Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

International Nuclear Information System (INIS)

Wang, Y.; Liu, Y.; Wang, B.

2014-01-01

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter

A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3

International Nuclear Information System (INIS)

Singhal, R.K.; Samariya, A.; Kumar, Sudhish; Sharma, S.C.; Xing, Y.T.; Deshpande, U.P.; Shripathi, T.; Saitovitch, E.

2010-01-01

We report on the reversible manipulation of room temperature ferromagnetism in Fe (5%) doped In 2 O 3 polycrystalline magnetic semiconductor. The X-ray diffraction and photoemission measurements confirm that the Fe ions are well incorporated into the lattice, substituting the In 3+ ions. The magnetization measurements show that the host In 2 O 3 has a diamagnetic ground state, while it shows weak ferromagnetism at 300 K upon Fe doping. The as-prepared sample was then sequentially annealed in hydrogen, air, vacuum and finally in air. The ferromagnetic signal shoots up by hydrogenation as well as vacuum annealing and bounces back upon re-annealing the samples in air. The sequence of ferromagnetism shows a close inter-relationship with the behavior of oxygen vacancies (V o ). The Fe ions tend to a transform from 3+ to 2+ state during the giant ferromagnetic induction, as revealed by photoemission spectroscopy. A careful characterization of the structure, purity, magnetic, and transport properties confirms that the ferromagnetism is due to neither impurities nor clusters but directly related to the oxygen vacancies. The ferromagnetism can be reversibly controlled by these vacancies while a parallel variation of carrier concentration, as revealed by resistance measurements, appears to be a side effect of the oxygen vacancy variation.

Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

KAUST Repository

Awan, Saif Ullah

2014-10-28

Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn1-yLiyO(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4×1017/cc to 7.3×1017/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5kV/cm (0.11 μC/cm2) and 2.8kV/cm (0.15 μC/cm2) for y=0.08 and y=0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3×1017/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

Fe-Vacancy-Induced Ferromagnetism in Tetragonal FeSe Thin Films

International Nuclear Information System (INIS)

Yong-Feng, Li; Gui-Bin, Liu; Li-Jie, Shi; Bang-Gui, Liu

2009-01-01

Motivated by recent experiments, we investigate structural, electronic, and magnetic properties of tetragonal FeSe with Fe vacancies using the state-of-the-art first-principles method. We show that Fe vacancies tend to stay in the same one of the two sublattices and thus induce ferromagnetism in the ground-state phase. Our calculated net moment is in good agreement with the experimental data available. Therefore, the ferromagnetism observed in tetragonal FeSe thin films is explained. It could be made controllable soon for spintronic applications

Defects related room temperature ferromagnetism in Cu-implanted ZnO nanorod arrays

International Nuclear Information System (INIS)

Li, D.; Li, D.K.; Wu, H.Z.; Liang, F.; Xie, W.; Zou, C.W.; Shao, L.X.

2014-01-01

Highlights: • Room temperature ferromagnetism was observed in Cu-implanted ZnO nanorod arrays. • Cu-implanted ZnO nanorods show a saturation magnetization value of 1.82 μ B /Cu. • The origin of ferromagnetism can be explained by the defects related bound magnetic polarons. -- Abstract: Room temperature ferromagnetism (FM) was observed in Cu-implanted ZnO nanorod arrays. The implantation dose for Cu ions was 1 × 10 16 cm −2 and the implantation energy was 100 keV. The ion implantation induced defects and disorder has been observed by the XRD, PL and TEM experiments. The PL spectrum revealed a dominant luminescence peaks at 390 nm and a broad and strong green emission at 500–700 nm, which is considered to be related to the ionized oxygen vacancy. Cu-implanted ZnO nanorods annealed at 500 °C show a saturation magnetization value of 1.82 μ B /Cu and a positive coercive field of 68 Oe. The carrier concentration is not much improved after annealing and in the order of 10 16 cm −3 , which suggests that FM does not depend upon the presence of a significant carrier concentration. The origin of ferromagnetism behavior can be explained on the basis of electrons and defects that form bound magnetic polarons, which overlap to create a spin-split impurity band

Defects induced ferromagnetism in Mn doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Chattopadhyay, S.; Neogi, S.K. [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India); Sarkar, A. [Department of Physics, Bangabasi Morning College, Kolkata 700009 (India); Mukadam, M.D.; Yusuf, S.M. [Solid State Physics Division, Bhaba Atomic Research Centre, Mumbai 400085 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.i [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India)

2011-02-15

Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 {sup o}C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other ({approx}32{+-}4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 {mu}{sub B}/Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required. - Research highlights: 2 at% Mn doped ZnO samples are single phase. All the samples exhibit ferromagnetism at room temperature. Correlation between saturation magnetization and positron annihilation lifetime established.

Defects induced ferromagnetism in Mn doped ZnO

International Nuclear Information System (INIS)

Chattopadhyay, S.; Neogi, S.K.; Sarkar, A.; Mukadam, M.D.; Yusuf, S.M.; Banerjee, A.; Bandyopadhyay, S.

2011-01-01

Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 o C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other (∼32±4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 μ B /Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required. - Research highlights: → 2 at% Mn doped ZnO samples are single phase. → All the samples exhibit ferromagnetism at room temperature. → Correlation between saturation magnetization and positron annihilation lifetime established.

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

KAUST Repository

Aravindh, S. Assa

2014-12-19

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

KAUST Repository

Aravindh, S. Assa; Schwingenschlö gl, Udo; Roqan, Iman S.

2014-01-01

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn 48O48 nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high TC in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Giant superconductivity-induced modulation of the ferromagnetic magnetization in a cuprate-manganite superlattice.

Science.gov (United States)

Hoppler, J; Stahn, J; Niedermayer, Ch; Malik, V K; Bouyanfif, H; Drew, A J; Rössle, M; Buzdin, A; Cristiani, G; Habermeier, H-U; Keimer, B; Bernhard, C

2009-04-01

Artificial multilayers offer unique opportunities for combining materials with antagonistic orders such as superconductivity and ferromagnetism and thus to realize novel quantum states. In particular, oxide multilayers enable the utilization of the high superconducting transition temperature of the cuprates and the versatile magnetic properties of the colossal-magnetoresistance manganites. However, apart from exploratory work, the in-depth investigation of their unusual properties has only just begun. Here we present neutron reflectometry measurements of a [Y(0.6)Pr(0.4)Ba(2)Cu(3)O(7) (10 nm)/La(2/3)Ca(1/3)MnO(3) (10 nm)](10) superlattice, which reveal a surprisingly large superconductivity-induced modulation of the vertical ferromagnetic magnetization profile. Most surprisingly, this modulation seems to involve the density rather than the orientation of the magnetization and is highly susceptible to the strain, which is transmitted from the SrTiO(3) substrate. We outline a possible explanation of this unusual superconductivity-induced phenomenon in terms of a phase separation between ferromagnetic and non-ferromagnetic nanodomains in the La(2/3)Ca(1/3)MnO(3) layers.

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

Science.gov (United States)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Induced magnetization spiral in a nonmagnetic metal sandwiched between two ferromagnets

CERN Document Server

Mathon, J; Villeret, M; Muniz, R B; Edwards, D M

2000-01-01

Calculation of the magnetic moment induced in a non-magnetic metal, sandwiched between two ferromagnets with magnetizations at an arbitrary angle, is reported. It is found that the induced magnetization rotates along a complex three-dimensional spiral and can undergo many complete 360 deg. rotations. A simple free-electron model is used to derive an analytic formula for the twist angle phi inside the spacer. This demonstrates that, contrary to the behavior of magnetization inside a domain wall in a ferromagnet, phi varies non-uniformly inside the spacer and exhibits plateaus of almost constant rotation separated by regions of sharp rotations by large angles. The calculation is extended to the case of a realistic Co/Cu/Co(0 0 1) trilayer described by s, p, d tight-binding bands fitted to an ab initio band structure. An analytic formula for the components of the induced moment (and hence, for phi) is derived using the stationary phase approximation. Its validity is tested against a fully numerical calculation u...

Ferromagnetism in Gd doped ZnO nanowires: A first principles study

Energy Technology Data Exchange (ETDEWEB)

Aravindh, S. Assa; Schwingenschloegl, Udo, E-mail: udo.schwingenschloegl@kaust.edu.sa, E-mail: iman.roqan@kaust.edu.sa; Roqan, Iman S., E-mail: udo.schwingenschloegl@kaust.edu.sa, E-mail: iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

2014-12-21

In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn{sub 48}O{sub 48} nanowires doped with Gd, using density functional theory. Our findings indicate that substitutionally incorporated Gd atoms prefer occupying the surface Zn sites. Moreover, the formation energy increases with the distance between Gd atoms, signifying that no Gd-Gd segregation occurs in the nanowires within the concentration limit of ≤2%. Gd induces ferromagnetism in ZnO nanowires with magnetic coupling energy up to 21 meV in the neutral state, which increases with additional electron and O vacancy, revealing the role of carriers in magnetic exchange. The potential for achieving room temperature ferromagnetism and high T{sub C} in ZnO:Gd nanowires is evident from the large ferromagnetic coupling energy (200 meV) obtained with the O vacancy. Density of states shows that Fermi level overlaps with Gd f states with the introduction of O vacancy, indicating the possibility of s-f coupling. These results will assist in understanding experimental findings in Gd-doped ZnO nanowires.

Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

KAUST Repository

Assa Aravindh, S

2015-12-14

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

Defect-impurity complex induced long-range ferromagnetism in GaN nanowires

KAUST Repository

Assa Aravindh, S; Roqan, Iman S.

2015-01-01

Present work investigates the structural, electronic and magnetic properties of Gd doped wurtzite GaN nanowires (NWs) oriented along the [0001] direction in presence of intrinsic defects by employing the GGA + U approximation. We find that Ga vacancy (VGa) exhibits lower formation energy compared to N vacancy. Further stabilization of point defects occurs due to the presence of Gd. The strength of ferromagnetism (FM) increases by additional positive charge induced by the VGa. Electronic structure analysis shows that VGa introduces defect levels in the band gap leading to ferromagnetic coupling due to the hybridization of the p states of the Ga and N atoms with the Gd d and f states. Ferromagnetic exchange coupling energy of 76.4 meV is obtained in presence of Gd-VGa complex; hence, the FM is largely determined by the cation vacancy-rare earth complex defects in GaN NWs.

Blue shift of the plasma edge of a ferromagnetic semimetal

International Nuclear Information System (INIS)

Wachter, P.; Bommeli, F.; Degiorgi, L.; Burlet, P.; Bourdarot, F.

1998-01-01

Full text: In general rare earth pnictides are semimetals and antiferromagnets. Only some nitrides are quoted as ferri or ferromagnetic. However, it has been shown when prepared stoichiometrically and in single crystalline form the free carrier concentration is only in the percent per cation range, thus they are typical low carrier systems. Under these conditions the nitrides are all canted antiferromagnets and metamagnets, i.e. they show Abstract only. The full magnetic moment only with an applied magnetic field. However, when prepared as single crystals but with excess of the rare earths they become spontaneously ferromagnets due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in addition to the superexchange mechanisms. On such ferromagnetic compositions of TbN and GdN and also in EuB 6 a new magneto-optic effect has been discovered, a spontaneous blue shift of the plasma edge upon magnetic order. The plasma edge is measured with optical reflectivity and it depends on the free carrier concentration. In other words the free carrier concentration increases upon ferromagnetic order. This effect can be understood with the spontaneous exchange splitting of mainly the 5d conduction band, lowering the bottom of the spin up 5d band, thus increasing the indirect overlap with the valence p band of the anions and thus enhancing the carrier concentration. This blue shift of the plasma edge follows a spin correlation function. An external magnetic field applied near TC enhances the blue shift since the magnetization is not yet saturated. For T→0 a magnetic field has no effect since the magnetization is spontaneously saturated

Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

Science.gov (United States)

Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2013-02-01

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

Effect of the change in the interface structure of Pd(100)/SrTiO{sub 3} for quantum-well induced ferromagnetism

Energy Technology Data Exchange (ETDEWEB)

Sakuragi, Shunsuke, E-mail: sakuragi@az.appi.keio.ac.jp [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-0061 (Japan); Ogawa, Tomoyuki [Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Sato, Tetsuya [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-0061 (Japan)

2017-02-01

Measurements of temperature dependent magnetization of Pd(100) ultrathin films on SrTiO{sub 3}(100) substrates which shows quantum-well induced ferromagnetism were performed. We observed the jump in magnetization of Pd(100) due to the structural phase transition of SrTiO{sub 3}, and then, the disappearance of ferromagnetism after temperature-cycle repetition. X-ray reflectivity measurement revealed that the density of a few layers in the Pd film decreased near the Pd/SrTiO{sub 3} interface after temperature cycles. This suggests that the structural change affects the quantum-well induced ferromagnetism, and lowering of the crystallinity of Pd at the interface has a negative effect on quantum-well induced ferromagnetism of Pd(100) ultrathin films. - Highlights: • Interface manipulation of quantum-well induced ferromagnetism was performed. • Ferromagnetic Pd(100) ultrathin films on SrTiO{sub 3} substrate were prepared. • The structural phase transition of SrTiO{sub 3} degraded gradually the interface structure. • Change in the interface structure caused change in the magnetic moment of Pd. • Magnetic change was interpreted by modulation in the effective thickness of the film.

Electric-field-induced extremely large change in resistance in graphene ferromagnets

Science.gov (United States)

Song, Yu

2018-01-01

A colossal magnetoresistance (˜100×10^3% ) and an extremely large magnetoresistance (˜1×10^6% ) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to 305×10^6% (16×10^3% ) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that the proposed effect can be realized in devices using other magnetic insulators, such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

High-output microwave detector using voltage-induced ferromagnetic resonance

International Nuclear Information System (INIS)

Shiota, Yoichi; Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

2014-01-01

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque

Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions

Institute of Scientific and Technical Information of China (English)

Hossein Karbaschi; Gholam Reza Rashedi

2015-01-01

We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using the Dirac–Bogoliubov–de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission prob-ability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (EFN∼400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of EFN−mv2F

The effect of disorder and fluctuations on the magnetotransport of a double-exchange ferromagnet (abstract)

International Nuclear Information System (INIS)

Byers, J.M.

1996-01-01

The discovery of colossal magnetoresistance (CMR) in the doped perovskite manganites has reawakened interest in the double-exchange mechanism proposed to Zener. To account for the close relation between ferromagnetism and metallic transport in lanthanum manganites doped with divalent cation (Ca, Sr, Ba) Zener claimed that an electron could delocalize on lattice of spins and still conform to Hund close-quote s Rule if a ferromagnetic coupling between spins were mediated by that same electron. Thus, the onset of metallic behavior (delocalization) is intimately linked to ferromagnetic ordering of the spin lattice. Clearly, the double-exchange mechanism provides some necessary physics but is not sufficient in explaining the key mystery of the CMR materials: What causes the large peak in the resistivity vs. temperature and why is it removed by an applied magnetic field. The effect of disorder and fluctuations on the double-exchange mechanism may provide the answers. Several sources of disorder in these materials act to form a mobility edge via Anderson localization: intrinsic divalent/trivalent cation disorder, off-diagonal disorder caused by the spin lattice and oxygen vacancy disorder. A mean-field calculation reveals that below the Curie temperature those carriers aligned opposite to the magnetization experience a narrowing band as the temperature is reduced. Fermi glass behavior is induced in this minority carrier band by the Fermi level falling below the mobility edge. However, the mean-field result does not contain a peak in resistivity since the majority carrier band does not behave as a Fermi glass and effectively open-quote open-quote shorts out close-quote close-quote the more resistive minority conduction channel. The formation of the resistivity peak requires the inclusion of ferromagnetic fluctuations above the Curie temperature that tend to open-quote open-quote mix close-quote close-quote the two conduction channels. (Abstract Truncated)

Sub-micron magnetic patterns and local variations of adhesion force induced in non-ferromagnetic amorphous steel by femtosecond pulsed laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Huiyan; Feng, Yuping [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); Nieto, Daniel [Microoptics and GRIN Optics Group, Applied Physics Department, University of Santiago de Compostela, E15782 Santiago de Compostela (Spain); García-Lecina, Eva [Unidad de Superficies Metálicas, IK4-CIDETEC, E20009 Donostia-San Sebastián Gipuzkoa (Spain); Mcdaniel, Clare [National Centre for Laser Applications, School of Physics, National University of Ireland, Galway (Ireland); Díaz-Marcos, Jordi [Unitat de Tècniques Nanomètriques, Centres Científics i Tecnològics, Universitat de Barcelona, E08028 Barcelona (Spain); Flores-Arias, María Teresa [Microoptics and GRIN Optics Group, Applied Physics Department, University of Santiago de Compostela, E15782 Santiago de Compostela (Spain); O’Connor, Gerard M. [National Centre for Laser Applications, School of Physics, National University of Ireland, Galway (Ireland); Baró, Maria Dolors [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); Pellicer, Eva, E-mail: eva.pellicer@uab.cat [Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, E08193 (Spain); and others

2016-05-15

Highlights: • Formation of ripples after femtosecond pulsed laser irradiation (FSPLI) of metallic glass was studied. • Magnetic patterning at the surface of non-ferromagnetic amorphous steel was induced by FSPLI. • The origin of the generated ferromagnetism is the laser-induced devitrification. - Abstract: Periodic ripple and nanoripple patterns are formed at the surface of amorphous steel after femtosecond pulsed laser irradiation (FSPLI). Formation of such ripples is accompanied with the emergence of a surface ferromagnetic behavior which is not initially present in the non-irradiated amorphous steel. The occurrence of ferromagnetic properties is associated with the laser-induced devitrification of the glassy structure to form ferromagnetic (α-Fe and Fe{sub 3}C) and ferrimagnetic [(Fe,Mn){sub 3}O{sub 4} and Fe{sub 2}CrO{sub 4}] phases located in the ripples. The generation of magnetic structures by FSPLI turns out to be one of the fastest ways to induce magnetic patterning without the need of any shadow mask. Furthermore, local variations of the adhesion force, wettability and nanomechanical properties are also observed and compared to those of the as-cast amorphous alloy. These effects are of interest for applications (e.g., biological, magnetic recording, etc.) where both ferromagnetism and tribological/adhesion properties act synergistically to optimize material performance.

Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage

International Nuclear Information System (INIS)

Shiota, Yoichi; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

2016-01-01

We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our findings reveal that the shape of the structure of the spectrum depends on the rotation angle of the external magnetic field, providing clear evidence that FMR dynamics are excited by voltage-induced magnetic anisotropy changes. Further, enhancement of the rectified voltage was demonstrated under a DC bias voltage. In our experiments, the highest microwave detection sensitivity obtained was 350 mV/mW, at an RF frequency of 1.0 GHz and field angle of θ_H=80°, ϕ_H=0°. The experimental results correlated with those obtained via simulation, and the calculated results revealed the magnetization dynamics at the resonance state. - Highlights: • Examined voltage-induced ferromagnetic resonance (FMR) under various field angles. • FMR dynamics are excited by voltage-induced magnetic anisotropy changes. • Microwave detection sensitivity depends on input RF and elevation angle. • Microwave detection sensitivity=350 mV/mW at RF=1.0 GHz, θ_H=80°, ϕ_H=0°.

Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

2011-07-01

Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

Spin-polarized carrier injection effect in ferromagnetic semiconductor/diffusive semiconductor/superconductor junctions

Energy Technology Data Exchange (ETDEWEB)

Akazaki, T [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 Japan (Japan); Sawa, Y; Yokoyama, T; Tanaka, Y [Department of Applied Physics, Nagoya University, Nagoya, 464-8603 Japan (Japan); Golubov, A A [Faculty of Science and Technology, University of Twente, Enschede (Netherlands); Munekata, H [Image Science and Engineering Lab., Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8503 Japan (Japan); Nishizawa, N; Takayanagi, H [International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 3-13 Sakura, Tsukuba, 305-0003 Japan (Japan)], E-mail: h-taka@rs.kagu.tus.ac.jp

2009-02-01

We study the transport properties of a p-InMnAs/n-InAs/Nb junction where a p-InMnAs can be regarded as a spin injector. Differential conductance of the n-InAs channel is measured as a function of injection current from p-InMnAs or from Nb at 20 mK. A conductance minimum appears at zero-bias voltage with no current injection. As the injection current from p-InMnAs increases, the minimum gradually disappears. This conductance behaviour is very different from that of the injection case from Nb. We also calculate the conductance in the n-InAs channel by taking account of the exchange field in the InAs channel that is induced by InMnAs ferromagnet. The difference between the conductance behaviours on injection current direction can be explained by the inverse proximity effect that the exchange field is also induced in the superconducting electrode.

Energy gap of ferromagnet-superconductor bilayers

Energy Technology Data Exchange (ETDEWEB)

Halterman, Klaus; Valls, Oriol T

2003-10-15

The excitation spectrum of clean ferromagnet-superconductor bilayers is calculated within the framework of the self-consistent Bogoliubov-de Gennes theory. Because of the proximity effect, the superconductor induces a gap in the ferromagnet spectrum, for thin ferromagnetic layers. The effect depends strongly on the exchange field in the ferromagnet. We find that as the thickness of the ferromagnetic layer increases, the gap disappears, and that its destruction arises from those quasiparticle excitations with wave vectors mainly along the interface. We discuss the influence that the interface quality and Fermi energy mismatch between the ferromagnet and superconductor have on the calculated energy gap. We also evaluate the density of states in the ferromagnet, and we find it in all cases consistent with the gap results.

On the possibility of the temperature-induced ferromagnetism in TiBe2 and other itinerant magnets

International Nuclear Information System (INIS)

Ioshpe, D.M.

1991-01-01

This paper proposes possible temperature-induced ferromagnetism (TIF) in TiBe 2 , TiBe 2-x Cu x and other itinerant magnets. The value of the critical field H cr for the existence of TIF in TiBe 2 , evaluated on the basis of the author's and others' experimental results, coincide with the value H cr congruent 610 G predicted by Enz within the spin density wave theory of itinerant antiferromagnetism (AFM). The possibilities of the existence in TiBe 2 of the TIF mechanism of spin fluctuations around the AFM mode as predicted by Moriya, and of the temperature-induced noncompensated itinerant AFM, i.e. ferromagnetism, are considered

Radiation-induced phase transformation in ferromagnetic perovskite

Energy Technology Data Exchange (ETDEWEB)

Podsekin, A K; Dem' yanov, V V; Ivanova, V V; Venevtsev, Yu N [Nauchno-Issledovatel' skij Fiziko-Khimicheskij Inst., Moscow (USSR)

1976-12-01

An effect of neutron irradiation inducing a phase transition in ferromagnetic perovskite, Sr/sub 0.3/La/sub 0.7/MnO/sub 3/, has been discovered and studied. It is shown that a change in the Curie temperature is proportional to the dose of reactor irradiation. A decrease in the temperature of the phase transition with the concentration of radiation defects is accompanied by an increase in the electrical specific resistance and a change in the initial lattice parameters. It is shown that the radiation shift is due to at least two causes, viz. to an increase in the parameters of the elementary cell and the growth of the electrical specific resistance as a result of bounded electron states' forming on the radiation defects.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

Science.gov (United States)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Nitrogen induced ferromagnetism in Cobalt doped BaTiO3

Directory of Open Access Journals (Sweden)

Chandrima Mitra

2012-09-01

Full Text Available The electronic structure and magnetism of Cobalt doped BaTiO3 (BaTi1−xCoxO3 is investigated. Substitutional Nitrogen on an Oxygen site is found to play an important role in inducing net magnetic moments in the system. The presence of a Nitrogen atom as nearest neighbour to a Cobalt atom is crucial in producing spin splitting of both the Nitrogen and Cobalt states thereby introducing a net local magnetic moment. The introduction of Nitrogen is further found to enhance ferromagnetic interactions between Cobalt atoms.

Novel superconducting state in ferromagnetic superconductor UCoGe. Microscopic coexistence of ferromagnetism and superconductivity probed by 59Co-NQR measurements

International Nuclear Information System (INIS)

Ishida, Kenji; Hattori, Taisuke; Ihara, Yoshihiko; Nakai, Yusuke; Sato, Noriaki K.; Deguchi, Kazuhiko; Tamura, Nobuyuki; Satoh, Isamu

2010-01-01

We have investigated the relationship between ferromagnetism and superconductivity in ferromagnetic superconductor UCoGe from 59 Co nuclear quadrupole resonance (NQR) measurements. Our experimental results indicate the microscopic coexistence of ferromagnetism and superconductivity in UCoGe, and suggest a 'self-induced vortex state' in its superconducting state. We also review NQR experiments, which play an important role in this study. (author)

Intrinsic and spatially nonuniform ferromagnetism in Co-doped ZnO films

Science.gov (United States)

Tseng, L. T.; Suter, A.; Wang, Y. R.; Xiang, F. X.; Bian, P.; Ding, X.; Tseng, A.; Hu, H. L.; Fan, H. M.; Zheng, R. K.; Wang, X. L.; Salman, Z.; Prokscha, T.; Suzuki, K.; Liu, R.; Li, S.; Morenzoni, E.; Yi, J. B.

2017-09-01

Co doped ZnO films have been deposited by a laser-molecular beam epitaxy system. X-ray diffraction and UV spectra analysis show that Co effectively substitutes the Zn site. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy analysis indicate that there are no clusters. Co dopants are uniformly distributed in ZnO film. Ferromagnetic ordering is observed in all samples deposited under an oxygen partial pressure, PO2=10-3 , 10-5, and 10-7 torr, respectively. However, the magnetization of PO2=10-3 and 10-5 is very small at room temperature. At low temperature, the ferromagnetic ordering is enhanced. Muon spin relaxation (μ SR ) measurements confirm the ferromagnetism in all samples, and the results are consistent with magnetization measurements. From μ SR and TEM analysis, the film deposited under PO2=10-7 torr shows intrinsic ferromagnetism. However, the volume fraction of the ferromagnetism phase is approximately 70%, suggesting that the ferromagnetism is not carrier mediated. Resistivity versus temperature measurements indicate Efros variable range hopping dominates the conductivity. From the above results, we can confirm that a bound magnetic polaron is the origin of the ferromagnetism.

Measurements of ultrafast spin-profiles and spin-diffusion properties in the domain wall area at a metal/ferromagnetic film interface.

Science.gov (United States)

Sant, T; Ksenzov, D; Capotondi, F; Pedersoli, E; Manfredda, M; Kiskinova, M; Zabel, H; Kläui, M; Lüning, J; Pietsch, U; Gutt, C

2017-11-08

Exciting a ferromagnetic material with an ultrashort IR laser pulse is known to induce spin dynamics by heating the spin system and by ultrafast spin diffusion processes. Here, we report on measurements of spin-profiles and spin diffusion properties in the vicinity of domain walls in the interface region between a metallic Al layer and a ferromagnetic Co/Pd thin film upon IR excitation. We followed the ultrafast temporal evolution by means of an ultrafast resonant magnetic scattering experiment in surface scattering geometry, which enables us to exploit the evolution of the domain network within a 1/e distance of 3 nm to 5 nm from the Al/FM film interface. We observe a magnetization-reversal close to the domain wall boundaries that becomes more pronounced closer to the Al/FM film interface. This magnetization-reversal is driven by the different transport properties of majority and minority carriers through a magnetically disordered domain network. Its finite lateral extension has allowed us to measure the ultrafast spin-diffusion coefficients and ultrafast spin velocities for majority and minority carriers upon IR excitation.

Electrical-field-induced magnetic Skyrmion ground state in a two-dimensional chromium tri-iodide ferromagnetic monolayer

Science.gov (United States)

Liu, Jie; Shi, Mengchao; Mo, Pinghui; Lu, Jiwu

2018-05-01

Using fully first-principles non-collinear self-consistent field density functional theory (DFT) calculations with relativistic spin-orbital coupling effects, we show that, by applying an out-of-plane electrical field on a free-standing two-dimensional chromium tri-iodide (CrI3) ferromagnetic monolayer, the Néel-type magnetic Skyrmion spin configurations become more energetically-favorable than the ferromagnetic spin configurations. It is revealed that the topologically-protected Skyrmion ground state is caused by the breaking of inversion symmetry, which induces the non-trivial Dzyaloshinskii-Moriya interaction (DMI) and the energetically-favorable spin-canting configuration. Combining the ferromagnetic and the magnetic Skyrmion ground states, it is shown that 4-level data can be stored in a single monolayer-based spintronic device, which is of practical interests to realize the next-generation energy-efficient quaternary logic devices and multilevel memory devices.

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Science.gov (United States)

Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

2017-07-01

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

Oxygen vacancy induced by La and Fe into ZnO nanoparticles to modify ferromagnetic ordering

International Nuclear Information System (INIS)

Verma, Kuldeep Chand; Kotnala, R.K.

2016-01-01

We reported long-range ferromagnetic interactions in La doped Zn 0.95 Fe 0.05 O nanoparticles that mediated through lattice defects or vacancies. Zn 0.92 Fe 0.05 La 0.03 O (ZFLaO53) nanoparticles were synthesized by a sol–gel process. X-ray fluorescence spectrum of ZFLaO53 detects the weight percentage of Zn, Fe, La and O. X-ray diffraction shows the hexagonal Wurtzite ZnO phase. The Rietveld refinement has been used to calculate the lattice parameters and the position of Zn, Fe, La and O atoms in the Wurtzite unit cell. The average size of ZFLaO53 nanoparticles is 99 nm. The agglomeration type product due to OH ions with La results into ZnO nanoparticles than nanorods that found in pure ZnO and Zn 0.95 Fe 0.05 O sample. The effect of doping concentration to induce Wurtzite ZnO structure and lattice defects has been analyzed by Raman active vibrational modes. Photoluminescence spectra show an abnormal emission in both UV and visible region, and a blue shift at near band edge is formed with doping. The room temperature magnetic measurement result into weak ferromagnetism but pure ZnO is diamagnetic. However, the temperature dependent magnetic measurement using zero-field and field cooling at dc magnetizing field 500 Oe induces long-range ferromagnetic ordering. It results into antiferromagnetic Neel temperature of ZFLaO53 at around 42 K. The magnetic hysteresis is also measured at 200, 100, 50 and 10 K measurement that indicate enhancement in ferromagnetism at low temperature. Overall, the La doping into Zn 0.95 Fe 0.05 O results into enhanced antiferromagnetic interaction as well as lattice defects/vacancies. The role of the oxygen vacancy as the dominant defects in doped ZnO must form Bound magnetic polarons has been described. - Graphical abstract: The long-range ferromagnetic order in Zn 0.92 Fe 0.05 La 0.03 O nanoparticles at low temperature measurements involves oxygen vacancy as the medium of magnetic interactions. - Highlights: • The La and Fe doping

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

Modeling and calculation of RKKY exchange coupling to explain Ti-vacancy-induced ferromagnetism in Ta-doped TiO2

Science.gov (United States)

Majidi, Muhammad Aziz; Bupu, Annamaria; Fauzi, Angga Dito

2017-12-01

We present a theoretical study on Ti-vacancy-induced ferromagnetism in anatase TiO2. A recent experimental study has revealed room temperature ferromagnetism in Ta-doped anatase TiO2thin films (Rusydi et al., 2012) [7]. Ta doping assists the formation of Ti vacancies which then induce the formation of localized magnetic moments around the Ti vacancies. As neighboring Ti vacancies are a few unit cells apart, the ferromagnetic order is suspected to be mediated by itinerant electrons. We propose that such an electron-mediated ferromagnetism is driven by Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction. To examine our hypothesis, we construct a tight-binding based model Hamiltonian for the anatase TiO2 system. We calculate the RKKY exchange coupling constant of TiO2 as a function of distance between local magnetic moments at various temperatures. We model the system by taking only the layer containing a unit of TiO2, at which the Ti vacancy is believed to form, as our effective two-dimensional unit cell. Our model incorporates the Hubbard repulsive interactions between electrons occupying Ti d orbitals treated within mean-field approximation. The density of states profile resulting from the model captures the relevant electronic properties of TiO2, such as the energy gap of 3.4 eV and the n-type character, which may be a measure of the adequacy of the model. The calculated RKKY coupling constant shows that the ferromagnetic coupling extends up to 3-4 unit cells and enhances slightly as temperature is increased from 0 to 400 K. These results support our hypothesis that the ferromagnetism of this system is driven by RKKY mechanism.

Defect induced d0 ferromagnetism in a ZnO grain boundary

KAUST Repository

Devi, Assa Aravindh Sasikala

2015-12-08

Several experimental studies have referred to the grain boundary(GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnOGB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Znvacancy (VZn) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB.Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0semiconductors.

Defect induced d0 ferromagnetism in a ZnO grain boundary

KAUST Repository

Devi, Assa Aravindh Sasikala; Schwingenschlö gl, Udo; Roqan, Iman S.

2015-01-01

Several experimental studies have referred to the grain boundary(GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnOGB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Znvacancy (VZn) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, VZn induces spin polarization as large as 0.68 μB/atom to the O sites at the GB.Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of VZn and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d0semiconductors.

Structural, magnetic and electrical properties of ferromagnetic/ferroelectric multilayers

International Nuclear Information System (INIS)

Sirena, M.; Kaul, E.; Guimpel, J.; Steren, L. B.; Pedreros, M. B.; Rodriguez, C. A.

2011-01-01

The La 0.75 Sr 0.25 MnO 3 (LSMO)/Ba 0.7 Sr 0.3 TiO 3 (BSTO) superlattices and bilayers, where LSMO is ferromagnetic and BSTO is ferroelectric, were grown by dc sputtering. X-ray diffraction indicates that the samples present a textured growth with the c axis perpendicular to the substrate. Magnetization measurements show a decrease of the sample's magnetization for decreasing ferromagnetic thickness. This effect could be related to the presence of biaxial strain and a magnetic dead layer in the samples. Conductive atomic force microscopy indicates that the samples present a total covering of the ferromagnetic layer for a ferroelectric thickness higher than four unit cells. Transport tunneling of the carriers seems to be the preferred conduction mechanism through the ferroelectric layer. These are promising results for the development of multiferroic tunnel junctions.

Ferromagnetism and half metallicity induced by oxygen vacancies in the double perovskite BaSrNiWO{sub 6}: DFT study

Energy Technology Data Exchange (ETDEWEB)

Aharbil, Y. [Laboratoire de Chimie Physique des Matériaux LCPM, Faculté des Sciences Ben M' Sik, Casablanca (Morocco); Labrim, H. [Unité Science de la Matière/DERS/Centre National de l’Energie, des Sciences et des Techniques Nucléaires (CNESTEN), Rabat (Morocco); Benmokhtar, S.; Haddouch, M. Ait [Laboratoire de Chimie Physique des Matériaux LCPM, Faculté des Sciences Ben M' Sik, Casablanca (Morocco); Bahmad, L., E-mail: bahmad@fsr.ac.ma [Mohammed V University in Rabat, Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E. URAC-12, B.P. 1014, Rabat (Morocco); Belhaj, A. [LIRST, Département de Physique, Faculté Poly-disciplinaire, Université Sultan Moulay Slimane, Béni Mellal (Morocco); Ez-Zahraouy, H.; Benyoussef, A. [Mohammed V University in Rabat, Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E. URAC-12, B.P. 1014, Rabat (Morocco)

2016-11-01

Using the spin polarized density functional theory (DFT) and exploring the Plane-Wave Self-Consistent Field (PWscf) code implemented in Quantum-ESPRESSO package, we investigate the effect of the Oxygen vacancies (V{sub O}) and the Oxygen interstitial (O{sub i}) on the double perovskite BaSrNiWO{sub 6}. This deals with the magnetic ordering and the electronic structure in such a pure sample exhibiting the insulating anti-ferromagnetic (AFM) state. This study shows that the presence of oxygen deficient defects converts the insulating to half metal with ferromagnetic or anti-ferromagnetic states. The magnetic ordering in BaSrNiWO{sub 6−δ} depends on the position of the Oxygen vacancy in the unit cell. However, it has been shown that the Oxygen interstitial preserves the anti-ferromagnetic propriety. We have computed the formation energies of different positions of the Oxygen vacancy (V{sub O}) and the Oxygen interstitial (O{sub i}) in the BaSrNiWO{sub 6} compound. We showed that the formation of V{sub O} is easier and vice versa for the O{sub i} formation. The obtained results reveal(V{sub O}) and the Oxygen interstitial (O{sub i}) that the anti-ferromagnetic can be converted to ferromagnetic in the double perovskite BaSrNiWO{sub 6} induced by Oxygen vacancies V{sub O}. - Highlights: • We have studied the ferromagnetism and Half Metallicity in Double Perovskite BaSrNiWO{sub 6}. • We have applied the Ab-inito calculations using the DFT approach. • We showed the effects induced by Oxygen Vacancies and Oxygen interstitial. • We found that the magnetic ordering in BaSrNiWO{sub 6−δ} depends on the position of the Oxygen vacancy in the unit cell.

Room temperature ferromagnetism in Co doped ZnO within an optimal doping level of 5%

International Nuclear Information System (INIS)

Mohapatra, J.; Mishra, D.K.; Mishra, Debabrata; Perumal, A.; Medicherla, V.R.R.; Phase, D.M.; Singh, S.K.

2012-01-01

Highlights: ► Zn 1−x Co x O ((0 ≤ x ≤ 0.1)) system synthesized by solid state reaction technique. ► Observation of room temperature ferromagnetism for 3 and 5% Co doped ZnO. ► XPS and EPMA studies predict the occurrence of segregated CoO clusters. ► Suppresses ferromagnetic ordering in higher doping percentage of Co (>5%). -- Abstract: We report on the structural, micro-structural and magnetic properties of Zn 1−x Co x O (0 ≤ x ≤ 0.1) system. Electron probe micro-structural analysis on 5% Co doped ZnO indicates the presence of segregated cobalt oxide which is also confirmed from the Co 2p core level X-ray photoelectron spectrum. The presence of oxygen defects in lower percentage of Co doped ZnO (≤5%) enhances the carrier mediated exchange interaction and thereby enhancing the room-temperature ferromagnetic behaviour. Higher doping percentage of cobalt (>5%) creates weak link between the grains and suppresses the carrier mediated exchange interaction. This is the reason why room temperature ferromagnetism is not observed in 7% and 10% Co doped ZnO.

Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

Energy Technology Data Exchange (ETDEWEB)

Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

2016-01-15

The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

Ferromagnetic properties of Mn-doped AlN

International Nuclear Information System (INIS)

Li, H.; Bao, H.Q.; Song, B.; Wang, W.J.; Chen, X.L.; He, L.J.; Yuan, W.X.

2008-01-01

Mn-doped AlN polycrystalline powders with a wurtzite structure were synthesized by solid-state reactions. A red-orange band at 600 nm, due to Mn 3+ incorporated into the AlN lattice, is observed in the photoluminescence (PL) spectrum at room temperature (RT). Magnetic measurements show the samples possess hysteresis loops up to 300 K, indicating that the obtained powders are ferromagnetic at around RT. The Mn concentration-induced RT ferromagnetism is less than 1 at%. Our results confirm that the RT ferromagnetism can be realized in Mn-doped AlN

Self-induced inverse spin-Hall effect in an iron and a cobalt single-layer films themselves under the ferromagnetic resonance

Science.gov (United States)

Kanagawa, Kazunari; Teki, Yoshio; Shikoh, Eiji

2018-05-01

The inverse spin-Hall effect (ISHE) is produced even in a "single-layer" ferromagnetic material film. Previously, the self-induced ISHE in a Ni80Fe20 film under the ferromagnetic resonance (FMR) was discovered. In this study, we observed an electromotive force (EMF) in an iron (Fe) and a cobalt (Co) single-layer films themselves under the FMR. As origins of the EMFs in the films themselves, the ISHE was main for Fe and dominant for Co, respectively 2 and 18 times larger than the anomalous Hall effect. Thus, we demonstrated the self-induced ISHE in an Fe and a Co single-layer films themselves under the FMR.

Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure

CSIR Research Space (South Africa)

Jule, L

2017-07-01

Full Text Available : 151-155 Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure Jule L Dejene F Ali AG Roro KT Mwakikunga BW ABSTRACT: In this work, electron paramagnetic resonance (EPR...

Defect induced d{sup 0} ferromagnetism in a ZnO grain boundary

Energy Technology Data Exchange (ETDEWEB)

Assa Aravindh, Sasikala Devi; Schwingenschloegl, Udo; Roqan, Iman S, E-mail: iman.roqan@kaust.edu.sa [Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 2955-6900 (Saudi Arabia)

2015-12-14

Several experimental studies have referred to the grain boundary (GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Zn vacancy (V{sub Zn}) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, V{sub Zn} induces spin polarization as large as 0.68 μ{sub B}/atom to the O sites at the GB. Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of V{sub Zn} and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d{sup 0} semiconductors.

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

2015-11-15

The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

Low frequency terahertz-induced demagnetization in ferromagnetic nickel

Energy Technology Data Exchange (ETDEWEB)

Shalaby, Mostafa, E-mail: most.shalaby@gmail.com; Vicario, Carlo, E-mail: carlo.vicario@psi.ch [SwissFEL, Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); Hauri, Christoph P., E-mail: christoph.hauri@psi.ch [SwissFEL, Paul Scherrer Institute, 5232 Villigen PSI (Switzerland); École Polytechnique Fédérale de Lausanne, 1015 Lausanne (Switzerland)

2016-05-02

A laser stimulus at terahertz (THz) frequency is expected to offer superior control over magnetization dynamics compared to an optical pulse, where ultrafast demagnetization is mediated by heat deposition. As a THz field cycle occurs on a timescale similar to the natural speed of spin motions, this can open a path for triggering precessional magnetization motion and ultimately ultrafast magnetic switching by the THz magnetic field component, without quenching. Here, we explore the ultrafast magnetic response of a ferromagnetic nickel thin film excited by a strong (33 MV/cm) terahertz transient in non-resonant conditions. While the magnetic laser pulse component induces ultrafast magnetic precessions, we experimentally found that at high pump fluence, the THz pulse leads to large quenching which dominates the precessional motion by far. Furthermore, degradation of magnetic properties sets in and leads to permanent modifications of the Ni thin film and damage.

Chemical disorder and charge transport in ferromagnetic manganites

International Nuclear Information System (INIS)

Pickett, W.E.; Singh, D.J.

1997-01-01

Disorder broadening due to randomly distributed La 3+ and A 2+ (A=Ca,Sr,Ba) cations is combined with a virtual-crystal treatment of the average system to evaluate the effects on both majority and minority transport in the ferromagnetic La 2/3 A 1/3 MnO 3 system. The low-density minority carriers which lie in the band tail are localized by disorder, while the majority carriers retain long mean free paths reflected in the observed strongly metallic conductivity. In addition to obtaining transport parameters, we provide evidence that local distortions are due to nearby ionic charges rather than to ion size considerations. copyright 1997 The American Physical Society

Ultrafast optically induced ferromagnetic/anti-ferromagnetic phase transition in GdTiO3 from first principles

Science.gov (United States)

Khalsa, Guru; Benedek, Nicole A.

