WorldWideScience

Sample records for carrier density

  1. Carrier Density and Plasma Frequency of Aluminum Nanofilms

    Institute of Scientific and Technical Information of China (English)

    Hao DU; Jun GONG; Chao SUN; Rongfang HUANG; Lishi WEN; W.Y.Cheung; S.P.Wong

    2003-01-01

    In this work, the prerequisite and mode of electromagnetic response of Al nanofilms to electromagnetic wave field was suggested.Reflectance, transmittance in infrared region and carrier density of the films was measured. With the carrier density of the films, the dependence of their plasma frequencies on the film thickness was obtained. On the other hand, the dependence of absorptance on the frequency of electromagnetic wave field was set up by using the measured reflectance and transmittance,which provided plasma frequency-film thickness relation as well. Similarity of both plasma frequency-film thickness relations proved plasma resonance as a mode of electromagnetic response in Al nanofilms.

  2. Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy

    CERN Document Server

    Yin, Yan; Wang, Li; Jin, Kuijuan; Wang, Wenzhong

    2016-01-01

    Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of ...

  3. Manipulation of Carrier Density near Ferroelectric/Semiconductor Interfaces

    Science.gov (United States)

    Kesim, Mehmet; Misirlioglu, I. Burc; Mantese, Joseph; Alpay, S. Pamir

    Switchable polarization of a ferroelectric (FE) opens up the opportunity to control the charge density and transport characteristics at the FE/metal and FE/semiconductor (SC) heterointerfaces. Carrier manipulation near such regions can be used in high density non-volatile memories, switchable diodes, and photovoltaic devices. FEs can be utilized as gate oxides in a metal oxide field-effect transistor configuration for non-volatile memory applications with lower gate voltages compared to that of transistors with linear dielectrics. The channel conductance can be modulated reversibly, for instance, by tuning the magnitude and spatial distribution of polarization in the FE. In this study, we show that FE heterostructures can be used to manipulate the conductivity of a FE/SC interface. We employ a non-linear thermodynamic model based on Landau-Ginzburg-Devonshire (LGD) theory to obtain the equilibrium polarization of heterostructures. The carriers along the heterostructures are mapped through coupling the LGD equation with the Maxwell equations and Fermi - Dirac distribution of charged carriers/ionized dopants in the FE and SC. We consider various configurations including FE/SC/paraelectric and FE/SC/FE stacks to investigate the carrier distribution and band bending near such interfaces. The resulting properties are explained through the phase transition characteristics and domain structure of the stacks.

  4. Carrier density driven lasing dynamics in ZnO nanowires

    CERN Document Server

    Wille, Marcel; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-01-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature dependent emission onset-time ($t_{\\text{on}}$) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolu...

  5. Charge carrier density in Li-intercalated graphene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-05-01

    The electronic structures of bulk C 6Li, Li-intercalated free-standing bilayer graphene, and Li-intercalated bilayer and trilayer graphene on SiC(0 0 0 1) are studied using density functional theory. Our estimate of Young\\'s modulus suggests that Li-intercalation increases the intrinsic stiffness. For decreasing Li-C interaction, the Dirac point shifts to the Fermi level and the associated band splitting vanishes. For Li-intercalated bilayer graphene on SiC(0 0 0 1) the splitting at the Dirac point is tiny. It is also very small at the two Dirac points of Li-intercalated trilayer graphene on SiC(0 0 0 1). For all the systems under study, a large enhancement of the charge carrier density is achieved by Li intercalation. © 2012 Elsevier B.V. All rights reserved.

  6. Ferroelectrically driven spatial carrier density modulation in graphene.

    Science.gov (United States)

    Baeumer, Christoph; Saldana-Greco, Diomedes; Martirez, John Mark P; Rappe, Andrew M; Shim, Moonsub; Martin, Lane W

    2015-01-22

    The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.

  7. Carrier density driven lasing dynamics in ZnO nanowires.

    Science.gov (United States)

    Wille, Marcel; Sturm, Chris; Michalsky, Tom; Röder, Robert; Ronning, Carsten; Schmidt-Grund, Rüdiger; Grundmann, Marius

    2016-06-01

    We report on the temporal lasing dynamics of high quality ZnO nanowires using the time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature-dependent emission onset-time ([Formula: see text]) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

  8. γ radiation caused graphene defects and increased carrier density

    Institute of Scientific and Technical Information of China (English)

    Han Mai-xing; Ji Zhuo-Yu; Shang Li-Wei; Chen Ying-Ping; Wang Hong; Liu Xin; Li Dong-Mei; Liu Ming

    2011-01-01

    We report on a micro-Raman investigation of inducing defects in mono-layer,bi-layer and tri-layer graphene by γ ray radiation.It is found that the radiation exposure results in two-dimensional(2D)and G band position evolution with the layer number increasing and D and D' bands rising,suggesting the presence of defects and related crystal lattice deformation in graphene.Bi-layer graphene is more stable than mono-and tri-layer graphene,indicating that the former is a better candidate in the application of radiation environments.Also,the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.

  9. Lithium-ion-based solid electrolyte tuning of the carrier density in graphene

    OpenAIRE

    Jialin Zhao; Meng Wang; Hui Li; Xuefu Zhang; Lixing You; Shan Qiao; Bo Gao; Xiaoming Xie; Mianheng Jiang

    2016-01-01

    We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 1014 cm−2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, w...

  10. Lithium-ion-based solid electrolyte tuning of the carrier density in graphene

    Science.gov (United States)

    Zhao, Jialin; Wang, Meng; Li, Hui; Zhang, Xuefu; You, Lixing; Qiao, Shan; Gao, Bo; Xie, Xiaoming; Jiang, Mianheng

    2016-10-01

    We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 1014 cm‑2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes.

  11. Lithium-ion-based solid electrolyte tuning of the carrier density in graphene

    Science.gov (United States)

    Zhao, Jialin; Wang, Meng; Li, Hui; Zhang, Xuefu; You, Lixing; Qiao, Shan; Gao, Bo; Xie, Xiaoming; Jiang, Mianheng

    2016-01-01

    We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 1014 cm−2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes. PMID:27698413

  12. Investigating thermal donors in n-type Cz silicon with carrier density imaging

    Directory of Open Access Journals (Sweden)

    Yu Hu

    2012-09-01

    Full Text Available A new method to map the thermal donor concentration in silicon wafers using carrier density imaging is presented. A map of the thermal donor concentration is extracted with high resolution from free carrier density images of a silicon wafer before and after growth of thermal donors. For comparison, free carrier density mapping is also performed using the resistivity method together with linear interpolation. Both methods reveal the same distribution of thermal donors indicating that the carrier density imaging technique can be used to map thermal donor concentration. The interstitial oxygen concentration can also be extracted using the new method in combination with Wijaranakula's model. As part of this work, the lifetime at medium injection level is correlated to the concentration of thermal donors in the as-grown silicon wafer. The recombination rate is found to depend strongly on the thermal donor concentration except in the P-band region.

  13. Demonstration of the difference Casimir force for samples with different charge carrier densities

    CERN Document Server

    Chen, F; Mohideen, U; Mostepanenko, V M

    2006-01-01

    A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good agreement is found. Our experiment demonstrates that by changing the carrier density of the semiconductor plate by several orders of magnitude it is possible to modify the Casimir interaction. This result may find applications in nanotechnology.

  14. Influence of carrier density on the electronic cooling channels of bilayer graphene

    NARCIS (Netherlands)

    Limmer, T.; Houtepen, A.J.; Niggebaum, A.; Tautz, R.; Da Como, E.

    2011-01-01

    We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25–1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons an

  15. Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene)

    OpenAIRE

    Tanase, C; Blom, PWM; De Leeuw, DM; de Meijer, EJ

    2004-01-01

    The hole transport in various poly(p-phenylene vinylene) (PPV) derivatives has been investigated in field-effect transistors (FETs) and light-emitting diodes (LEDs) as a function of temperature and applied bias. The discrepancy between the experimental hole mobilities extracted from FETs and LEDs based on a single disordered polymeric semiconductor originates from the strong dependence of the hole mobility on the charge carrier density. The microscopic charge transport parameters are directly...

  16. Determination of charge carrier mobility in doped low density polyethylene using DC transients

    DEFF Research Database (Denmark)

    Khalil, M.Salah; Henk, Peter O; Henriksen, Mogens

    1989-01-01

    Charge carrier mobility was determined for plain and doped low-density polyethylene (LDPE) using DC transient currents. Barium titanate was used as a strongly polar dopant and titanium dioxide as a semiconductor dopant. The values of the mobility obtained were on the order of 10-10 cm2 v-1 s-1...... by a factor of five. Charge trapping and space charge formation were modified by the introduction of titanium dioxide...

  17. High-quality epitaxial graphene devices with low carrier density for resistance metrology

    Science.gov (United States)

    Yang, Yanfei; Huang, Lung-I.; Newell, David; Real, Mariano; Elmquist, Randolph

    2014-03-01

    Epitaxially grown graphene on silicon carbide (SiC) is a promising material for both quantum resistance metrology and wafer-scale electronics. However, monolayers are typically found to be heavily n-doped due to the charge exchange between the graphene and the non-conducting buffer layer beneath that is covalently bonded to the SiC substrate. Carrier densities are usually in the range of 1012 ~ 1013 cm-2, where heavy doping shifts the quantized Hall resistance plateau to high magnetic field values. Various gating methods have been developed to reduce the carrier density, but require lithography processes that increase the probability of contamination that degrades the performance of the devices. Recently, we fabricated high-quality Hall devices on diced semi-insulating SiC wafers, obtaining carrier densities in the range of 1010 ~ 1011 cm-2 and mobility above 104 cm2V-1s-1 without gating. Graphene is grown on the Si face of SiC(0001) substrates and devices are fabricated using a metal layer subtractive process without organic chemical contamination of the graphene. We measure well-developed quantum Hall plateaus with filling factor ν = 2, the fingerprint for monolayer graphene, at magnetic fields below 2 T at liquid helium temperature. A variety of quantum phenomena are observed in these clean, high quality graphene devices. NIST and Georgetown University.

  18. Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M2S + (0.1 Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga2S3 + 0.9 GeS2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M2S + (0.1Ga2S3 + 0.9 GeS2) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na2S + B2S3 (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

  19. Nanoscale Tunable Strong Carrier Density Modulation of 2D Materials for Metamaterials and Other Tunable Optoelectronics

    Science.gov (United States)

    Peng, Cheng; Efetov, Dmitri; Shiue, Ren-Jye; Nanot, Sebastien; Hempel, Marek; Kong, Jing; Koppens, Frank; Englund, Dirk

    Strong spatial tunability of the charge carrier density at nanoscale is essential to many 2D-material-based electronic and optoelectronic applications. As an example, plasmonic metamaterials with nanoscale dimensions would make graphene plasmonics at visible and near-infrared wavelengths possible. However, existing gating techniques based on conventional dielectric gating geometries limit the spatial resolution and achievable carrier concentration, strongly restricting the available wavelength, geometry, and quality of the devices. Here, we present a novel spatially selective electrolyte gating approach that allows for in-plane spatial Fermi energy modulation of 2D materials of more than 1 eV (carrier density of n = 1014 cm-2) across a length of 2 nm. We present electrostatic simulations as well as electronic transport, photocurrent, cyclic voltammetry and optical spectroscopy measurements to characterize the performance of the gating technique applied to graphene devices. The high spatial resolution, high doping capacity, full tunability and self-aligned device geometry of the presented technique opens a new venue for nanoscale metamaterial engineering of 2D materials for complete optical absorption, nonlinear optics and sensing, among other applications.

  20. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

    KAUST Repository

    Shi, Dong

    2015-01-29

    The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3(MA = CH3NH3 +; X = Br- or I- ) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics.We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

  1. Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

    KAUST Repository

    Ozdogan, K.

    2012-03-08

    We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.

  2. Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities

    Science.gov (United States)

    Efetov, Dmitri K.; Kim, Philip

    2010-12-01

    We report on the temperature dependent electron transport in graphene at different carrier densities n. Employing an electrolytic gate, we demonstrate that n can be adjusted up to 4×1014cm-2 for both electrons and holes. The measured sample resistivity ρ increases linearly with temperature T in the high temperature limit, indicating that a quasiclassical phonon distribution is responsible for the electron scattering. As T decreases, the resistivity decreases more rapidly following ρ(T)˜T4. This low temperature behavior can be described by a Bloch-Grüneisen model taking into account the quantum distribution of the two-dimensional acoustic phonons in graphene. We map out the density dependence of the characteristic temperature ΘBG defining the crossover between the two distinct regimes, and show that, for all n, ρ(T) scales as a universal function of the normalized temperature T/ΘBG.

  3. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Science.gov (United States)

    Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.; Kuciauskas, Darius; Metzger, Wyatt K.

    2016-11-01

    CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  4. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

    Directory of Open Access Journals (Sweden)

    James M. Burst

    2016-11-01

    Full Text Available CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm−3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

  5. Carrier-Density-Dependent Electron Spin Relaxation in GaAs/AlGaAs Multi Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    SHOU Qian; WU Yu; LIU Lu-Ning; WEN Jin-Hui; LAI Tian-Shu; LIN Wei-Zhu

    2005-01-01

    @@ The carrier-density-dependent electron spin relaxation processes in GaAs/AlGaAs multi quantum wells are investigated by a femtosecond pump probe experiment. The spin relaxation time presents two distinguishable trends with the increasing excitation density. It increases from 60ps to 70ps with carrier densities from 1 × 1017 cm-3to 5 × 1017 cm-3 and gradually saturates up to ~80ps at 4 × 1018 cm-3. The experimental results are attributed to the combined competition between collision intensification and scattering potential screening and provide a good experimental confirmation for the theoretical D'yakonov-Perel' mechanism descriptions.

  6. First measurements of charge carrier density and mobility of in-situ enriched 28Si

    Science.gov (United States)

    Ramanayaka, A. N.; Dwyer, K. J.; Kim, Hyun-Soo; Stewart, M. D., Jr.; Pomeroy, J. M.

    Magnetotransport in top gated Hall bar devices is investigated to characterize the electrical properties of in-situ enriched 28Si. Isotopically enriched 28Si is an ideal candidate for quantum information processing devices as the elimination of unpaired nuclear spins improves the fidelity of the quantum information. Using mass filtered ion beam deposition we, in-situ, enrich and deposit epitaxial 28Si, achieving several orders of magnitude better enrichment compared to other techniques. In order to explore the electrical properties and optimize the growth conditions of in-situ enriched 28Si we perform magnetotransport measurements on top gated Hall bar devices at temperatures ranging from 300 K to cryogenic temperatures and at moderate magnetic fields. Here, we report on the charge carrier density and mobility extracted from such experiments, and will be compared among different growth conditions of in-situ enriched 28Si.

  7. Measuring the mobility of single crystalline wires and its dependence on temperature and carrier density

    Energy Technology Data Exchange (ETDEWEB)

    Amorim, Cleber A; Berengue, Olivia M; Kamimura, Hanay; Chiquito, Adenilson J [NanO LaB-Departamento de Fisica, Universidade Federal de Sao Carlos, CEP 13565-905, CP 676, Sao Carlos, Sao Paulo (Brazil); Leite, Edson R, E-mail: amorim@df.ufscar.br [Laboratorio Interdisciplinar de EletroquImica e Ceramicas, Departamento de Quimica, Universidade Federal de Sao Carlos, CEP 13565-905, CP 676, Sao Carlos, Sao Paulo (Brazil)

    2011-05-25

    Kinetic transport parameters are fundamental for the development of electronic nanodevices. We present new results for the temperature dependence of mobility and carrier density in single crystalline In{sub 2}O{sub 3} samples and the method of extraction of these parameters which can be extended to similar systems. The data were obtained using a conventional Hall geometry and were quantitatively described by the semiconductor transport theory characterizing the electron transport as being controlled by the variable range hopping mechanism. A comprehensive analysis is provided showing the contribution of ionized impurities (low temperatures) and acoustic phonon (high temperatures) scattering mechanisms to the electron mobility. The approach presented here avoids common errors in kinetic parameter extraction from field effect data, serving as a versatile platform for direct investigation of any nanoscale electronic materials.

  8. Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

    Science.gov (United States)

    Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.

    2001-01-01

    Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

  9. Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure.

    Science.gov (United States)

    Higgins, L J; Karanikolas, V D; Marocico, C A; Bell, A P; Sadler, T C; Parbrook, P J; Bradley, A L

    2015-01-26

    An array of Ag nanoboxes fabricated by helium-ion lithography is used to demonstrate plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure. The nonradiative energy transfer, from an InGaN/GaN quantum well to CdSe/ZnS nanocrystal quantum dots embedded in an ~80 nm layer of PMMA, is investigated over a range of carrier densities within the quantum well. The plasmon-enhanced energy transfer efficiency is found to be independent of the carrier density, with an efficiency of 25% reported. The dependence on carrier density is observed to be the same as for conventional nonradiative energy transfer. The plasmon-coupled energy transfer enhances the QD emission by 58%. However, due to photoluminescence quenching effects an overall increase in the QD emission of 16% is observed.

  10. Change of carrier density at the pseudogap critical point of a cuprate superconductor.

    Science.gov (United States)

    Badoux, S; Tabis, W; Laliberté, F; Grissonnanche, G; Vignolle, B; Vignolles, D; Béard, J; Bonn, D A; Hardy, W N; Liang, R; Doiron-Leyraud, N; Taillefer, Louis; Proust, Cyril

    2016-03-10

    The pseudogap is a partial gap in the electronic density of states that opens in the normal (non-superconducting) state of cuprate superconductors and whose origin is a long-standing puzzle. Its connection to the Mott insulator phase at low doping (hole concentration, p) remains ambiguous and its relation to the charge order that reconstructs the Fermi surface at intermediate doping is still unclear. Here we use measurements of the Hall coefficient in magnetic fields up to 88 tesla to show that Fermi-surface reconstruction by charge order in the cuprate YBa2Cu3Oy ends sharply at a critical doping p = 0.16 that is distinctly lower than the pseudogap critical point p* = 0.19 (ref. 11). This shows that the pseudogap and charge order are separate phenomena. We find that the change in carrier density n from n = 1 + p in the conventional metal at high doping (ref. 12) to n = p at low doping (ref. 13) starts at the pseudogap critical point. This shows that the pseudogap and the antiferromagnetic Mott insulator are linked.

  11. Dynamical co-existence of excitons and free carriers in perovskite probed by density-resolved fluorescent spectroscopic method

    CERN Document Server

    Wang, Wei; Wang, Xiangyuan; Lv, Yanping; Wang, Shufeng; Wang, Kai; Shi, Yantao; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang

    2016-01-01

    Using transient fluorescent spectra at time-zero, we develop a density-resolved fluorescent spectroscopic method for investigating photoproducts in CH3NH3PbI3 perovskite and related photophysics. The density dependent dynamical co-existence of excitons and free carriers over a wide density range is experimentally observed for the first time. The exciton binding energy (EB) and the effective mass of electron-hole pair can be estimated based on such co-existence. No ionic polarization is found contributing to photophysical behavior. It also solves the conflict between the large experimentally measured EB and the small predicted values. The spectroscopic method also helps to detect the true free carrier density under continuous illumination without the interference of ionic conductivity. Our methods and results profoundly enrich the study and understanding of the photophysics in perovskite materials for photovoltaic applications.

  12. Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction

    Science.gov (United States)

    Li, J.; Tan, L. Z.; Zou, K.; Stabile, A. A.; Seiwell, D. J.; Watanabe, K.; Taniguchi, T.; Louie, Steven G.; Zhu, J.

    2016-10-01

    In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi-liquid parameters, such as the effective mass of carriers. We combine experiment and theory to study the effective masses of electrons and holes me* and mh* in bilayer graphene in the low carrier density regime on the order of 1 ×1011c m-2 . Measurements use temperature-dependent low-field Shubnikov-de Haas oscillations observed in high-mobility hexagonal boron nitride supported samples. We find that while me* follows a tight-binding description in the whole density range, mh* starts to drop rapidly below the tight-binding description at a carrier density of n =6 ×1011c m-2 and exhibits a strong suppression of 30% when n reaches 2 ×1011c m-2 . Contributions from the electron-electron interaction alone, evaluated using several different approximations, cannot explain the experimental trend. Instead, the effect of the potential fluctuation and the resulting electron-hole puddles play a crucial role. Calculations including both the electron-electron interaction and disorder effects explain the experimental data qualitatively and quantitatively. This Rapid Communication reveals an unusual disorder effect unique to two-dimensional semimetallic systems.

  13. Thickness dependent charge transfer states and dark carriers density in vacuum deposited small molecule organic photocell

    Science.gov (United States)

    Shekhar, Himanshu; Tzabari, Lior; Solomeshch, Olga; Tessler, Nir

    2016-10-01

    We have investigated the influence of the active layer thickness on the balance of the internal mechanisms affecting the efficiency of copper phthalocyanine - fullerene (C60) based vacuum deposited bulk heterojunction organic photocell. We fabricated a range of devices for which we varied the thickness of the active layer from 40 to 120 nm and assessed their performance using optical and electrical characterization techniques. As reported previously for phthalocyanine:C60, the performance of the device is highly dependent on the active layer thickness and of all the thicknesses we tried, the 40 nm thin active layer device showed the best solar cell characteristic parameters. Using the transfer matrix based optical model, which includes interference effects, we calculated the optical power absorbed in the active layers for the entire absorption band, and we found that this cannot explain the trend with thickness. Measurement of the cell quantum efficiency as a function of light intensity showed that the relative weight of the device internal processes changes when going from 40 nm to 120 nm thick active layer. Electrical modeling of the device, which takes different internal processes into account, allowed to quantify the changes in the processes affecting the generation - recombination balance. Sub gap external quantum efficiency and morphological analysis of the surface of the films agree with the model's result. We found that as the thickness grows the density of charge transfer states and of dark carriers goes up and the uniformity in the vertical direction is reduced.

  14. Superconductivity in transparent zinc-doped In2O3 films having low carrier density

    Directory of Open Access Journals (Sweden)

    Kazumasa Makise, Nobuhito Kokubo, Satoshi Takada, Takashi Yamaguti, Syunsuke Ogura, Kazumasa Yamada, Bunjyu Shinozaki, Koki Yano, Kazuyoshi Inoue and Hiroaki Nakamura

    2008-01-01

    Full Text Available Thin polycrystalline zinc-doped indium oxide (In2O3–ZnO films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0≤x ≤0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5≤T ≤300 K, H≤6 Tfor 350 nm films annealed in air. Films with 0≤x≤0.03 show the superconducting resistive transition. The transition temperature Tc is below 3.3 K and the carrier density n is about 1025–1026 m−3. The annealed In2O3–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field Hc2 (T for the film with x = 0.01. From the slope of dHc2 /dT, we obtain the coherence length ξ (0 ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

  15. Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors

    Institute of Scientific and Technical Information of China (English)

    Ken K. Chin

    2011-01-01

    We present a generic approximate graphical method for determining the equilibrium Fermi level and majority carrier density of a semiconductor with multiple donors and multiple acceptors compensating each other Simple and easy-to-follow procedures of the graphical method are described. By graphically plotting two wrapping step functions facing each other, one for the positive hole-ionized donor and one for the negative electron-ionized acceptor, we have the crossing point that renders the Fermi level and majority carrier density. Using the graphica method, new equations are derived, such as the carrier compensation proportional to NA/ND, not the widely quoted NA - ND. Visual insight is offered to view not only the result of graphic determination of Fermi level and majoriy carrier density but also the dominant and critical pair of donors and acceptors in compensation. The graphica method presented in this work will help to guide the design, adjustment, and improvement of the multiply doped semiconductors. Comparison of this approximate graphical method with previous work on compensation, and with some experimental results, is made. Future work in the field is proposed.

  16. Charge carrier Density Imaging / IR lifetime mapping of Si wafers by Lock-In Thermography

    NARCIS (Netherlands)

    Van der Tempel, L.

    2012-01-01

    ABSTRACT Minority carrier lifetime imaging by lock-in thermography of passivated silicon wafers for photovoltaic cells has been developed for the public Pieken in de Delta project geZONd. CONCLUSIONS Minority carrier lifetime imaging by lock-in thermography of passivatedsilicon wafers is released t

  17. A code-aided carrier synchronization algorithm based on improved nonbinary low-density parity-check codes

    Science.gov (United States)

    Bai, Cheng-lin; Cheng, Zhi-hui

    2016-09-01

    In order to further improve the carrier synchronization estimation range and accuracy at low signal-to-noise ratio ( SNR), this paper proposes a code-aided carrier synchronization algorithm based on improved nonbinary low-density parity-check (NB-LDPC) codes to study the polarization-division-multiplexing coherent optical orthogonal frequency division multiplexing (PDM-CO-OFDM) system performance in the cases of quadrature phase shift keying (QPSK) and 16 quadrature amplitude modulation (16-QAM) modes. The simulation results indicate that this algorithm can enlarge frequency and phase offset estimation ranges and enhance accuracy of the system greatly, and the bit error rate ( BER) performance of the system is improved effectively compared with that of the system employing traditional NB-LDPC code-aided carrier synchronization algorithm.

  18. Influence of optical interference and carrier lifetime on the short circuit current density of organic bulk heterojunction solar cells

    Institute of Scientific and Technical Information of China (English)

    You Hai-Long; Zhang Chun-Fu

    2009-01-01

    Based on simple analytical equations, short circuit current density (Jsc) of the organic bulk heterojunction solar cells has been calculated. It is found that the optical interference effect plays a very important role in the determination of JSC;and obvious oscillatory behaviour of Jsc was observed as a function of thickness. At the same time, the influence of JSC only increases the carrier lifetime on JSC also cannot be neglected. When the carrier lifetime is relatively short, at the initial stage and then decreases rapidly with the increase of active layer thickness. However, for a relatively long carrier lifetime, the exciton dissociation probability must be considered, and Jsc behaves wave-like with the increase of active layer thickness. The validity of this model is confirmed by the experimental results.

  19. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    Science.gov (United States)

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  20. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-08-01

    Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  1. Power density, field intensity, and carrier frequency determinants of RF-energy-induced calcium-ion efflux from brain tissue

    Energy Technology Data Exchange (ETDEWEB)

    Joines, W.T.; Blackman, C.F.

    1980-01-01

    To explain a carrier frequency dependence reported for radiofrequency (RF)-induced calcium-ion efflux from brain tissue, a chick-brain hemisphere bathed in buffer solution is modeled as a sphere within the uniform field of the incident electromagnetic wave. Calculations on a spherical model show that the average electric-field intensity within the sample remains the same at different carrier frequencies if the incident power density (Pi) is adjusted by an amount that compensates for the change in complex permittivity (epsilon *r) and the change of wavelength, as a function of carrier frequency. The resulting formula for transforming Pi is seen to follow the pattern of both positive and negative demonstrations of calcium-ion efflux that have been observed at carrier frequencies of 50, 147, and 450 MHz. Indeed, all results obtained at these three frequencies, when related by Pi's that produce the same average electric-field intensity within the sample, are seen to be in agreement; no prediction is contradicted by an experiment.

  2. Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

    NARCIS (Netherlands)

    Asadi, Kamal; Kronemeijer, Auke J.; Cramer, Tobias; Koster, L. Jan Anton; Blom, Paul W. M.; de Leeuw, Dago M.

    2013-01-01

    The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform descript

  3. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  4. Signal with Flat Phase Noise Using a Carrier and the Power Spectral Density of White Noise for Phase Noise Standards

    Science.gov (United States)

    Watabe, Ken-ichi; Yanagimachi, Shinya; Ikegami, Takeshi; Iida, Hitoshi; Shimada, Yozo

    2012-01-01

    We have realized a phase noise standard of a signal with a -100 dBc/Hz flat phase noise at 10 MHz for Fourier frequencies of 1 Hz to 100 kHz, which ensures traceability to the International System of Units (SI). The flat phase noise signal is produced using a carrier combined with white noise. To ensure traceability, both the flat phase noise signal power and the power spectral density of white noise are determined with a calibrated power meter and the noise standard, respectively. The flatness of the phase noise standard is within ±0.7 dB.

  5. Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface

    Science.gov (United States)

    Kumar, Neeraj; Kitoh, Ai; Inoue, Isao H.

    2016-05-01

    Electrostatic carrier accumulation on an insulating (100) surface of SrTiO3 by fabricating a field effect transistor with Parylene-C (6 nm)/HfO2 (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density is about 10 times as large as ( is the sheet capacitance of the gate insulator, VG is the gate voltage, and e is the elementary charge). The channel is so clean to exhibit small subthreshod swing of 170 mV/decade and large mobility of 11 cm2/Vs for of 1 × 1014 cm‑2 at room temperature. Since does not depend on either VG nor time duration, beyond is solely ascribed to negative charge compressibility of the carriers, which was in general considered as due to exchange interactions among electrons in the small limit. However, the observed is too large to be naively understood by the framework. Alternative ideas are proposed in this work.

  6. Ionic Wind Phenomenon and Charge Carrier Mobility in Very High Density Argon Corona Discharge Plasma

    Science.gov (United States)

    Nur, M.; Bonifaci, N.; Denat, A.

    2014-04-01

    Wind ions phenomenon has been observed in the high density argon corona discharge plasma. Corona discharge plasma was produced by point to plane electrodes and high voltage DC. Light emission from the recombination process was observed visually. The light emission proper follow the electric field lines that occur between point and plane electrodes. By using saturation current, the mobilities of non-thermal electrons and ions have been obtained in argon gas and liquid with variation of density from 2,5 1021 to 2 1022 cm-3. In the case of ions, we found that the behaviour of the apparent mobility inversely proportional to the density or follow the Langevin variation law. For non-thermal electron, mobility decreases and approximately follows a variation of Langevin type until the density <= 0,25 the critical density of argon.

  7. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  8. Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Baljinder [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Department of Physics, Panjab University, Chandigarh 160014 (India); Singh, Janpreet; Kaur, Jagdish [Department of Physics, Panjab University, Chandigarh 160014 (India); Moudgil, R.K. [Department of Physics, Kurukshetra University, Kurukshetra 136119 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Department of Physics, Panjab University, Chandigarh 160014 (India)

    2016-06-01

    Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

  9. Magnetotransport of the low-carrier density one-dimensional =1/2 antiferromagnet Yb4As3

    Indian Academy of Sciences (India)

    P Gegenwart; H Aoki; T Cichorek; J Custers; M Jaime; A Ochiai; F Steglich

    2002-05-01

    The transport properties of the semimetallic quasi-one-dimensional = 1/2 antiferromagnet Yb4As3 have been studied by performing low-temperature ( ≥ 0.02 K) and high magnetic-field ( ≤ 60 T) measurements of the electrical resistivity ρ(, ). For ≳ 2 K a `heavy-fermion’-like behavior ρ() = 2 with huge and nearly field-independent coefficient ≈ 3 cm/K2 is observed, whereas at lower temperatures ρ() deviates from this behavior and slightly increases to the lowest . In > 0 and ≲ 6 K the resistivity shows an anomalous magnetic-history dependence together with an unusual relaxation behavior. In the isothermal resistivity Shubnikov–de Haas (SdH) oscillations, arising from a low-density system of mobile As-4 holes, with a frequency of 25 T have been recorded. From the - and -dependence of the SdH oscillations an effective carrier mass of (0.275 ± 0.005) 0 and a charge-carrier mean-free path of 215 Å are determined. Furthermore, in ≥ 15 T, the system is near the quantum limit and spin-splitting effects are observed.

  10. Transient saturation absorption spectroscopy excited near the band gap at high excitation carrier density in GaAs

    Institute of Scientific and Technical Information of China (English)

    Wu Song-Jiang; Wang Dan-Ling; Jiang Hong-Bing; Yang Hong; Gong Qi-Huang; Ji Ya-Lin; Lu Wei

    2004-01-01

    @@ Transient saturation absorption spectroscopy in GaAs thin films was investigated using femtosecond pump and supercontinuum probe technique at excitation densities higher than 1× 1019 cm-3. The Coulomb enhancement factor of the electron-hole plasma results in a spectrum hole at the pump wavelength. Two distinct transmission peaks at two sides of the pump wavelength are observed, arising from the bleaching of transitions from the heavy- and light-hole bands to the conduction band. The dynamic process of the transient saturation absorption is fitted using a bi-exponential function. The fast decay process is dominated by the carrier-phonon scattering and the slow process may be attributed to the electron-hole recombination.

  11. Diffuse Surface Scattering and Quantum Size Effects in the Surface Plasmon Resonances of Low Carrier Density Nanocrystals

    CERN Document Server

    Monreal, R Carmina; Apell, S Peter

    2016-01-01

    The detailed understanding of the physical parameters that determine Localized Surface Plasmon Resonances (LSPRs) is essential to develop new applications for plasmonics. A relatively new area of research has been opened by the identification of LSPRs in low carrier density systems obtained by doping semiconductor quantum dots. We investigate theoretically how diffuse surface scattering of electrons in combination with the effect of quantization due to size (QSE) impact the evolution of the LSPRs with the size of these nanosystems. Two key parameters are the length $R_0$ giving the strength of the QSE and the velocity $\\beta_T$ of the electronic excitations entering in the length scale for diffuse surface scattering. While the QSE itself only produces a blueshift in energy of the LSPRs, the diffuse surface scattering mechanism gives to both energy and linewidth an oscillatory-damped behavior as a function of size, with characteristic lengths that depend on material parameters. Thus, the evolution of the LSPRs...

  12. Stability of low-carrier-density topological-insulator Bi{sub 2}Se{sub 3} thin films and effect of capping layers

    Energy Technology Data Exchange (ETDEWEB)

    Salehi, Maryam [Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Brahlek, Matthew; Koirala, Nikesh; Moon, Jisoo; Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States); Wu, Liang; Armitage, N. P. [Department of Physics and Astronomy, The Institute for Quantum Matter, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)

    2015-09-01

    Although over the past number of years there have been many advances in the materials aspects of topological insulators (TIs), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the recent development of low-carrier-density bulk-insulating Bi{sub 2}Se{sub 3} thin films and their sensitivity to air demands reliable capping layers to stabilize their electronic properties. Here, we study the stability of the low-carrier-density Bi{sub 2}Se{sub 3} thin films in air with and without various capping layers using DC and THz probes. Without any capping layers, the carrier density increases by ∼150% over a week and by ∼280% over 9 months. In situ-deposited Se and ex situ-deposited poly(methyl methacrylate) suppress the aging effect to ∼27% and ∼88%, respectively, over 9 months. The combination of effective capping layers and low-carrier-density TI films will open up new opportunities in topological insulators.

  13. Charge carrier density at the (Na/K)TaO{sub 3}/SrTiO{sub 3} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Schwingenschloegl, Udo; Nazir, Safdar [KAUST, PSE Division, Thuwal 23955-6900, Kingdom of Saudi Arabia (Saudi Arabia)

    2012-07-01

    The formation of a quasi two-dimensional electron gas between the band insulators NaTaO{sub 3} and SrTiO{sub 3} as well as KTaO{sub 3} and SrTiO{sub 3} is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO{sub 3}/SrTiO{sub 3}. Both the p-type (NaO){sup -}/(TiO{sub 2}){sup 0} and n-type (TaO{sub 2}){sup +}/(SrO){sup 0} interfaces in NaTaO{sub 3}/SrTiO{sub 3} are found to be metallic with strongly enhanced charge carrier densities as compared to the respective interfaces in KTaO{sub 3}/SrTiO{sub 3}. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2p magnetic moments, located in the metallic region of the p-type interface. The systems under investigation are suitable for disentangling the complex behavior of metallic interface states, since the structural relaxation is small.

  14. Effect of doping- and field-induced charge carrier density on the electron transport in nanocrystalline ZnO.

    Science.gov (United States)

    Hammer, Maria S; Rauh, Daniel; Lorrmann, Volker; Deibel, Carsten; Dyakonov, Vladimir

    2008-12-03

    The charge transport properties of thin films of sol-gel processed undoped and Al-doped zinc oxide nanoparticles with variable doping level between 0.8 and 10 at.% were investigated. The x-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the doping level. The increase of charge carrier density due to extrinsic doping was compared to the accumulation of charge carriers in field effect transistor structures. This allowed us to assess the scattering effects due to extrinsic doping on the electron mobility. The latter decreases from 4.6 × 10(-3) to 4.5 × 10(-4) cm(2) V(-1) s(-1) with increasing doping density. In contrast, the accumulation leads to an increasing mobility up to 1.5 × 10(-2) cm(2) V(-1) s(-1). The potential barrier heights related to grain boundaries between the crystallites were derived from temperature dependent mobility measurements. The extrinsic doping initially leads to a grain boundary barrier height lowering, followed by an increase due to doping-induced structural defects. We conclude that the conductivity of sol-gel processed nanocrystalline ZnO:Al is governed by an interplay of the enhanced charge carrier density and the doping-induced charge carrier scattering effects, achieving a maximum at 0.8 at.% in our case.

  15. Efficacy, but not antibody titer or affinity, of a heroin hapten conjugate vaccine correlates with increasing hapten densities on tetanus toxoid, but not on CRM197 carriers.

    Science.gov (United States)

    Jalah, Rashmi; Torres, Oscar B; Mayorov, Alexander V; Li, Fuying; Antoline, Joshua F G; Jacobson, Arthur E; Rice, Kenner C; Deschamps, Jeffrey R; Beck, Zoltan; Alving, Carl R; Matyas, Gary R

    2015-06-17

    Vaccines against drugs of abuse have induced antibodies in animals that blocked the biological effects of the drug by sequestering the drug in the blood and preventing it from crossing the blood-brain barrier. Drugs of abuse are too small to induce antibodies and, therefore, require conjugation of drug hapten analogs to a carrier protein. The efficacy of these conjugate vaccines depends on several factors including hapten design, coupling strategy, hapten density, carrier protein selection, and vaccine adjuvant. Previously, we have shown that 1 (MorHap), a heroin/morphine hapten, conjugated to tetanus toxoid (TT) and mixed with liposomes containing monophosphoryl lipid A [L(MPLA)] as adjuvant, partially blocked the antinociceptive effects of heroin in mice. Herein, we extended those findings, demonstrating greatly improved vaccine induced antinociceptive effects up to 3% mean maximal potential effect (%MPE). This was obtained by evaluating the effects of vaccine efficacy of hapten 1 vaccine conjugates with varying hapten densities using two different commonly used carrier proteins, TT and cross-reactive material 197 (CRM197). Immunization of mice with these conjugates mixed with L(MPLA) induced very high anti-1 IgG peak levels of 400-1500 μg/mL that bound to both heroin and its metabolites, 6-acetylmorphine and morphine. Except for the lowest hapten density for each carrier, the antibody titers and affinity were independent of hapten density. The TT carrier based vaccines induced long-lived inhibition of heroin-induced antinociception that correlated with increasing hapten density. The best formulation contained TT with the highest hapten density of ≥30 haptens/TT molecule and induced %MPE of approximately 3% after heroin challenge. In contrast, the best formulation using CRM197 was with intermediate 1 densities (10-15 haptens/CRM197 molecule), but the %MPE was approximately 13%. In addition, the chemical synthesis of 1, the optimization of the conjugation

  16. High-density lipoprotein as a potential carrier for delivery of a lipophilic antitumoral drug into hepatoma cells

    Institute of Scientific and Technical Information of China (English)

    Bin Lou; Xue-Ling Liao; Man-Ping Wu; Pei-Fang Cheng; Chun-Yan Yin; Zheng Fei

    2005-01-01

    AIM: To investigate the possibility of recombinant highdensity lipoprotein (rHDL) being a carrier for delivering antitumoral drug to hepatoma cells.METHODS: Recombinant complex of HDL and aclacinomycin(rHDL-ACM) was prepared by cosonication of apoproteins from HDL (Apo HDL) and ACM as well as phosphatidylcholine.Characteristics of the rHDL-ACM were elucidated by electrophoretic mobility, including the size of particles,morphology and entrapment efficiency. Binding activity of rHDL-ACM to human hepatoma cells was determined by competition assay in the presence of excess native HDL. The cytotoxicity of rHDL-ACM was assessed by MTT method.RESULTS: The density range of rHDL-ACM was 1.063-1.210g/mL, and the same as that of native HDL. The purity of all rHDL-ACM preparations was more than 92%.Encapsulated efficiencies of rHDL-ACM were more than90%. rHDL-ACM particles were typical sphere model of lipoproteins and heterogeneous in particle size. The average diameter was 31.26±5.62 nm by measure of 110rHDL-ACM particles in the range of diameter of lipoproteins.rHDL-ACM could bind on SMMC-7721 cells, and such binding could be competed against in the presence of excess native HDL. rHDL-ACM had same binding capacity as native HDL. The cellular uptake of rHDL-ACM by SMMC-7721 hepatoma cells was significantly higher than that of free ACM at the concentration range of 0.5-10 μg/mL(P<0.01). Cytotoxicity of rHDL-ACM to SMMC-7721 cells was significantly higher than that of free ACM at concentration range of less than 5 μg/mL (P<0.01) and IC50 of rHDL-ACM was lower than IC50 of free ACM(1.68 nmol/L vs3 nmol/L). Compared to L02 hepatocytes,a normal liver cell line, the cellular uptake of rHDL-ACM by SMMC-7721 cells was significantly higher (P<0.01) and in a dose-dependent manner at the concentration range of 0.5-10 μg/mL. Cytotoxicity of the rHDL-ACM to SMMC-7721 cells was significantly higher than that to L02 cells at concentration range of 1-7.5 μg/mL (P<0.01). IC50 for

  17. Tuning the carrier density of LaAlO3/SrTiO3 interfaces by capping La1-xSrxMnO3

    Science.gov (United States)

    Shi, Y. J.; Wang, S.; Zhou, Y.; Ding, H. F.; Wu, D.

    2013-02-01

    We present a systematical study on the electronic transport properties of the insulating LaAlO3 (3 unit cells)/SrTiO3 interfaces capping with thin layers of La1-xSrxMnO3, whose formal polarization is continually tuned by Sr doping. When the Sr doping is lower than 2/3, the LaAlO3/SrTiO3 interfaces show metallic behaviors. The carrier mobility is almost independent on the Sr doping for metallic interface, indicating that the capping layer does not change the density of the oxygen vacancies and the interface intermixing. However, the sheet carrier densities monotonically decrease as increasing Sr doping, which is ascribed to the decrease of the La1-xSrxMnO3 formal polarization. These results strongly support the intrinsic mechanism of the polar catastrophe model and provide a new approach to tailor the interface states of complex oxide heterostructures.

  18. Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

    Science.gov (United States)

    Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

    2016-01-01

    A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs. PMID:27756916

  19. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shimosako, N., E-mail: n-shimosako@sophia.jp; Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Ema, K. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

    2015-11-07

    We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

  20. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Wei, S. H.; Ma, J.; Gessert, T. A.; Chin, K. K.

    2011-07-01

    Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae to calculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which VCd, CuCd, and Cui are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poor p-type again, in good agreement with experimental observation of CdTe-based solar cells.

  1. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111

    Directory of Open Access Journals (Sweden)

    J. Hennig

    2015-07-01

    Full Text Available We report on GaN based field-effect transistor (FET structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm. In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  2. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    Energy Technology Data Exchange (ETDEWEB)

    Hennig, J., E-mail: jonas.hennig@ovgu.de; Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A. [Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  3. Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Anbuselvan, N.; Mohankumar, N.; Godwinraj, D.; Sarkar, C. K.

    2014-01-01

    In this paper, we present a physics-based model for two-dimensional electron gas (2DEG) sheet carrier density ns and various microwave characteristics such as transconductance, cut-off frequency (ft) of the proposed Spacer layer based AlxGa1-xN/AlN/GaN High Electron Mobility Transistors (HEMTs) is modeled by considering the quasi-triangular quantum well. To obtain charge density ns, the variation of Fermi level with supply voltage and the formation of various energy sub-bands E0, E1 are considered. The obtained results are simple and easy to analyze the sheet carrier density, DC model and microwave frequency performance analysis for nanoscale Spacer layer based AlxGa1-xN/AlN/GaN HEMT power devices. The Spacer layer based AlGaN/AlN/GaN heterostructure HEMTs shows excellent promise as one of the candidates to substitute present AlGaN/GaN HEMTs for future high speed and high power applications. Derived model results for drain current, transconductance, current-gain cutoff frequency for different short and long gate length device are calibrated and verified with experimental data over a full range for gate and drain applied voltages and is useful for nanoscale and microwave analysis for circuit design.

  4. Curie temperature of Co-doped TiO2 as functions of carrier density and Co content evaluated from electrical transport and magnetization at low temperature regime

    Directory of Open Access Journals (Sweden)

    Thantip S. Krasienapibal

    2016-05-01

    Full Text Available Curie temperature (TC of anatase Co-doped TiO2 epitaxial thin films was systematically investigated as functions of carrier density (n and Co content (x by electrical transport and magnetization measurements at low temperature regime. The estimated TC from both measurements showed similar TC. For x = 0.03, 0.05, and 0.07, non-monotonic TC vs. n relations were observed, whereas TC was monotonically increasing function of n for x = 0.10. Possible mechanism of high TC ferromagnetism for this compound was discussed.

  5. Hall effect in the low charge-carrier density ferromagnet UCo{sub 0.5}Sb{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tran, V.H.; Troc, R.; Bukowski, Z. [W. Trzebiatowski Institute for Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wroclaw (Poland); Paschen, S.; Steglich, F. [Max-Planck Institut fuer Chemische Physik fester Stoffe, 01187 Dresden (Germany)

    2006-01-01

    The Hall coefficient R {sub H} of ferromagnetic UCo{sub 0.5}Sb{sub 2} (T {sub C}=64.5 K) has been measured on a single crystal in the temperature range 2-300 K and in magnetic fields up to 7 T. The values of the normal R{sub 0} and anomalous R{sub s} coefficients were estimated by comparing R{sub H}(B) with magnetisation M (B) data. The charge carrier concentration is found to decrease rapidly when the system undergoes a transition to the ferromagnetic ordered state. The charge mobility appears to fall down by as much as two orders of magnitude for temperatures from 20 K to 2 K. We ascribe this behaviour to an enormous decrease of the carrier collision time. The temperature dependencies of the Hall mean free path and mobility can be consistently interpreted within the 2D-weak localization feature. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure.

