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Sample records for carbon-nanotube field-effect transistors

  1. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Zhao, Chao; Wang, Qingxiao; Zhang, Qiang; Wang, Zhihong; Zhang, Xixiang; Abutaha, Anas I.; Alshareef, Husam N.

    2012-01-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed

  2. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2012-10-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

  3. Carbon nanotubes field-effect transistor for rapid detection of DHA

    International Nuclear Information System (INIS)

    Nguyen Thi Thuy; Nguyen Duc Chien; Mai Anh Tuan

    2012-01-01

    This paper presents the development of DNA sensor based on a network carbon nanotubes field effect transistor (CNTFETs) for Escherichia coli bacteria detection. The DNA sequences were immobilized on single-walled carbon nanotubes of transistor CNTFETs by using absorption. The hybridization of the DNA probe sequences and complementary DNA strands was detected by electrical conductance change from the electron doping by DNA hybridization directly on the carbon nanotubes leading to the change in the metal-CNTs barrier energy through the modulation of the electrode work function of carbon nanotubes field effect transistor. The results showed that the response time of DNA sensor was approximately 1 min and the sensitivity of DNA sensor was at 0.565 μA/nM; the detection limit of the sensor was about 1 pM of E. coli bacteria sample. (author)

  4. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar; Cheema, Hammad; Shamim, Atif

    2013-01-01

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  5. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar

    2013-05-11

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  6. Sensors based on carbon nanotube field-effect transistors and molecular recognition approaches

    OpenAIRE

    Cid Salavert, Cristina Carlota

    2009-01-01

    The general objective of this thesis is to develop chemical sensors whose sensing capacities are based on the principle of molecular recognition and where the transduction is carried out by single-walled carbon nanotubes (SWCNT).The sensing device used is the carbon nanotube field-effect transistor (CNTFET). The new structure of the CNTFET allows nanotubes to be integrated at the surface of the devices, thus exploiting SWCNTs' sensitivity to changes in their environment. The functionalization...

  7. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N.; Zhang, Yafei; Zhang, Xixiang

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  8. CMOS-based carbon nanotube pass-transistor logic integrated circuits

    Science.gov (United States)

    Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

    2012-01-01

    Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

  9. Calibration method for a carbon nanotube field-effect transistor biosensor

    International Nuclear Information System (INIS)

    Abe, Masuhiro; Murata, Katsuyuki; Ataka, Tatsuaki; Matsumoto, Kazuhiko

    2008-01-01

    An easy calibration method based on the Langmuir adsorption theory is proposed for a carbon nanotube field-effect transistor (NTFET) biosensor. This method was applied to three NTFET biosensors that had approximately the same structure but exhibited different characteristics. After calibration, their experimentally determined characteristics exhibited a good agreement with the calibration curve. The reason why the observed characteristics of these NTFET biosensors differed among the devices was that the carbon nanotube (CNT) that formed the channel was not uniform. Although the controlled growth of a CNT is difficult, it is shown that an NTFET biosensor can be easy calibrated using the proposed calibration method, regardless of the CNT channel structures

  10. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi

    2014-07-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  11. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi; Yue, Weisheng; Guo, Zaibing; Yang, Yang; Wang, Xianbin; Syed, Ahad A.; Zhang, Yafei

    2014-01-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  12. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

    Science.gov (United States)

    Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

    2012-08-19

    The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

  13. Electroluminescence from single-wall carbon nanotube network transistors.

    Science.gov (United States)

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  14. Single Nucleotide Polymorphism Detection Using Au-Decorated Single-Walled Carbon Nanotube Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Keum-Ju Lee

    2011-01-01

    Full Text Available We demonstrate that Au-cluster-decorated single-walled carbon nanotubes (SWNTs may be used to discriminate single nucleotide polymorphism (SNP. Nanoscale Au clusters were formed on the side walls of carbon nanotubes in a transistor geometry using electrochemical deposition. The effect of Au cluster decoration appeared as hole doping when electrical transport characteristics were examined. Thiolated single-stranded probe peptide nucleic acid (PNA was successfully immobilized on Au clusters decorating single-walled carbon nanotube field-effect transistors (SWNT-FETs, resulting in a conductance decrease that could be explained by a decrease in Au work function upon adsorption of thiolated PNA. Although a target single-stranded DNA (ssDNA with a single mismatch did not cause any change in electrical conductance, a clear decrease in conductance was observed with matched ssDNA, thereby showing the possibility of SNP (single nucleotide polymorphism detection using Au-cluster-decorated SWNT-FETs. However, a power to discriminate SNP target is lost in high ionic environment. We can conclude that observed SNP discrimination in low ionic environment is due to the hampered binding of SNP target on nanoscale surfaces in low ionic conditions.

  15. Error correcting circuit design with carbon nanotube field effect transistors

    Science.gov (United States)

    Liu, Xiaoqiang; Cai, Li; Yang, Xiaokuo; Liu, Baojun; Liu, Zhongyong

    2018-03-01

    In this work, a parallel error correcting circuit based on (7, 4) Hamming code is designed and implemented with carbon nanotube field effect transistors, and its function is validated by simulation in HSpice with the Stanford model. A grouping method which is able to correct multiple bit errors in 16-bit and 32-bit application is proposed, and its error correction capability is analyzed. Performance of circuits implemented with CNTFETs and traditional MOSFETs respectively is also compared, and the former shows a 34.4% decrement of layout area and a 56.9% decrement of power consumption.

  16. Performance of Solution Processed Carbon Nanotube Field Effect Transistors with Graphene Electrodes

    OpenAIRE

    Gangavarapu, P R Yasasvi; Lokesh, Punith Chikkahalli; Bhat, K N; Naik, A K

    2016-01-01

    This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction using temperature dependent IV measurements. The estimated barrier height in our devices for both holes and electrons is close to zero or slightly negative indicating the Ohmic contact of graphene with the valence and conduction bands of CNTs. In addition,...

  17. Noise characteristics of single-walled carbon nanotube network transistors

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-01-01

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors

  18. Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si3N4 passivation

    International Nuclear Information System (INIS)

    Peng Ning; Zhang Qing; Tan, O K; Marzari, Nicola

    2008-01-01

    Carbon nanotube field-effect transistors with Si 3 N 4 passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum current rectification ratio of 4.6 x 10 3 is observed. The rectifying characteristic vanishes in a vacuum but recovers once the devices are exposed to air. From our experiments, key parameters, such as critical gas pressure, adsorption energy of oxygen molecules and the contact barrier height modulation, can be obtained for studying the gaseous interaction in the carbon nanotube devices.

  19. In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

    International Nuclear Information System (INIS)

    Kim, Taekyung; Kim, Seongwon; Olson, Eric; Zuo Jianmin

    2008-01-01

    We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles

  20. Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

    KAUST Repository

    Li, Jingqi; Zhang, Xixiang

    2011-01-01

    The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.

  1. Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

    KAUST Repository

    Li, Jingqi

    2011-09-01

    The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.

  2. Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

    Science.gov (United States)

    Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

    2010-01-01

    Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

  3. Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

    International Nuclear Information System (INIS)

    Bethoux, J.-M.; Happy, H.; Dambrine, G.; Derycke, V.; Goffman, M.; Bourgoin, J.-P.

    2006-01-01

    Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H 21 | 2 ) cut-off frequency (f t ) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed

  4. Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Park, Wanjun

    2009-01-01

    The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L c = 2-10 μm were investigated. Randomly networked SWNTs were directly grown for the two different densities of ρ ∼ 25 μm -2 and ρ ∼ 50 μm -2 by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm 2 V -1 s -1 for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths.

  5. Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

    Energy Technology Data Exchange (ETDEWEB)

    Bethoux, J.-M. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France); Happy, H. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France)]. E-mail: henri.happy@iemn.univ-lille1.fr; Dambrine, G. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France); Derycke, V. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France); Goffman, M. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France); Bourgoin, J.-P. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France)

    2006-12-15

    Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H {sub 21}|{sup 2}) cut-off frequency (f {sub t}) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed.

  6. Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

    Science.gov (United States)

    2014-01-01

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  7. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Shibo; Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn; Si, Jia; Zhong, Donglai; Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

    2014-08-11

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  8. Advances in NO2 sensing with individual single-walled carbon nanotube transistors.

    Science.gov (United States)

    Chikkadi, Kiran; Muoth, Matthias; Roman, Cosmin; Haluska, Miroslav; Hierold, Christofer

    2014-01-01

    The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistors that are to be used in sensing applications. Recently, contact-passivated, open-channel individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis, drift and low-frequency noise in carbon nanotube transistors. While open challenges such as large-scale fabrication, selectivity tuning and noise reduction still remain, these results demonstrate considerable progress in transforming the promise of carbon nanotube properties into functional ultra-low power, highly sensitive gas sensors.

  9. Selective detection of SO2 at room temperature based on organoplatinum functionalized single-walled carbon nanotube field effect transistors

    NARCIS (Netherlands)

    Cid, C.C.; Jimenez-Cadena, G.; Riu, J.; Maroto, A.; Rius, F.X.; Batema, G.D.; van Koten, G.

    2009-01-01

    We report a field effect transistor (FET) based on a network of single-walled carbon nanotubes (SWCNTs) that for the first time can selectively detect a single gaseous molecule in air by chemically functionalizing the SWCNTs with a selective molecular receptor. As a target model we used SO2. The

  10. Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Cheng, Yingchun; Guo, Zaibing; Wang, Zhihong; Zhu, Zhiyong; Zhang, Qing; Chan-Park, Chanpark; Schwingenschlö gl, Udo; Zhang, Xixiang

    2013-01-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.

  11. Effect of the metal work function on the electrical properties of carbon nanotube network transistors

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Ko, Dae Young; Kil, Joon Pyo; Lee, Jung Wha; Park, Wan Jun

    2012-01-01

    A nearly perfect semiconducting single-walled carbon nanotube random network thin film transistor array was fabricated, and its reproducible transport properties were investigated. The effects of the metal work function for both the source and the drain on the electrical properties of the transistors were systematically investigated. Three different metal electrodes, Al, Ti, and Pd, were employed. As the metal work function increased, p-type behavior became dominant, and the field effect hole mobility dramatically increased. Also, the Schottky barrier of the Ti-nanotube contact was invariant to the molecular adsorption of species in air.

  12. Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

    Science.gov (United States)

    Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

    2015-05-01

    Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

  13. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñoz, Enrique

    2017-01-24

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

  14. Ultraclean individual suspended single-walled carbon nanotube field effect transistor

    Science.gov (United States)

    Liu, Siyu; Zhang, Jian; Nshimiyimana, Jean Pierre; Chi, Xiannian; Hu, Xiao; Wu, Pei; Liu, Jia; Wang, Gongtang; Sun, Lianfeng

    2018-04-01

    In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (˜50 kΩ), mobility of 8600 cm2 V-1 s-1 and large on/off ratio (˜105) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

  15. The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

    Science.gov (United States)

    Xiao, Z; Camino, F E

    2009-04-01

    Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

  16. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa; Fahad, Hossain M.; Smith, Casey E.; Rojas, Jhonathan Prieto

    2015-01-01

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  17. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  18. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  19. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.; Hussain, Muhammad Mustafa

    2015-01-01

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  20. Label-free detection of DNA hybridization using carbon nanotube network field-effect transistors

    Science.gov (United States)

    Star, Alexander; Tu, Eugene; Niemann, Joseph; Gabriel, Jean-Christophe P.; Joiner, C. Steve; Valcke, Christian

    2006-01-01

    We report carbon nanotube network field-effect transistors (NTNFETs) that function as selective detectors of DNA immobilization and hybridization. NTNFETs with immobilized synthetic oligonucleotides have been shown to specifically recognize target DNA sequences, including H63D single-nucleotide polymorphism (SNP) discrimination in the HFE gene, responsible for hereditary hemochromatosis. The electronic responses of NTNFETs upon single-stranded DNA immobilization and subsequent DNA hybridization events were confirmed by using fluorescence-labeled oligonucleotides and then were further explored for label-free DNA detection at picomolar to micromolar concentrations. We have also observed a strong effect of DNA counterions on the electronic response, thus suggesting a charge-based mechanism of DNA detection using NTNFET devices. Implementation of label-free electronic detection assays using NTNFETs constitutes an important step toward low-cost, low-complexity, highly sensitive and accurate molecular diagnostics. hemochromatosis | SNP | biosensor

  1. Investigation of Schottky-Barrier carbon nanotube field-effect transistor by an efficient semi-classical numerical modeling

    International Nuclear Information System (INIS)

    Chen Changxin; Zhang Wei; Zhao Bo; Zhang Yafei

    2009-01-01

    An efficient semi-classical numerical modeling approach has been developed to simulate the coaxial Schottky-barrier carbon nanotube field-effect transistor (SB-CNTFET). In the modeling, the electrostatic potential of the CNT is obtained by self-consistently solving the analytic expression of CNT carrier distribution and the cylindrical Poisson equation, which significantly enhances the computational efficiency and simultaneously present a result in good agreement to that obtained from the non-equilibrium Green's function (NEGF) formalism based on the first principle. With this method, the effects of the CNT diameter, power supply voltage, thickness and dielectric constant of gate insulator on the device performance are investigated.

  2. Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, T. G. [Samsung Advanced Institute of Technology, Research center for Time-domain Nano-functional Device, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Department of Electrical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Kim, U. J.; Lee, E. H. [Samsung Advanced Institute of Technology, Frontier Research Laboratory, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Hwang, J. S. [School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of); Hwang, S. W., E-mail: swnano.hwang@samsung.com, E-mail: sangsig@korea.ac.kr [Samsung Advanced Institute of Technology, Research center for Time-domain Nano-functional Device, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Samsung Advanced Institute of Technology, Frontier Research Laboratory, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Kim, S., E-mail: swnano.hwang@samsung.com, E-mail: sangsig@korea.ac.kr [Department of Electrical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of)

    2013-12-07

    We have systematically analyzed the effect of strain on the electrical properties of flexible field effect transistors with a single-walled carbon nanotube (SWCNT) network on a polyethersulfone substrate. The strain was applied and estimated at the microscopic scale (<1 μm) by using scanning electron microscope (SEM) equipped with indigenously designed special bending jig. Interestingly, the strain estimated at the microscopic scale was found to be significantly different from the strain calculated at the macroscopic scale (centimeter-scale), by a factor of up to 4. Further in-depth analysis using SEM indicated that the significant difference in strain, obtained from two different measurement scales (microscale and macroscale), could be attributed to the formation of cracks and tears in the SWCNT network, or at the junction of SWCNT network and electrode during the strain process. Due to this irreversible morphological change, the electrical properties, such as on current level and field effect mobility, lowered by 14.3% and 4.6%, respectively.

  3. Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors

    International Nuclear Information System (INIS)

    Kang, Donghun; Park, Wanjun

    2008-01-01

    We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)

  4. Carbon nanotube transistor based high-frequency electronics

    Science.gov (United States)

    Schroter, Michael

    At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

  5. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

    Science.gov (United States)

    Orouji, Ali A.; Arefinia, Zahra

    2009-02-01

    For the first time, a new type of carbon nanotube field-effect transistor (CNTFET), the dual material gate (DMG)-CNTFET, is proposed and simulated using quantum simulation that is based on self-consistent solution between two-dimensional Poisson equation and Schrödinger equation with open boundary conditions, within the nonequilibrium Green's function (NEGF) framework. The proposed structure is similar to that of the conventional coaxial CNTFET with the exception that the gate of the DMG-CNTFET consists of two laterally contacting metals with different work functions. Simulation results show DMG-CNTFET significantly decreases leakage current, drain conductance and subthreshold swing, and increases on-off current ratio and voltage gain as compared to conventional CNTFET. We demonstrate that the potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain resulting in suppressed short-channel effects like the drain-induced barrier lowering (DIBL) and hot-carrier effect.

  6. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Sung Hun, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu; Shin, Jongmin; Cho, In-Tak; Lee, Jong-Ho, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu [Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Han, Sang Youn [Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Display R and D Center, Samsung Display Co., Yongin-city, Gyeongki-do 446–711 (Korea, Republic of); Lee, Dong Joon; Lee, Chi Hwan; Rogers, John A., E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2014-07-07

    This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

  7. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

    International Nuclear Information System (INIS)

    Jin, Sung Hun; Shin, Jongmin; Cho, In-Tak; Lee, Jong-Ho; Han, Sang Youn; Lee, Dong Joon; Lee, Chi Hwan; Rogers, John A.

    2014-01-01

    This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

  8. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

    Science.gov (United States)

    Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

    2016-08-10

    Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

  9. Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

    Science.gov (United States)

    Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

    2018-04-01

    In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

  10. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

    OpenAIRE

    Koswatta, Siyuranga O.; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2007-01-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc.,...

  11. Frequency, delay and velocity analysis for intrinsic channel region of carbon nanotube field effect transistors

    Directory of Open Access Journals (Sweden)

    P. Geetha

    2014-03-01

    Full Text Available Gate wrap around field effect transistor is preferred for its good channel control. To study the high frequency behaviour of the device, parameters like cut-off frequency, transit or delay time, velocity are calculated and plotted. Double-walled and array of channels are considered in this work for enhanced output and impedance matching of the device with the measuring equipment terminal respectively. The perfomance of double-walledcarbon nanotube is compared with single-walled carbon nanotube and found that the device with double-wall shows appreciable improvement in its characteristics. Analysis of these parameters are done with various values of source/drain length, gate length, tube diameters and channel densities. The maximum cut-off frequency is found to be 72.3 THz with corresponding velocity as 5x106 m/s for channel density as 3 and gate length as 11nm. The number of channel is varied from 3 to 21 and found that the perfromance of the device containing double-walled carbon nano tube is better for channel number lesser than or equal to 12. The proposed modelling can be used for designing devices to handle high speed applications of future generation.

  12. On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs) : Toward Robust and Scale Invariant SWNTs Transistors

    NARCIS (Netherlands)

    Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A.

    2017-01-01

    In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw

  13. High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States); Seo, Jung-Woo T.; Hersam, Mark C. [Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Gui, Hui [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States)

    2016-06-06

    In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.

  14. Carbon nanotube transistors with graphene oxide films as gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

  15. Progresses in organic field-effect transistors and molecular electronics

    Institute of Scientific and Technical Information of China (English)

    Wu Weiping; Xu Wei; Hu Wenping; Liu Yunqi; Zhu Daoben

    2006-01-01

    In the past years,organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).In this review,we briefly summarize the current status of organic field-effect transistors including materials design,device physics,molecular electronics and the applications of carbon nanotubes in molecular electronics.Future prospects and investigations required to improve the OFET performance are also involved.

  16. Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

    Energy Technology Data Exchange (ETDEWEB)

    Wongsaeng, Chalao [Department of Science, Faculty of Sciences and Agricultural Technology, Rajamangala University of Technology Lanna Tak, Tak 63000 (Thailand); Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singjai, Pisith, E-mail: pisith.s@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-04-07

    Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current–gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs.

  17. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

    Science.gov (United States)

    Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

    2007-05-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

  18. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    Science.gov (United States)

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  19. Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Myeongsoon; Kim, Don, E-mail: donkim@pknu.ac.kr

    2016-08-15

    The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r{sub Au-CNT}). Highly crystalline, straight CNTs were observed when the r{sub Au-CNT} exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r{sub Au-CNT} was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r{sub Au-CNT} = 250 nm) was ∼10{sup 4} S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO{sub 2}/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r{sub Au-CNT} = 250 nm), reached to 3.6 × 10{sup −4} A/V and 3.1 × 10{sup 4} cm{sup 2}/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10{sup 4} S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10{sup 4}. • The Au-CNT FET shows very high transconductance (g{sub m}) and carrier mobility (μ{sub h}).

  20. Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

    International Nuclear Information System (INIS)

    Lee, Myeongsoon; Kim, Don

    2016-01-01

    The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r_A_u_-_C_N_T). Highly crystalline, straight CNTs were observed when the r_A_u_-_C_N_T exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r_A_u_-_C_N_T was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r_A_u_-_C_N_T = 250 nm) was ∼10"4 S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO_2/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r_A_u_-_C_N_T = 250 nm), reached to 3.6 × 10"−"4 A/V and 3.1 × 10"4 cm"2/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10"4 S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10"4. • The Au-CNT FET shows very high transconductance (g_m) and carrier mobility (μ_h).

  1. Detection of influenza A virus using carbon nanotubes field effect transistor based DNA sensor

    Science.gov (United States)

    Tran, Thi Luyen; Nguyen, Thi Thuy; Huyen Tran, Thi Thu; Chu, Van Tuan; Thinh Tran, Quang; Tuan Mai, Anh

    2017-09-01

    The carbon nanotubes field effect transistor (CNTFET) based DNA sensor was developed, in this paper, for detection of influenza A virus DNA. Number of factors that influence the output signal and analytical results were investigated. The initial probe DNA, decides the available DNA strands on CNTs, was 10 μM. The hybridization time for defined single helix was 120 min. The hybridization temperature was set at 30 °C to get a net change in drain current of the DNA sensor without altering properties of any biological compounds. The response time of the DNA sensor was less than one minute with a high reproducibility. In addition, the DNA sensor has a wide linear detection range from 1 pM to 10 nM, and a very low detection limit of 1 pM. Finally, after 7-month storage in 7.4 pH buffer, the output signal of DNA sensor recovered 97%.

  2. Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor

    Science.gov (United States)

    Shah, Khurshed A.; Parvaiz, M. Shunaid

    2016-12-01

    The CNTFETs are the most promising advanced alternatives to the conventional FETs due to their outstanding structure and electrical properties. In this paper, we report the I-V characteristics of zig-zag (4, 0) semiconducting coaxial carbon nanotube field effect transistor (CNTFET) using the non-equilibrium Green's function formalism. The CNTFET is co-doped with two, four and six boron-nitrogen (BN) atoms separately near the electrodes using the substitutional doping method and the I-V characteristics were calculated for each model using Atomistic Tool Kit software (version 13.8.1) and its virtual interface. The results reveal that all models show negative differential resistance (NDR) behavior with the maximum peak to valley current ratio (PVCR) of 3.2 at 300 K for the four atom doped model. The NDR behavior is due to the band to band tunneling (BTBT) in semiconducting CNTFET and decreases as the doping in the channel increases. The results are beneficial for next generation designing of nano devices and their potential applications in electronic industry.

  3. Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

    Science.gov (United States)

    McCarthy, Mitchell

    The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

  4. Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.

    Science.gov (United States)

    Wang, Chuan; Badmaev, Alexander; Jooyaie, Alborz; Bao, Mingqiang; Wang, Kang L; Galatsis, Kosmas; Zhou, Chongwu

    2011-05-24

    This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

  5. Carbon nanotube transistors scaled to a 40-nanometer footprint.

    Science.gov (United States)

    Cao, Qing; Tersoff, Jerry; Farmer, Damon B; Zhu, Yu; Han, Shu-Jen

    2017-06-30

    The International Technology Roadmap for Semiconductors challenges the device research community to reduce the transistor footprint containing all components to 40 nanometers within the next decade. We report on a p-channel transistor scaled to such an extremely small dimension. Built on one semiconducting carbon nanotube, it occupies less than half the space of leading silicon technologies, while delivering a significantly higher pitch-normalized current density-above 0.9 milliampere per micrometer at a low supply voltage of 0.5 volts with a subthreshold swing of 85 millivolts per decade. Furthermore, we show transistors with the same small footprint built on actual high-density arrays of such nanotubes that deliver higher current than that of the best-competing silicon devices under the same overdrive, without any normalization. We achieve this using low-resistance end-bonded contacts, a high-purity semiconducting carbon nanotube source, and self-assembly to pack nanotubes into full surface-coverage aligned arrays. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  6. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  7. A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits.

    Science.gov (United States)

    Ghavami, Behnam; Raji, Mohsen; Pedram, Hossein

    2011-08-26

    Carbon nanotube field-effect transistors (CNFETs) show great promise as building blocks of future integrated circuits. However, synthesizing single-walled carbon nanotubes (CNTs) with accurate chirality and exact positioning control has been widely acknowledged as an exceedingly complex task. Indeed, density and chirality variations in CNT growth can compromise the reliability of CNFET-based circuits. In this paper, we present a novel statistical compact model to estimate the failure probability of CNFETs to provide some material and process guidelines for the design of CNFETs in gigascale integrated circuits. We use measured CNT spacing distributions within the framework of detailed failure analysis to demonstrate that both the CNT density and the ratio of metallic to semiconducting CNTs play dominant roles in defining the failure probability of CNFETs. Besides, it is argued that the large-scale integration of these devices within an integrated circuit will be feasible only if a specific range of CNT density with an acceptable ratio of semiconducting to metallic CNTs can be adjusted in a typical synthesis process.

  8. High performance dendrimer functionalized single-walled carbon nanotubes field effect transistor biosensor for protein detection

    Science.gov (United States)

    Rajesh, Sharma, Vikash; Puri, Nitin K.; Mulchandani, Ashok; Kotnala, Ravinder K.

    2016-12-01

    We report a single-walled carbon nanotube (SWNT) field-effect transistor (FET) functionalized with Polyamidoamine (PAMAM) dendrimer with 128 carboxyl groups as anchors for site specific biomolecular immobilization of protein antibody for C-reactive protein (CRP) detection. The FET device was characterized by scanning electron microscopy and current-gate voltage (I-Vg) characteristic studies. A concentration-dependent decrease in the source-drain current was observed in the regime of clinical significance, with a detection limit of ˜85 pM and a high sensitivity of 20% change in current (ΔI/I) per decade CRP concentration, showing SWNT being locally gated by the binding of CRP to antibody (anti-CRP) on the FET device. The low value of the dissociation constant (Kd = 0.31 ± 0.13 μg ml-1) indicated a high affinity of the device towards CRP analyte arising due to high anti-CRP loading with a better probe orientation on the 3-dimensional PAMAM structure.

  9. Field emission current from a junction field-effect transistor

    International Nuclear Information System (INIS)

    Monshipouri, Mahta; Abdi, Yaser

    2015-01-01

    Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

  10. Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

    Science.gov (United States)

    Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

    2014-06-13

    Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

  11. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    International Nuclear Information System (INIS)

    Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

    2015-01-01

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10 4 and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10 4  s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices

  12. Field emission current from a junction field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2015-04-15

    Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

  13. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d' Or, Quebec J9P 1Y3 (Canada); Kroeger, J. [NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada); Haddad, T. [Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada); Rosei, F. [Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  14. Fabrication and characterization of junctionless carbon nanotube field effect transistor for cholesterol detection

    Energy Technology Data Exchange (ETDEWEB)

    Barik, Md. Abdul, E-mail: abdulnpl@gmail.com; Dutta, Jiten Ch. [Department of Electronics and Communication Engineering, Tezpur University, Napaam, Tezpur, Assam 784028 (India)

    2014-08-04

    We have reported fabrication and characterization of polyaniline (PANI)/zinc oxide (ZnO) membrane-based junctionless carbon nanotube field effect transistor deposited on indium tin oxide glass plate for the detection of cholesterol (0.5–22.2 mM). Cholesterol oxidase (ChOx) has been immobilized on the PANI/ZnO membrane by physical adsorption technique. Electrical response has been recorded using digital multimeter (Agilent 3458A) in the presence of phosphate buffer saline of 50 mM, pH 7.0, and 0.9% NaCl contained in a glass pot. The results of response studies for cholesterol reveal linearity as 0.5–16.6 mM and improved sensitivity of 60 mV/decade in good agreement with Nernstian limit ∼59.2 mV/decade. The life time of this sensor has been found up to 5 months and response time of 1 s. The limit of detection with regression coefficient (r) ∼ 0.998 and Michaelis-Menten constant (K{sub m}) were found to be ∼0.25 and 1.4 mM, respectively, indicating high affinity of ChOx to cholesterol. The results obtained in this work show negligible interference with glucose and urea.

  15. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

    Science.gov (United States)

    Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

    2015-01-27

    Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

  16. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Science.gov (United States)

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  17. Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

    International Nuclear Information System (INIS)

    Wu, Meng-Yin; Chang, Tzu-Hsuan; Ma, Zhenqiang; Zhao, Juan; Xu, Feng; Jacobberger, Robert M.; Arnold, Michael S.

    2015-01-01

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10 4 and a field-effect mobility of 5 cm 2 V −1 s −1 under elongation and demonstrate invariant performance over 1000 stretching cycles

  18. Carbon nanotube based pressure sensor for flexible electronics

    International Nuclear Information System (INIS)

    So, Hye-Mi; Sim, Jin Woo; Kwon, Jinhyeong; Yun, Jongju; Baik, Seunghyun; Chang, Won Seok

    2013-01-01

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate

  19. Carbon nanotube based pressure sensor for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    So, Hye-Mi [Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of); Sim, Jin Woo [Advanced Nano Technology Ltd., Seoul 132-710 (Korea, Republic of); Kwon, Jinhyeong [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Yun, Jongju; Baik, Seunghyun [SKKU Advanced Institute of Nanotechnology (SAINT), Department of Energy Science and School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Chang, Won Seok, E-mail: paul@kimm.re.kr [Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of)

    2013-12-15

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.

  20. Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

    Science.gov (United States)

    Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

    2014-12-23

    Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

  1. Carbon nanotube network thin-film transistors on flexible/stretchable substrates

    Science.gov (United States)

    Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

    2016-03-29

    This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

  2. Targeting Antibodies to Carbon Nanotube Field Effect Transistors by Pyrene Hydrazide Modification of Heavy Chain Carbohydrates

    Directory of Open Access Journals (Sweden)

    Steingrimur Stefansson

    2012-01-01

    Full Text Available Many carbon nanotube field-effect transistor (CNT-FET studies have used immobilized antibodies as the ligand binding moiety. However, antibodies are not optimal for CNT-FET detection due to their large size and charge. Their size can prevent ligands from reaching within the Debye length of the CNTs and a layer of charged antibodies on the circuits can drown out any ligand signal. In an attempt to minimize the antibody footprint on CNT-FETs, we examined whether pyrene hydrazide modification of antibody carbohydrates could reduce the concentration required to functionalize CNT circuits. The carbohydrates are almost exclusively on the antibody Fc region and this site-specific modification could mediate uniform antibody orientation on the CNTs. We compared the hydrazide modification of anti-E. coli O157:H7 polyclonal antibodies to pyrenebutanoic acid succinimidyl ester-coated CNTs and carbodiimide-mediated antibody CNT attachment. Our results show that the pyrene hydrazide modification was superior to those methods with respect to bacteria detection and less than 1 nM labeled antibody was required to functionalize the circuits.

  3. Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Meng-Yin; Chang, Tzu-Hsuan; Ma, Zhenqiang [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Juan [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Xu, Feng; Jacobberger, Robert M.; Arnold, Michael S., E-mail: michael.arnold@wisc.edu [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-08-03

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10{sup 4} and a field-effect mobility of 5 cm{sup 2} V{sup −1} s{sup −1} under elongation and demonstrate invariant performance over 1000 stretching cycles.

  4. Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

    Science.gov (United States)

    Arefinia, Zahra; Orouji, Ali A.

    2009-02-01

    The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

  5. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  6. Effects of the gate dielectric on the subthreshold transport of carbon nanotube network transistors grown by using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Jeong, Seung Geun; Park, Wan Jun

    2010-01-01

    In this study, we investigated the subthreshold slope of random network carbon nanotube transistors with different geometries and passivations. Single-wall carbon nanotubes with lengths of 1-2 m were grown by using plasma-enhanced chemical vapor deposition to form the transistor channels. A critical channel length, where the subthreshold slope was saturated, of 7 μm was obtained. This was due to the percolational behavior of the nanotube random networks. With the dielectric passivation, the subthreshold slope was dramatically reduced from 9 V/decade to 0.9 V/decade by reducing interfacial trap sites, which then reduced the interface capacitance between the nanotube network and the gate dielectric.

  7. Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

    Science.gov (United States)

    Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan

    2018-02-01

    We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH- adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H2O/O2 molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔVT) is dominated by OH- desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔVT is dominated by OH- adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.

  8. Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

    Science.gov (United States)

    Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

    2017-01-11

    Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

  9. Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

    Energy Technology Data Exchange (ETDEWEB)

    Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

    2008-03-12

    This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

  10. Stationary scanning x-ray source based on carbon nanotube field emitters

    International Nuclear Information System (INIS)

    Zhang, J.; Yang, G.; Cheng, Y.; Gao, B.; Qiu, Q.; Lee, Y.Z.; Lu, J.P.; Zhou, O.

    2005-01-01

    We report a field emission x-ray source that can generate a scanning x-ray beam to image an object from multiple projection angles without mechanical motion. The key component of the device is a gated carbon nanotube field emission cathode with an array of electron emitting pixels that are individually addressable via a metal-oxide-semiconductor field effect transistor-based electronic circuit. The characteristics of this x-ray source are measured and its imaging capability is demonstrated. The device can potentially lead to a fast data acquisition rate for laminography and tomosynthesis with a simplified experimental setup

  11. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    International Nuclear Information System (INIS)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

    2014-01-01

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm 2 V −1 s −1 at low operating voltages ( 10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures

  12. 3D assembly of carbon nanotubes for fabrication of field-effect transistors through nanomanipulation and electron-beam-induced deposition

    International Nuclear Information System (INIS)

    Yu, Ning; Shi, Qing; Wang, Huaping; Huang, Qiang; Fukuda, Toshio; Nakajima, Masahiro; Yang, Zhan; Sun, Lining

    2017-01-01

    Three-dimensional carbon nanotube field-effect transistors (3D CNTFETs) possess predictable characteristics that rival those of planar CNTFETs and Si-based MOSFETs. However, due to the lack of a reliable assembly technology, they are rarely reported on, despite the amount of attention they receive. To address this problem, we propose the novel concept of a 3D CNTFET and develop its assembly strategy based on nanomanipulation and the electron-beam-induced deposition (EBID) technique inside a scanning electron microscope (SEM). In particular, the electrodes in our transistor design are three metallic cuboids of the same size, and their front, top and back surfaces are all wrapped up in CNTs. The assembly strategy is employed to build the structure through a repeated basic process of pick-up, placement, fixing and cutting of CNTs. The pick-up and placement is performed through one nanomanipulator with four degrees of freedom. Fixing is carried out through the EBID technique so as to improve the mechanical and electrical characteristics of the CNT/electrodes connection. CNT cutting is undertaken using the typical method of electrical breakdown. Experimental results showed that two CNTs were successfully assembled on the front sides of the cubic electrodes. This validates our assembly method for the 3D CNTFET. Also, when contact resistance was measured, tens of kilohms of resistance was observed at the CNT-EBID deposition-FET electrodes junction.. This manifests the electrical reliability of our assembly strategy. (paper)

  13. Intrinsic graphene field effect transistor on amorphous carbon films

    OpenAIRE

    Tinchev, Savcho

    2013-01-01

    Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

  14. Theoretical study of the performance for short channel carbon nanotube transistors with asymmetric contacts

    International Nuclear Information System (INIS)

    Zou Jianping; Zhang Qing; Marzari, Nicola; Li Hong

    2008-01-01

    We have simulated short channel carbon nanotube field-effect transistors with asymmetric source and drain contacts using a coupled mode space approach within the non-equilibrium Green's function framework. The simulated results show that the asymmetric conduction properties under positive and negative drain-to-source voltages are caused by the asymmetric Schottky barriers to carriers at the source and drain contacts. Under negative drain-to-source voltages, hole and electron conduction are dominated by thermionic emission and tunneling through the Schottky barrier, respectively, leading to the different subthreshold behaviors of the hole and electron conduction. With increasing channel length, short channel effects can be suppressed effectively and ON/OFF ratio can be improved

  15. Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?

    KAUST Repository

    Fahad, Hossain M.

    2012-06-27

    Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.

  16. Field penetration induced charge redistribution effects on the field emission properties of carbon nanotubes - a first-principle study

    International Nuclear Information System (INIS)

    Chen, C.-W.; Lee, M.-H.; Clark, S.J.

    2004-01-01

    The effect of field penetration induced charge redistribution on the field emission properties of carbon nanotubes (CNTs) have been studied by the first-principle calculations. It is found that the carbon nanotube becomes polarized under external electric field leading to a charge redistribution. The resulting band bending induced by field penetration into the nanotube tip surface can further reduce the effective workfunction of the carbon nanotubes. The magnitude of the redistributed charge ΔQ is found to be nearly linear to the applied external field strength. In addition, we found that the capped (9, 0) zigzag nanotube demonstrates better field emission properties than the capped (5, 5) armchair nanotube due to the fact that the charge redistribution of π electrons along the zigzag-like tube axis is easier than for the armchair-like tube. The density of states (DOS) of the capped region of the nanotube is found to be enhanced with a value 30% higher than that of the sidewall part for the capped (5, 5) nanotube and 40% for the capped (9, 0) nanotube under an electric field of 0.33 V/A. Such enhancements of the DOS at the carbon nanotube tip show that electrons near the Fermi level will emit more easily due to the change of the surface band structure resulting from the field penetration in a high field

  17. A spiking neuron circuit based on a carbon nanotube transistor

    International Nuclear Information System (INIS)

    Chen, C-L; Kim, K; Truong, Q; Shen, A; Li, Z; Chen, Y

    2012-01-01

    A spiking neuron circuit based on a carbon nanotube (CNT) transistor is presented in this paper. The spiking neuron circuit has a crossbar architecture in which the transistor gates are connected to its row electrodes and the transistor sources are connected to its column electrodes. An electrochemical cell is incorporated in the gate of the transistor by sandwiching a hydrogen-doped poly(ethylene glycol)methyl ether (PEG) electrolyte between the CNT channel and the top gate electrode. An input spike applied to the gate triggers a dynamic drift of the hydrogen ions in the PEG electrolyte, resulting in a post-synaptic current (PSC) through the CNT channel. Spikes input into the rows trigger PSCs through multiple CNT transistors, and PSCs cumulate in the columns and integrate into a ‘soma’ circuit to trigger output spikes based on an integrate-and-fire mechanism. The spiking neuron circuit can potentially emulate biological neuron networks and their intelligent functions. (paper)

  18. Bolometric-Effect-Based Wavelength-Selective Photodetectors Using Sorted Single Chirality Carbon Nanotubes

    Science.gov (United States)

    Zhang, Suoming; Cai, Le; Wang, Tongyu; Shi, Rongmei; Miao, Jinshui; Wei, Li; Chen, Yuan; Sepúlveda, Nelson; Wang, Chuan

    2015-01-01

    This paper exploits the chirality-dependent optical properties of single-wall carbon nanotubes for applications in wavelength-selective photodetectors. We demonstrate that thin-film transistors made with networks of carbon nanotubes work effectively as light sensors under laser illumination. Such photoresponse was attributed to photothermal effect instead of photogenerated carriers and the conclusion is further supported by temperature measurements. Additionally, by using different types of carbon nanotubes, including a single chirality (9,8) nanotube, the devices exhibit wavelength-selective response, which coincides well with the absorption spectra of the corresponding carbon nanotubes. This is one of the first reports of controllable and wavelength-selective bolometric photoresponse in macroscale assemblies of chirality-sorted carbon nanotubes. The results presented here provide a viable route for achieving bolometric-effect-based photodetectors with programmable response spanning from visible to near-infrared by using carbon nanotubes with pre-selected chiralities. PMID:26643777

  19. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

    Science.gov (United States)

    Shui, Qiong

    This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to

  20. Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.

    Science.gov (United States)

    Cao, Yu; Brady, Gerald J; Gui, Hui; Rutherglen, Chris; Arnold, Michael S; Zhou, Chongwu

    2016-07-26

    In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.

  1. T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

    Science.gov (United States)

    Che, Yuchi; Lin, Yung-Chen; Kim, Pyojae; Zhou, Chongwu

    2013-05-28

    In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.

  2. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

    Directory of Open Access Journals (Sweden)

    Michael Loong Peng Tan

    2013-01-01

    Full Text Available Long channel carbon nanotube transistor (CNT can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL effects in silicon MOSFET while sustaining the same unit area at higher current density.

  3. Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

    Energy Technology Data Exchange (ETDEWEB)

    Seo, M.; Kim, H.; Kim, Y. H.; Yun, H.; McAllister, K.; Lee, S. W., E-mail: leesw@konkuk.ac.kr [Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of); Na, J.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, B. J.; Kim, J. J.; Jeong, G. H. [Department of Nano Applied Engineering, Kangwon National University, Kangwon-do 200-701 (Korea, Republic of); Lee, I.; Kim, K. S. [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

    2015-07-20

    A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

  4. Flexible, transparent single-walled carbon nanotube transistors with graphene electrodes

    International Nuclear Information System (INIS)

    Jang, Sukjae; Jang, Houk; Lee, Youngbin; Suh, Daewoo; Baik, Seunghyun; Hong, Byung Hee; Ahn, Jong-Hyun

    2010-01-01

    This paper reports a mechanically flexible, transparent thin film transistor that uses graphene as a conducting electrode and single-walled carbon nanotubes (SWNTs) as a semiconducting channel. These SWNTs and graphene films were printed on flexible plastic substrates using a printing method. The resulting devices exhibited a mobility of ∼ 2 cm 2 V -1 s -1 , On/Off ratio of ∼ 10 2 , transmittance of ∼ 81% and excellent mechanical bendability.

  5. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  6. Rapid Co-optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations

    OpenAIRE

    Hills, Gage; Zhang, Jie; Shulaker, Max Marcel; Wei, Hai; Lee, Chi-Shuen; Balasingam, Arjun; Wong, H. -S. Philip; Mitra, Subhasish

    2015-01-01

    Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and severely degrade their anticipated energy and speed benefits. Joint exploration and optimization of CNT processing options and CNFET circuit design are required to overcome this outstanding challenge. Unfor...

