WorldWideScience

Sample records for catalytic chemical vapor

  1. Catalytic Chemical Vapor Deposition Synthesis of Carbon Aerogels of High-Surface Area and Porosity

    Directory of Open Access Journals (Sweden)

    Armando Peña

    2012-01-01

    Full Text Available In this work carbon aerogels were synthesized by catalytic chemical vapor deposition method (CCVD. Ferrocene were employed as a source both of catalytic material (Fe and of carbon. Gaseous hydrogen and argon were used as reductant and carrier gas, respectively. The products of reaction were collected over alumina. The morphology and textural properties of the soot produced in the reaction chamber were investigated using Scanning Electron Microscopy, High-Resolution Transmission Electron Microscopy, X-ray photoelectron spectroscopy, and N2 physisorption (BET and BHJ methods. After the evaluation of the porous structure of the synthesized products, 780 ± 20 m2/g of SBET and 0.55 ± 0.02 cm3/g of VBJH were found. The presence of iron carbide and the partial oxidation of carbon nanostructures were revealed by XPS.

  2. Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

    Institute of Scientific and Technical Information of China (English)

    Huajun ZHENG; Chunan MA; Jianguo HUANG; Guohua LI

    2005-01-01

    Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20~35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).

  3. Synthesis of multi-walled carbon nanotubes using CoMnMgO catalysts through catalytic chemical vapor deposition

    Science.gov (United States)

    Yang, Wen; Feng, Yan-Yan; Jiang, Cheng-Fa; Chu, Wei

    2014-12-01

    The CoMgO and CoMnMgO catalysts are prepared by a co-precipitation method and used as the catalysts for the synthesis of carbon nanotubes (CNTs) through the catalytic chemical vapor deposition (CCVD). The effects of Mn addition on the carbon yield and structure are investigated. The catalysts are characterized by temperature programmed reduction (TPR) and X-ray diffraction (XRD) techniques, and the synthesized carbon materials are characterized by transmission electron microscopy (TEM) and thermo gravimetric analysis (TG). TEM measurement indicates that the catalyst CoMgO enclosed completely in the produced graphite layer results in the deactivation of the catalyst. TG results suggest that the CoMnMgO catalyst has a higher selectivity for CNTs than CoMgO. Meanwhile, different diameters of CNTs are synthesized by CoMnMgO catalysts with various amounts of Co content, and the results show that the addition of Mn avoids forming the enclosed catalyst, prevents the formation of amorphous carbon, subsequently promotes the growth of CNTs, and the catalyst with decreased Co content is favorable for the synthesis of CNTs with a narrow diameter distribution. The CoMnMgO catalyst with 40% Co content has superior catalytic activity for the growth of carbon nanotubes.

  4. Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chin-Lung Cheng

    2011-01-01

    Full Text Available Carbon nanotubes (CNTs have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs formed on the SiO2/n-type Si(100 stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2 as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage (Id-Vd, drain current versus gate voltage (Id-Vg, mobility, subthreshold slope (SS, and transconductance (Gm, were obtained.

  5. Fluid catalytic cracking of biomass pyrolysis vapors

    Energy Technology Data Exchange (ETDEWEB)

    Mante, Ofei Daku [Virginia Polytechnic Institute and State University, Biological Systems Engineering, Blacksburg, VA (United States); Agblevor, Foster A. [Utah State University, Biological Engineering, Logan, UT (United States); McClung, Ron [BASF Inc, Florham, NJ (United States)

    2011-12-15

    Catalytic cracking of pyrolysis oils/vapors offers the opportunity of producing bio-oils which can potentially be coprocessed with petroleum feedstocks in today's oil refinery to produce transportation fuel and chemicals. Catalyst properties and process conditions are critical in producing and maximizing desired product. In our studies, catalyst matrix (kaolin) and two commercial fluid catalytic cracking (FCC) catalysts, FCC-H and FCC-L, with different Y-zeolite contents were investigated. The catalytic cracking of hybrid poplar wood was conducted in a 50-mm bench-scale bubbling fluidized-bed pyrolysis reactor at 465 C with a weight hourly space velocity of 1.5 h{sup -1}. The results showed that the yields and quality of the bio-oils was a function of the Y-zeolite content of the catalyst. The char/coke yield was highest for the higher Y-zeolite catalyst. The organic liquid yields decreased inversely with increase in zeolite content of the catalyst whereas the water and gas yields increased. Analysis of the oils by both Fourier-transform infrared and {sup 13}C-nuclear magnetic resonance indicated that the catalyst with higher zeolite content (FCC-H) was efficient in the removal of compounds like levoglucosan, carboxylic acids and the conversion of methoxylated phenols to substituted phenols and benzenediols. The cracking of pyrolysis products by kaolin suggests that the activity of the FCC catalyst on biomass pyrolysis vapors can be attributed to both Y-zeolite and matrix. The FCC-H catalyst produced much more improved oil. The oil was low in oxygen (22.67 wt.%), high in energy (29.79 MJ/kg) and relatively stable over a 12-month storage period. (orig.)

  6. A nucleation and growth model of vertically-oriented carbon nanofibers or nanotubes by plasma-enhanced catalytic chemical vapor deposition.

    Science.gov (United States)

    Cojocaru, C S; Senger, A; Le Normand, F

    2006-05-01

    Carbon nanofibers are grown by direct current and hot filaments-activated catalytic chemical vapor deposition while varying the power of the hot filaments. Observations of these carbon nanofibers vertically oriented on a SiO2 (8 nm thick)/Si(100) substrate covered with Co nanoparticles (10-15 nm particle size) by Scanning Electron and Transmission Electron Microscopies show the presence of a graphitic "nest" either on the surface of the substrate or at the end of the specific nanofiber that does not encapsulate the catalytic particle. Strictly in our conditions, the activation by hot filaments is required to grow nanofibers with a C2H2 - H2 gas mixture, as large amounts of amorphous carbon cover the surface of the substrate without using hot filaments. From these observations as well as data of the literature, it is proposed that the nucleation of carbon nanofibers occurs through a complex process involving several steps: carbon concentration gradient starting from the catalytic carbon decomposition and diffusion from the surface of the catalytic nanoparticles exposed to the activated gas and promoted by energetic ionic species of the gas phase; subsequent graphitic condensation of a "nest" at the interface of the Co particle and substrate. The large concentration of highly reactive hydrogen radicals mainly provided by activation with hot filaments precludes further spreading out of this interfacial carbon nest over the entire surface of the substrate and thus selectively orientates the growth towards the condensation of graphene over facets that are perpendicular to the surface. Carbon nanofibers can then be grown within the well-known Vapor-Liquid-Solid process. Thus the effect of energetic ions and highly reactive neutrals like atomic hydrogen in the preferential etching of carbon on the edge of graphene shells and on the broadening of the carbon nanofiber is underlined.

  7. Structural and Thermal Behaviours of Iron-filled Align Carbon Nano tubes Formulated by Two-stage Catalytic Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    This paper presents finding on the one-dimensional purified align carbon nano tubes (ACNT) are prepared using botanical hydrocarbon: camphor powder in a two-stage catalytic chemical vapor deposition. For the first time, the hydrocarbon source and catalyst are patterning at different alumina boats in the system. The growth of ACNT has achieved free standing formation with higher aspect ratio. In contrast, unpurified carbon nano tubes have some drawbacks and require some treatments to fully utilize their capabilities in various applications. The results reveal that the crystallinity and purity of functionalized align carbon nano tubes is increase after wet-chemical technique and heat treatment process. In this paper, the results provide evidence showing that it is good agreement with the field emission scanning electron microscopy, micro-Raman and thermogravimetric analysis. (author)

  8. A temperature window for the synthesis of single-walled carbon nanotubes by catalytic chemical vapor deposition of CH4 over Mo-Fe/MgO catalyst

    Institute of Scientific and Technical Information of China (English)

    OUYANG Yu; CHEN LI; LIU Qi-xin; FANG Yan

    2008-01-01

    A temperature window of single-walled carbon nanotubes(SWCNTs)growth has been studied by Raman spectroscopy.The results presented when temperature lowcr than 750℃,there were few SWCNTs formed,and when temperature higher than 900℃,mass amorphous carbons were formed in the SWCNTs bundles due to the serf-decomposition of CH4.The temperature window of SWCNTs efficiently growth is between 800 and 900℃,and the optimum growth temperature is about 850℃.These results were supported by transmission electron microscope images of samples formed under different temperature.The temperature window is important for large-scale production of SWCNTs by catalytic chemical vapor deposition method.

  9. Catalytic Chemical Vapor Deposition of Methane to Carbon Nanotubes: Copper Promoted Effect of Ni/MgO Catalysts

    Directory of Open Access Journals (Sweden)

    Wen Yang

    2014-01-01

    Full Text Available The Ni/MgO and Ni-Cu/MgO catalysts were prepared by sol-gel method and used as the catalysts for synthesis of carbon nanotubes by thermal chemical vapor deposition. The effect of Cu on the carbon yield and structure was investigated, and the effects of calcination temperature and reaction temperature were also investigated. The catalysts and synthesized carbon materials were characterized by temperature programmed reduction (TPR, thermogravimetric analysis (TGA, and scanning electron microscopy (SEM. Results showed that the addition of Cu promoted the reduction of nickel species, subsequently improving the growth and yield of CNTs. Meanwhile, CNTs were synthesized by the Ni/MgO and Ni-Cu/MgO catalysts with various calcination temperatures and reaction temperatures, and results suggested that the obtained CNTs on Ni-Cu/MgO catalyst with the calcination temperature of 500°C and the reaction temperature of 650°C were of the greatest yield and quantity of 927%.

  10. Growth of carbon nanofiber coatings on nickel thin films on fused silica by catalytic thermal chemical vapor deposition: On the use of titanium, titanium–tungsten and tantalum as adhesion layers

    NARCIS (Netherlands)

    Thakur, D.B.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Lefferts, L.; Seshan, K.

    2009-01-01

    Coatings of carbon nanofiber (CNF) layers were synthesized on fused silica substrates using a catalytic thermal chemical vapor deposition process (C-TCVD). The effects of various adhesion layers–titanium, titanium–tungsten and tantalum–under the nickel thin film on the attachment of carbon nanofiber

  11. The role of catalytic nanoparticle pretreatment on the growth of vertically aligned carbon nanotubes by hot-filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki-Hwan; Gohier, Aurélien; Bourée, Jean Eric; Châtelet, Marc; Cojocaru, Costel-Sorin, E-mail: costel-sorin.cojocaru@polytechnique.edu

    2015-01-30

    The effect of atomic hydrogen assisted pre-treatment on the growth of vertically aligned carbon nanotubes using hot-filament chemical vapor deposition was investigated. Iron nanoparticle catalysts were formed on an aluminum oxide support layer by spraying of iron chloride salt solutions as catalyst precursor. It is found that pre-treatment time and process temperature tune the density as well as the shape and the structure of the grown carbon nanotubes. An optimum pre-treatment time can be found for the growth of long and well aligned carbon nanotubes, densely packed to each other. To provide insight on this behavior, the iron catalytic nanoparticles formed after the atomic hydrogen assisted pre-treatment were analyzed by atomic force microscopy. The relations between the size and the density of the as-formed catalyst and the as-grown carbon nanotube's structure and density are discussed. - Highlights: • Effect of the atomic hydrogen assisted pre-treatment on the growth of VACNT using hot-filament CVD. • Pre-treatment time and process temperature tune the density, the shape and the structure of the CNTs. • Correlations between size and density of the as-formed catalyst and the CNT’s structure and density. • Carbon nanotubes synthesized at low temperature down to 500 °C using spayed iron chloride salts. • Density of the CNT carpet adjusted by catalytic nanoparticle engineering.

  12. A Temperature Window for the Synthesis of Single-Walled Carbon Nanotubes by Catalytic Chemical Vapor Deposition of CH4over Mo2-Fe10/MgO Catalyst

    Directory of Open Access Journals (Sweden)

    Yu Ouyang

    2009-01-01

    Full Text Available Abstract A temperature window for the synthesis of single-walled carbon nanotubes by catalytic chemical vapor deposition of CH4over Mo2-Fe10/MgO catalyst has been studied by Raman spectroscopy. The results showed that when the temperature is lower than 750 °C, there were few SWCNTs formed, and when the temperature is higher than 950 °C, mass amorphous carbons were formed in the SWCNTs bundles due to the self-decomposition of CH4. The temperature window of SWCNTs efficient growth is between 800 and 950 °C, and the optimum growth temperature is about 900 °C. These results were supported by transmission electron microscope images of samples formed under different temperatures. The temperature window is important for large-scale production of SWCNTs by catalytic chemical vapor deposition method.

  13. Water recovery by catalytic treatment of urine vapor

    Science.gov (United States)

    Budininkas, P.; Quattrone, P. D.; Leban, M. I.

    1980-01-01

    The objective of this investigation was to demonstrate the feasibility of water recovery on a man-rated scale by the catalytic processing of untreated urine vapor. For this purpose, two catalytic systems, one capable of processing an air stream containing low urine vapor concentrations and another to process streams with high urine vapor concentrations, were designed, constructed, and tested to establish the quality of the recovered water.

  14. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  15. Examination of surface phenomena of V₂O₅ loaded on new nanostructured TiO₂ prepared by chemical vapor condensation for enhanced NH₃-based selective catalytic reduction (SCR) at low temperatures.

    Science.gov (United States)

    Cha, Woojoon; Yun, Seong-Taek; Jurng, Jongsoo

    2014-09-01

    In this article, we describe the investigation and surface characterization of a chemical vapor condensation (CVC)-TiO2 support material used in a V2O5/TiO2 catalyst for enhanced selective catalytic reduction (SCR) activity and confirm the mechanism of surface reactions. On the basis of previous studies and comparison with a commercial TiO2 catalyst, we examine four fundamental questions: first, the reason for increased surface V(4+) ion concentrations; second, the origin of the increase in surface acid sites; third, a basis for synergistic influences on improvements in SCR activity; and fourth, a reason for improved catalytic activity at low reaction temperatures. In this study, we have cited the result of SCR with NH3 activity for removing NOx and analyzed data using the reported result and data from previous studies on V2O5/CVC-TiO2 for the SCR catalyst. In order to determine the properties of suitable CVC-TiO2 surfaces for efficient SCR catalysis at low temperatures, CVC-TiO2 specimens were prepared and characterized using techniques such as XRD, BET, HR-TEM, XPS, FT-IR, NH3-TPD, photoluminescence (PL) spectroscopy, H2-TPR, and cyclic voltammetry. The results obtained for the CVC-TiO2 materials were also compared with those of commercial TiO2.

  16. Effect of the manufacturing parameters on the structure of nitrogen-doped carbon nanotubes produced by catalytic laser-induced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Morjan, Iuliana P., E-mail: iulianasoare@yahoo.com; Alexandrescu, Rodica; Morjan, Ion; Luculescu, Catalin [Plasma and Radiation Physics, National Institute for Lasers (Romania); Vasile, Eugeniu [METAV-R and D (Romania); Osiceanu, Petre [“Ilie Murgulescu” Institute of Physical Chemistry, Romanian Academy (Romania); Scarisoreanu, Monica [Plasma and Radiation Physics, National Institute for Lasers (Romania); Demian, Gabriela [University of Craiova, Faculty of Mechanics (Romania)

    2013-11-15

    Nitrogen-containing carbon nanotubes (CNx-NTs), with a relatively high level of nitrogen doping were prepared by the catalytic laser-induced CVD method. The nanotubes were catalytically grown directly on a silicon substrate from C{sub 2}H{sub 2}/NH{sub 3} gaseous precursors. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) give firm evidence for the nitrogen doping. As determined by XPS, the N concentration for the prepared CNx-NTs increases from 3.6 to 30.6 at.% with increasing ammonia concentration and pressure. TEM images indicate that the nanotubes are bamboo like. As the nitrogen content increases, there is a transition from the bamboo shape with few defects and little distortion to a corrugated structure with a much larger number of defects. Raman spectroscopy revealed that with increasing nitrogen concentration, there is more disorder and defects, together with an increase in I{sub D}/I{sub G} ratio. By energy-filtering TEM, a higher N concentration was found on the outer amorphous nanolayer than in the compartment core of the nanotubes.

  17. HANFORD CHEMICAL VAPORS WORKER CONCERNS & EXPOSURE EVALUATION

    Energy Technology Data Exchange (ETDEWEB)

    ANDERSON, T.J.

    2006-12-20

    Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank headspaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns. risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits-(OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors.

  18. Catalytic Flash Pyrolysis of Biomass Using Different Types of Zeolite and Online Vapor Fractionation

    KAUST Repository

    Imran, Ali

    2016-03-11

    Bio-oil produced from conventional flash pyrolysis has poor quality and requires expensive upgrading before it can be used as a transportation fuel. In this work, a high quality bio-oil has been produced using a novel approach where flash pyrolysis, catalysis and fractionation of pyrolysis vapors using two stage condensation are combined in a single process unit. A bench scale unit of 1 kg/h feedstock capacity is used for catalytic pyrolysis in an entrained down-flow reactor system equipped with two-staged condensation of the pyrolysis vapor. Zeolite-based catalysts are investigated to study the effect of varying acidities of faujasite Y zeolites, zeolite structures (ZSM5), different catalyst to biomass ratios and different catalytic pyrolysis temperatures. Low catalyst/biomass ratios did not show any significant improvements in the bio-oil quality, while high catalyst/biomass ratios showed an effective deoxygenation of the bio-oil. The application of zeolites decreased the organic liquid yield due to the increased production of non-condensables, primarily hydrocarbons. The catalytically produced bio-oil was less viscous and zeolites were effective at cracking heavy molecular weight compounds in the bio-oil. Acidic zeolites, H-Y and H-ZSM5, increased the desirable chemical compounds in the bio-oil such as phenols, furans and hydrocarbon, and reduced the undesired compounds such as acids. On the other hand reducing the acidity of zeolites reduced some of the undesired compounds in the bio-oil such as ketones and aldehydes. The performance of H-Y was superior to that of the rest of zeolites studied: bio-oil of high chemical and calorific value was produced with a high organic liquid yield and low oxygen content. H-ZSM5 was a close competitor to H-Y in performance but with a lower yield of bio-oil. Online fractionation of catalytic pyrolysis vapors was employed by controlling the condenser temperature and proved to be a successful process parameter to tailor the

  19. Vacuum distillation: vapor filtered-catalytic oxidation water reclamation system utilizing radioisotopes

    Science.gov (United States)

    Honegger, R. J.; Remus, G. A.; Kurg, E. K.

    1971-01-01

    The development of a functional model water reclamation system is discussed. The system produces potable water by distillation from the urine and respiration-perspiration condensate at the normal rate generated by four men. Basic processes employed are vacuum distillation, vapor filtration, vapor phase catalytic oxidation, and condensation. The system is designed to use four 75-watt isotope heaters for distillation thermal input, and one 45-watt isotope for the catalytic oxidation unit. The system is capable of collecting and storing urine, and provides for stabilizing the urine by chemical pretreatment. The functional model system is designed for operation in a weightless condition with liquid-vapor phase separators for the evaporator still, and centrifugal separators for urine collection and vapor condensation. The system provides for storing and dispensing reclaimed potable water. The system operates in a batch mode for 40 days, with urine residues accumulating in the evaporator. The evaporator still and residue are removed to storage and replaced with a fresh still for the next 40-day period.

  20. Low-pressure, chemical vapor deposition polysilicon

    Science.gov (United States)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  1. DuPont Chemical Vapor Technical Report

    International Nuclear Information System (INIS)

    DuPont Safety Resources was tasked with reviewing the current chemical vapor control practices and providing preventive recommendations on best commercial techniques to control worker exposures. The increased focus of the tank closure project to meet the 2024 Tri-Party Agreement (TPA) milestones has surfaced concerns among some CH2MHill employees and other interested parties. CH2MHill is committed to providing a safe working environment for employees and desires to safely manage the tank farm operations using appropriate control measures. To address worker concerns, CH2MHill has chartered a ''Chemical Vapors Project'' to integrate the activities of multiple CH2MHill project teams, and solicit the expertise of external resources, including an independent Industrial Hygiene expert panel, a communications consultant, and DuPont Safety Resources. Over a three-month time period, DuPont worked with CH2MHill ESH and Q, Industrial Hygiene, Engineering, and the independent expert panel to perform the assessment. The process included overview presentations, formal interviews, informal discussions, documentation review, and literature review. DuPont Safety Resources concluded that it is highly unlikely that workers in the tank farms are exposed to chemicals above established standards. Additionally, the conventional and radiological chemistry is understood, the inherent chemical hazards are known, and the risk associated with chemical vapor exposure is properly managed. The assessment highlighted management's commitment to addressing chemical vapor hazards and controlling the associated risks. Additionally, we found the Industrial Hygiene staff to be technically competent and well motivated. The tank characterization data resides in a comprehensive database containing the tank chemical compositions and relevant airborne concentrations

  2. Chemical Vapor Synthesis of Nanocrystalline Oxides

    Science.gov (United States)

    Djenadic, Ruzica; Winterer, Markus

    The generation of nanoparticles in the gas phase by Chemical Vapor Synthesis (CVS) may be described from the point of view of chemical engineering as a sequence of unit operations among which reactant delivery, reaction energy input, and product separation are key processes which determine the product characteristics and quality required by the applications of nanoparticles and powders. In case of CVS, the volatility of the reactants (precursors) may severely limit the possible type of products as well as the production rate. It is shown that these limits can be lifted by use of a laser flash evaporator which also enables the use of precursor mixtures for the production of complex oxides as shown for Co-doped ZnO and the pulsed operation to influence powder characteristics. The mode in which energy is supplied to the particle synthesis reactor has also substantial influence on particle and powder characteristics as is shown for TiO2 using different time-temperatureprofiles.

  3. Chemical Vapor Deposition Of Silicon Carbide

    Science.gov (United States)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  4. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  5. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  6. VAPOR-PHASE CATALYTIC CONVERSION OF ETHANOL INTO 1,3-BUTADIENE ON Cr-Ba/MCM-41 CATALYSTS

    OpenAIRE

    N. La-Salvia; J. J. Lovón-Quintana; G.P. VALENÇA

    2015-01-01

    AbstractAl-MCM-41, 16%Ba/Al-MCM-41 and 1.4%Cr-16%Ba/Al-MCM-41 were used as catalysts in the vapor-phase catalytic conversion of ethanol. Physical-chemical properties of the catalysts and the effect of barium and chromium on the Al-MCM-41 activity and 1,3-butadiene yield were studied. The catalysts were characterized by X-ray diffraction (XRD), N2 physisorption (BET method), CO2chemisorption and Fourier transform infrared spectroscopy (FT-IR). When ethanol was completely converted on Al-MCM-41...

  7. Worker Protection from Chemical Vapors: Hanford Tank Farms

    International Nuclear Information System (INIS)

    Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank head-spaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns, risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits (OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors. (authors)

  8. In-situ catalytic upgrading of biomass pyrolysis vapor: Co-feeding with methanol in a multi-zone fixed bed reactor

    International Nuclear Information System (INIS)

    Highlights: • Aromatics yield improved with increasing H/Ceff ratio of the feed. • HZSM-5 catalyst was an effective catalyst for in-situ bio-oil upgrading. • Biomass/methanol co-feeding attenuated the coke formation. • Methanol co-feeding enhanced the bio-oil quality. - Abstract: The in-situ catalytic upgrading of the biomass pyrolysis vapor and its mixture with methanol were conducted in a fixed bed multi-zone reactor. The steps were comprised; thermally converting the biomass in the pyrolysis reactor, passing its vapor in contact with the HZSM-5 zeolite catalyst in the presence of methanol vapor, and transformation of the resulting upgraded pyrolysis vapor into the liquid product. The biomass pyrolysis and catalytic pyrolysis vapor upgrading were performed at 500 °C. The highly valuable chemicals production was a function of the hydrogen to carbon effective ratio (H/Ceff) of the feed. This ratio was regulated by changing the relative amount of biomass and methanol. More aromatic hydrocarbons (50.02 wt.%) and less coke deposition on the catalyst (1.3 wt.%) were yielded from the biomass, when methanol was co-fed to the catalytic pyrolysis process (H/Ceff = 1.35). In this contribution, the deposited coke on the catalyst was profoundly investigated. The coke, with high contents of oxo-aromatics and aromatic compounds, was generated by polymerization of biomass lignin derived components activated by catalyst acid sites

  9. Chemical vapor deposition of graphene single crystals.

    Science.gov (United States)

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  10. Studying chemical vapor deposition processes with theoretical chemistry

    OpenAIRE

    Pedersen, Henrik; Elliott, Simon D.

    2014-01-01

    In a chemical vapor deposition (CVD) process, a thin film of some material is deposited onto a surface via the chemical reactions of gaseous molecules that contain the atoms needed for the film material. These chemical reactions take place on the surface and in many cases also in the gas phase. To fully understand the chemistry in the process and thereby also have the best starting point for optimizing the process, theoretical chemical modeling is an invaluable tool for providing atomic-scale...

  11. Stepwise Chlorination-Chemical Vapor Transport Reactions for Bastnaesite Concentrate

    Institute of Scientific and Technical Information of China (English)

    张丽清; 王军; 范世华; 雷鹏翔; 王之昌

    2002-01-01

    Vapor phase extraction and mutual separation of rare earth (RE) elements from bastnaesite concentrate were investigated using stepwise chlorination-chemical vapor transport reactions mediated by vapor complexes LnAlnCl3n+3 (Ln=RE elements). The bastnaesite was heated to 800 K and chlorinated between 800~1300 K with C+Cl2+SiCl4 to remove CO2, SiF4 and high volatile chlorides. At the temperature of 1300 K for 6 h, the resulted RE chlorides were chemically transported and mutual separated with the vapor complexes while CaCl2 and BaCl2 were remained in the residues. Significantly different CVT characteristics were observed for gradually decreased and wave form temperature gradients

  12. Chemically-Modified Cellulose Paper as a Microstructured Catalytic Reactor

    Directory of Open Access Journals (Sweden)

    Hirotaka Koga

    2015-01-01

    Full Text Available We discuss the successful use of chemically-modified cellulose paper as a microstructured catalytic reactor for the production of useful chemicals. The chemical modification of cellulose paper was achieved using a silane-coupling technique. Amine-modified paper was directly used as a base catalyst for the Knoevenagel condensation reaction. Methacrylate-modified paper was used for the immobilization of lipase and then in nonaqueous transesterification processes. These catalytic paper materials offer high reaction efficiencies and have excellent practical properties. We suggest that the paper-specific interconnected microstructure with pulp fiber networks provides fast mixing of the reactants and efficient transport of the reactants to the catalytically-active sites. This concept is expected to be a promising route to green and sustainable chemistry.

  13. Guiding catalytically active particles with chemically patterned surfaces

    CERN Document Server

    Uspal, W E; Dietrich, S; Tasinkevych, M

    2016-01-01

    Catalytically active Janus particles suspended in solution create gradients in the chemical composition of the solution along their surfaces, as well as along any nearby container walls. The former leads to self-phoresis, while the latter gives rise to chemi-osmosis, providing an additional contribution to self-motility. Chemi-osmosis strongly depends on the molecular interactions between the diffusing chemical species and the wall. We show analytically, using an approximate "point-particle" approach, that by chemically patterning a planar substrate one can direct the motion of Janus particles: the induced chemi-osmotic flows can cause particles to either "dock" at the chemical step between the two materials, or to follow a chemical stripe. These theoretical predictions are confirmed by full numerical calculations. Generically, docking occurs for particles which tend to move away from their catalytic caps, while stripe-following occurs in the opposite case. Our analysis reveals the physical mechanisms governi...

  14. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    Science.gov (United States)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  15. An Investigation on the Formation of Carbon Nanotubes by Two-Stage Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. S. Shamsudin

    2012-01-01

    Full Text Available High density of carbon nanotubes (CNTs has been synthesized from agricultural hydrocarbon: camphor oil using a one-hour synthesis time and a titanium dioxide sol gel catalyst. The pyrolysis temperature is studied in the range of 700–900°C at increments of 50°C. The synthesis process is done using a custom-made two-stage catalytic chemical vapor deposition apparatus. The CNT characteristics are investigated by field emission scanning electron microscopy and micro-Raman spectroscopy. The experimental results showed that structural properties of CNT are highly dependent on pyrolysis temperature changes.

  16. Synthesis of high purity multi-walled carbon nanotubes over Co-Mo/MgO catalyst by the catalytic chemical vapor deposition of methane%CO-Mo/MgO催化剂上甲烷化学气相沉积制备高纯度多壁碳纳米管

    Institute of Scientific and Technical Information of China (English)

    Wei-Ming Yeoh; Kim-Yang Lee; Siang-Piao Chai; Keat-Teong Lee; Abdul Rahman Mohamed

    2009-01-01

    Nearly uniform diameter multi-walled carbon nanotubes (MWCNTs) were synthesized over a magnesia sup-ported Co-Mo bimetallic catalyst through the catalytic chemical vapor deposition of methane. The bimetallic catalyst with a composition of Co: Mo: MgO =5: 20:75 ( mass ratio) was prepared by a sol-gel method. Thermagravimetric analysis shows that MWCNTs were synthesized in high yield. The selectivity of the catalyst for MWCNTs over undesired amor-phous carbon was 91.17%. Transmission electron microscopy indicates that the MWCNTs grown on the catalyst have an average diameter of 6.2±0.5 nm(mean±standard deviation). Through simple purification by mild acid treatment, the catalyst residue for the purified samples was reduced to 0.72%.%以甲烷为碳源,co-Mo/MgO为催化剂,通过气相化学沉积制备了直径均匀的多壁碳纳米管(MWC-NTs).采用溶胶-凝胶法所制双金属催化剂的组成为Co∶Mo∶MgO=5∶20∶75(质量比).热重分析表明多壁碳纳米管产率高达313.67%.催化剂对于多壁碳纳米管生长的选择性是91.17%(其余为无定形碳).透射电子显微镜分析显示:催化剂七生长的MWCNTs平均直径为6.2±0.5nm(平均±标准偏差).通过稀酸的简单纯化处理,纯化样品的催化剂残存率降至0.72%.

  17. Theoretical and experimental evidence of a metal-carbon synergism for the catalytic growth of carbon nanotubes by chemical vapor deposition%化学气相沉积反应中金属-碳协同催化碳纳米管生长的理论和实验证据

    Institute of Scientific and Technical Information of China (English)

    杜桂香; 康志荣; 宋金玲; 赵江红; 宋昌; 朱珍平

    2008-01-01

    从理论和实验角度研究了金属-碳协同催化的化学气相沉积反应中碳纳米管的成核和生长过程.结果表明:多壁碳纳米管的成核和生长不仅受金属的催化作用,碳核一旦形成也会促进碳纳米管向轴向和径向的生长.金属催化剂颗粒仅仅在促进最内层碳核的形成及生长,碳原子向有序的石墨结构转化有催化作用.多壁碳纳米管和单壁碳纳米管形成的本质区别在于是否存在碳的自催化作用.%The nucleation and growth of carbon nanotubes (CNTs) using chemical vapor deposition with a metal-carbon catalyst have been studied experimentally and theoretically.Results suggest that the nucleation and growth of multiwalled CNTs are not due to the metal alone,but that carbon nuclei (once formed) also contribute to radial and axial growth.Metal particles mainly promote the nucleation and growth of the innermost carbon shell(s),and catalyze the ordering of the carbon atoms to form graphene structures.The intrinsic difference between multiwalled CNT formation and single-walled CNT formation seems to be associated with a self-catalytic function of carbon nuclei.

  18. Synthesis of chiral polyaniline films via chemical vapor phase polymerization

    DEFF Research Database (Denmark)

    Chen, J.; Winther-Jensen, B.; Pornputtkul, Y.;

    2006-01-01

    Electrically and optically active polyaniline films doped with (1)-(-)-10- camphorsulfonic acid were successfully deposited on nonconductive substrates via chemical vapor phase polymerization. The above polyaniline/ R- camphorsulfonate films were characterized by electrochemical and physical...... and Raman spectrum, but also exhibited optical activity corresponding to the polymer chains as observed by circular dichroism spectra. (c) 2005 The Electrochemical Society....

  19. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  20. A novel induction heater for chemical vapor deposition

    Science.gov (United States)

    Ong, C. W.; Wong, H. K.; Sin, K. S.; Yip, S. T.; Chik, K. P.

    1989-06-01

    We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.

  1. Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

    Science.gov (United States)

    Liao, Chun-Da; Lu, Yi-Ying; Tamalampudi, Srinivasa Reddy; Cheng, Hung-Chieh; Chen, Yit-Tsong

    2013-10-01

    We present a chemical vapor deposition (CVD) method to catalytically synthesize large-area, transferless, single- to few-layer graphene sheets using hexamethyldisilazane (HMDS) on a SiO2/Si substrate as a carbon source and thermally evaporated alternating Ni/Cu/Ni layers as a catalyst. The as-synthesized graphene films were characterized by Raman spectroscopic imaging to identify single- to few-layer sheets. This HMDS-derived graphene layer is continuous over the entire growth substrate, and single- to trilayer mixed sheets can be up to 30 -m in the lateral dimension. With the synthetic CVD method proposed here, graphene can be grown into tailored shapes directly on a SiO2/Si surface through vapor priming of HMDS onto predefined photolithographic patterns. The transparent and conductive HMDS-derived graphene exhibits its potential for widespread electronic and opto-electronic applications.

  2. Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene

    Science.gov (United States)

    Terasawa, Tomo-o.; Saiki, Koichiro

    2015-03-01

    To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O2 partial pressure (PO2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with PO2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that PO2 is an important parameter to optimize in the CVD growth of graphene.

  3. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  4. Thermal stability of multilayer graphene films synthesized by chemical vapor deposition and stained by metallic impurities

    International Nuclear Information System (INIS)

    Thermal stability is an important property of graphene that requires thorough investigation. This study reports the thermal stability of graphene films synthesized by chemical vapor deposition (CVD) on catalytic nickel substrates in a reducing atmosphere. Electron microscopies, atomic force microscopy, and Raman spectroscopy, as well as electronic measurements, were used to determine that CVD-grown graphene films are stable up to 700 °C. At 800 °C, however, graphene films were etched by catalytic metal nanoparticles, and at 1000 °C many tortuous tubular structures were formed in the film and carbon nanotubes were formed at the film edges and at catalytic metal-contaminated sites. Furthermore, we applied our pristine and thermally treated graphene films as active channels in field-effect transistors and characterized their electrical properties. Our research shows that remnant catalytic metal impurities play a critical role in damaging graphene films at high temperatures in a reducing atmosphere: this damage should be considered in the quality control of large-area graphene films for high temperature applications. (paper)

  5. Recent Advances in Catalytic Conversion of Ethanol to Chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Junming; Wang, Yong

    2014-04-30

    With increased availability and decreased cost, ethanol is potentially a promising platform molecule for the production of a variety of value-added chemicals. In this review, we provide a detailed summary of recent advances in catalytic conversion of ethanol to a wide range of chemicals and fuels. We particularly focus on catalyst advances and fundamental understanding of reaction mechanisms involved in ethanol steam reforming (ESR) to produce hydrogen, ethanol conversion to hydrocarbons ranging from light olefins to longer chain alkenes/alkanes and aromatics, and ethanol conversion to other oxygenates including 1-butanol, acetaldehyde, acetone, diethyl ether, and ethyl acetate.

  6. Combustion chemical vapor desposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States)

    1995-10-01

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings.

  7. Carbon nanostructures and networks produced by chemical vapor deposition

    OpenAIRE

    Kowlgi, N.K.K.; Koper, G.J.M.; Raalten, R.A.D.

    2012-01-01

    The invention pertains to a method for manufacturing crystalline carbon nanostructures and/or a network of crystalline carbon nanostructures, comprising: (i) providing a bicontinuous micro-emulsion containing metal nanoparticles having an average particle size between 1and 100nm; (ii) bringing said bicontinuous micro-emulsion into contact with a substrate; and (iii) subjecting said metal nanoparticles and a gaseous carbon source to chemical vapor deposition, thus forming carbon nanostructures...

  8. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik;

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...... of CVD processes; however very little information on the process and its characteristics can be found. This work presents the state of the art on the CVD of tantalum in long narrow channels and a reaction mechanism is suggested based on a rudimentary model. The effects of the system pressure, temperature...... and process-setup on the deposition rates and material distribution are also presented....

  9. An Evaluation of the Vapor Phase Catalytic Ammonia Removal Process for Use in a Mars Transit Vehicle

    Science.gov (United States)

    Flynn, Michael; Borchers, Bruce

    1998-01-01

    An experimental program has been developed to evaluate the potential of the Vapor Phase Catalytic Ammonia Reduction (VPCAR) technology for use as a Mars Transit Vehicle water purification system. Design modifications which will be required to ensure proper operation of the VPCAR system in reduced gravity are also evaluated. The VPCAR system is an integrated wastewater treatment technology that combines a distillation process with high temperature catalytic oxidation. The distillation portion of the system utilizes a vapor compression distillation process to provide an energy efficient phase change separation. This portion of the system removes any inorganic salts and large molecular weight, organic contaminates, i.e., non-volatile, from the product water stream and concentrates these contaminates into a byproduct stream. To oxidize the volatile organic compounds and ammonia, a vapor phase, high temperature catalytic oxidizer is used. This catalytic system converts these compounds along with the aqueous product into CO2, H2O, and N2O. A secondary catalytic bed can then be used to reduce the N2O to nitrogen and oxygen (although not evaluated in this study). This paper describes the design specification of the VPCAR process, the relative benefits of its utilization in a Mars Transit Vehicle, and the design modification which will be required to ensure its proper operation in reduced gravity. In addition, the results of an experimental evaluation of the processors is presented. This evaluation presents the processors performance based upon product water purity, water recovery rates, and power.

  10. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    Science.gov (United States)

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed. PMID:20544886

  11. Altering bio-oil composition by catalytic treatment of pinewood pyrolysis vapors over zeolites using an auger - packed bed integrated reactor system

    Directory of Open Access Journals (Sweden)

    Vamshi Krishna Guda

    2016-09-01

    Full Text Available Pine wood pyrolysis vapors were catalytically treated using Zeolite catalysts. An auger fed reactor was used for the pinewood pyrolysis while a packed bed reactor mounted on the top of the auger reactor housed the catalyst for the treatment of pinewood pyrolytic vapors. The pyrolytic vapors produced at 450 oC were passed through zeolite catalysts maintained at 425 oC at a weight hourly space velocity (WHSV of 12 h-1. Five zeolites, including ZSM-5, mordenite, ferrierite, Zeolite-Y, and Zeolite-beta (all in H form, were used to study the effect of catalyst properties such as acidity, pore size, and pore structure on catalytic cracking of pinewood pyrolysis vapors. Product bio-oils were analyzed for their chemical composition using GC-MS, water content, density, viscosity, acid value, pH, and elemental compositions. Thermogravimetric analysis (TGA was performed to analyze the extent of coking on zeolite catalysts. Application of catalysis to biomass pyrolysis increased gas product yields at the expense of bio-oil yields. While all the zeolites deoxygenated the pyrolysis vapors, ZSM-5 was found to be most effective. The ZSM-5 catalyzed bio-oil, rich in phenolics and aromatic hydrocarbons, was less viscous, had relatively lower acid number and high pH, and possessed oxygen content nearly half that of un-catalyzed bio-oil. Brønsted acidity, pore size, and shape-selective catalysis of ZSM-5 catalyst proved to be the determining factors for its activity. TGA results implied that the pore size of catalysts highly influenced coking reactions. Regeneration of the used catalysts was successfully completed at 700 oC.

  12. Fundamental studies of chemical vapor deposition diamond growth processes

    International Nuclear Information System (INIS)

    We are developing laser spectroscopic techniques to foster a fundamental understanding of diamond film growth by hot filament chemical vapor deposition (CVD). Several spectroscopic techniques are under investigation to identify intermediate species present in the bulk reactor volume, the thin active volume immediately above the growing film, and the actual growing surface. Such a comprehensive examination of the overall deposition process is necessary because a combination of gas phase and surface chemistry is probably operating. Resonantly enhanced multiphoton ionization (REMPI) techniques have been emphasized. A growth rector that permits through-the-substrate gas sampling for REMPI/time-of-flight mass spectroscopy has been developed. 7 refs., 2 figs

  13. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  14. Microwave transmission properties of chemical vapor deposition graphene

    Science.gov (United States)

    Wu, Yunqiu; Xu, Yuehang; Wang, Zegao; Xu, Cao; Tang, Zongxi; Chen, Yuanfu; Xu, Ruimin

    2012-07-01

    In this letter, the microwave transmission properties of graphene grown by the chemical vapor deposition are studied by using a multiple-layer coplanar-waveguide transmission-line based measurement method. Remarkable energy loss and phase shift have been observed in graphene from the measured scattering parameters through vector network analyzer. The effective permittivity is deduced by partial-capacitance technique, and the complex permittivity of graphene are extracted in the frequency range of 500 MHz to 6 GHz. Different from conventional dielectric material, the permittivity of graphene shows frequency-dependent below 4 GHz and has an magnitude larger than 104 for both real and imaginary parts.

  15. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  16. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; McLaughlin, J.C. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.; Probst, K.J.; Anderson, T.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering; Starr, T.L. [Georgia Inst. of Tech., Atlanta, GA (United States). Dept. of Materials Science and Engineering

    1997-12-01

    Silicon carbide-based heat exchanger tubes are of interest to energy production and conversion systems due to their excellent high temperature properties. Fiber-reinforced SiC is of particular importance for these applications since it is substantially tougher than monolithic SiC, and therefore more damage and thermal shock tolerant. This paper reviews a program to develop a scaled-up system for the chemical vapor infiltration of tubular shapes of fiber-reinforced SiC. The efforts include producing a unique furnace design, extensive process and system modeling, and experimental efforts to demonstrate tube fabrication.

  17. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Matlin, W.M. [Univ. of Tennessee, Knoxville, TN (United States); Stinton, D.P.; Besmann, T.M. [Oak Ridge National Lab., TN (United States)

    1995-08-01

    A two-step forced chemical vapor infiltration process was developed that reduced infiltration times for 4.45 cm dia. by 1.27 cm thick Nicalon{sup +} fiber preforms by two thirds while maintaining final densities near 90 %. In the first stage of the process, micro-voids within fiber bundles in the cloth were uniformly infiltrated throughout the preform. In the second stage, the deposition rate was increased to more rapidly fill the macro-voids between bundles within the cloth and between layers of cloth. By varying the thermal gradient across the preform uniform infiltration rates were maintained and high final densities achieved.

  18. Catalytic Deoxydehydration of Carbohydrates and Polyols to Chemicals and Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Nicholas, Kenneth M. [Univ. of Oklahoma, Norman, OK (United States)

    2016-01-15

    As the world's fossil fuel resources are being depleted and their costs increase, there is an urgent need to discover and develop new processes for the conversion of renewable, biomass resources into fuels and chemical feedstocks. Research and development in this area have been given high priority by both governmental agencies and industry. To increase the energy content and decrease the boiling points of biomass-derived carbohydrates and polyols to the useful liquid range it is necessary to chemically remove water (dehydrate) and, preferably, oxygen (deoxygenate/reduce). The poly-hydroxylic nature of carbohydrates is attractive for their use as functionalized chemical building blocks, but it presents a daunting challenge for their selective conversion to single product chemicals or fuels. The long term, practical objective of this project is to develop catalytic processes for the deoxydehydration (DODH) of biomass-derived carbohydrates and polyols to produce unsaturated alcohols and hydrocarbons of value as chemical feedstocks and fuels; DODH: polyol + reductant --(LMOx catalyst)--> unsaturate + oxidized reductant + H2O. Limited prior studies have established the viability of the DODH process with expensive phosphine reductants and rhenium-catalysts. Initial studies in the PI's laboratory have now demonstrated: 1) the moderately efficient conversion of glycols to olefins by the economical sulfite salts is catalyzed by MeReO3 and Z+ReO4-; 2) effective phosphine-based catalytic DODH of representative glycols to olefins by cheap LMoO2 complexes; and 3) computational studies (with K. Houk, UCLA) have identified several Mo-, W-, and V-oxo complexes that are likely to catalyze glycol DODH. Seeking practically useful DODH reactions of complex polyols and new understanding of the reactivity of polyoxo-metal species with biomass-oxygenates we will employ a two-pronged approach: 1) investigate experimentally the reactivity, both stoichiometric and catalytic, of

  19. Spectroscopic Observation of Chemical Interaction Between Impact-induced Vapor Clouds and the Ambient Atmosphere

    Science.gov (United States)

    Sugita, S.; Heineck, J. T.; Schultz, P. H.

    2000-01-01

    Chemical reactions within impact-induced vapor clouds were observed in laboratory experiments using a spectroscopic method. The results indicate that projectile-derived carbon-rich vapor reacts intensively with atmospheric nitrogen.

