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Sample records for carbon nitride films

  1. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    OpenAIRE

    Hernández-Torres, J.; Gutierrez-Franco, A.; P. G. González; L. García-González; Hernandez-Quiroz, T.; Zamora-Peredo, L.; V.H. Méndez-García; A. Cisneros-de la Rosa

    2016-01-01

    Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the ...

  2. Preparation of carbon-nitride bulk samples in the presence of seed carbon-nitride films

    International Nuclear Information System (INIS)

    A procedure was developed for preparing bulk carbon-nitride crystals from polymeric α-C3N4.2 at high pressure and high temperature in the presence of seeds of crystalline carbon-nitride films prepared by using a high-voltage discharge plasma combined with pulsed laser ablation of a graphite target. The samples were evaluated by using X-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrated that the nitrogen composition in the α-C3N4.2 material, which initially contained more than 58 % nitrogen, decreased during the annealing process and reached a common, stable composition of ∼ 45 %. The thermobaric experiments were performed at 10 - 77 kbar and 350 - 1200 .deg. C.

  3. Observation of high stressed hydrogenated carbon nitride films by SLEEM

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Müllerová, Ilona; Sobota, Jaroslav

    Brno : Institute of Scientific Instruments AS CR, v.v.i, 2012 - (Mika, F.), s. 43-44 ISBN 978-80-87441-07-7. [International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /13./. Skalský dvůr (CZ), 25.06.2012-29.06.2012] Institutional support: RVO:68081731 Keywords : SLEEM * hydrogenated carbon nitride films Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  4. Humidity resistant hydrogenated carbon nitride films

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Polčák, J.; Sobota, Jaroslav; Müllerová, Ilona; Peřina, Vratislav; Caha, O.

    2013-01-01

    Roč. 275, 15 June (2013), s. 7-13. ISSN 0169-4332 R&D Projects: GA MŠk ED0017/01/01 Institutional support: RVO:68081731 ; RVO:61389005 Keywords : thin films * corrosion behanior * delamination * stress Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BH - Optics, Masers, Lasers (UJF-V) Impact factor: 2.538, year: 2013

  5. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  6. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    Directory of Open Access Journals (Sweden)

    J. Hernández-Torres

    2016-01-01

    Full Text Available Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with CNx films located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant D band. ID/IG ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.

  7. Field Emission from Amorphous carbon Nitride Films Deposited on silicon Tip Arrays

    Institute of Scientific and Technical Information of China (English)

    李俊杰; 郑伟涛; 孙龙; 卞海蛟; 金曾孙; 赵海峰; 宋航; 孟松鹤; 赫晓东; 韩杰才

    2003-01-01

    Amorphous carbon nitride films (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function ( F = 0.024 eV)of electron field emission than that on silicon wafer ( F = 0.060 e V), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.

  8. Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

    International Nuclear Information System (INIS)

    High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp3 bonds is significant. 15 refs., 5 figs

  9. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  10. Cross-sectional STEM study of cathodic arc deposited amorphous carbon and carbon-nitride films

    International Nuclear Information System (INIS)

    Full text: The VG601 high resolution dedicated Scanning Transmission Electron Microscope (STEM) located at the University of Sydney has the capability of providing structural information with a spatial resolution of less than one nanometre. Compositional information can be obtained using either Energy Dispersive Spectroscopy (EDS) or Electron Energy Loss Spectroscopy. Each characteristic absorption edge in EELS also exhibits structure which provides information on the atomic environment of the absorbing atom. The combination of EELS and STEM therefore provides a powerful tool for analysing structure at the nanometre scale. In this work we investigate the structure of cathodic arc deposited carbon and carbon-nitride films using this EELS/STEM combination. By preparing the films in cross-section and collecting a number of spectra in a line through the film thickness (line profile), it is possible to investigate the deposition process in great detail since variations in structure with depth in the film provide information on the 'history' of film growth. In the case of carbon based materials, this technique provides a direct measure of the variations in both density and proportion of diamond-like bonding. These measurements will be used to help understand the mechanisms of film growth by cathodic arc deposition

  11. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  12. Improvement of orthodontic friction by coating archwire with carbon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Wei Songbo [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shao Tianmin, E-mail: shaotm@mail.tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Ding Peng [Department of Orthodontics, Peking University School and Hospital of Stomatology, Beijing 100081 (China)

    2011-10-01

    In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp{sup 2} carbon dominated structures, and diversiform bonds (N-C, N{identical_to}C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp{sup 2}C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

  13. Improvement of orthodontic friction by coating archwire with carbon nitride film

    International Nuclear Information System (INIS)

    In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp2 carbon dominated structures, and diversiform bonds (N-C, N≡C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp2C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

  14. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  15. Interface study between nanostructured tantalum nitride films and carbon nanotubes grown by chemical vapour deposition

    International Nuclear Information System (INIS)

    Highlights: • Our paper deals with the understanding of the carbon nanotubes growth parameters following the use of specific thin nitride buffer films. • For a large choice of buffer, we use ultra thin films elaborated by the very new method: high power pulsed magnetron sputtering; it allows a larger nitrogen incorporation in the films and lead to out of equilibrium phase formation. • Then by a multiscale investigation, developing a structural, a chemical and a morphology approach, we lead to some conclusion on the correlation between the phase transition for the buffer and morphology transition for the CNTs. • That is a new and deep approach. - Abstract: We present the role of nitrogen content in tantalum nitride ultra-thin buffers, on the carbon nanotubes (CNTs) growth by chemical vapour deposition at 850 °C, assisted by ferrocene as catalyst source. Tantalum nitride (TaNx) films with a very large range of concentration x = [0, 1.8] and various nanostructures, from amorphous Ta(N) to Ta3N5, were deposited by Highly Pulsed Plasma Magnetron Sputtering. The buffer films are characterized after heat treatment at 850 °C, and after the CNT growth, by wide angle X-ray scattering in grazing incidence and scanning electron microscopy. The CNT diameter explored by transition electron microscopy shows an all-out value for under stoichiometric thin films (Ta1-N1−δ, Ta3-N5−δ) and a minimum value just above the stoichiometric phases (Ta1-N1+δ, Ta3-N5+δ). Firstly one shows that the buffer films under the heat treatment present surface modification highly dependent on their initial state, which influences the catalyst particles diffusion. Secondly at the stoichiometric TaN phase we show that a specific ternary phase FeTa2O6 is formed at the interface CNT/buffer, not present in the other cases, leading to a special CNT growth condition

  16. High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

    International Nuclear Information System (INIS)

    Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B4C target in an Ar/N2 gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V

  17. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  18. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp2 and sp3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  19. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

    Directory of Open Access Journals (Sweden)

    Shaestagir Chowdhury

    2008-04-01

    Full Text Available An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET, temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.

  20. Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) thin films have been grown on Si by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N2 plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C+ ions, C atoms, C2, N2; and CN radicals, and N2+ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the 'four-probe-test method' determining sheet resistivity and correlating surface conductivity with chemical composition.

  1. The investigation of carbon nitride films prepared at various arc currents by vacuum cathode arc method

    International Nuclear Information System (INIS)

    The carbon nitride films have been prepared in the arc currents range of 20-60 A at the Ar/N2 atmosphere of 50/400 sccm by the vacuum cathode arc deposition method. The properties of the films were characterized by x-ray photoelectron spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. The N concentration showed a maximum of 35 at% at 20 A and decreased gradually with the arc currents. The films below 40 A consisted of linear polymeric-like component and sp2 graphitic cluster. With the increasing of the arc current from 20 to 40 A, the ID/IG rose and the photoluminescence (PL) fell gradually, which resulted from the development of the sp2 graphitic phase and the decrease of the polymeric-like phase. As a result, the CC bonds increased and sp3CN and sp2CN decreased. Above 40 A, with the increasing of arc currents, ID/IG fell and the PL increased gradually, which reflected the decreasing of sp2 graphitic phase and the modification of C and N atoms in sp2 cluster. The CC bonds and sp3CN fell and the sp2CN rose. The nanohardness of films showed increasing tendency with the arc currents. The variation of the relative ratio and the average energy of N-containing species and C-containing species at the atmosphere would be responsible for the change in the properties of films. (author)

  2. Effects of applied radio frequency power on low-temperature catalytic-free nanostructured carbon nitride films by rf PECVD

    Science.gov (United States)

    Ritikos, Richard; Othman, Maisara; Abdul Rahman, Saadah

    2016-06-01

    Low-temperature catalytic-free carbon nitride, CN x nanostructured thin films were produced by using radio frequency (rf) plasma-enhanced chemical vapor deposition employing a parallel-plate electrode configuration. The effects of varying applied rf power, P rf (30-100 W), on the formation of these structures were studied. Aligned nanostructured CN x films were produced at P rf as low as 40 W, but uniform highly vertical-aligned CN x nanorods were produced at P rf of 60 and 80 W. This was induced by the presence of high ion bombardment on the growing films and the preferential bonding of isonitrile to aromatic bonds in the nanostructures. It was also observed that nitrogen incorporation is highest in this range and the structure and bonding in the nanostructure reflects those of typical polymeric/amorphous carbon nitride films.

  3. Chemical bonding in hard and elastic amorphous carbon-nitride films

    Science.gov (United States)

    Gammon, Wesley Jason

    In this study, the chemical bonding in hard and elastic amorphous carbon nitride (a-CNx) films is investigated with x-ray photoelectron spectroscopy (XPS) and 15N, 13C, and 1H nuclear magnetic resonance (NMR) spectroscopy. The films were deposited by DC Magnetron sputtering in a pure nitrogen discharge on Si(001) substrates at 300--400°C. Nanoindentation measurements reveal an elastic modulus of ˜50 GPa and a hardness of ˜5 GPa, thus confirming our films are highly elastic but resist plastic deformation. Our 13C NMR study demonstrates the absence of sp 3-bonded carbon in this material. Collectively, our N(1s) XPS, 13C NMR, and 15N NMR data suggest a film-bonding model that has an aromatic carbon structure with sp2-hybridized nitrogen incorporated in heterocyclic rings. We demonstrate that the nitrogen bonding is predominantly in configurations similar to those in pyridine and pyrrole. In addition, the data indicate that the a-CNx films prepared for this study have low hydrogen content, but are hydrophilic. Specifically, results from 15N and 13C cross polarization (CP) and 1H magic angle spinning (MAS) NMR experiments suggest that nitrogen sites are susceptible to protonation from water absorbed during sample preparation for the NMR experiments. The sensitivity of the surface of a-CNx to water absorption may impact tribological applications for this material. In accord with our XPS and NMR spectroscopic studies on a-CN x films, we propose a film-structure model consisting of buckled graphitic planes that are cross-linked together by sp2 hybridized carbons. The curvature and cross-linking is attributed to a type of compound defect, which is formed by placing a pentagon next to single-atom vacancy in a graphite layer. Our proposed film structure is called the pentagon-with-vacancy-defect (5VD) model. Using Hartree-Fock calculations, we show that the 5VD, film-structure model is compatible with our XPS, NMR, and nanoindentation measurements and with previous

  4. The effect of nitrogen incorporation on the bonding structure of hydrogenated carbon nitride films

    International Nuclear Information System (INIS)

    This work describes the composition and bonding structure of hydrogenated carbon nitride (a-CNx:H) films synthesized by electron cyclotron resonance chemical vapor deposition using as precursor gases argon, methane, and nitrogen. The composition of the films was derived from Rutherford backscattering and elastic recoil detection analysis and the bonding structure was examined by infrared (IR) spectroscopy and x-ray absorption near edge spectroscopy (XANES). By varying the nitrogen to methane ratio in the applied gas mixture, polymeric a-CNx:H films with N/C contents varying from 0.06 to 0.49 were obtained. Remarkably, the H content of the films (∼40 at. %) was rather unaffected by the nitrogenation process. The different bonding states as detected in the measured XANES C(1s) and N(1s) spectra have been correlated with those of a large number of reference samples. The XANES and IR spectroscopy results indicate that N atoms are efficiently incorporated into the amorphous carbon network and can be found in different bonding environments, such as pyridinelike, graphitelike, nitrilelike, and amino groups. The nitrogenation of the films results in the formation of N-H bonding environments at the cost of C-H structures. Also, the insertion of N induces a higher fraction of double bonds in the structure at the expense of the linear polymerlike chains, hence resulting in a more cross-linked solid. The formation of double bonds takes place through complex C=N structures and not by formation of graphitic aromatic rings. Also, the mechanical and tribological properties (hardness, friction, and wear) of the films have been studied as a function of the nitrogen content. Despite the major modifications in the bonding structure with nitrogen uptake, no significant changes in these properties are observed

  5. ERDA characterization of carbon nitride films deposited by hollow cathode discharge process

    International Nuclear Information System (INIS)

    The interest in carbon nitride (CN) thin films stems from the theoretical work of Liu and Cohen predicting the extreme hardness of this material, comparable to or greater than that of diamond. The growth of CN thin films employing various deposition techniques such as plasma chemical vapor deposition, sputtering, laser ablation, ion assisted dynamic mixing and low energy ion implantation has been reported. This contribution presents some results about the characterization of CNx films using elastic recoil detection analysis (ERDA) technique. CN films were deposited on silicon substrates by electron beam evaporation of pure graphite in a nitrogen environment. A hollow cathode discharge in arc regime was used both for evaporating a graphite target and for generating a high density plasma in the vicinity of the substrate. The main deposition parameters were as follows: gas (N2) pressure, 10-2 - 5.10-2 mbar; hollow cathode discharge power, 2.5 - 5 kW; substrate negative bias voltage, 0-150 V; graphite evaporation rate, 0.08 - 0.2 g/min; deposition duration, 15-60 min. The ERDA measurements were carried out at the Tandem accelerator of IFIN-HH using a 63Cu10+ beam at 80 MeV. The samples were mounted in a scattering target chamber with a vacuum higher than 5 x 10-5 Torr. The detector consisted in a compact ΔE(gas)-E(solid) telescope, placed at 30 angle with respect to the beam. The elements of the main interests were C and N. The measured Δ E -E spectra for two samples prepared in different conditions are presented. A quantitative analysis of the C and N energy spectra using our program SURFAN have been carried out for the these samples. It shows that the nitrogen to carbon atomic concentration ratio is close to 0.3. The nitrogen content is lower than that expected for the ideal β - C3N4 solid. (authors)

  6. Effect of pressure on the deposition of hydrogen-free amorphous carbon and carbon nitride films by the pulsed cathodic arc discharge method

    International Nuclear Information System (INIS)

    Hydrogen-free amorphous carbon (a-C) and carbon nitride (a-C:N) films were deposited using the pulsed cathodic arc discharge at different argon and nitrogen pressures. The surface and mechanical properties of these films were found to strongly depend on the gas pressure. The tetrahedral amorphous carbon and hard a-C:N films with smooth surfaces (rms roughness: 0.15 nm) were prepared at lower gas pressures (-2 Pa). Incorporation of an increasing amount of nitrogen in a-C:N films caused a decrease in film hardness. All the films were covered with the thin (0.3-2 nm) graphite-like surface layers. The film hardness was correlated to the soft surface layer thickness, and the films with thinner surface layers exhibit higher hardness. The mean energies of pulsed plasma beams were measured as the functions of argon and nitrogen pressures. The mean energies of plasma beams decrease in an exponential fashion with increasing gas pressure due to the carbon ion collisions with the neutral gas species. The effects of mean energies of deposited species on the film deposition were explained in terms of the thermal spike migration of surface atoms. The formation of graphite-like surface layers is associated with the low-energy deposition process. The low-energy (10 eV) species may produce the strong thermal spike at film surface, and contribute to the formation of sp3 bonded structure at a sp3 bonded matrix

  7. Residual stresses and mechanical properties of amorphous carbon films on 40 CAD 6-12 plasma nitrided steel

    International Nuclear Information System (INIS)

    Full text.An investigation has been carried out to study the effect of deposition time and benzene flow rate on residual stresses level, morphological, hardness, adhesion strength and friction coefficient of carbon films. Amorphous hydrogenated carbon a-c:H films were deposited on plasma nitrided layers (ε+γ') of 40 CAD 6-12 steel substrate using Microwave Electron Cyclotron Resonance Plasma Assisted Chemical Vapour Deposition nethod with benzene/Argon gas as precursor. The coatings have been deposited at different temperatures 350 and 520 degree celsius for times 3,5,60 and 120 minutes under different pressures ranging from 10-3 to 10-5 mbar. A wide range of thickness values of the amorphous carbon layers (0.4 up 15 μm) was formed as function of the deposition conditions and precursors, when the bias voltage (-200V) and microwave power (300 W) were kept constant. Stress behavior in carbon films has been investigated by x-ray diffraction measurement using the sin2Ψ technique. The type and the value of stress have shown a strong dependence of film thickness and the benzene flow rate (σ= -259 ÷ 5 MPa). Scratch tests revealed that they possess excellent adhesion strength and exhibit both low values of friction coefficient and roughness. The has been concluded than the micro hardness measurements results are not influenced by the coating thickness. The hardness of the coatings is normally below 30 GPa for coatings with 7 sccm of benzene flow rate. The carbon films were characterized by SEM and Raman spectroscopy

  8. Tribological properties of ion beam deposited diamond-like carbon film on silicon nitride

    International Nuclear Information System (INIS)

    The present article reports on the physical characterization and tribological properties of diamond-like carbon (DLC) films deposited on structural Si3N4 substrates. The films were deposited by the direct ion beam deposition technique. The ion beam was produced by plasma discharge of pre-mixed methane and hydrogen gas in a Kaufman-type ion source. The deposited films were found to be amorphous and contained about 70% carbon and 30% hydrogen. The friction coefficient of an uncoated Si3N4 ball on a DLC coated Si3N4 disc starts at about 0.2, then decreases rapidly to 0.1-0.15 with increasing sliding distance. Increasing humidity results in a slight increase in friction coefficient, but a significant decrease in wear factor. The wear factor for the tests at ≅60% rh (relative humidity) are about an order of magnitude smaller than the tests at 3% rh. (orig.)

  9. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  10. Influence of the power on the processes controlling the formation of ECR-CVD carbon nitride films from CH{sub 4}/Ar/N{sub 2} plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Camero, M [Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid (Spain); Gordillo-Vazquez, F J [Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Ortiz, J [Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid (Spain); Gomez-Aleixandre, C [Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Madrid (Spain)

    2004-02-01

    Carbon nitride films have been synthesized by means of electron cyclotron resonance chemical vapour deposition (ECR-CVD) using different power values (50-212 W) at constant pressure conditions (0.03 mbar). Optical emission spectroscopy and mass spectrometry were used for the characterization of the plasma. The films were analysed using energy dispersive x-ray spectroscopies. It was found that all signal peaks in the optical emission spectra increased monotonically following the increase in microwave power. Moreover, we have observed that the radiative emission from the 4p({sup 2}p{sub 9}) resonant state of Ar is the most affected by CH{sub 4} addition to a pure argon plasma. The latter suggests that a Penning mechanism controls the activation of CH{sub 4} molecules with increasing power levels at relatively low pressures. Besides, the increase of excited N atoms indicates a higher activity of the etching mechanisms of carbon nitride films with increasing power.

  11. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

    2000-07-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  12. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Achete, C. A.

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  13. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  14. Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N2+H2 Atmosphere

    Institute of Scientific and Technical Information of China (English)

    YU Wei; WANG Shufang; ZHANG Lianshui; LI Xiaowei; FU Guangsheng

    2001-01-01

    Carbon nitride thin films are deposited on silicon wafers by 532 nm Nd∶YAG laser ablation of graphite in the N2+H2 atmosphere assisted by a dc glow discharge plasma at a higher gas pressure of about 4.0 kPa. The properties of the thin films are investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and X-ray diffraction (XRD). The results show that the deposited films are composed of α-C3N4, β-C3N4 phase and have the N/C atomic ratio of 2.01. The optical emission spectroscopy (OES) studies indicate that the introduction of a dc glow discharge and the adoption of a higher gas pressure during the film deposition are favorable to the net generation of the atomic N, CN radicals and N+2 in B2Σ+u excited state in the plasma, which are considered to play a major role in the synthesis of carbon nitride.

  15. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P, B

    2001-07-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  16. Effect of Hydrogen on the Properties of Amorphous Carbon Nitride Films

    Czech Academy of Sciences Publication Activity Database

    Mikmeková, Eliška; Urbánek, Michal; Fořt, Tomáš; Di Mundo, R.

    Chengdu : Institute of Electrical and Electronics Engineers, Inc, 2010, s. 291-295. ISBN 978-1-4244-8759-2. [International Conference on Manufacturing Science and Technology - ICMST 2010. Kuala Lumpur (MY), 26.11.2010-28.11.2010] Institutional research plan: CEZ:AV0Z20650511 Keywords : hydrogenated alfa-CNx films * ressidal stress * r. f. magnetron sputtering * SLEEM * XPS * TDMS * AFM Subject RIV: JI - Composite Materials

  17. Effect of acetic acid on electrochemical deposition of carbon-nitride thin film

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Electrochemical deposition method was employed to prepare CNx thin film from methanol-urea solution,and it was shown that adding a little acetic acid in the solution significantly affected the deposition process.After optimizing the experiment conditions,we obtained polycrystalline grains with sizes of about 3―7μm on the faces of single crystal silicon.X-ray diffraction spectrua indicate that the grains are mainly composed of cubic phase mixed with a small amount of β and α phases.

  18. Laser ablation of molecular carbon nitride compounds

    International Nuclear Information System (INIS)

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C2N4H4), melamine (C3N6H6), and melem (C6N10H6), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials

  19. Laser ablation of molecular carbon nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, D., E-mail: d.fischer@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Schwinghammer, K. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany); Sondermann, C. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Lau, V.W.; Mannhart, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Lotsch, B.V. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany)

    2015-09-15

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C{sub 2}N{sub 4}H{sub 4}), melamine (C{sub 3}N{sub 6}H{sub 6}), and melem (C{sub 6}N{sub 10}H{sub 6}), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials.

  20. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CNx) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CNx films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N2/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, Vs, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at Vs ≥ 60 V, Vs ≥ 100 V, and Vs = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of Vs for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all Vs, while CNx films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film

  1. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  2. Preparation and characterization of boron nitride/carbon fiber composite with high specific surface area

    International Nuclear Information System (INIS)

    Boron nitride can be used as a good catalyst carrier because of its high thermal conductivity and chemical stability. However, a high specific surface area of boron nitride is still desirable. In this work, a carbon fiber composite coated with boron nitride villous nano-film was prepared, and was also characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and Brunauer-Emmett-Teller analysis. The results indicated that the carbon fibers were covered by uniform villous boron nitride films whose thickness was about 150 - 200 nm. The specific surface area of the boron nitride/carbon fiber composite material was 96 m2 g-1, which was markedly improved compared with conventional boron nitride materials. (orig.)

  3. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon or diamondlike carbon (DLC) films were formed by 400 eV methane (CH4) ion bombardment of various smooth and rough ceramics, as well as ceramics coated with a layer of Si or Ti. Adhesion was measured by a bonded-pin method. Excellent adhesion was measured for smooth SiC and Si3N4, but adhesion of DLC to smooth Al2O3 and ZrO2 was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective due to poor bonding between the DLC film and Ti. Bulk thermodynamic calculations are not directly applicable to bonding at the interface because the interface is two dimensional and the compositions of interfacial phases are generally not known. If the standard enthalpy ΔH degree for the reaction between CH4 and the substrate material is calculated under the assumption that a carbide phase is produced, a relationship is seen between the reaction enthalpy and the relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. The lack of adhesion to the Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for the reaction with CH4 positive

  4. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  5. Characterization and properties of highly adhesive titanium nitride and tungsten nitride thin films

    International Nuclear Information System (INIS)

    The paper presents results on the physical characteristics and mechanical properties of titanium nitride (TiN) and tungsten nitride (W2N) thin films grown by reactive DC magnetron sputtering. The films were deposited in a system with several magnetron modules of different sputtering materials suitable for deposition of single-layer metal nitride films and multilayer nitride coatings. The deposition conditions were optimized to obtain films with the highest adhesion to substrates of machine steel and sintered hard alloy. The adhesion of the films was measured in dependence on two principal process parameters: the nitrogen partial pressure in the magnetron discharge gas mixture of nitrogen and argon and the substrate temperature. The composition of the TiN films was determined by Auger electron spectroscopy. The microstructure and the crystallization trend of the films were studied by transmission electron microscopy and selected area electron diffraction. The hardness of the films was examined using standard measuring methods

  6. Composition and microhardness of CAE boron nitride films

    International Nuclear Information System (INIS)

    The paper deals with boron nitride produced by cathodic arc evaporation techniques.The films were applied on titanium and cemented carbide substrates. Their characterization was carried out using X-ray diffraction and Knoop microhardness tests. Demonstrated are the high properties of two-phase films, containing β (cubic) and γ (wurtzitic) modifications of boron nitride. (author). 7 refs., 1 fig., 3 tabs

  7. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  8. Magnetron sputter deposition of low-stress, carbon-containing cubic boron nitride films using Ar-N2-CH4 gas mixtures

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) films produced by PVD and plasma-assisted CVD techniques typically exhibit undesired high compressive stresses. One of the effective and feasible methods to reduce stress and hence improve film adhesion has been a controlled addition of a third element into the film during deposition. In the present study, BN films were grown on to silicon substrates using reactive magnetron sputtering with a hexagonal BN target. An auxiliary flow of methane was mixed into argon and nitrogen as the working gas. The deposition was conducted at various methane flow rates at 400 oC substrate temperature, 0.2 Pa total working pressure, and - 250 V r.f. substrate bias. The microstructure of the deposited films was then examined in dependence of the methane flow rate. With increasing methane flow rate from 0 to approx. 2.0 sccm, the fraction of the cubic BN phase in the deposited films decreased gradually down to approx. 75 vol.%, whereas the film stress was reduced much more rapidly and almost linearly in relation to the methane flow rate. At 2.1 sccm methane, the stress became approx. 3 times reduced. Owing to the significantly decreased film stress, adherent, micrometer thick, cubic-phase dominant films can be allowed to form on silicon substrate. The microstructure of the films will be illustrated through FTIR and XRR.

  9. Microstructure analysis of the iron nitride thin films nitrided on the surface of machinery component materials

    International Nuclear Information System (INIS)

    On this study the ion nitriding process of the machinery component materials, which consist of the piston pen and the piston rings, have been conducted. Ion nitriding of the machinery component materials was performed for some variation of nitriding temperature, nitriding time and pressure of nitrogen gas using DC glow discharge. The optimum hardness of the piston pen samples was obtained at the nitriding temperature of 100°C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.6 mbar, and the hardness value increased approximately six times compared with the non nitrided samples; while the hardness value of the piston ring was increase approximately 2.6 time at the temperature nitriding of 100°C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.2 mbar. To observe the micro-structure and elemental composition of iron nitride thin films formed on the surface of the samples was used SEM-EDAX, and the phase structure of iron nitride thin films was observed by using XRD. Based on the observations was known that a compound layer formed on the surface of samples containing different nitrogen and form the phase structure of γ-Fe4N, ε-Fe3N and ζ-Fe2N that have a very good mechanical properties. (author)

  10. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  11. Recent progress in the synthesis and characterization of amorphous and crystalline carbon nitride coatings

    CERN Document Server

    Widlow, I

    2000-01-01

    This review summarizes our most recent findings in the structure and properties of amorphous and crystalline carbon nitride coatings, synthesized by reactive magnetron sputtering. By careful control of the plasma conditions via proper choice of process parameters such as substrate bias, target power and gas pressure, one can precisely control film structure and properties. With this approach, we were able to produce amorphous carbon nitride films with controlled hardness and surface roughness. In particular, we can synthesize ultrathin (1 nm thick) amorphous carbon nitride films to be sufficiently dense and uniform that they provide adequate corrosion protection for hard disk applications. We demonstrated the strong correlation between ZrN (111) texture and hardness in CN sub x /ZrN superlattice coatings. Raman spectroscopy and near-edge X-ray absorption show the predominance of sp sup 3 -bonded carbon in these superlattice coatings.

  12. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm-2 and 2 GeV xenon ion with a dose of 1E12 ions.cm-2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C3N4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C3N4 matrix was predominantly sp2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  13. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  14. Plasma enhanced chemical vapor deposition of zirconium nitride thin films

    International Nuclear Information System (INIS)

    Depositions of high quality zirconium nitride, (Zr3N4), films using the metal-organic precursor Zr(NEt2)4 were carried out in a microwave argon/ammonia plasma (2.45 GHz). The films were deposited on crystalline silicon wafers and quartz substrates at temperatures of 200--400 C. The transparent yellow films have resistivity values greater than MΩ cm. The stoichiometry is N/Zr = 1.3, with less than 5 atom % carbon and little or no oxygen. The hydrogen content is less than 9 atom %, and it does not vary with deposition temperature. The growth rates range from 600 to 1,200 angstrom/min, depending on the flow rates and precursor bubbler temperature. X-ray diffraction studies show a Zr3N4 film deposited at 400 C is polycrystalline with some (220) orientation. The crystallite size is approximately 30 angstrom. The band gap, as estimated from transmission spectra, is 3.1 eV

  15. A chromium nitride/carbon nitride containing graphitic carbon nanocapsule hybrid as a Pt-free electrocatalyst for oxygen reduction.

    Science.gov (United States)

    Zhao, Lu; Wang, Lei; Yu, Peng; Zhao, Dongdong; Tian, Chungui; Feng, He; Ma, Jing; Fu, Honggang

    2015-08-11

    Chromium nitride nanoparticles supported on graphitic carbon nanocapsules containing carbon nitride (CrN/GC) have been synthesized by a solvothermal-assisted ion-exchange route. As a Pt-free catalyst, the CrN/GC hybrid exhibits superior activity, stability, methanol immunity and a dominant 4-electron pathway towards oxygen reduction reaction. PMID:26145711

  16. Effects of methane in the deposition of superconducting niobium nitride thin films at ambient substrate temperature

    International Nuclear Information System (INIS)

    Thin films of the niobium-carbon-nitrogen system have been prepared at ambient substrate temperature by rf diode reactive sputtering in an argon-nitrogen atmosphere with controlled amounts of methane added to the sputter gas. Superconducting transition temperatures ranged from approximately 11 to 15.85 0K. Auger and x-ray diffraction analysis indicate that all films were of the single phase B1 structure with a small amount of ν-phase hexagonal structure in the very low carbon containing films. A correlation of the superconducting properties, room temperature sheet resistance, preferred crystallite orientation, and film composition was observed. The results of this investigation show that high T/sub c/ niobium nitride/niobium carbonitride thin films can be prepared at ambient substrate temperatures with the proper amount of nitrogen and methane partial pressures during film deposition. These films have potential application for the fabrication of high T/sub c/ Josephson tunnel junctions

  17. Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

    OpenAIRE

    Zorn, Gilad; MIGONNEY, Véronique; Castner, David G.

    2014-01-01

    The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulf...

  18. Synthesis of carbo-nitride films using high-energy shock plasma deposition

    International Nuclear Information System (INIS)

    Recent investigations shows that an enhanced nitrogen content of carbo-nitride films improves wear resistance, hardness, tribological and other properties of these films. The present work reports on the properties of nitrogen rich carbon films produced by an intense gas discharge between carbon electrodes in a nitrogen atmosphere. The energy of the discharge, initial nitrogen pressure, number of discharges and geometry are varied to establish their effect on the nitrogen content and the mechanical, structural and morphological characteristics of the deposited carbon-nitride films. The structural diagnostics include optical and scanning electron microscopy, as well as Auger and Raman Spectroscopes and Rutherford Backscattering. The C-N films formed fell into two categories, differing in morphology and mechanical properties. Type I are C-N films, containing up to 35 at. % nitrogen, and which have an amorphous structure. These films are formed at relatively low plasma shock pressure and exhibit relatively low microhardness, ∼ 2 GPa. In a relatively narrow range of the plasma shock pressure and temperature the second type of C-N deposition is observed consisting of high density, closely-packed crystal-like grains growing perpendicular to the substrate surface and displaying a cauliflower-like morphology. The microhardness of these films reaches 15 GPa, as measured by the Vickers method. 14 refs., 7 figs

  19. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  20. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  1. Synthesis of hollow carbon nitride microspheres by an electrodeposition method

    International Nuclear Information System (INIS)

    Hollow carbon nitride microspheres have been synthesized using a novel liquid phase electrodeposition technique. The microspheres are composed of numerous nanoparticles with size of about 5-30 nm. The diameters of the spheres range from 800 nm to 1.1 μm, and shell thickness is about 80-250 nm. This is the first attempt to synthesize carbon nitride with specific nanostructure by the electrodeposition method, which is proved to be facile and effective, and can be performed in an atmospheric environment and at a rather low temperature. The hollow carbon nitride may have potential applications as lubrication, catalysis, biomolecule adsorption, drug delivery, electronic materials, etc. in the future.

  2. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  3. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    International Nuclear Information System (INIS)

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo2N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C

  4. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  5. Preparation and characterization of thick cubic boron nitride films

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) films are prepared by the radio frequency magnetron sputtering technique. The stresses and crystallinities of the films are estimated by the Fourier transform infrared spectroscopy of c-BN samples, including the peak shifts and varieties of full widths at half maximum. The effects of the B—C—N interlayer and the two-stage deposition method on the c-BN films are investigated. Then the thick and stable c-BN films are prepared by a combination of the two methods. The properties of the interlayer and film are also characterized

  6. Tribological properties of cubic, amorphous and hexagonal boron nitride films

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN), amorphous boron nitride (a-BN) and hexagonal boron nitride (h-BN) films were deposited onto a silicon substrate using a magnetically enhanced plasma ion plating method which has a hot cathode plasma discharge in a parallel magnetic field. A reciprocating tribometer was used to examine friction and wear properties for these three BN films, whose crystal structures were identified by IR spectroscopy. The tribological properties were revealed to be highly dependent on the films' crystal structures. The c-BN film showed the highest wear and peeling resistance of the tested films. The lubricating performance of the c-BN film proved significant with a long lubricating life and low friction. In contrast, the a-BN and h-BN films showed short lubricating endurance lives and large friction changes in spite of the fact that they are good in general as solid lubricants. These unexpected results are speculated to reflect the premature debonding of the h-BN and a-BN films during sliding and the subsequent discharge of their flakes out of the nip between the substrate and the ball indenter, owing to their lower adhesion to the substrate. (orig.)

  7. Crystallographic phases and magnetic properties of iron nitride films

    International Nuclear Information System (INIS)

    Iron nitride films, including single phase films of α-FeN (expanded bcc Fe), γ′-Fe4N, ε-Fe3−xN (0 ≤ x ≤ 1), and γ″-FeN, were sputtered onto AlN buffered glass substrates. It was found possible to control the phases in the films merely by changing the nitrogen partial pressure during deposition. The magnetization decreased with increased nitrogen concentration and dropped to zero when the N:Fe ratio was above 0.5. The experimental results, along with spin polarized band calculations, have been used to discuss and analyze the magnetic properties of iron nitrides. It has been demonstrated that in addition to influencing the lattice constant of the various iron nitrides, the nearest N atoms have a significant influence on the exchange splitting of the Fe atoms. Due to the hybridization of Fe-3d and N-2p states, the magnetic moment of Fe atoms decreases with an increase in the number of nearest neighbor nitrogen atoms. - Highlights: • Single phase γ′-Fe4N, ε-Fe3−xN, and γ″-FeN films were obtained using dc sputtering. • The phases in iron nitride films can be controlled by the nitrogen partial pressure. • The nearest N neighbors have a significant influence on the exchange splitting of Fe

  8. Growth of atomically thin hexagonal boron nitride films by diffusion through a metal film and precipitation

    International Nuclear Information System (INIS)

    Atomically thin hexagonal boron nitride films were grown on both the top and bottom surfaces of a polycrystalline Co or Ni film by annealing a Co (Ni)/amorphous boron nitride/SiO2 structure in vacuum. This method of growing hexagonal boron nitride is much simpler than other methods, such as thermal chemical vapour deposition. B and N atoms diffuse through the metal film, although N is almost completely insoluble in both Co and Ni, and precipitation occurs at the topmost surface. The mass transport is considered to be caused by grain boundary diffusion.

  9. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Science.gov (United States)

    Galeano-Osorio, D. S.; Vargas, S.; López-Córdoba, L. M.; Ospina, R.; Restrepo-Parra, E.; Arango, P. J.

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature ( Troom), 100 °C, 150 °C and 200 °C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 °C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the ID/ IG or sp 3/sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

  10. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    International Nuclear Information System (INIS)

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (Troom), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the ID/IG or sp3/sp2 ratio and not by the absolute sp3 or sp2 concentration.

  11. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Energy Technology Data Exchange (ETDEWEB)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

  12. Grafting titanium nitride surfaces with sodium styrene sulfonate thin films.

    Science.gov (United States)

    Zorn, Gilad; Migonney, Véronique; Castner, David G

    2014-09-01

    The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxy-nitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were ∼1.5 and ∼1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 ± 70 ng/cm(2). PMID:25280842

  13. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)

    2000-01-01

    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...... by replacement of the nitride ions with oxide ions in the molten carbonate electrolyte....

  14. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-06-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  15. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms. PMID:27251325

  16. Beryllium nitride thin film grown by reactive laser ablation

    OpenAIRE

    G. Soto; Diaz, J.A.; Machorro, R.; Reyes-Serrato, A.; de la Cruz, W.

    2001-01-01

    Beryllium nitride thin films were grown on silicon substrates by laser ablating a beryllium foil in molecular nitrogen ambient. The composition and chemical state were determined with Auger (AES), X-Ray photoelectron (XPS) and energy loss (EELS) spectroscopies. A low absorption coefficient in the visible region, and an optical bandgap of 3.8 eV, determined by reflectance ellipsometry, were obtained for films grown at nitrogen pressures higher than 25 mTorr. The results show that the reaction ...

  17. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  18. Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

    International Nuclear Information System (INIS)

    Highlights: → C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. → RF plasma treatment enables nitriding for non-heated substrates. → The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. → Nitrogen plasma active species diffuse into the samples and lead to the formation of FexN. → The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N2 gas. Surface characterizations before and after N2 plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 μm for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV0.005 at a plasma processing time of 8 h.

  19. Magnetron sputtering of thin nitride films

    OpenAIRE

    Kola, Prashanthi V

    1995-01-01

    The objective in this investigation was to design and commission a magnetron sputter deposition system and investigate the properties of hard coatings for mechanical and biomedical applications. The deposition of titanium (Ti) and titanium nitride (TiN) was undertaken as part of the commissioning tests and further work was conducted on the effect of the deposition parameters on the properties of TiN, specifically for biocompatible applications. A thorough understanding of the deposition proce...

  20. Microstructure and conductivity of hydrogenated carbon nitride film%掺氮类金刚石薄膜的微观结构和电导特性

    Institute of Scientific and Technical Information of China (English)

    张伟丽; 夏义本; 居建华; 王林军; 方志军

    2001-01-01

    Microstructures of nitrogen incorporated hydrogenated carbon (a-C:H:N) films deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) method were characterized by Atomic Force Microscopes (AFM), Auger Electron Spectra (AES), Infrared (IR) and Micro- Raman spectra. Results indicate that there are some nanometer particles existed in the films. The con- tent of nitrogen in the films increases with the ratio of N2 to CH4 in the gas mixture. The large amount of nitrogen in the films takes the form of C-N and N-H, small amount of that takes the form of C≡ N. The influence of thermal annealing on the conductivity of a-C:H:N films was also investigated .%用射频等离子体化学气相沉积法(RFCVD)和CH4、N2与Ar组成的混合气体制备掺氮类 金刚石薄膜(a-C:H:N)。用原子力显微镜(AFM),俄歇电子能谱(AES),红外光谱(IR)以及显 微拉曼谱(Micro-Raman)对a-C:H:N薄膜的表面形貌、组分和微观结构进行了表征。实验结 果表明,薄膜中有纳米量级的颗粒存在,而且随反应气体中N2与CH4比值的增大,薄膜中氮元 素的含量也随之增大,并主要以C-N键和N-H键形式存在,少量以C≡N键形式存在。还研 究了热退火对a-C:H:N薄膜的电导率的影响。

  1. Structure and Thermal Stability of Copper Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Guangan Zhang

    2013-01-01

    Full Text Available Copper nitride (Cu3N thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.

  2. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  3. Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation

    International Nuclear Information System (INIS)

    Titanium and titanium nitride thin films were deposited on silica glass and W substrates at a high coating growth rate by plasma-activated reactive evaporation (ARE). The crystal structure, preferred orientation and grain size of the coatings were determined by x-ray diffraction (XRD) technique using Cu-Kα x rays. The analysis of the coating morphology was performed by field-emission scanning electron microscopy (FE-SEM). The composition of the films was analyzed by Auger electron spectroscopy (AES) and electron-probe microanalysis (EPMA). The titanium and titanium nitride condensates were collected on a carbon-coated collodion film then characterized by transmission electron microscopy (TEM) in order to study the structures of the deposits at very short deposition times. The resistivity of the films was measured by using the four-point-probe method. The titanium coatings were found to consist of very fine particles (40 nm in grain size) and to exhibit a strong (002) texture. The titanium nitride coatings were substoichiometric (TiNx,xx coatings obtained at low temperature and a high growth rate in this work exhibited a rather high electrical conductivity

  4. Direct growth of graphene on gallium nitride using C2H2 as carbon source

    Science.gov (United States)

    Wang, Bing; Zhao, Yun; Yi, Xiao-Yan; Wang, Guo-Hong; Liu, Zhi-Qiang; Duan, Rui-Rei; Huang, Peng; Wang, Jun-Xi; Li, Jin-Min

    2016-04-01

    Growing graphene on gallium nitride (GaN) at temperatures greater than 900°C is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon source. We demonstrated that graphene can be grown both on copper and directly on GaN epi-layers. The Raman spectra indicated that the graphene films were about 4-5 layers thick. Meanwhile, the effects of the growth temperature on the growth of the graphene films were systematically studied, and 830°C was found to be the optimum growth temperature. We successfully grew high-quality graphene films directly on gallium nitride.

  5. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  6. Effects of experimental conditions on the growth of vertically aligned carbon nitride nanocone arrays

    International Nuclear Information System (INIS)

    Vertically aligned carbon nitride nanocone (CNNC) arrays were prepared on Ni-covered (100) silicon wafers by an abnormal glow discharge plasma assisted chemical vapor deposition method. In order to control the growth of the CNNC arrays, the distance of the anode tip to the substrate surface was adjusted for it affected the contents and activities of the species in the plasmas leading to the CNNC growth. Based on the characterization of the as-grown thin films and the analysis of the growth environments, the effects of the experimental conditions on the growth of the CNNC arrays were studied and their growth mechanism was discussed. The tip−substrate distance strongly affects the CNNC growth. Under appropriate experimental conditions, the vertically-aligned and intact CNNC arrays with the β-C3N4 microstructure and the minimum tip curvature diameter of only 3–4 nm could be fabricated. This kind of CNNC arrays have many potential applications, such as tips for microscopes, electron-emitting units in field emission displays, electron-capture electrodes of solar cells etc. - Highlights: ►Vertically aligned carbon nitride nanocone arrays were prepared. ►An abnormal glow discharge plasma assisted chemical vapor deposition method. ►Tip-substrate distance strongly affects the growth of carbon nitride nanocones. ►The growth mechanism of carbon nitride nanocones is discussed

  7. Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption

    International Nuclear Information System (INIS)

    Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency (RF) magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Characterisation of chromium nitride films produced by PVD techniques

    OpenAIRE

    Barata, A.; CUNHA L.; Moura, C.

