Radiation damages and electro-conductive characteristics of Neutron-Transmutation-Doped GaAs

Energy Technology Data Exchange (ETDEWEB)

Kuriyama, Kazuo; Sato, Masataka; Sakai, Kiyohiro [Hosei Univ., Koganei, Tokyo (Japan). Coll. of Engineering; Okada, Moritami

1996-04-01

Neutron Transmutation Doping (NTD) method made it possible to do homogeneous doping of impurities and to easily control the doping level. Thus, the method has been put into practice for some materials such as silicon. Here, the annealing behavior of anti-site defects generated in neutron-irradiated GaAs was studied. Electric activations of NTD-impurities were started around 550degC in P1 and P2 radiation fields, which were coincident with the beginning of extinction of electron trapping which was caused by anti-site defects due to fast neutron radiation. The electric resistivities of GaAs in neutron radiation fields; P1, P2 and P3 changed depending with the annealing temperature. The electric resistivities of GaAs in P1 and P2 fields indicate the presence of hopping conduction through radiation damages. The resistance of GaAs irradiated in P1 was smaller by nearly 2 orders than that of the untreated control. Further, the electric activation process for NTD-impurities was investigated using ESR and Raman spectroscopy. (M.N.)

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

2011-05-15

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

2011-01-01

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

Science.gov (United States)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

Science.gov (United States)

Wittenberg, Vladimir; Rosenblit, Michael; Sarusi, Gabby

2017-08-01

This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR - 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

Determination of the nitrogen concentration in epitaxial layers of GaAs /SUB 1-x/ p /SUB x/ by the optical method

International Nuclear Information System (INIS)

Lupal, M.V.; Klot, B; Nikhter, K.; Pikhtin, A.N.; Trapp, M.

1986-01-01

This paper determines the dependence of the cross section for absorption in the A /SUB N/ line of a bound exciton on the nitrogen content in the solid solution GaAs /SUB 1-x/ P /SUB x/ by comparing the results of optical measurements with the data from secondary ionic mass spectrometry, and these results are used to study the effect of technological factors on the nitrogen concentration epitaxial layers obtained by the gas-transport method. Doping was carried out with nitrogen by injecting ammonia into the reactor zone; the partial pressure of the ammonia was varied from 1 to 25 kPa. Aside from nitrogen, the authors doped the layers with shallow donor Te. It is established that the solubility of nitrogen in the solid solution decreases as the arsenic content increases when the convenient optical method for determining the nitrogen concentration in epitaxial GaAs /SUB 1-x/ P /SUB x/ layers is used

Self-Assembled Monolayers of CdSe Nanocrystals on Doped GaAs Substrates

DEFF Research Database (Denmark)

Marx, E.; Ginger, D.S.; Walzer, Karsten

2002-01-01

This letter reports the self-assembly and analysis of CdSe nanocrystal monolayers on both p- and a-doped GaAs substrates. The self-assembly was performed using a 1,6-hexanedithiol self-assembled monolayer (SAM) to link CdSe nanocrystals to GaAs substrates. Attenuated total reflection Fourier tran...

Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p-type GaAs

Science.gov (United States)

Kim, B. W.; Majerfeld, A.

1996-02-01

We solve a pair of Boltzmann transport equations based on an interacting two-isotropic-band model in a general way first to get transport parameters corresponding to the relaxation time. We present a simple method to calculate effective relaxation times, separately for each band, which compensate for the inherent deficiencies in using the relaxation time concept for polar optical-phonon scattering. Formulas for calculating momentum relaxation times in the two-band model are presented for all the major scattering mechanisms of p-type GaAs for simple, practical mobility calculations. In the newly proposed theoretical framework, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain direct comparisons between the theory and recently available experimental results. In the calculations, the light-hole-band nonparabolicity is taken into account on the average by the use of energy-dependent effective mass obtained from the kṡp method and valence-band anisotropy is taken partly into account by the use the Wiley's overlap function.. The calculated Hall mobilities show a good agreement with our experimental data for carbon-doped p-GaAs samples in the range of degenerate hole densities. The calculated Hall factors show rH=1.25-1.75 over hole densities of 2×1017-1×1020 cm-3.

Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

2010-01-01

Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

Raman spectroscopy of boron-doped single-layer graphene.

Science.gov (United States)

Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

2012-07-24

The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers

CERN Document Server

Nohavica, D; Zdansky, K

1999-01-01

We report on liquid-phase epitaxial growth of thick layers of GaInP(As), lattice matched to GaAs. Layers with thicknesses up to 10 mu m were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a significant decrease in the residual impurity level when erbium is added to the melt. Fundamental electrical and optical properties of the layers were investigated. (author)

Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

International Nuclear Information System (INIS)

Yalishev, V.Sh.

2006-02-01

Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Science.gov (United States)

2010-01-01

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

The Mn site in Mn-doped GaAs nanowires: an EXAFS study

International Nuclear Information System (INIS)

D’Acapito, F; Rovezzi, M; Boscherini, F; Jabeen, F; Bais, G; Piccin, M; Rubini, S; Martelli, F

2012-01-01

We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound. (paper)

Electrocatalytic activity of atomic layer deposited Pt-Ru catalysts onto N-doped carbon nanotubes

NARCIS (Netherlands)

Johansson, A.-C.; Larsen, J.V.; Verheijen, M.A.; Haugshøj, K.B.; Clausen, H.; Kessels, W.M.M.; Christensen, L.H.; Thomsen, E.V.

2014-01-01

Pt-Ru catalysts of various compositions, between 0 and 100 at.% of Ru, were deposited onto N-doped multi-walled carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) at 250 C. The Pt and Ru precursors were trimethyl(methylcyclopentadienyl)platinum (MeCpPtMe3) and

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Science.gov (United States)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Exciton states in GaAs δ-doped systems under magnetic fields and hydrostatic pressure

Energy Technology Data Exchange (ETDEWEB)

Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Instituto de Física, Universidad de Antioquia, AA 1226 Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226 Medellín (Colombia)

2013-04-15

Excitons in GaAs n-type δ-doped quantum wells are studied taking into account the effects of externally applied magnetic fields as well as of hydrostatic pressure. The one-dimensional potential profile in both the conduction and valence bands is described including Hartree effects via a Thomas–Fermi-based local density approximation. The allowed uncorrelated energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions and a variational method is used to obtain the exciton states. The results are presented as functions of the two-dimensional doping concentration and the magnetic field strength for zero and finite values of the hydrostatic pressure. In general, it is found that the exciton binding energy is a decreasing function of the doping-density and an increasing function of the magnetic field intensity. A comparison with recent experiments on exciton-related photoluminescence in n-type δ-doped GaAs is made.

Selenium implantation in epitaxial gallium arsenide layers

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

1981-01-01

Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

MOF-Derived ZnO Nanoparticles Covered by N-Doped Carbon Layers and Hybridized on Carbon Nanotubes for Lithium-Ion Battery Anodes.

Science.gov (United States)

Zhang, Hui; Wang, Yunsong; Zhao, Wenqi; Zou, Mingchu; Chen, Yijun; Yang, Liusi; Xu, Lu; Wu, Huaisheng; Cao, Anyuan

2017-11-01

Metal-organic frameworks (MOFs) have many promising applications in energy and environmental areas such as gas separation, catalysis, supercapacitors, and batteries; the key toward those applications is controlled pyrolysis which can tailor the porous structure, improve electrical conductivity, and expose metal ions in MOFs. Here, we present a systematic study on the structural evolution of zeolitic imidazolate frameworks hybridized on carbon nanotubes (CNTs) during the carbonization process. We show that a number of typical products can be obtained, depending on the annealing time, including (1) CNTs wrapped by relatively thick carbon layers, (2) CNTs grafted by ZnO nanoparticles which are covered by thin nitrogen-doped carbon layers, and (3) CNTs grafted by aggregated ZnO nanoparticles. We also investigated the electrochemical properties of those hybrid structures as freestanding membrane electrodes for lithium ion batteries, and the second one (CNT-supported ZnO covered by N-doped carbon) shows the best performance with a high specific capacity (850 mA h/g at a current density of 100 mA/g) and excellent cycling stability. Our results indicate that tailoring and optimizing the MOF-CNT hybrid structure is essential for developing high-performance energy storage systems.

Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons

International Nuclear Information System (INIS)

Fromme, B.; Baum, G.; Goeckel, D.; Raith, W.

1989-01-01

Circularly polarized light is emitted in radiative transitions of polarized electrons from the conduction to the valence band in GaAs or GaAs 1-x P x crystals. The degree of light polarization is directly related to the polarization of the conduction-band electrons at the instant of recombination and allows conclusions about the depolarization of electrons in the conduction band. The depolarization is caused by spin-relaxation processes. The efficiency of these processes depends on crystal type, crystal temperature, degree of doping, and kinetic energy of the electrons. Highly p-doped GaAs and GaAs 0.62 P 0.38 crystals (N A >1x10 19 atoms/cm 3 ) were bombarded with polarized electrons (initial polarization 38%), and the spectral distribution and the circular polarization of the emitted recombination radiation were measured. The initial kinetic energy of the electrons in the conduction band was varied between 5 and 1000 eV. The measurements of the spectral distribution show that the electrons are thermalized before recombination occurs, independent of their initial energy. An important thermalization process in this energy range is the excitation of crystal electrons by electron-hole pair creation. The circular polarization of the recombination radiation lies below 1% in the whole energy range. It decreases with increasing electron energy but is still of measurable magnitude at 100 eV in the case of GaAs 0.62 P 0.38 . The circular polarization is smaller for GaAs than for GaAs 0.62 P 0.38 , which we attribute to more efficient spin relaxation in GaAs

Scanning microwave microscopy applied to semiconducting GaAs structures

Science.gov (United States)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Photoluminescence of highly compensated GaAs doped with high concentration of Ge

Science.gov (United States)

Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

1999-12-01

We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Energy Technology Data Exchange (ETDEWEB)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Preparation and characterization of carbon/SiC nanowire/Na-doped carbonated hydroxyapatite multilayer coating for carbon/carbon composites

International Nuclear Information System (INIS)

Leilei, Zhang; Hejun, Li; Kezhi, Li; Shouyang, Zhang; Qiangang, Fu; Yulei, Zhang; Jinhua, Lu; Wei, Li

2014-01-01

Highlights: • CSH coatings were prepared by combination of magnetron sputter ion plating, CVD and UECD. • Na + and CO 3 2− were developed to co-substitute hydroxyapatite. • SiC nanowires were introduced into Na-doped carbonated hydroxyapatite. • CSH coatings showed excellent cell activity and cell proliferation behavior. - Abstract: A carbon/SiC nanowire/Na-doped carbonated hydroxyapatite multilayer coating (CSH coating) was prepared on carbon/carbon composites using a combination method of magnetron sputter ion plating, chemical vapor deposition and ultrasound-assisted electrochemical deposition procedure. The morphology, microstructure and chemical composition of the coating were investigated by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The results showed that the CSH coating was consisted of three components: carbon layer, SiC nanowires and Na-doped carbonated hydroxyapatite. The carbon layer provided a dense and uniform surface structure for the growth of SiC nanowires. The SiC nanowires exhibited a porous structure, favoring the infiltration of Na-doped carbonated hydroxyapatite crystals. The Na-doped carbonated hydroxyapatite could infiltrate into the pores of SiC nanowires and finally cover the SiC nanowires entirely with a needle shape. The osteoblast-like MG63 cells were employed to assess the in vitro biocompatibility of the CSH coating. The MG63 cells favorably spread and grew well across the CSH coating surface with plenty of filopods and microvilli, exhibiting excellent cell activity. Moreover, the CSH coating elicited higher cell proliferation as compared to bare carbon/carbon composites. In conclusion, the CSH offers great potential as a coating material for future medical application in hard tissue replacement

Preparation and characterization of carbon/SiC nanowire/Na-doped carbonated hydroxyapatite multilayer coating for carbon/carbon composites

Energy Technology Data Exchange (ETDEWEB)

Leilei, Zhang, E-mail: zhangleilei1121@aliyun.com; Hejun, Li; Kezhi, Li; Shouyang, Zhang; Qiangang, Fu; Yulei, Zhang; Jinhua, Lu; Wei, Li

2014-09-15

Highlights: • CSH coatings were prepared by combination of magnetron sputter ion plating, CVD and UECD. • Na{sup +} and CO{sub 3}{sup 2−} were developed to co-substitute hydroxyapatite. • SiC nanowires were introduced into Na-doped carbonated hydroxyapatite. • CSH coatings showed excellent cell activity and cell proliferation behavior. - Abstract: A carbon/SiC nanowire/Na-doped carbonated hydroxyapatite multilayer coating (CSH coating) was prepared on carbon/carbon composites using a combination method of magnetron sputter ion plating, chemical vapor deposition and ultrasound-assisted electrochemical deposition procedure. The morphology, microstructure and chemical composition of the coating were investigated by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The results showed that the CSH coating was consisted of three components: carbon layer, SiC nanowires and Na-doped carbonated hydroxyapatite. The carbon layer provided a dense and uniform surface structure for the growth of SiC nanowires. The SiC nanowires exhibited a porous structure, favoring the infiltration of Na-doped carbonated hydroxyapatite crystals. The Na-doped carbonated hydroxyapatite could infiltrate into the pores of SiC nanowires and finally cover the SiC nanowires entirely with a needle shape. The osteoblast-like MG63 cells were employed to assess the in vitro biocompatibility of the CSH coating. The MG63 cells favorably spread and grew well across the CSH coating surface with plenty of filopods and microvilli, exhibiting excellent cell activity. Moreover, the CSH coating elicited higher cell proliferation as compared to bare carbon/carbon composites. In conclusion, the CSH offers great potential as a coating material for future medical application in hard tissue replacement.

Synthesis of Nitrogen-doped Carbon Nanotubes with Layered ...

African Journals Online (AJOL)

NICO

Nitrogen-doped carbon nanotubes (CNx) were synthesized by the catalytic chemical vapour deposition ... dispersed metal nanoparticles over oxide matrices can be obtained ..... 18 S.Y. Kim, J. Lee, C.W. Na, J. Park, K. Seo and B. Kim, Chem.

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

2017-01-15

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

Energy Technology Data Exchange (ETDEWEB)

Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

2011-07-01

Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

Ultrathin Nitrogen-Doped Carbon Layer Uniformly Supported on Graphene Frameworks as Ultrahigh-Capacity Anode for Lithium-Ion Full Battery.

Science.gov (United States)

Huang, Yanshan; Li, Ke; Yang, Guanhui; Aboud, Mohamed F Aly; Shakir, Imran; Xu, Yuxi

2018-03-01

The designable structure with 3D structure, ultrathin 2D nanosheets, and heteroatom doping are considered as highly promising routes to improve the electrochemical performance of carbon materials as anodes for lithium-ion batteries. However, it remains a significant challenge to efficiently integrate 3D interconnected porous frameworks with 2D tunable heteroatom-doped ultrathin carbon layers to further boost the performance. Herein, a novel nanostructure consisting of a uniform ultrathin N-doped carbon layer in situ coated on a 3D graphene framework (NC@GF) through solvothermal self-assembly/polymerization and pyrolysis is reported. The NC@GF with the nanosheets thickness of 4.0 nm and N content of 4.13 at% exhibits an ultrahigh reversible capacity of 2018 mA h g -1 at 0.5 A g -1 and an ultrafast charge-discharge feature with a remarkable capacity of 340 mA h g -1 at an ultrahigh current density of 40 A g -1 and a superlong cycle life with a capacity retention of 93% after 10 000 cycles at 40 A g -1 . More importantly, when coupled with LiFePO 4 cathode, the fabricated lithium-ion full cells also exhibit high capacity and excellent rate and cycling performances, highlighting the practicability of this NC@GF. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of thermal annealing on optical properties of implanted GaAs

NARCIS (Netherlands)

Kulik, M; Komarov, FF; Maczka, D

GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

X-ray characterization Si-doped InAs nanowires grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)

2011-07-01

Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.

Advanced LiTi2(PO4)3@N-doped carbon anode for aqueous lithium ion batteries

International Nuclear Information System (INIS)

He, Zhangxing; Jiang, Yingqiao; Meng, Wei; Zhu, Jing; Liu, Yang; Dai, Lei; Wang, Ling

2016-01-01

Highlights: • LiTi 2 (PO 4 ) 3 @N-doped carbon anode was prepared by in-situ coating approach for aqueous lithium ion batteries. • The well-proportioned N-doped carbon layer and loose nanoporous structure was obtained using urea as nitrogen source and pore former. • LiTi 2 (PO 4 ) 3 @N-doped carbon demonstrates excellent rate performance and good cycling stability. - Abstract: In this paper, LiTi 2 (PO 4 ) 3 @N-doped carbon anode has been synthesized by in situ carbon coating approach. The well-proportioned N-doped carbon layer and loose nanoporous structure was obtained by using urea as nitrogen source and pore former. LiTi 2 (PO 4 ) 3 @N-doped carbon as anode demonstrates much better rate capability than LiTi 2 (PO 4 ) 3 @carbon in ALIBs. The optimized anode delivers the discharge capacity of 93.7 mAh g −1 and 74.2 mAh g −1 at rates of 10C and 20C, 22.5 mAh g −1 and 50.0 mAh g −1 larger than that of LiTi 2 (PO 4 ) 3 @carbon. Moreover, LiTi 2 (PO 4 ) 3 @N-doped carbon exhibits excellent cycling performance with capacity retention of 84.3% at 5C after 1000 cycles. As verified, the well-proportioned N-doped carbon layer could reduce charge transfer resistance and improve electrical conductivity. The loose nanoporous structure could shorten pathway and facilitate diffusion for Li ion. Therefore, LiTi 2 (PO 4 ) 3 @N-doped carbon gets the superior electrochemical properties benefiting from those two characteristics.

Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

Science.gov (United States)

Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

2017-06-01

Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 5 cm 2 V -1 s -1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V -1 s -1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Directory of Open Access Journals (Sweden)

Fu Chen

2017-12-01

Full Text Available In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD. We have observed that the growth of GaN nucleation layers (NLs under N2 ambient leads to a large full width at half maximum (FWHM of (102 X-ray diffraction (XRD line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Science.gov (United States)

Chen, Fu; Sun, Shichuang; Deng, Xuguang; Fu, Kai; Yu, Guohao; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

2017-12-01

In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.

LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

International Nuclear Information System (INIS)

Kuriyama, K.; Sakai, K.; Okada, M.

1996-01-01

Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge Ga and Se As ) approaches ∼8x10 16 cm -3 , the LO-phonon endash plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degree C. copyright 1996 The American Physical Society

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

CERN Document Server

Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

2012-01-01

We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

Magnetic properties of zigzag (0,9 GaAs nanotube doped with 3d transition metals

Directory of Open Access Journals (Sweden)

R Fathi

2016-06-01

Full Text Available of 3d transition metals (Sc, Ti, Cr, Mn , Fe, Co, Ni in both far and close situations were studied based on spin polarised density functional theory using the generalized gradient approximation (LDA with SIESTA code. The electronic structures show that zigzag (0,9 GaAs nanotubes are non-magnetic semiconductors with direct band gap. It was revealed that doping of 11.11 % Fe and Mn concentrations substituted in Ga sites in ferromagnetic phase in far situation and Cr sites in ferromagnetic phase in near situation introduces half metallic behavior with %100 spin polarization. The unique structure of spin polarised energy levels is primarily attributed to strong hybridization of 3d transition metal and its nearest-neighbor As-4p orbitals. The results of this study can be useful for empirical studies on diluted magnetic semiconductors (DMSs and systemic investigation in 3d transitional metals. We suggest that GaAs nanotubes doped by transition metals would have a potential application as a spin polarised electron source for spintronic devices in the future.

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Directory of Open Access Journals (Sweden)

Wei-Cheng Kuo

2016-01-01

Full Text Available We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD at low growth temperature (180°C. The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD and spectroscopy ellipsometry (SE. The full width at half maximum (FWHM of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

Energy Technology Data Exchange (ETDEWEB)

Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku , Saitama 338-8570 (Japan); Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi [Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Kuboya, Shigeyuki; Onabe, Kentaro [Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Katayama, Ryuji [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-12-04

We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

Directory of Open Access Journals (Sweden)

K. F. Yarn

2003-01-01

group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.

Enhanced performance of proton exchange membrane fuel cell by introducing nitrogen-doped CNTs in both catalyst layer and gas diffusion layer

CSIR Research Space (South Africa)

Hou, S

2017-11-01

Full Text Available The performance of the proton exchange membrane fuel cell (PEMFC) is significantly improved through introducing nitrogen-doped carbon nanotubes (NCNTs) into the catalyst layer (CL) and microporous layer (MPL) of the membrane electrode assembly (MEA...

Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

International Nuclear Information System (INIS)

Nash, F.R.; Dixon, R.W.; Barnes, P.A.; Schumaker, N.E.

1975-01-01

The successful fabrication of high-quality DH GaAs lasers from a simplified three-layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority-carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direct and indirect excitation it is shown that a clearer understanding of the location and detrimental influences of defects in the GaAs laser structure may be obtained. For example, the width of the region of reduced luminescence associated with many defects is found to be very excitation dependent and is confirmed to arise fr []m reduced active region luminescence. The photoluminescent excitation techniques described should be useful in the study of other heterostructure devices and material systems

Secondary doping in polyaniline layers coated on multi-walled carbon nanotubes

Directory of Open Access Journals (Sweden)

Zhou Yi

2015-01-01

Full Text Available HC1 doped coaxial polyaniline/multiwalled carbon nanotubes (MWCNTs nanocomposites were first prepared by in–situ chemical polymerization of aniline monomers in the presence of MWCNTs with less structural defects. P-toluene sulfonic acid (TSA and 5-sulfosalicylic acid dihydrate (SSA redoped PANI/MWCNT nanocomposites were achieved after the as-prepared nanocomposites were treated by ammonia respectively. The redoped nanocomposites were characterized by field emission scanning electron microscopy, transmission electron microscopy, fourier transform infrared spectroscopy, Raman, X–ray diffraction, thermogravimetric analysis and cyclic voltammetry, respectively. The results indicated that the thermal stability and electrochemical behaviour of TSA doped PANI/MWCNT nanocomposites were better than that of SSA doped PANI/MWCNT nanocomposites.

Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

Science.gov (United States)

Sauncy, T.; Palsule, C. P.; Holtz, M.; Gangopadhyay, S.; Massie, S.

1996-01-01

We report results of a detailed temperature dependence study of photoluminescence lifetime and continuous emission properties in silicon-doped GaAs. The primary focus is on a defect-related emission at 1.269 eV (T=20 K). GaAs crystals were grown using molecular-beam epitaxy with most of the experiments conducted on a sample having a carrier concentration of 4.9×1018 cm-3. The intensity is seen to decrease above 100 K, with no corresponding decrease in the measured lifetime of 9.63+/-0.25 ns. The intensity decrease implies an activation energy of 19+/-2 meV, which is approximately one order of magnitude smaller than what was previously obtained for similar defects in Czochralski-grown GaAs with other dopants. We interpret our results in terms of a configuration coordinate model and obtain a more complete picture of the energy-level structure. The experiments indicate that the upper level in the recombination process is about 20 meV below the conduction-band continuum, with the lower state approximately 300 meV above the valence band. Our results are consistent with the identification of the corresponding defect complex microstructure as being a silicon-at-gallium substitution, weakly interacting with a gallium vacancy second-nearest neighbor, known as the Si-Y defect complex.

Thermal decomposition pathway of undoped and doped zinc layered gallate nanohybrid with Fe 3+, Co 2+ and Ni 2+ to produce mesoporous and high pore volume carbon material

Science.gov (United States)

Ghotbi, Mohammad Yeganeh; bin Hussein, Mohd Zobir; Yahaya, Asmah Hj; Abd Rahman, Mohd Zaki

2009-12-01

A series of brucite-like materials, undoped and doped zinc layered hydroxide nitrate with 2% (molar) Fe 3+, Co 2+ and Ni 2+ were synthesized. Organic-inorganic nanohybrid material with gallate anion as a guest, and zinc hydroxide nitrate, as an inorganic layered host was prepared by the ion-exchange method. The nanohybrid materials were heat-treated at various temperatures, 400-700 °C. X-ray diffraction, thermal analysis and also Fourier transform infrared results showed that incorporation of the doping agents within the zinc layered hydroxide salt layers has enhanced the heat-resistivity of the nanohybrid materials in the thermal decomposition pathway. Porous carbon materials can be obtained from the heat-treating the nanohybrids at 600 and 700 °C. Calcination of the nanohybrids at 700 °C under nitrogen atmosphere produces mesoporous and high pore volume carbon materials.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Science.gov (United States)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

Synthesis and Characterization Carbon Nanotubes Doped Carbon Aerogels

Science.gov (United States)

Xu, Yuelong; Yan, Meifang; Liu, Zhenfa

2017-12-01

Polycondensation of phloroglucinol, resorcinol and formaldehyde with carbon nanotube (CNT) as the additives, using sodium carbonate as the catalyst, leads to the formation of CNT - doped carbon aerogels. The structure of carbon aerogels (CAs) with carbon nanotubes (CNTs) were characterized by X-ray diffraction and scanning electron microscopy. The specific surface area, pore size distribution and pore volume were measured by surface area analyzer. The results show that when the optimum doping dosage is 5%, the specific surface area of CNT - doped carbon aerogel is up to 665 m2 g-1 and exhibit plentiful mesoporous.

n-Type Doping and Morphology of GaAs Nanowires in Aerotaxy

Energy Technology Data Exchange (ETDEWEB)

Metaferia, Wondwosen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sivakumar, Sudhakar [Lund University; Persson, Axel R. [Lund University; Geijselaers, Irene [Lund University; Wallenberg, L. Reine [Lund University; Deppert, Knut [Lund University; Samuelson, Lars [Lund University; Magnusson, Martin [Lund University

2018-04-17

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.

Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

International Nuclear Information System (INIS)

Bietti, S; Somaschini, C; Esposito, L; Sanguinetti, S; Frigeri, C; Fedorov, A; Geelhaar, L

2014-01-01

We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique. (paper)

Determination of the thickness of chemically removed thin layers on GaAs VPE structures

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K.; Nemeth-Sallay, M.; Nemcsics, A. (Research Inst. for Technical Physics, Hungarian Academy of Sciences, Budapest (Hungary))

1991-01-01

Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface during the device preparation processes, though the possible thinning of the active layer is small. Therefore a method allowing determination of thicknesses as small as at about 20 nm of the layer removed by chemical etching from GaAs VPE structures was applied. Using special multilayered structures and a continuous electrochemical carrier concentration depth profiling, the influence of the layer thickness inhomogeneity and of some measurement errors can be minimized. Some frequently used etchants and the influence of different - so called - non-etching processes were compared in different combinations. It was shown that besides the direct etching a change of the surface conditions occurs, which influences the etch rate in the succeeding etching procedure. (orig.).

Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

International Nuclear Information System (INIS)

Liu, Wenjiang; Deng, Xiaoqing; Cai, Shaohong

2016-01-01

The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

Energy Technology Data Exchange (ETDEWEB)

Liu, Wenjiang [Big Data and Information Engineering College of Guizhou University, Guiyang 550025 (China); Guizhou University of Finance and Economics, Guiyang 550025 (China); Deng, Xiaoqing, E-mail: xq-deng@163.com, E-mail: caish@mail.gufe.edu.cn [School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Cai, Shaohong, E-mail: xq-deng@163.com, E-mail: caish@mail.gufe.edu.cn [Guizhou University of Finance and Economics, Guiyang 550025 (China)

2016-07-15

The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

International Nuclear Information System (INIS)

Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

2002-01-01

In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

Energy Technology Data Exchange (ETDEWEB)

Kellogg, Isaiah D. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States); Koylu, Umit O. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States)

2010-11-01

Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration. (author)

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

Directory of Open Access Journals (Sweden)

Santiago Silvestre

2015-04-01

Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

MBE growth and characterization of GaAs1-x Sb x epitaxial layers on Si (0 0 1) substrates

International Nuclear Information System (INIS)

Toda, T.; Nishino, F.; Kato, A.; Kambayashi, T.; Jinbo, Y.; Uchitomi, N.

2006-01-01

We investigated the growth of GaAs 1- x Sb x (x=1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and micro-Raman scattering analysis. We confirmed that GaAs 1- x Sb x layers have been successfully grown on Si substrates by introducing AlSb layers

Direct Synthesis of Co-doped Graphene on Dielectric Substrates Using Solid Carbon Sources

Institute of Scientific and Technical Information of China (English)

Qi Wang; Pingping Zhang; Qiqi Zhuo; Xiaoxin Lv; Jiwei Wang; Xuhui Sun

2015-01-01

Direct synthesis of high-quality doped graphene on dielectric substrates without transfer is highly desired for simplified device processing in electronic applications.However,graphene synthesis directly on substrates suitable for device applications,though highly demanded,remains unattainable and challenging.Here,a simple and transfer-free synthesis of high-quality doped graphene on the dielectric substrate has been developed using a thin Cu layer as the top catalyst and polycyclic aromatic hydrocarbons as both carbon precursors and doping sources.N-doped and N,F-co-doped graphene have been achieved using TPB and F16Cu Pc as solid carbon sources,respectively.The growth conditions were systematically optimized and the as-grown doped graphene were well characterized.The growth strategy provides a controllable transfer-free route for high-quality doped graphene synthesis,which will facilitate the practical applications of graphene.