    Science.gov (United States)

    Kim, Ji-In; Ji, Kwang Hwan; Jang, Mi; Yang, Hoichang; Choi, Rino; Jeong, Jae Kyeong

    2011-07-01

    Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel layers in transparent field-effect transistors (FETs), however, has been largely limited because of the materials' high carrier density (>1 × 10(20) cm(-3)), wide band gap, and polycrystalline structure. Here, we demonstrate that control over the cation composition in ITO-based oxide films via solid doping of titanium (Ti) can optimize the carrier concentration and suppress film crystallization. On 120 nm thick SiO(2)/Mo (200 nm)/glass substrates, transparent n-type FETs prepared with 4 at % Ti-doped ITO films and fabricated via the cosputtering of ITO and TiO(2) exhibited high electron mobilities of 13.4 cm(2) V(-1) s(-1), a low subthreshold gate swing of 0.25 V decade(-1), and a high I(on/)I(off) ratio of >1 × 10(8).

  7. Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

    Institute of Scientific and Technical Information of China (English)

    Ken K. Chin

    2011-01-01

    For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated,that have multiple transition energy levels among charge states,the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density.A graphical method is used to illustrate the solution of the problem.Relations among the transition energy levels of the multi-level defect are derived using the graphical method.Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work.

  8. Manipulating charge density waves in 1 T -TaS2 by charge-carrier doping: A first-principles investigation

    Science.gov (United States)

    Shao, D. F.; Xiao, R. C.; Lu, W. J.; Lv, H. Y.; Li, J. Y.; Zhu, X. B.; Sun, Y. P.

    2016-09-01

    The transition-metal dichalcogenide 1 T -TaS2 exhibits a rich set of charge-density-wave (CDW) orders. Recent investigations suggested that using light or an electric field can manipulate the commensurate CDW (CCDW) ground state. Such manipulations are considered to be determined by charge-carrier doping. Here we use first-principles calculations to simulate the carrier-doping effect on the CCDW in 1 T -TaS2 . We investigate the charge-doping effects on the electronic structures and phonon instabilities of the 1 T structure, and we analyze the doping-induced energy and distortion ratio variations in the CCDW structure. We found that both in bulk and monolayer 1 T -TaS2 , the CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric-field-induced hole doping increases the energy of the CCDW, so that the system transforms to a nearly commensurate CDW or a similar metastable state. On the other hand, even though the CCDW distortion is more stable upon in-plane electric-field-induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from the CCDW to a nearly commensurate CDW or a similar metastable state. We also estimate that hole doping can introduce potential superconductivity with a Tc of 6-7 K. Controllable switching of different states such as a CCDW/Mott insulating state, a metallic state, and even a superconducting state can be realized in 1 T -TaS2 . As a result, this material may have very promising applications in future electronic devices.

  9. Synthetic High-Density Lipoprotein-Like Nanocarrier Improved Cellular Transport of Lysosomal Cholesterol in Human Sterol Carrier Protein-Deficient Fibroblasts.

    Science.gov (United States)

    Nam, Da-Eun; Kim, Ok-Kyung; Park, Yoo Kyoung; Lee, Jeongmin

    2016-01-01

    Sterol carrier protein-2 (SCP-2), which is not found in tissues of people with Zellweger syndrome, facilitates the movement of cholesterol within cells, resulting in abnormal accumulation of cholesterol in SCP-2-deficient cells. This study investigated whether synthetic high-density lipoprotein-like nanocarrier (sHDL-NC) improves the cellular transport of lysosomal cholesterol to plasma membrane in SCP-2-deficient fibroblasts. Human SCP-2-deficient fibroblasts were incubated with [(3)H-cholesterol]LDL as a source of cholesterol and sHDL-NC. The cells were fractionated by centrifugation permit tracking of [(3)H]-cholesterol from lysosome into plasma membrane. Furthermore, cellular content of cholesteryl ester as a storage form and mRNA expression of low-density lipoprotein (LDL) receptor were measured to support the cholesterol transport to plasma membrane. Incubation with sHDL-NC for 8 h significantly increased uptake of [(3)H]-cholesterol to lysosome by 53% and further enhanced the transport of [(3)H]-cholesterol to plasma membrane by 32%. Treatment with sHDL-NC significantly reduced cellular content of cholesteryl ester and increased mRNA expression of LDL receptor (LDL-R). In conclusion, sHDL-NC enables increased transport of lysosomal cholesterol to plasma membrane. In addition, these data were indirectly supported by decreased cellular content of cholesteryl ester and increased gene expression of LDL-R. Therefore, sHDL-NC may be a useful vehicle for transporting cholesterol, which may help to prevent accumulation of cholesterol in SCP-2-deficient fibroblasts.

  10. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  11. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    in Asia and will balance the carrier acquisitions of the United States, the United Kingdom, Russia and India. China’s current military strategy is predominantly defensive, its offensive elements being mainly focused on Taiwan. If China decides to acquire a large carrier with offensive capabilities......, then the country will also acquire the capability to project military power into the region beyond Taiwan, which it does not possess today. In this way, China will have the military capability to permit a change of strategy from the mainly defensive, mainland, Taiwan-based strategy to a more assertive strategy...... catapult with which to launch the fi ghter aircraft, not to mention the possible development of a nuclear power plant for the ship. The Russian press has indicated that China is negotiating to buy SU-33 fi ghters, which Russia uses on the Kuznetsov carrier. The SU-33 is, in its modernized version...

  12. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    Science.gov (United States)

    Mitoma, Nobuhiko; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Kizu, Takio; Lin, Meng-Fang; Fujiwara, Akihiko; Nabatame, Toshihide; Tsukagoshi, Kazuhito

    2015-01-01

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  13. Investigation of charges carrier density in phosphorus and boron doped SiN{sub x}:H layers for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paviet-Salomon, B., E-mail: bertrand.paviet-salomon@epfl.ch [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Gall, S. [Commissariat à l’Énergie Atomique (CEA), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (LITEN), Institut National de l’Énergie Solaire - INES, 50 avenue du Lac Léman, 73377 Le Bourget du Lac (France); Slaoui, A. [Institut de l’Électronique du Solide et des Systèmes (InESS), Unité Mixte de Recherche 7163 Centre National de la Recherche Scientifique-Université de Strasbourg (UMR 7163 CNRS-UDS), 23 rue du Loess, BP 20 CR, 67037 Strasbourg (France)

    2013-05-15

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q{sub fix}) and the effective lifetimes (τ{sub eff}) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ{sub eff} than standard undoped layers. In contrast, B-doped layers exhibit lower τ{sub eff}. A strong Q{sub fix} decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges.

  14. Hydrogen carriers

    Science.gov (United States)

    He, Teng; Pachfule, Pradip; Wu, Hui; Xu, Qiang; Chen, Ping

    2016-12-01

    Hydrogen has the potential to be a major energy vector in a renewable and sustainable future energy mix. The efficient production, storage and delivery of hydrogen are key technical issues that require improvement before its potential can be realized. In this Review, we focus on recent advances in materials development for on-board hydrogen storage. We highlight the strategic design and optimization of hydrides of light-weight elements (for example, boron, nitrogen and carbon) and physisorbents (for example, metal-organic and covalent organic frameworks). Furthermore, hydrogen carriers (for example, NH3, CH3OH-H2O and cycloalkanes) for large-scale distribution and for on-site hydrogen generation are discussed with an emphasis on dehydrogenation catalysts.

  15. Fabrication of TiO2-NTs and TiO2-NTs covered honeycomb lattice and investigation of carrier densities in I-/I3- electrolyte by electrochemical impedance spectroscopy

    Science.gov (United States)

    Baran, Evrim; Yazıcı, Birgül

    2015-12-01

    The TiO2 nanotubes (NTs) were produced by one-step (1S) and two-step (2S) anodization technique. Effects of various anodization potential and times on the growth of TiO2-NTs were investigated by using Field Emission-Scanning Electron Microscopy (FE-SEM). The crystal structure of the electrodes was determined with X-ray powder diffractometry (XRD). The most suitable potential and time for TiO2-NTs obtained by both of anodization methods were found to be 21 V and 4 h. XRD results indicated that 2S anodization technique provided better crystallinity. The electrochemical behaviors of the electrodes in acetonitrile electrolyte contained I-/I3- were examined by utilizing electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV) techniques. Electrochemical results showed that 2S anodization technique increases the carrier densities (ND) value of TiO2-NTs, and flat band potential is shifted by 50 mV to more negative values.

  16. Charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene): Effects of carrier bimolecular recombination and trapping

    Science.gov (United States)

    Soci, Cesare; Moses, Daniel; Xu, Qing-Hua; Heeger, Alan J.

    2005-12-01

    We have studied the charge-carrier relaxation dynamics in highly ordered poly( p -phenylene vinylene) over a broad time range using fast (t>100ps) transient photoconductivity measurements. The carrier density was also monitored (t>100fs) by means of photoinduced absorption probed at the infrared active vibrational modes. We find that promptly upon charge-carrier photogeneration, the initial polaron dynamics is governed by bimolecular recombination, while later in the subnanosecond time regime carrier trapping gives rise to an exponential decay of the photocurrent. The more sensitive transient photocurrent measurements indicate that in the low excitation regime, when the density of photocarriers is comparable to that of the trapping states (˜1016cm-3) , carrier hopping between traps along with transport via extended states determines the carrier relaxation, a mechanism that is manifested by a long-lived photocurrent “tail.” This photocurrent tail is reduced by lowering the temperature and/or by increasing the excitation density. Based on these data, we develop a comprehensive kinetic model that takes into account the bipolar charge transport, the free-carrier bimolecular recombination, the carrier trapping, and the carrier recombination involving free and trapped carriers.

  17. Peptide-Carrier Conjugation

    DEFF Research Database (Denmark)

    Hansen, Paul Robert

    2015-01-01

    To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....

  18. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  19. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    OpenAIRE

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-01-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found incre...

  20. Carrier Statistics and Quantum Capacitance Models of Graphene Nanoscroll

    Directory of Open Access Journals (Sweden)

    M. Khaledian

    2014-01-01

    schematic perfect scroll-like Archimedes spiral. The DOS model was derived at first, while it was later applied to compute the carrier concentration and quantum capacitance model. Furthermore, the carrier concentration and quantum capacitance were modeled for both degenerate and nondegenerate regimes, along with examining the effect of structural parameters and chirality number on the density of state and carrier concentration. Latterly, the temperature effect on the quantum capacitance was studied too.

  1. Composite cam carrier

    Energy Technology Data Exchange (ETDEWEB)

    Wicks, Christopher Donald; Madin, Mark Michael

    2017-03-14

    A cam carrier assembly includes a cylinder head having valves and a camshaft having lobes. A cam carrier has a first side coupled with the cylinder head engaging around the valves and a second side with bearing surfaces supporting the camshaft. A series of apertures extend between the first and second sides for the lobes to interface with the valves. The cam carrier is made of carbon fiber composite insulating the camshaft from the cylinder head and providing substantial weight reduction to an upper section of an associated engine.

  2. Asymmetric Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Rasmussen, Peter Omand;

    2010-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on the measurements, it is shown that the spread effect of the discrete components from the motor current spectra is very effective independent of the modulation...... index. The flat motor current spectrum generates an acoustical noise close to the white noise, which may improve the acoustical performance of the drive. The new carrier wave is easy to implement digitally, without employing any external circuits. The modulation method can be used in open, as well...

  3. Photoinduced Transformation between Charge Carrier and Spin Carrier in Polymers

    Institute of Scientific and Technical Information of China (English)

    MEI Yuan; ZHAO Chang; SUN Xin

    2006-01-01

    By dynamical simulations, we show a transforming process between neutral soliton (spin carrier) and charged soliton (charge carrier) in polymers via photo-excitation, taking a polaron as the transitional bridge. It is photoinduced transformation between spin carrier and charge carrier. In this way, we demonstrate an access for polymers to be applied to spintronics.

  4. The value of energy carriers

    NARCIS (Netherlands)

    Gool, W. van

    1987-01-01

    The value of energy carriers can be described thermodynamically by the amount of heat (enthalpy method) or work (exergy or availability method) that can be obtained from the carriers. Prices for energy carriers are used in economics to express their values. The prices for energy carriers are often r

  5. Hydrogen: the future energy carrier.

    Science.gov (United States)

    Züttel, Andreas; Remhof, Arndt; Borgschulte, Andreas; Friedrichs, Oliver

    2010-07-28

    Since the beginning of the twenty-first century the limitations of the fossil age with regard to the continuing growth of energy demand, the peaking mining rate of oil, the growing impact of CO2 emissions on the environment and the dependency of the economy in the industrialized world on the availability of fossil fuels became very obvious. A major change in the energy economy from fossil energy carriers to renewable energy fluxes is necessary. The main challenge is to efficiently convert renewable energy into electricity and the storage of electricity or the production of a synthetic fuel. Hydrogen is produced from water by electricity through an electrolyser. The storage of hydrogen in its molecular or atomic form is a materials challenge. Some hydrides are known to exhibit a hydrogen density comparable to oil; however, these hydrides require a sophisticated storage system. The system energy density is significantly smaller than the energy density of fossil fuels. An interesting alternative to the direct storage of hydrogen are synthetic hydrocarbons produced from hydrogen and CO2 extracted from the atmosphere. They are CO2 neutral and stored like fossil fuels. Conventional combustion engines and turbines can be used in order to convert the stored energy into work and heat.

  6. Intestinal solute carriers

    DEFF Research Database (Denmark)

    Steffansen, Bente; Nielsen, Carsten Uhd; Brodin, Birger

    2004-01-01

    A large amount of absorptive intestinal membrane transporters play an important part in absorption and distribution of several nutrients, drugs and prodrugs. The present paper gives a general overview on intestinal solute carriers as well as on trends and strategies for targeting drugs and/or pro...

  7. Autonomous component carrier selection

    DEFF Research Database (Denmark)

    Garcia, Luis Guilherme Uzeda; Pedersen, Klaus; Mogensen, Preben

    2009-01-01

    in local areas, basing our study case on LTE-Advanced. We present extensive network simulation results to demonstrate that a simple and robust interference management scheme, called autonomous component carrier selection allows each cell to select the most attractive frequency configuration; improving...

  8. Carrier-free, continuous primary beer fermentation

    OpenAIRE

    Pires, Eduardo J.; Teixeira, J. A; Brányik, Tomáš; A.A. Vicente

    2014-01-01

    Developing a sustainable continuous fermentation reactor is one of the most ambitious tasks in brewing science, but it could bring great benefits regarding volumetric productivity to modern breweries. Immobilized cell technology is often applied to reach the large densities of yeast needed in a continuous fermentation process. However, the financial cost associated with the use of carriers for yeast immobilization is one of the major drawbacks in the technology. This work suggests that yeast ...

  9. Development of Passenger Air Carriers

    Directory of Open Access Journals (Sweden)

    Igor Diminik

    2006-09-01

    Full Text Available The work presents the development of carriers in passengerair traffic, and the focus is on the development and operationsof carriers in chartered passenger transport. After the SecondWorld War, there were only scheduled air carriers. The need formass transport of tourists resulted in the development of chartercarriers or usage of scheduled carriers under different commercialconditions acceptable for tourism. Eventually also low-costcarriers appeared and they realize an increasing share in thepassenger transport especially in the aviation developed countries.

  10. Unified description of charge-carrier mobilities in disordered semiconducting polymers

    NARCIS (Netherlands)

    Pasveer, WF; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, PA; Blom, PWM; de Leeuw, DM; Michels, MAJ

    2005-01-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in d

  11. Experimental and Ab Initio Ultrafast Carrier Dynamics in Plasmonic Nanoparticles

    Science.gov (United States)

    Brown, Ana M.; Sundararaman, Ravishankar; Narang, Prineha; Schwartzberg, Adam M.; Goddard, William A.; Atwater, Harry A.

    2017-02-01

    Ultrafast pump-probe measurements of plasmonic nanostructures probe the nonequilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of any fitting parameters. We account for detailed electronic-structure effects in the density of states, excited carrier distributions, electron-phonon coupling, and dielectric functions that allow us to avoid effective electron temperature approximations. Using this calculation method, we obtain excellent quantitative agreement with spectral and temporal features in transient-absorption measurements. In both our experiments and calculations, we identify the two major contributions of the initial response with distinct signatures: short-lived highly nonthermal excited carriers and longer-lived thermalizing carriers.

  12. Experimental and ab initio ultrafast carrier dynamics in plasmonic nanoparticles

    CERN Document Server

    Brown, Ana M; Narang, Prineha; Schwartzberg, Adam M; Goddard, William A; Atwater, Harry A

    2016-01-01

    Ultrafast pump-probe measurements of plasmonic nanostructures probe the non-equilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of any fitting parameters. We account for detailed electronic-structure effects in the density of states, excited carrier distributions, electron-phonon coupling, and dielectric functions which allow us to avoid effective electron temperature approximations. Using this calculation method, we obtain excellent quantitative agreement with spectral and temporal features in transient-absorption measurements. In both our experiments and calculations, we identify the two major contributions of the initial response with distinct signatures: short-lived highly non-thermal excited carriers and longer-lived thermalizing carriers.

  13. Charge carrier coherence and Hall effect in organic semiconductors.

    Science.gov (United States)

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  14. Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors

    Science.gov (United States)

    Steinhoff, A.; Florian, M.; Rösner, M.; Lorke, M.; Wehling, T. O.; Gies, C.; Jahnke, F.

    2016-09-01

    When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding energy. The question arises, whether this directly translates into equivalently faster carrier-carrier Coulomb scattering of excited carriers. Here we show that a combination of ab initio band-structure and many-body theory predicts Coulomb-mediated carrier relaxation on a sub-100 fs time scale for a wide range of excitation densities, which is less than an order of magnitude faster than in quantum wells.

  15. Maintainable substrate carrier for electroplating

    Science.gov (United States)

    Chen, Chen-An [Milpitas, CA; Abas, Emmanuel Chua [Laguna, PH; Divino, Edmundo Anida [Cavite, PH; Ermita, Jake Randal G [Laguna, PH; Capulong, Jose Francisco S [Laguna, PH; Castillo, Arnold Villamor [Batangas, PH; Ma,; Xiaobing, Diana [Saratoga, CA

    2012-07-17

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

  16. Maintainable substrate carrier for electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chen-An; Abas, Emmanuel Chua; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor; Ma, Diana Xiaobing

    2016-08-02

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.

  17. Glycosylation of solute carriers

    DEFF Research Database (Denmark)

    Pedersen, Nis Borbye; Carlsson, Michael C; Pedersen, Stine Helene Falsig

    2016-01-01

    as their posttranslational regulation, but only relatively little is known about the role of SLC glycosylation. Glycosylation is one of the most abundant posttranslational modifications of animal proteins and through recent advances in our understanding of protein-glycan interactions, the functional roles of SLC......Solute carriers (SLCs) are one of the largest groups of multi-spanning membrane proteins in mammals and include ubiquitously expressed proteins as well as proteins with highly restricted tissue expression. A vast number of studies have addressed the function and organization of SLCs as well...

  18. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  19. Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells

    KAUST Repository

    Melianas, Armantas

    2015-11-05

    In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium.

  20. Terahertz study of ultrafast carrier dynamics in InGa/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    2009-01-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay...... of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well...

  1. Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    Science.gov (United States)

    Porte, H. P.; Turchinovich, D.; Cooke, D. G.; Jepsen, P. Uhd

    2009-11-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.

  2. Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Porte, H P; Turchinovich, D; Cooke, D G; Jepsen, P Uhd, E-mail: hpor@fotonik.dtu.d [DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Oersteds Plads 343, DK 2800 Kongens Lyngby (Denmark)

    2009-11-15

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.

  3. LIQUIFIED NATURAL GAS (LNG CARRIERS

    Directory of Open Access Journals (Sweden)

    Daniel Posavec

    2010-12-01

    Full Text Available Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 LNG carriers currently in operation (the paper is published in Croatian.

  4. Two-dimensional double-quantum spectroscopy: peak shapes as a sensitive probe of carrier interactions in quantum wells

    CERN Document Server

    Tollerud, Jonathan O

    2016-01-01

    We identify carrier scattering at densities below which it has previously been observed in semiconductor quantum wells. These effects are evident in the peakshapes of 2D double-quantum spectra, which change as a function of excitation density. At high excitation densities ($\\geq 10^{9}$ carriers/,cm$^{-2}$) we observe untilted peaks similar to those reported in previous experiments. At low excitation densities (<$10^{8}$ carriers cm$^{-2}$) we observe narrower, tilted peaks. Using a simple simulation, we show that tilted peak-shapes are expected in double-quantum spectra when inhomogeneous broadening is much larger than homogeneous broadening, and that fast pure-decoherence of the double-quantum coherence can obscure this peak tilt. These results show that carrier interactions are important at lower densities than previously expected, and that the `natural' double-quantum peakshapes are hidden by carrier interactions at the excitation densities typically used. Furthermore, these results demonstrate that an...

  5. 42 CFR 421.200 - Carrier functions.

    Science.gov (United States)

    2010-10-01

    ... 42 Public Health 3 2010-10-01 2010-10-01 false Carrier functions. 421.200 Section 421.200 Public...) MEDICARE PROGRAM MEDICARE CONTRACTING Carriers § 421.200 Carrier functions. A contract between CMS and a carrier specifies the functions to be performed by the carrier. The contract may include any or all of...

  6. The growth limits of the low cost carrier model

    NARCIS (Netherlands)

    de Wit, J.G.; Zuidberg, J.

    2012-01-01

    Today, many low cost carriers (LCCs) continue to enjoy rapid growth and still have a fair number of new aircraft on order. There are signs however that the market for LCCs is limited, owing to increasing route density problems, primarily in Europe but seemingly also in North America: the fact that a

  7. Basic Stand Alone Carrier Line Items PUF

    Data.gov (United States)

    U.S. Department of Health & Human Services — This release contains the Basic Stand Alone (BSA) Carrier Line Items Public Use Files (PUF) with information from Medicare Carrier claims. The CMS BSA Carrier Line...

  8. Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers....

  9. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NARCIS (Netherlands)

    Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; De Leeuw, D.M.; Michels, M.A.J.

    2005-01-01

    From a numerically exact solution of the Master equation for hoppingtransport in a disordered energy landscape with a Gaussian densityof states, we determine the dependence on temperature, carrier density, and electric field of the charge carrier mobility. Experimentalspace-charge limited currents i

  10. Content Distribution for Telecom Carriers

    Directory of Open Access Journals (Sweden)

    Ben Falchuk

    2006-08-01

    Full Text Available Distribution of digital content is a key revenue opportunity for telecommunications carriers. As media content moves from analog and physical media-based distribution to digital on-line distribution, a great opportunity exists for carriers to claim their role in the media value chain and grow revenue by enhancing their broadband “all you can eat” high speed Internet access offer to incorporate delivery of a variety of paid content. By offering a distributed peer to peer content delivery capability with authentication, personalization and payment functions, carriers can gain a larger portion of the revenue paid for content both within and beyond their traditional service domains. This paper describes an approach to digital content distribution that leverages existing Intelligent Network infrastructure that many carriers already possess, as well as Web Services.

  11. Theoretical and experimental study of dynamics of photoexcited carriers in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Shishehchi, Sara; Bellotti, Enrico, E-mail: bellotti@bu.edu [ECE Department, Boston University, 8 Saint Mary' s Street, Boston, Massachusetts 02215 (United States); Rudin, Sergey; Garrett, Gregory A.; Wraback, Michael [Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, Maryland 20783 (United States)

    2013-12-21

    We present a theoretical and experimental study of the sub-picosecond dynamics of photo-excited carriers in GaN. In the theoretical model, interaction with an external ultrafast laser pulse is treated coherently and to account for the scattering mechanisms and dephasing processes, a generalized Monte-Carlo simulation is used. The scattering mechanisms included are carrier interactions with polar optical phonons and acoustic phonons, and carrier-carrier Coulomb interactions. We study the effect of different scattering mechanisms on the carrier densities. In the case that the excitation energy satisfies the threshold for polar optical scattering, phonon contribution is the dominant process in relaxing the system, otherwise, carrier-carrier mechanism is dominant. Furthermore, we present the temperature and pulse power dependent normalized luminescence intensity. The results are presented over a range of temperatures, electric field, and excitation energy of the laser pulse. For comparison, we also report the experimental time-resolved photoluminescence studies on GaN samples. There is a good agreement between the simulation and experiment in normalized luminescence intensity results. Therefore, we show that we can explain the dynamics of the photo-excited carriers in GaN by including only carrier-carrier and carrier-phonon interactions and a relatively simple two-band electronic structure model.

  12. Theoretical and experimental study of dynamics of photoexcited carriers in GaN

    Science.gov (United States)

    Shishehchi, Sara; Rudin, Sergey; Garrett, Gregory A.; Wraback, Michael; Bellotti, Enrico

    2013-12-01

    We present a theoretical and experimental study of the sub-picosecond dynamics of photo-excited carriers in GaN. In the theoretical model, interaction with an external ultrafast laser pulse is treated coherently and to account for the scattering mechanisms and dephasing processes, a generalized Monte-Carlo simulation is used. The scattering mechanisms included are carrier interactions with polar optical phonons and acoustic phonons, and carrier-carrier Coulomb interactions. We study the effect of different scattering mechanisms on the carrier densities. In the case that the excitation energy satisfies the threshold for polar optical scattering, phonon contribution is the dominant process in relaxing the system, otherwise, carrier-carrier mechanism is dominant. Furthermore, we present the temperature and pulse power dependent normalized luminescence intensity. The results are presented over a range of temperatures, electric field, and excitation energy of the laser pulse. For comparison, we also report the experimental time-resolved photoluminescence studies on GaN samples. There is a good agreement between the simulation and experiment in normalized luminescence intensity results. Therefore, we show that we can explain the dynamics of the photo-excited carriers in GaN by including only carrier-carrier and carrier-phonon interactions and a relatively simple two-band electronic structure model.

  13. Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons.

    Science.gov (United States)

    Natterer, Fabian D; Zhao, Yue; Wyrick, Jonathan; Chan, Yang-Hao; Ruan, Wen-Ying; Chou, Mei-Yin; Watanabe, Kenji; Taniguchi, Takashi; Zhitenev, Nikolai B; Stroscio, Joseph A

    2015-06-19

    The observation of phonons in graphene by inelastic electron tunneling spectroscopy has been met with limited success in previous measurements arising from weak signals and other spectral features which inhibit a clear distinction between phonons and miscellaneous excitations. Utilizing a back-gated graphene device that allows adjusting the global charge carrier density, we introduce an averaging method where individual tunneling spectra at varying charge carrier density are combined into one representative spectrum. This method improves the signal for inelastic transitions while it suppresses dispersive spectral features. We thereby map the total graphene phonon density of states, in good agreement with density functional calculations. Unexpectedly, an abrupt change in the phonon intensity is observed when the graphene charge carrier type is switched through a variation of the back-gate electrode potential. This sudden variation in phonon intensity is asymmetric in the carrier type, depending on the sign of the tunneling bias.

  14. Road density

    Data.gov (United States)

    U.S. Environmental Protection Agency — Road density is generally highly correlated with amount of developed land cover. High road densities usually indicate high levels of ecological disturbance. More...

  15. Investigation of Cu2ZnSnS4 thin-film solar cells with carrier concentration gradient

    Science.gov (United States)

    Xu, Jiaxiong

    2016-11-01

    To investigate the effect of carrier concentration gradient on Cu2ZnSnS4 (CZTS) thin-film solar cells, the properties of CZTS solar cells were studied by numerical method. The photovoltaic performances of carrier concentration gradient CZTS solar cells were calculated by the solutions of Poisson's equation, continuity equation, and current density equation using AFors-Het v2.4 program. The carrier concentration gradient was changed to analyze its effect. Compared with CZTS solar cells without carrier concentration gradient, the photovoltaic performances of CZTS solar cells can be enhanced by using carrier concentration gradient absorber. The carrier concentration gradient can extend the distribution region of built-in electric field, which is beneficial to the drift of photo-generated carriers. However, the carrier concentration gradient also affects the recombination and series resistances of solar cells. When the defect density of CZTS layer is high, the photo-generated carriers are affected significantly by recombination, resulting in slight effect of carrier concentration gradient. Therefore, the defect density should be reduced to enhance the effect of carrier concentration gradient on improving conversion efficiency of CZTS thin-film solar cells.

  16. Widely Tunable Infrared Antennas Using Free Carrier Refraction.

    Science.gov (United States)

    Lewi, Tomer; Iyer, Prasad P; Butakov, Nikita A; Mikhailovsky, Alexander A; Schuller, Jon A

    2015-12-01

    We demonstrate tuning of infrared Mie resonances by varying the carrier concentration in doped semiconductor antennas. We fabricate spherical silicon and germanium particles of varying sizes and doping concentrations. Single-particle infrared spectra reveal electric and magnetic dipole, quadrupole, and hexapole resonances. We subsequently demonstrate doping-dependent frequency shifts that follow simple Drude models, culminating in the emergence of plasmonic resonances at high doping levels and long wavelengths. These findings demonstrate the potential for actively tuning infrared Mie resonances by optically or electrically modulating charge carrier densities, thus providing an excellent platform for tunable metamaterials.

  17. Low-cost carriers fare competition effect

    NARCIS (Netherlands)

    Carmona Benitez, R.B.; Lodewijks, G.

    2010-01-01

    This paper examines the effects that low-cost carriers (LCC’s) produce when entering new routes operated only by full-service carriers (FSC’s) and routes operated by low-cost carriers in competition with full-service carriers. A mathematical model has been developed to determine what routes should b

  18. Intrinsic carrier multiplication efficiency in bulk Si crystals evaluated by optical-pump/terahertz-probe spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Yamashita, G.; Nagai, M., E-mail: mnagai@mp.es.osaka-u.ac.jp, E-mail: ashida@mp.es.osaka-u.ac.jp; Ashida, M., E-mail: mnagai@mp.es.osaka-u.ac.jp, E-mail: ashida@mp.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Osaka 560-8531 (Japan); Matsubara, E. [Graduate School of Engineering Science, Osaka University, Osaka 560-8531 (Japan); Department of Physics, Osaka Dental University, Hirakata, Osaka 573-1121 (Japan); Kanemitsu, Y. [Institute for Chemical Research, Kyoto University, Kyoto 611-0011 (Japan)

    2014-12-08

    We estimated the carrier multiplication efficiency in the most common solar-cell material, Si, by using optical-pump/terahertz-probe spectroscopy. Through close analysis of time-resolved data, we extracted the exact number of photoexcited carriers from the sheet carrier density 10 ps after photoexcitation, excluding the influences of spatial diffusion and surface recombination in the time domain. For incident photon energies greater than 4.0 eV, we observed enhanced internal quantum efficiency due to carrier multiplication. The evaluated value of internal quantum efficiency agrees well with the results of photocurrent measurements. This optical method allows us to estimate the carrier multiplication and surface recombination of carriers quantitatively, which are crucial for the design of the solar cells.

  19. Hot carrier-assisted intrinsic photoresponse in graphene.

    Science.gov (United States)

    Gabor, Nathaniel M; Song, Justin C W; Ma, Qiong; Nair, Nityan L; Taychatanapat, Thiti; Watanabe, Kenji; Taniguchi, Takashi; Levitov, Leonid S; Jarillo-Herrero, Pablo

    2011-11-01

    We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.

  20. Theory of Carrier Phase Ambiguity Resolution

    Institute of Scientific and Technical Information of China (English)

    P. J. G. Teunissen

    2003-01-01

    Carrier phase ambiguity resolution is the key to high precision Global Navigation Satellite System(GNSS) positioning and navigation. It applies to a great variety of current and future models of GPS, modernized GPS and Galileo. A proper handling of carrier phase ambiguity resolution requires a proper understanding of the underlying theory of integer inference. In this contribution a brief review is given of the probabilistic theory of integer ambiguity estimation. We describe the concept of ambiguity pull-in regions, introduce the class of admissible integer estimators, determine their probability mass functions and show how their variability solution. The theory is worked out in more detail for integer least-squares and integer bootstrapping. It is shown that the integer least-squares principle maximizes the probability of correct integer estimation. Sharp and easy-to-compute bounds are given for both the ambiguity success rate and the baseline's probability of concentration. Finally the probability density function of the ambiguity residuals is determined. This allows one for the first time to formulate rigorous tests for the integerness of the parameters.

  1. Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method

    Energy Technology Data Exchange (ETDEWEB)

    Lu, I. Lin; Wu, Yuh-Renn [Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei (China); Singh, Jasprit [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI (United States)

    2011-07-15

    In this paper, we have applied the Monte Carlo method to study carrier dynamics in InGaN quantum well. Vertical and lateral transport and its impact on device radiative efficiency is studied for different In compositions, dislocation densities, temperatures, and carrier densities. Our results show that the non-radiative recombination caused by the defect trapping plays a dominating role for higher indium composition and this limits the internal quantum efficiency (IQE). For lower indium composition cases, carrier leakage plays some role in the mid to high injection conditions and carrier leakage is strong in very high carrier density in all cases. Our results suggest that reducing the trap density and QCSE are still the key factors to improve the IQE. The paper examines the relative roles of leakage and non-radiative processes on IQE. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Carrier Induced Magnetism In Correlated Materials

    Science.gov (United States)

    Lee, Byounghak; Trivedi, Nandini; Zhang, Shiwei; Martin, Richard

    2003-03-01

    We study a two dimensional Hubbard model with magnetic impurities using a combination of single particle and quantum Monte Carlo techniques. Our aim is to determine the interaction between magnetic ions in both strongly interacting hosts, such as magnetic perovskites, and weakly interacting hosts, such as magnetic semiconductors. In the first step, the interactions are treated within an inhomogeneous Hartree-Fock approach and self-consistency is demanded at each site, providing a more accurate treatment of disorder effects compared with other mean-field treatments such as virtual crystal and coherent potential approximations. These are then augmented with determinantal quantum Monte Carlo techniques that treat the electron interactions more accurately. We calculate the exchange coupling as a function of the magnetic impurity concentration, the repulsive electron-electron interaction, carrier concentration, and temperature. We compare the calculated local density of states with STM measurements and also obtain the ferromagnetic transition temperature.

  3. 75 FR 2923 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-01-19

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that its Motor Carrier Safety Advisory Committee (MCSAC)...

  4. 75 FR 72863 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-11-26

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration, DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that the Agency's Motor Carrier Safety Advisory Committee...

  5. 75 FR 50797 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-08-17

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee Meeting. SUMMARY: FMCSA announces that its Motor Carrier Safety Advisory Committee (MCSAC)...

  6. 76 FR 12214 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2011-03-04

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration, DOT. ACTION: Notice: Announcement of Motor Carrier Safety Advisory Committee meeting; request for comment. SUMMARY: The Federal Motor Carrier Safety...

  7. 75 FR 29384 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2010-05-25

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory Committee meeting. SUMMARY: FMCSA announces that its Motor Carrier Safety Advisory Committee (MCSAC)...

  8. Near-infrared free carrier absorption in heavily doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Baker-Finch, Simeon C., E-mail: simeon.bakerfinch@gmail.com [School of Engineering, Australian National University, Canberra, ACT 0200 (Australia); PV Lighthouse, Coledale, NSW 2515 (Australia); McIntosh, Keith R. [PV Lighthouse, Coledale, NSW 2515 (Australia); Yan, Di; Fong, Kean Chern; Kho, Teng C. [School of Engineering, Australian National University, Canberra, ACT 0200 (Australia)

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  9. Lung density

    DEFF Research Database (Denmark)

    Garnett, E S; Webber, C E; Coates, G

    1977-01-01

    breathing in the sitting position ranged from 0.25 to 0.37 g.cm-3. Subnormal values were found in patients with emphsema. In patients with pulmonary congestion and edema, lung density values ranged from 0.33 to 0.93 g.cm-3. The lung density measurement correlated well with the findings in chest radiographs...

  10. ISS qualified thermal carrier equipment

    Science.gov (United States)

    Deuser, Mark S.; Vellinger, John C.; Jennings, Wm. M.

    2000-01-01

    Biotechnology is undergoing a period of rapid and sustained growth, a trend which is expected to continue as the general population ages and as new medical treatments and products are conceived. As pharmaceutical and biomedical companies continue to search for improved methods of production and, for answers to basic research questions, they will seek out new avenues of research. Space processing on the International Space Station (ISS) offers such an opportunity! Space is rapidly becoming an industrial laboratory for biotechnology research and processing. Space bioprocessing offers exciting possibilities for developing new pharmaceuticals and medical treatments, which can be used to benefit mankind on Earth. It also represents a new economic frontier for the private sector. For over eight years, the thermal carrier development team at SHOT has been working with government and commercial sector scientists who are conducting microgravity experiments that require thermal control. SHOT realized several years ago that the hardware currently being used for microgravity thermal control was becoming obsolete. It is likely that the government, academic, and industrial bioscience community members could utilize SHOT's hardware as a replacement to their current microgravity thermal carrier equipment. Moreover, SHOT is aware of several international scientists interested in utilizing our space qualified thermal carrier. SHOT's economic financing concept could be extremely beneficial to the international participant, while providing a source of geographic return for their particular region. Beginning in 2000, flight qualified thermal carriers are expected to be available to both the private and government sectors. .

  11. Hot carrier degradation in semiconductor devices

    CERN Document Server

    2015-01-01

    This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects imp...

  12. Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, Gintautas; Mickevicius, Juras; Dobrovolskas, Darius; Kuokstis, Edmundas [Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio 9-III, 10222 Vilnius (Lithuania); Shur, Michael S. [Department of ECE and CIE, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology Inc., 1195 Atlas Road, Columbia, SC 29209 (United States)

    2012-07-15

    Carrier dynamics and emission efficiency droop in AlGaN epilayers containing different Al content were studied under pulsed (30 ps) and quasi-steady-state photoexcitation. Samples with Al content ranging from 17% to 50% but having similar carrier lifetimes (50-80 ps) were selected for the study. Considerable heating of nonequilibrium carriers at room temperature was observed. Carrier redistribution down to deeper localized states is demonstrated. It is shown that the temperature decay is faster than the decay of localized carriers, which determine the photoluminescence decay kinetics at later stages of the decay. The efficiency droop onsets at lower excitation power densities in the samples with higher Al content presumably having higher density of nonradiative recombination centers and higher density of localized states. The results are in favour of the assumption that the droop in these epilayers is caused by saturation of the localized states and hopping of less localized carriers to the centers of nonradiative recombination. The effect might be enhanced by carrier heating (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Large-amplitude chirped coherent phonons in tellurium mediated by ultrafast photoexcited carrier diffusion

    Science.gov (United States)

    Kamaraju, N.; Kumar, Sunil; Anija, M.; Sood, A. K.

    2010-11-01

    We report femtosecond time-resolved reflectivity measurements of coherent phonons in tellurium performed over a wide range of temperatures (3-296 K) and pump-laser intensities. A totally symmetric A1 coherent phonon at 3.6 THz responsible for the oscillations in the reflectivity data is observed to be strongly positively chirped (i.e., phonon time period decreases at longer pump-probe delay times) with increasing photoexcited carrier density, more so at lower temperatures. We show that the temperature dependence of the coherent phonon frequency is anomalous (i.e, increasing with increasing temperature) at high photoexcited carrier density due to electron-phonon interaction. At the highest photoexcited carrier density of ˜1.4×1021cm-3 and the sample temperature of 3 K, the lattice displacement of the coherent phonon mode is estimated to be as high as ˜0.24Å . Numerical simulations based on coupled effects of optical absorption and carrier diffusion reveal that the diffusion of carriers dominates the nonoscillatory electronic part of the time-resolved reflectivity. Finally, using the pump-probe experiments at low carrier density of 6×1018cm-3 , we separate the phonon anharmonicity to obtain the electron-phonon coupling contribution to the phonon frequency and linewidth.

  14. Measurement of carrier transport and recombination parameter in heavily doped silicon

    Science.gov (United States)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  15. Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

    Science.gov (United States)

    Wang, Shaoqing; Jin, Zhi; Muhammad, Asif; Peng, Songang; Huang, Xinnan; Zhang, Dayong; Shi, Jingyuan

    2016-10-01

    The most common method of mobility extraction for graphene field-effect transistors is proposed by Kim. Kim’s method assumes a constant mobility independent of carrier density and gets the mobility by fitting the transfer curves. However, carrier mobility changes with the carrier density, leading to the inaccuracy of Kim’s method. In our paper, a new and more accurate method is proposed to extract mobility by fitting the output curves at a constant gate voltage. The output curves are fitted using several kinds of current-voltage models. Besides the models in the literature, we present a modified model, which takes into account not only the quantum capacitance, contact resistance, but also a modified drift velocity-field relationship. Comparing with the other models, this new model can fit better with our experimental data. The dependence of carrier intrinsic mobility on carrier density is obtained based on this model.

  16. Fatigue reliability for LNG carrier

    Institute of Scientific and Technical Information of China (English)

    Xiao Taoyun; Zhang Qin; Jin Wulei; Xu Shuai

    2011-01-01

    The procedure of reliability-based fatigue analysis of liquefied natural gas (LNG) carrier of membrane type under wave loads is presented. The stress responses of the hotspots in regular waves with different wave heading angles and wave lengths are evaluated by global ship finite element method (FEM). Based on the probabilistic distribution function of hotspots' short-term stress-range using spectral-based analysis, Weibull distribution is adopted and discussed for fitting the long-term probabilistic distribution of stress-range. Based on linear cumulative damage theory, fatigue damage is characterized by an S-N relationship, and limit state function is established. Structural fatigue damage behavior of several typical hotspots of LNG middle ship section is clarified and reliability analysis is performed. It is believed that the presented results and conclusions can be of use in calibration for practical design and initial fatigue safety evaluation for membrane type LNG carrier.

  17. A Customized Finger Brachytherapy Carrier

    OpenAIRE

    Wadhwa, Supneet Singh; Duggal, Nidhi

    2013-01-01

    In recent years, radiation therapy has been used with increasing frequency in the management of neoplasms of the head and neck region. Brachytherapy is a method of radiation treatment in which sealed radioactive sources are used to deliver the dose a short distance by interstitial (direct insertion into tissue), intracavitary (placement within a cavity) or surface application (molds). Mold brachytherapy is radiation delivered via a custom-fabricated carriers, designed to provide a more consta...

  18. Preventative maintenance of straddle carriers

    Directory of Open Access Journals (Sweden)

    Si Li

    2015-02-01

    Full Text Available Background: Robotic vehicles such as straddle carriers represent a popular form of cargo handling amongst container terminal operators.Objectives: The purpose of this industry-driven study is to model preventative maintenance (PM influences on the operational effectiveness of straddle carriers.Method: The study employs historical data consisting of 21 273 work orders covering a 27-month period. Two models are developed, both of which forecast influences of PM regimes for different types of carrier.Results: The findings of the study suggest that the reliability of the straddle fleet decreases with increased intervals of PM services. The study also finds that three factors – namely resources, number of new straddles, and the number of new lifting work centres – influence the performances of straddles.Conclusion: The authors argue that this collaborative research exercise makes a significant contribution to existing supply chain management literature, particularly in the area of operations efficiency. The study also serves as an avenue to enhance relevant management practice.

  19. Spacelab carrier complement thermal design and performance

    Science.gov (United States)

    Bancroft, S.; Key, R.; Kittredge, S.

    1992-01-01

    The present discussion of the Spacelab carrier complement, which encompasses a Module Carrier, a Module-Pallet Carrier, and a Multiplexer/Demultiplexer Pallet, gives attention to both active and passive thermal performance capabilities, and presents ground testing and analytical results obtained to date. An account is given of the prospective use of a Spacelab Multipurpose Experiment Support Structure.