2018-03-01

Epitaxial strain and chemical substitution have been the workhorses of functional materials design. These static techniques have shown immense success in controlling properties in complex oxides through the tuning of subtle structural distortions. Recently, an approach based on the excitation of an infrared active phonon with intense midinfrared light has created an opportunity for dynamical control of structure through special nonlinear coupling to Raman phonons. We use first-principles techniques to show that this approach can dynamically induce a magnetic phase transition from the ferromagnetic ground state to a hidden antiferromagnetic phase in the rare earth titanate GdTiO3 for realistic experimental parameters. We show that a combination of a Jahn-Teller distortion, Gd displacement, and infrared phonon motion dominate this phase transition with little effect from the octahedral rotations, contrary to conventional wisdom.

Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

Directory of Open Access Journals (Sweden)

Shi-Yi Zhuo

2012-03-01

Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

Exactly solvable spin–glass models with ferromagnetic couplings: The spherical multi-p-spin model in a self-induced field

International Nuclear Information System (INIS)

Crisanti, Andrea; Leuzzi, Luca

2013-01-01

We report some results on the quenched disordered Spherical multi-p-Spin Model in presence of ferromagnetic couplings. In particular, we present the phase diagrams of some representative cases that schematically describe, in the mean-field approximation, the behavior of most known transitions in glassy materials, including dynamic arrest in super-cooled liquids, amorphous–amorphous transitions and spin–glass transitions. A simplified notation is introduced in order to compute systems properties in terms of an effective, self-induced, field encoding the whole ferromagnetic information

Simulation of the tunnelling transport in ferromagnetic GaAs/ZnO heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Comesana, E; Aldegunde, M; Garcia-Loureiro, A J [Department de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Spain (Spain); Gehring, G A, E-mail: enrique.comesana@usc.e [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)

2010-07-01

In this work we have implemented a numerical simulator and analytical model to study the dependence of the tunnelling current on the polarization ratio of the carrier spin for a degenerate and ferromagnetic heterojunction. We have applied these models to study the behaviour of a magnetically doped GaAs/ZnO PN junction and the current transport in a PN heterojunction where the polarization of the spin of the charge carriers is also a control variable.

Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

2005-01-01

Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

Topological magnon bands in ferromagnetic star lattice

International Nuclear Information System (INIS)

Owerre, S A

2017-01-01

The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1–3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii–Moriya (DM) spin–orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases. (paper)

Topological magnon bands in ferromagnetic star lattice.

Science.gov (United States)

Owerre, S A

2017-05-10

The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1-3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii-Moriya (DM) spin-orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases.

Indium vacancy induced d0 ferromagnetism in Li-doped In2O3 nanoparticles

Science.gov (United States)

Cao, Haiming; Xing, Pengfei; Zhou, Wei; Yao, Dongsheng; Wu, Ping

2018-04-01

Li-doped In2O3 nanoparticles with room temperature d0 ferromagnetism were prepared by a sol-gel method. X-ray diffraction, X-ray photoelectron spectroscopy and photoluminescence were carried out to investigate the effects of Li incorporation on the lattice defects. As the content of Li increases, non-monotonic changes in shifts of XRD peak (2 2 2) and the intensity ratios of indium vacancies related photoluminescence peak (PII) with respect to oxygen vacancies related peak (PI) are observed. Results show that at low doping level (≤2 at.%) Li prefers to occupy In sites, while with further doping the interstitial sites are more favorable for Li. Combined with the consistent non-monotonic change in saturation magnetization, we think that indium vacancies resulting from Li-doping play an important role in inducing d0 ferromagnetism in our Li-doped In2O3 nanoparticles, and the FM coupling is mainly mediated by the LiIn-ONN-VIn-ONN-LiIn chains.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

Science.gov (United States)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6

Science.gov (United States)

Lin, Zhisheng; Lohmann, Mark; Ali, Zulfikhar A.; Tang, Chi; Li, Junxue; Xing, Wenyu; Zhong, Jiangnan; Jia, Shuang; Han, Wei; Coh, Sinisa; Beyermann, Ward; Shi, Jing

2018-05-01

The anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy-axis direction of the magnetization is inferred from the AMR saturation feature in the presence and absence of an applied pressure. At zero applied pressure, the easy axis is along the c direction or perpendicular to the layer. Upon application of a hydrostatic pressure > 1 GPa, the uniaxial anisotropy switches to easy-plane anisotropy which drives the equilibrium magnetization from the c axis to the a b plane at zero magnetic field, which amounts to a giant magnetic anisotropy energy change (> 100%). As the temperature is increased across the Curie temperature, the characteristic AMR effect gradually decreases and disappears. Our first-principles calculations confirm the giant magnetic anisotropy energy change with moderate pressure and assign its origin to the increased off-site spin-orbit interaction of Te atoms due to a shorter Cr-Te distance. Such a pressure-induced spin reorientation transition is very rare in three-dimensional ferromagnets, but it may be common to other layered ferromagnets with similar crystal structures to CGT, and therefore offers a unique way to control magnetic anisotropy.

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

International Nuclear Information System (INIS)

Hu, Chengqing; Park, Keun Woo; Yu, Edward T.; Posadas, Agham; Demkov, Alexander A.; Jordan-Sweet, Jean L.

2013-01-01

A LaCoO 3 /SrTiO 3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO 3 , leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO 3 layer on strain. Below the Curie temperature of the LaCoO 3 layer, this effect leads to modulation of resistance in LaCoO 3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO 3 . Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO 3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO 3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device

Graphene-ferromagnet interfaces: hybridization, magnetization and charge transfer.

Science.gov (United States)

Abtew, Tesfaye; Shih, Bi-Ching; Banerjee, Sarbajit; Zhang, Peihong

2013-03-07

Electronic and magnetic properties of graphene-ferromagnet interfaces are investigated using first-principles electronic structure methods in which a single layer graphene is adsorbed on Ni(111) and Co(111) surfaces. Due to the symmetry matching and orbital overlap, the hybridization between graphene pπ and Ni (or Co) d(z(2)) states is very strong. This pd hybridization, which is both spin and k dependent, greatly affects the electronic and magnetic properties of the interface, resulting in a significantly reduced (by about 20% for Ni and 10% for Co) local magnetic moment of the top ferromagnetic layer at the interface and an induced spin polarization on the graphene layer. The calculated induced magnetic moment on the graphene layer agrees well with a recent experiment. In addition, a substantial charge transfer across the graphene-ferromagnet interfaces is observed. We also investigate the effects of thickness of the ferromagnet slab on the calculated electronic and magnetic properties of the interface. The strength of the pd hybridization and the thickness-dependent interfacial properties may be exploited to design structures with desirable magnetic and transport properties for spintronic applications.

High power terahertz induced carrier multiplication in Silicon

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof

2015-01-01

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

Magnetic tunable confinement of the superconducting condensate in superconductor/ferromagnet hybrids

International Nuclear Information System (INIS)

Aladyshkin, A.Yu.; Gillijns, W.; Silhanek, A.V.; Moshchalkov, V.V.

2008-01-01

The effect of a nonuniform magnetic field induced by a ferromagnet on the magnetoresistance of thin-film superconductor/ferromagnet hybrid structures was investigated experimentally. Two different magnetic textures with out-of-plane magnetization were considered: a plain ferromagnetic film with bubble domains and a regular array of ferromagnetic dots. The stray fields of the structures are able to affect the spatial profile of the superconducting condensate, leading to a modification of the dependence of the critical temperature T c on an external magnetic field H. We showed how the standard linear T c (H) dependence with a single maximum at H=0 can be continuously transformed into so-called reentrant phase boundary with two T c peaks. We demonstrated that both domain-wall superconductivity and field-induced superconductivity are different manifestations of the magnetic confinement effect in various magnetic patterns

Proximity effects in ferromagnet/superconductor structures

International Nuclear Information System (INIS)

Yu, H.L.; Sun, G.Y.; Yang, L.Y.; Xing, D.Y.

2004-01-01

The Nambu spinor Green's function approach is applied to study proximity effects in ferromagnet/superconductor (FM/SC) structures. They include the induced superconducting order parameter and density of states (DOS) with superconducting feature on the FM side, and spin-dependent DOS within the energy gap on the SC side. The latter indicates an appearance of gapless superconductivity and a coexistence of ferromagnetism and superconductivity in a small regime near the interface. The influence of exchange energy in FM and barrier strength at interface on the proximity effects is discussed

Magnetization reversal of ferromagnetic nanoparticles induced by a stream of polarized electrons

Energy Technology Data Exchange (ETDEWEB)

Kozhushner, M.A.; Gatin, A.K.; Grishin, M.V.; Shub, B.R. [Semenov Institute of Chemical Physics of RAS, 4, Kosygin Street, Moscow 119991 (Russian Federation); Kim, V.P.; Khomutov, G.B. [Faculty of Physics, Lomonosov Moscow State University, Lenin Gory 1-2, Moscow 119991 (Russian Federation); Ilegbusi, O.J. [University of Central Florida, 4000 Central Florida Boulevard, Orlando, FL 32816-2450 (United States); Trakhtenberg, L.I. [Semenov Institute of Chemical Physics of RAS, 4, Kosygin Street, Moscow 119991 (Russian Federation)

2016-09-15

The remagnetization of ferromagnetic Fe{sub 3}O{sub 4} nanoparticles of several thousand cubic nanometers by spin-polarized current is investigated. For this purpose, magnetite nanoparticles are synthesized and deposited on a conductive nonmagnetic substrate. The remagnetization is conducted in high-vacuum scanning tunneling microscope (STM). The STM tip from magnetized iron wire constitutes one electrode while the ferromagnetic nanoparticle on the graphite surface represents the second electrode. The measured threshold value of remagnetization current (I{sub thresh}=9 nA) is the lowest value of current at which remagnetization occurs. The change in nanoparticle magnetization is detected by the effect of giant magnetic resistance, specifically, the dependence of the weak polarized current (Iferromagnetic nanoclusters. The peculiarities of size dependence of the observed effects are explained. - Highlights: • Ferromagnetic nanoparticle in STM with ferromagnetic tip. • Change of the direction of nanoparticle magnetization by current I>I{sub cr}=9 nA. • GMR effect used to control change of magnetization.

Dynamical response of vibrating ferromagnets

CERN Document Server

Gaganidze, E; Ziese, M

2000-01-01

The resonance frequency of vibrating ferromagnetic reeds in a homogeneous magnetic field can be substantially modified by intrinsic and extrinsic field-related contributions. Searching for the physical reasons of the field-induced resonance frequency change and to study the influence of the spin glass state on it, we have measured the low-temperature magnetoelastic behavior and the dynamical response of vibrating amorphous and polycrystalline ferromagnetic ribbons. We show that the magnetoelastic properties depend strongly on the direction of the applied magnetic field. The influence of the re-entrant spin glass transition on these properties is discussed. We present clear experimental evidence that for applied fields perpendicular to the main area of the samples the behavior of ferromagnetic reeds is rather independent of the material composition and magnetic state, exhibiting a large decrease of the resonance frequency. This effect can be very well explained with a model based on the dynamical response of t...

Magnetic memory signals variation induced by applied magnetic field and static tensile stress in ferromagnetic steel

International Nuclear Information System (INIS)

Huang, Haihong; Yang, Cheng; Qian, Zhengchun; Han, Gang; Liu, Zhifeng

2016-01-01

Stress can induce a spontaneous magnetic field in ferromagnetic steel under the excitation of geomagnetic field. In order to investigate the impact of applied magnetic field and tensile stress on variation of the residual magnetic signals on the surface of ferromagnetic materials, static tensile tests of Q235 structural steel were carried out, with the normal component of the residual magnetic signals, H p (y), induced by applied magnetic fields with different intensities measured through the tensile tests. The H p (y), its slope coefficient K S and maximum gradient K max changing with the applied magnetic field H and tensile stress were observed. Results show that the magnitude of H p (y) and its slope coefficient K S increase linearly with the increase of stress in the elastic deformation stage. Under yield stress, H p (y) and K S reach its maximum, and then decrease slightly with further increase of stress. Applied magnetic field affects the magnitude of H p (y) instead of changing the signal curve′s profile; and the magnitude of H p (y), K S , K max and the change rate of K S increase with the increase of applied magnetic field. The phenomenon is also discussed from the viewpoint of magnetic charge in ferromagnetic materials. - Highlights: • We investigated how applied magnetic field and tensile stress impact H p (y) signals. • Magnitude of H p (y), K S and K max increase with the increase of applied magnetic field. • Both applied magnetic field and tensile stress impact material magnetic permeability. • Applied magnetic field can help to evaluate the stress distribution of components.

Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles

Science.gov (United States)

Xue, Xudong; Liu, Liangliang; Wang, Zhu; Wu, Yichu

2014-01-01

The effect of hydrogen doping on the magnetic properties of ZnO nanoparticles was investigated. Hydrogen was incorporated by annealing under 5% H2 in Ar ambient at 700 °C. Room-temperature ferromagnetism was induced in hydrogenated ZnO nanoparticles, and the observed ferromagnetism could be switched between "on" and "off" states through hydrogen annealing and oxygen annealing process, respectively. It was found that Zn vacancy and OH bonding complex (VZn + OH) was crucial to the observed ferromagnetism by using the X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis. Based on first-principles calculations, VZn + OH was favorable to be presented due to the low formation energy. Meanwhile, this configuration could lead to a magnetic moment of 0.57 μB. The Raman and photoluminescence measurements excluded the possibility of oxygen vacancy as the origin of the ferromagnetism.

Ferromagnetic clusters induced by a nonmagnetic random disorder in diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Bui, Dinh-Hoi [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam); Physics Department, Hue University’s College of Education, 34 Le Loi, Hue (Viet Nam); Phan, Van-Nham, E-mail: phanvannham@dtu.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

2016-12-15

In this work, we analyze the nonmagnetic random disorder leading to a formation of ferromagnetic clusters in diluted magnetic semiconductors. The nonmagnetic random disorder arises from randomness in the host lattice. Including the disorder to the Kondo lattice model with random distribution of magnetic dopants, the ferromagnetic–paramagnetic transition in the system is investigated in the framework of dynamical mean-field theory. At a certain low temperature one finds a fraction of ferromagnetic sites transiting to the paramagnetic state. Enlarging the nonmagnetic random disorder strength, the paramagnetic regimes expand resulting in the formation of the ferromagnetic clusters.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

Energy Technology Data Exchange (ETDEWEB)

Pasanai, K., E-mail: krisakronmsu@gmail.com

2017-01-15

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

International Nuclear Information System (INIS)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

Ferromagnetism in the two-dimensional periodic Anderson model

International Nuclear Information System (INIS)

Batista, C. D.; Bonca, J.; Gubernatis, J. E.

2001-01-01

Using the constrained-path Monte Carlo method, we studied the magnetic properties of the two-dimensional periodic Anderson model for electron fillings between 1/4 and 1/2. We also derived two effective low-energy theories to assist in interpreting the numerical results. For 1/4 filling, we found that the system can be a Mott or a charge-transfer insulator, depending on the relative values of the Coulomb interaction and the charge-transfer gap between the two noninteracting bands. The insulator may be a paramagnet or antiferromagnet. We concentrated on the effect of electron doping on these insulating phases. Upon doping we obtained a partially saturated ferromagnetic phase for low concentrations of conduction electrons. If the system were a charge-transfer insulator, we would find that the ferromagnetism is induced by the well-known Ruderman-Kittel-Kasuya-Yosida interaction. However, we found a novel correlated hopping mechanism inducing the ferromagnetism in the region where the nondoped system is a Mott insulator. Our regions of ferromagnetism spanned a much smaller doping range than suggested by recent slave boson and dynamical mean-field theory calculations, but they were consistent with that obtained by density-matrix renormalization group calculations of the one-dimensional periodic Anderson model

Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

Science.gov (United States)

Xiao, Xiang-Bo; Liu, Bang-Gui

2018-03-01

It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

Ferroelectricity with Ferromagnetic Moment in Orthoferrites

Science.gov (United States)

Tokunaga, Yusuke

2010-03-01

Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao

2017-04-12

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

2017-01-01

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Possible mechanism for d0 ferromagnetism mediated by intrinsic defects

KAUST Repository

Zhang, Zhenkui

2014-01-01

We examine the effects of several intrinsic defects on the magnetic behavior of ZnS nanostructures using hybrid density functional theory to gain insights into d0 ferromagnetism. Previous studies have predicted that the magnetism is due to a coupling between partially filled defect states. By taking into account the electronic correlations, we find an additional splitting of the defect states in Zn vacancies and thus the possibility of gaining energy by preferential filling of hole states, establishing ferromagnetism between spin polarized S 3p holes. We demonstrate a crucial role of neutral S vacancies in promoting ferromagnetism between positively charged S vacancies. S dangling bonds on the nanoparticle surface also induce ferromagnetism. This journal is

Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles

International Nuclear Information System (INIS)

Xue, Xudong; Liu, Liangliang; Wang, Zhu; Wu, Yichu

2014-01-01

The effect of hydrogen doping on the magnetic properties of ZnO nanoparticles was investigated. Hydrogen was incorporated by annealing under 5% H 2 in Ar ambient at 700 °C. Room-temperature ferromagnetism was induced in hydrogenated ZnO nanoparticles, and the observed ferromagnetism could be switched between “on” and “off” states through hydrogen annealing and oxygen annealing process, respectively. It was found that Zn vacancy and OH bonding complex (V Zn  + OH) was crucial to the observed ferromagnetism by using the X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis. Based on first-principles calculations, V Zn  + OH was favorable to be presented due to the low formation energy. Meanwhile, this configuration could lead to a magnetic moment of 0.57 μ B . The Raman and photoluminescence measurements excluded the possibility of oxygen vacancy as the origin of the ferromagnetism

Investigating spin-transfer torques induced by thermal gradients in magnetic tunnel junctions by using micro-cavity ferromagnetic resonance

Science.gov (United States)

Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.

2018-06-01

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6  ×  9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

Science.gov (United States)

Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

2008-07-01

In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

Thermal and particle size distribution effects on the ferromagnetic resonance in magnetic fluids

International Nuclear Information System (INIS)

Marin, C.N.

2006-01-01

Thermal and particle size distribution effects on the ferromagnetic resonance of magnetic fluids were theoretically investigated, assuming negligible interparticle interactions and neglecting the viscosity of the carrier liquid. The model is based on the usual approach for the ferromagnetic resonance description of single-domain magnetic particle systems, which was amended in order to take into account the finite particle size effect, the particle size distribution and the orientation mobility of the particles within the magnetic fluid. Under these circumstances the shape of the resonance line, the resonance field and the line width are found to be strongly affected by the temperature and by the particle size distribution of magnetic fluids

Magnetic memory signals variation induced by applied magnetic field and static tensile stress in ferromagnetic steel

Energy Technology Data Exchange (ETDEWEB)

Huang, Haihong, E-mail: huanghaihong@hfut.edu.cn; Yang, Cheng; Qian, Zhengchun; Han, Gang; Liu, Zhifeng

2016-10-15

Stress can induce a spontaneous magnetic field in ferromagnetic steel under the excitation of geomagnetic field. In order to investigate the impact of applied magnetic field and tensile stress on variation of the residual magnetic signals on the surface of ferromagnetic materials, static tensile tests of Q235 structural steel were carried out, with the normal component of the residual magnetic signals, H{sub p}(y), induced by applied magnetic fields with different intensities measured through the tensile tests. The H{sub p}(y), its slope coefficient K{sub S} and maximum gradient K{sub max} changing with the applied magnetic field H and tensile stress were observed. Results show that the magnitude of H{sub p}(y) and its slope coefficient K{sub S} increase linearly with the increase of stress in the elastic deformation stage. Under yield stress, H{sub p}(y) and K{sub S} reach its maximum, and then decrease slightly with further increase of stress. Applied magnetic field affects the magnitude of H{sub p}(y) instead of changing the signal curve′s profile; and the magnitude of H{sub p}(y), K{sub S}, K{sub max} and the change rate of K{sub S} increase with the increase of applied magnetic field. The phenomenon is also discussed from the viewpoint of magnetic charge in ferromagnetic materials. - Highlights: • We investigated how applied magnetic field and tensile stress impact H{sub p}(y) signals. • Magnitude of H{sub p}(y), K{sub S} and K{sub max} increase with the increase of applied magnetic field. • Both applied magnetic field and tensile stress impact material magnetic permeability. • Applied magnetic field can help to evaluate the stress distribution of components.

Room-temperature ferromagnetism in hydrogenated ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Xue, Xudong; Liu, Liangliang; Wang, Zhu; Wu, Yichu, E-mail: ycwu@whu.edu.cn [School of Physics and Technology, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan 430072 (China)

2014-01-21

The effect of hydrogen doping on the magnetic properties of ZnO nanoparticles was investigated. Hydrogen was incorporated by annealing under 5% H{sub 2} in Ar ambient at 700 °C. Room-temperature ferromagnetism was induced in hydrogenated ZnO nanoparticles, and the observed ferromagnetism could be switched between “on” and “off” states through hydrogen annealing and oxygen annealing process, respectively. It was found that Zn vacancy and OH bonding complex (V{sub Zn} + OH) was crucial to the observed ferromagnetism by using the X-ray photoelectron spectroscopy and positron annihilation spectroscopy analysis. Based on first-principles calculations, V{sub Zn} + OH was favorable to be presented due to the low formation energy. Meanwhile, this configuration could lead to a magnetic moment of 0.57 μ{sub B}. The Raman and photoluminescence measurements excluded the possibility of oxygen vacancy as the origin of the ferromagnetism.

Competing exchange bias and field-induced ferromagnetism in La-doped BaFe O3

Science.gov (United States)

Fita, I.; Wisniewski, A.; Puzniak, R.; Iwanowski, P.; Markovich, V.; Kolesnik, S.; Dabrowski, B.

2017-04-01

An exchange bias (EB) effect was observed in mixed valent L axB a1 -xFe O3 (x =0.125 , 0.25, 0.33) perovskites exhibiting the antiferromagnetic (AFM) helical order among F e4 + ions coexisting with the ferromagnetic (FM) cluster phase in the ground state. The L a3 + ions for B a2 + site substitution, associated with increase in number of the AFM coupled F e3 + - F e4 + pairs as well as some F e3 + - F e3 + pairs, leads to strengthening of the AFM phase and consequently to the alteration of the EB characteristics, which depend on level of the La doping x . At low doping x ≤0.25 , an abnormal dependence of the EB field, HEB, on the cooling field, Hcool, was found. The HEB increases rapidly with increasing cooling field at low Hcool, but it falls suddenly at cooling fields higher than 20 kOe, reducing by an order of magnitude at 90 kOe. The suppression of EB is caused by the field-induced increased volume of the FM phase, due to the transformation of the AFM helical spin structure into the FM one. Thus, low-doped L axB a1 -xFe O3 demonstrates a competition of two alternate cooling-field-induced effects, one of which leads to the EB anisotropy and another one to the enhanced ferromagnetism. In contrast, the x =0.33 sample, having a strong AFM constituent, shows no field-induced FM and no drop in the EB field. Accordingly, the HEB vs Hcool dependence was found to be well explained in the framework of a model describing phase-separated AFM-FM systems, namely, the model assuming isolated FM clusters of size ˜4 nm embedded in the AFM matrix.

Room temperature ferromagnetism in magic-sized Cr-doped CdS diluted magnetic semiconducting quantum dots

International Nuclear Information System (INIS)

Srivastava, Punita; Kumar, Pushpendra; Singh, Kedar

2011-01-01

Manipulation of carrier spins in semiconductors for spintronics applications has received great attention driven by improved functionalities and higher speed operation. Doping of semiconductor nanocrystals by transition-metal ions pronounced as diluted magnetic semiconductors (DMS) has attracted tremendous attention. Such doping is, however, difficult to achieve in low-dimensional strongly quantum-confined nanostructures by conventional growth procedures. In the present case, magic-sized, pure, and Cr-doped CdS DM-QDs have been synthesized by solution phase chemistry (lyothermal method). Structural, optical, and magnetic investigation suggest an intrinsic nature of ferromagnetism with highly quantum-confined system. Optical and magnetic results of pure and doped QDs reveal major physical consequences of dopant localization within the capacity to engineer dopant-carrier exchange interactions introducing magnetic functionalities within the host semiconductor lattice. Unpaired Cr ions in Cd substitutional sites could create spin ordering and ferromagnetic coupling. The results presented herein illustrate some of the remarkable and unexpected complexities that can arise in doped QDs.

Half-metallic ferromagnetism in Cu-doped zinc-blende ZnO from first principles study

International Nuclear Information System (INIS)

Li, X.F.; Zhang, J.; Xu, B.; Yao, K.L.

2012-01-01

Electronic structures and magnetism of Cu-doped zinc-blende ZnO have been investigated by the first-principle method based on density functional theory (DFT). The results show that Cu can induce stable ferromagnetic ground state. The magnetic moment of supercell including single Cu atom is 1.0 μ B . Electronic structure shows that Cu-doped zinc-blende ZnO is a p-type half-metallic ferromagnet. The half-metal property is mainly attribute to the crystal field splitting of Cu 3d orbital, and the ferromagnetism is dominated by the hole-mediated double exchange mechanism. Therefore, Cu-doped zinc-blende ZnO should be useful in semiconductor spintronics and other applications. - Highlights: → Magnetism of Cu-doped zinc-blende ZnO. → Cu-doped zinc-blende ZnO shows interesting half-metal character. → Total energies calculations reveal that Cu can induce ferromagnetic ground state. → Ferromagnetism dominated by the hole-mediated double exchange mechanism.

Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

Energy Technology Data Exchange (ETDEWEB)

Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

2007-07-01

Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO{sub 3}/SrTiO{sub 3} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Hu, Chengqing; Park, Keun Woo; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 1 University Station C1600, Austin, Texas 78712 (United States); Jordan-Sweet, Jean L. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2013-11-14

A LaCoO{sub 3}/SrTiO{sub 3} heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO{sub 3}, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO{sub 3} layer on strain. Below the Curie temperature of the LaCoO{sub 3} layer, this effect leads to modulation of resistance in LaCoO{sub 3} as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO{sub 3}. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO{sub 3} layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO{sub 3} grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.

Conductivity of Weakly Disordered Metals Close to a "Ferromagnetic" Quantum Critical Point

Science.gov (United States)

Kastrinakis, George

2018-05-01

We calculate analytically the conductivity of weakly disordered metals close to a "ferromagnetic" quantum critical point in the low-temperature regime. Ferromagnetic in the sense that the effective carrier potential V(q,ω ), due to critical fluctuations, is peaked at zero momentum q=0. Vertex corrections, due to both critical fluctuations and impurity scattering, are explicitly considered. We find that only the vertex corrections due to impurity scattering, combined with the self-energy, generate appreciable effects as a function of the temperature T and the control parameter a, which measures the proximity to the critical point. Our results are consistent with resistivity experiments in several materials displaying typical Fermi liquid behaviour, but with a diverging prefactor of the T^2 term for small a.

Transforming from paramagnetism to room temperature ferromagnetism in CuO by ball milling

Directory of Open Access Journals (Sweden)

Daqiang Gao

2011-12-01

Full Text Available In this work, we experimentally demonstrate that it is possible to induce ferromagnetism in CuO by ball milling without any ferromagnetic dopant. The magnetic measurements indicate that paramagnetic CuO is driven to the ferromagnetic state at room temperature by ball milling gradually. The saturation magnetization of the milled powders is found to increase with expanding the milling time and then decrease by annealing under atmosphere. The fitted X-ray photoelectron spectroscopy results indicate that the observed induction and weaken of the ferromagnetism shows close relationship with the valence charged oxygen vacancies (Cu1+-VO in CuO.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS_{2}.

Science.gov (United States)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J; Schuck, P James

2017-08-25

Optoelectronic excitations in monolayer MoS_{2} manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena-critical to both many-body physics exploration and device applications-presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS2

Science.gov (United States)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S.; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J.; Schuck, P. James

2017-08-01

Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena—critical to both many-body physics exploration and device applications—presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Ferromagnetism and interlayer exchange coupling in thin metallic films

Energy Technology Data Exchange (ETDEWEB)

Kienert, Jochen

2008-07-15

This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

Edge passivation induced single-edge ferromagnetism of zigzag MoS_2 nanoribbons

International Nuclear Information System (INIS)

Wang, Rui; Sun, Hui; Ma, Ben; Hu, Jingguo; Pan, Jing

2017-01-01

We performed density functional theory study on electronic structure, magnetic properties and stability of zigzag MoS_2 nanoribbons (ZMoS_2NRs) with and without oxygen (O) passivation. The bare ZMoS_2NRs are magnetic metal with ferromagnetic edge states, edge passivation decreases their magnetism because of the decrease of edge unsaturated electrons. Obviously, the electronic structure and magnetic properties of ZMoS_2NRs greatly depend on edge states. When both edges are passivated by O atoms, ZMoS_2NRs are nonmagnetic metals. When either edge is passivated by O atoms, the systems exhibit single-edge ferromagnetism and magnetism concentrates on the non-passivated edge. Edge passivation can not only tune the magnetism of ZMoS_2NRs, but also enhance their stability by eliminating dangling bonds. These interesting findings on ZMoS_2NRs may open the possibility of their application in nanodevices and spintronics. - Highlights: • Edge passivation for tuning magnetism of zigzag MoS_2 nanoribbons (ZMoS_2NRs) is proposed. • Edge passivation can tune ZMoS_2NRs from nonmagnetic metal to ferromagnetic metal. • When either edge is passivated, the systems exhibit single-edge ferromagnetic states. • These findings may inspire great interest in the community of ZMoS_2NRs and motivate numerous experimental researches.

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

International Nuclear Information System (INIS)

Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

2016-01-01

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic / superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic/superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

First-principles calculations of GaN:Gd nanowires: Carbon-dopants-induced room-temperature ferromagnetism

Directory of Open Access Journals (Sweden)

Ruikuan Xie

2017-11-01

Full Text Available First-principle calculations of the electronic structure and magnetic interaction of C-Gd co-doped GaN nanowires have been performed. The room-temperature ferromagnetism in GaN:Gd nanowires is observed after the substitution of N atoms by C atoms. A p-d coupling is considered as the reason of the observed ferromagnetism. The striking feature is that such coupling is effected greatly by the position where the C atoms dope in. As the C-Gd distance increases this coupling decreases and the system won’t gain enough energy to stabilize the ferromagnetism.

Ferromagnetic shape memory materials

Science.gov (United States)

Tickle, Robert Jay

Ferromagnetic shape memory materials are a new class of active materials which combine the properties of ferromagnetism with those of a diffusionless, reversible martensitic transformation. These materials have been the subject of recent study due to the unusually large magnetostriction exhibited in the martensitic phase. In this thesis we report the results of experiments which characterize the magnetic and magnetomechanical properties of both austenitic and martensitic phases of ferromagnetic shape memory material Ni2MnGa. In the high temperature cubic phase, anisotropy and magnetostriction constants are determined for a range of temperatures from 50°C down to the transformation temperature, with room temperature values of K1 = 2.7 +/- 104 ergs/cm3 and lambda100 = -145 muepsilon. In the low temperature tetragonal phase, the phenomenon of field-induced variant rearrangement is shown to produce anomalous results when traditional techniques for determining anisotropy and magnetostriction properties are employed. The requirement of single variant specimen microstructure is explained, and experiments performed on such a specimen confirm a uniaxial anisotropy within each martensitic variant with anisotropy constant Ku = 2.45 x 106 ergs/cm3 and a magnetostriction constant of lambdasv = -288 +/- 73 muepsilon. A series of magnetomechanical experiments investigate the effects of microstructure bias, repeated field cycling, varying field ramp rate, applied load, and specimen geometry on the variant rearrangement phenomenon in the martensitic phase. In general, the field-induced strain is found to be a function of the variant microstructure. Experiments in which the initial microstructure is biased towards a single variant state with an applied load generate one-time strains of 4.3%, while those performed with a constant bias stress of 5 MPa generate reversible strains of 0.5% over a period of 50 cycles. An increase in the applied field ramp rate is shown to reduce the

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-05-09

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Spin-dependent dwell time through ferromagnetic graphene barrier

International Nuclear Information System (INIS)

Sattari, F.

2014-01-01

We investigated the dwell time of electrons tunneling through a ferromagnetic (FM) graphene barrier. The results show that the spin polarization can be efficiently controlled by the barrier width, barrier height, and the incident electron energy. Furthermore, it is found that electrons with different spin orientations will spend different times through the barrier. The difference of the dwell time between spin-up and spin-down electrons arises from the exchange splitting, which is induced by the FM strip. Study results indicate that a ferromagnetic graphene barrier can cause a nature spin filter mechanism in the time domain

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien

2018-01-29

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien; Miron, I. M.; Jungwirth, T.; Sinova, J.; Zelezný , J.; Thiaville, A.; Garello, K.; Gambardella, P.

2018-01-01

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Time evolution of a new superconducting state in long ferromagnetic superconductors

International Nuclear Information System (INIS)

Dharmadurai, G.

1980-01-01

We examine the unique features associated with the onset of a time dependent superconducting state in long reentrant ferromagnetic superconductors due to the self-heating induced breakdown of the ferromagnetic normal state. After solving the relevant one-dimensional heat flow equations in an analytic approximation we estimate the duration of the resulting metastable superconducting state and discuss the qualitative aspects of the temporal behaviour of this new superconducting state. (orig.)

d° Ferromagnetism of Magnesium Oxide

Directory of Open Access Journals (Sweden)

Jitendra Pal Singh

2017-11-01

Full Text Available Magnetism without d-orbital electrons seems to be unrealistic; however, recent observations of magnetism in non-magnetic oxides, such as ZnO, HfO2, and MgO, have opened new avenues in the field of magnetism. Magnetism exhibited by these oxides is known as d° ferromagnetism, as these oxides either have completely filled or unfilled d-/f-orbitals. This magnetism is believed to occur due to polarization induced by p-orbitals. Magnetic polarization in these oxides arises due to vacancies, the excitation of trapped spin in the triplet state. The presence of vacancies at the surface and subsurface also affects the magnetic behavior of these oxides. In the present review, origins of magnetism in magnesium oxide are discussed to obtain understanding of d° ferromagnetism.

Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

Directory of Open Access Journals (Sweden)

Yi-Dong Luo

2013-01-01

Full Text Available Ni1−xFexO nanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

Evaluation of ferromagnetic fluids and suspensions for the site-specific radiofrequency-induced hyperthermia of MX11 sarcoma cells in vitro

Energy Technology Data Exchange (ETDEWEB)

Brusentsov, Nikolai A.; Gogosov, V.V.; Brusentsova, T.N.; Sergeev, A.V.; Jurchenko, N.Y.; Kuznetsov, Anatoly A.; Kuznetsov, Oleg A. E-mail: oleg@louisiana.edu; Shumakov, L.I

2001-07-01

Seventeen different ferromagnetic fluids and suspensions were prepared and evaluated for application in radiofrequency-induced hyperthermia. Specific power absorption rates were measured at 0.88 MHz to range from 0 to 240 W per gram of iron for different preparations. Survival of MX11 cells mixed with ferrofluids and subjected to radiofrequency was much lower than with RF without ferrofluid or ferrofluid alone.

Evaluation of ferromagnetic fluids and suspensions for the site-specific radiofrequency-induced hyperthermia of MX11 sarcoma cells in vitro

International Nuclear Information System (INIS)

Brusentsov, Nikolai A.; Gogosov, V.V.; Brusentsova, T.N.; Sergeev, A.V.; Jurchenko, N.Y.; Kuznetsov, Anatoly A.; Kuznetsov, Oleg A.; Shumakov, L.I.

2001-01-01

Seventeen different ferromagnetic fluids and suspensions were prepared and evaluated for application in radiofrequency-induced hyperthermia. Specific power absorption rates were measured at 0.88 MHz to range from 0 to 240 W per gram of iron for different preparations. Survival of MX11 cells mixed with ferrofluids and subjected to radiofrequency was much lower than with RF without ferrofluid or ferrofluid alone

Nonthermal Photocoercivity Effect in Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

Science.gov (United States)

Kiessling, T.; Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

2011-12-01

We report a photoinduced change of the coercive field of a low doped Ga1-xMnxAs ferromagnetic semiconductor under very low intensity illumination. This photocoercivity effect (PCE) is local and reversible, which enables the controlled formation of localized magnetization domains. The PCE arises from a light induced lowering of the domain wall pinning energy as confirmed by test experiments on high doped, fully metallic ferromagnetic Ga1-xMnxAs.

Thermal induced carrier's transfer in bimodal size distribution InAs/GaAs quantum dots

Science.gov (United States)

Ilahi, B.; Alshehri, K.; Madhar, N. A.; Sfaxi, L.; Maaref, H.

2018-06-01

This work reports on the investigation of the thermal induced carriers' transfer mechanism in vertically stacked bimodal size distribution InAs/GaAs quantum dots (QD). A model treating the QD as a localized states ensemble (LSE) has been employed to fit the atypical temperature dependence of the photoluminescence (PL) emission energies and linewidth. The results suggest that thermally activated carriers transfer within the large size QD family occurs through the neighboring smaller size QD as an intermediate channel before direct carriers redistribution. The obtained activation energy suggests also the possible contribution of the wetting layer (WL) continuum states as a second mediator channel for carriers transfer.

Spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor junctions

International Nuclear Information System (INIS)

Li Hong; Yang Wei; Yang Xinjian; Qin Minghui; Xu Yihong

2007-01-01

Taking into account the thickness of the ferromagnetic insulator (FI), the spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the sub-energy gap conductance peaks and the spin polarization in the ferromagnetic insulator causes an imbalance of the peak heights. Different from the ferromagnet the spin-filtering effect of the FI cannot cause the reversion of the normalized conductance in NM/FI/NM/SC junctions

Molecular ferromagnetism

International Nuclear Information System (INIS)

Epstein, A.J.

1990-01-01

This past year has been one of substantial advancement in both the physics and chemistry of molecular and polymeric ferromagnets. The specific heat studies of (DMeFc)(TCNE) have revealed a cusp at the three-dimensional ferromagnetic transition temperature with a crossover to primarily 1-D behavior at higher temperatures. This paper discusses these studies

(Ga,Fe)Sb: A p-type ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

2014-09-29

A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

Ferromagnetic quantum critical fluctuations and anomalous coexistence of ferromagnetism and superconductivity in UCoGe revealed by Co-NMR and NQR studies

International Nuclear Information System (INIS)

Ohta, Tetsuya; Nakai, Yusuke; Ihara, Yoshihiko; Ishida, Kenji; Deguchi, Kazuhiko; Sato, Noriaki K.; Satoh, Isamu

2008-01-01

Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) studies were carried out for the recently discovered UCoGe, in which the ferromagnetic and superconducting (SC) transitions are reported to occur at T Curie - 3 K and T S - 0.8 K, in order to investigate the coexistence of ferromagnetism and superconductivity as well as the normal-state and SC properties from a microscopic point of view. From the nuclear spin-lattice relaxation rate 1/T 1 and Knight-shift measurements, we confirm that ferromagnetic fluctuations that possess a quantum critical character are present above T Curie and also the occurrence of a ferromagnetic transition at 2.5 K in our polycrystalline sample. The magnetic fluctuations in the normal state show that UCoGe is an itinerant ferromagnet similar to ZrZn 2 and YCo 2 . The onset SC transition is identified at T S - 0.7 K, below which 1/T 1 arising from 30% of the volume fraction starts to decrease due to the opening of the SC gap. This component of 1/T 1 , which follows a T 3 dependence in the temperature range 0.3-0.1 K, coexists with the magnetic components of 1/T 1 showing a √T dependence below T S . From the NQR measurements in the SC state, we suggest that the self-induced vortex state is realized in UCoGe. (author)

Dirac Magnons in Honeycomb Ferromagnets

Directory of Open Access Journals (Sweden)

Sergey S. Pershoguba

2018-01-01

Full Text Available The discovery of the Dirac electron dispersion in graphene [A. H. Castro Neto, et al., The Electronic Properties of Graphene, Rev. Mod. Phys. 81, 109 (2009RMPHAT0034-686110.1103/RevModPhys.81.109] led to the question of the Dirac cone stability with respect to interactions. Coulomb interactions between electrons were shown to induce a logarithmic renormalization of the Dirac dispersion. With a rapid expansion of the list of compounds and quasiparticle bands with linear band touching [T. O. Wehling, et al., Dirac Materials, Adv. Phys. 63, 1 (2014ADPHAH0001-873210.1080/00018732.2014.927109], the concept of bosonic Dirac materials has emerged. We consider a specific case of ferromagnets consisting of van der Waals-bonded stacks of honeycomb layers, e.g., chromium trihalides CrX_{3} (X=F, Cl, Br and I, that display two spin wave modes with energy dispersion similar to that for the electrons in graphene. At the single-particle level, these materials resemble their fermionic counterparts. However, how different particle statistics and interactions affect the stability of Dirac cones has yet to be determined. To address the role of interacting Dirac magnons, we expand the theory of ferromagnets beyond the standard Dyson theory [F. J. Dyson, General Theory of Spin-Wave Interactions, Phys. Rev. 102, 1217 (1956PHRVAO0031-899X10.1103/PhysRev.102.1217, F. J. Dyson, Thermodynamic Behavior of an Ideal Ferromagnet, Phys. Rev. 102, 1230 (1956PHRVAO0031-899X10.1103/PhysRev.102.1230] to the case of non-Bravais honeycomb layers. We demonstrate that magnon-magnon interactions lead to a significant momentum-dependent renormalization of the bare band structure in addition to strongly momentum-dependent magnon lifetimes. We show that our theory qualitatively accounts for hitherto unexplained anomalies in nearly half-century-old magnetic neutron-scattering data for CrBr_{3} [W. B. Yelon and R. Silberglitt, Renormalization of Large-Wave-Vector Magnons in

Dirac Magnons in Honeycomb Ferromagnets

Science.gov (United States)

Pershoguba, Sergey S.; Banerjee, Saikat; Lashley, J. C.; Park, Jihwey; Ågren, Hans; Aeppli, Gabriel; Balatsky, Alexander V.