  7. Flexible, transparent single-walled carbon nanotube transistors with graphene electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Sukjae; Jang, Houk; Lee, Youngbin; Suh, Daewoo; Baik, Seunghyun; Hong, Byung Hee; Ahn, Jong-Hyun, E-mail: ahnj@skku.edu, E-mail: byunghee@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2010-10-22

    This paper reports a mechanically flexible, transparent thin film transistor that uses graphene as a conducting electrode and single-walled carbon nanotubes (SWNTs) as a semiconducting channel. These SWNTs and graphene films were printed on flexible plastic substrates using a printing method. The resulting devices exhibited a mobility of {approx} 2 cm{sup 2} V{sup -1} s{sup -1}, On/Off ratio of {approx} 10{sup 2}, transmittance of {approx} 81% and excellent mechanical bendability.

  8. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Science.gov (United States)

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-02-01

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ˜50 s-SWCNTs μm-1. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 107 and 46 cm2 V-1 s-1, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm-1 and the on/off ratio is 4 × 105. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  9. Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

    KAUST Repository

    Hellstrom, Sondra L.; Jin, Run Zhi; Stoltenberg, Randall M.; Bao, Zhenan

    2010-01-01

    We report patterned deposition of carbon nanotube/conjugated polymer composites from solution with high nanotube densities and excellent feature resolution. Such composites are suited for use as electrodes in high-performance transistors

  10. On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.

    Science.gov (United States)

    Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A

    2017-06-01

    In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm 2 V -1 s -1 ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Carbon Based Transistors and Nanoelectronic Devices

    Science.gov (United States)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  12. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-02-10

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

  13. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    International Nuclear Information System (INIS)

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-01-01

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm −1 . At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10 7 and 46 cm 2  V −1  s −1 , respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm −1 and the on/off ratio is 4 × 10 5 . These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices

  14. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S., E-mail: msarnold@wisc.edu [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706 (United States)

    2014-02-24

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm{sup −1}. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10{sup 7} and 46 cm{sup 2} V{sup −1} s{sup −1}, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm{sup −1} and the on/off ratio is 4 × 10{sup 5}. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  15. Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

    International Nuclear Information System (INIS)

    Ryu, Hyeyeon; Kaelblein, Daniel; Ante, Frederik; Zschieschang, Ute; Kern, Klaus; Klauk, Hagen; Weitz, R Thomas; Schmidt, Oliver G

    2010-01-01

    Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are typically not utilized. However, integrated circuits often require not only transistors, but also resistive load devices. Here we show that many of the metallic carbon nanotubes that are deposited on the substrate along with the semiconducting nanotubes can be conveniently utilized as load resistors with favorable characteristics for the design of integrated circuits. We also demonstrate the fabrication of arrays of transistors and resistors, each based on an individual semiconducting or metallic carbon nanotube, and their integration on glass substrates into logic circuits with switching frequencies of up to 500 kHz using a custom-designed metal interconnect layer.

  16. Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes

    Directory of Open Access Journals (Sweden)

    Mohd Ambri Mohamed, Nobuhito Inami, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori and Akihiko Fujiwara

    2008-01-01

    Full Text Available We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.

  17. High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

    Science.gov (United States)

    Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

    2017-09-01

    As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

  18. High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

    Science.gov (United States)

    Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

    2017-09-01

    As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

  19. Carbon nanostructure-based field-effect transistors for label-free chemical/biological sensors.

    Science.gov (United States)

    Hu, PingAn; Zhang, Jia; Li, Le; Wang, Zhenlong; O'Neill, William; Estrela, Pedro

    2010-01-01

    Over the past decade, electrical detection of chemical and biological species using novel nanostructure-based devices has attracted significant attention for chemical, genomics, biomedical diagnostics, and drug discovery applications. The use of nanostructured devices in chemical/biological sensors in place of conventional sensing technologies has advantages of high sensitivity, low decreased energy consumption and potentially highly miniaturized integration. Owing to their particular structure, excellent electrical properties and high chemical stability, carbon nanotube and graphene based electrical devices have been widely developed for high performance label-free chemical/biological sensors. Here, we review the latest developments of carbon nanostructure-based transistor sensors in ultrasensitive detection of chemical/biological entities, such as poisonous gases, nucleic acids, proteins and cells.

  20. Nanopattern formation using localized plasma for growth of single-standing carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Javadi, Mohammad; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nanophysics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2017-01-15

    We report a novel method for formation of self-organized single-standing carbon nanotubes by customizing a plasma-based process. The growth of carbon nanotubes by plasma-enhanced chemical vapor deposition provides suitable grounds to utilize plasma–solid interactions for nanopatterning. The bulk plasma is utilized to fabricate carbon nanotubes on the prepatterned Ni catalyst which in turn can confine the plasma to the growth region. The plasma localization leads to a dielectrophoretic force exerted on Ni atoms and can be engineered in order to grow a specific pattern of self-organized single-standing carbon nanotubes. Numerical simulations based on the plasma localization and dielectrophoretic force confirmed the experimental results. This method provides a simple and cost-effective approach to obtain nanopatterned arrays of carbon nanotubes which can be used for fabrication of photonic and phononic crystals, self-gated field emission-based transistors and displays.

  1. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2011-01-01

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  2. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  3. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    Science.gov (United States)

    Demming, Anna

    2012-09-01

    Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

  4. Carbon Nanotube Flexible and Stretchable Electronics.

    Science.gov (United States)

    Cai, Le; Wang, Chuan

    2015-12-01

    The low-cost and large-area manufacturing of flexible and stretchable electronics using printing processes could radically change people's perspectives on electronics and substantially expand the spectrum of potential applications. Examples range from personalized wearable electronics to large-area smart wallpapers and from interactive bio-inspired robots to implantable health/medical apparatus. Owing to its one-dimensional structure and superior electrical property, carbon nanotube is one of the most promising material platforms for flexible and stretchable electronics. Here in this paper, we review the recent progress in this field. Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. Lastly, state-of-the-art advancement on printing process, which is ideal for large-scale fabrication of flexible and stretchable electronics, will also be reviewed in detail.

  5. Effects of potassium hydroxide post-treatments on the field-emission properties of thermal chemical vapor deposited carbon nanotubes.

    Science.gov (United States)

    Lee, Li-Ying; Lee, Shih-Fong; Chang, Yung-Ping; Hsiao, Wei-Shao

    2011-12-01

    In this study, a simple potassium hydroxide treatment was applied to functionalize the surface and to modify the structure of multi-walled carbon nanotubes grown on silicon substrates by thermal chemical vapor deposition. Scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive spectrometry were employed to investigate the mechanism causing the modified field-emission properties of carbon nanotubes. From our experimental data, the emitted currents of carbon nanotubes after potassium hydroxide treatment are enhanced by more than one order of magnitude compared with those of untreated carbon nanotubes. The emitted current density of carbon nanotubes increases from 0.44 mA/cm2 to 7.92 mA/cm2 after 30 minutes KOH treatment. This technique provides a simple, economical, and effective way to enhance the field-emission properties of carbon nanotubes.

  6. Electrophoretic deposition and field emission properties of patterned carbon nanotubes

    International Nuclear Information System (INIS)

    Zhao Haifeng; Song Hang; Li Zhiming; Yuan Guang; Jin Yixin

    2005-01-01

    Patterned carbon nanotubes on silicon substrates were obtained using electrophoretic method. The carbon nanotubes migrated towards the patterned silicon electrode in the electrophoresis suspension under the applied voltage. The carbon nanotubes arrays adhered well on the silicon substrates. The surface images of carbon nanotubes were observed by scanning electron microscopy. The field emission properties of the patterned carbon nanotubes were tested in a diode structure under a vacuum pressure below 5 x 10 -4 Pa. The measured emission area was about 1.0 mm 2 . The emission current density up to 30 mA/cm 2 at an electric field of 8 V/μm has been obtained. The deposition of patterned carbon nanotubes by electrophoresis is an alternative method to prepare field emission arrays

  7. Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region

    Science.gov (United States)

    Naderi, Ali; Ghodrati, Maryam

    2017-12-01

    In this paper, in order to improve the performance of a tunneling carbon nanotube field effect transistor (T-CNTFET) a new structure is proposed using multi-level impurity distribution along the drain region. The new T-CNTFET structure consists of six parts in the drain with stepwise doping distribution. The impurities on the drain side are n -type and the length of each region is 5nm. Electronic features of the proposed structure are simulated by the solution of Poisson and Schrödinger equations and the self-consistent method using Non-equilibrium Green's Function (NEGF). Simulation results show that the proposed structure reduces the band curvature near the drain-channel connection and widens the tunneling barrier. As a result, band-to-band tunneling and the OFF current are reduced and the ON/OFF current ratio increases in comparison with the conventional structure. In summary, by improving the subthreshold swing parameters, delay time, power delay product ( PDP and cut-off frequency compared to the conventional structure, the proposed structure can be considered as a proper candidate for digital applications with high speed and low power dissipation.

  8. Growth of nanotubes and chemical sensor applications

    Science.gov (United States)

    Hone, James; Kim, Philip; Huang, X. M. H.; Chandra, B.; Caldwell, R.; Small, J.; Hong, B. H.; Someya, T.; Huang, L.; O'Brien, S.; Nuckolls, Colin P.

    2004-12-01

    We have used a number of methods to grow long aligned single-walled carbon nanotubes. Geometries include individual long tubes, dense parallel arrays, and long freely suspended nanotubes. We have fabricated a variety of devices for applications such as multiprobe resistance measurement and high-current field effect transistors. In addition, we have measured conductance of single-walled semiconducting carbon nanotubes in field-effect transistor geometry and investigated the device response to water and alcoholic vapors. We observe significant changes in FET drain current when the device is exposed to various kinds of different solvent. These responses are reversible and reproducible over many cycles of vapor exposure. Our experiments demonstrate that carbon nanotube FETs are sensitive to a wide range of solvent vapors at concentrations in the ppm range.

  9. Microwave synthesis and characterisation of tin dioxide (SnO2) coated multi-walled carbon nanotubes

    CSIR Research Space (South Africa)

    Motshekga, S

    2010-09-01

    Full Text Available an attractive material for application in solar cells, field effect transistors, catalysis and gas-sensing1-3. Nanostructured composite materials of carbon nanotubes and metal oxides promise superior performance over conventional approaches due to the ability...

  10. The pH sensing characteristics of the extended-gate field-effect transistors of multi-walled carbon-nanotube thin film using low-temperature ultrasonic spray method.

    Science.gov (United States)

    Chien, Yun-Shan; Yang, Po-Yu; Tsai, Wan-Lin; Li, Yu-Ren; Chou, Chia-Hsin; Chou, Jung-Chuan; Cheng, Huang-Chung

    2012-07-01

    A novel, simple and low-temperature ultrasonic spray method was developed to fabricate the multi-walled carbon-nanotubes (MWCNTs) based extended-gate field-effect transistors (EGFETs) as the pH sensor. With an acid-treated process, the chemically functionalized two-dimensional MWCNT network could provide plenty of functional groups which exhibit hydrophilic property and serve as hydrogen sensing sites. For the first time, the EGFET using a MWCNT structure could achieve a wide sensing rage from pH = 1 to pH = 13. Furthermore, the pH sensitivity and linearity values of the CNT pH-EGFET devices were enhanced to 51.74 mV/pH and 0.9948 from pH = 1 to pH = 13 while the sprayed deposition reached 50 times. The sensing properties of hydrogen and hydroxyl ions show significantly dependent on the sprayed deposition times, morphologies, crystalline and chemical bonding of acid-treated MWCNT. These results demonstrate that the MWCNT-EGFETs are very promising for the applications in the pH and biomedical sensors.

  11. Single-walled carbon nanotube networks for flexible and printed electronics

    International Nuclear Information System (INIS)

    Zaumseil, Jana

    2015-01-01

    Networks of single-walled carbon nanotubes (SWNTs) can be processed from solution and have excellent mechanical properties. They are highly flexible and stretchable. Depending on the type of nanotubes (semiconducting or metallic) they can be used as replacements for metal or transparent conductive oxide electrodes or as semiconducting layers for field-effect transistors (FETs) with high carrier mobilities. They are thus competitive alternatives to other solution-processable materials for flexible and printed electronics. This review introduces the basic properties of SWNTs, current methods for dispersion and separation of metallic and semiconducting SWNTs and techniques to deposit and pattern dense networks from dispersion. Recent examples of applications of carbon nanotubes as conductors and semiconductors in (opto-)electronic devices and integrated circuits will be discussed. (paper)

  12. Bioelectronic Nose Using Odorant Binding Protein-Derived Peptide and Carbon Nanotube Field-Effect Transistor for the Assessment of Salmonella Contamination in Food.

    Science.gov (United States)

    Son, Manki; Kim, Daesan; Kang, Jinkyung; Lim, Jong Hyun; Lee, Seung Hwan; Ko, Hwi Jin; Hong, Seunghun; Park, Tai Hyun

    2016-12-06

    Salmonella infection is the one of the major causes of food borne illnesses including fever, abdominal pain, diarrhea, and nausea. Thus, early detection of Salmonella contamination is important for our healthy life. Conventional detection methods for the food contamination have limitations in sensitivity and rapidity; thus, the early detection has been difficult. Herein, we developed a bioelectronic nose using a carbon nanotube (CNT) field-effect transistor (FET) functionalized with Drosophila odorant binding protein (OBP)-derived peptide for easy and rapid detection of Salmonella contamination in ham. 3-Methyl-1-butanol is known as a specific volatile organic compound, generated from the ham contaminated with Salmonella. We designed and synthesized the peptide based on the sequence of the Drosophila OBP, LUSH, which specifically binds to alcohols. The C-terminus of the synthetic peptide was modified with three phenylalanine residues and directly immobilized onto CNT channels using the π-π interaction. The p-type properties of FET were clearly maintained after the functionalization using the peptide. The biosensor detected 1 fM of 3-methyl-1-butanol with high selectivity and successfully assessed Salmonella contamination in ham. These results indicate that the bioelectronic nose can be used for the rapid detection of Salmonella contamination in food.

  13. On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication

    Science.gov (United States)

    Jang, Ho-Kyun; Choi, Jun Hee; Kim, Do-Hyun; Kim, Gyu Tae

    2018-06-01

    Single-walled carbon nanotube (SWCNT) is generally used as a networked structure in the fabrication of a field-effect transistor (FET) since it is known that one-third of SWCNT is electrically metallic and the remains are semiconducting. In this case, the presence of metallic paths by metallic SWCNT (m-SWCNT) becomes a significant technical barrier which hinders the networks from achieving a semiconducting behavior, resulting in a low on/off ratio. Here, we report on an easy method of controlling the on/off ratio of a FET where semiconducting SWCNT (s-SWCNT) and m-SWCNT constitute networks between source and drain electrodes. A FET with SWCNT networks was simply sonicated under water to control the on/off ratio and network density. As a result, the FET having an almost metallic behavior due to the metallic paths by m-SWCNT exhibited a p-type semiconducting behavior. The on/off ratio ranged from 1 to 9.0 × 104 along sonication time. In addition, theoretical calculations based on Monte-Carlo method and circuit simulation were performed to understand and explain the phenomenon of a change in the on/off ratio and network density by sonication. On the basis of experimental and theoretical results, we found that metallic paths contributed to a high off-state current which leads to a low on/off ratio and that sonication formed sparse SWCNT networks where metallic paths of m-SWCNT were removed, resulting in a high on/off ratio. This method can open a chance to save the device which has been considered as a failed one due to a metallic behavior by a high network density leading to a low on/off ratio.

  14. Field emission properties of the graphenated carbon nanotube electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, H., E-mail: hudson.zanin@bristol.ac.uk [School of Chemistry, University of Bristol, Bristol BS8 1TS (United Kingdom); Faculdade de Engenharia Elétrica e Computação, Departamento de Semicondutores, Instrumentos e Fotônica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N. 400, CEP 13 083-852 Campinas, São Paulo (Brazil); Ceragioli, H.J.; Peterlevitz, A.C.; Baranauskas, Vitor [Faculdade de Engenharia Elétrica e Computação, Departamento de Semicondutores, Instrumentos e Fotônica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N. 400, CEP 13 083-852 Campinas, São Paulo (Brazil); Marciano, F.R.; Lobo, A.O. [Laboratory of Biomedical Nanotechnology/Institute of Research and Development at UNIVAP, Av. Shishima Hifumi, 2911, CEP 12244-000 Sao Jose dos Campos, SP (Brazil)

    2015-01-01

    Graphical abstract: - Highlights: • Facile method to prepare graphenated carbon nanotubes (g-CNTs). • The electric field emission behaviour of g-CNTs was studied. • g-CNTs show better emission current stability than non-graphenated CNTs. - Abstract: Reduced graphene oxide-coated carbon nanotubes (RGO-CNT) electrodes have been prepared by hot filament chemical vapour deposition system in one-step growth process. We studied RGO-CNT electrodes behaviour as cold cathode in field emission test. Our results show that RGO-CNT retain the low threshold voltage typical of CNTs, but with greatly improved emission current stability. The field emission enhancement value is significantly higher than that expected being caused by geometric effect (height divided by the radius of nanotube). This suggested that the field emission of this hybrid structure is not only from a single tip, but eventually it is from several tips with contribution of graphene nanosheets at CNT's walls. This phenomenon explains why the graphenated carbon nanotubes do not burn out as quickly as CNT does until emission ceases completely. These preliminaries results make nanocarbon materials good candidates for applications as electron sources for several devices.

  15. Radiation Effects in Carbon Nanoelectronics

    Directory of Open Access Journals (Sweden)

    Cory D. Cress

    2012-07-01

    Full Text Available We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.

  16. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    Science.gov (United States)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

  17. Femtomolar detection of 2,4-dichlorophenoxyacetic acid herbicides via competitive immunoassays using microfluidic based carbon nanotube liquid gated transistor.

    Science.gov (United States)

    Wijaya, I Putu Mahendra; Nie, Tey Ju; Gandhi, Sonu; Boro, Robin; Palaniappan, Alagappan; Hau, Goh Wei; Rodriguez, Isabel; Suri, C Raman; Mhaisalkar, Subodh G

    2010-03-07

    Monitoring of environmental pollutants has become increasingly important due to concern over potential health and environmental impact inflicted by these chemicals. In this contribution, we focus on the development of an all-plastic biosensor comprising laminated single-walled carbon nanotubes as the active element and its conductance modulation in a liquid-gated field effect transistor, as the principle of transduction, for the detection of 2,4-dicholorophenoxy acetic acid (2,4-D) herbicide. The reported biosensor is capable of performing real-time label-free detection of analytes in liquid environment. This biosensor which relies on immunoassay principle for specificity is able to detect down to 500 fM levels of 2,4-D in soil samples.

  18. Analytical modeling of glucose biosensors based on carbon nanotubes.

    Science.gov (United States)

    Pourasl, Ali H; Ahmadi, Mohammad Taghi; Rahmani, Meisam; Chin, Huei Chaeng; Lim, Cheng Siong; Ismail, Razali; Tan, Michael Loong Peng

    2014-01-15

    In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, their enhanced electron transfer properties, and their high thermal conductivity, carbon nanotubes can be used effectively as electrochemical sensors. The integration of carbon nanotubes with a functional group provides a good and solid support for the immobilization of enzymes. The determination of glucose levels using biosensors, particularly in the medical diagnostics and food industries, is gaining mass appeal. Glucose biosensors detect the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. This action provides high accuracy and a quick detection rate. In this paper, a single-wall carbon nanotube field-effect transistor biosensor for glucose detection is analytically modeled. In the proposed model, the glucose concentration is presented as a function of gate voltage. Subsequently, the proposed model is compared with existing experimental data. A good consensus between the model and the experimental data is reported. The simulated data demonstrate that the analytical model can be employed with an electrochemical glucose sensor to predict the behavior of the sensing mechanism in biosensors.

  19. On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

    Science.gov (United States)

    Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

    2017-11-28

    Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

  20. Solution-processed single-wall carbon nanotube transistor arrays for wearable display backplanes

    Directory of Open Access Journals (Sweden)

    Byeong-Cheol Kang

    2018-01-01

    Full Text Available In this paper, we demonstrate solution-processed single-wall carbon nanotube thin-film transistor (SWCNT-TFT arrays with polymeric gate dielectrics on the polymeric substrates for wearable display backplanes, which can be directly attached to the human body. The optimized SWCNT-TFTs without any buffer layer on flexible substrates exhibit a linear field-effect mobility of 1.5cm2/V-s and a threshold voltage of around 0V. The statistical plot of the key device metrics extracted from 35 SWCNT-TFTs which were fabricated in different batches at different times conclusively support that we successfully demonstrated high-performance solution-processed SWCNT-TFT arrays which demand excellent uniformity in the device performance. We also investigate the operational stability of wearable SWCNT-TFT arrays against an applied strain of up to 40%, which is the essential for a harsh degree of strain on human body. We believe that the demonstration of flexible SWCNT-TFT arrays which were fabricated by all solution-process except the deposition of metal electrodes at process temperature below 130oC can open up new routes for wearable display backplanes.

  1. On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Emelianov, A. V., E-mail: emmsowton@gmail.com; Romashkin, A. V.; Tsarik, K. A. [National Research University of Electronic Technology (MIET) (Russian Federation); Nasibulin, A. G. [Skolkovo Institute of Science and Technology (Russian Federation); Nevolin, V. K.; Bobrinetskiy, I. I. [National Research University of Electronic Technology (MIET) (Russian Federation)

    2017-04-15

    This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga{sup +} ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm{sup 2}/(V s) at an on/off current ratio of 5 × 10{sup 2}.

  2. Electric field effect in the growth of carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, E., E-mail: ericvpp@gmail.com; Briceño-Fuenmayor, H. [Instituto Venezolano de Investigaciones Científicas (IVIC), Laboratorio de Física de Fluidos y Plasma (Venezuela, Bolivarian Republic of); Arévalo, J. [Instituto Zuliano de Investigaciones Tecnológicas (INZIT), Unidad de Caracterización y Estructura de Materiales (Venezuela, Bolivarian Republic of); Atencio, R. [Instituto Venezolano de Investigaciones Científicas (IVIC), Centro de Investigación y Tecnología de Materiales (Venezuela, Bolivarian Republic of); Corredor, L. [Instituto Zuliano de Investigaciones Tecnológicas (INZIT), Unidad de Caracterización y Estructura de Materiales (Venezuela, Bolivarian Republic of)

    2015-06-15

    The growth of carbon nanotubes (CNTs) under a controlled electric field in a chemical vapor deposition system is investigated. We evaluate the influence of this external field on the morphological and structural characteristics of CNTs. Scanning electron microscopy results display a large presence of carbonaceous material in the positive plate, which appear to be a consequence of the attraction of electric forces over the electronically unbalanced cracked carbon molecules in the heating zone. We also observe a growth behavior for CNTs, in which catalyst particles are localized either at the bottom or the upper part of the nanotube, depending on the intensity and direction of the electric field. A Raman analysis from all obtained carbon materials shows the presence of two peaks, corresponding to the D ∼ 1340 cm{sup −1} and G ∼ 1590 cm{sup −1} bands attributed to multiwall CNTs. The average diameter of the CNTs is in the range between 90 and 40 nm. These results provide experimental evidence for the dependence of the catalyst and subtract interaction on the growing mechanism, in which weak chemical or electronic interactions could stimulate a top-growing as the strongest base-growing process.

  3. Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

    Science.gov (United States)

    Cao, Qing; Han, Shu-Jen; Tulevski, George S.

    2014-09-01

    One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

  4. Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors.

    Science.gov (United States)

    Andrews, Joseph B; Mondal, Kunal; Neumann, Taylor V; Cardenas, Jorge A; Wang, Justin; Parekh, Dishit P; Lin, Yiliang; Ballentine, Peter; Dickey, Michael D; Franklin, Aaron D

    2018-05-14

    Flexible and stretchable electronics are poised to enable many applications that cannot be realized with traditional, rigid devices. One of the most promising options for low-cost stretchable transistors are printed carbon nanotubes (CNTs). However, a major limiting factor in stretchable CNT devices is the lack of a stable and versatile contact material that forms both the interconnects and contact electrodes. In this work, we introduce the use of eutectic gallium-indium (EGaIn) liquid metal for electrical contacts to printed CNT channels. We analyze thin-film transistors (TFTs) fabricated using two different liquid metal deposition techniques-vacuum-filling polydimethylsiloxane (PDMS) microchannel structures and direct-writing liquid metals on the CNTs. The highest performing CNT-TFT was realized using vacuum-filled microchannel deposition with an in situ annealing temperature of 150 °C. This device exhibited an on/off ratio of more than 10 4 and on-currents as high as 150 μA/mm-metrics that are on par with other printed CNT-TFTs. Additionally, we observed that at room temperature the contact resistances of the vacuum-filled microchannel structures were 50% lower than those of the direct-write structures, likely due to the poor adhesion between the materials observed during the direct-writing process. The insights gained in this study show that stretchable electronics can be realized using low-cost and solely solution processing techniques. Furthermore, we demonstrate methods that can be used to electrically characterize semiconducting materials as transistors without requiring elevated temperatures or cleanroom processes.

  5. Increased field-emission site density from regrown carbon nanotube films

    International Nuclear Information System (INIS)

    Wang, Y.Y.; Gupta, S.; Liang, M.; Nemanich, R.J.

    2005-01-01

    Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density (∼20 μA/cm 2 at 1 V/μm), while the regrown sample exhibited a significantly increased emission site density

  6. Field emission response from multi-walled carbon nanotubes grown on electrochemically engineered copper foil

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Amit Kumar; Jain, Vaibhav [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Saini, Krishna [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Lahiri, Indranil, E-mail: indrafmt@iitr.ac.in [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India)

    2017-02-01

    Exciting properties of carbon nanotube has proven it to be a promising candidate for field emission applications, if its processing cost can be reduced effectively. In this research, a new electrochemical technique is proposed for growing carbon nanotubes in selective areas by thermal chemical vapour deposition. In this process, electrochemical processing is used to create localized pits and deposition of catalysts, which act as roots to support growth and alignment of the CNTs on copper substrate. CNTs grown thus were characterized and studied using scanning electron microscope, transmission electron microscope and Raman spectroscopy, elucidating presence of multiwall carbon nanotubes (MWCNT). These CNT emitters have comparatively lower turn-on field and higher field enhancement factor. - Highlights: • Electrochemical pitting for localized carbon nanotube growth is proposed. • Electrochemical pitting method shows patterning effect on the substrate. • Size and density of pits depend on voltage, pH and temperature. • CNTs thus grown shows good field emission response.

  7. Variable electron beam diameter achieved by a titanium oxide/carbon nanotube hetero-structure suitable for nanolithography

    International Nuclear Information System (INIS)

    Abdi, Yaser; Barati, Fatemeh

    2013-01-01

    We report the fabrication of a titanium oxide/carbon nanotube based field emission device suitable for nanolithography and fabrication of transistors. The growth of carbon nanotubes (CNTs) is performed on silicon substrates using a plasma-enhanced chemical vapor deposition method. The vertically grown CNTs are encapsulated by titanium oxide (TiO 2 ) using an atmospheric pressure chemical vapor deposition system. Field emission from the CNTs is realized by mechanical polishing of the prepared structure. Possible applications of such nanostructures as a lithography tool with variable electron beam diameter has been investigated. The obtained results show that a spot size of less than 30 nm can be obtained by applying the proper voltage on TiO 2 surrounding gate. Electrical measurements of the fabricated device confirm the capability of the structure for fabrication of field emission based field effect transistors. By a voltage applied between the gate and the cathode electrode, the emission current from CNTs shows a significant drop, indicating proper control of the gate on the emission current. (paper)

  8. Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors.

    Science.gov (United States)

    Cao, Xuan; Lau, Christian; Liu, Yihang; Wu, Fanqi; Gui, Hui; Liu, Qingzhou; Ma, Yuqiang; Wan, Haochuan; Amer, Moh R; Zhou, Chongwu

    2016-11-22

    Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed electronics due to their advantageous electrical and mechanical properties, intrinsic printability in solution, and desirable stability in air. However, fully printed, large-area, high-performance, and flexible carbon nanotube active-matrix backplanes are still difficult to realize for future displays and sensing applications. Here, we report fully screen-printed active-matrix electrochromic displays employing carbon nanotube thin-film transistors. Our fully printed backplane shows high electrical performance with mobility of 3.92 ± 1.08 cm 2 V -1 s -1 , on-off current ratio I on /I off ∼ 10 4 , and good uniformity. The printed backplane was then monolithically integrated with an array of printed electrochromic pixels, resulting in an entirely screen-printed active-matrix electrochromic display (AMECD) with good switching characteristics, facile manufacturing, and long-term stability. Overall, our fully screen-printed AMECD is promising for the mass production of large-area and low-cost flexible displays for applications such as disposable tags, medical electronics, and smart home appliances.

  9. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    KAUST Repository

    Hanna, Amir

    2016-11-01

    This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

  10. Controlling the diameters and field emission properties of vertically aligned carbon nanotubes synthesized by thermal chemical vapor deposition

    International Nuclear Information System (INIS)

    Choi, Sung Yool; Kang, Young Il; Cho, Kyoung Ik; Choi, Kyu Seok; Kim, Do Jin

    2001-01-01

    We report here the synthesis of vertically well-aligned carbon nanotubes and the effect of catalytic metal layer on the diameter of grown carbon nanotubes and the field emission characteristics of them, The carbon nanotubes were grown by thermal chemical vapor deposition at temperatures below 900 .deg. C on Fe metal catalytic layer, deposited by sputtering process on a Si substrate and pretreated by heat and NH 3 gas. We found that the thickness of metal layers could be an important parameter in controlling the diameters of carbon nanotubes. With varying the thickness of the metal layers the grain sizes of them also vary so that the diameters of the nanotubes could be controlled. Field emission measurement has been made on the carbon nanotube field emitters at room temperature in a vacuum chamber below 10 -6 Torr. Our vertically aligned carbon nanotube field emitter of the smallest diameter emits a current density about 10 mA/cm 2 at 7.2 V/μm. The field emission property of the carbon nanotubes shows strong dependence on the nanotube diameters as expected

  11. DNA-FET using carbon nanotube electrodes

    International Nuclear Information System (INIS)

    Sasaki, T K; Ikegami, A; Aoki, N; Ochiai, Y

    2006-01-01

    We demonstrate DNA field effect transistor (DNA-FET) using multiwalled carbon nanotube (MWNT) as nano-structural source and drain electrodes. The MWNT electrodes have been fabricated by focused ion-beam bombardment (FIBB). A very short channel, approximately 50 nm, was easily formed between the severed MWNT. The current-voltage (I-V) characteristics of DNA molecules between the MWNT electrodes showed hopping transport property. We have also measured the gate-voltage dependence in the I-V characteristics and found that poly DNA molecules exhibits p-type conduction. The transport of DNA-FET can be explained by two hopping lengths which depend on the range of the source-drain bias voltages

  12. Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

    Science.gov (United States)

    Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

    2017-08-01

    The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

    KAUST Repository

    Hellstrom, Sondra L.

    2010-07-12

    We report patterned deposition of carbon nanotube/conjugated polymer composites from solution with high nanotube densities and excellent feature resolution. Such composites are suited for use as electrodes in high-performance transistors of pentacene and C60, with bottom-contact mobilities of ?0.5 and ?1 cm2 V-1 s-1, respectively. This represents a clear step towards development of inexpensive, high-performance all-organic circuits. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    Science.gov (United States)

    Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

    2014-12-01

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

  15. Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

    Science.gov (United States)

    Liu, Jie (Inventor); Du, Chunsheng (Inventor); Qian, Cheng (Inventor); Gao, Bo (Inventor); Qiu, Qi (Inventor); Zhou, Otto Z. (Inventor)

    2009-01-01

    Carbon nanotube material having an outer diameter less than 10 nm and a number of walls less than ten are disclosed. Also disclosed are an electron field emission device including a substrate, an optionally layer of adhesion-promoting layer, and a layer of electron field emission material. The electron field emission material includes a carbon nanotube having a number of concentric graphene shells per tube of from two to ten, an outer diameter from 2 to 8 nm, and a nanotube length greater than 0.1 microns. One method to fabricate carbon nanotubes includes the steps of (a) producing a catalyst containing Fe and Mo supported on MgO powder, (b) using a mixture of hydrogen and carbon containing gas as precursors, and (c) heating the catalyst to a temperature above 950.degree. C. to produce a carbon nanotube. Another method of fabricating an electron field emission cathode includes the steps of (a) synthesizing electron field emission materials containing carbon nanotubes with a number of concentric graphene shells per tube from two to ten, an outer diameter of from 2 to 8 nm, and a length greater than 0.1 microns, (b) dispersing the electron field emission material in a suitable solvent, (c) depositing the electron field emission materials onto a substrate, and (d) annealing the substrate.

  16. 3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

    KAUST Repository

    Fahad, Hossain M.

    2014-03-01

    scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

  17. Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

    Science.gov (United States)

    Angelucci, Renato; Rizzoli, Rita; Vinciguerra, Vincenzo; Fortuna Bevilacqua, Maria; Guerri, Sergio; Corticelli, Franco; Passini, Mara

    2007-03-01

    In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.

  18. Control of Pre-treatment for Carbon Nanotube Synthesis Using Proton Ion Beam Irradiation

    International Nuclear Information System (INIS)

    Kim, Y. H.; Kim, D. W.; Lee, S. M.; Kim, W. J.

    2008-04-01

    The carbon nanotubes are the next generation material in fuel storage system, the gas sensor, the life science sensor or the nano-size transistor, the stiffener and the heat dissipation field. For use at appropriate position in various field, it must be developed that control technique makes carbon nanotubes with high performance synthesized at appropriate location. The density of the carbon nanotube is 1 - 2g/cm3 with aluminum (2 - 3g/cm3) to be light, the elastic modulus is the level where as many of as 30 - 50 times of iron's elastic modulus and thermal conductivity is similar to the diamond, electric conductivity is high as well above the metal. Generally, many researchers have tried to synthesize the carbon nanotubes of mm length unit using the hydrogen and porous substrate, which play a role of more activating the catalyst. The proton beam which consist of H+ was able to directly inject the hydrogen into target materials such as Ni, Co, Fe as well as transfer high activation energy to them. so we were able to carry out feasibility of controlling the porosity of thin film and substrate to synthesize carbon nanotubes. The pre-treatment method of existing which is used generally heat treatment and the ammonia controls has generated island of catalyst which has increased the surface to react the hydrocarbon. However, pre-treatment method of existing caused the random nuclear creation so it was hard to control the island size of catalyst. It was not enough to understand the porous effect against synthesis of carbon nanotubes deduced from altering various substrates. In this report, it is possible investigate how hydrogen and the porous effect influence on growth of carbon nanotubes through controlling the nuclear creation of catalysts directly and the porosity of them using proton beam

  19. Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

    International Nuclear Information System (INIS)

    Luo Yu-Pin; Tien Li-Gan; Tsai Chuen-Horng; Lee Ming-Hsien; Li Feng-Yin

    2011-01-01

    Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. A fabrication method for field emitter array of carbon nanotubes with improved carbon nanotube rooting

    Energy Technology Data Exchange (ETDEWEB)

    Chouhan, V., E-mail: vchouhan@post.kek.jp [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); Noguchi, T. [High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Kato, S. [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan)

    2015-11-30

    We have developed a technique for fabrication of a field emitter array (FEA) of carbon nanotubes (CNTs) to obtain a high emission current along with a high current density. The FEA was prepared with many small equidistant circular emitters of randomly oriented multiwall carbon nanotubes. The fabrication of a FEA substrate followed with deposition of titanium nitride (TiN) film on a tantalum (Ta) substrate and circular titanium (Ti) islands on the TiN coated Ta substrate in a DC magnetron sputtering coater. CNTs were dispersed on the substrate and rooted into the circular Ti islands at a high temperature to prepare an array of circular emitters of CNTs. The TiN film was applied on a Ta substrate to make a reaction barrier between the Ta substrate and CNTs in order to root CNTs only into the Ti islands without a reaction with the Ta substrate at the high temperature. A high emission current of 31.7 mA with an effective current density of 34.5 A/cm{sup 2} was drawn at 6.5 V/μm from a FEA having 130 circular emitters in a diameter of 50 μm and with a pitch of 200 μm. The high emission current was ascribed to the good quality rooting of CNTs into the Ti islands and an edge effect, in which a high emission current was expected from the peripheries of the circular emitters. - Highlights: • We developed a method to fabricate a field emitter array of carbon nanotubes (CNTs). • CNT rooting into array of titanium islands was improved at a high temperature. • Titanium nitride film was used to stop reaction between CNT and tantalum substrate. • Strong edge effect was achieved from an array of small circular emitters of CNTs. • The good quality CNT rooting and the edge effect enhanced an emission current.

  1. Simulation of a spiking neuron circuit using carbon nanotube transistors

    Energy Technology Data Exchange (ETDEWEB)

    Najari, Montassar, E-mail: malnjar@jazanu.edu.sa [Departement of Physics, Faculty of Sciences, University of Gabes, Gabes (Tunisia); IKCE unit, Jazan University, Jazan (Saudi Arabia); El-Grour, Tarek, E-mail: grour-tarek@hotmail.fr [Departement of Physics, Faculty of Sciences, University of Gabes, Gabes (Tunisia); Jelliti, Sami, E-mail: sjelliti@jazanu.edu.sa [IKCE unit, Jazan University, Jazan (Saudi Arabia); Hakami, Othman Mousa, E-mail: omhakami@jazanu.edu.sa [IKCE unit, Jazan University, Jazan (Saudi Arabia); Faculty of Sciences, Jazan University, Jazan (Saudi Arabia)

    2016-06-10

    Neuromorphic engineering is related to the existing analogies between the physical semiconductor VLSI (Very Large Scale Integration) and biophysics. Neuromorphic systems propose to reproduce the structure and function of biological neural systems for transferring their calculation capacity on silicon. Since the innovative research of Carver Mead, the neuromorphic engineering continues to emerge remarkable implementation of biological system. This work presents a simulation of an elementary neuron cell with a carbon nanotube transistor (CNTFET) based technology. The model of the cell neuron which was simulated is called integrate and fire (I&F) model firstly introduced by G. Indiveri in 2009. This circuit has been simulated with CNTFET technology using ADS environment to verify the neuromorphic activities in terms of membrane potential. This work has demonstrated the efficiency of this emergent device; i.e CNTFET on the design of such architecture in terms of power consumption and technology integration density.

  2. Simulation of a spiking neuron circuit using carbon nanotube transistors

    International Nuclear Information System (INIS)

    Najari, Montassar; El-Grour, Tarek; Jelliti, Sami; Hakami, Othman Mousa

    2016-01-01

    Neuromorphic engineering is related to the existing analogies between the physical semiconductor VLSI (Very Large Scale Integration) and biophysics. Neuromorphic systems propose to reproduce the structure and function of biological neural systems for transferring their calculation capacity on silicon. Since the innovative research of Carver Mead, the neuromorphic engineering continues to emerge remarkable implementation of biological system. This work presents a simulation of an elementary neuron cell with a carbon nanotube transistor (CNTFET) based technology. The model of the cell neuron which was simulated is called integrate and fire (I&F) model firstly introduced by G. Indiveri in 2009. This circuit has been simulated with CNTFET technology using ADS environment to verify the neuromorphic activities in terms of membrane potential. This work has demonstrated the efficiency of this emergent device; i.e CNTFET on the design of such architecture in terms of power consumption and technology integration density.

  3. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    International Nuclear Information System (INIS)

    Coppedè, Nicola; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Valitova, Irina; Cicoira, Fabio; Mahvash, Farzaneh; Santato, Clara; Martel, Richard

    2014-01-01

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs. (paper)

  4. Nanotubes on Display: How Carbon Nanotubes Can Be Integrated into Electronic Displays

    KAUST Repository

    Opatkiewicz, Justin

    2010-06-22

    Random networks of single-walled carbon nanotubes show promise for use in the field of flexible electronics. Nanotube networks have been difficult to utilize because of the mixture of electronic types synthesized when grown. A variety of separation techniques have been developed, but few can readily be scaled up. Despite this issue, when metallic percolation pathways can be separated out or etched away, these networks serve as high-quality thinfilm transistors with impressive device characteristics. A new article in this issue illustrates this point and the promise of these materials. With more work, these devices can be implemented in transparent displays in the next generation of hand-held electronics. © 2010 American Chemical Society.