  20. Responsible implementation of expanded carrier screening

    Science.gov (United States)

    Henneman, Lidewij; Borry, Pascal; Chokoshvili, Davit; Cornel, Martina C; van El, Carla G; Forzano, Francesca; Hall, Alison; Howard, Heidi C; Janssens, Sandra; Kayserili, Hülya; Lakeman, Phillis; Lucassen, Anneke; Metcalfe, Sylvia A; Vidmar, Lovro; de Wert, Guido; Dondorp, Wybo J; Peterlin, Borut

    2016-01-01

    This document of the European Society of Human Genetics contains recommendations regarding responsible implementation of expanded carrier screening. Carrier screening is defined here as the detection of carrier status of recessive diseases in couples or persons who do not have an a priori increased risk of being a carrier based on their or their partners' personal or family history. Expanded carrier screening offers carrier screening for multiple autosomal and X-linked recessive disorders, facilitated by new genetic testing technologies, and allows testing of individuals regardless of ancestry or geographic origin. Carrier screening aims to identify couples who have an increased risk of having an affected child in order to facilitate informed reproductive decision making. In previous decades, carrier screening was typically performed for one or few relatively common recessive disorders associated with significant morbidity, reduced life-expectancy and often because of a considerable higher carrier frequency in a specific population for certain diseases. New genetic testing technologies enable the expansion of screening to multiple conditions, genes or sequence variants. Expanded carrier screening panels that have been introduced to date have been advertised and offered to health care professionals and the public on a commercial basis. This document discusses the challenges that expanded carrier screening might pose in the context of the lessons learnt from decades of population-based carrier screening and in the context of existing screening criteria. It aims to contribute to the public and professional discussion and to arrive at better clinical and laboratory practice guidelines. PMID:26980105

  1. Responsible implementation of expanded carrier screening.

    Science.gov (United States)

    Henneman, Lidewij; Borry, Pascal; Chokoshvili, Davit; Cornel, Martina C; van El, Carla G; Forzano, Francesca; Hall, Alison; Howard, Heidi C; Janssens, Sandra; Kayserili, Hülya; Lakeman, Phillis; Lucassen, Anneke; Metcalfe, Sylvia A; Vidmar, Lovro; de Wert, Guido; Dondorp, Wybo J; Peterlin, Borut

    2016-06-01

    This document of the European Society of Human Genetics contains recommendations regarding responsible implementation of expanded carrier screening. Carrier screening is defined here as the detection of carrier status of recessive diseases in couples or persons who do not have an a priori increased risk of being a carrier based on their or their partners' personal or family history. Expanded carrier screening offers carrier screening for multiple autosomal and X-linked recessive disorders, facilitated by new genetic testing technologies, and allows testing of individuals regardless of ancestry or geographic origin. Carrier screening aims to identify couples who have an increased risk of having an affected child in order to facilitate informed reproductive decision making. In previous decades, carrier screening was typically performed for one or few relatively common recessive disorders associated with significant morbidity, reduced life-expectancy and often because of a considerable higher carrier frequency in a specific population for certain diseases. New genetic testing technologies enable the expansion of screening to multiple conditions, genes or sequence variants. Expanded carrier screening panels that have been introduced to date have been advertised and offered to health care professionals and the public on a commercial basis. This document discusses the challenges that expanded carrier screening might pose in the context of the lessons learnt from decades of population-based carrier screening and in the context of existing screening criteria. It aims to contribute to the public and professional discussion and to arrive at better clinical and laboratory practice guidelines.

  2. 7 CFR 33.4 - Carrier.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Carrier. 33.4 Section 33.4 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... ISSUED UNDER AUTHORITY OF THE EXPORT APPLE ACT Definitions § 33.4 Carrier. Carrier means any common...

  3. Carbon phosphide monolayers with superior carrier mobility

    Science.gov (United States)

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

    2016-04-01

    Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics.Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great

  4. Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2011-12-01

    The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.

  5. Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

    Science.gov (United States)

    Vonroos, O. H.

    1982-01-01

    When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

  6. Six-wave mixing induced by free-carrier plasma in silicon nanowire waveguides

    CERN Document Server

    Zhou, Heng; Huang, Shu-Wei; Zhou, Linjie; Qiu, Kun; Wong, Chee Wei

    2016-01-01

    Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third-order Kerr nonlinearity, enabling salient and abundant four-wave-mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two-photon absorption generates high free-carrier densities, with corresponding fifth-order nonlinearity in the forms of free-carrier dispersion and free-carrier absorption. However, whether these fifth-order free-carrier nonlinear effects can lead to six-wave-mixing dynamics still remains an open question until now. Here we report the demonstration of free-carrier-induced six-wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six-wave-mixing efficiency and its higher sensitivity to pump power, are originally observed and verfied by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for d...

  7. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    Science.gov (United States)

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  8. 49 CFR 376.22 - Exemption for private carrier leasing and leasing between authorized carriers.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Exemption for private carrier leasing and leasing... MOTOR CARRIER SAFETY REGULATIONS LEASE AND INTERCHANGE OF VEHICLES Exemptions for the Leasing Regulations § 376.22 Exemption for private carrier leasing and leasing between authorized carriers....

  9. Carrier synchronization for STBC OFDM systems

    Institute of Scientific and Technical Information of China (English)

    Cai Jueping; Song Wentao; Li Zan; Ge Jianhua

    2005-01-01

    All-digital carrier synchronization strategies and algorithms for space-time block coding (STBC) orthogonal frequency division multiplexing (OFDM) are proposed in this paper. In our scheme, the continuous pilots (CP) are saved, and the complexity of carrier synchronization is reduced significantly by dividing the process into three steps. The coarse carrier synchronization and the fine carrier synchronization algorithms are investigated and analyzed in detail. Simulations show that the carrier can be locked into tracking mode quickly, and the residual frequency error satisfies the system requirement in both stationary and mobile environments.

  10. Low-cost carriers fare competition effect

    OpenAIRE

    Carmona Benitez, R.B.; Lodewijks, G.

    2010-01-01

    This paper examines the effects that low-cost carriers (LCC’s) produce when entering new routes operated only by full-service carriers (FSC’s) and routes operated by low-cost carriers in competition with full-service carriers. A mathematical model has been developed to determine what routes should be operated by a low-cost carrier with better possibilities to subsist. The proposed model in this paper was set up by analyzing The United States domestic air transport market 2005 year database fr...

  11. Stochastic Ordering based Carrier-to-Interference Ratio Analysis for the Shotgun Cellular Systems

    CERN Document Server

    Madhusudhanan, Prasanna; Youjian,; Liu,; Brown, Timothy X; Baker, Kenneth R

    2011-01-01

    A simple analytical tool based on stochastic ordering is developed to compare the distributions of carrier-to-interference ratio at the mobile station of two cellular systems where the base stations are distributed randomly according to certain non-homogeneous Poisson point processes. The comparison is conveniently done by studying only the base station densities without having to solve for the distributions of the carrier-to-interference ratio, that are often hard to obtain.

  12. Infrared spectroscopic study of carrier scattering in gated CVD graphene

    Science.gov (United States)

    Yu, Kwangnam; Kim, Jiho; Kim, Joo Youn; Lee, Wonki; Hwang, Jun Yeon; Hwang, E. H.; Choi, E. J.

    2016-12-01

    We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy and determined the carrier scattering rate (γ ) as a function of the varied carrier density (n ). The n -dependent γ (n ) was obtained for a series of conditions systematically changed as (10 K, vacuum) → (300 K, vacuum) → (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A /√{n } ) and short-range defect (=B √{n } ) are the major scattering sources which constitute the total scattering γ =A /√{n }+B √{n } , (2) among various kinds of phonons populated at room-T , surface polar phonon of the SiO2 substrate is the dominantly scattering source, and (3) in air, the gas molecules adsorbed on graphene play a dual role in carrier scattering as charged impurity center and resonant scattering center. We present the absolute scattering strengths of those individual scattering sources, which provides the complete map of scattering mechanism of CVD graphene. This scattering map allows us to find out practical measures to suppress the individual scatterings, the mobility gains accompanied by them, and finally the ultimate attainable carrier mobility for CVD graphene.

  13. Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as seen via Microphotoluminescence

    Science.gov (United States)

    Mascarenhas, Angelo; Fluegel, Brian; Alberi, Kirstin; Zhang, Yong-Hang

    2015-03-01

    The ability to spatially resolve the degree to which extended defects impact carrier diffusion lengths and lifetimes is important for determining upper limits for defect densities in semiconductor devices. We show that a new spatially and temporally resolved photoluminescence (PL) imaging technique can be used to accurately extract carrier lifetimes in the immediate vicinity of dark-line defects in CdTe/MgCdTe double heterostructures. A series of PL images captured during the decay process show that extended defects with a density of 1.4x10-5 cm-2 deplete photogenerated charge carriers from the surrounding semiconductor material on a nanosecond time scale. The technique makes it possible to elucidate the interplay between nonradiative carrier recombination and carrier diffusion and reveals that they both combine to degrade the PL intensity over a fractional area that is much larger than the physical size of the defects. Carrier lifetimes are correctly determined from numerical simulations of the decay behavior by taking these two effects into account. Our study demonstrates that it is crucial to measure and account for the influence of local defects in the measurement of carrier lifetime and diffusion, which are key transport parameters for the design and modeling of advanced solar-cell and light-emitting devices. We acknowledge the financial support of the Department of Energy Office of Science under Grant No. DE-AC36-08GO28308.

  14. BER Performance of IEEE 802.11ad for Single Carrier and Multi Carrier

    Directory of Open Access Journals (Sweden)

    Abhishek Kumar Gupta

    2012-05-01

    Full Text Available In present scenario 802.11n is one of the fastest standards which is widely popular. It provides a theoretical maximum of 450 megabits per second (Mbps, with a typical throughput of 100Mbps. As we know, there is high demand for higher speed due to an increasing of high definition (HD video on smart phone usage and home entertainment. As 802.11n is not able to provide the required speed needed for these uses, thus there is need for technologies which can meet therequirement. IEEE 802.11ad is one of such standards which meet the requirement needed for the above. IEEE 802.11ad standard operates at 60 GHz frequency, promise to deliver from 1 to 7 Gbps. 60 GHz band is one of the largest unlicensed bandwidth with availability of at least 5 GHz of continuous bandwidth worldwide. In this paper we have tested the IEEE 802.11ad system model Bits Error Rate (BER for different modulation technique under several coding scheme for both Single Carrier and Multi Carriers. In this model the modulation technique mainly used are Binary Phase Shift Keying (BPSK, Quaternary Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM, 64-Quadrature Amplitude Modulation (QAM and the coding scheme used is Low Density Parity Check (LDPC code with different code rate.

  15. Non-permeable substrate carrier for electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Abas, Emmanuel Chua; Chen, Chen-An; Ma, Diana Xiaobing; Ganti, Kalyana Bhargava

    2012-11-27

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

  16. Non-permeable substrate carrier for electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Abas, Emmanuel Chua; Chen, Chen-an; Ma, Diana Xiaobing; Ganti, Kalyana; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor

    2015-12-29

    One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

  17. Wuestite - a solar energy carrier

    Energy Technology Data Exchange (ETDEWEB)

    Weidenkaff, A.; Nueesch, P.; Wokaun, A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Reller, A. [Hamburg Univ., Hamburg (Germany)

    1997-06-01

    Hydrogen is produced when Wuestite (Fe{sub 1-y}O) is oxidised by water. This reaction is part of a two-step thermochemical metal oxide cycle for the storage of solar energy in the form of chemical energy carriers, characterised by a high chemical potential. The reaction was studied in a tubular furnace with on-line gas analysis and further characterised in detail by DTA und high-temperature X-ray powder diffraction. The influence of non-stoichiometry, morphology and temperature on the mechanism and kinetics of the water-splitting reaction was determined. (author) 3 figs., tabs., 3 refs.

  18. At What Cost a Carrier?

    Science.gov (United States)

    2013-03-01

    brushed At What Cost a Carrier?M A R C H 2 0 1 3 4 | with interest, consequently pushing to convert the coal supply ship Jupiter into an American aircra...began to pay o!. By 1999 only 4 tons of bombs were needed to accomplish the mission, regardless of the weather at the target. Couple this fact with...there, how many bombs does it drop? | 7 #e &rst fact that needs to be understood in answer- ing these questions is that piloting an aircra" onto the

  19. Hydrogen - A sustainable energy carrier

    Directory of Open Access Journals (Sweden)

    Kasper T. Møller

    2017-02-01

    Full Text Available Hydrogen may play a key role in a future sustainable energy system as a carrier of renewable energy to replace hydrocarbons. This review describes the fundamental physical and chemical properties of hydrogen and basic theories of hydrogen sorption reactions, followed by the emphasis on state-of-the-art of the hydrogen storage properties of selected interstitial metallic hydrides and magnesium hydride, especially for stationary energy storage related utilizations. Finally, new perspectives for utilization of metal hydrides in other applications will be reviewed.

  20. 78 FR 66801 - Motor Carrier Safety Advisory Committee; Charter Renewal

    Science.gov (United States)

    2013-11-06

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee; Charter Renewal AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Announcement of advisory... Committee that provides the Agency with advice and recommendations on motor carrier safety programs...

  1. Robust GPS carrier tracking under ionospheric scintillation

    Science.gov (United States)

    Susi, M.; Andreotti, M.; Aquino, M. H.; Dodson, A.

    2013-12-01

    Small scale irregularities present in the ionosphere can induce fast and unpredictable fluctuations of Radio Frequency (RF) signal phase and amplitude. This phenomenon, known as scintillation, can degrade the performance of a GPS receiver leading to cycle slips, increasing the tracking error and also producing a complete loss of lock. In the most severe scenarios, if the tracking of multiple satellites links is prevented, outages in the GPS service can also occur. In order to render a GPS receiver more robust under scintillation, particular attention should be dedicated to the design of the carrier tracking stage, that is the receiver's part most sensitive to these types of phenomenon. This paper exploits the reconfigurability and flexibility of a GPS software receiver to develop a tracking algorithm that is more robust under ionospheric scintillation. For this purpose, first of all, the scintillation level is monitored in real time. Indeed the carrier phase and the post correlation terms obtained by the PLL (Phase Locked Loop) are used to estimate phi60 and S4 [1], the scintillation indices traditionally used to quantify the level of phase and amplitude scintillations, as well as p and T, the spectral parameters of the fluctuations PSD. The effectiveness of the scintillation parameter computation is confirmed by comparing the values obtained by the software receiver and the ones provided by a commercial scintillation monitoring, i.e. the Septentrio PolarxS receiver [2]. Then the above scintillation parameters and the signal carrier to noise density are exploited to tune the carrier tracking algorithm. In case of very weak signals the FLL (Frequency Locked Loop) scheme is selected in order to maintain the signal lock. Otherwise an adaptive bandwidth Phase Locked Loop (PLL) scheme is adopted. The optimum bandwidth for the specific scintillation scenario is evaluated in real time by exploiting the Conker formula [1] for the tracking jitter estimation. The performance

  2. Silicon ball grid array chip carrier

    Science.gov (United States)

    Palmer, David W.; Gassman, Richard A.; Chu, Dahwey

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  3. Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

    CERN Document Server

    Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

    2016-01-01

    Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. ...

  4. Carrier-dependent magnetic anisotropy of Gd-adsorbed graphene

    Science.gov (United States)

    Lu, Yuan; Zhou, Tie-ge; Shao, Bin; Zuo, Xu; Feng, Min

    2016-05-01

    Using first-principles calculation based on density functional theory, we study the magnetic anisotropy of Gd-adsorbed graphene and its dependence on carrier accumulation. We show that carrier accumulation not only impacts the magnitude of magnetic anisotropy but also switches its sign. Hole accumulation enhances the perpendicular anisotropy up to ˜16 meV per Gd atom, while electron accumulation switches the anisotropy from perpendicular to in-plane direction. Moreover, we find that the first order perturbation of spin-orbit coupling interaction induces a pseudo-gap at Γ for the perpendicular magnetization, which leads to the the anomalous magnetic anisotropy for the neutral composite. Our findings pave the way for magneto-electric materials based on rare-earth-decorated graphene for voltage-controlled spintronics.

  5. Carrier-dependent magnetic anisotropy of Gd-adsorbed graphene

    Directory of Open Access Journals (Sweden)

    Yuan Lu

    2016-05-01

    Full Text Available Using first-principles calculation based on density functional theory, we study the magnetic anisotropy of Gd-adsorbed graphene and its dependence on carrier accumulation. We show that carrier accumulation not only impacts the magnitude of magnetic anisotropy but also switches its sign. Hole accumulation enhances the perpendicular anisotropy up to ∼16 meV per Gd atom, while electron accumulation switches the anisotropy from perpendicular to in-plane direction. Moreover, we find that the first order perturbation of spin-orbit coupling interaction induces a pseudo-gap at Γ for the perpendicular magnetization, which leads to the the anomalous magnetic anisotropy for the neutral composite. Our findings pave the way for magneto-electric materials based on rare-earth-decorated graphene for voltage-controlled spintronics.

  6. Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus

    DEFF Research Database (Denmark)

    Espinosa-Gongora, Carmen; Larsen, Niels; Schonning, Kristian;

    2016-01-01

    pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium...... microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate...

  7. Ultrafast carriers dynamics in filled-skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Liang; Xu, Xianfan, E-mail: xxu@purdue.edu [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Salvador, James R. [Chemical and Materials Systems Laboratory, GM Global R and D, Warren, Michigan 48090 (United States)

    2015-06-08

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4–0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  8. Impact of carriers in oral absorption

    DEFF Research Database (Denmark)

    Gram, Luise Kvisgaard; Rist, Gerda Marie; Lennernäs, Hans

    2009-01-01

    (APP) was not described by carrier kinetics. However, glipizide is affecting exsorption for ES, due to interactions on basolateral carrier. The study confirms that estrone-3-sulfate can be used to characterize anionic carrier kinetics. Furthermore it is suggested that estrone-3-sulfate may be used to identify compounds......Carriers may mediate the permeation across enterocytes for drug substances being organic anions. Carrier mediated permeation for the organic anions estrone-3-sulfate (ES) and glipizide across Caco-2 cells were investigated kinetically, and interactions on involved carriers evaluated. Initial...... uptakes (P(UP)) at apical and basolateral membranes, apparent permeabilities (P(APP)) and corresponding intracellular end-point accumulations (P(EPA)) of radioactive labeled compounds were studied. Possible effects of other anionic compounds were investigated. Apical P(UP) and absorptive P(APP) for ES...

  9. Ultrafast carriers dynamics in filled-skutterudites

    Science.gov (United States)

    Guo, Liang; Xu, Xianfan; Salvador, James R.

    2015-06-01

    Carrier dynamics of filled-skutterudites, an important class of thermoelectric materials, is investigated using ultrafast optical spectroscopy. By tuning the wavelength of the probe laser, charge transfers at different electronic energy levels are interrogated. Analysis based on the Kramers-Kronig relation explains the complex spectroscopy data, which is mainly due to band filling caused by photo-excited carriers and free carrier absorption. The relaxation time of hot carriers is found to be about 0.4-0.6 ps, depending on the electronic energy level, and the characteristic time for carrier-phonon equilibrium is about 0.95 ps. These studies of carrier dynamics, which fundamentally determines the transport properties of thermoelectric material, can provide guidance for the design of materials.

  10. Carriers of the astronomical 2175 ? extinction feature

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, J; Dai, Z; Ernie, R; Browning, N; Graham, G; Weber, P; Smith, J; Hutcheon, I; Ishii, H; Bajt, S; Floss, C; Stadermann, F

    2004-07-20

    The 2175 {angstrom} extinction feature is by far the strongest spectral signature of interstellar dust observed by astronomers. Forty years after its discovery the origin of the feature and the nature of the carrier remain controversial. The feature is enigmatic because although its central wavelength is almost invariant its bandwidth varies strongly from one sightline to another, suggesting multiple carriers or a single carrier with variable properties. Using a monochromated transmission electron microscope and valence electron energy-loss spectroscopy we have detected a 5.7 eV (2175 {angstrom}) feature in submicrometer-sized interstellar grains within interplanetary dust particles (IDPs) collected in the stratosphere. The carriers are organic carbon and amorphous silicates that are abundant and closely associated with one another both in IDPs and in the interstellar medium. Multiple carriers rather than a single carrier may explain the invariant central wavelength and variable bandwidth of the astronomical 2175 {angstrom} feature.

  11. A simple method of calculating the minority-carrier current in heavily doped silicon

    Science.gov (United States)

    Kleefstra, M.

    1985-10-01

    It is shown that the calculation of the one-dimensional minority-carrier current density in heavily doped silicon can be described by two coupled differential equations of the first order. These equations are derived with a minimum of assumptions and approximations and without the explicit use of an electric field. The relevant input parameters to these equations are the product of the equilibrium hole density with the diffusion coefficient and the product of the equilibrium hole density with the reciprocal value of the lifetime. These equations can very easily be solved numerically and the solution gives the minority-carrier density and the current density as a function of space coordinate. It is shown that values of the band gap narrowing cannot be derived from current measurements alone.

  12. New Dimensions of Moving Bed Biofilm Carriers

    OpenAIRE

    Piculell, Maria

    2016-01-01

    The moving bed biofilm reactor (MBBR) is a biological wastewater treatment process in which microorganisms grow as biofilms on suspended carriers. Conventionally, MBBRs are mainly designed and optimized based on the carrier surface area, neglecting the dynamic relationship between carrier design, reactor operation and biofilm characteristics, such as biofilm thickness and the composition of the microbial community. The purpose of this research project was to learn more about the roles of the ...

  13. Carriers by chemical vapor deposition

    Science.gov (United States)

    Mronga, Norbert; Adel, J.; Czech, Erwin

    1990-07-01

    Printed materials are affecting people's lives in a variety of ways and to a constantly increasing extent, both in the private and in the business spheres. In particular, the predicted reduction of printed materials resulting from electronic data processing - the so-called "paperless electronic office" - has not occured, indeed quite the reverse. In recent years electrophotographic reprography has established itself successfully as a competitor to conventional printing processes. In the office a photocopier is now a part of the standard equipment. Because of BASF's traditional intensive involvement with pigments and colored printing inks its interest in new technologies in these areas is especially great. BASF has therefore been engaged in research on carriers for some years now.

  14. Fast dissolution of poorly water soluble drugs from fluidized bed coated nanocomposites: Impact of carrier size.

    Science.gov (United States)

    Azad, Mohammad; Moreno, Jacqueline; Bilgili, Ecevit; Davé, Rajesh

    2016-11-20

    Formation of core-shell nanocomposites of Fenofibrate and Itraconazole, model poorly water soluble drugs, via fluidized bed (FB) coating of their well-stabilized high drug loaded nanosuspensions is investigated. Specifically, the extent of dissolution enhancement, when fine carrier particles (sub-50μm) as opposed to the traditional large carrier particles (>300μm) are used, is examined. This allows testing the hypothesis that greatly increased carrier surface area and more importantly, thinner shell for finer carriers at the same drug loading can significantly increase the dissolution rate when spray-coated nanosuspensions are well-stabilized. Fine sub-50μm lactose (GranuLac(®) 200) carrier particles were made fluidizable via dry coating with nano-silica, enabling decreased cohesion, fluidization and subsequent nanosuspension coating. For both drugs, 30% drug loaded suspensions were prepared via wet-stirred media milling using hydroxypropyl methyl cellulose and sodium dodecyl sulfate as stabilizers. The stabilizer concentrations were varied to affect the milled particle size and prepare a stable nanosuspension. The suspensions were FB coated onto hydrophilic nano-silica (M-5P) dry coated sub-50μm lactose (GranuLac(®) 200) carrier particles or larger carrier particles of median size >300μm (PrismaLac(®)40). The resulting finer composite powders (sub-100μm) based on GranuLac(®) 200 were freely flowing, had high bulk density, and had much faster, immediate dissolution of the poorly water-soluble drugs, in particular for Itraconazole. This is attributed to a much higher specific surface area of the carrier and corresponding thinner coating layer for fine carriers as opposed to those for large carrier particles.

  15. Dynamics of Below-Band-Gap Carrier in Highly Excited GaN

    Institute of Scientific and Technical Information of China (English)

    郭冰; 黄锦圣; 叶志镇; 江红星; 林景瑜

    2003-01-01

    Femtosecond time-resolved reflectivity was used to investigate below-band-gap (3.1 eV) carrier dynamics in a nominally undoped GaN epilayer under high excitation. A 2.5-ps rising process can be observed in the transient trace. This shot rising time results from the hot phonon effects which can cause a delayed energy relaxation of the initial photocarriers toward the band edge. From the density dependence of the carrier dynamics, the Mott density was estimated to be 1.51-1.56 × 1019 cm-3. Below the Mott density, the initial probed carrier dynamics was explained to the effect of acoustic phonon-assisted tunnelling for localized states, where a significant excitation density dependence of the tunnelling probability was observed due to the optically induced bandtail extension to lower energies. Above the Mott density, the measured carrier dynamics reflected the relaxation of an electron-hole plasma, in which a distinct fast decay component of 2.3 ps was observed due to the onset of nonlinear relaxation processes such Auger recombination.

  16. A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson’s equation.Using the numerical calculation method,a novel model of photo-carrier screening effect is presented.Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed.The influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also analyzed.It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage.Besides,the incident light duration has strong impact on the photo-carrier screening effect.

  17. Dynamics of carrier recombination in a semiconductor laser structure

    Energy Technology Data Exchange (ETDEWEB)

    Dzhioev, R. I., E-mail: dzhioev@orient.ioffe.ru; Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  18. Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

    DEFF Research Database (Denmark)

    Dery, H.; Tromborg, Bjarne; Eisenstein, G.

    2003-01-01

    We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared...

  19. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    Science.gov (United States)

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; Moisan, Camille; Larramona, Gerardo; Dennler, Gilles; Handwerg, Martin; Fischer, Saskia F.; Eichberger, Rainer; Unold, Thomas

    2016-11-01

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V-1 s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

  20. Measuring the carrier lifetime by using a quasi-optical millimeter- and THz-wave system

    Science.gov (United States)

    Choe, Mun Seok; Sawant, Ashwini; Lee, Kyu-Sup; Yu, Nan Ei; Choi, EunMi

    2017-02-01

    The existing method for contactless measurement of the photoconductivity decay time is limited in terms of sample selection according to the injection level or doping density. To solve this problem and improve the measurement sensitivity, we developed a quasi-optical photoconductivity decay (QO-PCD) technique based on millimeter- and terahertz-wave technology. A semi-insulating silicon (Si) wafer was used in a proof-of-concept experiment with the proposed QO-PCD system to find the initial excess carrier density and carrier lifetime based on the Drude-Zener model with a single decay function. The initial excess carrier density and carrier lifetime were measured to be 1.5 × 1015 cm-3 and 30.6 μs, respectively, in semi-insulating Si wafer (460 μm thickness). A 2D areal measurement of the decay time of the Si wafer was experimentally obtained. The proposed QO-PCD technique can provide more reliable and sensitive carrier lifetime measurement data for semiconductor wafers, which may impact the fields of photovoltaic solar cells and power electronics.

  1. Providing resilience for carrier ethernet multicast traffic

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang

    2009-01-01

    This paper presents an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we detail how multicast traffic, which is essential for e.g. IPTV can be protected. We present Carrier Ethernet resilience methods for linear and ring networks and show by simulation...

  2. Protection switching for carrier ethernet multicast

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Berger, Michael Stübert

    2010-01-01

    This paper addresses network survivability for IPTV multicast transport in Carrier Ethernet networks. The impact of link failures is investigated and suggestions for intelligent multicast resilience schemes are proposed. In particular, functions of the multicast tree are integrated with the Carrier...

  3. Selection of Carrier Waveforms for PWM Inverter

    Institute of Scientific and Technical Information of China (English)

    陈国呈; 屈克庆; 许春雨; 孙承波

    2003-01-01

    In this paper the influence of different carrier waveforms upon the output characteristics of PWM inverter is described in detail. When a triangular carrier waveform is used in hard-switching PWM inverters, harmonics exist in the neighborhood of the output frequency of the inverter output voltage and current due to the dead time. The triangular carrier waveform used in soft-switching PWM inverter will cause difficulties in controlling resonance-trigger time, higher loss in the resonant circuit, and less utilization of the DC bus voltage. If a sawtooth carrier is used in hard-switching PWM inverter, there will be severe distortion in the current waveform. When sawtooth carriers with alternate positive and negative slopes are used in soft-switching PWM inverters, the resonancetrigger time is easy to control, and distortion in the output voltage and current caused by the dead time will not appear.

  4. The Kinetics of Carrier Transport Inhibition

    DEFF Research Database (Denmark)

    Rosenberg, T.; Wilbrandt, Robert Walter

    1962-01-01

    The kinetical treatment of enzymatic carrier transports as given in previous communications has been extended to conditions of inhibition. Various possible types of inhibitors have been considered differing in the site of attack (enzyme or carrier), in the mode of action (competing...... with the substrate for the enzyme or the carrier or for both, competing with the carrier for the enzyme, or non-competitive) and in the ability of penetrating the membrane. Experiments are reported on the inhibition of glucose and fructose transport across the human red cell membrane by phlorizine, phloretine...... the first order asymmetry severalfold (“second order asymmetry”). It was shown that a substrate competitive mode of action involving competition both for the enzyme and for the enzyme-bound carrier will result in a behaviour resembling the observed “second order asymmetry”. It is felt, therefore...

  5. Modeling of Carrier Dynamics in Electroabsorption Modulators

    DEFF Research Database (Denmark)

    Højfeldt, Sune

    2002-01-01

    and a phenomenological model for the carrier sweep-out dynamics, we investigate all-optical wavelength conversion, all-optical signal regeneration, and all-optical demultiplexing. A detailed drift-diffusion type model for the sweerp-out of photo-excited carriers in electroabsorption modulators is presented. We use...... the model to calclulate absorption spectra and steady-state carrier distributions in different modulator structures. This allows us to investigate a number of important properties of electroabsorption modulators, such as the electroabsorption effect and th saturation properties. We also investigate...... the influence that carrier recapture has on the device properties, and we discuss the recapture process on a more fundamental level. The model is also used to investigate in detail the carrier sweep-out process in electroabsorption modulators. We investigate how the intrinsic-region width, the separate...

  6. Methanol as an energy carrier

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, P.; Grube, T.; Hoehlein, B. (eds.)

    2006-07-01

    For the future, a strongly growing energy demand is expected in the transport sector worldwide. Economically efficient oil production will run through a maximum in the next decade. Higher fuel prices and an environmentally desirable reduction of emissions will increase the pressure for reducing fuel consumption and emissions in road traffic. These criteria show the urgent necessity of structural changes in the fuel market. Due to its advantages concerning industrial-scale production, storage and global availability, methanol has the short- to medium-term potential for gaining increased significance as a substitution product in the energy market. Methanol can be produced both from fossil energy sources and from biomass or waste materials through the process steps of synthesis gas generation with subsequent methanol synthesis. Methanol has the potential to be used in an environmentally friendly manner in gasoline/methanol mixtures for flexible fuel vehicles with internal combustion engines and in diesel engines with pure methanol. Furthermore, it can be used in fuel cell vehicles with on-board hydrogen production in direct methanol fuel cell drives, and in stationary systems for electricity and heat generation as well as for hydrogen production. Finally, in portable applications it serves as an energy carrier for electric power generation. In this book, the processes for the production and use of methanol are presented and evaluated, markets and future options are discussed and issues of safety and environmental impacts are addressed by a team of well-known authors. (orig.)

  7. Charge carrier dynamics in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Strothkaemper, Christian

    2013-06-24

    This work investigates the charge carrier dynamics in three different technological approaches within the class of thin film solar cells: radial heterojunctions, the dye solar cell, and microcrystalline CuInSe{sub 2}, focusing on charge transport and separation at the electrode, and the relaxation of photogenerated charge carriers due to recombination and energy dissipation to the phonon system. This work relies mostly on optical-pump terahertz-probe (OPTP) spectroscopy, followed by transient absorption (TA) and two-photon photoemission (2PPE). The charge separation in ZnO-electrode/In{sub 2}S{sub 3}-absorber core/shell nanorods, which represent a model system of a radial heterojunction, is analyzed by OPTP. It is concluded, that the dynamics in the absorber are determined by multiple trapping, which leads to a dispersive charge transport to the electrode that lasts over hundreds of picoseconds. The high trap density on the order of 10{sup 19}/cm{sup 3} is detrimental for the injection yield, which exhibits a decrease with increasing shell thickness. The heterogeneous electron transfer from a series of model dyes into ZnO proceeds on a time-scale of 200 fs. However, the photoconductivity builds up just on a 2-10 ps timescale, and 2PPE reveals that injected electrons are meanwhile localized spatially and energetically at the interface. It is concluded that the injection proceeds through adsorbate induced interface states. This is an important result because the back reaction from long lived interface states can be expected to be much faster than from bulk states. While the charge transport in stoichiometric CuInSe{sub 2} thin films is indicative of free charge carriers, CuInSe{sub 2} with a solar cell grade composition (Cu-poor) exhibits signs of carrier localization. This detrimental effect is attributed to a high density of charged defects and a high degree of compensation, which together create a spatially fluctuating potential that inhibits charge transport. On

  8. 77 FR 46555 - Motor Carrier Safety Advisory Committee: Public Meeting

    Science.gov (United States)

    2012-08-03

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee: Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of meeting of Motor Carrier... major motor carrier safety provisions of the recently enacted Moving Ahead for Progress in the...

  9. Differential Analysis of the Nasal Microbiome of Pig Carriers or Non-Carriers of Staphylococcus aureus

    DEFF Research Database (Denmark)

    Espinosa-Gongora, Carmen; Larsen, Niels; Schonning, Kristian;

    2016-01-01

    Staphylococcus aureus is presently regarded as an emerging zoonotic agent due to the spread of specific methicillin-resistant S. aureus (MRSA) clones in pig farms. Studying the microbiota can be useful for the identification of bacteria that antagonize such opportunistic veterinary and zoonotic...... pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium...... system. Carriers and non-carriers were selected on the basis of quantitative longitudinal data on S. aureus carriage in 600 pigs sampled at 20 Danish herds included in two previous studies in Denmark. Raw sequences were analysed with the BION meta package and the resulting abundance matrix was analysed...

  10. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  11. Material simulation of charge carrier transport properties of polymer dielectrics

    Science.gov (United States)

    Unge, Mikael; Christen, Thomas; Törnkvist, Christer; ABB Corporate Research Team

    To understand electron and hole transport in solid material requires to know its electronic properties, i.e. the density of states (DOS) and whether the states are spatially localized or delocalized. The states closest to the band edges may be localized, states further away can be delocalized. This transition from localized to delocalized states determines the mobility edge, above the mobility edge the mobility is expected to be high. A real polymer is never perfect; it contains a number of oxidative states, bonding defects and molecular impurities. These imperfections yield electronic states that can appear in the band gap of the polymer, traps. Traps can be shallow, i.e. close to the band edges, from these states the charge carrier easily can jump to a state in the band edge or another shallow state. Other traps can be deep, in these states it is likely that the charge carrier remains and become immobile. All these properties related to the electronic structure of the polymer, including its defects, affects the conductivity of the polymer. Linear scaling Density Functional Theory has been applied to calculate electronic structure of amorphous polyethylene. In particular DOS, trap levels and mobility edges are studied.

  12. Carrier scattering in metals and semiconductors

    CERN Document Server

    Gantmakher, VF

    1987-01-01

    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

  13. Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

    Science.gov (United States)

    Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

    2015-07-01

    An improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy (DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

  14. Low Bone Density

    Science.gov (United States)

    ... Information › Bone Density Exam/Testing › Low Bone Density Low Bone Density Low bone density is when your ... compared to people with normal bone density. Detecting Low Bone Density A bone density test will determine ...

  15. Physician Fee Schedule Carrier Specific Files

    Data.gov (United States)

    U.S. Department of Health & Human Services — The Centers for Medicare and Medicaid Services (CMS) has condensed all 56 Physician Fee Schedule (PFS) carrier specific pricing files into one zip file. It is...

  16. What It Means to be a Carrier

    Science.gov (United States)

    ... Life Planning Daily Living Strategies Genetic Counselor Research Biomarker Research Program News, Reports and Commentaries Previously Funded ... with the premutation are at increased risk for depression. It is therefore recommended that any premutation carrier ...

  17. Simulation of dual transponder carrier ranging measurements

    Institute of Scientific and Technical Information of China (English)

    Xiang-yu ZHAO; Xiao-jun JIN; Zhong-he JIN

    2009-01-01

    The most dominant error source for microwave ranging is the frequency instability of the oscillator that generates the carrier phase signal. The oscillator noise is very difficult to filter due to its extremely low frequency. A dual transponder carrier ranging method can effectively minimize the oscillator noise by combing the reference phase and the to-and-fro measurement phase from the same single oscillator. This method does not require an accurate time tagging system, since it extracts phases on the same satellite. This paper analyzes the dual transponder carrier ranging system by simulation of the phase measurements with comprehensive error models. Both frequency domain and time domain noise transfer characteristics were simulated to compare them with dual one-way ranging. The simulation results in the two domains conformed to each other and demonstrated that a high level of accuracy can also be achieved by use of the dual transponder carrier ranging system, with relatively simple instruments.

  18. Towards 100 gigabit carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2010-01-01

    Ethernet as a transport technology has, up to now, lacked the features such as network layer architecture, customer separation and manageability that carriers require for wide-scale deployment. However, with the advent of PBB-TE and TMPLS, it is now possible to use Ethernet as a transport...... technology, making the use of Ethernet as a convergence layer for Next Generation Networks a distinct possibility. Triple Play services, in particular IPTV, are expected to be a main drivers for carrier Ethernet, however, a number of challenges must be addressed including QoS enabled control plane, enhanced...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  19. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao;

    2009-01-01

    Ethernet as a transport technology has, up to now, lacked the features such as network layer architecture, customer separation and manageability that carriers require for wide-scale deployment. However, with the advent of PBB-TE and T-MPLS, it is now possible to use Ethernet as a transport...... technology, making the use of Ethernet as a convergence layer for Next Generation Networks a distinct possibility. Triple Play services, in particular IPTV, are expected to be a main drivers for carrier Ethernet, however, a number of challenges must be addressed including QoS enabled control plane, enhanced...... OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  20. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10 K and 100 K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10 K and 50 K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  1. Influence of Carrier Transport on Diffraction Efficiency of Steady-State Photocarrier Grating

    Science.gov (United States)

    Sun, Q. M.; Wang, Y. F.; Gao, C. M.; Cui, H.

    2015-06-01

    A two-dimensional theoretical model of a diffractive steady-state photocarrier grating (SSPCG) has been developed. The carrier diffusion equation with a spatially periodic excitation source was solved, and an analytical expression of the carrier density distribution was obtained. Based on the band-filling theory and the Kramers-Kronig relation, the carrier-induced refractive index change of SSPCG was estimated, and the refractive index profile was determined. The diffraction efficiency of the SSPCG was calculated by multilevel rigorous coupled-wave analysis. Simulations were carried out to investigate the influence of the carrier transport properties on the diffraction efficiency of the SSPCG. The results show that a semiconductor material with a longer lifetime and a smaller diffusivity will have a higher diffraction efficiency. The spatial amplitude of the carrier density and the grating strength of the SSPCG are closely related to the grating period. For an InP-based SSPCG, the diffraction efficiency of the transmitted wave reaches its maximum value (25 %) when the grating provides a phase shift. The theoretical analysis and conclusions are helpful for material selection and experimental parameter determination of a diffractive SSPCG.

  2. Evaluating multicast resilience in carrier ethernet

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Wessing, Henrik; Zhang, Jiang;

    2010-01-01

    This paper gives an overview of the Carrier Ethernet technology with specific focus on resilience. In particular, we show how multicast traffic, which is essential for IPTV can be protected. We detail the ackground for resilience mechanisms and their control and e present Carrier Ethernet...... resilience methods for linear nd ring networks. By simulation we show that the vailability of a multicast connection can be significantly increased by applying protection methods....

  3. Hiding secret data into a carrier image

    OpenAIRE

    Ovidiu COSMA

    2012-01-01

    The object of steganography is embedding hidden information in an appropriate multimedia carrier, e.g., image, audio, or video. There are several known methods of solving this problem, which operate either in the space domain or in the frequency domain, and are distinguished by the following characteristics: payload, robustness and strength. The payload is the amount of secret data that can be embedded in the carrier without inducing suspicious artefacts, robustness indicates the degree in wh...

  4. Minority carrier lifetime in indium phosphide

    Science.gov (United States)

    Jenkins, Phillip; Landis, Geoffrey A.; Weinberg, Irving; Kneisel, Keith

    1991-01-01

    Transient photoluminescence is used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p- and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material.

  5. Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Narducci, Dario, E-mail: dario.narducci@unimib.it [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Selezneva, Ekaterina [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Cerofolini, Gianfranco [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Frabboni, Stefano; Ottaviani, Giampiero [Department of Physics, University of Modena and Reggio Emilia, via Campi 213, 41100 Modena (Italy)

    2012-09-15

    Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride. - Graphical abstract: In heavily doped semiconductors potential barriers may lead to both carrier energy filtering and localization. This may lead to an enhancement of the thermoelectric properties of the material, resulting in an unexpected increase of the power factor with the doping level. Highlights: Black-Right-Pointing-Pointer Potential barriers are shown to lead to carrier localization in thermoelectric materials. Black-Right-Pointing-Pointer Evidence is put forward of the formation of a mobility edge. Black-Right-Pointing-Pointer Energy filtering and localization may explain the enhancement of power factor in degenerate semiconductors.

  6. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R.; Myers, Samuel Maxwell,

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  7. Carrier induced epitopic suppression of antibody responses induced by virus-like particles is a dynamic phenomenon caused by carrier-specific antibodies.

    Science.gov (United States)

    Jegerlehner, Andrea; Wiesel, Melanie; Dietmeier, Klaus; Zabel, Franziska; Gatto, Dominique; Saudan, Philippe; Bachmann, Martin F

    2010-07-26

    Pre-existing immunity against vaccine carrier proteins has been reported to inhibit the immune response against antigens conjugated to the same carrier by a process termed carrier induced epitopic suppression (CIES). Hence understanding the phenomenon of CIES is of major importance for the development of conjugate vaccines. Virus-like particles (VLPs) are a novel class of potent immunological carriers which have been successfully used to enhance the antibody response to virtually any conjugated antigen. In the present study we investigated the impact of a pre-existing VLP-specific immune response on the development of antibody responses against a conjugated model peptide after primary, secondary and tertiary immunization. Although VLP-specific immune responses led to reduced peptide-specific antibody titers, we showed that CIES against peptide-VLP conjugates could be overcome by high coupling densities, repeated injections and/or higher doses of conjugate vaccine. Furthermore we dissected VLP-specific immunity by adoptively transferring VLP-specific antibodies, B-cells or T(helper) cells separately into naïve mice and found that the observed CIES against peptide-VLP conjugates was mainly mediated by carrier-specific antibodies.

  8. Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene.

    Science.gov (United States)

    Sierra, Juan F; Neumann, Ingmar; Costache, Marius V; Valenzuela, Sergio O

    2015-06-10

    We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage V(NL) across the remaining (detector) leads. Due to the nonlocal character of the measurement, V(NL) is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and V(NL), V(NL) ∼ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying V(NL) as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.

  9. Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene

    Science.gov (United States)

    Sierra, Juan F.; Neumann, Ingmar; Costache, Marius V.; Valenzuela, Sergio O.

    2015-06-01

    We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonlocal character of the measurement, VNL is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying VNL as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.

  10. Radio Science Measurements with Suppressed Carrier

    Science.gov (United States)

    Asmar, Sami; Divsalar, Dariush; Oudrhiri, Kamal

    2013-01-01

    Radio Science started when it became apparent with early Solar missions that occultations by planetary atmospheres would affect the quality of radio communications. Since then the atmospheric properties and other aspects of planetary science, solar science, and fundamental physics were studied by scientists. Radio Science data was always extracted from a received pure residual carrier (without data modulation). For some missions, it is very desirable to obtain Radio Science data from a suppressed carrier modulation. In this paper we propose a method to extract Radio Science data when a coded suppressed carrier modulation is used in deep space communications. Type of modulation can be BPSK, QPSK, OQPSK, MPSK or even GMSK. However we concentrate mostly on BPSK modulation. The proposed method for suppressed carrier simply tries to wipe out data that acts as an interference for Radio Science measurements. In order to measure the estimation errors in amplitude and phase of the Radio Science data we use Cramer-Rao bound (CRB). The CRB for the suppressed carrier modulation with non-ideal data wiping is then compared with residual carrier modulation under the same noise condition. The method of derivation of CRB for non-ideal data wiping is an innovative method that presented here. Some numerical results are provided for coded system.

  11. Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Titova, Lyubov V.; Cocker, Tyler L.; Xu, Sijia; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Hegmann, Frank A.

    2016-10-01

    We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at temperatures ranging from 335 °C to 572 °C. By controlling the growth temperature, thin silicon films ranging from completely amorphous to polycrystalline with minimal amorphous phase can be achieved. Film morphology, in turn, determines its photoconductive properties: in the amorphous phase, carriers are trapped in bandtail states on sub-picosecond time scales, while the carriers excited in crystalline grains remain free for tens of picoseconds. We also find that in polycrystalline silicon the photoexcited carrier mobility is carrier-density-dependent, with higher carrier densities mitigating the effects of grain boundaries on inter-grain transport. In a film grown at the highest temperature of 572 °C, the morphology changes along the growth direction from polycrystalline with needles of single crystals in the bulk of the film to small crystallites interspersed with amorphous silicon at the top of the film. Depth profiling using different excitation wavelengths shows corresponding differences in the photoconductivity: the photoexcited carrier lifetime and mobility are higher in the first 100-150 nm from the substrate, suggesting that thinner, low-temperature grown polycrystalline silicon films are preferable for photovoltaic applications.

  12. Discovery of superconductivity in KTaO₃ by electrostatic carrier doping.

    Science.gov (United States)

    Ueno, K; Nakamura, S; Shimotani, H; Yuan, H T; Kimura, N; Nojima, T; Aoki, H; Iwasa, Y; Kawasaki, M

    2011-05-22

    Superconductivity at interfaces has been investigated since the first demonstration of electric-field-tunable superconductivity in ultrathin films in 1960(1). So far, research on interface superconductivity has focused on materials that are known to be superconductors in bulk. Here, we show that electrostatic carrier doping can induce superconductivity in KTaO(3), a material in which superconductivity has not been observed before. Taking advantage of the large capacitance of the self-organized electric double layer that forms at the interface between an ionic liquid and KTaO(3) (ref. 12), we achieve a charge carrier density that is an order of magnitude larger than the density that can be achieved with conventional chemical doping. Superconductivity emerges in KTaO(3) at 50 mK for two-dimensional carrier densities in the range 2.3 × 10(14) to 3.7 × 10(14) cm(-2). The present result clearly shows that electrostatic carrier doping can lead to new states of matter at nanoscale interfaces.