    2001-01-01

    Chromium nitride thin films have been deposited on stainless steel substrates by r.f. reactive magnetron sputtering. The influence of process parameters such as substrate bias and partial pressure of reactive gas have been investigated. The characterisation of the coatings was performed by X-ray diffraction (XRD), Raman Spectroscopy (RS) and nano-indentation experiments. These studies allow to analyse the influence of deposition parameters in crystal phases, crystal orientationytextu...

  9. DFT Studies on Electronic Structures of Boro-Nitride-Carbon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    YAN Ming; HUANG Chun-Hui

    2005-01-01

    In this paper, the configurations of Boro-Nitride-Carbon nanotubes with BNC2 composition were optimized by ROHF method. According to the density functional theory, the electronic structures of Boro-Nitride-Carbon nanotubes were calculated by DFT/ROB3LYP method. By analyzing the energy gap, density of electronic state and bonding maps of atoms, the conductive properties of Boro-Nitride-Carbon nanotubes were obtained, and compared with those of carbon nanotubes and other Boro-Nitride nanotubes.

  10. Symmetric organization of self-assembled carbon nitride

    International Nuclear Information System (INIS)

    A scheme for creating 'flower-like' nanostructures of carbon nitride is described that involves the self-assembly of nanocrystals following laser ablation of a solid graphite target immersed in aqueous ammonia solution. The primary nanocrystals possess rod-like symmetry, and then self-assemble upon drying to form nanoleaf or nanopetal shaped structures. Samples were characterized using x-ray diffraction (XRD), transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), x-ray photoelectron microscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The analyses confirmed their composition to be consistent with that of crystalline β-phase carbon nitride. The morphologies of the carbon nitride nanostructures depended strongly on the synthesis conditions and upon the conditions under which the aqueous suspension of ablated particles were dried

  11. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

    Science.gov (United States)

    Sowers, A. T.; Christman, J. A.; Bremser, M. D.; Ward, B. L.; Davis, R. F.; Nemanich, R. J.

    1997-10-01

    Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

  12. Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

    International Nuclear Information System (INIS)

    Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B2H6) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH3-NH3) which is a crystalline solid at room temperature with a high vapour pressure. The BH3-NH3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm-1 (hexagonal) and 1070 cm-1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

  13. Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

  14. Reactive DC Magnetron Sputtering Deposition of Copper Nitride Thin Film

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Copper nitride thin film was deposited on glass substrates by reactive DC (direct current) magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were (111) and (200) at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu (111) peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality (111) Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.

  15. Magnetron sputter deposited tantalum and tantalum nitride thin films: An analysis of phase, hardness and composition

    International Nuclear Information System (INIS)

    Tantalum (Ta) and tantalum nitride thin films are highly important as diffusion barriers and adhesion layers in microelectronics and hard coatings for cutting tools. In this study, the effect of the underlying substrate on the phase formation of Ta and the influence of a changing N2/Ar flow ratio on hardness, phase and composition of reactively formed tantalum nitride have been investigated. Ta is DC sputter deposited and forms β-Ta on amorphous diamond-like carbon and on the amorphous natural oxide layers of Ti and Si(100) while a 15 nm TaN seed layer results in the formation of α-Ta. The chemical composition of the topmost layers of a substrate influences the formation of α- and β-Ta. With increasing N2/Ar flow ratios a transition from amorphous Ta-rich tantalum nitride over face-centered cubic tantalum nitride (fcc-TaN) to (100) textured fcc-TaN at flow ratios above 45% is observed. The hardness of the tantalum nitride thin film reaches a maximum at a flow ratio of 45%, followed by a decrease in hardness for higher N2/Ar flow ratios. The increase in hardness is associated with a decrease in grain size and shows a stronger correlation for a Meyers and Ashworth relationship than for a Hall–Petch relationship. - Highlights: • Chemical composition of the substrate influences the phase of deposited Ta. • FCC-TaN seed layer leads to α-Ta on the natural oxide layers of Ti and Si(100). • Meyers and Ashworth relationship correlates stronger than Hall–Petch relationship

  16. Characterization of tantalum nitride thin films synthesized by magnetron sputtering

    Science.gov (United States)

    Zaman, Anna

    Tantalum Nitride is chemically inert, oxidation resistant and hard. TaN finds its application as a protective coating on steel due to their excellent wear properties. It has become a very promising diffusion barrier material in Cu interconnect technology in microelectronics. TaN has not been analyzed as much as other transition metal nitrides like the TiN system because TaN exhibits various stable and metastable phases. The emergence of these phases and the different physical, chemical and mechanical properties depend on the growth technique and deposition conditions. TaN thin films were deposited using the magnetron PVD system in the SaNEL lab. The aim of this study was to identify the effect of processing parameters like N2/Ar ratio, substrate bias and temperature, on the emergence of the different phases present in TaN thin films and the effect of deposition conditions on the mechanical properties of these films. The phases present in the films, deposited at varying conditions were explored via low angle X-Ray Diffraction (XRD), hardness of the films was measured by Nanoindentation and tribological tests were carried out to measure the frictional and wear behavior. It was observed that at high percentage of Nitrogen (10%-25%) the main phase present was FCC TaN and as the nitrogen content was decreased a mixture of phases was present in these films. The hardness of the films increases as we decrease the Nitrogen content, yielding a film with a hardness of 37.1 GPa at 3% N2 with a substrate bias voltage of -100 V.

  17. Templateless Infrared Heating Process for Fabricating Carbon Nitride Nanorods with Efficient Photocatalytic H2 Evolution.

    Science.gov (United States)

    Li, Hui-Jun; Qian, Dong-Jin; Chen, Meng

    2015-11-18

    The bottom-up fabrication of carbon nitride nanorods is realized through the direct infrared heating of dicyandiamide. The approach requires no templates or extra organics. The controlled infrared heating has a major influence on the morphology of the obtained carbon nitrides. The precursors assemble into carbon nitride nanorods at low power levels, and they grow into nanoplates at high power levels. The formation mechanism of the carbon nitride nanorods is proposed to be a kinetically driven process, and the photocatalytic activity of the carbon nitride nanorods prepared at 50% power for hydrogen evolution is about 2.9 times that of carbon nitride nanoplates at 100% power. Structural, optical, and electronic analysis demonstrates that the enhancement is primarily attributed to the elimination of structural defects and the improved charge-carrier separation in highly condensed and oriented carbon nitride nanorods. PMID:26501184

  18. Electrical resistivity of polycrystalline niobium nitride films

    International Nuclear Information System (INIS)

    The electrical resistivity of magnetron-sputtered polycrystalline NbN thin films has been measured as a function of the temperature for a variety of samples exhibiting different grain structures. The data are very well described by a model recently proposed by Reiss, Vancea, and Hoffman for granular metallic systems. The model correctly predicts the observed negative temperature coefficient of resistivity and the occurrence of a minimum in the temperature dependence of the resistivity

  19. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    Science.gov (United States)

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  20. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

    Science.gov (United States)

    Lee, Kang Hyuck; Shin, Hyeon-Jin; Kumar, Brijesh; Kim, Han Sol; Lee, Jinyeong; Bhatia, Ravi; Kim, Sang-Hyeob; Lee, In-Yeal; Lee, Hyo Sug; Kim, Gil-Ho; Yoo, Ji-Beom; Choi, Jae-Young; Kim, Sang-Woo

    2014-10-20

    Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. PMID:25204810

  1. Synchrotron irradiation study of hydrogenated silicon nitride film

    International Nuclear Information System (INIS)

    In the present study, the modifications in hydrogenated silicon nitride film upon synchrotron radiation (SR) illumination (using white light) are investigated by in situ soft x-ray reflectivity (XRR) measurements at Indus-l SR source. The illumination experiments are performed at 10 deg incidence angle at which the majority of incident radiation are restricted to ∼80 A depth. Due to irradiation the hydrogen bonds which are responsible for voids and network deformation, are more likely to break and pave the path for the formation of compact Si3N4 network. An increase in the film density and decrease in the film thickness is observed. In addition, the surface morphology changed significantly. Atomic force microscopy confirms the surface deformation. Out diffusion of hydrogen near the surface may be responsible for the surface modifications. (author)

  2. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  3. Superconducting niobium nitride thin films by reactive pulsed laser deposition

    International Nuclear Information System (INIS)

    The structural, electronic, and nanomechanical properties of cubic niobium nitride thin films were investigated. The films were deposited on Si(100) under different background nitrogen gas pressures (26.7-66.7 Pa) at constant substrate temperature of 800 °C by reactive pulsed laser deposition. Our results reveal that the NbNx films exhibit a cubic δ-NbN with strong (111) orientation and highly-oriented textured structures. We find nitrogen background pressure to be an important factor in determining the structure of the NbNx films. The dependence of the electronic structure as well as that of the superconducting transition temperature (Tc) on the nitrogen gas background pressure is studied. A correlation between surface morphology, electronic and superconducting properties is found for the deposited NbNx thin films. The highly-textured δ-NbN films have a Tc up to 15.07 K. Nanoindentation with continuous stiffness method is used to evaluate the hardness and modulus of the NbNx thin films as a function of depth. The film deposited at nitrogen background pressure of 66.7 Pa exhibits improved superconducting properties and shows higher hardness values as compared to films deposited at lower nitrogen pressures. - Highlights: • NbN thin films were deposited on Si(100) using reactive pulse laser deposition. • Different nitrogen background pressures were used. • Increasing nitrogen gas pressure impacts the phase and superconducting properties. • Thin NbN films with superconducting phase showed transition temperature up to 15.07 K

  4. Preparation and characterization of morph-genetic aluminum nitride/carbon composites from filter paper

    International Nuclear Information System (INIS)

    Morph-genetic aluminum nitride/carbon composites with cablelike structure were prepared from filter paper template through the surface sol-gel process and carbothermal nitridation reaction. The resulting materials have a hierarchical structure originating from the morphology of cellulose paper. The aluminum nitride/carbon composites have the core-shell microstructure, the core is graphitic carbon, and the shell is aluminum nitride nanocoating formed by carbothermal nitridation reduction of alumina with the interfacial carbon in nitrogen atmosphere. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscope were employed to characterize the structural morphology and phase compositions of the final products

  5. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).

  6. Tribological and cutting behavior of silicon nitride tools coated with monolayer- and multilayer-microcrystalline HFCVD diamond films

    Science.gov (United States)

    Chen, Naichao; Shen, Bin; Yang, Guodong; Sun, Fanghong

    2013-01-01

    Monolayer-micrometric (MN-MCD), monolayer-submicrometric (MN-SMCD) and multilayer-micrometric (MT-MCD) diamond films are grown on silicon nitride substrates by hot filament chemical vapor deposition (HFCVD) technique. The as-deposited diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectrometer (EDS), Raman spectrum and 3D surface topography. Tribological properties are assessed by the sliding tests using a reciprocal motion ball-on-flat (BOF) configuration. The friction coefficients are measured as 0.126 for the MN-MCD films, 0.076 for the MN-SMCD films and 0.071 for the MT-MCD films during dry sliding against silicon nitride counterface. The different carbon content of the films may result in the visible diminution of friction coefficient for the MT-MCD films relative to the MN-MCD films. The results show that the MN-MCD and MT-MCD films present the much higher wear resistance than the MN-SMCD films. Meanwhile, the cutting performances of as-deposited diamond films are evaluated by machining aluminum-silicon alloy material. The experimental results show that the MT-MCD insert presents the best behavior regarding the tool wear.

  7. Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

    International Nuclear Information System (INIS)

    Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

  8. Real time ellipsometric study of boron nitride thin film growth

    International Nuclear Information System (INIS)

    The authors present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PEVCD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on in-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trajectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. The authors applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sophisticated model considering a variable refractive index could better describe these films

  9. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  10. Tribological and cutting behavior of silicon nitride tools coated with monolayer- and multilayer-microcrystalline HFCVD diamond films

    International Nuclear Information System (INIS)

    Highlights: ► Multilayer-MCD film shows lower friction coefficient compared monolayer-MCD film. ► Multilayer-MCD film is similar in friction coefficient to monolayer-SMCD film. ► Multilayer-MCD film presents the higher wear resistance than monolayer-SMCD film. ► Multilayer-MCD diamond insert presents the perfect behavior regarding tool wear. - Abstract: Monolayer-micrometric (MN-MCD), monolayer-submicrometric (MN-SMCD) and multilayer-micrometric (MT-MCD) diamond films are grown on silicon nitride substrates by hot filament chemical vapor deposition (HFCVD) technique. The as-deposited diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectrometer (EDS), Raman spectrum and 3D surface topography. Tribological properties are assessed by the sliding tests using a reciprocal motion ball-on-flat (BOF) configuration. The friction coefficients are measured as 0.126 for the MN-MCD films, 0.076 for the MN-SMCD films and 0.071 for the MT-MCD films during dry sliding against silicon nitride counterface. The different carbon content of the films may result in the visible diminution of friction coefficient for the MT-MCD films relative to the MN-MCD films. The results show that the MN-MCD and MT-MCD films present the much higher wear resistance than the MN-SMCD films. Meanwhile, the cutting performances of as-deposited diamond films are evaluated by machining aluminum–silicon alloy material. The experimental results show that the MT-MCD insert presents the best behavior regarding the tool wear.

  11. Heavy ion ERD of oxy-nitride and nitride films with a position-sensitive gas ionization detector

    International Nuclear Information System (INIS)

    Full text: The atomic composition of materials and thin films can be quantitatively profiled as function of sample depth with heavy ion elastic recoil detection (ERD). When using a high-energy, heavy incident beam, such as 200MeV gold ions, the sensitivity is similar for all elements and better than 0.1 atomic percent. A prime application of heavy ion ERD is the analysis of silicon oxy-nitride and gallium nitride films, which are developed for a variety of opto-electronic applications. The technique can simultaneously resolve all chemical elements in these films including hydrogen, which is often present as a contaminant. This presentation reports on detailed studies of oxy-nitride and nitride films using heavy ion ERD carried out at the 14UD pelletron accelerator at the Australian National University. For films thinner than about 1 μm, the substrate interface can be resolved and, assuming uniformity, the film composition can be directly obtained by normalizing the measured yield for each element with the corresponding recoil cross-sections. Deviations from uniformity are evident from the corresponding energy spectra. By calibrating these spectra using known stopping powers, depth-information may be obtained and possible variations of the composition can be quantified. The concentration change at the interface between substrate and film can be studied individually for each element. A major obstacle in the ERD analysis of nitride films, is their radiation sensitivity, which generally results in the depletion of the nitrogen and hydrogen content during exposure to the incident beam. Using a position-sensitive gas ionization detectors with large acceptance angle, such beam-induced sample modification can be minimized. Residual desorption was found to be linear with incident fluence and can thus be reliably corrected

  12. Mechanical properties measurement of silicon nitride thin films using the bulge test

    Science.gov (United States)

    Lee, Hun Kee; Ko, Seong Hyun; Han, Jun Soo; Park, HyunChul

    2007-12-01

    The mechanical properties of silicon nitride films are investigated. Freestanding films of silicon nitride are fabricated using the MEMS technique. The films were deposited onto (100) silicon wafers by LPCVD (Low Pressure Chemical Vapor Deposition). Square and rectangular membranes are made by anisotropic etching of the silicon substrates. Then the bulge test for silicon nitride film was carried out. The thickness of specimens was 0.5, 0.75 and 1μm respectively. By testing both square and rectangular membranes, the reliability and valiant-ness of bulge test with regard to the shape of specimens was investigated. Also considering residual stress in the films, one can evaluate the Young's modulus from experimental load-deflection curves. Young's modulus of the silicon nitride films was about 232GPa. The residual stress is below 100MPa.

  13. Pulsed laser deposition of niobium nitride thin films

    International Nuclear Information System (INIS)

    Niobium nitride (NbNx) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbNx films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbNx films from mixed β-Nb2N and cubic δ-NbN phases to single hexagonal β-Nb2N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbNx deposited on Si(100) were also investigated. The NbNx films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbNx film morphology and phase

  14. Pulsed laser deposition of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ufuktepe, Yüksel, E-mail: ufuk@cu.edu.tr [Department of Physics, University of Cukurova, 01330 Adana (Turkey); Myneni, Ganapati, E-mail: rao@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  15. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  16. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Highlights: • Carbon nitride films were prepared by using radio frequency plasma enhanced chemical vapour deposition system by altering the electrode distance. • The effect of electrode distance on surface morphology, surface roughness, chemical bonding and hydrophobic behaviour has been studied. • Hydrophobic behaviour were studied by measuring contact angle and calculating surface energy. • CNx nanostructures show super-hydrophobic behaviour. • We report a tunable transition of hydrophilic to super-hydrophobic behaviour of film as electrode distance is reduced. - Abstract: Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films’ structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films’ surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of C=N to C=C and N−H to O−H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films’ characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface

  17. Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

    OpenAIRE

    Li, Weifeng; Yang, Yanmei; Zhou, Hongcai; Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be...

  18. On new allotropes and nanostructures of carbon nitrides

    OpenAIRE

    Bojdys, Michael Janus

    2010-01-01

    In the first section of the thesis graphitic carbon nitride was for the first time synthesised using the high-temperature condensation of dicyandiamide (DCDA) – a simple molecular precursor – in a eutectic salt melt of lithium chloride and potassium chloride. The extent of condensation, namely next to complete conversion of all reactive end groups, was verified by elemental microanalysis and vibrational spectroscopy. TEM- and SEM-measurements gave detailed insight into the well-defined morpho...

  19. Spotting 2D atomic layers on aluminum nitride thin films

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  20. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

    2011-10-15

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  1. Thermal and quantum phase slips in niobium-nitride nanowires based on suspended carbon nanotubes

    Science.gov (United States)

    Masuda, Kohei; Moriyama, Satoshi; Morita, Yoshifumi; Komatsu, Katsuyoshi; Takagi, Tasuku; Hashimoto, Takayuki; Miki, Norihisa; Tanabe, Takasumi; Maki, Hideyuki

    2016-05-01

    Superconducting nanowires have attracted considerable attention due to their unique quantum-mechanical properties, as well as their potential as next-generation quantum nanodevices, such as single-photon detectors, phase-slip (PS) qubits, and other hybrid structures. In this study, we present the results of one-dimensional (1D) superconductivity in nanowires fabricated by coating suspended carbon nanotubes with a superconducting thin niobium nitride (NbN) film. In the resistance-temperature characteristic curves, hallmarks of 1D superconductivity with PS events are observed with unconventional negative magnetoresistance. We also confirm that a crossover occurs between thermal and quantum PSs as the temperature is lowered.

  2. Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition

    International Nuclear Information System (INIS)

    We report the formation of smooth and conformal copper seed layer for electrodeposition by atomic layer deposition (ALD) and reducing anneal of a copper nitride film. The ALD copper nitride film was prepared at 100–140 °C using bis(1-dimethylamino-2-methyl-2-butoxy)copper(II) and NH3, and reduced to metallic copper film by annealing at 200 °C or higher temperatures. The growth rate of ALD copper nitride was 0.1 nm/cycle at 120–140 °C on both ruthenium and silicon oxide substrates, and the thickness of film was reduced approximately 20% by annealing. The resistivity of the 4.2 nm-thick copper film was 30 μΩ·cm. Both the ALD copper nitride and the reduced copper films exhibited extremely smooth surface and excellent step coverage, whereas the copper film deposited using alternating exposures to the copper precursor and H2 showed a rough surface. The copper film electrodeposited on the copper seed of this study exhibited lower resistivity and smoother surface as compared to the copper film electrodeposited on the ALD ruthenium seed. - Highlights: • Copper nitride thin film was grown by atomic layer deposition (ALD) at 100–140 °C. • Copper nitride was reduced to metallic copper by annealing in H2 at ≥ 200 °C. • Copper nitride and copper films showed smooth surface and excellent step coverage. • The copper film was better than ALD Ru as the seed layer for electrodeposition

  3. Pyrolyzed carbon film diodes.

    Science.gov (United States)

    Morton, Kirstin C; Tokuhisa, Hideo; Baker, Lane A

    2013-11-13

    We have previously reported pyrolyzed parylene C (PPC) as a conductive carbon electrode material for use with micropipets, atomic force microscopy probes, and planar electrodes. Advantages of carbon electrode fabrication from PPC include conformal coating of high-aspect ratio micro/nanoscale features and the benefits afforded by chemical vapor deposition of carbon polymers. In this work, we demonstrate chemical surface doping of PPC through the use of previously reported methods. Chemically treated PPC films are characterized by multiple spectroscopic and electronic measurements. Pyrolyzed parylene C and doped PPC are used to construct diodes that are examined as both p-n heterojunction and Schottky barrier diodes. Half-wave rectification is achieved with PPC diodes and demonstrates the applicability of PPC as a conductive and semiconductive material in device fabrication. PMID:24090451

  4. Modeling and experimental analysis of RPCVD based nitride film growth

    Science.gov (United States)

    Martin, C.; Butcher, K. S. A.; Wintrebert-Fouquet, M.; Fernandes, A.; Dabbs, T.; Chen, P. P.-T.; Carmen, R.

    2008-02-01

    The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the RPCVD process for GaN over more conventional deposition methods (such as MOCVD), which are realized through a lower growth temperature, compatibility with glass substrates, in addition to silicon and sapphire, and the complete elimination of toxic NH 3 from the growth process will be presented. These advantages will be discussed via analysis of X-Ray diffraction, Scanning Electron Microscopy (SEM) and Optical Transmission Spectroscopy characterization methods of samples grown using the RPCVD process. In addition, subsequent downstream device processing of double heterojunction devices grown on glass and sapphire substrates will be discussed.

  5. Tribological properties of sputtered tungsten and tungsten nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Wong; K.M.; ShenY.G.; Wong; P.L.

    2001-01-01

    The surface roughness, hardness and tribological properties of tungsten (W) and tung-sten nitride (WNx) thin films prepared by dc magnetron sputtering and reactive magnetron sputter-ing in Ar-N2 gas mixtures have been studied using atomic force microscopy (AFM), nanoindenta-tion measurements and ball-on-disc wear testing. A pronounced surface roughness was observedonly for films under compressive strains. The surface was flat under tension but rough under com-pression. Similar hardness with value about 20 GPa were observed in the W and WNx (x=0.3)films. This is thought to be due to the fact the grains are restricted to a very small size in the coat-ings. The higher coefficients of friction (0.4 for W and 0.9 for WN0.3) suggest that WN0.3 is not theoptimum phase. Finally, discussions are made with tribological test results.

  6. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  7. Chemical preparation and shock wave compression of carbon nitride precursors

    International Nuclear Information System (INIS)

    Two synthetic routes have been developed to produce high-molecular-weight organic precursors containing a high weight fraction of nitrogen. One of the precursors is a pyrolysis residue of melamine-formaldehyde resin. The second precursor is the byproduct of an unusual low-temperature combustion reaction of tetrazole and its sodium salt. These precursors have been shock compressed under typical conditions for diamond and wurtzite boron nitride synthesis in an attempt to recover a new ultrahard carbon nitride. The recovered material has been analyzed by X-ray diffraction, FTIR, and Raman microprobe analysis. Diamond is present in the recovered material. This diamond is well ordered relative to diamond shock synthesized from carbonaceous starting materials

  8. Preparation and characterization of sputtered boron nitride and boron carbide films and their modification by ion implantation

    International Nuclear Information System (INIS)

    Nanocrystalline cubic boron nitride and boron carbide films have been synthesized using sputtering. The relationship between the structures and properties as well as the influence of the deposition parameters, such as rf power, bias voltage, substrate temperature, composition and flow rate of the sputtering gas, on the structures and properties have been studied. The influence of the ion bombardment could be described by the specific ion momentum P*=[ion momentum.(ion flux/atom flux)]. The specific ion momentum was found to be proportional to the rf power and to the 1.5th power of the bias voltage. Two phases have been identified in our boron nitride films: hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN); the films were either single phase or contained a mixture of these two phases. Nanocrystalline boron films have been grown with a deposition rate of 2 nm/s not only on Si but also on hard metal (WC-6%Co) substrates. Stoichiometric and crystalline films have already been grown at room temperature (about 0.1 Tm, Tm=melting point-3900 K). All the films contained about 8 at% carbon and 6 at% oxygen as impurities, which come mainly from the targt. The concentration of the impurities is independent of the deposition paramters. The growth of c-BN appears after the specific ion momentum larger than a threshold value, which is dependent on the substrate temperature, composition and on the flow rate of the sputtering gas. The volume content of c-BN runs through a maximum value with increasing specific ion momentum. (orig.)

  9. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  10. Low temperature synthesis of silicon nitride thin films deposited by VHF/RF PECVD for gas barrier application

    Science.gov (United States)

    Lee, Jun S.; Shin, Kyung S.; Sahu, B. B.; Han, Jeon G.

    2015-09-01

    In this work, silicon nitride (SiNx) thin films were deposited on polyethylene terephthalate (PET) substrates as barrier layers by plasma enhanced chemical vapor deposition (PECVD) system. Utilizing a combination of very high-frequency (VHF 40.68 MHz) and radio-frequency (RF 13.56 MHz) plasmas it was possible to adopt PECVD deposition at low-temperature using the precursors: Hexamethyldisilazane (HMDSN) and nitrogen. To investigate relationship between film properties and plasma properties, plasma diagnostic using optical emission spectroscopy (OES) was performed along with the film analysis using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). OES measurements show that there is dominance of the excited N2 and N2+ emissions with increase in N2 dilution, which has a significant impact on the film properties. It was seen that all the deposited films contains mainly silicon nitride with a small content of carbon and no signature of oxygen. Interestingly, upon air exposure, films have shown the formation of Si-O bonds in addition to the Si-N bonds. Measurements and analysis reveals that SiNx films deposited with high content of nitrogen with HMDSN plasma can have lower gas barrier properties as low as 7 . 3 ×10-3 g/m2/day. Also at Chiang Mai University.

  11. Mathematical Model of Prediction of Nitrogen Pickup in Nitriding Process of Low Carbon Ferromanganese

    OpenAIRE

    Ghali, Saeed

    2014-01-01

    Low carbon ferromanganese was nitrided through gas-solid reaction. The nitriding process has been carried out on lab scale at temperature range 800°C–950°C at different nitrogen pressures. Temperature, time, and partial nitrogen pressure of nitriding process of fine low carbon ferromanganese were investigated. Nitrogen content, in weight percent, was more than 9%. MATLAB software was used to derive mathematical model to predict nitrogen content as a function of temperature and nitrogen pressu...

  12. 非晶碳氮纳米尖端的微结构和发光机理%Microstructure and Photoluminescence Mechanism of Amorphous Carbon Nitride Nanotips

    Institute of Scientific and Technical Information of China (English)

    王必本; 谢焕玲; 陈玉安; 董国波

    2012-01-01

    利用等离子体增强热丝化学气相沉积系统,用CH4、H2和N2为反应气体,在Si衬底上制备了碳氮纳米尖端.用扫描电子显微镜和显微Raman光谱仪对其进行了表征.在室温下测试了它的发光性能,发光谱由中心约为406 nm和506 nm的两条发光带组成.根据Raman散射谱,对其微结构进行了分析.结合非晶碳氮薄膜的结构和发光机理,分析了它的发光性能.%Carbon nitride nanotips were prepared on silicon substrate in plasma-enhanced hot fila ment chemical vapor deposition system, in which methane, hydrogen and nitrogen were used as the reaction gases. The carbon nitride nanotips were characterized by scanning electron microscopy and micro-Raman spectroscopy. The photoluminescence of the carbon nitride nanotips was measured at room temperature and the photoluminescence spectrum shows two emission bands at 406 and 506 nm. Combined with the Raman spectrum, the microstructure of the carbon nitride was analyzed. Ac cording to the structure and photoluminescence mechanism of amorphous carbon nitride films, the photoluminescence of carbon nitride nanotips was studied.

  13. Tribological studies of amorphous hydrogenated carbon films in a vacuum, spacelike environment

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1991-01-01

    Recent work on the adhesion and friction properties of plasma-deposited amorphous hydrogenated carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H) exhibiting diamondlike friction behavior. The plasma-deposited a-C:H films can be effectively used as hard lubricating films on ceramic materials such as silicon nitride in vacuum.

  14. Plasma-Chemical Synthesis of Nanosized Powders-Nitrides, Carbides, Oxides, Carbon Nanotubes and Fullerenes

    International Nuclear Information System (INIS)

    In this article the plasma-chemical synthesis of nanosized powders (nitrides, carbides, oxides, carbon nanotubes and fullerenes) is reviewed. Nanosized powders - nitrides, carbides, oxides, carbon nanotubes and fullerenes have been successfully produced using different techniques, technological apparatuses and conditions for their plasma-chemical synthesis. (plasma technology)

  15. Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

    CERN Document Server

    Li, Weifeng; Zhou, Hongcai; Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be achieved by modulating the nanopores under tensile strain. The water permeability can be improved by two orders of magnitude compared to RO membranes, which offers a promising approach to the global water shortage solution.

  16. Carbon nanotube quantum dots on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Baumgartner, A., E-mail: andreas.baumgartner@unibas.ch; Abulizi, G.; Gramich, J.; Schönenberger, C. [Institute of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel (Switzerland); Watanabe, K.; Taniguchi, T. [National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  17. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad

    2016-02-22

    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  18. Interacting Carbon Nitride and Titanium Carbide Nanosheets for High-Performance Oxygen Evolution.

    Science.gov (United States)

    Ma, Tian Yi; Cao, Jian Liang; Jaroniec, Mietek; Qiao, Shi Zhang

    2016-01-18

    Free-standing flexible films, constructed from two-dimensional graphitic carbon nitride and titanium carbide (with MXene phase) nanosheets, display outstanding activity and stability in catalyzing the oxygen-evolution reaction in alkaline aqueous system, which originates from the Ti-N(x) motifs acting as electroactive sites, and the hierarchically porous structure with highly hydrophilic surface. With this excellent electrocatalytic ability, comparable to that of the state-of-the-art precious-/transition-metal catalysts and superior to that of most free-standing films reported to date, they are directly used as efficient cathodes in rechargeable zinc-air batteries. Our findings reveal that the rational interaction between different two-dimensional materials can remarkably promote the oxygen electrochemistry, thus boosting the entire clean energy system. PMID:26629779

  19. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  20. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    International Nuclear Information System (INIS)

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  1. Electronic structure of carbon-boron nitride nanotubes

    Science.gov (United States)

    Sanginés-Mendoza, Raúl; Martinez, Edgar

    2013-03-01

    Structures of carbon and boron nitride nanotubes (CNTs, BNNTs) are quite similar, conversely, electronic properties are radically different from each other. Carbon nanotubes, whose electronic properties can be either metallic or semiconducting depending on their chiral structure, boron nitride nanotubes are always semiconductors with bandgaps over 4 eV. We have looked to hybrid systems, to predict a new kind of nanostructures with novel electronic properties. In this way, we explore the electronic properties of C-BN nanotubes. In particular, we studied the electronic structure of armchair C-BN nanotubes. The calculations were performed using the pseudopotential LCAO method with a Generalized Gradient Approximation for the exchange-correlation energy functional. The band structure of most of these systems have semiconductor character with an indirect gap smaller than its analogous BNNTs. In addition, the most prominent feature of these systems is the existence of flat bands both at the valence band top and at the conduction band minimum. Such flat bands results in sharp and narrow peaks on the total density of states. The behavior of these flat bands mainly indicates that electrons are largely localized. Thus, a detailed analysis on the electronic band structure shows that hybridization between those orbitals on the interfaces is responsible to exhibit localization effects on the hybrid systems.This research was supported by Conacyt under Grant No. 133022.

  2. Electrophoretic Deposition of Carbon Nitride Layers for Photoelectrochemical Applications.

    Science.gov (United States)

    Xu, Jingsan; Shalom, Menny

    2016-05-25

    Electrophoretic deposition (EPD) is used for the growth of carbon nitride (C3N4) layers on conductive substrates. EPD is fast, environmentally friendly, and allows the deposition of negatively charged C3N4 with different compositions and chemical properties. In this method, C3N4 can be deposited on various conductive substrates ranging from conductive glass and carbon paper to nickel foam possessing complex 3D geometries. The high flexibility of this approach enables us to readily tune the photophysical and photoelectronic properties of the C3N4 electrodes. The advantage of this method was further illustrated by the tailored construction of a heterostructure between two complementary C3N4, with marked photoelectrochemical activity. PMID:27148889

  3. Functional nanostructured titanium nitride films obtained by sputtering magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain)]. E-mail: olgas@icmm.csic.es; Hernandez-Velez, M. [Instituto de Ciencia de Materiales de Madrid (CSIC), or Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Dept. Fisica Aplicada C-XII, Universidad Autonoma, Cantoblanco 28049 Madrid (Spain); Navas, D. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Auger, M.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM-CSIC), Avda. Gregorio, del Amo 8, 28040 Madrid (Spain); Baldonedo, J.L. [Centro de Microscopia Electronica y Citometria de la Universidad Complutense de, Madrid (Spain); Sanz, R. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Pirota, K.R. [Instituto de Ciencia de Materiales de Madrid (CSIC), or Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Vazquez, M. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain)

    2006-01-20

    Development of new methods in the formation of hollow structures, in particular, nanotubes and nanocages are currently generating a great interest as a consequence of the growing relevance of these nanostructures on many technological fields, ranging from optoelectronics to biotechnology. In this work, we report the formation of titanium nitride (TiN) nanotubes and nanohills via reactive sputtering magnetron processes. Anodic Alumina Membranes (AAM) were used as template substrates to grow the TiN nanostructures. The AAM were obtained through electrochemical anodization processes by using oxalic acid solutions as electrolytes. The nanotubes were produced at temperatures below 100 deg. C, and using a pure titanium (99.995%) sputtering target and nitrogen as reactive gas. The obtained TiN thin films showed surface morphologies adjusted to pore diameter and interpore distance of the substrates, as well as ordered arrays of nanotubes or nanohills depending on the sputtering and template conditions. High Resolution Scanning Electron Microscopy (HRSEM) was used to elucidate both the surface order and morphology of the different grown nanostructures. The crystalline structure of the samples was examined using X-ray Diffraction (XRD) patterns and their qualitative chemical composition by using X-ray Energy Dispersive Spectroscopy (XEDS) in a scanning electron microscopy.

  4. Multipactor suppressing titanium nitride thin films analyzed through XPS and AES

    International Nuclear Information System (INIS)

    Cathodic-magnetron-deposited titanium nitride films were grown on anodized aluminum substrates and studied via AES and XPS spectroscopies to determine their depth-dependence composition. As it is well known, the native oxide grown on aluminum does not make the substrate impervious to radio frequency damage, and typically a thin film coating is needed to suppress substrate damage. In this article we present the profile composition of titanium nitride films, used as a protective coating for aluminum, that underwent prior conditioning through anodization, observed after successive sputtering stages. (Author)

  5. Optomechanical and Crystallization Phenomena Visualized with 4D Electron Microscopy: Interfacial Carbon Nanotubes on Silicon Nitride

    OpenAIRE

    Flannigan, David J.; Zewail, Ahmed H.

    2010-01-01

    With ultrafast electron microscopy (UEM), we report observation of the nanoscopic crystallization of amorphous silicon nitride, and the ultrashort optomechanical motion of the crystalline silicon nitride at the interface of an adhering carbon nanotube network. The in situ static crystallization of the silicon nitride occurs only in the presence of an adhering nanotube network, thus indicating their mediating role in reaching temperatures close to 1000 °C when exposed to a train of laser pulse...

  6. Strong coupling of sapphire surface polariton with aluminum nitride film phonon

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, V.A., E-mail: yakovlev@isan.troitsk.r [Institute for Spectroscopy of Russian Academy of Sciences, Troitsk, Moscow reg., 142190 (Russian Federation); Novikova, N.N.; Vinogradov, E.A. [Institute for Spectroscopy of Russian Academy of Sciences, Troitsk, Moscow reg., 142190 (Russian Federation); Ng, S.S.; Hassan, Z.; Hassan, H. Abu [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2009-06-22

    Surface polariton spectra of a thin (25 nm) aluminum nitride film on sapphire substrate have been measured using attenuated total reflection technique. Due to the strong coupling of sapphire substrate surface polariton with the film transverse optical phonon the splitting of the dispersion curve of sapphire surface polariton was found.

  7. Visible-light photocatalytic activity of nitrided TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Camps, Enrique, E-mail: enrique.camps@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, Mexico DF 11801 (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, Mexico DF 11801 (Mexico); Camacho-Lopez, Marco Antonio [Laboratorio de Investigacion y Desarrollo de Materiales Avanzados, Facultad de Quimica, UAEM, km 14.5 Carretera Toluca-Atlacomulco (Mexico); Casados, Dora A. Solis [Centro de Investigacion en Quimica Sustentable, Facultad de Quimica, UAEM, km 14.5 Carretera Toluca-Atlacomulco (Mexico)

    2010-10-25

    TiO{sub 2} thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO{sub 2} films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO{sub 2} and nitrided TiO{sub 2} films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO{sub 2} films had photocatalytic activity, while the unnitrided films did not.

  8. A Study of CVD of Gallium Nitride Films by In Situ Gas-Phase UV Spectroscopy

    OpenAIRE

    Alexandrov, S.; Kovalgin, A.; Krasovitskiy, D.

    1995-01-01

    Direct "in situ" UV spectroscopic analysis of the gas phase was performed during chemical vapour deposition of gallium nitride films based on pyrolysis of GaCl3NH3 complexes. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.

  9. Visible-light photocatalytic activity of nitrided TiO2 thin films

    International Nuclear Information System (INIS)

    TiO2 thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO2 films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO2 and nitrided TiO2 films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO2 films had photocatalytic activity, while the unnitrided films did not.

  10. Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

    Directory of Open Access Journals (Sweden)

    Isabelle Jauberteau

    2015-10-01

    Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

  11. Silicon nitride thin-films by RF sputtering : application on solid state lithium batteries

    OpenAIRE

    Sousa, R.; Ribeiro, J. F.; Sousa, J. A.; Montenegro, R. T.; L.M. Gonçalves; Correia, J.H.

    2013-01-01

    Silicon nitride is the most common barrier material to protect microsystems from atmosphere, usually deposited through CVD techniques. In this paper our aim is to highlight the advantages brought by using PVD techniques, namely RF sputtering, to deposit silicon nitride thin-films. In particular, we intend to protect microsystems fabricated only by PVD techniques and avoid the necessity of a second CVD chamber to do the microsystem coating. The influence of gases (Ar/N2) during deposition was ...

  12. Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oliphant, C.J. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Arendse, C.J., E-mail: cjarendse@uwc.ac.za [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Muller, T.F.G. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Jordaan, W.A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Knoesen, D. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa)

    2015-01-30

    Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas. - Highlights: • Tantalum filament degrades and fails during hot-wire CVD of silicon nitride thin films. • An encapsulating silicon nitride layer is deposited at the cooler ends. • Electron backscatter diffraction reveals Ta-silicides and -nitrides with a Ta core. • Filament failure occurs at hot centre regions due to different mechanical properties of Ta, its silicides and nitrides.

  13. Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

    International Nuclear Information System (INIS)

    Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas. - Highlights: • Tantalum filament degrades and fails during hot-wire CVD of silicon nitride thin films. • An encapsulating silicon nitride layer is deposited at the cooler ends. • Electron backscatter diffraction reveals Ta-silicides and -nitrides with a Ta core. • Filament failure occurs at hot centre regions due to different mechanical properties of Ta, its silicides and nitrides

  14. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr2N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W2N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W2N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films

  15. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Jagannadham, Kasichainula, E-mail: jag-kasichainula@ncsu.edu [Materials Science and Engineering North Carolina State University Raleigh, Raleigh, North Carolina 27695 (United States)

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  16. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    Science.gov (United States)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  17. Optical and Electronic Properties of 2D Graphitic Carbon-Nitride and Carbon Enriched Alloys

    Science.gov (United States)

    Therrien, Joel; Li, Yancen; Schmidt, Daniel; Masaki, Michael; Syed, Abdulmannan

    The two-dimensional form of graphitic carbon-nitride (gCN) has been successfully synthesized using a simple CVD process. In it's pure form, the carbon to nitrogen ratio is 0.75. By adding a carbon bearing gas to the growth environment, the C/N ratio can be increased, ultimately reaching the pure carbon form: graphene. Unlike attempts at making a 2D alloy system out of BCN, the CN system does not suffer from phase segregation and thus forms a homogeneous alloy. The synthesis approach and electronic and optical properties will be presented for the pure gCN and a selection of alloy compositions.

