Delay induced high order locking effects in semiconductor lasers

Science.gov (United States)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

Energy Technology Data Exchange (ETDEWEB)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

2000-07-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Semiconductor micro cavities: half light, half matter

International Nuclear Information System (INIS)

Baumberg, Jeremy J.

2003-01-01

Quantum wells sandwiched tightly between two mirrors can be used to make a new type of laser that can amplify light more than any other known material. What do you get if you cross light with matter? It is a question that fascinates today's researchers in quantum optoelectronics, who want to see how far the physical states of the world can be intertwined. Although we have a good understanding of the quantum ingredients of optics and solids - photons and atoms - it turns out that assembling these building blocks in deliberately unfamiliar ways can lead to what is new and often quite unexpected behaviour. Consider 'quantum wells', which form the basis of modern semiconductor lasers. First developed in the 1980s, they lie at the heart of optical-communication and optical-storage technologies such as DVD players and they now have a global market of over 10bn British Pounds. Quantum wells consist of a thin sheet of crystalline semiconductor sandwiched between two sheets of another semiconductor. The outer layers squash the wavefunctions of electrons within the central sheet, increasing the electrons' energy and their interaction with light. Engineers can control the colour of the light emitted by the laser simply by adjusting the energy levels within the central sheet, which acts as a potential well. But this bug-sized playground for electrons has not just had technological ramifications. It has also spawned an enormous variety of new physics, including the quantum Hall effect, which can be used as a fundamental standard for measuring the ratio between the charge on the electron and the Planck constant. Over the last ten years researchers have also become increasingly keen to incorporate quantum wells into what are known as 'semiconductor micro cavities'. Physicists have found that these painstakingly layered materials can be used to create new quantum states that resemble superfluids and can be used in interferometric quantum devices. In the March issue of Physics

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

International Nuclear Information System (INIS)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

2000-01-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

Science.gov (United States)

Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

International Nuclear Information System (INIS)

Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

1989-01-01

Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

Science.gov (United States)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Bistable laser device with multiple coupled active vertical-cavity resonators

Science.gov (United States)

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-08-19

A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

Optical cavity furnace for semiconductor wafer processing

Science.gov (United States)

Sopori, Bhushan L.

2014-08-05

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

A compact chaotic laser device with a two-dimensional external cavity structure

International Nuclear Information System (INIS)

Sunada, Satoshi; Adachi, Masaaki; Fukushima, Takehiro; Shinohara, Susumu; Arai, Kenichi; Harayama, Takahisa

2014-01-01

We propose a compact chaotic laser device, which consists of a semiconductor laser and a two-dimensional (2D) external cavity for delayed optical feedback. The overall size of the device is within 230 μm × 1 mm. A long time delay sufficient for chaos generation can be achieved with the small area by the multiple reflections at the 2D cavity boundary, and the feedback strength is controlled by the injection current to the external cavity. We experimentally demonstrate that a variety of output properties, including chaotic output, can be selectively generated by controlling the injection current to the external cavity.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

Science.gov (United States)

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

Science.gov (United States)

Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

2016-03-01

We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

An ultra-long cavity passively mode-locked fiber laser based on nonlinear polarization rotation in a semiconductor optical amplifier

International Nuclear Information System (INIS)

Liu, Tonghui; Jia, Dongfang; Yang, Jingwen; Chen, Jiong; Wang, Zhaoying; Yang, Tianxin

2013-01-01

In this paper we investigate an ultra-long cavity passively mode-locked fiber laser based on a semiconductor optical amplifier (SOA). Experimental results are presented which indicate that stable mode-locked pulses can be obtained by combining nonlinear polarization rotation (NPR) in the SOA with a polarization controller. By adding a 4 km single mode fiber into the ring cavity, a stable fundamental-order mode-locked pulse train with a repetition rate of 50.72 kHz is generated through the NPR effect in the SOA. The central wavelength, 3 dB bandwidth and single pulse energy of the output pulse are 1543.95 nm, 1.506 nm and 33.12 nJ, respectively. Harmonic mode-locked pulses are also observed in experiments when the parameters are chosen properly. (paper)

Operational characteristics of dual gain single cavity Nd:YVO 4 laser

Indian Academy of Sciences (India)

Operational characteristics of a dual gain single cavity Nd:YVO4 laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be ...

Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity.

Science.gov (United States)

Choi, Daeyoung; Wishon, Michael J; Chang, C Y; Citrin, D S; Locquet, A

2018-01-01

We observe experimentally two regimes of intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity as the feedback level is increased. The first regime encountered corresponds to multistate intermittency involving two or three states composed of several combinations of periodic, quasiperiodic, and subharmonic dynamics. The second regime is observed for larger feedback levels and involves intermittency between period-doubled and chaotic regimes. This latter type of intermittency displays statistical properties similar to those of on-off intermittency.

Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

Directory of Open Access Journals (Sweden)

L. Li

2012-12-01

Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

A mode-locked external-cavity quantum-dot laser with a variable repetition rate

International Nuclear Information System (INIS)

Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

2013-01-01

A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

Energy Technology Data Exchange (ETDEWEB)

Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

2007-12-15

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

International Nuclear Information System (INIS)

Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

2007-01-01

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

Modeling and experimental verification of laser self-mixing interference phenomenon with the structure of two-external-cavity feedback

Science.gov (United States)

Chen, Peng; Liu, Yuwei; Gao, Bingkun; Jiang, Chunlei

2018-03-01

A semiconductor laser employed with two-external-cavity feedback structure for laser self-mixing interference (SMI) phenomenon is investigated and analyzed. The SMI model with two directions based on F-P cavity is deduced, and numerical simulation and experimental verification were conducted. Experimental results show that the SMI with the structure of two-external-cavity feedback under weak light feedback is similar to the sum of two SMIs.

A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

International Nuclear Information System (INIS)

Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng

2011-01-01

A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

International Nuclear Information System (INIS)

Cotta, E A; Matinaga, F M

2007-01-01

We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

Optical cavity cooling of mechanical modes of a semiconductor nanomembrane

DEFF Research Database (Denmark)

Usami, Koji; Naesby, A.; Bagci, Tolga

2012-01-01

Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high-quality-factor and......Mechanical oscillators can be optically cooled using a technique known as optical-cavity back-action. Cooling of composite metal–semiconductor mirrors, dielectric mirrors and dielectric membranes has been demonstrated. Here we report cavity cooling of mechanical modes in a high...

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Laser frequency modulator for modulating a laser cavity

Science.gov (United States)

Erbert, Gaylen V.

1992-01-01

The present invention relates to a laser frequency modulator for modulating a laser cavity. It is known in the prior art to utilize a PZT (piezoelectric transducer) element in combination with a mirror to change the cavity length of a laser cavity (which changes the laser frequency). Using a PZT element to drive the mirror directly is adequate at frequencies below 10 kHz. However, in high frequency applications (100 kHz and higher) PZT elements alone do not provide a sufficient change in the cavity length. The present invention utilizes an ultrasonic concentrator with a PZT element and mirror to provide modulation of the laser cavity. With an ultrasonic concentrator, the mirror element at the end of a laser cavity can move at larger amplitudes and higher frequencies.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

Science.gov (United States)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Strong Exciton-photon Coupling in Semiconductor Microcavities

DEFF Research Database (Denmark)

Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

1999-01-01

The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

Frequency response control of semiconductor laser by using hybrid modulation scheme.

Science.gov (United States)

Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

2016-10-31

A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

Science.gov (United States)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01

Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

Science.gov (United States)

Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

2018-02-01

This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

Science.gov (United States)

Lukowski, Michal L.

Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

Controlling spontaneous emission dynamics in semiconductor micro cavities

Science.gov (United States)

Gayral, B.

Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality in other words a long photon storage time are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed. L'émission spontanée de lumière peut être contrôlée, ainsi que nous l'enseigne l'électrodynamique quantique en cavité, ce fait a été démontré expérimentalement en physique atomique. En particulier, coupler un émetteur à un mode photonique résonnant d'une cavité peut exalter son taux d'émission spontanée : c'est l'effet Purcell. Bien qu'il semble très prometteur de mettre en pratique ces concepts pour améliorer les dispositifs semi-conducteurs émetteurs de lumière, le choix du système émetteur/cavité est crucial. Nous montrons que les boîtes quantiques semi-conductrices sont des bons candidats pour observer l'effet Purcell. Il faut par ailleurs des cavités de faible volume ayant une grande qualité optique en d'autres mots un long temps de

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Erbert, G.; Sumpf, B.

2010-01-01

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

International Nuclear Information System (INIS)

Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

2010-01-01

An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

Design and construct of a tunable semiconductor laser

Directory of Open Access Journals (Sweden)

J. Sabbaghzadeh

2000-06-01

Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2017-01-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

Micro-Cavity Fluidic Dye Laser

DEFF Research Database (Denmark)

Helbo, Bjarne; Kristensen, Anders; Menon, Aric Kumaran

2003-01-01

We have successfully designed, fabricated and characterized a micro-cavity fluidic dye laser with metallic mirrors, which can be integrated with polymer based lab-on-a-chip microsystems without further processing steps. A simple rate-equation model is used to predict the average pumping power...... threshold for lasing as function of cavity-mirror reflectance, laser dye concentration and cavity length. The laser device is characterized using the laser dye Rhodamine 6G dissolved in ethanol. Lasing is observed, and the influence of dye concentration is investigated....

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities.

Science.gov (United States)

Zhu, X; Cassidy, D T

1996-08-20

A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

International Nuclear Information System (INIS)

Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

2011-01-01

The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

Energy Technology Data Exchange (ETDEWEB)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Semiconductor lasers and herterojunction leds

CERN Document Server

Kressel, Henry

2012-01-01

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

DEFF Research Database (Denmark)

Champagne, A.; Lestrade, Michel; Camel, Jérôme

2004-01-01

The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

Decoherence in semiconductor cavity QED systems due to phonon couplings

DEFF Research Database (Denmark)

Nielsen, Per Kær; Mørk, Jesper

2014-01-01

We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...

The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

Science.gov (United States)

Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

2011-01-01

Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

International Nuclear Information System (INIS)

Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A

2006-01-01

A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)

Hybrid vertical cavity laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2010-01-01

A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

Emerging applications for vertical cavity surface emitting lasers

International Nuclear Information System (INIS)

Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

2011-01-01

Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Electrically Pumped Vertical-Cavity Amplifiers

DEFF Research Database (Denmark)

Greibe, Tine

2007-01-01

In this work, the design of electrically pumped vertical cavity semiconductor optical amplifiers (eVCAs) for use in a mode-locked external-cavity laser has been developed, investigated and analysed. Four different eVCAs, one top-emitting and three bottom emitting structures, have been designed...... and discussed. The thesis concludes with recommendations for further work towards the realisation of compact electrically pumped mode-locked vertical externalcavity surface emitting lasers....

Temperature controller of semiconductor laser

Czech Academy of Sciences Publication Activity Database

Matoušek, Vít; Číp, Ondřej

2003-01-01

Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Crystallization of Organic Semiconductor Molecules in Nanosized Cavities

DEFF Research Database (Denmark)

Milita, Silvia; Dionigi, Chiara; Borgatti, Francesco

2008-01-01

The crystallization of an organic semiconductor, viz., tetrahexil-sexithiophene (H4T6) molecules, confined into nanosized cavities of a self-organized polystyrene beads template, has been investigated by means of in situ grazing incidence X-ray diffraction measurements, during the solvent evapora...

Lasers with intra-cavity phase elements

Science.gov (United States)

Gulses, A. Alkan; Kurtz, Russell; Islas, Gabriel; Anisimov, Igor

2018-02-01

Conventional laser resonators yield multimodal output, especially at high powers and short cavity lengths. Since highorder modes exhibit large divergence, it is desirable to suppress them to improve laser quality. Traditionally, such modal discriminations can be achieved by simple apertures that provide absorptive loss for large diameter modes, while allowing the lower orders, such as the fundamental Gaussian, to pass through. However, modal discrimination may not be sufficient for short-cavity lasers, resulting in multimodal operation as well as power loss and overheating in the absorptive part of the aperture. In research to improve laser mode control with minimal energy loss, systematic experiments have been executed using phase-only elements. These were composed of an intra-cavity step function and a diffractive out-coupler made of a computer-generated hologram. The platform was a 15-cm long solid-state laser that employs a neodymium-doped yttrium orthovanadate crystal rod, producing 1064 nm multimodal laser output. The intra-cavity phase elements (PEs) were shown to be highly effective in obtaining beams with reduced M-squared values and increased output powers, yielding improved values of radiance. The utilization of more sophisticated diffractive elements is promising for more difficult laser systems.

Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

Science.gov (United States)

Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

2017-11-01

Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

Semiconductor laser using multimode interference principle

Science.gov (United States)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

Energy Technology Data Exchange (ETDEWEB)

Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)

1998-01-01

In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

Science.gov (United States)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

Science.gov (United States)

Kim, Jimyung; Delfyett, Peter J

2008-07-21

We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

Semiconductor Laser Multi-Spectral Sensing and Imaging

Directory of Open Access Journals (Sweden)

Han Q. Le

2010-01-01

Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Semiconductor laser multi-spectral sensing and imaging.

Science.gov (United States)

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Laser vapor phase deposition of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

1987-06-01

The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

Science.gov (United States)

Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

2014-01-01

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

Science.gov (United States)

Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

2018-02-01

A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

Science.gov (United States)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

International Nuclear Information System (INIS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-01-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

Science.gov (United States)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

Modelling colliding-pulse mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Bischoff, Svend

or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

Non-markovian effects in semiconductor cavity QED: Role of phonon-mediated processes

DEFF Research Database (Denmark)

Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from the pola......We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from...... the polaritonic quasi-particle nature of the carrier-photon system interacting with the phonon reservoir....

Metallic nano-cavity lasers at near infrared wavelengths

NARCIS (Netherlands)

Hill, M.T.; Stockman, M.I.

2009-01-01

There has been considerable interest in nano-cavity lasers, both from a scientific perspective for investigating fundamental properties of lasers and cavities, and also to produce smaller and better lasers for low-power applications. Light confinement on a wavelength scale has been reported in

Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

OpenAIRE

Linnik, M.; Christou, A.

2001-01-01

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

Science.gov (United States)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

Theory of semiconductor laser cooling

Science.gov (United States)

Rupper, Greg

Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

International Nuclear Information System (INIS)

Nakwaski, W.; Sarzał, R. P.

2016-01-01

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

CO2 laser pulse switching by optically excited semiconductors

International Nuclear Information System (INIS)

Silva, V.L. da.

1986-01-01

The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

DEFF Research Database (Denmark)

Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

2010-01-01

We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

The Modulation Response of a Semiconductor Laser Amplifier

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

1999-01-01

We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

Science.gov (United States)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

Science.gov (United States)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Vertical cavity laser

DEFF Research Database (Denmark)

2016-01-01

The present invention provides a vertical cavity laser comprising a grating layer comprising an in-plane grating, the grating layer having a first side and having a second side opposite the first side and comprising a contiguous core grating region having a grating structure, wherein an index...

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Towards filament free semiconductor lasers

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

2000-01-01

We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

Mathematical model governing laser-produced dental cavity

Science.gov (United States)

Yilbas, Bekir S.; Karatoy, M.; Yilbas, Z.; Karakas, Eyup S.; Bilge, A.; Ustunbas, Hasan B.; Ceyhan, O.

1990-06-01

Formation of dental cavity may be improved by using a laser beam. This provides nonmechanical contact, precise location of cavity, rapid processing and increased hygienity. Further examination of interaction mechanism is needed to improve the application of lasers in density. Present study examines the tenperature rise and thermal stress development in the enamel during Nd YAG laser irradiation. It is found that the stresses developed in the enamel is not sufficiently high enough to cause crack developed in the enamel.

Coupled Photonic Crystal Cavity Array Laser

DEFF Research Database (Denmark)

Schubert, Martin

in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality....... The results are in good agreement with standard coupled mode theory. Also a novel type of photonic crystal structure is proposed called lambda shifted cavity which is a twodimensional photonic crystal laser analog of a VCSEL laser. Detailed measurements of the coupled modes in the photonic crystals...... with quantum dots are carried out. In agreement with a simple gain model the structures do not show stimulated emission. The spectral splitting due to the coupling between single cavities as well as arrays of cavities is studied theoretically and experimentally. Lasing is observed for photonic crystal cavity...

Single-mode Brillouin fiber laser passively stabilized at resonance frequency with self-injection locked pump laser

International Nuclear Information System (INIS)

Spirin, V V; Lopez-Mercado, C A; Megret, P; Fotiadi, A A

2012-01-01

We demonstrate a single-mode Brillouin fiber ring laser, which is passively stabilized at pump resonance frequency by using self-injection locking of semiconductor pump laser. Resonance condition for Stokes radiation is achieved by length fitting of Brillouin laser cavity. The laser generate single-frequency Stokes wave with linewidth less than 0.5 kHz using approximately 17-m length cavity

Crisis route to chaos in semiconductor lasers subjected to external optical feedback

Science.gov (United States)

Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

2018-03-01

Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

International Nuclear Information System (INIS)

Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

2012-01-01

The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

Hybrid organic semiconductor lasers for bio-molecular sensing.

Science.gov (United States)

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges

International Nuclear Information System (INIS)

Korenev, V V; Savelyev, A V; Zhukov, A E; Maximov, M V

2015-01-01

The ways to optimize key parameters of active region and edge reflectivity of edge- emitting semiconductor quantum dot laser are provided. It is shown that in the case of optimal cavity length and sufficiently large dispersion lasing spectrum of a given width can be obtained at injection current up to an order of magnitude lower in comparison to non-optimized sample. The influence of internal loss and edge reflection is also studied in details. (paper)

Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges

Science.gov (United States)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Maximov, M. V.

2015-11-01

The ways to optimize key parameters of active region and edge reflectivity of edge- emitting semiconductor quantum dot laser are provided. It is shown that in the case of optimal cavity length and sufficiently large dispersion lasing spectrum of a given width can be obtained at injection current up to an order of magnitude lower in comparison to non-optimized sample. The influence of internal loss and edge reflection is also studied in details.

Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

Science.gov (United States)

Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

2009-05-25

We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

OpenAIRE

Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

2009-01-01

We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Science.gov (United States)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Metasurface external cavity laser

Energy Technology Data Exchange (ETDEWEB)

Xu, Luyao, E-mail: luyaoxu.ee@ucla.edu; Curwen, Christopher A.; Williams, Benjamin S. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States); Hon, Philip W. C.; Itoh, Tatsuo [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Chen, Qi-Sheng [Northrop Grumman Aerospace Systems, Redondo Beach, California 90278 (United States)

2015-11-30

A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antenna-coupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam properties. A near-Gaussian beam of 4.3° × 5.1° divergence is observed and an output power level >5 mW is achieved. The polarized response of the metasurface allows the use of a wire-grid polarizer as an output coupler that is continuously tunable.

Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

Energy Technology Data Exchange (ETDEWEB)

Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

2016-06-15

We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

Comparative study of the performance of semiconductor laser based coherent Doppler lidars

DEFF Research Database (Denmark)

Rodrigo, Peter John; Pedersen, Christian

2012-01-01

Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

2014-12-29

A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

Cavity-polariton interaction mediated by coherent acoustic phonons in semiconductor microcavities

DEFF Research Database (Denmark)

de Lima, Mauricio; Hey, Rudolf; Santos, Paul

The strong coupling between excitons in a quantum well (QW) and photons in a semiconductor microcavity leads to the formation of quasi-particles known as cavity-polaritons. In this contribution, we investigate their interaction with coherent acoustic phonons in the form of surface acoustic waves...

The features of modelling semiconductor lasers with a wide contact

Directory of Open Access Journals (Sweden)

Rzhanov Alexey

2017-01-01

Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

Direct solar pumping of semiconductor lasers: A feasibility study

Science.gov (United States)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

Reduced filamentation in high power semiconductor lasers

DEFF Research Database (Denmark)

Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

1999-01-01

High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

Intra-cavity decomposition of a dual-directional laser beam

CSIR Research Space (South Africa)

Naidoo, Darryl

2011-01-01

Full Text Available A method of decomposing a dual-directional laser beam into a forward propagating field and a backward propagating field for an apertured plano-concave cavity is presented. An intra-cavity aperture is a simple method of laser beam shaping as higher...

Semiconductor Laser Tracking Frequency Distance Gauge

Science.gov (United States)

Phillips, James D.; Reasenberg, Robert D.

2009-01-01

Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

Study on guided waves in semiconductor lasers

International Nuclear Information System (INIS)

Pudensi, M.A.A.

1980-01-01

In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

Management of gingival hyperpigmentation by semiconductor diode laser

Directory of Open Access Journals (Sweden)

Geeti Gupta

2011-01-01

Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

Development of semiconductor laser based Doppler lidars for wind-sensing applications

DEFF Research Database (Denmark)

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

2015-01-01

We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

DEFF Research Database (Denmark)

Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

2010-01-01

Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

High brightness semiconductor lasers with reduced filamentation

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

1999-01-01

High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

A laser-powered hydrokinetic system for caries removal and cavity preparation.

Science.gov (United States)

Hadley, J; Young, D A; Eversole, L R; Gornbein, J A

2000-06-01

Laser systems have been developed for the cutting of dental hard tissues. The erbium, chromium:yttrium-scandium-gallium-garnet, or Er,Cr:YSGG, laser system used in conjunction with an air-water spray has been shown to be efficacious in vitro for cavity preparation. The authors randomly selected subjects for cavity preparation with conventional air turbine/bur dental surgery or an Er,Cr:YSGG laser-powered system using a split-mouth design. They prepared Class I, III and V cavities, placed resin restorations and evaluated subjects on the day of the procedure and 30 days and six months postoperatively for pulp vitality, recurrent caries, pain and discomfort, and restoration retention. Sixty-seven subjects completed the study. There were no statistical differences between the two treatment groups for the parameters measured with one exception; there was a statistically significant decrease in discomfort levels for the laser system at the time of cavity preparation for subjects who declined to receive local anesthetic. The Er,Cr:YSGG laser system is effective for preparation of Class I, III and V cavities and resin restorations are retained by lased tooth surfaces. Hard-tissue cutting lasers are being introduced for use in operative dentistry. In this study, an Er,Cr:YSGG laser has been shown to be effective for cavity preparation and restoration replacement.

Toward continuous-wave operation of organic semiconductor lasers

Science.gov (United States)

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

High stable electro-optical cavity-dumped Nd:YAG laser

International Nuclear Information System (INIS)

Ma, Y F; Yu, X; Zhang, J W; Li, H

2012-01-01

In this paper, an electro-optical cavity-dumped 10 Hz Nd:Y 3 Al 5 O 12 (Nd:YAG) laser was demonstrated. We designed an optimized high stable concavo-convex cavity according to the thermal-insensitive theory that the cavity could be deep stable and be insensitive to the change of thermal lens of laser crystal when g 1 *g 2 = 1/2. The output pulse width was constant at 6.0±0.1 ns. The maximum output energy was 40 mJ. The laser had outstanding stability of output characteristics. The fluctuations of average output energy and divergence angle within 8 cycles were 1.24% and 0.06 mrad, respectively

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

2016-01-01

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

Return-map for semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

1999-01-01

It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

Anticipated chaos in a nonsymmetric coupled external-cavity-laser system

International Nuclear Information System (INIS)

Rees, Paul; Spencer, Paul S.; Pierce, Iestyn; Sivaprakasam, S.; Shore, K. Alan

2003-01-01

We explain how the anticipation of chaos in a coupled external cavity laser system described by Sivaprakasam, Shahverdiev, Spencer, and Shore [Phys. Rev. Lett. 87, 154101 (2001)] is obtained. We show that the external cavity induces the required symmetry breaking necessary for the existence of a time delay between the synchronized output of the two laser diodes. The inclusion of a detuning between the two lasers causes one laser to anticipate the chaotic dynamics of the other

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Optical double-locked semiconductor lasers

Science.gov (United States)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Single filament semiconductor laser

International Nuclear Information System (INIS)

Botez, D.

1980-01-01

A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

Manipulating the wavelength-drift of a Tm laser for resonance enhancement in an intra-cavity pumped Ho laser.

Science.gov (United States)

Huang, Haizhou; Huang, Jianhong; Liu, Huagang; Li, Jinhui; Lin, Zixiong; Ge, Yan; Dai, Shutao; Deng, Jing; Lin, Wenxiong

2018-03-05

We demonstrate an enhancement mechanism and thermal model for intra-cavity pumped lasers, where resonance enhancement in intra-cavity pumped Ho laser was achieved by manipulating the wavelength-drift nature of the Tm laser for the first time. Optical conversion efficiency of 37.5% from an absorbed 785 nm diode laser to a Ho laser was obtained with a maximum output power of 7.51 W at 2122 nm, which is comparable to the conversion efficiency in 1.9 μm LD pumped Ho lasers. Meanwhile, more severe thermal effects in the Ho-doped gain medium than the Tm-doped one at high power operation were verified based on the built thermal model. This work benefits the design or evaluation of intra-cavity pumped lasers, and the resonance enhancement originated from the difference in reabsorption loss between stark levels at the lasing manifolds of quasi-three-level rare-earth ions has great interest to improve the existing intra-cavity pumped lasers or explore novel lasers.

Semiconductor processing with excimer lasers

International Nuclear Information System (INIS)

Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

1983-01-01

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

Semiconductor laser technology for remote sensing experiments

Science.gov (United States)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Bistable output from a coupled-resonator vertical-cavity laser diode

International Nuclear Information System (INIS)

Fischer, A. J.; Choquette, K. D.; Chow, W. W.; Allerman, A. A.; Geib, K.

2000-01-01

We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits bistable behavior in the light output versus injection current. Large bistability regions over current ranges as wide as 18 mA have been observed with on/off contrast ratios of greater than 20 dB. The position and width of the bistability region can be varied by changing the bias to the top cavity. Switching between on and off states can be accomplished with changes as small as 250 μW to the electrical power applied to the top cavity. The bistable behavior is the response of the nonlinear susceptibility in the top cavity to the changes in the bottom intracavity laser intensity as the bottom cavity reaches the thermal rollover point

Integrated semiconductor twin-microdisk laser under mutually optical injection

Energy Technology Data Exchange (ETDEWEB)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

Driver circuit for pulse modulation of a semiconductor laser

International Nuclear Information System (INIS)

Ueki, A.

1975-01-01

A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

Modes in light wave propagating in semiconductor laser

Science.gov (United States)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

Science.gov (United States)

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Continuously tunable pulsed Ti:Sa laser self-seeded by an extended grating cavity

CERN Document Server

Li, Ruohong; Rothe, Sebastian; Teigelhöfer, Andrea; Mostamand, Maryam

2016-01-01

A continuously tunable titanium:sapphire (Ti:Sa) laser self-seeded by an extended grating cavity was demonstrated and characterized. By inserting a partially reflecting mirror inside the cavity of a classic single-cavity grating laser, two oscillators are created: a broadband power oscillator, and a narrowband oscillator with a prism beam expander and a diffraction grating in Littrow configuration. By coupling the grating cavity oscillation into the power oscillator, a power-enhanced narrow-linewidth laser oscillation is achieved. Compared to the classic grating laser, this simple modification significantly increases the laser output power without considerably broadening the linewidth. With most of the oscillating laser power confined inside the broadband power cavity and lower power incident onto the grating, the new configuration also allows higher pump power, which is typically limited by the thermal deformation of the grating coating at high oscillation power.

Diagnostic studies of molecular plasmas using mid-infrared semiconductor lasers

NARCIS (Netherlands)

Röpcke, J.; Welzel, S.; Lang, N.; Hempel, F.; Gatilova, L.; Guaitella, O.; Rousseau, A.; Davies, P.B.

2008-01-01

Within the last decade mid-infrared absorption spectroscopy between 3 and 20 µm, known as infrared laser absorption spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has

A study on the optical parts for a semiconductor laser module

Energy Technology Data Exchange (ETDEWEB)

Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

2014-11-15

A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

Theory of superfluorescence-laser crossover in a cavity QED system

Energy Technology Data Exchange (ETDEWEB)

Sezaki, Riku; Ishikawa, Akira; Kobayashi, Kiyoshi [University of Yamanashi, Department of Science for Advanced Materials, Kofu, Yamanashi (Japan); Miyajima, Kensuke [Tokyo University of Science, Department of Applied Physics, Tokyo (Japan)

2017-11-15

Coherent emissions of photons, originating from coherently-coupled polarizations, are created by laser and superfluorescence, but the mechanisms remain obscure to be fully explored in nanophotonics from the application viewpoint to coherent-light sources. In this paper, we present a comprehensive full quantum theory to clarify the crossover between laser and superfluorescence caused by the competition between stimulated and spontaneous emissions in a cavity QED system. As a result, in case of steady-state emission, we show the feasibility of coherent-light emission by superfluorescence different from laser, depending on the quality factor of a cavity QED system. In particular, the coherence generation due to superfluorescence occurs in a shorter timescale in a cavity QED systems with a lower Q factor than laser due to stimulated emission. This result suggests that superfluorescence can be applied to a novel coherent-light source by a mechanism greatly different from laser. (orig.)

Review on the dynamics of semiconductor nanowire lasers

Science.gov (United States)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2013-01-01

Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback....... The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

Ultrafast laser-semiconductor interactions

International Nuclear Information System (INIS)

Schile, L.A.

1996-01-01

Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

A compact narrow-linewidth laser with a low-Q monolithic cavity

International Nuclear Information System (INIS)

Peng, Yu

2013-01-01

We demonstrate an approach to narrowing the linewidth of a diode laser to around 15×10 3 Hz with a compact setup of confocal and parallel monolithic Fabry–Perot cavities (MFCs). Resonances of the confocal and parallel MFCs with low finesse are obtained. Diode lasers with optical feedback from confocal and parallel monolithic MFCs are demonstrated. The frequency could be tuned 80×10 6 Hz by changing the grating position of the external cavity diode laser based on the confocal MFC, and 100×10 6 Hz by tuning the temperature of the plane MFC over 0.02 ° C for the external cavity diode laser based on the parallel MFC. (paper)

Anomalous normal mode oscillations in semiconductor microcavities

Energy Technology Data Exchange (ETDEWEB)

Wang, H. [Univ. of Oregon, Eugene, OR (United States). Dept. of Physics; Hou, H.Q.; Hammons, B.E. [Sandia National Labs., Albuquerque, NM (United States)

1997-04-01

Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities.

Modeling bidirectionally coupled single-mode semiconductor lasers

International Nuclear Information System (INIS)

Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

2002-01-01

We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

A diode-pumped Tm:YAG laser with an elliptical cavity mode

International Nuclear Information System (INIS)

Lipnicki, E.; Dawes, J.M.; Browne, P.G.

2000-01-01

Full text: A cavity consisting of cylindrical mirrors/lenses resulting in an elliptical cavity mode is being applied to a 3-level laser; Tm:YAG which lases near 2μm. This arrangement allows the use of simple pump beam optics but also ensures efficient mode matching with good output beam quality. This cavity has been designed and modelled with experiments under way to explore the advantages of this laser design

Intra-laser-cavity microparticle sensing with a dual-wavelength distributed-feedback laser

NARCIS (Netherlands)

Bernhardi, Edward H.; van der Werf, Kees O; Hollink, Anton J F; Wörhoff, Kerstin; de Ridder, René M; Subramaniam, Vinod; Pollnau, Markus

An integrated intra-laser-cavity microparticle sensor based on a dual-wavelength distributed-feedback channel waveguide laser in ytterbium-doped amorphous aluminum oxide on a silicon substrate is demonstrated. Real-time detection and accurate size measurement of single micro-particles with diameters

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

2015-01-01

into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

Mode-locked Pr3+-doped silica fiber laser with an external cavity

DEFF Research Database (Denmark)

Shi, Yuan; Poulsen, Christian; Sejka, Milan

1994-01-01

We present a Pr3+-doped silica-based fiber laser mode-locked by using a linear external cavity with a vibrating mirror. Stable laser pulses with a FWHM of less than 44 ps, peak power greater than 9 W, and repetition rate up to 100 MHz are obtained. The pulse width versus cavity mismatch ΔL and pump...... power have been investigated. With a short piece of nonlinear fiber included in the external cavity, laser pulses of 45 ps have been measured...

Low-confinement high-power semiconductor lasers

NARCIS (Netherlands)

Buda, M.

1999-01-01

This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

Mathematical modeling of InGaAsP/InP diode laser

International Nuclear Information System (INIS)

Soukieh, M.; Hammadi, M.; Abdul Ghani, B.

2009-01-01

A mathematical model describing the dynamic emission of InGaAsP/InP semiconductor laser has been developed. This model considers the differential gain, gain at free running condition, spontaneous, bimolecular recombination, Auger and Shockley-Hall-Read (SHR) recombination processes and variation of the internal cavity losses. The model allows investigating the impact of the input laser parameters (injection current, internal cavity losses, Auger and SHR recombination coefficients and spontaneous coupling factor) on the output semiconductor double heterostructure laser pulse characteristics. The numerical calculations show that, the output photon density, pulse width, delay time and the pulse duration are affected by variation the values of the injected current, Auger recombination coefficient, spontaneous coupling factors and by the internal cavity losses. The temporal behavior of the internal cavity losses is also estimated. The calculated results are in very good agreement with the experimental results reported in the literature. (author)

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

E-beam-pumped semiconductor lasers

Science.gov (United States)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

Science.gov (United States)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Synchronization scenario of two distant mutually coupled semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mirasso, Claudio; Heil, Tilmann

2004-01-01

We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

V-shaped resonators for addition of broad-area laser diode arrays

Science.gov (United States)

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Modeling of Coupled Nano-Cavity Lasers

DEFF Research Database (Denmark)

Skovgård, Troels Suhr

-of-states and it is argued that Purcell enhancement should also be included in stimulated recombination term, contrary to the common practice in the literature. It is shown that for quantum well devices, the Purcell enhancement is effectively independent of the cavity quality factor due to the broad electronic density......-of-states relative to the optical density-of-states. The low effective Purcell eect for quantum well devices limits the highest possible modulation bandwidth to a few tens of gigahertz, which is comparable to the performance of conventional diode lasers. Compared to quantum well devices, quantum dot devices have...... is useful for design of coupled systems. A tight-binding description for coupled nanocavity lasers is developed and employed to investigate the phase-locking behavior for the system of two coupled cavities. Phase-locking is found to be critically dependent on exact parameter values and to be dicult...

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Tunable laser applications

CERN Document Server

Duarte, FJ

2008-01-01

Introduction F. J. Duarte Spectroscopic Applications of Tunable Optical Parametric Oscillators B. J. Orr, R. T. White, and Y. He Solid-State Dye Lasers Costela, I. García-Moreno, and R. Sastre Tunable Lasers Based on Dye-Doped Polymer Gain Media Incorporating Homogeneous Distributions of Functional Nanoparticles F. J. Duarte and R. O. James Broadly Tunable External-Cavity Semiconductor Lasers F. J. Duarte Tunable Fiber Lasers T. M. Shay and F. J. Duarte Fiber Laser Overview and Medical Applications

All-metal coupling and package of semiconductor laser and amplifier with optical fiber

International Nuclear Information System (INIS)

Xu Fenglan; Li Lina; Zhang Yueqing

1992-01-01

The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

Anisotropic optical feedback of single frequency intra-cavity He–Ne laser

International Nuclear Information System (INIS)

Lu-Fei, Zhou; Shu-Lian, Zhang; Yi-Dong, Tan; Wei-Xin, Liu; Bin, Zhang

2009-01-01

This paper presents the anisotropic optical feedback of a single frequency intra-cavity He–Ne laser. A novel phenomenon was discovered that the laser output an elliptical polarized frequency instead of the initial linear polarized one. Two intensities with a phase difference were detected, both of which were modulated in the form of cosine wave and a fringe shift corresponds to a λ/2 movement of the feedback mirror. The phase difference can be continuously modulated by the wave plate in the external cavity. Frequency stabilization was used to stabilize the laser frequency so as to enlarge the measuring range and improve the measurement precision. This anisotropic optical feedback system offers a potential displacement measurement technology with the function of subdivision of λ/2 and in-time direction judgment. The three-mirror Fabry–Perot cavity model is used to present the experimental results. Given the lack of need of lasing adjustment, this full intra-cavity laser can significantly improve the simplicity and stability of the optical feedback system. (fluids, plasmas and electric discharges)

MBE System for Antimonide Based Semiconductor Lasers

National Research Council Canada - National Science Library

Lester, Luke

1999-01-01

.... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

Compact and highly efficient laser pump cavity

Science.gov (United States)

Chang, Jim J.; Bass, Isaac L.; Zapata, Luis E.

1999-01-01

A new, compact, side-pumped laser pump cavity design which uses non-conventional optics for injection of laser-diode light into a laser pump chamber includes a plurality of elongated light concentration channels. In one embodiment, the light concentration channels are compound parabolic concentrators (CPC) which have very small exit apertures so that light will not escape from the pumping chamber and will be multiply reflected through the laser rod. This new design effectively traps the pump radiation inside the pump chamber that encloses the laser rod. It enables more uniform laser pumping and highly effective recycle of pump radiation, leading to significantly improved laser performance. This new design also effectively widens the acceptable radiation wavelength of the diodes, resulting in a more reliable laser performance with lower cost.

High Power Mid-IR Semiconductor Lasers for LADAR

National Research Council Canada - National Science Library

Lester, Luke

2003-01-01

The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

Energy Technology Data Exchange (ETDEWEB)

Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

2015-08-15

A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

Tunable high-power narrow-linewidth green external-cavity GaN diode laser

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

Science.gov (United States)

Jiménez, A.; Milde, T.; Staacke, N.; Aßmann, C.; Carpintero, G.; Sacher, J.

