semiconductor laser with optical feedback, Opt. Lett. 38, 4331 (2013). Download 10. A. Aragoneses, T. Sorrentino, S. Perrone, D. J. Gauthier, M. C. Torrent and C

  13. Theoretical description of spontaneous pulse formation in a semiconductor microring laser

    International Nuclear Information System (INIS)

    Gil, L.; Columbo, L.


    We theoretically describe the spontaneous formation of stable pulses in a GaAs bulk semiconductor microring laser. These pulses are obtained without active or passive mode locking. We show that the parameter regime associated with their existence is limited on one side by the phase instability of the continuous-wave solution, and on the other side by the failure of Lamb's mode-locking criterion. Bistability between the continuous-wave solution and the spontaneous pulses is observed.

  14. Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Tidemand-Lichtenberg, Peter


    Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM00 power of 800 mW with 65% slope...

  15. Modelling laser-induced phase transformations in semiconductors

    Czech Academy of Sciences Publication Activity Database

    Gatskevich, E.; Přikryl, Petr; Ivlev, G.


    Roč. 76, č. 1 (2007), s. 65-72 ISSN 0378-4754. [MODELLING 2005. Plzeň, 04.07.2005-08.07.2005] R&D Projects: GA ČR GA201/04/1503 Institutional research plan: CEZ:AV0Z10190503 Keywords : laser-induced phase transitions * moving boundary problem * non-equilibrium phase changer Subject RIV: BA - General Mathematics Impact factor: 0.738, year: 2007

  16. Transverse mode tailoring in diode lasers based on coupled large optical cavities (United States)

    Gordeev, N. Yu; Maximov, M. V.; E Zhukov, A.


    The key principles of transverse mode engineering in edge-emitting lasers with broadened waveguides based on coupled large optical cavity (CLOC) structures are presented. The CLOC laser design is shown to be an effective approach for reducing the optical loss, broadening the waveguide, and lowering the beam divergence. Having simulated the sensitivity of the CLOC design to variations in layer thicknesses and compositions we have shown its high robustness. Advanced versions of the CLOC laser structures having two extra passive waveguides have been treated and shown to effectively eliminate several transverse modes. We have considered an application of the CLOC concept for waveguides with shifted active regions aimed at reducing laser thermal and electric resistances.

  17. Laser Oscillator Incorporating a Wedged Polarization Rotator and a Porro Prism as Cavity Mirror (United States)

    Li, Steven


    A laser cavity was designed and implemented by using a wedged polarization rotator and a Porro prism in order to reduce the parts count, and to improve the laser reliability. In this invention, a z-cut quartz polarization rotator is used to compensate the wavelength retardance introduced by the Porro prism. The polarization rotator rotates the polarization of the linear polarized beam with a designed angle that is independent of the orientation of the rotator. This unique property was used to combine the retardance compensation and a Risley prism to a single optical component: a wedged polarization rotator. This greatly simplifies the laser alignment procedure and reduces the number of the laser optical components.

  18. Operational characteristics of dual gain single cavity Nd: YVO

    Indian Academy of Sciences (India)

    Operational characteristics of a dual gain single cavity Nd:YVO4 laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be ...

  19. Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space. (United States)

    Luvsandamdin, Erdenetsetseg; Kürbis, Christian; Schiemangk, Max; Sahm, Alexander; Wicht, Andreas; Peters, Achim; Erbert, Götz; Tränkle, Günther


    We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the potassium D2-line at 766.7 nm and provides 27.5 GHz of continuous tunability. It features sub-100 kHz short term (100 μs) emission linewidth. To qualify the extended cavity diode laser module for quantum optics experiments in space, vibration tests (8.1 g(RMS) and 21.4 g(RMS)) and mechanical shock tests (1500 g) were carried out. No degradation of the electro-optical performance was observed.

  20. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira


    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  1. Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers (United States)

    Junges, Leandro; Gallas, Jason A. C.


    The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang-Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay -time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail.

  2. Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser. (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy


    We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

  3. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors. (United States)

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A


    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Passive mode locking in a multisegment laser diode with an external cavity

    International Nuclear Information System (INIS)

    Andreeva, E V; Magnitskiy, Sergey A; Koroteev, Nikolai I; Salik, E; Feinberg, J; Starodubov, D S; Shramenko, M V; Yakubovich, S D


    The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 - 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics. (lasers)

  5. Edge-emitting lasers based on coupled large optical cavity with high beam stability (United States)

    Serin, A.; Gordeev, N.; Payusov, A.; Shernyakov, Y.; Kalyuzhnyy, y.; Mintairov, S.; Maximov, M.


    In this paper we present a study on temperature and current stability of far-field patterns of lasers based on the coupled large optical cavity (CLOC) concept. Previously it has been shown that the CLOC structures allows effective suppressing of high-order mode lasing in broadened waveguides. For the first time we report on transverse single-mode emission from the CLOC lasers with 4.8 μm thick waveguide. Using broadened waveguide allowed us to reduce the divergence of the far-field patterns down to 14° in continuous-wave (CW) regime. Far-field patterns proved to be insensitive to current and temperature changes.

  6. Stability of a laser cavity with non-parabolic phase transformation elements

    CSIR Research Space (South Africa)

    Litvin, IA


    Full Text Available aberration in high–power transversally pumped laser rods,” Opt. Commun. 259(1), 223–235 (2006). 14. A. G. Fox and T. Li, “Resonant Modes in a Maser Interferometer,” Bell Syst. Tech. J. 40, 453–488 (1961). 15. O. Svelto, Principles of Lasers, 3rd edition.... Consequently the intra-cavity implementation of any non-conventional phase transformation elements or taking into account the thermal lensing which in general has a non-parabolic phase transformation [13], leads to a solution of the complicated Fox...

  7. Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak


    of the mode selection properties of the new structure is rigorously analyzed and compared to other structures reported in the literature. The possibility of engineering the emission shape while retaining strong single mode operation is highly desirable for low-cost mid-range optical interconnects applications......A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

  8. Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavity

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte


    . By adapting a bar geometry, the output power could be scaled even up to several tens of watts. Unfortunately, the high divergence which is a characteristic feature of the bar geometry could lead to a degradation of the overall beam quality of the laser bar. However, spectral beam combining is an effective...... solution for preserving the beam quality of the bar in the range of that of a single emitter and at the same time, enabling the power scaling. We report spectral beam combining applied to a 12 emitter tapered laser bar at 980 nm. The external cavity has been designed for a wavelength separation of 4.0 nm...

  9. Frequency and time domain analysis of an external cavity laser with strong filtered optical feedback

    DEFF Research Database (Denmark)

    Detoma, Enrico; Tromborg, Bjarne; Montrosset, Ivo

    The stability properties of an external cavity laser with strong grating-filtered optical feedback to an anti-reflection coated facet are studied with a general frequency domain model. The model takes into account non-linear effects like four wave mixing and gain compression. A small......-signal analysis in the frequency domain allows a calculation of the range of operation without mode hopping around the grating reflectivity peak. This region should be as large as possible for proper operation of the tunable laser source. The analysis shows this stabilizing effect of mode coupling and gain...

  10. Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent


    We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form......-factor, mechanical stability and low cost when combined with a monolithically integrated photodiode detector....

  11. Numerical study of base effects on population inversion in DF chemical laser cavity

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jun Sung; Baek, Seung Wook [Korea Advanced Institute of Science and Technology, Daejeon (Korea). Division of Aerospace Engineering, Department of Mechanical Engineering


    Nowadays a chemical laser is globally studied and examined as a means of new high strategic weapon system or industrial equipment system. Different from the other laser systems, the chemical laser system has a great advantage in that a high power laser beam with megawatt range can be easily generated. In order to do that, the chemical laser system employs a supersonic mixing and chemical reaction in the cavity. In the DF chemical laser system, F atom as an oxidant and D{sub 2} molecule as a fuel are injected and reacted so that the DF excited molecules are produced. These phenomena occur in a non-equilibrium state. The excited molecules are degenerated into the lower level energy states so as to generate the laser beam by means of the stimulated emission. Therefore, more excited molecules in higher energy level are desirable in order to generate a higher power laser beam by controlling a flow mixing and chemical reaction in the cavity. There are a lot of factors that may affect mixing and chemical reaction in producing excited molecules. Usually, the chemical laser system adopts a diffusion type of injection system with base. Thereby, a recirculation zone is formed behind the base which determines characteristics of mixing and chemical reaction. In this study, the effects of base height on the population inversion, that is one of the most important aspects in the chemical laser system, are numerically investigated. The results are discussed by considering three base heights of 0.4, 0.8 and 1.6mm. Major results reveal that a transition of DF(1)-DF(0) as one of population inversions takes place in the whole range of cavity while its value decreases as the base height increases. On the contrary, the region over which the transitions of DF(2)-DF(1) and DF(3)-DF(2) occur, increases as the base height increases, while so does its value. Therefore, as the base height decreases, the maximum small signal gain (SSG) becomes higher in the v{sub 1-0} transition, whereas it

  12. Improvements to tapered semiconductor MOPA laser design and testing (United States)

    Beil, James A.; Shimomoto, Lisa; Swertfeger, Rebecca B.; Misak, Stephen M.; Campbell, Jenna; Thomas, Jeremy; Renner, Daniel; Mashanovitch, Milan; Leisher, Paul O.; Liptak, Richard W.


    This paper expands on previous work in the field of high power tapered semiconductor amplifiers and integrated master oscillator power amplifier (MOPA) devices. The devices are designed for watt-class power output and single-mode operation for free-space optical communication. This paper reports on improvements to the fabrication of these devices resulting in doubled electrical-to-optical efficiency, improved thermal properties, and improved spectral properties. A newly manufactured device yielded a peak power output of 375 mW continuous-wave (CW) at 3000 mA of current to the power amplifier and 300 mA of current to the master oscillator. This device had a peak power conversion efficiency of 11.6% at 15° C, compared to the previous device, which yielded a peak power conversion efficiency of only 5.0% at 15° C. The new device also exhibited excellent thermal and spectral properties, with minimal redshift up to 3 A CW on the power amplifier. The new device shows great improvement upon the excessive self-heating and resultant redshift of the previous device. Such spectral improvements are desirable for free-space optical communications, as variation in wavelength can degrade signal quality depending on the detectors being used and the medium of propagation.

  13. Spontaneous exchange of leader-laggard relationship in mutually coupled synchronized semiconductor lasers. (United States)

    Kanno, Kazutaka; Hida, Takuya; Uchida, Atsushi; Bunsen, Masatoshi


    We investigate the instantaneous behavior of synchronized temporal wave forms in two mutually coupled semiconductor lasers numerically and experimentally. The temporal wave forms of two lasers are synchronized with a propagation delay time, with one laser oscillating in advance of the other, known as the leader-laggard relationship. The leader-laggard relationship can be determined by measuring the cross-correlation between the two temporal wave forms with the propagation delay time. The leader can be identified when the optical carrier frequency of the leader laser is higher than that of the other laser. However, spontaneous exchange between the leader and laggard lasers can be observed in low-frequency fluctuations by short-term cross-correlation measurements, even for a fixed initial optical frequency detuning. The spontaneous exchange of the leader-laggard relationship originates from alternation of partial optical frequency locking between the two lasers. This observation is analyzed using a phase space trajectory on steady-state solutions for mutually coupled lasers with optical frequency detuning.

  14. Subpicometer Length Measurement Using Semiconductor Laser Tracking Frequency Gauge (United States)

    Thapa, Rajesh; Phillips, James D.; Rocco, Emanuele; Reasenburg, Robert D.


    We have demonstrated heretofore unattained distance precision of 0:14pm (2pm) incremental and 14nm (2.9 micrometers) absolute in a resonant (nonresonant) interferometer at an averaging time of 1 s, using inexpensive telecommunications diode lasers. We have controlled the main source of error, that due to spurious reflection and the resulting amplitude modulation. In the resonant interferometer, absolute distance precision is well under lambda/6. Therefore, after an interruption, an absolute distance measurement can be used to return to the same interferometer order.