  5. Carbon nanotubes-based chemiresistive immunosensor for small molecules: detection of nitroaromatic explosives.

    Science.gov (United States)

    Park, Miso; Cella, Lakshmi N; Chen, Wilfred; Myung, Nosang V; Mulchandani, Ashok

    2010-12-15

    In recent years, there has been a growing focus on use of one-dimensional (1-D) nanostructures, such as carbon nanotubes and nanowires, as transducer elements for label-free chemiresistive/field-effect transistor biosensors as they provide label-free and high sensitivity detection. While research to-date has elucidated the power of carbon nanotubes- and other 1-D nanostructure-based field effect transistors immunosensors for large charged macromolecules such as proteins and viruses, their application to small uncharged or charged molecules has not been demonstrated. In this paper we report a single-walled carbon nanotubes (SWNTs)-based chemiresistive immunosensor for label-free, rapid, sensitive and selective detection of 2,4,6-trinitrotoluene (TNT), a small molecule. The newly developed immunosensor employed a displacement mode/format in which SWNTs network forming conduction channel of the sensor was first modified with trinitrophenyl (TNP), an analog of TNT, and then ligated with the anti-TNP single chain antibody. Upon exposure to TNT or its derivatives the bound antibodies were displaced producing a large change, several folds higher than the noise, in the resistance/conductance of SWNTs giving excellent limit of detection, sensitivity and selectivity. The sensor detected between 0.5 ppb and 5000 ppb TNT with good selectivity to other nitroaromatic explosives and demonstrated good accuracy for monitoring TNT in untreated environmental water matrix. We believe this new displacement format can be easily generalized to other one-dimensional nanostructure-based chemiresistive immuno/affinity-sensors for detecting small and/or uncharged molecules of interest in environmental monitoring and health care. Copyright © 2010 Elsevier B.V. All rights reserved.

  6. Electronic and optical properties of finite carbon nanotubes in an electric field

    International Nuclear Information System (INIS)

    Chen, R B; Lee, C H; Chang, C P; Lin, M F

    2007-01-01

    The effects, caused by the geometric structure and an electric field (E), on the electronic and optical properties of quasi-zero-dimensional finite carbon nanotubes are explored by employing the tight-binding model coupled with curvature effects. Electronic properties (state energies, symmetry of electronic states, energy spacing and state degeneracy) are significantly affected by the magnitude and the direction of the electric field and the geometric structure (radius, length and chirality). The electric field, by lowering the symmetry of finite carbon nanotubes, modifies the electronic properties. Thus, the optical excitation spectra, excited by electric polarization parallel to the nanotube axis, exhibit rich delta-function-like peaks, which reveal the characteristics of the electronic properties. Therefore it follows that geometric structure and E influence the low-energy absorption spectra, i.e. the change of frequency of the first peak, the alternation of the peak height and the production of the new peaks. There are more absorption peaks when E is oriented closer to the cross-section plane. Moreover, the very complicated optical absorption spectra are characteristic for the individual chiral carbon nanotube due to its specific geometric structure. Above all, the predicted absorption spectra and the associated electronic properties could be verified by optical measurements

  7. A carbon nanotube immunosensor for Salmonella

    Science.gov (United States)

    Lerner, Mitchell B.; Goldsmith, Brett R.; McMillon, Ronald; Dailey, Jennifer; Pillai, Shreekumar; Singh, Shree R.; Johnson, A. T. Charlie

    2011-12-01

    Antibody-functionalized carbon nanotube devices have been suggested for use as bacterial detectors for monitoring of food purity in transit from the farm to the kitchen. Here we report progress towards that goal by demonstrating specific detection of Salmonella in complex nutrient broth solutions using nanotube transistors functionalized with covalently-bound anti-Salmonella antibodies. The small size of the active device region makes them compatible with integration in large-scale arrays. We find that the on-state current of the transistor is sensitive specifically to the Salmonella concentration and saturates at low concentration (Salmonella and other bacteria types, with no sign of saturation even at much larger concentrations (108 cfu/ml).

  8. Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

    International Nuclear Information System (INIS)

    Chin, S.-C.; Chang, Y.-C.; Chang, C.-S.; Tsong, T T; Hsu, Chen-Chih; Wu, Chih-I; Lin, W-H; Woon, W-Y; Lin, L-T; Tao, H-J

    2008-01-01

    A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors

  9. Examination of the high-frequency capability of carbon nanotube FETs

    Science.gov (United States)

    Pulfrey, David L.; Chen, Li

    2008-09-01

    New results are added to a recent critique of the high-frequency performance of carbon nanotube field-effect transistors (CNFETs). On the practical side, reduction of the number of metallic tubes in CNFETs fashioned from multiple nanotubes has allowed the measured fT to be increased to 30 GHz. On the theoretical side, the opinion that the band-structure-determined velocity limits the high-frequency performance has been reinforced by corrections to recent simulation results for doped-contact CNFETs, and by the ruling out of the possibility of favourable image-charge effects. Inclusion in the simulations of the features of finite gate-metal thickness and source/drain contact resistance has given an indication of likely practical values for fT. A meaningful comparison between CNFETs with doped-contacts and metallic contacts has been made.

  10. The effects of carbon nanotubes on CPU cooling

    Science.gov (United States)

    Challa, Sashi Kiran

    Computers today have evolved from being big bulky machines that took up rooms of space into small simple machines for net browsing and into small but complicated multi-core servers and supercomputing architectures. This has been possible due to the evolution of the processors. Today processors have reached 45nm specifications with millions of transistors. Transistors produce heat when they run. Today more than ever we have a growing need for managing this heat efficiently. It is indicated that increasing power density can cause a difficulty in managing temperatures on a chip. It is also mentioned that we need to move to a more temperature aware architecture. In this research we try and address the issue of handling the heat produced by processors in an efficient manner. We have tried to see if the use of carbon nanotubes will prove useful in dissipating the heat produced by the processor in a more efficient way. In the process we have also tried to come up with a repeatable experimental setup as there is not work that we have been able to find describing this exact procedure. The use of carbon nanotubes seemed natural as they have a very high thermal conductivity value. Also one of the uncertain aspects of the experiment is the use of carbon nanotubes as they are still under study and their properties have not been completely understood and there has been some inconsistency in the theoretical values of their properties and the experimental results obtained so far. The results that we got were not exactly what we expected but were close, and were in the right direction indicating that more work in future would show better and consistent results.

  11. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  12. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  13. High speed capacitor-inverter based carbon nanotube full adder.

    Science.gov (United States)

    Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

    2010-03-18

    Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

  14. Modifying the electronic and optical properties of carbon nanotubes

    Science.gov (United States)

    Kinder, Jesse M.

    The intrinsic electronic and optical properties of carbon nanotubes make them promising candidates for circuit elements and LEDs in nanoscale devices. However, applied fields and interactions with the environment can modify these intrinsic properties. This dissertation is a theoretical study of perturbations to an ideal carbon nanotube. It illustrates how transport and optical properties of carbon nanotubes can be adversely affected or intentionally modified by the local environment. The dissertation is divided into three parts. Part I analyzes the effect of a transverse electric field on the single-electron energy spectrum of semiconducting carbon nanotubes. Part II analyzes the effect of the local environment on selection rules and decay pathways relevant to dark excitons. Part III is a series of 26 appendices. Two different models for a transverse electric field are introduced in Part I. The first is a uniform field perpendicular to the nanotube axis. This model suggests the field has little effect on the band gap until it exceeds a critical value that can be tuned with strain or a magnetic field. The second model is a transverse field localized to a small region along the nanotube axis. The field creates a pair of exponentially localized bound states but has no effect on the band gap for particle transport. Part II explores the physics of dark excitons in carbon nanotubes. Two model calculations illustrate the effect of the local environment on allowed optical transitions and nonradiative recombination pathways. The first model illustrates the role of inversion symmetry in the optical spectrum. Broken inversion symmetry may explain low-lying peaks in the exciton spectrum of boron nitride nanotubes and localized photoemission around impurities and interfaces in carbon nanotubes. The second model in Part II suggests that free charge carriers can mediate an efficient nonradiative decay process for dark excitons in carbon nanotubes. The appendices in Part III

  15. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    Science.gov (United States)

    Es-Sakhi, Azzedin D.

    Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the

  16. Large-area fluidic assembly of single-walled carbon nanotubes through dip-coating and directional evaporation

    Science.gov (United States)

    Kim, Pilnam; Kang, Tae June

    2017-12-01

    We present a simple and scalable fluidic-assembly approach, in which bundles of single-walled carbon nanotubes (SWCNTs) are selectively aligned and deposited by directionally controlled dip-coating and solvent evaporation processes. The patterned surface with alternating regions of hydrophobic polydimethyl siloxane (PDMS) (height 100 nm) strips and hydrophilic SiO2 substrate was withdrawn vertically at a constant speed ( 3 mm/min) from a solution bath containing SWCNTs ( 0.1 mg/ml), allowing for directional evaporation and subsequent selective deposition of nanotube bundles along the edges of horizontally aligned PDMS strips. In addition, the fluidic assembly was applied to fabricate a field effect transistor (FET) with highly oriented SWCNTs, which demonstrate significantly higher current density as well as high turn-off ratio (T/O ratio 100) as compared to that with randomly distributed carbon nanotube bundles (T/O ratio <10).

  17. Label-Free Electrical Detection Using Carbon Nanotube-Based Biosensors

    Directory of Open Access Journals (Sweden)

    Kenzo Maehashi

    2009-07-01

    Full Text Available Label-free detections of biomolecules have attracted great attention in a lot of life science fields such as genomics, clinical diagnosis and practical pharmacy. In this article, we reviewed amperometric and potentiometric biosensors based on carbon nanotubes (CNTs. In amperometric detections, CNT-modified electrodes were used as working electrodes to significantly enhance electroactive surface area. In contrast, the potentiometric biosensors were based on aptamer-modified CNT field-effect transistors (CNTFETs. Since aptamers are artificial oligonucleotides and thus are smaller than the Debye length, proteins can be detected with high sensitivity. In this review, we discussed on the technology, characteristics and developments for commercialization in label-free CNT-based biosensors.

  18. Enhancement of electron field emission of vertically aligned carbon nanotubes by nitrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Cheng, Q.J. [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Plasma Nanoscience, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Chen, X. [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China); Ostrikov, K., E-mail: kostya.ostrikov@csiro.au [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Plasma Nanoscience, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-09-22

    Highlights: > A new and custom-designed bias-enhanced hot-filament chemical vapor deposition system is developed to synthesize vertically aligned carbon nanotubes. > The carbon nanotubes are later treated with nitrogen plasmas. > The electron field emission characteristics of the carbon nanotubes are significantly improved after the nitrogen plasma treatment. > A new physical mechanism is proposed to interpret the improvement of the field emission characteristics. - Abstract: The electron field emission (EFE) characteristics from vertically aligned carbon nanotubes (VACNTs) without and with treatment by the nitrogen plasma are investigated. The VACNTs with the plasma treatment showed a significant improvement in the EFE property compared to the untreated VACNTs. The morphological, structural, and compositional properties of the VACNTs are extensively examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive X-ray spectroscopy. It is shown that the significant EFE improvement of the VACNTs after the nitrogen plasma treatment is closely related to the variation of the morphological and structural properties of the VACNTs. The high current density (299.6 {mu}A/cm{sup 2}) achieved at a low applied field (3.50 V/{mu}m) suggests that the VACNTs after nitrogen plasma treatment can serve as effective electron field emission sources for numerous applications.

  19. Enhancement of electron field emission of vertically aligned carbon nanotubes by nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Wang, B.B.; Cheng, Q.J.; Chen, X.; Ostrikov, K.

    2011-01-01

    Highlights: → A new and custom-designed bias-enhanced hot-filament chemical vapor deposition system is developed to synthesize vertically aligned carbon nanotubes. → The carbon nanotubes are later treated with nitrogen plasmas. → The electron field emission characteristics of the carbon nanotubes are significantly improved after the nitrogen plasma treatment. → A new physical mechanism is proposed to interpret the improvement of the field emission characteristics. - Abstract: The electron field emission (EFE) characteristics from vertically aligned carbon nanotubes (VACNTs) without and with treatment by the nitrogen plasma are investigated. The VACNTs with the plasma treatment showed a significant improvement in the EFE property compared to the untreated VACNTs. The morphological, structural, and compositional properties of the VACNTs are extensively examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive X-ray spectroscopy. It is shown that the significant EFE improvement of the VACNTs after the nitrogen plasma treatment is closely related to the variation of the morphological and structural properties of the VACNTs. The high current density (299.6 μA/cm 2 ) achieved at a low applied field (3.50 V/μm) suggests that the VACNTs after nitrogen plasma treatment can serve as effective electron field emission sources for numerous applications.

  20. Optical trapping of cold neutral atoms using a two-color evanescent light field around a carbon nanotube

    International Nuclear Information System (INIS)

    Nga, Do Thi; Viet, Nguyen Ai; Nga, Dao Thi Thuy; Lan, Nguyen Thi Phuong

    2014-01-01

    We suggest a new schema of trapping cold atoms using a two-color evanescent light field around a carbon nanotube. The two light fields circularly polarized sending through a carbon nanotube generates an evanescent wave around this nanotube. By evanescent effect, the wave decays away from the nanotube producing a set of trapping minima of the total potential in the transverse plane as a ring around the nanotube. This schema allows capture of atoms to a cylindrical shell around the nanotube. We consider some possible boundary conditions leading to the non-trivial bound state solution. Our result will be compared to some recent trapping models and our previous trapping models.

  1. Electrical conductance of carbon nanotubes with misaligned ends

    Energy Technology Data Exchange (ETDEWEB)

    Pantano, Antonio, E-mail: antonio.pantano@unipa.it; Muratore, Giuseppe; Montinaro, Nicola [Universita degli Studi di Palermo, Dipartimento di Ingegneria Chimica, Gestionale, Informatica e Meccanica (Italy)

    2013-09-15

    During a manufacturing process, when a straight carbon nanotube is placed on a substrate, e.g., production of transistors, its two ends are often misaligned. In this study, we investigate the effects of multiwall carbon nanotubes' (MWCNTs) outer diameter and chirality on the change in conductance due to misalignment of the two ends. The length of the studied MWCNTs was 120 nm, while the diameters ranged between 4 and 7 nm. A mixed finite element-tight-binding approach was carefully designed to realize reduction in computational time by orders of magnitude in calculating the deformation-induced changes in the electrical transport properties of the nanotubes. Numerical results suggest that armchair MWCNTs of small diameter should work better if used as conductors, while zigzag MWCNTs of large diameter are more suitable for building sensors.Graphical Abstract.

  2. Outstanding field emission properties of wet-processed titanium dioxide coated carbon nanotube based field emission devices

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jinzhuo; Ou-Yang, Wei, E-mail: ouyangwei@phy.ecnu.edu.cn; Chen, Xiaohong; Guo, Pingsheng; Piao, Xianqing; Sun, Zhuo [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062 (China); Xu, Peng; Wang, Miao [Department of Physics, Zhejiang University, 38 ZheDa Road, Hangzhou 310027 (China); Li, Jun [Department of Electronic Science and Technology, Tongji University, 4800 Caoan Road, Shanghai 201804 (China)

    2015-02-16

    Field emission devices using a wet-processed composite cathode of carbon nanotube films coated with titanium dioxide exhibit outstanding field emission characteristics, including ultralow turn on field of 0.383 V μm{sup −1} and threshold field of 0.657 V μm{sup −1} corresponding with a very high field enhancement factor of 20 000, exceptional current stability, and excellent emission uniformity. The improved field emission properties are attributed to the enhanced edge effect simultaneously with the reduced screening effect, and the lowered work function of the composite cathode. In addition, the highly stable electron emission is found due to the presence of titanium dioxide nanoparticles on the carbon nanotubes, which prohibits the cathode from the influence of ions and free radical created in the emission process as well as residual oxygen gas in the device. The high-performance solution-processed composite cathode demonstrates great potential application in vacuum electronic devices.

  3. Simulation and fabrication of carbon nanotubes field emission pressure sensors

    International Nuclear Information System (INIS)

    Qian Kaiyou; Chen Ting; Yan Bingyong; Lin Yangkui; Xu Dong; Sun Zhuo; Cai Bingchu

    2006-01-01

    A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors

  4. Network single-walled carbon nanotube biosensors for fast and highly sensitive detection of proteins

    International Nuclear Information System (INIS)

    Hu Pingan; Zhang Jia; Wen Zhenzhong; Zhang Can

    2011-01-01

    Detection of proteins is powerfully assayed in the diagnosis of diseases. A strategy for the development of an ultrahigh sensitivity biosensor based on a network single-walled carbon nanotube (SWNT) field-effect transistor (FET) has been demonstrated. Metallic SWNTs (m-SWNTs) in the network nanotube FET were selectively removed or cut via a carefully controlled procedure of electrical break-down (BD), and left non-conducting m-SWNTs which magnified the Schottky barrier (SB) area. This nanotube FET exhibited ultrahigh sensitivity and fast response to biomolecules. The lowest detection limit of 0.5 pM was achieved by exploiting streptavidin (SA) or a biotin/SA pair as the research model, and BD-treated nanotube biosensors had a 2 x 10 4 -fold lower minimum detectable concentration than the device without BD treatment. The response time is in the range of 0.3-3 min.

  5. Simultaneous synthesis of single-walled carbon nanotubes and graphene in a magnetically-enhanced arc plasma.

    Science.gov (United States)

    Li, Jian; Shashurin, Alexey; Kundrapu, Madhusudhan; Keidar, Michael

    2012-02-02

    Carbon nanostructures such as single-walled carbon nanotubes (SWCNT) and graphene attract a deluge of interest of scholars nowadays due to their very promising application for molecular sensors, field effect transistor and super thin and flexible electronic devices(1-4). Anodic arc discharge supported by the erosion of the anode material is one of the most practical and efficient methods, which can provide specific non-equilibrium processes and a high influx of carbon material to the developing structures at relatively higher temperature, and consequently the as-synthesized products have few structural defects and better crystallinity. To further improve the controllability and flexibility of the synthesis of carbon nanostructures in arc discharge, magnetic fields can be applied during the synthesis process according to the strong magnetic responses of arc plasmas. It was demonstrated that the magnetically-enhanced arc discharge can increase the average length of SWCNT (5), narrow the diameter distribution of metallic catalyst particles and carbon nanotubes (6), and change the ratio of metallic and semiconducting carbon nanotubes (7), as well as lead to graphene synthesis (8). Furthermore, it is worthwhile to remark that when we introduce a non-uniform magnetic field with the component normal to the current in arc, the Lorentz force along the J×B direction can generate the plasmas jet and make effective delivery of carbon ion particles and heat flux to samples. As a result, large-scale graphene flakes and high-purity single-walled carbon nanotubes were simultaneously generated by such new magnetically-enhanced anodic arc method. Arc imaging, scanning electron microscope (SEM), transmission electron microscope (TEM) and Raman spectroscopy were employed to analyze the characterization of carbon nanostructures. These findings indicate a wide spectrum of opportunities to manipulate with the properties of nanostructures produced in plasmas by means of controlling the

  6. Chemical detection with nano/bio hybrid devices based on carbon nanotubes and graphene

    Science.gov (United States)

    Lerner, Mitchell Bryant

    Carbon nanotube field-effect transistors (NT-FETs) and graphene field effect transistors (GFETs) provide a unique transduction platform for chemical and biomolecular detection. The work presented in this thesis describes the fabrication, characterization, and investigation of operational mechanisms of carbon-based biosensors. In the first set of experiments, we used carbon nanotubes as fast, all-electronic readout elements in novel vapor sensors, suitable for applications in environmental monitoring and medicine. Molecules bound to the hybrid alter the electrical properties of the NT-FET via several mechanisms, allowing direct detection as a change in the transistor conduction properties. Vapor sensors suitable for more complex system architectures characteristic of mammalian olfaction were demonstrated using NT-FETs functionalized with mouse olfactory receptor (mOR) proteins or single stranded DNA (ssDNA). Substitution of graphene as the channel material enabled production of hundreds of electronically similar devices with high yield. Etching large scale chemical vapor deposition (CVD)-grown graphene into small channels is itself a challenging problem, and we have developed novel fabrication methods to this end without sacrificing the inherent electrical quality that makes graphene such an attractive material. Large arrays of such devices have potential utility for understanding the physics of ligand-receptor interactions and contributing to the development of a new generation of devices for electronic olfaction. Tailored and specific detection was accomplished by chemically functionalizing the NT-FET or GFET with biomolecules, such as proteins or small molecules, to create a hybrid nanostructures. Targets for detection were widely varied, indicating the utility of these techniques, such as 1) live Salmonella cells in nutrient broth, 2) a biomarker protein indicative of prostate cancer, 3) antigen protein from the bacterium that causes Lyme disease, and 4) glucose

  7. A Molecular Dynamics of Cold Neutral Atoms Captured by Carbon Nanotube Under Electric Field and Thermal Effect as a Selective Atoms Sensor.

    Science.gov (United States)

    Santos, Elson C; Neto, Abel F G; Maneschy, Carlos E; Chen, James; Ramalho, Teodorico C; Neto, A M J C

    2015-05-01

    Here we analyzed several physical behaviors through computational simulation of systems consisting of a zig-zag type carbon nanotube and relaxed cold atoms (Rb, Au, Si and Ar). These atoms were chosen due to their different chemical properties. The atoms individually were relaxed on the outside of the nanotube during the simulations. Each system was found under the influence of a uniform electric field parallel to the carbon nanotube and under the thermal effect of the initial temperature at the simulations. Because of the electric field, the cold atoms orbited the carbon nanotube while increasing the initial temperature allowed the variation of the radius of the orbiting atoms. We calculated the following quantities: kinetic energy, potential energy and total energy and in situ temperature, molar entropy variation and average radius of the orbit of the atoms. Our data suggest that only the action of electric field is enough to generate the attractive potential and this system could be used as a selected atoms sensor.

  8. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  9. Carbon Nanotubes and Modern Nanoagriculture

    KAUST Repository

    Serag, Maged F.

    2015-01-27

    Since their discovery, carbon nanotubes have been prominent members of the nanomaterial family. Owing to their extraordinary physical, chemical, and mechanical properties, carbon nanotubes have been proven to be a useful tool in the field of plant science. They were frequently perceived to bring about valuable biotechnological and agricultural applications that still remain beyond experimental realization. An increasing number of studies have demonstrated the ability of carbon nanotubes to traverse different plant cell barriers. These studies, also, assessed the toxicity and environmental impacts of these nanomaterials. The knowledge provided by these studies is of practical and fundamental importance for diverse applications including intracellular labeling and imaging, genetic transformation, and for enhancing our knowledge of plant cell biology. Although different types of nanoparticles have been found to activate physiological processes in plants, carbon nanotubes received particular interest. Following addition to germination medium, carbon nanotubes enhanced root growth and elongation of some plants such as onion, cucumber and rye-grass. They, also, modulated the expression of some genes that are essential for cell division and plant development. In addition, multi-walled carbon nanotubes were evidenced to penetrate thick seed coats, stimulate germination, and to enhance growth of young tomato seedlings. Multi-walled carbon nanotubes can penetrate deeply into the root system and further distribute into the leaves and the fruits. In recent studies, carbon nanotubes were reported to be chemically entrapped into the structure of plant tracheary elements. This should activate studies in the fields of plant defense and wood engineering. Although, all of these effects on plant physiology and plant developmental biology have not been fully understood, the valuable findings promises more research activity in the near future toward complete scientific understanding of

  10. Electrostrictive deformations in small carbon clusters, hydrocarbon molecules, and carbon nanotubes

    International Nuclear Information System (INIS)

    Cabria, I.; Lopez, M. J.; Alonso, J. A.; Amovilli, C.; March, N. H.

    2006-01-01

    The electrostrictive response of small carbon clusters, hydrocarbon molecules, and carbon nanotubes is investigated using the density functional theory. For ringlike carbon clusters, one can get insight on the deformations induced by an electric field from a simple two-dimensional model in which the positive charge of the carbon ions is smeared out in a circular homogeneous line of charge and the electronic density is calculated for a constant applied electric field within a two-dimensional Thomas-Fermi method. According to the Hellmann-Feynman theorem, this model predicts, for fields of about 1 V/A ring , only a small elongation of the ring clusters in the direction of the electric field. Full three-dimensional density functional calculations with an external electric field show similar small deformations in the ring carbon clusters compared to the simple model. The saturated benzene and phenanthrene hydrocarbon molecules do not experience any deformation, even under the action of relatively intense (1 V/A ring ) electric fields. In contrast, finite carbon nanotubes experience larger elongations (∼2.9%) induced by relatively weak (0.1 V/A ring ) applied electric fields. Both C-C bond length elongation and the deformation of the honeycomb structure contribute equally to the nanotube elongation. The effect of the electric field in hydrogen terminated nanotubes is reduced with respect to the nanotubes with dangling bonds in the edges

  11. Fowler Nordheim theory of carbon nanotube based field emitters

    Energy Technology Data Exchange (ETDEWEB)

    Parveen, Shama; Kumar, Avshish [Department of Physics, Jamia Millia Islamia (Central University), New Delhi (India); Husain, Samina [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi (India); Husain, Mushahid, E-mail: mush_reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (Central University), New Delhi (India)

    2017-01-15

    Field emission (FE) phenomena are generally explained in the frame-work of Fowler Nordheim (FN) theory which was given for flat metal surfaces. In this work, an effort has been made to present the field emission mechanism in carbon nanotubes (CNTs) which have tip type geometry at nanoscale. High aspect ratio of CNTs leads to large field enhancement factor and lower operating voltages because the electric field strength in the vicinity of the nanotubes tip can be enhanced by thousand times. The work function of nanostructure by using FN plot has been calculated with reverse engineering. With the help of modified FN equation, an important formula for effective emitting area (active area for emission of electrons) has been derived and employed to calculate the active emitting area for CNT field emitters. Therefore, it is of great interest to present a state of art study on the complete solution of FN equation for CNTs based field emitter displays. This manuscript will also provide a better understanding of calculation of different FE parameters of CNTs field emitters using FN equation.

  12. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.

    Science.gov (United States)

    Liu, Tingting; Zhao, Jianwen; Xu, Weiwei; Dou, Junyan; Zhao, Xinluo; Deng, Wei; Wei, Changting; Xu, Wenya; Guo, Wenrui; Su, Wenming; Jie, Jiansheng; Cui, Zheng

    2018-01-03

    Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec -1 and ON/OFF ratio of 10 6 , which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10 5 ) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

  13. High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2015-02-15

    Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

  14. Vertically aligned multiwalled carbon nanotubes as electronic interconnects

    Science.gov (United States)

    Gopee, Vimal Chandra

    The drive for miniaturisation of electronic circuits provides new materials challenges for the electronics industry. Indeed, the continued downscaling of transistor dimensions, described by Moore’s Law, has led to a race to find suitable replacements for current interconnect materials to replace copper. Carbon nanotubes have been studied as a suitable replacement for copper due to its superior electrical, thermal and mechanical properties. One of the advantages of using carbon nanotubes is their high current carrying capacity which has been demonstrated to be three orders of magnitude greater than that of copper. Most approaches in the implementation of carbon nanotubes have so far focused on the growth in vias which limits their application. In this work, a process is described for the transfer of carbon nanotubes to substrates allowing their use for more varied applications. Arrays of vertically aligned multiwalled carbon nanotubes were synthesised by photo-thermal chemical vapour deposition with high growth rates. Raman spectroscopy was used to show that the synthesised carbon nanotubes were of high quality. The carbon nanotubes were exposed to an oxygen plasma and the nature of the functional groups present was determined using X-ray photoelectron spectroscopy. Functional groups, such as carboxyl, carbonyl and hydroxyl groups, were found to be present on the surface of the multiwalled carbon nanotubes after the functionalisation process. The multiwalled carbon nanotubes were metallised after the functionalisation process using magnetron sputtering. Two materials, solder and sintered silver, were chosen to bind carbon nanotubes to substrates so as to enable their transfer and also to make electrical contact. The wettability of solder to carbon nanotubes was investigated and it was demonstrated that both functionalisation and metallisation were required in order for solder to bond with the carbon nanotubes. Similarly, functionalisation followed by metallisation

  15. Highly selective and sensitive detection of neurotransmitters using receptor-modified single-walled carbon nanotube sensors

    Science.gov (United States)

    Kim, Byeongju; Song, Hyun Seok; Jin, Hye Jun; Park, Eun Jin; Lee, Sang Hun; Lee, Byung Yang; Park, Tai Hyun; Hong, Seunghun

    2013-07-01

    We present receptor-modified carbon nanotube sensors for the highly selective and sensitive detection of acetylcholine (ACh), one kind of neurotransmitter. Here, we successfully expressed the M1 muscarinic acetylcholine receptor (M1 mAChR), a family of G protein-coupled receptors (GPCRs), in E. coli and coated single-walled carbon nanotube (swCNT)-field effect transistors (FETs) with lipid membrane including the receptor, enabling highly selective and sensitive ACh detection. Using this sensor, we could detect ACh at 100 pM concentration. Moreover, we showed that this sensor could selectively detect ACh among other neurotransmitters. This is the first demonstration of the real-time detection of ACh using specific binding between ACh and M1 mAChR, and it may lead to breakthroughs for various applications such as disease diagnosis and drug screening.

  16. Highly selective and sensitive detection of neurotransmitters using receptor-modified single-walled carbon nanotube sensors

    International Nuclear Information System (INIS)

    Kim, Byeongju; Jin, Hye Jun; Park, Eun Jin; Hong, Seunghun; Song, Hyun Seok; Lee, Sang Hun; Park, Tai Hyun; Lee, Byung Yang

    2013-01-01

    We present receptor-modified carbon nanotube sensors for the highly selective and sensitive detection of acetylcholine (ACh), one kind of neurotransmitter. Here, we successfully expressed the M1 muscarinic acetylcholine receptor (M1 mAChR), a family of G protein-coupled receptors (GPCRs), in E. coli and coated single-walled carbon nanotube (swCNT)-field effect transistors (FETs) with lipid membrane including the receptor, enabling highly selective and sensitive ACh detection. Using this sensor, we could detect ACh at 100 pM concentration. Moreover, we showed that this sensor could selectively detect ACh among other neurotransmitters. This is the first demonstration of the real-time detection of ACh using specific binding between ACh and M1 mAChR, and it may lead to breakthroughs for various applications such as disease diagnosis and drug screening. (paper)

  17. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Science.gov (United States)

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-04-25

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  18. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    International Nuclear Information System (INIS)

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-01-01

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs

  19. Electronics with carbon nanotubes

    International Nuclear Information System (INIS)

    Avouris, P.

    2007-01-01

    From mobile phones and laptops to Xboxes and iPods, it is difficult to think of any aspect of modern life that has not been touched by developments in electronics, computing and communications over the last few decades. Many of these technological advances have arisen from our ability to create ever smaller electronic devices, in particular silicon-based field effect transistors (FETs), which has led to denser, faster and less power-hungry circuits. The problem is that this device miniaturization, or 'scaling', cannot continue forever. Fundamental scientific and technological limitations exist that will make it impossible to build better performing silicon devices below a certain size. This potential show-stopper has inspired a worldwide effort to develop alternative device technologies based on 1D materials or those that exploit the spin, as well as the charge, of electrons. One promising and, in principle, simpler approach is to maintain the operating concept of today's silicon-based FETs but to replace a key component of the device - the semiconducting silicon channel - with 1D nanostructures that have much more versatile electrical-transport properties. Among the different 1D materials that have been developed, those with the most desirable properties are 'single-walled' carbon nanotubes, which were first created in 1993 by Sumio Ijima at the NEC Fundamental Research Laboratory in Tsukuba, Japan, and by Donald Bethune of IBM's Almaden Research Center in California. These materials are hollow tubes made from rolled up sheets of carbon just one atom thick, otherwise known as graphene. In the March issue of Physics World, Phaedon Avouris discusses some of the many properties and applications of carbon nanotubes, which he describes as an 'engineer's dream' because of their exceptionally high strength and heat conduction. (U.K.)

  20. Functionalization of single-walled carbon nanotubes regulates their effect on hemostasis

    International Nuclear Information System (INIS)

    Sokolov, A V; Aseychev, A V; Kostevich, V A; Gusev, A A; Gusev, S A; Vlasova, I I

    2011-01-01

    Applications of single-walled carbon nanotubes (SWNTs) in medical field imply the use of drug-coupled carbon nanotubes as well as carbon nanotubes functionalized with different chemical groups that change nanotube surface properties and interactions between nanotubes and cells. Covalent attachment of polyethylene glycol (PEG) to carboxylated single-walled carbon nanotubes (c-SWNT) is known to prevent the nanotubes from interaction with macrophages. Here we characterized nanotube's ability to stimulate coagulation processes in platelet-poor plasma (PPP), and evaluated the effect of SWNTs on platelet aggregation in platelet-rich plasma (PRP). Our study showed that PEG-SWNT did not affect the rate of clotting in PPP, while c-SWNT shortened the clot formation time five times compared to the control PPP. Since c-SWNT failed to accelerate coagulation in plasma lacking coagulation factor XI, it may be suggested that c-SWNT affects the contact activation pathway. In PRP, platelets responded to both SWNT types with irreversible aggregation, as evidenced by changes in the aggregate mean radius. However, the rate of aggregation induced by c-SWNT was two times higher than it was with PEG-SWNT. Cytological analysis also showed that c-SWNT was two times more efficient when compared to PEG-SWNT in aggregating platelets in PRP. Taken together, our results show that functionalization of nanoparticles can diminish their negative influence on blood cells. As seen from our data, modification of c-SWNT with PEG, when only a one percent of carbon atoms is bound to polymer (70 wt %), decreased the nanotube-induced coagulation in PRP and repelled the accelerating effect on the coagulation in PPP. Thus, when functionalized SWNTs are used for administration into bloodstream of laboratory animals, their possible pro-coagulant and pro-aggregating properties must be taken into account.

  1. Functionalization of single-walled carbon nanotubes regulates their effect on hemostasis

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, A V; Aseychev, A V; Kostevich, V A; Gusev, A A; Gusev, S A; Vlasova, I I, E-mail: irina.vlasova@yahoo.com [Research Institute for Physico-Chemical Medicine, FMBA, M. Pirogovskaya Str. 1a, Moscow (Russian Federation)

    2011-04-01

    Applications of single-walled carbon nanotubes (SWNTs) in medical field imply the use of drug-coupled carbon nanotubes as well as carbon nanotubes functionalized with different chemical groups that change nanotube surface properties and interactions between nanotubes and cells. Covalent attachment of polyethylene glycol (PEG) to carboxylated single-walled carbon nanotubes (c-SWNT) is known to prevent the nanotubes from interaction with macrophages. Here we characterized nanotube's ability to stimulate coagulation processes in platelet-poor plasma (PPP), and evaluated the effect of SWNTs on platelet aggregation in platelet-rich plasma (PRP). Our study showed that PEG-SWNT did not affect the rate of clotting in PPP, while c-SWNT shortened the clot formation time five times compared to the control PPP. Since c-SWNT failed to accelerate coagulation in plasma lacking coagulation factor XI, it may be suggested that c-SWNT affects the contact activation pathway. In PRP, platelets responded to both SWNT types with irreversible aggregation, as evidenced by changes in the aggregate mean radius. However, the rate of aggregation induced by c-SWNT was two times higher than it was with PEG-SWNT. Cytological analysis also showed that c-SWNT was two times more efficient when compared to PEG-SWNT in aggregating platelets in PRP. Taken together, our results show that functionalization of nanoparticles can diminish their negative influence on blood cells. As seen from our data, modification of c-SWNT with PEG, when only a one percent of carbon atoms is bound to polymer (70 wt %), decreased the nanotube-induced coagulation in PRP and repelled the accelerating effect on the coagulation in PPP. Thus, when functionalized SWNTs are used for administration into bloodstream of laboratory animals, their possible pro-coagulant and pro-aggregating properties must be taken into account.

  2. Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors

    Science.gov (United States)

    Zhang, Jian; Liu, Siyu; Nshimiyimana, Jean Pierre; Deng, Ya; Hu, Xiao; Chi, Xiannian; Wu, Pei; Liu, Jia; Chu, Weiguo; Sun, Lianfeng

    2018-06-01

    A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.

  3. Recent advances in carbon nanotube-based electronics

    International Nuclear Information System (INIS)

    Sharma, Prithu; Ahuja, Prerit

    2008-01-01

    CNT-electronics is a field involving synthesis of carbon nanotubes-based novel electronic circuits, comparable to the size of molecules, the practically fundamental size possible. It has brought a new paradigm in science as it has enabled scientists to increase the device integration density tremendously, hence achieving better efficiency and speed. Here we review the state-of-art current research on the applications of CNTs in electronics and present recent results outlining their potential along with illustrating some current concerns in the research field. Unconventional projects such as CNT-based biological sensors, transistors, field emitters, integrated circuits, etc. are taking CNT-based electronics to its extremes. The field holds a promise for mass production of high speed and efficient electronic devices. However, the chemical complexity, reproducibility and other factors make the field a challenging one, which need to be addressed before the field realizes its true potential

  4. An Overview of Carbon Nanotubes and Graphene for Biosensing Applications

    Institute of Scientific and Technical Information of China (English)

    Zanzan; Zhu

    2017-01-01

    With the development of carbon nanomaterials in recent years, there has been an explosion of interests in using carbon nanotubes(CNTs) and graphene for developing new biosensors. It is believed that employing CNTs and graphene as sensor components can make sensors more reliable, accurate, and fast due to their remarkable properties. Depending on the types of target molecular, different strategies can be applied to design sensor device. This review article summarized the important progress in developing CNT-and graphene-based electrochemical biosensors, field-effect transistor biosensors, and optical biosensors. Although CNTs and graphene have led to some groundbreaking discoveries, challenges are still remained and the state-of-the-art sensors are far from a practical application. As a conclusion, future effort has to be made through an interdisciplinary platform, including materials science, biology, and electric engineering.

  5. An Overview of Carbon Nanotubes and Graphene for Biosensing Applications

    Institute of Scientific and Technical Information of China (English)

    Zanzan Zhu

    2017-01-01

    With the development of carbon nanomaterials in recent years, there has been an explosion of interests in using carbon nanotubes (CNTs) and graphene for developing new biosensors. It is believed that employing CNTs and graphene as sensor components can make sensors more reliable, accurate, and fast due to their remarkable properties. Depending on the types of target molecular, different strategies can be applied to design sensor device. This review article summarized the important progress in developing CNT- and graphene-based electrochemical biosensors, field-effect transistor biosensors, and optical biosensors. Although CNTs and graphene have led to some groundbreaking discoveries, challenges are still remained and the state-of-the-art sensors are far from a practical application. As a conclusion, future effort has to be made through an interdisciplinary platform, including materials science, biology, and electric engineering.

  6. Dissociation of single-strand DNA: single-walled carbon nanotube hybrids by Watson-Crick base-pairing.

    Science.gov (United States)

    Jung, Seungwon; Cha, Misun; Park, Jiyong; Jeong, Namjo; Kim, Gunn; Park, Changwon; Ihm, Jisoon; Lee, Junghoon

    2010-08-18

    It has been known that single-strand DNA wraps around a single-walled carbon nanotube (SWNT) by pi-stacking. In this paper it is demonstrated that such DNA is dissociated from the SWNT by Watson-Crick base-pairing with a complementary sequence. Measurement of field effect transistor characteristics indicates a shift of the electrical properties as a result of this "unwrapping" event. We further confirm the suggested process through Raman spectroscopy and gel electrophoresis. Experimental results are verified in view of atomistic mechanisms with molecular dynamics simulations and binding energy analyses.

  7. Selective growth of carbon nanotube on silicon substrates

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOT; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies,and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.

  8. Accelerating Gas Adsorption on 3D Percolating Carbon Nanotubes.

    Science.gov (United States)

    Li, Hui; Wen, Chenyu; Zhang, Youwei; Wu, Dongping; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-02-18

    In the field of electronic gas sensing, low-dimensional semiconductors such as single-walled carbon nanotubes (SWCNTs) can offer high detection sensitivity owing to their unprecedentedly large surface-to-volume ratio. The sensitivity and responsivity can further improve by increasing their areal density. Here, an accelerated gas adsorption is demonstrated by exploiting volumetric effects via dispersion of SWCNTs into a percolating three-dimensional (3D) network in a semiconducting polymer. The resultant semiconducting composite film is evaluated as a sensing membrane in field effect transistor (FET) sensors. In order to attain reproducible characteristics of the FET sensors, a pulsed-gate-bias measurement technique is adopted to eliminate current hysteresis and drift of sensing baseline. The rate of gas adsorption follows the Langmuir-type isotherm as a function of gas concentration and scales with film thickness. This rate is up to 5 times higher in the composite than only with an SWCNT network in the transistor channel, which in turn results in a 7-fold shorter time constant of adsorption with the composite. The description of gas adsorption developed in the present work is generic for all semiconductors and the demonstrated composite with 3D percolating SWCNTs dispersed in functional polymer represents a promising new type of material for advanced gas sensors.

  9. Improved field emission properties of thiolated multi-wall carbon nanotubes on a flexible carbon cloth substrate

    International Nuclear Information System (INIS)

    Chuang, F T; Chen, P Y; Cheng, T C; Chien, C H; Li, B J

    2007-01-01

    In this paper we report the observation of enhanced field emission properties from thiolated multi-wall carbon nanotubes (MWCNTs) produced by a simple and effective two-step chemical surface modification technique. This technique implements carboxylation and thiolation on the MWCNTs synthesized by microwave plasma chemical vapor deposition (MPCVD) on the flexible carbon cloth substrate. The resulting thiolated MWCNTs were found to have a very low threshold field value of 1.25 V μm -1 and a rather high field enhancement factor of 1.93 x 10 4 , which are crucial for applications in versatile vacuum microelectronics

  10. Emitter spacing effects on field emission properties of laser-treated single-walled carbon nanotube buckypapers

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yiwen; Miao, Hsin-Yuan; Zhang Mei; Liang, Richard; Zhang, Chuck; Wang, Ben [High-Performance Materials Institute, Florida State University, Tallahassee, FL 32310 (United States); Lin, Ryan Jiyao, E-mail: kenymiao@thu.edu.tw, E-mail: mzhang@eng.fsu.edu [Department of Electrical and Computer Engineering, Rose-Hulman Institute of Technology, Terre Haute, IN 47803 (United States)

    2010-12-10

    Carbon nanotube (CNT) emitters on buckypaper were activated by laser treatment and their field emission properties were investigated. The pristine buckypapers and CNT emitters' height, diameter, and spacing were characterized through optical analysis. The emitter spacing directly impacted the emission results when the laser power and treatment times were fixed. The increasing emitter density increased the enhanced field emission current and luminance. However, a continuous and excessive increase of emitter density with spacing reduction generated the screening effect. As a result, the extended screening effect from the smaller spacing eventually crippled the field emission effectiveness. Luminance intensity and uniformity of field emission suggest that the highly effective buckypaper will have a density of 2500 emission spots cm{sup -2}, which presents an effective field enhancement factor of 3721 and a moderated screening effect of 0.005. Proper laser treatment is an effective post-treatment process for optimizing field emission, luminance, and durability performance for buckypaper cold cathodes.

