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Sample records for carbon nitride films

  1. Deposition of carbon nitride films for space application

    Institute of Scientific and Technical Information of China (English)

    Feng Yu-Dong; Xu Chao; Wang Yi; Zhang Fu-Jia

    2006-01-01

    Carbon nitride thin films were prepared by electron-beam evaporation assisted with nitrogen ion bombardment and TiN/CNx composite films were by unbalanced dc magnetron sputtering, respectively. It was found that the sputtered films were better than the evaporated films in hardness and adhesion. The experiments of atomic oxygen action, cold welding, friction and wearing were emphasized, and the results proved that the sputtered TiN/CNx composite films were suitable for space application.

  2. Preparation of carbon-nitride bulk samples in the presence of seed carbon-nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. I. [Korea University of Technology and Education, Chonan (Korea, Republic of); Zorov, N. B. [Moscow State University, Moscow (Russian Federation)

    2004-05-15

    A procedure was developed for preparing bulk carbon-nitride crystals from polymeric alpha-C{sub 3}N{sub 4.2} at high pressure and high temperature in the presence of seeds of crystalline carbon-nitride films prepared by using a high-voltage discharge plasma combined with pulsed laser ablation of a graphite target. The samples were evaluated by using X-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrated that the nitrogen composition in the alpha-C{sub 3}N{sub 4.2} material, which initially contained more than 58 % nitrogen, decreased during the annealing process and reached a common, stable composition of approx 45 %. The thermobaric experiments were performed at 10 - 77 kbar and 350 - 1200 .deg. C.

  3. Amorphous carbon buffer layers for separating free gallium nitride films

    Science.gov (United States)

    Altakhov, A. S.; Gorbunov, R. I.; Kasharina, L. A.; Latyshev, F. E.; Tarala, V. A.; Shreter, Yu. G.

    2016-11-01

    The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the "GaN film-Al2O3" substrate interface decreases, which facilitates separation of the GaN layers.

  4. Anisotropies in magnetron sputtered carbon nitride thin films

    Science.gov (United States)

    Hellgren, Niklas; Johansson, Mats P.; Broitman, Esteban; Hultman, Lars; Sundgren, Jan-Eric

    2001-04-01

    Carbon nitride CNx (0⩽x⩽0.35) thin films, deposited by reactive dc magnetron sputtering in Ar/N2 discharges have been studied with respect to microstructure using electron microscopy, and elastic modulus using nanoindentation and surface acoustic wave analyses. For growth temperature of 100 °C, the films were amorphous, and with an isotropic Young's modulus of ˜170-200 GPa essentially unaffected by the nitrogen fraction. The films grown at elevated temperatures (350-550 °C) show anisotropic mechanical properties due to a textured microstructure with standing basal planes, as observed from measuring the Young's modulus in different directions. The modulus measured in the plane of the film was ˜60-80 GPa, while in the vertical direction the modulus increased considerably from ˜25 to ˜200 GPa as the nitrogen content was increased above ˜15 at. %.

  5. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  6. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  7. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  8. Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

    Science.gov (United States)

    Tucker, Mark D.; Czigány, Zsolt; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna

    2014-04-01

    Carbon and carbon nitride films (CNx, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A "fullerene-like" (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CNx films, was observed in films deposited at 175 °C and above, with N2 pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp3-hybridized films to sp2 films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CNx films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

  9. Filtered pulsed cathodic arc deposition of fullerene-like carbon and carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Tucker, Mark D., E-mail: martu@ifm.liu.se; Broitman, Esteban; Näslund, Lars-Åke; Hultman, Lars; Rosen, Johanna [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Czigány, Zsolt [Institute for Technical Physics and Materials Science, RCNS, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)

    2014-04-14

    Carbon and carbon nitride films (CN{sub x}, 0 ≤ x ≤ 0.26) were deposited by filtered pulsed cathodic arc and were investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. A “fullerene-like” (FL) structure of ordered graphitic planes, similar to that of magnetron sputtered FL-CN{sub x} films, was observed in films deposited at 175 °C and above, with N{sub 2} pressures of 0 and 0.5 mTorr. Higher substrate temperatures and significant nitrogen incorporation are required to produce similar FL structure by sputtering, which may, at least in part, be explained by the high ion charge states and ion energies characteristic of arc deposition. A gradual transition from majority sp{sup 3}-hybridized films to sp{sup 2} films was observed with increasing substrate temperature. High elastic recovery, an attractive characteristic mechanical property of FL-CN{sub x} films, is evident in arc-deposited films both with and without nitrogen content, and both with and without FL structure.

  10. Improvement of orthodontic friction by coating archwire with carbon nitride film

    Energy Technology Data Exchange (ETDEWEB)

    Wei Songbo [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Shao Tianmin, E-mail: shaotm@mail.tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Ding Peng [Department of Orthodontics, Peking University School and Hospital of Stomatology, Beijing 100081 (China)

    2011-10-01

    In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp{sup 2} carbon dominated structures, and diversiform bonds (N-C, N{identical_to}C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp{sup 2}C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

  11. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  12. Surface morphology stabilization by chemical sputtering in carbon nitride film growth

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J G [Institute for Molecules and Materials (IMM), Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Vazquez, L [Instituto de Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049 Madrid (Spain)

    2008-01-07

    We have studied the influence of chemical sputtering effects on the morphology of carbon nitride films grown on silicon substrates by electron cyclotron resonance chemical vapour deposition. This study has been performed by comparing the evolution of their morphology with that of hydrogenated amorphous carbon films grown under similar conditions, where these effects are not present. When chemical sputtering effects operate we observe a film surface stabilization for length scales in the 60-750 nm range after a threshold roughness of about 3-4 nm has been developed. This stabilization is explained on the basis of the re-emission of nitrogen etching species, which is confirmed by growth experiments on microstructured substrates. (fast track communication)

  13. [FTIR spectroscopic studies of inner stress on boron carbon nitride thin films].

    Science.gov (United States)

    Wang, Yu-Xin; Zheng, Ya-Ru; Song, Zhe; Feng, Ke-Cheng; Zhao, Yong-Nian

    2008-07-01

    Boron carbon nitride thin films were deposited by radio frequency (RF) magnetron sputtering technique using a 50 mm-diameter composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The composite target was composed of two semi disks: one of h-BN and the other one of graphite. The distance between the target and the substrate was kept at 50 mm. The chamber base pressure was below 5 x 10(-4) Pa. During the deposition, the mixture of Ar (80%) and N2 (20%) was injected into the vacuum chamber and the total pressure was 1.3 Pa. The films were grown on silicon substrates at different deposition parameters, including sputtering power of 80-130 W, deposition temperature of 300-500 degrees C and deposition time of 1-4 h. The chemical bonding state of the samples was characterized by Fourier transform infrared absorption spectroscopy (FTIR). The results suggested that all of the films deposited at these deposition parameters are atomic-level hybrids composed of B, C and N atoms. Besides BN and carbons bonds, the boron carbide and carbon nitride bonds were formed in the BCN thin films. And the deposition parameters have important influences on the growth and inner stress of BCN thin films. That is the higher the sputtering power, the larger the inner stress; the higher or lower the deposition temperature, the larger the inner stress; the longer the deposition time, the larger the inner stress. So changing deposition parameters properly is a feasible method to relax the inner stress between the films and substrate. In the conditions of changing one parameter each time, the optimum deposition parameters to prepare BCN thin films with lower inner stress were obtained: sputtering power of 80 W, deposition temperature of 400 degrees C and deposition time of 2 h.

  14. Optical properties of plasma deposited amorphous carbon nitride films on polymer substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, S.H., E-mail: abo_95@yahoo.co [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); El-Hossary, F.M. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Gamal, G.A.; Kahlid, M.M. [Physics Department, Faculty of Science, South Valley University, 83523 Qena (Egypt)

    2010-01-01

    Amorphous carbon nitride thin films were deposited on polymer substrates using radio frequency (rf) plasma in a mixture of nitrogen (N{sub 2}) and acetylene (C{sub 2}H{sub 2}) gasses. The samples were prepared at different rf plasma power (350, 400, 450, 500, and 550 W), at constant plasma exposure time of 10 min, and constant N{sub 2}/C{sub 2}H{sub 2} ratio of 50%. The crystal structure and surface morphology of the prepared samples were examined using X-ray diffraction and atomic force microscopy analysis, respectively. The absence of the carbon nitride diffraction peaks confirms the amorphous nature of these films. The root mean square roughness of the films increased from 3.77 to 25.22 nm as the power increased from 350 to 550 W. The thickness and the deposition rate were found to increase with increasing plasma power. Over the whole studied wavelength range, from 200 to 2500 nm, the transmittance decreased with increasing plasma power. A shift in the onset of absorption towards higher wavelengths with increasing plasma power, indicating a decrease in the optical band gap, has been observed. The refractive index values were found to decrease while the extinction coefficient increased with increasing plasma power.

  15. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

    Directory of Open Access Journals (Sweden)

    Shaestagir Chowdhury

    2008-04-01

    Full Text Available An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET, temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.

  16. Correlation of photothermal conversion on the photo-induced deformation of amorphous carbon nitride films prepared by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Harata, T.; Aono, M., E-mail: aono@nda.ac.jp; Kitazawa, N.; Watanabe, Y. [Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686 (Japan)

    2014-08-04

    The photo-induced deformation of hydrogen-free amorphous carbon nitride (a-CN{sub x}) films was investigated under visible-light illumination. The films gave rise to photothermal conversion by irradiation. In this study, we investigated the effects of thermal energy generated by irradiation on the deformation of a-CN{sub x}/ultrathin substrate bimorph specimens. The films were prepared on both ultrathin Si and SiO{sub 2} substrates by reactive radio-frequency magnetron sputtering from a graphite target in the presence of pure nitrogen gas. The temperature of the film on the SiO{sub 2} substrate increased as the optical band-gap of the a-CN{sub x} was decreased. For the film on Si, the temperature remained constant. The deformation degree of the films on Si and SiO{sub 2} substrates were approximately the same. Thus, the deformation of a-CN{sub x} films primarily induced by photon energy directly.

  17. Single-step synthesis of crystalline h-BN quantum- and nanodots embedded in boron carbon nitride films

    Science.gov (United States)

    Matsoso, Boitumelo J.; Ranganathan, Kamalakannan; Mutuma, Bridget K.; Lerotholi, Tsenolo; Jones, Glenn; Coville, Neil J.

    2017-03-01

    Herein we report on the synthesis and characterization of novel crystalline hexagonal boron nitride (h-BN) quantum- and nanodots embedded in large-area boron carbon nitride (BCN) films. The films were grown on a Cu substrate by an atmospheric pressure chemical vapour deposition technique. Methane, ammonia, and boric acid were used as precursors for C, N and B to grow these few atomic layer thick uniform films. We observed that both the size of the h-BN quantum/nanodots and thickness of the BCN films were influenced by the vaporization temperature of boric acid as well as the H3BO3 (g) flux over the Cu substrate. These growth conditions were easily achieved by changing the position of the solid boric acid in the reactor with respect to the Cu substrate. Atomic force microscope (AFM) and TEM analyses show a variation in the h-BN dot size distribution, ranging from nanodots (∼224 nm) to quantum dots (∼11 nm) as the B-source is placed further away from the Cu foil. The distance between the B-source and the Cu foil gave an increase in the C atomic composition (42 at% C–65 at% C) and a decrease in both B and N contents (18 at% B and 14 at% N to 8 at% B and 7 at% N). UV–vis absorption spectra showed a higher band gap energy for the quantum dots (5.90 eV) in comparison with the nanodots (5.68 eV) due to a quantum confinement effect. The results indicated that the position of the B-source and its reaction with ammonia plays a significant role in controlling the nucleation of the h-BN quantum- and nanodots. The films are proposed to be used in solar cells. A mechanism to explain the growth of h-BN quantum/nanodots in BCN films is reported.

  18. CARBON NITRIDE FILMS PREPARED AT DIFFERENT N2/Ar RATIOS BY CLOSED FIELD UNBALANCED REACTIVE MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    A. Vyas; K.Y. Li; Z.F. Zhou; Y.G. Shen

    2005-01-01

    Carbon nitride (CNx) thin films have been deposited onto Si(100) (for structural and mechanical analyses) and M42 high-speed-steel (for tribological measurements) substrates at room temperature by closed-field unbalanced magnetron sputtering. The mechanical and tribological properties of these films were highly dependent on the N/C concentration ratio that was adjusted by the F(N2)/F(Ar) flow-rate ratio at fixed substrate biasing of -60V during deposition. The films were characterized by employing scanning electron microscopy (SEM), atomic force microscopy(AFM), nano-indentation measurements, X-ray photoelectron spectroscopy (XPS), Raman scattering and Fourier transform infrared (FTIR) spectroscopy, pin-on-disc tribometer, scratch tester, and Rockwell-C tester. The results showed that the N content in the films increased with the N2 pressure. However, the maximum N/C ratio obtained was 0.25. The nanohardness was measured to be in the range of 11.7-20.8GPa depending on the N/C ratios. The XPS N 1s spectra showed the existence of both N-C sp2 and N-C sp3 bonds in films. Raman and FTIR spectra exhibited that N-C bonds were fewer when compared to other N-C bonds. The friction coefficient of the film deposited onto steel substrate with N/C=0.26 was measured to be ~0.08and for film with N/C=0.22 a high critical load of 70N was obtained. The tribological data also showed that the wear rates of these films were in the range of~10-16m3/Nm, indicating excellent wear resistance for CNxfilms.

  19. Albumin and fibrinogen adsorption on boron nitride and carbon-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lousinian, S.; Kalfagiannis, N. [Laboratory for Thin Films - Nanosystems and Nanometrology (LTFN), Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Logothetidis, S. [Laboratory for Thin Films - Nanosystems and Nanometrology (LTFN), Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)], E-mail: logot@auth.gr

    2008-08-25

    The haemocompatibility (in the sense of the least possibility of thrombus formation/thrombogenicity potential) of homogeneous and amorphous BN (a-BN) thin films through the adsorption of two basic blood plasma proteins, human serum albumin (HSA) and fibrinogen (Fib) is explored in this work. A comparative study of the thrombogenicity potential of BN, amorphous carbon (a-C) and amorphous hydrogenated carbon thin films (a-C:H) is also presented. a-BN and a-C thin films were produced by radio frequency (RF) magnetron sputtering onto c-Si (1 0 0) substrates under various values of substrate bias voltage. a-C:H thin films were developed by RF Reactive MS, with various values of substrate bias voltage and under different values of H{sub 2} partial pressure during deposition. For the consideration of the optical, compositional and structural properties of the films Spectroscopic Ellipsometry in the energy region of 1.5-6.5 eV was used, while for the study of surface topography and wetting properties Atomic Force Microscopy and Contact Angle measurements were additionally employed. The properties of the thin films were correlated with their thrombogenicity, through the estimation of the ratio of HSA/Fib surface concentration. a-BN films exhibit the smallest possibility of clot formation, with their wetting properties determining the thickness of the Fib layer formed on them as well as the ratio of HSA/Fib surface concentration. In the case of a-C thin films, the increase of % sp{sup 3} content is crucial, while the value of the fundamental gap seems to influence the possibility for clot formation on a-C:H thin films.

  20. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  1. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

    2000-07-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  2. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  3. Investiagtion of Nanoscale Carbon Nitride Thin Films Grown Using DC HCD Hollow Cathode Discharge%用直流中空阴极放电方法(DC HCD)生长的纳米级碳的氮化物薄膜研究

    Institute of Scientific and Technical Information of China (English)

    YAN Y.H.; SHI Y.C.; YANG P.; TANG X.L.; FENG P.X.

    2005-01-01

    There is growing interest in the underlying physical processes in optoelectronic devices based on thin-film multilayer structures. Recently, many investigators have made great efforts on synthesizing the ultra - hard nanoscale carbon nitride thin films. Considering low cost and simple configuration, we used DC hollow cathode discharge (HCD) for deposition of nanoscale carbon nitride thin films.