Shear deformation and relaxed lattice constant of (Ga,Mn)As layers on GaAs(113)A

Energy Technology Data Exchange (ETDEWEB)

Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, D-89069 Ulm (Germany)

2008-07-01

The shear deformation and the relaxed lattice constant of compressively strained (Ga,Mn)As layers with Mn concentrations of up to 5%, pseudomorphically grown on GaAs(113)A and GaAs(001) substrates by low-temperature molecular-beam epitaxy, have been studied by high resolution X-ray diffraction (HRXRD) measurements. Rocking curves reveal a triclinic distortion of the (113)A layers with a shear direction towards the [001] crystallographic axis, whereas the (001) layers are tetragonally distorted along [001]. The relaxed lattice constants were derived from {omega}-2{theta} scans for the symmetric (113) and (004) Bragg reflections, taking the elastic anisotropy of the cubic system into account. The increase of the lattice constant with Mn content has been found to be smaller for the (113)A layers than for the (001) layers, presumably due to the enhanced amount of excess As in the (113)A layers.

Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

Energy Technology Data Exchange (ETDEWEB)

Lastras-Martinez, A.; Lara-Velazquez, I.; Balderas-Navarro, R.E.; Ortega-Gallegos, J.; Guel-Sandoval, S.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi, SLP 78000 (Mexico)

2008-07-01

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs(001). Measurements were performed at temperatures of 580 C and 430 C, in both n and p-type doped films and for both (2 x 4) and c(4 x 4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 10{sup 16}-10{sup 19} cm{sup -3}. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

International Nuclear Information System (INIS)

Naddaf, M.; Saloum, S.

2008-12-01

Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. It has been found that etching parameters can be controlled to produce a considerably low optical reflectivity porous GaAs layer, attractive for use in solar cells. In addition, it has been observed that the deposition of plasma polymerized HMDSO thin film on porous GaAs surface can be utilized to produce a surface with novel optical properties interesting for solar cells and optoelectronic devices. (author)

Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

International Nuclear Information System (INIS)

Zhao Peng; Zhang Ying; Wang Pei-Ji; Zhang Zhong; Liu De-Sheng

2011-01-01

Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C 60 nanotube caps. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Sulfur passivation and contact methods for GaAs nanowire solar cells

International Nuclear Information System (INIS)

Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

2011-01-01

The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

Electron-spin dynamics in Mn-doped GaAs using time-resolved magneto-optical techniques

Science.gov (United States)

Akimov, I. A.; Dzhioev, R. I.; Korenev, V. L.; Kusrayev, Yu. G.; Zhukov, E. A.; Yakovlev, D. R.; Bayer, M.

2009-08-01

We study the electron-spin dynamics in p -type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin-relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin-relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

Creation of oxygen-enriched layers at the surface of GaAs single crystal

International Nuclear Information System (INIS)

Kulik, M.; Maczka, D.; Kobzev, A.P.

1999-01-01

The optical properties and the element depth profiles at the (100) plane high resistant and noncomposite GaAs single crystals implanted with In ions were investigated. The results have been compared with those obtained for virgin samples. The optic properties for all of the samples (implanted and not implanted, annealed and not annealed) have been measured using the ellipsometric method. The element depth profiles for the same samples have been obtained by the RBS and NRA techniques. It has been shown that the post-implantation annealing at a temperature more than 600 deg C leads to a ten time increase in contents of oxygen atoms in the implanted layer with respect to the not annealed sample. The thickness of the transparence layer at the surface of GaAs single crystal increases also after implantation with In ions and subsequent annealing

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

Science.gov (United States)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Photoelectric properties of GaAs materials studied by pulsed laser techniques

International Nuclear Information System (INIS)

Aguir, Khalifa

1981-01-01

This research thesis addressed the photoelectric properties of single-crystal or epitaxial GaAs (N doped or P doped) materials. The objective is to characterize and to improve the electric quality of these materials and associated components, notably for the production of high performance solar cells for ground-based or space-based applications. More particularly, this research aimed at using an excitation by a pulsed laser to analyse recombination and trapping properties of carriers created by photo-excitation, and also at studying the effect of low doses of particle irradiation on the carrier properties. Thus, the author describes conduction characteristics of two different N-type epitaxial layers, discusses carrier excitation and recombination processes which may occur in semiconductors, and proposes an overview of trapping phenomena. Photoelectric properties of the considered epitaxial layers are then studied and discussed

Highly Efficient Electrocatalysts for Oxygen Reduction Reaction Based on 1D Ternary Doped Porous Carbons Derived from Carbon Nanotube Directed Conjugated Microporous Polymers

KAUST Repository

He, Yafei; Gehrig, Dominik; Zhang, Fan; Lu, Chenbao; Zhang, Chao; Cai, Ming; Wang, Yuanyuan; Laquai, Fré dé ric; Zhuang, Xiaodong; Feng, Xinliang

2016-01-01

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.One-dimensional (1D) porous materials have shown great potential for gas storage and separation, sensing, energy storage, and conversion. However, the controlled approach for preparation of 1D porous materials, especially porous organic materials, still remains a great challenge due to the poor dispersibility and solution processability of the porous materials. Here, carbon nanotube (CNT) templated 1D conjugated microporous polymers (CMPs) are prepared using a layer-by-layer method. As-prepared CMPs possess high specific surface areas of up to 623 m2 g-1 and exhibit strong electronic interactions between p-type CMPs and n-type CNTs. The CMPs are used as precursors to produce heteroatom-doped 1D porous carbons through direct pyrolysis. As-produced ternary heteroatom-doped (B/N/S) 1D porous carbons possess high specific surface areas of up to 750 m2 g-1, hierarchical porous structures, and excellent electrochemical-catalytic performance for oxygen reduction reaction. Both of the diffusion-limited current density (4.4 mA cm-2) and electron transfer number (n = 3.8) for three-layered 1D porous carbons are superior to those for random 1D porous carbon. These results demonstrate that layered and core-shell type 1D CMPs and related heteroatom-doped 1D porous carbons can be rationally designed and controlled prepared for high performance energy-related applications.

Highly Efficient Electrocatalysts for Oxygen Reduction Reaction Based on 1D Ternary Doped Porous Carbons Derived from Carbon Nanotube Directed Conjugated Microporous Polymers

KAUST Repository

He, Yafei

2016-10-11

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.One-dimensional (1D) porous materials have shown great potential for gas storage and separation, sensing, energy storage, and conversion. However, the controlled approach for preparation of 1D porous materials, especially porous organic materials, still remains a great challenge due to the poor dispersibility and solution processability of the porous materials. Here, carbon nanotube (CNT) templated 1D conjugated microporous polymers (CMPs) are prepared using a layer-by-layer method. As-prepared CMPs possess high specific surface areas of up to 623 m2 g-1 and exhibit strong electronic interactions between p-type CMPs and n-type CNTs. The CMPs are used as precursors to produce heteroatom-doped 1D porous carbons through direct pyrolysis. As-produced ternary heteroatom-doped (B/N/S) 1D porous carbons possess high specific surface areas of up to 750 m2 g-1, hierarchical porous structures, and excellent electrochemical-catalytic performance for oxygen reduction reaction. Both of the diffusion-limited current density (4.4 mA cm-2) and electron transfer number (n = 3.8) for three-layered 1D porous carbons are superior to those for random 1D porous carbon. These results demonstrate that layered and core-shell type 1D CMPs and related heteroatom-doped 1D porous carbons can be rationally designed and controlled prepared for high performance energy-related applications.

Carbon doped ZnO: Synthesis, characterization and interpretation

International Nuclear Information System (INIS)

Mishra, D.K.; Mohapatra, J.; Sharma, M.K.; Chattarjee, R.; Singh, S.K.; Varma, Shikha; Behera, S.N.; Nayak, Sanjeev K.; Entel, P.

2013-01-01

A novel thermal plasma in-flight technique has been adopted to synthesize nanocrystalline ZnO and carbon doped nanocrystalline ZnO matrix. Transmission electron microscopy (TEM) studies on these samples show the average particle sizes to be around 32 nm for ZnO and for carbon doped ZnO. An enhancement of saturation magnetization in nanosized carbon doped ZnO matrix by a factor of 3.8 has been found in comparison to ZnO nanoparticles at room temperature. Raman measurement clearly indicates the presence of Zn–C complexes surrounded by ZnO matrix in carbon doped ZnO. This indicates that the ferromagnetic signature in carbon doped ZnO arises from the creation of defects or the development of oxy-carbon clusters, in the carbon doped ZnO system. Theoretical studies based on density functional theory also support the experimental analyses. - Highlights: ► Synthesis of nanocrystalline ZnO and carbon doped ZnO matrix by inflight thermal plasma reactor. ► Enhancement of ferromagnetism in nanosized carbon doped ZnO in comparison to ZnO nanoparticles. ► Raman measurement indicates the presence of Zn–C complexes surrounded by ZnO matrix. ► Ferromagnetic signature in carbon doped ZnO arises from the development of oxy-carbon clusters. ► DFT supports experimental evidence of ferromagnetism in C doped ZnO nanoparticles.

Highly doped layer for tunnel junctions in solar cells

Science.gov (United States)

Fetzer, Christopher M.

2017-08-01

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Efficient small-molecule organic solar cells incorporating a doped buffer layer

Energy Technology Data Exchange (ETDEWEB)

Chou, Dei-Wei [Department of aviation and Communication Electronics, Air Force Institute of Technology, Kaohsiung 820, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung 831, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Nanzih, Kaohsiung 811, Taiwan (China); Tsao, Yao-Jen [Department of Applied Physics, National University of Kaohsiung, Nanzih, Kaohsiung 811, Taiwan (China); Chen, Wen-Ray; Meen, Teen-Hang [Department of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin 632, Taiwan (China)

2013-06-01

Small-molecule organic solar cells (OSCs) with an optimized structure of indium tin oxide/poly (3,4-ethylenedioxythioxythiophene):poly(styrenesulfonate)/copper phthalocyanine (CuPc) (10 nm)/CuPc: fullerene (C{sub 60}) mixed (20 nm)/C{sub 60} (20 nm)/4,7-diphenyl-1,10-phenanthroline (BPhen) (5 nm)/Ag were fabricated. In this study, the cesium carbonate-doped BPhen (Cs{sub 2}CO{sub 3}:BPhen) was adopted as the buffer layer to enhance the efficiency of the OSCs. The photovoltaic parameters of the OSCs, such as the short-circuit current density and fill factor, depend on the doping concentration of Cs{sub 2}CO{sub 3} in the BPhen layer. The cell with a Cs{sub 2}CO{sub 3}:BPhen (1:4) cathode buffer layer exhibits a power conversion efficiency (PCE) of 3.51%, compared to 3.37% for the device with the pristine BPhen layer. The enhancement of PCE was attributed to the energy-level alignment between the C{sub 60} layer and the Cs{sub 2}CO{sub 3}:BPhen layer. In addition, the characterization measured using atomic force microscopy shows that the Cs{sub 2}CO{sub 3}:BPhen layers have smoother surfaces. - Highlight: • Cs2CO3-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) cathode buffer layer. • Cs2CO3:BPhen layer with different ratios affects organic solar cells performance. • Cell with 1:4 (Cs2CO3:BPhen) ratio shows 3.51% power conversion efficiency.

High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

Energy Technology Data Exchange (ETDEWEB)

Allard Jr, Lawrence Frederick [ORNL

2016-01-01

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION

Optical characterization of MOVPE grown δ-InAs layers in GaAs

Czech Academy of Sciences Publication Activity Database

Hazdra, P.; Voves, J.; Hulicius, Eduard; Pangrác, Jiří

2005-01-01

Roč. 2, č. 4 (2005), s. 1319-1324 ISSN 1610-1634 R&D Projects: GA AV ČR(CZ) IAA1010318; GA MŠk(CZ) LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : δ-layer * MOVPE * GaAs * photoluminescence * photocurrent * photoreflectance Subject RIV: BM - Solid Matter Physics ; Magnetism

A synthesis method for cobalt doped carbon aerogels with high surface area and their hydrogen storage properties

Energy Technology Data Exchange (ETDEWEB)

Tian, H.Y.; Buckley, C.E. [Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth 6845, WA (Australia); CSIRO National Hydrogen Materials Alliance, CSIRO Energy Centre, 10 Murray Dwyer Circuit, Steel River Estate, Mayfield West, NSW 2304 (Australia); Sheppard, D.A.; Paskevicius, M. [Department of Imaging and Applied Physics, Curtin University of Technology, GPO Box U 1987, Perth 6845, WA (Australia); Hanna, N. [CSIRO Process Science and Engineering, Waterford, WA (Australia)

2010-12-15

Carbon aerogels doped with nanoscaled Co particles were prepared by first coating activated carbon aerogels using a wet-thin layer coating process. The resulting metal-doped carbon aerogels had a higher surface area ({proportional_to}1667 m{sup 2} g{sup -1}) and larger micropore volume ({proportional_to}0.6 cm{sup 3} g{sup -1}) than metal-doped carbon aerogels synthesised using other methods suggesting their usefulness in catalytic applications. The hydrogen adsorption behaviour of cobalt doped carbon aerogel was evaluated, displaying a high {proportional_to}4.38 wt.% H{sub 2} uptake under 4.6 MPa at -196 C. The hydrogen uptake capacity with respect to unit surface area was greater than for pure carbon aerogel and resulted in {proportional_to}1.3 H{sub 2} (wt. %) per 500 m{sup 2} g{sup -1}. However, the total hydrogen uptake was slightly reduced as compared to pure carbon aerogel due to a small reduction in surface area associated with cobalt doping. The improved adsorption per unit surface area suggests that there is a stronger interaction between the hydrogen molecules and the cobalt doped carbon aerogel than for pure carbon aerogel. (author)

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

2007-04-23

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

International Nuclear Information System (INIS)

Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

2007-01-01

We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

Design optimization of GaAs betavoltaic batteries

International Nuclear Information System (INIS)

Chen Haiyanag; Jiang Lan; Chen Xuyuan

2011-01-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm -2 63 Ni, the open circuit voltage of the optimized batteries is about ∼0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P + PN + junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm -2 , which indicates a carrier diffusion length of less than 1 μm. The overall results show that multi-layer P + PN + junctions are the preferred structures for GaAs betavoltaic battery design.

Synthesis of MnO nano-particle@Flourine doped carbon and its application in hybrid supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Qu, Deyu; Feng, Xiaoke [Department of Chemistry, School of Chemistry, Chemical Engineering and Life Science, Wuhan University of Technology, Wuhan 430070, Hubei (China); Wei, Xi [School of Materials Science and Engineering, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, Hubei (China); Guo, Liping [Department of Chemistry, School of Chemistry, Chemical Engineering and Life Science, Wuhan University of Technology, Wuhan 430070, Hubei (China); Cai, Haopeng, E-mail: cai_haopeng@whut.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, Hubei (China); Tang, Haolin [School of Materials Science and Engineering, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, Hubei (China); Xie, Zhizhong, E-mail: zhizhong_xie@163.com [Department of Chemistry, School of Chemistry, Chemical Engineering and Life Science, Wuhan University of Technology, Wuhan 430070, Hubei (China)

2017-08-15

Highlights: • A Fluorine doped carbon encapsulated MnO nanoparticle material was fabricated through a self-assembly method. • Nafion ionomers was used as the fluorine and carbon precursor. • A lithium ion supercapacitor was assemblied by using MnO@FC and porous carbon. • A stable energy density as well as superior cycling stability were demonstrated in this hybrid system. - Abstract: A flourine doped carbon materials encapsulated MnO nano-particle was synthesized through a self-assembly method. The MnO nano-crystal covered with a thin layer of graphite were achieved. This hybrid MnO/carbon materials were employed as negative electrode in a new lithium ion hybrid supercapacitor, while the electrochemical double-layer porous carbon served as positive electrode. The electrochemical performances of this hybrid device were investigated and exhibited relative high capacity upto 40 mAh g{sup −1} in an applied current of 200 mAh g{sup −1}, good rate performance as well as superior cycling stability.

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

Science.gov (United States)

Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

2018-02-01

Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

Mobility-lifetime product in epitaxial GaAs X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Sun, G.C. [GESEC R and D, Universite Pierre et Marie Curie, Bat.11, 140 rue de Lourmel, 75015 Paris (France)]. E-mail: guocsun@ccr.jussieu.fr; Zazoui, M. [LPMC, Faculte des Sciences et Techniques-Mohammedia, B.P. 146 Bd Hassan II, Mohammedia, Maroc (Morocco); Talbi, N. [Faculte des Sciences, Universite de Gabes, Route de Medenine, 6029 Gabes (Tunisia); Khirouni, K. [Faculte des Sciences, Universite de Gabes, Route de Medenine, 6029 Gabes (Tunisia); Bourgoin, J.C. [GESEC R and D, Universite Pierre et Marie Curie, Bat.11, 140 rue de Lourmel, 75015 Paris (France)

2007-04-01

Self-supported thick (200-500 {mu}m), non-intentionally doped, epitaxial GaAs layers are good candidates for X-ray imaging for the following reasons. Their electronic properties are homogeneous over large areas, they can be grown at low cost, the technology to realize pixel detectors of various size is standard, the defect concentration is low and the fluorescence yield is small. Here, we characterize the defects present in the material and evaluate the mobility-lifetime product, using Deep Level Transient Spectroscopy combined with current-voltage and charge collection measurements.

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Directory of Open Access Journals (Sweden)

An-Jye Tzou

2016-06-01

Full Text Available This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT with a 1702 V breakdown voltage (BV and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.

Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

V. Prajzler

2008-01-01

Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

Science.gov (United States)

Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

2018-02-01

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

Science.gov (United States)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

DEFF Research Database (Denmark)

Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

1997-01-01

We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

Crystal structure of LT GaAs layers before and after annealing

International Nuclear Information System (INIS)

Litiental-Weber, Z.

1992-01-01

In this paper the structural quality of GaAs layers grown at low temperatures by solid-source and gas-source MBE at different growth conditions is described. Dependence on the growth temperature and concentration of As [expressed at As/Ga beam equivalent pressure (BEP)] used for the growth is discussed. A higher growth temperature is required top obtain the same monocrystalling layer thickness with increased BEP. The annealing of these layers is associated with the formation of As precipitates. Semicoherent precipitates with lowest formation energies are formed in the monocrystalline parts of the layers grown with the lowest BEP. Precipitates with higher formation energies are formed when higher BEP is applied; they are also formed in the vicinity of structural defects. Formation of As precipitates releases strain in the layers. Arsenic precipitates are not formed in annealed ternary (InAlAs) layers despite their semi-insulating properties. The role of As precipitates in semi-insulating properties and the short lifetime of minority carriers in these layers is discussed

Synthesis of Antimony Doped Amorphous Carbon Films

Science.gov (United States)

Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

2013-06-01

We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

Synthesis of Antimony Doped Amorphous Carbon Films

International Nuclear Information System (INIS)

Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

2013-01-01

We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

Nitrogen-doped carbon aerogels for electrical energy storage

Science.gov (United States)

Campbell, Patrick; Montalvo, Elizabeth; Baumann, Theodore F.; Biener, Juergen; Merrill, Matthew; Reed, Eric W.; Worsley, Marcus A.

2017-10-03

Disclosed here is a method for making a nitrogen-doped carbon aerogel, comprising: preparing a reaction mixture comprising formaldehyde, at least one nitrogen-containing resorcinol analog, at least one catalyst, and at least one solvent; curing the reaction mixture to produce a wet gel; drying the wet gel to produce a dry gel; and thermally annealing the dry gel to produce the nitrogen-doped carbon aerogel. Also disclosed is a nitrogen-doped carbon aerogel obtained according to the method and a supercapacitor comprising the nitrogen-doped carbon aerogel.

Atomistic spin dynamics simulations on Mn-doped GaAs and CuMn

Energy Technology Data Exchange (ETDEWEB)

Hellsvik, Johan, E-mail: johan.hellsvik@fysik.uu.s [Department of Physics and Materials Science, Uppsala University, Box 530, SE-751 21 Uppsala (Sweden)

2010-01-01

The magnetic dynamical behavior of two random alloys have been investigated in atomistic spin dynamics (ASD) simulations. For both materials, magnetic exchange parameters calculated with first principles electronic structure methods were used. From experiments it is well known that CuMn is a highly frustrated magnetic system and a good manifestation of a Heisenberg spin glass. In our ASD simulations the behavior of the autocorrelation function indicate spin glass behavior. The diluted magnetic semiconductor (DMS) Mn-doped GaAs is engineered with hopes of high enough Curie temperatures to operate in spintronic devices. Impurities such as As antisites and Mn interstitials change the exhange couplings from being mainly ferromagnetic to also have antiferromagnetic components. We explore how the resulting frustration affects the magnetization dynamics for a varying rate of As antisites.

Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula

Energy Technology Data Exchange (ETDEWEB)

Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Wagener, M.C. [Physics Department, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-01

InSb epilayers on GaAs substrates are analyzed using infrared reflectance spectroscopy, but employing a modified Drude oscillator formula. The modified formula enables the determination of 13 parameters: six dielectric parameters for both layer and substrate separately, as well as the thickness of the layer. The formula is tested against previously published data, and to characterize layers grown in this laboratory.

Characterization of InSb layers on GaAs substrates using infrared reflectance and a modified oscillator formula

International Nuclear Information System (INIS)

Engelbrecht, J.A.A.; Wagener, M.C.

2009-01-01

InSb epilayers on GaAs substrates are analyzed using infrared reflectance spectroscopy, but employing a modified Drude oscillator formula. The modified formula enables the determination of 13 parameters: six dielectric parameters for both layer and substrate separately, as well as the thickness of the layer. The formula is tested against previously published data, and to characterize layers grown in this laboratory.

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

2016-07-15

Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

Science.gov (United States)

Geydt, P.; Alekseev, P. A.; Dunaevskiy, M.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

2015-12-01

In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOx layer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.

Effect of the V{sub As}V{sub Ga} complex defect doping on properties of the semi-insulating GaAs

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Qiao, Hongbo; Shi, Wei; Li, Enling [Department of Applied Physics, Xi' an University of Technology, Xi' an 710054 (China)

2014-04-21

The different position V{sub As}V{sub Ga} cluster defect doping in semi-insulating (SI) GaAs has been studied by first-principles calculation based on hybrid density functional theory. Our calculated results show that EL6 level is formed due to the V{sub As}V{sub Ga} complex defect, which is very close to the experimental result. It provides the explanation of the absorption of laser with the wavelength beyond in semi-insulating GaAs. The formation energy of V{sub As}V{sub Ga} complex defect is found to decrease from surface to interior gradually. The conduction band minima and valence band maxima of GaAs (001) surface with the V{sub As}V{sub Ga} complex defect are all located at Γ point, and some defect levels are produced in the forbidden band. In contrast, the conduction band minima and valence band maxima of GaAs with the interior V{sub As}V{sub Ga} complex defect are not located at the same k-point, so it might involve the change of momentum in the electron transition process. The research will help strengthen the understanding of photoelectronic properties and effectively guide the preparation of the SI-GaAs materials.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

Science.gov (United States)

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

International Nuclear Information System (INIS)

McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

1999-01-01

The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

International Nuclear Information System (INIS)

Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

1984-01-01

Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

Na-ion capacitor using sodium pre-doped hard carbon and activated carbon

International Nuclear Information System (INIS)

Kuratani, Kentaro; Yao, Masaru; Senoh, Hiroshi; Takeichi, Nobuhiko; Sakai, Tetsuo; Kiyobayashi, Tetsu

2012-01-01

We assembled a sodium-ion capacitor (Na-IC) by combining sodium pre-doped hard carbon (HC) as the negative- and activated carbon (AC) as the positive-electrode. The electrochemical properties were compared with two lithium-ion capacitors (Li-ICs) in which the negative electrodes were prepared with Li pre-doped HC and mesocarbon microbeads (MCMB). The positive and negative electrodes were prepared using the established doctor blade method. The negative electrodes were galvanostatically pre-doped with Na or Li to 80% of the full capacity of carbons. The potential of the negative electrodes after pre-doping was around 0.0 V vs. Na/Na + or Li/Li + , which resulted in the higher output potential difference of the Na-IC and Li-ICs than that of the conventional electrochemical double-layer capacitors (EDLCs) because AC positive electrode works in the same principle both in the ion capacitors and in the EDLC. The state-of-charge of the negative electrode varied 80 ± 10% during the electrochemical charging and discharging. The capacity of the cell was evaluated using galvanostatic charge–discharge measurement. At the discharge current density of 10 mA cm −2 , the Na-IC maintained 70% of the capacity that obtained at the current density of 0.5 mA cm −2 , which was comparable to the Li-ICs. At 50 mA cm −2 , the capacities of the Li-IC(MCMB) and the Na-IC dropped to 20% whereas the Li-IC(HC) retained 30% of the capacity observed at 0.5 mA cm −2 . The capacities of the Na-IC and Li-ICs decreased by 9% and 3%, respectively, after 1000 cycles of charging and discharging.

Electron paramagnetic resonance of isolated Assub(Ga)+ antisite defect in neutron-transmutation doped semi-insulating GaAs

International Nuclear Information System (INIS)

Manasreh, M.O.; McDonald, P.F.; Kivlighn, S.A.; Minton, J.T.; Covington, B.C.

1988-01-01

The isolated Assub(Ga) antisite defect produced by the neutron-transmutation doping in semi-insulating GaAs was studied using the electron paramagnetic resonance technique. The results show that the optically induced quenching of the isolated Assub(Ga) + antisite defect is quite different from that of the EL2 center. Illumination with white light seems to always reduce the electron paramagnetic resonance spectrum suggesting that depopulation of the EL2 center does not introduce a noticeable change in the Assub(Ga) + antisite concentration. (author)

Synthesis of ultrathin nitrogen-doped graphitic carbon nanocages as advanced electrode materials for supercapacitor.

Science.gov (United States)

Tan, Yueming; Xu, Chaofa; Chen, Guangxu; Liu, Zhaohui; Ma, Ming; Xie, Qingji; Zheng, Nanfeng; Yao, Shouzhuo

2013-03-01

Synthesis of nitrogen-doped carbons with large surface area, high conductivity, and suitable pore size distribution is highly desirable for high-performance supercapacitor applications. Here, we report a novel protocol for template synthesis of ultrathin nitrogen-doped graphitic carbon nanocages (CNCs) derived from polyaniline (PANI) and their excellent capacitive properties. The synthesis of CNCs involves one-pot hydrothermal synthesis of Mn3O4@PANI core-shell nanoparticles, carbonization to produce carbon coated MnO nanoparticles, and then removal of the MnO cores by acidic treatment. The CNCs prepared at an optimum carbonization temperature of 800 °C (CNCs-800) have regular frameworks, moderate graphitization, high specific surface area, good mesoporosity, and appropriate N doping. The CNCs-800 show high specific capacitance (248 F g(-1) at 1.0 A g(-1)), excellent rate capability (88% and 76% capacitance retention at 10 and 100 A g(-1), respectively), and outstanding cycling stability (~95% capacitance retention after 5000 cycles) in 6 M KOH aqueous solution. The CNCs-800 can also exhibit great pseudocapacitance in 0.5 M H2SO4 aqueous solution besides the large electrochemical double-layer capacitance. The excellent capacitance performance coupled with the facile synthesis of ultrathin nitrogen-doped graphitic CNCs indicates their great application potential in supercapacitors.

Photo-Induced conductivity of heterojunction GaAs/Rare-Earth doped SnO2

Directory of Open Access Journals (Sweden)

Cristina de Freitas Bueno

2013-01-01

Full Text Available Rare-earth doped (Eu3+ or Ce3+ thin layers of tin dioxide (SnO2 are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+ or blue (Ce3+. The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs, or an ultraviolet light absorber sink (top RE-doped SnO2. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition.

Structural and optical properties of vapor-etched porous GaAs

Energy Technology Data Exchange (ETDEWEB)

Smida, A.; Laatar, F. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M., E-mail: mhdhassen@yahoo.fr [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-08-15

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO{sub 3} as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Structural and optical properties of vapor-etched porous GaAs

International Nuclear Information System (INIS)

Smida, A.; Laatar, F.; Hassen, M.; Ezzaouia, H.

2016-01-01

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Electrodeposition of Metal on GaAs Nanowires

Science.gov (United States)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

International Nuclear Information System (INIS)

Shcherbachev, Kirill; Bailey, Melanie J.

