WorldWideScience

Sample records for carrier density

  1. Carrier-Density-Dependent Lattice Stability in InSb

    International Nuclear Information System (INIS)

    The ultrafast decay of the x-ray diffraction intensity following laser excitation of an InSb crystal has been utilized to observe carrier dependent changes in the potential energy surface. For the first time, an abrupt carrier dependent onset for potential energy surface softening and the appearance of accelerated atomic disordering for a very high average carrier density have been observed. Inertial dynamics dominate the early stages of crystal disordering for a wide range of carrier densities between the onset of crystal softening and the appearance of accelerated atomic disordering

  2. Analytical carrier density and quantum capacitance for graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lingfei; Wang, Wei; Xu, Guangwei; Ji, Zhuoyu; Lu, Nianduan, E-mail: lunianduan@ime.ac.cn; Li, Ling, E-mail: lingli@ime.ac.cn; Liu, Ming [Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2016-01-04

    A disorder based analytical carrier density for graphene is presented here. The carrier density, a basic property of all semiconductors, is obtained based on exponential distribution describing the potential fluctuations induced by impurities and shows good agreement with numerical results. The quantum capacitance is subsequently derived from the carrier density, with a good agreement with experimental measurements. A method for extracting the gate coupling function is also proposed, which relates the internal surface potential with the external applied gate voltage. The essential properties of graphene device physics, such as the temperature, material disorder, and surface potential dependences, are captured in these analytical equations.

  3. Carrier Density and Plasma Frequency of Aluminum Nanofilms

    Institute of Scientific and Technical Information of China (English)

    Hao DU; Jun GONG; Chao SUN; Rongfang HUANG; Lishi WEN; W.Y.Cheung; S.P.Wong

    2003-01-01

    In this work, the prerequisite and mode of electromagnetic response of Al nanofilms to electromagnetic wave field was suggested.Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance,which provided plasma frequency-film thickness relation as well. Similarity of both plasma frequency-film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.

  4. Tuning carrier density at complex oxide interface with metallic overlayer

    Science.gov (United States)

    Zhou, Y.; Shi, Y. J.; Jiang, S. W.; Yue, F. J.; Wang, P.; Ding, H. F.; Wu, D.

    2016-06-01

    We have systematically investigated the electronic transport properties of the LaAlO3/SrTiO3 interfaces with several different metal capping layers. The sheet carrier density can be tuned in a wide range by the metallic overlayer without changing the carrier mobility. The sheet carrier density variation is found to be linearly dependent on the size of metal work function. This behavior is explained by the mechanism of the charge transfer between the oxide interface and the metal overlayer across the LaAlO3 layer. Our results confirm the existence of a built-in electric field in LaAlO3 film with an estimated value of 67.7 eV/Å. Since the metallic overlayer is essential for devices, the present phenomena must be considered for future applications.

  5. Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy

    CERN Document Server

    Yin, Yan; Wang, Li; Jin, Kuijuan; Wang, Wenzhong

    2016-01-01

    Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of ...

  6. Carrier density driven lasing dynamics in ZnO nanowires

    CERN Document Server

    Wille, Marcel; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-01-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature dependent emission onset-time ($t_{\\text{on}}$) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolu...

  7. Carrier density modulation in graphene underneath Ni electrode

    OpenAIRE

    Moriyama, T.; Nagashio, K.; Nishimura, T; Toriumi, A.

    2013-01-01

    We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni double-layered structure has shown a graphene-like back-gate bias dependence. In other words, the electrical properties of graphene are not significantly affected by its contact with Ni. This unexpected result may be ascribed to resist residuals at the metal/gra...

  8. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  9. Carrier density driven lasing dynamics in ZnO nanowires.

    Science.gov (United States)

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ([Formula: see text]) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse. PMID:27103563

  10. Carrier density driven lasing dynamics in ZnO nanowires

    Science.gov (United States)

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron–hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ({t}{{on}}) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

  11. γ radiation caused graphene defects and increased carrier density

    Institute of Scientific and Technical Information of China (English)

    Han Mai-xing; Ji Zhuo-Yu; Shang Li-Wei; Chen Ying-Ping; Wang Hong; Liu Xin; Li Dong-Mei; Liu Ming

    2011-01-01

    We report on a micro-Raman investigation of inducing defects in mono-layer,bi-layer and tri-layer graphene by γ ray radiation.It is found that the radiation exposure results in two-dimensional(2D)and G band position evolution with the layer number increasing and D and D' bands rising,suggesting the presence of defects and related crystal lattice deformation in graphene.Bi-layer graphene is more stable than mono-and tri-layer graphene,indicating that the former is a better candidate in the application of radiation environments.Also,the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.

  12. Analytical formulas for carrier density and Fermi energy in semiconductors with a tight-binding band

    International Nuclear Information System (INIS)

    Analytical formulas for evaluating the relation of carrier density and Fermi energy for semiconductors with a tight-binding band have been proposed. The series expansions for a carrier density with fast convergency have been obtained by means of a Bessel function. A simple and analytical formula for Fermi energy has been derived with the help of the Gauss integration method. The results of the proposed formulas are in good agreement with accurate numerical solutions. The formulas have been successfully used in the calculation of carrier density and Fermi energy in a miniband superlattice system. Their accuracy is in the order of 10−5. (paper)

  13. Electron density and carriers of the diffuse interstellar bands

    OpenAIRE

    Gnacinski, P.; Sikorski, J. K.; Galazutdinov, G. A.

    2007-01-01

    We have used the ionisation equilibrium equation to derive the electron density in interstellar clouds in the direction to 13 stars. A linear relation was found, that allows the determination of the electron density from the Mg I and Mg II column densities in diffuse clouds. The comparison of normalised equivalent width of 12 DIBs with the electron density shows that the DIBs equivalent width do not change with electron density varying in the range ne=0.01-2.5 cm^-3. Therefore the DIBs carrie...

  14. Investigating thermal donors in n-type Cz silicon with carrier density imaging

    Directory of Open Access Journals (Sweden)

    Yu Hu

    2012-09-01

    Full Text Available A new method to map the thermal donor concentration in silicon wafers using carrier density imaging is presented. A map of the thermal donor concentration is extracted with high resolution from free carrier density images of a silicon wafer before and after growth of thermal donors. For comparison, free carrier density mapping is also performed using the resistivity method together with linear interpolation. Both methods reveal the same distribution of thermal donors indicating that the carrier density imaging technique can be used to map thermal donor concentration. The interstitial oxygen concentration can also be extracted using the new method in combination with Wijaranakula's model. As part of this work, the lifetime at medium injection level is correlated to the concentration of thermal donors in the as-grown silicon wafer. The recombination rate is found to depend strongly on the thermal donor concentration except in the P-band region.

  15. Demonstration of the difference in the Casimir force for samples with different charge-carrier densities.

    Science.gov (United States)

    Chen, F; Klimchitskaya, G L; Mostepanenko, V M; Mohideen, U

    2006-10-27

    A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good agreement is found. Our experiment demonstrates that by changing the carrier density of the semiconductor plate by several orders of magnitude it is possible to modify the Casimir interaction. This result may find applications in nanotechnology. PMID:17155446

  16. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

    OpenAIRE

    Lartsev, Arseniy; Yager, Thomas; Bergsten, T.; Tzalenchuk, A.; Janssen, Tjbm; Yakimova, R.; Lara-Avila, Samuel; Kubatkin, Sergey

    2014-01-01

    We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

  17. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

    Science.gov (United States)

    Lartsev, Arseniy; Yager, Tom; Bergsten, Tobias; Tzalenchuk, Alexander; Janssen, T. J. B. M.; Yakimova, Rositza; Lara-Avila, Samuel; Kubatkin, Sergey

    2014-08-01

    We demonstrate reversible carrier density control across the Dirac point (Δn ˜ 1013 cm-2) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

  18. Modes and Carrier Density in Dispersive and Nonlinear Gain Planar Photonic Crystal Cavity

    Directory of Open Access Journals (Sweden)

    Renlong Zhou

    2014-01-01

    Full Text Available The cavity mode and carrier density in dispersive and nonlinear gain planar photonic crystal cavities are studied with the three-dimensional finite-difference time-domain method. Planar photonic crystal cavity can enhance light mater interaction, which can be used to design a photonic crystal cavity laser. With the effect of both total internal reflection and photonic band gap confinement, the frequency responses of the planar photonic crystal cavity can be obtained by simulation. The effect of carrier diffusion is calculated through the laser rate equations. The electric field intensity distribution, temporal behavior of electric field energy, and carrier density characteristics are analyzed from the resonance cavity mode.

  19. Influence of the carrier density in disordered organics with Gaussian density of states on organic field-effect transistors

    Science.gov (United States)

    Scheinert, Susanne; Paasch, Gernot

    2014-01-01

    Transport states in disordered organic semiconductors are widely accepted to be Gaussian distributed with a rather narrow variance (width) of the order of roughly 100-150 meV. This is a result of intensive analysis of experimental data and theoretical work using different model assumptions on hopping transport. For this transport mechanism, the dependencies of the carrier mobility on temperature, carrier density, and field are described by analytical approximations, which can be implemented in advanced device simulation programs. However, also the carrier density itself is determined by the Gaussian density of states (GDOS) and the energy integral over the product of the GDOS and the Fermi distribution function can only be calculated numerically. But meanwhile the published [G. Paasch and S. Scheinert, J. Appl. Phys. 107, 104501 (2010)] analytical approximation for the charge carrier density of organics with GDOS is implemented in the Sentaurus Device simulator. We present here results of detailed numerical simulations of organic field-effect transistors applying this model. It turns out that an important parameter is the distance of the GDOS maximum from the band edge, which is not directly accessible from experiment since the measured DOS shows a much larger band width (the narrow transport GDOS might be the tail). Only for a special case, depending on the variance, the deviations from a non-degenerate inorganic semiconductor are rather small. Furthermore, the results are affected by the properties of the source/drain contacts (Ohmic or Schottky type). Inclusion of both the calculation of the carrier concentration assuming the GDOS and the dependence of the mobility on this concentration shows that the influence of the latter is much larger. Nevertheless, the deviations from simulations for an inorganic semiconductor show that the carrier density for the GDOS should be taken into account in device simulations.

  20. Carrier density correlation with superconductivity - a universal law ?

    International Nuclear Information System (INIS)

    Hall constants (RH) at 300 K of three families of CuO-based superconductors are presented - the 123 YBaCuO with Fe substitution, the 2212 and 2223 Bi systems with Pb, Gd, Nd, Sm substitutions. In all these systems, RH is positive indicating hole conductivity. Tc increases initially as the hole density (p=1RHe) increases and shows a maximum. Each family shows a maximum value of Tc but at different values of p. These data along with the observation of n-type conductivity in NdCeCuO are discussed in the light of certain models. (author). 28 refs., 2 figs., 1 tab

  1. Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors

    Science.gov (United States)

    Modine, N. A.; Wright, A. F.; Lee, S. R.

    The rate of defect-induced carrier recombination is determined by both defect levels and carrier capture cross-sections. Density functional theory (DFT) has been widely and successfully used to predict defect levels, but only recently has work begun to focus on using DFT to determine carrier capture cross-sections. Lang and Henry developed the theory of carrier-capture by multiphonon emission in the 1970s and showed that carrier-capture cross-sections differ between defects primarily due to differences in their carrier capture activation energies. We present an approach to using DFT to calculate carrier capture activation energies that does not depend on an assumed configuration coordinate and that fully accounts for anharmonic effects, which can substantially modify carrier activation energies. We demonstrate our approach for intrinisic defects in GaAs and GaN and discuss how our results depend on the choice of exchange-correlation functional and the treatment of spin polarization. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  2. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

    Energy Technology Data Exchange (ETDEWEB)

    Lartsev, Arseniy; Yager, Tom; Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se; Kubatkin, Sergey [Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); Bergsten, Tobias [SP Technical Research Institute of Sweden, S-50115 Borås (Sweden); Tzalenchuk, Alexander [National Physical Laboratory, Teddington TW110LW (United Kingdom); Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Janssen, T. J. B. M [National Physical Laboratory, Teddington TW110LW (United Kingdom); Yakimova, Rositza [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)

    2014-08-11

    We demonstrate reversible carrier density control across the Dirac point (Δn ∼ 10{sup 13 }cm{sup −2}) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

  3. Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As

    OpenAIRE

    Thevenard, Laura; Largeau, Ludovic; Mauguin, Olivia; Lemaître, Aristide; Khazen, Khashayar; Von Bardeleben, Jürgen

    2007-01-01

    26 pages The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to

  4. Carrier Density Dependence of sp-d Exchange in Nanostructured ZnO:Mn Thin Film

    Directory of Open Access Journals (Sweden)

    Ebrahimizadeh Abrishami M.

    2012-08-01

    Full Text Available In this work, the nanostructured ZnO:Mn thin films with different Mn concentration (5, 10 and 15 mol% have been grown on glass substrates at 500°C by the spray pyrolysis technique. The average grain size was estimated about 25 nm using SEM micrographs. The Faraday rotations were determined in applied magnetic fields up to 1.05 T. The highest values of Faraday rotation were observed in the sample with 5 mol% Mn concentration. The carrier density has been calculated from the Faraday rotations and it is observed that the sp-d exchange in magnetic semiconductor is strongly affected by carrier parameters

  5. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    OpenAIRE

    Astakhov, O.; Carius, R.; F. Finger; Petrusenko, Y.; Borysenko, V.; Barankov, D.

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparin...

  6. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...... a factor of five. Charge trapping and space charge formation were modified by the introduction of titanium dioxide...

  7. Structure, ionic Conductivity and mobile Carrier Density in Fast Ionic Conducting Chalcogenide Glasses

    International Nuclear Information System (INIS)

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x (le) 0.2) glasses by neutron and synchrotron x-ray diffraction. Similar results were obtained both in neutron and synchrotron x-ray diffraction experiments. The results provide direct structural evidence that doping

  8. Structure, ionic Conductivity and mobile Carrier Density in Fast Ionic Conducting Chalcogenide Glasses

    Energy Technology Data Exchange (ETDEWEB)

    Wenlong Yao

    2006-12-12

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M{sub 2}S + (0.1 Ga{sub 2}S{sub 3} + 0.9 GeS{sub 2}) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga{sub 2}S{sub 3} + 0.9 GeS{sub 2} was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M{sub 2}S + (0.1Ga{sub 2}S{sub 3} + 0.9 GeS{sub 2}) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na{sub 2}S + B{sub 2}S{sub 3} (x {le} 0.2) glasses by neutron and synchrotron x-ray diffraction. Similar results were obtained both in neutron and synchrotron x

  9. Quasi 2D Ultrahigh Carrier Density in a Complex Oxide Broken Gap Heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Peng; Droubay, Timothy C.; Jeong, Jong S.; Mkhoyan, K. A.; Sushko, Petr; Chambers, Scott A.; Jalan, Bharat

    2016-01-21

    Two-dimensional (2D) ultra-high carrier densities at complex oxide interfaces are of considerable current research interest for novel plasmonic and high charge-gain devices. However, the highest 2D electron density obtained in oxide heterostructures is thus far limited to 3×1014 cm-2 (½ electron/unit cell/interface) at GdTiO3/SrTiO3 interfaces, and is typically an order of magnitude lower at LaAlO3/SrTiO3 interfaces. Here we show that carrier densities much higher than 3×1014 cm-2 can be achieved via band engineering. Transport measurements for 3 nm SrTiO3/t u.c. NdTiO3/3 nm SrTiO3/LSAT (001) show that charge transfer significantly in excess of the value expected from the polar discontinuity model occurs for higher t values. The carrier density remains unchanged, and equivalent to ½ electron/unit cell/interface for t < 6 unit cells. However, above a critical NdTiO3 thickness of 6 u.c., electrons from the valence band of NdTiO3 spill over into the SrTiO3 conduction band as a natural consequence of the band alignment. An atomistic model consistent with first-principle calculations and experimental results is proposed for the charge transfer mechanisms. These results may provide an exceptional route to the realization of the room-temperature oxide electronics.

  10. Superconductivity in a two-band system with a low carrier density

    International Nuclear Information System (INIS)

    The paper investigates thermodynamic properties of two-zone system with low density of carriers in the vicinity of superconducting transition temperature Tc, taking into account various pairings of carriers. Bell-shaped dependence of Tc on electron concentration is derived and a possibility of occurrence of high-temperature superconductivity is shown. Absolute, CS - CN, and relative, (CS - CN)/CN jumps of electron heat capacity is calculated in the point T=Tc and concentration dependence of these values is studied. The theory allows to derive small, (CS - CN)/CN S - CN)/CN > 1.43 value. Favorable conditions for experimental observation of the bent, depending on chemical potential μ(T) in the point T=Tc, are established. 35 refs., 4 figs

  11. Magnetotransport in the low carrier density ferromagnet EuB6

    International Nuclear Information System (INIS)

    We present a magnetotransport study of the low-carrier density ferromagnet EuB6. This semimetallic compound, which undergoes two ferromagnetic transitions at Tl=15.3 K and Tc=12.5 K, exhibits close to Tl a colossal magnetoresistivity (CMR). We quantitatively compare our data to recent theoretical work, which, however, fails to explain our observations. We attribute this disagreement with theory to the unique type of magnetic polaron formation in EuB6. (c) 2000 American Institute of Physics

  12. Improving the AOAC use-dilution method by establishing a minimum log density value for test microbes on inoculated carriers.

    Science.gov (United States)

    Tomasino, Stephen F; Pines, Rebecca M; Hamilton, Martin A

    2009-01-01

    The AOAC Use-Dilution methods, 955.14 (Salmonella enterica), 955.15 (Staphylococcus aureus), and 964.02 (Pseudomonas aeruginosa), are used to measure the efficacy of disinfectants on hard inanimate surfaces. The methods do not provide procedures to assess log density of the test microbe on inoculated penicylinders (carrier counts). Without a method to measure and monitor carrier counts, the associated efficacy data may not be reliable and repeatable. This report provides a standardized procedure to address this method deficiency. Based on carrier count data collected by four laboratories over an 8 year period, a minimum log density value is proposed to qualify the test results. Carrier count data were collected concurrently with 242 Use-Dilution tests. The tests were conducted on products bearing claims against P. aeruginosa and S. aureus with and without an organic soil load (OSL) added to the inoculum (as specified on the product label claim). Six carriers were assayed per test for a total of 1452 carriers. All 242 mean log densities were at least 6.0 (geometric mean of 1.0 x 10(6) CFU/carrier). The mean log densities did not exceed 7.5 (geometric mean of 3.2 x 10(7) CFU/carrier). For all microbes and OSL treatments, the mean log density (+/- SEM) was 6.7 (+/- 0.07) per carrier (a geometric mean of 5.39 x 10(6) CFU/carrier). The mean log density for six carriers per test showed good repeatability (0.29) and reproducibility (0.32). A minimum mean log density of 6.0 is proposed as a validity requirement for S. aureus and P. aeruginosa. The minimum level provides for the potential inherent variability that may be experienced by a wide range of laboratories and the slight effect due to the addition of an OSL. A follow-up report is planned to present data to support the carrier count procedure and carrier counts for S. enterica. PMID:19916390

  13. Study of energy eigenvalues and density of states of carriers in a triangular quantum wire

    Science.gov (United States)

    Deyasi, Arpan; Bhattacharyya, S.; Das, N. R.

    2012-10-01

    Energy eigenvalues and density of states of carriers in a finite barrier triangular quantum wire embedded inside a rectangular quantum wire are numerically investigated using finite difference technique (FD-Q). Time-independent Schrödinger's equation is solved with appropriate boundary conditions for computation of lowest three eigenstates. The wire is made of lower bandgap GaAs material surrounded by wider bandgap AlxGa1-xAs, and the analysis is carried out by taking into consideration of the conduction band discontinuity and effective mass mismatch at the boundaries. The eigenvalues and the density of states are plotted as function of wire dimension and mole fraction (x). The results are also compared with those obtained using rectangular quantum wire.

  14. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

    KAUST Repository

    Shi, Dong

    2015-01-29

    The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

  15. Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

    KAUST Repository

    Ozdogan, K.

    2012-03-08

    We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.

  16. Imaging the local density of free charge carriers in doped InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hauer, Benedikt; Taubner, Thomas [I. Institute of Physics (1A), RWTH Aachen Univerity, Sommerfeldstrasse 14, 52074 Aachen (Germany); Sladek, Kamil; Haas, Fabian; Schaepers, Thomas; Hardtdegen, Hilde [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425 Juelich (Germany)

    2013-07-01

    Semiconductor nanowires are promising candidates for future nanoelectronic devices. While the bottom-up approach for their growth could simplify the device fabrication, their quantitative characterization remains challenging. We use scattering-type scanning near-field optical microscopy (s-SNOM) to investigate the local density of free electrons in Si-doped InAs nanowires grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). In s-SNOM the evanescent electric field at the apex of an illuminated tip is used to probe a sample at a strongly sub-wavelength resolution. This method is highly sensitive to variations in the sample permittivity around Re(ε) ∼ -2. The use of tunable mid-infrared lasers therefore allows addressing the plasma frequency of free charge carriers in highly doped nanowires. Here, we demonstrate that the sensitivity of s-SNOM is sufficient to detect a slight unintended variation in the carrier concentration during the growth process. Furthermore, using model calculations, we give an estimate of the local density of free electrons.

  17. Carrier-carrier and carrier-phonon scattering in the low-density and low-temperature regime for resonantly pumped semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, M.; Jahnke, F. [Institute for Theoretical Physics, University of Bremen (Germany); Gartner, P. [Institute for Theoretical Physics, University of Bremen (Germany); National Institute for Materials Physics, POB MG-7, Bucharest-Magurele (Romania); Seebeck, J.

    2009-02-15

    We study carrier relaxation due to Coulomb scattering and interaction with LO-phonons in semiconductor quantum dots at low temperatures. Scattering for different relaxation process are evaluated for various carrier distributions that correspond to stages of the typical relaxation kinetics after optical excitation with a weak pulse, generating on average less than one electron per quantum dot. Even when the spacing of the quantum dot energy levels does not match the LO-phonon energy, we.nd that carrier-LO-phonon scattering, in addition to electronelectron and electron-hole interaction, provides efficient carrier relaxation. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy.

    Science.gov (United States)

    Wielgoszewski, Grzegorz; Pałetko, Piotr; Tomaszewski, Daniel; Zaborowski, Michał; Jóźwiak, Grzegorz; Kopiec, Daniel; Gotszalk, Teodor; Grabiec, Piotr

    2015-12-01

    The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling. PMID:26381074

  19. Measuring the mobility of single crystalline wires and its dependence on temperature and carrier density

    Energy Technology Data Exchange (ETDEWEB)

    Amorim, Cleber A; Berengue, Olivia M; Kamimura, Hanay; Chiquito, Adenilson J [NanO LaB-Departamento de Fisica, Universidade Federal de Sao Carlos, CEP 13565-905, CP 676, Sao Carlos, Sao Paulo (Brazil); Leite, Edson R, E-mail: amorim@df.ufscar.br [Laboratorio Interdisciplinar de EletroquImica e Ceramicas, Departamento de Quimica, Universidade Federal de Sao Carlos, CEP 13565-905, CP 676, Sao Carlos, Sao Paulo (Brazil)

    2011-05-25

    Kinetic transport parameters are fundamental for the development of electronic nanodevices. We present new results for the temperature dependence of mobility and carrier density in single crystalline In{sub 2}O{sub 3} samples and the method of extraction of these parameters which can be extended to similar systems. The data were obtained using a conventional Hall geometry and were quantitatively described by the semiconductor transport theory characterizing the electron transport as being controlled by the variable range hopping mechanism. A comprehensive analysis is provided showing the contribution of ionized impurities (low temperatures) and acoustic phonon (high temperatures) scattering mechanisms to the electron mobility. The approach presented here avoids common errors in kinetic parameter extraction from field effect data, serving as a versatile platform for direct investigation of any nanoscale electronic materials.

  20. Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

    Science.gov (United States)

    Zhuang, Houlong L.; Zhang, Lipeng; Xu, Haixuan; Kent, P. R. C.; Ganesh, P.; Cooper, Valentino R.

    2016-05-01

    The emergence of two-dimensional metallic states at the LaAlO3/SrTiO3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO layers. This insulator to-metal transition can be explained through the “polar catastrophe” mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effective in reducing or eliminating this critical thickness. Employing a modified “polar catastrophe” model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more rapidly as a function of layer thickness than in a regular heterostructure. Our first-principles calculations indicate that for nanowire heterostructures a robust one-dimensional electron gas (1DEG) can be induced, consistent with recent experimental observations of 1D conductivity at LAO/STO steps. Similar to LAO/STO 2DEGs, we predict that the 1D charge density decays laterally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carrier dimensionality between 1D and 2D conductivity. Our work provides insight into the creation and manipulation of charge density at an oxide heterostructure interface and therefore may be beneficial for future nanoelectronic devices and for the engineering of novel quantum phases.

  1. Change of carrier density at the pseudogap critical point of a cuprate superconductor.

    Science.gov (United States)

    Badoux, S; Tabis, W; Laliberté, F; Grissonnanche, G; Vignolle, B; Vignolles, D; Béard, J; Bonn, D A; Hardy, W N; Liang, R; Doiron-Leyraud, N; Taillefer, Louis; Proust, Cyril

    2016-03-10

    The pseudogap is a partial gap in the electronic density of states that opens in the normal (non-superconducting) state of cuprate superconductors and whose origin is a long-standing puzzle. Its connection to the Mott insulator phase at low doping (hole concentration, p) remains ambiguous and its relation to the charge order that reconstructs the Fermi surface at intermediate doping is still unclear. Here we use measurements of the Hall coefficient in magnetic fields up to 88 tesla to show that Fermi-surface reconstruction by charge order in the cuprate YBa2Cu3Oy ends sharply at a critical doping p = 0.16 that is distinctly lower than the pseudogap critical point p* = 0.19 (ref. 11). This shows that the pseudogap and charge order are separate phenomena. We find that the change in carrier density n from n = 1 + p in the conventional metal at high doping (ref. 12) to n = p at low doping (ref. 13) starts at the pseudogap critical point. This shows that the pseudogap and the antiferromagnetic Mott insulator are linked. PMID:26901870

  2. Effect of doping-- and field--induced charge carrier density on the electron transport in nanocrystalline ZnO

    OpenAIRE

    Hammer, Maria S; Rauh, Daniel; Deibel, Carsten; Dyakonov, Vladimir

    2008-01-01

    Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping were compared to the accu...

  3. Dynamical co-existence of excitons and free carriers in perovskite probed by density-resolved fluorescent spectroscopic method

    CERN Document Server

    Wang, Wei; Wang, Xiangyuan; Lv, Yanping; Wang, Shufeng; Wang, Kai; Shi, Yantao; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang

    2016-01-01

    Using transient fluorescent spectra at time-zero, we develop a density-resolved fluorescent spectroscopic method for investigating photoproducts in CH3NH3PbI3 perovskite and related photophysics. The density dependent dynamical co-existence of excitons and free carriers over a wide density range is experimentally observed for the first time. The exciton binding energy (EB) and the effective mass of electron-hole pair can be estimated based on such co-existence. No ionic polarization is found contributing to photophysical behavior. It also solves the conflict between the large experimentally measured EB and the small predicted values. The spectroscopic method also helps to detect the true free carrier density under continuous illumination without the interference of ionic conductivity. Our methods and results profoundly enrich the study and understanding of the photophysics in perovskite materials for photovoltaic applications.

  4. Superconductivity in transparent zinc-doped In2O3 films having low carrier density

    Directory of Open Access Journals (Sweden)

    Kazumasa Makise, Nobuhito Kokubo, Satoshi Takada, Takashi Yamaguti, Syunsuke Ogura, Kazumasa Yamada, Bunjyu Shinozaki, Koki Yano, Kazuyoshi Inoue and Hiroaki Nakamura

    2008-01-01

    Full Text Available Thin polycrystalline zinc-doped indium oxide (In2O3–ZnO films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0≤x ≤0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5≤T ≤300 K, H≤6 Tfor 350 nm films annealed in air. Films with 0≤x≤0.03 show the superconducting resistive transition. The transition temperature Tc is below 3.3 K and the carrier density n is about 1025–1026 m−3. The annealed In2O3–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field Hc2 (T for the film with x = 0.01. From the slope of dHc2 /dT, we obtain the coherence length ξ (0 ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

  5. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released t

  6. Influence of optical interference and carrier lifetime on the short circuit current density of organic bulk heterojunction solar cells

    Institute of Scientific and Technical Information of China (English)

    You Hai-Long; Zhang Chun-Fu

    2009-01-01

    Based on simple analytical equations, short circuit current density (Jsc) of the organic bulk heterojunction solar cells has been calculated. It is found that the optical interference effect plays a very important role in the determination of JSC;and obvious oscillatory behaviour of Jsc was observed as a function of thickness. At the same time, the influence of JSC only increases the carrier lifetime on JSC also cannot be neglected. When the carrier lifetime is relatively short, at the initial stage and then decreases rapidly with the increase of active layer thickness. However, for a relatively long carrier lifetime, the exciton dissociation probability must be considered, and Jsc behaves wave-like with the increase of active layer thickness. The validity of this model is confirmed by the experimental results.

  7. Quantitative Carrier Density Wave Imaging in Silicon Solar Cells Using Photocarrier Radiometry and Lock-in Carrierography

    Science.gov (United States)

    Sun, Q. M.; Melnikov, A.; Mandelis, A.

    2016-04-01

    InGaAs camera-based low-frequency homodyne and high-frequency heterodyne lock-in carrierographies (LIC) are introduced for spatially resolved imaging of optoelectronic properties of Si solar cells. Based on the full theory of solar cell photocarrier radiometry (PCR), several simplification steps were performed aiming at the open circuit case, and a concise expression of the base minority carrier density depth profile was obtained. The model shows that solar cell PCR/LIC signals are mainly sensitive to the base minority carrier lifetime. Both homodyne and heterodyne frequency response data at selected locations on a mc-Si solar cell were used to extract the local base minority carrier lifetimes by best fitting local experimental data to theory.

  8. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    Science.gov (United States)

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  9. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-08-01

    Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  10. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    International Nuclear Information System (INIS)

    The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO) and non-polar SrTiO3 (STO). Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO) layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides

  11. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    International Nuclear Information System (INIS)

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells

  12. Enhance Carrier Density Distributions between Double Quantum Wells Violet Ingan Laser Diode by Using Alingan as a Blocking Layer

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, Rafid A; Ibrahim, Kamarulazizi, E-mail: rafid_alabdali@yahoo.com, E-mail: kamarul@usm.my [Nano-Optoelectronics Research and Technology Laboratory (N.O.R), School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2011-02-15

    Enhancement of carrier (electron and hole) density distributions between double quantum wells (QWs) violet InGaN laser diode (LD) has numerically been obtained by using quaternary AlInGaN as a blocking layer (BL) instead of conventional ternary AlGaN BL. Simulation results indicate that the quaternary BL has a higher refractive index and optical intensity inside the active region than the ternary BL which leads to reducing the threshold current of the LD from 16.42 mA with ternary BL to 13.67 mA with quaternary BL.

  13. Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface

    Science.gov (United States)

    Kumar, Neeraj; Kitoh, Ai; Inoue, Isao H.

    2016-05-01

    Electrostatic carrier accumulation on an insulating (100) surface of SrTiO3 by fabricating a field effect transistor with Parylene-C (6 nm)/HfO2 (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density is about 10 times as large as ( is the sheet capacitance of the gate insulator, VG is the gate voltage, and e is the elementary charge). The channel is so clean to exhibit small subthreshod swing of 170 mV/decade and large mobility of 11 cm2/Vs for of 1 × 1014 cm‑2 at room temperature. Since does not depend on either VG nor time duration, beyond is solely ascribed to negative charge compressibility of the carriers, which was in general considered as due to exchange interactions among electrons in the small limit. However, the observed is too large to be naively understood by the framework. Alternative ideas are proposed in this work.

  14. Ionic Wind Phenomenon and Charge Carrier Mobility in Very High Density Argon Corona Discharge Plasma

    Science.gov (United States)

    Nur, M.; Bonifaci, N.; Denat, A.

    2014-04-01

    Wind ions phenomenon has been observed in the high density argon corona discharge plasma. Corona discharge plasma was produced by point to plane electrodes and high voltage DC. Light emission from the recombination process was observed visually. The light emission proper follow the electric field lines that occur between point and plane electrodes. By using saturation current, the mobilities of non-thermal electrons and ions have been obtained in argon gas and liquid with variation of density from 2,5 1021 to 2 1022 cm-3. In the case of ions, we found that the behaviour of the apparent mobility inversely proportional to the density or follow the Langevin variation law. For non-thermal electron, mobility decreases and approximately follows a variation of Langevin type until the density <= 0,25 the critical density of argon.

  15. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  16. Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

    Science.gov (United States)

    Singh, Baljinder; Singh, Janpreet; Kaur, Jagdish; Moudgil, R. K.; Tripathi, S. K.

    2016-06-01

    Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

  17. Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide.

    Science.gov (United States)

    Nayak, Avinash P; Yuan, Zhen; Cao, Boxiao; Liu, Jin; Wu, Junjie; Moran, Samuel T; Li, Tianshu; Akinwande, Deji; Jin, Changqing; Lin, Jung-Fu

    2015-09-22

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide (TMD) that differs from other two-dimensional (2D) compounds such as graphene due to its unique semiconducting, tunable-band-gap nature. Multilayered WS2 exhibits an indirect band gap Eg of ∼1.3 eV, along with a higher load-bearing ability that is promising for strain-tuning device applications, but the electronic properties of multilayered WS2 at higher strain conditions (i.e., static strain >12%) remain an open question. Here we have studied the structural, electronic, electrical, and vibrational properties of multilayered WS2 at hydrostatic pressures up to ∼35 GPa experimentally in a diamond anvil cell and theoretically using first-principles ab initio calculations. Our results show that WS2 undergoes an isostructural semiconductor-to-metallic (S-M) transition at approximately 22 GPa at 280 K, which arises from the overlap of the highest valence and lowest conduction bands. The S-M transition is caused by increased sulfur-sulfur interactions as the interlayer spacing decreases with applied hydrostatic pressure. The metalization in WS2 can be alternatively interpreted as a 2D to 3D (three-dimensional) phase transition that is associated with a substantial modulation of the charge carrier characteristics including a 6-order decrease in resistivity, a 2-order decrease in mobility, and a 4-order increase in carrier concentration. These distinct pressure-tunable characteristics of the dimensionalized WS2 differentiate it from other TMD compounds such as MoS2 and promise future developments in strain-modulated advanced devices. PMID:26258661

  18. Optical gas sensing responses in transparent conducting oxides with large free carrier density

    Science.gov (United States)

    Ohodnicki, P. R.; Andio, M.; Wang, C.

    2014-07-01

    Inherent advantages of optical-based sensing devices motivate a need for materials with useful optical responses that can be utilized as thin film functional sensor layers. Transparent conducting metal oxides with large electrical conductivities as typified by Al-doped ZnO (AZO) display attractive properties for high temperature optical gas sensing through strong optical transduction of responses conventionally monitored through changes in measured electrical resistivity. An enhanced optical sensing response in the near-infrared and ultraviolet/visible wavelength ranges is demonstrated experimentally and linked with characteristic modifications to the dielectric constant due to a relatively high concentration of free charge carriers. The impact of light scattering on the magnitude and wavelength dependence of the sensing response is also discussed highlighting the potential for tuning the optical sensing response by controlling the surface roughness of a continuous film or the average particle size of a nanoparticle-based film. The physics underpinning the optical sensing response for AZO films on planar substrates yields significant insight into the measured sensing response for optical fiber-based evanescent wave absorption spectroscopy sensors employing an AZO sensing layer. The physics of optical gas sensing discussed here provides a pathway towards development of sensing materials for extreme temperature optical gas sensing applications. As one example, preliminary results are presented for a Nb-doped TiO2 film with sufficient stability and relatively large sensing responses at sensing temperatures greater than 500 °C.

  19. Domain control of carrier density at a semiconductor-ferroelectric interface

    Science.gov (United States)

    Misirlioglu, I. B.; Yildiz, M.; Sendur, K.

    2015-10-01

    Control of charge carrier distribution in a gated channel via a dielectric layer is currently the state of the art in the design of integrated circuits such as field effect transistors. Replacing linear dielectrics with ferroelectrics would ultimately lead to more energy efficient devices as well as the added advantage of the memory function of the gate. Here, we report that the channel-off/channel-on states in a metal/ferroelectric/semiconductor stack are actually transitions from a multi domain state to a single domain state of the ferroelectric under bias. In our approach, there is no a priori assumption on the single or multi-domain nature of the ferroelectric layer that is often neglected in works discussing the ferroelectric-gate effect on channel conductivity interfacing a ferroelectric. We also predict that semiconductor/ferroelectric/semiconductor stacks can function at even lower gate voltages than metal/ferroelectric/semiconductor stacks when an n-type semiconductor is placed between the ferroelectric and the gate metal. Our results suggest the ultimate stability of the multidomain state whenever it interfaces a semiconductor electrode and that a switchable single domain state may not be necessary to achieve effective control of conductivity in a p-type channel. Finally, we discuss some experimental results in the literature in light of our findings.

  20. Magnetotransport of the low-carrier density one-dimensional =1/2 antiferromagnet Yb4As3

    Indian Academy of Sciences (India)

    P Gegenwart; H Aoki; T Cichorek; J Custers; M Jaime; A Ochiai; F Steglich

    2002-05-01

    The transport properties of the semimetallic quasi-one-dimensional = 1/2 antiferromagnet Yb4As3 have been studied by performing low-temperature ( ≥ 0.02 K) and high magnetic-field ( ≤ 60 T) measurements of the electrical resistivity ρ(, ). For ≳ 2 K a `heavy-fermion’-like behavior ρ() = 2 with huge and nearly field-independent coefficient ≈ 3 cm/K2 is observed, whereas at lower temperatures ρ() deviates from this behavior and slightly increases to the lowest . In > 0 and ≲ 6 K the resistivity shows an anomalous magnetic-history dependence together with an unusual relaxation behavior. In the isothermal resistivity Shubnikov–de Haas (SdH) oscillations, arising from a low-density system of mobile As-4 holes, with a frequency of 25 T have been recorded. From the - and -dependence of the SdH oscillations an effective carrier mass of (0.275 ± 0.005) 0 and a charge-carrier mean-free path of 215 Å are determined. Furthermore, in ≥ 15 T, the system is near the quantum limit and spin-splitting effects are observed.

  1. Diffuse Surface Scattering and Quantum Size Effects in the Surface Plasmon Resonances of Low Carrier Density Nanocrystals

    CERN Document Server

    Monreal, R Carmina; Apell, S Peter

    2016-01-01

    The detailed understanding of the physical parameters that determine Localized Surface Plasmon Resonances (LSPRs) is essential to develop new applications for plasmonics. A relatively new area of research has been opened by the identification of LSPRs in low carrier density systems obtained by doping semiconductor quantum dots. We investigate theoretically how diffuse surface scattering of electrons in combination with the effect of quantization due to size (QSE) impact the evolution of the LSPRs with the size of these nanosystems. Two key parameters are the length $R_0$ giving the strength of the QSE and the velocity $\\beta_T$ of the electronic excitations entering in the length scale for diffuse surface scattering. While the QSE itself only produces a blueshift in energy of the LSPRs, the diffuse surface scattering mechanism gives to both energy and linewidth an oscillatory-damped behavior as a function of size, with characteristic lengths that depend on material parameters. Thus, the evolution of the LSPRs...

  2. TEMPO-Oxidized Nanofibrillated Cellulose as a High Density Carrier for Bioactive Molecules.

    Science.gov (United States)

    Weishaupt, Ramon; Siqueira, Gilberto; Schubert, Mark; Tingaut, Philippe; Maniura-Weber, Katharina; Zimmermann, Tanja; Thöny-Meyer, Linda; Faccio, Greta; Ihssen, Julian

    2015-11-01

    Controlled and efficient immobilization of specific biomolecules is a key technology to introduce new, favorable functions to materials suitable for biomedical applications. Here, we describe an innovative and efficient, two-step methodology for the stable immobilization of various biomolecules, including small peptides and enzymes onto TEMPO oxidized nanofibrillated cellulose (TO-NFC). The introduction of carboxylate groups to NFC by TEMPO oxidation provided a high surface density of negative charges able to drive the adsorption of biomolecules and take part in covalent cross-linking reactions with 1-ethyl-3-[3-(dimethylamino)propyl]carbodiimide (EDAC) and glutaraldehyde (Ga) chemistry. Up to 0.27 μmol of different biomolecules per mg of TO-NFC could be reversibly immobilized by electrostatic interaction. An additional chemical cross-linking step prevented desorption of more than 80% of these molecules. Using the cysteine-protease papain as model, a highly active papain-TO-NFC conjugate was achieved. Once papain was immobilized, 40% of the initial enzymatic activity was retained, with an increase in kcat from 213 to >700 s(-1) for the covalently immobilized enzymes. The methodology presented in this work expands the range of application for TO-NFC in the biomedical field by enabling well-defined hybrid biomaterials with a high density of functionalization. PMID:26413931

  3. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes

    Science.gov (United States)

    Liu, Wei; Zhao, Degang; Jiang, Desheng; Chen, Ping; Liu, Zongshun; Zhu, Jianjun; Yang, Jing; He, Xiaoguang; Li, Xiaojing; Li, Xiang; Liang, Feng; Liu, Jianping; Zhang, Liqun; Yang, Hui; Zhang, Yuantao; Du, Guotong

    2016-08-01

    The droop behaviors of two InGaN/GaN multiple-quantum-well blue-green light-emitting diodes grown on c-plane sapphires with different In content are investigated. The higher-In-content sample exhibits a lower efficiency, followed by a more significant droop as current increases in comparison with the lower-In-content diode. However, it is found that for both samples their efficiency reduction trend with increasing carrier density is nearly the same. Combining with the recombination rate equations, an analysis reveals that at the same injection current level, the carrier density in the higher-In-content quantum wells which have stronger polarization effect is larger due to the smaller bimolecular recombination coefficient, resulting in a more significant droop with current. Therefore, a study on the dependence of efficiency on carrier density can provide a clear elucidation to the physical mechanism of the efficiency droop behavior.