  18. Nano Indentation Inspection of the Mechanical Properties of Gold Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Armen Verdyan

    2007-10-01

    Full Text Available The morphology and the local mechanical properties of gold nitride thin films were studied by atomic force microscope (AFM. Gold nitride films were deposited for the first time on silicon substrate without any buffer layer at room temperature by reactive pulsed laser ablation deposition (RPLD. The films were fabricated on (100 Si wafers by RPLD technique in which KrF excimer laser was used to ablate a gold target in N2 atmosphere (0.1 GPa-100 Pa and ambient temperature. Scanning electron microscopy (SEM and atomic force microscopy inspections showed that the films were flat plane with rms roughness in the range of 35.1 nm-3.6 nm, depending on the deposition pressure. Rutherford backscattering spectrometry (RBS and energy dispersion spectroscopy (EDS used to detect the nitrogen concentration in the films, have revealed a composition close to Au3N. The film

  19. Proceedings of the symposium on silicon nitride and silicon dioxide thin insulating films

    International Nuclear Information System (INIS)

    This symposium volume is divided into five sections: Charge trapping in multilayer insulating films; New applications of insulating films: neural networks; silicon dioxide and silicon nitride films; Processing and radiation damage; and Hot carrier phenomena. A central theme of the symposium was the combined use of silicon nitride and silicon dioxide as a dielectric system. Silicon nitride often contains other species,such as oxygen, which form oxynitrides, and this leads to a wide variety of process recipes. A variety of standard applications are discussed, such as gate dielectrics in nonvolatile memory devices, interpoly dielectrics, and ultra-thin gate dielectrics for the next generation of devices. New applications are introduced, such as long time constant devices for new information processing circuits known as neural networks

  20. Graphitic carbon nitride "reloaded": emerging applications beyond (photo)catalysis.

    Science.gov (United States)

    Liu, Jian; Wang, Hongqiang; Antonietti, Markus

    2016-04-21

    Despite being one of the oldest materials described in the chemical literature, graphitic carbon nitride (g-C3N4) has just recently experienced a renaissance as a highly active photocatalyst, and the metal-free polymer was shown to be able to generate hydrogen under visible light. The semiconductor nature of g-C3N4 has triggered tremendous endeavors on its structural manipulation for enhanced photo(electro)chemical performance, aiming at an affordable clean energy future. While pursuing the stem of g-C3N4 related catalysis (photocatalysis, electrocatalysis and photoelectrocatalysis), a number of emerging intrinsic properties of g-C3N4 are certainly interesting, but less well covered, and we believe that these novel applications outside of conventional catalysis can be favorably exploited as well. Thanks to the general efforts devoted to the exploration and enrichment of g-C3N4 based chemistry, the boundaries of this area have been possibly pushed far beyond what people could imagine in the beginning. This review strives to cover the achievements of g-C3N4 related materials in these unconventional application fields for depicting the broader future of these metal-free and fully stable semiconductors. This review starts with the general protocols to engineer g-C3N4 micro/nanostructures for practical use, and then discusses the newly disclosed applications in sensing, bioimaging, novel solar energy exploitation including photocatalytic coenzyme regeneration, templating, and carbon nitride based devices. Finally, we attempt an outlook on possible further developments in g-C3N4 based research. PMID:26864963

  1. Phenyl-Modified Carbon Nitride Quantum Dots with Distinct Photoluminescence Behavior.

    Science.gov (United States)

    Cui, Qianling; Xu, Jingsan; Wang, Xiaoyu; Li, Lidong; Antonietti, Markus; Shalom, Menny

    2016-03-01

    A novel type of quantum dot (Ph-CN) is manufactured from graphitic carbon nitride by "lining" the carbon nitride structure with phenyl groups through supramolecular preorganization. This approach requires no chemical etching or hydrothermal treatments like other competing nanoparticle syntheses and is easy and safe to use. The Ph-CN nanoparticles exhibit bright, tunable fluorescence, with a high quantum yield of 48.4 % in aqueous colloidal suspensions. Interestingly, the observed Stokes shift of approximately 200 nm is higher than the maximum values reported for carbon nitride based fluorophores. The high quantum yield and the large Stokes shift are related to the structural surface organization of the phenyl groups, which affects the π-electron delocalization in the conjugated carbon nitride networks and induces colloidal stability. The remarkable performance of the Ph-CN nanoparticles in imaging is demonstrated by a simple incubation study with HeLa cells. PMID:26880237

  2. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    material is in a state of internal tension. The viscoelastic relaxation process for temperatures above 700 °C is dominated by the relaxation of this internal tension. A linear relation between the refractive index and material density is determined for silicon oxy-nitride with a nitrogen concentration......Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found. This...

  3. Influence of process parameters on properties of reactively sputtered tungsten nitride thin films

    International Nuclear Information System (INIS)

    Tungsten nitride (WNx) thin films were produced by reactive dc magnetron sputtering of tungsten in an Ar-N2 gas mixture. The influence of the deposition power on the properties of tungsten nitride has been analyzed and compared with that induced by nitrogen content variation in the sputtering gas. A combined analysis of structural, electrical and optical properties on thin WNx films obtained at different deposition conditions has been performed. It was found that at an N2 content of 14% a single phase structure of W2N films was formed with the highest crystalline content. This sputtering gas composition was subsequently used for fabricating films at different deposition powers. Optical analysis showed that increasing the deposition power created tungsten nitride films with a more metallic character, which is confirmed with resistivity measurements. At low sputtering powers the resulting films were crystalline whereas, with an increase of power, an amorphous phase was also present. The incorporation of an excess of nitrogen atoms resulted in an expansion of the W2N lattice and this effect was more pronounced at low deposition powers. Infrared analysis revealed that in WNx films deposited at low power, chemisorbed N2 molecules did not behave as ligands whereas at high deposition power they clearly appeared as ligands around metallic tungsten. In this study, the influence of the most meaningful deposition parameters on the phase transformation reaction path was established and deposition conditions suitable for producing thermally stable and highly crystalline W2N films were found.

  4. Evidence for a low-compressibility carbon nitride polymorph elaborated at ambient pressure and mild temperature

    OpenAIRE

    Goglio, Graziella; Foy, Denis; Pechev, Stanislav; Majimel, Jérôme; Demazeau, Gérard; Guignot, Nicolas; Andrault, Denis

    2009-01-01

    International audience Superhard materials like diamond are essential for abrasive or cutting tool applications. In this way, carbon nitrides are of relevant interest because they are expected to exhibit exceptional mechanical properties, high values of bulk modulus being predicted. A smart and simple method was used to synthesize carbon nitrides and allowed elaborating a low-compressibility polymorph. The processing consists in the decomposition of commercial thiosemicarbazide (H2NC(S)N2H...

  5. Group III-nitride thin films grown using MBE and bismuth

    Science.gov (United States)

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  6. Influence of strain on thermal conductivity of silicon nitride thin films

    International Nuclear Information System (INIS)

    We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)−1 at zero strain to 0.34 W (m K)−1 at about 2.4% tensile strain. We propose that such strong strain–thermal conductivity coupling is due to strain effects on fraction–phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens. (paper)

  7. Hydrogen Storage in Boron Nitride and Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Takeo Oku

    2014-12-01

    Full Text Available Boron nitride (BN nanomaterials were synthesized from LaB6 and Pd/boron powder, and the hydrogen storage was investigated by differential thermogravimetric analysis, which showed possibility of hydrogen storage of 1–3 wt%. The hydrogen gas storage in BN and carbon (C clusters was also investigated by molecular orbital calculations, which indicated possible hydrogen storage of 6.5 and 4.9 wt%, respectively. Chemisorption calculation was also carried out for B24N24 cluster with changing endohedral elements in BN cluster to compare the bonding energy at nitrogen and boron, which showed that Li is a suitable element for hydrogenation to the BN cluster. The BN cluster materials would store H2 molecule easier than carbon fullerene materials, and its stability for high temperature would be good. Molecular dynamics calculations showed that a H2 molecule remains stable in a C60 cage at 298 K and 0.1 MPa, and that pressures over 5 MPa are needed to store H2 molecules in the C60 cage.

  8. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    Science.gov (United States)

    Román, W. S.; Riascos, H.; Caicedo, J. C.; Ospina, R.; Tirado-Mejía, L.

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si3N4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm-2, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm-1 for B - N bonding and bands around 1700 cm-1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si3N4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si3N4/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  9. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    International Nuclear Information System (INIS)

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si3N4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm-2, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm-1 for B - N bonding and bands around 1700 cm-1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si3N4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si3N4/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  10. Ultrafast optical nonlinearity and photoacoustic studies on chitosan-boron nitride nanotube composite films

    Science.gov (United States)

    Kuthirummal, Narayanan; Philip, Reji; Mohan, Athira; Jenks, Cassidy; Levi-Polyachenko, Nicole

    2016-07-01

    Ultrafast optical nonlinearity in chitosan (CS) films doped with multi-walled boron nitride nanotubes (MWBN) has been investigated using 800 nm, 100 fs laser pulses, employing the open aperture Z-scan technique. Two-photon absorption coefficients (β) of CS-MWBN films have been measured at 800 nm by Z-scan. While chitosan with 0.01% MWBN doping gives a β value of 0.28×10-13 m/W, 1% doping results in a higher β value of 1.43×10-13 m/W, showing nonlinearity enhancement by a factor of 5. These nonlinearity coefficients are comparable to those reported for silver nanoclusters in glass matrix and Pt-PVA nanocomposites, indicating potential photonic applications for MWBN doped chitosan films. Characterization of the synthesized films using Fourier transform infrared photoacoustic spectroscopy (FTIR-PAS) reveals significant interactions between the NH and CO groups of chitosan with boron nitride.

  11. Radio frequency reactive sputtering for deposition of aluminium nitride thin films

    International Nuclear Information System (INIS)

    An aluminium target is reactively sputtered in an argon-nitrogen mixture. The influence of nitrogen on the electrical characteristics of the discharge are studied in the conducted experiments. Ionization is intensified in nitrogen, deposition rate is decreased in these conditions and a tentative interpretation is given. A study of nitridation is made and shows that synthesis reaction occurs on the substrate. For a set of deposition conditions, a critical rate of deposition is found. Below this rate, films are aluminium nitride. This critical rate is linearly depending on the amount of nitrogen in the gaseous mixture. Films are characterized as AlN by electrical, optical and crystallographic studies. Dielectric constant, losses, dielectric breakdown, optical index and infrared transmittance spectrum are investigated versus deposition parameters, particularly deposition rate and film thickness. Dielectric properties of AlN thin films prepared by RF reactive sputtering are interesting for use in microelectronics. (author)

  12. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    Science.gov (United States)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  13. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    Science.gov (United States)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  14. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  15. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  16. Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

    International Nuclear Information System (INIS)

    Graphical abstract: Highlights: · Simultaneous thermal oxidation and nitridation of sputtered Zr thin film on Si using N2O gas. · Oxidized and nitrided layers consisted of a stacked stoichiometric Zr-O (ZrO2) layer on an interfacial layer with related mixed compounds. · Model related to the oxidation and nitridation mechanisms. - Abstract: Formation of ZrO2 by simultaneous thermal oxidation and nitridation in nitrous oxide of sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate and followed by oxidation and nitridation in nitrous oxide ambient at 700 deg. C for various durations (5-20 min) have been systematically investigated. The structural and chemical properties of the samples were examined. Chemical depth profiles of the samples have been evaluated by X-ray photoelectron spectroscopy. Stoichiometric Zr-O (ZrO2) and its interfacial layer consisted of mixed sub-stoichiometric Zr-O, Zr-N, Zr-Si-O, Si-N, and/or Si-O-N phases were identified. A possible model related to the oxidation and nitridation mechanisms has been proposed and explained. Supportive results related to the model were obtained by energy filtered transmission electron microscopy, X-ray diffraction, Raman spectroscopy and Fourier Transform infrared analysis.

  17. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  18. Radio-frequency sputter deposition of boron nitride based thin films

    International Nuclear Information System (INIS)

    Thin films (∼2 μm) of boron nitride, titanium boron nitride, and titanium aluminum boron nitride have been grown on molybdenum, niobium, and cemented carbide substrates employing nonreactive as well as reactive rf magnetron sputter deposition from either a BN, a TiN-BN, or a TiN--AlN--BN target. Substrates have been rf biased, with dc potentials up to -200 V. By means of nonreactive sputtering mixed-phase structures with dominant phases B48B2N2 (using a BN target), or B48B2N2 and hexagonal Ti--B--N (using a TiN--BN or a TiN--AlN--BN target) are formed. Reactive deposition leads to the existence of hexagonal BN in all deposition modes. In the cases of Ti--B--N and Ti--Al--B--N films this phase is accompanied by fcc Ti--B--N. SEM cross sections revealed very fine grained to fracture-amorphous film structures. Hardness measurements gave the following maximum HV 0.02 values: B--N films 2800, Ti--B--N films 2750, and Ti--Al--B--N films 1650

  19. Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

    International Nuclear Information System (INIS)

    Sn nitride thin films are remarkable materials that can be implemented in applications such as microelectronic devices and recording media. This paper presents the analysis of the various Sn nitride thin films' structural, electrical, and chemical properties using a surface profiler, X-ray diffraction, a 4-point probe, X-ray photoelectron spectroscopy (XPS), and distilled water and ethylene glycol contact angle measurements. The Sn nitride thin films were prepared via radio frequency magnetron sputtering. The thickness of Sn nitride thin films decreased in the regions where N2 gas ratios ranged from 20% to 100%. The surface resistance decreased from 6.34 × 104 to 56.2 Ω/sq with gradual increasing of N2 gas ratios from 20% to 100%. Change in crystallinity of the films was observed as N2 gas was progressively introduced, from metallic Sn to the amorphous Sn nitride phase. The high resolution XPS spectra indicates that the intensity of Sn2+ increased, while those of Sn4+ and Sn0 decreased with increasing N2 gas ratios, confirming the bond formation of Sn and N. The total surface free energy (SFE) varied by changing the N2 gas ratio. When the N2 gas ratio in the sputter gas was low (less than 20%), the dominant contributing factor to the total SFE switched from polar to dispersive SFE. In samples where the N2 gas ratio was over 20%, the major contribution to the total SFE was dispersive SFE. - Highlights: • Control oxidation state of Sn and SnN. • Surface energy changed with N2 ratios. • The dominant phase of SnN was controlled by change of N2 gas ratio

  20. Ligand-Free Noble Metal Nanocluster Catalysts on Carbon Supports via "Soft" Nitriding.

    Science.gov (United States)

    Liu, Ben; Yao, Huiqin; Song, Wenqiao; Jin, Lei; Mosa, Islam M; Rusling, James F; Suib, Steven L; He, Jie

    2016-04-13

    We report a robust, universal "soft" nitriding method to grow in situ ligand-free ultrasmall noble metal nanocatalysts (UNMN; e.g., Au, Pd, and Pt) onto carbon. Using low-temperature urea pretreatment at 300 °C, soft nitriding enriches nitrogen-containing species on the surface of carbon supports and enhances the affinity of noble metal precursors onto these supports. We demonstrated sub-2-nm, ligand-free UNMNs grown in situ on seven different types of nitrided carbons with no organic ligands via chemical reduction or thermolysis. Ligand-free UNMNs supported on carbon showed superior electrocatalytic activity for methanol oxidation compared to counterparts with surface capping agents or larger nanocrystals on the same carbon supports. Our method is expected to provide guidelines for the preparation of ligand-free UNMNs on a variety of supports and, additionally, to broaden their applications in energy conversion and electrochemical catalysis. PMID:27014928

  1. Mesoporous Metal-Containing Carbon Nitrides for Improved Photocatalytic Activities

    Directory of Open Access Journals (Sweden)

    Jie Luo

    2013-01-01

    Full Text Available Graphitic carbon nitrides (g-C3N4 have attracted increasing interest due to their unusual properties and promising applications in water splitting, heterogeneous catalysis, and organic contaminant degradation. In this study, a new method was developed for the synthesis of mesoporous Fe contained g-C3N4 (m-Fe-C3N4 photocatalyst by using SiO2 nanoparticles as hard template and dicyandiamide as precursor. The physicochemical properties of m-Fe-C3N4 were thoroughly investigated. The XRD and XPS results indicated that Fe was strongly coordinated with the g-C3N4 matrix and that the doping and mesoporous structure partially deteriorated its crystalline structure. The UV-visible absorption spectra revealed that m-Fe-C3N4 with a unique electronic structure displays an increased band gap in combination with a slightly reduced absorbance, implying that mesoporous structure modified the electronic properties of g-Fe-C3N4. The photocatalytic activity of m-Fe-C3N4 for photodegradation of Rhodamine B (RhB was much higher than that of g-Fe-C3N4, clearly demonstrating porous structure positive effect.

  2. Mechanical properties of hybrid boron nitride-carbon nanotubes

    Science.gov (United States)

    Zhang, Jin; Wang, Chengyuan

    2016-04-01

    Hybrid boron nitride-carbon nanotubes (BN-CNTs) have attracted considerable attention in recent research. In this effort, molecular dynamics simulations were performed to study the fundamentals of BN-CNTs in tensile tests, i.e. Young’s modulus and fracture strength (strain). Particular attention was paid to the influence of the atomic structure, hybrid style, and BN concentration on the tensile properties. The morphological changes were also investigated for the BN-CNTs at the onset of fracture. It is noted that the Young’s modulus of BN-CNTs decreases almost linearly with increasing the BN concentration with a rate of change independent of the hybrid style. In contrast, the sensitivity of the fracture strength and fracture strain to the variation of BN concentration depends strongly on the hybrid style of BN-CNTs. These results are expected to significantly expand the knowledge of the elastic and fracture properties of novel nanostructures and facilitate their applications in bandgap-engineering.

  3. Synthesis of beta carbon nitride nanosized crystal through mechanochemical reaction

    CERN Document Server

    Yin Long Wei; Liu Yu Xian; Sui Jin Ling; Wang Jing Min

    2003-01-01

    Nanosized beta carbon nitride (beta-C sub 3 N sub 4), of grain size several tens of nanometres, has been synthesized by mechanochemical reaction processing. The low-cost synthetic method developed facilitates the novel and effective synthesis of nanosized crystalline beta-C sub 3 N sub 4 (a = 6.36 A, c = 4.648 A) powders. The graphite powders were first milled to a nanoscale state, then the nanosized graphite powders were milled in an atmosphere of NH sub 3 gas. It was found that nanosized beta-C sub 3 N sub 4 was formed after high-energy ball milling under an NH sub 3 atmosphere. After thermal annealing, the shape of the beta-C sub 3 N sub 4 changes from flake-like to sphere-like. The nanosized beta-C sub 3 N sub 4 formed was characterized by x-ray diffraction, Fourier transformation infrared spectroscopy, and transmission electron microscopy. A solid-gas reaction mechanism was proposed for the formation of nanosized beta-C sub 3 N sub 4 at room temperature induced by mechanochemical activation.

  4. Carbon film and its applications

    International Nuclear Information System (INIS)

    Diamond like carbon was prepared by the decomposition of methane in a microwave discharge. The effect of dilution gases, such as hydrogen, argon and helium, on the deposition was examined in the light of the identification of the deposits and the results of plasma diagnostics. When hydrogen was added, diamond like particles including large amounts of hydrogen were obtained. Diamond like films including graphitic carbon and a smaller amount of hydrogen were deposited from the methane-argon plasma. The correlation between the deposit and species present in the plasma is discussed. The deposition of diamond like carbon not including graphitic carbon from the methane-hydrogen plasma was succeeded because of the formation of CH3 radicals having sp3 hybrid orbital of carbon for diamond formation from the plasma and a removal of graphitic carbon from the deposit by sputtering. (author)

  5. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    Science.gov (United States)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  6. Negative effect of vacancies on cubic symmetry, hardness and conductivity in hafnium nitride films

    International Nuclear Information System (INIS)

    Although vacancies exist commonly in nonstoichiometric transition metal nitrides, their roles on structure and properties are not yet well explored. We show that in rocksalt hafnium nitride films creation of nitrogen and hafnium vacancies leads to an asymmetrical lattice contraction and distortion from cubic to rhombohedral structure owing to the presence of strong texture and compressive stress, and also causes decrease in hardness because of reduction in bulk modulus and decrease in electrical conductivity due to reduction in electron relaxation time. This new insight into vacancy-induced “negative effect” is demonstrated through good matches between our experiments and theoretical calculations

  7. Sapphire surface polariton splitting due to resonance with aluminum nitride film phonon

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, V A; Novikova, N N; Vinogradov, E A [Institute for Spectroscopy. Russian Academy of Sciences, 142190, Troitsk, Moscow reg. (Russian Federation); Ng, S S; Hassan, Z; Hassan, H A, E-mail: yakovlev@isan.troitsk.r [School of Physics. Universiti Sains Malaysia, 11800, Penang (Malaysia)

    2010-02-01

    Two thin aluminum nitride films have been prepared on sapphire substrates by molecular beam epitaxy technique. Then alkaline and acidic washing were used to remove the back-metal-coating of the sapphire substrate for one of the samples. (It caused also partial film dissolution). The surface polariton (SP) spectra have been measured by attenuated total reflection (ATR) technique. The measured SP dispersion is compared with one calculated using the literature film parameters. Due to the resonance interaction of sapphire substrate SP with the film transverse optical (TO) phonon the splitting of the dispersion curve of sapphire SP was found. The resonance takes place only for the frequency of the film TO phonon polarized along the surface of the anisotropic AlN film (perpendicular to the optical axis). The analysis of ATR and external reflectivity spectra shows the presence of some transition layer between the substrate and the film.

  8. Observation of ultraslow stress release in silicon nitride films on CaF2

    International Nuclear Information System (INIS)

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF2 crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiNx film on (111) CaF2 is larger than that of SiNx film with the same thickness on (100) CaF2. The velocities of SiNx film on both (100) and (111) CaF2 increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy

  9. Conformational analysis and electronic structure of chiral carbon and carbon nitride nanotubes

    Directory of Open Access Journals (Sweden)

    Cristiano Geraldo de Faria

    2011-12-01

    Full Text Available Geometry and electronic structure of chiral carbon and carbon nitride (CNx nanotubes were investigated through quantum chemical methods. Finite nanotubes with diameters ranging from 5 to 10 Å and containing up to 500 atoms were considered. CNx structures were built through random substitution of carbon atoms by nitrogen. The molecules were fully optimized by semi-empirical quantum chemical method (PM3. Our results show that the energy associated with nitrogen incorporation depends strongly upon the tube helicity and diameter. The doping of nanotubes with nitrogen contributes to reduce the stress caused by the small diameter of the studied systems. Density of States (DOS results for pure carbon and CNx nanostructures, obtained through DFT and Hartree-Fock calculations, were analyzed. The introduction of nitrogen in the tube produce states in the gap region which characterizes the metallic behavior, as expected for these systems after N-doping.

  10. Investigation on the structural and mechanical properties of anti-sticking sputtered tungsten chromium nitride films

    International Nuclear Information System (INIS)

    Tungsten chromium nitride (WCrN) thin films are prepared by dual-gun co-sputter process. As the surface coatings on the molding die for glass forming, WCrN films show less deterioration at high temperature than the conventional CrN coating. WCrN thin films are deposited via the reactive co-sputtering of Cr/W targets. The working pressure is kept at 2.66 Pa and the argon/nitrogen ratio is 10. Applied power of chromium is fixed and the applied power of tungsten is varied. Experimental results indicate that the atomic ratio of tungsten in the films increases with the applied power of tungsten. The dominant crystalline phase is chromium nitride when the tungsten target power is below 100 W, while tungsten nitride dominates in the film structure when the tungsten target power is beyond 200 W. A dense structure with much finer particles is developed as the tungsten power is 200 W. As the power is increased to 300 W, the particles become coarser in size. The film roughness exhibits a decreasing trend at low tungsten power and then increases as the tungsten power increased up to 300 and 400 W, presumably due to the phase change from chromium nitrides to tungsten nitrides. Further annealing of the WCrN thin films is simulated as the glass molding condition to check the anti-sticking property which is a critical requirement in molding die surface coating application. The WCrN thin film coating shows good anti-sticking property at 400 °C annealing when the tungsten target power is 200 W. - Highlights: ► WCrN films are deposited by dual sputtering of pure Cr and W targets. ► The covalent bonding character of WCrN films explains the difference in hardness. ► WCrN (200 W W-target-power/400 °C-annealing) exhibits the best anti-sticking performance

  11. Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Braccini, M., E-mail: muriel.braccini@simap.grenoble-inp.fr [SIMaP, Grenoble-INP/CNRS/UJF, BP 75, 38402 St Martin d' Hères cedex (France); Volpi, F. [SIMaP, Grenoble-INP/CNRS/UJF, BP 75, 38402 St Martin d' Hères cedex (France); Devos, A. [IEMN, UMR8250 CNRS, avenue Poincaré, BP 69, 59652 Villeneuve d' Ascq cedex (France); Raymond, G. [SIMaP, Grenoble-INP/CNRS/UJF, BP 75, 38402 St Martin d' Hères cedex (France); STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex (France); Benoit, D. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex (France); Morin, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles cedex (France); STMicroelectronics, Nanotech Center, 257 Fuller Road, 12208 Albany, NY (United States)

    2014-01-31

    Highly stressed silicon nitride thin films are used in gate first complementary metal oxide semiconductors to improve mobility in the silicon channel. Compressive stresses improve hole mobility in p-type MOS transistors while tensile stresses increase electron mobility in n-type MOS devices. High levels of compressive stress are easily reached in plasma enhanced chemical vapor deposited films by using the plasma power setting at a temperature compatible with the integration flow. Tensile stresses are more difficult to obtain with a plasma process because of the low temperatures required. Nevertheless, some post-treatments have been developed based on desorption of hydrogen that has been incorporated during the deposition step. The present study concerns one of those treatments consisting in a sequential deposition/nitrogen plasma treatment of elementary layers. Both nano-indentation and picosecond ultrasonic methods are used to measure the Young's modulus of the obtained silicon nitride thin films. The effect of the plasma treatment on the change in elastic modulus is investigated through the relationship with other properties like mass density and the concentration of Si-N bonds. - Highlights: • A picosecond ultrasonic method is used to measure the Young's modulus in thin films. • The Young's modulus is related to the silicon nitride film structure and chemistry. • A simple model allows describing the Young's modulus increase during N2 plasma treatment.

  12. Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

    International Nuclear Information System (INIS)

    Highly stressed silicon nitride thin films are used in gate first complementary metal oxide semiconductors to improve mobility in the silicon channel. Compressive stresses improve hole mobility in p-type MOS transistors while tensile stresses increase electron mobility in n-type MOS devices. High levels of compressive stress are easily reached in plasma enhanced chemical vapor deposited films by using the plasma power setting at a temperature compatible with the integration flow. Tensile stresses are more difficult to obtain with a plasma process because of the low temperatures required. Nevertheless, some post-treatments have been developed based on desorption of hydrogen that has been incorporated during the deposition step. The present study concerns one of those treatments consisting in a sequential deposition/nitrogen plasma treatment of elementary layers. Both nano-indentation and picosecond ultrasonic methods are used to measure the Young's modulus of the obtained silicon nitride thin films. The effect of the plasma treatment on the change in elastic modulus is investigated through the relationship with other properties like mass density and the concentration of Si-N bonds. - Highlights: • A picosecond ultrasonic method is used to measure the Young's modulus in thin films. • The Young's modulus is related to the silicon nitride film structure and chemistry. • A simple model allows describing the Young's modulus increase during N2 plasma treatment

  13. Bacterial adhesion studies on titanium, titanium nitride and modified hydroxyapatite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeyachandran, Y.L. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Venkatachalam, S. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Karunagaran, B. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Narayandass, Sa.K. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India)]. E-mail: sakndass@yahoo.com; Mangalaraj, D. [Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu (India); Bao, C.Y. [West China College of Stomatology, Sichuan University, Chengdu 610041 (China); Zhang, C.L. [West China College of Stomatology, Sichuan University, Chengdu 610041 (China)

    2007-01-15

    A qualitative study on adhesion of the oral bacteria Porphyromonas gingivalis on titanium (Ti), titanium nitride (TiN), fluorine modified hydroxyapatite (FHA) and zinc modified FHA (Zn-FHA) thin films is investigated. Ti and TiN thin films were deposited by DC magnetron sputtering and hydroxyapatite-based films were prepared by solgel method. The crystalline structure, optical characteristics, chemical composition and surface topography of the films were studied by XRD, optical transmission, XPS, EDAX and AFM measurements. The predominant crystallite orientation in the Ti and TiN films was along (002) and (111) of hcp and cubic structures, respectively. The Ti : O : N composition ratio in the surface of the Ti and TiN films was found to be 7 : 21 : 1 and 3 : 8 : 2, respectively. The atomic concentration ratio (Zn + Ca) / P in Zn-FHA film was found to be 1.74 whereby the Zn replaced 3.2% of Ca. The rough surface feature in modified HA films was clearly observed in the SEM images and the surface roughness (rms) of Ti and TiN films was 2.49 and 3.5 nm, respectively, as observed using AFM. The film samples were sterilized, treated in the bacteria culture medium, processed and analyzed using SEM. Surface roughness of the films was found to have least influence on the bacterial adhesion. More bacteria were observed on the TiN film with oxide nitride surface layer and less number of adhered bacteria was noticed on the Ti film with native surface oxide layer and on Zn-FHA film.

  14. Oxidation of nitride films in aqueous solution: Correlation between surface analysis and electrochemical studies

    International Nuclear Information System (INIS)

    Ac impedance and dc polarization tests of 304 stainless steels coated by cathodic arc plasma deposition (CAPD) titanium nitride and zirconium nitride were conducted in aqueous chloride solution. Cyclic polarization data suggested passive films were formed over the nitride coatings which are most likely hydrated titanium oxide and zirconium oxides. ESCA analysis of fresh samples and samples exposed during impedance tests indicated a layer rich in oxygen over the ZrN coating after exposure but not over TiN coating. Chemical shifts in the Zr 3d5/2 core electrons indicate transformation from ZrN to its oxide; the shifts in Ti 2P3/2 did not support the change from TiN to its oxide. The influence of these shifts on corrosion protection is documented

  15. Properties of Al-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Cu3N and AlxCu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ℃ substrate temperature by using a pure Cu and Al target, respectively. X-ray diffraction (XRD) measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted [111] preferred orientation. XRD shows that the growth of Al-doped copper nitride films (AlxCu3N) was affected strongly by doping Al, the intensity of [111] peak decreases with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N from crystallization. AFM shows that the surface of AlxCu3N film is smoother than that of Cu3N film. Compared with the Cu3N films, the resistivities of the Al-doped copper nitride films (AlxCu3N) have been reduced, and the microhardness has been enhanced.

  16. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    International Nuclear Information System (INIS)

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures

  17. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Facultad de Mecánica, Escuela Politécnica Nacional (EPN), Ladrón de Guevara E11-253, Quito (Ecuador); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Huerta, Lazaro [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Lartundo-Rojas, Luis [Centro de Nanociencias y Micro y Nanotecnologías—IPN, Luis Enrique Erro s/n, U. Prof. Adolfo López Mateos, 07738 Ciudad de Mexico, Distrito Federal (Mexico); Santoyo-Salazar, Jaime [Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07360 (Mexico); and others

    2015-03-15

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.

  18. Properties of GaN Films Obtained by Nitridation of Porous GaP (001)

    OpenAIRE

    Zburyn E.M.

    2012-01-01

    With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the anneal-ing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show...

  19. High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

    Science.gov (United States)

    Zhang, W. J.; Jiang, X.; Matsumoto, S.

    2001-12-01

    Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface.

  20. Optical and structural characterization of rapid thermal annealed non-stoichiometric silicon nitride film

    International Nuclear Information System (INIS)

    A detailed optical and structural characterization is carried out of a silicon nitride film deposited by a Hg-sensitized photo-CVD technique and subsequently subjected to rapid thermal annealing (RTA). An attempt has been made to correlate ellipsometry data with x-ray reflectivity (XRR) and x-ray diffraction data. Both the optical constants and density of the film were found to increase after thermal treatment. RTA treatment resulted in substantial change in the refractive index with more compaction of the film. This is explained in terms of hydrogen terminated defects/voids created due to predominant out-diffusion of hydrogen with RTA treatment

  1. Transparent ultrathin conducting carbon films

    International Nuclear Information System (INIS)

    Ultrathin conductive carbon layers (UCCLs) were created by spin coating resists and subsequently converting them to conductive films by pyrolysis. Homogeneous layers as thin as 3 nm with nearly atomically smooth surfaces could be obtained. Layer characterization was carried out with the help of atomic force microscopy, profilometry, four-point probe measurements, Raman spectroscopy and ultraviolet-visible spectroscopy. The Raman spectra and high-resolution transmission electron microscopy image indicated that a glassy carbon like material was obtained after pyrolysis. The electrical properties of the UCCL could be controlled over a wide range by varying the pyrolysis temperature. Variation in transmittance with conductivity was investigated for applications as transparent conducting films. It was observed that the layers are continuous down to a thickness below 10 nm, with conductivities of 1.6 x 104 S/m, matching the best values observed for pyrolyzed carbon films. Further, the chemical stability of the films and their utilization as transparent electrochemical electrodes has been investigated using cyclic voltammetry and electrochemical impedance spectroscopy.

  2. Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

    International Nuclear Information System (INIS)

    The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (ScxAl1−xN) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc0.41Al0.59N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc0.41Al0.59N film is higher than those of lead zirconate titanate and Pb(Mg1/3Nb2/3)O3-PbTiO3 films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc0.41Al0.59N film is due to the high d31 and the low relative permittivity.

  3. Deposition of diamondlike carbon films

    Science.gov (United States)

    Mirtich, M. J.; Sovey, J. S.; Banks, B. A. (Inventor)

    1984-01-01

    A diamondlike carbon film is deposited in the surface of a substrate by exposing the surface to an argon ion beam containing a hydrocarbon. The current density in the ion beam is low during initial deposition of the film. Subsequent to this initial low current condition, the ion beam is increased to full power. At the same time, a second argon ion beam is directed toward the surface of the substrate. The second ion beam has an energy level much greater than that of the ion beam containing the hydrocarbon. This addition of energy to the system increases mobility of the condensing atoms and serves to remove lesser bound atoms.

  4. Photoelectrochemical characterization of p-type silicon electrodes covered with tunnelling nitride dielectric films

    International Nuclear Information System (INIS)

    The photoelectrochemical behaviour of p-Si(100) single crystal electrodes in aqueous solution, covered with a very thin nitride film, was studied. The silicon surface nitridation was achieved in a N2-H2 plasma at floating potential. The as-grown insulating Si3N4 layers, with thickness inferior to 3.1 nm, allow the electrons to tunnel in the presence of an electric field by the Fowler-Nordheim tunnelling mechanism. However, the p-Si(100)/Si3N4-electrolyte interface generated lower photocurrent densities than those generated by naked p-Si(100) electrodes. In contrast, the nitridated silicon surface displayed a significant stability improvement in aqueous electrolyte (neutral pH). An overvoltage higher than 0.6 V for water oxidation on a p-Si(100) covered with a 2.4 nm Si3N4 layer was measured. The results show that silicon covered with a nitridated thin film may be useful to stabilize electrodes in photoelectrochemical applications

  5. Photoelectrochemical characterization of p-type silicon electrodes covered with tunnelling nitride dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Lana-Villarreal, T. [Laboratory of Electrocatalysis, UMR 6503, Universite de Poitiers, 40 Avenue du Recteur Pineau, 86022 Poitiers Cedex (France); Departament de Quimica Fisica and Institut Universitari d' Electroquimica, Universitat d' Alacant, Ap. 99, E-03080 Alacant (Spain); Straboni, A. [Laboratoire de Metallurgie Physique, UMR 6630, SP2MI, Universite de Poitiers, Boulevard Marie et Pierre Curie, Teleport 2, BP 30179, 86962 Futuroscope, Chasseneuil Cedex (France); Pichon, Luc [Laboratoire de Metallurgie Physique, UMR 6630, SP2MI, Universite de Poitiers, Boulevard Marie et Pierre Curie, Teleport 2, BP 30179, 86962 Futuroscope, Chasseneuil Cedex (France); Alonso-Vante, N. [Laboratory of Electrocatalysis, UMR 6503, Universite de Poitiers, 40 Avenue du Recteur Pineau, 86022 Poitiers Cedex (France)]. E-mail: nicolas.alonso.vante@univ-poitiers.fr

    2007-06-25

    The photoelectrochemical behaviour of p-Si(100) single crystal electrodes in aqueous solution, covered with a very thin nitride film, was studied. The silicon surface nitridation was achieved in a N{sub 2}-H{sub 2} plasma at floating potential. The as-grown insulating Si{sub 3}N{sub 4} layers, with thickness inferior to 3.1 nm, allow the electrons to tunnel in the presence of an electric field by the Fowler-Nordheim tunnelling mechanism. However, the p-Si(100)/Si{sub 3}N{sub 4}-electrolyte interface generated lower photocurrent densities than those generated by naked p-Si(100) electrodes. In contrast, the nitridated silicon surface displayed a significant stability improvement in aqueous electrolyte (neutral pH). An overvoltage higher than 0.6 V for water oxidation on a p-Si(100) covered with a 2.4 nm Si{sub 3}N{sub 4} layer was measured. The results show that silicon covered with a nitridated thin film may be useful to stabilize electrodes in photoelectrochemical applications.

  6. Influence of plasma nitriding on the hardness of AISI 304 and low carbon steel

    International Nuclear Information System (INIS)

    Nitriding with plasma/ion nitriding technique for surface treatment of AISI 304 and low carbon steel as a machine component material has been done. Surface treatment is meant to improve the surface quality of metal especially its hardness. To reach the optimum condition it has been done a variation of nitriding pressure, while to analyse the result it has been done the hardness and microstructure test, and the nitrogen content. Result of the test indicates that: the optimum hardness obtained at 1.8 mbar of pressure that is 624.9 VHN or 2.98 times while the initial hardness is 210.3 VHN for AISI 304 and 581.6 VHN or 3.07 times compare with initial hardness 142.9 VHN for low carbon steel. The thickness of nitride layer for AISI 304 and low carbon steel is around 30 µm. Nitrogen contents after nitriding are 10.74% mass or 30.32% atom for AISI 304 and 6.81% mass or 21.76% atom for low carbon steel. (author)

  7. Preparation of carbon nitride materials by polycondensation of the single-source precursor aminodichlorotriazine (ADCT)

    International Nuclear Information System (INIS)

    Carbon nitride, usually described as C3N4 or CNx (x > 1), has been reported to form disordered network structures. In this work we describe a new synthesis route using 2-amino-4,6-dichloro-s-triazine (ADCT) as a single-source precursor, adopting single step and two step decompositions. During two step polycondensation ADCT is first heated in a closed system and than fully condensed under vacuum. Our reactions yielded carbon nitride materials having compositions near C3N4. The obtained carbon nitride occurs as a brown, amorphous solid according to X-ray and electron diffraction experiments. Moreover, infrared spectra and results from 13C-NMR measurements indicate evidence for the presence of bridged heptazine and triazine units in the structure

  8. Self-Sensitized Carbon Nitride Microspheres for Long-Lasting Visible-Light-Driven Hydrogen Generation.

    Science.gov (United States)

    Gu, Quan; Gao, Ziwei; Xue, Can

    2016-07-01

    A new type of metal-free photocatalyst is reported having a microsphere core of oxygen-containing carbon nitride and self-sensitized surfaces by covalently linked polymeric triazine dyes. These self-sensitized carbon nitride microspheres exhibit high visible-light activities in photocatalytic H2 generation with excellent stability for more than 100 h reaction. Comparing to the traditional g-C3 N4 with activities terminated at 450 nm, the polymeric triazine dyes on the carbon nitride microsphere surface allow for effective wide-range visible-light harvesting and extend the H2 generation activities up to 600 nm. It is believed that this new type of highly stable self-sensitized metal-free structure opens a new direction of future development of low-cost photocatalysts for efficient and long-term solar fuels production. PMID:27225827

  9. Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

    Science.gov (United States)

    Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

    2016-04-01

    Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

  10. Investigation on uranium and plutonium nitrides with low oxygen and carbon contents

    International Nuclear Information System (INIS)

    Uranium nitride (UN) and uranium-plutonium nitride (UO.8Pu0.2N) with various oxygen impurity levels, up to 20.000 10-6 weight ratio, was studied. The strong affinity of these nitrides for the oxygen avoids to synthesize pure compounds (no oxygen) by direct combination of the elements or from hydride. The process expected to be used in nuclear fuel industry was chosen. The nitride was prepared by carboreduction and nitridation of the oxide, then ground with different amounts of oxide. The powder obtained was cold pressed and sintered (T = 17200C - 18000C ; t > 15 hours). Analysis of carbon and oxygen content, X ray diffraction measurements, ceramography and electronprobe microanalysis were used to characterize the pellets. The main results are: The oxide (UO2 or MO2) forms at temperatures higher than about 11500C, an oxinitride in contact with nitride matrix (UN or MN), only under nitrogen. This oxinitride, isomorphous with UO2 crystal, is stable up to 17500C with nitride matrix, under a pressure of 1 bar. During the cooling the oxinitride is decomposed in UO2 and U2N3+x. This mixed oxinitride of U and Pu was observed for the first time. The plutonium content of this solid solution is twice smaller than in the nitride matrix. The solubility limit of oxygen in the UN and U0.8Pu0.2N is less than 1000.10-6 weight ratio. This value is lower than published results. The lattice parameter of UN increases in ratio with carbon content, but no noticeable influence of oxygen was detected. This lattice parameter, for UN saturated with oxygen, is 0.48887 ± 5.10-5 nm

  11. Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

    International Nuclear Information System (INIS)

    Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride

  12. Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process

    International Nuclear Information System (INIS)

    Fe-N thin films were fabricated using a direct current magnetron sputtering process assisted by a radio-frequency (rf) field. The effect of the rf field on the phase composition of the films was investigated. The results indicate that with the assistance of the rf field, various kinds of iron nitrides can be obtained in the films, including α'-Fe-N, α''-Fe16N2, ξ-Fe2N, ε-Fe3N, and γ''-FeN with ZnS structure. It was found that the rf field greatly benefits the formation of iron nitrides in the Fe-N films

  13. Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

    International Nuclear Information System (INIS)

    There are higher technical requirements for protecting layer of magnetic heads and disks used in future high-density storage fields. In this paper, ultra-thin (2 nm thickness) tetrahedral amorphous carbon (ta-C) films were firstly prepared by filtered cathodic vacuum arc (FCVA) method, then a series of nitriding treatments were performed with nitrogen plasma generated using electron cyclotron resonance (ECR) microwave source. Here it highlighted the influence of nitrogen flow and applied substrate bias voltage on the structural characteristics of ta-C films during the plasma nitriding process. The chemical compositions, element depth distribution profiles, physical structures and bonding configurations of plasma-nitrided ta-C films were investigated by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and UV-vis Raman spectroscopy. The experimental results show that the carbon nitride compounds (CNx) are formed in nitrogenated ta-C films in which the N content and its depth distribution depends on bias voltage to large extent rather than N2 flow. The N content of nitrogenated ta-C films can reach 16 at.% for a substrate bias of -300 V and a N2 flow of 90 sccm. With increasing nitrogen content, there is less G peak dispersion and more ordering of structure. Furthermore, appropriate nitriding treatment (substrate bias: -100 V, N2 flow: 150 sccm) can greatly increase the fraction of sp3 and sp3C-N bonds, but the values begin to fall when the N content is above 9.8 at.%. All these indicate that suitable ECR-assisted microwave plasma nitriding is a potential modification method to obtain ultra-thin ta-C films with higher sp3 and sp3C-N fractions for high-density magnetic storage applications.

  14. Thermally activated reactions of boron nitride nanotubes with C60 fullerene: a Raman study of boron nitride-carbon nanotube composites

    International Nuclear Information System (INIS)

    Full text: Boron nitride nanotubes (BNNT) are topological analogues to single wall carbon nanotubes (SWCNT). LiKEX the latter one expects that boron nitride nanotubes can be filled with fullerenes to maKEX BN-carbon peapods. This opens new possibilities of generating nanostructures with interesting physical properties. BNNTs were first heat treated in air to open the ends and to remove excess boron particles. We analysed and refined the filling process for SWCNTs and applied it to the BNNTs. For the carbon system critical conditions were determined for opening of tube ends. Filling with C60 fullerene via vapour phase was applied. Subsequently high temperature treatment was performed to transform the fullerenes in a carbon nanotube. We performed multi-frequency Raman spectroscopy to follow the process. Some spectral features of the reaction product in the low frequency range may be assigned to small diameter carbon nanotubes inside the boron nitride nanotubes. (author)

  15. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    OpenAIRE

    S. Reboh; Morin, P.; Hÿtch, M. J.; Houdellier, F.; Claverie, A

    2013-01-01

    To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate ...