  20. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shukrullah, S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Mohamed, N. M., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Shaharun, M. S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia); Yasar, M., E-mail: Muhammad.yasar@ieee.org [Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia)

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  1. Synthesis and Characterization of Carbon nanofibers on Co and Cu Catalysts by Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Park, Eunsil; Kim, Jongwon; Lee, Changseop [Keimyung Univ., Daegu (Korea, Republic of)

    2014-06-15

    This study reports on the synthesis of carbon nanofibers via chemical vapor deposition using Co and Cu as catalysts. In order to investigate the suitability of their catalytic activity for the growth of nanofibers, we prepared catalysts for the synthesis of carbon nanofibers with Cobalt nitrate and Copper nitrate, and found the optimum concentration of each respective catalyst. Then we made them react with Aluminum nitrate and Ammonium Molybdate to form precipitates. The precipitates were dried at a temperature of 110 .deg. C in order to be prepared into catalyst powder. The catalyst was sparsely and thinly spread on a quartz tube boat to grow carbon nanofibers via thermal chemical vapor deposition. The characteristics of the synthesized carbon nanofibers were analyzed through SEM, EDS, XRD, Raman, XPS, and TG/DTA, and the specific surface area was measured via BET. Consequently, the characteristics of the synthesized carbon nanofibers were greatly influenced by the concentration ratio of metal catalysts. In particular, uniform carbon nanofibers of 27 nm in diameter grew when the concentration ratio of Co and Cu was 6:4 at 700 .deg. C of calcination temperature; carbon nanofibers synthesized under such conditions showed the best crystallizability, compared to carbon nanofibers synthesized with metal catalysts under different concentration ratios, and revealed 1.26 high amorphicity as well as 292 m{sup 2}g{sup -1} high specific surface area.

  2. VAPOR-PHASE CATALYTIC CONVERSION OF ETHANOL INTO 1,3-BUTADIENE ON Cr-Ba/MCM-41 CATALYSTS

    Directory of Open Access Journals (Sweden)

    N. La-Salvia

    2015-06-01

    Full Text Available AbstractAl-MCM-41, 16%Ba/Al-MCM-41 and 1.4%Cr-16%Ba/Al-MCM-41 were used as catalysts in the vapor-phase catalytic conversion of ethanol. Physical-chemical properties of the catalysts and the effect of barium and chromium on the Al-MCM-41 activity and 1,3-butadiene yield were studied. The catalysts were characterized by X-ray diffraction (XRD, N2 physisorption (BET method, CO2chemisorption and Fourier transform infrared spectroscopy (FT-IR. When ethanol was completely converted on Al-MCM-41 and 16%Ba/Al-MCM-41, the reaction products showed a high selectivity for ethylene (90-98%. However, on the 1.4%Cr-16%Ba/Al-MCM-41 catalyst, a greater number of reaction products were obtained such as ethylene, acetaldehyde, diethyl ether and 1,3-butadiene. The maximum 1,3-butadiene yield obtained from ethanol reaction was 25% at 723 K and W/FEtOH = 15 g h mol-1. The latter result was obtained in a single step and without addition of reaction promoters (e.g., acetaldehyde, crotonaldehyde, hydrogen in the feed stream to the reactor.

  3. 不同碳源催化化学气相沉积制备自支撑C/Ni-Fiber复合电极材料的电容脱盐性能%Self-supporting Macroscopic Carbon/Ni-Fiber Hybrid Electrodes Prepared by Catalytic Chemical Vapor Deposition Using Various Carbonaceous Compounds and Their Capacitive Deionization Performance

    Institute of Scientific and Technical Information of China (English)

    王喜文; 姜芳婷; 索全伶; 方玉珠; 路勇

    2011-01-01

    以甲烷、乙烯、乙醇和正丁醇为碳源,通过催化化学气相沉积在具有三维开放网络结构的烧结8 μm-Ni金属纤维上沉积碳的方法,制备了以金属Ni纤维网络为集流极、沉积碳为离子存储库的薄层大面积自支撑C/Ni-fiber复合电极材料.用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、热重分析(TGA)、X射线衍射(XRD)、N2-吸脱附等温线和循环伏安与电化学阻抗谱对电极材料进行了表征,并考察了其作为电极的电容脱盐性能.乙烯、甲烷、正丁醇和乙醇为碳源的沉积碳形态分别为鱼骨状碳纳米管(CNTs)、石墨烯面取向与轴平行的CNTs、棒状和蠕虫状碳纳米纤维(CNFs).C/Ni-fiber复合电极材料对NaCl的电吸附容量顺序为:乙烯>正丁醇>甲烷>乙醇,这与复合电极的电化学特性、孔结构和碳的纳米结构相关.在1.2V的工作电压下,以乙烯为碳源制备的C/Ni-fiber复合电极材料对水溶液中NaCl (100 mg·L-1)的电吸附容量达159 μmol·g-1.%We prepared a series of self-supported macroscopic C/Ni-fiber hybrid electrodes by catalytic chemical vapor deposition (CCVD) using methane, ethylene, ethanol and n-butanol as carbon sources to embed carbon onto a three-dimensional network of sinter-locked conductive 8 um-nickel fibers. For the as-prepared hybrid electrodes, the Ni-microfibrous network serves as a current collector and the carbons as ion storage media while the macroporous void space serves as an electrolyte reservoir. We characterized the hybrid electrodes using scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), N2 isothermal adsorption-desorption, cyclic voltammetry and electrochemical impedance spectroscopy. The desalination performance of the C/Ni-fiber hybrids was evaluated as electrodes in a capacitive deionization system. The carbon morphology is dependent on the carbonaceous compounds

  4. Catalytic Hydrogenation of Bio-Oil for Chemicals and Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, Douglas C.

    2006-02-14

    The scope of work includes optimizing processing conditions and demonstrating catalyst lifetime for catalyst formulations that are readily scaleable to commercial operations. We use a bench-scale, continuous-flow, packed-bed, catalytic, tubular reactor, which can be operated in the range of 100-400 mL/hr., from 50-400 C and up to 20MPa (see Figure 1). With this unit we produce upgraded bio-oil from whole bio-oil or useful bio-oil fractions, specifically pyrolytic lignin. The product oils are fractionated, for example by distillation, for recovery of chemical product streams. Other products from our tests have been used in further testing in petroleum refining technology at UOP and fractionation for product recovery in our own lab. Further scale-up of the technology is envisioned and we will carry out or support process design efforts with industrial partners, such as UOP.

  5. Catalytic aerobic oxidation of bio-renewable chemicals

    DEFF Research Database (Denmark)

    Gorbanev, Yury

    -free conditions. Moreover, a detailed study on the performance and stability of the ruthenium hydroxide catalysts on magnesium-containing supports under reaction conditions was conducted. The aerobic oxidation of HMF to form another value-added chemical, 2,5-diformylfuran (DFF), was also investigated......, EDS, XRF and other methods. Supported gold and ruthenium hydroxide catalyst systems were explored for the aerobic oxidation of 5-hydroxymethylfurfural (HMF) to 2,5-furandicarboxylic acid (FDA), a potential polymer building block for the plastic industry, or its dimethyl ester (FDMC). High product......Ox deposited on various metal oxides. Furthermore, this thesis presents the results of the catalytic aerobic oxidative degradation of higher alcohols over supported ruthenium hydroxide catalysts. A very efficient oxidative cleavage of vic-diols to form respective acids was also shown under examined conditions...

  6. Nanograined WC-Co Composite Powders by Chemical Vapor Synthesis

    Science.gov (United States)

    Ryu, Taegong; Sohn, H. Y.; Han, Gilsoo; Kim, Young-Ugk; Hwang, Kyu Sup; Mena, M.; Fang, Zhigang Z.

    2008-02-01

    Nanograined tungsten carbide (WC) Co composite powders were prepared by a chemical vapor synthesis (CVS) process that has previously been used for preparing the aluminides of titanium and nickel and other metallic and intermetallic powders at the University of Utah. To determine the optimum condition for producing nanograined WC-Co composite powders, the effects of carburization temperature, CH4 to WCl6 ratio, CH4 to H2 ratio, CoCl2 contents, and residence time of WC on the powder composition and particle size were investigated. The reduction and carburization of the vaporized chlorides by CH4-H2 mixtures produced nanograined WC and Co composite powder, which sometimes contained small levels of W2C, W, or the η (Co3W3C) phase. The presence of these incompletely carburized phases can be tolerated because they can be fully carburized during the subsequent sintering process. These phases can also be fully carburized by a separate post-treatment. The products were characterized by using X-ray diffraction (XRD) and a transmission electron microscope (TEM). As a result, nanograined WC-Co composite with the particle size less than 30 nm was obtained.

  7. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    Science.gov (United States)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  8. Characterization of tin dioxide film for chemical vapors sensor

    Energy Technology Data Exchange (ETDEWEB)

    Hafaiedh, I. [Unite de Recherche de Physique des Semi-conducteurs et Capteurs, IPEST, 2070 La Marsa (Tunisia)], E-mail: imen_haf@yahoo.fr; Helali, S.; Cherif, K.; Abdelghani, A. [Unite de Recherche de Physique des Semi-conducteurs et Capteurs, IPEST, 2070 La Marsa (Tunisia); Tournier, G. [Ecole des Mines de Saint-Etienne, 158 cours Fauriel, 42023 Saint-Etienne (France)

    2008-07-01

    Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO{sub 2}) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 deg. C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing.

  9. Strain relaxation in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  10. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Shin Jinhong [Texas Materials Institute, University of Texas at Austin, Austin, TX 78750 (United States); Waheed, Abdul [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Winkenwerder, Wyatt A. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Kim, Hyun-Woo [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Agapiou, Kyriacos [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Jones, Richard A. [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Hwang, Gyeong S. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States)]. E-mail: ekerdt@che.utexas.edu

    2007-05-07

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO{sub 2} containing {approx} 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH{sub 2}(PMe{sub 3}){sub 4} (Me = CH{sub 3}) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

  11. Field emission properties of chemical vapor deposited individual graphene

    Energy Technology Data Exchange (ETDEWEB)

    Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

    2014-03-03

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10 nA current were found to be 515, 610, and 870 V/μm for vacuum gap of 400, 300, and 200 nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  12. Synthesis of Aligned Carbon Nanotubes by Thermal Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Gang; ZHOU Ming; MA Weiwei; CAI Lan

    2009-01-01

    Single crystal silicon was found to be very beneficial to the growth of aligned carbon nanotubes by chemical vapor deposition with C2H2 as carbon source. A thin film of Ni served as catalyst was deposited on the Si substrate by the K575X Peltier Cooled High Resolution Sputter Coater before growth. The growth properties of carbon nanotubes were studied as a function of the Ni catalyst layer thickness. The diameter, growth rate and areal density of the carbon nanotubes were controlled by the initial thickness of the catalyst layer. Steric hindrance between nanotubes forces them to grow in well-aligned manner at an initial stage of growth. Transmission electron microscope analysis revealed that nanotubes grew by a tip growth mechanism.

  13. Coating of metals with titanium diboride by chemical vapor deposition

    International Nuclear Information System (INIS)

    This study is an experimental investigation of the chemical vapor deposition of titanium diboride on metallic substrates by the hydrogen reduction of TiCl4 and BCl3 at temperatures between 8500C and 11000C. Kovar, tantalum, and several stainless steels were found to be suitable substrates since they could withstand the deposition temperature, had adequate resistance to HCl, a by-product of the deposition reaction, and had thermal expansion coefficients sufficiently close to that of TiB2 (less than or equal to10 x 10-6/0C). The TiB2 coatings produced were 68.2% Ti and thus near stoichiometry and had very low impurity content. They had Knoop hardnesses averaging 3300 kg/mm2 and exhibited extraordinary erosion resistance

  14. Selective vapor detection of an integrated chemical sensor array

    Science.gov (United States)

    Jung, Youngmo; Kim, Young Jun; Choi, Jaebin; Lim, Chaehyun; Shin, Beom Ju; Moon, Hi Gyu; Lee, Taikjin; Kim, Jae Hun; Seo, Minah; Kang, Chong Yun; Jun, Seong Chan; Lee, Seok; Kim, Chulki

    2015-07-01

    Graphene is a promising material for vapor sensor applications because of its potential to be functionalized for specific chemical gases. In this work, we present a graphene gas sensor that uses single-stranded DNA (ssDNA) molecules as its sensing agent. We investigate the characteristics of graphene field effect transistors (FETs) coated with different ssDNAs. The sensitivity and recovery rate for a specific gas are modified according to the differences in the DNA molecules' Guanine (G) and Cytosine (C) content. ssDNA-functionalized devices show a higher recovery rate compared to bare graphene devices. Pattern analysis of a 2-by-2 sensor array composed of graphene devices functionalized with different-sequence ssDNA enables identification of NH3, NO2, CO, SO2 using Principle Component Analysis (PCA).

  15. Chemical vapor infiltration of TiB{sub 2} composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M. [Oak Ridge National Laboratory, TN (United States)

    1995-05-01

    This program is designed to develop a Hall-Heroult aluminum smelting cathode with substantially improved properties. The carbon cathodes in current use require significant anode-to-cathode spacing in order to prevent shorting, causing significant electrical inefficiencies. This is due to the non-wettability of carbon by aluminum which causes instability in the cathodic aluminum pad. It is suggested that a fiber reinforced-TiB{sub 2} matrix composite would have the requisite wettability, strength, strain-to-failure, cost, and lifetime to solve this problem. The approach selected to fabricate such a cathode material is chemical vapor infiltration (CVI). This program is designed to evaluate potential fiber reinforcements, fabricate test specimens, and test the materials in a static bath and lab-scale Hall cell.

  16. Characterization of tin dioxide film for chemical vapors sensor

    International Nuclear Information System (INIS)

    Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO2) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 deg. C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing

  17. Mass transport measurements and modeling for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Chiang, D.Y.; Fiadzo, O.G.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Engineering

    1997-12-01

    This project involves experimental and modeling investigation of densification behavior and mass transport in fiber preforms and partially densified composites, and application of these results to chemical vapor infiltration (CVI) process modeling. This supports work on-going at ORNL in process development for fabrication of ceramic matrix composite (CMC) tubes. Tube-shaped composite preforms are fabricated at ORNL with Nextel{trademark} 312 fiber (3M Corporation, St. Paul, MN) by placing and compressing several layers of braided sleeve on a tubular mandrel. In terms of fiber architecture these preforms are significantly different than those made previously with Nicalon{trademark} fiber (Nippon Carbon Corp., Tokyo, Japan) square weave cloth. The authors have made microstructure and permeability measurements on several of these preforms and a few partially densified composites so as to better understand their densification behavior during CVI.

  18. Rapid chemical vapor infiltration of C/C composites

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ming-yu; WANG Li-ping; HUANG Qi-zhong; CHAI Li-yuan

    2009-01-01

    With liquid petrol gas (LPG) as carbon source,carbon felt as porous perform and hydrogen as diluent,C/C composites were fast fabricated by using a multi-physics field chemical vapor infiltration (MFCVI) process in a self-made furnace.A set of orthogonal experiments were carried out to optimize parameters in terms of indices of density and graphitization degree.The results show the optimal indices can be achieved under the conditions of temperature 650 ℃,LPG concentration 80%,gas flux 60 mL/s,total pressure 20 kPa,infiltration time 15 h.The verification experiment proves the effectiveness of the orthogonal experiments.Under the optimal conditions,the graphitization degree of 75% and bulk density of 1.69 g/cm are achieved with a uniform density distribution.At the same time,a new structure is obtained.

  19. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  20. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  1. Synthesis of multi-layer graphene films on copper tape by atmospheric pressure chemical vapor deposition method

    International Nuclear Information System (INIS)

    Graphene films were successfully synthesized by atmospheric pressure chemical vapor deposition (APCVD) method. Methane (CH4) gas and copper (Cu) tapes were used as a carbon source and a catalyst, respectively. The CVD temperature and time were in the range of 800–1000 °C and 10 s to 45 min, respectively. The role of the CVD temperature and time on the growth of graphene films was investigated in detail via scanning electron microscopy (SEM) and Raman spectroscopy techniques. The results of SEM images and Raman spectra show that the quality of the graphene films was improved with increasing of CVD temperature due to the increase of catalytic activity. (paper)

  2. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, Tsukuba 305-8573 (Japan); Tanaka, Shunsuke; Hirukawa, Ayaka [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Kano, Emi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); National Institute for Materials Science, Tsukuba 305-0047 (Japan); Takeguchi, Masaki [National Institute for Materials Science, Tsukuba 305-0047 (Japan)

    2015-03-02

    A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

  3. Graphene-Based Chemical Vapor Sensors for Electronic Nose Applications

    Science.gov (United States)

    Nallon, Eric C.

    An electronic nose (e-nose) is a biologically inspired device designed to mimic the operation of the olfactory system. The e-nose utilizes a chemical sensor array consisting of broadly responsive vapor sensors, whose combined response produces a unique pattern for a given compound or mixture. The sensor array is inspired by the biological function of the receptor neurons found in the human olfactory system, which are inherently cross-reactive and respond to many different compounds. The use of an e-nose is an attractive approach to predict unknown odors and is used in many fields for quantitative and qualitative analysis. If properly designed, an e-nose has the potential to adapt to new odors it was not originally designed for through laboratory training and algorithm updates. This would eliminate the lengthy and costly R&D costs associated with materiel and product development. Although e-nose technology has been around for over two decades, much research is still being undertaken in order to find new and more diverse types of sensors. Graphene is a single-layer, 2D material comprised of carbon atoms arranged in a hexagonal lattice, with extraordinary electrical, mechanical, thermal and optical properties due to its 2D, sp2-bonded structure. Graphene has much potential as a chemical sensing material due to its 2D structure, which provides a surface entirely exposed to its surrounding environment. In this configuration, every carbon atom in graphene is a surface atom, providing the greatest possible surface area per unit volume, so that electron transport is highly sensitive to adsorbed molecular species. Graphene has gained much attention since its discovery in 2004, but has not been realized in many commercial electronics. It has the potential to be a revolutionary material for use in chemical sensors due to its excellent conductivity, large surface area, low noise, and versatile surface for functionalization. In this work, graphene is incorporated into a

  4. Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

    Science.gov (United States)

    Li, Jing; Lu, Yijiang

    2005-01-01

    A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

  5. Self-organization and nanostructure formation in chemical vapor deposition

    Science.gov (United States)

    Walgraef, Daniel

    2013-10-01

    When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonlinear diffusion terms that are of the Cahn-Hilliard type. This combination may lead, below a critical temperature, to the instability of uniform deposited layers. This instability triggers the formation of nanostructures corresponding to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by dynamical variables and not by variational arguments. According to the balance between reaction- and diffusion-induced nonlinearities, a succession of nanostructures including hexagonal arrays of dots, stripes, and localized structures of various types may be obtained. These structures may initiate different growth mechanisms, including Volmer-Weber and Frank-Van der Merwe types of growth. The relevance of this approach to the study of deposited layers of different species is discussed.

  6. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    Science.gov (United States)

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  7. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  8. Development of microforming process combined with selective chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming has been received much attention in the recent decades due to the wide use of microparts in electronics and medical purpose. For the further functionalization of these micro devices, high functional surface with noble metals and nanomaterials are strongly required in bio- and medical fields, such as bio-sensors. To realize the efficient manufacturing process, which can deform the submillimeter scale bulk structure and can construct the micro to nanometer scale structures in one process, the present study proposes a combined process of microforming for metal foils with a selective chemical vapor deposition (SCVD on the active surface of work materials. To clarify the availability of this proposed process, the feasibility of SCVD of functional materials to active surface of titanium (Ti was investigated. CVD of iron (Fe and carbon nanotubes (CNTs which construct CNTs on the patterned surface of active Ti and non-active oxidation layer were conducted. Ti thin films on silicon substrate and Fe were used as work materials and functional materials, respectively. CNTs were grown on only Ti surface. Consequently, the selectivity of the active surface of Ti to the synthesis of Fe particles in CVD process was confirmed.

  9. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  10. Structure of chemical vapor deposition titania/silica gel

    Energy Technology Data Exchange (ETDEWEB)

    Leboda, R.; Gun' ko, V.M.; Marciniak, M.; Malygin, A.A.; Malkin, A.A.; Grzegorczyk, W.; Trznadel, B.J.; Pakhlov, E.M.; Voronin, E.F.

    1999-10-01

    The structure of porous silica gel/titania synthesized using chemical vapor deposition (CVD) of titania via repeated reactions of TiCl{sub 4} with the surface and subsequent hydrolysis of residual Ti-Cl bonds at different temperatures was investigated by means of low-temperature nitrogen adsorption-desorption, X-ray diffraction (XRD), IR spectroscopy, and theoretical methods. A globular model of porous solids with corpuscular structure was applied to estimate the porosity parameters of titania/silica gel adsorbents. The utilization of this model is useful, for example, to predict conditions for synthesis of titania/silica with a specified structure. Analysis of pore parameters and fractal dimension suggests that the porosity and fractality of samples decrease with increasing amount of TiO{sub 2} covering the silica gel surface in a nonuniform layer, which represents small particles embedded in pores and larger particles formed at the outer surface of silica globules. Theoretical simulation shows that the Si-O-Ti linkages between the cover and the substrate can be easily hydrolyzed, which is in agreement with the IR data corresponding to the absence of a band at 950 cm {sup {minus}1} (characteristic of Si-O-Ti bridges) independent of the concentration of CVD-titania.

  11. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, V. I., E-mail: VZubkovspb@mail.ru; Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas' ev, A. V. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Bogdanov, S. A.; Vikharev, A. L. [Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); Butler, J. E. [St. Petersburg State Electrotechnical University (LETI), Professor Popov Street 5, 197376 St. Petersburg (Russian Federation); Institute of Applied Physics of the Russian Academy of Sciences, Ul' yanov Street 46, 603950 Nizhny Novgorod (Russian Federation); National Museum of Natural History (NMNH), P.O. Box 37012 Smithsonian Inst., Washington, D.C. 20013-7012 (United States)

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  12. Neutron detectors made from chemically vapor deposited semiconductors

    International Nuclear Information System (INIS)

    In this paper, the authors present the results of investigations on the use of semiconductors deposited by chemical vapor deposition (CVD) for the fabrication of neutron detectors. For this purpose, 20 microm thick hydrogenated amorphous silicon (a-Si:H) pin diodes and 100 microm thick polycrystalline diamond resistive detectors were fabricated. The detectors were coupled to a neutron-charged particle converter: a layer of either gadolinium or boron (isotope 10 enriched) deposited by evaporation. They have demonstrated the capability of such neutron detectors to operate at neutron fluxes ranging from 101 to 106 neutrons/cm2.s. The fabrication of large area detectors for neutron counting or cartography through the use of multichannel reading circuits is discussed. The advantages of these detectors include the ability to produce large area detectors at low cost, radiation hardness (∼ 4 Mrad for a-Si:H and ∼ 100 Mrad for diamond), and for diamond, operation at temperatures up to 500 C. These properties enable the use of these devices for neutron detection in harsh environments. Thermal neutron detection efficiency up to 22% and 3% are expected by coupling a-Si:H diodes and diamond detectors to 3 microm thick gadolinium (isotope 157) and 2 microm thick boron layers, respectively

  13. Application of chemical vapor composites (CVC) to terrestrial thermionics

    International Nuclear Information System (INIS)

    Terrestrial flame fired thermionics took a great leap forward in the earlier 1980's with the development of reliable long-lived hot shells. These results were presented by Goodale (1981). The hot shell protects the fractory emitter from oxidizing in the combustion environment. In earlier efforts with supralloys emitters it was found that superalloys were poor thermionic emitters since they operated at too low a temperature for practical and economical use as discussed by Huffman (1978). With the development of Chemical Vapor Deposited (CVD) silicon carbide and CVD tungsten, it became possible to fabricate long-lived thermionic converters. These results were shown by Goodale (1980). Further improvements were achieved with the use of oxygen additives on the electrodes. These developments made thermionics attractive for topping a power plant or as the energy conversion part of a cogeneration plant as described by Miskolczy (1982) and Goodale (1983). The feasibility of a thermonic steam boiler and a thermionic topped gas turbine plant become a possibility, as shown by Miskolczy (1980). copyright 1995 American Institute of Physics

  14. Charged impurity-induced scatterings in chemical vapor deposited graphene

    Science.gov (United States)

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-01

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  15. Grain boundaries in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    The scientific literature on grain boundaries (GBs) in graphene was reviewed. The review focuses mainly on the experimental findings on graphene grown by chemical vapor deposition (CVD) under a very wide range of experimental conditions (temperature, pressure hydrogen/hydrocarbon ratio, gas flow velocity and substrates). Differences were found in the GBs depending on the origin of graphene: in micro-mechanically cleaved graphene (produced using graphite originating from high-temperature, high-pressure synthesis), rows of non-hexagonal rings separating two perfect graphene crystallites are found more frequently, while in graphene produced by CVD—despite the very wide range of growth conditions used in different laboratories—GBs with more pronounced disorder are more frequent. In connection with the observed disorder, the stability of two-dimensional amorphous carbon is discussed and the growth conditions that may impact on the structure of the GBs are reviewed. The most frequently used methods for the atomic scale characterization of the GB structures, their possibilities and limitations and the alterations of the GBs in CVD graphene during the investigation (e.g. under e-beam irradiation) are discussed. The effects of GB disorder on electric and thermal transport are reviewed and the relatively scarce data available on the chemical properties of the GBs are summarized. GBs are complex enough nanoobjects so that it may be unlikely that two experimentally produced GBs of several microns in length could be completely identical in all of their atomic scale details. Despite this, certain generalized conclusions may be formulated, which may be helpful for experimentalists in interpreting the results and in planning new experiments, leading to a more systematic picture of GBs in CVD graphene. (paper)

  16. Catalytic hydrogenation reactors for the fine chemicals industries. Their design and operation.

    OpenAIRE

    Westerterp, K.R.; Molga, E.J.; Gelder, van, M.

    1997-01-01

    The design and operation of reactors for catalytic, hydrogenation in the fine chemical industries are discussed. The requirements for a good multiproduct catalytic hydrogenation unit as well as the choice of the reactor type are considered. Packed bed bubble column reactors operated without hydrogen recycle are recommended as the best choice to obtain a flexible reactor with good selectivities. The results of an experimental study of the catalytic hydrogenation of 2,4-dinitrotoluene in a mini...

  17. Real time chemical imaging of a working catalytic membrane reactor during oxidative coupling of methane.

    Science.gov (United States)

    Vamvakeros, A; Jacques, S D M; Middelkoop, V; Di Michiel, M; Egan, C K; Ismagilov, I Z; Vaughan, G B M; Gallucci, F; van Sint Annaland, M; Shearing, P R; Cernik, R J; Beale, A M

    2015-08-18

    We report the results from an operando XRD-CT study of a working catalytic membrane reactor for the oxidative coupling of methane. These results reveal the importance of the evolving solid state chemistry during catalytic reaction, particularly the chemical interaction between the catalyst and the oxygen transport membrane.

  18. Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method

    Directory of Open Access Journals (Sweden)

    Sang-Wook Ui

    2013-01-01

    Full Text Available Group III nitride semiconductors with direct band gaps have recently become increasingly important in optoelectronics and microelectronics applications due to their direct band gaps, which cover the whole visible spectrum and a large part of the UV range. Major developments in wide band gap III–V nitride semiconductors have recently led to the commercial production of high-temperature, high-power electronic devices, light-emitting diodes (LEDs, and laser diodes (LDs. In this study, GaN nanowires were grown on horizontal reactors by chemical vapor deposition (CVD employing a vapor-solid mechanism. Many studies have described how to control the diameters of wires in the liquid phase catalytic process, but one-dimensional nanostructures, which are grown using a noncatalytic process, are relatively unexplored due to the challenge of producing high-quality synthetic materials of controlled size. However, vapor-solid mechanisms to make synthesized nanowires are simple to implement. We obtained results from GaN nanostructures that were a preferential c-axis orientation from the substrate. The morphology and crystallinity of the GaN nanowires were characterized by field-emission scanning electron microscopy and X-ray diffraction. The chemical compositions of GaN with Mn were analyzed by energy dispersive X-ray spectroscopy. Optical properties were investigated using photo luminescence and cathode-luminescence measurements.

  19. The versatility of hot-filament activated chemical vapor deposition

    International Nuclear Information System (INIS)

    In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

  20. Review of chemical vapor deposition of graphene and related applications.

    Science.gov (United States)

    Zhang, Yi; Zhang, Luyao; Zhou, Chongwu

    2013-10-15

    Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors. PMID:23480816

  1. Molecular designing of precursors for chemical vapor deposition

    International Nuclear Information System (INIS)

    Both tin oxide and antimony oxide, can act as gas sensing material whose activity/selectivity is enhanced by the incorporation of a second metal. We are interested in the formation of bimetallic and trimetallic carboxylates and alkoxides which can be used as single source precursors for such mixed metal oxides. Sb(dmae)/sub 3/ (dmae=OCH/sub 2/CH/sub 2/(CH/sub 3/)sub 2/ has been prepared from Sb(OC/sub 2/H/sub 5/)/sub 3/ and Hdmae and used to generate the bimetallic materials Sb(dmae)/sub 3/Cd(acac)/sub 2/. Sn(acac)/sub 2/ hydrolyses to yield crystalline cage Sn/sub 4/O/sub 6/(dmae)/sub 4/. Sn(dmae)/sub 2/ can also be used to generate bimetallic materials such as [Sn(dmae)/sub 2/ Cd(acac)/sub 2/]/sub 2/]. Bimetallic and trimetallic carboxylates of general formula [R/sub 3/Ge-CHRCH/sub 2/COO]/sub 4-n/SnRn. [Where R=CH/sub 3/, C/sub 2/H/sub 5/, C/sub 6/H/sub 5/, tolyl, cyclohexyl, (CH/sub 3/)/sub 3/ Si CH/sub 2/-etc.] have been prepared and characterized by various analytic techniques. Chemical vapor deposition using Sb(dmae)/sub 3/ Cd(acac)/sub 2/ and various bimetallic carboxylates yield thin films of Cd/sub 2/Sb/sub 2/O/sub 7/ and SnOGeO respectively. (author)

  2. A new productivity function and stability criterion in chemical vapor transport processes

    NARCIS (Netherlands)

    Klosse, K.

    1975-01-01

    The crystal growth rate in a chemical vapor transport process using a closed system is analyzed on the basis of a one-dimensional configuration. A simplified model of vapor transport enables one to obtain a set of equations yielding the rates of reaction without a complete evaluation of the partial

  3. Early evaluation of potential environmental impacts of carbon nanotube synthesis by chemical vapor deposition.

    Science.gov (United States)

    Plata, Desirée L; Hart, A John; Reddy, Christopher M; Gschwend, Philip M

    2009-11-01

    The carbon nanotube (CNT) industry is expanding rapidly, yet little is known about the potential environmental impacts of CNT manufacture. Here, we evaluate the effluent composition of a representative multiwalled CNT synthesis by catalytic chemical vapor deposition (CVD) in order to provide data needed to design strategies for mitigating any unacceptable emissions. During thermal pretreatment of the reactant gases (ethene and H(2)), we found over 45 side-products were formed, including methane, volatile organic compounds (VOCs), and polycyclic aromatic hydrocarbons (PAHs). This finding suggests several environmental concerns with the existing process, including potential discharges of the potent greenhouse gas, methane (up to 1.7%), and toxic compounds such as benzene and 1,3-butadiene (up to 36000 ppmv). Extrapolating these laboratory-scale data to future industrial CNT production, we estimate that (1) contributions of atmospheric methane will be negligible compared to other existing sources and (2) VOC and PAH emissions may become important on local scales but will be small when compared to national industrial sources. As a first step toward reducing such unwanted emissions, we used continuous in situ measures of CNT length during growth and sought to identify which thermally generated compounds correlated with CNT growth rate. The results suggested that, in future CNT production approaches, key reaction intermediates could be delivered to the catalyst without thermal treatment. This would eliminate the most energetically expensive component of CVD synthesis (heating reactant gases), while reducing the formation of unintended byproducts. PMID:19924971

  4. Study of filament performance in heat transfer and hydrogen dissociation in diamond chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Hot-filament chemical vapor deposition (HFCVD) is a promising method for commercial production of diamond films.Filament performance in heat transfer and hydrogen decomposition in reactive environment was investigated. Power consumption by the filament in vacuum, helium and 2% CH4/H2 was experimentally determined in temperature range 1300℃-2200℃. Filament heat transfer mechanism in C-H reactive environment was calculated and analyzed. The result shows that due to surface carburization and slight carbon deposition, radiation in stead of hydrogen dissociation, becomes the largest contributor to power consumption. Filament-surface dissociation of H2 was observed at temperatures below 1873K, demonstrating the feasibility of diamond growth at low filament temperatures. The effective activation energies of hydrogen dissociation on several clean refractory filaments were derived from power consumption data in literatures. They are all lower than that of thermal dissociation of hydrogen, revealing the nature of catalytic dissociation of hydrogen on filament surface. Observation of substrate temperature suggested a weakerrole of atomic hydrogen recombination in heating substrates in C-H environment than in pure hydrogen.

  5. Ultrasmooth metallic foils for growth of high quality graphene by chemical vapor deposition

    Science.gov (United States)

    Procházka, Pavel; Mach, Jindřich; Bischoff, Dominik; Lišková, Zuzana; Dvořák, Petr; Vaňatka, Marek; Simonet, Pauline; Varlet, Anastasia; Hemzal, Dušan; Petrenec, Martin; Kalina, Lukáš; Bartošík, Miroslav; Ensslin, Klaus; Varga, Peter; Čechal, Jan; Šikola, Tomáš

    2014-05-01

    Synthesis of graphene by chemical vapor deposition is a promising route for manufacturing large-scale high-quality graphene for electronic applications. The quality of the employed substrates plays a crucial role, since the surface roughness and defects alter the graphene growth and cause difficulties in the subsequent graphene transfer. Here, we report on ultrasmooth high-purity copper foils prepared by sputter deposition of Cu thin film on a SiO2/Si template, and the subsequent peeling off of the metallic layer from the template. The surface displays a low level of oxidation and contamination, and the roughness of the foil surface is generally defined by the template, and was below 0.6 nm even on a large scale. The roughness and grain size increase occurred during both the annealing of the foils, and catalytic growth of graphene from methane (≈1000 °C), but on the large scale still remained far below the roughness typical for commercial foils. The micro-Raman spectroscopy and transport measurements proved the high quality of graphene grown on such foils, and the room temperature mobility of the graphene grown on the template stripped foil was three times higher compared to that of one grown on the commercial copper foil. The presented high-quality copper foils are expected to provide large-area substrates for the production of graphene suitable for electronic applications.

  6. Formation and Transport of Atomic Hydrogen in Hot-Filament Chemical Vapor Deposition Reactors

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    In this paper we focus on diamond film hot-filament chemical vapor deposition reactors where the only reactant ishydrogen so as to study the formation and transport of hydrogen atoms. Analysis of dimensionless numbers forheat and mass transfer reveals that thermal conduction and diffusion are the dominant mechanisms for gas-phaseheat and mass transfer, respectively. A simplified model has been established to simulate gas-phase temperature andH concentration distributions between the filament and the substrate. Examination of the relative importance ofhomogeneous and heterogeneous production of H atoms indicates that filament-surface decomposition of molecularhydrogen is the dominant source of H and gas-phase reaction plays a negligible role. The filament-surface dissociationrates of H2 for various filament temperatures were calculated to match H-atom concentrations observed in the liter-ature or derived from power consumption by filaments. Arrhenius plots of the filament-surface hydrogen dissociationrates suggest that dissociation of H2 at refractory filament surface is a catalytic process, which has a rather lowereffective activation energy than homogeneous thermal dissociation. Atomic hydrogen, acting as an important heattransfer medium to heat the substrate, can freely diffuse from the filament to the substrate without recombination.

  7. Poisoning of bubble propelled catalytic micromotors: the chemical environment matters

    Science.gov (United States)

    Zhao, Guanjia; Sanchez, Samuel; Schmidt, Oliver G.; Pumera, Martin

    2013-03-01

    Self-propelled catalytic microjets have attracted considerable attention in recent years and these devices have exhibited the ability to move in complex media. The mechanism of propulsion is via the Pt catalysed decomposition of H2O2 and it is understood that the Pt surface is highly susceptible to poisoning by sulphur-containing molecules. Here, we show that important extracellular thiols as well as basic organic molecules can significantly hamper the motion of catalytic microjet engines. This is due to two different mechanisms: (i) molecules such as dimethyl sulfoxide can quench the hydroxyl radicals produced at Pt surfaces and reduce the amount of oxygen gas generated and (ii) molecules containing -SH, -SSR, and -SCH3 moieties can poison the catalytically active platinum surface, inhibiting the motion of the jet engines. It is essential that the presence of such molecules in the environment be taken into consideration for future design and operation of catalytic microjet engines. We show this effect on catalytic micromotors prepared by both rolled-up and electrodeposition approaches, demonstrating that such poisoning is universal for Pt catalyzed micromotors. We believe that our findings will contribute significantly to this field to develop alternative systems or catalysts for self-propulsion when practical applications in the real environment are considered.

  8. Hydrocarbon Liquid Production from Biomass via Hot-Vapor-Filtered Fast Pyrolysis and Catalytic Hydroprocessing of the Bio-oil

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, Douglas C.; Wang, Huamin; French, Richard; Deutch, Steve; Iisa, Kristiina

    2014-08-14

    Hot-vapor filtered bio-oils were produced from two different biomass feedstocks, oak and switchgrass, and the oils were evaluated in hydroprocessing tests for production of liquid hydrocarbon products. Hot-vapor filtering reduced bio-oil yields and increased gas yields. The yields of fuel carbon as bio-oil were reduced by ten percentage points by hot-vapor filtering for both feedstocks. The unfiltered bio-oils were evaluated alongside the filtered bio-oils using a fixed bed catalytic hydrotreating test. These tests showed good processing results using a two-stage catalytic hydroprocessing strategy. Equal-sized catalyst beds, a sulfided Ru on carbon catalyst bed operated at 220°C and a sulfided CoMo on alumina catalyst bed operated at 400°C were used with the entire reactor at 100 atm operating pressure. The products from the four tests were similar. The light oil phase product was fully hydrotreated so that nitrogen and sulfur were below the level of detection, while the residual oxygen ranged from 0.3 to 2.0%. The density of the products varied from 0.80 g/ml up to 0.86 g/ml over the period of the test with a correlated change of the hydrogen to carbon atomic ratio from 1.79 down to 1.57, suggesting some loss of catalyst activity through the test. These tests provided the data needed to assess the suite of liquid fuel products from the process and the activity of the catalyst in relationship to the existing catalyst lifetime barrier for the technology.

  9. Catalytic Lignin Valorization Process for the Production of Aromatic Chemicals and Hydrogen

    NARCIS (Netherlands)

    Zakzeski, J.; Jongerius, A.L.; Bruijnincx, P.C.A.; Weckhuysen, B.M.

    2012-01-01

    With dwindling reserves of fossil feedstock as a resource for chemicals production, the fraction of chemicals and energy supplied by alternative, renewable resources, such as lignin, can be expected to increase in the foreseeable future. Here, we demonstrate a catalytic process to valorize lignin (e

  10. An efficient synthesis of graphenated carbon nanotubes over the tailored mesoporous molecular sieves by chemical vapor deposition

    International Nuclear Information System (INIS)

    Highlights: ► Tailored 3D cubic Ni/KIT-6 with large pores was synthesized successfully. ► The new hybrid g-CNTs in large scale were synthesized using Ni/KIT-6 by CVD method. ► The use of mesoporous material by CVD method would be an ideal choice to prepare g-CNTs at reasonable cost. ► This type of g-CNTs might be a new avenue for nano-electronic applications. - Abstract: The new hybrid of graphenated carbon nanotubes (g-CNTs) was superior to either CNTs or graphene. Mesoporous 3D cubic Ni/KIT-6 were synthesized hydrothermally through organic template route and then were used as catalytic template for the production of g-CNTs using acetylene as a carbon precursor by chemical vapor deposition (CVD) method. The deposited new hybrid carbon materials were purified and analyzed by various physico-chemical techniques such as XRD, TGA, SEM, TEM and Raman spectroscopy techniques. The graphitization of CNTs was confirmed by TGA and HRTEM studies. Thermal stability, surface morphology, and structural morphology of these materials were revealed by TGA, SEM and TEM analysis, respectively. Moreover, the tailored mesoporous Ni/KIT-6 molecular sieves were found to possess better quality and massive quantity of g-CNTs produced compared to other catalytic template route

  11. An efficient synthesis of graphenated carbon nanotubes over the tailored mesoporous molecular sieves by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Atchudan, R. [Department of Applied Chemistry, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Department of Chemistry, CEG Campus, Anna University, Chennai 600025 (India); Joo, Jin., E-mail: joojin@knu.ac.kr [Department of Applied Chemistry, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Pandurangan, A., E-mail: pandurangan_a@yahoo.com [Department of Chemistry, CEG Campus, Anna University, Chennai 600025 (India)

    2013-06-01

    Highlights: ► Tailored 3D cubic Ni/KIT-6 with large pores was synthesized successfully. ► The new hybrid g-CNTs in large scale were synthesized using Ni/KIT-6 by CVD method. ► The use of mesoporous material by CVD method would be an ideal choice to prepare g-CNTs at reasonable cost. ► This type of g-CNTs might be a new avenue for nano-electronic applications. - Abstract: The new hybrid of graphenated carbon nanotubes (g-CNTs) was superior to either CNTs or graphene. Mesoporous 3D cubic Ni/KIT-6 were synthesized hydrothermally through organic template route and then were used as catalytic template for the production of g-CNTs using acetylene as a carbon precursor by chemical vapor deposition (CVD) method. The deposited new hybrid carbon materials were purified and analyzed by various physico-chemical techniques such as XRD, TGA, SEM, TEM and Raman spectroscopy techniques. The graphitization of CNTs was confirmed by TGA and HRTEM studies. Thermal stability, surface morphology, and structural morphology of these materials were revealed by TGA, SEM and TEM analysis, respectively. Moreover, the tailored mesoporous Ni/KIT-6 molecular sieves were found to possess better quality and massive quantity of g-CNTs produced compared to other catalytic template route.

  12. Catalytic Upgrading of Biomass Fast Pyrolysis Vapors with Nano Metal Oxides: An Analytical Py-GC/MS Study

    Directory of Open Access Journals (Sweden)

    Qiang Lu

    2010-11-01

    Full Text Available Fast pyrolysis of poplar wood followed with catalytic cracking of the pyrolysis vapors was performed using analytical pyrolysis-gas chromatography/mass spectrometry (Py-GC/MS. The catalysts applied in this study were nano MgO, CaO, TiO2, Fe2O3, NiO and ZnO. These catalysts displayed different catalytic capabilities towards the pyrolytic products. The catalysis by CaO significantly reduced the levels of phenols and anhydrosugars, and eliminated the acids, while it increased the formation of cyclopentanones, hydrocarbons and several light compounds. ZnO was a mild catalyst, as it only slightly altered the pyrolytic products. The other four catalysts all decreased the linear aldehydes dramatically, while the increased the ketones and cyclopentanones. They also reduced the anhydrosugars, except for NiO. Moreover, the catalysis by Fe2O3 resulted in the formation of various hydrocarbons. However, none of these catalysts except CaO were able to greatly reduce the acids.

  13. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  14. Fluidized bed as a solid precursor delivery system in a chemical vapor deposition reactor

    OpenAIRE

    Vahlas, Constantin; Caussat, Brigitte; Senocq, François; Gladfelter, Wayne L.; Sarantopoulos, Christos; Toro, David; Moersch, Tyler

    2005-01-01

    Chemical vapor deposition (CVD) using precursors that are solids at operating temperatures and pressures, presents challenges due to their relatively low vapor pressures. In addition, the sublimation rates of solid state precursors in fixed bed reactors vary with particle and bed morphology. In a recent patent application, the use of fluidized bed (FB) technology has been proposed to provide high, reliable, and reproducible flux of such precursors in CVD processes. In the present contribution...