  4. Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities

    Science.gov (United States)

    Pellegrini, B.; Marconcini, P.; Macucci, M.; Fiori, G.; Basso, G.

    2016-05-01

    We present a model for 1/f noise in graphene based on an analysis of the effect of charge trapping and detrapping events on the fluctuations of the number of charge carriers. Inclusion of a Gaussian distribution of fluctuations of the electrostatic potential enables us to reproduce all the various experimentally observed behaviors of the flicker noise power spectral density as a function of carrier density, both for monolayer and bilayer graphene. The key feature of a flicker noise minimum at the Dirac point that appears in bilayer graphene and sometimes also in monolayer graphene is explained in terms of the disappearance, when the number of electrons equals that of holes, of the carrier number fluctuations induced by trapping events. Such a disappearance is analyzed with two different approaches, in order to gain a better understanding of the physical origin of the effect, and to make some considerations about possible analogous phenomena in other semiconductors.

  5. Electrical transport properties of amorphous Zn-doped In2O3 films in a wide region of carrier density

    International Nuclear Information System (INIS)

    We have systematically investigated the temperature dependence of resistivity p and Hall mobility μ of amorphous Zn-doped In2O3 films (350 nm) in the temperature range 2.0 to 300 K. We prepared film specimens with carrier density n ∼ (2 x 1017 - 6 x 1020/cm3) and p ∼ (3 - 4000)μΩcm (300 K) by changing the gas pressure of oxygen during DC-magnetron sputtering. The μ(n) shows the convex characteristic with a broad peak near n ∼ 3 x 1020cm3, taking the value μ ≅ 50cm2/Vs. In the low n region, it has been found that the μ seems to change as μ ∝ n1/3 . For films with n ≥ 5 x 1019/cm3, the p(T) shows the metallic behavior between ∼ 20 K and 300 K. On the other hand, for films with n ≤ 1019/cm3, p(T) essentially shows the insulating behavior at whole temperatures. From the analysis of the p(T) in the expression of p(T) = p0 exp(A/Tn) at low temperatures, we obtained that the data is well explained by n = 1/2 for dirty films. The estimated electron mean free path l(4 K) deviates from the linear dependence of l ∝ n to decease abruptly near l ∼ 0.2 - 0.4 nm corresponding to the average distance between In and In (or oxygen).

  6. Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Dauffy, L S; Koch, J A

    2005-10-20

    This report investigates the use of x-rays and electrons to excite a CVD polycrystalline diamond detector during a double pulse experiment to levels corresponding to those expected during a successful (1D clean burn) and a typical failed ignition (2D fizzle) shot at the National Ignition Facility, NIF. The monitoring of a failed ignition shot is the main goal of the diagnostic, but nevertheless, the study of a successful ignition shot is also important. A first large neutron pulse is followed by a smaller pulse (a factor of 1000 smaller in intensity) after 50 to 300 ns. The charge carrier densities produced during a successful and failed ignition shot are about 10{sup 15} e-h+/cm{sup 3} and 2.6* 10{sup 12} e-h+/cm{sup 3} respectively, which is lower than the 10{sup 16} e-h+/cm{sup 3} needed to saturate the diamond wafer due to charge recombination. The charge carrier density and the signal induced in the diamond detector are calculated as a function of the incident x-ray and electron energy, flux, and detector dimensions. For available thicknesses of polycrystalline CVD diamond detectors (250 {micro}m to 1000 {micro}m), a flux of over 10{sup 11} x-rays/cm{sup 2} (with x-ray energies varying from 6 keV to about 10 keV) or 10{sup 9} {beta}/cm{sup 2} (corresponding to 400 pC per electron pulse, E{sub {beta}} > 800 keV) is necessary to excite the detector to sufficient levels to simulate a successful ignition's 14 MeV peak. Failed ignition levels would require lower fluxes, over 10{sup 8} x-rays/cm{sup 2} (6 to 10 keV) or 10{sup 6} {beta}/cm{sup 2} (1 pC per electron pulse, E{sub {beta}} > 800 keV). The incident pulse must be delivered on the detector surface in several nanoseconds. The second pulse requires fluxes down by a factor of 1000. Several possible x-ray beam facilities are investigated: (1) the LBNL Advanced Light Source, (2) the Stanford SLAC and SPEAR, (3) the BNL National Synchrotron Light Source, (4) the ANL Advanced Photon Source, (5) the LLNL Janus

  7. Efficacy, but not antibody titer or affinity, of a heroin hapten conjugate vaccine correlates with increasing hapten densities on tetanus toxoid, but not on CRM197 carriers.

    Science.gov (United States)

    Jalah, Rashmi; Torres, Oscar B; Mayorov, Alexander V; Li, Fuying; Antoline, Joshua F G; Jacobson, Arthur E; Rice, Kenner C; Deschamps, Jeffrey R; Beck, Zoltan; Alving, Carl R; Matyas, Gary R

    2015-06-17

    Vaccines against drugs of abuse have induced antibodies in animals that blocked the biological effects of the drug by sequestering the drug in the blood and preventing it from crossing the blood-brain barrier. Drugs of abuse are too small to induce antibodies and, therefore, require conjugation of drug hapten analogs to a carrier protein. The efficacy of these conjugate vaccines depends on several factors including hapten design, coupling strategy, hapten density, carrier protein selection, and vaccine adjuvant. Previously, we have shown that 1 (MorHap), a heroin/morphine hapten, conjugated to tetanus toxoid (TT) and mixed with liposomes containing monophosphoryl lipid A [L(MPLA)] as adjuvant, partially blocked the antinociceptive effects of heroin in mice. Herein, we extended those findings, demonstrating greatly improved vaccine induced antinociceptive effects up to 3% mean maximal potential effect (%MPE). This was obtained by evaluating the effects of vaccine efficacy of hapten 1 vaccine conjugates with varying hapten densities using two different commonly used carrier proteins, TT and cross-reactive material 197 (CRM197). Immunization of mice with these conjugates mixed with L(MPLA) induced very high anti-1 IgG peak levels of 400-1500 μg/mL that bound to both heroin and its metabolites, 6-acetylmorphine and morphine. Except for the lowest hapten density for each carrier, the antibody titers and affinity were independent of hapten density. The TT carrier based vaccines induced long-lived inhibition of heroin-induced antinociception that correlated with increasing hapten density. The best formulation contained TT with the highest hapten density of ≥30 haptens/TT molecule and induced %MPE of approximately 3% after heroin challenge. In contrast, the best formulation using CRM197 was with intermediate 1 densities (10-15 haptens/CRM197 molecule), but the %MPE was approximately 13%. In addition, the chemical synthesis of 1, the optimization of the conjugation

  8. Tuning superior solar cell performance of carrier mobility and absorption in perovskite CH3NH3GeCl3: A density functional calculations

    Science.gov (United States)

    Zhao, Yu-Qing; Wu, Li-Juan; Liu, Biao; Wang, Ling-Zhi; He, Peng-Bin; Cai, Meng-Qiu

    2016-05-01

    The solar cell based on hybrid organic-inorganic halide perovskite has received considerable attention. One of the most important issues in the pursuit of further developments in this area is to obtain both a high carrier mobility and an excellent ability of light adsorption. In this paper, we investigate the electronic structure and electronic effective masses of the new non-toxic material CH3NH3GeCl3 by first-principle calculations. The results show that the absorption efficiency of CH3NH3GeCl3 is more superior to that of CH3NH3PbI3 in short wavelength region. We trace this result to the ferroelectricity caused by the more serious octahedral GeCl6- distortion. We also discover a new relationship between the carrier effective masses anisotropy and the anisotropy of electronic density of states along three principal directions. Moreover, while applied the isotropic compressive pressure, the absorption efficiency and carrier mobility of CH3NH3GeCl3 in orthorhombic phase are improved greatly due to changes of electronic structure. We speculate that these are general results of tuning of the carrier mobility by controlling the band gap and the electronic occupation along different directions, to obtain both a high carrier mobility and an excellent ability of light adsorption.

  9. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  10. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

    Science.gov (United States)

    Nazir, Safdar; Bernal, Camille; Yang, Kesong

    2015-03-11

    The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals. PMID:25688656

  11. Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

    OpenAIRE

    Tchoulfian, Pierre; Donatini, Fabrice; Levy, François; Amstatt, Benoît; Dussaigne, Amélie; Ferret, Pierre; Bustarret, Etienne; Pernot, Julien

    2013-01-01

    Combined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches, similar carrier concentration and mobility were determined taking into account the non-parabolicity of the conduction band. The unique high conductivity of Si-doped GaN wires is explained by a mobility µ=56 cm2 /V s at a carrier concentration n = 2.6 10^20 /cm 3. This is attributed to a more efficient dopant incorporation in Si-doped GaN mi...

  12. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shimosako, N., E-mail: n-shimosako@sophia.jp; Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Ema, K. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

    2015-11-07

    We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

  13. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Wei, S. H.; Ma, J.; Gessert, T. A.; Chin, K. K.

    2011-07-01

    Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae to calculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which VCd, CuCd, and Cui are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poor p-type again, in good agreement with experimental observation of CdTe-based solar cells.

  14. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111

    Directory of Open Access Journals (Sweden)

    J. Hennig

    2015-07-01

    Full Text Available We report on GaN based field-effect transistor (FET structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm. In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  15. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    International Nuclear Information System (INIS)

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents

  16. The temperature anomalies of the YBa2Cu3O6.9 charge carriers density from 290 K to Tc

    International Nuclear Information System (INIS)

    A possibility of HTSC electronic properties investigating by means of measuring the electrical resistance rC of HTSC/normal metal interface is grounded. An existence of the correlations between anomalies of rC and anomalies of density nf of HTSC charge carriers is shown. The correlations between the anomalies of dependence rC(T) for interface YBa2Cu3O6.9/In and anomalies of temperature dependences of YBa2Cu3O6.9 lattice cell parameters b and c are demonstrated. The conclusion is made that the reason of anomalies rC at T>>TC is pairing the hole charge carriers of YBa2Cu3O6.9 to positive bosons. Sharp and deep rC-anomaly before n-s-transition correlates to well-known sign-reversal effect of Hall coefficient. It is explained by bosons disintegration and posterior intensive conversion of hole carriers to electrons

  17. The effect of doping density and injection level on minority-carrier lifetime as applied to bifacial dendritic web silicon solar cells

    Science.gov (United States)

    Meier, Daniel L.; Hwang, Jeong-Mo; Campbell, Robert B.

    1988-01-01

    The decrease of minority-carrier lifetime with resistivity and with illumination level in bifacial dendritic web silicon solar cells is addressed. This variation of lifetime is shown to be consistent with the presence of a distribution of defect levels in the bandgap that arise from extended defects in the we material. The extended defects are precipitates, recently shown to be oxide precipitates, that decorate dislocation cores. It follows that the sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority-carrier band edge. Good agreement is obtained between calculated and measured values of short-circuit current and quantum efficiency for bifacial cells covering a range of doping density and illumination level, with illumination from either back or front of the cell. The implications of this approach extend to concentrator cells and to other devices in which minority-carrier lifetime is an important parameter. This includes devices made using Czochralski-grown silicon, where oxygen and oxide precipitates likewise play an important role in determining lifetime.

  18. A quantitative discussion on band-gap energy and carrier density of CdO in terms of temperature and oxygen partial pressure

    International Nuclear Information System (INIS)

    Calculations relative to the band-gap energy shift and carrier spatial density in cadmium oxide are performed in terms of the oxygen partial pressure and substrate temperature relative to the deposition process in the crystal growth of the above material, starting from the consideration of the Fermi energy of an exciton gas. In particular, the band-gap shift experienced by cadmium oxide in terms of the corresponding partial pressure of oxygen is considered as well as the electron spatial density as a function of the pressure in question. Influence of temperature is discussed by estimating the average rate of variation of the band-gap shift versus temperature. In addition, the sensitivity of the above-mentioned shift to temperature is studied by means of a suitable parameter

  19. Correlation between Curie temperature and carrier density of electron-doped EuO - is there an intrinsic limit on TC

    International Nuclear Information System (INIS)

    The ferromagnetic semiconductor europium oxide exhibits a multitude of giant properties, such as metal-to-insulator transitions, a colossal magneto-resistance, and very pronounced magneto-optic effects. The recently demonstrated spin-polarization of >90 % in the ferromagnetic state and its excellent electronic compatibility with Si make it an interesting candidate for semiconductor based spintronics. Nevertheless the low Curie temperature (TC) of 69 K of undoped EuO is a major obstacle for the use of this outstanding material in commercial spintronic applications. By electron doping EuO with donor impurities, TC can substantially be increased exploiting an additional exchange interaction that is mediated via the conduction electrons. Here we report on measurements of TC and the carrier densities by Hall effect on La and Gd doped EuO films grown over a wide range of doping concentrations and growth conditions. The experiments show that only a small fraction of the introduced impurities actually act as donors even for optimized growth parameters. Furthermore we found a strong correlation between Curie temperatures and carrier densities.

  20. Density of states and superconducting critical temperature vs the number of carriers in a triangular lattice under applied pressure

    International Nuclear Information System (INIS)

    We propose a band structure for a triangular lattice with nearest neighbor hopping, in terms of parameters which depend on applied pressure to the sample. Such a lattice is a representation of the compound, NaxCoO2· yH2O (Sodium Cobalt Oxyhydrate), which is superconducting at a critical temperature of Tc approx. 5 K. We calculate the density of states, N(ω) vs ω, for several values of the parameters which depend on pressure, distorting in this way the geometry of the lattice. We observe the frequency dependence of the density of states for the different parameters. For zero pressure, we have obtained a density of states which is not symmetric around ω = 0 and which is a different result with respect to a square lattice in 2-D. We also study the superconducting critical temperature, Tc, as a function of the chemical potential, μ. Tc and μ are calculated from two self.consistent BCS equations. As a natural result, we have studied the effect of pressure on Tc, relating the different van Hove singularities, which appear in the density of states, with the different Tc,max's. We then prove that ns mv, where ns is the number of logarithmic singularities and mv is the number of Tc,max's. We compare our results with relevant results in the literature. (author)

  1. Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

    Institute of Scientific and Technical Information of China (English)

    Ken K. Chin

    2011-01-01

    For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated,that have multiple transition energy levels among charge states,the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density.A graphical method is used to illustrate the solution of the problem.Relations among the transition energy levels of the multi-level defect are derived using the graphical method.Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work.

  2. The use of inert carriers in regulatory biodegradation tests of low density poorly water-soluble substances.

    Science.gov (United States)

    Handley, J W; Mead, C; Rausina, G A; Waid, L J; Gee, J C; Herron, S J

    2002-08-01

    Many poorly water-soluble compounds fail regulatory ready biodegradation tests as the method of test material preparation limits the bioavailability of the chemical. The recognised method for delivery of poorly soluble materials into biodegradability tests consists of coating test material inside the test vessel or onto inert substrates (i.e., glass cover slide, boiling beads, filter paper, or Teflon stir bar) that are placed inside the vessels. Volatile solvents are often used to augment this process. Although these substrates work fairly well for delivering many poorly soluble materials into biodegradability tests, they have not been effective in keeping low density, poorly water-soluble substances in the test medium. Soon after medium is added to the test vessels, these chemicals break loose from the substrates and float on the surface where they have limited contact with micro-organisms in the test medium. Hence, there is a reduced potential for measuring substantial biodegradability in the test. This paper describes the work undertaken to establish a standard method of adding low density, poorly water-soluble substances into test vessels of biodegradability studies to ensure these materials remain in contact with micro-organisms in the test medium. The substances are prepared for testing by adsorption onto silica gel followed by dispersion into the culture medium. This method of delivery may provide greater intra- and inter-laboratory consistency in biodegradability test results for low density, poorly water-soluble substances and it may more closely mimic the probable transport and fate of these substances in the environment. PMID:12146631

  3. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Qfix) and the effective lifetimes (τeff) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τeff than standard undoped layers. In contrast, B-doped layers exhibit lower τeff. A strong Qfix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  4. Carrier dynamics analysis for efficiency droop in GaN-based light-emitting diodes with different defect densities using time-resolved electroluminescence

    International Nuclear Information System (INIS)

    We developed a direct experimental approach for investigating the correlation between efficiency droop and recombination rate variation under current injection conditions by using time-resolved electroluminescence (EL) technique. We applied this approach to understand the droop phenomenon of GaN-based light-emitting diodes grown on patterned sapphire substrates (LED-on-PAT) and planar sapphire substrates (LED-on-PLA). Because of lower dislocation density and current leakage in LED-on-PAT compared to LED-on-PLA, it was found that the effective carrier density injected into quantum wells (QWs) in LED-on-PAT was higher than that of the LED-on-PLA under the same current injection conditions, based on the analysis of spectral broadening of EL spectra with varying current injection and photoluminescence experiments under resonant and non-resonant excitation conditions. The efficiency droop in LED-on-PAT was found to be much more severe than that of LED-on-PLA, despite the higher overall quantum efficiency of LED-on-PAT. From the time-resolved EL analysis, we could separate radiative and non-radiative recombination contributions and directly observe (i) the decrease and saturation of radiative recombination time and (ii) the increase and following decrease in behavior of non-radiative recombination time with increasing current injection level, showing a strong correlation between efficiency droop and recombination rate variation. (paper)

  5. Carrier dynamics analysis for efficiency droop in GaN-based light-emitting diodes with different defect densities using time-resolved electroluminescence

    Science.gov (United States)

    Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

    2016-03-01

    We developed a direct experimental approach for investigating the correlation between efficiency droop and recombination rate variation under current injection conditions by using time-resolved electroluminescence (EL) technique. We applied this approach to understand the droop phenomenon of GaN-based light-emitting diodes grown on patterned sapphire substrates (LED-on-PAT) and planar sapphire substrates (LED-on-PLA). Because of lower dislocation density and current leakage in LED-on-PAT compared to LED-on-PLA, it was found that the effective carrier density injected into quantum wells (QWs) in LED-on-PAT was higher than that of the LED-on-PLA under the same current injection conditions, based on the analysis of spectral broadening of EL spectra with varying current injection and photoluminescence experiments under resonant and non-resonant excitation conditions. The efficiency droop in LED-on-PAT was found to be much more severe than that of LED-on-PLA, despite the higher overall quantum efficiency of LED-on-PAT. From the time-resolved EL analysis, we could separate radiative and non-radiative recombination contributions and directly observe (i) the decrease and saturation of radiative recombination time and (ii) the increase and following decrease in behavior of non-radiative recombination time with increasing current injection level, showing a strong correlation between efficiency droop and recombination rate variation.

  6. Radionuclide carriers

    International Nuclear Information System (INIS)

    A new carrier for radionuclide technetium 99m has been prepared for scintiscanning purposes. The new preparate consists of physiologically acceptable water-insoluble Tcsup(99m)-carrier containing from 0.2 to 0.8 weight percent of stannic ion as reductor, bound to an anionic starch derivative with about 1-20% of phosphate substituents. (EG)

  7. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    the majority of its foreign trade, as well as its oil imports, upon which the country is totally dependent. China therefore has good reasons for acquiring an aircraft carrier to enable it to protect its national interests. An aircraft carrier would also be a prominent symbol of China’s future status...... information is pieced together, then a picture is created of a Chinese aircraft carrier program, where Varyag will be made operational for training purposes. With this as the model, China will build a similar sized carrier themselves. If this project does become a reality, then it will take many years for...... Kuznetsov carrier. The SU-33 is, in its modernized version, technologically at the same level as western combat aircraft in both the offensive as well as the defensive roles. But Russia and China currently have an arms trade 6 dispute that is likely to prevent a deal, unless the dispute is resolved. As an...

  8. Application of helicon waves for contracthes local testing of homogeneity of certain narrow-band semiconductors according to density and mobility of free charge carriers

    International Nuclear Information System (INIS)

    Application of practically the single contactless local method today for determination of concentration and charge carrier mobility in narrow-band semiconductors of the CdxHg1-xTe(x∼0.2) type using helicons-circulating polarized electromagnetic waves propagating in the magnetized plasma of free charge carriers along the external magnetic field, is described. An installation for local testing of concentration and charge carrier mobility in narrow-band semiconductors is constructed and it has been used to study homogeneity of ternary CdxHg1-xTe solid solution samples of the n-type of conductivity at 77 K. This installation is shown to allow to carry out contactless expressive measurements of electrical properties of CdxHg1-xTe of n-type conductivity of high accuracy and locality, that gives the possibility to use it for testing material prepared in industry

  9. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  10. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    as a great power in Asia and will balance the carrier acquisitions of the United States, the United Kingdom, Russia and India. China’s current military strategy is predominantly defensive, its offensive elements being mainly focused on Taiwan. If China decides to acquire a large carrier with...... offensive capabilities, then the country will also acquire the capability to project military power into the region beyond Taiwan, which it does not possess today. In this way, China will have the military capability to permit a change of strategy from the mainly defensive, mainland, Taiwan-based strategy...... to a more assertive strategy, with potentially far-reaching consequences for the countries of the region. The Chinese have bought several retired carriers, which they have studied in great detail. The largest is the Russian-built carrier Varyag of the Kuznetsov class, which today is anchored in the...

  11. Sheet carrier density dependent Rashba spin splitting in the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well

    International Nuclear Information System (INIS)

    The Rashba coefficient and Rashba spin splitting for the first subband of the Al0.5Ga0.5N/GaN/Al0.5Ga0.5N quantum well (QW) with various sheet carrier densities (Ns) are calculated by solving Schrödinger and Poisson equations self-consistently. The Rashba spin splitting for the first subband at the Fermi level is considerable and increases evidently with Ns, since the Rashba coefficient, especially the Fermi wave vector increase rapidly. With increasing Ns, the peak of the wave function for the first subband moves towards the left heterointerface, and the average electric field in the well increases, so the two dominant contributions coming from the well and the heterointerface increase. Therefore, the strong polarization electric field and high density of 2DEG in III-nitrides heterostructures are of great importance to α and make the Rashba spin splitting in AlGaN/GaN QWs comparable to that of narrow-gap III–V materials. The results indicate that the sheet carrier density is an important parameter affecting the Rashba coefficient and Rashba spin splitting in AlGaN/GaN QWs, showing the possible application of this material system in spintronic devices. (semiconductor physics)

  12. 17O nuclear-magnetic-resonance evidence for distinct carrier densities in the two types of CuO2 planes of (Bi,Pb)2Sr2Ca2Cu3Oy

    International Nuclear Information System (INIS)

    A study of 17O NMR spectra in the normal phase of 17O-enriched powder samples of (Bi,Pb)2Sr2Ca2Cu3Oy (2:2:2:3 phase) has allowed us to distinguish the NMR lines of the CuO2 planes having respectively pyramidal and square coordination for copper. The observed differences in the magnitude and temperature dependence of the 17O Knight shift of the two types of planes are consistent with the occurrence of stronger electron correlations, or smaller carrier density, in the plane-square coordinated planes, in accordance with recent theoretical predictions

  13. Preconception Carrier Screening

    Science.gov (United States)

    ... Events Advocacy For Patients About ACOG Preconception Carrier Screening Home For Patients Search FAQs Preconception Carrier Screening ... Screening FAQ179, August 2012 PDF Format Preconception Carrier Screening Pregnancy What is preconception carrier screening? What is ...

  14. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    International Nuclear Information System (INIS)

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects

  15. What Is Carrier Screening?

    Science.gov (United States)

    ... you want to learn. Search form Search Carrier screening You are here Home Testing & Services Testing for ... help you make the decision. What Is Carrier Screening? Carrier screening checks if a person is a " ...

  16. Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure

    Science.gov (United States)

    Dimmock, James A. R.; Kauer, Matthias; Smith, Katherine; Liu, Huiyun; Stavrinou, Paul N.; Ekins-Daukes, Nicholas J.

    2016-07-01

    A hot carrier photovoltaic cell requires extraction of electrons on a timescale faster than they can lose energy to the lattice. We optically and optoelectronically characterize two resonant tunneling structures, showing their compatability with hot carrier photovoltaic operation, demonstrating structural and carrier extraction properties necessary for such a device. In particular we use time resolved and temperature dependent photoluminescence to determine extraction timescales and energy levels in the structures and demonstrate fast carrier extraction by tunneling. We also show that such devices are capable of extracting photo-generated electrons at high carrier densities, with an open circuit voltage in excess of 1 V.

  17. Enhanced spin–orbit coupling and charge carrier density suppression in LaAl1−xCrxO3/SrTiO3 hetero-interfaces

    International Nuclear Information System (INIS)

    We report a gradual suppression of the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface on substitution of chromium at the Al sites. The sheet carrier density at the interface (n□) drops monotonically from ∼2.2 × 1014 cm−2 to ∼2.5 × 1013 cm−2 on replacing ≈60% of the Al sites by Cr and the sheet resistance (R□) exceeds the quantum limit for localization (h/2e2) in the concentrating range 40–60% of Cr. The samples with Cr ⩽40% show a distinct minimum (Tm) in metallic R□(T) whose position shifts to higher temperatures on increasing the substitution. Distinct signatures of Rashba spin–orbit interaction (SOI) induced magnetoresistance (MR) are seen in R□ measured in out of plane field (H⊥) geometry at T ⩽ 8 K. Analysis of these data in the framework of Maekawa–Fukuyama theory allows extraction of the SOI critical field (HSO) and time scale (τSO) whose evolution with Cr concentration is similar as with the increasing negative gate voltage in LAO/STO interface. The MR in the temperature range 8 K ⩽ T ⩽ Tm is quadratic in the field with a +ve sign for H⊥ and −ve sign for H∥. The behaviour of H∥ MR is consistent with Kondo theory which in the present case is renormalized by the strong Rashba SOI at T < 8 K. (paper)

  18. Peptide-Carrier Conjugation

    DEFF Research Database (Denmark)

    Hansen, Paul Robert

    To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined.......To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....

  19. Asymmetric Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Rasmussen, Peter Omand;

    2010-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on the measurements, it is shown that the spread effect of the discrete components from the motor current spectra is very effective independent of the modulation...

  20. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  1. Computer assisted analysis of hand radiographs in infantile hypophosphatasia carriers

    International Nuclear Information System (INIS)

    Hand radiographs of 49 carriers of infantile hypophosphatasia and 67 non-carriers were evaluated using two Apple IIe Computer Programs and Apple Graphics Tablet. CAMPS was used to determine the bone lengths and calculate the metacarpophalangeal profiles. A newly developed program (ADAM) was used to determine bone density based on percent cortical area of the second metacarpal. Carriers of infantile hypophosphatasia had significantly less dense bones. (orig.)

  2. Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

    Directory of Open Access Journals (Sweden)

    M. Khaledian

    2014-01-01

    schematic perfect scroll-like Archimedes spiral. The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.

  3. Duchenne muscular dystrophy carriers

    International Nuclear Information System (INIS)

    By means of magnetic resonance imaging (MRI), the proton spin-lattice relaxation times (T1 values) of the skeletal muscles were measured in Duchenne muscular dystrophy (DMD) carriers and normal controls. The bound water fraction (BWF) was calculated from the T1 values obtained, according to the fast proton diffusion model. In the DMD carriers, T1 values of the gluteus maximus and quadriceps femoris muscles were significantly higher, and BWFs of these muscles were significantly lower than in normal control. Degenerative muscular changes accompanied by interstitial edema were presumed responsible for this abnormality. No correlation was observed between the muscle T1 and serum creatine kinase values. The present study showed that MRI could be a useful method for studying the dynamic state of water in both normal and pathological skeletal muscles. Its possible utility for DMD carrier detection was discussed briefly. (orig.)

  4. Carrier localization in gallium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wetzel, C. [Lawrence Berkeley National Lab., CA (United States)][California Univ., Berkeley, CA (United States); Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States); Haller, E.E. [Lawrence Berkeley National Lab., CA (United States)][California Univ., Berkeley, CA (United States)] [and others

    1996-09-01

    In wide bandgap GaN, a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 10{sup 19} to 10{sup 20} cm{sup - 3} in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models, a nitrogen vacancy acts as a donor but its formation energy is very large in n-type materials, making this suggestion controversial. We have investigated the nature of this yet unidentified donor at large hydrostatic pressure. Results from infrared reflection and Raman scattering indicate strong evidence for localization of free carriers by large pressures. The carrier density is drastically decreased by two orders of magnitude between 20 and 30 GPa. Several techniques provide independent evidence for results in earlier reports and present the first quantitative analysis. A possible interpretation of this effect in terms of the resonant donor level is presented.

  5. Does carrier size matter? A fundamental study of drug aerosolisation from carrier based dry powder inhalation systems.

    Science.gov (United States)

    Ooi, Jesslynn; Traini, Daniela; Hoe, Susan; Wong, William; Young, Paul M

    2011-07-15

    There is plenty of evidence supporting the notion that the size of the carrier influences the aerosolisation performance of drug from a drug-carrier blend. Interestingly, that evidence is contradictory in places and the study of such mechanisms is fraught by the compounding variables associated with comparing crystalline powders (e.g. as size is varied so may the shape, surface chemistry, roughness and the amount of fine excipients). To overcome these limitations, a series of model polystyrene spheres were used to study the influence of size on aerosol performance. Three polystyrene sphere carriers (TS-80, TS-250 and TS-500, describing their approximate diameters) were characterised using laser diffraction, atomic force microscopy, colloid probe microscopy, electron microscopy, true density and dynamic vapour sorption. The model carriers were blended with micronized salbutamol sulphate (67.5:1 ratios) and the aerosolisation performance was tested using a multistage liquid impinger at a range of flow rates (40-100 lmin(-1)). Physico-chemical analysis of the carriers indicated that all carriers were spherical with similar roughness and densities. Furthermore, the adhesion force of drug to the carrier surfaces was independent of carrier size. Significant differences in drug aerosolisation were observed with both flow rate and carrier size. In general, as carrier size was increased, aerosol performance decreased. Furthermore, as flow rate was increased so did performance. Such observations suggest that higher energy processes drive aerosolisation, however this is likely to be due to the number of impaction events (and associated frictional and rotational forces) rather than the actual collision velocity (since the larger carriers had increased momentum and drag forces). This study shows that, in isolation of other variables, as carrier size increases, a concurrent decrease in drug aerosolisation performance is observed. PMID:21501674

  6. Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

    International Nuclear Information System (INIS)

    Proton irradiation effects in CuInSe2 (CIS) thin films have been investigated as a function of proton energy (0.38, 1 and 3 MeV). Single crystalline n-CIS thin films were prepared by radio frequency sputtering. The electrical properties of as-grown and irradiated samples were measured. The typical electron concentration and Hall mobility in as-grown samples were 4 x 1016 cm-3 and 120 cm2/Vs, respectively. After 0.38 and 1MeV proton irradiation, both of the electron concentration and Hall mobility were decreased as the fluence exceeded 1 x 1013 cm-2, but for 3 MeV proton irradiation, they were decreased over the fluence of 1 x 1014 cm-2. The damage by high-energy proton irradiation was lower than that by low-energy proton irradiation. The carrier removal rate with proton fluence was estimated about from 1800 to 300 cm-1as proton energy was changed from 0.38 to 3 MeV. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Intestinal solute carriers

    DEFF Research Database (Denmark)

    Steffansen, Bente; Nielsen, Carsten Uhd; Brodin, Birger; Eriksson, André Huss; Andersen, Rikke; Frokjaer, Sven

    2004-01-01

    A large amount of absorptive intestinal membrane transporters play an important part in absorption and distribution of several nutrients, drugs and prodrugs. The present paper gives a general overview on intestinal solute carriers as well as on trends and strategies for targeting drugs and...

  8. Glycosylation of solute carriers

    DEFF Research Database (Denmark)

    Pedersen, Nis Borbye; Carlsson, Michael C; Pedersen, Stine Helene Falsig

    2016-01-01

    Solute carriers (SLCs) are one of the largest groups of multi-spanning membrane proteins in mammals and include ubiquitously expressed proteins as well as proteins with highly restricted tissue expression. A vast number of studies have addressed the function and organization of SLCs as well as...

  9. Information and Its Carriers.

    Science.gov (United States)

    Herrmann, F.; And Others

    1985-01-01

    Describes: (1) the structure of a data transmission source, carrier, and receiver; (2) a quantitative measure for the amount of data, followed by some quantitative examples of data transmission processes; (3) the concept of data current; (4) data containers; and (5) how this information can be used to structure physics courses. (JN)

  10. Influence of quasi-bound states on the carrier capture into quantum dots

    DEFF Research Database (Denmark)

    Magnúsdóttir, Ingibjörg; Uskov, A.; Bischoff, Svend; Tromborg, Bjarne; Mørk, Jesper; Ferreira, R.; Bastard, G.

    2002-01-01

    An important characteristic of quantum dot (QD) materials is the timescale on which carriers are captured into the dots and relax to their ground state. The properties of devices based on QDs, such as lasers, thus rely on efficient carrier feeding to the active QD states. These processes are...... believed to be mediated by carrier-phonon and carrier-carrier interaction (Auger processes). In systems of higher dimensionality, carrier relaxation via emission of LO (Longitudinal Optical) phonons is dominant. However, due to the discrete QD density of states, this process is often considered impossible...

  11. Screening-induced carrier transport in silicene

    International Nuclear Information System (INIS)

    Based on the Boltzmann transport equation in the MRT approximation, we present a theory to investigate low-field carrier transport in dual-gated silicene FETs by taking into account screened charged impurity scattering, which is the most likely scattering mechanism limiting the conductivity. Static RPA dielectric screening is also included in the conductivity calculation to study temperature-dependent silicene transport. It is found that both calculated conductivity and band gap not only depend strongly on carrier sheet density, but also depend strongly on effective offset density. More importantly, screening-induced metal-insulator-transition phenomena in buckled silicene can be observed theoretically, which is similar to that obtained in monolayer graphene. (paper)

  12. Heat to electricity conversion by cold carrier emissive energy harvesters

    International Nuclear Information System (INIS)

    This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved

  13. Heat to electricity conversion by cold carrier emissive energy harvesters

    Science.gov (United States)

    Strandberg, Rune

    2015-12-01

    This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved.

  14. Heat to electricity conversion by cold carrier emissive energy harvesters

    Energy Technology Data Exchange (ETDEWEB)

    Strandberg, Rune [Department of Engineering Sciences, University of Agder, Jon Lilletuns vei 9, 4879 Grimstad (Norway)

    2015-12-07

    This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved.

  15. Hungarian students’ carrier aspirations

    Directory of Open Access Journals (Sweden)

    A.S. Gubik

    2014-06-01

    Full Text Available The article analyzes the students’ carrier aspiration, right after their graduation and five years after their studies. It examines the differences arising from the students’ family business background and their most important social variables (gender, age. Then the study highlights the effects of study field on the students’ intention. The direct effect of education on starting an enterprise is undiscovered in the literature, the paper deals with the influence of availability and services use, offered by higher institutions.

  16. Comparison of human solute carriers

    OpenAIRE

    Schlessinger, Avner; Matsson, Pär; Shima, James E.; Pieper, Ursula; Yee, Sook Wah; Kelly, Libusha; Apeltsin, Leonard; Stroud, Robert M.; Ferrin, Thomas E; Giacomini, Kathleen M.; Sali, Andrej

    2010-01-01

    Solute carriers are eukaryotic membrane proteins that control the uptake and efflux of solutes, including essential cellular compounds, environmental toxins, and therapeutic drugs. Solute carriers can share similar structural features despite weak sequence similarities. Identification of sequence relationships among solute carriers is needed to enhance our ability to model individual carriers and to elucidate the molecular mechanisms of their substrate specificity and transport. Here, we desc...

  17. Carrier transport uphill. I. General

    DEFF Research Database (Denmark)

    Rosenberg, T; Wilbrandt, W

    1963-01-01

    A quantitative treatment of a carrier pump operating with two carrier forms C and Z is presented. Asymmetric metabolic reactions are assumed to transform Z into C on one and C into Z on the other side of the membrane, establishing a carrier cycle. The kinetical consequences of this mechanism are...

  18. Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

    DEFF Research Database (Denmark)

    Yu, Ping; Hvam, Jørn Märcher; Wong, K. S.;

    1999-01-01

    Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a...... transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma....

  19. Experimental and ab initio ultrafast carrier dynamics in plasmonic nanoparticles

    CERN Document Server

    Brown, Ana M; Narang, Prineha; Schwartzberg, Adam M; Goddard, William A; Atwater, Harry A

    2016-01-01

    Ultrafast pump-probe measurements of plasmonic nanostructures probe the non-equilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of any fitting parameters. We account for detailed electronic-structure effects in the density of states, excited carrier distributions, electron-phonon coupling, and dielectric functions which allow us to avoid effective electron temperature approximations. Using this calculation method, we obtain excellent quantitative agreement with spectral and temporal features in transient-absorption measurements. In both our experiments and calculations, we identify the two major contributions of the initial response with distinct signatures: short-lived highly non-thermal excited carriers and longer-lived thermalizing carriers.

  20. Charge carrier coherence and Hall effect in organic semiconductors.

    Science.gov (United States)

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  1. Fundamental limitations of hot-carrier solar cells

    Science.gov (United States)

    Kirk, A. P.; Fischetti, M. V.

    2012-10-01

    Sunlight-generated hot-carrier transport in strongly absorbing direct band-gap GaAs—among the most optimal of semiconductors for high-efficiency solar cells—is simulated with an accurate full-band structure self-consistent Monte Carlo method, including short- and long-range Coulomb interaction, impact ionization, and optical and acoustic phonon scattering. We consider an ultrapure 100-nm-thick intrinsic GaAs absorber layer designed with quasiballistic carrier transport that achieves complete photon absorption down to the band edge by application of careful light trapping and that has a generous hot-carrier retention time of 10 ps prior to the onset of carrier relaxation. We find that hot-carrier solar cells can be severely limited in performance due to the substantially reduced current density caused by insufficient extraction of the widely distributed hot electrons (holes) through the requisite energy selective contacts.

  2. Charge carrier coherence and Hall effect in organic semiconductors

    Science.gov (United States)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  3. Unified description of charge-carrier mobilities in disordered semiconducting polymers

    NARCIS (Netherlands)

    Pasveer, WF; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, PA; Blom, PWM; de Leeuw, DM; Michels, MAJ

    2005-01-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in d

  4. Maintainable substrate carrier for electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chen-An; Abas, Emmanuel Chua; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor; Ma, Diana Xiaobing

    2016-08-02

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

  5. Ultrafast carrier dynamics in tetrahedral amorphous carbon: carrier trapping versus electron-hole recombination

    International Nuclear Information System (INIS)

    We report the investigation of the ultrafast carrier dynamics in thin tetrahedral amorphous carbon films by means of femtosecond time-resolved reflectivity. We estimated the electron-phonon relaxation time of a few hundred femtoseconds and we observed that under low optical excitation photo-generated carriers decay according to two distinct mechanisms attributed to trapping by defect states and direct electron-hole recombination. With high excitation, when photo-carrier and trap densities are comparable, a unique temporal evolution develops, as the time dependence of the trapping process becomes degenerate with the electron-hole recombination. This experimental evidence highlights the role of defects in the ultrafast electronic dynamics and is not specific to this particular form of carbon, but has general validity for amorphous and disordered semiconductors

  6. HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT

    OpenAIRE

    Przyrembel, G.; Mahnkopf, R.; Wagemann, H.

    1988-01-01

    The influence of synchrotron-light irradiation for p- and n-channel MOSFET's on their sensitivity to hot carrier degradation was investigated. The radiation induces additional interface states and a positive oxide charge. Annealing at 450°C reduces the interface state density to its initial value but not the oxide charge. A hot carrier stress can compensate this remaining charge by trapping electrons. This effect produces an enhanced shift of the threshold voltage compared to non-irradiated d...

  7. Autonomous component carrier selection

    DEFF Research Database (Denmark)

    Garcia, Luis Guilherme Uzeda; Pedersen, Klaus; Mogensen, Preben

    2009-01-01

    in local areas, basing our study case on LTE-Advanced. We present extensive network simulation results to demonstrate that a simple and robust interference management scheme, called autonomous component carrier selection allows each cell to select the most attractive frequency configuration; improving...... management and efficient system operation. Due to the expected large number of user-deployed cells, centralized network planning becomes unpractical and new scalable alternatives must be sought. In this article, we propose a fully distributed and scalable solution to the interference management problem...

  8. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  9. Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells

    KAUST Repository

    Melianas, Armantas

    2015-11-05

    In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium.

  10. Carrier-based dry powder inhalation: Impact of carrier modification on capsule filling processability and in vitro aerodynamic performance.

    Science.gov (United States)

    Faulhammer, Eva; Wahl, Verena; Zellnitz, Sarah; Khinast, Johannes G; Paudel, Amrit

    2015-08-01

    This study aims to investigate the effect of carrier characteristics and dosator capsule filling operation on the in vitro deposition of mixtures containing salbutamol sulphate (SS) and lactose and mannitol as model carrier materials. The carrier surfaces of lactose and mannitol were modified via wet decantation. The impact of the decantation process on the properties of carriers was investigated by laser diffraction, density and powder flow measurements, N2 physisorption, small and wide angle X-ray scattering (SWAXS) and scanning electron microscopy (SEM). Differences in carrier type and untreated and decanted materials were identified and the SAXS measurements proved to be a promising technology confirming the successful removal of fines. Adhesive carrier API mixtures with carrier-to-API ratio of 99:1 wt% were prepared, mixture homogeneity was tested and subsequently the mixtures were filled into capsules at different process settings. Finally, the influence of the decantation process on the in vitro performance of the adhesive mixtures was tested with a next generation impactor. For lactose, the decantation decreased the fine particle fraction (FPF) of SS, whereas the FPF of mannitol as a carrier was only affected by the capsule filling process. In summary, the DPI formulation based on untreated lactose, especially by capsule filling using a dosing chamber to powder layer (compression) ratio of 1:2, proved to be superior in terms of the dosing accuracy (RSD<0.8%) and the in vitro aerodynamic performance (FPF of 12%). PMID:26136200

  11. LIQUIFIED NATURAL GAS (LNG CARRIERS

    Directory of Open Access Journals (Sweden)

    Daniel Posavec

    2010-12-01

    Full Text Available Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 LNG carriers currently in operation (the paper is published in Croatian.