  4. Studies on Wear and Corrosion Resistances of Carbon Nitride Thin Films on Ti Alloy

    Institute of Scientific and Technical Information of China (English)

    LiJin-chai; GuoHuai-xi; LuXlan-feng; ZhangZhi-hong; YeMing-sheng

    2003-01-01

    CNx/SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD ). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction (XRD) measurement revealed that the composite films possessed α-C3N4 structure.The microhardness of the films was 48 to 50 GPa. In or der totest the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CNx/SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0. 9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CNx films had excellent charac-teristics of wear and corrosion resistances compared with Ti alloy substrate samples.

  5. Studies on Wear and Corrosion Resistances of Carbon Nitride Thin Films on Ti Alloy

    Institute of Scientific and Technical Information of China (English)

    Li Jin-chai; Guo Huai-xi; Lu Xian-feng; Zhang Zhi-hong; Ye Ming-sheng

    2003-01-01

    CNx/SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD ). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction (XRD) measurement revealed that the composite films possessed α-C3N4 structure.The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CNx/SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0. 9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CNx films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.

  6. Synthesis of Crystalline Carbon Nitride Thin Films by Pulsed Arc Discharge at Atmospheric Pressure

    Institute of Scientific and Technical Information of China (English)

    SHI Changyong; MA Zhibin

    2007-01-01

    The preparation of crystalline C3N4 films was investigated using pulsed arc discharge from mixed methanol and ammonia water at atmospheric pressure.The X-ray diffraction(XRD)patterns of the films prepared at a substrate temperature of 450℃ suggested that the film was composed of α-C3N4 and β-C3N4 crystallites.Raman spectra exhibited distinct peaks which are in good agreement with those predicted theoretically for C3N4 crystallites.

  7. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P, B

    2001-07-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  8. Effect of acetic acid on electrochemical deposition of carbon-nitride thin film

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Electrochemical deposition method was employed to prepare CNx thin film from methanol-urea solution,and it was shown that adding a little acetic acid in the solution significantly affected the deposition process.After optimizing the experiment conditions,we obtained polycrystalline grains with sizes of about 3―7μm on the faces of single crystal silicon.X-ray diffraction spectrua indicate that the grains are mainly composed of cubic phase mixed with a small amount of β and α phases.

  9. Dangling bond energetics in carbon nitride and phosphorus carbide thin films with fullerene-like and amorphous structure

    OpenAIRE

    Kostov Gueorguiev, Gueorgui; Broitman, E; Furlan, Andrej; Stafström, Sven; Hultman, Lars

    2009-01-01

    The energy cost for dangling bond formation in Fullerene-like Carbon Nitride (FL-CNx) and Phosphorus carbide (FL-CPx) as well as their amorphous counterparts: a-CNx, a-CPx, and a-C has been calculated within the framework of Density Functional Theory and compared with surface water adsorption measurements. The highest energy cost is found in the FL-CNx ( about 1.37 eV) followed by FL-CPx compounds (0.62-1.04 eV). (C) 2009 Elsevier B. V. All rights reserved. Original Publication:Gueorgui K...

  10. Laser ablation of molecular carbon nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, D., E-mail: d.fischer@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Schwinghammer, K. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany); Sondermann, C. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Lau, V.W.; Mannhart, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Lotsch, B.V. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Department of Chemistry, University of Munich, LMU, Butenandtstr. 5-13, 81377 Munich (Germany); Nanosystems Initiative Munich (NIM) and Center for Nanoscience (CeNS), 80799 Munich (Germany)

    2015-09-15

    We present a method for the preparation of thin films on sapphire substrates of the carbon nitride precursors dicyandiamide (C{sub 2}N{sub 4}H{sub 4}), melamine (C{sub 3}N{sub 6}H{sub 6}), and melem (C{sub 6}N{sub 10}H{sub 6}), using the femtosecond-pulsed laser deposition technique (femto-PLD) at different temperatures. The depositions were carried out under high vacuum with a femtosecond-pulsed laser. The focused laser beam is scanned on the surface of a rotating target consisting of the pelletized compounds. The resulting polycrystalline, opaque films were characterized by X-ray powder diffraction, infrared, Raman, and X-ray photoelectron spectroscopy, photoluminescence, SEM, and MALDI-TOF mass spectrometry measurements. The crystal structures and optical/spectroscopic results of the obtained rough films largely match those of the bulk materials.

  11. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  12. Synthesis of amorphous carbon nitride by ion implantation

    Institute of Scientific and Technical Information of China (English)

    ChenZ.; OlofinjanaA.; BellJ

    2001-01-01

    N2+ were implanted into diamondlike carbon (DLC) films in an attempt to synthesizeamorphous carbon nitride. The DLC films were previously deposited on steel substrate by using anion beam sputtering deposition (IBSD) where a single Kaufman type ion gun with argon sourcewas used to sputter a graphite target and simultaneously bombard the growing film. Parallel to theion implantation route, amorphous carbon nitride films were also synthesized by directly using thereactive ion beam sputtering deposition (RIBSD) with nitrogen source to incorporate nitrogen intothe film. The structure and properties of the films were determined by using Raman spectroscopy,XPS and nano-indentation. The implantation of N2+ into a-C films offers a higher hardness thanthat directly synthesized by RIBSD, probably through an increase in sp3/sp2 ratio and in the pro-portion of nitrogen atoms chemically bonding to carbon atoms. The results show that althoughthere are differences in film composition, structure and properties between these two processes,both methods can be used for synthesis of nitrogen-containing amorphous DLC thin films whichsignificantly modify the substrate surface.

  13. Synthesis of ternary metal nitride nanoparticles using mesoporous carbon nitride as reactive template.

    Science.gov (United States)

    Fischer, Anna; Müller, Jens Oliver; Antonietti, Markus; Thomas, Arne

    2008-12-23

    Mesoporous graphitic carbon nitride was used as both a nanoreactor and a reactant for the synthesis of ternary metal nitride nanoparticles. By infiltration of a mixture of two metal precursors into mesoporous carbon nitride, the pores act first as a nanoconfinement, generating amorphous mixed oxide nanoparticles. During heating and decomposition, the carbon nitride second acts as reactant or, more precisely, as a nitrogen source, which converts the preformed mixed oxide nanoparticles into the corresponding nitride (reactive templating). Using this approach, ternary metal nitride particles with diameters smaller 10 nm composed of aluminum gallium nitride (Al-Ga-N) and titanium vanadium nitride (Ti-V-N) were synthesized. Due to the confinement effect of the carbon nitride matrix, the composition of the resulting metal nitride can be easily adjusted by changing the concentration of the preceding precursor solution. Thus, ternary metal nitride nanoparticles with continuously adjustable metal composition can be produced.

  14. Hard carbon nitride and method for preparing same

    Science.gov (United States)

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  15. Preparation and characterization of boron nitride/carbon fiber composite with high specific surface area

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yan; Fan, Mingwen [Wuhan Univ. (China). Key Laboratory for Oral Biomedical Engineering; Yuan, Songdong; Xiong, Kun; Hu, Kunpeng; Luo, Yi [Hubei Univ. of Technology, Wuhan (China). School of Chemistry and Chemical Engineering; Li, Dong [Hubei Univ. of Technology, Wuhan (China). School of Chemistry and Chemical Engineering; Oxford Univ. (United Kingdom). Chemistry Research Lab.

    2014-06-15

    Boron nitride can be used as a good catalyst carrier because of its high thermal conductivity and chemical stability. However, a high specific surface area of boron nitride is still desirable. In this work, a carbon fiber composite coated with boron nitride villous nano-film was prepared, and was also characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and Brunauer-Emmett-Teller analysis. The results indicated that the carbon fibers were covered by uniform villous boron nitride films whose thickness was about 150 - 200 nm. The specific surface area of the boron nitride/carbon fiber composite material was 96 m{sup 2} g{sup -1}, which was markedly improved compared with conventional boron nitride materials. (orig.)

  16. Preparation of graphitic carbon nitride by electrodeposition

    Institute of Scientific and Technical Information of China (English)

    LI Chao; CAO Chuanbao; ZHU Hesun

    2003-01-01

    The CNx thin film was deposited on Si(100) substrate from a saturated acetone solution of cyanuric trichloride and melamine (cyanuric trichloride/melamine=1︰1.5) at room temperature. X-ray diffraction (XRD) results showed that the diffraction peaks in the pattern coincided well with those of graphite-like carbon nitride calculated in the literature. The lattice constants (a=4.79 A, c=6.90 A) for g-C3N4 matched with those of ab initio calculations (a=4.74 A, c=6.72 A) quite well. X-ray photoelectron spectroscopy (XPS) measurements indicated that the elements in the deposited films were mostly of C and N (N/C=0.75), and N (400.00 eV) bonded with C (287.72 eV) in the form of six-member C3N3 ring. The peaks at 800 cm-1, 1310 cm-1 and 1610 cm-1 in the Fourier transform infrared (FTIR) spectrum indicated that triazine ring existed in the product. These results demonstrated that crystalline g-C3N4 was obtained in the CNx film.

  17. Silicon nitride film for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El amrani, A.; Menous, I.; Mahiou, L.; Touati, A.; Lefgoum, A. [Silicon Technology Unit. 2, Boulevard Frantz Fanon, BP 140 Alger-7 Merveilles, 16200 Algiers (Algeria); Tadjine, R. [Advanced Technologies Development Centre, Cite 20 Aout 1656, Baba hassen, Algiers (Algeria)

    2008-10-15

    In this work, our aim was to determine the deposition parameters leading to optimal optical properties of Silicon nitride (SiN) film for photovoltaic application. The deposition was performed in an industrial pulsed direct-PECVD using a gas mixture of NH{sub 3}/SiH{sub 4}. After defining the optimum deposition parameters, we have chemically evaluated the film quality in BOE solution. Plasma removal of the optimized SiN films from multicrystalline 4-in solar cells allows highlighting and estimating the emitter passivation and ARC effects on the solar cell electrical performance. (author)

  18. Photocurrent generation in carbon nitride and carbon nitride/conjugated polymer composites.

    Science.gov (United States)

    Byers, Joshua C; Billon, Florence; Debiemme-Chouvy, Catherine; Deslouis, Claude; Pailleret, Alain; Semenikhin, Oleg A

    2012-09-26

    The semiconductor and photovoltaic properties of carbon nitride (CNx) thin films prepared using a reactive magnetron cathodic sputtering technique were investigated both individually and as composites with an organic conjugated polymer, poly(2,2'-bithiophene) (PBT). The CNx films showed an increasing thickness as the deposition power and/or nitrogen content in the gas mixture increase. At low nitrogen content and low deposition power (25-50 W), the film structure was dominated by the abundance of the graphitic sp(2) regions, whereas at higher nitrogen contents and magnetron power CNx films started to demonstrate semiconductor properties, as evidenced by the occurrence of photoconductivity and the development of a space charge region. However, CNx films alone did not show any reproducible photovoltaic properties. The situation changed, however, when CNx was deposited onto conjugated PBT substrates. In this configuration, CNx was found to function as an acceptor material improving the photocurrent generation both in solution and in solid state photovoltaic devices, with the external quantum efficiencies reaching 1% at high nitrogen contents. The occurrence of the donor-acceptor charge transfer was further evidenced by suppression of the n-doping of the PBT polymer by CNx. Nanoscale atomic force microscopy (AFM) and current-sensing AFM data suggested that CNx may form a bulk heterojunction with PBT.

  19. Elastic Properties of Several Silicon Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X.; Metcalf, T. H.; Wang, Q.; Photiadis, D. M.

    2007-01-01

    We have measured the internal friction (Q{sup -1}) of amorphous silicon nitride (a-SiN{sub x}) films prepared by a variety of methods, including low-pressure chemical-vapor deposition (LPCVD), plasma-enhanced chemical-vapor deposition (PECVD), and hot-wire chemical-vapor deposition (HWCVD) from 0.5 K to room temperature. The measurements are made by depositing the films onto extremely high-Q silicon double paddle oscillator substrates with a resonant frequency of {approx}5500 Hz. We find the elastic properties of these a-SiN{sub x} films resemble those of amorphous silicon (a-Si) films, demonstrating considerable variation which depends on the film growth methods and post deposition annealing. The internal friction for most of the films shows a broad temperature-independent plateau below 30 K, characteristic of amorphous solids. The values of Q{sup -1}, however, vary from film to film in this plateau region by more than one order of magnitude. This has been observed in tetrehedrally covalent-bonded amorphous thin films, like a-Si, a-Ge, and a-C. The PECVD films have the highest Q{sup -1} just like a normal amorphous solid, while LPCVD films have an internal friction more than one order of magnitude lower. All the films show a reduction of Q{sup -1} after annealing at 800 C, even for the LPCVD films which were prepared at 850 C. This can be viewed as a reduction of structural disorder.

  20. Water adsorption on fullerene-like carbon nitride overcoats

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, E. [Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213 (United States)], E-mail: broitman@andrew.cmu.edu; Gueorguiev, G.K.; Furlan, A.; Son, N.T. [IFM, Linkoeping University, SE 581-83 Linkoeping (Sweden); Gellman, A.J. [Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213 (United States); Stafstroem, S.; Hultman, L. [IFM, Linkoeping University, SE 581-83 Linkoeping (Sweden)

    2008-12-01

    Humidity influences the tribological performance of the head-disk interface in magnetic data storage devices. In this work we compare the uptake of water of amorphous carbon nitride (a-CN{sub x}) films, widely used as protective overcoats in computer disk drive systems, with fullerene-like carbon nitride (FL-CN{sub x}) and amorphous carbon (a-C) films. Films with thickness in the range 10-300 nm were deposited on quartz crystal substrates by reactive DC magnetron sputtering. A quartz crystal microbalance placed in a vacuum chamber was used to measure the water adsorption. Electron paramagnetic resonance (EPR) has been used to correlate water adsorption with film microstructure and surface defects (dangling bonds). Measurements indicate that the amount of adsorbed water is highest for the pure a-C films and that the FL-CN{sub x} films adsorbed less than a-CN{sub x}. EPR data correlate the lower water adsorption on FL-CN{sub x} films with a possible lack of dangling bonds on the film surface. To provide additional insight into the atomic structure of defects in the FL-CN{sub x}, a-CN{sub x} and a-C compounds, we performed first-principles calculations within the framework of Density Functional Theory. Emphasis was put on the energy cost for formation of vacancy defects and dangling bonds in relaxed systems. Cohesive energy comparison reveals that the energy cost formation for dangling bonds in different configurations is considerably higher in FL-CN{sub x} than for the amorphous films. These simulations thus confirm the experimental results showing that dangling bonds are much less likely in FL-CN{sub x} than in a-CN{sub x} and a-C films.

  1. Formation and control of stoichiometric hafnium nitride thin films by direct sputtering of hafnium nitride target

    CERN Document Server

    Gotoh, Y; Ishikawa, J; Liao, M Y

    2003-01-01

    Hafnium nitride thin films were prepared by radio-frequency sputter deposition with a hafnium nitride target. Deposition was performed with various rf powers, argon pressures, and substrate temperatures, in order to investigate the influences of these parameters on the film properties, particularly the nitrogen composition. It was found that stoichiometric hafnium nitride films were formed at an argon gas pressure of less than 2 Pa, irrespective of the other deposition parameters within the range investigated. Maintaining the nitrogen composition almost stoichiometric, orientation, stress, and electrical resistivity of the films could be controlled with deposition parameters. (author)

  2. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  3. New nanoforms of carbon and boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Pokropivny, V V [Institute for Problems of Materials Science of National Academy of Sciences of Ukraine (Ukraine); Ivanovskii, A L [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)], e-mail: Ivanovskii@ihim.uran.ru

    2008-10-31

    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  4. New nanoforms of carbon and boron nitride

    Science.gov (United States)

    Pokropivny, V. V.; Ivanovskii, A. L.

    2008-10-01

    Data on new carbon nanostructures including those based on fullerenes, nanotubes as well monolithic diamond-like nanoparticles, nanofibres, various nanocomposites, etc., published in the last decade are generalised. The experimental and theoretical data on their atomic and electronic structures, the nature of chemical bonds and physicochemical properties are discussed. These data are compared with the results obtained in studies of nanoforms of boron nitride, an isoelectronic analogue of carbon. Potential fields of applications of the new nanostructures are considered.