2018-01-01

The discovery of the Dirac electron dispersion in graphene [A. H. Castro Neto, et al., The Electronic Properties of Graphene, Rev. Mod. Phys. 81, 109 (2009), 10.1103/RevModPhys.81.109] led to the question of the Dirac cone stability with respect to interactions. Coulomb interactions between electrons were shown to induce a logarithmic renormalization of the Dirac dispersion. With a rapid expansion of the list of compounds and quasiparticle bands with linear band touching [T. O. Wehling, et al., Dirac Materials, Adv. Phys. 63, 1 (2014), 10.1080/00018732.2014.927109], the concept of bosonic Dirac materials has emerged. We consider a specific case of ferromagnets consisting of van der Waals-bonded stacks of honeycomb layers, e.g., chromium trihalides CrX3 (X =F , Cl, Br and I), that display two spin wave modes with energy dispersion similar to that for the electrons in graphene. At the single-particle level, these materials resemble their fermionic counterparts. However, how different particle statistics and interactions affect the stability of Dirac cones has yet to be determined. To address the role of interacting Dirac magnons, we expand the theory of ferromagnets beyond the standard Dyson theory [F. J. Dyson, General Theory of Spin-Wave Interactions, Phys. Rev. 102, 1217 (1956), 10.1103/PhysRev.102.1217, F. J. Dyson, Thermodynamic Behavior of an Ideal Ferromagnet, Phys. Rev. 102, 1230 (1956), 10.1103/PhysRev.102.1230] to the case of non-Bravais honeycomb layers. We demonstrate that magnon-magnon interactions lead to a significant momentum-dependent renormalization of the bare band structure in addition to strongly momentum-dependent magnon lifetimes. We show that our theory qualitatively accounts for hitherto unexplained anomalies in nearly half-century-old magnetic neutron-scattering data for CrBr3 [W. B. Yelon and R. Silberglitt, Renormalization of Large-Wave-Vector Magnons in Ferromagnetic CrBr3 Studied by Inelastic Neutron Scattering: Spin-Wave Correlation

Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

Science.gov (United States)

Stamopoulos, D; Aristomenopoulou, E

2015-08-26

Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

Explanation of ferromagnetism origin in C-doped ZnO by first principle calculations

International Nuclear Information System (INIS)

El Amiri, A.; Lassri, H.; Hlil, E.K.; Abid, M.

2015-01-01

By ab-initio calculations, we systematically study possible source of ferromagnetism C-doped ZnO compound. The electronic structure and magnetic properties of C-doped ZnO with / without ZnO host and C defects were investigated using the Korringa–Kohn–Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that Zn vacancy and presence of C defects (substitutional, interstitial or combination of both) induce the ferromagnetism in C-doped ZnO. From density of state (DOS) analysis, we show that p–p interaction between C atoms and/or C and O atoms is the mechanism of ferromagnetic coupling in C-doped ZnO. - Highlights: • We study the effect of ZnO host and C defects on ferromagnetism in C-doped ZnO. • Details of KKR method calculations performed to investigate both magnetic and electronic structures. • Magnetic moments, total and partial DOS for C-doped ZnO are well calculated and discussed. • Based on DOS calculations we interpret a origin of ferromagnetism in C-doped ZnO. • Mechanism of ferromagnetic coupling is well proposed

Explanation of ferromagnetism origin in C-doped ZnO by first principle calculations

Energy Technology Data Exchange (ETDEWEB)

El Amiri, A., E-mail: aelamiri@casablanca.ma [Laboratoire de Physique Fondamentale et Appliquée (LPFA), Faculté des Sciences Ain Chock, Université Hassan II, B.P. 5366 Mâarif, Casablanca, Maroc (Morocco); Lassri, H. [Laboratoire de Physique des Matériaux, Micro-électronique, Automatique et Thermique (LPMMAT). Faculté des Sciences Ain Chock, Université Hassan II, B.P. 5366 Mâarif, Casablanca, Maroc (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France); Abid, M. [Laboratoire de Physique Fondamentale et Appliquée (LPFA), Faculté des Sciences Ain Chock, Université Hassan II, B.P. 5366 Mâarif, Casablanca, Maroc (Morocco)

2015-01-15

By ab-initio calculations, we systematically study possible source of ferromagnetism C-doped ZnO compound. The electronic structure and magnetic properties of C-doped ZnO with / without ZnO host and C defects were investigated using the Korringa–Kohn–Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that Zn vacancy and presence of C defects (substitutional, interstitial or combination of both) induce the ferromagnetism in C-doped ZnO. From density of state (DOS) analysis, we show that p–p interaction between C atoms and/or C and O atoms is the mechanism of ferromagnetic coupling in C-doped ZnO. - Highlights: • We study the effect of ZnO host and C defects on ferromagnetism in C-doped ZnO. • Details of KKR method calculations performed to investigate both magnetic and electronic structures. • Magnetic moments, total and partial DOS for C-doped ZnO are well calculated and discussed. • Based on DOS calculations we interpret a origin of ferromagnetism in C-doped ZnO. • Mechanism of ferromagnetic coupling is well proposed.

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang

2017-12-16

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang; Weng, Yakui; Yin, Xinmao; Yu, Xiaojiang; Sarath Kumar, S. R.; Wehbe, Nimer; Wu, Haijun; Alshareef, Husam N.; Pennycook, Stephen J.; Breese, Mark B. H.; Chen, Jingsheng; Dong, Shuai; Wu, Tao

2017-01-01

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

2015-12-15

Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

Ferromagnetism of Pd(001) substrate induced by antiferromagnetic CoO

Energy Technology Data Exchange (ETDEWEB)

Saha, Srijan Kumar, E-mail: sksaha@mpi-halle.mpg.de; Stepanyuk, Valeri S.; Kirschner, Jürgen

2014-11-14

Our first-principles study has revealed unexpected spin polarization of the Pd(001) substrate in contact with antiferromagnetic CoO overlayers. We give an evidence that the ferromagnetism of Pd is caused by the zigzag positions of Co atoms with respect to the Pd interface, resulted from the lattice-mismatch driven structural relaxation. Because of the itinerant nature of its 4d electrons, we see that the ferromagnetic properties of Pd are highly sensitive to the local environment and can be enhanced further by increasing the thickness of CoO overlayer film or/and by applying an additional uniaxial pressure along c-axis exerted externally on the bottom layers of the Pd substrate. Our finding provides new functionality for the interfacial moments of the CoO/Pd system, which can be accessed experimentally, e.g., by the magneto-optical Kerr effect (MOKE) or/and by element-resolved X-ray magnetic circular dichroism (XMCD) measurement.

Ferromagnetism of Pd(001) substrate induced by antiferromagnetic CoO

Science.gov (United States)

Saha, Srijan Kumar; Stepanyuk, Valeri S.; Kirschner, Jürgen

2014-11-01

Our first-principles study has revealed unexpected spin polarization of the Pd(001) substrate in contact with antiferromagnetic CoO overlayers. We give an evidence that the ferromagnetism of Pd is caused by the zigzag positions of Co atoms with respect to the Pd interface, resulted from the lattice-mismatch driven structural relaxation. Because of the itinerant nature of its 4d electrons, we see that the ferromagnetic properties of Pd are highly sensitive to the local environment and can be enhanced further by increasing the thickness of CoO overlayer film or/and by applying an additional uniaxial pressure along c-axis exerted externally on the bottom layers of the Pd substrate. Our finding provides new functionality for the interfacial moments of the CoO/Pd system, which can be accessed experimentally, e.g., by the magneto-optical Kerr effect (MOKE) or/and by element-resolved X-ray magnetic circular dichroism (XMCD) measurement.

Magnon-induced superconductivity in a topological insulator coupled to ferromagnetic and antiferromagnetic insulators

Science.gov (United States)

Hugdal, Henning G.; Rex, Stefan; Nogueira, Flavio S.; Sudbø, Asle

2018-05-01

We study the effective interactions between Dirac fermions on the surface of a three-dimensional topological insulator due to the proximity coupling to the magnetic fluctuations in a ferromagnetic or antiferromagnetic insulator. Our results show that the magnetic fluctuations can mediate attractive interactions between Dirac fermions of both Amperean and BCS types. In the ferromagnetic case, we find pairing between fermions with parallel momenta, so-called Amperean pairing, whenever the effective Lagrangian for the magnetic fluctuations does not contain a quadratic term. The pairing interaction also increases with increasing Fermi momentum and is in agreement with previous studies in the limit of high chemical potential. If a quadratic term is present, the pairing is instead of BCS type above a certain chemical potential. In the antiferromagnetic case, BCS pairing occurs when the ferromagnetic coupling between magnons on the same sublattice exceeds the antiferromagnetic coupling between magnons on different sublattices. Outside this region in parameter space, we again find that Amperean pairing is realized.

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

Energy Technology Data Exchange (ETDEWEB)

Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-11-24

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

Spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor structures

International Nuclear Information System (INIS)

Li, Hong; Yang, Wei; Yang, Xinjian; Qin, Minghui; Guo, Jianqin

2007-01-01

Taking into account the thickness of the ferromagnetic insulator, the spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions is studied based on the Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the subgap resonance peaks. The spin polarization due to the spin-filter effect of the FI causes an imbalance of the peaks heights and can enhance the Zeeman splitting of the gap peaks caused by an applied magnetic field. The spin-filter effect has no contribution to the proximity-effect-induced superconductivity in NM interlayer

Room-temperature ferromagnetism in Co and Nb co-doped TiO2 nanoparticles

International Nuclear Information System (INIS)

Hachisu, M.; Mori, K.; Hyodo, K.; Morimoto, S.; Yamazaki, T.; Ichiyanagi, Y.

2015-01-01

Co- and Nb-doped TiO 2 nanoparticles encapsulated with amorphous SiO 2 were synthesized by our novel preparation method. An anatase TiO 2 single-phase structure was confirmed using X-ray diffraction. The particle size could be controlled to be about 5 nm. The composition of these nanoparticles was investigated by X-ray fluorescence analysis. X-ray absorption near-edge structure spectra showed that the Ti 4+ and Co 2+ states were dominant in our prepared samples. A reduction in the coordination number was also confirmed. The dependence of the electrical conductivity on the frequency was measured by an LCR meter, and the carrier concentration was determined. The magnetization curves for the nanoparticles indicated ferromagnetic behavior at room temperature. We concluded that the ferromagnetism originated in oxygen vacancies around the transition metal ions

6% magnetic-field-induced strain by twin-boundary motion in ferromagnetic Ni-Mn-Ga

International Nuclear Information System (INIS)

Murray, S. J.; Marioni, M.; Allen, S. M.; O'Handley, R. C.; Lograsso, T. A.

2000-01-01

Field-induced strains of 6% are reported in ferromagnetic Ni-Mn-Ga martensites at room temperature. The strains are the result of twin boundary motion driven largely by the Zeeman energy difference across the twin boundary. The strain measured parallel to the applied magnetic field is negative in the sample/field geometry used here. The strain saturates in fields of order 400 kA/m and is blocked by a compressive stress of order 2 MPa applied orthogonal to the magnetic field. The strain versus field curves exhibit appreciable hysteresis associated with the motion of the twin boundaries. A simple model accounts quantitatively for the dependence of strain on magnetic field and external stress using as input parameters only measured quantities. (c) 2000 American Institute of Physics

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

Current-induced Rashba spin orbit torque in silicene

Energy Technology Data Exchange (ETDEWEB)

Chen, Ji, E-mail: muze7777@hdu.edu.cn [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Peng, Yingzi [Department of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhou, Jie [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China)

2017-06-15

Highlights: • The spin dynamics of a ferromagnetic layer coupled to a silicene is investigated. • The Rashba spin orbit torque is obtained and the well-known LLG equation is modified. • The explicit forms of spin orbit torques in Domain Wall and vortex is also obtained. - Abstract: We study theoretically the spin torque of a ferromagnetic layer coupled to a silicene in the presence of the intrinsic Rashba spin orbit coupling (RSOC) effect. By using gauge field method, we find that under the applied current, the RSOC can induce an effective field which will result in the spin precession of conduction electron without applying any magnetic field. We also derive the spin torques due to the RSOC, which generalize the Landau-Lifshitz-Gilbert (LLG) equation. The spin torques are related to the applied current, the carrier density and Rashba strength of the system.

Hydrodynamic characteristics of airlift nitrifying reactor using carrier-induced granular sludge

International Nuclear Information System (INIS)

Jin Rencun; Zheng Ping; Mahmood, Qaisar; Zhang Lei

2008-01-01

Since nitrification is the rate-limiting step in the biological nitrogen removal from wastewater, many studies have been conducted on the immobilization of nitrifying bacteria. A laboratory-scale investigation was carried out to scrutinize the effectiveness of activated carbon carrier addition for granulation of nitrifying sludge in a continuous-flow airlift bioreactor and to study the hydrodynamics of the reactor with carrier-induced granules. The results showed that the granular sludge began to appear and matured 60 and 108 days, respectively, after addition of carriers, while no granule was observed in the absence of carriers in the control test. The mature granules had a diameter of 0.5-5 mm (1.6 mm in average), settling velocity 22.3-55.8 m h -1 and specific gravity of 1.086. The relationship between the two important hydrodynamic coefficients, i.e. gas holdup and liquid circulation velocity, and the superficial gas velocity were established by a simple model and were confirmed experimentally. The model also could predict the critical superficial gas velocity for liquid circulation and that for granules circulation, with respective values of 1.017 and 2.662 cm min -1 , accurately

Hydrodynamic characteristics of airlift nitrifying reactor using carrier-induced granular sludge

Energy Technology Data Exchange (ETDEWEB)

Jin Rencun [Department of Environmental Engineering, Zhejiang University, Hangzhou 310029 (China); Department of Environmental Science, Hangzhou Normal University, Hangzhou 310036 (China); Zheng Ping [Department of Environmental Engineering, Zhejiang University, Hangzhou 310029 (China)], E-mail: pzheng@zju.edu.cn; Mahmood, Qaisar; Zhang Lei [Department of Environmental Engineering, Zhejiang University, Hangzhou 310029 (China)

2008-09-15

Since nitrification is the rate-limiting step in the biological nitrogen removal from wastewater, many studies have been conducted on the immobilization of nitrifying bacteria. A laboratory-scale investigation was carried out to scrutinize the effectiveness of activated carbon carrier addition for granulation of nitrifying sludge in a continuous-flow airlift bioreactor and to study the hydrodynamics of the reactor with carrier-induced granules. The results showed that the granular sludge began to appear and matured 60 and 108 days, respectively, after addition of carriers, while no granule was observed in the absence of carriers in the control test. The mature granules had a diameter of 0.5-5 mm (1.6 mm in average), settling velocity 22.3-55.8 m h{sup -1} and specific gravity of 1.086. The relationship between the two important hydrodynamic coefficients, i.e. gas holdup and liquid circulation velocity, and the superficial gas velocity were established by a simple model and were confirmed experimentally. The model also could predict the critical superficial gas velocity for liquid circulation and that for granules circulation, with respective values of 1.017 and 2.662 cm min{sup -1}, accurately.

Ferromagnetism in doped or undoped spintronics nanomaterials

Science.gov (United States)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

Directory of Open Access Journals (Sweden)

Hamidreza Emamipour

2013-01-01

Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

Investigation of strain-induced magnetization change in ferromagnetic microparticles

International Nuclear Information System (INIS)

Chuklanov, A P; Nurgazizov, N I; Bizyaev, D A; Khanipov, T F; Bukharaev, A A; Yu Petukhov, V; Chirkov, V V; Gumarov, G G

2016-01-01

This work is devoted to investigation of magnetoelastic strain effect on the ferromagnetic microparticles of permalloy. An original method of sample fabrication with compressed microparticles is proposed. Magnetic force microscopy and magneto-optical Kerr experiments were carried out with unstrained and compressed microparticles. The domain walls transformation in compressed microparticles is in good agreement with numerical calculations. Hard axis of magnetization was observed on the compressed sample. (paper)

Effect of loading speed on the stress-induced magnetic behavior of ferromagnetic steel

Energy Technology Data Exchange (ETDEWEB)

Bao, Sheng, E-mail: longtubao@zju.edu.cn; Gu, Yibin; Fu, Meili; Zhang, Da; Hu, Shengnan

2017-02-01

The primary goal of this research is to investigate the effect of loading speed on the stress-induced magnetic behavior of a ferromagnetic steel. Uniaxial tension tests on Q235 steel were carried out with various stress levels under different loading speeds. The variation of the magnetic signals surrounding the tested specimen was detected by a fluxgate magnetometer. The results indicated that the magnetic signal variations depended not only on the tensile load level but on the loading speed during the test. The magnetic field amplitude seemed to decrease gradually with the increase in loading speed at the same tensile load level. Furthermore, the evolution of the magnetic reversals is also related to the loading speed. Accordingly, the loading speed should be considered as one of the influencing variables in the Jies-Atherton model theory of the magnetomechanical effect. - Highlights: • Magnetic behaviors induced by different loading speeds were investigated. • Loading speed imposes strong impact on the variation of the magnetic field signals. • The magnetic field amplitude reduces gradually with the increasing loading speed. • The Jies-Atherton model theory should consider the effect of loading speed.

Effect of loading speed on the stress-induced magnetic behavior of ferromagnetic steel

International Nuclear Information System (INIS)

Bao, Sheng; Gu, Yibin; Fu, Meili; Zhang, Da; Hu, Shengnan

2017-01-01

The primary goal of this research is to investigate the effect of loading speed on the stress-induced magnetic behavior of a ferromagnetic steel. Uniaxial tension tests on Q235 steel were carried out with various stress levels under different loading speeds. The variation of the magnetic signals surrounding the tested specimen was detected by a fluxgate magnetometer. The results indicated that the magnetic signal variations depended not only on the tensile load level but on the loading speed during the test. The magnetic field amplitude seemed to decrease gradually with the increase in loading speed at the same tensile load level. Furthermore, the evolution of the magnetic reversals is also related to the loading speed. Accordingly, the loading speed should be considered as one of the influencing variables in the Jies-Atherton model theory of the magnetomechanical effect. - Highlights: • Magnetic behaviors induced by different loading speeds were investigated. • Loading speed imposes strong impact on the variation of the magnetic field signals. • The magnetic field amplitude reduces gradually with the increasing loading speed. • The Jies-Atherton model theory should consider the effect of loading speed.

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Science.gov (United States)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Magnetic phase transition induced by electrostatic gating in two-dimensional square metal-organic frameworks

Science.gov (United States)

Wang, Yun-Peng; Li, Xiang-Guo; Liu, Shuang-Long; Fry, James N.; Cheng, Hai-Ping

2018-03-01

We investigate theoretically magnetism and magnetic phase transitions induced by electrostatic gating of two-dimensional square metal-organic framework compounds. We find that electrostatic gating can induce phase transitions between homogeneous ferromagnetic and various spin-textured antiferromagnetic states. Electronic structure and Wannier function analysis can reveal hybridizations between transition-metal d orbitals and conjugated π orbitals in the organic framework. Mn-containing compounds exhibit a strong d -π hybridization that leads to partially occupied spin-minority bands, in contrast to compounds containing transition-metal ions other than Mn, for which electronic structure around the Fermi energy is only slightly spin split due to weak d -π hybridization and the magnetic interaction is of the Ruderman-Kittel-Kasuya-Yosida type. We use a ferromagnetic Kondo lattice model to understand the phase transition in Mn-containing compounds in terms of carrier density and illuminate the complexity and the potential to control two-dimensional magnetization.

Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Stollenwerk, Tobias

2013-09-15

In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

International Nuclear Information System (INIS)

Stollenwerk, Tobias

2013-09-01

In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

Science.gov (United States)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

International Nuclear Information System (INIS)

Wang Hongxia; Yan Yu; Mohammed, Y. Sh.; Du Xiaobo; Li Kai; Jin Hanmin

2009-01-01

The electronic structure and ferromagnetic stability of Co-doped SnO 2 are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U Co transforms the ground state of Co-doped SnO 2 to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U Co calculations show that the pure substitutional Co defects in SnO 2 cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U Co calculations are not changed by the correction of band gap.

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

International Nuclear Information System (INIS)

Yang Jing; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Li Liang; Wu Liang-Liang; Le Ling-Cong; Li Xiao-Jing; He Xiao-Guang; Yang Hui; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

2013-01-01

The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p—i—n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm 2 to 0.95 mA/cm 2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells. (interdisciplinary physics and related areas of science and technology)

Superconducting Ferromagnetic Nanodiamond.

Science.gov (United States)

Zhang, Gufei; Samuely, Tomas; Xu, Zheng; Jochum, Johanna K; Volodin, Alexander; Zhou, Shengqiang; May, Paul W; Onufriienko, Oleksandr; Kačmarčík, Jozef; Steele, Julian A; Li, Jun; Vanacken, Johan; Vacík, Jiri; Szabó, Pavol; Yuan, Haifeng; Roeffaers, Maarten B J; Cerbu, Dorin; Samuely, Peter; Hofkens, Johan; Moshchalkov, Victor V

2017-06-27

Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

Heat dissipation due to ferromagnetic resonance in a ferromagnetic metal monitored by electrical resistance measurement

International Nuclear Information System (INIS)

Yamanoi, Kazuto; Yokotani, Yuki; Kimura, Takashi

2015-01-01

The heat dissipation due to the resonant precessional motion of the magnetization in a ferromagnetic metal has been investigated. We demonstrated that the temperature during the ferromagnetic resonance can be simply detected by the electrical resistance measurement of the Cu strip line in contact with the ferromagnetic metal. The temperature change of the Cu strip due to the ferromagnetic resonance was found to exceed 10 K, which significantly affects the spin-current transport. The influence of the thermal conductivity of the substrate on the heating was also investigated

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Valley and spin thermoelectric transport in ferromagnetic silicene junctions

International Nuclear Information System (INIS)

Ping Niu, Zhi; Dong, Shihao

2014-01-01

We have investigated the valley and spin resolved thermoelectric transport in a normal/ferromagnetic/normal silicene junction. Due to the coupling between the valley and spin degrees of freedom, thermally induced pure valley and spin currents can be demonstrated. The magnitude and sign of these currents can be manipulated by adjusting the ferromagnetic exchange field and local external electric field, thus the currents are controllable. We also find fully valley and/or spin polarized currents. Similar to the currents, owing to the band structure symmetry, tunable pure spin and/or valley thermopowers with zero charge counterpart are generated. The results obtained here suggest a feasible way of generating a pure valley (spin) current and thermopower in silicene

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Transport and pairing properties of helical edges with proximity induced superconductivity and ferromagnetism

Energy Technology Data Exchange (ETDEWEB)

Keidel, Felix; Burset, Pablo; Trauzettel, Bjoern [Institute of Theoretical Physics and Astrophysics, University of Wuerzburg, 97074 Wuerzburg (Germany); Crepin, Francois [Laboratoire de Physique Theorique de la Matiere Condensee, UPMC, Sorbonne Universites, 75252 Paris (France)

2016-07-01

The scientific interest in Quantum Spin Hall systems is far from declining. While these certainly are fascinating by themselves, there is plenty of new and exciting physics to arise when superconductivity and ferromagnetism are brought into the game. The strong constraint of helicity in the edge states of a two-dimensional topological insulator is responsible for an intimate relation between the allowed scattering processes in a hybrid junction and the parameters of the system, namely the superconducting order parameter and the magnetic field. In our work, we study a helical liquid in proximity to a conventional s-wave superconductor and ferromagnetic insulators by means of a Green's function analysis. The ferromagnet gives rise to sub-gap Andreev/Majorana bound states and non-local crossed Andreev reflection (CAR), both of which decisively affect the pairing and transport properties of the junction. As a result, the simple s-wave symmetry of the superconductor is enriched and unconventional odd-frequency triplet superconductivity emerges. Strikingly, we have identified a setup that favors CAR over electron co-tunneling and may allow for the indirect measurement of the symmetries of the superconducting order parameter.

Exotic ferromagnetism in the two-dimensional quantum material C3N

Science.gov (United States)

Huang, Wen-Cheng; Li, Wei; Liu, Xiaosong

2018-04-01

The search for and study of exotic quantum states in novel low-dimensional quantum materials have triggered extensive research in recent years. Here, we systematically study the electronic and magnetic structures in the newly discovered two-dimensional quantum material C3N within the framework of density functional theory. The calculations demonstrate that C3N is an indirect-band semiconductor with an energy gap of 0.38 eV, which is in good agreement with experimental observations. Interestingly, we find van Hove singularities located at energies near the Fermi level, which is half that of graphene. Thus, the Fermi energy easily approaches that of the singularities, driving the system to ferromagnetism, under charge carrier injection, such as electric field gating or hydrogen doping. These findings not only demonstrate that the emergence of magnetism stems from the itinerant electron mechanism rather than the effects of local magnetic impurities, but also open a new avenue to designing field-effect transistor devices for possible realization of an insulator-ferromagnet transition by tuning an external electric field.

Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

KAUST Repository

Wang, Xuhui

2012-03-13

In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

KAUST Repository

Wang, Xuhui; Manchon, Aurelien

2012-01-01

In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

Microscopic coexistence of ferromagnetism and superconductivity in single-crystal UCoGe

International Nuclear Information System (INIS)

Ohta, Tetsuya; Hattori, Taisuke; Ishida, Kenji; Nakai, Yusuke; Osaki, Eisuke; Deguchi, Kazuhiko; Sato, Noriaki K.; Satoh, Isamu

2010-01-01

Unambiguous evidence for the microscopic coexistence of ferromagnetism and superconductivity in UCoGe (T Curie -2.5 K and T SC -0.6 K) is reported from 59 Co nuclear quadrupole resonance (NQR). The 59 Co-NQR signal below 1 K indicates ferromagnetism throughout the sample volume, while the nuclear spin-lattice relaxation rate 1/T 1 in the ferromagnetic (FM) phase decreases below T SC due to the opening of the superconducting (SC) gap. The SC state is found to be inhomogeneous, suggestive of a self-induced vortex state, potentially realizable in a FM superconductor. In addition, the 59 Co-NQR spectrum around T Curie shows that the FM transition in UCoGe possesses a first-order character, which is consistent with the theoretical prediction that the low-temperature FM transition in itinerant magnets is generically of first-order. (author)

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

Science.gov (United States)

Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

2017-11-09

Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

Control of room-temperature defect-mediated ferromagnetism in VO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Yang, Tsung-Han, E-mail: tyang3@ncsu.edu [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States); Nori, Sudhakar; Mal, Siddhartha; Narayan, Jagdish [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2011-09-15

We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO{sub 2}) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO{sub 2} films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO{sub 2} films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO{sub 2} films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.

Density-functional study on the robust ferromagnetism in rare-earth element Yb-doped SnO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Zhang, Kai-Cheng, E-mail: kczhang@yeah.net [College of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Li, Yong-Feng [Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal ResourcesInner Mongolia University of Science and Technology, Baotou 014010 (China); School of Mathematics, Physics and Biological Engineering, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Liu, Yong [State Key Laboratory of Metastable Materials Science and Technology and College of Science, Yanshan University, Qinhuangdao, Hebei 066004 (China); Chi, Feng [College of Engineering, Bohai University, Jinzhou 121013 (China)

2014-06-01

So far, little has been known about the ferromagnetism induced by p–f hybridization. We investigate the magnetic properties of Yb-doped SnO{sub 2} by first-principles calculations. We find that the doped system favors the ferromagnetic state and a room-temperature ferromagnetism can be expected in it. The origin of ferromagnetism can be attributed to the p–f hybridization between Yb impurity and its surrounding oxygen atoms. The formation energy of defect complex is calculated and the magnetic mediation of intrinsic vacancies is studied. Our results reveal that the formation energy of the defect complex with Sn vacancy is about 7.3 eV lower in energy than that with oxygen vacancy. This means Sn vacancy is much easier to form than oxygen vacancy in the presence of Yb substitution. The ferromagnetism of the doped system is greatly enhanced in the presence of Sn vacancies. - Highlights: • Room-temperature ferromagnetism can be expected in Yb-doped SnO{sub 2}. • The origin of ferromagnetism can be attributed to the p–f hybridization between Yb and O atoms. • Oxygen vacancies are much hard to form and contribute little to the ferromagnetism. • Sn vacancies are easy to form under oxygen-rich condition and stabilize the ferromagnetism effectively.

SERS study of surface plasmon resonance induced carrier movement in Au@Cu2O core-shell nanoparticles

Science.gov (United States)

Chen, Lei; Zhang, Fan; Deng, Xin-Yu; Xue, Xiangxin; Wang, Li; Sun, Yantao; Feng, Jing-Dong; Zhang, Yongjun; Wang, Yaxin; Jung, Young Mee

2018-01-01

A plasmon induced carrier movement enhanced mechanism of surface-enhanced Raman scattering (SERS) was investigated using a charge-transfer (CT) enhancement mechanism. Here, we designed a strategy to study SERS in Au@Cu2O nanoshell nanoparticles with different shell thicknesses. Among the plasmonically coupled nanostructures, Au spheres with Cu2O shells have been of special interest due to their ultrastrong electromagnetic fields and controllable carrier transfer properties, which are useful for SERS. Au@Cu2O nanoshell nanoparticles (NPs) with shell thicknesses of 48-56 nm are synthesized that exhibit high SERS activity. This high activity originates from plasmonic-induced carrier transfer from Au@Cu2O to 4-mercaptobenzoic acid (MBA). The CT transition from the valence band (VB) of Cu2O to the second excited π-π* transition of MBA, and is of b2 electronic symmetry, which was enhanced significantly. The Herzberg-Teller selection rules were employed to predict the observed enhanced b2 symmetry modes. The system constructed in this study combines the long-range electromagnetic effect of Au NPs, localized surface plasmon resonance (LSPR) of the Au@Cu2O nanoshell, and the CT contribution to assist in understanding the SERS mechanism based on LSPR-induced carrier movement in metal/semiconductor nanocomposites.

Room temperature ferromagnetism in liquid-phase pulsed laser ablation synthesized nanoparticles of nonmagnetic oxides

International Nuclear Information System (INIS)

Singh, S. C.; Gopal, R.; Kotnala, R. K.

2015-01-01

Intrinsic Room Temperature Ferromagnetism (RTF) has been observed in undoped/uncapped zinc oxide and titanium dioxide spherical nanoparticles (NPs) obtained by a purely green approach of liquid phase pulsed laser ablation of corresponding metal targets in pure water. Saturation magnetization values observed for zinc oxide (average size, 9 ± 1.2 nm) and titanium dioxide (average size, 4.4 ± 0.3 nm) NPs are 62.37 and 42.17 memu/g, respectively, which are several orders of magnitude larger than those of previous reports. In contrast to the previous works, no postprocessing treatments or surface modification is required to induce ferromagnetism in the case of present communication. The most important result, related to the field of intrinsic ferromagnetism in nonmagnetic materials, is the observation of size dependent ferromagnetism. Degree of ferromagnetism in titanium dioxide increases with the increase in particle size, while it is reverse for zinc oxide. Surface and volume defects play significant roles for the origin of RTF in zinc oxide and titanium dioxide NPs, respectively. Single ionized oxygen and neutral zinc vacancies in zinc oxide and oxygen and neutral/ionized titanium vacancies in titanium dioxide are considered as predominant defect centres responsible for observed ferromagnetism. It is expected that origin of ferromagnetism is a consequence of exchange interactions between localized electron spin moments resulting from point defects

Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

CERN Document Server

Kazakevich, L A

2003-01-01

It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

International Nuclear Information System (INIS)

Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

2015-01-01

The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

Voltage control of ferromagnetic resonance

Directory of Open Access Journals (Sweden)

Ziyao Zhou

2016-06-01

Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

Inhomogeneous superconductivity in a ferromagnet

International Nuclear Information System (INIS)

Kontos, T.; Aprili, M.; Lesueur, J.; Genet, F.; Boursier, R.; Grison, X.

2003-01-01

We have studied a new superconducting state where the condensate wave function resulting from conventional pairing, is modified by an exchange field. Superconductivity is induced into a ferromagnetic thin film (F) by the proximity effect with a superconducting reservoir (S). We observed oscillations of the superconducting order parameter induced in F as a function of the distance from the S/F interface. They originate from the finite momentum transfer provided to Cooper pairs by the splitting of the spin up and down bands. We measured the superconducting density of states in F by tunneling spectroscopy and the Josephson critical current when F is coupled with a superconducting counter-electrode. Negative values of the superconducting order parameter are revealed by capsized tunneling spectra in F and a negative Josephson coupling (π-junction)

Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

Energy Technology Data Exchange (ETDEWEB)

Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

2017-02-15

Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

Exchange bias in nearly perpendicularly coupled ferromagnetic/ferromagnetic system

International Nuclear Information System (INIS)

Bu, K.M.; Kwon, H.Y.; Oh, S.W.; Won, C.

2012-01-01

Exchange bias phenomena appear not only in ferromagnetic/antiferromagnetic systems but also in ferromagnetic/ferromagnetic systems in which two layers are nearly perpendicularly coupled. We investigated the origin of the symmetry-breaking mechanism and the relationship between the exchange bias and the system's energy parameters. We compared the results of computational Monte Carlo simulations with those of theoretical model calculation. We found that the exchange bias exhibited nonlinear behaviors, including sign reversal and singularities. These complicated behaviors were caused by two distinct magnetization processes depending on the interlayer coupling strength. The exchange bias reached a maximum at the transition between the two magnetization processes. - Highlights: ► Exchange bias phenomena are found in perpendicularly coupled F/F systems. ► Exchange bias exhibits nonlinear behaviors, including sign reversal and singularities. ► These complicated behaviors were caused by two distinct magnetization processes. ► Exchange bias reached a maximum at the transition between the two magnetization processes. ► We established an equation to maximize the exchange bias in perpendicularly coupled F/F system.

Precipitation of ferromagnetic phase induced by defect energies during creep deformation in Type 304 austenitic steel

Energy Technology Data Exchange (ETDEWEB)

Tsukada, Yuhki, E-mail: tsukada@silky.numse.nagoya-u.ac.j [Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Shiraki, Atsuhiro; Murata, Yoshinori [Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takaya, Shigeru [Japan Atomic Energy Agency, 4002 Narita-cho, O-arai-machi, Higashi-ibaraki-gun, Ibaraki 311-1393 (Japan); Koyama, Toshiyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Morinaga, Masahiko [Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2010-06-15

The correlation of defect energies with precipitation of the ferromagnetic phase near M{sub 23}C{sub 6} carbide during creep tests at high temperature in Type 304 austenitic steel was examined by estimating the defect energies near the carbide, based on micromechanics. As one of the defect energies, the precipitation energy was calculated by assuming M{sub 23}C{sub 6} carbide to be a spherical inclusion. The other defect energy, creep dislocation energy, was calculated based on dislocation density data obtained from transmission electron microscopy observations of the creep samples. The dislocation energy density was much higher than the precipitation energy density in the initial stage of the creep process, when the ferromagnetic phase started to increase. Creep dislocation energy could be the main driving force for precipitation of the ferromagnetic phase.

Precipitation of ferromagnetic phase induced by defect energies during creep deformation in Type 304 austenitic steel

International Nuclear Information System (INIS)

Tsukada, Yuhki; Shiraki, Atsuhiro; Murata, Yoshinori; Takaya, Shigeru; Koyama, Toshiyuki; Morinaga, Masahiko

2010-01-01

The correlation of defect energies with precipitation of the ferromagnetic phase near M 23 C 6 carbide during creep tests at high temperature in Type 304 austenitic steel was examined by estimating the defect energies near the carbide, based on micromechanics. As one of the defect energies, the precipitation energy was calculated by assuming M 23 C 6 carbide to be a spherical inclusion. The other defect energy, creep dislocation energy, was calculated based on dislocation density data obtained from transmission electron microscopy observations of the creep samples. The dislocation energy density was much higher than the precipitation energy density in the initial stage of the creep process, when the ferromagnetic phase started to increase. Creep dislocation energy could be the main driving force for precipitation of the ferromagnetic phase.

Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

International Nuclear Information System (INIS)

Hallam, Brett; Abbott, Malcolm; Nampalli, Nitin; Hamer, Phill; Wenham, Stuart

2016-01-01

A three-state model is used to explore the influence of defect formation- and passivation rates of carrier-induced degradation related to boron-oxygen complexes in boron-doped p-type silicon solar cells within a hydrogen-based model. The model highlights that the inability to effectively mitigate carrier-induced degradation at elevated temperatures in previous studies is due to the limited availability of defects for hydrogen passivation, rather than being limited by the defect passivation rate. An acceleration of the defect formation rate is also observed to increase both the effectiveness and speed of carrier-induced degradation mitigation, whereas increases in the passivation rate do not lead to a substantial acceleration of the hydrogen passivation process. For high-throughput mitigation of such carrier-induced degradation on finished solar cell devices, two key factors were found to be required, high-injection conditions (such as by using high intensity illumination) to enable an acceleration of defect formation whilst simultaneously enabling a rapid passivation of the formed defects, and a high temperature to accelerate both defect formation and defect passivation whilst still ensuring an effective mitigation of carrier-induced degradation

A model study of tunneling conductance spectra of ferromagnetically ordered manganites

Science.gov (United States)

Panda, Saswati; Kar, J. K.; Rout, G. C.

2018-02-01

We report here the interplay of ferromagnetism (FM) and charge density wave (CDW) in manganese oxide systems through the study of tunneling conductance spectra. The model Hamiltonian consists of strong Heisenberg coupling in core t2g band electrons within mean-field approximation giving rise to ferromagnetism. Ferromagnetism is induced in the itinerant eg electrons due to Kubo-Ohata type double exchange (DE) interaction among the t2g and eg electrons. The charge ordering (CO) present in the eg band giving rise to CDW interaction is considered as the extra-mechanism to explain the colossal magnetoresistance (CMR) property of manganites. The magnetic and CDW order parameters are calculated using Zubarev's Green's function technique and solved self-consistently and numerically. The eg electron density of states (DOS) calculated from the imaginary part of the Green's function explains the experimentally observed tunneling conductance spectra. The DOS graph exhibits a parabolic gap near the Fermi energy as observed in tunneling conductance spectra experiments.

Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

Science.gov (United States)

Craco, L.; Laad, M. S.; Müller-Hartmann, E.

2003-12-01

Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

Temperature limited heater utilizing non-ferromagnetic conductor

Science.gov (United States)

Vinegar,; Harold J. , Harris; Kelvin, Christopher [Houston, TX

2012-07-17

A heater is described. The heater includes a ferromagnetic conductor and an electrical conductor electrically coupled to the ferromagnetic conductor. The ferromagnetic conductor is positioned relative to the electrical conductor such that an electromagnetic field produced by time-varying current flow in the ferromagnetic conductor confines a majority of the flow of the electrical current to the electrical conductor at temperatures below or near a selected temperature.

Ferromagnetic resonance of Ni wires fabricated on ferroelectric LiNbO3 substrate for studying magnetic anisotropy induced by the heterojunction

Science.gov (United States)

Yamaguchi, Akinobu; Nakao, Akiko; Ohkochi, Takuo; Yasui, Akira; Kinoshita, Toyohiko; Utsumi, Yuichi; Saiki, Tsunemasa; Yamada, Keisuke

2018-05-01

The electrical ferromagnetic resonance of micro-scale Ni wires with magnetic anisotropy induced by the heterojunction between the Ni layer and ferroelectric single crystalline LiNbO3 substrate was demonstrated by using rectifying effect. The two resonance modes were observed in the Ni wire aligned parallel to the applied magnetic field in plane. The lower resonance frequency mode is considered to correspond to the normal resonance mode with domain resonance, while the higher resonance mode is attributed to the mode which is contributed by the heterojunction between the Ni layer and LiNbO3 substrate. Our results manifest that the rectifying electrical detections are very useful for understating and evaluating the magnetic properties induced by the heterojunction.

Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure

Science.gov (United States)

Heron, J. T.; Trassin, M.; Ashraf, K.; Gajek, M.; He, Q.; Yang, S. Y.; Nikonov, D. E.; Chu, Y.-H.; Salahuddin, S.; Ramesh, R.

2011-11-01

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

OpenAIRE

Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

2009-01-01

We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

International Nuclear Information System (INIS)

An Xing-Tao

2014-01-01

The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrier, the transport processes can be divided into three kinds: the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the current-voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltage, and then a large peak-to-valley current ratio can be obtained. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Defect types and room temperature ferromagnetism in N-doped rutile TiO2 single crystals

Science.gov (United States)

Qin, Xiu-Bo; Li, Dong-Xiang; Li, Rui-Qin; Zhang, Peng; Li, Yu-Xiao; Wang, Bao-Yi

2014-06-01

The magnetic properties and defect types of virgin and N-doped TiO2 single crystals are probed by superconducting quantum interference device (SQUID), X-ray photoelectron spectroscopy (XPS), and positron annihilation analysis (PAS). Upon N doping, a twofold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancy, rather to unpaired 3d electrons in Ti3+, arising from titanium vacancies and the replacement of O with N atoms in the rutile structure. The production of titanium vacancies can enhance the room temperature ferromagnetism (RTFM), and substitution of O with N is the onset of ferromagnetism by inducing relatively strong ferromagnetic ordering.

The Physics of Ferromagnetism

CERN Document Server

Miyazaki, Terunobu

2012-01-01

This book covers both basic physics of ferromagnetism such as magnetic moment, exchange coupling, magnetic anisotropy and recent progress in advanced ferromagnetic materials. Special interests are focused on NdFeB permanent magnets and the materials studied in the field of spintronics. In the latter, development of tunnel magnetoresistance effect through so called giant magnetoresistance effect is explained.

The origin of room temperature ferromagnetism mediated by Co–VZn complexes in the ZnO grain boundary

KAUST Repository

Devi, Assa Aravindh Sasikala

2016-05-20

Ferromagnetism in polycrystalline ZnO doped with Co has been observed to be sustainable in recent experiments. We use first-principle calculations to show that Co impurities favorably substitute at the grain boundary (GB) rather than in the bulk. We reveal that room-temperature ferromagnetism (RTFM) at the Co-doped ZnO GB in the presence of Zn vacancies is due to ferromagnetic exchange coupling of a pair of closely associated Co atoms in the GB, with a ferromagnetic exchange coupling energy of ∼300 meV, which is in contrast to a previous study that suggested the O vacancy-Co complex induced ferromagnetism. Electronic structure analysis was used to predict the exchange coupling mechanism, showing that the hybridization of O p states with Co and Zn d states enhances the magnetic polarization originating from the GB. Our results indicate that RTFM originates from Co clusters at interfaces or in GBs. © 2016 The Royal Society of Chemistry.

Magnetization Reversal through Soliton in a Site-Dependent Weak Ferromagnet

International Nuclear Information System (INIS)

Kavitha, L.; Sathishkumar, P.; Saravanan, M.; Gopi, D.

2010-06-01

Switching the magnetization of a magnetic bit through flipping of soliton offers the possibility of developing a new innovative approach for data storage technologies. The spin dynamics of a site-dependent ferromagnet with antisymmetric Dzyaloshinskii-Moriya interaction is governed by a generalized inhomogeneous higher order nonlinear Schroedinger equation. We demonstrate the magnetization reversal through flipping of soliton in the ferromagnetic medium by solving the two coupled evolution equations for the velocity and amplitude of the soliton using the fourth order Runge-Kutta method numerically. We propose a new approach to induce the flipping behaviour of soliton in the presence of inhomogeneity by tuning the parameter associated with Dzyaloshinskii-Moriya interaction which causes the soliton to move with constant velocity and amplitude along the spin lattice. (author)

Excitonic Wigner crystal and high T sub c ferromagnetism in RB sub 6

CERN Document Server

Kasuya, T

2000-01-01

The mechanisms for the high T sub c ferromagnetism in La-doped divalent hexaborides DB sub 6 are studied in detail comparing with similar family materials, in particular with YbB sub 6 , EuB sub 6 and Ce monopnictides. It is shown that in DB sub 6 the light-electron-heavy-hole paired excitonic states form the Wigner crystal, or Wigner glass in actual materials, in which the conventional intersite electron exchange interactions similar to that in Ni dominate the pair singlet formation due to the intra pair mixing causing a ferromagnetic spin glass-like ordering of electron spins. In the La-doped system La sub x D sub 1 sub - sub x B sub 6 , the population of molecular La impurity states with giant moments increases as x approaches the optimal value x sub 0 approx 0.005 for high T sub c providing vacant states for the roton-like fluctuations, which cause the high T sub c at the boundary of the delocalization of electron carriers. Therefore, the critical La concentration for delocalization coincides with the opt...