  15. MBMS studies of gas-phase kinetics in diamond chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fox, C.A. [Stanford Univ., CA (United States); McMaster, M.C. [IBM San Jose, CA (United States); Tung, D.M. [Sandia National Labs., Livermore, CA (United States)] [and others

    1995-03-01

    A molecular beam mass spectrometer system (MBMS) has been used to determine the near-surface gaseous composition involved in the low pressure chemical vapor deposition of diamond. With this system, radical and stable species can be detected with a sensitivity better than 10 ppm. Threshold ionization techniques have been employed to distinguish between radical species in the deposition environment from radical species generated by parent molecule cracking. An extensive calibration procedure was used to enable the quantitative determination of H-atom and CH{sub 3} radical mole fractions. Using the MBMS system, the gaseous composition involved in LPCVD of diamond has been measured for a wide variety of deposition conditions, including hot-filament gas activation, microwave-plasma gas activation, and a variety of precursor feed mixtures (ex: CH{sub 4}/H{sub 2}, C{sub 2}H{sub 2}/H{sub 2}). For microwave-plasma activation (MPCVD), the radical concentrations (H-atom and CH{sub 3} radicals) are independent of the identity of the precursor feed gas provided the input carbon mole fraction is constant. However, in hot-filament diamond deposition (HFCVD), the atomic hydrogen concentration decreased by an order of magnitude as the mole fraction of carbon in the precursor mixture is increased to .07; this sharp reduction has been attributed to filament poisoning of the catalytic tungsten surface via hydrocarbon deposition. Additionally, the authors find that the H-atom concentration is independent of the substrate temperature for both hot-filament and microwave plasma deposition; radial H-atom diffusion is invoked to explain this observation.

  16. High-Temperature Compatible Nickel Silicide Thermometer And Heater For Catalytic Chemical Microreactors

    DEFF Research Database (Denmark)

    Jensen, Søren; Quaade, U.J.; Hansen, Ole

    2005-01-01

    Integration of heaters and thermometers is important for agile and accurate control and measurement of the thermal reaction conditions in microfabricated chemical reactors (microreactors). This paper describes development and operation of nickel silicide heaters and temperature sensors...... for temperatures exceeding 700 °C. The heaters and thermometers are integrated with chemical microreactors for heterogeneous catalytic conversion of gasses, and thermally activated catalytic conversion of CO to CO2 in the reactors is demonstrated. The heaters and thermometers are shown to be compatible...... with operation temperatures exceeding 700 °C....

  17. Formation of TiO2 Thin Films using NH3 as Catalyst by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Jung, Sung-Hoon; Kang, Sang-Won

    2001-05-01

    We have studied metalorganic chemical vapor deposition of TiO2 thin films using titanium tetra-isopropoxide [TTIP, Ti(O--C3H7)4] and NH3 as a catalyst at deposition temperatures ranging from 250 to 365°C. At deposition temperatures above 330°C, pyrolytic self-decomposition of TTIP is dominant regardless of the use of NH3, and the activation energy for TiO2 film formation is 152 kJ/mol. At deposition temperatures below 330°C, the films can be formed with the help of the catalytic activity of NH3, and the activation energy is reduced to 55 kJ/mol. TiO2 films deposited through the pyrolytic self-decomposition of TTIP have an anatase structure before and after performing post-deposition annealing in oxygen ambient for 30 min at 750°C. On the other hand, the as-deposited films formed through the catalytic reaction of TTIP with NH3 incorporate nitrogen impurities and have microcrystallites of the rutile structure within the amorphous matrix. However, the post-deposition annealing, the nitrogen impurities are completely removed from the films, and the films are converted into polycrystalline TiO2 films with the rutile structure, which have a high dielectric constant of 82 and a low leakage current.

  18. Assessment and control of chemical risk from organic vapors for attendants in a gas station

    Directory of Open Access Journals (Sweden)

    Stephanie Ehmig Santillán

    2015-12-01

    Full Text Available This research comprises monitoring, assessment and recommendations for chemical risk originating from organic vapors (benzene, toluene and xylene of fuel (super and extra gasoline to which attendants at a gas station are exposed. Given the concentration measured of organic vapors (benzene, toluene and xylene the chemical risk to which attendants are exposed in the supply area is acceptable. Control measures are recommended to ensure healthy working conditions for gas station attendants and also to avoid occurrence of occupational diseases in the medium or long term

  19. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    OpenAIRE

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal w...

  20. Synthesis of one-dimensional boron-related nanostructures by chemical vapor deposition

    Science.gov (United States)

    Guo, Li

    microwave plasma enhanced chemical vapor deposition process using gas reactions of diborane and ammonia. The catalytic growth of BNNTs done in this work provided a novel way to selectively grow BNNTs in thin film form on Ni or Co coated Si substrates. For boron nanowires, the co-existence of two growth mechanisms was discovered having completely different morphology and crystallinity using the thermal CVD process. The metal catalyst assisted the growth of the crystalline BNWs by vapor-liquid-solid mechanism, which amorphous BNWs were produced without the use of the catalyst. These results are expected to open up more pathways to scale up the fabrication of vertically aligned BNNTs and BNWs for studies of their properties and applications.

  1. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    Science.gov (United States)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  2. Chemical deactivation of Cu-SSZ-13 ammonia selective catalytic reduction (NH3-SCR) systems

    NARCIS (Netherlands)

    Lezcano-Gonzalez, I.; Deka, U.; van der Bij, H. E.; Paalanen, P.; Arstad, B.; Weckhuysen, B. M.; Beale, A. M.

    2014-01-01

    The chemical deactivation of Cu-SSZ-13 Ammonia Selective Catalytic Reduction (NH3-SCR) catalysts by Pt, Zn, Ca and P has been systematically investigated using a range of analytical techniques in order to study the influence on both the zeolitic framework and the active Cu2+ ions. The results obtain

  3. Evaluation of Chemical Warfare Agent Percutaneous Vapor Toxicity: Derivation of Toxicity Guidelines for Assessing Chemical Protective Ensembles.

    Energy Technology Data Exchange (ETDEWEB)

    Watson, A.P.

    2003-07-24

    Percutaneous vapor toxicity guidelines are provided for assessment and selection of chemical protective ensembles (CPEs) to be used by civilian and military first responders operating in a chemical warfare agent vapor environment. The agents evaluated include the G-series and VX nerve agents, the vesicant sulfur mustard (agent HD) and, to a lesser extent, the vesicant Lewisite (agent L). The focus of this evaluation is percutaneous vapor permeation of CPEs and the resulting skin absorption, as inhalation and ocular exposures are assumed to be largely eliminated through use of SCBA and full-face protective masks. Selection of appropriately protective CPE designs and materials incorporates a variety of test parameters to ensure operability, practicality, and adequacy. One aspect of adequacy assessment should be based on systems tests, which focus on effective protection of the most vulnerable body regions (e.g., the groin area), as identified in this analysis. The toxicity range of agent-specific cumulative exposures (Cts) derived in this analysis can be used as decision guidelines for CPE acceptance, in conjunction with weighting consideration towards more susceptible body regions. This toxicity range is bounded by the percutaneous vapor estimated minimal effect (EME{sub pv}) Ct (as the lower end) and the 1% population threshold effect (ECt{sub 01}) estimate. Assumptions of exposure duration used in CPE certification should consider that each agent-specific percutaneous vapor cumulative exposure Ct for a given endpoint is a constant for exposure durations between 30 min and 2 hours.

  4. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    Science.gov (United States)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  5. Two dimensional transition metal dichalcogenides grown by chemical vapor deposition

    OpenAIRE

    Tsang, Ka-yi; 曾家懿

    2014-01-01

    An atomically thin film of semiconducting transition metal dichalcogenides (TMDCs) is emerging as a class of key materials in chemistry and physics due to their remarkable chemical and electronic properties. The TMDCs are layered materials with weak out-of-plane van der Waals (vdW) interaction and strong in-plane covalent bonding enabling scalable exfoliation into two-dimensional (2D) layers of atomic thickness. The growth techniques to prepare these 2D TMDC materials in high yield and large ...

  6. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    OpenAIRE

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-01-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality compar...

  7. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    Science.gov (United States)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  8. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  9. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Scholtes, T.L.M.; Nanver, L.K.

    2012-01-01

    The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and

  10. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina;

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar...

  11. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  12. Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

    NARCIS (Netherlands)

    Aresta, G.; Palmans, J.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier

  13. An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon waf

  14. Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

    OpenAIRE

    Cao, H. L.; Yu, Q. K.; Jauregui, L. A.; Tian, J; Wu, W.; Z. Liu; Jalilian, R.; Benjamin, D. K.; Jiang, Z.; J. Bao; Pei, S S; Chen, Y P

    2009-01-01

    We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 in.) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on microdevices fabricated from such CVD graphene, displaying ambipolar field ...

  15. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  16. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Well-aligned ZnO nanowires were grown on Si substrate by chemical vapor deposition.The experimental results showed that the density of nanowires was related to the heating process and growth temperature.High-density ZnO nanowires were obtained under optimal conditions.The growth mechanism of the ZnO nanowires was presented as well.

  17. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  18. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    Science.gov (United States)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  19. Synthesis of carbon nanotubes by catalytic vapor decomposition (CVD) method: Optimization of various parameters for the maximum yield

    Indian Academy of Sciences (India)

    Kanchan M Samant; Santosh K Haram; Sudhir Kapoor

    2007-01-01

    This paper describes an effect of flow rate, carrier gas (H2, N2 and Ar) composition, and amount of benzene on the quality and the yield of carbon nanotubes (CNTs) formed by catalytical vapour decomposition (CVD) method. The flow and mass control of gases and precursor vapors respectively were found to be interdependent and therefore crucial in deciding the quality and yield of CNTs. We have achieved this by modified soap bubble flowmeter, which controlled the flow rates of two gases, simultaneously. With the help of this set-up, CNTs could be prepared in any common laboratory. Raman spectroscopy indicated the possibilities of formation of single-walled carbon nanotubes (SWNTs). From scanning electron microscopy (SEM) measurements, an average diameter of the tube/bundle was estimated to be about 70 nm. The elemental analysis using energy dispersion spectrum (EDS) suggested 96 at.wt.% carbon along with ca. 4 at.wt. % iron in the as-prepared sample. Maximum yield and best quality CNTs were obtained using H2 as the carrier gas.

  20. Vertically aligned peptide nanostructures using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Vasudev, Milana C; Koerner, Hilmar; Singh, Kristi M; Partlow, Benjamin P; Kaplan, David L; Gazit, Ehud; Bunning, Timothy J; Naik, Rajesh R

    2014-02-10

    In this study, we utilize plasma-enhanced chemical vapor deposition (PECVD) for the deposition of nanostructures composed of diphenylalanine. PECVD is a solvent-free approach and allows sublimation of the peptide to form dense, uniform arrays of peptide nanostructures on a variety of substrates. The PECVD deposited d-diphenylalanine nanostructures have a range of chemical and physical properties depending on the specific discharge parameters used during the deposition process. PMID:24400716

  1. Improved sensor selectivity for chemical vapors using organic thin-film transistors

    OpenAIRE

    Royer, James Edward

    2012-01-01

    Organic thin-film transistors (OTFTs) offer unique methods for chemical vapor detection due to multiple device parameters which are influenced by reactive gases. The simplest conventional readout for OTFT sensors is the drain current; however, the drain current is dependent on changes in fundamental device characteristics such as mobility and/or threshold voltage. The chemical properties of the analyte determine whether the mobility or threshold voltage response is dominant for the OTFT. The ...

  2. Growth and properties of few-layer graphene prepared by chemical vapor deposition

    OpenAIRE

    Park, Hye Jin; Meyer, Jannik; Roth, Siegmar; Skakalova, Viera

    2009-01-01

    The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process ...

  3. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  4. Ballistic transport in graphene grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene

  5. Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2015-09-15

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  6. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  7. PARTICLE COATING BY CHEMICAL VAPOR DEPOSITION IN A FLUIDI7ED BED REACTOR

    Institute of Scientific and Technical Information of China (English)

    Gregor; Czok; Joachim; Werther

    2005-01-01

    Aluminum coatings were created onto glass beads by chemical vapor deposition in a fluidized bed reactor at different temperatures. Nitrogen was enriched with Triisobutylaluminum (TIBA) vapor and the latter was thermally decomposed inside the fluidized bed to deposit the elemental aluminum. To ensure homogeneous coating on the bed material, the fluidizing conditions necessary to avoid agglomeration were investigated for a broad range of temperatures.The deposition reaction was modeled on the basis of a discrete particle simulation to gain insight into homogeneity and thickness of the coating throughout the bed material. In particular, the take-up of aluminum was traced for selected particles that exhibited a large mass of deposited aluminum.

  8. Discrete formulation of mixed finite element methods for vapor deposition chemical reaction equations

    Institute of Scientific and Technical Information of China (English)

    LUO Zhen-dong; ZHOU Yan-jie; ZHU Jiang

    2007-01-01

    The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical modes by the following governing nonlinear partial differential equations containing velocity vector,temperature field,pressure field,and gas mass field.The mixed finite element(MFE)method is employed to study the system of equations for the vapor deposition chemical reaction processes.The semidiscrete and fully discrete MFE formulations are derived.And the existence and convergence(error estimate)of the semidiscrete and fully discrete MFE solutions are deposition chemical reaction processes,the numerical solutions of the velocity vector,the temperature field,the pressure field,and the gas mass field can be found out simultaneonsly.Thus,these researches are not only of important theoretical means,but also of extremely extensive applied vistas.

  9. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    Science.gov (United States)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  10. Aged nano-structured platinum based catalyst: effect of chemical treatment on adsorption and catalytic activity.

    Science.gov (United States)

    Shim, Wang Geun; Nahm, Seung Won; Park, Hyuk Ryeol; Yun, Hyung Sun; Seo, Seong Gyu; Kim, Sang Chai

    2011-02-01

    To examine the effect of chemical treatment on the adsorption and catalytic activity of nanostructured platinum based catalyst, the aged commercial Pt/AC catalyst was pretreated with sulfuric acid (H2SO4) and a cleaning agent (Hexane). Several reliable methods such as nitrogen adsorption, X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and inductively coupled plasma (ICP) were employed to characterize the aged Pt/AC catalyst and its chemically pretreated Pt/AC catalysts. The catalytic and adsorption activities of nano-structured heterogeneous Pt/AC catalyst were investigated on the basis of toluene oxidation and adsorption isotherm data. In addition, the adsorption isotherms of toluene were used to calculate the adsorption energy distribution functions for the parent catalyst and its pre-treated nano-structured Pt/AC catalysts. It was found that sulfuric acid aqueous treatment can enhance the catalytic performance of aged Pt/AC catalyst toward catalytic oxidation of toluene. It was also shown that a comparative analysis of the energy distribution functions for nano-structured Pt/AC catalysts as well as the pore size distribution provides valuable information about their structural and energetic heterogeneity.

  11. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  12. Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

    Science.gov (United States)

    Opila, Elizabeth J.

    1994-01-01

    The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

  13. Effects of growth pressure on morphology of ZnO nanostructures by chemical vapor transport

    Science.gov (United States)

    Babu, Eadi Sunil; Kim, Sungjin; Song, Jung-Hoon; Hong, Soon-Ku

    2016-08-01

    The effect of growth pressure on the morphology of the ZnO nanostructures in chemical vapor transport by using Zn powder and oxygen as source materials has been investigated. Highly uniform aligned ZnO nanorods or multifaceted tripod structures were grown depending on the growth pressure. The mechanism governing the morphology change was explained by the relative concentration of Zn vapor and supersaturation based on experimental observations. It was concluded that heterogeneous nucleation on the substrate is enhanced at low growth pressure, while homogeneous nucleation from vapor phase is enhanced at high growth pressure. The difference resulted in different morphology of ZnO nanostructures. ZnO nanorods grown at optimized condition were used for the fabrication of gas sensor for the detection of H2 gas.

  14. Catalytic activity of platinum on ruthenium electrodes with modified (electro)chemical states.

    Science.gov (United States)

    Park, Kyung-Won; Sung, Yung-Eun

    2005-07-21

    Using Pt on Ru thin-film electrodes with various (electro)chemical states designed by the sputtering method, the effect of Ru states on the catalytic activity of Pt was investigated. The chemical and electrochemical properties of Pt/Ru thin-film samples were confirmed by X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry. In addition, Pt nanoparticles on Ru metal or oxide for an actual fuel cell system showed an effect of Ru states on the catalytic activity of Pt in methanol electrooxidation. Finally, it was concluded that such an enhancement of methanol electrooxidation on the Pt is responsible for Ru metallic and/or oxidation sites compared to pure Pt without any Ru state. PMID:16852701

  15. Graphene-Semiconductor Catalytic Nanodiodes for Quantitative Detection of Hot Electrons Induced by a Chemical Reaction.

    Science.gov (United States)

    Lee, Hyosun; Nedrygailov, Ievgen I; Lee, Young Keun; Lee, Changhwan; Choi, Hongkyw; Choi, Jin Sik; Choi, Choon-Gi; Park, Jeong Young

    2016-03-01

    Direct detection of hot electrons generated by exothermic surface reactions on nanocatalysts is an effective strategy to obtain insight into electronic excitation during chemical reactions. For this purpose, we fabricated a novel catalytic nanodiode based on a Schottky junction between a single layer of graphene and an n-type TiO2 layer that enables the detection of hot electron flows produced by hydrogen oxidation on Pt nanoparticles. By making a comparative analysis of data obtained from measuring the hot electron current (chemicurrent) and turnover frequency, we demonstrate that graphene's unique electronic structure and extraordinary material properties, including its atomically thin nature and ballistic electron transport, allow improved conductivity at the interface between the catalytic Pt nanoparticles and the support. Thereby, graphene-based nanodiodes offer an effective and facile way to approach the study of chemical energy conversion mechanisms in composite catalysts with carbon-based supports. PMID:26910271

  16. Solid-phase reduction of Cr2O3 under chemical catalytic conditions

    Science.gov (United States)

    Simonov, V. K.; Grishin, A. M.

    2016-06-01

    The kinetics of the solid-phase reduction of Cr2O3 with carbon under chemical catalytic action on the reacting system is studied. A significant intensification of the process in the presence of small amounts of potassium and sodium salts is established. The concepts of the catalyst action mechanism are considered and experimentally substantiated. Manufacture of iron-chromium master alloys with a restricted content of carbon can be organized at low temperatures, and they can be used in steelmaking.

  17. Directly catalytic upgrading bio-oil vapor produced by prairie cordgrass pyrolysis over Ni/HZSM-5 using a two stage reactor

    Directory of Open Access Journals (Sweden)

    Shouyun Cheng

    2015-06-01

    Full Text Available Catalytic cracking is one of the most promising processes for thermochemical conversion of biomass to advanced biofuels in recent years. However, current effectiveness of catalysts and conversion efficiency still remain challenges. An investigation of directly catalytic upgrading bio-oil vapors produced in prairie cordgrass (PCG pyrolysis over Ni/HZSM-5 and HZSM-5 in a two stage packed-bed reactor was carried out. The Ni/HZSM-5 catalyst was synthesized using an impregnation method. Fresh and used catalysts were characterized by BET and XRD. The effects of catalysts on pyrolysis products yields and quality were examined. Both catalysts improved bio-oil product distribution compared to non-catalytic treatment. When PCG pyrolysis vapor was treated with absence of catalyst, the produced bio-oils contained higher alcohols (10.97% and furans (10.14%. In contrast, the bio-oils contained the second highest hydrocarbons (34.97%)and the highest phenols (46.97% when PCG pyrolysis vapor was treated with Ni/HZSM-5. Bio-oils containing less ketones and aldehydes were produced by both Ni/HZSM-5 and HZSM-5, but no ketones were found in Ni/HZSM-5 treatment compared to HZSM-5 (2.94%. The pyrolysis gas compositions were also affected by the presenting of HZSM-5 or Ni/HZSM-5 during the catalytic upgrading process. However, higher heating values and elemental compositions (C, H and N of bio-chars produced in all treatments had no significant difference.

  18. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Low pressure chemical vapor deposition of niobium coating on silicon carbide

    International Nuclear Information System (INIS)

    Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl5. Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl5 on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.

  20. A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials

    Institute of Scientific and Technical Information of China (English)

    GAO Jian; LI Jian-ping; ZENG Xiang-cai; MA Wen-cun

    2004-01-01

    In this paper, the dense and columnar crystalline TiCN coating layers with very good bonding strength between a layer and another layer was deposited using Medium Temperature Chemical Vapor Deposition (MT-CVD) where CH3CN organic composite with C/N atomic clusters etc. was utilized at 700 ~ 900 ℃. Effect of coating processing parameters, such as coating temperature, pressure and different gas flow quantity on structures and properties of TiCN coating layers were investigated. The super coating mechanis mand structures were analyzed. The new coating processing parameters and properties of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology.

  1. IR study on surface chemical properties of catalytic grown carbon nanotubes and nanofibers

    Institute of Scientific and Technical Information of China (English)

    Li-hua TENG; Tian-di TANG

    2008-01-01

    In this study, the surface chemical properties of carbon nanotubes (CNTs) and carbon nanofibers (CNFs) grown by catalytic decomposition of methane on nickel and cobalt based catalysts were studied by DRIFT (Diffuse Reflectance Infrared Fourier Transform) and transmission Infrared (IR) spectroscopy. The results show that the surface exists not only carbon-hydrogen groups, but also carboxyl, ketene or quinone (carbonyl) oxygen-containing groups. These functional groups were formed in the process of the material growth, which result in large amount of chemical defect sites on the walls.

  2. Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Poet, Torka S.; Timchalk, Chuck

    2006-03-24

    A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

  3. Spectroscopy of Individual Single-Walled Carbon Nanotubes and their Synthesis via Chemical Vapor Deposition

    OpenAIRE

    Kiowski, Oliver

    2008-01-01

    A chemical vapor deposition (CVD) reactor was designed, built and used to grow vertically and horizontally aligned carbon nanotube arrays. The as-grown nanotubes were investigated on a single tube level using nearinfrared photoluminescence (PL) microscopy as well as Raman, atomic force and scanning electron microscopy (SEM). For photoluminescence excitation (PLE) spectroscopy of individual, semiconducting single-walled carbon nanotubes (SWNTs), a specialized PL set-up was constructed.

  4. Corrosion resistant chemical vapor deposited coatings for SiC and Si3N4

    OpenAIRE

    Graham, David W

    1993-01-01

    Silicon carbide and silicon nitride turbine engine components are susceptible to hot corrosion by molten sodium sulfate salts which are formed from impurities in the engine's fuel and air intake. Several oxide materials were identified which may be able to protect these components from corrosion and preserve their structural properties. Ta20, coatings were identified as one of the most promising candidates. Thermochemical calculations showed that the chemical vapor deposition(CVD) of tantalum...

  5. Super-Hydrophobic and Oloephobic Crystalline Coatings by Initiated Chemical Vapor Deposition

    OpenAIRE

    Coclite, Anna Maria; Shi, Yujun; Gleason, Karen K.

    2013-01-01

    Preferred crystallographic orientation (texture) in thin films frequently has a strong effect on the properties of the materials and it is important for stable surface properties. Organized molecular films of poly-perfluorodecylacrylate p(PFDA) were deposited by initiated Chemical Vapor Deposition (iCVD). The high tendency of p(PFDA) to crystallize has been fully retained in the polymers prepared by iCVD. The degree of crystallinity and the preferred orientation of the perfluoro side chains, ...

  6. Polyimide (PI) films by chemical vapor deposition (CVD): Novel design, experiments and characterization

    OpenAIRE

    Puig-Pey González, Jaime; Lamure, Alain; Senocq, François

    2007-01-01

    International audience Polyimide (PI) has been deposited by chemical vapor deposition (CVD) under vacuum over the past 20 years. In the early nineties, studies, experiences and characterization were mostly studied as depositions from the co-evaporation of the dianhydride and diamine monomers. Later on, several studies about its different applications due to its interesting mechanical and electrical properties enhanced its development. Nowadays, not many researches around PI deposition are ...

  7. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    P. Haniam

    2014-01-01

    Full Text Available Thin films of cobalt oxides (CoO and Co3O4 fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

  8. Synthesis of boron-doped graphene monolayers using the sole solid feedstock by chemical vapor deposition.

    Science.gov (United States)

    Wang, Huan; Zhou, Yu; Wu, Di; Liao, Lei; Zhao, Shuli; Peng, Hailin; Liu, Zhongfan

    2013-04-22

    Substitutionally boron-doped monolayer graphene film is grown on a large scale by using a sole phenylboronic acid as the source in a low-pressure chemical vapor deposition system. The B-doped graphene film is a homogeneous monolayer with high crystalline quality, which exhibits a stable p-type doping behavior with a considerably high room-temperature carrier mobility of about 800 cm(2) V(-1) s(-1) . PMID:23463717

  9. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    OpenAIRE

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C; Jung, W.; Kim, M.; Park, C. -Y.

    2011-01-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall trans...

  10. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

    OpenAIRE

    Ma, Teng; Ren, Wencai; Zhang, Xiuyun; Liu, Zhibo; Gao, Yang; Yin, Li-Chang; Ma, Xiu-Liang; Ding, Feng; Cheng, Hui-Ming

    2013-01-01

    Controlled synthesis of wafer-sized single crystalline high-quality graphene is a great challenge of graphene growth by chemical vapor deposition because of the complicated kinetics at edges that govern the growth process. Here we report the synthesis of single-crystal graphene domains with tunable edges from zigzag to armchair via a growth–etching–regrowth process. Both growth and etching of graphene are strongly dependent on the edge structure. This growth/etching behavior is well explained...

  11. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef;

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi...... increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  12. Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method

    OpenAIRE

    Mohammad Mahdi Tavakoli; Leilei Gu; Yuan Gao; Claas Reckmeier; Jin He; Rogach, Andrey L; Yan Yao; Zhiyong Fan

    2015-01-01

    Organometallic trihalide perovskites are promising materials for photovoltaic applications, which have demonstrated a rapid rise in photovoltaic performance in a short period of time. We report a facile one-step method to fabricate planar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion efficiency of up to 11.1%. We performed a systematic optimization of CVD parameters such as temperature and growth time to obtain high quality films of CH...

  13. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  14. Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    王升高; 汪建华; 马志斌; 王传新; 满卫东

    2005-01-01

    Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550 ℃. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.

  15. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    OpenAIRE

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of...

  16. Converting Light Energy to Chemical Energy: A New Catalytic Approach for Sustainable Environmental Remediation

    Science.gov (United States)

    2016-01-01

    We report a synthetic approach to form cubic Cu2O/Pd composite structures and demonstrate their use as photocatalytic materials for tandem catalysis. Pd nanoparticles were deposited onto Cu2O cubes, and their tandem catalytic reactivity was studied via the reductive dehalogenation of polychlorinated biphenyls. The Pd content of the materials was gradually increased to examine its influence on particle morphology and catalytic performance. Materials were prepared at different Pd amounts and demonstrated a range of tandem catalytic reactivity. H2 was generated via photocatalytic proton reduction initiated by Cu2O, followed by Pd-catalyzed dehalogenation using in situ generated H2. The results indicate that material morphology and composition and substrate steric effects play important roles in controlling the overall reaction rate. Additionally, analysis of the postreacted materials revealed that a small number of the cubes had become hollow during the photodechlorination reaction. Such findings offer important insights regarding photocatalytic active sites and mechanisms, providing a pathway toward converting light-based energy to chemical energy for sustainable catalytic reactions not typically driven via light.

  17. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  18. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    Science.gov (United States)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  19. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  20. LOW PRESSURE CHEMICAL VAPOR DEPOSITION (CVD) ON OXIDE AND NONOXIDE CERAMIC CUTTING TOOLS

    OpenAIRE

    Layyous, A.; Wertheim, R.

    1989-01-01

    Cutting tools made of Al2O3+TiC, silicon nitride, carbide, and stabilized ZrO2 were coated by chemical vapor deposition (CVD) with a multilayer of TiN, TiCN, TiC and Al2O3 in different combinations. The adhesion of the coated layers to the substrate, and the structure of the layers were investigated by optical microscopy, scanning electron microscopy (SEM) and Auger spectroscopy. This made it possible to analyze the chemical interaction between the substrate and the TiN at 1000°C. The cutting...

  1. Fabrication of a multifunctional carbon nanotube "cotton" yarn by the direct chemical vapor deposition spinning process.

    Science.gov (United States)

    Zhong, Xiao-Hua; Li, Ya-Li; Feng, Jian-Min; Kang, Yan-Ru; Han, Shuai-Shuai

    2012-09-21

    A continuous cotton-like carbon nanotube fiber yarn, consisting of multiple threads of high purity double walled carbon nanotubes, was fabricated in a horizontal CVD gas flow reactor with water vapor densification by the direct chemical vapor deposition spinning process. The water vapor interaction leads to homogeneous shrinking of the CNT sock-like assembly in the gas flow. This allows well controlled continuous winding of the dense thread inside the reactor. The CNT yarn is quite thick (1-3 mm), has a highly porous structure (99%) while being mechanically strong and electrically conductive. The water vapor interaction leads to homogeneous oxidation of the CNTs, offering the yarn oxygen-functionalized surfaces. The unique structure and surface of the CNT yarn provide it multiple processing advantages and properties. It can be mechanically engineered into a dense yarn, infiltrated with polymers to form a composite and mixed with other yarns to form a blend, as demonstrated in this research. Therefore, this CNT yarn can be used as a "basic yarn" for various CNT based structural and functional applications.

  2. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H2O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF2. • Carbonaceous contamination from the precursor was minimal

  3. Determination of cadmium in water samples by fast pyrolysis-chemical vapor generation atomic fluorescence spectrometry

    Science.gov (United States)

    Zhang, Jingya; Fang, Jinliang; Duan, Xuchuan

    2016-08-01

    A pyrolysis-vapor generation procedure to determine cadmium by atomic fluorescence spectrometry has been established. Under fast pyrolysis, cadmium ion can be reduced to volatile cadmium species by sodium formate. The presence of thiourea enhanced the efficiency of cadmium vapor generation and eliminated the interference of copper. The possible mechanism of vapor generation of cadmium was discussed. The optimization of the parameters for pyrolysis-chemical vapor generation, including pyrolysis temperature, amount of sodium formate, concentration of hydrochloric acid, and carrier argon flow rate were carried out. Under the optimized conditions, the absolute and concentration detection limits were 0.38 ng and 2.2 ng ml- 1, respectively, assuming that 0.17 ml of sample was injected. The generation efficiency of was 28-37%. The method was successfully applied to determine trace amounts of cadmium in two certified reference materials of Environmental Water (GSB07-1185-2000 and GSBZ 50009-88). The results were in good agreement with the certified reference values.

  4. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    Science.gov (United States)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  5. EFFECTS OF FEED CONCENTRATION AND WATER VAPOR ON CATALYTIC COMBUSTION OF ETHYL ACETATE AND BENZENE IN AIR OVER CR-ZSM-5 CATALYST

    Directory of Open Access Journals (Sweden)

    Ahmad Zuhairi Abdullah

    2010-09-01

    Full Text Available Catalytic combustion of ethyl acetate (EAc and benzene (Bz over chromium exchanged ZSM-5 (Si/Al=240 is reported. An 11 mm i.d. fixed-bed catalytic reactor, operated at temperatures between 100 oC and 500 oC, and under excess oxygen condition, was used for the catalytic activity measurement. Apparent order of reaction and apparent activation energy were determined by operating the reactor differentially at a gas hourly space velocity (GHSV of 78,900 h-1 and feed concentrations between 3,500 ppm to 17,700 ppm and 3,700 to 12,400 ppm for ethyl acetate and benzene, respectively. Ethyl acetate was more reactive than benzene due to highly reactive carbonyl group in the molecule. The combustion process satisfactorily fitted pseudo first-order kinetics with respect to organic concentration and a zero-order dependence on the oxygen concentration. The presence of water vapor (9,000 ppm in the feed stream was found to weaken the reactivity of these organics which could also be demonstrated with increases in the activation energy from 23.1 kJ/mole to 37.6 kJ/mole for ethyl acetate and from 27.6 kJ/mole to 46.1 kJ/mole for benzene. Water vapor was found to play a positive role in the formation of carbon dioxide yield in ethyl acetate combustion. Deactivation of catalyst by water appeared to be only temporary and the activity reverted back to its original value once the source of water vapor was removed.

  6. Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition

    OpenAIRE

    Alpuim, P.; Chu, Virginia; Conde, João Pedro

    1999-01-01

    The effect of hydrogen dilution on the optical, transport, and structural properties of amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor deposition and radio-frequency (rf) plasma-enhanced chemical vapor deposition using substrate temperatures (T-sub) of 100 and 25 degrees C is reported. Microcrystalline silicon (mu c-Si:H) is obtained using HW with a large crystalline fraction and a crystallite size of similar to 30 nm for hydrogen dilutions above 8...

  7. Uptake rate constants and partition coefficients for vapor phase organic chemicals using semipermeable membrane devices (SPMDs)

    Science.gov (United States)

    Cranor, W.L.; Alvarez, D.A.; Huckins, J.N.; Petty, J.D.

    2009-01-01

    To fully utilize semipermeable membrane devices (SPMDs) as passive samplers in air monitoring, data are required to accurately estimate airborne concentrations of environmental contaminants. Limited uptake rate constants (kua) and no SPMD air partitioning coefficient (Ksa) existed for vapor-phase contaminants. This research was conducted to expand the existing body of kinetic data for SPMD air sampling by determining kua and Ksa for a number of airborne contaminants including the chemical classes: polycyclic aromatic hydrocarbons, organochlorine pesticides, brominated diphenyl ethers, phthalate esters, synthetic pyrethroids, and organophosphate/organosulfur pesticides. The kuas were obtained for 48 of 50 chemicals investigated and ranged from 0.03 to 3.07??m3??g-1??d-1. In cases where uptake was approaching equilibrium, Ksas were approximated. Ksa values (no units) were determined or estimated for 48 of the chemicals investigated and ranging from 3.84E+5 to 7.34E+7. This research utilized a test system (United States Patent 6,877,724 B1) which afforded the capability to generate and maintain constant concentrations of vapor-phase chemical mixtures. The test system and experimental design employed gave reproducible results during experimental runs spanning more than two years. This reproducibility was shown by obtaining mean kua values (n??=??3) of anthracene and p,p???-DDE at 0.96 and 1.57??m3??g-1??d-1 with relative standard deviations of 8.4% and 8.6% respectively.

  8. MICHIGAN SOIL VAPOR EXTRACTION REMEDIATION (MISER) MODEL: A COMPUTER PROGRAM TO MODEL SOIL VAPOR EXTRACTION AND BIOVENTING OF ORGANIC CHEMICALS IN UNSATURATED GEOLOGICAL MATERIAL

    Science.gov (United States)

    Soil vapor extraction (SVE) and bioventing (BV) are proven strategies for remediation of unsaturated zone soils. Mathematical models are powerful tools that can be used to integrate and quantify the interaction of physical, chemical, and biological processes occurring in field sc...

  9. Heterogeneous Catalytic Conversion of Biobased Chemicals into Liquid Fuels in the Aqueous Phase.

    Science.gov (United States)

    Wu, Kejing; Wu, Yulong; Chen, Yu; Chen, Hao; Wang, Jianlong; Yang, Mingde

    2016-06-22

    Different biobased chemicals are produced during the conversion of biomass into fuels through various feasible technologies (e.g., hydrolysis, hydrothermal liquefaction, and pyrolysis). The challenge of transforming these biobased chemicals with high hydrophilicity is ascribed to the high water content of the feedstock and the inevitable formation of water. Therefore, aqueous-phase processing is an interesting technology for the heterogeneous catalytic conversion of biobased chemicals. Different reactions, such as dehydration, isomerization, aldol condensation, ketonization, and hydrogenation, are applied for the conversion of sugars, furfural/hydroxymethylfurfural, acids, phenolics, and so on over heterogeneous catalysts. The activity, stability, and reusability of the heterogeneous catalysts in water are summarized, and deactivation processes and several strategies are introduced to improve the stability of heterogeneous catalysts in the aqueous phase. PMID:27158985

  10. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.

  11. The Synthesized of Carbon Nano tubes from Palm Oil by Topas Atomizer Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    This paper focused on preparation of Carbon Nano tubes (CNTs) based on palm oil as a natural resource precursor. The Topas Atomizer was utilized to vapor up the carbon gas into the reaction chamber of Chemical Vapor Deposition (CVD) to yield the CNTs in powder form at the inner wall of the Quartz tube. The purpose of this work was to investigate the effects of deposition temperature from 650 - 850 degree Celsius. The samples characteristics were analyzed by Raman spectroscopy. The results revealed that the increasing of the deposition temperature, the ID/IG ratio decreased from 650 - 850 degree Celsius. The results of Field Emission Scanning Electron Microscopy (FESEM) are also presented. (author)

  12. Aligned synthesis of multi-walled carbon nanotubes with high purity by aerosol assisted chemical vapor deposition: Effect of water vapor

    International Nuclear Information System (INIS)

    Aligned multi-walled carbon nanotubes (MWCNTs) with high purity and bulk yield were achieved on a silicon substrate by an aerosol-assisted chemical vapor deposition. The introduction of specific amounts of water vapor played a key role in in situ controlling the purity and surface defects of the nanotubes. The morphology, surface quality and structure of MWCNTs were characterized by secondary and backscattered electron imaging in a field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM). Crystallinity and defects of the MWCNTs' were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. In this work, water vapor was found to provide a weak oxidative environment, which enhanced and purified the MWCNTs' growth. However, excessive water vapor would inhibit the MWCNTs growth with a poor surface quality. In addition, it has been found that the surface morphology of the CNTs can be modified intentionally through producing some surface defects by tuning the amount of the water vapor, which may offer more nucleation sites on the chemically inert CNT surface for various applications such as catalyst support.

  13. Probing Structural and Catalytic Characteristics of Galactose Oxidase Confined in Nanoscale Chemical Environments

    DEFF Research Database (Denmark)

    Ikemoto, Hideki; Mossin, Susanne; Ulstrup, Jens;

    2014-01-01

    Galactose oxidase (GAOX) is a special metalloenzyme in terms of its active site structure and catalytic mechanisms. This work reports a study where the enzyme confined in a nanoscale chemical environment provided by mesoporous silicas (MPS) is probed. Two types of MPS, i.e. SBA-15 and MCF, were...... synthesized and used to accommodate GAOX. SBA-15-ROD is rod-shaped particles with periodically ordered nanopores (9.5 nm), while MCF has a mesocellular foam-like structure with randomly distributed pores (23 nm) interconnected by smaller windows (8.8 nm). GAOX is non-covalently confined in SBA-15- ROD, while...

  14. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  15. A geração química de vapor em espectrometria atômica Chemical vapor generation in atomic spectrometry

    Directory of Open Access Journals (Sweden)

    Iracema Takase

    2002-12-01

    Full Text Available The historical development of atomic spectrometry techniques based on chemical vapor generation by both batch and flow injection sampling formats is presented. Detection via atomic absorption spectrometry (AAS, microwave induced plasma optical emission spectrometry (MIP-OES, inductively coupled plasma optical emission spectrometry (ICP-OES , inductively coupled plasma mass spectrometry (ICP-MS and furnace atomic nonthermal excitation spectrometry (FANES are considered. Hydride generation is separately considered in contrast to other methods of generation of volatile derivatives. Hg ¾ CVAAS (cold vapor atomic absorption spectrometry is not considered here. The current state-of-the-art, including extension, advantages and limitations of this approach is discussed.

  16. Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

    NARCIS (Netherlands)

    Tiggelaar, R.M.; Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K.; Gardeniers, J.G.E.

    2013-01-01

    Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films

  17. Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene

    Science.gov (United States)

    Kim, HoKwon; Saiz, Eduardo; Chhowalla, Manish; Mattevi, Cecilia

    2013-05-01

    The development of wafer-scale continuous single-crystal graphene layers is key in view of its prospective applications. To this end, in this paper, we pave the way towards a graphene growth model in the framework of the Langmuir adsorption theory and two-dimensional crystallization. In particular, we model the nucleation and growth of graphene on copper using methane as a carbon precursor. The model leads to the identification of the range of growth parameters (temperature and gas pressures) that uniquely entails the final surface coverage of graphene. This becomes an invaluable tool to address the fundamental problems of continuity of polycrystalline graphene layers and crystalline grain dimensions. The model shows agreement with the existing experimental data in the literature. On the basis of the ‘contour map’ for graphene growth developed here and existing evidence of optimized growth of large graphene grains, new insights for engineering wafer-scale continuous graphene films are provided.

  18. Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

    Science.gov (United States)

    Gokoglu, Suleyman A.

    1988-01-01

    This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

  19. Chemical Species in the Vapor Phase of Hanford Double-Shell Tanks: Potential Impacts on Waste Tank Corrosion Processes

    Energy Technology Data Exchange (ETDEWEB)

    Felmy, Andrew R.; Qafoku, Odeta; Arey, Bruce W.; Boomer, Kayle D.

    2010-09-22

    The presence of corrosive and inhibiting chemicals on the tank walls in the vapor space, arising from the waste supernatant, dictate the type and degree of corrosion that occurs there. An understanding of how waste chemicals are transported to the walls and the affect on vapor species from changing supernatant chemistry (e.g., pH, etc.), are basic to the evaluation of risks and impacts of waste changes on vapor space corrosion (VSC). In order to address these issues the expert panel workshop on double-shell tank (DST) vapor space corrosion testing (RPP-RPT-31129) participants made several recommendations on the future data and modeling needs in the area of DST corrosion. In particular, the drying of vapor phase condensates or supernatants can form salt or other deposits at the carbon steel interface resulting in a chemical composition at the near surface substantially different from that observed directly in the condensates or the supernatants. As a result, over the past three years chemical modeling and experimental studies have been performed on DST supernatants and condensates to predict the changes in chemical composition that might occur as condensates or supernatants equilibrate with the vapor space species and dry at the carbon steel surface. The experimental studies included research on both the chemical changes that occurred as the supernatants dried as well as research on how these chemical changes impact the corrosion of tank steels. The chemical modeling and associated experimental studies were performed at the Pacific Northwest National Laboratory (PNNL) and the research on tank steel corrosion at the Savannah River National Laboratory (SRNL). This report presents a summary of the research conducted at PNNL with special emphasis on the most recent studies conducted in FY10. An overall summary of the project results as well as their broader implications for vapor space corrosion of the DST’s is given at the end of this report.

  20. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    Science.gov (United States)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  1. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  2. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  3. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  4. Chemical vapor deposition of tungsten (CVD W) as submicron interconnection and via stud

    International Nuclear Information System (INIS)

    Blanket-deposited chemical vapor deposition of tungsten (CVD W) has been developed and implemented in a 4-Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, interconnect, and interlevel via stud. The technologies have been proven reliable under several reliability stress conditions. Major technical problems involved in CVD W processing, such as adhesion, contact resistance, etchability, and hole fill are discussed. A novel technique that uses TiN as a contact and adhesion layer is presented. This technique has lead to the resolution of the above technical problem and significantly improved the manufacturability of blanket CVD W processes

  5. Growth and characterization of Bi2Se3 crystals by chemical vapor transport

    Directory of Open Access Journals (Sweden)

    W. H. Jiao

    2012-06-01

    Full Text Available Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10, and high mobility (∼8000 cm2·V−1·s−1. The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.

  6. Growth of straight carbon nanotubes by simple thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOTO; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    Straight carbon nanotubes (CNTs) were achieved by simple thermal chemical vapor deposition(STCVD) catalyzed by Mo-Fe alloy catalyst on silica supporting substrate at 700 ℃. High-resolution transmission electron microscopy images show that the straight CNTs are well graphitized with no attached amorphous carbon. Mo-Fe alloy catalyst particles play a very crucial role in the growth of straight CNTs. The straight carbon nanotubes contain much less defects than the curved nanotubes and might have potential applications for nanoelectrical devices in the future. The simple synthesis of straight CNTs may have benefit for large-scale productions.

  7. Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 -m, and the carbon nanotubes are mainly restrained within the channels of templates.

  8. Shape correction of optical surfaces using plasma chemical vaporization machining with a hemispherical tip electrode.

    Science.gov (United States)

    Takino, Hideo; Yamamura, Kazuya; Sano, Yasuhisa; Mori, Yuzo

    2012-01-20

    We propose a plasma chemical vaporization machining device with a hemispherical tip electrode for optical fabrication. Radio-frequency plasma is generated close to the electrode under atmospheric conditions, and a workpiece is scanned relative to the stationary electrode under three-axis motion control to remove target areas on a workpiece surface. Experimental results demonstrate that surface removal progresses although process gas is not forcibly supplied to the plasma. The correction of shape errors on conventionally polished spheres is performed. As a result, highly accurate smooth surfaces with the desired rms shape accuracy of 3 nm are successfully obtained, which confirms that the device is effective for the fabrication of optics.

  9. Atmospheric pressure chemical vapor deposition of CdTe—reactor design considerations

    Science.gov (United States)

    Meyers, Peter V.; Kee, Robert J.; Raja, Laxminarayan; Wolden, Colin A.; Aire, Michael

    1999-03-01

    Atmospheric Pressure Chemical Vapor Deposition (APCVD) of polycrystalline thin-film CdTe appears to offer several practical advantages over state-of-the-art manufacturing techniques. APCVD employs the same reaction chemistry utilized to produce 16% efficient CdTe cells (i.e., same reaction chemistry as Close Spaced Sublimation), avoids use of vacuum equipment, allows for physical separation of the source and substrate, and employs forced convection to ensure uniform delivery of source material over large-area substrates. Reactor design considerations and preliminary numerical simulations of mass transport are presented.