2017-07-01

Narrow-linewidth tunable diode lasers are an important tool for spectroscopic instrumentation. Conventional external cavity diode lasers offer high output power and narrow linewidth. However, most external cavity diode lasers are designed as laboratory instrument and do not allow portability. In comparison, other commonly used lasers, like distributed feedback lasers (DFB) that are capable of driving a handheld device, are limited in power and show linewidths which are not sufficiently narrow for certain applications. We present new miniaturized types of tunable external cavity diode laser which overcome the drawbacks of conventional external cavity diode lasers and which preserve the advantages of this laser concept. Three different configurations are discussed in this article. The three types of miniaturized external cavity diode laser systems achieve power values of more than 50 mW within the 1.4 μm water vapor absorption band with excellent side-mode suppression and linewidth below 100 kHz. Typical features outstand with respect to other type of laser systems which are of extended use such as DFB laser diodes. The higher output power and the lower linewidth will enable a higher sensitivity and resolution for a wide range of applications.

A semiconductor nanowire Josephson junction microwave laser

Science.gov (United States)

Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

Laser interferometric method for determining the carrier diffusion length in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

2015-09-15

A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

Dilute nitride vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

2003-01-01

A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

2013-01-01

Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

Construction and characterization of external cavity diode lasers for atomic physics.

Science.gov (United States)

Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

2014-04-24

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

Birefringence Optical Feedback with a Folded Cavity in HeNe Laser

International Nuclear Information System (INIS)

Wu Yun; Tan Yi-Dong

2013-01-01

The birefringence optical feedback with a folded cavity in HeNe laser is investigated. A theory model based on the equivalent cavity of the Fabry—Perot interferometer is presented. The phase difference between the two intensities in birefringence feedback is twice the retardation of the wave plate. The phase difference is invariable when the length of the feedback cavity changes. With the adoption of a cube corner prism (CCP) to form a folded cavity, the fringe frequency is doubled, and the resolution of the displacement sensor based on birefringence optical feedback with a folded cavity is improved. A resistance chain of 5-fold subdivision and 4-fold logic subdivision is used as further subdivision. The resolution of λ/80 is obtained eventually; for 632.8 nm HeNe laser it is 7.91 nm. The displacement sensor based on birefringence optical feedback with a folded cavity is simple and of high resolution, large measurement range, low cost, and is of great application potential in industry

A single-frequency, ring cavity Tm-doped fiber laser based on a CMFBG filter

International Nuclear Information System (INIS)

Li, Qi; Yan, Fengping; Peng, Wanjing; Liu, Shuo; Feng, Ting; Tan, Siyu; Liu, Peng

2013-01-01

A single-frequency (SF), continuous-wave (CW), ring cavity Tm-doped fiber laser has been proposed and demonstrated. A chirped moiré fiber grating (CMFBG) was used as an ultra-narrow filter in the laser cavity to ensure SF operation. When the launched pump power was fixed at 2 W, this proposed laser was in stable operation with a central wavelength, optical signal-to-noise ratio, and full width at half maximum of 1942.8140 nm, 47 dB, and 0.0522 nm, respectively, with a resolution of 0.05 nm. The maximum output power of this laser is 95 mW, a higher output power is restricted by the optical circulator that is used in the cavity. The SF operation of this laser was confirmed by the self-homodyne method. To the best of the authors’ knowledge, this is the first report on an SF, CW, ring cavity Tm-doped fiber laser with a CMFBG filter. (letter)

Storage of laser pulses in a Fabry-Perot optical cavity for high flux x-ray

International Nuclear Information System (INIS)

Takezawa, K.; Honda, Y.; Sasao, N.; Araki, S.; Higashi, Y.; Taniguchi, T.; Urakawa, J.; Nomura, M.; Sakai, H.

2004-01-01

We have a plan to produce a high flux x-ray for medical use by using a Fabry-Perot optical cavity in which the lower pulses from a mode-locked laser are stored and enhanced. In this plan, the X-ray is produced from the Compton scattering of electrons in a storage ring with the laser light in the optical cavity. In order to increase X-ray flux, high power laser light is necessary. We show the enhancement of the laser power from the model locked laser with a Fabry-Perot optical cavity. (author)

Development of the power control system for semiconductor lasers

International Nuclear Information System (INIS)

Kim, Kwang Suk; Kim, Cheol Jung

1997-12-01

For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

Observing mode propagation inside a laser cavity

CSIR Research Space (South Africa)

Naidoo, Darryl

2012-05-01

Full Text Available components, to study the forward and backward propagating waves everywhere inside a laser cavity. We verify the previous theoretical-only prediction that the two fields may differ substantially in their amplitude profile, even for stable resonator systems, a...

Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

International Nuclear Information System (INIS)

Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long

2012-01-01

Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

2010-01-01

A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

International Nuclear Information System (INIS)

Minaev, V P

2005-01-01

High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

Mode locking of Yb:GdYAG ceramic lasers with an isotropic cavity

International Nuclear Information System (INIS)

Xu, C W; Tang, D Y; Zhu, H Y; Zhang, J

2013-01-01

We report on the passive mode locking of a diode pumped Yb:GdYAG ceramic laser with a near isotropic cavity. It is found that the laser could simultaneously mode lock in the two orthogonal principal polarization directions of the cavity, and the mode locked pulses of the two polarizations have identical features and are temporally perfectly synchronized. However, their pulse energy varies out-of-phase periodically, manifesting the antiphase dynamics of mode locked lasers. (letter)

On increasing the efficiency of a streamer semiconductor laser

International Nuclear Information System (INIS)

Rusakov, K I; Parashchuk, V V

2007-01-01

The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa 2 S 4 and Eu:Ca 4 Ga 2 S 7 materials. (lasers)

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Science.gov (United States)

Hardman, Kyle S.; Bennetts, Shayne; Debs, John E.; Kuhn, Carlos C. N.; McDonald, Gordon D.; Robins, Nick

2014-01-01

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included. PMID:24796259

Split-disk micro-lasers: Tunable whispering gallery mode cavities

Directory of Open Access Journals (Sweden)

T. Siegle

2017-09-01

Full Text Available Optical micro-cavities of various types have emerged as promising photonic structures, for both the investigation of fundamental science in cavity quantum electrodynamics and simultaneously for various applications, e.g., lasers, filters, or modulators. In either branch a demand for adjustable and tunable photonic devices becomes apparent, which has been mainly based on the modification of the refractive index of the micro-resonators so far. In this paper, we report on a novel type of whispering gallery mode resonator where resonance tuning is achieved by modification of the configuration. This is realized by polymeric split-disks consisting of opposing half-disks with an intermediate air gap. Functionality of the split-disk concept and its figures of merit like low-threshold lasing are demonstrated for laser dye-doped split-disks fabricated by electron beam lithography on Si substrates. Reversible resonance tuning is achieved for split-disks structured onto elastomeric substrates by direct laser writing. The gap width and hence the resonance wavelength can be well-controlled by mechanically stretching the elastomer and exploiting the lateral shrinkage of the substrate. We demonstrate a broad spectral tunability of laser modes by more than three times the free spectral range. These cavities have the potential to form a key element of flexible and tunable photonic circuits based on polymers.

Lambda shifted photonic crystal cavity laser

DEFF Research Database (Denmark)

Schubert, Martin; Skovgård, Troels Suhr; Ek, Sara

2010-01-01

We propose and demonstrate an alternative type of photonic crystal laser design that shifts all the holes in the lattice by a fixed fraction of the targeted emission wavelength. The structures are realized in InGaAsP =1.15 with InGaAsP quantum wells =1.52 as gain material. Cavities with shifts of...

Probing different regimes of strong field light-matter interaction with semiconductor quantum dots and few cavity photons

Science.gov (United States)

Hargart, F.; Roy-Choudhury, K.; John, T.; Portalupi, S. L.; Schneider, C.; Höfling, S.; Kamp, M.; Hughes, S.; Michler, P.

2016-12-01

In this work we present an extensive experimental and theoretical investigation of different regimes of strong field light-matter interaction for cavity-driven quantum dot (QD) cavity systems. The electric field enhancement inside a high-Q micropillar cavity facilitates exceptionally strong interaction with few cavity photons, enabling the simultaneous investigation for a wide range of QD-laser detuning. In case of a resonant drive, the formation of dressed states and a Mollow triplet sideband splitting of up to 45 μeV is measured for a mean cavity photon number ≤slant 1. In the asymptotic limit of the linear AC Stark effect we systematically investigate the power and detuning dependence of more than 400 QDs. Some QD-cavity systems exhibit an unexpected anomalous Stark shift, which can be explained by an extended dressed 4-level QD model. We provide a detailed analysis of the QD-cavity systems properties enabling this novel effect. The experimental results are successfully reproduced using a polaron master equation approach for the QD-cavity system, which includes the driving laser field, exciton-cavity and exciton-phonon interactions.

Noise-cancelled, cavity-enhanced saturation laser spectroscopy for laser frequency stabilisation

International Nuclear Information System (INIS)

Vine, Glenn de; McClelland, David E; Gray, Malcolm B

2006-01-01

We employ a relatively simple experimental technique enabling mechanical-noise free, cavityenhanced spectroscopic measurements of an atomic transition and its hyperfine structure. We demonstrate this technique with the 532 nm frequency doubled output from a Nd:YAG laser and an iodine vapour cell. The resulting cavity-enhanced, noise-cancelled, iodine hyperfine error signal is used as a frequency reference with which we stabilise the frequency of the 1064nm Nd:YAG laser. Preliminary frequency stabilisation results are then presented

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

Directory of Open Access Journals (Sweden)

Paolo Bardella

2016-01-01

Full Text Available In the last few decades, various solutions have been proposed to increase the modulation bandwidth and, consequently, the transmission bit-rate of semiconductor lasers. In this manuscript, we discuss a design procedure for a recently proposed laser cavity realized with the monolithic integration of two distributed Bragg reflector (DBR lasers allowing one to extend the modulation bandwidth. Such an extension is obtained introducing in the dynamic response a photon-photon resonance (PPR at a frequency higher than the modulation bandwidth of the corresponding single-section laser. Design guidelines will be proposed, and dynamic small and large signal simulations results, calculated using a finite difference traveling wave (FDTW numerical simulator, will be discussed to confirm the design results. The effectiveness of the design procedure is verified in a structure with PPR frequency at 35 GHz allowing one to obtain an open eye diagram for a non-return-to-zero (NRZ digital signal up to 80 GHz . Furthermore, the investigation of the rich dynamics of this structure shows that with proper bias conditions, it is possible to obtain also a tunable self-pulsating signal in a frequency range related to the PPR design.

High-efficiency cavity-dumped micro-chip Yb:YAG laser

Science.gov (United States)

Nishio, M.; Maruko, A.; Inoue, M.; Takama, M.; Matsubara, S.; Okunishi, H.; Kato, K.; Kyomoto, K.; Yoshida, T.; Shimabayashi, K.; Morioka, M.; Inayoshi, S.; Yamagata, S.; Kawato, S.

2014-09-01

High-efficiency cavity-dumped ytterbium-doped yttrium aluminum garnet (Yb:YAG) laser was developed. Although the high quantum efficiency of ytterbium-doped laser materials is appropriate for high-efficiency laser oscillation, the efficiency is decreased by their quasi-three/four laser natures. High gain operation by high intensity pumping is suitable for high efficiency oscillation on the quasi-three/four lasers without extremely low temperature cooling. In our group, highest efficiency oscillations for continuous wave, nanosecond to picosecond pulse lasers were achieved at room temperature by the high gain operation in which pump intensities were beyond 100 kW/cm2.

Interacting collective modes in a laser cavity

International Nuclear Information System (INIS)

Graca, E.L.; Brito, A.L. de; Baseia, B.

1985-01-01

Collective operators are defined for the quantized radiation field in a one-dimensional laser cavity coupled to a semi-infinite outside region and the overlaps of neighbouring collective modes are considered to show how they modify, in the linear appoximation, the time evolution of the radiation field below threshold. The model and procedure work directly within a continuous spectrum of modes and allow us to get an improved insight on the prescription for the laser field in single-mode operation. (Author) [pt

A semiconductor laser device

Energy Technology Data Exchange (ETDEWEB)

Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

1984-03-17

A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

Dynamics of bad-cavity-enhanced interaction with cold Sr atoms for laser stabilization

DEFF Research Database (Denmark)

Schäffer, S. A.; Christensen, B. T.R.; Henriksen, M. R.

2017-01-01

Hybrid systems of cold atoms and optical cavities are promising systems for increasing the stability of laser oscillators used in quantum metrology and atomic clocks. In this paper we map out the atom-cavity dynamics in such a system and demonstrate limitations as well as robustness of the approach....... We investigate the phase response of an ensemble of cold Sr88 atoms inside an optical cavity for use as an error signal in laser frequency stabilization. With this system we realize a regime where the high atomic phase shift limits the dynamical locking range. The limitation is caused by the cavity...

Porous photonic crystal external cavity laser biosensor

Energy Technology Data Exchange (ETDEWEB)

Huang, Qinglan [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Peh, Jessie; Hergenrother, Paul J. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Cunningham, Brian T. [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Department of Bioengineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

2016-08-15

We report the design, fabrication, and testing of a photonic crystal (PC) biosensor structure that incorporates a porous high refractive index TiO{sub 2} dielectric film that enables immobilization of capture proteins within an enhanced surface-area volume that spatially overlaps with the regions of resonant electromagnetic fields where biomolecular binding can produce the greatest shifts in photonic crystal resonant wavelength. Despite the nanoscale porosity of the sensor structure, the PC slab exhibits narrowband and high efficiency resonant reflection, enabling the structure to serve as a wavelength-tunable element of an external cavity laser. In the context of sensing small molecule interactions with much larger immobilized proteins, we demonstrate that the porous structure provides 3.7× larger biosensor signals than an equivalent nonporous structure, while the external cavity laser (ECL) detection method provides capability for sensing picometer-scale shifts in the PC resonant wavelength caused by small molecule binding. The porous ECL achieves a record high figure of merit for label-free optical biosensors.

Microencapsulation of silicon cavities using a pulsed excimer laser

KAUST Repository

Sedky, Sherif M.

2012-06-07

This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the proposed technique uses short excimer laser pulses (24ns), focused onto an area of 23mm 2, to locally heat the top few microns of the substrate, while the bulk substrate remains near ambient temperature. The treatment can be applied to selected regions of the substrate, without the need for special surface treatments or a controlled environment. This work investigates the effect of varying the laser pulse energy from 400 mJ cm 2to 800 mJ cm 2, the pulse rate from 1Hz to 50Hz and the pulse count from 200 to 3000 pulses on sealing microfabricated cavities in silicon. An analytical model for the effect of holes on the surface temperature distribution is derived, which shows that much higher temperatures can be achieved by increasing the hole density. A mechanism for sealing the cavities is proposed, which indicates how complete sealing is feasible. © 2012 IOP Publishing Ltd.

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

Semiconductor Mode-Locked Lasers for Optical Communication Systems

DEFF Research Database (Denmark)

Yvind, Kresten

2003-01-01

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

Purcell effect in an organic-inorganic halide perovskite semiconductor microcavity system

International Nuclear Information System (INIS)

Wang, Jun; Wang, Yafeng; Hu, Tao; Wu, Lin; Shen, Xuechu; Chen, Zhanghai; Cao, Runan; Xu, Fei; Da, Peimei; Zheng, Gengfeng; Lu, Jian

2016-01-01

Organic-inorganic halide perovskite semiconductors with the attractive physics properties, including strong photoluminescence (PL), huge oscillator strengths, and low nonradiative recombination losses, are ideal candidates for studying the light-matter interaction in nanostructures. Here, we demonstrate the coupling of the exciton state and the cavity mode in the lead halide perovskite microcavity system at room temperature. The Purcell effect in the coupling system is clearly observed by using angle-resolved photoluminescence spectra. Kinetic analysis based on time-resolved PL reveals that the spontaneous emission rate of the halide perovskite semiconductor is significantly enhanced at resonance of the exciton energy and the cavity mode. Our results provide the way for developing electrically driven organic polariton lasers, optical devices, and on-chip coherent quantum light sources

Selection of transverse modes in laser cavities containing waveguides and open parts

International Nuclear Information System (INIS)

Gurin, O V; Degtyarev, A V; Maslov, Vyacheslav A; Svich, V A; Tkachenko, V M; Topkov, A N

2001-01-01

The transverse modes of a submillimetre laser cavity that contains waveguides and open parts were studied theoretically and experimentally with the purpose of finding methods for mode selection. Two methods based on the filtering of the Fourier spectra of the waveguide modes and the use of their interference were substantiated numerically and realised in experiment. Special attention was paid to the mode selection in tunable lasers. Scaling laws allowing one to use the obtained results in a wide range of the cavity parameters and wavelengths are presented. (laser applications and other topics in quantum electronics)

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

Science.gov (United States)

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

CERN Document Server

Yamada, Minoru

2014-01-01

This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

Dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2014-01-01

The temporal dynamics of a broad-area diode laser with lateral-mode-selected long-cavity feedback is studied experimentally. Different dynamics are observed when different lateral modes are selected. When the feedback mirror is aligned perfectly and high-order modes are selected, in most....... When the feedback mirror is aligned non-perfectly, pulse-package oscillation is observed, for the first time to our knowledge, in a diode laser with long-cavity feedback....... of the cases, the output of the laser shows a periodic oscillation corresponding to a single roundtrip external-cavity loop, but the dynamic behavior disappears in some case; when the zero-order lateral-mode is selected, periodic oscillation corresponding to a double roundtrip external-cavity loop is observed...

Q-switched operation with Fox-Smith-Michelson laser cavity

International Nuclear Information System (INIS)

Huang, X; Huang, L; Gong, M

2008-01-01

A new kind of three-mirror composite cavity, Fox-Smith-Michelson cavity has been configured. This laser cavity is capable of high power output, owing to the low threshold of Michelson cavity. Also, thanks to the mode selection function of Fox-Smith cavity, stable pulses at high repetition rate can be generated. In our experiment, 15.54 W CW output at 1064 nm has been achieved, with an optic-to-optic conversion efficiency of 42.2%. At the Q-switching repetition rate of 100 kHz, the average output power is 11.92 W, with an optic-to-optic conversion efficiency of 38.2%. For Q-switching frequency from 30 kHz to 100 kHz, the pulse width variation is below 4.4% and the amplitude variation is below 4.8%

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

Science.gov (United States)

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

Efficient 525 nm laser generation in single or double resonant cavity

Science.gov (United States)

Liu, Shilong; Han, Zhenhai; Liu, Shikai; Li, Yinhai; Zhou, Zhiyuan; Shi, Baosen

2018-03-01

This paper reports the results of a study into highly efficient sum frequency generation from 792 and 1556 nm wavelength light to 525 nm wavelength light using either a single or double resonant ring cavity based on a periodically poled potassium titanyl phosphate crystal (PPKTP). By optimizing the cavity's parameters, the maximum power achieved for the resultant 525 nm laser was 263 and 373 mW for the single and double resonant cavity, respectively. The corresponding quantum conversion efficiencies were 8 and 77% for converting 1556 nm photons to 525 nm photons with the single and double resonant cavity, respectively. The measured intra-cavity single pass conversion efficiency for both configurations was about 5%. The performances of the sum frequency generation in these two configurations was studied and compared in detail. This work will provide guidelines for optimizing the generation of sum frequency generated laser light for a variety of configurations. The high conversion efficiency achieved in this work will help pave the way for frequency up-conversion of non-classical quantum states, such as the squeezed vacuum and single photon states. The proposed green laser source will be used in our future experiments, which includes a plan to generate two-color entangled photon pairs and achieve the frequency down-conversion of single photons carrying orbital angular momentum.