Defect induced ferromagnetism in MgO nanoparticles studied by optical and positron annihilation spectroscopy

Science.gov (United States)

Kumar, Nitesh; Sanyal, D.; Sundaresan, A.

2009-08-01

Positron annihilation spectroscopy has been used to explore the nature of defects and to estimate the defect concentrations in ferromagnetic MgO nanoparticles. Our experimental results show that Mg vacancies or Mg vacancy concentration are present approximately at the concentration of 3.4 × 10 16 cm -3 in the nano-crystalline MgO which is twice the value that obtained for bulk sample. This is in correlation with the decrease of the intensity of blue luminescence and the saturation magnetic moment with increasing particle size. These results clearly demonstrate that the origin of magnetic moment and thus the ferromagnetism in MgO nanoparticles is due to Mg related vacancies at the surface of the particles.

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

CERN Document Server

Pereira, LMC; Wahl, U

Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

Room-temperature ferromagnetism in cerium dioxide powders

Energy Technology Data Exchange (ETDEWEB)

Rakhmatullin, R. M., E-mail: rrakhmat@kpfu.ru; Pavlov, V. V.; Semashko, V. V.; Korableva, S. L. [Kazan Federal University, Institute of Physics (Russian Federation)

2015-08-15

Room-temperature ferromagnetism is detected in a CeO{sub 2} powder with a grain size of about 35 nm and a low (<0.1 at %) manganese and iron content. The ferromagnetism in a CeO{sub 2} sample with a submicron crystallite size and the same manganese and iron impurity content is lower than in the nanocrystalline sample by an order of magnitude. Apart from ferromagnetism, both samples exhibit EPR spectra of localized paramagnetic centers, the concentration of which is lower than 0.01 at %. A comparative analysis of these results shows that the F-center exchange (FCE) mechanism cannot cause ferromagnetism. This conclusion agrees with the charge-transfer ferromagnetism model proposed recently.

Potential hazards and artifacts of ferromagnetic and nonferromagnetic surgical and dental materials and devices in nuclear magnetic resonance imaging

International Nuclear Information System (INIS)

New, P.F.J.; Rosen, B.R.; Brady, T.J.

1983-01-01

The risks to patients with metal surgical implants who are undergoing nuclear magnetic resonance (NMR) imaging and the artifacts caused by such implants were studied. Twenty-one aneurysm and other hemostatic clips and a variety of other materials (e.g., dental amalgam, 14 karat gold) were used. Longitudinal forces and torques were found to be exerted upon 16 of the 21 clips. With five aneurysm clips, forces and torques sufficient to produce risk of hemorrhage from dislocation of the clip from the vessel or aneurysm, or cerebral injury by clip displacement without dislodgement were identified. The induced ferromagnetism was shown to be related to the composition of the alloys from which the clips were manufactured. Clips with 10-14% nickel are evidently without sufficient induced ferromagnetism to cause hazard. The extent of NMR imaging artifacts was greater for materials with measurable ferromagnetic properties, but metals without measurable ferromagnetism in our tests also resulted in significant artifacts. Dental amalgam and 14 karat gold produced no imaging artifacts, but stainless steels in dentures and orthodontic braces produced extensive artifacts in the facial region

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

''Soft'' Anharmonic Vortex Glass in Ferromagnetic Superconductors

International Nuclear Information System (INIS)

Radzihovsky, Leo; Ettouhami, A. M.; Saunders, Karl; Toner, John

2001-01-01

Ferromagnetic order in superconductors can induce a spontaneous vortex (SV) state. For external field H=0 , rotational symmetry guarantees a vanishing tilt modulus of the SV solid, leading to drastically different behavior than that of a conventional, external-field-induced vortex solid. We show that quenched disorder and anharmoinc effects lead to elastic moduli that are wave-vector dependent out to arbitrarily long length scales, and non-Hookean elasticity. The latter implies that for weak external fields H , the magnetic induction scales universally like B(H)∼B(0)+cH α , with α∼0.72 . For weak disorder, we predict the SV solid is a topologically ordered glass, in the ''columnar elastic glass'' universality class

Shock wave induced martensitic transformations and morphology changes in Fe-Pd ferromagnetic shape memory alloy thin films

International Nuclear Information System (INIS)

Bischoff, A. J.; Arabi-Hashemi, A.; Ehrhardt, M.; Lorenz, P.; Zimmer, K.; Mayr, S. G.

2016-01-01

Combining experimental methods and classical molecular dynamics (MD) computer simulations, we explore the martensitic transformation in Fe_7_0Pd_3_0 ferromagnetic shape memory alloy thin films induced by laser shock peening. X-ray diffraction and scanning electron microscope measurements at shock wave pressures of up to 2.5 GPa reveal formation of martensitic variants with preferred orientation of the shorter c-axis of the tetragonal unit cell perpendicular to the surface plane. Moreover, consequential merging of growth islands on the film surface is observed. MD simulations unveil the underlying physics that are characterized by an austenite-martensite transformation with a preferential alignment of the c-axis along the propagation direction of the shock wave, resulting in flattening and in-plane expansion of surface features.

Ion mass dependence of irradiation-induced local creation of ferromagnetism in Fe60Al40 alloys

International Nuclear Information System (INIS)

Fassbender, J.; Liedke, M. O.; Strache, T.; Moeller, W.; Menendez, E.; Sort, J.; Rao, K. V.; Deevi, S. C.; Nogues, J.

2008-01-01

Ion irradiation of Fe 60 Al 40 alloys results in the phase transformation from the paramagnetic, chemically ordered B2 phase to the ferromagnetic, chemically disordered A2 phase. The magnetic phase transformation is related to the number of displacements per atom (dpa) during the irradiation. For heavy ions (Ar + , Kr + , and Xe + ), a universal curve is observed with a steep increase in the fraction of the ferromagnetic phase that reaches saturation, i.e., a complete phase transformation, at about 0.5 dpa. This proves the purely ballistic nature of the disordering process. If light ions are used (He + and Ne + ), a pronounced deviation from the universal curve is observed. This is attributed to bulk vacancy diffusion from the dilute collision cascades, which leads to a partial recovery of the thermodynamically favored B2 phase. Comparing different noble gas ion irradiation experiments allows us to assess the corresponding counteracting contributions. In addition, the potential to create local ferromagnetic areas embedded in a paramagnetic matrix is demonstrated

Coupling-induced cooperative behaviour in dynamic ferromagnetic cores in the presence of a noise floor

International Nuclear Information System (INIS)

Bulsara, Adi R.; Lindner, John F.; In, Visarath; Kho, Andy; Baglio, Salvatore; Sacco, Vincenzo; Ando, Bruno; Longhini, Patrick; Palacios, Antonio; Rappel, Wouter-Jan

2006-01-01

Recently, we have shown the emergence of oscillations in overdamped undriven nonlinear dynamic systems subject to carefully crafted coupling schemes and operating conditions. Here, we summarize experimental results obtained on a system of N=3 coupled ferromagnetic cores, the underpinning of a 'coupled-core fluxgate magnetometer' (CCFM); the oscillatory behaviour is triggered when the coupling constant exceeds a threshold value (bifurcation point), and the oscillation frequency exhibits a characteristic scaling behaviour with the 'separation' of the coupling constant from its threshold value, as well as with an external target DC magnetic flux signal. The oscillations, which can be induced at frequencies ranging from a few Hz to high-kHz, afford a new detection scheme for weak target magnetic signals. We also present the first (numerical) results on the effects of a (Gaussian, exponentially correlated) noise floor on the spectral properties of the system response

Coupling-induced cooperative behaviour in dynamic ferromagnetic cores in the presence of a noise floor

Energy Technology Data Exchange (ETDEWEB)

Bulsara, Adi R. [Space and Naval Warfare Systems Center San Diego, Code 2363, 53560 Hull Street, San Diego, CA 92152-5001 (United States)]. E-mail: bulsara@spawar.navy.mil; Lindner, John F. [Physics Department, College of Wooster, Wooster, OH 44691 (United States); In, Visarath [Space and Naval Warfare Systems Center San Diego, Code 2363, 53560 Hull Street, San Diego, CA 92152-5001 (United States); Kho, Andy [Space and Naval Warfare Systems Center San Diego, Code 2363, 53560 Hull Street, San Diego, CA 92152-5001 (United States); Baglio, Salvatore [Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Universita degli Studi di Catania, Viale A. Doria 6, 95125 Catania (Italy); Sacco, Vincenzo [Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Universita degli Studi di Catania, Viale A. Doria 6, 95125 Catania (Italy); Ando, Bruno [Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Universita degli Studi di Catania, Viale A. Doria 6, 95125 Catania (Italy); Longhini, Patrick [Nonlinear Dynamics Group, Department of Mathematics, San Diego State University, San Diego, CA 92182 (United States); Palacios, Antonio [Nonlinear Dynamics Group, Department of Mathematics, San Diego State University, San Diego, CA 92182 (United States); Rappel, Wouter-Jan [Physics Department, University of California at San Diego, La Jolla, CA 929093 (United States)

2006-04-17

Recently, we have shown the emergence of oscillations in overdamped undriven nonlinear dynamic systems subject to carefully crafted coupling schemes and operating conditions. Here, we summarize experimental results obtained on a system of N=3 coupled ferromagnetic cores, the underpinning of a 'coupled-core fluxgate magnetometer' (CCFM); the oscillatory behaviour is triggered when the coupling constant exceeds a threshold value (bifurcation point), and the oscillation frequency exhibits a characteristic scaling behaviour with the 'separation' of the coupling constant from its threshold value, as well as with an external target DC magnetic flux signal. The oscillations, which can be induced at frequencies ranging from a few Hz to high-kHz, afford a new detection scheme for weak target magnetic signals. We also present the first (numerical) results on the effects of a (Gaussian, exponentially correlated) noise floor on the spectral properties of the system response.

Ferromagnetic pairing states on two-coupled chains

International Nuclear Information System (INIS)

Tanaka, Akinori

2008-01-01

We propose a concrete model which exhibits ferromagnetism and electron-pair condensation simultaneously. The model is defined on two chains and consists of the electron hopping term, the on-site Coulomb repulsion and a ferromagnetic interaction which describes ferromagnetic coupling between two electrons, one on a bond in a chain and the other on a site in the other chain. It is rigorously shown that the model has fully-polarized ferromagnetic pairing ground states. The higher dimensional version of the model is also presented

Oxygen vacancy induced two-dimensional electron system in disordered-crystalline LaAlO{sub 3}/KTaO{sub 3} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Zapf, Michael; Gabel, Judith; Scheiderer, Philipp; Dudy, Lenart; Sing, Michael; Claessen, Ralph [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, Christoph; Lee, Tien-Lin [Diamond Light Source Ltd., Didcot (United Kingdom)

2016-07-01

Two-dimensional electron systems (2DESs) in oxide heterostructures based on SrTiO{sub 3} are considered to be a promising platform for future microelectronic technology. A variety of interesting properties such as ferromagnetism, resistive switching and superconductivity are linked to interfacial n-doping involving oxygen vacancies. The introduction of a high Z-cation with large spin-orbit coupling like Ta offers an exciting new parameter. We report on a new oxygen vacancy induced 2DES located at the interface of disordered LaAlO{sub 3} and crystalline KTaO{sub 3}, which exhibits remarkably high electron mobilities and charge carrier concentrations. The number of charge carriers can be readily manipulated by the film thickness and irradiation with intense X-rays. Our synchrotron-based hard X-ray photoemission experiments provide a direct probe of the Ta 5d charge carriers at the buried interface to obtain information on the charge carrier density, its depth distribution, and the band structure.

Physicochemical, structural and induced ferromagnetic properties of ...

Indian Academy of Sciences (India)

increase the concentration of carriers and/or improve the con- ductivity [2]. ... to hold the spin–spin (S.S) exchange long-range interaction ... ing process should be mentioned: the VI-coordination ionic .... exciting Cu Kα and Kβ signals (8.04 and 8.90 keV, respec- ..... eration of free Cd ions of different amounts depending.

Electric Field Controlled Magnetism in BiFeO3/Ferromagnet Films

Science.gov (United States)

Holcomb, M. B.; Chu, Y. H.; Martin, L. W.; Gajek, M.; Seidel, J.; Ramesh, R.; Scholl, A.; Fraile-Rodriguez, A.

2008-03-01

Electric field control of magnetism is a hot technological topic at the moment due to its potential to revolutionize today's devices. Magnetoelectric materials, those having both electric and magnetic order and the potential for coupling between the two, are a promising avenue to approach electric control. BiFeO3, both a ferroelectric and an antiferromagnet, is the only single phase room temperature magnetoelectric that is currently known. In addition to other possibilities, its multiferroic nature has potential in the very active field of exchange bias, where an antiferromagnetic thin film pins the magnetic direction of an adjoining ferromagnetic layer. Since this antiferromagnet is electrically tunable, this coupling could allow electric-field control of the ferromagnetic magnetization. Direction determination of antiferromagnetic domains in BFO has recently been shown using linear and circular dichroism studies. Recently, this technique has been extended to look at the magnetic domains of a ferromagnetic grown on top of BFO. The clear magnetic changes induced by application of electric fields reveal the possibility of electric control.

Efficiency of homopolar generators without ferromagnetic circuit

International Nuclear Information System (INIS)

Kharitonov, V.V.

1982-01-01

E.m.f. and weights of homopolar generators (HG) without a ferromagnetic circuit and of similar generator with a ferromagnetic circuit are compared at equal armature diameters and armature rotative speed. HG without ferromagnetic cuircuit of disk and cylinder types with hot and superconducting excitation winding are considered. Areas of the most reasonable removal of a ferromagnetic circuit in the HG layout are found. The plots of relationships between the e.m.f. and HG weight that permit to estimate the efficiency of ''nonferrite'' HG constructions are presented

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

Science.gov (United States)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

Room temperature d (0) ferromagnetism in hole doped Y2O3: widening the choice of host to tailor DMS.

Science.gov (United States)

Chakraborty, Brahmananda; Ramaniah, Lavanya M

2016-08-24

Transition metal-free-ferromagnetism in diluted magnetic semiconductors (DMS) is of much current interest in view of the search for more efficient DMS materials for spintronics applications. Our DFT results predict for the first time, that impurities from group1A (Li(+), Na(+), K(+)) doped on Y2O3 can induce a magnetic signature with a magnetic moment around 2.0 μ B per defect at hole concentrations around 1.63  ×  10(21) cm(-3), which is one order less than the critical hole density of ZnO with ferromagnetic coupling large enough to promote room temperature ferromagnetism. The induction of room temperature ferromagnetism by hole doping with an impurity atom from group 1A, which injects two holes per defect in the system, implies that the recommendation of three holes per defect given in the literature, which puts a restriction on the choice of host material and the impurity, is not a necessary criterion for hole induced room temperature ferromagnetism. DFT simulations with the generalized gradient approximation (GGA), confirmed by the more sophisticated hybrid functional, Heyd-Scuseria-Ernzerhof (HSE06), predict that the magnetic moment is mostly contributed by O atoms surrounding the impurity atom and the magnetic moment scale up with impurity concentration which is a positive indicator for practical applications. We quantitatively and extensively demonstrate through the analysis of the density of states and ferromagnetic coupling that the Stoner criterion is satisfied by pushing the Fermi level inside the valence band to activate room temperature ferromagnetism. The stability of the structure and the persistence of ferromagnetism at room temperature were demonstrated by ab initio MD simulations and computation of Curie temperature through the mean field approximation. This study widens the choice of host oxides to tailor DMS for spintronics applications.

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

Science.gov (United States)

Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

2016-10-01

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

2015-10-28

We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

International Nuclear Information System (INIS)

Ning, Deng; Lei, Zhang; Shu-Chao, Zhang; Pei-Yi, Chen; Jian-Shi, Tang

2010-01-01

For ferromagnetic metal (FM)/semiconductor (SC) structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

Science.gov (United States)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Novel room temperature ferromagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

2004-06-01

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

Pressure-induced quantum phase transition in the itinerant ferromagnet UCoGa

Czech Academy of Sciences Publication Activity Database

Míšek, Martin; Prokleška, J.; Opletal, P.; Proschek, P.; Kaštil, Jiří; Kamarád, Jiří; Sechovský, V.

2017-01-01

Roč. 7, č. 5 (2017), s. 1-4, č. článku 055712. ISSN 2158-3226 R&D Projects: GA ČR GA16-06422S Institutional support: RVO:68378271 Keywords : quantum phase transition * high pressure * itinerant ferromagnet * UCoGa Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.568, year: 2016 http://aip.scitation.org/doi/10.1063/1.4976300

Photo-induced charge-transfer phase transition of rubidium manganese hexacyanoferrate in ferromagnetic and paramagnetic states

International Nuclear Information System (INIS)

Tokoro, Hiroko; Hashimoto, Kazuhito; Ohkoshi, Shin-ichi

2007-01-01

A charge transfer phase transition with thermal hysteresis loop is observed in a series of rubidium manganese hexacyanoferrates, RbMn[Fe(China) 6 ] (1), Rb 0.88 Mn[Fe(China) 6 ] 0.96 .0.6H 2 O (2), and Rb 0.97 Mn[Fe(China) 6 ] 0.99 .0.2H 2 O (3). This phase transition is accompanied by a structural change from cubic (F4-bar 3m) to tetragonal (I4-bar m2). Its high-temperature (HT) and low-temperature (LT) phases are composed of Mn II (S=2/5)NC-Fe III (S=1/2) and Mn III (S=2)-NC-Fe II (S=0), respectively. The phase transition is caused by a metal-to-metal charge transfer from Mn II to Fe III and a Jahn-Teller distortion of the produced Mn III ion. At the ferromagnetic state in LT phase of 2, the photo-induced phase transition is observed, i.e., magnetization is quenched by the irradiation with only one shot of laser pulse. This phenomenon is caused by a photo-induced phase transition from the LT phase to the HT phase. In 3, optical switching between LT and HT phases at room temperature in paramagnetic region is observed

Non-ferromagnetic overburden casing

Science.gov (United States)

Vinegar, Harold J.; Harris, Christopher Kelvin; Mason, Stanley Leroy

2010-09-14

Systems, methods, and heaters for treating a subsurface formation are described herein. At least one system for electrically insulating an overburden portion of a heater wellbore is described. The system may include a heater wellbore located in a subsurface formation and an electrically insulating casing located in the overburden portion of the heater wellbore. The casing may include at least one non-ferromagnetic material such that ferromagnetic effects are inhibited in the casing.

Pressure-induced itinerant electron metamagnetism in UCo0.995Os0.005Al ferromagnet

Science.gov (United States)

Mushnikov, N. V.; Andreev, A. V.; Arnold, Z.

2018-05-01

The effect of external hydrostatic pressure on magnetic properties is studied for the UCo0.995Os0.005Al single crystal. At ambient pressure, the ground state is ferromagnetic. Even lowest applied pressure 0.11 GPa is sufficient to suppress ferromagnetism. A sharp metamagnetic transition is observed only in magnetic fields along the c axis of the crystal, similar to previously studied itinerant electron metamagnet UCoAl. Temperature dependence of the susceptibility for various pressures shows a broad maximum at Tmax 20 K. The experimental data are analyzed with the theory of itinerant electron metamagnetism, which considers anisotropic thermal fluctuations of the uranium magnetic moment. The observed pressure dependence of the susceptibility at Tmax and the temperature for the disappearance of the first-order metamagnetic transition are explained with the theory.

Evidence for Crossed Andreev Reflections in (100)YBa2Cu3O7+δ-SrRuO3 superconductor-ferromagnet bilayers

International Nuclear Information System (INIS)

Asulin, I.; Yuli, O.; Millo, O.; Koren, G.

2005-01-01

Full Text:Since the ferromagnetic side of a superconductor-ferromagnet junction is spin polarized, Andreev reflections are suppressed. Consequently, the proximity induced superconductor order parameter in the ferromagnet is expected to decay rapidly, on the order of a nm, the typical coherence length in a ferromagnet. Our scanning tunneling spectroscopy measurements on thin epitaxial (100)YBa 2 Cu 3 O 7+ δ-SrRuO 3 (YBaCuO-SrO) bilayers, where SrO is a ferromagnet, indeed show that on most of the junction area the superconductor order parameter vanishes in the SrO layers thicker than 8 nm. However, we find localized regions, arranged along narrow (< 10 nm) stripes, where the order parameter (superconductor-like gap structure) penetrates the ferromagnet over more than 20 nm. This is attributed to 'Crossed Andreev Reflections,' taking place at domain boundaries, where an electron from one magnetic domain is retro reflected as a hole with opposite spin in an adjacent domain. Our observation may account for the (not abundant) cases where a long-range proximity effect was found in superconductor-ferromagnet proximity systems

Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

KAUST Repository

Benali Kanoun, Mohammed; Goumri-Said, Souraya; Manchon, Aurelien; Schwingenschlö gl, Udo

2012-01-01

We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization

Competing ferromagnetic and anti-ferromagnetic interactions in iron nitride ζ-Fe2N

Science.gov (United States)

Rao, K. Sandeep; Salunke, H. G.

2018-03-01

The paper discusses the magnetic state of zeta phase of iron nitride viz. ζ-Fe2N on the basis of spin polarized first principles electronic structure calculations together with a review of already published data. Results of our first principles study suggest that the ground state of ζ-Fe2N is ferromagnetic (FM) with a magnetic moment of 1.528μB on the Fe site. The FM ground state is lower than the anti-ferromagnetic (AFM) state by 8.44 meV and non-magnetic (NM) state by 191 meV per formula unit. These results are important in view of reports which claim that ζ-Fe2N undergoes an AFM transition below 10 K and others which do not observe any magnetic transition up to 4.2 K. We argue that the experimental results of AFM transition below 10 K are inconclusive and we propose the presence of competing FM and AFM superexchange interactions between Fe sites mediated by nitrogen atoms, which are consistent with Goodenough-Kanamori-Anderson rules. We find that the anti-ferromagnetically coupled Fe sites are outnumbered by ferromagnetically coupled Fe sites leading to a stable FM ground state. A Stoner analysis of the results also supports our claim of a FM ground state.

Peculiar long-range supercurrent in superconductor-ferromagnet-superconductor junction containing a noncollinear magnetic domain in the ferromagnetic region

Energy Technology Data Exchange (ETDEWEB)

Meng, Hao, E-mail: menghao1982@shu.edu.cn [School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Wu, Xiuqiang [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Ren, Yajie [School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001 (China)

2015-01-14

We study the supercurrent in clean superconductor-ferromagnet-superconductor heterostructure containing a noncollinear magnetic domain in the ferromagnetic region. It is demonstrated that the magnetic domain can lead to a spin-flip scattering process, which reverses the spin orientations of the singlet Cooper pair and simultaneously changes the sign of the corresponding electronic momentum. If the ferromagnetic layers on both sides of magnetic domain have the same features, the long-range proximity effect will take place. That is because the singlet Cooper pair will create an exact phase-cancellation effect and gets an additional π phase shift as it passes through the entire ferromagnetic region. Then, the equal spin triplet pair only exists in the magnetic domain region and can not diffuse into the other two ferromagnetic layers. So, the supercurrent mostly arises from the singlet Cooper pairs, and the equal spin triplet pairs are not involved. This result can provide a approach for generating the long-range supercurrent.

Magnetization reversal through soliton flip in biquadratic ferromagnet with varying exchange interactions

CERN Document Server

Daniel, M

2002-01-01

We study the phenomenon of magnetization reversal in the form of a soliton flip in a biquadratic ferromagnetic spin chain induced by varying bilinear and biquadratic exchange interactions. This is carried out by analysing the evolution of the velocity and amplitude of the soliton using a perturbation analysis.

Ferromagnets as pure spin current generators and detectors

Science.gov (United States)

Qu, Danru; Miao, Bingfeng; Chien, Chia -Ling; Huang, Ssu -Yen

2015-09-08

Provided is a spintronics device. The spintronics can include a ferromagnetic metal layer, a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and a negative electrode disposed on a second surface portion of the ferromagnetic metal.

Ferromagnetism in poly(N-perfluorophenylpyrrole)

Energy Technology Data Exchange (ETDEWEB)

Čík, G., E-mail: gabriel.cik@stuba.sk [Department of Environmental Engineering, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Šeršeň, F. [Institute of Chemistry, Faculty of Natural Sciences, Comenius University, 842 15 Bratislava (Slovakia); Dlháň, L. [Department of Inorganic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Zálupský, P. [Department of Organic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Rapta, P. [Department of Physical Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Hrnčariková, K. [Department of Organic Chemistry, Faculty of Chemical and Food Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia); Plecenik, T. [Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, 842 48 Bratislava (Slovakia)

2015-10-01

Magnetic properties of the synthesized poly(N-perfluorophenylpyrrole) were studied. The synthesized polymer dissolves in common organic solvents. By the zero-field cooling-field cooling method (ZFC–FC) we found that at low temperatures (T{sub b}<50 K) the synthetic polymer reaches a state with prevailing ferromagnetism. The synthesized polymer retained ferromagnetism even at 300 K. The anomalous magnetic behavior was explained in terms of spin–spin interaction of triplet polarons. As can be seen from the calculated spin density of SOMO and SOMO 1 such a state arise as a consequence of 1-D spin interactions of polarons. Based on the calculated and visualized spin density (SOMO) on the polymer chain such interactions can be explained by the theory of flat-band-ferromagnetism. - Highlights: • We synthesized a new conducting polymer poly(N-perfluorophenylpyrrole). • By the ZFC–FC and EPR methods we measured magnetic properties of the prepared polymer. • We discussed stability and interactions of the polarons in triplet states. • At low temperatures the synthesized polymer reached ferromagnetism.

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

Science.gov (United States)

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

Defect types and room-temperature ferromagnetism in undoped rutile TiO2 single crystals

Science.gov (United States)

Li, Dong-Xiang; Qin, Xiu-Bo; Zheng, Li-Rong; Li, Yu-Xiao; Cao, Xing-Zhong; Li, Zhuo-Xin; Yang, Jing; Wang, Bao-Yi

2013-03-01

Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO2 single crystals when a magnetic field is applied parallel to the sample plane. By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy, Ti3+—VO defect complexes (or clusters) have been identified in annealed crystals at a high vacuum. We elucidate that the unpaired 3d electrons in Ti3+ ions provide the observed room-temperature ferromagnetism. In addition, excess oxygen ions in the TiO2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments.

Defect types and room-temperature ferromagnetism in undoped rutile TiO2 single crystals

International Nuclear Information System (INIS)

Li Dong-Xiang; Cao Xing-Zhong; Li Zhuo-Xin; Yang Jing; Wang Bao-Yi; Qin Xiu-Bo; Zheng Li-Rong; Li Yu-Xiao

2013-01-01

Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO 2 single crystals when a magnetic field is applied parallel to the sample plane. By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy, Ti 3+ —V O defect complexes (or clusters) have been identified in annealed crystals at a high vacuum. We elucidate that the unpaired 3d electrons in Ti 3+ ions provide the observed room-temperature ferromagnetism. In addition, excess oxygen ions in the TiO 2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments

The effects of strain on DC transverse and spin-valley Hall conductivity of ferromagnetic MoS{sub 2} and silicene

Energy Technology Data Exchange (ETDEWEB)

Yarmohammadi, Mohsen, E-mail: m.yarmohammadi69@gmail.com

2017-03-15

In this paper, we have investigated the effects of strain on DC transverse and spin-valley Hall conductivity (SHC-VHC) of two-dimensional buckled materials ferromagnetic graphene's analog, MoS{sub 2} and silicene due to their spin–orbit coupling. The Kubo formalism has been used to investigate the dynamics of carriers under strain along the armchair (AC) direction of systems in the context of the Kane–Mele Hamiltonian and the Dirac cone approximation. The effective mass of carriers increases with strain and this leads to the reduction of their transport. We have found that SHC-VHC changes symmetrically with respect to a critical strain around 13% and 45% for MoS{sub 2} and silicene, respectively. Furthermore, the reflection symmetry of silicene has been broken with electric field and a phase transition to topological insulator for strained ferromagnetic silicene has been seen. - Highlights: • Theoretical calculation of strain effects on band structure of MoS{sub 2} and silicene in the presence of electric field. • Investigation of DC transverse and spin-valley Hall conductivity of strained-MoS{sub 2} and silicene in the presence of electric field. • Theoretical calculation of external electric field effects on topological phase transition of silicene in the presence of strain.

Levitation properties of maglev systems using soft ferromagnets

Science.gov (United States)

Huang, Chen-Guang; Zhou, You-He

2015-03-01

Soft ferromagnets are widely used as flux-concentration materials in the design of guideways for superconducting magnetic levitation transport systems. In order to fully understand the influence of soft ferromagnets on the levitation performance, in this work we apply a numerical model based on the functional minimization method and the Bean’s critical state model to study the levitation properties of an infinitely long superconductor immersed in the magnetic field created by a guideway of different sets of infinitely long parallel permanent magnets with soft ferromagnets between them. The levitation force, guidance force, magnetic stiffness and magnetic pole density are calculated considering the coupling between the superconductor and soft ferromagnets. The results show that the levitation performance is closely associated with the permanent magnet configuration and with the location and dimension of the soft ferromagnets. Introducing the soft ferromagnet with a certain width in a few configurations always decreases the levitation force. However, for most configurations, the soft ferromagnets contribute to improve the levitation performance only when they have particular locations and dimensions in which the optimized location and thickness exist to increase the levitation force the most. Moreover, if the superconductor is laterally disturbed, the presence of soft ferromagnets can effectively improve the lateral stability for small lateral displacement and reduce the degradation of levitation force.

Dynamical quadrupole structure factor of frustrated ferromagnetic chain

Science.gov (United States)

Onishi, Hiroaki

2018-05-01

We investigate the dynamical quadrupole structure factor of a spin-1/2 J1-J2 Heisenberg chain with competing ferromagnetic J1 and antiferromagnetic J2 in a magnetic field by exploiting density-matrix renormalization group techniques. In a field-induced spin nematic regime, we observe gapless excitations at q = π according to quasi-long-range antiferro-quadrupole correlations. The gapless excitation mode has a quadratic form at the saturation, while it changes into a linear dispersion as the magnetization decreases.

Lattice relaxation and ferromagnetic character of (LaVO3)m/SrVO3 superlattices

KAUST Repository

Schuster, Cosima B.

2013-08-01

The experimental observation that vanadate superlattices (LaVO 3)m/SrVO3 show ferromagnetism up to room temperature (Lüders U. et al., Phys. Rev. B, 80 (2009) 241102(R)) is investigated by means of density functional theory, and the band structure for m = 5 and 6 is calculated. A buckling of the interface VO2 layers is found in both cases, but subtle differences in bond length lead to very different properties for even and odd values of m: in the even case, the two interface VO2 layers effectively decouple from the adjacent LaO layers due to a strong bond length enhancement. This results into a local inversion of the orbital occupancy and to the confinement of the charge carriers. In the odd case, the amplitude of the bond length variation is smaller, so that the charge carriers spill into the deeper-lying VO2 layers, and spin-polarised interfaces are obtained. © Copyright EPLA, 2013.

A model of the radiation-induced bystander effect based on an analogy with ferromagnets. Application to modelling tissue response in a uniform field

Science.gov (United States)

Vassiliev, O. N.

2014-12-01

We propose a model of the radiation-induced bystander effect based on an analogy with magnetic systems. The main benefit of this approach is that it allowed us to apply powerful methods of statistical mechanics. The model exploits the similarity between how spin-spin interactions result in correlations of spin states in ferromagnets, and how signalling from a damaged cell reduces chances of survival of neighbour cells, resulting in correlated cell states. At the root of the model is a classical Hamiltonian, similar to that of an Ising ferromagnet with long-range interactions. The formalism is developed in the framework of the Mean Field Theory. It is applied to modelling tissue response in a uniform radiation field. In this case the results are remarkably simple and at the same time nontrivial. They include cell survival curves, expressions for the tumour control probability and effects of fractionation. The model extends beyond of what is normally considered as bystander effects. It offers an insight into low-dose hypersensitivity and into mechanisms behind threshold doses for deterministic effects.

Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

International Nuclear Information System (INIS)

Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

2001-01-01

The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

Ferromagnetic and twin domains in LCMO manganites

International Nuclear Information System (INIS)

Jung, G.; Markovich, V.; Mogilyanski, D.; Beek, C. van der; Mukovskii, Y.M.

2005-01-01

Ferromagnetic and twin domains in lightly Ca-doped La 1-x Ca x MnO 3 single crystals have been visualized and investigated by means of the magneto-optical technique. Both types of domains became visible below the Curie temperature. The dominant structures seen in applied magnetic field are associated with magneto-crystalline anisotropy and twin domains. In a marked difference to the twin domains which appear only in applied magnetic field, ferromagnetic domains show up in zero applied field and are characterized by oppositely oriented spontaneous magnetization in adjacent domains. Ferromagnetic domains take form of almost periodic, corrugated strip-like structures. The corrugation of the ferromagnetic domain pattern is enforced by the underlying twin domains

Excitation spectrum of ferromagnetic xxz-chains

International Nuclear Information System (INIS)

Schneider, T.; Stoll, E.

1983-01-01

In the history of xxz-Heisenberg spin chains, understanding of the dynamic form factors (DFF) is much less advanced. In this paper the DFF of ferromagnetic xxz chains as a tool to probe and interpret excitation spectrum is reviewed. The Isingheisenberg chain, and the Planar-Heisenberg chain (where HF approximations become exact) are studied. The results provide instructive connections between spin systems, interacting fermions and bosons. Various new aspects--thermally induced bound state effects in terms of central peaks in DFF for Isinglike xxz chains; the possibility to observe bound states in S /SUB zz/ (q,w) accessible by neutron scattering techniques, in the planar system--are found

Ferromagnetic Swimmers - Devices and Applications

Science.gov (United States)

Hamilton, Joshua; Petrov, Peter; Winlove, C. Peter; Gilbert, Andrew; Bryan, Matthew; Ogrin, Feodor

2017-11-01

Microscopic swimming devices hold promise for radically new applications in lab-on-a-chip and microfluidic technology, diagnostics and drug delivery etc. We propose a new class of autonomous ferromagnetic swimming devices, actuated and controlled solely by an oscillating magnetic field. Experimentally, these devices (3.6 mm) are based on a pair of interacting ferromagnetic particles of different size and different anisotropic properties joined by an elastic link and actuated by an external time-dependent magnetic field. The net motion is generated through a combination of dipolar interparticle gradient forces, time-dependent torque and hydrodynamic coupling. We investigate the dynamic performance of a prototype (3.6 mm) of the ferromagnetic swimmer in fluids of different viscosity as a function of the external field parameters and demonstrate stable propulsion over a wide range of Reynolds numbers. Manipulation of the external magnetic field resulted in robust control over the speed and direction of propulsion. We also demonstrate our ferromagnetic swimmer working as a macroscopic prototype of a microfluidic pump. By physically tethering the swimmer, instead of swimming, the swimmer generates a directional flow of liquid around itself.

Effects of Rashba and Dresselhaus spin-orbit couplings on itinerant ferromagnetism

Science.gov (United States)

Liu, Mengnan; Xu, Liping; Wan, Yong; Yan, Xu

2018-02-01

Based on Stoner model for itinerant ferromagnet, effects of spin-orbit coupling (SOC) on ferromagnetism were investigated at zero temperature. It was found that SOC will enhance the critical ferromagnetic exchange interaction for spontaneous magnetization, and then suppress ferromagnetism. In case of the coexistence of Rashba and Dresselhaus SOCs, the mixture of the two spin-orbit couplings showed stronger suppressed effect on ferromagnetism than only one kind of SOC alone. When the two SOCs mixed with equal magnitude, ferromagnetism in itinerant ferromagnet was suppressed to minimum.

Laser-induced ultrafast demagnetization time and spin moment in ferromagnets: First-principles calculation

Energy Technology Data Exchange (ETDEWEB)

Zhang, G. P., E-mail: gpzhang@indstate.edu [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States); Si, M. S. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); George, Thomas F. [Office of the Chancellor and Center for Nanoscience, Departments of Chemistry and Biochemistry and Physics and Astronomy, University of Missouri-St. Louis, St. Louis, Missouri 63121 (United States)

2015-05-07

When a laser pulse excites a ferromagnet, its spin undergoes a dramatic change. The initial demagnetization process is very fast. Experimentally, it is found that the demagnetization time is related to the spin moment in the sample. In this study, we employ the first-principles method to directly simulate such a process. We use the fixed spin moment method to change the spin moment in ferromagnetic nickel, and then we employ the Liouville equation to couple the laser pulse to the system. We find that in general the dependence of demagnetization time on the spin moment is nonlinear: It decreases with the spin moment up to a point, after which an increase with the spin moment is observed, followed by a second decrease. To understand this, we employ an extended Heisenberg model, which includes both the exchange interaction and spin-orbit coupling. The model directly links the demagnetization rate to the spin moment itself and demonstrates analytically that the spin relaxes more slowly with a small spin moment. A future experimental test of our predictions is needed.

Ferromagnetic Objects Magnetovision Detection System.

Science.gov (United States)

Nowicki, Michał; Szewczyk, Roman

2013-12-02

This paper presents the application of a weak magnetic fields magnetovision scanning system for detection of dangerous ferromagnetic objects. A measurement system was developed and built to study the magnetic field vector distributions. The measurements of the Earth's field distortions caused by various ferromagnetic objects were carried out. The ability for passive detection of hidden or buried dangerous objects and the determination of their location was demonstrated.

Carrier dynamics in graphene. Ultrafast many-particle phenomena

Energy Technology Data Exchange (ETDEWEB)

Malic, E.; Brem, S.; Jago, R. [Department of Physics, Chalmers University of Technology, Goeteborg (Sweden); Winzer, T.; Wendler, F.; Knorr, A. [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany); Mittendorff, M.; Koenig-Otto, J.C.; Schneider, H.; Helm, M.; Winnerl, S. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Ploetzing, T.; Neumaier, D. [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany)

2017-11-15

Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Magnetic profiles in ferromagnetic/superconducting superlattices.

Energy Technology Data Exchange (ETDEWEB)

te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

2007-02-28

The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

Towards ferromagnet/superconductor junctions on graphene

International Nuclear Information System (INIS)

Pakkayil, Shijin Babu

2015-01-01

Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

Towards ferromagnet/superconductor junctions on graphene

Energy Technology Data Exchange (ETDEWEB)

Pakkayil, Shijin Babu

2015-07-01

Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

Eddy current inspection of mildly ferromagnetic tubing

International Nuclear Information System (INIS)

Mayo, W.R.; Carter, J.R.

1984-02-01

The past decade has seen the development of eddy current probes for inspection of the mildly ferro-magnetic alloy Monel 400. Due to the rapid advances in permanent magnet technology similar probes have been upgraded to magnetically saturate, and hence inspect, the duplex stainless steel Sandvik 3RE60, which has saturation induction more than twice that of Monel 400. Prototypes of these probes have been tested in three ways: saturation capability, quality of typical eddy current data, and ability to eliminate permeability induced signals. Successful laboratory testing, potential applications, and limitations of these type probes are discussed

Ferromagnetic semiconductor-metal transition in europium monoxide

International Nuclear Information System (INIS)

Arnold, M.

2007-10-01

We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO 1-x or Gd-doped Gd x Eu 1-x 0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

Ferromagnetic Objects Magnetovision Detection System

Directory of Open Access Journals (Sweden)

Michał Nowicki

2013-12-01

Full Text Available This paper presents the application of a weak magnetic fields magnetovision scanning system for detection of dangerous ferromagnetic objects. A measurement system was developed and built to study the magnetic field vector distributions. The measurements of the Earth’s field distortions caused by various ferromagnetic objects were carried out. The ability for passive detection of hidden or buried dangerous objects and the determination of their location was demonstrated.

Effect of nanostructure layout on spin pumping phenomena in antiferromagnet/nonmagnetic metal/ferromagnet multilayered stacks

Directory of Open Access Journals (Sweden)

A. F. Kravets

2017-05-01

Full Text Available In this work we focus on magnetic relaxation in Mn80Ir20(12 nm/Cu(6 nm/Py(dF antiferromagnet/Cu/ferromagnet (AFM/Cu/FM multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer – the spin-pumping effect – is detected as an increase in the linewidth of the ferromagnetic resonance (FMR spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional to the thickness of the Py layer. We show that this thickness dependence likely originates from the dissipative dynamics of the free and localized spins in the AFM layer. The results obtained could be used for tailoring the dissipative properties of spintronic devices incorporating antiferromagnetic layers.

Effect of Annealing in Magnetic Field on Ferromagnetic Nanoparticle Formation in Cu-Al-Mn Alloy with Induced Martensite Transformation.

Science.gov (United States)

Titenko, Anatoliy; Demchenko, Lesya

2016-12-01

The paper considers the influence of aging of high-temperature phase on subsequent martensitic transformation in Cu-Al-Mn alloy. The morphology of behavior of martensitic transformation as a result of alloy aging under annealing in a constant magnetic field with different sample orientation relatively to the field direction and without field was studied for direct control of the processes of martensite induction at cooling. Temperature dependences of electrical resistance, magnetic susceptibility, and magnetization, as well as field dependences of magnetization, and phase composition were found. The tendency to the oriented growth of precipitated ferromagnetic phase nanoparticles in a direction of applied field and to an increase of their volume fraction under thermal magnetic treatment of material that favors a reversibility of induced martensitic transformation is observed.

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

Science.gov (United States)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Klimeck, Gerhard

2015-01-01

Bi2Te3 and Bi2Se3 are well known 3D-topological insulators (TI). Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as building blocks for a variety of applications that involve tuning their dispersion relationship and opening a band gap. A band gap can be opened either by breaking time reversal symmetry, the proximity effect of a superconductor or ferromagnet or adjusting the dimensionality of the TI material. In this work, methods that can be employed to easily open a band gap for the TI surface states are assessed. Two approaches are described: (1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. (2) An s-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. Finally, the hybridization of the surface Dirac cones can be controlled by reducing the thickness of the topological insulator film. It is shown that this alters the band gap significantly.

Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO2 nanoparticles

International Nuclear Information System (INIS)

Gómez-Polo, C.; Larumbe, S.; Monge, M.