  15. IV-VI mid-IR tunable lasers and detectors with external resonant cavities (United States)

    Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.; Blunier, S.; Dual, J.


    Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and spectroscopy. Such devices may be realized using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Vertical external cavity surface emitting lasers (VECSEL) may be applied for gas spectroscopy. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolor IR-FPA or IR-AFPA (IR-adaptive focal plane arrays). We review mid-infrared RCEDs and VECSELs using narrow gap IV-VI (lead chalcogenide) materials like PbTe and PbSe as the active medium. IV-VIs are fault tolerant and allow easy wavelength tuning. The VECSELs operate up to above room temperature and emit in the 4 - 5 μm range with a PbSe active layer. RCEDs with PbTe absorbing layers above 200 K operating temperature have higher sensitivities than the theoretical limit for a similar broad-band detector coupled with a passive tunable band-filter.

  16. Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities (United States)

    Avrutin, Eugene A.; Ryvkin, Boris S.; Payusov, Alexey S.; Serin, Artem A.; Gordeev, Nikita Yu


    It is shown that in high-power, large optical cavity laser diodes at high injection currents, the optical losses due to nonuniform carrier accumulation in the optical confinement layer can ensure the laser operation in the fundamental transverse mode. An experimental demonstration of switching from second order mode to fundamental mode in large optical cavity lasers with current and/or temperature increase is reported and explained, with the calculated values for the switching current and temperature in good agreement with the measurements. The results experimentally prove the nonuniform nature of carrier accumulation in the confinement layer and may aid laser design for optimizing the output.

  17. Whispering-gallery-mode laser-based noise-immune cavity-enhanced optical heterodyne molecular spectrometry. (United States)

    Zhao, Gang; Hausmaninger, Thomas; Ma, Weiguang; Axner, Ove


    The whispering-gallery-mode (WGM) laser is a type of laser that has an exceptionally narrow linewidth. Noise-immune cavity-enhanced optical heterodyne molecular spectrometry, which is a detection technique with extraordinary properties that benefit from narrow linewidth lasers, has been realized with a WGM laser. By locking to a cavity with a finesse of 55 000, acetylene and carbon dioxide could be simultaneously detected down to an unprecedented noise equivalent absorption per unit length of 6.6×10 -14   cm -1 over 150 s, corresponding to 5 ppt of C 2 H 2 .

  18. Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector. (United States)

    Lee, Seung-Min; Gong, Su-Hyun; Kang, Jin-Ho; Ebaid, Mohamed; Ryu, Sang-Wan; Cho, Yong-Hoon


    Laser operation of a GaN vertical cavity surface emitting laser (VCSEL) is demonstrated under optical pumping with a nanoporous distributed Bragg reflector (DBR). High reflectivity, approaching 100%, is obtained due to the high index-contrast of the nanoporous DBR. The VCSEL system exhibits low threshold power density due to the formation of high Q-factor cavity, which shows the potential of nanoporous medium for optical devices.

  19. Dual-wavelength external cavity laser device for fluorescence suppression in Raman spectroscopy (United States)

    Zhang, Xuting; Cai, Zhijian; Wu, Jianhong


    Raman spectroscopy has been widely used in the detection of drugs, pesticides, explosives, food additives and environmental pollutants, for its characteristics of fast measurement, easy sample preparation, and molecular structure analyzing capability. However, fluorescence disturbance brings a big trouble to these applications, with strong fluorescence background covering up the weak Raman signals. Recently shifted excitation Raman difference spectroscopy (SERDS) not only can completely remove the fluorescence background, but also can be easily integrated into portable Raman spectrometers. Usually, SERDS uses two lasers with small wavelength gap to excite the sample, then acquires two spectra, and subtracts one to the other to get the difference spectrum, where the fluorescence background will be rejected. So, one key aspects of successfully applying SERDS method is to obtain a dual-wavelength laser source. In this paper, a dual-wavelength laser device design based on the principles of external cavity diode laser (ECDL) is proposed, which is low-cost and compact. In addition, it has good mechanical stability because of no moving parts. These features make it an ideal laser source for SERDS technique. The experiment results showed that the device can emit narrow-spectral-width lasers of two wavelengths, with the gap smaller than 2 nanometers. The laser power corresponding to each wavelength can be up to 100mW.

  20. The effect of Er, Cr:YSGG laser irradiation on the apical leakage of retrograde cavity (United States)

    Asnaashari, Mohammad; Fekrazad, Reza; Dehghan Menshadi, Fatemeh; Seifi, Massoud


    INTRODUCTION: Controversial results have been reported when organic acids, ultrasonic instruments and laser techniques were used to remove smear layer in endodontic treatments. The aim of this study was to evaluate the effect of removing debris and smear layer by Er,Cr:YSGG laser irradiation on the apical leakage of retrograde cavities. MATERIALS AND METHODS: In this ex vivo study, 24 extracted mandibular single-rooted teeth were selected and instrumented up to K-file size #35. Approximately 3 mm of root apices were dissected perpendicular to the root’s long axis. Retrograde cavities with 3 mm depth were prepared and the teeth were randomly assigned to two groups. In one group, the retrograde cavities were filled with amalgam and in the other group, the dentinal surface of the retrograde cavities were lased with Er,Cr:YSGG laser (2W, 15 seconds, G4 tip). The cavities were filled with amalgam; all tooth surfaces except for dissected outsides were covered with blue wax. Then the teeth were immersed in 2% methylene blue dye for 48 hours. The amount of dye penetration into sagittal sections was measured by stereomicroscope at ×20 magnification by two independent observers who were blinded to the experiment. Data were statistically analyzed using student t-test. RESULTS: This study demonstrated that dye penetration was 0.8 mm (±0.53) in the lased and 0.97 mm (±0.54) in the non-lased group. It showed that, Er,Cr:YSGG laser can remove the debris and smear layer and consequently reduces the amount of dye penetration, although, the difference between the two groups was not statistically significant. CONCLUSION: This study showed that dye penetration was less in lased group because of the better seal of the dissected surface due to the better removal of the debris and smear layer by laser; further investigations are recommended in this field. [Iranian Endodontic Journal 2009;4(4):144-8] PMID:24019836

  1. An external-cavity quantum cascade laser operating near 5.2 µm combined with cavity ring-down spectroscopy for multi-component chemical sensing (United States)

    Dutta Banik, Gourab; Maity, Abhijit; Som, Suman; Pal, Mithun; Pradhan, Manik


    We report on the performance of a widely tunable continuous wave mode-hop-free external-cavity quantum cascade laser operating at λ ~ 5.2 µm combined with cavity ring-down spectroscopy (CRDS) technique for high-resolution molecular spectroscopy. The CRDS system has been utilized for simultaneous and molecule-specific detection of several environmentally and bio-medically important trace molecular species such as nitric oxide, nitrous oxide, carbonyl sulphide and acetylene (C2H2) at ultra-low concentrations by probing numerous rotationally resolved ro-vibrational transitions in the mid-IR spectral region within a relatively small spectral range of ~0.035 cm-1. This continuous wave external-cavity quantum cascade laser-based multi-component CRDS sensor with high sensitivity and molecular specificity promises applications in environmental sensing as well as non-invasive medical diagnosis through human breath analysis.

  2. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.


    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  3. External cavity quantum cascade lasers with ultra rapid acousto-optic tuning

    Energy Technology Data Exchange (ETDEWEB)

    Lyakh, A., E-mail:; Barron-Jimenez, R.; Dunayevskiy, I.; Go, R.; Patel, C. Kumar N., E-mail: [Pranalytica, Inc., 1101 Colorado Ave., Santa Monica, California 90401 (United States)


    We report operation of tunable external cavity quantum cascade lasers with emission wavelength controlled by an acousto-optic modulator (AOM). A long-wave infrared quantum cascade laser wavelength tuned from ∼8.5 μm to ∼9.8 μm when the AOM frequency was changed from ∼41MHz to ∼49 MHz. The laser delivered over 350 mW of average power at the center of the tuning curve in a linewidth of ∼4.7 cm{sup −1}. Measured wavelength switching time between any two wavelengths within the tuning range of the QCL was less than 1 μs. Spectral measurements of infrared absorption features of Freon demonstrated a capability of obtaining complete spectral data in less than 20 μs.

  4. Deformable mirrors for intra-cavity use in high-power thin-disk lasers. (United States)

    Piehler, Stefan; Dietrich, Tom; Wittmüss, Philipp; Sawodny, Oliver; Ahmed, Marwan Abdou; Graf, Thomas


    We present deformable mirrors for the intra-cavity use in high-power thin-disk laser resonators. The refractive power of these mirrors is continuously adaptable from -0.7 m-1 to 0.3 m-1, corresponding to radii of curvature ranging between 2.86 m (convex) and 6.67 m (concave). The optimized shape of the mirror membrane enables a very low peak-to-valley deviation from a paraboloid deformation over a large area. With the optical performance of our mirrors being equal to that of standard HR mirrors, we were able to demonstrate the tuning of the beam quality of a thin-disk laser in a range of M2 = 3 to M2 = 1 during laser operation at output powers as high as 1.1 kW.

  5. Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations. (United States)

    Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong


    We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

  6. VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

    CERN Document Server


    The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

  7. Compensating microphonics in SRF cavities to ensure beam stability for future free electron lasers

    Energy Technology Data Exchange (ETDEWEB)

    Neumann, Axel


    In seeded High-Gain-Harmonic-Generation free electron lasers or energy recovery linear accelerators the requirements for the bunch-to-bunch timing and energy jitter of the beam are in the femtosecond and per mill regime. This implies the ability to control the cavity radiofrequency (RF) field to an accuracy of 0.02 in phase and up to 1.10{sup -4} in amplitude. For the planned BESSY-FEL it is envisaged to operate 144 superconducting 1.3 GHz cavities of the 2.3 GeV driver linac in continuous wave mode and at a low beam current. The cavity resonance comprises a very narrow bandwidth of the order of tens of Hertz. Such cavities have been characterized under accelerator like conditions in the HoBiCaT test facility. It was possible to measure the error sources affecting the field stability in continuous wave (CW) operation. Microphonics, the main error source for a mechanical detuning of the cavities, lead to an average fluctuation of the cavity resonance of 1-5 Hz rms. Furthermore, the static and dynamic Lorentz force detuning and the helium pressure dependance of the cavity resonance have been measured. Single cavity RF control and linac bunch-to-bunch longitudinal phase space modeling containing the measured properties showed, that it is advisable to find means to minimize the microphonics detuning by mechanical tuning. Thus, several fast tuning systems have been tested for CW operation. These tuners consist of a motor driven lever for slow and coarse tuning and a piezo that is integrated into the tuner support for fast and fine tuning. Regarding the analysis of the detuning spectrum an adaptive feedforward method based on the least-mean-square filter algorithm has been developed for fast cavity tuning. A detuning compensation between a factor of two and up to a factor of seven has been achieved. Modeling the complete system including the fast tuning scheme, showed that the requirements of the BESSY-FEL are attainable. (orig.)

  8. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar


    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  9. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.