  16. Hydrogen production using zinc-doped carbon nitride catalyst irradiated with visible light

    OpenAIRE

    Bing Yue, Qiuye Li, Hideo Iwai, Tetsuya Kako and Jinhua Ye

    2011-01-01

    Recently, graphitic carbon nitride (g-C3N4) has been investigated as a photocatalyst for water splitting and organic dye degradation. In this study, we have developed a simple soft-chemical method of doping Zn into g-C3N4 to prepare a metal-containing carbon nitride. The doping was confirmed by x-ray photoelectron spectroscopy, and diffusion reflectance spectra revealed a significant red shift in the absorption edge of Zn/g-C3N4. This hybrid material shows high photocatalytic activity and goo...

  17. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  18. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    Energy Technology Data Exchange (ETDEWEB)

    Yin, H., E-mail: hyin@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); Ziemann, P. [Institute of Solid State Physics, Ulm University, D-89069 Ulm (Germany)

    2014-06-23

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (10{sup 2} cm{sup 2}/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  19. Formation and characterization of titanium nitride and titanium carbide films prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Titanium has been reactively r.f. sputtered in mixed Ar-N2 and Ar-CH4 discharges on to substrates held at 775 K. The films obtained have been characterized by scanning electron microscopy, X-ray diffraction and by measurements of hardness and electrical resistivity. The compositions of the films have been determined using Auger electron spectroscopy. The processes occurring both on substrates and target surfaces have been studied and it is shown that the latter is of great importance for the composition and structure of deposited films. Titanium nitride films of full density and with electrical resistivity and hardness values close to those of bulk TiN were only obtained in a narrow range close to the stoichiometric composition. Titanium carbide films grown on non-biased substrates were found to have an open structure and thus a low density. A bias applied to the substrate, however, improved the quality of the films. It is also shown that the heat of formation of the compounds plays an important role in the formation of carbides and nitrides. A large value promotes the development of large grains and dense structures. (Auth.)

  20. Plasma etching of virtually stress-free stacked silicon nitride films

    International Nuclear Information System (INIS)

    Stacked silicon nitride films for use in manufacturing of surface micromachined membranes were deposited using custom made plasma-enhanced chemical vapor deposition instrument with silane (SiH4) and ammonia (NH3) gas mixture as deposition precursor. Deposition conditions were adjusted by varying substrate temperature and SiH4 to NH3 flow ratio and temperature to obtain the required stress related and electrical properties of the membranes. Transmission Fourier transformed infrared spectroscopy and scanning electron microscopy were used to investigate the chemical composition and morphology of the stacked film components. An increase in the SiH4 to NH3 flow ratio and a decrease in temperature resulted in a silicon-rich silicon nitride film, as well as an increased silicon oxide concentration. To avoid underetch and sidewall defects, the plasma power density during the plasma etching was changed from 0.5 W/cm2 during the etching of both top and bottom layers in a stacked film, to 1.0 W/cm2 during the etching of the middle both silicon and silicon oxide rich film. This resulted in an improved overall stacked film sidewall quality and reduced the unwanted underetch.

  1. Reactive magnetron sputter deposition of superconducting niobium titanium nitride thin films with different target sizes

    CERN Document Server

    Bos, B G C; Haalebos, E A F; Gimbel, P M L; Klapwijk, T M; Baselmans, J J A; Endo, A

    2016-01-01

    The superconducting critical temperature (Tc>15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100 mm diameter) system and a large target (127 mm x 444.5 mm) one, with the aim of improving the film uniformity using the large target system. We focus on the Tc of the films and I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc>15 K. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system'...

  2. Strong amorphization of high-entropy AlBCrSiTi nitride film

    International Nuclear Information System (INIS)

    Amorphous coatings, particular nitride systems, are of interest for numerous practical applications. Nevertheless, at present only a few amorphous nitride coating systems have been considered, the most notably being the (TM, Si)N system (transition metal (TM) = Ti, Zr, W, Mo). The present study provides an alternative approach for producing amorphous nitride films with high thermal stability up to 700 °C for 2 h. Films are deposited from an equimolar AlBCrSiTi target in various argon/nitrogen atmospheres at different substrate temperatures. It is found that above the nitrogen flow ratio (i.e. RN = N2/N2 + Ar) of 28.6% a near equal ratio between target elements and nitrogen is approached, thus indicating the coatings have the chemical formula of (AlBCrSiTi)N. The glancing-angle X-ray diffractometer and transmission electron microscope investigations indicate that the coatings, regardless of nitrogen concentration or deposition temperature (up to 500 °C), are amorphous. Thermal treatment shows that the amorphous structure of this (AlBCrSiTi)N coating is maintained up to 700 °C when annealing for 2 h in vacuum. At annealing temperatures of 800 °C and above, the amorphous films transform into a simple NaCl-type face-centered cubic solid solution. Even after annealing at 1000 °C for 2 h, the grain size is only 2 nm. High entropy effect, large lattice distortion effect, and sluggish diffusion effect are proposed to account for the formation of amorphous nitrides. - Highlights: ► Films are deposited from an equimolar AlBCrSiTi target in various argon/nitrogen atmospheres at different substrate temperatures. ► We provide an alternative approach for producing amorphous nitride films with high thermal stability up to 700 oC for 2 h. ► At annealing temperatures of 800 oC and above, the amorphous films transform into a simple NaCl-type face-centered cubic solid solution. ► Even after annealing at 1000 °C for 2 h, the grain size is only 2 nm.

  3. Fabrication of particular structures of hexagonal boron nitride and boron-carbon-nitrogen layers by anisotropic etching

    Science.gov (United States)

    Vishwakarma, Riteshkumar; Sharma, Subash; Shinde, Sachin M.; Sharma, Kamal P.; Thangaraja, Amutha; Kalita, Golap; Tanemura, Masaki

    2016-05-01

    Anisotropic etching of hexagonal boron nitride (h-BN) and boron-carbon-nitrogen (BCN) basal plane can be an exciting platform to develop well-defined structures with interesting properties. Here, we developed an etching process of atomically thin h-BN and BCN layers to fabricate nanoribbons (NRs) and other distinct structures by annealing in H2 and Ar gas mixture. BCN and h-BN films are grown on Cu foil by chemical vapor deposition (CVD) using solid camphor and ammonia borane as carbon, nitrogen and boron source, respectively. Formation of micron size well-defined etched holes and NRs are obtained in both h-BN and BCN layers by the post growth annealing process. The etching process of h-BN and BCN basal plane to fabricate NRs and other structures with pronounced edges can open up new possibilities in 2D hybrid materials.

  4. Process characterization and properties of titanium nitride films prepared by the linear magnetron sputtering system

    International Nuclear Information System (INIS)

    The paper describes a new type of the planar magnetron sputtering system having a double-sided opened configuration of the magnetic field (so-called linear magnetron) and its application for thin films deposition. The structure of this magnetron sputtering source is shown. Relationships occurring between the length of a magnetic trap and its characteristics are described and the influence of changes in pressure on breakdown voltage is determined. Also the results of the experimental investigation of coating parameters and the corresponding physical properties (e.g. morphology, thickness distribution, reflectance curves) of titanium nitride layers are given for the film deposited in different coating zones. (author). 9 refs., 4 Figs

  5. Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

    International Nuclear Information System (INIS)

    We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si3N4, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 μm2) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques

  6. Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Merchant, A.R.; McCulloch, D.; McKenzie, D.R.; Yin, Y.; Gerstner, E.G. [New South Wales Univ., Kensington, NSW (Australia)

    1996-12-31

    Carbon nitride materials have been the focus of research efforts worldwide. Most materials studied have been amorphous, with only a few groups claiming to have found a crystalline material. In this paper, carbon nitride materials prepared by two different techniques are analysed, and found to be remarkably similar in bonding and structure. The materials appear to have a primarily sp{sup 2} bonded carbon structure with a lower bond length than found in an amorphous carbon. This is explained by nitrogen substituting into `rings` to a saturation level of about one nitrogen per three carbon atoms. No evidence was found for a crystalline structure of formula C{sub 3}N{sub 4}, or any amorphous derivative of it. 16 refs., 1 tab., 5 figs.

  7. Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantation

    International Nuclear Information System (INIS)

    Carbon nitride materials have been the focus of research efforts worldwide. Most materials studied have been amorphous, with only a few groups claiming to have found a crystalline material. In this paper, carbon nitride materials prepared by two different techniques are analysed, and found to be remarkably similar in bonding and structure. The materials appear to have a primarily sp2 bonded carbon structure with a lower bond length than found in an amorphous carbon. This is explained by nitrogen substituting into 'rings' to a saturation level of about one nitrogen per three carbon atoms. No evidence was found for a crystalline structure of formula C3N4, or any amorphous derivative of it. 16 refs., 1 tab., 5 figs

  8. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  9. Structural characterization of thin films of titanium nitride deposited by laser ablation

    International Nuclear Information System (INIS)

    Thin films of titanium nitride were deposited using the technique of laser ablation. It was studied the effect of the density of laser energy used for ablation the target as well as of the pressure of the work gas about the structure and the hardness of the deposited thin films. Depending on the pressure of the work gas films was obtained with preferential orientation in the directions (200) and (111). At a pressure of 1 x 10-2 Torr only the direction (200) was observed. On the other hand to the pressure of 5 x 10-3 Torr the deposited material this formed by a mixture of the orientation (200) and (111), being the direction (111) the predominant one. Thin films of Ti N were obtained with hardness of up to 24.0 GPa that makes to these attractive materials for mechanical applications. The hardness showed an approximately linear dependence with the energy density. (Author)

  10. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    International Nuclear Information System (INIS)

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber. (paper)

  11. The electrical properties of sulfur-implanted cubic boron nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Qin Yang; Kong Le; Yang Xue-Liang; Li Ting; Zhao Wei-Ping; Yang Ping

    2012-01-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions.The implantation energy of the ions is 19 keV,and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2.The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃.The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders,and the activation energy of c-BN thin films is 0.18 eV.

  12. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Large-area MgB2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  13. Behavior of joining interface between thin film metallic glass and silicon nitride at heating

    International Nuclear Information System (INIS)

    Thin film metallic glass is usually deposited directly on a substrate. The strength of the adhesive join between the substrate surface and the thin film metallic glass is important for fabrication of micro- and/or nano-electromechanical systems. The strength of the join is especially affected by the stresses at the interface, created by the thermal history during the fabrication process and/or during use. In the present study, a bimetallic cantilever of silicon nitride film with a Pd-based thin film metallic glass was fabricated and heated under vacuum in order to generate high stresses at the joining interface. The behavior at the interface were observed and analyzed in terms of the projected length of the cantilever

  14. Innovative technique for tailoring intrinsic stress in reactively sputtered piezoelectric aluminum nitride films

    International Nuclear Information System (INIS)

    Novel technical and technological solutions enabling effective stress control in highly textured polycrystalline aluminum nitride (AlN) thin films deposited with ac (40 kHz) reactive sputtering processes are discussed. Residual stress in the AlN films deposited by a dual cathode S-Gun magnetron is well controlled by varying Ar gas pressure, however, since deposition rate and film thickness uniformity depend on gas pressure too, an independent stress control technique has been developed. The technique is based on regulation of the flux of the charged particles from ac plasma discharge to the substrate. In the ac powered S-Gun, a special stress adjustment unit (SAU) is employed for reducing compressive stress in the film by means of redistribution of discharge current between electrodes of the S-Gun leading to controllable suppression of bombardment of the growing film. This technique is complementary to AlN deposition with rf substrate bias which increases ion bombardment and shifts stress in the compressive direction, if required. Using SAU and rf bias functions ensures tailoring intrinsic stress in piezoelectric AlN films for a particular application from high compressive -700 MPa to high tensile +300 MPa and allows the gas pressure to be adjusted independently to fine control the film uniformity. The AlN films deposited on Si substrates and Mo electrodes have strong (002) texture with full width at half maximum ranging from 2 degree sign for 200 nm to 1 degree sign for 2000 nm thick films.

  15. Electrical and optical properties of silicon-doped gallium nitride polycrystalline films

    Indian Academy of Sciences (India)

    S R Bhattacharyya; A K Pal

    2008-02-01

    Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (ℎ-GaN) while films deposited at 623 K were predominantly cubic (-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott’s hopping for films containing -GaN while Efros and Shklovskii (E–S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing ℎ-GaN. A crossover from Mott’s hopping to E–S hopping in the `soft’ Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ∼ 2.73 eV to that for peak at ∼ 3.11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.

  16. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  17. Carbon nitride deposition onto steel substrates by radio frequency plasma assisted pulsed laser deposition with substrate heating

    International Nuclear Information System (INIS)

    Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp3 / (sp2 + sp3) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40 W of RF power and 673 K of substrate temperature. The maximum adhesion strength of 14.8 MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94 GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished no. 150 at 40 W of RF power and 673 K of substrate temperature.

  18. Carbon nitride deposition onto steel substrates by radio frequency plasma assisted pulsed laser deposition with substrate heating

    Energy Technology Data Exchange (ETDEWEB)

    Yasui, Toshiaki, E-mail: yasui@me.tut.ac.jp [Department of Mechanical Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Kimura, Shingo [Department of Production Systems Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Nishikawa, Ryutaro; Fukumoto, Masahiro [Department of Mechanical Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2012-11-15

    Carbon nitride (CNx) films are promising candidates for tribological application due to its low friction coefficient. However, the adhesion strength of the film on steel substrate was poor at elevated temperature during deposition. In this study, CNx film was fabricated on bearing steel (SUJ2) and austenitic stainless steel (AISI304) substrates with radio frequency (RF) plasma assisted pulsed laser deposition in nitrogen gas atmosphere. Adhesion strength of the film on the steel substrates was improved by blasting or polishing of the substrate surface before deposition. Thick CNx film was deposited on the steel substrates by substrate heating and substrate pretreatment. The atomic composition ratio of N/C and the bonding ratio of sp{sup 3} / (sp{sup 2} + sp{sup 3}) increased with substrate temperature. Maximum atomic composition ratio of N/C was 0.155 on SUJ2 substrate and 0.171 on AISI304 substrate at 40 W of RF power and 673 K of substrate temperature. The maximum adhesion strength of 14.8 MPa was obtained at blasted SUJ2 substrate. The maximum knoop hardness of 8.94 GPa and the lowest friction coefficient of 0.072 were obtained on SUJ2 substrate with polished no. 150 at 40 W of RF power and 673 K of substrate temperature.

  19. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  20. Kinetics and film properties of boron nitride derived from trimethoxyborane/ammonia by chemical vapor deposition

    International Nuclear Information System (INIS)

    The kinetics of the CVD of boron nitride from trimethoxyborane (TMOB) and ammonia (NH3) under atmospheric pressure was investigated by varying the following process parameters: temperature, residence time of the reactants, molar fraction of TMOB, and the NH3/TMOB ratio, γ. A kinetic power law equation was derived, that describes the experimental results with good accuracy. The reaction order with respect to TMOB is found to be 0.9 and -0.2 with respect to NH3. Between 800 C and 950 C, the deposition rate is controlled by the surface reaction kinetics with apparent activation energy of 115.1 kJ mol-1. The deposited BN films were characterized by IR spectroscopy, Raman spectroscopy, and X-ray diffraction (XRD). The microstructure of the deposits depends on the nature of the substrates used. Turbostratic boron nitride (t-BN) was deposited on graphite, and hexagonal boron nitride (h-BN) on alumina substrates. X-ray photoelectron spectroscopy (XPS) analyses show nearly stoichiometric BN films for deposition temperatures in the range 850-950 C for high amounts of ammonia (100< γ <150) in the feed gas. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  1. Cobalt oxide and nitride particles supported on mesoporous carbons as composite electrocatalysts for dye-sensitized solar cells

    Science.gov (United States)

    Chen, Ming; Shao, Leng-Leng; Gao, Ze-Min; Ren, Tie-Zhen; Yuan, Zhong-Yong

    2015-07-01

    The composite electrocatalysts of cobalt oxide/mesoporous carbon and cobalt nitride/mesoporous carbon are synthesized via a convenient oxidation and subsequent ammonia nitridation of cobalt particles-incorporated mesoporous carbon, respectively. The cobalt oxide and nitride particles are uniformly imbedded in mesoporous carbon matrix, forming the unique composites with high surface area and mesopore architecture, and the resultant composites are evaluated as counter electrode materials, exhibiting good catalytic activity for the reduction of triiodide. The composites of cobalt nitride and mesoporous carbon are superior to the counterparts of cobalt oxide and mesoporous carbon in catalyzing the triiodide reduction, and the dye-sensitized solar cell with the composites achieves an optimum power conversion efficiency of 5.26%, which is comparable to the one based on the conventional Pt counter electrode (4.88%).

  2. Identification and thermodynamic mechanism of the phase transition in hafnium nitride films

    International Nuclear Information System (INIS)

    A stoichiometry-driven phase transition from rocksalt to “nitrogen-rich” structure exists in group-IVB transition metal nitride films. As this phase transition is critical in controlling the film properties it has attracted numerous studies. However, researchers are still divided with regard to the structural identity of this “nitrogen-rich” phase, not to mention detailed exploration of the phase transition mechanisms. In this study, we confirmed that the “nitrogen-rich” phase in hafnium nitride (HfNx) films had a cubic Th3P4 structure of space group symmetry of I-43d (220), namely c-Hf3N4. The confirmation was obtained by combining the first-principle calculations with a series of experiments: Selected Area Electron Diffraction, High Resolution Transmission Electron Microscopy, Raman, Gracing Incident X-ray Diffraction and X-ray Photoelectron Spectroscopy. The mechanisms of the phase transition were elucidated through calculations on enthalpy of formation (EOF). The experimental results agree well with the theoretical calculations. We conclude that with increasing nitrogen, phase transition takes place from rocksalt (δ-HfN) to c-Hf3N4 through three stages of structural evolution: δ-HfN (containing Hf vacancies) → mixture of (δ-HfN + c-Hf3N4) → c-Hf3N4. The driving force of the phase transition is energy minimization. The three stages of structural evolution are explained by comparing the EOF of the δ-HfN and c-Hf3N4 phases. As the phase transition takes place, the hafnium nitride film morphs from a conductive and opaque metal into an insulating and transparent semiconductor

  3. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    International Nuclear Information System (INIS)

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications

  4. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: rupeshkr@barc.gov.in [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Soni, A. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, D.R.; Kulkarni, M.S. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2014-11-15

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications.

  5. Enhanced deposition of cubic boron nitride films on roughened silicon and tungsten carbide-cobalt surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Teii, K., E-mail: teii@asem.kyushu-u.ac.j [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Hori, T. [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, S. [Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016 (Japan)

    2011-01-03

    We report the influence of substrate surface roughness on cubic boron nitride (cBN) film deposition under low-energy ion bombardment in an inductively coupled plasma. Silicon and cemented tungsten carbide-cobalt (WC-Co) surfaces are roughened by low-energy ion-assisted etching in a hydrogen plasma, followed by deposition in a fluorine-containing plasma. Infrared absorption coefficients are measured to be 22,000 cm{sup -1} and 17,000 cm{sup -1} for sp{sup 2}-bonded BN and cBN phases, respectively, for our films. For the silicon substrates, the film growth rate and the cBN content in the film increase with increasing the surface roughness, while the amount of sp{sup 2}BN phase in the film shows only a small increase. A larger surface roughness of the substrate results in a smaller contact angle of water, indicating that a higher surface free energy of the substrate contributes to enhancing growth of the cBN film. For the WC-Co substrates, the film growth rate and the cBN content in the film increase similarly by roughening the surface.

  6. Enhanced deposition of cubic boron nitride films on roughened silicon and tungsten carbide-cobalt surfaces

    International Nuclear Information System (INIS)

    We report the influence of substrate surface roughness on cubic boron nitride (cBN) film deposition under low-energy ion bombardment in an inductively coupled plasma. Silicon and cemented tungsten carbide-cobalt (WC-Co) surfaces are roughened by low-energy ion-assisted etching in a hydrogen plasma, followed by deposition in a fluorine-containing plasma. Infrared absorption coefficients are measured to be 22,000 cm-1 and 17,000 cm-1 for sp2-bonded BN and cBN phases, respectively, for our films. For the silicon substrates, the film growth rate and the cBN content in the film increase with increasing the surface roughness, while the amount of sp2BN phase in the film shows only a small increase. A larger surface roughness of the substrate results in a smaller contact angle of water, indicating that a higher surface free energy of the substrate contributes to enhancing growth of the cBN film. For the WC-Co substrates, the film growth rate and the cBN content in the film increase similarly by roughening the surface.

  7. Substrate surface polariton splitting due to thin zinc oxide and aluminum nitride films presence

    International Nuclear Information System (INIS)

    Surface polariton (SP) is the non-radiative interface electromagnetic mode, propagating along the interface between two media, if one of them is absorbing (metal, semiconductor or dielectric with the strong absorption bands) and exponentially decaying out of the interface. The introduction of a transition layer at this interface results in the shift and broadening of SP. This effect can be used to obtain film parameters (thickness and optical constants) in the region of SP existence. Zinc oxide (ZnO) films (100–300 nm thick) have been prepared on the LiF and CaF2 substrates and aluminum nitride films (40 and 400 nm thick) have been prepared on sapphire substrates. The SP spectra have been measured by attenuated total reflection (ATR) technique. IFS66v (BRUKER) infrared Fourier-transform spectrometer was used for ATR and near normal incidence external reflection spectral measurements. Angular dependencies of the absorption bands positions in the ATR spectra give the dispersion of SP. The measured SP dispersion is compared with one calculated using the film parameters obtained by dispersion analysis of the external reflectivity spectra. The splitting of the dispersion curves of substrate SP was found. It is due to the resonance interaction of substrate SP with the film optical phonons. This splitting is proportional to the square root of the film thickness. For ZnO films on CaF2 “long range” SPs were observed. These effects allow estimate film complex dielectric function in the region under consideration.

  8. Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kim-Ngan, N.-T.H., E-mail: tarnawsk@up.krakow.p [Institute of Physics, Pedagogical University, Podchorazych 2, 30-084 Krakow (Poland); Balogh, A.G. [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Havela, L. [Faculty of Mathematics and Physics, Charles University, 12116 Prague 2 (Czech Republic); Gouder, T. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, 76125 Karlsruhe (Germany)

    2010-06-15

    Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He{sup +} ions. The films were prepared by reactive DC sputtering at the temperatures of -200 {sup o}C, +25 {sup o}C and +300 {sup o}C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at -200 {sup o}C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U-N-Si-O layers at the interface. The sample irradiation by 1 MeV Ar{sup +} ion beam with ion fluence of about 1.2-1.7 x 10{sup 16} ions/cm{sup 2} caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at -200 {sup o}C and at +25 {sup o}C, but almost no change in the film thickness was detected for the film deposited at +300 {sup o}C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 x 10{sup 16} ions/cm{sup 2}.

  9. β-Sialon Produced by Carbon Thermal Nitriding Reaction of Bauxite

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    β-Sialon was produced by carbon thermal nitriding reaction in N2 gas atmosphere when the mixtures of bauxite and anthracite were put into vertical furnace. According to the mass loss of raw materials and the result of X-ray diffration (XRD) of products, the influences of the process parameters on the compositions and relative contents of products, such as the fixed carbon content, the flow of N2, the soaking time and the temperature, were researched.

  10. Effect of the nanoscratch resistance of indium nitride thin films in the etching duration

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Wen-Nong, E-mail: nong88@yam.com [Department of Mechanical Engineering, National Central University, Chung-Li, Taiwan (China); Department of Vehicle Engineering, Army Academy, Chung-Li, Taiwan (China); Shih, Teng-Shih [Department of Mechanical Engineering, National Central University, Chung-Li, Taiwan (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer We evaluated the tribological properties of InN films/AlN buffer/Si. Black-Right-Pointing-Pointer The measured values of friction upon increasing the etching duration. Black-Right-Pointing-Pointer Low In-N density of InN films at longer etching duration to decay resistance and plastic deformation. - Abstract: This study present the nanotribological behavior of single-crystalline indium nitride (InN) films onto aluminum nitride (AlN) buffer layers on Si(1 1 1) substrates. The surface morphology and friction ({mu}) were analyzed using atomic force microscopy and nanoscratch system. It is confirmed that the normal force (F{sub n}) measured values of {mu} of the InN films, from 10 to 60 min of etching duration, were in the range from 0.2 to 0.43 for F{sub n} = 2000 {mu}N; 0.25 to 0.58 for F{sub n} = 6000 {mu}N, respectively. It is suggested that the measured values of {mu} is slightly increased based on the etching duration due to the etching effect on the grain boundary and reduce film quality of InN films. From morphological observations, we compared the sliding resistance against contact-induced damage of the InN films in the presented ploughed of the area. It is confirmed that the contact sliding line is observable due to the increased F{sub n}, the following investigation with friction curve and lateral force is studied.

  11. Dip coating of boron nitride thin films on nicalon fibers

    International Nuclear Information System (INIS)

    This paper discusses a process involving dip coating of ceramic fibers in H3BO3 solution followed by reaction with NH3 has resulted in the formation of a BN coating on Nicalon and a carbon coated Nicalon fiber. BN coated C-Nicalon fiber maintained its strength during the coating process, while the BN coated Nicalon did not

  12. X-ray elastic constants of chromium nitride films deposited by arc-ion plating

    International Nuclear Information System (INIS)

    Thin films have been successfully utilized to improve the property of mechanical components. However, it is generally known that mechanical properties, such as elastic constants and tensile strength of thin films, are different from those of bulk material, and they are not known in the present state. In many times, x-ray stress measurement revealed a very high compressive residual stress state in the film when bulk elastic constants were used in the stress calculation. The purpose of this research is to investigate the elastic constants of chromium nitride (CrN) films. The film was deposited on austenitic stainless steel (JIS: SUS304) substrates by the arc-ion-plating (AIP) method under the following conditions: the pressure of nitrogen atmosphere was maintained at 2.63 Pa, the substrate temperature of about 573 K, the arc discharge current of 100 A, the bias voltage between -300 and -100 V, and the substrate rotating rate at 3 rpm. The lattice strain of CrN films was measured by x-ray method at various loading stages and the x-ray elastic constants of CrN films were evaluated

  13. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  14. Self-assembly of graphitic carbon nitride nanosheets–carbon nanotube composite for electrochemical simultaneous determination of catechol and hydroquinone

    International Nuclear Information System (INIS)

    Graphical abstract: Schematic diagram of hydrothermal synthesis graphitic carbon nitride nanosheets-carbon nanotube composite and theirs application for electrochemical sensing catechol and hydroquinone. - Highlights: • Self-assembly of graphitic carbon nitride nanosheets-carbon nanotube composite. • CNNS-CNT show more stronger conductivity than CNNS and CNT. • CNNS-CNT has been performed for detection of catechol and hydroquinone. • The probe was applied to detect practical samples with satisfactory results. - Abstract: In this paper, three-dimensional (3D) graphitic carbon nitride nanosheets-carbon nanotube (CNNS-CNT) composite was synthesized via hydrothermal reaction of 2D CNNS and 1D CNT-COOH by π-π stacking and electrostatic interactions. This CNNS-CNT composite was characterized by transmission electron microscope, scanning electron microscope, x-ray diffraction and fourier-transform infrared. In addition, the CNNS-CNT composite displayed excellent conductivity comparing with CNNS and CNT-COOH monomer. This composite was applied for electrochemical simultaneous determination of catechol (CC) and hydroquinone (HQ) with good sensitivity, wide linear range and low detection limit. In addition, this CNNS-CNT composite modified electrode was also applied to detect practical samples with satisfactory results

  15. Thickness dependence of Young's modulus and residual stress of sputtered aluminum nitride thin films

    Science.gov (United States)

    Schneider, M.; Bittner, A.; Schmid, U.

    2014-11-01

    Aluminum nitride thin films are commonly used as active layer in micro-/nanomachined devices due to their piezoelectric properties. In order to predict the performance of advanced device architectures, careful modelling and simulation using techniques such as finite element analysis are of the utmost importance. An accurate knowledge of the corresponding thin film material properties is therefore required. This work focuses on the mechanical properties residual stress and Young's modulus over a wide thickness range from 100 to 1200 nm. The load-deflection technique is used to measure the bending curve of a circumferentially clamped, circular aluminum nitride diaphragm under a uniformly distributed pressure load. The bending curves are analyzed using an advanced analytical approach rather than commonly used models for load-deflection methods, thus resulting in a higher accuracy. It is found that the Young's modulus is nearly independent of film thickness, whereas the tensile residual stress exhibits a maximum at a thickness of about 600 nm. A thorough discussion of possible error sources is presented and approaches to minimize their impact are discussed.

  16. Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale

    Directory of Open Access Journals (Sweden)

    Costas A. Charitidis

    2013-04-01

    Full Text Available The use of materials with very attractive friction and wear properties has raised much attention in research and industrial sectors. A wide range of tribological applications, including rolling and sliding bearings, machining, mechanical seals, biomedical implants and microelectromechanical systems (MEMS, require thin films with high mechanical strength, chemical inertness, broad optical transparency, high refractive index, wide bandgap excellent thermal conductivity and extremely low thermal expansion. Carbon based thin films like diamond, diamond-like carbon, carbon nitride and cubic boron nitride known as “super-hard” material have been studied thoroughly as the ideal candidate for tribological applications. In this study, the results of experimental and simulation works on the nanotribological behavior of carbon films and fundamental mechanisms of friction and lubricity at the nano-scale are reviewed. The study is focused on the nanomechanical properties and analysis of the nanoscratching processes at low loads to obtain quantitative analysis, the comparison obtain quantitative analysis, the comparison of their elastic/plastic deformation response, and nanotribological behavior of the a-C, ta-C, a-C:H, CNx, and a-C:M films. For ta-C and a-C:M films new data are presented and discussed.

  17. Gallium Nitride Thin Films Containing Rare Earth Ions Fabricated by Magnetron Sputtering

    Czech Academy of Sciences Publication Activity Database

    Prajzler, V.; Huttel, I.; Špirková, J.; Hamáček, J.; Machovič, V.; Oswald, J.; Peřina, Vratislav; Havránek, Vladimír

    University of Aveiro : MEDIAMIRA, Cluj-Napoca, 2005 - (Ali, N.; Gracio, J.; Jakson, M.), s. 202-204 ISBN 973-713-065-0. [International Conference on Surfaces, Coatings and Nanostructured Materials - nanoSMat2005. Aveiro (PT), 07.09.2005-09.09.2005] R&D Projects: GA ČR(CZ) GA104/03/0385; GA ČR(CZ) GA104/03/0387 Institutional research plan: CEZ:AV0Z10480505 Keywords : gallium nitride * thin films Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  18. Liquid nitrogen to room temperature thermometry using niobium nitride thin films

    OpenAIRE

    Bourgeois, Olivier; André, Emmanuel; Macovei, Cristina; Chaussy, Jacques

    2006-01-01

    Niobium nitride thin film thermometry has been developed for the temperature range of 70K to 300K. The deposition parameters have been optimized in order to get the best performances, i.e. the highest temperature coefficient of resistance (TCR), up to 300K. The TCR is found to be largely higher than 1% as the temperature is lowered from 300K, up to 6% at 77K. These significant performances are compared to the one of regular platinum thermometer as well as to other resistive thermometer: semic...

  19. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    Directory of Open Access Journals (Sweden)

    S. Reboh

    2013-10-01

    Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  20. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    Science.gov (United States)

    Reboh, S.; Morin, P.; Hytch, M. J.; Houdellier, F.; Claverie, A.

    2013-10-01

    To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  1. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    OpenAIRE

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; J.K. Rath; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, as well as thin film silicon single junction and multijunction junction solar cells. The application of HW-SiNx at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cell...

  2. Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

    OpenAIRE

    Qinke Wu; Ji-Hoon Park; Sangwoo Park; Seong Jun Jung; Hwansoo Suh; Noejung Park; Winadda Wongwiriyapan; Sungjoo Lee; Young Hee Lee; Young Jae Song

    2015-01-01

    A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 μm to more than 100 μm) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can ...

  3. Graphitic carbon nitride nanosheets doped graphene oxide for electrochemical simultaneous determination of ascorbic acid, dopamine and uric acid

    International Nuclear Information System (INIS)

    Graphical abstract: Schematic drawing of electrochemical oxidize AA, DA and UA on graphitic carbon nitride nanosheets-graphene oxide composite modified electrode. - Highlights: • Synthesize g-C3N4, GO and CNNS-GO composite. • CNNS-GO composite was the first time for simultaneous determination of AA, DA and UA. • CNNS-GO/GCE displays fantastic selectivity and sensitivity for AA, DA and UA. • CNNS-GO/GCE was applied to detect real sample with satisfactory results. - Abstract: Graphitic carbon nitride nanosheets with a graphite-like structure have strong covalent bonds between carbon and nitride atoms, and nitrogen atoms in the carbon architecture can accelerate the electron transfer and enhance electrical properties effectually. The graphitic carbon nitride nanosheets-graphene oxide composite was synthesized. And the electrochemical performance of the composite was investigated by cyclic voltammetry and differential pulse voltammetry ulteriorly. Due to the synergistic effects of layer-by-layer structures by π-π stacking or charge-transfer interactions, graphitic carbon nitride nanosheets-graphene oxide composite can improved conductivity, electro-catalytic and selective oxidation performance. The proposed graphitic carbon nitride nanosheets-graphene oxide composite modified electrode was employed for simultaneous determination of ascorbic acid, dopamine and uric acid in their mixture solution, it exhibited distinguished sensitivity, wide linear range and low detection limit. Moreover, the modified electrode was applied to detect urine and dopamine injection sample, and then the samples were spiked with certain concentration of three substances with satisfactory recovery results

  4. Optomechanical and crystallization phenomena visualized with 4D electron microscopy: interfacial carbon nanotubes on silicon nitride.

    Science.gov (United States)

    Flannigan, David J; Zewail, Ahmed H

    2010-05-12

    With ultrafast electron microscopy (UEM), we report observation of the nanoscopic crystallization of amorphous silicon nitride, and the ultrashort optomechanical motion of the crystalline silicon nitride at the interface of an adhering carbon nanotube network. The in situ static crystallization of the silicon nitride occurs only in the presence of an adhering nanotube network, thus indicating their mediating role in reaching temperatures close to 1000 degrees C when exposed to a train of laser pulses. Under such condition, 4D visualization of the optomechanical motion of the specimen was followed by quantifying the change in diffraction contrast of crystalline silicon nitride, to which the nanotube network is bonded. The direction of the motion was established from a tilt series correlating the change in displacement with both the tilt angle and the response time. Correlation of nanoscopic motion with the picosecond atomic-scale dynamics suggests that electronic processes initiated in the nanotubes are responsible for the initial ultrafast optomechanical motion. The time scales accessible to UEM are 12 orders of magnitude shorter than those traditionally used to study the optomechanical motion of carbon nanotube networks, thus allowing for distinctions between the different electronic and thermal mechanisms to be made. PMID:20377202

  5. Thermal Contact Conductance Analysis of Nitride and Carbonitride Thin Film Coatings for Thermal Interface Material Application

    Science.gov (United States)

    Subramani, Shanmugan; Thing, Lee Yuan; Devarajan, Mutharasu

    2015-12-01

    In order to reduce and maintain the bond line thickness between substrate and LED package, solid thin film with good thermal conductivity is suggested as thermal interface material and the proposed film thickness is about less than 1 µ. The surface parameter such as roughness and hardness is a key factor which alters the contact conductance between the two matt surfaces. Consequently, filtered vacuum cathodic arc deposited nitride thin films (CrN, TiN, AlTiN, and TiCN) on copper substrate were tested for thermal interface material applications in electronic packaging. The thermal contact conductance of the prepared thin films was evaluated using surface properties such as microhardness and surface roughness. The results were verified with the theoretical model. The measured microhardness and surface roughness of CrN thin film are 17 GPa (low) and 0.768 µm (high), respectively. The measured thermal contact conductance of all thin films showed linear properties for applied pressure and very close to the values of theoretical model. High value in thermal contact conductance of about 256 W/m2 K was noticed with CrN thin film at 1100 kPa. The percentage of deviation for our measured contact conductance value from the theoretical model value was decreasing for the increased contact pressure and observed low value (7 pct) for CrN thin film at 1100 kPa. The thermal conductivity of all thin films was also calculated from the conductance model and observed high value (19.34 W/mK) with CrN thin film.

  6. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    International Nuclear Information System (INIS)

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed

  7. Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption on the transport properties of carbon and boron nitride nanotubes

    Science.gov (United States)

    Zhong, Xiaoliang; Mukhopadhyay, Saikat; Gowtham, S.; Pandey, Ravindra; Karna, Shashi P.

    2013-04-01

    The effect of molecular adsorption on the transport properties of single walled carbon and boron nitride nanotubes (CNTs and BNNTs) is investigated using density functional theory and non-equilibrium Green's function methods. The calculated I-V characteristics predict noticeable changes in the conductivity of semiconducting BNNTs due to physisorption of nucleic acid base molecules. Specifically, guanine which binds to the side wall of BNNT significantly enhances its conductivity by introducing conduction channels near the Fermi energy of the bioconjugated system. For metallic CNTs, a large background current masks relatively small changes in current due to the biomolecular adsorption. The results therefore suggest the suitability of BNNTs for biosensing applications.

  8. Doping and electrical properties of cubic boron nitride thin films: A critical review

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) is a promising material for high-power and high-temperature electronic devices operating in harsh environments due to its outstanding properties including a wide band-gap, good chemical stability, high thermal conductivity, and high breakdown field. The electronic applications of c-BN have received considerable attention, benefiting from the progress in c-BN thin film deposition techniques during the last few years. The present article reviews the latest developments in doping and electrical properties of c-BN thin films. Following a brief introduction on film growth, we present calculated theoretical results on electronic structure as well as the energies of native defects and impurity dopants in c-BN. In recent experimental research, several dopants, including Be, Mg, Zn, S, and Si, have been incorporated into c-BN thin films during deposition or by post ion implantation, resulting in both n- and p-type conduction. These results are summarized and discussed in Section 3. In addition, results on c-BN/metal-contacts and p–n junctions based on intrinsic or doped c-BN thin films are discussed in Section 4. Finally, current status and future prospects for doping and electrical properties of c-BN thin films are discussed

  9. Activation of peroxymonosulfate by graphitic carbon nitride loaded on activated carbon for organic pollutants degradation.

    Science.gov (United States)

    Wei, Mingyu; Gao, Long; Li, Jun; Fang, Jia; Cai, Wenxuan; Li, Xiaoxia; Xu, Aihua

    2016-10-01

    Graphitic carbon nitride supported on activated carbon (g-C3N4/AC) was prepared through an in situ thermal approach and used as a metal free catalyst for pollutants degradation in the presence of peroxymonosulfate (PMS) without light irradiation. It was found that g-C3N4 was highly dispersed on the surface of AC with the increase of surface area and the exposition of more edges and defects. The much easier oxidation of C species in g-C3N4 to CO was also observed from XPS spectra. Acid Orange 7 (AO7) and other organic pollutants could be completely degraded by the g-C3N4/AC catalyst within 20min with PMS, while g-C3N4+PMS and AC+PMS showed no significant activity for the reaction. The performance of the catalyst was significantly influenced by the amount of g-C3N4 loaded on AC; but was nearly not affected by the initial solution pH and reaction temperature. In addition, the catalysts presented good stability. A nonradical mechanism accompanied by radical generation (HO and SO4(-)) in AO7 oxidation was proposed in the system. The CO groups play a key role in the process; while the exposure of more N-(C)3 group can further increase its electron density and basicity. This study can contribute to the development of green materials for sustainable remediation of aqueous organic pollutants. PMID:27214000

  10. Intrinsic stress analysis of sputtered carbon film

    Institute of Scientific and Technical Information of China (English)

    Liqin Liu; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Moyan Tan; Qiushi Huang; Rui Chen; Jing Xu; Lingyan Chen

    2008-01-01

    Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated.The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses.The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition.By varying argon pressure and target-substrate distance,energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level.The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

  11. Hydrogen production using zinc-doped carbon nitride catalyst irradiated with visible light

    Directory of Open Access Journals (Sweden)

    Bing Yue, Qiuye Li, Hideo Iwai, Tetsuya Kako and Jinhua Ye

    2011-01-01

    Full Text Available Recently, graphitic carbon nitride (g-C3N4 has been investigated as a photocatalyst for water splitting and organic dye degradation. In this study, we have developed a simple soft-chemical method of doping Zn into g-C3N4 to prepare a metal-containing carbon nitride. The doping was confirmed by x-ray photoelectron spectroscopy, and diffusion reflectance spectra revealed a significant red shift in the absorption edge of Zn/g-C3N4. This hybrid material shows high photocatalytic activity and good stability for hydrogen evolution from an aqueous methanol solution under visible light irradiation (λ≥420 nm. The hydrogen evolution rate was more than 10 times higher for a 10%-Zn/g-C3N4 sample (59.5 μmol h−1 than for pure g-C3N4. The maximum quantum yield was 3.2% at 420 nm.

  12. Hydrogen production using zinc-doped carbon nitride catalyst irradiated with visible light

    International Nuclear Information System (INIS)

    Recently, graphitic carbon nitride (g-C3N4) has been investigated as a photocatalyst for water splitting and organic dye degradation. In this study, we have developed a simple soft-chemical method of doping Zn into g-C3N4 to prepare a metal-containing carbon nitride. The doping was confirmed by x-ray photoelectron spectroscopy, and diffusion reflectance spectra revealed a significant red shift in the absorption edge of Zn/g-C3N4. This hybrid material shows high photocatalytic activity and good stability for hydrogen evolution from an aqueous methanol solution under visible light irradiation (λ≥420 nm). The hydrogen evolution rate was more than 10 times higher for a 10%-Zn/g-C3N4 sample (59.5 μmol h-1) than for pure g-C3N4. The maximum quantum yield was 3.2% at 420 nm.

  13. Ammonia-induced robust photocatalytic hydrogen evolution of graphitic carbon nitride

    Science.gov (United States)

    Yang, Pengju; Zhao, Jianghong; Qiao, Wei; Li, Li; Zhu, Zhenping

    2015-11-01

    We report a new and effective method to prepare high activity graphitic carbon nitride (g-C3N4) by a simple ammonia etching treatment. The obtained g-C3N4 displays a high BET surface area and enhanced electron/hole separation efficiency. The hydrogen evolution rates improved from 52 μmol h-1 to 316.7 μmol h-1 under visible light.We report a new and effective method to prepare high activity graphitic carbon nitride (g-C3N4) by a simple ammonia etching treatment. The obtained g-C3N4 displays a high BET surface area and enhanced electron/hole separation efficiency. The hydrogen evolution rates improved from 52 μmol h-1 to 316.7 μmol h-1 under visible light. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05570a

  14. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  15. Formation of conductive copper lines by femtosecond laser irradiation of copper nitride film on plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xiaodong [Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou 213164, Jiangsu (China); Yuan, Ningyi, E-mail: nyyuan@cczu.edu.cn [Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu (China); Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou 213164, Jiangsu (China); Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou 213164, Jiangsu (China); Qiu, Jianhua [Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu (China); Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou 213164, Jiangsu (China); Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou 213164, Jiangsu (China); Ding, Jianning, E-mail: dingjn@cczu.edu.cn [Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu (China); Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou 213164, Jiangsu (China); Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou 213164, Jiangsu (China)

    2015-05-15

    In this paper, we report a simple method to form conductive copper lines by scanning a single-beam femtosecond pulse laser on a plastic substrate covered with copper nitride (Cu{sub 3}N) film. The Cu{sub 3}N films were prepared by DC magnetron sputtering in the presence of an Ar + N{sub 2} atmosphere at 100 °C. The influence of the laser power and scanning speed on the formed copper line width, surface features, and morphology was analyzed by means of optical microscopy, X-ray diffraction, non-contact 3D profilometer, and scanning electron microscopy. The experimental results demonstrate that low laser power and low scanning speed favor the formation of uniform and flat Cu lines. After process optimization, copper lines with a width less than 5 μm were obtained, which provides an attractive application prospect in the field of flexible electronic devices.