Coherent stacking of picosecond laser pulses in a high-Q optical cavity for accelerator applications

International Nuclear Information System (INIS)

Androsov, V.P.; Karnaukhov, I.M.; Telegin, Yu.N.

2007-01-01

We have performed the harmonic analysis of the steady-state coherent pulse-stacking process in a high-Q Fabry-Perot cavity. The expression for the stacked pulse shape is obtained as a function of both the laser cavity and pulse-stacking cavity parameters. We have also estimated the pulse power gains attainable in the laser-optical system of NESTOR storage ring, which is under development at Kharkov Institute of Physics and Technology. It is shown that high power gains (∼10 4 ) can be, in principle, achieved in a cavity, formed with low-absorption, high reflectivity (R ∼ 0.9999) mirrors, if the laser cavity length will differ exactly by half wavelength from the pulse-stacking cavity length. It implies development of the sophisticated frequency stabilization loop for maintaining the cavity length constant within a sub-nanometer range. At the same time, power gains of ∼10 3 can be obtained with medium reflectivity mirrors (R ∼ 0.999) at considerably lower cost

Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

DEFF Research Database (Denmark)

Kulkova, Irina

This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

Optically pumped semiconductor lasers for atomic and molecular physics

Science.gov (United States)

Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

2015-03-01

Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

Laser-induced shockwave propagation from ablation in a cavity

International Nuclear Information System (INIS)

Zeng Xianzhong; Mao Xianglei; Mao, Samuel S.; Wen, S.-B.; Greif, Ralph; Russo, Richard E.

2006-01-01

The propagation of laser-induced shockwaves from ablation inside of cavities was determined from time-resolved shadowgraph images. The temperature and electron number density of the laser-induced plasma was determined from spectroscopic measurements. These properties were compared to those for laser ablation on the flat surface under the same energy and background gas condition. A theoretical model was proposed to determine the amount of energy and vaporized mass stored in the vapor plume based on these measurements

Melting phenomenon and laser annealing in semiconductors

International Nuclear Information System (INIS)

Narayan, J.

1981-03-01

The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

Chaotic bursting in semiconductor lasers

Science.gov (United States)

Ruschel, Stefan; Yanchuk, Serhiy

2017-11-01

We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Petersen, Paul Michael

2013-01-01

in the broad wavelength range from 1049 nm to 1093 nm and the beam propagation factor is improved from M2 = 2.8 to below 1.1. The laser frequency is automatically locked to the cavity resonance frequency using optical feedback. Furthermore, we show that this adaptive external cavity approach leads to efficient......We report the realization of a tapered diode laser operated in a coupled ring cavity that significantly improves the coherence properties of the tapered laser and efficiently generates tunable light at the second harmonic frequency. The tapered diode laser is tunable with single-frequency output...... frequency doubling. More than 500 mW green output power is obtained by placing a periodically poled LiNbO3 crystal in the external cavity. The single frequency green output from the laser system is tunable in the 530 nm to 533 nm range limited by the LiNbO3 crystal. The optical to optical conversion...

Laser of optical fiber composed by two coupled cavities: application as optical fiber sensor

International Nuclear Information System (INIS)

Vazquez S, R.A.; Kuzin, E.A.; Ibarra E, B.; May A, M.; Shlyagin, M.; Marquez B, I.

2004-01-01

We show an optical fiber laser sensor which consist of two cavities coupled and three fiber Bragg gratings. We used one Bragg grating (called reference) and two Bragg gratings (called sensors), which have the lower reflection wavelength. The reference grating with the two sensors grating make two cavities: first one is the internal cavity which has 4230 m of length and the another one is the external cavity which has 4277 m of length. Measuring the laser beating frequency for a resonance cavity and moving the frequency peaks when the another cavity is put in resonance, we prove that the arrangement can be used as a two points sensor for determining the difference of temperature or stress between these two points. (Author)

Study of Low Work Function Materials for Hot Cavity Resonance Ionization Laser Ion Sources

CERN Document Server

Catherall, R; Fedosseev, V; Marsh, B; Mattolat, C; Menna, Mariano; Österdahl, F; Raeder, S; Schwellnus, F; Stora, T; Wendt, K; CERN. Geneva. AB Department

2008-01-01

The selectivity of a hot cavity resonance ionization laser ion source (RILIS) is most often limited by contributions from competing surface ionization on the hot walls of the ionization cavity. In this article we present investigations on the properties of designated high-temperature, low-work function materials regarding their performance and suitability as cavity material for RILIS. Tungsten test cavities, impregnated with a mixture of barium oxide and strontium oxide (BaOSrO on W), or alternatively gadolinium hexaboride (GdB6) were studied in comparison to a standard tungsten RILIS cavity as being routinely used for hot cavity laser ionization at ISOLDE. Measurement campaigns took place at the off-line mass separators at ISOLDE / CERN, Geneva and RISIKO / University of Mainz.

Study of low work function materials for hot cavity resonance ionization laser ion sources

CERN Document Server

Schwellnus, F; Crepieux, B; Fedosseev, V N; Marsh, B A; Mattolat, Ch; Menna, M; Österdahl, F K; Raeder, S; Stora, T; Wendta, K

2009-01-01

The selectivity of a hot cavity resonance ionization laser ion source (RILIS) is most often limited by contributions from competing surface ionization of the hot walls of the ionization cavity. In this article we present investigations on the properties of designated high temperature, low work function materials regarding their performance and suitability as cavity material for RILIS. Tungsten test cavities, impregnated with a mixture of barium oxide and strontium oxide (BaOSrO on W), or alternatively gadolinium hexaboride (GdB6) were studied in comparison to a standard tungsten RILIS cavity as being routinely used for hot cavity laser ionization at ISOLDE. Measurement campaigns took place at the off-line mass separators at ISOLDE/CERN, Geneva and RISIKO/University of Mainz.

Metal cutting by radiation from a CO2 laser with a self-filtering cavity

International Nuclear Information System (INIS)

Malikov, A G; Orishich, Anatolii M; Shulyat'ev, Viktor B

2009-01-01

The possibility of quality cutting by radiation from a CO 2 laser with an unstable self-filtering cavity (SFC) is experimentally investigated. The SFC provides the product of the divergence angle by the beam radius close to that for lower modes in a stable cavity (SC), however, at a higher radiation power, which favours faster cutting. In the far-field zone, the SFC beam has a diffraction structure with side maxima, which is usually considered as a negative factor in laser cutting. 25-mm-thick steel slabs have been cut. The comparison of the obtained results with known data on SC lasers shows that the principal characteristics of the cut (the width, edge roughness, specific expenditure of energy) are close in these lasers. A conclusion is made that at the chosen cavity parameters, the specific spatial structure of the SFC laser beam has no significant effect on the cut characteristics. (laser technologies)

Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

NARCIS (Netherlands)

Koumans, R.G.M.P.; Roijen, van R.

1996-01-01

We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

Science.gov (United States)

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Hybrid Vertical-Cavity Laser

DEFF Research Database (Denmark)

2010-01-01

The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide...... (18, 19) for receiving light from the grating region (11) is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes (16) are coupled to lateral in-plane modes (17, 20) of the in-plane waveguide formed in the silicon...

Towards passive and active laser stabilization using cavity-enhanced atomic interaction

DEFF Research Database (Denmark)

Schäffer, Stefan Alaric; Christensen, Bjarke Takashi Røjle; Rathmann, Stefan Mossor

2017-01-01

Ultra stable frequency references such as the ones used in optical atomic clocks and for quantum metrology may be obtained by stabilizing a laser to an optical cavity that is stable over time. State-of-the-art frequency references are constructed in this way, but their stabilities are currently...... experimental efforts derived from these proposals, to use cavity-enhanced interaction with atomic 88Sr samples as a frequency reference for laser stabilization. Such systems can be realized using both passive and active approaches where either the atomic phase response is used as an error signal, or the narrow...... atomic transition itself is used as a source for a spectrally pure laser. Both approaches shows the promise of being able to compete with the current state of the art in stable lasers and have similar limitations on their ultimately achievable linewidths [1, 2]....

The system of enclosed optical cavities as a tool for laser photons storing

International Nuclear Information System (INIS)

Androsov, V.P.; Karnaukhov, I.M.; Telegin, Yu.N.

2004-01-01

The calculation of the system consisting of two optical cavities enclosed one into another is performed in the plane-wave approximation. It is shown that under definite conditions one can obtain an enhancement of the electromagnetic field in the internal cavity as compared to the case of direct excitation of the cavity with an electromagnetic wave of the same amplitude. The comparative analysis of these two approaches is carried out. We suppose to apply the proposed system with moderate-reflectivity mirrors (R=0.99) for accumulating laser photons in the optical cavity of the X-ray source LESR-N100 based on Compton scattering of the laser beam on relativistic electrons stored in the ring

Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

2010-10-01

A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

Science.gov (United States)

Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

2017-08-03

The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

Science.gov (United States)

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

International Nuclear Information System (INIS)

Eliseev, P G

2012-01-01

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

Cavity-soliton laser with frequency-selective feedback

International Nuclear Information System (INIS)

Scroggie, A. J.; Firth, W. J.; Oppo, G.-L.

2009-01-01

We present a coupled-cavity model of a laser with frequency-selective feedback, and use it to analyze and explain the existence of stationary and dynamic spatial solitons in the device. Particular features of soliton addressing in this system are discussed. We demonstrate the advantages of our model with respect to the common Lang-Kobayashi approximation.

Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

Science.gov (United States)

Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

2018-01-01

The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

Highly efficient generation of ultraintense high-energy ion beams using laser-induced cavity pressure acceleration

Energy Technology Data Exchange (ETDEWEB)

Badziak, J.; Jablonski, S.; Raczka, P. [Institute of Plasma Physics and Laser Microfusion, Euratom Association, 01-497 Warsaw (Poland)

2012-08-20

Results of particle-in-cell (PIC) simulations of fast ion generation in the recently proposed laser-induced cavity pressure acceleration (LICPA) scheme in which a picosecond circularly polarized laser pulse of intensity {approx}10{sup 21} W/cm{sup 2} irradiates a carbon target placed in a cavity are presented. It is shown that due to circulation of the laser pulse in the cavity, the laser-ions energy conversion efficiency in the LICPA scheme is more than twice as high as that for the conventional (without a cavity) radiation pressure acceleration scheme and a quasi-monoenergetic carbon ion beam of the mean ion energy {approx}0.5 GeV and the energy fluence {approx}0.5 GJ/cm{sup 2} is produced with the efficiency {approx}40%. The results of PIC simulations are found to be in fairly good agreement with the predictions of the generalized light-sail model.

Mathematical modeling of thermal runaway in semiconductor laser operation

NARCIS (Netherlands)

Smith, W.R.

2000-01-01

A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

Tuning range and output power optimization of an external-cavity GaN diode laser at 455 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

In this paper we discuss how different feedback gratings affect the tuning range and the output power of external feedback diode laser systems. A tunable high-power narrow-spectrum external-cavity diode laser system around 455 nm is investigated. The laser system is based on a high-power GaN diode...... laser in a Littrow external-cavity. Both a holographic diffraction grating and a ruled diffraction grating are used as feedback elements in the external cavity. The output power, spectral bandwidth, and tunable range of the external cavity diode laser system are measured and compared with the two...... gratings at different injected currents. When the holographic grating is used, the laser system can be tuned over a range of 1.4 nm with an output power around 530 mW. When the ruled grating is used, the laser system can be tuned over a range of 6.0 nm with an output power around 80 mW. The results can...

Study of the Propagation of Short Pulse Laser With Cavity Using ...

African Journals Online (AJOL)

The purpose of this representation is to show the potentialities (Computational Time, access to the dynamic and feasibility of systematic studies) of the numerical study of the nonlinear dynamics in laser cavity, assisted by software. We will give as an example, one type of cavity completely fibered composed of several ...

Development of superconducting acceleration cavity technology for free electron lasers

International Nuclear Information System (INIS)

Lee, Jong Min; Lee, Byung Cheol; Kim, Sun Kook; Jeong, Young Uk; Cho, Sung Oh

2000-10-01

As a result of the cooperative research between the KAERI and Peking University, the key technologies of superconducting acceleration cavity and photoelectron gun have been developed for the application to high power free electron lasers. A 1.5-GHz, 1-cell superconducting RF cavity has been designed and fabricated by using pure Nb sheets. The unloaded Q values of the fabricated superconducting cavity has been measured to be 2x10 9 at 2.5K, and 8x10 9 at 1.8K. The maximum acceleration gradient achieved was 12 MeV/m at 2.5K, and 20MV/m at 1.8 K. A cryostat for the 1-cell superconducting cavity has been designed. As a source of electron beam, a DC photocathode electron gun has been designed and fabricated, which is composed of a photocathode evaporation chamber and a 100-keV acceleration chamber. The efficiency of the Cs2Te photocathode is 3% nominally at room temperature, 10% at 290 deg C. The superconducting photoelectron gun system developed has been estimated to be a good source of high-brightness electron beam for high-power free electron lasers

Development of superconducting acceleration cavity technology for free electron lasers

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Min; Lee, Byung Cheol; Kim, Sun Kook; Jeong, Young Uk; Cho, Sung Oh

2000-10-01

As a result of the cooperative research between the KAERI and Peking University, the key technologies of superconducting acceleration cavity and photoelectron gun have been developed for the application to high power free electron lasers. A 1.5-GHz, 1-cell superconducting RF cavity has been designed and fabricated by using pure Nb sheets. The unloaded Q values of the fabricated superconducting cavity has been measured to be 2x10{sup 9} at 2.5K, and 8x10{sup 9} at 1.8K. The maximum acceleration gradient achieved was 12 MeV/m at 2.5K, and 20MV/m at 1.8 K. A cryostat for the 1-cell superconducting cavity has been designed. As a source of electron beam, a DC photocathode electron gun has been designed and fabricated, which is composed of a photocathode evaporation chamber and a 100-keV acceleration chamber. The efficiency of the Cs2Te photocathode is 3% nominally at room temperature, 10% at 290 deg C. The superconducting photoelectron gun system developed has been estimated to be a good source of high-brightness electron beam for high-power free electron lasers.

Vertical-cavity surface-emitting lasers for medical diagnosis

DEFF Research Database (Denmark)

Ansbæk, Thor

This thesis deals with the design and fabrication of tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs). The focus has been the application of tunable VCSELs in medical diagnostics, specifically OCT. VCSELs are candidates as light sources for swept-source OCT where their high sweep rate, wide...

Breaking and Moving Hotspots in a Large Grain Nb Cavity with a Laser Beam

International Nuclear Information System (INIS)

Ciovati, G.; Cheng, G.; Flood, R. J.; Jordan, K.; Kneisel, P.; Morrone, M. L.; Turlington, L.; Wilson, K. M.; Zhang, S.; Anlage, S. M.; Gurevich, A. V.; Nemes, G.; Baldwin, C.

2011-01-01

Magnetic vortices pinned near the inner surface of SRF Nb cavities are a possible source of RF hotspots, frequently observed by temperature mapping of the cavities outer surface at RF surface magnetic fields of about 100 mT. Theoretically, we expect that the thermal gradient provided by a 10 W green laser shining on the inner cavity surface at the RF hotspot locations can move pinned vortices to different pinning locations. The experimental apparatus to send the beam onto the inner surface of a photoinjector-type large-grain Nb cavity is described. Preliminary results on the changes in thermal maps observed after applying the laser heating are also reported

High sensitivity detection of NO2 employing cavity ringdown spectroscopy and an external cavity continuously tunable quantum cascade laser.

Science.gov (United States)

Rao, Gottipaty N; Karpf, Andreas

2010-09-10

A trace gas sensor for the detection of nitrogen dioxide based on cavity ringdown spectroscopy (CRDS) and a continuous wave external cavity tunable quantum cascade laser operating at room temperature has been designed, and its features and performance characteristics are reported. By measuring the ringdown times of the cavity at different concentrations of NO(2), we report a sensitivity of 1.2 ppb for the detection of NO(2) in Zero Air.

Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

Science.gov (United States)

Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

2017-08-01

This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

Dependence of mis-alignment sensitivity of ring laser gyro cavity on cavity parameters

Energy Technology Data Exchange (ETDEWEB)

Sun Feng; Zhang Xi; Zhang Hongbo; Yang Changcheng, E-mail: sunok1234@sohu.com [Huazhong Institute of Electro-Optics - Wuhan National Lab for Optoelectronics, Wuhan, Hubei (China)

2011-02-01

The ring laser gyroscope (RLG), as a rotation sensor, has been widely used for navigation and guidance on vehicles and missiles. The environment of strong random-vibration and large acceleration may deteriorate the performance of the RLG due to the vibration-induced tilting of the mirrors. In this paper the RLG performance is theoretically analyzed and the parameters such as the beam diameter at the aperture, cavity mirror alignment sensitivities and power loss due to the mirror tilting are calculated. It is concluded that by carefully choosing the parameters, the significant loss in laser power can be avoided.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

Science.gov (United States)

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

Comparison of Dentin Permeability After Tooth Cavity Preparation with Diamond Bur and Er:YAG Laser

Directory of Open Access Journals (Sweden)

Masoumeh Hasani Tabatabaei

2016-05-01

Full Text Available Objectives: The aim of this study was to compare the permeability of dentin after using diamond bur and Er:YAG laser.Materials and Methods: Seventy-two recently extracted, intact, and restoration-free human permanent molars were used in this study. The samples were randomly divided into three groups of 24 each and class I cavities were prepared as follows. Group 1: High speed diamond bur with air and water spray. Group 2: Er:YAG laser. Group 3: Er:YAG laser followed by additional sub-ablative laser treatment. Each group consisted of two subgroups with different cavity depths of 2mm and 4mm.  The entire cavity floor was in dentin. Two samples from each subgroup were observed under scanning electron microscope (SEM. The external surfaces of other samples were covered with nail varnish (except the prepared cavity and immersed in 0.5% methylene blue solution for 48 hours.  After irrigation of samples with water, they were sectioned in bucco-lingual direction. Then, the samples were evaluated under a stereomicroscope at ×160 magnification. The data were analyzed using two-way ANOVA and Tukey’s HSD test.Results: Two-way ANOVA showed significant difference in permeability between groups 2 and 3 (laser groups with and without further treatment and group 1 (bur group. The highest permeability was seen in the group 1. There was no significant difference in dentin permeability between groups 2 and 3 and no significant difference was observed between different depths (2mm and 4mm.Conclusion: Cavities prepared by laser have less dentin permeability than cavities prepared by diamond bur.

Resonator modes and mode dynamics for an external cavity-coupled laser array

Science.gov (United States)

Nair, Niketh; Bochove, Erik J.; Aceves, Alejandro B.; Zunoubi, Mohammad R.; Braiman, Yehuda

2015-03-01

Employing a Fox-Li approach, we derived the cold-cavity mode structure and a coupled mode theory for a phased array of N single-transverse-mode active waveguides with feedback from an external cavity. We applied the analysis to a system with arbitrary laser lengths, external cavity design and coupling strengths to the external cavity. The entire system was treated as a single resonator. The effect of the external cavity was modeled by a set of boundary conditions expressed by an N-by-N frequency-dependent matrix relation between incident and reflected fields at the interface with the external cavity. The coupled mode theory can be adapted to various types of gain media and internal and external cavity designs.