    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  10. Successful development of world's first laser welded SCRF cavity at RRCAT technique and advantages

    International Nuclear Information System (INIS)

    Khare, Prashant A.; Upadhyay, Brahmanand; Ghosh, Rupul


    A novel technique to fabricate Superconducting Radio Frequency (SCRF) cavities with the help of laser welding process without using vacuum environment has been developed for the first time in the world, at RRCAT , Indore, Department of Atomic Energy. The first cavity was fabricated and tested to give an accelerating gradient of 31.6 MV/m with quality factor of 1 x 1010 at 2K. This performance matches with internationally accepted performance levels expected from a well fabricated SCRF cavity. This technique has advantages like 25 times lower capital cost and very significantly lower operating cost.The paper describes the technique and advantages associated with this technique. In this technique, a pulsed Nd:YAG laser was used and high purity argon environment (less than 3 ppm), is maintained during welding. A multi-cell (5-cell), 1.3 GHz SCRF cavity has now been fabricated using this technique. This is the first multi-cell cavity which has been fabricated completely by laser welding technique at RRCAT. The advantages of this fabrication technique are numerous, such as, reduced fabrication cost, small Heat affected zone (HAZ), no necessity of high vacuum etc. and hence is highly suitable for large scale production of cavities. This paper also describes the technique, method of fabrication and experience in fabrication of multi-cell cavity by laser welding route. (author)

  11. Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms (United States)

    Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo


    Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

  12. Stable and High OSNR Compound Linear-Cavity Single-Longitudinal-Mode Erbium-Doped Silica Fiber Laser Based on an Asymmetric Four-Cavity Structure

    International Nuclear Information System (INIS)

    Feng Ting; Yan Feng-Ping; Li Qi; Peng Wan-Jing; Feng Su-Chun; Wen Xiao-Dong; Tan Si-Yu; Liu Peng


    We propose a stable and high optical signal-to-noise ratio (OSNR) compound linear-cavity single-longitudinal-mode (SLM) erbium-doped silica fiber laser. It consists of three uniform fiber Bragg gratings (FBGs) and two fiber couplers to form a simple asymmetric four-cavity structure to select the longitudinal mode. The stable SLM operation at the wavelength of 1544.053 nm with a 3 dB bandwidth of 0.014 nm and an OSNR of ∼60 dB was verified experimentally. Under laboratory conditions, a power fluctuation performance of less than 0.05 dB for 5 h and wavelength variation of less than 0.01 nm for about 150 min is demonstrated. Finally, the characteristic of laser output power as a function of pump power is investigated. The proposed system provides a simple and cost-effective approach to realize a stable SLM fiber laser

  13. THz cavities and injectors for compact electron acceleration using laser-driven THz sources

    Directory of Open Access Journals (Sweden)

    Moein Fakhari


    Full Text Available We present a design methodology for developing ultrasmall electron injectors and accelerators based on cascaded cavities excited by short multicycle THz pulses obtained from laser-driven THz generation schemes. Based on the developed concept for optimal coupling of the THz pulse, a THz electron injector and two accelerating stages are designed. The designed electron gun consists of a four cell cavity operating at 300 GHz and a door-knob waveguide to coaxial coupler. Moreover, special designs are proposed to mitigate the problem of thermal heat flow and induced mechanical stress to achieve a stable device. We demonstrated a gun based on cascaded cavities that is powered by only 1.1 mJ of THz energy in 300 cycles to accelerate electron bunches up to 250 keV. An additional two linac sections can be added with five and four cell cavities both operating at 300 GHz boosting the bunch energy up to 1.2 MeV using a 4-mJ THz pulse.

  14. Generation of 15 nJ pulses from a highly efficient, low-cost multipass-cavity Cr3+:LiCAF laser. (United States)

    Demirbas, Umit; Sennaroglu, Alphan; Kärtner, Franz X; Fujimoto, James G


    We describe the generation of enhanced pulse energies using a multipass-cavity (MPC) Cr(3)+:LiCAF laser, pumped by inexpensive, single spatial mode laser diodes. A semiconductor saturable absorber was used for stable mode-locked operation. The MPC reduced the pulse repetition rate to the approximately 10 MHz level, scaling pulse energies and intensities. With only 540 mW of absorbed pump power, 98 fs pulses with energies of 9.9 nJ and peak powers of approximately 101 kW, corresponding to 95 mW of average power at a repetition rate of 9.58 MHz, were generated. By increasing the intracavity negative dispersion, 310 fs pulses with energies of 15.2 nJ and peak powers of approximately 49 kW, corresponding to 160 mW of average power at 10.51 MHz repletion rate, were also generated. These results demonstrate that low-cost MPC Cr(3+)-doped colquiriite lasers can generate pulse energies and intensities comparable to more expensive Ti:sapphire lasers.

  15. Displacement sensor based on intra-cavity tuning of dual-frequency gas laser (United States)

    Niu, Haisha; Niu, Yanxiong; Liu, Ning; Li, Jiyang


    A nanometer-resolution displacement measurement instrument based on tunable cavity frequency-splitting method is presented. One beam is split into two orthogonally polarized beams when anisotropic element inserted in the cavity. The two beams with fixed frequency difference are modulated by the movement of the reflection mirror. The changing law of the power tuning curves between the total output and the two orthogonally polarized beams is researched, and a method splitting one tuning cycle to four equal parts is proposed based on the changing law, each part corresponds to one-eighth wavelength of displacement. A laser feedback interferometer (LFI) and piezoelectric ceramic are series connected to the sensor head to calibrate the displacement that less than one-eighth wavelength. The displacement sensor achieves to afford measurement range of 20mm with resolution of 6.93nm.

  16. Frequency tracking and stabilization of a tunable dual-wavelength external-cavity diode laser (United States)

    Hsu, L.; Chi, L. C.; Wang, S. C.; Pan, Ci-Ling


    We show a unique dual-wavelength external-cavity laser diode with frequency tracking capability and obtain a stable beat frequency between the dual-wavelength output. By using a Fabry-Perot interferometer as the frequency discriminator and the time-gating technique in a servo loop, the peak-to-peak frequency fluctuations were stabilized, with respect to the Fabry-Perot cavity, to 86 kHz in the dual-wavelength output at 802.5 and 804.5 nm, and to 17 kHz in their 0.9 THz beat signal. Similar performance was achieved for tuning of the dual wavelength separation ranging from 0.2 to 4 nm.

  17. A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission. (United States)

    Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng


    By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate transmission is less than 2 dB for all 16 channels.

  18. Trace-gas sensing using the compliance voltage of an external cavity quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, Mark C.; Taubman, Matthew S.


    Quantum cascade lasers (QCLs) are increasingly being used to detect, identify, and measure levels of trace gases in the air. External cavity QCLs (ECQCLs) provide a broadly-tunable infrared source to measure absorption spectra of chemicals and provide high detection sensitivity and identification confidence. Applications include detecting chemical warfare agents and toxic industrial chemicals, monitoring building air quality, measuring greenhouse gases for atmospheric research, monitoring and controlling industrial processes, analyzing chemicals in exhaled breath for medical diagnostics, and many more. Compact, portable trace gas sensors enable in-field operation in a wide range of platforms, including handheld units for use by first responders, fixed installations for monitoring air quality, and lightweight sensors for deployment in unmanned aerial vehicles (UAVs). We present experimental demonstration of a new chemical sensing technique based on intracavity absorption in an external cavity quantum cascade laser (ECQCL). This new technique eliminates the need for an infrared photodetector and gas cell by detecting the intracavity absorption spectrum in the compliance voltage of the laser device itself. To demonstrate and characterize the technique, we measure infrared absorption spectra of chemicals including water vapor and Freon-134a. Sub-ppm detection limits in one second are achieved, with the potential for increased sensitivity after further optimization. The technique enables development of handheld, high-sensitivity, and high-accuracy trace gas sensors for in-field use.

  19. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Directory of Open Access Journals (Sweden)

    Min Zhao


    Full Text Available Objective: To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery. Methods: A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded. Results: The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05. The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05. The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05. The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05. The average healing time in the treatment group was significantly faster than that in the control group (P<0.05. Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  20. High Power Optical Cavity Design and Concept of Operations for a Shipboard Free Electron Laser Weapon System (United States)



  1. A low-temperature external cavity diode laser for broad wavelength tuning (United States)

    Tobias, William G.; Rosenberg, Jason S.; Hutzler, Nicholas R.; Ni, Kang-Kuen


    We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to the spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to -64 °C, more than 85 °C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation is achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers and extending the wavelength coverage of commercial laser diodes.

  2. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter


    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...... parameter dependencies are simply explained by the calculated return-maps. Our approach partly decouples the slow and the fast time-scale behaviour. The latter is often described in terms of chaotic itinerary, but this does not provide an explanation for the low-frequency fluctuations themselves....

  3. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.


    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...... based on the Green's function method is used for that purpose. Simple expressions for the linewidth in the case of AR-coated SOA output facets are derived and simulation results are given in the case of an output facet with a non-vanishing reflectivity. It is found that optimal conditions for a narrow...

  4. Field performance of an all-semiconductor laser coherent Doppler lidar

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian


    We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds...... measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable...

  5. Semiconductor laser having a non-absorbing passive region with beam guiding (United States)

    Botez, Dan (Inventor)


    A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

  6. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.


    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived...... and simulation results are given in the case of output facets with a nonvanishing reflectivity. A numerical model combining finite-element calculations in the transverse x-y plane and a longitudinal model based on the Green's function method is used for that purpose....

  7. Widely tunable terahertz source based on intra-cavity frequency mixing in quantum cascade laser arrays

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Aiting; Jung, Seungyong; Jiang, Yifan; Kim, Jae Hyun; Belkin, Mikhail A., E-mail: [Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Vijayraghavan, Karun [Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); ATX Photonics, 10100 Burnet Rd., Austin, Texas 78758 (United States)


    We demonstrate a compact monolithic terahertz source continuously tunable from 1.9 THz to 3.9 THz with the maximum peak power output of 106 μW at 3.46 THz at room temperature. The source consists of an array of 10 electrically tunable quantum cascade lasers with intra-cavity terahertz difference-frequency generation. To increase fabrication yield and achieve high THz peak power output in our devices, a dual-section current pumping scheme is implemented using two electrically isolated grating sections to independently control gain for the two mid-IR pumps.

  8. Controllable spiking patterns in long-wavelength vertical cavity surface emitting lasers for neuromorphic photonics systems

    Energy Technology Data Exchange (ETDEWEB)

    Hurtado, Antonio, E-mail: [Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow G1 1RD (United Kingdom); Javaloyes, Julien [Departament de Fisica, Universitat de les Illes Balears, c/Valldemossa km 7.5, 07122 Mallorca (Spain)


    Multiple controllable spiking patterns are achieved in a 1310 nm Vertical-Cavity Surface Emitting Laser (VCSEL) in response to induced perturbations and for two different cases of polarized optical injection, namely, parallel and orthogonal. Furthermore, reproducible spiking responses are demonstrated experimentally at sub-nanosecond speed resolution and with a controlled number of spikes fired. This work opens therefore exciting research avenues for the use of VCSELs in ultrafast neuromorphic photonic systems for non-traditional computing applications, such as all-optical binary-to-spiking format conversion and spiking information encoding.

  9. Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren


    Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic co...... compounds. We model the physics as a change in the top mirror loss caused by swelling of the polymer upon absorbing the target volatile organic compound. Further we show how acetone vapors at 82 000 ppm concentration can change the polymer coated VCSEL output power by 20 mu W....

  10. Noise Suppression on the Tunable Laser for Precise Cavity Length Displacement Measurement

    Czech Academy of Sciences Publication Activity Database

    Šmíd, Radek; Čížek, Martin; Mikel, Břetislav; Hrabina, Jan; Lazar, Josef; Číp, Ondřej


    Roč. 16, č. 9 (2016), 1428:1-11 ISSN 1424-8220 R&D Projects: GA ČR(CZ) GPP102/12/P962; GA ČR GB14-36681G; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : Fabry-Perot cavity * unbalance Michelson interferometer * noise suppression * heterodyne interferometry * displacement measurement Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.677, year: 2016

  11. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica


    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  12. Mode-locked semiconductor laser for long and absolute distance measurement based on laser pulse repetition frequency sweeping: a comparative study between three types of lasers (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.


    In this work we present a study on three types of semiconductor mode-locked lasers as possible sources for a high precision absolute distance metrology measurement concept based on pulse repetition frequency (PRF) sweep. In this work, we evaluated one vertical emission laser and two transversal emission sources. The topology of the gain element is quantum-well, quantum-dot and quantum-dash, respectively. Only the vertical emission laser has optical pump, whilst the others operate with electric pumping. The quantum-dash laser does not have a saturable absorber in its configuration but relies on a dispersion compensating fiber for generating pulses. The bottleneck of vertical emission laser is his high power density pump (4.5W/165μm), increasing the vulnerability of damaging the gain element. The other lasers, i.e., the single (quantum-dash) and double section (quantum-dot) lasers present good results either in terms of applicability to the metrology system or in terms of robustness. Using RF injection on the gain element, both lasers show good PRF stabilization results (better than σy(10ms) = 10-9 ) which is a requirement for the mentioned metrology technique.