  13. Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

    Science.gov (United States)

    Li, Jing; Niquet, Yann-Michel; Delerue, Christophe

    2016-06-01

    We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the current becomes spin polarized and the mean free path rises from 10 nm to micrometers. In the ferromagnetic state, the current flows through one majority-spin channel which is ballistic over micrometers and several minority-spin channels with mean free paths as low as 1 nm. These features predicted in technology-relevant conditions could be nicely exploited in spintronic devices.

  14. Performance of Uplink Carrier Aggregation in LTE-Advanced Systems

    DEFF Research Database (Denmark)

    Wang, Hua; Rosa, Claudio; Pedersen, Klaus

    2010-01-01

    Carrier aggregation (CA) has been proposed to aggregate two or more component carriers (CCs) to support a much wider transmission bandwidth for LTE-Advanced systems. With carrier aggregation, it is possible to schedule a user equipment (UE) on multiple component carriers simultaneously. In this p...

  15. 47 CFR 64.1140 - Carrier liability for slamming.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Carrier liability for slamming. 64.1140 Section 64.1140 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES... Providers § 64.1140 Carrier liability for slamming. (a) Carrier Liability for Charges. Any...

  16. 76 FR 32390 - Motor Carrier Safety Advisory Committee Public Meeting

    Science.gov (United States)

    2011-06-06

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Public Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Motor Carrier Safety Advisory... MCSAC will complete action on Task 11-01, regarding Patterns of Safety Violations by Motor...

  17. A novel liquid organic hydrogen carrier system based on catalytic peptide formation and hydrogenation.

    Science.gov (United States)

    Hu, Peng; Fogler, Eran; Diskin-Posner, Yael; Iron, Mark A; Milstein, David

    2015-04-17

    Hydrogen is an efficient green fuel, but its low energy density when stored under high pressure or cryogenically, and safety issues, presents significant disadvantages; hence finding efficient and safe hydrogen carriers is a major challenge. Of special interest are liquid organic hydrogen carriers (LOHCs), which can be readily loaded and unloaded with considerable amounts of hydrogen. However, disadvantages include high hydrogen pressure requirements, high reaction temperatures for both hydrogenation and dehydrogenation steps, which require different catalysts, and high LOHC cost. Here we present a readily reversible LOHC system based on catalytic peptide formation and hydrogenation, using an inexpensive, safe and abundant organic compound with high potential capacity to store and release hydrogen, applying the same catalyst for loading and unloading hydrogen under relatively mild conditions. Mechanistic insight of the catalytic reaction is provided. We believe that these findings may lead to the development of an inexpensive, safe and clean liquid hydrogen carrier system.

  18. Hot Carrier extraction with plasmonic broadband absorbers

    CERN Document Server

    Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J; Mulvaney, Paul; Gomez, Daniel E

    2016-01-01

    Hot charge carrier extraction from metallic nanostructures is a very promising approach for applications in photo-catalysis, photovoltaics and photodetection. One limitation is that many metallic nanostructures support a single plasmon resonance thus restricting the light-to-charge-carrier activity to a spectral band. Here we demonstrate that a monolayer of plasmonic nanoparticles can be assembled on a multi-stack layered configuration to achieve broad-band, near-unit light absorption, which is spatially localised on the nanoparticle layer. We show that this enhanced light absorbance leads to $\\sim$ 40-fold increases in the photon-to-electron conversion efficiency by the plasmonic nanostructures. We developed a model that successfully captures the essential physics of the plasmonic hot-electron charge generation and separation in these structures. This model also allowed us to establish that efficient hot carrier extraction is limited to spectral regions where the photons possessing energies higher than the S...

  19. Development of radioisotope labeled polymeric carriers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung Jin; Jeong, Jea Min; Hwang, Hyun Jeong [Ewha Womans University, Seoul (Korea)

    2000-04-01

    This research was performed with the aim of developing polymeric radioisotope or drug carriers for obtaining efficient diagnostic therapeutic efficacy. As polymers, polyethylene oxides, polylactides, polycaprolactone were chosen to prepare the devices including micelle system, microemulsion, nanospheres. In addition, anticancer drug loaded polylactide microparticulates were fabricated as a regional chemotherapeutics for the treatment of cancer. Technetium or radioactive iodine was labeled to the polymeric carriers via ligands such as DTPA and HPP, respectively. Labeling efficiency was above 90% and stable enough up to 24 hours. Moreover, injected polymer carriers demonstrated higher blood maintenance and bone uptake than Tin colloid, a control. These results suggested that radioisotope carrying polymeric particulate are promising tools for diagnosing blood vessels or bones. Besides, anticancer drug loaded particulates demonstrated appropriate maintenance of therapeutic concentration and localization. Therefore it was proposed that this therapeutic system may be potential as a cancer therapy modality. 20 refs., 24 figs.,5 tabs. (Author)

  20. Hiding secret data into a carrier image

    Directory of Open Access Journals (Sweden)

    Ovidiu COSMA

    2012-06-01

    Full Text Available The object of steganography is embedding hidden information in an appropriate multimedia carrier, e.g., image, audio, or video. There are several known methods of solving this problem, which operate either in the space domain or in the frequency domain, and are distinguished by the following characteristics: payload, robustness and strength. The payload is the amount of secret data that can be embedded in the carrier without inducing suspicious artefacts, robustness indicates the degree in which the secret data is affected by the normal processing of the carrier e.g., compression, and the strength indicate how easy the presence of hidden data can be detected by steganalysis techniques. This paper presents a new method of hiding secret data into a digital image compressed by a technique based on the Discrete Wavelet Transform (DWT [2] and the Set Partitioning In Hierarchical Trees (SPIHT subband coding algorithm [6]. The proposed method admits huge payloads and has considerable strength.

  1. [Therapy of hepatitis B virus carriers].

    Science.gov (United States)

    Bereza, N M; Petiĭ, S I

    1986-01-01

    Examination of 200 gastroenterological patients with a suspected chronic diffuse liver disease has demonstrated that only in 18.9% of the patients with chronic hepatitis, the disease was induced by the virus. Based on the experience gained with the treatment of 7 patients with chronic hepatitis B it is concluded that sanitation may be performed with levamisole. However, the data obtained in the course of the 5-year observation over sanitation of HBsAg carriers (25 subjects) do not provide any convincing evidence in favour of levamisole sanitation. The authors hold that at the blood transfusion stations the prophylaxis of serum hepatitis falls short of ideal. Selection of the donors according to CCIE does not give any guarantee against the viral hepatitis B carrier state. Like patients with viral hepatitis B, the HBsAg carriers badly need active prophylactic-and-treatment medical examination with the use of the antiviral agents.

  2. Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids

    KAUST Repository

    Zhitomirsky, David

    2013-06-25

    Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.

  3. Hot-carrier effects in MOS devices

    CERN Document Server

    Takeda, Eiji; Miura-Hamada, Akemi

    1995-01-01

    The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work

  4. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    Science.gov (United States)

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  5. Biogenesis of the mitochondrial phosphate carrier

    OpenAIRE

    Zara, Vincenzo; Rassow, Joachim; Wachter, Elmar; Tropschug, Maximilian; Palmieri, Ferdinando; Neupert, Walter; Pfanner, Nikolaus

    1991-01-01

    The mitochondrial phosphate carrier (PiC) is a member of the family of inner-membrane carrier proteins which are generally synthesized without a cleavable presequence. Surprisingly, the cDNA sequences of bovine and rat PiC suggested the existence of an amino-terminal extension sequence in the precursor of PiC. By expressing PiC in vitro, we found that PiC is indeed synthesized as a larger precursor. This precursor was imported and proteolytically processed by mitochondria, whereby the correct...

  6. Spatially dispersive dynamical response of hot carriers in doped graphene

    Science.gov (United States)

    Kukhtaruk, S. M.; Kochelap, V. A.; Sokolov, V. N.; Kim, K. W.

    2016-05-01

    We study theoretically wave-vector and frequency dispersion of the complex dynamic conductivity tensor (DCT), σlm(k , ω), of doped monolayer graphene under a strong dc electric field. For a general analysis, we consider the weak ac field of arbitrary configuration given by two independent vectors, the ac field polarization and the wave vector k. The high-field transport and linear response to the ac field are described on the base of the Boltzmann kinetic equation. We show that the real part of DCT, calculated in the collisionless regime, is not zero due to dissipation of the ac wave, whose energy is absorbed by the resonant Dirac quasiparticles effectively interacting with the wave. The role of the kinematic resonance at ω =vF | k | (vF is the Fermi velocity) is studied in detail taking into account deviation from the linear energy spectrum and screening by the charge carriers. The isopower-density curves and distributions of angle between the ac current density and field vectors are presented as a map which provides clear graphic representation of the DCT anisotropy. Also, the map shows certain ac field configurations corresponding to a negative power density, thereby it indicates regions of terahertz frequency for possible electrical (drift) instability in the graphene system.

  7. Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots

    DEFF Research Database (Denmark)

    Uskov, Alexander V; Magnúsdóttir, Ingibjörg; Tromborg, Bjarne;

    2001-01-01

    Mechanisms of pure dephasing in quantum dots due to Coulomb correlations and the dynamics of carrier capture and emission are suggested, and a phenomenological model for the dephasing is developed. It is shown that, if the rates of these capture and emission processes are sufficiently high...

  8. Spin incoherent transport in density-modulated quantum wires

    OpenAIRE

    K.M. Liu; Lin, H. I.; Umansky, V.; S. Y. Hsu

    2009-01-01

    Density, temperature and magnetic field dependences on electron transport in a quantum wire were studied. Decrease of carrier density gives a negative conductance correction on the first plateau at low temperatures. The prominent and mysterious "0.7 structure" is more clearly resolved at low densities. The thermal behavior of the conductance follows the predictions of the spin-incoherent transport. The 0.7 structure at a low density drops to $e^2/h$ in a smaller in-plane magnetic field. The f...

  9. Carrier mobility, band tails and defects in microcrystalline silicon

    Science.gov (United States)

    Reynolds, Steve

    2010-11-01

    The development of microcrystalline silicon thin films and devices is briefly reviewed. Transport mechanisms, and the attendant key parameters of carrier mobility, band-tail width and defect density, are linked to film structure and composition. In particular we discuss the wide (but systematic) variations in time-of-flight mobility and its unusual field-dependence. While microcrystalline silicon remains an inferior semiconductor to single-crystal silicon, we propose, and support by means of a computer model, that present device-grade material may be of sufficient quality to justify re-examining whether useful thin-film bipolar devices might be developed. These could find application as more sensitive photo-detectors, and as current drivers in organic LED displays and logic circuits.

  10. Free Carrier Distribution Criterion in Quantum Dot Lasers

    Directory of Open Access Journals (Sweden)

    HIFSA SHAHID

    2016-07-01

    Full Text Available The spontaneous emission spectra of a 1.28?m InAs/GaAs QD (Quantum Dot Fabry-Perot laser device has been measured under continuous wave operation at a fixed junction temperature of 300K. At low carrier densities, empirically observed static peak wavelength position and a fixed spectral shape of the spontaneous emission spectra are indicative of the random-like population distribution rather than a global Fermi level in the system. A theoretical model based on the Monte-Carlo method has been shown to have good agreement with the empirical results. In addition the evolutions of spontaneous emission spectral shapes are also explained in terms of many body effects.

  11. The Photophysics of the Carrier of Extended Red Emission

    CERN Document Server

    Smith, T L; Smith, Tracy L.; Witt, Adolf N.

    2001-01-01

    Interstellar dust contains a component which reveals its presence by emitting a broad, unstructured band of light in the 540 to 950 nm wavelength range, referred to as Extended Red Emission (ERE). The presence of interstellar dust and ultraviolet photons are two necessary conditions for ERE to occur. This is the basis for suggestions which attribute ERE to an interstellar dust component capable of photoluminescence. In this study, we have collected all published ERE observations with absolute-calibrated spectra for interstellar environments, where the density of ultraviolet photons can be estimated reliably. In each case, we determined the band-integrated ERE intensity, the wavelength of peak emission in the ERE band, and the efficiency with which absorbed ultraviolet photons are contributing to the ERE. The data show that radiation is not only driving the ERE, as expected for a photoluminescence process, but is modifying the ERE carrier as manifested by a systematic increase in the ERE band's peak wavelength...

  12. Femtosecond-scale switching based on excited free-carriers

    CERN Document Server

    Sivan, Y; Yuce, E; Mosk, A P

    2015-01-01

    We describe novel optical switching schemes operating at femtosecond time scales by employing free carrier (FC) excitation. Such unprecedented switching times are made possible by spatially patterning the density of the excited FCs. In the first realization, we rely on diffusion, i.e., on the nonlocality of the FC nonlinear response of the semiconductor, to erase the initial FC pattern and, thereby, eliminate the reflectivity of the system. In the second realization, we erase the FC pattern by launching a second pump pulse at a controlled delay. We discuss the advantages and limitations of the proposed approaches and demonstrate their potential applicability for switching ultrashort pulses propagating in silicon waveguides. We show switching efficiencies of up to $50\\%$ for $100$ fs pump pulses, which is an unusually high level of efficiency for such a short interaction time, a result of the use of the strong FC nonlinearity. Due to limitations of saturation and pattern effects, these schemes can be employed ...

  13. Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Madni, I.; Umana-Membreno, G. A.; Lei, W.; Gu, R.; Antoszewski, J.; Faraone, L. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Western Australia 6009 (Australia)

    2015-11-02

    The minority carrier lifetime in molecular beam epitaxy grown layers of iodine-doped Hg{sub 1−x}Cd{sub x}Te (x ∼ 0.3) on CdZnTe substrates has been studied. The samples demonstrated extrinsic donor behavior for carrier concentrations in the range from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3} without any post-growth annealing. At a temperature of 77 K, the electron mobility was found to vary from 10{sup 4} cm{sup 2}/V s to 7 × 10{sup 3} cm{sup 2}/V s and minority carrier lifetime from 1.6 μs to 790 ns, respectively, as the carrier concentration was increased from 2 × 10{sup 16} cm{sup −3} to 6 × 10{sup 17} cm{sup −3}. The diffusion of iodine is much lower than that of indium and hence a better alternative in heterostructures such as nBn devices. The influence of carrier concentration and temperature on the minority carrier lifetime was studied in order to characterize the carrier recombination mechanisms. Measured lifetimes were also analyzed and compared with the theoretical models of the various recombination processes occurring in these materials, indicating that Auger-1 recombination was predominant at higher doping levels. An increase in deep-level generation-recombination centers was observed with increasing doping level, which suggests that the increase in deep-level trap density is associated with the incorporation of higher concentrations of iodine into the HgCdTe.

  14. Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

    Institute of Scientific and Technical Information of China (English)

    ZHOU QingLi; SHI YuLei; LI Tong; JIN Bin; ZHAO DongMei; ZHANG CunLin

    2009-01-01

    The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (pSi) have been investigated by using femtoaecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly smaller than that of n-Si, due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power, the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model, showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

  15. Study of LO-phonon decay in semiconductors for hot carrier solar cell

    Science.gov (United States)

    Levard, Hugo; Vidal, Julien; Laribi, Sana; Guillemoles, Jean-François

    2014-03-01

    Knowledge of phonon decay is of crucial importance when studying basic properties of semiconductors, since they are closely related to Raman linewidth and non-equilibrium-hot-carriers cooling. The latter indeed cools down to the bottom of the conduction band within a picosecond range because of electron-phonon interaction. The eventual emitted hot phonons then decay in few picoseconds. The hot carriers cooling can be slowed down by considering the decay rate dependence of phonon on conservation rules, whose tuning may reduce the allowed two-phonon final states density. This is of direct interest for the third generation photovoltaic devices that are Hot Carrier Solar Cells (HCSC), in which the photoexcited carriers are extracted at an energy higher than thermal equilibrium. One of the HCSC main challenges then is to find an absorber material in which the hot phonons has a relaxation time longer than the carriers cooling time, so that we can expect the electron to ``reabsorb'' a phonon, slowing down the electronic cooling. HCSC yield is ultimately limited by LO phonon decay, though. In this work, we present theoretical results obtained from ab initio calculations of phonon lifetime in III-V and IV-IV semiconductors through a three-phonon process. Common approximations in the literature are questioned. In particular, we show that the usual ``zone-center approximation'' is not valid in some specific semiconductors. The analysis allows to correctly investigate phonon decay mechanisms in bulk and nanostructured materials.

  16. Carrier dynamics and terahertz photoconductivity of doped silicon measured by femtosecond pump-terahertz probe spectroscopy

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The carrier dynamics and terahertz photoconductivity in the n-type silicon (n-Si) as well as in the p-type Silicon (p-Si) have been investigated by using femtosecond pump-terahertz probe technique. The measurements show that the relative change of terahertz transmission of p-Si at low pump power is slightly smaller than that of n-Si,due to the lower carrier density induced by the recombination of original holes in the p-type material and the photogenerated electrons. At high pump power,the bigger change of terahertz transmission of p-Si originates from the greater mobility of the carriers compared to n-Si. The transient photoconductivities are calculated and fit well with the Drude-Smith model,showing that the mobility of the photogenerated carriers decreases with the increasing pump power. The obtained results indicate that femtosecond pump-terahertz probe technique is a promising method to investigate the carrier dynamics of semiconductors.

  17. Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

    Science.gov (United States)

    Li, Jing; Lampin, Evelyne; Delerue, Christophe; Niquet, Yann-Michel

    2016-11-01

    We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon bands over the whole first Brillouin zone and accounts for all possible carrier-phonon scattering processes. It can also handle one-dimensional (wires) and three-dimensional (bulk) structures and therefore provides a consistent description of the effects of dimensionality on the phonon-limited mobilities. We first discuss the dependence of the electron and hole mobilities on the film thickness and carrier density. The mobility tends to decrease with decreasing film thickness and increasing carrier density, as the structural and electric confinement enhances the electron-phonon interactions. We then compare hydrogen-passivated and oxidized films in order to understand the impact of surface passivation on the mobility and discuss the transition from nanowires to films and bulk. Finally, we compare the semi-classical TB mobilities with quantum Non-Equilibrium Green's Function calculations based on k ṡ p band structures and on deformation potentials for the electron-phonon interactions (KP-NEGF). The TB mobilities show a stronger dependence on carrier density than the KP-NEGF mobilities, yet weaker than the experimental data on Fully Depleted-Silicon-on-Insulator devices. We discuss the implications of these results on the nature of the apparent increase of the electron-phonon deformation potentials in silicon thin films.

  18. Advanced two-way satellite frequency transfer by carrier-phase and carrier-frequency measurements

    Science.gov (United States)

    Fujieda, Miho; Gotoh, Tadahiro; Amagai, Jun

    2016-06-01

    Carrier-phase measurement is one of the ways to improve the measurement resolution of two-way satellite frequency transfer. We introduce two possible methods for carrier-phase measurement: direct carrier-phase detection identified by Two-Way Carrier-Phase (TWCP) and the use of carrier-frequency information identified by Two-Way Carrier Frequency (TWCF). We performed the former using an arbitrary waveform generator and an analog-to-digital sampler and the latter using a conventional modem. The TWCF measurement using the modem had a resolution of 10-13 and the result agreed with that obtained by GPS carrier-phase frequency transfer in a 1500 km baseline. The measurement accuracy may have been limited by the poor frequency resolution of the modem; however, the TWCF measurement was able to improve the stability of conventional two-way satellite frequency transfer. Additionally, we show that the TWCP measurement system has the potential to achieve a frequency stability of 10-17.

  19. Role of free carriers excited by ultrafast Bessel beams for submicron structuring applications

    Science.gov (United States)

    Velpula, Praveen Kumar; Bhuyan, Manoj Kumar; Mauclair, Cyril; Colombier, Jean-Philippe; Stoian, Razvan

    2014-07-01

    Ultrafast Bessel beams are ideal sources for high aspect ratio submicron structuring applications because of their nondiffracting nature and higher stability in nonlinear propagation. We report here on the interaction of ultrafast Bessel beams at various laser energies and pulse durations with transparent materials (fused silica) and define their impact on photoinscription regimes, i.e., formation of positive and negative refractive index structures. The laser pulse duration was observed to be key in deciding the type of the structures via excitation efficiency. To understand the relevant mechanisms for forming these different structures, the free carrier behavior as a function of laser pulse duration and energy was studied by capturing instantaneous excitation profiles using time-resolved microscopy. Time-resolved imaging and simulation studies reveal that low carrier densities are generated for ultrashort pulses, leading to soft positive index alterations via presumably nonthermally induced structural transitions involving defects. On the other hand, the high free carrier density generation in the case of longer pulse durations leads to hydrodynamic expansion, resulting in high aspect ratio submicron-size wide voids. Delayed ionization, carrier defocusing, and lower nonlinear effects are responsible for the confinement of energy, resulting in efficient energy deposition on-axis.

  20. Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

    2015-12-14

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  1. Carrier Aggregation for LTE-Advanced

    DEFF Research Database (Denmark)

    Pedersen, Klaus Ingemann; Frederiksen, Frank; Rosa, Claudio

    2011-01-01

    Carrier aggregation (CA) is one of the key features for LTE-Advanced. By means of CA, users gain access to a total bandwidth of up to 100 MHz in order to meet the IMT-Advanced requirements. The system bandwidth may be contiguous, or composed of several non-contiguous bandwidth chunks, which are a...

  2. Roch Carrier, Popular Language, and Joual.

    Science.gov (United States)

    Walkley, Max

    1997-01-01

    Discusses the language problems in Roch Carrier's French Canadian short stories, as well as his concise, nostalgic writing style. The article gives examples of vocabulary in his characters' dialogue; reviews the evolvement of French in Quebec and the question of "joual," in particular; and focuses on expressions posing difficulty for…

  3. A NEW SYNTHETIC FUNCTIONALIZED ANTIGEN CARRIER

    NARCIS (Netherlands)

    DRIJFHOUT, JW; BLOEMHOFF, W

    1991-01-01

    A new synthetic functionalized antigen carrier is described. It consists of a core of seven branched lysine residues, of which each of the four N-terminal lysine residues contains two N-(S-acetylmercaptoacetyl)-glutamyl residues. After removal of the protecting S-acetyl groups affording eight thiol

  4. Microemulsions as Potential Carriers of Nisin

    DEFF Research Database (Denmark)

    Chatzidaki, Maria D; Papadimitriou, Konstantinos; Alexandraki, Voula

    2016-01-01

    Water-in-oil (W/O) microemulsions based on either refined olive oil (ROO) or sunflower oil (SO), distilled monoglycerides (DMG), and ethanol were used as nisin carriers in order to ensure its effectiveness as a biopreservative. This work presents experimental evidence on the effects of ethanol...

  5. Polyester Dendrimers: Smart Carriers for Drug Delivery

    Directory of Open Access Journals (Sweden)

    Jean–d’Amour K. Twibanire

    2014-01-01

    Full Text Available Polyester dendrimers have been shown to be outstanding candidates for biomedical applications. Compared to traditional polymeric drug vehicles, these biodegradable dendrimers show excellent advantages especially as drug delivery systems because they are non-toxic. Here, advances on polyester dendrimers as smart carriers for drug delivery applications have been surveyed. Both covalent and non-covalent incorporation of drugs are discussed.

  6. Dextran: A promising macromolecular drug carrier

    Directory of Open Access Journals (Sweden)

    Dhaneshwar Suneela

    2006-01-01

    Full Text Available Over the past three decades intensive efforts have been made to design novel systems able to deliver the drug more effectively to the target site. The ongoing intense search for novel and innovative drug delivery systems is predominantly a consequence of the well-established fact that the conventional dosage forms are not sufficiently effective in conveying the drug compound to its site of action and once in the target area, in releasing the active agent over a desired period of time. The potential use of macromolecular prodrugs as a means of achieving targeted drug delivery has attracted considerable interest in recent years. Macromolecules such as antibodies, lipoproteins, lectins, proteins, polypeptides, polysaccharides, natural as well as synthetic polymers offer potential applicabilities as high molecular weight carriers for various therapeutically active compounds. Dextrans serve as one of the most promising macromolecular carrier candidates for a wide variety of therapeutic agents due to their excellent physico-chemical properties and physiological acceptance. The present contribution attempts to review various features of the dextran carrier like its source, structural and physico-chemical characteristics, pharmacokinetic fate and its applications as macromolecular carrier with special emphasis on dextran prodrugs.

  7. A universal thermal conductance of charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Greiner, A.; Reggiani, L. [Lecce, Univ. (Italy). Ist. Nazionale di Fisica della Materia. Dipt. di Scienza dei Materiali; Kuhn, T. [Munster, Westfalische Wilhelms-Univ. (Germany). Inst. fur Theoretische Physik II; Varani, L. [Montpellier, Univ. Montpellier II (France). Centre d`Electronique et de Micro-optoelectronique

    1996-12-01

    A universal thermal conductance of charge carriers K = 2{pi}{sup 2}k{sub B}{sup 2}T / (3h) is rigorously derived within a correlation-function formalism. Similar to the case of the universal electrical conductance G = 2e{sup 2} / h this result pertains to one-dimensional, ballistic, and degenerate conditions for non-interacting particles.

  8. Itaconic acid carrier ampholytes for isoelectric focusing.

    Science.gov (United States)

    Brenna, O

    1977-04-11

    Commercial carrier ampholytes, obtained by coupling polyethylene polyamines to acrylic acid, exhibit a conductivity minimum in the pH range 5.5-6.5 owing to the lack of appropriate pK values of the polyamine in this pH region. By replacing acrylic with itaconic acid, it has been possible to effect substantial improvements in the pH range 5.5-6.5 as itaconic acid has a pK2 value of 5.45. Upon coupling, the pK of the gramma-carboxyl group remains virtually unaltered. With itoconic acid carrier ampholytes it has been possible to improve the conductivity in the pH range 5.5-6.5 by as much as 400% compared with conventional carrier ampholytes. It is suggected that the commercial products should be supplemented with itaconic acid carrier ampholytes in order to obtain a more uniform conductivity and buffering capacity in the pH range 3-10.

  9. 7 CFR 35.4 - Carrier.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Carrier. 35.4 Section 35.4 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE COMMODITY STANDARDS AND STANDARD CONTAINER REGULATIONS EXPORT...

  10. Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations

    Science.gov (United States)

    Guo, H. C.; Zhang, X. H.; Liu, W.; Yong, A. M.; Tang, S. H.

    2009-09-01

    Using terahertz time-domain spectroscopy, we measured the complex conductivity and dielectric function of n-type GaN with various carrier concentrations on sapphire substrate. The measured complex conductivity, which is due to the free carriers, is well fitted by simple Drude model. The contribution from the lattice vibration to the complex dielectric function increases with the decrease in free carrier concentration. A better fitting of the frequency-dependent complex dielectric response was obtained by considering both of the Drude and the classical damped oscillator model.

  11. Compositional dependence of charge carrier transport in kesterite Cu2ZnSnS4 solar cells

    Science.gov (United States)

    Just, Justus; Nichterwitz, Melanie; Lützenkirchen-Hecht, Dirk; Frahm, Ronald; Unold, Thomas

    2016-12-01

    Cu2ZnSnS4 solar cells deposited by thermal co-evaporation have been characterized structurally and electronically to determine the dependence of the electronic properties on the elemental composition of the kesterite phase, which can significantly deviate from the total sample composition. To this end, the kesterite phase content and composition were determined by a combination of X-ray fluorescence and X-ray absorption measurements. The electronic properties, such as carrier density and minority carrier diffusion length, were determined by electron beam induced current measurements and capacitance-voltage profiling. The charge-carrier transport properties are found to strongly depend on the Cu/(Sn+Zn) ratio of the kesterite phase. For the Cu-poor sample, a minority carrier diffusion length of 270 nm and a total collection length of approx. 500 nm are deduced, indicating that current collection should not be an issue in thin devices.

  12. Origin of charge density at LaAlO3-on-SrTiO3 heterointerfacespossibility of intrinsic doping

    Energy Technology Data Exchange (ETDEWEB)

    Siemons, W.

    2010-04-29

    As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

  13. Effective g-factors of carriers in inverted InAs/GaSb bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Xiaoyang [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Sullivan, Gerard [Teledyne Scientific and Imaging, Thousand Oaks, California 91630 (United States); Du, Rui-Rui [International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892 (United States)

    2016-01-04

    We perform tilt-field transport experiment on inverted InAs/GaSb, which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors, respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes, only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3.

  14. Optimization of Sour Cherry Juice Spray Drying as
Affected by Carrier Material and Temperature

    Science.gov (United States)

    Zorić, Zoran; Pedisić, Sandra; Dragović-Uzelac, Verica

    2016-01-01

    Summary Response surface methodology was applied for optimization of the sour cherry Marasca juice spray drying process with 20, 30 and 40% of carriers maltodextrin with dextrose equivalent (DE) value of 4–7 and 13–17 and gum arabic, at three drying temperatures: 150, 175 and 200 °C. Increase in carrier mass per volume ratio resulted in lower moisture content and powder hygroscopicity, higher bulk density, solubility and product yield. Higher temperatures decreased the moisture content and bulk density of powders. Temperature of 200 °C and 27% of maltodextrin with 4–7 DE were found to be the most suitable for production of sour cherry Marasca powder. PMID:28115901

  15. PAPR Reduction in OFDM Systems with Large Number of Sub-Carriers by Carrier Interferometry Approaches

    Institute of Scientific and Technical Information of China (English)

    HE Jian-hui; QUAN Zi-yi; MEN Ai-dong

    2004-01-01

    High Peak-to-Average Power Ratio (PAPR) is one of the major drawbacks of Orthogonal Frequency Division Multiplexing ( OFDM) systems. This paper presents the structures of the particular bit sequences leading to the maximum PAPR (PAPRmax) in Carrier-Interferometry OFDM (CI/OFDM) and Pseudo Orthogonal Carrier-Interferometry OFDM (PO-CI/OFDM) systems for Binary Phase Shift Keying (BPSK) modulation. Furthermore, the simulation and analysis of PAPRmax and PAPR cumulative distribution in CI/OFDM and PO-CI/OFDM systems with 2048 sub-carriers are presented in this paper. The results show that the PAPR of OFDM system with large number of sub-carriers reduced evidently via CI approaches.

  16. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  17. LWS/SET Technology Experiment Carrier

    Science.gov (United States)

    Sherman, Barry; Giffin, Geoff

    2002-01-01

    This paper examines the approach taken to building a low-cost, modular spacecraft bus that can be used to support a variety of technology experiments in different space environments. It describes the techniques used and design drivers considered to ensure experiment independence from as yet selected host spacecraft. It describes the technology experiment carriers that will support NASA's Living With a Star Space Environment Testbed space missions. NASA has initiated the Living With a Star (LWS) Program to develop a better scientific understanding to address the aspects of the connected Sun-Earth system that affect life and society. A principal goal of the program is to bridge the gap between science, engineering, and user application communities. The Space Environment Testbed (SET) Project is one element of LWS. The Project will enable future science, operational, and commercial objectives in space and atmospheric environments by improving engineering approaches to the accommodation and/or mitigation of the effects of solar variability on technological systems. The SET Project is highly budget constrained and must seek to take advantage of as yet undetermined partnering opportunities for access to space. SET will conduct technology validation experiments hosted on available flight opportunities. The SET Testbeds will be developed in a manner that minimizes the requirements for accommodation, and will be flown as flight opportunities become available. To access the widest range of flight opportunities, two key development requirements are to maintain flexibility with respect to accommodation constraints and to have the capability to respond quickly to flight opportunities. Experiments, already developed to the technology readiness level of needing flight validation in the variable Sun-Earth environment, will be selected on the basis of the need for the subject technology, readiness for flight, need for flight resources and particular orbit. Experiments will be

  18. Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films

    OpenAIRE

    Takahashi, Makoto; Uosaki, Kohei; Kita, Hideaki; Yamaguchi, Shoji

    1986-01-01

    The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with t...

  19. Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

    Science.gov (United States)

    Cai, Yu; Sha, Shuang

    2016-09-01

    This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers.

  20. Laboratory Density Functionals

    OpenAIRE

    Giraud, B G

    2007-01-01

    We compare several definitions of the density of a self-bound system, such as a nucleus, in relation with its center-of-mass zero-point motion. A trivial deconvolution relates the internal density to the density defined in the laboratory frame. This result is useful for the practical definition of density functionals.

  1. Experimental distribution of entanglement with separable carriers.

    Science.gov (United States)

    Fedrizzi, A; Zuppardo, M; Gillett, G G; Broome, M A; Almeida, M P; Paternostro, M; White, A G; Paterek, T

    2013-12-01

    The key requirement for quantum networking is the distribution of entanglement between nodes. Surprisingly, entanglement can be generated across a network without direct transfer-or communication-of entanglement. In contrast to information gain, which cannot exceed the communicated information, the entanglement gain is bounded by the communicated quantum discord, a more general measure of quantum correlation that includes but is not limited to entanglement. Here, we experimentally entangle two communicating parties sharing three initially separable photonic qubits by exchange of a carrier photon that is unentangled with either party at all times. We show that distributing entanglement with separable carriers is resilient to noise and in some cases becomes the only way of distributing entanglement through noisy environments.

  2. Solid lipid nanoparticles: A drug carrier system

    Directory of Open Access Journals (Sweden)

    Rashmi R Kokardekar

    2011-01-01

    Full Text Available Solid lipid nanoparticles (SLN are a type of nanoparticles. They are submicron colloidal carriers which are composed of physiological lipids, dispersed in water or in aqueous surfactant solutions. SLN have wide range of advantages over other types of nanoparticles. These include availability of large-scale production methods and no signs of cytotoxicity, which are main hindrances in the application of other types of nanoparticles. Hot and cold homogenization techniques are mainly employed for its production. They are mainly evaluated on the basis of their drug release profile and particle internal structure. The products based on SLN are under development. They have a very wide range of applications in cosmetics and pharmaceuticals. They can be applied for any purpose, for which nanoparticles have a distinct advantage. Thus, SLN can be used extensively as an alternative to the existing drug carrier systems, providing more flexibility with respect to the area of applications and also aspects for commercialization.

  3. Controlling carrier dynamics at the nanoscale

    Science.gov (United States)

    Cánovas, Enrique; Bonn, Mischa

    2016-10-01

    This Special issue is motivated by the occasion of the International Conference on Charge Carrier Dynamics at the Nanoscale (CCDNano), held in Santiago de Compostela (Spain) in September 2015. As chairs for the CCDNano meeting, we aimed at bringing together experts from different scientific fields in order to trigger interdisciplinary discussions and collaborations; the ultimate goal of the conference was to serve as a platform to advance and help unifying methodologies and theories from different research sub-fields. We also aimed at a deeper understanding of charge dynamics to contribute to the development of improved or novel nanostructured devices. This special issue keeps that spirit, and intends to provide an overview of ongoing research efforts regarding charge carrier dynamics at the nanoscale.

  4. Energy carriers in Norway; Energibaerere i Norge

    Energy Technology Data Exchange (ETDEWEB)

    2008-01-15

    Within the Norwegian energy consumption, electricity is by far the most dominant energy carrier. In the last thirty years electricity has had an increased significance, while oil has been reduce. A trend that is likely to continue. Energy politics has among others these objectives: environment, reliability of supply and effective energy supply. These objectives are somewhat contradictory. In agreement with the environmental politic phasing out oil leads to a reduction in greenhouse gases. However this politic will have a local impact only effecting Norway, in a larger European connection it might lead to a larger net emission of CO{sub 2}. A political intervention in the energy market might also lead to a reduction in the energy markets effectiveness and flexibility. This report addresses this problem: If a total phase out of the stationary oil consumption is conducted, what energy carriers will this consumption convert to?

  5. Superconductivity in carrier-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Takahiro Muranaka, Yoshitake Kikuchi, Taku Yoshizawa, Naoki Shirakawa and Jun Akimitsu

    2008-01-01

    Full Text Available We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm−3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

  6. Terahertz transport dynamics of graphene charge carriers

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due

    The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...

  7. DETECTION OF COMPLEXES OLIGODEOXYNUCLEOTIDES WITH POLYMERIC CARRIERS

    Directory of Open Access Journals (Sweden)

    V. V. Vlizlo

    2013-10-01

    Full Text Available The new method for detection of cationic oligoelectrolytes conjugates with oligodeoxyonucleotides, based on free diffusion of these substances in 0.8% agarose gels is developed. It enables to simplify and reduce the cost of visual identification of the best carrier among various polymer compounds and to uncover the fact of complex formation between the interacting agents resulting in formation of a ring precipitation. The universality of the proposed methodological approach is confirmed by interaction of coligodeoxynucleotides with other cationic polymer of natural origin, namely chitosan. Comparative analysis of our approach applicationto turbidimetry data concerning coligodeoxynucleotides complexes and their electrophoresis showed some advantages, among them are the ability to screen simultaneously a large number of polymeric carriers and no need for using of more expensive equipment and materials. To conclude the complexing occurrence it is enough nanomol amounts of oligodeoxynucleotide.

  8. Modulation Based on Probability Density Functions

    Science.gov (United States)

    Williams, Glenn L.

    2009-01-01

    A proposed method of modulating a sinusoidal carrier signal to convey digital information involves the use of histograms representing probability density functions (PDFs) that characterize samples of the signal waveform. The method is based partly on the observation that when a waveform is sampled (whether by analog or digital means) over a time interval at least as long as one half cycle of the waveform, the samples can be sorted by frequency of occurrence, thereby constructing a histogram representing a PDF of the waveform during that time interval.

  9. Leasing in low-cost carriers

    OpenAIRE

    Aleixo, José Frederico Pais

    2014-01-01

    The aim of this paper is to explore the use of aircraft leasing as a financing instrument in the low-cost carriers’ sector. These airlines have been showing a huge growth in the customers’ preferences, while aircraft leasing plays a relevant role in the financing options of airlines. In this study we determined that lease future commitments represent on average 80% of other debt commitments in low-cost carriers. Furthermore, we discovered that the leasing rate in low-cost ai...

  10. Formic Acid as a Hydrogen Energy Carrier

    KAUST Repository

    Eppinger, Jorg

    2016-12-15

    The high volumetric capacity (S3 g H-2/L) and its low toxicity and flammability under ambient conditions make formic acid a promising hydrogen energy carrier. Particularly, in the past decade, significant advancements have been achieved in catalyst development for selective hydrogen generation from formic acid. This Perspective highlights the advantages of this approach with discussions focused on potential applications in the transportation sector together with analysis of technical requirements, limitations, and costs.

  11. Polymeric micellar drug carriers with fluorescent properties

    OpenAIRE

    Abreu, Ana Sofia Lemos Machado; Sá, Arsénio Vasconcelos; Oliveira, Manuel; Moura, I; Machado, A.V.

    2015-01-01

    Self-assembling polymeric surfactants, based on amphiphilic block copolymers into nanosized aggregates in aqueous solution, are of great interest in the biomedical fields as one class of promising carrier systems, for drug delivery, gene therapy and diagnostic biosensors.[1] The incorporation of fluorescent probes into polymeric micelles has been fulfilled either by physically encapsulation or chemically attachment of fluorophores. [2] These micelle-based fluorescent probes not only facili...

  12. Commercial Air Carrier Vulnerabilities to Information Operations

    Science.gov (United States)

    2007-11-02

    GMO /ENS/02E-11 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR FORCE INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio...AFIT/ GMO /ENS/02E-11 COMMERCIAL AIR CARRIER VULNERABILITIES TO INFORMATION OPERATIONS...networks that without them, “there is no water coming out of your tap; there is no electricity lighting your room; there is no food being transported to

  13. Evaluation of granulated lactose as a carrier for DPI formulations 1: effect of granule size.

    Science.gov (United States)

    Du, Ping; Du, Ju; Smyth, Hugh D C

    2014-12-01

    The objective of this study was to investigate the effect of large granulated lactose carrier particle systems on aerosol performance of dry powder inhaler formulations. Granulated lactose carriers with average sizes ranging from 200 to 1,000 μm were prepared and subsequently fractionated into separate narrow size powders. The fractionated granulated lactose (GL) samples were characterized in terms of size, specific surface area, surface roughness, morphology, density, flowability, and solid-state. The in vitro aerosolization performance was performed on the different size fractions of GL samples from a commercial inhaler device (Aerolizer®) with a model formulation (2% w/w salbutamol sulfate). The cascade impaction parameters employed were 60 or 90 L/min with standard (aperture size, 0.6 mm) or modified piercing holes (aperture size, 1.2 mm) of the inhaler loaded capsules. It was shown that the largest size fraction formulation (850-1000 μm) had a slight improvement in the fine particle fraction (FPF) compared to immediately preceding size fractions, explained by a smaller adhesive force between drug and carrier. Compared to commercial piercing holes, enlarged piercing holes generated a slight decreasing trend of FPF as the lactose powder sizes increased from 200-250 μm to 600-850 μm, perhaps due to the reduced detachment force by flow forces. The size, surface roughness, density, and flowability of lactose carrier as well as device design all contributed to the aerosol dispersion performance of granulated lactose-based adhesive mixtures. It was concluded that poorer or enhanced redispersion performance is not an inherent property to the significantly large size of granulated lactose carriers as previously contended.

  14. Photoinduced carrier annihilation in silicon pn junction

    Science.gov (United States)

    Sameshima, Toshiyuki; Motoki, Takayuki; Yasuda, Keisuke; Nakamura, Tomohiko; Hasumi, Masahiko; Mizuno, Toshihisa

    2015-08-01

    We report analysis of the photo-induced minority carrier effective lifetime (τeff) in a p+n junction formed on the top surfaces of a n-type silicon substrate by ion implantation of boron and phosphorus atoms at the top and bottom surfaces followed by activation by microwave heating. Bias voltages were applied to the p+ boron-doped surface with n+ phosphorus-doped surface kept at 0 V. The values of τeff were lower than 1 × 10-5 s under the reverse-bias condition. On the other hand, τeff markedly increased to 1.4 × 10-4 s as the forward-bias voltage increased to 0.7 V and then it leveled off when continuous-wave 635 nm light was illuminated at 0.74 mW/cm2 on the p+ surface. The carrier annihilation velocity S\\text{p + } at the p+ surface region was numerically estimated from the experimental τeff. S\\text{p + } ranged from 4000 to 7200 cm/s under the reverse-bias condition when the carrier annihilation velocity S\\text{n + } at the n+ surface region was assumed to be a constant value of 100 cm/s. S\\text{p + } markedly decreased to 265 cm/s as the forward-bias voltage increased to 0.7 V.

  15. Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

    Science.gov (United States)

    Westland, Duncan James

    Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

  16. 49 CFR 373.101 - Motor carrier bills of lading.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Motor carrier bills of lading. 373.101 Section 373.101 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL MOTOR CARRIER SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION FEDERAL MOTOR CARRIER SAFETY REGULATIONS RECEIPTS...

  17. Carrier peptide-mediated transepithelial permeation of biopharmaceuticals

    DEFF Research Database (Denmark)

    Kristensen, Mie; Nielsen, Hanne Mørck

    2015-01-01

    of the molar mixing ratio between the carrier peptide and the therapeutic cargo, whereas the direct conjugation approach ensures an inherent proximity of the carrier peptide to its therapeutic cargo. So far studies addressing the choice of using the co-administration approach over the conjugation approach......-34)) and the widely studied CPP penetratin were employed as therapeutic cargo and carrier peptide, respectively....

  18. Terahertz carrier dynamics in graphene and graphene nanostructures

    DEFF Research Database (Denmark)

    Jensen, Søren A.; Turchinovich, Dmitry; Tielrooij, Klaas Jan

    2014-01-01

    Photoexcited charge carriers in 2D graphene and in 1D graphene nanostructures were studied with optical pump-THz probe spectroscopy. We find efficient hot-carrier multiplication in 2D graphene, and predominantly free carrier early time response in 1D nanostructures. © 2014 OSA....

  19. 14 CFR 252.3 - Smoking ban: air carriers.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Smoking ban: air carriers. 252.3 Section... PROCEEDINGS) ECONOMIC REGULATIONS SMOKING ABOARD AIRCRAFT § 252.3 Smoking ban: air carriers. Air carriers shall prohibit smoking on all scheduled passenger flights....

  20. 14 CFR 252.5 - Smoking ban: foreign air carriers.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Smoking ban: foreign air carriers. 252.5... PROCEEDINGS) ECONOMIC REGULATIONS SMOKING ABOARD AIRCRAFT § 252.5 Smoking ban: foreign air carriers. (a) Foreign air carriers shall prohibit smoking on all scheduled passenger flight segments: (1) Between...

  1. 19 CFR 18.2 - Receipt by carrier; manifest.

    Science.gov (United States)

    2010-04-01

    ... TREASURY TRANSPORTATION IN BOND AND MERCHANDISE IN TRANSIT General Provisions § 18.2 Receipt by carrier... Carrier (or Exporter) Attorney-in-fact or Agent of Carrier (or Exporter) Date (3) Merchandise delivered... prescribed in subpart D of part 123 of this chapter, relating to merchandise in transit through the...

  2. Joint Iterative Carrier Synchronization and Signal Detection for Dual Carrier 448 Gb/s PDM 16-QAM

    DEFF Research Database (Denmark)

    Zibar, Darko; Carvalho, Luis; Estaran Tolosa, Jose Manuel;

    2013-01-01

    Soft decision driven joint carrier synchronization and signal detection, employing expectation maximization, is experimentally demonstrated. Employing soft decisions offers an improvement of 0.5 dB compared to hard decision digital PLL based carrier synchronization and demodulation....

  3. Literature review of the passenger airline business models: Full service carrier, low-cost carrier and charter airlines

    NARCIS (Netherlands)

    Carmona Benitez, R.B.; Lodewijks, G.