  11. Effect of amino acid-functionalized multi-walled carbon nanotubes ...

    Indian Academy of Sciences (India)

    In a single-step, rapid microwave-assisted process, multi-walled carbon nanotubes were functionalized by -valine amino acid. Formation of amino acid on nanotube surface was confirmed by Fourier transform-infrared spectroscopy, thermogravimetric analysis, X-ray diffraction, field emission scanning and transmission ...

  12. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

    Science.gov (United States)

    Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

    2015-11-13

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

  13. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

  14. Nanometer size field effect transistors for terahertz detectors

    International Nuclear Information System (INIS)

    Knap, W; Rumyantsev, S; Coquillat, D; Dyakonova, N; Teppe, F; Vitiello, M S; Tredicucci, A; Blin, S; Shur, M; Nagatsuma, T

    2013-01-01

    Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation. (paper)

  15. Review on properties, dispersion and toxicology of carbon nanotubes

    International Nuclear Information System (INIS)

    Saeed, K.

    2010-01-01

    Carbon nanotubes (CNTs) have the most intensely studied nano structures because of their unique properties. There are two types of carbon nanotubes CNTs, single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs), prepared by chemical-vapour deposition (CVD), plasma enhanced chemical-vapour deposition, thermal chemical vapour deposition, Vapour phase growth, Arc discharge and Lasser ablation. Both single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs) possess high mechanical and electrical conductivity, ultra-light weight, high aspect ratio and have excellent chemical and thermal stabilities. They also possess semi- and metallic-conductive properties depending upon their chirality. This review focuses on progress toward functionalization (not only dispersed nano tube but also dramatically improve their solubility), preparation and purification, composites and the toxicity of the carbon nanotubes (CNTs). The functional groups attached to carbon nanotubes (CNTs) should react with polymers and improve the mechanical properties of the nano composites. Carbon nanotubes (CNTs) has significant application in pharmaceutical field such as drug delivery and nano medicine, but the available literature also suggests that carbon nanotubes (CNTs) may have unusual toxicity and have more adverse effects than the same mass of nano size carbon and quartz. (author)

  16. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

    Science.gov (United States)

    Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

    2017-06-01

    Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 5 cm 2 V -1 s -1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V -1 s -1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Light radiation through a transparent cathode plate with single-walled carbon nanotube field emitters

    International Nuclear Information System (INIS)

    Jang, E.S.; Goak, J.C.; Lee, H.S.; Lee, S.H.; Han, J.H.; Lee, C.S.; Sok, J.H.; Seo, Y.H.; Park, K.S.; Lee, N.S.

    2010-01-01

    In the conventional carbon nanotube backlight units (CNT-BLUs), light passes through the phosphor-coated anode glass plate, which thus faces closely the thin film transistor (TFT) backplate of a liquid crystal display panel. This configuration makes heat dissipation structurally difficult because light emission and heat generation occur simultaneously at the anode. We propose a novel configuration of a CNT-BLU where the cathode rather than the anode faces the TFT backplate by turning it upside down. In this design, light passes through the transparent cathode glass plate while heating occurs at the anode. We demonstrated a novel design of CNT-BLU by fabricating transparent single-walled CNT field emitters on the cathode and by coating a reflecting metal layer on the anode. This study hopefully provides a clue to solve the anode-heating problem which would be inevitably confronted for high-luminance and large-area CNT-BLUs.

  18. Chemical reactions confined within carbon nanotubes.

    Science.gov (United States)

    Miners, Scott A; Rance, Graham A; Khlobystov, Andrei N

    2016-08-22

    In this critical review, we survey the wide range of chemical reactions that have been confined within carbon nanotubes, particularly emphasising how the pairwise interactions between the catalysts, reactants, transition states and products of a particular molecular transformation with the host nanotube can be used to control the yields and distributions of products of chemical reactions. We demonstrate that nanoscale confinement within carbon nanotubes enables the control of catalyst activity, morphology and stability, influences the local concentration of reactants and products thus affecting equilibria, rates and selectivity, pre-arranges the reactants for desired reactions and alters the relative stability of isomeric products. We critically evaluate the relative advantages and disadvantages of the confinement of chemical reactions inside carbon nanotubes from a chemical perspective and describe how further developments in the controlled synthesis of carbon nanotubes and the incorporation of multifunctionality are essential for the development of this ever-expanding field, ultimately leading to the effective control of the pathways of chemical reactions through the rational design of multi-functional carbon nanoreactors.

  19. Intra- and inter-shell Kondo effects in carbon nanotube quantum dots

    Science.gov (United States)

    Krychowski, Damian; Lipiński, Stanisław

    2018-01-01

    The linear response transport properties of carbon nanotube quantum dot in the strongly correlated regime are discussed. The finite-U mean field slave boson approach is used to study many-body effects. Magnetic field can rebuilt Kondo correlations, which are destroyed by the effect of spin-orbit interaction or valley mixing. Apart from the field induced revivals of SU(2) Kondo effects of different types: spin, valley or spin-valley, also more exotic phenomena appear, such as SU(3) Kondo effect. Threefold degeneracy occurs due to the effective intervalley exchange induced by short-range part of Coulomb interaction or due to the intershell mixing. In narrow gap nanotubes the full spin-orbital degeneracy might be recovered in the absence of magnetic field opening the condition for a formation of SU(4) Kondo resonance.

  20. Fullerenes, carbon nanotubes, and graphene for molecular electronics.

    Science.gov (United States)

    Pinzón, Julio R; Villalta-Cerdas, Adrián; Echegoyen, Luis

    2012-01-01

    With the constant growing complexity of electronic devices, the top-down approach used with silicon based technology is facing both technological and physical challenges. Carbon based nanomaterials are good candidates to be used in the construction of electronic circuitry using a bottom-up approach, because they have semiconductor properties and dimensions within the required physical limit to establish electrical connections. The unique electronic properties of fullerenes for example, have allowed the construction of molecular rectifiers and transistors that can operate with more than two logical states. Carbon nanotubes have shown their potential to be used in the construction of molecular wires and FET transistors that can operate in the THz frequency range. On the other hand, graphene is not only the most promising material for replacing ITO in the construction of transparent electrodes but it has also shown quantum Hall effect and conductance properties that depend on the edges or chemical doping. The purpose of this review is to present recent developments on the utilization carbon nanomaterials in molecular electronics.

  1. Transport properties of finite carbon nanotubes under electric and magnetic fields

    International Nuclear Information System (INIS)

    Li, T S; Lin, M F

    2006-01-01

    Electronic and transport properties of finite carbon nanotubes subject to the influences of a transverse electric field and a magnetic field with varying polar angles are studied by the tight-binding model. The external fields will modify the state energies, destroy the state degeneracy, and modulate the energy gap. Both the state energy and the energy gap exhibit rich dependence on the field strength, the magnetic field direction, and the types of carbon nanotubes. The semiconductor-metal transition would be allowed for certain field strengths and magnetic field directions. The variations of state energies with the external fields will also be reflected in the electrical and thermal conductance. The number, the heights, and the positions of the conductance peaks are strongly dependent on the external fields. The heights of the electrical and thermal conductance peaks display a quantized behaviour, while that of the Peltier coefficient does not. Finally, it is found that the validity of the Wiedemann-Franz law depends upon the temperature, the field strength, the electronic structure, and the chemical potential

  2. Plasma-induced field emission and plasma expansion of carbon nanotube cathodes

    International Nuclear Information System (INIS)

    Liao Qingliang; Zhang Yue; Qi Junjie; Huang Yunhua; Xia Liansheng; Gao Zhanjun; Gu Yousong

    2007-01-01

    High intensity electron emission cathodes based on carbon nanotube films have been successfully fabricated. An investigation of the explosive field emission properties of the carbon nanotube cathode in a double-pulse mode was presented and a high emission current density of 245 A cm -2 was obtained. The formation of the cathode plasma layer was proved and the production process of the electron beams from the cathode was explained. The time and space resolution of the electron beams flow from the cathode was investigated. The plasma expanded at a velocity of ∼8.17 cm μs -1 towards the anode and influenced on the intensity and distribution of electron beams obviously. The formation of cathode plasma had no preferential position and the local enhancement of electron beams was random. This carbon nanotube cathode appears to be suitable for high-power microwave device applications

  3. Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors

    KAUST Repository

    Choi, Hyun Ho; Rodionov, Yaroslav I.; Paterson, Alexandra F.; Panidi, Julianna; Saranin, Danila; Kharlamov, Nikolai; Didenko, Sergei I.; Anthopoulos, Thomas D.; Cho, Kilwon; Podzorov, Vitaly

    2018-01-01

    Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

  4. Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors

    KAUST Repository

    Choi, Hyun Ho

    2018-04-30

    Charge carrier mobility is an important characteristic of organic field-effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky-barrier contact resistance, that can be efficiently addressed by measurements in 4-probe/Hall-bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4-probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic-semiconductor blends and bulk single crystals. Numerical simulations reveal that 4-probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.

  5. Detecting Lyme disease using antibody-functionalized carbon nanotubes

    Science.gov (United States)

    Dailey, Jennifer; Lerner, Mitchell; Goldsmith, Brett; Brisson, Dustin; Johnson, A. T. Charlie

    2011-03-01

    We combine antibodies for Lyme flagellar protein with carbon nanotube transistors to create an electronic sensor capable of definitive detection of Lyme disease. Over 35,000 cases of Lyme disease are reported in the United States each year, of which more than 23 percent are originally misdiagnosed. Rational design of the coupling of the biological system to the electronic system gives us a flexible sensor platform which we can apply to several biological systems. By coupling these antibodies to carbon nanotubes in particular, we allow for fast, sensitive, highly selective, electronic detection. Unlike antibody or biomarker detection, bacterial protein detection leads to positive identification of both early and late stage bacterial infections, and is easily expandable to environmental monitoring.

  6. Electronic transport properties of carbon nanotube metal-semiconductor-metal

    Directory of Open Access Journals (Sweden)

    F Khoeini

    2008-07-01

    Full Text Available  In this work, we study electronic transport properties of a quasi-one dimensional pure semi-conducting Zigzag Carbon Nanotube (CNT attached to semi-infinite clean metallic Zigzag CNT leads, taking into account the influence of topological defect in junctions. This structure may behave like a field effect transistor. The calculations are based on the tight-binding model and Green’s function method, in which the local density of states(LDOS in the metallic section to semi-conducting section, and muli-channel conductance of the system are calculated in the coherent and linear response regime, numerically. Also we have introduced a circuit model for the system and investigated its current. The theoretical results obtained, can be a base, for developments in designing nano-electronic devices.

  7. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  8. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi

    2017-01-01

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer

  9. Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.

    Science.gov (United States)

    Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Zhang, Jialu; Zhou, Chongwu

    2011-02-22

    Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO(2) as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.

  10. Method for nano-pumping using carbon nanotubes

    Science.gov (United States)

    Insepov, Zeke [Darien, IL; Hassanein, Ahmed [Bolingbrook, IL

    2009-12-15

    The present invention relates generally to the field of nanotechnology, carbon nanotubes and, more specifically, to a method and system for nano-pumping media through carbon nanotubes. One preferred embodiment of the invention generally comprises: method for nano-pumping, comprising the following steps: providing one or more media; providing one or more carbon nanotubes, the one or more nanotubes having a first end and a second end, wherein said first end of one or more nanotubes is in contact with the media; and creating surface waves on the carbon nanotubes, wherein at least a portion of the media is pumped through the nanotube.

  11. Structures of water molecules in carbon nanotubes under electric fields

    International Nuclear Information System (INIS)

    Winarto,; Takaiwa, Daisuke; Yamamoto, Eiji; Yasuoka, Kenji

    2015-01-01

    Carbon nanotubes (CNTs) are promising for water transport through membranes and for use as nano-pumps. The development of CNT-based nanofluidic devices, however, requires a better understanding of the properties of water molecules in CNTs because they can be very different from those in the bulk. Using all-atom molecular dynamics simulations, we investigate the effect of axial electric fields on the structure of water molecules in CNTs having diameters ranging from (7,7) to (10,10). The water dipole moments were aligned parallel to the electric field, which increases the density of water inside the CNTs and forms ordered ice-like structures. The electric field induces the transition from liquid to ice nanotubes in a wide range of CNT diameters. Moreover, we found an increase in the lifetime of hydrogen bonds for water structures in the CNTs. Fast librational motion breaks some hydrogen bonds, but the molecular pairs do not separate and the hydrogen bonds reform. Thus, hydrogen bonds maintain the water structure in the CNTs, and the water molecules move collectively, decreasing the axial diffusion coefficient and permeation rate

  12. Effectively Improved Field Emission Properties of Multiwalled Carbon Nanotubes/Graphenes Composite Field Emitter by Covering on the Si Pyramidal Structure

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The composite nanostructure emitter of multiwalled carbon nanotubes and graphenes was deposited on pyramidal silicon substrate by the simple larger scale electrophoretic deposition process. The field emission (FE) properties of the composite/pyramidal Si device were greatly improved compared...

  13. Organic field-effect transistors using single crystals

    International Nuclear Information System (INIS)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-01-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

  14. Growth and field emission properties of one-dimensional carbon composite structure consisting of vertically aligned carbon nanotubes and nanocones

    International Nuclear Information System (INIS)

    Zhang Hongxin; Feng, Peter X; Fonseca, Luis; Morell, Gerardo; Makarov, Vladimir I; Weiner, Brad R

    2009-01-01

    A simple approach is demonstrated for quickly growing a large-area aligned carbon composite nanostructure consisting of vertically aligned nanotubes and nanocones by the catalyst-assisted pulsed laser deposition techniques. The pyrolytic graphite was used as carbon source. The carbon nanocones were first grown on the molybdenum substrate with Ni catalysts. The carbon nanotubes have a uniform shape and length, aligned vertically on carbon nanocones, and the average diameter is about 7 nm. The special carbon composite arrays exhibit excellent field emission behaviours. The long-term field emission current stability of the one-dimensioned carbon nanostructure has also been investigated. No obvious current density decay was observed after a 10-day continuous experiment, indicating the super stability of the sample as cathode material.

  15. Study on the growth of aligned carbon nanotubes controlled by ion bombardment

    International Nuclear Information System (INIS)

    Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

    2004-01-01

    Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes

  16. Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Z.T., E-mail: jiangzhaotan@hotmail.com; Lv, Z.T.; Zhang, X.D.

    2017-06-21

    Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. - Highlights: • Electromechanical transistors are designed with multilayer phosphorene nanoribbons. • Electromechanical synergistic effect can establish the on–off switching more flexibly. • Multilayer transistors, solider and more easily biased, has more transport channels. • Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.

  17. Carbon nanotubes for thermal interface materials in microelectronic packaging

    Science.gov (United States)

    Lin, Wei

    As the integration scale of transistors/devices in a chip/system keeps increasing, effective cooling has become more and more important in microelectronics. To address the thermal dissipation issue, one important solution is to develop thermal interface materials with higher performance. Carbon nanotubes, given their high intrinsic thermal and mechanical properties, and their high thermal and chemical stabilities, have received extensive attention from both academia and industry as a candidate for high-performance thermal interface materials. The thesis is devoted to addressing some challenges related to the potential application of carbon nanotubes as thermal interface materials in microelectronics. These challenges include: 1) controlled synthesis of vertically aligned carbon nanotubes on various bulk substrates via chemical vapor deposition and the fundamental understanding involved; 2) development of a scalable annealing process to improve the intrinsic properties of synthesized carbon nanotubes; 3) development of a state-of-art assembling process to effectively implement high-quality vertically aligned carbon nanotubes into a flip-chip assembly; 4) a reliable thermal measurement of intrinsic thermal transport property of vertically aligned carbon nanotube films; 5) improvement of interfacial thermal transport between carbon nanotubes and other materials. The major achievements are summarized. 1. Based on the fundamental understanding of catalytic chemical vapor deposition processes and the growth mechanism of carbon nanotube, fast synthesis of high-quality vertically aligned carbon nanotubes on various bulk substrates (e.g., copper, quartz, silicon, aluminum oxide, etc.) has been successfully achieved. The synthesis of vertically aligned carbon nanotubes on the bulk copper substrate by the thermal chemical vapor deposition process has set a world record. In order to functionalize the synthesized carbon nanotubes while maintaining their good vertical alignment

  18. Development of Field-Emission Electron Gun from Carbon Nanotubes

    CERN Document Server

    Hozumi, Y

    2004-01-01

    Aiming to use a narrow energy-spread electron beam easily and low costly on injector electron guns, we have been tested field emission cathodes of carbon nanotubes (CNTs). Experiments for these three years brought us important suggestions and a few rules of thumb. Now at last, anode current of 3.0 [A/cm2

  19. Attachment of a Genetically Engineered Antibody to a Carbon Nanotube Transistor for Detection of Prostate Cancer Biomarkers

    Science.gov (United States)

    Lerner, Mitchell; Dailey, Jennifer; Goldsmith, Brett; Robinson, Matthew; Johnson, A. T. Charlie

    2011-03-01

    We have developed a novel detection method for osteopontin (OPN) by attaching an engineered single chain variable fragment (scFv) protein with high binding affinity for OPN to a carbon nanotube transistor. Osteopontin is a potential new biomarker for prostate cancer; its presence in humans is already associated with several forms of cancer, arthritis, osteoporosis and stress. Prostate cancer is the most commonly diagnosed cancer and second leading cause of cancer deaths among American men and as such represents a major public health issue. Detection of early-stage cancer often results in successful treatment, with long term disease-free survival in 60-90% of patients. Electronic transport measurements are used to detect the presence of OPN in solution at clinically relevant concentrations.

  20. Graphene Field Effect Transistor for Radiation Detection

    Science.gov (United States)

    Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

    2016-01-01

    The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

  1. Upgrading non-oxidized carbon nanotubes by thermally decomposed hydrazine

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Pen-Cheng, E-mail: wangpc@ess.nthu.edu.tw [Department of Engineering and System Science, National Tsing Hua University, 101 Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan (China); Graduate Program for Science and Technology of Synchrotron Light Source, National Tsing Hua University, 101 Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan (China); Liao, Yu-Chun [Department of Engineering and System Science, National Tsing Hua University, 101 Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan (China); Graduate Program for Science and Technology of Synchrotron Light Source, National Tsing Hua University, 101 Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan (China); National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China); Liu, Li-Hung [Department of Engineering and System Science, National Tsing Hua University, 101 Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan (China); Lai, Yu-Ling; Lin, Ying-Chang [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China); Hsu, Yao-Jane [Graduate Program for Science and Technology of Synchrotron Light Source, National Tsing Hua University, 101 Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan (China); National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan (China)

    2014-06-01

    We found that the electrical properties of conductive thin films based on non-oxidized carbon nanotubes (CNTs) could be further improved when the CNTs consecutively underwent a mild hydrazine adsorption treatment and then a sufficiently effective thermal desorption treatment. We also found that, after several rounds of vapor-phase hydrazine treatments and baking treatments were applied to an inferior single-CNT field-effect transistor device, the device showed improvement in I{sub on}/I{sub off} ratio and reduction in the extent of gate-sweeping hysteresis. Our experimental results indicate that, even though hydrazine is a well-known reducing agent, the characteristics of our hydrazine-exposed CNT samples subject to certain treatment conditions could become more graphenic than graphanic, suggesting that the improvement in the electrical and electronic properties of CNT samples could be related to the transient bonding and chemical scavenging of thermally decomposed hydrazine on the surface of CNTs.

  2. Upgrading non-oxidized carbon nanotubes by thermally decomposed hydrazine

    Science.gov (United States)

    Wang, Pen-Cheng; Liao, Yu-Chun; Liu, Li-Hung; Lai, Yu-Ling; Lin, Ying-Chang; Hsu, Yao-Jane

    2014-06-01

    We found that the electrical properties of conductive thin films based on non-oxidized carbon nanotubes (CNTs) could be further improved when the CNTs consecutively underwent a mild hydrazine adsorption treatment and then a sufficiently effective thermal desorption treatment. We also found that, after several rounds of vapor-phase hydrazine treatments and baking treatments were applied to an inferior single-CNT field-effect transistor device, the device showed improvement in Ion/Ioff ratio and reduction in the extent of gate-sweeping hysteresis. Our experimental results indicate that, even though hydrazine is a well-known reducing agent, the characteristics of our hydrazine-exposed CNT samples subject to certain treatment conditions could become more graphenic than graphanic, suggesting that the improvement in the electrical and electronic properties of CNT samples could be related to the transient bonding and chemical scavenging of thermally decomposed hydrazine on the surface of CNTs.

  3. Growth of vertically aligned arrays of carbon nanotubes for high field emission

    International Nuclear Information System (INIS)

    Kim, D.; Lim, S.H.; Guilley, A.J.; Cojocaru, C.S.; Bouree, J.E.; Vila, L.; Ryu, J.H.; Park, K.C.; Jang, J.

    2008-01-01

    Vertically aligned multi-walled carbon nanotubes have been grown on Ni-coated silicon substrates, by using either direct current diode or triode plasma-enhanced chemical vapor deposition at low temperature (around 620 deg. C). Acetylene gas has been used as the carbon source while ammonia and hydrogen have been used for etching. However densely packed (∼ 10 9 cm -2 ) CNTs were obtained when the pressure was ∼ 100 Pa. The alignment of nanotubes is a necessary, but not a sufficient condition in order to get an efficient electron emission: the growth of nanotubes should be controlled along regular arrays, in order to minimize the electrostatic interactions between them. So a three dimensional numerical simulation has been developed to calculate the local electric field in the vicinity of the tips for a finite square array of nanotubes and thus to calculate the maximum of the electron emission current density as a function of the spacing between nanotubes. Finally the triode plasma-enhanced process combined with pre-patterned catalyst films (using different lithography techniques) has been chosen in order to grow regular arrays of aligned CNTs with different pitches in the micrometer range. The comparison between the experimental and the simulation data permits to define the most efficient CNT-based electron field emitters

  4. Carrier velocity effect on carbon nanotube Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Fathi, Amir, E-mail: fathi.amir@hotmail.com [Urmia University, Department of Electrical Engineering, Microelectronic Research Laboratory (Iran, Islamic Republic of); Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir; Ismail, Razali, E-mail: Razali@fke.utm.my [University Technology Malaysia, Department of Electronic Engineering (Malaysia)

    2016-08-15

    One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to the small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.

  5. Carbon nanotube computer.

    Science.gov (United States)

    Shulaker, Max M; Hills, Gage; Patil, Nishant; Wei, Hai; Chen, Hong-Yu; Wong, H-S Philip; Mitra, Subhasish

    2013-09-26

    The miniaturization of electronic devices has been the principal driving force behind the semiconductor industry, and has brought about major improvements in computational power and energy efficiency. Although advances with silicon-based electronics continue to be made, alternative technologies are being explored. Digital circuits based on transistors fabricated from carbon nanotubes (CNTs) have the potential to outperform silicon by improving the energy-delay product, a metric of energy efficiency, by more than an order of magnitude. Hence, CNTs are an exciting complement to existing semiconductor technologies. Owing to substantial fundamental imperfections inherent in CNTs, however, only very basic circuit blocks have been demonstrated. Here we show how these imperfections can be overcome, and demonstrate the first computer built entirely using CNT-based transistors. The CNT computer runs an operating system that is capable of multitasking: as a demonstration, we perform counting and integer-sorting simultaneously. In addition, we implement 20 different instructions from the commercial MIPS instruction set to demonstrate the generality of our CNT computer. This experimental demonstration is the most complex carbon-based electronic system yet realized. It is a considerable advance because CNTs are prominent among a variety of emerging technologies that are being considered for the next generation of highly energy-efficient electronic systems.

  6. Field emission from individual multiwalled carbon nanotubes prepared in an electron microscope

    NARCIS (Netherlands)

    de Jonge, N.; van Druten, N.J.

    2003-01-01

    Individual multiwalled carbon nanotube field emitters were prepared in a scanning electron microscope. The angular current density, energy spectra, and the emission stability of the field-emitted electrons were measured. An estimate of the electron source brightness was extracted from the

  7. High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

    International Nuclear Information System (INIS)

    Hojati-Talemi, Pejman; Gibson, Mark A.; East, Daniel; Simon, George P.

    2011-01-01

    We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

  8. High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

    Energy Technology Data Exchange (ETDEWEB)

    Hojati-Talemi, Pejman [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia); Mawson Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Gibson, Mark A. [Process Science and Engineering, Commonwealth Scientific and Industrial Research Organisation, Clayton, Vic 3168 (Australia); East, Daniel; Simon, George P. [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia)

    2011-11-07

    We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

  9. Magnetoelectronic properties of chiral carbon nanotubes and tori

    International Nuclear Information System (INIS)

    Shyu, F L; Tsai, C C; Lee, C H; Lin, M F

    2006-01-01

    Magnetoelectronic properties of chiral carbon nanotubes and toroids are studied for any magnetic field. They are sensitive to the changes in the magnitude and the direction of the magnetic field, as well as the chirality. The important differences between chiral and achiral carbon nanotubes include band symmetry, band curvature, band crossing, band-edge state, state degeneracy, band spacing, energy gap, and semiconductor-metal transition. Carbon tori also exhibit the strong chirality dependence on the field modulation of discrete states. Chiral carbon tori might differ from chiral carbon nanotubes in energy-gap modulation, density of states, and state degeneracy

  10. Correlation and dimensional effects of trions in carbon nanotubes

    DEFF Research Database (Denmark)

    Rønnow, Troels Frimodt; Pedersen, Thomas Garm; Cornean, Horia

    2010-01-01

    We study the binding energies of singlet trions, i.e., charged excitons, in carbon nanotubes. The problem is modeled, through the effective-mass model, as a three-particle complex on the surface of a cylinder, which we investigate using both one- and two-dimensional expansions of the wave function...... are used to compute physical binding energies for a wide selection of carbon nanotubes. In addition, the dependence on dielectric screening is examined. Our findings indicate that trions are detectable at room temperature in carbon nanotubes with radius below 8 Å....

  11. Long term investigations of carbon nanotube transistors encapsulated by atomic-layer-deposited Al2O3 for sensor applications

    International Nuclear Information System (INIS)

    Helbling, T; Hierold, C; Roman, C; Durrer, L; Mattmann, M; Bright, V M

    2009-01-01

    Single-walled carbon nanotube field-effect transistors (CNFETs) are promising functional structures in future micro- or nanoelectronic systems and sensor applications. Research on the fundamental device concepts includes the investigation of the conditions for stable long term CNFET operation. CNFET operation in ambient air leads to on-state current degradation and fluctuating signals due to the well-known sensitivity of the electronic properties of the CNT to many environmental condition changes. It is the goal of device and sensor research to understand various kinds of sensor-environment interactions and to overcome the environmental sensitivity. Here, we show that the encapsulation of CNFETs by a thermal atomic-layer-deposited (ALD) aluminium oxide (Al 2 O 3 ) layer of approximately 100 nm leads to stable device operation for 260 days and reduces their sensitivity to the environment. The characteristics of CNFETs prior to and after Al 2 O 3 encapsulation are comparatively investigated. It is found that encapsulation improves the stability of the CNFET characteristics with respect to the gate threshold voltage, hysteresis width and the on-state current, while 1/f noise is lowered by up to a factor of 7. Finally, CNFETs embedded in a dielectric membrane are employed as pressure sensors to demonstrate sensor operation of CNFETs encapsulated by ALD as piezoresistive transducers.

  12. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

    Science.gov (United States)

    Brady, Gerald J.; Way, Austin J.; Safron, Nathaniel S.; Evensen, Harold T.; Gopalan, Padma; Arnold, Michael S.

    2016-01-01

    Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies. PMID:27617293

  13. Effect of initial material on the electrolytic parameters of field-effect transistors

    International Nuclear Information System (INIS)

    Antonov, A.V.; Sinitsyn, V.N.; Fursov, V.V.

    1978-01-01

    The effect of initial material parameters upon the main electric characteristics of field transistors at room and optimum (170 deg C) temperatures is studied. For that purpose, the values of parasitic resistances rsub(s), specific resistances rho and steepness S of field transistors, depending on temperature and electrical conditions were measured. The output volt-ampere characteristics of the transistors at room and optimum temperatures are given. An analysis of the results obtained permits to conclude that there is an unambiguous relationship between rho and rsub(s). Impact ionization is shown to occur for field transistors with lower rho at lower drain voltage. When manufacturing field transistors designed for operation at low temperatures, one should remember that a minimum rho may restrict maximum possible steepness. When designing field transistors with optimum noise characteristics, one should variate not only such material parameters as mobility and carrier density, but also select optimum geometry

  14. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  15. Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

    International Nuclear Information System (INIS)

    But, D. B.; Drexler, C.; Ganichev, S. D.; Sakhno, M. V.; Sizov, F. F.; Dyakonova, N.; Drachenko, O.; Gutin, A.; Knap, W.

    2014-01-01

    Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm 2 was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm 2 range. Nonlinearity followed by saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm 2 . The observed photoresponse nonlinearity is explained by nonlinearity and saturation of the transistor channel current. A theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitative experimental data both in linear and nonlinear regions. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orders of magnitudes of power densities (from ∼0.5 mW/cm 2 to ∼5 kW/cm 2 )

  16. Theoretical study on the combined systems of peanut-shaped carbon nanotubes encapsulated in single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Wang, Guo; Huang, Yuanhe

    2012-01-01

    Highlights: ► The combined systems of peanut-shaped carbon nanotubes encapsulated in single-walled carbon nanotubes are investigated. ► The band structures and related electronic properties are calculated by using crystal orbital method. ► The carrier mobility and mean free path are evaluated under the deformation potential theory. -- Abstract: The combined systems of peanut-shaped carbon nanotubes encapsulated in both semiconducting and metallic single-walled carbon nanotubes are investigated by using self-consistent field crystal orbital method based on the density functional theory. The investigation indicates that the interaction between the two constituents is mainly contributed by the π orbitals. The encapsulation does not change the semiconducting or metallic nature of the single-walled carbon nanotubes, but significantly changes the band dispersion and decreases the frontier band width of the metallic one. The carrier mobility and mean free path of the metallic single-walled carbon nanotube increase greatly after the encapsulation. The calculated mobilities have the order of 10 3 cm 2 V −1 s −1 for both of the semiconducting and metallic double-walled carbon nanotubes.

  17. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

    2017-08-15

    Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  18. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    Science.gov (United States)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  19. Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design

    International Nuclear Information System (INIS)

    Kennedy, E.J.; Alley, G.T.; Britton, C.L. Jr.; Skubic, P.L.; Gray, B.; Wu, A.

    1990-01-01

    Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

  20. Molecular materials for organic field-effect transistors

    International Nuclear Information System (INIS)

    Mori, T

    2008-01-01

    Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

  1. Functional materials based on carbon nanotubes: Carbon nanotube actuators and noncovalent carbon nanotube modification

    Science.gov (United States)

    Fifield, Leonard S.

    Carbon nanotubes have attractive inherent properties that encourage the development of new functional materials and devices based on them. The use of single wall carbon nanotubes as electromechanical actuators takes advantage of the high mechanical strength, surface area and electrical conductivity intrinsic to these molecules. The work presented here investigates the mechanisms that have been discovered for actuation of carbon nanotube paper: electrostatic, quantum chemical charge injection, pneumatic and viscoelastic. A home-built apparatus for the measurement of actuation strain is developed and utilized in the investigation. An optical fiber switch, the first demonstrated macro-scale device based on the actuation of carbon nanotubes, is described and its performance evaluated. Also presented here is a new general process designed to modify the surface of carbon nanotubes in a non-covalent, non-destructive way. This method can be used to impart new functionalities to carbon nanotube samples for a variety of applications including sensing, solar energy conversion and chemical separation. The process described involves the achievement of large degrees of graphitic surface coverage with polycyclic aromatic hydrocarbons through the use of supercritical fluids. These molecules are bifunctional agents that anchor a desired chemical group to the aromatic surface of the carbon nanotubes without adversely disrupting the conjugated backbone that gives rise the attractive electronic and physical properties of the nanotubes. Both the nanotube functionalization work and the actuator work presented here emphasize how an understanding and control of nanoscale structure and phenomena can be of vital importance in achieving desired performance for active materials. Opportunities for new devices with improved function over current state-of-the-art can be envisioned and anticipated based on this understanding and control.

  2. Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

    Science.gov (United States)

    Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

    2018-06-01

    Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

  3. Electric field confinement effect on charge transport in organic field-effect transistors

    NARCIS (Netherlands)

    Li, X.; Kadashchuk, A.; Fishchuk, I.I.; Smaal, W.T.T.; Gelinck, G.H.; Broer, D.J.; Genoe, J.; Heremans, P.; Bässler, H.

    2012-01-01

    While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low

  4. Near-field thermal radiation between hyperbolic metamaterials: Graphite and carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X. L.; Zhang, R. Z.; Zhang, Z. M., E-mail: zhuomin.zhang@me.gatech.edu [G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2013-11-18

    The near-field radiative heat transfer for two hyperbolic metamaterials, namely, graphite and vertically aligned carbon nanotubes (CNTs), is investigated. Graphite is a naturally existing uniaxial medium, while CNT arrays can be modeled as an effective anisotropic medium. Different hyperbolic modes can be separately supported by these materials in certain infrared regions, resulting in a strong enhancement in near-field heat transfer. It is predicted that the heat flux between two CNT arrays can exceed that between SiC plates at any vacuum gap distance and is about 10 times higher with a 10 nm gap.

  5. Mechanical properties of carbon nanotubes

    Science.gov (United States)

    Salvetat, J.-P.; Bonard, J.-M.; Thomson, N. H.; Kulik, A. J.; Forró, L.; Benoit, W.; Zuppiroli, L.

    A variety of outstanding experimental results on the elucidation of the elastic properties of carbon nanotubes are fast appearing. These are based mainly on the techniques of high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM) to determine the Young's moduli of single-wall nanotube bundles and multi-walled nanotubes, prepared by a number of methods. These results are confirming the theoretical predictions that carbon nanotubes have high strength plus extraordinary flexibility and resilience. As well as summarising the most notable achievements of theory and experiment in the last few years, this paper explains the properties of nanotubes in the wider context of materials science and highlights the contribution of our research group in this rapidly expanding field. A deeper understanding of the relationship between the structural order of the nanotubes and their mechanical properties will be necessary for the development of carbon-nanotube-based composites. Our research to date illustrates a qualitative relationship between the Young's modulus of a nanotube and the amount of disorder in the atomic structure of the walls. Other exciting results indicate that composites will benefit from the exceptional mechanical properties of carbon nanotubes, but that the major outstanding problem of load transfer efficiency must be overcome before suitable engineering materials can be produced.

  6. Field emission of carbon nanotubes grown on nickel substrate

    International Nuclear Information System (INIS)

    Hu Yemin; Huo Kaifu; Chen Hong; Lu Yinong; Xu Li; Hu Zheng; Chen Yi

    2006-01-01

    Carbon nanotubes (CNTs) have been synthesized directly on the electrically conducting nickel substrate without additional catalyst. Field emission properties of the as-prepared sample were characterized using parallel plate diode configurations. It was observed that the field emission qualitatively follows the conventional Fowler-Nordheim (F-N) theory from the straight line of ln(I/V 2 ) versus 1/V plot at the high applied field region. The uniformity and stability of the electron emission have also been examined. The low electron turn-on field (E to ) and high emission current density indicates the potential applications of this new CNT-based emitter

  7. Ambipolar charge transport in organic field-effect transistors

    NARCIS (Netherlands)

    Smits, E.C.P.; Anthopoulos, T.D.; Setayesh, S.; Veenendaal, van E.; Coehoorn, R.; Blom, P.W.M.; Boer, de B.; Leeuw, de D.M.

    2006-01-01

    A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate

  8. Carbon nanotubes for biological and biomedical applications

    International Nuclear Information System (INIS)

    Yang Wenrong; Thordarson, Pall; Gooding, J Justin; Ringer, Simon P; Braet, Filip

    2007-01-01

    Ever since the discovery of carbon nanotubes, researchers have been exploring their potential in biological and biomedical applications. The recent expansion and availability of chemical modification and bio-functionalization methods have made it possible to generate a new class of bioactive carbon nanotubes which are conjugated with proteins, carbohydrates, or nucleic acids. The modification of a carbon nanotube on a molecular level using biological molecules is essentially an example of the 'bottom-up' fabrication principle of bionanotechnology. The availability of these biomodified carbon nanotube constructs opens up an entire new and exciting research direction in the field of chemical biology, finally aiming to target and to alter the cell's behaviour at the subcellular or molecular level. This review covers the latest advances of bio-functionalized carbon nanotubes with an emphasis on the development of functional biological nano-interfaces. Topics that are discussed herewith include methods for biomodification of carbon nanotubes, the development of hybrid systems of carbon nanotubes and biomolecules for bioelectronics, and carbon nanotubes as transporters for a specific delivery of peptides and/or genetic material to cells. All of these current research topics aim at translating these biotechnology modified nanotubes into potential novel therapeutic approaches. (topical review)

  9. Recent progress in photoactive organic field-effect transistors.

    Science.gov (United States)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-04-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  10. Recent progress in photoactive organic field-effect transistors

    International Nuclear Information System (INIS)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-01-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts. (review)

  11. Electronic Detection of Lectins Using Carbohydrate Functionalized Nanostructures: Graphene versus Carbon Nanotubes

    Science.gov (United States)

    Chen, Yanan; Vedala, Harindra; Kotchey, Gregg P.; Audfray, Aymeric; Cecioni, Samy; Imberty, Anne; Vidal, Sébastien; Star, Alexander

    2012-01-01

    Here we investigated the interactions between lectins and carbohydrates using field-effect transistor (FET) devices comprised of chemically converted graphene (CCG) and single-walled carbon nanotubes (SWNTs). Pyrene- and porphyrin-based glycoconjugates were functionalized noncovalently on the surface of CCG-FET and SWNT-FET devices, which were then treated with 2 µM of nonspecific and specific lectins. In particular, three different lectins (PA-IL, PA-IIL and ConA) and three carbohydrate epitopes (galactose, fucose and mannose) were tested. The responses of 36 different devices were compared and rationalized using computer-aided models of carbon nanostructure/glycoconjugate interactions. Glycoconjugates surface coverage in addition to one-dimensional structures of SWNTs resulted in optimal lectin detection. Additionally, lectin titration data of SWNT- and CCG-based biosensors were used to calculate lectin dissociation constants (Kd) and compare them to the values obtained from the isothermal titration microcalorimetry (ITC) technique. PMID:22136380

  12. Factors determining properties of multi-walled carbon nanotubes/fibres deposited by PECVD

    International Nuclear Information System (INIS)

    Bell, M S; Teo, K B K; Milne, W I

    2007-01-01

    This paper presents a number of factors which have been found to be important to the growth of carbon nanotubes and nanofibres by plasma enhanced chemical vapour deposition. The effect of the electric field in a plasma discharge on nanotube growth is investigated and shown to be important in achieving nanotube alignment. The use of a plasma discharge also enables deposition to take place at lower temperatures, facilitating the use of substrates which would otherwise be damaged. The effect of varying the ratio of carbon feedstock gas to etchant gas is investigated and the ratio is shown to be important for controlling the shape of deposited nanostructures. The effects of varying plasma power are investigated, showing that greater plasma power results in a lower growth rate. Higher levels of plasma power are also shown to cause the sidewalls of deposited carbon nanotubes to be etched. Finally, the growth rate of carbon nanotubes and nanofibres is shown to depend upon the strength of the local electric field. It is proposed that a higher field causes greater ionization within the plasma, which results in a higher growth rate. This is borne out by comparing simulation results with experimental observations

  13. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  14. The effect of surface modifications of carbon nanotubes on the electrical properties of inkjet-printed SWNT/PEDOT-PSS composite line patterns

    International Nuclear Information System (INIS)

    Najeeb, C K; Lee, Jae-Hyeok; Chang, Jingbo; Kim, Jae-Ho

    2010-01-01

    We prepared nanocomposite inks of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) filled with single-walled carbon nanotubes (SWNTs) purified by acidic treatment, carboxylated by chemical oxidation and carboxyl-functionalized nanotubes physically modified with a natural gum, gum arabic. Inkjet printing of line patterns with a feature size of 100 μm width and lengths ranging from 1 to 5 cm was performed on glass substrates with a piezoelectric inkjet printer. The carboxyl-functionalized SWNT-based composite demonstrated a significant decrease (fourfold) of electrical resistance for the line patterns compared to that with a purified CNT-based composite due to improved dispersability of nanotubes in the polymer matrix. The use of gum arabic for the dispersion of carboxyl-functionalized nanotubes demonstrated a further drastic decrease (18-fold) of the resistance compared with a purified CNT-based composite owing to the formation of an extended continuous network within the line pattern. The inkjet-printed conductive patterns can be applied in various fields, such as flexible high speed transistors, high efficiency solar cells and transparent electrodes.