2011-01-01

An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

International Nuclear Information System (INIS)

Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

2008-01-01

The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

Carbon wrapped and doped TiO{sub 2} mesoporous nanostructure with efficient visible-light photocatalysis for NO removal

Energy Technology Data Exchange (ETDEWEB)

He, Di; Li, Yongli, E-mail: lyl@bjut.edu.cn; Wang, Inshu, E-mail: wangjsh@bjut.edu.cn; Wu, Junshu; Yang, Yilong; An, Qier

2017-01-01

Highlights: • Carbon wrapped and doped mesoporous titanium dioxide nanocrystals were fabricated. • Meso/micropores are generated on TiO{sub 2} surface caused by eliminating of carbon precursor. • Absorption edge is extended to visible region owing to the carbon-doping. • About 71% of NO is removed under visible light irradiation even in absence of moisture. - Abstract: Carbon wrapped and doped mesoporous anatase TiO{sub 2} nanocrystals were prepared by a hydrothermal approach in acetic acid aqueous containing chitosan. A designed post-thermal treatment was employed to enhance the incorporation between carbon and TiO{sub 2}. After hydrothermal process, mesoporous anatase TiO{sub 2} formed with wrapped by a few layers of carbon shell. Here chitosan was used as not only the template for the formation of mesopores, but also the carbon source toward the carbon layers coating. Furthermore, chitosan provided doping element into TiO{sub 2} lattice and induced to form Ti−C bond which caused Ti(III) with oxygen vacancies. The Ti(III)-oxygen vacancy are partly responsible for visible-light response and high photocatalytic activity, which can accelerate electron transfer thus inhibit photogenerated charge recombination. The photocatalytic activity was evaluated using photo-oxidation of gaseous NO under visible light irradiation as the probe reaction. In the optimum result, 71% of NO with starting concentration at ppb level was photo-degraded. Our results also showed that the photogenerated electrons played a key role in photodegradation of NO, as a result, the environmental humidity level had a negligible effect on the photocatalysis.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Superlattice doped layers for amorphous silicon photovoltaic cells

Science.gov (United States)

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

The nuclear reaction analysis (NRA) as a means for detecting carbon in GaAs and in source materials and additives

International Nuclear Information System (INIS)

Bethge, K.; Mader, A.; Michelmann, R.; Krauskopf, J.; Thee, P.; Meyer, J.D.

1991-01-01

The nuclear reaction ananlysis (NRA) on the basis of the reaction 12 C (d,p) 13 C is a method allowing the detection and description of both lateral and depth profiles of the presence of carbon in GaAs and in the source materials and additives. The NRA is an absolute method with a detection limit for C of approx. 4x10 15 cm 3 . The achievable detection range in depth under the experimental conditions goes from the surface down to 6 μm. Combined with channeling measurements, NRA is capable of identifying the position of carbon in the GaAs crystal lattice, and thus permits to examine the mobility of C in GaAs. (BBR) With 11 refs [de

Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

Science.gov (United States)

Steiner, S. A.; Baumann, T. F.; Kong, J.; Satcher, J. H.; Dresselhaus, M. S.

2007-02-20

We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

Energy Technology Data Exchange (ETDEWEB)

Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

2007-02-15

We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Directory of Open Access Journals (Sweden)

Takeshi Aoki

2015-08-01

Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs

Science.gov (United States)

Liu, S. G.; Narayan, S. Y.

1984-11-01

We report the use of tungsten-halogen lamps for rapid (-10 s) thermal annealing of ion-implanted (100) GaAs under AsH3/Ar and N2 atmospheres. Annealing under flowing AsH3/Ar was carried out without wafer encapsulation. Rapid capless annealing activated implants in GaAs with good mobility and surface morphology. Typical mobilities were 3700 4500 cm2/V-s for n-layers with about 2×1017cm-3 carrier concentration and 50 150 cm2/v-s for 0.1 5xl019 cm-3 doped p-layers. Rapid thermal annealing was performed in a vertical quartz tube where different gases (N2, AsH3/H2, AsH3/Ar) can be introduced. Samples were encapsulated with SiO when N2 was used. Tungsten-halogen lamps of 600 or 1000 W were utilized for annealing GaAs wafers ranging from 1 to 10 cm2 in area and 0.025 to 0.040 cm in thickness. The transient temperature at the wafer position was monitored using a fine thermocouple. We carried out experiments for energies of 30 to 200 keV, doses of 2×1012 to 1×1015 cm-2, and peak temperatures ranging from 600 to 1000‡C. Most results quoted are in the 700 to 870‡C temperature range. Data on implant conditions, optimum anneal conditions, electrical characteristics, carrier concentration profiles, and atomic profiles of the implanted layers are described.

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Directory of Open Access Journals (Sweden)

Amann Andreas

2011-01-01

Full Text Available Abstract Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.

Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Y. H. Lin

2015-10-01

Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

Hierarchically structured, nitrogen-doped carbon membranes

KAUST Repository

Wang, Hong

2017-08-03

The present invention is a structure, method of making and method of use for a novel macroscopic hierarchically structured, nitrogen-doped, nano-porous carbon membrane (HNDCMs) with asymmetric and hierarchical pore architecture that can be produced on a large-scale approach. The unique HNDCM holds great promise as components in separation and advanced carbon devices because they could offer unconventional fluidic transport phenomena on the nanoscale. Overall, the invention set forth herein covers a hierarchically structured, nitrogen-doped carbon membranes and methods of making and using such a membranes.

ECV profiling of GaAs and GaN HEMT heterostructures

Science.gov (United States)

Yakovlev, G.; Zubkov, V.

2018-03-01

AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Ultrathin nitrogen-doped graphitized carbon shell encapsulating CoRu bimetallic nanoparticles for enhanced electrocatalytic hydrogen evolution

Science.gov (United States)

Xu, You; Li, Yinghao; Yin, Shuli; Yu, Hongjie; Xue, Hairong; Li, Xiaonian; Wang, Hongjing; Wang, Liang

2018-06-01

Design of highly active and cost-effective electrocatalysts is very important for the generation of hydrogen by electrochemical water-splitting. Herein, we report the fabrication of ultrathin nitrogen-doped graphitized carbon shell encapsulating CoRu bimetallic nanoparticles (CoRu@NCs) and demonstrate their promising feasibility for efficiently catalyzing the hydrogen evolution reaction (HER) over a wide pH range. The resultant CoRu@NC nanohybrids possess an alloy–carbon core–shell structure with encapsulated low-ruthenium-content CoRu bimetallic alloy nanoparticles (10–30 nm) as the core and ultrathin nitrogen-doped graphitized carbon layers (2–6 layers) as the shell. Remarkably, the optimized catalyst (CoRu@NC-2 sample) with a Ru content as low as 2.04 wt% shows superior catalytic activity and excellent durability for HER in acidic, neutral, and alkaline conditions. This work offers a new method for the design and synthesis of non-platium-based electrocatalysts for HER in all-pH.

Nitrogen-doped carbon based on peptides of hair as electrode materials for surpercapacitors

International Nuclear Information System (INIS)

Guo, Zihan; Zhou, Qingwen; Wu, Zhaojun; Zhang, Zhiguo; Zhang, Wen; Zhang, Yao; Li, Lijun; Cao, Zhenzhu; Wang, Hong; Gao, Yanfang

2013-01-01

Highlights: • Hair was directly carbonized by environmental and energy-saving methods. • Hair was utilized to prepare nitrogen-doped carbon materials for supercapacitor. • A new approache for preparing nitrogen-rich active carbon from biomass waste of hair-like precursor. • Hair-based carbon having a non-crystalline layered structure and excellent capacitive performance. -- Abstract: Hair, a high-nitrogen energetic material, is utilized as a precursor for nitrogen-doped porous carbon. The preparation procedures for obtaining carbon from hair are very simple, namely, reductant or deionized water activation process followed by hair carbonization under argon atmosphere at 800 °C for 2 h. The samples are characterized through scanning electron microscopy, transmission electron microscopy, X-ray diffraction, nitrogen adsorption, and X-ray photoelectron microscopy. The carbon samples are tested as electrode materials in supercapacitors in a three-electrode system. The carbon (soaked in deionized water at 80 °C) presents relatively low specific surface areas (441.34 m 2 g −1 ) and shows higher capacitance (154.5 F g −1 ) compared with nitrogen-free commercial activated carbons (134.5 F g −1 ) at 5 A g −1 . The capacitance remains at 130.5 F g −1 even when the current load is increased to 15 A g −1 . The capacitance loss is only 5% in 6 M KOH after 10,000 charge and discharge cycles at 5 A g −1 . It is the unique microstructure after activation processing and electroactive nitrogen functionalities that enable the carbon obtained through a simple, ecological, and economical process to be utilized as a potential electrode material for electrical double-layer capacitors

Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

International Nuclear Information System (INIS)

García-Cervantes, H.; Rodríguez-Vargas, I.

2014-01-01

We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n 2DA and n 2DB , and the same well width. The Thomas-Fermi approximation, the semi-empirical sp 3 s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures

Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

García-Cervantes, H.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

2014-05-15

We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.

Improving the electrical properties of graphene layers by chemical doping

International Nuclear Information System (INIS)

Khan, Muhammad Farooq; Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Eom, Jonghwa

2014-01-01

Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO 3 ) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO 3 . The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO 3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics. (paper)

Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

Energy Technology Data Exchange (ETDEWEB)

Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

2017-10-15

This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

Preparation of nitrogen-doped carbon tubes

Science.gov (United States)

Chung, Hoon Taek; Zelenay, Piotr

2015-12-22

A method for synthesizing nitrogen-doped carbon tubes involves preparing a solution of cyanamide and a suitable transition metal-containing salt in a solvent, evaporating the solvent to form a solid, and pyrolyzing the solid under an inert atmosphere under conditions suitable for the production of nitrogen-doped carbon tubes from the solid. Pyrolyzing for a shorter period of time followed by rapid cooling resulted in a tubes with a narrower average diameter.

Influence of a Thiolate Chemical Layer on GaAs (100 Biofunctionalization: An Original Approach Coupling Atomic Force Microscopy and Mass Spectrometry Methods

Directory of Open Access Journals (Sweden)

Alex Bienaime

2013-10-01

Full Text Available Widely used in microelectronics and optoelectronics; Gallium Arsenide (GaAs is a III-V crystal with several interesting properties for microsystem and biosensor applications. Among these; its piezoelectric properties and the ability to directly biofunctionalize the bare surface, offer an opportunity to combine a highly sensitive transducer with a specific bio-interface; which are the two essential parts of a biosensor. To optimize the biorecognition part; it is necessary to control protein coverage and the binding affinity of the protein layer on the GaAs surface. In this paper; we investigate the potential of a specific chemical interface composed of thiolate molecules with different chain lengths; possessing hydroxyl (MUDO; for 11-mercapto-1-undecanol (HS(CH211OH or carboxyl (MHDA; for mercaptohexadecanoic acid (HS(CH215CO2H end groups; to reconstitute a dense and homogeneous albumin (Rat Serum Albumin; RSA protein layer on the GaAs (100 surface. The protein monolayer formation and the covalent binding existing between RSA proteins and carboxyl end groups were characterized by atomic force microscopy (AFM analysis. Characterization in terms of topography; protein layer thickness and stability lead us to propose the 10% MHDA/MUDO interface as the optimal chemical layer to efficiently graft proteins. This analysis was coupled with in situ MALDI-TOF mass spectrometry measurements; which proved the presence of a dense and uniform grafted protein layer on the 10% MHDA/MUDO interface. We show in this study that a critical number of carboxylic docking sites (10% is required to obtain homogeneous and dense protein coverage on GaAs. Such a protein bio-interface is of fundamental importance to ensure a highly specific and sensitive biosensor.

Experimental studies of the charge limit phenomenon in NEA GaAs photocathodes

International Nuclear Information System (INIS)

Tang, H.; Alley, R.K.; Aoyagi, H.; Clendenin, J.E.; Frisch, J.C.; Mulhollan, G.A.; Saez, P.J.; Schultz, D.C.; Turner, J.L.

1994-06-01

Negative electron affinity GaAs photocathodes have been in continuous use at SLAC for generating polarized electron beams since early 1992. If the quantum efficiency of a GaAs cathode is below a critical value, the maximum photoemitted charge with photons of energies close to the band gap in a 2-ns pulse is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this novel charge limit phenomenon in a variety of GaAs photocathodes of different structures and doping densities. We find that the charge limit is strongly dependent on the cathode's quantum efficiency and the extraction electric field, and to a lesser degree on the excitation laser wavelength. In addition, we show that the temporal behavior of the charge limit depends critically on the doping density

Quantum dot laser optimization: selectively doped layers

Science.gov (United States)

Korenev, Vladimir V.; Konoplev, Sergey S.; Savelyev, Artem V.; Shernyakov, Yurii M.; Maximov, Mikhail V.; Zhukov, Alexey E.

2016-08-01

Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics.

Quantum dot laser optimization: selectively doped layers

International Nuclear Information System (INIS)

Korenev, Vladimir V; Konoplev, Sergey S; Savelyev, Artem V; Shernyakov, Yurii M; Maximov, Mikhail V; Zhukov, Alexey E

2016-01-01

Edge emitting quantum dot (QD) lasers are discussed. It has been recently proposed to use modulation p-doping of the layers that are adjacent to QD layers in order to control QD's charge state. Experimentally it has been proven useful to enhance ground state lasing and suppress the onset of excited state lasing at high injection. These results have been also confirmed with numerical calculations involving solution of drift-diffusion equations. However, deep understanding of physical reasons for such behavior and laser optimization requires analytical approaches to the problem. In this paper, under a set of assumptions we provide an analytical model that explains major effects of selective p-doping. Capture rates of elections and holes can be calculated by solving Poisson equations for electrons and holes around the charged QD layer. The charge itself is ruled by capture rates and selective doping concentration. We analyzed this self-consistent set of equations and showed that it can be used to optimize QD laser performance and to explain underlying physics. (paper)

Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

Energy Technology Data Exchange (ETDEWEB)

Di Mario, Lorenzo [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Turchini, Stefano, E-mail: stefano.turchini@cnr.it [ISM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Zamborlini, Giovanni; Feyer, Vitaly [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Tian, Lin [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Schneider, Claus M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany); Rubini, Silvia [IOM-CNR, TASC Laboratory, Basovizza 34149, Trieste (Italy); Martelli, Faustino, E-mail: faustino.martelli@cnr.it [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy)

2016-11-15

Highlights: • The Schottky barrier at the interface between Cu and GaAs nanowires was measured. • Individual nanowires were investigated by X-ray Photoemission Microscopy. • The Schottky barrier at different positions along the nanowire was evaluated. - Abstract: We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

Subnanosecond linear GaAs photoconductive switching, revision 1

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Biomolecules Electrochemical Sensing Properties of a PMo11V@N-Doped Few Layer Graphene Nanocomposite

Directory of Open Access Journals (Sweden)

Diana M. Fernandes

2015-05-01

Full Text Available A novel hybrid nanocomposite, PMo11V@N-doped few layer graphene, was prepared by a one-step protocol through direct immobilization of the tetrabutylammonium salt of a vanadium-substituted phosphomolybdate (PMo11V onto N-doped few layer graphene (N-FLG. The nanocomposite characterization by FTIR and XPS confirmed its successful synthesis. Glassy carbon modified electrodes with PMo11V and PMo11V@N-FLG showed cyclic voltammograms consistent with surface-confined redox processes attributed to Mo-centred reductions (MoVI→MoV and a vanadium reduction (VV→VIV. Furthermore, PMo11V@N-FLG modified electrodes showed good stability and well-resolved redox peaks with high current intensities. The observed enhancement of PMo11V electrochemical properties is a consequence of a strong electronic communication between the POM and the N-doped few layer graphene. Additionally, the electro-catalytic and sensing properties towards acetaminophen (AC and theophylline (TP were evaluated by voltammetric techniques using a glassy carbon electrode modified with PMo11V@N-FLG. Under the conditions used, the square wave voltammetric peak current increased linearly with AC concentration in the presence of TP, but showing two linear ranges: 1.2 × 10−6 to 1.2 × 10−4 and 1.2 × 10−4 to 4.8 × 10−4 mol dm−3, with different AC sensitivity values, 0.022 A/mol dm−3 and 0.035 A/mol dm−3, respectively (detection limit, DL = 7.5 × 10−7 mol dm−3.

Silver doped metal layers for medical applications

International Nuclear Information System (INIS)

Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

2014-01-01

Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

Silver-doped metal layers for medical applications

International Nuclear Information System (INIS)

Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

2014-01-01

Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316 L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 to 4.32 at% for steel and from 3.04 to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficiency (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using a scratch test. The antibacterial efficiency changed with silver doping up to 99.9 %. Our investigation was focused on the minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness. (paper)

Hydrogen adsorption in doped porous carbons

International Nuclear Information System (INIS)

L Balan; L Duclaux; S Los

2005-01-01

Full text of publication follows: Hydrogen is a clean fuel that will be used in automotive transport when the problem of storage will be solved. The difficulties of H 2 storage (available space, security and performance, etc...) require a material that can store 5 weight % of hydrogen. Research is focused on new materials that can assume the constraints imposed by the automotive applications. Among these materials, the nano-structured carbons (nano-fibers and single walled carbon nano-tubes) were claimed to be promising by numerous authors [1-3]. The more promising carbon materials for hydrogen adsorption are those having micropores (i. e. single walled carbon nano-tubes and activated carbon), for which the energy of sorption of hydrogen molecules is theoretically higher [7-8]. Presently, the best performance of hydrogen adsorption was found in super-activated microporous carbons sorbing 5 weight % at 77 K, and almost 0.5 % at room temperature and 6 MPa [9]. Up to now, the performance of these materials can still be improved as the known mechanism of sorption in these carbon materials: physi-sorption controlled by Van der Waals attractive forces through London interaction is efficient at cryogenic temperatures (77 K) where the interaction between adsorbent and adsorbate becomes stronger. One way to improve the attractive interaction between adsorbent and molecule is to increase the forces due to the interaction of electrical field and induced dipole of the molecule. This can be theoretically tailored in carbon materials through the electron charge transfer by electron donors who can provide an increase in the electrical field at the surface of the adsorbent. Then, the doping of carbon substrates, appearing to be a promising method to increase the energy of adsorption has been proposed in recent papers as a solution to obtain good hydrogen adsorption properties at appropriate temperatures close to room temperatures [10-12]. Thus, we have studied the adsorption

Hydrogen adsorption in doped porous carbons

International Nuclear Information System (INIS)

Balan, L.; Duchaux, L.; Los, S.

2005-01-01

Full text of publication follows: Hydrogen is a clean fuel that will be used in automotive transport when the problem of storage will be solved. The difficulties of H 2 storage (available space, security and performance, etc...) require a material that can store 5 weight % of hydrogen. Research is focused on new materials that can assume the constraints imposed by the automotive applications. Among these materials, the nano-structured carbons (nano-fibers and single walled carbon nano-tubes) were claimed to be promising by numerous authors [1-3]. The more promising carbon materials for hydrogen adsorption are those having micropores (i. e. single walled carbon nano-tubes and activated carbon), for which the energy of sorption of hydrogen molecules is theoretically higher [7- 8]. Presently, the best performance of hydrogen adsorption was found in super-activated micro-porous carbons sorbing 5 weight % at 77 K, and almost 0.5 % at room temperature and 6 MPa [9]. Up to now, the performance of these materials can still be improved as the known mechanism of sorption in these carbon materials: physisorption controlled by Van der Waals attractive forces through London interaction is efficient at cryogenic temperatures (77 K) where the interaction between adsorbent and adsorbate becomes stronger. One way to improve the attractive interaction between adsorbent and molecule is to increase the forces due to the interaction of electrical field and induced dipole of the molecule. This can be theoretically tailored in carbon materials through the electron charge transfer by electron donors who can provide an increase in the electrical field al the surface of the adsorbent. Then, the doping of carbon substrates, appearing to be a promising method to increase the energy of adsorption has been proposed in recent papers as a solution to obtain good hydrogen adsorption properties at appropriate temperatures close to room temperatures [10-12]. Thus, we have studied the adsorption

Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

Science.gov (United States)

Maida, Osamu; Tabuchi, Tomohiro; Ito, Toshimichi

2017-12-01

We have developed a new fabrication process to decrease the effective activation energy of B atoms doped in diamond without a significant decrease in the carrier mobility by fabricating heavily B-doped clusters with very low mobility which are embedded in lightly-B-doped diamond layers. The resistivities of the heavily B-doped and unintentionally B-doped diamond stacked layers had almost no temperature dependence, suggesting the presence of an impurity-band conduction in these diamond layers. On the other hand, the resistivities of the samples after the embedding growth process of the stacked layers that had been appropriately divided to innumerable small clusters by means of a suitable etching process increased with decreasing the temperature from 330 to 130 K. The effective activation energies and Hall mobilities at room temperature of both samples were estimated to be 0.21 eV, 106 cm2 V-1 s-1 for micron-sized clusters and 0.23 eV, 470 cm2 V-1 s-1 for nano-sized clusters, respectively, indicating that the diamond film structure fabricated in this work is effective for the improvement of the p-type performance for the B-doped CVD diamond.

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

Scanning tunnelling microscope imaging of nanoscale electron density gradients on the surface of GaAs

International Nuclear Information System (INIS)

Hamilton, B; Jacobs, J; Missous, M

2003-01-01

This paper is concerned with the scanning tunnelling microscope tunnelling conditions needed to produce constant current images dominated either by surface topology or by electronic effects. A model experimental structure was produced by cleaving a GaAs multiδ-doped layer in UHV and so projecting a spatially varying electron gas density onto the (110) surface. This cross sectional electron density varies on a nanometre scale in the [100] growth direction. The electronic structure and tunnelling properties of this system were modelled, and the tunnelling conditions favouring sensitivity to the surface electron gas density determined

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

International Nuclear Information System (INIS)

Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

2005-01-01

A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

Lignocellulose-derived porous phosphorus-doped carbon as advanced electrode for supercapacitors

Science.gov (United States)

Yi, Jianan; Qing, Yan; Wu, ChuTian; Zeng, Yinxiang; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

2017-05-01

Engineering porous heteroatom-doped carbon nanomaterials with remarkable capacitive performance is highly attractive. Herein, a simple and smart method has been developed to synthesize phosphorus (P) doped carbon with hierarchical porous structure derived from lignocellulose. Hierarchically porous P doped carbon is readily obtained by the pyrolysis of lignocellulose immersed in ZnCl2/NaH2PO4 aqueous solution, and exhibits excellent capacitive properties. The as-obtained P doped porous carbon delivers a significant capacitance of 133 F g-1 (146 mF cm-2) at a high current density of 10 A g-1 with outstanding rate performance. Furthermore, the P doped carbon electrode yields a long-term cycling durability with more than 97.9% capacitance retention after 10000 cycles as well. A symmetric supercapacitor with a maximum energy density of 4.7 Wh kg-1 is also demonstrated based on these P doped carbon electrodes.

Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

DEFF Research Database (Denmark)

Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

1974-01-01

Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE

International Nuclear Information System (INIS)

Sasaki, Takuo; Takahasi, Masamitu; Norman, Andrew G.; Romero, Manuel J.; Al-Jassim, Mowafak M.; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2013-01-01

Defect characterization in molecular beam epitaxial (MBE) compositionally-graded In x Ga 1-x As layers on GaAs substrates consisting different thickness of overshooting (OS) layers was carried out using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the thickness of the OS layer influences not only stress but also lattice defects generated in a top InGaAs layer. While the top InGaAs layer with a thin OS layer is under compression and has mainly threading dislocations, the top layer with a thick OS layer is under tension and exhibits inhomogeneous strain associating with phase separation. We will discuss the mechanisms of defect generation and their in-plane distribution based on strain relaxation at the top and OS layers. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Sub-ambient carbon dioxide adsorption properties of nitrogen doped graphene

Energy Technology Data Exchange (ETDEWEB)

Tamilarasan, P.; Ramaprabhu, Sundara, E-mail: ramp@iitm.ac.in [Alternative Energy and Nanotechnology Laboratory (AENL), Nano Functional Materials Technology Centre (NFMTC), Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

2015-04-14

Carbon dioxide adsorption on carbon surface can be enhanced by doping the surface with heterogeneous atoms, which can increase local surface affinity. This study presents the carbon dioxide adsorption properties of nitrogen doped graphene at low pressures (<100 kPa). Graphene was exposed to nitrogen plasma, which dopes nitrogen atoms into carbon hexagonal lattice, mainly in pyridinic and pyrrolic forms. It is found that nitrogen doping significantly improves the CO{sub 2} adsorption capacity at all temperatures, due to the enrichment of local Lewis basic sites. In general, isotherm and thermodynamic parameters suggest that doped nitrogen sites have nearly same adsorption energy of surface defects and residual functional groups. The isosteric heat of adsorption remains in physisorption range, which falls with surface coverage, suggesting the distribution of magnitude of adsorption energy. The absolute values of isosteric heat and entropy of adsorption are slightly increased upon nitrogen doping.

Lateral n-p-n bipolar transistors by ion implantation into semi-insulating GaAs

International Nuclear Information System (INIS)

Canfield, P.; Forbes, L.

1988-01-01

GaAs bipolar transistors have not seen the major development effort that GaAs MESFETs have due primarily to the short minority carrier lifetimes in GaAs. The short minority carrier lifetimes require that the base region be very thin which, if done by implantation, requires that the doping be high to obtain a well defined base profile. These requirements are very difficult to achieve in GaAs and typically, if high current gain and high speed are desired for a bipolar technology, then heterostructure bipolars are the appropriate technology, although the cost of heterostructure devices will be prohibitive for some time to come. For applications requiring low current gain, more modest fabrication rules can be followed. Lateral bipolars are particularly attractive since they would be easier to fabricate than a planar bipolar or a heterojunction bipolar. Lateral bipolars do not require steps or deep contacts to make contact with the subcollector or highly doped very thin epilayers for the base region and they can draw upon the semi-insulating properties of the GaAs substrates for device isolation. Bipolar transistors are described and shown to work successfully. (author)

Oxidative Treatment to Improve Coating and Electrochemical Stability of Carbon Fiber Paper with Niobium Doped Titanium Dioxide Sols for Potential Applications in Fuel Cells

International Nuclear Information System (INIS)

Alvar, Esmaeil Navaei; Zhou, Biao; Eichhorn, S. Holger

2014-01-01

Highlights: • Solution coating of metal oxide layer directly onto carbon paper. • Most uniform Metal oxide coating on functionalized carbon paper. • Highest electrochemical stability for metal oxide coated functionalized carbon paper. - Abstract: Regular hydrophobized carbon paper cannot be used for unitized regenerative fuel cell applications as it corrodes at high potentials on the oxygen electrode side. Reported here are the oxidative treatment and dip-coating of carbon paper (Spectracarb™ 2050A-0850) with Nb-doped TiO 2 sols (anatase phase) to increase the corrosion resistance of the carbon paper at the interface between catalyst layer and gas diffusion backing layer. Coating of carbon paper with Nb-doped TiO 2 sols generates a reasonably uniform layer of TiO 2 and covers the individual carbon fibers well only if the carbon paper is oxidatively functionalized prior to coating. This can be reasoned with a better wetting of the functionalized carbon paper by the sol-gel and the formation of covalent bonds between Ti and the large number of functional groups on the surface of oxidized carbon paper, which is in good agreement with previous observation for carbon nanotubes. The resistance towards oxidation of coated and uncoated samples of untreated and functionalized carbon paper was probed by cyclic voltammetry in 0.5 M aqueous H 2 SO 4 at 1.2 V versus Ag/AgCl for up to 72 hours to mimic the conditions in a unitized regenerative fuel cell. Among these four cases studied here, functionalized carbon paper coated with a layer of Nb-doped TiO 2 shows the highest stability towards electrochemical oxidation while uncoated functionalized carbon paper is the least stable due to the large number of available oxidation sites. These results clearly demonstrate that a coating of carbon fibers with TiO 2 generates a lasting protection against oxidation under conditions encountered at the oxygen electrode side of unitized regenerative fuel cells

Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

Energy Technology Data Exchange (ETDEWEB)

Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

1990-08-10

Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

Porous Hierarchical Nitrogen-doped Carbon Coated ZnFe_2O_4 Composites as High Performance Anode Materials for Lithium Ion Batteries

International Nuclear Information System (INIS)

Yue, Hongyun; Wang, Qiuxian; Shi, Zhenpu; Ma, Chao; Ding, Yanmin; Huo, Ningning; Zhang, Jun; Yang, Shuting

2015-01-01

Porous hierarchical and nitrogen-doped carbon coated ZnFe_2O_4 (ZnFe_2O_4@NC) was obtained by combustion method and unique carbon coating technology. Gum Arabic was firstly introduced in the carbon coating process as an additive, which played an important role to control the uniformity of carbon coating layer. The nitrogen-doped carbon layer was obtained through the pyrolysis of glycine. The elemental composition and content of the nitrogen-doped carbon in composites were characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS) and thermal gravimetric analysis (TGA). The galvanostatic charge/discharge cycling was used to test the electrochemical performance of ZnFe_2O_4@NC and pure ZnFe_2O_4. The sub-micro size ZnFe_2O_4@NC with unique porous structure showed an excellent electrochemical performance as an anode material, which was higher than that of pure ZnFe_2O_4. ZnFe_2O_4@NC could maintain the specific discharge capacity of 1477 mAh g"−"1 at 0.1 A g"−"1 after 100 cycles and 705 mAh g"−"1 at 1 A g"−"1 after 1000 cycles, respectively.