    2008-01-01

    The deregulation and liberalization of the air transportation industry have developed three main passenger business models: full service carriers, low-cost carriers, and charter airlines. Deregulation removed regulated fares and routes increasing competition and yields. Airlines business models main

  4. Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects.

    Science.gov (United States)

    Xia, Mingjun; Ghafouri-Shiraz, H

    2016-03-01

    This paper reports a new model for strained quantum well lasers, which are based on the quantum well transmission line modeling method where effects of both carrier transport and carrier heating have been included. We have applied this new model and studied the effect of carrier transport on the output waveform of a strained quantum well laser both in time and frequency domains. It has been found that the carrier transport increases the turn-on, turn-off delay times and damping of the quantum well laser transient response. Also, analysis in the frequency domain indicates that the carrier transport causes the output spectrum of the quantum well laser in steady state to exhibit a redshift which has a narrower bandwidth and lower magnitude. The simulation results of turning-on transients obtained by the proposed model are compared with those obtained by the rate equation laser model. The new model has also been used to study the effects of pump current spikes on the laser output waveforms properties, and it was found that the presence of current spikes causes (i) wavelength blueshift, (ii) larger bandwidth, and (iii) reduces the magnitude and decreases the side-lobe suppression ratio of the laser output spectrum. Analysis in both frequency and time domains confirms that the new proposed model can accurately predict the temporal and spectral behaviors of strained quantum well lasers.

  5. Future Road Density

    Data.gov (United States)

    U.S. Environmental Protection Agency — Road density is generally highly correlated with amount of developed land cover. High road densities usually indicate high levels of ecological disturbance. More...

  6. Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene)

    NARCIS (Netherlands)

    Tanase, C; Blom, PWM; de Leeuw, DM; Meijer, EJ

    2004-01-01

    The hole transport in various poly(p-phenylene vinylene) (PPV) derivatives has been investigated in field-effect transistors (FETs) and light-emitting diodes (LEDs) as a function of temperature and applied bias. The discrepancy between the experimental hole mobilities extracted from FETs and LEDs ba

  7. Carrier density effect on recombination in PTB7-based solar cell.

    Science.gov (United States)

    Moritomo, Yutaka; Yonezawa, Kouhei; Yasuda, Takeshi

    2015-09-01

    Organic solar cells (OSCs) are promising alternatives to the conventional inorganic solar cells due to their low-cost processing and compatibility with flexible substrates. The development of low band-gap polymer, e.g., poly-[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3]thiophenediyl

  8. Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S.; Su, L. Q.; Kon, J.; Gfroerer, T.; Wanlass, M. W.; Zhang, Y.

    2017-05-01

    Photoluminescence (PL) imaging has been shown to be an efficient technique for investigating carrier diffusion in semiconductors. In the past, the measurement was typically carried out by measuring at one wavelength (e.g., at the band gap) or simply the whole emission band. At room temperature in a semiconductor like GaAs, the band-to-band PL emission may occur in a spectral range over 200 meV, vastly exceeding the average thermal energy of about 26 meV. To investigate the potential dependence of the carrier diffusion on the carrier kinetic energy, we performed wavelength selective PL imaging on a GaAs double hetero-structure in a spectral range from about 70 meV above to 50 meV below the bandgap, extracting the carrier diffusion lengths at different PL wavelengths by fitting the imaging data to a theoretical model. The results clearly show that the locally generated carriers of different kinetic energies mostly diffuse together, maintaining the same thermal distribution throughout the diffusion process. Potential effects related to carrier density, self-absorption, lateral wave-guiding, and local heating are also discussed.

  9. Acousto-optic pulse picking scheme with carrier-frequency-to-pulse-repetition-rate synchronization.

    Science.gov (United States)

    de Vries, Oliver; Saule, Tobias; Plötner, Marco; Lücking, Fabian; Eidam, Tino; Hoffmann, Armin; Klenke, Arno; Hädrich, Steffen; Limpert, Jens; Holzberger, Simon; Schreiber, Thomas; Eberhardt, Ramona; Pupeza, Ioachim; Tünnermann, Andreas

    2015-07-27

    We introduce and experimentally validate a pulse picking technique based on a travelling-wave-type acousto-optic modulator (AOM) having the AOM carrier frequency synchronized to the repetition rate of the original pulse train. As a consequence, the phase noise characteristic of the original pulse train is largely preserved, rendering this technique suitable for applications requiring carrier-envelope phase stabilization. In a proof-of-principle experiment, the 1030-nm spectral part of an 74-MHz, carrier-envelope phase stable Ti:sapphire oscillator is amplified and reduced in pulse repetition frequency by a factor of two, maintaining an unprecedentedly low carrier-envelope phase noise spectral density of below 68 mrad. Furthermore, a comparative analysis reveals that the pulse-picking-induced additional amplitude noise is minimized, when the AOM is operated under synchronicity. The proposed scheme is particularly suitable when the down-picked repetition rate is still in the multi-MHz-range, where Pockels cells cannot be applied due to piezoelectric ringing.

  10. Increase of Carrier-to-Noise Ratio in GPS Receivers Caused by Continuous-Wave Interference

    Directory of Open Access Journals (Sweden)

    J. Li

    2016-09-01

    Full Text Available The increased use of personal private devices (PPDs is drawing greater attention to the effects of continuous-wave interference (CWI on the performance of global positioning system (GPS receivers. The effective carrier-to-noise density ratio (C/N0, an essential index of GNSS receiver performance, is studied in this paper. Receiver tracking performance deteriorates in the presence of interference. Hence, the effective C/N0, which measures tracking performance, decreases. However, simulations and bench tests have shown that the effective C/N0 may increase in the presence of CWI. The reason is that a sinusoidal signal is induced by the CWI in the correlator and may be tracked by the carrier tracking loop. Thus, the effective carrier power depends on the power of the signal induced by the CWI, and the effective C/N0 increases with the power of the CWI. The filtering of the CWI in the carrier tracking loop correlator and its effect on the phase locked loop (PLL tracking performance are analyzed. A mathematical model of the effect of the CWI on the effective C/N0 is derived. Simulation results show that the proposed model is more accurate than existing models, especially when the jam-to-signal ratio (JSR is greater than 30 dBc.

  11. Probing ultrafast carrier dynamics, nonlinear absorption and refraction in core–shell silicon nanowires

    Indian Academy of Sciences (India)

    Sunil Kumar; M Khorasaninejad; M M Adachi; K S Karim; S S Saini; A K Sood

    2012-09-01

    We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time resolved differential reflectivity and transmission spectroscopy at 3.15 eV and 1.57 eV photon energies. The complex behaviour of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state-filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photogenerated carrier density. Independent experimental results on crystalline silicon-on-sapphire (SOS) help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single-beam z-scan nonlinear transmission experiments at 1.57 eV in both open- and close-aperture configurations yield two-photon absorption coefficient (∼3 cm/GW) and nonlinear refraction coefficient (−2.5 × 10−4 cm2 /GW).

  12. A self-consistent first-principle based approach to model carrier mobility in organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Meded, Velimir; Friederich, Pascal; Symalla, Franz; Neumann, Tobias; Danilov, Denis; Wenzel, Wolfgang [Institute of Nanotechnology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2015-12-31

    Transport through thin organic amorphous films, utilized in OLEDs and OPVs, has been a challenge to model by using ab-initio methods. Charge carrier mobility depends strongly on the disorder strength and reorganization energy, both of which are significantly affected by the details in environment of each molecule. Here we present a multi-scale approach to describe carrier mobility in which the materials morphology is generated using DEPOSIT, a Monte Carlo based atomistic simulation approach, or, alternatively by molecular dynamics calculations performed with GROMACS. From this morphology we extract the material specific hopping rates, as well as the on-site energies using a fully self-consistent embedding approach to compute the electronic structure parameters, which are then used in an analytic expression for the carrier mobility. We apply this strategy to compute the carrier mobility for a set of widely studied molecules and obtain good agreement between experiment and theory varying over several orders of magnitude in the mobility without any freely adjustable parameters. The work focuses on the quantum mechanical step of the multi-scale workflow, explains the concept along with the recently published workflow optimization, which combines density functional with semi-empirical tight binding approaches. This is followed by discussion on the analytic formula and its agreement with established percolation fits as well as kinetic Monte Carlo numerical approaches. Finally, we skatch an unified multi-disciplinary approach that integrates materials science simulation and high performance computing, developed within EU project MMM@HPC.

  13. SOLID LIPID NANOPARTICLES AND NANO LIPID CARRIERS: AS NOVEL SOLID LIPID BASED DRUG CARRIER

    Directory of Open Access Journals (Sweden)

    Girish B. Singhal

    2011-02-01

    Full Text Available Interest in lipid based drug delivery has developed over the past decade fuelled by a better understanding of the multiple roles lipids may play in enhancing oral bioavailability. Moreover, the emergence of novel excipients with acceptable regulatory and safety profiles coupled with advances in formulation technologies have greatly improved the potential for successful lipid based formulations. Solid lipid nanoparticles (SLN introduced in 1991 represent an alternative carrier system to traditional colloidal carriers, such as emulsions, liposomes and polymeric micro- and nanoparticles. SLN combine advantages of the traditional systems but avoid some of their major disadvantages. This paper reviews the present state of the art regarding production techniques for SLN/ nanostructured lipid carrier (NLC, drug incorporation method and types, stability. The potential of SLN/NLC to be exploited for the different administration routes is also highlighted.

  14. Crowding and Density

    Science.gov (United States)

    Design and Environment, 1972

    1972-01-01

    Three-part report pinpointing problems and uncovering solutions for the dual concepts of density (ratio of people to space) and crowding (psychological response to density). Section one, A Primer on Crowding,'' reviews new psychological and social findings; section two, Density in the Suburbs,'' shows conflict between status quo and increased…

  15. How Europe's Low-Cost Carriers Sidestepped Traditional Carriers' Competitive Advantages

    DEFF Research Database (Denmark)

    Hvass, Kristian Anders

    The initial appearance of U.S. low-cost carriers forced incumbents to create new forms of competitive advantage. These were successful hindrances for nearly two decades. Concurrently, incumbents in Europe implemented similar tools, although within a regulated market. However, Europe's low-cost...... airlines were more successful and had a greater initial impact in their early years than their U.S. compatriots. This paper will attempt to highlight some of the differences between the two markets and explain why European low-cost airlines had more advantages following their market deregulation...... and sidestepped traditional carriers' competitive advantages....

  16. A new lubricant carrier for metal forming

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Bay, Niels; Tang, Peter Torben

    2009-01-01

    A lubricant carrier for metal forming processes is developed. Surfaces with pores of micrometer size for entrapping lubricant are generated by electrochemical deposition of an alloy, consisting of two immiscible metals, of which one metal subsequently is etched away leaving 5 mu m layers...... with a sponge-like structure, The pores will actas lubricant reservoirs during severe forming processes. The deposited microporous layer is evaluated by friction tests in the form of ring compression tests and double cup extrusion tests. Furthermore the anti-seizure properties are investigated by single cup...

  17. Hardware Trojan by Hot Carrier Injection

    CERN Document Server

    Shiyanovskii, Y; Papachristou, C; Weyer, D; Clay, W

    2009-01-01

    This paper discusses how hot carrier injection (HCI) can be exploited to create a trojan that will cause hardware failures. The trojan is produced not via additional logic circuitry but by controlled scenarios that maximize and accelerate the HCI effect in transistors. These scenarios range from manipulating the manufacturing process to varying the internal voltage distribution. This new type of trojan is difficult to test due to its gradual hardware degradation mechanism. This paper describes the HCI effect, detection techniques and discusses the possibility for maliciously induced HCI trojans.

  18. Carbon-neutral fuels and energy carriers

    CERN Document Server

    Muradov, Nazim Z

    2011-01-01

    Concerns over an unstable energy supply and the adverse environmental impact of carbonaceous fuels have triggered considerable efforts worldwide to find carbon-free or low-carbon alternatives to conventional fossil fuels. Carbon-Neutral Fuels and Energy Carriers emphasizes the vital role of carbon-neutral energy sources, transportation fuels, and associated technologies for establishing a sustainable energy future. Each chapter draws on the insight of world-renowned experts in such diverse fields as photochemistry and electrochemistry, solar and nuclear energy, biofuels and synthetic fuels, ca

  19. The solute carrier 6 family of transporters

    DEFF Research Database (Denmark)

    Bröer, Stefan; Gether, Ulrik

    2012-01-01

    The solute carrier 6 (SLC6) family of the human genome comprises transporters for neurotransmitters, amino acids, osmolytes and energy metabolites. Members of this family play critical roles in neurotransmission, cellular and whole body homeostasis. Malfunction or altered expression...... of these transporters is associated with a variety of diseases. Pharmacological inhibition of the neurotransmitter transporters in this family is an important strategy in the management of neurological and psychiatric disorders. This review provides an overview of the biochemical and pharmacological properties...... of the SLC6 family transporters....

  20. 78 FR 5243 - Motor Carrier Safety Advisory Committee (MCSAC): Public Meeting of Subcommittees

    Science.gov (United States)

    2013-01-24

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee (MCSAC): Public Meeting of Subcommittees AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of meeting of Motor Carrier Safety Advisory Committee (MCSAC). SUMMARY: FMCSA announces that...

  1. 76 FR 62496 - Motor Carrier Safety Advisory Committee Series of Public Subcommittee Meetings

    Science.gov (United States)

    2011-10-07

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee Series of Public Subcommittee Meetings AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of meeting. SUMMARY: The FMCSA's Motor Carrier Safety Advisory Committee (MCSAC) will hold working group...

  2. 76 FR 5424 - Motor Carrier Safety Advisory Committee; Request for Nominations

    Science.gov (United States)

    2011-01-31

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee; Request for Nominations AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Request for Nominations to the Motor Carrier Safety Advisory Committee (MCSAC). SUMMARY: The FMCSA solicits nominations...

  3. 77 FR 60507 - Motor Carrier Safety Advisory Committee (MCSAC): Public Subcommittee Meeting

    Science.gov (United States)

    2012-10-03

    ... Federal Motor Carrier Safety Administration Motor Carrier Safety Advisory Committee (MCSAC): Public Subcommittee Meeting AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice of Meeting of Compliance, Safety, Accountability (CSA) Subcommittee of Motor Carrier Safety...

  4. Theory of anisotropic diamagnetism, local moment magnetization and carrier spin-polarization in Pb1-EuTe

    Indian Academy of Sciences (India)

    R C Patnaik; R K Das; R L Hota; G S Tripathi

    2001-10-01

    We present theoretical analyses of anisotropic lattice diamagnetism, magnetization due to magnetic ions and carrier spin-polarization in the diluted magnetic semiconductor, Pb1-EuTe. The lattice diamagnetism results from orbital susceptibility due to inter band effects and spin-orbit contributions. The spin-orbit contribution is found to be dominant. However, both the contributions show pronounced anisotropy. With increase inx, the diamagnetism decreases. We consider contributions from randomly distributed isolated magnetic ions and clusters of pairs and triads for the local moment magnetization. The isolated magnetic-ion contribution is the dominant one. We calculate the magnetization for two typical magnetic ion concentrations: = 0.03 and = 0.06. Temperature dependence of the magnetization is also considered. Apart from lattice and localized magnetic ions, the carrier contribution to the spin-density is also calculated for a carrier density of = 1018 cm-3. The relative spin-density of carriers increases with increase in the magnetic field strength and magnetic ion concentration. The agreement with experiment where available is reasonably good.

  5. Specific features of quasineutral carrier transport modes in semiconductors and semiconductor structures

    Science.gov (United States)

    Mnatsakanov, T. T.; Tandoev, A. G.; Yurkov, S. N.; Levinshtein, M. E.

    2009-07-01

    It has been demonstrated that the field dependence of the electron and hole mobility strongly affects the carrier distribution in semiconductor structures under quasineutral conditions. Taking into account this phenomenon, a new equation for quasineutral carrier transport in semiconductors and semiconductor structures has been suggested. The concept of the critical current density jcr has been introduced and validated. At j Lt jcr, the suggested equation transforms to the well-known 'classical' equation of quasineutral transport. By contrast, at j > jcr, novel solutions become apparent from the suggested equation. The performed analysis gives insight into what happens in regions in which the quasineutral drift and DSQD (diffusion stimulated by quasineutral drift) modes predominate. Analytical expressions have been derived for the dependences of the voltage drops across the quasineutral drift and DQSD regions on current. It has been shown that, at high current densities, the voltage drop across the DSQD region tends to decrease as the current density increases. The results obtained enable a qualitative interpretation of the negative differential conductivity region in the current-voltage characteristic of forward-biased semiconductor structures, which arises at high current densities.

  6. Generalized Carrier to Interference Ratio Analysis for the Shotgun Cellular System

    CERN Document Server

    Madhusudhanan, Prasanna; Liu, Youjian; Brown, Timothy X; Baker, Kenneth

    2010-01-01

    In this paper, the performance of cellular systems in which the base-stations (BS) are randomly placed (so-called shotgun cellular system, SCS) is studied. Previous results for a uniform 2-dimensional distribution of BS are generalized to non-uniform placement of BS in any dimension. The carrier-to-interference ratio (CIR) and the carrier-to-interference-plus-noise ratio (CINR) are analyzed for dense and sparse BS density cellular systems, respectively. A semi-analytical expression for the tail probability of the CIR is derived. Additionally, a tool for comparing the CIR performances of two SCSs based on BS densities is presented. With these results, we completely characterize the performance of a SCS with an arbitrary BS density function. Next, a SCS affected by random shadow fading is shown to be equivalent to another SCS without shadow fading and a different BS density function, and hence the performance of a uniform l-D SCS is independent of shadow fading. Thus, for a sparse uniform l-D SCS, the effect of...

  7. Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films

    Directory of Open Access Journals (Sweden)

    A. Roy Barman

    2012-03-01

    Full Text Available Thin films of Ta incorporated TiO2 grown by pulsed laser deposition under specific growth conditions show room temperature ferromagnetism. Ta introduces carriers and concomitantly cationic defects, the combination of which leads to ferromagnetism. In this paper, we report on the dependence of the carrier and cationic defect density (compensation on various parameters such as oxygen growth pressure, temperature and Ta concentration. Most likely, the Ti vacancies act as magnetic centers and the free electrons help with the exchange leading to ferromagnetism via Ruderman-Kittel-Kasuya-Yosida mechanism.

  8. Information carriers and (reading them through) information theory in quantum chemistry.

    Science.gov (United States)

    Geerlings, Paul; Borgoo, Alex

    2011-01-21

    This Perspective discusses the reduction of the electronic wave function via the second-order reduced density matrix to the electron density ρ(r), which is the key ingredient in density functional theory (DFT) as a basic carrier of information. Simplifying further, the 1-normalized density function turns out to contain essentially the same information as ρ(r) and is even of preferred use as an information carrier when discussing the periodic properties along Mendeleev's table where essentially the valence electrons are at stake. The Kullback-Leibler information deficiency turns out to be the most interesting choice to obtain information on the differences in ρ(r) or σ(r) between two systems. To put it otherwise: when looking for the construction of a functional F(AB) = F[ζ(A)(r),ζ(B)(r)] for extracting differences in information from an information carrier ζ(r) (i.e. ρ(r), σ(r)) for two systems A and B the Kullback-Leibler information measure ΔS is a particularly adequate choice. Examples are given, varying from atoms, to molecules and molecular interactions. Quantum similarity of atoms indicates that the shape function based KL information deficiency is the most appropriate tool to retrieve periodicity in the Periodic Table. The dissimilarity of enantiomers for which different information measures are presented at global and local (i.e. molecular and atomic) level leads to an extension of Mezey's holographic density theorem and shows numerical evidence that in a chiral molecule the whole molecule is pervaded by chirality. Finally Kullback-Leibler information profiles are discussed for intra- and intermolecular proton transfer reactions and a simple S(N)2 reaction indicating that the theoretical information profile can be used as a companion to the energy based Hammond postulate to discuss the early or late transition state character of a reaction. All in all this Perspective's answer is positive to the question of whether an even simpler carrier of

  9. Probability densities and Lévy densities

    DEFF Research Database (Denmark)

    Barndorff-Nielsen, Ole Eiler

    For positive Lévy processes (i.e. subordinators) formulae are derived that express the probability density or the distribution function in terms of power series in time t. The applicability of the results to finance and to turbulence is briefly indicated.......For positive Lévy processes (i.e. subordinators) formulae are derived that express the probability density or the distribution function in terms of power series in time t. The applicability of the results to finance and to turbulence is briefly indicated....

  10. The effect of carrier surface and bulk properties on drug particle detachment from crystalline lactose carrier particles during inhalation, as function of carrier payload and mixing time

    NARCIS (Netherlands)

    Dickhoff, B.H.J.; de Boer, Anne; Lambregts, D.; Frijlink, H.W.

    2003-01-01

    The effect of carrier payload and mixing time on the redispersion of drug particles from adhesive mixtures during inhalation for two different drugs (budesonide and disodium cromoglycate) has been investigated. A special test inhaler which retains carrier crystals during inhalation was used at 30 an

  11. Facilitated transport near the carrier saturation limit

    Directory of Open Access Journals (Sweden)

    Anawat Sungpet

    2002-11-01

    Full Text Available Permeation of ethylbenzene, styrene and 1-hexene through perfluorosulfonate ionomer membranes was carried out with the feed concentrations ranging from 1 M to pure. On comparison, fluxes of ethylbenzene through the Ag+-form membrane were the lowest. Only a small increase in ethylbenzene flux was observed after the feed concentration exceeded 3 M, indicating the existence of carrier saturation. The increase in styrene flux was suppressed to some degree at high concentration driving forces. In contrast, 1-hexene flux was the highest and continued to increase even at very high feed concentrations. After the experiments with pure feeds, extraction of the solutes from the membranes revealed that 62.5% of Ag+ ions reacted with 1-hexene as against 40.6% for styrene and 28.9% for ethylbenzene. Equilibrium constants, determined by distribution method, of 1-hexene, styrene and ethylbenzene were 129, 2.2 and 0.7 M-1 respectively, which suggested that stability of the complex was a key factor in the carrier saturation phenomenon.

  12. Localized charge carriers in graphene nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Bischoff, D., E-mail: dominikb@phys.ethz.ch; Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, 8093 Zurich (Switzerland)

    2015-09-15

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  13. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    NARCIS (Netherlands)

    Suchand Sandeep, C.S.; Ten Cate, S.; Schins, J.M.; Savenije, T.J.; Liu, Y.; Law, M.; Kinge, S.; Houtepen, A.J.; Siebbeles, L.D.A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has

  14. Different elution modes and field programming in gravitational field-flow fractionation: field programming using density and viscosity gradients.

    Science.gov (United States)

    Plocková, Jana; Chmelík, Josef

    2006-06-23

    In previous papers, several approaches to programming of the resulting force field in GFFF were described and investigated. The experiments were dealing with flow-velocity and channel thickness, i.e. factors influencing hydrodynamic lift forces (HLF). The potential of density and viscosity of carrier liquid for field programming was predicted and demonstrated by preliminary experiments. This work is devoted to experimental verification of the influence of carrier liquid density and viscosity. Several carrier liquid density and simultaneously viscosity gradients using water-methanol mixtures are in this work implemented in the separation of a model silica mixture. Working with the water-methanol gradients, one is not able to separate the influence of density from the contribution of viscosity. However, we found experimental conditions to show the isolated effect of carrier liquid density (two water-methanol mixtures of equal viscosity differing in their densities). In order to demonstrate the isolated effect of viscosity, we implemented in this work a new system of (hydroxypropyl)methyl cellulose (HPMC) carrier liquids. Three different HPMC compositions enabled to vary the viscosity more than two times at almost constant density. With increasing carrier liquid viscosity, the focusing and elevating trend was clearly pronounced for 5 and 10 microm silica particles. By the isolated effect of increased viscosity, the centre of the 10 microm particle zone was elevated to the streamline at 16% of the channel height. These experiments have shown that the influence of carrier liquid viscosity on HLF should be taken into account even at higher levels above the channel bottom, i.e. beyond the near-wall region. Further, it is shown that higher value of carrier liquid viscosity improves the separation of the model mixture in terms of time and resolution.

  15. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    Science.gov (United States)

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-06

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2).

  16. Carrier generation and electronic properties of a single-component pure organic metal

    Science.gov (United States)

    Kobayashi, Yuka; Terauchi, Takeshi; Sumi, Satoshi; Matsushita, Yoshitaka

    2017-01-01

    Metallic conduction generally requires high carrier concentration and wide bandwidth derived from strong orbital interaction between atoms or molecules. These requisites are especially important in organic compounds because a molecule is fundamentally an insulator; only multi-component salts with strong intermolecular interaction--namely, only charge transfer complexes and conducting polymers--have demonstrated intrinsic metallic behaviour. Herein we report a single-component electroactive molecule, zwitterionic tetrathiafulvalene(TTF)-extended dicarboxylate radical (TED), exhibiting metallic conduction even at low temperatures. TED exhibits d.c. conductivities of 530 S cm-1 at 300 K and 1,000 S cm-1 at 50 K with copper-like electronic properties. Spectroscopic and theoretical investigations of the carrier-generation mechanism and the electronic states of this single molecular species reveal a unique electronic structure with a spin-density gradient in the extended TTF moieties that becomes, in itself, a metallic state.

  17. Analytical model of carrier mobility in a Polymer Field Effect Transistor

    Directory of Open Access Journals (Sweden)

    Milošević Milan M.

    2007-01-01

    Full Text Available In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphically. In comparison to accessible experimental results excellent correspondence was found. This model enables the calculation of simple POFET current-voltage I (V characteristics.

  18. Torrefaction of woody and agro biomasses as energy carriers for European markets

    Energy Technology Data Exchange (ETDEWEB)

    Wilen, C. [VTT Technical Research Centre of Finland, Espoo (Finland)], email: carl.wilen@vtt.fi

    2012-07-01

    New large scale bioenergy carriers are coming to the industrial demonstration phase, such as torrefaction and pyrolysis technologies. Torrefied wood pellets (TOP pellets) will give high energy volumetric density and properties similar to coal in large scale utility boilers. Torrefaction offer an interesting opportunity to replace fossil fuels by co-firing TOP pellets in coal fired pulverized combustion (PC) boilers. The production units can operate in standalone mode or integrated to industrial CHP or forest industry fluidised bed boilers. There are currently more than 950 saw, paper and pulp mills in Europe. They offer attractive business options for energy carrier investment based on existing raw material and forest residue logistics. This project creates good understanding of TOP pellet production, properties, potential uses, and competitiveness and European business opportunities. The project also aims at introducing and promoting Finnish solutions for these markets.

  19. Influence of free carriers on exciton ground states in quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Klochikhin, A.A. [Ioffe Physical Technical Institute, 194021 St. Petersburg (Russian Federation); Nuclear Physics Institute, 350000 St. Petersburg (Russian Federation); Kochereshko, V.P., E-mail: vladimir.kochereshko@mail.ioffe.ru [Ioffe Physical Technical Institute, 194021 St. Petersburg (Russian Federation); Spin Optics Laboratory, St. Petersburg State University, 198904 St. Petersburg (Russian Federation); Tatarenko, S. [CEA-CNRS Group “Nanophysique et Semiconducteurs”, Institut Néel, CNRS and Universite Joseph Fourier, 25 Avenue des Martyrs, 38042 Grenoble (France)

    2014-10-15

    The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well that contains a gas of free electrons is considered in the framework of the random phase approximation. The effects of the exciton–charge-density interaction and the inelastic scattering processes due to the electron–electron exchange interaction are taken into account. The effect of phase-space filling is considered using an approximate approach. The results of the calculation are compared with the experimental data. - Highlights: • We discussed the effect of free carriers on the exciton ground state in quantum wells. • The processes of exciton–electron scattering become the most important for excitons in doped QWs. • The direct Coulomb scattering can be neglected. • The most important becomes the exchange inelastic exciton–electron scattering.

  20. Photoexcited Carrier Dynamics of In2S3 Thin Films.

    Science.gov (United States)

    McCarthy, Robert F; Schaller, Richard D; Gosztola, David J; Wiederrecht, Gary P; Martinson, Alex B F

    2015-07-02

    Indium sulfide (In2S3) is a promising absorber base for substitutionally doped intermediate band photovoltaics (IBPV); however, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. The kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition are deduced from photoconductivity, photoluminescence (PL), and transient absorption spectroscopy. We develop a map of excited-state dynamics for polycrystalline thin films including a secondary conduction band ∼2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (∼100 ns) transients. Band-edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (<30 ps) and deep defect levels on IBPV employing In2S3-based absorbers is finally considered.

  1. Thioredoxin as a fusion tag for carrier-driven crystallization.

    Science.gov (United States)

    Corsini, Lorenzo; Hothorn, Michael; Scheffzek, Klaus; Sattler, Michael; Stier, Gunter

    2008-12-01

    Structural investigations are frequently hindered by difficulties in obtaining diffracting crystals of the target protein. Here, we report the crystallization and structure solution of the U2AF homology motif (UHM) domain of splicing factor Puf60 fused to Escherichia coli thioredoxin A. Both modules make extensive crystallographic contacts, contributing to a well-defined crystal lattice with clear electron density for both the thioredoxin and the Puf60-UHM module. We compare two short linker sequences between the two fusion domains, GSAM and GSPPM, for which only the GSAM-linked fusion protein yielded diffracting crystals. While specific interdomain contacts are not observed for both fusion proteins, NMR relaxation data in solution indicate reduced interdomain mobility between the Trx and Puf60-UHM modules. The GSPPM-linked fusion protein is significantly more flexible, albeit both linker sequences have the same number of degrees of torsional freedom. Our analysis provides a rationale for the crystallization of the GSAM-linked fusion protein and indicates that in this case, a four-residue linker between thioredoxin A and the fused target may represent the maximal length for crystallization purposes. Our data provide an experimental basis for the rational design of linker sequences in carrier-driven crystallization and identify thioredoxin A as a powerful fusion partner that can aid crystallization of difficult targets.

  2. Population Density Modeling Tool

    Science.gov (United States)

    2014-02-05

    194 POPULATION DENSITY MODELING TOOL by Davy Andrew Michael Knott David Burke 26 June 2012 Distribution...MARYLAND NAWCADPAX/TR-2012/194 26 June 2012 POPULATION DENSITY MODELING TOOL by Davy Andrew Michael Knott David Burke...Density Modeling Tool 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Davy Andrew Michael Knott David Burke 5d. PROJECT NUMBER

  3. Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping

    Science.gov (United States)

    Siemons, Wolter; Koster, Gertjan; Yamamoto, Hideki; Harrison, Walter A.; Lucovsky, Gerald; Geballe, Theodore H.; Blank, Dave H. A.; Beasley, Malcolm R.

    2007-05-01

    As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

  4. The carrier-generating analysis of MEMS gyroscope interface circuit

    Directory of Open Access Journals (Sweden)

    GuangMin Yuan

    2014-03-01

    Full Text Available In this paper, the main factors which influence the noise ratio of gyroscope output signal were analysed, according to the MEMS gyro interface circuit technology. A working principle of a carrier in the gyroscope circuit was discussed, the process formula of the carrier amplitude and frequency in the interface circuit of modulation and demodulation was deduced, and the error components lead-in from carrier to gyroscope circuit was distinguished. Several commonly used carrier-generating circuit schemes were analysed and compared, and a carrier-generating program in the interface circuits of the micro-gyroscope was designed, which was applied in a MEMS gyro developed by our laboratory. The measurement results show that the amplitude stability and frequency stability is 1.3 ppm and 12 ppm, respectively, meeting the performance requirements of carrier generating in the MEMS gyro circuit.

  5. The carrier-generating analysis of MEMS gyroscope interface circuit

    Science.gov (United States)

    Yuan, GuangMin; Yuan, Weizheng; Zhu, Xiaobo; Chang, HongLong

    2014-03-01

    In this paper, the main factors which influence the noise ratio of gyroscope output signal were analysed, according to the MEMS gyro interface circuit technology. A working principle of a carrier in the gyroscope circuit was discussed, the process formula of the carrier amplitude and frequency in the interface circuit of modulation and demodulation was deduced, and the error components lead-in from carrier to gyroscope circuit was distinguished. Several commonly used carrier-generating circuit schemes were analysed and compared, and a carrier-generating program in the interface circuits of the micro-gyroscope was designed, which was applied in a MEMS gyro developed by our laboratory. The measurement results show that the amplitude stability and frequency stability is 1.3 ppm and 12 ppm, respectively, meeting the performance requirements of carrier generating in the MEMS gyro circuit.

  6. Characteristics of participants in a gestational carrier program.

    Science.gov (United States)

    Braverman, A M; Corson, S L

    1992-08-01

    Genetic parents and gestational carriers in our gestational carrier program were evaluated by psychodiagnostic interview and by the Minnesota Multiphasic Personality Interview-2 (MMPI-2), a widely used objective psychological test, to identify psychopathology and describe personality characteristics. Overall, participants exhibited no overt psychopathology. Personality differences were found between gestational carriers and genetic mothers and genetic fathers and mothers. Clinical interviews revealed that gestational carriers tended to be the dominant partner in the relationship, were motivated by a wish to help an infertile couple, enjoyed being pregnant, showed narcissistic needs, and expressed a wish for secondary financial gain. The majority of gestational carriers stated that they had considered becoming a traditional surrogate but felt they could not surrender a child that was genetically theirs. These results indicate that there is not any predisposing psychopathology which attracts participants to the gestational carrier program.

  7. Suspended biofilm carrier and activated sludge removal of acidic pharmaceuticals

    DEFF Research Database (Denmark)

    Falås, Per; Baillon-Dhumez, Aude; Andersen, Henrik Rasmus

    2012-01-01

    Removal of seven active pharmaceutical substances (ibuprofen, ketoprofen, naproxen, diclofenac, clofibric acid, mefenamic acid, and gemfibrozil) was assessed by batch experiments, with suspended biofilm carriers and activated sludge from several full-scale wastewater treatment plants. A distinct...... and attached solids for the carriers) of diclofenac, ketoprofen, gemfibrozil, clofibric acid and mefenamic acid compared to the sludges. Among the target pharmaceuticals, only ibuprofen and naproxen showed similar removal rates per unit biomass for the sludges and biofilm carriers. In contrast...

  8. A Multi-Carrier Scheduling Algorithm for LTE-Advanced

    DEFF Research Database (Denmark)

    Vulpe, Alexander; Mihovska, Albena D.; Prasad, Ramjee

    2013-01-01

    LTE-Advanced aims to provide a transmission bandwidth of 100 MHz by using Carrier Aggregation to aggregate LTE Rel. 8 carriers. In order to increase the system capacity, resource allocation becomes a very good tool, and, in the context of the existence of multiple Component Carriers in LTE-Advanc......Net scenario) that respects the 3GPP specifications. Numerical results show that this algorithm has better performances than the traditional Round Robin and Proportionally Fair resource scheduling algorithms....

  9. A Silicon Micromachined Gyroscope Driven by the Rotating Carrier Self

    Institute of Scientific and Technical Information of China (English)

    Fuxue Zhang; Xu Mao; Yu Liu; Nan Zhang; Wei Zhang

    2006-01-01

    This paper reported a silicon micromachined gyroscope which is driven by the rotating carrier's angular velocity, the silicon was manufactured by anisotropy etching. The design, fabrication and packing of the sensing element were introduced in the paper. The imitation experimentation and performance test have certificated that the principle of the gyroscope is correct and the gyroscope can be used to sense yawing or pitching angular velocity of the rotating carrier, and the angular velocity of the rotating carrier itself.

  10. An evaluation of low-cost payload carrier

    Science.gov (United States)

    Yost, V. H.

    1980-01-01

    Payload carrier designed for space vehicles is essentially cargo carrier that supports, positions, and protects various equipment and materials used in conducting experiments in weightless space environment. Proposed carrier entitled Materials Experiment Assembly II (MEA-II) is considered superior to previously developed models in size, weight, and cost to user. Structure is lightweight with insulated exterior and can be custom sized to meet user needs.

  11. Hot carrier injection degradation under dynamic stress

    Institute of Scientific and Technical Information of China (English)

    Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue

    2011-01-01

    In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under Vg=0V and Vd = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

  12. Take advantage of your insurance carrier

    Energy Technology Data Exchange (ETDEWEB)

    Carlow, S.M.

    1990-02-01

    The primary objective of the developer of an independent energy facility is to make a profit through the sale of electricity and steam. The most effective way to achieve this objective is to design, build and operate a facility in a way that maximizes its availability and efficiency without increasing expenses. A property carrier has a range of insurance products and engineering services designed not only to transfer risk but to increase availability and efficiency and reduce the cost of operating and maintaining a facility. The independent energy producer can benefit by taking full advantage of traditional and specialty insurance products as well as engineering services that are available today. There is a whole range of insurance products that apply during the various stages of pre-construction, construction, testing and commercial operation, and these are described.

  13. Obstacle avoidance and path planning for carrier aircraft launching

    Directory of Open Access Journals (Sweden)

    Wu Yu

    2015-06-01

    Full Text Available Launching safety and efficiency are important indexes to measure the fighting capacity of carrier. The study on path planning for taxi of carrier aircraft launching under actual deck environment is of great significance. In actual deck scheduling, manual command is applied to taxi of carrier aircraft, which has negative effects on the safety of staff and carrier aircraft launching. In consideration of both the safety and efficiency of carrier aircraft launching, the key elements of the problem are abstracted based on the analysis of deck environment, carrier aircraft maneuver performance and task requirements. According to the problem description, the mathematical model is established including various constraints. The carrier aircraft and the obstacles are reasonably simplified as circle and polygons respectively. What’s more, the proposed collision detection model reduces the calculations. Aimed at the features of model, the theory of model predictive control (MPC is applied to the path search. Then a dynamic weight heuristic function is designed and a dynamic multistep optimization algorithm is proposed. Taking the Nimitz-class aircraft carrier as an example, the paths from parking place to catapult are planned, which indicate the rationality of the model and the effectiveness of the algorithm by comparing the planning results under different simulation environments. The main contribution of research is the establishment of obstacle avoidance and path planning model. In addition, it provides the solution of model and technological foundations for comprehensive command and real-time decision-making of the carrier aircraft.

  14. Density dependent neurodynamics.

    Science.gov (United States)

    Halnes, Geir; Liljenström, Hans; Arhem, Peter

    2007-01-01

    The dynamics of a neural network depends on density parameters at (at least) two different levels: the subcellular density of ion channels in single neurons, and the density of cells and synapses at a network level. For the Frankenhaeuser-Huxley (FH) neural model, the density of sodium (Na) and potassium (K) channels determines the behaviour of a single neuron when exposed to an external stimulus. The features of the onset of single neuron oscillations vary qualitatively among different regions in the channel density plane. At a network level, the density of neurons is reflected in the global connectivity. We study the relation between the two density levels in a network of oscillatory FH neurons, by qualitatively distinguishing between three regions, where the mean network activity is (1) spiking, (2) oscillating with enveloped frequencies, and (3) bursting, respectively. We demonstrate that the global activity can be shifted between regions by changing either the density of ion channels at the subcellular level, or the connectivity at the network level, suggesting that different underlying mechanisms can explain similar global phenomena. Finally, we model a possible effect of anaesthesia by blocking specific inhibitory ion channels.

  15. MEASUREMENT OF WHEAT DENSITY

    Institute of Scientific and Technical Information of China (English)

    冯跟胜; 党金春; 等

    1995-01-01

    A method used for on line determining the change of wheat density with a automatic watering machine in a lqarge flour mill has been studied.The results show that the higher distinguishing ability is obtained when using 241Am as a γ-ray source for measuring the wheat density than using 137Cs.

  16. Symmetry energy and density

    CERN Document Server

    Trautmann, Wolfgang; Russotto, Paolo

    2016-01-01

    The nuclear equation-of-state is a topic of highest current interest in nuclear structure and reactions as well as in astrophysics. In particular, the equation-of-state of asymmetric matter and the symmetry energy representing the difference between the energy densities of neutron matter and of symmetric nuclear matter are not sufficiently well constrained at present. The density dependence of the symmetry energy is conventionally expressed in the form of the slope parameter L describing the derivative with respect to density of the symmetry energy at saturation. Results deduced from nuclear structure and heavy-ion reaction data are distributed around a mean value L=60 MeV. Recent studies have more thoroughly investigated the density range that a particular observable is predominantly sensitive to. Two thirds of the saturation density is a value typical for the information contained in nuclear-structure data. Higher values exceeding saturation have been shown to be probed with meson production and collective ...

  17. Learning Grasp Affordance Densities

    DEFF Research Database (Denmark)

    Detry, Renaud; Kraft, Dirk; Kroemer, Oliver;

    2011-01-01

    We address the issue of learning and representing object grasp affordance models. We model grasp affordances with continuous probability density functions (grasp densities) which link object-relative grasp poses to their success probability. The underlying function representation is nonparametric...... these and records their outcomes. When a satisfactory number of grasp data is available, an importance-sampling algorithm turns these into a grasp density. We evaluate our method in a largely autonomous learning experiment run on three objects of distinct shapes. The experiment shows how learning increases success...... and relies on kernel density estimation to provide a continuous model. Grasp densities are learned and refined from exploration, by letting a robot “play” with an object in a sequence of graspand-drop actions: The robot uses visual cues to generate a set of grasp hypotheses; it then executes...

  18. Charge carrier recombination in the ITO/PEDOT:PSS/MEH-PPV/Al photodetector

    Directory of Open Access Journals (Sweden)

    Petrović Jovana P.

    2009-01-01

    Full Text Available In this paper we investigate charge carrier recombination processes in polymer based photodetector ITO/PEDOT:PSS/MEH-PPV/Al. The major carriers are the hole polarons created by the photoexcitation in the active MEH-PPV film. The model used in this paper is based on the continuity equation and drift-diffusion equation for hole polarons. We assume the Poole-Frenkel expression for field dependence of the hole polaron mobility. The internal quantum efficiency dependence on incident photon flux density, incident light wavelength and applied electric field is included in the model. The simulated photocurrent density spectra for two different, assumed, recombination mechanisms, linear (monomolecular and square (bimolecular is compared with our experimental results. The bimolecular recombination mechanism applied in our model is assumed to be of Langevin type. The agreement between the measured and the calculated data unambiguously indicate that the hole polaron recombination mechanism in the MEH-PPV film is bimolecular with bimolecular rate constant depending on the external electric field. For the established recombination mechanism the theoretical prediction of the photocurrent density spectra shows excellent agreement with the measured spectra in wide range of inverse bias voltages (from 0 to -8 V.

  19. Porous glass carrier for immobilization of brewer's yeast. Kobo koteika tantai to shite no takoshitsu garasu

    Energy Technology Data Exchange (ETDEWEB)

    Kashihara, T. (Kirin Brewery Co. Ltd., Tokyo (Japan))

    1993-07-01

    In this article, merits of porous glass carrier for immobilization are stated as an example of application of vital reaction catalyst for immobilization to the brewing field and furthermore the features of the brewing system of immobilization of yeast for beer brewing (super brew system, SBS) which utilizes the above carrier are outlined. The biggest merit of utilizing immobilized yeast for beer brewing is that increased efficiency of the brewing can be attained, but usable carriers for immobilization whose safety has been confirmed are very few. Since the latter half of 1980's, DEAE cellulose, porous glass and ceramics have been used as the carriers appropriate for the scale of practical brewing. Porous glass carriers have many functions including high percentage of water absorption and capability of holding microorganisms in high density. The number of fungus bodies to be carried with the porous glass is less than that of calcium alginate which is not appropriate for scaling-up for practical brewing. In SBS, fermentation can be made efficiently and in a well balanced manner. 15 refs., 5 figs., 4 tabs.

  20. Spectrotemporal modulation sensitivity for hearing-impaired listeners: dependence on carrier center frequency and the relationship to speech intelligibility.

    Science.gov (United States)

    Mehraei, Golbarg; Gallun, Frederick J; Leek, Marjorie R; Bernstein, Joshua G W

    2014-07-01

    Poor speech understanding in noise by hearing-impaired (HI) listeners is only partly explained by elevated audiometric thresholds. Suprathreshold-processing impairments such as reduced temporal or spectral resolution or temporal fine-structure (TFS) processing ability might also contribute. Although speech contains dynamic combinations of temporal and spectral modulation and TFS content, these capabilities are often treated separately. Modulation-depth detection thresholds for spectrotemporal modulation (STM) applied to octave-band noise were measured for normal-hearing and HI listeners as a function of temporal modulation rate (4-32 Hz), spectral ripple density [0.5-4 cycles/octave (c/o)] and carrier center frequency (500-4000 Hz). STM sensitivity was worse than normal for HI listeners only for a low-frequency carrier (1000 Hz) at low temporal modulation rates (4-12 Hz) and a spectral ripple density of 2 c/o, and for a high-frequency carrier (4000 Hz) at a high spectral ripple density (4 c/o). STM sensitivity for the 4-Hz, 4-c/o condition for a 4000-Hz carrier and for the 4-Hz, 2-c/o condition for a 1000-Hz carrier were correlated with speech-recognition performance in noise after partialling out the audiogram-based speech-intelligibility index. Poor speech-reception and STM-detection performance for HI listeners may be related to a combination of reduced frequency selectivity and a TFS-processing deficit limiting the ability to track spectral-peak movements.