  12. Effect of carrier particle shape on dry powder inhaler performance.

    Science.gov (United States)

    Kaialy, Waseem; Alhalaweh, Amjad; Velaga, Sitaram P; Nokhodchi, Ali

    2011-12-12

    The aim of this study was to characterise the aerosolisation properties of salbutamol sulphate (SS) from dry powder inhaler (DPI) formulations containing different carrier products. The difference in the elongation ratio (ER) of the different carriers was highlighted. Different set of carriers, namely commercial mannitol (CM), commercial lactose (CL), cooling crystallised mannitol (CCM), acetone crystallised mannitol (ACM) and ethanol crystallised mannitol (ECM) were used and inspected in terms of size, shape, density, crystal form, flowability, and in vitro aerosolisation performance using Multi Stage Liquid Impinger (MSLI) and Aerolizer inhaler device. Solid-state and morphological characterization showed that CM product was in pure β-form having particles with smaller ER (CM: ER=1.62 ± 0.04) whereas ACM and ECM mannitol particles were in pure α form with higher ER (ACM: ER=4.83 ± 0.18, ECM: ER=5.89 ± 0.19). CCM product crystallised as mixtures of β-form and δ-form and showed the largest variability in terms of particle shape, size, and DPI performance. Linear relationships were established showing that carrier products with higher ER have smaller bulk density (D(b)), smaller tap density (D(t)), higher porosity (P), and poorer flow properties. In vitro aerosolisation assessments showed that the higher the ER of the carrier particles the greater the amounts of SS delivered to lower airway regions indicating enhanced DPI performance. Yet, DPI performance enhancement by increasing carrier ER reached a "limit" as increasing carrier ER from 4.83±0.18 (ACM) to 5.89±0.19 (ECM) did not significantly alter fine particle fraction (FPF) of SS. Also, carrier particles with higher ER were disadvantageous in terms of higher amounts of SS remained in inhaler device (drug loss) and deposited on throat. Linear relationship was established (r(2)=0.87) showing that the higher the carrier ER the lower the drug emission (EM) upon inhalation. Moreover, poorer flowability for

  13. Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors

    Science.gov (United States)

    Steinhoff, A.; Florian, M.; Rösner, M.; Lorke, M.; Wehling, T. O.; Gies, C.; Jahnke, F.

    2016-09-01

    When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding energy. The question arises, whether this directly translates into equivalently faster carrier–carrier Coulomb scattering of excited carriers. Here we show that a combination of ab initio band-structure and many-body theory predicts Coulomb-mediated carrier relaxation on a sub-100 fs time scale for a wide range of excitation densities, which is less than an order of magnitude faster than in quantum wells.

  14. Stacking dependence of carrier transport properties in multilayered black phosphorous.

    Science.gov (United States)

    Sengupta, A; Audiffred, M; Heine, T; Niehaus, T A

    2016-02-24

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green's function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous. PMID:26809017

  15. Two-dimensional double-quantum spectroscopy: peak shapes as a sensitive probe of carrier interactions in quantum wells

    CERN Document Server

    Tollerud, Jonathan O

    2016-01-01

    We identify carrier scattering at densities below which it has previously been observed in semiconductor quantum wells. These effects are evident in the peakshapes of 2D double-quantum spectra, which change as a function of excitation density. At high excitation densities ($\\geq 10^{9}$ carriers/,cm$^{-2}$) we observe untilted peaks similar to those reported in previous experiments. At low excitation densities (<$10^{8}$ carriers cm$^{-2}$) we observe narrower, tilted peaks. Using a simple simulation, we show that tilted peak-shapes are expected in double-quantum spectra when inhomogeneous broadening is much larger than homogeneous broadening, and that fast pure-decoherence of the double-quantum coherence can obscure this peak tilt. These results show that carrier interactions are important at lower densities than previously expected, and that the `natural' double-quantum peakshapes are hidden by carrier interactions at the excitation densities typically used. Furthermore, these results demonstrate that an...

  16. 载气对炭/炭复合材料沉积速率、体密度和微观结构的影响%Effect of carrier gases on densification rate, bulk density and microstructure of carbon/carbon composites

    Institute of Scientific and Technical Information of China (English)

    侯振华; 郝名扬; 罗瑞盈; 向巧; 杨威; 商海东; 许怀哲

    2015-01-01

    分别采用H2和CO2作为载气,CH4为前躯体,通过等温化学气相渗积制备炭/炭复合材料,通过偏光显微镜、拉曼光谱、X射线衍射和透射电镜对材料微观结构表征以及渗积过程密度变化,研究载气对沉积速率、体密度和微观结构的影响规律。结果表明:在渗积前50 h,CH4-H2体系的沉积速率明显大于CH4-CO2体系,但在其余渗积时间里,CH4-H2体系的沉积速率小于CH4-CO2体系。当载气从H2变成CO2时,复合材料的体密度从1.626 g/cm3增加到1.723 g/cm3,最大径向密度梯度从0.074 g/cm3减小到0.056 g/cm3。同时,基体炭从纯的粗糙体炭转变为杂化粗糙体炭含有过度生长锥,且平均石墨化度从62.7%下降到50.8%。这些显著的变化是由于CO2的氧化作用降低了表面沉积速率,却没有降低孔内沉积速率,同时大量的缺陷形成于层状石墨烯结构中导致形成过度生长锥,降低了热解炭织构。%Effect of carrier gases( H2 and CO2 ) on the densification rate, bulk density and microstructure of carbon/carbon com-posites fabricated by isothermalchemical vapor infiltration from methane ( CH4 ) was investigated. In the initial 50 h, the densifica-tion rate obtained from CH4-H2 is obviously higher than that from CH4-CO2 , while the densification rate from CH4-H2 is lower than that from CH4-CO2 with a further increase of infiltration time. When the carrier gas is switched from H2 to CO2 , the average bulk density of the compositeincreases from 1. 626 to 1. 723 g/cm3 , the maximum radial density gradient decreases from 0. 074 to 0. 056 g/cm3 , the matrix changes from the pure rough laminar to hybrid rough laminar pyrocarbon with overgrowth cones, and the average degree of graphitization reduces from 62. 7% to 50. 8%. These significant changes are caused by the fact that CO2 can ef-fectively reduce the surface deposition rate but does not inhibit the in-pore infiltration, and thatdefects are formed in the deposits by a

  17. Ab InitioStudy of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon

    OpenAIRE

    Bernardi, Marco; Vigil-Fowler, Derek; Lischner, Johannes; Neaton, Jeffrey B.; Louie, Steven G.

    2014-01-01

    Hot carrier thermalization is a major source of efficiency loss in solar cells. Because of the subpicosecond time scale and complex physics involved, a microscopic characterization of hot carriers is challenging even for the simplest materials. We develop and apply an ab initio approach based on density functional theory and many-body perturbation theory to investigate hot carriers in semiconductors. Our calculations include electron-electron and electron-phonon interactions, and require no e...

  18. Carrier transport uphill. I. General

    DEFF Research Database (Denmark)

    Rosenberg, T; Wilbrandt, W

    1963-01-01

    A quantitative treatment of a carrier pump operating with two carrier forms C and Z is presented. Asymmetric metabolic reactions are assumed to transform Z into C on one and C into Z on the other side of the membrane, establishing a carrier cycle. The kinetical consequences of this mechanism are...... worked out with respect to net transport rate, initial rate, unidirectional fluxes including back-flow through the pump, maximum accumulation ratio, competitive inhibition and acceleration, counter transport, and metabolic poisoning. The energetics of the system are treated. The fact that the system...

  19. Basic Stand Alone Carrier Line Items PUF

    Data.gov (United States)

    U.S. Department of Health & Human Services — This release contains the Basic Stand Alone (BSA) Carrier Line Items Public Use Files (PUF) with information from Medicare Carrier claims. The CMS BSA Carrier Line...

  20. Motor carrier evaluation program plan

    International Nuclear Information System (INIS)

    The US Department of Energy (DOE) Transportation Management Program (TMP) has established a program to assist the DOE field offices and their contractors in evaluating the motor carriers used to transport DOE-owned hazardous and radioactive materials. This program was initiated to provide the DOE field offices with the tools necessary to help ensure, during this period of motor carrier deregulation, that only highly qualified carriers transport radioactive and hazardous commodities for the DOE. This program will assist DOE in maintaining their excellent performance record in the safe transportation of hazardous commodities. The program was also developed in response to public concern surrounding the transportation of hazardous materials. Representatives of other federal agencies, states, and tribal governments, as well as the news media, have expressed concern about the selection and qualification of carriers engaged in the transportation of Highway Route-Controlled Quantities (HRCQ) and Truckload (TL) quantities of radioactive material for the DOE. 8 refs

  1. Content Distribution for Telecom Carriers

    Directory of Open Access Journals (Sweden)

    Ben Falchuk

    2006-08-01

    Full Text Available Distribution of digital content is a key revenue opportunity for telecommunications carriers. As media content moves from analog and physical media-based distribution to digital on-line distribution, a great opportunity exists for carriers to claim their role in the media value chain and grow revenue by enhancing their broadband “all you can eat” high speed Internet access offer to incorporate delivery of a variety of paid content. By offering a distributed peer to peer content delivery capability with authentication, personalization and payment functions, carriers can gain a larger portion of the revenue paid for content both within and beyond their traditional service domains. This paper describes an approach to digital content distribution that leverages existing Intelligent Network infrastructure that many carriers already possess, as well as Web Services.

  2. Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David;

    We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers....

  3. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NARCIS (Netherlands)

    Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; De Leeuw, D.M.; Michels, M.A.J.

    2005-01-01

    From a numerically exact solution of the Master equation for hoppingtransport in a disordered energy landscape with a Gaussian densityof states, we determine the dependence on temperature, carrier density, and electric field of the charge carrier mobility. Experimentalspace-charge limited currents i

  4. Sustainable bioenergy carriers from wastes

    OpenAIRE

    Pereira, M.A.; Cavaleiro, A. J.; Abreu, A. A.; Costa, J.C.; Sousa, D. Z.; Alves, M.M.

    2012-01-01

    The development of new technologies for renewable energy production is crucial for decreasing the reliance in fossil fuels and improving global sustainability. Waste materials are valuable resources that can be used for the production of energy carriers. Organic wastes can be anaerobically digested to ultimately produce methane. Hydrogen can be recovered from this process, if methanogenesis is inhibited. These energy carriers can also be derived from recalcitrant materials in a two step-proce...

  5. Renewable energy carriers: Hydrogen or liquid air/nitrogen?

    International Nuclear Information System (INIS)

    The world's energy demand is met mainly by the fossil fuels today. The use of such fuels, however, causes serious environmental issues, including global warming, ozone layer depletion and acid rains. A sustainable solution to the issues is to replace the fossil fuels with renewable ones. Implementing such a solution, however, requires overcoming a number of technological barriers including low energy density, intermittent supply and mobility of the renewable energy sources. A potential approach to overcoming these barriers is to use an appropriate energy carrier, which can store, transport and distribute energy. The work to be reported in this paper aims to assess and compare a chemical energy carrier, hydrogen, with a physical energy carrier, liquid air/nitrogen, and discuss potential applications of the physical carrier. The ocean energy is used as an example of the renewable energy sources in the work. The assessment and comparison are carried out in terms of the overall efficiency, including production, storage/transportation and energy extraction. The environmental impact, waste heat recovery and safety issues are also considered. It is found that the physical energy carrier may be a better alternative to the chemical energy carrier under some circumstances, particularly when there are waste heat sources.

  6. Inhomogeneous and nonstationary Hall states of the CDW with quantized normal carriers

    OpenAIRE

    Brazovskii, Serguei

    2015-01-01

    We suggest a theory for a deformable and sliding charge density wave (CDW) in the Hall bar geometry for the quantum limit when the carriers in remnant small pockets are concentrated at lowest Landau levels (LL) forming a fractionally ($\

  7. Time-delayed behaviors of transient four-wave mixing signal intensity in inverted semiconductor with carrier-injection pumping

    Science.gov (United States)

    Hu, Zhenhua; Gao, Shen; Xiang, Bowen

    2016-01-01

    An analytical expression of transient four-wave mixing (TFWM) in inverted semiconductor with carrier-injection pumping was derived from both the density matrix equation and the complex stochastic stationary statistical method of incoherent light. Numerical analysis showed that the TFWM decayed decay is towards the limit of extreme homogeneous and inhomogeneous broadenings in atoms and the decaying time is inversely proportional to half the power of the net carrier densities for a low carrier-density injection and other high carrier-density injection, while it obeys an usual exponential decay with other decaying time that is inversely proportional to half the power of the net carrier density or it obeys an unusual exponential decay with the decaying time that is inversely proportional to a third power of the net carrier density for a moderate carrier-density injection. The results can be applied to studying ultrafast carrier dephasing in the inverted semiconductors such as semiconductor laser amplifier and semiconductor optical amplifier.

  8. Motor Carrier Evaluation Program procedure

    International Nuclear Information System (INIS)

    The US Department of Energy (DOE) Transportation Management Division (DOE-TMD) has the overall responsibility to provide a well-managed transportation program for the safe, efficient, and economical transportation of DOE-owned material. In the performance of these duties, the DOE-TMD has established an exemplary safety record in the transportation of hazardous materials. The DOE recognizes that its responsibility for hazardous material does not end when the shipments leave the DOE sites. A special partnership is needed between the DOE, the DOE contractors, and the carriers chosen to transport hazardous materials. As in any partnership, it is critical that DOE know essential information about its partner in this joint venture. In fulfillment of its responsibility for the safe transportation of radioactive materials as well as other hazardous commodities and wastes routinely shipped from many DOE locations nationwide, the DOE-TMD has developed this policy for a motor carrier evaluation program. It is the intent of the DOE-TMD that this Motor Carrier Evaluation Program be implemented at all DOE locations to the fullest extent practicable. This program will assist in the evaluation of carriers transporting Highway Route Controlled Quantities (HRCQ) of radioactive material, because these shipments frequently are in the ''public eye.'' The program will also evaluate truckload (TL) quantity transporters of hazardous materials, including radioactive material and chemical wastes. The program has also recently been expanded to include motor carriers transporting less-than-truckload (LTL) quantities of these materials

  9. Carrier cooling and exciton formation in GaSe

    International Nuclear Information System (INIS)

    The initial cooling of hot carriers and the subsequent exciton formation in GaSe are studied by time-resolved photoluminescence (PL) using femtosecond up-conversion techniques. From the time-resolved PL spectra of this layered III-VI semiconductor two different energy relaxation channels are derived. After an initial subpicosecond cooling due to Froehlich-type interaction of carriers with longitudinal optical E'(22) phonons a slower regime follows, which is dominated by deformation potential interaction with the nonpolar optical A1'(12) phonons. The coupling constant for nonpolar optical phonon scattering is derived. The subsequent formation of excitons is studied at different carrier densities and detection energies. A cross section for the free-exciton formation is determined based on a rate equation model. copyright 1997 The American Physical Society

  10. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    Science.gov (United States)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  11. Carrier sense data highway system

    Science.gov (United States)

    Frankel, Robert

    1984-02-14

    A data transmission system includes a transmission medium which has a certain propagation delay time over its length. A number of data stations are successively coupled to the transmission medium for communicating with one another. Each of the data stations includes a transmitter for originating signals, each signal beginning with a carrier of a duration which is at least the propagation delay time of the transmission medium. Each data station also includes a receiver which receives other signals from other data stations and inhibits operation of the transmitter at the same data station when a carrier of another signal is received.

  12. Road density

    Data.gov (United States)

    U.S. Environmental Protection Agency — Road density is generally highly correlated with amount of developed land cover. High road densities usually indicate high levels of ecological disturbance. More...

  13. 75 FR 72863 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-11-26

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration, DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that the Agency's Motor Carrier Safety Advisory Committee...

  14. 76 FR 12214 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2011-03-04

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration, DOT. ACTION: Notice: Announcement of Motor Carrier Safety Advisory Committee meeting; request for comment. SUMMARY: The Federal Motor Carrier Safety...

  15. 75 FR 50797 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-08-17

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that its Motor Carrier Safety Advisory Committee (MCSAC)...

  16. Lung density

    DEFF Research Database (Denmark)

    Garnett, E S; Webber, C E; Coates, G;

    1977-01-01

    The density of a defined volume of the human lung can be measured in vivo by a new noninvasive technique. A beam of gamma-rays is directed at the lung and, by measuring the scattered gamma-rays, lung density is calculated. The density in the lower lobe of the right lung in normal man during quiet...

  17. Hot carrier degradation in semiconductor devices

    CERN Document Server

    2015-01-01

    This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects imp...

  18. Hypernormal Densities

    OpenAIRE

    Giacomini, Raffaella; Gottschling, Andreas; Haefke, Christian; White, Halbert

    2002-01-01

    We derive a new family of probability densities that have the property of closed-form integrability. This flexible family finds a variety of applications, of which we illustrate density forecasting from models of the AR-ARCH class for U.S. inflation. We find that the hypernormal distribution for the model's disturbances leads to better density forecasts than the ones produced under the assumption that the disturbances are Normal or Student's t.

  19. Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures

    International Nuclear Information System (INIS)

    We present numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. It is found that the sheet carrier density in GaN channel increases nearly linearly with the thickness of AlN although the whole thickness and equivalent Al composition of AlxGa1-xN/AlN superlattices (SLs) barrier are kept constant. This result leads to the carrier confinement capability approaches saturation with thicknesses of AlN greater than 0.6 nm. Furthermore, the influence of carrier concentration distribution on carrier mobility was discussed. Theoretical calculations indicate that the achievement of high sheet carrier density is a trade-off with mobility.

  20. Dehydrogenation of Liquid Organic Hydrogen Carriers on Model Catalyst Surfaces

    OpenAIRE

    Gleichweit, Christoph

    2015-01-01

    Efficient energy storage systems have to be developed in order for renewable energy sources to replace today’s predominantly used carbon-based fossil fuels. Among suitable compounds for energy storage, hydrogen exhibits the highest gravimetric storage density (33 kWh/kg), but present physical hydrogen storage methods include either high pressures or cryogenic temperatures. One alternative concept is to store hydrogen in organic molecules, so-called liquid organic hydrogen carriers (LOHCs). Su...

  1. Carrier Deformability in Drug Delivery.

    Science.gov (United States)

    Morilla, Maria Jose; Romero, Eder Lilia

    2016-01-01

    Deformability is a key property of drug carriers used to increase the mass penetration across the skin without disrupting the lipid barrier. Highly deformable vesicles proved to be more effective than conventional liposomes in delivering drugs into and across the mammalian skin upon topical non occlusive application. In the past five years, highly deformable vesicles have been used for local delivery of drugs on joint diseases, skin cancer, atopic dermatitis, would healing, psoriasis, scar treatment, fungal, bacteria and protozoa infections. Promising topical vaccination strategies rely also in this type of carriers. Here we provide an overview on the main structural and mechanical features of deformable vesicles, to finish with an extensive update on their latest preclinical applications. PMID:26675226

  2. Fatigue reliability for LNG carrier

    Institute of Scientific and Technical Information of China (English)

    Xiao Taoyun; Zhang Qin; Jin Wulei; Xu Shuai

    2011-01-01

    The procedure of reliability-based fatigue analysis of liquefied natural gas (LNG) carrier of membrane type under wave loads is presented. The stress responses of the hotspots in regular waves with different wave heading angles and wave lengths are evaluated by global ship finite element method (FEM). Based on the probabilistic distribution function of hotspots' short-term stress-range using spectral-based analysis, Weibull distribution is adopted and discussed for fitting the long-term probabilistic distribution of stress-range. Based on linear cumulative damage theory, fatigue damage is characterized by an S-N relationship, and limit state function is established. Structural fatigue damage behavior of several typical hotspots of LNG middle ship section is clarified and reliability analysis is performed. It is believed that the presented results and conclusions can be of use in calibration for practical design and initial fatigue safety evaluation for membrane type LNG carrier.

  3. The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

    OpenAIRE

    Fung, S; Beling, CD; Ling, CC; Xu, SJ; Huang, Y.; Chen, XD; Wei, ZF; Zhi, CY

    2004-01-01

    The carrier concentration and scattering mechanism in undoped GaN film grown on sapphire were investigated. The film was grown on sapphire using metal organic chemical vapor deposition (MOCVD). Confocal micro-Raman spectroscopic measurements and temperature-dependant Hall (TDH) measurements were performed for the study of the depth distribution of the carrier density across the GaN film. The existence of a nonuniform spatial distribution of free carriers in the film with a highly conductive l...

  4. Gemini surfactants as gene carriers

    Directory of Open Access Journals (Sweden)

    Teresa Piskorska

    2010-03-01

    Full Text Available Gemini surfactants are a new class of amphiphilic compounds built from two classic surfactant moieties bound together by a special spacer group. These compounds appear to be excellent for creating complexes with DNA and are effective in mediating transfection. Thanks to their construction, DNA carrier molecules built from gemini surfactants are able to deliver genes to cells of almost any DNA molecule size, unattainable when using viral gene delivery systems. Moreover, they are much safer for living organisms.

  5. Recursive SDN for Carrier Networks

    OpenAIRE

    McCauley, James; Liu, Zhi; Panda, Aurojit; Koponen, Teemu; Raghavan, Barath; Rexford, Jennifer; Shenker, Scott

    2016-01-01

    Control planes for global carrier networks should be programmable (so that new functionality can be easily introduced) and scalable (so they can handle the numerical scale and geographic scope of these networks). Neither traditional control planes nor new SDN-based control planes meet both of these goals. In this paper, we propose a framework for recursive routing computations that combines the best of SDN (programmability) and traditional networks (scalability through hierarchy) to achieve t...

  6. Biocheese: A Food Probiotic Carrier

    OpenAIRE

    J. M. Castro; M. E. Tornadijo; Fresno, J. M.; H. Sandoval

    2015-01-01

    This review describes some aspects related to the technological barriers encountered in the development and stability of probiotic cheeses. Aspects concerning the viability of probiotic cultures in this matrix are discussed and the potential of cheese as a biofunctional food carrier is analyzed, outlying some points related to health and safety. In general, the manufacture of probiotic cheese should have little change when compared with the elaboration of cheese in the traditional way. The ph...

  7. Preventative maintenance of straddle carriers

    Directory of Open Access Journals (Sweden)

    Si Li

    2015-02-01

    Full Text Available Background: Robotic vehicles such as straddle carriers represent a popular form of cargo handling amongst container terminal operators.Objectives: The purpose of this industry-driven study is to model preventative maintenance (PM influences on the operational effectiveness of straddle carriers.Method: The study employs historical data consisting of 21 273 work orders covering a 27-month period. Two models are developed, both of which forecast influences of PM regimes for different types of carrier.Results: The findings of the study suggest that the reliability of the straddle fleet decreases with increased intervals of PM services. The study also finds that three factors – namely resources, number of new straddles, and the number of new lifting work centres – influence the performances of straddles.Conclusion: The authors argue that this collaborative research exercise makes a significant contribution to existing supply chain management literature, particularly in the area of operations efficiency. The study also serves as an avenue to enhance relevant management practice.

  8. Densities, Spectral Densities and Modality

    OpenAIRE

    Davies, PL Laurie; Kovac, A.

    2002-01-01

    This paper considers the problem of specifying a simple approximating density function for a given data set (x1,…,xn). Simplicity is measured by the number of modes but several different definitions of approximation are introduced. The taut string method is used to control the numbers of modes and to produce candidate approximating densities. Refinements are introduced that improve the local adaptivity of the procedures and the method is extended to spectral densities.

  9. Responsible implementation of expanded carrier screening.

    Science.gov (United States)

    Henneman, Lidewij; Borry, Pascal; Chokoshvili, Davit; Cornel, Martina C; van El, Carla G; Forzano, Francesca; Hall, Alison; Howard, Heidi C; Janssens, Sandra; Kayserili, Hülya; Lakeman, Phillis; Lucassen, Anneke; Metcalfe, Sylvia A; Vidmar, Lovro; de Wert, Guido; Dondorp, Wybo J; Peterlin, Borut

    2016-06-01

    This document of the European Society of Human Genetics contains recommendations regarding responsible implementation of expanded carrier screening. Carrier screening is defined here as the detection of carrier status of recessive diseases in couples or persons who do not have an a priori increased risk of being a carrier based on their or their partners' personal or family history. Expanded carrier screening offers carrier screening for multiple autosomal and X-linked recessive disorders, facilitated by new genetic testing technologies, and allows testing of individuals regardless of ancestry or geographic origin. Carrier screening aims to identify couples who have an increased risk of having an affected child in order to facilitate informed reproductive decision making. In previous decades, carrier screening was typically performed for one or few relatively common recessive disorders associated with significant morbidity, reduced life-expectancy and often because of a considerable higher carrier frequency in a specific population for certain diseases. New genetic testing technologies enable the expansion of screening to multiple conditions, genes or sequence variants. Expanded carrier screening panels that have been introduced to date have been advertised and offered to health care professionals and the public on a commercial basis. This document discusses the challenges that expanded carrier screening might pose in the context of the lessons learnt from decades of population-based carrier screening and in the context of existing screening criteria. It aims to contribute to the public and professional discussion and to arrive at better clinical and laboratory practice guidelines. PMID:26980105

  10. Carbon phosphide monolayers with superior carrier mobility

    Science.gov (United States)

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

    2016-04-01

    Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics.Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great

  11. 49 CFR 376.22 - Exemption for private carrier leasing and leasing between authorized carriers.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Exemption for private carrier leasing and leasing... MOTOR CARRIER SAFETY REGULATIONS LEASE AND INTERCHANGE OF VEHICLES Exemptions for the Leasing Regulations § 376.22 Exemption for private carrier leasing and leasing between authorized carriers....

  12. Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2011-12-01

    The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.

  13. Low-cost carriers fare competition effect

    OpenAIRE

    Carmona Benitez, R.B.; Lodewijks, G.

    2010-01-01

    This paper examines the effects that low-cost carriers (LCC’s) produce when entering new routes operated only by full-service carriers (FSC’s) and routes operated by low-cost carriers in competition with full-service carriers. A mathematical model has been developed to determine what routes should be operated by a low-cost carrier with better possibilities to subsist. The proposed model in this paper was set up by analyzing The United States domestic air transport market 2005 year database fr...

  14. Arithmetic density

    CERN Document Server

    Garay, Mauricio

    2012-01-01

    Arithmetic class are closed subsets of the euclidean space which generalise arithmetical conditions encoutered in dynamical systems, such as diophantine conditions or Bruno type conditions. I prove density estimates for such sets using Dani-Kleinbock-Margulis techniques.

  15. Impact of carriers in oral absorption

    DEFF Research Database (Denmark)

    Gram, Luise Kvisgaard; Rist, Gerda Marie; Lennernäs, Hans; Steffansen, Bente

    Carriers may mediate the permeation across enterocytes for drug substances being organic anions. Carrier mediated permeation for the organic anions estrone-3-sulfate (ES) and glipizide across Caco-2 cells were investigated kinetically, and interactions on involved carriers evaluated. Initial...... with K(m) 44microM and 38microM, respectively. BCRP inhibition affected both absorptive an exsorptive P(EPA) and P(APP) for ES. Glipizide apical P(UP) and absorptive P(APP) were not inhibitable. Basolateral P(UP) for glipizide was inhibitable, its P(EPA) prevented, and P(UP) was saturable with K(m) 56......microM, but exsorptive P(APP) was not affected. Carrier mediated exsorption kinetics for ES are seen at both apical and basolateral membranes, resulting in predominant exsorption despite presence of absorptive carrier(s). Carrier mediated basolateral P(UP) for glipizide was observed, but glipizide P...

  16. A new look at gravel pack carrier fluid properties

    Energy Technology Data Exchange (ETDEWEB)

    Scheuerman, R.F.

    1984-02-01

    For gravel pack carrier fluids, less viscosity is needed downhole than for suspending and pumping high gravel loadings on the surface. To achieve this dual viscosity need, breakers are added to degrade the viscosifying polymers. Unfortunately, viscosity breakback criteria are not well defined. In addition to the type and concentration of breaker and temperature, the apparent viscosity breakback time of a polymer solution also depends on the shear rate at which the viscosity is measured. As a result, industry breakback data generally disagree because of the variety of instruments and shear rates used to measure viscosity. This paper discusses two new viscosity breakback criteria for gravel packing carrier fluids: The time for the apparent viscosity at 0.03 sec/sup -1/ to decrease to 1000 cp, and start of compaction of the settled gravel bed. These criteria correlate well with fluid performance and apply to slurries with different initial viscosities (including crosslinked gels), brine densities, and gravel sizes. Data useful for formulating gravel pack carrier fluids are also presented. Although this paper does not define optimum downhole carrier fluid properties, the new criteria reflect downhole conditions better than most previous criteria. They should give better correlation with model studies and field experience, and, in turn, lead to a better understanding of the requirements for optimum downhole performance.

  17. BER Performance of IEEE 802.11ad for Single Carrier and Multi Carrier

    Directory of Open Access Journals (Sweden)

    Abhishek Kumar Gupta

    2012-05-01

    Full Text Available In present scenario 802.11n is one of the fastest standards which is widely popular. It provides a theoretical maximum of 450 megabits per second (Mbps, with a typical throughput of 100Mbps. As we know, there is high demand for higher speed due to an increasing of high definition (HD video on smart phone usage and home entertainment. As 802.11n is not able to provide the required speed needed for these uses, thus there is need for technologies which can meet therequirement. IEEE 802.11ad is one of such standards which meet the requirement needed for the above. IEEE 802.11ad standard operates at 60 GHz frequency, promise to deliver from 1 to 7 Gbps. 60 GHz band is one of the largest unlicensed bandwidth with availability of at least 5 GHz of continuous bandwidth worldwide. In this paper we have tested the IEEE 802.11ad system model Bits Error Rate (BER for different modulation technique under several coding scheme for both Single Carrier and Multi Carriers. In this model the modulation technique mainly used are Binary Phase Shift Keying (BPSK, Quaternary Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM, 64-Quadrature Amplitude Modulation (QAM and the coding scheme used is Low Density Parity Check (LDPC code with different code rate.

  18. Ultrafast dynamics of carrier LO phonon system in high electric field in polar semiconductors

    Science.gov (United States)

    Iida, M.; Katayama, S.

    2001-03-01

    The dynamics of carriers excited by an ultrashort laser pulse is simulated numerically in the presence of a strong electric field. The carrier density matrices (DMs) are treated within the equation of motion method by taking interaction with longitudinal optical (LO) phonons into account. It is shown that the temporal evolution of an electron DM exhibits a strong modification owing to LO phonon emissions in addition to interferences between the interband polarization and the optical pulse field in the external strong electric field.

  19. Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

    OpenAIRE

    Chang, Cui-Zu; Zhang, Jin-song; Liu, Min-Hao; Zhang, Zuo-Cheng; Feng, Xiao; Li, Kang; Wang, Li-Li; Chen, Xi; Dai, Xi; Fang, Zhong; Qi, Xiao-Liang; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Ma, Xu-Cun

    2011-01-01

    Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped TI requires ferromagnetism not relying on the charge carriers. We have realized the ferromagnetism independent of both polarity and density of carriers in Cr-doped BixSb2-xTe3 thin films grown by molecular beam epitaxy. Meanwhile, the anomalous Hall effect ...

  20. Stochastic Ordering based Carrier-to-Interference Ratio Analysis for the Shotgun Cellular Systems

    CERN Document Server

    Madhusudhanan, Prasanna; Youjian,; Liu,; Brown, Timothy X; Baker, Kenneth R

    2011-01-01

    A simple analytical tool based on stochastic ordering is developed to compare the distributions of carrier-to-interference ratio at the mobile station of two cellular systems where the base stations are distributed randomly according to certain non-homogeneous Poisson point processes. The comparison is conveniently done by studying only the base station densities without having to solve for the distributions of the carrier-to-interference ratio, that are often hard to obtain.

  1. Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions

    OpenAIRE

    Takashi Ichimura; Kohei Fujiwara; Hidekazu Tanaka

    2014-01-01

    Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced redox reactions revealed by recent investigations have, however, highlighted the complex nature of the ...

  2. Neural nets and chaotic carriers

    CERN Document Server

    Whittle, Peter

    2010-01-01

    ""Neural Nets and Chaotic Carriers"" develops rational principles for the design of associative memories, with a view to applying these principles to models with irregularly oscillatory operation so evident in biological neural systems, and necessitated by the meaninglessness of absolute signal levels. Design is based on the criterion that an associative memory must be able to cope with 'fading data', i.e., to form an inference from the data even as its memory of that data degrades. The resultant net shows striking biological parallels. When these principles are combined with the Freeman speci

  3. Carrier frequencies, holomorphy and unwinding

    CERN Document Server

    Coifman, Ronald R; Wu, Hau-tieng

    2016-01-01

    We prove that functions of intrinsic-mode type (a classical models for signals) behave essentially like holomorphic functions: adding a pure carrier frequency $e^{int}$ ensures that the anti-holomorphic part is much smaller than the holomorphic part $ \\| P_{-}(f)\\|_{L^2} \\ll \\|P_{+}(f)\\|_{L^2}.$ This enables us to use techniques from complex analysis, in particular the \\textit{unwinding series}. We study its stability and convergence properties and show that the unwinding series can stabilize and show that the unwinding series can provide a high resolution time-frequency representation, which is robust to noise.

  4. Technetium diagnostic agent and carrier

    International Nuclear Information System (INIS)

    A stable sup(99m)Tc-labelled radioactive diagnostic agent is produced by contacting sup(99m)Tc-containing pertechnetate with a non-radioactive carrier comprising a chelating agent, a water-soluble reducing agent and a stabilizer. The stabilizer is chosen from ascorbic acid and erythorbic acid and their pharmaceutically acceptable salts and esters. A mole ratio of more than 100 moles ascorbic or erythorbic acid to 1 mole of reducing agent provides a stable composition at high levels of radioactivity

  5. Wuestite - a solar energy carrier

    Energy Technology Data Exchange (ETDEWEB)

    Weidenkaff, A.; Nueesch, P.; Wokaun, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Reller, A. [Hamburg Univ., Hamburg (Germany)

    1997-06-01

    Hydrogen is produced when Wuestite (Fe{sub 1-y}O) is oxidised by water. This reaction is part of a two-step thermochemical metal oxide cycle for the storage of solar energy in the form of chemical energy carriers, characterised by a high chemical potential. The reaction was studied in a tubular furnace with on-line gas analysis and further characterised in detail by DTA und high-temperature X-ray powder diffraction. The influence of non-stoichiometry, morphology and temperature on the mechanism and kinetics of the water-splitting reaction was determined. (author) 3 figs., tabs., 3 refs.

  6. 78 FR 66801 - Motor Carrier Safety Advisory Committee; Charter Renewal

    Science.gov (United States)

    2013-11-06

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee; Charter Renewal AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Announcement of advisory... Committee that provides the Agency with advice and recommendations on motor carrier safety programs...

  7. Photoinduced Dedoping of Conducting Polymers: An Approach to Precise Control of the Carrier Concentration and Understanding Transport Properties.

    Science.gov (United States)

    Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

    2016-01-27

    Exploring the various applications of conjugated polymers requires systematic studies of their physical properties as a function of the doping density, which, consequently, calls for precise control of their doping density. In this study, we report a novel solid-state photoinduced charge-transfer reaction that dedopes highly conductive polyelectrolyte complexes such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate). Varying the UV-irradiation time of this material allows the carrier density inside the film to be precisely controlled over more than 3 orders of magnitude. We extract the carrier density, carrier mobility, and Seebeck coefficient at different doping levels to obtain a clear image of carrier-transport mechanisms. This approach not only leads to a better understanding of the physical properties of the conducting polymer but also is useful for developing applications requiring patterned, large-area conducting polymers. PMID:26734776

  8. Genetic determinants of mammographic density

    International Nuclear Information System (INIS)

    Changes in breast density are highly correlated with steroid hormone exposure. In a cross-sectional study of 396 Caucasian and African-American women, we evaluated whether polymorphisms in genes involved in steroid hormone biosynthesis and metabolism, CYP17 (T27C), COMT (Val158Met), 17HSDB1 (Ser312Gly) and 3HSDB1 (Asn367Thr), predict mammographic density. We also evaluated whether associations vary by menopausal and hormone replacement therapy status. We found no strong consistent relationships between polymorphisms in these genes and breast density. African-American women homozygous for the Thr allele of 3HSDB1 had increased density (the absolute difference versus the Asn/Asn genotype was +19.7%; P trend = 0.02), while Caucasian homozygous women had decreased density (-5.1%; P trend = 0.04). Among premenopausal women, carriers of the Ser allele had (not significantly) greater density (versus Gly/Gly genotype: +7.1%; P trend = 0.07). In addition, among current users of hormone replacement therapy, we observed that women with the low-activity Met/Met genotype of COMT had greater breast density (versus the Val/Val genotype: +11.7%; P trend = 0.01). Additional large studies evaluating these and other candidate breast cancer genes will be required to determine what proportion, if any, of the interindividual differences in breast density are due to underlying genetic variation in genes involved in steroid hormone biosynthesis or metabolism

  9. Low Bone Density

    Science.gov (United States)

    ... Density Exam/Testing › Low Bone Density Low Bone Density Low bone density is when your bone density ... people with normal bone density. Detecting Low Bone Density A bone density test will determine whether you ...

  10. Carrier accumulation near electrodes in ferroelectric films due to polarization boundary conditions

    International Nuclear Information System (INIS)

    We study the effect of surface polarization on the distribution of free carriers in a wide bandgap semiconductor ferroelectric (FE) film using a thermodynamic approach. We show that free carriers, namely, holes and electrons from ionizable impurities or atomic vacancies can accumulate near the film-electrode interface, if FE polarization profile has a very steep change near the surface that is specified by the extrapolation length. Such an outcome is just the opposite of what happens in a Schottky junction in a partially or fully depleted film. This is also an entirely different effect than what has been often studied in similar structures, where the work function and screening length of the electrode metal determines the electronic character of the interface. Even for low-to-moderate densities of ionizable defects with states within the bandgap close to the band edges, high densities of carriers can localize close to the electrodes in a single domain state FE film when above a critical thickness. For very low densities of such ionizable defects, short extrapolation lengths cause electrical domain formation with minimal carrier accumulation because of the already weak depolarizing fields. This is also true for films below a critical thickness with low-to-moderate densities of ionizable impurities, i.e., electrical domains get stabilized regardless of defect density. The implications of our findings for polarization controlled Schottky to Ohmic-like transition of an interface and experimental results are discussed. It is also found that interfaces of an n-type FE heterostructure can behave like a p-type depending on the barrier heights and impurity density. We conclude that, for low-to-moderate ionizable impurity densities, it is the rate of change of polarization at the interface with position rather than solely its presence that leads to carrier accumulation and that both interfaces can become Ohmic-like with opposite signs of carriers.

  11. Distinguishing between plasmon-induced and photo-excited carriers in a device geometry (Presentation Recording)

    Science.gov (United States)

    Zhao, Hangqi; Zheng, Bob Y.; Manjavacas, Alejandro; McClain, Michael J.; Nordlander, Peter; Halas, Naomi J.

    2015-09-01

    The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, could drastically alter how sunlight is converted into electricity or fuels by increasing the efficiency of light-harvesting devices through enhanced light-matter interactions. Surface plasmons can decay directly into energetic electron-hole pairs, or "hot" carriers, which can be used for photocurrent generation or photocatalysis. However, little has been understood about the fundamental mechanisms behind plasmonic carrier generation. Here we use metallic nano-wire based hot carrier devices on a wide-bandgap semiconductor substrate to show that plasmonic hot carrier generation is proportional to field intensity enhancement instead of bulk material absorption. We also show that interband carrier generation results in less energetic carriers than plasmon-induced generation, and a plasmon is required to inject electrons over a large energy barrier. Finite Difference Time Domain (FDTD) method is used for theoretical calculations, which match well with experimental results. This work points to a clear route to increasing the efficiency of plasmonic hot carrier devices and drastically simplifies the theoretical framework for understanding the mechanisms of hot carrier generation.

  12. Ultrafast Hot Carrier Scattering and Generation from Surface Plasmons in Noble Metals

    Science.gov (United States)

    Bernardi, Marco; Mustafa, Jamal; Neaton, Jeffrey B.; Louie, Steven G.

    2015-03-01

    Non-equilibrium ``hot''carriers in materials are challenging to study experimentally as they thermalize at subpicosecond time and nanometer length scale. Recent experiments employed hot carriers generated by light absorption or surface plasmon annihilation in noble metals (e.g., Au and Ag) for catalysis and solar cells. The energy distribution and transport of the generated hot carriers play a key role in these experiments. We present ab initio calculations of the energy distribution of hot carriers generated by surface plasmons in noble metals, and the relaxation time and mean free path of the hot carriers along different crystal directions within 5 eV of the Fermi energy. Our calculations show the interplay of the noble metal s and d bands in determining the damping rate of the plasmon and the mean free path of the hot carriers. The trends we find as a function of surface plasmon momentum and frequency allow us to define optimal experimental conditions for hot carrier generation and extraction. Our approach combines density functional theory, GW, and electron-phonon calculations. Our work provides microscopic insight into hot carriers in noble metals, and their ultrafast dynamics in the presence of surface plasmons.

  13. Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

    Directory of Open Access Journals (Sweden)

    Zervos Matthew

    2008-01-01

    Full Text Available Abstract We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The interface between states filled by free carriers intrinsic to the InN NWs and empty states has been determined to be at 1.35 eV using CW optical transmission measurements. Transient absorption measurements determined the absorption edge at higher energy due to the additional injected photogenerated carriers following femtosecond pulse excitation. The non-degenerate white light pump-probe measurements revealed that relaxation of the photogenerated carriers occurs on a single picosecond timescale which appears to be carrier density dependent. This fast relaxation is attributed to the capture of the photogenerated carriers by defect/surface related states. Furthermore, intensity dependent measurements revealed fast energy transfer from the hot photogenerated carriers to the lattice with the onset of increased temperature occurring at approximately 2 ps after pulse excitation.