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

Subnanosecond linear GaAs photoconductive switching: Revision 1

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

1989-01-01

We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

2011-01-01

Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

Energy Technology Data Exchange (ETDEWEB)

Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

2016-12-01

We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

Self-assembly of alkanethiolates directs sulfur bonding with GaAs(100)

Energy Technology Data Exchange (ETDEWEB)

Mancheno-Posso, Pablo; Muscat, Anthony J., E-mail: muscat@email.arizona.edu

2017-03-01

Highlights: • Alkanethiolate monolayers were formed on GaAs(100) using a 20 min liquid immersion. • The longest chain containing 20 CH{sub 2} groups protected the surface for 30 min from reoxidation. • A reaction-diffusion model shows that oxygen diffusion through the carbon chains is fast. • Alkanethiolates protect the surface by reducing the reaction rate of oxygen with the surface. • Assembly of the alkane chains directs sulfur atoms to bond to the surface. - Abstract: Molecules that contain linear alkane chains self-assemble on a variety of surfaces changing the degree of wetting, lubricity, and reactivity. We report on the reoxidation of GaAs(100) in air after adsorbing five alkanethiols (C{sub n}H{sub 2n+1}-SH where n = 3, 6, 12, 18, 20) and one alkanedithiol (HS-(CH{sub 2}){sub 8}-SH) deposited from the liquid phase. The alignment of the alkane chains forms a self-assembled layer, however, air diffuses readily through the carbon layer and reaches the surface. The impact of alignment is to improve the bonding of sulfur with the surface atoms which reduces the oxidation rate based on fitting the data to a reaction-diffusion model. The layer thickness and molecular density scale linearly with the number of carbon atoms in the alkane chain. The thickness of the alkanethiolate (RS{sup −}) layer grows by 0.87 ± 0.06 Å for each C atom in the chain and the surface density by 0.13 ± 0.03 molecule per nm{sup 2} per C atom up to a coverage of 5.0 molecules/nm{sup 2} for n = 20 or 0.8 monolayer. The surface coverage increases with length because interactions between methylene (CH{sub 2}) groups in neighboring chains reduce the tilt angle of the molecules with the surface normal. The tight packing yields areas per alkanethiolate as low as 20 Å{sup 2} for n = 20. The amount of C in the layer divided by the chain length is approximately constant up to n = 12 but increases sharply by a factor of 2–4× for n = 18 and 20 based on the C 1s X

Metal-doped single-walled carbon nanotubes and production thereof

Science.gov (United States)

Dillon, Anne C.; Heben, Michael J.; Gennett, Thomas; Parilla, Philip A.

2007-01-09

Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

International Nuclear Information System (INIS)

Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

2016-01-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

Voltammetric Determination of Acetaminophen in the Presence of Codeine and Ascorbic Acid at Layer-by-Layer MWCNT/Hydroquinone Sulfonic Acid-Overoxidized Polypyrrole Modified Glassy Carbon Electrode

OpenAIRE

Shahrokhian, Saeed; Saberi, Reyhaneh-Sadat

2011-01-01

A very sensitive electrochemical sensor constructed of a glassy carbon electrode modified with a layer-by-layer MWCNT/doped-overoxidized polypyrrole (oppy/MWCNT /GCE) was used for the determination of acetaminophen (AC) in the presence of codeine and ascorbic acid (AA). In comparison to the bare glassy carbon electrode, a considerable shift in the peak potential together with an increase in the peak current was observed for AC on the surface of oppy/MWCNT/GCE, which can be related to the enla...

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

International Nuclear Information System (INIS)

Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

2006-01-01

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

Selenium passivation of GaAs(001): a combined experimental and theoretical study

International Nuclear Information System (INIS)

Gonzalez, C; Benito, I; Ortega, J; Jurczyszyn, L; Blanco, J M; Perez, R; Flores, F; Kampen, T U; Zahn, D R T; Braun, W

2004-01-01

The chemical and electronic properties of selenium passivated GaAs(001)-2 x 1 surfaces were investigated by a combination of theoretical calculations and core level photoemission experiments. An anion exchange results in gallium-selenide like layers showing a 2 x 1 reconstruction in low energy electron diffraction (LEED). The analysis of the different components in the core level spectra of As 3d, Ga 3d and Se 3d limits the number of possible structural models. The Se/GaAs(001)-2 x 1 reconstruction has been also analysed by means of DFT-LDA calculations and theoretical STM currents. In a first step, different geometries are considered and the most stable one, from the point of view of the thermodynamic potential, is determined. Then, STM currents and the corresponding surface corrugation are calculated and compared with the experimental evidence. We conclude that the Se/GaAs(001)-2 x 1 reconstruction has a single Se atom in the last crystal layer, bonded to two Ga atoms of the second layer, and another Se layer replacing the third As layer of the crystal. These surfaces may be considered as chemically stable because they withstand considerable exposure to air. In terms of electronic passivation, i.e. the removal of any surface band bending, the selenium modification is not successful. Band bending on n-type doped samples is reduced while band bending on the p-type doped samples is further increased

Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

Energy Technology Data Exchange (ETDEWEB)

Mofor, A.C.; El-Shaer, A.; Schlenker, E.; Bakin, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Reuss, F.; Kling, R.; Schoch, W.; Limmer, W. [University Ulm, Department of Semiconductor Physics, Ulm (Germany); Ahlers, H.; Siegner, U.; Sievers, S.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Eisenmenger, J.; Mueller, T.; Ziemann, P. [University Ulm, Department of Solid State Physics, Ulm (Germany); Huebel, A.; Denninger, G. [Universitaet Stuttgart, 2. Physkalisches Institut, Stuttgart (Germany)

2007-07-15

Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al{sub 2}O{sub 3} substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. (orig.)

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

International Nuclear Information System (INIS)

Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

2016-01-01

Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C 2 H 2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C 2 H 2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C 2 H 2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C 2 H 2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus

Pure and carbon-doped boron phosphide (6,0) zigzag nanotube: A computational NMR study

Energy Technology Data Exchange (ETDEWEB)

Arshadi, S., E-mail: sattar_arshadi@yahoo.com [Department of Chemistry, Payame Noor University, 19395-4697, I.R. of Iran (Iran, Islamic Republic of); Bekhradnia, A.R., E-mail: abekhradnia@gmail.com [Pharmaceutical Sciences Research Center, Department of Medicinal Chemistry, Mazandaran University of Medical Sciences, Sari (Iran, Islamic Republic of); Department of Chemistry and Molecular Biology, Gothenburg University, Gothenburg (Sweden); Alipour, F.; Abedini, S. [Department of Chemistry, Payame Noor University, 19395-4697, I.R. of Iran (Iran, Islamic Republic of)

2015-11-15

Calculations were performed for investigation of the properties of the electronic structure of Carbon- Doped Boron Phosphide Nanotube (CDBPNT). Pristine and three models of C-doped structures of (6,0) zigzag BPNT were studied at density functional theory (DFT) in combination with 6-311G* basis set using Gaussian package of program. The calculated parameters reveal that various {sup 11}B and {sup 31}P nuclei are divided into some layers with equivalent electrostatic properties. The electronic structure properties are highly influenced by replacement of {sup 11}B and {sup 31}P atoms by {sup 12}C atoms in pristine model. Furthermore, the HOMO−LUMO gap energy for suggested doped models (I), (II) and (III) were lower than pure BPNT pristine systems. The dipole moment values of models (II) and (III) were decreased to 1.788 and 1.789, respectively while the dipole moments of model (I) were enhanced to 4.373, in compare to pure pristine one (2.586). The magnitude of changes in Chemical Shielding (CS) tensor parameters revealed that the electron density at the site of {sup 31}P was higher than that at the site of {sup 11}B due to carbon doping.

Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

Energy Technology Data Exchange (ETDEWEB)

Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

2012-10-15

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Spatial modulation of the Fermi level by coherent illumination of undoped GaAs

Science.gov (United States)

Nolte, D. D.; Olson, D. H.; Glass, A. M.

1989-11-01

The Fermi level in undoped GaAs has been modulated spatially by optically quenching EL2 defects. The spatial gradient of the Fermi level produces internal electric fields that are much larger than fields generated by thermal diffusion alone. The resulting band structure is equivalent to a periodic modulation-doped p-i-p structure of alternating insulating and p-type layers. The internal fields are detected via the electro-optic effect by the diffraction of a probe laser in a four-wave mixing geometry. The direct control of the Fermi level distinguishes this phenomenon from normal photorefractive behavior and introduces a novel nonlinear optical process.

Highly-crystalline ultrathin gadolinium doped and carbon-coated Li4Ti5O12 nanosheets for enhanced lithium storage

Science.gov (United States)

Xu, G. B.; Yang, L. W.; Wei, X. L.; Ding, J. W.; Zhong, J. X.; Chu, P. K.

2015-11-01

Highly-crystalline gadolinium doped and carbon-coated ultrathin Li4Ti5O12 (LTO) nanosheets (denoted as LTO-Gd-C) as an anode material for Li-ion batteries (LIBs) are synthesized on large scale by controlling the amount of carbon precursor in the topotactic transformation of layered ultrathin Li1.81H0.19Ti2O5·xH2O (H-LTO) nanosheets at 700 °C. The characterizations of structure and morphology reveal that the gadolinium doped and carbon-coated ultrathin LTO nanosheets have high crystallinity with a thickness of about 10 nm. Gadolinium doping allows the spinel LTO products to be stabilized, thereby preserving the precursor's sheet morphology and single crystal structure. Carbon encapsulation serves dual functions by restraining crystal growth of the LTO primary nanoparticles in the LTO-Gd-C nanosheets and decreasing the external electron transport resistance. Owing to the synergistic effects rendered by ultrathin nanosheets with high crystallinity, gadolinium doping and carbon coating, the developed ultrathin LTO nanosheets possess excellent specific capacity, cycling performance, and rate capability compared with reference materials, when evaluated as an anode material for lithium ion batteries (LIBs). The simple and effective strategy encompassing nanoscale morphological engineering, surface modification, and doping improves the performance of LTO-based anode materials for high energy density and high power LIBs applied in large scale energy storage.

Doped-carbon composites, synthesizing methods and applications of the same

Science.gov (United States)

Viswanathan, Tito

2017-05-09

A method of synthesizing a doped carbon composite includes preparing a solution having a carbon source material and a heteroatom containing additive, evaporating the solution to yield a plurality of powders, and subjecting the plurality of powders to a heat treatment for a duration of time effective to produce the doped carbon composite.

Peeled film GaAs solar cell development

International Nuclear Information System (INIS)

Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

1990-01-01

Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

NARCIS (Netherlands)

Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

2017-01-01

In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

Metallization systems for stable ohmic contacts to GaAs

International Nuclear Information System (INIS)

Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

1986-01-01

A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

Front and back side SIMS analysis of boron-doped delta-layer in diamond

Energy Technology Data Exchange (ETDEWEB)

Pinault-Thaury, M.-A., E-mail: marie-amandine.pinault-thaury@uvsq.fr [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Jomard, F. [Groupe d’Etude de la Matière Condensée, CNRS, University of Paris Saclay, University of Versailles St Quentin, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Mer-Calfati, C.; Tranchant, N.; Pomorski, M.; Bergonzo, P.; Arnault, J.-C. [CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)

2017-07-15

Highlights: • Front and back side SIMS analysis of delta-layer boron-doped is a first for diamond. • Combination of front and back side depth profiling improves delta-layer analyses. • Sharp interfaces are evidenced on both sides of the delta-layer boron-doped diamond. • The growth of delta-layer boron doped diamond is now well controlled. - Abstract: Nowadays the availability of very thin diamond layers in the range of nanometers as well as the possibility to characterize such delta-layer structures are required for the field of photonics and spintronics, but also for the development of next generation high power devices involving boron doping. The fabrication of diamond structures with abrupt interfaces such as superlattices and quantum wells has been recently improved. A very accurate characterization is then essential even though the analysis of such structures is arduous and challenging. SIMS analyses are commonly used to obtain depth profiles of dopants. However, below 10 nm in thickness, SIMS induced ion mixing effects which are no longer negligible. Then the raw SIMS profile might differ from the real dopant profile. In this study, we have analyzed a diamond structure containing a thin boron epilayer, especially synthesized to achieve SIMS analysis on both sides and to overcome the effects of ion mixing. We evidence the ion mixing induced by primary ions. Such a structure is a delta diamond layer, comparable to classical boron-doped delta-layer in silicon. Our results show that the growth of boron-doped delta-layer in diamond is now well controlled in terms of thickness and interfaces.

Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

Energy Technology Data Exchange (ETDEWEB)

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

2001-07-01

This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

Shallow doping of gallium arsenide by recoil implantation

International Nuclear Information System (INIS)

Sadana, D.K.; Souza, J.P. de; Rutz, R.F.; Cardone, F.; Norcott, M.H.

1989-01-01

Si atoms were recoil-implanted into GaAs by bombarding neutral (As + ) or dopant (Si + ) ions through a thin Si cap. The bombarded samples were subsequently rapid thermally or furnace annealed at 815-1000 degree C in Ar or arsine ambient. The presence of the recoiled Si in GaAs and resulting n + -doping was confirmed by secondary ion mass spectrometry and Hall measurements. It was found that sheet resistance of 19 cm 3 and the annealing temperature was > 850 degree C. The present electrical data show that the recoil implant method is a viable alternative to direct shallow implant for n + doping of GaAs. 7 refs., 3 figs., 1 tab

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Science.gov (United States)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

Science.gov (United States)

Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

2017-11-01

In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

Transition layers formation on the boundaries carbon fiber-copper dependence on the active additions

International Nuclear Information System (INIS)

Wlosinski, W.; Pietrzak, K.

1993-01-01

The basic problem connected with fabrication of carbon fiber-copper composites is to overcome the problem of low wettability of carbon fiber by copper. One of the possible solutions of that problem is to use the copper doped with active metals. The investigation results of transition layer forming on the phase boundary in the system have been discussed in respect of the kind and content of active elements added to the copper. 5 refs, 5 figs, 5 tabs

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

International Nuclear Information System (INIS)

Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

2014-01-01

A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

International Nuclear Information System (INIS)

Wang, Xiaoping; Wang, Jinye; Wang, Lijun

2016-01-01

A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

Science.gov (United States)

Singh, Prabhakar; Ruka, Roswell J.

1995-01-01

A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

CERN Document Server

Pereira, LMC; Correia, JG; Decoster, S; da Silva, MR; Araújo, JP; Vantomme, A

2011-01-01

We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga$_{1−x}$Mn$_{x}$As.

Nitrogen-doped mesoporous carbons for high performance supercapacitors

Science.gov (United States)

Wu, Kai; Liu, Qiming

2016-08-01

The mesoporous carbons have been synthesized by using α-D(+)-Glucose, D-Glucosamine hydrochloride or their mixture as carbon precursors and mesoporous silicas (SBA-15 or MCF) as hard templates. The as-prepared products show a large pore volume (0.59-0.97 cm3 g-1), high surface areas (352.72-1152.67 m2 g-1) and rational nitrogen content (ca. 2.5-3.9 wt.%). The results of electrochemical tests demonstrate that both heteroatom doping and suitable pore structure play a decisive role in the performance of supercapacitors. The representative sample of SBA-15 replica obtained using D-Glucosamine hydrochloride only exhibits high specific capacitance (212.8 F g-1 at 0.5 A g-1) and good cycle durability (86.1% of the initial capacitance after 2000 cycles) in 6 M KOH aqueous electrolyte, which is attributed to the contribution of double layer capacitance and pseudo-capacitance. The excellent electrochemical performance makes it a promising electrode material for supercapacitors.

Nitrogen and phosphorus co-doped carbon hollow spheres derived from polypyrrole for high-performance supercapacitor electrodes

Science.gov (United States)

Lv, Bingjie; Li, Peipei; Liu, Yan; Lin, Shanshan; Gao, Bifen; Lin, Bizhou

2018-04-01

Nitrogen and phosphorus co-doped carbon hollow spheres (NPCHSs) have been prepared by a carbonization and subsequent chemical activation route using dehydrated polypyrrole hollow spheres as the precursor and KOH as the activating agent. NPCHSs are interconnected into a unique 3D porous network, which endows the as-prepared carbon to exhibit a large specific surface area of 1155 m2 g-1 and a high specific capacitance of 232 F g-1 at a current density of 1 A g-1. The as-obtained NPCHSs present a high-level heteroatom doping with N, O and P contents of 11.4, 6.7 and 3.5 wt%, respectively. The capacitance of NPCHSs has been retained at 89.1% after 5000 charge-discharge cycles at a relatively high current density of 5 A g-1. Such excellent performance suggests that NPCHSs are attractive electrode candidates for electrical double layer capacitors.

Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

Energy Technology Data Exchange (ETDEWEB)

Dai, Wei, E-mail: popdw@126.com [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Jingmao; Geng, Dongsen [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Guo, Peng [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zheng, Jun [Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Qimin, E-mail: qmwang@gdut.edu.cn [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

2016-12-01

Highlights: • Diamond-like carbon films with Al and Cr doping were deposited. • Alternate multilayered structure consisted of Al-poor layer and Al-rich layer was formed. • The periodic Al-rich layers can greatly improve the residual stress and elastic resilience of the films. - Abstract: DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C{sub 2}H{sub 2} and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C{sub 2}H{sub 2} fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C{sub 2}H{sub 2} fraction. The results show that the Al and Cr contents in the films increased continuously as the C{sub 2}H{sub 2} fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would

Depth profiling of fluorine-doped diamond-like carbon (F-DLC) film: Localized fluorine in the top-most thin layer can enhance the non-thrombogenic properties of F-DLC

Energy Technology Data Exchange (ETDEWEB)

Hasebe, Terumitsu [Center for Science of Environment, Resources and Energy, Keio University Faculty of Science and Technology, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Department of Radiology, Tachikawa Hospital, 4-2-22, Nishiki-cho, Tachikawa, Tokyo 190-8531 (Japan)], E-mail: teru_hasebe@hotmail.com; Nagashima, So [Center for Science of Environment, Resources and Energy, Keio University Faculty of Science and Technology, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Kamijo, Aki [Department of Transfusion Medicine, the University of Tokyo Hospital, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8655 (Japan); Yoshimura, Taichi; Ishimaru, Tetsuya; Yoshimoto, Yukihiro; Yohena, Satoshi; Kodama, Hideyuki; Hotta, Atsushi [Center for Science of Environment, Resources and Energy, Keio University Faculty of Science and Technology, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Takahashi, Koki [Department of Transfusion Medicine, the University of Tokyo Hospital, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8655 (Japan); Suzuki, Tetsuya [Center for Science of Environment, Resources and Energy, Keio University Faculty of Science and Technology, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522 (Japan)

2007-12-03

Fluorine-doped diamond-like carbon (F-DLC) has recently drawn a great deal of attention as a more non-thrombogenic coating than conventional DLC for blood-contacting medical devices. We conducted quantitative depth profiling of F-DLC film by X-ray photoelectron spectroscopy (XPS) in order to elucidate the effects of fluorine and fluorine distribution in F-DLC film in connection with the prevention of surface blood adhesion. F-DLC films were prepared on silicon substrates using the radio frequency plasma enhanced chemical vapor deposition method, and the thickness of films was {approx} 50 nm. 50-nm-thick F-DLC film samples were etched at 10-nm thickness intervals using argon plasma, and each surface was examined by XPS. Thereafter, each etched film layer was incubated with platelet-rich plasma isolated from human whole blood, and the platelet-covered area per unit area was evaluated for each surface. XPS spectra showed the localization of doped fluorine in the top-most thin layer of the film. Platelet-covered areas represented progressively larger portions of the surfaces of deeper etched layers, corresponding to the decreasing fluorine content in such sample surfaces. These results indicate that the localized fluorine in the top-most thin layer is one of the key factors in the promotion of the non-thrombogenicity of F-DLC film.

The effect of alkaline doped catalysts on the CVD synthesis of carbon nanotubes

DEFF Research Database (Denmark)

Nemeth, Krisztian; Nemeth, Zoltan; Fejes, Dora

2011-01-01

The aim of this work was to develop new doped catalysts for chemical vapour deposition (CVD) synthesis in order to increase the quantity and quality of carbon nanotubes (CNTs). Doping compounds such as CsBr, CsCl, KBr and KCl were used to reach higher carbon deposit and carbon yield. The amount o...... of the dopant alkali compounds varied from 1 to 5%. As prepared CNTs were characterized by transmission electron microscopy (TEM), X‐ray diffraction (XRD) and Raman microscopy. Results revealed that both carbon yield and deposit could be increased over doped catalysts.......The aim of this work was to develop new doped catalysts for chemical vapour deposition (CVD) synthesis in order to increase the quantity and quality of carbon nanotubes (CNTs). Doping compounds such as CsBr, CsCl, KBr and KCl were used to reach higher carbon deposit and carbon yield. The amount...

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

2017-04-15

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

Enhancing substrate utilization and power production of a microbial fuel cell with nitrogen-doped carbon aerogel as cathode catalyst.

Science.gov (United States)

Tardy, Gábor Márk; Lóránt, Bálint; Lóka, Máté; Nagy, Balázs; László, Krisztina

2017-07-01

Catalytic efficiency of a nitrogen-doped, mesoporous carbon aerogel cathode catalyst was investigated in a two-chambered microbial fuel cell (MFC) applying graphite felt as base material for cathode and anode, utilizing peptone as carbon source. This mesoporous carbon aerogel containing catalyst layer on the cathode increased the maximum power density normalized to the anode volume to 2.7 times higher compared to the maximum power density obtained applying graphite felt cathode without the catalyst layer. At high (2 and 3) cathode/anode volume ratios, maximum power density exceeded 40 W m -3 . At the same time, current density and specific substrate utilization rate increased by 58% resulting in 31.9 A m -3 and 18.8 g COD m -3  h -1 , respectively (normalized to anode volume). Besides the increase of the power and the rate of biodegradation, the investigated catalyst decreased the internal resistance from the range of 450-600 to 350-370 Ω. Although Pt/C catalyst proved to be more efficient, a considerable decrease in the material costs might be achieved by substituting it with nitrogen-doped carbon aerogel in MFCs. Such cathode still displays enhanced catalytic effect.

Optimization of the doping profile of a MESFET, realized by ion implantation

International Nuclear Information System (INIS)

Cazaux, J.L.; Graffeuil, J.; Pavlidis, D.

1986-01-01

A method is proposed to investigate the influence of doping profiles on the performance of GaAs Field Effect Transistors. We consider in particular the effect of different ion implantation energies and doses, as well as, the influence of gate recess. The static and dynamic small signal characteristics of GaAs MESFETs with non-uniform doping profiles are studied by combining analytical and numerical techniques to reduce calculation time. Details of the FET analysis and computer simulation are presented. Results are compared with experimental data obtained from FETs with different implantation conditions and gate recess depths. The influence of the doping profile on the equivalent circuit elements of GaAs MESFETs is finally investigated in view of an optimization of their microwave properties [fr

Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires

Science.gov (United States)

Ghimpu, L.; Ursaki, V. V.; Pantazi, A.; Mesterca, R.; Brâncoveanu, O.; Shree, Sindu; Adelung, R.; Tiginyanu, I. M.; Enachescu, M.

2018-04-01

We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized by a flame-based thermal oxidation method. The produced structures were characterized by scanning electron microscopy (SEM), high-resolution scanning transmission electron microscope (HR-STEM), X-ray diffraction (XRD), Raman scattering and FTIR spectroscopy. It was found that the SnO2 core is of the rutile type, while the shells are composed of CdTe or GaAs nanocrystallites of zincblende structure with the dimensions of crystallites in the range of 10-20 nm. The Raman scattering investigations demonstrated that the quality of the porous nanostructured shell is improved by annealing at temperatures of 420-450 °C. The prospects of implementing these microstructures in intrinsic type fiber optic sensors are discussed.

Nitrogen-Doped Carbon Dots as A New Substrate for Sensitive Glucose Determination

Directory of Open Access Journals (Sweden)

Hanxu Ji

2016-05-01

Full Text Available Nitrogen-doped carbon dots are introduced as a novel substrate suitable for enzyme immobilization in electrochemical detection metods. Nitrogen-doped carbon dots are easily synthesised from polyacrylamide in just one step. With the help of the amino group on chitosan, glucose oxidase is immobilized on nitrogen-doped carbon dots-modified carbon glassy electrodes by amino-carboxyl reactions. The nitrogen-induced charge delocalization at nitrogen-doped carbon dots can enhance the electrocatalytic activity toward the reduction of O2. The specific amino-carboxyl reaction provides strong and stable immobilization of GOx on electrodes. The developed biosensor responds efficiently to the presence of glucose in serum samples over the concentration range from 1 to 12 mM with a detection limit of 0.25 mM. This novel biosensor has good reproducibility and stability, and is highly selective for glucose determination under physiological conditions. These results indicate that N-doped quantum dots represent a novel candidate material for the construction of electrochemical biosensors.

Nitrogen-doped hierarchical porous carbon materials prepared from meta-aminophenol formaldehyde resin for supercapacitor with high rate performance

International Nuclear Information System (INIS)

Zhou, Jin; Zhang, Zhongshen; Xing, Wei; Yu, Jing; Han, Guoxing; Si, Weijiang; Zhuo, Shuping

2015-01-01

Graphical abstract: N-doped hierarchical porous carbons with high rate capacitive performance are prepared by a combination method of nano-SiO 2 template/KOH activation. - Highlights: • A mass produced nano-SiO 2 is used to prepared hierarchical porous carbon. • N-doped hierarchical porous carbon materials are easily prepared. • The NHPCs materials exhibit a very high capacitance of up to 260.5 F g −1 . • The NHPC-800 sample shows very high rate capability. • Hierarchical porosity and N-doping synergistically enhances the whole capacitance. - Abstract: In this work, nitrogen-doped hierarchical porous carbon materials (NHPCs) are prepared by a two-step method combined of a hard template process and KOH-activation treatment. Low cost and large-scale commercial nano-SiO 2 are used as a hard template. The hierarchical porosity, structure and nitrogen-doped surface chemical properties are proved by a varies of means, such as scanning electron microscopy, transition electron microscopy, N 2 sorption, Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. When the prepared NHPCs materials are used as the electrode materials for supercapacitors in KOH electrolyte, they exhibit very high specific capacitance, good power capability and excellent cyclic stability. NHPC-800 carbon shows a high capacitance of 114.0 F g −1 at the current density of 40 A g −1 , responding to a high energy and power densities of 4.0 Wh kg −1 and 10 000 W kg −1 , and a very short drain time of 1.4 s. The excellent capacitive performance may be due to the synergistic effect of the hierarchical porosity, high effective surface area and heteroatom doping, resulting in both electrochemical double layer and Faradaic capacitance contributions

N-Doped Carbon Xerogels as Pt Support for the Electro-Reduction of Oxygen

Directory of Open Access Journals (Sweden)

Cinthia Alegre

2017-09-01

Full Text Available Durability and limited catalytic activity are key impediments to the commercialization of polymer electrolyte fuel cells. Carbon materials employed as catalyst support can be doped with different heteroatoms, like nitrogen, to improve both catalytic activity and durability. Carbon xerogels are nanoporous carbons that can be easily synthesized in order to obtain N-doped materials. In the present work, we introduced melamine as a carbon xerogel precursor together with resorcinol for an effective in-situ N doping (3–4 wt % N. Pt nanoparticles were supported on nitrogen-doped carbon xerogels and their activity for the oxygen reduction reaction (ORR was evaluated in acid media along with their stability. Results provide new evidences of the type of N groups aiding the activity of Pt for the ORR and of a remarkable stability for N-doped carbon-supported Pt catalysts, providing appropriate physico-chemical features.

Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

KAUST Repository

Mansour, Ahmed

2017-05-23

Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

KAUST Repository

Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

2017-01-01

Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

Highly stable carbon-doped Cu films on barrierless Si

International Nuclear Information System (INIS)

Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

2011-01-01

Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

Hydrogen storage capacity of lithium-doped KOH activated carbons

International Nuclear Information System (INIS)

Minoda, Ai; Oshima, Shinji; Iki, Hideshi; Akiba, Etsuo

2014-01-01

Highlights: • The hydrogen adsorption of lithium-doped KOH activated carbons has been studied. • Lithium doping improves their hydrogen adsorption affinity. • Lithium doping is more effective for materials with micropores of 0.8 nm or smaller. • Lithium reagent can alter the pore structure, depending on the raw material. • Optimizing the pore size and functional group is needed for better hydrogen uptake. - Abstract: The authors have studied the hydrogen adsorption performance of several types of lithium-doped KOH activated carbons. In the case of activated cokes, lithium doping improves their hydrogen adsorption affinity from 5.02 kg/m 3 to 5.86 kg/m 3 at 303 K. Hydrogen adsorption density increases by around 17% after lithium doping, likely due to the fact that lithium doping is more effective for materials with micropores of 0.8 nm or smaller. The effects of lithium on hydrogen storage capacity vary depending on the raw material, because the lithium reagent can react with the material and alter the pore structure, indicating that lithium doping has the effect of plugging or filling the micropores and changing the structures of functional groups, resulting in the formation of mesopores. Despite an observed decrease in hydrogen uptake, lithium doping was found to improve hydrogen adsorption affinity. Lithium doping increases hydrogen uptake by optimizing the pore size and functional group composition

Modeling and Design of Graphene GaAs Junction Solar Cell

Directory of Open Access Journals (Sweden)

Yawei Kuang

2015-01-01

Full Text Available Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

Layer-by-layer assembled heteroatom-doped graphene films with ultrahigh volumetric capacitance and rate capability for micro-supercapacitors.