  10. Fabrication of Isotropic Pyrocarbon at 1400℃ by Thermal Gradient Chemical Vapor Deposition Apparatus

    Institute of Scientific and Technical Information of China (English)

    GUO Lingjun; ZHANG Dongsheng; LI Kezhi; LI Hejun

    2009-01-01

    An experiment was designed to prepare isotropic pyrocarbon by thermal gradient chemical vapor deposition apparatus.The deposition was performed under ambient atmosphere at 1400℃,with natural gas volume flow of 3.5 m~3/h for 80 h.The results show that the thickness and the bulk density of the deposit are about 1.95 g/cm~3 and 10 mm,respectively.The microstructure of the deposit was examined by polarized light microscopy and scanning electron microscopy,which shows that the deposit is constituted of sphere isotropic pyrocarbon,pebble pyrocarbon and laminar pyrocarbon.

  11. Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

    Science.gov (United States)

    Shen, Tian; Wu, Wei; Yu, Qingkai; Richter, Curt; Elmquist, Randolph; Newell, David; Chen, Yong

    2012-02-01

    We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm by 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO2/Si substrates, with typical carrier mobilities 4000 cm^2/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.

  12. Carbon nanosheets by microwave plasma enhanced chemical vapor deposition in CH4-Ar system

    International Nuclear Information System (INIS)

    We employ a new gas mixture of CH4-Ar to fabricate carbon nanosheets by microwave plasma enhanced chemical vapor deposition at the growth temperature of less than 500 deg. C. The catalyst-free nanosheets possess flower-like structures with a large amount of sharp edges, which consist of a few layers of graphene sheets according to the observation by transmission electron microscopy. These high-quality carbon nanosheets demonstrated a faster electron transfer between the electrolyte and the nanosheet surface, due to their edge defects and graphene structures.

  13. Synthesis and characterization of well-aligned carbon nitrogen nanotubes by microwave plasma chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Well-aligned carbon nitrogen nanotube films have been synthesized successfully on mesoporous silica substrates by microwave plasma chemical vapor deposition (MWPCVD) method. Studies on their morphology, structure, and composition by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX), respectively, indicate that these nanotubes consist of linearly polymerized carbon nitrogen nanobells, and the nitrogen atoms have been doped into carbon netweork to form a new structure C1-xNx (x=0.16±0.01). X-ray photoelectron spectroscopy (XPS) results of the samples further demonstrate that carbon bonds covalently with nitrogen in all the carbon nitrogen nanotube films.

  14. High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases,the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good,and the underlying SiGe/Si heterointerface is sharply defined.

  15. Synthesis and oxidation behavior of boron-substituted carbon powders by hot filament chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Boron-substituted carbon powder, BxC1-x with x up to 0.17, has been successfully synthesized by hot filament chemical vapor deposition. The boron concentration in prepared BxC1-x samples can be controlled by varying the relative proportions of methane and diborane. X-ray diffraction, transmission electron microscopy, and electron energy loss spectrum confirm the successful synthesis of an amorphous BC5 compound, which consists of 10―20 nm particles with disk-like morphology. Thermogravimetry measurement shows that BC5 compound starts to oxidize ap-proximately at 620℃ and has a higher oxidation resistance than carbon.

  16. LASER-INDUCED DECOMPOSITION OF METAL CARBONYLS FOR CHEMICAL VAPOR DEPOSITION OF MICROSTRUCTURES

    OpenAIRE

    Tonneau, D.; Auvert, G.; Pauleau, Y.

    1989-01-01

    Tungsten and nickel carbonyls were used to produce metal microstructures by laser-induced chemical vapor deposition (CVD) on various substrates. The deposition rate of microstructures produced by thermodecomposition of W(CO)6 on Si substrates heated with a cw Ar+ laser beam was relatively low (10 to 30 nm/s) even at high temperatures (above 900°C). Ni microstructures were deposited on quartz substrates irradiated with a CO2 laser beam. Relatively high laser powers were needed to heat the Ni s...

  17. Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature (∼80 deg. C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays

  18. Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki [School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701 (Korea, Republic of)]. E-mail: hkkim@kumoh.ac.kr

    2006-12-15

    The effect of hydrogen dilution on microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated by using transmission electron microscopy (TEM) and transmission electron diffraction (TED) analysis. It was shown that the increase of the hydrogen dilution ratio resulted in transition of microstructure of Si thin film from amorphous to polycrystalline in CECVD at low substrate temperature ({approx}80 deg. C). These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ polycrystalline Si films on glass or a flexible substrate for low-temperature poly-Si (LTPS) and flexible displays.

  19. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Science.gov (United States)

    Acharya, Narendra; Wolak, Matthäus A.; Tan, Teng; Lee, Namhoon; Lang, Andrew C.; Taheri, Mitra; Cunnane, Dan; Karasik, Boris. S.; Xi, X. X.

    2016-08-01

    In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc) and high critical current density (Jc). The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  20. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  1. MgB2 superconducting whiskers synthesized by using the hybrid physical-chemical vapor deposition.

    Science.gov (United States)

    Wang, Yazhou; Zhuang, Chenggang; Gao, Jingyun; Shan, Xudong; Zhang, Jingmin; Liao, Zhimin; Xu, Hongjun; Yu, Dapeng; Feng, Qingrong

    2009-02-25

    In this work, MgB(2) whiskers were fabricated on a copper substrate by using the hybrid physical-chemical vapor deposition, which was one of the most effective ways to make high quality pure MgB(2) films, with the possible growth mechanism discussed. The whiskers are hexagonal and conelike and grow along the [0001] direction with a single-crystal structure. The onset transition temperature is approximately 39 K, which is among the best in the published nanostructure MgB(2) papers. Fabrication of nanoscale MgB(2) whiskers provides the fundamental understanding of the effect of dimensionality and size on superconductivity.

  2. Fabrication of highly ultramicroporous carbon nanofoams by SF6-catalyzed laser-induced chemical vapor deposition

    Science.gov (United States)

    Hattori, Yoshiyuki; Shuhara, Ai; Kondo, Atsushi; Utsumi, Shigenori; Tanaka, Hideki; Ohba, Tomonori; Kanoh, Hirofumi; Takahashi, Kunimitsu; Vallejos-Burgos, Fernando; Kaneko, Katsumi

    2016-05-01

    We have developed a laser-induced chemical vapor deposition (LCVD) method for preparing nanocarbons with the aid of SF6. This method would offer advantages for the production of aggregates of nanoscale foams (nanofoams) at high rates. Pyrolysis of the as-grown nanofoams induced the high surface area (1120 m2 g-1) and significantly enhanced the adsorption of supercritical H2 (16.6 mg g-1 at 77 K and 0.1 MPa). We also showed that the pyrolized nanofoams have highly ultramicroporous structures. The pyrolized nanofoams would be superior to highly microporous nanocarbons for the adsorption of supercritical gases.

  3. Growth of 2D black phosphorus film from chemical vapor deposition

    Science.gov (United States)

    Smith, Joshua B.; Hagaman, Daniel; Ji, Hai-Feng

    2016-05-01

    Phosphorene, a novel 2D material isolated from bulk black phosphorus (BP), is an intrinsic p-type material with a variable bandgap for a variety of applications. However, these applications are limited by the inability to isolate large films of phosphorene. Here we present an in situ chemical vapor deposition type approach that demonstrates progress towards growth of large area 2D BP with average areas >3 μm2 and thicknesses representing samples around four layers and thicker samples with average areas >100 μm2. Transmission electron microscopy and Raman spectroscopy have confirmed successful growth of 2D BP from red phosphorus.

  4. Growth of 2D black phosphorus film from chemical vapor deposition.

    Science.gov (United States)

    Smith, Joshua B; Hagaman, Daniel; Ji, Hai-Feng

    2016-05-27

    Phosphorene, a novel 2D material isolated from bulk black phosphorus (BP), is an intrinsic p-type material with a variable bandgap for a variety of applications. However, these applications are limited by the inability to isolate large films of phosphorene. Here we present an in situ chemical vapor deposition type approach that demonstrates progress towards growth of large area 2D BP with average areas >3 μm(2) and thicknesses representing samples around four layers and thicker samples with average areas >100 μm(2). Transmission electron microscopy and Raman spectroscopy have confirmed successful growth of 2D BP from red phosphorus. PMID:27087456

  5. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    Science.gov (United States)

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-07-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  6. Functionalized bioinspired microstructured optical fiber pores for applications in chemical vapor sensing

    Science.gov (United States)

    Calkins, Jacob A.

    Chemical vapor sensing for defense, homeland security, environmental, and agricultural application is a challenge, which due combined requirements of ppt sensitivity, high selectivity, and rapid response, cannot be met using conventional analytical chemistry techniques. New sensing approaches and platforms are necessary in order to make progress in this rapidly evolving field. Inspired by the functionalized nanopores on moth sensilla hairs that contribute to the high selectivity and sensitivity of this biological system, a chemical vapor sensor based on the micro to nanoscale pores in microstructured optical fibers (MOFs) was designed. This MOF based chemical vapor sensor design utilizes MOF pores functionalized with organic self-assembled monolayers (SAMs) for selectivity and separations and a gold plasmonic sensor for detection and discrimination. Thin well-controlled gold films in MOF pores are critical components for the fabrication of structured plasmonic chemical vapor sensors. Thermal decomposition of dimethyl Au(II) trifluoroacetylacetonate dissolved in near-critical CO2 was used to deposit gold island films within the MOF pores. Using a 3mercatopropyltrimethoxysilane adhesion layer, continuous gold thin films as thin as 20--30 nm were deposited within MOF pores as small as 500 nm in diameter. The gold island films proved to be SERS active and were used to detect 900 ppt 2,4 DNT vapor in high pressure nitrogen and 6 ppm benzaldehyde. MOF based waveguide Raman (WGR), which can probe the air/silica interface between a waveguiding core and surrounding pores, was developed to detect and characterize SAMs and other thin films deposited in micro to nanoscale MOF pores. MOF based WGR was used to characterize an octadecyltrichlorosilane (OTS) SAM deposited in 1.6 mum diameter pores iv to demonstrate that the SAM was well-formed, uniform along the pore length, and only a single layer. MOF based WGR was used to detect a human serum albumin monolayer deposited on the

  7. The chemical and catalytic properties of nanocrystalline metal oxides prepared through modified sol-gel synthesis

    Science.gov (United States)

    Carnes, Corrie Leigh

    The goal of this research was to synthesize, characterize and study the chemical properties of nanocrystalline metal oxides. Nanocrystalline (NC) ZnO, CuO, NiO, Al2O3, and the binary Al2O 3/MgO and ZnO/CuO were prepared through modified sol gel methods. These NC metal oxides were studied in comparison to the commercial (CM) metal oxides. The samples were characterized by XRD, TGA, FTIR, BET, and TEM. The NC samples were all accompanied by a significant increase in surface area and decrease in crystallite size. Several chemical reactions were studied to compare the NC samples to the CM samples. One of the reactions involved a high temperature reaction between carbon tetrachloride and the oxide to form carbon dioxide and the corresponding metal chloride. A similar high temperature reaction was conducted between the metal oxide and hydrogen sulfide to form water and the corresponding metal sulfide. A room temperature gas phase adsorption was studied where SO2 was adsorbed onto the oxide. A liquid phase adsorption conducted at room temperature was the destructive adsorption of paraoxon (a toxic insecticide). In all reactions the NC samples exhibited greater activity, destroying or adsorbing a larger amount of the toxins compared to the CM samples. To better study surface area effects catalytic reactions were also studied. The catalysis of methanol was studied over the nanocrystalline ZnO, CuO, NiO, and ZnO/CuO samples in comparison to their commercial counterparts. In most cases the NC samples proved to be more active catalysts, having higher percent conversions and turnover numbers. A second catalytic reaction was also studied, this reaction was investigated to look at the support effects. The catalysis of cyclopropane to propane was studied over Pt and Co catalysts. These catalysts were supported onto NC and CM alumina by impregnation. By observing differences in the catalytic behavior, support effects have become apparent.

  8. HRI catalytic two-stage liquefaction (CTSL) process materials: chemical analysis and biological testing

    Energy Technology Data Exchange (ETDEWEB)

    Wright, C.W.; Later, D.W.

    1985-12-01

    This report presents data from the chemical analysis and biological testing of coal liquefaction materials obtained from the Hydrocarbon Research, Incorporated (HRI) catalytic two-stage liquefaction (CTSL) process. Materials from both an experimental run and a 25-day demonstration run were analyzed. Chemical methods of analysis included adsorption column chromatography, high-resolution gas chromatography, gas chromatography/mass spectrometry, low-voltage probe-inlet mass spectrometry, and proton nuclear magnetic resonance spectroscopy. The biological activity was evaluated using the standard microbial mutagenicity assay and an initiation/promotion assay for mouse-skin tumorigenicity. Where applicable, the results obtained from the analyses of the CTSL materials have been compared to those obtained from the integrated and nonintegrated two-stage coal liquefaction processes. 18 refs., 26 figs., 22 tabs.

  9. Chemical sensing of copper phthalocyanine sol-gel glass through organic vapors

    Energy Technology Data Exchange (ETDEWEB)

    Ridhi, R.; Gawri, Isha; Abbas, Saeed J.; Saini, G. S. S.; Tripathi, S. K. [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (INDIA) Fax: +91-172-2783336; Tel.:+91-172-2544362 (India)

    2015-05-15

    The sensitivities of metallophthalocyanine to vapor phase electron donors has gained significance in many areas and disciplines due to their sensing properties and ease of operation. In the present study the interaction mechanism of organic vapors in Copper Phthalocyanine (CuPc) sol-gel glass has been studied. The interaction mechanism is affected by many factors like morphology, electrical or optical properties of film. CuPc sol-gel glass has been synthesized using chemical route sol-gel method. Its structural characterization was conducted using XRD and the amorphous nature of the silicate glass was observed with characteristic α polymorph phase of CuPc at around 6.64° with 13.30Å interplanar spacing. The size of the particle as determined using Debbye Scherre’s formula comes out around 15.5 nm. The presence of α phase of CuPc was confirmed using FTIR with the appearance of crystal parameter marker band at 787 cm-1. Apart from this A2u and Eu symmetry bands of CuPc have also been observed. The UV absorption spectrum of CuPc exhibits absorption peaks owing to π→ π* and n→ π* transitions. A blue shift in the prepared CuPc glass has been observed as compared to the dopant CuPc salt indicating increase of band gap. A split in B (Soret) band and Q band appears as observed with the help of Lorentzian fitting. CuPc sol gel glass has been exposed with chemical vapors of Methanol, Benzene and Bromine individually and the electrical measurements have been carried out. These measurements show the variation in conductivity and the interaction mechanism has been analyzed.

  10. Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD)

    Science.gov (United States)

    Jafari, A.; Ghoranneviss, M.; Salar Elahi, A.

    2016-03-01

    Large-area boron doped graphene was synthesized on Cu foil (as a catalyst) by Hot Filament Chemical Vapor Deposition (HFCVD) using boron oxide powder and ethanol vapor. To investigate the effect of different boron percentages, grow time and the growth mechanism of boron-doped graphene, scanning electron microscopy (SEM), Raman scattering and X-ray photoelectron spectroscopy (XPS) were applied. Also in this experiment, the I-V characteristic carried out for study of electrical property of graphene with keithley 2361 system. Nucleation of graphene domains with an average domain size of ~20 μm was observed when the growth time is 9 min that has full covered on the Cu surface. The Raman spectroscopy show that the frequency of the 2D band down-shifts with B doping, consistent with the increase of the in-plane lattice constant, and a weakening of the B-C in-plane bond strength relative to that of C-C bond. Also the shifts of the G-band frequencies can be interpreted in terms of the size of the C-C ring and the changes in the electronic structure of graphene in the presence of boron atoms. The study of electrical property shows that by increasing the grow time the conductance increases which this result in agree with SEM images and graphene grain boundary. Also by increasing the boron percentage in gas mixer the conductance decreases since doping graphene with boron creates a band-gap in graphene band structure. The XPS results of B doped graphene confirm the existence of boron in doped graphene, which indicates the boron atoms doped in the graphene lattice are mainly in the form of BC3. The results showed that boron-doped graphene can be successfully synthesized using boron oxide powder and ethanol vapor via a HFCVD method and also chemical boron doping can be change the electrical conductivity of the graphene.

  11. The power source effect on SiOx coating deposition by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 oC and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  12. Metastable phase formation during chemical vapor deposition of niobium-germanium films

    International Nuclear Information System (INIS)

    Regularities of different metastable phase formation during chemical vapor deposition of niobium-germanium coatings were investigated. These coatings were deposited on wire and band metal substrates by method of chemical transport reactions with the use of iodine as transporting agent. It was shown that it was possible to deposite the metastable Nb5Ge3 phase with structure of T2 type and X phase with cubic structure and hypothetical Nb2Ge composition during iodide process using Nb3Ge alloy as initial material together with phases existing at state diagram. Metastable T2 and X phases are formed only at high total pressure (more 250-500 Pa) and deposition rate less 1 μm/min. Coatings on the base of Nb3Ge with germanium content from 11 to 23 at.% were obtained

  13. Densification mechanism of chemical vapor infiltration technology for carbon/carbon composites

    Institute of Scientific and Technical Information of China (English)

    CHEN Jian-xun; XIONG Xiang; HUANG Qi-zhong; YI Mao-zhong; HUANG Bai-yun

    2007-01-01

    Carbon/carbon composites were fabricated using pressure-gradient chemical vapor infiltration(CVI) technology with propane (C3H6) as the carbon precursor gas and nitrogen (N2) as the carrier gas. The chemical process of deposition of pyrolytic carbon was deduced by analyzing the component of molecules in gas phase and observing the microstructure of deposition carbon. The results show that the process of deposition starts from the breakdown of C-C single bond of propene (C3H6), and forms two kinds of active groups in the heterogeneous gas phase reaction. Afterwards, these active groups form many stable bigger molecules and deposit on carbon fiber surface. At the same time, hydrogen atoms of the bigger molecules absorbed on carbon fiber surface are eliminated and the solid pyrolytic carbon matrix is formed in the heterogeneous reaction process.

  14. Chemical vapor deposition of ZrC within a spouted bed by bromide process

    Science.gov (United States)

    Ogawa, T.; Ikawa, K.; Iwamoto, K.

    1981-03-01

    ZrC coatings by chemical vapor deposition were applied to particles of ThO 2, UO 2 and Al 2O 3 at 1623-1873 K. The feed gas mixture consisted of ZrBr 4, CH 4, H 2 and Ar. The results were compared with the calculated chemical equilibria in the Zr-C-H-Br system. It was shown that the weight and composition of the deposit can be calculated by thermochemical analysis after correcting the methane flow rate for a pyrolysis efficiency. Predominant reaction presumably occurring were derived by a mass balance consideration on the calculated equilibrium species. A simplified model of the ZrC deposition was proposed.

  15. Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Taejin; Jung, Hanearl; Lee, Chang Wan [Nanodevice Laboratory, School of Electrical and Electronics Engineering, Yonsei University, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of); Mun, Ki-Yeung; Kim, Soo-Hyun [Nano-Devices and Process Laboratory, School of Materials Science and Engineering, Yeungnam University, Dae-Dong, Gyeongsan-Si 712-749 (Korea, Republic of); Park, Jusang [Nanodevice Laboratory, School of Electrical and Electronics Engineering, Yonsei University, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [Nanodevice Laboratory, School of Electrical and Electronics Engineering, Yonsei University, Seodaemun-Gu, Seoul 120-749 (Korea, Republic of)

    2015-07-15

    Highlights: • Carbon tetrabromide (CBr{sub 4}) precursor and Cu foil can be used for chemical vapor deposition (CVD) of graphene. • High yield and controllable growth are possible via CVD used with a CBr{sub 4} precursor. • CBr{sub 4} precursor is a new alternative for use in the mass production of graphene. • Low bond dissociation energy of CBr{sub 4} allows lower temperature growth (800 °C) of high-quality graphene film, compared to that (1000 °C) of methane used CVD. - Abstract: A carbon tetrabromide (CBr{sub 4}) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO{sub 2}/Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr{sub 4} precursor. Thus, CBr{sub 4} precursor is a new alternative candidate for use in the mass production of graphene.

  16. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

    Science.gov (United States)

    Zeng, Qing; Chen, Zhaolong; Zhao, Yun; Wei, Tongbo; Chen, Xiang; Zhang, Yun; Yuan, Guodong; Li, Jinmin

    2016-08-01

    High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and (10\\bar{1}2) reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.

  17. Polymer Thin Films and Surface Modification by Chemical Vapor Deposition: Recent Progress.

    Science.gov (United States)

    Chen, Nan; Kim, Do Han; Kovacik, Peter; Sojoudi, Hossein; Wang, Minghui; Gleason, Karen K

    2016-06-01

    Chemical vapor deposition (CVD) polymerization uses vapor phase monomeric reactants to synthesize organic thin films directly on substrates. These thin films are desirable as conformal surface engineering materials and functional layers. The facile tunability of the films and their surface properties allow successful integration of CVD thin films into prototypes for applications in surface modification, device fabrication, and protective films. CVD polymers also bridge microfabrication technology with chemical and biological systems. Robust coatings can be achieved via CVD methods as antifouling, anti-icing, and antihydrate surfaces, as well as stimuli-responsive or biocompatible polymers and novel nanostructures. Use of low-energy input, modest vacuum, and room-temperature substrates renders CVD polymerization compatible with thermally sensitive substrates and devices. Compared with solution-based methods, CVD is particularly useful for insoluble materials, such as electrically conductive polymers and controllably crosslinked networks, and has the potential to reduce environmental, health, and safety impacts associated with solvents. This review discusses the relevant background and selected applications of recent advances by two methods that display and use the high retention of the organic functional groups from their respective monomers, initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. PMID:27276550

  18. A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    GUO Xiao-Song; BAO Zhong; ZHANG Shan-Shan; XIE Er-Qing

    2011-01-01

    @@ Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600°C to 1650°C was observed.This phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this phenomenon.According to this model, the phase transition is due to a distinct difference in the probability distribution of the H radicals, which seems to be dependent upon Tfil.%Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition. A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600℃ to 1650℃ was observed. This phenomenon may result from the associated abundance of H radicals participating in the growth of the films. A probability distribution model of the H radical is proposed to elucidate this phenomenon. According to this model, the phase transition is due to a distinct difference in the probability distribution of the H radicals, which seems to be dependent upon Tfil.

  19. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Harris; Kass, Richard; Gan, K. K.

    2014-01-23

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  20. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    International Nuclear Information System (INIS)

    Thin films of Pt-doped CeO2 were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt0 and Pt2+ mixture with the Pt2+ to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt2+ to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt2+ was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt2+/Pt ratio

  1. Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

    International Nuclear Information System (INIS)

    Highlights: • Carbon tetrabromide (CBr4) precursor and Cu foil can be used for chemical vapor deposition (CVD) of graphene. • High yield and controllable growth are possible via CVD used with a CBr4 precursor. • CBr4 precursor is a new alternative for use in the mass production of graphene. • Low bond dissociation energy of CBr4 allows lower temperature growth (800 °C) of high-quality graphene film, compared to that (1000 °C) of methane used CVD. - Abstract: A carbon tetrabromide (CBr4) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO2/Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr4 precursor. Thus, CBr4 precursor is a new alternative candidate for use in the mass production of graphene

  2. Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zanfoni, N.; Avril, L.; Imhoff, L.; Domenichini, B., E-mail: bruno.domenichini@u-bourgogne.fr; Bourgeois, S.

    2015-08-31

    Thin films of Pt-doped CeO{sub 2} were grown by direct liquid injection chemical vapor deposition on silicon wafer covered by native oxide at 400 °C using Ce(IV) alkoxide and organoplatinum(IV) as precursors. X-ray photoelectron spectra evidenced that the platinum oxidation state is linked to the deposition way. For platinum deposited on top of cerium oxide thin films previously grown, metallic platinum particles were obtained. Cerium and platinum codeposition allowed obtaining a Pt{sup 0} and Pt{sup 2+} mixture with the Pt{sup 2+} to Pt ratio strongly dependent on the platinum flow rate during the deposition. Indeed, the lower the platinum precursor flow rate is, the higher the Pt{sup 2+} to Pt ratio is. Moreover, surface and cross-sectional morphologies obtained by scanning electron microscopy evidenced porous layers in any case. - Highlights: • Pt-doped ceria were synthesized. • Films were obtained by direct liquid injection chemical vapor deposition. • Simultaneous deposition of Pt and Ce was used to obtain homogeneous films. • Pt{sup 2+} was revealed through X-ray photoelectron spectroscopy. • Different routes were used to exalt Pt{sup 2+}/Pt ratio.

  3. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects

  4. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Science.gov (United States)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  5. Chemical vapor deposition. 1975-1978 (citations from the NTIS Data Base). Report for 1975-78

    Energy Technology Data Exchange (ETDEWEB)

    Cavagnaro, D.M.

    1980-07-01

    This bibliography discusses chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses. Applications of this process include coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered. (This updated bibliography contains 246 citations, none of which are new entries to the previous edition.)

  6. Chemical vapor deposition. 1979-June 1980 (citations from the NTIS Data Base). Report for 1979-June 1980

    Energy Technology Data Exchange (ETDEWEB)

    Cavagnaro, D.M.

    1980-07-01

    Research on chemical vapor deposition of carbon, carbides, ceramics, metals, and glasses are cited. Applications of this process include optical coatings, semiconducting films, laser materials, solar cells, composite fabrication, and nuclear reactor material fabrication. The physical, mechanical, and chemical properties of these coatings are covered. (This updated bibliography contains 64 citations, 50 of which are new entries to the previous edition.)

  7. Investigating the potential for energy, fuel, materials and chemicals production from corn residues (cobs and stalks) by non-catalytic and catalytic pyrolysis in two reactor configurations

    Energy Technology Data Exchange (ETDEWEB)

    Ioannidou, O.; Zabaniotou, A. [Chemical Engineering Department, Aristotle University of Thessaloniki, Thessaloniki (Greece); Antonakou, E.V.; Papazisi, K.M.; Lappas, A.A. [Chemical Process Engineering Research Institute (CPERI) (Greece); Athanassiou, C. [Department of Engineering and Management of Energy Resources, University of Western Macedonia (Greece)

    2009-05-15

    The results of thermogravimetric analysis (TGA), non-catalytic and catalytic pyrolysis of corn cobs and corn stalks are reported in this paper. Pyrolysis took place in two different reactor configurations for both feedstocks: (1) fast pyrolysis in a captive sample reactor; and (2) non-catalytic slow pyrolysis and catalytic pyrolysis in a fixed-bed reactor. Experiments were carried out in atmospheric pressure at three temperatures: low temperature (360-380 C), medium temperature (500-600 C) and at high temperature (600-700 C). The results of the experimental study were compared with data reported in the literature. Investigating the potential of corn residues for energy, fuel, materials and chemicals production according to their thermochemical treatment products yields and quality, it can be stated that: (a) corn stalks could be suitable raw material for energy production via gasification at high temperature, due to their medium low heating value (LHV) of pyrolysis gas (13-15 MJ/m{sup 3}); (b) corn cob could be a good solid biofuel, due to the high LHV (24-26 MJ/kg) of the produced char; (c) additionally, corn cobs could be a good material for activated carbon production after being activated or gasified with steam, due to its high fixed carbon content({proportional_to}74 wt%); (d) liquid was the major pyrolysis product from catalytic pyrolysis (about 40-44 wt% on biomass) for both feedstocks; further analysis of the organic phase of the liquid products were hydrocarbons and phenols, which make them interesting for chemicals production. (author)

  8. A geração química de vapor em espectrometria atômica Chemical vapor generation in atomic spectrometry

    OpenAIRE

    Iracema Takase; Hugo Borges Pereira; Aderval S. Luna; Patrícia Grinberg; Reinaldo Calixto de Campos

    2002-01-01

    The historical development of atomic spectrometry techniques based on chemical vapor generation by both batch and flow injection sampling formats is presented. Detection via atomic absorption spectrometry (AAS), microwave induced plasma optical emission spectrometry (MIP-OES), inductively coupled plasma optical emission spectrometry (ICP-OES) , inductively coupled plasma mass spectrometry (ICP-MS) and furnace atomic nonthermal excitation spectrometry (FANES) are considered. Hydride generation...

  9. Controlled synthesis of TiO2 mesoporous microspheres via chemical vapor deposition

    International Nuclear Information System (INIS)

    Graphical abstract: Highlights: → Anatase titanium dioxide (TiO2) mesoporous microspheres with core-shell and hollow structure were successfully prepared on a large scale by a simple template-free chemical vapor deposition method. → The as-synthesized products are high uniformity, and the porosity could be well controlled by optimizing the reaction conditions. → The possible growth mechanism of the multi core-shell and hollow nanostructures has been discussed. - Abstract: Anatase titanium dioxide (TiO2) mesoporous microspheres with core-shell and hollow structure were successfully prepared on a large scale by a one-step template-free chemical vapor deposition method. The effects of various reaction conditions on the morphology, composition and structure of the products were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET) technique and photoluminescence (PL) method. The results indicate that the product near the source was composed of core-shell structure TiO2 microspheres with diameters from 3 to 5 μm. With increasing the distance between the source materials and the substrate, the hollow TiO2 spheres with 1-2 μm dominant the products. A localized Ostwald ripening can be use to explain the formation of core-shell and hollow structures, and the size of the initial TiO2 solid nanoparticles plays an important role in determining the evacuation manner of the solid in the ripening-induced hollowing process. The surface area of TiO2 hollow microspheres determined by the adsorption isotherms was measured to be 74.67 m2/g. X-ray photoelectron spectroscopy (XPS) analysis revealed that the O-H peaks of hollow structures have a chemical shift compared with the core-shell structures. The optical property of the products was also discussed.

  10. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    International Nuclear Information System (INIS)

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research

  11. Growth and characterization of bismuth selenide thin films by chemical vapor deposition

    Science.gov (United States)

    Brom, Joseph E.

    Topological insulators are a recently discovered class of materials that have garnered much interest due to their unique surface states. With its relatively high band gap (0.3eV) and nearly ideal band structure, Bi2Se 3 has been a primary material of interest in the study of topological insulating behavior. However, several factors have made this study difficult. Bi2Se3 typically has a high native selenium vacancy concentration, and selenium vacancies act as donors in the material, leading to a high bulk electron concentration. The surface of Bi2Se 3 has also been shown to be susceptible to environmental doping when exposed to ambient air. Combining these two factors means that Bi2Se 3 is usually highly n-type doped, making it difficult to study the surface conducting states by transport measurements. This study investigated the use of two different chemical vapor deposition (CVD) techniques for the growth of Bi2Se3 thin films on sapphire (001): hybrid physicalchemical vapor deposition (HPCVD) and metal-organic chemical vapor deposition (MOCVD). HPCVD is a process which combines the evaporation of elemental selenium with the thermal decomposition of trimethylbismuth (TMBi). The use of elemental selenium immediately around the substrate provides a high overpressure of selenium, allowing for reduction of the selenium vacancy concentration. Bi2Se3 films grown on sapphire were epitaxial and highly oriented parallel to the substrate giving rise to narrow X-ray rocking curves (full-width-at-half-maximum=160 arcsecs for (006) reflection) and 6-fold rotational symmetry as determined by phi scans. The structural properties were consistent with deposition via a van der Waals epitaxy process. The selenium to bismuth ratio (VI/V) ratio proved important for achieving a reduced electron concentration of TMBi) dimethylselenide (DMSe) as precursors. Epitaxial Bi 2Se3 films were also produced by MOCVD on sapphire, however, the electron concentrations were generally higher (1- 3x

  12. Highly Chemical and Regio-selective Catalytic Oxidation with a Novel Manganese Catalyst

    Institute of Scientific and Technical Information of China (English)

    刘斌; 陈怡; 余成志; 沈征武

    2003-01-01

    The chemical selectivity of a novel active manganese compound [Mn2IVμ-O)3(TMTACN)2] (PF6)2 (1) in catalytic oxidation reactions depended on the structure of substrates and 1 was able to catalyze the oxidation of toluene into benzaldehyde and/or benzoic acid under very mild conditions. The following results were obtained: (1) The selectivity of the oxidation depended on the electronic density of double bonds. Reactivity was absent when strong electron-witherawing groups were conjugated with double bonds. (2) Allylic oxidation reactions mostly take place when double bond is present inside a ring system, whilst epoxiclarion reactions occur when the alkene moiety is part of linear chain. (3) In ring systems, the methylene group was more likely to be oxidized than the methyl group on ailylic position. As expected, the C--H bonds at the bridgeheads were unreactive.The secondary hydroxyl groups are more easily to be oxidized than the primary hydroxyl groups.

  13. Thin film cadmium telluride solar cells by two chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chu, T.L.

    1988-01-15

    Cadmium telluride (CdTe) has long been recognized as a promising thin film photovoltaic material. In this work, polycrystalline p-CdTe films have been deposited by two chemical vapor deposition techniques, namely the combination of vapors of elements (CVE) and close-spaced sublimation (CSS). The CVE technique is more flexible in controlling the composition of deposited films while the CSS technique can provide very high deposition rates. The resistivity of p-CdTe films deposited by the CVE and CSS techniques can be controlled by intrinsic (cadmium vacancies) or extrinsic (arsenic or antimony) doping, and the lowest resistivity obtainable is about 200 ..cap omega.. cm. Both front-wall (CdTe/TCS/glass) and back-wall (TCS/CdTe/substrate) cells have been prepared. The back-wall cells are less efficient because of the high and irreproducible p-CdTe-substrate interface resistance. The CSS technique is superior to the CVE technique because of its simplicity and high deposition rates; however, the cleaning of the substrate in situ is more difficult. The interface cleanliness is an important factor determining the electrical and photovoltaic characteristics of the heterojunction. Heterojunction CdS/CdTe solar cells of area 1 cm/sup 2/ with conversion efficiencies higher than 10% have been prepared and junction properties characterized.

  14. Growth of titanium silicate thin films by photo-induced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Z.M.; Fang, Q.; Zhang, J.-Y.; Wu, J.X.; Di, Y.; Chen, W.; Chen, M.L.; Boyd, Ian W

    2004-04-01

    Titanium silicate thin films have been grown on Si substrates by photo-induced chemical vapor deposition using 222-nm ultraviolet excimer lamps. Titanium tetraisopropoxide (TTIP) and tetraethoxysilane (TEOS) were used as precursors. TTIP and TEOS were dissolved together in cyclohexane and introduced into the photochemical reaction chamber through a droplet injector vaporizer. The composition of the film was controlled by changing the ratio of TTIP to TEOS in the precursor solution. High quality titanium silicate films with various Ti/Si ratios and low carbon content have been achieved as revealed by X-ray photoelectron spectroscopy measurements. The atomic percentage of Ti content in the grown silicate films is significantly larger than that in the precursor solution. The films were measured to be 30-80 nm in thickness and 1.91-2.31 in refractive index by ellipsometry. Both the growth rate and refractive index increase with increasing Ti percentage in the silicate films. The evolution of Fourier transform infrared spectra of the silicate films with solution composition shows that the Ti-O-Si absorption at approximately 920 cm{sup -1} becomes stronger, while the Ti-O absorption at approximately 430 cm{sup -1} becomes weaker with decreasing Ti percentage in the solution. A small feature at {approx}1035 cm{sup -1} related to Si-O-Si bonds is also observed in the SiO{sub 2}-rich Ti silicate film.

  15. Synthesis of SiC nanostructures through chemical vapor growth route

    Energy Technology Data Exchange (ETDEWEB)

    Chiew, Y.L. [Energy Efficiency and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, University Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang (Malaysia); Cheong, K.Y.

    2012-05-15

    In this study, SiC nanorods and nanocolumns were synthesized using a catalyst-free method with activated carbon powder and oxidized silicon wafer (oxidation time of the wafer varied from 1 to 12 min to produce different SiO{sub 2} thickness) as source materials. SiC nanorods were mostly found at the center of silicon wafer that was exposed to activated carbon powder while SiC nanocolumns were mostly found at the side of the wafer where it was in direct contact with graphite crucible. When thicker SiO{sub 2} was used, SiC nanorods at the center tended to agglomerate together into particles. SiC nanocolumns at the side of the wafer were also increased in amount as the oxidation time increased. Growth of SiC nanorods and nanocolumns could be attributed to chemical vapor growth via vapor-solid mechanism. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki [Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701 (Korea, Republic of)]. E-mail: hkkim@kumoh.ac.kr; Kim, Sang-Woo [Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk, 730-701 (Korea, Republic of); Kim, Do-Geun [Surface Technology Research Center, Korea Institute of Machinery and Materials, 66 Sangnam-dong, Changwon-si, Gyeongnam, 641-831 (Korea, Republic of); Kang, Jae-Wook [Organic Light Emitting Diodes (OLED) Center, Seoul National University, Silim-dong, Seoul 151-741 (Korea, Republic of); Kim, Myung Soo [Core Technology Laboratory, Samsung SDI, Co., LTD., 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do, 442-391 (Korea, Republic of); Cho, Woon Jo [Nano Device Research Center, Korea Institute of Science and Technology, 39-1, Haweolgok-Dong, Seongbuk-Gu, Seoul, 136-791 (Korea, Republic of)

    2007-04-09

    The characteristics of an SiN {sub x} passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of {approx} 10{sup 11} electrons/cm{sup 3} formed by nine straight antennas connected in parallel, a high-density SiN {sub x} passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 deg. C. Even at a low substrate temperature, single SiN {sub x} passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 x 10{sup -2} g/m{sup 2}/day and a transparency of {approx} 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiN {sub x} layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiN {sub x} deposition process.

  17. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  18. Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2010-11-26

    The chemistry, microstructure, and catalytic activity of thin films incorporating palladium were studied using scanning and transmission electron microscopies, X-ray diffraction, spectrophotometry, 4-point probe and catalytic tests. The films were synthesized using pulsed filtered cathodic arc and magnetron sputter deposition, i.e. techniques far from thermodynamic equilibrium. Catalytic particles were formed by thermally cycling thin films of the Pd-Pt-O system. The evolution and phase formation in such films as a function of temperature were discussed in terms of the stability of PdO and PtO2 in air. The catalytic efficiency was found to be strongly affected by the chemical composition, with oxidized palladium definitely playing a major role in the combustion of methane. Reactive sputter deposition of thin films in the Pd-Zr-Y-O system allowed us forming microstructures ranging from nanocrystalline zirconia to palladium nanoparticles embedded in a (Zr,Y)4Pd2O matrix. The sequence of phase formation is put in relation to simple thermodynamic considerations.

  19. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Science.gov (United States)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-01

    We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 1012 cm-2) together with quite low carrier mobility (∼1350 cm2/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  20. Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

    Science.gov (United States)

    Arnold, Heather N.; Sangwan, Vinod K.; Schmucker, Scott W.; Cress, Cory D.; Luck, Kyle A.; Friedman, Adam L.; Robinson, Jeremy T.; Marks, Tobin J.; Hersam, Mark C.

    2016-02-01

    Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8 μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

  1. Synthesis and Growth Mechanism of Carbon Filaments by Chemical Vapor Deposition without Catalyst

    Institute of Scientific and Technical Information of China (English)

    Shuhe Liu; Feng Li; Shuo Bai

    2009-01-01

    Carbon filaments with diameter from several to hundreds micrometers were synthesized by chemical vapor deposition of methane without catalyst. The morphology, microstructure and mechanical properties of the carbon filament were investigated by scanning electronic microscopy, optical microscopy, X-ray diffraction and mechanical testing. The results show that the carbon filament is inverted cone shape and grows up along the gas flow direction. The stem of it is formed of annular carbon layers arranged in a tree ring structure while the head is made up of concentrical layers. The tensile strength of the carbon filament is increased after graphitization for the restructuring and growing large of graphene. The growth mechanism of carbon filament was proposed according to the results of two series of experiments with different deposition time and intermittent deposition cycles.

  2. Fabrication of Rare Earth-Doped Transparent Glass Ceramic Optical Fibers by Modified Chemical Vapor Deposition

    CERN Document Server

    Blanc, Wilfried; Nguyen, Luan; Bhaktha, S N B; Sebbah, Patrick; Pal, Bishnu P; Dussardier, Bernard

    2011-01-01

    Rare earth (RE) doped silica-based optical fibers with transparent glass ceramic (TGC) core was fabricated through the well-known modified chemical vapor deposition (MCVD) process without going through the commonly used stage of post-ceramming. The main characteristics of the RE-doped oxyde nanoparticles namely, their density and mean diameter in the fibers are dictated by the concentration of alkaline earth element used as phase separating agent. Magnesium and erbium co-doped fibers were fabricated. Optical transmission in term of loss due to scattering as well as some spectroscopic characteristics of the erbium ions was studied. For low Mg content, nano-scale particles could be grown with and relatively low scattering losses were obtained, whereas large Mg-content causes the growth of larger particles resulting in much higher loss. However in the latter case, certain interesting alteration of the spectroscopic properties of the erbium ions were observed. These initial studies should be useful in incorporati...

  3. Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    刘学璋; 罗浩; 苏栩; 余志明

    2015-01-01

    A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition (HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope (FE-SEM) with energy dispersive X-ray detector (EDX). Results show that the nucleation density is found to be up to 1010 cm−2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.

  4. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhiying; Zhang, Yanhui; Zhang, Haoran; Sui, Yanping; Zhang, Yaqian; Ge, Xiaoming; Yu, Guanghui, E-mail: ghyu@mail.sim.ac.cn; Xie, Xiaoming; Li, Xiaoliang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Jin, Zhi; Liu, Xinyu [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2015-03-02

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N{sub 2}H{sub 4}·H{sub 2}O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N{sub 2}H{sub 4}·H{sub 2}O concentration. The result revealed that N{sub 2}H{sub 4}·H{sub 2}O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N{sub 2}H{sub 4} on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

  5. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    International Nuclear Information System (INIS)

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N2H4·H2O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N2H4·H2O concentration. The result revealed that N2H4·H2O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N2H4 on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold

  6. Microstructure of carbon fiber preform and distribution of pyrolytic carbon by chemical vapor infiltration

    Institute of Scientific and Technical Information of China (English)

    陈建勋; 黄伯云

    2004-01-01

    The carbon/carbon composites were made by chemical vapor infiltration(CVI) with needled felt preform. The distribution of the pyrolytic carbon in the carbon fiber preform was studied by polarized light microscope(PLM) and scanning electronic microscope(SEM). The experimental results indicate that the amount of pyrolytic carbon deposited on the surface of chopped carbon fiber is more than that on the surface of long carbon fiber. The reason is the different porosity between the layer of chopped carbon fiber and long carbon fiber. The carbon precursor gas which passes through the part of chopped carbon fibers decomposes and deposits on the surface of chopped carbon fiber. The pyrolytic carbon on the surface of long carbon fibers is produced by the carbon precursor gas diffusing from the chopped fiber and the Z-d fiber. Uniform pore distribution and porosity in preform are necessary for producing C/C composites with high properties.

  7. Chemical vapor infiltration of TiB{sub 2} fibrous composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This program is designed to develop a Hall-Heroult aluminum smelting cathode with substantially improved properties. The carbon cathodes in current use require significant anode-to-cathode spacing in order to prevent shorting, causing significant electrical inefficiencies. This is due to the non-wettability of carbon by aluminum which causes instability in the cathodic aluminum pad. It is suggested that a fiber reinforced-TiB{sub 2} matrix composite would have the requisite wettability, strength, strain-to-failure, cost, and lifetime to solve this problem. The approach selected to fabricate such a cathode material is chemical vapor infiltration (CVI). This process produces high purity matrix TiB{sub 2} without damaging the relatively fragile fibers. The program is designed to evaluate potential fiber reinforcements, fabricate test specimens, and scale the process to provide demonstration components.

  8. Tribological properties of diamond films grown by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Uniform and continuous diamond films have been deposited on Si, Mo, and many other substrates by plasma-enhanced chemical vapor deposition. We have developed processes to enhance the adhesion of diamond films to metal substrates for tribological applications. The tribological properties of the diamond films are found to be significantly different depending on their morphology, grain size, and roughness. However, under all cases tested using a ring-on-block tribotester, it is found that for diamond films with a small grain size of 1--3 μm, the coefficient of friction of the diamond films sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

  9. Tribological behavior of improved chemically vapor-deposited boron on beryllium

    International Nuclear Information System (INIS)

    Earlier chemical vapor deposition (CVD) experiments with diborane as the boron source gave well-bonded boron films up to 10 μm thick on beryllium, with layered intermetallic compounds below a top layer of boron. The films were nonuniform in thickness and cracked badly when given diffusion heat treatments to produce desired intermetallic compounds. By rotating the beryllium samples during the CVD, films of uniform thickness have now been produced. A variety of compounds of beryllium and boron have been produced on the outer surface of the CVD film by varying the concentration of diborane in the CVD gas. Wear and friction tests performed on various CVD surfaces using sapphire and diamond pins showed remarkable differences in that the CVD boron surface appeared to be substantially more compatible with diamond than with sapphire. The results of these tests are discussed. (Auth.)