2014-01-01

Highlights: • N-doped TiO 2 anatase nanoparticles were obtained by sol–gel. • The nanoparticle size, controlled by the N doping, determines lattice parameters. • Correlation between room temperature ferromagnetism and absorption red-shift. • Oxygen vacancies reinforce both phenomena. • Metal transition impurities contribute to the room temperature ferromagnetism. - Abstract: In this work, room-temperature ferromagnetism and the red-shift of the optical absorption is analyzed in nitrogen doped TiO 2 semiconductor nanoparticles. The nanoparticles were synthesized by the sol–gel method using urea as the nitrogen source. Titanium Tetraisopropoxide (TTIP) was employed as the alkoxyde precursor and dissolved in ethanol. The as prepared gels were dried and calcined in air at 300 °C. Additionally, post-annealing treatments under vacuum atmosphere were performed to modify the oxygen stoichiometry of the samples. The anatase lattice parameters, analyzed by means of powder X-ray diffractometry, depend on the nanometer grain size of the nanoparticles (increase and decrease, respectively, of the tetragonal a and c lattice parameters with respect to the bulk values). The diffuse reflectance ultraviolet–visible (UV–Vis) absorbance spectra show a clear red-shift as consequence of the nitrogen and the occurrence of intragap energy levels. The samples display ferromagnetic features at room temperature that are reinforced with the nitrogen content and after the post annealings in vacuum. The results indicate a clear correlation between the room temperature ferromagnetism and the shift of the absorbance spectrum. In both phenomena, oxygen vacancies (either induced by the nitrogen doping or by the post vacuum annealings) play a dominant role. However, we conclude the existence of very low concentration of diluted transition metal impurities that determine the room ferromagnetic response (bound magnetic polaron BMP model). The contraction of the c soft axis of the

Spin-dependent transport and functional design in organic ferromagnetic devices

Directory of Open Access Journals (Sweden)

Guichao Hu

2017-09-01

Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

Flux penetration in a ferromagnetic/superconducting bilayer

Energy Technology Data Exchange (ETDEWEB)

Adamus, Z.; Cieplak, M.Z.; Abal' Oshev, A. [Polish Acad Sci, Inst Phys, PL-02668 Warsaw, (Poland); Konczykowski, M. [CEA/DSM/DRECAM, Laboratoire des Solides Irradies, F-91191 Gif Sur Yvette, (France); Konczykowski, M. [Ecole Polytech, CNRS - UMR 7642, F-91128 Palaiseau, (France); Cheng, X.M.; Zhu, L.Y.; Chien, C.L. [Johns Hopkins Univ, Dept Phys and Astron, Baltimore, MD 21218 (United States)

2007-07-01

An array of miniature Hall sensors is used to study the magnetic flux penetration in a ferromagnetic/superconducting bilayer consisting of Nb as a superconducting layer and Co/Pt multilayer with perpendicular magnetic anisotropy as a ferromagnetic layer, separated by an amorphous Si layer to avoid the proximity effect. It is found that the magnetic domains in the ferromagnetic layer create a large edge barrier in the superconducting layer which delays flux penetration. The smooth flux profiles observed in the absence of magnetic pinning change into terraced profiles in the presence of domains. (authors)

Singular ferromagnetic susceptibility of the transverse-field Ising antiferromagnet on the triangular lattice

Science.gov (United States)

Biswas, Sounak; Damle, Kedar

2018-02-01

A transverse magnetic field Γ is known to induce antiferromagnetic three-sublattice order of the Ising spins σz in the triangular lattice Ising antiferromagnet at low enough temperature. This low-temperature order is known to melt on heating in a two-step manner, with a power-law ordered intermediate temperature phase characterized by power-law correlations at the three-sublattice wave vector Q : ˜cos(Q .R ⃗) /|R⃗| η (T ) with the temperature-dependent power-law exponent η (T )∈(1 /9 ,1 /4 ) . Here, we use a quantum cluster algorithm to study the ferromagnetic easy-axis susceptibility χu(L ) of an L ×L sample in this power-law ordered phase. Our numerical results are consistent with a recent prediction of a singular L dependence χu(L ) ˜L2 -9 η when η (T ) is in the range (1 /9 ,2 /9 ) . This finite-size result implies, via standard scaling arguments, that the ferromagnetic susceptibility χu(B ) to a uniform field B along the easy axis is singular at intermediate temperatures in the small B limit, χu(B ) ˜|B| -4/-18 η 4 -9 η for η (T )∈(1 /9 ,2 /9 ) , although there is no ferromagnetic long-range order in the low temperature state. Additionally we establish similar two-step melting behavior (via a study of the order parameter susceptibility χQ) in the case of the ferrimagnetic three-sublattice ordered phase which is stabilized by ferromagnetic next-neighbor couplings (J2) and confirm that the ferromagnetic susceptibility obeys the predicted singular form in the associated power-law ordered phase.

Activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine

International Nuclear Information System (INIS)

Jayalakshmi, G.; Gopalakrishnan, N.; Balasubramanian, T.

2013-01-01

Highlights: ► Room temperature ferromagnetism (RTFM) is observed in surface functionalized ZnO films. ► Surface functionalization is a new approach to make ZnO as ferromagnetic. ► The RTFM is attributed to the interaction between the adsorbates and the surface of ZnO. ► The oxygen vacancies are passivated upon surface functionalization. - Abstract: In this paper, we report the activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine. The pure and surface functionalized ZnO films have been examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM) measurements. XRD measurements show that all the films have single phase and (0 0 2) preferred orientation. The chemical bonding of ZnO with thiol and amine molecules has been confirmed by XPS measurements. The quenching of visible emission in PL spectra indicates that the surface defects are passivated by functionalization with thiol and amine. Surface functionalization of ZnO films with thiol and amine induces robust room temperature ferromagnetism in ZnO films as evidenced from VSM measurements. It is concluded that the observed ferromagnetic behavior in functionalized ZnO films is attributed to the different electronegativity of the atom in the thiol (or amine) and the surface of ZnO.

Josephson junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Wild, Georg Hermann

2012-01-01

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Josephson junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Wild, Georg Hermann

2012-03-04

We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

Half-metallic ferromagnetism in nitrogen - doped ionic insulator (Li2O): a DFT study

International Nuclear Information System (INIS)

Eithiraj, R.D.; Kalpana, G.

2010-01-01

The tight binding linear muffin-tin orbital (TB-LMTO) method, is used to study the electronic structure and magnetism in nitrogen - doped Li 2 O (antifluorite - CaF 2 structure). Total energy calculations show that the antifluorite ferromagnetic state is more stable than the antifluorite non-magnetic state at equilibrium volume. Ground state properties such as equilibrium lattice constant and bulk modulus were calculated. The calculations reveal that non-magnetic impurities can induce stable half-metallic ferromagnetic ground state in Li 2 O. The magnetic moment of nitrogen doped Li 2 O can be tuned over a range between 1.00 μ B and 3.00 μ B by changing the concentration of nitrogen from 25% to 75%. (author)

Oxygen vacancy-induced room-temperature ferromagnetism in D—D neutron irradiated single-crystal TiO2 (001) rutile

Science.gov (United States)

Xu, Nan-Nan; Li, Gong-Ping; Pan, Xiao-Dong; Wang, Yun-Bo; Chen, Jing-Sheng; Bao, Liang-Man

2014-10-01

Remarkable room temperature ferromagnetism in pure single-crystal rutile TiO2 (001) samples irradiated by D—D neutron has been investigated. By combining X-ray diffraction and positron annihilation lifetime, the contracted lattice has been clearly identified in irradiated TiO2, where Ti4+ ions can be easily reduced to the state of Ti3+. As there were no magnetic impurities that could contaminate the samples during the whole procedure, some Ti3+ ions reside on interstitial or substituted sites accompanied by oxygen vacancies should be responsible for the ferromagnetism.

Magnetic evolution of itinerant ferromagnetism and interlayer antiferromagnetism in cerium doped LaCo{sub 2}P{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Tian, Yong; Kong, Yixiu; Liu, Kai; Zhang, Anmin [Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872 (China); He, Rui [Department of Physics, University of Northern Iowa, Cedar Falls, Iowa 50614 (United States); Zhang, Qingming, E-mail: qmzhang@ruc.edu.cn [Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872 (China)

2017-05-01

ThCr{sub 2}Si{sub 2}-type phosphide ACo{sub 2}P{sub 2} (A=Eu, La, Pr, Nd, Ce) has the same structure as iron arsenides, but their magnetic behaviors are quite distinct. In this paper, we grew a series of La{sub 1−x}Ce{sub x}Co{sub 2}P{sub 2} single crystals (x=0.0 to1.0), made structural and magnetic characterizations. We found the introduction of cerium induces a rapid decrease of c-axis and a change from ferromagnetic to antiferromagnetic states. Compared to other trivalent doped compounds, the enhancement of ferromagnetism with doping is suppressed and the transition from ferromagnetism to antiferromagnetism appear earlier. By employing first-principles band-structure calculations, we identify the increase of Ce valence suppress the itinerant ferromagnetism and leading to formation of P-P bonding with the shortening of c-axis. The bonding effectively drives an increase of interlayer antiferromagnetic interaction, eventually leads to antiferromagnetic ordering of cobalt in high-doping region.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

Science.gov (United States)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

Transition from weak ferromagnetism to metamagnetism in the itinerant-electron system Y{sub 1-x}La{sub x}Co{sub 9}Si{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Nishiyama, M; Kohara, T [Graduate School of Material Science, University of Hyogo, Kamigori, Ako-gun, Hyogo 678-1297 (Japan); Nakamura, H [Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501 (Japan)

2010-01-15

The magnetism of solid solution Yi{sub 1-x}La{sub x}Co{sub 9}Si{sub 4} between strongly enhanced Pauli paramagnetic LaCo{sub 9}Si{sub 4} and weakly ferromagnetic YCo{sub 9}Si{sub 4} has been investigated. The Curie temperature T{sub C} in the ferromagnetic region and the metamagnetic transition field H{sub M} in the paramagnetic region change continuously against x and approach zero at the same composition x {approx_equal} 0.15, suggesting the presence of a critical point from spontaneous to field-induced ferromagnetism.

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Chaotic Dynamical Ferromagnetic Phase Induced by Nonequilibrium Quantum Fluctuations

Science.gov (United States)

Lerose, Alessio; Marino, Jamir; Žunkovič, Bojan; Gambassi, Andrea; Silva, Alessandro

2018-03-01

We investigate the robustness of a dynamical phase transition against quantum fluctuations by studying the impact of a ferromagnetic nearest-neighbor spin interaction in one spatial dimension on the nonequilibrium dynamical phase diagram of the fully connected quantum Ising model. In particular, we focus on the transient dynamics after a quantum quench and study the prethermal state via a combination of analytic time-dependent spin wave theory and numerical methods based on matrix product states. We find that, upon increasing the strength of the quantum fluctuations, the dynamical critical point fans out into a chaotic dynamical phase within which the asymptotic ordering is characterized by strong sensitivity to the parameters and initial conditions. We argue that such a phenomenon is general, as it arises from the impact of quantum fluctuations on the mean-field out of equilibrium dynamics of any system which exhibits a broken discrete symmetry.

Ferromagnetic semiconductor-metal transition in europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Arnold, M.

2007-10-15

We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO{sub 1-x} or Gd-doped Gd{sub x}Eu{sub 1-x}0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

Single-magnon tunneling through a ferromagnetic nanochain

International Nuclear Information System (INIS)

Petrov, E.G.; Ostrovsky, V.

2010-01-01

Magnon transmission between ferromagnetic contacts coupled by a linear ferromagnetic chain is studied at the condition when the chain exhibits itself as a tunnel magnon transmitter. It is shown that dependently on magnon energy at the chain, a distant intercontact magnon transmission occurs either in resonant or off-resonant tunneling regime. In the first case, a transmission function depends weakly on the number of chain sites whereas at off-resonant regime the same function manifests an exponential drop with the chain length. Change of direction of external magnetic field in one of ferromagnetic contacts blocks a tunnel transmission of magnon.

Room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride induced by milling and annealing

Energy Technology Data Exchange (ETDEWEB)

Bolokang, Amogelang S., E-mail: Sylvester.Bolokang@transnet.net [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Transnet Engineering, Product Development, Private Bag X 528, Kilnerpark, 0127 (South Africa); Tshabalala, Zamaswazi P. [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Malgas, Gerald F. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535 (South Africa); Kortidis, Ioannis [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); West Virginia University, Department of Mechanical & Aerospace Engineering, Evansdale Campus, Morgantown, WV, 26506 (United States); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA9300 (South Africa); Motaung, David E., E-mail: dmotaung@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa)

2017-06-01

We report on the room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride prepared by milling and annealing at 1100 °C in a nitrogen gas environment. Structural analyses revealed a metastable orthorhombic TiO{sub 2} phase after milling for 120 h. The 120 h milled TiO{sub 2} particles and subsequently annealed in nitrogen gas at 1100 °C showed the formation of titanium oxynitride (TiO{sub x}N{sub y}) with a tetragonal crystal structure. An FCC metastable TiO{sub x}N{sub y} phase was also observed with a lattice parameter a = 4.235 Å. The vibrating sample magnetometer and electron paramagnetic analyses showed that the milled and TiO{sub x}N{sub y} samples possess room temperature ferromagnetism. Gas sensing measurements were carried out toward CH{sub 4} and H{sub 2} gases. The TiO{sub x}N{sub y} nanostructures demonstrated higher sensing response and selectivity to CH{sub 4} gas at room temperature. The enhanced response of 1010 and sensitivity of 50.12 ppm{sup -1} at a concentration of 20 ppm CH{sub 4} are associated with higher surface area, pore diameter and surface defects such as oxygen vacancies and Ti{sup 3+}, as evidenced from the Brunauer–Emmet–Teller, photoluminescence, electron paramagnetic resonance and x-ray photoelectron analyses. - Highlights: • Ball milled of TiO{sub 2} structure revealed metastable orthorhombic phase. • Upon nitridation tetragonal and FCC TiO{sub x}N{sub y} crystal structures were induced. • The magnetic properties of TiO{sub 2} nanoparticles was transformed by milling. • TiO{sub x}N{sub y} sensing response for CH{sub 4} gas at room temperature was high.

Drug loaded silica coated MnFe2O4 ferromagnetic biomaterials for targeted cancer treatment

Science.gov (United States)

Anand, Vikas; Singh, K. J.; Kaur, Kulwinder; Bhatia, Gaurav

2017-05-01

Magnetically attracted silica coated MnFe2O4 samples have been prepared by using co-precipitation method. Structural changes have been confirmed from XRD spectra. Ferromagnetic behavior of samples has been studied by using vibration sample magnetometer. Cytotoxicity and cell culture of samples have been investigated by using human MG63 cell line and found that sample provide a healthy environment to the growth of cell lines. Drug carrier ability of sample has been checked with gentamycin as an antibiotic and results show that sample can be used as excellent drug carriers. Drug loaded samples can be easily targeted to specific area due to their attractive nature towards external magnetic field. Moreover, magnetic nanoparticles can also be used to kill the cancer cells by using hyperthermia technique. Hyperthermia is a process to raise the temperature of surrounding cells in the presence of external AC magnetic field above the maximum temperature limit for surviving of the cancer cells. Cancer cell can survive only up to 47°C. After that cancer cells start to die, but healthy cells can easily survive up to higher temperature. Our results indicate that prepared samples possess good drug carrier ability and hence, can be potential candidates for cancer cell treatment.

A novel magnetoresistance induced by charge ordering in ferromagnetic/charge-ordered/ferromagnetic trilayers

Science.gov (United States)

Wang, Haiou; Li, Jinwei; Su, Kunpeng; Huo, Dexuan; Tan, Weishi

2015-10-01

Microstructure, magnetoresistance (MR) and magnetic properties of Pr0.7Sr0.3MnO3/La0.5Ca0.5MnO3/Pr0.7Sr0.3MnO3 trilayers, which are shown to be tunable with different La0.5Ca0.5MnO3 spacer thickness, are investigated. The trilayer with 6 nm thick La0.5Ca0.5MnO3 spacer show \\text{MR}∼37{%} at 195 K in 1 T and \\text{MR}∼80{%} at 220 K in 9 T, which is realized through the double-exchange mechanism. In contrast, trilayers with the thicker La0.5Ca0.5MnO3 spacer show enhanced MR at a wide low-temperature range. The obtained \\text{MR}∼52{%} at 50 K in 1 T in the trilayer with 18 nm thick La0.5Ca0.5MnO3 spacer is superior to that of other magnetic nanoscales. We surmise that this MR originates in the ferromagnetic/antiferromagnetic competition accompanied with the formation of a charge-ordered antiferromagnetic state and the collapse of the charge-ordered state at the applied magnetic field, rather than in the double-exchange mechanism. Large and tunable MR can be realized by controlling the strain state (the thickness of the La0.5Ca0.5MnO3 spacer), which can be applied in the used devices.

Magnetic excitons in singlet-ground-state ferromagnets

DEFF Research Database (Denmark)

Birgeneau, R.J.; Als-Nielsen, Jens Aage; Bucher, E.

1971-01-01

The authors report measurements of the dispersion of singlet-triplet magnetic excitons as a function of temperature in the singlet-ground-state ferromagnets fcc Pr and Pr3Tl. Well-defined excitons are observed in both the ferromagnetic and paramagnetic regions, but with energies which are nearly...

Field induced ferromagnetic fraction enlargement in phase separated La_0.5Ca_0.5MnO_3

Science.gov (United States)

Ghivelder, Luis; Freitas, R. S.; Sacanel, J.; Parisi, F.; Levy, P.

2001-03-01

A systematic study of the magnetic and transport properties of a series of phase separated La_0.5Ca_0.5MnO3 compounds is reported. The investigated samples all have the same composition but different grain sizes, which modifies the volume fraction of the coexisting ferromagnetic (FM) and antiferromagnetic charge-ordered (AFM-CO) phases. Magnetoresistance and magnetization measurements were performed with two different experimental procedures: a standard field-cooled cooling (FC) mode, and a second method in which the field is turned on only while measuring each data point, and switched off while cooling the samples. Magnetization and magnetoresistance measurements display big differences when comparing the data obtained with the different procedures. The overall results are interpret in terms of a field induced FM fraction enlargement. In transport measurements this effect yield a percolative transition. Magnetization data shows evidence for the formation of AFM-CO regions within the FM phase. * e-mail: luisghiv@if.ufrj.br

Room temperature ferromagnetism and absorption red-shift in nitrogen-doped TiO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Gómez-Polo, C., E-mail: gpolo@unavarra.es [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Larumbe, S. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Monge, M. [Departamento de Química, Universidad de la Rioja, Centro de Investigación en Síntesis Química (CISQ), Complejo Científico Tecnológico, 26006 Logroño (Spain)

2014-11-05

Highlights: • N-doped TiO{sub 2} anatase nanoparticles were obtained by sol–gel. • The nanoparticle size, controlled by the N doping, determines lattice parameters. • Correlation between room temperature ferromagnetism and absorption red-shift. • Oxygen vacancies reinforce both phenomena. • Metal transition impurities contribute to the room temperature ferromagnetism. - Abstract: In this work, room-temperature ferromagnetism and the red-shift of the optical absorption is analyzed in nitrogen doped TiO{sub 2} semiconductor nanoparticles. The nanoparticles were synthesized by the sol–gel method using urea as the nitrogen source. Titanium Tetraisopropoxide (TTIP) was employed as the alkoxyde precursor and dissolved in ethanol. The as prepared gels were dried and calcined in air at 300 °C. Additionally, post-annealing treatments under vacuum atmosphere were performed to modify the oxygen stoichiometry of the samples. The anatase lattice parameters, analyzed by means of powder X-ray diffractometry, depend on the nanometer grain size of the nanoparticles (increase and decrease, respectively, of the tetragonal a and c lattice parameters with respect to the bulk values). The diffuse reflectance ultraviolet–visible (UV–Vis) absorbance spectra show a clear red-shift as consequence of the nitrogen and the occurrence of intragap energy levels. The samples display ferromagnetic features at room temperature that are reinforced with the nitrogen content and after the post annealings in vacuum. The results indicate a clear correlation between the room temperature ferromagnetism and the shift of the absorbance spectrum. In both phenomena, oxygen vacancies (either induced by the nitrogen doping or by the post vacuum annealings) play a dominant role. However, we conclude the existence of very low concentration of diluted transition metal impurities that determine the room ferromagnetic response (bound magnetic polaron BMP model). The contraction of the c soft axis

Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

Directory of Open Access Journals (Sweden)

P. A. Bhobe

2015-10-01

Full Text Available Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K_{2}Cr_{8}O_{16}, which exhibits a temperature-dependent (T-dependent paramagnetic-to-ferromagnetic-metal transition at T_{C}=180  K and transforms into a ferromagnetic insulator below T_{MI}=95  K. We observe clear T-dependent dynamic valence (charge fluctuations from above T_{C} to T_{MI}, which effectively get pinned to an average nominal valence of Cr^{+3.75} (Cr^{4+}∶Cr^{3+} states in a 3∶1 ratio in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T-dependent BCS-type energy gap, with 2G(0∼3.5(k_{B}T_{MI}∼35  meV. First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U∼4  eV, establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d-electrons/Cr and the half-metallic ferromagnetism in the t_{2g} up-spin band favor a low-energy Peierls metal-insulator transition.

High-field susceptibility in ferromagnetic NpOs2

International Nuclear Information System (INIS)

Dunlap, B.D.; Aldred, A.T.; Lam, D.J.; Davidson, G.R.

1975-01-01

NpOs 2 is known to be a ferromagnet with a Curie temperature of 7.5 0 K. Previous bulk magnetization measurements indicated a field-induced magnetization even well below the transition temperature. By a measurement of the local high-field susceptibility, using the Moessbauer effect in 237 Np, a susceptibility of (1.2 +- 0.2) x 10 -2 emu/mole at 1.6 0 K is obtained, in general agreement with the bulk measurement. Such a large susceptibility is best understood by a model f itinerant magnetism, although other properties of the material indicate localized behavior

Ferromagnetism in Cr-doped passivated AlN nanowires

KAUST Repository

Kanoun, Mohammed; Goumri-Said, Souraya; Schwingenschlö gl, Udo

2014-01-01

We apply first principles calculations to predict the effect of Cr doping on the electronic and magnetic properties of passivated AlN nanowires. We compare the energetics of the possible dopant sites and demonstrate the favorable configuration ferromagnetic ordering. The charge density of the pristine passivated AlN nanowires is used to elucidate the bonding character. Spin density maps demonstrate an induced spin polarization for N atoms next to dopant atoms, though most of the magnetism is carried by the Cr atoms. Cr-doped AlN nanowires turn out to be interesting for spintronic devices. © 2014 the Partner Organisations.

An electromagnetically actuated fiber optic switch using magnetized ferromagnetic materials

Science.gov (United States)

Pandojirao-S, Praveen; Dhaubanjar, Naresh; Phuyal, Pratibha C.; Chiao, Mu; Chiao, J.-C.

2008-03-01

This paper presents the design, fabrication and testing of a fiber optic switch actuated electromagnetically. The ferromagnetic gel coated optical fiber is actuated using external electromagnetic fields. The ferromagnetic gel consists of ferromagnetic powders dispersed in epoxy. The fabrication utilizes a simple cost-effective coating setup. A direct fiberto-fiber alignment eliminates the need for complementary optical parts and the displacement of fiber switches the laser coupling. The magnetic characteristics of magnetized ferromagnetic materials are performed using alternating gradient magnetometer and the magnetic hysteresis curves are measured for different ferromagnetic materials including iron, cobalt, and nickel. Optical fiber switches with various fiber lengths are actuated and their static and dynamic responses for the same volume of ferromagnetic gel are summarized. The highest displacement is 1.345 mm with an input current of 260mA. In this paper, the performance of fiber switches with various coating materials is presented.

Neutron depolarization study of static and dynamic magnetic properties of ferromagnets

International Nuclear Information System (INIS)

Stuesser, N.

1986-01-01

In this thesis neutron depolarization experiments are performed on amorphous and crystalline ferromagnetic materials. The subjects studied are concerned with 'domain structure in magnetically weak uniaxial amorphous ferromagnetic ribbons', 'static critical behaviour at the ferromagnetic-paramagnetic phase transition', 'small magnetic anisotropy in nickel near T c ', and 'magnetization reversal in conducting ferromagnets'. 87 refs.; 37 figs.; 3 tabs

Motions and Hull-Induced Bridging-Structure Loads for a Small Waterplane Area, Twin-Hulled, Attack Aircraft Carrier in Waves

National Research Council Canada - National Science Library

Jones, Harry D; Gerzina, David M

1973-01-01

... small waterplane area, twin-hulled, attack aircraft carrier in waves. Motions of the model were measured, together with the forces and moments induced by the hulls on the cross structure spanning the two hulls...

The ferromagnetic shape-memory effect in Ni-Mn-Ga

International Nuclear Information System (INIS)

Marioni, M.A.; O'Handley, R.C.; Allen, S.M.; Hall, S.R.; Paul, D.I.; Richard, M.L.; Feuchtwanger, J.; Peterson, B.W.; Chambers, J.M.; Techapiesancharoenkij, R.

2005-01-01

Active materials have long been used in the construction of sensors and devices. Examples are piezo-electric ceramics and shape memory alloys. The more recently developed ferromagnetic shape-memory alloys (FSMAs) have received considerable attention due to their large magnetic field-induced, reversible strains (up to 10%). In this article, we review the basic physical characteristics of the FSMA Ni-Mn-Ga (crystallography, thermal, mechanical and magnetic behavior). Also, we present some of the works currently under way in the areas of pulse-field and acoustic-assisted actuation, and vibration energy absorption

Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

International Nuclear Information System (INIS)

An Xingtao; Liu Jianjun

2008-01-01

Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

Ferromagnetism regulated by edged cutting and optical identification in monolayer PtSe2 nanoribbons

Science.gov (United States)

Meng, Ming; Zhang, QiZhen; Wang, Lifen; Shan, Yun; Du, Yuandong; Qin, Nan; Liu, Lizhe

2018-06-01

Regulation of ferromagnetism and electronic structure in PtSe2 nanostructures has attracted much attention because of its potential in spintronics. The magnetic and optical properties of PtSe2 nanoribbons with different edge reconstruction and external deformations are calculated by density function theory. In 1 T phase PtSe2 nanoribbons, the ferromagnetism induced by spin polarization of exposed Pt or Se atoms is decreased with the reducing nanoribbon width. For smaller nanoribbon, the magnetism can be regulated by external strain more easily. However, the magnetism cannot occur in 1 H phase PtSe2 nanoribbon. The absorption spectra are suggested to identify the nanoribbon structural changes in detail. Our results suggest the use of edge reconstruction and strain engineering in spintronics applications.

Wellhead with non-ferromagnetic materials

Energy Technology Data Exchange (ETDEWEB)

Hinson, Richard A [Houston, TX; Vinegar, Harold J [Bellaire, TX

2009-05-19

Wellheads for coupling to a heater located in a wellbore in a subsurface formation are described herein. At least one wellhead may include a heater located in a wellbore in a subsurface formation; and a wellhead coupled to the heater. The wellhead may be configured to electrically couple the heater to one or more surface electrical components. The wellhead may include at least one non-ferromagnetic material such that ferromagnetic effects are inhibited in the wellhead. Systems and methods for using such wellheads for treating a subsurface formation are described herein.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Room temperature ferromagnetism in ZnO prepared by microemulsion

Directory of Open Access Journals (Sweden)

Qingyu Xu

2011-09-01

Full Text Available Clear room temperature ferromagnetism has been observed in ZnO powders prepared by microemulsion. The O vacancy (VO clusters mediated by the VO with one electron (F center contributed to the ferromagnetism, while the isolated F centers contributed to the low temperature paramagnetism. Annealing in H2 incorporated interstitial H (Hi in ZnO, and removed the isolated F centers, leading to the suppression of the paramagnetism. The ferromagnetism has been considered to originate from the VO clusters mediated by the Hi, leading to the enhancement of the coercivity. The ferromagnetism disappeared after annealing in air due to the reduction of Hi.

Micromagnetic simulation of exchange coupled ferri-/ferromagnetic heterostructures

Energy Technology Data Exchange (ETDEWEB)

Oezelt, Harald, E-mail: harald.oezelt@fhstp.ac.at [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Kovacs, Alexander; Reichel, Franz; Fischbacher, Johann; Bance, Simon [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Gusenbauer, Markus [Center for Integrated Sensor Systems, Danube University Krems, Viktor Kaplan-Straße 2, A-2700 Wiener Neustadt (Austria); Schubert, Christian; Albrecht, Manfred [Institute of Physics, Chemnitz University of Technology, Reichenhainer Straße 70, D-09126 Chemnitz (Germany); Institute of Physics, University of Augsburg, Universitätsstraße 1, D-86159 Augsburg (Germany); Schrefl, Thomas [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Center for Integrated Sensor Systems, Danube University Krems, Viktor Kaplan-Straße 2, A-2700 Wiener Neustadt (Austria)

2015-05-01

Exchange coupled ferri-/ferromagnetic heterostructures are a possible material composition for future magnetic storage and sensor applications. In order to understand the driving mechanisms in the demagnetization process, we perform micromagnetic simulations by employing the Landau–Lifshitz–Gilbert equation. The magnetization reversal is dominated by pinning events within the amorphous ferrimagnetic layer and at the interface between the ferrimagnetic and the ferromagnetic layer. The shape of the computed magnetization reversal loop corresponds well with experimental data, if a spatial variation of the exchange coupling across the ferri-/ferromagnetic interface is assumed. - Highlights: • We present a model for exchange coupled ferri-/ferromagnetic heterostructures. • We incorporate the microstructural features of the amorphous ferrimagnet. • A distribution of interface exchange coupling is assumed to fit experimental data. • The reversal is dominated by pinning within the ferrimagnet and at the interface.

Onset of itinerant ferromagnetism associated with semiconductor ...

Indian Academy of Sciences (India)

In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

Science.gov (United States)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ravikumar, Patta; Kisan, Bhagaban; Perumal, A., E-mail: perumal@iitg.ernet.in [Department of Physics, Indian institute of Technology Guwahati, Guwahati 781 039 (India)

2015-08-15

We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO) band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μ{sub B}/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (T{sub C}) around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR) studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high T{sub C} and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

Enhanced room temperature ferromagnetism in antiferromagnetic NiO nanoparticles

Directory of Open Access Journals (Sweden)

Patta Ravikumar

2015-08-01

Full Text Available We report systematic investigations of structural, vibrational, resonance and magnetic properties of nanoscale NiO powders prepared by ball milling process under different milling speeds for 30 hours of milling. Structural properties revealed that both pure NiO and as-milled NiO powders exhibit face centered cubic structure, but average crystallite size decreases to around 11 nm along with significant increase in strain with increasing milling speed. Vibrational properties show the enhancement in the intensity of one-phonon longitudinal optical (LO band and disappearance of two-magnon band due to size reduction. In addition, two-phonon LO band exhibits red shift due to size-induced phonon confinement effect and surface relaxation. Pure NiO powder exhibit antiferromagnetic nature, which transforms into induced ferromagnetic after size reduction. The average magnetization at room temperature increases with decreasing the crystallite size and a maximum moment of 0.016 μB/f.u. at 12 kOe applied field and coercivity of 170 Oe were obtained for 30 hours milled NiO powders at 600 rotation per minute milling speed. The change in the magnetic properties is also supported by the vibrational properties. Thermomagnetization measurements at high temperature reveal a well-defined magnetic phase transition at high temperature (TC around 780 K due to induced ferromagnetic phase. Electron paramagnetic resonance (EPR studies reveal a good agreement between the EPR results and magnetic properties. The observed results are described on the basis of crystallite size variation, defect density, large strain, oxidation/reduction of Ni and interaction between uncompensated surfaces and particle core with lattice expansion. The obtained results suggest that nanoscale NiO powders with high TC and moderate magnetic moment at room temperature with cubic structure would be useful to expedite for spintronic devices.

Superconductivity near ferromagnetism in MgCNi3

International Nuclear Information System (INIS)

Rosner, H.; Weht, R.; Johannes, M.; Pickett, W.E.; Tosatti, E.

2001-06-01

Superconductivity and ferromagnetism have been believed to be incompatible over any extended temperature range until certain specific examples - RuSr 2 GdCu 2 O 8 and UGe 2 - have arisen in the past 2-3 years. The discovery of superconductivity above 8 K in MgCNi 3 , which is primarily the ferromagnetic element Ni and is strongly exchange-enhanced, provides a probable new and different example. This compound is shown here to be near ferromagnetism, requiring only hole-doping by 12% substitution of Mg by Na or Li. This system will provide the means to probe coupling, and possible coexistence, of these two forms of collective behavior without the requirement of pressure. (author)

Studying the superconductor-ferromagnet proximity effect with polarised neutron reflectometry

Science.gov (United States)

Satchell, Nathan; Cooper, Joshaniel; Kinane, Christy; Witt, James; Burnell, Gavin; Langridge, Sean

At the interface between a superconductor (S) and ferromagnet (F), an inhomogeneity can convert singlet Cooper pairs into the (spin aligned) long ranged triplet component (LRTC). The manipulation of the LRTC forms the basis of the emerging field of super-spintronics. Several theoretical works predict modification to the local magnetic state inside the S layer with the inclusion of triplet Cooper pairs, however there are now several experimental observations which disagree on both the magnitude and direction of this induced moment (see for example and). Here we report on measurements of the proximity effect using polarised neutron reflectometry, a technique sensitive to changes in the total magnetisation of a S-F heterostructure. Our results suggest that a `smoking gun' direct signature of the LRTC is below the sensitivity of our technique, we are able to study the inverse effect namely a modification to the ferromagnetism by proximity to singlet superconductivity. These observations are supported by XMCD measurements showing changes to the Fe and Co below the S layer Tc.

Positron annihilation studies of vacancy-type defects and room temperature ferromagnetism in chemically synthesized Li-doped ZnO nanocrystals

International Nuclear Information System (INIS)

Ghosh, S.; Khan, Gobinda Gopal; Mandal, K.; Thapa, Samudrajit; Nambissan, P.M.G.

2014-01-01

Highlights: • Evidence of zinc vacancy-induced intrinsic ferromagnetism in Li-doped ZnO. • Modification of defects and properties through alkali metal substitution. • Study of defect-modification using positron annihilation spectroscopy. • New way to prepare ZnO-based magnetic semiconductor for spintronic applications. -- Abstract: In this article, we have investigated the effects of Li incorporation on the lattice defects and room-temperature d 0 ferromagnetic behaviour in ZnO nanocrystals by correlating X-ray photoelectron, photoluminescence and positron annihilation spectroscopic study in details. It is found that at low doping level ( 1+ is an effective substituent of Zn site, but it prefers to occupy the interstitial positions when Li-doping exceeds 7 at.% resulting in lattice expansion and increase of particle sizes. The pristine ZnO nanocrystals exhibit ferromagnetic behaviour which is further enhanced significantly after few percentage of Li-doping in ZnO. The magnitude of both saturation magnetizations (M S ) as well as the Curie temperature (T C ) are found to increase considerably up to Li concentration of 10 at.% and then started to decrease on further Li-doping. The gradual enhancement of Zn vacancy (V Zn ) defects in ZnO nanocrystals due to Li substitution as confirmed from photoluminescence and positron annihilation spectroscopy measurements might be responsible to induce paramagnetic moments within ZnO host. The ferromagnetic exchange interaction between the localised moments of V Zn defects can be mediated though the holes arising due to Li-substitutional (Li Zn ) acceptor defects within ZnO. Hence, Li doping in ZnO favours in stabilizing considerable V Zn defects and thus helps to sustain long-range high-T C ferromagnetism in ZnO which can be a promising material in future spintronics

Positron annihilation studies of vacancy-type defects and room temperature ferromagnetism in chemically synthesized Li-doped ZnO nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ghosh, S., E-mail: sghoshphysics@gmail.com [S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700098 (India); Khan, Gobinda Gopal [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700098 (India); Mandal, K. [S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700098 (India); Thapa, Samudrajit; Nambissan, P.M.G. [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700098 (India); Saha Institute of Nuclear Physics, Sector 1, Block AF, Bidhannagar, Kolkata 700064 (India)

2014-03-25

Highlights: • Evidence of zinc vacancy-induced intrinsic ferromagnetism in Li-doped ZnO. • Modification of defects and properties through alkali metal substitution. • Study of defect-modification using positron annihilation spectroscopy. • New way to prepare ZnO-based magnetic semiconductor for spintronic applications. -- Abstract: In this article, we have investigated the effects of Li incorporation on the lattice defects and room-temperature d{sup 0} ferromagnetic behaviour in ZnO nanocrystals by correlating X-ray photoelectron, photoluminescence and positron annihilation spectroscopic study in details. It is found that at low doping level (<7 at.%), Li{sup 1+} is an effective substituent of Zn site, but it prefers to occupy the interstitial positions when Li-doping exceeds 7 at.% resulting in lattice expansion and increase of particle sizes. The pristine ZnO nanocrystals exhibit ferromagnetic behaviour which is further enhanced significantly after few percentage of Li-doping in ZnO. The magnitude of both saturation magnetizations (M{sub S}) as well as the Curie temperature (T{sub C}) are found to increase considerably up to Li concentration of 10 at.% and then started to decrease on further Li-doping. The gradual enhancement of Zn vacancy (V{sub Zn}) defects in ZnO nanocrystals due to Li substitution as confirmed from photoluminescence and positron annihilation spectroscopy measurements might be responsible to induce paramagnetic moments within ZnO host. The ferromagnetic exchange interaction between the localised moments of V{sub Zn} defects can be mediated though the holes arising due to Li-substitutional (Li{sub Zn}) acceptor defects within ZnO. Hence, Li doping in ZnO favours in stabilizing considerable V{sub Zn} defects and thus helps to sustain long-range high-T{sub C} ferromagnetism in ZnO which can be a promising material in future spintronics.

The ferromagnetic-spin glass transition in PdMn alloys: symmetry breaking of ferromagnetism and spin glass studied by a multicanonical method.

Science.gov (United States)

Kato, Tomohiko; Saita, Takahiro

2011-03-16

The magnetism of Pd(1-x)Mn(x) is investigated theoretically. A localized spin model for Mn spins that interact with short-range antiferromagnetic interactions and long-range ferromagnetic interactions via itinerant d electrons is set up, with no adjustable parameters. A multicanonical Monte Carlo simulation, combined with a procedure of symmetry breaking, is employed to discriminate between the ferromagnetic and spin glass orders. The transition temperature and the low-temperature phase are determined from the temperature variation of the specific heat and the probability distributions of the ferromagnetic order parameter and the spin glass order parameter at different concentrations. The calculation results reveal that only the ferromagnetic phase exists at x glass phase exists at x > 0.04, and that the two phases coexist at intermediate concentrations. This result agrees semi-quantitatively with experimental results.

The mitochondrial pyruvate carrier mediates high fat diet-induced increases in hepatic TCA cycle capacity

OpenAIRE

Rauckhorst, Adam J.; Gray, Lawrence R.; Sheldon, Ryan D.; Fu, Xiaorong; Pewa, Alvin D.; Feddersen, Charlotte R.; Dupuy, Adam J.; Gibson-Corley, Katherine N.; Cox, James E.; Burgess, Shawn C.; Taylor, Eric B.

2017-01-01

Objective: Excessive hepatic gluconeogenesis is a defining feature of type 2 diabetes (T2D). Most gluconeogenic flux is routed through mitochondria. The mitochondrial pyruvate carrier (MPC) transports pyruvate from the cytosol into the mitochondrial matrix, thereby gating pyruvate-driven gluconeogenesis. Disruption of the hepatocyte MPC attenuates hyperglycemia in mice during high fat diet (HFD)-induced obesity but exerts minimal effects on glycemia in normal chow diet (NCD)-fed conditions. T...

Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2017-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2017-11-29

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

Measurement of magnetization of Ga1−xMnxAs by ferromagnetic resonance

International Nuclear Information System (INIS)

Hagmann, J.A.; Traudt, K.; Zhou, Y.Y.; Liu, X.; Dobrowolska, M.; Furdyna, J.K.

2014-01-01

In this paper, we extend ferromagnetic resonance (FMR) studies of thin layers of the ferromagnetic semiconductor Ga 1−x Mn x As to the analysis of the integrated intensity of the resonance in order to obtain information on the total spin in the sample directly involved in ferromagnetically-ordered magnetization. A theoretical model is proposed for the dependences of the FMR integrated intensity and linewidth on the orientation of the applied magnetic field as the field direction is varied from in-plane to normal-to-the-plane of the Ga 1−x Mn x As layer. The strain-induced magnetic anisotropy of Ga 1−x Mn x As presents a significant challenge to conventional FMR linewidth and integrated intensity models. The new model predicts that the integrated FMR intensity is proportional to the saturation magnetization M S of the sample, with the constant of proportionality varying as a function of the polar and azimuthal angles of the applied magnetic field. The angular and temperature behaviors of the integrated intensity and linewidth of the FMR predicted by the proposed model are in good qualitative agreement with measurements. - Highlights: • We extend ferromagnetic resonance to the analysis of total magnetization of thin film Ga 1−x Mn x As. • We formulate a theoretical model for FMR integrated intensity and linewidth. • The model predicts that integrated FMR intensity is proportional to magnetization. • Predictions made by the model are in good qualitative agreement with measurements

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

International Nuclear Information System (INIS)

Wang, D.D.; Chen, Z.Q.; Li, C.Y.; Li, X.F.; Cao, C.Y.; Tang, Z.

2012-01-01

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

Science.gov (United States)

Wang, D. D.; Chen, Z. Q.; Li, C. Y.; Li, X. F.; Cao, C. Y.; Tang, Z.

2012-07-01

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

International Nuclear Information System (INIS)

Tong Liuniu; Wang Yichao; He Xianmei; Han Huaibin; Xia Ailin; Hu Jinlian

2012-01-01

We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr 2+ ions substituting for Zn 2+ ions without any detectable secondary phase in as-synthesized Zn 0.97 Cr 0.03 O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M s as well as an increase of coercivity of H 2 -annealed Zn 0.97 Cr 0.03 O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H o may play an important role in the origin of H 2 -annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles. - Graphical Abstract: The H 2 -annealing induced enhancement of room temperature ferromagnetism in Cr-doped ZnO nanoparticles is observed. It is found that the field-cooled M-T curves can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. The PL data show evidence that the hydrogen related shallow donor defect or/and defect complexes may be responsible for it. Display Omitted Highlights: ► The H 2 -annealing induced a large enhancement of

Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

2015-09-01

Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

Influence of Ti addition on the room temperature ferromagnetism of tin oxide (SnO{sub 2}) nanocrystal

Energy Technology Data Exchange (ETDEWEB)

Sakthiraj, K.; Balachandrakumar, K., E-mail: dkbaldr@gmail.com

2015-12-01

Nano-crystalline Sn{sub 1−x}Ti{sub x}O{sub 2} (x=0.00, 0.02, 0.05 and 0.07) particles were synthesized by the sol–gel method without any surfactant and dispersant material. The X-ray diffraction (XRD) pattern shows the formation of the tetragonal rutile phase structure for the undoped SnO{sub 2} nanoparticle and Ti doping does not alter the structure of undoped tin oxide. Due to quantum confinement effect, a larger optical band gap for as-synthesized materials was found. Vibrating sample magnetometer (VSM) result demonstrates the undoped and 2% Ti doped SnO{sub 2} samples exhibit perfect room temperature ferromagnetism (RTFM) but 5% and 7% of Ti doped samples show a weak ferromagnetism with diamagnetic contribution. The ferromagnetic property of the material was initiated with the help of oxygen vacancy. The amount of oxygen vacancy present in the samples were identified from the photoluminescence spectra and the value of oxygen vacancy decreased with increasing Ti concentration. - Highlights: • Pure Ti doped and undoped SnO{sub 2} nanocrystal were prepared using sol–gel method. • Oxygen vacancy induced RTFM was observed in SnO{sub 2} nanostructures. • Higher amount of ferromagnetism was detected in pristine SnO{sub 2} nanocrystal. • Ferromagnetic property was decreased with increasing Ti concentration. • Redshift of energy band gap was noted with increasing Ti content.

Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

International Nuclear Information System (INIS)

Zhou, Shengqiang

2015-01-01

Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

A method for measuring exchange stiffness in ferromagnetic films

International Nuclear Information System (INIS)

Girt, Erol; Huttema, W.; Montoya, E.; Kardasz, B.; Eyrich, C.; Heinrich, B.; Mryasov, O. N.; Dobin, A. Yu.; Karis, O.

2011-01-01

An exchange stiffness, A ex , in ferromagnetic films is obtained by fitting the M(H) dependence of two ferromagnetic layers antiferromagnetically coupled across a nonmagnetic spacer layer with a simple micromagnetic model. In epitaxial and textured structures this method allows measuring A ex between the crystallographic planes perpendicular to the growth direction of ferromagnetic films. Our results show that A ex between [0001] planes in textured Co grains is 1.54 ± 0.12 x 10 -11 J/m.

Magnetic properties of Fe/ZnSe and Fe/GaAs heterostructures investigated by ferromagnetic resonance and SQUID measurements

Czech Academy of Sciences Publication Activity Database

Meckenstock, R.; Spodding, D.; Himmelbauer, K.; Krenn, H.; Doi, M.; Keune, W.; Frait, Zdeněk; Pelzl, J.

2002-01-01

Roč. 240, - (2002), s. 410-413 ISSN 0304-8853 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic resonance * squid * anisotropy-growth-induced * relaxation-magnetic Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.046, year: 2002

First-principles study on ferromagnetism in double perovskite Sr2AlTaO6 doped with Cu or Zn at B sites

Science.gov (United States)

Li, Y. D.; Wang, C. C.; Guo, Y. M.; Yu, Y.; Lu, Q. L.; Huang, S. G.; Li, Q. J.; Wang, H.; Cheng, R. L.; Liu, C. S.

2018-05-01

The possibilities of ferromagnetism induced by nonmagnetic dopants (Cu, Zn) in double perovskite Sr2AlTaO6 at B sites are investigated by density functional theory. Calculations reveal that substitutions at Ta-site tend to form high spin electronic configurations and could induce ferromagnetism which can be attributed to the hole-mediated p- d hybridization between Cu (or Zn) eg states and the neighboring O 2p states. The dopants preferably substitute at Al-site and adopt low spin electronic structures. Due to the smaller hole concentration and weaker covalent intensity, Sr2AlTaO6 with dopants at Al-site exhibits p-type metallic semiconductors without spin polarization.

Mesoporous hydroxyapatite as a carrier of olanzapine for long-acting antidepression treatment in rats with induced depression.

Science.gov (United States)

Shyong, Yan-Jye; Wang, Mao-Hsien; Kuo, Li-Wei; Su, Chang-Fu; Kuo, Wei-Ting; Chang, Kuo-Chi; Lin, Feng-Huei

2017-06-10

An antidepressant carrier, mesoporous hydroxyapatite olanzapine (mesoHAP-OLZ), was designed to maintain 3weeks of constant medication release. The carrier was intramuscularly (IM) injected, where cellular activity played a role in achieving the goal of constant release. The efficiency of the treatment was evaluated from 3 perspectives in in vivo studies: locomotor activities, biomarkers, and learning and memory ability. MesoHAP-OLZ can increase the locomotor activity in rats with induced depression determined by open field test (OFT) and forced swim test (FST). Serotonin (5-HT), one of the most important biomarker in depression can also be increased by mesoHAP-OLZ, leading to increased hippocampus activity as measured by functional magnetic resonance imaging (fMRI). MesoHAP-OLZ can also improve learning and memory ability in rats with induced depression during Morris water maze (MWM) test. Our findings further show that mesoHAP-OLZ can provide long-term drug release with a single IM injection, helping to solve the problem of non-adherent medication intake that often occurs in antidepressant therapy. Copyright © 2017 Elsevier B.V. All rights reserved.

Room temperature ferromagnetism in Fe-doped CuO nanoparticles.

Science.gov (United States)

Layek, Samar; Verma, H C

2013-03-01

The pure and Fe-doped CuO nanoparticles of the series Cu(1-x)Fe(x)O (x = 0.00, 0.02, 0.04, 0.06 and 0.08) were successfully prepared by a simple low temperature sol-gel method using metal nitrates and citric acid. Rietveld refinement of the X-ray diffraction data showed that all the samples were single phase crystallized in monoclinic structure of space group C2/c with average crystallite size of about 25 nm and unit cell volume decreases with increasing iron doping concentration. TEM micrograph showed nearly spherical shaped agglomerated particles of 4% Fe-doped CuO with average diameter 26 nm. Pure CuO showed weak ferromagnetic behavior at room temperature with coercive field of 67 Oe. The ferromagnetic properties were greatly enhanced with Fe-doping in the CuO matrix. All the doped samples showed ferromagnetism at room temperature with a noticeable coercive field. Saturation magnetization increases with increasing Fe-doping, becomes highest for 4% doping then decreases for further doping which confirms that the ferromagnetism in these nanoparticles are intrinsic and are not resulting from any impurity phases. The ZFC and FC branches of the temperature dependent magnetization (measured in the range of 10-350 K by SQUID magnetometer) look like typical ferromagnetic nanoparticles and indicates that the ferromagnetic Curie temperature is above 350 K.

Magnon-photon interaction in ferromagnets

International Nuclear Information System (INIS)

Shrivastava, K.N.

1980-01-01

A magnon-photon interaction for the magnetic vector of the electromagnetic wave perpendicular to the direction of magnetization in a ferromagnet is constructed with the use of Bogoliubov transformation. The resulting magnon-photon interaction is found to contain several interesting new radiation effects. The self-energy of the magnon is calculated and life times arising from the radiation scattering are predicted. The magnon frequency shift due to the radiation field is found. One of the terms arising from the one-magnon one-photon scattering gives a line width that is in reasonable agreement with the experimentally measured value of ferromagnetic resonance line width in yttrium iron garnet. (orig.)

Magnetic Circular X-ray Dichroism Study of Paramagnetic and Anti-Ferromagnetic States in SrFeO3 Using a 10-T Superconducting Magnet

International Nuclear Information System (INIS)

Okamoto, J.; Mamiya, K.; Fujimori, S.-I.; Okane, T.; Saitoh, Y.; Muramatsu, Y.; Fujimori, A.; Ishiwata, S.; Takano, M.

2004-01-01

Magnetic circular x-ray dichroism (MCXD) measurements in Fe 2p absorption have been done on SrFeO3, which shows a spiral anti-ferromagnetism, by using a 10-T superconducting magnet. Finite MCXD structures have been observed under magnetic field of 8 T even in the paramagnetic and anti-ferromagnetic states. The intensity of the MCXD structure at hv ∼ 710 eV increases linearly as magnetic field increases linearly and the total magnetic moments estimated by MCXD sum rules roughly corresponds to the magnetization measured by SQUID measurements. MCXD study of paramagnetic and/or anti-ferromagnetic samples can be done by using a superconducting magnet that generates a strong magnetic field enough to induce finite magnetization

Itinerant Ferromagnetism in Ultracold Fermi Gases

DEFF Research Database (Denmark)

Heiselberg, Henning

2012-01-01

Itinerant ferromagnetism in cold Fermi gases with repulsive interactions is studied applying the Jastrow-Slater approximation generalized to finite polarization and temperature. For two components at zero temperature a second order transition is found at akF ≃ 0.90 compatible with QMC. Thermodyna......Itinerant ferromagnetism in cold Fermi gases with repulsive interactions is studied applying the Jastrow-Slater approximation generalized to finite polarization and temperature. For two components at zero temperature a second order transition is found at akF ≃ 0.90 compatible with QMC...

Dominant role of many-body effects on the carrier distribution function of quantum dot lasers

Science.gov (United States)

Peyvast, Negin; Zhou, Kejia; Hogg, Richard A.; Childs, David T. D.

2016-03-01

The effects of free-carrier-induced shift and broadening on the carrier distribution function are studied considering different extreme cases for carrier statistics (Fermi-Dirac and random carrier distributions) as well as quantum dot (QD) ensemble inhomogeneity and state separation using a Monte Carlo model. Using this model, we show that the dominant factor determining the carrier distribution function is the free carrier effects and not the choice of carrier statistics. By using empirical values of the free-carrier-induced shift and broadening, good agreement is obtained with experimental data of QD materials obtained under electrical injection for both extreme cases of carrier statistics.

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Wang, D.D. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Chen, Z.Q., E-mail: chenzq@whu.edu.cn [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Li, C.Y.; Li, X.F. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Cao, C.Y.; Tang, Z. [Department of Electronic and Engineering, East China Normal University, Shanghai 200241 (China)

2012-07-15

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 Degree-Sign C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 Degree-Sign C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 Degree-Sign C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 Degree-Sign C. However, after 1400 Degree-Sign C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

Thermoelectric Phenomena in a Quantum Dot Attached to Ferromagnetic Leads in Kondo Regime

International Nuclear Information System (INIS)

Chen Qiao; Zhao Li-Li

2014-01-01

We have studied the thermoelectric properties through ferromagnetic leads-QD coupled system (F-QD-F) in the Kondo regime by nonequilibrium Green's functions method. The spin-flip effect induced by ferromagnetic leads and Kondo effect influence the thermoelectric properties significantly. The peak-valley structure emerges at the low temperature due to Kondo resonance, and the peak-valley structure also relies on the polarization angle θ, the spin-dependent linewidth function Γ γσ and the energy level of QD ∈ d . Novel resonant peak also emerges in the curve of ZT c versus polarization angle θ. The Kondo effect suppresses the figure of merit ZT c and the spin-dependent figure of merit ZT s . In addition, the spin-dependent figure of merit ZT s is relate with the gap between Γ γ↑ and Γ γ↓ . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Test of the fast thin-film ferromagnetic shutters for ultracold neutrons

International Nuclear Information System (INIS)

Pokotilovskij, Yu.N.; Novopol'tsev, M.I.; Geltenbort, P.

2008-01-01

Test of thin-film ferromagnetic shutters of two types for ultracold neutrons has been performed. The first type is based on neutron reflection from the sequence of successively placed thin ferromagnetic layers with oppositely directed magnetization. The second one is based on neutron refraction in ferromagnetic foils inserted in the beam

Hot-carrier effects on irradiated deep submicron NMOSFET

International Nuclear Information System (INIS)

Cui Jiangwei; Zheng Qiwen; Yu Xuefeng; Cong Zhongchao; Zhou Hang; Guo Qi; Wen Lin; Wei Ying; Ren Diyuan

2014-01-01

We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress. (semiconductor devices)

Spin-lattice dynamics simulation of external field effect on magnetic order of ferromagnetic iron

Directory of Open Access Journals (Sweden)

C. P. Chui

2014-03-01

Full Text Available Modeling of field-induced magnetization in ferromagnetic materials has been an active topic in the last dozen years, yet a dynamic treatment of distance-dependent exchange integral has been lacking. In view of that, we employ spin-lattice dynamics (SLD simulations to study the external field effect on magnetic order of ferromagnetic iron. Our results show that an external field can increase the inflection point of the temperature. Also the model provides a better description of the effect of spin correlation in response to an external field than the mean-field theory. An external field has a more prominent effect on the long range magnetic order than on the short range counterpart. Furthermore, an external field allows the magnon dispersion curves and the uniform precession modes to exhibit magnetic order variation from their temperature dependence.

Emergent ferromagnetism in ZnO/Al2O3 core-shell nanowires: Towards oxide spinterfaces

KAUST Repository

Xing, G. Z.; Wang, D. D.; Cheng, C.-J.; He, M.; Li, S.; Wu, Tao

2013-01-01

We report that room-temperature ferromagnetism emerges at the interface formed between ZnO nanowire core and Al2O3 shell although both constituents show mainly diamagnetism. The interface-based ferromagnetism can be further enhanced by annealing the ZnO/Al2O3 core-shell nanowires and activating the formation of ZnAl2O4 phase as a result of interfacial solid-state reaction. High-temperature measurements indicate that the magnetic order is thermally stable up to 750 K. Transmission electron microscopy studies reveal the annealing-induced jagged interfaces, and the extensive structural defects appear to be relevant to the emergent magnetism. Our study suggests that tailoring the spinterfaces in nanostructure-harnessed wide-band-gap oxides is an effective route towards engineered nanoscale architecture with enhanced magnetic properties.

Emergent ferromagnetism in ZnO/Al2O3 core-shell nanowires: Towards oxide spinterfaces

KAUST Repository

Xing, G. Z.

2013-07-08

We report that room-temperature ferromagnetism emerges at the interface formed between ZnO nanowire core and Al2O3 shell although both constituents show mainly diamagnetism. The interface-based ferromagnetism can be further enhanced by annealing the ZnO/Al2O3 core-shell nanowires and activating the formation of ZnAl2O4 phase as a result of interfacial solid-state reaction. High-temperature measurements indicate that the magnetic order is thermally stable up to 750 K. Transmission electron microscopy studies reveal the annealing-induced jagged interfaces, and the extensive structural defects appear to be relevant to the emergent magnetism. Our study suggests that tailoring the spinterfaces in nanostructure-harnessed wide-band-gap oxides is an effective route towards engineered nanoscale architecture with enhanced magnetic properties.

Investigation of a Mesoporous Silicon Based Ferromagnetic Nanocomposite

Directory of Open Access Journals (Sweden)

Roca AG

2009-01-01

Full Text Available Abstract A semiconductor/metal nanocomposite is composed of a porosified silicon wafer and embedded ferromagnetic nanostructures. The obtained hybrid system possesses the electronic properties of silicon together with the magnetic properties of the incorporated ferromagnetic metal. On the one hand, a transition metal is electrochemically deposited from a metal salt solution into the nanostructured silicon skeleton, on the other hand magnetic particles of a few nanometres in size, fabricated in solution, are incorporated by immersion. The electrochemically deposited nanostructures can be tuned in size, shape and their spatial distribution by the process parameters, and thus specimens with desired ferromagnetic properties can be fabricated. Using magnetite nanoparticles for infiltration into porous silicon is of interest not only because of the magnetic properties of the composite material due to the possible modification of the ferromagnetic/superparamagnetic transition but also because of the biocompatibility of the system caused by the low toxicity of both materials. Thus, it is a promising candidate for biomedical applications as drug delivery or biomedical targeting.

Heat Transport in Graphene Ferromagnet-Insulator-Superconductor Junctions

Institute of Scientific and Technical Information of China (English)

LI Xiao-Wei

2011-01-01

We study heat transport in a graphene ferromagnet-insulator-superconducting junction. It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor (FIS) junction is an oscillatory function of the barrier strength x in the thin-barrier limit. The gate potential U0 decreases the amplitude of thermal conductance oscillation. Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh. The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.%@@ We study heat transport in a graphene ferromagnet-insulator-superconducting junction.It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor(FIS)junction is an oscillatory function of the barrier strength X in the thin-barrier limit.The gate potential Uo decreases the amplitude of thermal conductance oscillation.Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh.The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.

Polarized-photon frequency filter in double-ferromagnetic barrier silicene junction

Energy Technology Data Exchange (ETDEWEB)

Chantngarm, Peerasak; Yamada, Kou [Domain of Mechanical Science and Technology, Graduate School of Science and Technology, Gunma University, Gunma (Japan); Soodchomshom, Bumned, E-mail: Bumned@hotmail.com [Department of Physics, Faculty of Science, Kasetsart University Bangkok 10900 (Thailand)

2017-05-01

We present an analytical study of effects from circularly polarized light illumination on controlling spin-valley currents in a dual ferromagnetic-gated silicene. Two different perpendicular electric fields are applied into the ferromagnetic (FM) gates and the photo-irradiated normal (NM) area between the gates. One parallel (P) and two anti-parallel (AP) configurations of exchange fields applied along with chemical potential to the gates are used in this investigation. Interestingly, the studied junction might give rise to polarized-photon frequency filter. Spin-valley filtering can be achieved at the off-resonant frequency region with appropriate direction of electric fields and the configuration of exchange fields (AP-1 or AP-2). Under the photo irradiation, this study found that tunneling magnetoresistance (TMR) is controllable to achieve giant magnetoresistance (GMR) by adjusting electric fields or chemical potentials. Our study suggests the potential of photo-sensing devices in spin-valleytronics realm. - Highlights: • Photon-frequency control of spin-valley currents in silicene is investigated. • Complete photon frequency filtering effect is predicted. • Giant magnetoresistance induced by polarized photon is also found. • The junction is applicable for photo-sensing devices in spin-valleytronics realm.

STM observations of ferromagnetic clusters

International Nuclear Information System (INIS)

Wawro, A.; Kasuya, A.

1998-01-01

Co, Fe and Ni clusters of nanometer size, deposited on silicon and graphite (highly oriented pyrolytic graphite), were observed by a scanning tunneling microscope. Deposition as well as the scanning tunneling microscope measurements were carried out in an ultrahigh vacuum system at room temperature. Detailed analysis of Co cluster height was done with the scanning tunneling microscope equipped with a ferromagnetic tip in a magnetic field up to 70 Oe. It is found that bigger clusters (few nanometers in height) exhibit a dependence of their apparent height on applied magnetic field. We propose that such behaviour originates from the ferromagnetic ordering of cluster and associate this effect to spin polarized tunneling. (author)

Evaluation of stress-induced martensite phase in ferromagnetic shape memory alloy Fe-30.2at%Pd by non-destructive Barkhausen noise

Science.gov (United States)

Furuya, Yasubumi; Okazaki, Teiko; Ueno, Takasi; Spearing, Mark; Wutting, Manfred

2005-05-01

Barkhausen noise (BHN) method seems a useful tecnique to non-destructive evaluation of martensite phase transformation of ferromagnetic shape memory alloy, which is used as the filler of our proposing "Smart Composite Board". The concept of design for "Smart Composite Board" which can combine the non-destructive magnetic inspection and shape recovery function in the material itself was formerly proposed. In the present study, we survey the possibility of Barkhausen noise (BHN) method to detect the transformation of microscopic martensite phase caused by stress-loading in Fe-30.2at%Pd thin foil, which has a stable austenite phase (fcc structure) at room temperature. The BHN voltage was measured at loading stress up to 100 MPa in temperature range of 300K to 373K. Stress-induced martensite twin was observed by laser microscope above loading stress of 25 MPa. A phase transformation caused by loading stress were analyzed also by X-ray diffraction. The signals of BHN are analyzed by the time of magnetization and the noise frequency. BHN caused by grain boundaries appears in the lower frequency range (1kHz-3kHz) and BHN by martensite twin in the higher frequency range (8kHz-10kHz). The envelope of the BHN voltage as a function of time of magnetization shows a peak due to austenite phase at weak magnetic field. The BHN envelope due to martensite twins creates additional two peaks at intermediate magnetic field. BHN method turns out to be a powerful technique for non-destructive evaluation of the phase transformation of ferromagnetic shape memory alloy.

Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As

Science.gov (United States)

Souma, S.; Chen, L.; Oszwałdowski, R.; Sato, T.; Matsukura, F.; Dietl, T.; Ohno, H.; Takahashi, T.

2016-01-01

Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry. PMID:27265402

Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.

Science.gov (United States)

Souma, S; Chen, L; Oszwałdowski, R; Sato, T; Matsukura, F; Dietl, T; Ohno, H; Takahashi, T

2016-06-06

Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry.

Anomalous Hall effect scaling in ferromagnetic thin films

KAUST Repository

Grigoryan, Vahram L.

2017-10-23

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Anomalous Hall effect scaling in ferromagnetic thin films

KAUST Repository

Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

2017-01-01

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Suppression of the ferromagnetic state by disorder in the Kondo lattice

International Nuclear Information System (INIS)

Crisan, M.; Popoviciu, C.

1992-01-01

This paper reports that ferromagnetic ground state of a Kondo lattice with a low concentration of conduction electrons is ferromagnetic. Assuming the existence of disorder in the Fermi liquid of the conduction electrons the authors show that the ferromagnetic state can be suppressed by the effect of the spin fluctuations of the disordered Fermi liquid

Quantitative measurement of Au and Fe in ferromagnetic nanoparticles with Laser Induced Breakdown Spectroscopy using a polymer-based gel matrix

International Nuclear Information System (INIS)

Borowik, T.; Przybyło, M.; Pala, K.; Otlewski, J.; Langner, M.

2011-01-01

The medical applications of nanomaterials require substantial changes in the research and development stage, such as the introduction of new processes and methods, and adequate modifications of the national and international laws on the medical product registration. To accomplish this, proper parameterizations of nano-scaled products need to be developed and implemented, accompanied by suitable measuring methods. The introduction of metallic particles to medical practices requires the precise, quantitative evaluation of the production process and later quantification and characterization of the nanoparticles in biological matrices for the bioavailability and biodistribution evaluation. In order to address these issues we propose a method for the quantitative analysis of the metallic nanoparticles composition by Laser Induced Breakdown Spectroscopy (LIBS). Au/Fe ferro-magnetic nanoparticles were used to evaluate the method applicability. Since the powder form of nanoparticles spatters upon laser ablation, first we had to develop fast, convenient and quantitative method for the nano-powdered sample preparation. The proposed method is based on the polymer gelation of nanopowders or their water suspensions. It has been shown that nanopowders compositional changes throughout the production process, along with their final characterization, can be reliable performed with LIBS technique. The quantitative values obtained were successfully correlated with those derived with ICP technique. - Highlights: ► The atomic composition of nanoparticles was analyzed with LIBS. ► The amount of gold on ferromagnetic particles was quantified by the method. ► Gel fixation was used as new way of handling powdered samples. ► LIBS results are comparable with other equivalent methods (ICP). ► There was a difference between measured and assumed nanoparticle composition.

Field-induced quantum criticality of a spin-1/2 planar ferromagnet

International Nuclear Information System (INIS)

Mercaldo, M T; Rabuffo, I; Cesare, L De; D'Auria, A Caramico

2009-01-01

The low-temperature critical properties and crossovers of a spin- 1/2 planar ferromagnet in a longitudinal magnetic field are explored in terms of an anisotropic bosonic action, suitable to describe the spin model in the low-temperature regime. This is performed adopting a procedure which combines an averaging over dynamic degrees of freedom and the classical Wilson renormalization group transformation. Within this framework we get the phase boundary, ending in a quantum critical point, and general expressions for the correlation length and susceptibility as functions of the temperature and the applied magnetic field within the disordered phase. In particular, two crossovers occur decreasing the temperature with the magnetic field fixed at its quantum critical point value, which might be actually observable in complex magnetic compounds, as suggested by recent experiments.

Magnetization reversal in ferromagnetic spirals via domain wall motion

Science.gov (United States)

Schumm, Ryan D.; Kunz, Andrew

2016-11-01

Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a ferromagnetic spiral nanowire. The spiral geometry is capable of taking advantage of the benefits of both straight and circular wires. Measurements of the in-plane components of the spirals' magnetization can be used to determine the angular location of the domain wall, impacting the magnetoresistive applications dependent on the domain wall location. The spirals' magnetization components are found to depend on the spiral parameters: the initial radius and spacing between spiral arms, along with the domain wall location. The magnetization is independent of the parameters of the rotating field used to move the domain wall, and therefore the model is valid for current induced domain wall motion as well. The speed of the domain wall is found to depend on the frequency of the rotating driving field, and the domain wall speeds can be reliably varied over several orders of magnitude. We further demonstrate a technique capable of injecting multiple domain walls and show the reliable and unidirectional motion of domain walls through the arms of the spiral.

Pressure-induced suppression of ferromagnetic phase and conduction in CaMn1-xRuxO3

International Nuclear Information System (INIS)

Markovich, V.; Fita, I.; Puzniak, R.; Rozenberg, E.; Martin, C.; Wisniewski, A.; Maignan, A.; Raveau, B.; Yuzhelevskii, Y.; Gorodetsky, G.

2005-01-01

Magnetic and transport properties of polycrystalline CaMn 1-x Ru x O 3 (x=0-0.4) perovskites were investigated under pressures up to 12kbar. It was found that an applied pressure suppresses ferromagnetism and increases resistivity. The results are discussed in the context of phase separation and valence effects

Structural, optical, Induced ferromagnetism and anti-ferromagnetism in SnO2 nanoparticles by varying cobalt concentration

International Nuclear Information System (INIS)

Ali, Atif; Sarfraz, A.K.; Ali, Kashif; Mumtaz, A.

2015-01-01

The SnO 2 nanoparticles were prepared with different cobalt concentrations (0.0%, 0.5%, 1%, 3% and 4%) by chemical co-precipitation method. The NH 4 OH was used as precipitating agent; the pH value, reaction time and reaction temperature were optimized during synthesis. The x-ray diffraction (XRD) pattern reveals the formation of single phase tetragonal structure of undoped and cobalt doped SnO 2 nanoparticles which lies in the range of 19–22 nm calculated by De-Bye Scherrer's formula. The optical properties were studied by measuring the reflectance spectroscopy which shows that band gap energy decreases with increase in cobalt concentration. The magnetic characterization was performed by Quantum Design Physical property measurement system (PPMS). Interestingly magnetic measurements show that ferromagnetism in a Co doped SnO 2 becomes visible for x=0.5% and diminishes with further increasing of cobalt concentration. - Highlights: • SnO 2 nanoparticles were prepared with different cobalt concentrations (0.0 % 0.5%, 1%, 3% and 4%) by the chemical co-precipitation method. • Structure was confirmed through x-ray diffraction (XRD) analysis. • The optical properties were studied by measuring the reflectance spectroscopy. • The magnetic characterization was performed

Defect evolution and its impact on the ferromagnetism of Cu-doped ZnO nanocrystals upon thermal treatment: A positron annihilation study

Science.gov (United States)

Chen, Zhi-Yuan; Chen, Yuqian; Zhang, Q. K.; Qi, N.; Chen, Z. Q.; Wang, S. J.; Li, P. H.; Mascher, P.

2017-01-01

CuO/ZnO nanocomposites with 4 at. % CuO were annealed in air at various temperatures between 100 and 1200 °C to produce Cu-doped ZnO nanocrystals. X-ray diffraction shows that a CuO phase can be observed in the CuO/ZnO nanocomposites annealed at different temperatures, and the Cu-doped ZnO nanocrystals are identified to be of wurtzite structure. The main peak (101) appears at slightly lower diffraction angles with increasing annealing temperature from 400 up to 1200 °C, which confirms the successful doping of Cu into the ZnO lattice above 400 °C. Scanning electron microscopy indicates that most particles in the CuO/ZnO nanocomposites are isolated when annealing at 100-400 °C, but these particles have a tendency to form clusters or aggregates as the annealing temperature increases from 700 to 1000 °C. Positron annihilation measurements reveal a large number of vacancy defects in the interface region of the nanocomposites, and they are gradually recovered with increasing annealing temperature up to 1000 °C. Room-temperature ferromagnetism can be observed in the CuO/ZnO nanocomposites, and the magnetization decreases continuously with increasing annealing temperature. However, there may be several different origins of ferromagnetism in the CuO/ZnO nanocomposites. At low annealing temperatures, the ferromagnetism originates from the CuO nanograins, and the ferromagnetism of CuO nanograins decreases with an increase in the grain size after subsequent higher temperature annealing, which leads to the weakening of ferromagnetism in the CuO/ZnO nanocomposites. After annealing from 400 to 1000 °C, the ferromagnetism gradually vanishes. The ferromagnetism is probably induced by Cu substitution but is mediated by vacancy defects in the CuO/ZnO nanocomposites. The disappearance of ferromagnetism coincides well with the recovery of vacancy defects. It can be inferred that the ferromagnetism is mediated by vacancy defects that are distributed in the interface region.

Designing a New Ni-Mn-Sn Ferromagnetic Shape Memory Alloy with Excellent Performance by Cu Addition

Directory of Open Access Journals (Sweden)

Kun Zhang

2018-02-01

Full Text Available Both magnetic-field-induced reverse martensitic transformation (MFIRMT and a high working temperature are crucial for the application of Ni-Mn-Sn magnetic shape memory alloys. Here, by first-principles calculations, we demonstrate that the substitution of Cu for Sn is effective not only in enhancing the MFIRMT but also in increasing martensitic transformation, which is advantageous for its application. Large magnetization difference (ΔM in Ni-Mn-Sn alloy is achieved by Cu doping, which arises from the enhancement of magnetization of austenite due to the change of Mn-Mn interaction from anti-ferromagnetism to ferromagnetism. This directly leads to the enhancement of MFIRMT. Meanwhile, the martensitic transformation shifts to higher temperature, owing to the energy difference between the austenite L21 structure and the tetragonal martensite L10 structure increases by Cu doping. The results provide the theoretical data and the direction for developing a high temperature magnetic-field-induced shape memory alloy with large ΔM in the Ni-Mn-Sn Heusler alloy system.

Effect of Co and O defects on ferromagnetism in Co-doped ZnO: An X-ray absorption spectroscopic investigation

Science.gov (United States)

Singhal, Rishi K.; Jakhar, Narendra; Samariya, A.; Dolia, S. N.; Kumar, Sudhish

2018-02-01

Understanding of origin of ferromagnetism in dilute magnetic oxides (DMO's) has become one of the most challenging research problems in condensed matter physics. Here we are reporting a detailed study of magnetic properties and electronic structure of two 5% Co-doped ZnO samples (the as-prepared sample Zn0.95Co0.05O and the hydrogenated sample Zn0.95Co0.05O:H). The as-prepared sample is found to be paramagnetic while through hydrogenation, we observed inducement of remarkable ferromagnetism in it. The H-mediated magnetic transition is accompanied by electronic structure modifications with no structural deviations. To get in-depth information into electronic structure correlations of the observed ferromagnetism, we have investigated their electronic properties in detail. For this purpose, we have employed the site-selective and element-sensitive X-ray-absorption spectroscopy (XAS) in the vicinity of the Cobalt L2,3 edge, the oxygen K edge, and the Zinc L3 edge using synchrotron radiation. The Co L2,3 edge spectra clearly show that Co dopants reside at the Zn sites for both these samples and that they are tetrahedrally coordinated with the ligand O atoms. Very minor changes are observed in the Zn L3 edge spectra. However, the O 1s edge spectra display dominant additional components in the ferromagnetic hydrogenated sample Zn0.95Co0.05O:H, not observed in the as-prepared non-magnetic sample Zn0.95Co0.05O. We conclude that the observed spectral features can be attributed to the presence of O vacancies and the hybridization of Co 3d states with O 2p vacancy states. These two factors together are likely to play important role in inducement of ferromagnetic ordering in this Co-doped ZnO system. However, which of these two weighs more in this mechanism, cannot be pinpointed and more studies are required in this regard.

Carrier concentration effects on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.; Uemura, C.

1984-01-01

Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

Effect of shear stress on electromagnetic behaviors in superconductor-ferromagnetic bilayer structure

Science.gov (United States)

Yong, Huadong; Zhao, Meng; Jing, Ze; Zhou, Youhe

2014-09-01

In this paper, the electromagnetic response and shielding behaviour of superconductor-ferromagnetic bilayer structure are studied. The magnetomechanical coupling in ferromagnetic materials is also considered. Based on the linear piezomagnetic coupling model and anti-plane shear deformation, the current density and magnetic field in superconducting strip are obtained firstly. The effect of shear stress on the magnetization of strip is discussed. Then, we consider the magnetic cloak for superconductor-ferromagnetic bilayer structure. The magnetic permeability of ferromagnetic material is obtained for perfect cloaking in uniform magnetic field with magnetomechanical coupling in ferromagnet. The simulation results show that the electromagnetic response in superconductors will change by applying the stress only to the ferromagnetic material. In addition, the performance of invisibility of structure for non-uniform field will be affected by mechanical stress. It may provide a method to achieve tunability of superconducting properties with mechanical loadings.

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Science.gov (United States)

MacNeill, D.; Stiehl, G. M.; Guimaraes, M. H. D.; Buhrman, R. A.; Park, J.; Ralph, D. C.

2017-03-01

Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation--the component of torque that can compensate magnetic damping is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidamping switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin-source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidamping torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling spin-orbit torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.

Ferromagnetism in proton irradiated 4H-SiC single crystal

Directory of Open Access Journals (Sweden)

Ren-Wei Zhou

2015-04-01

Full Text Available Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Optimization of a superconducting linear levitation system using a soft ferromagnet

International Nuclear Information System (INIS)

Agramunt-Puig, Sebastia; Del-Valle, Nuria; Navau, Carles; Sanchez, Alvaro

2013-01-01

Highlights: ► Study of the levitation of a superconducting bar over different magnetic guideways. ► A soft ferromagnet within permanent magnets improves levitation stability. ► We study the best geometry for large levitation force with full stability. -- Abstract: The use of guideways that combine permanent magnets and soft ferromagnetic materials is a common practice in magnetic levitation transport systems (maglevs) with bulk high-temperature superconductors. Theoretical tools to simulate in a realistic way both the behavior of all elements (permanent magnets, soft ferromagnet and superconductor) and their mutual effects are helpful to optimize the designs of real systems. Here we present a systematic study of the levitation of a maglev with translational symmetry consisting of a superconducting bar and a guideway with two identic permanent magnets and a soft ferromagnetic material between them. The system is simulated with a numerical model based on the energy minimization method that allows to analyze the mutual interaction of the superconductor, assumed to be in the critical state, and a soft ferromagnet with infinite susceptibility. Results indicate that introducing a soft ferromagnet within the permanent magnets not only increases the levitation force but also improves the stability. Besides, an estimation of the relative sizes and shapes of the soft ferromagnet, permanent magnets and the superconductor in order to obtain large levitation force with full stability is provided

Optimization of a superconducting linear levitation system using a soft ferromagnet

Energy Technology Data Exchange (ETDEWEB)

Agramunt-Puig, Sebastia; Del-Valle, Nuria; Navau, Carles, E-mail: carles.navau@uab.cat; Sanchez, Alvaro

2013-04-15

Highlights: ► Study of the levitation of a superconducting bar over different magnetic guideways. ► A soft ferromagnet within permanent magnets improves levitation stability. ► We study the best geometry for large levitation force with full stability. -- Abstract: The use of guideways that combine permanent magnets and soft ferromagnetic materials is a common practice in magnetic levitation transport systems (maglevs) with bulk high-temperature superconductors. Theoretical tools to simulate in a realistic way both the behavior of all elements (permanent magnets, soft ferromagnet and superconductor) and their mutual effects are helpful to optimize the designs of real systems. Here we present a systematic study of the levitation of a maglev with translational symmetry consisting of a superconducting bar and a guideway with two identic permanent magnets and a soft ferromagnetic material between them. The system is simulated with a numerical model based on the energy minimization method that allows to analyze the mutual interaction of the superconductor, assumed to be in the critical state, and a soft ferromagnet with infinite susceptibility. Results indicate that introducing a soft ferromagnet within the permanent magnets not only increases the levitation force but also improves the stability. Besides, an estimation of the relative sizes and shapes of the soft ferromagnet, permanent magnets and the superconductor in order to obtain large levitation force with full stability is provided.

Nonlinear nuclear magnetic resonance in ferromagnets

International Nuclear Information System (INIS)

Nurgaliev, T.

1988-01-01

The properties of nonlinear nuclear magnetic resonance (NMR) have been studied theoretically by taking into account the interaction between NMR and FMR in the ferromagnets. The Landau-Lifshitz-Bloch equations, describing the electron and nuclear magnetization behaviour in ferromagnets are presented in an integral form for a weakly excited electronic system. The stationary solution of these equations has been analysed in the case of equal NMR and FMR frequencies: the criteria for the appearance of two stable dynamic states is found and the high-frequency magnetic susceptibility for these systems is investigated. 2 figs., 8 refs

Magnetic pinning in superconductor-ferromagnet multilayers

International Nuclear Information System (INIS)

Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

2000-01-01

We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

Ferromagnetic Josephson Junctions for Cryogenic Memory

Science.gov (United States)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Modelling the power losses in the ferromagnetic materials

Directory of Open Access Journals (Sweden)

Detka Kalina

2017-07-01

Full Text Available In this paper, the problem of describing power losses in ferromagnetic materials is considered. The limitations of Steinmetz formula are shown and a new analytical description of losses in a considered material is proposed. The correctness of the developed description is demonstrated experimentally by comparing the results of calculation with the catalogue characteristics for different ferromagnetic materials.

Phase transition of the FCC Ising ferromagnet with competing interactions

International Nuclear Information System (INIS)

Oh, J.H.; Lee, J.Y.; Kim, D.C.

1984-01-01

A molecular field theory with correlation and Monte Carlo simulations are utilized to determine the zero field phase diagram of a fcc Ising model with ferromagnetic nearest neighbor(-J) and antiferromagnetic next neighbor (*aJ) interactions. The correlated molecular field theory predicts a fluctuation induced first order phase transition for 0.87<*a<1.31. Monte Carlo analysis indicates that the first order transition occurs for a somewhat wider range of *a. The transition temperatures obtained by the two methods are in good agreement especially near *a=1 where the fluctuation effect is expected to be large. (Author)

Lattice relaxation and ferromagnetic character of (LaVO₃)_m/SrVO₃ superlattices

KAUST Repository

Schuster, Cosima B.; Lü ders, Ulrike; Fré sard, Raymond; Schwingenschlö gl, Udo

2013-01-01

The experimental observation that vanadate superlattices (LaVO 3)m/SrVO3 show ferromagnetism up to room temperature (Lüders U. et al., Phys. Rev. B, 80 (2009) 241102(R)) is investigated by means of density functional theory, and the band structure for m = 5 and 6 is calculated. A buckling of the interface VO2 layers is found in both cases, but subtle differences in bond length lead to very different properties for even and odd values of m: in the even case, the two interface VO2 layers effectively decouple from the adjacent LaO layers due to a strong bond length enhancement. This results into a local inversion of the orbital occupancy and to the confinement of the charge carriers. In the odd case, the amplitude of the bond length variation is smaller, so that the charge carriers spill into the deeper-lying VO2 layers, and spin-polarised interfaces are obtained. © Copyright EPLA, 2013.

Magnetic-field-induced irreversible antiferromagnetic–ferromagnetic phase transition around room temperature in as-cast Sm–Co based SmCo{sub 7−x}Si{sub x} alloys

Energy Technology Data Exchange (ETDEWEB)

Feng, D.Y.; Zhao, L.Z.; Liu, Z.W., E-mail: zwliu@scut.edu.cn

2016-04-15

A magnetic-field-induced irreversible metamagnetic phase transition from antiferro- to ferromagnetism, which leads to an anomalous initial-magnetization curve lying outside the magnetic hysteresis loop, is reported in arc-melted SmCo{sub 7−x}Si{sub x} alloys. The transition temperatures are near room temperature, much higher than other compounds with similar initial curves. Detailed investigation shows that this phenomenon is dependent on temperature, magnetic field and Si content and shows some interesting characteristics. It is suggested that varying interactions between the Sm and Co layers in the crystal are responsible for the formation of a metastable AFM structure, which induces the anomalous phenomenon in as-cast alloys. The random occupation of 3g sites by Si and Co atoms also has an effect on this phenomenon.

Observation of ferromagnetic resonance in strontium ruthenate (SrRuO3)

Energy Technology Data Exchange (ETDEWEB)

Langner, Matthew C.; Kantner, Colleen L.S.; Chu, Y.H.; Martin, Lane M.; Yu, Pu; Ramesh, R.; Orenstein, Joe

2008-12-03

We report the observation of ferromagnetic resonance (FMR) in SrRuO3 using the time-resolved magnetooptical Kerr effect. The FMR oscillations in the time-domain appear in response to a sudden, optically induced change in the direction of easy-axis anistropy. The high FMR frequency, 250 GHz, and large Gilbert damping parameter, alpha ~;; 1, are consistent with strong spin-orbit coupling. We find that the parameters associated with the magnetization dynamics, including alpha, have a non-monotonic temperature dependence, suggestive of a link to the anomalous Hall effect.

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

Optimization of a superconducting linear levitation system using a soft ferromagnet

Science.gov (United States)

Agramunt-Puig, Sebastia; Del-Valle, Nuria; Navau, Carles; Sanchez, Alvaro

2013-04-01

The use of guideways that combine permanent magnets and soft ferromagnetic materials is a common practice in magnetic levitation transport systems (maglevs) with bulk high-temperature superconductors. Theoretical tools to simulate in a realistic way both the behavior of all elements (permanent magnets, soft ferromagnet and superconductor) and their mutual effects are helpful to optimize the designs of real systems. Here we present a systematic study of the levitation of a maglev with translational symmetry consisting of a superconducting bar and a guideway with two identic permanent magnets and a soft ferromagnetic material between them. The system is simulated with a numerical model based on the energy minimization method that allows to analyze the mutual interaction of the superconductor, assumed to be in the critical state, and a soft ferromagnet with infinite susceptibility. Results indicate that introducing a soft ferromagnet within the permanent magnets not only increases the levitation force but also improves the stability. Besides, an estimation of the relative sizes and shapes of the soft ferromagnet, permanent magnets and the superconductor in order to obtain large levitation force with full stability is provided.

The local structure, magnetic, and transport properties of Cr-doped In2O3 films

International Nuclear Information System (INIS)

Wang Shiqi; An Yukai; Feng Deqiang; Liu Jiwen; Wu Zhonghua

2013-01-01

Cr-doped In 2 O 3 films were deposited on Si (100) substrates by RF-magnetron sputtering technique. The local structure, magnetic, and transport properties of films are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, X-ray absorption fine structure, Hall effect, R-T, and magnetic measurements. Structural analysis clearly indicates that Cr ions substitute for In 3+ sites of the In 2 O 3 lattice in the valence of +2 states and Cr-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. The films with low Cr concentration show a crossover from semiconducting to metallic transport behavior, whereas only semiconducting behavior is observed in high Cr concentration films. The transport property of all films is governed by Mott variable range hopping behavior, suggesting that the carriers are strongly localized. Magnetic characterizations show that the saturated magnetization of films increases first, and then decreases with Cr doping, while carrier concentration n c decreases monotonically, implying that the ferromagnetism is not directly induced by the mediated carriers. It can be concluded the ferromagnetism of films is intrinsic and originates from electrons bound in defect states associated with oxygen vacancies.