  13. Laser-induced cluster-ions from thin foils of metals and semiconductors

    International Nuclear Information System (INIS)

    Fuerstenau, N.; Hillenkamp, F.


    Interaction of focused, very high-energy pulses of UV laser light of some 10 8 W cm -2 with thin foils of metals and semiconductors induces solid-gas phase-transitions and ionization of microvolumes of the target material. Mass-spectrometric analysis of the microplasma reveals singly ionized cluster-ions as final products of the interaction processes. Cluster-ion distributions are measured and compared with those obtained in thermal evaporation, high-frequency spark and SIMS experiments. The distributions are shown to be characteristic of the investigated material. While some of their features can be understood in terms of theories of cluster stability, other qualities, also observed in SIMS and evaporation experiments, are thought to be due to the partially non-equilibrium character of the solid-gas phase-transition. Furthermore, estimations concerning parameters of the laser-induced microplasma can be drawn from the distributions. (orig.)

  14. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers (United States)

    Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang


    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

  15. New semiconductor laser technology for gas sensing applications in the 1650nm range (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris


    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  16. Observations of cavity polaritons in one-dimensional photonic crystals containing a liquid-crystalline semiconductor based on perylene bisimide units (United States)

    Sakata, T.; Suzuki, M.; Yamamoto, T.; Nakanishi, S.; Funahashi, M.; Tsurumachi, N.


    We investigated the optical transmission properties of one-dimensional photonic crystal (1D-PC) microcavity structures containing the liquid-crystalline (LC) perylene tetracarboxylic bisimide (PTCBI) derivative. We fabricated the microcavity structures for this study by two different methods and observed the cavity polaritons successfully in both samples. For one sample, since the PTCBI molecules were aligned in the cavity layer of the 1D-PC by utilizing a friction transfer method, vacuum Rabi splitting energy was strongly dependent on the polarization of the incident light produced by the peculiar optical features of the LC organic semiconductor. For the other sample, we did not utilize the friction transfer method and did not observe such polarization dependence. However, we did observe a relatively large Rabi splitting energy of 187 meV, probably due to the improvement of optical confinement effect.

  17. GaN nanostructure-based light emitting diodes and semiconductor lasers. (United States)

    Viswanath, Annamraju Kasi


    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  18. Characterization technique for long optical fiber cavities based on beating spectrum of multi-longitudinal mode fiber laser and beating spectrum in the RF domain (United States)

    Adib, George A.; Sabry, Yasser M.; Khalil, Diaa


    The characterization of long fiber cavities is essential for many systems to predict the system practical performance. The conventional techniques for optical cavity characterization are not suitable for long fiber cavities due to the cavities' small free spectral ranges and due to the length variations caused by the environmental effects. In this work, we present a novel technique to characterize long fiber cavities using multi-longitudinal mode fiber laser source and RF spectrum analyzer. The fiber laser source is formed in a ring configuration, where the fiber laser cavity length is chosen to be 15 km to ensure that the free spectral range is much smaller than the free spectral range of the characterized passive fiber cavities. The method has been applied experimentally to characterize ring cavities with lengths of 6.2 m and 2.4 km. The results are compared to theoretical predictions with very good agreement.

  19. Fiber ring laser sensor based on Fabry-Perot cavity interferometer for temperature sensing (United States)

    Zou, Hui; Ma, Lei; Xiong, Hui; Zhang, Yunshan; Li, Yong Tao


    A ring laser temperature sensor based on a novel reflective fiber Fabry-Perot (F-P) interferometer air cavity is proposed and experimentally demonstrated. The reflective F-P air cavity, which consists of a segment of glass capillary inserted between two single-mode fibers, is utilized as a sensing element as well as as a filter in the fiber ring cavity. As temperature increases, the reflection spectra of the F-P sensor move towards the longer wavelength, and then cause lasing wavelength shifts. By monitoring the variation of lasing wavelength, we obtain a temperature sensor system with a high temperature sensitivity of 0.249 nm °C-1, a narrow 3 dB bandwidth of 0.1514 nm, and a high signal-to-noise ratio of 52 dB. Moreover, it is convenient to fabricate the sensor head, and the stability is very good, giving it a wide range of applications.

  20. Development of a pulsed laser with emission at 1053 nm for Cavity Ring-Down Spectroscopy

    International Nuclear Information System (INIS)

    Cavalcanti, Fabio


    In this work, a pulsed and Q-switched laser resonator was developed using the double-beam mode-controlling technique. A Nd:LiYF4 crystal with 0,8mol% of doping concentration was used to generate a giant pulse with duration of 5,5 ns (FWHM), 1,2 mJ of energy and 220 kW peak power for the Cavity Ring-Down Spectroscopy (CRDS) technique. The CRDS technique is used to measure absorption spectra for gases, liquids and solids. With the CRDS technique it is possible to measure losses with high degree of accuracy, underscoring the sensitivity that is confirmed by the use of mirrors with high reflectivity. With this technique, the losses by reflection and scattering of transparent materials were evaluated. By calibrating the resonant cavity, it was possible to measure the losses in the samples with resolution of 0,045%, the maximum being reached by 0,18%. The calibration was possible because there was obtained to measure a decay time of approximately 20 μs with the empty cavity. Besides was obtained a method for determining the refractive index of transparent materials with accuracy of five decimals. (author)

  1. Laser frequency stabilization and control of optical cavities with suspended mirrors for the VIRGO interferometric detector of gravitational waves

    International Nuclear Information System (INIS)

    Barsuglia, Matteo


    The VIRGO detector is an interferometer with 3 km Fabry-Perot cavities in the arms. It is aimed at the detection of gravitational radiation emitted by astrophysical sources. This thesis comprises two independent parts. The first part is devoted to the laser frequency stabilization. In the second one we present a study of a suspended cavity. We determine the impact of laser frequency fluctuations on the overall VIRGO sensitivity. We study the frequency stabilization of the interferometer considered as an ultra-stable standard and we evaluate the noise pertaining to different signals taken into consideration. A strategy of control is discussed. We then study the VIRGO mode-cleaner prototype, a 30 m suspended triangular cavity, for which we have developed a control in order to keep it locked. Finally, we characterize this cavity in terms of mode spectra, finesse and mechanical transfer functions. (author)

  2. Dry etching method for compound semiconductors (United States)

    Shul, Randy J.; Constantine, Christopher


    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  3. Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities. (United States)

    Hashemi, Ehsan; Bengtsson, Jörgen; Gustavsson, Johan; Calciati, Marco; Goano, Michele; Haglund, Åsa


    Lateral leakage of light has been identified as a detrimental loss source in many suggested and experimentally realized GaN-based VCSELs. In the present work we include thermal effects to realistically account for the substantial Joule heating in these devices. In contrast to what could be expected from the previous results, the induced thermal lensing does not make antiguided cavities more positively guided, so that they approach the unguided regime with extremely high lateral leakage. Rather, thermal lensing strongly suppresses lateral leakage for both antiguided and guided cavities. This is explained in terms of lowered launch of power from the central part of the cavity and/or lower total internal reflection in the peripheral part; the former effect is active in all cavities whereas the latter only contributes to the very strongly reduced leakage in weakly antiguided cavities. Thermal lensing suppresses lateral leakage both for the fundamental and the first higher order mode, but a strong modal discrimination is still achieved for the antiguided cavities. Thus, strongly antiguided cavities could be used to achieve single-mode devices, but at the cost of slightly higher threshold gain and stronger temperature dependent performance characteristics.

  4. Spectrophotometric resonant measurement of wavelength phase dispersion on femtosecond laser cavities and single elements during their fabrication (United States)

    Bukhshtab, Michael A.


    A spectrophotometric reflection technique and measurement results of wavelength phase dispersion on femtosecond laser cavities and distinct elements are reported. In contrast to novel frequency-domain and interferometric Fourier-transform methods, the proposed reflection-based measurement procedure maintains a notably high sensitivity while studying either cavities or single elements. Resolved phase spectrums are evaluated using a standard spectrophotometer with a single-beam reflection attachment.

  5. Dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael


    The temporal dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback is studied experimentally. Different dynamics are observed when different lateral modes are selected. When the feedback mirror is aligned perfectly and high-order modes are selected, in most of the c......The temporal dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback is studied experimentally. Different dynamics are observed when different lateral modes are selected. When the feedback mirror is aligned perfectly and high-order modes are selected, in most....... When the feedback mirror is aligned non-perfectly, pulse-package oscillation is observed, for the first time to our knowledge, in a diode laser with long-cavity feedback....

  6. Cubic zirconia as a high-quality facet coating for semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chin, A.K.; Satyanarayan, A.; Zarrabi, J.H.; Vetterling, W.


    In this paper we describe the properties of high-quality, semiconductor laser facet coatings based on yttria-stabilizied cubic zirconia (90-m% ZrO/sub 2//10-m% Y/sub 2/O/sub 3/). We have found that cubic zirconia films can be reproducibly deposited by electron-beam evaporation with an index of refraction of 1.98 at 6328 A, almost ideal for use as a single-layer antireflection coating for GaAs/GaAlAs-based lasers. ZrO/sub 2/ has a monoclinic crystal structure at room temperature, but changes to tetragonal, hexagonal, and cubic phases upon heating to higher temperatures. However, the addition of the Y/sub 2/O/sub 3/ stabilizes ZrO/sub 2/ in the cubic form, thus allowing electron-beam deposition of thin films of this material to be more controllable and reproducible without the usual addition of oxygen into the vacuum chamber during deposition. Preliminary aging tests of high-power GaAs/GaAlAs lasers show that cubic zirconia films suppress the photo-enhanced oxidation of laser facets that degrades device performance.

  7. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning


    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  8. Bifurcation to square-wave switching in orthogonally delay-coupled semiconductor lasers: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Masoller, C. [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, ES-08222 Terrassa, Barcelona (Spain); Sukow, D. [Institute for Cross-Disciplinary Physics and Complex Systems, Campus Universitat de les Illes Balears, ES-07122 Palma de Mallorca (Spain); Gavrielides, A. [Air Force Research Laboratory, AFRL/EOARD, 86 Blenheim Crescent, Ruislip Middlesex HA4 7HB (United Kingdom); Sciamanna, M. [Optics and Electronics (OPTEL) Research Group, Laboratoire Materiaux Optiques, Photonique et Systemes (LMOPS), Supelec, 2 Rue Edouard Belin, FR-57070 Metz (France)


    We analyze the dynamics of two semiconductor lasers with so-called orthogonal time-delayed mutual coupling: the dominant TE (x) modes of each laser are rotated by 90 deg. (therefore, TM polarization or y) before being coupled to the other laser. Although this laser system allows for steady-state emission in either one or in both polarization modes, it may also exhibit stable time-periodic dynamics including square waveforms. A theoretical mapping of the switching dynamics unveils the region in parameter space where one expects to observe long-term time-periodic mode switching. Detailed numerical simulations illustrate the role played by the coupling strength, the mode frequency detuning, or the mode gain to loss difference. We complement our theoretical study with several experiments and measurements. We present time series and intensity spectra associated with the characteristics of the square waves and other waveforms observed as a function of the strength of the delay coupling. The experimental observations are in very good agreement with the analysis and the numerical results.

  9. High temperature semiconductor diode laser pumps for high energy laser applications (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel


    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  10. Auger Processes Mediating the Nonresonant Optical Emission from a Semiconductor Quantum Dot Embedded Inside an Optical Cavity

    DEFF Research Database (Denmark)

    Settnes, Mikkel; Nielsen, Per Kær; Lund, Anders Mølbjerg


    perform microscopic calculations of the effect treating the wetting layer as a non-Markovian reservoir interacting with the coupled quantum dot-cavity system through Coulomb interactions. Experimentally, cavity feeding has been observed in the asymmetric detuning range of -10 to +45 meV. We show...