  14. Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.

    Science.gov (United States)

    Zhang, Yingjie; Chen, Qian; Alivisatos, A Paul; Salmeron, Miquel

    2015-07-01

    Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step function changes of gate bias. The measurements reveal an exponential decay of mobile carrier density with time constants of 3-5 s for holes and ∼10 s for electrons. An Ohmic behavior, with uniform carrier density, was observed along the channel during the injection and transport processes. These slow, uniform carrier trapping processes are reversible, with time constants that depend critically on the gas environment. We propose that the underlying mechanism is some reversible electrochemical process involving dissociation and diffusion of water and/or oxygen related species. These trapping processes are dynamically activated by the injected charges, in contrast with static electronic traps whose presence is independent of the charge state. Understanding and controlling these processes is important for improving the performance of electronic, optoelectronic, and memory devices based on disordered semiconductors. PMID:26099508

  15. Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

    OpenAIRE

    Lisesivdin, S. B.; Atmaca, G.; ARSLAN, E.; Cakmakyapan, S; Kazar, O; Butun, S.; ul-Hassan, Jawad; Janzén, Erik; E. Ozbay

    2014-01-01

    Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SIC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier da...

  16. Carrier detection in xeroderma pigmentosum

    International Nuclear Information System (INIS)

    We were able to detect clinically normal carriers of xeroderma pigmentosum (XP) genes with coded samples of either peripheral blood lymphocytes or skin fibroblasts, using a cytogenetic assay shown previously to detect individuals with cancer-prone genetic disorders. Metaphase cells of phytohemagglutinin-stimulated T-lymphocytes from eight individuals who are obligate heterozygotes for XP were compared with those from nine normal controls at 1.3, 2.3, and 3.3 h after x-irradiation (58 R) during the G2 phase of the cell cycle. Lymphocytes from the XP heterozygotes had twofold higher frequencies of chromatid breaks or chromatid gaps than normal (P less than 10(-5)) when fixed at 2.3 or 3.3 h after irradiation. Lymphocytes from six XP homozygotes had frequencies of breaks and gaps threefold higher than normal. Skin fibroblasts from an additional obligate XP heterozygote, when fixed approximately 2 h after x-irradiation (68 R), had a twofold higher frequency of chromatid breaks and a fourfold higher frequency of gaps than fibroblasts from a normal control. This frequency of aberrations in cells from the XP heterozygote was approximately half that observed in the XP homozygote. The elevated frequencies of chromatid breaks and gaps after G2 phase x-irradiation may provide the basis of a test for identifying carriers of the XP gene(s) within known XP families

  17. Robust GPS carrier tracking under ionospheric scintillation

    Science.gov (United States)

    Susi, M.; Andreotti, M.; Aquino, M. H.; Dodson, A.

    2013-12-01

    Small scale irregularities present in the ionosphere can induce fast and unpredictable fluctuations of Radio Frequency (RF) signal phase and amplitude. This phenomenon, known as scintillation, can degrade the performance of a GPS receiver leading to cycle slips, increasing the tracking error and also producing a complete loss of lock. In the most severe scenarios, if the tracking of multiple satellites links is prevented, outages in the GPS service can also occur. In order to render a GPS receiver more robust under scintillation, particular attention should be dedicated to the design of the carrier tracking stage, that is the receiver's part most sensitive to these types of phenomenon. This paper exploits the reconfigurability and flexibility of a GPS software receiver to develop a tracking algorithm that is more robust under ionospheric scintillation. For this purpose, first of all, the scintillation level is monitored in real time. Indeed the carrier phase and the post correlation terms obtained by the PLL (Phase Locked Loop) are used to estimate phi60 and S4 [1], the scintillation indices traditionally used to quantify the level of phase and amplitude scintillations, as well as p and T, the spectral parameters of the fluctuations PSD. The effectiveness of the scintillation parameter computation is confirmed by comparing the values obtained by the software receiver and the ones provided by a commercial scintillation monitoring, i.e. the Septentrio PolarxS receiver [2]. Then the above scintillation parameters and the signal carrier to noise density are exploited to tune the carrier tracking algorithm. In case of very weak signals the FLL (Frequency Locked Loop) scheme is selected in order to maintain the signal lock. Otherwise an adaptive bandwidth Phase Locked Loop (PLL) scheme is adopted. The optimum bandwidth for the specific scintillation scenario is evaluated in real time by exploiting the Conker formula [1] for the tracking jitter estimation. The performance

  18. Shifting densities

    OpenAIRE

    Mille, Matthieu

    2000-01-01

    In this paper, the author adopt a time-geography approach to examine the temporal variation of urban density by analysing spatial load changes at different times of the day at the communal and community level. The evolution of means of transport coupled with the abandon of the notion of direct proximity to the urban dwelling place provide the basis for this new approach to the study of urban densities. The shift towards spatial specialisation within cities has lead to radical changes in the f...

  19. Carrier-dependent magnetic anisotropy of Gd-adsorbed graphene

    Directory of Open Access Journals (Sweden)

    Yuan Lu

    2016-05-01

    Full Text Available Using first-principles calculation based on density functional theory, we study the magnetic anisotropy of Gd-adsorbed graphene and its dependence on carrier accumulation. We show that carrier accumulation not only impacts the magnitude of magnetic anisotropy but also switches its sign. Hole accumulation enhances the perpendicular anisotropy up to ∼16 meV per Gd atom, while electron accumulation switches the anisotropy from perpendicular to in-plane direction. Moreover, we find that the first order perturbation of spin-orbit coupling interaction induces a pseudo-gap at Γ for the perpendicular magnetization, which leads to the the anomalous magnetic anisotropy for the neutral composite. Our findings pave the way for magneto-electric materials based on rare-earth-decorated graphene for voltage-controlled spintronics.

  20. Influence of ultrafast carrier dynamics on semiconductor absorption spectra

    CERN Document Server

    Ouerdane, H

    2001-01-01

    set of coupled rate equations. We obtained a good qualitative agreement with experiments and further insight into the interplay between the various dynamical processes by varying the phenomenological parameters entering the rate equations. In particular we found that the carrier spin-flip occurs on a relatively long time scale (several tens of picoseconds) compared to the carrier distributions relaxation and thermalization (a picosecond or less). We also could monitor the time evolution of the plasma density, energy, temperature and screening. In this thesis, we also studied the photoluminescence in II-VI quantum wells at room temperature. We built a mathematical model to account for Coulomb correlations that are expected to strongly influence the spontaneous emission rate in these materials. We assumed the 1s exciton-free electron scattering to be the main process leading an exciton to the photon line before recombination. The excitonic wavefunctions in a 2D screened Coulomb potential were calculated using t...

  1. Carrier-dependent magnetic anisotropy of Gd-adsorbed graphene

    Science.gov (United States)

    Lu, Yuan; Zhou, Tie-ge; Shao, Bin; Zuo, Xu; Feng, Min

    2016-05-01

    Using first-principles calculation based on density functional theory, we study the magnetic anisotropy of Gd-adsorbed graphene and its dependence on carrier accumulation. We show that carrier accumulation not only impacts the magnitude of magnetic anisotropy but also switches its sign. Hole accumulation enhances the perpendicular anisotropy up to ˜16 meV per Gd atom, while electron accumulation switches the anisotropy from perpendicular to in-plane direction. Moreover, we find that the first order perturbation of spin-orbit coupling interaction induces a pseudo-gap at Γ for the perpendicular magnetization, which leads to the the anomalous magnetic anisotropy for the neutral composite. Our findings pave the way for magneto-electric materials based on rare-earth-decorated graphene for voltage-controlled spintronics.

  2. Recent Advances in Subunit Vaccine Carriers.

    Science.gov (United States)

    Vartak, Abhishek; Sucheck, Steven J

    2016-01-01

    The lower immunogenicity of synthetic subunit antigens, compared to live attenuated vaccines, is being addressed with improved vaccine carriers. Recent reports indicate that the physio-chemical properties of these carriers can be altered to achieve optimal antigen presentation, endosomal escape, particle bio-distribution, and cellular trafficking. The carriers can be modified with various antigens and ligands for dendritic cells targeting. They can also be modified with adjuvants, either covalently or entrapped in the matrix, to improve cellular and humoral immune responses against the antigen. As a result, these multi-functional carrier systems are being explored for use in active immunotherapy against cancer and infectious diseases. Advancing technology, improved analytical methods, and use of computational methodology have also contributed to the development of subunit vaccine carriers. This review details recent breakthroughs in the design of nano-particulate vaccine carriers, including liposomes, polymeric nanoparticles, and inorganic nanoparticles. PMID:27104575

  3. Inert carriers for column extraction chromatography

    International Nuclear Information System (INIS)

    Inert carriers used in column extraction chromatography are reviewed. Such carriers are devided into two large groups: hydrophilic carriers which possess high surface energy and are well wetted only with strongly polar liquids (kieselguhrs, silica gels, glasses, cellulose, Al2O3) and water-repellent carriers which possess low surface energy and are well wetted with various organic solvents (polyethylene, polytetrafluorethylene polytrifluorochlorethylene). Properties of various carriers are presented: structure, chemical and radiation stability, adsorption properties, extracting agent capacity. The effect of structure and sizes of particles on the efficiency of chromatography columns is considered. Ways of immovable phase deposition on the carrier and the latter's regeneration. Peculiarities of column packing for preparative and continuous chromatography are discussed

  4. Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

    Science.gov (United States)

    Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

    2013-05-22

    The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials. PMID:23607819

  5. Global Telecommunications Services: Strategies of Major Carriers

    OpenAIRE

    Jerry Mccreary; William R. Boulton; Chetan Sankar

    1993-01-01

    The globalization of telecommunications markets is of primary concern for today’s large telecommunications carriers. International business telecommunications is growing at a rate twice that of domestic traffic. Multi-national customers with offices around the world are demanding integrated solutions to their telecommunications needs. As telecommunication carriers respond to these customers’ needs, the carriers are beginning to expand outside their national boundaries. This paper identifi...

  6. Free carrier absorption in quantum cascade structures

    OpenAIRE

    Carosella, F.; Ndebeka-Bandou, C.; Ferreira, R.; Dupont, E; K. Unterrainer; Strasser, G.; Wacker, Andreas; Bastard, G.

    2011-01-01

    We show that the free carrier absorption in Quantum Cascade Lasers is very small and radically different from the classical Drude result on account of the orthogonality between the direction of the carrier free motion and the electric field of the laser emission. A quantum mechanical calculation of the free carrier absorption and inter-subband oblique absorption induced by interface defects, coulombic impurities and optical phonon absorption/emission is presented for QCL's with a double quant...

  7. Secure quantum carriers for quantum state sharing

    OpenAIRE

    Karimipour, Vahid; Marvian, Milad

    2010-01-01

    We develop the concept of quantum carrier and show that messages can be uploaded and downloaded from this carrier and while in transit, these messages are hidden from external agents. We explain in detail the working of the quantum carrier for different communication tasks, including quantum key distribution, classical secret and quantum state sharing among a set of $n$ players according to general threshold schemes. The security of the protocol is discussed and it is shown that only the legi...

  8. Heterozygote advantage in Tay-Sachs carriers?

    OpenAIRE

    Spyropoulos, B; Moens, P B; Davidson, J.; Lowden, J. A.

    1981-01-01

    Chi-square analyses of new data as well as data previously reported by Myrianthopoulos have shown that grandparents of Tay-Sachs carriers die from proportionally the same causes as grandparents of noncarriers. It is unlikely that there is any advantage to being a Tay-Sachs carrier insofar as resistance to tuberculosis is concerned. Our results are further evidence to support Fraikor's claim that the high carrier frequency of the allele in Ashkenazi Jews is probably caused by a combination of ...

  9. Multi-carrier technologies for wireless communication

    CERN Document Server

    Nassar, Carl R; Wu, Zhiqiang; Wiegandt, David A; Zekavat, S Alireza; Shattil, Steve

    2006-01-01

    1. Introduction. 2. Overview of Multi-Carrier Technologies. 3. High-Performance High-Capacity MC-CDMA for Future Generations: The CI Approach. 4. High Performance, High Throughput TDMA via Multi-Carrier Implementations. 5. High-Performance, High-Capacity DS-CDMA via Multicarrier Implementation. 6. High-Performance, High-Throughput OFDM with Low PAPR via Carrier Interferometry Phase Coding. 7. The Marriage of Smart Antenna Arrays and Multi-Carrier Systems: Spatial Sweeping, Transmit Diversity, and Directionality. Index.

  10. 14 CFR 221.204 - Adoption of provisions of one carrier by another carrier.

    Science.gov (United States)

    2010-01-01

    ... TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS TARIFFS Electronically Filed Tariffs § 221.204... carrier, the effective and prospective fares of the adopted carrier shall be changed to reflect the...

  11. Spontaneous Charge Carrier Localization in Extended One-Dimensional Systems

    Science.gov (United States)

    Vlček, Vojtěch; Eisenberg, Helen R.; Steinle-Neumann, Gerd; Neuhauser, Daniel; Rabani, Eran; Baer, Roi

    2016-05-01

    Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects, or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally tuned range-separated density functional theory and many-body perturbation calculations within the G W approximation reveal that in trans-polyacetylene and polythiophene the hole density localizes on a length scale of several nanometers. This is due to exchange-induced translational symmetry breaking of the charge density. Ionization potentials, optical absorption peaks, excitonic binding energies, and the optimally tuned range parameter itself all become independent of polymer length as it exceeds the critical localization length. Moreover, we find that lattice disorder and the formation of a polaron result from the charge localization in contrast to the traditional view that lattice distortions precede charge localization. Our results can explain experimental findings that polarons in conjugated polymers form instantaneously after exposure to ultrafast light pulses.

  12. A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson’s equation.Using the numerical calculation method,a novel model of photo-carrier screening effect is presented.Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed.The influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also analyzed.It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage.Besides,the incident light duration has strong impact on the photo-carrier screening effect.

  13. Dynamics of Below-Band-Gap Carrier in Highly Excited GaN

    Institute of Scientific and Technical Information of China (English)

    郭冰; 黄锦圣; 叶志镇; 江红星; 林景瑜

    2003-01-01

    Femtosecond time-resolved reflectivity was used to investigate below-band-gap (3.1 eV) carrier dynamics in a nominally undoped GaN epilayer under high excitation. A 2.5-ps rising process can be observed in the transient trace. This shot rising time results from the hot phonon effects which can cause a delayed energy relaxation of the initial photocarriers toward the band edge. From the density dependence of the carrier dynamics, the Mott density was estimated to be 1.51-1.56 × 1019 cm-3. Below the Mott density, the initial probed carrier dynamics was explained to the effect of acoustic phonon-assisted tunnelling for localized states, where a significant excitation density dependence of the tunnelling probability was observed due to the optically induced bandtail extension to lower energies. Above the Mott density, the measured carrier dynamics reflected the relaxation of an electron-hole plasma, in which a distinct fast decay component of 2.3 ps was observed due to the onset of nonlinear relaxation processes such Auger recombination.

  14. Inert carrier drying and coating process

    International Nuclear Information System (INIS)

    An inert carrier process is described for drying radioactive (particularly low level) waste material and for incorporating the dry material into a binder matrix from which the dried material will not be leached. Experimental details, and examples of the carrier and binder materials, are given. (U.K.)

  15. Providing resilience for carrier ethernet multicast traffic

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang; Manolova, Anna Vasileva; Rasmussen, Anders; Dittmann, Lars; Berger, Michael Stübert

    2009-01-01

    This paper presents an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we detail how multicast traffic, which is essential for e.g. IPTV can be protected. We present Carrier Ethernet resilience methods for linear and ring networks and show by simulation...

  16. Towards 100 gigabit carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2010-01-01

    OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  17. Providing resilience for carrier ethernet multicast traffic

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang;

    2009-01-01

    This paper presents an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we detail how multicast traffic, which is essential for e.g. IPTV can be protected. We present Carrier Ethernet resilience methods for linear and ring networks and show by simulation...... that the availability of a multicast connection can be significantly increased by applying relevant resilience techniques....

  18. Dynamics of carrier recombination in a semiconductor laser structure

    Energy Technology Data Exchange (ETDEWEB)

    Dzhioev, R. I., E-mail: dzhioev@orient.ioffe.ru; Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  19. Space telemetry degradation due to Manchester data asymmetry induced carrier tracking phase error

    Science.gov (United States)

    Nguyen, Tien M.

    1991-01-01

    The deleterious effects that the Manchester (or Bi-phi) data asymmetry has on the performance of phase-modulated residual carrier communication systems are analyzed. Expressions for the power spectral density of an asymmetric Manchester data stream, the interference-to-carrier signal power ratio (I/C), and the error probability performance are derived. Since data asymmetry can cause undesired spectral components at the carrier frequency, the I/C ratio is given as a function of both the data asymmetry and the telemetry modulation index. Also presented are the data asymmetry and asymmetry-induced carrier tracking loop and the system bit-error rate to various parameters of the models.

  20. Selection of Carrier Waveforms for PWM Inverter

    Institute of Scientific and Technical Information of China (English)

    陈国呈; 屈克庆; 许春雨; 孙承波

    2003-01-01

    In this paper the influence of different carrier waveforms upon the output characteristics of PWM inverter is described in detail. When a triangular carrier waveform is used in hard-switching PWM inverters, harmonics exist in the neighborhood of the output frequency of the inverter output voltage and current due to the dead time. The triangular carrier waveform used in soft-switching PWM inverter will cause difficulties in controlling resonance-trigger time, higher loss in the resonant circuit, and less utilization of the DC bus voltage. If a sawtooth carrier is used in hard-switching PWM inverter, there will be severe distortion in the current waveform. When sawtooth carriers with alternate positive and negative slopes are used in soft-switching PWM inverters, the resonancetrigger time is easy to control, and distortion in the output voltage and current caused by the dead time will not appear.

  1. Methanol as an energy carrier

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, P.; Grube, T.; Hoehlein, B. (eds.)

    2006-07-01

    For the future, a strongly growing energy demand is expected in the transport sector worldwide. Economically efficient oil production will run through a maximum in the next decade. Higher fuel prices and an environmentally desirable reduction of emissions will increase the pressure for reducing fuel consumption and emissions in road traffic. These criteria show the urgent necessity of structural changes in the fuel market. Due to its advantages concerning industrial-scale production, storage and global availability, methanol has the short- to medium-term potential for gaining increased significance as a substitution product in the energy market. Methanol can be produced both from fossil energy sources and from biomass or waste materials through the process steps of synthesis gas generation with subsequent methanol synthesis. Methanol has the potential to be used in an environmentally friendly manner in gasoline/methanol mixtures for flexible fuel vehicles with internal combustion engines and in diesel engines with pure methanol. Furthermore, it can be used in fuel cell vehicles with on-board hydrogen production in direct methanol fuel cell drives, and in stationary systems for electricity and heat generation as well as for hydrogen production. Finally, in portable applications it serves as an energy carrier for electric power generation. In this book, the processes for the production and use of methanol are presented and evaluated, markets and future options are discussed and issues of safety and environmental impacts are addressed by a team of well-known authors. (orig.)

  2. Effects of carrier-carrier scattering on population inversion in graphene under pulse photoexcitation

    Science.gov (United States)

    Satou, Akira; Ryzhii, Victor; Otsuji, Taiichi

    2015-01-01

    We study the carrier relaxation dynamics in intrinsic graphene after pulse photoexcitation and reveal effects of intraband carrier-carrier scattering on population inversion in the terahertz region, by conducting simulation based on the quasi-classical Boltzmann equation. It is demonstrated that by changing the dielectric constant of the surrounding materials the rate of carrier-carrier scattering can be controlled and the relaxation dynamics differs for cases with low and high dielectric constants. It is also found that the Pauli blocking of photogeneration in case of the pulse photoexcitation causes decrease in the photocarrier concentration and thus weakening of population inversion with higher dielectric constant.

  3. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  4. Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene

    Energy Technology Data Exchange (ETDEWEB)

    Iglesias, J. M.; Martín, M. J.; Pascual, E.; Rengel, R., E-mail: raulr@usal.es [Department of Applied Physics, University of Salamanca, Salamanca 37008 (Spain)

    2016-01-25

    We study, by means of a Monte Carlo simulator, the hot phonon effect on the relaxation dynamics in photoexcited graphene and its quantitative impact as compared with considering an equilibrium phonon distribution. Our multi-particle approach indicates that neglecting the hot phonon effect significantly underestimates the relaxation times in photoexcited graphene. The hot phonon effect is more important for a higher energy of the excitation pulse and photocarrier densities between 1 and 3 × 10{sup 12 }cm{sup −2}. Acoustic intervalley phonons play a non-negligible role, and emitted phonons with wavelengths limited up by a maximum (determined by the carrier concentration) induce a slower carrier cooling rate. Intrinsic phonon heating is damped in graphene on a substrate due to the additional cooling pathways, with the hot phonon effect showing a strong inverse dependence with the carrier density.

  5. Intensity dependence of the minority-carrier difusion length in amorphous silicon based alloys

    Science.gov (United States)

    Hack, M.; Shur, M.

    1984-04-01

    Many of the recent measurements of the minority-carrier diffusion length (Lp) in amorphous silicon based alloys have been based on a utilization of the surface photovoltage (SPV). In this case an equation relating photon flux and Lp under ideal conditions has to be modified because of the back diffusion of carriers and the effects of high field regions. To account for the high field region, the 'aparent' diffusion length has been determined for varying intensities of bias light. In the present investigation, a theoretical analysis shows that the zero field diffusion length is indeed intensity dependent and that this dependence can be directly related to the slope of the density of states near the valence band edge. The intensity dependence of the minority carrier diffusion length and the energy slope of the density of states near the valence band edge are obtained on the basis of experimental results.

  6. Fourier-transform-based model for carrier transport in semiconductor heterostructures: Longitudinal optical phonon scattering

    Science.gov (United States)

    Lü, X.; Schrottke, L.; Grahn, H. T.

    2016-06-01

    We present scattering rates for electrons at longitudinal optical phonons within a model completely formulated in the Fourier domain. The total intersubband scattering rates are obtained by averaging over the intrasubband electron distributions. The rates consist of the Fourier components of the electron wave functions and a contribution depending only on the intersubband energies and the intrasubband carrier distributions. The energy-dependent part can be reproduced by a rational function, which allows for the separation of the scattering rates into a dipole-like contribution, an overlap-like contribution, and a contribution which can be neglected for low and intermediate carrier densities of the initial subband. For a balance between accuracy and computation time, the number of Fourier components can be adjusted. This approach facilitates an efficient design of complex heterostructures with realistic, temperature- and carrier density-dependent rates.

  7. Sodium conversion experiments in the Inert Carrier Process demonstration plant

    International Nuclear Information System (INIS)

    The purpose of the sodium treatment studies reported here was to evaluate the use of the Inert Carrier Process (ICP) for converting sodium metal to a stable disposal form. The ICP demonstration plant consists of a closed loop of silicone oil that is circulated through a reservoir called a disperser. Solid sodium particles were fed to the disperser and kept suspended in the silicone oil carrier by turbulence. The sodium did not react with the silicone oil carrier. The dispersion of sodium in silicone oil was fed to an in-line mixer (''jet'' mixer) where it was mixed with a reactant. Water was used as the reactant in most of the tests, generating sodium hydroxide and hydrogen as the initial products. Analysis of the final solid product from the reaction indicated that the sodium hydroxide initial product interacted with the silicone oil. Complete reaction of the sodium in the demonstration plant required at least a 6/1 molar ratio of water to sodium. Good separation of the product solution was difficult because of the small difference in density between the aqueous product phase and the organic carrier phase. Emulsification of the silicone oil-aqueous solution was minimized by applying heat to the separator. Foaming of the silicone oil in the separator occurred, aggravated by the evolution of hydrogen from the sodium conversion reaction. Bench-scale tests were conducted to analyze and resolve several problems encountered in the plant experiments, such as incomplete reaction in the jet mixer, poor separation of the product from the silicone oil, formation of an oil aqueous solution emulsion in the separator, and oil foaming in the separator. Solidification tests were carried out to immobilize the sodium conversion product by mixing it with various binders. The most satisfactory binder was EPON 828, an epoxy resin

  8. 49 CFR 369.2 - Classification of carriers-motor carriers of property, household goods carriers, and dual...

    Science.gov (United States)

    2010-10-01

    ... operating revenues after applying the revenue deflator formula shown in Note A. (3) When a business combination occurs such as a merger, reorganization, or consolidation, the surviving carrier shall...

  9. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao; Fu, Rong; Ruepp, Sarah Renée; Wessing, Henrik; Berger, Michael Stübert

    2009-01-01

    technology, making the use of Ethernet as a convergence layer for Next Generation Networks a distinct possibility. Triple Play services, in particular IPTV, are expected to be a main drivers for carrier Ethernet, however, a number of challenges must be addressed including QoS enabled control plane, enhanced...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  10. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2009-01-01

    Ethernet as a transport technology has, up to now, lacked the features such as network layer architecture, customer separation and manageability that carriers require for wide-scale deployment. However, with the advent of PBB-TE and T-MPLS, it is now possible to use Ethernet as a transport...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  11. ISRAEL’S NATIONAL WATER CARRIER

    OpenAIRE

    Nathan Cohen

    2008-01-01

    The National Water Carrier of Israel (Ha Movil Ha' Artzi). It is the main water project of Israel and its main task is to transfer water from the rainy north to the center and to the arid south. The National Water Carrier connects the Sea of Galilee with Israel's water system. The original goal was to provide irrigation water to Negev. Today 80% of the water is utilized for Israel's domestic consumption. Most of the water works in Israel are combined with the National Water Carrier for about...

  12. Carrier scattering in metals and semiconductors

    CERN Document Server

    Gantmakher, VF

    1987-01-01

    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

  13. Renewable Hydrogen Carrier — Carbohydrate: Constructing the Carbon-Neutral Carbohydrate Economy

    OpenAIRE

    Y.-H. Percival Zhang; Mielenz, Jonathan R.

    2011-01-01

    The hydrogen economy presents an appealing energy future but its implementation must solve numerous problems ranging from low-cost sustainable production, high-density storage, costly infrastructure, to eliminating safety concern. The use of renewable carbohydrate as a high-density hydrogen carrier and energy source for hydrogen production is possible due to emerging cell-free synthetic biology technology—cell-free synthetic pathway biotransformation (SyPaB). Assembly of numerous enzymes and ...

  14. Renewable Hydrogen Carrier — Carbohydrate: Constructing the Carbon-Neutral Carbohydrate Economy

    OpenAIRE

    Y.-H. Percival Zhang; Mielenz, Jonathan R.

    2011-01-01

    The hydrogen economy presents an appealing energy future but its implementation must solve numerous problems ranging from low-cost sustainable production, high-density storage, costly infrastructure, to eliminating safety concern. The use of renewable carbohydrate as a high-density hydrogen carrier and energy source for hydrogen production is possible due to emerging cell-free synthetic biology technology–cell-free synthetic pathway biotransformation (SyPaB). Assembly of numerous enzymes and ...

  15. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  16. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    International Nuclear Information System (INIS)

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices

  17. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Science.gov (United States)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  18. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

    2015-07-07

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V{sub 2}) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  19. Clusters of dislocations in a carrier wave

    International Nuclear Information System (INIS)

    Clusters of point dislocations (wave vortices) may be present within an otherwise perfect plane scalar wave, a carrier wave in two dimensions, which may be evanescent. The question arises: is it possible to deduce the orientation of the distant undisturbed carrier wave purely from local information about the cluster itself? For groups of two and four dislocations in a carrier wave, this may be done by using no other information than the local phase map or the individual positions of the singularities. The maximum number possible in a cluster with a carrier wave is 4 and the total strength (topological charge) of a cluster is always zero or ± 2. The study includes an examination of degenerate dislocations of strength zero or ± 1

  20. The Kinetics of Carrier Transport Inhibition

    DEFF Research Database (Denmark)

    Rosenberg, T.; Wilbrandt, Robert Walter

    1962-01-01

    The kinetical treatment of enzymatic carrier transports as given in previous communications has been extended to conditions of inhibition. Various possible types of inhibitors have been considered differing in the site of attack (enzyme or carrier), in the mode of action (competing with the...... substrate for the enzyme or the carrier or for both, competing with the carrier for the enzyme, or non-competitive) and in the ability of penetrating the membrane. Experiments are reported on the inhibition of glucose and fructose transport across the human red cell membrane by phlorizine, phloretine and......, with the result that a certain asymmetry of inhibition (stronger inhibition of exit than of entrance) is to be expected. This asymmetry was termed “first order asymmetry”. In experiments with each of the three inhibitors an asymmetry of inhibition in the expected direction was observed which however...

  1. Physician Fee Schedule Carrier Specific Files

    Data.gov (United States)

    U.S. Department of Health & Human Services — The Centers for Medicare and Medicaid Services (CMS) has condensed all 56 Physician Fee Schedule (PFS) carrier specific pricing files into one zip file. It is...

  2. Intraoral radiation carrier for edentulous patients

    International Nuclear Information System (INIS)

    The principles of fabricating an intraoral radioactive carrier have been described to treat malignant diseases of the oral cavity. The prosthesis provides consistent direction and fixation of the radioactive source into the same location

  3. Intraoral radiation carrier for edentulous patients

    Energy Technology Data Exchange (ETDEWEB)

    Sela, M.; Taicher, S.

    1983-12-01

    The principles of fabricating an intraoral radioactive carrier have been described to treat malignant diseases of the oral cavity. The prosthesis provides consistent direction and fixation of the radioactive source into the same location.

  4. Protection switching for carrier ethernet multicast

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Berger, Michael Stübert

    2010-01-01

    This paper addresses network survivability for IPTV multicast transport in Carrier Ethernet networks. The impact of link failures is investigated and suggestions for intelligent multicast resilience schemes are proposed. In particular, functions of the multicast tree are integrated with the Carrier...... recovery path length, recovery time, number of branch nodes and operational complexity. The integrated approach therefore shows significant potential to increase the QoE for IPTV users in case of network failures and recovery actions....

  5. Airport Congestion When Carriers Have Market Power

    OpenAIRE

    Brueckner, Jan K.

    2002-01-01

    This paper analyzes airport congestion when carriers are nonatomistic, showing how the results of the road-pricing literature are modified when the economic agents causing congestion have market power. The analysis shows that when an airport is dominated by a monopolist, congestion is fully internalized, yielding no role for congestion pricing under monopoly conditions. Under a Cournot oligopoly, however, carriers are shown to internalize only the congestion they impose on themselves. A toll ...

  6. Evaluating multicast resilience in carrier ethernet

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang;

    2010-01-01

    This paper gives an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we show how multicast traffic, which is essential for IPTV can be protected. We detail the ackground for resilience mechanisms and their control and e present Carrier Ethernet...... resilience methods for linear nd ring networks. By simulation we show that the vailability of a multicast connection can be significantly increased by applying protection methods....

  7. Preparation and application of magnetic microsphere carriers

    Institute of Scientific and Technical Information of China (English)

    ZHANG Bo; XING Jianmin; LIU Huizhou

    2007-01-01

    Magnetic microsphere carriers have received considerable attention,primarily because of their wide applications in the fields of biomedicine and bioengineering.In this paper,preparation methods,surface modification and application of magnetic carriers are reviewed.Emphasis will be placed on recent biological and biomedical developments and trends such as enzyme immobilization,cell isolation,protein purification,target drugs and DNA separation.

  8. Hot carrier solar cell absorbers: investigation of carrier cooling properties of candidate materials

    Science.gov (United States)

    Conibeer, G.; Shrestha, Santosh; Huang, Shujuan; Patterson, Robert; Xia, Hongze; Feng, Yu; Zhang, Pengfei; Gupta, Neeti; Smyth, Suntrana; Liao, Yuanxun; Lin, Shu; Wang, Pei; Dai, Xi; Chung, Simon; Yang, Jianfeng; Zhang, Yi

    2015-09-01

    The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells.

  9. Radio Science Measurements with Suppressed Carrier

    Science.gov (United States)

    Asmar, Sami; Divsalar, Dariush; Oudrhiri, Kamal

    2013-01-01

    Radio Science started when it became apparent with early Solar missions that occultations by planetary atmospheres would affect the quality of radio communications. Since then the atmospheric properties and other aspects of planetary science, solar science, and fundamental physics were studied by scientists. Radio Science data was always extracted from a received pure residual carrier (without data modulation). For some missions, it is very desirable to obtain Radio Science data from a suppressed carrier modulation. In this paper we propose a method to extract Radio Science data when a coded suppressed carrier modulation is used in deep space communications. Type of modulation can be BPSK, QPSK, OQPSK, MPSK or even GMSK. However we concentrate mostly on BPSK modulation. The proposed method for suppressed carrier simply tries to wipe out data that acts as an interference for Radio Science measurements. In order to measure the estimation errors in amplitude and phase of the Radio Science data we use Cramer-Rao bound (CRB). The CRB for the suppressed carrier modulation with non-ideal data wiping is then compared with residual carrier modulation under the same noise condition. The method of derivation of CRB for non-ideal data wiping is an innovative method that presented here. Some numerical results are provided for coded system.

  10. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10 K and 100 K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10 K and 50 K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  11. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    International Nuclear Information System (INIS)

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10 K and 100 K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10 K and 50 K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers

  12. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  13. Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

    International Nuclear Information System (INIS)

    Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride. - Graphical abstract: In heavily doped semiconductors potential barriers may lead to both carrier energy filtering and localization. This may lead to an enhancement of the thermoelectric properties of the material, resulting in an unexpected increase of the power factor with the doping level. Highlights: ► Potential barriers are shown to lead to carrier localization in thermoelectric materials. ► Evidence is put forward of the formation of a mobility edge. ► Energy filtering and localization may explain the enhancement of power factor in degenerate semiconductors.

  14. Application of mathematical modeling-based algorithms to 'off-carrier' cobalt-60 irradiation processes

    International Nuclear Information System (INIS)

    The irradiation of materials and products 'off carrier' has historically been performed using a 'drop-and-read' methodology whereby the radioisotope source is raised and lowered repeatedly until the desired absorbed dose is achieved. This approach is time consuming from both a manpower and process perspective. Static irradiation-based processes can also be costly because of the need for repeated experimental verification of target dose delivery. In our paper we address the methods used for predicting Ethicon Endo Surgery's (EES's) off-carrier absorbed dose distributions. The scenarios described herein are complex due to the fact that the on-carrier process stream exhibits a wide range of densities and dose rates. The levels of observed complexity are attributed to the 'just-in-time' production strategy and its related requirements as they apply to the programming of EES's cobalt-60 irradiators. Validation of off-carrier processing methodologies requires sophisticated parametric-based systems utilizing mathematical algorithms that predict off-carrier absorbed dose rate relative to the on-carrier process stream components. Irradiation process simulation is achieved using a point kernel computer modeling approach, coupled with database generation and maintenance. Dose prediction capabilities are validated via routine and transfer standard dosimetry

  15. Ab Initio Study of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon

    Science.gov (United States)

    Bernardi, Marco; Vigil-Fowler, Derek; Lischner, Johannes; Neaton, Jeffrey B.; Louie, Steven G.

    2014-06-01

    Hot carrier thermalization is a major source of efficiency loss in solar cells. Because of the subpicosecond time scale and complex physics involved, a microscopic characterization of hot carriers is challenging even for the simplest materials. We develop and apply an ab initio approach based on density functional theory and many-body perturbation theory to investigate hot carriers in semiconductors. Our calculations include electron-electron and electron-phonon interactions, and require no experimental input other than the structure of the material. We apply our approach to study the relaxation time and mean free path of hot carriers in Si, and map the band and k dependence of these quantities. We demonstrate that a hot carrier distribution characteristic of Si under solar illumination thermalizes within 350 fs, in excellent agreement with pump-probe experiments. Our work sheds light on the subpicosecond time scale after sunlight absorption in Si, and constitutes a first step towards ab initio quantification of hot carrier dynamics in materials.

  16. Hopping Conductivity in Low-Density Polyethylene

    OpenAIRE

    Brunson, Jerilyn; Dennison, JR

    2007-01-01

    Measurements of resistivity of low density polyethylene (LDPE) have been made using the standard constant voltage method to determine the temperature dependence of resistivity. Where electrons are assumed to serve as the primary charge carriers, their mobility is believed to be dependent on their probability of hopping between trapping sites treated as potential wells. We consider our measurements of this relatively simple polymeric material using temperature-dependant models of conduction me...

  17. Electron-phonon coupling modification and carrier mobility enhancement in poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by ultraviolet irradiation

    International Nuclear Information System (INIS)

    The effect of ultraviolet irradiation on the electrical property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films was examined. It is shown that the carrier mobility increases while the carrier density does not change substantially. The carrier mobility in PEDOT:PSS samples exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. The results demonstrate that changes in the chemical structure may lead to the modification of the electron-phonon coupling, thus increasing the carrier mobility in PEDOT:PSS

  18. Effect of an intersection of carbon nanotubes on the carrier accumulation under an external electric field

    Science.gov (United States)

    Kochi, Taketo; Okada, Susumu

    2016-08-01

    We studied the electronic structure of semiconducting carbon nanotube (CNT) thin films, in which CNTs intersect each other, under an external electric field, using first-principles total-energy calculations within the framework of the density functional theory. Our calculations show that the distribution of accumulated carriers strongly depends on the CNT species, their mutual arrangement with respect to the electrode, and carrier concentrations. Under particular conditions, an induced electric field between the CNTs is opposite to the applied field. We also showed that the quantum capacitance of the CNT thin films depends on the arrangement of the CNTs relative to the electrode.

  19. Localization of carriers in a one-dimensional electron system over liquid helium

    Science.gov (United States)

    Gladchenko, S. P.; Kovdrya, Yu. Z.; Nikolaenko, V. A.

    2000-07-01

    The mobility of carriers in a one-dimensional electron system over liquid helium has been measured at the temperature 0.5-1.7 K and for different values of linear electron density. Profiled nylon substrates with some quantity of charge deposited were used for the realization of a one-dimensional electron system. It is shown that electron mobility is dependent on the quantity of the charge on a substrate. Effects observed are explained by the localization of electrons moving in the random potential created by the substrates charge. It is supposed that at low temperatures the movement of carriers is determined by quantum effects.

  20. Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

    Science.gov (United States)

    Li, Jing; Niquet, Yann-Michel; Delerue, Christophe

    2016-06-01

    We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the current becomes spin polarized and the mean free path rises from 10 nm to micrometers. In the ferromagnetic state, the current flows through one majority-spin channel which is ballistic over micrometers and several minority-spin channels with mean free paths as low as 1 nm. These features predicted in technology-relevant conditions could be nicely exploited in spintronic devices.

  1. Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus.

    Science.gov (United States)

    Espinosa-Gongora, Carmen; Larsen, Niels; Schønning, Kristian; Fredholm, Merete; Guardabassi, Luca

    2016-01-01

    Staphylococcus aureus is presently regarded as an emerging zoonotic agent due to the spread of specific methicillin-resistant S. aureus (MRSA) clones in pig farms. Studying the microbiota can be useful for the identification of bacteria that antagonize such opportunistic veterinary and zoonotic pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium system. Carriers and non-carriers were selected on the basis of quantitative longitudinal data on S. aureus carriage in 600 pigs sampled at 20 Danish herds included in two previous studies in Denmark. Raw sequences were analysed with the BION meta package and the resulting abundance matrix was analysed using the DESeq2 package in R to identify operational taxonomic units (OTUs) with differential abundance between S. aureus carriers and non-carriers. Twenty OTUs were significantly associated to non-carriers, including species with known probiotic potential and antimicrobial effect such as lactic acid-producing isolates described among Leuconostoc spp. and some members of the Lachnospiraceae family, which is known for butyrate production. Further 5 OTUs were significantly associated to carriage, including known pathogenic bacteria such as Pasteurella multocida and Klebsiella spp. Our results show that the nasal microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate these bacteria and assess their possible antagonistic effect on S. aureus for the pursuit of new strategies to control MRSA in pig farming. PMID:27509169

  2. Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus

    Science.gov (United States)

    Espinosa-Gongora, Carmen; Larsen, Niels; Schønning, Kristian; Fredholm, Merete; Guardabassi, Luca

    2016-01-01

    Staphylococcus aureus is presently regarded as an emerging zoonotic agent due to the spread of specific methicillin-resistant S. aureus (MRSA) clones in pig farms. Studying the microbiota can be useful for the identification of bacteria that antagonize such opportunistic veterinary and zoonotic pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium system. Carriers and non-carriers were selected on the basis of quantitative longitudinal data on S. aureus carriage in 600 pigs sampled at 20 Danish herds included in two previous studies in Denmark. Raw sequences were analysed with the BION meta package and the resulting abundance matrix was analysed using the DESeq2 package in R to identify operational taxonomic units (OTUs) with differential abundance between S. aureus carriers and non-carriers. Twenty OTUs were significantly associated to non-carriers, including species with known probiotic potential and antimicrobial effect such as lactic acid-producing isolates described among Leuconostoc spp. and some members of the Lachnospiraceae family, which is known for butyrate production. Further 5 OTUs were significantly associated to carriage, including known pathogenic bacteria such as Pasteurella multocida and Klebsiella spp. Our results show that the nasal microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate these bacteria and assess their possible antagonistic effect on S. aureus for the pursuit of new strategies to control MRSA in pig farming. PMID:27509169

  3. 49 CFR 1139.22 - Revenue data for study carriers.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 8 2010-10-01 2010-10-01 false Revenue data for study carriers. 1139.22 Section... BOARD, DEPARTMENT OF TRANSPORTATION RULES OF PRACTICE PROCEDURES IN MOTOR CARRIER REVENUE PROCEEDINGS Intercity Bus Industry § 1139.22 Revenue data for study carriers. The study carriers, as identified...