  10. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    Energy Technology Data Exchange (ETDEWEB)

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Zhou Lei [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Mushtaq, Fajer [Department of Mechanical Engineering, ETH Zurich, Zurich 8092 (Switzerland); Ouyang Defang [School of Life and Health Science, Aston University, Birmingham B4 7ET (United Kingdom); James, David; Roberts, Darren [Thermo Fisher Scientific, Stafford House, Hemel Hempstead HP2 7GE (United Kingdom)

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  11. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  12. Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)

    Institute of Scientific and Technical Information of China (English)

    MA Yu-tian; GONG Zhu-Qing; XU Wei-Hong; HUANG Jian

    2006-01-01

    Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission,UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111-133 nm have high IR transmission across the full 8-13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices.

  13. Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K., E-mail: JulienKouadio.Dangbegnon@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Talla, K.; Roro, K.T.; Botha, J.R. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-01

    Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

  14. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  15. Fabrication of micro carbon pillar by laser-induced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    周健; 罗迎社; 李立君; 钟琦文; 李新华; 殷水平

    2008-01-01

    Argon ion laser was used as the induced light source and ethane(C2H4) was selected as the precursor gas,in the variety ranges of laser power from 0.5 W to 4.5 W and the pressure of the precursor gas from 225×133.3 Pa to 680×133.3 Pa,the experiments of laser induced chemical vapor deposition were proceeded for fabrication of micro carbon pillar.In the experiments,the influences of power of laser and pressure of work gas on the diameter and length of micro carbon pillar were investigated,the variety on averaged growth rate of carbon pillar with the laser irradiation time and moving speed of focus was discussed.Based on experiment data,the micro carbon pillar with an aspect ratio of over 500 was built through the method of moving the focus.

  16. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

    2014-11-03

    Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.

  17. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    International Nuclear Information System (INIS)

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction kinetics were studied and detailed process modeling based on a reaction mechanism that includes the formation of an alkylzinc alkoxide intermediate product is discussed. This mechanism can explain the temperature dependent variety in deposition profiles observed in the static deposition experiments. The capability of modeling to gain insight in the local process conditions inside a reactor is demonstrated. - Highlights: • ZnO deposition at high rates of 800 nm/min • Modeling based on two step mechanism gives good fit. • Modeling gives insight in the inside of the reactor. • Modeling can even predict static deposition profiles

  18. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm−1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm

  19. Thin films of barium fluoride scintillator deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    We have used metal-organic chemical vapor deposition (MOCVD) technology to coat optical substrates with thin (≅ 1-10 μm thick) films of inorganic BaF2 scintillator. Scanning electron microscope (SEM) photographs indicate that high-quality epitaxial crystalline film growth was achieved, with surface defects typically smaller than optical wavelengths. The scintillation light created by the deposition of ionizing radiation in the scintillating films was measured with a photomultiplier and shown to be similar to bulk melt-grown crystals. The results demonstrate the potential of these composite optical materials for planar and fiber scintillation radiation detectors in high energy and nuclear physics, synchrotron radiation research, and in radiation and X-ray imaging and monitoring. (orig.)

  20. Characterization of nanocarbon deposited on insulator substrate by alcohol chemical vapor deposition

    Science.gov (United States)

    Tsujimoto, Marina; Murata, Hidenobu; Tachibana, Masaru

    2016-10-01

    Single-layer-graphene-like nanocarbon materials were directly deposited on c-plane sapphire substrates by thermal chemical vapor deposition with ethanol as a carbon source. Scanning electron microscopy (SEM) images show that the deposited materials have sheetlike grains of around 100 nm diameter. Most of them have “hills” with 32 nm diameter on the grains. According to atomic force microscopy (AFM) observation, the height of the sheetlike grains is below 1 nm, which is comparable to that of single-layer graphene, while the hills have a height of several nm. Raman spectra show that the material is similar to graphitic nanocarbon, which has a strong D band. This result implies that there are a number of defects in the nanocarbon materials.

  1. MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    MA ZHI-XUN; LIAO XIAN-BO; KONG GUANG-LIN; CHU JUN-HAO

    2000-01-01

    The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx :H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

  2. Carbon nanotubes for supercapacitors: Consideration of cost and chemical vapor deposition techniques

    Institute of Scientific and Technical Information of China (English)

    Chao Zheng; Weizhong Qian; Chaojie Cui; Guanghui Xu; Mengqiang Zhao; Guili Tian; Fei Wei

    2012-01-01

    In this topic,we first discussed the requirement and performance of supercapacitors using carbon nanotubes (CNTs) as the electrode,including specific surface area,purity and cost.Then we reviewed the preparation technique of single walled CNTs (SWNTs) in relatively large scale by chemical vapor deposition method.Its catalysis on the decomposition of methane and other carbon source,the reactor type and the process control strategies were discussed.Special focus was concentrated on how to increase the yield,selectivity,and purity of SWNTs and how to inhibit the formation of impurities,including amorphous carbon,multiwalled CNTs and the carbon encapsulated metal particles,since these impurities seriously influenced the performance of SWNTs in supercapacitors.Wish it be helpful to further decrease its product cost and for the commercial use in supercapacitors.

  3. Fabrication of copper (Ⅰ) nitride nanorods within SBA-15 by metal organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Copper (Ⅰ) nitride nanorods grown in channels of mesoporous silica SBA-15 by chemical vapor deposition method has been synthesized. The morphology and microstructure of the resulting product were characterized by XRD patters, TEM images, EDS analysis and Raman spectra. The XRD and TEM revealed that the Cu3N phase was confined in channels of SBA-15 forming continuous nanowires with 6 nm around and hundreds of nanometers in length. Raman spectra of the final product and pure Cu3N showed peaks shift due to the quantum confinement effect of the nanowires. This preparation methodology only requires a mild working condition and is capable of template synthesis of other binary nitride nanostructures with controlled morphology inside the channels of mesoporous materials.

  4. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

    2011-06-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

  5. Synthesis and characterization of well-aligned carbon nitrogen nanotubes by microwave plasma chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    马旭村; 徐贵昌; 王恩哥

    2000-01-01

    Well-aligned carbon nitrogen nanotube films have been synthesized successfully on meso-porous silica substrates by microwave plasma chemical vapor deposition (MWPCVD) method. Studies on their morphology, structure, and composition by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX), respectively, indicate that these nanotubes consist of linearly polymerized carbon nitrogen nanobells, and the nitrogen atoms have been doped into carbon netweork to form a new structure C1-xNx( x = 0.16±0.01). X-ray photoelectron spectroscopy (XPS) results of the samples further demonstrate that carbon bonds cova-lently with nitrogen in all the carbon nitrogen nanotube films.

  6. Vertical graphene nanosheets synthesized by thermal chemical vapor deposition and the field emission properties

    Science.gov (United States)

    Guo, Xin; Qin, Shengchun; Bai, Shuai; Yue, Hongwei; Li, Yali; Chen, Qiang; Li, Junshuai; He, Deyan

    2016-09-01

    In this paper, we explored synthesis of vertical graphene nanosheets (VGNs) by thermal chemical vapor deposition (CVD). Through optimizing the experimental condition, growth of well aligned VGNs with uniform morphologies on nickel-coated stainless steel (SS) was realized for the first time by thermal CVD. In the meantime, influence of growth parameters on the VGN morphology was understood based on the balancing between the concentration and kinetic energy of carbon-containing radicals. Structural characterizations demonstrate that the achieved VGNs are normally composed of several graphene layers and less corrugated compared to the ones synthesized by other approaches, e.g. plasma enhanced (PE) CVD. The field emission measurement indicates that the VGNs exhibit relatively stable field emission and a field enhancement factor of about 1470, which is comparable to the values of VGNs prepared by PECVD can be achieved.

  7. Growth of GaN micro/nanolaser arrays by chemical vapor deposition

    Science.gov (United States)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ˜1 μm and a length of ˜15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm-2. The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  8. Development of polishing methods for Chemical Vapor Deposited Silicon Carbide mirrors for synchrotron radiation

    International Nuclear Information System (INIS)

    Material properties of Chemical Vapor Deposited Silicon Carbide (CVD SiC) make it ideal for use in mirrors for synchrotron radiation experiments. We developed methods to grind and polish flat samples of CVD SiC down to measured surface roughness values as low as 1.1 Angstroms rms. We describe the processing details, including observations we made during trial runs with alternative processing recipes. We conclude that pitch polishing using progressively finer diamond abrasive, augmented with specific water based lubricants and additives, produces superior results. Using methods based on these results, a cylindrical and a toroidal mirror, each about 100 x 300mm, were respectively finished by Continental Optical and Frank Cooke, Incorporated. WYCO Interferometry shows these mirrors have surface roughness less than 5.7 Angstroms rms. These mirrors have been installed on the LLNL/UC X-ray Calibration and Standards Facility at the Stanford Synthrotron Radiation Laboratory

  9. Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

    International Nuclear Information System (INIS)

    Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

  10. Fabrication of copper (Ⅰ) nitride nanorods within SBA-15 by metal organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; Frank Leung-Yuk Lam; YAN ZiFeng; HU XiJun

    2009-01-01

    Copper (Ⅰ) nitride nanorods grown in channels of mesoporous silica SBA-15 by chemical vapor depo- sition method has been synthesized. The morphology and microstructure of the resulting product were characterized by XRD patters, TEM images, EDS analysis and Raman spectra. The XRD and TEM re-vealed that the Cu3N phase was confined in channels of SBA-15 forming continuous nanowires with 6 nm around and hundreds of nanometers in length. Raman spectra of the final product and pure Cu3N showed peaks shift due to the quantum confinement effect of the nanowires. This preparation meth-odology only requires a mild working condition and is capable of template synthesis of other binary nitride nanostructures with controlled morphology inside the channels of mesoporous materials.

  11. A model for the growth of cdte by metal organic chemical vapor deposition

    Science.gov (United States)

    Nemirovsky, Y.; Goren, D.; Ruzin, A.

    1991-10-01

    A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe over a wide temperature range is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 380° C. The major features of the model are the observed two-step surface-controlled pyrolysis and surface saturation, leading initially to a growth rate that increases with the square root of the concentrations of the reacting species and subsequently to a decrease of the growth rate as the concentrations increase. At even higher concentrations, an additional increase of growth rate is observed and modeled.

  12. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

    2013-12-16

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  13. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    Science.gov (United States)

    Chen, Zhiying; Zhang, Yanhui; Zhang, Haoran; Sui, Yanping; Zhang, Yaqian; Ge, Xiaoming; Yu, Guanghui; Xie, Xiaoming; Li, Xiaoliang; Jin, Zhi; Liu, Xinyu

    2015-03-01

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N2H4.H2O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N2H4.H2O concentration. The result revealed that N2H4.H2O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N2H4 on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

  14. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    International Nuclear Information System (INIS)

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO2 of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO2 are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO2 substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 1011 cm−2. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups

  15. In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

    2013-01-21

    Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene’s semiconducting properties is considered to be the key of its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (Polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.

  16. High-strength chemical-vapor-deposited graphene and grain boundaries.

    Science.gov (United States)

    Lee, Gwan-Hyoung; Cooper, Ryan C; An, Sung Joo; Lee, Sunwoo; van der Zande, Arend; Petrone, Nicholas; Hammerberg, Alexandra G; Lee, Changgu; Crawford, Bryan; Oliver, Warren; Kysar, Jeffrey W; Hone, James

    2013-05-31

    Pristine graphene is the strongest material ever measured. However, large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain grain boundaries that can potentially weaken the material. We combined structural characterization by means of transmission electron microscopy with nanoindentation in order to study the mechanical properties of CVD-graphene films with different grain sizes. We show that the elastic stiffness of CVD-graphene is identical to that of pristine graphene if postprocessing steps avoid damage or rippling. Its strength is only slightly reduced despite the existence of grain boundaries. Indentation tests directly on grain boundaries confirm that they are almost as strong as pristine. Graphene films consisting entirely of well-stitched grain boundaries can retain ultrahigh strength, which is critical for a large variety of applications, such as flexible electronics and strengthening components. PMID:23723231

  17. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    Science.gov (United States)

    Wang, Shengnan; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki

    2013-12-01

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO2 of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO2 are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO2 substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 1011 cm-2. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  18. In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

    2013-01-21

    Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene's semiconducting properties is considered to be key to its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into the graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties. PMID:23203220

  19. Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth

    Science.gov (United States)

    Eichfeld, Sarah M.; Oliveros Colon, Víctor; Nie, Yifan; Cho, Kyeongjae; Robinson, Joshua A.

    2016-06-01

    Tungsten diselenide (WSe2) is a semiconducting, two-dimensional (2D) material that has gained interest in the device community recently due to its electronic properties. The synthesis of atomically thin WSe2, however, is still in its infancy. In this work we elucidate the requirements for large selenium/tungsten precursor ratios and explain the effect of nucleation temperature on the synthesis of WSe2 via metal-organic chemical vapor deposition (MOCVD). The introduction of a nucleation-step prior to growth demonstrates that increasing nucleation temperature leads to a transition from a Volmer-Weber to Frank-van der Merwe growth mode. Additionally, the nucleation step prior to growth leads to an improvement of WSe2 layer coverage on the substrate. Finally, we note that the development of this two-step technique may allow for improved control and quality of 2D layers grown via CVD and MOCVD processes.

  20. Thermal expansion of laminated, woven, continuous ceramic fiber/chemical-vapor-infiltrated silicon carbide matrix composites

    Science.gov (United States)

    Eckel, Andrew J.; Bradt, Richard C.

    1990-01-01

    Thermal expansions of three two-dimensional laminate, continuous fiber/chemical-vapor-infiltrated silicon carbide matrix composites reinforced with either FP-Alumina (alumina), Nextel (mullite), or Nicalon (Si-C-O-N) fibers are reported. Experimental thermal expansion coefficients parallel to a primary fiber orientation were comparable to values calculated by the conventional rule-of-mixtures formula, except for the alumina fiber composite. Hysteresis effects were also observed during repeated thermal cycling of that composite. Those features were attributed to reoccurring fiber/matrix separation related to the micromechanical stresses generated during temperature changes and caused by the large thermal expansion mismatch between the alumina fibers and the silicon carbide matrix.

  1. Time Dependent DD Neutrons Measurement Using a Single Crystal Chemical Vapor Deposition Diamond Detector on EAST

    Science.gov (United States)

    Du, Tengfei; Peng, Xingyu; Chen, Zhongjing; Hu, Zhimeng; Ge, Lijian; Hu, Liqun; Zhong, Guoqiang; Pu, Neng; Chen, Jinxiang; Fan, Tieshuan

    2016-09-01

    A single crystal chemical vapor deposition (scCVD) diamond detector has been successfully employed for neutron measurements in the EAST (Experimental Advanced Superconducting Tokamak) plasmas. The scCVD diamond detector coated with a 5 μm 6LiF (95% 6Li enriched) layer was placed inside a polyethylene moderator to enhance the detection efficiency. The time-dependent neutron emission from deuteron plasmas during neutral beam injection (NBI) heating was obtained. The measured results are compared with that of fission chamber detectors, which always act as standard neutron flux monitors. The scCVD diamond detector exhibits good reliability, stability and the capability to withstand harsh radiation environments despite its low detection efficiency due to the small active volume. supported by the National Magnetic Confinement Fusion Science Program of China (Nos. 2013GB106004 and 2012GB101003) and National Natural Science Foundation of China (No. 91226102)

  2. Formation of high T/sub c/ superconducting films by organometallic chemical vapor deposition

    International Nuclear Information System (INIS)

    The first growth of superconducting YBaCuO films by organometallic chemical vapor deposition is described. Metal β-diketonates were decomposed thermally on MgO substrates in an oxygen-rich atmosphere to produce amorphous brown films. Subsequent annealing in oxygen yielded dull gray films whose thickness corresponded to deposition rates of approximately 8 nm min-1. These films showed semiconductor-like behavior at higher temperatures, followed by a broad resistive transition from 80 to 36 K with the resistance becoming zero at ∼20 K. Analysis of x-ray data indicated the presence of the orthorhombic superconducting phase and various other metal oxides. Profilometer measurements yielded film thicknesses up to 950 nm, and scanning electron microscopy revealed faceted grains from 0.5 to 1.0 μm in size

  3. Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Purwins, Hendrik; Barak, Bernd; Nagi, Ahmed;

    2014-01-01

    average Silicon Nitride cap layer thickness for the Plasma Enhanced Chemical Vapor Deposition (PECVD) dual-layer metal passivation stack process. Process and production equipment Fault Detection and Classification (FDC) data are used as predictor variables. Various variable sets are compared: one most...... algorithm, and Support Vector Regression (SVR). On a test set, SVR outperforms the other methods by a large margin, being more robust towards changes in the production conditions. The method performs better on high-dimensional multivariate input data than on the most predictive variables alone. Process...... expert knowledge used for a priori variable selection further enhances the performance slightly. The results confirm earlier findings that Virtual Metrology can benefit from the robustness of SVR, an adaptive generic method that performs well even if no process knowledge is applied. However...

  4. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  5. Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition

    CERN Document Server

    Kang, S Y; Lee, S K; Hwang, C S; Kim, H J

    2000-01-01

    Ru thin films were deposited at 300 approx 400 .deg. C by using Ru(C sub 5 H sub 4 C sub 2 H sub 5) sub 2 (Ru(EtCp) sub 2) as a precursor and low-pressure metalorganic chemical vapor deposition. The addition of O sub 2 gas was essential to form Ru thin films. The deposition rates of the films were about 200 A/min. For low oxygen addition and high substrate temperature, RuO sub 2 phases were formed. Also, thermodynamic calculations showed that all the supplied oxygen was consumed to oxidize carbon and hydrogen, cracked from the precursor ligand, rather than Ru. Thus, metal films could be obtained There was an optimum oxygen to precursor ratio at which the pure Ru phase could be obtained with minimum generation of carbon and RuO sub 2

  6. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    Science.gov (United States)

    Li, Jiangling; Su, Shi; Zhou, Lei; Kundrát, Vojtěch; Abbot, Andrew M.; Mushtaq, Fajer; Ouyang, Defang; James, David; Roberts, Darren; Ye, Haitao

    2013-01-01

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  7. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

    Directory of Open Access Journals (Sweden)

    W. J. Liu

    2016-01-01

    Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

  8. Technical Challenges and Progress in Fluidized Bed Chemical Vapor Deposition of Polysilicon

    Institute of Scientific and Technical Information of China (English)

    李建隆; 陈光辉; 张攀; 王伟文; 段继海

    2011-01-01

    Various methods for production of polysilicon have been proposed for lowering the production cost andenergy consumption, and enhancing productivity, which are critical for industrial applications. The fluidized bed chemical vapor deposition (FBCVD) method is a most promising alternative to conventional ones, but the homogeneous reaction of silane in FBCVD results in unwanted formation of fines, which will affect the product qualityand output. There are some other problems, such as heating degeneration due to undesired polysilicon deposition on the walls of the reactor and the heater. This article mainly reviews the technological development on FBCVD of polycrystalline silicon and the research status for solving the above problems. It also identifies a number of challenges to tackle and principles should be followed in the design ofa FBCVD reactor.

  9. Growth of well-oriented VACNTs using thermal chemical vapor deposition method

    Science.gov (United States)

    Yousefi, Amin Termeh; Mahmood, Mohamad Rusop; Ikeda, Shoichiro

    2016-07-01

    The remarkable properties of carbon nanotubes (CNTs) make them attractive for biosensor applications, especially for medical detecting devices. In this paper, we describe a process to grow high oriented ratio CNT arrays to improve the electrical properties of the devices based on CNTs. Chemical vapor deposition (CVD) was used to grow highly oriented CNT using camphor as the carbon source, and argon and hydrogen as carrier gases to grow perpendicular CNTs on the surface of the silicon substrate in presence of ferrocene as a metallic catalyst. Images were revealed by FESEM indicates that the formation mechanism of oriented CNTs with high morphological purity nanotubes, which is depends significantly on deposition time and applied temperature to the furnaces. This method might be an effective method to produce oriented MWCNT in different length.

  10. Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Shuang-Bao

    2000-01-01

    Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 1014 ~ 5 × 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.

  11. Uniformity of large-area bilayer graphene grown by chemical vapor deposition

    Science.gov (United States)

    Sheng, Yuewen; Rong, Youmin; He, Zhengyu; Fan, Ye; Warner, Jamie H.

    2015-10-01

    Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.

  12. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

    Science.gov (United States)

    Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  13. Mechanical properties of chemical vapor deposited coatings for fusion reactor application

    International Nuclear Information System (INIS)

    Chemical vapor deposited coatings of TiB2, TiC and boron on graphite substrates are being developed for application as limiter materials in magnetic confinement fusion reactors. In this application severe thermal shock conditions exist and to do effective thermo-mechanical modelling of the material response it is necessary to acquire elastic moduli, fracture strength and strain to fracture data for the coatings. Four point flexure tests have been conducted from room temperature to 20000C on TiB2 and boron coated graphite with coatings in tension and compression and the mechanical properties extracted from the load-deflection data. In addition, stress relaxation tests from 500 to 11500C were performed on TiB2 and TiC coated graphite beams to assess the low levels of plastic deformation which occur in these coatings. Significant differences have been observed between the effective mechanical properties of the coatings and literature values of the bulk properties

  14. Spiral growth of few-layer MoS2 by chemical vapor deposition

    Science.gov (United States)

    Dong, X.; Yan, C.; Tomer, D.; Li, C. H.; Li, L.

    2016-08-01

    Growth spirals exhibit appealing properties due to a preferred layer stacking and lack of inversion symmetry. Here, we report spiral growth of MoS2 during chemical vapor deposition on SiO2/Si and epitaxial graphene/SiC substrates, and their physical and electronic properties. We determine the layer-dependence of the MoS2 bandgap, ranging from 2.4 eV for the monolayer to a constant of 1.3 eV beyond the fifth layer. We further observe that spirals predominantly initiate at the step edges of the SiC substrate, based on which we propose a growth mechanism driven by screw dislocation created by the coalescence of two growth fronts at steps.

  15. Carbon impurities on graphene synthesized by chemical vapor deposition on platinum

    Energy Technology Data Exchange (ETDEWEB)

    Ping, Jinglei; Fuhrer, Michael S., E-mail: michael.fuhrer@monash.edu [Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA and School of Physics, Monash University, 3800 Victoria (Australia)

    2014-07-28

    We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition on platinum. For certain growth conditions, we observe micron-size island-like impurity layers which can be mistaken for second graphene layers in optical microscopy or scanning electron microscopy. The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction, indicating growth of carbon at the platinum surface below graphene. Dark-field transmission electron microscopy indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystalline carbon impurities with a spatially inhomogeneous distribution. The impurity concentration can be reduced significantly by lowering the growth temperature. Raman spectra show a large D peak, however, electrical characterization shows high mobility (∼8000 cm{sup 2}/Vs), indicating a limitation for Raman spectroscopy in characterizing the electronic quality of graphene.

  16. Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

    DEFF Research Database (Denmark)

    Sun, Jie; Lindvall, Niclas; Cole, Matthew T.;

    2012-01-01

    Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...... size similar to 10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent......, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp(2) hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene...

  17. Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ying; Frank Leung-Yuk Lam; HU Xijun; YAN Zifeng

    2006-01-01

    Copper nanorods have been synthesized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD)employing copper (Ⅱ) acetylacetonate, Cu(acac)2,and hydrogen as a precursor and reactant gas, respectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties.In addition, it has been found that chemically modifying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external surface are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vacuum (2 kPa) which is extremely milder than the conventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

  18. Computational Study of Fluid Flow in a Rotational Chemical Vapor Deposition (CVD) Reactor

    Science.gov (United States)

    Wong, Sun; Jaluria, Yogesh

    2015-11-01

    In a typical Chemical Vapor Deposition (CVD) reactor, the flow of the reacting gases is one of the most important considerations that must be precisely controlled in order to obtain desired film quality. In general, the fluids enter the reactor chamber, travel over to the heated substrate area, where chemical reactions lead to deposition, and then exit the chamber. However, the flow inside the reactor chamber is not that simple. It would often develop recirculation at various locations inside the reactor due to reactor geometry, flow conditions, buoyancy effects from temperature differences and rotational effects cause by the rotating substrate. This recirculation causes hot spots and affects the overall performance of the reactor. A recirculation fluid packet experiences a longer residence time inside the reactor and, thus, it heats up to higher temperatures causing unwanted chemical reactions and decomposition. It decreases the grow rate and uniformity on the substrate. A mathematical and computational model has been developed to help identify these unwanted hot spots occurring inside the CVD reactor. The model can help identify the user parameters needed to reduce the recirculation effects and better control the flow. Flow rates, pressures, rotational speeds and temperatures can all affect the severity of the recirculation within the reactor. The model can also help assist future designs as the geometry plays a big role in controlling fluid flow. The model and the results obtained are discussed in detail.

  19. Development of a new laser heating system for thin film growth by chemical vapor deposition.

    Science.gov (United States)

    Fujimoto, Eiji; Sumiya, Masatomo; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Takeguchi, Masaki; Koinuma, Hideomi; Matsumoto, Yuji

    2012-09-01

    We have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating. Three types of heat absorbers, (10 × 10 × 2 mm(3)) consisting of SiC, Ni/NiO(x), or pyrolytic graphite covered with pyrolytic BN (PG/PBN), located at the backside of the substrate, were tested for heating performance. It was confirmed that the substrate temperature could reach higher than 1500 °C in vacuum when a PG/PBN absorber was used. A wide-range temperature response between 400 °C and 1000 °C was achieved at high heating and cooling rates. Although the thermal energy loss increased in a H(2) gas ambient due to the higher thermal conductivity, temperatures up to 1000 °C were achieved even in 200 Torr H(2). We have demonstrated the capabilities of this laser heating system by growing ZnO films by metalorganic chemical vapor deposition. The growth mode of ZnO films was changed from columnar to lateral growth by repeated temperature modulation in this laser heating system, and consequently atomically smooth epitaxial ZnO films were successfully grown on an a-plane sapphire substrate.

  20. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  1. Synthesis and enhanced hydrogen desorption kinetics of magnesium hydride using hydriding chemical vapor synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin-Ho [Icheon Branch, Korea Institute of Ceramic Engineering and Technology (KICET), Icheon-si, Gyeonggi-do (Korea, Republic of); Kim, Byung-Goan [Korea Energy Materials Co.Ltd., 409, Daegu Technopark, 1-11, Hosan-Dong, Dalse-Gu 704-230 (Korea, Republic of); Kang, Yong-Mook, E-mail: dake@kaist.ac.kr [Department of Chemistry, Dongguk University-Seoul, 100715 Seoul (Korea, Republic of)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer We synthesized pure MgH{sub 2} by a hydriding chemical vapor synthesis process in a hydrogen atmosphere. Black-Right-Pointing-Pointer The particle size HCVS-MgH{sub 2} was drastically reduced to the sub-micron or micrometer-scale. Black-Right-Pointing-Pointer HCVS-MgH{sub 2} showed different shapes (needle-like nanofibers and angulated plate) depending on the deposited position. Black-Right-Pointing-Pointer HCVS-MgH{sub 2} desorbed hydrogen up to about 7.2 wt% and 7.1 wt%. - Abstract: This paper describes the hydriding chemical vapor synthesis (HCVS) of the hydrogen storage alloy MgH{sub 2} in a hydrogen atmosphere and the product's hydrogenation properties. Mg powder was used as a starting material to produce submicron MgH{sub 2} and uniformly heated to a temperature of 600 Degree-Sign C for Mg vaporization. The effects of deposited positions in HCVS reactor on the morphology and the composition of the obtained products were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM), and Brunauer-Emmett-Teller (BET) analyses. It is clearly seen that after the HCVS process, the particle size of synthesized MgH{sub 2} was drastically reduced to the sub-micron or micrometer-scale and these showed different shapes (needle-like nanofibers and angulated plate) depending on the deposited position. The hydrogen desorption temperatures of HCVS-MgH{sub 2} were measured using a differential scanning calorimeter (DSC). It was found that after the HCVS process, the desorption temperature of HCVS-MgH{sub 2} decreased from 430 to 385 Degree-Sign C and, simultaneously, the smallest particle size and the highest specific surface area were obtained. These observations indicate that the minimum hydrogen desorption temperature of HCVS-MgH{sub 2} powder with needle-like form can be obtained, and that this temperature is dependent on the particle size and the specific surface area of the products. The thermogravimetric

  2. Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel

    Science.gov (United States)

    Friedman, Adam L.; Perkins, F. Keith; Hanbicki, Aubrey T.; Culbertson, James C.; Campbell, Paul M.

    2016-06-01

    Ultra-thin transition metal dichalcogenides (TMDs) films show remarkable potential for use in chemical vapor sensing devices. Electronic devices fabricated from TMD films are inexpensive, inherently flexible, low-power, amenable to industrial-scale processing because of emergent growth techniques, and have shown high sensitivity and selectivity to electron donor analyte molecules important for explosives and nerve gas detection. However, for devices reported to date, the conductance response to chemical vapors is dominated by Schottky contacts, to the detriment of the sensitivity, selectivity, recovery, and obscuring their intrinsic behavior. Here, we use contact engineering to transition the contacts in a MoS2 FET-based chemical vapor sensor to the 1T conducting phase, while leaving the channel in the 2H semiconducting state, and thus providing Ohmic contacts to the film. We demonstrate that the resultant sensors have much improved electrical characteristics, are more selective, and recover fully after chemical vapor exposure--all major enhancements to previously MoS2 sensor devices. We identify labile nitrogen-containing electron donors as the primary species that generate a response in MoS2, and we study the dynamics of the sensing reactions, identifying two possible qualitative models for the chemical sensing reaction.

  3. Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Ong, B. S.; Pey, K. L.; Ong, C. Y.; Tan, C. S.; Antoniadis, D. A.; Fitzgerald, E. A.

    2011-05-01

    We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2 metal gate process for In0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3 shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

  4. Surface chemical modification of zeolites and their catalytic performance for naphthalene alkylation

    Institute of Scientific and Technical Information of China (English)

    张铭金; 郑安民; 邓风; 岳勇; 叶朝辉

    2003-01-01

    Zeolitesβ, Y and mordenite are modified with organic and inorganic cupric salts using a liquid phase deposit method, and their catalytic performance and the dispersion states of copper on the zeolites are characterized by using naphthalene isopropylation reaction and 129Xe NMR, respectively. The experimental results indicate that naphthalene conversion on the catalysts decreases in the order of HY>Hβ>HMCM-22>HM. The performance of the zeolites has been largely improved after the modification. Naphthalene conversion rate reaches 97% and 60%, andβ,β′-selectivity 66% and 70% for CuHY and CuH?, respectively. Metal surfactants, such as hexanoic and octanoic copper, play a positive role in modifying the external surface and pore structure of zeolitesβ and Y. 129Xe NMR results demonstrate that the two types of the pore channels in CuHβ are unimpeded for xenon atoms, and there is a fast chemical exchange between two xenon atoms located in different adsorption sites; Cu2+ ion is a strong adsorption site for xenon atoms and it is a strong active center as well; Cu2+ and Cu+ ions coexist in channels of zeolites, which are in agreement with the conclusions from ab initio quantum chemical calculations.

  5. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  6. Superior Mobility in Chemical Vapor Deposition Synthesized Graphene by Grain Size Engineering

    Science.gov (United States)

    Petrone, Nicholas; Dean, Cory; Meric, Inanc; van der Zande, Arend; Huang, Pinshane; Wang, Lei; Muller, David; Shepard, Kenneth; Hone, James

    2012-02-01

    Chemical vapor deposition (CVD) offers a promising method to produce large-area films of graphene, crucial for commercial realization of graphene-based applications. However, electron transport in CVD grown graphene has continued to fall short of the performance demonstrated by graphene derived from mechanical exfoliation. Lattice defects and grain boundaries developed during growth, structural defects and chemical contamination introduced during transfer, and charged scatterers present in sub-optimal dielectric substrates have all been identified as sources of disorder in CVD grown graphene devices. We grow CVD graphene and fabricate field-effect transistors, attempting to minimize potential sources of disorder. We reduce density of grain boundaries in CVD graphene by controlling domain sizes up to 250 microns. By transferring CVD graphene onto h-BN utilizing a dry-transfer method, we minimize trapped charges at the interface between graphene and in the underlying substrate. We report field-effect mobilities up to 110,000 cm2V-1s-1 and oscillations in magnetotransport measurements below 1 T, confirming the high quality and low disorder in our CVD graphene devices.

  7. Chemical vapor deposition-derived graphene with electrical performance of exfoliated graphene.

    Science.gov (United States)

    Petrone, Nicholas; Dean, Cory R; Meric, Inanc; van der Zande, Arend M; Huang, Pinshane Y; Wang, Lei; Muller, David; Shepard, Kenneth L; Hone, James

    2012-06-13

    While chemical vapor deposition (CVD) promises a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior electronic properties in comparison with exfoliated samples. Here we test the electrical transport properties of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing-induced contamination, are substantially reduced. We grow CVD graphene with grain sizes up to 250 μm to abate grain boundaries, and we transfer graphene utilizing a novel, dry-transfer method to minimize chemical contamination. We fabricate devices on both silicon dioxide and hexagonal boron nitride (h-BN) dielectrics to probe the effects of substrate-induced disorder. On both substrate types, the large-grain CVD graphene samples are comparable in quality to the best reported exfoliated samples, as determined by low-temperature electrical transport and magnetotransport measurements. Small-grain samples exhibit much greater variation in quality and inferior performance by multiple measures, even in samples exhibiting high field-effect mobility. These results confirm the possibility of achieving high-performance graphene devices based on a scalable synthesis process. PMID:22582828

  8. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  9. Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.

    Science.gov (United States)

    Jang, Byung Chul; Seong, Hyejeong; Kim, Sung Kyu; Kim, Jong Yun; Koo, Beom Jun; Choi, Junhwan; Yang, Sang Yoon; Im, Sung Gap; Choi, Sung-Yool

    2016-05-25

    Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 10(7), stable retention time for 10(5) s, excellent cycling endurance over 10(5) cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices. PMID:27142537

  10. Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

    KAUST Repository

    Chang, Yung-Huang

    2014-08-26

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.

  11. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  12. Superhydrophobicity of polyvinylidene fluoride membrane fabricated by chemical vapor deposition from solution

    International Nuclear Information System (INIS)

    Due to the chemical stability and flexibility, polyvinylidene fluoride (PVDF) membranes are widely used as the topcoat of architectural membrane structures, roof materials of vehicle, tent fabrics, and so on. Further modified PVDF membrane with superhydrophobic property may be even superior as the coating layer surface. The lotus flower is always considered to be a sacred plant, which can protect itself against water, dirt, and dust. The superhydrophobic surface of lotus leaf is rough, showing the micro- and nanometer scale morphology. In this work, the microreliefs of lotus leaf were mimicked using PVDF membrane and the nanometer scale peaks on the top of the microreliefs were obtained by the method of chemical vapor deposition from solution. The surface morphology of PVDF membrane was investigated by scanning electronic microscopy (SEM) and atomic force microscope (AFM). Elemental composition analysis by X-ray photoelectron spectroscopy (XPS) revealed that the material of the nanostructure of PVDF membrane was polymethylsiloxane. On the lotus-leaf-like PVDF membrane, the water contact angle and sliding angle were 155 deg. and 4 deg., respectively, exhibiting superhydrophobic property.

  13. Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

    Science.gov (United States)

    Miyoshi, Kazuhisa

    2000-01-01

    The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

  14. Functional metal oxide coatings by molecule-based thermal and plasma chemical vapor deposition techniques.

    Science.gov (United States)

    Mathur, S; Ruegamer, T; Donia, N; Shen, H

    2008-05-01

    Deposition of thin films through vaccum processes plays an important role in industrial processing of decorative and functional coatings. Many metal oxides have been prepared as thin films using different techniques, however obtaining compositionally uniform phases with a control over grain size and distribution remains an enduring challenge. The difficulties are largely related to complex compositions of functional oxide materials, which makes a control over kinetics of nucleation and growth processes rather difficult to control thus resulting in non-uniform material and inhomogeneous grain size distribution. Application of tailor-made molecular precursors in low pressure or plasma-enhanced chemical vapor deposition (CVD) techniques offers a viable solution for overcoming thermodynamic impediments involved in thin film growth. In this paper molecule-based CVD of functional coatings is demonstrated for iron oxide (Fe2O3, Fe3O4), vanadium oxide (V2O5, VO2) and hafnium oxide (HfO2) phases followed by the characterization of their microstructural, compositional and functional properties which support the advantages of chemical design in simplifying deposition processes and optimizing functional behavior. PMID:18572690

  15. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  16. Gas temperature measurements inside a hot wall chemical vapor synthesis reactor.

    Science.gov (United States)

    Notthoff, Christian; Schilling, Carolin; Winterer, Markus

    2012-11-01

    One key but complex parameter in the chemical vapor synthesis (CVS) of nanoparticles is the time temperature profile of the gas phase, which determines particle characteristics such as size (distribution), morphology, microstructure, crystal, and local structure. Relevant for the CVS process and for the corresponding particle characteristics is, however, not the T(t)-profile generated by an external energy source such as a hot wall or microwave reactor but the temperature of the gas carrying reactants and products (particles). Due to a complex feedback of the thermodynamic and chemical processes in the reaction volume with the external energy source, it is very difficult to predict the real gas phase temperature field from the externally applied T(t)-profile. Therefore, a measurement technique capable to determine the temperature distribution of the gas phase under process conditions is needed. In this contribution, we demonstrate with three proof of principle experiments the use of laser induced fluorescence thermometry to investigate the CVS process under realistic conditions.

  17. Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

    NARCIS (Netherlands)

    Popadic, M.; Scholtes, T.L.M.; De Boer, W.; Sarubbi, F.; Nanver, L.K.

    2009-01-01

    An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation

  18. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Crystalline silicon surface passivation by amorphous silicon deposited by three different chemical vapor deposition (CVD) techniques at low (T ∼ 130 °C) temperatures is compared. For all three techniques, surface recombination velocities (SRVs) are reduced by two orders of magnitude after prolonged

  19. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  20. Nonradioactive Environmental Emissions Chemical Source Term for the Double Shell Tank (DST) Vapor Space During Waste Retrieval Operations

    Energy Technology Data Exchange (ETDEWEB)

    MAY, T.H.

    2000-04-21

    A nonradioactive chemical vapor space source term for tanks on the Phase 1 and the extended Phase 1 delivery, storage, and disposal mission was determined. Operations modeled included mixer pump operation and DST waste transfers. Concentrations of ammonia, specific volatile organic compounds, and quantitative volumes of aerosols were estimated.

  1. Latest innovations in large area web coating technology via plasma enhanced chemical vapor deposition source technology

    International Nuclear Information System (INIS)

    In this article, the authors discuss the latest results of our development of large area plasma enhanced chemical vapor deposition (PECVD) source technologies for flexible substrates. A significant challenge is the economical application of thin films for use as vapor barriers, transparent conductive oxides, and optical interference thin films. Here at General Plasma the authors have developed two innovative PECVD source technologies that provide an economical alternative to low temperature sputtering technologies and enable some thin film materials not accessible by sputtering. The Penning Discharge Plasma (PDP trade mark sign ) source is designed for high rate direct PECVD deposition on insulating, temperature sensitive web [J. Modocks, Proceedings of the Society of Vacuum Coaters, 2003 (unpublished), p. 187]. This technology has been utilized to deposit SiO2 and SiC:H for barrier applications [V. Shamamian et al. Proceedings of the Flexible Displays and Manufacturing Conferrence, 2006 (unpublished)]. The Plasma Beam Source (PBS trade mark sign ) is a remote plasma source that is more versatile for deposition on not only insulating flexible substrates but also conductive or rigid substrates for deposition of thin films that are sensitive to the high ion bombardment flux inherent to the PDP trade mark sign technology. The authors have developed PBS thin film processes in our laboratory for deposition of SiO2, SiC:O, SiN:C, SiN:H, ZnO, FeOx, and Al2O3. [M. A. George, Conference Proceedings of the Association of Industrial Metallizers, Coaters, and Laminators (AIMCAL), 2007 (unpublished)]. The authors discuss the design of the patented sources, plasma physics, and chemistry of the deposited thin films.

  2. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  3. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  4. Process Parameters for Successful Synthesis of Carbon Nanotubes by Chemical Vapor Deposition: Implications for Chemical Mechanisms and Life-cycle Assessment

    Science.gov (United States)

    Xue, Ke

    Manufacturing of carbon nanotubes (CNTs) via chemical vapor deposition (CVD) calls for thermal treatment associated with gas-phase rearrangement and catalyst deposition to achieve high cost efficiency and limited influence on environmental impact. Taking advantage of higher degree of structure control and economical efficiency, catalytic chemical vapor deposition (CCVD) has currently become the most prevailing synthesis approach for the synthesis of large-scale pure CNTs in past years. Because the synthesis process of CNTs dominates the potential ecotoxic impacts, materials consumption, energy consumption and greenhouse gas emissions should be further limited to efficiently reduce life cycle ecotoxicity of carbon naotubes. However, efforts to reduce energy and material requirements in synthesis of CNTs by CCVD are hindered by a lack of mechanistic understanding. In this thesis, the effect of operating parameters, especially the temperature, carbon source concentration, and residence time on the synthesis were studied to improve the production efficiency in a different angle. Thus, implications on the choice of operating parameters could be provided to help the synthesis of carbon nanotubes. Here, we investigated the typical operating parameters in conditions that have yielded successful CNT production in the published academic literature of over seventy articles. The data were filtered by quality of the resultant product and deemed either "successful" or "unsuccessful" according to the authors. Furthermore, growth rate data were tabulated and used as performance metric for the process whenever possible. The data provided us an opportunity to prompt possible and common methods for practioners in the synthesis of CNTs and motivate routes to achieve energy and material minimization. The statistical analysis revealed that methane and ethylene often rely on thermal conversion process to form direct carbon precursor; further, methane and ethylene could not be the direct

  5. Nanostructure and nanochemistry of gate dielectrics and processing of tunable dielectrics by chemical vapor deposition

    Science.gov (United States)

    Wang, Chang-Gong

    2002-01-01

    PbTiO3-SrTiO3 (PST) thin films that are voltage tunable were developed for high-frequency application by a metal-organic chemical vapor deposition technique at rates of 10--15 nm/min. PST films (90--150nm) were deposited on Pt/TiO2/SiO2/Si and Sapphire (0001) substrates and characterized by various techniques to control the composition and structure. The tunability and dielectric loss (tandelta) of a 90nm PST film were 37% and 0.02, respectively, at 1MHz and 3V in a parallel plates capacitor (Pt/PST/Pt) configuration. PST films on (0001) Sapphire were epitaxial with an orientation relationship of PST [1 1 1]// Sapphire [0 0 0 1], and in-plane alignment of PST [1 i 0]// Sapphire [2 i i 0] and PST [i i 2]// Sapphire [0 1 i 0]. A coplanar waveguide structure was used to determine the tunability (31.3%) and figure of merit (13 degrees/dB) of an epitaxial 100nm PST film on Sapphire at 12 GHz. The tandelta, derived from transmission-type resonator, is explained in terms of composition inhomogeneities and in-plane biaxial stress due to lattice mismatch between PST and Sapphire. A 4nm-ZrOx/1.2nm-SiOx layer structure was formed on 200mm Si wafers by a manufacturable atomic layer chemical vapor deposition (ALCVD) technique for advanced metal oxide semiconductor gate dielectrics. The nanostructure and nanochemistry of this gate stack were investigated by various techniques, before and after oxygen annealing (700°C). The results showed that a multiphase and heterogeneous structure evolved, defined as Zr-O/interlayer(IL)/Si stack. The critical parameters that control the nanostructural and nanochemical evolution are discussed using some simple mechanistic explanations and literature data. The stacks were characterized for their dielectric and electrical properties using a Pt/Zr-O/IL/Si capacitor configuration. The flat band shift (DeltaV FB), capacitance voltage hysteresis, and leakage current density were correlated with defects and roughness of the interface, thickness of IL

  6. Chemical Vapor Deposition of MoS2: Insight Into the Growth Mechanism by Separated Gas Flow Experiments.

    Science.gov (United States)

    Yanase, Takashi; Watanabe, Sho; Weng, Mengting; Nagahama, Taro; Shimada, Toshihiro

    2016-04-01

    We report detailed experiments on chemical vapor deposition of an atomic' layer semiconductor MoS2. We developed a new type of CVD system in which MoO3 and S sources are separately supplied to the substrates. It has become possible to precisely control the supply of the materials separately in the order of seconds. Raman and XPS analysis of the films grown under various conditions revealed that the initially obtained films are S-deficient and complete stoichiometry is reached after several minutes under S vapor flow. PMID:27451608

  7. Studies on photo-electro-chemical catalytic degradation of acid scarlet 3R dye

    Institute of Scientific and Technical Information of China (English)

    LI Mingyu; XIONG Lin; CHEN Yunyun; ZHANG Na; ZHANG Yuanming; YIN Hua

    2005-01-01

    A new type of photo-electro-chemical catalytic reactor was designed.Cathode and anode of the new reactor were made of high-purity graphite and titanium dioxide electrode respectively.A saturated calomel electrode (SCE) was used as the reference electrode.Under the condition of ultraviolet radiation and anodic bias-voltage, acid scarlet 3R was degraded by the process of photoelectrocatalysis with titanium dioxide electrode in anodic compartment, while it was degraded by electrogenerated Fenton's reagent and hydrogen peroxide through reducing dissolved oxygen with graphite electrode in catholyte.The new reactor made the best use of photogenerated holes and photogenerated charge on the anode of the new reactor, which achieved the purpose of degrading acid scarlet 3R in the cathodic and anodic compartments simultaneously, I.e."two electrodes and double effect".The experimental results showed that, compared with other photoelectrocatalysis reactors ("two electrodes and single effect" reactor), the new reactor has obviously enhanced the degradation of acid scarlet 3R dye.With the concentration of the dye being 30 mg·L-1 in water, under the operating conditions that when the inert supporting electrolyte concentration was 0.02 mol·L-1 sodium sulfate, initial solution pH=3, and cathodic potential -Ec=0.66 V, the highest decolorizing efficiency of 92% was accomplished in cathodic compartment,and that of 60% in anodic compartment.