Science.gov (United States)

Wu, Zhong-Shuai; Parvez, Khaled; Winter, Andreas; Vieker, Henning; Liu, Xianjie; Han, Sheng; Turchanin, Andrey; Feng, Xinliang; Müllen, Klaus

2014-07-09

Highly uniform, ultrathin, layer-by-layer heteroatom (N, B) co-doped graphene films are fabricated for high-performance on-chip planar micro-supercapacitors with an ultrahigh volumetric capacitance of ∼488 F cm(-3) and excellent rate capability due to the synergistic effect of nitrogen and boron co-doping. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Implantation annealing in GaAs by incoherent light

International Nuclear Information System (INIS)

Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

1983-01-01

Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

Pump-probe studies of travelling coherent longitudinal acoustic phonon oscillations in GaAs

Energy Technology Data Exchange (ETDEWEB)

Xu, Y.; Qi, J.; Tolk, Norman [Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235 (United States); Miller, J. [Naval air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Cho, Y.J.; Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Shahbazyan, T.V. [Department of Physics, Jackson State University, MS 39217 (United States)

2008-07-01

We report comprehensive studies of long-lived oscillations in femtosecond optical pump-probe measurements on GaAs based systems. The oscillations arise from a photo-generated coherent longitudinal acoustic phonon wave at the sample surface, which subsequently travels from the surface into the GaAs substrate, thus providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs. We also use the coherent longitudinal acoustic phonon waves to probe a thin buried Ga{sub 0.1}In{sub 0.9}As layers non-invasively. The observed phonon oscillations experience a reduction in amplitude and a phase change at wavelengths near the bandgap of the GaAs, when it passes through the thin Ga{sub x}In{sub 1-x}As layer. The layer depth and thicknesses can be extracted from the oscillation responses. A model has been developed that satisfactorily characterizes the experimental results. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Paths to light trapping in thin film GaAs solar cells.

Science.gov (United States)

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Biomass derived porous nitrogen doped carbon for electrochemical devices

Directory of Open Access Journals (Sweden)

Litao Yan

2017-04-01

Full Text Available Biomass derived porous nanostructured nitrogen doped carbon (PNC has been extensively investigated as the electrode material for electrochemical catalytic reactions and rechargeable batteries. Biomass with and without containing nitrogen could be designed and optimized to prepare PNC via hydrothermal carbonization, pyrolysis, and other methods. The presence of nitrogen in carbon can provide more active sites for ion absorption, improve the electronic conductivity, increase the bonding between carbon and sulfur, and enhance the electrochemical catalytic reaction. The synthetic methods of natural biomass derived PNC, heteroatomic co- or tri-doping into biomass derived carbon and the application of biomass derived PNC in rechargeable Li/Na batteries, high energy density Li–S batteries, supercapacitors, metal-air batteries and electrochemical catalytic reaction (oxygen reduction and evolution reactions, hydrogen evolution reaction are summarized and discussed in this review. Biomass derived PNCs deliver high performance electrochemical storage properties for rechargeable batteries/supercapacitors and superior electrochemical catalytic performance toward hydrogen evolution, oxygen reduction and evolution, as promising electrodes for electrochemical devices including battery technologies, fuel cell and electrolyzer. Keywords: Biomass, Nitrogen doped carbon, Batteries, Fuel cell, Electrolyzer

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

Science.gov (United States)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Nitrogen-doped porous carbon from Camellia oleifera shells with enhanced electrochemical performance

International Nuclear Information System (INIS)

Zhai, Yunbo; Xu, Bibo; Zhu, Yun; Qing, Renpeng; Peng, Chuan; Wang, Tengfei; Li, Caiting; Zeng, Guangming

2016-01-01

Nitrogen doped porous activated carbon was prepared by annealing treatment of Camellia oleifera shell activated carbon under NH 3 . We found that nitrogen content of activated carbon up to 10.43 at.% when annealed in NH 3 at 800 °C. At 600 °C or above, the N-doped carbon further reacts with NH 3 , leads to a low surface area down to 458 m 2 /g and low graphitization degree. X-ray photoelectron spectroscope (XPS) analysis indicated that the nitrogen functional groups on the nitrogen-doped activated carbons (NACs) were mostly in the form of pyridinic nitrogen. We discovered that the oxygen groups and carbon atoms at the defect and edge sites of graphene play an important role in the reaction, leading to nitrogen atoms incorporated into the lattice of carbon. When temperatures were lower than 600 °C the nitrogen atoms displaced oxygen groups and formed nitrogen function groups, and when temperatures were higher than 600 °C and ~ 4 at.% carbon atoms and part of oxygen function groups reacted with NH 3 . When compared to pure activated carbon, the nitrogen doped activated carbon shows nearly four times the capacitance (191 vs 51 F/g). - Highlights: • The nitrogen content up to 10.43 at % during CAC pyrolysis under NH3 at 800 °C. • The oxygen groups and carbon atoms played an important role in the nitrogen doping. • NAC-600 shows a much higher specific capacitance than CAC.

Hydrogen adsorption in microporous alkali-doped carbons (single-wall carbon nano-tubes and activated carbons)

International Nuclear Information System (INIS)

Laurent Duclaux; Szymon Los; Michel Letellier; Philippe Azais; Roland Pellenq; Thomas Roussel; Xavier Fuhr

2006-01-01

Doping of microporous carbon by Li or K leads to an increase in the energy of adsorption of H 2 or D 2 molecules. Thus, the room temperature sorption capacities (at P≤3 MPa) can be higher than the ones of the raw materials after slight doping. However, the maximum H 2 (or D 2 ) storage uptake measured at T≤ 77 K is lower than the one of pristine materials as the sites of adsorption are occupied by alkali ions inserted in the micropores. The microporous adsorption sites of doped single-walled carbon nano-tubes, identified by neutron diffraction, are both the interstitial voids (in electric-arc or HiPCO tubes) in between the tubes and the central canals of the tubes (only in HiPCO tubes). (authors)

Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun

2014-04-28

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

Energy Technology Data Exchange (ETDEWEB)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com [Young Researchers and Elite Club, Kermanshah Br anch, Islamic Azad University, P.O. Box: 6718997551, Kermanshah (Iran, Islamic Republic of); Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir [Physics Department, Faculty of Science, Kharazmi University, University Square, P.O. Box: 3197937551, Karaj (Iran, Islamic Republic of)

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

Dielectric functions, chemical and atomic compositions of the near surface layers of implanted GaAs by In+ ions

Science.gov (United States)

Kulik, M.; Kołodyńska, D.; Bayramov, A.; Drozdziel, A.; Olejniczak, A.; Żuk, J.

2018-06-01

The surfaces of (100) GaAs were irradiated with In+ ions. The implanted samples were isobaric annealed at 800 °C and then of dielectric function, the surface atomic concentrations of atoms and also the chemical composition of the near surface layers in these implanted semiconductor samples were obtained. The following investigation methods were used: spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry analyses (RBSA) and X-ray photoelectron spectroscopy (XPS) in the study of the above mentioned quantities, respectively. The change of the shape spectra of the dielectric functions at about 3.0 eV phonon energy, diffusion of In+ ions as well as chemical composition changes were observed after ion implantation and the thermal treatment. Due to displacement of Ga ions from GaAs by the In+ ions the new chemical compound InAs was formed. The relative amounts Ga2O3 and As2O3 ratio increase in the native oxide layers with the fluences increase after the thermal treatment of the samples. Additionally, it was noticed that the quantities of InO2 increase with the increasing values of the irradiated ions before thermal treatment.

Modeling of altered layer formation during reactive ion etching of GaAs

Energy Technology Data Exchange (ETDEWEB)

Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Rai, A., E-mail: Abha.Rai@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Angelin, E.J.; Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str.6, D-17489 Greifswald (Germany)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Experimental result showing the preferential sputtering of GaAs (150 keV Ar{sup +} and thermal O on GaAs) during reactive ion beam etching (RIBE) has been reported. Black-Right-Pointing-Pointer A model based on binary collisions (SDTrimSP) is presented to simulate RIBE. Black-Right-Pointing-Pointer The model is used to explain the reported experimental data and also the results by Grigonis and co-workers [1]. - Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam etching (RIBE) of GaAs in the presence of energetic Ar ions and thermal O atoms. It includes the collisional effects, diffusive processes and chemical reactions taking place in the system. The model parameters are fitted using the experimental observations of Grigonis and co-workers [1] and validated with the experimental results obtained during the GaAs ion etching presented in this paper. A detailed analysis is presented to understand the effect of the diffusive processes and the role of O during RIBE of GaAs. It is shown how the presence of damage caused by the energetic Ar coupled with the presence of thermal O opens up chemical reaction channels which eventually leads to the preferential sputtering of Ga observed at the ion etching facility at University of Greifswald.

Nanostructured nitrogen-doped mesoporous carbon derived from polyacrylonitrile for advanced lithium sulfur batteries

Energy Technology Data Exchange (ETDEWEB)

Liu, Ying; Zhao, Xiaohui; Chauhan, Ghanshyam S. [Department of Chemical Engineering and Research Institute for Green Energy Convergence Technology, Gyeongsang National University, 501 Jinju-daero, Jinju 660-701 (Korea, Republic of); Ahn, Jou-Hyeon, E-mail: jhahn@gnu.ac.kr [Department of Chemical Engineering and Research Institute for Green Energy Convergence Technology, Gyeongsang National University, 501 Jinju-daero, Jinju 660-701 (Korea, Republic of); Department of Materials Engineering and Convergence Technology and RIGET, Gyeongsang National University, 501 Jinju-daero, Jinju 660-701 (Korea, Republic of)

2016-09-01

Graphical abstract: Well-ordered nitrogen-doped mesoporous carbon materials were prepared by in-situ polymerization of polyacrylonitrile in SBA-15 template. The composite of sulfur and nitrogen-doped carbon was successfully used as a cathode material for lithium sulfur battery. - Highlights: • N-doped mesoporous carbons were prepared with PAN as carbon source. • Highly ordered pore system facilitates sulfur loading. • Ladder-type carbon matrix provides good structural stability for confining sulfur. • N-doping ensures an improved absorbability of soluble polysulfides. - Abstract: Nitrogen doping in carbon matrix can effectively improve the wettability of electrolyte and increase electric conductivity of carbon by ensuring fast transfer of ions. We synthesized a series of nitrogen-doped mesoporous carbons (CPANs) via in situ polymerization of polyacrylonitrile (PAN) in SBA-15 template followed by carbonization at different temperatures. Carbonization results in the formation of ladder structure which enhances the stability of the matrix. In this study, CPAN-800, carbon matrix synthesized by the carbonization at 800 °C, was found to possess many desirable properties such as high specific surface area and pore volume, moderate nitrogen content, and highly ordered mesoporous structure. Therefore, it was used to prepare S/CPAN-800 composite as cathode material in lithium sulfur (Li-S) batteries. The S/CPAN-800 composite was proved to be an excellent material for Li-S cells which delivered a high initial discharge capacity of 1585 mAh g{sup −1} and enhanced capacity retention of 862 mAh g{sup −1} at 0.1 C after 100 cycles.

Nitrogen-doped porous carbon derived from biomass waste for high-performance supercapacitor.

Science.gov (United States)

Ma, Guofu; Yang, Qian; Sun, Kanjun; Peng, Hui; Ran, Feitian; Zhao, Xiaolong; Lei, Ziqiang

2015-12-01

High capacitance property and low cost are the pivotal requirements for practical application of supercapacitor. In this paper, a low cost and high capacitance property nitrogen-doped porous carbon with high specific capacitance is prepared. The as-prepared nitrogen-doped porous carbon employing potato waste residue (PWR) as the carbon source, zinc chloride (ZnCl2) as the activating agent and melamine as nitrogen doping agent. The morphology and structure of the carbon materials are studied by scanning electron microscopy (SEM), N2 adsorption/desorption, X-ray diffraction (XRD) and Raman spectra. The surface area of the nitrogen-doped carbon which prepared under 700°C is found to be 1052m(2)/g, and the specific capacitance as high as 255Fg(-1) in 2M KOH electrolyte is obtained utilize the carbon as electrode materials. The electrode materials also show excellent cyclability with 93.7% coulombic efficiency at 5Ag(-1) current density of for 5000cycles. Copyright © 2015 Elsevier Ltd. All rights reserved.

Friction and wear behaviour of Mo-W doped carbon-based coating during boundary lubricated sliding

Science.gov (United States)

Hovsepian, Papken Eh.; Mandal, Paranjayee; Ehiasarian, Arutiun P.; Sáfrán, G.; Tietema, R.; Doerwald, D.

2016-03-01

A molybdenum and tungsten doped carbon-based coating (Mo-W-C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo-W-C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo-W-C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and 'in situ' formed metal sulphides (WS2 and MoS2, where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

Preparation of nitrogen-doped graphene/activated carbon composite papers to enhance energy storage in supercapacitors

Science.gov (United States)

Li, Yong-feng; Liu, Yan-zhen; Liang, Yu; Guo, Xiao-hui; Chen, Cheng-meng

2017-09-01

This report presents a facile and effective method to synthesize freestanding nitrogen-doped reduced graphene oxide (rGO)/activated carbon (AC) composite papers for supercapacitors by a method combining vacuum filtration with post-annealing in NH3 atmosphere. The effect of activated carbon contents on the microstructure and capacitive behavior of the resulting composite papers before and after the annealing was investigated by X-ray diffraction, scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy. Results show that the composite paper with a 30% activated carbon loading has a high nitrogen content of 14.6 at% and superior capacitive performance (308 F/g, 1 A/g) to the other composite papers with various activated carbon loadings. Nitrogen was doped and GO reduced during the annealing. The rGO nanosheets acted as a framework, and the AC particles served as spacers to avoid agglomeration of graphene sheets. The high capacitance of the composite paper is ascribed to the electric double-layer behavior and the reversible redox reactions of the nitrogen and oxygen groups. The entire process is simple, environmental friendly and easily scalable for mass production.

A doped activated carbon prepared from polyaniline for high performance supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Li, Limin; Liu, Enhui; Li, Jian; Yang, Yanjing; Shen, Haijie; Huang, Zhengzheng; Xiang, Xiaoxia; Li, Wen [Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Hunan 411105 (China)

2010-03-01

A novel doped activated carbon has been prepared from H{sub 2}SO{sub 4}-doped polyaniline which is prepared by the oxypolymerization of aniline. The morphology, surface chemical composition and surface area of the carbon have been investigated by scanning electron microscope, X-ray photoelectron spectroscopy and Brunaner-Emmett-Teller measurement, respectively. Electrochemical properties of the doped activated carbon have been studied by cyclic voltammograms, galvanostatic charge/discharge, and electrochemical impedance spectroscopy measurements in 6 mol l{sup -1} KOH. The specific capacitance of the carbon is as high as 235 F g{sup -1}, the specific capacitance hardly decreases at a high current density 11 A g{sup -1} after 10,000 cycles, which indicates that the carbon possesses excellent cycle durability and may be a promising candidate for supercapacitors. (author)

High microwave performance ion-implanted GaAs MESFETs on InP substrates

International Nuclear Information System (INIS)

Wada, M.; Kato, K.

1990-01-01

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaoqiang, E-mail: lxq_suse@sina.com [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China); Hao, Junying, E-mail: jyhao@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Xie, Yuntao [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China)

2016-08-30

Highlights: • Evolution of nanostructure and properties of the polymeric amorphous carbon films were firstly studied. • Si doping enhanced polymerization of the hydrocarbon chains and Al doping resulted in increase in the ordered carbon clusters of polymeric amorphous carbon films. • Soft polymeric amorphous carbon films exhibited an unconventional frictional behaviors with a superior wear resistance. • The mechanical and vacuum tribological properties of the polymeric amorphous carbon films were significantly improved by Si and Al co-doping. - Abstract: Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

Cathodoluminescence studies of anomalous ion implantation defect introduction in lightly and heavily doped liquid phase epitaxial GaAs:Sn

International Nuclear Information System (INIS)

Norris, C.B.; Barnes, C.E.

1980-01-01

The anomalous postrange defect introduction produced by shallow ion implantation in GaAs has been investigated in Sn-doped liquid phase epitaxial (LPE) material using depth-resolved cathodoluminescence in conjunction with layer removal by chemical etching. 100-keV Ne + or 200-keV Zn + ions were implanted into lightly or heavily Sn-doped LPE layers at temperatures between 80 and 300 K. All implantations were subsequently annealed at 300 K. Although the projected ion ranges for the implants were on the order of 1000 A, significant postrange damage was observed at far greater depths. At depths up to several microns, the damage introduction produced severe nonradiative recombination but simultaneously caused an apparent increase in the concentration of incumbent luminescence centers responsible for an extrinsic band near 1.39 eV. A weak damage-related band near 1.2 eV could also be seen in one instance. At depths of 5--30 μm, the postrange damage had the opposite effect of annihilating incumbent 1.39-eV luminescence centers. The efficiency of the damage introduction has a complicated temperature dependence which is significantly different for the ion/substrate combinations investigated. However, no conditions were found for which the damage introduction could be inhibited. While our measurements are the most extensive to date concerning the anomalous ion implant damage introduction in GaAs, the detailed mechanisms responsible for this effect still remain obscure owing in part to the limited understanding of defects in GaAs

Nitrogen-doped porous carbon from Camellia oleifera shells with enhanced electrochemical performance

Energy Technology Data Exchange (ETDEWEB)

Zhai, Yunbo, E-mail: ybzhai@hnu.edu.cn [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China); Xu, Bibo [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China); Zhu, Yun [Office of Scientific R& D, Hunan University, Changsha 410082 (China); Qing, Renpeng; Peng, Chuan; Wang, Tengfei; Li, Caiting; Zeng, Guangming [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082 (China)

2016-04-01

Nitrogen doped porous activated carbon was prepared by annealing treatment of Camellia oleifera shell activated carbon under NH{sub 3}. We found that nitrogen content of activated carbon up to 10.43 at.% when annealed in NH{sub 3} at 800 °C. At 600 °C or above, the N-doped carbon further reacts with NH{sub 3}, leads to a low surface area down to 458 m{sup 2}/g and low graphitization degree. X-ray photoelectron spectroscope (XPS) analysis indicated that the nitrogen functional groups on the nitrogen-doped activated carbons (NACs) were mostly in the form of pyridinic nitrogen. We discovered that the oxygen groups and carbon atoms at the defect and edge sites of graphene play an important role in the reaction, leading to nitrogen atoms incorporated into the lattice of carbon. When temperatures were lower than 600 °C the nitrogen atoms displaced oxygen groups and formed nitrogen function groups, and when temperatures were higher than 600 °C and ~ 4 at.% carbon atoms and part of oxygen function groups reacted with NH{sub 3}. When compared to pure activated carbon, the nitrogen doped activated carbon shows nearly four times the capacitance (191 vs 51 F/g). - Highlights: • The nitrogen content up to 10.43 at % during CAC pyrolysis under NH3 at 800 °C. • The oxygen groups and carbon atoms played an important role in the nitrogen doping. • NAC-600 shows a much higher specific capacitance than CAC.

Growth of thermal oxide layers on GaAs and InP in the presence of ammonium heptamolybdate

International Nuclear Information System (INIS)

Mittova, I.Ya.; Lavrushina, S.S.; Afonchikova, A.V.

2004-01-01

Processes of thermal oxidation of GaAs and InP in the presence of ammonium heptamolybdate were studied using the methods of X-ray fluorescence analysis and IR spectroscopy at temperatures 480-580 Deg C. It was ascertained that introduction of the activator into the system results in accelerated growth of layers on semiconductors due to participation of anionic component of the chemostimulator in oxidation processes. The activator is integrated into the salts formed [ru

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Science.gov (United States)

Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

2017-11-01

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

Co-modification of nitrogen-doped graphene and carbon on Li3V2(PO4)3 particles with excellent long-term and high-rate performance for lithium storage

Science.gov (United States)

Ren, Manman; Yang, Mingzhi; Liu, Weiliang; Li, Mei; Su, Liwei; Wu, Xianbin; Wang, Yuanhao

2016-09-01

In this work, N-doped graphene and carbon co-modified Li3V2(PO4)3 composites (LVP/NGC) are successfully fabricated through a xerogel method for the first time. The obtained architecture combines two types of electronic contact with Li3V2(PO4)3 particles: the point-to-face contact of N-doped graphene and the face-to-face contact of N-doped carbon coating layers. Profiting from the favorable complex structure, graphene and carbon coating layers offer an extraordinary network for electron transfer and hence an excellent long-term and high-rate performance. Even tested at the rate of 40 C, the reversible capacity still maintains 86.9 mAh g-1 after 800 cycles without any fading. This work provides a promising route to improve the long-term and high-rate performance of cathodes for LIBs and enlightens us on exploring preferable strategies to develop advanced electrode materials for other energy storage devices.

Hierarchically structured, nitrogen-doped carbon membranes

KAUST Repository

Wang, Hong; Wu, Tao

2017-01-01

The present invention is a structure, method of making and method of use for a novel macroscopic hierarchically structured, nitrogen-doped, nano-porous carbon membrane (HNDCMs) with asymmetric and hierarchical pore architecture that can be produced

Voc enhancement of a solar cell with doped Li+-PbS as the active layer

Science.gov (United States)

Chávez Portillo, M.; Alvarado Pulido, J.; Gallardo Hernández, S.; Soto Cruz, B. S.; Alcántara Iniesta, S.; Gutiérrez Pérez, R.; Portillo Moreno, O.

2018-06-01

In this report, we investigate the fabrication of solar cells obtained by chemical bath technique, based on CdS as window layer and PbS and PbS-Li+-doped as the active layer. We report open-circuit-voltage Voc values of ∼392 meV for PbS and ∼630 meV for PbSLi+-doped, a remarkable enhanced in the open circuit voltage is shown for solar cells with doped active layer. Li+ ion passivate the dangling bonds in PbS-metal layer interface in consequence reducing the recombination centers.

Structure and homoepitaxial growth of GaAs(6 3 1)

International Nuclear Information System (INIS)

Mendez-Garcia, V.H.; Ramirez-Arenas, F.J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J.S.; Lopez-Lopez, M.

2006-01-01

We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 deg. Creflection high-energy electron diffraction (RHEED) showed along the [-1 2 0] direction a 2x surface reconstruction for GaAs(6 3 1)A, and a 1x pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 deg. C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5-9-3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures

Ru-decorated Pt nanoparticles on N-doped multi-walled carbon nanotubes by atomic layer deposition for direct methanol fuel cells

DEFF Research Database (Denmark)

Johansson, Anne-Charlotte Elisabeth Birgitta; Yang, R.B.; Haugshøj, K.B.

2013-01-01

We present atomic layer deposition (ALD) as a new method for the preparation of highly dispersed Ru-decorated Pt nanoparticles for use as catalyst in direct methanol fuel cells (DMFCs). The nanoparticles were deposited onto N-doped multi-walled carbon nanotubes (MWCNTs) at 250 °C using trimethyl......(methylcyclopentadienyl)platinum MeCpPtMe3, bis(ethylcyclopentadienyl)ruthenium Ru(EtCp)2 and O2 as the precursors. Catalysts with 5, 10 and 20 ALD Ru cycles grown onto the CNT-supported ALD Pt nanoparticles (150 cycles) were prepared and tested towards the electro-oxidation of CO and methanol, using cyclic voltammetry...... and chronoamperometry in a three-electrode electrochemical set-up. The catalyst decorated with 5 ALD Ru cycles was of highest activity in both reactions, followed by the ones with 10 and 20 ALD Ru cycles. It is demonstrated that ALD is a promising technique in the field of catalysis as highly dispersed nanoparticles...

Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study

International Nuclear Information System (INIS)

Ouyang Fang-Ping; Peng Sheng-Lin; Chen Ling-Na; Sun Shu-Yuan; Xu Hui

2011-01-01

By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I—V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

International Nuclear Information System (INIS)

Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

2010-01-01

Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

CMOS compatible route for GaAs based large scale flexible and transparent electronics

KAUST Repository

Nour, Maha A.; Ghoneim, Mohamed T.; Droopad, Ravi; Hussain, Muhammad Mustafa

2014-01-01

Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

CMOS compatible route for GaAs based large scale flexible and transparent electronics

KAUST Repository

Nour, Maha A.

2014-08-01

Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

Study of the process of positron annihilation in GaAs disturbed surface layers

International Nuclear Information System (INIS)

Vorob'ev, A.A.; Aref'ev, K.P.; Vorob'ev, S.A.; Karetnikov, A.S.; Prokop'ev, E.P.; Kuznetsov, Yu.N.; Khashimov, F.R.; Markova, T.I.

1977-01-01

The effect was investigated of single-crystal semiconductor surface treatment types on positron annihilation characteristics. CaAs single-crystal specimens were investigated with the following surface treatment types: (a) polishing with Al 2 O 3 abrasive powder water suspension; (b) mechanical polishing with diamond paste; (c) mechanical chemical polishing with Al 2 O 3 or ZrO 2 suspensions; (d) chemical polishing with the 1HF:3HNO 3 :2H 2 O mixture. The investigation of annihilation was performed by the method of distinguishing the narrow component Isub(N) from correlation curves in 14.5 kOc statical magnetic field and by that of measuring the relative value of friquantuum annihilation Psub(3γ). The maximum Isub(N) and Psub(3γ) values are shown to occur in GaAs specimens with the (d) type of treatment. The experimental data provided a conclusion about the presence of a maximum thickness oxide layer of complex composition on the surface of the specimens compared with oxide layer thicknesses on the surface of specimens with (a), (b), and (c) treatmens. It is concluded that the positron annihilation method may be successfully used for the study of semiconductor material oxide layers

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

International Nuclear Information System (INIS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

2000-01-01

Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Directory of Open Access Journals (Sweden)

Wei Yuan Wong

2017-01-01

Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

Science.gov (United States)

Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

2017-11-01

Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

Enhanced oxidation resistance of carbon fiber reinforced lithium aluminosilicate composites by boron doping

International Nuclear Information System (INIS)

Xia, Long; Jin, Feng; Zhang, Tao; Hu, Xueting; Wu, Songsong; Wen, Guangwu

2015-01-01

Highlights: • C f /LAS composites exhibit enhanced oxidation resistance by boron doping. • Boron doping is beneficial to the improvement of graphitization degree of carbon fibers. • Graphitization of carbon fibers together with the decrease of viscosity of LAS matrix is responsible to the enhancement of oxidation resistance of C f /LAS composites. - Abstract: Carbon fiber reinforced lithium aluminosilicate matrix composites (C f /LAS) modified with boron doping were fabricated and oxidized for 1 h in static air. Weight loss, residual strength and microstructure were analyzed. The results indicate that boron doping has a remarkable effect on improving the oxidation resistance for C f /LAS. The synergism of low viscosity of LAS matrix at high temperature and formation of graphite crystals on the surface of carbon fibers, is responsible for excellent oxidation resistance of the boron doped C f /LAS.

Transition of Emission Colours as a Consequence of Heat-Treatment of Carbon Coated Ce3+-Doped YAG Phosphors

NARCIS (Netherlands)

Yin, L.J.; Dierre, B.F.P.R.; Sekiguchi, Takashi; van Ommen, J.R.; Hintzen, H.T.J.M.; Cho, Yujin

2017-01-01

To modify the luminescence properties of Ce³⁺-doped Y₃Al₅O₁₂ (YAG) phosphors, they have been coated with a carbon layer by chemical vapor deposition and subsequently heat-treated at high temperature under N₂ atmosphere. Luminescence of the

Microscopic unravelling of nano-carbon doping in MgB2 superconductors fabricated by diffusion method

International Nuclear Information System (INIS)

Wong, D.C.K.; Yeoh, W.K.; De Silva, K.S.B.; Kondyurin, A.; Bao, P.; Li, W.X.; Xu, X.; Peleckis, G.; Dou, S.X.; Ringer, S.P.; Zheng, R.K.

2015-01-01

Highlights: • First report on nano-carbon doped MgB 2 superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B 4 C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB 2 with 2.5% nano-carbon doped showed the highest J c , ≈10 4 A/cm 2 for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB 2 crystalline. The strain increased across the doping level due to the carbon substitution in the MgB 2 matrix. The broadening of the T c curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B 4 C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB 2 . Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J c of the 10% nano-carbon doped MgB 2 bulk superconductor

Structural and compositional evolution of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} film under different annealing conditions

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki-Hong; Kyoung, Yong-Koo; Yun, Dong-Jin [AS group, CAS center, SAIT, Samsung Electronics Co. Ltd., Yongin 446-712 (Korea, Republic of); Choi, Sang-Jun, E-mail: sangjun5545.choi@samsung.com [Device Architecture Lab, Semiconductor R and D center, Samsung Electronics Co. Ltd., Yongin 446-712 (Korea, Republic of)

2013-12-02

Changes in the microstructural and electrical properties of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} during thermal annealing under N{sub 2} and air atmospheres are investigated. The occurrence of compositional and structural changes was found to depend on the annealing conditions, and in particular, on the out-diffusion of germanium atoms. The thick oxidation layer generated during air annealing prevented germanium out-diffusion, leading to structural changes but no compositional changes. In contrast, germanium out-diffusion occurred during annealing under N{sub 2}, leading to compositional changes but preventing structural changes. - Highlights: • We investigate the stability of 10% carbon-doped Ge2Sb2Te5 alloys. • The compositional and structural changes depend on the annealing conditions. • Germanium out-diffusion occurs during N2 annealing, leading to compositional changes. • The oxidation layer generated during air annealing prevents germanium out-diffusion.

Carbonization-dependent nitrogen-doped hollow porous carbon nanospheres synthesis and electrochemical study for supercapacitors

Science.gov (United States)

Zhou, Lingyun; Xie, Guohong; Chen, Xiling

2018-05-01

In this paper, a nitrogen-doped hollow microporous carbon nanospheres was synthesized via the combination of hyper-crosslinking mediated self-assembly and further pyrolysis using polylactide-b-polystyrene (PLA-b-PS) copolymers and aniline monomers as precursor. The pore structure and the correlative electrochemical performance of nitrogen-doped hollow microporous carbon nanospheres were affected by the molar mass ratio of aniline and PS in block copolymers and the carbonization conditions. The electrochemical measurements results showed that the obtained PLA150-PS250-N4-900-10H sample with nitrogen content of 3.57% and the BET surface area of 945 m2 g-1 displays the best capacitance performance. At a current density of 1.0 Ag-1, the resultant specific capacitance is 250 Fg-1. In addition, it also exhibits high capacitance retention of 98% after charging-discharging 1500 times at 25 Ag-1. The results demonstrate the nitrogen-doped hollow microporous carbon nanospheres can be used as promising supercapacitor electrode materials for high performance energy storage devices.