Optically coupled cavities for wavelength switching

Energy Technology Data Exchange (ETDEWEB)

Costazo-Caso, Pablo A; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.ar, E-mail: granieri@rose-hulman.edu, E-mail: siahmako@rose-hulman.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

2011-01-01

An optical bistable device which presents hysteresis behavior is proposed and experimentally demonstrated. The system finds applications in wavelength switching, pulse reshaping and optical bistability. It is based on two optically coupled cavities named master and slave. Each cavity includes a semiconductor optical amplifier (SOA), acting as the gain medium of the laser, and two pair of fiber Bragg gratings (FBG) which define the lasing wavelength (being different in each cavity). Finally, a variable optical coupler (VOC) is employed to couple both cavities. Experimental characterization of the system performance is made analyzing the effects of the coupling coefficient between the two cavities and the driving current in each SOA. The properties of the hysteretic bistable curve and switching can be controlled by adjusting these parameters and the loss in the cavities. By selecting the output wavelength ({lambda}{sub 1} or {lambda}{sub 2}) with an external filter it is possible to choose either the invert or non-invert switched signal. Experiments were developed employing both optical discrete components and a photonic integrated circuit. They show that for 8 m-long cavities the maximum switching frequency is about 500 KHz, and for 4 m-long cavities a minimum rise-time about 21 ns was measured. The switching time can be reduced by shortening the cavity lengths and using photonic integrated circuits.

Piezoelectric deformable mirror for intra-cavity laser adaptive optics.

CSIR Research Space (South Africa)

Long, CS

2008-03-01

Full Text Available This paper describes the development of a deformable mirror to be used in conjunction with diffractive optical elements inside a laser cavity. A prototype piezoelectric unimorph adaptive mirror was developed to correct for time dependent phase...

Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

Science.gov (United States)

Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

2017-01-01

Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (pirrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

Monolithic integration of microfluidic channels and semiconductor lasers

Science.gov (United States)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Ultrafast Optics: Vector Cavity Laser - Physics and Technology

Science.gov (United States)

2016-06-14

with a quasi- vector cavity both numerically and experimentally. It is expected that through the study a deep and comprehensive understanding on the...799-801, Jun. 1997. 31. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like pulse in a gain-guided soliton fiber laser," Opt...solitons in a ring fiber laser," Optics Communications 281 (22), 5614 (2008). 110. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like

Ultrafast Optics - Vector Cavity Lasers: Physics and Technology

Science.gov (United States)

2016-06-14

with a quasi- vector cavity both numerically and experimentally. It is expected that through the study a deep and comprehensive understanding on the...799-801, Jun. 1997. 31. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like pulse in a gain-guided soliton fiber laser," Opt...solitons in a ring fiber laser," Optics Communications 281 (22), 5614 (2008). 110. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like

Dynamics of laterally coupled semiconductor lasers: transition to chaos

NARCIS (Netherlands)

Yousefi, M.; Barsella, A.; Lenstra, D.; Lenstra, D.; Morthier, G.; Erneux, T.; Pessa, M.

2004-01-01

A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were

A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2014-07-28

Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

Laser polishing for topography management of accelerator cavity surfaces

Energy Technology Data Exchange (ETDEWEB)

Zhao, Liang [College of William and Mary, Williamsburg, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Klopf, J. Mike [College of William and Mary, Williamsburg, VA (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Kelley, Michael J. [College of William and Mary, Williamsburg, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

2015-07-20

Improved energy efficiency and reduced cost are greatly desired for advanced particle accelerators. Progress toward both can be made by atomically-smoothing the interior surface of the niobium superconducting radiofrequency accelerator cavities at the machine's heart. Laser polishing offers a green alternative to the present aggressive chemical processes. We found parameters suitable for polishing niobium in all surface states expected for cavity production. As a result, careful measurement of the resulting surface chemistry revealed a modest thinning of the surface oxide layer, but no contamination.

Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

International Nuclear Information System (INIS)

Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

2010-01-01

Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

Science.gov (United States)

Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

2010-06-01

Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

Semiconductor ring lasers coupled by a single waveguide

Science.gov (United States)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

Field-glass range finder with a semiconductor laser

Science.gov (United States)

Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan

1995-03-01

This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

Semiconductor laser joint study program with Rome Laboratory

Science.gov (United States)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

Resonance generation of photons from vacuum in cavities due to strong periodical changes of conductivity in a thin semiconductor boundary layer

International Nuclear Information System (INIS)

Dodonov, A V; Dodonov, V V

2005-01-01

We study a possibility of photon generation from vacuum in a cavity with an artificial effective time-dependent plasma mirror, which could be created by means of periodical short laser pulses, illuminating a thin semiconductor slab. We take into account two important circumstances: a big imaginary part of the complex time-dependent dielectric permeability inside the slab and a strong dependence of this imaginary part on the distance from the surface of the slab. We find the conditions under which the usual unitary quantization schemes in time-dependent media with real dielectric permeability can be applied to the problem concerned with relatively small (a few per cent) error. We show that, by using a slab with thickness of the order of 1 mm, it is possible to generate a large number of microwave (GHz) photons (up to 10 8 or more) after several thousand picosecond pulses with repetition frequency of the order of 1 GHz, provided that semiconductor materials with high mobility of carriers, high photoabsorption efficiency and small recombination time (less than 1 ns) can be found. We discuss the possible advantages of modes with TM polarization over TE ones, as well as some other important problems to be solved

Phase Locking of Laser Diode Array by Using an Off-Axis External Talbot Cavity

International Nuclear Information System (INIS)

Su Zhou-Ping; Zhu Zhuo-Wei; Que Li-Zhi; Zhu Yun; Ji Zhi-Cheng

2012-01-01

Phase locking of a laser diode array is demonstrated experimentally by using an off-axis external Talbot cavity with a feedback plane mirror. Due to good spatial mode discrimination, the cavity does not need a spatial filter. By employing the cavity, a clear and stable far-field interference pattern can be observed when the driver current is less than 14 A. In addition, the spectral line width can be reduced to 0.8 nm. The slope efficiency of the phase-locked laser diode array is about 0.62 W/A. (fundamental areas of phenomenology(including applications))

Design of a high-power Nd:YAG Q-switched laser cavity

Science.gov (United States)

Singh, Ikbal; Kumar, Avinash; Nijhawan, O. P.

1995-06-01

An electro-optically Q-switched Nd:YAG laser resonator that uses two end prisms placed orthogonally perpendicular to each other has been designed. This configuration improves the stability of the resonator and does not alter the characteristics of the electro-optical Q switch. The outcoupling ratio of the cavity is optimized by a change in the azimuthal angle of a phase-matched Porro prism placed at one end of the cavity. The prism placed at the other end of the cavity is designed so that it introduces a phase change of Pi , regardless of its orientation and index of refraction, resulting in a more efficient and stable cavity.

Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

International Nuclear Information System (INIS)

Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

2013-01-01

We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

Science.gov (United States)

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate transmission is less than 2 dB for all 16 channels.

Chaos-pass filtering in injection-locked semiconductor lasers

International Nuclear Information System (INIS)

Murakami, Atsushi; Shore, K. Alan

2005-01-01

Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

Wavelength tunable CW red laser generated based on an intracavity-SFG composite cavity

Science.gov (United States)

Zhang, Z. N.; Bai, Y.; Lei, G. Z.; Bai, B.; Sun, Y. X.; Hu, M. X.; Wang, C.; Bai, J. T.

2016-12-01

We report a wavelength-tunable watt-level continuous wave (CW) red laser that uses a composite cavity based on an intracavity sum-frequency generation (SFG). The composite cavity is composed of a LD side-pumped Nd: GdVO4 p-polarized 1062.9 nm resonant cavity and a resonant optical parametric oscillator (SRO) of s-polarized signal light using a periodically poled crystal MgO: PPLN. Based on the temperature tuning from 30 °C to 200 °C, the CW red laser beams are obtained in a tunable waveband from 634.4 nm to 649.1 nm, corresponding to a tunable output waveband from 3278.0 nm to 2940.2 nm of the mid-infrared idler lights. The maximum CW output power of the red laser at 634.4 nm and the idler light at 3278.0 nm reach 3.03 W and 4.13 W under 30 °C, respectively.

Generation of nanosecond laser pulses at a 2.2-MHz repetition rate by a cw diode-pumped passively Q-switched Nd3+:YVO4 laser

International Nuclear Information System (INIS)

Nghia, Nguyen T; Hao, Nguyen V; Orlovich, Valentin A; Hung, Nguyen D

2011-01-01

We report a new configuration of a high-repetition rate nanosecond laser based on a semiconductor saturable absorber mirror (SESAM). The SESAM is conventional technical solution for passive mode-locking at 1064 nm and simultaneously used as a highly reflecting mirror and a saturable absorber in a high-Q and short cavity of a cw diode-end-pumped a-cut Nd 3+ :YVO 4 laser. Two laser beams are coupled out from the cavity using an intracavity low-reflection thin splitter. The laser characteristics are investigated as functions of pump and resonator parameters. Using a 1.8-W cw pump laser diode at 808 nm, the passively Q-switched SESAMbased laser generates 22-ns pulses with an average power of 275 mW at a pulse repetition rate of 2250 kHz.

Waveguide embedded plasmon laser with multiplexing and electrical modulation

Science.gov (United States)

Ma, Ren-min; Zhang, Xiang

2017-08-29

This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

Deep-red semiconductor monolithic mode-locked lasers

International Nuclear Information System (INIS)

Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

2014-01-01

A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

Optimal operating conditions for external cavity semiconductor laser optical chaos communication system

International Nuclear Information System (INIS)

Priyadarshi, S; Pierce, I; Hong, Y; Shore, K A

2012-01-01

In optical chaos communications a message is masked in the noise-like broadband output of a chaotic transmitter laser, and message recovery is enabled through the synchronization of the transmitter and the (chaotic) receiver laser. Key issues are to identify the laser operating conditions which provide the highest quality synchronization conditions and those which provide optimized message extraction. In general such operating conditions are not coincident. In this paper numerical simulations are performed with the aim of identifying a regime of operation where the highest quality synchronization and optimizing message extraction efficiency are achieved simultaneously. Use of such an operating regime will facilitate practical deployment of optical chaos communications systems without the need for re-adjustment of laser operating conditions in the field. (paper)

High-order diffraction gratings for high-power semiconductor lasers

International Nuclear Information System (INIS)

Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

2012-01-01

A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

Science.gov (United States)

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

Integrated lasers in crystalline double tungstates with focused-ion-beam nanostructured photonic cavities

International Nuclear Information System (INIS)

Ay, F; Iñurrategui, I; Geskus, D; Aravazhi, S; Pollnau, M

2011-01-01

Deeply etched Bragg gratings were fabricated by focused ion beam (FIB) milling in KGd x Lu 1-x (WO 4 ) 2 :Yb 3+ to obtain photonic cavity structures. By optimizing parameters such as dose per area, dwell time and pixel resolution the redeposition effects were minimized and grating structures more than 4 μm in depth with an improved sidewall angle of ∼ 5° were achieved. Fabry-Perot microcavities were defined and used to assess the optical performance of the grating structures at ∼ 1530 nm. An on-chip integrated laser cavity at ∼ 980 nm was achieved by defining a FIB reflective grating and FIB polished waveguide end-facet. With this cavity, an on-chip integrated waveguide laser in crystalline potassium double tungstate was demonstrated

Method for studying gas composition in the human mastoid cavity by use of laser spectroscopy.

Science.gov (United States)

Lindberg, Sven; Lewander, Märta; Svensson, Tomas; Siemund, Roger; Svanberg, Katarina; Svanberg, Sune

2012-04-01

We evaluated a method for gas monitoring in the mastoid cavity using tunable diode laser spectroscopy by comparing it to simultaneously obtained computed tomographic (CT) scans. The presented optical technique measures free gases, oxygen (O2), and water vapor (H2O) within human tissue by use of low-power diode lasers. Laser light was sent into the tip of the mastoid process, and the emerging light at the level of the antrum was captured with a detector placed on the skin. The absorption of H2O was used to monitor the probed gas volume of the mastoid cavity, and it was compared to the CT scan-measured volume. The ratio between O2 absorption and H2O absorption estimated the O2 content in the mastoid cavity and thus the ventilation. The parameters were compared to the grading of mastoid cavities based on the CT scans (n = 31). The reproducibility of the technique was investigated by measuring each mastoid cavity 4 times. Both O2 and H2O were detected with good reproducibility. The H2O absorption and the CT volume correlated (r = 0.69). The average ratio between the normalized O2 absorption and the H2O absorption signals was 0.7, indicating a lower O2 content than in surrounding air (expected ratio, 1.0), which is consistent with previous findings made by invasive techniques. All mastoid cavities with radiologic signs of disease were detected. Laser spectroscopy monitoring appears to be a usable tool for noninvasive investigations of gas composition in the mastoid cavity, providing important clinical information regarding size and ventilation.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

Science.gov (United States)

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Continuous wave room temperature external ring cavity quantum cascade laser

Energy Technology Data Exchange (ETDEWEB)

Revin, D. G., E-mail: d.revin@sheffield.ac.uk; Hemingway, M.; Vaitiekus, D.; Cockburn, J. W. [Physics and Astronomy Department, The University of Sheffield, S3 7RH Sheffield (United Kingdom); Hempler, N.; Maker, G. T.; Malcolm, G. P. A. [M Squared Lasers Ltd., G20 0SP Glasgow (United Kingdom)

2015-06-29

An external ring cavity quantum cascade laser operating at ∼5.2 μm wavelength in a continuous-wave regime at the temperature of 15 °C is demonstrated. Out-coupled continuous-wave optical powers of up to 23 mW are observed for light of one propagation direction with an estimated total intra-cavity optical power flux in excess of 340 mW. The uni-directional regime characterized by the intensity ratio of more than 60 for the light propagating in the opposite directions was achieved. A single emission peak wavelength tuning range of 90 cm{sup −1} is realized by the incorporation of a diffraction grating into the cavity.

Continuous wave room temperature external ring cavity quantum cascade laser

International Nuclear Information System (INIS)

Revin, D. G.; Hemingway, M.; Vaitiekus, D.; Cockburn, J. W.; Hempler, N.; Maker, G. T.; Malcolm, G. P. A.

2015-01-01

An external ring cavity quantum cascade laser operating at ∼5.2 μm wavelength in a continuous-wave regime at the temperature of 15 °C is demonstrated. Out-coupled continuous-wave optical powers of up to 23 mW are observed for light of one propagation direction with an estimated total intra-cavity optical power flux in excess of 340 mW. The uni-directional regime characterized by the intensity ratio of more than 60 for the light propagating in the opposite directions was achieved. A single emission peak wavelength tuning range of 90 cm −1 is realized by the incorporation of a diffraction grating into the cavity

Laser photo-reflectance characterization of resonant nonlinear electro-refraction in thin semiconductor films

International Nuclear Information System (INIS)

Chism, Will; Cartwright, Jason

2012-01-01

Photo-reflectance (PR) measurements provide a non-contact means for the precise characterization of semiconductor electronic properties. In this paper, we investigate the use of a laser beam as the probe beam in the PR setup. In this case it is seen that the nonlinear refraction is responsible for the amplitude change of the reflected probe field, whereas the phase change is due to nonlinear absorption. The open aperture condition may then be used to eliminate the spatial phase at the detector, thereby isolating the electro-refractive contribution to the PR signal. This greatly simplifies the PR analysis and allows absolute measurements of electro-refraction in thin semiconductor films. We report the application of the laser PR technique to characterize physical strain in thin silicon on silicon-germanium films. - Highlights: ► We describe the theory of laser photoreflectance. ► Laser photoreflectance is used to independently characterize nonlinear refraction. ► We report the characterization of strain in thin strained silicon films.

Measuring the Dispersion in Laser Cavity Mirrors using White-Light Interferometry

Science.gov (United States)

2008-03-01

mirrors. Two AlGaInP (aluminum gallium indium phosphide ) diode lasers are aligned such that one is polarized vertically while one is polarized...linear crystals, where the index of refraction depends on beam intensity. Short pulses with high peak intensities are well 14 suited to induce the...MEASURING THE DISPERSION OF LASER CAVITY MIRRORS USING WHITE-LIGHT INTERFEROMETRY THESIS Allison S

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

Science.gov (United States)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Nd:YAG laser in endodontics: filling-material edge bordering on a root channel laser cavity

Science.gov (United States)

Belikov, Andrei V.; Sinelnik, Yuri A.; Moroz, Boris T.; Pavlovskaya, Irina V.

1997-12-01

For the very first time it is represented a study of filling material edge bordering upon root channel cavity modified with a laser. As a filling material it is used a glass ionomer cement. It is demonstrated that Nd:YAG laser radiation effects on increase of grade of edge bordering on the average of 20 - 30% at temperature rise of no more than 2 - 3 degrees in periodontium area in a period of operation.

Increasing the mode-locking efficiency of a cw solid-state laser with an auxiliary cavity

International Nuclear Information System (INIS)

Kalashnikov, V.L.; Kalosha, V.P.; Mikhailov, V.P.; Demchuk, M.I.

1992-01-01

It is predicted theoretically that the efficiency of self-mode locking can be raised by means of a bleachable shutter in the main cavity or an auxiliary cavity. The laser emits a stable train of ultrashort pulses under these conditions. The theory is based on a fluctuation model of the operation of a cw solid-state laser with a linear auxiliary cavity. The increase in efficiency involves a broadening of the region of parameter values of the system in which self-mode locking occurs, a significant decrease in the threshold pump intensity, and a reduced sensitivity of the operation to the phase mismatch of the lengths of the cavities. It is shown, for the first time, that a stable train of double ultrashort pulses can be generated by a system with a shutter in the auxiliary cavity. It is also shown that a self-mode locking is possible in the case in which there is a phase mismatch of the cavity lengths and there is no phase self-modulation in the main cavity. 15 refs., 8 figs

Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

Science.gov (United States)

Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.

2010-09-01

Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or "IR-AFPA", adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.