  5. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  6. Recent progress in the synthesis and characterization of amorphous and crystalline carbon nitride coatings

    CERN Document Server

    Widlow, I

    2000-01-01

    This review summarizes our most recent findings in the structure and properties of amorphous and crystalline carbon nitride coatings, synthesized by reactive magnetron sputtering. By careful control of the plasma conditions via proper choice of process parameters such as substrate bias, target power and gas pressure, one can precisely control film structure and properties. With this approach, we were able to produce amorphous carbon nitride films with controlled hardness and surface roughness. In particular, we can synthesize ultrathin (1 nm thick) amorphous carbon nitride films to be sufficiently dense and uniform that they provide adequate corrosion protection for hard disk applications. We demonstrated the strong correlation between ZrN (111) texture and hardness in CN sub x /ZrN superlattice coatings. Raman spectroscopy and near-edge X-ray absorption show the predominance of sp sup 3 -bonded carbon in these superlattice coatings.

  7. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  8. Vertical III-nitride thin-film power diode

    Energy Technology Data Exchange (ETDEWEB)

    Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

    2017-03-14

    A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

  9. Study on Titanium Nitride Film Modified for Intraocular Lens

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Objective:To study the characteristics of the intraocular lens using ion beam sputtering depositing titanium nitride thin film on the intraocular lens(IOLs).Methods:To deposite titanium nitride thin film on the top of intraocular lens by ion beam sputtering depositing.We analyzed the surface morphology of intraocular lens through SEM and AFM.We detected intraocular lens resolution through the measurement of intraocular lens.Biocompatibility of intraocular lens is preliminary evaluated in this test.Results:T...

  10. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films

    Science.gov (United States)

    2014-01-09

    Synthesis 1. Diborane- ammonia (B2H6-NH3- gases): Early results with these precursors were published in 2012. 5 Briefly, LPCVD growth of h-BN in a hot-wall...Approved for public release; distribution is unlimited. Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films. The views, opinions and...1 ABSTRACT Number of Papers published in peer-reviewed journals: Synthesis and Characterization of Hexagonal Boron Nitride (h-BN) Films. Report Title

  11. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  12. Stress in and texture of PVD deposited metal nitride films

    NARCIS (Netherlands)

    Machunze, R.

    2010-01-01

    Thin metal nitride films deposited by Physical Vapor Deposition (PVD) are used amongst many other applications as wear protective coatings in tool industry or as diffusion barriers in integrated circuit technology. Typically these films exhibit a residual in-plane stress when deposited onto rigid su

  13. Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method

    Institute of Scientific and Technical Information of China (English)

    辛火平; 林成鲁; 许华平; 邹世昌; 石晓红; 吴兴龙; 朱宏; P.L.FHemment

    1996-01-01

    Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found.

  14. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  15. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  16. Fabrication of hexagonal gallium nitride films on silicon (111) substrates

    Institute of Scientific and Technical Information of China (English)

    YANG Li; XUE Chengshan; WANG Cuimei; LI Huaixiang; REN Yuwen

    2003-01-01

    Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111 ) substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM),and transmission electron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.

  17. Crystallographic phases and magnetic properties of iron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guo-Ke [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Liu, Yan; Zhao, Rui-Bin [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Shen, Jun-Jie [Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043 (China); Wang, Shang; Shan, Pu-Jia; Zhen, Cong-Mian [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China); Hou, Deng-Lu, E-mail: houdenglu@mail.hebtu.edu.cn [Department of Physics, Hebei Advanced Thin Films Laboratory, Hebei Normal University, Shijiazhuang 050024 (China)

    2015-08-31

    Iron nitride films, including single phase films of α-FeN (expanded bcc Fe), γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N (0 ≤ x ≤ 1), and γ″-FeN, were sputtered onto AlN buffered glass substrates. It was found possible to control the phases in the films merely by changing the nitrogen partial pressure during deposition. The magnetization decreased with increased nitrogen concentration and dropped to zero when the N:Fe ratio was above 0.5. The experimental results, along with spin polarized band calculations, have been used to discuss and analyze the magnetic properties of iron nitrides. It has been demonstrated that in addition to influencing the lattice constant of the various iron nitrides, the nearest N atoms have a significant influence on the exchange splitting of the Fe atoms. Due to the hybridization of Fe-3d and N-2p states, the magnetic moment of Fe atoms decreases with an increase in the number of nearest neighbor nitrogen atoms. - Highlights: • Single phase γ′-Fe{sub 4}N, ε-Fe{sub 3−x}N, and γ″-FeN films were obtained using dc sputtering. • The phases in iron nitride films can be controlled by the nitrogen partial pressure. • The nearest N neighbors have a significant influence on the exchange splitting of Fe.

  18. Carbon nitride frameworks and dense crystalline polymorphs

    Science.gov (United States)

    Pickard, Chris J.; Salamat, Ashkan; Bojdys, Michael J.; Needs, Richard J.; McMillan, Paul F.

    2016-09-01

    We used ab initio random structure searching (AIRSS) to investigate polymorphism in C3N4 carbon nitride as a function of pressure. Our calculations reveal new framework structures, including a particularly stable chiral polymorph of space group P 43212 containing mixed s p2 and s p3 bonding, that we have produced experimentally and recovered to ambient conditions. As pressure is increased a sequence of structures with fully s p3 -bonded C atoms and three-fold-coordinated N atoms is predicted, culminating in a dense P n m a phase above 250 GPa. Beyond 650 GPa we find that C3N4 becomes unstable to decomposition into diamond and pyrite-structured CN2.

  19. Room temperature synthesis of biodiesel using sulfonated graphitic carbon nitride

    Science.gov (United States)

    Baig, R. B. Nasir; Verma, Sanny; Nadagouda, Mallikarjuna N.; Varma, Rajender S.

    2016-12-01

    Sulfonation of graphitic carbon nitride (g-CN) affords a polar and strongly acidic catalyst, Sg-CN, which displays unprecedented reactivity and selectivity in biodiesel synthesis and esterification reactions at room temperature.

  20. Room temperature synthesis of biodiesel using sulfonated graphitic carbon nitride

    Science.gov (United States)

    Sulfonation of graphitic carbon nitride (g-CN) affords a polar and strongly acidic catalyst, Sg-CN, which displays unprecedented reactivity and selectivity in biodiesel synthesis and esterification reactions at room temperature.

  1. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Energy Technology Data Exchange (ETDEWEB)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

  2. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  3. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

    Science.gov (United States)

    2013-02-01

    like HEMTs . A nanolayer of AlGaN over GaN provides extra 2DEG charge density because of the piezoelectric effect of the AlGaN layer. The higher...Control of Defects in Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

  4. Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.

    Science.gov (United States)

    Yang, Yi; Ling, Yichuan; Wang, Gongming; Lu, Xihong; Tong, Yexiang; Li, Yat

    2013-03-07

    We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

  5. Unintentional carbide formation evidenced during high-vacuum magnetron sputtering of transition metal nitride thin films

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.

    2016-11-01

    Carbide signatures are ubiquitous in the surface analyses of industrially sputter-deposited transition metal nitride thin films grown with carbon-less source materials in typical high-vacuum systems. We use high-energy-resolution photoelectron spectroscopy to reveal details of carbon temporal chemical state evolution, from carbide formed during film growth to adventitious carbon adsorbed upon contact with air. Using in-situ grown Al capping layers that protect the as-deposited transition metal nitride surfaces from oxidation, it is shown that the carbide forms during film growth rather than as a result of post deposition atmosphere exposure. The XPS signature of carbides is masked by the presence of adventitious carbon contamination, appearing as soon as samples are exposed to atmosphere, and eventually disappears after one week-long storage in lab atmosphere. The concentration of carbon assigned to carbide species varies from 0.28 at% for ZrN sample, to 0.25 and 0.11 at% for TiN and HfN, respectively. These findings are relevant for numerous applications, as unintentionally formed impurity phases may dramatically alter catalytic activity, charge transport and mechanical properties by offsetting the onset of thermally-induced phase transitions. Therefore, the chemical state of C impurities in PVD-grown films should be carefully investigated.

  6. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

    Energy Technology Data Exchange (ETDEWEB)

    Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

    2016-09-15

    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

  7. Polymeric photocatalysts based on graphitic carbon nitride.

    Science.gov (United States)

    Cao, Shaowen; Low, Jingxiang; Yu, Jiaguo; Jaroniec, Mietek

    2015-04-01

    Semiconductor-based photocatalysis is considered to be an attractive way for solving the worldwide energy shortage and environmental pollution issues. Since the pioneering work in 2009 on graphitic carbon nitride (g-C3N4) for visible-light photocatalytic water splitting, g-C3N4 -based photocatalysis has become a very hot research topic. This review summarizes the recent progress regarding the design and preparation of g-C3N4 -based photocatalysts, including the fabrication and nanostructure design of pristine g-C3N4 , bandgap engineering through atomic-level doping and molecular-level modification, and the preparation of g-C3N4 -based semiconductor composites. Also, the photo-catalytic applications of g-C3N4 -based photocatalysts in the fields of water splitting, CO2 reduction, pollutant degradation, organic syntheses, and bacterial disinfection are reviewed, with emphasis on photocatalysis promoted by carbon materials, non-noble-metal cocatalysts, and Z-scheme heterojunctions. Finally, the concluding remarks are presented and some perspectives regarding the future development of g-C3N4 -based photocatalysts are highlighted.

  8. Structure and Thermal Stability of Copper Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Guangan Zhang

    2013-01-01

    Full Text Available Copper nitride (Cu3N thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.

  9. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  10. Graphitic carbon nitride based nanocomposites: a review.

    Science.gov (United States)

    Zhao, Zaiwang; Sun, Yanjuan; Dong, Fan

    2015-01-07

    Graphitic carbon nitride (g-C(3)N(4)), as an intriguing earth-abundant visible light photocatalyst, possesses a unique two-dimensional structure, excellent chemical stability and tunable electronic structure. Pure g-C(3)N(4) suffers from rapid recombination of photo-generated electron-hole pairs resulting in low photocatalytic activity. Because of the unique electronic structure, the g-C(3)N(4) could act as an eminent candidate for coupling with various functional materials to enhance the performance. According to the discrepancies in the photocatalytic mechanism and process, six primary systems of g-C(3)N(4)-based nanocomposites can be classified and summarized: namely, the g-C(3)N(4) based metal-free heterojunction, the g-C(3)N(4)/single metal oxide (metal sulfide) heterojunction, g-C(3)N(4)/composite oxide, the g-C(3)N(4)/halide heterojunction, g-C(3)N(4)/noble metal heterostructures, and the g-C(3)N(4) based complex system. Apart from the depiction of the fabrication methods, heterojunction structure and multifunctional application of the g-C(3)N(4)-based nanocomposites, we emphasize and elaborate on the underlying mechanisms in the photocatalytic activity enhancement of g-C(3)N(4)-based nanocomposites. The unique functions of the p-n junction (semiconductor/semiconductor heterostructures), the Schottky junction (metal/semiconductor heterostructures), the surface plasmon resonance (SPR) effect, photosensitization, superconductivity, etc. are utilized in the photocatalytic processes. Furthermore, the enhanced performance of g-C(3)N(4)-based nanocomposites has been widely employed in environmental and energetic applications such as photocatalytic degradation of pollutants, photocatalytic hydrogen generation, carbon dioxide reduction, disinfection, and supercapacitors. This critical review ends with a summary and some perspectives on the challenges and new directions in exploring g-C(3)N(4)-based advanced nanomaterials.

  11. Microstructure and conductivity of hydrogenated carbon nitride film%掺氮类金刚石薄膜的微观结构和电导特性

    Institute of Scientific and Technical Information of China (English)

    张伟丽; 夏义本; 居建华; 王林军; 方志军

    2001-01-01

    Microstructures of nitrogen incorporated hydrogenated carbon (a-C:H:N) films deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) method were characterized by Atomic Force Microscopes (AFM), Auger Electron Spectra (AES), Infrared (IR) and Micro- Raman spectra. Results indicate that there are some nanometer particles existed in the films. The con- tent of nitrogen in the films increases with the ratio of N2 to CH4 in the gas mixture. The large amount of nitrogen in the films takes the form of C-N and N-H, small amount of that takes the form of C≡ N. The influence of thermal annealing on the conductivity of a-C:H:N films was also investigated .%用射频等离子体化学气相沉积法(RFCVD)和CH4、N2与Ar组成的混合气体制备掺氮类 金刚石薄膜(a-C:H:N)。用原子力显微镜(AFM),俄歇电子能谱(AES),红外光谱(IR)以及显 微拉曼谱(Micro-Raman)对a-C:H:N薄膜的表面形貌、组分和微观结构进行了表征。实验结 果表明,薄膜中有纳米量级的颗粒存在,而且随反应气体中N2与CH4比值的增大,薄膜中氮元 素的含量也随之增大,并主要以C-N键和N-H键形式存在,少量以C≡N键形式存在。还研 究了热退火对a-C:H:N薄膜的电导率的影响。

  12. Reactive pulsed laser deposition of gold nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P. [University of Salento, Department of Physics, 73100 Lecce (Italy); Fernandez, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Leggieri, G. [University of Salento, Department of Physics, 73100 Lecce (Italy)]. E-mail: leggieri@le.infn.it; Luches, A. [University of Salento, Department of Physics, 73100 Lecce (Italy); Martino, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Romano, F. [University of Salento, Department of Physics, 73100 Lecce (Italy); Tunno, T. [University of Salento, Department of Physics, 73100 Lecce (Italy); Valerini, D. [University of Salento, Department of Physics, 73100 Lecce (Italy); Verdyan, A. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Soifer, Y.M. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Azoulay, J. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Meda, L. [IGD Polimeri Europa S.p.A, Novara (Italy)

    2007-07-31

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N{sub 2} or NH{sub 3}). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 deg. C. Film resistivity was measured using a four-point probe and resulted in the (4-20) x 10{sup -8} {omega} m range, depending on the ambient pressure, to be compared with the value 2.6 x 10{sup -8} {omega} m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N{sub 2} phase. All these measurements point to the formation of the gold nitride phase.

  13. Reactive pulsed laser deposition of gold nitride thin films

    Science.gov (United States)

    Caricato, A. P.; Fernàndez, M.; Leggieri, G.; Luches, A.; Martino, M.; Romano, F.; Tunno, T.; Valerini, D.; Verdyan, A.; Soifer, Y. M.; Azoulay, J.; Meda, L.

    2007-07-01

    We report on the growth and characterization of gold nitride thin films on Si substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N 2 or NH 3). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10 -8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10 -8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N 2 phase. All these measurements point to the formation of the gold nitride phase.

  14. DFT Studies on Electronic Structures of Boro-Nitride-Carbon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    YAN Ming; HUANG Chun-Hui

    2005-01-01

    In this paper, the configurations of Boro-Nitride-Carbon nanotubes with BNC2 composition were optimized by ROHF method. According to the density functional theory, the electronic structures of Boro-Nitride-Carbon nanotubes were calculated by DFT/ROB3LYP method. By analyzing the energy gap, density of electronic state and bonding maps of atoms, the conductive properties of Boro-Nitride-Carbon nanotubes were obtained, and compared with those of carbon nanotubes and other Boro-Nitride nanotubes.

  15. Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C3N4)O

    Science.gov (United States)

    Kharlamov, Alexey; Bondarenko, Marina; Kharlamova, Ganna; Fomenko, Veniamin

    2016-09-01

    For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C3N4)O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C3N4. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets.