  16. Microstructure controlling of Ti/N particles dissipated energy to superficial layer of titanium nitride film

    Institute of Scientific and Technical Information of China (English)

    MA Zhongquan; ZHANG Qin

    2004-01-01

    The titanium nitride (TiNx) thin film with a controllable surface structure was fabricated by the dc-reactive magnetron sputtering technique, and the variation of microstructure in the surface layer with the energy of condensed adatom was investigated through X-ray diffraction (XRD) pattern and transmission electron microscope (TEM). It was found that the lattice parameters and the full width at half maximum (fwhm) of XRD peak on the top layers in the preferred orientation of (111) and (002) were closely correlated to the impacting induced phase composition, compressive strain, crystallite size and the fault density of the thin films. In the theory, a new means was used to model the atomistic process of per condensed adatom. The average energy at least in the minimum energy state of the incorporate adatom on TiN surface layer was statistically formulized through a careful consideration of dynamical process, which properly interpreted the experimental observations.

  17. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  18. Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

    CERN Document Server

    Coiffard, G; Driessen, E F C; Pignard, S; Calvo, M; Catalano, A; Goupy, J; Monfardini, A

    2015-01-01

    We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 Hz/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.

  19. Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

    CERN Document Server

    Kinsey, Nathaniel; Courtwright, Devon; DeVault, Clayton; Bonner, Carl E; Gavrilenko, Vladimir I; Shalaev, Vladimir M; Hagan, David J; Van Stryland, Eric W; Boltasseva, Alexandra

    2015-01-01

    Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

  20. Piezoresistive effect in carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The piezoresistive effect of the pristine carbon nanotube (CNT) films has been studied. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the pristine CNT films was studied by a three-point bending test. The gauge factor for the pristine CNT films under 500 microstrains was found to be at least 65 at room temperature, and increased with temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in CNT films may be ascribed to a pressure-induced change in the band gap and the defects.

  1. Optical properties, structural parameters, and bonding of highly textured rocksalt tantalum nitride films

    Science.gov (United States)

    Matenoglou, G. M.; Koutsokeras, L. E.; Lekka, Ch. E.; Abadias, G.; Camelio, S.; Evangelakis, G. A.; Kosmidis, C.; Patsalas, P.

    2008-12-01

    Tantalum nitride is an interesting solid with exceptional properties and it might be considered as a representative model system of the d3s2 transition metal nitrides. In this work highly textured, stoichiometric, rocksalt TaN(111) films have been grown on Si(100) by pulsed laser deposition. The films were under a triaxial stress, which has been determined by the sin2 ψ method. The stress-free lattice parameter was found to be 0.433±0.001 nm, a value which has been also determined by ab initio calculations within the local spin density approximation. The optical properties of TaN have been studied using spectroscopic ellipsometry and detailed band structure calculations. The electron conductivity of TaN is due to the Ta 5dt2g band that intercepts the Fermi level and is the source of intraband absorption. The plasma energies of fully dense rocksalt TaN were found to be 9.45 and 9.7 eV based on the experimental results and ab initio calculations, respectively. Additional optical absorption bands were also observed around 1.9 and 7.3 eV and attributed to be due to crystal field splitting of the Ta 5d band (t2g→eg transition) and the N p→Ta d interband transition, respectively.

  2. Optical properties, structural parameters, and bonding of highly textured rocksalt tantalum nitride films

    International Nuclear Information System (INIS)

    Tantalum nitride is an interesting solid with exceptional properties and it might be considered as a representative model system of the d3s2 transition metal nitrides. In this work highly textured, stoichiometric, rocksalt TaN(111) films have been grown on Si(100) by pulsed laser deposition. The films were under a triaxial stress, which has been determined by the sin2 ψ method. The stress-free lattice parameter was found to be 0.433±0.001 nm, a value which has been also determined by ab initio calculations within the local spin density approximation. The optical properties of TaN have been studied using spectroscopic ellipsometry and detailed band structure calculations. The electron conductivity of TaN is due to the Ta 5dt2g band that intercepts the Fermi level and is the source of intraband absorption. The plasma energies of fully dense rocksalt TaN were found to be 9.45 and 9.7 eV based on the experimental results and ab initio calculations, respectively. Additional optical absorption bands were also observed around 1.9 and 7.3 eV and attributed to be due to crystal field splitting of the Ta 5d band (t2g→eg transition) and the N p→Ta d interband transition, respectively

  3. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Volpi, F., E-mail: fabien.volpi@simap.grenoble-inp.fr; Braccini, M.; Pasturel, A. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); Devos, A. [IEMN, UMR 8520 CNRS, Avenue Poincarré - CS 60069 - 59652 Villeneuve d' Ascq Cedex (France); Raymond, G. [Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble (France); CNRS, SIMAP, F-38000 Grenoble (France); STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Morin, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France)

    2014-07-28

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm{sup 3}, respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films

  4. Conductive Graphitic Carbon Nitride as an Ideal Material for Electrocatalytically Switchable CO2 Capture

    OpenAIRE

    Xin Tan; Liangzhi Kou; Tahini, Hassan A.; Smith, Sean C.

    2015-01-01

    Good electrical conductivity and high electron mobility of the sorbent materials are prerequisite for electrocatalytically switchable CO2 capture. However, no conductive and easily synthetic sorbent materials are available until now. Here, we examined the possibility of conductive graphitic carbon nitride (g-C4N3) nanosheets as sorbent materials for electrocatalytically switchable CO2 capture. Using first-principle calculations, we found that the adsorption energy of CO2 molecules on g-C4N3 n...

  5. One Dimensional Graphitic Carbon Nitrides as Effective Metal-Free Oxygen Reduction Catalysts

    OpenAIRE

    Muhammad Tahir; Nasir Mahmood; Jinghan Zhu; Asif Mahmood; Butt, Faheem K.; Syed Rizwan; Imran Aslam; Tanveer, M.; Faryal Idrees; Imran Shakir; Chuanbao Cao; Yanglong Hou

    2015-01-01

    To explore the effect of morphology on catalytic properties of graphitic carbon nitride (GCN), we have studied oxygen reduction reaction (ORR) performance of two different morphologies of GCN in alkaline media. Among both, tubular GCN react with dissolved oxygen in the ORR with an onset potential close to commercial Pt/C. Furthermore, the higher stability and excellent methanol tolerance of tubular GCN compared to Pt/C emphasizes its suitability for fuel cells.

  6. 2D to 3D transition of polymeric carbon nitride nanosheets

    International Nuclear Information System (INIS)

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS

  7. 2D to 3D transition of polymeric carbon nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales (IIM), Universidad Nacional Autónoma de México, Apdo. Postal 70–360, Cd. Universitaria, México D.F. 04510 (Mexico); Martín-Ramos, Pablo [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martín-Gil, Jesús; Navas-Gracia, Luis M. [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  8. Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films

    International Nuclear Information System (INIS)

    The authors conducted a physico-chemical analysis of tensile sequential-nitrogen-plasma-treated silicon nitride films, which function as stressor liners in complementary metal oxide semiconductor (CMOS) technologies. These films are made of stacked nanometer-thick, plasma-enhanced, chemical vapor-deposited layers which were individually treated with N2-plasma, to increase stress. This study allowed us to monitor the evolution of the films' chemical composition and stress as a function of process parameters such as deposition and post-N2-plasma duration. Consistent with secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) and other physico-chemical analysis results, it was shown that the elementary component of the films can be modeled with a bi-layer consisting of an untreated slice at the bottom that is covered by a more tensile post-treated film. In addition, we observed that longer plasma treatments increase residual stress, SiN bond concentration and layer density, while reducing hydrogen content. The stress increase induced by the plasma treatment was shown to correlate with the increase in SiN bonds following a percolation mechanism that is linked to hydrogen dissociation. Kinetics laws describing both SiN bond generation and stress increase are proposed and it is demonstrated that stress increase follows first-order kinetics.

  9. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10−7 cm2/V for electrons and holes, which is comparable to the value of about 10−7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products

  10. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Science.gov (United States)

    Doan, T. C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-05-01

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10-7 cm2/V for electrons and holes, which is comparable to the value of about 10-7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  11. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.; Yang, Kaida; Lukaszew, R. Alejandra [Department of Physics, The College of William & Mary, Small Hall, 300 Ukrop Way, Williamsburg, Virginia 23185 (United States)

    2016-03-15

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

  12. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    International Nuclear Information System (INIS)

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1

  13. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

    International Nuclear Information System (INIS)

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (108 cm−2), in the case of hydrogen-treated ND seeding particles, to very high values of 1011 cm−2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

  14. Nucleation and growth of cubic boron nitride films produced by ion-assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, T.A.; Medlin, D.L.; Mirkarimi, P.B.; McCarty, K.F.; Klaus, E.J.; Boehme, D.R.; Johnsen, H.A.; Mills, M.J.; Ottesen, D.K. [Sandia National Labs., Livermore, CA (United States)

    1993-12-31

    We are studying the boron nitride system using a pulsed excimer laser to ablate from hexagonal BN (cBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25--800C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N{sub 2} source gases to produce BN films with a high percentage of sp{sup 3}-bonded cBN. In order to optimize growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp{sup 3}-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30--40 mn. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm{sup {minus}1} and the position decreases with growth time to a constant value of 1085 cm{sup {minus}1}. Since in bulk cBN this IR mode appears at 1065 cm{sup {minus}1}, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

  15. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    International Nuclear Information System (INIS)

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation

  16. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  17. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  18. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren; Rechendorff, Kristian; Petrak, Vaclav; Nesladek, Milos; Rijkhoff, Nico; Pennisi, Cristian P.

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, ...

  19. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo-Vega, C. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C. (Mexico)]. E-mail: gallardo@ccmc.unam.mx; Cruz, W. de la [Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C. (Mexico)

    2006-09-15

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10{sup -2} to 1.3 x 10{sup -1} Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu{sub 3}N) and x = 0.25 (Cu{sub 4}N) when the nitrogen pressure is 1.3 x 10{sup -1} and 5 x 10{sup -2} Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.

  20. Piezoresistive Sensors Based on Carbon Nanotube Films

    Institute of Scientific and Technical Information of China (English)

    L(U) Jian-wei; WANG Wan-lu; LIAO Ke-jun; WANG Yong-tian; LIU CHang-lin; Zeng Qing-gao

    2005-01-01

    Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The experimental results showed that the carbon nanotubes have a striking piezoresistive effect.The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.

  1. Preparation of composite electroheat carbon film

    Institute of Scientific and Technical Information of China (English)

    XIA Jin-tong; TU Chuan-jun; LI Yan; HU Li-min; DENG Jiu-hua

    2005-01-01

    A kind of conductive and heating unit, which can reach a high surface electroheat temperature at a low voltage, was developed in view of the traditional electroheat coating which has a low surface electroheat temperature and an insufficient heat resistance of its binder. The coating molded electroheat carbon film(CMECF) was prepared by carbonizing the coating which was prepared by adding modified resin into flake graphite and carbon fiber, coating molded onto the surface of the heat resisting matrix after dried, while the hot pressing molded electroheat thick carbon film(HPMETCF) was prepared by carbonizing the bodies whose powders were hot pressing molded directly.The surface and inner microstructure of the carbon film was characterized and analyzed by SEM and DSC/TG, while electroheat property was tested by voltage-current volume resistivity tester and electrical parameter tester. The results show that, close-packed carbon network configuration is formed within the composite electroheat carbon film film after anti-oxidizable treatment reaches a higher surface electroheat temperature than that of the existing electroheat coatings at a low voltage, and has excellent electroheat property, high thermal efficiency as well as stable physicochemical property. It is found that, at room temperature(19± 2 ℃) and 22 V for 5 min, the surface electroheat temperature of the self-produced CMECF (mfiller/mresin = 1. 8/1) reaches 112 ℃ while HPMETCF (mfiller/mresin = 3. 6/1) reaches 265 ℃.

  2. GLANCING INCIDENCE X-RAY STUDIES OF TITANIUM NITRIDE THIN FILMS USING A NEW MULTIPURPOSE LABORATORY SPECTROMETER

    OpenAIRE

    Buschert, R.C; Gibson, P.; Gissler, W.; Haupt, J.; Crabb, T.

    1989-01-01

    A multipurpose laboratory glancing angle X-ray spectrometer using a standard X-ray tube and a germanium solid state detector has been designed for vertical and horizontal diffraction scans, reflectivity and glancing angle fluorescence measurements. It has been used to study titanium nitride thin films grown under various conditions that vary the stoichiometry, strain, grain size, orientation and lattice parameter. In particular, films grown at liquid nitrogen substrate temperature show very h...

  3. Microwave-assisted polyol synthesis of carbon nitride dots from folic acid for cell imaging.

    Science.gov (United States)

    Guan, Weiwei; Gu, Wei; Ye, Ling; Guo, Chenyang; Su, Su; Xu, Pinxiang; Xue, Ming

    2014-01-01

    A green, one-step microwave-assisted polyol synthesis was employed to prepare blue luminescent carbon nitride dots (CNDs) using folic acid molecules as both carbon and nitrogen sources. The as-prepared CNDs had an average size of around 4.51 nm and could be well dispersed in water. Under excitation at 360 nm, the CNDs exhibited a strong blue luminescence and the quantum yield was estimated to be 18.9%, which is greater than that of other reported CNDs. Moreover, the CNDs showed low cytotoxicity and could efficiently label C6 glioma cells, demonstrating their potential in cell imaging. PMID:25382977

  4. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  5. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    International Nuclear Information System (INIS)

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10-9 A/cm2 at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10-9A/cm2 at 1MV/cm was achieved

  6. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    International Nuclear Information System (INIS)

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO2/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications

  7. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  8. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics

    Science.gov (United States)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-11-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature

  9. Thermal conduction mechanisms in isotope-disordered boron nitride and carbon nanotubes

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Stewart, Derek

    2009-03-01

    We present first principles studies which determine dominant effects limiting the heat conduction in isotope-disordered boron nitride and carbon nanotubes [1]. Using an ab initio atomistic Green's function approach, we demonstrate that localization cannot be observed in the thermal conductivity measurements [1], and that diffusive scattering is the dominant mechanism which reduces the thermal conductivity [2]. We also give concrete predictions of the magnitude of the isotope effect on the thermal conductivities of carbon and boron nitride single-walled nanotubes [2]. We furthermore show that intershell scattering is not the main limiting mechanism for the heat flow through multi-walled boron nitride nanotubes [1], and that heat conduction restricted to a few shells leads to the low thermal conductivities experimentally measured [1]. We consequently successfully compare the results of our calculations [3] with the experimental measurements [1]. [1] C. W. Chang, A. M. Fennimore, A. Afanasiev, D. Okawa, T. Ikuno, H. Garcia, D. Li, A. Majumdar, A. Zettl, Phys. Rev. Lett. 2006, 97, 085901. [2] I. Savic, N. Mingo, D. A. Stewart, Phys. Rev. Lett. 2008, 101, 165502. [3] I. Savic, D. A. Stewart, N. Mingo, to be published.

  10. Oxygen Reduction Electrocatalysts Based on Coupled Iron Nitride Nanoparticles with Nitrogen-Doped Carbon

    Directory of Open Access Journals (Sweden)

    Min Jung Park

    2016-06-01

    Full Text Available Aimed at developing a highly active and stable non-precious metal electrocatalyst for oxygen reduction reaction (ORR, a novel FexNy/NC nanocomposite—that is composed of highly dispersed iron nitride nanoparticles supported on nitrogen-doped carbon (NC—was prepared by pyrolyzing carbon black with an iron-containing precursor in an NH3 atmosphere. The influence of the various synthetic parameters such as the Fe precursor, Fe content, pyrolysis temperature and pyrolysis time on ORR performance of the prepared iron nitride nanoparticles was investigated. The formed phases were determined by experimental and simulated X-ray diffraction (XRD of numerous iron nitride species. We found that Fe3N phase creates superactive non-metallic catalytic sites for ORR that are more active than those of the constituents. The optimized Fe3N/NC nanocomposite exhibited excellent ORR activity and a direct four-electron pathway in alkaline solution. Furthermore, the hybrid material showed outstanding catalytic durability in alkaline electrolyte, even after 4,000 potential cycles.

  11. Effect of Nitridation Time on the Surface Hardness of Medium Carbon Steels (AISI 1045)

    International Nuclear Information System (INIS)

    It has been investigated the effect of nitridation time on the surface hardness of medium carbon steels (AISI 1045). Parameters determining to the results were flow rate of the nitrogen gas, temperature and time. In this experiments, sample having diameter of 15 mm, thick 2 mm placed in tube of glass with diameter 35 mm heated 550 oC, flow rate and temperature were kept constants, 100 cc/minutes and 550 oC respectively, while the time were varied from 5, 10, 20 and 30 hours. It was found, that for the nitridation time of 5, 10, 20, and 30 hours, the surface hardness increased from 145 VHN to, 23.7, 296.8, 382.4 and 426.1 VHN, respectively. (author)

  12. Comparative study of electron transport mechanisms in epitaxial and polycrystalline zinc nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Xiang; Yamaguchi, Yuuki; Ninomiya, Yoshihiko; Yamada, Naoomi, E-mail: n-yamada@isc.chubu.ac.jp [Department of Applied Chemistry, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487–8501 (Japan)

    2016-01-14

    Zn{sub 3}N{sub 2} has been reported to have high electron mobility even in polycrystalline films. The high mobility in polycrystalline films is a striking feature as compared with group-III nitrides. However, the origins of the high mobility have not been elucidated to date. In this paper, we discuss the reason for high mobility in Zn{sub 3}N{sub 2}. We grew epitaxial and polycrystalline films of Zn{sub 3}N{sub 2}. Electron effective mass (m*) was determined optically and found to decrease with a decrease in electron density. Using a nonparabolic conduction band model, the m* at the bottom of the conduction band was derived to be (0.08 ± 0.03)m{sub 0} (m{sub 0} denotes the free electron mass), which is comparable to that in InN. Optically determined intra-grain mobility (μ{sub opt}) in the polycrystalline films was higher than 110 cm{sup 2} V{sup −1} s{sup −1}, resulting from the small m*. The Hall mobility (μ{sub H}) in the polycrystalline films was significantly smaller than μ{sub opt}, indicating that electron transport is impeded by scattering at the grain boundaries. Nevertheless, μ{sub H} higher than 70 cm{sup 2} V{sup −1} s{sup −1} was achievable owing to the beneficial effect of the high μ{sub opt}. As for the epitaxial films, we revealed that electron transport is hardly affected by grain boundary scattering and is governed solely by ionized impurity scattering. The findings in this study suggest that Zn{sub 3}N{sub 2} is a high-mobility semiconductor with small effective mass.

  13. Metalorganic chemical vapor deposition of few-layer sp2 bonded boron nitride films

    Science.gov (United States)

    Paduano, Qing; Snure, Michael; Weyburne, David; Kiefer, Arnold; Siegel, Gene; Hu, Jianjun

    2016-09-01

    A systematic study of the growth of atomically smooth few-layer sp2 bonded BN on 50 mm sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using Triethylboron (TEB) and NH3 as precursors is described. Based on the experimental results obtained using Raman spectroscopy, atomic force microscopy (AFM), X-ray reflectance measurements and transmission electron microscopy, we explored the growth parameter space and identified three different growth modes: random three-dimensional (3D) growth, a self-terminating few-layer growth mode, and a very slow layer-by-layer mode. The growth mode depends on the temperature, pressure, V/III ratio, and surface nitridation conditions, as follows: 3D island growth is dominant in the low V/III range and is characterized by a decreasing growth rate with increasing deposition temperature. When the V/III ratio is increased this 3D island growth mode transitions to a self-terminating few-layer growth mode. An additional transition from self-terminating growth to 3D growth occurs when the growth pressure is increased. Very slow layer by layer growth is found at high temperature and low pressure. Finally, substrate surface nitridation promotes self-terminating growth that results in atomically smooth films.

  14. Magnetic and structural properties of nitrided Fe and FeTi thin films

    CERN Document Server

    Bonder, M J

    2001-01-01

    presence of weak perpendicular anisotropy occurring as the bilayer thickness increased. As the bilayer thickness was increased there was an asymptotic approach of the magnetization to the level of the unexposed materials. The presence of the perpendicular anisotropy was maintained for a larger parameter space. In both series the anisotropy is attributed to stress induced by the substrate, Nitriding Fe and FeTi using the aforementioned technique provides a controlled and viable way to alter the magnetic and structural properties. This thesis investigates the magnetic and structural properties of Fe and Fe sub 8 sub 5 Ti sub 1 sub 5 thin films nitrided using a nitrogen atom source. In this novel technique, the atom source produces an atomic nitrogen beam for which multilayer samples with bilayers of the form Fe/FeN or FeTi/FeTiN were synthesized by varying the thickness of the Fe or FeTi exposed to the nitrogen beam. The samples studied here are all in the as-deposited state. X-Ray reflectivity confirms the pre...

  15. Fabrication of titanium nitride thin films by DC magneton sputtering on different types of substrates for coating applications

    International Nuclear Information System (INIS)

    Titanium nitride thin films (TiN) are fabricated by DC magneton sputtering on different types of substrates such as glass substrates, PET substrates, substrate alloy (AISI 304) and drill steel. In this work we study the effect of target-substrate distance, sputtering time and negative voltage to the crystal structure, mechanical and optical properties of the films. The properties of the thin films were studied by X-ray diffraction method Stylus, UV-Vis method and scanning electron microscopy. Results showed that the target-substrate distance, sputtering time and negative voltage affects the crystalline structure, mechanical and optical properties of the films. TiN films have been synthesized highly crystalline structure, crystal structure of thin films oriented along the surface lattice (111), (200) and (311). Besides TiN thin films also have high reflectance in the visible and infrared range, good adhesion, high chemical durability. (author)

  16. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  17. Characterization of hydrogenated amorphous carbon nitride particles and coatings obtained in a CH4/N2 radiofrequency discharge

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon nitride (a-CN x:H) particles and coatings have been prepared in a CH4/N2 13.56 MHz radiofrequency discharge. Particles and films have been examined by Scanning Electron Microscopy (SEM) and by infrared (IR) absorption spectroscopy for different nitrogen contents. SEM micrographs show that the dust particles are spherical with diameters in the range 0.2-4 μm. The surface morphology of the particles is strongly modified with the increase of the nitrogen content in the gas mixture. In the particle and film IR spectra, four predominant absorption bands have been observed. They reveal the presence of C-H, C=C, C=N and/or N-H (1300-1800 cm-1), -C≡N and -N≡C (2000-2300 cm-1), C-H (2800-3100 cm-1) and N-H and/or O-H (3200-3600 cm-1) bonds. These absorption bands are studied in order to determine the influence of the nitrogen incorporation

  18. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    International Nuclear Information System (INIS)

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH3/SiH4 ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH3/SiH4 ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects

  19. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

    2015-04-30

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

  20. Coaxial carbon plasma gun deposition of amorphous carbon films

    International Nuclear Information System (INIS)

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

  1. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  2. Carbon films produced from ionic liquid carbon precursors

    Science.gov (United States)

    Dai, Sheng; Luo, Huimin; Lee, Je Seung

    2013-11-05

    The invention is directed to a method for producing a film of porous carbon, the method comprising carbonizing a film of an ionic liquid, wherein the ionic liquid has the general formula (X.sup.+a).sub.x(Y.sup.-b).sub.y, wherein the variables a and b are, independently, non-zero integers, and the subscript variables x and y are, independently, non-zero integers, such that ax=by, and at least one of X.sup.+ and Y.sup.- possesses at least one carbon-nitrogen unsaturated bond. The invention is also directed to a composition comprising a porous carbon film possessing a nitrogen content of at least 10 atom %.

  3. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  4. Surface/interface analysis and optical properties of RF sputter-deposited nanocrystalline titanium nitride thin films

    International Nuclear Information System (INIS)

    Titanium nitride (TiNx) thin films were grown by radio-frequency (RF) magnetron sputter deposition by varying the nitrogen content in the reactive gas mixture over a wide range. The effect of nitrogen gas flow rate on the surface and interface morphology, chemical composition and optical properties of TiN thin films was studied employing atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Analysis of the optical properties probed with SE has shown that films deposited at low (0–5 sccm) nitrogen flow rates have the highest absorption at energies 2 flow rate, remaining consistent thereafter. SEM cross-sectional imaging analysis indicates the dense, columnar structure for the films grown at lower nitrogen flow rates. XPS analysis of atomic composition and the chemical states indicate that the atomic composition remained nearly constant while the chemical states varied significantly among the samples as a function of N2 flow rate. XPS analyses confirm the presence of TiNx, TiO2 and TiOxNy. These process–property relationships derived could be useful for defining and expanding the range of optical and electronic applications of titanium nitrides and (oxy)nitrides.

  5. Chemically Modulated Carbon Nitride Nanosheets for Highly Selective Electrochemiluminescent Detection of Multiple Metal-ions.

    Science.gov (United States)

    Zhou, Zhixin; Shang, Qiuwei; Shen, Yanfei; Zhang, Linqun; Zhang, Yuye; Lv, Yanqin; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-06-01

    Chemical structures of two-dimensional (2D) nanosheet can effectively control the properties thus guiding their applications. Herein, we demonstrate that carbon nitride nanosheets (CNNS) with tunable chemical structures can be obtained by exfoliating facile accessible bulk carbon nitride (CN) of different polymerization degree. Interestingly, the electrochemiluminescence (ECL) properties of as-prepared CNNS were significantly modulated. As a result, unusual changes for different CNNS in quenching of ECL because of inner filter effect/electron transfer and enhancement of ECL owing to catalytic effect were observed by adding different metal ions. On the basis of this, by using various CNNS, highly selective ECL sensors for rapid detecting multiple metal-ions such as Cu(2+), Ni(2+), and Cd(2+) were successfully developed without any labeling and masking reagents. Multiple competitive mechanisms were further revealed to account for such enhanced selectivity in the proposed ECL sensors. The strategy of preparing CNNS with tunable chemical structures that facilely modulated the optical properties would open a vista to explore 2D carbon-rich materials for developing a wide range of applications such as sensors with enhanced performances. PMID:27187874

  6. Microwave-assisted polyol synthesis of carbon nitride dots from folic acid for cell imaging

    Directory of Open Access Journals (Sweden)

    Guan WW

    2014-10-01

    Full Text Available Weiwei Guan,1,* Wei Gu,2,* Ling Ye,2 Chenyang Guo,1 Su Su,1 Pinxiang Xu,1,3 Ming Xue1,3 1Department of Pharmacology, School of Basic Medical Sciences, Capital Medical University, Beijing, People’s Republic of China; 2Department of Chemical Biology, School of Chemical Biology and Pharmaceutical Sciences, Capital Medical University, Beijing, People’s Republic of China; 3Beijing Laboratory for Biomedical Detection Technology and Instrument, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: A green, one-step microwave-assisted polyol synthesis was employed to prepare blue luminescent carbon nitride dots (CNDs using folic acid molecules as both carbon and nitrogen sources. The as-prepared CNDs had an average size of around 4.51 nm and could be well dispersed in water. Under excitation at 360 nm, the CNDs exhibited a strong blue luminescence and the quantum yield was estimated to be 18.9%, which is greater than that of other reported CNDs. Moreover, the CNDs showed low cytotoxicity and could efficiently label C6 glioma cells, demonstrating their potential in cell imaging. Keywords: carbon nitride dots (CNDs, folic acid, photoluminescence, cell imaging

  7. Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

    OpenAIRE

    Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

    2013-01-01

    We perform first-principles calculations to investigate the structural and electronic properties of metal-doped (10, 0) carbon nanotubes (CNTs) on a single hexagonal boron nitride (hBN) sheet in the presence of an external electric field. We consider K, Cl and Ni atoms as dopants to study the dependence of the electronic properties of the CNT on doping polarity and concentration. The electric field strength is varied from -0.2 V/\\AA to +0.2 V/\\AA to explore the effects of an external electric...

  8. Synthesis and Characterization of Zinc Phthalocyanine/Meso porous Carbon Nitride

    International Nuclear Information System (INIS)

    In this work, zinc phthalocyanine (ZnPc) was impregnated onto meso porous carbon nitride (m-C3N4) to expand the absorption to longer wavelength than that of the bare m-C3N4. The characterization result showed that the synthesized m-C3N4 was thermally stable until 450 degree Celsius. The presence of ZnPc on the m-C3N4 was confirmed from the respective diffraction patterns and absorption spectra. Thus, it is expected that the ZnPc/ m- C3N4 would be a potential photo catalyst for reactions conducted under visible light irradiation. (author)

  9. Coaxial nanocable: silicon carbide and silicon oxide sheathed with boron nitride and carbon

    Science.gov (United States)

    Zhang; Suenaga; Colliex; Iijima

    1998-08-14

    Multielement nanotubes comprising multiple phases, with diameters of a few tens of nanometers and lengths up to 50 micrometers, were successfully synthesized by means of reactive laser ablation. The experimentally determined structure consists of a beta-phase silicon carbide core, an amorphous silicon oxide intermediate layer, and graphitic outer shells made of boron nitride and carbon layers separated in the radial direction. The structure resembles a coaxial nanocable with a semiconductor-insulator-metal (or semiconductor-insulator-semiconductor) geometry and suggests applications in nanoscale electronic devices that take advantage of this self-organization mechanism for multielement nanotube formation. PMID:9703508

  10. Amorphous carbon nitride as an alternative electrode material in electroanalysis: Simultaneous determination of dopamine and ascorbic acid

    Energy Technology Data Exchange (ETDEWEB)

    Medeiros, Roberta A., E-mail: roantigo@hotmail.com [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil); Matos, Roberto [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil); Benchikh, Abdelkader [LECVE, Faculté de la Technologie, Département de Génie des Procédés, Université Abderrahmane MIRA, Béjaïa (Algeria); LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Saidani, Boualem [LECVE, Faculté de la Technologie, Département de Génie des Procédés, Université Abderrahmane MIRA, Béjaïa (Algeria); Debiemme-Chouvy, Catherine [LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Deslouis, Claude, E-mail: claude.deslouis@upmc.fr [LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil)

    2013-10-03

    Graphical abstract: -- Highlights: •a-CN{sub x} films are a new class of electrodic carbon materials that present several properties similar to those of BDD films. •a-CN{sub x} and BDD were used as working electrodes for simultaneous determination of DA and AA. •Electrochemical pretreatments on a-CN{sub x} or BDD modified the nature of the surface terminations. •An anodic pretreatment in 0.1 mol L{sup −1} KOH was necessary to attain an adequate separation of the DA and AA oxidation potential peaks. •For the first time in the literature, the use of an a-CN{sub x} electrode in a complete electroanalytical procedure is reported. -- Abstract: Boron-doped diamond (BDD) films are excellent electrode materials, whose electrochemical activity for some analytes can be tuned by controlling their surface termination, most commonly either to predominantly hydrogen or oxygen. This tuning can be accomplished by e.g. suitable cathodic or anodic electrochemical pretreatments. Recently, it has been shown that amorphous carbon nitride (a-CN{sub x}) films may present electrochemical characteristics similar to those of BDD, including the influence of surface termination on their electrochemical activity toward some analytes. In this work, we report for the first time a complete electroanalytical method using an a-CN{sub x} electrode. Thus, an a-CN{sub x} film deposited on a stainless steel foil by DC magnetron sputtering is proposed as an alternative electrode for the simultaneous determination of dopamine (DA) and ascorbic acid (AA) in synthetic biological samples by square-wave voltammetry. The obtained results are compared with those attained using a BDD electrode. For both electrodes, a same anodic pretreatment in 0.1 mol L{sup −1} KOH was necessary to attain an adequate and equivalent separation of the DA and AA oxidation potential peaks of about 330 mV. The detection limits obtained for the simultaneous determination of these analytes using the a-CN{sub x

  11. Simulation of single-electron state density for one-wall nanotubes from carbon and boron nitride

    International Nuclear Information System (INIS)

    The single-electron density is calculated for all possible geometrical configurations of the one-wall nanotubes from carbon and boron nitride. The calculation is accomplished through the numerical differentiation of the two-dimensional dispersion ratios for the graphite and hexagonal boron nitride by all permitted values of the wave vector. The π-electron approximation was applied. Good agreement of the energy gaps between the symmetrical singularities in the density of the single-electron states and experimental data obtained through the method of the resonance combination light scattering is demonstrated by the example of the concrete carbon nanotubes

  12. Electromagnetic characteristics of carbon nanotube film materials

    Directory of Open Access Journals (Sweden)

    Zhang Wei

    2015-08-01

    Full Text Available Carbon nanotube (CNT possesses remarkable electrical conductivity, which shows great potential for the application as electromagnetic shielding material. This paper aims to characterize the electromagnetic parameters of a high CNT loading film by using waveguide method. The effects of layer number of CNT laminate, CNT alignment and resin impregnation on the electromagnetic characteristics were analyzed. It is shown that CNT film exhibits anisotropic electromagnetic characteristic. Pristine CNT film shows higher real part of complex permittivity, conductivity and shielding effectiveness when the polarized direction of incident wave is perpendicular to the winding direction of CNT film. For the CNT film laminates, complex permittivity increases with increasing layer number, and correspondingly, shielding effectiveness decreases. The five-layer CNT film shows extraordinary shielding performance with shielding effectiveness ranging from 67 dB to 78 dB in X-band. Stretching process induces the alignment of CNTs. When aligned direction of CNTs is parallel to the electric field, CNT film shows negative permittivity and higher conductivity. Moreover, resin impregnation into CNT film leads to the decrease of conductivity and shielding effectiveness. This research will contribute to the structural design for the application of CNT film as electromagnetic shielding materials.

  13. Simulated radiation effects in the superinsulating phase of titanium nitride films

    Directory of Open Access Journals (Sweden)

    Vujisić Miloš Lj.

    2011-01-01

    Full Text Available This paper investigates possible effects of alpha particle and ion beam irradiation on the properties of the superinsulating phase, recently observed in titanium nitride films, by using numerical simulation of particle transport. Unique physical properties of the superinsulating state are considered by relying on a two-dimensional Josephson junction array as a model of material structure. It is suggested that radiation-induced change of the Josephson junction charging energy would not affect the current-voltage characteristics of the superinsulating film significantly. However, it is theorized that a relapse to an insulating state with thermally activated resistance is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs caused by incident and displaced ions may also destroy the conditions for a superinsulating phase to exist. Finally, even the energy loss to phonons can influence the superinsulating state, by increasing the effective temperature of the phonon thermostat, thereby reestablishing means for an energy exchange that can support Cooper pair tunneling.

  14. Early stages of growth and crystal structure evolution of boron nitride thin films

    Science.gov (United States)

    Henry, Anne; Chubarov, Mikhail; Czigány, Zsolt; Garbrecht, Magnus; Högberg, Hans

    2016-05-01

    A study of the nucleation and crystal structure evolution at the early stages of the growth of sp2-BN thin films on 6H-SiC and α-Al2O3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On α-Al2O3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy.

  15. Direct deposition of cubic boron nitride films on tungsten carbide-cobalt.

    Science.gov (United States)

    Teii, Kungen; Matsumoto, Seiichiro

    2012-10-24

    Thick cubic boron nitride (cBN) films in micrometer-scale are deposited on tungsten carbide-cobalt (WC-Co) substrates without adhesion interlayers by inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD) using the chemistry of fluorine. The residual film stress is reduced because of very low ion-impact energies (a few eV to ∼25 eV) controlled by the plasma sheath potential. Two types of substrate pretreatment are used successively; the removal of surface Co binder using an acid solution suppresses the catalytic effect of Co and triggers cBN formation, and the surface roughening using mechanical scratching and hydrogen plasma etching increases both the in-depth cBN fraction and deposition rate. The substrate surface condition is evaluated by the wettability of the probe liquids with different polarities and quantified by the apparent surface free energy calculated from the contact angle. The surface roughening enhances the compatibility in energy between the cBN and substrate, which are bridged by the interfacial sp(2)-bonded hexagonal BN buffer layer, and then, the cBN overlayer is nucleated and evolved easier. PMID:22950830

  16. Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride

    Science.gov (United States)

    Simmendinger, Julian; Pracht, Uwe S.; Daschke, Lena; Proslier, Thomas; Klug, Jeffrey A.; Dressel, Martin; Scheffler, Marc

    2016-08-01

    We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K ≥Tc≥2.78 K . Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm-1 (0.1 to 1.1 THz). The superconducting energy scales, i.e., the critical temperature Tc, the pairing energy Δ , and the superfluid stiffness J , and the superfluid density ns can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.

  17. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces

    CERN Document Server

    Oshima, C

    1997-01-01

    In this article, we have reviewed the recent progress of the experimental studies on ultra-thin films of graphite and hexagonal boron nitride (h-BN) by using angle-resolved electron spectroscopy together with other techniques. The fundamental properties of these high-quality films are discussed on the basis of the data on dispersion relations of valence electrons, phonon dispersion etc. The interfacial orbital mixing of the pi-state of the monolayer graphite (MG) with the d states of the reactive substrates is the origin for the phonon softening, expansion of the nearest-neighbour C-C distance, modification of the pi-band, low work function, and two-dimensional plasmons with high electron density, etc. In the cases of weak mixing at the interface between the MG and relatively inert substrates, the observed properties of the MG are very close to the bulk ones. In contrast to the case for MG, the interfacial interaction between the h-BN monolayer and the substrate is weak. (author)

  18. Multiwalled carbon nanotube film for strain sensing

    International Nuclear Information System (INIS)

    We have studied the possibility of using multiwalled carbon nanotube (MWCNT) films as strain sensors. The MWCNT films were prepared by a solution/filtration method and were bonded directly onto specimens by a nonconductive adhesive. For comparison, conventional foil strain gages were also bonded to the structure on the opposite side. The specimens then underwent a uniaxial tensile load-unload cycle to evaluate them as strain sensors. To ensure good electrical contact between carbon nanotube film and the wires, a thin layer of copper was thermally deposited on both ends of the film as electrodes, and the wires were connected to the electrodes by silver ink. Wheatstone bridges were used to convert the resistance changes of the MWCNTs to voltage output. Results indicated that the output voltages were proportional to the strain readings from the stain indicator. The effect of temperature on the resistance was measured and the MWCNT film resistance was found to be independent of temperature over the range 273-363 K. The optimal film dimension for strain sensing was evaluated as well. Dynamic tests suggest that the MWCNTs were able to extract the structural signature. Our results indicate that MWCNT film is potentially useful for structural health monitoring and vibration control applications

  19. Role of fluorine atoms in the oxidation-hydrolysis process of plasma assisted chemical vapor deposition fluorinated silicon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O.; Gomez-Aleixandre, C.; Palacio, C. (Universidad Autonoma de Madrid (Spain))

    The oxidation and/or hydrolysis of a plasma assisted chemical vapor deposition fluorinated silicon nitride film in a moisture atmosphere has been studied. The film presents fluorine atoms incorporated as -SiF, -SiF[sub 2], -SiF[sub 3], and [-SiF[sub 2]-][sub n] groups. The open structure of the film, due to the high fluorine content as [-SiF[sub 2]-][sub n], favors the penetration of oxygen and water molecules in the network. The evolution of the film has been explained by the different reactivity of the silicon atoms depending on their chemical environment. The role of fluorine atoms incorporated into the film has been established. 12 refs., 3 figs., 1 tab.

  20. Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

    Science.gov (United States)

    Valour, Arnaud; Cheviré, François; Tessier, Franck; Grasset, Fabien; Dierre, Benjamin; Jiang, Tengfei; Faulques, Eric; Cario, Laurent; Jobic, Stéphane

    2016-04-01

    Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO2 substrate from a ZnO colloidal solution. Zinc peroxide (ZnO2) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H2O2 solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV-Visible transmittance spectroscopy.

  1. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Science.gov (United States)

    Broas, M.; Liu, X.; Ge, Y.; Mattila, T. T.; Paulasto-Kröckel, M.

    2015-06-01

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiNx thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiNx part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiNx. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ˜100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  2. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  3. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    Science.gov (United States)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m‑3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  4. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    International Nuclear Information System (INIS)

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiNx thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiNx part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiNx. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests

  5. Large quantity production of carbon and boron nitride nanotubes by mechano-thermal process

    International Nuclear Information System (INIS)

    Full text: Nanotube materials including carbon and boron nitride have excellent properties compared with bulk materials. The seamless graphene cylinders with a high length to diameter ratio make them as superstrong fibers. A high amount of hydrogen can be stored into nanotubes as future clean fuel source. Theses applications require large quantity of nanotubes materials. However, nanotube production in large quantity, fully controlled quality and low costs remains challenges for most popular synthesis methods such as arc discharge, laser heating and catalytic chemical decomposition. Discovery of new synthesis methods is still crucial for future industrial application. The new low-temperature mechano-thermal process discovered by the current author provides an opportunity to develop a commercial method for bulk production. This mechano-thermal process consists of a mechanical ball milling and a thermal annealing processes. Using this method, both carbon and boron nitride nanotubes were produced. I will present the mechano-thermal method as the new bulk production technique in the conference. The lecture will summarise main results obtained. In the case of carbon nanotubes, different nanosized structures including multi-walled nanotubes, nanocells, and nanoparticles have been produced in a graphite sample using a mechano-thermal process, consisting of I mechanical milling at room temperature for up to 150 hours and subsequent thermal annealing at 1400 deg C. Metal particles have played an important catalytic effect on the formation of different tubular structures. While defect structure of the milled graphite appears to be responsible for the formation of small tubes. It is found that the mechanical treatment of graphite powder produces a disordered and microporous structure, which provides nucleation sites for nanotubes as well as free carbon atoms. Multiwalled carbon nanotubes appear to grow via growth of the (002) layers during thermal annealing. In the case of BN

  6. Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

    International Nuclear Information System (INIS)

    An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2

  7. Zr N and Zr O2 production by zirconium carbon nitridation (Zr Si O4)

    International Nuclear Information System (INIS)

    Structural ceramics based on nitrides, oxynitrides like, Zr N-Si3 N4 and Zr O2 Si2 O N2 have good thermal and mechanical properties, with curves in technological applications. Many obtention methods are propose, but carbonitriding reactions (carbon reduction and simultaneous nitriding) of zircon (Zr O2 Si O2) may be interest because a low cost raw material is used. In this work the carbonitriding of zircon and the principal reaction conditions: carbon quantity, N2 flow, temperature and reaction time are studied. The phases formed were followed using XRD and the weight loss of the samples. The final products were: Zr N with low content of Si C and/or Si3 N4 or the monoclinic form of Zr O2. The products be obtained can be predicted according to the reaction conditions employed. During the reaction Si O(g) loss is observed and silica can be completely eliminated if reaction conditions are adjusted. (author)

  8. Mechanical and Structural Properties of Graphene-like Carbon Nitride Sheets

    CERN Document Server

    de Sousa, J M; Perim, E; Bizao, R A; Galvao, Douglas S

    2016-01-01

    Carbon nitride-based nanostructures have attracted special attention (from theory and experiments) due to their remarkable electromechanical properties. In this work we have investigated the mechanical properties of some graphene-like carbon nitride membranes through fully atomistic reactive molecular dynamics simulations. We have analyzed three different structures of these CN families, the so-called graphene-based g-CN, triazine-based g-C3N4 and heptazine-based g-C3N4. The stretching dynamics of these membranes was studied for deformations along their two main axes and at three different temperatures: 10K, 300K and 600K. We show that g-CN membranes have the lowest ultimate fracture strain value, followed by heptazine-based and triazine-based ones, respectively. This behavior can be explained in terms of their differences in terms of density values, topologies and types of chemical bonds. The dependency of the fracture patterns on the stretching directions is also discussed.