The Synthesis of Nitrogen-Doped Multiwalled Carbon Nanotubes ...

African Journals Online (AJOL)

ACVDmethod was used to prepare high-quality nitrogen-doped multiwalled carbon nanotubes (N-MWCNTs) using acetonitrile as the nitrogen and carbon source and acetylene as a carbon source over an Fe-Co/CaCO3 catalyst in the temperature range 700–850 °C. This represents a continuation of earlier work in which ...

Nitrogen-Doped Carbon Nanotube and Graphene Materials for Oxygen Reduction Reactions

Directory of Open Access Journals (Sweden)

Qiliang Wei

2015-09-01

Full Text Available Nitrogen-doped carbon materials, including nitrogen-doped carbon nanotubes (NCNTs and nitrogen-doped graphene (NG, have attracted increasing attention for oxygen reduction reaction (ORR in metal-air batteries and fuel cell applications, due to their optimal properties including excellent electronic conductivity, 4e− transfer and superb mechanical properties. Here, the recent progress of NCNTs- and NG-based catalysts for ORR is reviewed. Firstly, the general preparation routes of these two N-doped carbon-allotropes are introduced briefly, and then a special emphasis is placed on the developments of both NCNTs and NG as promising metal-free catalysts and/or catalyst support materials for ORR. All these efficient ORR electrocatalysts feature a low cost, high durability and excellent performance, and are thus the key factors in accelerating the widespread commercialization of metal-air battery and fuel cell technologies.

Friction and wear behaviour of Mo–W doped carbon-based coating during boundary lubricated sliding

Energy Technology Data Exchange (ETDEWEB)

Hovsepian, Papken Eh., E-mail: p.hovsepian@shu.ac.uk [Nanotechnology Centre for PVD Research, HIPIMS Research Centre, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB (United Kingdom); Mandal, Paranjayee, E-mail: 200712mum@gmail.com [Nanotechnology Centre for PVD Research, HIPIMS Research Centre, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB (United Kingdom); Ehiasarian, Arutiun P., E-mail: a.ehiasarian@shu.ac.uk [Nanotechnology Centre for PVD Research, HIPIMS Research Centre, Sheffield Hallam University, City Campus, Howard Street, Sheffield S1 1WB (United Kingdom); Sáfrán, G., E-mail: safran.gyorgy@ttk.mta.hu [Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, H-1121 Budapest, Konkoly-Thegeut 29-33 (Hungary); Tietema, R., E-mail: rtietema@hauzer.nl [IHI Hauzer Techno Coating B.V., Van Heemskerckweg 22, 5928 LL Venlo (Netherlands); Doerwald, D., E-mail: ddoerwald@hauzer.nl [IHI Hauzer Techno Coating B.V., Van Heemskerckweg 22, 5928 LL Venlo (Netherlands)

2016-03-15

Graphical abstract: - Highlights: • Novel Mo–W–C coating provides extremely low friction (μ ∼ 0.03) in lubricated condition. • Mo–W–C outperforms existing DLCs in terms of low friction, independent of temperature. • Tribochemical reactions govern the wear mechanism of Mo–W–C coating. • The transfer layer contains graphitic carbon and ‘in situ’ formed WS{sub 2} and MoS{sub 2}. • WS{sub 2} and MoS{sub 2} are the key factors facilitating appreciably low friction and wear rate. - Abstract: A molybdenum and tungsten doped carbon-based coating (Mo–W–C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo–W–C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo–W–C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and ‘in situ’ formed metal sulphides (WS{sub 2} and MoS{sub 2}, where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

Friction and wear behaviour of Mo–W doped carbon-based coating during boundary lubricated sliding

International Nuclear Information System (INIS)

Hovsepian, Papken Eh.; Mandal, Paranjayee; Ehiasarian, Arutiun P.; Sáfrán, G.; Tietema, R.; Doerwald, D.

2016-01-01

Graphical abstract: - Highlights: • Novel Mo–W–C coating provides extremely low friction (μ ∼ 0.03) in lubricated condition. • Mo–W–C outperforms existing DLCs in terms of low friction, independent of temperature. • Tribochemical reactions govern the wear mechanism of Mo–W–C coating. • The transfer layer contains graphitic carbon and ‘in situ’ formed WS 2 and MoS 2 . • WS 2 and MoS 2 are the key factors facilitating appreciably low friction and wear rate. - Abstract: A molybdenum and tungsten doped carbon-based coating (Mo–W–C) was developed in order to provide low friction in boundary lubricated sliding condition at ambient and at high temperature. The Mo–W–C coating showed the lowest friction coefficient among a number of commercially available state-of-the-art DLC coatings at ambient temperature. At elevated temperature (200 °C), Mo–W–C coating showed a significant reduction in friction coefficient with sliding distance in contrast to DLC coatings. Raman spectroscopy revealed the importance of combined Mo and W doping for achieving low friction at both ambient and high temperature. The significant decrease in friction and wear rate was attributed to the presence of graphitic carbon debris (from coating) and ‘in situ’ formed metal sulphides (WS 2 and MoS 2 , where metals were supplied from coating and sulphur from engine oil) in the transfer layer.

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

Science.gov (United States)

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

International Nuclear Information System (INIS)

Paviet-Salomon, B.; Gall, S.; Slaoui, A.

2013-01-01

Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

GaAs low-energy X-ray radioluminescence nuclear battery

Science.gov (United States)

Zhang, Zheng-Rong; Liu, Yun-Peng; Tang, Xiao-Bin; Xu, Zhi-Heng; Yuan, Zi-Cheng; Liu, Kai; Chen, Wang

2018-01-01

The output properties of X-ray radioluminescence (RL) nuclear batteries with different phosphor layers were investigated by using low-energy X-ray. Results indicated that the values of electrical parameters increased as the X-ray energy increased, and the output power of nuclear battery with ZnS:Cu phosphor layer was greater than those of batteries with ZnS:Ag, (Zn,Cd)S:Cu or Y2O3:Eu phosphor layers under the same excitation conditions. To analyze the RL effects of the phosphor layers under X-ray excitation, we measured the RL spectra of the different phosphor layers. Their fluorescence emissions were absorbed by the GaAs device. In addition, considering luminescence utilization in batteries, we introduced an aluminum (Al) film between the X-ray emitter and phosphor layer. Al film is a high performance reflective material and can increase the fluorescence reaching the GaAs photovoltaic device. This approach significantly improved the output power of the battery.

Preparation and Electrochemical Properties of Silver Doped Hollow Carbon Nanofibers

Directory of Open Access Journals (Sweden)

LI Fu

2016-11-01

Full Text Available Silver doped PAN-based hollow carbon nanofibers were prepared combining co-electrospinning with in situ reduction technique subsequently heat treatment to improve the electrochemical performances of carbon based supercapacitor electrodes. The morphology, structure and electrochemical performances of the resulted nanofiber were studied. The results show that the silver nanoparticles can be doped on the surface of hollow carbon nanofibers and the addition of silver favors the improvement of the electrochemical performances, exhibiting the enhanced reversibility of electrode reaction and the capacitance and the reduced charge transfer impedance.

Spin Hall Effect in Doped Semiconductor Structures

Science.gov (United States)

Tse, Wang-Kong; Das Sarma, Sankar

2006-03-01

We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

Energy Technology Data Exchange (ETDEWEB)

Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

2012-03-30

Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

International Nuclear Information System (INIS)

Yamazaki, T.; Minakata, H.; Ito, T.

1990-01-01

The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

International Nuclear Information System (INIS)

Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

2014-01-01

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications

Science.gov (United States)

In Park, Suk; Trojak, Oliver Joe; Lee, Eunhye; Song, Jin Dong; Kyhm, Jihoon; Han, Ilki; Kim, Jongsu; Yi, Gyu-Chul; Sapienza, Luca

2018-05-01

We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

Photoelectrochemical properties of N-doped self-organized titania nanotube layers with different thicknesses

OpenAIRE

Macak, Jan M.; Ghicov, Andrei; Hahn, Robert; Tsuchiya, Hiroaki; Schmuki, Patrik

2013-01-01

The present work reports nitrogen doping of self-organized TiO2 nanotubular layers. Different thicknesses of the nanotubular layer architecture were formed by electrochemical anodization of Ti in different fluoride-containing electrolytes; tube lengths were 500 nm, 2.5 μm, and 6.1 μm. As-formed nanotube layers were annealed to an anatase structure and treated in ammonia environment at 550 °C to achieve nitrogen doping. The crystal structure, morphology, composition and photoresponse of the N-...

Structural and luminescence properties of europium(III)-doped zirconium carbonates and silica-supported Eu3+-doped zirconium carbonate nanoparticles

International Nuclear Information System (INIS)

Sivestrini, S.; Riello, P.; Freris, I.; Cristofori, D.; Enrichi, F.; Benedetti, A.

2010-01-01

The synthesis, morphology and luminescence properties of europium(III)-doped zirconium carbonates prepared as bulk materials and as silica-supported nanoparticles with differing calcination treatments are reported. Transmission electron microscopy and X-ray diffraction analyses have, respectively, been used to study the morphology and to quantify the atomic amount of europium present in the optically active phases of the variously prepared nanomaterials. Rietveld analysis was used to quantify the constituting phases and to determinate the europium content. Silica particles with an approximate size of 30 nm were coated with 2 nm carbonate nanoparticles, prepared in situ on the surface of the silica core. Luminescence measurements revealed the role of different preparation methods and of europium-doping quantities on the optical properties observed.

Experimental results on performance improvement of doped carbon-base materials

International Nuclear Information System (INIS)

Xu Zengyu

2002-01-01

Carbon-base materials is one of candidate plasma facing materials and have been widely used in current tokamak facilities in the world. But some defect properties are presented on high yield of chemical sputtering , high yield of radiation enhancement sublimate (RES), cracking after heat flux and so on. It can be improved by doped some little other elements into the carbon-base materials, such as boron, silicon, titanium and so on. Experimental results indicate that it is feasible and successful to improve thermo-physics and chemical properties of carbon-base materials by multi-element doped. Doped 12 % silicon can strained RES and chemical sputtering yield do not changed. It is the same level of chemical sputtering yield for B 4 C from 3 % to 10 % , but their resistance thermal shock properties ability increases with B 4 C increases

Terahertz radiation in In{sub 0.38}Ga{sub 0.62}As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

Energy Technology Data Exchange (ETDEWEB)

Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru; Khabibullin, R. A.; Yachmenev, A. E.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Ilyakov, I. E.; Shishkin, B. V.; Akhmedzhanov, R. A. [Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

2017-04-15

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In{sub 0.38}Ga{sub 0.62}As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10{sup –5} at a rather low optical fluence of ~40 μJ/cm{sup 2}, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

Status of fully integrated GaAs particle detectors

International Nuclear Information System (INIS)

Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

1999-01-01

GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

Silver-doped metal layers for medical applications

Czech Academy of Sciences Publication Activity Database

Kocourek, Tomáš; Jelínek, Miroslav; Mikšovský, Jan; Jurek, Karel; Weiserová, Marie

2014-01-01

Roč. 24, č. 8 (2014), s. 1-7, č. článku 085602. ISSN 1054-660X Institutional support: RVO:68378271 ; RVO:61388971 Keywords : silver -doped * layer * pulsed laser deposition * adhesion * antibacterial efficacy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.032, year: 2014

Towards quantum dots on GaAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Moesl, Johannes; Ludwig, Stefan [Fakultaet fuer Physik, Center for NanoScience, LMU Munich, Geschwister-Scholl- Platz 1, D-80539 Muenchen (Germany); Fontcuberta i Morral, Anna [TU Munich, Walter Schottky Institut, Am Coulombwall 3, 85748 Garching (Germany); EPF, Lausanne (Switzerland)

2009-07-01

Semiconductor nanowires is an emergent research topic in the field of nanoelectronics, as they form an excellent building block for 0D and 1D applications and allow novel architectures and material combinations. We study electronic transport properties of catalyst-free MBE grown GaAs nanowires, p-doped at a number of different doping levels. Detailed characterization of the wires including electronic contacts fabricated by e-beam lithography and based on palladium or annealed zinc-silver alloys are discussed. Contact properties and a pronounced hysteresis of the current through the nanowires, as a backgate-voltage is swept, are explained within tentative models. In addition we present first transport measurements on quantum dots, which are defined electrostatically as well as by etched constrictions.

Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 {mu}m operation

Energy Technology Data Exchange (ETDEWEB)

Chaqmaqchee, F.A.I. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Mazzucato, S., E-mail: smazzu@essex.ac.uk [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Sun, Y.; Balkan, N. [University of Essex, School of Computer Science and Electronic Engineering Colchester, CO43SQ (United Kingdom); Tiras, E. [Anadolu University, Faculty of Science, Physics Department, Yunus Emre Campus 26470, Eskisehir (Turkey); Hugues, M.; Hopkinson, M. [University of Sheffield, Electronic and Electrical Engineering Department, S1 3JD (United Kingdom)

2012-06-05

Highlights: Black-Right-Pointing-Pointer We electrically characterised two p-type doped DBRs for 1.3 {mu}m VCSOA applications. Black-Right-Pointing-Pointer Abrupt and graded structures were designed and investigated. Black-Right-Pointing-Pointer Longitudinal and vertical transports were measured as function of temperature. Black-Right-Pointing-Pointer Low series resistivity achieved using the interface composition grading technique. Black-Right-Pointing-Pointer Theoretical model confirmed the obtained results. - Abstract: The high resistivity that is encountered in p-type DBRs is an important problem in vertical cavity surface emitting lasers and optical amplifiers (VCSELs and VCSOAs). This is because the formation of potential barriers at the interfaces between layers of high and low refractive index inhibits the carrier flow, thus increasing the DBR series resistance. In this work, the electrical characteristics of two p-type doped DBR structures grown on undoped and p-type doped GaAs substrates have been investigated. The DBRs are designed for VCSOAs operating at 1.3 {mu}m and consist of 14-periods of alternating GaAs and Al{sub 0.9}Ga{sub 0.1}As in the first sample and 14-periods of GaAs and Al{sub 0.3}Ga{sub 0.7}As/Al{sub 0.9}Ga{sub 0.1}As in the second one. For the longitudinal transport sample, Hall mobility and sheet carrier density were measured in the temperature range from 77 to 300 K. In the vertical transport sample, current-voltage (I-V) measurements across the DBR layers were carried out at different temperatures in the range between 15 and 300 K. We achieved resistivity reduction in our samples by using an interface composition grading technique aimed at improving the VCSOA characteristics.

Microscopic unravelling of nano-carbon doping in MgB{sub 2} superconductors fabricated by diffusion method

Energy Technology Data Exchange (ETDEWEB)

Wong, D.C.K. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Yeoh, W.K. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); De Silva, K.S.B. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Institute for Nanoscale Technology, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007 (Australia); Kondyurin, A.; Bao, P. [School of Physics, The University of Sydney, New South Wales 2006 (Australia); Li, W.X. [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Xu, X.; Peleckis, G.; Dou, S.X. [Institute for Superconducting & Electronic Materials, University of Wollongong, North Wollongong, New South Wales 2500 (Australia); Ringer, S.P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, New South Wales 2006 (Australia); Australian Centre for Microscopy & Microanalysis, The University of Sydney, New South Wales 2006 (Australia); Zheng, R.K., E-mail: rongkun.zheng@sydney.edu.au [School of Physics, The University of Sydney, New South Wales 2006 (Australia)

2015-09-25

Highlights: • First report on nano-carbon doped MgB{sub 2} superconductors synthesized by diffusion method. • Microstructure and superconducting properties of the superconductors are discussed. • B{sub 4}C region blocks the Mg from reacting with B in the 10% nano-carbon doped sample. • MgB{sub 2} with 2.5% nano-carbon doped showed the highest J{sub c}, ≈10{sup 4} A/cm{sup 2} for 20 K at 4 T. - Abstract: We investigated the effects of nano-carbon doping as the intrinsic (B-site nano-carbon substitution) and extrinsic (nano-carbon derivatives) pinning by diffusion method. The contraction of the in-plane lattice confirmed the presence of disorder in boron sublattice caused by carbon substitution. The increasing value in full width half maximum (FWHM) in the X-ray diffraction (XRD) patterns with each increment in the doping level reveal smaller grains and imperfect MgB{sub 2} crystalline. The strain increased across the doping level due to the carbon substitution in the MgB{sub 2} matrix. The broadening of the T{sub c} curves from low to high doping showed suppression of the connectivity of the bulk samples with progressive dirtying. At high doping, the presence of B{sub 4}C region blocked the Mg from reacting with crystalline B thus hampering the formation of MgB{sub 2}. Furthermore, the unreacted Mg acted as a current blocking phase in lowering down the grain connectivity hence depressing the J{sub c} of the 10% nano-carbon doped MgB{sub 2} bulk superconductor.

Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

Science.gov (United States)

Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

2018-03-01

Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

Gd(iii)-doped carbon dots as a dual fluorescent-MRI probe

KAUST Repository

Bourlinos, Athanasios B.; Bakandritsos, Aristides; Kouloumpis, Antonios; Gournis, Dimitrios; Krysmann, Marta; Giannelis, Emmanuel P.; Polakova, Katerina; Safarova, Klara; Hola, Katerina; Zboril, Radek

2012-01-01

We describe the synthesis of Gd(iii)-doped carbon dots as dual fluorescence-MRI probes for biomedical applications. The derived Gd(iii)-doped carbon dots show uniform particle size (3-4 nm) and gadolinium distribution and form stable dispersions in water. More importantly, they exhibit bright fluorescence, strong T1-weighted MRI contrast and low cytotoxicity. © The Royal Society of Chemistry 2012.

Zeolitic imidazolate framework-8-derived N-doped porous carbon coated olive-shaped FeOx nanoparticles for lithium storage

Science.gov (United States)

Gan, Qingmeng; Zhao, Kuangmin; He, Zhen; Liu, Suqin; Li, Aikui

2018-04-01

We propose a new strategy to uniformly coat zeolitic imidazolate framework-8 (ZIF-8) on iron oxides containing no Zn to obtain an α-Fe2O3@ZIF-8 composite. After carbonization, the α-Fe2O3@ZIF-8 transforms into iron oxides@N-doped porous carbon (FeOx@NC). The uniform N-doped porous carbon layer gives rise to a superior electrical conductivity, highly-increased specific BET surface area (179.2 m2 g-1), and abundant mesopores for the FeOx@NC composite. When served as the LIB anode, the FeOx@NC shows a high reversible capacity (of 1064 mA h g-1 at 200 mA g-1), excellent rate performance (of 198.1 mA h g-1 at 10000 mA g-1) as well as brilliant long-term cyclability (with a capacity retention of 93.3% after 800 cycles), which are much better than those of the FeOx@C and pristine FeOx anodes. Specifically, the Li-ion intercalation pseudocapacitive behavior of the FeOx@NC anode is improved by this N-doped porous carbon coating, which is beneficial for rapid Li-ion insertion/extraction processes. The excellent electrochemical performance of FeOx@NC should be ascribed to the increased electrolyte penetration areas, improved electrical conductivity, boosted lithium storage kinetics, and shortened Li-ion transport length.

Resistance Fluctuations in GaAs Nanowire Grids

Directory of Open Access Journals (Sweden)

Ivan Marasović

2014-01-01

Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

International Nuclear Information System (INIS)

Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

2006-01-01

We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

Plasma treatment of porous GaAs surface formed by electrochemical etching method: Characterization and properties

International Nuclear Information System (INIS)

Saloum, S.; Naddaf, M.

2010-01-01

Porous GaAs samples were formed by electrochemical anodic etching of Zn doped p-type GaAs (100) wafers at different etching parameters (time, mode of applied voltage or current and electrolyte). The effect of etching parameters and plasma surface treatment on the optical properties of the prepared sample has been investigated by using room temperature photoluminescence (PL), Raman spectroscopy and reflectance spectroscopic measurements in the range (400-800 nm). The surface morphological changes were studied by using atomic force microscope. (author)

Determination of chemical state of Al doping element in ZnO layer

International Nuclear Information System (INIS)

Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

2011-01-01

Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

Science.gov (United States)

Carns, Timothy Keith

With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

Neutron transmutation doping of gallium arsenide

International Nuclear Information System (INIS)

Alexiev, D.

1987-12-01

Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

Energy Technology Data Exchange (ETDEWEB)

He, Yunrui; Wang, Jun, E-mail: wangjun12@bupt.edu.cn; Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

2015-05-18

The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

Analysis of mechanism of carbon removal from GaAs(1 0 0) surface by atomic hydrogen

International Nuclear Information System (INIS)

Tomkiewicz, P.; Winkler, A.; Krzywiecki, M.; Chasse, Th.; Szuber, J.

2008-01-01

Etching of carbon contaminations from the GaAs(1 0 0) surface by irradiating with atomic hydrogen, which is one of the key reactions to promote high-quality thin films growth by molecular beam epitaxy (MBE), has been investigated by mass spectrometry (MS), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It is shown that during the cleaning process at room temperature a total reduction of the Auger carbon signal, accompanied by desorption of methane as major reaction product, can be observed. The reaction pathways as well as the processes responsible for the observed carbon removal are discussed in detail to give a support for etching and growth quality enhancement not only in thin films epitaxy but in all atomic hydrogen promoted gas-phase III-V semiconductor processes

Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

Directory of Open Access Journals (Sweden)

Kang Xia

2014-03-01

Full Text Available Doping is an effective approach that allows for the intrinsic modification of the electrical and chemical properties of nanomaterials. Recently, a graphene and carbon nanotube hybrid structure (GNHS has been reported, which extends the excellent properties of carbon-based materials to three dimensions. In this paper, we carried out a first-time investigation on the tensile properties of the hybrid structures with different dopants. It is found that with the presence of dopants, the hybrid structures usually exhibit lower yield strength, Young’s modulus, and earlier yielding compared to that of a pristine hybrid structure. For dopant concentrations below 2.5% no significant reduction of Young’s modulus or yield strength could be observed. For all considered samples, the failure is found to initiate at the region where the nanotubes and graphene sheets are connected. After failure, monatomic chains are normally observed around the failure region. Dangling graphene layers without the separation of a residual CNT wall are found to adhere to each other after failure with a distance of about 3.4 Å. This study provides a fundamental understanding of the tensile properties of the doped graphene–nanotube hybrid structures, which will benefit the design and also the applications of graphene-based hybrid materials.

Improving hydrogen storage in Ni-doped carbon nanospheres

Energy Technology Data Exchange (ETDEWEB)

Zubizarreta, L.; Menendez, J.A.; Pis, J.J.; Arenillas, A. [Instituto Nacional del Carbon, CSIC, Apartado 73, 33080 Oviedo (Spain)

2009-04-15

The effect of nickel distribution and content in Ni-doped carbon nanospheres on hydrogen storage capacity under conditions of moderate temperature and pressure was studied. It was found that the nickel distribution, obtained by using different doping techniques and conditions, has a noticeable influence on hydrogen storage capacity. The samples with the most homogeneous nickel distribution, obtained by pre-oxidising the carbon nanospheres, displayed the highest storage capacity. In addition, storage capacity is influenced by the amount of nickel. It was found a higher storage capacity in samples containing 5 wt.% of Ni. This is due to the greater interactions between the nickel and the support that produce a higher activation of the solid through a spillover effect. (author)

Transition Metal Ions Enable the Transition from Electrospun Prolamin Protein Fibers to Nitrogen-Doped Freestanding Carbon Films for Flexible Supercapacitors.

Science.gov (United States)

Wang, Yixiang; Yang, Jingqi; Du, Rongbing; Chen, Lingyun

2017-07-19

Flexible carbon ultrafine fibers are highly desirable in energy storage and conversion devices. Our previous finding showed that electrospun hordein/zein fibers stabilized by Ca 2+ were successfully transferred into nitrogen-doped carbon ultrafine fibers for supercapacitors. However, their relatively brittle nature needed to be improved. Inspired by this stabilizing effect of Ca 2+ , in this work, four transition metal divalent cations were used to assist the formation of flexible hordein/zein-derived carbon ultrafine fibers. Without alteration of the electrospinnability, adequate amounts of zinc acetate and cobalt acetate supported the fibrous structure during pyrolysis. This resulted in flexible freestanding carbon films consisting of well-defined fibers with nitrogen-doped graphitic layers and hierarchical pores. These carbon films were easily cut into small square pieces and directly applied as working electrode in the three-electrode testing system without the need for polymer binders or conducting agents. Notably, the hz-Zn0.3-p electrode, synthesized with 0.3 mol/L Zn 2+ and post-acid treatment, exhibited a specific capacitance of 393 F/g (at 1 A/g), a large rate capability (72.3% remained at 20 A/g), and a capacitance retention of ∼98% after 2000 charging-discharging cycles at 10 A/g. These superior electrochemical properties were attributed to the synergistic effects of the well-developed graphitic layers induced by Zn 2+ , the nitrogen-decorated carbon structure, and the interconnected channels generated by HCl treatment. This research advances potential applications for prolamin proteins as nitrogen-containing raw materials in developing carbon structures for high-performance supercapacitors.

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

International Nuclear Information System (INIS)

Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

1990-01-01

Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

Electrical characterisation of Sn doped InAs grown by MOVPE

International Nuclear Information System (INIS)

Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

2008-01-01

The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

International Nuclear Information System (INIS)

Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

2010-01-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Surface segregation and the Al problem in GaAs quantum wells

Science.gov (United States)

Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Shayegan, M.; Pfeiffer, L. N.

2018-03-01

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped AlxGa1 -xAs /GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the AlxGa1 -xAs barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the AlxGa1 -xAs barrier beneath the QW is increased, which we attribute to the surface segregation of oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.

Intraband scattering studies in carbon- and aluminium-doped MgB2

International Nuclear Information System (INIS)

Samuely, P.; Szabo, P.; Hol'anova, Z.; Bud'ko, S.; Canfield, P.

2006-01-01

Magnetic field effect on the point-contact spectra of the Al- and C-substituted MgB 2 is presented. It is shown that suppression of the π-band contribution to the spectrum is different in the aluminium- and carbon-doped samples. The carbon substitution leads to a stronger enhancement of the π-band scattering while the Al-doping does not change the ratio between the π and σ scatterings

AlTiN layer effect on mechanical properties of Ti-doped diamond-like carbon composite coatings

International Nuclear Information System (INIS)

Pang Xiaolu; Yang Huisheng; Gao Kewei; Wang Yanbin; Volinsky, Alex A.

2011-01-01

Ti/Ti-doped diamond-like carbon (DLC) and Ti/AlTiN/Ti-DLC composite coatings were deposited by magnetron sputtering on W18Cr4V high speed steel substrates. The effect of the AlTiN support layer on the properties of these composite coatings was investigated through microstructure and mechanical properties characterization, including hardness, elastic modulus, coefficient of friction and wear properties measured by scanning electron microscopy, Raman spectroscopy, scratch and ball-on-disk friction tests. Ti and AlTiN interlayers have a columnar structure with 50-80 nm grains. The hardness and elastic modulus of Ti/Ti-DLC and Ti/AlTiN/Ti-DLC coatings is 25.9 ± 0.4, 222.2 ± 6.3 GPa and 19.3 ± 1, 205.6 ± 6.7 GPa, respectively. Adhesion of Ti-DLC, Ti/AlTiN/Ti-DLC and AlTiN/Ti-DLC coatings expressed as the critical lateral force is 26.5 N, 38.2 N, and 47.8 N, respectively. Substrate coefficient of friction without coatings is 0.44, and it is 0.1 for Ti/Ti-DLC and Ti/AlTiN/Ti-DLC coatings. Wear resistance of Ti/AlTiN/Ti-DLC composite coatings is much higher than Ti/Ti-DLC coatings based on the wear track width of 169.8 and 73.2 μm, respectively, for the same experimental conditions.

One-pot synthetic method to prepare highly N-doped nanoporous carbons for CO2 adsorption

International Nuclear Information System (INIS)

Meng, Long-Yue; Park, Soo-Jin

2014-01-01

A one-pot synthetic method was used for the preparation of nanoporous carbon containing nitrogen from polypyrrole (PPY) using NaOH as the activated agent. The activation process was carried out under set conditions (NaOH/PPY = 2 and NaOH/PPY = 4) at different temperatures in 600–900 °C for 2 h. The effect of the activation conditions on the pore structure, surface functional groups and CO 2 adsorption capacities of the prepared N-doped activated carbons was examined. The carbon was analyzed by X-ray photoelectron spectroscopy (XPS), N2/77 K full isotherms, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The CO 2 adsorption capacity of the N-doped activated carbon was measured at 298 K and 1 bar. By dissolving the activation agents, the N-doped activated carbon exhibited high specific surface areas (755–2169 m 2 g −1 ) and high pore volumes (0.394–1.591 cm 3 g −1 ). In addition, the N-doped activated carbons contained a high N content at lower activation temperatures (7.05 wt.%). The N-doped activated carbons showed a very high CO 2 adsorption capacity of 177 mg g −1 at 298 K and 1 bar. The CO 2 adsorption capacity was found to be dependent on the microporosity and N contents. - Highlights: • A one-pot synthetic method was used for the preparation of N-doped nanoporous carbons. • Polypyrrole (PPY) were activated with NaOH under set conditions (NaOH/PPY = 2 and 4). • N-doped activated carbon exhibited high specific surface areas (2169 m 2 g −1 ). • The carbons showed a very high CO 2 adsorption capacity of 177 mg g −1 at 298 K

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

International Nuclear Information System (INIS)

Bogumilowicz, Y.; Hartmann, J.M.