  11. Switchable dual-wavelength single-longitudinal-mode erbium-doped fiber laser using an inverse-Gaussian apodized fiber Bragg grating filter and a low-gain semiconductor optical amplifier. (United States)

    Lin, Bo; Tjin, Swee Chuan; Zhang, Han; Tang, Dingyuan; Hao, Jianzhong; Dong, Bo; Liang, Sheng


    We present a stable and switchable dual-wavelength erbium-doped fiber laser. In the ring cavity, an inverse-Gaussian apodized fiber Bragg grating serves as an ultranarrow dual-wavelength passband filter, a semiconductor optical amplifier biased in the low-gain regime reduces the gain competition of the two wavelengths, and a feedback fiber loop acts as a mode filter to guarantee a stable single-longitudinal-mode operation. Two lasing lines with a wavelength separation of approximately 0.1 nm are obtained experimentally. A microwave signal at 12.51 GHz is demonstrated by beating the dual wavelengths at a photodetector.

  12. Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers (United States)

    Li, J.; Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)


    A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum

  13. Dual-wavelength erbium-doped fiber laser with asymmetric fiber Bragg grating Fabry-Perot cavity (United States)

    Chen, Cong; Xu, Zhi-wei; Wang, Meng; Chen, Hai-yan


    A novel dual-wavelength fiber laser with asymmetric fiber Bragg grating (FBG) Fabry-Perot (FP) cavity is proposed and experimentally demonstrated. A couple of uniform FBGs are used as the cavity mirrors, and the third FBG is used as intracavity wavelength selector by changing its operation temperature. Experimental results show that by adjusting the operation temperature of the intracavity wavelength selector, a tunable dual-wavelength laser emission can be achieved. The results demonstrate the new concept of dual-wavelength lasing with asymmetric FBG FP resonator and its technical feasibility.

  14. Single mode operation in a pulsed Ti:sapphire laser oscillator with a grazing-incidence four-mirror cavity

    CERN Document Server

    Ko, D K; Binks, D J; Gloster, L A W; King, T A


    We demonstrate stable single mode operation in a pulsed Ti:sapphire laser oscillator with a novel grazing-incidence four-mirror coupled cavity. This cavity consists of a grating, a gain medium, and four mirrors and, therefore, has a four-arm interferometer configuration. Through the interferometric effect, we could suppress the adjacent modes and obtain stable single mode operation with a bandwidth of < 200 MHz. We also have developed a general analysis of the laser modes and the threshold conditions for configuration and the experimental results agree well with the theoretical predictions.

  15. 5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.


    Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

  16. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices (United States)

    Horn, Kevin M.


    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  17. Design and Applications of In-Cavity Pulse Shaping by Spectral Sculpturing in Mode-Locked Fibre Lasers

    Directory of Open Access Journals (Sweden)

    Sonia Boscolo


    Full Text Available We review our recent progress on the realisation of pulse shaping in passively-mode-locked fibre lasers by inclusion of an amplitude and/or phase spectral filter into the laser cavity. We numerically show that depending on the amplitude transfer function of the in-cavity filter, various regimes of advanced waveform generation can be achieved, including ones featuring parabolic-, flat-top- and triangular-profiled pulses. An application of this approach using a flat-top spectral filter is shown to achieve the direct generation of high-quality sinc-shaped optical Nyquist pulses with a widely tunable bandwidth from the laser oscillator. We also present the operation of an ultrafast fibre laser in which conventional soliton, dispersion-managed soliton (stretched-pulse and dissipative soliton mode-locking regimes can be selectively and reliably targeted by adaptively changing the dispersion profile and bandwidth programmed on an in-cavity programmable filter. The results demonstrate the strong potential of an in-cavity spectral pulse shaper for achieving a high degree of control over the dynamics and output of mode-locked fibre lasers.

  18. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation (United States)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  19. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael


    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  20. Volume Bragg grating external cavities for the passive phase locking of high-brightness diode laser arrays: theoretical and experimental study

    DEFF Research Database (Denmark)

    Paboeuf, David; Vijayakumar, Deepak; Jensen, Ole Bjarlin


    We describe the theoretical modeling of the external-cavity operation of a phase-locked array of diode lasers in two configurations, the self-imaging cavity based on the Talbot effect and the angular-filtering cavity. Complex filtering functions, such as the transmission or reflection of a volume...

  1. Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures

    CERN Document Server

    Liang, J S; Huang, Y S; Tien, C W; Chang, Y M; Chen, C W; Li, N Y; Tiong, K K; Pollak, F H


    We have investigated an 850 nm GaAs/GaAlAs (001) vertical-cavity surface-emitting laser (VCSEL) structure using angle- and temperature-dependent surface photovoltage spectroscopy (SPS). The SPS measurements were performed as functions of angle of incidence (0 deg. <= theta <= 60 deg.) and temperature (25 deg. C <= T <= 215 deg. C) for both the metal-insulator-semiconductor (MIS) and wavelength-modulated MIS configurations. Angle-dependent reflectance (R) measurements have also been performed to illustrate the superior features of the SPS technique. The SPS spectra exhibit both the fundamental conduction to heavy-hole excitonic transition of quantum well and cavity mode (CM) plus a rich interference pattern related to the mirror stacks, whereas in the R spectra only the CM and interference features are clearly visible. The variations of SPS spectra as functions of incident angle and temperature enable exploration of light emission from the quantum well confined in a microcavity with relation to the...

  2. Mode selection laser

    DEFF Research Database (Denmark)


    The invention relates to a semiconductor mode selection laser, particularly to a VCSEL laser (200) having mode selection properties. The mode selection capability of the laser is achieved by configuring one of the reflectors (15,51) in the resonance cavity so that a reflectivity of the reflector...... (15) varies spatially in one dimension or two dimensions. Accordingly, the reflector (15) with spatially varying reflectivity is part both of the resonance cavity and the mode selection functionality of the laser. A plurality of the lasers configured with different mode selectors, i.e. different...... spatial reflector variations, may be combined to generate a laser beam containing a plurality of orthogonal modes. The laser beam may be injected into a few- mode optical fiber, e.g. for the purpose of optical communication. The VCSEL may have intra-cavity contacts (31,37) and a Tunnel junction (33...

  3. Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

    International Nuclear Information System (INIS)

    Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan


    Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

  4. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

    Directory of Open Access Journals (Sweden)

    Medvid Artur


    Full Text Available Abstract On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity.

  5. Microleakage of Er:YAG laser and dental bur prepared cavities in primary teeth restored with different adhesive restorative materials. (United States)

    Baghalian, Ali; Nakhjavani, Yahya B; Hooshmand, Tabassom; Motahhary, Pouria; Bahramian, Hoda


    The purpose of this study was to evaluate and compare the effect of erbium:yttrium-aluminum-garnet (Er:YAG) laser irradiation and conventional dental bur cavity preparation on in vitro microleakage of class V cavities restored with different adhesive restorative materials and two types of self-etching adhesives in primary teeth. Standard class V cavities were prepared on 80 extracted primary, and the teeth were randomly divided into eight subgroups prepared either by dental bur or Er:YAG laser irradiation and then restored with self-cured glass ionomer (GI), resin-modified glass ionomer (RMGI), resin composite and Clearfil SE Bond (two-step self-etching adhesive), and resin composite and Clearfil S3 Bond (one-step self-etching adhesive). Restorations were finished and stored in distilled water at 37 °C for 24 h and then subjected to thermocycling. All the teeth were sealed with nail varnish, placed in a silver nitrate solution, and then vertically cut in a buccolingually direction. Subsequently, the specimens were evaluated for gingival and occlusal microleakage using a stereomicroscope. Data were analyzed using Kruskal-Wallis test followed by Mann-Whitney test. Wilcoxon test was used for comparing occlusal microleakage with gingival microleakage at p laser irradiation resulted in a significantly higher degree of microleakage only at the gingival margins for teeth restored with GI or RMGI, or composite and Clearfil S3 Bond compared with the bur preparation. The Er:YAG laser-prepared teeth restored with composite and Clearfil SE Bond demonstrated a better marginal seal on occlusal and gingival margins compared with that of bur-prepared cavities. The degree of microleakage in class V cavities was affected by the type of adhesive restorative materials, type of self-etching adhesive, cavity margin location, and tooth preparation method either by Er:YAG laser or dental bur.

  6. Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

    Energy Technology Data Exchange (ETDEWEB)

    Feng, M.; Iverson, E. W.; Wang, C. Y.; Holonyak, N. [Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, Illinois 61801 (United States)


    For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.

  7. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto


    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  8. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    International Nuclear Information System (INIS)

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P.


    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 μm complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate ω 0.5 filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging

  9. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid

    International Nuclear Information System (INIS)

    Tavares, Henrique Dutra Simoes


    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

  10. In vivo comparison of cavity disinfection efficacy with APF gel, Propolis, Diode Laser, and 2% chlorhexidine in primary teeth

    Directory of Open Access Journals (Sweden)

    P.V.M. Uday Mohan


    Full Text Available Background: The survival of atraumatic restorative treatment (ART restorations would be enhanced if near total elimination of cariogenic microorganisms could be done in the process of cavity cleaning before placing a restoration. Thus, use of disinfecting agents for achieving this goal could herald a new beginning in the field of contemporary dentistry. Aim: To assess and compare the cavity disinfection efficacy of APF gel, Brazilian Propolis, Diode Laser, and 2% chlorhexidine (CHX. Materials and Methods: The study was a randomized, single blinded, parallel grouped, active controlled trial. Eighty primary molars in 68 children with cavitated dentinal occlusal caries were randomly assigned into four groups (20 teeth each Group I: APF gel; Group II: Propolis; Group III: Diode Laser, and Group IV: 2% CHX (control. After cavity preparation using ART procedure, dentinal samples collected before and after disinfection with respective agent of the group. These samples were subjected to microbiological evaluation, for total viable count (TVC on blood agar, Streptococcus mutans on mutans-sanguis (MS agar, and Lactobacilli (LB on Rogosa agar. Results: Intragroup comparison (Wilcoxon signed rank test showed significant reductions in TVC, MS, and LB counts in all the groups. Pairwise Mann–Whitney test showed APF gel had least bacterial reductions among the agents tested. Conclusion: This study illustrated the need for cavity disinfection. Diode Laser and Brazilian Propolis are equally effective as 2% CHX in cavity disinfection.

  11. Flattop mode shaping of a vertical cavity surface emitting laser using an external-cavity aspheric mirror. (United States)

    Yang, Zhaohui; Leger, James


    Both square-shaped and circular-shaped flattop modes were experimentally demonstrated in extended-cavity broad-area VCSELs using aspheric feedback mirrors. These refractive aspheric mirrors were fabricated by electron-beam lithography on curved substrates. Excellent single-mode operation and improved power extraction efficiency were observed. The three-mirror structure of the VCSEL and the state-of-the-art fabrication of the aspheric mirror contribute to the superior VCSEL performance. The modal loss analysis using a rigid three-mirror-cavity simulation method is discussed.

  12. Theoretical Investigation of Subwavelength Gratings and Vertical Cavity Lasers Employing Grating Structures

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza

    . Though both sides of the grating layer are not surrounded by low refractive-index materials as in high-index-contrast gratings (HCGs), the HG can provide a near-unity reflectivity over a broader wavelength range than HCGs, or work as a resonator with a quality (Q) factor as high as 109. The physics...... behind these reflector and resonator properties are studied thoroughly. A HG structure comprising a III-V cap layer with a gain material and a Si grating layer enables the realization of a compact vertical cavity laser integrated on Si platform, which has a superior thermal property and fabrication......-factor is investigated, which shows that the uncertainty in the Q-factor can be several orders of magnitude larger than the uncertainty in the resonance frequency. Next, the HG is shown to possess a near-unity reflectivity in a broad wavelength range, which can be broader than the HCG, since the cap layer introduces...