  4. 76 FR 32390 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2011-06-06

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory... MCSAC will complete action on Task 11-01, regarding Patterns of Safety Violations by Motor...

  5. 75 FR 2923 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-01-19

    ... sessions announced on January 5, 2010 (75 FR 285), and elsewhere in today's Federal Register, and to... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety...

  6. Charge carrier transport in liquid crystals

    International Nuclear Information System (INIS)

    The materials exhibiting charge carrier mobility ranging from 10−3 to 0.1 cm2/Vs, i.e., between those of amorphous and crystalline materials, had been missing before the 1990s when the electronic conduction in liquid crystals was discovered. Since then, various liquid crystalline materials including discotic and calamitic liquid crystals have been studied in order to clarify their charge carrier transport properties in liquid crystalline mesophases. In this article, the historical background of the discovery of electronic conduction in liquid crystals, intrinsic and extrinsic conductions, unique properties of the charge carrier transport, the effect of molecular alignment on it, and the conduction mechanism in liquid crystalline mesophases are shortly described on the basis of the experimental and theoretical studies accumulated in these two decades, noting that the missing materials were liquid crystals. - Highlights: • Liquid crystals exhibit charge mobility ranging from 10–3 to 0.1 cm2/Vs. • Electronic (intrinsic) and ionic (extrinsic) conductions in liquid crystals • Unique charge carrier transport properties in liquid crystals • Effect of molecular alignment in mesophases on charge carrier transport • Conduction mechanism in smectic liquid crystals

  7. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  8. Carbon: Hydrogen carrier or disappearing skeleton?

    International Nuclear Information System (INIS)

    The use of liquid hydrocarbons as energy carriers implies the use of carbon as a carrier for hydrogen to facilitate hydrogen transport and storage. The current trend for liquid energy carriers used in the transport sector is to maximize the load of hydrogen on the carbon carrier. The recently developed Shell Middle Distillate Hydrogenation process for the manufacture of high quality diesel from aromatic refinery streams fits this picture. In the future, the hydrogen required to raise the product H/C ratio will be increasingly produced via gasification of large amounts of heavy residues. In the light of the strong preference towards using liquid fuels in the transport sector, the Shell Middle Distillate Synthesis process to convert natural gas into diesel of very high quality is discussed. Finally, a few comments on the use of hydrogen without a carbon carrier are made. Long lead times and the likelihood of producing the 'first' hydrogen from fossil fuel are highlighted. 13 figs., 6 tabs., 5 refs

  9. Dedicated Carrier Deployment in Heterogeneous Networks with Inter-site Carrier Aggregation

    DEFF Research Database (Denmark)

    Wang, Hua; Rosa, Claudio; Pedersen, Klaus I.

    picos with dedicated carrier deployment. Collaborative inter-site carrier aggregation (CA) is proposed in scenarios with macro+RRH deployment to make an efficient use of the fragmented spectrum from multiple cells. While in scenarios with macro+pico deployment, UEs can only connect to either the...

  10. Hot Carrier extraction with plasmonic broadband absorbers

    CERN Document Server

    Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J; Mulvaney, Paul; Gomez, Daniel E

    2016-01-01

    Hot charge carrier extraction from metallic nanostructures is a very promising approach for applications in photo-catalysis, photovoltaics and photodetection. One limitation is that many metallic nanostructures support a single plasmon resonance thus restricting the light-to-charge-carrier activity to a spectral band. Here we demonstrate that a monolayer of plasmonic nanoparticles can be assembled on a multi-stack layered configuration to achieve broad-band, near-unit light absorption, which is spatially localised on the nanoparticle layer. We show that this enhanced light absorbance leads to $\\sim$ 40-fold increases in the photon-to-electron conversion efficiency by the plasmonic nanostructures. We developed a model that successfully captures the essential physics of the plasmonic hot-electron charge generation and separation in these structures. This model also allowed us to establish that efficient hot carrier extraction is limited to spectral regions where the photons possessing energies higher than the S...

  11. Tuning Many-Body Interactions in Graphene: The Effects of Doping on Excitons and Carrier Lifetimes

    Science.gov (United States)

    Mak, Kin Fai; da Jornada, Felipe H.; He, Keliang; Deslippe, Jack; Petrone, Nicholas; Hone, James; Shan, Jie; Louie, Steven G.; Heinz, Tony F.

    2014-05-01

    The optical properties of graphene are strongly affected by electron-electron (e-e) and electron-hole (e-h) interactions. Here we tune these many-body interactions through varying the density of free charge carriers. Measurements from the infrared to the ultraviolet reveal significant changes in the optical conductivity of graphene for both electron and hole doping. The shift, broadening, and modification in shape of the saddle-point exciton resonance reflect strong screening of the many-body interactions by the carriers, as well as changes in quasiparticle lifetimes. Ab initio calculations by the GW Bethe-Salpeter equation method, which take into account the modification of both the repulsive e-e and the attractive e-h interactions, provide excellent agreement with experiment. Understanding the optical properties and high-energy carrier dynamics of graphene over a wide range of doping is crucial for both fundamental graphene physics and for emerging applications of graphene in photonics.

  12. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  13. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    Science.gov (United States)

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  14. Biogenesis of the mitochondrial phosphate carrier

    OpenAIRE

    Zara, Vincenzo; Rassow, Joachim; Wachter, Elmar; Tropschug, Maximilian; Palmieri, Ferdinando; Neupert, Walter; Pfanner, Nikolaus

    1991-01-01

    The mitochondrial phosphate carrier (PiC) is a member of the family of inner-membrane carrier proteins which are generally synthesized without a cleavable presequence. Surprisingly, the cDNA sequences of bovine and rat PiC suggested the existence of an amino-terminal extension sequence in the precursor of PiC. By expressing PiC in vitro, we found that PiC is indeed synthesized as a larger precursor. This precursor was imported and proteolytically processed by mitochondria, whereby the correct...

  15. Hot-carrier effects in MOS devices

    CERN Document Server

    Takeda, Eiji; Miura-Hamada, Akemi

    1995-01-01

    The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work

  16. Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots

    DEFF Research Database (Denmark)

    Uskov, Alexander V; Magnúsdóttir, Ingibjörg; Tromborg, Bjarne;

    2001-01-01

    Mechanisms of pure dephasing in quantum dots due to Coulomb correlations and the dynamics of carrier capture and emission are suggested, and a phenomenological model for the dephasing is developed. It is shown that, if the rates of these capture and emission processes are sufficiently high, signi......, significant homogeneous line broadening of the order of several meV can result....

  17. Spatially dispersive dynamical response of hot carriers in doped graphene

    Science.gov (United States)

    Kukhtaruk, S. M.; Kochelap, V. A.; Sokolov, V. N.; Kim, K. W.

    2016-05-01

    We study theoretically wave-vector and frequency dispersion of the complex dynamic conductivity tensor (DCT), σlm(k , ω), of doped monolayer graphene under a strong dc electric field. For a general analysis, we consider the weak ac field of arbitrary configuration given by two independent vectors, the ac field polarization and the wave vector k. The high-field transport and linear response to the ac field are described on the base of the Boltzmann kinetic equation. We show that the real part of DCT, calculated in the collisionless regime, is not zero due to dissipation of the ac wave, whose energy is absorbed by the resonant Dirac quasiparticles effectively interacting with the wave. The role of the kinematic resonance at ω =vF | k | (vF is the Fermi velocity) is studied in detail taking into account deviation from the linear energy spectrum and screening by the charge carriers. The isopower-density curves and distributions of angle between the ac current density and field vectors are presented as a map which provides clear graphic representation of the DCT anisotropy. Also, the map shows certain ac field configurations corresponding to a negative power density, thereby it indicates regions of terahertz frequency for possible electrical (drift) instability in the graphene system.

  18. The effects of loaded carrier mass and formulation mass on aerosolization efficiency in dry powder inhaler devices.

    Science.gov (United States)

    Ooi, Jesslynn; Gill, Charlotte; Young, Paul M; Traini, Daniela

    2015-01-01

    Previous studies have suggested that particle-particle impaction may influence aerosolization properties in carrier-based dry powder inhalers, through transfer of kinetic energy from large carriers to surface-deposited active drug. The importance of particle-particle collision has yet to be compared against other mechanisms that could lead to drug liberation, such as particle-wall impaction and turbulence. In particular, particle-particle collisions are difficult to model in silico due to computational restrictions. This study investigated the effects of dry powder inhaler particle-particle collisions in vitro using an established carrier-drug model dry powder inhalation formulation. Spherical polystyrene beads of median size 82.80 μm were chosen as a model carrier as they were of uniform size, shape, surface area, density, porosity and hardness and thus eliminated potential variables that would have conflicted with the study. This model carrier was geometrically blended with micronized salbutamol sulphate (loaded blend). The correlation between the mass of loaded blend (5-40 mg) in the Rotahaler® DPI device and resulting fine particle fraction (FPF) was examined at a constant flow rate of 60 L.min(-1). In a second experiment, the mass of loaded blend was kept constant and a variable amount of blank carrier particles were added to the Rotahaler® device to ascertain if additional "blank" carrier particles affected the final FPF. The efficiency of aerosolization remained constant with varying amounts of blank carrier particles as determined by the fine particle fraction of the emitted dose (FPFED) and fine particle fraction of the loaded dose (FPFLD). No statistical difference in FPFED and FPFLD values were observed for increasing masses of blank carrier. In addition, no statistical difference in FPFED and FPFLD between the two experiments was obtained. These observations suggest that particle-particle collisions are not a driving mechanism responsible for

  19. Femtosecond-scale switching based on excited free-carriers

    CERN Document Server

    Sivan, Y; Yuce, E; Mosk, A P

    2015-01-01

    We describe novel optical switching schemes operating at femtosecond time scales by employing free carrier (FC) excitation. Such unprecedented switching times are made possible by spatially patterning the density of the excited FCs. In the first realization, we rely on diffusion, i.e., on the nonlocality of the FC nonlinear response of the semiconductor, to erase the initial FC pattern and, thereby, eliminate the reflectivity of the system. In the second realization, we erase the FC pattern by launching a second pump pulse at a controlled delay. We discuss the advantages and limitations of the proposed approaches and demonstrate their potential applicability for switching ultrashort pulses propagating in silicon waveguides. We show switching efficiencies of up to $50\\%$ for $100$ fs pump pulses, which is an unusually high level of efficiency for such a short interaction time, a result of the use of the strong FC nonlinearity. Due to limitations of saturation and pattern effects, these schemes can be employed ...

  20. Free Carrier Distribution Criterion in Quantum Dot Lasers

    Directory of Open Access Journals (Sweden)

    HIFSA SHAHID

    2016-07-01

    Full Text Available The spontaneous emission spectra of a 1.28?m InAs/GaAs QD (Quantum Dot Fabry-Perot laser device has been measured under continuous wave operation at a fixed junction temperature of 300K. At low carrier densities, empirically observed static peak wavelength position and a fixed spectral shape of the spontaneous emission spectra are indicative of the random-like population distribution rather than a global Fermi level in the system. A theoretical model based on the Monte-Carlo method has been shown to have good agreement with the empirical results. In addition the evolutions of spontaneous emission spectral shapes are also explained in terms of many body effects.

  1. Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p-Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly smaller than that of n-Si,due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power,the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model,showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

  2. Effects of Disorder on Carrier Transport in Cu2 SnS3

    Science.gov (United States)

    Baranowski, Lauryn L.; McLaughlin, Kevin; Zawadzki, Pawel; Lany, Stephan; Norman, Andrew; Hempel, Hannes; Eichberger, Rainer; Unold, Thomas; Toberer, Eric S.; Zakutayev, Andriy

    2015-10-01

    Cu2SnS3 is a promising absorber material that has attracted significant interest in recent years. However, similar to Cu2 ZnSn (S ,Se )4 (CZTS), Cu2 SnS3 displays cation disorder, which complicates the scientific understanding and technological applications of these materials. In this work, we use postdeposition annealing to convert disordered Cu2 SnS3 thin films to the ordered structure. After annealing, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport is investigated by using optical-pump terahertz-probe spectroscopy, minimal differences are observed in the lifetimes of the photoexcited charge carriers in the ordered and disordered Cu2 SnS3 . By combining the experimental data with theoretical results from first-principles calculations and Monte Carlo simulations, we are able to conclude that even ostensibly "ordered" Cu2 SnS3 displays minority carrier transport properties corresponding to the disordered structure. Transmission electron microscopy investigations reveal only a very low density of planar defects (stacking faults and/or twins) in the annealed film, suggesting that these imperfections can dominate minority carrier transport even at low levels. The results of this study highlight some of the challenges in the development of Cu2 SnS3 -based photovoltaics and have implications for other disordered multinary semiconductors such as CZTS.

  3. Carrier recombination in mid-wave infrared InAs/InAsSb superlattices

    Science.gov (United States)

    Aytac, Yigit; Olson, Benjamin Varberg; Kim, Jin K.; Shaner, Eric A.; Hawkins, Sam D.; Klem, John F.; Flatté, Michael E.; Boggess, Thomas F.

    2014-03-01

    Measurements of carrier recombination rates using a temperature-dependent time-resolved differential transmission technique are reported for mid-wave infrared InAs / InAs1 - x Sbx type-2 superlattices (T2SLs). By engineering the layer widths and antimony compositions a 16K band-gap of ~ 238 meV was achieved for all five unintentionally doped T2SLs. Carrier recombination rates were determined for all five samples by fitting a rate equation model to the density and temperature dependent data. Minority-carrier lifetimes as long as 22 μs were measured at 14K, while lifetimes in excess of 2 μs were measured for all five samples at 200K. The minority-carrier lifetimes were observed to generally increase with increasing antimony content. While minority-carrier lifetimes are much longer than those observed in InAs/Ga(In)Sb T2SLs, Auger recombination processes were found to be more prominent in the Ga-free T2SLs. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This research was funded by the U.S. Government.

  4. Electric disc brakes hold nuclear aircraft carriers

    International Nuclear Information System (INIS)

    Two nuclear-powered aircraft carriers, the U.S.S. Nimitz and the soon-to-be-completed U.S.S. Dwight D. Eisenhower, use electric disc brakes to stop and hold lines on warping and mooring capstans during docking maneuvers and mooring operations

  5. Managing photons and carriers for photocatalysis

    Science.gov (United States)

    Thomann, Isabell; Robatjazi, Hossein; Bahauddin, Shah; Doiron, Chloe; Liu, Xuejun; Tumkur, Thejaswi; Wang, Wei-Ren; Wray, Parker

    While small plasmonic nanoparticles efficiently generate energetic hot carriers, light absorption in a monolayer of such particles is inefficient, and practical utilization of the hot carriers in addition requires efficient charge-separation. Here we describe our approach to address both challenges. By designing an optical cavity structure for the plasmonic photoelectrode, light absorption in these particles can be significantly enhanced, resulting in efficient hot electron generation. Rather than utilizing a Schottky barrier to preserve the energy of the carriers, our structure allows for their direct injection into the adjacent electrolyte. On the substrate side, the plasmonic particles are in contact with a wide band gap oxide film that serves as an electron blocking layer but accepts holes and transfers them to the counter electrode. The observed photocurrent spectra follow the plasmon spectrum, and demonstrate that the extracted electrons are energetic enough to drive the hydrogen evolution reaction. A similar structure can be designed to achieve broadband absorption enhancement in monolayer MoS2. Time permitting, I will discuss charge carrier dynamics in hybrid nanoparticles composed of plasmonic / two-dimensional materials, and applications of photo-induced force microscopy to study photocatalytic processes.

  6. Polyester Dendrimers: Smart Carriers for Drug Delivery

    Directory of Open Access Journals (Sweden)

    Jean–d’Amour K. Twibanire

    2014-01-01

    Full Text Available Polyester dendrimers have been shown to be outstanding candidates for biomedical applications. Compared to traditional polymeric drug vehicles, these biodegradable dendrimers show excellent advantages especially as drug delivery systems because they are non-toxic. Here, advances on polyester dendrimers as smart carriers for drug delivery applications have been surveyed. Both covalent and non-covalent incorporation of drugs are discussed.

  7. Polyester Dendrimers: Smart Carriers for Drug Delivery

    OpenAIRE

    Jean–d’Amour K. Twibanire; T. Bruce Grindley

    2014-01-01

    Polyester dendrimers have been shown to be outstanding candidates for biomedical applications. Compared to traditional polymeric drug vehicles, these biodegradable dendrimers show excellent advantages especially as drug delivery systems because they are non-toxic. Here, advances on polyester dendrimers as smart carriers for drug delivery applications have been surveyed. Both covalent and non-covalent incorporation of drugs are discussed.

  8. A new lubricant carrier for metal forming

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Bay, Niels; Tang, Peter Torben;

    2009-01-01

    A lubricant carrier for metal forming processes is developed. Surfaces with pores of micrometer size for entrapping lubricant are generated by electrochemical deposition of an alloy, consisting of two immiscible metals, of which one metal subsequently is etched away leaving 5 mu m layers with a s...... extrusion at high reduction and excessive stroke comparing with conventionally lubrication using phosphate coating and soap....

  9. Biodegradable PEG-based drug carriers

    Czech Academy of Sciences Publication Activity Database

    Pechar, Michal; Braunová, Alena; Ulbrich, Karel; Jelínková, Markéta; Říhová, Blanka; Seymour, L. W.

    Glasgow : University of Strathclyde, 2005, s. 7-9. [Conference on New Approaches to Drug Delivery "Nanomedicines of the Future". Glasgow (GB), 18.11.2005] R&D Projects: GA MŠk 1M0505 Institutional research plan: CEZ:AV0Z40500505 Keywords : biodegradable polymers * drug carriers Subject RIV: EI - Biotechnology ; Bionics

  10. Solid state cloaking for electrical charge carrier mobility control

    Science.gov (United States)

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  11. Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Kim, Yong Jin; Jang, Ho-Kyun; Jin, Jun Eon; Shin, Minju; Kim, Young Keun; Kim, Gyu-Tae

    2015-12-01

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  12. Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

    2015-12-14

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  13. Recovering phase density distribution from line density

    International Nuclear Information System (INIS)

    We present an algorithm to recover the longitudinal density distribution of the particles in a stationary bunch, from the experimentally obtained line density. This algorithm can be used as an alternative to the analytical theory

  14. Enhanced attached growth of microalgae Scenedesmus. LX1 through ambient bacterial pre-coating of cotton fiber carriers.

    Science.gov (United States)

    Zhuang, Lin-Lan; Azimi, Yaldah; Yu, Dawei; Wang, Wen-Long; Wu, Yin-Hu; Dao, Guo-Hua; Hu, Hong-Ying

    2016-10-01

    The role of bacteria/extracellular polymeric substances (EPS) coated carriers on attached microalgae growth in suspended-solid phase photobioreactor (sspBR) was assessed in this study. The results showed that pre-coating cotton with ambient bacteria and their EPS improved the attached microalgal growth by as much as 230% in terms of attached microalgae density. Additionally, the single cell dry weight, chemical composition and oxygen evolving activity of attached microalgae were significantly affected by the presence of bacteria/EPS coating on the cotton carriers. The protein content of microalgae cells cultivated in the ssPBRs with carriers coated by bacteria and sterilized bacteria were on average 26% and 15% more than uncoated carriers, respectively. Through absorbing and immobilizing nutrients from the bulk medium, the bacteria/EPS coating provided the attached microalgae with nitrogen/phosphorus for protein synthesis, especially during the late stages of batch cultivation. PMID:27416514

  15. Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher;

    2000-01-01

    The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast...... recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for...... both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low...

  16. Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration.

    Science.gov (United States)

    Madapu, Kishore K; Polaki, S R; Dhara, Sandip

    2016-07-21

    High quality InN nanoparticles are grown using an atmospheric chemical vapour deposition technique via a self-seeded catalytic approach in the temperature range of 580-650 °C. In this temperature region, the nucleation barrier of InN is overcome by seeding low density In nanoparticles prior to introduction of reactive NH3. Samples with increasing carrier densities are grown, with the help of increasing growth temperature, to understand the role of carrier density in the optical phonon structure. Near-resonance Raman spectra show completely different phonon pictures compared to those for the off-resonance spectra. A Raman forbidden mode of B1(high), because of the possible breakdown of selection rules in the near-resonance conditions, is invoked for the first time. The intensity and frequency of this mode strongly depend on the carrier concentration in the sample. In off-resonance conditions, the A1(LO) mode for the sample with higher carrier concentration is dominated by Fano interference rather than plasmon-phonon coupling. Variation of the intensity of the B1(high) mode is correlated with a band filling effect, which is substantiated by the luminescence studies of the InN samples with different carrier concentrations. PMID:27345503

  17. PAPR Reduction in OFDM Systems with Large Number of Sub-Carriers by Carrier Interferometry Approaches

    Institute of Scientific and Technical Information of China (English)

    HE Jian-hui; QUAN Zi-yi; MEN Ai-dong

    2004-01-01

    High Peak-to-Average Power Ratio (PAPR) is one of the major drawbacks of Orthogonal Frequency Division Multiplexing ( OFDM) systems. This paper presents the structures of the particular bit sequences leading to the maximum PAPR (PAPRmax) in Carrier-Interferometry OFDM (CI/OFDM) and Pseudo Orthogonal Carrier-Interferometry OFDM (PO-CI/OFDM) systems for Binary Phase Shift Keying (BPSK) modulation. Furthermore, the simulation and analysis of PAPRmax and PAPR cumulative distribution in CI/OFDM and PO-CI/OFDM systems with 2048 sub-carriers are presented in this paper. The results show that the PAPR of OFDM system with large number of sub-carriers reduced evidently via CI approaches.

  18. Effective g-factors of carriers in inverted InAs/GaSb bilayers

    International Nuclear Information System (INIS)

    We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3

  19. Effective g-factors of carriers in inverted InAs/GaSb bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Xiaoyang [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Sullivan, Gerard [Teledyne Scientific and Imaging, Thousand Oaks, California 91630 (United States); Du, Rui-Rui [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892 (United States)

    2016-01-04

    We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3.

  20. Effective g-factors of carriers in inverted InAs/GaSb bilayers

    Science.gov (United States)

    Mu, Xiaoyang; Sullivan, Gerard; Du, Rui-Rui

    2016-01-01

    We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3.

  1. LWS/SET Technology Experiment Carrier

    Science.gov (United States)

    Sherman, Barry; Giffin, Geoff

    2002-01-01

    This paper examines the approach taken to building a low-cost, modular spacecraft bus that can be used to support a variety of technology experiments in different space environments. It describes the techniques used and design drivers considered to ensure experiment independence from as yet selected host spacecraft. It describes the technology experiment carriers that will support NASA's Living With a Star Space Environment Testbed space missions. NASA has initiated the Living With a Star (LWS) Program to develop a better scientific understanding to address the aspects of the connected Sun-Earth system that affect life and society. A principal goal of the program is to bridge the gap between science, engineering, and user application communities. The Space Environment Testbed (SET) Project is one element of LWS. The Project will enable future science, operational, and commercial objectives in space and atmospheric environments by improving engineering approaches to the accommodation and/or mitigation of the effects of solar variability on technological systems. The SET Project is highly budget constrained and must seek to take advantage of as yet undetermined partnering opportunities for access to space. SET will conduct technology validation experiments hosted on available flight opportunities. The SET Testbeds will be developed in a manner that minimizes the requirements for accommodation, and will be flown as flight opportunities become available. To access the widest range of flight opportunities, two key development requirements are to maintain flexibility with respect to accommodation constraints and to have the capability to respond quickly to flight opportunities. Experiments, already developed to the technology readiness level of needing flight validation in the variable Sun-Earth environment, will be selected on the basis of the need for the subject technology, readiness for flight, need for flight resources and particular orbit. Experiments will be

  2. Detachment factors for enhanced carrier to carrier transfer of CHO cell lines on macroporous microcarriers

    OpenAIRE

    Landauer, K.; Dürrschmid, M.; Klug, H.; Wiederkum, S.; Blüml, G.; Doblhoff-Dier, O.

    2002-01-01

    In this publication different detachment factors were tested for enhancing carrier to carrier transfer for scale-up of macroporous microcarrier based bioprocesses. Two Chinese hamster ovary cell lines, CHO-K1 and a genetically engineered CHO-K1 derived cell line (CHO-MPS), producing recombinant human Arylsulfatase B, were examined. The cells were grown on Cytoline 1microcarriers (Amersham Biosciences, Uppsala, Sweden) in protein-free and chemically defined medium respectively. Fully colonised...

  3. Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

    Science.gov (United States)

    Cai, Yu; Sha, Shuang

    2016-09-01

    This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers.

  4. Benchmark and gap analysis of current mask carriers vs future requirements: example of the carrier contamination

    Science.gov (United States)

    Fontaine, H.; Davenet, M.; Cheung, D.; Hoellein, I.; Richsteiger, P.; Dejaune, P.; Torsy, A.

    2007-02-01

    In the frame of the European Medea+ 2T302 MUSCLE project, an extensive mask carriers benchmark was carried out in order to evaluate whether some containers answer to the 65nm technology needs. Ten different containers, currently used or expected in the future all along the mask supply chain (blank, maskhouse and fab carriers) were selected at different steps of their life cycle (new, aged, aged & cleaned). The most critical parameters identified for analysis versus future technologies were: automation, particle contamination, chemical contamination (organic outgassing, ionic contamination), cleanability, ESD, airtightness and purgeability. Furthermore, experimental protocols corresponding to suitable methods were then developed and implemented to test each criterion. The benchmark results are presented giving a "state of the art" of mask carriers currently available and allowing a gap analysis for the tested parameters related to future needs. This approach is detailed through the particular case of carrier contamination measurements. Finally, this benchmark / gap analysis leads to propose advisable mask carrier specifications (and the test protocols associated) on various key parameters which can also be taken as guidelines for a standardization perspective for the 65nm technology. This also indicates that none of tested carriers fulfills all the specifications proposed.

  5. Photoconductor-metal contact at higher densities.

    Science.gov (United States)

    Dussel, G. A.; Boer, K. W.; Stirn, R. J.

    1973-01-01

    The formation of space charge in the barrier region is discussed. This region extends to a distance, x-sub o, equal to 200 A plus twice the mean free path of majority carriers. The conventional transport equation can be used only for x greater than x-sub o, and the carrier density at x-sub o represents a boundary condition for the bulk. Its change as a function of applied voltage, temperature, and light intensity in photoconducting CdS is discussed. The time dependence of the space-charge formation in the region between 0 and x-sub o is analyzed. It is shown under which conditions the individuality of the metal contact is observable.

  6. Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

    OpenAIRE

    C. Maragliano; Lilliu, S.; M. S. Dahlem; Chiesa, M.; SOUIER, T.; Stefancich, M.

    2014-01-01

    In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc o...

  7. Band gap tunning in BN-doped graphene systems with high carrier mobility

    International Nuclear Information System (INIS)

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers

  8. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  9. Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

    International Nuclear Information System (INIS)

    It is known that due to the formation of in-plane local energy barrier, V-defects can screen the carriers which non-radiatively recombine in threading dislocations (TDs) and hence, enhance the internal quantum efficiency in GaN based light-emitting diodes. By a theoretical modeling capable of describing the inhomogeneous carrier distribution near the V-defect in GaN based quantum wells, we show that the efficient suppression of non-radiative (NR) recombination via TD requires the local energy barrier height of V-defect larger than ∼80 meV. The NR process in TD combined with V-defect influences the quantum efficiency mainly in the low injection current density regime suitably described by the linear dependence of carrier density. We provide a simple phenomenological expression for the NR recombination rate based on the model result

  10. 48 CFR 1615.470 - Carrier investment of FEHB funds.

    Science.gov (United States)

    2010-10-01

    ... CONTRACTING BY NEGOTIATION Contract Pricing 1615.470 Carrier investment of FEHB funds. (a) Except for contracts based on a combination of cost and price analysis (community-rated), the carrier is required...

  11. Energy carriers in Norway; Energibaerere i Norge

    Energy Technology Data Exchange (ETDEWEB)

    2008-01-15

    Within the Norwegian energy consumption, electricity is by far the most dominant energy carrier. In the last thirty years electricity has had an increased significance, while oil has been reduce. A trend that is likely to continue. Energy politics has among others these objectives: environment, reliability of supply and effective energy supply. These objectives are somewhat contradictory. In agreement with the environmental politic phasing out oil leads to a reduction in greenhouse gases. However this politic will have a local impact only effecting Norway, in a larger European connection it might lead to a larger net emission of CO{sub 2}. A political intervention in the energy market might also lead to a reduction in the energy markets effectiveness and flexibility. This report addresses this problem: If a total phase out of the stationary oil consumption is conducted, what energy carriers will this consumption convert to?

  12. Some remarks on the carrier distillation method

    International Nuclear Information System (INIS)

    The method described by SCRIBNER and MULLIN makes possible the spectrographic analysis of the refractory oxides of uranium and plutonium. It uses a distillation of the elements which is more or less selective. The influence of the carrier is the subject of as many hypotheses as there are parameters involved in the process. The measurements of the arc temperature carried out on the leading edges of the vibration bands and of certain copper lines have made it possible to show the influence of the nature of the carrier and to establish a relationship between the values of the excitation potentials of the atoms and the temperatures produced. Further, this result makes it possible to explain certain contradictions between the principle of a fractional distillation in the arc which is incompatible with the refractory properties of certain elements and their spectrographic sensitivity. (author)

  13. Carrier synchronization and detection of polyphase signals.

    Science.gov (United States)

    Lindsey, W. C.; Simon, M. K.

    1972-01-01

    Digital communication networks used for the distribution of high-speed digital information are currently the subject of design studies for many civil and military applications. This paper presents results that are useful in such studies as well as in network planning. In particular, the paper is concerned with the problems of carrier synchronization and noisy reference detection of polyphase signals. Reconstruction of coherent references for the detection of polyphase signals is considered and analyzed for three carrier reconstruction loops, namely, Nth power (multiply-and-divide) loops, generalized Costas (I-Q) loops, and extensions of data-aided (modulation wipeoff) loops. General expressions for the error probability are developed when the reconstructed reference signals are noisy.

  14. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  15. Superconductivity in carrier-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Takahiro Muranaka, Yoshitake Kikuchi, Taku Yoshizawa, Naoki Shirakawa and Jun Akimitsu

    2008-01-01

    Full Text Available We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm−3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

  16. High carrier mobilities in black diamond

    Science.gov (United States)

    Williams, Oliver A.; Jackman, Richard B.; Nebel, Christoph; Foord, John S.

    2003-03-01

    Hydrogen plasma treatment of diamond renders the surface p-type, with the carriers emerging with little thermal activation, in sharp contrast to the use of boron for the formation of p-type material. To date, it has been thought that only the highest quality 'white' polycrystalline material is useful for electronic device applications, with many regarding single-crystal diamond as ultimately the substrate material of choice. In this paper it is shown that when p-type material is produced through hydrogenation, this is not the case. 'Black' polycrystalline diamond, which can be grown much more rapidly than white, shows carrier concentrations and mobility values similar to both white polycrystalline diamond and single-crystal material. This result has important implications for the provision of low-cost black-diamond substrates for device applications.

  17. Charge density glass from fictions to facts

    International Nuclear Information System (INIS)

    Thirty years ago Fukuyama [J. Phys. Soc. Jpn. 45 (1978) 1474] predicted a transition from charge density wave (CDW) state to the charge density glass (CDG) at a finite temperature as the consequence of the competition between the uniform commensurability pinning and the random impurity pinning. We present strong evidence that the CDG phase indeed exists as a generic feature of density wave systems. However, it arises from the competition of the random impurity pinning and the electrostatic intra-CDW interaction which tends to establish a uniform phase at low temperature. The glass transition occurs at the temperature at which the free carriers cannot efficiently screen the phase distortions. The characteristic length scale of the disorder, i.e. the size of the phase coherent domains, governs the glass properties

  18. Atlas V Aft Bulkhead Carrier Rideshare System

    OpenAIRE

    Willcox, Maj Travis

    2012-01-01

    This paper gives the background and details of the Atlas V Aft Bulkhead Carrier to be flown on the National Recoinnassance Office Launch 36 with the Operationally Unique Technologies Satellite Auxiliary Payload. The CubeSats included are from a number of labs, universities and government entities for the purpose of technology demonstration, science experimentation and operational proof of concepts. This mission will pave the way for rideshare on NRO missions and other Atlas V launches.

  19. Nanogel Carrier Design for Targeted Drug Delivery

    OpenAIRE

    Eckmann, D.M.; Composto, R. J.; Tsourkas, A; Muzykantov, V. R.

    2014-01-01

    Polymer-based nanogel formulations offer features attractive for drug delivery, including ease of synthesis, controllable swelling and viscoelasticity as well as drug loading and release characteristics, passive and active targeting, and the ability to formulate nanogel carriers that can respond to biological stimuli. These unique features and low toxicity make the nanogels a favorable option for vascular drug targeting. In this review, we address key chemical and biological aspects of nanoge...

  20. Crude Carrier Consolidation and Capital Cost

    OpenAIRE

    T T Gilje; J Dinwoodie; J Challacombe

    2002-01-01

    This paper investigates the role of consolidation strategies amongst crude carrier operators anxious to reduce costs and attract institutional capital. Could consolidation combat erratic tonnage demand, mounting regulatory pressure to provide quality service at reduced costs, rising costs of finance and unpredictable long-term returns that deter institutional capital? A questionnaire survey of capital providers' and charterers' attitudes towards consolidation found that long-term vessel emplo...

  1. Electroactuation with Single Charge Carrier Ionomers

    OpenAIRE

    Lee, Alpha A; Colby, Ralph H.; Kornyshev, Alexei A.

    2012-01-01

    A simple theory of electromechanical transduction for single-charge-carrier double-layer electroactuators is developed, in which the ion distribution and curvature are mutually coupled. The obtained expressions for the dependence of curvature and charge accumulation on the applied voltage, as well as the electroactuation dynamics, are compared with literature data. The mechanical- or sensor- performance of such electroactuators appears to be determined by just three cumulative parameters, wit...

  2. Uptake Carriers and Oncology Drug Safety

    OpenAIRE

    Sprowl, Jason A.; Sparreboom, Alex

    2014-01-01

    Members of the solute carrier (SLC) family of transporters are responsible for the cellular influx of a broad range of endogenous compounds and xenobiotics in multiple tissues. Many of these transporters are highly expressed in the gastrointestinal tract, liver, and kidney and are considered to be of particular importance in governing drug absorption, elimination, and cellular sensitivity of specific organs to a wide variety of oncology drugs. Although the majority of studies on the interacti...

  3. Software defined networking: meeting carrier grade requirements

    OpenAIRE

    Staessens, Dimitri; Sharma, Sachin; Colle, Didier; Pickavet, Mario; Demeester, Piet

    2011-01-01

    Software Defined Networking is a networking paradigm which allows network operators to manage networking elements using software running on an external server. This is accomplished by a split in the architecture between the forwarding element and the control element. Two technologies which allow this split for packet networks are ForCES and Openflow. We present energy efficiency and resilience aspects of carrier grade networks which can be met by Openflow. We implement flow restoration and ru...

  4. Food proteins as potential carriers for phenolics

    OpenAIRE

    Bohin, M.C.

    2013-01-01

    The development of phenolic-rich functional foods is often limited by the off-tastes of phenolics that might be counteracted by sequestering these compounds using a carrier, thereby preventing them to interact with bitter taste receptors and salivary proteins. A range of common animal food proteins were tested for binding of phenolics. It appeared that a proline-rich open protein structure, as in β-casein, favored binding of phenolics. Globular proteins other than bovine serum albumin sh...

  5. Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

    Science.gov (United States)

    Inaba, Masahiro; Todoroki, Soichiro; Nakada, Kazuyoshi; Miyajima, Shinsuke

    2016-04-01

    We investigated the effects of annealing on the temperature-dependent minority carrier lifetime of a crystalline silicon wafer passivated by hydrogenated amorphous silicon oxide. The annealing significantly affects the lifetime and its temperature dependence. Our device simulations clearly indicate that valence band offset significantly affects the temperature dependence. We also found a slight increase in the interface defect density after annealing.

  6. The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

    NARCIS (Netherlands)

    Hurley, Paul K.; Negara, Adi; Hemert, van Tom; Cherkaoui, Karim

    2009-01-01

    In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8x1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the den

  7. 24 CFR 17.46 - Claims involving carriers or insurers.

    Science.gov (United States)

    2010-04-01

    ... amount recoverable from the carrier or insurer may result in reducing the amount recoverable from the Government by the maximum amount which would have been recoverable from the carrier or insurer, had the claim... from the carrier or insurer before his claim under this subpart is settled, the amount or...

  8. 44 CFR 11.75 - Claims involving carriers and insurers.

    Science.gov (United States)

    2010-10-01

    ... prosecute rights available against a carrier or insurer and to collect the amount recoverable from the carrier or insurer may result in reducing the amount recoverable from the Government by the maximum amount which would have been recoverable from the carrier or insurer, had the claim been timely or...

  9. 29 CFR 15.25 - Claims involving carriers or insurers.

    Science.gov (United States)

    2010-07-01

    ... carrier or insurer and to collect the amount recoverable from the carrier or insurer may result in reducing the amount recoverable from the Government by the maximum amount which would have been recoverable... the loss from the carrier or insurer before his or her claim under this subpart is settled, the...

  10. A Multi-Carrier Scheduling Algorithm for LTE-Advanced

    DEFF Research Database (Denmark)

    Vulpe, Alexander; Mihovska, Albena D.; Prasad, Ramjee; Fratu, Octavian

    LTE-Advanced aims to provide a transmission bandwidth of 100 MHz by using Carrier Aggregation to aggregate LTE Rel. 8 carriers. In order to increase the system capacity, resource allocation becomes a very good tool, and, in the context of the existence of multiple Component Carriers in LTE...

  11. Terahertz carrier dynamics in graphene and graphene nanostructures

    DEFF Research Database (Denmark)

    Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan;

    2014-01-01

    Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

  12. Legionella pneumophila Secretes a Mitochondrial Carrier Protein during Infection

    OpenAIRE

    Pavel Dolezal; Margareta Aili; Janette Tong; Jhih-Hang Jiang; Marobbio, Carlo M.T.; Sau Fung Lee; Ralf Schuelein; Simon Belluzzo; Eva Binova; Aurelie Mousnier; Gad Frankel; Giulia Giannuzzi; Ferdinando Palmieri; Kipros Gabriel; Thomas Naderer

    2012-01-01

    Author Summary Mitochondrial carrier proteins evolved during endosymbiosis to transport substrates across the mitochondrial inner membrane. As such the proteins are associated exclusively with eukaryotic organisms. Despite this, we identified putative mitochondrial carrier proteins in the genomes of different intracellular bacterial pathogens, including Legionella pneumophila, the causative agent of Legionnaire's disease. We named the mitochondrial carrier protein from L. pneumophila LncP and...

  13. Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

    Science.gov (United States)

    Westland, Duncan James

    Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

  14. Literature review of the passenger airline business models: Full service carrier, low-cost carrier and charter airlines

    NARCIS (Netherlands)

    Carmona Benitez, R.B.; Lodewijks, G.

    2008-01-01

    The deregulation and liberalization of the air transportation industry have developed three main passenger business models: full service carriers, low-cost carriers, and charter airlines. Deregulation removed regulated fares and routes increasing competition and yields. Airlines business models main

  15. Influence of ultrafast carrier dynamics on semiconductor absorption spectra

    International Nuclear Information System (INIS)

    In this thesis, we present a theoretical description of the many-body effects in semi-conductor quantum wells and the role they play in the absorption phenomenon. The optical properties of semiconductors and their connections to the thermodynamic properties of the quasi-2D electron-hole plasma are studied in both nonequilibrium and equilibrium regimes. This work was motivated by a series of pump and probe experiments with spin-selective excitation that were performed at Heriot-Watt. The interpretation of the experimental results is non-trivial given the substantial influence of Coulomb and many-body effects which give rise to a rich variety of broadening and energy renormalizations, and hence places heavy demands on the modeling. We constructed a simple model to describe the nonequilibrium thermodynamics of the hot electron/hole plasma. We accounted for various dynamical processes such as: relaxation of the carrier distributions, thermalization, plasma cooling, carrier spin-flip, recombination (radiative and nonradiative) and light hole scattering into heavy holes. A full microscopic treatment of the many-body problem being computationally prohibitive, we focused on a phenomenological approach using rate equations and the associated characteristic times for each of the dynamical process included in our analysis. We computed the time dependent energy renormalization and bleaching of the excitonic resonances by solving the semiconductor Bloch equations together with the set of coupled rate equations. We obtained a good qualitative agreement with experiments and further insight into the interplay between the various dynamical processes by varying the phenomenological parameters entering the rate equations. In particular we found that the carrier spin-flip occurs on a relatively long time scale (several tens of picoseconds) compared to the carrier distributions relaxation and thermalization (a picosecond or less). We also could monitor the time evolution of the plasma

  16. Solid lipid nanoparticles and nanostructured lipid carriers--innovative generations of solid lipid carriers.

    Science.gov (United States)

    Shidhaye, S S; Vaidya, Reshma; Sutar, Sagar; Patwardhan, Arati; Kadam, V J

    2008-10-01

    The first generation of solid lipid carrier systems in nanometer range, Solid Lipid Nanoparticles (SLN), was introduced as an alternative to liposomes. SLN are aqueous colloidal dispersions, the matrix of which comprises of solid biodegradable lipids. SLN are manufactured by techniques like high pressure homogenization, solvent diffusion method etc. They exhibit major advantages such as modulated release, improved bioavailability, protection of chemically labile molecules like retinol, peptides from degradation, cost effective excipients, improved drug incorporation and wide application spectrum. However there are certain limitations associated with SLN, like limited drug loading capacity and drug expulsion during storage, which can be minimized by the next generation of solid lipids, Nanostructured lipid carriers (NLC). NLC are lipid particles with a controlled nanostructure that improves drug loading and firmly incorporates the drug during storage. Owing to their properties and advantages, SLN and NLC may find extensive application in topical drug delivery, oral and parenteral administration of cosmetic and pharmaceutical actives. Cosmeceuticals is emerging as the biggest application target of these carriers. Carrier systems like SLN and NLC were developed with a perspective to meet industrial needs like scale up, qualification and validation, simple technology, low cost etc. This paper reviews present status of SLN and NLC as carrier systems with special emphasis on their application in Cosmeceuticals; it also gives an overview about various manufacturing techniques of SLN and NLC. PMID:18855604

  17. Laboratory Density Functionals

    OpenAIRE

    Giraud, B. G.