Modelling characteristics of ferromagnetic cores with the influence of temperature

International Nuclear Information System (INIS)

Górecki, K; Rogalska, M; Zarȩbski, J; Detka, K

2014-01-01

The paper is devoted to modelling characteristics of ferromagnetic cores with the use of SPICE software. Some disadvantages of the selected literature models of such cores are discussed. A modified model of ferromagnetic cores taking into account the influence of temperature on the magnetizing characteristics and the core losses is proposed. The form of the elaborated model is presented and discussed. The correctness of this model is verified by comparing the calculated and the measured characteristics of the selected ferromagnetic cores.

Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials

International Nuclear Information System (INIS)

Štrbík, V.; Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V.; Knoška, J.; Gál, N.; Chromik, Š.; Sojková, M.; Pisarčík, M.

2017-01-01

Highlights: • Superconductor-ferromagnet-superconductor nanojunction. • Nanojunctions prepared by Ga"3"+ focused ion beam patterning. • Indication of triplet Cooper pair component in junction superconducting current. • Qualitative agreement with theoretical model. - Abstract: The lateral superconductor-ferromagnet–superconductor (SFS) nanojunctions based on high critical temperature superconductor YBa_2Cu_3O_x (YBCO) and half-metallic ferromagnet La_0_._6_7Sr_0_._3_3MnO_3 (LSMO) thin films were prepared to investigate a possible presence of long range triplet component (LRTC) of Cooper pairs in the LSMO. We applied Ga"3"+ focused ion beam patterning to create YBCO/LSMO/YBCO lateral type nanojunctions with LSMO length as small as 40 nm. The resistivity vs. temperature, critical current density vs. temperature and resistance vs. magnetic field dependence were studied to recognize the LRTC of Cooper pairs in the LSMO. A non-monotonic temperature dependence of junction critical current density and a decrease of the SFS nanojunction resistance in increased magnetic field were observed. Only weak manifestations of LRTC and some qualitative agreement with theory were found out in SFS nanojunctions realized from the perovskite materials. The presence of equal-spin triplet component of Cooper pairs in half-metallic LSMO ferromagnet is not such apparent as in SFS junctions prepared from low temperature superconductors NbTiN and half-metallic ferromagnet CrO_2.

Fast nanoscale addressability of nitrogen-vacancy spins via coupling to a dynamic ferromagnetic vortex

Science.gov (United States)

Wolf, M. S.; Badea, R.; Berezovsky, J.

2016-01-01

The core of a ferromagnetic vortex domain creates a strong, localized magnetic field, which can be manipulated on nanosecond timescales, providing a platform for addressing and controlling individual nitrogen-vacancy centre spins in diamond at room temperature, with nanometre-scale resolution. Here, we show that the ferromagnetic vortex can be driven into proximity with a nitrogen-vacancy defect using small applied magnetic fields, inducing significant nitrogen-vacancy spin splitting. We also find that the magnetic field gradient produced by the vortex is sufficient to address spins separated by nanometre-length scales. By applying a microwave-frequency magnetic field, we drive both the vortex and the nitrogen-vacancy spins, resulting in enhanced coherent rotation of the spin state. Finally, we demonstrate that by driving the vortex on fast timescales, sequential addressing and coherent manipulation of spins is possible on ∼100 ns timescales. PMID:27296550

Photoluminescence and Raman studies for the confirmation of oxygen vacancies to induce ferromagnetism in Fe doped Mn:ZnO compound

Energy Technology Data Exchange (ETDEWEB)

Das, J., E-mail: jayashree304@gmail.com [Department of Physics, Silicon Institute of Technology, Bhubaneswar 751024, Odisha (India); Department of Physics, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710 (South Africa); Mishra, D.K. [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710 (South Africa); Department of Physics, Institute of Technical Education and Research, Siksha ‘O’ Anusandhan University, Khandagiri Square, Bhubaneswar 751030, Odisha (India); Srinivasu, V.V. [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710 (South Africa); Sahu, D.R. [Amity Institute of Nanotechnology, Amity University, Noida (India); Roul, B.K. [Institute of Materials Science, Planetarium Building, Acharya Vihar, Bhubaneswar, Odisha (India)

2015-05-15

With a motivation to compare the magnetic property, we synthesised undoped, transition metal (TM) Mn doped and (Mn:Fe) co-doped ZnO ceramics in the compositions ZnO, Zn{sub 0.98}Mn{sub 0.02}O and Zn{sub 0.96}(Mn{sub 0.02}Fe{sub 0.02})O. Systematic investigations on the structural, microstructural, defect structure and magnetic properties of the samples were performed. Low temperature as well as room temperature ferromagnetism has been observed for all our samples, however, enhanced magnetisation at room temperature has been noticed when ZnO is co-doped with Fe along with Mn. Particularly the sample with the composition Zn{sub 0.96}Mn{sub 0.02}Fe{sub 0.02}O showed a magnetisation value more than double of the sample with composition Zn{sub 0.98}Mn{sub 0.02}O, indicating long range strong interaction between the magnetic impurities leading to higher ferromagnetic ordering. Raman and PL studies reveal presence of higher defects in form of oxygen vacancy clusters created in the sample due to Fe co doping. PL study also reveals enhanced luminescence efficiency in the co doped sample. Temperature dependent magnetisation study of this sample shows the spin freezing temperature around 39 K indicating the presence of small impurity phase of Mn{sub 2−x}Zn{sub x}O{sub 3} type. Electron Spin Resonance signal obtained supports ferromagnetic state in the co doped sample. Enhancement of magnetisation is attributed to interactions mediated by magnetic impurities through large number of oxygen vacancies created by Fe{sup 3+} ions forming bound magnetic polarons (BMP) and facilitating long range ferromagnetic ordering in the co- doped system. - Highlights: • Comparison of magnetic property of ZnO, Zn{sub 0.98}Mn {sub 0.02}O and Zn{sub 0.96}(Mn{sub 0.02}Fe{sub 0.02})O. • Observation of enhanced magnetisation at room temperature in (Mn,Fe) doped ZnO. • Raman and PL studies reveal presence of higher oxygen vacancy clusters. • Electron Spin Resonance signal supports

Ferromagnetic nanoparticles for magnetic hyperthermia and thermoablation therapy

Energy Technology Data Exchange (ETDEWEB)

Kita, Eiji; Kayano, Takeru; Sato, Suguru; Minagawa, Makoto; Yanagihara, Hideto; Kishimoto, Mikio [Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan); Oda, Tatsuya; Hashimoto, Shinji; Yamada, Keiichi; Ohkohchi, Nobuhiro [Department of Surgery, Advanced Biomedical Applications, Graduate School of Comprehensive Human Science, University of Tsukuba, Tsukuba 305-8575 (Japan); Mitsumata, Chiharu, E-mail: kita@bk.tsukuba.ac.j [Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

2010-12-01

The use of ferromagnetic nanoparticles for hyperthermia and thermoablation therapies has shown great promise in the field of nanobiomedicine. Even local hyperthermia offers numerous advantages as a novel cancer therapy; however, it requires a remarkably high heating power of more than 1 kW g{sup -1} for heat agents. As a candidate for high heat generation, we focus on ferromagnetic nanoparticles and compare their physical properties with those of superparamagnetic substances. Numerical simulations for ideal single-domain ferromagnetic nanoparticles with cubic and uniaxial magnetic symmetries were carried out and MH curves together with minor loops were obtained. From the simulation, the efficient use of an alternating magnetic field (AMF) having a limited amplitude was discussed. Co-ferrite nanoparticles with various magnitudes of coercive force were produced by co-precipitation and a hydrothermal process. A maximum specific loss power of 420 W g{sup -1} was obtained using an AMF at 117 kHz with H{sub 0} = 51.4 kA m{sup -1} (640 Oe). The relaxation behaviour in the ferromagnetic state below the superparamagnetic blocking temperature was examined by Moessbauer spectroscopy.

Ferromagnetic resonance in low interacting permalloy nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Raposo, V.; Zazo, M.; Flores, A. G.; Iñiguez, J. [Departamento de Física Aplicada, University of Salamanca, E-37071 Salamanca (Spain); Garcia, J.; Vega, V.; Prida, V. M. [Departamento de Física, Universidad de Oviedo, E-33007 Oviedo (Spain)

2016-04-14

Dipolar interactions on magnetic nanowire arrays have been investigated by various techniques. One of the most powerful techniques is the ferromagnetic resonance spectroscopy, because the resonance field depends directly on the anisotropy field strength and its frequency dependence. In order to evaluate the influence of magnetostatic dipolar interactions among ferromagnetic nanowire arrays, several densely packed hexagonal arrays of NiFe nanowires have been prepared by electrochemical deposition filling self-ordered nanopores of alumina membranes with different pore sizes but keeping the same interpore distance. Nanowires’ diameter was changed from 90 to 160 nm, while the lattice parameter was fixed to 300 nm, which was achieved by carefully reducing the pore diameter by means of Atomic Layer Deposition of conformal Al{sub 2}O{sub 3} layers on the nanoporous alumina templates. Field and frequency dependence of ferromagnetic resonance have been studied in order to obtain the dispersion diagram which gives information about anisotropy, damping factor, and gyromagnetic ratio. The relationship between resonance frequency and magnetic field can be explained by the roles played by the shape anisotropy and dipolar interactions among the ferromagnetic nanowires.

Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research. Annual report 2010

International Nuclear Information System (INIS)

Borany, J. von; Fassbender, J.; Heera, V.; Helm, M.

2011-01-01

The following topics are dealt with: Carrier profiling of individual Si nanowires by scanning spreading resistance microscopy, observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells, terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots, a microwave enhanced silicon light emitting pn-diode, on-chip superconductivity via gallium overdoping of silicon, sculpting nanoscale precipitation patterns in nanocomposite thin films via hyperthermal ion deposition, establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation, determination of the saturation magnetization of ion irradiated Py/Ta samples using polar magneto-optical Kerr effect and ferromagnetic resonance, the importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge, pyramidal pits created by single highly charged ions in BaF 2 single crystals, optical properties of silver nanowire arrays with 35 nm periodicity. (HSI)

Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research. Annual report 2010

Energy Technology Data Exchange (ETDEWEB)

Borany, J. von; Fassbender, J.; Heera, V.; Helm, M. (eds.)

2011-10-26

The following topics are dealt with: Carrier profiling of individual Si nanowires by scanning spreading resistance microscopy, observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells, terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots, a microwave enhanced silicon light emitting pn-diode, on-chip superconductivity via gallium overdoping of silicon, sculpting nanoscale precipitation patterns in nanocomposite thin films via hyperthermal ion deposition, establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation, determination of the saturation magnetization of ion irradiated Py/Ta samples using polar magneto-optical Kerr effect and ferromagnetic resonance, the importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge, pyramidal pits created by single highly charged ions in BaF{sub 2} single crystals, optical properties of silver nanowire arrays with 35 nm periodicity. (HSI)

Nonlinear wave propagation through a ferromagnet with damping in ...

Indian Academy of Sciences (India)

magnetic waves in a ferromagnet can be reduced to an integro-differential equation. Keywords. Solitons; integro-differential equations; reductive perturbation method. PACS Nos 41.20 Jb; 05.45 Yv; 03.50 De; 78.20 Ls. 1. Introduction. The phenomenon of propagation of electromagnetic waves in ferromagnets are not only.

Spectrum of ferromagnetic transition metal magnetic excitations and neutron scattering

International Nuclear Information System (INIS)

Kuzemskij, A.L.

1979-01-01

Quantum statistical models of ferromagnetic transition metals as well as methods of their solutions are reviewed. The correspondence of results on solving these models and the data on scattering thermal neutrons in ferromagnetic is discussed

Ferromagnetic resonance study of the half-Heusler alloy NiMnSb. The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators

Energy Technology Data Exchange (ETDEWEB)

Riegler, Andreas

2011-11-25

Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron

Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Althammer, M.; Brandlmaier, A.; Gepraegs, S.; Opel, M.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany); Goennenwein, S.T.B.

2008-06-15

The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 . (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Bacterial Carriers for Glioblastoma Therapy

Directory of Open Access Journals (Sweden)

Nalini Mehta

2017-03-01

Full Text Available Treatment of aggressive glioblastoma brain tumors is challenging, largely due to diffusion barriers preventing efficient drug dosing to tumors. To overcome these barriers, bacterial carriers that are actively motile and programmed to migrate and localize to tumor zones were designed. These carriers can induce apoptosis via hypoxia-controlled expression of a tumor suppressor protein p53 and a pro-apoptotic drug, Azurin. In a xenograft model of human glioblastoma in rats, bacterial carrier therapy conferred a significant survival benefit with 19% overall long-term survival of >100 days in treated animals relative to a median survival of 26 days in control untreated animals. Histological and proteomic analyses were performed to elucidate the safety and efficacy of these carriers, showing an absence of systemic toxicity and a restored neural environment in treated responders. In the treated non-responders, proteomic analysis revealed competing mechanisms of pro-apoptotic and drug-resistant activity. This bacterial carrier opens a versatile avenue to overcome diffusion barriers in glioblastoma by virtue of its active motility in extracellular space and can lead to tailored therapies via tumor-specific expression of tumoricidal proteins.

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2018-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2018-04-02

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Normalization of hemoglobin-based oxygen carrier-201 induced vasoconstriction: targeting nitric oxide and endothelin.

Science.gov (United States)

Taverne, Yannick J; de Wijs-Meijler, Daphne; Te Lintel Hekkert, Maaike; Moon-Massat, Paula F; Dubé, Gregory P; Duncker, Dirk J; Merkus, Daphne

2017-05-01

Hemoglobin-based oxygen carrier (HBOC)-201 is a cell-free modified hemoglobin solution potentially facilitating oxygen uptake and delivery in cardiovascular disorders and hemorrhagic shock. Clinical use has been hampered by vasoconstriction in the systemic and pulmonary beds. Therefore, we aimed to 1 ) determine the possibility of counteracting HBOC-201-induced pressor effects with either adenosine (ADO) or nitroglycerin (NTG); 2 ) assess the potential roles of nitric oxide (NO) scavenging, reactive oxygen species (ROS), and endothelin (ET) in mediating the observed vasoconstriction; and 3 ) compare these effects in resting and exercising swine. Chronically instrumented swine were studied at rest and during exercise after administration of HBOC-201 alone or in combination with ADO. The role of NO was assessed by supplementation with NTG or administration of the eNOS inhibitor N ω -nitro-l-arginine. Alternative vasoactive pathways were investigated via intravenous administration of the ET A /ET B receptor blocker tezosentan or a mixture of ROS scavengers. The systemic and to a lesser extent the pulmonary pressor effects of HBOC-201 could be counteracted by ADO; however, dosage titration was very important to avoid systemic hypotension. Similarly, supplementation of NO with NTG negated the pressor effects but also required titration of the dose. The pressor response to HBOC-201 was reduced after eNOS inhibition and abolished by simultaneous ET A /ET B receptor blockade, while ROS scavenging had no effect. In conclusion, the pressor response to HBOC-201 is mediated by vasoconstriction due to NO scavenging and production of ET. Further research should explore the effect of longer-acting ET receptor blockers to counteract the side effect of hemoglobin-based oxygen carriers. NEW & NOTEWORTHY Hemoglobin-based oxygen carrier (HBOC)-201 can disrupt hemodynamic homeostasis, mimicking some aspects of endothelial dysfunction, resulting in elevated systemic and pulmonary blood

Unexpected large room-temperature ferromagnetism in porous Cu{sub 2}O thin films

Energy Technology Data Exchange (ETDEWEB)

Hou, Xue [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

2015-05-15

Porous Cu{sub 2}O films have been fabricated on porous anodic alumina substrates using DC-reactive magnetron sputtering with pure Cu targets, and unexpectedly large room temperature ferromagnetism has been observed in the films. The maximum saturation magnetic moment along the out-of-plane direction was as high as 94 emu/cm{sup 3}. Photoluminescence spectra show that the ferromagnetism originates with oxygen vacancies. The ferromagnetism could be adjusted by changing the concentration of oxygen vacancies through annealing in an oxygen atmosphere. These observations suggest that the origin of the ferromagnetism is due to coupling between oxygen vacancies with local magnetic moments in the porous Cu{sub 2}O films, which can occur either directly through exchange interactions between oxygen vacancies, or through the mediation of conduction electrons. Such a ferromagnet without the presence of any ferromagnetic dopant may find applications in spintronic devices. - Highlights: • Porous Cu{sub 2}O films were deposited on porous anodic alumina (PAA) substrates. • Significant room-temperature ferromagnetism has been observed in porous Cu{sub 2}O films. • Ferromagnetism of Cu{sub 2}O films exhibited different magnetic signals with the field. • The saturation magnetization is 94 emu/cm{sup 3} with an out-of-plane.

Magnetic pinning in superconductor-ferromagnet multilayers

Energy Technology Data Exchange (ETDEWEB)

Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2000-05-01

We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

Vortex dynamics in ferromagnetic/superconducting bilayers

Energy Technology Data Exchange (ETDEWEB)

Cieplak, M.Z.; Adamus, Z. [Polish Acad Sci, Inst Phys, PL-02668 Warsaw, (Poland); Konczykowski, M. [CEA, DSM, DRECAM, Lab Solides Irradies, Ecole Polytechnique, CNRS-UMR 7642, F-91128 Palaiseau (France); Zhu, L.Y.; Chien, C.L. [Johns Hopkins Univ, Dept Phys and Astron, Baltimore, MD 21218 (United States)

2008-07-01

The dependence of vortex dynamics on the geometry of magnetic domain pattern is studied in the superconducting/ferromagnetic bilayers, in which niobium is a superconductor, and Co/Pt multilayer with perpendicular magnetic anisotropy serves as a ferromagnetic layer. Magnetic domain patterns with different density of domains per surface area and different domain size, w, are obtained for Co/Pt with different thickness of Pt. The dense patterns of domains with the size comparable to the magnetic penetration depth (w {>=} {lambda}) produce large vortex pinning and smooth vortex penetration, while less dense patterns with larger domains (w {>=}{>=} {lambda}) enhance pinning less effectively and result in flux jumps during flux motion. (authors)

Magnetic microstructure of nanocrystalline ferromagnets and nanocrystalline systems combining ferromagnetic and antiferromagnetic phases

Energy Technology Data Exchange (ETDEWEB)

Loeffler, J.; Wagner, W. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Kostorz, G. [Eidgenoessische Technische Hochschule, Zurich (Switzerland); Wiedenmann, A. [HMI Berlin (Germany)

1997-09-01

Magnetic small-angle neutron scattering measurements were performed on nanostructured ferromagnetic materials on the basis of Fe, Ni and Co, produced preferentially by the inert-gas condensation technique, with the aim to determine the magnetic microstructure of mesoscopic small-particle systems. (author) 1 fig., 3 refs.

Unexpected ferromagnetic ordering enhancement with crystallite size growth observed in La{sub 0.5}Ca{sub 0.5}MnO₃ nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Iniama, G.; Ita, B. I. [Department of Pure and Applied Chemistry, University of Calabar, Calabar (Nigeria); Presa, P. de la, E-mail: pmpresa@ucm.es; Hernando, A. [Instituto de Magnetismo Aplicado, UCM-ADIF-CSIC, 28230 Las Rozas (Spain); Fac. CC Físicas, Dpto. Física de Materiales, Univ. Complutense de Madrid, 28040 Madrid (Spain); Alonso, J. M. [Instituto de Magnetismo Aplicado, UCM-ADIF-CSIC, 28230 Las Rozas (Spain); Instituto de Ciencia de Materiales, CSIC, 28049-Madrid (Spain); Multigner, M. [Instituto de Magnetismo Aplicado, UCM-ADIF-CSIC, 28230 Las Rozas (Spain); Cortés-Gil, R.; Ruiz-González, M. L. [Fac. CC Químicas, Dpto. Química Inorgánica, Univ. Complutense de Madrid, 28040 Madrid (Spain); Gonzalez-Calbet, J. M. [Instituto de Magnetismo Aplicado, UCM-ADIF-CSIC, 28230 Las Rozas (Spain); Fac. CC Químicas, Dpto. Química Inorgánica, Univ. Complutense de Madrid, 28040 Madrid (Spain)

2014-09-21

In this paper, the physical properties of half-doped manganite La{sub 0.5}Ca{sub 0.5}MnO₃ with crystallite sizes ranging from 15 to 40 nm are investigated. As expected, ferromagnetic order strengthens at expense of antiferromagnetic one as crystallite size is reduced to 15 nm. However, contrary to previously reported works, an enhancement of saturation magnetization is observed as crystallite size increases from 15 to 22 nm. This unexpected behavior is accompanied by an unusual cell volume variation that seems to induce ferromagnetic-like behavior at expense of antiferromagnetic one. Besides, field cooled hysteresis loops show exchange bias field and coercivity enhancement for increasing cooling fields, which suggest a kind of core-shell structure with AFM-FM coupling for crystallite sizes as small as 15 nm. It is expected that inner core orders antiferromagnetically, whereas uncompensated surface spins behave as spin glass with ferromagnetic-like ordering.

Magnetocaloric effect (MCE): Microscopic approach within Tyablikov approximation for anisotropic ferromagnets

Energy Technology Data Exchange (ETDEWEB)

Kotelnikova, O.A.; Prudnikov, V.N. [Physical Faculty, Lomonosov State University, Department of Magnetism, Moscow (Russian Federation); Rudoy, Yu.G., E-mail: rudikar@mail.ru [People' s Friendship University of Russia, Department of Theoretical Physics, Moscow (Russian Federation)

2015-06-01

The aim of this paper is to generalize the microscopic approach to the description of the magnetocaloric effect (MCE) started by Kokorina and Medvedev (E.E. Kokorina, M.V. Medvedev, Physica B 416 (2013) 29.) by applying it to the anisotropic ferromagnet of the “easy axis” type in two settings—with external magnetic field parallel and perpendicular to the axis of easy magnetization. In the last case there appears the field induced (or spin-reorientation) phase transition which occurs at the critical value of the external magnetic field. This value is proportional to the exchange anisotropy constant at low temperatures, but with the rise of temperature it may be renormalized (as a rule, proportional to the magnetization). We use the explicit form of the Hamiltonian of the anisotropic ferromagnet and apply widely used random phase approximation (RPA) (known also as Tyablikov approximation in the Green function method) which is more accurate than the well known molecular field approximation (MFA). It is shown that in the first case the magnitude of MCE is raised whereas in the second one the MCE disappears due to compensation of the critical field renormalized with the magnetization.

Unexpected ferromagnetic ordering enhancement with crystallite size growth observed in La0.5Ca0.5MnO3 nanoparticles

International Nuclear Information System (INIS)

Iniama, G.; Ita, B. I.; Presa, P. de la; Hernando, A.; Alonso, J. M.; Multigner, M.; Cortés-Gil, R.; Ruiz-González, M. L.; Gonzalez-Calbet, J. M.

2014-01-01

In this paper, the physical properties of half-doped manganite La 0.5 Ca 0.5 MnO 3 with crystallite sizes ranging from 15 to 40 nm are investigated. As expected, ferromagnetic order strengthens at expense of antiferromagnetic one as crystallite size is reduced to 15 nm. However, contrary to previously reported works, an enhancement of saturation magnetization is observed as crystallite size increases from 15 to 22 nm. This unexpected behavior is accompanied by an unusual cell volume variation that seems to induce ferromagnetic-like behavior at expense of antiferromagnetic one. Besides, field cooled hysteresis loops show exchange bias field and coercivity enhancement for increasing cooling fields, which suggest a kind of core-shell structure with AFM-FM coupling for crystallite sizes as small as 15 nm. It is expected that inner core orders antiferromagnetically, whereas uncompensated surface spins behave as spin glass with ferromagnetic-like ordering.

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

International Nuclear Information System (INIS)

Boxberg, Fredrik; Tulkki, Jukka

2007-01-01

Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals. In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model. The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations

Electromagnetic-acoustic coupling in ferromagnetic metals at liquid-helium temperatures

DEFF Research Database (Denmark)

Gordon, R A

1981-01-01

Electromagnetic-acoustic coupling at the surface and in the bulk of ferromagnetic metals at liquid-helium temperatures has been studied using electromagnetically excited acoustic standing-wave resonances at MHz frequencies in a number of ferromagnetic metals and alloys of commercial interest...

Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials

Energy Technology Data Exchange (ETDEWEB)

Štrbík, V., E-mail: vladimir.strbik@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, Bratislava (Slovakia); Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V. [Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, Bratislava (Slovakia); Knoška, J. [Center for Free-Electron Laser Science, DESY, Notkestraße 85, 22607, Hamburg (Germany); Department of Physics, University of Hamburg, Luruper Chaussee 149, 22607, Hamburg (Germany); Gál, N.; Chromik, Š.; Sojková, M.; Pisarčík, M. [Institute of Electrical Engineering, SAS, Dúbravská Cesta 9, Bratislava (Slovakia)

2017-02-15

Highlights: • Superconductor-ferromagnet-superconductor nanojunction. • Nanojunctions prepared by Ga{sup 3+} focused ion beam patterning. • Indication of triplet Cooper pair component in junction superconducting current. • Qualitative agreement with theoretical model. - Abstract: The lateral superconductor-ferromagnet–superconductor (SFS) nanojunctions based on high critical temperature superconductor YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) and half-metallic ferromagnet La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) thin films were prepared to investigate a possible presence of long range triplet component (LRTC) of Cooper pairs in the LSMO. We applied Ga{sup 3+} focused ion beam patterning to create YBCO/LSMO/YBCO lateral type nanojunctions with LSMO length as small as 40 nm. The resistivity vs. temperature, critical current density vs. temperature and resistance vs. magnetic field dependence were studied to recognize the LRTC of Cooper pairs in the LSMO. A non-monotonic temperature dependence of junction critical current density and a decrease of the SFS nanojunction resistance in increased magnetic field were observed. Only weak manifestations of LRTC and some qualitative agreement with theory were found out in SFS nanojunctions realized from the perovskite materials. The presence of equal-spin triplet component of Cooper pairs in half-metallic LSMO ferromagnet is not such apparent as in SFS junctions prepared from low temperature superconductors NbTiN and half-metallic ferromagnet CrO{sub 2}.

Lattice effects on ferromagnetism in perovskite ruthenates

Science.gov (United States)

Cheng, J.-G.; Zhou, J.-S.; Goodenough, John B.

2013-01-01

Ferromagnetism and its evolution in the orthorhombic perovskite system Sr1–xCaxRuO3 have been widely believed to correlate with structural distortion. The recent development of high-pressure synthesis of the Ba-substituted Sr1–yBayRuO3 makes it possible to study ferromagnetism over a broader phase diagram, which includes the orthorhombic Imma and the cubic phases. However, the chemical substitutions introduce the A-site disorder effect on Tc, which complicates determination of the relationship between ferromagnetism and structural distortion. By clarifying the site disorder effect on Tc in several unique series of ruthenates in which the average bond length 〈A–O〉 remains the same but the bond-length variance varies, we are able to demonstrate a parabolic curve of Tc versus mean bond length 〈A–O〉. A much higher Tc ∼ 177 K than that found in orthorhombic SrRuO3 can be obtained from the curve at a bond length 〈A–O〉, which makes the geometric factor t = 〈A–O〉/(√2〈Ru–O〉) ∼ 1. This result reveals not only that the ferromagnetism in the ruthenates is extremely sensitive to the lattice strain, but also that it has an important implication for exploring the structure–property relationship in a broad range of oxides with perovskite or a perovskite-related structure. PMID:23904477

Adjustable ferromagnetic resonance frequency in CoO/CoFeB system

Energy Technology Data Exchange (ETDEWEB)

Bonneau-Brault, A. [CEA Le Ripault, BP16, 37260 Monts (France); GREMAN, CNRS UMR 7347, University of Tours, 37200 Tours (France); Dubourg, S. [CEA Le Ripault, BP16, 37260 Monts (France); Thiaville, A. [LPS, CNRS UMR 8502, University of Paris-Sud, 91405 Orsay Cedex (France); Rioual, S. [LMB EA4522, University of Brest, 6 av. Le Gorgeu, 29238 Brest Cedex 3 (France); Valente, D. [GREMAN, CNRS UMR 7347, University of Tours, 37200 Tours (France)

2015-01-21

Static and dynamic properties of (CoO/CoFeB){sub n} multilayers have been investigated. An anisotropy field enhancement was evidenced when the CoO layer was deposited under the CoFeB layer. Tuning the relative CoFeB and CoO layers thicknesses, high ferromagnetic resonance frequencies up to 4 GHz were achieved. The coupling effect between the CoO and CoFeB layers was induced by a dipolar coupling due to the anisotropic roughness topology of the CoO layer. This anisotropic roughness was induced by the deposition geometry and evidenced by atomic force microscopy. The strength of the dipolar interfacial coupling was calculated thanks to Schlömann's model. Multilayer stacks were fabricated and the magnetic properties observed for the trilayers could be maintained.

Adjustable ferromagnetic resonance frequency in CoO/CoFeB system

International Nuclear Information System (INIS)

Bonneau-Brault, A.; Dubourg, S.; Thiaville, A.; Rioual, S.; Valente, D.

2015-01-01

Static and dynamic properties of (CoO/CoFeB) n multilayers have been investigated. An anisotropy field enhancement was evidenced when the CoO layer was deposited under the CoFeB layer. Tuning the relative CoFeB and CoO layers thicknesses, high ferromagnetic resonance frequencies up to 4 GHz were achieved. The coupling effect between the CoO and CoFeB layers was induced by a dipolar coupling due to the anisotropic roughness topology of the CoO layer. This anisotropic roughness was induced by the deposition geometry and evidenced by atomic force microscopy. The strength of the dipolar interfacial coupling was calculated thanks to Schlömann's model. Multilayer stacks were fabricated and the magnetic properties observed for the trilayers could be maintained

Anomalous Hall effect and Nernst effect in itinerant ferromagnets

International Nuclear Information System (INIS)

Asamitsu, A.; Miyasato, T.; Abe, N.; Fujii, T.; Onose, Y.; Onoda, S.; Nagaosa, N.; Tokura, Y.

2007-01-01

Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in many ferromagnetic metals including pure metals, oxides, and calcogenides, are studied to obtain unified understandings of their origins. We show the universal behavior of anomalous Hall conductivity σ xy as a function of longitudinal conductivity σ xx over six orders of magnitude, which is well reproduced by rigorous unified theory assuming both intrinsic and extrinsic contributions to the AHE. ANE is closely related with AHE and gives us further information about the electronic state in the ground state of ferromagnets. The temperature dependence of transverse Peltier coefficient α xy shows almost similar behavior among various ferromagnets and this behavior is expected from a conventional Boltzmann transport theory

Anomalous Hall effect and Nernst effect in itinerant ferromagnets

International Nuclear Information System (INIS)

Miyasato, T.; Abe, N.; Fujii, T.; Asamitsu, A.; Onose, Y.; Onoda, S.; Nagaosa, N.; Tokura, Y.

2007-01-01

Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in many ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show the universal behavior of anomalous Hall conductivity σ xy as a function of longitudinal conductivity σ xx over six orders of magnitude, which is well reproduced by a recent theory assuming both the intrinsic and extrinsic contributions to the AHE. ANE is closely related with AHE and gives us further information about the electronic state in the ground state of ferromagnets. The temperature dependence of transverse Peltier coefficient α xy shows almost similar behavior among various ferromagnets, and this behavior is expected from a conventional Boltzmann transport theory

Direct measurement of the long-range p -d exchange coupling in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure

Science.gov (United States)

Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.

2017-11-01

The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.

Defect induced ferromagnetism in undoped ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Rainey, K.; Chess, J.; Eixenberger, J.; Tenne, D. A.; Hanna, C. B.; Punnoose, A., E-mail: apunnoos@boisestate.edu [Department of Physics, Boise State University, Boise, Idaho 83725 (United States)

2014-05-07

Undoped ZnO nanoparticles (NPs) with size ∼12 nm were produced using forced hydrolysis methods using diethylene glycol (DEG) [called ZnO-I] or denatured ethanol [called ZnO-II] as the reaction solvent; both using Zn acetate dehydrate as precursor. Both samples showed weak ferromagnetic behavior at 300 K with saturation magnetization M{sub s} = 0.077 ± 0.002 memu/g and 0.088 ± 0.013 memu/g for ZnO-I and ZnO-II samples, respectively. Fourier transform infrared (FTIR) spectra showed that ZnO-I nanocrystals had DEG fragments linked to their surface. Photoluminescence (PL) data showed a broad emission near 500 nm for ZnO-II which is absent in the ZnO-I samples, presumably due to the blocking of surface traps by the capping molecules. Intentional oxygen vacancies created in the ZnO-I NPs by annealing at 450 °C in flowing Ar gas gradually increased M{sub s} up to 90 min and x-ray photoelectron spectra (XPS) suggested that oxygen vacancies may have a key role in the observed changes in M{sub s}. Finally, PL spectra of ZnO showed the appearance of a blue/violet emission, attributed to Zn interstitials, whose intensity changes with annealing time, similar to the trend seen for M{sub s}. The observed variation in the magnetization of ZnO NP with increasing Ar annealing time seems to depend on the changes in the number of Zn interstitials and oxygen vacancies.

Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

Science.gov (United States)

Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

2018-04-01

We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

Superconducting Ferromagnetic Nanodiamond

Czech Academy of Sciences Publication Activity Database

Zhang, G.; Samuely, T.; Xu, Z.; Jochum, J. K.; Volodin, A.; Zhou, S. Q.; May, P. W.; Onufriienko, O.; Kacmarik, J.; Steele, J. A.; Li, J.; Vanacken, J.; Vacík, Jiří; Szabo, P.; Yuan, H. F.; Roeffaers, M. B. J.; Cerbu, D.; Samuely, P.; Hofkens, J.; Moshchalkov, V.V.

2017-01-01

Roč. 11, č. 6 (2017), s. 5358-5366 ISSN 1936-0851 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : nanodiamond * superconductivity and ferromagnetism * spin fluctuations * giant positive magnetoresistance * anamalous Hall effect Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nano-materials (production and properties ) Impact factor: 13.942, year: 2016

Edge states in a ferromagnetic honeycomb lattice with armchair boundaries

Science.gov (United States)

Pantaleón, Pierre A.; Xian, Y.

2018-02-01

We investigate the properties of magnon edge states in a ferromagnetic honeycomb lattice with armchair boundaries. In contrast with fermionic graphene, we find novel edge states due to the missing bonds along the boundary sites. After introducing an external on-site potential at the outermost sites we find that the energy spectra of the edge states are tunable. Additionally, when a non-trivial gap is induced, we find that some of the edge states are topologically protected and also tunable. Our results may explain the origin of the novel edge states recently observed in photonic lattices. We also discuss the behavior of these edge states for further experimental confirmations.

Pressure dependence of excited-state charge-carrier dynamics in organolead tribromide perovskites

Science.gov (United States)

Liu, X. C.; Han, J. H.; Zhao, H. F.; Yan, H. C.; Shi, Y.; Jin, M. X.; Liu, C. L.; Ding, D. J.

2018-05-01

Excited-state charge-carrier dynamics governs the performance of organometal trihalide perovskites (OTPs) and is strongly influenced by the crystal structure. Characterizing the excited-state charge-carrier dynamics in OTPs under high pressure is imperative for providing crucial insights into structure-property relations. Here, we conduct in situ high-pressure femtosecond transient absorption spectroscopy experiments to study the excited-state carrier dynamics of CH3NH3PbBr3 (MAPbBr3) under hydrostatic pressure. The results indicate that compression is an effective approach to modulate the carrier dynamics of MAPbBr3. Across each pressure-induced phase, carrier relaxation, phonon scattering, and Auger recombination present different pressure-dependent properties under compression. Responsiveness is attributed to the pressure-induced variation in the lattice structure, which also changes the electronic band structure. Specifically, simultaneous prolongation of carrier relaxation and Auger recombination is achieved in the ambient phase, which is very valuable for excess energy harvesting. Our discussion provides clues for optimizing the photovoltaic performance of OTPs.

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Directory of Open Access Journals (Sweden)

Faxian Xiu

2011-03-01

Full Text Available Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs, materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism.

Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes.

Science.gov (United States)

Barzola-Quiquia, J; Klingner, N; Krüger, J; Molle, A; Esquinazi, P; Leonhardt, A; Martínez, M T

2012-01-13

We report on the electrical transport properties of single multiwall carbon nanotubes with and without an iron filling as a function of temperature and magnetic field. For the iron filled nanotubes the magnetoresistance shows a magnetic behavior induced by iron, which can be explained by taking into account a contribution of s-d hybridization. In particular, ferromagnetic-like hysteresis loops were observed up to 50 K for the iron filled multiwall carbon nanotubes. The magnetoresistance shows quantum interference phenomena such as universal conductance fluctuations and weak localization effects.

Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

Science.gov (United States)

Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Kiessling, T.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

2009-05-01

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

Topological Aspects of Solitons in Ferromagnets

International Nuclear Information System (INIS)

Ren Jirong; Wang Jibiao; Li Ran; Xu Donghui; Duan Yishi

2008-01-01

Two kinds of topological soliton (skyrmion and magnetic vortex ring) in ferromagnets are studied. They have the common topological origin, a tensor H αβ = n-vector · (∂ α n-vector x ∂ β n-vector ), which describes the non-trivial distribution of local orientation of magnetization n-vector at large distances in space. The topological stability of skyrmion is protected by the winding number. Knot-like topological defect as magnetic vortex rings is also studied. On the assumption that magnetic vortex rings are geometric lines, we present their δ-function distribution in ferromagnetic materials. Furthermore, it is briefly shown that Hopf invariant is a proper topological invariant to describe the topology of magnetic vortex rings

Tunable Magnon Weyl Points in Ferromagnetic Pyrochlores.

Science.gov (United States)

Mook, Alexander; Henk, Jürgen; Mertig, Ingrid

2016-10-07

The dispersion relations of magnons in ferromagnetic pyrochlores with Dzyaloshinskii-Moriya interaction are shown to possess Weyl points, i. e., pairs of topologically nontrivial crossings of two magnon branches with opposite topological charge. As a consequence of their topological nature, their projections onto a surface are connected by magnon arcs, thereby resembling closely Fermi arcs of electronic Weyl semimetals. On top of this, the positions of the Weyl points in reciprocal space can be tuned widely by an external magnetic field: rotated within the surface plane, the Weyl points and magnon arcs are rotated as well; tilting the magnetic field out of plane shifts the Weyl points toward the center Γ[over ¯] of the surface Brillouin zone. The theory is valid for the class of ferromagnetic pyrochlores, i. e., three-dimensional extensions of topological magnon insulators on kagome lattices. In this Letter, we focus on the (111) surface, identify candidates of established ferromagnetic pyrochlores which apply to the considered spin model, and suggest experiments for the detection of the topological features.

Mn induced ferromagnetism spin fluctuation enhancement in Sr{sub 2}Ru{sub 1−x}Mn{sub x}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Zheng, Long; Cai, Jinzhu; Xie, Qiyun; Lv, Bin [Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Mao, Z.Q. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Wu, X.S., E-mail: xswu@nju.edu.cn [Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

2013-09-15

We establish that Sr{sub 2}RuO{sub 4} is extremely close to incommensurate spin density wave instability. With increasing Mn content, the RuO{sub 6} octahedron in the unit cell varies. The octahedron of RuO{sub 6} contracts along c-axis for x<0.20, Mn element mainly showing the +3 chemical valence (Mn{sup 3+}), and it expands along c-axis with further increasing Mn content (x>0.20), and Mn element shows the +4 chemical valence (Mn{sup 4+}). Spin-glass-related ferromagnetism enhancement is observed for x>0.20, which indicates the critical ferromagnetic spin fluctuation due to Mn doping in Sr{sub 2}Ru{sub 1−x}Mn{sub x}O{sub 4}. - Highlights: • The chemical valence of Mn ions changed from Mn{sup 3+} to Mn{sup 4+} with the increase of Mn content. • Spin-glass-related ferromagnetism enhancement behavior is observed. • The electrical resistivity can be fitted using Mott's variable-range hopping model. • The evolution of octahedron with increase of Mn content is given. • The spin fluctuation effect plays an important role in the magnetic property.

Nondegenerate valleys in the half-metallic ferromagnet Fe/WS 2

Science.gov (United States)

Messaoudi, Omar; Ibañez-Azpiroz, Julen; Bouzar, Hamid; Lounis, Samir

2018-01-01

We present a first-principles investigation of the electronic properties of monolayer WS2 coated with an overlayer of Fe. Our ab initio calculations reveal that the system is a half-metallic ferromagnet with a gap of ˜1 eV for the majority spin channel. Furthermore, the combined effect of time-reversal symmetry breaking due to the magnetic Fe overlayer and the large spin-orbit coupling induced by W gives rise to nondegenerate K and K' valleys. This has a tremendous impact on the excited-state properties induced by externally applied circularly polarized light. Our analysis demonstrates that the latter induces a singular hot-spot structure of the transition probability around the K and K' valleys for right and left circular polarization, respectively. We trace back the emergence of this remarkable effect to the strong momentum dependent spin-noncollinearity of the valence band involved. As a main consequence, a strong valley-selective magnetic circular dichroism is obtained, making this system a prime candidate for spintronics and photonics applications.

Larmor diffraction studies on the ferromagnetic superconductor UGe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ritz, Robert; Pfleiderer, Christian [Physik Department E21, TU Muenchen, Garching (Germany); Sokolov, Dmitry; Huxley, Andrew D. [School of Physics and Astronomy, and Centre for Science at Extreme Conditions, The University of Edinburgh (United Kingdom); Keller, Thomas [MPI fuer Festkoerperforschung, Stuttgart (Germany)

2011-07-01

Larmor diffraction (LD) is a novel technique based on the Larmor precession of polarized neutrons that surpasses the resolution of conventional scattering methods by two orders of magnitude. For a long time it was thought that it is not possible to measure LD on systems with depolarizing properties, such as ferromagnets. We present thermal expansion measurements under pressure by means of Larmor diffraction (LD) on the superconducting Ising ferromagnet UGe{sub 2}. LD allowed us to measure magnetization and thermal expansion under pressure in the same setup and hence to directly compare transition temperatures. We found that the thermal expansion near T{sub X}, the transition between two ferromagnetic phases which is believed to drive superconductivity, shows a clear transition in the b- and c-axis under pressure at a temperature a few K higher than for the a-axis and the ferromagnetic Bragg peak. We are considering different mechanisms how this may be connected with the superconductivity in UGe{sub 2}.

Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

Directory of Open Access Journals (Sweden)

Farhad Sattari

2012-03-01

Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.

Longitudinal detection of ferromagnetic resonance using x-ray transmission measurements

International Nuclear Information System (INIS)

Boero, G.; Rusponi, S.; Kavich, J.; Rizzini, A. Lodi; Piamonteze, C.; Nolting, F.; Tieg, C.; Thiele, J.-U.; Gambardella, P.