  15. Physically unclonable cryptographic primitives using self-assembled carbon nanotubes

    Science.gov (United States)

    Hu, Zhaoying; Comeras, Jose Miguel M. Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S.; Hannon, James B.; Liehr, Michael; Han, Shu-Jen

    2016-06-01

    Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

  16. The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube-silicon solar cells.

    Science.gov (United States)

    Stolz, Benedikt W; Tune, Daniel D; Flavel, Benjamin S

    2016-01-01

    Recent results in the field of carbon nanotube-silicon solar cells have suggested that the best performance is obtained when the nanotube film provides good coverage of the silicon surface and when the nanotubes in the film are aligned parallel to the surface. The recently developed process of dry shear aligning - in which shear force is applied to the surface of carbon nanotube thin films in the dry state, has been shown to yield nanotube films that are very flat and in which the surface nanotubes are very well aligned in the direction of shear. It is thus reasonable to expect that nanotube films subjected to dry shear aligning should outperform otherwise identical films formed by other processes. In this work, the fabrication and characterisation of carbon nanotube-silicon solar cells using such films is reported, and the photovoltaic performance of devices produced with and without dry shear aligning is compared.

  17. Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Steve [Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034 (United States); Nam, Ji Hyun [Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505 (United States); Koo, Ja Hoon; Lei, Ting; Bao, Zhenan, E-mail: zbao@stanford.edu [Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145 (United States)

    2015-03-09

    We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

  18. Effect of interwall interaction on the electronic structure of double-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Soto, M; Boyer, T A; Biradar, S; Ge, L; Vajtai, R; Ajayan, P M; Barrera, E V; Elías-Zúñiga, A

    2015-01-01

    Through this study, the results of density functional theory calculations within the local density approximation of the electronic structure of zigzag–zigzag double-walled carbon nanotubes (DWCNTs), with chiral indices (n, 0)@(m, 0) for n = 7–15, and m = 15–26, has been presented and the effects of interwall interaction and orbital hybridization on the electronic structure of these systems has been discussed. It was observed that the electronic band gap of the aforementioned DWCNTs depends on the interwall distance only for metallic–semiconductor configurations and on the intrinsic properties of the constituent tubes in all other combinations. It was also observed that the calculated band gap for most of the metallic–metallic DWCNTs was smaller than semiconductor–metallic, metallic–semiconductor, and semiconductor–semiconductor configurations. Metallic–semiconductor DWCNTs were found to be desirable for band gap tuning applications because of their dependence on interwall distance, opening up the possibility of using such systems in electronic device applications, such as transistors. Other applications include the use of DWCNTs in macroscopic carbon nanotube conducting wires, for which metallic–metallic and semiconducting–metallic zigzag–zigzag DWCNTs were found to be the most desirable configurations due to their small band gaps. (paper)

  19. Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

    Science.gov (United States)

    Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

    2017-09-01

    Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

  20. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  1. Enhanced field emission from carbon nanotubes by hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Zhi, C.Y.; Bai, X.D.; Wang, E.G.

    2002-01-01

    The field emission capability of the carbon nanotubes (CNTs) has been improved by hydrogen plasma treatment, and the enhanced emission mechanism has been studied systematically using Fourier-transform infrared spectroscopy, Raman, and transmission electron microscopy. The hydrogen concentration in the samples increases with increasing plasma treatment duration. A C δ- -H δ+ dipole layer may form on CNTs' surface and a high density of defects results from the plasma treatment, which is likely to make the external surface of CNTs more active to emit electrons after treatment. In addition, the sharp edge of CNTs' top, after removal of the catalyst particles, may increase the local electronic field more effectively. The present study suggests that hydrogen plasma treatment is a useful method for improving the field electron emission property of CNTs

  2. Carbon nanotube based stationary phases for microchip chromatography

    DEFF Research Database (Denmark)

    Mogensen, Klaus Bo; Kutter, Jörg Peter

    2012-01-01

    already been demonstrated in more classical formats, for improved separation performance in gas and liquid chromatography, and for unique applications in solid phase extraction. Carbon nanotubes are now also entering the field of microfluidics, where there is a large potential to be able to provide......The objective of this article is to provide an overview and critical evaluation of the use of carbon nanotubes and related carbon-based nanomaterials for microchip chromatography. The unique properties of carbon nanotubes, such as a very high surface area and intriguing adsorptive behaviour, have...... integrated, tailor-made nanotube columns by means of catalytic growth of the nanotubes inside the fluidic channels. An evaluation of the different implementations of carbon nanotubes and related carbon-based nanomaterials for microfluidic chromatography devices is given in terms of separation performance...

  3. Organic semiconductors for organic field-effect transistors

    International Nuclear Information System (INIS)

    Yamashita, Yoshiro

    2009-01-01

    The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed. (topical review)

  4. Organic semiconductors for organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yoshiro Yamashita

    2009-01-01

    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  5. Carbon nanotubes in an inhomogeneous transverse magnetic field: exactly solvable model

    Czech Academy of Sciences Publication Activity Database

    Jakubský, Vít; Kuru, S.; Negro, J.

    2014-01-01

    Roč. 47, č. 11 (2014), s. 115307 ISSN 1751-8113 R&D Projects: GA AV ČR GPP203/11/P038 Institutional support: RVO:61389005 Keywords : carbon nanotubes * dirac equation * magnetic field * finite-gap system Subject RIV: BE - Theoretical Physics Impact factor: 1.583, year: 2014

  6. Carbon Nanotube Conditioning: Ab Initio Simulations of the Effect of Interwall Interaction, Defects And Doping on the Electronic Properties of Carbon Nanotubes

    Science.gov (United States)

    Castillo, Matias Soto

    Using carbon nanotubes for electrical conduction applications at the macroscale has been shown to be a difficult task for some time now, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present in bundles grown by current state-of-the-art reactors, so that the electrical conduction of a bundle or even wire may be enhanced. In our work, we have used first-principles density functional theory calculations to study the effect of interwall interaction, defects and doping on the electronic structure of metallic, semi-metal and semiconducting single- and double-walled carbon nanotubes in order to gain a clear picture of their properties. The electronic band gap for a range of zigzag single-walled carbon nanotubes with chiral indices (5,0) - (30,0) was obtained. Their properties were used as a stepping stone in the study of the interwall interaction in double-walled carbon nanotubes, from which it was found that the electronic band gap depends on the type of inner and outer tubes, average diameter, and interwall distance. The effect of vacancy defects was also studied for a range of single-walled carbon nanotubes. It was found that the electronic band gap is reduced for the entire range of zigzag carbon nanotubes, even at vacancy defects concentrations of less than 1%. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics of the adsorption doping of diatomic iodine. An ideal adsorption site

  7. Quantum size effect and thermal stability of carbon-nanotube-based quantum dot

    International Nuclear Information System (INIS)

    Huang, N.Y.; Peng, J.; Liang, S.D.; Li, Z.B.; Xu, N.S.

    2004-01-01

    Full text: Based on semi-experience quantum chemical calculation, we have investigated the quantum size effect and thermal stability of open-end carbon nanotube (5, 5) quantum dots of 20 to 400 atoms. It was found that there is a gap in the energy band of all carbon nanotube (5, 5) quantum dots although a (5, 5) carbon nanotube is metallic. The energy gap of quantum dots is much dependent of the number of atoms in a dot, as a result of the quantization rules imposed by the finite scales in both radial and axial directions of a carbon nanotube quantum dot. Also, the heat of formation of carbon nanotube quantum dots is dependent of the size of a quantum dot. (author)

  8. Dielectrophoretic assembly of carbon nanotube devices

    DEFF Research Database (Denmark)

    Dimaki, Maria

    The purpose of this project has been to assemble single-walled carbon nanotubes on electrodes at the tip of a biocompatible cantilever and use these for chemical species sensing in air and liquid, for example in order to measure the local activity from ion channels in the cell membrane....... The electrical resistance of carbon nanotubes has been shown to be extremely sensitive to gas molecules. Dielectrophoresis is a method capable of quickly attracting nanotubes on microelectrodes by using an electric field, thus enabling nanotube integration in microsystems. Dielectrophoresis offers also....... A model for the dielectrophoretic assembly of carbon nanotubes on microelectrodes was developed and several simulations were conducted using values from the available literature for the various key parameters. The model can give qualitative results regarding the parameters dominating the dielectrophoretic...

  9. EDITORIAL: Focus on Carbon Nanotubes

    Science.gov (United States)

    2003-09-01

    The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau, P Umek, K Hernadi, P Marcoux, B Lukic, Cs Mikó, M Milas, R Gaál and L Forró Transitional behaviour in the transformation from active end

  10. Thermal effect on transverse vibrations of double-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Zhang, Y Q; Liu, X; Liu, G R

    2007-01-01

    Based on the theory of thermal elasticity mechanics, a double-elastic beam model is developed for transverse vibrations of double-walled carbon nanotubes with large aspect ratios. The thermal effect is incorporated in the formulation. With this double-elastic beam model, explicit expressions are derived for natural frequencies and associated amplitude ratios of the inner to the outer tubes for the case of simply supported double-walled carbon nanotubes. The influence of temperature change on the properties of transverse vibrations is discussed. It is demonstrated that some properties of transverse vibrations of double-walled carbon nanotubes are dependent on the change of temperature

  11. Stable magnetization of iron filled carbon nanotube MFM probes in external magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Wolny, Franziska; Weissker, Uhland; Muehl, Thomas; Lutz, Matthias U; Mueller, Christian; Leonhardt, Albrecht; Buechner, Bernd, E-mail: f.wolny@ifw-dresden.d [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Helmholtzstrasse 20, 01069 Dresden (Germany)

    2010-01-01

    We present results on the application of an iron filled carbon nanotube (Fe-CNT) as a probe for magnetic force microscopy (MFM) in an external magnetic field. If an external field is applied parallel to the sample surface, conventional ferromagnetically coated MFM probes often have the disadvantage that the magnetization of the coating turns towards the direction of the applied field. Then it is difficult to distinguish the effect of the external field on the sample from those on the MFM probe. The Fe-CNT MFM probe has a large shape anisotropy due to the high aspect ratio of the enclosed iron nanowire. Thanks to this the direction of the magnetization stays mainly oriented along the long nanotube axis in in-plane fields up to our experimental limit of 250 mT. Thus, the quality of the MFM images remains unchanged. Apart from this, it is shown that Fe-CNT MFM probe yields a very good magnetic resolution of about 25 nm due to the small diameter of the iron filling.

  12. Carbon nanotubes and graphene towards soft electronics

    Science.gov (United States)

    Chae, Sang Hoon; Lee, Young Hee

    2014-04-01

    Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising due to outstanding elastic properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon. The uniqueness of these nano-carbon materials has opened new possibilities for soft electronics, which is another technological trend in the market. This review covers the recent progress of soft electronics research based on CNTs and graphene. We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). In addition to discussing state of the art performance metrics, we also attempt to clarify trade-off issues and methods to control the trade-off on/off versus mobility). We further demonstrate accomplishments of the CNT network in flexible integrated circuits on plastic substrates that have attractive characteristics. A future research direction is also proposed to overcome current technological obstacles necessary to realize commercially feasible soft electronics.

  13. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  14. Nitrogen-doping effects on the growth, structure and electrical performance of carbon nanotubes obtained by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Ionescu, Mihnea Ioan; Zhang Yong; Li Ruying [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON N6A 5B9 (Canada); Abou-Rachid, Hakima [Defense Research and Development Canada - Valcartier, 2459 Boulevard PieXI Nord, Quebec, QC G3J 1X5 (Canada); Sun Xueliang, E-mail: xsun@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON N6A 5B9 (Canada)

    2012-03-01

    Vertically aligned nitrogen-doped carbon nanotubes (CNTs) with modulated nitrogen content have been synthesized in a large scale by using spray pyrolysis chemical vapor deposition technique. The effects of nitrogen doping on the growth, structure and electrical performance of carbon nanotubes have been systematically examined. Field emission scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman techniques have been employed to characterize the morphology, composition, and vibrational properties of nanotubes. The results indicate that the nitrogen incorporation significantly influences the growth rate, morphology, size and structure of nanotubes. Electrical measurement investigation of the nanotubes indicates that the change in electrical resistance increases with temperature and pressure as the nitrogen concentration increases inside the tubes. This work presents a versatile, safe, and easy way to scale up route of growing carbon nanotubes with controlled nitrogen content and modulated structure, and may provide an insight in developing various nitrogen-doped carbon-based nanodevices.

  15. Carbon nanotube conditioning: ab initio simulations of the effect of defects and doping on the electronic properties of carbon nanotube systems.

    Science.gov (United States)

    Soto, Matias; Barrera, Enrique

    Using carbon nanotubes for electrical conduction applications at the macroscale has proven to be a difficult task, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route and the topic of this work is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present, so that the electrical conduction of a bundle or even wire may be enhanced. We used density functional theory calculations to study the effect of defects and doping on the electronic structure of metallic, semi-metal and semiconducting carbon nanotubes in order to gain a clear picture of their properties. Additionally, using dopants to increase the conductance across a junction between two carbon nanotubes was studied for different configurations. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics. Partial funding was received from CONACyT Scholarship 314419.

  16. Enhanced transconductance in a double-gate graphene field-effect transistor

    Science.gov (United States)

    Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

    2018-03-01

    Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

  17. Effect of Longitudinal Magnetic Field on Vibration Characteristics of Single-Walled Carbon Nanotubes in a Viscoelastic Medium

    Science.gov (United States)

    Zhang, D. P.; Lei, Y.; Shen, Z. B.

    2017-12-01

    The effect of longitudinal magnetic field on vibration response of a sing-walled carbon nanotube (SWCNT) embedded in viscoelastic medium is investigated. Based on nonlocal Euler-Bernoulli beam theory, Maxwell's relations, and Kelvin viscoelastic foundation model, the governing equations of motion for vibration analysis are established. The complex natural frequencies and corresponding mode shapes in closed form for the embedded SWCNT with arbitrary boundary conditions are obtained using transfer function method (TFM). The new analytical expressions for the complex natural frequencies are also derived for certain typical boundary conditions and Kelvin-Voigt model. Numerical results from the model are presented to show the effects of nonlocal parameter, viscoelastic parameter, boundary conditions, aspect ratio, and strength of the magnetic field on vibration characteristics for the embedded SWCNT in longitudinal magnetic field. The results demonstrate the efficiency of the proposed methods for vibration analysis of embedded SWCNTs under magnetic field.

  18. Using hydrocarbon as a carbon source for synthesis of carbon nanotube by electric field induced needle-pulsed plasma

    International Nuclear Information System (INIS)

    Kazemi Kia, Kaveh; Bonabi, Fahimeh

    2013-01-01

    In this work different hydrocarbons are used as the carbon source, in the production of carbon nanotubes (CNTs) and nano onions. An electric field induced needle pulse arc-discharge reactor is used. The influence of starting carbon on the synthesis of CNTs is investigated. The production efficiency is compared for Acetone, Isopropanol and Naphthalene as simple hydrocarbons. The hydrocarbons are preheated and then pretreated by electric field before being exposed to plasma. The hydrocarbon vapor is injected into plasma through a graphite spout in the cathode assembly. The pulsed plasma takes place between two graphite rods while a strong electric field has been already established alongside the electrodes. The pulse width is 0.3 μs. Mechanism of precursor decomposition is discussed by describing three forms of energy that are utilized to disintegrate the precursor molecules: thermal energy, electric field and kinetic energy of plasma. Molecular polarity of a hydrocarbon is one of the reasons for choosing carbon raw material as a precursor in an electric field induced low power pulsed-plasma. The results show that in order to obtain high quality carbon nanotubes, Acetone is preferred to Isopropanol and Naphthalene. Scanning probe microscopy techniques are used to investigate the products. - Highlights: • We synthesized CNTs (carbon nano tubes) by needle pulsed plasma. • We use different hydrocarbons as carbon source in the production of CNTs. • We investigated the influence of starting carbon on the synthesis of CNTs. • Thermal energy, electric field and kinetic energy are used to break carbon bonds. • Polar hydrocarbon molecules are more efficient than nonpolar ones in production

  19. Research of the voltage and current stabilization processes by using the silicon field-effect transistor

    International Nuclear Information System (INIS)

    Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

    2012-01-01

    The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

  20. Carbon nanotube nanoelectrode arrays

    Science.gov (United States)

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  1. Deformable Organic Nanowire Field-Effect Transistors.

    Science.gov (United States)

    Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

    2018-02-01

    Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

    Science.gov (United States)

    Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

    2015-09-22

    This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

  3. Novel strategy for diameter-selective separation and functionalization of single-wall carbon nanotubes.

    Science.gov (United States)

    Tromp, R M; Afzali, A; Freitag, M; Mitzi, D B; Chen, Zh

    2008-02-01

    The problem of separating single-wall carbon nanotubes (CNTs) by diameter and/or chirality is one of the greatest impediments toward the widespread application of these promising materials in nanoelectronics. In this paper, we describe a novel physical-chemical method for diameter-selective CNT separation that is both simple and effective and that allows up-scaling to large volumes at modest cost. Separation is based on size-selective noncovalent matching of an appropriate anchor molecule to the wall of the CNT, enabling suspension of the CNTs in solvents in which they would otherwise not be soluble. We demonstrate size-selective separation in the 1-2 nm diameter range using easily synthesized oligo-acene adducts as a diameter-selective molecular anchor. CNT field effect transistors fabricated from diameter-selected CNTs show markedly improved electrical properties as compared to nonselected CNTs.

  4. Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

    Science.gov (United States)

    Sun, Yonghai; Yeow, John T W; Jaffray, David A

    2013-10-25

    A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Effect of magnetic field on thermal conductivity and viscosity of a magnetic nanofluid loaded with carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Shahsavar, Amin [Kermanshah University of Technology, Kermanshah (Iran, Islamic Republic of); Salimpour, Mohammad Reza; Saghafian, Mohsen [Isfahan University of Technology, Isfahan (Iran, Islamic Republic of); Shafii, M. B. [Sharif University of Technology, Tehran(Iran, Islamic Republic of)

    2016-02-15

    The present work examines experimentally the effect of magnetic field on the viscosity and thermal conductivity of a hybrid nanofluid containing tetramethylammonium hydroxide (TMAH) coated Fe{sub 3}O{sub 4} nanoparticles and Gum arabic (GA) coated carbon nanotubes (CNTs). The hybrid nanofluid was prepared by using ultrasonic dispersion method. Magnetic field was created by a pair of spaced apart magnet plates. The effect of temperature on the time variation of thermal conductivity under applied magnetic field was also investigated. According to the results of this study, viscosity of the hybrid nanofluid increases with the strength of magnetic field, while it decreases with the increase of temperature. Additionally, it is found that the hybrid nanofluid behaves as a shear thinning fluid at low shear rates while it exhibits Newtonian behavior at high shear rates. Furthermore, results show that when an external magnetic field is applied to the studied magnetic nanofluids, the thermal conductivity experiences a peak.

  6. Yb:KYW planar waveguide laser Q-switched by evanescent-field interaction with carbon nanotubes

    NARCIS (Netherlands)

    Kim, Jun Wan; Choi, Sun Young; Yeom, Dong-Il; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Rotermund, Fabian

    2013-01-01

    We report Q-switched operation of a planar waveguide laser by evanescent-field interaction with single-walled carbon nanotubes deposited on top of the waveguide. The saturable-absorber-integrated gain medium, which operates based on evanescent-field interaction, enables the realization of a

  7. Electron field emission characteristics of graphene/carbon nanotubes hybrid field emitter

    International Nuclear Information System (INIS)

    Chen, Leifeng; He, Hong; Yu, Hua; Cao, Yiqi; Lei, Da; Menggen, QiQiGe; Wu, Chaoxing; Hu, Liqin

    2014-01-01

    The graphene (GP) and multi-walled carbon nanotubes (MCNTs) hybrid nanostructure emitter was constructed by a larger scale electrophoretic deposition (EPD) method. The field emission (FE) performance of the hybrid emitter is greatly improved compared with that of only GP or MCNTs emitter. The low turn-on electric field (EF), the low threshold EF and the reliability FE properties are obtained from the hybrid emitter. The better FE properties result from the improved electrical properties. For further enhancement FE of hybrids, Ag Nanoparticles (NPs) were decorated on the hybrids and FE characteristics were also studied. These studies indicate that we can use the hybrid nanostructure to improve conductivity and contact resistance, which results in enhancement of the FE properties

  8. Uniformity of fully gravure printed organic field-effect transistors

    International Nuclear Information System (INIS)

    Hambsch, M.; Reuter, K.; Stanel, M.; Schmidt, G.; Kempa, H.; Fuegmann, U.; Hahn, U.; Huebler, A.C.

    2010-01-01

    Fully mass-printed organic field-effect transistors were made completely by means of gravure printing. Therefore a special printing layout was developed in order to avoid register problems in print direction. Upon using this layout, contact pads for source-drain electrodes of the transistors are printed together with the gate electrodes in one and the same printing run. More than 50,000 transistors have been produced and by random tests a yield of approximately 75% has been determined. The principle suitability of the gravure printed transistors for integrated circuits has been shown by the realization of ring oscillators.

  9. Continuous carbon nanotube reinforced composites.

    Science.gov (United States)

    Ci, L; Suhr, J; Pushparaj, V; Zhang, X; Ajayan, P M

    2008-09-01

    Carbon nanotubes are considered short fibers, and polymer composites with nanotube fillers are always analogues of random, short fiber composites. The real structural carbon fiber composites, on the other hand, always contain carbon fiber reinforcements where fibers run continuously through the composite matrix. With the recent optimization in aligned nanotube growth, samples of nanotubes in macroscopic lengths have become available, and this allows the creation of composites that are similar to the continuous fiber composites with individual nanotubes running continuously through the composite body. This allows the proper utilization of the extreme high modulus and strength predicted for nanotubes in structural composites. Here, we fabricate such continuous nanotube polymer composites with continuous nanotube reinforcements and report that under compressive loadings, the nanotube composites can generate more than an order of magnitude improvement in the longitudinal modulus (up to 3,300%) as well as damping capability (up to 2,100%). It is also observed that composites with a random distribution of nanotubes of same length and similar filler fraction provide three times less effective reinforcement in composites.

  10. All carbon nanotubes are not created equal

    International Nuclear Information System (INIS)

    Geohegan, David B.; Puretzky, Alexander A.; Rouleau, Christopher M.

    2010-01-01

    This chapter presents the various factors that enter into consideration when choosing the source of carbon nanotubes for a specific application. Carbon nanotubes are giant molecules made of pure carbon. They have captured the imagination of the scientific community by the unique structure that provides superior physical, chemical, and electrical properties. However, a surprisingly wide disparity exists between the intrinsic properties determined under ideal conditions and the properties that carbon nanotubes exhibit in real world situations. The lack of uniformity in carbon nanotube properties is likely to be the main obstacle holding back the development of carbon nanotube applications. This tutorial addresses the nonuniformity of carbon nanotube properties from the synthesis standpoint. This synthesis-related nonuniformity is on top of the intrinsic chirality distribution that gives the ∼1:2 ratio of metallic to semiconducting nanotubes. From the standpoint of carbon bonding chemistry the variation in the quality and reproducibility of carbon nanotube materials is not unexpected. It is an intrinsic feature that is related to the metastability of carbon structures. The extent to which this effect is manifested in carbon nanotube formation is governed by the type and the kinetics of the carbon nanotube synthesis reaction. Addressing this variation is critical if nanotubes are to live up to the potential already demonstrated by their phenomenal physical properties.

  11. Direct integration of carbon nanotubes in Si microstructures

    International Nuclear Information System (INIS)

    Aasmundtveit, Knut E; Ta, Bao Q; Halvorsen, Einar; Hoivik, Nils; Lin, Liwei

    2012-01-01

    In this paper we present a low-cost, room-temperature process for integrating carbon nanotubes on Si microsystems. The process uses localized resistive heating by controlling current through suspended microbridges, to provide local temperatures high enough for CVD growth of carbon nanotubes. Locally grown carbon nanotubes make electrical connections through guidance by electric fields, thus eventually making circuits. The process is scalable to a wafer level batch process. Furthermore, it is controlled electrically, thus enabling automated control. Direct integration of carbon nanotubes in microstructures has great promise for nano-functional devices, such as ultrasensitive chemical sensors. Initial measurements demonstrate the Si–carbon nanotube–Si circuit's potential as a NH 3 sensor. (paper)

  12. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  13. A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.

    Science.gov (United States)

    Huang, Jun; Somu, Sivasubramanian; Busnaina, Ahmed

    2012-08-24

    We report a simple, bottom-up/top-down approach for integrating drastically different nanoscale building blocks to form a heterogeneous complementary inverter circuit based on layered molybdenum disulfide and carbon nanotube (CNT) bundles. The fabricated CNT/MoS(2) inverter is composed of n-type molybdenum disulfide (MOS(2)) and p-type CNT transistors, with a high voltage gain of 1.3. The CNT channels are fabricated using directed assembly while the layered molybdenum disulfide channels are fabricated by mechanical exfoliation. This bottom-up fabrication approach for integrating various nanoscale elements with unique characteristics provides an alternative cost-effective methodology to complementary metal-oxide-semiconductors, laying the foundation for the realization of high performance logic circuits.

  14. Synthesis and characterization of carbon nanotubes

    Science.gov (United States)

    Ritschel, Manfred; Bartsch, Karl; Leonhardt, Albrecht; Graff, Andreas; Täschner, Christine; Fink, Jörg

    2001-11-01

    The catalytic chemical vapor deposition (CCVD) is a very promising process with respect to large scale production of different kinds of carbon nanostructures. By modifying the deposition temperature, the catalyst material and the hydrocarbon nanofibers with herringbone structure, multi-walled nanotubes with tubular structure and single-walled nanotubes were deposited. Furthermore, layers of aligned multi-walled nanotubes could be obtained on oxidized silicon substrates coated with thin sputtered metal layers (Co, permalloy) as well as onto WC-Co hardmetals by using the microwave assisted plasma CVD process (MWCVD). The obtained carbon modifications were characterized by scanning (SEM) and transmission (TEM) electron microscopy. The hydrogen storage capability of the nanofibers and nanotubes and the electron field emission of the nanotube layers was investigated.

  15. An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications

    Directory of Open Access Journals (Sweden)

    Elnaz Akbari

    2014-05-01

    Full Text Available Carbon, in its variety of allotropes, especially graphene and carbon nanotubes (CNTs, holds great potential for applications in variety of sensors because of dangling π-bonds that can react with chemical elements. In spite of their excellent features, carbon nanotubes (CNTs and graphene have not been fully exploited in the development of the nanoelectronic industry mainly because of poor understanding of the band structure of these allotropes. A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. NH3 has been used as the prototype gas to be detected by the nanosensor and the corresponding current–voltage (I–V characteristics of the FET-based sensor are studied. A graphene-based gas sensor model is also developed. The results from graphene and CNT models are compared with the experimental data. A satisfactory agreement, within the uncertainties of the experiments, is obtained. Graphene-based gas sensor exhibits higher conductivity compared to that of CNT-based counterpart for similar ambient conditions.

  16. An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH3 gas sensor applications.

    Science.gov (United States)

    Akbari, Elnaz; Arora, Vijay Kumar; Enzevaee, Aria; Ahmadi, Mohamad T; Saeidmanesh, Mehdi; Khaledian, Mohsen; Karimi, Hediyeh; Yusof, Rubiyah

    2014-01-01

    Carbon, in its variety of allotropes, especially graphene and carbon nanotubes (CNTs), holds great potential for applications in variety of sensors because of dangling π-bonds that can react with chemical elements. In spite of their excellent features, carbon nanotubes (CNTs) and graphene have not been fully exploited in the development of the nanoelectronic industry mainly because of poor understanding of the band structure of these allotropes. A mathematical model is proposed with a clear purpose to acquire an analytical understanding of the field-effect-transistor (FET) based gas detection mechanism. The conductance change in the CNT/graphene channel resulting from the chemical reaction between the gas and channel surface molecules is emphasized. NH3 has been used as the prototype gas to be detected by the nanosensor and the corresponding current-voltage (I-V) characteristics of the FET-based sensor are studied. A graphene-based gas sensor model is also developed. The results from graphene and CNT models are compared with the experimental data. A satisfactory agreement, within the uncertainties of the experiments, is obtained. Graphene-based gas sensor exhibits higher conductivity compared to that of CNT-based counterpart for similar ambient conditions.

  17. Nitrotyrosine adsorption on carbon nanotube: a density functional theory study

    Science.gov (United States)

    Majidi, R.; Karami, A. R.

    2014-05-01

    We have studied the effect of nitrotyrosine on electronic properties of different single-wall carbon nanotubes by density functional theory. Optimal adsorption configurations of nitrotyrosine adsorbed on carbon nanotube have been determined by calculation of adsorption energy. Adsorption energies indicate that nitrotyrosine is chemisorbed on carbon nanotubes. It is found that the nitrotyrosine adsorption modifies the electronic properties of the semiconducting carbon nanotubes significantly and these nanotubes become n-type semiconductors, while the effect of nitrotyrosine on metallic carbon nanotubes is not considerable and these nanotubes remain metallic. Results clarify sensitivity of carbon nanotubes to nitrotyrosine adsorption and suggest the possibility of using carbon nanotubes as biosensor for nitrotyrosine detection.

  18. Multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) composite films for transistor and inverter devices.

    Science.gov (United States)

    Yun, Dong-Jin; Hong, KiPyo; Kim, Se hyun; Yun, Won-Min; Jang, Jae-young; Kwon, Woo-Sung; Park, Chan-Eon; Rhee, Shi-Woo

    2011-01-01

    Highly conductive multiwalled carbon nanotube (MWNT)/Poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) films were prepared by spin coating a mixture solution. The solution was prepared by dispersing MWNT in the PEDOT:PSS solution in water using ultrasonication without any oxidation process. The effect of the MWNT loading in the solution on the film properties such as surface roughness, work function, surface energy, optical transparency, and conductivity was studied. The conductivity of MWNT/PEDOT:PSS composite film was increased with higher MWNT loading and the high conductivity of MWNT/PEDOT:PSS films enabled them to be used as a source/drain electrode in organic thin film transistor (OTFT). The pentacene TFT with MWNT/PEDOT:PSS S/D electrode showed much higher performance with mobility about 0.2 cm²/(V s) and on/off ratio about 5 × 10⁵ compared to that with PEDOT:PSS S/D electrode (∼0.05 cm²/(V s), 1 × 10⁵). The complementary inverters exhibited excellent characteristics, including high gain value of about 30.

  19. Irradiation of graphene field effect transistors with highly charged ions

    Energy Technology Data Exchange (ETDEWEB)

    Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

    2016-09-01

    In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

  20. Investigations on field-effect transistors based on two-dimensional materials

    Energy Technology Data Exchange (ETDEWEB)

    Finge, T.; Riederer, F.; Grap, T.; Knoch, J. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Mueller, M.R. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Infineon Technologies, Villach (Austria); Kallis, K. [Intelligent Microsystems Chair, TU Dortmund University (Germany)

    2017-11-15

    In the present article, experimental and theoretical investigations regarding field-effect transistors based on two-dimensional (2D) materials are presented. First, the properties of contacts between a metal and 2D material are discussed. To this end, metal-to-graphene contacts as well to transition metal dichalcogenides (TMD) are studied. Whereas metal-graphene contacts can be tuned with an appropriate back-gate, metal-TMD contacts exhibit strong Fermi level pinning showing substantially limited maximum possible drive current. Next, tungsten diselenide (WSe{sub 2}) field-effect transistors are presented. Employing buried-triple-gate substrates allows tuning source, channel and drain by applying appropriate gate voltages so that the device can be reconfigured to work as n-type, p-type and as so-called band-to-band tunnel field-effect transistor on the same WSe{sub 2} flake. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Carbon nanotube composite materials

    Science.gov (United States)

    O'Bryan, Gregory; Skinner, Jack L; Vance, Andrew; Yang, Elaine Lai; Zifer, Thomas

    2015-03-24

    A material consisting essentially of a vinyl thermoplastic polymer, un-functionalized carbon nanotubes and hydroxylated carbon nanotubes dissolved in a solvent. Un-functionalized carbon nanotube concentrations up to 30 wt % and hydroxylated carbon nanotube concentrations up to 40 wt % can be used with even small concentrations of each (less than 2 wt %) useful in producing enhanced conductivity properties of formed thin films.

  2. Development and characterization of vertical double-gate MOS field-effect transistors

    International Nuclear Information System (INIS)

    Trellenkamp, S.

    2004-07-01

    Planar MOS-field-effect transistors are common devices today used by the computer industry. When their miniaturization reaches its limit, alternate transistor concepts become necessary. In this thesis the development of vertical Double-Gate-MOS-field-effect transistors is presented. These types of transistors have a vertically aligned p-n-p junction (or n-p-n junction, respectively). Consequently, the source-drain current flows perpendicular with respect to the surface of the wafer. A Double-Gate-field-effect transistor is characterized by a very thin channel region framed by two parallel gates. Due to the symmetry of the structure and less bulk volume better gate control and hence better short channel behavior is expected, as well as an improved scaling potential. Nanostructuring of the transistor's active region is very challenging. Approximately 300 nm high and down to 30 nm wide silicon ridges are requisite. They can be realized using hydrogen silsesquioxane (HSQ) as inorganic high resolution resist for electron beam lithography. Structures defined in HSQ are then transferred with high anisotropy and selectivity into silicon using ICP-RIE (reactive ion etching with inductive coupled plasma). 25 nm wide and 330 nm high silicon ridges are achieved. Different transistor layouts are realized. The channel length is defined by epitaxial growth of doped silicon layers before or by ion implantation after nanostructuring, respectively. The transistors show source-drain currents up to 380 μA/μm and transconductances up to 480 μS/μm. Improved short channel behavior for decreasing width of the silicon ridges is demonstrated. (orig.)

  3. Direct observation of single-charge-detection capability of nanowire field-effect transistors.

    Science.gov (United States)

    Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

    2010-10-01

    A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

  4. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  5. Cohesive zone model of carbon nanotube-coated carbon fiber/polyester composites

    International Nuclear Information System (INIS)

    Agnihotri, Prabhat Kamal; Kar, Kamal K; Basu, Sumit

    2012-01-01

    It has been previously reported that the average properties of carbon nanotube-coated carbon fiber/polyester multiscale composites critically depend on the length and density of nanotubes on the fiber surface. In this paper the effect of nanotube length and density on the interfacial properties of the carbon nanotube-coated carbon fiber–polymer interface has been studied using shear lag and a cohesive zone model. The latter model incorporates frictional sliding after complete debonding between the fiber and matrix and has been developed to quantify the effect of nanotube coating on various interfacial characterizing parameters. Our numerical results indicate that fibers with an optimal coverage and length of nanotubes significantly increase the interfacial strength and friction between the fiber and polymer. However, they also embrittle the interface compared with bare fibers. (paper)

  6. Interfacing of DNA with carbon nanotubes for nanodevice applications

    International Nuclear Information System (INIS)

    Rastogi, Richa; Dhindsa, Navneet; Suri, C. Raman; Pant, B.D.; Tripathi, S.K.; Kaur, Inderpreet; Bharadwaj, Lalit M.

    2012-01-01

    In nanotechnology, carbon nanotubes are evolving as ‘hot spot’ due to their applications as most sensitive biosensors. Thus, study of effect of biomolecular interaction is prerequisite for their electrical application in biosensors and bioelectronics. Here, we have explored this effect on electrical properties of carbon nanotubes with DNA as a model biomolecule. A stable conjugate of carbon nanotubes with DNA is formed via covalent methodology employing quantum dot as fluoropore and characterized with various spectroscopic, fluoroscopic and microscopic techniques. CNT–DNA adduct showed decreased transconductance (from 614.46 μS to 1.34 μS) and shift of threshold voltage (from −0.85 V to 2.5 V) due to change in Schottky barriers at metal–nanotube contact. In addition, decrease in hole mobility (from 4.46 × 10 6 to 9.72 × 10 3 cm 2 V −1 s −1 ) and increase in ON-linear resistance (from 74 kΩ to 0.44 MΩ) conclude large change in device parameters. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. -- Graphical abstract: Carbon nanotubes are interfaced with DNA via covalent interactions and characterized with spectroscopic, fluoroscopic and microscopic techniques. Electrical characterization of this stable SWNT–DNA conjugate shows decreased transconductance and shift of threshold voltage towards positive gate voltages. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. Highlights: ► Effect of biomolecular (DNA) interaction on electrical

  7. Nanotubes on Display: How Carbon Nanotubes Can Be Integrated into Electronic Displays

    KAUST Repository

    Opatkiewicz, Justin; LeMieux, Melburne C.; Bao, Zhenan

    2010-01-01

    Random networks of single-walled carbon nanotubes show promise for use in the field of flexible electronics. Nanotube networks have been difficult to utilize because of the mixture of electronic types synthesized when grown. A variety of separation

  8. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  9. The effect of fibronectin on structural and biological properties of single walled carbon nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Mottaghitalab, Fatemeh [Department of Nanobiotechnology, Faculty of Biological Sciences, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Farokhi, Mehdi [National cell bank of Iran, Pasteur Institute, Tehran (Iran, Islamic Republic of); Atyabi, Fatemeh [Department of Pharmaceutical Nanoechnology, Faculty of Pharmacy, Tehran University of Medical Sciences, Tehran (Iran, Islamic Republic of); Omidvar, Ramin [Department of Biomedical Engineering, Amirkabir University of Technology (Tehran Polytechnic), Tehran (Iran, Islamic Republic of); Shokrgozar, Mohammad Ali, E-mail: mashokrgozar@pasteur.ac.ir [National cell bank of Iran, Pasteur Institute, Tehran (Iran, Islamic Republic of); Sadeghizadeh, Majid, E-mail: sadeghma@modares.ac.ir [Department Genetics, Faculty of Biological Sciences, Tarbiat Modares University, Tehran (Iran, Islamic Republic of)

    2015-06-01

    Highlights: • Increasing the cytocompatibility of single walled carbon nanotube by loading fibronectin. • Enhancing the hydrophilicity and nanosurface roughness of single walled carbon nanotube after loading fibronectin. • Fibronectin makes the surface properties of single walled carbon nanotube more suitable for cell proliferation and growth. - Abstract: Despite the attractive properties of carbon nanotubes (CNTs), cytoxicity and hydrophobicity are two main considerable features which limit their application in biomedical fields. It was well established that treating CNTs with extracellular matrix components could reduce these unfavourable characteristics. In an attempt to address these issues, fibronectin (FN) with different concentrations was loaded on single walled carbon nanotubes (SWCNTs) substrate. Scanning electron microscope, atomic force microscopy (AFM), contact angles and X-ray photoelectron spectroscopy (XPS) were preformed in order to characterize FN loaded SWCNTs substrates. According to XPS and AFM results, FN could interact with SWCNTs and for this, the hydrophilicity of SWCNTs was improved. Additionally, SWCNT modified with FN showed less cytotoxicity compared with neat SWCNT. Finally, FN was shown to act as an interesting extracellular component for enhancing the biological properties of SWCNT.

  10. The effect of fibronectin on structural and biological properties of single walled carbon nanotube

    International Nuclear Information System (INIS)

    Mottaghitalab, Fatemeh; Farokhi, Mehdi; Atyabi, Fatemeh; Omidvar, Ramin; Shokrgozar, Mohammad Ali; Sadeghizadeh, Majid

    2015-01-01

    Highlights: • Increasing the cytocompatibility of single walled carbon nanotube by loading fibronectin. • Enhancing the hydrophilicity and nanosurface roughness of single walled carbon nanotube after loading fibronectin. • Fibronectin makes the surface properties of single walled carbon nanotube more suitable for cell proliferation and growth. - Abstract: Despite the attractive properties of carbon nanotubes (CNTs), cytoxicity and hydrophobicity are two main considerable features which limit their application in biomedical fields. It was well established that treating CNTs with extracellular matrix components could reduce these unfavourable characteristics. In an attempt to address these issues, fibronectin (FN) with different concentrations was loaded on single walled carbon nanotubes (SWCNTs) substrate. Scanning electron microscope, atomic force microscopy (AFM), contact angles and X-ray photoelectron spectroscopy (XPS) were preformed in order to characterize FN loaded SWCNTs substrates. According to XPS and AFM results, FN could interact with SWCNTs and for this, the hydrophilicity of SWCNTs was improved. Additionally, SWCNT modified with FN showed less cytotoxicity compared with neat SWCNT. Finally, FN was shown to act as an interesting extracellular component for enhancing the biological properties of SWCNT

  11. The effect of different order of purification treatments on the purity of multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Xinlong [College of Materials Science and Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 North People Road, Shanghai 201620 (China); Department of Biological and Chemical Engineering, Guangxi University of Technology, 268 Donghuan Road, Liuzhou 545006 (China); Wei, Yizhe [College of Materials Science and Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 North People Road, Shanghai 201620 (China); Zou, Liming, E-mail: lmzou@dhu.edu.cn [College of Materials Science and Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 North People Road, Shanghai 201620 (China); Xu, Su [College of Materials Science and Engineering, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 North People Road, Shanghai 201620 (China)

    2013-07-01

    The multiwalled carbon nanotubes were purified with different order treatments of gas phase and liquid phase. Amorphous carbon and iron catalysts were removed and some oxygen-containing groups were attached to the surface of multiwalled carbon nanotubes after purification. The multiwalled carbon nanotubes were determined and characterized by thermogravimetric analysis, Fourier transform infrared spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, Boehm's neutralizing titration method and weighing method. The morphology of multiwalled carbon nanotubes was verified using scanning electron microscopy and transmission electron microscopy. The results indicated amorphous carbon and iron catalysts were removed completely while the structure of multiwalled carbon nanotubes was slightly destructed by two treatment methods. Three principal oxygen-containing groups on the surface of multiwalled carbon nanotubes were carboxyl, lactone and phenolic hydroxyl in descending order of their concentrations. The method I including gas phase treatment firstly and then liquid phase treatment, is more effective to purify multiwalled carbon nanotubes and to protect the structure of multiwalled carbon nanotubes than method II including liquid phase treatment firstly and then gas phase treatment.