  16. Magnetron sputter deposited tantalum and tantalum nitride thin films: An analysis of phase, hardness and composition

    Energy Technology Data Exchange (ETDEWEB)

    Bernoulli, D. [Laboratory for Nanometallurgy, Department of Materials, ETH-Zurich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich (Switzerland); Müller, U. [EMPA, Swiss Federal Laboratories for Material Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Schwarzenberger, M. [Laboratory for Nanometallurgy, Department of Materials, ETH-Zurich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich (Switzerland); Hauert, R. [EMPA, Swiss Federal Laboratories for Material Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials, ETH-Zurich, Wolfgang-Pauli-Strasse 10, CH-8093 Zürich (Switzerland)

    2013-12-02

    Tantalum (Ta) and tantalum nitride thin films are highly important as diffusion barriers and adhesion layers in microelectronics and hard coatings for cutting tools. In this study, the effect of the underlying substrate on the phase formation of Ta and the influence of a changing N{sub 2}/Ar flow ratio on hardness, phase and composition of reactively formed tantalum nitride have been investigated. Ta is DC sputter deposited and forms β-Ta on amorphous diamond-like carbon and on the amorphous natural oxide layers of Ti and Si(100) while a 15 nm TaN seed layer results in the formation of α-Ta. The chemical composition of the topmost layers of a substrate influences the formation of α- and β-Ta. With increasing N{sub 2}/Ar flow ratios a transition from amorphous Ta-rich tantalum nitride over face-centered cubic tantalum nitride (fcc-TaN) to (100) textured fcc-TaN at flow ratios above 45% is observed. The hardness of the tantalum nitride thin film reaches a maximum at a flow ratio of 45%, followed by a decrease in hardness for higher N{sub 2}/Ar flow ratios. The increase in hardness is associated with a decrease in grain size and shows a stronger correlation for a Meyers and Ashworth relationship than for a Hall–Petch relationship. - Highlights: • Chemical composition of the substrate influences the phase of deposited Ta. • FCC-TaN seed layer leads to α-Ta on the natural oxide layers of Ti and Si(100). • Meyers and Ashworth relationship correlates stronger than Hall–Petch relationship.

  17. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; PROVENCIO,PAULA P.; OVERMYER,DONALD L.; SIMPSON,REGINA L.; MARTINEZ-MIRANDA,L.J.

    2000-01-27

    Modest thermal annealing to 600 C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5--10%. The authors report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approximately} 15% due to the development of the nanocomposite structure.

  18. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Martinez-Miranda, L. J. [Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)

    2000-05-22

    Modest thermal annealing to 600 degree sign C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5%-10%. We report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approx}15% due to the development of the nanocomposite structure. (c) 2000 American Institute of Physics.

  19. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  20. Triggering the atomic layers control of hexagonal boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yangxi [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Zhang, Changrui, E-mail: crzhang12@gmail.com [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Li, Bin [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Jiang, Da; Ding, Guqiao; Wang, Haomin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Xie, Xiaoming, E-mail: xmxie@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

    2014-09-15

    Highlights: • Thickness of h-BN films can be controlled from double atomic layers to over ten atomic layers by adjusting the CVD parameters, quite different from the reported thickness control of up to tens of nanometers. (The interlayer distance of h-BN is 0.333 nm.) • Growth mechanisms of h-BN are discussed, especially for bilayer h-BN films. • Both epitaxial growth and diffusion-segregation process are involved in the synthesis of bilayer h-BN films. - Abstract: In this work, we report the successful synthesis of large scale hexagonal boron nitride films with controllable atomic layers. The films are grown on thin nickel foils via ambient pressure chemical vapor deposition with borazine as the precursor. The atomic layers of h-BN films can be controlled in a narrow range by adjusting growth time and the cooling rates. Transmission electron microscope results shows the h-BN films exhibit high uniformity and good crystalline. X-ray photoelectron spectroscopy shows the B/N elemental ratio is about 1.01. The h-BN films exhibit a pronounced deep ultraviolet absorption at 203.0 nm with a large optical band gap of 6.02 ± 0.03 eV. The results suggest potential applications of h-BN films in deep ultraviolet and dielectric materials. Growth mechanisms of h-BN films with thickness control are discussed, especially when the synthesized h-BN films after a higher cooling rate show an in-plane rotation angle between bilayers. Both epitaxial growth and diffusion-segregation process are involved in the synthesis of bilayer h-BN films.

  1. Spectroscopic ellipsometry characterization of thin-film silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jellison, G.E. Jr.; Modine, F.A. [Oak Ridge National Lab., TN (United States); Doshi, P.; Rohatgi, A. [Georiga Inst. of Technology, Atlanta, GA (United States)

    1997-05-01

    We have measured and analyzed the optical characteristics of a series of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition on silicon substrates for photovoltaic applications. Spectroscopic ellipsometry measurements were made by using a two-channel spectroscopic polarization modulator ellipsometer that measures N, S, and C data simultaneously. The data were fit to a model consisting of air / roughness / SiN / crystalline silicon. The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% SiN, 50% voids. The optical functions of the SiN film were parameterized using a model by Jellison and Modine. All the {Chi}{sup 2} are near 1, demonstrating that this model works extremely well for all SiN films. The measured dielectric functions were used to make optimized SiN antireflection coatings for crystalline silicon solar cells.

  2. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  3. Structure, Mechanics and Synthesis of Nanoscale Carbon and Boron Nitride

    Science.gov (United States)

    Rinaldo, Steven G.

    This thesis is divided into two parts. In Part I, we examine the properties of thin sheets of carbon and boron nitride. We begin with an introduction to the theory of elastic sheets, where the stretching and bending modes are considered in detail. The coupling between stretching and bending modes is thought to play a crucial role in the thermodynamic stability of atomically-thin 2D sheets such as graphene. In Chapter 2, we begin by looking at the fabrication of suspended, atomically thin sheets of graphene. We then study their mechanical resonances which are read via an optical transduction technique. The frequency of the resonators was found to depend on their temperature, as was their quality factor. We conclude by offering some interpretations of the data in terms of the stretching and bending modes of graphene. In Chapter 3, we look briefly at the fabrication of thin sheets of carbon and boron nitride nanotubes. We examine the structure of the sheets using transmission and scanning electron microscopy (TEM and SEM, respectively). We then show a technique by which one can make sheets suspended over a trench with adjustable supports. Finally, DC measurements of the resistivity of the sheets in the temperature range 600 -- 1400 C are presented. In Chapter 4, we study the folding of few-layer graphene oxide, graphene and boron nitride into 3D aerogel monoliths. The properties of graphene oxide are first considered, after which the structure of graphene and boron nitride aerogels is examined using TEM and SEM. Some models for their structure are proposed. In Part II, we look at synthesis techniques for boron nitride (BN). In Chapter 5, we study the conversion of carbon structures of boron nitride via the application of carbothermal reduction of boron oxide followed by nitridation. We apply the conversion to a wide variety of morphologies, including aerogels, carbon fibers and nanotubes, and highly oriented pyrolytic graphite. In the latter chapters, we look at the

  4. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).

  5. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Cloud, Andrew N.; Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 201 Materials Science and Engineering Building, 1304 W. Green St., Urbana, Illinois 61801 (United States); Davis, Luke M.; Girolami, Gregory S., E-mail: girolami@scs.illinois.edu [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 S. Mathews Ave., Urbana, Illinois 61801 (United States)

    2014-03-15

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu){sub 2}]{sub 2} precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities.

  6. Thick film fabrication of aluminum nitride microcircuits. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  7. Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martin-Ramos, Pablo, E-mail: pablomartinramos@gmail.com [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Correa-Guimaraes, Adriana, E-mail: acg@iaf.uva.es [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martin-Gil, Jesus, E-mail: jesusmartingil@gmail.com [Laboratorio de Tecnologias del Medio Ambiente, Departamento de Ingenieria Agricola y Forestal, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

    2011-11-01

    Highlights: {yields} Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. {yields} The building blocks of carbon nitrides are heptazine nuclei. {yields} Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

  8. Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

    DEFF Research Database (Denmark)

    2000-01-01

    Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

  9. Pulsed laser deposition of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ufuktepe, Yüksel, E-mail: ufuk@cu.edu.tr [Department of Physics, University of Cukurova, 01330 Adana (Turkey); Myneni, Ganapati, E-mail: rao@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  10. Low temperature aluminum nitride thin films for sensory applications

    Science.gov (United States)

    Yarar, E.; Hrkac, V.; Zamponi, C.; Piorra, A.; Kienle, L.; Quandt, E.

    2016-07-01

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ɛr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  11. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  12. Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

    OpenAIRE

    Weifeng LI; Yang, Yanmei; Zhou, Hongcai; Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be...

  13. Optimized transparent and heat reflecting oxide and nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Howson, R.P.; Ridge, M.I.; Suzuki, K.

    1984-11-01

    Films of indium oxide and indium oxide doped with tin have been produced by reactive planar magnetron sputtering of the pure metal and the alloy and from two metal sources simultaneously. In each case the oxygen partial pressure was controlled to give the higher sheet resistance in the oxide film which was deposited onto a plastic sheet transferred over a drum at ambient temperature. Films prepared under these conditions with the best properties for heat reflecting and visible transparent filters were found to be the oxide of the pure metal. A radio frequency discharge used in conjunction with the magnetron allowed the operating pressure to be considerably reduced, which allowed the preparation of titanium nitride films from a titanium metal target and the construction of simple metal and dielectric-metal-dielectric filters, which match theoretical predictions. A sandwich filter could be made from one titanium target by varying the active gas between oxygen and nitrogen to give a structure of: TiO/sub 2/-TiN-TiO/sub 2/. (A.V.)

  14. Optimized Transparent And Heat Reflecting Oxide And Nitride Films

    Science.gov (United States)

    Howson, Ronald P.; Ridge, Martin I.; Suzuki, Koichi

    1983-12-01

    Films of indium oxide and indium oxide doped with tin have been produced by reactive planar magnetron sputtering of the pure metal and the alloy and from two metal sources simultaneously. In each case the oxygen partial pressure was controlled to give the highest sheet resistance in the oxide film which was deposited onto a plastic sheet transferred over a drum at ambient temperature. Films prepared under these conditions with the best properties for heat reflecting and visible transparent filters were found to be the oxide of the pure metal. A radio frequency discharge used in conjunction with the magnetron allowed the operating pressure to be considerably reduced, which allowed the preparation of titanium nitride films from a titanium metal target and the construction of simple metal and dielectric-metal-dielectric filters, which match theoretical predictions. A sandwich filter could be made from one titanium target by varying the active gas between oxygen and nitrogen to give a structure of: TiO2 - TiN - Ti02.

  15. Spotting 2D atomic layers on aluminum nitride thin films.

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  16. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

    2011-10-15

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  17. Mesoporous carbon nitride-tungsten oxide composites for enhanced photocatalytic hydrogen evolution.

    Science.gov (United States)

    Kailasam, Kamalakannan; Fischer, Anna; Zhang, Guigang; Zhang, Jinshui; Schwarze, Michael; Schröder, Marc; Wang, Xinchen; Schomäcker, Reinhard; Thomas, Arne

    2015-04-24

    Composites of mesoporous polymeric carbon nitride and tungsten(VI) oxide show very high photocatalytic activity for the evolution of hydrogen from water under visible light and in the presence of sacrificial electron donors. Already addition of very small amounts of WO3 yields up to a twofold increase in the efficiency when compared to bulk carbon nitrides and their composites and more notably even to the best reported mesoporous carbon nitride-based photocatalytic materials. The higher activity can be attributed to the high surface area and synergetic effect of the carbon nitrides and the WO3 resulting in improved charge separation through a photocatalytic solid-state Z-scheme mechanism.

  18. UHV plasma jet system for deposition of magnetic nitride nanocomposite films with GHz applications

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, F; Lancok, A [Institute of Physics, Academy of Sciences, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Repa, P; Peksa, L; Gronych, T; Vejpravova, J P [Faculty of Math and Physics, Charles University in Prague, V Holesovickach 2, CZ-18000 Prague 8 (Czech Republic); Hedbavny, P [VAKUUM PRAHA, V Holesovickach 2, CZ-18000 Prague 8 (Czech Republic); Schaefer, R [Leibniz Institute IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Seemann, K M [Forschungszentrum Karlsruhe, Eggenstein, D-76021 Karlsruhe (Germany)], E-mail: fendrych@fzu.cz

    2008-03-15

    A method of preparation of extremely pure magnetic thin films, especially magnetic nitride nanocomposites for GHz aplications was searched. The plasma-jet method was chosen for its advantages at magnetic materials deposition. Sources of impurities deteriorating the quality of the films were analysed. Based on the assumption that the achievable purity is limited mainly by the conditions at the deposition, an experimental UHV apparatus with the plasma-jet was designed. A number of magnetic thin films from various materials including nitride nanocomposite films was prepared already in this apparatus at UHV conditions. Their magnetic properties are far better than those of the films prepared in a high vacuum apparatus.

  19. Melon: A carbon-nitride analog to graphene

    Science.gov (United States)

    Therrien, Joel; Li, Yancen; Schmidt, Daniel

    2012-02-01

    Although graphene remains the premier 2-D material, many others have been shown to exist. A close analog to graphene would be a two-dimensional sheet composed of carbon and nitrogen, known as melon. Bulk melon, also known as graphitic carbon-nitride, has been successfully synthesized and shown to be an organic semiconductor with a band-gap around 2.7 eV. We report on the successful synthesis of single layer and few layer melon. The physical and electrical characteristics of this close cousin to graphene will be presented along with the synthesis method.

  20. Tribological properties of sputtered tungsten and tungsten nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Wong; K.M.; ShenY.G.; Wong; P.L.

    2001-01-01

    The surface roughness, hardness and tribological properties of tungsten (W) and tung-sten nitride (WNx) thin films prepared by dc magnetron sputtering and reactive magnetron sputter-ing in Ar-N2 gas mixtures have been studied using atomic force microscopy (AFM), nanoindenta-tion measurements and ball-on-disc wear testing. A pronounced surface roughness was observedonly for films under compressive strains. The surface was flat under tension but rough under com-pression. Similar hardness with value about 20 GPa were observed in the W and WNx (x=0.3)films. This is thought to be due to the fact the grains are restricted to a very small size in the coat-ings. The higher coefficients of friction (0.4 for W and 0.9 for WN0.3) suggest that WN0.3 is not theoptimum phase. Finally, discussions are made with tribological test results.

  1. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  2. Effect of Nitridation on Morphology, Structural Properties and Stress of A1N Films

    Institute of Scientific and Technical Information of China (English)

    HU Wei-Guo; JIAO Chun-Mei; WEI Hong-Yuan; ZHANG Pan-Feng; KANG Wing-Ting; ZHANG Ri-Qing; LIU Xiang-Lin

    2008-01-01

    @@ We investigate effects of nitridation on A1N morphology, structural properties and stress.It is found that 3 min nitridation can prominently improve A1N crystal structure, and slightly smooth the surface morphology.However, 10min nitridation degrades out-of-plane crystal structure and surface morphology instead.Additionally, 3-min nitridation introduces more tensile stress (1.5 GPa) in A1N films, which can be attributed to the weaker islands 2D coalescent.Nitridation for 10 rain can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress.Thus, the stress in A1N with 10 min nitridation decreases to -0.2 GPa compressive stress.

  3. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  4. Microstructure of titanium nitride thin films controlled by ion bombardment in a magnetron-sputtering device

    Energy Technology Data Exchange (ETDEWEB)

    Cerny, R. (Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni); Kuzel, R. Jr. (Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni); Valvoda, V. (Karlova Univ., Prague (Czech Republic). Fakulta Matematicko-Fyzikalni); Kadlec, S. (Czechoslovak Academy of Sciences, Prague (Czechoslovakia). Inst. of Physics); Musil, J. (Czechoslovak Academy of Sciences, Prague (Czechoslovakia). Inst. of Physics)

    1994-05-01

    The structure of titanium nitride thin films deposited by unbalanced magnetron sputtering on high chromium steel substrates was studied by X-ray diffraction. In order to characterize relations between the microstructure of sputtered TiN films and the deposition conditions, the parameter E[sub p] was introduced as the average energy transmitted from bombarding particles (ions, electrons, neutrals, photons) to one condensing particle of the film. A transition from a porous to a compact microstructure was found with increasing E[sub p]. The possible inhomogeneity of titanium nitride films is discussed. (orig.)

  5. The influence of substrate temperature on the tribo- mechanical properties of chromium nitride thin films

    Science.gov (United States)

    Merie, V. V.; Negrea, G.; Modi, E.