    2007-01-01

    We compare several definitions of the density of a self-bound system, such as a nucleus, in relation with its center-of-mass zero-point motion. A trivial deconvolution relates the internal density to the density defined in the laboratory frame. This result is useful for the practical definition of density functionals.

  18. Performance of Uplink Carrier Aggregation in LTE-Advanced Systems

    DEFF Research Database (Denmark)

    Wang, Hua; Rosa, Claudio; Pedersen, Klaus

    2010-01-01

    paper, we evaluate the performance of uplink CA in LTE-Advanced systems with different CC allocation schemes. We first present the radio resource management (RRM) framework of multi-component carrier LTE-Advanced systems, with special attention on CC selection, adaptive transmission bandwidth, and......Carrier aggregation (CA) has been proposed to aggregate two or more component carriers (CCs) to support a much wider transmission bandwidth for LTE-Advanced systems. With carrier aggregation, it is possible to schedule a user equipment (UE) on multiple component carriers simultaneously. In this...... traffic conditions....

  19. Modulation Based on Probability Density Functions

    Science.gov (United States)

    Williams, Glenn L.

    2009-01-01

    A proposed method of modulating a sinusoidal carrier signal to convey digital information involves the use of histograms representing probability density functions (PDFs) that characterize samples of the signal waveform. The method is based partly on the observation that when a waveform is sampled (whether by analog or digital means) over a time interval at least as long as one half cycle of the waveform, the samples can be sorted by frequency of occurrence, thereby constructing a histogram representing a PDF of the waveform during that time interval.

  20. Carrier Load Balancing and Packet Scheduling for Multi-Carrier Systems

    DEFF Research Database (Denmark)

    Wang, Yuanye; Pedersen, Klaus; Sørensen, Troels Bundgaard;

    2010-01-01

    Abstract-In this paper we focus on resource allocation for next generation wireless communication systems with aggregation of multiple Component Carriers (CCs), i.e., how to assign the CCs to each user, and how to multiplex multiple users in each CC. We first investigate two carrier load balancing...... methods for allocating the CCs to the users- Round Robin (RR) and Mobile Hashing (MH) balancing by means of a simple theoretical formulation, as well as system level simulations. At Layer-2 we propose a simple cross-CC packet scheduling algorithm that improves the coverage performance and the resource...... allocation fairness among users, as compared to independent scheduling per CC. The Long Term Evolution (LTE)-Advanced is selected for the case study of a multi-carrier system. In such a system, RR provides better performance than MH balancing, and the proposed simple scheduling algorithm is shown to be...

  1. Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion.

    Science.gov (United States)

    Matsubara, Kohei; Abe, Kentaro; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-04-01

    Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory is appropriate to interpret the carrier transport in anisotropic TIPS pentacene thin film. TRM-SHG method is a facile and effective way to directly visualize transport process in anisotropic materials and to evaluate injection and transport processes simultaneously. PMID:27451638

  2. A self-consistent first-principle based approach to model carrier mobility in organic materials

    Science.gov (United States)

    Meded, Velimir; Friederich, Pascal; Symalla, Franz; Neumann, Tobias; Danilov, Denis; Wenzel, Wolfgang

    2015-12-01

    Transport through thin organic amorphous films, utilized in OLEDs and OPVs, has been a challenge to model by using ab-initio methods. Charge carrier mobility depends strongly on the disorder strength and reorganization energy, both of which are significantly affected by the details in environment of each molecule. Here we present a multi-scale approach to describe carrier mobility in which the materials morphology is generated using DEPOSIT, a Monte Carlo based atomistic simulation approach, or, alternatively by molecular dynamics calculations performed with GROMACS. From this morphology we extract the material specific hopping rates, as well as the on-site energies using a fully self-consistent embedding approach to compute the electronic structure parameters, which are then used in an analytic expression for the carrier mobility. We apply this strategy to compute the carrier mobility for a set of widely studied molecules and obtain good agreement between experiment and theory varying over several orders of magnitude in the mobility without any freely adjustable parameters. The work focuses on the quantum mechanical step of the multi-scale workflow, explains the concept along with the recently published workflow optimization, which combines density functional with semi-empirical tight binding approaches. This is followed by discussion on the analytic formula and its agreement with established percolation fits as well as kinetic Monte Carlo numerical approaches. Finally, we skatch an unified multi-disciplinary approach that integrates materials science simulation and high performance computing, developed within EU project MMM@HPC.

  3. A self-consistent first-principle based approach to model carrier mobility in organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Meded, Velimir; Friederich, Pascal; Symalla, Franz; Neumann, Tobias; Danilov, Denis; Wenzel, Wolfgang [Institute of Nanotechnology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2015-12-31

    Transport through thin organic amorphous films, utilized in OLEDs and OPVs, has been a challenge to model by using ab-initio methods. Charge carrier mobility depends strongly on the disorder strength and reorganization energy, both of which are significantly affected by the details in environment of each molecule. Here we present a multi-scale approach to describe carrier mobility in which the materials morphology is generated using DEPOSIT, a Monte Carlo based atomistic simulation approach, or, alternatively by molecular dynamics calculations performed with GROMACS. From this morphology we extract the material specific hopping rates, as well as the on-site energies using a fully self-consistent embedding approach to compute the electronic structure parameters, which are then used in an analytic expression for the carrier mobility. We apply this strategy to compute the carrier mobility for a set of widely studied molecules and obtain good agreement between experiment and theory varying over several orders of magnitude in the mobility without any freely adjustable parameters. The work focuses on the quantum mechanical step of the multi-scale workflow, explains the concept along with the recently published workflow optimization, which combines density functional with semi-empirical tight binding approaches. This is followed by discussion on the analytic formula and its agreement with established percolation fits as well as kinetic Monte Carlo numerical approaches. Finally, we skatch an unified multi-disciplinary approach that integrates materials science simulation and high performance computing, developed within EU project MMM@HPC.

  4. A self-consistent first-principle based approach to model carrier mobility in organic materials

    International Nuclear Information System (INIS)

    Transport through thin organic amorphous films, utilized in OLEDs and OPVs, has been a challenge to model by using ab-initio methods. Charge carrier mobility depends strongly on the disorder strength and reorganization energy, both of which are significantly affected by the details in environment of each molecule. Here we present a multi-scale approach to describe carrier mobility in which the materials morphology is generated using DEPOSIT, a Monte Carlo based atomistic simulation approach, or, alternatively by molecular dynamics calculations performed with GROMACS. From this morphology we extract the material specific hopping rates, as well as the on-site energies using a fully self-consistent embedding approach to compute the electronic structure parameters, which are then used in an analytic expression for the carrier mobility. We apply this strategy to compute the carrier mobility for a set of widely studied molecules and obtain good agreement between experiment and theory varying over several orders of magnitude in the mobility without any freely adjustable parameters. The work focuses on the quantum mechanical step of the multi-scale workflow, explains the concept along with the recently published workflow optimization, which combines density functional with semi-empirical tight binding approaches. This is followed by discussion on the analytic formula and its agreement with established percolation fits as well as kinetic Monte Carlo numerical approaches. Finally, we skatch an unified multi-disciplinary approach that integrates materials science simulation and high performance computing, developed within EU project MMM@HPC

  5. Probing ultrafast carrier dynamics, nonlinear absorption and refraction in core–shell silicon nanowires

    Indian Academy of Sciences (India)

    Sunil Kumar; M Khorasaninejad; M M Adachi; K S Karim; S S Saini; A K Sood

    2012-09-01

    We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state-filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photogenerated carrier density. Independent experimental results on crystalline silicon-on-sapphire (SOS) help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single-beam z-scan nonlinear transmission experiments at 1.57 eV in both open- and close-aperture configurations yield two-photon absorption coefficient (∼3 cm/GW) and nonlinear refraction coefficient (−2.5 × 10−4 cm2 /GW).

  6. Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells

    International Nuclear Information System (INIS)

    To address the carrier extraction mechanism that determines the fundamental characteristics, such as current density, open circuit voltage, and fill factor in nanostructure-based solar cells, we performed photoluminescence (PL) decay measurements of the Ge/Si quantum wells (QWs) in crystalline-silicon (c-Si) solar cells. We found that the PL decay time of Ge/Si QWs depends on the temperature and the applied electric field; this dependence reflects the carrier separation characteristics of electron–hole pairs in Ge/Si QWs. Above ∼ 40 K, the electron–hole pairs are rapidly separated by the thermal excitation and the built-in electric field of c-Si solar cells. In contrast, at 20 K the PL decay time remains almost unchanged for an applied electric field of up to ± 1 V. These results indicate that the electrons confined in the type-II band offsets could be thermally excited and then extracted by an applied electric field. - Highlights: • Carrier extraction mechanism in nanostructure-based solar cells • Photoluminescence dynamics in Ge/Si quantum wells in Si solar cells • Carrier separation characteristics of electron-hole pairs in type-II Ge/Si QWs

  7. How Europe's Low-Cost Carriers Sidestepped Traditional Carriers' Competitive Advantages

    DEFF Research Database (Denmark)

    Hvass, Kristian Anders

    The initial appearance of U.S. low-cost carriers forced incumbents to create new forms of competitive advantage. These were successful hindrances for nearly two decades. Concurrently, incumbents in Europe implemented similar tools, although within a regulated market. However, Europe's low...... sidestepped traditional carriers' competitive advantages.......-cost airlines were more successful and had a greater initial impact in their early years than their U.S. compatriots. This paper will attempt to highlight some of the differences between the two markets and explain why European low-cost airlines had more advantages following their market deregulation and...

  8. Studies on carrier free promethium-147

    International Nuclear Information System (INIS)

    The present investigation was intended to study the state of Pm-147 in solution and its adsorbed state on membrane filters by varying the concentrations of Pm-147 solution and its pH. Also, the study on the coprecipitation of Pm-147 with Fe(OH)3 was carried out by varying amounts of Fe(OH)3 and pH of the solution. The carrier-free Pm-147 exists in an ionic state of pm3+ in solution, and is adsorbed on membrane filter in filtration process. The adsorbed state of Pm-147 on the membrane filter shows various ionic state at a constant ionic strength of 0.1M NaCl, that is, Pm3+ state exists until pH value of 5.0, then gradually Pm(OH)2+ state appears between pH value of 5.0 to 6.0, and the state of Pm(OH)2+ and Pm(OH)3 would be expected at the higher pH value of 6.0. Coprecipitation of Pm-147 on Fe(OH)3 is an adsorption penomenon in an ionic state of Pm3+ in acidic condition. At higher pH and larger amount of Fe carrier, the adsorbed state of Pm-147 shows Pm(OH)2+ and Pm(OH)2+ state. As a results of the present studies, it is seen that the characteristic of carrier free radioisotopes is not due to the radioactivity, but due to the adsorption of ultramicroquantity of radioisotopes. Therefore, the knowledge on the ultramicroquantity of radioisotopes could help for the solution of decontamination in handing and chemical procedure with radioisotopes. (author)

  9. Change of carrier density at the pseudogap critical point of a cuprate superconductor

    OpenAIRE

    Badoux, S.; Tabis, W.; Laliberté, F.; Grissonnanche, G.; Vignolle, B.; Vignolles, D.; Béard, J.; Bonn, D. A.; Hardy, W.N.; Liang, R.; Doiron-Leyraud, N.; Taillefer, Louis; Proust, Cyril

    2015-01-01

    The pseudogap is a central puzzle of cuprate superconductors. Its connection to the Mott insulator at low doping $p$ remains ambiguous and its relation to the charge order that reconstructs the Fermi surface at intermediate $p$ is still unclear. Here we use measurements of the Hall coefficient in magnetic fields up to 88 T to show that Fermi-surface reconstruction by charge order in YBa$_2$Cu$_3$O$_y$ ends sharply at a critical doping $p = 0.16$, distinctly lower than the pseudogap critical p...

  10. Oxide 2D electron gases as a route for high carrier densities on (001) Si

    Energy Technology Data Exchange (ETDEWEB)

    Kornblum, Lior; Jin, Eric N.; Kumah, Divine P.; Walker, Fred J. [Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06511 (United States); Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States); Ernst, Alexis T.; Broadbridge, Christine C. [Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06511 (United States); Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515 (United States); Ahn, Charles H. [Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06511 (United States); Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States); Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511 (United States)

    2015-05-18

    Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO{sub 3}-SrTiO{sub 3} on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 10{sup 13} cm{sup −2} electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.

  11. Oxide 2D electron gases as a route for high carrier densities on (001) Si

    International Nuclear Information System (INIS)

    Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO3-SrTiO3 on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 1013 cm−2 electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system

  12. Ionic liquid based lithium battery electrolytes: charge carriers and interactions derived by density functional theory calculations.

    Science.gov (United States)

    Angenendt, Knut; Johansson, Patrik

    2011-06-23

    The solvation of lithium salts in ionic liquids (ILs) leads to the creation of a lithium ion carrying species quite different from those found in traditional nonaqueous lithium battery electrolytes. The most striking differences are that these species are composed only of ions and in general negatively charged. In many IL-based electrolytes, the dominant species are triplets, and the charge, stability, and size of the triplets have a large impact on the total ion conductivity, the lithium ion mobility, and also the lithium ion delivery at the electrode. As an inherent advantage, the triplets can be altered by selecting lithium salts and ionic liquids with different anions. Thus, within certain limits, the lithium ion carrying species can even be tailored toward distinct important properties for battery application. Here, we show by DFT calculations that the resulting charge carrying species from combinations of ionic liquids and lithium salts and also some resulting electrolyte properties can be predicted. PMID:21591707

  13. Carbon-neutral fuels and energy carriers

    CERN Document Server

    Muradov, Nazim Z

    2011-01-01

    Concerns over an unstable energy supply and the adverse environmental impact of carbonaceous fuels have triggered considerable efforts worldwide to find carbon-free or low-carbon alternatives to conventional fossil fuels. Carbon-Neutral Fuels and Energy Carriers emphasizes the vital role of carbon-neutral energy sources, transportation fuels, and associated technologies for establishing a sustainable energy future. Each chapter draws on the insight of world-renowned experts in such diverse fields as photochemistry and electrochemistry, solar and nuclear energy, biofuels and synthetic fuels, ca

  14. Recent advancements in the cardiovascular drug carriers.

    Science.gov (United States)

    Singh, Baljeet; Garg, Tarun; Goyal, Amit K; Rath, Goutam

    2016-01-01

    Cardiovascular disease is the disease that affects the cardiovascular system, vascular diseases of the brain and kidney, and peripheral arterial disease. Despite of all advances in pharmacological and clinical treatment, heart failure is a leading cause of morbidness and mortality worldwide. Many new therapeutic advance strategies, including cell transplantation, gene delivery or therapy, and cytokines or other small molecules, have been research to treat heart failure. The main aim of this review article is to focus on nano carriers advancement and addressing the problems associated with old and modern therapeutics such as nonspecific effects and poor stability. PMID:25046615

  15. Investigation of sugar sulfur carrier in nickel

    International Nuclear Information System (INIS)

    For the purposes of galvanotechnics it is necessary to have nickel which is easely subjected to the anode dissolving (the so called depolarized nickel). In the industry, nickel of such a quality is produced by the method of electrolytic sedimentation from the nickel solution in the presence of sulfur carriers, usually in the presence of saccharin. To study behaviour of saccharin in the process of electrolysis, investigations of saccharin labelled by sulfur-35 have been done. These investigations have permitted to determine the type and quantity of products of decomposition formed, as well as to determine possibilities for rising the quantity of introducer sulfur due to the variants of technological process

  16. 77 FR 60507 - Motor Carrier Safety Advisory Committee (MCSAC): Public Subcommittee Meeting

    Science.gov (United States)

    2012-10-03

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee (MCSAC): Public Subcommittee Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Meeting of Compliance, Safety, Accountability (CSA) Subcommittee of Motor Carrier Safety...

  17. A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

    International Nuclear Information System (INIS)

    We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm−2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies

  18. Tailoring the core electron density in modulation-doped core‑multi-shell nanowires

    Science.gov (United States)

    Buscemi, Fabrizio; Royo, Miquel; Goldoni, Guido; Bertoni, Andrea

    2016-05-01

    We show how a proper radial modulation of the composition of core-multi-shell nanowires (NWs) critically enhances the control of the free-carrier density in the high-mobility core with respect to core‑single-shell structures, thus overcoming the technological difficulty of fine tuning the remote doping density. We calculate the electron population of the different NW layers as a function of the doping density and of several geometrical parameters by means of a self-consistent Schrödinger–Poisson approach: free carriers tend to localize in the outer shell and screen the core from the electric field of the dopants.

  19. Spatial density profile of electrons near the LaAlO3/SrTiO3 heterointerface revealed by time-resolved photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    The depth profile of the electron density near the LaAlO3/SrTiO3 heterointerface has been studied by means of time-resolved photoluminescence (PL) spectroscopy. A broad blue PL band is observed at 2.9 eV, originating from the two-carrier radiative recombination of interface-induced electrons and photoexcited holes. The PL lifetime of LaAlO3/SrTiO3 heterointerface is dominated by the three-carrier Auger recombination of electrons and holes and is sensitive to electron density. We tuned the probing depth by changing the excitation photon energy and evaluated the carrier-density profile using the relation between the carrier density and the PL lifetime. Our non-contact probe method based on PL spectroscopy indicates that the carriers are confined within several nanometers in depth near the LaAlO3/SrTiO3 heterostructures

  20. A charge carrier transport model for donor-acceptor blend layers

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, Janine, E-mail: janine.fischer@iapp.de; Widmer, Johannes; Koerner, Christian; Vandewal, Koen; Leo, Karl, E-mail: leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Kleemann, Hans [Novaled GmbH, Dresden (Germany); Tress, Wolfgang, E-mail: leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Laboratoire de Photonique et Interfaces, École polytechnique fédérale de Lausanne, 1015 Lausanne (Switzerland); Riede, Moritz [Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Physics Department, University of Oxford, Oxford OX1 3PU (United Kingdom)

    2015-01-28

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C{sub 60} in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (E{sub t} = 0.14 eV, N{sub t} = 1.2 × 10{sup 18 }cm{sup −3}) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer.

  1. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

    Science.gov (United States)

    El-Ghoroury, Hussein S.; Yeh, Milton; Chen, J. C.; Li, X.; Chuang, Chih-Li

    2016-07-01

    Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

  2. A charge carrier transport model for donor-acceptor blend layers

    International Nuclear Information System (INIS)

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C60 in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (Et = 0.14 eV, Nt = 1.2 × 1018 cm−3) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer

  3. Theory of anisotropic diamagnetism, local moment magnetization and carrier spin-polarization in Pb1-EuTe

    Indian Academy of Sciences (India)

    R C Patnaik; R K Das; R L Hota; G S Tripathi

    2001-10-01

    We present theoretical analyses of anisotropic lattice diamagnetism, magnetization due to magnetic ions and carrier spin-polarization in the diluted magnetic semiconductor, Pb1-EuTe. The lattice diamagnetism results from orbital susceptibility due to inter band effects and spin-orbit contributions. The spin-orbit contribution is found to be dominant. However, both the contributions show pronounced anisotropy. With increase inx, the diamagnetism decreases. We consider contributions from randomly distributed isolated magnetic ions and clusters of pairs and triads for the local moment magnetization. The isolated magnetic-ion contribution is the dominant one. We calculate the magnetization for two typical magnetic ion concentrations: = 0.03 and = 0.06. Temperature dependence of the magnetization is also considered. Apart from lattice and localized magnetic ions, the carrier contribution to the spin-density is also calculated for a carrier density of = 1018 cm-3. The relative spin-density of carriers increases with increase in the magnetic field strength and magnetic ion concentration. The agreement with experiment where available is reasonably good.

  4. Generalized Carrier to Interference Ratio Analysis for the Shotgun Cellular System

    CERN Document Server

    Madhusudhanan, Prasanna; Liu, Youjian; Brown, Timothy X; Baker, Kenneth

    2010-01-01

    In this paper, the performance of cellular systems in which the base-stations (BS) are randomly placed (so-called shotgun cellular system, SCS) is studied. Previous results for a uniform 2-dimensional distribution of BS are generalized to non-uniform placement of BS in any dimension. The carrier-to-interference ratio (CIR) and the carrier-to-interference-plus-noise ratio (CINR) are analyzed for dense and sparse BS density cellular systems, respectively. A semi-analytical expression for the tail probability of the CIR is derived. Additionally, a tool for comparing the CIR performances of two SCSs based on BS densities is presented. With these results, we completely characterize the performance of a SCS with an arbitrary BS density function. Next, a SCS affected by random shadow fading is shown to be equivalent to another SCS without shadow fading and a different BS density function, and hence the performance of a uniform l-D SCS is independent of shadow fading. Thus, for a sparse uniform l-D SCS, the effect of...

  5. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    International Nuclear Information System (INIS)

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al2O3 and Al2O3/HfO2 stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 1012 cm−2 and 0.7 × 1012 cm−2 are determined for Al2O3 layers without and with an ultra-thin HfO2 interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 1010 eV−1 cm−2 for the Al2O3 sample with HfO2 interface

  6. Gamma herpesvirus carrier status of captive artiodactyls.

    Science.gov (United States)

    Flach, E J; Reid, H; Pow, I; Klemt, A

    2002-08-01

    Between 1998 and 2000, 103 individuals of 19 species of the order Artiodactyla at Whipsnade Wild Animal Park were tested for evidence of infection with gamma herpesviruses in order to distinguish between species which are susceptible to malignant catarrhal fever (MCF), caused by alcelaphine herpesvirus-1 (AlHV-1) of wildebeest (Connochaetes sp.) or ovine herpesvirus-2 (OvHV-2) of domestic sheep, and species which carry related viruses sub-clinically. Gamma herpesvirus DNA was detected in the known, or suspected, carrier species: roan antelope (Hippotragus equinus), scimitar-horned oryx (Oryx dammah), gemsbok (Oryx gazella), musk ox (Ovibos muschatus) and mouflon (Ovis musimon). In six other species: lowland anoa (Bubalus depressicornis) yak (Bos grunniens), sitatunga (Tragelaphus spekei), greater kudu (Tragelaphus strepsiceros), waterbuck (Kobus ellipsiprymnus) and Nile lechwe (Kobus megaceros), DNA was present in some newborn calves and over 30% of adults, strongly suggesting a carrier state. In contrast five Père David's deer (Elaphurus davidianus) and two swamp deer (Cervus duvauceli) died of MCF during the study. A virus isolated from scimitar-horned oryx calves produced cytopathic effects in scimitar-horned oryx kidney cell-culture and caused MCF in a rabbit. PMID:12208112

  7. Probiotics and immunosenescence: cheese as a carrier.

    Science.gov (United States)

    Ibrahim, Fandi; Ruvio, Suvi; Granlund, Linda; Salminen, Seppo; Viitanen, Matti; Ouwehand, Arthur C

    2010-06-01

    Oral intake of specific probiotics has been reported to enhance the immunity of the elderly. Earlier studies have used milk or yoghurt as a probiotic carrier. We chose a commercial probiotic cheese to evaluate its potential as a probiotic food. Thirty-one healthy elderly volunteers (21 female, 10 male) aged from 72 to 103 (median 86) consumed a commercial probiotic cheese containing approximately 10(9) CFU day(-1) of Lactobacillus rhamnosus HN001 and Lactobacillus acidophilus NCFM. The 4-week probiotic intervention was preceded by a 2-week consumption of probiotic-free cheese (run-in) and followed by a 4-week wash-out period with the same control cheese. The cytotoxicity of peripheral blood mononuclear cells (PBMCs), the relative numbers of natural killer (NK) and NKT cells in the total PBMCs, and phagocytic activity were assessed. Consumption of the probiotic cheese significantly increased the cytotoxicity of NK cells. A significant increase in phagocytosis was observed for both the control and the probiotic cheese. Cheese was found to be an effective carrier for the study of probiotics, and daily consumption of the probiotic enhanced parameters of innate immunity in elderly volunteers. It remains to be determined whether this enhancement correlates with a beneficial effect on the health of the elderly population. PMID:20236323

  8. Analysing the risk of LNG carrier operations

    International Nuclear Information System (INIS)

    This paper presents a generic, high-level risk assessment of the global operation of ocean-going liquefied natural gas (LNG) carriers. The analysis collects and combines information from several sources such as an initial hazid, a thorough review of historic LNG accidents, review of previous studies, published damage statistics and expert judgement, and develops modular risk models for critical accident scenarios. In accordance with these risk models, available information from different sources has been structured in the form of event trees for different generic accident categories. In this way, high-risk areas pertaining to LNG shipping operations have been identified. The major contributions to the risk associated with LNG shipping are found to stem from five generic accident categories, i.e. collision, grounding, contact, fire and explosion, and events occurring while loading or unloading LNG at the terminal. Of these, collision risk was found to be the highest. According to the risk analysis presented in this paper, both the individual and the societal risk level associated with LNG carrier operations lie within the As Low As Reasonable Practicable (ALARP) area, meaning that further risk reduction should be required only if available cost-effective risk control options could be identified. This paper also includes a critical review of the various components of the risk models and hence identifies areas of improvements and suggests topics for further research

  9. Influence of carrier on the performance of dry powder inhalers.

    Science.gov (United States)

    Saint-Lorant, G; Leterme, P; Gayot, A; Flament, M P

    2007-04-01

    The aim of this work is to study carriers which can become alternatives to monohydrate lactose in dry powder inhalers and to consider particle parameters that influence adhesion between drug and carrier in dry powder inhalers. Different forms of mannitol, lactose and maltitol were mixed with either terbutaline sulphate or formoterol fumarate. The blends were submitted to different adhesion tests where drug detachment from the carrier was obtained either through mechanical vibration or by aspiration. Parameters like particle shape, roughness, amorphous content and cristalline form may affect interactions between drug and carrier. In our case, crystallized forms of the carrier offered lower adhesion but better release of the active ingredient than spray-dried forms. The crystallized mannitol produced maximal fine particle dose. The blends of the mannitols and the two active ingredients gave different results. The two techniques used to assess the adhesion of drugs to carrier particles provide complementary information about drug/carrier interactions and detachment. The mechanical sieving allows to assess blend stability and the air-jet sieving makes it possible to determine how easily the drug separates from carrier. For the drugs tested, the results of fine particle doses are in agreement with the Alpine air-jet sieve results. The tests used are helpful for the choice of a new carrier in the field of the development of new carriers for dry powder inhalers. PMID:17113733

  10. Features of charge carrier transport determined from carrier extraction current in .mu.c-Si:H

    Czech Academy of Sciences Publication Activity Database

    Juška, G.; Arlauskas, K.; Nekrašas, N.; Stuchlík, Jiří; Niquille, X.; Wyrsch, N.

    299-302, - (2002), s. 375-379. ISSN 0022-3093 Grant ostatní: VMSF(LT) 01SP-02 Institutional research plan: CEZ:AV0Z1010914 Keywords : mobility of majority carriers * photoconductivity transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2002

  11. 47 CFR 69.105 - Carrier common line for non-price cap local exchange carriers.

    Science.gov (United States)

    2010-10-01

    ... residential and single-line business lines multiplied by the difference between the residential and single-line business End User Common Line rate cap and the lesser of $6.50 or the non-price cap local exchange... 47 Telecommunication 3 2010-10-01 2010-10-01 false Carrier common line for non-price cap...

  12. Nasal carriers are more likely to acquire exogenous Staphylococcus aureus strains than non-carriers.

    Science.gov (United States)

    Ghasemzadeh-Moghaddam, H; Neela, V; van Wamel, W; Hamat, R A; Shamsudin, M Nor; Hussin, N Suhaila Che; Aziz, M N; Haspani, M S Mohammad; Johar, A; Thevarajah, S; Vos, M; van Belkum, A

    2015-11-01

    We performed a prospective observational study in a clinical setting to test the hypothesis that prior colonization by a Staphylococcus aureus strain would protect, by colonization interference or other processes, against de novo colonization and, hence, possible endo-infections by newly acquired S. aureus strains. Three hundred and six patients hospitalized for >7 days were enrolled. For every patient, four nasal swabs (days 1, 3, 5, and 7) were taken, and patients were identified as carriers when a positive nasal culture for S. aureus was obtained on day 1 of hospitalization. For all patients who acquired methicillin-resistant S. aureus (MRSA) or methicillin-susceptible S. aureus via colonization and/or infection during hospitalization, strains were collected. We note that our study may suffer from false-negative cultures, local problems with infection control and hospital hygiene, or staphylococcal carriage at alternative anatomical sites. Among all patients, 22% were prior carriers of S. aureus, including 1.9% whom carried MRSA upon admission. The overall nasal staphylococcal carriage rate among dermatology patients was significantly higher than that among neurosurgery patients (n = 25 (55.5%) vs. n = 42 (16.1%), p 0.005). This conclusion held when the carriage definition included individuals who were nasal culture positive on day 1 and day 3 of hospitalization (p 0.0001). All MRSA carriers were dermatology patients. There was significantly less S. aureus acquisition among non-carriers than among carriers during hospitalization (p 0.005). The mean number of days spent in the hospital before experiencing MRSA acquisition in nasal carriers was 5.1, which was significantly lower than the score among non-carriers (22 days, p 0.012). In conclusion, we found that nasal carriage of S. aureus predisposes to rather than protects against staphylococcal acquisition in the nose, thereby refuting our null hypothesis. PMID:26183299

  13. Future Road Density

    Data.gov (United States)

    U.S. Environmental Protection Agency — Road density is generally highly correlated with amount of developed land cover. High road densities usually indicate high levels of ecological disturbance. More...

  14. Use of alternative carrier materials in AOAC Official Method 2008.05, efficacy of liquid sporicides against spores of Bacillus subtilis on a hard, nonporous surface, quantitative three-step method.

    Science.gov (United States)

    Tomasino, Stephen F; Rastogi, Vipin K; Wallace, Lalena; Smith, Lisa S; Hamilton, Martin A; Pines, Rebecca M

    2010-01-01

    The quantitative Three-Step Method (TSM) for testing the efficacy of liquid sporicides against spores of Bacillus subtilis on a hard, nonporous surface (glass) was adopted as AOAC Official Method 2008.05 in May 2008. The TSM uses 5 x 5 x 1 mm coupons (carriers) upon which spores have been inoculated and which are introduced into liquid sporicidal agent contained in a microcentrifuge tube. Following exposure of inoculated carriers and neutralization, spores are removed from carriers in three fractions (gentle washing, fraction A; sonication, fraction B; and gentle agitation, fraction C). Liquid from each fraction is serially diluted and plated on a recovery medium for spore enumeration. The counts are summed over the three fractions to provide the density (viable spores per carrier), which is log10-transformed to arrive at the log density. The log reduction is calculated by subtracting the mean log density for treated carriers from the mean log density for control carriers. This paper presents a single-laboratory investigation conducted to evaluate the applicability of using two porous carrier materials (ceramic tile and untreated pine wood) and one alternative nonporous material (stainless steel). Glass carriers were included in the study as the reference material. Inoculated carriers were evaluated against three commercially available liquid sporicides (sodium hypochlorite, a combination of peracetic acid and hydrogen peroxide, and glutaraldehyde), each at two levels of presumed efficacy (medium and high) to provide data for assessing the responsiveness of the TSM. Three coupons of each material were evaluated across three replications at each level; three replications of a control were required. Even though all carriers were inoculated with approximately the same number of spores, the observed counts of recovered spores were consistently higher for the nonporous carriers. For control carriers, the mean log densities for the four materials ranged from 6.63 for

  15. Evaluating Density Forecasts

    OpenAIRE

    Francis X. Diebold; Todd A. Gunther; Anthony S. Tay

    1997-01-01

    The authors propose methods for evaluating and improving density forecasts. They focus primarily on methods that are applicable regardless of the particular user's loss function, though they take explicit account of the relationships between density forecasts, action choices, and the corresponding expected loss throughout. They illustrate the methods with a detailed series of examples, and they discuss extensions to improving and combining suboptimal density forecasts, multistep-ahead density...

  16. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    Science.gov (United States)

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  17. Analytical model of carrier mobility in a Polymer Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Milošević Milan M.

    2007-01-01

    Full Text Available In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphically. In comparison to accessible experimental results excellent correspondence was found. This model enables the calculation of simple POFET current-voltage I (V characteristics.

  18. Characteristic lengths for three-carrier transport with spin-flip and electron-hole recombination

    Science.gov (United States)

    Krcmar, Maja; Saslow, Wayne M.

    2016-05-01

    The exact solution of the linearized, steady-state transport equation for three-carrier systems, such as can occur for semiconductors and ionic conductors, is constructed starting from the near-equilibrium entropy-production requirements of irreversible thermodynamics. Three characteristic modes are found, one associated with electrostatic screening (which is often neglected), and two modes associated with diffusion and "reactions." For a spintronics model with up and down electrons and unpolarized holes, the "reactions" are spin-flip and electron-hole recombination. We discuss how the variations in carrier density, diffusivity, recombination rate, and spin relaxation time affect the characteristic lengths. We apply these modes to study spin-polarized surface photoabsorption.

  19. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-07-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid.

  20. DYNAMIC RESPONSE ANALYSIS OF CARRIER-BASED AIRCRAFT DURING LANDING

    Institute of Scientific and Technical Information of China (English)

    段萍萍; 聂宏; 魏小辉

    2013-01-01

    In view of the complexity of landing on the deck of aircraft carrier ,a systematic model ,composed of six-degree-of-freedom mathematic model of carrier-based aircraft ,four-degree-of-freedom model of landing gears and six-degree-of-freedom mathematic model of carrier , is established in the Matlab-Simulink environment , with damping function of landing gears and dynamic characteristics of tires being considered .The model ,where the car-rier movement is introduced ,is applicable for any abnormal landing condition .Moreover ,the equations of motion and relevant parameter are also derived .The dynamic response of aircraft is calculated via the variable step-size Runge-Kuta algorithm .The effect of attitude angles of aircraft and carrier movement during the process of landing is illustrated in details .The analytical results can provide some reference for carrier-based aircraft design and main-tenance .

  1. Difficulty of carrier generation in orthorhombic PbO

    Science.gov (United States)

    Liao, Min; Takemoto, Seiji; Xiao, Zewen; Toda, Yoshitake; Tada, Tomofumi; Ueda, Shigenori; Kamiya, Toshio; Hosono, Hideo

    2016-04-01

    Polycrystalline β-PbO films were grown by pulsed laser deposition in atmospheres ranging from oxygen-poor (the oxygen pressure of 0.01 Pa) to oxygen-rich (13 Pa) conditions, and the oxygen chemical potential was further enhanced by ozone annealing to examine hole doping. It was found that each of the as-grown β-PbO films showed poor electrical conductivity, σ attributed to the deep VBM of β-PbO. On the other hand, annealing β-PbO films in reactive oxygen-containing atmospheres (i.e., O3) led to a significantly enhanced electrical conductivity (i.e., σ > 7.1 × 102 S cm-1) but it is the result of the formation of an n-type PbO2 phase because oxygen chemical potential exceeded the phase boundary limit. The striking difference in carrier generation between PbO and SnO is discussed based on the electronic structures calculated by density functional theory.

  2. A Silicon Micromachined Gyroscope Driven by the Rotating Carrier Self

    Institute of Scientific and Technical Information of China (English)

    Fuxue Zhang; Xu Mao; Yu Liu; Nan Zhang; Wei Zhang

    2006-01-01

    This paper reported a silicon micromachined gyroscope which is driven by the rotating carrier's angular velocity, the silicon was manufactured by anisotropy etching. The design, fabrication and packing of the sensing element were introduced in the paper. The imitation experimentation and performance test have certificated that the principle of the gyroscope is correct and the gyroscope can be used to sense yawing or pitching angular velocity of the rotating carrier, and the angular velocity of the rotating carrier itself.

  3. Yeast mitochondrial ADP/ATP carriers are monomeric in detergents

    OpenAIRE

    Bamber, Lisa; Harding, Marilyn; Butler, P. Jonathan G.; Kunji, Edmund R.S.

    2006-01-01

    Mitochondrial carriers are believed widely to be homodimers both in the inner membrane of the organelle and in detergents. The dimensions and molecular masses of the detergent and protein–detergent micelles were measured for yeast ADP/ATP carriers in a range of different detergents. The radius of the carrier at the midpoint of the membrane, its average radius, its Stokes' radius, its molecular mass, and its excluded volume were determined. These parameters are consistent with the known struct...

  4. Improvement of Thermoelectric Properties of a-InGaZnO Thin Film by Optimizing Carrier Concentration

    Science.gov (United States)

    Fujimoto, Yuta; Uenuma, Mutsunori; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2016-03-01

    We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO) thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios [O2/(Ar + O2)] using radiofrequency magnetron sputtering. The Seebeck coefficient and electrical conductivity were measured from 100 K to 400 K. The measured Seebeck coefficient and electrical conductivity show a trade-off relation. The carrier concentration in the a-IGZO films increased with decreasing oxygen flow ratio. This result can be adequately explained by the increment of oxygen vacancies. We found that the power factor (PF) at 300 K had a maximum value of 82 × 10-6 W/m-K2, where the carrier density was 7.7 × 1019 cm-3. These results indicate that a-IGZO shows maximal PF in the transition region from nondegenerate to degenerate state.

  5. Enhanced Carrier Generation in Nb-Doped SnO2 Thin Films Grown on Strain-Inducing Substrates

    Science.gov (United States)

    Nakao, Shoichiro; Yamada, Naoomi; Hirose, Yasushi; Hasegawa, Tetsuya

    2012-06-01

    We report the effect of lattice strain from the substrate on carrier generation in Nb-doped SnO2 (NTO) transparent conductive oxide (TCO) thin films. The carrier activation efficiency of Nb was strongly affected by in-plane tensile strain, and the NTO films grown on c-Al2O3 and anatase TiO2 seed layers had carrier density (ne) as high as 3×1020 cm-3. In contrast, strain-free NTO films grown on glass exhibited much smaller ne due to the formation of deep impurity levels. These results imply that NTO has potential as a practical TCO in the presence of substrate-film epitaxial interaction.

  6. Blind Estimation of Multiple Carrier Frequency Offsets

    CERN Document Server

    Yu, Yuanning; Poor, H Vincent; Koivunen, Visa

    2007-01-01

    Multiple carrier-frequency offsets (CFO) arise in a distributed antenna system, where data are transmitted simultaneously from multiple antennas. In such systems the received signal contains multiple CFOs due to mismatch between the local oscillators of transmitters and receiver. This results in a time-varying rotation of the data constellation, which needs to be compensated for at the receiver before symbol recovery. This paper proposes a new approach for blind CFO estimation and symbol recovery. The received base-band signal is over-sampled, and its polyphase components are used to formulate a virtual Multiple-Input Multiple-Output (MIMO) problem. By applying blind MIMO system estimation techniques, the system response is estimated and used to subsequently transform the multiple CFOs estimation problem into many independent single CFO estimation problems. Furthermore, an initial estimate of the CFO is obtained from the phase of the MIMO system response. The Cramer-Rao Lower bound is also derived, and the la...

  7. Hot carrier injection degradation under dynamic stress

    Institute of Scientific and Technical Information of China (English)

    Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

    2011-01-01

    In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0V and Vd = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

  8. Microemulsions as carriers for therapeutic molecules.

    Science.gov (United States)

    Mehta, Surinder K; Kaur, Gurpreet

    2010-01-01

    The thrust for finding newer drug delivery systems for exiting therapeutic molecules has opened a wide window for colloidal systems. Due to the presence of different domains of variable polarity in the microemulsion systems, they show a huge potential to be used as drug delivery vehicles for a variety of drugs. The use of microemulsion as drug delivery vehicles through a number of routes has engaged a large number of research groups in this area. Microemulsion media finds several applications ranging from drug delivery to drug nanoparticle templating due to its ability to enhance solubility, stability and bioavailability. This review on patent articles recounts the patent literature dealing with different kind of microemulsion carriers used via different routes, solubility and permeability enhancement and its use as a template for nanoparticle synthesis. PMID:19807681

  9. Carrier Aggregation for LTE-Advanced

    DEFF Research Database (Denmark)

    Pedersen, Klaus Ingemann; Frederiksen, Frank; Rosa, Claudio;

    2011-01-01

    aggregated. This paper presents a summary of the supported CA scenarios as well as an overview of the CA functionality for LTE-Advanced with special emphasis on the basic concept, control mechanisms, and performance aspects. The discussion includes definitions of the new terms primary cell (PCell) and......Carrier aggregation (CA) is one of the key features for LTE-Advanced. By means of CA, users gain access to a total bandwidth of up to 100 MHz in order to meet the IMT-Advanced requirements. The system bandwidth may be contiguous, or composed of several non-contiguous bandwidth chunks, which are...... secondary cell (SCell), mechanisms for activation and deactivation of CCs, and the new cross-CC scheduling functionality for improved control channel optimizations. We also demonstrate how CA can be used as an enabler for simple yet effective frequency domain interference management schemes. In particular...