  12. Carbon nanotubes : their synthesis and integration into nanofabricated structures

    NARCIS (Netherlands)

    Druzhinina, Tamara

    2011-01-01

    The field of nanotechnology has experienced constantly increasing interest over the past decades both from industry and academy. Commonly used nanomaterials include: nanoparticles, nanowires, quantum dots, fullerenes, and carbon nanotubes. Carbon nanotubes, in particular, are promising building

  13. How fast does water flow in carbon nanotubes?

    DEFF Research Database (Denmark)

    Kannam, Sridhar; Todd, Billy; Hansen, Jesper Schmidt

    2013-01-01

    The purpose of this paper is threefold. First, we review the existing literature on flow rates of water in carbon nanotubes. Data for the slip length which characterizes the flow rate are scattered over 5 orders of magnitude for nanotubes of diameter 0.81–10 nm. Second, we precisely compute...... the slip length using equilibrium molecular dynamics (EMD) simulations, from which the interfacial friction between water and carbon nanotubes can be found, and also via external field driven non-equilibrium molecular dynamics simulations (NEMD). We discuss some of the issues in simulation studies which...... and reliably extrapolate the results for the slip length to values of the field corresponding to experimentally accessible pressure gradients. Finally, we comment on several issues concerning water flow rates in carbon nanotubes which may lead to some future research directions in this area....

  14. Excitons in single-walled carbon nanotubes: environmental effect

    International Nuclear Information System (INIS)

    Smyrnov, O.A.

    2010-01-01

    The properties of excitons in semiconducting single-walled carbon nanotubes (SWCNTs) isolated in vacuum or a medium and their contributions to the optical spectra of nanotubes are studied within the elementary potential model, in which an exciton is represented as a bound state of two oppositely charged quasiparticles confined to the nanotube surface. The emphasis is given on the influence of the dielectric environment surrounding a nanotube on the exciton spectra. For nanotubes in the environment with a permittivity less than ∼ 1:8; the ground-state exciton binding energies exceed the respective energy gaps, whereas the obtained binding energies of excitons in nanotubes in a medium with permittivity greater than ∼ 4 are in good accordance with the corresponding experimental data and consistent with the known scaling relation for the environmental effect. The stabilization of a single-electron spectrum in SWCNTs in media with rather low permittivities is discussed.

  15. Methods for producing reinforced carbon nanotubes

    Science.gov (United States)

    Ren, Zhifen [Newton, MA; Wen, Jian Guo [Newton, MA; Lao, Jing Y [Chestnut Hill, MA; Li, Wenzhi [Brookline, MA

    2008-10-28

    Methods for producing reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials are disclosed. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

  16. Low Hysteresis Carbon Nanotube Transistors Constructed via a General Dry-Laminating Encapsulation Method on Diverse Surfaces.

    Science.gov (United States)

    Yang, Yi; Wang, Zhongwu; Xu, Zeyang; Wu, Kunjie; Yu, Xiaoqin; Chen, Xiaosong; Meng, Yancheng; Li, Hongwei; Qiu, Song; Jin, Hehua; Li, Liqiang; Li, Qingwen

    2017-04-26

    Electrical hysteresis in carbon nanotube thin-film transistor (CNTTFT) due to surface adsorption of H 2 O/O 2 is a severe obstacle for practical applications. The conventional encapsulation methods based on vacuum-deposited inorganic materials or wet-coated organic materials have some limitations. In this work, we develop a general and highly efficient dry-laminating encapsulation method to reduce the hysteresis of CNTTFTs, which may simultaneously realize the construction and encapsulation of CNTTFT. Furthermore, by virtue of dry procedure and wide compatibility of PMMA, this method is suitable for the construction of CNTTFT on diverse surface including both inorganic and organic dielectric materials. Significantly, the dry-encapsulated CNTTFT exhibits very low or even negligible hysteresis with good repeatability and air stability, which is greatly superior to the nonencapsulated and wet-encapsulated CNTTFT with spin-coated PMMA. The dry-laminating encapsulation strategy, a kind of technological innovation, resolves a significant problem of CNTTFT and therefore will be promising in facile transferring and packaging the CNT films for high-performance optoelectronic devices.

  17. Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

    Institute of Scientific and Technical Information of China (English)

    潘洪亮; 金智; 麻芃; 郭建楠; 刘新宇; 叶甜春; 李佳; 敦少博; 冯志红

    2011-01-01

    Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of l μm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95% active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.%Wafer-scale graphene Beld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition AI2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of l μm, are larger than 800MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene Geld-effect transistors, which paves the way for high-performance graphene devices and circuits.

  18. Performance of a carbon nanotube field emission electron gun

    Science.gov (United States)

    Getty, Stephanie A.; King, Todd T.; Bis, Rachael A.; Jones, Hollis H.; Herrero, Federico; Lynch, Bernard A.; Roman, Patrick; Mahaffy, Paul

    2007-04-01

    A cold cathode field emission electron gun (e-gun) based on a patterned carbon nanotube (CNT) film has been fabricated for use in a miniaturized reflectron time-of-flight mass spectrometer (RTOF MS), with future applications in other charged particle spectrometers, and performance of the CNT e-gun has been evaluated. A thermionic electron gun has also been fabricated and evaluated in parallel and its performance is used as a benchmark in the evaluation of our CNT e-gun. Implications for future improvements and integration into the RTOF MS are discussed.

  19. Community effects of carbon nanotubes in aquatic sediments

    NARCIS (Netherlands)

    Velzeboer, I.; Kupryianchyk, D.; Peeters, E.T.H.M.; Koelmans, A.A.

    2011-01-01

    Aquatic sediments form an important sink for manufactured nanomaterials, like carbon nanotubes (CNT) and fullerenes, thus potentially causing adverse effects to the aquatic environment, especially to benthic organisms. To date, most nanoparticle effect studies used single species tests in the

  20. Channeling potential in single-walled carbon nanotubes: The effect of radial deformation

    International Nuclear Information System (INIS)

    Abu-Assy, M.K.; Soliman, M.S.

    2016-01-01

    We study the effect of radial deformation in single-walled carbon nanotubes (SWCNTs), due to one external factor, on the channeling potential. The calculations covered the channeling potential for positrons of 100 MeV move along the z-axis, which is the axis of the radially deformed SWCNTs (6, 0), (8, 0) under external mechanical stress at different values for the induced strain and also for radially deformed SWCNT (5, 5) under external transverse electric field of 1.8 and 2.6 V/Å. The calculations executed according to the continuum model approximation given by Lindhard for the case of an axial channeling in single crystals. The results of the calculations in this work agreed well with previous calculations depending on the equilibrium electron density in perfect carbon nanotubes. It has been found that, for perfect nanotubes, the channeling potential, i.e., the potential at any point (x, y) in a plane normal to the nanotube axis (xy-plane), is a function of the distance from the nanotube center whatever the (x, y) coordinate and hence, it could be expressed in terms of one independent variable. On the other hand, in radially deformed SWCNTs, the channeling potential was found to be a function of two independent variables (x, y) and could be given here by a general formula in terms of fitting parameters for each nanotube with chiral index (n, m). The obtained formula has been used in plotting the contour plot for the channeling potential.

  1. Channeling potential in single-walled carbon nanotubes: The effect of radial deformation

    Energy Technology Data Exchange (ETDEWEB)

    Abu-Assy, M.K. [Physics Department, Faculty of Science, Suez-Canal University, Ismailia 41522 (Egypt); Soliman, M.S., E-mail: Mahmoud_einstien2@yahoo.com [Physics Department, Faculty of Science, Suez-Canal University, El-Arish (Egypt)

    2016-10-01

    We study the effect of radial deformation in single-walled carbon nanotubes (SWCNTs), due to one external factor, on the channeling potential. The calculations covered the channeling potential for positrons of 100 MeV move along the z-axis, which is the axis of the radially deformed SWCNTs (6, 0), (8, 0) under external mechanical stress at different values for the induced strain and also for radially deformed SWCNT (5, 5) under external transverse electric field of 1.8 and 2.6 V/Å. The calculations executed according to the continuum model approximation given by Lindhard for the case of an axial channeling in single crystals. The results of the calculations in this work agreed well with previous calculations depending on the equilibrium electron density in perfect carbon nanotubes. It has been found that, for perfect nanotubes, the channeling potential, i.e., the potential at any point (x, y) in a plane normal to the nanotube axis (xy-plane), is a function of the distance from the nanotube center whatever the (x, y) coordinate and hence, it could be expressed in terms of one independent variable. On the other hand, in radially deformed SWCNTs, the channeling potential was found to be a function of two independent variables (x, y) and could be given here by a general formula in terms of fitting parameters for each nanotube with chiral index (n, m). The obtained formula has been used in plotting the contour plot for the channeling potential.

  2. Thermal conductivity and thermal rectification in unzipped carbon nanotubes

    International Nuclear Information System (INIS)

    Ni Xiaoxi; Li Baowen; Zhang Gang

    2011-01-01

    We study the thermal transport in completely unzipped carbon nanotubes, which are called graphene nanoribbons, partially unzipped carbon nanotubes, which can be seen as carbon-nanotube-graphene-nanoribbon junctions, and carbon nanotubes by using molecular dynamics simulations. It is found that the thermal conductivity of a graphene nanoribbon is much less than that of its perfect carbon nanotube counterparts because of the localized phonon modes at the boundary. A partially unzipped carbon nanotube has the lowest thermal conductivity due to additional localized modes at the junction region. More strikingly, a significant thermal rectification effect is observed in both partially unzipped armchair and zigzag carbon nanotubes. Our results suggest that carbon-nanotube-graphene-nanoribbon junctions can be used in thermal energy control.

  3. Oxidation of Carbon Nanotubes in an Ionizing Environment.

    Science.gov (United States)

    Koh, Ai Leen; Gidcumb, Emily; Zhou, Otto; Sinclair, Robert

    2016-02-10

    In this work, we present systematic studies on how an illuminating electron beam which ionizes molecular gas species can influence the mechanism of carbon nanotube oxidation in an environmental transmission electron microscope (ETEM). We found that preferential attack of the nanotube tips is much more prevalent than for oxidation in a molecular gas environment. We establish the cumulative electron doses required to damage carbon nanotubes from 80 keV electron beam irradiation in gas versus in high vacuum. Our results provide guidelines for the electron doses required to study carbon nanotubes within or without a gas environment, to determine or ameliorate the influence of the imaging electron beam. This work has important implications for in situ studies as well as for the oxidation of carbon nanotubes in an ionizing environment such as that occurring during field emission.

  4. Nanoneedle transistor-based sensors for the selective detection of intracellular calcium ions.

    Science.gov (United States)

    Son, Donghee; Park, Sung Young; Kim, Byeongju; Koh, Jun Tae; Kim, Tae Hyun; An, Sangmin; Jang, Doyoung; Kim, Gyu Tae; Jhe, Wonho; Hong, Seunghun

    2011-05-24

    We developed a nanoneedle transistor-based sensor (NTS) for the selective detection of calcium ions inside a living cell. In this work, a single-walled carbon nanotube-based field effect transistor (swCNT-FET) was first fabricated at the end of a glass nanopipette and functionalized with Fluo-4-AM probe dye. The selective binding of calcium ions onto the dye molecules altered the charge state of the dye molecules, resulting in the change of the source-drain current of the swCNT-FET as well as the fluorescence intensity from the dye. We demonstrated the electrical and fluorescence detection of the concentration change of intracellular calcium ions inside a HeLa cell using the NTS.

  5. Electron diffraction from carbon nanotubes

    International Nuclear Information System (INIS)

    Qin, L-C

    2006-01-01

    The properties of a carbon nanotube are dependent on its atomic structure. The atomic structure of a carbon nanotube can be defined by specifying its chiral indices (u, v), that specify its perimeter vector (chiral vector), with which the diameter and helicity are also determined. The fine electron beam available in a modern transmission electron microscope (TEM) offers a unique probe to reveal the atomic structure of individual nanotubes. This review covers two aspects related to the use of the electron probe in the TEM for the study of carbon nanotubes: (a) to understand the electron diffraction phenomena for inter-pretation of the electron diffraction patterns of carbon nanotubes and (b) to obtain the chiral indices (u, v), of the carbon nanotubes from the electron diffraction patterns. For a nanotube of a given structure, the electron scattering amplitude from the carbon nanotube is first described analytically in closed form using the helical diffraction theory. From a known structure as given by the chiral indices (u, v), its electron diffraction pattern can be calculated and understood. The reverse problem, i.e. assignment of the chiral indices from an electron diffraction pattern of a carbon nanotube, is approached from the relationship between the electron scattering intensity distribution and the chiral indices (u, v). We show that electron diffraction patterns can provide an accurate and unambiguous assignment of the chiral indices of carbon nanotubes. The chiral indices (u, v) can be read indiscriminately with a high accuracy from the intensity distribution on the principal layer lines in an electron diffraction pattern. The symmetry properties of electron diffraction from carbon nanotubes and the electron diffraction from deformed carbon nanotubes are also discussed in detail. It is shown that 2mm symmetry is always preserved for single-walled carbon nanotubes, but it can break down for multiwalled carbon nanotubes under some special circumstances

  6. Gate Control Coefficient Effect on CNFET Characteristic

    International Nuclear Information System (INIS)

    Sanudin, Rahmat; Ma'Radzi, Ahmad Alabqari; Nayan, Nafarizal

    2009-01-01

    The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current-voltage (I-V) characteristic of ballistic CNFET. The simulation study used the MOSFET-like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.

  7. Effects of single-walled carbon nanotubes on the bioavailability of PCBs in field-contaminated sediments

    Science.gov (United States)

    Adsorption of hydrophobic organic contaminants (HOCs) to black carbon is a well studied phenomenon. One emerging class of engineered black carbon materials are single-walled carbon nanotubes (SWNT). Little research has investigated the potential of SWNT to adsorb and sequester HO...

  8. Ultralight Graphene/Carbon Nanotubes Aerogels with Compressibility and Oil Absorption Properties

    Directory of Open Access Journals (Sweden)

    Da Zhao

    2018-04-01

    Full Text Available Graphene aerogels have many advantages, such as low density, high elasticity and strong adsorption. They are considered to be widely applicable in many fields. At present, the most valuable research area aims to find a convenient and effective way to prepare graphene aerogels with excellent properties. In this work graphene/carbon nanotube aerogels are prepared through hydrothermal reduction, freeze-drying and high temperature heat treatment with the blending of graphene oxide and carbon nanotubes. A new reducing agent-ascorbic acid is selected to explore the best preparation process. The prepared aerogels have compression and resilience and oil absorption properties due to the addition of carbon nanotubes as designed.

  9. Aligned carbon nanotubes. Physics, concepts, fabrication and devices

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhifeng; Lan, Yucheng [Boston College, Chestnut Hill, MA (United States). Dept. of Physics; Wang, Yang [South China Normal Univ. Guangzhou (China). Inst. for Advanced Materials

    2013-07-01

    This book gives a survey of the physics and fabrication of carbon nanotubes and their applications in optics, electronics, chemistry and biotechnology. It focuses on the structural characterization of various carbon nanotubes, fabrication of vertically or parallel aligned carbon nanotubes on substrates or in composites, physical properties for their alignment, and applications of aligned carbon nanotubes in field emission, optical antennas, light transmission, solar cells, chemical devices, bio-devices, and many others. Major fabrication methods are illustrated in detail, particularly the most widely used PECVD growth technique on which various device integration schemes are based, followed by applications such as electrical interconnects, nanodiodes, optical antennas, and nanocoax solar cells, whereas current limitations and challenges are also be discussed to lay the foundation for future developments.

  10. Effect of Disorder on the Conductance of Spin Field Effect Transistors (SPINFET)

    OpenAIRE

    Cahay, M.; Bandyopadhyay, S.

    2003-01-01

    We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the amplitude and phase of the transistor's conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal conductance fluctuations in mesoscopic samples and is extremely problematic as far as device imple...

  11. Electrical conductivity of metal–carbon nanotube structures: Effect of ...

    Indian Academy of Sciences (India)

    Administrator

    The electrical properties of asymmetric metal–carbon nanotube (CNT) structures have been studied using ... The models with asymmetric metal contacts and carbon nanotube bear resemblance to experimental ... ordinary mechanical strength.

  12. Composite films of oxidized multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as a contact electrode for transistor and inverter devices.

    Science.gov (United States)

    Yun, Dong-Jin; Rhee, Shi-Woo

    2012-02-01

    Composite films of multiwall carbon nanotube (MWNT)/poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were prepared by spin-coating a mixture solution. The effect of the MWNT loading and the MWNT oxidation, with acid solution or ultraviolet (UV)-ozone treatment, on the film properties such as surface roughness, work function, surface energy, optical transparency and conductivity were studied. Also pentacene thin film transistors and inverters were made with these composite films as a contact metal and the device characteristics were measured. The oxidation of MWNT reduced the conductivity of MWNT/PEDOT:PSS composite film but increased the work function and transparency. UV-ozone treated MWNT/PEDOT:PSS composite film showed higher conductivity (14000 Ω/□) and work function (4.9 eV) than acid-oxidized MWNT/PEDOT:PSS composite film and showed better performance as a source/drain electrode in organic thin film transistor (OTFT) than other types of MWNT/PEDOT:PSS composite films. Hole injection barrier of the UV-ozone treated MWNT/PEDOT:PSS composite film with pentacene was significantly lower than any other films because of the higher work function.

  13. Carbon Nanotubes as Optical Sensors in Biomedicine.

    Science.gov (United States)

    Farrera, Consol; Torres Andón, Fernando; Feliu, Neus

    2017-11-28

    Single-walled carbon nanotubes (SWCNTs) have become potential candidates for a wide range of medical applications including sensing, imaging, and drug delivery. Their photophysical properties (i.e., the capacity to emit in the near-infrared), excellent photostability, and fluorescence, which is highly sensitive to the local environment, make SWCNTs promising optical probes in biomedicine. In this Perspective, we discuss the existing strategies for and challenges of using carbon nanotubes for medical diagnosis based on intracellular sensing as well as discuss also their biocompatibility and degradability. Finally, we highlight the potential improvements of this nanotechnology and future directions in the field of carbon nanotubes for biomedical applications.

  14. Structured-gate organic field-effect transistors

    International Nuclear Information System (INIS)

    Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

    2012-01-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

  15. Structured-gate organic field-effect transistors

    Science.gov (United States)

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  16. Outlook and emerging semiconducting materials for ambipolar transistors.

    Science.gov (United States)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-02-26

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

    International Nuclear Information System (INIS)

    Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

    2010-01-01

    Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

  18. Enhanced adhesion between carbon nanotubes and substrate surfaces by low-temperature annealing

    International Nuclear Information System (INIS)

    Jang, Chi Woong; Byun, Young Tae; Woo, Deok Ha; Lee, Seok; Jhon, Young Min

    2012-01-01

    We enhanced the adhesion forces between carbon nanotubes (CNTs) and the substrate surface by using a low-temperature annealing process at 180 .deg. C for 300 s to protect the CNTs throughout the processes in photolithography for fabricating CNT-based devices, especially ion and bio sensors which are always exposed to liquids. The adhesion force was tested by using the adhesion durability test of soaking the fabricated CNT field effect transistors (CNT-FETs) in de-ionized water at room temperature for 300 s, and the adsorption quantities of CNTs were analyzed by using I - V measurements on the CNT-FETs before and after each adhesion durability test. The conductance change of the CNT-FETs fabricated with the annealing process was considerably decreased by more than a factor of 10 5 compared to that without the annealing process, implying that CNTs adhere much more strongly to the substrate after the annealing process.

  19. Electronic structures and three-dimensional effects of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Koretsune, Takashi; Saito, Susumu

    2008-01-01

    We study boron-doped carbon nanotubes by first-principles methods based on the density functional theory. To discuss the possibility of superconductivity, we calculate the electronic band structure and the density of states (DOS) of boron-doped (10,0) nanotubes by changing the boron density. It is found that the Fermi level density of states D(ε F ) increases upon lowering the boron density. This can be understood in terms of the rigid band picture where the one-dimensional van Hove singularity lies at the edge of the valence band in the DOS of the pristine nanotube. The effect of three-dimensionality is also considered by performing the calculations for bundled (10,0) nanotubes and boron-doped double-walled carbon nanotubes (10,0)/(19,0). From the calculation of the bundled nanotubes, it is found that interwall dispersion is sufficiently large to broaden the peaks of the van Hove singularity in the DOS. Thus, to achieve the high D(ε F ) using the bundle of nanotubes with single chirality, we should take into account the distance from each nanotube. In the case of double-walled carbon nanotubes, we find that the holes introduced to the inner tube by boron doping spread also on the outer tube, while the band structure of each tube remains almost unchanged.

  20. Effective models for excitons in carbon nanotubes

    DEFF Research Database (Denmark)

    Cornean, Horia; Duclos, Pierre; Ricaud, Benjamin

    We analyse the low lying spectrum of a model of excitons in carbon nanotubes. Consider two particles with a Coulomb self-interaction, placed on an infinitely long cylinder. If the cylinder radius becomes small, the low lying spectrum is well described by a one-dimensional effective Hamiltonian...

  1. Dephasing and hyperfine interaction in carbon nanotubes double quantum dots

    DEFF Research Database (Denmark)

    Reynoso, Andres Alejandro; Flensberg, Karsten

    2012-01-01

    We study theoretically the return probability experiment, which is used to measure the dephasing time T-2*, in a double quantum dot (DQD) in semiconducting carbon nanotubes with spin-orbit coupling and disorder-induced valley mixing. Dephasing is due to hyperfine interaction with the spins of the C...... with these for DQDs in clean nanotubes, whereas the disorder effect is always relevant when the magnetic field is perpendicular to the nanotube axis....

  2. Preparation of carbon nanotubes from vacuum pyrolysis of polycarbosilane

    International Nuclear Information System (INIS)

    Jou, S.; Hsu, C.K.

    2004-01-01

    Carbon nanotubes (CNTs) were synthesized by vacuum pyrolysis of two types of polycarbosilane (PCS) with iron nano-particles between 800 and 1100 deg. C. Straight nanotubes were obtained from low molecular weight (990 g/mol) PCS whereas curled nanotubes were derived from medium molecular weight (1290 g/mol) PCS. Diameters of these straight and curled nanotubes were between 5 and 20 nm. The mechansim of condensed phase growth of carbon nanotubes was discussed. Electron emission capability of these carbon nanotubes increased with their pyrolyzing temperature. The electric fields required to emit a current density of 10 -2 A/cm 2 from the straight nanotubes being pyrolyzed at 800, 900, 1000, and 1100 deg. C were 1.17, 0.73, 0.67, and 0.33 V/μm, respectively

  3. Effect of multiwalled carbon nanotube loading on the properties of Nafion(R) membranes

    CSIR Research Space (South Africa)

    Cele, NP

    2015-10-01

    Full Text Available The dispersion of carbon nanotubes is one of the problems in the application of polymer nanocomposites. In this study, the effect of chemical functionalization of the carbon nanotube surface on the dispersion of the tubes within a polymer...

  4. Low-frequency plasmons in metallic carbon nanotubes

    International Nuclear Information System (INIS)

    Lin, M.F.; Chuu, D.S.; Shung, K.W.

    1997-01-01

    A metallic carbon nanotube could exhibit a low-frequency plasmon, while a semiconducting carbon nanotube or a graphite layer could not. This plasmon is due to the free carriers in the linear subbands intersecting at the Fermi level. The low-frequency plasmon, which corresponds to the vanishing transferred angular momentum, belongs to an acoustic plasmon. For a smaller metallic nanotube, it could exist at larger transferred momenta, and its frequency is higher. Such a plasmon behaves as that in a one-dimensional electron gas (EGS). However, it is very different from the π plasmons in all carbon nanotubes. Intertube Coulomb interactions in a metallic multishell nanotube and a metallic nanotube bundle have been included. They have a strong effect on the low-frequency plasmon. The intertube coupling among coaxial nanotubes markedly modifies the acoustic plasmons in separate metallic nanotubes. When metallic carbon nanotubes are packed in the bundle form, the low-frequency plasmon would change into an optical plasmon, and behave like that in a three-dimensional EGS. Experimental measurements could be used to distinguish metallic and semiconducting carbon nanotubes. copyright 1997 The American Physical Society

  5. Conducting carbonized polyaniline nanotubes

    International Nuclear Information System (INIS)

    Mentus, Slavko; Ciric-Marjanovic, Gordana; Trchova, Miroslava; Stejskal, Jaroslav

    2009-01-01

    Conducting nitrogen-containing carbon nanotubes were synthesized by the carbonization of self-assembled polyaniline nanotubes protonated with sulfuric acid. Carbonization was carried out in a nitrogen atmosphere at a heating rate of 10 deg. C min -1 up to a maximum temperature of 800 deg. C. The carbonized polyaniline nanotubes which have a typical outer diameter of 100-260 nm, with an inner diameter of 20-170 nm and a length extending from 0.5 to 0.8 μm, accompanied with very thin nanotubes with outer diameters of 8-14 nm, inner diameters 3.0-4.5 nm and length extending from 0.3 to 1.0 μm, were observed by scanning and transmission electron microscopies. Elemental analysis showed 9 wt% of nitrogen in the carbonized product. Conductivity of the nanotubular PANI precursor, amounting to 0.04 S cm -1 , increased to 0.7 S cm -1 upon carbonization. Molecular structure of carbonized polyaniline nanotubes has been analyzed by FTIR and Raman spectroscopies, and their paramagnetic characteristics were compared with the starting PANI nanotubes by EPR spectroscopy.

  6. Conducting carbonized polyaniline nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mentus, Slavko; Ciric-Marjanovic, Gordana [Faculty of Physical Chemistry, University of Belgrade, Studentski trg 12-16, 11158 Belgrade (Serbia); Trchova, Miroslava; Stejskal, Jaroslav [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky Square 2, 162 06 Prague 6 (Czech Republic)], E-mail: gordana@ffh.bg.ac.rs

    2009-06-17

    Conducting nitrogen-containing carbon nanotubes were synthesized by the carbonization of self-assembled polyaniline nanotubes protonated with sulfuric acid. Carbonization was carried out in a nitrogen atmosphere at a heating rate of 10 deg. C min{sup -1} up to a maximum temperature of 800 deg. C. The carbonized polyaniline nanotubes which have a typical outer diameter of 100-260 nm, with an inner diameter of 20-170 nm and a length extending from 0.5 to 0.8 {mu}m, accompanied with very thin nanotubes with outer diameters of 8-14 nm, inner diameters 3.0-4.5 nm and length extending from 0.3 to 1.0 {mu}m, were observed by scanning and transmission electron microscopies. Elemental analysis showed 9 wt% of nitrogen in the carbonized product. Conductivity of the nanotubular PANI precursor, amounting to 0.04 S cm{sup -1}, increased to 0.7 S cm{sup -1} upon carbonization. Molecular structure of carbonized polyaniline nanotubes has been analyzed by FTIR and Raman spectroscopies, and their paramagnetic characteristics were compared with the starting PANI nanotubes by EPR spectroscopy.

  7. Effect of Catalytic Layer Thickness on Diameter of Vertically Aligned Individual Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Hyun Kyung Jung

    2014-01-01

    Full Text Available The effect of catalytic thin film thickness on the diameter control of individual carbon nanotubes grown by plasma enhanced chemical vapor deposition was investigated. Individual carbon nanotubes were grown on catalytic nanodot arrays, which were fabricated by e-beam lithography and e-beam evaporation. During e-beam evaporation of the nanodot pattern, more catalytic metal was deposited at the edge of the nanodots than the desired catalyst thickness. Because of this phenomenon, carbon atoms diffused faster near the center of the dots than at the edge of the dots. The carbon atoms, which were gathered at the interface between the catalytic nanodot and the diffusion barrier, accumulated near the center of the dot and lifted the catalyst off. From the experiments, an individual carbon nanotube with the same diameter as that of the catalytic nanodot was obtained from a 5 nm thick catalytic nanodot; however, an individual carbon nanotube with a smaller diameter (~40% reduction was obtained from a 50 nm thick nanodot. We found that the thicker the catalytic layer, the greater the reduction in diameter of the carbon nanotubes. The diameter-controlled carbon nanotubes could have applications in bio- and nanomaterial scanning and as a contrast medium for magnetic resonance imaging.

  8. Purification of carbon nanotubes via selective heating

    Science.gov (United States)

    Rogers, John A.; Wilson, William L.; Jin, Sung Hun; Dunham, Simon N.; Xie, Xu; Islam, Ahmad; Du, Frank; Huang, Yonggang; Song, Jizhou

    2017-11-21

    The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

  9. Conformational changes of fibrinogen in dispersed carbon nanotubes

    Directory of Open Access Journals (Sweden)

    Park SJ

    2012-08-01

    Full Text Available Sung Jean Park,1 Dongwoo Khang21College of Pharmacy, Gachon University, Yeonsu-gu, Incheon, South Korea; 2School of Nano and Advanced Materials Science Engineering and Center for PRC and RIGET, Gyeongsang National University, Jinju, South KoreaAbstract: The conformational changes of plasma protein structures in response to carbon nanotubes are critical for determining the nanotoxicity and blood coagulation effects of carbon nanotubes. In this study, we identified that the functional intensity of carboxyl groups on carbon nanotubes, which correspond to the water dispersity or hydrophilicity of carbon nanotubes, can induce conformational changes in the fibrinogen domains. Also, elevation of carbon nanotube density can alter the secondary structures (ie, helices and beta sheets of fibrinogen. Furthermore, fibrinogen that had been in contact with the nanoparticle material demonstrated a different pattern of heat denaturation compared with free fibrinogen as a result of a variation in hydrophilicity and concentration of carbon nanotubes. Considering the importance of interactions between carbon nanotubes and plasma proteins in the drug delivery system, this study elucidated the correlation between nanoscale physiochemical material properties of carbon nanotubes and associated structural changes in fibrinogen.Keywords: carbon nanotubes, fibrinogen, nanotoxicity, conformational change, denaturation

  10. Optical Study of Liquid Crystal Doped with Multiwalled Carbon Nanotube

    Science.gov (United States)

    Gharde, Rita A.; Thakare, Sangeeta Y.

    2014-11-01

    Liquid crystalline materials have been useful for display devices i.e watches, calculators, automobile dashboards, televisions, multi media projectors etc. as well as in electro tunable lasers, optical fibers and lenses. Carbon nanotube is chosen as the main experimental factor in this study as it has been observed that Carbon Nano Tube influence the existing properties of liquid crystal host and with the doping of CNT can enhance1 the properties of LC. The combination of carbon nanotube (CNT) and liquid crystal (LC) materials show considerable interest in the scientific community due to unique physical properties of CNT in liquid crystal. Dispersion of CNTs in LCs can provide us a cheap, simple, versatile and effective means of controlling nanotube orientation on macroscopic scale with no restrictions on nanotube type. LCs have the long range orientational order rendering them to be anisotropic phases. If CNTs can be well dispersed in LC matrix, they will align with their long axes along the LC director to minimize distortions of the LC director field and the free energy. In this paper, we doped liquid crystal (Cholesteryl Nonanoate) by a small amount of multiwall carbon nanotube 0.05% and 0.1% wt. We found that by adding carbon nanotube to liquid crystals the melting point of the mixture is decreased but TNI is increased. It has been also observed that with incereas in concentration of carbon nanotube into liquid crystal shows conciderable effect on LC. The prepared samples were characterized using various techniques to study structural, thermal and optical properties i.e PMS, FPSS, UV-Vis spectroscopy, FT-IR measurements, and DTA.

  11. Multiwalled carbon nanotubes effect on the bioavailability of artemisinin and its cytotoxity to cancerous cells

    Science.gov (United States)

    Rezaei, Behzad; Majidi, Najmeh; Noori, Shokoofe; Hassan, Zuhair M.

    2011-12-01

    Artemisinin regarded as one of the most promising anticancer drugs can bind to DNA with a binding constant of 1.04 × 104 M-1. The electrochemical experiments indicated that for longer incubation time periods, the reduction peak current of artemisinin on carbon nanotube modified electrode increases. Therefore, the uptake of drug molecules from a solution into CNTs will be achieved automatically by adsorption of 88.7% of artemisinin onto carbon nanotubes surface without alteration in drug properties. Hence, capability of carbon nanotubes to have synergistic effect on the bioavailability of artemisinin was investigated. Experimental tests on K562 cancer cell lines growth by MTT assay proved that multi-walled carbon nanotubes can enhance the cytotoxity of artemisinin to the targeted cancer cells with unprecedented accuracy and efficiency. The IC50 values were 65 and 35 μM for artemisinin and artemisinin loaded on multi-walled carbon nanotubes, respectively; demonstrating that artemisinin loaded on multi-walled carbon nanotubes is more effective in inhibition of cancer cell lines growth.

  12. Multiwalled carbon nanotubes effect on the bioavailability of artemisinin and its cytotoxity to cancerous cells

    International Nuclear Information System (INIS)

    Rezaei, Behzad; Majidi, Najmeh; Noori, Shokoofe; Hassan, Zuhair M.

    2011-01-01

    Artemisinin regarded as one of the most promising anticancer drugs can bind to DNA with a binding constant of 1.04 × 10 4 M −1 . The electrochemical experiments indicated that for longer incubation time periods, the reduction peak current of artemisinin on carbon nanotube modified electrode increases. Therefore, the uptake of drug molecules from a solution into CNTs will be achieved automatically by adsorption of 88.7% of artemisinin onto carbon nanotubes surface without alteration in drug properties. Hence, capability of carbon nanotubes to have synergistic effect on the bioavailability of artemisinin was investigated. Experimental tests on K562 cancer cell lines growth by MTT assay proved that multi-walled carbon nanotubes can enhance the cytotoxity of artemisinin to the targeted cancer cells with unprecedented accuracy and efficiency. The IC 50 values were 65 and 35 μM for artemisinin and artemisinin loaded on multi-walled carbon nanotubes, respectively; demonstrating that artemisinin loaded on multi-walled carbon nanotubes is more effective in inhibition of cancer cell lines growth.

  13. Interfacing of DNA with carbon nanotubes for nanodevice applications

    Energy Technology Data Exchange (ETDEWEB)

    Rastogi, Richa, E-mail: richa.bend@gmail.com [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India); Centre of Advanced Studies in Physics, Punjab University, Sector-14, Chandigarh 160014 (India); Dhindsa, Navneet [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India); Suri, C. Raman [Biosensor Division, Institute of Microbial Technology (IMTECH), Sector-39, Chandigarh 160039 (India); Pant, B.D. [Central Electronics Engineering Research Institute, Pilani, Rajasthan (India); Tripathi, S.K. [Centre of Advanced Studies in Physics, Punjab University, Sector-14, Chandigarh 160014 (India); Kaur, Inderpreet; Bharadwaj, Lalit M. [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India)

    2012-08-15

    In nanotechnology, carbon nanotubes are evolving as 'hot spot' due to their applications as most sensitive biosensors. Thus, study of effect of biomolecular interaction is prerequisite for their electrical application in biosensors and bioelectronics. Here, we have explored this effect on electrical properties of carbon nanotubes with DNA as a model biomolecule. A stable conjugate of carbon nanotubes with DNA is formed via covalent methodology employing quantum dot as fluoropore and characterized with various spectroscopic, fluoroscopic and microscopic techniques. CNT-DNA adduct showed decreased transconductance (from 614.46 {mu}S to 1.34 {mu}S) and shift of threshold voltage (from -0.85 V to 2.5 V) due to change in Schottky barriers at metal-nanotube contact. In addition, decrease in hole mobility (from 4.46 Multiplication-Sign 10{sup 6} to 9.72 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1}) and increase in ON-linear resistance (from 74 k Ohm-Sign to 0.44 M Ohm-Sign ) conclude large change in device parameters. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. -- Graphical abstract: Carbon nanotubes are interfaced with DNA via covalent interactions and characterized with spectroscopic, fluoroscopic and microscopic techniques. Electrical characterization of this stable SWNT-DNA conjugate shows decreased transconductance and shift of threshold voltage towards positive gate voltages. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential

  14. Recent development of carbon nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Yamabe, Tokio [Div. of Molecular Engineering, Kyoto Univ. (Japan); [Inst. for Fundamental Chemistry, Kyoto (Japan)

    1995-03-15

    Recent developments of carbon nanotubes are reviewed. Analytical solutions for the electronic structure of carbon nanotube on the basis of thight-binding approximation are presented and interpreted using the concepts of crystal orbital. The electronic properties of actual carbon nanotubes are presented. The electronic structures of carbon nanotubes in the presence of magnetic fiels are also summerized. (orig.)

  15. Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

    International Nuclear Information System (INIS)

    Majidi, R.; Ghafoori Tabrizi, K.; Jalili, S.

    2009-01-01

    The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.

  16. Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, R. [Department of Physics, Shahid Beheshti University, Evin, Tehran 19839-63113 (Iran, Islamic Republic of); Ghafoori Tabrizi, K., E-mail: K-TABRIZI@sbu.ac.i [Department of Physics, Shahid Beheshti University, Evin, Tehran 19839-63113 (Iran, Islamic Republic of); Jalili, S. [Department of Chemistry, K.N. Toosi University of Technology, Tehran 16315-1618 (Iran, Islamic Republic of)

    2009-11-01

    The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.

  17. Graphene-based field-effect transistor biosensors

    Science.gov (United States)

    Chen; , Junhong; Mao, Shun; Lu, Ganhua

    2017-06-14

    The disclosure provides a field-effect transistor (FET)-based biosensor and uses thereof. In particular, to FET-based biosensors using thermally reduced graphene-based sheets as a conducting channel decorated with nanoparticle-biomolecule conjugates. The present disclosure also relates to FET-based biosensors using metal nitride/graphene hybrid sheets. The disclosure provides a method for detecting a target biomolecule in a sample using the FET-based biosensor described herein.

  18. Optimizing the e-beam profile of a single carbon nanotube field emission device for electric propulsion systems

    Directory of Open Access Journals (Sweden)

    Juliano Fujioka Mologni

    2010-04-01

    Full Text Available Preliminary studies on field emission (FE arrays comprised of carbon nanotubes (CNT as an electron source for electric propulsion system show remarkably promising results. Design parameters for a carbon nanotube (CNT field-emission device operating on triode configuration were numerically simulated and optimized in order to enhance the e-beam focusing quality. An additional focus gate (FG was integrated to the device to control the profile of the emitted e-beam. An axisymmetric finite element model was developed to calculate the electric field distribution on the vacuum region and a modified Fowler-Nordheim (FN equation was used to evaluate the current density emission and the effective emitter area. Afterward, a FE simulation was employed in order to calculate the trajectory of the emitted electrons and define the electron-optical properties of the e-beam. The integration of the FG was fully investigated via computational intelligence techniques. The best performance device according to our simulations presents a collimated e-beam profile that suits well for field emission displays, magnetic field detection and electron microscopy. The automated computational design tool presented in this study strongly benefits the robust design of integrated electron-optical systems for vacuum field emission applications, including electrodynamic tethering and electric propulsion systems.

  19. Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes.

    Science.gov (United States)

    Barzola-Quiquia, J; Klingner, N; Krüger, J; Molle, A; Esquinazi, P; Leonhardt, A; Martínez, M T

    2012-01-13

    We report on the electrical transport properties of single multiwall carbon nanotubes with and without an iron filling as a function of temperature and magnetic field. For the iron filled nanotubes the magnetoresistance shows a magnetic behavior induced by iron, which can be explained by taking into account a contribution of s-d hybridization. In particular, ferromagnetic-like hysteresis loops were observed up to 50 K for the iron filled multiwall carbon nanotubes. The magnetoresistance shows quantum interference phenomena such as universal conductance fluctuations and weak localization effects.

  20. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

    Science.gov (United States)

    Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

    2017-09-21

    Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

  1. Proton migration mechanism for the instability of organic field-effect transistors

    NARCIS (Netherlands)

    Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.