Ultrafast Optics: Vector Cavity Fiber Lasers - Physics and Technology

Science.gov (United States)

2016-06-14

with a quasi- vector cavity both numerically and experimentally. It is expected that through the study a deep and comprehensive understanding on the...799-801, Jun. 1997. 31. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like pulse in a gain-guided soliton fiber laser," Opt...solitons in a ring fiber laser," Optics Communications 281 (22), 5614 (2008). 110. L. M. Zhao, D. Y. Tang, J. Wu, X. Q. Fu, and S. C. Wen , "Noise-like

Laser cavities with self-pumped phase conjugation by mixing of four waves in an amplifier

International Nuclear Information System (INIS)

Sillard, Pierre

1998-01-01

The purpose of this research thesis is to characterise a new type of cavities with self-pumped phase conjugation which uses a mixing of four waves degenerated in a solid amplifier. After a definition of phase conjugation and a brief overview of the history of this technique, the author describes and compares the different laser architectures with phase conjugation. He explains benefits and perspectives related to cavities with self-pumped phase conjugation using a mixing of four waves in an amplifier. He develops the necessary formalism for the resolution of the coupled equations of four wave mixing in transient regime for a resonant and saturated non-linearity. He shows how these results can be applied to solid amplifiers, in particularly to the Nd:YAG amplifier which is used in all experiments. In the next part, the author describes the principle and characteristics of cavity with self-pumped phase conjugation injected by another laser. An experiment is performed with two conventional Nd:YAG amplifiers pumped by flash lamps. The excellent performance of the cavity allows the study of cavity without this injection, but self-oscillating is to be envisaged, and a modelling of self-oscillating cavities is proposed and studied. Results are compared with those obtained with two N:YAG amplifiers pumped by flash lamps. Polarisation properties of the self-oscillating cavity are also studied. Finally, the author reports an experimental validation of a cavity with self-pumped phase conjugation all in solid state, pumped by laser diodes (a more efficient pumping) [fr

Application of laser spot cutting on spring contact probe for semiconductor package inspection

Science.gov (United States)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

Directory of Open Access Journals (Sweden)

Vincenzo Spagnolo

2009-12-01

Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

Rf transfer in the Coupled-Cavity Free-Electron Laser Two-Beam Accelerator

International Nuclear Information System (INIS)

Makowski, M.A.

1991-01-01

A significant technical problem associated with the Coupled-Cavity Free-Electron Laser Two-Beam Accelerator is the transfer of RF energy from the drive accelerator to the high-gradient accelerator. Several concepts have been advanced to solve this problem. This paper examines one possible solution in which the drive and high-gradient cavities are directly coupled to one another by means of holes in the cavity walls or coupled indirectly through a third intermediate transfer cavity. Energy cascades through the cavities on a beat frequency time scale which must be made small compared to the cavity skin time but large compared to the FEL pulse length. The transfer is complicated by the fact that each of the cavities in the system can support many resonant modes near the chosen frequency of operation. A generalized set of coupled-cavity equations has been developed to model the energy transfer between the various modes in each of the cavities. For a two cavity case transfer efficiencies in excess of 95% can be achieved. 3 refs., 2 figs

Physical model for the incoherent writing/erasure of cavity solitons in semiconductor optical amplifiers.

Science.gov (United States)

Barbay, S; Kuszelewicz, R

2007-09-17

We present a physical mechanism that explains the recent observations of incoherent writing and erasure of Cavity Solitons in a semiconductor optical amplifier [S. Barbay et al, Opt. Lett. 31, 1504-1506 (2006)]. This mechanism allows to understand the main observations of the experiment. In particular it perfectly explains why writing and erasure are possible as a result of a local perturbation in the carrier density, and why a delay is observed along with the writing process. Numerical simulations in 1D are performed and show very good qualitative agreement with the experimental observations.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser.

Science.gov (United States)

Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R

2015-11-01

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

International Nuclear Information System (INIS)

Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

2009-01-01

The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

Study on biological effect on mice and use safety of 830 nm semiconductor laser

International Nuclear Information System (INIS)

Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang

2006-01-01

Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

Nonlinear gain suppression in semiconductor lasers due to carrier heating

International Nuclear Information System (INIS)

Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.

1991-01-01

We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

Optical trapping with Bessel beams generated from semiconductor lasers

International Nuclear Information System (INIS)

Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

2014-01-01

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

Push-Pull Laser-Atomic Oscillator

International Nuclear Information System (INIS)

Jau, Y.-Y.; Happer, W.

2007-01-01

A vapor of alkali-metal atoms in the external cavity of a semiconductor laser, pumped with a time-independent injection current, can cause the laser to self-modulate at the 'field-independent 0-0 frequency' of the atoms. Push-pull optical pumping by the modulated light drives most of the atoms into a coherent superposition of the two atomic sublevels with an azimuthal quantum number m=0. The atoms modulate the optical loss of the cavity at the sharply defined 0-0 hyperfine frequency. As in a maser, the system is not driven by an external source of microwaves, but a very stable microwave signal can be recovered from the modulated light or from the modulated voltage drop across the laser diode. Potential applications for this new phenomenon include atomic clocks, the production of long-lived coherent atomic states, and the generation of coherent optical combs

Dynamics of temporally localized states in passively mode-locked semiconductor lasers

Science.gov (United States)

Schelte, C.; Javaloyes, J.; Gurevich, S. V.

2018-05-01

We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

Single-frequency blue light generation by single-pass sum-frequency generation in a coupled ring cavity tapered laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Petersen, Paul Michael

2013-01-01

A generic approach for generation of tunable single frequency light is presented. 340 mW of near diffraction limited, single-frequency, and tunable blue light around 459 nm is generated by sum-frequency generation (SFG) between two tunable tapered diode lasers. One diode laser is operated in a ring...... cavity and another tapered diode laser is single-passed through a nonlinear crystal which is contained in the coupled ring cavity. Using this method, the single-pass conversion efficiency is more than 25%. In contrast to SFG in an external cavity, the system is entirely self-stabilized with no electronic...

Broadband multi-wavelength Brillouin lasers with an operating wavelength range of 1500–1600 nm generated by four-wave mixing in a dual wavelength Brillouin fiber laser cavity

Science.gov (United States)

Li, Q.; Jia, Z. X.; Weng, H. Z.; Li, Z. R.; Yang, Y. D.; Xiao, J. L.; Chen, S. W.; Huang, Y. Z.; Qin, W. P.; Qin, G. S.

2018-05-01

We demonstrate broadband multi-wavelength Brillouin lasers with an operating wavelength range of 1500–1600 nm and a frequency separation of ~9.28 GHz generated by four-wave mixing in a dual wavelength Brillouin fiber laser cavity. By using one continuous-wave laser as the pump source, multi-wavelength Brillouin lasers with an operating wavelength range of 1554–1574 nm were generated via cascaded Brillouin scattering and four-wave mixing. Interestingly, when pumped by two continuous-wave lasers with an appropriate frequency separation, the operating wavelength range of the multi-wavelength Brillouin lasers was increased to 1500–1600 nm due to cavity-enhanced cascaded four-wave mixing among the frequency components generated by two pump lasers in the dual wavelength Brillouin laser cavity.

An external-cavity quantum cascade laser operating near 5.2 µm combined with cavity ring-down spectroscopy for multi-component chemical sensing

Science.gov (United States)

Dutta Banik, Gourab; Maity, Abhijit; Som, Suman; Pal, Mithun; Pradhan, Manik

2018-04-01

We report on the performance of a widely tunable continuous wave mode-hop-free external-cavity quantum cascade laser operating at λ ~ 5.2 µm combined with cavity ring-down spectroscopy (CRDS) technique for high-resolution molecular spectroscopy. The CRDS system has been utilized for simultaneous and molecule-specific detection of several environmentally and bio-medically important trace molecular species such as nitric oxide, nitrous oxide, carbonyl sulphide and acetylene (C2H2) at ultra-low concentrations by probing numerous rotationally resolved ro-vibrational transitions in the mid-IR spectral region within a relatively small spectral range of ~0.035 cm-1. This continuous wave external-cavity quantum cascade laser-based multi-component CRDS sensor with high sensitivity and molecular specificity promises applications in environmental sensing as well as non-invasive medical diagnosis through human breath analysis.

Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

International Nuclear Information System (INIS)

Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

2013-01-01

We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

Theoretical Investigation of Subwavelength Gratings and Vertical Cavity Lasers Employing Grating Structures

DEFF Research Database (Denmark)

Taghizadeh, Alireza

This thesis deals with theoretical investigations of a newly proposed grating structure, referred to as hybrid grating (HG) as well as vertical cavity lasers based on the grating reflectors. The HG consists of a near-subwavelength grating layer and an unpatterned high-refractive-index cap layer...... directions, which is analogous to electronic quantum wells in conduction or valence bands. Several interesting configurations of heterostructures have been investigated and their potential in fundamental physics study and applications are discussed. For numerical and theoretical studies, a three...... feasibility than the HCG-based ones. Furthermore, the concept of cavity dispersion in vertical cavities is introduced and its importance in the modal properties is numerically investigated. The dispersion curvature of a cavity mode is interpreted as the effective photon mass of the cavity mode. In a vertical...

Multi-pulse enhanced laser ion acceleration using plasma half cavity targets

International Nuclear Information System (INIS)

Scott, G. G.; Brenner, C. M.; Neely, D.; Green, J. S.; Robinson, A. P. L.; Spindloe, C.; Bagnoud, V.; Brabetz, C.; Zielbauer, B.; Carroll, D. C.; MacLellan, D. A.; McKenna, P.; Roth, M.; Wagner, F.

2012-01-01

We report on a plasma half cavity target design for laser driven ion acceleration that enhances the laser to proton energy conversion efficiency and has been found to modify the low energy region of the proton spectrum. The target design utilizes the high fraction of laser energy reflected from an ionized surface and refocuses it such that a double pulse interaction is attained. We report on numerical simulations and experimental results demonstrating that conversion efficiencies can be doubled, compared to planar foil interactions, when the secondary pulse is delivered within picoseconds of the primary pulse.

Multi-pulse enhanced laser ion acceleration using plasma half cavity targets

Energy Technology Data Exchange (ETDEWEB)

Scott, G. G.; Brenner, C. M.; Neely, D. [Central Laser Facility, STFC Rutherford Appleton Laboratory, OX11 0QX Didcot (United Kingdom); Department of Physics SUPA, University of Strathclyde, G4 0NG Glasgow (United Kingdom); Green, J. S.; Robinson, A. P. L.; Spindloe, C. [Central Laser Facility, STFC Rutherford Appleton Laboratory, OX11 0QX Didcot (United Kingdom); Bagnoud, V.; Brabetz, C.; Zielbauer, B. [PHELIX Group, Gesellschaft fuer Schwerionenforschung, D-64291 Darmstadt (Germany); Carroll, D. C.; MacLellan, D. A.; McKenna, P. [Department of Physics SUPA, University of Strathclyde, G4 0NG Glasgow (United Kingdom); Roth, M. [Fachbereich Physik, Technische Universitaet Darmstadt, D-64289 Darmstadt (Germany); Wagner, F. [PHELIX Group, Gesellschaft fuer Schwerionenforschung, D-64291 Darmstadt (Germany); Fachbereich Physik, Technische Universitaet Darmstadt, D-64289 Darmstadt (Germany)

2012-07-09

We report on a plasma half cavity target design for laser driven ion acceleration that enhances the laser to proton energy conversion efficiency and has been found to modify the low energy region of the proton spectrum. The target design utilizes the high fraction of laser energy reflected from an ionized surface and refocuses it such that a double pulse interaction is attained. We report on numerical simulations and experimental results demonstrating that conversion efficiencies can be doubled, compared to planar foil interactions, when the secondary pulse is delivered within picoseconds of the primary pulse.

Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2010-01-01

We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

Dual-wavelength erbium-doped fiber laser with asymmetric fiber Bragg grating Fabry-Perot cavity

Science.gov (United States)

Chen, Cong; Xu, Zhi-wei; Wang, Meng; Chen, Hai-yan

2014-11-01

A novel dual-wavelength fiber laser with asymmetric fiber Bragg grating (FBG) Fabry-Perot (FP) cavity is proposed and experimentally demonstrated. A couple of uniform FBGs are used as the cavity mirrors, and the third FBG is used as intracavity wavelength selector by changing its operation temperature. Experimental results show that by adjusting the operation temperature of the intracavity wavelength selector, a tunable dual-wavelength laser emission can be achieved. The results demonstrate the new concept of dual-wavelength lasing with asymmetric FBG FP resonator and its technical feasibility.

Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

Science.gov (United States)

Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

1988-01-01

56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

Enhanced efficiency of plasma acceleration in the laser-induced cavity pressure acceleration scheme

International Nuclear Information System (INIS)

Badziak, J; Rosiński, M; Jabłoński, S; Pisarczyk, T; Chodukowski, T; Parys, P; Rączka, P; Krousky, E; Ullschmied, J; Liska, R; Kucharik, M

2015-01-01

Among various methods for the acceleration of dense plasmas the mechanism called laser-induced cavity pressure acceleration (LICPA) is capable of achieving the highest energetic efficiency. In the LICPA scheme, a projectile placed in a cavity is accelerated along a guiding channel by the laser-induced thermal plasma pressure or by the radiation pressure of an intense laser radiation trapped in the cavity. This arrangement leads to a significant enhancement of the hydrodynamic or electromagnetic forces driving the projectile, relative to standard laser acceleration schemes. The aim of this paper is to review recent experimental and numerical works on LICPA with the emphasis on the acceleration of heavy plasma macroparticles and dense ion beams. The main experimental part concerns the research carried out at the kilojoule sub-nanosecond PALS laser facility in Prague. Our measurements performed at this facility, supported by advanced two-dimensional hydrodynamic simulations, have demonstrated that the LICPA accelerator working in the long-pulse hydrodynamic regime can be a highly efficient tool for the acceleration of heavy plasma macroparticles to hyper-velocities and the generation of ultra-high-pressure (>100 Mbar) shocks through the collision of the macroparticle with a solid target. The energetic efficiency of the macroparticle acceleration and the shock generation has been found to be significantly higher than that for other laser-based methods used so far. Using particle-in-cell simulations it is shown that the LICPA scheme is highly efficient also in the short-pulse high-intensity regime and, in particular, may be used for production of intense ion beams of multi-MeV to GeV ion energies with the energetic efficiency of tens of per cent, much higher than for conventional laser acceleration schemes. (paper)

Evaluation of the cavity margins after Er:YAG laser ablation of the enamel and dentin

Science.gov (United States)

Dostalova, Tatjana; Krejsa, Otakar; Jelinkova, Helena; Hamal, Karel

1994-12-01

This study investigates the checks of cavity margin after enamel and dentin ablation. The Er:YAG laser enamel and dentin ablation can be directly connected with the danger of cracks originating in the enamel near the cavity. This study evaluates the quality of the enamel edges after Er:YAG laser preparation. The enamel and dentin of buccal surfaces were ablated by the Er:YAG laser radiation. An Erbium:YAG laser system with the energy of 200 mJ was used to generate 200 microsecond(s) long pulses of mid-infrared 2.94 micrometers light in multimode configuration. The laser was operating in a free running mode, the repetition rate being 0.5 Hz with average laser power of 100 mW. Laser radiation was focused on the tooth tissue. Water cooling was used during the procedure in order to prevent tooth tissue destruction. The time of laser preparation was 5 minutes. A cavity of class V was prepared. The teeth were immersed into 0.5% basic fuchsin and then centrifuged at 6000 rev/min for 20 minutes. The microphotographs of the margins stained with 0.5% basic fuchsin were made and then the longitudinal section of the teeth were evaluated. The micrographs of the longitudinal section were checked and measured afterwards. The effect of the investigated laser irradiation on the origin of cracks was analyzed in the scanning electron microscope. Micrographs of each tooth before and after the laser ablation were compared. Micrographs of the intact teeth after extraction present the cracks of the enamel. They depend on the pressure exerted during extraction. The influence of the laser ablation proper is it bears no signs of new cracks. The conclusions of this study demonstrate the non-invasive nature of the Er:YAG laser ablation of the hard dental tissues.

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

Science.gov (United States)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

An inductively heated hot cavity catcher laser ion source

CERN Document Server

Reponen, M; Pohjalainen, I; Rothe, S; Savonen, M; Sonnenschein, V; Voss, A

2015-01-01

An inductively heated hot cavity catcher has been constructed for the production of low-energy ion beams of exotic, neutron-deficient Agisotopes. A proof-of-principle experiment has been realized by implanting primary 107Ag21+ ions from a heavy-ion cyclotron into a graphite catcher. A variable-thickness nickel foil was used to degrade the energy of the primary beam in order to mimic the implantation depth expected from the heavy-ion fusion-evaporation recoils of N = Z94Ag. Following implantation, the silver atoms diffused out of the graphite and effused into the catcher cavity and transfer tube, where they were resonantly laser ionized using a three-step excitation and ionization scheme. Following mass separation, the ions were identified by scanning the frequency of the first resonant excitation step while recording the ion count rate. Ion release time profiles were measured for different implantation depths and cavity temperatures with the mean delay time varying from 10 to 600 ms. In addition, the diffusio...

STUDY OF THE PROPAGATION OF SHORT PULSE LASER WITH CAVITY USING NUMERICAL SIMULATION SOFTWARE

Directory of Open Access Journals (Sweden)

S. Terniche

2015-07-01

Full Text Available The purpose of this representation is to show the potentialities (Computational Time, access to the dynamic and feasibility of systematic studies of the numerical study of the nonlinear dynamics in laser cavity, assisted by software. We will give as an example, one type of cavity completely fibered composed of several elements and then studying the physical parameters of a pulse propagating into this cavity, determining its characteristics at the output. The results are interesting but we also projects to verify them experimentally by making assemblies similar to this type of cavities.

Active Stabilization of a Diode Laser Injection Lock

OpenAIRE

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

Memory Effect on Adaptive Decision Making with a Chaotic Semiconductor Laser

Directory of Open Access Journals (Sweden)

Takatomo Mihana

2018-01-01

Full Text Available We investigate the effect of a memory parameter on the performance of adaptive decision making using a tug-of-war method with the chaotic oscillatory dynamics of a semiconductor laser. We experimentally generate chaotic temporal waveforms of the semiconductor laser with optical feedback and apply them for adaptive decision making in solving a multiarmed bandit problem that aims at maximizing the total reward from slot machines whose hit probabilities are dynamically switched. We examine the dependence of making correct decisions on different values of the memory parameter. The degree of adaptivity is found to be enhanced with a smaller memory parameter, whereas the degree of convergence to the correct decision is higher for a larger memory parameter. The relations among the adaptivity, environmental changes, and the difficulties of the problem are also discussed considering the requirement of past decisions. This examination of ultrafast adaptive decision making highlights the importance of memorizing past events and paves the way for future photonic intelligence.

Meeting to discuss laser cavity design for photon linear collider ...

Indian Academy of Sciences (India)

linear collider – Daresbury, UK, 10 January 2006. ALEXANDER JOHN FINCH ... On 10 January 2006, a meeting to discuss laser cavity design for the photon linear collider was held at the Daresbury .... important to continue making contact with people in fields outside the accelerator community. Few experts at this meeting ...