  1. Inhomogeneities in charge carrier transport properties of Cu(In,Ga)Se{sub 2} solar-cells

    Energy Technology Data Exchange (ETDEWEB)

    Nichterwitz, Melanie; Kaufmann, Christian; Schock, Hans-Werner; Unold, Thomas [Helmholtz-Zentrum Berlin (Germany); Caballero, Raquel [Universidad Autonoma de Madrid (Spain)

    2012-07-01

    In this study, electron beam induced current (EBIC) in the cross section configuration is used to characterize charge carrier transport in Cu(In,Ga)Se{sub 2} (CIGSe)/CdS/ZnO solar-cells. It is shown that charge carrier transport properties are (i) generation dependent and (ii) grain specific, i.e. spatially inhomogeneous. Within some grains of the CIGSe absorber layer, the collected short circuit current is reduced significantly for electron beam irradiation such that there is no generation at the heterojunction. Charge carrier transport is generation dependent in these grains for all used electron beam currents, i.e. generation densities (low injection). In other grains however, charge carrier transport is only generation dependent for the highest used electron beam current. In conjunction with numerical simulations, these results are used to derive a model for the electronic band diagram of the heterojunction region of the solar cell. It is based on the assumption of (i) a thin layer with a high density ({approx}10{sup 17} cm{sup -3}) of deep acceptor type defect states (p{sup +} layer) and a lowered valence band maximum between the CIGSe and the CdS layer and (ii) donor type interface states at the p{sup +} layer/CdS interface of some grains.

  2. Effect of carrier and particle concentration on ultrasound properties of magnetic nanofluids.

    Science.gov (United States)

    Patel, Jay Kumar; Parekh, Kinnari

    2015-01-01

    Ultrasound wave propagation in nanofluids and its rheological behavior has been studied as a function of solid volume fraction, temperature and magnetic field for magnetic nanofluids synthesized in kerosene and transformer oil. Ultrasonic velocity decreases while viscosity increases with increasing volume fraction. The attenuation of ultrasonic wave is explained using dipolar coupling co-efficient which favors oligomer structures with increasing number density of particles. The structure formation increases further with increase in magnetic field which is prominent in transformer oil compared to kerosene. This difference can be due to the structural difference between these two carriers.

  3. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    Science.gov (United States)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  4. Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

    DEFF Research Database (Denmark)

    Buus, Jens; Danielsen, Magnus

    1977-01-01

    The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density...... through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal...

  5. Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

    Science.gov (United States)

    Derrien, Thibault J.-Y.; Krüger, Jörg; Itina, Tatiana E.; Höhm, Sandra; Rosenfeld, Arkadi; Bonse, Jörn

    2014-10-01

    The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and ˜4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay-dependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.

  6. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.

    2014-09-15

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  7. Characterization of the "Escherichia Coli" Acyl Carrier Protein Phosphodiesterase

    Science.gov (United States)

    Thomas, Jacob

    2009-01-01

    Acyl carrier protein (ACP) is a small essential protein that functions as a carrier of the acyl intermediates of fatty acid synthesis. ACP requires the posttranslational attachment of a 4'phosphopantetheine functional group, derived from CoA, in order to perform its metabolic function. A Mn[superscript 2+] dependent enzymatic activity that removes…

  8. Proposal for tutorial: Resilience in carrier Ethernet transport

    DEFF Research Database (Denmark)

    Berger, Michael Stübert; Wessing, Henrik; Ruepp, Sarah Renée

    2009-01-01

    This tutorial addresses how Carrier Ethernet technologies can be used in the transport network to provide resilience to the packet layer. Carrier Ethernet networks based on PBB-TE and T-MPLS/MPLS-TP are strong candidates for reliable transport of triple-play services. These technologies offer...

  9. Screening in crystalline liquids protects energetic carriers in hybrid perovskites

    Science.gov (United States)

    Zhu, Haiming; Miyata, Kiyoshi; Fu, Yongping; Wang, Jue; Joshi, Prakriti P.; Niesner, Daniel; Williams, Kristopher W.; Jin, Song; Zhu, X.-Y.

    2016-09-01

    Hybrid lead halide perovskites exhibit carrier properties that resemble those of pristine nonpolar semiconductors despite static and dynamic disorder, but how carriers are protected from efficient scattering with charged defects and optical phonons is unknown. Here, we reveal the carrier protection mechanism by comparing three single-crystal lead bromide perovskites: CH3NH3PbBr3, CH(NH2)2PbBr3, and CsPbBr3. We observed hot fluorescence emission from energetic carriers with ~102-picosecond lifetimes in CH3NH3PbBr3 or CH(NH2)2PbBr3, but not in CsPbBr3. The hot fluorescence is correlated with liquid-like molecular reorientational motions, suggesting that dynamic screening protects energetic carriers via solvation or large polaron formation on time scales competitive with that of ultrafast cooling. Similar protections likely exist for band-edge carriers. The long-lived energetic carriers may enable hot-carrier solar cells with efficiencies exceeding the Shockley-Queisser limit.

  10. Cardiac involvement in carriers of Duchenne and Becker muscular dystrophy

    NARCIS (Netherlands)

    Hoogerwaard, EM; van der Wouw, PA; Wilde, AAM; Bakker, E; Ippel, PF; Oosterwijk, JC; Majoor-Krakauer, DF; van Essen, AJ; Leschot, NJ; de Visser, M

    1999-01-01

    A cross-sectional study in a cohort of DNA proven carriers of Duchenne (DMD) and Becker (BMD) muscular dystrophy was undertaken with the following objectives: (1) to estimate the frequency of electrocardiographic (ECG) and echocardiographic abnormalities; (2) to establish the proportion of carriers

  11. Carriers of foot-and-mouth disease virus: a review

    NARCIS (Netherlands)

    Moonen, P.; Schrijver, R.

    2000-01-01

    This review describes current knowledge about persistent foot-and-mouth disease virus (FMDV) infections, the available methods to detect carrier animals, the properties of persisting virus, the immunological mechanisms, and the risk of transmission. In particular, knowledge about the carrier state,

  12. Spread Spectrum Modulation by Using Asymmetric-Carrier Random PWM

    DEFF Research Database (Denmark)

    Mathe, Laszlo; Lungeanu, Florin; Sera, Dezso;

    2012-01-01

    This paper presents a new fixed carrier frequency random PWM method, where a new type of carrier wave is proposed for modulation. Based on simulations and experimental measurements, it is shown that the spread effect of the discrete components from the motor current spectra and acoustic spectra i...

  13. Joint Iterative Carrier Synchronization and Signal Detection Employing Expectation Maximization

    DEFF Research Database (Denmark)

    Zibar, Darko; de Carvalho, Luis Henrique Hecker; Estaran Tolosa, Jose Manuel

    2014-01-01

    In this paper, joint estimation of carrier frequency, phase, signal means and noise variance, in a maximum likelihood sense, is performed iteratively by employing expectation maximization. The parameter estimation is soft decision driven and allows joint carrier synchronization and data detection...

  14. AQUASOMES: A NOVEL CARRIER FOR DRUG DELIVERY

    Directory of Open Access Journals (Sweden)

    Vishal Sutariya

    2012-03-01

    Full Text Available Nanobiopharmaceutics involves delivery of biopharmaceutical product through different biomaterials like multifunctional nanoparticles, quantum dots, aquasomes, superparamagnetic iron oxide crystals, and liposomes dendrimers. Nanotechnology has emerged fields of biomedical research in the last few decades the presents context is an attempt to present the brief information about nanobiotechnological applications. Aquasomes are nanoparticulate carrier system but instead of being simple nanoparticles these arse three layered self assembled structures, comprised of a solid phase nanocrystalline core coated with oligomeric film to which biochemically active molecules are adsorbed with or without modification. Aquasomes are spherical 60–300 nm particles used for drug and antigen delivery. Aquasomes discovery comprises a principle from microbiology, food chemistry, biophysics and many discoveries including solid phase synthesis, supramolecular chemistry, molecular shape change and self assembly. Three types of core materials are mainly used for producing aquasomes: tin oxide, nanocrystalline carbon ceramics (diamonds and brushite (calcium phosphate dihydrate. Calcium phosphate is the core of interest, owing to its natural presence in the body. The brushite is unstable and converts to hydroxyapatite upon prolong storage. Hydroxyapatite seems, therefore, a better core for the preparation of aquasomes. It is widely used for the preparation of implants for drug delivery. The solid core provides the structural stability, while the carbohydrate coating protects against dehydration and stabilizes the biochemically active molecules. This property of maintaining the conformational integrity of bioactive molecules has led to the proposal that aquasomes have potential as a carrier system for delivery of peptide, protein, hormones, antigens and genes to specific sites. Aquasome deliver their content through specific targeting, molecular sheiling and slow

  15. Carrier-dependent temporal processing in an auditory interneuron.

    Science.gov (United States)

    Sabourin, Patrick; Gottlieb, Heather; Pollack, Gerald S

    2008-05-01

    Signal processing in the auditory interneuron Omega Neuron 1 (ON1) of the cricket Teleogryllus oceanicus was compared at high- and low-carrier frequencies in three different experimental paradigms. First, integration time, which corresponds to the time it takes for a neuron to reach threshold when stimulated at the minimum effective intensity, was found to be significantly shorter at high-carrier frequency than at low-carrier frequency. Second, phase locking to sinusoidally amplitude modulated signals was more efficient at high frequency, especially at high modulation rates and low modulation depths. Finally, we examined the efficiency with which ON1 detects gaps in a constant tone. As reflected by the decrease in firing rate in the vicinity of the gap, ON1 is better at detecting gaps at low-carrier frequency. Following a gap, firing rate increases beyond the pre-gap level. This "rebound" phenomenon is similar for low- and high-carrier frequencies.

  16. Bombarding Cancer: Biolistic Delivery of therapeutics using Porous Si Carriers

    Science.gov (United States)

    Zilony, Neta; Tzur-Balter, Adi; Segal, Ester; Shefi, Orit

    2013-08-01

    A new paradigm for an effective delivery of therapeutics into cancer cells is presented. Degradable porous silicon carriers, which are tailored to carry and release a model anti-cancer drug, are biolistically bombarded into in-vitro cancerous targets. We demonstrate the ability to launch these highly porous microparticles by a pneumatic capillary gene gun, which is conventionally used to deliver cargos by heavy metal carriers. By optimizing the gun parameters e.g., the accelerating gas pressure, we have successfully delivered the porous carriers, to reach deep targets and to cross a skin barrier in a highly spatial resolution. Our study reveals significant cytotoxicity towards the target human breast carcinoma cells following the delivery of drug-loaded carriers, while administrating empty particles results in no effect on cell viability. The unique combination of biolistics with the temporal control of payload release from porous carriers presents a powerful and non-conventional platform for designing new therapeutic strategies.

  17. Intrinsic-Density Functionals

    CERN Document Server

    Engel, J

    2006-01-01

    The Hohenberg-Kohn theorem and Kohn-Sham procedure are extended to functionals of the localized intrinsic density of a self-bound system such as a nucleus. After defining the intrinsic-density functional, we modify the usual Kohn-Sham procedure slightly to evaluate the mean-field approximation to the functional, and carefully describe the construction of the leading corrections for a system of fermions in one dimension with a spin-degeneracy equal to the number of particles N. Despite the fact that the corrections are complicated and nonlocal, we are able to construct a local Skyrme-like intrinsic-density functional that, while different from the exact functional, shares with it a minimum value equal to the exact ground-state energy at the exact ground-state intrinsic density, to next-to-leading order in 1/N. We briefly discuss implications for real Skyrme functionals.

  18. Bone mineral density test

    Science.gov (United States)

    BMD test; Bone density test; Bone densitometry; DEXA scan; DXA; Dual-energy x-ray absorptiometry; p-DEXA; Osteoporosis-BMD ... need to undress. This scan is the best test to predict your risk of fractures. Peripheral DEXA ( ...

  19. Production of Solid sustainable Energy Carriers from biomass by means of TORrefaction (SECTOR)

    Energy Technology Data Exchange (ETDEWEB)

    Witt, Janet; Bienert, Kathrin [DBFZ Deutsches Biomasseforschungszentrum gemeinnuetzige GmbH, Leipzig (Germany). Bereich Bioenergiesysteme; Zwart, Robin; Kiel, Jaap; Englisch, Martin; Wojcik, Magdalena

    2012-07-01

    SECTOR is a large-scale European project with a strong consortium of over 20 partners from industry and science. The project is focussed on the further development of torrefaction-based technologies for the production of solid bioenergy carriers up to pilot-plant scale and beyond, and on supporting the market introduction of torrefaction-based bioenergy carriers as a commodity renewable solid fuel. The torrefaction of biomass materials is considered to be a very promising technology for the promotion of the large-scale implementation of bioenergy. During torrefaction biomass is heated up in the absence of oxygen to a temperature of 250-320 C. By combining torrefaction with pelletisation or briquetting, biomass materials can be converted into a high-energy-density commodity solid fuel or bioenergy carrier with improved behaviour in (long-distance) transport, handling and storage, and also with superior properties in many major end-use applications. Torrefaction has the potential to provide a significant contribution to an enlarged raw material portfolio for biomass fuel production inside Europe by including both agricultural and forestry biomass. In this way, the SECTOR project is expected to shorten the time-to-market of torrefaction technology and to promote market introduction within stringent sustainability boundary conditions. The European Union provides funding for this project within the Seventh Framework Programme. The project has a duration of 42 months and started in January 2012. (orig.)

  20. Polymer-Free Carbon Nanotube Thermoelectrics with Improved Charge Carrier Transport and Power Factor

    Energy Technology Data Exchange (ETDEWEB)

    Norton-Baker, Brenna; Ihly, Rachelle; Gould, Isaac E.; Avery, Azure D.; Owczarczyk, Zbyslaw R.; Ferguson, Andrew J.; Blackburn, Jeffrey L.

    2016-12-09

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have recently attracted attention for their promise as active components in a variety of optical and electronic applications, including thermoelectricity generation. Here we demonstrate that removing the wrapping polymer from the highly enriched s-SWCNT network leads to substantial improvements in charge carrier transport and thermoelectric power factor. These improvements arise primarily from an increase in charge carrier mobility within the s-SWCNT networks because of removal of the insulating polymer and control of the level of nanotube bundling in the network, which enables higher thin-film conductivity for a given carrier density. Ultimately, these studies demonstrate that highly enriched s-SWCNT thin films, in the complete absence of any accompanying semiconducting polymer, can attain thermoelectric power factors in the range of approximately 400 uW m-1K-2, which is on par with that of some of the best single-component organic thermoelectrics demonstrated to date.

  1. Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.H.; Fluegel, B.D.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. Femtosecond time-resolved pump/probe measurements indicate the possible existence of a two-phase CdS/CdSTe layer, rather than a continuously graded alloy layer at the CdTe/CdS interface. Complementary time-resolved photoluminescence (PL) measurements show that the photoexcited carriers are rapidly captured by deep-level defects. The temporal and density-dependent properties of the photoluminescence prove that the large Stokes shift of the PL relative to the band edge is due to strong phonon coupling to deep-level defects in CdS. The authors suggest that modifications in the CdS processing may enhance carrier collection efficiency in the blue spectral region.

  2. Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices

    Science.gov (United States)

    Lin, Y.; Wang, D.; Donetsky, D.; Belenky, G.; Hier, H.; Sarney, W. L.; Svensson, S. P.

    2014-09-01

    Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 77 K in the undoped SLS confirms a high material quality. In similarly-grown structures that were p-doped to N A = 6 × 1016 and 3 × 1017 cm-3, electron lifetimes of τ n = 45 ns and 8 ns were measured. The 6 × 1016 cm-3 doping level is a factor of 6 greater than the typical background doping level in long-wave infrared (LWIR) Ga-containing InAs/GaSb SLS with similar bandgap and electron lifetime. This suggests that LWIR photodetectors with InAs/InAsSb SLS absorbers can be designed with smaller minority carrier concentrations and diffusion dark current densities. A relatively slow decrease of the lifetime with doping suggests a minor role of Auger recombination in the studied Ga-free SLS at T = 77 K with p-doping up to mid-1017 cm-3 level.

  3. Carrier Lifetimes in a I I I -V -N Intermediate-Band Semiconductor

    Science.gov (United States)

    Heyman, J. N.; Schwartzberg, A. M.; Yu, K. M.; Luce, A. V.; Dubon, O. D.; Kuang, Y. J.; Tu, C. W.; Walukiewicz, W.

    2017-01-01

    We use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaPyAs1 -x -yNx . These measurements probe the electron populations in the conduction band, intermediate band, and valence band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 , we find that the electron population in the conduction band decays exponentially with a time constant τCB=23 ps . The electron population in the intermediate band exhibits bimolecular recombination with recombination constant r =2 ×10-8 cm3/s . In our experiment, an optical pump pulse excites electrons from the valence band to the intermediate and conduction bands, and the change in interband absorption due to absorption saturation and induced absorption is probed with a delayed white-light pulse. We model the optical properties of our samples using the band anticrossing model to extract carrier densities as a function of time. These results not only identify the short minority-carrier lifetime as a key factor affecting the performance of GaPyAs1 -x -yNx -based intermediate-band solar cells but also provide guidance on ways to address this issue.

  4. Optimized tracking of RF carriers with phase noise, including Pioneer 10 results

    Science.gov (United States)

    Vilnrotter, V. A.; Hurd, W. J.; Brown, D. H.

    1987-01-01

    The ability to track very weak signals from distant spacecraft is limited by the phase instabilities of the received signal and of the local oscillator employed by the receiver. These instabilities ultimately limit the minimum loop bandwidth that can be used in a phase-coherent receiver, and hence limit the ratio of received carrier power to noise spectral density which can be tracked phase coherently. A method is presented for near real time estimation of the received carrier phase and additive noise spectrum, and optimization of the phase locked loop bandwidth. The method was used with the breadboard Deep Space Network (DSN) Advanced Receiver to optimize tracking of very weak signals from the Pioneer 10 spacecraft, which is now more distant that the edge of the solar system. Tracking with bandwidths of 0.1 Hz to 1.0 Hz reduces tracking signal threshold and increases carrier loop signal to noise ratio (SNR) by 5 dB to 15 dB compared to the 3 Hz bandwidth of the receivers now used operationally in the DSN. This will enable the DSN to track Pioneer 10 until its power sources fails near the end of the century.

  5. Electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Heyu; Huang, Yuanhe, E-mail: yuanhe@bnu.edu.cn [College of Chemistry, Beijing Normal University, Beijing, 100875 (China); Bai, Hongcun [Key Laboratory of Energy Sources and Chemical Engineering, Ningxia University, Yinchuan, Ningxia 750021 (China)

    2015-07-15

    Structures, stabilities, electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons (GyNRs) with armchair and zigzag edges are investigated using the self-consistent field crystal orbital method based on density functional theory. It is found that the 1D GyNRs are more stable than the 2D 6,6,12-graphyne sheet in the view of the Gibbs free energy. The stabilities of these GyNRs decrease as their widths increase. The calculated band structures show that all these GyNRs are semiconductors and that dependence of band gaps on the ribbon width is different from different types of the GyNRs. The carrier mobility was calculated based on the deformation theory and effective mass approach. It is found that the carrier mobilities of these GyNRs can reach the order of 10{sup 5} cm{sup 2} V {sup –1}s{sup –1} at room temperature and are comparable to those of graphene NRs. Moreover, change of the mobilities with change of the ribbon width is quite different from different types of the GyNRs.

  6. Electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons

    Directory of Open Access Journals (Sweden)

    Heyu Ding

    2015-07-01

    Full Text Available Structures, stabilities, electronic properties and carrier mobilities of 6,6,12-graphyne nanoribbons (GyNRs with armchair and zigzag edges are investigated using the self-consistent field crystal orbital method based on density functional theory. It is found that the 1D GyNRs are more stable than the 2D 6,6,12-graphyne sheet in the view of the Gibbs free energy. The stabilities of these GyNRs decrease as their widths increase. The calculated band structures show that all these GyNRs are semiconductors and that dependence of band gaps on the ribbon width is different from different types of the GyNRs. The carrier mobility was calculated based on the deformation theory and effective mass approach. It is found that the carrier mobilities of these GyNRs can reach the order of 105 cm2 V –1s–1 at room temperature and are comparable to those of graphene NRs. Moreover, change of the mobilities with change of the ribbon width is quite different from different types of the GyNRs.

  7. Ultrafast carrier relaxation through Auger recombination in the topological insulator B i1.5S b0.5T e1.7S e1.3

    Science.gov (United States)

    Onishi, Yoshito; Ren, Zhi; Segawa, Kouji; Kaszub, Wawrzyniec; Lorenc, Maciej; Ando, Yoichi; Tanaka, Koichiro

    2015-02-01

    Ultrafast carrier dynamics have great significance for our understanding of the transport properties of the surface state in topological insulator (TI) materials. We report midinfrared pump-probe measurements on the intrinsic TI material B i1.5S b0.5T e1.7S e1.3 and show that the change in photoinduced reflectivity can be decomposed into a fast negative part and a slow positive part. Calculations of the dielectric function made at various carrier temperatures and densities reveal that the fast negative component corresponds to the disappearance of the phase-space filling effect due to hot carriers around the probe energy and the decay component corresponds to the recombination of carriers near the band edge. The ratio of the fast negative component to the slow positive component is larger in the excitations conducted at the higher carrier densities, which suggests that the carrier temperature increases through Auger recombination. A qualitative analysis using rate equations reinforces this assumption, so we conclude that Auger recombination is the main cause of the population relaxation at carrier densities higher than 1018c m-3 and that we determined the Auger coefficient for B i1.5S b0.5T e1.7S e1.3 as C =0.4 ×10-26c m6/s .

  8. The local mass density

    Science.gov (United States)

    Veeder, G. J.

    1974-01-01

    An improved mass-luminosity relation for faint main-sequence stars derived from recently revised masses for some faint double stars is presented. The total local mass density is increased to nearly 0.2 solar masses per cu pc. This estimate is as large as the mass density required by Oort's (1965) dynamical analysis of stellar motions perpendicular to the galactic plane if the mass is concentrated in a narrow layer.

  9. Clinical disease presentation and ECG characteristics of LMNA mutation carriers

    Science.gov (United States)

    Ollila, Laura; Nikus, Kjell; Holmström, Miia; Jalanko, Mikko; Jurkko, Raija; Kaartinen, Maija; Koskenvuo, Juha; Kuusisto, Johanna; Kärkkäinen, Satu; Palojoki, Eeva; Reissell, Eeva; Piirilä, Päivi; Heliö, Tiina

    2017-01-01

    Objective Mutations in the LMNA gene encoding lamins A and C of the nuclear lamina are a frequent cause of cardiomyopathy accounting for 5–8% of familial dilated cardiomyopathy (DCM). Our aim was to study disease onset, presentation and progression among LMNA mutation carriers. Methods Clinical follow-up data from 27 LMNA mutation carriers and 78 patients with idiopathic DCM without an LMNA mutation were collected. In addition, ECG data were collected and analysed systematically from 20 healthy controls. Results Kaplan-Meier analysis revealed no difference in event-free survival (death, heart transplant, resuscitation and appropriate implantable cardioverter-defibrillator therapy included as events) between LMNA mutation carriers and DCM controls (p=0.5). LMNA mutation carriers presented with atrial fibrillation at a younger age than the DCM controls (47 vs 57 years, p=0.003). Male LMNA mutation carriers presented with clinical manifestations roughly a decade earlier than females. In close follow-up non-sustained ventricular tachycardia was detected in 78% of LMNA mutation carriers. ECG signs of septal remodelling were present in 81% of the LMNA mutation carriers, 21% of the DCM controls and none of the healthy controls giving a high sensitivity and specificity for the standard ECG in distinguishing LMNA mutation carriers from patients with DCM and healthy controls. Conclusions Male LMNA mutation carriers present clinical manifestations at a younger age than females. ECG septal remodelling appears to distinguish LMNA mutation carriers from healthy controls and patients with DCM without LMNA mutations. PMID:28123761

  10. Metal-Organic Heat Carrier Nanofluids

    Energy Technology Data Exchange (ETDEWEB)

    McGrail, B. Peter; Thallapally, Praveen K.; Blanchard, Jeremy; Nune, Satish K.; Jenks, Jeromy WJ; Dang, Liem X.

    2013-09-01

    Nanofluids, dispersions of metal or oxide nanoparticles in a base working fluid, are being intensively studied due to improvements they offer in thermal properties of the working fluid. However, these benefits have been erratically demonstrated and proven impacts on thermal conductivity are modest and well described from long-established effective medium theory. In this paper, we describe a new class of metal-organic heat carrier (MOHC) nanofluid that offers potential for a larger performance boost in thermal vapor-liquid compression cycles. MOHCs are nanophase porous coordination solids designed to reversibly uptake the working fluid molecules in which the MOHCs are suspended. Additional heat can be extracted in a heat exchanger or solar collector from the endothermic enthalpy of desorption, which is then released as the nanofluid transits through a power generating device such as a turboexpander. Calculations for an R123 MOHC nanofluid indicated potential for up to 15% increase in power output. Capillary tube experiments show that liquid-vapor transitions occur without nanoparticle deposition on the tube walls provided entrance Reynolds number exceeds approximately 100.

  11. Drug Carrier for Photodynamic Cancer Therapy

    Directory of Open Access Journals (Sweden)

    Tilahun Ayane Debele

    2015-09-01

    Full Text Available Photodynamic therapy (PDT is a non-invasive combinatorial therapeutic modality using light, photosensitizer (PS, and oxygen used for the treatment of cancer and other diseases. When PSs in cells are exposed to specific wavelengths of light, they are transformed from the singlet ground state (S0 to an excited singlet state (S1–Sn, followed by intersystem crossing to an excited triplet state (T1. The energy transferred from T1 to biological substrates and molecular oxygen, via type I and II reactions, generates reactive oxygen species, (1O2, H2O2, O2*, HO*, which causes cellular damage that leads to tumor cell death through necrosis or apoptosis. The solubility, selectivity, and targeting of photosensitizers are important factors that must be considered in PDT. Nano-formulating PSs with organic and inorganic nanoparticles poses as potential strategy to satisfy the requirements of an ideal PDT system. In this review, we summarize several organic and inorganic PS carriers that have been studied to enhance the efficacy of photodynamic therapy against cancer.

  12. Is metal nanofluid reliable as heat carrier?

    Science.gov (United States)

    Nine, Md J; Chung, Hanshik; Tanshen, Md Riyad; Osman, N A B Abu; Jeong, Hyomin

    2014-05-30

    A pre- and post experimental analysis of copper-water and silver-water nanofluids are conducted to investigate minimal changes in quality of nanofluids before and after an effective heat transfer. A single loop oscillating heat pipe (OHP) having inner diameter of 2.4mm is charged with aforementioned nanofluids at 60% filling ratio for end to end heat transfer. Post experimental analysis of both nanofluids raises questions to the physical, chemical and thermal stability of such suspension for hazardless uses in the field of heat transfer. The color, deposition, dispersibility, propensity to be oxidized, disintegration, agglomeration and thermal conductivity of metal nanofluids are found to be strictly affected by heat transfer process and vice versa. Such degradation in quality of basic properties of metal nanofluids implies its challenges in practical application even for short-term heat transfer operations at oxidative environment as nano-sized metal particles are chemically more unstable than its bulk material. The use of the solid/liquid suspension containing metal nanoparticles in any heat exchanger as heat carrier might be detrimental to the whole system.

  13. POLYURETHANE COMPOSITES AS DRUG CARRIERS:: RELEASE PATTERNS

    Directory of Open Access Journals (Sweden)

    M. V. Grigoreva

    2013-10-01

    Full Text Available Biodegradable polyurethanes attract interest of those developing composite materials for biomedical applications. One of their features is their ability to serve as carriers, or matrixes, for medicines and other bioactive compounds to produce a therapeutic effect in body through targeted and/or prolonged delivery of these compounds in the process of their controlled release from matrix. The review presents polyurethane composites as matrices for a number of drugs. The relation between structure of the composites and their degradability both in vitro and in vivo and the dependence of drug release kinetics on physicochemical properties of polyurethane matrix are highlighted. The release of drugs (cefazolin, naltrexone and piroxicam from the composites based on cross-linked polyurethanes (synthesized from laprols, Mw between 1,500 and 2,000 Da and toluylene diisocyanate demonstrated more or less the same pattern (about 10 days in vitro and three to five days in vivo. In contrast, the composites with dioxydine based on a linear polyurethanes (synthesized from oligotetramethilene glycol, Mw 1,000 Da, diphenylmethane-4,4’-diisocyanate and 1,4-butanediol retained their antimicrobial activity at least 30 days. They also showed a significantly higher breaking strength as compared to that of the composites based on cross-linked polyurethanes.

  14. Hydroxyapatite Nanoparticles as a Novel Gene Carrier

    Science.gov (United States)

    Zhu, S. H.; Huang, B. Y.; Zhou, K. C.; Huang, S. P.; Liu, F.; Li, Y. M.; Xue, Z. G.; Long, Z. G.

    2004-06-01

    Hydroxyapatite crystalline nanoparticles were created by a precipitation hydrothermal technique and the majority of crystal particles were in the size range of 40-60nm and exhibited a colloidal feature when suspended in water. The gastric cancer SGC-7901 cell line cells were cultivated in the presence of10-100 μg ml-1 hydroxyapatite nanoparticle suspension and verified by MTT evaluation for their biocompatibility in vitro. The agarose gel electrophoresis analysis demonstrated that the HA nanoparticles potentially adsorb the green fluorescence protein EGFP-N1 plasmid DNA at pH 2 and 7, but not at pH 12. The DNA-nanoparticle complexes transfected EGFP-N1 pDNA into SGC-7901 cells in vitro with the efficiency about 80% as referenced with Lipofectmine TM 2000. In vivo animal experiment revealed no acute toxic adverse effect 2weeks after tail vein injection into mice, and TEM examination demonstrated their biodistribution and expression within the cytoplasm and also a little in the nuclei of the liver, kidney and brain tissue cells. These results suggest that the HA nanoparticle is a promising material that can be used as gene carrier, vectors.

  15. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun [Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China); Leung, Benjamin; Han, Jung [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Yang, Fann-Wei [Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China); Wang, Hsiang-Chen [Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)

    2015-07-28

    Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

  16. Characterization of temperature-dependent carrier transport in disordered indium-tin-oxide/poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate)/polyfluorene/Ca/Al polymer structures

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Joe-Air [Department of Bio-Industrial Mechatronics Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Wang, Jen-Cheng; Fang, Chia-Hui [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Wu, Ya-Fen [Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gongzhuan Road, Taishan Dist., New Taipei City 243, Taiwan (China); Teng, Jen-Wei; Chen, Yu-Ting [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Fan, Ping-Lin [Department of Digital Technology Design and Graduate School of Toy and Game Design, National Taipei University of Education, No. 134, Sec. 2, Heping E. Road, Taipei 106, Taiwan (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China)

    2011-04-29

    The temperature-dependent electrical characteristics of polyfluorene-based polymer structures over a temperature range from 200 to 300 K are systematically investigated in this study. Initially, using the definitions of the Berthelot-type model, it is found that the sample exhibits a higher Berthelot-type temperature T{sub B} with high driving voltage, indicating that carrier transport in a disordered system manifests Berthelot-type behaviors. The ideal current density-voltage curve for the polymer structures given the carrier transmit mechanism is further elucidated by taking into account the ohmic conduction, trap charge limited current, and Mott and Gurney model of space charge limited current. The proposed procedure is simple and can be used to characterize the material with reasonable accuracy. We also study the density of the traps H{sub t}, and the characteristic energy of the distribution E{sub t} to better understand the carrier-transport process in organic materials and structures.

  17. 75 FR 38423 - Minimum Levels of Financial Responsibility for Motor Carriers

    Science.gov (United States)

    2010-07-02

    ... Federal Motor Carrier Safety Administration 49 CFR Part 387 RIN 2126-AB05 Minimum Levels of Financial Responsibility for Motor Carriers AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Final... for motor carriers to allow Canada-domiciled motor carriers and freight forwarders to maintain,...

  18. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    Science.gov (United States)

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    values extracted from OPTP measurements and their dependence on perovskite composition and morphology. The significance of the reviewed charge-carrier recombination and mobility parameters is subsequently evaluated in terms of the charge-carrier diffusion lengths and radiative efficiencies that may be obtained for such hybrid perovskites. We particularly focus on calculating such quantities in the limit of ultra-low trap-related recombination, which has not yet been demonstrated but could be reached through further advances in material processing. We find that for thin films of hybrid lead iodide perovskites with typical charge-carrier mobilities of ∼30cm(2)/(V s), charge-carrier diffusion lengths at solar (AM1.5) irradiation are unlikely to exceed ∼10 μm even if all trap-related recombination is eliminated. We further examine the radiative efficiency for hybrid lead halide perovskite films and show that if high efficiencies are to be obtained for intermediate charge-carrier densities (n ≈ 10(14) cm(-3)) trap-related recombination lifetimes will have to be enhanced well into the microsecond range.

  19. 自旋极化度对GaAs量子阱中吸收饱和效应与载流子复合动力学的影响研究%Effects of spin p olarization on absorption saturation and recombination dynamics of carriers in (001) GaAs quantum wells

    Institute of Scientific and Technical Information of China (English)

    方少寅; 陆海铭; 赖天树

    2015-01-01

    In this paper, the ultrafast dynamics of spin relaxation and recombination of photoexcited carriers has been studied in (001) GaAs quantum wells using a time-resolved pump-probe absorption spectroscopy under a nearly resonant excitation of heavy-hole excitons. It is found that the spin polarization of carriers influences both absorption saturation of linear polarized light and recombination dynamics of carriers. Pump fluence dependence of the ultrafast dynamics of spin relaxation and recombination of carriers is further studied, which shows that the effect of spin polarization on linearly polarized absorption saturation is reduced with lowering pump fluence. Spin-polarization-dependent absorption saturation effect can be ignored only as the pump fluence is weak. However, spin-polarization dependence of recombination dynamics is presented in turn at low pump fluence. Our analysis shows that such dependence originates from the spinpolarization dependence of the density of excitons formed in the excited carriers because recombination time constants of excitons and free carriers are very different so that the ratio of exciton density to free carrier density can influence the recombination dynamics. The spin-polarization dependence of ultrafast recombination dynamics of photoexcited carriers implies that the recombination time constant in the calculation of spin relaxation time from spin relaxation dynamics should be the recombination time of spin-polarized carriers, rather than the recombination lifetime of non-spin-polarized carriers as done currently. Exciton density is estimated based on 2D mass action law, which agrees very well with our experimental results. The good agreement between theoretical calculation and experimental results reveals that the effect of Coulomb screening on the formation of excitons may be ignored for a lower excited carrier density.

  20. High Density Matter

    Directory of Open Access Journals (Sweden)

    Stone J.R.

    2013-12-01

    Full Text Available The microscopic composition and properties of matter at super-saturation densities have been the subject of intense investigation for decades. The scarcity of experimental and observational data has led to the necessary reliance on theoretical models. There remains great uncertainty in these models which, of necessity, have to go beyond the over-simple assumption that high density matter consists only of nucleons and leptons. Heavy strange baryons, mesons and quark matter in different forms and phases have to be included to fulfil basic requirements of fundamental laws of physics. In this contribution latest developments in construction of the Equation of State (EoS of high-density matter at zero and finite temperature assuming different composition of matter will be discussed. Critical comparison of model EoS with available experimental data from heavy ion collisions and observations on neutron stars, including gravitational mass, radii and cooling patterns and data on X-ray burst sources and low mass X-ray binaries are made. Fundamental differences between the EoS of low-density, high temperature matter, such as is created in heavy ion collisions and of high-density, low temperature compact objects is discussed.

  1. Analysis of Ionospheric Delay Estimates from GNSS Carrier Phase Measurements

    Science.gov (United States)

    Gao, Yang

    2016-07-01

    There is an increased demand for more precise ionospheric information such as ionospheric augmentation for fast ambiguity convergence and resolution in real-time kinematic (RTK) and precise point positioning (PPP). More precise ionospheric information is also highly desired to improve the understanding of the space weather dynamics and its impacts on various applications such as aviation and communication systems. Carrier phase measurements from GNSS offer the best precision for precise applications. Current ionospheric models, however, are mostly derived from code or carrier-smoothed code measurements. Ionopsheric models based on carrier phase measurements are expected to provide improved accuracy and should be investigated. In this contribution, various data analyses will be conducted on ionospheric estimates from carrier phase measurements. Since carrier phase measurements are ambiguous and they are also affected by fractional biases, proper observation model is necessary and will be developed. With proper observation model, the analysis results are used to investigate the differences and characteristics of the ionospheric estimates between the code and carrier phase derived estimates and subsequently to help develop methods for precise estimation of the biases in carrier phase measurements and the recovery of the ionospheric effects. Data acquired at different geographic locations and under different ionospheric conditions will be processed for numerical analysis.

  2. An Efficient Inter Carrier Interference Cancellation Schemes for OFDM Systems

    Directory of Open Access Journals (Sweden)

    B. Sathish Kumar

    2009-12-01

    Full Text Available Orthogonal Frequency Division Multiplexing (OFDM has recently been used widely in wireless communication systems. OFDM is very effective in combating inter-symbol interference and can achieve high data rate in frequency selective channel. For OFDM communication systems, the frequency offsets in mobile radio channels distort the orthogonality between subcarriers resulting in Inter Carrier Interference (ICI. ICI causes power leakage among subcarriers thus degrading the system performance. A well-known problem of OFDM is its sensitivity to frequency offset between the transmitted and received carrier frequencies. There are two deleterious effects caused by frequency offset one is the reduction of signal amplitude in the output of the filters matched to each of the carriers and the second is introduction of ICI from the other carriers. This research work investigates three effective methods for combating the effects of ICI: ICI Self Cancellation (SC, Maximum Likelihood (ML estimation, and Extended Kalman Filter (EKF method. These three methods are compared in terms of bit error rate performance and bandwidth efficiency. Through simulations, it is shown that the three techniques are effective in mitigating the modulation schemes, the ML and EKF methods perform better than the SC method.Keywords- Orthogonal frequency Division Multiplexing (OFDM; Inter Carrier Interference(ICI; Carrier to Interference Power Ratio (CIR;Self Cancellation(SC;Carrier Frequency Offset (CFO; Maximum Likelihood(ML; Extended Kalman Filtering(EKF.

  3. Continuous GPS Carrier-Phase Time Transfer

    Science.gov (United States)

    Yao, Jian

    Time transfer (TT) is the process of transmitting a timing signal from one place to another place. It has applications to the formation and realization of Coordinated Universal Time (UTC), telecommunications, electrical power grids, and even stock exchanges. TT is the actual bottleneck of the UTC formation and realization since the technology of atomic clocks is almost always ahead of that of TT. GPS carrier-phase time transfer (GPSCPTT), as a mainstream TT technique accepted by most national timing laboratories, has suffered from the day-boundary-discontinuity (day-BD) problem for many years. This makes us difficult to observe a remote Cesium fountain clock behavior even after a few days. We find that day-BD comes from the GPS code noise. The day-BD can be lowered by ˜40% if more satellite-clock information is provided and if a few GPS receivers at the same station are averaged. To completely eliminate day-BD, the RINEX-Shift (RS) and revised RS (RRS) algorithms have been designed. The RS/RRS result matches the two-way satellite time/frequency transfer (TWSTFT) result much better than the conventional GPSCPTT result. With the RS/RRS algorithm, we are able to observe a remote Cesium fountain after half a day. We also study the BD due to GPS data anomalies (anomaly-BD). A simple curve-fitting strategy can eliminate the anomaly-BD. Thus, we achieve continuous GPSCPTT after eliminating both day-BD and anomaly-BD.

  4. Novel Anti-Nicotine Vaccine Using a Trimeric Coiled-Coil Hapten Carrier.

    Directory of Open Access Journals (Sweden)

    Keith D Miller

    Full Text Available Tobacco addiction represents one of the largest public health problems in the world and is the leading cause of cancer and heart disease, resulting in millions of deaths a year. Vaccines for smoking cessation have shown considerable promise in preclinical models, although functional antibody responses induced in humans are only modestly effective in preventing nicotine entry into the brain. The challenge in generating serum antibodies with a large nicotine binding capacity is made difficult by the fact that this drug is non-immunogenic and must be conjugated as a hapten to a protein carrier. To circumvent the limitations of traditional carriers like keyhole limpet hemocyanin (KLH, we have synthesized a short trimeric coiled-coil peptide (TCC that creates a series of B and T cell epitopes with uniform stoichiometry and high density. Here we compared the relative activities of a TCC-nic vaccine and two control KLH-nic vaccines using Alum as an adjuvant or GLA-SE, which contains a synthetic TLR4 agonist formulated in a stable oil-in-water emulsion. The results showed that the TCC's high hapten density correlated with a better immune response in mice as measured by anti-nicotine Ab titer, affinity, and specificity, and was responsible for a reduction in anti-carrier immunogenicity. The Ab responses achieved with this synthetic vaccine resulted in a nicotine binding capacity in serum that could prevent >90% of a nicotine dose equivalent to three smoked cigarettes (0.05 mg/kg from reaching the brain.

  5. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhenrui [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)]. E-mail: yinaoep@yahoo.mx; Aceves, Mariano [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico); Carrillo, Jesus [CIDS, BUAP, Puebla, Pue. (Mexico); Lopez-Estopier, Rosa [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)

    2006-12-05

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V {sub T}. When the applied voltage is smaller than V {sub T}, the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V {sub T}, the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained.

  6. Distribution of charge carriers in dissipative structure of semiconductors

    CERN Document Server

    Kamilov, I K; Kovalev, A S

    2002-01-01

    It has been shown experimentally that redistribution of the charge carrier concentration takes place in the volume of Te and InSb monocrystals under formation and excitation by the strong field of a dissipative structure in nonequilibrium electron-hole plasma. This leads to a situation when the presence of only longitudinal autosolitons in the dissipative structure reduces the charge carrier concentration outside autosolitons while the presence of only transversal autosolitons makes the charge carriers concentration larger. These effects are explained in the following manner: longitudinal autosolitons, occurring in nonequilibrium electron-hole plasma created by the Joule heating are considered as cold and transversal autosolitons are considered as hot ones

  7. Laccase immobilized on magnetic carriers for biotechnology applications

    Energy Technology Data Exchange (ETDEWEB)

    Rotkova, Jana [Department of Biological and Biochemical Sciences, University of Pardubice, Strossova 239, 530 03 Pardubice (Czech Republic); Sulakova, Romana [Department of Technology of Organic Compounds, Doubravice 41, 533 53 Pardubice (Czech Republic); Korecka, Lucie; Zdrazilova, Pavla; Jandova, Miroslava [Department of Biological and Biochemical Sciences, University of Pardubice, Strossova 239, 530 03 Pardubice (Czech Republic); Lenfeld, Jiri; Horak, Daniel [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovskeho nam. 2, 162 06 Praha (Czech Republic); Bilkova, Zuzana [Department of Biological and Biochemical Sciences, University of Pardubice, Strossova 239, 530 03 Pardubice (Czech Republic)], E-mail: Zuzana.Bilkova@upce.cz

    2009-05-15

    Laccase catalyzing the oxidation of p-diphenols has been applied in many industrial and biotechnology areas. Immobilized form of laccase has overcome the problem with contamination of the final product. Nevertheless sensitive enzymes immobilized to the matrix can be inactivated by the environmental conditions. The aim of this research was to prepare carrier with improved activity and responsible stability even under extreme reaction conditions. Laccase immobilized through carbohydrate moieties on magnetic hydrazide bead cellulose with a final activity of 0.63 I.U./1 ml of settled carrier confirmed that carriers with oriented immobilized enzyme might be useful in routine biocatalytic applications.

  8. Enhanced Uplink Carrier Aggregation for LTE-Advanced Femtocells

    DEFF Research Database (Denmark)

    Garcia, Luis Guilherme Uzeda; Sanchez-Moya, Fernando; Villalba-Espinosa, Juan;

    2011-01-01

    In this paper we investigate uplink carrier aggregation in the context of dense residential deployments of LTE-Advanced Femtocells. Previous work in the literature based on macro-cells suggested considering UE power limitations to infer which UEs should be allowed to employ multiple component...... carriers. However, due to the very small radius of femtocells, UEs are not expected to become power-limited at all. We propose a decentralized scheme with limited signalling requirements that incorporates power control information, not only to guide the UE-specific carrier selection procedure, but also...

  9. Wafer-scale characterization of carrier dynamics in graphene

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Petersen, Dirch Hjorth; Bøggild, Peter

    2015-01-01

    The electronic properties of single-layer graphene, such as surface conductance, carrier concentration, scattering time and mobility, can be characterized in a noncontact manner by THz time-domain spectroscopy. Standard spectroscopic imaging reveals the AC conductance over large areas with a few...... hundred μm resolution, and spectroscopic imaging on back-gated graphene allows for extraction of both the carrier concentration and the mobility. We find that spatial variations of the conductance of single-layer CVD-grown graphene are predominantly due to variations in mobility rather than in carrier...

  10. Recent advances in topical formulation carriers of antifungal agents.

    Science.gov (United States)

    Bseiso, Eman Ahmed; Nasr, Maha; Sammour, Omaima; Abd El Gawad, Nabaweya A

    2015-01-01

    Fungal infections are amongst the most commonly encountered diseases affecting the skin. Treatment approaches include both topical and oral antifungal agents. The topical route is generally preferred due to the possible side effects of oral medication. Advances in the field of formulation may soon render outdated conventional products such as creams, ointments and gels. Several carrier systems loaded with antifungal drugs have demonstrated promising results in the treatment of skin fungal infections. Examples of these newer carriers include micelles, lipidic systems such as solid lipid nanoparticles and nanostructured lipid carriers, microemulsions and vesicular systems such as liposomes, niosomes, transfersomes, ethosomes, and penetration enhancer vesicles.