  9. An alkali treating strategy for the colloidization of graphitic carbon nitride and its excellent photocatalytic performance.

    Science.gov (United States)

    Cheng, Fuxing; Yan, Jing; Zhou, Chenjuan; Chen, Binhe; Li, Peiran; Chen, Zhi; Dong, Xiaoping

    2016-04-15

    The colloid of graphitic carbon nitride (g-C3N4) was of great importance for practical application. Herein we introduced an alkali treatment route to efficiently colloidize g-C3N4 under mild conditions by destroying the hydrogen bonds between linearly polymeric melon chains and hydrolyzing partial C−NH−C bonds linked two tri-s-triazine units. The obtained colloidal suspension was extremely stable due to its negative charges on surface, and the particle size of several hundred nanometers and the nanobelt-like morphology were revealed by electron microscopy and dynamic light scattering technologies. The structural, optical and functional group analysis demonstrated that the structure of CN heterocycles was preserved after the alkali treatment, and the produced colloidal g-C3N4 can be re-assembled by an electrostatic interaction. Moreover, contributing to the reduced electron-hole recombination, the photocatalytic performance of restacked carbon nitride colloids had more enhanced photocatalytic performance than bulk g-C3N4. PMID:26835580

  10. Li and Na Co-decorated carbon nitride nanotubes as promising new hydrogen storage media

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu Sheng [Center of Clean Energy and Quantum Structures, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan, 450052 (China); College of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou, Henan, 450011 (China); Li, Meng; Wang, Fei; Sun, Qiang [Center of Clean Energy and Quantum Structures, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan, 450052 (China); Jia, Yu, E-mail: jiayu@zzu.edu.cn [Center of Clean Energy and Quantum Structures, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan, 450052 (China)

    2012-01-09

    The capacity of Li and Na co-decorated carbon nitride nanotube (CNNT) for hydrogen storage is studied using first-principles density functional theory. The results show that with two H{sub 2} molecules attached to per Li and four H{sub 2} molecules per Na the Li and Na co-decorated CNNT gains a gravimetric density of H{sub 2} as high as 9.09 wt% via electrostatic interaction without the clustering of the deposited metal atoms (at T=0 K). The average adsorption energy of hydrogen molecule is in the range of 0.09–0.22 eV/H{sub 2}, which is suitable for practical hydrogen storage at ambient temperatures. -- Highlights: ► Li and Na co-decorated carbon nitride nanotubes as hydrogen storage media. ► The gravimetric density of H{sub 2} is 9.09 wt%. ► The average adsorption energy of hydrogen molecule is 0.09–0.22 eV/H{sub 2}. ► It can operate under ambient thermodynamic conditions.

  11. Highly Efficient Quantum Sieving in Porous Graphene-like Carbon Nitride for Light Isotopes Separation

    Science.gov (United States)

    Qu, Yuanyuan; Li, Feng; Zhou, Hongcai; Zhao, Mingwen

    2016-01-01

    Light isotopes separation, such as 3He/4He, H2/D2, H2/T2, etc., is crucial for various advanced technologies including isotope labeling, nuclear weapons, cryogenics and power generation. However, their nearly identical chemical properties made the separation challenging. The low productivity of the present isotopes separation approaches hinders the relevant applications. An efficient membrane with high performance for isotopes separation is quite appealing. Based on first-principles calculations, we theoretically demonstrated that highly efficient light isotopes separation, such as 3He/4He, can be reached in a porous graphene-like carbon nitride material via quantum sieving effect. Under moderate tensile strain, the quantum sieving of the carbon nitride membrane can be effectively tuned in a continuous way, leading to a temperature window with high 3He/4He selectivity and permeance acceptable for efficient isotopes harvest in industrial application. This mechanism also holds for separation of other light isotopes, such as H2/D2, H2/T2. Such tunable quantum sieving opens a promising avenue for light isotopes separation for industrial application.

  12. Integrated oxygen-doping and dye sensitization of graphitic carbon nitride for enhanced visible light photodegradation.

    Science.gov (United States)

    Liu, Shizhen; Sun, Hongqi; Ang, H M; Tade, Moses O; Wang, Shaobin

    2016-08-15

    Graphitic carbon nitride (GCN) is a promising metal-free photocatalyst while suffering from low charge mobility induced inefficient photocatalysis. In this work, oxygen doping was employed to enhance the photodegradation of organic pollutants in water on graphitic carbon nitride (GCNO) under visible light. For further absorption extension, four organic dyes (Eosin-Y, Perylene, Nile-red and Coumarin) were adopted to dye-sensitize the GCNO photocatalyst. It was found that O-doping can promote dye sensitization, which was dependent on the type of dyes and influenced the photodegradation efficiencies of methylene blue (MB) and phenol. Nile-red sensitized GCNO presented the best activity in MB degradation under λ>480nm irradiations while Eosin-Y showed the best sensitization performance for phenol degradation under λ>420nm light source. However, dye sensitization was not effective for enhanced pollutant degradation on GCN without O-doping. UV-vis diffuse reflectance spectra (UV-vis DRS), photoluminescence (PL) spectra, and photocurrent analyses were applied to investigate the mechanism of carriers' transfer, which indicated that dye molecules could inject extra electrons into GCNO energy band and the energy dislocation could suppress electron/hole recombination, enhancing photocatalytic performances. PMID:27218807

  13. Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO2/SixNy bimaterial microbridge test structure

    International Nuclear Information System (INIS)

    In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure, a silicon-rich silicon nitride film with tensile stress is deposited by plasma enhanced chemical vapor deposition process. Accurately measuring the thermal conductivity of the film is highly desirable in order to design, simulate and optimize MEMS devices. In this paper, a SiO2/SixNy bimaterial microbridge structure is presented to measure the thermal conductivity of the silicon-rich silicon nitride film by single steady-state measurement. The thermal conductivity is extracted as 3.25 W/(m·K). Low thermal conductivity indicates that the silicon-rich silicon nitride film can still be utilized as thermally insulating material in thermal sensors although its thermal conductivity is slightly larger than the values reported in literature. (semiconductor technology)

  14. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

    Science.gov (United States)

    Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Wang, Haiyan

    2015-11-01

    Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of group III-nitrides on thermally active substrates at low temperature. The precursors generated from the pulsed laser ablating the target has enough kinetic energy when arriving at substrates, thereby effectively suppressing the interfacial reactions between the epitaxial films and the substrates, and eventually makes the film growth at low temperature possible. So far, high-quality group III-nitride epitaxial films have been successfully grown on a variety of thermally active substrates by PLD. By combining PLD with other technologies such as laser rastering technique, molecular beam epitaxy (MBE), and metal-organic chemical vapor deposition (MOCVD), III-nitride-based light-emitting diode (LED) structures have been realized on different thermally active substrates, with high-performance LED devices being demonstrated. This review focuses on the epitaxial growth of group III-nitrides on thermally active substrates by PLD and their use in the development of LED devices. The surface morphology, interfacial property between film and substrate, and crystalline quality of as-grown group III-nitride films by PLD, are systematically reviewed. The corresponding solutions for film homogeneity on large size substrates, defect control, and InGaN films growth by PLD are also discussed in depth, together with introductions to some newly developed technologies for PLD in order to realize LED structures, which provides great opportunities for commercialization of LEDs on thermally active substrates.

  15. Preparation of carbon nitride fine powder by laser induced gas-phase reactions

    Science.gov (United States)

    Alexandrescu, R.; Huisken, F.; Pugna, G.; Crunteanu, A.; Petcu, S.; Cojocaru, S.; Cireasa, R.; Morjan, I.

    We present the possibility of carbon nitride fine powder synthesis by sensitized laser pyrolysis of acethylene/nitrous oxide/ammonia mixtures. The powders were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and IR transmission measurements. It was found that nitrogen was incorporated in powders and that in the carbon-nitrogen phases formed, the presence of the triple bonded C≡N was not detected. The majority of X-ray diffraction data suggests the presence of a mixture of the predicted α- and β-C3N4 structure, with an α-C3N4-like form being prevalent. The powders were found to be slightly contaminated by SF6 sensitizer products. Our results suggest that by improving the experimental parameters this contamination might be reduced and that the laser pyrolysis method offers possibilities for production of CxNy materials, with controlled composition.

  16. In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

    2011-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  17. In situ mechanical property measurements of amorphous carbon-boron nitride nanotube nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Carpena Núñez, Jennifer; Siochi, Emilie J.; Wise, Kristopher E.; Lin, Yi; Connell, John W.; Smith, Michael W.

    2012-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  18. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    P N Vishwakarma; V Prasad; S V Subramanyam; V Ganesan

    2005-10-01

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM data shows surface roughness of carbon films depending on preparation temperatures. The surface roughness increases with decrease in preparation temperature. Also some nucleating islands were seen on the samples prepared at 900°C, which are not present on the films prepared at 700°C. Detailed analysis of these islands reveals distorted graphitic lattice arrangement. So we believe these islands to be nucleating graphitic. Power spectrum density (PSD) analysis of the carbon surface indicates a transition from the nonlinear growth mode to linear surface-diffusion dominated growth mode resulting in a relatively smoother surface as one moves from low preparation temperature to high preparation temperature. The amorphous carbon films deposited over a rough quartz substrate reveal nucleating diamond like structures. The density of these nucleating diamond like structures was found to be independent of substrate temperature (700–900°C).

  19. Damage effects from medium-energy ion bombardment during the growth of cubic-boron nitride films

    International Nuclear Information System (INIS)

    Cubic-boron nitride (c-BN) films with low stress have been produced by simultaneous 35 keV N+ ion implantation during growth by ion assisted sputtering. The stress release is achieved at the lost of a decrease in the c-BN content. Despite this fact, films with a high c-BN content and relatively large thickness (∼0.4 μm) have been produced. The decrease on the c-BN content is discussed in terms of the damage induced by the medium-energy ion implantation

  20. Nanostructured carbon films with oriented graphitic planes

    International Nuclear Information System (INIS)

    Nanostructured carbon films with oriented graphitic planes can be deposited by applying energetic carbon bombardment. The present work shows the possibility of structuring graphitic planes perpendicular to the substrate in following two distinct ways: (i) applying sufficiently large carbon energies for deposition at room temperature (E>10 keV), (ii) utilizing much lower energies for deposition at elevated substrate temperatures (T>200 deg. C). High resolution transmission electron microscopy is used to probe the graphitic planes. The alignment achieved at elevated temperatures does not depend on the deposition angle. The data provides insight into the mechanisms leading to the growth of oriented graphitic planes under different conditions.

  1. Correlation between photo response and nanostructures of silicon quantum dots in annealed Si-rich nitride films

    International Nuclear Information System (INIS)

    Synthesis and characterization of silicon quantum dots (Si QDs) materials are carried out. The Si QDs were prepared from a hydrogenated silicon rich nitride film that is deposited by the plasma enhanced chemical vapor deposition process with a gas mixture of SiH4 and NH3 at flow ratios from 0.5 to 2. The Si QDs can be precipitated from the hydrogenated silicon rich nitride film by a high temperature annealing. The optimum density of the Si QDs precipitated amounts to 6.4 × 1012 cm−2, as calculated from transmission electron microscope images, for flow ratio of SiH4 versus NH3 at 2, and particle sizes less than 6 nm. The dots density within the film becomes concentrated when the flow ratio of SiH4 versus NH3 increases. The intensity of photo response increases drastically when the dots density becomes large. - Highlights: ► Silicon quantum dots (Si QDs) precipitated from deposited films were identified. ► All Si QDs obtained exhibit similar sizes but different densities. ► Correlation between photo response and amount of Si QDs was established. ► The photo response increases with increasing density of Si QDs in the film

  2. Hollow porous carbon nitride immobilized on carbonized nanofibers for highly efficient visible light photocatalytic removal of NO.

    Science.gov (United States)

    Wu, Hongxin; Chen, Dongyun; Li, Najun; Xu, Qingfeng; Li, Hua; He, Jinghui; Lu, Jianmei

    2016-06-01

    With the deterioration of air quality, great efforts were devoted to designing various photocatalysts for effective removal of NOx in air. However, the present photocatalysts have a fatal problem of low photocatalytic efficiency. In this work, a hollow porous carbon nitride nanosphere coupled with reduced graphene oxide (HCNS/rGO) was exploited as a visible-light photocatalyst to remove nitrogen monoxide in air at a low concentration (600 ppb level) under irradiation of an energy saving lamp. HCNS/rGO showed a NO removal ratio of 64%, which was superior to that of most other visible-light photocatalysts. The excellent photocatalytic ability of HCNS/rGO originates from the hollow porous morphology of HCNS and the grafted rGO on the surface. HCNS/rGO was immobilized on porous carbonized polymer nanofibers to obtain a photocatalytic membrane without affecting photocatalytic efficiency. Furthermore, the membrane showed excellent photochemical stability and recyclability. PMID:27245319

  3. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    International Nuclear Information System (INIS)

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  4. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Zobelli, A

    2007-10-15

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  5. Merging Single-Atom-Dispersed Silver and Carbon Nitride to a Joint Electronic System via Copolymerization with Silver Tricyanomethanide.

    Science.gov (United States)

    Chen, Zupeng; Pronkin, Sergey; Fellinger, Tim-Patrick; Kailasam, Kamalakannan; Vilé, Gianvito; Albani, Davide; Krumeich, Frank; Leary, Rowan; Barnard, Jon; Thomas, John Meurig; Pérez-Ramírez, Javier; Antonietti, Markus; Dontsova, Dariya

    2016-03-22

    Herein, we present an approach to create a hybrid between single-atom-dispersed silver and a carbon nitride polymer. Silver tricyanomethanide (AgTCM) is used as a reactive comonomer during templated carbon nitride synthesis to introduce both negative charges and silver atoms/ions to the system. The successful introduction of the extra electron density under the formation of a delocalized joint electronic system is proven by photoluminescence measurements, X-ray photoelectron spectroscopy investigations, and measurements of surface ζ-potential. At the same time, the principal structure of the carbon nitride network is not disturbed, as shown by solid-state nuclear magnetic resonance spectroscopy and electrochemical impedance spectroscopy analysis. The synthesis also results in an improvement of the visible light absorption and the development of higher surface area in the final products. The atom-dispersed AgTCM-doped carbon nitride shows an enhanced performance in the selective hydrogenation of alkynes in comparison with the performance of other conventional Ag-based materials prepared by spray deposition and impregnation-reduction methods, here exemplified with 1-hexyne. PMID:26863408

  6. Preparation of single-walled carbon nanotube reinforced magnesia films

    OpenAIRE

    Du, C S; Pan, Ning

    2004-01-01

    Single-walled carbon nanotube (SWNT)/MgO composite films were fabricated by growing carbon nanotubes while simultaneously sintering a MgO film. The effect of iron and molybdenum concentrations in liquid catalysts and the effect of the density of carbon nanotubes in the composite films on the quality of the films were investigated. Microstructure analysis showed that SWNTs were uniformly grown in the MgO film. The presence of a controlled amount of carbon nanotubes in MgO films is believed to ...

  7. Hollow porous carbon nitride immobilized on carbonized nanofibers for highly efficient visible light photocatalytic removal of NO

    Science.gov (United States)

    Wu, Hongxin; Chen, Dongyun; Li, Najun; Xu, Qingfeng; Li, Hua; He, Jinghui; Lu, Jianmei

    2016-06-01

    With the deterioration of air quality, great efforts were devoted to designing various photocatalysts for effective removal of NOx in air. However, the present photocatalysts have a fatal problem of low photocatalytic efficiency. In this work, a hollow porous carbon nitride nanosphere coupled with reduced graphene oxide (HCNS/rGO) was exploited as a visible-light photocatalyst to remove nitrogen monoxide in air at a low concentration (600 ppb level) under irradiation of an energy saving lamp. HCNS/rGO showed a NO removal ratio of 64%, which was superior to that of most other visible-light photocatalysts. The excellent photocatalytic ability of HCNS/rGO originates from the hollow porous morphology of HCNS and the grafted rGO on the surface. HCNS/rGO was immobilized on porous carbonized polymer nanofibers to obtain a photocatalytic membrane without affecting photocatalytic efficiency. Furthermore, the membrane showed excellent photochemical stability and recyclability.With the deterioration of air quality, great efforts were devoted to designing various photocatalysts for effective removal of NOx in air. However, the present photocatalysts have a fatal problem of low photocatalytic efficiency. In this work, a hollow porous carbon nitride nanosphere coupled with reduced graphene oxide (HCNS/rGO) was exploited as a visible-light photocatalyst to remove nitrogen monoxide in air at a low concentration (600 ppb level) under irradiation of an energy saving lamp. HCNS/rGO showed a NO removal ratio of 64%, which was superior to that of most other visible-light photocatalysts. The excellent photocatalytic ability of HCNS/rGO originates from the hollow porous morphology of HCNS and the grafted rGO on the surface. HCNS/rGO was immobilized on porous carbonized polymer nanofibers to obtain a photocatalytic membrane without affecting photocatalytic efficiency. Furthermore, the membrane showed excellent photochemical stability and recyclability. Electronic supplementary information

  8. Constructing a novel carbon nitride/polyaniline/ZnO ternary heterostructure with enhanced photocatalytic performance using exfoliated carbon nitride nanosheets as supports.

    Science.gov (United States)

    Pandiselvi, Kannusamy; Fang, Huaifang; Huang, Xiubo; Wang, Jingyu; Xu, Xiaochan; Li, Tao

    2016-08-15

    Graphitic carbon nitride (CN) is an emerging photocatalyst with promising prospect, but presently it still falls short on photocatalytic efficiency and photoresponsive range. We herein constructed a novel ternary heterostructure by hybridization of conducting polymer and semiconductor with CN. The exfoliated two dimension CN nanosheets (CN-NSs) are superior to bulk CN as both catalysts and supporting materials. Most recently, there are few reports involving the construction of heterojunction photocatalysts using CN-NSs as supports. The improvement of charge separation efficiency, specific surface area and visible light harvesting is simultaneously achieved in such a novel ternary heterostructure due to the synergetic effect of polyaniline (PANI) and ZnO coupling. As a result, the CN-NS/PANI/ZnO photocatalyst possesses excellent visible photocatalytic performance for MB and 4-CP degradation with a rate constant of 0.026 and 0.0049min(-1), which is about 3.6 and 3.3 times of CN, respectively. The enhanced mechanism is proposed based on the confirmation of OH and h(+) as main oxidative species. Overall, this work can not only yield high-efficient visible photocatalysts but also provide deeper insight into the enhanced mechanisms of CN-NS-based ternary heterostructure. PMID:27107237

  9. Ultra-thin superconducting film coated silicon nitride nanowire resonators for low-temperature applications

    Science.gov (United States)

    Sebastian, Abhilash; Zhelev, Nikolay; de Alba, Roberto; Parpia, Jeevak

    We demonstrate fabrication of high stress silicon nitride nanowire resonators with a thickness and width of less than 50 nm intended to be used as probes for the study of superfluid 3He. The resonators are fabricated as doubly-clamped wires/beams using a combination of electron-beam lithography and wet/dry etching techniques. We demonstrate the ability to suspend (over a trench of depth ~8 µm) wires with a cross section as small as 30 nm, covered with a 20 nm superconducting film, and having lengths up to 50 µm. Room temperature resonance measurements were carried out by driving the devices using a piezo stage and detecting the motion using an optical interferometer. The results show that metalizing nano-mechanical resonators not only affects their resonant frequencies but significantly reduce their quality factor (Q). The devices are parametrically pumped by modulating the system at twice its fundamental resonant frequency, which results in observed amplification of the signal. The wires show self-oscillation with increasing modulation strength. The fabricated nanowire resonators are intended to be immersed in the superfluid 3He. By tracking the resonant frequency and the Q of the various modes of the wire versus temperature, we aim to probe the superfluid gap structure.

  10. Interaction of deuterium plasma with sputter-deposited tungsten nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Liang [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstr. 2, 85748 Garching (Germany); Ruhr-Universitaet, Bochum, Universitaetsstrasse 150, 44801 Bochum (Germany); Jacob, Wolfgang; Schwarz-Selinger, Thomas; Manhard, Armin; Meisl, Gerd [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstr. 2, 85748 Garching (Germany)

    2015-05-01

    N2 seeding is frequently used for radiative power dissipation in fusion devices with full-tungsten divertor, such as ASDEX-Upgrade and JET. N implantation into W or redeposition of W in the presence of N may produce N-containing W surfaces. Magnetron-sputtered tungsten nitride (WN{sub x}) films were exposed to deuterium (D) plasmas to mimic the interaction of D plasmas with such re-deposited layers. RBS and NRA were employed to measure the composition of WN{sub x}, erosion by D plasma and D retention. D implantation was performed with ion energies below 215 eV at sample temperatures of 300 K and 600 K. Low energy Ar plasma exposure was combined with NRA measurements for D depth profiling in the uppermost nanometers. The experimental results are compared with SDTRIM.SP simulations. Results show that D was only retained within the ion penetration range for samples exposed at 300 K. At 600 K, the total amount of retained D decreases by 50% compared with 300 K and D diffuses beyond the implantation zone. Annealing of the WN prior to D implantation can partially heal the D trap-sites thus reducing the retained D in the implantation zone by about 10%.

  11. Mechanical Properties Analysis of Iron-Nitride Thin Film on the Aluminium Substrate

    International Nuclear Information System (INIS)

    Deposition of iron-nitride thin film on the surface aluminium substrate has been done by plasma DC sputtering technique. The deposition process was done with the following process parameters variations: deposition time was at (15 to 60 min), substrate temperature (150 to 300℃), and ratio of N2/Ar gas (0.25 to 0.45). The purpose of the research is to study the mechanical properties and micro structure of surfaces materials including concentration of Fe and N2 elements. The micro hardness testing was done using Digital Type Microhardness Tester MX T70, while the micro structure and elements composition were observed by using SEM and EDS. It was obtained that the hardness of Al substrate increased by about 283% and this was achieved at substrate temperature of 150℃, deposition time 60 min, ratio of N2/Ar gas is 0.25 and 5 µm of depth, while the concentration of N2 and Fe elements in 25 µm of depth are 1.18 and 2.72 At%, respectively. (author)

  12. The effects of rare earth doping on gallium nitride thin films

    Science.gov (United States)

    McHale, Stephen R.

    The thermal neutron capture cross section of the rare earth (RE) metal isotope Gd-157 is the largest of all known natural elements, which distinguishes the material as a logical candidate for neutron detection. To address an incomplete understanding of rare earth doped Gallium Nitride (GaN) materials, investigations of the surface electronic structure and interface properties of GaN thin films doped with rare earths (Yb, Er, Gd) were undertaken. Lattice ion occupation, bonding, rare earth 4f occupation, and gold Schottky barrier formation were examined using synchrotron photoemission spectroscopy. Measured Debye temperatures indicate substitutional occupation of Ga sites by RE ions. The occupied RE 4f levels, deep within the valence band, suggest that intra-atomic f-f transitions may be more 'blue' than predicted by theoretical models. Thin layers of gold did not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. The resultant Schottky barrier heights for GaN:Yb, GaN:Er, and GaN:Gd, are 25--55% larger than those reported at the gold to undoped GaN interface. The utility of gadolinium as a neutron detection material was examined via fundamental nuclear and semiconductor physics. Low charge production and the large range of internal conversion electrons limits charge collection efficiency.

  13. Growth and Contrast of Hexagonal Boron Nitride: From Submonolayer Islands to Multilayer Films

    Science.gov (United States)

    Koepke, Justin; Wood, Joshua; Pop, Eric; Lyding, Joseph

    2013-03-01

    Strong interest in hexagon boron nitride (h-BN) as a substrate for graphene devices or as a template for growth of other layered compounds has motivated recent attempts to synthesize large scale h-BN by chemical vapor deposition (CVD). We synthesize h-BN by low pressure CVD on polycrystalline Cu foil in a hot wall tube furnace with a heated ammonia borane precursor carried downstream by Ar and H2 gas. Transmission electron microscopy (TEM) diffraction patterns show that the resulting growths are highly crystalline, with several layers obtained for longer growth times. Short growth times show that the h-BN nucleates in triangular islands at a higher precursor temperature than previously reported in and a lower temperature than reported in. In-air calcination of the Cu foils after partial h-BN growth allows optical contrast of the previously transparent h-BN islands on the Cu foil. This observed resistance to oxidation suggests that grown h-BN films can serve as an insulating anti-corrosion layer.

  14. Interaction of deuterium plasma with sputter-deposited tungsten nitride films

    International Nuclear Information System (INIS)

    N2 seeding is frequently used for radiative power dissipation in fusion devices with full-tungsten divertor, such as ASDEX-Upgrade and JET. N implantation into W or redeposition of W in the presence of N may produce N-containing W surfaces. Magnetron-sputtered tungsten nitride (WNx) films were exposed to deuterium (D) plasmas to mimic the interaction of D plasmas with such re-deposited layers. RBS and NRA were employed to measure the composition of WNx, erosion by D plasma and D retention. D implantation was performed with ion energies below 215 eV at sample temperatures of 300 K and 600 K. Low energy Ar plasma exposure was combined with NRA measurements for D depth profiling in the uppermost nanometers. The experimental results are compared with SDTRIM.SP simulations. Results show that D was only retained within the ion penetration range for samples exposed at 300 K. At 600 K, the total amount of retained D decreases by 50% compared with 300 K and D diffuses beyond the implantation zone. Annealing of the WN prior to D implantation can partially heal the D trap-sites thus reducing the retained D in the implantation zone by about 10%.

  15. Formation of ion tracks in amorphous silicon nitride films with MeV C60 ions

    International Nuclear Information System (INIS)

    Amorphous silicon nitride (a-SiN) films (thickness 5–100 nm) were irradiated with 0.12–5 MeV C60, 100 MeV Xe, 200 MeV Kr, and 200 and 420 MeV Au ions. Ion tracks were clearly observed using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) except for 100 MeV Xe and 200 MeV Kr. The observed HAADF-STEM images showed that the ion tracks consist of a low density core (0.5–2 nm in radius) and a high density shell (several nm in radius). The observed core and shell radii are not simply correlated with the electronic energy loss indicating that the nuclear energy loss plays an important role in the both core and shell formations. The observed track radii were well reproduced by the unified thermal spike model with two thresholds for shell and core formations

  16. Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of − 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)–N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar–N2 mixed gas. The effect of the addition time of the hydrogen to the Ar–N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained. - Highlights: • A nanocrystalline diamond (NCD) buffer layer was applied to enhance the adhesion. • Hydrogen in the reaction gas caused delamination of the film at c-BN/NCD interface. • A delayed hydrogen addition was effective in inhibiting such delamination. • About 3 μm thick c-BN film could be grown

  17. Recent advances in the growth, doping and characterization of III V nitride thin films

    Science.gov (United States)

    Davis, Robert F.; Ailey, K. S.; Bremser, M. D.; Carlson, E.; Kern, R. S.; Kester, D. J.; Perry, W. G.; Tanaka, S.; Weeks, T. W.

    Boron nitride thin films have been grown on the (100) surfaces of Si and diamond via ion beam assisted deposition (IBAD) using electron beam evaporation of B in tandem with N and Ar ion bombardment within the ranges of substrate temperature and ion flux of 200-700°C and 0.20-0.30 mA/cm2, respectively. Fourier-transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM) revealed a growth sequence of amorphous (a-BN), hexagonal (h-BN) and cubic (c-BN) layers under most conditions. This sequence is attributed primarily to increasing biaxial compressive stress with film thickness due to ion bombardment and some interstitial Ar incorporation. A minimum substrate temperature of 200-300° C is required for nucleation and growth of single phase c-BN by this technique. The initial stage of AlN film growth on α(6H)-SiC(0001) substrates by plasma-assisted, gas source molecular beam epitaxy has been investigated in terms of growth mode and interface defects. Essentially atomically flat AlN surfaces, indicative of two-dimensional growth, were obtained using on-axis substrates. Island-like features were observed on the vicinal surfaces. The coalescence of latter features gave rise to double positioning boundaries as a result of the misalignment of the Si/C bilayer steps with the Al/N bilayers in the growing films. The quality of the thicker AlN films was strongly influenced by the concentration of these boundaries. Monocrystalline GaN and AlxGa1-x N(0001) (0≤x≤1) films, void of oriented domain structures and associated low-angle grain boundaries and with smooth surface morphologies, have been grown via OMVPE on high-temperature monocrystalline AlN(0001) buffer layers, previously deposited on vicinal α(6H)-SiC(0001) wafers, using TEG, TEA and ammonia in a cold-wall, vertical, pancake-style reactor. Abrupt heterojunctions were demonstrated. The PL spectrum of the pure GaN showed strong near band-edge emissions with a FWHM value of 4 me

  18. Structural and optical characterization of pure Si-rich nitride thin films

    Science.gov (United States)

    Debieu, Olivier; Nalini, Ramesh Pratibha; Cardin, Julien; Portier, Xavier; Perrière, Jacques; Gourbilleau, Fabrice

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiN x>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiN x0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiN x>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

  19. Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels

    Science.gov (United States)

    Thomas, R.; Benoit, D.; Clément, L.; Morin, P.; Cooper, D.; Bertin, F.

    2011-11-01

    In order to reach high levels of transistor performance, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in the conduction channel is to generate strain in the structure using process-induced stress. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhanced chemical vapour deposition on top of the metal oxide semiconductor assembly, is widely used since it is a low-cost technique. Indeed, this film possesses an intrinsic stress that can be set from tensile (σ = 1.6 GPa) to compressive (σ = -3.0 GPa) depending on deposition conditions. From an electrical point of view, strain induced in the silicon channel can lead to an increase of carrier mobility as high as 8-10% which in turn increases Ion/Ioff and decreases switching time of the transistor. Usually, strain induced in the channel is very low (0.1-0.3%), making quantitative measurements challenging. Moreover, stress transmission mechanisms are not fully understood at the nano-metre scale. To evaluate stress transmission in the silicon channel, we used dark-field electron holography characterization technique operating on both the Titan and Tecnai F20 transmission electron microscopes. Strain maps with nanometre spatial resolution, high sensitivity (Δɛ≈10-3%) and large field of view (400-500 nm2) have been obtained on CESL strained devices. In order to understand stress transfer mechanisms, we have analysed structures with varying spacing between patterns. The experimental results are compared to those obtained by 2-D finite elements analysis simulation.

  20. Dielectric response of carbon and boron nitride nanotubes from first-principles calculations

    Science.gov (United States)

    Kozinsky, Boris; Marzari, Nicola

    2007-03-01

    We present a complete characterization of the dielectric response of isolated single- and multi-wall carbon (CNT) and boron-nitride nanotubes (BNNT) using first-principles calculations and density-functional theory. The longitudinal polarizability of a nanotube is sensitive to the band gap and its radius, and in multi-wall nanotubes and bundles it is trivially given by the sum of the polarizabilities of the constituent tubes. The transverse polarizability of both types of nanotubes is insensitive to band gap and chirality and depends only on the radius. However, the transverse response and screening properties of BNNTs are qualitatively different from those of metallic and semiconducting CNTs. The fundamental differences in electronic properties of the two materials are inherited from the corresponding two-dimensional sheets - graphene and boron-nitride. The screening of the external field in CNTs is stronger than in BNNTs and has a different radius dependence. The transverse response in BNNTs is found to be that of an insulator, while in CNTs it is intermediate between metallic and semiconducting. Our results have practical implications for selective growth of different types of nanotubes using aligning electric fields and for Raman characterization of nanotubes.

  1. Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

    International Nuclear Information System (INIS)

    We report the effects of isothermal annealing on the current component, the paramagnetic K0 centers, and charge accumulation, induced by exposing silicon nitride films and silicon nitride–silicon dioxide double-layer films to 4.9-eV ultraviolet (UV) illumination. The UV-induced current component decayed as a result of the isothermal annealing at temperatures ranging from 27 °C to 240 °C, and was induced once again by UV exposure following the annealing. The density of the current component showed a close correlation with the density of the K0 centers. Based on detailed analysis, we show that electron–hole pair generation in the bulk of the silicon nitride film is the possible source of the UV-induced current component. - Highlights: • We report the thermal stability of the UV-light-induced current in Si3N4 films. • The UV-induced current component decayed as a result of the thermal annealing. • The UV-induced current showed a high correlation with K0 center density. • We claim that electron–hole pair generation is the source of the current component

  2. Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 1019–1021 cm−3 while the Hall mobilities ranged from 50–130 cm2·V−1·s−1 for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions

  3. Magnetic graphitic carbon nitride anion exchanger for specific enrichment of phosphopeptides.

    Science.gov (United States)

    Zhu, Gang-Tian; He, Xiao-Mei; Chen, Xi; Hussain, Dilshad; Ding, Jun; Feng, Yu-Qi

    2016-03-11

    Anion-exchange chromatography (AEX) is one of the chromatography-based methods effectively being used for phosphopeptide enrichment. However, the development of AEX materials with high specificity toward phosphopeptides is still less explored as compared to immobilized metal affinity chromatography (IMAC) or metal oxide affinity chromatography (MOAC). In this work, magnetic graphitic carbon nitride (MCN) was successfully prepared and introduced as a promising AEX candidate for phosphopeptide enrichment. Due to the extremely abundant content of nitrogen with basic functionality on the surface, this material kept excellent retention for phosphopeptides at pH as low as 1.8. Benefiting from the large binding capacity at such low pH, MCN showed remarkable specificity to capture phosphopeptides from tryptic digests of standard protein mixtures as well as nonfat milk and human serum. In addition, MCN was also applied to selective enrichment of phosphopeptides from the tryptic digests of rat brain lysate and 2576 unique phosphopeptides were successfully identified. PMID:26884140

  4. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ram Sevak, E-mail: singh915@gmail.com [Department of Physics, National Institute of TechnologyKurukshetra 136119 (Haryana) (India)

    2015-11-15

    Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  5. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    International Nuclear Information System (INIS)

    Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices

  6. Invisible Security Ink Based on Water-Soluble Graphitic Carbon Nitride Quantum Dots.

    Science.gov (United States)

    Song, Zhiping; Lin, Tianran; Lin, Lihua; Lin, Sen; Fu, Fengfu; Wang, Xinchen; Guo, Liangqia

    2016-02-18

    Stimuli-responsive photoluminescent (PL) materials have been widely used as fluorescent ink for data security applications. However, traditional fluorescent inks are limited in maintaining the secrecy of information because the inks are usually visible by naked eyes either under ambient light or UV-light illumination. Here, we introduced metal-free water-soluble graphitic carbon nitride quantum dots (g-CNQDs) as invisible security ink for information coding, encryption, and decryption. The information written by the g-CNQDs is invisible in ambient light and UV light, but it can be readable by a fluorescence microplate reader. Moreover, the information can be encrypted and decrypted by using oxalic acid and sodium bicarbonate as encryption reagent and decryption reagent, respectively. Our findings provide new opportunities for high-level information coding and protection by using water-soluble g-CNQDs as invisible security ink. PMID:26797811

  7. Photocatalytically Active Oligomeric Graphitic Carbon Nitride: Conformational Flexibility, Electronic Levels, Carrier Localization

    Science.gov (United States)

    Blum, Volker; Lau, Vincent; Botari, Tiago; Huhn, William; Lotsch, Bettina V.

    2015-03-01

    Polymers consisting of bridged heptazine units (often called ``graphitic carbon nitride'' or ``g-C3N4'') show considerable promise as photocatalysts for solar hydrogen evolution. Recent experimental evidence suggests that oligomeric rather than fully polymerized ``g-C3N4'' exhibits increased intrinsic photocatalytic activity. Using density-functional theory (DFT; van der Waals corrected PBE functional for conformers, hybrid DFT and GW for electronic levels), we show that considerable conformational flexibility exists for the heptazine trimers and tetramers. Analysis of HOMO and LUMO locations as well as trends in photocatalytic activity among heptazine oligomers and polymers reveals the NH2 groups of the oligomers as potential charge-transfer sites. We show that conformational variations of the oligomers can lead to significant, electrostatically motivated carrier localization effects. We suggest that NH2 side groups and the intrinsic conformational variations of the oligomeric species lead to the observed enhanced catalytic activity.

  8. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Directory of Open Access Journals (Sweden)

    Ram Sevak Singh

    2015-11-01

    Full Text Available Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0, armchair (3, 3, and chiral (4, 2 structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  9. Ultra fine carbon nitride nanocrystals synthesized by laser ablation in liquid solution

    International Nuclear Information System (INIS)

    Crystalline carbon nitride nanopowders and nanorods have been successfully synthesized at room temperature and pressure using the novel technique of pulsed laser ablation of a graphite target in liquid ammonia solution. High-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and Fourier transform infrared spectroscopy (FTIR) were used to systematically study the morphology, nanostructure and chemical bonding. The experimental composition and structure of the nanoparticles are consistent with the theoretical calculations for α-C3N4. After 2 h ablation the particles had a size distribution ∼8-12 nm, whereas after 5 h ablation the particles had grown into nanorod-like structures with a crystalline C3N4 tip. A formation mechanism for these nanorods is proposed whereby nanoparticles are first synthesized via rapid formation of an embryonic particle, followed by a slow growth, eventually leading to a one-dimensional nanorod structure

  10. Boron Nitride Coated Carbon Nanotube Arrays with Enhanced Compressive Mechanical Property

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Tan, Dunlin; Zhang, Bowei; Tok, Alfred Iing Yoong; Teo, Edwin Hang Tong

    Vertically aligned carbon nanotube (CNT) array is one of the most promising energy dissipating materials due to its excellent temperature invariant mechanical property. However, the CNT arrays with desirable recoverability after compression is still a challenge. Here, we report on the mechanical enhancement of the CNT arrays reinforced by coating with boron nitride (BN) layers. These BN coated CNT (BN/CNT) arrays exhibit excellent compressive strength and recoverability as compared to those of the as-prepared CNT arrays which totally collapsed after compression. In addition, the BN coating also provides better resistance to oxidation due to its intrinsic thermal stability. This work presented here opens a new pathway towards tuning mechanical behavior of any arbitrary CNT arrays for promising potential such as damper, vibration isolator and shock absorber applications.

  11. Harvesting solar light with crystalline carbon nitrides for efficient photocatalytic hydrogen evolution

    KAUST Repository

    Bhunia, Manas Kumar

    2014-08-14

    Described herein is the photocatalytic hydrogen evolution using crystalline carbon nitrides (CNs) obtained by supramolecular aggregation followed by ionic melt polycondensation (IMP) using melamine and 2,4,6-triaminopyrimidine as a dopant. The solid state NMR spectrum of 15N-enriched CN confirms the triazine as a building unit. Controlling the amount and arrangements of dopants in the CN structure can dramatically enhance the photocatalytic performance for H2 evolution. The polytriazine imide (PTI) exhibits the apparent quantum efficiency (AQE) of 15% at 400 nm. This method successfully enables a substantial amount of visible light to be harvested for H2 evolution, and provides a promising route for the rational design of a variety of highly active crystalline CN photocatalysts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Superconductive niobium films coating carbon nanotube fibers

    Science.gov (United States)

    Salvato, M.; Lucci, M.; Ottaviani, I.; Cirillo, M.; Behabtu, N.; Young, C. C.; Pasquali, M.; Vecchione, A.; Fittipaldi, R.; Corato, V.

    2014-11-01

    Superconducting niobium (Nb) has been successfully obtained by sputter deposition on carbon nanotube fibers. The transport properties of the niobium coating the fibers are compared to those of niobium thin films deposited on oxidized Si substrates during the same deposition run. For niobium films with thicknesses above 300 nm, the niobium coating the fibers and the thin films show similar normal state and superconducting properties with critical current density, measured at T = 4.2 K, of the order of 105 A cm-2. Thinner niobium layers coating the fibers also show the onset of the superconducting transition in the resistivity versus temperature dependence, but zero resistance is not observed down to T = 1 K. We evidence by scanning electron microscopy (SEM) and current-voltage measurements that the granular structure of the samples is the main reason for the lack of true global superconductivity for thicknesses below 300 nm.

  13. Superconductive niobium films coating carbon nanotube fibers

    International Nuclear Information System (INIS)

    Superconducting niobium (Nb) has been successfully obtained by sputter deposition on carbon nanotube fibers. The transport properties of the niobium coating the fibers are compared to those of niobium thin films deposited on oxidized Si substrates during the same deposition run. For niobium films with thicknesses above 300 nm, the niobium coating the fibers and the thin films show similar normal state and superconducting properties with critical current density, measured at T = 4.2 K, of the order of 105 A cm−2. Thinner niobium layers coating the fibers also show the onset of the superconducting transition in the resistivity versus temperature dependence, but zero resistance is not observed down to T = 1 K. We evidence by scanning electron microscopy (SEM) and current-voltage measurements that the granular structure of the samples is the main reason for the lack of true global superconductivity for thicknesses below 300 nm. (paper)

  14. Preparation of diamond-like carbon and boron nitirde films by high-intensity pulsed ion beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rej, D.J.; Davis, H.A. [Los Alamos National Lab., NM (United States); Remnev, G.E. [Tomsk Polytechnic Univ., Tomsk (Russian Federation). Nuclear Physics Institute.] [and others

    1995-05-01

    Intense ion beams (300-keV C{sup +}, O{sup +}, and H{sup +}, 20--30 kA, 50 to 400-ns pulsewidth, up to 0.3-Hz repetition rate) were used to prepare diamond-like carbon (DLC) and boron nitride (BN) films. Deposition rates of up to 25{plus_minus}5 nm/pulse were obtained with instantaneous rates exceeding 1 mm/s. Most films were uniform, light brown, translucent, and nonporous with some micron-size particulates. Raman and parallel electron energy loss spectroscopy indicated the presence of DLC. The films possessed favorable electron field-emission characteristics desirable for cold-cathode displays. Transmission electron microscopy (TEM) and transmission electron diffraction (TED) revealed that the C films contained diamond crystals with 25 to 125-nm grain size. BN films were composed of hexagonal, cubic and wurtzite phases.