A high stability wavelength-tunable narrow-linewidth and single-polarization erbium-doped fiber laser using a compound-cavity structure

International Nuclear Information System (INIS)

Feng, Ting; Yan, Fengping; Peng, Wanjing; Liu, Shuo; Tan, Siyu; Liang, Xiao; Wen, Xiaodong

2014-01-01

A high stability wavelength-tunable narrow-linewidth and single-polarization erbium-doped fiber laser using a compound-cavity structure is proposed and demonstrated experimentally. The compound-cavity is composed of a main-linear-cavity and a subring-cavity. Using a pump power of 150 mW, the optical signal to noise ratio of the laser output is as high as ∼67 dB; the wavelength and output power fluctuation are 0.7 pm and 0.07 dBm respectively in an experimental period of 1 h; the linewidth of the laser output is as narrow as 650 Hz; the degree of polarization of the laser output is stable at a value of 100.8% in 15 min and the polarization extinction ratio is as high as 30.57 dB; the wavelength-tunable range is as wide as ∼8.1 nm. The proposed fiber laser can be used in areas where high stability, narrow-linewidth, single-polarization and wide wavelength-tunable range are needed. (letter)

Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid

International Nuclear Information System (INIS)

Tavares, Henrique Dutra Simoes

2001-01-01

Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

Frequency stabilization of multiple lasers on a single medium-finesse cavity

Science.gov (United States)

Han, Chengyin; Zhou, Min; Gao, Qi; Li, Shangyan; Zhang, Shuang; Qiao, Hao; Ai, Di; Zhang, Mengya; Lou, Ge; Luo, Limeng; Xu, Xinye

2018-04-01

We present a simple, compact, and robust frequency stabilization system of three lasers operating at 649, 759, and 770 nm, respectively. These lasers are applied in experiments on ytterbium optical lattice clocks, for which each laser needs to have a linewidth of a few hundred or tens of kilohertz while maintaining a favorable long-term stability. Here, a single medium-finesse cavity is adopted as the frequency reference and the standard Pound-Drever-Hall technique is used to stabilize the laser frequencies. Based on the independent phase modulation, multiple-laser locking is demonstrated without mutual intervention. The locked lasers are measured to have a linewidth of 100 kHz and the residual frequency drift is about 78.5 Hz s-1. This kind of setup provides a construction that is much simpler than that in previous work.

Green high-power tunable external-cavity GaN diode laser at 515 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

Science.gov (United States)

Cartar, William; Mørk, Jesper; Hughes, Stephen

2017-08-01

We present a powerful computational approach to simulate the threshold behavior of photonic-crystal quantum-dot (QD) lasers. Using a finite-difference time-domain (FDTD) technique, Maxwell-Bloch equations representing a system of thousands of statistically independent and randomly positioned two-level emitters are solved numerically. Phenomenological pure dephasing and incoherent pumping is added to the optical Bloch equations to allow for a dynamical lasing regime, but the cavity-mediated radiative dynamics and gain coupling of each QD dipole (artificial atom) is contained self-consistently within the model. These Maxwell-Bloch equations are implemented by using Lumerical's flexible material plug-in tool, which allows a user to define additional equations of motion for the nonlinear polarization. We implement the gain ensemble within triangular-lattice photonic-crystal cavities of various length N (where N refers to the number of missing holes), and investigate the cavity mode characteristics and the threshold regime as a function of cavity length. We develop effective two-dimensional model simulations which are derived after studying the full three-dimensional passive material structures by matching the cavity quality factors and resonance properties. We also demonstrate how to obtain the correct point-dipole radiative decay rate from Fermi's golden rule, which is captured naturally by the FDTD method. Our numerical simulations predict that the pump threshold plateaus around cavity lengths greater than N =9 , which we identify as a consequence of the complex spatial dynamics and gain coupling from the inhomogeneous QD ensemble. This behavior is not expected from simple rate-equation analysis commonly adopted in the literature, but is in qualitative agreement with recent experiments. Single-mode to multimode lasing is also observed, depending on the spectral peak frequency of the QD ensemble. Using a statistical modal analysis of the average decay rates, we also

Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

OpenAIRE

Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

2004-01-01

We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

Very high repetition-rate electro-optical cavity-dumped Nd: YVO4 laser with optics and dynamics stabilities

Science.gov (United States)

Liu, Xuesong; Shi, Zhaohui; Huang, Yutao; Fan, Zhongwei; Yu, Jin; Zhang, Jing; Hou, Liqun

2015-02-01

In this paper, a very high repetition-rate, short-pulse, electro-optical cavity-dumped Nd: YVO4 laser is experimentally and theoretically investigated. The laser performance is optimized from two aspects. Firstly, the laser resonator is designed for a good thermal stability under large pump power fluctuation through optics methods. Secondly, dynamics simulation as well as experiments verifies that cavity dumping at very high repetition rate has better stability than medium/high repetition rate. At 30 W, 880 nm pump power, up to 500 kHz, constant 5 ns, stable 1064 nm fundamental-mode laser pulses can be obtained with 10 W average output power.

Stable and High OSNR Compound Linear-Cavity Single-Longitudinal-Mode Erbium-Doped Silica Fiber Laser Based on an Asymmetric Four-Cavity Structure

International Nuclear Information System (INIS)

Feng Ting; Yan Feng-Ping; Li Qi; Peng Wan-Jing; Feng Su-Chun; Wen Xiao-Dong; Tan Si-Yu; Liu Peng

2012-01-01

We propose a stable and high optical signal-to-noise ratio (OSNR) compound linear-cavity single-longitudinal-mode (SLM) erbium-doped silica fiber laser. It consists of three uniform fiber Bragg gratings (FBGs) and two fiber couplers to form a simple asymmetric four-cavity structure to select the longitudinal mode. The stable SLM operation at the wavelength of 1544.053 nm with a 3 dB bandwidth of 0.014 nm and an OSNR of ∼60 dB was verified experimentally. Under laboratory conditions, a power fluctuation performance of less than 0.05 dB for 5 h and wavelength variation of less than 0.01 nm for about 150 min is demonstrated. Finally, the characteristic of laser output power as a function of pump power is investigated. The proposed system provides a simple and cost-effective approach to realize a stable SLM fiber laser

Mode structure of delay-coupled semiconductor lasers: influence of the pump current

International Nuclear Information System (INIS)

Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

2005-01-01

We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

International Nuclear Information System (INIS)

Zhao Yiguang

1991-01-01

The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

Science.gov (United States)

Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

2010-02-01

Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

Real-time trace gas sensor using a multimode diode laser and multiple-line integrated cavity enhanced absorption spectroscopy.

Science.gov (United States)

Karpf, Andreas; Rao, Gottipaty N

2015-07-01

We describe and demonstrate a highly sensitive trace gas sensor based on a simplified design that is capable of measuring sub-ppb concentrations of NO2 in tens of milliseconds. The sensor makes use of a relatively inexpensive Fabry-Perot diode laser to conduct off-axis cavity enhanced spectroscopy. The broad frequency range of a multimode Fabry-Perot diode laser spans a large number of absorption lines, thereby removing the need for a single-frequency tunable laser source. The use of cavity enhanced absorption spectroscopy enhances the sensitivity of the sensor by providing a pathlength on the order of 1 km in a small volume. Off-axis alignment excites a large number of cavity modes simultaneously, thereby reducing the sensor's susceptibility to vibration. Multiple-line integrated absorption spectroscopy (where one integrates the absorption spectra over a large number of rovibronic transitions of the molecular species) further improves the sensitivity of detection. Relatively high laser power (∼400  mW) is used to compensate for the low coupling efficiency of a broad linewidth laser to the optical cavity. The approach was demonstrated using a 407 nm diode laser to detect trace quantities of NO2 in zero air. Sensitivities of 750 ppt, 110 ppt, and 65 ppt were achieved using integration times of 50 ms, 5 s, and 20 s respectively.

Alkali suppression within laser ion-source cavities and time structure of the laser ionized ion-bunches

CERN Document Server

Lettry, Jacques; Köster, U; Georg, U; Jonsson, O; Marzari, S; Fedosseev, V

2003-01-01

The chemical selectivity of the target and ion-source production system is an asset for Radioactive Ion-Beam (RIB) facilities equipped with mass separators. Ionization via laser induced multiple resonant steps Ionization has such selectivity. However, the selectivity of the ISOLDE Resonant Ionization Laser Ion-Source (RILIS), where ionization takes place within high temperature refractory metal cavities, suffers from unwanted surface ionization of low ionization potential alkalis. In order to reduce this type of isobaric contaminant, surface ionization within the target vessel was used. On-line measurements of the efficiency of this method is reported, suppression factors of alkalis up to an order of magnitude were measured as a function of their ionization potential. The time distribution of the ion bunches produced with the RILIS was measured for a variety of elements and high temperature cavity materials. While all ions are produced within a few nanoseconds, the ion bunch sometimes spreads over more than 1...

Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

DEFF Research Database (Denmark)

Champagne, A.; Camel, J.; Maciejko, R.

2002-01-01

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

Transient thermal analysis of semiconductor diode lasers under pulsed operation

Science.gov (United States)

Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.

2017-02-01

Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

High efficiency and high-energy intra-cavity beam shaping laser

International Nuclear Information System (INIS)

Yang, Hailong; Meng, Junqing; Chen, Weibiao

2015-01-01

We present a technology of intra-cavity laser beam shaping with theory and experiment to obtain a flat-top-like beam with high-pulse energy. A radial birefringent element (RBE) was used in a crossed Porro prism polarization output coupling resonator to modulate the phase delay radially. The reflectively of a polarizer used as an output mirror was variable radially. A flat-top-like beam with 72.5 mJ, 11 ns at 20 Hz was achieved by a side-pumped Nd:YAG zigzag slab laser, and the optical-to-optical conversion efficiency was 17.3%. (paper)

High efficiency and high-energy intra-cavity beam shaping laser

Science.gov (United States)

Yang, Hailong; Meng, Junqing; Chen, Weibiao

2015-09-01

We present a technology of intra-cavity laser beam shaping with theory and experiment to obtain a flat-top-like beam with high-pulse energy. A radial birefringent element (RBE) was used in a crossed Porro prism polarization output coupling resonator to modulate the phase delay radially. The reflectively of a polarizer used as an output mirror was variable radially. A flat-top-like beam with 72.5 mJ, 11 ns at 20 Hz was achieved by a side-pumped Nd:YAG zigzag slab laser, and the optical-to-optical conversion efficiency was 17.3%.

Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

DEFF Research Database (Denmark)

Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

1999-01-01

We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

NARCIS (Netherlands)

Yabre, G.S.

1998-01-01

In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

Dynamics of InGaN tandem blue-violet semiconductor lasers

International Nuclear Information System (INIS)

Antohi, I.; Rusu, S.S.; Tronciu, V.Z.

2013-01-01

Full text: Blue-violet semiconductor lasers have received much attention because of their promise for high-density optical storage applications. In particular, blue-violet laser diodes operating at 400 nm are required for BD- systems and for use in medicine, biology, color printers and monitors, etc, In recent years, numerous fabrication methods have been proposed and developed for blue lasers with CW and self-pulsating operations and the lifetime of such lasers has been increased to over 15000 h. Recently, we have reported self-pulsation and excitable behaviour for an InGaN laser with a p-type saturable absorber, and SP in the frequency range from 1.6 to 2.9 GHz has been achieved with such lasers. In this paper, we present an investigation of the dynamics of tandem 400 nm blue-violet lasers with setup presented in Fig.1a. A particular feature of the devices is the connection of the contacts of the SA, to reduce the carrier lifetime in the SA with the intention of producing self-pulsation and excitability. We examine the laser dynamics in terms of bifurcation diagrams. A typical calculation of bifurcation for the periodic solution is shown in Fig. 1b. This figure shows the dependence of the peak of the photon number on the injected.

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

Science.gov (United States)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers.

Science.gov (United States)

Eigenwillig, Christoph M; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R; Klein, Thomas; Jirauschek, Christian; Huber, Robert

2013-01-01

Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

DEFF Research Database (Denmark)

Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Tidemand-Lichtenberg, Peter

2010-01-01

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM00 power of 800 mW with 65% slope...... efficiency is obtained, the highest reported TEM00 power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published...

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao

2017-02-07

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

Generation of picosecond pulses and frequency combs in actively mode locked external ring cavity quantum cascade lasers

International Nuclear Information System (INIS)

Wójcik, Aleksander K.; Belyanin, Alexey; Malara, Pietro; Blanchard, Romain; Mansuripur, Tobias S.; Capasso, Federico

2013-01-01

We propose a robust and reliable method of active mode locking of mid-infrared quantum cascade lasers and develop its theoretical description. Its key element is the use of an external ring cavity, which circumvents fundamental issues undermining the stability of mode locking in quantum cascade lasers. We show that active mode locking can give rise to the generation of picosecond pulses and phase-locked frequency combs containing thousands of the ring cavity modes

Fast physical random bit generation with chaotic semiconductor lasers

Science.gov (United States)

Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter

2008-12-01

Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

On the use of a chirped Bragg grating as a cavity mirror of a picosecond Nd : YAG laser

Energy Technology Data Exchange (ETDEWEB)

Zubko, A E; Shashkov, E V; Smirnov, A V; Vorob' ev, N S [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation); Smirnov, V I [OptiGrate Corp., 562 South Econ Circle, Oviedo, Florida 32765-4311 (United States)

2016-02-28

The first experimental evidence is presented that the use of a chirped volume Bragg grating (CVBG) as a cavity mirror of a Q-switched picosecond Nd : YAG laser with self-mode-locking leads to significant changes in the temporal parameters of the laser output. Measurements have been performed at two positions of the CVBG: with the grating placed so that shorter wavelengths reflected from its front part lead longer wavelengths or with the grating rotated through 180°, so that longer wavelengths are reflected first. In the former case, the duration of individual pulses in a train increased from ∼35 to ∼300 ps, whereas the pulse train shape and duration remained the same as in the case of a conventional laser with a mirror cavity. In the latter case, the full width at half maximum of pulse trains increased from ∼70 ns (Nd : YAG laser with a mirror cavity) to ∼1 ms, and the duration of individual pulses increased from 35 ps to ∼1.2 ns, respectively, which is more typical of free-running laser operation. (laser crystals and braggg ratings)

Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

NARCIS (Netherlands)

Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.

2002-01-01

We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers: A novel technique for ultratrace gas analysis and high-resolution spectroscopy.

Science.gov (United States)

Hippler, Michael; Mohr, Christian; Keen, Katherine A; McNaghten, Edward D

2010-07-28

Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers (OF-CERPAS) is introduced as a novel technique for ultratrace gas analysis and high-resolution spectroscopy. In the scheme, a single-mode cw diode laser (3 mW, 635 nm) is coupled into a high-finesse linear cavity and stabilized to the cavity by optical feedback. Inside the cavity, a build-up of laser power to at least 2.5 W occurs. Absorbing gas phase species inside the cavity are detected with high sensitivity by the photoacoustic effect using a microphone embedded in the cavity. To increase sensitivity further, coupling into the cavity is modulated at a frequency corresponding to a longitudinal resonance of an organ pipe acoustic resonator (f=1.35 kHz and Q approximately 10). The technique has been characterized by measuring very weak water overtone transitions near 635 nm. Normalized noise-equivalent absorption coefficients are determined as alpha approximately 4.4x10(-9) cm(-1) s(1/2) (1 s integration time) and 2.6x10(-11) cm(-1) s(1/2) W (1 s integration time and 1 W laser power). These sensitivities compare favorably with existing state-of-the-art techniques. As an advantage, OF-CERPAS is a "zero-background" method which increases selectivity and sensitivity, and its sensitivity scales with laser power.

A multi-wavelength (u.v. to visible) laser system for early detection of oral cancer

Science.gov (United States)

Najda, S. P.; Perlin, P.; Leszczyński, M.; Slight, T. J.; Meredith, W.; Schemmann, M.; Moseley, H.; Woods, J. A.; Valentine, R.; Kalra, S.; Mossey, P.; Theaker, E.; Macluskey, M.; Mimnagh, G.; Mimnagh, W.

2015-03-01

A multi-wavelength (360nm - 440nm), real-time Photonic Cancer Detector (PCD) optical system based on GaN semiconductor laser technology is outlined. A proof of concept using blue laser technology for early detection of cancer has already been tested and proven for esophageal cancer. This concept is expanded to consider a wider range of wavelengths and the PCD will initially be used for early diagnosis of oral cancers. The PCD creates an image of the oral cavity (broad field white light detection) and maps within the oral cavity any suspicious lesions with high sensitivity using a narrow field tunable detector.

An asymmetric integrated extended cavity 20GHz mode-locked quantum well ring laser fabricated in the JePPIX technology platform

NARCIS (Netherlands)

Tahvili, M.S.; Barbarin, Y.; Ambrosius, H.P.M.M.; Smit, M.K.; Bente, E.A.J.M.; Leijtens, X.J.M.; Vries, de T.; Smalbrugge, E.; Bolk, J.

2011-01-01

In this paper, we present mode-locked operation of a monolithic 20GHz integrated extended cavity ring laser. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section (SOA), a separate 40µm long saturable absorber (SA) section, passive waveguide sections (shallow and deep

An ultra-wideband tunable multi-wavelength Brillouin fibre laser based on a semiconductor optical amplifier and dispersion compensating fibre in a linear cavity configuration

International Nuclear Information System (INIS)

Zulkifli, M Z; Ahmad, H; Hassan, N A; Jemangin, M H; Harun, S W

2011-01-01

A multi-wavelength Brillouin fibre laser (MBFL) with an ultra-wideband tuning range from 1420 nm to 1620 nm is demonstrated. The MBFL uses an ultra-wideband semiconductor optical amplifier (SOA) and a dispersion compensating fibre (DCF) as the linear gain medium and nonlinear gain medium, respectively. The proposed MBFL has a wide tuning range covering the short (S-), conventional (C-) and long (L-) bands with a wavelength spacing of 0.08 nm, making it highly suitable for DWDM system applications. The output power of the observed Brillouin Stokes ranges approximately from -5.94 dBm to -0.41 dBm for the S-band, from -4.34 dBm to 0.02 dBm for the C-band and from -2.19 dBm to 0.39 dBm for the L-band. The spacing between each adjacent wavelengths of all the three bands is about 0.08 nm, which is approximately 10.7 GHz for the frequency domain. (lasers)

Laser of optical fiber composed by two coupled cavities: application as optical fiber sensor; Laser de fibra optica compuesto por dos cavidades acopladas: aplicacion como sensor de fibra optica

Energy Technology Data Exchange (ETDEWEB)

Vazquez S, R.A.; Kuzin, E.A.; Ibarra E, B. [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), A.P. 51 y 216, 72000 Puebla (Mexico); May A, M. [Universidad Autonoma del Carmen (UNACAR) Av. 56 No. 4 por Av. Concordia, Campeche (Mexico); Shlyagin, M.; Marquez B, I. [Centro de Investigacion Cientifica y de Ensenanza Superior de Ensenada (CICESE), 22860 Ensenada, Baja California (Mexico)]. e-mail: ravsa100@hotmail.com

2004-07-01

We show an optical fiber laser sensor which consist of two cavities coupled and three fiber Bragg gratings. We used one Bragg grating (called reference) and two Bragg gratings (called sensors), which have the lower reflection wavelength. The reference grating with the two sensors grating make two cavities: first one is the internal cavity which has 4230 m of length and the another one is the external cavity which has 4277 m of length. Measuring the laser beating frequency for a resonance cavity and moving the frequency peaks when the another cavity is put in resonance, we prove that the arrangement can be used as a two points sensor for determining the difference of temperature or stress between these two points. (Author)

Optical feedback in dfb quantum cascade laser for mid-infrared cavity ring-down spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Terabayashi, Ryohei, E-mail: terabayashi.ryouhei@h.mbox.nagoya-u.ac.jp; Sonnenschein, Volker, E-mail: volker@nagoya-u.jp; Tomita, Hideki, E-mail: tomita@nagoya-u.jp; Hayashi, Noriyoshi, E-mail: hayashi.noriyoshi@h.mbox.nagoya-u.ac.jp; Kato, Shusuke, E-mail: katou.shuusuke@f.mbox.nagoya-u.ac.jp; Jin, Lei, E-mail: kin@nuee.nagoya-u.ac.jp; Yamanaka, Masahito, E-mail: yamanaka@nuee.nagoya-u.ac.jp; Nishizawa, Norihiko, E-mail: nishizawa@nuee.nagoya-u.ac.jp [Nagoya University, Department of Quantum Engineering, Graduate School of Engineering (Japan); Sato, Atsushi, E-mail: atsushi.sato@sekisui.com; Nozawa, Kohei, E-mail: kohei.nozawa@sekisui.com; Hashizume, Kenta, E-mail: kenta.hashizume@sekisui.com; Oh-hara, Toshinari, E-mail: toshinari.ohara@sekisui.com [Sekisui Medical Co., Ltd., Drug Development Solutions Center (Japan); Iguchi, Tetsuo, E-mail: t-iguchi@nucl.nagoya-u.ac.jp [Nagoya University, Department of Quantum Engineering, Graduate School of Engineering (Japan)

2017-11-15

A simple external optical feedback system has been applied to a distributed feedback quantum cascade laser (DFB QCL) for cavity ring-down spectroscopy (CRDS) and a clear effect of feedback was observed. A long external feedback path length of up to 4m can decrease the QCL linewidth to around 50kHz, which is of the order of the transmission linewidth of our high finesse ring-down cavity. The power spectral density of the transmission signal from high finesse cavity reveals that the noise at frequencies above 20kHz is reduced dramatically.