    2016-08-01

    Different nitrides such as titanium nitride, chromium nitride and so on are used in a widespread range of applications such as cutting tools, medical implants, and microelectromechanical devices and all that due to their mechanical, physical and chemical properties. The aim of this study is to obtain chromium nitride thin films and to characterize them by atomic force microscopy investigations. The chromium nitride thin films were deposited by reactive magnetron sputtering on silicon substrates. During the deposition process, the discharge current, the argon and nitrogen flows, the pressure inside the chamber and the deposition time were kept constant. A chromium target with a purity of 99.95 % was used. Some of the films were deposited after a chromium buffer layer was previously deposited on the silicon substrate. The deposition was carried out when substrate temperature was at room temperature, at 300 and 500°C respectively. Once the films were deposited, atomic force microscopy investigations were performed in order to emphasize the influence of the substrate temperature on the topographical, mechanical and tribological characteristics. The results pointed out an important influence of the substrate temperature on topographical, mechanical and tribological properties of the investigated chromium nitride thin films.

  6. Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

    KAUST Repository

    Alhajri, Nawal Saad

    2016-02-22

    Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

  7. Nanoporous Carbon Nitride: A High Efficient Filter for Seawater Desalination

    CERN Document Server

    Li, Weifeng; Zhou, Hongcai; Zhang, Xiaoming; Zhao, Mingwen

    2015-01-01

    The low efficiency of commercially-used reverse osmosis (RO) membranes has been the main obstacle in seawater desalination application. Here, we report the auspicious performance, through molecular dynamics simulations, of a seawater desalination filter based on the recently-synthesized graphene-like carbon nitride (g-C2N) [Nat. Commun., 2015, 6, 6486]. Taking advantage of the inherent nanopores and excellent mechanical properties of g-C2N filter, highly efficient seawater desalination can be achieved by modulating the nanopores under tensile strain. The water permeability can be improved by two orders of magnitude compared to RO membranes, which offers a promising approach to the global water shortage solution.

  8. Elaboration of nitride thin films by reactive sputtering

    Directory of Open Access Journals (Sweden)

    Pierre Yves Jouan

    2006-06-01

    Full Text Available The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100 deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002 orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%. A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100 texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.O objetivo desse artigo, em um primeiro momento, é uma melhor compreensão da vaporização em um ambiente magnetron reativo DC e as suas conseqüências, tais como o efeito da histeresis e o processo de instabilidade. A segunda parte desse trabalho está dedicada a um estudo de caso: o nitreto de alumínio. Filmes finos de nitreto de alumínio foram depositados por vaporização triodo reativa. Estudamos o efeito dos teores de nitrogênio, na descarga, e da voltagem RF(bias, no crescimento dos filmes de AlN em Si(100 depositados por vaporização triodo. A estequiometria e a orientação cristalina dos filmes de AlN foram caracterizadas por espectroscopia infravermelha em transformada de Fourier

  9. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  10. Interacting Carbon Nitride and Titanium Carbide Nanosheets for High-Performance Oxygen Evolution.

    Science.gov (United States)

    Ma, Tian Yi; Cao, Jian Liang; Jaroniec, Mietek; Qiao, Shi Zhang

    2016-01-18

    Free-standing flexible films, constructed from two-dimensional graphitic carbon nitride and titanium carbide (with MXene phase) nanosheets, display outstanding activity and stability in catalyzing the oxygen-evolution reaction in alkaline aqueous system, which originates from the Ti-N(x) motifs acting as electroactive sites, and the hierarchically porous structure with highly hydrophilic surface. With this excellent electrocatalytic ability, comparable to that of the state-of-the-art precious-/transition-metal catalysts and superior to that of most free-standing films reported to date, they are directly used as efficient cathodes in rechargeable zinc-air batteries. Our findings reveal that the rational interaction between different two-dimensional materials can remarkably promote the oxygen electrochemistry, thus boosting the entire clean energy system.

  11. Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

    Science.gov (United States)

    Linzen, S.; Ziegler, M.; Astafiev, O. V.; Schmelz, M.; Hübner, U.; Diegel, M.; Il’ichev, E.; Meyer, H.-G.

    2017-03-01

    We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition (PEALD) process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films was minimised and a film structure consisting of mainly polycrystalline niobium nitride with a small fraction of amorphous niobium oxide and niobium oxo-nitrides were formed. For this composition a critical temperature of 13.8 K and critical current densities of 7 × 106 A cm–2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic δ-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor–insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. The perfect thickness control and film homogeneity of the PEALD growth make such films extremely promising candidates for developing novel devices on the coherent quantum phase slip effect.

  12. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  13. Convert Graphene Sheets to Boron Nitride and Boron Nitride-Carbon Sheets via a Carbon-Substitution-Reaction

    Energy Technology Data Exchange (ETDEWEB)

    Han, W.; Yu, H.-G.; Liu. Z.

    2011-05-16

    Here we discuss our synthesis of highly crystalline pure boron nitride (BN) and BN-carbon (BN-C) sheets by using graphene sheets as templates via a carbon-substitution reaction. Typically, these sheets are several micrometers wide and have a few layers. The composition ratios of BN-C sheets can be controlled by the post-treatment (remove carbon by oxidation) temperature. We also observed pure BN and BN-C nanoribbons. We characterized the BN-C sheets via Raman spectroscopy and density functional theory calculations. The results reveal that BN-C sheets with an armchair C-BN chain, and embedded C{sub 2} or C{sub 6} units in BN-dominated regions energetically are the most favorable.

  14. Multipactor suppressing titanium nitride thin films analyzed through XPS and AES

    Energy Technology Data Exchange (ETDEWEB)

    Castro C, M.; Durrer, W.; Lopez, J. A.; Pinales, L. A. [Physics Department, University of Texas, El Paso TX 79968 (United States); Encinas B, C.; Moller, D. [Centro de Investigacion en Materiales Avanzados S. C., Miguel de Cervantes Saavedra 120, Complejo Industrial Chihuahua, 31109 Chihuahua (Mexico)

    2008-02-15

    Cathodic-magnetron-deposited titanium nitride films were grown on anodized aluminum substrates and studied via AES and XPS spectroscopies to determine their depth-dependence composition. As it is well known, the native oxide grown on aluminum does not make the substrate impervious to radio frequency damage, and typically a thin film coating is needed to suppress substrate damage. In this article we present the profile composition of titanium nitride films, used as a protective coating for aluminum, that underwent prior conditioning through anodization, observed after successive sputtering stages. (Author)

  15. Functional nanostructured titanium nitride films obtained by sputtering magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain)]. E-mail: olgas@icmm.csic.es; Hernandez-Velez, M. [Instituto de Ciencia de Materiales de Madrid (CSIC), or Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Dept. Fisica Aplicada C-XII, Universidad Autonoma, Cantoblanco 28049 Madrid (Spain); Navas, D. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Auger, M.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM-CSIC), Avda. Gregorio, del Amo 8, 28040 Madrid (Spain); Baldonedo, J.L. [Centro de Microscopia Electronica y Citometria de la Universidad Complutense de, Madrid (Spain); Sanz, R. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Pirota, K.R. [Instituto de Ciencia de Materiales de Madrid (CSIC), or Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain); Vazquez, M. [Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Ines de la Cruz no3, Cantoblanco, 28049 Madrid (Spain)

    2006-01-20

    Development of new methods in the formation of hollow structures, in particular, nanotubes and nanocages are currently generating a great interest as a consequence of the growing relevance of these nanostructures on many technological fields, ranging from optoelectronics to biotechnology. In this work, we report the formation of titanium nitride (TiN) nanotubes and nanohills via reactive sputtering magnetron processes. Anodic Alumina Membranes (AAM) were used as template substrates to grow the TiN nanostructures. The AAM were obtained through electrochemical anodization processes by using oxalic acid solutions as electrolytes. The nanotubes were produced at temperatures below 100 deg. C, and using a pure titanium (99.995%) sputtering target and nitrogen as reactive gas. The obtained TiN thin films showed surface morphologies adjusted to pore diameter and interpore distance of the substrates, as well as ordered arrays of nanotubes or nanohills depending on the sputtering and template conditions. High Resolution Scanning Electron Microscopy (HRSEM) was used to elucidate both the surface order and morphology of the different grown nanostructures. The crystalline structure of the samples was examined using X-ray Diffraction (XRD) patterns and their qualitative chemical composition by using X-ray Energy Dispersive Spectroscopy (XEDS) in a scanning electron microscopy.

  16. Visible-light photocatalytic activity of nitrided TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Camps, Enrique, E-mail: enrique.camps@inin.gob.mx [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, Mexico DF 11801 (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, Mexico DF 11801 (Mexico); Camacho-Lopez, Marco Antonio [Laboratorio de Investigacion y Desarrollo de Materiales Avanzados, Facultad de Quimica, UAEM, km 14.5 Carretera Toluca-Atlacomulco (Mexico); Casados, Dora A. Solis [Centro de Investigacion en Quimica Sustentable, Facultad de Quimica, UAEM, km 14.5 Carretera Toluca-Atlacomulco (Mexico)

    2010-10-25

    TiO{sub 2} thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO{sub 2} films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO{sub 2} and nitrided TiO{sub 2} films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO{sub 2} films had photocatalytic activity, while the unnitrided films did not.

  17. Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

    Directory of Open Access Journals (Sweden)

    Isabelle Jauberteau

    2015-10-01

    Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

  18. The Growth of Gallium Nitride Films via the Innovative Technique of Atomic Layer Epitaxy

    Science.gov (United States)

    1989-06-01

    6 3.2 Aluminum Nitride and AIN/GaN Layered Structures ............ 8 3.3 Boron Nitride and BGaN Graded...of tearing in lower left region, indirectly indicating the presence of multiple layers of BGaN ............................... 14 12. Auger electron...electron spectroscopy sputtered depth profile of a BN/ BGaN /GaN/P-SiC film. Note peak in nitrogen trace as interface of BN is passed

  19. Silicon nitride coated silicon thin film on three dimensions current collector for lithium ion battery anode

    Science.gov (United States)

    Wu, Cheng-Yu; Chang, Chun-Chi; Duh, Jenq-Gong

    2016-09-01

    Silicon nitride coated silicon (N-Si) has been synthesized by two-step DC sputtering on Cu Micro-cone arrays (CMAs) at ambient temperature. The electrochemical properties of N-Si anodes with various thickness of nitride layer are investigated. From the potential window of 1.2 V-0.05 V, high rate charge-discharge and long cycle test have been executed to investigate the electrochemical performances of various N-Si coated Si-based lithium ion batteries anode materials. Higher specific capacity can be obtained after 200 cycles. The cycling stability is enhanced via thinner nitride layer coating as silicon nitride films are converted to Li3N with covered Si thin films. These N-Si anodes can be cycled under high rates up to 10 C due to low charge transfer resistance resulted from silicon nitride films. This indicates that the combination of silicon nitride and silicon can effectively endure high current and thus enhance the cycling stability. It is expected that N-Si is a potential candidate for batteries that can work effectively under high power.

  20. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    Science.gov (United States)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  1. Nano Indentation Inspection of the Mechanical Properties of Gold Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Armen Verdyan

    2007-10-01

    Full Text Available The morphology and the local mechanical properties of gold nitride thin films were studied by atomic force microscope (AFM. Gold nitride films were deposited for the first time on silicon substrate without any buffer layer at room temperature by reactive pulsed laser ablation deposition (RPLD. The films were fabricated on (100 Si wafers by RPLD technique in which KrF excimer laser was used to ablate a gold target in N2 atmosphere (0.1 GPa-100 Pa and ambient temperature. Scanning electron microscopy (SEM and atomic force microscopy inspections showed that the films were flat plane with rms roughness in the range of 35.1 nm-3.6 nm, depending on the deposition pressure. Rutherford backscattering spectrometry (RBS and energy dispersion spectroscopy (EDS used to detect the nitrogen concentration in the films, have revealed a composition close to Au3N. The film

  2. Porous carbon nitride nanosheets for enhanced photocatalytic activities

    Science.gov (United States)

    Hong, Jindui; Yin, Shengming; Pan, Yunxiang; Han, Jianyu; Zhou, Tianhua; Xu, Rong

    2014-11-01

    Porous carbon nitride nanosheets (PCNs) have been prepared for the first time by a simple liquid exfoliation method via probe sonication. These mesoporous nanosheets of around 5 nm in thickness combine several advantages including high surface area, enhanced light absorption and excellent water dispersity. It can be used as a versatile support for co-catalyst loading for photocatalytic dye degradation and water reduction. With 3.8 wt% Co3O4 loaded, PCNs can achieve more efficient photocatalytic degradation of Rhodamine B, compared with non-porous C3N4 nanosheets (CNs), bulk porous C3N4 (PCN) and bulk nonporous C3N4 (CN). With 1.0 wt% Pt loaded, CNs and PCN exhibit 7-8 times enhancement in H2 evolution than CN. Remarkably, PCNs with both porous and nanosheet-like features achieve 26 times higher activity in H2 evolution than CN. These significant improvements in photocatalytic activities can be attributed to the high surface area as well as better electron mobility of the two-dimensional nanostructure.Porous carbon nitride nanosheets (PCNs) have been prepared for the first time by a simple liquid exfoliation method via probe sonication. These mesoporous nanosheets of around 5 nm in thickness combine several advantages including high surface area, enhanced light absorption and excellent water dispersity. It can be used as a versatile support for co-catalyst loading for photocatalytic dye degradation and water reduction. With 3.8 wt% Co3O4 loaded, PCNs can achieve more efficient photocatalytic degradation of Rhodamine B, compared with non-porous C3N4 nanosheets (CNs), bulk porous C3N4 (PCN) and bulk nonporous C3N4 (CN). With 1.0 wt% Pt loaded, CNs and PCN exhibit 7-8 times enhancement in H2 evolution than CN. Remarkably, PCNs with both porous and nanosheet-like features achieve 26 times higher activity in H2 evolution than CN. These significant improvements in photocatalytic activities can be attributed to the high surface area as well as better electron mobility of

  3. Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

    Science.gov (United States)

    Gölden, D.; Hildebrandt, E.; Alff, L.

    2017-01-01

    A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

  4. Oxygen functional groups in graphitic carbon nitride for enhanced photocatalysis.

    Science.gov (United States)

    Liu, Shizhen; Li, Degang; Sun, Hongqi; Ang, Ha Ming; Tadé, Moses O; Wang, Shaobin

    2016-04-15

    Metal-free semiconductors offer a new opportunity for environmental photocatalysis toward a potential breakthrough in high photo efficiency with complete prevention of metal leaching. In this study, graphitic carbon nitride (GCN) modified by oxygen functional groups was synthesized by a hydrothermal treatment of pristine GCN at different temperatures with H2O2. Insights into the emerging characteristics of the modified GCN in photocatalysis were obtained by determining the optical properties, band structure, electrochemical activity and pollutant degradation efficiency. It was found that the introduction of GCN with oxygen functional groups can enhance light absorption and accelerate electron transfer so as to improve the photocatalytic reaction efficiency. The photoinduced reactive radicals and the associated photodegradation were investigated by in situ electron paramagnetic resonance (EPR). The reactive radicals, O2(-) and OH, were responsible for organic degradation.

  5. Graphitic carbon nitride embedded hydrogels for enhanced gel electrophoresis.

    Science.gov (United States)

    Zarei, Mohammad; Ahmadzadeh, Hossein; Goharshadi, Elaheh K; Farzaneh, Ali

    2015-08-05

    Here, we show, for the first time, the use of graphitic carbon nitride (g-C3N4) nanosheets to improve the resolution and efficiency of protein separation in gel electrophoresis. By loading 0.04% (m/v) g-C3N4 nanosheets into the polyacrylamide gel at 25 °C, the thermal conductivity increased approximately 80% which resulted in 20% reduction in Joule heating and overall increase of separation efficiency. Also, polymerization of acrylamide occurred in the absence of tetramethylethylenediamine (TEMED) when the polyacrylamide gel contained g-C3N4 nanosheets. Hence, the g-C3N4 act simultaneously as a polymerization catalyst as well as heat sinks to lower Joule heating effect on band broadening.