2009-01-01

We describe a setup for the x-ray detection of ferromagnetic resonance in the longitudinal geometry using element-specific transmission measurements. Thin magnetic film samples are placed in a static magnetic field collinear with the propagation direction of a polarized soft x-ray beam and driven to ferromagnetic resonance by a continuous wave microwave magnetic field perpendicular to it. The transmitted photon flux is measured both as a function of the x-ray photon energy and as a function of the applied static magnetic field. We report experiments performed on a 15 nm film of doped Permalloy (Ni 73 Fe 18 Gd 7 Co 2 ) at the L 3 /L 2 -edges of Fe, Co, and Ni. The achieved ferromagnetic resonance sensitivity is about 0.1 monolayers/√(Hz). The obtained results are interpreted in the framework of a conductivity tensor based formalism. The factors limiting the sensitivity as well as different approaches for the x-ray detection of ferromagnetic resonance are discussed.

Peculiar ferromagnetic insulator state in the low-hole-doped manganites

International Nuclear Information System (INIS)

Algarabel, P.A.; Teresa, J.M. de; Blasco, J.; Ibarra, M.R.; Kapusta, Cz.; Sikora, M.; Zajac, D.; Riedi, P.C.; Ritter, C.

2003-01-01

In this work we show the very different nature of the ferromagnetic state of the low-hole-doped manganites with respect to other manganites showing colossal magnetoresistance. High-field measurements definitively prove the coexistence of ferromagnetic-metallic and ferromagnetic-insulating regions even when the sample is magnetically saturated, with the ground state being inhomogeneous. We have investigated La 0.9 Ca 0.1 MnO 3 as a prototype compound. A wide characterization by means of magnetic and magnetotransport measurements, neutron diffraction, small-angle neutron scattering, and nuclear magnetic resonance has allowed us to establish that the ground state is based on the existence of disordered nanometric double-exchange metallic clusters that coexist with long-range superexchange-based ferromagnetic insulating regions. Under high magnetic field the system reaches magnetization saturation by aligning the magnetic clusters and the insulating matrix, but even if they grow in size, they do not reach the percolation limit

Free energy distribution function of a random Ising ferromagnet

International Nuclear Information System (INIS)

Dotsenko, Victor; Klumov, Boris

2012-01-01

We study the free energy distribution function of a weakly disordered Ising ferromagnet in terms of the D-dimensional random temperature Ginzburg–Landau Hamiltonian. It is shown that besides the usual Gaussian 'body' this distribution function exhibits non-Gaussian tails both in the paramagnetic and in the ferromagnetic phases. Explicit asymptotic expressions for these tails are derived. It is demonstrated that the tails are strongly asymmetric: the left tail (for large negative values of the free energy) is much slower than the right one (for large positive values of the free energy). It is argued that at the critical point the free energy of the random Ising ferromagnet in dimensions D < 4 is described by a non-trivial universal distribution function which is non-self-averaging

Remote field eddy current testing of ferromagnetic tubes

International Nuclear Information System (INIS)

David, B.

1990-01-01

In order to test ferromagnetic tubes using internal probes, Intercontrole and the CEA have carried out theoretical and experimental works and developed a method to adapt the Remote Field Eddy Current technique which has been known and used for 30 years now. This document briefly recalls the basic principles of the Remote Field Eddy Current technique, the various steps of the works carried out and mainly describes examples of field inspection of ferromagnetic tubes and pipes [fr

Ballistic spin filtering across the ferromagnetic-semiconductor interface

Directory of Open Access Journals (Sweden)

Y.H. Li

2012-03-01

Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

International Nuclear Information System (INIS)

Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

2012-01-01

Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2016-03-24

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

2016-03-15

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors

International Nuclear Information System (INIS)

Liu Xuechao; Zhang Huawei; Zhang Tao; Chen Boyuan; Chen Zhizhan; Song Lixin; Shi Erwei

2008-01-01

A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn 2+ for Zn 2+ without additional acceptor doping. The substitution of N for O (N O −) is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn 2+ and Mn 3+ via N O − . The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Giant magnetotransmission and magnetoreflection in ferromagnetic materials

International Nuclear Information System (INIS)

Telegin, A.V.; Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G.; Gan'shina, E.A.; Granovsky, A.B.

2015-01-01

We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed

Giant magnetotransmission and magnetoreflection in ferromagnetic materials

Energy Technology Data Exchange (ETDEWEB)

Telegin, A.V., E-mail: telegin@imp.uran.ru [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Sukhorukov, Yu.P.; Loshkareva, N.N.; Mostovshchikova, E.V.; Bebenin, N.G. [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620137 Yekaterinburg (Russian Federation); Gan' shina, E.A.; Granovsky, A.B. [Moscow State University, 119991 Moscow (Russian Federation)

2015-06-01

We present a brief review on magnetotransmission (magnetoabsorption) and magnetoreflection of natural (unpolarized) light in ferromagnetic chromium chalcogenide spinel, manganites with perovskite structure and thin-film metallic nanostructures in the middle infrared spectral range. The magnetooptical effects under discussion are of high interest for numerous and promising applications in the infrared optoelectronics. - Highlights: • Magnetotransmission and magnetoreflection of light in ferromagnetic are presented. • The effects are greater than common magnetooptical phenomena in the infrared. • The effects may have a different origin depending on a material or spectral range. • Possible applications of the magnetotransmission and magnetoreflection are discussed.

Uniaxial pressure-induced half-metallic ferromagnetic phase transition in LaMnO3

Science.gov (United States)

Rivero, Pablo; Meunier, Vincent; Shelton, William

2016-03-01

We use first-principles theory to predict that the application of uniaxial compressive strain leads to a transition from an antiferromagnetic insulator to a ferromagnetic half-metal phase in LaMnO3. We identify the Q2 Jahn-Teller mode as the primary mechanism that drives the transition, indicating that this mode can be used to tune the lattice, charge, and spin coupling. Applying ≃6 GPa of uniaxial pressure along the [010] direction activates the transition to a half-metallic pseudocubic state. The half-metallicity opens the possibility of producing colossal magnetoresistance in the stoichiometric LaMnO3 compound at significantly lower pressure compared to recently observed investigations using hydrostatic pressure.

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.; Franklin, J. B.; Ryan, M. P.; Lee, J.-S.; Ohldag, Hendrik; McLachlan, M. A.; Alford, N. M.; Roqan, Iman S.

2015-01-01

. %) at low oxygen deposition pressure (<25 mTorr) were ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai

2017-10-04

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

Study of coexistence of ferromagnetism and superconductivity in single-crystal ErRh4B4

International Nuclear Information System (INIS)

Sinha, S.K.; Crabtree, G.W.; Hinks, D.G.; Mook, H.

1981-01-01

Neutron diffraction and resistivity measurements on single crystals of ErRh 4 B 4 have revealed that both superconductivity and ferromagnetic order coexist in this material between 0.71 and 1.2 0 K. In this intermediate phase, a linear polarized modulated structure with a wavelength of approximately 100 A is observed. The modulated moment increases faster than the ferromagnetic moment down to 0.71 K and then disappears suddenly, with loss of superconductivity and a transition to a normal ferromagnetic state. This transition is accompanied by temperature hysteresis of about 60 mK. The same hysteresis, in the inverse sense, is exhibited by the ferromagnetic component. We interpret the intermediate phase as being one of coexisting normal ferromagnetic domains and superconducting sinusoidally ordered domains. Evidence of a small percentage of small ferromagnetic regions of size approx. 100 A is also seen in both the intermediate and ferromagnetic phases. 3 figures

Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

Directory of Open Access Journals (Sweden)

Yaser Hajati

2016-02-01

Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

Simulation study on exchange interaction and unique magnetization near ferromagnetic morphotropic phase boundary.

Science.gov (United States)

Wei, Songrui; Liao, Xiaoqi; Gao, Yipeng; Yang, Sen; Wang, Dong; Song, Xiaoping

2017-11-08

Extensive efforts have been made in searching enhanced functionalities near the so-called morphotropic phase boundaries (MPBs) in both ferroelectric and ferromagnetic materials. Due to the exchange anti-symmetry of the wave function of fermions, it is widely recognized that the exchange interaction plays a critical role in ferromagnetism. As a quantum effect, the exchange interaction is magnitudes larger than electric interaction, leading to a fundamental difference between ferroelectricity and ferromagnetism. In this paper, we establish an energetic model capturing the interplay among the anisotropy energy, magnetostatic energy and the exchange energy to investigate systematically the effects of the exchange energy on the behavior of the ferromagnetic MPB. For the first time, it is found that the exchange energy can narrow the width of MPB region in the composition temperature phase diagram for ferromagnetic MPB systems. As temperature increases, MPB region becomes wider because of the weakening of the exchange interaction. Our simulation results suggest that the exchange energy play a critical role on the unique behavior of ferromagnetic MPB, which is in contrast different from that of ferroelectric MPB.

(Anti)-ferromagnetic coupling in Fe/Si multilayers from polarized neutron reflectomy

NARCIS (Netherlands)

Fredrikze, H.; Graaf, van der A; Valkier, M.; Kohlhepp, J.T.; Broeder, den F.J.A.

1997-01-01

Polarized neutron reflectometry data on Fe/Si multilayers are interpreted using strongly depth-dependent magnetization in the Fe layers. This behaviour is ascribed to a depth-dependent mixture of ferromagnetic and anti-ferromagnetic coupled regions in the sample.

Dynamics of magnetization in ferromagnet with spin-transfer torque

Science.gov (United States)

Li, Zai-Dong; He, Peng-Bin; Liu, Wu-Ming

2014-11-01

We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out

1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

Science.gov (United States)

Karpiak, Bogdan; Dankert, André; Cummings, Aron W.; Power, Stephen R.; Roche, Stephan; Dash, Saroj P.

2018-03-01

We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron- and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be an additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which needs further investigation. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.

High Power Laser Beam Welding of Thick-walled Ferromagnetic Steels with Electromagnetic Weld Pool Support

Science.gov (United States)

Fritzsche, André; Avilov, Vjaceslav; Gumenyuk, Andrey; Hilgenberg, Kai; Rethmeier, Michael

The development of modern high power laser systems allows single pass welding of thick-walled components with minimal distortion. Besides the high demands on the joint preparation, the hydrostatic pressure in the melt pool increases with higher plate thicknesses. Reaching or exceeding the Laplace pressure, drop-out or melt sagging are caused. A contactless electromagnetic weld support system was used for laser beam welding of thick ferromagnetic steel plates compensating these effects. An oscillating magnetic field induces eddy currents in the weld pool which generate Lorentz forces counteracting the gravity forces. Hysteresis effects of ferromagnetic steels are considered as well as the loss of magnetization in zones exceeding the Curie temperature. These phenomena reduce the effective Lorentz forces within the weld pool. The successful compensation of the hydrostatic pressure was demonstrated on up to 20 mm thick plates of duplex and mild steel by a variation of the electromagnetic power level and the oscillation frequency.

Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

Energy Technology Data Exchange (ETDEWEB)

Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

2015-01-15

The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals

International Nuclear Information System (INIS)

Li, Qiang; Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao

2015-01-01

In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al 2 O 3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al 2 O 3 crystal and form stable V Al -V Al ferromagnetic coupling at room temperature

Electromagnetic analysis, structural integrity and progress on mechanical design of the ITER ferromagnetic insert

Energy Technology Data Exchange (ETDEWEB)

Morimoto, M. [Mitsubishi Heavy Industries, Ltd., 1-1 Wadasaki-cho 1-chome, Hyogo-ku, Kobe 652-8585 (Japan)], E-mail: masaaki_morimoto@maia.eonet.ne.jp; Ioki, K.; Terasawa, A.; Utin, Yu.; Barabash, V.; Gribov, Y. [ITER Organization, 13108 St. Paul lez Durance (France)

2009-12-15

Ferromagnetic material is used to reduce the toroidal field ripple in JFT-2M and JT-60U . In ITER, since the ferromagnetic material is inserted in the space between the double walls of ITER Vacuum Vessel (VV), it is called 'ferromagnetic inserts'. Suitable material is selected to satisfy the design requirements of ITER. The proper location and amount of the ferromagnetic inserts are optimized with the goal of reduction of the toroidal field ripple. The ferromagnetic inserts are designed to minimize electromagnetic forces acting on them. The electromagnetic forces have been calculated with the latest disruption scenarios. Magnetization forces due to magnetic fields have also been calculated. Structural integrity has been validated by a structural analysis.

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

Science.gov (United States)

Niedzielski, Bethany Maria

A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy

International Nuclear Information System (INIS)

Sethi, Brahmananda; Sarma, S.; Srinivasan, A.; Santra, S. B.

2014-01-01

Ferromagnetic shape memory alloys are smart materials because they exhibit temperature driven shape memory effect and magnetic field induced strain. Thus two types of energy, i.e. thermal and magnetic, are used to control their shape memory behaviour. Study of critical phenomenon in such materials has received increased experimental and theoretical attention for better understanding of the magnetic phase transition behavior as well as further development of ferromagnetic shape memory materials. In the present study we report the preparation and characterization of bulk Co 45 Ni 25 Ga 30 alloy, prepared by a sequence of arc melting technique followed by homogenization at 1150 °C for 24 hours and ice-water quenching. Structural and magnetic properties of the alloys were studied by means of X-ray diffraction and vibrating sample magnetometer in an applied field range of ±18 kOe equipped with a high temperature oven. We have determined the critical temperature T C (∼375.5 K) and the critical exponents viz; β=0.40, γ=1.68 and δ=5.2. Asymptotic critical exponents β, γ, and δ obey Widom scaling relation, γ+β=βδ, and the magnetization data satisfy the scaling equation of state for second-order phase transition in the asymptotic critical region

Targets with thin ferromagnetic layers for transient field experiments

International Nuclear Information System (INIS)

Gallant, J.L.; Dmytrenko, P.

1982-01-01

Multilayer targets containing a central layer sufficiently thin so that all recoil nuclei can traverse it and subsequently stop in a suitable cubic environment have been prepared. Such targets are required in experiments making use of a magnetic field acting on an ion moving through a ferromagnetic material. The preparation and annealing of the ferromagnetic foils (iron and gadolinium) and the fabrication of the multilayer targets are described. (orig.)

Electron drag in ferromagnetic structures separated by an insulating interface

Science.gov (United States)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

A ferromagnetic surgical system reduces phrenic nerve injury in redo congenital cardiac surgery.

Science.gov (United States)

Shinkawa, Takeshi; Holloway, Jessica; Tang, Xinyu; Gossett, Jeffrey M; Imamura, Michiaki

2017-05-01

A ferromagnetic surgical system (FMwand®) is a new type of dissection device expected to reduce the risk of adjacent tissue damage. We reviewed 426 congenital cardiac operations with cardiopulmonary bypass through redo sternotomy to assess if this device prevented phrenic nerve injury. The ferromagnetic surgical system was used in 203 operations (47.7%) with regular electrocautery and scissors. The preoperative and operative details were similar between the operations with or without the ferromagnetic surgical system. The incidence of phrenic nerve injury was significantly lower with the ferromagnetic surgical system (0% vs 2.7%, P = 0.031). A logistic regression model showed that the use of the ferromagnetic surgical system was significantly associated with reduced odds of phrenic nerve injury (P < 0.001). © The Author 2017. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.

Magnetic decoupling of ferromagnetic metals through a graphene spacer

Energy Technology Data Exchange (ETDEWEB)

Grimaldi, I.; Papagno, M. [Dipartimento di Fisica, Universitá della Calabria, Arcavacata di Rende (CS), 87036 (Italy); Ferrari, L. [Istituto dei Sistemi Complessi, Consiglio Nazionale delle Ricerche, Roma I-00133 (Italy); Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Trieste (Italy); Sheverdyaeva, P.M.; Mahatha, S.K. [Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Trieste (Italy); Pacilé, D., E-mail: daniela.pacile@fis.unical.it [Dipartimento di Fisica, Universitá della Calabria, Arcavacata di Rende (CS), 87036 (Italy); Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Trieste (Italy); Carbone, C. [Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Trieste (Italy)

2017-03-15

We study the magnetic coupling between different ferromagnetic metals (FMs) across a graphene (G) layer, and the role of graphene as a thin covalent spacer. Starting with G grown on a FM substrate (Ni or Co), we deposited on top at room temperature several FM metals (Fe, Ni, Co). By measuring the dichroic effect of 3p photoemission lines we detect the magnetization of the substrate and the sign of the exchange coupling in FM overlayer at room temperature. We show that the G layer magnetically decouples the FM metals. - Highlights: • The magnetic coupling between ferromagnets mediated by graphene is studied. • To this end, the linear dichroic effect in 3p photoemission lines is employed. • For selected junctions no magnetic coupling is attained through graphene. • Graphene inhibits the magnetic alignment that normally occurs between ferromagnets.

Theoretical study on the perpendicular anisotropic magnetoresistance using Rashba-type ferromagnetic model

Science.gov (United States)

Yahagi, Y.; Miura, D.; Sakuma, A.

2018-05-01

We investigated the anisotropic magnetoresistance (AMR) effects in ferromagnetic-metal multi-layers stacked on non-magnetic insulators in the context of microscopic theory. We represented this situation with tight-binding models that included the exchange and Rashba fields, where the Rashba field was assumed to originate from spin-orbit interactions as junction effects with the insulator. To describe the AMR ratios, the DC conductivity was calculated based on the Kubo formula. As a result, we showed that the Rashba field induced both perpendicular and in-plane AMR effects and that the perpendicular AMR effect rapidly decayed with increasing film thickness.

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

Science.gov (United States)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Ising ferromagnet: zero-temperature dynamic evolution

International Nuclear Information System (INIS)

Oliveira, P M C de; Newman, C M; Sidoravicious, V; Stein, D L

2006-01-01

The dynamic evolution at zero temperature of a uniform Ising ferromagnet on a square lattice is followed by Monte Carlo computer simulations. The system always eventually reaches a final, absorbing state, which sometimes coincides with a ground state (all spins parallel), and sometimes does not (parallel stripes of spins up and down). We initiate here the numerical study of 'chaotic time dependence' (CTD) by seeing how much information about the final state is predictable from the randomly generated quenched initial state. CTD was originally proposed to explain how nonequilibrium spin glasses could manifest an equilibrium pure state structure, but in simpler systems such as homogeneous ferromagnets it is closely related to long-term predictability and our results suggest that CTD might indeed occur in the infinite volume limit

Unusual metal-insulator transition in disordered ferromagnetic films

International Nuclear Information System (INIS)

Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

2012-01-01

We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

Modified Sucksmith balances for ferromagnetic and paramagnetic measurements

Energy Technology Data Exchange (ETDEWEB)

Lundquist, N; Myers, H P

1962-02-15

Two balances, one for measurement of ferromagnetic magnetisation, the other for paramagnetic susceptibility measurements, are described. Designs are based on Sucksmith's ring balance but the ring and optical lever system of the latter has been replaced by a strain gauge bridge, which allows the force on the magnetic specimens to be determined via potentiometer readings. The modified balances are very robust, insensitive to vibration and, if desired, suitable for direct recording. Relative accuracies of 0.3 % and 0.5 % are obtained respectively for the ferromagnetic and paramagnetic systems.

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

Science.gov (United States)

Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

2018-03-01

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

Plasmon-induced carrier polarization in semiconductor nanocrystals

Science.gov (United States)

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V.

2018-06-01

Spintronics1 and valleytronics2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In2O3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

The mechanism of persistent photoconductivity induced by minority carrier trapping effect in ultraviolet photo-detector made of polycrystalline diamond film

International Nuclear Information System (INIS)

Wang Lanxi; Chen Xuekang; Wu Gan; Guo Wantu; Cao Shengzhu; Shang Kaiwen; Han Weihua

2011-01-01

Performances of long persistent photoconductivity, high responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photo-detector fabricated on a microcrystalline diamond film. Charge-based deep level transient spectroscopy measurement confirmed that a shallow level with activation energy of 0.21 eV and capture cross section of 9.9 × 10 −20 cm 2 is presented in the band gap of the diamond film. The shallow level may not act as effective recombination center due to the so small activation energy according to Schockly-Read-Hall statistics. The persistent photoconductivity relaxation fits in with the so called “barrier-limited recombination” model, which may be a minority carrier trapping effect related recombination process. The photo-induced minority carriers (electrons in this paper) may be trapped by the shallow level during light irradiation process and then de-trap slowly via thermal excitation or tunneling effect after removing the light source, which contributes to the persistent photoconductivity. The trapping effect can also reduce the probability of carrier recombination, resulting in the high responsivity and the high gain.

Analysis of carrier behavior in C60/P(VDF-TrFE) double-layer capacitor by using electric-field-induced optical second-harmonic generation measurement

Energy Technology Data Exchange (ETDEWEB)

Cui, Xiaojin [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2013-12-21

By using displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier behavior in the indium-tin oxide (ITO)/Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/C60/Au(or Al) capacitors. Two DCM peaks appeared asymmetrically at around −35.5 V and +30.0 V in the dark. Correspondingly, the EFISHG response from the C60 layer was observed, but the peak positions were different with respect to DCM ones. The results show that the spontaneous polarization of the ferroelectric P(VDF-TrFE) polymeric layer directly affects the electric field in the C60 layer, and thus governs the carrier motion in this layer. As a result, the C60 layer serves like an insulator in the dark, while electrons and holes are captured and released at the interface in response to the turn-over of spontaneous polarization of ferroelectric layer. On the other hand, under white light illumination, C60 layer serves like a conductor due to the increase of photogenerated mobile carriers, and these carriers dominate the carrier motions therein. Our findings here will be helpful for analyzing carrier behaviors in organic electronic devices using ferroelectric polymers.

Analysis of carrier behavior in C60/P(VDF-TrFE) double-layer capacitor by using electric-field-induced optical second-harmonic generation measurement

International Nuclear Information System (INIS)

Cui, Xiaojin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-01-01

By using displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier behavior in the indium-tin oxide (ITO)/Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/C60/Au(or Al) capacitors. Two DCM peaks appeared asymmetrically at around −35.5 V and +30.0 V in the dark. Correspondingly, the EFISHG response from the C60 layer was observed, but the peak positions were different with respect to DCM ones. The results show that the spontaneous polarization of the ferroelectric P(VDF-TrFE) polymeric layer directly affects the electric field in the C60 layer, and thus governs the carrier motion in this layer. As a result, the C60 layer serves like an insulator in the dark, while electrons and holes are captured and released at the interface in response to the turn-over of spontaneous polarization of ferroelectric layer. On the other hand, under white light illumination, C60 layer serves like a conductor due to the increase of photogenerated mobile carriers, and these carriers dominate the carrier motions therein. Our findings here will be helpful for analyzing carrier behaviors in organic electronic devices using ferroelectric polymers

Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer

Science.gov (United States)

Huang, Chengxi; Du, Yongping; Wu, Haiping; Xiang, Hongjun; Deng, Kaiming; Kan, Erjun

2018-04-01

The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multistate data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition-metal halide systems. On the basis of first-principles calculations, we reveal that a charged CrBr3 monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr - Br6 units. As an example, we further show that (CrBr3)2Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system not only are useful for fundamental research in multiferroics but also enable a wide range of applications in nanodevices.

Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics

International Nuclear Information System (INIS)

Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar

2011-01-01

Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.

Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

Science.gov (United States)

Bonilla, Manuel; Kolekar, Sadhu; Ma, Yujing; Diaz, Horacio Coy; Kalappattil, Vijaysankar; Das, Raja; Eggers, Tatiana; Gutierrez, Humberto R.; Phan, Manh-Huong; Batzill, Matthias

2018-04-01

Reduced dimensionality and interlayer coupling in van der Waals materials gives rise to fundamentally different electronic1, optical2 and many-body quantum3-5 properties in monolayers compared with the bulk. This layer-dependence permits the discovery of novel material properties in the monolayer regime. Ferromagnetic order in two-dimensional materials is a coveted property that would allow fundamental studies of spin behaviour in low dimensions and enable new spintronics applications6-8. Recent studies have shown that for the bulk-ferromagnetic layered materials CrI3 (ref. 9) and Cr2Ge2Te6 (ref. 10), ferromagnetic order is maintained down to the ultrathin limit at low temperatures. Contrary to these observations, we report the emergence of strong ferromagnetic ordering for monolayer VSe2, a material that is paramagnetic in the bulk11,12. Importantly, the ferromagnetic ordering with a large magnetic moment persists to above room temperature, making VSe2 an attractive material for van der Waals spintronics applications.

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

Science.gov (United States)

Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

2014-08-01

We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

International Nuclear Information System (INIS)

Zou Jianfei; Jin Guojun; Ma Yuqiang

2009-01-01

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

Science.gov (United States)

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Ferromagnetic resonance in a topographically modulated permalloy film

Science.gov (United States)

Sklenar, J.; Tucciarone, P.; Lee, R. J.; Tice, D.; Chang, R. P. H.; Lee, S. J.; Nevirkovets, I. P.; Heinonen, O.; Ketterson, J. B.

2015-04-01

A major focus within the field of magnonics involves the manipulation and control of spin-wave modes. This is usually done by patterning continuous soft magnetic films. Here, we report on work in which we use topographic modifications of a continuous magnetic thin film, rather than lithographic patterning techniques, to modify the ferromagnetic resonance spectrum. To demonstrate this technique we have performed in-plane, broadband, ferromagnetic resonance studies on a 100-nm-thick permalloy film sputtered onto a colloidal crystal with individual sphere diameters of 200 nm. Effects resulting from the, ideally, sixfold-symmetric underlying colloidal crystal were studied as a function of the in-plane field angle through experiment and micromagnetic modeling. Experimentally, we find two primary modes; the ratio of the intensities of these two modes exhibits a sixfold dependence. Detailed micromagnetic modeling shows that both modes are quasiuniform and nodeless in the unit cell but that they reside in different demagnetized regions of the unit cell. Our results demonstrate that topographic modification of magnetic thin films opens additional directions for manipulating ferromagnetic resonant excitations.

Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

2017-10-01

We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

Evidence of weak ferromagnetism in chromium(III) oxide particles

International Nuclear Information System (INIS)

Vazquez-Vazquez, Carlos; Banobre-Lopez, Manuel; Lopez-Quintela, M.A.; Hueso, L.E.; Rivas, J.

2004-01-01

The low temperature (4< T(K)<350) magnetic properties of chromium(III) oxide particles have been studied. A clear evidence of the presence of weak ferromagnetism is observed below 250 K. The magnetisation curves as a function of the applied field show coercive fields due to the canted antiferromagnetism of the particles. Around 55 K a maximum is observed in the zero-field-cooled curves; this maximum can be assumed as a blocking temperature, similarly to ultrafine ferromagnetic particles

Magnetic nesting and co-existence of ferromagnetism and superconductivity

International Nuclear Information System (INIS)

Elesin, V.F.; Kapaev, V.V.; Kopaev, Yu.V.

2004-01-01

In the case of providing for the magnetic nesting conditions of the electron spin dispersion law the co-existence of ferromagnetism and superconductivity is possible by any high magnetization. The co-existence of ferromagnetism and superconductivity in the layered cuprate compounds of the RuSr 2 GdCu 2 O 8 -type is explained on this basis, wherein due to the nonstrict provision of the magnetic nesting condition there exists the finite but sufficiently high critical magnetization [ru

Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

International Nuclear Information System (INIS)

Alouane, M.H. Hadj; Helali, A.; Morris, D.; Maaref, H.; Aimez, V.; Salem, B.; Gendry, M.

2014-01-01

This paper treats the impact of post growth tuned InAs/InP quantum dashes' (QDas) size/composition distribution on carriers' localization and thermal redistribution. The spread of this distribution depends on the experimental conditions used for the phosphorus ion implantation enhanced intermixing process. Atypical temperature-dependent luminescence properties have been observed and found to be strongly dependent on the amount of QDas size/composition dispersion. The experimental results have been reproduced by a model that takes into account the width of the QDas localized states distribution and consequent thermally induced carriers' redistribution. This model gives critical temperature values marking the beginning and the end of carriers delocalization and thermal transfer processes via an intermixing induced carrier's transfer channel located below the wetting layer states. -- Highlights: • We examine optical properties of post growth tuned QDas size/composition distribution. • Carriers' localization and thermal redistribution within inhomogeneously intermixed QDas are the origin of the atypical temperature-dependent luminescence properties. • Localized states ensemble's model is successively used to interpret the experimental results. • The carriers thermal transfer processes occur via an intermixing induced channel located below the wetting layer states. • Intermixing degree strongly influence the critical temperatures marking the beginning and the end of the carriers thermal transfer processes

Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

Science.gov (United States)

Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-07-01

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

Larmor diffraction in the ferromagnetic superconductor UGe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ritz, Robert; Pfleiderer, Christian [Physik Department E21, TU Muenchen, D-85748 Garching (Germany); Sokolov, Dmitry; Huxley, Andrew [School of Physics and Astronomy, Centre for Science at Extreme Conditions, University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Keller, Thomas [MPI fuer Festkoerperforschung, Heisenbergstr. 1, D-70569 Stuttgart (Germany)

2010-07-01

Larmor Diffaction (LD) is a neutron resonance spin-echo technique which allows the study of the lattice constant as well the distribution of lattice constants. It was traditionally thought that neutron spin-echo measurements cannot be used in materials such as superconductors or ferromagnets, because they strongly depolarize a polarized neutron beam. In UGe{sub 2} we are able to demonstrate that this technique may be applied in ferromagnetic superconductors with a magnetic Ising anisotropy. UGe{sub 2} exhibits two ferromagnetic phases which are separated by a transition at temperature T{sub x}. With increasing hydrostatic pressure superconductivity emerges at the pressure for which T{sub x} is suppressed. Using LD we studied the temperature dependence of the lattice constant as well as the distribution of lattice constants for all three axis of UGe{sub 2} down to 0.5 K and at pressures up to 12 kbar.

Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures

NARCIS (Netherlands)

Gurram, Mallikarjuna; Omar, Siddharta; van Wees, Bart

2017-01-01

We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals heterostructure at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with ferromagnetic cobalt electrodes. We report surprisingly large and

Coexistence of Superconductivity and Ferromagnetism in ...

African Journals Online (AJOL)

KBHEEMA

Ferromagnetic alignment can be expected to be strongly opposed by superconductivity. .... To obtain temperature dependent of energy gap of equation (23), we used the same techniques to solve the integral .... band metal ZrZn2. Nature, 412: ...

Anion vacancy-mediated ferromagnetism in atomic-thick Ni3N nanosheets

Science.gov (United States)

Xia, Baorui; Wang, Tongtong; Chi, Xiao; Yu, Xiaojiang; Liu, Peitao; Zhang, Jingyan; Xi, Shibo; Du, Yonghua; Gao, Daqiang

2017-12-01

Realizing spin and electronic behavior of two-dimensional ultrathin nanosheets is significant to construct next generation nanoelectronics. Here, atomic-thick Ni3N nanosheets with clear room temperature ferromagnetism and high saturation magnetization (1.2 emu/g) are reported. X-ray magnetic circular dichroism and first-principles calculation results give the evidence that the observed intrinsic ferromagnetism in Ni3N nanosheets originates from the surface N-deficiency, where alignments of localized large magnetic moments of Ni in the vicinity of the N defect can be aligned parallel to activate macroscopic ferromagnetism. These ultrathin Ni3N nanosheets show great potential application in next-generation electron devices.

Synthesis, characterization, properties, and applications of nanosized ferroelectric, ferromagnetic, or multiferroic materials

International Nuclear Information System (INIS)

Dhak, Debasis; Das, Soma; Communication Engineering.); Dhak, Prasanta

2015-01-01

Recently, there has been an enormous increase in research activity in the field of ferroelectrics and ferromagnetics especially in multiferroic materials which possess both ferroelectric and ferromagnetic properties simultaneously. However, the ferroelectric, ferromagnetic, and multiferroic properties should be further improved from the utilitarian and commercial viewpoints. Nanostructural materials are central to the evolution of future electronics and information technologies. Ferroelectrics and ferromagnetics have already been established as a dominant branch in electronics sector because of their diverse applications. The ongoing dimensional downscaling of materials to allow packing of increased numbers of components into integrated circuits provides the momentum for evolution of nanostructural devices. Nanoscaling of the above materials can result in a modification of their functionality. Furthermore, nanoscaling can be used to form high density arrays of nanodomain nanostructures, which is desirable for miniaturization of devices

Gd doping induced weak ferromagnetic ordering in ZnS nanoparticles synthesized by low temperature co-precipitation technique

Energy Technology Data Exchange (ETDEWEB)

Kaur, Palvinder [Department of Physics, Punjabi University, Patiala, Punjab, 147002 (India); Kumar, Sanjeev, E-mail: sanjeev04101977@gmail.com [Applied Science Department, PEC University of Technology, Chandigarh, 160012 (India); Chen, Chi-Liang, E-mail: chen.cl@nsrrc.org.tw [National Synchrotron Radiation Research Center (NSRRC), Hsinchu, 30076, Taiwan (China); Yang, Kai-Siang [National Synchrotron Radiation Research Center (NSRRC), Hsinchu, 30076, Taiwan (China); Department of Mechanical Engineering, National Taipei University of Technology, Taipei, Taiwan (China); Wei, Da-Hua [Department of Mechanical Engineering, National Taipei University of Technology, Taipei, Taiwan (China); Dong, Chung-Li [Department of Physics, Tamkang University, Tamsui, Taiwan (China); Srivastava, C. [Materials Engineering Department, Indian Institute of Science, Bangalore, 560012 (India); Rao, S.M. [Department of Physics, Punjabi University, Patiala, Punjab, 147002 (India); Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan (China)

2017-01-15

Zn{sub 1−x}Gd{sub x}S nanoparticles with Gd concentration x = 0.00, 0.02 and 0.04 were synthesized by the chemical co-precipitation technique using thioglycerol as capping agent. X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, X-ray absorption near-edge structure (XANES) and vibrating sample magnetometer (VSM) were employed to characterize the as synthesized Gd doped ZnS nanoparticles. XRD and TEM studies show the formation of cubic ZnS nanoparticles with an average size in the range 5–10 nm. The doping did not alter the phase of the ZnS. The PL spectra of doped ZnS nanoparticles showed the presence of sulphur vacancies in the lattice. XANES of Gd doped ZnS nanoparticles depicts spectral changes may arise from charge transfer between host Zn and dopant Gd ions. A VSM study shows that the weak ferromagnetic behaviour increases with increase in Gd doping ZnS nanoparticles. - Highlights: • Gd doped ZnS nanoparticles synthesized using co-precipitation technique. • PL studies depict sulphur and zinc vacancies in Gd doped ZnS nanoparticles. • XANES studies depict the charge transfer between host Zn and dopant Gd ions. • Room temperature weak ferromagnetism is observed in Gd doped ZnS nanoparticles.

Gd doping induced weak ferromagnetic ordering in ZnS nanoparticles synthesized by low temperature co-precipitation technique

International Nuclear Information System (INIS)

Kaur, Palvinder; Kumar, Sanjeev; Chen, Chi-Liang; Yang, Kai-Siang; Wei, Da-Hua; Dong, Chung-Li; Srivastava, C.; Rao, S.M.

2017-01-01

Zn_1_−_xGd_xS nanoparticles with Gd concentration x = 0.00, 0.02 and 0.04 were synthesized by the chemical co-precipitation technique using thioglycerol as capping agent. X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, X-ray absorption near-edge structure (XANES) and vibrating sample magnetometer (VSM) were employed to characterize the as synthesized Gd doped ZnS nanoparticles. XRD and TEM studies show the formation of cubic ZnS nanoparticles with an average size in the range 5–10 nm. The doping did not alter the phase of the ZnS. The PL spectra of doped ZnS nanoparticles showed the presence of sulphur vacancies in the lattice. XANES of Gd doped ZnS nanoparticles depicts spectral changes may arise from charge transfer between host Zn and dopant Gd ions. A VSM study shows that the weak ferromagnetic behaviour increases with increase in Gd doping ZnS nanoparticles. - Highlights: • Gd doped ZnS nanoparticles synthesized using co-precipitation technique. • PL studies depict sulphur and zinc vacancies in Gd doped ZnS nanoparticles. • XANES studies depict the charge transfer between host Zn and dopant Gd ions. • Room temperature weak ferromagnetism is observed in Gd doped ZnS nanoparticles.

Ferromagnetic clustering and ordering in manganese deficient LaMnO3: An EMR probe

International Nuclear Information System (INIS)

Auslender, M.; Shames, A.I.; Rozenberg, E.; Gorodetsky, G.; Hebert, S.; Martin, C.

2007-01-01

Electron magnetic resonance (EMR) properties of LaMn 1-x O 3 (x=0, 0.02 and 0.06) are studied in the range 115-600K. It is shown that above 200K either ferromagnetic clusters or long-range ferromagnetic correlation present in all samples, and that LaMn 0.94 O 3 is ferromagnetic below 113.4+/-1.5K

Development of an engineering model for ferromagnetic shape memory alloys

International Nuclear Information System (INIS)

Tani, Yoshiaki; Todaka, Takashi; Enokizono, Masato

2008-01-01

This paper presents a relationship among stress, temperature and magnetic properties of a ferromagnetic shape memory alloy. In order to derive an engineering model of ferromagnetic shape memory alloys, we have developed a measuring system of the relationship among stress, temperature and magnetic properties. The samples used in this measurement are Fe68-Ni10-Cr9-Mn7-Si6 wt% ferromagnetic shape memory alloy. They are thin ribbons made by rapid cooling in air. In the measurement, the ribbon sample is inserted into a sample holder winding consisting of the B-coil and compensation coils, and magnetized in an open solenoid coil. The ribbon is stressed with attachment weights and heated with a heating wire. The specific susceptibility was increased by applying tension, and slightly increased by heating below the Curie temperature

Ferromagnetic hysteresis and the effective field

NARCIS (Netherlands)

Naus, H.W.L.

2002-01-01

The Jiles-Atherton model of the behavior of ferromagnetic materials determines the irreversible magnetization from the effective field by using a differential equation. This paper presents an exact, analytical solution to the equation, one displaying hysteresis. The inclusion of magnetomechanical

Spin-orbit torques in locally and globally noncentrosymmetric crystals: Antiferromagnets and ferromagnets

KAUST Repository

Železný , J.; Gao, H.; Manchon, Aurelien; Freimuth, Frank; Mokrousov, Yuriy; Zemen, J.; Mašek, J.; Sinova, Jairo; Jungwirth, T.

2017-01-01

One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.

Electric-field-controlled spin reversal in a quantum dot with ferromagnetic contacts

Science.gov (United States)

Hauptmann, J. R.; Paaske, J.; Lindelof, P. E.

2008-05-01

Manipulation of the spin states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin filters, spin transistors and single spin memories as well as for solid-state qubits. An electrically gated quantum dot in the Coulomb blockade regime can be tuned to hold a single unpaired spin-1/2, which is routinely spin polarized by an applied magnetic field. Using ferromagnetic electrodes, however, the quantum dot becomes spin polarized by the local exchange field. Here, we report on the experimental realization of this tunnelling-induced spin splitting in a carbon-nanotube quantum dot coupled to ferromagnetic nickel electrodes with a strong tunnel coupling ensuring a sizeable exchange field. As charge transport in this regime is dominated by the Kondo effect, we can use this sharp many-body resonance to read off the local spin polarization from the measured bias spectroscopy. We demonstrate that the exchange field can be compensated by an external magnetic field, thus restoring a zero-bias Kondo resonance, and we demonstrate that the exchange field itself, and hence the local spin polarization, can be tuned and reversed merely by tuning the gate voltage.

Spin-orbit torques in locally and globally noncentrosymmetric crystals: Antiferromagnets and ferromagnets

KAUST Repository

Železný, J.

2017-01-10

One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.

Ultrasensitive interplay between ferromagnetism and superconductivity in NbGd composite thin films

Science.gov (United States)

Bawa, Ambika; Gupta, Anurag; Singh, Sandeep; Awana, V. P. S.; Sahoo, Sangeeta

2016-01-01

A model binary hybrid system composed of a randomly distributed rare-earth ferromagnetic (Gd) part embedded in an s-wave superconducting (Nb) matrix is being manufactured to study the interplay between competing superconducting and ferromagnetic order parameters. The normal metallic to superconducting phase transition appears to be very sensitive to the magnetic counterpart and the modulation of the superconducing properties follow closely to the Abrikosov-Gor’kov (AG) theory of magnetic impurity induced pair breaking mechanism. A critical concentration of Gd is obtained for the studied NbGd based composite films (CFs) above which superconductivity disappears. Besides, a magnetic ordering resembling the paramagnetic Meissner effect (PME) appears in DC magnetization measurements at temperatures close to the superconducting transition temperature. The positive magnetization related to the PME emerges upon doping Nb with Gd. The temperature dependent resistance measurements evolve in a similar fashion with the concentration of Gd as that with an external magnetic field and in both the cases, the transition curves accompany several intermediate features indicating the traces of magnetism originated either from Gd or from the external field. Finally, the signatures of magnetism appear evidently in the magnetization and transport measurements for the CFs with very low (<1 at.%) doping of Gd.

Magnetic and calorimetric investigations of ferromagnetic shape memory alloy Ni54Fe19Ga27

International Nuclear Information System (INIS)

Sharma, V K; Chattopadhyay, M K; Kumar, Ravi; Ganguli, Tapas; Kaul, Rakesh; Majumdar, S; Roy, S B

2007-01-01

We report results of magnetization and differential scanning calorimetry measurements in the ferromagnetic shape memory alloy Ni 54 Fe 19 Ga 27 . This alloy undergoes an austenite-martensite phase transition in its ferromagnetic state. The nature of the ferromagnetic state, both in the austenite and the martensite phase, is studied in detail. The ferromagnetic state in the martensite phase is found to have higher anisotropy energy as compared with the austenite phase. The estimated anisotropy constant is comparable to that of a well-studied ferromagnetic shape memory alloy system NiMnGa. Further, the present study highlights various interesting features accompanying the martensitic transition (MT). These features suggest the possibility of either a premartensitic transition and/or an inter-MT in this system

Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

Energy Technology Data Exchange (ETDEWEB)

Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2014-08-18

We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

Science.gov (United States)

Liu, Bang-Gui

It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

Transition Metal Dopants Essential for Producing Ferromagnetism in Metal Oxide Nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Johnson, Lydia; Thurber, Aaron P.; Anghel, Josh; Sabetian, Maryam; Engelhard, Mark H.; Tenne, D.; Hanna, Charles; Punnoose, Alex

2010-08-13

Recent claims that ferromagnetism can be produced in nanoparticles of metal oxides without the presence of transition metal dopants has been refuted in this work by investigating 62 high quality well-characterized nanoparticle samples of both undoped and Fe doped (0-10% Fe) ZnO. The undoped ZnO nanoparticles showed zero or negligible magnetization, without any dependence on the nanoparticle size. However, chemically synthesized Zn₁₋xFexO nanoparticles showed clear ferromagnetism, varying systematically with Fe concentration. Furthermore, the magnetic properties of Zn₁₋xFexO nanoparticles showed strong dependence on the reaction media used to prepare the samples. The zeta potentials of the Zn₁₋xFexO nanoparticles prepared using different reaction media were significantly different, indicating strong differences in the surface structure. Electron paramagnetic resonance studies clearly showed that the difference in the ferromagnetic properties of Zn₁₋xFexO nanoparticles with different surface structures originate from differences in the fraction of the doped Fe³⁺ ions that are coupled ferromagnetically.