  8. Fractional Catalytic Pyrolysis Technology for the Production of Upgraded Bio-oil using FCC Catalyst

    OpenAIRE

    Mante, Nii Ofei Daku

    2011-01-01

    Catalytic pyrolysis technology is one of the thermochemical platforms used to produce high quality bio-oil and chemicals from biomass feedstocks. In the catalytic pyrolysis process, the biomass is rapidly heated under inert atmosphere in the presence of an acid catalyst or zeolite to promote deoxygenation and cracking of the primary vapors into hydrocarbons and small oxygenates. This dissertation examines the utilization of conventional fluid catalytic cracking (FCC) catalyst in the fractiona...

  9. Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds.

    Science.gov (United States)

    Shi, Yujun

    2015-02-17

    CONSPECTUS: Hot wire chemical vapor deposition (HWCVD), also referred to as catalytic CVD (Cat-CVD), has been used to produce Si-containing thin films, nanomaterials, and functional polymer coatings that have found wide applications in microelectronic and photovoltaic devices, in automobiles, and in biotechnology. The success of HWCVD is largely due to its various advantages, including high deposition rate, low substrate temperatures, lack of plasma-induced damage, and large-area uniformity. Film growth in HWCVD is induced by reactive species generated from primary decomposition on the metal wire or from secondary reactions in the gas phase. In order to achieve a rational and efficient optimization of the process, it is essential to identify the reactive species and to understand the chemical kinetics that govern the production of these precursor species for film growth. In this Account, we report recent progress in unraveling the complex gas-phase reaction chemistry in the HWCVD growth of silicon carbide thin films using organosilicon compounds as single-source precursors. We have demonstrated that laser ionization mass spectrometry is a powerful diagnostic tool for studying the gas-phase reaction chemistry when combined with the methods of isotope labeling and chemical trapping. The four methyl-substituted silane molecules, belonging to open-chain alkylsilanes, dissociatively adsorb on W and Ta filaments to produce methyl radical and H2 molecule. Under the typical deposition pressures, with increasing number of methyl substitution, the dominant chemistry occurring in the gas phase switches from silylene/silene reactions to free-radical short chain reactions. This change in dominant reaction intermediates from silylene/silene to methyl radicals explains the observation from thin film deposition that silicon carbide films become more C-rich with a decreasing number of Si-H bonds in the four precursor molecules. In the case of cyclic monosilacyclobutanes, we have

  10. Thermal desorption study of catalytic systems. Communication 20. Adsorption of water vapors on the calcium aluminate components of catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Nissenbaum, V.D.; Danyushevskii, V.Y.; Golosman, E.Z.; Rubinstein, A.M.; Yakerson, V.I.

    1985-05-01

    Ca aluminates are used as a component of catalysts of gas-phase processes, some of which take place with the participation of water. Nickel calcium aluminate catalysts are thus used for hydrogenation of CO and CO/sub 2/ to CH/sub 4/ and water; zinc calcium aluminate catalysts are used for sulfur purification of process gases, where water is liberated during sulfiding of ZnO; and copper zinc calcium aluminate catalysts are used in low-temperature conversion of CO with water vapor. It is also known that Ca aluminates undergo various transformations in aqueous media with the formation of Ca hydroaluminates. This paper discusses the adsorption of water from the gas phase on calcium aluminate systems, which was investigated by the thermal desorption method. Samples of varying phase composition, different CaO/Al/sub 2/O/sub 3/ ratios, and specific surface areas were also studied and are reported on here.

  11. Catalytic reactor for promoting a chemical reaction on a fluid passing therethrough

    Science.gov (United States)

    Roychoudhury, Subir (Inventor); Pfefferle, William C. (Inventor)

    2001-01-01

    A catalytic reactor with an auxiliary heating structure for raising the temperature of a fluid passing therethrough whereby the catalytic reaction is promoted. The invention is a apparatus employing multiple electrical heating elements electrically isolated from one another by insulators that are an integral part of the flow path. The invention provides step heating of a fluid as the fluid passes through the reactor.

  12. Physico-Chemical and Catalytic Properties of Mesoporous CuO-ZrO2 Catalysts

    Directory of Open Access Journals (Sweden)

    Sulaiman N. Basahel

    2016-04-01

    Full Text Available Mesoporous CuO-ZrO2 catalysts were prepared and calcined at 500 °C. The performance of the synthesized catalysts for benzylation of benzene using benzyl chloride was studied. The bare support (macroporous ZrO2 offered 45% benzyl chloride conversion after reaction time of 10 h at 75 °C. Significant increase in benzyl chloride conversion (98% was observed after CuO loading (10 wt. % on porous ZrO2 support. The conversion was decreased to 80% with increase of CuO loading to 20 wt. %. Different characterization techniques (XRD, Raman, diffuse reflectance UV-vis, N2-physisorption, H2-TPR, XPS and acidity measurements were used to evaluate physico-chemical properties of CuO-ZrO2 catalysts; the results showed that the surface and structural characteristics of the ZrO2 phase as well as the interaction between CuO-ZrO2 species depend strongly on the CuO content. The results also indicated that ZrO2 support was comprised of monoclinic and tetragonal phases with macropores. An increase of the volume of monoclinic ZrO2 phase was observed after impregnation of 10 wt. % of CuO; however, stabilization of tetragonal ZrO2 phase was noticed after loading of 20 wt. % CuO. The presence of low-angle XRD peaks indicates that mesoscopic order is preserved in the calcined CuO-ZrO2 catalysts. XRD reflections due to CuO phase were not observed in case of 10 wt. % CuO supported ZrO2 sample; in contrast, the presence of crystalline CuO phase was observed in 20 wt. % CuO supported ZrO2 sample. The mesoporous 10 wt. % CuO supported ZrO2 catalyst showed stable catalytic activity for several reaction cycles. The observed high catalytic activity of this catalyst could be attributed to the presence of a higher number of dispersed interactive CuO (Cu2+-O-Zr4+ species, easy reducibility, and greater degree of accessible surface Lewis acid sites.

  13. Scanning microwave microscope imaging of micro-patterned monolayer graphene grown by chemical vapor deposition

    Science.gov (United States)

    Myers, J.; Mou, S.; Chen, K.-H.; Zhuang, Y.

    2016-02-01

    Characterization of micro-patterned chemical vapor deposited monolayer graphene using a scanning microwave microscope has been presented. Monolayer graphene sheets deposited on a copper substrate were transferred to a variety of substrates and micro-patterned into a periodic array of parallel lines. The measured complex reflection coefficients exhibit a strong dependency on the operating frequency and on the samples' electrical conductivity and permittivity. The experiments show an extremely high sensitivity by detecting image contrast between single and double layer graphene sheets. Correlating the images recorded at the half- and quarter-wavelength resonant frequencies shows that the relative permittivity of the single layer graphene sheet is above 105. The results are in good agreement with the three dimensional numerical electromagnetic simulations. This method may be instrumental for a comprehensive understanding of the scanning microwave microscope image contrast and provide a unique technique to estimate the local electrical properties with nano-meter scale spatial resolution of two dimensional materials at radio frequency.

  14. Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition.

    Science.gov (United States)

    Li, Xuesong; Colombo, Luigi; Ruoff, Rodney S

    2016-08-01

    Over the past decade, graphene has advanced rapidly as one of the most promising materials changing human life. Development of production-worthy synthetic methodologies for the preparation of various types of graphene forms the basis for its investigation and applications. Graphene can be used in the forms of either microflake powders or large-area thin films. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates. Both metal and dielectric substrates have been explored; while dielectric substrates are preferred over any other substrate, much higher quality graphene large-area films have been grown on metal substrates such as Cu. The focus here is on the progress of graphene synthesis on Cu foils by CVD, including various CVD techniques, graphene growth mechanisms and kinetics, strategies for synthesizing large-area graphene single crystals, graphene transfer techniques, and, finally, challenges and prospects are discussed. PMID:26991960

  15. Metalorganic chemical vapor deposition of few-layer sp2 bonded boron nitride films

    Science.gov (United States)

    Paduano, Qing; Snure, Michael; Weyburne, David; Kiefer, Arnold; Siegel, Gene; Hu, Jianjun

    2016-09-01

    A systematic study of the growth of atomically smooth few-layer sp2 bonded BN on 50 mm sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using Triethylboron (TEB) and NH3 as precursors is described. Based on the experimental results obtained using Raman spectroscopy, atomic force microscopy (AFM), X-ray reflectance measurements and transmission electron microscopy, we explored the growth parameter space and identified three different growth modes: random three-dimensional (3D) growth, a self-terminating few-layer growth mode, and a very slow layer-by-layer mode. The growth mode depends on the temperature, pressure, V/III ratio, and surface nitridation conditions, as follows: 3D island growth is dominant in the low V/III range and is characterized by a decreasing growth rate with increasing deposition temperature. When the V/III ratio is increased this 3D island growth mode transitions to a self-terminating few-layer growth mode. An additional transition from self-terminating growth to 3D growth occurs when the growth pressure is increased. Very slow layer by layer growth is found at high temperature and low pressure. Finally, substrate surface nitridation promotes self-terminating growth that results in atomically smooth films.

  16. The production of oxygenated polycrystalline graphene by one-step ethanol-chemical vapor deposition.

    Science.gov (United States)

    Paul, Rajat K; Badhulika, Sushmee; Niyogi, Sandip; Haddon, Robert C; Boddu, Veera M; Costales-Nieves, Carmen; Bozhilov, Krassimir N; Mulchandani, Ashok

    2011-10-01

    Large-area mono- and bilayer graphene films were synthesized on Cu foil (~ 1 inch(2)) in about 1 min by a simple ethanol-chemical vapor deposition (CVD) technique. Raman spectroscopy and high resolution transmission electron microscopy revealed the synthesized graphene films to have polycrystalline structures with 2-5 nm individual crystallite size which is a function of temperature up to 1000°C. X-ray photoelectron spectroscopy investigations showed about 3 atomic% carboxylic (COOH) functional groups were formed during growth. The field-effect transistor devices fabricated using polycrystalline graphene as conducting channel (L(c)=10 μm; W(c)=50 μm) demonstrated a p-type semiconducting behavior with high drive current and Dirac point at ~35 V. This simple one-step method of growing large area polycrystalline graphene films with semiconductor properties and easily functionalizable groups should assist in the realization of potential of polycrystalline graphene for nanoelectronics, sensors and energy storage devices. PMID:22408276

  17. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  18. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  19. Transport Properties of MgB2 Films Grown by Hybrid Physical Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    We prepared four different MgB2 films on Al2O3 by hybrid physical chemical vapor deposition method with thicknesses ranging from 0.65 μm to 1.2 μm X-ray diffraction patterns confirm that all the MgB2 films are c-axis oriented perpendicular to Al2O3 substrates. The superconducting onset temperature of MgB2 films were between 39.39K and 40.72K. The residual resistivity ratio of the MgB2 films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density (Jc) and resistivity, and determined the upper critical field (Hc2 ) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the (Hc2 ) parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of Jc and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of MgB2 along the c-axis.

  20. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  1. On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Handuja Sangeeta

    2010-01-01

    Full Text Available Abstract Carbon nanotubes (CNTs were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

  2. Self-assembly of octadecyltrichlorosilane monolayers on silicon-based substrates by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dong Jinping [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Wang Anfeng [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Ng, K.Y. Simon [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States); Mao Guangzhao [Department of Chemical Engineering and Materials Science, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202 (United States)]. E-mail: gzmao@eng.wayne.edu

    2006-12-05

    Increasingly, organosilane self-assembled monolayers (SAMs) are used to modify the surfaces of silicon-based sensors and atomic force microscope (AFM) probes. Organosilane SAMs are preferred due to their fast and easy preparation, stability, and applicability to a wide range of substrates. The traditional dip coating method from solution often yields ill-defined particulate aggregates on the two-dimensional SAM. The presence of such three-dimensional aggregates seriously reduces the performance of miniaturized biosensor devices and AFM probes. It is difficult to control the amount of water in solution-based deposition. This paper describes a chemical vapor deposition (CVD) method to deposit octadecyltrichlorosilane (OTS) monolayers on silicon wafers and AFM probes under vacuum condition. OTS coated surfaces with static water contact angle ranging from 20{sup o} to 107{sup o} can be obtained by controlling the deposition conditions. The silicon substrates and AFM probes after CVD are characterized by AFM, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and contact angle goniometry. The OTS monolayer is in a uniform low-density state below 65%. Above 65%, densely packed crystalline-like domains start to form. It takes 24 h to reach the adsorption saturation. The time span in the CVD deposition is much longer than the solution case and thus allowing precise variation of the substrate hydrophobicity for biosensor applications.

  3. Chemical vapor deposition graphene transfer process to a polymeric substrate assisted by a spin coater

    Science.gov (United States)

    Kessler, Felipe; da Rocha, Caique O. C.; Medeiros, Gabriela S.; Fechine, Guilhermino J. M.

    2016-03-01

    A new method to transfer chemical vapor deposition graphene to polymeric substrates is demonstrated here, it is called direct dry transfer assisted by a spin coater (DDT-SC). Compared to the conventional method DDT, the improvement of the contact between graphene-polymer due to a very thin polymeric film deposited by spin coater before the transfer process prevented air bubbles and/or moisture and avoided molecular expansion on the graphene-polymer interface. An acrylonitrile-butadiene-styrene copolymer, a high impact polystyrene, polybutadiene adipate-co-terephthalate, polylactide acid, and a styrene-butadiene-styrene copolymer are the polymers used for the transfers since they did not work very well by using the DDT process. Raman spectroscopy and optical microscopy were used to identify, to quantify, and to qualify graphene transferred to the polymer substrates. The quantity of graphene transferred was substantially increased for all polymers by using the DDT-SC method when compared with the DDT standard method. After the transfer, the intensity of the D band remained low, indicating low defect density and good quality of the transfer. The DDT-SC transfer process expands the number of graphene applications since the polymer substrate candidates are increased.

  4. Initiated chemical vapor deposited nanoadhesive for bonding National Ignition Facility's targets

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Tom [Univ. of California, Berkeley, CA (United States)

    2016-05-19

    Currently, the target fabrication scientists in National Ignition Facility Directorate at Lawrence Livermore National Laboratory (LLNL) is studying the propagation force resulted from laser impulses impacting a target. To best study this, they would like the adhesive used to glue the target substrates to be as thin as possible. The main objective of this research project is to create adhesive glue bonds for NIF’s targets that are ≤ 1 μm thick. Polyglycidylmethacrylate (PGMA) thin films were coated on various substrates using initiated chemical vapor deposition (iCVD). Film quality studies using white light interferometry reveal that the iCVD PGMA films were smooth. The coated substrates were bonded at 150 °C under vacuum, with low inflow of Nitrogen. Success in bonding most of NIF’s mock targets at thicknesses ≤ 1 μm indicates that our process is feasible in bonding the real targets. Key parameters that are required for successful bonding were concluded from the bonding results. They include inert bonding atmosphere, sufficient contact between the PGMA films, and smooth substrates. Average bond strength of 0.60 MPa was obtained from mechanical shearing tests. The bonding failure mode of the sheared interfaces was observed to be cohesive. Future work on this project will include reattempt to bond silica aerogel to iCVD PGMA coated substrates, stabilize carbon nanotube forests with iCVD PGMA coating, and kinetics study of PGMA thermal crosslinking.

  5. Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition

    Energy Technology Data Exchange (ETDEWEB)

    Schwarzkopf, J., E-mail: schwarzkopf@ikz-berlin.de [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany); Schmidbauer, M.; Duk, A.; Kwasniewski, A. [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany); Anooz, S. Bin [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany); Physics Department, Faculty of Science, Hadhramout University of Science and Technology, Mukalla 50511, Republic of Yemen (Yemen); Wagner, G. [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany); Devi, A. [Inorganic Materials Chemistry, Ruhr-University Bochum, Universitaetsstr. 150, 44801 Bochum (Germany); Fornari, R. [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany)

    2011-10-31

    The liquid-delivery spin metal-organic chemical vapor phase deposition method was used to grow epitaxial sodium-bismuth-titanate films of the system Bi{sub 4}Ti{sub 3}O{sub 12} + xNa{sub 0.5}Bi{sub 0.5}TiO{sub 3} on SrTiO{sub 3}(001) substrates. Na(thd), Ti(O{sup i}Pr){sub 2}(thd){sub 2} and Bi(thd){sub 3}, solved in toluene, were applied as source materials. Depending on the substrate temperature and the Na/Bi ratio in the gas phase several structural phases of sodium-bismuth-titanate were detected. With increasing temperature and/or Na/Bi ratio, phase transitions from an Aurivillius phase with m = 3 to m = 4 via an interleaved state with m = 3.5, and, finally, to Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} with perovskite structure (m = {infinity}) were established. These phase transitions proceed at remarkably lower temperatures than in ceramics or bulk crystals for which they had been exclusively observed so far.

  6. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    Science.gov (United States)

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-12-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

  7. Ultralight boron nitride aerogels via template-assisted chemical vapor deposition

    Science.gov (United States)

    Song, Yangxi; Li, Bin; Yang, Siwei; Ding, Guqiao; Zhang, Changrui; Xie, Xiaoming

    2015-05-01

    Boron nitride (BN) aerogels are porous materials with a continuous three-dimensional network structure. They are attracting increasing attention for a wide range of applications. Here, we report the template-assisted synthesis of BN aerogels by catalyst-free, low-pressure chemical vapor deposition on graphene-carbon nanotube composite aerogels using borazine as the B and N sources with a relatively low temperature of 900 °C. The three-dimensional structure of the BN aerogels was achieved through the structural design of carbon aerogel templates. The BN aerogels have an ultrahigh specific surface area, ultralow density, excellent oil absorbing ability, and high temperature oxidation resistance. The specific surface area of BN aerogels can reach up to 1051 m2 g-1, 2-3 times larger than the reported BN aerogels. The mass density can be as low as 0.6 mg cm-3, much lower than that of air. The BN aerogels exhibit high hydrophobic properties and can absorb up to 160 times their weight in oil. This is much higher than porous BN nanosheets reported previously. The BN aerogels can be restored for reuse after oil absorption simply by burning them in air. This is because of their high temperature oxidation resistance and suggests broad utility as water treatment tools.

  8. Investigation of metalorganic chemical vapor deposition grown CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sudharsanan, R.; Rohatgi, A. (Georgia Inst. of Tech., Atlanta (USA). School of Electrical Engineering)

    1991-03-01

    Polycrystalline CdTe films were grown on CdS/SnO{sub 2}/glass substrates by metalorganic chemical vapor deposition (MOCVD) for solar cell applications. Cells fabricated on these films showed efficiency of 9.7% which is the highest efficiency reported so far for MOCVD grown CdTe solar cells. The bias-dependent spectral response of the 9.7% efficient cell showed an external quantum efficiency greater than 0.85 at zero bias but a significant wavelength-independent reduction in spectral response at higher voltages. The interface recombination model was used to calculate the interface collection function term to quantify the open-circuit voltage (V{sub oc}) and fill factor losses in the high efficiency cell. It was found that the interface recombination reduces the V{sub oc} and fill factor by 60 mV and 0.1 respectively. It was estimated that efficiency as high as 13.5% can be achieved by improving CdTe/CdS interface quality. (orig.).

  9. Improvement of the dosimetric properties of chemical-vapor-deposited diamond films by neutron irradiation

    International Nuclear Information System (INIS)

    The performance of chemical-vapor-deposited (CVD) diamond films as on-line dosimeters has been substantially improved after irradiation with fast neutrons up to a fluence of 5x1014 n/cm2. This is correlated to a decrease of more than one order of magnitude in the concentration of deep levels with activation energy in the range 0.9-1.4 eV, as observed by thermally stimulated current and photoinduced current transient spectroscopy. As a consequence, a fast and reproducible dynamic response is observed during irradiation with a 6 MV photon beam from linear accelerator and with a Co60 source. A quasilinear dependence of the current on the dose rate is obtained in the range of interest for clinical applications (0.1-10 Gy/min). The resulting sensitivity is definitely higher than that of standard ionization chambers, and compares favorably with those of standard silicon dosimeters and of best-quality natural and CVD diamond devices

  10. Propeller-Shaped ZnO Nanostructures Obtained by Chemical Vapor Deposition: Photoluminescence and Photocatalytic Properties

    Directory of Open Access Journals (Sweden)

    S. L. Wang

    2012-01-01

    Full Text Available Propeller-shaped and flower-shaped ZnO nanostructures on Si substrates were prepared by a one-step chemical vapor deposition technique. The propeller-shaped ZnO nanostructure consists of a set of axial nanorod (50 nm in tip, 80 nm in root and 1 μm in length, surrounded by radial-oriented nanoribbons (20–30 nm in thickness and 1.5 μm in length. The morphology of flower-shaped ZnO nanostructure is similar to that of propeller-shaped ZnO, except the shape of leaves. These nanorods leaves (30 nm in diameter and 1–1.5 μm in length are aligned in a radial way and pointed toward a common center. The flower-shaped ZnO nanostructures show sharper and stronger UV emission at 378 nm than the propeller-shaped ZnO, indicating a better crystal quality and fewer structural defects in flower-shaped ZnO. In comparison with flower-shaped ZnO nanostructures, the propeller-shaped ZnO nanostructures exhibited a higher photocatalytic property for the photocatalytic degradation of Rhodamine B under UV-light illumination.

  11. Air-stable spin-coated naphthalocyanine transistors for enhanced chemical vapor detection.

    Science.gov (United States)

    Royer, James E; Zhang, Chengyi; Kummel, Andrew C; Trogler, William C

    2012-04-10

    Air-stable organic thin-film transistor (OTFT) sensors fabricated using spin-cast films of 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine (OBNc) demonstrated improved chemical vapor sensitivity and selectivity relative to vacuum-deposited phthalocyanine (H(2)Pc) OTFTs. UV-vis spectroscopy data show that annealed spin-cast OBNc films exhibit a red-shift in the OBNc Q-band λ(max) which is generally diagnostic of improved π-orbital overlap in phthalocyanine ring systems. Annealed OBNc OTFTs have mobilities of 0.06 cm(2) V(-1) s(-1), low threshold voltages (|V(th)| < 1 V), and on/off ratios greater than 10(6). These air-stable device parameters are utilized for sensing modalities which enhance the sensitivity and selectivity of OBNc OTFTs relative to H(2)Pc OTFTs. While both sensors exhibit mobility decreases for all analytes, only OBNc OTFTs exhibit V(th) changes for highly polar/nonpolar analytes. The observed mobility decreases for both sensors are consistent with electron donation trends via hydrogen bonding by basic analytes. In contrast, V(th) changes for OBNc sensors appear to correlate with the analyte's octanol-water partition coefficient, consistent with polar molecules stabilizing charge in the organic semiconductor film. The analyte induced V(th) changes for OBNc OTFTs can be employed to develop selective multiparameter sensors which can sense analyte stabilized fixed charge in the film. PMID:22376236

  12. Chemical Vapor Deposited Few-Layer Graphene as an Electron Field Emitter.

    Science.gov (United States)

    Behural, Sanjay K; Nayak, Sasmita; Yang, Qiaoqin; Hirose, Akira; Janil, Omkar

    2016-01-01

    Chemical vapor deposition (CVD) growth of graphene on polycrystalline copper (Cu) foil in a low pressure conditions has been presented, aiming to achieve the highest quality with large-scale fabrications, which requires comprehensive understanding and effective controlling of the growth process. Herein, few-layer graphene (FLG) films with large-domain sizes were grown on Cu metal catalyst substrates using a vertical mass-flow hot-filament CVD reactor, with the intention of large scale production, by optimizing the CVD system and three of the process parameters: (i) gas flow compositions, (ii) substrate annealing time and (iii) graphene deposition time. The detailed scanning electron microscope and Raman spectroscopy analysis indicate that all the above mentioned process parameters affect growth of FLG film on Cu substrate. The presence of two intense peaks, G and 2D-band at 1583.6 and 2702.6 cm⁻¹ for synthesized sample at optimized conditions (H₂/CH₄ ratio of 50:1 at graphene deposition time of 10 minutes and substrate annealed time for 20 minutes) revealed the formation of FLG films with large domain size. These graphene films on Cu have shown the room temperature field electron emission characteristics, hence appears to be prospective candidate for vacuum nanoelectronics. PMID:27398456

  13. Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition

    Science.gov (United States)

    Gao, Libo; Xu, Hai; Li, Linjun; Yang, Yang; Fu, Qiang; Bao, Xinhe; Loh, Kian Ping

    2016-06-01

    The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 °C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30°-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nm to 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates.

  14. Structure and photoluminescence of molybdenum selenide nanomaterials grown by hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhu, M.K. [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Ostrikov, K., E-mail: kostya.ostrikov@qut.edu.au [Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, NSW 2070 (Australia); Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000 (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

    2015-10-25

    Molybdenum selenide nanomaterials with different structures are synthesized on silicon substrates coated with gold films by hot filament chemical vapor deposition (HFCVD) in nitrogen environment, where molybdenum trioxide and selenium powders are used as source materials. The structure and composition of the synthesized molybdenum selenide nanomaterials are studied using field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. The results indicate that the structures of molybdenum selenide change from nanoflakes to nanoparticles with the increase of content of molybdenum trioxide precursor. The photoluminescence (PL) excitation using the 325 nm line of He–Cd laser as the excitation source generates green light with the wavelength of about 512–516 nm. The formation of molybdenum selenide nanomaterials is determined by the decomposition rates of molybdenum trioxide in HFCVD. The possible factors that affect the generation of green PL bands are analyzed. These outcomes of this work enrich our knowledge on the synthesis of transition metal dichalcogenides and contribute to the development of applications of these materials in optoelectronic devices. - Highlights: • Molybdenum selenide nanoflakes, nanoparticles and hybrids produced by HFCVD. • Uncommon MoO{sub 3} and Se precursor co-location and mixing and effective MoO{sub 3} decomposition. • Morphology change from nanoflakes to nanoparticles with higher ratio of MoO{sub 3} precursor. • Strong photoluminescence emission of green light with a wavelength of ∼512–516 nm.

  15. Open-air type plasma chemical vaporization machining by applying pulse-width modulation control

    International Nuclear Information System (INIS)

    Photolithography techniques have been used to enable the low-cost and high-speed transfer of a pattern onto a silicon wafer. However, owing to the high integration of semiconductors, extreme ultraviolet will be increasingly used as the exposure light source and all optics must be reflective to focus light because the wavelength of the light will be so short that it cannot pass through a lens. The form accuracy of reflective optics affects the accuracy of transfer, and a flatness of less than 32 nm on a 6 inch photomask substrate is required according to the International Technology Roadmap for Semiconductors roadmap. Plasma chemical vaporization machining is an ultraprecise figuring technique that enables a form accuracy of nanometre order to be obtained. In our previous study, the removal volume was controlled by changing the scanning speed of the worktable. However, a discrepancy between the theoretical scanning speed and the actual scanning speed occurred owing to the inertia of the worktable when the change in speed was rapid. As an attempt to resolve this issue, we controlled the removal volume by controlling the electric power applied during plasma generation while maintaining a constant scanning speed. The methods that we adapted to control the applied electric power were amplitude-modulation (AM) control and pulse-width modulation (PWM) control. In this work, we evaluate the controllability of the material removal rate in the AM and PWM control modes. (paper)

  16. Triggering the Growth of Large Single Crystal Graphene by Chemical Vapor Deposition

    Science.gov (United States)

    Wu, Tianru; Wang, Haomin; Ding, Guqiao; Jiang, Da; Xie, Xiaoming; Jiang, Mianheng

    2013-03-01

    Graphene, a monolayer of sp2 carbon atoms, has been attracting great interests as an ideal two dimensional crystalline material. Fabrication technique for wafer scale graphene via chemical vapor deposition (CVD) was developed several years ago. However, large scale graphene films from CVD method so far are found to be polycrystalline, consisting of numerous grain boundaries, which greatly degrade the electrical and mechanical properties of graphene. Recently, we obtained hexagonal-shaped single-crystal monolayer graphene domains (~1.2 mm). We adapted a strategy to synthesize larger size single crystal grains by regulating the supply of reactants and hytrogen. Nucleation density can be decreased to less than 1000 nuclei /m2. Gradually increase in the supply of reactants could break the equilibrium of growth and etching at the edge of hexagonal-shaped graphene grains. It drives the reaction toward quick growth of graphene domains during the whole CVD process. The graphene grains we obtained show high crystalline quality with high mobility of ~13000 cm2V-1s-1, which is comparable to that of exfoliated graphene. The results achieved will definitely benefit for further practical application of graphene electronics.

  17. Chemical vapor deposition of high quality graphene films from carbon dioxide atmospheres.

    Science.gov (United States)

    Strudwick, Andrew James; Weber, Nils Eike; Schwab, Matthias Georg; Kettner, Michel; Weitz, R Thomas; Wünsch, Josef R; Müllen, Klaus; Sachdev, Hermann

    2015-01-27

    The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth. PMID:25398132

  18. TiOx thin films grown on Pd(100) and Pd(111) by chemical vapor deposition

    Science.gov (United States)

    Farstad, M. H.; Ragazzon, D.; Grönbeck, H.; Strømsheim, M. D.; Stavrakas, C.; Gustafson, J.; Sandell, A.; Borg, A.

    2016-07-01

    The growth of ultrathin TiOx (0≤x≤2) films on Pd(100) and Pd(111) surfaces by chemical vapor deposition (CVD), using Titanium(IV)isopropoxide (TTIP) as precursor, has been investigated by high resolution photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Three different TiOx phases and one Pd-Ti alloy phase have been identified for both surfaces. The Pd-Ti alloy phase is observed at the initial stages of film growth. Density functional theory (DFT) calculations for Pd(100) and Pd(111) suggest that Ti is alloyed into the second layer of the substrate. Increasing the TTIP dose yields a wetting layer comprising Ti2 + species (TiOx, x ∼0.75). On Pd(100), this phase exhibits a mixture of structures with (3 × 5) and (4 × 5) periodicity with respect to the Pd(100) substrate, while an incommensurate structure is formed on Pd(111). Most importantly, on both surfaces this phase consists of a zigzag pattern similar to observations on other reactive metal surfaces. Further increase in coverage results in growth of a fully oxidized (TiO2) phase on top of the partially oxidized layer. Preliminary investigations indicate that the fully oxidized phase on both Pd(100) and Pd(111) may be the TiO2(B) phase.

  19. The thermal properties of high purity and fully dense tungsten produced by chemical vapor deposition

    International Nuclear Information System (INIS)

    Highlights: • High purity and fully dense CVD-W samples were prepared. • The deposition rate of CVD-W is higher than 0.6 mm/h. • Thermal conductivity of CVD-W is higher than that of forged-W. • CVD-W had a higher threshold energy of crack initiation than that of forged W. • CVD-W has higher energy absorption than that of forged-W. - Abstract: The ultra-high purity (>99.9999 wt.%) and fully dense (19.23 g/cm3) tungsten (W) by chemical vapor deposition (CVD) was prepared with the deposition rate higher than 0.6 mm/h. The thermal diffusivity, specific heat, heat conductivity and coefficient of thermal expansion of CVD-W at the temperature range of 473–1273 K were measured. Thermal shock tests were carried out on a 60 kW electron-beam material testing scenario to investigate the crack-resistant performance of CVD-W, and the crack initiation threshold energies of CVD-W were achieved in 5 ms heating duration. Compared to forged-W, the higher heat conductivity (160.5–111 W/(m K)) and threshold energy of crack initiation (1.1–1.65 MJ/m2) of CVD-W can be attributed to the material characteristics including high purity, fully dense, rough surface composed of pyramid-like grains, and the columnar grain structures

  20. Incorporation of Nitrogen into Amorphous Carbon Films Produced by Surface-Wave Plasma Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    Wu Yuxiang(吴玉祥); Zhu Xiaodong(朱晓东); Zhan Rujuan(詹如娟)

    2003-01-01

    In order to study the influence of nitrogen incorporated into amorphous carbon films,nitrogenated amorphous carbon films have been deposited by using surface wave plasma chemical vapor deposition under various ratios of N2/CH4 gas flow. Optical emission spectroscopy has been used to monitor plasma features near the deposition zone. After deposition, the samples are checked by Raman spectroscopy and x-ray photo spectroscopy (XPS). Optical emission intensities of CH and N atom in the plasma are found to be enhanced with the increase in the N2/CH4 gas flow ratio, and then reach their maximums when the N2/CH4 gas flow ratio is 5%. A contrary variation is found in Raman spectra of deposited films. The intensity ratio of the D band to the G band (ID/IG) and the peak positions of the G and D bands all reach their minimums when the N2/CH4 gas flow ratio is 5%. These show that the structure of amorphous carbon films has been significantly modified by introduction of nitrogen.

  1. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    Science.gov (United States)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  2. Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire

    Science.gov (United States)

    Brom, Joseph; Ke, Yue; Du, Renzhong; Gagnon, Jarod; Li, Qi; Redwing, Joan

    2012-02-01

    High quality thin films of topological insulators continue to garner much interest. We report on the growth of highly-oriented thin films of Bi2Se3 on c-plane sapphire using hybrid physical-chemical vapor deposition (HPCVD). The HPCVD process utilizes the thermal decomposition of trimethyl bismuth (TMBi) and evaporation of elemental selenium in a hydrogen ambient to deposit Bi2Se3. Growth parameters including TMBi flow rate and decomposition temperature and selenium evaporation temperature were optimized, effectively changing the Bi:Se ratio, to produce high quality films. Glancing angle x- ray diffraction measurements revealed that the films were c-axis oriented on sapphire. Trigonal crystal planes were observed in atomic force microscopy images with an RMS surface roughness of 1.24 nm over an area of 2μmx2μm. Variable temperature Hall effect measurements were also carried out on films that were nominally 50-70 nm thick. Over the temperature range from 300K down to 4.2K, the carrier concentration remained constant at approximately 6x10^18 cm-3 while the mobility increased from 480 cm^2/Vs to 900 cm^2/Vs. These results demonstrate that the HPCVD technique can be used to deposit Bi2Se3 films with structural and electrical properties comparable to films produced by molecular beam epitaxy.

  3. Synthesis of vertically aligned carbon nanofibers-carbon nanowalls by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Okamoto, Atsuto; Tanaka, Kei; Yoshimura, Masamichi; Ueda, Kazuyuki; Ghosh, Pradip; Tanemura, Masaki

    2013-03-01

    Vertically aligned carbon nanofibers (VA-CNFs)-carbon nanowalls (CNWs) have been prepared on a silicon (Si) substrate by plasma-enhanced chemical vapor deposition. The VA-CNFs-CNWs were formed at bias voltage of - 185 V, whereas conventional VA-CNFs were synthesized under conditions of high bias voltages. Degenerated CNWs with turbostratic graphite structure were created on amorphous carbon layer around CNFs like a flag attached to a pole, which is evidenced by scanning electron microscopy, transmission electron microscopy, electron diffraction, and micro-Raman spectroscopy. Electron field emission characteristics of VA-CNFs-CNWs with unique microstructure, fabricated on the Si substrate, were primarily investigated. As a result, the VA-CNFs-CNWs showed the turn-on and the threshold fields of 1.7 V x microm(-1) and 3.35 V x microm(-1) with current densities of 10 nA x cm(-2) and 1 microA x cm(-2), respectively. The field enhancement factor beta was estimated to be 1059 by using Fowler-Nordheim theory. PMID:23755628

  4. Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4

    International Nuclear Information System (INIS)

    We report a low temperature atmospheric pressure chemical vapor deposition technique to deposit titanium oxide films on silicon wafers. The growth is achieved by using TiCl·H2O2 and O2 at temperatures ranging from 140 to 280 deg. C. Addition of H2O2 yields a significant reduction in the surface roughness with an enhanced deposition rate at temperatures as low as 170 deg. C. Growth at temperatures below 140 deg. C results in insignificant growth whereas at high temperatures a hazy and three-dimensional growth is observed. Using this technique a growth rate as high as 0.5 μm/h can be obtained with little roughness on the surface of the substrate. XRD, SEM, and FTIR analyses have been exploited to study the physical behavior of the layers. The electrical characterization of the films reveals a relative permittivity (εr) of 19-21 for the samples prepared with H2O2. A breakdown field of 1x107 V/cm is also obtained

  5. Support effect on carbon nanotube growth by methane chemical vapor deposition on cobalt catalysts

    International Nuclear Information System (INIS)

    The influence of the support on carbon nanotube production by methane chemical vapor deposition (CVD) on cobalt catalysts was investigated. N2 physisorption, X-ray diffractometry (XRD), temperature programmed reduction (TPR) and H2 and CO chemisorption techniques were used to characterize the structure of cobalt catalysts supported on different metal oxides (Al2O3, SiO2, Nb2O5 and TiO2). Raman spectroscopy, temperature programmed oxidation (TPO) and scanning electron microscopy (SEM) were used for the characterization and quantification of produced carbon species. On carbon nanotube growth, the catalyst produced three main carbon species: amorphous carbon, single walled carbon nanotubes (SWNT) and multi walled carbon nanotubes (MWNT). The characterization techniques showed that the catalyst selectivity to each kind of nanotube depended on the cobalt particle size distribution, which was influenced by the textural properties of the support. Co/TiO2 showed the highest selectivity towards single wall nanotube formation. This high selectivity results from the narrow size distribution of cobalt particles on TiO2. (author)

  6. Forced chemical vapor infiltration of tubular geometries: Modeling, design, and scale-up

    Energy Technology Data Exchange (ETDEWEB)

    Stinton, D.P.; Besmann, T.M.; Matlin, W.M. [and others

    1995-06-01

    In advanced indirectly fired coal combustion systems and externally fired combined cycle concepts, ceramic heat exchangers are required to transfer heat from the hot combustion gases to the clean air that drives the gas turbines. For high efficiencies, the temperature of the turbine inlet needs to exceed 1100{degrees}C and preferably be about 1260{degrees}C. The heat exchangers will operate under pressure and experience thermal and mechanical stresses during heating and cooling, and some transients will be severe under upset conditions. Silicon carbide-matrix composites are promising for such applications because of their high strength at elevated temperature, light weight, thermal and mechanical resistance, damage tolerance, and oxidation and corrosion resistance. Fiber-reinforced composite tubes of several fiber architectures were fabricated by forced chemical vapor infiltration (FCVI) and characterized. Unfortunately, long times ({approximately}150 hours) were required to thoroughly density the tubes. An objective of the current investigation was to optimize the forced CVI process so that composite tubes could be fabricated in much shorter times. To aid in such optimization, a computer code which models the CVI process was used to identify critical process parameters. Finally, successful demonstration of the utility of composite tubes for these applications will require the testing of near-full scale components. As a result a new infiltration system was designed and constructed to prepare 10-cm diameter tubes, and is described in this report.

  7. Aerosol assisted chemical vapor deposition using nanoparticle precursors: a route to nanocomposite thin films.

    Science.gov (United States)

    Palgrave, Robert G; Parkin, Ivan P

    2006-02-01

    Gold nanoparticle and gold/semiconductor nanocomposite thin films have been deposited using aerosol assisted chemical vapor deposition (CVD). A preformed gold colloid in toluene was used as a precursor to deposit gold films onto silica glass. These nanoparticle films showed the characteristic plasmon absorption of Au nanoparticles at 537 nm, and scanning electron microscopic (SEM) imaging confirmed the presence of individual gold particles. Nanocomposite films were deposited from the colloid concurrently with conventional CVD precursors. A film of gold particles in a host tungsten oxide matrix resulted from co-deposition with [W(OPh)(6)], while gold particles in a host titania matrix resulted from co-deposition with [Ti(O(i)Pr)(4)]. The density of Au nanoparticles within the film could be varied by changing the Au colloid concentration in the original precursor solution. Titania/gold composite films were intensely colored and showed dichromism: blue in transmitted light and red in reflected light. They showed metal-like reflection spectra and plasmon absorption. X-ray photoelectron spectroscopy and energy-dispersive X-ray analysis confirmed the presence of metallic gold, and SEM imaging showed individual Au nanoparticles embedded in the films. X-ray diffraction detected crystalline gold in the composite films. This CVD technique can be readily extended to produce other nanocomposite films by varying the colloids and precursors used, and it offers a rapid, convenient route to nanoparticle and nanocomposite thin films. PMID:16448130

  8. Well-aligned carbon nanotube array membrane synthesized in porous alumina template by chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    A new simple approach was developed for preparing well-aligned and monodispersed carbon nanotube (CNT) array membrane within the cylindrical pores of anodic aluminum oxide (AAO) template by chemical vapor deposition (CVD). Acetylene and hydrogen were used in the CVD process with Fe-catalyzer at 700℃ under 250 Pa. Scanning electron microscope (SEM) and transmission electron microscope (TEM) were employed to characterize the resulting highly- oriented uniform hollow tube array which had a diameter of about 250 nm, a tube density of 5.3′ 108 cm-2 and a length of about 60 m m. The length and diameter of the tubes depend on the thickness and pore diameter of the template. The growth properties of the CNT array film can be achieved by controlling the structure of the template, the particle size of Fe-catalyzer, the temperature in the reactor, the flow ratio and the deposition time. The highly-oriented and uniform CNT array membrane fabricated by this simple method is very much useful in a variety of applications.

  9. Polymer Encapsulation of an Amorphous Pharmaceutical by initiated Chemical Vapor Deposition for Enhanced Stability

    Science.gov (United States)

    2016-01-01

    The usage of amorphous solids in practical applications, such as in medication, is commonly limited by the poor long-term stability of this state, because unwanted crystalline transitions occur. In this study, three different polymeric coatings are investigated for their ability to stabilize amorphous films of the model drug clotrimazole and to protect against thermally induced transitions. For this, drop cast films of clotrimazole are encapsulated by initiated chemical vapor deposition (iCVD), using perfluorodecyl acrylate (PFDA), hydroxyethyl methacrylate (HEMA), and methacrylic acid (MAA). The iCVD technique operates under solvent-free conditions at low temperatures, thus leaving the solid state of the encapsulated layer unaffected. Optical microscopy and X-ray diffraction data reveal that at ambient conditions of about 22 °C, any of these iCVD layers extends the lifetime of the amorphous state significantly. At higher temperatures (50 or 70 °C), the p-PFDA coating is unable to provide protection, while the p-HEMA and p-MAA strongly reduce the crystallization rate. Furthermore, p-HEMA and p-MAA selectively facilitate a preferential alignment of clotrimazole and, interestingly, even suppress crystallization upon a temporary, rapid temperature increase (3 °C/min, up to 150 °C). The results of this study demonstrate how a polymeric coating, synthesized directly on top of an amorphous phase, can act as a stabilizing agent against crystalline transitions, which makes this approach interesting for a variety of applications. PMID:27467099

  10. Raman mapping investigation of chemical vapor deposition-fabricated twisted bilayer graphene with irregular grains.

    Science.gov (United States)

    Chen, Yuming; Meng, Lijuan; Zhao, Weiwei; Liang, Zheng; Wu, Xing; Nan, Haiyan; Wu, Zhangting; Huang, Shan; Sun, Litao; Wang, Jinlan; Ni, Zhenhua

    2014-10-21

    Bilayer graphene as a prototype of two-dimensional stacked material has recently attracted great attention. The twist angle between graphene layers adds another dimension to control its properties. In this study, we used Raman mapping to investigate the twist angle dependence of properties of twisted bilayer graphene (TBG) with irregular grains that was fabricated by chemical vapor deposition (CVD). Different Raman parameters including intensity, width, and position of G and 2D peaks were used to distinguish TBG with different twist angles. The statistical results from Raman imaging on the distribution of twist angle are consistent with the results from selected area election diffraction (SAED). Finally, the Raman peak at approximately 1347 cm(-1) for TBG with a large twist angle was assigned to the D-like peak, although it has similar excitation energy dependence of frequency as the defect-induced D peak. Theoretical calculation further confirmed that vacancy-like defect is not favored in the formation energy for TBG with a large twist angle as compared to monolayer graphene or TBG with other twist angles. These results will help to advance the understanding of TBG properties, especially for CVD samples with irregular grains.