2014-01-01

We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

The lower yield point of InP and GaAs

International Nuclear Information System (INIS)

Siethoff, H.

1987-01-01

A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

Highly effective catalytic peroxymonosulfate activation on N-doped mesoporous carbon for o-phenylphenol degradation.

Science.gov (United States)

Hou, Jifei; Yang, Shasha; Wan, Haiqin; Fu, Heyun; Qu, Xiaolei; Xu, Zhaoyi; Zheng, Shourong

2018-04-01

As a broad-spectrum preservative, toxic o-phenylphenol (OPP) was frequently detected in aquatic environments. In this study, N-doped mesoporous carbon was prepared by a hard template method using different nitrogen precursors and carbonization temperatures (i.e., 700, 850 and 1000 °C), and was used to activate peroxymonosulfate (PMS) for OPP degradation. For comparison, mesoporous carbon (CMK-3) was also prepared. Characterization results showed that the N-doped mesoporous carbon samples prepared under different conditions were perfect replica of their template. In comparison with ethylenediamine (EDA) and dicyandiamide (DCDA) as the precursors, N-doped mesoporous carbon prepared using EDA and carbon tetrachloride as the precursors displayed a higher catalytic activity for OPP degradation. Increasing carbonization temperature of N-doped mesoporous carbon led to decreased N content and increased graphitic N content at the expense of pyridinic and pyrrolic N. Electron paramagnetic resonance (EPR) analysis showed that PMS activation on N-doped mesoporous carbon resulted in highly active species and singlet oxygen, and catalytic PMS activation for OPP degradation followed a combined radical and nonradical reaction mechanism. Increasing PMS concentration enhanced OPP degradation, while OPP degradation rate was independent on initial OPP concentration. Furthermore, the dependency of OPP degradation on PMS concentration followed the Langmuir-Hinshelwood model, reflecting that the activation of adsorbed PMS was the rate controlling step. Based on the analysis by time-of-flight mass spectrometry, the degradation pathway of OPP was proposed. Copyright © 2018 Elsevier Ltd. All rights reserved.

Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

Science.gov (United States)

Anghel, S.; Passmann, F.; Singh, A.; Ruppert, C.; Poshakinskiy, A. V.; Tarasenko, S. A.; Moore, J. N.; Yusa, G.; Mano, T.; Noda, T.; Li, X.; Bristow, A. D.; Betz, M.

2018-03-01

Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λSOI is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λSOI through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λSOI and diffusion coefficient.

Enhancing Photovoltaic Performance of Inverted Planar Perovskite Solar Cells by Cobalt-Doped Nickel Oxide Hole Transport Layer.

Science.gov (United States)

Xie, Yulin; Lu, Kai; Duan, Jiashun; Jiang, Youyu; Hu, Lin; Liu, Tiefeng; Zhou, Yinhua; Hu, Bin

2018-04-25

Electron and hole transport layers have critical impacts on the overall performance of perovskite solar cells (PSCs). Herein, for the first time, a solution-processed cobalt (Co)-doped NiO X film was fabricated as the hole transport layer in inverted planar PSCs, and the solar cells exhibit 18.6% power conversion efficiency. It has been found that an appropriate Co-doping can significantly adjust the work function and enhance electrical conductivity of the NiO X film. Capacitance-voltage ( C- V) spectra and time-resolved photoluminescence spectra indicate clearly that the charge accumulation becomes more pronounced in the Co-doped NiO X -based photovoltaic devices; it, as a consequence, prevents the nonradiative recombination at the interface between the Co-doped NiO X and the photoactive perovskite layers. Moreover, field-dependent photoluminescence measurements indicate that Co-doped NiO X -based devices can also effectively inhibit the radiative recombination process in the perovskite layer and finally facilitate the generation of photocurrent. Our work indicates that Co-doped NiO X film is an excellent candidate for high-performance inverted planar PSCs.

Optimal thickness of hole transport layer in doped OLEDs

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.C.; Zhou, J.; Zhao, J.M.; Zhang, S.T.; Zhan, Y.Q.; Wang, X.Z.; Wu, Y.; Ding, X.M.; Hou, X.Y. [Fudan University, Surface Physics Laboratory (National Key Laboratory), Shanghai (China)

2006-06-15

Current-voltage (I-V) and electroluminescence (EL) characteristics of organic light-emitting devices with N,N'-Di-[(1-naphthalenyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB) of various thicknesses as the hole transport layer, and tris(8-hydroxyquinoline)aluminum (Alq{sub 3}) selectively doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) as the electron transport layer, have been investigated. A trapped charge induced band bend model is proposed to explain the I-V characteristics. It is suggested that space charge changes the injection barrier and therefore influences the electron injection process in addition to the carrier transport process. Enhanced external quantum efficiency of the devices due to the electron blocking effect of an inserted NPB layer is observed. The optimal thickness of the NPB layer is experimentally determined to be 12{+-}3 nm in doped devices, a value different from that for undoped devices, which is attributed to the electron trap effect of DCM molecules. This is consistent with the result that the proportion of Alq{sub 3} luminescence in the total electroluminescence (EL) spectra increases with NPB thickness up to 12 nm under a fixed bias. (orig.)

Electronic structure of p type Delta doped systems

International Nuclear Information System (INIS)

Gaggero S, L.M.; Perez A, R.

1998-01-01

We summarize of the results obtained for the electronic structure of quantum wells that consist in an atomic layer doped with impurities of p type. The calculations are made within the frame worth of the wrapper function approach to independent bands and with potentials of Hartree. We study the cases reported experimentally (Be in GaAs and B in Si). We present the levels of energy, the wave functions and the rate of the electronic population between the different subbands, as well as the dependence of these magnitudes with the density of impurities in the layer. The participation of the bans of heavy holes is analysed, light and split-off band in the total electronic population. The effect of the temperature is discussed and we give a possible qualitative explanation of the experimental optical properties. (Author)

Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

KAUST Repository

Ohkawa, Kazuhiro

2017-10-24

GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.

Heteroatom-doped porous carbon from methyl orange dye wastewater for oxygen reduction

Directory of Open Access Journals (Sweden)

Yiqing Wang

2018-04-01

Full Text Available Banana peel-derived porous carbon (BPPC was prepared from banana peel and used as an adsorbent for methyl orange (MO wastewater removal. BPPC-MO50 is a N,S-doped BPPC obtained via secondary carbonization. The BPPC-MO50 exhibited a high specific surface area of 1774.3 m2/g. Heteroatom-doped porous carbon (PC was successfully synthesized from the BPPC absorbed MO at high temperature and used for oxygen reduction. The BPPC-MO50 displayed the highest ORR onset potential among all carbon-based electrocatalysts, i.e., 0.93 V vs. reversible hydrogen electrode (RHE. This is the first report to describe porous carbon-activated materials from agriculture and forestry waste that is used for adsorption of dyes from wastewater via an enhanced heteroatom (N,S content. These results may contribute to the sustainable development of dye wastewater treatment by transforming saturated PC into an effective material and has potential applications in fuel cells or as energy sources. Keywords: Banana peel, Dye wastewater, Porous carbon, Heteroatom doping, Oxygen reduction reaction

Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

International Nuclear Information System (INIS)

Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

2015-01-01

Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Science.gov (United States)

Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

2018-01-01

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

Unexpected strong magnetism of Cu doped single-layer MoS₂ and its origin.

Science.gov (United States)

Yun, Won Seok; Lee, J D

2014-05-21

The magnetism of the 3d transition-metal (TM) doped single-layer (1L) MoS2, where the Mo atom is partially replaced by the 3d TM atom, is investigated using the first-principles density functional calculations. In a series of 3d TM doped 1L-MoS2's, the induced spin polarizations are negligible for Sc, Ti, and Cr dopings, while the induced spin polarizations are confirmed for V, Mn, Fe, Co, Ni, Cu, and Zn dopings and the systems become magnetic. Especially, the Cu doped system shows unexpectedly strong magnetism although Cu is nonmagnetic in its bulk state. The driving force is found to be a strong hybridization between Cu 3d states and 3p states of neighboring S, which results in an extreme unbalanced spin-population in the spin-split impurity bands near the Fermi level. Finally, we also discuss further issues of the Cu induced magnetism of 1L-MoS2 such as investigation of additional charge states, the Cu doping at the S site instead of the Mo site, and the Cu adatom on the layer (i.e., 1L-MoS2).

Microwave GaAs Integrated Circuits On Quartz Substrates

Science.gov (United States)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Structure and functionality of bromine doped graphite.

Science.gov (United States)

Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P

2013-04-28

First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

SnS2 nanosheets arrays sandwiched by N-doped carbon and TiO2 for high-performance Na-ion storage

Directory of Open Access Journals (Sweden)

Weina Ren

2018-01-01

Full Text Available In this paper, SnS2 nanosheets arrays sandwiched by porous N-doped carbon and TiO2 (TiO2@SnS2@N-C on flexible carbon cloth are prepared and tested as a free-standing anode for high-performance sodium ion batteries. The as-obtained TiO2@SnS2@N-C composite delivers a remarkable capacity performance (840 mA h g−1 at a current density of 200 mA g−1, excellent rate capability and long-cycling life stability (293 mA h g−1 at 1 A g−1 after 600 cycles. The excellent electrochemical performance can be attributed to the synergistic effect of each component of the unique hybrid structure, in which the SnS2 nanosheets with open framworks offer high capacity, while the porous N-doped carbon nanoplates arrays on flexible carbon cloth are able to improve the conductivity and the TiO2 passivation layer can keep the structure integrity of SnS2 nanosheets.

Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

KAUST Repository

Cheng, Yingchun; Zhang, Q. Y.; Schwingenschlö gl, Udo

2014-01-01

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we

In Situ One-Step Synthesis of Hierarchical Nitrogen-Doped Porous Carbon for High Performance Supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Jeon, Ju Won [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Texas A & M Univ., College Station, TX (United States); Sharma, Ronish [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Meduri, Praveen [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Arey, Bruce W. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Schaef, Herbert T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lutkenhaus, Jodie [Texas A & M Univ., College Station, TX (United States); Lemmon, John P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Thallapally, Praveen K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nandasiri, Manjula I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McGrail, B. Peter [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nune, Satish K. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2014-04-30

Electrochemical performance of the existing state-of-the art capacitors is not very high, key scientific barrier is that its charge storage mechanism wholly depends on adsorption of electrolyte on electrode. We present a novel method for the synthesis of nitrogen -doped porous carbons and address the drawback by precisely controlling composition and surface area. Nitrogen-doped porous carbon was synthesized using a self-sacrificial template technique without any additional nitrogen and carbon sources. They exhibited exceptionally high capacitance (239 Fg-1) due to additional pseudocapacitance originating from doped nitrogen. Cycling tests showed no obvious capacitance decay even after 10,000 cycles, which meets the requirement of commercial supercapacitors. Our method is simple and highly efficient for the production of large quantities of nitrogen-doped porous carbons.

Organic Light-Emitting Diodes with Magnesium Doped CuPc as an Efficient Electron Injection Layer

International Nuclear Information System (INIS)

Jun-Song, Cao; Min, Guan; Guo-Hua, Cao; Yi-Ping, Zeng; Jin-Min, Li; Da-Shan, Qin

2008-01-01

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine(CuPc)/N,N-bis-(1-naphthl)-diphenyl-1, 1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) alu-minum(Alq 3 )/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m 2 and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m 2 and 1.25 cd/A

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

2011-01-01

Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Steps in growth of Nb-doped layered titanates with very high surface area suitable for water purification

International Nuclear Information System (INIS)

Milanović, Marija; Nikolić, Ljubica M.; Stijepović, Ivan; Kontos, Athanassios G.; Giannakopoulos, Konstantinos P.

2014-01-01

Nb-doped layered titanates, as highly efficient adsorbents, have been synthesized by hydrothermal reaction for variable duration and at 150 °C in a highly alkaline solution with NbCl 5 as the Nb source. The results have shown the formation of nanosheets already after 1 h of hydrothermal processing, but morphology and phase composition change as the reaction proceeds. The prepared layered titanates have been structurally investigated via scanning and transmission electron microscopy, X-ray diffraction, as well as Raman and Fourier transform infrared spectroscopies. The steps of layered titanate growth have been followed and an intermediate layered anatase phase is identified. Thus optimized growth of mesoporous titanate materials with 10% Nb atomic content present very high specific surface area of 345.3 m 2  g −1 , and perform as very efficient adsorbents for wastewater treatment applications. - Highlights: • Nb-doped layered titanates have been prepared by a hydrothermal procedure. • Introduction of Nb to precursor lowers the rate of layered titanate formation. • Steps in growth of Nb-doped layered titanates are considered. • Nb-doped layered titanates show high/fast MB adsorption from concentrated solution

Modified energetics and growth kinetics on H-terminated GaAs (110)

International Nuclear Information System (INIS)

Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

2013-01-01

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As 4 , has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å 2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As 4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed

Modified energetics and growth kinetics on H-terminated GaAs (110)

Energy Technology Data Exchange (ETDEWEB)

Galiana, B. [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Departamento de Física, Universidad Carlos III de Madrid, Avenida de la Universidad 30, 28911 Madrid (Spain); Benedicto, M.; Díez-Merino, L.; Tejedor, P. [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Lorbek, S.; Hlawacek, G.; Teichert, C. [Institut für Physik, Montanuniversität Leoben, Franz Josef St., 18A-8700 Leoben (Austria)

2013-10-28

Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

Structural, electronic properties, and quantum capacitance of B, N and P-doped armchair carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Mousavi-Khoshdel, S. Morteza, E-mail: mmousavi@iust.ac.ir [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Jahanbakhsh-bonab, Parisa [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Targholi, Ehsan [Young Researchers and Elite Club, Abhar Branch, Islamic Azad University, Abhar (Iran, Islamic Republic of)

2016-10-07

Using DFT calculations, we study the structural parameters, electronic properties and quantum capacitance of N, B, and P-doped armchair carbon nanotubes (CNTs). Fermi level shifts towards conduction band and valence band in N- and B-doped CNTs, respectively. While in the case of P atom, despite having an extra valence electron than carbon, there is no shift in Fermi level. The results revealed from a symmetric capacitance enhancement in P-doped CNT and an asymmetric capacitance enhancement in B and N-doped CNTs. The greatest amount of quantum capacitance of N-doped (6, 6) CNT could be achieved at the concentration range of 0.1–0.15. - Highlights: • Exploration of variation in quantum capacitance of CNTs through doping N, B and P atoms. • Quantum capacitance of CNTs is sensitive to impurities entered in carbon nanotubes. • Maximum quantum capacitance of N-doped CNTs is achieved at the concentration range of 0.1–0.15.

Boron-doped MnO{sub 2}/carbon fiber composite electrode for supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Chi, Hong Zhong, E-mail: hzchi@hdu.edu.cn [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhu, Hongjie [College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Gao, Linhui [Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

2015-10-05

Highlights: • Interstitial ion in MnO{sub 2} lattice. • Porous film composed by interlocking worm-like nanostructure. • Boron-doped birnessite-type MnO{sub 2}/carbon fiber composite electrode. • Enhanced capacitive properties through nonmetal element doping. - Abstract: The boron-doped MnO{sub 2}/carbon fiber composite electrode has been prepared via in situ redox reaction between potassium permanganate and carbon fibers in the presence of boric acid. The addition of boron as dopant results in the increase of growth-rate of MnO{sub 2} crystal and the formation of worm-like nanostructure. Based on the analysis of binding energy, element boron incorporates into the MnO{sub 2} lattice through interstitial mode. The doped electrode with porous framework is beneficial to pseudocapacitive reaction and surface charge storage, leading to higher specific capacitance and superior rate capability. After experienced 1000 cycles, the boron-doped MnO{sub 2} still retain a higher specific capacitance by about 80% of its initial value. The fall in capacitance is blamed to be the combination of the formation of soluble Mn{sup 2+} and the absence of active site on the outer surface.

Bulk Heterojunction Solar Cell with Nitrogen-Doped Carbon Nanotubes in the Active Layer: Effect of Nanocomposite Synthesis Technique on Photovoltaic Properties

Directory of Open Access Journals (Sweden)

Godfrey Keru

2015-05-01

Full Text Available Nanocomposites of poly(3-hexylthiophene (P3HT and nitrogen-doped carbon nanotubes (N-CNTs have been synthesized by two methods; specifically, direct solution mixing and in situ polymerization. The nanocomposites were characterized by means of transmission electron microscopy (TEM, scanning electron microscopy (SEM, X-ray dispersive spectroscopy, UV-Vis spectrophotometry, photoluminescence spectrophotometry (PL, Fourier transform infrared spectroscopy (FTIR, Raman spectroscopy, thermogravimetric analysis, and dispersive surface energy analysis. The nanocomposites were used in the active layer of a bulk heterojunction organic solar cell with the composition ITO/PEDOT:PSS/P3HT:N-CNTS:PCBM/LiF/Al. TEM and SEM analysis showed that the polymer successfully wrapped the N-CNTs. FTIR results indicated good π-π interaction within the nanocomposite synthesized by in situ polymerization as opposed to samples made by direct solution mixing. Dispersive surface energies of the N-CNTs and nanocomposites supported the fact that polymer covered the N-CNTs well. J-V analysis show that good devices were formed from the two nanocomposites, however, the in situ polymerization nanocomposite showed better photovoltaic characteristics.

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

Science.gov (United States)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

Superior supercapacitors based on nitrogen and sulfur co-doped hierarchical porous carbon: Excellent rate capability and cycle stability

Science.gov (United States)

Zhang, Deyi; Han, Mei; Wang, Bing; Li, Yubing; Lei, Longyan; Wang, Kunjie; Wang, Yi; Zhang, Liang; Feng, Huixia

2017-08-01

Vastly improving the charge storage capability of supercapacitors without sacrificing their high power density and cycle performance would bring bright application prospect. Herein, we report a nitrogen and sulfur co-doped hierarchical porous carbon (NSHPC) with very superior capacitance performance fabricated by KOH activation of nitrogen and sulfur co-doped ordered mesoporous carbon (NSOMC). A high electrochemical double-layer (EDL) capacitance of 351 F g-1 was observed for the reported NSHPC electrodes, and the capacitance remains at 288 F g-1 even under a large current density of 20 A g-1. Besides the high specific capacitance and outstanding rate capability, symmetrical supercapacitor cell based on the NSHPC electrodes also exhibits an excellent cycling performance with 95.61% capacitance retention after 5000 times charge/discharge cycles. The large surface area caused by KOH activation (2056 m2 g-1) and high utilized surface area owing to the ideal micro/mesopores ratio (2.88), large micropores diameter (1.38 nm) and short opened micropores structure as well as the enhanced surface wettability induced by N and S heteroatoms doping and improved conductivity induced by KOH activation was found to be responsible for the very superior capacitance performance.

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

International Nuclear Information System (INIS)

Zhukov, A. E.; Asryan, L. V.; Semenova, E. S.; Zubov, F. I.; Kryzhanovskaya, N. V.; Maximov, M. V.

2015-01-01

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In 0.232 Al 0.594 Ga 0.174 As/Al 0.355 Ga 0.645 As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution

Hybrid laser technology and doped biomaterials

Science.gov (United States)

Jelínek, Miroslav; Zemek, Josef; Remsa, Jan; Mikšovský, Jan; Kocourek, Tomáš; Písařík, Petr; Trávníčková, Martina; Filová, Elena; Bačáková, Lucie

2017-09-01

Hybrid laser-based technologies for deposition of new types of doped thin films are presented. The focus is on arrangements combining pulsed laser deposition (PLD) with magnetron sputtering (MS), and on the setup with two simultaneously running PLD systems (dual PLD). Advantages and disadvantages of both arrangements are discussed. Layers of different dopants concentration were prepared. Experience with deposition of chromium and titanium doped diamond-like carbon (DLC) films for potential coating of bone implants is presented. Properties of the layers prepared by both technologies are compared and discussed. The suitability of the layers for colonization with human bone marrow mesenchymal stem cells and human osteoblast-like cells, were also evaluated under in vitro conditions.

Hydrogen storage in pure and Li-doped carbon nanopores: combined effects of concavity and doping.

Science.gov (United States)

Cabria, I; López, M J; Alonso, J A

2008-04-14

Density functional calculations are reported for the adsorption of molecular hydrogen on carbon nanopores. Two models for the pores have been considered: (i) The inner walls of (7,7) carbon nanotubes and (ii) the highly curved inner surface of nanotubes capped on one end. The effect of Li doping is investigated in all cases. The hydrogen physisorption energies increase due to the concavity effect inside the clean nanotubes and on the bottom of the capped nanotubes. Li doping also enhances the physisorption energies. The sum of those two effects leads to an increase by a factor of almost 3 with respect to the physisorption in the outer wall of undoped nanotubes and in flat graphene. Application of a quantum-thermodynamical model to clean cylindrical pores of diameter 9.5 A, the diameter of the (7,7) tube, indicates that cylindrical pores of this size can store enough hydrogen to reach the volumetric and gravimetric goals of the Department of Energy at 77 K and low pressures, although not at 300 K. The results are useful to explain the experiments on porous carbons. Optimizations of the pore size, concavity, and doping appear as promising alternatives for achieving the goals at room temperature.

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

Directory of Open Access Journals (Sweden)

K. R. Simov

2018-01-01

Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

GaAs nanowire array solar cells with axial p-i-n junctions.

Science.gov (United States)

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

KAUST Repository

Zhang, Dongen

2013-01-01

Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.

Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100 Surfaces

Directory of Open Access Journals (Sweden)

Zhou Lin

2008-01-01

Full Text Available Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100 substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

Promoting mechanism of N-doped single-walled carbon nanotubes for O2 dissociation and SO2 oxidation

Science.gov (United States)

Chen, Yanqiu; Yin, Shi; Chen, Yang; Cen, Wanglai; Li, Jianjun; Yin, Huaqiang

2018-03-01

Although heteroatom doping in carbon based catalysts have recently received intensive attentions, the role of the intrinsically porous structure of practical carbon materials and their potential synergy with doping atoms are still unclear. To investigate the complex effects, a range of N-doped single-walled carbon nanotubes (SWCNTs) were used to investigate their potential use for O2 dissociation and the subsequent SO2 oxidation using density functional theory. It is found that graphite N doping can synergize with the outer surface of SWCNTs to facilitate the dissociation of O2. The barrier for the dissociation on dual graphite N-doped SWCNT-(8, 8) is as low as 0.3 eV, and the subsequent SO2 oxidation is thermodynamically favorable and kinetically feasible. These results spotlight on developing promising carboncatalyst via utilization of porous gemometry and heteroatom-doping of carbon materials simultaneously.

Double-wall carbon nanotubes doped with different Br2 doping levels: a resonance Raman study.

Science.gov (United States)

do Nascimento, Gustavo M; Hou, Taige; Kim, Yoong Ahm; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Akuzawa, Noboru; Dresselhaus, Mildred S

2008-12-01

This report focuses on the effects of different Br2 doping levels on the radial breathing modes of "double-wall carbon nanotube (DWNT) buckypaper". The resonance Raman profile of the Br2 bands are shown for different DWNT configurations with different Br2 doping levels. Near the maximum intensity of the resonance Raman profile, mainly the Br2 molecules adsorbed on the DWNT surface contribute strongly to the observed omega(Br-Br) Raman signal.

Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F. [University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573 (Japan)

2004-09-01

In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerance of GaAs and that Ti can protected GaAs from erosion by NH{sub 3}. By depositing Ti on GaAs(111)A surface, a mirror-like GaN layer could be grown at 1000 C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of doped copper on electrochemical performance of the raw carbon nanotubes anode

Energy Technology Data Exchange (ETDEWEB)

Yang, Zhanhong; Simard, Benoit [SIMS, National Research Council, 100 Sussex Dr., Ottawa, ON (Canada); Li, Zaifeng [ICPET, National Research Council, 1200 Montreal Road, Ottawa, ON (Canada); Wu, Haoqing [Department of Chemistry, Fudan University, Shanghai 200433 (China)

2003-07-01

The raw carbon nanotubes pre-doped with copper are used as anode materials for lithium ion batteries. Constant current discharge and charge tests using the raw carbon nanotubes pre-doped with copper as Li{sup +} storage compounds show lower specific capacities than that of the acid-oxidized carbon nanotubes. The acids play an important role; H{sub 2}SO{sub 4} and HNO{sub 3} can easily permeate through the graphene sheets, then they will make the defects or pores in the graphene sheets, and this reaction can make the expansion of the graphite. Meanwhile, Cu{sup 2+} will diffuse into the pores and onto the outer surfaces of the carbon nanotubes. Cu{sup 2+} can be easily turned into Cu at high temperature in the presence of the carbon nanomaterial. So parts of the pores and the surfaces of the carbon nanotubes will be filled with the Cu atom. Once the space positions of the nanotubes were occupied, lithium cannot intercalate into the pores and onto the outer surface of the carbon nanotubes, thus the doped carbon nanotubes will have a low specific capacity.

Compositionally modulated multilayer diamond-like carbon coatings with AlTiSi multi-doping by reactive high power impulse magnetron sputtering

Science.gov (United States)

Dai, Wei; Gao, Xiang; Liu, Jingmao; Kwon, Se-Hun; Wang, Qimin

2017-12-01

Diamond-like carbon (DLC) coatings with AlTiSi multi-doping were prepared by a reactive high power impulse magnetron sputtering with using a gas mixture of Ar and C2H2 as precursor. The composition, microstructure, compressive stress, and mechanical property of the as-deposited DLC coatings were studied systemically by using SEM, XPS, TEM, Raman spectrum, stress-tester, and nanoindentation as a function of the Ar fraction. The results show that the doping concentrations of the Al, Ti and Si atoms increased as the Ar fraction increased. The doped Ti and Si preferred to bond with C while the doped Al mainly existed in oxidation state without bonding with C. As the doping concentrations increased, TiC carbide nanocrystals were formed in the DLC matrix. The microstructure of coatings changed from an amorphous feature dominant AlTiSi-DLC to a carbide nanocomposite AlTiSi-DLC with TiC nanoparticles embedding. In addition, the coatings exhibited the compositionally modulated multilayer consisting of alternate Al-rich layer and Al-poor layer due to the rotation of the substrate holder and the diffusion behavior of the doped Al which tended to separate from C and diffuse towards the DLC matrix surface owing to its weak interactions with C. The periodic Al-rich layer can effectively release the compressive stress of the coatings. On the other hand, the hard TiC nanoparticles were conducive to the hardness of the coatings. Consequently, the DLC coatings with relatively low residual stress and high hardness could be acquired successfully through AlTiSi multi-doping. It is believed that the AlCrSi multi-doping may be a good way for improving the comprehensive properties of the DLC coatings. In addition, we believe that the DLC coatings with Al-rich multilayered structure have a high oxidation resistance, which allows the DLC coatings application in high temperature environment.

A high-performance mesoporous carbon supported nitrogen-doped carbon electrocatalyst for oxygen reduction reaction

Science.gov (United States)

Xu, Jingjing; Lu, Shiyao; Chen, Xu; Wang, Jianan; Zhang, Bo; Zhang, Xinyu; Xiao, Chunhui; Ding, Shujiang

2017-12-01

Investigating low-cost and highly active electrocatalysts for oxygen reduction reactions (ORR) is of crucial importance for energy conversion and storage devices. Herein, we design and prepare mesoporous carbon supported nitrogen-doped carbon by pyrolysis of polyaniline coated on CMK-3. This electrocatalyst exhibits excellent performance towards ORR in alkaline media. The optimized nitrogen-doped mesoporous electrocatalyst show an onset potential (E onset) of 0.95 V (versus reversible hydrogen electrode (RHE)) and half-wave potential (E 1/2) of 0.83 V (versus RHE) in 0.1 M KOH. Furthermore, the as-prepared catalyst presents superior durability and methanol tolerance compared to commercial Pt/C indicating its potential applications in fuel cells and metal-air batteries.

Change of the work function and potential barrier transparency of W(100) and GaAs(110) single crystals during removing the inherent surface oxide layer

International Nuclear Information System (INIS)

Asalkhanov, Yu.I.; Saneev, Eh.L.

2002-01-01

Changes of current voltage characteristics of slow monoenergetic electron beam through the surfaces of W(100) and GaAs(100) single crystals have been measured in the process of surface oxide layers elimination. It is shown that work function is decreased and transparency coefficient of surface potential barrier is increased under increasing the temperature of vacuum annealing. Peculiarities of surface potential change under oxide layer elimination in metals and semiconductors are discussed [ru

Gallium arsenide injection lasers

International Nuclear Information System (INIS)

Thompson, G.H.B.

1975-01-01

The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

Energy Technology Data Exchange (ETDEWEB)

Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2013-11-01

We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jayavel, P.; Nakamura, S.; Koyama, T.; Hayakawa, Y.