  6. First-principles studies of the vibrational properties of amorphous carbon nitrides

    Institute of Scientific and Technical Information of China (English)

    Niu Li; Wang Xuan-Zhang; Zhu Jia-Qi; Gao Wei

    2013-01-01

    Raman spectra of amorphous carbon nitride films (a-C:N) resemble those of typical amorphous carbon (a-C),and no specific features in the spectra are shown due to N doping.The present work provides a correlation between the microstructure and vibrational properties of a-C:N films from first principles.The six periodic model structures of 64 atoms with various mass densities and nitrogen contents are generated by the liquid-quench method using Car-Parinello molecular dynamics.By using Raman coupling tensors calculated with the finite electric field method,Raman spectra are obtained.The calculated results show that the vibrations of C=N could directly contribute to the Raman spectrum.The similarity of the Raman line shapes of N-doped and N-free amorphous carbons is due to the overlapping of C=N and C=C vibration bands.In addition,the origin of characteristic Raman peaks is also given.

  7. Group III-nitride thin films grown using MBE and bismuth

    Science.gov (United States)

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  8. Selective and Regenerative Carbon Dioxide Capture by Highly Polarizing Porous Carbon Nitride.

    Science.gov (United States)

    Oh, Youngtak; Le, Viet-Duc; Maiti, Uday Narayan; Hwang, Jin Ok; Park, Woo Jin; Lim, Joonwon; Lee, Kyung Eun; Bae, Youn-Sang; Kim, Yong-Hyun; Kim, Sang Ouk

    2015-09-22

    Energy-efficient CO2 capture is a stringent demand for green and sustainable energy supply. Strong adsorption is desirable for high capacity and selective capture at ambient conditions but unfavorable for regeneration of adsorbents by a simple pressure control process. Here we present highly regenerative and selective CO2 capture by carbon nitride functionalized porous reduced graphene oxide aerogel surface. The resultant structure demonstrates large CO2 adsorption capacity at ambient conditions (0.43 mmol·g(-1)) and high CO2 selectivity against N2 yet retains regenerability to desorb 98% CO2 by simple pressure swing. First-principles thermodynamics calculations revealed that microporous edges of graphitic carbon nitride offer the optimal CO2 adsorption by induced dipole interaction and allows excellent CO2 selectivity as well as facile regenerability. This work identifies a customized route to reversible gas capture using metal-free, two-dimensional carbonaceous materials, which can be extended to other useful applications.

  9. Synthesis of crumpled nanosheets of polymeric carbon nitride from melamine cyanurate

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martín-Ramos, Pablo [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Sánchez-Arévalo, F.M.; Huerta, L.; Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apdo. Postal 70-360, Cd. Universitaria, Mexico, D.F. 04510 (Mexico); Navas-Gracia, Luis M.; Martín-Gil, Jesús [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

    2013-05-01

    Polymeric carbon nitride was synthesized by pyrolysis in nitrogen flux at different temperatures between 450 and 700 °C using melamine cyanurate as a reagent and sulfuric acid as a catalyst. The obtained carbon nitride consisted of curled nanosheets (650 °C), and globular particles (700 °C) with formula C₆N₇NHNH₂. The reaction yield of the catalyzed reaction was around the 15% for the sample treated at 700 °C, in a tapped crucible. The optical band gap of the polymer obtained at 700 °C is around 2.9 eV. The gap to the Fermi level is around 2 eV, considerably above the half of the band gap (due to electrons trapped in the gap), indicating that the polymer is probably a n-type semiconductor. - Graphical abstract: Transition from amorphous to crystalline carbon nitride, which is composed of globular particles and is a n-type wide band semiconductor. Highlights: • We synthetized carbon nitride using melamine cyanurate. • The reaction of carbon nitride formation is catalyzed by sulfuric acid. • The carbon nitride obtained at 700 °C is composed of globular particles. • The material obtained at 700 °C is a n-type semiconductor.

  10. Combination of carbon nitride and carbon nanotubes: synergistic catalysts for energy conversion.

    Science.gov (United States)

    Gong, Yutong; Wang, Jing; Wei, Zhongzhe; Zhang, Pengfei; Li, Haoran; Wang, Yong

    2014-08-01

    Due to their versatile features and environmental friendliness, functionalized carbon materials show great potential in practical applications, especially in energy conversion. Developing carbon composites with properties that can be modulated by simply changing the ratio of the original materials is an intriguing synthetic strategy. Here, we took cyanamide and multiwalled carbon nanotubes as precursors and introduced a facile method to fabricate a series of graphitic carbon nitride/carbon nanotubes (g-C3 N4 /CNTs) composites. These composites demonstrated different practical applications with different weight ratios of the components, that is, they showed synergistic effects in optoelectronic conversion when g-C3 N4 was the main ingredient and in oxygen reduction reaction (ORR) when CNTs dominated the composites. Our experiments indicated that the high electrical conductivity of carbon nanotubes promoted the transmission of the charges in both cases.

  11. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  12. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  13. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  14. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  15. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  16. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic......-product. A model, that combine the chemical net reaction and the stoichiometric rules, is found to agree with measured deposition rates for given material compositions. Effects of annealing in a nitrogen atmosphere has been investigated for the 400 °C– 1100 °C temperature range. It is observed that PECVD oxy...

  17. Mesoporous Metal-Containing Carbon Nitrides for Improved Photocatalytic Activities

    Directory of Open Access Journals (Sweden)

    Jie Luo

    2013-01-01

    Full Text Available Graphitic carbon nitrides (g-C3N4 have attracted increasing interest due to their unusual properties and promising applications in water splitting, heterogeneous catalysis, and organic contaminant degradation. In this study, a new method was developed for the synthesis of mesoporous Fe contained g-C3N4 (m-Fe-C3N4 photocatalyst by using SiO2 nanoparticles as hard template and dicyandiamide as precursor. The physicochemical properties of m-Fe-C3N4 were thoroughly investigated. The XRD and XPS results indicated that Fe was strongly coordinated with the g-C3N4 matrix and that the doping and mesoporous structure partially deteriorated its crystalline structure. The UV-visible absorption spectra revealed that m-Fe-C3N4 with a unique electronic structure displays an increased band gap in combination with a slightly reduced absorbance, implying that mesoporous structure modified the electronic properties of g-Fe-C3N4. The photocatalytic activity of m-Fe-C3N4 for photodegradation of Rhodamine B (RhB was much higher than that of g-Fe-C3N4, clearly demonstrating porous structure positive effect.

  18. Properties of Al-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Cu3N and AlxCu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ℃ substrate temperature by using a pure Cu and Al target, respectively. X-ray diffraction (XRD) measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted [111] preferred orientation. XRD shows that the growth of Al-doped copper nitride films (AlxCu3N) was affected strongly by doping Al, the intensity of [111] peak decreases with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N from crystallization. AFM shows that the surface of AlxCu3N film is smoother than that of Cu3N film. Compared with the Cu3N films, the resistivities of the Al-doped copper nitride films (AlxCu3N) have been reduced, and the microhardness has been enhanced.

  19. Nitridation of nanocrystalline TiO{sub 2} thin films by treatment with ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Romero-Gomez, P.; Rico, V.; Espinos, J.P.; Gonzalez-Elipe, Agustin R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda. Americo Vespucio 49, 41092 Sevilla (Spain); Palgrave, Robert G. [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA (United Kingdom); Egdell, Russell G., E-mail: russell.egdell@chem.ox.ac.u [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford, OX1 3TA (United Kingdom)

    2011-03-31

    Nanocrystalline anatase (TiO{sub 2}) thin films prepared by a physical vapour deposition method were nitrided by annealing in flowing NH{sub 3} at temperatures ranging between 650 {sup o}C and 700 {sup o}C. It was established that there was a narrow window of temperatures which allowed both incorporation of interstitial nitrogen into the films with retention of the anatase phase without chemical reduction and preservation of the characteristic nanocrystalline morphology. These optimally modified films responded to visible light in photowetting tests and showed the ability to degrade an organic dye under visible light irradiation.

  20. Aluminizing and subsequent nitriding of plain carbon low alloy steels for piston ring applications

    Energy Technology Data Exchange (ETDEWEB)

    Bindumadhavan, P.N.; Keng Wah, H.; Prabhakar, O. [Nanyang Technol. Univ., Singapore (Singapore). Div. of Mater. Eng.; Makesh, S. [Chemical and Nuclear Engineering Building, University of Maryland, 20783, College Park, MD (United States); Gowrishankar, N. [I P Rings Ltd., D 11/12, Industrial Estate, 603209, Maraimalainagar (India)

    2000-05-22

    Nitriding is a case hardening process that is commonly used for increasing the wear life of automotive piston rings. However, special alloy steels are required to achieve high surface hardness and nitrided case depth values required by the automotive industry. The cost of such alloy steels is one of the major components of the total cost of the nitrided piston ring. To address this issue, efforts have been directed towards development of cheaper raw materials as substitutes for nitridable steels. In this study, an attempt has been made to increase the surface hardness of two plain carbon low alloy steels by aluminizing and subsequent diffusion treatment and nitriding. The process parameters for the aluminizing operation are discussed. Results indicate that a near twofold increase in surface hardness is achievable by aluminizing followed by diffusion treatment and nitriding (580-1208 HV for EN32B steel and 650-1454 HV for 15CR3 steel). It has also been found that the nitrided case depth obtained (0.11-0.13 mm for EN32B steel and 0.10-0.14 mm for 15CR3 steel) matches well with the general requirements of the piston ring industry. The diffusion of aluminum into the alloy layer has also been discussed and the theoretical predictions were compared with actual values of Al concentration, as obtained by SEM-EDS system. It is found that Fick's law gives a fairly good prediction of the actual Al concentration profile, in spite of the complexity of the diffusion path. X-Ray diffraction studies have confirmed the presence of AlN in the alloy layer, which could be instrumental in the significant increase in surface hardness. It is proposed that aluminizing followed by diffusion treatment and nitriding of plain carbon low alloy steels could provide an alternative to the use of expensive nitridable steels for piston ring applications. (orig.)

  1. Preparation of flat carbon support films

    NARCIS (Netherlands)

    Koning, RI; Oostergetel, GT; Brisson, A

    2003-01-01

    Wrinkling of carbon support films is known to limit the resolution of electron microscopy images of protein two-dimensional crystals. The origin of carbon wrinkling during preparation of the support films was investigated by reflected light microscopy. We observed that carbon films go through severa

  2. Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

    Energy Technology Data Exchange (ETDEWEB)

    Dante, Roberto C., E-mail: rcdante@yahoo.com [Facultad de Mecánica, Escuela Politécnica Nacional (EPN), Ladrón de Guevara E11-253, Quito (Ecuador); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Huerta, Lazaro [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Lartundo-Rojas, Luis [Centro de Nanociencias y Micro y Nanotecnologías—IPN, Luis Enrique Erro s/n, U. Prof. Adolfo López Mateos, 07738 Ciudad de Mexico, Distrito Federal (Mexico); Santoyo-Salazar, Jaime [Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07360 (Mexico); and others

    2015-03-15

    The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.

  3. Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

    Science.gov (United States)

    Simi, S.; Navas, I.; Vinodkumar, R.; Chalana, S. R.; Gangrade, Mohan; Ganesan, V.; Pillai, V. P. Mahadevan

    2011-09-01

    Zinc nitride (Zn 3N 2) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn 3N 2 structure with lattice parameter very close to bulk of Zn 3N 2. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.

  4. Pentagonal monolayer crystals of carbon, boron nitride, and silver azide

    Energy Technology Data Exchange (ETDEWEB)

    Yagmurcukardes, M., E-mail: mehmetyagmurcukardes@iyte.edu.tr; Senger, R. T., E-mail: tugrulsenger@iyte.edu.tr [Department of Physics, Izmir Institute of Technology, 35430 Urla, Izmir (Turkey); Sahin, H.; Kang, J.; Torun, E.; Peeters, F. M. [Department of Physics, University of Antwerp, Campus Groenenborgerlaan, 2020, Antwerp (Belgium)

    2015-09-14

    In this study, we present a theoretical investigation of structural, electronic, and mechanical properties of pentagonal monolayers of carbon (p-graphene), boron nitride (p-B{sub 2}N{sub 4} and p-B{sub 4}N{sub 2}), and silver azide (p-AgN{sub 3}) by performing state-of-the-art first principles calculations. Our total energy calculations suggest feasible formation of monolayer crystal structures composed entirely of pentagons. In addition, electronic band dispersion calculations indicate that while p-graphene and p-AgN{sub 3} are semiconductors with indirect bandgaps, p-BN structures display metallic behavior. We also investigate the mechanical properties (in-plane stiffness and the Poisson's ratio) of four different pentagonal structures under uniaxial strain. p-graphene is found to have the highest stiffness value and the corresponding Poisson's ratio is found to be negative. Similarly, p-B{sub 2}N{sub 4} and p-B{sub 4}N{sub 2} have negative Poisson's ratio values. On the other hand, the p-AgN{sub 3} has a large and positive Poisson's ratio. In dynamical stability tests based on calculated phonon spectra of these pentagonal monolayers, we find that only p-graphene and p-B{sub 2}N{sub 4} are stable, but p-AgN{sub 3} and p-B{sub 4}N{sub 2} are vulnerable against vibrational excitations.

  5. Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures

    Directory of Open Access Journals (Sweden)

    Beirong Zheng

    2013-01-01

    Full Text Available Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN is deposited by the low pressure chemical vapor deposition (LPCVD process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture.

  6. Reactive magnetron sputter deposition of superconducting niobium titanium nitride thin films with different target sizes

    CERN Document Server

    Bos, B G C; Haalebos, E A F; Gimbel, P M L; Klapwijk, T M; Baselmans, J J A; Endo, A

    2016-01-01

    The superconducting critical temperature (Tc>15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100 mm diameter) system and a large target (127 mm x 444.5 mm) one, with the aim of improving the film uniformity using the large target system. We focus on the Tc of the films and I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc>15 K. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system'...

  7. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  8. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  9. Synthesis of graphitic carbon nitride through pyrolysis of melamine and its electrocatalysis for oxygen reduction reaction

    Institute of Scientific and Technical Information of China (English)

    He-Sheng Zhai; Lei Cao; Xing-Hua Xia

    2013-01-01

    Graphitic carbon nitride (g-C3N4) was synthesized via direct pyrolysis of melamine and its electrocatalysis toward oxygen reduction reaction was studied.The morphology and structures of the products were characterized by scanning electron microscope and X-ray powder diffractometer.It was found that higher pyrolysis temperature resulted in more perfect crystalline structure of the graphitic carbon nitride product.Electrochemical characterizations show that the g-C3N4 has electrocatalytic activity toward ORR through a two-step and two-electron process.

  10. Synthesis and photocatalytic performance of europium-doped graphitic carbon nitride

    Institute of Scientific and Technical Information of China (English)

    徐冬冬; 李晓妮; 刘娟; 黄浪欢

    2013-01-01

    Europium-doped graphitic carbon nitride was synthesized by an easy method and characterized by X-ray diffraction (XRD), ultraviolet-visible diffuse reflection spectroscopy (UV-Vis DRS), Fourier transform infrared spectroscopy (FTIR), photolu-minescence spectra (PL) and transmission electron microscopy (TEM). The effect of dopant concentration on the rate of photocata-lytic degradation was investigated through degrading methylene blue aqueous solution. The results indicated that the europium-doped samples all possessed increased photocatalytic activity and the optimal europium content was 0.38 wt.%. Moreover, a possible photo-catalytic mechanism for the europium-doped graphitic carbon nitride was proposed.

  11. Low temperature NbSi thin film thermometers on Silicon Nitride membranes for bolometer applications

    Energy Technology Data Exchange (ETDEWEB)

    Camus, Ph. E-mail: camus@csnsm.in2p3.fr; Berge, L.; Dumoulin, L.; Marnieros, S.; Torre, J.P

    2000-04-07

    We report the design of amorphous NbSi thin film bolometer thermometers on Silicon Nitride membranes. Due to the low-thermal conductivity of Si{sub 3}N{sub 4}, this material has several applications in millimeter wavelength bolometers and microcalorimetry. Compared to NTD-Ge thermometers, similar sensitivities are obtained with a 50 times lesser volume. The smallest realized films have a rectangular surface (100x400 {mu}m{sup 2}) and are 100 nm thick. Optimization of the thermometer shape, NbSi composition and electrical material contact is discussed. The goal of this development is to manufacture a complete array of bolometers by photolithography techniques.