  13. Alignment-stabilized interference filter-tuned external-cavity quantum cascade laser. (United States)

    Kischkat, Jan; Semtsiv, Mykhaylo P; Elagin, Mikaela; Monastyrskyi, Grygorii; Flores, Yuri; Kurlov, Sergii; Peters, Sven; Masselink, W Ted


    A passively alignment-stabilized external cavity quantum cascade laser (EC-QCL) employing a "cat's eye"-type retroreflector and an ultra-narrowband transmissive interference filter for wavelength selection is demonstrated and experimentally investigated. Compared with conventional grating-tuned ECQCLs, the setup is nearly two orders of magnitude more stable against misalignment of the components, and spectral fluctuation is reduced by one order of magnitude, allowing for a simultaneously lightweight and fail-safe construction, suitable for applications outdoors and in space. It also allows for a substantially greater level of miniaturization and cost reduction. These advantages fit in well with the general properties of modern QCLs in the promise to deliver useful and affordable mid-infrared-light sources for a variety of spectroscopic and imaging applications.

  14. The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers (United States)

    Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang


    In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

  15. Performance of resonator fiber optic gyroscope using external-cavity laser stabilization and optical filtering (United States)

    Qiu, Tiequn; Wu, Jianfeng; Strandjord, Lee K.; Sanders, Glen A.


    A bench-top resonator fiber optic gyroscope (RFOG) was assembled and tested, showing encouraging progress toward navigation grade performance. The gyro employed a fiber length of 19 meters of polarizing fiber for the sensing coil which was wound on an 11.5 cm diameter PZT cylinder. A bias stability of approximately 0.1 deg/hr was observed over a 2 hour timeframe, which is the best bias stability reported to date in an RFOG to our knowledge. Special care was taken to minimize laser phase noise, including stabilization to an optical cavity which was also used for optical filtering, giving angle random walk (ARW) values in the range of 0.008 deg/rt-hr. The ARW performance and bias stability are within 2x and 10x, respectively, of many civil inertial navigation grade requirements.

  16. Polarized γ source based on Compton backscattering in a laser cavity

    Directory of Open Access Journals (Sweden)

    V. Yakimenko


    Full Text Available We propose a novel gamma source suitable for generating a polarized positron beam for the next generation of electron-positron colliders, such as the International Linear Collider (ILC, and the Compact Linear Collider (CLIC. This 30-MeV polarized gamma source is based on Compton scattering inside a picosecond CO_{2} laser cavity generated from electron bunches produced by a 4-GeV linac. We identified and experimentally verified the optimum conditions for obtaining at least one gamma photon per electron. After multiplication at several consecutive interaction points, the circularly polarized gamma rays are stopped on a target, thereby creating copious numbers of polarized positrons. We address the practicality of having an intracavity Compton-polarized positron source as the injector for these new colliders.

  17. Cavity-augmented frequency tripling of a continuous wave mode-locked laser

    International Nuclear Information System (INIS)

    McConnell, Gail; Ferguson, Allister I.; Langford, Nigel


    We present a model and experimental investigation of a singly-resonant optical cavity to enhance the nonlinear conversion efficiency of a continuous wave mode-locked all-solid-state laser source to produce an efficient source of ultraviolet radiation. For input pulses of approximately 33 ps duration at 4.4 ns intervals, our model predicts greater than 30% conversion from fundamental to third harmonic which is particularly attractive for fundamental sources of modest average power. Experimentally, we have achieved overall optical conversion efficiencies from fundamental to third harmonic wavelength typically greater than 11%, compared with less than 0.4% in a single pass geometry. We have measured an average power of 320 mW at λ=355 nm at picosecond pulse duration, which corresponds to a generated third harmonic average power of 0.5 W. (author)

  18. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)


    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms.

  19. Coupled opto electronic oscillator with a passively mode locked extended cavity diode laser

    International Nuclear Information System (INIS)

    Lee, Jeongmin; Jang, Gwang Hoon; Yoon, Duseong; Song, Minsoo; Yoon, Tai Hyun


    An opto electronic oscillator(OEO)has very unique properties compared to the conventional quartz based microwave oscillators in that its oscillation frequency is determined by the beat note frequency of a phase coherent optical frequency comb generated as a side bands to an optical single mode carrier by using an electro optic modulator (EOM)or a direct current modulation of a semiconductor laser. Recently, a different type of OEO called a COEO has been demonstrated, where the optical carrier in the OEO system has been replaced by a mode locked laser so that an EOM or a direct current modulation are no longer necessary, but has potentially a much lower phase noise thanks to the high Q value of the optical frequency comb due to the mode locking mechanism. In this paper, we propose and demonstrate a COEO based on a passively mode locked ECDL at 852nm in which the fourth harmonic of the repetition frequency of the ECDL matched exactly the ground state hyperfine splitting frequency of the Cs atoms

  20. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.


    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  1. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers (United States)

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang


    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley – Read – Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  2. Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR (United States)

    Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud


    Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (state of the art commercial technologies thanks to a combination of power-coherence-wavelength tunability performances and integration.

  3. Scanning electron microscopy evaluation of the interaction pattern between dentin and resin after cavity preparation using Er:YAG laser

    International Nuclear Information System (INIS)

    Schein, Marcelo Thome


    The aim of this study was to describe the interaction pattern formed between dentin and resin on cavities prepared with an erbium laser (Er:YAG). The morphological aspect of the irradiated dentin after acid etching was also observed. Ten dentin disks were obtained from fresh extracted third molars. Each disk received two cavities, one prepared with a conventional high-speed drill, while the other cavity was obtained by the use of an Er:YAG laser (KaVo KEY Laser, KaVo Co.). The laser treatment was performed with 250 mJ/pulse, 4 Hz, non contact mode, focused beam, and a fine water mist was used. Five disks were prepared for morphological analysis of the acid etched dentin. The other five disks had their cavities restored with Single Bond (3M) followed by Z100 resin (3M). The specimens were observed under scanning electron microscopy after dentin-resin interface demineralization and deproteinization. It was observed that the morphological characteristics of the acid-etched irradiated dentin were not favorable to the diffusion of monomers through the collagen network. The dentin resin interfacial aspect of irradiated dentin, after acid etching, showed thin tags and scarce hybridization zones, which agreed with the morphology of the irradiated and acid-etched dentin substrate observed. (author)

  4. The effect of an Er,Cr:YSGG laser on external adaptation of healthy and decayed cavities (United States)

    Kabbach, William; Rodrigues Tonetto, Mateus; Frizzera, Fausto; Zezéll, Denise Maria; Coelho Bandéca, Matheus; Alves Campos, Edson; Henrique Borges, Alvaro; Ferrarezi Andrade, Marcelo


    The aim of this study was to evaluate the influence of chlorhexidine and Er,Cr:YSGG laser irradiation on the bond strength and external adaptation in mixed healthy and caries-affected class V cavities before and after thermal cycling. Thirty-six cavity preparations were made in mixed class V buccal human molars, half of them being artificially caries-induced. Any remaining affected dentin was removed from the cavity with a round burr at low speed. The teeth were divided into six groups, according to cleaning agent for both healthy and caries-induced dentin: no treatment, chlorhexidine and erbium, chromium-doped: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) laser irradiation. A Filtek P90 (3M ESPE, St Paul, MN, USA) silorane adhesive restorative system was used. The specimens were subjected to 5000 thermal cycles (5-55 °C 60 min). Epoxy replicas were obtained to characterize the external adaptation under scanning electron microscopy. The average percentages of non-continuous margins were 5.41% and 6.49% in enamel dentin before thermal cycling and 25% and 33.7% after thermal cycling, respectively. The caries-affected and laser irradiated cavities showed higher non-continuous margins. Thermal cycling was able to raise the percentage of non-continuous margin for all groups. Chlorhexidine did not affect the marginal adaptation results, and the Er,Cr: YSGG laser irradiation showed significantly worse results compared with the control group.

  5. Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating (United States)

    Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki


    We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (cavity DFB laser to output another stable wavelength beam with a narrow bandwidth of 0.27 nm. A frequency difference for dual-wavelength operation of 0.88 THz was achieved and an output power of up to 415 mW was obtained. The external-cavity DFB laser showed a stable dual-wavelength operation over the practical current and temperature ranges.

  6. Active layer position optimization in asymmetric AlGaInAs/AlGaAs semiconductor laser diode structures (United States)

    Abbasi, Seyed Peyman; Mahdieh, Mohammad Hossein


    In semiconductor lasers design, asymmetric structure can be used to improve laser characteristics. In this paper we proposed asymmetric AlGaInAs/AlGaAs structure for 808 nm laser diode to increase the n-cladding layer effect in beam propagation. In our proposed design, the active layer position in waveguide region was optimized for obtaining maximum optical power and minimum threshold current. The results show that the active layer position in waveguide related linearly to the asymmetric parameter. The results also show that in compare with usual structure, our proposed asymmetric structure can enhance the optical fiber coupling efficiency.

  7. Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser (United States)

    Holub, M.; Bhattacharya, P.; Shin, J.; Saha, D.


    An electroluminescence circular polarization of 23% and threshold current reduction of 11% are obtained in an electrically pumped spin-polarized vertical-cavity surface-emitting laser. Electron spin injection is accomplished utilizing a regrown Fe/ n-AlGaAs Schottky tunnel barrier deposited around the base of the laser mesas. Negligible circular polarizations and threshold current reductions are measured for nonmagnetic and Fe-based control VCSELs, which provides convincing evidence of spin injection, transport, and detection in our spin-polarized laser.

  8. Cavity-enhanced quantum-cascade laser-based instrument for carbon monoxide measurements. (United States)

    Provencal, Robert; Gupta, Manish; Owano, Thomas G; Baer, Douglas S; Ricci, Kenneth N; O'Keefe, Anthony; Podolske, James R


    An autonomous instrument based on off-axis integrated cavity output spectroscopy has been developed and successfully deployed for measurements of carbon monoxide in the troposphere and tropopause onboard a NASA DC-8 aircraft. The instrument (Carbon Monoxide Gas Analyzer) consists of a measurement cell comprised of two high-reflectivity mirrors, a continuous-wave quantum-cascade laser, gas sampling system, control and data-acquisition electronics, and data-analysis software. CO measurements were determined from high-resolution CO absorption line shapes obtained by tuning the laser wavelength over the R(7) transition of the fundamental vibration band near 2172.8 cm(-1). The instrument reports CO mixing ratio (mole fraction) at a 1-Hz rate based on measured absorption, gas temperature, and pressure using Beer's Law. During several flights in May-June 2004 and January 2005 that reached altitudes of 41,000 ft (12.5 km), the instrument recorded CO values with a precision of 0.2 ppbv (1-s averaging time) and an accuracy limited by the reference CO gas cylinder (uncertainty < 1.0%). Despite moderate turbulence and measurements of particulate-laden airflows, the instrument operated consistently and did not require any maintenance, mirror cleaning, or optical realignment during the flights.

  9. External cavity cascade diode lasers tunable from 3.05 to 3.25 μm (United States)

    Wang, Meng; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Lu, Ming; Stein, Aaron; Belenky, Gregory


    The external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ˜25 meV of tuning range.

  10. Beam collimation and energy spectrum compression of laser-accelerated proton beams using solenoid field and RF cavity

    International Nuclear Information System (INIS)

    Teng, J.; Gu, Y.Q.; Zhu, B.; Hong, W.; Zhao, Z.Q.; Zhou, W.M.; Cao, L.F.


    This paper presents a new method of laser produced proton beam collimation and spectrum compression using a combination of a solenoid field and a RF cavity. The solenoid collects laser-driven protons efficiently within an angle that is smaller than 12 degrees because it is mounted few millimeters from the target, and collimates protons with energies around 2.3 MeV. The collimated proton beam then passes through a RF cavity to allow compression of the spectrum. Particle-in-cell (PIC) simulations demonstrate the proton beam transport in the solenoid and RF electric fields. Excellent energy compression and collection efficiency of protons are presented. This method for proton beam optimization is suitable for high repetition-rate laser acceleration proton beams, which could be used as an injector for a conventional proton accelerator

  11. Beam collimation and energy spectrum compression of laser-accelerated proton beams using solenoid field and RF cavity (United States)

    Teng, J.; Gu, Y. Q.; Zhu, B.; Hong, W.; Zhao, Z. Q.; Zhou, W. M.; Cao, L. F.