  11. What are the active carbon species during graphene chemical vapor deposition growth?

    Science.gov (United States)

    Shu, Haibo; Tao, Xiao-Ming; Ding, Feng

    2015-02-01

    The dissociation of carbon feedstock is a crucial step for understanding the mechanism of graphene chemical vapor deposition (CVD) growth. Using first-principles calculations, we performed a comprehensive theoretical study for the population of various active carbon species, including carbon monomers and various radicals, CHi (i = 1, 2, 3, 4), on four representative transition-metal surfaces, Cu(111), Ni(111), Ir(111) and Rh(111), under different experimental conditions. On the Cu surface, which is less active, the population of CH and C monomers at the subsurface is found to be very high and thus they are the most important precursors for graphene CVD growth. On the Ni surface, which is more active than Cu, C monomers at the subsurface dominate graphene CVD growth under most experimental conditions. In contrast, on the active Ir and Rh surfaces, C monomers on the surfaces are found to be very stable and thus are the main precursors for graphene growth. This study shows that the mechanism of graphene CVD growth depends on the activity of catalyst surfaces and the detailed graphene growth process at the atomic level can be controlled by varying the temperature or partial pressure of hydrogen.

  12. Synthesis of high performance ceramic fibers by chemical vapor deposition for advanced metallics reinforcing

    Science.gov (United States)

    Revankar, Vithal; Hlavacek, Vladimir

    1991-01-01

    The chemical vapor deposition (CVD) synthesis of fibers capable of effectively reinforcing intermetallic matrices at elevated temperatures which can be used for potential applications in high temperature composite materials is described. This process was used due to its advantage over other fiber synthesis processes. It is extremely important to produce these fibers with good reproducible and controlled growth rates. However, the complex interplay of mass and energy transfer, blended with the fluid dynamics makes this a formidable task. The design and development of CVD reactor assembly and system to synthesize TiB2, CrB, B4C, and TiC fibers was performed. Residual thermal analysis for estimating stresses arising form thermal expansion mismatch were determined. Various techniques to improve the mechanical properties were also performed. Various techniques for improving the fiber properties were elaborated. The crystal structure and its orientation for TiB2 fiber is discussed. An overall view of the CVD process to develop CrB2, TiB2, and other high performance ceramic fibers is presented.

  13. Impedance spectroscopy of manganite films prepared by metalorganic chemical vapor deposition.

    Science.gov (United States)

    Nakamura, Toshihiro; Homma, Kohei; Tachibana, Kunihide

    2011-09-01

    Polycrystalline Pr(1-x)CaxMnO3 (PCMO) films were prepared by liquid source metalorganic chemical vapor deposition using in situ infrared spectroscopic monitoring. The electric properties of the PCMO-based devices with Ni and Al electrodes (Ni-PCMO-Ni and Al-PCMO-Al devices) were studied by dc current-voltage (I-V) measurements and ac impedance spectroscopy. The current varied linearly with the applied voltage in Ni-PCMO-Ni devices, while nonlinear behavior was observed in I-V curves for Al-PCMO-Al devices. Impedance spectra were also different between Ni-PCMO-Ni and Al-PCMO-Al devices. The Cole-Cole plots for the Ni-PCMO-Ni devices showed only a single semicircular arc, which was assigned to the PCMO bulk impedance. Impedance spectra for the Al-PCMO-Al devices had two distinct components, which could be attributed to the PCMO bulk and to the interface between the PCMO film and the Al electrode, respectively. The bias dependence of the impedance spectra suggested that the resistance switching in the Al-PCMO-Al devices was mainly due to the resistance change in the interface between the film and the electrode. The metal electrode plays an important role in the resistance switching in the PCMO-based devices. The choice of the optimum metal electrodes is essential to the ReRAM application of the manganite-based devices.

  14. Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

    Directory of Open Access Journals (Sweden)

    Sandipan Pramanik

    2013-09-01

    Full Text Available Current-perpendicular-to-plane (CPP magnetoresistance (MR effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explore another class of artificial layered structure in which multilayer graphene (MLG is grown on a metallic substrate by chemical vapor deposition (CVD. We show that depending on the nature of the graphene-metal interaction, these devices can also exhibit large CPP-MR. Magnetoresistance ratios (>100% are at least two orders of magnitude higher than “transferred” graphene and graphitic samples reported in the literature, for a comparable temperature and magnetic field range. This effect is unrelated to spin injection and transport and is not adequately described by any of the MR mechanisms known to date. The simple fabrication process, large magnitude of the MR and its persistence at room temperature make this system an attractive candidate for magnetic field sensing and data storage applications and, also, underscore the need for further fundamental investigations on graphene-metal interactions.

  15. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.

    2013-04-01

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

  16. Probing weak localization in chemical vapor deposition graphene wide constriction using scanning gate microscopy

    Science.gov (United States)

    Chuang, C.; Matsunaga, M.; Liu, F.-H.; Woo, T.-P.; Aoki, N.; Lin, L.-H.; Wu, B.-Y.; Ochiai, Y.; Liang, C.-T.

    2016-02-01

    Low-temperature scanning gate microscopy (LT-SGM) studies of graphene allow one to obtain important spatial information regarding coherent transport such as weak localization (WL) and universal conductance fluctuations. Although fascinating LT-SGM results on pristine graphene prepared by mechanical exfoliation have been reported in the literature, there appears to be a dearth of LT-SGM results on chemical vapor deposition (CVD)-grown graphene whose large scale and flexible substrate transferability make it an ideal candidate for coherent electronic applications. To this end, we have performed LT-SGM studies on CVD-grown graphene wide constriction (0.8 μm), which can be readily prepared by cost-effective optical lithography fully compatible with those in wafer foundry, in the WL regime. We find that the movable local gate can sensitively modulate the total conductance of the CVD graphene constriction possibly due to the intrinsic grain boundaries and merged domains, a great advantage for applications in coherent electronics. Moreover, such a conductance modulation by LT-SGM provides an additional, approximately magnetic-field-independent probe for studying coherent transport such as WL in graphene and spatial conductance variation.

  17. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    Science.gov (United States)

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  18. Experimental study of flow and heat transfer in a rotating chemical vapor deposition reactor

    Science.gov (United States)

    Wong, Sun

    An experimental model was set up to study the rotating vertical impinging chemical vapor deposition reactor. Deposition occurs only when the system has enough thermal energy. Therefore, understanding the fluid characteristic and heat transfer of the system will provide a good basis to understand the full model. Growth rate and the uniformity of the film are the two most important factors in CVD process and it is depended on the flow and thermal characteristic within the system. Optimizing the operating parameters will result in better growth rate and uniformity. Operating parameters such as inflow velocity, inflow diameter and rotational speed are used to create different design simulations. Fluid velocities and various temperatures are recorded to see the effects of the different operating parameters. Velocities are recorded by using flow meter and hot wire anemometer. Temperatures are recorded by using various thermocouples and infrared thermometer. The result should provide a quantitative basis for the prediction, design and optimization of the system and process for design and fabrication of future CVD reactors. Further assessment of the system results will be discuss in detail such as effects of buoyancy and effects of rotation. The experimental study also coupled with a numerical study for further validation of both model. Comparisons between the two models are also presented.

  19. Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes.

    Science.gov (United States)

    Tan, Haijie; Fan, Ye; Zhou, Yingqiu; Chen, Qu; Xu, Wenshuo; Warner, Jamie H

    2016-08-23

    In this report, graphene (Gr) is used as a 2D electrode and monolayer WS2 as the active semiconductor in ultrathin photodetector devices. All of the 2D materials are grown by chemical vapor deposition (CVD) and thus pose as a viable route to scalability. The monolayer thickness of both electrode and semiconductor gives these photodetectors ∼2 nm thickness. We show that graphene is different to conventional metal (Au) electrodes due to the finite density of states from the Dirac cones of the valence and conduction bands, which enables the photoresponsivity to be modulated by electrostatic gating and light input control. We demonstrate lateral Gr-WS2-Gr photodetectors with photoresponsivities reaching 3.5 A/W under illumination power densities of 2.5 × 10(7) mW/cm(2). The performance of monolayer WS2 is compared to bilayer WS2 in photodetectors and we show that increased photoresponsivity is achieved in the thicker bilayer WS2 crystals due to increased optical absorption. This approach of incorporating graphene electrodes in lateral TMD based devices provides insights on the contact engineering in 2D optoelectronics, which is crucial for the development of high performing ultrathin photodetector arrays for versatile applications. PMID:27440384

  20. Hydrogen-free spray pyrolysis chemical vapor deposition method for the carbon nanotube growth: Parametric studies

    Energy Technology Data Exchange (ETDEWEB)

    Ionescu, Mihnea Ioan; Zhang Yong; Li Ruying [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON. N6A 5B9 (Canada); Sun Xueliang, E-mail: xsun@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON. N6A 5B9 (Canada); Abou-Rachid, Hakima; Lussier, Louis-Simon [Defense Research and Development Canada - Valcartier, 2459 Boulevard Pie-XI Nord, Quebec, QC. G3J 1X5 (Canada)

    2011-05-15

    Spray pyrolysis chemical vapor deposition (CVD) in the absence of hydrogen at low carrier gas flow rates has been used for the growth of carbon nanotubes (CNTs). A parametric study of the carbon nanotube growth has been conducted by optimizing various parameters such as temperature, injection speed, precursor volume, and catalyst concentration. Experimental observations and characterizations reveal that the growth rate, size and quality of the carbon nanotubes are significantly dependent on the reaction parameters. Scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy techniques were employed to characterize the morphology, structure and crystallinity of the carbon nanotubes. The synthesis process can be applied to both semiconducting silicon wafer and conducting substrates such as carbon microfibers and stainless steel plates. This approach promises great potential in building various nanodevices with different electron conducting requirements. In addition, the absence of hydrogen as a carrier gas and the relatively low synthesis temperature (typically 750 deg. C) qualify the spray pyrolysis CVD method as a safe and easy way to scale up the CNT growth, which is applicable in industrial production.

  1. Delta-doping of boron atoms by photoexcited chemical vapor deposition

    International Nuclear Information System (INIS)

    Boron delta-doped structures in Si crystals were fabricated by means of photoexcited chemical vapor deposition (CVD). Core electronic excitation with high-energy photons ranging from vacuum ultraviolet to soft x rays decomposes B2H6 molecules into fragments. Combined with in situ monitoring by spectroscopic ellipsometry, limited number of boron hydrides can be delivered onto a Si(100) surface by using the incubation period before the formation of a solid boron film. The boron-covered surface is subsequently embedded in a Si cap layer by Si2H6 photo-excited CVD. The crystallinity of the Si cap layer depended on its thickness and the substrate temperature. The evaluation of the boron depth profile by secondary ion mass spectroscopy revealed that boron atoms were confined within the delta-doped layer at a concentration of 2.5 x 1020 cm-3 with a full width at half maximum of less than 9 nm, while the epitaxial growth of a 130-nm-thick Si cap layer was sustained at 420 deg. C.

  2. Growth temperature dependence of partially Fe filled MWCNT using chemical vapor deposition

    Science.gov (United States)

    Sengupta, Joydip; Jacob, Chacko

    2009-12-01

    This investigation deals with the effect of growth temperature on the growth behavior of Fe filled multi-walled carbon nanotubes (MWCNTs). Carbon nanotube (CNT) synthesis was carried out in a thermal chemical vapor deposition (CVD) reactor in the temperature range 650-950 °C using propane as the carbon source, Fe as the catalyst material, and Si as the catalyst support. Atomic force microscopy (AFM) analysis of the catalyst exhibits that at elevated temperature clusters of catalyst coalesce and form macroscopic islands. Field emission scanning electron microscopy (FESEM) results show that with increased growth temperature the average diameter of the nanotubes increases but their density decreases. High-resolution transmission electron microscopy (HRTEM) studies suggest that the nanotubes have multi-walled structure with partial Fe filling for all growth temperatures. The X-ray diffraction (XRD) pattern of the grown materials indicates that they are graphitic in nature. The characterization of nanotubes by Raman spectroscopy reveals that the optimized growth temperature for Fe filled CNTs is 850 °C, in terms of quality. A simple model for the growth of Fe filled carbon nanotubes is proposed.

  3. Hydrogen-free spray pyrolysis chemical vapor deposition method for the carbon nanotube growth: Parametric studies

    International Nuclear Information System (INIS)

    Spray pyrolysis chemical vapor deposition (CVD) in the absence of hydrogen at low carrier gas flow rates has been used for the growth of carbon nanotubes (CNTs). A parametric study of the carbon nanotube growth has been conducted by optimizing various parameters such as temperature, injection speed, precursor volume, and catalyst concentration. Experimental observations and characterizations reveal that the growth rate, size and quality of the carbon nanotubes are significantly dependent on the reaction parameters. Scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy techniques were employed to characterize the morphology, structure and crystallinity of the carbon nanotubes. The synthesis process can be applied to both semiconducting silicon wafer and conducting substrates such as carbon microfibers and stainless steel plates. This approach promises great potential in building various nanodevices with different electron conducting requirements. In addition, the absence of hydrogen as a carrier gas and the relatively low synthesis temperature (typically 750 deg. C) qualify the spray pyrolysis CVD method as a safe and easy way to scale up the CNT growth, which is applicable in industrial production.

  4. Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

    Science.gov (United States)

    Rosenow, Phil; Tonner, Ralf

    2016-05-01

    The extent of hydrogen coverage of the Si(001) c(4 × 2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional. The temperature dependence of the coverage in thermodynamic equilibrium was studied computing the phonon spectrum in a supercell approach. As an approximation to these demanding computations, an interpolated phonon approach was found to give comparable accuracy. The simpler ab initio thermodynamic approach is not accurate enough for the system studied, even if corrections by the Einstein model for surface vibrations are considered. The on-set of H2 desorption from the fully hydrogenated surface is predicted to occur at temperatures around 750 K. Strong changes in hydrogen coverage are found between 1000 and 1200 K in good agreement with previous reflectance anisotropy spectroscopy experiments. These findings allow a rational choice for the surface state in the computational treatment of chemical reactions under typical metal organic vapor phase epitaxy conditions on Si(001).

  5. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Foronda, Humberto M.; Laurent, Matthew A.; Yonkee, Benjanim; Keller, Stacia; DenBaars, Steven P.; Speck, James S.

    2016-08-01

    Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18× increase in growth rate and efficiency of AlN films: from 0.04 μm h-1 to 0.73 μm h-1, and 26 μm mol-1 to 502 μm mol-1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.

  6. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  7. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  8. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Amani, Matin; Burke, Robert A; Ji, Xiang; Zhao, Peida; Lien, Der-Hsien; Taheri, Peyman; Ahn, Geun Ho; Kirya, Daisuke; Ager, Joel W; Yablonovitch, Eli; Kong, Jing; Dubey, Madan; Javey, Ali

    2016-07-26

    One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5-10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2.

  9. Behavior of incorporated nitrogen in plasma-nitrided silicon oxide formed by chemical vapor deposition

    Science.gov (United States)

    Shinoda, Nao; Itokawa, Hiroshi; Fujitsuka, Ryota; Sekine, Katsuyuki; Onoue, Seiji; Tonotani, Junichi

    2016-04-01

    The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in plasma-nitrided SiO2 were investigated for different subsequent processes. N-Si3, N-Si2O, and N2 are formed in a SiO2 film by plasma nitridation. N2 molecules diffuse out during annealing at temperatures higher than 900 °C. NH species are generated from N2 molecules and H in the SiO2 film with subsequent oxide deposition using O3 as an oxidant. The capacitance-voltage (C-V) curves of metal-oxide-semiconductor (MOS) capacitors are obtained. The negative shift of the C-V curve is caused by the increase in the density of positive fix charge traps in CVD-SiO2 induced by plasma nitridation. The C-V curve of plasma-nitrided SiO2 subjected to annealing shifts to the positive direction and that subjected to the subsequent oxide deposition shifts markedly to the negative direction. It is clarified that the density of positive charge fixed traps in plasma-nitrided SiO2 films decrease because the amount of N2 molecules is decreased by annealing, and that the density of traps increases because NH species are generated and move to the interface between SiO2 and the Si substrate with the subsequent oxide deposition.

  10. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  11. Controllable Growth of the Graphene from Millimeter-Sized Monolayer to Multilayer on Cu by Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Jinyang; Huang, Zhigao; Lai, Fachun; Lin, Limei; Xu, Yangyang; Zuo, Chuandong; Zheng, Weifeng; Qu, Yan

    2015-11-01

    As is well established, mastery to precise control of the layer number, stacking order of graphene, and the size of single-crystal monolayer graphene is very important for both fundamental interest and practical applications. In this report, millimeter-sized single-crystal monolayer graphene has been synthesized to multilayer graphene on Cu by chemical vapor deposition. The relationship of the growth process between monolayer graphene and multilayer graphene is investigated carefully. Besides the general multilayer graphene with Bernal stacking order, parts of multilayer graphene with non-Bernal stacking order were modulated under optimized growth conditions. The oxide nanoparticle on the Cu surface derived from annealing has been found to play the key role in nucleation. In addition, the hydrogen concentration impacts significantly on the layer number and shape of the graphene. Moreover, a possible mechanism was proposed to understand the growth process discussed above, which may provide an instruction to graphene growth on Cu by chemical vapor deposition.

  12. A hot-wire chemical vapor deposition (HWCVD) method for metal oxide and their alloy nanowire arrays

    International Nuclear Information System (INIS)

    A concept for synthesizing nanowire arrays of transition metal oxides and their alloys using hot wire chemical vapor deposition (HWCVD) is discussed. Here, unlike conventional HWCVD, the hot filaments act as the source of the metal for the synthesis of one dimensional nanostructures. In the present concept, the chemical vapor transport of metal oxides generated by heating the filaments in low amounts of oxygen, onto substrates maintained at lower temperatures leads to the formation of metal oxide nanowires. Experiments performed using tungsten and molybdenum filaments showed that the nucleation density of the resulting metal oxide nanowires could be varied by varying the substrate temperature. Experiments performed using a magnesium source inside the reactor, in addition to tungsten filaments, resulted in the formation of MgWO4 nanowires. This clearly indicates the possibility of either doping the metal oxide nanowires or alloying during synthesis.

  13. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  14. Highly vibrationally excited CO generated in a low-temperature chemical reaction between carbon vapor and molecular oxygen

    Science.gov (United States)

    Jans, E.; Frederickson, K.; Yurkovich, M.; Musci, B.; Rich, J. W.; Adamovich, I. V.

    2016-08-01

    A chemical flow reactor is used to study the vibrational population distribution of CO produced by a reaction between carbon vapor generated in an arc discharge and molecular oxygen. The results demonstrate formation of highly vibrationally excited CO, up to vibrational level v = 14, at low temperatures, T = 400-450 K, with population inversion at v = 4-7, in a collision-dominated environment, 15-20 Torr. The average vibrational energy per CO molecule formed by the reaction is 0.6-1.2 eV/molecule, which corresponds to 10-20% of reaction enthalpy. The results show feasibility of development of a new CO chemical laser using carbon vapor and oxygen as reactants.

  15. Energy Efficient Catalytic Activation of Hydrogen peroxide for Green Chemical Processes: Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Terrence J.; Horwitz, Colin

    2004-11-12

    A new, highly energy efficient approach for using catalytic oxidation chemistry in multiple fields of technology has been pursued. The new catalysts, called TAML® activators, catalyze the reactions of hydrogen peroxide and other oxidants for the exceptionally rapid decontamination of noninfectious simulants (B. atrophaeus) of anthrax spores, for the energy efficient decontamination of thiophosphate pesticides, for the facile, low temperature removal of color and organochlorines from pulp and paper mill effluent, for the bleaching of dyes from textile mill effluents, and for the removal of recalcitrant dibenzothiophene compounds from diesel and gasoline fuels. Highlights include the following: 1) A 7-log kill of Bacillus atrophaeus spores has been achieved unambiguously in water under ambient conditions within 15 minutes. 2) The rapid total degradation under ambient conditions of four thiophosphate pesticides and phosphonate degradation intermediates has been achieved on treatment with TAML/peroxide, opening up potential applications of the decontamination system for phosphonate structured chemical warfare agents, for inexpensive, easy to perform degradation of stored and aged pesticide stocks (especially in Africa and Asia), for remediation of polluted sites and water bodies, and for the destruction of chemical warfare agent stockpiles. 3) A mill trial conducted in a Pennsylvanian bleached kraft pulp mill has established that TAML catalyst injected into an alkaline peroxide bleach tower can significantly lower color from the effluent stream promising a new, more cost effective, energy-saving approach for color remediation adding further evidence of the value and diverse engineering capacity of the approach to other field trials conducted on effluent streams as they exit the bleach plant. 4) Dibenzothiophenes (DBTs), including 4,6-dimethyldibenzothiophene, the most recalcitrant sulfur compounds in diesel and gasoline, can be completely removed from model gasoline

  16. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    Science.gov (United States)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  17. Growth of thick MgB{sub 2} films by impinging-jet hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lamborn, D.R. [Department of Chemical Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Wilke, R.H.T.; Li, Q. [Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Xi, X. [Department of Physics, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States); Snyder, D.W. [Applied Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States)

    2008-01-18

    Thick MgB{sub 2} films are grown using a novel impinging-jet hybrid physical-chemical vapor deposition process. An increased amount of the boron source gas generates high growth rates. Superconducting properties of the thick films are comparable to previous results from other processes, which indicate that this is a promising new process for MgB{sub 2} deposition for coated conductor applications, such as wires and tapes for MRI magnets. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  18. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  19. Stable dropwise condensation for enhancing heat transfer via the initiated chemical vapor deposition (iCVD) of grafted polymer films.

    Science.gov (United States)

    Paxson, Adam T; Yagüe, Jose L; Gleason, Karen K; Varanasi, Kripa K

    2014-01-22

    Ultra-thin copolymer films are deposited by initiated chemical deposition (iCVD) to investigate their performance under the condensation of water vapor. By forming a grafted interface between the coating and the substrate, the films exhibit stable dropwise condensation even when subjected to 100 °C steam. The applicability of the iCVD to complex substrate geometries is demonstrated on a copper condenser coil.

  20. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

    OpenAIRE

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; Sark, W.G.J.H.M. van; Rath, J.K.; R. E. I. Schropp

    2011-01-01

    Crystalline silicon surface passivation by amorphous silicon deposited by three different chemical vapor deposition (CVD) techniques at low (T ∼ 130 °C) temperatures is compared. For all three techniques, surface recombination velocities (SRVs) are reduced by two orders of magnitude after prolonged thermal annealing at 200 °C. This reduction correlates with a decreased dangling bond density at the amorphous-crystalline interface, indicating that dangling bond saturation is the predominant mec...

  1. Formation of Graphene Grain Boundaries on Cu(100) Surface and a Route Towards Their Elimination in Chemical Vapor Deposition Growth

    OpenAIRE

    Qinghong Yuan; Guangyao Song; Deyan Sun; Feng Ding

    2014-01-01

    Grain boundaries (GBs) in graphene prepared by chemical vapor deposition (CVD) greatly degrade the electrical and mechanical properties of graphene and thus hinder the applications of graphene in electronic devices. The seamless stitching of graphene flakes can avoid GBs, wherein the identical orientation of graphene domain is required. In this letter, the graphene orientation on one of the most used catalyst surface — Cu(100) surface, is explored by density functional theory (DFT) calculatio...

  2. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    International Nuclear Information System (INIS)

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of ∼ 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  3. Water vapor-controlled thermal plasma chemical vapor deposition of double-layered TiN/PSZ coatings on Si and WC-Co substrates

    International Nuclear Information System (INIS)

    Double-layer TiN/PSZ film coatings were deposited on Si wafers and WC-Co cutting tools from Ti-, Zr-, and Y-alkoxide solutions by thermal plasma chemical vapor deposition (CVD) containing water vapor. The partially stabilized zirconia (PSZ) layer was coated on a TiN film by oxidation of Zr- and Y-alkoxides with H2O supplied by both constant and step-wise methods. Double-layer TiN/PSZ coatings deposited on Si wafers and WC-Co by the two H2O supply methods were approximately 2 μm thick. TEM observation showed that the interface between the TiN and PSZ in the double-layer TiN/PSZ formed by the step-wise H2O supply is more adhesive than under constant H2O supply. Double-layer TiN/PSZ films coated on WC-Co substrates by the step-wise supply exhibited good crater wear resistance, comparable to a commercial double-layer TiN/Al2O3 coating by thermal CVD.

  4. Water vapor-controlled thermal plasma chemical vapor deposition of double-layered TiN/PSZ coatings on Si and WC-Co substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sakamoto, Takanori [Graduate School of Engineering, Hokkaido University, West-8, North-13, Kita-ku, Sapporo 060-8628 (Japan); Shimada, Shiro, E-mail: shimashi@eng.hokudai.ac.jp [Graduate School of Engineering, Hokkaido University, West-8, North-13, Kita-ku, Sapporo 060-8628 (Japan); Kiyono, Hajime [Graduate School of Engineering, Hokkaido University, West-8, North-13, Kita-ku, Sapporo 060-8628 (Japan); Tsujino, Jiro [Research and Development Department, Hokkaido Electric Power Co. Ltd., 2-1, Tsuishikari, Ebetsu City 067-0033 (Japan); Yamazaki, Isao [Hokkaido Sumiden Precision Industries Ltd., 776 Naie, Sorachi-gun, Hokkaido 079-0304 (Japan)

    2010-08-25

    Double-layer TiN/PSZ film coatings were deposited on Si wafers and WC-Co cutting tools from Ti-, Zr-, and Y-alkoxide solutions by thermal plasma chemical vapor deposition (CVD) containing water vapor. The partially stabilized zirconia (PSZ) layer was coated on a TiN film by oxidation of Zr- and Y-alkoxides with H{sub 2}O supplied by both constant and step-wise methods. Double-layer TiN/PSZ coatings deposited on Si wafers and WC-Co by the two H{sub 2}O supply methods were approximately 2 {mu}m thick. TEM observation showed that the interface between the TiN and PSZ in the double-layer TiN/PSZ formed by the step-wise H{sub 2}O supply is more adhesive than under constant H{sub 2}O supply. Double-layer TiN/PSZ films coated on WC-Co substrates by the step-wise supply exhibited good crater wear resistance, comparable to a commercial double-layer TiN/Al{sub 2}O{sub 3} coating by thermal CVD.

  5. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  6. Growth of Mg-doped InN by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Khan, N.; Nepal, N.; Lin, J. Y.; Jiang, H. X.

    2007-03-01

    InN with an energy gap of ˜ 0.7 eV, has recently attracted extensive attention due to its potential applications in semiconductor devices such as light emitting diodes, lasers, and high efficiency solar cells. However the ability to grow both p-type and n-type InN is essential to realize these devices. All as grown unintentionally doped InN are n-type. The tendency of native defects in InN to form donors manifests itself severely at surfaces where high levels of electron accumulation are observed. The highly n-type conductive layer at the surface of InN films creates difficulties in the demonstration of p-type InN. Nevertheless it is important to investigate the optical and structural properties of Mg-doped InN. We report here on the growth of Mg-doped InN epilayers by metal organic chemical vapor deposition. Photoluminescence (PL) was employed to study the effects of different growth conditions of Mg-doped InN. PL studies revealed that in addition to emission peak at ˜ 0.82 eV in undoped InN layers, Mg-doped InN layers exhibit an emission peak at ˜ 0.75 eV. The peak at ˜ 0.75eV for Mg-doped InN could be related to defects generated by Mg doping in InN. Various other measurements such as Hall effect measurement, X-ray diffraction and atomic force microscopy were carried out to provide further understanding.

  7. Aerosol assisted atmospheric pressure chemical vapor deposition of silicon thin films using liquid cyclic hydrosilanes

    International Nuclear Information System (INIS)

    Silicon (Si) thin films were produced using an aerosol assisted atmospheric pressure chemical vapor deposition technique with liquid hydrosilane precursors cyclopentasilane (CPS, Si5H10) and cyclohexasilane (CHS, Si6H12). Thin films were deposited at temperatures between 300 and 500 °C, with maximum observed deposition rates of 55 and 47 nm/s for CPS and CHS, respectively, at 500 °C. Atomic force microscopic analyses of the films depict smooth surfaces with roughness of 4–8 nm. Raman spectroscopic analysis indicates that the Si films deposited at 300 °C and 350 °C consist of a hydrogenated amorphous Si (a-Si:H) phase while the films deposited at 400, 450, and 500 °C are comprised predominantly of a hydrogenated nanocrystalline Si (nc-Si:H) phase. The wide optical bandgaps of 2–2.28 eV for films deposited at 350–400 °C and 1.7–1.8 eV for those deposited at 450–500 °C support the Raman data and depict a transition from a-Si:H to nc-Si:H. Films deposited at 450 oC possess the highest photosensitivity of 102–103 under AM 1.5G illumination. Based on the growth model developed for other silanes, we suggest a mechanism that governs the film growth using CPS and CHS. - Highlights: • Si films via AA-APCVD are realized using cyclopentasilane (CPS) and cyclohexasilane (CHS). • Low activation energies of CPS and CHS allow Si thin films at low temperatures (300 °C). • High growth rates of 47–55 nm/s were obtained at 500 °C • Near device quality Si thin films with 2–3 orders of photosensitivity • Si thin films via AA-APCVD are amenable to continuous roll-to-roll manufacturing

  8. Carrier transport in undoped CdO films grown by atmospheric-pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Temperature dependent Hall effect measurements were performed for the undoped CdO films with carrier concentrations (n) ranging from 2.4 × 1019 to 2.0 × 1020 cm−3 grown on c- and r-plane sapphire substrates by the atmospheric-pressure chemical vapor deposition using Cd powder and H2O as source materials. The n dependence of the optical gap energy (Eopt) could be explained by the combination of the band gap widening due to Burstein–Moss shift and the band gap shrinkages due to the electron–electron and electron–impurity interactions. For all the films, the carrier concentrations (n) were independent of measurement temperature (T), indicating that these films were n-type degenerate semiconductors. The barrier heights at grain boundaries determined from the 1000/T-ln(μT) curves were smaller than the thermal energy at 300 K, suggesting that the grain boundary scattering plays a minor role on the carrier transport in comparison with the intra-grain scattering. The n dependence of the gradient of the μ–T curve revealed the continuous transformation of the dominant intra-grain scattering mechanism from the phonon scattering to the ionized impurity scattering with increasing n. - Highlights: • Undoped CdO films were grown on c- and r-plane sapphire substrates by CVD. • Hall effect measurements were performed for the CdO films at 83–343 K. • For many CdO films, the carrier concentration n was independent of temperature. • The grain boundary scattering plays a minor role in the CdO films. • The dominant intra-grain scattering exhibited the continuous change with n

  9. Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition

    Science.gov (United States)

    Yang, Zhengfeng; Grassi, Roberto; Freitag, Marcus; Lee, Yi-Hsien; Low, Tony; Zhu, Wenjuan

    2016-02-01

    We systematically investigate the spatial/temporal photocurrent in photodetectors and electronic transport in transistors/Hall-bar devices based on monolayer MoS2 grown by chemical vapor deposition (CVD). We found that the maximum photocurrent occurs when the laser spot is close to the metal/MoS2 contact and is tunable by the applied drain voltage, which can be explained by the modulation of the local electric field at the Schottky barrier, consistent with predictions from our quantum transport simulation. We observed that the maximum photocurrent at drain contact is much larger than the one at the source contact, and the DC currents show rectifying behavior. These phenomena can be explained by the different Schottky barrier heights at the two contacts. By measuring Hall-bar structure at various temperatures from 100 K to 400 K, we extracted the barrier heights at the source and drain contacts, separately. We found that the barrier height at drain contact is about 50 mV larger than the one at the source contact, consistent with the photocurrent and DC current observations. We measured the photocurrent at various powers, and a photoresponsivity of 3.07 mA/W was extracted at low powers. When the power increases above 20 μW, the photocurrent starts to saturate. Temporal response of the photocurrent is also dependent on the laser power. At high laser powers, photocurrent overshoot was observed. The photocurrent saturation at high powers and the overshoot in temporal photocurrent are likely due to the same mechanism: an accumulation of electrons in the channel, flattening out the band structure, since the laser spot is located near the drain contact in these measurements. These studies of photocurrents and electronic transport in CVD MoS2 highlight the importance of the contacts in the electronic/optoelectronic devices and reveal the physical mechanism of the photocurrent/electronic transport in these devices.

  10. Structure and properties of braided sleeve preforms for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Fiadzo, O.G.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Technology

    1998-04-01

    In all composites the properties and structure of the reinforcement strongly influence the performance of the material. For some composites, however, the reinforcement also affects the fabrication process itself exerting an additional, second order influence on performance. This is the case for the chemical vapor infiltration (CVI) process for fabrication of ceramic matrix composites. In this process the matrix forms progressively as a solid deposit, first onto the fiber surfaces, then onto the previous layer of deposit, ultimately growing to fill the inter-fiber porosity. The transport of reactants to the surfaces and the evolved morphology of the matrix depend on the initial reinforcement structure. This structure can vary greatly and is controlled by such factors as fiber size and cross-section, the number of filaments and amount of twist per tow or yarn, and the weave or braid architecture. Often the choice of reinforcement is based on mechanical performance analysis or on the cost and availability of the material or on the temperature stability of the fiber. Given this choice, the composite densification process--CVI--must be optimized to attain a successful material. Ceramic fiber in the form of cylindrical braided sleeve is an attractive choice for fabrication of tube-form ceramic matrix composites. Multiple, concentric layers of sleeve can be placed over a tubular mandrel, compressed and fixed with a binder to form a freestanding tube preform. This fiber architecture is different than that created by layup of plain weave cloth--the material used in most previous CVI development. This report presents the results of the investigation of CVI densification of braided sleeve preforms and the evolution of their structure and transport properties during processing.

  11. Recent achievements using chemical vapor composite silicon carbide (CVC SiC)

    Science.gov (United States)

    Goodman, William A.; Tanaka, Clifford

    2009-08-01

    This annual review documents our progress towards inexpensive mass production of silicon carbide mirrors and optical structures. Results are provided for a NASA Small Business Technology Transfer (STTR) X-Ray Mirror project. Trex partnered with the University of Alabama-Huntsville Center for Advanced Optics (UAH-CAO) to develop fabrication methods for polished cylindrical and conical chemical vapor composite (CVCTM) SiC mandrels. These mandrels are envisioned as pre-forms for the replication of fused silica x-ray optics to be eventually used in the International X-Ray Observatory (IXO). CVC SiCTM offers superior high temperature stability, thermal and mechanical performance and polishability required for this precision replication process. In this program, Trex fabricated prototype mandrels with design diameters of 10.5cm, 20cm and 45cm. UAH-CAO was Trex's university partner in this effort and worked on polishing and metrology of the unusual x-ray mandrel geometries. UAH-CAO successfully developed an innovative interferometric method for measuring the CVC SiCTM x-ray mandrels based on a precision cylindrical lens system. UAH-CAO also developed finishing and polishing methods for CVC SiCTM that utilized a Zeeko IRP200 computer controlled polishing tool. The three technologies key technologies demonstrated in this program (near net shape forming of CVC SiCTM mandrels, the x-ray mandrel metrology and free-form polishing capability on CVC SiCTM) could enable cost-effective manufacture of the x-ray mandrels required for the International X-Ray Observatory (IXO).

  12. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Highlights: ► Process parameters to control hot-wire CVD of WO3−x are categorized. ► Growth time, oxygen partial pressure, filament and substrate temperature are varied. ► Chemical and crystal structure, optical bandgap and morphology are determined. ► Oxygen partial pressure determines the deposition rate up to as high as 36 μm min−1. ► Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 × 10−6 to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390–2340 °C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min−1 in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO3−x with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 ± 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO3 with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone-shaped growth. By simultaneously influencing the surface mobility, by heating the substrates to Tsurface = 700 ± 100 °C, and the deposition rate, a very good control of the morphology of the

  13. Controllable chemical vapor deposition growth of few layer graphene for electronic devices.

    Science.gov (United States)

    Wei, Dacheng; Wu, Bin; Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2013-01-15

    Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We

  14. Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition

    Science.gov (United States)

    Hwang, Sung-Bo

    Rapid thermal chemical vapor deposition (RTCVD) is an emerging technology to utilize low thermal budgets required to grow silicon-germanium alloys in a coherent way. However, the current state-of-the-art in RTCVD technique lacks some key elements required for acceptance of RTCVD in mainstream IC fabrication. These shortcomings include adequate control of wafer temperature during processing, and sufficient understanding of the growth kinetics. This dissertation describes and discusses the temperature control in RTCVD, the growth, and characterization of silicon-germanium alloys. The RTCVD system provides very reliable temperature-measurements, for a range of 480˜820°C, based on infrared-light (1.3 or 1.55mum) absorption in the silicon wafer during the growth of silicon-germanium alloys. A wafer heat transfer model developed using the view-factor analysis is used to investigate temperature distributions with respect to lamp configurations in RTCVD system. For a precise temperature control, a neural model-based controller in single-input-single-output (SISO) system is proposed, and compared with other controllers. Silicon-germanium alloys, in various semiconductor structures including dots, have been grown by RTCVD where temperature is well-controlled by the model-based controller. The structural and chemical properties of silicon-germanium alloys are characterized by X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). The different growth characteristics dominated by a silicon-source gas are exploited, and their process models are developed with the experimental data utilizing neural networks employed the Bayesian framework to accurately describe the process behaviors such as growth rate and Ge fraction in alloys with respect to process variables (to capture the process nonlinearity). By controlling growth rate and Ge fraction, a uniform and a grading Ge profile in silicon

  15. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

    OpenAIRE

    Temple Boyer, Pierre; Jalabert, L.; Masarotto, L.; Alay, Josep Lluís; Morante i Lleonart, Joan Ramon

    2000-01-01

    Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich...

  16. The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition

    OpenAIRE

    Takuya Kuwahara; Hiroshi Ito; Kentaro Kawaguchi; Yuji Higuchi; Nobuki Ozawa; Momoji Kubo

    2015-01-01

    Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH3 diffusion model, which is in conflict with first-principles calculation results and does not match the experimental evidence. In our model, DBs diffuse rapidly along an upper layer c...

  17. Local chemical purification of vapor generators of supercritical pressure with inhibited solution of ammonium salt of ethylenediaminetetraacetic acid

    International Nuclear Information System (INIS)

    Inhibition of boiler steel corrosion by chemical cleaning of vapor generators by EDTC ammonium salt solutions was studied. The washing solution velocity was 1.5-2.0 m/s, EDTC ammonium salt concentration of 0.5-1.0 g/l, temperature of 150-170 deg C. The best inhibition was provided by M-1, MSDA inhibitors, ''composition 3'' and by OP-10 or OP-7 surfactants in concentrations of 0.05-0.06 g/l each. Advanced technology of local chemical cleaning is proposed

  18. Photo-induced properties of thin TiO2 films deposited using the radio frequency plasma enhanced chemical vapor deposition method

    International Nuclear Information System (INIS)

    Thin titanium oxide films were deposited with the help of radio frequency plasma enhanced chemical vapor deposition technique. The RF power of deposition was applied as the operational parameter of the process, and optical properties, transmittance in particular, of the films were utilized as criterion for their selection. Photo-induced properties of the films, including a change of water wettability under the effect of illumination and photocatalytic activity, were studied. A substantial decrease of water contact angle was observed upon the irradiation of the films with ultraviolet (UV) light. The largest increase of water wettability was obtained for the surfaces of the films exhibiting the highest value of index of refraction. Testing of the photo-catalytic activity of the titanium oxide films comprised UV light-induced decomposition of benzene and aniline dissolved in water and bactericidal action against the Escherichia coli strain DH5α. The largest bactericidal efficiency was observed in the case of the film characterized by the highest index of refraction. Auger Electron Spectroscopy measurements have shown that the film composition is that of a nearly stoichiometric TiO2, with a small chlorine contamination

  19. Preparation of photocatalytic Fe 2O 3-TiO 2 coatings in one step by metal organic chemical vapor deposition

    Science.gov (United States)

    Zhang, Xingwang; Lei, Lecheng

    2008-02-01

    There are two major difficulties in the TiO 2 liquid-solid photocatalytic system: effective immobilization of the TiO 2 particles; and improving the catalytic activity under visible light. To simultaneously solve these two problems, Fe 2O 3-TiO 2 coatings supported on activated carbon fiber (ACF), have been prepared in one step by a convenient and efficient method—metal organic chemical vapor deposition (MOCVD). XRD results revealed that Fe 2O 3-TiO 2 coatings mainly composed of anatase TiO 2, α-Fe 2O 3 phases and little Fe 2Ti 3O 9. The pore structure of ACF was preserved well after loading with Fe 2O 3-TiO 2 coatings. UV-vis diffuse reflectance spectra showed a slight shift to longer wavelengths and an enhancement of the absorption in the visible region for Fe 2O 3-TiO 2 coatings, compared to the pure TiO 2 sample. A moderate Fe 2O 3-TiO 2 loading (13.7 wt%) was beneficial to mineralizing wastewater because the intermediates could be adsorbed onto the surface of photocatalyst following decomposition. The stable performance revealed that the Fe 2O 3-TiO 2 coatings were strongly adhered to the ACF surface, and the as prepared catalysts could be reused showing potential application for wastewater treatment.

  20. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  1. Transport of Chemical Vapors from Subsurface Sources to Atmosphere as Affected by Shallow Subsurface and Atmospheric Conditions

    Science.gov (United States)

    Rice, A. K.; Smits, K. M.; Hosken, K.; Schulte, P.; Illangasekare, T. H.

    2012-12-01

    Understanding the movement and modeling of chemical vapor through unsaturated soil in the shallow subsurface when subjected to natural atmospheric thermal and mass flux boundary conditions at the land surface is of importance to applications such as landmine detection and vapor intrusion into subsurface structures. New, advanced technologies exist to sense chemical signatures at the land/atmosphere interface, but interpretation of these sensor signals to make assessment of source conditions remains a challenge. Chemical signatures are subject to numerous interactions while migrating through the unsaturated soil environment, attenuating signal strength and masking contaminant source conditions. The dominant process governing movement of gases through porous media is often assumed to be Fickian diffusion through the air phase with minimal or no quantification of other processes contributing to vapor migration, such as thermal diffusion, convective gas flow due to the displacement of air, expansion/contraction of air due to temperature changes, temporal and spatial variations of soil moisture and fluctuations in atmospheric pressure. Soil water evaporation and interfacial mass transfer add to the complexity of the system. The goal of this work is to perform controlled experiments under transient conditions of soil moisture, temperature and wind at the land/atmosphere interface and use the resulting dataset to test existing theories on subsurface gas flow and iterate between numerical modeling efforts and experimental data. Ultimately, we aim to update conceptual models of shallow subsurface vapor transport to include conditionally significant transport processes and inform placement of mobile sensors and/or networks. We have developed a two-dimensional tank apparatus equipped with a network of sensors and a flow-through head space for simulation of the atmospheric interface. A detailed matrix of realistic atmospheric boundary conditions was applied in a series of

  2. Preliminary Study on the Vaporization Ratio of the Slurry in the Residue Fluid Catalytic Cracking Disengager%RFCC沉降器内油浆气化率的初步研究

    Institute of Scientific and Technical Information of China (English)

    闫平祥; 蓝兴英; 徐春明; 高金森

    2007-01-01

    The vaporization ratios of the slurry at various temperature and partial pressure were calculated with the group-contribution method, and then the phase state of the slurry in the residue fluid catalytic cracking (RFCC) disengager was determined.This research could provide some advices on how to select the technological conditions to decrease the coking in the RFCC disengager.The oil gas temperature and the slurry partial pressure had significant effects on the vaporization ratio of the slurry.Increasing the oil gas temperature and reducing the slurry partial pressure could effectively slow down the coking speed in the RFCC disengager.According to the calculation results, a correlation was established to predict the vaporization ratio of the slurry under different operating conditions.