  15. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    Science.gov (United States)

    Schubert, M.; Rheinländer, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; Woollam, J. A.; Hahn, J.; Richter, F.

    1997-11-01

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material.

  16. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    International Nuclear Information System (INIS)

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. copyright 1997 The American Physical Society

  17. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  18. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Muratore, Christopher [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton, Dayton, Ohio 45409 (United States); Jespersen, Michael L.; Hu, Jianjun [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton Research Institute, Dayton, Ohio 45409 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Voevodin, Andrey A., E-mail: nicholas.glavin.1@us.af.mil, E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  19. Effect of substrate bias on the micro- structure and properties of nanocom- posite titanium nitride – based films

    Directory of Open Access Journals (Sweden)

    M. Dudek

    2009-12-01

    Full Text Available Purpose: Hard nanocomposite nc-TiN/a-SiN films exhibit very attractive mechanical, tribological, optical and electronic properties related to their microstructure and chemical bonding.Design/methodology/approach: In the present work, we investigate ternary thin film TiSiN systems deposited by plasma assisted reactive pulsed magnetron sputtering (PARPMS from titanium and silicon targets. PARPMS allows one to effectively control ion bombardment by reactive species (e.g., N2 +, N+ on the surface of the growing film by varying the bias voltage (VB induced by a radiofrequency (RF power applied to the substrate.Findings: RF biasing without additional heating of the substrate promotes formation of crystals within the nc films. Specifically, (111 crystal orientation at low VB (- 50 V changed into (200 when VB was increased above - 600 V. At the same time, hardness (H and reduced Young’s modulus (Er of the films changed fromH ~ 10 GPa and Er ~ 135 GPa to their maximum values of H ~ 25 GPa and Er ~ 248 GPa at VB = - 600 V. For comparison, for films deposited at 300ºC and VB = - 200 V, the maximum values of H and Er of ~ 35 GPa and ~ 350 GPa were observed.Practical implications: The use of the PARPMS to effectively control the mechanical properties and microstructure of transition metal nitride systems films.Originality/value: Discussion of evolution of the film microstructure (crystal size and orientation at constant film composition and relate it with the energetic aspects of the film growth and film characteristics.

  20. Synthesis of carbon nitride powder by selective etching of TiC0.3N0.7 in chlorine-containing atmosphere at moderate temperature

    International Nuclear Information System (INIS)

    We reported the synthesis of carbon nitride powder by extracting titanium from single inorganic precursor TiC0.3N0.7 in chlorine-containing atmosphere at ambient pressure and temperature not exceeding 500 deg. C. The TiC0.3N0.7 crystalline structure acted as a template, supplying active carbon and nitrogen atoms for carbon nitride when it was destroyed in chlorination. X-ray diffraction data showed that the obtained carbon nitride powders were amorphous, which was in good agreement with transmission electron microscope analysis. The composition and structure of carbon nitride powders were analyzed by employing Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Results indicated that disorder structure was most likely for the carbon nitride powders and the N content depended greatly on the chlorination temperature. Thermal analysis in flowing N2 indicated that the mass loss started from 300 deg. C and the complete decomposition occurred at around 650 deg. C, confirming the low thermal stability of the carbon nitride material.

  1. Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing

    Science.gov (United States)

    Valco, G. J.; Kapoor, V. J.

    1985-01-01

    The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min.

  2. Nano-solenoid: helicoid carbon-boron nitride hetero-nanotube

    Science.gov (United States)

    Zhang, Zi-Yue; Miao, Chunyang; Guo, Wanlin

    2013-11-01

    As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano-solenoid can generate a uniform and tremendous magnetic field of more than 1 tesla, closing to that generated by the main magnet of medical nuclear magnetic resonance. Moreover, the magnitude of magnetic field can be easily modulated by bias voltage, providing great promise for a nano-inductor to realize electromagnetic conversion at the nanoscale.As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano

  3. Laser annealing of amorphous carbon films

    International Nuclear Information System (INIS)

    Amorphous (a-C) Carbon thin films were deposited, using pulsed laser deposition (PLD) with a Nd:YAG laser (1064 nm, 7 ns), from a pyrolytic graphite target, on silicon and refractory metal (Mo) substrates to a film thickness of 55, 400 and 500 nm. Samples were grown at RT and then annealed by a laser annealing technique, to reduce residual stress and induce a locally confined 'graphitization' process. The films were exposed to irradiation, in vacuum, by a Nd:YAG pulsed laser, operating at different wavelengths (VIS, N-UV) and increasing values of energy from 6-100 mJ/pulse. The thinner films were completely destroyed by N-UV laser treatment also at lower energies, owing to the almost direct propagation of heat to the Si substrate with melting and ruinous blistering effects. For thicker films the Raman micro-analysis evidenced the influence of laser treatments on the sp3/sp2 content evolution, and established the formation of aromatic nano-structures of average dimension 4.1-4.7 nm (derived from the ID/IG peak ratio), at fluence values round 50 mJ/cm2 for N-UV and 165 mJ/cm2 for VIS laser irradiation. Higher fluences were not suitable for a-Carbon 'graphitization', since a strong ablation process was the prominent effect of irradiation. Grazing incidence XRD (GI-XRD) used to evaluate the dimension and texturing of nano-particles confirmed the findings of Raman analysis. The effects of irradiation on surface morphology were studied by SEM analysis

  4. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation.

    Science.gov (United States)

    Roosta, Sara; Hashemianzadeh, Seyed Majid; Ketabi, Sepideh

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were -4.128kcalmol(-1) and -2457.124kcalmol(-1) respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was -281.937kcalmol(-1) which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (-374.082 and -245.766kcalmol(-1)) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. PMID:27287103

  5. Source Molecular Effect on Amorphous Carbon Film Deposition

    OpenAIRE

    Kawazoe, Hiroki; Inayoshi, Takanori; Shinohara, Masanori; Matsuda, Yoshinobu; Fujiyama, Hiroshi; Nitta, Yuki; Nakatani, Tatsuyuki

    2009-01-01

    We investigated deposition process of amorphous carbon films using acetylene and methane as a source molecule, by using infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). We found that deposited film structures were different due to source molecules.

  6. Detection of Carbon Monoxide Using Polymer-Carbon Composite Films

    Science.gov (United States)

    Homer, Margie L.; Ryan, Margaret A.; Lara, Liana M.

    2011-01-01

    A carbon monoxide (CO) sensor was developed that can be incorporated into an existing sensing array architecture. The CO sensor is a low-power chemiresistor that operates at room temperature, and the sensor fabrication techniques are compatible with ceramic substrates. Sensors made from four different polymers were tested: poly (4-vinylpryridine), ethylene-propylene-diene-terpolymer, polyepichlorohydrin, and polyethylene oxide (PEO). The carbon black used for the composite films was Black Pearls 2000, a furnace black made by the Cabot Corporation. Polymers and carbon black were used as received. In fact, only two of these sensors showed a good response to CO. The poly (4-vinylpryridine) sensor is noisy, but it does respond to the CO above 200 ppm. The polyepichlorohydrin sensor is less noisy and shows good response down to 100 ppm.

  7. Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

    International Nuclear Information System (INIS)

    We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenated silicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH4, NH3 and H2 gases at total flow rates below 33 sccm. Time of flight secondary ion mass spectroscopy reveal that the film surfaces consist of predominantly Si with hydrogenated SixNyOz species. Energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy corroborate on the N/Si ratio. Electron energy loss spectroscopy discloses that the thickness of the nitrogen rich oxidized interface between the SiNx films and the c-Si substrate decrease with an enhancing NH3 flow rate. By varying the NH3 flow rate, dense SiNx films can be realized with hydrogen content between 16 and 9 at.%, a refractive index between 3.5 and 1.9 and optical band gap ranging from 2 to 4.5 eV. The SiNx film stress is compressive for N/Si 0.55. Mechanisms relating the HWCVD conditions and the film structure and properties are proposed.

  8. A statistical mechanics model of carbon nanotube macro-films

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Carbon nanotube macro-films are two-dimensional films with micrometer thickness and centimeter by centimeter in-plane dimension.These carbon nanotube macroscopic assemblies have attracted significant attention from the material and mechanics communities recently because they can be easily handled and tailored to meet specific engineering needs.This paper reports the experimental methods on the preparation and characterization of single-walled carbon nanotube macro-films,and a statistical mechanics model on ...

  9. Coaxial carbon@boron nitride nanotube arrays with enhanced thermal stability and compressive mechanical properties.

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Huang, Jingfeng; Tan, Dunlin; Zhang, Bowei; Teo, Edwin Hang Tong; Tok, Alfred Iing Yoong

    2016-06-01

    Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability. CNT arrays are grown using a commercially available thermal chemical vapor deposition (TCVD) technique and an outer BNNT with a wall thickness up to 1.37 nm is introduced by a post-growth TCVD treatment. Importantly, compared to the as-grown CNT arrays which deform almost plastically upon compression, the coaxial C@BNNT arrays exhibit an impressive ∼4-fold increase in compressive strength with nearly full recovery after the first compression cycle at a 50% strain (76% recovery maintained after 10 cycles), as well as a significantly high and persistent energy dissipation ratio (∼60% at a 50% strain after 100 cycles), attributed to the synergistic effect between the CNT and outer BNNT. Additionally, the as-prepared C@BNNT arrays show an improved structural stability in air at elevated temperatures, attributing to the outstanding thermal stability of the outer BNNT. This work provides new insights into tailoring the mechanical and thermal behaviours of arbitrary CNT arrays which enables a broader range of applications. PMID:27227818

  10. Metal-functionalized single-walled graphitic carbon nitride nanotubes: a first-principles study on magnetic property

    Directory of Open Access Journals (Sweden)

    Shenoy Vivek

    2011-01-01

    Full Text Available Abstract The magnetic properties of metal-functionalized graphitic carbon nitride nanotubes were investigated based on first-principles calculations. The graphitic carbon nitride nanotube can be either ferromagnetic or antiferromagnetic by functionalizing with different metal atoms. The W- and Ti-functionalized nanotubes are ferromagnetic, which are attributed to carrier-mediated interactions because of the coupling between the spin-polarized d and p electrons and the formation of the impurity bands close to the band edges. However, Cr-, Mn-, Co-, and Ni-functionalized nanotubes are antiferromagnetic because of the anti-alignment of the magnetic moments between neighboring metal atoms. The functionalized nanotubes may be used in spintronics and hydrogen storage.

  11. Molybdenum nitride nanotubes

    International Nuclear Information System (INIS)

    Molybdenum nitride nanotubes were prepared by depositing nitride film on anodized aluminum oxide (AAO) template by atomic layer deposition and then etching away the template with sodium hydroxide solution. The effect of deposition parameters on film growth and the properties of the nanotubes was investigated. The maximum depth of intrusion of the molybdenum nitride film into the AAO pores was found to be 20 μm, achieved with 7-second precursor pulses. Precursor diffusion into the AAO pores dominated over the intrusion. Three different architectures of molybdenum nitride nanotubes were isolated. Separated nanotubes were found when the template was etched in an ultrasonic bath, while bundling dominated when template etching was conducted without ultrasound. When the nitride-coated AAO template was mounted onto a steel plate before etching the nanotubes remained on the surface with the tips strongly intertwined

  12. ENHANCING ADHESION OF TETRAHEDRAL AMORPHOUS CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuqing; Lin Yi; Wang Xiaoyan; Wang Yanwu; Wei Xinyu

    2005-01-01

    Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.

  13. The thermal conductivity of embedded nano-aluminum nitride-doped multi-walled carbon nanotubes in epoxy composites containing micro-aluminum nitride particles

    International Nuclear Information System (INIS)

    Amino-functionalized nano-aluminum nitride (nano-AlN) particles were doped onto the surfaces of chlorinated multi-walled carbon nanotubes (MWCNTs) to act as fillers in thermally conducting composites. These synthesized materials were embedded in epoxy resin. Then, the untreated micro-aluminum nitride (micro-AlN) particles were added to this resin, whereby the composites filled with nano-AlN-doped MWCNTs (0, 0.5, 1, 1.5, 2 wt%) and micro-AlN (25.2, 44.1, 57.4 vol%) were fabricated. As a result, the thermal diffusivity and conductivity of all composites continuously improved with increasing nano-AlN-doped MWCNT content and micro-AlN filler loading. The thermal conductivity reached its maximum, which was 31.27 times that of the epoxy alone, when 2 wt% nano-AlN-doped MWCNTs and 57.4 vol% micro-AlN were added to the epoxy resin. This result is due to the high aspect ratio of the MWCNTs and the surface polarity of the doped nano-AlN and micro-AlN particles, resulting in the improved thermal properties of the epoxy composite. (paper)

  14. The thermal conductivity of embedded nano-aluminum nitride-doped multi-walled carbon nanotubes in epoxy composites containing micro-aluminum nitride particles

    Science.gov (United States)

    Choi, Seran; Im, Hyungu; Kim, Jooheon

    2012-02-01

    Amino-functionalized nano-aluminum nitride (nano-AlN) particles were doped onto the surfaces of chlorinated multi-walled carbon nanotubes (MWCNTs) to act as fillers in thermally conducting composites. These synthesized materials were embedded in epoxy resin. Then, the untreated micro-aluminum nitride (micro-AlN) particles were added to this resin, whereby the composites filled with nano-AlN-doped MWCNTs (0, 0.5, 1, 1.5, 2 wt%) and micro-AlN (25.2, 44.1, 57.4 vol%) were fabricated. As a result, the thermal diffusivity and conductivity of all composites continuously improved with increasing nano-AlN-doped MWCNT content and micro-AlN filler loading. The thermal conductivity reached its maximum, which was 31.27 times that of the epoxy alone, when 2 wt% nano-AlN-doped MWCNTs and 57.4 vol% micro-AlN were added to the epoxy resin. This result is due to the high aspect ratio of the MWCNTs and the surface polarity of the doped nano-AlN and micro-AlN particles, resulting in the improved thermal properties of the epoxy composite.

  15. Niobium nitride films formed by rapid thermal processing (RTP): a study of depth profiles and interface reactions by complementary analytical techniques.

    Science.gov (United States)

    Berendes, A; Brunkahl, O; Angelkort, C; Bock, W; Hofer, F; Warbichler, P; Kolbesen, B O

    2004-06-01

    The nitridation of niobium films approximately 250 and 650 nm thick by rapid thermal processing (RTP) at 800 degrees C in molecular nitrogen or ammonia was investigated. The niobium films were deposited by electron beam evaporation on silicon substrates covered by a 100 or 300 nm thick thermally grown SiO(2) layer. In these investigations the reactivity of ammonia and molecular nitrogen was compared with regard to nitride formation and reaction with the SiO(2) substrate layer. The phases formed were characterized by X-ray diffraction (XRD). Depth profiles of the elements in the films were recorded by use of secondary neutral mass spectrometry (SNMS). Microstructure and spatial distribution of the elements were imaged by transmission electron microscopy (TEM) and energy-filtered TEM (EFTEM). Electron energy loss spectra (EELS) were taken at selected positions to discriminate between different nitride, oxynitride, and oxide phases. The results provide clear evidence of the expected higher reactivity of ammonia in nitride formation and reaction with the SiO(2) substrate layer. Outdiffusion of oxygen into the niobium film and indiffusion of nitrogen from the surface of the film result in the formation of oxynitride in a zone adjacent to the Nb/SiO(2) interface. SNMS profiles of nitrogen reveal a distinct tail which is attributed to enhanced diffusion of nitrogen along grain boundaries. PMID:15098081

  16. Unique Static Magnetic and Dynamic Electromagnetic Behaviors in Titanium Nitride/Carbon Composites Driven by Defect Engineering

    OpenAIRE

    Chunhong Gong; Hongjie Meng; Xiaowei Zhao; Xuefeng Zhang; Laigui Yu; Jingwei Zhang; Zhijun Zhang

    2016-01-01

    Recently, the defect-induced static magnetic behaviours of nanomaterials have been a cutting-edge issue in diluted magnetic semiconductor materials. However, the dynamic magnetic properties of nanomaterials are commonly ignored if their bulk counterparts are non-magnetic. In the present research, titanium nitride-carbon (TiN/C) nanocomposites were found to exhibit both static and dynamic magnetic properties that vary in the opposite trend. Moreover, novel unconventional electromagnetic resona...

  17. Polymeric Graphitic Carbon Nitride Doped with CuO Dispersed on Dealuminated Clinoptilolite (CuO/HCP): Synthesis and Characterisation

    OpenAIRE

    Saheed Olalekan Sanni; Omoruyi Gold Idemudia

    2015-01-01

    CuO dispersed on dealuminated clinoptilolite (CuO/HCP) and further doped with polymeric graphitic carbon nitride (CuO/HCP-g-C3N4) was synthesized through 2 facile routes: precipitation method for CuO/HCP and impregnation through ultrasonication method for the hybrid composite material. The hybrid composite material crystalline phase, surface morphology, and structural and thermal properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-r...

  18. The stability of DLC film on nitrided CoCrMo alloy in phosphate buffer solution

    International Nuclear Information System (INIS)

    CoCrMo alloy is often used as the material for metal artificial joint, but metal debris and metal ions are the main concern on tissue inflammation or tissue proliferation for metal prosthesis. In this paper, nitrogen ion implantation and diamond like carbon (DLC) film composite treatment was used to reduce the wear and ion release of biomedical CoCrMo substrate. The mechanical properties and stability of N-implanted/DLC composite layer in phosphate buffer solution (PBS) was evaluated to explore the full potential of N-implanted/DLC composite layer as an artificial joint surface modification material. The results showed that the DLC film on N implanted CoCrMo (N-implanted/DLC composite layer) had the higher surface hardness and wear resistance than the DLC film on virgin CoCrMo alloy, which was resulted from the strengthen effect of the N implanted layer on CoCrMo alloy. After 30 days immersion in PBS, the structure of DLC film on virgin CoCrMo or on N implanted CoCrMo had no visible change. But the adhesion and corrosion resistance of DLC on N implanted CoCrMo (N-implanted/DLC composite layer) was weakened due to the dissolution of the N implanted layer after 30 days immersion in PBS. The adhesion reduction of N-implanted/DLC composite layer was adverse for in vivo application in long term. So researcher should be cautious to use N implanted layer as an inter-layer for increasing CoCrMo alloy load carrying capacity in vivo environment.

  19. The stability of DLC film on nitrided CoCrMo alloy in phosphate buffer solution

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, T.F.; Liu, B.; Wu, B.J.; Liu, J.; Sun, H.; Leng, Y.X., E-mail: yxleng@263.net; Huang, N.

    2014-07-01

    CoCrMo alloy is often used as the material for metal artificial joint, but metal debris and metal ions are the main concern on tissue inflammation or tissue proliferation for metal prosthesis. In this paper, nitrogen ion implantation and diamond like carbon (DLC) film composite treatment was used to reduce the wear and ion release of biomedical CoCrMo substrate. The mechanical properties and stability of N-implanted/DLC composite layer in phosphate buffer solution (PBS) was evaluated to explore the full potential of N-implanted/DLC composite layer as an artificial joint surface modification material. The results showed that the DLC film on N implanted CoCrMo (N-implanted/DLC composite layer) had the higher surface hardness and wear resistance than the DLC film on virgin CoCrMo alloy, which was resulted from the strengthen effect of the N implanted layer on CoCrMo alloy. After 30 days immersion in PBS, the structure of DLC film on virgin CoCrMo or on N implanted CoCrMo had no visible change. But the adhesion and corrosion resistance of DLC on N implanted CoCrMo (N-implanted/DLC composite layer) was weakened due to the dissolution of the N implanted layer after 30 days immersion in PBS. The adhesion reduction of N-implanted/DLC composite layer was adverse for in vivo application in long term. So researcher should be cautious to use N implanted layer as an inter-layer for increasing CoCrMo alloy load carrying capacity in vivo environment.

  20. Iron-Doped Carbon Nitride-Type Polymers as Homogeneous Organocatalysts for Visible Light-Driven Hydrogen Evolution.

    Science.gov (United States)

    Gao, Lin-Feng; Wen, Ting; Xu, Jing-Yin; Zhai, Xin-Ping; Zhao, Min; Hu, Guo-Wen; Chen, Peng; Wang, Qiang; Zhang, Hao-Li

    2016-01-13

    Graphitic carbon nitrides have appeared as a new type of photocatalyst for water splitting, but their broader and more practical applications are oftentimes hindered by the insolubility or difficult dispersion of the material in solvents. We herein prepared novel two-dimensional (2D) carbon nitride-type polymers doped by iron under a mild one-pot method through preorganizing formamide and citric acid precursors into supramolecular structures, which eventually polycondensed into a homogeneous organocatalyst for highly efficient visible light-driven hydrogen evolution with a rate of ∼16.2 mmol g(-1) h(-1) and a quantum efficiency of 0.8%. Laser photolysis and electrochemical impedance spectroscopic measurements suggested that iron-doping enabled strong electron coupling between the metal and the carbon nitride and formed unique electronic structures favoring electron mobilization along the 2D nanomaterial plane, which might facilitate the electron transfer process in the photocatalytic system and lead to efficient H2 evolution. In combination with electrochemical measurements, the electron transfer dynamics during water reduction were depicted, and the earth-abundant Fe-based catalyst may open a sustainable strategy for conversion of sunlight into hydrogen energy and cope with current challenging energy issues worldwide. PMID:26650485

  1. Formation of Silicon/Carbon Core-Shell Nanowires Using Carbon Nitride Nanorods Template and Gold Catalyst

    Directory of Open Access Journals (Sweden)

    Ilyani Putri Jamal

    2013-01-01

    Full Text Available In this experiment, silicon/carbon (Si/C core-shell nanowires (NWs were synthesized using gold nanoparticles (Au NPs coated carbon nitride nanorods (CN NRs as a template. To begin with, the Au NPs coated CN NRs were prepared by using plasma-enhanced chemical vapor deposition assisted with hot-wire evaporation technique. Fourier transform infrared spectrum confirms the C–N bonding of the CN NRs, while X-ray diffraction pattern indicates the crystalline structure of the Au NPs and amorphous structure of the CN NRs. The Au NPs coated CN NRs were thermally annealed at temperature of 800°C in nitrogen ambient for one hour to induce the growth of Si/C core-shell NWs. The growth mechanism for the Si/C core-shell NWs is related to the nitrogen evolution and solid-liquid-solid growth process which is a result of the thermal annealing. The formation of Si/C core-shell NWs is confirmed by electron spectroscopic imaging analysis.

  2. Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

    Science.gov (United States)

    Choudhuri, Indrani; Kumar, Sourabh; Mahata, Arup; Rawat, Kuber Singh; Pathak, Biswarup

    2016-07-01

    High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices.High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices. Electronic supplementary information (ESI

  3. CVD growth and field emission properties of nanostructured carbon films

    International Nuclear Information System (INIS)

    An investigation of the growth mechanisms, electronical and structural properties, and field emissions of carbon films obtained by chemical vapour deposition showed that field emissions from films composed of spatially oriented carbon nanotubes and plate-like graphite nanocrystals exhibit non-metallic behaviour. The experimental evidence of work function local reduction for carbon film materials is reported here. A model of the emission site is proposed and the mechanism of field emission from nanostructured carbon materials is described. In agreement with the model proposed here, the electron emission in different carbon materials results from sp3-like defects in an sp2 network of their graphite-like component. (author)

  4. Synthesis and high temperature XRD studies of tantalum nitride thin films prepared by reactive pulsed dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Elangovan, T. [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641 046 (India); Murugeshan, S. [Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.com [Department of Nanoscience and Technology, Bharathiar University, Coimbatore-641 046 (India); Kuppusami, P.; Khan, Shabhana; Sudha, C. [Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Ganesan, V. [UGC-DAE CSR, Indore-452 017 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Division, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India)

    2011-06-02

    In the present work, the growth characteristics of tantalum nitride (TaN) thin films prepared on (1 0 0) Si substrates by reactive pulsed DC magnetron sputtering are investigated. XRD analyses indicated the presence of {alpha}-Ta and {beta}-Ta in the films deposited in pure argon atmosphere, while {beta}-TaN and fcc-TaN phases appeared for 2 sccm of nitrogen, and cubic TaN for 5-25 sccm of nitrogen in the sputtering gas mixture of argon and nitrogen at a substrate temperature of 773 K. The TaN films obtained with increasing substrate temperature and pulse width showed a change in the texture from [1 1 1] to [2 0 0] orientation. Atomic force microscopy (AFM) results indicated that the average surface roughness was low for films deposited in pure argon than for the films deposited in a mixed Ar + N{sub 2} atmosphere. Nanocrystalline phase of the deposited material was identified from the high-resolution transmission electron microscopy (HRTEM) images. X-ray photoelectron spectroscopy (XPS) core level spectra confirmed the formation of TaN phase. The high temperature X-ray diffraction analysis of the optimized TaN thin film was performed in the temperature range 298-1473 K. The lattice parameter of the TaN films was found to increase from 4.383 to 4.393 A on increasing the temperature from 298 to 823 K and it reduced to 4.345 A at 1473 K. The thermal expansion coefficient value was found to be negative for the TaN films.

  5. Microstructure and mechanical properties of multiphase layer formed during depositing Ti film followed by plasma nitriding on 2024 aluminum alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F.Y., E-mail: zfy19861010@163.com; Yan, M.F., E-mail: yanmufu@hit.edu.cn

    2014-05-01

    Highlights: • A novel duplex surface treatment on 2024 Al alloy was proposed. • A multiphase layer composed of TiN{sub 0.3}, Al{sub 3}Ti and Al{sub 18}Ti{sub 2}Mg{sub 3} was prepared on the surface of 2024 Al alloy. • The microstructures of TiN{sub 0.3}, Al{sub 3}Ti and Al{sub 18}Ti{sub 2}Mg{sub 3} were characterized by SEM and TEM. • The surface hardness of the multiphase layer reached to 590 HV{sub 0.01}, five times harder than 2024 Al alloy. • The wear resistance of 2024 Al alloy was improved significantly. - Abstract: In this study, a novel method was develop to fabricate an in situ multiphase layer on 2024 Al alloy to improve its surface mechanical properties. The method was divided into two steps, namely depositing pure Ti film on 2024 Al substrate by using magnetron sputtering, and plasma nitriding of Ti coated 2024 Al in a gas mixture comprising of 40% N{sub 2}–60% H{sub 2}. The microstructure and mechanical properties of the multiphase layer prepared at different nitriding time were investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), microhardness tester and pin-on-disc tribometer. Results showed that multiphase layer with three sub-layers (i.e. the outmost TiN{sub 0.3} layer, the intermediate Al{sub 3}Ti layer and the inside Al{sub 18}Ti{sub 2}Mg{sub 3} layer) can be obtained. The thickness of the Al{sub 18}Ti{sub 2}Mg{sub 3} layer increased faster than TiN{sub 0.3} and Al{sub 3}Ti layer with increasing nitriding time. The hardness of the layer has reached about 593 HV, which is much higher than that of 2024 Al substrate. The wear rate of the coated samples decreased 53% for 4 h nitriding and 86% for 12 h nitriding, respectively, compared with that of the uncoated one. The analysis of worn surface indicated that the coated 2024 Al exhibited predominant abrasive wear, whereas the uncoated one showed severe adhesive wear.

  6. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 107 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si3N4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si3N4 are compared to results on similar devices with SiO2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  7. Properties of nitrogen containing diamond-like carbon films

    International Nuclear Information System (INIS)

    Optical and mechanical properties of nitrogen containing diamond- like carbon (NC-DLC) films deposited by RF plasma decomposition of CH4:H2:N2 gas mixture were investigated. Nitrogen was incorporated into DLC films both during film growth and after deposition of film by implantation of nitrogen ions. It was shown that both optical and mechanical properties of the films strongly depend on nitrogen content in the films. In some cases the mechanical properties of nitrogen implanted films were improved in comparison with unimplanted samples. (author). 7 refs., 2 figs

  8. Graphitic carbon nitride nanosheet-based multicolour fluorescent nanoprobe for multiplexed analysis of DNA

    International Nuclear Information System (INIS)

    We demonstrate that nanosheets composed of graphitic carbon nitride (g-C3N4) can serve as a low-cost and efficient fluorescent nanoprobe for the multiplexed detection of DNA in solution. The strategy is based on the finding that g-C3N4 is capable of binding dye-labeled single-stranded DNA (ssDNA) which results in quenching of the fluorescence of the dye. If target DNA hybridizes with dye-labeled ssDNA, the interaction between dye-labeled ssDNA and g-C3N4 is weakened, and this results in desorption of the dsDNA from the surface of the g-C3N4 and in recovery of fluorescence. The large surface area of g-C3N4 nanosheets allows for simultaneous quenching of multicolor DNA probes labeled with different dyes, leading to the development of multiplexed DNA sensors for the detection of multiple DNA targets in a single solution. By using one 15-mer DNA fragment and one 18-mer DNA fragment as proof-of-principle analytes, the method displayed good analytical performance. The limits of detection are 75 and 62 pM, respectively. The method is simple and sensitive, and was used to detect DNA in serum samples. We perceive that this method represents a new approach towards multiplexed assays for applications in DNA monitoring, clinical diagnosis, and in the detection of genetic disorders. (author)

  9. Graphene-like carbon nitride layers: stability, porosity, band gaps, and magnetic ground states

    Science.gov (United States)

    Chacham, Helio; da Silva-Araujo, Joice; Brito, Walber

    In the present work, we investigate the relative stability and electronic properties of carbon nitride (CxNy) graphene-like structures using a combination of a new bond-counting method and density-functional-theory (DFT) first-principles calculations. We obtain analytical and numerical results for the energetics and the morphology of graphene-like CxNy For instance, at high N concentrations, the bond-counting method allows us to search among millions of possible structures, and we find several ones with ab initio formation energies per N atom comparable to, or even smaller than, that of the isolated graphitic N impurity. Those structures are characterized by a variety of nanoporous graphene morphologies. The low-energy C-N structures also present a variety of band gaps, from zero to 1.6 eV, which can be tuned by stoichiometry and porosity. Several structures also present ferro- and antiferromagnetic ground states. We thank support from CNPq, CAPES, and FAPEMIG.

  10. Time-Resolved Study on Xanthene Dye-Sensitized Carbon Nitride Photocatalytic Systems.

    Science.gov (United States)

    Zhang, Huiyu; Li, Shuang; Lu, Rong; Yu, Anchi

    2015-10-01

    Dye sensitization is a promising strategy to extend the visible light absorption of carbon nitride (C3N4) and increase the photocatalytic hydrogen evolution efficiency of C3N4 under visible light irradiation. However, the interaction dynamics between C3N4 and a sensitized dye has not been reported in the literature. Herein, we selected four commonly used xanthene dyes such as fluorescein, dibromofluorescein, eosin Y, and erythrosine B and prepared their corresponding dye-sensitized-C3N4 composites. For the first time, we derived the electron transfer rate from the LUMO of each photoexcited xanthene dye to the conduction band of C3N4 using picoesecond time-resolved fluorescence measurements. We also obtained the reduction potentials of all selected xanthene dyes and C3N4 with cyclic voltammetry measurements. The cyclic voltammetry measurements gave a consistent result with the picosecond time-resolved fluorescence measurements. Besides, the possibility of the selected xanthene dye as an acceptor for the hole of the photoexcited C3N4 was also discussed. We believe this study is significant for the researcher to understanding the fundamental aspects in the xanthene dye-sensitized-C3N4 photocatalytic systems. PMID:26389679

  11. Carbon nitride nanotube as a sensor for alkali and alkaline earth cations

    International Nuclear Information System (INIS)

    Highlights: ► Adsorption of alkali and alkaline earth cations on a CN nanotube studied by DFT. ► The alkaline cation adsorption may raise potential barrier of the electron emission. ► The tube may act as a sensor in the presence of alkali and alkaline cations. - Abstract: Adsorption of several alkali (Li+, Na+, and K+) and alkaline earth (Be2+, Mg2+, and Ca2+) cations on the surface of a zigzag (9, 0) carbon nitride nanotube has been investigated using density functional theory. It has been found that almost all of the cations prefer to be strongly chemisorbed at the center of porous site of the tube surface. The adsorption of alkaline cations much more influences the electronic properties of the tube, in comparison with the alkali ones, so that it is transformed from an intrinsic semiconductor with HOMO/LUMO energy gap of 4.02 eV to extrinsic p-type one with the gap of 0.54–1.94 eV. The alkaline cation adsorption may significantly raise potential barrier of the electron emission from the tube surface, hence impeding the field emission. It has been also concluded that the electrical sensitivity of the tube toward the cations may be in the order: Be2+ ≫ Mg2+ ≫ Ca2+ ≫ Li+ ∼ Na+ ∼ K+.

  12. Theoretical investigation of methane adsorption onto boron nitride and carbon nanotubes

    Directory of Open Access Journals (Sweden)

    Masoud Darvish Ganji, Amir Mirnejad and Ali Najafi

    2010-01-01

    Full Text Available Methane adsorption onto single-wall boron nitride nanotubes (BNNTs and carbon nanotubes (CNTs was studied using the density functional theory within the generalized gradient approximation. The structural optimization of several bonding configurations for a CH4 molecule approaching the outer surface of the (8,0 BNNT and (8,0 CNT shows that the CH4 molecule is preferentially adsorbed onto the CNT with a binding energy of −2.84 kcal mol−1. A comparative study of nanotubes with different diameters (curvatures reveals that the methane adsorptive capability for the exterior surface increases for wider CNTs and decreases for wider BNNTs. The introduction of defects in the BNNT significantly enhances methane adsorption. We also examined the possibility of binding a bilayer or a single layer of methane molecules and found that methane molecules preferentially adsorb as a single layer onto either BNNTs or CNTs. However, bilayer adsorption is feasible for CNTs and defective BNNTs and requires binding energies of −3.00 and −1.44 kcal mol−1 per adsorbed CH4 molecule, respectively. Our first-principles findings indicate that BNNTs might be an unsuitable material for natural gas storage.

  13. Detection of Ag(+) using graphite carbon nitride nanosheets based on fluorescence quenching.

    Science.gov (United States)

    Bian, Wei; Zhang, Hao; Yu, Qing; Shi, Meijuan; Shuang, Shaomin; Cai, Zongwei; Choi, Martin M F

    2016-12-01

    The graphite carbon nitride (g-C3N4) nanosheets were synthesized and applied for the detection of Ag(+) ion in aqueous solutions. Transmission electron microscopy, Fourier infrared spectroscopy, x-ray diffraction, ultraviolet/visible and photoluminescence spectroscopy were used for characterization of g-C3N4 nanosheets. The fluorescence intensity of g-C3N4 nanosheets decreases with the increase in the concentration of Ag(+). The fluorescence probe can be applied for detection of Ag(+). The results show that it has high selectivity to Ag(+) and exhibits a good linearity over the concentration range 0.020-2.0μM with a detection limit of 27nM. Most cations do not have any interference on the detection of Ag(+). The quenching process is assessed and discussed. Finally, the g-C3N4 nanosheets have been successfully used for the detection of Ag(+) in real water samples. The recoveries of spiked water samples are >97%. PMID:27348047

  14. Interior edges induced half-metallic ferromagnetism in graphitic carbon nitride structures

    International Nuclear Information System (INIS)

    We study the magnetic properties of graphitic carbon nitride, g-C4N3. A microscopic tight-binding model incorporated with the Hatree mean-field approach is adopted, showing that the g-C4N3 exhibits the significant ferromagnetism induced from the edge states. These edge states appearing on the zigzag boundaries not only ffdeorm the flat band but also upon proper hole doping provide the electrons with single polarized spin exciting to the Dirac linear bands and causes g-C4N3 half-metallic. The half-metallicity survives at room temperature and does not require strong Coulomb repulsion for induction. The ferromagnetism of these states yielding the half-metallicity refers to the broken or imperfectness of the honeycomb lattice structure; specifically, the ferromagnetic states are formed on the zigzag boundaries surrounding the vacancies in the imperfect (some lattice points being missed or removed) honeycomb lattice. We thus indicate that the half-metallicity should be generally reachable in materials of this kind of structure. - Author-Highlights: • The ferromagnetism of g-C4N3 is generated on the zigzag edges of imperfect honeycomb lattice. • The hole doped g-C4N3 is half-metallic at room temperature. • The half-metallicity of g-C4N3 prefers to be induced in stronger Coulomb repulsion

  15. Self-floating graphitic carbon nitride/zinc phthalocyanine nanofibers for photocatalytic degradation of contaminants.

    Science.gov (United States)

    Xu, Tiefeng; Ni, Dongjing; Chen, Xia; Wu, Fei; Ge, Pengfei; Lu, Wangyang; Hu, Hongguang; Zhu, ZheXin; Chen, Wenxing

    2016-11-01

    The effective elimination of micropollutants by an environmentally friendly method has received extensive attention recently. In this study, a photocatalyst based on polyacrylonitrile (PAN)-supported graphitic carbon nitride coupled with zinc phthalocyanine nanofibers (g-C3N4/ZnTcPc/PAN nanofibers) was successfully prepared, where g-C3N4/ZnTcPc was introduced as the catalytic entity and the PAN nanofibers were employed as support to overcome the defects of easy aggregation and difficult recycling. Herein, rhodamine B (RhB), 4-chlorophenol and carbamazepine (CBZ) were selected as the model pollutants. Compared with the typical hydroxyl radical-dominated catalytic system, g-C3N4/ZnTcPc/PAN nanofibers displayed the targeted adsorption and degradation of contaminants under visible light or solar irradiation in the presence of high additive concentrations. According to the results of the radical scavenging techniques and the electron paramagnetic resonance technology, the degradation of target substrates was achieved by the attack of active species, including photogenerated hole, singlet oxygen, superoxide radicals and hydroxyl radicals. Based on the results of ultra-performance liquid chromatography and mass spectrometry, the role of free radicals on the photocatalytic degradation intermediates was identified and the final photocatalytic degradation products of both RhB and CBZ were some biodegradable small molecules. PMID:27239724

  16. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    International Nuclear Information System (INIS)

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN

  17. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  18. Carbon Doped MgB2 Thin Films using TMB

    Science.gov (United States)

    Wilke, R. H. T.; Li, Qi; Xi, X. X.; Lamborn, D. R.; Redwing, J.

    2007-03-01

    The most effective method to enhance the upper critical field in MgB2 is through carbon doping. In the case of thin films, ``alloying'' with carbon has resulted in enhanced Hc2 values estimated to be as high as 70 T for H parallel to ab and 40 T for H perpendicular ab [1]. ``Alloying'' refers to the in-situ Hybrid Physical-Chemical Vapor Deposition (HPCVD) of carbon containing MgB2 films using (C5H5)2Mg as the carbon source. While these films exhibit enhanced Hc2 values, there are amorphous boron- carbon phases in the grain boundaries that reduce the cross section area for superconducting current. We present here the results of our attempts to make more homogeneously carbon doped thin films using gaseuous trimethyl-boron (TMB) as the carbon source. Initial results indicate different behavior upon carbon doping using TMB from carbon-alloying. The microstructures and upper critical fields of the carbon doped films using TMB and carbon alloyed films will be compared. [1] V. Braccini et al., Phys. Rev. B 71 (2005) 012504. [2] A.V. Pogrebnyakov et al., Appl. Phys. Lett 85 (2004) 2017.

  19. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    International Nuclear Information System (INIS)

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N2 plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti1-xZrxN and Ti1-yTayN solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti1-yTayN films exhibited superior mechanical properties to Ti1-xZrxN films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity ρ∼65 μΩ cm being obtained for pure ZrN, while for Ti1-yTayN films a minimum was observed at y∼0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  20. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    Energy Technology Data Exchange (ETDEWEB)

    Abadias, G.; Koutsokeras, L. E.; Dub, S. N.; Tolmachova, G. N.; Debelle, A.; Sauvage, T.; Villechaise, P. [Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil (France); Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil, France and Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110 (Greece); Institute for Superhard Materials, NAS of Ukraine, Avtozavodskaya St. 2, 04074 Kiev (Ukraine); Kharkov Institute of Physics and Technology, Akademicheskaya St., 61108 Kharkov (Ukraine); Universite Paris-Sud 11, CSNSM, Ba circumflex t 108, 91405 Orsay Cedex (France); CNRS-CEMHTI, Site Cyclotron, 3A, rue de la Ferollerie, 45071 Orleans Cedex 2 (France); Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil (France)

    2010-07-15

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  1. Development of technology of nitride films manufacture for blades of gas turbine engines

    Directory of Open Access Journals (Sweden)

    С.Р. Ігнатович

    2004-02-01

    Full Text Available  Films of TiN on compressor blades of gas turbine engines are considered. Films are obtained with using plasma jet coater of capillary pulse-periodical plasmatrone. Diagnostics of films surface are performed.

  2. Growth of graphene films from non-gaseous carbon sources

    Science.gov (United States)

    Tour, James; Sun, Zhengzong; Yan, Zheng; Ruan, Gedeng; Peng, Zhiwei

    2015-08-04

    In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

  3. Optical and mechanical characterization of zirconia-carbon nanocomposite films

    International Nuclear Information System (INIS)

    The focus of the present work is the study of carbon co-deposition effect on the optical and mechanical properties of zirconia films. Optical and dielectric constant, band gap and transition lifetime of such composite systems were determined, as well as their elasticity properties. The thin ZrO2-x-C films were sputter-deposited on silicon and polycarbonate, from a pure ZrO2 and graphite targets in a radio-frequency argon plasma. Besides the zirconia phase and crystalline parameter changes induced by carbon addition, the electronic properties to the films were significantly modified: a drastical optical gap lowering was observed along an increased electronic dielectric constant and refractive index. The invariance of the film elasticity modulus and the similarity of the optical transition lifetime values with those of pure amorphous carbon films indicate an immiscibility of the ceramic and carbon components of the film structure

  4. Optical and mechanical characterization of zirconia-carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Laidani, N. [ITC-IRST, Divisione Fisica-Chimica delle Superfici ed Interfacce, Via Sommarive 18, 38050 Povo (Trento) (Italy)], E-mail: laidani@itc.it; Micheli, V.; Bartali, R.; Gottardi, G.; Anderle, M. [ITC-IRST, Divisione Fisica-Chimica delle Superfici ed Interfacce, Via Sommarive 18, 38050 Povo (Trento) (Italy)

    2008-02-15

    The focus of the present work is the study of carbon co-deposition effect on the optical and mechanical properties of zirconia films. Optical and dielectric constant, band gap and transition lifetime of such composite systems were determined, as well as their elasticity properties. The thin ZrO{sub 2-x}-C films were sputter-deposited on silicon and polycarbonate, from a pure ZrO{sub 2} and graphite targets in a radio-frequency argon plasma. Besides the zirconia phase and crystalline parameter changes induced by carbon addition, the electronic properties to the films were significantly modified: a drastical optical gap lowering was observed along an increased electronic dielectric constant and refractive index. The invariance of the film elasticity modulus and the similarity of the optical transition lifetime values with those of pure amorphous carbon films indicate an immiscibility of the ceramic and carbon components of the film structure.