  12. Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Zhang Xiao-Kang; Yao Qian; Wang Xu-Yang; Chen Guang-Hua; He De-Yan

    2009-01-01

    The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra,h-BN thin films with a wide optical band gap Eg (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970 K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures. In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.

  13. Biomolecule-assisted synthesis of carbon nitride and sulfur-doped carbon nitride heterojunction nanosheets: An efficient heterojunction photocatalyst for photoelectrochemical applications.

    Science.gov (United States)

    Tao, Hua Bing; Yang, Hong Bin; Chen, Jiazang; Miao, Jianwei; Liu, Bin

    2014-01-01

    A biomolecule-assisted pyrolysis method has been developed to synthesize sulfur-doped graphitic carbon nitride (CNS) nanosheets. During the synthesis, sulfur could be introduced as a dopant into the lattice of carbon nitride (CN). Sulfur doping changed the texture as well as relative band positions of CN. By growing CN on preformed sulfur-doped CN nanosheets, composite CN/CNS heterojunction nanosheets were constructed, which significantly enhanced the photoelectrochemical performance as compared with various control counterparts including CN, CNS and physically mixed CN and CNS (CN+CNS). The enhanced photoelectrochemical performance of CN/CNS heterojunction nanosheets could be ascribed to the efficient separation of photoexcited charge carriers across the heterojunction interface. The strategy of designing and preparing CN/CNS heterojunction photocatalysts in this work can open up new directions for the construction of all CN-based heterojunction photocatalysts.

  14. Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

    Science.gov (United States)

    Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.

    2017-03-01

    Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.

  15. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Science.gov (United States)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-02-01

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  16. Effects of Nitride on the Tribological Properties of the Low Carbon Alloy Steel

    Directory of Open Access Journals (Sweden)

    Yuh-Ping Chang

    2013-01-01

    Full Text Available The technology of composite heat treatment is used popularly for low friction and wear resistance of drive elements. A large number of papers about the heat treatment technology had been proposed. Especially, the nitride treatment has been used widely for the purpose of wear resistance and low friction in the industry. Therefore, the self-developed vertical ball/disk friction tester with the measurement system was used to study the effects of nitride on the tribological properties of the low carbon alloy steel—SCM415— in this study. The experiments were conducted under dry and severe wear conditions. The variations of friction coefficient and surface magnetization were simultaneously recorded during dynamic friction process. After each test, the microstructures of the wear particles were observed and analyzed under a SEM, and the depth of wear track is measured by means of a surface tester. According to the experimental results, the wear resistance of the specimens with carburizing-nitride is significantly larger than the case of nitride-carburizing. Moreover, the surface magnetization was especially larger for the case of nitride-carburizing. As a result, the wear particles always stay in the interfaces and the wear mechanism becomes complex. Therefore, it is necessary to put nitride after carburizing for the composite heat treatments.

  17. Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Merchant, A.R.; McCulloch, D.; McKenzie, D.R.; Yin, Y.; Gerstner, E.G. [New South Wales Univ., Kensington, NSW (Australia)

    1996-12-31

    Carbon nitride materials have been the focus of research efforts worldwide. Most materials studied have been amorphous, with only a few groups claiming to have found a crystalline material. In this paper, carbon nitride materials prepared by two different techniques are analysed, and found to be remarkably similar in bonding and structure. The materials appear to have a primarily sp{sup 2} bonded carbon structure with a lower bond length than found in an amorphous carbon. This is explained by nitrogen substituting into `rings` to a saturation level of about one nitrogen per three carbon atoms. No evidence was found for a crystalline structure of formula C{sub 3}N{sub 4}, or any amorphous derivative of it. 16 refs., 1 tab., 5 figs.

  18. The electrical properties of sulfur-implanted cubic boron nitride thin films

    Institute of Scientific and Technical Information of China (English)

    Deng Jin-Xiang; Qin Yang; Kong Le; Yang Xue-Liang; Li Ting; Zhao Wei-Ping; Yang Ping

    2012-01-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions.The implantation energy of the ions is 19 keV,and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2.The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃.The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders,and the activation energy of c-BN thin films is 0.18 eV.

  19. Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

    Science.gov (United States)

    Maezono, Yoshinari; Toshikawa, Kiyohiko; Kurosawa, Kou; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi

    2007-06-01

    In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp (λ=126 nm, hν=9.8 eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.

  20. Influence of Thickness on Field Emission Characteristics of Nanometre Boron Nitride Thin Films

    Institute of Scientific and Technical Information of China (English)

    顾广瑞; 李英爱; 陶艳春; 何志; 李俊杰; 殷红; 李卫青; 赵永年

    2003-01-01

    Nanometre boron nitride (BN) thin films with various thickness (54-135 nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11 V/μm and the highest emission current density of 240 μA/cm2 at an electric field of 23 V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.

  1. Electrical and optical properties of silicon-doped gallium nitride polycrystalline films

    Indian Academy of Sciences (India)

    S R Bhattacharyya; A K Pal

    2008-02-01

    Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (ℎ-GaN) while films deposited at 623 K were predominantly cubic (-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott’s hopping for films containing -GaN while Efros and Shklovskii (E–S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing ℎ-GaN. A crossover from Mott’s hopping to E–S hopping in the `soft’ Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ∼ 2.73 eV to that for peak at ∼ 3.11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.

  2. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  5. Films Composed Of Diamond And Diamondlike Carbon

    Science.gov (United States)

    Shing, Yuh-Han

    1995-01-01

    Proposed films composed of diamond and diamondlike carbon useful as wear-resistant and self-lubricating protective and tribological coats at extreme temperatures and in corrosive and oxidizing environments. Films have wide variety of industrial applications.

  6. Structural, optical and electrical properties of indium nitride polycrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Silva, M.V.S. da, E-mail: marcus.sansil@gmail.com [Instituto de Fisica, UFBA, Campus Ondina, 40210-340, Salvador (Brazil); David, D.G.F.; Pepe, I.; Ferreira da Silva, A.; Almeida, J.S. de [Instituto de Fisica, UFBA, Campus Ondina, 40210-340, Salvador (Brazil); Gazoto, A.L. [Instituto de Fisica Gleb Wataghin (IFGW), UNICAMP, 13083-859, Campinas, SP (Brazil); Santos, A.O. dos [Instituto de Fisica Gleb Wataghin (IFGW), UNICAMP, 13083-859, Campinas, SP (Brazil); CCSST, Universidade Federal do Maranhao, 65900-410 Imperatriz, MA (Brazil); Cardoso, L.P.; Meneses, E.A. [Instituto de Fisica Gleb Wataghin (IFGW), UNICAMP, 13083-859, Campinas, SP (Brazil); Graybill, D.L. [75 Logan Street Brooklyn, NY 11208 (United States); Mertes, K.M. [Los Alamos National Laboratory, Los Alamos, NM 8754 (United States)

    2012-05-31

    The structural, optical and electrical properties of InN polycrystalline films on glass substrate are investigated by means of X-ray photoelectron spectroscopy, Raman scattering measurements, X-ray diffraction analysis, optical spectroscopy, and electrical measurements as a function of the inverse of temperature. The absorption edge for the films is most likely due to an impurity band formed by the presence of defects in the material. Such an impurity band, located at 1.6 eV extends itself to about 1.8 eV above the Fermi level, and it is attributed to nitrogen vacancies present in the material. The Raman scattering data also reveal the incorporation of oxygen in the InN films, leading to the formation of the In{sub 2}O{sub 3} amorphous phase during the process of sputtering. Additionally, the X-ray photoelectron spectroscopy of the valence band, which is highly desirable to the determination of the Fermi level, confirms the optical gap energy. Furthermore, the X-ray diffraction patterns of the thinner films present broader peaks, indicating high values for the strain between the film lattice and the glass substrate. Finally, first principles calculations are used to investigate the optical properties of InN and also to support the experimental findings. - Highlights: Black-Right-Pointing-Pointer InN thin films with different thicknesses and good quality were synthesized. Black-Right-Pointing-Pointer Semiconductor behavior and some contamination by In{sub 2}O{sub 3} were found. Black-Right-Pointing-Pointer The band gap was close to 1.8 eV compared to 0.7 eV found in pure InN. Black-Right-Pointing-Pointer The electronic structure for this material was determined.

  7. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    Science.gov (United States)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  8. Magnetostrictive iron gallium thin films grown onto antiferromagnetic manganese nitride: Structure and magnetism

    Science.gov (United States)

    Mandru, Andrada-Oana; Corbett, Joseph P.; Richard, Andrea L.; Gallagher, James; Meng, Keng-Yuan; Ingram, David C.; Yang, Fengyuan; Smith, Arthur R.

    2016-10-01

    We report structural and magnetic properties of magnetostrictive Fe100 -xGax (x ≈ 15) alloys when deposited onto antiferromagnetic manganese nitride and non-magnetic magnesium oxide substrates. From X-ray diffraction measurements, we find that the FeGa films are single crystalline. Scanning tunneling microscopy imaging reveals that the surface morphologies are dictated by the growth temperature, composition, and substrate. The magnetic properties can be tailored by the substrate, as found by magnetic force microscopy imaging and vibrating sample magnetometry measurements. In addition to pronounced tetragonal deformations, depositing FeGa onto manganese nitride leads to the formation of stripe-like magnetic domain patterns and to the appearance of perpendicular magnetic anisotropy.

  9. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: rupeshkr@barc.gov.in [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Soni, A. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, D.R.; Kulkarni, M.S. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2014-11-15

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications.

  10. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J., E-mail: lopes@pdi-berlin.de; Riechert, H. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  11. Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Ţǎlu Ştefan

    2015-03-01

    Full Text Available In this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100 wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K to 2.66 (at 673 K and then decreased to 2.33 (at 773 K. The fractal analysis in correlation with the averaged power spectral density (surface yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

  12. Research on the piezoelectric response of cubic and hexagonal boron nitride films

    Institute of Scientific and Technical Information of China (English)

    CHEN Xi-ming; SUN Lian-jie; YANG Bao-he; GUO Yan; WU Xiao-guo

    2012-01-01

    Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/A(l)/Si(111) wafers byradio frequency (RF) magnetron sputtering.The structure of BN films is investigated by Fourier transform infrared (FTIR)spectroscopy and X-ray diffraction (XRD) spectra,and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM).The results show that when the flow ratio of nitrogen and argon is 2∶18,the cubic BN (c-BN) film is deposited with high purity and c-axis orientation,and when the flow ratio of nitrogen and argon is 4∶20,the hexagonal BN (h-BN) film is deposited with high c-axis orientation.Both particles are uniform and compact,and the roughnesses are 1.5 nm and 2.29 nm,respectively.The h-BN films have better piezoelectric response and distribution than the c-BN films.

  13. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Belkerk, B. E., E-mail: boubakeur.belkerk@gmail.com [Institut des Matériaux Jean Rouxel (IMN), University of Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes cedex 3 (France); Universités de Constantine, Laboratoire Microsystèmes et Instrumentation (LMI), Université Constantine 1, Faculté des Sciences de la Technologie, Route de Ain El Bey, Constantine 25017 (Algeria); Bensalem, S.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y. [Institut des Matériaux Jean Rouxel (IMN), University of Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes cedex 3 (France); Al Brithen, H. [Department of Physics and Astronomy at College of Science, King Saud University at Riyadh (Saudi Arabia)

    2014-12-01

    In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

  14. Electrical properties and thermal stability of Pd-doped copper nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Ji, A. L.; Lu, N. P.; Gao, L.; Zhang, W. B.; Liao, L. G.; Cao, Z. X. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, P. O. Box 603, Beijing 100190 (China)

    2013-01-28

    Pd-doped copper nitride films with Pd concentrations up to 5.6 at. % were successfully synthesized by reactive magnetron sputtering of metal targets. Higher concentration of Pd (>5.6 at. %) would deteriorate the quality of the deposits. XPS and XRD data strongly suggest that Pd atoms occupy the centers of the Cu{sub 3}N unit cells rather than simply substituting for the Cu atoms. A reduction in the electrical resistivity by three orders of magnitude was observed when the Pd concentration increases from zero to 5.6 at. %. All the deposits with the Pd concentration up to 5.6 at. % exhibit n-typed conductivity behavior. The corresponding carrier concentrations increase by four orders of magnitude from 10{sup 17} to 10{sup 21} cm{sup -3}. Compared with the undoped copper nitride films, a weakly Pd-doped Cu{sub 3}N films possess fine thermal stability in vacuum. And the decomposition product after annealing at 450 Degree-Sign C exhibits a good metallic behavior, indicating that it qualifies the fabrication of conduct wires or metallic structures for the promising applications.

  15. Chemical rate model for the surface pyrolysis of tetrakis(dimethylamido)titanium to form titanium nitride films

    Science.gov (United States)

    Toprac, Anthony J.; Iacoponi, John A.; Littau, Karl A.

    1998-09-01

    A chemical kinetic rate model for the deposition of titanium nitride films from the surface reaction of tetrakis(dimethyl-amido)titanium (TDMAT) was developed. Without ammonia addition, TDMAT forms a titanium nitride film by pyrolyzing on the hot substrate surface. Experimental data from the applied materials 5000 deposition tool was modeled using a CSTR formulation. With the parameters of the surface reaction model regressed to fit portions of the experimental results, reasonably accurate model predictions over the entire domain of experimental data were obtained.

  16. Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale

    Directory of Open Access Journals (Sweden)

    Costas A. Charitidis

    2013-04-01

    Full Text Available The use of materials with very attractive friction and wear properties has raised much attention in research and industrial sectors. A wide range of tribological applications, including rolling and sliding bearings, machining, mechanical seals, biomedical implants and microelectromechanical systems (MEMS, require thin films with high mechanical strength, chemical inertness, broad optical transparency, high refractive index, wide bandgap excellent thermal conductivity and extremely low thermal expansion. Carbon based thin films like diamond, diamond-like carbon, carbon nitride and cubic boron nitride known as “super-hard” material have been studied thoroughly as the ideal candidate for tribological applications. In this study, the results of experimental and simulation works on the nanotribological behavior of carbon films and fundamental mechanisms of friction and lubricity at the nano-scale are reviewed. The study is focused on the nanomechanical properties and analysis of the nanoscratching processes at low loads to obtain quantitative analysis, the comparison obtain quantitative analysis, the comparison of their elastic/plastic deformation response, and nanotribological behavior of the a-C, ta-C, a-C:H, CNx, and a-C:M films. For ta-C and a-C:M films new data are presented and discussed.

  17. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; MARTINEZ-MIRANDA,L.J.; BARBOUR,J. CHARLES; SIMPSON,REGINA L.; OVERMYER,DONALD L.

    2000-01-27

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of 3- and 4-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetic of PLD growth results in films becoming more ``diamondlike'', i.e. increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film.

  18. Optical characterization of sputtered carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Ager, J.W. III.

    1992-05-01

    Spattered carbon films are widely used as protective overcoats for thin film disk media. Raman spectroscopy is nondestructive and relatively rapid and is well suited for the characterization of carbon films. Specific features in the Raman spectra are empirically correlated with the rates of specific types of mechanical wear for both hydrogenated and unhydrogenated films. This observation is interpreted in terms of a random covalent network, in which the mechanical performance of the film is determined by the nature of the bonding that links sp{sup 2}-bonded domains.

  19. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  20. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

    Institute of Scientific and Technical Information of China (English)

    FAN Ya-Ming; ZHANG Xing-Wang; YOU Jing-Bi; YING Jie; TAN Hai-Ren; CHEN Nuo-Fu

    2009-01-01

    Cubic boron nitride (c-BN) films were deposited on Si(O01) substrates in an ion beam assisted deposition (IBAD)system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at χc = 50% to 2.1 at χc = 90%.Furthermore, the relationship between n and p for BN films can be described by the Anderzon-Schreiber equation,and the overlap field parameter γ is determined to be 2.05.