    2009-01-01

    During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on

  2. Functionalization of carbon nanotubes with silver clusters

    International Nuclear Information System (INIS)

    Cveticanin, Jelena; Krkljes, Aleksandra; Kacarevic-Popovic, Zorica; Mitric, Miodrag; Rakocevic, Zlatko; Trpkov, Djordje; Neskovic, Olivera

    2010-01-01

    In this paper, an advanced method of one-step functionalization of single and multi walled carbon nanotubes (SWCNTs and MWCNTs) using γ-irradiation was described. Two synthesis procedures, related with different reduction species, were employed. For the first time, poly(vinyl alcohol) PVA is successfully utilized as a source to reduce silver (Ag) metal ions without having any additional reducing agents to obtain Ag nanoparticles on CNTs. The decoration of carbon nanotubes with Ag nanoparticles takes place through anchoring of (PVA) on nanotube's surface. Optical properties of as-prepared samples and mechanism responsible for the functionalization of carbon nanotubes were investigated using UV-vis and FTIR spectroscopy, respectively. Decorated carbon nanotubes were visualized using microscopic techniques: transmission electron microscopy and scanning tunneling microscopy. Also, the presence of Ag on the nanotubes was confirmed using energy dispersive X-ray spectroscopy. This simple and effective method of making a carbon nanotube type of composites is of interest not only for an application in various areas of technology and biology, but for investigation of the potential of radiation technology for nanoengineering of materials.

  3. Near-field radiation between graphene-covered carbon nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Richard Z.; Liu, Xianglei; Zhang, Zhuomin M., E-mail: zhuomin.zhang@me.gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-05-15

    It has been shown that at small separation distances, thermal radiation between hyperbolic metamaterials is enhanced over blackbodies. This theoretical study considers near-field radiation when graphene is covered on the surfaces of two semi-infinite vertically aligned carbon nanotube (VACNT) arrays separated by a sub-micron vacuum gap. Doped graphene is found to improve photon tunneling in a broad hyperbolic frequency range, due to the interaction with graphene-graphene surface plasmon polaritons (SPP). In order to elucidate the SPP resonance between graphene on hyperbolic substrates, vacuum-suspended graphene sheets separated by similar gap distances are compared. Increasing the Fermi energy through doping shifts the spectral heat flux peak toward higher frequencies. Although the presence of graphene on VACNT does not offer huge near-field heat flux enhancement over uncovered VACNT, this study identifies conditions (i.e., gap distance and doping level) that best utilize graphene to augment near-field radiation. Through the investigation of spatial Poynting vectors, heavily doped graphene is found to increase penetration depths in hyperbolic modes and the result is sensitive to the frequency regime. This study may have an impact on designing carbon-based vacuum thermophotovoltaics and thermal switches.

  4. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñ oz, Enrique; Schwingenschlö gl, Udo

    2017-01-01

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green's function method. The influence of the surface termination

  5. Bimolecular recombination in ambipolar organic field effect transistors

    NARCIS (Netherlands)

    Charrier, D. S. H.; de Vries, T.; Mathijssen, S. G. J.; Geluk, E. -J.; Smits, E. C. P.; Kemerink, M.; Janssen, R. A. J.

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron-hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  6. Bimolecular recombination in ambipolar organic field effect transistors

    NARCIS (Netherlands)

    Charrier, D.S.H.; Vries, T. de; Mathijssen, S.G.J.; Geluk, E.-J.; Smits, E.C.P.; Kemerink, M.; Janssen, R.A.J.

    2009-01-01

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  7. Durable chemical sensors based on field-effect transistors

    NARCIS (Netherlands)

    Reinhoudt, David

    1995-01-01

    The design of durable chemical sensors based on field-effect transistors (FETs) is described. After modification of an ion-sensitive FET (ISFET) with a polysiloxane membrane matrix, it is possible to attach all electroactive components covalently. Preliminary results of measurements with a

  8. Charge transport in disordered organic field-effect transistors

    NARCIS (Netherlands)

    Tanase, Cristina; Blom, Paul W.M.; Meijer, Eduard J.; Leeuw, Dago M. de; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

    2002-01-01

    The transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is

  9. Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

    Directory of Open Access Journals (Sweden)

    Xinge Yu

    2012-06-01

    Full Text Available Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.

  10. Carbon Nanotubes Advanced Topics in the Synthesis, Structure, Properties and Applications

    CERN Document Server

    Jorio, Ado; Dresselhaus, Mildred S

    2008-01-01

    The carbon nanotubes field has evolved substantially since the publication of the bestseller "Carbon Nanotubes: Synthesis, Structure, Properties and Applications". The present volume builds on the generic aspects of the aforementioned book, which emphasizes the fundamentals, with the new volume emphasizing areas that have grown rapidly since the first volume, guiding future directions where research is needed and highlighting applications. The volume also includes an emphasis on areas like graphene, other carbon-like and other tube-like materials because these fields are likely to affect and influence developments in nanotubes in the next 5 years.

  11. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

    Science.gov (United States)

    Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

    2015-08-01

    Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

  12. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  13. Electronic structure and field emission properties of nitrogen doped graphene nano-flakes (GNFs:N) and carbon nanotubes (CNTs:N)

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

    2016-09-01

    Highlights: • Nitrogen doped graphene nano-flakes (GNFs:N) and carbon nano-tubes (CNTs:N) are used to study the electronic/bonding structure along with their defects state. • The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy used for the study of the defects states of CNTs:N than GNFs:N. • The electron field emission result shows that the turn on electric field is lower in case of CNTs:N than GNFs:N. • All results are good agreement with XANES and the results obtained from Raman spectra. - Abstract: Substitution of hetero-atom doping is a promising route to modulate the outstanding material properties of carbon nanotubes and graphene for customized applications. Nitrogen-doping has been introduced to ensure tunable work-function, enhanced n-type carrier concentration, diminished surface energy, and manageable polarization. Along with the promising assessment of N-doping effects, research on the N-doped carbon based composite structures is emerging for the synergistic integration with various functional materials. Nitrogen undoped/doped graphene nano-flakes (GNFs/GNFs:N) and multiwall carbon nano-tubes (MWCNTs/MWCNTs:N) are used for comparative study of their electronic/bonding structure along with their defects state. X-ray absorption near edge structure (XANES) spectroscopy shows that the GNFs:N produce mainly pyridine like structure; whereas MWCNTs:N shows graphitic nitrogen atoms are attached with the carbon lattice. The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy shows that the defects is higher in MWCNTs:N than GNFs:N. The electron field emission result shows that the turn on electric field is lower (higher electron emission current) in case of MWCNTs:N than GNFs:N and are good agreement with XANES and the results obtained from Raman spectra.

  14. Density controlled carbon nanotube array electrodes

    Science.gov (United States)

    Ren, Zhifeng F [Newton, MA; Tu, Yi [Belmont, MA

    2008-12-16

    CNT materials comprising aligned carbon nanotubes (CNTs) with pre-determined site densities, catalyst substrate materials for obtaining them and methods for forming aligned CNTs with controllable densities on such catalyst substrate materials are described. The fabrication of films comprising site-density controlled vertically aligned CNT arrays of the invention with variable field emission characteristics, whereby the field emission properties of the films are controlled by independently varying the length of CNTs in the aligned array within the film or by independently varying inter-tubule spacing of the CNTs within the array (site density) are disclosed. The fabrication of microelectrode arrays (MEAs) formed utilizing the carbon nanotube material of the invention is also described.

  15. A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Dumitru, L. M.; Manoli, K.; Magliulo, M.; Torsi, L., E-mail: luisa.torsi@uniba.it [Department of Chemistry, University of Bari “Aldo Moro”, Via Orabona 4, Bari I-70126 (Italy); Ligonzo, T. [Department of Physics, University of Bari “Aldo Moro”, Via Orabona 4, Bari I-70126 (Italy); Palazzo, G. [Department of Chemistry, University of Bari “Aldo Moro”, Via Orabona 4, Bari I-70126 (Italy); Center of Colloid and Surface Science—CSGI—Bari Unit, Via Orabona 4, Bari I-70126 (Italy)

    2015-01-01

    A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

  16. Electron field emission characteristics of carbon nanotube on tungsten tip

    International Nuclear Information System (INIS)

    Phan Ngoc Hong; Bui Hung Thang; Nguyen Tuan Hong; Phan Ngoc Minh; Lee, Soonil

    2009-01-01

    Electron field emission characteristic of carbon nanotubes on tungsten tip was investigated in 2x10 -6 Torr vacuum. The measurement results showed that the CNTs/W tip could emit electron at 0.7 V/μm (nearly 10 times lower than that of the W tip itself) and reach up to 26 μA at the electric field of 1 V/μm. The emission characteristic follows the Fowler-Nordheim mechanism. Analysis of the emission characteristic showed that the CNTs/W tip has a very high value of field enhancement factor (β = 4.1 x 10 4 cm -1 ) that is much higher than that of the tungsten tip itself. The results confirmed the excellent field emission behavior of the CNTs materials and the CNTs/W tip is a prospective candidate for advanced electron field emitter.

  17. Multiscale Modeling with Carbon Nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Maiti, A

    2006-02-21

    Technologically important nanomaterials come in all shapes and sizes. They can range from small molecules to complex composites and mixtures. Depending upon the spatial dimensions of the system and properties under investigation computer modeling of such materials can range from equilibrium and nonequilibrium Quantum Mechanics, to force-field-based Molecular Mechanics and kinetic Monte Carlo, to Mesoscale simulation of evolving morphology, to Finite-Element computation of physical properties. This brief review illustrates some of the above modeling techniques through a number of recent applications with carbon nanotubes: nano electromechanical sensors (NEMS), chemical sensors, metal-nanotube contacts, and polymer-nanotube composites.

  18. Carbon nanotube junctions and devices

    NARCIS (Netherlands)

    Postma, H.W.Ch.

    2001-01-01

    In this thesis Postma presents transport experiments performed on individual single-wall carbon nanotubes. Carbon nanotubes are molecules entirely made of carbon atoms. The electronic properties are determined by the exact symmetry of the nanotube lattice, resulting in either metallic or

  19. Charge-density depinning at metal contacts of graphene field-effect transistors

    OpenAIRE

    Nouchi, Ryo; Tanigaki, Katsumi

    2010-01-01

    An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer characteristics, and show that the distortion is caused by metal-graphene contacts with no charge-density pinning effect. The pinning effect, where the gate voltage cannot tune the charge density of graphene at the metal electrodes, has been experimentally observed; h...

  20. Purification of carbon nanotubes through an electric field near the arranged microelectrodes

    International Nuclear Information System (INIS)

    Shim, Hyung Cheoul; Lee, Hyung Woo; Yeom, Sujin; Kwak, Yoon Keun; Lee, Seung S; Kim, Soo Hyun

    2007-01-01

    In this work, we attempt to purify multi-walled carbon nanotubes (MWNTs) using electrophoresis induced by the application of an AC electric field to a set of microelectrodes in a microliquid channel. This purifying method is different from conventional methods based on chemical processes. It was observed that most of the MWNTs could pass along the microliquid channel without attaching to the electrode under specific conditions of 1 kHz, at 0.2 V rms μm -1 . On the other hand, the majority of the carbon impurities attached to the electrodes under identical conditions. Field emission scanning electron microscopy (FESEM) images and Raman spectra confirm that this condition is beneficial for removing carbon impurities. The proposed approach has potential applicability in the development of microdevices that can simultaneously perform the purification and fabrication of MWNTs

  1. Probing organic field effect transistors in situ during operation using SFG.

    Science.gov (United States)

    Ye, Hongke; Abu-Akeel, Ashraf; Huang, Jia; Katz, Howard E; Gracias, David H

    2006-05-24

    In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs.

  2. Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

    International Nuclear Information System (INIS)

    Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

    2004-01-01

    Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

  3. Carbon Nanotubes Hybrid Hydrogels in Drug Delivery: A Perspective Review

    Science.gov (United States)

    Hampel, Silke; Spizzirri, Umile Gianfranco; Parisi, Ortensia Ilaria; Picci, Nevio; Iemma, Francesca

    2014-01-01

    The use of biologics, polymers, silicon materials, carbon materials, and metals has been proposed for the preparation of innovative drug delivery devices. One of the most promising materials in this field are the carbon-nanotubes composites and hybrid materials coupling the advantages of polymers (biocompatibility and biodegradability) with those of carbon nanotubes (cellular uptake, stability, electromagnatic, and magnetic behavior). The applicability of polymer-carbon nanotubes composites in drug delivery, with particular attention to the controlled release by composites hydrogel, is being extensively investigated in the present review. PMID:24587993

  4. Topological phase diagram of superconducting carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Milz, Lars; Marganska-Lyzniak, Magdalena; Grifoni, Milena [Institut I - Theoretische Physik Universitaet Regensburg (Germany)

    2016-07-01

    The topological superconducting phase diagram of superconducting carbon nanotubes is discussed. Under the assumption of a short-ranged pairing potential, there are two spin-singlet states: an s-wave and an exotic p + ip-wave that are possible because of the special structure of the honeycomb lattice. The consequences for the possible presence of Majorana edge states in carbon nanotubes are addressed. In particular, regions in the magnetic field-chemical potential plane possibly hosting localized Majorana modes are discussed.

  5. Role of interfacial effects in carbon nanotube/epoxy nanocomposite behavior.

    Science.gov (United States)

    Pécastaings, G; Delhaès, P; Derré, A; Saadaoui, H; Carmona, F; Cui, S

    2004-09-01

    The interfacial effects are critical to understand the nanocomposite behavior based on polymer matrices. These effects are dependent upon the morphology of carbon nanotubes, the type of used polymer and the processing technique. Indeed, we show that the different parameters, as the eventual surfactant use, the ultrasonic treatment and shear mixing have to be carefully examined, in particular, for nanotube dispersion and their possible alignment. A series of multiwalled nanotubes (MWNT) have been mixed with a regular epoxy resin under a controlled way to prepare nanocomposites. The influence of nanotube content is examined through helium bulk density, glass transition temperature of the matrix and direct current electrical conductivity measurements. These results, including the value of the percolation threshold, are analyzed in relationship with the mesostructural organization of these nanotubes, which is observed by standard and conductive probe atomic force microscopy (AFM) measurements. The wrapping effect of the organic matrix along the nanotubes is evidenced and analyzed to get a better understanding of the final composite characteristics, in particular, for eventually reinforcing the matrix without covalent bonding.

  6. Carbon nanotubes: properties, synthesis, purification, and medical applications

    Science.gov (United States)

    2014-01-01

    Current discoveries of different forms of carbon nanostructures have motivated research on their applications in various fields. They hold promise for applications in medicine, gene, and drug delivery areas. Many different production methods for carbon nanotubes (CNTs) have been introduced; functionalization, filling, doping, and chemical modification have been achieved, and characterization, separation, and manipulation of individual CNTs are now possible. Parameters such as structure, surface area, surface charge, size distribution, surface chemistry, and agglomeration state as well as purity of the samples have considerable impact on the reactivity of carbon nanotubes. Otherwise, the strength and flexibility of carbon nanotubes make them of potential use in controlling other nanoscale structures, which suggests they will have a significant role in nanotechnology engineering. PMID:25170330

  7. Carbon nanotubes: properties, synthesis, purification, and medical applications

    Science.gov (United States)

    Eatemadi, Ali; Daraee, Hadis; Karimkhanloo, Hamzeh; Kouhi, Mohammad; Zarghami, Nosratollah; Akbarzadeh, Abolfazl; Abasi, Mozhgan; Hanifehpour, Younes; Joo, Sang Woo

    2014-08-01

    Current discoveries of different forms of carbon nanostructures have motivated research on their applications in various fields. They hold promise for applications in medicine, gene, and drug delivery areas. Many different production methods for carbon nanotubes (CNTs) have been introduced; functionalization, filling, doping, and chemical modification have been achieved, and characterization, separation, and manipulation of individual CNTs are now possible. Parameters such as structure, surface area, surface charge, size distribution, surface chemistry, and agglomeration state as well as purity of the samples have considerable impact on the reactivity of carbon nanotubes. Otherwise, the strength and flexibility of carbon nanotubes make them of potential use in controlling other nanoscale structures, which suggests they will have a significant role in nanotechnology engineering.

  8. Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

    NARCIS (Netherlands)

    Spijkman, M.; Smits, E.C.P.; Cillessen, J.F.M.; Biscarini, F.; Blom, P.W.M.; Leeuw, D.M. de

    2011-01-01

    The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum detectable change in electrochemical potential according to the Nernst equation. Here we demonstrate a transducer based on a ZnO dual-gate field-effect transistor that

  9. Liquid crystalline order of carbon nanotubes

    Science.gov (United States)

    Georgiev, Georgi; Ahlawat, Aditya; Mulkern, Brian; Doyle, Robert; Mongeau, Jennifer; Ogilvie, Alex

    2007-03-01

    Topological defects formed during phase transitions in liquid crystals provide a direct proof of the standard Cosmological model and are direct links to the Early Universe. On the other hand in Nanotechnology, carbon nanotubes can be manipulated and oriented directly by changing the liquid crystalline state of the nanotubes, in combination with organic liquid crystals. Currently there are no nano-assemblers, which makes the liquid crystal state of the nanotubes, one of the few ways of controlling them. We show the design of a fast and efficient polarized light ellipsometric system (a new modification of previous optical systems) that can provide fast quantitative real time measurements in two dimensions of the formation of topological defects in liquid crystals during phase transitions in lab settings. Our aim is to provide fundamental information about the formation of optically anisotropic structures in liquid crystals and the orientation of carbon nanotubes in electric field.

  10. Mirage effect from thermally modulated transparent carbon nanotube sheets.

    Science.gov (United States)

    Aliev, Ali E; Gartstein, Yuri N; Baughman, Ray H

    2011-10-28

    The single-beam mirage effect, also known as photothermal deflection, is studied using a free-standing, highly aligned carbon nanotube aerogel sheet as the heat source. The extremely low thermal capacitance and high heat transfer ability of these transparent forest-drawn carbon nanotube sheets enables high frequency modulation of sheet temperature over an enormous temperature range, thereby providing a sharp, rapidly changing gradient of refractive index in the surrounding liquid or gas. The advantages of temperature modulation using carbon nanotube sheets are multiple: in inert gases the temperature can reach > 2500 K; the obtained frequency range for photothermal modulation is ~100 kHz in gases and over 100 Hz in high refractive index liquids; and the heat source is transparent for optical and acoustical waves. Unlike for conventional heat sources for photothermal deflection, the intensity and phase of the thermally modulated beam component linearly depends upon the beam-to-sheet separation over a wide range of distances. This aspect enables convenient measurements of accurate values for thermal diffusivity and the temperature dependence of refractive index for both liquids and gases. The remarkable performance of nanotube sheets suggests possible applications as photo-deflectors and for switchable invisibility cloaks, and provides useful insights into their use as thermoacoustic projectors and sonar. Visibility cloaking is demonstrated in a liquid.

  11. Plasma excitations in a single-walled carbon nanotube

    Indian Academy of Sciences (India)

    The effect of different uniform transverse external magnetic fields in plasma frequency when propagated parallel to the surface of the single-walled metallic carbon nanotubes is studied. The classical electrodynamics as well as Maxwell's equations are used in the calculations. Equations are developed for both short- and ...

  12. Characterization of carbon nanotubes grown on Fe70Pd30 film

    International Nuclear Information System (INIS)

    Khan, Zishan H.; Islam, S.S.; Kung, S.C.; Perng, T.P.; Khan, Samina; Tripathi, K.N.; Agarwal, Monika; Zulfequar, M.; Husain, M.

    2006-01-01

    Carbon nanotubes have been synthesized by a LPCVD on nanocrystalline Fe-Pd film. CNTs are grown for 30min and 1h respectively. From the SEM images, the diameter of these nanotubes varies from 40-80nm and the length is several micro-meter approximately. TEM observations suggest that the CNTs are multi-walled and the structure changes from ordinary geometry of CNTs to bamboo shaped. We have observed sharp G and D bands in the Raman spectra of these carbon nanotubes. Higher D-band is observed for the carbon nanotubes grown for longer time (1h), showing that these nanotubes contain more amorphous carbon. The field emission measurements for these CNTs are also performed. For CNTs grown for longer time (1h), a superior turn-on field of 4.88V/μm (when the current density achieves 10μA/cm 2 ) is obtained and a current density of 29.36mA/cm 2 can be generated at 9.59V/μm

  13. Cylindrical Field Effect Transistor: A Full Volume Inversion Device

    KAUST Repository

    Fahad, Hossain M.

    2010-01-01

    inversion in the body. However, these devices are still limited by lithographic and processing challenges making them unsuitable for commercial production. This thesis explores a unique device structure called the CFET (Cylindrical Field Effect Transistors

  14. Towards a Carbon Nanotube Intermodulation Product Sensor for Nonlinear Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Mitchell B. Lerner

    2015-01-01

    Full Text Available It is critically important in designing RF receiver front ends to handle high power jammers and other strong interferers. Instead of blocking incoming energy or dissipating it as heat, we investigate the possibility of redirecting that energy for harvesting and storage. The approach is based on channelizing a high power signal into a previously unknown circuit element which serves as a passive intermodulation device. This intermodulation component must produce a hysteretic current-voltage curve to be useful as an energy harvester. Here we demonstrate a method by which carbon nanotube transistors produce the necessary hysteretic I-V curves. Such devices can be tailored to the desired frequency by introducing functional groups to the nanotubes. These effects controllably enhance the desired behavior, namely, hysteretic nonlinearity in the transistors’ I-V characteristic. Combining these components with an RF energy harvester may one day enable the reuse of inbound jamming energy for standard back end radio components.

  15. Nature of size effects in compact models of field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Torkhov, N. A., E-mail: trkf@mail.ru [Tomsk State University, Tomsk 634050 (Russian Federation); Scientific-Research Institute of Semiconductor Devices, Tomsk 634050 (Russian Federation); Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation); Babak, L. I.; Kokolov, A. A.; Salnikov, A. S.; Dobush, I. M. [Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation); Novikov, V. A., E-mail: novikovvadim@mail.ru; Ivonin, I. V. [Tomsk State University, Tomsk 634050 (Russian Federation)

    2016-03-07

    Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of the equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.

  16. Carbon nanotube functionalized with dodecylamine for the effective dispersion in solvents

    International Nuclear Information System (INIS)

    Ferreira, Filipe Vargas; Francisco, Wesley; Menezes, Beatriz Rossi Canuto de; Cividanes, Luciana De Simone; Coutinho, Aparecido dos Reis; Thim, Gilmar Patrocínio

    2015-01-01

    Highlights: • The functionalized carbon nanotubes exhibit the formation of a shell structure with nanotubes in the center. • Graphitic structures (sp 2 ) reduce simultaneously with the change of textures on the surface of carbon nanotubes. • The nonpolar chain of dodecylamine improves the carbon nanotube interaction with the nonpolar solvent. - Abstract: In this work, it was performed a dispersion study of carbon nanotubes (CNTs) functionalized with carboxylic and alkane groups in various solvents. CNT was functionalized using H 2 SO 4 /HNO 3 and subsequently functionalized by dodecylamine (DDA). Fourier transform infrared, X-ray photoelectron spectroscopy, thermogravimetric analysis and transmission electron microscopy were used to characterize the CNTs at each step of the surface modification. The dispersion state of CNTs in the solvents was evaluated by Optical microscopy and visual observations. The evaluation of the solvent influence itself was also made. Results confirmed the presence of oxygen-containing and alkane groups on CNTs surfaces. The dispersion stability was strongly dependent on the solvent and carbon nanotubes surface interactions, which can vary with the chemical nature of the solvent. The study of the surface modifications and the degree of carbon nanotubes dispersion is relevant to enhance the full understanding of its applications.

  17. Hydrotalcites: a highly efficient ecomaterial for effluent treatment originated from carbon nanotubes chemical processing

    Energy Technology Data Exchange (ETDEWEB)

    Alves, O L; Stefani, D; Parizotto, N V; Filho, A G Souza, E-mail: oalves@iqm.unicamp.br [Solid State Chemistry Laboratory, Institute of Chemistry, University of Campinas - UNICAMP, P. O. Box 6154, 13083-970, Campinas-SP (Brazil)

    2011-07-06

    It has been reported that a mixture of carboxylated carbonaceous fragments (CCFs), so called oxidation debris, are generated during carbon nanotubes chemical processing using oxidant agents such as HNO{sub 3}. The elimination of these fragments from carbon nanotubes surface has been point out to be a crucial step for an effective functionalization of the nanotubes as well as for improving the material. However, this process can introduce a potential environmental problem related water contamination because these CCFs can be viewed as a mixture of carbonaceous polyaromatic systems similar to humic substances and dissolved organic matter (DOM). The negative aspects of humic substances and DOM to water quality and wastewater treatment are well known. Since carbon nanotubes industry expands at high rates it is expected that effluent containing oxidation debris will increase since HNO{sub 3} chemical processing is the most applied method for purification and functionalization of carbon nanotubes. In this work, we have demonstrated that Hydrotalcites (HT) are highly efficient to remove oxidation debris from effluent solution originated from HNO{sub 3}-treated multiwalled carbon nanotubes. The strategy presented here is a contribution towards green chemistry practices and life cycle studies in carbon nanotubes field.

  18. Field Emission from Carbon Nanostructures

    Directory of Open Access Journals (Sweden)

    Filippo Giubileo

    2018-03-01

    Full Text Available Field emission electron sources in vacuum electronics are largely considered to achieve faster response, higher efficiency and lower energy consumption in comparison with conventional thermionic emitters. Carbon nanotubes had a leading role in renewing attention to field emission technologies in the early 1990s, due to their exceptional electron emitting properties enabled by their large aspect ratio, high electrical conductivity, and thermal and chemical stability. In the last decade, the search for improved emitters has been extended to several carbon nanostructures, comprising carbon nanotubes, either individual or films, diamond structures, graphitic materials, graphene, etc. Here, we review the main results in the development of carbon-based field emitters.

  19. Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

    Science.gov (United States)

    Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

    2012-04-07

    Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

  20. The study of explosive emission from carbon nanotubes

    International Nuclear Information System (INIS)

    Korenev, Sergey

    2002-01-01

    The carbon nanotubes (CNT) found applications for high density current electron emitters. The main interest for forming of high current electron beams using CNT is high concentration of electrical field on the nanotubes and high value of yield by electrons for field emission. The experimental results for time processes of forming cathode plasma and extraction of electron beam are presented in the report

  1. Controlled Deposition and Alignment of Carbon Nanotubes

    Science.gov (United States)

    Smits, Jan M. (Inventor); Wincheski, Russell A. (Inventor); Patry, JoAnne L. (Inventor); Watkins, Anthony Neal (Inventor); Jordan, Jeffrey D. (Inventor)

    2012-01-01

    A carbon nanotube (CNT) attraction material is deposited on a substrate in the gap region between two electrodes on the substrate. An electric potential is applied to the two electrodes. The CNT attraction material is wetted with a solution defined by a carrier liquid having carbon nanotubes (CNTs) suspended therein. A portion of the CNTs align with the electric field and adhere to the CNT attraction material. The carrier liquid and any CNTs not adhered to the CNT attraction material are then removed.

  2. Optical properties of carbon nanotubes

    Science.gov (United States)

    Chen, Gugang

    This thesis addresses the optical properties of novel carbon filamentary nanomaterials: single-walled carbon nanotubes (SWNTs), double-walled carbon nanotubes (DWNTs), and SWNTs with interior C60 molecules ("peapods"). Optical reflectance spectra of bundled SWNTs are discussed in terms of their electronic energy band structure. An Effective Medium Model for a composite material was found to provide a reasonable description of the spectra. Furthermore, we have learned from optical absorption studies of DWNTs and C60-peapods that the host tube and the encapsulant interact weakly; small shifts in interband absorption structure were observed. Resonant Raman scattering studies on SWNTs synthesized via the HiPCO process show that the "zone-folding" approximation for phonons and electrons works reasonably well, even for small diameter (d effect, rather than the vdW interaction. Finally, we studied the chemical doping of DWNTs, where the dopant (Br anions) is chemically bound to the outside of the outer tube. The doped DWNT system is a model for a cylindrical molecular capacitor. We found experimentally that 90% of the positive charge resides on the outer tube, so that most of electric field on the inner tube is screened, i.e., we have observed a molecular Faraday cage effect. A self-consistent theoretical model in the tight-binding approximation with a classical electrostatic energy term is in good agreement with our experimental results.

  3. Determination of the effective Young's modulus of vertically aligned carbon nanotube arrays: a simple nanotube-based varactor

    International Nuclear Information System (INIS)

    Olofsson, Niklas; Eriksson, Anders; Ek-Weis, Johan; Campbell, Eleanor E B; Idda, Tonio

    2009-01-01

    The electromechanical properties of arrays of vertically aligned multiwalled carbon nanotubes were studied in a parallel plate capacitor geometry. The electrostatic actuation was visualized using both optical microscopy and scanning electron microscopy, and highly reproducible behaviour was achieved for actuation voltages below the pull-in voltage. The walls of vertically aligned carbon nanotubes behave as solid cohesive units. The effective Young's modulus for the carbon nanotube arrays was determined by comparing the actuation results with the results of electrostatic simulations and was found to be exceptionally low, of the order of 1-10 MPa. The capacitance change and Q-factor were determined by measuring the frequency dependence of the radio-frequency transmission. Capacitance changes of over 20% and Q-factors in the range 100-10 were achieved for a frequency range of 0.2-1.5 GHz.

  4. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

    Science.gov (United States)

    Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad; Kulkarni, Jaydeep P; Wang, Congjun; Shim, Moonsub; Roy, Kaushik; Alam, Muhammad A; Rogers, John A

    2008-07-24

    The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of

  5. Top contact organic field effect transistors fabricated using a photolithographic process

    International Nuclear Information System (INIS)

    Wang Hong; Peng Ying-Quan; Ji Zhuo-Yu; Shang Li-Wei; Liu Xing-Hua; Liu Ming

    2011-01-01

    This paper proposes an effective method of fabricating top contact organic field effect transistors by using a photolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated successfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

    Science.gov (United States)

    Alivov, Yahya; Funke, Hans; Nagpal, Prashant

    2015-07-01

    Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

  7. Graphene Field Effect Transistor-Based Detectors for Detection of Ionizing Radiation

    International Nuclear Information System (INIS)

    Jovanovic, Igor; Cazalas, Edward; Childres, I.; Patil, A.; Koybasi, O.; Chen, Y-P.

    2013-06-01

    We present the results of our recent efforts to develop novel ionizing radiation sensors based on the nano-material graphene. Graphene used in the field effect transistor architecture could be employed to detect the radiation-induced charge carriers produced in undoped semiconductor absorber substrates, even without the need for charge collection. The detection principle is based on the high sensitivity of graphene to ionization-induced local electric field perturbations in the electrically biased substrate. We experimentally demonstrated promising performance of graphene field effect transistors for detection of visible light, X-rays, gamma-rays, and alpha particles. We propose improved detector architectures which could result in a significant improvement of speed necessary for pulsed mode operation. (authors)

  8. Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

    KAUST Repository

    Zou, Jianping; Zhang, Kang; Li, Jingqi; Zhao, Yongbiao; Wang, Yilei; Pillai, Suresh Kumar Raman; Volkan Demir, Hilmi; Sun, Xiaowei; Chan-Park, Mary B.; Zhang, Qing

    2015-01-01

    Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

  9. Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

    KAUST Repository

    Zou, Jianping

    2015-06-29

    Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

  10. Filled carbon nanotubes in biomedical imaging and drug delivery.

    Science.gov (United States)

    Martincic, Markus; Tobias, Gerard

    2015-04-01

    Carbon nanotubes have been advocated as promising candidates in the biomedical field in the areas of diagnosis and therapy. In terms of drug delivery, the use of carbon nanotubes can overcome some limitations of 'free' drugs by improving the formulation of poorly water-soluble drugs, allowing targeted delivery and even enabling the co-delivery of two or more drugs for combination therapy. Two different approaches are currently being explored for the delivery of diagnostic and therapeutic agents by carbon nanotubes, namely attachment of the payload to the external sidewalls or encapsulation into the inner cavities. Although less explored, the latter confers additional stability to the chosen diagnostic or therapeutic agents, and leaves the backbone structure of the nanotubes available for its functionalization with dispersing and targeting moieties. Several drug delivery systems and diagnostic agents have been developed in the last years employing the inner tubular cavities of carbon nanotubes. The research discussed in this review focuses on the use of carbon nanotubes that contain in their interior drug molecules and diagnosis-related compounds. The approaches employed for the development of such nanoscale vehicles along with targeting and releasing strategies are discussed. The encapsulation of both biomedical contrast agents and drugs inside carbon nanotubes is further expanding the possibilities to allow an early diagnosis and treatment of diseases.

  11. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

    Science.gov (United States)

    Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

    2014-01-01

    Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

  12. Fabrication and mechanical properties of aluminum composite reinforced with functionalized carbon nanotubes

    Science.gov (United States)

    Alavijeh, Elham Zamani; Kokhaei, Saeed; Dehghani, Kamran

    2018-01-01

    Composite aluminum alloy (5000 series) and multi-walled carbon nanotubes (MWCNTs) were made using mechanical alloying, cold press and sintering. The quality of interactions between Al powders and CNTs in the metal matrix composite has a significant effect on mechanical properties. Motivated from the properties of functionalized CNTs, the current study use this material rather than the raw type, because of its reactivity. Besides, a poly-vinyl-alcohol pre-mixing is done, the aim of which is to enhance mixing process. The functionalized carbon nanotubes ware made by chemically method through refluxing with nitric acid. By this method functional groups have been created on CNTs surfaces. 1% and 3% functionalized carbon nanotubes were manufactured using the aforementioned method. To provide unbiased comparisons, 1% and 3% with raw CNTs and pure aluminum is produced with same manner. The numerical experiments affirm the superiority of the functionalized carbon nano-tubes in terms of the relative density and hardness of nanocomposites. As a final activity, the Fourier transformation infrared spectroscopy and field emission scanning electron microscopy techniques were used to characterize the carbon nanotubes and the powders.

  13. Ultrasonication effects on thermal and rheological properties of carbon nanotube suspensions.

    Science.gov (United States)

    Ruan, Binglu; Jacobi, Anthony M

    2012-02-14

    The preparation of nanofluids is very important to their thermophysical properties. Nanofluids with the same nanoparticles and base fluids can behave differently due to different nanofluid preparation methods. The agglomerate sizes in nanofluids can significantly impact the thermal conductivity and viscosity of nanofluids and lead to a different heat transfer performance. Ultrasonication is a common way to break up agglomerates and promote dispersion of nanoparticles into base fluids. However, research reports of sonication effects on nanofluid properties are limited in the open literature. In this work, sonication effects on thermal conductivity and viscosity of carbon nanotubes (0.5 wt%) in an ethylene glycol-based nanofluid are investigated. The corresponding effects on the agglomerate sizes and the carbon nanotube lengths are observed. It is found that with an increased sonication time/energy, the thermal conductivity of the nanofluids increases nonlinearly, with the maximum enhancement of 23% at sonication time of 1,355 min. However, the viscosity of nanofluids increases to the maximum at sonication time of 40 min, then decreases, finally approaching the viscosity of the pure base fluid at a sonication time of 1,355 min. It is also observed that the sonication process not only reduces the agglomerate sizes but also decreases the length of carbon nanotubes. Over the current experimental range, the reduction in agglomerate size is more significant than the reduction of the carbon nanotube length. Hence, the maximum thermal conductivity enhancement and minimum viscosity increase are obtained using a lengthy sonication, which may have implications on application.

  14. Piezoresistive effect of the carbon nanotube yarn embedded axially into the 3D braided composite

    Science.gov (United States)

    Ma, Xin; Cao, Xiaona

    2018-06-01

    A new method for monitoring 3D braided composite structure health in real time by embedding the carbon nanotube yarn, based on its piezoresistivity, in the composite axially has been designed. The experimental system for piezoresistive effect detection of the carbon nanotube yarn in the 3D braided composite was built, and the sensing characteristics has been analyzed for further research. Compared with other structural health monitoring methods, the monitoring technique with carbon nanotubes yarns is more suitable for internal damage detection immediately, in addition the strength of the composite can be increased by embedding carbon nanotubes yarns. This method can also be used for strain sensing, the development of intelligent materials and structure systems.

  15. Alignment of carbon nanotubes in nematic liquid crystals

    NARCIS (Netherlands)

    Schoot, van der P.P.A.M.; Popa-Nita, V.; Kralj, S.

    2008-01-01

    The self-organizing properties of nematic liquid crystals can be used to align carbon nanotubes dispersed in them. Because the nanotubes are so much thinner than the elastic penetration length, the alignment is caused by the coupling of the unperturbed director field to the anisotropic interfacial

  16. Effects of doped copper on electrochemical performance of the raw carbon nanotubes anode

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhanhong; Simard, Benoit [SIMS, National Research Council, 100 Sussex Dr., Ottawa, ON (Canada); Li, Zaifeng [ICPET, National Research Council, 1200 Montreal Road, Ottawa, ON (Canada); Wu, Haoqing [Department of Chemistry, Fudan University, Shanghai 200433 (China)

    2003-07-01

    The raw carbon nanotubes pre-doped with copper are used as anode materials for lithium ion batteries. Constant current discharge and charge tests using the raw carbon nanotubes pre-doped with copper as Li{sup +} storage compounds show lower specific capacities than that of the acid-oxidized carbon nanotubes. The acids play an important role; H{sub 2}SO{sub 4} and HNO{sub 3} can easily permeate through the graphene sheets, then they will make the defects or pores in the graphene sheets, and this reaction can make the expansion of the graphite. Meanwhile, Cu{sup 2+} will diffuse into the pores and onto the outer surfaces of the carbon nanotubes. Cu{sup 2+} can be easily turned into Cu at high temperature in the presence of the carbon nanomaterial. So parts of the pores and the surfaces of the carbon nanotubes will be filled with the Cu atom. Once the space positions of the nanotubes were occupied, lithium cannot intercalate into the pores and onto the outer surface of the carbon nanotubes, thus the doped carbon nanotubes will have a low specific capacity.

  17. Co-sputtered MoRe as carbon nanotube growth-compatible superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Goetz, Karl; Blien, Stefan; Stiller, Peter; Vavra, Ondrej; Mayer, Thomas; Huber, Thomas; Meier, Thomas; Kronseder, Matthias; Strunk, Christoph; Huettel, Andreas [Institute for Experimental and Applied Physics, University of Regensburg (Germany)

    2016-07-01

    Molybdenum rhenium alloys exhibit superconducting transition temperatures up to 15 K as well as high critical current densities. In addition, the thin films are stable under typical carbon nanotube CVD growth conditions, i.e., a hydrogen/methane atmosphere at 900 C, and form good contacts in nanotube overgrowth. This makes them predestined for experiments integrating ''ultraclean'' carbon nanotube devices into coplanar radiofrequency circuits, towards quantum nano-electromechanics and information processing. MoRe thin films are deposited via co-sputtering of two separate targets. The resulting thin film composition and its controllability is verified via XPS spectroscopy both before and after undergoing nanotube growth conditions. The effects of the high temperature process on surface oxides, carbon content, superconducting critical temperature, magnetic field, and current are characterized. Selecting an optimized alloy composition, we define coplanar waveguide resonators, demonstrating resonant behaviour after CVD at f ∼ 3.. 4 GHz and up to Q{sub i} ∼ 5000. Modelling device properties via Mattis-Bardeen theory combined with substrate two-level systems leads to good agreement with the data.

  18. High-performance solution-processed polymer ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

    We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

  19. Mechanochemical treatment of amorphous carbon from brown sphagnum moss for the preparation of carbon nanotubes

    International Nuclear Information System (INIS)

    Onishchenko, D.V.

    2013-01-01

    Under consideration is the mechanism of multiwalled nanotubes formation during mechanical activation of amorphous carbon synthesized by pyrolysis of sphagnum moss. The formation of nanotubes has been shown to take place in the array of carbon particles. A complex study of the sorption characteristics of carbon nanotubes has been carried out. The dependence of the sorption capacity of carbon nanotubes on their storage time, as well as the effect of the process parameters of nanotubes formation on their ability for oxidative modification, is represented. (authors)

  20. Germanium field-effect transistor made from a high-purity substrate

    International Nuclear Information System (INIS)

    Hansen, W.L.; Goulding, F.S.; Haller, E.E.

    1978-11-01

    Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

  1. Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

    CERN Document Server

    Im, Seongil; Kim, Jae Hoon

    2013-01-01

    Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

  2. Group IV nanotube transistors for next generation ubiquitous computing

    KAUST Repository

    Fahad, Hossain M.

    2014-06-04

    Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  3. Effects of gamma radiation on mechanical behavior of fluoropolymers/carbon nanotubes nanocomposites

    International Nuclear Information System (INIS)

    Pozenato, Cristina A.; Scagliusi, Sandra R.; Lugao, Ademar B.

    2015-01-01

    Fluoroelastomers are a elastomers group, which have excellent thermal and mechanical properties and high chemical resistance. They are used in environments to degrade most another polymers. Multiple polymers/carbon nanotubes nanocomposites are related in literature. The aim of this study was process and evaluates the changes in the mechanical properties due to the incorporation of functionalized carbon nanotubes in fluorinated rubbers. The nanocomposite was prepared from an open mill (Cope), with two rolls, with addition of carbon nanotubes of 1%, and Viton® from Dupont. The samples were subjected to gamma radiation using a 60 Co source with doses 5 kGy, 10 kGy, 20 kGy at room temperature and air atmosphere. The effects of incorporation were compared and evaluated. The characterization was made by tensile strength and elongation at break. (author)

  4. Ambipolar phosphorene field effect transistor.

    Science.gov (United States)

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

  5. Surfactant effect on functionalized carbon nanotube coated snowman-like particles and their electro-responsive characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ke; Liu, Ying Dan [Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Choi, Hyoung Jin, E-mail: hjchoi@inha.ac.kr [Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of)

    2012-10-15

    The core–shell structured snowman-like (SL) microparticles coated by functionalized multi-walled carbon nanotube (MWNT) were prepared in the presence of different surfactants including cationic surfactant-cetyl trimethylammonium bromide (CTAB) and anionic surfactant-sodium lauryl sulfate (SDS). The effect of surfactants on adsorption onto SL particles was characterized by scanning electron microscopy (SEM), thermogravimetric analysis (TGA) and conductivity. The cationic surfactant is found to be more effective than anionic surfactant for helping nanotube adsorbed onto microparticle due to the presence of electrostatic interaction between the functionalized MWNT and the surfactant. Furthermore, the MWNT/SL particles dispersed in silicone oil exhibited a typical fibril structure of the electrorheological characteristics under an applied electric field observed by an optical microscope (OM), in which the state of nanotubes wrapped on the particles strongly affects their electro-responsive characteristics.