  11. Recent advances in topical formulation carriers of antifungal agents

    Directory of Open Access Journals (Sweden)

    Eman Ahmed Bseiso

    2015-01-01

    Full Text Available Fungal infections are amongst the most commonly encountered diseases affecting the skin. Treatment approaches include both topical and oral antifungal agents. The topical route is generally preferred due to the possible side effects of oral medication. Advances in the field of formulation may soon render outdated conventional products such as creams, ointments and gels. Several carrier systems loaded with antifungal drugs have demonstrated promising results in the treatment of skin fungal infections. Examples of these newer carriers include micelles, lipidic systems such as solid lipid nanoparticles and nanostructured lipid carriers, microemulsions and vesicular systems such as liposomes, niosomes, transfersomes, ethosomes, and penetration enhancer vesicles.

  12. Autonomous Component Carrier Selection for 4G Femtocells

    DEFF Research Database (Denmark)

    Garcia, Luis Guilherme Uzeda; Kovacs, Istvan; Pedersen, Klaus;

    2012-01-01

    main contribution in this paper, denominated Generalized Autonomous Component Carrier Selection (G-ACCS), is a distributed carrier-based inter-cell interference coordination scheme that represents one step towards cognitive radio networks. The algorithm relies on expected rather than sensed...... interference coupling. This work focuses on the downlink and also provides an extensive characterization of the network performance as a function of the topology as well as the often overlooked temporal traits of traffic. We compare G-ACCS with other carrier-based solutions, including the simplest universal...

  13. Holographic charge density waves

    CERN Document Server

    Donos, Aristomenis

    2013-01-01

    We show that strongly coupled holographic matter at finite charge density can exhibit charge density wave phases which spontaneously break translation invariance while preserving time-reversal and parity invariance. We show that such phases are possible within Einstein-Maxwell-dilaton theory in general spacetime dimensions. We also discuss related spatially modulated phases when there is an additional coupling to a second vector field, possibly with non-zero mass. We discuss how these constructions, and others, should be associated with novel spatially modulated ground states.

  14. Holographic charge density waves

    Science.gov (United States)

    Donos, Aristomenis; Gauntlett, Jerome P.

    2013-06-01

    We show that strongly coupled holographic matter at finite charge density can exhibit charge density wave phases which spontaneously break translation invariance while preserving time-reversal and parity invariance. We show that such phases are possible within Einstein-Maxwell-dilaton theory in general spacetime dimensions. We also discuss related spatially modulated phases when there is an additional coupling to a second vector field, possibly with nonzero mass. We discuss how these constructions, and others, should be associated with novel spatially modulated ground states.

  15. Holographic Magnetisation Density Waves

    CERN Document Server

    Donos, Aristomenis

    2016-01-01

    We numerically construct asymptotically $AdS$ black brane solutions of $D=4$ Einstein theory coupled to a scalar and two $U(1)$ gauge fields. The solutions are holographically dual to $d=3$ CFTs in a constant external magnetic field along one of the $U(1)$'s. Below a critical temperature the system's magnetisation density becomes inhomogeneous, leading to spontaneous formation of current density waves. We find that the transition can be of second order and that the solutions which minimise the free energy locally in the parameter space of solutions have averaged stressed tensor of a perfect fluid.

  16. Density matrix perturbation theory.

    Science.gov (United States)

    Niklasson, Anders M N; Challacombe, Matt

    2004-05-14

    An orbital-free quantum perturbation theory is proposed. It gives the response of the density matrix upon variation of the Hamiltonian by quadratically convergent recursions based on perturbed projections. The technique allows treatment of embedded quantum subsystems with a computational cost scaling linearly with the size of the perturbed region, O(N(pert.)), and as O(1) with the total system size. The method allows efficient high order perturbation expansions, as demonstrated with an example involving a 10th order expansion. Density matrix analogs of Wigner's 2n+1 rule are also presented.

  17. Density Distribution Sunflower Plots

    OpenAIRE

    Dupont, William D; W. Dale Plummer Jr.

    2003-01-01

    Density distribution sunflower plots are used to display high-density bivariate data. They are useful for data where a conventional scatter plot is difficult to read due to overstriking of the plot symbol. The x-y plane is subdivided into a lattice of regular hexagonal bins of width w specified by the user. The user also specifies the values of l, d, and k that affect the plot as follows. Individual observations are plotted when there are less than l observations per bin as in a conventio...

  18. Nuclear level density predictions

    Directory of Open Access Journals (Sweden)

    Bucurescu Dorel

    2015-01-01

    Full Text Available Simple formulas depending only on nuclear masses were previously proposed for the parameters of the Back-Shifted Fermi Gas (BSFG model and of the Constant Temperature (CT model of the nuclear level density, respectively. They are now applied for the prediction of the level density parameters of all nuclei with available masses. Both masses from the new 2012 mass table and from different models are considered and the predictions are discussed in connection with nuclear regions most affected by shell corrections and nuclear structure effects and relevant for the nucleosynthesis.

  19. 78 FR 71708 - Sunshine Act Meeting; Unified Carrier Registration Plan Board of Directors

    Science.gov (United States)

    2013-11-29

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF TRANSPORTATION Federal Motor Carrier Safety Administration Sunshine Act Meeting; Unified Carrier Registration Plan Board of Directors AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice...

  20. 78 FR 77773 - Sunshine Act Meetings; Unified Carrier Registration Plan Board of Directors

    Science.gov (United States)

    2013-12-24

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF TRANSPORTATION Federal Motor Carrier Safety Administration Sunshine Act Meetings; Unified Carrier Registration Plan Board of Directors AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT. ACTION: Notice...

  1. Polarizable Density Embedding

    DEFF Research Database (Denmark)

    Olsen, Jógvan Magnus Haugaard; Steinmann, Casper; Ruud, Kenneth;

    2015-01-01

    We present a new QM/QM/MM-based model for calculating molecular properties and excited states of solute-solvent systems. We denote this new approach the polarizable density embedding (PDE) model and it represents an extension of our previously developed polarizable embedding (PE) strategy. The PD...

  2. Energy in density gradient

    Energy Technology Data Exchange (ETDEWEB)

    Vranjes, J., E-mail: jvranjes@yahoo.com [Instituto de Astrofísica de Canarias, 38205 La Laguna, Tenerife (Spain); Departamento de Astrofísica, Universidad de La Laguna, 38205 La Laguna, Tenerife (Spain); Kono, M., E-mail: kono@fps.chuo-u.ac.jp [Faculty of Policy Studies, Chuo University, Tokyo (Japan)

    2015-01-15

    Inhomogeneous plasmas and fluids contain energy stored in inhomogeneity and they naturally tend to relax into lower energy states by developing instabilities or by diffusion. But the actual amount of energy in such inhomogeneities has remained unknown. In the present work, the amount of energy stored in a density gradient is calculated for several specific density profiles in a cylindrical configuration. This is of practical importance for drift wave instability in various plasmas, and, in particular, in its application in models dealing with the heating of solar corona because the instability is accompanied with stochastic heating, so the energy contained in inhomogeneity is effectively transformed into heat. It is shown that even for a rather moderate increase of the density at the axis in magnetic structures in the corona by a factor 1.5 or 3, the amount of excess energy per unit volume stored in such a density gradient becomes several orders of magnitude greater than the amount of total energy losses per unit volume (per second) in quiet regions in the corona. Consequently, within the life-time of a magnetic structure such energy losses can easily be compensated by the stochastic drift wave heating.

  3. Density of Gabor Frames

    DEFF Research Database (Denmark)

    Christensen, Ole; Heil, Christopher; Deng, Baiqiao

    1999-01-01

    Beurling densities of Lambda = boolean ORk=1r Lambda(k) satisfy D- (Lambda) greater than or equal to 1 and D+(Lambda) Ramanathan and Steger. Additionally, we prove the conjecture that no collection boolean ORk=1r {g(k)(x - a)}(a is an element of Gamma k) of pure...

  4. A New Improved Variable Frequency Triangular Carrier-PWM with MOPSO Algorithm for Carrier Based PWM Techniques in Inverters

    Directory of Open Access Journals (Sweden)

    Mohammad Sadegh Orfi Yegane

    2017-02-01

    Full Text Available This paper investigates multi-carrier PWM methods in multi-level inverters. Two new MCPWM methods are introduced. This study proposes a new optimized MCPWM method to improve the output voltage characteristics like THD and LOH. The proposed method is based on variable frequency with a specific range. It means each carrier wave has a determined frequency. It is calling Variable Frequency Triangular Carrier-PWM. MOPSO algorithm is used to optimize the answers. This work considers some different levels of inverters like five, seven and nine levels. The results are compared with SPWM method.

  5. Aging in Fragile X Premutation Carriers.

    Science.gov (United States)

    Lozano, Reymundo; Saito, Naomi; Reed, Dallas; Eldeeb, Marwa; Schneider, Andrea; Hessl, David; Tassone, Flora; Beckett, Laurel; Hagerman, Randi

    2016-10-01

    It is now recognized that FMR1 premutation carriers (PC) are at risk to develop a range of neurological, psychiatric, and immune-mediated disorders during adulthood. There are conflicting findings regarding the incidence of hypertension, hypothyroidism, diabetes, and cancer in these patients that warrant further study. A retrospective controlled study was performed in a convenience sample of 248 controls (130 men, 118 women) and 397 FMR1 PC with and without fragile X-associated tremor ataxia syndrome (FXTAS) (176 men, 221 women); all participants were at least 45 years old (men: mean 62.4, SD 9.5; women: mean 62.8, SD 9.9; p = 0.63). Memory and cognitive assessments (Wechsler Adult Intelligence Scale (WAIS-III), Wechsler Memory Scale (WMS-III)) and molecular testing (CGG repeats and FMR1-mRNA levels) were performed. Additional data included body mass index (BMI), cholesterol levels, blood pressure, hemoglobin A1c (HbA1c) levels, and medical history. A higher percentage of PC subjects self-reported having a diagnosis of hypertension (50.0 vs. 35.0 %, p = 0.006) and thyroid problems (20.4 vs. 10.0 %, p = 0.012) than control subjects. When comparing controls versus PC with FXTAS, the association was higher for diabetes (p = 0.043); however, the effect was not significant after adjusting for demographic predictors. Blood pressure, blood glucose levels, HbA1c, and BMI values were not significantly different between the two groups. The PC with FXTAS group performed consistently lower in neuropsychological testing compared with the PC without FXTAS group, but the differences were very small for all but the WAIS full-scale IQ. Based on these findings, it appears that the risk for hypertension, thyroid problems, and diabetes may be more frequent in PC with FXTAS, which will require verification in future studies.

  6. GUI Application for ATCA-based LLRF Carrier Board Management

    CERN Document Server

    Wychowaniak, Jan; Predki, Pawel; Napieralski, Andrzej

    2011-01-01

    The Advanced Telecommunications Computing Architecture (ATCA) standard describes an efficient and powerful platform, implementation of which was adopted to be used as a base for control systems in high energy physics. The ATCA platform is considered to be applied for the X-ray Free Electron Laser (X-FEL), being built at Deutsches Electronen- Synchrotron (DESY) in Hamburg, Germany. The Low Level Radio Frequency (LLRF) control system is composed of a few ATCA Carrier Boards. Carrier Board hosts Intelligent Platform Management Controller (IPMC), which is developed in compliance with the PICMG specifications. IPMC is responsible for management and monitoring of sub-modules installed on Carrier Boards and pluggable Advanced Mezzanine Card (AMC) modules. The ATCA Shelf Manager is the main control unit of a single ATCA crate, responsible for all power and fan modules and Carrier Boards installed in ATCA shelf. The device provides a system administrator with a set of control and diagnostic capabilities regarding the ...

  7. 47 CFR 73.1545 - Carrier frequency departure tolerances.

    Science.gov (United States)

    2010-10-01

    ... carrier offset, including those stations licensed with a maximum effective radiated power and/or antenna... offset. See Memorandum Opinion and Order on Reconsideration, In the Matter of Establishment of a Class...

  8. Attitudes of potential providers toward preconceptual cystic fibrosis carrier screening.

    NARCIS (Netherlands)

    Poppelaars, F.; Ader, H.J.; Cornel, M.C.; Henneman, L.; Hermens, R.P.M.G.; Wal, G. van der; Kate, L. ten

    2004-01-01

    To determine the attitudes of potential providers (general practitioners and Community Health Service workers) towards preconceptual cystic fibrosis (CF) carrier screening and to determine which factors are associated with a positive attitude. A survey was conducted among 200 general practitioners (

  9. Extending the unambiguous velocity range using multiple carrier frequencies

    DEFF Research Database (Denmark)

    Zhang, Z.; Jakobsson, A.; Nikolov, Svetoslav;

    2005-01-01

    Typically, velocity estimators based on the estimation of the Doppler shift will suffer from a limited unambiguous velocity range. Proposed are two novel multiple carrier based velocity estimators extending the velocity range above the Nyquist velocity limit. Numerical simulations indicate...

  10. 42 CFR 480.136 - Disclosure to intermediaries and carriers.

    Science.gov (United States)

    2010-10-01

    ... SERVICES (CONTINUED) QUALITY IMPROVEMENT ORGANIZATIONS ACQUISITION, PROTECTION, AND DISCLOSURE OF QUALITY... practitioner if the QIO and the intermediary or carrier (or CMS if the QIO and the intermediary or...

  11. Low temperature carrier transport properties in isotopically controlled germanium

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, K.

    1994-12-01

    Investigations of electronic and optical properties of semiconductors often require specimens with extremely homogeneous dopant distributions and precisely controlled net-carrier concentrations and compensation ratios. The previous difficulties in fabricating such samples are overcome as reported in this thesis by growing high-purity Ge single crystals of controlled {sup 75}Ge and {sup 70}Ge isotopic compositions, and doping these crystals by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios are precisely determined by the thermal neutron fluence and the [{sup 74}Ge]/[{sup 70}Ge] ratios of the starting Ge materials, respectively. This method also guarantees unprecedented doping uniformity. Using such samples the authors have conducted four types of electron (hole) transport studies probing the nature of (1) free carrier scattering by neutral impurities, (2) free carrier scattering by ionized impurities, (3) low temperature hopping conduction, and (4) free carrier transport in samples close to the metal-insulator transition.

  12. Study of Charge Carrier Transport in GaN Sensors

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2016-04-01

    Full Text Available Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  13. Partition density functional theory

    Science.gov (United States)

    Nafziger, Jonathan

    Partition density functional theory (PDFT) is a method for dividing a molecular electronic structure calculation into fragment calculations. The molecular density and energy corresponding to Kohn Sham density-functional theory (KS-DFT) may be exactly recovered from these fragments. Each fragment acts as an isolated system except for the influence of a global one-body 'partition' potential which deforms the fragment densities. In this work, the developments of PDFT are put into the context of other fragment-based density functional methods. We developed three numerical implementations of PDFT: One within the NWChem computational chemistry package using basis sets, and the other two developed from scratch using real-space grids. It is shown that all three of these programs can exactly reproduce a KS-DFT calculation via fragment calculations. The first of our in-house codes handles non-interacting electrons in arbitrary one-dimensional potentials with any number of fragments. This code is used to explore how the exact partition potential changes for different partitionings of the same system and also to study features which determine which systems yield non-integer PDFT occupations and which systems are locked into integer PDFT occupations. The second in-house code, CADMium, performs real-space calculations of diatomic molecules. Features of the exact partition potential are studied for a variety of cases and an analytical formula determining singularities in the partition potential is derived. We introduce an approximation for the non-additive kinetic energy and show how this quantity can be computed exactly. Finally a PDFT functional is developed to address the issues of static correlation and delocalization errors in approximations within DFT. The functional is applied to the dissociation of H2 + and H2.

  14. Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime

    DEFF Research Database (Denmark)

    Mics, Zoltán; D’Angio, Andrea; Jensen, Søren A.;

    2013-01-01

    In a series of systematic optical pump–terahertz probe experiments, we study the density-dependent electron scattering rate in photoexcited GaAs in the regime of strong carrier diffusion. The terahertz frequency-resolved transient sheet conductivity spectra are perfectly described by the Drude...

  15. A Lanchester model of submarine attack on a carrier battlegroup

    OpenAIRE

    Eagle, James N.

    1987-01-01

    A Lanchester model is developed for a battlegroup ASW engagement. Two variations are included. In the first, long-range missile firing submarines, short-range missile or torpedo firing submarines, and submarines firing only torpedoes distribute their attack uniformly over battlegroup escort ships and carriers. In the second variation, the attack is concentrated on the carriers. supported by the Naval War College http://archive.org/details/lanchestermodelo00eagl NA

  16. Perlite as a carrier of phosphate-accumulating bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Ivankovic, T.; Hrenovic, J.; Sekovanic, L.; Tofant, A.

    2009-07-01

    The phosphate (P)-accumulating bacteria are important for biological P removal from wastewater. Currently, attention is being drawn to the immobilisation of desired bacteria on different carriers in order to achieve a better efficiency of the wastewater treatment. In this study, two size fractions (0.1-1 and 0.1-2 mm) of different forms of expanded perlite (original, autoclaved and magnesium-exchanged) were investigates as possible carriers of P accumulating bacterium. (Author)

  17. Carriers recombination processes in charge trapping memory cell by simulation

    Institute of Scientific and Technical Information of China (English)

    Song Yun-Cheng; Liu Xiao-Yan; Du Gang; Kang Jin-Feng; Han Ru-Qi

    2008-01-01

    We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell's performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.

  18. Carrier-phonon interaction in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seebeck, Jan

    2009-03-10

    In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

  19. Test probe for surface mounted leadless chip carrier

    Science.gov (United States)

    Meyer, Kerry L.; Topolewski, John

    1989-05-23

    A test probe for a surface mounted leadless chip carrier is disclosed. The probed includes specially designed connector pins which allow size reductions in the probe. A thermoplastic housing provides spring action to ensure good mechanical and electrical contact between the pins and the contact strips of a leadless chip carrier. Other features include flexible wires molded into the housing and two different types of pins alternately placed in the housing. These features allow fabrication of a smaller and simpler test probe.

  20. Dispersion and polarization dependence of mobile carrier optical nonlinearities

    Science.gov (United States)

    Rustagi, K. C.

    1984-06-01

    Based on the author's earlier work, it is shown that the proper inclusion of carrier scattering should strongly modify the frequency and polarization dependence of optical nonlinearities due to mobile carriers in semiconductors. When the momentum relaxation is much faster than the energy relaxation, the intensity dependent refractive index is enhanced, the induced birefringence becomes a sharp function of the difference frequency ωa-ωb, and a collision induced stimulated Raman effect becomes important.

  1. Effects of copper on the carrier dynamics in black silicon

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Persheyev, S.;

    2011-01-01

    Black silicon is produced by laser annealing of a-Si:H films. We show that by adding a thin Cu film on top of the a-Si:H film before laser annealing, the carrier lifetime can be significantly reduced.......Black silicon is produced by laser annealing of a-Si:H films. We show that by adding a thin Cu film on top of the a-Si:H film before laser annealing, the carrier lifetime can be significantly reduced....

  2. Investigation of field-dependent charge carrier generation and recombination in polymer based solar cells by transient extraction currents

    Energy Technology Data Exchange (ETDEWEB)

    Kniepert, Juliane; Blakesley, James; Neher, Dieter [University of Potsdam (Germany)

    2011-07-01

    There is an ongoing discussion as to whether photoinduced charge transfer in P3HT:PCBM solar cells leads to fully separated electrons and holes, independent of an electric field, or Coulombically bound interfacial charge pairs. While recent studies by R.A. Marsh et al. with transient absorption spectroscopy gave clear evidence for the formation and field-induced dissociation of bound polaron pairs, measurements by I.A. Howard et al. were in favour of hot exciton dissociation. Here, we present the results of bias-dependent Time Delayed Collection Field (TDCF) measurements to access directly the density of free charge carriers in P3HT:PCBM blends coated from dichlorobenzene. Solvent annealing was applied to yield a phase-separated morphology and the corresponding solar cells exhibit high values for the external quantum efficiency and fill factor. Our setup allowed us to follow the generation and recombination of photogenerated charges with a so far unattained time resolution of 40 ns. Our experiments show that the number of collected carriers is independent of the applied bias during pulsed illumination implying that extractable carriers in P3HT:PCBM blends are not generated by the field-assisted separation of bound polaron pairs. In addition, our experiments support the view that bimolecular recombination of free carriers is strongly suppressed in phase-separated P3HT:PBCM blends.

  3. Accelerated pericyte degeneration and blood-brain barrier breakdown in apolipoprotein E4 carriers with Alzheimer's disease.

    Science.gov (United States)

    Halliday, Matthew R; Rege, Sanket V; Ma, Qingyi; Zhao, Zhen; Miller, Carol A; Winkler, Ethan A; Zlokovic, Berislav V

    2016-01-01

    The blood–brain barrier (BBB) limits the entry of neurotoxic blood-derived products and cells into the brain that is required for normal neuronal functioning and information processing. Pericytes maintain the integrity of the BBB and degenerate in Alzheimer’s disease (AD). The BBB is damaged in AD, particularly in individuals carrying apolipoprotein E4 (APOE4) gene, which is a major genetic risk factor for late-onset AD. The mechanisms underlying the BBB breakdown in AD remain, however, elusive. Here, we show accelerated pericyte degeneration in AD APOE4 carriers >AD APOE3 carriers >non-AD controls, which correlates with the magnitude of BBB breakdown to immunoglobulin G and fibrin. We also show accumulation of the proinflammatory cytokine cyclophilin A (CypA) and matrix metalloproteinase-9 (MMP-9) in pericytes and endothelial cells in AD (APOE4 >APOE3), previously shown to lead to BBB breakdown in transgenic APOE4 mice. The levels of the apoE lipoprotein receptor, low-density lipoprotein receptor-related protein-1 (LRP1), were similarly reduced in AD APOE4 and APOE3 carriers. Our data suggest that APOE4 leads to accelerated pericyte loss and enhanced activation of LRP1-dependent CypA–MMP-9 BBB-degrading pathway in pericytes and endothelial cells, which can mediate a greater BBB damage in AD APOE4 compared with AD APOE3 carriers.

  4. Nanostructured lipid carriers system: recent advances in drug delivery.

    Science.gov (United States)

    Iqbal, Md Asif; Md, Shadab; Sahni, Jasjeet Kaur; Baboota, Sanjula; Dang, Shweta; Ali, Javed

    2012-12-01

    Nanostructured lipid carrier (NLC) is second generation smarter drug carrier system having solid matrix at room temperature. This carrier system is made up of physiological, biodegradable and biocompatible lipid materials and surfactants and is accepted by regulatory authorities for application in different drug delivery systems. The availability of many products in the market in short span of time reveals the success story of this delivery system. Since the introduction of the first product, around 30 NLC preparations are commercially available. NLC exhibit superior advantages over other colloidal carriers viz., nanoemulsions, polymeric nanoparticles, liposomes, SLN etc. and thus, have been explored to more extent in pharmaceutical technology. The whole set of unique advantages such as enhanced drug loading capacity, prevention of drug expulsion, leads to more flexibility for modulation of drug release and makes NLC versatile delivery system for various routes of administration. The present review gives insights on the definitions and characterization of NLC as colloidal carriers including the production techniques and suitable formulations. This review paper also highlights the importance of NLC in pharmaceutical applications for the various routes of drug delivery viz., topical, oral, pulmonary, ocular and parenteral administration and its future perspective as a pharmaceutical carrier.

  5. Modeling of carrier dynamics in quantum-well electroabsorption modulators

    DEFF Research Database (Denmark)

    Højfeldt, Sune; Mørk, Jesper

    2002-01-01

    We present a comprehensive drift-diffusion-type electroabsorption modulator (EAM) model. The model allows us to investigate both steady-state properties and to follow the sweep-out of carriers after pulsed optical excitation. Furthermore, it allows for the investigation of the influence that vari......We present a comprehensive drift-diffusion-type electroabsorption modulator (EAM) model. The model allows us to investigate both steady-state properties and to follow the sweep-out of carriers after pulsed optical excitation. Furthermore, it allows for the investigation of the influence...... that various design parameters have on the device properties, in particular how they affect the carrier dynamics and the corresponding field dynamics. A number of different types of results are presented. We calculate absorption spectra and steady-state field screening due to carrier pile-up at the separate......-confinement heterobarriers. We then move on to look at carrier sweep-out upon short-pulse optical excitation. For a structure with one well, we analyze how the well position affects the carrier sweep-out and the absorption recovery. We calculate the field dynamics in a multiquantum-well structure and discuss how the changes...

  6. Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

    Energy Technology Data Exchange (ETDEWEB)

    Stehr, D.

    2007-12-28

    density, many-body effects such as the depolarization and their influence on the spectral position as well as on the lineshape on the intersubband dephasing are studied. Also the difference of excitonic and free-carrier type excitation is discussed, and indication of an excitonic intersubband transition is found. (orig.)

  7. Density-of-states

    CERN Document Server

    Langfeld, Kurt

    2016-01-01

    Although Monte Carlo calculations using Importance Sampling have matured into the most widely employed method for determining first principle results in QCD, they spectacularly fail for theories with a sign problem or for which certain rare configurations play an important role. Non-Markovian Random walks, based upon iterative refinements of the density-of-states, overcome such overlap problems. I will review the Linear Logarithmic Relaxation (LLR) method and, in particular, focus onto ergodicity and exponential error suppression. Applications include the high-state Potts model, SU(2) and SU(3) Yang-Mills theories as well as a quantum field theory with a strong sign problem: QCD at finite densities of heavy quarks.

  8. Gluon density in nuclei

    CERN Document Server

    Ayala, A P; Levin, E M

    1996-01-01

    In this talk we present our detail study ( theory and numbers) [1] on the shadowing corrections to the gluon structure functions for nuclei. Starting from rather contraversial information on the nucleon structure function which is originated by the recent HERA data, we develop the Glauber approach for the gluon density in a nucleus based on Mueller formula [2] and estimate the value of the shadowing corrections in this case. Than we calculate the first corrections to the Glauber approach and show that these corrections are big. Based on this practical observation we suggest the new evolution equation which takes into account the shadowing corrections and solve it. We hope to convince you that the new evolution equation gives a good theoretical tool to treat the shadowing corrections for the gluons density in a nucleus and, therefore, it is able to provide the theoretically reliable initial conditions for the time evolution of the nucleus - nucleus cascade.

  9. Quantal density functional theory

    CERN Document Server

    Sahni, Viraht

    2016-01-01

    This book deals with quantal density functional theory (QDFT) which is a time-dependent local effective potential theory of the electronic structure of matter. The treated time-independent QDFT constitutes a special case. In the 2nd edition, the theory is extended to include the presence of external magnetostatic fields. The theory is a description of matter based on the ‘quantal Newtonian’ first and second laws which is in terms of “classical” fields that pervade all space, and their quantal sources. The fields, which are explicitly defined, are separately representative of electron correlations due to the Pauli exclusion principle, Coulomb repulsion, correlation-kinetic, correlation-current-density, and correlation-magnetic effects. The book further describes Schrödinger theory from the new physical perspective of fields and quantal sources. It also describes traditional Hohenberg-Kohn-Sham DFT, and explains via QDFT the physics underlying the various energy functionals and functional derivatives o...

  10. Degenerate density perturbation theory

    Science.gov (United States)

    Palenik, Mark C.; Dunlap, Brett I.

    2016-09-01

    Fractional occupation numbers can be used in density functional theory to create a symmetric Kohn-Sham potential, resulting in orbitals with degenerate eigenvalues. We develop the corresponding perturbation theory and apply it to a system of Nd degenerate electrons in a harmonic oscillator potential. The order-by-order expansions of both the fractional occupation numbers and unitary transformations within the degenerate subspace are determined by the requirement that a differentiable map exists connecting the initial and perturbed states. Using the X α exchange-correlation (XC) functional, we find an analytic solution for the first-order density and first- through third-order energies as a function of α , with and without a self-interaction correction. The fact that the XC Hessian is not positive definite plays an important role in the behavior of the occupation numbers.

  11. Degenerate Density Perturbation Theory

    CERN Document Server

    Palenik, Mark C

    2016-01-01

    Fractional occupation numbers can be used in density functional theory to create a symmetric Kohn-Sham potential, resulting in orbitals with degenerate eigenvalues. We develop the corresponding perturbation theory and apply it to a system of $N_d$ degenerate electrons in a harmonic oscillator potential. The order-by-order expansions of both the fractional occupation numbers and unitary transformations within the degenerate subspace are determined by the requirement that a differentiable map exists connecting the initial and perturbed states. Using the X$\\alpha$ exchange-correlation (XC) functional, we find an analytic solution for the first-order density and first through third-order energies as a function of $\\alpha$, with and without a self-interaction correction. The fact that the XC Hessian is not positive definite plays an important role in the behavior of the occupation numbers.

  12. Contingent kernel density estimation.

    Directory of Open Access Journals (Sweden)

    Scott Fortmann-Roe

    Full Text Available Kernel density estimation is a widely used method for estimating a distribution based on a sample of points drawn from that distribution. Generally, in practice some form of error contaminates the sample of observed points. Such error can be the result of imprecise measurements or observation bias. Often this error is negligible and may be disregarded in analysis. In cases where the error is non-negligible, estimation methods should be adjusted to reduce resulting bias. Several modifications of kernel density estimation have been developed to address specific forms of errors. One form of error that has not yet been addressed is the case where observations are nominally placed at the centers of areas from which the points are assumed to have been drawn, where these areas are of varying sizes. In this scenario, the bias arises because the size of the error can vary among points and some subset of points can be known to have smaller error than another subset or the form of the error may change among points. This paper proposes a "contingent kernel density estimation" technique to address this form of error. This new technique adjusts the standard kernel on a point-by-point basis in an adaptive response to changing structure and magnitude of error. In this paper, equations for our contingent kernel technique are derived, the technique is validated using numerical simulations, and an example using the geographic locations of social networking users is worked to demonstrate the utility of the method.

  13. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels

    Science.gov (United States)

    Ban, Keun-Yong; Kim, Yeongho; Kuciauskas, Darius; Bremner, Stephen P.; Honsberg, Christiana B.

    2016-12-01

    The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (δ)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e-/dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e-/dot is found to increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the δ-doping density is high enough (>4 e-/dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the δ-doping, leading to reduced thermal quenching of the PL.

  14. Impact of the intermixed phase and the channel network on the carrier mobility of nanostructured solar cells.

    Science.gov (United States)

    Woellner, Cristiano F; Freire, José A

    2016-02-28

    We analyzed the impact of the complex channel network of donor and acceptor domains in nanostructured solar cells on the mobility of the charge carriers moving by thermally activated hopping. Particular attention was given to the so called intermixed phase, or interface roughness, that has recently been shown to promote an increase in the cell efficiency. The domains were obtained from a Monte Carlo simulation of a two-species lattice gas. We generated domain morphologies with controllable channel size and interface roughness. The field and density dependence of the carrier hopping mobility in different morphologies was obtained by solving a master equation. Our results show that the mobility decreases with roughness and increases with typical channel sizes. The deleterious effect of the roughness on the mobility is quite dramatic at low carrier densities and high fields. The complex channel network is shown to be directly responsible for two potentially harmful effects to the cell performance: a remarkable decrease of the mobility with increasing field and the accumulation of charge at the domains interface, which leads to recombination losses.

  15. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels

    Energy Technology Data Exchange (ETDEWEB)

    Ban, Keun-Yong [Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering; Kim, Yeongho [Korea Research Inst. of Chemistry Technology (KRICT), Daejeon (Korea, Republic of). Division of Metrology for Future Technology; Kuciauskas, Darius [National Renewable Energy Lab. (NREL), Golden, CO (United States); Bremner, Stephen P. [Univ. of New South Wales, Sydney, NSW (Australia). School of Photovoltaic and Renewable Energy Engineering; Honsberg, Christiana B. [Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering

    2016-11-10

    The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (d)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e-/dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e-/dot is found to increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the d-doping density is high enough (>4 e-/dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the d-doping, leading to reduced thermal quenching of the PL.

  16. Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

    Directory of Open Access Journals (Sweden)

    E. Gaubas

    2013-11-01

    Full Text Available The MOCVD grown GaN epi-layers of different thickness have been examined in order to clarify a role of surface recombination, to separate an impact of radiative and non-radiative recombination and disorder factors. The microwave probed –photoconductivity (MW-PC and spectrally resolved photo-luminescence (PL transients were simultaneously recorded under ultraviolet (UV light 354 nm pulsed 500 ps excitation. The MW-PC transients exhibited the carrier decay components associated with carrier decay within micro-crystals and the disordered structure on the periphery areas surrounding crystalline columns. Three PL bands were resolved within PL spectrum, namely, the exciton ascribed UV-PL band edge for hν>3.3 eV, blue B-PL band for 2.5 < hν < 3.0 eV and yellow Y-PL band with hν < 2.4 eV. It has been obtained that intensity of UV-PL band increases with excitation density, while intensity of B-PL band is nearly invariant. However, intensity of the Y-PL increases with reduction of the excitation density. The Y-PL can be associated with trapping centers. A reduction of UV excitation density leads to a decrease of the relative amplitude of the asymptotic component within the MW-PC transients and to an increase of the amplitude as well as duration of the yellow spectral band (Y-PL asymptotic component. Fractional index α with values 0.5 < α < 0.8 was evaluated for the stretched-exponent component which fits the experimental transients determined by the disordered structure ascribed to the periphery areas surrounding the crystalline columns.

  17. Renewable Hydrogen Carrier — Carbohydrate: Constructing the Carbon-Neutral Carbohydrate Economy

    Directory of Open Access Journals (Sweden)

    Y.-H. Percival Zhang

    2011-01-01

    Full Text Available The hydrogen economy presents an appealing energy future but its implementation must solve numerous problems ranging from low-cost sustainable production, high-density storage, costly infrastructure, to eliminating safety concern. The use of renewable carbohydrate as a high-density hydrogen carrier and energy source for hydrogen production is possible due to emerging cell-free synthetic biology technology—cell-free synthetic pathway biotransformation (SyPaB. Assembly of numerous enzymes and co-enzymes in vitro can create complicated set of biological reactions or pathways that microorganisms or catalysts cannot complete, for example, C6H10O5 (aq + 7 H2O (l à 12 H2 (g + 6 CO2 (g (PLoS One 2007, 2:e456. Thanks to 100% selectivity of enzymes, modest reaction conditions, and high-purity of generated hydrogen, carbohydrate is a promising hydrogen carrier for end users. Gravimetric density of carbohydrate is 14.8 H2 mass% if water can be recycled from proton exchange membrane fuel cells or 8.33% H2 mass% without water recycling. Renewable carbohydrate can be isolated from plant biomass or would be produced from a combination of solar electricity/hydrogen and carbon dioxide fixation mediated by high-efficiency artificial photosynthesis mediated by SyPaB. The construction of this carbon-neutral carbohydrate economy would address numerous sustainability challenges, such as electricity and hydrogen storage, CO2 fixation and long-term storage, water conservation, transportation fuel production, plus feed and food production.

  18. Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions.

    Science.gov (United States)

    Cueff, Sébastien; Labbé, Christophe; Jambois, Olivier; Berencén, Yonder; Kenyon, Anthony J; Garrido, Blas; Rizk, Richard

    2012-09-24

    We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si-excess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electrically-driven devices using Si-ncs or Si-excess mediated EL.

  19. Density measures and additive property

    OpenAIRE

    Kunisada, Ryoichi

    2015-01-01

    We deal with finitely additive measures defined on all subsets of natural numbers which extend the asymptotic density (density measures). We consider a class of density measures which are constructed from free ultrafilters on natural numbers and study a certain additivity property of such density measures.

  20. Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure

    Energy Technology Data Exchange (ETDEWEB)

    Asahi, S.; Teranishi, H.; Kasamatsu, N.; Kada, T.; Kaizu, T.; Kita, T. [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

    2014-08-14

    We investigated the effects of an increase in the barrier height on the enhancement of the efficiency of two-step photo-excitation in InAs quantum dot (QD) solar cells with a dot-in-well structure. Thermal carrier escape of electrons pumped in QD states was drastically reduced by sandwiching InAs/GaAs QDs with a high potential barrier of Al{sub 0.3}Ga{sub 0.7}As. The thermal activation energy increased with the introduction of the barrier. The high potential barrier caused suppression of thermal carrier escape and helped realize a high electron density in the QD states. We observed efficient two-step photon absorption as a result of the high occupancy of the QD states at room temperature.

  1. Hybrid nanostructured drug carrier with tunable and controlled drug release

    Energy Technology Data Exchange (ETDEWEB)

    Depan, D.; Misra, R.D.K., E-mail: dmisra@louisiana.edu

    2012-08-01

    We describe here a transformative approach to synthesize a hybrid nanostructured drug carrier that exhibits the characteristics of controlled drug release. The synthesis of the nanohybrid architecture involved two steps. The first step involved direct crystallization of biocompatible copolymer along the long axis of the carbon nanotubes (CNTs), followed by the second step of attachment of drug molecule to the polymer via hydrogen bonding. The extraordinary inorganic-organic hybrid architecture exhibited high drug loading ability and is physically stable even under extreme conditions of acidic media and ultrasonic irradiation. The temperature and pH sensitive characteristics of the hybrid drug carrier and high drug loading ability merit its consideration as a promising carrier and utilization of the fundamental aspects used for synthesis of other promising drug carriers. The higher drug release response during the application of ultrasonic frequency is ascribed to a cavitation-type process in which the acoustic bubbles nucleate and collapse releasing the drug. Furthermore, the study underscores the potential of uniquely combining CNTs and biopolymers for drug delivery. - Graphical abstract: Block-copolymer crystallized on carbon nanotubes (CNTs). Nanohybrid drug carrier synthesized by attaching doxorubicin (DOX) to polymer crystallized CNTs. Crystallized polymer on CNTs provide mechanical stability. Triggered release of DOX. Highlights: Black-Right-Pointing-Pointer The novel synthesis of a hybrid nanostructured drug carrier is described. Black-Right-Pointing-Pointer The drug carrier exhibits high drug loading ability and is physically stable. Black-Right-Pointing-Pointer The high drug release is ascribed to a cavitation-type process.

  2. Density Distribution Sunflower Plots

    Directory of Open Access Journals (Sweden)

    William D. Dupont

    2003-01-01

    Full Text Available Density distribution sunflower plots are used to display high-density bivariate data. They are useful for data where a conventional scatter plot is difficult to read due to overstriking of the plot symbol. The x-y plane is subdivided into a lattice of regular hexagonal bins of width w specified by the user. The user also specifies the values of l, d, and k that affect the plot as follows. Individual observations are plotted when there are less than l observations per bin as in a conventional scatter plot. Each bin with from l to d observations contains a light sunflower. Other bins contain a dark sunflower. In a light sunflower each petal represents one observation. In a dark sunflower, each petal represents k observations. (A dark sunflower with p petals represents between /2-pk k and /2+pk k observations. The user can control the sizes and colors of the sunflowers. By selecting appropriate colors and sizes for the light and dark sunflowers, plots can be obtained that give both the overall sense of the data density distribution as well as the number of data points in any given region. The use of this graphic is illustrated with data from the Framingham Heart Study. A documented Stata program, called sunflower, is available to draw these graphs. It can be downloaded from the Statistical Software Components archive at http://ideas.repec.org/c/boc/bocode/s430201.html . (Journal of Statistical Software 2003; 8 (3: 1-5. Posted at http://www.jstatsoft.org/index.php?vol=8 .

  3. Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration

    Directory of Open Access Journals (Sweden)

    Yuta Fujimoto

    2015-09-01

    Full Text Available We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor (PF at 300 K had a maximum value of 82 × 10−6 W/mK2, where the carrier density was 7.7 × 1019 cm−3. Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal. The thermoelectric properties were controlled by the relationship between the position of Fermi level and the height of potential energy barriers.

  4. Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor.

    Science.gov (United States)

    Peng, Songang; Jin, Zhi; Zhang, Dayong; Shi, Jingyuan; Mao, Dacheng; Wang, Shaoqing; Yu, Guanghui

    2017-03-01

    A top-gated graphene FET with an ultralow 1/f noise level of 1.8 × 10(-12) μm(2)Hz(1-) (f = 10 Hz) has been fabricated. The noise has the least value at Dirac point, it then increases fast when the current deviates from that at Dirac point, the noise slightly decreases at large current. The phenomenon can be understood by the carrier-number-fluctuation induced low frequency noise, which caused by the trapping-detrapping processes of the carriers. Further analysis suggests that the effect trap density depends on the location of Fermi level in graphene channel. The study has provided guidance for suppressing the 1/f noise in graphene-based applications.

  5. Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer

    Science.gov (United States)

    Halley, D.; Norga, G.; Guiller, A.; Fompeyrine, J.; Locquet, J. P.; Drechsler, U.; Siegwart, H.; Rossel, C.

    2003-11-01

    The carrier mobility μ in low-doped silicon-on-insulator wafers is found to be strongly modified by the deposition of a thin ZrO2 or SrZrO3 top layer grown by molecular-beam epitaxy. Pseudo-metal-oxide-semiconductor field-effect-transistor measurements performed on several samples clearly show a correlation between μ and the density of interface traps (Dit) at the Si/buried-oxide interface. The reduction of Dit by a forming gas anneal leads to a corresponding increase in mobility. Moreover, the high-k/Si interface can contribute to the total drain current via the creation of an inversion channel induced by trapped charges in the high-k layer. Using Hall-effect measurements, we took advantage of this additional current to evaluate the carrier mobility at the high-k/Si interface, without the need of a top gate electrode.

  6. Ultra--fast carriers relaxation in bulk silicon following photo--excitation with a short and polarized laser pulse

    CERN Document Server

    Sangalli, Davide

    2014-01-01

    A novel approach based on the merging of the out--of--equilibrium Green's function method with the ab-initio, Density--Functional--Theory is used to describe the ultra--fast carriers relaxation in Silicon. The results are compared with recent two photon photo--emission measurements. We show that the interpretation of the carrier relaxation in terms of L -> X inter--valley scattering is not correct. The ultra--fast dynamics measured experimentally is, instead, due to the scattering between degenerate $L$ states that is activated by the non symmetric population of the conduction bands induced by the laser field. This ultra--fast relaxation is, then, entirely due to the specific experimental setup and it can be interpreted by introducing a novel definition of the quasi--particle lifetimes in an out--of--equilibrium context.

  7. Discrete density of states

    Science.gov (United States)

    Aydin, Alhun; Sisman, Altug

    2016-03-01

    By considering the quantum-mechanically minimum allowable energy interval, we exactly count number of states (NOS) and introduce discrete density of states (DOS) concept for a particle in a box for various dimensions. Expressions for bounded and unbounded continua are analytically recovered from discrete ones. Even though substantial fluctuations prevail in discrete DOS, they're almost completely flattened out after summation or integration operation. It's seen that relative errors of analytical expressions of bounded/unbounded continua rapidly decrease for high NOS values (weak confinement or high energy conditions), while the proposed analytical expressions based on Weyl's conjecture always preserve their lower error characteristic.

  8. Finite Density Fat QCD

    CERN Document Server

    Aloisio, R; Di Carlo, G; Galante, A; Grillo, A F

    2000-01-01

    Lattice formulation of Finite Baryon Density QCD is problematic from computer simulation point of view; it is well known that for light quark masses the reconstructed partition function fails to be positive in a wide region of parameter space. For large bare quark masses, instead, it is possible to obtain more sensible results; problems are still present but restricted to a small region. We present evidence for a saturation transition independent from the gauge coupling $\\beta$ and for a transition line that, starting from the temperature critical point at $\\mu=0$, moves towards smaller $\\beta$ with increasing $\\mu$ as expected from simplified phenomenological arguments.

  9. THE USE OF PREVENTIVE HEALTH-CARE SERVICES - CARRIER TESTING FOR THE GENETIC DISORDER HEMOPHILIA

    NARCIS (Netherlands)

    VAREKAMP, [No Value; SUURMEIJER, TPBM; ROSENDAAL, FR; BROCKERVRIENDS, AHJT

    1993-01-01

    A retrospective study was performed to explore carrier testing among women who were possible or obligate carriers of the haemophilia gene. Knowledge of the possibility of carrier testing and use of carrier testing were studied separately. In our exploration we were guided by the diffusion theory and

  10. 49 CFR 391.68 - Private motor carrier of passengers (nonbusiness).

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Private motor carrier of passengers (nonbusiness... MOTOR CARRIER SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION FEDERAL MOTOR CARRIER SAFETY... Exemptions § 391.68 Private motor carrier of passengers (nonbusiness). The following rules in this part...

  11. 49 CFR 391.69 - Private motor carrier of passengers (business).

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Private motor carrier of passengers (business... MOTOR CARRIER SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION FEDERAL MOTOR CARRIER SAFETY... Exemptions § 391.69 Private motor carrier of passengers (business). The provisions of § 391.21 (relating...

  12. 47 CFR 54.903 - Obligations of rate-of-return carriers and the Administrator.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Obligations of rate-of-return carriers and the... CARRIER SERVICES (CONTINUED) UNIVERSAL SERVICE Interstate Common Line Support Mechanism for Rate-of-Return Carriers § 54.903 Obligations of rate-of-return carriers and the Administrator. (a) To be eligible...

  13. 77 FR 67613 - Patterns of Safety Violations by Motor Carrier Management

    Science.gov (United States)

    2012-11-13

    ... Federal Motor Carrier Safety Administration 49 CFR Parts 385 and 386 RIN 2126-AB42 Patterns of Safety Violations by Motor Carrier Management AGENCY: Federal Motor Carrier Safety Administration (FMCSA), DOT... would enable the Agency to suspend or revoke the operating authority registration of motor carriers...

  14. 30 CFR 75.1403-6 - Criteria-Self-propelled personnel carriers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Criteria-Self-propelled personnel carriers. 75... § 75.1403-6 Criteria—Self-propelled personnel carriers. (a) Each self-propelled personnel carrier..., each track-mounted self-propelled personnel carrier should: (1) Be provided with a suitable...