  5. Coaxial carbon@boron nitride nanotube arrays with enhanced thermal stability and compressive mechanical properties

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Huang, Jingfeng; Tan, Dunlin; Zhang, Bowei; Teo, Edwin Hang Tong; Tok, Alfred Iing Yoong

    2016-05-01

    Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability. CNT arrays are grown using a commercially available thermal chemical vapor deposition (TCVD) technique and an outer BNNT with a wall thickness up to 1.37 nm is introduced by a post-growth TCVD treatment. Importantly, compared to the as-grown CNT arrays which deform almost plastically upon compression, the coaxial C@BNNT arrays exhibit an impressive ~4-fold increase in compressive strength with nearly full recovery after the first compression cycle at a 50% strain (76% recovery maintained after 10 cycles), as well as a significantly high and persistent energy dissipation ratio (~60% at a 50% strain after 100 cycles), attributed to the synergistic effect between the CNT and outer BNNT. Additionally, the as-prepared C@BNNT arrays show an improved structural stability in air at elevated temperatures, attributing to the outstanding thermal stability of the outer BNNT. This work provides new insights into tailoring the mechanical and thermal behaviours of arbitrary CNT arrays which enables a broader range of applications.Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability

  6. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    International Nuclear Information System (INIS)

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes

  7. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Science.gov (United States)

    Knoops, Harm C. M.; de Peuter, K.; Kessels, W. M. M.

    2015-07-01

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called "redeposition effect". This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  8. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    International Nuclear Information System (INIS)

    Recombination at silicon nitride (SiNx) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH3) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH3 plasma exposure causes (i) an increase in the density of Si≡N3 groups in both SiNx and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiNx/c-Si interface, and (iv) a reduction in the density of positive charge in SiNx. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiNx or a-Si. It is therefore important for device performance to minimize NH3 plasma exposure of SiNx or a-Si passivating films during subsequent fabrication steps

  9. Bond strengths of New Carbon-nitride-Related material C2N2(CH2)

    International Nuclear Information System (INIS)

    A new carbon-nitride-related material C2N2(CH2) nanopletelet was synthesized by subjecting a precursor C3N4HxOy+Au in a laser-heating diamond anvil cell (LHDAC) to the pressure of 40 GPa and the temperature of 1200-2000 K. The synthesized C2N2(CH2) was accordingly found to be an orthorhombic unit cell of the space group Cmc21 with lattice constants a = 7.625Å, b = 4.490Å, and c = 4.047Å. The bulk modulus B0 was determined to be B0 = 258 ± 3.4 GPa, only the 60 % that of the diamond. C2N2(CH2) consists of the tetrahedrally coordinated C with three C-N single bond and the one C-C single bond, and the bridging carbon with the C-CH2-C bond. The C-N single bond length of the tetrahedron ranges from 1.444 to 1.503 Å. This bond length is close to the C-N single bond of 1.447 to 1.458 Å in the superhard β-C3N4. The compressibility of the C-N and C-C single bond of C2N2(CH2) ranges from 0.976 to 0.982 with the pressure of 30 GPa. These values are very close to the compressibility of the C-N and C-C single bond of 0.978 to 0.982 in β-C3N4, cubic-C3N4, and diamond.

  10. ELECTROCHEMICAL INVESTIGATION ON CARBON NANOTUBE FILM WITH DIFFERENT PRETREATMENTS

    Institute of Scientific and Technical Information of China (English)

    C.G. Hu; W.L. Wang; Y. Ma; W. Zhu

    2003-01-01

    Wide potential windows were found at carbon nanotube film electrodes in neutral solutions after being treated with nitric acid and mixed acid. Electrochemical reversibility was investigated at carbon nanotube films with different pretreatments for ferri/ferrocyanide and quinone /hydroquinone. Carbon nanotube film electrodes presented quasi-reversible electrochemical behavior for both electrolytes. In the range of scan rate, carbon nanotube film electrodes treated with acids showed heterogeneous electron-transfer properties, which was mainly controlled by its electron state density on the surface of the film. On the whole, the carbon nanotube electrode with nitric acid treatment presented the best electrochemical behaviors, so we chose it as an analytical electrode to determine the trace compound in dilute solution. The results demonstrated that this new electrode material exhibits superior performance characteristics for the detection of azide anion.

  11. Low temperature CVD growth of ultrathin carbon films

    Science.gov (United States)

    Yang, Chao; Wu, Peng; Gan, Wei; Habib, Muhammad; Xu, Weiyu; Fang, Qi; Song, Li

    2016-05-01

    We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC) used in several device processing technologies.

  12. Tungsten nitride nanorods array grown on carbon cloth as an efficient hydrogen evolution cathode at all pH values

    International Nuclear Information System (INIS)

    It is highly desired but still remains a challenging task to develop efficient non-noble-metal hydrogen evolution reaction (HER) electrocatalysts operating efficiently under all pH conditions. In this paper, tungsten nitride nanorods array was developed on carbon cloth (WN NA/CC) through nitridation of corresponding WO3 NA/CC precursor with NH3 as an efficient 3D hydrogen evolution cathode with strong durability in acidic solutions. It needs overpotential of 198 mV to achieve current density of 10 mA cm−2 and it maintains its catalytic activity for at least 60 h. This electrode also performs well under both neutral and alkaline conditions. In addition, this electrode shows nearly 100% Faradaic efficiency at all pH values

  13. Corrosion resistance and electrical properties of carbon/chromium-titanium-nitride multilayer coatings on stainless steel

    Science.gov (United States)

    Feng, Kai; Li, Zhuguo; Lu, Fenggui; Huang, Jian; Cai, Xun; Wu, Yixiong

    2014-03-01

    High electrical conductivity and corrosion resistance are central to advances in wider application of metallic bipolar plates in polymer electrolyte membrane fuel cell (PEMFC). In this study, C/Cr-Ti-N multilayer coatings are deposited by physical vapor deposition and the effect of Cr:Ti ratio on the corrosion resistance and interfacial contact resistance (ICR) are systematically investigated. Scanning electron microscopy (SEM) result shows that the carbon layer is compact and uniform. Excellent corrosion resistance of 0.127 μA cm-2 current density at operating voltage in PEMFC cathode environment and low ICR of 2.03 mΩ-cm2 at compaction force of 150 N cm-2 are achieved when Cr:Ti ratio is 2:4 and 3:3, respectively. The significant enhancement in surface conductivity is probably because that the current comes from carbon paper is homogenized by two electrically conductive layers and flows to the passive film with much more contact area. After polarization, ICR increase to 3.07 mΩ-cm2 and 3.02 mΩ-cm2 in the simulated PEMFC cathode and anode environment, respectively. However, the Raman spectroscopy results disclose that the bonding type of top carbon film before and after polarization shows little difference. The results indicate that C/Cr-Ti-N multilayer coating with Cr:Ti ratio of 2:4 achieves the optimal composition.

  14. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    International Nuclear Information System (INIS)

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N2/NH3 environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces

  15. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  16. Investigation of the formation of Al, Fe, N intermetallic phases during Al pack cementation followed by plasma nitriding on plain carbon steel

    International Nuclear Information System (INIS)

    Highlights: • The surface hardness is increased about eight times. • Increasing nitriding time and temperature caused strengthening the Al diffused zone. • The inward diffusion of nitrogen and outward diffusion of iron changed aluminized zone microstructure. • Surface aluminum oxides are reduced by plasma nitriding in low pressure chamber with nitrogen and hydrogen in gas mixture. - Abstract: Plain carbon steels are not suitable for nitriding as they form an extremely brittle case that spalls off readily, and the hardness increment of the diffusion zone is small. In this research, the effect of plasma nitriding time and temperature variation on the microstructure of the pack cemented aluminized plain carbon steel is investigated. All samples were aluminized at 900 °C for 2 h; the aluminized samples were subsequently plasma nitrided at 500 °C, 550 °C and 600 °C for 2.5, 5, 7.5 and 10 h. The phases formed on the sample surface were detected by X-ray diffraction (XRD). The cross section and samples surface were investigated by optical and scanning electron microscopy (SEM). Microhardness test was conducted to determine hardness change from the surface to the sample core. Results showed that by aluminizing the steel, Fe3Al phases as well as Fe–Al solid solution were formed on the surface and some aluminum rich precipitates were formed in solid solution grain boundaries. Plasma nitriding of the aluminized layer caused the formation of aluminum and iron nitride (AlN, Fe4N) on the sample surface. Consequently, surface hardness was improved up to about eight times. By increasing the nitriding temperature and time, aluminum-rich precipitates dissociated. Moreover, due to the diffusion of nitrogen through aluminized region during ion nitriding, iron and aluminum nitrides were formed in aluminized grain boundaries. Increasing nitriding time and temperature lead to the growth of these nitrides in the grain boundaries of the substrate. This phenomenon results in

  17. Zirconium nitride films deposited in (Ar + N2 + H2) sputtering atmosphere: Optical, structural, and electrical properties

    International Nuclear Information System (INIS)

    Zr-N films were grown on glass substrates via radio-frequency magnetron sputtering using an Ar + N2 + H2 mixture. Hydrogen was employed in order to reduce oxygen contamination coming from background pressure, as confirmed by secondary ion mass spectroscopy analysis. The tuned process parameter was the nitrogen flux percentage (RN2) in the mixture. The crystallographic structure of the films was studied using x-ray diffraction. The measurements show that the films deposited at low RN2 (lower than or equal to 50%) crystallize in the rocksalt ZrN structure. As RN2 exceeds 50%, the film exhibits the co-presence of ZrN and Zr3N4 (denoted as o-Zr3N4) phases. When the deposition is performed in only nitrogen atmosphere (RN2 = 100%), a broad peak located at 2θ≅ 32.2 deg. is mainly attributed to the contribution coming from (320) planes of the o-Zr3N4. An envelope method, based on the optical reflection and transmission spectra taken at normal incidence, has been applied for the optical characterization of the nitride films. Such a method allows the determination of the samples' average thickness and optical constants (refractive index n and extinction coefficient k) in the ultraviolet-visible-near infrared regions. The evaluated thickness was about 2500 nm, which is in good agreement with the value obtained from profilometry. The absorption coefficient α was calculated from reflectance and transmittance spectra. The energy bandgap ranges from 2.3 eV to 2.4 eV. Electrical characterization was performed using capacitance-voltage measurements, which showed that the films evolve from insulating to semiconductor behavior when the nitrogen content in the sputtering atmosphere is decreased, confirming structural and optical results.

  18. A combined SNMS and EFTEM/EELS study on focused ion beam prepared vanadium nitride thin films

    Science.gov (United States)

    Kothleitner, Gerald; Rogers, M.; Berendes, A.; Bock, W.; Kolbesen, B. O.

    2005-09-01

    We investigated the diffusion profiles and core-loss fine-structures (ELNES) of thin vanadium nitride films by electron energy-loss spectroscopy (EELS) and energy filtering transmission electron microscopy (EFTEM). The nitride layers have been produced by rapid thermal processing in a NH 3 or N 2 atmosphere and have then been cross-sectioned with a focused ion beam instrument (FIB) under mild milling conditions to maintain crystallography. For the high-resolution electron energy-loss spectroscopy studies (HREELS), a recently developed TEM gun monochromator, implemented into a 200 kV field emission gun column was used in combination with a new post-column spectrometer. It was found that, dependent on substrate and atmosphere, layers with different vanadium and nitrogen content were formed, showing distinct differences in their ELNES. With an energy resolution at the 0.2 eV level and a TEM beam spot size of approximately 2 nm these layers could be unambiguously identified when compared to theoretical ELNES simulations from the literature.

  19. Poly(lactide-co-trimethylene carbonate) and Polylactide/Polytrimethylene Carbonate Blown Films

    OpenAIRE

    Li, Hongli; Chang, Jiangping; Qin, Yuyue; Wu, Yan; Yuan, Minglong; Zhang, Yingjie

    2014-01-01

    In this work, poly(lactide-co-trimethylene carbonate) and polylactide/ polytrimethylene carbonate films are prepared using a film blowing method. The process parameters, including temperature and screw speed, are studied, and the structures and properties of the P(LA-TMC) and PLA/PTMC films are investigated. The scanning electron microscope (SEM) images show that upon improving the content of TMC and PTMC, the lamellar structures of the films are obviously changed. With increasing TMC monomer...

  20. Workshop on diamond and diamond-like-carbon films for the transportation industry

    Energy Technology Data Exchange (ETDEWEB)

    Nichols, F.A.; Moores, D.K. [eds.

    1993-01-01

    Applications exist in advanced transportation systems as well as in manufacturing processes that would benefit from superior tribological properties of diamond, diamond-like-carbon and cubic boron nitride coatings. Their superior hardness make them ideal candidates as protective coatings to reduce adhesive, abrasive and erosive wear in advanced diesel engines, gas turbines and spark-ignited engines and in machining and manufacturing tools as well. The high thermal conductivity of diamond also makes it desirable for thermal management not only in tribological applications but also in high-power electronic devices and possibly large braking systems. A workshop has been recently held at Argonne National Laboratory entitled ``Diamond and Diamond-Like-Carbon Films for Transportation Applications`` which was attended by 85 scientists and engineers including top people involved in the basic technology of these films and also representatives from many US industrial companies. A working group on applications endorsed 18 different applications for these films in the transportation area alone. Separate abstracts have been prepared.

  1. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    Science.gov (United States)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  2. Enhanced thermal conductivity of polyimide films via a hybrid of micro- and nano-sized boron nitride.

    Science.gov (United States)

    Li, Tung-Lin; Hsu, Steve Lien-Chung

    2010-05-27

    A new thermally conductive polyimide composite film has been developed. It is based on a dispersion of different particle sizes of boron nitride (BN) in a polyimide (PI) precursor, polyamic acid (PAA). Subsequently, thermal imidization of PAA at 350 degrees C produced the corresponding polyimide composites. 3-Mercaptopropionic acid was used as the surfactant to modify the BN surface for the dispersion of BN in the polymer. The PI/BN composites showed different thermal conductivities at different proportion of BN particle sizes and contents. The thermal conductivity of the PI/BN composite was up to 1.2 W/m-k, for a mixture containing 30 wt % of micro and nanosized BN fillers in the polyimide matrix. The PI/BN composites had excellent thermal properties. Their glass transition temperatures were above 360 degrees C, and thermal decomposition temperatures were over 536 degrees C. PMID:20433158

  3. Novel phosphorus doped carbon nitride modified TiO2 nanotube arrays with improved photoelectrochemical performance

    Science.gov (United States)

    Su, Jingyang; Geng, Ping; Li, Xinyong; Zhao, Qidong; Quan, Xie; Chen, Guohua

    2015-10-01

    Novel phosphorus-doped graphitic-carbon nitride (P-C3N4) modified vertically aligned TiO2 nanotube arrays (NTs) were designed and synthesized. They can significantly enhance the conduction and utilization of photogenerated charge carriers of TiO2 NTs. The heterostructure was successfully fabricated through a three-step process: electrochemical anodization and wet-dipping followed by thermal polymerization. The prepared P-C3N4/TiO2 NTs exhibit enhanced light-absorption characteristics and improved charge separation and transfer ability, thus resulting in a 3-fold photocurrent (1.98 mA cm-2 at 0 V vs. Ag/AgCl) compared with that of pure TiO2 NTs (0.66 mA cm-2 at 0 V vs. Ag/AgCl) in 1 M NaOH solution. The prepared P-C3N4/TiO2 NT photoelectrodes also present excellent photocatalytic and photoelectrocatalytic capabilities in the degradation of methylene blue (MB). The kinetic rate of P-C3N4/TiO2 NTs in the photoelectrocatalytic process for MB is 2.7 times that of pristine TiO2 NTs. Furthermore, the prepared sample was used as a photoanode for solar-driven water splitting, giving a H2 evolution rate of 36.6 μmol h-1 cm-2 at 1.0 V vs. RHE under simulated solar light illumination. This novel structure with a rational design for a visible light response shows potential for metal free materials in photoelectrochemical applications.Novel phosphorus-doped graphitic-carbon nitride (P-C3N4) modified vertically aligned TiO2 nanotube arrays (NTs) were designed and synthesized. They can significantly enhance the conduction and utilization of photogenerated charge carriers of TiO2 NTs. The heterostructure was successfully fabricated through a three-step process: electrochemical anodization and wet-dipping followed by thermal polymerization. The prepared P-C3N4/TiO2 NTs exhibit enhanced light-absorption characteristics and improved charge separation and transfer ability, thus resulting in a 3-fold photocurrent (1.98 mA cm-2 at 0 V vs. Ag/AgCl) compared with that of pure TiO2 NTs (0

  4. Low-temperature (≤200 °C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    International Nuclear Information System (INIS)

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (2) as co-reactant. This process was developed in a Veeco NEXUS™ chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4–0.5 Å/cycle were achieved. Low electrical resistivity (4 g/cm3), low stress (85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  5. Network compaction and surface deformation in the hydrogenated silicon nitride film upon soft x-ray/VUV illumination

    International Nuclear Information System (INIS)

    In the present study, modifications in a hydrogenated silicon nitride film by soft x-ray/VUV (vacuum ultra violet) radiations are investigated using in situ soft x-ray reflectivity measurements at Indus-1 synchrotron source. The illumination experiments are performed at 10 deg. grazing incidence angle at which the majority of incident radiation (belonging to 10 eV-250 eV) are restricted to ∼8.0 nm depth, except near the Si-L absorption edge (100 eV) where photons penetrate much deeper into the film and initiate photochemical changes. Resultantly, the film density has increased along with a change in surface morphology. Due to illuminations, hydrogen bonds responsible for voids and network deformation are more likely to break and pave the path for the formation of more compact Si3N4 network. Evolution of hydrogen changes the surface morphology significantly. Atomic force microscopy confirms the formation of nano clusters at the surface. The out diffusion of hydrogen near the surface is responsible for surface deformation. Probable mechanism of surface modification and network compaction is discussed

  6. Flexible polyimide films hybrid with functionalized boron nitride and graphene oxide simultaneously to improve thermal conduction and dimensional stability.

    Science.gov (United States)

    Tsai, Mei-Hui; Tseng, I-Hsiang; Chiang, Jen-Chi; Li, Jheng-Jia

    2014-06-11

    Coupling agent-functionalized boron nitride (f-BN) and glycidyl methacrylate-grafted graphene (g-TrG) are simultaneously blended with polyimide (PI) to fabricate a flexible, electrically insulating and thermally conductive PI composite film. The silk-like g-TrG successfully fills in the gap between PI and f-BN to complete the thermal conduction network. In addition, the strong interaction between surface functional groups on f-BN and g-TrG contributes to the effective phonon transfer in the PI matrix. The thermal conductivity (TC) of the PI/f-BN composite films containing additional 1 wt % of g-TrG is at least doubled to the value of PI/f-BN and as high as 16 times to that of the pure PI. The hybrid film PI/f-BN-50/g-TrG-1 exhibits excellent flexibility, sufficient insulating property, the highest TC of 2.11 W/mK, and ultralow coefficient of thermal expansion of 11 ppm/K, which are perfect conditions for future flexible substrate materials requiring efficient heat dissipation. PMID:24863455

  7. Effect of oxygen on structural stability of nitrogen-doped germanium telluride films with and without silicon nitride layer

    International Nuclear Information System (INIS)

    Nitrogen-doped germanium telluride (N-GeTe) films with and without silicon nitride (SiN) layer were thermally annealed in an air atmosphere. The SiN layer prevented the oxidation of GeTe films despite the massive in-diffusion of oxygen atoms. The phase transition from cubic to rhombohedral phase occurred only in the air-annealed samples, not in the samples annealed at 2.0 mPa. The in-diffused oxygen is probably the leading cause of this phase transition. N-GeTe films without SiN layer showed an increase in sheet resistance after 1000 min of air annealing; this could be attributable to a phase transition from the cubic GeTe phase to the amorphous germanium oxide and metallic tellurium phases. - Highlights: ► SiN layer prevented oxidation of GeTe despite the massive in-diffusion of oxygen. ► The in-diffused oxygen have a critical role in the changes of crystal structure. ► N-GeTe exhibited phase transition into amorphous Ge oxide and metallic Te phase.

  8. Effect of oxygen on structural stability of nitrogen-doped germanium telluride films with and without silicon nitride layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki-Hong [AE group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd. Yongin, 446-712 (Korea, Republic of); Choi, Sang-Jun, E-mail: sangjun5545.choi@samsung.com [System LSI, Samsung Electronics Co. Ltd., Yong-In, 446-712 (Korea, Republic of); Kyoung, Yong-Koo; Lee, Jun-Ho [AE group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd. Yongin, 446-712 (Korea, Republic of)

    2012-03-30

    Nitrogen-doped germanium telluride (N-GeTe) films with and without silicon nitride (SiN) layer were thermally annealed in an air atmosphere. The SiN layer prevented the oxidation of GeTe films despite the massive in-diffusion of oxygen atoms. The phase transition from cubic to rhombohedral phase occurred only in the air-annealed samples, not in the samples annealed at 2.0 mPa. The in-diffused oxygen is probably the leading cause of this phase transition. N-GeTe films without SiN layer showed an increase in sheet resistance after 1000 min of air annealing; this could be attributable to a phase transition from the cubic GeTe phase to the amorphous germanium oxide and metallic tellurium phases. - Highlights: Black-Right-Pointing-Pointer SiN layer prevented oxidation of GeTe despite the massive in-diffusion of oxygen. Black-Right-Pointing-Pointer The in-diffused oxygen have a critical role in the changes of crystal structure. Black-Right-Pointing-Pointer N-GeTe exhibited phase transition into amorphous Ge oxide and metallic Te phase.

  9. Correlation between stress profiles of cubic boron nitride thin films and the phase sequence revealed from infrared data

    Science.gov (United States)

    Klett, A.; Malavé, A.; Freudenstein, R.; Plass, M. F.; Kulisch, W.

    Cubic boron nitride thin films have been ion-beam-assisted deposited on silicon cantilever structures and subsequently back-etched in order to study the stress evolution and finally the growth mechanisms. After each sputtering step, the film stress, the remaining thickness, and the IR data were examined. In this way, the layered sequence of cBN on top of a hBN base layer, influencing the development of the intrinsic film stress, could be studied in detail. The observed stress distribution can be divided into three regions. First, a non-cubic base layer with a constant stress value is formed, followed by a linear increase in the stress after cBN nucleation as a result of the coalescence of cBN nanocrystals. Finally, the stress reaches a second plateau characteristic of the cBN top layer. In addition, the layered sequence was verified by the evolution of the FTIR spectra. Furthermore, the fraction of the sp2-bonded material of the cBN top layer was determined from the IR data. For various deposition conditions, a linear relationship between the stress of the nanocrystalline cBN top layer and the amount of sp3-bonded material was observed. From this, it can be concluded that stress relaxation occurs at the sp2-bonded grain boundary material. No evidence for stress relaxation after cBN nucleation was found.

  10. Correlation between stress profiles of cubic boron nitride thin films and the phase sequence revealed from infrared data

    Energy Technology Data Exchange (ETDEWEB)

    Klett, A.; Malave, A.; Freudenstein, R.; Plass, M.F.; Kulisch, W. [Kassel Univ. (Gesamthochschule) (Germany). Inst. fuer Technische Physik

    1999-12-01

    Cubic boron nitride thin films have been ion-beam-assisted deposited on silicon cantilever structures and subsequently back-etched in order to study the stress evolution and finally the growth mechanisms. After each sputtering step, the film stress, the remaining thickness, and the IR data were examined. In this way, the layered sequence of cBN on top of a hBN base layer, influencing the development of the intrinsic film stress, could be studied in detail. The observed stress distribution can be divided into three regions. First, a non-cubic base layer with a constant stress value is formed, followed by a linear increase in the stress after cBN nucleation as a result of the coalescence of cBN nanocrystals. Finally, the stress reaches a second plateau characteristic of the cBN top layer. In addition, the layered sequence was verified by the evolution of the FTIR spectra. Furthermore, the fraction of the sp{sup 2}-bonded material of the cBN top layer was determined from the IR data. For various deposition conditions, a linear relationship between the stress of the nanocrystalline cBN top layer and the amount of sp{sup 3}-bonded material was observed. From this, it can be concluded that stress relaxation occurs at the sp{sup 2}-bonded grain boundary material. No evidence for stress relaxation after cBN nucleation was found. (orig.)

  11. Chemical Stripping of ceramic films of titanium aluminum nitride from hard metal substrates

    OpenAIRE

    U. Bardi; D. Bonacchi; Rizzi, G.; Scrivani, A.

    2003-01-01

    We report here the result of a study of different chemical stripping methodologies for ceramic coatings deposited by PVD on hard metal substrates. We show that an approach based on the study of the system by surface science techniques leads to the possibility of developing effective stripping methods as well as guidelines for improving the process. We will report about two methods tested for the stripping of layers of titanium aluminum nitride (TINALOX) deposited by Physical Vapor De...

  12. Atomic-Resolution Observations of Semi-Crystalline Integranular Thin Films in Silicon Nitride

    OpenAIRE

    Ziegler, Alexander; Idrobo, Juan C.; Cinibulk, Michael K.; Kisielowski, Christian; Nigel D. Browning; Ritchie, Robert O.

    2005-01-01

    The thin intergranular phase in a silicon nitride (Si3N4) ceramic, which has been regarded for decades as having an entirely amorphous morphology, is shown to have a semi-crystalline structure. Using two different but complementary high-resolution electron microscopy methods, the intergranular atomic structure was directly imaged at the atomic level. These high-resolution images show that the atomic arrangement of the dopand element cerium takes very periodic positions not only along the...

  13. Carbon nitride nanotube as a sensor for alkali and alkaline earth cations

    Energy Technology Data Exchange (ETDEWEB)

    Beheshtian, Javad [Department of Chemistry, Shahid Rajaee Teacher Training University, P.O. Box: 16875-163, Tehran (Iran, Islamic Republic of); Baei, Mohammad T. [Department of Chemistry, Azadshahr Branch, Islamic Azad University, Azadshahr, Golestan (Iran, Islamic Republic of); Bagheri, Zargham [Physics Group, Science Department, Islamic Azad University, Islamshahr Branch, P.O. Box: 33135-369, Islamshahr, Tehran (Iran, Islamic Republic of); Peyghan, Ali Ahmadi, E-mail: ahmadi.iau@gmail.com [Young Researchers Club, Islamic Azad University, Islamshahr Branch, Tehran (Iran, Islamic Republic of)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Adsorption of alkali and alkaline earth cations on a CN nanotube studied by DFT. Black-Right-Pointing-Pointer The alkaline cation adsorption may raise potential barrier of the electron emission. Black-Right-Pointing-Pointer The tube may act as a sensor in the presence of alkali and alkaline cations. - Abstract: Adsorption of several alkali (Li{sup +}, Na{sup +}, and K{sup +}) and alkaline earth (Be{sup 2+}, Mg{sup 2+}, and Ca{sup 2+}) cations on the surface of a zigzag (9, 0) carbon nitride nanotube has been investigated using density functional theory. It has been found that almost all of the cations prefer to be strongly chemisorbed at the center of porous site of the tube surface. The adsorption of alkaline cations much more influences the electronic properties of the tube, in comparison with the alkali ones, so that it is transformed from an intrinsic semiconductor with HOMO/LUMO energy gap of 4.02 eV to extrinsic p-type one with the gap of 0.54-1.94 eV. The alkaline cation adsorption may significantly raise potential barrier of the electron emission from the tube surface, hence impeding the field emission. It has been also concluded that the electrical sensitivity of the tube toward the cations may be in the order: Be{sup 2+} Much-Greater-Than Mg{sup 2+} Much-Greater-Than Ca{sup 2+} Much-Greater-Than Li{sup +} {approx} Na{sup +} {approx} K{sup +}.

  14. Deposition of chromium nitrides, oxy-nitrides and titanium carbides on steel substrates by DC magnetron sputtering

    International Nuclear Information System (INIS)

    The present paper deals with the deposition of chromium and titanium nitrides, oxynitrides, carbides and carbonitrides onto low carbon steel by reactive magnetron sputtering. The films were obtained by using different reactive gases (02, N2, CH4,). The process advancement and the corresponding film composition variations were investigated as a function of the specific reactivity of each gas. In addition, the cathode poisoning phenomena were studied. (author). 4 refs., 6 figs

  15. Effect of nitrogen flow ratio on structure and properties of zirconium nitride films on Si(100) prepared by ion beam sputtering

    Indian Academy of Sciences (India)

    Shahab Norouzian; Majid Mojtahedzadeh Larijani; Reza Afzalzadeh

    2012-10-01

    In this study, zirconium nitride thin films were deposited on Si substrates by ion beam sputtering (IBS). Influence of N2/(N2+Ar) on the structural and physical properties of the films has been investigated with respect to the atomic ratio between nitrogen and zirconium. It was found that the thickness of layers decreased by increasing the F(N2). Moreover, crystalline plane peaks such as (111), (200) and (220) with (111) preferred orientation were observed due to strain energy which associate with (111) orientation in ZrN. Also, the fluctuation in nitrogen flow ratio results in colour and electrical resistivity of films.

  16. Novel band gap-tunable K–Na co-doped graphitic carbon nitride prepared by molten salt method

    International Nuclear Information System (INIS)

    Graphical abstract: K and Na ions co-doped into g-C3N4 crystal lattice can tune the position of CB and VB potentials, influence the structural and optical properties, and thus improve the photocatalytic degradation and mineralization ability. - Highlights: • K, Na co-doped g-C3N4 was prepared in KCl/NaCl molten salt system. • The structural and optical properties of g-C3N4 were greatly influenced by co-doping. • The position of VB and CB can be tuned by controlling the weight ratio of eutectic salts to melamine. • Co-doped g-C3N4 showed outstanding photodegradation ability, mineralization ability, and catalytic stability. - Abstract: Novel band gap-tunable K–Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV–vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from −1.09 and +1.55 eV to −0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K–Na co-doping

  17. Novel band gap-tunable K–Na co-doped graphitic carbon nitride prepared by molten salt method

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jiannan [Institute of Eco-environmental Sciences, Liaoning Shihua University, Fushun 113001 (China); School of Environmental and Biological Engineering, Liaoning Shihua University, Fushun 113001 (China); Ma, Lin [School of Petrochemical Engineering, Liaoning Shihua University, Fushun 113001 (China); Wang, Haoying; Zhao, Yanfeng [School of Environmental and Biological Engineering, Liaoning Shihua University, Fushun 113001 (China); Zhang, Jian [School of Petrochemical Engineering, Liaoning Shihua University, Fushun 113001 (China); Hu, Shaozheng, E-mail: hushaozhenglnpu@163.com [Institute of Eco-environmental Sciences, Liaoning Shihua University, Fushun 113001 (China)

    2015-03-30

    Graphical abstract: K and Na ions co-doped into g-C{sub 3}N{sub 4} crystal lattice can tune the position of CB and VB potentials, influence the structural and optical properties, and thus improve the photocatalytic degradation and mineralization ability. - Highlights: • K, Na co-doped g-C{sub 3}N{sub 4} was prepared in KCl/NaCl molten salt system. • The structural and optical properties of g-C{sub 3}N{sub 4} were greatly influenced by co-doping. • The position of VB and CB can be tuned by controlling the weight ratio of eutectic salts to melamine. • Co-doped g-C{sub 3}N{sub 4} showed outstanding photodegradation ability, mineralization ability, and catalytic stability. - Abstract: Novel band gap-tunable K–Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N{sub 2} adsorption, Scanning electron microscope (SEM), UV–vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from −1.09 and +1.55 eV to −0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K–Na co-doping.

  18. SHG spectroscopy of gallium nitride thin films on sapphire with ultrashort pulses

    Science.gov (United States)

    Angerer, William Edward

    We present results of ultrafast second-harmonic generation spectroscopy of GaN/Alsb2Osb3 samples. We develop a formalism to calculate the nonlinear response of thin nonlinear films excited by an ultrashort laser source (Ti:Alsb2Osb3), and we use this formalism to extract chisbsp{zxx}{(2)}(omega=2omegasb{o}) and chisbsp{xzx}{(2)}(omega=2omegasb{o}) from our SHG measurements over a two photon energy range of 2.6-3.4 eV. By comparing spectra from several samples, we find a weak sub-band gap enhancement of chisbsp{zxx}{(2)}(omega=2omegasb{o}) at a two photon energy of 2.80 eV that is not present in chisbsp{xzx}{(2)}(omega=2omegasb{o}). This enhancement is independent of the carrier concentration, intentional doping, and presence of the "yellow luminescence band" defects. This feature may result from a three photon process involving a midgap defect state. We analyze three photon processes that include a defect state with group theory and demonstrate that several processes contribute to chisbsp{zxx}{(2)}(omega=2omegasb{o}) but not to chisbsp{xzx}{(2)}(omega=2omegasb{o}). In addition, we determined sample orientational miscuts by rotational SHG, and we found that these miscuts do not generate strain induced interface states. We determined a Sellmeier dispersion relationship for the index of refraction of GaN by a novel light transmission method, and we report on photoluminescence of our GaN/Alsb2Osb3 samples. In a second project we have designed and built a nonlinear optical microscope. We have used the new tool to perform preliminary investigations of the nonlinear optical properties of carbon nanoropes. We suggest that nonlinear optical microscopy is a potentially useful technique for analyzing carbon nanotube symmetry, as well as in studies of other heterogeneities. Finally, we place an upper limit on the dominant second order hyperpolarizability, alphasbsp{zzz}{(2)}, of carbon nanotubes based on our nonlinear optical microscopy measurements.

  19. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %). PMID:27128407

  20. Highly Efficient Photocatalytic H2 Evolution from Water using Visible Light and Structure-Controlled Graphitic Carbon Nitride.

    OpenAIRE

    Martin, D. J.; Qiu, K.; Shevlin, S. A.; Handoko, A. D.; Chen, X.; Guo, Z.; Tang, J.

    2014-01-01

    The major challenge of photocatalytic water splitting, the prototypical reaction for the direct production of hydrogen by using solar energy, is to develop low-cost yet highly efficient and stable semiconductor photocatalysts. Herein, an effective strategy for synthesizing extremely active graphitic carbon nitride (g-C3 N4 ) from a low-cost precursor, urea, is reported. The g-C3 N4 exhibits an extraordinary hydrogen-evolution rate (ca. 20 000 μmol h(-1)  g(-1) under full arc), which leads to ...

  1. Sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride photocatalyst: insights from first principles

    OpenAIRE

    Stolbov, Sergey; Zuluaga, Sebastian

    2012-01-01

    We present here results of our first principles studies of the sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride (g-C3N4). Using the Ab initio thermodynamics approach combined with some kinetic analysis, we reveal the favorable S-doping configurations By analyzing the valence charge densities of the doped and un-doped systems, we find that sulfur partially donates its px- and py- electrons to the system with some back donation to the S pz-states. To ...

  2. A Comparison of the Effects of RF Plasma Discharge and Ion Beam Supply on the Growth of Cubic Boron Nitride Films Formed by Laser Physical Vapor Deposition

    Science.gov (United States)

    Kaneda, Kayo; Shibata, Kimihiro

    1994-01-01

    This paper presents a comparison of the effects of RF plasma discharge and ion beam supply on the growth of cubic boron nitride films formed by excimer laser physical vapor deposition (laser PVD). The film structure was analyzed by fourier transformation infrared region (FT-IR) spectroscopy and thin-film X-ray diffraction analysis. The structure of the film deposited with an RF plasma discharge provided between the substrate and target was hexagonal BN. On the other hand, that of the film deposited by irradiating the substrate directly with an ion beam was hexagonal BN (hBN) and cubic BN (cBN). It is thought that direct irradiation of the vapor generated from the target by accelerated ions increased the activation energy of the vapor, with the result that the film structure was changed. Besides irradiating the substrate directly with the ion beam resulted primarily in the etching of hBN while cBN remained.

  3. Preparation of Poly(p-phenylene sulfi de)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

    Institute of Scientific and Technical Information of China (English)

    WU Jieli; WANG Jinwen; CHEN Feng

    2015-01-01

    The present work enhanced the thermal conductivity of poly(p-phenylene sulfi de)/expanded graphites and poly(p-phenylene sulfi de)/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbonfi llers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

  4. Physical properties of chemical vapour deposited nanostructured carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India); Rajpure, K.Y., E-mail: rajpure@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, Maharashtra 416004 (India)

    2011-02-03

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C{sub 10}H{sub 16})' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp{sup 3} bonds with diamond phase and less for SS shows graphitization effect with dominant sp{sup 2} bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  5. Characterization of zirconium nitride films sputter deposited with an extensive range of nitrogen flow rates

    International Nuclear Information System (INIS)

    ZrNx films are deposited by rf magnetron sputtering using a wide range of nitrogen flow rates to control film properties. Scanned probe microscope (SPM) oxidation is presented as a complimentary characterization tool to x-ray diffraction, colorimetric, and four point probe analyses. The SPM oxidation behavior of the ZrNx films is related to their structural, optical, and electrical properties. Whereas stoichiometric ZrN films have applications as protective and/or decorative coatings, ZrNx films sputtered with higher nitrogen flow rates have potential applications in devices where arrays of high aspect ratio nanostructures would be useful

  6. Facile One-Step Synthesis of Hybrid Graphitic Carbon Nitride and Carbon Composites as High-Performance Catalysts for CO2 Photocatalytic Conversion.

    Science.gov (United States)

    Wang, Yangang; Bai, Xia; Qin, Hengfei; Wang, Fei; Li, Yaguang; Li, Xi; Kang, Shifei; Zuo, Yuanhui; Cui, Lifeng

    2016-07-13

    Utilizing and reducing carbon dioxide is a key target in the fight against global warming. The photocatalytic performance of bulk graphitic carbon nitride (g-C3N4) is usually limited by its low surface area and rapid charge carrier recombination. To develop g-C3N4 more suitable for photocatalysis, researchers have to enlarge its surface area and accelerate the charge carrier separation. In this work, novel hybrid graphitic carbon nitride and carbon (H-g-C3N4/C) composites with various carbon contents have been developed for the first time by a facile one-step pyrolysis method using melamine and natural soybean oil as precursors. The effect of carbon content on the structure of H-g-C3N4/C composites and the catalytic activity for the photoreduction of CO2 with H2O were investigated. The results indicated that the introduction of carbon component can effectively improve the textural properties and electronic conductivity of the composites, which exhibited imporved photocatalytic activity for the reduction of CO2 with H2O in comparison with bulk g-C3N4. The highest CO and CH4 yield of 22.60 μmol/g-cat. and 12.5 μmol/g-cat., respectively, were acquired on the H-g-C3N4/C-6 catalyst with the carbon content of 3.77 wt % under 9 h simulated solar irradiation, which were more than twice as high as that of bulk g-C3N4. The remarkably increased photocatalytic performance arises from the synergistic effect of hybrid carbon and g-C3N4. PMID:27112547

  7. EXPERIMENTAL STUDY ON SUPERFICIAL COAT OF GEARS OF NITRIDED 32Cr2MoV COATED WITH TiN FILM BY MULTI-ARC ION PLATING

    Institute of Scientific and Technical Information of China (English)

    LI Hui; LI Runfang; XU Hongbin; ZHANG Jin

    2007-01-01

    After 32CrMoV is selected to manufacture nitrided gears coated with TiN by multi-arc ion plating, all of these uncoated gears and coated gears run in the gearbox under the same initial conditions so as to compare their difference concerning properties and microstructure. Experiment results indicate that tooth surface of the coated-TiN gears does not suffer surface abnormalities in meshed zone. Instead, the gears with nitrided case exhibit an abrasion mark on the meshed zone of tooth surface, which results in more weight loss of nitrided gears. The morphology of the surface suggests TiN film with more than 2000 HV is so dense and smooth that coated-TiN gears have higher wear resistance compared with the uncoated gears. The microstructure of coated-TiN gears is finer, hardness is higher and its distribution of coated-TiN gears is more reliable than uncoated ones, which makes nitride layer combined with TiN film tightly. Consequently, the wear-resistance of gears has been dramatically promoted.

  8. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  9. Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD

    International Nuclear Information System (INIS)

    Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

  10. The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

    Science.gov (United States)

    Zhang, Pengzhan; Chen, Kunji; Lin, Zewen; Dong, Hengping; Li, Wei; Xu, Jun; Huang, Xinfan

    2015-06-01

    Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05-2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width EU) but also created N-Si-O (Nx) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (EPL) is independent of the excitation energy (Eexc) and the PL intensity (IPL) is regardless of the optical band gap (Eopt) but is proportional to the Nx defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the EPL is proportional to Eexc (when Eexc ≤ Eopt) and the IPL is dependent on the relative position of Eexc and Eopt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films.

  11. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP (United Kingdom); Peuter, K. de; Kessels, W. M. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  12. Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films

    Institute of Scientific and Technical Information of China (English)

    王万录; 廖克俊; 李勇; 王永田

    2003-01-01

    The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.

  13. Deposition of diamond and boron nitride films by plasma chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Gomez-Aleixandre, C. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Sanchez-Garrido, O. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Vazquez, L. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.; Martinez-Duart, J.M. [Universidad Autonoma, CSIC, Madrid (Spain). Inst. of Mater. Sci.

    1995-01-01

    The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters (i.e. gas mixture, substrate conditioning, plasma discharges etc.) which favour the formation of the cubic phase. Most of the work is devoted to diamond owing to the large progress attained in this material. In fact, the use of diamond as a hard protective coating is now on a commercial scale. By contrast, the preparation of c-BN layers with good characteristics still needs of further research. ((orig.))

  14. Intrinsic graphene field effect transistor on amorphous carbon films

    OpenAIRE

    Tinchev, Savcho

    2013-01-01

    Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

  15. Structural investigations of local non-homogeneities in thermally treated nitrided layers in carbon steels

    International Nuclear Information System (INIS)

    In order to improve steel performance in some applications the nitrided layers in steel may be subjected to additional heat treatment. One of the forms of such treatment is the incorporate quench hardening from the diphase α-γ area on the Fe-C diagram. This treatment results in secondary diffusion of nitrogen into the base metal, decompose of the surface nitride layer and an increase in the thickness of the hardened layer. An incomplete α-γ transition creates zones of varied bainite-martensite structures with varying nitrogen concentration and hardness. (author)

  16. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  17. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  18. Graphene diamond-like carbon films heterostructure

    Science.gov (United States)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  19. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  20. Graphene diamond-like carbon films heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B., E-mail: r.jackman@ucl.ac.uk [London Centre for Nanotechnology, Electronic and Electrical Engineering Department, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.