    This paper presents a new method of laser produced proton beam collimation and spectrum compression using a combination of a solenoid field and a RF cavity. The solenoid collects laser-driven protons efficiently within an angle that is smaller than 12 degrees because it is mounted few millimeters from the target, and collimates protons with energies around 2.3 MeV. The collimated proton beam then passes through a RF cavity to allow compression of the spectrum. Particle-in-cell (PIC) simulations demonstrate the proton beam transport in the solenoid and RF electric fields. Excellent energy compression and collection efficiency of protons are presented. This method for proton beam optimization is suitable for high repetition-rate laser acceleration proton beams, which could be used as an injector for a conventional proton accelerator.

  12. Widely Tunable Mode-Hop-Free External-Cavity Quantum Cascade Laser (United States)

    Wysocki, Gerard; Curl, Robert F.; Tittel, Frank K.


    The external-cavity quantum cascade laser (EC-QCL) system is based on an optical configuration of the Littrow type. It is a room-temperature, continuous wave, widely tunable, mode-hop-free, mid-infrared, EC-QCL spectroscopic source. It has a single-mode tuning range of 155 cm(exp -1) (approximately equal to 8% of the center wavelength) with a maximum power of 11.1 mW and 182 cm(exp -1) (approximately equal to 15% of the center wavelength), and a maximum power of 50 mW as demonstrated for 5.3 micron and 8.4 micron EC-QCLs, respectively. This technology is particularly suitable for high-resolution spectroscopic applications, multi-species tracegas detection, and spectroscopic measurements of broadband absorbers. Wavelength tuning of EC-QCL spectroscopic source can be implemented by varying three independent parameters of the laser: (1) the optical length of the gain medium (which, in this case, is equivalent to QCL injection current modulation), (2) the length of the EC (which can be independently varied in the Rice EC-QCL setup), and (3) the angle of beam incidence at the diffraction grating (frequency tuning related directly to angular dispersion of the grating). All three mechanisms of frequency tuning have been demonstrated and are required to obtain a true mode-hop-free laser frequency tuning. The precise frequency tuning characteristics of the EC-QCL output have been characterized using a variety of diagnostic tools available at Rice University (e.g., a monochromator, FTIR spectrometer, and a Fabry-Perot spectrometer). Spectroscopic results were compared with available databases (such as HITRAN, PNNL, EPA, and NIST). These enable precision verification of complete spectral parameters of the EC-QCL, such as wavelength, tuning range, tuning characteristics, and line width. The output power of the EC-QCL is determined by the performance of the QC laser chip, its operating conditions, and parameters of the QC laser cavity such as mirror reflectivity or intracavity

  13. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography. (United States)

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul


    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  14. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback.

    Directory of Open Access Journals (Sweden)

    Boon Leong Lan

    Full Text Available Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation.

  15. Key Topics in Producing New Ultraviolet Led and Laser Devices Based on Transparent Semiconductor Zinc Oxide

    International Nuclear Information System (INIS)

    Tuezemen, S.


    Recently, it has been introduced that ZnO as II-VI semiconductor is promising various technological applications, especially for optoelectronic short wavelength light emitting devices due to its wide and direct band gap profile. The most important advantage of ZnO over the other currently used wide band gap semiconductors such as GaN is that its nearly 3 times higher exciton binding energy (60 meV), which permits efficient excitonic emission at room temperature and above. As-grown ZnO is normally n-type because of the Zn-rich defects such as zinc interstitials (Zn i ) oxygen vacancies (Vo), natively acting as shallow donors and main source of n-type conductivity in as-grown material. Therefore, making p-type ZnO has been more difficult due to unintentional compensation of possible acceptors by these residual donors. In order to develop electro luminescent and laser devices based on the ultraviolet (UV) exciton emission of ZnO, it will be important to fabricate good p-n junctions. Attempts to observe p-type conductivity in ours and our collaborators' laboratories in USA, either by co-doping with N or tuning O pressure have been first successful achievements, resulting in hole concentrations up to 10 1 9 cm - 3 in reactively sputtered thin layers of ZnO. Moreover, in order to produce ZnO based quantum well lasers similar to the previously introduced n-AlGaAs/GaAs/p-AlGaAs structures; we have attempted to grow Zn 1 -xSn x O thin films to enlarge the band gap energy. An increase up to 170 meV has been observed in Zn 1 -xSn x O thin films and this is enough barrier to be able to trap electron-hole pairs in quantum well structures. As a result, two important key issues; p-type conductivity and enhancement of the band gap energy in order to step forward towards the production of electro luminescent UV LEDs and quantum well lasers have been investigated and will be presented in this study

  16. Luminescent photonic crystal cavities for fiber-optic sensors, coupled dissimilar cavities and optofluidics (United States)

    Dündar, Mehmet A.; Wang, Bowen; Siahaan, Timothy; Voorbraak, Joost A. M.; Speijcken, Noud W. L.; Nötzel, Richard; van der Hoek, Marinus J.; He, Sailing; Fiore, Andrea; Van der Heijden, Rob W.


    Photonic crystal (PhC) cavities made in broadband luminescent material offer attractive possibilities for flexible active devices. The luminescence enables the cavity to operate as an autonomous entity. New applications of this property are demonstrated for cavities made in the InGaAsP underetched semiconductor membrane with embedded InAs Quantum Dots that emit in the range of 1400-1600 nm. Planar photonic crystal membrane nanocavities were released from the parent chip by mechanical nanomanipulation. The released cavity particle could be bonded on an arbitrary surface, which was exploited to make a novel fiber-optic tip sensor with a PhC cavity attached to the tip. A single mode from a short cavity is shown to couple simultaneously to at least three cavity modes of a long cavity, as concluded from level anticrossing data when the small cavity was photothermally tuned. Reconfigurable and movable cavities were created by locally varying the infiltration status by liquid oil near a PhC waveguide or defect cavity. Liquid was displaced locally on a micron scale using capillary force effects or laser-induced evaporation and condensation phenomena.

  17. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier (United States)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin


    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  18. Widely tunable eye-safe laser by a passively Q-switched photonic crystal fiber laser and an external-cavity optical parametric oscillator

    International Nuclear Information System (INIS)

    Chang, H L; Zhuang, W Z; Huang, W C; Huang, J Y; Huang, K F; Chen, Y F


    We report on a widely tunable passively Q-switched photonic crystal fiber (PCF) laser with wavelength tuning range up to 80 nm. The PCF laser utilizes an AlGaInAs quantum well/barrier structure as a saturable absorber and incorporates an external-cavity optical parametric oscillator (OPO) to achieve wavelength conversion. Under a pump power of 13.1 W at 976 nm, the PCF laser generated 1029-nm radiation with maximum output energy of 750 μJ and was incident into an external-cavity OPO. The output energy and peak power of signal wave was found to be 138 μJ and 19 kW, respectively. By tuning the temperature of nonlinear crystal, periodically poled lithium niobate (PPLN), in the OPO, the signal wavelength in eye-safe regime from 1513 to 1593 nm was obtained

  19. Production of superconducting 1.3-GHz cavities for the European X-ray Free Electron Laser (United States)

    Singer, W.; Brinkmann, A.; Brinkmann, R.; Iversen, J.; Matheisen, A.; Moeller, W.-D.; Navitski, A.; Reschke, D.; Schaffran, J.; Sulimov, A.; Walker, N.; Weise, H.; Michelato, P.; Monaco, L.; Pagani, C.; Wiencek, M.


    The production of over 800 1.3-GHz superconducting (SC) cavities for the European X-ray Free Electron Laser (EXFEL), the largest in the history of cavity fabrication, has now been successfully completed. In the past, manufacturing of SC resonators was only partly industrialized; the main challenge for the EXFEL production was transferring the high-performance surface treatment to industry. The production was shared by the two companies RI Research Instruments GmbH (RI) and Ettore Zanon S.p.A. (EZ) on the principle of "build to print". DESY provided the high-purity niobium and NbTi for the resonators. Conformity with the European Pressure Equipment Directive (PED) was developed together with the contracted notified body TUEV NORD. New or upgraded infrastructure has been established at both companies. Series production and delivery of fully-equipped cavities ready for cold rf testing was started in December 2012, and finished in December 2015. More than half the cavities delivered to DESY as specified (referred to "as received") fulfilled the EXFEL specification. Further improvement of low-performing cavities was achieved by supplementary surface treatment at DESY or at the companies. The final achieved average gradient exceeded the EXFEL specification by approximately 25%. In the following paper, experience with the 1.3-GHz cavity production for EXFEL is reported and the main lessons learned are discussed.

  20. Ultrasensitive, real-time analysis of biomarkers in breath using tunable external cavity laser and off-axis cavity-enhanced absorption spectroscopy. (United States)

    Bayrakli, Ismail; Akman, Hatice


    A robust biomedical sensor for ultrasensitive detection of biomarkers in breath based on a tunable external cavity laser (ECL) and an off-axis cavity-enhanced absorption spectroscopy (OA-CEAS) using an amplitude stabilizer is developed. A single-mode, narrow-linewidth, tunable ECL is demonstrated. A broadly coarse wavelength tuning range of 720 cm⁻¹ for the spectral range between 6890 and 6170 cm⁻¹ is achieved by rotating the diffraction grating forming a Littrow-type external-cavity configuration. A mode-hop-free tuning range of 1.85 cm⁻¹ is obtained. The linewidths below 140 kHz are recorded. The ECL is combined with an OA-CEAS to perform laser chemical sensing. Our system is able to detect any molecule in breath at concentrations to the ppbv range that have absorption lines in the spectral range between 1450 and 1620 nm. Ammonia is selected as target molecule to evaluate the performance of the sensor. Using the absorption line of ammonia at 6528.76 cm⁻¹, a minimum detectable absorption coefficient of approximately 1×10⁻⁸ cm⁻¹ is demonstrated for 256 averages. This is achieved for a 1.4-km absorption path length and a 2-s data-acquisition time. These results yield a detection sensitivity of approximately 8.6×10⁻¹⁰ cm⁻¹ Hz(-1/2). Ammonia in exhaled breath is analyzed and found in a concentration of 870 ppb for our example.

  1. Size-controlled one-pot synthesis of fluorescent cadmium sulfide semiconductor nanoparticles in an apoferritin cavity

    International Nuclear Information System (INIS)

    Iwahori, K; Yamashita, I


    A simple size-controlled synthesis of cadmium sulfide (CdS) nanoparticle (NP) cores in the cavity of apoferritin from horse spleen (HsAFr) was performed by a slow chemical reaction synthesis and a two-step synthesis protocol. We found that the CdS NP core synthesis was slow and that premature CdS NP cores were formed in the apoferritin cavity when the concentration of ammonia water was low. It was proven that the control of the ammonia water concentration can govern the CdS NP core synthesis and successfully produce size-controlled CdS NP cores with diameters from 4.7 to 7.1 nm with narrow size dispersion. X-ray powder diffraction (XRD), energy dispersive spectroscopy (EDS) analysis and high-resolution transmission electron microscopy (HR-TEM) observation characterized the CdS NP cores obtained as cubic polycrystalline NPs, which showed photoluminescence with red shifts depending on their diameters. From the research of CdS NP core synthesis in the recombinant apoferritins, the zeta potential of apoferritin is important for the biomineralization of CdS NP cores in the apoferritin cavity. These synthesized CdS NPs with different photoluminescence properties will be applicable in a wide variety of nano-applications.

  2. Single-frequency blue light generation by single-pass sum-frequency generation in a coupled ring cavity tapered laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael


    A generic approach for generation of tunable single frequency light is presented. 340 mW of near diffraction limited, single-frequency, and tunable blue light around 459 nm is generated by sum-frequency generation (SFG) between two tunable tapered diode lasers. One diode laser is operated in a ring...... cavity and another tapered diode laser is single-passed through a nonlinear crystal which is contained in the coupled ring cavity. Using this method, the single-pass conversion efficiency is more than 25%. In contrast to SFG in an external cavity, the system is entirely self-stabilized with no electronic...

  3. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji


    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  4. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.