  15. Carrier doping by current injection into LaOFFeAs

    Energy Technology Data Exchange (ETDEWEB)

    Lazareva, Irina; Koval, Yury; Steiner, Christian; Mueller, Paul [Department of Physics, Universitaet Erlangen (Germany); Wurmehl, Sabine; Buechner, Bernd [IFW Dresden (Germany); Stuerzer, Tobias; Johrendt, Dirk [Department Chemie, LMU Muenchen (Germany)

    2013-07-01

    Recently, we were able to change the carrier concentration of hole-doped high-T{sub c} superconductors by injection of large currents along the c-axis. We extend this type of experiments to electron-doped pnictides. From our earlier interpretation we should expect that trapping of electrons caused by current injection would decrease the available carrier concentration. Indeed, by various experiments with superconductors from the LaO{sub 1-x}F{sub x}FeAs family we are able to show that trapped electrons caused by current injection perpendicular to the FeAs planes decrease the carrier concentration. We present a spectacular confirmation of this interpretation by the T{sub c} increase by more than 15 K in heavily overdoped La{sub 0.74}F{sub 0.26}FeAs. We performed similar experiments with the recently discovered 1048 layered pnictides of the composition Ca{sub 10}(FeAs){sub 10}(Pt{sub 4}As{sub 8}). The general tendency of carrier doping by trapped electrons was confirmed. A rather interesting discovery was the evolution of hysteretic c-axis IV-characteristics. This is a strong indication of intrinsic Josephson effects. We discuss these results in terms of a change of anisotropy by carrier doping.

  16. Comparison of methods to detect Pasteurella multocida in carrier waterfowl

    Science.gov (United States)

    Samuel, M.D.; Shadduck, D.J.; Goldberg, D.R.; Johnson, W.P.

    2003-01-01

    We conducted laboratory challenge trials using mallard ducks (Anas platyrhynchos) to compare methods for detecting carriers of Pasteurella multocida, the bacterium that causes avian cholera, in wild birds. Birds that survived the initial infection were euthanized at 2-4 wk intervals up to 14 wk post challenge. Isolates of P. multocida were obtained at necropsy from 23% of the birds that survived initial infection. We found that swab samples (oral, cloacal, nasal, eye, and leg joint) were most effective for detecting carrier birds up to 14 wk post infection. No detectable differences in isolation were observed for samples stored in either 10% dimethysulfoxide or brain heart infusion broth. The frequency of detecting carriers in our challenge trials appeared to be related to mortality rates observed during the trial, but was not related to a number of other factors including time after challenge, time delays in collecting tissues postmortem, and route of infection. In our trials, there was little association between antibody levels and carrier status. We concluded that swabs samples collected from recently dead birds, stored in liquid nitrogen, and processed using selective broth provide a feasible field method for detecting P. multocida carriers in wild waterfowl.

  17. Mechanisms of Carrier Transport Induced by a Microswimmer Bath

    Energy Technology Data Exchange (ETDEWEB)

    Kaiser, Andreas; Sokolov, Andrey; Aranson, Igor S.; Lowen, Hartmut

    2015-04-01

    Recently, it was found that a wedgelike microparticle (referred to as ”carrier”) which is only allowed to translate but not to rotate exhibits a directed translational motion along the wedge cusp if it is exposed to a bath of microswimmers. Here we model this effect in detail by resolving the microswimmers explicitly using interaction models with different degrees of mutual alignment. Using computer simulations we study the impact of these interactions on the transport efficiency of V-shaped carrier. We show that the transport mechanisms itself strongly depends on the degree of alignment embodied in the modelling of the individual swimmer dynamics. For weak alignment, optimal carrier transport occurs in the turbulent microswimmer state and is induced by swirl depletion inside the carrier. For strong aligning interactions, optimal transport occurs already in the dilute regime and is mediated by a polar cloud of swimmers in the carrier wake pushing the wedge-particle forward. We also demonstrate that the optimal shape of the carrier leading to maximal transport speed depends on the kind of interaction model used.

  18. [Importance of drug carriers in the treatment of visceral leishmaniasis].

    Science.gov (United States)

    Fusai, T; Durand, R; Boulard, Y; Paul, M; Bories, C; Rivollet, D; Houin, R; Deniau, M

    1995-01-01

    Visceral leishmaniasis is caused by hemoflagellate protozoa which are obligatory parasites of the mononuclear phagocyte system. Leishmaniasis causes high morbidity and mortality worldwide. The treatment of choice remains pentavalent antimonials, but high toxicity and failures have been reported. An alternative to conventional treatment is delivery anti-leishmania agents using colloidal carrier systems. Carriers improve drug activity against intracellular disease involving the mononuclear phagocyte system. The principle of drug delivery by carrier systems has been applied successfully for anticancer drugs. Recently complete remission of polyresistant visceral leishmaniasis was obtained by injection of liposomal amphotericin B. At present, no colloidal drug carrier for antimony derivatives is available, but pentamidine can be linked experimentally to methacrylate polymer nano-particles. Drug-loaded nanoparticles have been shown to be effective against amastigote leishmania both in vitro and in vivo. Another colloidal system of major interest for drug delivery, the liposome has already been loaded with amphotericin B and used for human therapy. The concept of particulate drug carriers opens the way for new chemotherapeutic approaches in the field of parasitology.

  19. Interfacing materials science and biology for drug carrier design.

    Science.gov (United States)

    Such, Georgina K; Yan, Yan; Johnston, Angus P R; Gunawan, Sylvia T; Caruso, Frank

    2015-04-08

    Over the last ten years, there has been considerable research interest in the development of polymeric carriers for biomedicine. Such delivery systems have the potential to significantly reduce side effects and increase the bioavailability of poorly soluble therapeutics. The design of carriers has relied on harnessing specific variations in biological conditions, such as pH or redox potential, and more recently, by incorporating specific peptide cleavage sites for enzymatic hydrolysis. Although much progress has been made in this field, the specificity of polymeric carriers is still limited when compared with their biological counterparts. To synthesize the next generation of carriers, it is important to consider the biological rationale for materials design. This requires a detailed understanding of the cellular microenvironments and how these can be harnessed for specific applications. In this review, several important physiological cues in the cellular microenvironments are outlined, with a focus on changes in pH, redox potential, and the types of enzymes present in specific regions. Furthermore, recent studies that use such biologically inspired triggers to design polymeric carriers are highlighted, focusing on applications in the field of therapeutic delivery.

  20. Fundamental Limitations to Plasmonic Hot-Carrier Solar Cells.

    Science.gov (United States)

    Zhang, Yu; Yam, ChiYung; Schatz, George C

    2016-05-19

    Detailed balance between photon-absorption and energy loss constrains the efficiency of conventional solar cells to the Shockley-Queisser limit. However, if solar illumination can be absorbed over a wide spectrum by plasmonic structures, and the generated hot-carriers can be collected before relaxation, the efficiency of solar cells may be greatly improved. In this work, we explore the opportunities and limitations for making plasmonic solar cells, here considering a design for hot-carrier solar cells in which a conventional semiconductor heterojunction is attached to a plasmonic medium such as arrays of gold nanoparticles. The underlying mechanisms and fundamental limitations of this cell are studied using a nonequilibrium Green's function method, and the numerical results indicate that this cell can significantly improve the absorption of solar radiation without reducing open-circuit voltage, as photons can be absorbed to produce mobile carriers in the semiconductor as long as they have energy larger than the Schottky barrier rather than above the bandgap. However, a significant fraction of the hot-carriers have energies below the Schottky barrier, which makes the cell suffer low internal quantum efficiency. Moreover, quantum efficiency is also limited by hot-carrier relaxation and metal-semiconductor coupling. The connection of these results to recent experiments is described, showing why plasmonic solar cells can have less than 1% efficiency.

  1. [Carriers of Neisseria meningitidis among children from a primary school].

    Science.gov (United States)

    Martínez, Isabel; López, Omar; Sotolongo, Franklin; Mirabal, Mayelin; Bencomo, Antonio

    2003-01-01

    A cross-sectional and descriptive study was conducted among 318 children from the "Mártires del Corynthia" Primary School under the authorization of the Municipal Division of Education and the informed consent of their parents aimed at knowing the prevalence of meningoccoco carriers in school children, determining the epidemiological markers of the isolated strains and establishing the possible relation existing between the carrier and variables, such as age, sex, acute respiratory infection history, hacinamiento, amigdalectomy, inhibitory effect of of the accompanying flora and the secretory state of ABH antigens in saliva. All of them underwent nasopharyngeal exudate and a saliva sample was taken. In adition, the paents were surveyed about the risks factors to be investigated. 6.9 % of meningoccoco carriers were found and the NA:NT:P1:NST:L3,7,9 strains predominated. The risk factors with statistically significant results regarding the condition of carrier Neisseria meningitidis carrier were age, acute respiratory infection history, and the presence of Streptococcus pneumoniae and Neisseria lactamica of the accompanying bacterial flora in the nasopharynx of the children under study.

  2. Visual function and cortical organization in carriers of blue cone monochromacy.

    Science.gov (United States)

    Rossi, Ethan A; Achtman, Rebecca L; Guidon, Arnaud; Williams, David R; Roorda, Austin; Bavelier, Daphne; Carroll, Joseph

    2013-01-01

    Carriers of blue cone monochromacy have fewer cone photoreceptors than normal. Here we examine how this disruption at the level of the retina affects visual function and cortical organization in these individuals. Visual resolution and contrast sensitivity was measured at the preferred retinal locus of fixation and visual resolution was tested at two eccentric locations (2.5° and 8°) with spectacle correction only. Adaptive optics corrected resolution acuity and cone spacing were simultaneously measured at several locations within the central fovea with adaptive optics scanning laser ophthalmoscopy (AOSLO). Fixation stability was assessed by extracting eye motion data from AOSLO videos. Retinotopic mapping using fMRI was carried out to estimate the area of early cortical regions, including that of the foveal confluence. Without adaptive optics correction, BCM carriers appeared to have normal visual function, with normal contrast sensitivity and visual resolution, but with AO-correction, visual resolution was significantly worse than normal. This resolution deficit is not explained by cone loss alone and is suggestive of an associated loss of retinal ganglion cells. However, despite evidence suggesting a reduction in the number of retinal ganglion cells, retinotopic mapping showed no reduction in the cortical area of the foveal confluence. These results suggest that ganglion cell density may not govern the foveal overrepresentation in the cortex. We propose that it is not the number of afferents, but rather the content of the information relayed to the cortex from the retina across the visual field that governs cortical magnification, as under normal viewing conditions this information is similar in both BCM carriers and normal controls.

  3. Visual function and cortical organization in carriers of blue cone monochromacy.

    Directory of Open Access Journals (Sweden)

    Ethan A Rossi

    Full Text Available Carriers of blue cone monochromacy have fewer cone photoreceptors than normal. Here we examine how this disruption at the level of the retina affects visual function and cortical organization in these individuals. Visual resolution and contrast sensitivity was measured at the preferred retinal locus of fixation and visual resolution was tested at two eccentric locations (2.5° and 8° with spectacle correction only. Adaptive optics corrected resolution acuity and cone spacing were simultaneously measured at several locations within the central fovea with adaptive optics scanning laser ophthalmoscopy (AOSLO. Fixation stability was assessed by extracting eye motion data from AOSLO videos. Retinotopic mapping using fMRI was carried out to estimate the area of early cortical regions, including that of the foveal confluence. Without adaptive optics correction, BCM carriers appeared to have normal visual function, with normal contrast sensitivity and visual resolution, but with AO-correction, visual resolution was significantly worse than normal. This resolution deficit is not explained by cone loss alone and is suggestive of an associated loss of retinal ganglion cells. However, despite evidence suggesting a reduction in the number of retinal ganglion cells, retinotopic mapping showed no reduction in the cortical area of the foveal confluence. These results suggest that ganglion cell density may not govern the foveal overrepresentation in the cortex. We propose that it is not the number of afferents, but rather the content of the information relayed to the cortex from the retina across the visual field that governs cortical magnification, as under normal viewing conditions this information is similar in both BCM carriers and normal controls.

  4. An atomic switch of electron propagation on Ge (001) by tunneling carrier injection

    Science.gov (United States)

    Komori, Fumio

    2008-03-01

    Reversible switching of electronic conduction through atom manipulation is one of the important subjects of nanoscience. However, different conducting pathways were not clearly observed with atomic resolution. We have demonstrated the correlation between the change of surface atomic position by tunneling carrier injection and that of the reflection of one-dimensional (1D) surface-state electrons on the Ge (001) surface with a low density of heterogeneous Sn-Ge dimers. [1] On the clean Ge(001) surface, two adjacent atoms form a buckled dimer, and the buckling orientation of the Ge dimer can be locally and reversibly controlled by carrier injection to the surface from the STM tip. [2] The unoccupied surface &*circ;-electron behaves like a 1D free electron along the Ge dimer row. When Sn atoms are deposited on the clean Ge(001) surface at room temperature, buckled dimers originating from the Sn atoms are formed at the Ge dimer position in the surface. [3] An atomic switch is realized for the &*circ; electrons in the Ge dimer- row direction by injection carriers to reversibly flip the buckling orientation of a single Sn-Ge dimer in the dimer row. When the Sn atom of the heterogeneous dimer is at the lower position, the 1D electrons are reflected and a standing wave of this state is observed. Whereas, when it is at the upper position, the 1D electrons pass through the heterogeneous dimer, and no standing wave is observed. In this state, the lower atom of the dimer is Ge, and the &*circ; state at the dimer is little different from that of the Ge-Ge dimers. [1] K. Tomatsu, K. Nakatsuji, T. Iimori, Y. Takagi, H. Kusuhara, A. Ishii, F. Komori; Science 315, 1696, 2007. [2] Y. Takagi, Y. Yoshimoto, K. Nakatsuji, F. Komori; Surf. Sci. 559, 1, 2004. [3] K. Tomatsu, K. Nakatsuji, T. Iimori, F. Komori; Surf. Sci. 601, 1736, 2007.

  5. Method of immobilizing water-soluble bioorganic compounds on a capillary-porous carrier

    Science.gov (United States)

    Ershov, Gennady Moiseevich; Timofeev, Eduard Nikolaevich; Ivanov, Igor Borisovich; Florentiev, Vladimir Leonidovich; Mirzabekov, Andrei Darievich

    1998-01-01

    The method for immobilizing water-soluble bioorganic compounds to capillary-porous carrier comprises application of solutions of water-soluble bioorganic compounds onto a capillary-porous carrier, setting the carrier temperature equal to or below the dew point of the ambient air, keeping the carrier till appearance of water condensate and complete swelling of the carrier, whereupon the carrier surface is coated with a layer of water-immiscible nonluminescent inert oil and is allowed to stand till completion of the chemical reaction of bonding the bioorganic compounds with the carrier.

  6. Research on energy efficiency design index for sea-going LNG carriers

    Science.gov (United States)

    Lin, Yan; Yu, Yanyun; Guan, Guan

    2014-12-01

    This paper describes the characteristics of liquefied natural gas (LNG) carriers briefly. The LNG carrier includes power plant selection, vapor treatment, liquid cargo tank type, etc. Two parameters—fuel substitution rate and recovery of boil of gas (BOG) volume to energy efficiency design index (EEDI) formula are added, and EEDI formula of LNG carriers is established based on ship EEDI formula. Then, based on steam turbine propulsion device of LNG carriers, mathematical models of LNG carriers' reference line value are established in this paper. By verification, the EEDI formula of LNG carriers described in this paper can provide a reference for LNG carrier EEDI calculation and green shipbuilding.

  7. Gluon density in nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Ayala, A.L. [Rio Grande do Sul Univ., Porto Alegre, RS (Brazil). Inst. de Fisica][Pelotas Univ., RS (Brazil). Inst. de Fisica e Matematica; Ducati, M.B.G. [Rio Grande do Sul Univ., Porto Alegre, RS (Brazil). Inst. de Fisica; Levin, E.M. [Fermi National Accelerator Lab., Batavia, IL (United States)][Nuclear Physics Inst., St. Petersburg (Russian Federation)

    1996-10-01

    In this talk we present our detailed study (theory and numbers) on the shadowing corrections to the gluon structure functions for nuclei. Starting from rather controversial information on the nucleon structure function which is originated by the recent HERA data, we develop the Glauber approach for the gluon density in a nucleus based on Mueller formula and estimate the value of the shadowing corrections in this case. Then we calculate the first corrections to the Glauber approach and show that these corrections are big. Based on this practical observation we suggest the new evolution equation which takes into account the shadowing corrections and solve it. We hope to convince you that the new evolution equation gives a good theoretical tool to treat the shadowing corrections for the gluons density in a nucleus and, therefore, it is able to provide the theoretically reliable initial conditions for the time evolution of the nucleus-nucleus cascade. The initial conditions should be fixed both theoretically and phenomenologically before to attack such complicated problems as the mixture of hard and soft processes in nucleus-nucleus interactions at high energy or the theoretically reliable approach to hadron or/and parton cascades for high energy nucleus-nucleus interaction. 35 refs., 24 figs., 1 tab.

  8. Oblique dust density waves

    Science.gov (United States)

    Piel, Alexander; Arp, Oliver; Menzel, Kristoffer; Klindworth, Markus

    2007-11-01

    We report on experimental observations of dust density waves in a complex (dusty) plasma under microgravity. The plasma is produced in a radio-frequency parallel-plate discharge (argon, p=15Pa, U=65Vpp). Different sizes of dust particles were used (3.4 μm and 6.4μm diameter). The low-frequency (f 11Hz) dust density waves are naturally unstable modes, which are driven by the ion flow in the plasma. Surprisingly, the wave propagation direction is aligned with the ion flow direction in the bulk plasma but becomes oblique at the boundary of the dust cloud with an inclination of 60^o with respect to the plasma boundary. The experimental results are compared with a kinetic model in the electrostatic approximation [1] and a fluid model [2]. Moreover, the role of dust surface waves is discussed. [1] M. Rosenberg, J. Vac. Sci. Technol. A 14, 631 (1996) [2] A. Piel et al, Phys. Rev. Lett. 97, 205009 (2006)

  9. Local-oscillator-free wireless-optical-wireless data link at 1.25 Gbit/s over a 40 GHz carrier employing carrier preservation and envelope detection

    DEFF Research Database (Denmark)

    Seoane, Jorge; Tafur Monroy, Idelfonso; Prince, Kamau;

    2008-01-01

    A local-oscillator-free wireless-optical-wireless system at 1.25 Gb/s over a 40 GHz carrier and 100 km of NZDSF is demonstrated employing optical half-wave rectification, carrier remodulation and envelope detection.......A local-oscillator-free wireless-optical-wireless system at 1.25 Gb/s over a 40 GHz carrier and 100 km of NZDSF is demonstrated employing optical half-wave rectification, carrier remodulation and envelope detection....

  10. Estimation of springing response for 550 000 DWT ore carrier

    Science.gov (United States)

    Adenya, Christiaan Adika; Ren, Huilong; Li, Hui; Wang, Di

    2016-09-01

    The desire to benefit from economy of scale is one of the major driving forces behind the continuous growth in ship sizes. However, models of new large ships need to be thoroughly investigated to determine the carrier's response in waves. In this work, experimental and numerical assessments of the motion and load response of a 550,000 DWT ore carrier are performed using prototype ships with softer stiffness, and towing tank tests are conducted using a segmented model with two schemes of softer stiffness. Numerical analyses are performed employing both rigid body and linear hydroelasticity theories using an in-house program and a comparison is then made between experimental and numerical results to establish the influence of stiffness on the ore carrier's springing response. Results show that softer stiffness models can be used when studying the springing response of ships in waves.

  11. Augmenting drug-carrier compatibility improves tumour nanotherapy efficacy

    Science.gov (United States)

    Zhao, Yiming; Fay, François; Hak, Sjoerd; Manuel Perez-Aguilar, Jose; Sanchez-Gaytan, Brenda L.; Goode, Brandon; Duivenvoorden, Raphaël; de Lange Davies, Catharina; Bjørkøy, Astrid; Weinstein, Harel; Fayad, Zahi A.; Pérez-Medina, Carlos; Mulder, Willem J. M.

    2016-04-01

    A major goal of cancer nanotherapy is to use nanoparticles as carriers for targeted delivery of anti-tumour agents. The drug-carrier association after intravenous administration is essential for efficient drug delivery to the tumour. However, a large number of currently available nanocarriers are self-assembled nanoparticles whose drug-loading stability is critically affected by the in vivo environment. Here we used in vivo FRET imaging to systematically investigate how drug-carrier compatibility affects drug release in a tumour mouse model. We found the drug's hydrophobicity and miscibility with the nanoparticles are two independent key parameters that determine its accumulation in the tumour. Next, we applied these findings to improve chemotherapeutic delivery by augmenting the parent drug's compatibility; as a result, we achieved better antitumour efficacy. Our results help elucidate nanomedicines' in vivo fate and provide guidelines for efficient drug delivery.

  12. Prospects of carrier screening of aspartylglucosaminuria in Finland.

    Science.gov (United States)

    Hietala, M; Grön, K; Syvänen, A C; Peltonen, L; Aula, P

    1993-01-01

    The frequency of carriers of the AGUFin mutation, the predominant mutation causing aspartylglucosaminuria in Finland, was determined in a population sample comprising 553 newborns from a delivery hospital in southern Finland, and 607 from a hospital in northern Finland. The AGUFin point mutation was identified from cord blood samples using the PCR-based, solid-phase minisequencing method. Nineteen carriers of the AGUFin mutation were detected, 8 (1:69) in the sample from the southern and 11 (1:55) from the northern population, respectively. The solid-phase minisequencing method proved to be rapid and convenient for the detection of the AGUFin mutation, and can readily be applied in large-scale carrier screening at the population level.

  13. Spectral dependence of carrier lifetimes in silicon for photovoltaic applications

    Science.gov (United States)

    Roller, John F.; Li, Yu-Tai; Dagenais, Mario; Hamadani, Behrang H.

    2016-12-01

    Charge carrier lifetimes in photovoltaic-grade silicon wafers were measured by a spectral-dependent, quasi-steady-state photoconductance technique. Narrow bandwidth light emitting diodes were used to excite excess charge carriers within the material, and the effective lifetimes of these carriers were measured as a function of wavelength and intensity. The dependence of the effective lifetime on the excitation wavelength was then analyzed within the context of an analytical model relating effective lifetime to the bulk lifetime and surface recombination velocity of the material. The agreement between the model and the experimental data provides validation for this technique to be used at various stages of the solar cell production line to investigate the quality of the passivation layers and the bulk properties of the material.

  14. DESIGN OF WAVELET PACKET BASED MODEL FOR MULTI CARRIER MODULATION

    Directory of Open Access Journals (Sweden)

    MIHIR NARAYAN MOHANTY

    2012-04-01

    Full Text Available In current scenario Multi-Carrier modulation (MCM is considered an effective technique for both wire and wireless communications. It divides the entire bandwidth into several parallel sub-channels. This splitting is by dividing the transmit data into several parallel low-bit-rate data streams and then to modulate the carrierscorresponding to those sub-channels. Though MCM technique uses Orthogonal Frequency Division Multiplexing (OFDM model, it is very sensitive to Carrier Frequency Offset (CFO, that leads to a severedistortion in subcarrier orthogonality and causes inter channel interference (ICI. In this paper, Wavelet Packet Transform is designed for the model of MCM as a novel alternative to the most exiting Orthogonal Frequency Division Multiplexing (OFDM technique, because of its time frequency representation and lower side lobes intransmitted signals, that reduces inter carrier interference (ICI, and inter symbol interference (ISI. Performance analysis is investigated for such model. Simulation results show a significant enhancement in terms of spectral efficiency.

  15. Is oral absorption of vigabatrin carrier-mediated?

    DEFF Research Database (Denmark)

    Nøhr, M. K.; Juul, R. V.; Thale, Z. I.;

    2015-01-01

    by significant increases in the apparent Michaelis constant. Based on the mechanistic model, a high capacity low affinity carrier is proposed to be involved in intestinal vigabatrin absorption. PAT1-ligands increased the Michaelis constant of vigabatrin after oral co-administration indicating that this carrier......The aim of the study was to investigate the intestinal transport mechanisms responsible for vigabatrin absorption in rats by developing a population pharmacokinetic (PK) model of vigabatrin oral absorption. The PK model was used to investigate whether vigabatrin absorption was carrier......-mediated and if the proton-coupled amino acid transporter 1 (PAT1) was involved in the absorption processes. Vigabatrin (0.3-300 mg/kg) was administered orally or intravenously to Sprague Dawley rats in the absence or presence of PAT1-ligands l-proline, l-tryptophan or sarcosine. The PK profiles of vigabatrin were described...

  16. LNG Carrier Market: The Next Main Battleground For Shipbuilding Enterprises

    Institute of Scientific and Technical Information of China (English)

    Han Guang

    2012-01-01

    Last year, 51 LNG carriers were delivered in the world. From January to February this year, more than 10 LNG carriers have been deliveredglobally. Some shipowners are planning to expand LNG carrier fleet, which is a stark contrast to the look of the three main ship types which is embarrassing. As the recognized clean fuel, natural gas plays an important role in carbon politics and low carbon economy. At present, LNG powered vessel is growing vigorously. LNG fueled vessels have also emerged in Europe. Now, discussion about natural gas application on inland water transport is gradually warming up. Although there are still many technical problems to be solved about LNG powered vessel, the trend is irreversible.

  17. Cultural aspects of healthy BRCA carriers from two ethnocultural groups.

    Science.gov (United States)

    Navarro de Souza, Alicia; Groleau, Danielle; Loiselle, Carmen G; Foulkes, William D; Wong, Nora

    2014-05-01

    We explored the experiences of Ashkenazi Jewish and French Canadian women and meanings attributed to their hereditary breast and ovarian cancer (HBOC) risk. We purposively sampled 40 BRCA1 or BRCA2 (BRCA) mutation carriers and conducted theoretically driven semistructured interviews. According to content analysis, participants from these two ethnocultural groups held divergent meanings associated with being a BRCA carrier and different views pertaining to the illness experience and risk awareness. All participants identified a genetic basis; however, the French Canadian women also expressed other causes. The French Canadian women reported not knowing other carriers in their social environment, whereas the Ashkenazi Jewish women emphasized a strong sense of community contributing to their ethnic risk awareness. Based on these findings, we suggest that French Canadian women could benefit from greater awareness of the HBOC genetic risk and that health care providers should consider ethnically related and individual-based experiences and meanings during counseling.

  18. Carrier multiplication in silicon nanocrystals: ab initio results

    Directory of Open Access Journals (Sweden)

    Ivan Marri

    2015-02-01

    Full Text Available One of the most important goals in the field of renewable energy is the development of original solar cell schemes employing new materials to overcome the performance limitations of traditional solar cell devices. Among such innovative materials, nanostructures have emerged as an important class of materials that can be used to realize efficient photovoltaic devices. When these systems are implemented into solar cells, new effects can be exploited to maximize the harvest of solar radiation and to minimize the loss factors. In this context, carrier multiplication seems one promising way to minimize the effects induced by thermalization loss processes thereby significantly increasing the solar cell power conversion. In this work we analyze and quantify different types of carrier multiplication decay dynamics by analyzing systems of isolated and coupled silicon nanocrystals. The effects on carrier multiplication dynamics by energy and charge transfer processes are also discussed.

  19. Valley-symmetry-preserved transport in ballistic graphene layers with gate-defined carrier guiding

    Science.gov (United States)

    Kim, Minsoo; Choi, Ji-Hae; Lee, Sang-Hoon; Watanabe, Kenji; Taniguchi, Takashi; Jhi, Seung-Hoon; Lee, Hu-Jong

    Zigzag graphene nanoribbons are predicted to exhibit interesting electronic properties stemming from its Dirac band structure. However, to date, investigation of them is highly limited because of the defects and the roughness at the edges, which mix different valley properties of graphene. Here, we report the signature of conservation of valley symmetry in two types of quasi-1D ballistic graphene transport devices; one is a quantum point contact (QPC) and another is an Aharonov-Bohm (AB) interferometer. In measurements, charge carriers were confined in a potential well formed by the dual gates operation and the four-terminal magnetoconductance (MC) was measured with varying the carrier density, dc bias, and temperature. It exhibits the conductance quantization in steps of ΔG = 4e2/ h starting from G = (2, 6), 10 ×e2 / h in a constricted conducting channel of QPC-type devices. This behavior is similar to the one observed in zigzag graphene nanoribbons having edge localized channels. Our tight-binding calculation shows that quasi-1D charge flow on a graphene plane acts a zigzag-type nanoribbon, unless it is perfectly aligned along the armchair direction. In the AB interferometry, we observed h/ e periodic modulation of MC and the zero-field conductance minimum with a negative MC background.

  20. Anaerobic conversion of microalgal biomass to sustainable energy carriers--a review.

    Science.gov (United States)

    Lakaniemi, Aino-Maija; Tuovinen, Olli H; Puhakka, Jaakko A

    2013-05-01

    This review discusses anaerobic production of methane, hydrogen, ethanol, butanol and electricity from microalgal biomass. The amenability of microalgal biomass to these bioenergy conversion processes is compared with other aquatic and terrestrial biomass sources. The highest energy yields (kJ g(-1) dry wt. microalgal biomass) reported in the literature have been 14.8 as ethanol, 14.4 as methane, 6.6 as butanol and 1.2 as hydrogen. The highest power density reported from microalgal biomass in microbial fuel cells has been 980 mW m(-2). Sequential production of different energy carriers increases attainable energy yields, but also increases investment and maintenance costs. Microalgal biomass is a promising feedstock for anaerobic energy conversion processes, especially for methanogenic digestion and ethanol fermentation. The reviewed studies have mainly been based on laboratory scale experiments and thus scale-up of anaerobic utilization of microalgal biomass for production of energy carriers is now timely and required for cost-effectiveness comparisons.

  1. Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Antonino Parisi

    2015-01-01

    Full Text Available We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%.

  2. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  3. Theoretical study of deuteronated PAHs as carriers for IR emission features in the ISM

    CERN Document Server

    Buragohain, Mridusmita; Sarre, Peter; Onaka, Takashi; Sakon, Itsuki

    2015-01-01

    This work proposes deuteronated PAH (DPAH+ ) molecules as a potential carrier of the 4.4 and 4.65 {\\mu}m mid infrared emission bands that have been observationally detected towards the Orion and M17 regions. Density Functional Theory calculations have been carried out on DPAH+ molecules to see the variations in the spectral behaviour from that of a pure PAH. DPAH+ molecules show features that arise due to the stretching of the aliphatic C-D bond. Deuterated PAHs have been previously reported as carriers for such features. However, preferred conditions of ionization of PAHs in the interstellar medium (ISM) indicates the possibility of the formation of DPAH+ molecules. Comparison of band positions of DPAH+ s shows reasonable agreement with the observations. We report the effect of size of the DPAH+ molecules on band positions and intensities. This study also reports a D/H ratio ([D/H]sc ; the ratio of C-D stretch and C-H stretch bands per [D/H]num ) that is decreasing with the increasing size of DPAH+ s. It is ...

  4. Performance of carrier phase recovery for electronically dispersion compensated coherent systems.

    Science.gov (United States)

    Farhoudi, Ramtin; Ghazisaeidi, Amirhossein; Rusch, Leslie Ann

    2012-11-19

    An analytical approach taking into account carrier phase estimation (CPE) is presented to predict performance of quadrature phase shift-keying (QPSK) systems using coherent detection. Using this approach, system performance is found as a function of symbol rate, local oscillator (LO) linewidth, chromatic dispersion (CD) and signal-to-noise ratio (SNR). A new expression is derived for the covariance matrix of the conditional probability density function (pdf) of the decision statistic. This pdf is used to find bit error rate (BER) semi-analytically. Our analytical derivation assumes perfect removal of data modulation which corresponds to an ideal decision feedback (DF) carrier recovery. The validity of the analytical pdf for predicting BER is verified for a wide range of system parameters of interest in long haul systems. In addition, our semi-analytical BER provides a lower bound for the Viterbi-Viterbi (VV) BER, while showing the analytical BER previously proposed in the literature shows an overly pessimistic prediction of VV BER performance. We show that inaccuracy in previous analysis stems from overly simple model for the CPE when compensating large accumulated dispersion electronically. Finally, we study extension of our results to quadrature amplitude modulation (QAM). Preliminary simulation results are promising but the accuracy of our semi-analytical approach for predicting BER should be investigated further.

  5. Applications of time-resolved terahertz spectroscopy in ultrafast carrier dynamics

    Institute of Scientific and Technical Information of China (English)

    Qingli Zhou; Xicheng Zhang

    2011-01-01

    1.Introduction Terahertz time-domain spectroscopy (THz-TDS)[1-3]is a powerful and coherent free-space technique in which nearly single-cycle electromagnetic pulse is generated and detected using femtosecond optical pulses.THz-TDS has been utilized as one of the important methods for material characterization in the past two decades.Because transmission or reflection of THz waves is sensitive to carrier density and mobility,an ultrafast THz-TDS system is required to provide time-resolved capability of material characterization in the THz region[4-6].In the past decade,one of the widely used time-resolved THz spectroscopy methods is optical-pump/THz probe (O/T)spectroscopy[3].%Three time-resolved terahertz (THz) spectroscopy methods (optical-pump/THz-probe spectroscopy, THz-pump/THz-probe spectroscopy, and THz-pump/optical-probe spectroscopy) are reviewed. These are used to characterize ultrafast dynamics in photo- or THz-excited semiconductors, superconductors, nanomateri-als, and other materials. In particular, the optical-pump/THz-probe spectroscopy is utilized to investigate carrier dynamics and the related intervalley scattering phenomena in semiconductors. The recent development of intense pulsed THz sources is expected to affect the research in nonlinear THz responses of various materials.

  6. Vaccination Strategies against Malaria: novel carrier(s) more than a tour de force.

    Science.gov (United States)

    Tyagi, Rajeev K; Garg, Neeraj K; Sahu, Tejram

    2012-08-20

    The introduction of vaccine technology has facilitated an unprecedented multi-antigen approach to develop an effective vaccine against complex systemic inflammatory pathogens such as Plasmodium spp. that cause severe malaria. The capacity of multi subunit DNA vaccine encoding different stage Plasmodium antigens to induce CD8(+) cytotoxic T lymphocytes and interferon-γ responses in mice, monkeys and humans has been observed. Moreover, genetic vaccination may be capable of eliciting both cell mediated and humoral immune responses. The cytotoxic T cell responses are categorically needed against intracellular hepatic stage and humoral response with antibodies targeted against antigens from all stages of malaria parasite life cycle. Therefore, the key to success for any DNA based vaccine is to design a vector able to serve as a safe and efficient delivery system. This has encouraged the development of non-viral DNA-mediated gene transfer techniques such as liposome, virosomes, microsphere and nanoparticles. Efficient and relatively safe DNA transfection using lipoplexes makes them an appealing alternative to be explored for gene delivery. Also, liposome-entrapped DNA has been shown to enhance the potency of DNA vaccines, possibly by facilitating uptake of the plasmid by antigen-presenting cells (APC). Another recent technology using cationic lipids has been deployed and has generated substantial interest in this approach to gene transfer. In this review we discussed various aspects that could be decisive in the formulation of efficient and stable carrier system(s) for the development of malaria vaccine.

  7. Measuring the mass, density, and size of particles and cells using a suspended microchannel resonator

    Science.gov (United States)

    Godin, Michel; Bryan, Andrea K.; Burg, Thomas P.; Babcock, Ken; Manalis, Scott R.

    2007-09-01

    We demonstrate the measurement of mass, density, and size of cells and nanoparticles using suspended microchannel resonators. The masses of individual particles are quantified as transient frequency shifts, while the particles transit a microfluidic channel embedded in the resonating cantilever. Mass histograms resulting from these data reveal the distribution of a population of heterogeneously sized particles. Particle density is inferred from measurements made in different carrier fluids since the frequency shift for a particle is proportional to the mass difference relative to the displaced solution. We have characterized the density of polystyrene particles, Escherichia coli, and human red blood cells with a resolution down to 10-4g/cm3.

  8. Advantages of expanded universal carrier screening: what is at stake?

    Science.gov (United States)

    van der Hout, Sanne; Holtkamp, Kim Ca; Henneman, Lidewij; de Wert, Guido; Dondorp, Wybo J

    2016-01-01

    Expanded universal carrier screening (EUCS) entails a twofold expansion of long-standing (preconception) carrier screening programmes: it not only allows the simultaneous screening of a large list of diseases ('expanded'), but also refers to a pan-ethnic screening offer ('universal'). Advocates mention three main moral advantages of EUCS as compared with traditional (targeted and/or ancestry-based) forms of carrier screening: EUCS will (1) maximise opportunities for autonomous reproductive choice by informing prospective parents about a much wider array of reproductive risks; (2) provide equity of access to carrier testing services; (3) reduce the risk of stigmatisation. This empirical ethics study aims to widen this account and provide a balanced picture of the potential pros and cons of EUCS. Semi-structured interviews were conducted with 17 health (policy) professionals and representatives of patient organisations about their views on carrier screening including a possible EUCS scenario. Stakeholders acknowledged the potential benefits of EUCS, but also expressed five main moral concerns: (1) Does EUCS respond to an urgent problem or population need? (2) Is it possible to offer couples both understandable and sufficient information about EUCS? (3) How will societal views on 'reproductive responsibility' change as a result of EUCS? (4) Will EUCS lead to a lower level of care for high-risk populations? (5) Will EUCS reinforce disability-based stigmatisation? While having the potential to overcome some moral limits inherent in traditional carrier screening, EUCS comes with moral challenges of its own. More research is needed to (further) anticipate the ethical and practical consequences of EUCS.

  9. Gedanken Densities and Exact Constraints in Density Functional Theory

    CERN Document Server

    Perdew, John P; Sun, Jianwei; Burke, Kieron

    2014-01-01

    Approximations to the exact density functional for the exchange-correlation energy of a many-electron ground state can be constructed by satisfying constraints that are universal, i.e., valid for all electron densities. Gedanken densities are designed for the purpose of this construction, but need not be realistic. The uniform electron gas is an old gedanken density. Here, we propose a spherical two-electron gedanken density in which the dimensionless density gradient can be an arbitrary positive constant wherever the density is non-zero. The Lieb-Oxford lower bound on the exchange energy can be satisfied within a generalized gradient approximation (GGA) by bounding its enhancement factor or simplest GGA exchange-energy density. This enhancement-factor bound is well known to be sufficient, but our gedanken density shows that it is also necessary. The conventional exact exchange-energy density satisfies no such local bound, but energy densities are not unique, and the simplest GGA exchange-energy density is no...

  10. No-carrier-added [1.sup.11 c]putrescine

    Science.gov (United States)

    McPherson, Daniel W.; Fowler, Joanna S.; Wolf, Alfred P.

    1989-01-01

    The invention relates to a new radiolabeled imaging agent, no-carrier-added [1-.sup.11 C]putrescine, and to the use of this very pure material as a radiotracer with positron emission tomography for imaging brain tumors. The invention further relates to the synthesis of no-carrier-added [1-.sup.11 C]putrescine based on the Michael addition of potassium .sup.11 C-labeled cyanide to acrylonitrile followed by reduction of the .sup.11 C-labeled dinitrile. The new method is rapid and efficient and provides radiotracer with a specific activity greater than 1.4 curies per millimol and in a purity greater than 95%.

  11. Gettering improvements of minority-carrier lifetimesin solar grade silicon

    DEFF Research Database (Denmark)

    Osinniy, Viktor; Nylandsted Larsen, Arne; Dahl, Espen;

    2012-01-01

    processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each......The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature...

  12. Addressing Carrier Aggregation with Narrow-band Tunable Antennas

    DEFF Research Database (Denmark)

    Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert F.

    2016-01-01

    Enhancing the operating bandwidth of antennas is particularly challenging when the antenna is confined in a very restricted volume, as is the case for mobile phones. However, increasing the bandwidth provides higher data rates to the users. Consequently, the carrier aggregation technology has been...... standardized. This paper proposes an antenna design that can address the bandwidth issue of new radio frequency standards, while coping with carrier aggregation requirements. Specifically, the paper presents a dual-antenna system, where each antenna exhibits a dual resonance. The low-bands of the radio...

  13. Deterministic approaches for noncoherent communications with chaotic carriers

    Institute of Scientific and Technical Information of China (English)

    Liu Xiongying; Qiu Shuisheng; Francis. C. M. Lau

    2005-01-01

    Two problems are proposed. The first one is the noise decontamination of chaotic carriers using a deterministic approach to reconstruct pseudo trajectories, the second is the design of communications schemes with chaotic carriers. After presenting our deterministic noise decontamination algorithm, conventional chaos shift keying (CSK) communication system is applied. The difference of Euclidean distance between noisy trajectory and decontaminated trajectory in phase space could be utilized to non-coherently detect the sent symbol simply and effectively. It is shown that this detection method can achieve the bit error rate performance comparable to other non-coherent systems.

  14. Evaluation of carrier-mediated siRNA delivery

    DEFF Research Database (Denmark)

    Colombo, Stefano; Nielsen, Hanne Mørck; Foged, Camilla

    2013-01-01

    RNA delivered by use of carriers remains an analytical challenge. The purpose of the present study was to optimize and validate an analytical protocol based on stem-loop reverse transcription quantitative polymerase chain reaction (RT qPCR) to quantitatively monitor the carrier-mediated intracellular si......RNA delivery. An in vitro cell culture model system expressing enhanced green fluorescent protein (EGFP) was used to develop the assay, which was based on the intracellular quantification of a full-length double-stranded Dicer substrate siRNA by stem-loop RT qPCR. The result is a well-documented protocol...

  15. Improved Carrier Frequency Offset Estimation in OFDM Systems

    Institute of Scientific and Technical Information of China (English)

    LIU Xiao-ming; LIU Yuan-an

    2004-01-01

    A new carrier frequency offset estimation algorithm in Orthogonal Frequency Division Multiplexing (OFDM) systems is proposed. The proposed algorithm is an improvement of the Michele Morelli (M&M) algorithm. It also uses a training symbol which is divided into L>2 identical parts to estimate the carrier frequency offset, and the estimation range is ±L/2 the subcarrier spacing, but the performance of the proposed Maximum Likelihood (ML) algorithm is more robust and complex efficient than the M&M algorithm.

  16. NREL Studies Carrier Separation and Transport in Perovskite Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    2016-01-01

    NREL scientists studied charge separation and transport in perovskite solar cells by determining the junction structure across the solar device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates a p-n junction structure at the interface between titanium dioxide and perovskite. In addition, minority-carrier transport within the devices operates under diffusion/drift. Clarifying the fundamental junction structure provides significant guidance for future research and development. This NREL study points to the fact that improving carrier mobility is a critical factor for continued efficiency gains in perovskite solar cells.

  17. Identification of the Charge Carriers in Cerium Phosphate Ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Hannah L.; Jonghe, Lutgard C. De

    2010-06-02

    The total conductivity of Sr-doped cerium orthophosphate changes by nearly two orders of magnitude depending on the oxygen and hydrogen content of the atmosphere. The defect model for the system suggests that this is because the identity of the dominant charge carrier can change from electron holes to protons when the sample is in equilibrium with air vs. humidified hydrogen. In this work are presented some preliminary measurements that can help to clarify this exchange between carriers. The conduction behavior of a 2percent Sr-doped CePO4 sample under symmetric atmospheric conditions is investigated using several techniques, including AC impedance, H/D isotope effects, and chronoamperometry.

  18. Biotin Carboxyl Carrier Protein in Barley Chloroplast Membranes

    DEFF Research Database (Denmark)

    Kannangara, C. G.; Jense, C J

    1975-01-01

    Biotin localized in barley chloroplast lamellae is covalently bound to a single protein with an approximate molecular weight of 21000. It contains one mole of biotin per mole of protein and functions as a carboxyl carrier in the acetyl-CoA carboxylase reaction. The protein was obtained by solubil......Biotin localized in barley chloroplast lamellae is covalently bound to a single protein with an approximate molecular weight of 21000. It contains one mole of biotin per mole of protein and functions as a carboxyl carrier in the acetyl-CoA carboxylase reaction. The protein was obtained...

  19. Carrier recovery systems for arbitrarily mapped APK signals

    Science.gov (United States)

    Matsuo, Y.; Namiki, J.

    1982-10-01

    This paper introduces new carrier recovery techniques for general amplitude-phase keying (APK) modulation signals. The APK's include not only normal QAM but also arbitrarily mapped APK's, including an unsymmetrical APK. Difficulty in phase error detection due to signal mapping complexity, undesirable stable-lock point existence, and the contradiction between a fast acquisition and an accurate steady state performance can be overcome. For that purpose, an acquisition mode and a steady-state mode are used. Furthermore, read-only memories (ROM) are used for recognizing various system states. Random sampling controlled PLL noise performance and acquisition mode carrier recovery circuit pull-in performance with hysteresis property was obtained.

  20. Downlink transmission in multi-carrier systems with reduced feedback

    DEFF Research Database (Denmark)

    Wang, Yuanye; Pedersen, Klaus; Sørensen, Troels Bundgaard

    2010-01-01

    in this paper we address the problem of reducing the feedback for the downlink transmission in multi-carrier systems. In these systems multiple Component Carriers (CCs) are aggregated together to form a wide spectrum. Consequently, a large feedback overhead is required to report the channel quality...... information over such a wide bandwidth. We first generalize two existing feedback reduction techniques, and then propose a new one. These techniques use different feedback schemes across the CCs, or allow some CCs to be un-reported, for the purpose of reducing the amount of feedback. Performance...