  6. Surfactant effect on functionalized carbon nanotube coated snowman-like particles and their electro-responsive characteristics

    International Nuclear Information System (INIS)

    Zhang, Ke; Liu, Ying Dan; Choi, Hyoung Jin

    2012-01-01

    The core–shell structured snowman-like (SL) microparticles coated by functionalized multi-walled carbon nanotube (MWNT) were prepared in the presence of different surfactants including cationic surfactant-cetyl trimethylammonium bromide (CTAB) and anionic surfactant-sodium lauryl sulfate (SDS). The effect of surfactants on adsorption onto SL particles was characterized by scanning electron microscopy (SEM), thermogravimetric analysis (TGA) and conductivity. The cationic surfactant is found to be more effective than anionic surfactant for helping nanotube adsorbed onto microparticle due to the presence of electrostatic interaction between the functionalized MWNT and the surfactant. Furthermore, the MWNT/SL particles dispersed in silicone oil exhibited a typical fibril structure of the electrorheological characteristics under an applied electric field observed by an optical microscope (OM), in which the state of nanotubes wrapped on the particles strongly affects their electro-responsive characteristics.

  7. Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

    Science.gov (United States)

    Yamamoto, Takahiro; Fukuyama, Hidetoshi

    2018-02-01

    We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

  8. Nanoscaled biological gated field effect transistors for cytogenetic analysis

    DEFF Research Database (Denmark)

    Kwasny, Dorota; Dimaki, Maria; Andersen, Karsten Brandt

    2014-01-01

    Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors...

  9. Carbon-nanotube-based liquids: a new class of nanomaterials and their applications

    International Nuclear Information System (INIS)

    Phan, Ngoc Minh; Nguyen, Manh Hong; Phan, Hong Khoi; Bui, Hung Thang

    2014-01-01

    Carbon-nanotube-based liquids—a new class of nanomaterials—have shown many interesting properties and distinctive features offering unprecedented potential for many applications. This paper summarizes the recent progress on the study of the preparation, characterization and properties of carbon-nanotube-based liquids including so-called nanofluids, nanolubricants and different kinds of nanosolutions containing multi-walled carbon nanotubes/single-walled carbon nanotubes/graphene. A broad range of current and future applications of these nanomaterials in the fields of energy saving, power electronic and optoelectronic devices, biotechnology and agriculture are presented. The paper also identifies challenges and opportunities for future research. (paper)

  10. Method for producing carbon nanotubes

    Science.gov (United States)

    Phillips, Jonathan [Santa Fe, NM; Perry, William L [Jemez Springs, NM; Chen, Chun-Ku [Albuquerque, NM

    2006-02-14

    Method for producing carbon nanotubes. Carbon nanotubes were prepared using a low power, atmospheric pressure, microwave-generated plasma torch system. After generating carbon monoxide microwave plasma, a flow of carbon monoxide was directed first through a bed of metal particles/glass beads and then along the outer surface of a ceramic tube located in the plasma. As a flow of argon was introduced into the plasma through the ceramic tube, ropes of entangled carbon nanotubes, attached to the surface of the tube, were produced. Of these, longer ropes formed on the surface portion of the tube located in the center of the plasma. Transmission electron micrographs of individual nanotubes revealed that many were single-walled.

  11. Functionalized carbon nanotubes containing isocyanate groups

    International Nuclear Information System (INIS)

    Zhao Chungui; Ji Lijun; Liu Huiju; Hu Guangjun; Zhang Shimin; Yang Mingshu; Yang Zhenzhong

    2004-01-01

    Functionalized carbon nanotubes containing isocyanate groups can extend the nanotube chemistry, and may promote their many potential applications such as in polymer composites and coatings. This paper describes a facile method to prepare functionalized carbon nanotubes containing highly reactive isocyanate groups on its surface via the reaction between toluene 2,4-diisocyanate and carboxylated carbon nanotubes. Fourier-transformed infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) confirmed that reactive isocyanate groups were covalently attached to carbon nanotubes. The content of isocyanate groups were determined by chemical titration and thermogravimetric analysis (TGA)

  12. Novel fabrication of silica nanotubes using multi-walled carbon ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Silica nanotubes were synthesized using multi-walled carbon nanotubes (MWCNTs) as template. The as-obtained samples were characterized by infrared spectroscopy (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscope (FE–SEM) and photo-.

  13. Field Emission Property of Double-walled Carbon Nanotubes Related to Purification and Transmittance

    International Nuclear Information System (INIS)

    Ahn, KiTae; Jang, HyunChul; Hong, Wanshick; Park, Kyoungwan; Sok, Junghyun; Lyu, SeungChul; Lee, Hansung; Lee, Naesung; Han, Moonsup; Park, Yunsun

    2011-01-01

    Double-walled carbon nanotubes (DWCNTs) with high purity were produced by the catalytic decomposition of tetrahydrofuran (THF) using a Fe-Mo/MgO catalyst at 800°C. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by a two-step purification process consisting of acid treatment and oxidation. In the acid treatment, metallic catalysts were removed in HCl at room temperature for 5 hr with magnetic stirring. Subsequently, the oxidation, using air at 380°C for 5 hr in the a vertical-type furnace, was used to remove the amorphous carbon particles. The DWCNT suspension was prepared by dispersing the purified DWCNTs in the aqueous sodium dodecyl sulfate solution with horn-type sonication. This was then air-sprayed on ITO glass to fabricate DWCNT field emitters. The field emission properties of DWCNT films related to transmittance were studied. This study provides the possibility of the application of large-area transparent CNT field emission cathodes.

  14. Electrostatically Induced Carbon Nanotube Alignment for Polymer Composite Applications

    Science.gov (United States)

    Chapkin, Wesley Aaron

    We have developed a non-invasive technique utilizing polarized Raman spectroscopy to measure changes in carbon nanotube (CNT) alignment in situ and in real time in a polymer matrix. With this technique, we have confirmed the prediction of faster alignment for CNTs in higher electric fields. Real-time polarized Raman spectroscopy also allows us to demonstrate the loss of CNT alignment that occurs after the electric field is removed, which reveals the need for fast polymerization steps or the continued application of the aligning force during polymerization to lock in CNT alignment. Through a study on the effect of polymer viscosity on the rate of CNT alignment, we have determined that shear viscosity serves as the controlling mechanism for CNT rotation. This finding matches literature modeling of rigid rod mobility in a polymer melt and demonstrates that the rotational mobility of CNTs can be explained by a continuum model even though the diameters of single-walled CNTs are 1-2 nm. The viscosity dependence indicates that the manipulation of temperature (and indirectly viscosity) will have a direct effect on the rate of CNT alignment, which could prove useful in expediting the manufacturing of CNT-reinforced composites cured at elevated temperatures. Using real-time polarized Raman spectroscopy, we also demonstrate that electric fields of various strengths lead not only to different speeds of CNT rotation but also to different degrees of alignment. We hypothesize that this difference in achievable alignment results from discrete populations of nanotubes based on their length. The results are then explained by balancing the alignment energy for a given electric field strength with the randomizing thermal energy of the system. By studying the alignment dynamics of different CNT length distributions, we show that different degrees of alignment achieved as a function of the applied electric field strength are directly related to the square of the nanotube length. This

  15. Carbon nanotube and graphene nanoribbon interconnects

    CERN Document Server

    Das, Debaprasad

    2014-01-01

    "The book, Caron Nanotube and Graphene Nanoribbon Interconnects, authored by Drs. Debapraad Das and Hafizur Rahaman serves as a good source of material on CNT and GNR interconnects for readers who wish to get into this area and also for practicing engineers who would like to be updated in advances of this field."-Prof. Ashok Srivastava, Louisiana State University, Baton Rouge, USA"Mathematical analysis included in each and every chapter is the main strength of the materials. ... The book is very precise and useful for those who are working in this area. ... highly focused, very compact, and easy to apply. ... This book depicts a detailed analysis and modelling of carbon nanotube and graphene nanoribbon interconnects. The book also covers the electrical circuit modelling of carbon nanotubes and graphene nanoribbons."-Prof. Chandan Kumar Sarkar, Jadavpur University, Kolkata, India.

  16. Biomolecular detection using a metal semiconductor field effect transistor

    Science.gov (United States)

    Estephan, Elias; Saab, Marie-Belle; Buzatu, Petre; Aulombard, Roger; Cuisinier, Frédéric J. G.; Gergely, Csilla; Cloitre, Thierry

    2010-04-01

    In this work, our attention was drawn towards developing affinity-based electrical biosensors, using a MESFET (Metal Semiconductor Field Effect Transistor). Semiconductor (SC) surfaces must be prepared before the incubations with biomolecules. The peptides route was adapted to exceed and bypass the limits revealed by other types of surface modification due to the unwanted unspecific interactions. As these peptides reveal specific recognition of materials, then controlled functionalization can be achieved. Peptides were produced by phage display technology using a library of M13 bacteriophage. After several rounds of bio-panning, the phages presenting affinities for GaAs SC were isolated; the DNA of these specific phages were sequenced, and the peptide with the highest affinity was synthesized and biotinylated. To explore the possibility of electrical detection, the MESFET fabricated with the GaAs SC were used to detect the streptavidin via the biotinylated peptide in the presence of the bovine Serum Albumin. After each surface modification step, the IDS (current between the drain and the source) of the transistor was measured and a decrease in the intensity was detected. Furthermore, fluorescent microscopy was used in order to prove the specificity of this peptide and the specific localisation of biomolecules. In conclusion, the feasibility of producing an electrical biosensor using a MESFET has been demonstrated. Controlled placement, specific localization and detection of biomolecules on a MESFET transistor were achieved without covering the drain and the source. This method of functionalization and detection can be of great utility for biosensing application opening a new way for developing bioFETs (Biomolecular Field-Effect Transistor).

  17. Fracture of vacancy-defected carbon nanotubes and their embedded nanocomposites

    International Nuclear Information System (INIS)

    Xiao Shaoping; Hou Wenyi

    2006-01-01

    In this paper, we investigate effects of vacancy defects on fracture of carbon nanotubes and carbon nanotube/aluminum composites. Our studies show that even a one-atom vacancy defect can dramatically reduce the failure stresses and strains of carbon nanotubes. Consequently, nanocomposites, in which vacancy-defected nanotubes are embedded, exhibit different characteristics from those in which pristine nanotubes are embedded. It has been found that defected nanotubes with a small volume fraction cannot reinforce but instead weaken nanocomposite materials. Although a large volume fraction of defected nanotubes can slightly increase the failure stresses of nanocomposites, the failure strains of nanocomposites are always decreased

  18. Cellular cytotoxic response induced by highly purified multi-wall carbon nanotube in human lung cells.

    Science.gov (United States)

    Tsukahara, Tamotsu; Haniu, Hisao

    2011-06-01

    Carbon nanotubes, a promising nanomaterial with unique characteristics, have applications in a variety of fields. The cytotoxic effects of carbon nanotubes are partially due to the induction of oxidative stress; however, the detailed mechanisms of nanotube cytotoxicity and their interaction with cells remain unclear. In this study, the authors focus on the acute toxicity of vapor-grown carbon fiber, HTT2800, which is one of the most highly purified multi-wall carbon nanotubes (MWCNT) by high-temperature thermal treatment. The authors exposed human bronchial epithelial cells (BEAS-2B) to HTT2800 and measured the cellular uptake, mitochondrial function, cellular LDH release, apoptotic signaling, reactive oxygen species (ROS) generation and pro-inflammatory cytokine release. The HTT2800-exposed cells showed cellular uptake of the carbon nanotube, increased cell death, enhanced DNA damage, and induced cytokine release. However, the exposed cells showed no obvious intracellular ROS generation. These cellular and molecular findings suggest that HTT2800 could cause a potentially adverse inflammatory response in BEAS-2B cells.

  19. Relating hysteresis and electrochemistry in graphene field effect transistors

    NARCIS (Netherlands)

    Veligura, Alina; Zomer, Paul J.; Vera-Marun, Ivan J.; Jozsa, Csaba; Gordiichuk, Pavlo I.; van Wees, Bart J.

    2011-01-01

    Hysteresis and commonly observed p-doping of graphene based field effect transistors (FETs) have been discussed in reports over the last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer

  20. Progress in Research on Carbon Nanotubes Reinforced Cementitious Composites

    Directory of Open Access Journals (Sweden)

    Qinghua Li

    2015-01-01

    Full Text Available As one-dimensional (1D nanofiber, carbon nanotubes (CNTs have been widely used to improve the performance of nanocomposites due to their high strength, small dimensions, and remarkable physical properties. Progress in the field of CNTs presents a potential opportunity to enhance cementitious composites at the nanoscale. In this review, current research activities and key advances on multiwalled carbon nanotubes (MWCNTs reinforced cementitious composites are summarized, including the effect of MWCNTs on modulus of elasticity, porosity, fracture, and mechanical and microstructure properties of cement-based composites. The issues about the improvement mechanisms, MWCNTs dispersion methods, and the major factors affecting the mechanical properties of composites are discussed. In addition, large-scale production methods of MWCNTs and the effects of CNTs on environment and health are also summarized.

  1. Mobility overestimation due to gated contacts in organic field-effect transistors

    Science.gov (United States)

    Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

  2. Experimental realization of a silicon spin field-effect transistor

    OpenAIRE

    Huang, Biqin; Monsma, Douwe J.; Appelbaum, Ian

    2007-01-01

    A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after...

  3. Multiscale Modeling of Carbon Nanotube-Epoxy Nanocomposites

    Science.gov (United States)

    Fasanella, Nicholas A.

    Epoxy-composites are widely used in the aerospace industry. In order to improve upon stiffness and thermal conductivity; carbon nanotube additives to epoxies are being explored. This dissertation presents multiscale modeling techniques to study the engineering properties of single walled carbon nanotube (SWNT)-epoxy nanocomposites, consisting of pristine and covalently functionalized systems. Using Molecular Dynamics (MD), thermomechanical properties were calculated for a representative polymer unit cell. Finite Element (FE) and orientation distribution function (ODF) based methods were used in a multiscale framework to obtain macroscale properties. An epoxy network was built using the dendrimer growth approach. The epoxy model was verified by matching the experimental glass transition temperature, density, and dilatation. MD, via the constant valence force field (CVFF), was used to explore the mechanical and dilatometric effects of adding pristine and functionalized SWNTs to epoxy. Full stiffness matrices and linear coefficient of thermal expansion vectors were obtained. The Green-Kubo method was used to investigate the thermal conductivity as a function of temperature for the various nanocomposites. Inefficient phonon transport at the ends of nanotubes is an important factor in the thermal conductivity of the nanocomposites, and for this reason discontinuous nanotubes were modeled in addition to long nanotubes. To obtain continuum-scale elastic properties from the MD data, multiscale modeling was considered to give better control over the volume fraction of nanotubes, and investigate the effects of nanotube alignment. Two methods were considered; an FE based method, and an ODF based method. The FE method probabilistically assigned elastic properties of elements from the MD lattice results based on the desired volume fraction and alignment of the nanotubes. For the ODF method, a distribution function was generated based on the desired amount of nanotube alignment

  4. Structural transformations of carbon chains inside nanotubes

    International Nuclear Information System (INIS)

    Warner, Jamie H.; Ruemmeli, Mark H.; Bachmatiuk, Alicja; Buechner, Bernd

    2010-01-01

    In situ aberration-corrected high-resolution transmission electron microscopy is used to examine the structural transformations of carbon chains that occur in the interior region of carbon nanotubes. We find electron-beam irradiation leads to the formation of two-dimensional carbon structures that are freely mobile inside the nanotube. The inner diameter of the nanotube influences the structural transformations of the carbon chains. As the diameter of the nanotube increases, electron-beam irradiation leads to curling of the chains and eventually the formation of closed looped structures. The closed looped structures evolve into spherical fullerenelike structures that exhibit translational motion inside the nanotubes and also coalesce to form larger nanotube structures. These results demonstrate the use of carbon nanotubes as test tubes for growing small carbon nanotubes within the interior by using only electron-beam irradiation at 80 kV.

  5. Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

    International Nuclear Information System (INIS)

    Bartolomeo, Antonio Di; Romeo, Francesco; Sabatino, Paolo; Carapella, Giovanni; Iemmo, Laura; Giubileo, Filippo; Schroeder, Thomas; Lupina, Grzegorz

    2015-01-01

    We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10 −4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface. (paper)

  6. Local gate control in carbon nanotube quantum devices

    Science.gov (United States)

    Biercuk, Michael Jordan

    This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

  7. Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

    Energy Technology Data Exchange (ETDEWEB)

    Ummethala, Raghunandan; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Wenger, Daniela; Tedde, Sandro F. [Siemens Healthcare GmbH, Technology Centre, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Eckert, Jürgen [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, A-8700 Leoben (Austria); Department Materials Physics, Montanuniversität Leoben, Jahnstraße 12, A-8700 Leoben (Austria)

    2016-01-28

    Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

  8. Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

    Science.gov (United States)

    Ummethala, Raghunandan; Wenger, Daniela; Tedde, Sandro F.; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd; Eckert, Jürgen

    2016-01-01

    Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

  9. Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Shimoi, Norihiro, E-mail: shimoi@mail.kankyo.tohoku.ac.jp [Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2015-12-07

    Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, the blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.

  10. Low temperature hall effect investigation of conducting polymer-carbon nanotubes composite network.

    Science.gov (United States)

    Bahrami, Afarin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat; Behzad, Kasra; M Abdi, Mahnaz; Din, Fasih Ud

    2012-11-14

    Polypyrrole (PPy) and polypyrrole-carboxylic functionalized multi wall carbon nanotube composites (PPy/f-MWCNT) were synthesized by in situ chemical oxidative polymerization of pyrrole on the carbon nanotubes (CNTs). The structure of the resulting complex nanotubes was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The effects of f-MWCNT concentration on the electrical properties of the resulting composites were studied at temperatures between 100 K and 300 K. The Hall mobility and Hall coefficient of PPy and PPy/f-MWCNT composite samples with different concentrations of f-MWCNT were measured using the van der Pauw technique. The mobility decreased slightly with increasing temperature, while the conductivity was dominated by the gradually increasing carrier density.

  11. Fluorescently labeled bionanotransporters of nucleic acid based on carbon nanotubes

    International Nuclear Information System (INIS)

    Novopashina, D.S.; Apartsin, E.K.; Venyaminova, A.G.

    2012-01-01

    We propose an approach to the design of a new type of hybrids of oligonucleotides with fluorescein-functionalized single-walled carbon nanotubes. The approach is based on stacking interactions of functionalized nanotubes with pyrene residues in conjugates of oligonucleotides. The amino- and fluorescein-modified single walled carbon nanotubes are obtained, and their physico-chemical properties are investigated. The effect of the functionalization type of carbon nanotubes on the efficacy of the sorption of pyrene conjugates of oligonucleotides was examined. The proposed noncovalent hybrids of fluorescein-labeled carbon nanotubes with oligonucleotides may be used for the intracellular transport of functional nucleic acids.

  12. Mechanical characterization of epoxy composite with multiscale reinforcements: Carbon nanotubes and short carbon fibers

    International Nuclear Information System (INIS)

    Rahmanian, S.; Suraya, A.R.; Shazed, M.A.; Zahari, R.; Zainudin, E.S.

    2014-01-01

    Highlights: • Multiscale composite was prepared by incorporation of carbon nanotubes and fibers. • Carbon nanotubes were also grown on short carbon fibers to enhance stress transfer. • Significant improvements were achieved in mechanical properties of composites. • Synergic effect of carbon nanotubes and fibers was demonstrated. - Abstract: Carbon nanotubes (CNT) and short carbon fibers were incorporated into an epoxy matrix to fabricate a high performance multiscale composite. To improve the stress transfer between epoxy and carbon fibers, CNT were also grown on fibers through chemical vapor deposition (CVD) method to produce CNT grown short carbon fibers (CSCF). Mechanical characterization of composites was performed to investigate the synergy effects of CNT and CSCF in the epoxy matrix. The multiscale composites revealed significant improvement in elastic and storage modulus, strength as well as impact resistance in comparison to CNT–epoxy or CSCF–epoxy composites. An optimum content of CNT was found which provided the maximum stiffness and strength. The synergic reinforcing effects of combined fillers were analyzed on the fracture surface of composites through optical and scanning electron microscopy (SEM)

  13. Gas sensing with self-assembled monolayer field-effect transistors

    NARCIS (Netherlands)

    Andringa, Anne-Marije; Spijkman, Mark-Jan; Smits, Edsger C. P.; Mathijssen, Simon G. J.; van Hal, Paul A.; Setayesh, Sepas; Willard, Nico P.; Borshchev, Oleg V.; Ponomarenko, Sergei A.; Blom, Paul W. M.; de Leeuw, Dago M.

    A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for

  14. Carbon nanotube substrates and catalyzed hot stamp for polishing and patterning the substrates

    Science.gov (United States)

    Wang, Yuhuang [Evanston, IL; Hauge, Robert H [Houston, TX; Schmidt, Howard K [Houston, TX; Kim, Myung Jong [Houston, TX; Kittrell, W Carter [Houston, TX

    2009-09-08

    The present invention is generally directed to catalyzed hot stamp methods for polishing and/or patterning carbon nanotube-containing substrates. In some embodiments, the substrate, as a carbon nanotube fiber end, is brought into contact with a hot stamp (typically at 200-800.degree. C.), and is kept in contact with the hot stamp until the morphology/patterns on the hot stamp have been transferred to the substrate. In some embodiments, the hot stamp is made of material comprising one or more transition metals (Fe, Ni, Co, Pt, Ag, Au, etc.), which can catalyze the etching reaction of carbon with H.sub.2, CO.sub.2, H.sub.2O, and/or O.sub.2. Such methods can (1) polish the carbon nanotube-containing substrate with a microscopically smooth finish, and/or (2) transfer pre-defined patterns from the hot stamp to the substrate. Such polished or patterned carbon nanotube substrates can find application as carbon nanotube electrodes, field emitters, and field emitter arrays for displays and electron sources.

  15. Single event burnout sensitivity of embedded field effect transistors

    International Nuclear Information System (INIS)

    Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

    1999-01-01

    Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described

  16. Single event burnout sensitivity of embedded field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

    1999-12-01

    Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

  17. Electrophoretic deposition of carbon nanotubes on a carbon fiber surface with different index graphitization

    International Nuclear Information System (INIS)

    Almeida, E.C.; Baldan, M.R.; Ferreira, N.G.; Edwards, E.R.

    2009-01-01

    Full text: The purpose of this work is to examine the electrophoretic deposition of carbon nanotubes powder on carbon fibers, produced at different heat treatments temperatures. Besides, a systematic study of the effects of graphitization index from substrate on the structure and morphology of CNTs has been available. Carbon fibers were produced from polyacrylonitrile at three different heat treatments temperatures, 1000, 1500 and 2000 deg C. The carbon fibers microstructure or its graphitization index may be controlled by the heat treatments temperatures. The electrophoretic deposition of carbon nanotubes was obtained with the powder of carbon nanotubes dispersed in water by ultrasonication to obtain dispersions of 0.05 mg/mL. The carbon fibers were immersed in the nanotube dispersion, and a positive potential of 10 V/cm was applied. Morphology and microstructure of carbon nanotubes on carbon fibers were obtained by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. (author)

  18. Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

    Science.gov (United States)

    Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

    2011-03-01

    We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

  19. NMR study of local diamagnetic properties of carbon structures with multiwalled nanotubes

    International Nuclear Information System (INIS)

    Nikolaev, E.G.; Omel'yanovsky, O.E.; Prudkovsky, V.S.; Sadakov, A.V.; Tsebro, V.I.

    2009-01-01

    The reasons for the high diamagnetic susceptibility of carbon columns, which are covered with a nanotube mesh, from the interior part of cathode deposits have been studied by means of NMR. A comparative study is made of the 13 C NMR spectra and the magnetic susceptibility of carbon columns before and after ultrasonic processing as well as of finely dispersed material, obtained as a result of such processing, enriched with multilayer nanotubes. The strong diamagnetism of the carbon columns is apparently associated with a quite dense conglomerate of graphite particles, nanotubes, and multilayer polyhedral particles present in their core and not with the surface mesh of multilayer nanotubes. To make a more accurate determination of the character of the anisotropy of the magnetic susceptibility of multilayer carbon nanotubes, the form of the 13 C NMR spectra of samples enriched with multilayer nanotubes, where the nanotubes are either not oriented or only partially oriented, is analyzed. It is shown that the diamagnetic susceptibility of multilayer carbon nanotubes is highest when the magnetic field is oriented perpendicular to their axis

  20. The effect of carbon nanotube dimensions and dispersion on the fatigue behavior of epoxy nanocomposites

    International Nuclear Information System (INIS)

    Zhang, W; Picu, R C; Koratkar, N

    2008-01-01

    Fatigue is one of the primary reasons for failure in structural materials. It has been demonstrated that carbon nanotubes can suppress fatigue in polymer composites via crack-bridging and a frictional pull-out mechanism. However, a detailed study of the effects of nanotube dimensions and dispersion on the fatigue behavior of nanocomposites has not been performed. In this work, we show the strong effect of carbon nanotube dimensions (i.e. length, diameter) and dispersion quality on fatigue crack growth suppression in epoxy nanocomposites. We observe that the fatigue crack growth rates can be significantly reduced by (1) reducing the nanotube diameter, (2) increasing the nanotube length and (3) improving the nanotube dispersion. We qualitatively explain these observations by using a fracture mechanics model based on crack-bridging and pull-out of the nanotubes. By optimizing the above parameters (tube length, diameter and dispersion) we demonstrate an over 20-fold reduction in the fatigue crack propagation rate for the nanocomposite epoxy compared to the baseline (unfilled) epoxy

  1. Quantum interference effects on the intensity of the G modes in double-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Tran, Huy Nam; Blancon, Jean-Christophe Robert; Arenal, Raul

    2017-01-01

    The effects of quantum interferences on the excitation dependence of the intensity of G modes have been investigated on single-walled carbon nanotubes [Duque et al., Phys. Rev. Lett.108, 117404 (2012)]. In this work, by combining optical absorption spectroscopy and Raman scattering on individual index identified double-walled carbon nanotubes, we examine the experimental excitation dependence of the intensity of longitudinal optical and transverse optical G modes of the constituent inner and outer single-walled carbon nanotubes. The observed striking dependencies are understood in terms of quantum interference effects. Considering such effects, the excitation dependence of the different components of the G modes permit to unambiguously assign each of them as originating from the longitudinal or transverse G modes of inner and outer tubes.

  2. Carbon nanotube as NEMS sensor - effect of chirality and stone-wales defect intend

    International Nuclear Information System (INIS)

    Gayathri, V; Geetha, R

    2006-01-01

    Having nanosize and unique electrical properties, carbon nanotubes (CNTs) attract lot of interest among scientific community all over the world. One of the recent observations is its role as nanosensors. Obviously the nanosize and high strength of CNT are most preferred parameter for technical and electromechanical field in the industrial point of view. The defects in CNT structure have a vital role in determining their electrical and mechanical properties. Our earlier study indicates an effective role played by the topological defects like pentagon and octagon on the electromechanical properties of these nanostructures. Here our aim is to look in to the effect of Stone-wales defect and chirality on this property of nanotubes deformed under applied pressure. Among the three kinds of tubes considered for this study, we observed that armchair (5, 5) tube is more suitable for sensor applications

  3. Magnetoreresistance of carbon nanotube-polypyrrole composite yarns

    Science.gov (United States)

    Ghanbari, R.; Ghorbani, S. R.; Arabi, H.; Foroughi, J.

    2018-05-01

    Three types of samples, carbon nanotube yarn and carbon nanotube-polypyrrole composite yarns had been investigated by measurement of the electrical conductivity as a function of temperature and magnetic field. The conductivity was well explained by 3D Mott variable range hopping (VRH) law at T < 100 K. Both positive and negative magnetoresistance (MR) were observed by increasing magnetic field. The MR data were analyzed based a theoretical model. A quadratic positive and negative MR was observed for three samples. It was found that the localization length decreases with applied magnetic field while the density of states increases. The increasing of the density of states induces increasing the number of available energy states for hopping. Thus the electron hopping probability increases in between sites with the shorter distance that results to small the average hopping length.

  4. Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon

    Science.gov (United States)

    Tour, James M.; Dyke, Christopher A.; Maya, Francisco; Stewart, Michael P.; Chen, Bo; Flatt, Austen K.

    2012-01-01

    The purpose of the invention is to covalently attach functionalized carbon nanotubes to silicon. This step allows for the introduction of carbon nanotubes onto all manner of silicon surfaces, and thereby introduction of carbon nano - tubes covalently into silicon-based devices, onto silicon particles, and onto silicon surfaces. Single-walled carbon nanotubes (SWNTs) dispersed as individuals in surfactant were functionalized. The nano - tube was first treated with 4-t-butylbenzenediazonium tetrafluoroborate to give increased solubility to the carbon nanotube; the second group attached to the sidewall of the nanotube has a silyl-protected terminal alkyne that is de-protected in situ. This gives a soluble carbon nanotube that has functional groups appended to the sidewall that can be attached covalently to silicon. This reaction was monitored by UV/vis/NJR to assure direct covalent functionalization.

  5. Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: Circuitry and mechanical design

    Energy Technology Data Exchange (ETDEWEB)

    Kia, Kaveh Kazemi [Department of Electrical and Computer Engineering, Islamic Azad University of Bonab, Bonab (Iran, Islamic Republic of); Bonabi, Fahimeh [Department of Engineering, Islamic Azad University of Bonab, Bonab (Iran, Islamic Republic of)

    2012-12-15

    A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 {mu}s. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through the graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.

  6. Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: circuitry and mechanical design.

    Science.gov (United States)

    Kia, Kaveh Kazemi; Bonabi, Fahimeh

    2012-12-01

    A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 μs. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through the graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.

  7. Developing the laminar MHD forced convection flow of water/FMWNT carbon nanotubes in a microchannel imposed the uniform heat flux

    Energy Technology Data Exchange (ETDEWEB)

    Karimipour, Arash; Taghipour, Abdolmajid [Department of Mechanical Engineering, Najafabad Branch, Islamic Azad University, Najafabad (Iran, Islamic Republic of); Malvandi, Amir, E-mail: amirmalvandi@aut.ac.ir [Department of Mechanical Engineering, Neyshabur Branch, Islamic Azad University, Neyshabur (Iran, Islamic Republic of)

    2016-12-01

    This paper aims to investigate magnetic field and slip effects on developing laminar forced convection of nanofluids in the microchannels. A novel mixture of water and FMWNT carbon nanotubes is used as the working fluid. To do this, fluid flow and heat transfer through a microchannel is simulated by a computer code in FORTRAN language. The mixture of FMWNT carbon nanotubes suspended in water is considered as the nanofluid. Slip velocity is supposed as the hydrodynamic boundary condition while the microchannel's lower wall is insulated and the top wall is under the effect of a constant heat flux. Moreover, the flow field is subjected to a magnetic field with a constant strength. The results are presented as the velocity, temperature and Nusselt number profiles. It is observed that nanofluid composed of water and carbon nanotubes (FMWNT) can work well to increase the heat transfer rate along the microchannel walls. Furthermore, it is indicated that imposing the magnetic field is very effective at the thermally developing region. In contrast, the magnetic field effect at fully developed region is insignificant, especially at low values of Reynolds number. - Highlights: • Simulation of water/FMWNT carbon nanotubes flow in a microchannel. • The effects of magnetic field strength on nanofluid's slip velocity. • The effects of Ha, Re, ϕ and slip coefficient on averaged Nusselt number. • Magnetic field effect at developing flow region is significant.

  8. 1/f noise in carbon nanotubes

    International Nuclear Information System (INIS)

    Collins, Philip G.; Fuhrer, M. S.; Zettl, A.

    2000-01-01

    The electrical noise characteristics of single-walled carbon nanotubes have been investigated. For all three cases of individual isolated nanotubes, thin films of interconnected nanotubes, and bulk nanotube mats, anomalously large bias-dependent 1/f noise is found. The noise magnitude greatly exceeds that commonly observed in metal films, carbon resistors, or even carbon fibers with comparable resistances. A single empirical expression describes the noise for all nanotube samples, suggesting a common noise-generating mechanism proportional only to the number of nanotubes in the conductor. We consider likely sources of the fluctuations, and consequences for electronic applications of nanotubes if the excessive noise cannot be suppressed. (c) 2000 American Institute of Physics

  9. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

    Science.gov (United States)

    Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

    2017-05-23

    Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

  10. ELECTROPHORETIC DEPOSITION OF TIO2-MULTI-WALLED CARBON NANOTUBE COMPOSITE COATINGS: MORPHOLOGICAL STUDY

    Directory of Open Access Journals (Sweden)

    M. S. MAHMOUDI JOZEE

    2016-09-01

    Full Text Available A homogenous TiO2 / multi-walled carbon nanotubes(MWCNTs composite film were prepared by electrophoretic co-deposition from organic suspension on a stainless steel substrate.  In this study, MWCNTs was incorporated to the coating because of their long structure and their capability to be functionalized by different inorganic groups on the surface. FTIR spectroscopy showed the existence of carboxylic groups on the modified carbon nanotubes surface. The effect of applied electrical fields, deposition time and concentration of nanoparticulates on coatings morphology were investigated by scanning electron microscopy. It was found that combination of MWCNTs within TiO2 matrix eliminating micro cracks presented on TiO2 coating. Also, by increasing the deposition voltages, micro cracks were increased. SEM observation of the coatings revealed that TiO2/multi-walled carbon nanotubes coatings produced from optimized electric field was uniform and had good adhesive to the substrate.

  11. Thionyl chloride assisted functionalization of amorphous carbon nanotubes: A better field emitter and stable nanofluid with better thermal conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, S.K.; Jha, A. [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700 032 (India); School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032 (India)

    2015-06-15

    Highlights: • Thionyl chloride assisted functionalization of amorphous carbon nanotubes (a-CNTs). • Improved dispersion enhanced thermal conductivity of engine oil. • Again f-a-CNTs showed enhanced field emission property compared to pure a-CNTs. - Abstract: Amorphous carbon nanotubes (a-CNTs) were synthesized at low temperature in open atmosphere and further functionalized by treating them in thionyl chloride added stearic acid-dichloro methane solution. The as prepared functionalized a-CNTs (f-a-CNTs) were characterized by Raman spectroscopy, Fourier transformed infrared spectroscopy, X-ray photoelectron spectroscopy, transmission and scanning electron microscopy. The nanofluid was prepared by dispersing f-a-CNTs in engine oil using ultrasonic treatment. The effective thermal conductivity of as prepared nanofluid was investigated at different loading (volume fraction of f-a-CNTs). Obtained experimental data of thermal conductivity were compared with the predicted values, calculated using existing theoretical models. Stability of the nanofluid was tested by means of zeta potential measurement to optimize the loading. The as prepared f-a-CNTs sample also showed improved field emission result as compared to pristine a-CNTs. Dependence of field emission behavior on inter electrode distance was investigated too.

  12. Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

    Science.gov (United States)

    Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

    2007-03-01

    A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

  13. Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Jian-Hua, E-mail: jhdeng1983@163.com [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Lin; Wang, Fan-Jie; Yu, Bin; Li, Guo-Zheng; Li, De-Jun [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Guo-An [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China)

    2015-01-01

    Graphical abstract: Thinned, open-ended, and defected carbon nanotubes were prepared by using hydrogen plasma processing. The processed carbon nanotubes have far better field emission performance than that of the pristine ones. - Highlights: • CVD prepared CNT arrays were processed by microwave hydrogen plasma. • Thinned, open-ended, and defected CNTs were obtained. • Processed CNTs have far better field emission performance than the pristine ones. • Processed CNTs have applicable emission stability after being perfectly aged. - Abstract: Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP{sup 3}-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/μm and threshold field of 0.896 V/μm, much better than 0.948 and 1.559 V/μm of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm{sup 2} after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources.

  14. Carbon nanotube filters

    Science.gov (United States)

    Srivastava, A.; Srivastava, O. N.; Talapatra, S.; Vajtai, R.; Ajayan, P. M.

    2004-09-01

    Over the past decade of nanotube research, a variety of organized nanotube architectures have been fabricated using chemical vapour deposition. The idea of using nanotube structures in separation technology has been proposed, but building macroscopic structures that have controlled geometric shapes, density and dimensions for specific applications still remains a challenge. Here we report the fabrication of freestanding monolithic uniform macroscopic hollow cylinders having radially aligned carbon nanotube walls, with diameters and lengths up to several centimetres. These cylindrical membranes are used as filters to demonstrate their utility in two important settings: the elimination of multiple components of heavy hydrocarbons from petroleum-a crucial step in post-distillation of crude oil-with a single-step filtering process, and the filtration of bacterial contaminants such as Escherichia coli or the nanometre-sized poliovirus (~25 nm) from water. These macro filters can be cleaned for repeated filtration through ultrasonication and autoclaving. The exceptional thermal and mechanical stability of nanotubes, and the high surface area, ease and cost-effective fabrication of the nanotube membranes may allow them to compete with ceramic- and polymer-based separation membranes used commercially.

  15. Diameter sensitive effect in singlewalled carbon nanotubes upon acid treatment

    International Nuclear Information System (INIS)

    Costa, S.; Borowiak-Palen, E.

    2009-01-01

    Singlewalled carbon nanotubes (SWCNT) exhibit very unique properties. As an electronic system they undergo amphoteric doping effects (n-type and p-type) which can be reversed. These processes affect the optical and vibronic properties of the carbon nanotubes. The most common and widely used procedure which changes the properties of the SWCNT is acid treatment applied as a purification procedure. This effect has been widely studied but not fully understood so far. Here, we present a study, in which a diameter sensitive effect has been observed. Therefore, two kinds of SWCNT samples have been studied: (i) produced via chemical vapour deposition with a broad diameter distribution, and (ii) synthesised by the laser ablation technique which is commonly known to result in narrow diameter distribution bulk SWCNT samples. Resonance Raman spectroscopy, optical absorption spectroscopy, and Fourier transform middle-infrared spectroscopy have been applied for the characterisation of the samples.

  16. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  17. Spontaneous and controlled-diameter synthesis of single-walled and few-walled carbon nanotubes

    Science.gov (United States)

    Inoue, Shuhei; Lojindarat, Supanat; Kawamoto, Takahiro; Matsumura, Yukihiko; Charinpanitkul, Tawatchai

    2018-05-01

    In this study, we explored the spontaneous and controlled-diameter growth of carbon nanotubes. We evaluated the effects of catalyst density, reduction time, and a number of catalyst coating on the substrate (for multi-walled carbon nanotubes) on the diameter of single-walled carbon nanotubes and the number of layers in few-walled carbon nanotubes. Increasing the catalyst density and reduction time increased the diameters of the carbon nanotubes, with the average diameter increasing from 1.05 nm to 1.86 nm for single-walled carbon nanotubes. Finally, we succeeded in synthesizing a significant double-walled carbon nanotube population of 24%.

  18. Functionalization and large scale assembly of carbon nanotubes

    OpenAIRE

    Majumder, Anindya

    2016-01-01

    Assembly of nanoparticles provides effective building blocks for physical, chemical and biological systems which have surprisingly collective intrinsic physical properties. One-dimensional nanomaterials are one of the most spectacular and promising candidates for technological application in the field of nanotechnology. Single-walled carbon nanotubes represent an anisotropic and perfectly one-dimensional group of nanomaterials with extraordinary electronic, mechanical, chemical and thermal pr...

  19. Tuning the Slide-Roll Motion Mode of Carbon Nanotubes via Hydroxyl Groups

    Science.gov (United States)

    Li, Rui; Wang, Shiwei; Peng, Qing

    2018-05-01

    Controlling the motion of carbon nanotubes is critical in manipulating nanodevices, including nanorobots. Herein, we investigate the motion behavior of SWCNT (10,10) on Si substrate utilizing molecular dynamics simulations. We show that hydroxyl groups have sensitive effect on the carbon nanotube's motion mode. When the hydroxyl groups' ratio on carbon nanotube and silicon substrate surfaces is larger than 10 and 20%, respectively, the motion of carbon nanotube transforms from sliding to rolling. When the hydroxyl groups' ratio is smaller, the slide or roll mode can be controlled by the speed of carbon nanotube, which is ultimately determined by the competition between the interface potential energy and kinetic energy. The change of motion mode holds true for different carbon nanotubes with hydroxyl groups. The chirality has little effect on the motion behavior, as opposed to the diameter, attributed to the hydroxyl groups' ratio. Our study suggests a new route to control the motion behavior of carbon