2006-01-01

InAsSb ternary epilayers with arsenic composition of 0.5 have been grown on GaAs(001) substrates. Linear-graded and step-graded InAsSb buffer layers with an InSb layer have been used to relax lattice mismatch between the epilayer and substrate. X-ray diffraction results of the epilayers indicate that an enhancement in the peak intensity of the buffer layer samples is due to improved crystalline quality of the epilayers. We find that the growth technique of the buffer layer strongly influences the surface morphology and roughness of the epilayer. Hall effect measurements of the step-graded buffer layer samples show an order of magnitude higher electron mobility than the direct and linear-graded buffer layer samples. These results demonstrate that high crystalline quality and electron mobility of the InAs 0.5 Sb 0.5 ternary epilayers can be achieved by using the step-graded InAsSb buffer layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of reaction temperature on structure and fluorescence properties of nitrogen-doped carbon dots

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yi [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Chemistry and Chemical Engineering, Lyuliang University, Lyuliang 033001 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Wang, Yaling [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Feng, Xiaoting [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhang, Feng [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Yang, Yongzhen, E-mail: yyztyut@126.com [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Liu, Xuguang, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

2016-11-30

Highlights: • Nitrogen-doped carbon dots (NCDs) from ammonia solution and citric acid were synthesized at different temperatures. • Quantum yield (QY) of NCDs depends largely on the amount of fluorescent polymer chains (FPC), more FPC gives higher QY. • The law of QY of NCDs first increase and then decrease with the reaction temperature increased is found and explained. • Nitrogen doping plays significant role in getting increased UV–vis absorption and QY. - Abstract: To investigate the effect of reaction temperature and nitrogen doping on the structure and fluorescence properties of carbon dots (CDs), six kinds of nitrogen-doped CDs (NCDs) were synthesized at reaction temperatures of 120, 140, 160, 180, 200 and 220 °C, separately, by using citric acid as carbon source and ammonia solution as nitrogen source. Nitrogen-free CDs (N-free CDs-180) was also prepared at 180 °C by using citric acid as the only carbon source for comparison. Results show that reaction temperature has obvious effect on carbonization degree, quantum yield (QY), ultraviolet-visible (UV–vis) absorption and photoluminescence (PL) spectra but less effect on functional groups, nitrogen doping degree and fluorescence lifetime of NCDs. Compared with N-free CDs-180, NCDs-180 possesses enchanced QY and longer fluorescence lifetime. Doping nitrogen has obvious effect on UV–vis absorption and PL spectra but less effect on particles sizes and carbonization degree. The formation mechanism of NCDs is explored: QY of NCDs depends largely on the number of fluorescent polymer chains (FPC), the competition between FPC formation on the surface of NCDs and carbon core growth leads to the change in number of FPC, and consequently to the NCDs with highest QY at appropriate hydrothermal temperature.

Sn nanothreads in GaAs: experiment and simulation

Science.gov (United States)

Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

2016-12-01

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

N/S Co-doped Carbon Derived From Cotton as High Performance Anode Materials for Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Jiawen Xiong

2018-04-01

Full Text Available Highly porous carbon with large surface areas is prepared using cotton as carbon sources which derived from discard cotton balls. Subsequently, the sulfur-nitrogen co-doped carbon was obtained by heat treatment the carbon in presence of thiourea and evaluated as Lithium-ion batteries anode. Benefiting from the S, N co-doping, the obtained S, N co-doped carbon exhibits excellent electrochemical performance. As a result, the as-prepared S, N co-doped carbon can deliver a high reversible capacity of 1,101.1 mA h g−1 after 150 cycles at 0.2 A g−1, and a high capacity of 531.2 mA h g−1 can be observed even after 5,000 cycles at 10.0 A g−1. Moreover, excellently rate capability also can be observed, a high capacity of 689 mA h g−1 can be obtained at 5.0 A g−1. This superior lithium storage performance of S, N co-doped carbon make it as a promising low-cost and sustainable anode for high performance lithium ion batteries.

A new structure for comparing surface passivation materials of GaAs solar cells

Science.gov (United States)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

The investigation of alloy formation during InAs nanowires growth on GaAs (111)B substrate

Energy Technology Data Exchange (ETDEWEB)

Saqib, Muhammad; Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3, Siegen 57072 (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institute (PGI-9), Forschungzentrum Juelich, Juelich 52425 (Germany)

2013-07-01

A possible way to obtain nanowires is the growth in molecular beam epitaxy (MBE) on the (111) oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of two different series (etched and unetched) of NWs samples. Vertically aligned InAs nanowires (NWs) doped with Si were self-assisted grown by molecular beam epitaxy on GaAs [111]B substrates covered with a thin SiO{sub x} layer. Using a combination of symmetric and asymmetric X-ray diffraction we study the influence of Si supply on the growth process and nanostructure formation. We find that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, we observe the formation of a Ga{sub 0.2}In{sub 0.8}As alloy if the growth is performed on samples covered by a defective (etched) oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Gallium concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

Annealing of proton-damaged GaAs and 1/f noise

NARCIS (Netherlands)

Chen, X.Y.; Folter, de L.C.

1997-01-01

GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton

Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB2 superconductor nanomaterials

International Nuclear Information System (INIS)

Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan; Acar, Selcuk; Kokal, Ilkin; Häßler, Wolfgang

2015-01-01

Undoped and carbon-doped magnesium diboride (MgB 2 ) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB 2 samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp 3 -hybridized carbon radicals were detected. A strong reduction in the critical temperature T c was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra

Cobalt-Doped Carbon Gels as Electro-Catalysts for the Reduction of CO2 to Hydrocarbons

Directory of Open Access Journals (Sweden)

Abdalla Abdelwahab

2017-01-01

Full Text Available Two original series of carbon gels doped with different cobalt loadings and well-developed mesoporosity, aerogels and xerogels, have been prepared, exhaustively characterized, and tested as cathodes for the electro-catalytic reduction of CO2 to hydrocarbons at atmospheric pressure. Commercial cobalt and graphite sheets have also been tested as cathodes for comparison. All of the doped carbon gels catalyzed the formation of hydrocarbons, at least from type C1 to C4. The catalytic activity depends mainly on the metal loading, nevertheless, the adsorption of a part of the products in the porous structure of the carbon gel cannot be ruled out. Apparent faradaic efficiencies calculated with these developed materials were better that those obtained with a commercial cobalt sheet as a cathode, especially considering the much lower amount of cobalt contained in the Co-doped carbon gels. The cobalt-carbon phases formed in these types of doped carbon gels improve the selectivity to C3-C4 hydrocarbons formation, obtaining even more C3 hydrocarbons than CH4 in some cases.

Synthesis of Nickel-Encapsulated Carbon Nanocapsules and Cup-Stacked-Type Carbon Nanotubes via Nickel-Doped Fullerene Nanowhiskers

Directory of Open Access Journals (Sweden)

Tokushi Kizuka

2012-01-01

Full Text Available Nickel- (Ni doped C60 nanowhiskers (NWs were synthesized by a liquid-liquid interfacial precipitation method using a C60-saturated toluene solution and isopropanol with Ni nitrate hexahydrate Ni(NO32·6H2O. By varying the heating temperature of Ni-doped C60 NWs, two types of one-dimensional carbon nanostructures were produced. By heating the NWs at 973 and 1173 K, carbon nanocapsules (CNCs that encapsulated Ni nanoparticles were produced. The Ni-encapsulated CNCs joined one dimensionally to form chain structures. Upon heating the NWs to 1373 K, cup-stacked-type carbon nanotubes were synthesized.

Non-platinum nanocatalyst on porous nitrogen-doped carbon fabricated by cathodic vacuum arc plasma technique

Energy Technology Data Exchange (ETDEWEB)

Sirirak, Reungruthai [Material Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Chemistry and Center of Excellence for Innovation in Chemistry (PERCH-CIC), Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sarakonsri, Thapanee, E-mail: tsarakonsri@gmail.com [Material Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Chemistry and Center of Excellence for Innovation in Chemistry (PERCH-CIC), Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Medhesuwakul, Min [Plasma & Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2015-11-30

Highlights: • High surface area porous coral-like nitrogen-doped carbon (NC) and non-platinum nanocatalysts were fabricated on proton exchange membrane using the cathodic vacuum arc plasma (CVAP) technique. • It is a one-step catalysts preparation directly on nafion proton exchange membrane. This CVAP technique is the first new method that was applied in a polymer electrolyte membrane fuel cells (PEMFCs) catalysts preparation. • Due to these excellent characteristics of nitrogen-doped carbon, it is expected to exhibit a good catalyst supporter for PEMFC. • In addition, the Fe–NC catalysts fabricated via this CVAP technique are sphere-like nanoparticle and well disperse on coral-like NC film, which particularity exhibits that these prepared catalysts ought to be a good oxygen reduction reaction (ORR) catalyst for PEMFC. • This approach can be extended to the synthesis of other non-platinum ORR catalyst for broad range applications in energy conversion. - Abstract: Polymer electrolyte membrane fuel cells (PEMFCs) convert chemical energy directly into electrical energy where catalysts composing of non-noble transition metals, nitrogen, and carbon compounds are the most promising materials to replace the expensive platinum catalysts for oxygen reduction reaction (ORR). In this research, cathodic vacuum arc plasma (CVAP) technique was used to fabricate porous nitrogen doped carbon (NC) and non-platinum catalyst on porous NC (Fe–NC) directly on ion exchange membrane for being used as an ORR catalyst at the cathode. The porous NC layer was fabricated on silicon wafer at 0.05 mTorr, 0.1 mTorr, 0.5 mTorr, 1 mTorr, and 5 mTorr of nitrogen gas inlet. The AFM, and SEM images are observed to be regularly big with quite high hillocks and thin NC layers; these results indicate that the optimum process pressure of nitrogen gas inlet is 5 mTorr for porous NC fabrication. The SEM–EDS detects Fe, N, and C elements in the prepared catalysts, and the XRD pattern reviews

Non-platinum nanocatalyst on porous nitrogen-doped carbon fabricated by cathodic vacuum arc plasma technique

International Nuclear Information System (INIS)

Sirirak, Reungruthai; Sarakonsri, Thapanee; Medhesuwakul, Min

2015-01-01

Highlights: • High surface area porous coral-like nitrogen-doped carbon (NC) and non-platinum nanocatalysts were fabricated on proton exchange membrane using the cathodic vacuum arc plasma (CVAP) technique. • It is a one-step catalysts preparation directly on nafion proton exchange membrane. This CVAP technique is the first new method that was applied in a polymer electrolyte membrane fuel cells (PEMFCs) catalysts preparation. • Due to these excellent characteristics of nitrogen-doped carbon, it is expected to exhibit a good catalyst supporter for PEMFC. • In addition, the Fe–NC catalysts fabricated via this CVAP technique are sphere-like nanoparticle and well disperse on coral-like NC film, which particularity exhibits that these prepared catalysts ought to be a good oxygen reduction reaction (ORR) catalyst for PEMFC. • This approach can be extended to the synthesis of other non-platinum ORR catalyst for broad range applications in energy conversion. - Abstract: Polymer electrolyte membrane fuel cells (PEMFCs) convert chemical energy directly into electrical energy where catalysts composing of non-noble transition metals, nitrogen, and carbon compounds are the most promising materials to replace the expensive platinum catalysts for oxygen reduction reaction (ORR). In this research, cathodic vacuum arc plasma (CVAP) technique was used to fabricate porous nitrogen doped carbon (NC) and non-platinum catalyst on porous NC (Fe–NC) directly on ion exchange membrane for being used as an ORR catalyst at the cathode. The porous NC layer was fabricated on silicon wafer at 0.05 mTorr, 0.1 mTorr, 0.5 mTorr, 1 mTorr, and 5 mTorr of nitrogen gas inlet. The AFM, and SEM images are observed to be regularly big with quite high hillocks and thin NC layers; these results indicate that the optimum process pressure of nitrogen gas inlet is 5 mTorr for porous NC fabrication. The SEM–EDS detects Fe, N, and C elements in the prepared catalysts, and the XRD pattern reviews

Optical orientation of Mn{sup 2+} ions in GaAs

Energy Technology Data Exchange (ETDEWEB)

Langer, Lukas; Bayer, Manfred [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Akimov, Ilya A.; Yakovlev, Dmitri R. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Dzhioev, Roslan I.; Korenev, Vladimir L.; Kusrayev, Yuri G.; Sapega, Victor F. [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2011-07-01

We report on optical orientation of Mn{sup 2+} ions in bulk GaAs under application of weak longitudinal magnetic fields (B {<=}150 mT). The studied samples were grown by liquid phase epitaxy and Czochralski method and were doped with a low Mn acceptor concentration of 8 x 10{sup 18} cm{sup -3}. Time resolved measurements of circular polarization for donor-acceptor photoluminescence in Faraday geometry reveal nontrivial spin dynamics of donor localized electrons. Initially the degree of polarization of the electron spins is 40%. It then decays within some tens of ns to reach a plateau. The plateau is absent at B=0 T and saturates at B=150 mT reaching the value of 35%. It's sign changes with the helicity of incident light. It follows that the s-d exchange interaction with optically oriented electrons induces a steady state non-equilibrium polarization of the Mn{sup 2+} ions. The latter maintain their spin and return part of the polarization back to the electron spin system, resulting in the plateau. This provides a long-lived electron spin memory in GaAs doped with Mn. The dynamical polarization of ionized Mn acceptors was also directly monitored using spin flip Raman scattering spectroscopy, in agreement with time-resolved data.

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

2014-01-01

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

2014-09-01

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Chroneos, A.; Londos, C. A.; Sgourou, E. N.

2011-01-01

Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Science.gov (United States)

Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

2017-12-01

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

Periodic nanostructures fabricated on GaAs surface by UV pulsed laser interference

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Huo, Dayun; Guo, Xiaoxiang; Rong, Chen; Shi, Zhenwu, E-mail: zwshi@suda.edu.cn; Peng, Changsi, E-mail: changsipeng@suda.edu.cn

2016-01-01

Graphical abstract: - Highlights: • Periodic nanostructures were fabricated on GaAs wafers by four-beam laser interference patterning which have potential applications in many fields. • Significant different results were obtained on epi-ready and homo-epitaxial GaAs substrate surfaces. • Two-pulse patterning was carried out on homo-epitaxial GaAs substrate, a noticeable morphology transformation induced by the second pulse was observed. • Temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations. The calculation agrees well with the experiment results. - Abstract: In this paper, periodic nanostructures were fabricated on GaAs wafers by four-beam UV pulsed laser interference patterning. Significant different results were observed on epi-ready and homo-epitaxial GaAs substrate surfaces, which suggests GaAs oxide layer has an important effect on pulsed laser irradiation process. In the case of two-pulse patterning, a noticeable morphology transformation induced by the second pulse was observed on homo-epitaxial GaAs substrate. Based on photo-thermal mode, temperature distribution on sample surface as a function of time and position was calculated by solving the heat diffusion equations.

Study of carbon-doped micro and nano sized alumina for radiation dosimetry applications

International Nuclear Information System (INIS)

Fontainha, C. C. P.; Alves, N.; Ferraz, W. B.; Faria, L. O.

2017-10-01

New materials have been widely investigated for ionizing radiation dosimetry for medical procedures. Carbon-doped doped alumina (Al 2 O 3 :C) have been proposed as thermoluminescent and photo luminescent dosimeters. In the present study nano and micro-sized alumina doped with different percentages of carbon, sintered under different atmosphere conditions, at temperatures ranging from 1300 to 1750 degrees Celsius, were sintered and their dosimetric characteristics for gamma fields were investigated. Among the investigated sample preparation methods, the micro-sized alumina doped with 0.01% of carbon and sintered at 1700 degrees Celsius under reducing atmosphere has presented the best Tl output, comparable to the best Tl sensitivities ever reported to alumina and better efficiency than the nano-sized alumina synthesized in this study. The influence of humidity in the Tl signal has been evaluated to be -4.0%. The micro-sized alumina obtained by the methodology used in this work is a suitable candidate for application in X and gamma radiation dosimetry. (Author)

Engineering iodine-doped carbon dots as dual-modal probes for fluorescence and X-ray CT imaging.

Science.gov (United States)

Zhang, Miaomiao; Ju, Huixiang; Zhang, Li; Sun, Mingzhong; Zhou, Zhongwei; Dai, Zhenyu; Zhang, Lirong; Gong, Aihua; Wu, Chaoyao; Du, Fengyi

2015-01-01

X-ray computed tomography (CT) is the most commonly used imaging technique for noninvasive diagnosis of disease. In order to improve tissue specificity and prevent adverse effects, we report the design and synthesis of iodine-doped carbon dots (I-doped CDs) as efficient CT contrast agents and fluorescence probe by a facile bottom-up hydrothermal carbonization process. The as-prepared I-doped CDs are monodispersed spherical nanoparticles (a diameter of ~2.7 nm) with favorable dispersibility and colloidal stability in water. The aqueous solution of I-doped CDs showed wavelength-dependent excitation and stable photoluminescence similar to traditional carbon quantum dots. Importantly, I-doped CDs displayed superior X-ray attenuation properties in vitro and excellent biocompatibility. After intravenous injection, I-doped CDs were distributed throughout the body and excreted by renal clearance. These findings validated that I-doped CDs with high X-ray attenuation potency and favorable photoluminescence show great promise for biomedical research and disease diagnosis.

Nitrogen-doped graphene by microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

2013-01-01

Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

Nitrogen-doped graphene by microwave plasma chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

2013-01-01

Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

The nature of holes in carbon doped titania

International Nuclear Information System (INIS)

Rabani, J.

2009-01-01

Complete text of publication follows. It is well known that semiconductors (SC) produce conduction band electrons and valence band holes upon band gap excitation. The mobile species become quickly trapped at the surface. The most popular semiconductor is titanium dioxide, where the reactive surface holes (h T + ) have been recently identified as surface -O ·- (or - · OH depending on pH) covalently linked to Ti atoms. Most organic compounds are oxidized by the holes. These holes react similarly to · OH radicals and hence there is some resemblance between the photochemistry of TiO 2 and radiolysis, although in the case of TiO 2 the reactions take place on the surface. Titanium dioxide has many favorable properties for application as a photocatalyst for decontamination of water from organic materials, but is lacking absorption in the visible range, where photons are relatively cheap. In addition the quantum yield of reaction with solutes in water is too low under conditions required by industrial water treatment due to the competition between electron-hole recombination and localization at the surface. The discovery that doping of TiO 2 leads to extension of the photoactive region from UV to visible light has remarkably increased the interest in such doped TiO 2 , and a large number of materials have been developed on the basis of this strategy. We'll focus on carbon doped TiO 2 where the visible photoactivity is attributed to introduction of intragap localized carbon states or organic segments. Visible photolysis of aerated carbon doped TiO 2 (C-TiO 2 ) aqueous suspensions induces oxidation of the model compound used, namely methanol. The effects of absorbed light density, added hydrogen peroxide and added catalase on the rate of HCHO formation have been studied. The mechanism has been shown to involve oxidation of CH 3 OH by surface trapped holes, although these holes have lower energy than those formed upon UV photolysis of undoped TiO 2 . The C-TiO 2 electrons

Azobenzene mesogens mediated preparation of SnS nanocrystals encapsulated with in-situ N-doped carbon and their enhanced electrochemical performance for lithium ion batteries application

International Nuclear Information System (INIS)

Wang Meng; Zhou Yang; Chen Dongzhong; Duan Junfei

2016-01-01

In this work, azobenzene mesogen-containing tin thiolates have been synthesized, which possess ordered lamellar structures persistent to higher temperature and serve as liquid crystalline precursors. Based on the preorganized tin thiolate precursors, SnS nanocrystals encapsulated with in-situ N-doped carbon layer have been achieved through a simple solventless pyrolysis process with the azobenzene mesogenic thiolate precursor served as Sn, S, N, and C sources simultaneously. Thus prepared nanocomposite materials as anode of lithium ion batteries present a large specific capacity of 604.6 mAh·g −1 at a current density of 100 mA·g −1 , keeping a high capacity retention up to 96% after 80 cycles, and display high rate capability due to the synergistic effect of well-dispersed SnS nanocrystals and N-doped carbon layer. Such encouraging results shed a light on the controlled preparation of advanced nanocomposites based on liquid crystalline metallomesogen precursors and may boost their novel intriguing applications. (special topic)

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

Electrochemical properties of porous carbon black layer as an electron injector into iodide redox couple

International Nuclear Information System (INIS)

Kim, Jung-Min; Rhee, Shi-Woo

2012-01-01

Highlights: ► Carbon black (CB) porous layer for triiodide (I 3 − ) ion reduction is coated with spray coating method at 120 °C on the fluorine-doped tin oxide glass. ► The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. ► Decreased particle size and increased thickness improve the catalytic activity because of the increase in the surface area and the conductivity of the CB layer. - Abstract: Electrochemical properties of carbon black (CB) porous layer as a counter electrode in dye-sensitized solar cells (DSC) are studied. CB electrode for triiodide (I 3 − ) ion reduction is coated with spray coating method on the fluorine-doped tin oxide glass at 120 °C. The CB particle size is varied from 20 nm to 90 nm and the CB electrode thickness is controlled from 1 μm to 9 μm by controlling the spraying time. The electrochemical impedance spectroscopy is analyzed for a symmetric cell and a new circuit model is applied to identify electrochemical parameters. As the CB particle size is decreased, the catalytic activity is improved because of the increase in the surface area and the conductivity of the CB layer. Increased CB electrode thickness also improves the catalytic activity and leads to the low charge transfer resistance at the electrolyte/CB electrode interface. The CB counter electrode with the particle size of 20 nm and the thickness of 9 μm for DSC shows the energy conversion efficiency of 7.2% with the highest fill factor (FF) of 65.6%, which is similar to the Pt counter electrode with FF of 65.8% and the efficiency of 7.6%.

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

International Nuclear Information System (INIS)

He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

International Nuclear Information System (INIS)

Desalvo, G.C.; Mueller, E.H.; Barnett, A.M.

1985-01-01

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency

Diffusion in Intrinsic and Highly Doped III-V Semiconductors

CERN Multimedia

Stolwijk, N

2002-01-01

%title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Improved Electrochemical Performance of LiFePO4@N-Doped Carbon Nanocomposites Using Polybenzoxazine as Nitrogen and Carbon Sources.

Science.gov (United States)

Wang, Ping; Zhang, Geng; Li, Zhichen; Sheng, Wangjian; Zhang, Yichi; Gu, Jiangjiang; Zheng, Xinsheng; Cao, Feifei

2016-10-03

Polybenzoxazine is used as a novel carbon and nitrogen source for coating LiFePO 4 to obtain LiFePO 4 @nitrogen-doped carbon (LFP@NC) nanocomposites. The nitrogen-doped graphene-like carbon that is in situ coated on nanometer-sized LiFePO 4 particles can effectively enhance the electrical conductivity and provide fast Li + transport paths. When used as a cathode material for lithium-ion batteries, the LFP@NC nanocomposite (88.4 wt % of LiFePO 4 ) exhibits a favorable rate performance and stable cycling performance.

The role of proximity caps during the annealing of UV-ozone oxidized GaAs

International Nuclear Information System (INIS)

Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

2007-01-01

This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films

High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

2014-03-03

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

Palladium on Nitrogen-Doped Mesoporous Carbon: A Bifunctional Catalyst for Formate-Based, Carbon-Neutral Hydrogen Storage.

Science.gov (United States)

Wang, Fanan; Xu, Jinming; Shao, Xianzhao; Su, Xiong; Huang, Yanqiang; Zhang, Tao

2016-02-08

The lack of safe, efficient, and economical hydrogen storage technologies is a hindrance to the realization of the hydrogen economy. Reported herein is a reversible formate-based carbon-neutral hydrogen storage system that is established over a novel catalyst comprising palladium nanoparticles supported on nitrogen-doped mesoporous carbon. The support was fabricated by a hard template method and nitridated under a flow of ammonia. Detailed analyses demonstrate that this bicarbonate/formate redox equilibrium is promoted by the cooperative role of the doped nitrogen functionalities and the well-dispersed, electron-enriched palladium nanoparticles. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Del Río-De Santiago, A.; Méndez-García, V.H. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Martínez-Velis, I.; Casallas-Moreno, Y.L. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); López-Luna, E. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Yu Gorbatchev, A. [IICO-UASLP, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P. 78210, México (Mexico); López-López, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); Cruz-Hernández, E., E-mail: esteban.cruz@uaslp.mx [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico)

2015-04-01

Highlights: • The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is found the formation of nanogrooves, nanoleaves, and nanowires. • It is shown the progressive photoluminescence transitions from purely GaAsMn zinc blende (for Mn% = 0.01) to a mixture of zinc blende and wurtzite GaAsMn (for Mn% = 0.2). • A critical thickness for the Mn catalyst effect was determined by RHEED. - Abstract: In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples is strongly influenced and changes from planar to corrugated for Mn% values from 0.01 to 0.05, corresponding to nanostructures on the surface with dimensions of 200–300 nm and with the shape of leave, to nanowire-like structures for Mn% values above 0.05. From reflection high-energy electron diffraction patterns, we observed the growth mode transition from two- to three-dimensional occurring at a Mn% exceeding 0.05. The optical and electrical properties were obtained from photoluminescence (PL) and Hall effect measurements, respectively. For the higher Mn concentration, besides the Mn related transitions at approximately 1.41 eV, PL spectra sharp peaks are present between 1.43 and 1.49 eV, which we related to the coexistence of zinc blende and wurtzite phases in the nanowire-like structures of this sample. At Mn% of 0.04, an increase of the carrier mobility up to a value of 1.1 × 10{sup 3} cm{sup 2}/Vs at 77 K was found, then decreases as Mn% is further increased due to the strengthening of the ionized impurity scattering.

Electrospark doping of steel with tungsten

International Nuclear Information System (INIS)

Denisova, Yulia; Shugurov, Vladimir; Petrikova, Elizaveta; Seksenalina, Malika; Ivanova, Olga; Ikonnikova, Irina; Kunitsyna, Tatyana; Vlasov, Victor; Klopotov, Anatoliy; Ivanov, Yuriy

2016-01-01

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties

Electrospark doping of steel with tungsten

Energy Technology Data Exchange (ETDEWEB)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Seksenalina, Malika, E-mail: sportmiss@bk.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irinaikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Kunitsyna, Tatyana, E-mail: kma11061990@mail.ru; Vlasov, Victor, E-mail: rector@tsuab.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Klopotov, Anatoliy, E-mail: klopotovaa@tsuab.ru [National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Ivanov, Yuriy, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation)

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.

Investigations on liquid phase electroepitaxial growth kinetics of GaAs

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2004-01-01

This paper presents a model based on solving a two-dimensional diffusion equation incorporating the electromigration effect by numerical simulation method corresponding to liquid phase electroepitaxial (LPEE) growth of GaAs, whose growth is limited by diffusion and electro migration of solute species. Using the numerical simulation method, the concentration profiles of As in Ga rich solution during the electroepitaxial growth of GaAs have been constructed in front of the growing crystal interface. Using the concentration gradient at the interface, the growth rate and thickness of the epitaxial layer of GaAs have been determined for different experimental growth conditions. The proposed model is based on the assumption that there is no convection in the solution. The results are discussed in detail

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

Science.gov (United States)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

MECHANICAL PROPERTIES OF CR-DLC LAYERS PREPARED BY HYBRID LASER TECHNOLOGY

Directory of Open Access Journals (Sweden)

Petr Písařík

2017-06-01

Full Text Available Diamond like carbon (DLC layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys. The adhesion can be improved by doping the DLC layer by chromium, as described in this article. Chromium doped diamond like carbon layers (Cr‑DLC were deposited by hybrid deposition system using KrF excimer laser and magnetron sputtering. Carbon and chromium contents were determined by wavelength dispersive X-ray spectroscopy. Mechanical properties were studied by nanoindentation. Hardness and reduced Young's modulus reached 31.2 GPa and 271.5 GPa, respectively. Films adhesion was determined by scratch test and reached 19 N for titanium substrates. Good adhesion to biomedical alloys and high DLC hardness will help to progress in the field of implantology.

A polarized photoluminescence study of strained layer GaAs photocathodes

International Nuclear Information System (INIS)

Mair, R.A.

1996-07-01

Photoluminescence measurements have been made on a set of epitaxially grown strained GaAs photocathode structures. The photocathodes are designed to exhibit a strain-induced enhancement of the electron spin polarization obtainable by optical pumping with circularly polarized radiation of near band gap energy. For the case of non-strained GaAs, the degree of spin polarization is limited to 50% by crystal symmetry. Under an appropriate uniaxial compression or tension, however, the valence band structure near the gap minimum is modified such that a spin polarization of 100% is theoretically possible. A total of nine samples with biaxial compressive strains ranging from zero to ∼0.8% are studied. X-ray diffraction analysis, utilizing Bragg reflections, is used to determine the crystal lattice structure of the samples. Luminescence spectra and luminescence circular polarization data are obtained at room temperature, ∼78 K and ∼12 K. The degree of luminescence circular polarization is used as a relative measure of the photo-excited electron spin polarization. The room temperature luminescence circular polarization data is compared with the measured electron spin polarization when the samples are used as electron photo-emitters with a negative electron affinity surface preparation. The luminescence data is also analyzed in conjunction with the crystal structure data with the goal of understanding the strain dependent valence band structure, optical pumping characteristics and spin depolarization mechanisms of the photocathode structures. A simple model is used to describe the luminescence data, obtained for the set of samples. Within the assumptions of the model, the deformation potentials a, b and d for GaAs are determined. The measured values are a = -10.16±.21 eV, b = -2.00±.05 eV and d = -4.87±.29 eV. Good agreement with published values of the deformation potentials provides support for the model used to describe the data

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

Science.gov (United States)