  3. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  4. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    Science.gov (United States)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  5. Chemical vapor deposition of ruthenium–phosphorus alloy thin films: Using phosphine as the phosphorus source

    Energy Technology Data Exchange (ETDEWEB)

    Bost, Daniel E.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu

    2014-05-02

    The use of PH{sub 3} as the P source in the growth of amorphous ruthenium–phosphorus (Ru(P)) alloy films by dual-source chemical vapor deposition (CVD) with Ru{sub 3}(CO){sub 12} to produce thin (∼ 3 nm) Cu diffusion barriers is examined. Comparisons are made to films grown using P(CH{sub 3}){sub 3}. Carbon contamination of 10 at.% carbon or less was observed in PH{sub 3}-produced Ru(P) films, compared to greater than 30 atomic % carbon in films using P(CH{sub 3}){sub 3}, and lower resistivity was also observed. PH{sub 3} was found to be much more reactive than previously-used P precursors, requiring the use of very low PH{sub 3} partial pressures (∼ 0.13 mPa) and a sequenced addition process that allowed accumulated P to diffuse into the Ru(P) film during growth. X-ray reflectivity and atomic force microscopy indicate that films of good continuity and smoothness can be grown by CVD in the 3 nm thickness range. X-ray diffraction shows the amorphous phase to be stable for annealing at 400 °C for 3 h. Electric field stress tests to failure for Cu/Ru(P)/SiO{sub 2}/Si stacks indicate that low-carbon Ru(P) barrier films function at least as well as their higher-carbon counterparts as Cu barriers and better than Ta/TaN stacks of similar thickness grown for comparison purposes. - Highlights: • Reports the CVD growth of 3 to 5 nm amorphous Ru(P) thin films PH{sub 3} as the P source • PH{sub 3}-grown Ru(P) films have ∼ 10% C content the same as films with zero % P. • Fast PH{sub 3} decomposition at 250 °C can lead to P accumulation on the growth surface. • Amorphous, continuous 3 nm Ru(P) films realized for P content > 20 atom % • Electrical field stress tests indicate 3 nm Ru(P) function as a Cu diffusion barrier.

  6. Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

    Science.gov (United States)

    Dey, S. K.; Wang, C.-G.; Tang, D.; Kim, M. J.; Carpenter, R. W.; Werkhoven, C.; Shero, E.

    2003-04-01

    A 4 nm layer of ZrOx (targeted x˜2) was deposited on an interfacial layer (IL) of native oxide (SiO, t˜1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 300 °C. Some as-deposited layers were subjected to a postdeposition, rapid thermal annealing at 700 °C for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-ZrO2 (t-ZrO2) and monoclinic-ZrO2 (m-ZrO2) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper SiO2-rich Zr silicate and the lower SiOx. The latter was substoichiometric and the average oxidation state increased from Si0.86+ in SiO0.43 (as-deposited) to Si1.32+ in SiO0.66 (annealed). This high oxygen deficiency in SiOx was indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor (MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multilayer nanostructure and nanochemistry that

  7. Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

    International Nuclear Information System (INIS)

    Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

  8. Model reduction and temperature uniformity control for rapid thermal chemical vapor deposition reactors

    Science.gov (United States)

    Theodoropoulou, Artemis-Georgia

    The consideration of Rapid Thermal Processing (RTP) in semiconductor manufacturing has recently been increasing. As a result, control of RTP systems has become of great importance since it is expected to help in addressing uniformity problems that, so far, have been obstructing the acceptance of the method. The spatial distribution appearing in RTP models necessitates the use of model reduction in order to obtain models of a size suitable for use in control algorithms. This dissertation addresses model reduction as well as control issues for RTP systems. A model of a three-zone Rapid Thermal Chemical Vapor Deposition (RTCVD) system is developed to study the effects of spatial wafer temperature patterns on polysilicon deposition uniformity. A sequence of simulated runs is performed, varying the lamp power profiles so that different wafer temperature modes are excited. The dominant spatial wafer thermal modes are extracted via Proper Orthogonal Decomposition and subsequently used as a set of trial functions to represent both the wafer temperature and deposition thickness. A collocation formulation of Galerkin's method is used to discretize the original modeling equations, giving a low-order model which loses little of the original, high-order model's fidelity. We make use of the excellent predictive capabilities of the reduced model to optimize power inputs to the lamp banks to achieve a desired polysilicon deposition thickness at the end of a run with minimal deposition spatial nonuniformity. Since the results illustrate that the optimization procedure benefits from the use of the reduced-order model, we further utilize the reduced order model for real time Model Based Control. The feedback controller is designed using the Internal Model Control (IMC) structure especially modified to handle systems described by ordinary differential and algebraic equations. The IMC controller is obtained using optimal control theory on singular arcs extended for multi input systems

  9. Residual stresses in chemically vapor deposited coatings in the Ti-C-N system

    International Nuclear Information System (INIS)

    Residual stresses in chemically vapor deposited monolithic and graded coatings in the Ti-C-N system were investigated as a function of substrate material and coating composition by X-ray diffraction Sin2 Ψ method. The thermal expansion coefficients (CTEs) of the graphite substrates ranged from 2.5x10-6 K-1 to 8.6x10-6 K-1. Titanium nitride (CTE 9.35x10-6 K-1) and titanium carbide (CTE 7.5x10-6 K-1) coatings deposited on the low-expansion substrates (CTEs 2.5-3.5x10-6 K-1) exhibited crack networks which accounted for low stress levels measured in the coatings. A phenomenalogical explanation of the crack patterns was given. The coatings grown on the substrates with high coefficients of thermal expansion (CTEs 7.8-8.6x10-6 K-1) had no cracks. Residual stresses in the TiN coatings on these substrates were measured to be tensile. Whereas TiC coatings always exhibited compressive stresses ranging from -54±10 MPa to -288±18 MPa. The TiCxNy coatings deposited on the substrate with a thermal expansion coefficient of 8.6x10-6 K-1 also had compressive stresses increased with increasing TiC mole fraction in the TiCxNy up to about 0.9 above which stresses decreased. The residual stresses in the top TiC layers of the graded TiN/TiC coatings with linear, parabolic and exponentional composition profiles grown on the the same substrate (CTE 8.6x10-6 K-1) were measured to be compressive and about 475 MPa. Stresses in the coatings were calculated and attributed to the thermal expansion mismatch between the coating and the substrate. It was shown that the measured stresses were, in general, found to be in good agreement with the calculated ones. (orig.)

  10. Functional carbons and carbon nanohybrids for the catalytic conversion of biomass to renewable chemicals in the condensed phase

    Energy Technology Data Exchange (ETDEWEB)

    Matthiesen, John; Hoff, Thomas; Liu, Chi; Pueschel, Charles; Rao, Radhika; Tessonnier, Jean-Philippe

    2014-06-01

    The production of chemicals from lignocellulosic biomass provides opportunities to synthesize chemicals with new functionalities and grow a more sustainable chemical industry. However, new challenges emerge as research transitions from petrochemistry to biorenewable chemistry. Compared to petrochemisty, the selective conversion of biomass-derived carbohydrates requires most catalytic reactions to take place at low temperatures (< 300°C) and in the condensed phase to prevent reactants and products from degrading. The stability of heterogeneous catalysts in liquid water above the normal boiling point represents one of the major challenges to overcome. Herein, we review some of the latest advances in the field with an emphasis on the role of carbon materials and carbon nanohybrids in addressing this challenge.

  11. Functional carbons and carbon nanohybrids for the catalytic conversion of biomass to renewable chemicals in the condensed phase

    Institute of Scientific and Technical Information of China (English)

    John Matthiesen; Thomas Hoff; Chi Liu; Charles Pueschel; Radhika Rao; Jean-Philippe Tessonnier

    2014-01-01

    The production of chemicals from lignocellulosic biomass provides opportunities to synthesize chemicals with new functionalities and grow a more sustainable chemical industry. However, new challenges emerge as research transitions from petrochemistry to biorenewable chemistry. Com-pared to petrochemisty, the selective conversion of biomass-derived carbohydrates requires most catalytic reactions to take place at low temperatures (<300 °C) and in the condensed phase to pre-vent reactants and products from degrading. The stability of heterogeneous catalysts in liquid water above the normal boiling point represents one of the major challenges to overcome. Herein, we review some of the latest advances in the field with an emphasis on the role of carbon materials and carbon nanohybrids in addressing this challenge.

  12. Effects of Atmospheric Conditions and the Land/Atmospheric Interface on Transport of Chemical Vapors from Subsurface Sources

    Science.gov (United States)

    Rice, A. K.; Smits, K. M.; Cihan, A.; Howington, S. E.; Illangasekare, T. H.

    2013-12-01

    Understanding the movement of chemical vapors and gas through variably saturated soil subjected to atmospheric thermal and mass flux boundary conditions at the land/atmospheric interface is important to many applications, including landmine detection, methane leakage during natural gas production from shale and CO2 leakage from deep geologic storage. New, advanced technologies exist to sense chemical signatures and gas leakage at the land/atmosphere interface, but interpretation of sensor signals remains a challenge. Chemical vapors are subject to numerous interactions while migrating through the soil environment, masking source conditions. The process governing movement of gases through porous media is often assumed to be Fickian diffusion through the air phase with minimal quantification of other processes, such as convective gas flow and temporal or spatial variation in soil moisture. Vapor migration is affected by atmospheric conditions (e.g. humidity, temperature, wind velocity), soil thermal and hydraulic properties and contaminant properties, all of which are physically and thermodynamically coupled. The complex coupling of two drastically different flow regimes in the subsurface and atmosphere is commonly ignored in modeling efforts, or simplifying assumptions are made to treat the systems as de-coupled. Experimental data under controlled laboratory settings are lacking to refine the theory for proper coupling and complex treatment of vapor migration through porous media in conversation with atmospheric flow and climate variations. Improving fundamental understanding and accurate quantification of these processes is not feasible in field settings due to lack of controlled initial and boundary conditions and inability to fully characterize the subsurface at all relevant scales. The goal of this work is to understand the influence of changes in atmospheric conditions to transport of vapors through variably saturated soil. We have developed a tank apparatus

  13. Microstructured Films Formed on Liquid Substrates via Initiated Chemical Vapor Deposition of Cross-Linked Polymers.

    Science.gov (United States)

    Bradley, Laura C; Gupta, Malancha

    2015-07-28

    We studied the formation of microstructured films at liquid surfaces via vapor phase polymerization of cross-linked polymers. The films were composed of micron-sized coral-like structures that originate at the liquid-vapor interface and extend vertically. The growth mechanism of the microstructures was determined to be simultaneous aggregation of the polymer on the liquid surface and wetting of the liquid on the growing aggregates. We demonstrated that we can increase the height of the microstructures and increase the surface roughness of the films by either decreasing the liquid viscosity or decreasing the polymer deposition rate. Our vapor phase method can be extended to synthesize functional, free-standing copolymer microstructured thin films for potential applications in tissue engineering, electrolyte membranes, and separations. PMID:26176742

  14. Global and local planarization of surface roughness by chemical vapor deposition of organosilicon polymer for barrier applications

    Energy Technology Data Exchange (ETDEWEB)

    Coclite, Anna Maria; Gleason, Karen K. [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2012-04-01

    Particulates and asperities on the surface of plastic substrates limit the performance of the current protective barrier coatings for flexible electronics. By applying a smoothing layer to the substrate, prior to barrier deposition, permeation is reduced. While application of smoothing layers from the liquid-phase application and curing of acrylate monomers is well known, reports of planarization achieved by vapor deposition are quite limited. In the current work, the chemical vapor deposition (CVD) of a flexible smoothing layer, requiring no curing, is implemented in the same reactor chamber and from the same organosilicon monomer used for depositing the multilayer barrier stack. The process similarity between the smoothing and barrier layer deposition steps has the potential to lower the overall cost of the process and to improve interfacial properties, such as adhesion between the smoothing layer and the barrier stack. The current methods adapts and combines features of two well established methods for CVD of organic layers, plasma enhancement (PECVD) and the specific use of an initiator species (iCVD). The novel, initiated plasma enhanced chemical vapor deposition (iPECVD) method achieves a far greater degree of planarization of flexible organic layer than either of its predecessors. Polystyrene microspheres serve as model defects and allow the degree of planarization to be quantitatively measured. Both cross-sectional scanning electron micrographs and atomic force micrographs demonstrate that when the iPECVD organic layer is 1.8 {mu}m thick, the degree of global planarization is 99%. A model demonstrates that the planarization is achieved as a result of the coating viscosity and the surface tension. Finally, the water vapor barrier performance of a 20-nm-thick SiO{sub x} layer is two orders of magnitude improved when it is deposited on a planarized substrate.

  15. TiO2 based photo-catalysts prepared by chemical vapor infiltration (CVI) on micro-fibrous substrates

    International Nuclear Information System (INIS)

    This thesis deals with micro-fibrous glass substrates functionalized with TiO2. The oxide is deposited as a thin film onto the micro fibres by chemical vapour infiltration (CVI), yielding a photo-catalytic material usable for cleaning polluted air. We studied the relation between the structure of the material and its photo-catalytic efficiency. TiO2 thin films were prepared at low pressure, in a hot-wall CVD reactor, using Ti(O-iPr)4 as a precursor. They were characterized by XRD, SEM, EDX, XPS and BET, and by recording the kinetics of decomposition of varied pollutants in solution (orange G, malic acid, imazapyr) and in air (toluene). The conditions favoring the growth of porous films through a columnar growth mode were established by MOCVD-depositing TiO2 thin films on flat substrates. The subsequent works with micro fibrous thick substrates showed the uniformity of infiltration to be the main factor governing the photo-catalytic efficiency. Operating parameters that optimize infiltration do not yield columnar growth mode. A compromise is necessary. Our photo-catalysts are showing high efficiency comparable, if not higher, to those actually commercialized. These promising results are opening real perspectives for the proposed process. (author)

  16. Semi-continuous high speed gas analysis of generated vapors of chemical warfare agents

    NARCIS (Netherlands)

    Trap, H.C.; Langenberg, J.P.

    1999-01-01

    A method is presented for the continuous analysis of generated vapors of the nerve agents soman and satin and the blistering agent sulfur mustard. By using a gas sampling valve and a very short (15 cm) column connected to an on-column injector with a 'standard length' column, the system can either b

  17. INTERACTION-MEDIATED GROWTH OF CARBON NANOTUBES ON ACICULAR SILICA-COATED α-Fe CATALYST BY CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    Qixiang Wang; Guoqing Ning; Fei Wei; Guohua Luo

    2003-01-01

    Multi-walled carbon nanotubes (MWNTs) with 20 nm outer diameter were prepared by chemical vapor deposition of ethylene using ultrafine surface-modified acicular α-Fe catalyst particles. The growth mechanism of MWNTs on the larger catalyst particles are attributed to the interaction between the Fe nanoparticles with the surface-modified silica layer. This interaction-mediated growth mechanism is illustrated by studying the electronic, atomic and crystal properties of surface-modified catalysts and MWNTs products by characterization with X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), thermal gravimetric analysis (TGA) and Raman spectra.

  18. Graphene Films: Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition (Adv. Mater. 29/2016).

    Science.gov (United States)

    Li, Xuesong; Colombo, Luigi; Ruoff, Rodney S

    2016-08-01

    Synthesis of graphene films on copper foils is discussed by X. Li, L. Colombo, and R. S. Ruoff on page 6247. Graphene can grow on metal substrates by chemical vapor deposition of hydrocarbons. Hydrocarbons crack on a metal surface, nucleate, grow, and finally merge to form a continuous graphene film. Copper is one of the best candidates for graphene growth due to the advantages of good control over the graphene thickness, the growth of high-quality graphene, and the ease for graphene transfer, and has been widely used for production of large-area graphene films in both academia and industry. PMID:27478085

  19. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-06-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  20. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Nouhi, A.; Stirn, R.J.; Meyers, P.V.; Liu, C.H.

    1989-05-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9% have been demonstrated. I--V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd/sub 0.85/Mn/sub 0.15/Te in place of CdTe as an i layer.

  1. In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    S. Nunomura

    2014-09-01

    Full Text Available The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.

  2. Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Zhangyi; SUN Zhuo; GUO Pingsheng; CHEN Yiwei

    2007-01-01

    Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM),a transmission electron microscope (TEM) and a Raman spectrometer,respectively.The effect of acetylene flow rate on the morphology and structure of CNT films was investigated.By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter perminute),the yield and the diameter of CNTs increase.Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate.

  3. Effect of MoO3 constituents on the growth of MoS2 nanosheets by chemical vapor deposition

    Science.gov (United States)

    Wang, Xuan; Zhang, Yong Ping; Qian Chen, Zhi

    2016-06-01

    The highly crystalline and uniform MoS2 film was grown on Si substrate by a low-pressure chemical vapor deposition method using S and MoO3 as precursors at an elevated temperature. The structures and properties of MoS2 nanosheets vary greatly with the content of MoO3 constituents in the films. The nanostructured MoS2 film exhibits strong photoluminescence in the visible range. This work may provide a pathway to synthesizing MoS2 nanosheets and facilitate the development of applicable devices.

  4. Hydrodynamic study of fine metallic powders in an original spouted bed contactor in view of chemical vapor deposition treatments

    OpenAIRE

    Caussat, Brigitte; Juarez, Fernando L.; Vahlas, Constantin

    2006-01-01

    An original gas–solid contactor was developed so as to treat by chemical vapor deposition, fine (mean diameter 23 μm) and dense (bulk density 7700 kg/m3) NiCoCrAlYTa powders with large size distribution. In order to avoid the presence of a distributor in the reactive zone, a spouted bed configuration was selected, consisting in a glass cylindrical column associated through a 60° cone to an inlet tube, connected at its bottom to a grid so as to support the powders at rest. A hydrodynamic study...

  5. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    Science.gov (United States)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  6. Growth of 2 um Crack-Free GaN on Si(111)Substrates by Metal Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WEI Meng; WANG Xiao-Liang; XIAO Hong-Ling; WANG Cui-Mei; PAN Xu; HOU Qi-Feng; WANG Zhan-Guo

    2011-01-01

    A 2μm high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm2/V·s to 12277cm2/V·s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition.%@@ A 2pm high quality crack-free GaN film was successfully grown on 2-inch Si(111)substrates by metal organic chemical vapor deposition with a high temperature AIN/graded-AIGaN multibuffer and an AIN/GaN superlattice interlayer.It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer.The GaN(0002)XRD FWHM of the crack-free sample is 479.8arcsec, indicating good crystal quality.An AIGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement.The electron mobility of two-dimensional electron gas increases from 1928 cm 2/V.S to 12277cm2/V s when the test-temperature decreases from room temperature to liquid nitrogen temperature.The electron mobility is comparable to that of AIGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an A]GaN/GaN/Si(111)heterostructure grown by metal organic chemical vapor deposition.

  7. Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

    International Nuclear Information System (INIS)

    By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO3) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO3, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes

  8. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  9. Low-temperature properties of β-MoTe2 grown by the chemical vapor transport method

    Science.gov (United States)

    Yu, Qiao-He; Wang, Yi-Yan; Xu, Sheng; Sun, Lin-Lin; Xia, Tian-Long

    2016-08-01

    We synthesized single crystals of β-MoTe2 by the chemical vapor transport (CVT) method. Resistivity and magnetoresistivity (MR) have been measured. The MR displays H 2 behavior at low field and linear field dependence at high field, which is different from the quadratic behavior in the sample obtained from the NaCl-flux method. It is suggested that the observed linear MR may originate from disorder. The quality and low-temperature property of β-MoTe2 clearly depend on the growth method. Moreover, the angular-dependent MR reveals the two-fold symmetry of Fermi surface.

  10. Carbon Dioxide Conversion to Valuable Chemical Products over Composite Catalytic Systems

    Energy Technology Data Exchange (ETDEWEB)

    Dagle, Robert A.; Hu, Jianli; Jones, Susanne B.; Wilcox, Wayne A.; Frye, John G.; White, J. F.; Jiang, Juyuan; Wang, Yong

    2013-05-01

    Presented is an experimental study on catalytic conversion of carbon dioxide into methanol, ethanol and acetic acid. Catalysts having different catalytic functions were synthesized and combined in different ways to enhance selectivity to desired products. The combined catalyst system possessed the following functions: methanol synthesis, Fischer-Tropsch synthesis, water-gas-shift and hydrogenation. Results showed that the methods of integrating these catalytic functions played important role in achieving desired product selectivity. It was speculated that if methanol synthesis sites were located adjacent to the C-C chain growth sites, the formation rate of C2 oxygenates would be enhanced. The advantage of using high temperature methanol catalyst PdZnAl in the combined catalyst system was demonstrated. In the presence of PdZnAl catalyst, the combined catalyst system was stable at temperature of 380oC. It was observed that, at high temperature, kinetics favored oxygenate formation. Results implied that the process can be intensified by operating at high temperature using Pd-based methanol synthesis catalyst. Steam reforming of the byproduct organics was demonstrated as a means to provide supplemental hydrogen. Preliminary process design, simulation, and economic analysis of the proposed CO2 conversion process were carried out. Economic analysis indicates how ethanol production cost was affected by the price of CO2 and hydrogen.

  11. A non-chemically selective top-down approach towards the preparation of hierarchical TS-1 zeolites with improved oxidative desulfurization catalytic performance.

    Science.gov (United States)

    Du, Shuting; Chen, Xiaoxin; Sun, Qiming; Wang, Ning; Jia, Mingjun; Valtchev, Valentin; Yu, Jihong

    2016-02-28

    Hierarchical TS-1 zeolites with secondary macropores have been successfully prepared by using two different fluoride-containing chemical etching post-treated routes. Hierarchical TS-1 zeolites exhibited a chemical composition similar to that of the parent material and showed remarkably enhanced catalytic activity in oxidative desulfurization reaction. PMID:26846586

  12. Oxidative Chemical Vapor Deposition of Neutral Hole Transporting Polymer for Enhanced Solar Cell Efficiency and Lifetime.

    Science.gov (United States)

    Jo, Won Jun; Nelson, Justin T; Chang, Sehoon; Bulović, Vladimir; Gradečak, Silvija; Strano, Michael S; Gleason, Karen K

    2016-08-01

    The concept of a neutral hole-transporting polymer is realized for the first time, by integrating patterned Cl(-) -doped poly(3,4-dimethoxythiophene) thin films into organic solar cells through a vacuum-based polymer vapor printing technique. Due to this novel polymer's neutrality, high transparency, good conductivity, and appropriate energy levels, the solar-cell efficiency and lifetime are significantly enhanced. PMID:27167214

  13. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  14. The power source effect on SiO{sub x} coating deposition by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Junfeng [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Chen Qiang, E-mail: chenqiang@bigc.edu.c [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China); Zhang Yuefei; Liu Fuping; Liu Zhongwei [Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Daxing, Beijing, 102600 (China)

    2009-05-29

    SiOx coatings were prepared by capacitively coupled plasma enhanced chemical vapor deposition on polyethyleneterephtalate substrates in 23 kHz middle-frequency and radio frequency power supplies, respectively, where hexamethyldisiloxane was used as gas source. The influences of discharge conditions on gas phase intermediate species and active radicals for SiOx formation was investigated by mass spectrometry as real-time in-situ diagnosis. The deposited SiOx coating chemical structures were also analyzed by Fourier transform infrared spectroscopy. Meanwhile, the film barrier property, oxygen transmission rate, was measured at 23 {sup o}C and 50% humidity circumstance. The better barrier property was obtained in the MF power source depositing SiOx coated PET.

  15. Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition.

    Science.gov (United States)

    Baek, Seung Hyun; Choi, Yura; Choi, Woong

    2015-12-01

    We report the largest-size thin films of uniform single-layer MoS2 on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO3 and S evaporated from solid sources. The as-grown thin films of single-layer MoS2 were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS2 clusters. Compared to mechanically exfoliated crystals, the as-grown single-layer MoS2 thin films possessed consistent chemical valence states and crystal structure along with strong photoluminescence emission and optical absorbance at high energy. These results demonstrate that it is possible to scale up the growth of uniform single-layer MoS2 thin films, providing potentially important implications on realizing high-performance MoS2 devices.

  16. Heat and Mass Transfer during Chemical Vapor Deposition on the Particle Surface Subjected to Nanosecond Laser Heating

    CERN Document Server

    Peng, Quan; He, Yaling; Mao, Yijin

    2016-01-01

    A thermal model of chemical vapor deposition of titanium nitride (TiN) on the spherical particle surface under irradiation by a nanosecond laser pulse is presented in this paper. Heat and mass transfer on a single spherical metal powder particle surface subjected to temporal Gaussian heat flux is investigated analytically. The chemical reaction on the particle surface and the mass transfer in the gas phase are also considered. The surface temperature, thermal penetration depth, and deposited film thickness under different laser fluence, pulse width, initial particle temperature, and particle radius are investigated. The effect of total pressure in the reaction chamber on deposition rate is studied as well. The particle-level model presented in this paper is an important step toward development of multiscale model of LCVI.

  17. Biased electron cyclotron resonance chemical-vapor deposition of silicon dioxide inter-metal dielectric thin films

    International Nuclear Information System (INIS)

    A low-temperature, single-step, gap-fill process has been developed for use in inter-metal dielectric (IMD) applications on wafers up to 200 mm in diameter. Sub-0.5 μm, high aspect ratio gaps were filled with high quality SiO2 dielectric on 200 mm wafers with a process suitable for use in semiconductor manufacturing. The SiO2 IMD was deposited from an O2-Ar-SiH4 gas mixture using a biased electron cyclotron resonance plasma-enhanced chemical-vapor deposition (ECR-CVD) system. This article examines the basic physical and chemical phenomena underlying this process. Film growth is shown to occur through a heterogeneous, ion-activated reaction between oxygen species streaming onto the wafer from the ECR source and silane species adsorbed on the wafer. (orig.)

  18. Role of fluorine atoms in the oxidation-hydrolysis process of plasma assisted chemical vapor deposition fluorinated silicon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O.; Gomez-Aleixandre, C.; Palacio, C. (Universidad Autonoma de Madrid (Spain))

    The oxidation and/or hydrolysis of a plasma assisted chemical vapor deposition fluorinated silicon nitride film in a moisture atmosphere has been studied. The film presents fluorine atoms incorporated as -SiF, -SiF[sub 2], -SiF[sub 3], and [-SiF[sub 2]-][sub n] groups. The open structure of the film, due to the high fluorine content as [-SiF[sub 2]-][sub n], favors the penetration of oxygen and water molecules in the network. The evolution of the film has been explained by the different reactivity of the silicon atoms depending on their chemical environment. The role of fluorine atoms incorporated into the film has been established. 12 refs., 3 figs., 1 tab.

  19. Initiated chemical vapor deposition of pH responsive poly(2-diisopropylamino)ethyl methacrylate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karaman, Mustafa, E-mail: karamanm@selcuk.edu.tr [Department of Chemical Engineering, Selcuk University (Turkey); Advanced Technology Research and Application Center, Selcuk University (Turkey); Cabuk, Nihat [Department of Chemical Engineering, Selcuk University (Turkey)

    2012-08-31

    Poly(2-(diisopropylamino)ethyl methacrylate) (PDPAEMA) thin films were deposited on low temperature substrates by initiated chemical vapor deposition (iCVD) method using tertbutyl peroxide as an initiator. Very high deposition rates up to 38 nm/min were observed at low filament temperatures due to the use of the initiator. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy show the formation of PDPAEMA films with high retention of tertiary amine functionality which is responsible for pH induced changes in the wetting behavior of the surfaces. As-deposited PDPAEMA thin films on flat Si surface showed a reversible switching of water contact angle values between 87 Degree-Sign and 28 Degree-Sign ; after successive treatments of high and low pH water solutions, respectively. Conformal and non-damaging nature of iCVD allowed to functionalize fragile and rough electrospun poly(methyl methacrylate) fiber mat surfaces by PDPAEMA, which creates a surface with a switching behavior between superhydrophobic and approaching superhydrophilic with contact angle values of 155 {+-} 3 Degree-Sign and 22 {+-} 5 Degree-Sign , respectively. - Highlights: Black-Right-Pointing-Pointer Poly(2-diisopropylaminoethyl methacrylate) thin films were deposited by a dry process. Black-Right-Pointing-Pointer Initiated chemical vapor deposition can produce thin films on fragile substrates. Black-Right-Pointing-Pointer We report a reversible pH-induced transition from hydrophilic to super-hydrophobic.

  20. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    Science.gov (United States)

    Johnston, Jamin M.; Catledge, Shane A.

    2016-02-01

    Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W2CoB2 with average hardness from 23 to 27 GPa and average elastic modulus of 600-730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  1. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  2. Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes

    Science.gov (United States)

    Weiss, Theodor; Nowak, Martin; Mundloch, Udo; Zielasek, Volkmar; Kohse-Höinghaus, Katharina; Bäumer, Marcus

    2014-10-01

    Optimizing thin film deposition techniques requires contamination-free transfer from the reactor into an ultrahigh vacuum (UHV) chamber for surface science analysis. A very compact, multifunctional Chemical Vapor Deposition (CVD) reactor for direct attachment to any typical UHV system for thin film analysis was designed and built. Besides compactness, fast, easy, and at the same time ultimately clean sample transfer between reactor and UHV was a major goal. It was achieved by a combination of sample manipulation parts, sample heater, and a shutter mechanism designed to fit all into a NW38 Conflat six-ways cross. The present reactor design is versatile to be employed for all commonly employed variants of CVD, including Atomic Layer Deposition. A demonstration of the functionality of the system is provided. First results of the setup (attached to an Omicron Multiprobe x-ray photoelectron spectroscopy system) on the temperature dependence of Pulsed Spray Evaporation-CVD of Ni films from Ni acetylacetonate as the precursor demonstrate the reactor performance and illustrate the importance of clean sample transfer without breaking vacuum in order to obtain unambiguous results on the quality of CVD-grown thin Ni films. The widely applicable design holds promise for future systematic studies of the fundamental processes during chemical vapor deposition or atomic layer deposition.

  3. Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes

    International Nuclear Information System (INIS)

    Optimizing thin film deposition techniques requires contamination-free transfer from the reactor into an ultrahigh vacuum (UHV) chamber for surface science analysis. A very compact, multifunctional Chemical Vapor Deposition (CVD) reactor for direct attachment to any typical UHV system for thin film analysis was designed and built. Besides compactness, fast, easy, and at the same time ultimately clean sample transfer between reactor and UHV was a major goal. It was achieved by a combination of sample manipulation parts, sample heater, and a shutter mechanism designed to fit all into a NW38 Conflat six-ways cross. The present reactor design is versatile to be employed for all commonly employed variants of CVD, including Atomic Layer Deposition. A demonstration of the functionality of the system is provided. First results of the setup (attached to an Omicron Multiprobe x-ray photoelectron spectroscopy system) on the temperature dependence of Pulsed Spray Evaporation-CVD of Ni films from Ni acetylacetonate as the precursor demonstrate the reactor performance and illustrate the importance of clean sample transfer without breaking vacuum in order to obtain unambiguous results on the quality of CVD-grown thin Ni films. The widely applicable design holds promise for future systematic studies of the fundamental processes during chemical vapor deposition or atomic layer deposition

  4. Mesoporous MgO: Synthesis, physico-chemical, and catalytic properties

    Science.gov (United States)

    Maerle, A. A.; Kasyanov, I. A.; Moskovskaya, I. F.; Romanovsky, B. V.

    2016-06-01

    Mesoporous MgO was obtained via the hydrothermal synthesis using both ionogenic and non-ionogenic surfactants as structure-directing templates. The materials prepared were characterized by SEM, BET-N2, XRD, and TG-DTA techniques. MgO particles are spherical 20-μm aggregates of primary oxide particles well shaped as rectangular parallelepipeds. Magnesium oxide samples have the specific surface area of 290-400 m2/g and pore sizes of 3.3-4.1 nm. Their mesoporous structure remained unchanged after calcination up to 350°C. Catalytic activity of mesoporous MgO was studied in acetone condensation reaction.

  5. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    Science.gov (United States)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  6. Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhiting; Zhou, Feng; Parobek, David; Shenoy, Ganesh J.; Muldoon, Patrick; Liu, Haitao, E-mail: hliu@pitt.edu

    2015-04-15

    We report the catalytic effect of copper substrate on graphene–oxygen reaction at high temperature. Previous studies showed that graphene grown on copper are mostly defect-free with strong oxidation resistance. We found that a freshly prepared copper-supported graphene sample can be completely oxidized in trace amount of oxygen (<3 ppm) at 600 °C within 2 h. Both X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) suggest that upon ambient air exposure, oxygen molecules diffuse into the space between graphene and copper, resulting in the formation of copper oxide which acts as catalytic sites for the graphene-oxygen reaction. This result has important implications for the characterization, processing, and storage of copper-supported graphene samples. - Graphical abstract: The copper substrate enhances the thermel oxidation of single-layer graphene. - Highlights: • A copper-supported graphene can be oxidized in Ar (O{sub 2}<3 ppm, 600 °C, 2 h). • O{sub 2} intercalates between graphene and copper upon exposure to air. • The copper foil should not be considered as an inert substrate.

  7. Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

    International Nuclear Information System (INIS)

    We report the catalytic effect of copper substrate on graphene–oxygen reaction at high temperature. Previous studies showed that graphene grown on copper are mostly defect-free with strong oxidation resistance. We found that a freshly prepared copper-supported graphene sample can be completely oxidized in trace amount of oxygen (<3 ppm) at 600 °C within 2 h. Both X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) suggest that upon ambient air exposure, oxygen molecules diffuse into the space between graphene and copper, resulting in the formation of copper oxide which acts as catalytic sites for the graphene-oxygen reaction. This result has important implications for the characterization, processing, and storage of copper-supported graphene samples. - Graphical abstract: The copper substrate enhances the thermel oxidation of single-layer graphene. - Highlights: • A copper-supported graphene can be oxidized in Ar (O2<3 ppm, 600 °C, 2 h). • O2 intercalates between graphene and copper upon exposure to air. • The copper foil should not be considered as an inert substrate

  8. Technology Roadmap: Energy and GHG reductions in the chemical industry via catalytic processes

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2013-06-01

    The chemical industry is a large energy user; but chemical products and technologies also are used in a wide array of energy saving and/or renewable energy applications so the industry has also an energy saving role. The chemical and petrochemical sector is by far the largest industrial energy user, accounting for roughly 10% of total worldwide final energy demand and 7% of global GHG emissions. The International Council of Chemical Associations (ICCA) has partnered with the IEA and DECHEMA (Society for Chemical Engineering and Biotechnology) to describe the path toward further improvements in energy efficiency and GHG reductions in the chemical sector. The roadmap looks at measures needed from the chemical industry, policymakers, investors and academia to press on with catalysis technology and unleash its potential around the globe. The report uncovers findings and best practice opportunities that illustrate how continuous improvements and breakthrough technology options can cut energy use and bring down greenhouse gas (GHG) emission rates. Around 90% of chemical processes involve the use of catalysts – such as added substances that increase the rate of reaction without being consumed by it – and related processes to enhance production efficiency and reduce energy use, thereby curtailing GHG emission levels. This work shows an energy savings potential approaching 13 exajoules (EJ) by 2050 – equivalent to the current annual primary energy use of Germany.

  9. Catalytic Conversion of Biomass to Fuels and Chemicals Using Ionic Liquids

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei; Zheng, Richard; Brown, Heather; Li, Joanne; Holladay, John; Cooper, Alan; Rao, Tony

    2012-04-13

    This project provides critical innovations and fundamental understandings that enable development of an economically-viable process for catalytic conversion of biomass (sugar) to 5-hydroxymethylfurfural (HMF). A low-cost ionic liquid (Cyphos 106) is discovered for fast conversion of fructose into HMF under moderate reaction conditions without any catalyst. HMF yield from fructose is almost 100% on the carbon molar basis. Adsorbent materials and adsorption process are invented and demonstrated for separation of 99% pure HMF product and recovery of the ionic liquid from the reaction mixtures. The adsorbent material appears very stable in repeated adsorption/regeneration cycles. Novel membrane-coated adsorbent particles are made and demonstrated to achieve excellent adsorption separation performances at low pressure drops. This is very important for a practical adsorption process because ionic liquids are known of high viscosity. Nearly 100% conversion (or dissolution) of cellulose in the catalytic ionic liquid into small molecules was observed. It is promising to produce HMF, sugars and other fermentable species directly from cellulose feedstock. However, several gaps were identified and could not be resolved in this project. Reaction and separation tests at larger scales are needed to minimize impacts of incidental errors on the mass balance and to show 99.9% ionic liquid recovery. The cellulose reaction tests were troubled with poor reproducibility. Further studies on cellulose conversion in ionic liquids under better controlled conditions are necessary to delineate reaction products, dissolution kinetics, effects of mass and heat transfer in the reactor on conversion, and separation of final reaction mixtures.

  10. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    Science.gov (United States)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  11. Understanding and improving the chemical vapor deposition process for solar grade silicon production

    OpenAIRE

    Ramos Cabal, Alba

    2015-01-01

    Esta Tesis Doctoral se centra en la investigación del proceso de producción de polisilicio para aplicaciones fotovoltaicas (FV) por la vía química; mediante procesos de depósito en fase vapor (CVD). El polisilicio para la industria FV recibe el nombre de silicio de grado solar (SoG Si). Por un lado, el proceso que domina hoy en día la producción de SoG Si está basado en la síntesis, destilación y descomposición de triclorosilano (TCS) en un reactor CVD -denominado reactor Siemens-. El materia...

  12. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  13. Preliminary chemical analysis and biological testing of materials from the HRI catalytic two-stage liquefaction (CTSL) process. [Aliphatic hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Later, D.W.; Wilson, B.W.

    1985-01-01

    Coal-derived materials from experimental runs of Hydrocarbon Research Incorporated's (HRI) catalytic two-stage liquefaction (CTSL) process were chemically characterized and screened for microbial mutagenicity. This process differs from two-stage coal liquefaction processes in that catalyst is used in both stages. Samples from both the first and second stages were class-fractionated by alumina adsorption chromatography. The fractions were analyzed by capillary column gas chromatography; gas chromatography/mass spectrometry; direct probe, low voltage mass spectrometry; and proton nuclear magnetic resonance spectrometry. Mutagenicity assays were performed with the crude and class fractions in Salmonella typhimurium, TA98. Preliminary results of chemical analyses indicate that >80% CTSL materials from both process stages were aliphatic hydrocarbon and polynuclear aromatic hydrocarbon (PAH) compounds. Furthermore, the gross and specific chemical composition of process materials from the first stage were very similar to those of the second stage. In general, the unfractionated materials were only slightly active in the TA98 mutagenicity assay. Like other coal liquefaction materials investigated in this laboratory, the nitrogen-containing polycyclic aromatic compound (N-PAC) class fractions were responsible for the bulk of the mutagenic activity of the crudes. Finally, it was shown that this activity correlated with the presence of amino-PAH. 20 figures, 9 tables.

  14. Superconducting MgB2 film prepared by chemical vapor deposition at atmospheric pressure of N2

    International Nuclear Information System (INIS)

    A simple and effective chemical vapor deposition equipment was developed for deposition of superconducting MgB2 thin films. The pure precursor Boron films were prepared in base pressure of low vacuum and deposited in atmospheric pressure. After the precursor film annealed in Mg vapor, the superconducting MgB2 film was fabricated. During the precursor Boron films preparation, N2 and Ar were used as carrier gas. Compared to Ar gas, the films show better crystallization, surface morphology and superconducting performance when N2 is adopted as carrier gas. With flow rate of 200 sccm of N2 gas, the fabricated MgB2 films exhibit the highest superconducting transition temperature of 39.5 K, which is among the best results of MgB2 thin films. This method provides a suitable method to realize high quality MgB2 Josephson junctions and industrial manufacture of MgB2 superconducting thin films on a large scale. - Highlights: • Boron films were deposited in atmospheric pressure. • Boron films deposited in N2 atmosphere have better morphology than that of in Ar. • MgB2 films show better crystallization and superconductivity in N2 atmosphere

  15. Organic, inorganic and total mercury determination in fish by chemical vapor generation with collection on a gold gauze and electrothermal atomic absorption spectrometry

    Science.gov (United States)

    Duarte, Fábio Andrei; Bizzi, Cezar Augusto; Antes, Fabiane Goldschmidt; Dressler, Valderi Luiz; Flores, Érico Marlon de Moraes

    2009-06-01

    A method for organic, inorganic and total mercury determination in fish tissue has been developed using chemical vapor generation and collection of mercury vapor on a gold gauze inside a graphite tube and further atomization by electrothermal atomic absorption spectrometry. After drying and cryogenic grinding, potassium bromide and hydrochloric acid solution (1 mol L - 1 KBr in 6 mol L - 1 HCl) was added to the samples. After centrifugation, total mercury was determined in the supernatant. Organomercury compounds were selectively extracted from KBr solution using chloroform and the resultant solution was back extracted with 1% m/v L-cysteine. This solution was used for organic Hg determination. Inorganic Hg remaining in KBr solution was directly determined by chemical vapor generation electrothermal atomic absorption spectrometry. Mercury vapor generation from extracts was performed using 1 mol L - 1 HCl and 2.5% m/v NaBH 4 solutions and a batch chemical vapor generation system. Mercury vapor was collected on the gold gauze heated resistively at 80 °C and the atomization temperature was set at 650 °C. The selectivity of extraction was evaluated using liquid chromatography coupled to chemical vapor generation and determination by inductively coupled plasma mass spectrometry. The proposed method was applied for mercury analysis in shark, croaker and tuna fish tissues. Certified reference materials were used to check accuracy and the agreement was better than 95%. The characteristic mass was 60 pg and method limits of detection were 5, 1 and 1 ng g - 1 for organic, inorganic and total mercury, respectively. With the proposed method it was possible to analyze up to 2, 2 and 6 samples per hour for organic, inorganic and total Hg determination, respectively.

  16. Organic, inorganic and total mercury determination in fish by chemical vapor generation with collection on a gold gauze and electrothermal atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Duarte, Fabio Andrei; Bizzi, Cezar Augusto; Goldschmidt Antes, Fabiane; Dressler, Valderi Luiz [Departamento de Quimica, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil); Flores, Erico Marlon de Moraes [Departamento de Quimica, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil)], E-mail: flores@quimica.ufsm.br

    2009-06-15

    A method for organic, inorganic and total mercury determination in fish tissue has been developed using chemical vapor generation and collection of mercury vapor on a gold gauze inside a graphite tube and further atomization by electrothermal atomic absorption spectrometry. After drying and cryogenic grinding, potassium bromide and hydrochloric acid solution (1 mol L{sup - 1} KBr in 6 mol L{sup - 1} HCl) was added to the samples. After centrifugation, total mercury was determined in the supernatant. Organomercury compounds were selectively extracted from KBr solution using chloroform and the resultant solution was back extracted with 1% m/v L-cysteine. This solution was used for organic Hg determination. Inorganic Hg remaining in KBr solution was directly determined by chemical vapor generation electrothermal atomic absorption spectrometry. Mercury vapor generation from extracts was performed using 1 mol L{sup - 1} HCl and 2.5% m/v NaBH{sub 4} solutions and a batch chemical vapor generation system. Mercury vapor was collected on the gold gauze heated resistively at 80 deg. C and the atomization temperature was set at 650 deg. C. The selectivity of extraction was evaluated using liquid chromatography coupled to chemical vapor generation and determination by inductively coupled plasma mass spectrometry. The proposed method was applied for mercury analysis in shark, croaker and tuna fish tissues. Certified reference materials were used to check accuracy and the agreement was better than 95%. The characteristic mass was 60 pg and method limits of detection were 5, 1 and 1 ng g{sup - 1} for organic, inorganic and total mercury, respectively. With the proposed method it was possible to analyze up to 2, 2 and 6 samples per hour for organic, inorganic and total Hg determination, respectively.

  17. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Loh Ter-Hoe

    2007-01-01

    Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

  18. Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Meng [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Ogawa, Shuichi, E-mail: ogasyu@tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Takabayashi, Susumu; Otsuji, Taiichi [Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Core Research for Evolutionary Science and Technology, Japan Science and Technology Agency, K' s Gobancho Bldg., 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan); Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-11-15

    Diamond-like carbon (DLC) films grown by photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD) have attracted attention as a gate insulator for graphene-channel field effect transistors (GFETs). In this study, the possibility of using PA-PECVD to grow insulating DLC films for GFETs is explored by focusing on the growth rate and uniformity of DLC films on Si substrates. Initially, the DLC films were formed at a constant rate but the growth rate decreased rapidly when the thickness reached approximately 400 nm. This is because of a decrease in photoelectron emissions from the Si substrates as they are covered by DLC films which absorb UV photons. However, the DLC films formed uniformly at thicknesses less than 16%. This result indicates that PA-PECVD is a promising method for growing DLC films as the gate dielectric layer of GFETs.

  19. Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, Yuh-Shiuan; Haq, A. F. M. Saniul; Kao, Tsung-Ting; Mehta, Karan; Shen, Shyh-Chiang; Detchprohm, Theeradetch; Yoder, P. Douglas; Dupuis, Russell D.; Xie, Hongen; Ponce, Fernando A.

    2016-06-01

    We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

  20. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.