    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance......Hz) the SSOA configuration can maintain a significantly higher bandwidth (~50% higher) compared to the MOPA architecture. Correspondingly narrower point spread functions can be generated in a Michelson interferometer....

  5. Development of a cw-laser-based cavity-ringdown sensor aboard a spacecraft for trace air constituents (United States)

    Awtry, A. R.; Miller, J. H.


    The progress in the development of a sensor for the detection of trace air constituents to monitor spacecraft air quality is reported. A continuous-wave (cw), external-cavity tunable diode laser centered at 1.55 micrometers is used to pump an optical cavity absorption cell in cw-cavity ringdown spectroscopy (cw-CRDS). Preliminary results are presented that demonstrate the sensitivity, selectivity and reproducibility of this method. Detection limits of 2.0 ppm for CO, 2.5 ppm for CO2, 1.8 ppm for H2O, 19.4 ppb for NH3, 7.9 ppb for HCN and 4.0 ppb for C2H2 are calculated.

  6. Monolithic integration of dual optical elements on high power semiconductor lasers (United States)

    Vaissie, Laurent

    This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform grating and a self-consistent model of the broad area active region. Improvement of the near-field intensity profile in good agreement with the FDTD model is demonstrated by varying the duty cycle from 20% to 55% and including the aspect ratio dependent etching (ARDE) for sub-micron features. The grating diffraction efficiency is estimated to be higher than 95% using a detailed analysis of the losses mechanisms of the device. The grating reflectivity is estimated to be as low as 2.10-4. The low reflectivity of the light extraction process is shown to increase the device efficiency and efficiently suppress lasing oscillations if both cleaved facets are replaced by grating couplers to produce 1.5W QCW with 11 nm bandwidth into a single spot a few mm above the device. Peak power in excess of 30W without visible COMD is achieved in this case. Having optimized, the light extraction process, we demonstrate the integration of three different optical functions on the substrate of the surface-emitting laser. First, a 40 level refractive microlens milled using focused ion beam shows a twofold reduction of the full-width half maximum 1mm above the device, showing potential for monolithic integration of coupling optics on the wafer. We then show that differential quantum efficiency of

  7. BRIEF COMMUNICATIONS: Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers (United States)

    Davydov, S. V.; Kulak, I. I.; Mit'kovets, A. I.; Stavrov, A. A.; Shkadarevich, A. P.; Yablonskiĭ, G. P.


    Lasing in crystals with narrow absorption bands was achieved for the first time by excitation with radiation emitted from electron-beam-pumped CdSxSe1-x semiconductor lasers. The lasing thresholds of YAG:Nd3+ and KGdW:Nd3+ crystals pumped with λ = 586 nm radiation were ~ 2 and ~ 1 mJ, respectively. The efficiency of conversion of the pump radiation into the output radiation in the KGdW:Nd3+ laser was 0.27%.

  8. Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Rapp, Ludovic, E-mail: [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Cibert, Christophe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nenon, Sebastien [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Alloncle, Anne Patricia [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nagel, Matthias [Empa, Swiss Federal Laboratories for Materials Testing and Reasearch, Laboratory for Functional Polymers, Uberlandstrasse 129, 8600 Duebendorf (Switzerland); Lippert, Thomas [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Videlot-Ackermann, Christine; Fages, Frederic [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Delaporte, Philippe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France)


    Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 {mu}s. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

  9. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri


    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

  10. Tunable laser applications

    CERN Document Server

    Duarte, FJ


    Introduction F. J. Duarte Spectroscopic Applications of Tunable Optical Parametric Oscillators B. J. Orr, R. T. White, and Y. He Solid-State Dye Lasers Costela, I. García-Moreno, and R. Sastre Tunable Lasers Based on Dye-Doped Polymer Gain Media Incorporating Homogeneous Distributions of Functional Nanoparticles F. J. Duarte and R. O. James Broadly Tunable External-Cavity Semiconductor Lasers F. J. Duarte Tunable Fiber Lasers T. M. Shay and F. J. Duarte Fiber Laser Overview and Medical Applications


    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM


    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  12. A modular architecture for multi-channel external cavity quantum cascade laser-based chemical sensors: a systems approach

    Energy Technology Data Exchange (ETDEWEB)

    Taubman, Matthew S.; Myers, Tanya L.; Bernacki, Bruce E.; Stahl, Robert D.; Cannon, Bret D.; Schiffern, John T.; Phillips, Mark C.


    A multi-channel laser-based chemical sensor platform is presented, in which a modular architecture allows the exchange of complete sensor channels without disruption to overall operation. Each sensor channel contains custom optical and electronics packages, which can be selected to access laser wavelengths, interaction path lengths and modulation techniques optimal for a given application or mission. Although intended primarily to accommodate mid-infrared (MIR) external cavity quantum cascade lasers (ECQCLs)and astigmatic Herriott cells, channels using visible or near infrared (NIR) lasers or other gas cell architectures can also be used, making this a truly versatile platform. Analog and digital resources have been carefully chosen to facilitate small footprint, rapid spectral scanning, ow-noise signal recovery, failsafe autonomous operation, and in-situ chemometric data analysis, storage and transmission. Results from the demonstration of a two-channel version of this platform are also presented.

  13. Transverse mode dynamics in vertical-cavity surface-emitting lasers: Spatiotemporal versus modal expansion descriptions

    International Nuclear Information System (INIS)

    Mulet, Josep; Balle, Salvador


    We discuss the range of validity of a modal description for the spatiotemporal dynamics of the optical field in vertical-cavity surface-emitting lasers. We focus on the secondary pulsations that appear during the turn-off transients when the injection current is modulated by a square-wave signal. We compare the results obtained with both a full spatiotemporal model [J. Mulet and S. Balle, IEEE J. Quantum. Electron. 38, 291 (2002)] and a modal expansion derived from this model. We find that the results obtained from the two descriptions agree for strong lateral guiding. However, for weak lateral guiding we find differences because the optical-field profile changes significantly due to spatial changes in the refractive index induced by the carrier density. The reason is that in the full spatiotemporal model a shrinkage of the mode profile occurs, which leads to an enhancement of the secondary pulsations. This effect is not included in the modal expansion, and it determines the limits of validity of such an approach for gain-guided devices

  14. Standoff detection of turbulent chemical mixture plumes using a swept external cavity quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, Mark C. [Pacific Northwest National Laboratory, Richland, Washington; Brumfield, Brian E. [Pacific Northwest National Laboratory, Richland, Washington


    We demonstrate standoff detection of turbulent mixed-chemical plumes using a broadly-tunable external cavity quantum cascade laser (ECQCL). The ECQCL was directed through plumes of mixed methanol/ethanol vapor to a partially-reflective surface located 10 m away. The reflected power was measured as the ECQCL was swept over its tuning range of 930-1065 cm-1 (9.4-10.8 µm) at rates up to 200 Hz. Analysis of the transmission spectra though the plume was performed to determine chemical concentrations with time resolution of 0.005 s. Comparison of multiple spectral sweep rates of 2 Hz, 20 Hz, and 200 Hz shows that higher sweep rates reduce effects of atmospheric and source turbulence, resulting in lower detection noise and more accurate measurement of the rapidly-changing chemical concentrations. Detection sensitivities of 0.13 ppm*m for MeOH and 1.2 ppm*m for EtOH are demonstrated for a 200 Hz spectral sweep rate, normalized to 1 s detection time.

  15. External cavity-quantum cascade laser (EC-QCL) spectroscopy for protein analysis in bovine milk. (United States)

    Kuligowski, Julia; Schwaighofer, Andreas; Alcaráz, Mirta Raquel; Quintás, Guillermo; Mayer, Helmut; Vento, Máximo; Lendl, Bernhard


    The analytical determination of bovine milk proteins is important in food and non-food industrial applications and yet, rather labour-intensive wet-chemical, low-throughput methods have been employed since decades. This work proposes the use of external cavity-quantum cascade laser (EC-QCL) spectroscopy for the simultaneous quantification of the most abundant bovine milk proteins and the total protein content based on the chemical information contained in mid-infrared (IR) spectral features of the amide I band. Mid-IR spectra of protein standard mixtures were used for building partial least squares (PLS) regression models. Protein concentrations in commercial bovine milk samples were calculated after chemometric compensation of the matrix contribution employing science-based calibration (SBC) without sample pre-processing. The use of EC-QCL spectroscopy together with advanced multivariate data analysis allowed the determination of casein, α-lactalbumin, β-lactoglobulin and total protein content within several minutes. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Fast quantification of bovine milk proteins employing external cavity-quantum cascade laser spectroscopy. (United States)

    Schwaighofer, Andreas; Kuligowski, Julia; Quintás, Guillermo; Mayer, Helmut K; Lendl, Bernhard


    Analysis of proteins in bovine milk is usually tackled by time-consuming analytical approaches involving wet-chemical, multi-step sample clean-up procedures. The use of external cavity-quantum cascade laser (EC-QCL) based IR spectroscopy was evaluated as an alternative screening tool for direct and simultaneous quantification of individual proteins (i.e. casein and β-lactoglobulin) and total protein content in commercial bovine milk samples. Mid-IR spectra of protein standard mixtures were used for building partial least squares (PLS) regression models. A sample set comprising different milk types (pasteurized; differently processed extended shelf life, ESL; ultra-high temperature, UHT) was analysed and results were compared to reference methods. Concentration values of the QCL-IR spectroscopy approach obtained within several minutes are in good agreement with reference methods involving multiple sample preparation steps. The potential application as a fast screening method for estimating the heat load applied to liquid milk is demonstrated. Copyright © 2018 Elsevier Ltd. All rights reserved.

  17. Preliminary tests of a pseudo spectral Fourier propagation code to be used for high gain laser cavity studies

    International Nuclear Information System (INIS)

    Agnesi, A.; Gabetta, G.; Flora, F.; Hermensent, T.; Reali, G.T.


    Numerical methods for simulation of loaded laser cavities are largely devoted to the dynamic evolution of the transverse field distribution. Results on transverse field profile evolution have been published using various numerical methods like finite-difference schemes, Gaussian mode expansion and spectral methods based on trigonometric polynomial mode expansion. The latter methods is particular advantageous because of the existence of very efficient algorithms such as Fast Fourier Transform (FFT). A similar approach is used to solve the field in unstable laser cavities with high gain active medium such as XeCl. The preliminary test presented here constitute the first attempt to optimize our numerical code for nonlinear behaviors such as self-focussing and bistability

  18. SIMCON 3.0 eight channel FPGA-based cavity simulator and controller for VUV free-electron laser (United States)

    Pozniak, Krzysztof T.; Czarski, Tomasz; Koprek, Waldemar; Romaniuk, Ryszard S.


    The work describes integrated system of hardware controller and simulator of superconductive cavity. The controller was realized on FPGA chip Xilinx-VirtexII-V4000. The solution uses DSP EMBEDDED BOARD positioned on a LLRF Modular Control Platform. The algorithm was realized in VHDL using hardware multiplication components existing in VirtexII series of chips. There was obtained implementation of a device working in real-time according to the control condition demands of LLRF system for TESLA superconductive cavities. The system is predicted as a developmental stage for FLASH accelerator and FEL laser and next for XFEL. The paper describes in detail functional layer, parameter programming, control basics for particular blocks, monitoring of real-time processes. There are presented results of system usage for control of the module ACC1 of FLASH laser.

  19. Continuous multispectral imaging of surface phonon polaritons on silicon carbide with an external cavity quantum cascade laser (United States)

    Dougakiuchi, Tatsuo; Kawada, Yoichi; Takebe, Gen


    We demonstrate the continuous multispectral imaging of surface phonon polaritons (SPhPs) on silicon carbide excited by an external cavity quantum cascade laser using scattering-type scanning near-field optical microscopy. The launched SPhPs were well characterized via the confirmation that the theoretical dispersion relation and measured in-plane wave vectors are in excellent agreement in the entire measurement range. The proposed scheme, which can excite and observe SPhPs with an arbitrary wavelength that effectively covers the spectral gap of CO2 lasers, is expected to be applicable for studies of near-field optics and for various applications based on SPhPs.

  20. Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser. (United States)

    Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas


    A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.