  10. A Systems View of the Differences between APOE ε4 Carriers and Non-carriers in Alzheimer's Disease.

    Science.gov (United States)

    Jiang, Shan; Tang, Ling; Zhao, Na; Yang, Wanling; Qiu, Yu; Chen, Hong-Zhuan

    2016-01-01

    APOE ε4 is the strongest genetic risk factor for late-onset Alzheimer's disease (AD) and accounts for 50-65% of late-onset AD. Late-onset AD patients carrying or not carrying APOE ε4 manifest many clinico-pathological distinctions. Thus, we applied a weighted gene co-expression network analysis to identify specific co-expression modules in AD based on APOE ε4 stratification. Two specific modules were identified in AD APOE ε4 carriers and one module was identified in non-carriers. The hub genes of one module of AD APOE ε4 carriers were ISOC1, ENO3, GDF10, GNB3, XPO4, ACLY and MATN2. The other module of AD APOE ε4 carriers consisted of 10 hub genes including ANO3, ARPP21, HPCA, RASD2, PCP4 and ADORA2A. The module of AD APOE ε4 non-carriers consisted of 16 hub genes including DUSP5, TNFRSF18, ZNF331, DNAJB5 and RIN1. The module of AD APOE ε4 carriers including ISOC1 and ENO3 and the module of non-carriers contained the most highly connected hub gene clusters. mRNA expression of the genes in the cluster of the ISOC1 and ENO3 module of carriers was shown to be correlated in a time-dependent manner under APOE ε4 treatment but not under APOE ε3 treatment. In contrast, mRNA expression of the genes in the cluster of non-carriers' module was correlated under APOE ε3 treatment but not under APOE ε4 treatment. The modules of carriers demonstrated genetic bases and were mainly enriched in hereditary disorders and neurological diseases, energy metabolism-associated signaling and G protein-coupled receptor-associated pathways. The module including ISOC1 and ENO3 harbored two conserved promoter motifs in its hub gene cluster that could be regulated by common transcription factors and miRNAs. The module of non-carriers was mainly enriched in neurological, immunological and cardiovascular diseases and was correlated with Parkinson's disease. These data demonstrate that AD in APOE ε4 carriers involves more genetic factors and particular biological processes, whereas AD

  11. Light emission from hot carriers in polar semiconductor devices

    Science.gov (United States)

    Lugli, Paolo; Di Carlo, Aldo; Vogl, Peter; Zandler, G.

    1993-11-01

    We present a theoretical study of hot-carrier induced light emission in III-V semiconductor devices. Carrier heating under the intense electric fields present under high bias conditions are studied via a selfconsistent Monte Carlo simulation. The carrier distribution functions obtained from the simulation are then incorporated into a pseudo-potential algorithm that describes the direct optical transitions and calculates the corresponding spectra. We show that the light emission due to hot carriers is dominated by direct radiative interband transitions within the conduction and valence bands. Good agreement between theory and experiment is obtained for GaAs MESFET and GaAs/AlGaAs HBTs.

  12. Preparation of microorganism free carrier for biofertilizer product

    International Nuclear Information System (INIS)

    Biofertilizer has been identified as an alternative or complementary to chemical fertilizer to increase soil fertility and crop production in sustainable farming. Biofertilizers are products containing living cells of different types of known microorganisms that may increase crop productivity through N2 fixation, phosphate solubilization or stimulation of plant growth by synthesising phytohormones. A good biofertilizer product needs a good carrier or substrate. A good carrier is free from microbial contamination and can optimise the growth of the biofertilizer microorganisms. Compost is commonly used as carrier or substrate for biofertilizer microorganisms. In the present study, compost produced by Nuclear Malaysia using the Natural Farming was used as a carrier for the biofertilizer products. Gamma irradiation has been used to produce a ?clean? or sterile carrier. The sterilization effect of the carrier was checked by using serial dilution technique. Carriers that were irradiated at 50 kGy of gamma irradiation were found to be sterile. The shelf life of the sterile carriers was also determined. After six months the compost carriers were still free from microbial contamination. (Author)

  13. Obstacle avoidance and path planning for carrier aircraft launching

    Directory of Open Access Journals (Sweden)

    Wu Yu

    2015-06-01

    Full Text Available Launching safety and efficiency are important indexes to measure the fighting capacity of carrier. The study on path planning for taxi of carrier aircraft launching under actual deck environment is of great significance. In actual deck scheduling, manual command is applied to taxi of carrier aircraft, which has negative effects on the safety of staff and carrier aircraft launching. In consideration of both the safety and efficiency of carrier aircraft launching, the key elements of the problem are abstracted based on the analysis of deck environment, carrier aircraft maneuver performance and task requirements. According to the problem description, the mathematical model is established including various constraints. The carrier aircraft and the obstacles are reasonably simplified as circle and polygons respectively. What’s more, the proposed collision detection model reduces the calculations. Aimed at the features of model, the theory of model predictive control (MPC is applied to the path search. Then a dynamic weight heuristic function is designed and a dynamic multistep optimization algorithm is proposed. Taking the Nimitz-class aircraft carrier as an example, the paths from parking place to catapult are planned, which indicate the rationality of the model and the effectiveness of the algorithm by comparing the planning results under different simulation environments. The main contribution of research is the establishment of obstacle avoidance and path planning model. In addition, it provides the solution of model and technological foundations for comprehensive command and real-time decision-making of the carrier aircraft.

  14. Fertility preservation in BRCA mutation carriers.

    Science.gov (United States)

    Revelli, Alberto; Salvagno, Francesca; Delle Piane, Luisa; Casano, Simona; Evangelista, Francesca; Pittatore, Giulia; Razzano, Alessandra; Marchino, Gian L; Gennarelli, Gianluca; Benedetto, Chiara

    2016-10-01

    According to enhanced long-term survival rates of these patients, interest in fertility preservation for young women facing gonadotoxic therapies is increasing. Women who carry a mutation in the BRCA1 or BRCA2 gene have a specifically increased lifetime risk of developing breast and tubo-ovarian cancer. Moreover, they are at high risk of undergoing premature infertility due to the medical interventions that are often performed in order to reduce cancer risk or treat an already existing malignancy. Fertility issues are relevant for healthy BRCA mutation carriers, whose family-planning decisions are often influenced by the need of prophylactic bilateral salpingo-oophorectomy at young age. In BRCA mutation carriers who have a breast cancer at young age, the oncostatic treatment is associated with a significant ovarian toxicity linked to chemotherapy as well as to the long lasting hormonotherapy and to the need of delaying pregnancy for several years. Prompt counselling about different fertility preservation options should be offered to all young girls and women at high risk of ovarian insufficiency and infertility. Validated techniques to preserve fertility include oocyte and embryo cryopreservation, while experimental techniques include ovarian suppression with GnRH-analogs during chemotherapy and ovarian tissue cryopreservation. The choice of the best strategy depends on age, type of chemotherapy, partner status, cancer type, time available for fertility preservation intervention and the risk of ovarian metastasis. All available options should be offered and can be performed alone or in combination. A crucial point is to avoid a significant delay to cancer treatment. PMID:26997146

  15. Probability densities and Lévy densities

    DEFF Research Database (Denmark)

    Barndorff-Nielsen, Ole Eiler

    For positive Lévy processes (i.e. subordinators) formulae are derived that express the probability density or the distribution function in terms of power series in time t. The applicability of the results to finance and to turbulence is briefly indicated.......For positive Lévy processes (i.e. subordinators) formulae are derived that express the probability density or the distribution function in terms of power series in time t. The applicability of the results to finance and to turbulence is briefly indicated....

  16. Carrier-added and no-carrier-added syntheses of [18F]spiroperidol and [18F]haloperidol

    International Nuclear Information System (INIS)

    Syntheses of [18F]haloperidol and [18F]spiroperidol in both no-carrier-added and carrier-added forms have been accomplished. The no-carrier-added [18F]butyrophenone neuroleptics were prepared in low (18F-neuroleptics were prepared in better (5-17%) yields by 18F-for-19F nucleophilic aromatic substitution. The preparation of all synthetic precursors, and procedures for radiolabeling are fully described. (author)

  17. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers

    Science.gov (United States)

    Elhami Khorasani, Arash

    Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10 -9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τ r measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τgeff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity

  18. Trapping of the Enoyl-Acyl Carrier Protein Reductase-Acyl Carrier Protein Interaction.

    Science.gov (United States)

    Tallorin, Lorillee; Finzel, Kara; Nguyen, Quynh G; Beld, Joris; La Clair, James J; Burkart, Michael D

    2016-03-30

    An ideal target for metabolic engineering, fatty acid biosynthesis remains poorly understood on a molecular level. These carrier protein-dependent pathways require fundamental protein-protein interactions to guide reactivity and processivity, and their control has become one of the major hurdles in successfully adapting these biological machines. Our laboratory has developed methods to prepare acyl carrier proteins (ACPs) loaded with substrate mimetics and cross-linkers to visualize and trap interactions with partner enzymes, and we continue to expand the tools for studying these pathways. We now describe application of the slow-onset, tight-binding inhibitor triclosan to explore the interactions between the type II fatty acid ACP from Escherichia coli, AcpP, and its corresponding enoyl-ACP reductase, FabI. We show that the AcpP-triclosan complex demonstrates nM binding, inhibits in vitro activity, and can be used to isolate FabI in complex proteomes. PMID:26938266

  19. A Systems View of the Differences between APOE ε4 Carriers and Non-carriers in Alzheimer’s Disease

    Science.gov (United States)

    Jiang, Shan; Tang, Ling; Zhao, Na; Yang, Wanling; Qiu, Yu; Chen, Hong-Zhuan

    2016-01-01

    APOE ε4 is the strongest genetic risk factor for late-onset Alzheimer’s disease (AD) and accounts for 50–65% of late-onset AD. Late-onset AD patients carrying or not carrying APOE ε4 manifest many clinico-pathological distinctions. Thus, we applied a weighted gene co-expression network analysis to identify specific co-expression modules in AD based on APOE ε4 stratification. Two specific modules were identified in AD APOE ε4 carriers and one module was identified in non-carriers. The hub genes of one module of AD APOE ε4 carriers were ISOC1, ENO3, GDF10, GNB3, XPO4, ACLY and MATN2. The other module of AD APOE ε4 carriers consisted of 10 hub genes including ANO3, ARPP21, HPCA, RASD2, PCP4 and ADORA2A. The module of AD APOE ε4 non-carriers consisted of 16 hub genes including DUSP5, TNFRSF18, ZNF331, DNAJB5 and RIN1. The module of AD APOE ε4 carriers including ISOC1 and ENO3 and the module of non-carriers contained the most highly connected hub gene clusters. mRNA expression of the genes in the cluster of the ISOC1 and ENO3 module of carriers was shown to be correlated in a time-dependent manner under APOE ε4 treatment but not under APOE ε3 treatment. In contrast, mRNA expression of the genes in the cluster of non-carriers’ module was correlated under APOE ε3 treatment but not under APOE ε4 treatment. The modules of carriers demonstrated genetic bases and were mainly enriched in hereditary disorders and neurological diseases, energy metabolism-associated signaling and G protein-coupled receptor-associated pathways. The module including ISOC1 and ENO3 harbored two conserved promoter motifs in its hub gene cluster that could be regulated by common transcription factors and miRNAs. The module of non-carriers was mainly enriched in neurological, immunological and cardiovascular diseases and was correlated with Parkinson’s disease. These data demonstrate that AD in APOE ε4 carriers involves more genetic factors and particular biological processes

  20. Fractures as Carriers for Colloid and Nano-Particles

    Science.gov (United States)

    Weisbrod, N.; Cohen, M.; Tang, X.; Zvikelsky, O.; Meron, H.

    2013-12-01

    One of the major questions in studies in which transport of colloids and nano particles (NPs) is being explored is whether or not they will be mobile on large scales and in large conduits such as fractures and cracks. While many studies explore the migration on a small scale and mostly in ideal porous media, less is known about this topic on larger scales and in fractured rocks or cracked soils. Fractures are likely to be favorable carriers for colloids and NPs due to their large aperture, enabling relatively high flow velocity and smaller tortuosity of the flow path. Transport of various colloids including microspheres, clay particles and viruses, as well as colloid-facilitated transport of lead and cesium was explored in a naturally discrete fractured chalk cores. Preliminary work exploring the transport of NZVIs and TiO2 NPs is being carried out through these cores as well. Our results indicate very high recovery of large microspheres (0.2 and 1 micron) and lower recovery of the small spheres (0.02 micron). It was observed that clay particles, with similar surface properties and sizes to that of the microspheres, show significantly lower recoveries (50 vs over 90%), probably due to the high density of clay particles in respect to the microspheres (2.65 vs. 1.05 g/cm3). High recovery of bacteriophages was also observed, but they exhibit some differences in respect to microspheres with similar properties. In all cases, including the 0.02 micron colloids exhibiting lower recovery rates, arrival times were earlier than that of the bromide that was used as a reference. It was found that colloid-facilitated transport played a major role in the migration of lead and cesium through the fracture. In practice, lead was found to be mobile only in a colloidal form. The on-going work on NP transport through fractures is still in a preliminary phase. Nevertheless, TiO2 recovery was found to be very low. In conclusion, it was observed that in many cases fractures are favorable

  1. Enhancing light absorption within the carrier transport length in quantum junction solar cells.

    Science.gov (United States)

    Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

    2015-09-10

    Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells. PMID:26368966

  2. Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

    Directory of Open Access Journals (Sweden)

    Petrović Jovana P.

    2009-01-01

    Full Text Available In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular and square (bimolecular is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V.

  3. The construction of an in vitro three-dimensional hematopoietic microenvironment for mouse bone marrow cells employing porous carriers.

    Science.gov (United States)

    Tomimori, Y; Takagi, M; Yoshida, T

    2000-10-01

    Spatial development of mouse bone marrow cellsemploying porous carriers was investigated in order todesign a bioreactor with a three-dimensionalhematopoietic microenvironment. Three types of porouscarriers were used for examining the spatialdevelopment of anchorage-dependent primary stromalcells as feeder cells. Stromal cells were found tospread well at a high density on a polyester nonwovendisc carrier (Fibra cel (FC)) under a scanningelectron microscope, while cells on porous cellulosebeads (Microcube (MC), 500 mum pore diameter)spread at a low density; cells on another type ofcellulose porous beads (CPB, 100 mum pore diameter)were globular. Mouse bone marrow cells wereinoculated to dishes containing three types of porouscarriers which shared more than 30% of the bottomsurface in a dish. The concentration of stromal cellsin the well containing FC was lower than that on theother two carriers. However, the weekly output oftotal hematopoietic cell (suspension cells) increasedbetween day 21 and 28 in the culture using FC while itdecreased monotonously in the cultures by use of theother two carriers. The proportion of progenitorcells (BFU-E, CFU-GM) in the total hematopoietic cellpopulation, after showing an initial decrease,increased after 1 week in the culture using FC whilethe proportion decreased monotonously to zero in thecultures using MC and CPB. PMID:19003386

  4. Inhomogeneous multi carrier superconductivity at LaXO3/SrTiO3 (X = Al or Ti) oxide interfaces

    International Nuclear Information System (INIS)

    Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X = Al or Ti) interface is tuned above a threshold value by means of gating. By reanalyzing previous measurements that highlight the presence of two kinds of carriers (low- and high-mobility), we shall provide a description of multi carrier magneto transport in an inhomogeneous two-dimensional electron gas, gaining insight into the properties of the physics of the systems under investigation. We shall then show that the measured resistance, superfluid density, and tunneling spectra result from the percolative connection of superconducting ‘puddles’ with randomly distributed critical temperatures embedded in a weakly localizing metallic matrix. We shall also show that this scenario is consistent with the characteristics of the superconductor-to-metal transition driven by a magnetic field. A multi carrier description of the superconducting state within a weak-coupling, BCS-like model will be also discussed. (paper)

  5. Quasiperiodic packing densities

    International Nuclear Information System (INIS)

    The problem of the packing density on quasiperiodic lattices is discussed in a systematic way using projection techniques. For compact domains a direct construction is presented using a Voronoi construction on a quasilattice in perpendicular space defined by the forbidden volume of the packed objects. A generalized inflation law, valid for arbitrary shapes of the acceptance domain using the properties of linear mappings of the hyperlattice on itself which commute with the symmetry group, is used to show that the packing densities and the whole structure of the projected quasilattice are periodic under scale transformations. We find the optimal compact acceptance domains and packing densities for several icosahedral problems. For the packing of spheres on the primitive lattice, an icosahedron and the truncated triacontahedron give equal densities but different quasilattices. For the packing of icosahedra one finds only the second lattice and a very high density. For the fcc and bcc lattices the maximum density acceptance domain is a triacontahedron and the densities are considerably lower. The results of Henley for including correlations to increase the density are reformulated in terms of a graph problem in perpendicular space. Including only the graphs equivalent to his, we find the same packing density for the two primitive and for the fcc lattice. It is shown that a generalization leads to an interesting and very complex problem in graph theory which we are unable to solve

  6. A Lanchester model of submarine attack on a carrier battlegroup

    OpenAIRE

    Eagle, James N.

    1987-01-01

    A Lanchester model is developed for a battlegroup ASW engagement. Two variations are included. In the first, long-range missile firing submarines, short-range missile or torpedo firing submarines, and submarines firing only torpedoes distribute their attack uniformly over battlegroup escort ships and carriers. In the second variation, the attack is concentrated on the carriers.

  7. Carriers of foot-and-mouth disease virus: a review

    NARCIS (Netherlands)

    Moonen, P.; Schrijver, R.

    2000-01-01

    This review describes current knowledge about persistent foot-and-mouth disease virus (FMDV) infections, the available methods to detect carrier animals, the properties of persisting virus, the immunological mechanisms, and the risk of transmission. In particular, knowledge about the carrier state,

  8. Modeling of carrier dynamics in quantum-well electroabsorption modulators

    DEFF Research Database (Denmark)

    Højfeldt, Sune; Mørk, Jesper

    2002-01-01

    various design parameters have on the device properties, in particular how they affect the carrier dynamics and the corresponding field dynamics. A number of different types of results are presented. We calculate absorption spectra and steady-state field screening due to carrier pile-up at the separate...

  9. 14 CFR 252.5 - Smoking ban: foreign air carriers.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Smoking ban: foreign air carriers. 252.5 Section 252.5 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS SMOKING ABOARD AIRCRAFT § 252.5 Smoking ban: foreign air carriers....

  10. 14 CFR 252.3 - Smoking ban: air carriers.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Smoking ban: air carriers. 252.3 Section 252.3 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS SMOKING ABOARD AIRCRAFT § 252.3 Smoking ban: air carriers. Air...

  11. 27 CFR 26.117 - Action by carrier.

    Science.gov (United States)

    2010-04-01

    ... OF THE TREASURY LIQUORS LIQUORS AND ARTICLES FROM PUERTO RICO AND THE VIRGIN ISLANDS Taxpayment of Liquors and Articles in Puerto Rico Procedure at Port of Arrival § 26.117 Action by carrier. The carrier of the merchandise specified on the Form 487B shall, at the time of unlading at the port of...

  12. Proposal for tutorial: Resilience in carrier Ethernet transport

    DEFF Research Database (Denmark)

    Berger, Michael Stübert; Wessing, Henrik; Ruepp, Sarah Renée

    2009-01-01

    This tutorial addresses how Carrier Ethernet technologies can be used in the transport network to provide resilience to the packet layer. Carrier Ethernet networks based on PBB-TE and T-MPLS/MPLS-TP are strong candidates for reliable transport of triple-play services. These technologies offer...

  13. Spread Spectrum Modulation by Using Asymmetric-Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Sera, Dezso; Rasmussen, Peter Omand; Pedersen, John Kim

    2012-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on simulations and experimental measurements, it is shown that the spread effect of the discrete components from the motor current spectra and acoustic spectra is...

  14. 50 CFR 14.105 - Consignment to carrier.

    Science.gov (United States)

    2010-10-01

    ... Wild Mammals and Birds to the United States § 14.105 Consignment to carrier. (a) No carrier shall accept any live wild mammal or bird for transport to the United States that has not been examined within... attendant. (c) A sick or injured wild mammal or bird shall be permitted transport to the United States...

  15. Current Consumption Measurements with a Carrier Aggregation Smartphone

    DEFF Research Database (Denmark)

    Sanchez-Mejias, Rafael; Guo, Yu; Lauridsen, Mads; Mogensen, Preben; Ángel Maestro Ruiz de Temiño, Luis

    Carrier Aggregation (CA) is introduced in LTE release 10 to improve data rates by allowing the User Equipment (UE) to receive data on more than one LTE carrier. The related increased complexity is expected to affect the UE current consumption, but yet no empirical evaluation has been published on...

  16. Quality of service modeling and analysis for carrier ethernet

    NARCIS (Netherlands)

    Malhotra, R.

    2008-01-01

    Today, Ethernet is moving into the mainstream evolving into a carrier grade technology. Termed as Carrier Ethernet it is expected to overcome most of the shortcomings of native Ethernet. It is envisioned to carry services end-to-end serving corporate data networking and broadband access demands as w

  17. Quasi phase matching for high order harmonic generation induced by the carrier-envelope phase

    OpenAIRE

    Faccio, Daniele; Serrat, Carles; Cela, Jose M.; Di Trapani, Albert Farres Paolo; Biegert, Jens

    2009-01-01

    We report a novel quasi-phase matching technique for high-order harmonic generation in low-density gases. Numerical simulations show that in few-optical cycle pulsed Bessel beams it is possible to control the pulse envelope and phase velocities which in turn allows to control the carrier-envelope phase during propagation. The resulting oscillations in the peak intensity allow to phase-match the high-order harmonic generation process with a nearly two decade enhancement in the XUV power spectrum.

  18. Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

    DEFF Research Database (Denmark)

    Buus, Jens; Danielsen, Magnus

    1977-01-01

    The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density...... through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal...

  19. AQUASOMES: A NOVEL CARRIER FOR DRUG DELIVERY

    Directory of Open Access Journals (Sweden)

    Vishal Sutariya

    2012-03-01

    Full Text Available Nanobiopharmaceutics involves delivery of biopharmaceutical product through different biomaterials like multifunctional nanoparticles, quantum dots, aquasomes, superparamagnetic iron oxide crystals, and liposomes dendrimers. Nanotechnology has emerged fields of biomedical research in the last few decades the presents context is an attempt to present the brief information about nanobiotechnological applications. Aquasomes are nanoparticulate carrier system but instead of being simple nanoparticles these arse three layered self assembled structures, comprised of a solid phase nanocrystalline core coated with oligomeric film to which biochemically active molecules are adsorbed with or without modification. Aquasomes are spherical 60–300 nm particles used for drug and antigen delivery. Aquasomes discovery comprises a principle from microbiology, food chemistry, biophysics and many discoveries including solid phase synthesis, supramolecular chemistry, molecular shape change and self assembly. Three types of core materials are mainly used for producing aquasomes: tin oxide, nanocrystalline carbon ceramics (diamonds and brushite (calcium phosphate dihydrate. Calcium phosphate is the core of interest, owing to its natural presence in the body. The brushite is unstable and converts to hydroxyapatite upon prolong storage. Hydroxyapatite seems, therefore, a better core for the preparation of aquasomes. It is widely used for the preparation of implants for drug delivery. The solid core provides the structural stability, while the carbohydrate coating protects against dehydration and stabilizes the biochemically active molecules. This property of maintaining the conformational integrity of bioactive molecules has led to the proposal that aquasomes have potential as a carrier system for delivery of peptide, protein, hormones, antigens and genes to specific sites. Aquasome deliver their content through specific targeting, molecular sheiling and slow

  20. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.

    2014-09-15

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  1. Suspended biofilm carrier and activated sludge removal of acidic pharmaceuticals

    DEFF Research Database (Denmark)

    Falås, Per; Baillon-Dhumez, Aude; Andersen, Henrik Rasmus;

    2012-01-01

    Removal of seven active pharmaceutical substances (ibuprofen, ketoprofen, naproxen, diclofenac, clofibric acid, mefenamic acid, and gemfibrozil) was assessed by batch experiments, with suspended biofilm carriers and activated sludge from several full-scale wastewater treatment plants. A distinct...... difference between nitrifying activated sludge and suspended biofilm carrier removal of several pharmaceuticals was demonstrated. Biofilm carriers from full-scale nitrifying wastewater treatment plants, demonstrated considerably higher removal rates per unit biomass (i.e. suspended solids for the sludges and...... attached solids for the carriers) of diclofenac, ketoprofen, gemfibrozil, clofibric acid and mefenamic acid compared to the sludges. Among the target pharmaceuticals, only ibuprofen and naproxen showed similar removal rates per unit biomass for the sludges and biofilm carriers. In contrast to...

  2. Joint Iterative Carrier Synchronization and Signal Detection Employing Expectation Maximization

    DEFF Research Database (Denmark)

    Zibar, Darko; de Carvalho, Luis Henrique Hecker; Estaran Tolosa, Jose Manuel;

    2014-01-01

    . The algorithm is tested in a mixed line rate optical transmission scenario employing dual polarization 448 Gb/s 16-QAM signal surrounded by eight on-off keying channels in a 50 GHz grid. It is shown that joint carrier synchronization and data detection are more robust towards optical transmitter......In this paper, joint estimation of carrier frequency, phase, signal means and noise variance, in a maximum likelihood sense, is performed iteratively by employing expectation maximization. The parameter estimation is soft decision driven and allows joint carrier synchronization and data detection...... impairments and nonlinear phase noise, compared to digital phase-locked loop (PLL) followed by hard decisions. Additionally, soft decision driven joint carrier synchronization and detection offers an improvement of 0.5 dB in terms of input power compared to hard decision digital PLL based carrier...

  3. [Attachment theory and baby slings/carriers: technological network formation].

    Science.gov (United States)

    Lu, Zxy-Yann Jane; Lin, Wan-Shiuan

    2011-12-01

    Healthcare providers recognize the important role played by attachment theory in explaining the close relationship between mental health and social behavior in mothers and their children. This paper uses attachment theory in a socio-cultural context to ascertain the mechanism by which baby slings/carriers, a new technology, produced and reproduced the scientific motherhood. It further applies a social history of technology perspective to understand how baby carriers and attachment theory are socially constructed and historically contingent on three major transformations. These transformations include the use of attachment theory-based baby carriers to further scientific motherhood; the use of baby slings/carriers to further the medicalization of breastfeeding and enhance mother-infant attachment; and the use of baby slings/carriers to transform woman's identities by integrating scientific motherhood, independence and fashion. Implications for nursing clinical policy are suggested. PMID:22113629

  4. Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morikawa, Sei; Masubuchi, Satoru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Dou, Ziwei; Wang, Shu-Wei; Smith, Charles G.; Connolly, Malcolm R., E-mail: mrc61@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

    2015-12-14

    We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.

  5. Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhong-Tang; XING Zhi-Gang; GUO Li-Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    Semi-insulating (SI) GaN is grown using N2 as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using H2 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 104Ω/sq to 10Ω Q/sq by changing the NL carrier gas from H2 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the film are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using H2 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the film roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN significantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.

  6. Long-Lived Hot Carriers in III-V Nanowires.

    Science.gov (United States)

    Tedeschi, D; De Luca, M; Fonseka, H A; Gao, Q; Mura, F; Tan, H H; Rubini, S; Martelli, F; Jagadish, C; Capizzi, M; Polimeni, A

    2016-05-11

    Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs. PMID:27104870

  7. Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

    International Nuclear Information System (INIS)

    We elucidate a strong room temperature stimulated emission (SE) of In0.17Ga0.83N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm2. Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission

  8. O2 sensing dynamics of BiFeO3 nanofibers: effect of minor carrier compensation.

    Science.gov (United States)

    Sobhan, Mushtaq; Xu, Qiang; Katoch, Akash; Anariba, Franklin; Kim, Sang Sub; Wu, Ping

    2015-05-01

    In this paper we investigate O(2) sensing dynamics in BiFeO(3) (BFO) nanofibers at various concentrations and temperatures, by using a combined experiment and computer simulation approach. Samples of pristine BFO, Ni-doped BFO, and Pb-doped BFO nanofibers were prepared. By incorporating Ni and Pb, additional acceptor states are introduced in BFO. Density functional theory calculations show that Ni prefers to substitute Fe site while Pb substitutes Bi site, resulting in a new deep donor originating from Ni interstitial defects, along with oxygen vacancies (V(o)). We find that both the sensing response and recovery time are shorter in samples made of pristine BFO nanofibers than in Ni- and Pb-doped nanofiber samples. We interpret the observed sensing dynamics through charge transport theory of the major (acceptors) and minor (donors) carriers, and found that the minor carrier compensation plays a significant role in determining the response and recovery time of the sensor device. This minor carrier compensation charge transport mechanism will provide new insights into more robust sensor development strategies, and into the research of ion-electron coupling in chemical dynamics of semiconductors. PMID:25850830

  9. Ab initio charge-carrier mobility model for amorphous molecular semiconductors

    Science.gov (United States)

    Massé, Andrea; Friederich, Pascal; Symalla, Franz; Liu, Feilong; Nitsche, Robert; Coehoorn, Reinder; Wenzel, Wolfgang; Bobbert, Peter A.

    2016-05-01

    Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential to describe the electrical properties of devices based on these materials. The disordered nature of these semiconductors leads to percolative charge transport with a large characteristic length scale, posing a challenge to the development of such models from ab initio simulations. Here, we develop an ab initio mobility model using a four-step procedure. First, the amorphous morphology together with its energy disorder and intermolecular charge-transfer integrals are obtained from ab initio simulations in a small box. Next, the ab initio information is used to set up a stochastic model for the morphology and transfer integrals. This stochastic model is then employed to generate a large simulation box with modeled morphology and transfer integrals, which can fully capture the percolative charge transport. Finally, the charge-carrier mobility in this simulation box is calculated by solving a master equation, yielding a mobility function depending on temperature, carrier concentration, and electric field. We demonstrate the procedure for hole transport in two important molecular semiconductors, α -NPD and TCTA. In contrast to a previous study, we conclude that spatial correlations in the energy disorder are unimportant for α -NPD. We apply our mobility model to two types of hole-only α -NPD devices and find that the experimental temperature-dependent current density-voltage characteristics of all devices can be well described by only slightly decreasing the simulated energy disorder strength.

  10. Carrier localization effect in polarized InGaN multiple quantum wells

    International Nuclear Information System (INIS)

    Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d, and In content, x. Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time-resolved PL spectroscopy, the dominance of the localization effect against the built-in field effect on carrier recombination dynamics in InxGa1-xN MQWs of different well width (d = 2.0-4.0 nm, x ∼ 0.15) and In content (x ∼ 0.22-0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content and well width were found to increase the band potential fluctuations and carrier localization depth. The density of localized states deduced from the simulation was found to be in a fair agreement with the PLE data. The built-in field strength in InGaN QWs containing 15% of In was estimated to be of 0.5 MV/cm. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Production of Solid sustainable Energy Carriers from biomass by means of TORrefaction (SECTOR)

    Energy Technology Data Exchange (ETDEWEB)

    Witt, Janet; Bienert, Kathrin [DBFZ Deutsches Biomasseforschungszentrum gemeinnuetzige GmbH, Leipzig (Germany). Bereich Bioenergiesysteme; Zwart, Robin; Kiel, Jaap; Englisch, Martin; Wojcik, Magdalena

    2012-07-01

    SECTOR is a large-scale European project with a strong consortium of over 20 partners from industry and science. The project is focussed on the further development of torrefaction-based technologies for the production of solid bioenergy carriers up to pilot-plant scale and beyond, and on supporting the market introduction of torrefaction-based bioenergy carriers as a commodity renewable solid fuel. The torrefaction of biomass materials is considered to be a very promising technology for the promotion of the large-scale implementation of bioenergy. During torrefaction biomass is heated up in the absence of oxygen to a temperature of 250-320 C. By combining torrefaction with pelletisation or briquetting, biomass materials can be converted into a high-energy-density commodity solid fuel or bioenergy carrier with improved behaviour in (long-distance) transport, handling and storage, and also with superior properties in many major end-use applications. Torrefaction has the potential to provide a significant contribution to an enlarged raw material portfolio for biomass fuel production inside Europe by including both agricultural and forestry biomass. In this way, the SECTOR project is expected to shorten the time-to-market of torrefaction technology and to promote market introduction within stringent sustainability boundary conditions. The European Union provides funding for this project within the Seventh Framework Programme. The project has a duration of 42 months and started in January 2012. (orig.)

  12. Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

  13. Electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons

    International Nuclear Information System (INIS)

    Structures, stabilities, electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons (GyNRs) with armchair and zigzag edges are investigated using the self-consistent field crystal orbital method based on density functional theory. It is found that the 1D GyNRs are more stable than the 2D 6,6,12-graphyne sheet in the view of the Gibbs free energy. The stabilities of these GyNRs decrease as their widths increase. The calculated band structures show that all these GyNRs are semiconductors and that dependence of band gaps on the ribbon width is different from different types of the GyNRs. The carrier mobility was calculated based on the deformation theory and effective mass approach. It is found that the carrier mobilities of these GyNRs can reach the order of 105 cm2 V –1s–1 at room temperature and are comparable to those of graphene NRs. Moreover, change of the mobilities with change of the ribbon width is quite different from different types of the GyNRs

  14. Accumulated-carrier screening effect based investigation for pixellated CdZnTe radiation detector

    International Nuclear Information System (INIS)

    Using the pixellated CdZnTe detector,the radiation imaging experiment for the Rh target X-ray source was accomplished. The experimental results indicate that the response signals of the anode pixels, which distribute over the center irradiated area,are completely shut-off when the tube Jantage is 45 kV and the tube current increases to 20 μA. Moreover, the non-response pixel area expands with the increase of the tube current, and the total event count of the CdZnTe detector reduces obviously. Furthermore, the inner electric potential and electric field distributions of the pixellated CdZnTe detector were simulated based on the Poisson equation. The simulation results reveal that the accumulation of the hole carriers, which results from the extremely low drift ability of the hole carrier, leads to a relatively high space-charge-density area in the CdZnTe bulk when the irradiated photon flux increases to 5 x 105 mm-2·s-1. And thus, the induced signal screen effect of the anode pixels in the center irradiated area is mainly attributed to the distorted electric field which makes electron carriers drift toward the high potential area in the CdZnTe crystal instead of the pixel anodes. (authors)

  15. The transport of carriers and localization in a one-dimensional electron system over liquid helium

    International Nuclear Information System (INIS)

    The carrier mobility in an electron close to-one-dimensional' system over liquid helium is measured. The one-dimensional conducting channels were created using both the curvature of the liquid helium surface covering a profiled dielectric substrate and the pressing electric field which holds the electrons on the bottom of the liquid 'grooves'. The measurements were carried out in the temperature range 0.5-1.6 K with the interval of linear densities (0.5-2.5) 104cm1 and at the generator voltage ranged from 2 to 200 mV. It is shown that the electron mobility for a clean substrate is determined by the interaction with helium atoms in vapor and ripplon; the experimental results are in satisfactory agreement with the theoretical calculation made with the supposition of the absence of carrier localization. It is found that for substrates with surface charge or defects the mobility decreases in comparison with that for the clean substrate. At T<1 K the mobility is essentially independent of temperature or slightly decreases with it. It is found that the frequency of plasma oscillations propagating through the system of parallel channels increases with decreasing electron mobility. The effects observed may be explained by the localization in the one-dimensional system and the diffusive movement of the carriers hopped from one localization state to another

  16. Enhancement of the critical current of intrinsic Josephson junctions by carrier injection

    Science.gov (United States)

    Kizilaslan, O.; Simsek, Y.; Aksan, M. A.; Koval, Y.; Müller, P.

    2015-08-01

    We present a study of the doping effect by carrier injection of high-Tc superconducting Bi-based whiskers. The current was injected in the c-axis direction, i.e., perpendicular to the superconducting planes. Superconducting properties were investigated systematically as a function of the doping level. The doping level of one and the same sample was changed by current injection in very small steps from an underdoped state up to a slightly overdoped state. We have observed that Tc versus log (jc) exhibits a dome-shaped characteristic, which can be fitted by a parabola. As Tc versus carrier concentration has a parabolic form, too, it can be concluded that the critical current density jc increases exponentially with the doping level. The electron-trapping mechanism is interpreted in the framework of Phillips’ microscopic theory. In addition, the Joule heating effect in the intrinsic Josephson junction (IJJ) was controlled by carrier injection, and the effect of the non-equilibrium quasiparticle on the I-V curves of the IJJs was also discussed.

  17. Effect of different carrier gases and their flow rates on the growth of carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Tewari, Aarti; Sharma, Suresh C. [Department of Applied Physics, Delhi Technological University (DTU), Shahbad Daulatpur, Bawana Road, Delhi 110 042 (India)

    2015-04-15

    The present paper examines the effect of different carrier gases and their flow rates on the growth of carbon nanotubes (CNTs). A theoretical model is developed incorporating the charging rate of the carbon nanotube, kinetics of all the plasma species, and the growth rate of the CNTs because of diffusion and accretion of ions on the catalyst nanoparticle. The three different carrier gases, i.e., argon (Ar), ammonia, and nitrogen, are considered in the present investigation, and flow rates of all the three carrier gases are varied individually (keeping the flow rates of hydrocarbon and hydrogen gas constant) to investigate the variations in the number densities of hydrocarbon and hydrogen ions in the plasma and their consequent effects on the height and radius of CNT. Based on the results obtained, it is concluded that Ar favors the formation of CNTs with larger height and radius whereas ammonia contributes to better height of CNT but decreases the radius of CNT, and nitrogen impedes both the height and radius of CNT. The present work can serve to the better understanding of process parameters during growth of CNTs by a plasma enhanced chemical vapor deposition process.

  18. Carrier localization effect in polarized InGaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Zukauskas, A.; Kazlauskas, K.; Tamulaitis, G.; Mickevicius, J.; Jursenas, S.; Kurilcik, G.; Miasojedovas, S. [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9, Build. III, 10222 Vilnius (Lithuania); Springis, M.; Tale, I. [Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, Riga 1063 (Latvia); Cheng, Yung-Chen; Wang, Hsiang-Chen; Huang, Chi-Feng; Yang, C.C. [Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4, Taipei (Taiwan)

    2005-05-01

    Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d, and In content, x. Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time-resolved PL spectroscopy, the dominance of the localization effect against the built-in field effect on carrier recombination dynamics in In{sub x}Ga{sub 1-x}N MQWs of different well width (d = 2.0-4.0 nm, x {approx} 0.15) and In content (x {approx} 0.22-0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content and well width were found to increase the band potential fluctuations and carrier localization depth. The density of localized states deduced from the simulation was found to be in a fair agreement with the PLE data. The built-in field strength in InGaN QWs containing 15% of In was estimated to be of 0.5 MV/cm. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Electromigration of carrier-free radionuclides. 13

    International Nuclear Information System (INIS)

    Using a special type of on line electromigration measurements of γ-emitting radionuclides in homogeneous aqueous electrolytes free of supporting materials the electromigration behaviour of the carrier-free 241Am-Am(III) in inert electrolytes, μ = 0.1 (ClO4-), T = 298.1(1) K, was studied. Basing on experimental dependencies of the overall ion mobilities of 241Am-Am(III) on pH between pH 5.5 and 12.9 the stoichiometric hydrolysis constants pβ3 = 28.8(9) and pK1 = 6.9(2) were obtained. For K4 a limitation of pK4 > 13.9(3) was possible, because no formation of anionic hydrolysis products in solutions pH 241Am-Am(III) degrees in the range pH 5.5 - 3 from +6.85(15) up to +5.50(15) · 10-4 cm2s-1V-1. Dependencies of this effect on overall ionic strength, inert electrolyte anion, and temperature of the electrolytes were studied in detail both in acidic and neutral solutions. (author)

  20. Mitochondrial pyruvate carrier in Trypanosoma brucei.

    Science.gov (United States)

    Štáfková, Jitka; Mach, Jan; Biran, Marc; Verner, Zdeněk; Bringaud, Frédéric; Tachezy, Jan

    2016-05-01

    Pyruvate is a key product of glycolysis that regulates the energy metabolism of cells. In Trypanosoma brucei, the causative agent of sleeping sickness, the fate of pyruvate varies dramatically during the parasite life cycle. In bloodstream forms, pyruvate is mainly excreted, whereas in tsetse fly forms, pyruvate is metabolized in mitochondria yielding additional ATP molecules. The character of the molecular machinery that mediates pyruvate transport across mitochondrial membrane was elusive until the recent discovery of mitochondrial pyruvate carrier (MPC) in yeast and mammals. Here, we characterized pyruvate import into mitochondrion of T. brucei. We identified mpc1 and mpc2 homologs in the T. brucei genome with attributes of MPC protein family and we demonstrated that both proteins are present in the mitochondrial membrane of the parasite. Investigations of mpc1 or mpc2 gene knock-out cells proved that T. brucei MPC1/2 proteins facilitate mitochondrial pyruvate transport. Interestingly, MPC is expressed not only in procyclic trypanosomes with fully activated mitochondria but also in bloodstream trypanosomes in which most of pyruvate is excreted. Moreover, MPC appears to be essential for bloodstream forms, supporting the recently emerging picture that the functions of mitochondria in bloodstream forms are more diverse than it was originally thought. PMID:26748989

  1. Drug Carrier for Photodynamic Cancer Therapy

    Directory of Open Access Journals (Sweden)

    Tilahun Ayane Debele

    2015-09-01

    Full Text Available Photodynamic therapy (PDT is a non-invasive combinatorial therapeutic modality using light, photosensitizer (PS, and oxygen used for the treatment of cancer and other diseases. When PSs in cells are exposed to specific wavelengths of light, they are transformed from the singlet ground state (S0 to an excited singlet state (S1–Sn, followed by intersystem crossing to an excited triplet state (T1. The energy transferred from T1 to biological substrates and molecular oxygen, via type I and II reactions, generates reactive oxygen species, (1O2, H2O2, O2*, HO*, which causes cellular damage that leads to tumor cell death through necrosis or apoptosis. The solubility, selectivity, and targeting of photosensitizers are important factors that must be considered in PDT. Nano-formulating PSs with organic and inorganic nanoparticles poses as potential strategy to satisfy the requirements of an ideal PDT system. In this review, we summarize several organic and inorganic PS carriers that have been studied to enhance the efficacy of photodynamic therapy against cancer.

  2. European retrievable carrier Eureca servicing by Hermes

    Science.gov (United States)

    Kerstein, L.; Dettmer, J.; Rath, W.