A novel near real-time laser scanning device for geometrical determination of pleural cavity surface.

Science.gov (United States)

Kim, Michele M; Zhu, Timothy C

2013-02-02

During HPPH-mediated pleural photodynamic therapy (PDT), it is critical to determine the anatomic geometry of the pleural surface quickly as there may be movement during treatment resulting in changes with the cavity. We have developed a laser scanning device for this purpose, which has the potential to obtain the surface geometry in real-time. A red diode laser with a holographic template to create a pattern and a camera with auto-focusing abilities are used to scan the cavity. In conjunction with a calibration with a known surface, we can use methods of triangulation to reconstruct the surface. Using a chest phantom, we are able to obtain a 360 degree scan of the interior in under 1 minute. The chest phantom scan was compared to an existing CT scan to determine its accuracy. The laser-camera separation can be determined through the calibration with 2mm accuracy. The device is best suited for environments that are on the scale of a chest cavity (between 10cm and 40cm). This technique has the potential to produce cavity geometry in real-time during treatment. This would enable PDT treatment dosage to be determined with greater accuracy. Works are ongoing to build a miniaturized device that moves the light source and camera via a fiber-optics bundle commonly used for endoscopy with increased accuracy.

Stability of a laser cavity with non-parabolic phase transformation elements

CSIR Research Space (South Africa)

Litvin, IA

2013-05-01

Full Text Available aberration in high–power transversally pumped laser rods,” Opt. Commun. 259(1), 223–235 (2006). 14. A. G. Fox and T. Li, “Resonant Modes in a Maser Interferometer,” Bell Syst. Tech. J. 40, 453–488 (1961). 15. O. Svelto, Principles of Lasers, 3rd edition.... Consequently the intra-cavity implementation of any non-conventional phase transformation elements or taking into account the thermal lensing which in general has a non-parabolic phase transformation [13], leads to a solution of the complicated Fox...

Active mode locking of quantum cascade lasers in an external ring cavity.

Science.gov (United States)

Revin, D G; Hemingway, M; Wang, Y; Cockburn, J W; Belyanin, A

2016-05-05

Stable ultrashort light pulses and frequency combs generated by mode-locked lasers have many important applications including high-resolution spectroscopy, fast chemical detection and identification, studies of ultrafast processes, and laser metrology. While compact mode-locked lasers emitting in the visible and near infrared range have revolutionized photonic technologies, the systems operating in the mid-infrared range where most gases have their strong absorption lines, are bulky and expensive and rely on nonlinear frequency down-conversion. Quantum cascade lasers are the most powerful and versatile compact light sources in the mid-infrared range, yet achieving their mode-locked operation remains a challenge, despite dedicated effort. Here we report the demonstration of active mode locking of an external-cavity quantum cascade laser. The laser operates in the mode-locked regime at room temperature and over the full dynamic range of injection currents.

Laser Rate Equation Based Filtering for Carrier Recovery in Characterization and Communication

DEFF Research Database (Denmark)

Piels, Molly; Iglesias Olmedo, Miguel; Xue, Weiqi

2015-01-01

We formulate a semiconductor laser rate equationbased approach to carrier recovery in a Bayesian filtering framework. Filter stability and the effect of model inaccuracies (unknown or un-useable rate equation coefficients) are discussed. Two potential application areas are explored: laser...... characterization and carrier recovery in coherent communication. Two rate equation based Bayesian filters, the particle filter and extended Kalman filter, are used in conjunction with a coherent receiver to measure frequency noise spectrum of a photonic crystal cavity laser with less than 20 nW of fiber...

Rapid-swept CW cavity ring-down laser spectroscopy for carbon isotope analysis

International Nuclear Information System (INIS)

Tomita, Hideki; Watanabe, Kenichi; Takiguchi, Yu; Kawarabayashi, Jun; Iguchi, Tetsuo

2006-01-01

With the aim of developing a portable system for an in field isotope analysis, we investigate an isotope analysis based on rapid-swept CW cavity ring-down laser spectroscopy, in which the concentration of a chemical species is derived from its photo absorbance. Such a system can identify the isotopomer and still be constructed as a quite compact system. We have made some basic experimental measurements of the overtone absorption lines of carbon dioxide ( 12 C 16 O 2 , 13 C 16 O 2 ) by rapid-swept cavity ring-down spectroscopy with a CW infrared diode laser at 6,200 cm -1 (1.6 μm). The isotopic ratio has been obtained as (1.07±0.13)x10 -2 , in good agreement with the natural abundance within experimental uncertainty. The detection sensitivity in absorbance has been estimated to be 3x10 -8 cm -1 . (author)

Tunable single and dual mode operation of an external cavity quantum-dot injection laser

International Nuclear Information System (INIS)

Biebersdorf, A; Lingk, C; De Giorgi, M; Feldmann, J; Sacher, J; Arzberger, M; Ulbrich, C; Boehm, G; Amann, M-C; Abstreiter, G

2003-01-01

We investigate quantum-dot (QD) lasers in an external cavity using Littrow and Littman configurations. Here, we report on a continuously tunable QD laser with a broad tuning range from 1047 to 1130 nm with high stability and efficient side mode suppression. The full-width at half-maximum of the laser line is 0.85 nm determined mainly by the quality of the external grating. This laser can be operated in a dual-mode modus, where the mode-spacing can be tuned continuously between 1.1 and 34 nm. Simultaneous emission of the two laser modes is shown by sum frequency generation experiments

COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

DEFF Research Database (Denmark)

2009-01-01

The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

Two-photon cavity solitons in a laser: radiative profiles, interaction and control

Energy Technology Data Exchange (ETDEWEB)

Serrat, C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 1, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 1, E-08222 Terrassa (Spain); Vilaseca, R [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 1, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Center for Applied Mathematics, Cornell University, Ithaca, NY 14853 (United States); Brambilla, M [Dipartimento di Fisica and INFM, Politecnico di Bari, Via E. Orabona 4, I-70126 Bari (Italy)

2004-05-01

We study the properties of two-photon cavity solitons that appear in a broad-area cascade laser. These vectorial solitons consist of islands of two-photon emission emerging over a background of single-photon emission. Analysis of their structural properties reveals singular features such as their short distance radiation of outgoing waves, which can be interpreted in terms of the soliton frequency profile. However, the phase of these solitons is not determined by any external factor, which influences the way in which the structures can be written and erased. We also examine ways of controlling the cavity-soliton position, and analyse the interaction between neighbouring cavity solitons. Finally, investigation of the parameter dependence of these structures shows a route from soliton-dominated to defect-mediated turbulence.

Pump-probe differencing technique for cavity-enhanced, noise-canceling saturation laser spectroscopy.

Science.gov (United States)

de Vine, Glenn; McClelland, David E; Gray, Malcolm B; Close, John D

2005-05-15

We present an experimental technique that permits mechanical-noise-free, cavity-enhanced frequency measurements of an atomic transition and its hyperfine structure. We employ the 532-nm frequency-doubled output from a Nd:YAG laser and an iodine vapor cell. The cell is placed in a folded ring cavity (FRC) with counterpropagating pump and probe beams. The FRC is locked with the Pound-Drever-Hall technique. Mechanical noise is rejected by differencing the pump and probe signals. In addition, this differenced error signal provides a sensitive measure of differential nonlinearity within the FRC.

Center frequency shift and reduction of feedback in directly modulated external cavity lasers

DEFF Research Database (Denmark)

Schiellerup, G.; Pedersen, Rune Johan Skullerud; Olesen, H.

1989-01-01

It is shown experimentally and theoretically that a center frequency shift occurs when an external cavity laser is directly modulated. The shift can be observed even when the frequency deviation is small compared to the roundtrip frequency of the external cavity and can qualitatively be explained...... by a reduction in the effective feedback level due to modulation. The frequency shift was measured as a function of modulation frequency and current, and frequency shifts up to 350 MHz were observed...

All-optical logic gates and wavelength conversion via the injection locking of a Fabry-Perot semiconductor laser

Science.gov (United States)

Harvey, E.; Pochet, M.; Schmidt, J.; Locke, T.; Naderi, N.; Usechak, N. G.

2013-03-01

This work investigates the implementation of all-optical logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode, and an optical band-pass filter. The DFB lasers are externally modulated to represent logic inputs into the cavity of the multi-mode Fabry-Perot slave laser. The input DFB (master) lasers' wavelengths are aligned with the longitudinal modes of the Fabry-Perot slave laser and their optical power is used to modulate the injection conditions in the Fabry-Perot slave laser. The optical band-pass filter is used to select a Fabry- Perot mode that is either suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity-mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter — a key component in advanced wavelength-division multiplexing networks. As a result of this experimental investigation, a more comprehensive understanding of the locking parameters involved in injecting multiple lasers into a multi-mode cavity and the logic transition time is achieved. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

Science.gov (United States)

Jornod, Nayara; Gürel, Kutan; Wittwer, Valentin J.; Brochard, Pierre; Hakobyan, Sargis; Schilt, Stéphane; Waldburger, Dominik; Keller, Ursula; Südmeyer, Thomas

2018-02-01

We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of 30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

DEFF Research Database (Denmark)

Danielsen, Magnus

1976-01-01

Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

DEFF Research Database (Denmark)

Champagne, A.; Camel, J.; Maciejko, R.

2002-01-01

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

The astigmatism factor for semiconductor injection lasers

International Nuclear Information System (INIS)

Zhao Yiguang; Guo Changzhi

1988-03-01

The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

An electrically injected rolled-up semiconductor tube laser

Energy Technology Data Exchange (ETDEWEB)

Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

2015-01-12

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

DEFF Research Database (Denmark)

Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal

2009-01-01

A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser......, the generated signals with complex shape in time domain match the Federal Communications Commission (FCC) mask in the frequency domain. Experimental results using a DML agree well with simulation predictions. Furthermore, we also experimentally demonstrate the generation of FCC compliant UWB signals...

Characterization technique for long optical fiber cavities based on beating spectrum of multi-longitudinal mode fiber laser and beating spectrum in the RF domain

Science.gov (United States)

Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2016-03-01

The characterization of long fiber cavities is essential for many systems to predict the system practical performance. The conventional techniques for optical cavity characterization are not suitable for long fiber cavities due to the cavities' small free spectral ranges and due to the length variations caused by the environmental effects. In this work, we present a novel technique to characterize long fiber cavities using multi-longitudinal mode fiber laser source and RF spectrum analyzer. The fiber laser source is formed in a ring configuration, where the fiber laser cavity length is chosen to be 15 km to ensure that the free spectral range is much smaller than the free spectral range of the characterized passive fiber cavities. The method has been applied experimentally to characterize ring cavities with lengths of 6.2 m and 2.4 km. The results are compared to theoretical predictions with very good agreement.

Intra-pulse laser absorption sensor with cavity enhancement for oxidation experiments in a rapid compression machine

KAUST Repository

Nasir, Ehson Fawad

2018-05-23

A sensor based on a mid-IR pulsed quantum cascade laser (QCL) and off-axis cavity enhanced absorption spectroscopy (OA-CEAS) has been developed for highly sensitive concentration measurements of carbon monoxide (CO) in a rapid compression machine. The duty cycle and the pulse repetition rate of the laser were optimized for increased tuning range, high chirp rate, and small line width to achieve effective laser-cavity coupling. This enabled spectrally resolved CO line-shape measurements at high pressures (P ~10 bar). A gain factor of 133 and a time resolution of 10 μs were demonstrated. CO concentration-time profiles during the oxidation of highly dilute n-octane/air mixtures were recorded, illustrating new opportunities in RCM experiments for chemical kinetics.

Cavity-enhanced spectroscopies

CERN Document Server

van Zee, Roger

2003-01-01

""Cavity-Enhanced Spectroscopy"" discusses the use of optical resonators and lasers to make sensitive spectroscopic measurements. This volume is written by the researcchers who pioneered these methods. The book reviews both the theory and practice behind these spectroscopic tools and discusses the scientific discoveries uncovered by these techniques. It begins with a chapter on the use of optical resonators for frequency stabilization of lasers, which is followed by in-depth chapters discussing cavity ring-down spectroscopy, frequency-modulated, cavity-enhanced spectroscopy, intracavity spectr

The analytical approach to optimization of active region structure of quantum dot laser

International Nuclear Information System (INIS)

Korenev, V V; Savelyev, A V; Zhukov, A E; Omelchenko, A V; Maximov, M V

2014-01-01

Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value

The analytical approach to optimization of active region structure of quantum dot laser

Science.gov (United States)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2014-10-01

Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value.

The dynamical complexity of optically injected semiconductor lasers

International Nuclear Information System (INIS)

Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

2005-01-01

This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

Laser polishing of niobium for application to superconducting radio frequency cavities

International Nuclear Information System (INIS)

Singaravelu, Senthil; Klopf, John Michael; Xu, Chen; Krafft, Geoffrey; Kelley, Michael J.

2012-01-01

Superconducting radio frequency niobium cavities are at the heart of an increasing number of particle accelerators. Their performance is dominated by a several nanometer thick layer at the interior surface. Maximizing the smoothness of this surface is critical, and aggressive chemical treatments are now employed to this end. The authors describe laser-induced surface melting as an alternative 'greener' approach. Selection of laser parameters guided by modeling achieved melting that reduced the surface roughness from the fabrication process. The resulting topography was examined by scanning electron microscope and atomic force microscope (AFM). Plots of power spectral density computed from the AFM data give further insight into the effect of laser melting on the topography of the mechanically polished (only) niobium

VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

CERN Document Server

2013-01-01

The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

2012-01-01

Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

Numerical Investigation of Vertical Cavity Lasers With High-Contrast Gratings Using the Fourier Modal Method

DEFF Research Database (Denmark)

Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

2016-01-01

We explore the use of a modal expansion technique, Fourier modal method (FMM), for investigating the optical properties of vertical cavities employing high-contrast gratings (HCGs). Three techniques for determining the resonance frequency and quality factor (Q-factor) of a cavity mode are compared......, the scattering losses of several HCG-based vertical cavities with inplane heterostructures which have promising prospects for fundamental physics studies and on-chip laser applications, are investigated. This type of parametric study of 3D structures would be numerically very demanding using spatial...

Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

International Nuclear Information System (INIS)

Shi, L W; Chen, Y H; Xu, B; Wang, Z C; Jiao, Y H; Wang, Z G

2007-01-01

In this review, the potential of mode-locked lasers based on advanced quantum-dot (QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects. (topical review)

Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability

Science.gov (United States)

Parali, Ufuk; Sheng, Xin; Minassian, Ara; Tawy, Goronwy; Sathian, Juna; Thomas, Gabrielle M.; Damzen, Michael J.

2018-03-01

We report the first experimental demonstration of a wavelength tunable passively Q-switched red-diode-end pumped Alexandrite laser using a semiconductor saturable absorber mirror (SESAM). We present the results of the study of passive SESAM Q-switching and wavelength-tuning in continuous diode-pumped Alexandrite lasers in both linear cavity and X-cavity configurations. In the linear cavity configuration, pulsed operation up to 27 kHz repetition rate in fundamental TEM00 mode was achieved and maximum average power was 41 mW. The shortest pulse generated was 550 ns (FWHM) and the Q-switched wavelength tuning band spanned was between 740 nm and 755 nm. In the X-cavity configuration, a higher average power up to 73 mW, and obtained with higher pulse energy 6 . 5 μJ at 11.2 kHz repetition rate, in fundamental TEM00 mode with excellent spatial quality M2 < 1 . 1. The Q-switched wavelength tuning band spanned was between 775 nm and 781 nm.

Simultaneous multi-laser, multi-species trace-level sensing of gas mixtures by rapidly swept continuous-wave cavity-ringdown spectroscopy.

Science.gov (United States)

He, Yabai; Kan, Ruifeng; Englich, Florian V; Liu, Wenqing; Orr, Brian J

2010-09-13

The greenhouse-gas molecules CO(2), CH(4), and H(2)O are detected in air within a few ms by a novel cavity-ringdown laser-absorption spectroscopy technique using a rapidly swept optical cavity and multi-wavelength coherent radiation from a set of pre-tuned near-infrared diode lasers. The performance of various types of tunable diode laser, on which this technique depends, is evaluated. Our instrument is both sensitive and compact, as needed for reliable environmental monitoring with high absolute accuracy to detect trace concentrations of greenhouse gases in outdoor air.

Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

International Nuclear Information System (INIS)

Zhou, Shengqiang

2015-01-01

Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

Excitons in atomically thin 2D semiconductors and their applications

Science.gov (United States)

Xiao, Jun; Zhao, Mervin; Wang, Yuan; Zhang, Xiang

2017-06-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.

Quantum dash based single section mode locked lasers for photonic integrated circuits.

Science.gov (United States)

Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

2014-05-05

We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

Ultrawideband pulse generation based on overshooting effect in gain-switched semiconductor laser

DEFF Research Database (Denmark)

Torres-Company, V.; Prince, Kamau; Tafur Monroy, Idelfonso

2008-01-01

We demonstrate an alternative procedure to achieve ultrawideband (UWB) radio-frequency (RF) doublet impulses. It is based on the overshooting effect appearing by biasing a semiconductor laser close to the threshold with a large-amplitude signal. Specifically, with an optical bandpass filter...... a reliable, easy, and low-cost alternative for RF UWB impulse generation....

Laser Processing on the Surface of Niobium Superconducting Radio-Frequency Accelerator Cavities

Science.gov (United States)