    1987-09-01

    It has been demonstrated that HERMES with a cargo bay configuration as depicted in figure 1 (5 m length, 3 m diam.) with Handling and Positioning Aid (HPA) and HERMES Robotic Arm (HERA) is capable to service a small platform like EURECA, which is an NSTS quarter payload. Only 1/3 of the HERMES cargo bay volume and payload mass is required for the accommodation of the payload Orbital Replaceable Units. By implementing two additional hydrazine tanks refuelling can be avoided for a two-years EURECA mission. The overall servicing configuration is described as follows: The European Retrievable Carrier EURECA-B is mechanically attached through its -y-side sill trunnion to the HERMES berthing port. The HERMES cargo bay doors with radiators are opened and oriented to earth. The HERMES Robotic Arm is equipped with a Module Service Tool (MST) ready for Orbital Replaceable Unit (ORU) exchange. The HERMES berthing port is located at the rear side of the cargo bay in order to achieve best visibility, clearance and accessibility of the HERMES Robotic Arm operation within the cargo bay and the EURECA payload area. The EURECA solar arrays and antennas remain deployed. During the servicing operation, power will be provided by the fully deployed solar arrays. In order to minimize the plume impingement effect, the solar array edge is directed to the HERMES wing.

  3. MEASUREMENT OF WHEAT DENSITY

    Institute of Scientific and Technical Information of China (English)

    冯跟胜; 党金春; 等

    1995-01-01

    A method used for on line determining the change of wheat density with a automatic watering machine in a lqarge flour mill has been studied.The results show that the higher distinguishing ability is obtained when using 241Am as a γ-ray source for measuring the wheat density than using 137Cs.

  4. Multi-carrier Equalization by Restoration of RedundancY (MERRY) for Adaptive Channel Shortening in Multi-carrier Systems

    OpenAIRE

    Samir Abd Elghafar; Salaheldin M. Diab; Sallam, Bassiouny M.; Moawad I. Dessouky; El-Sayed M. El-Rabaie; Fathi E. Abd El-Samie

    2013-01-01

    This paper proposes a new blind adaptive channel shortening approach for multi-carrier systems. Theperformance of the discrete Fourier transform-DMT (DFT-DMT) system is investigated with the proposedDST-DMT system over the standard carrier serving area (CSA) loop1. Enhanced bit rates demonstratedand less complexity also involved by the simulationof the DST-DMT system.

  5. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    International Nuclear Information System (INIS)

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED

  6. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    Science.gov (United States)

    Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

    2015-07-01

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  7. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun [Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China); Leung, Benjamin; Han, Jung [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Yang, Fann-Wei [Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China); Wang, Hsiang-Chen [Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  8. Non local density functionals

    International Nuclear Information System (INIS)

    The performance of approximations to the Hohenberg-Kohn-Sham density functionals is tested by comparing with essentially exact results for light atoms (the He isoelectronic series, Be, and Ne). The approximation schemes considered here are the effective gradient schemes due to Langreth and Mehl (LM), and the -modified weighted density- (MWD) approximation due to Gunnarsson and Jones. Compared to the local-density (LD) approximation the LM schemes give markedly better exchange-correlation energies and a certain improvement of density profiles, effective potentials, and orbital eigenvalues. The MWD scheme gives improvements for the exchange-correlation energies but not for the densities, potentials, or eigenvalues. The sensitivity of the MWD scheme with respect to the model pair correlation used, as well as some additional approximations used in practical applications of the MWD scheme, are also analysed. (author)

  9. Learning Grasp Affordance Densities

    DEFF Research Database (Denmark)

    Detry, Renaud; Kraft, Dirk; Kroemer, Oliver;

    2011-01-01

    records their outcomes. When a satisfactory number of grasp data is available, an importance-sampling algorithm turns these into a grasp density. We evaluate our method in a largely autonomous learning experiment run on three objects of distinct shapes. The experiment shows how learning increases success......We address the issue of learning and representing object grasp affordance models. We model grasp affordances with continuous probability density functions (grasp densities) which link object-relative grasp poses to their success probability. The underlying function representation is nonparametric...... and relies on kernel density estimation to provide a continuous model. Grasp densities are learned and refined from exploration, by letting a robot “play” with an object in a sequence of graspand-drop actions: The robot uses visual cues to generate a set of grasp hypotheses; it then executes these and...

  10. Contribution of Drifting Carriers to the Casimir-Lifshitz and Casimir-Polder Interactions With Semiconductor Materials

    International Nuclear Information System (INIS)

    We develop a theory for Casimir-Lifshitz and Casimir-Polder interactions with semiconductor or insulator surfaces that takes into account charge drift in the bulk material through use of the classical Boltzmann equation. We derive frequency-dependent dispersion relations that give the usual Lifshitz results for dielectrics as a limiting case and, in the quasistatic limit, coincide with those recently computed to account for Debye screening in the thermal Lifshitz force with conducting surfaces with small density of carriers

  11. Characterization of temperature-dependent carrier transport in disordered indium-tin-oxide/poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate)/polyfluorene/Ca/Al polymer structures

    International Nuclear Information System (INIS)

    The temperature-dependent electrical characteristics of polyfluorene-based polymer structures over a temperature range from 200 to 300 K are systematically investigated in this study. Initially, using the definitions of the Berthelot-type model, it is found that the sample exhibits a higher Berthelot-type temperature TB with high driving voltage, indicating that carrier transport in a disordered system manifests Berthelot-type behaviors. The ideal current density-voltage curve for the polymer structures given the carrier transmit mechanism is further elucidated by taking into account the ohmic conduction, trap charge limited current, and Mott and Gurney model of space charge limited current. The proposed procedure is simple and can be used to characterize the material with reasonable accuracy. We also study the density of the traps Ht, and the characteristic energy of the distribution Et to better understand the carrier-transport process in organic materials and structures.

  12. Importance of Avidity in Endogenous Drug Carrier: Antibody Carrier for CpG Oligonucleotides

    OpenAIRE

    Cheung, Roland; Cho, Moo

    2010-01-01

    In animal models, successful anti-cancer monotherapy with CpG oligodeoxynucleotide (ODN) has been limited to the intratumoral and peritumoral routes of administration. To overcome this limitation, we developed a delivery system utilizing an endogenous antibody as a carrier for CpG ODNs. When a 1:1 conjugate of 2,4-dinitrophenyl (DNP) to a CpG ODN was administered to tumor-bearing mice that were pre-immunized against DNP, intravenous (IV) administration successfully inhibited tumor growth.1 In...

  13. Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

    International Nuclear Information System (INIS)

    The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p—i—n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm2 to 0.95 mA/cm2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells. (interdisciplinary physics and related areas of science and technology)

  14. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    values extracted from OPTP measurements and their dependence on perovskite composition and morphology. The significance of the reviewed charge-carrier recombination and mobility parameters is subsequently evaluated in terms of the charge-carrier diffusion lengths and radiative efficiencies that may be obtained for such hybrid perovskites. We particularly focus on calculating such quantities in the limit of ultra-low trap-related recombination, which has not yet been demonstrated but could be reached through further advances in material processing. We find that for thin films of hybrid lead iodide perovskites with typical charge-carrier mobilities of ∼30cm(2)/(V s), charge-carrier diffusion lengths at solar (AM1.5) irradiation are unlikely to exceed ∼10 μm even if all trap-related recombination is eliminated. We further examine the radiative efficiency for hybrid lead halide perovskite films and show that if high efficiencies are to be obtained for intermediate charge-carrier densities (n ≈ 10(14) cm(-3)) trap-related recombination lifetimes will have to be enhanced well into the microsecond range. PMID:26653572

  15. Utilization of Waste Materials for Microbial Carrier in Wastewater Treatment

    Directory of Open Access Journals (Sweden)

    H. T. Le

    2016-01-01

    Full Text Available This research focused on the ammonium-nitrogen (NH4-N removal from the domestic wastewater using the attached growth reactors. Two types of waste material of corncob (biodegradable material and concrete (nonbiodegradable material were used as the carrier for microorganisms’ attachment. During operation, both reactors achieved absolutely high performance of ammonium removal (up to 99% and total nitrogen removal (up to 95%. The significant advantage of corncob carrier was that the corncob was able to be a source of carbon for biological denitrification, leading to no external carbon requirement for operating the system. However, the corncob caused an increasing turbidity of the effluent. On the other hand, the concrete carrier required the minimal external carbon of 3.5 C/N ratio to reach the good performance. Moreover, a longer period for microorganisms’ adaptation was found in the concrete carrier rather than the corncob carrier. Further, the same physiological and biochemical characteristics of active bacteria were found at the two carriers, which were negative gram, cocci shape, and smooth and white-turbid colony. Due to the effluent quality, the concrete was more appropriate carrier than the corncob for wastewater treatment.

  16. An Efficient Inter Carrier Interference Cancellation Schemes for OFDM Systems

    Directory of Open Access Journals (Sweden)

    B. Sathish Kumar

    2009-12-01

    Full Text Available Orthogonal Frequency Division Multiplexing (OFDM has recently been used widely in wireless communication systems. OFDM is very effective in combating inter-symbol interference and can achieve high data rate in frequency selective channel. For OFDM communication systems, the frequency offsets in mobile radio channels distort the orthogonality between subcarriers resulting in Inter Carrier Interference (ICI. ICI causes power leakage among subcarriers thus degrading the system performance. A well-known problem of OFDM is its sensitivity to frequency offset between the transmitted and received carrier frequencies. There are two deleterious effects caused by frequency offset one is the reduction of signal amplitude in the output of the filters matched to each of the carriers and the second is introduction of ICI from the other carriers. This research work investigates three effective methods for combating the effects of ICI: ICI Self Cancellation (SC, Maximum Likelihood (ML estimation, and Extended Kalman Filter (EKF method. These three methods are compared in terms of bit error rate performance and bandwidth efficiency. Through simulations, it is shown that the three techniques are effective in mitigating the modulation schemes, the ML and EKF methods perform better than the SC method.Keywords- Orthogonal frequency Division Multiplexing (OFDM; Inter Carrier Interference(ICI; Carrier to Interference Power Ratio (CIR;Self Cancellation(SC;Carrier Frequency Offset (CFO; Maximum Likelihood(ML; Extended Kalman Filtering(EKF.

  17. Analysis of Ionospheric Delay Estimates from GNSS Carrier Phase Measurements

    Science.gov (United States)

    Gao, Yang

    2016-07-01

    There is an increased demand for more precise ionospheric information such as ionospheric augmentation for fast ambiguity convergence and resolution in real-time kinematic (RTK) and precise point positioning (PPP). More precise ionospheric information is also highly desired to improve the understanding of the space weather dynamics and its impacts on various applications such as aviation and communication systems. Carrier phase measurements from GNSS offer the best precision for precise applications. Current ionospheric models, however, are mostly derived from code or carrier-smoothed code measurements. Ionopsheric models based on carrier phase measurements are expected to provide improved accuracy and should be investigated. In this contribution, various data analyses will be conducted on ionospheric estimates from carrier phase measurements. Since carrier phase measurements are ambiguous and they are also affected by fractional biases, proper observation model is necessary and will be developed. With proper observation model, the analysis results are used to investigate the differences and characteristics of the ionospheric estimates between the code and carrier phase derived estimates and subsequently to help develop methods for precise estimation of the biases in carrier phase measurements and the recovery of the ionospheric effects. Data acquired at different geographic locations and under different ionospheric conditions will be processed for numerical analysis.

  18. Kinetics of Ca2+ carrier in rat liver mitochondria.

    Science.gov (United States)

    Bragadin, M; Pozzan, T; Azzone, G F

    1979-12-25

    The rate of aerobic Ca2+ transport is limited by the rate of the H+ pump rather than by the Ca2+ carrier. The kinetics of the Ca2+ carrier has therefore been studied by using the K+ diffusion potential as the driving force. The apparent Vmax of the Ca2+ carrier is, at 20 degrees C, about 900 nmol (mg of protein)-1 min-1, more than twice the rate of the H+ pump. The apparent Vmax is depressed by Mg2+ and Li+. This supports the view that the electrolytes act as noncompetitive inhibitors of the Ca2+ carrier. The degree of sigmoidicity of the kinetics of Ca2+ transport increases with the lowering of the temperature and proportionally with the concentration of impermeant electrolytes such as Mg2+ and Li+ but not choline. The effects of temperature and of electrolyte do not support the view that the sigmoidicity is due to modifications of the surface potential. Rather, they suggest that Ca2+ transport occurs through a multisubunit carrier, where cooperative phenomena are the result of ligand-induced conformational changes due to the interaction of several allosteric effectors with the carrier subunits. In contrast with La3+ which acts as a competitive inhibitor, Ruthenium Red affects the kinetics by inducing phenomena both of positive and of negative cooperativity. The Ruthenium Red induced kinetics has been reproduced through curve-fitting procedures by applying the Koshland sequential interaction hypothesis to a four-subunit Ca2+ carrier model. PMID:42437

  19. Hybrid nanostructured drug carrier with tunable and controlled drug release

    International Nuclear Information System (INIS)

    We describe here a transformative approach to synthesize a hybrid nanostructured drug carrier that exhibits the characteristics of controlled drug release. The synthesis of the nanohybrid architecture involved two steps. The first step involved direct crystallization of biocompatible copolymer along the long axis of the carbon nanotubes (CNTs), followed by the second step of attachment of drug molecule to the polymer via hydrogen bonding. The extraordinary inorganic–organic hybrid architecture exhibited high drug loading ability and is physically stable even under extreme conditions of acidic media and ultrasonic irradiation. The temperature and pH sensitive characteristics of the hybrid drug carrier and high drug loading ability merit its consideration as a promising carrier and utilization of the fundamental aspects used for synthesis of other promising drug carriers. The higher drug release response during the application of ultrasonic frequency is ascribed to a cavitation-type process in which the acoustic bubbles nucleate and collapse releasing the drug. Furthermore, the study underscores the potential of uniquely combining CNTs and biopolymers for drug delivery. - Graphical abstract: Block-copolymer crystallized on carbon nanotubes (CNTs). Nanohybrid drug carrier synthesized by attaching doxorubicin (DOX) to polymer crystallized CNTs. Crystallized polymer on CNTs provide mechanical stability. Triggered release of DOX. Highlights: ► The novel synthesis of a hybrid nanostructured drug carrier is described. ► The drug carrier exhibits high drug loading ability and is physically stable. ► The high drug release is ascribed to a cavitation-type process.

  20. Inner magnetosphere plasma densities

    International Nuclear Information System (INIS)

    The radio plasma imager (RPI) on the IMAGE satellite performs radio sounding in the magnetosphere, transmitting coded signals stepping through the frequency range of interest and receiving the returned echoes. The measurements provide the echo amplitude as a function of frequency and echo delay time on a so-called plasmagram. A newly developed algorithm inverts THE echo traces on a plasmagram to electron density spatial distributions. Based on these observed density distributions, an empirical model is constructed to describe the two-dimensional density distribution in the inner magnetosphere. (author)

  1. High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies

    International Nuclear Information System (INIS)

    In this paper, we focus on the high resistivity of intentionally undoped CdTe, where the most prevalent defects are Cd vacancies and Te antisites. Our calculated formation energies lead to the conclusion that the Fermi energy of undoped CdTe is at midgap due to carrier compensation of Te antisites and Cd vacancies, which explains the experimentally observed high resistivity. We use density functional theory with the hybrid functional of Heyd, Scuseria and Ernzerhof (HSE06) and show that the proper description of the native defects in general fails using the local density approximation (LDA) instead of HSE06. We conclude that LDA is insufficient to understand the high resistivity of undoped CdTe. We calculate the neutral and double acceptor state of the Te antisite to be intrinsic DX-centers. (paper)

  2. Recent advances in topical formulation carriers of antifungal agents.

    Science.gov (United States)

    Bseiso, Eman Ahmed; Nasr, Maha; Sammour, Omaima; Abd El Gawad, Nabaweya A

    2015-01-01

    Fungal infections are amongst the most commonly encountered diseases affecting the skin. Treatment approaches include both topical and oral antifungal agents. The topical route is generally preferred due to the possible side effects of oral medication. Advances in the field of formulation may soon render outdated conventional products such as creams, ointments and gels. Several carrier systems loaded with antifungal drugs have demonstrated promising results in the treatment of skin fungal infections. Examples of these newer carriers include micelles, lipidic systems such as solid lipid nanoparticles and nanostructured lipid carriers, microemulsions and vesicular systems such as liposomes, niosomes, transfersomes, ethosomes, and penetration enhancer vesicles. PMID:26261140

  3. DNA-mediated gene transfer without carrier DNA

    OpenAIRE

    1981-01-01

    DNA-mediated gene transfer is a procedure which uses purified DNA to introduce new genetic elements into cells in culture. The standard DNA- mediated gene transfer procedure involves the use of whole cell DNA as carrier DNA for the transfer. We have modified the standard DNA- mediated gene transfer procedure to transfer the Herpes simplex virus type 1 thymidine kinase gene (TK) into TK- murine recipient cells in the absence of whole cell carrier DNA. The majority (8/10) of carrier- free trans...

  4. Do Low Cost Carriers Provide Low Quality Service?

    Directory of Open Access Journals (Sweden)

    Tejashree Sayanak

    2008-03-01

    Full Text Available This paper addresses the question of whether low cost carriers provide low quality service. Considerable work has been done on various aspects of airline service quality, including: examining the causes of flight delays and cancellations, investigating service quality during irregular airport operations, and exploring the link between on-time performance and airline ticket prices. Little research has been conducted, however, on the performance of low cost carriers. This paper attempts to fill this void in the literature by examining the on-time performance of six million domestic flights in 2006. We find considerable evidence indicating that low cost carriers offer more reliable flight schedules.

  5. Subcutaneous administration of carrier erythrocytes: slow release of entrapped agent

    International Nuclear Information System (INIS)

    Carrier erythrocytes administered subcutaneously in mice release encapsulated molecules at the injection site and through cells that escape the injection site. One day postinjection, the efflux of encapsulated [14C]sucrose, [3H]inulin, and 51Cr-hemoglobin from the injection site was 45, 55, and 65%, respectively. Intact carrier erythrocytes escaped the injection site and entered the blood circulation carrying with them the encapsulated molecules. Most of the encapsulated [3H]inulin that reached whole blood circulated within erythrocytes. Small but measurable numbers of encapsulated molecules were trapped within lymph nodes. Subcutaneous injection of carrier erythrocytes may allow for limited extravascular tissue targeting of drugs

  6. Wafer-scale characterization of carrier dynamics in graphene

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Petersen, Dirch Hjorth; Bøggild, Peter;

    2015-01-01

    The electronic properties of single-layer graphene, such as surface conductance, carrier concentration, scattering time and mobility, can be characterized in a noncontact manner by THz time-domain spectroscopy. Standard spectroscopic imaging reveals the AC conductance over large areas with a few...... hundred μm resolution, and spectroscopic imaging on back-gated graphene allows for extraction of both the carrier concentration and the mobility. We find that spatial variations of the conductance of single-layer CVD-grown graphene are predominantly due to variations in mobility rather than in carrier...

  7. Safety and environmental aspects in LNG carrier design

    International Nuclear Information System (INIS)

    'Safety and Reliability' has been and will continue to be a key phr ase in marine transportation of LNG. Mitsui Engineering and Shipbuilding Co.,Ltd. has utilized its all expertise and state of art technologies to realize this objective, resulting in exceptionally successful operations of LNG carrier built by the Co. In line with growing global concern about environmental issues, we need to pay more attention to the environmental aspects of the design and construction of LNG carriers. Accordingly, in this paper, we present some topics related safety and environmental concerns which need to be taken into consideration in LNG carriers design and construction. (Author). 7 figs

  8. Recent advances in topical formulation carriers of antifungal agents

    Directory of Open Access Journals (Sweden)

    Eman Ahmed Bseiso

    2015-01-01

    Full Text Available Fungal infections are amongst the most commonly encountered diseases affecting the skin. Treatment approaches include both topical and oral antifungal agents. The topical route is generally preferred due to the possible side effects of oral medication. Advances in the field of formulation may soon render outdated conventional products such as creams, ointments and gels. Several carrier systems loaded with antifungal drugs have demonstrated promising results in the treatment of skin fungal infections. Examples of these newer carriers include micelles, lipidic systems such as solid lipid nanoparticles and nanostructured lipid carriers, microemulsions and vesicular systems such as liposomes, niosomes, transfersomes, ethosomes, and penetration enhancer vesicles.

  9. Carrier-envelope-phase stabilization via dual wavelength pumping.

    Science.gov (United States)

    Seidel, Marcus; Brons, Jonathan; Lücking, Fabian; Pervak, Vladimir; Apolonski, Alexander; Udem, Thomas; Pronin, Oleg

    2016-04-15

    A power-scalable concept for carrier-envelope-phase stabilization is presented. It takes advantage of simultaneous pumping of the zero- and first-phonon absorption line of Yb:YAG at 969 and 940 nm. The concept was implemented to lock the carrier-envelope-offset frequency of a 45 W average power Kerr-lens mode-locked thin-disk oscillator. The lock performance is compared to previous experiments where carrier-envelope-stabilization was realized by means of cavity loss modulation. PMID:27082362

  10. Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

    International Nuclear Information System (INIS)

    Novel silicon photonics applications requiring heavy n-type doping have recently driven a great deal of interest towards the phosphorous doping of germanium. In this work we report on infrared reflectance spectroscopy measurements of the electron density in heavily n-type doped germanium layers obtained by stacking multiple phosphorous δ-layers. Here, we demonstrate that the conventional Drude model of the electrodynamic response of free carriers in metals can be adapted to describe heavily doped semiconductor thin films. Consequently, the effect of the electron density on the plasma frequency, scattering rate and complex permittivity can be investigated. (special issue article)

  11. Novel Anti-Nicotine Vaccine Using a Trimeric Coiled-Coil Hapten Carrier.

    Directory of Open Access Journals (Sweden)

    Keith D Miller

    Full Text Available Tobacco addiction represents one of the largest public health problems in the world and is the leading cause of cancer and heart disease, resulting in millions of deaths a year. Vaccines for smoking cessation have shown considerable promise in preclinical models, although functional antibody responses induced in humans are only modestly effective in preventing nicotine entry into the brain. The challenge in generating serum antibodies with a large nicotine binding capacity is made difficult by the fact that this drug is non-immunogenic and must be conjugated as a hapten to a protein carrier. To circumvent the limitations of traditional carriers like keyhole limpet hemocyanin (KLH, we have synthesized a short trimeric coiled-coil peptide (TCC that creates a series of B and T cell epitopes with uniform stoichiometry and high density. Here we compared the relative activities of a TCC-nic vaccine and two control KLH-nic vaccines using Alum as an adjuvant or GLA-SE, which contains a synthetic TLR4 agonist formulated in a stable oil-in-water emulsion. The results showed that the TCC's high hapten density correlated with a better immune response in mice as measured by anti-nicotine Ab titer, affinity, and specificity, and was responsible for a reduction in anti-carrier immunogenicity. The Ab responses achieved with this synthetic vaccine resulted in a nicotine binding capacity in serum that could prevent >90% of a nicotine dose equivalent to three smoked cigarettes (0.05 mg/kg from reaching the brain.

  12. Bone mineral density test

    Science.gov (United States)

    ... Paula FJA, Black DM, Rosen CJ. Osteoporosis and bone biology.In: Melmed S, Polonsky KS, Larsen PR, Kronenberg HM, eds. Williams Textbook of Endocrinology . 13th ed. Philadelphia, ... Bone-density testing interval and transition to osteoporosis in ...

  13. Bone mineral density test

    Science.gov (United States)

    BMD test; Bone density test; Bone densitometry; DEXA scan; DXA; Dual-energy x-ray absorptiometry; p-DEXA; Osteoporosis-BMD ... need to undress. This scan is the best test to predict your risk of fractures. Peripheral DEXA ( ...

  14. Genetics of Bone Density

    Science.gov (United States)

    ... Density Clues to Emerging Drug-Resistant Malaria Molecular Effects of Social Stress Connect with Us Subscribe to get NIH Research Matters by email RSS Feed Facebook Email us Mailing Address: NIH Research Matters Bldg. ...

  15. A pseudodeficiency allele common in non-Jewish Tay-Sachs carriers: Implications for carrier screening

    Energy Technology Data Exchange (ETDEWEB)

    Triggs-Raine, B.L.; Akerman, B.R.; Gravel, R.A. (McGill Univ.-Montreal Children' s Hospital Research Institute, Montreal, Quebec (Canada)); Mules, E.H.; Thomas, G.H.; Dowling, C.E. (Johns Hopkins School of Medicine, Baltimore, MD (United States)); Kaback, M.M.; Lim-Steele, J.S.T. (Univ. of California, San Diego, CA (United States)); Natowicz, M.R. (Eunice Kennedy Shriver Center for Mental Retardation, Waltham, MA (United States)); Grebner, E.E. (Thomas Jefferson Univ., Philadelphia, PA (United States)); Navon, R.R. (Tel-Aviv Univ., Kfar-Sava (Israel)); Welch, J.P. (Dalhousie Univ., Halifax, Nova, Scotia (Canada)); Greenberg, C.R. (Univ. of Manitoba, Winnipeg (Canada))

    1992-10-01

    Deficiency of [beta]-hexosaminidase A (Hex A) activity typically results in Tay-Sachs disease. However, healthy subjects found to be deficient in Hex A activity (i.e., pseudodeficient) by means of in vitro biochemical tests have been described. The authors analyzed the HEXA gene of one pseudodeficient subject and identified both a C[sub 739]-to-T substitution that changes Arg[sub 247][yields]Trp on one allele and a previously identified Tay-Sachs disease mutation of the second allele. Six additional pseudodeficient subjects were found to have the C[sub 739]-to-T but for none of 36 Jewish enzyme-defined carries who did not have one of three known mutations common to this group. The C[sub 739]-to-T allele, together with a [open quotes]true[close quotes] Tay-Sachs disease allele, causes Hex A pseudodeficiency. Given both the large proportion of non-Jewish carriers with this allele and that standard biochemical screening cannot differentiate between heterozygotes for the C[sub 739]-to-T mutations and Tay-Sachs disease carriers, DNA testing for this mutation in at-risk couples is essential. This could prevent unnecessary or incorrect prenatal diagnoses. 40 refs., 3 figs., 4 tabs.

  16. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Paul M., E-mail: paul.jordan@namlab.com; Simon, Daniel K.; Dirnstorfer, Ingo [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Technische Universität Dresden, Institut für Halbleiter- und Mikrosystemtechnik, 01062 Dresden (Germany)

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  17. Nuclear level density predictions

    OpenAIRE

    Bucurescu Dorel; von Egidy Till

    2015-01-01

    Simple formulas depending only on nuclear masses were previously proposed for the parameters of the Back-Shifted Fermi Gas (BSFG) model and of the Constant Temperature (CT) model of the nuclear level density, respectively. They are now applied for the prediction of the level density parameters of all nuclei with available masses. Both masses from the new 2012 mass table and from different models are considered and the predictions are discussed in connection with nuclear regions most affected ...

  18. Energy in density gradient

    OpenAIRE

    Vranjes, J.; Kono, M

    2015-01-01

    Inhomogeneous plasmas and fluids contain energy stored in inhomogeneity and they naturally tend to relax into lower energy states by developing instabilities or by diffusion. But the actual amount of energy in such inhomogeneities has remained unknown. In the present work the amount of energy stored in a density gradient is calculated for several specific density profiles in a cylindric configuration. This is of practical importance for drift wave instability in various plasmas, and in partic...

  19. Aging in Fragile X Premutation Carriers.

    Science.gov (United States)

    Lozano, Reymundo; Saito, Naomi; Reed, Dallas; Eldeeb, Marwa; Schneider, Andrea; Hessl, David; Tassone, Flora; Beckett, Laurel; Hagerman, Randi

    2016-10-01

    It is now recognized that FMR1 premutation carriers (PC) are at risk to develop a range of neurological, psychiatric, and immune-mediated disorders during adulthood. There are conflicting findings regarding the incidence of hypertension, hypothyroidism, diabetes, and cancer in these patients that warrant further study. A retrospective controlled study was performed in a convenience sample of 248 controls (130 men, 118 women) and 397 FMR1 PC with and without fragile X-associated tremor ataxia syndrome (FXTAS) (176 men, 221 women); all participants were at least 45 years old (men: mean 62.4, SD 9.5; women: mean 62.8, SD 9.9; p = 0.63). Memory and cognitive assessments (Wechsler Adult Intelligence Scale (WAIS-III), Wechsler Memory Scale (WMS-III)) and molecular testing (CGG repeats and FMR1-mRNA levels) were performed. Additional data included body mass index (BMI), cholesterol levels, blood pressure, hemoglobin A1c (HbA1c) levels, and medical history. A higher percentage of PC subjects self-reported having a diagnosis of hypertension (50.0 vs. 35.0 %, p = 0.006) and thyroid problems (20.4 vs. 10.0 %, p = 0.012) than control subjects. When comparing controls versus PC with FXTAS, the association was higher for diabetes (p = 0.043); however, the effect was not significant after adjusting for demographic predictors. Blood pressure, blood glucose levels, HbA1c, and BMI values were not significantly different between the two groups. The PC with FXTAS group performed consistently lower in neuropsychological testing compared with the PC without FXTAS group, but the differences were very small for all but the WAIS full-scale IQ. Based on these findings, it appears that the risk for hypertension, thyroid problems, and diabetes may be more frequent in PC with FXTAS, which will require verification in future studies. PMID:27334385

  20. Allothermal gasification of biomass into chemicals and secondary energy carriers

    Energy Technology Data Exchange (ETDEWEB)

    Zwart, R.W.R. [ECN Biomass, Coal and Environmental Research, Petten (Netherlands)

    2009-09-15

    The outline of this presentation on the title subject states: Motivation for polygeneration; Allothermal gasification: the MILENA at ECN; Primary gas cleaning: the OLGA for tar removal; Possible secondary energy carriers; Possible chemicals; Polygeneration concept and its feasibility.

  1. Next-generation carrier screening: are we ready?

    OpenAIRE

    Thomas W Prior

    2014-01-01

    Editorial summary Next-generation sequencing (NGS) methodology allows for a major expansion in current carrier screening tests. NGS testing has been shown to be analytically accurate and cost-effective, but major challenges include educational and counseling issues.

  2. Synthetic heat carrier oil compositions based on polyalkylene glycols

    International Nuclear Information System (INIS)

    The results of syntheses of heat carrier oils based on polyalkylene glycols (PAGs) using suitable additives have been reported. Polyalkylene glycols have been prepared by heating diethylene glycol, propylene oxide, glycols, adipic acid and 2-ethyhexanol in the presence of KOH and stannyl octoate as catalyst in the molar ratio to give proper physical properties and viscosity-temperature index. The prepared PAGs have been taken as basic components for heat carrier oil compositions. In order to improve the thermal stability and viscosity indices, as well as other specifications, anti-oxidant and anti-foaming additives were added to the base material to reach optimum compositions. Thermal stability, mass loss on vaporization at 250 oC, 350 oC and changing the specifications after heating at 300 oC for 10 h have also been investigated. The obtained heat carrier oils showed comparable improved properties in comparison with commercially available heat carriers

  3. Study of Charge Carrier Transport in GaN Sensors

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2016-04-01

    Full Text Available Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  4. GUI Application for ATCA-based LLRF Carrier Board Management

    CERN Document Server

    Wychowaniak, Jan; Predki, Pawel; Napieralski, Andrzej

    2011-01-01

    The Advanced Telecommunications Computing Architecture (ATCA) standard describes an efficient and powerful platform, implementation of which was adopted to be used as a base for control systems in high energy physics. The ATCA platform is considered to be applied for the X-ray Free Electron Laser (X-FEL), being built at Deutsches Electronen- Synchrotron (DESY) in Hamburg, Germany. The Low Level Radio Frequency (LLRF) control system is composed of a few ATCA Carrier Boards. Carrier Board hosts Intelligent Platform Management Controller (IPMC), which is developed in compliance with the PICMG specifications. IPMC is responsible for management and monitoring of sub-modules installed on Carrier Boards and pluggable Advanced Mezzanine Card (AMC) modules. The ATCA Shelf Manager is the main control unit of a single ATCA crate, responsible for all power and fan modules and Carrier Boards installed in ATCA shelf. The device provides a system administrator with a set of control and diagnostic capabilities regarding the ...

  5. Salmonella enterica Serovar Typhi Variants in Long-Term Carriers

    OpenAIRE

    Chiou, Chien-Shun; Wei, Hsiao-Lun; Mu, Jung-Jung; Liao, Ying-Shu; Liang, Shiu-Yun; Liao, Chun-Hsing; Tsao, Chi-Sen; Wang, Shu-Chuan

    2013-01-01

    Long-term typhoid carriers can simultaneously excrete Salmonella enterica serovar Typhi variants with considerable genetic differences, a situation that complicates the interpretation of the subtyping data used in outbreak investigations and disease surveillance.

  6. Plasmonic Hot Carrier Transport and Collection in Nanostructures

    Science.gov (United States)

    Jermyn, Adam; Sundararaman, Ravishankar; Narang, Prineha; Goddard, William; Atwater, Harry; Joint CenterArtificial Photosynthesis Collaboration

    2015-03-01

    Plasmonic resonances provide a promising pathway for efficiently capturing photons from solar radiation and improving photo-catalytic activity via hot carrier generation. Previous calculations have provided the prompt energy-momentum distributions of hot carriers, but have left open the question of their transport to collection surfaces [Accepted in Nature Communications]. As the overall efficiency of plasmonic devices is dependent not just on how many carriers are collected but also on their energy distribution, a transport model which tracks this distribution is of key importance. Here, we provide a first-principles model of this transport based upon at the linearized Boltzmann equation with the diffusive and ballistic regimes handled separately, and investigate the role of geometry on plasmonic hot carrier collection.

  7. An Estimation Method for number of carrier frequency

    Directory of Open Access Journals (Sweden)

    Xiong Peng

    2015-01-01

    Full Text Available This paper proposes a method that utilizes AR model power spectrum estimation based on Burg algorithm to estimate the number of carrier frequency in single pulse. In the modern electronic and information warfare, the pulse signal form of radar is complex and changeable, among which single pulse with multi-carrier frequencies is the most typical one, such as the frequency shift keying (FSK signal, the frequency shift keying with linear frequency (FSK-LFM hybrid modulation signal and the frequency shift keying with bi-phase shift keying (FSK-BPSK hybrid modulation signal. In view of this kind of single pulse which has multi-carrier frequencies, this paper adopts a method which transforms the complex signal into AR model, then takes power spectrum based on Burg algorithm to show the effect. Experimental results show that the estimation method still can determine the number of carrier frequencies accurately even when the signal noise ratio (SNR is very low.

  8. Cell carriers for oncolytic viruses: current challenges and future directions.

    Science.gov (United States)

    Roy, Dominic G; Bell, John C

    2013-01-01

    The optimal route for clinical delivery of oncolytic viruses is thought to be systemic intravenous injection; however, the immune system is armed with several highly efficient mechanisms to remove pathogens from the circulatory system. To overcome the challenges faced in trying to delivery oncolytic viruses specifically to tumors via the bloodstream, carrier cells have been investigated to determine their suitability as delivery vehicles for systemic administration of oncolytic viruses. Cell carriers protect viruses from neutralization, one of the most limiting aspects of oncolytic virus interaction with the immune system. Cell carriers can also possess inherent tumor tropism, thus directing the delivery of the virus more specifically to a tumor. With preclinical studies already demonstrating the success and feasibility of this approach with multiple oncolytic viruses, clinical evaluation of cell-mediated delivery of viruses is on the horizon. Meanwhile, ongoing preclinical studies are aimed at identifying new cellular vehicles for oncolytic viruses and improving current promising cell carrier platforms. PMID:27512657

  9. Carrier screening in preconception consultation in primary care.

    Science.gov (United States)

    Metcalfe, Sylvia A

    2012-07-01

    Discussing carrier screening during preconception consultation in primary care has a number of advantages in terms of promoting autonomy and enabling the greatest range of reproductive choices. For those with a family history of an inherited condition, this ought to be a routine discussion; however, this can be expanded to include the wider population, especially for those conditions for which carrier frequencies are considered relatively common. There is published literature from around the world regarding experiences with carrier screening in primary care for cystic fibrosis, haemoglobinopathies, fragile X syndrome, Tay-Sachs disease and spinal muscular atrophy, although many of these have tended to focus on consultations during rather than before pregnancy. Overall, these studies reveal that population carrier screening is well received by the participants with apparent minimal psychosocial harms; however, challenges exist in terms of approaches to ensure couples receive adequate information to make personally relevant decisions and for ongoing health professional engagement. PMID:22183783

  10. Consideration of the gestational carrier: a committee opinion.

    Science.gov (United States)

    2013-06-01

    Gestational carriers have a right to be fully informed of the risks of the surrogacy process and of pregnancy, should receive psychological evaluation and counseling, and should have independent legal counsel. PMID:23541404

  11. Study on Papain Immobilization on a Macroporous Polymer Carrier

    OpenAIRE

    Ding, Liang; YAO, Zihua; Li, Tong

    2003-01-01

    Macroporous resin microbeads of methyl methacrylate-divinyl benzene copolymer were synthesized by radical suspension polymerization of acrolein with divinylbenzene in the presence of a pore-creating agent, petroleum ether. The microbeads had a large specific surface area and large pores covered the entire surface of the resin. This macroporous polymer carrier was aminated by hydrazine hydrate that produced a large number of amino groups on the carrier. Papain was immobilized on the ...

  12. The plant mitochondrial carrier family: functional and evolutionary aspects

    OpenAIRE

    Ilka eHaferkamp; Stephan eSchmitz-Esser

    2012-01-01

    Mitochondria play a key role in respiration and energy production and are involved in multiple eukaryotic but also in several plant specific metabolic pathways. Solute carriers in the inner mitochondrial membrane connect the internal metabolism with that of the surrounding cell. Because of their common basic structure, these transport proteins affiliate to the mitochondrial carrier family (MCF). Generally, MCF proteins consist of six membrane-spanning helices, exhibit typical conserved domain...

  13. Decision feedback loop for tracking a polyphase modulated carrier

    Science.gov (United States)

    Simon, M. K. (Inventor)

    1974-01-01

    A multiple phase modulated carrier tracking loop for use in a frequency shift keying system is described in which carrier tracking efficiency is improved by making use of the decision signals made on the data phase transmitted in each T-second interval. The decision signal is used to produce a pair of decision-feedback quadrature signals for enhancing the loop's performance in developing a loop phase error signal.

  14. Subtle changes among presymptomatic carriers of the Huntington's disease gene

    OpenAIRE

    Kirkwood, S.; Siemers, E; Hodes, M.; Conneally, P; Christian, J.; Foroud, T

    2000-01-01

    OBJECTIVES—To compare the neurological and psychometric characteristics of presymptomatic gene carriers and non-gene carriers who are at risk for developing Huntington's disease so as to characterise early signs of disease and to identify markers of neurological function that could be used to assess the impact of experimental therapies on the progression of disease, even among those who are clinically presymptomatic.
METHODS—A sample of people at risk for Huntington's dis...

  15. Review of Magnetic Carrier Technologies for Metal Ion Removal

    OpenAIRE

    Broomberg, J.; Gélinas, S.; Finch, James A.; Xu, Z.

    1999-01-01

    Magnetic carriers are magnetic materials designed to bind selectively on some non -magnetic materials to make them separable using magnetic separation. It allows magnetic separation, a fast, efficient, high capacity and well-developed industrial technology, to be applied to the separation of materials that are otherwise non-magnetic. One application is in metal ion recovery from dilute effluents. Magnetic carrier technologies offer some advantages over other more conventional metal ion separa...

  16. Carrier peptide-mediated transepithelial permeation of biopharmaceuticals

    DEFF Research Database (Denmark)

    Kristensen, Mie; Nielsen, Hanne Mørck

    2015-01-01

    -penetrating peptides (CPPs). Two approaches for the carrier peptide-mediated transepithelial permeation of biopharmaceuticals are generally explored: Co-administration1 or covalent conjugation2. Co-administration is often the method of choice due to e.g. ease in sample preparation and flexibility in adjustment of the......-34)) and the widely studied CPP penetratin were employed as therapeutic cargo and carrier peptide, respectively....

  17. Carrier Modulation Layer-Enhanced Organic Light-Emitting Diodes

    OpenAIRE

    Jwo-Huei Jou; Sudhir Kumar; Meenu Singh; Yi-Hong Chen; Chung-Chia Chen; Meng-Ting Lee

    2015-01-01

    Organic light-emitting diode (OLED)-based display products have already emerged in the market and their efficiencies and lifetimes are sound at the comparatively low required luminance. To realize OLED for lighting application sooner, higher light quality and better power efficiency at elevated luminance are still demanded. This review reveals the advantages of incorporating a nano-scale carrier modulation layer (CML), also known as a spacer, carrier-regulating layer, or interlayer, among oth...

  18. Effects of copper on the carrier dynamics in black silicon

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Persheyev, S.;

    2011-01-01

    Black silicon is produced by laser annealing of a-Si:H films. We show that by adding a thin Cu film on top of the a-Si:H film before laser annealing, the carrier lifetime can be significantly reduced.......Black silicon is produced by laser annealing of a-Si:H films. We show that by adding a thin Cu film on top of the a-Si:H film before laser annealing, the carrier lifetime can be significantly reduced....

  19. Hot-carrier reliability in OPTVLD-LDMOS

    Institute of Scientific and Technical Information of China (English)

    Cheng Junji; Chen Xingbi

    2012-01-01

    An improved structure that eliminates hot-carrier effects (HCE) in optimum variation lateral doping (OPTVLD) LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.

  20. Adaptive GNSS Carrier Tracking under Ionospheric Scintillation: Estimation vs Mitigation

    OpenAIRE

    Vilà-Valls, Jordi; Closas, Pau; Fernández-Prades, Carles; López-Salcedo, José A.; Seco-Granados, Gonzalo

    2015-01-01

    This letter deals with carrier synchronization in Global Navigation Satellite Systems. The main goals are to design robust methods and to obtain accurate phase estimates under ionospheric scintillation conditions, being of paramount importance in safety critical applications and advanced receivers. Within this framework, the estimation versus mitigation paradigm is discussed together with a new adaptive Kalman filter-based carrier phase synchronization architecture that copes with signals cor...