  1. In situ infrared spectroscopic study of cubic boron nitride thin film delamination

    Institute of Scientific and Technical Information of China (English)

    Yang Hang-Sheng; Zhang Jian-Ying; Nie An-Min; Zhang Xiao-Bin

    2008-01-01

    This paper investigates the procedure of cubic boron nitride(cBN)thin film delamination by Fourier-transform infrared(IR)spectroscopy.It finds that the apparent IR absorption peak area near 1380 cm-1 and 1073 cm-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN,respectively,increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation.The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination,which suggests that the relaxation of the turbostratic BN(tBN)layer from the compressed condition is also hysteretic to film delamination.Moreover,cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN(amorphons BN)/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.

  2. Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

    Science.gov (United States)

    Chegel, Raad

    2016-10-01

    The electronic properties of pure and carbon doped zigzag and armchair Boron Nitride Nanotubes (BNNTs) have been investigated based on tight binding formalism. It was found that the band gap is reduced due to substitution of Boron or Nitrogen atoms by carbon atoms and the doping effects of B- and N-substituted BNNTs are different. The applied electric field converts the carbon doped BNNTs from semiconductor to metal. The gap energy reduction shows an identical dependence to electric field and doping for both armchair and zigzag carbon doped BNNTs. Our results indicate that the band gap of carbon doped BNNTs is a function of the Impurity concentration, electric field strength and the direction between the electric field and dopant location. The band gap for C-doped BNNTs with four carbon atoms decreases linearly but for two carbon atoms, it is constant at first then decreases linearly.

  3. Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

    CERN Document Server

    Kinsey, Nathaniel; Courtwright, Devon; DeVault, Clayton; Bonner, Carl E; Gavrilenko, Vladimir I; Shalaev, Vladimir M; Hagan, David J; Van Stryland, Eric W; Boltasseva, Alexandra

    2015-01-01

    Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

  4. Reactive DC magnetron sputtered zirconium nitride (ZrN) thin film and its characterization

    Science.gov (United States)

    Subramanian, B.; Ashok, K.; Sanjeeviraja, C.; Kuppusami, P.; Jayachandran, M.

    2008-05-01

    Zirconium nitride (ZrN) thin films were prepared by using reactive direct current (DC) magnetron sputtering onto different substrates. A good polycrystalline nature with face centered cubic structure was observed from X-ray Diffraction for ZrN thin films. The observed 'd' values from the X-ray Diffraction pattern were found to be in good agreement with the standard 'd' values (JCPDS-89-5269). An emission peak is observed at 587nm from Photoluminescence studies for the excitation at 430nm. The resistivity value (ρ) of 2.1798 (μΩ cm) was observed. ZrN has high wear resistance and low coefficient of friction. A less negative value of Ecorr and lower value of Icorr observed for ZrN / Mild Steel (MS) clearly confirm the better corrosion resistance than the bare substrate. Also the higher Rct value and lower Cdl value was observed for ZrN / MS from Nyquist - plot.

  5. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  6. Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

    CERN Document Server

    Coiffard, G; Driessen, E F C; Pignard, S; Calvo, M; Catalano, A; Goupy, J; Monfardini, A

    2015-01-01

    We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 Hz/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.

  7. Microstructure controlling of Ti/N particles dissipated energy to superficial layer of titanium nitride film

    Institute of Scientific and Technical Information of China (English)

    MA Zhongquan; ZHANG Qin

    2004-01-01

    The titanium nitride (TiNx) thin film with a controllable surface structure was fabricated by the dc-reactive magnetron sputtering technique, and the variation of microstructure in the surface layer with the energy of condensed adatom was investigated through X-ray diffraction (XRD) pattern and transmission electron microscope (TEM). It was found that the lattice parameters and the full width at half maximum (fwhm) of XRD peak on the top layers in the preferred orientation of (111) and (002) were closely correlated to the impacting induced phase composition, compressive strain, crystallite size and the fault density of the thin films. In the theory, a new means was used to model the atomistic process of per condensed adatom. The average energy at least in the minimum energy state of the incorporate adatom on TiN surface layer was statistically formulized through a careful consideration of dynamical process, which properly interpreted the experimental observations.

  8. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  9. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  10. Catalytic self-assembly preparation and characterization of carbon nitride nanotubes by a solvothermal method

    Institute of Scientific and Technical Information of China (English)

    HUANG Fuling; CAO Chuanbao; ZHU Hesun

    2005-01-01

    A solvothermal reaction of anhydrous C3N3Cl3 and sodium using cyclohexane as solvent and NiCl2 as catalyst precursor has been carried out to prepare carbon nitride nanotubes successfully at 230℃ and 1.8 MPa. The carbon nitride nanotubes were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction (ED), electron energy loss spectrum (EELS) and Raman spectrum. SEM and TEM results indicated that the tubes have a length of 20-30 μm, a uniform outer diameter of about 50-60 nm, an inner diameter of 30-40 nm and are highly ordered assembled as bundles. The EELS measurement indicated that the ratio of N/C was about 1.00. The ED and XRD analyses revealed that the tube may have a new CN crystalline structure. The growth mechanism of nanotubes was discussed.

  11. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.; Yang, Kaida; Lukaszew, R. Alejandra [Department of Physics, The College of William & Mary, Small Hall, 300 Ukrop Way, Williamsburg, Virginia 23185 (United States)

    2016-03-15

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

  12. Far IR Transmission Characteristics of Silicon Nitride Films using Fourier Transform Spectroscopy

    Science.gov (United States)

    Ferrusca, D.; Castillo-Domínguez, E.; Velázquez, M.; Hughes, D.; Serrano, A.; Torres-Jácome, A.

    2009-12-01

    We are fabricating amorphous Silicon (a-Si) bolometers doped with boron with a measured NEP˜1.5×10-16 W/Hz1/2 suitable for use in millimeter and sub-millimeter astronomy. In this paper we present the preliminary results of the absorber optimization for the a-Si bolometers. A film of Silicon Nitride (SiN), deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process at INAOE, with or without metallic coating is used as a weak thermal link to the heat sink as well as an absorber. We have measured the transmission spectrum of thin films of SiN in the range of 200 to 1000 GHz using Fourier Transform Spectroscopy (FTS) and a bolometric system with a NEP˜1.26×10-13. The transmission of thin films of SiN with a thickness of 0.4 μn has been measured at temperatures of 290 K and 4 K. The uncoated SiN films have a transmission of 80% and we expect a 50% transmission for the metallic (e.g. Titanium) coated films.

  13. The initial oxidation behaviors of uranium nitride UNx (x = 0, 0.23, 0.68, 1.66) films

    Science.gov (United States)

    Lu, Lei; Li, Fangfang; Hu, Yin; Xiao, Hong; Bai, Bin; Zhang, Yanzhi; Luo, Lizhu; Liu, Jing; Liu, Kezhao

    2016-11-01

    The initial oxidation behaviors of uranium nitride films with different N/U ratios have been focused in the present work. Uranium nitride films with different nitrogen content, UNx (x = 0, 0.23, 0.68, 1.66), have been prepared on the Si substrate by radio frequency magnetron sputtering method. The experimental results showed that the UNx (x = 0, 0.23, 0.68, 1.66) films were fine and dense. The initial oxidation processes of uranium nitride films were investigated in an ultra-high vacuum chamber of Auger electron spectroscopy. After 105 L oxygen exposure, the oxide layer of UO2 were formed on the surface of U, and UN0.23, UN0.68 films formed UO2 with little UNxOy, while the UN1.66 film generated UNxOy oxide layer. UN1.66 film exhibited the thinnest oxide layer and provided the best considerable protection against oxygen attack. Also, the AES transition lines of UNxOy were identified for the first time.

  14. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  15. Intrinsic stress analysis of sputtered carbon film

    Institute of Scientific and Technical Information of China (English)

    Liqin Liu; Zhanshan Wang; Jingtao Zhu; Zhong Zhang; Moyan Tan; Qiushi Huang; Rui Chen; Jing Xu; Lingyan Chen

    2008-01-01

    Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated.The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses.The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition.By varying argon pressure and target-substrate distance,energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level.The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

  16. 2D to 3D transition of polymeric carbon nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales (IIM), Universidad Nacional Autónoma de México, Apdo. Postal 70–360, Cd. Universitaria, México D.F. 04510 (Mexico); Martín-Ramos, Pablo [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martín-Gil, Jesús; Navas-Gracia, Luis M. [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

    2014-11-15

    The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

  17. Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction*

    Institute of Scientific and Technical Information of China (English)

    Song Jiuxu; Yang Yintang; Liu Hongxia; Guo Lixin

    2011-01-01

    Using the method combined non-equilibrium Green's function with density functional theory, the electronic transport properties of an (8, 0) carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated. In the current voltage characteristic of the heterojunction, negative differential resistance was found under positive and negative bias, which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage These results are meaningful to modeling and simulating on related electronic devices.

  18. Immobilizing photogenerated electrons from graphitic carbon nitride for an improved visible-light photocatalytic activity

    OpenAIRE

    Han Sun; Yue Cao; Leiyu Feng; Yinguang Chen

    2016-01-01

    Reducing the recombination probability of photogenerated electrons and holes is pivotal in enhancing the photocatalytic ability of graphitic carbon nitride (g-C3N4). Speeding the departure of photogenerated electrons is the most commonly used method of achieving this. To the best of our knowledge, there is no report on suppressing the recombination of photogenerated electron–hole pairs by immobilizing the electrons with ester functional groups. Here, for the first time the mesoporous g-C3N4 (...

  19. Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ligang [Key Laboratory of Biobased Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang [Key Laboratory of Biobased Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Mu, Xindong, E-mail: muxd@qibebt.ac.cn [Key Laboratory of Biobased Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China)

    2013-09-01

    Graphical abstract: - Highlights: • P-doped g-C{sub 3}N{sub 4} has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C{sub 3}N{sub 4}. • A postannealing treatment further enhanced the activity of P-doped g-C{sub 3}N{sub 4}. • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C{sub 3}N{sub 4}, which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry.

  20. The Effects of Radial Compression on Thermal Conductivity of Carbon and Boron Nitride Nanotubes

    OpenAIRE

    Haijun Shen

    2012-01-01

    By using molecular dynamics method, thermal conductivity of (10, 10) carbon and boron nitride (BN) nanotubes under radial compression was investigated, and the - (thermal conductivity versus temperature) curves of the two nanotubes were obtained. It is found that with the increase of temperature the thermal conductivity of two nanotubes decreases; the nanotubes, under both the local compression and whole compression, have lower thermal conductivity, and the larger the compressive deformat...

  1. Cu and Boron Doped Carbon Nitride for Highly Selective Oxidation of Toluene to Benzaldehyde.

    Science.gov (United States)

    Han, Hongling; Ding, Guodong; Wu, Tianbin; Yang, Dexin; Jiang, Tao; Han, Buxing

    2015-07-13

    A novel Cu and boron doped graphitic carbon nitride catalyst (Cu-CNB) was synthesized using cheap precursors and systematically characterized. The selective oxidation of toluene proceeded very smoothly over the catalyst at 70 °C using tert-butyl hydroperoxide (TBHP) as the oxidant to exclusively afford benzaldehyde. The catalyst can be used for at least five cycles without decrease in activity and selectivity.

  2. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  3. Cobalt-doped graphitic carbon nitride photocatalysts with high activity for hydrogen evolution

    Science.gov (United States)

    Chen, Pei-Wen; Li, Kui; Yu, Yu-Xiang; Zhang, Wei-De

    2017-01-01

    Cobalt-doped graphitic carbon nitride (Cosbnd CN) was synthesized by one-step thermal polycondensation using cobalt phthalocyanine (CoPc) and melamine as precursors. The π-π interaction between melamine and CoPc promotes cobalt doping into the framework of g-C3N4. The prepared samples were carefully characterized and the results demonstrated that Co-doped graphitic carbon nitride inhibited the crystal growth of graphitic carbon nitride (CN), leading to larger specific surface area (33.1 m2 g-1) and abundant Co-Nx active sites, narrower band gap energy and more efficient separation of photogenerated electrons and holes. 0.46% Cosbnd CN exhibited higher hydrogen evolution rate (28.0 μmol h-1) under visible light irradiation, which is about 3.0 times of that over the pure CN and about 2.2 times of that over cobalt-doped CN using CoCl2 • 6H2O as a cobalt source. This study provides a valuable strategy to modify CN with enhanced photocatalytic performance.

  4. Charge Modulation in Graphitic Carbon Nitride as a Switchable Approach to High-Capacity Hydrogen Storage.

    Science.gov (United States)

    Tan, Xin; Kou, Liangzhi; Tahini, Hassan A; Smith, Sean C

    2015-11-01

    Electrical charging of graphitic carbon nitride nanosheets (g-C4 N3 and g-C3 N4 ) is proposed as a strategy for high-capacity and electrocatalytically switchable hydrogen storage. Using first-principle calculations, we found that the adsorption energy of H2 molecules on graphitic carbon nitride nanosheets is dramatically enhanced by injecting extra electrons into the adsorbent. At full hydrogen coverage, the negatively charged graphitic carbon nitride achieves storage capacities up to 6-7 wt %. In contrast to other hydrogen storage approaches, the storage/release occurs spontaneously once extra electrons are introduced or removed, and these processes can be simply controlled by switching on/off the charging voltage. Therefore, this approach promises both facile reversibility and tunable kinetics without the need of specific catalysts. Importantly, g-C4 N3 has good electrical conductivity and high electron mobility, which can be a very good candidate for electron injection/release. These predictions may prove to be instrumental in searching for a new class of high-capacity hydrogen storage materials.

  5. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren;

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  6. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo-Vega, C. [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Km. 107 Carretera Tijuana-Ensenada, A. Postal 2732, 22860, Ensenada B.C. (Mexico)]. E-mail: gallardo@ccmc.unam.mx; Cruz, W. de la [Centro de Ciencias de la Materia Condensada, UNAM, Km. 107 Carretera Tijuana-Ensenada, A. Postal 2681, 22860, Ensenada B.C. (Mexico)

    2006-09-15

    Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 x 10{sup -2} to 1.3 x 10{sup -1} Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu{sub 3}N) and x = 0.25 (Cu{sub 4}N) when the nitrogen pressure is 1.3 x 10{sup -1} and 5 x 10{sup -2} Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 A and with x = 0.33 have values between 3.810 and 3.830 A. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.

  7. Piezoresistive effect in carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The piezoresistive effect of the pristine carbon nanotube (CNT) films has been studied. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The piezoresistive effect in the pristine CNT films was studied by a three-point bending test. The gauge factor for the pristine CNT films under 500 microstrains was found to be at least 65 at room temperature, and increased with temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in CNT films may be ascribed to a pressure-induced change in the band gap and the defects.

  8. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  9. Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

    Science.gov (United States)

    Kiseleva, D. V.; Yurjev, Y. N.; Petrakov, Y. V.; Sidelev, D. V.; Korzhenko, D. V.; Erofeev, E. V.

    2017-01-01

    Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41·1023 – 3.48·1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.

  10. Deposition of magnesium nitride thin films on stainless steel-304 substrates by using a plasma focus device

    Science.gov (United States)

    Ramezani, Amir Hoshang; Habibi, Maryam; Ghoranneviss, Mahmood

    2014-08-01

    In this research, for the first time, we synthesize magnesium nitride thin films on 304-type stainless steel substrates using a Mather-type (2 kJ) plasma focus (PF) device. The films of magnesium nitride are coated with different number of focus shots (like 15, 25 and 35) at a distance of 8 cm from the anode tip and at 0° angular position with respect to the anode axis. For investigation of the structural properties and surface morphology of magnesium nitride films, we utilized the X-ray diffractometer (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) analysis, respectively. Also, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. Furthermore, Vicker's microhardness is used to study the mechanical properties of the deposited films. The results show that the degree of crystallinity of deposited thin films (from XRD), the average size of particles and surface roughness (from AFM), crystalline growth of structures (from SEM) and the hardness values of the films depend on the number of focus shots. The EDX analysis demonstrates the existence of the elemental composition of magnesium in the deposited samples.

  11. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  12. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  13. The impact of substrate properties and thermal annealing on tantalum nitride thin films

    Science.gov (United States)

    Grosser, M.; Münch, M.; Seidel, H.; Bienert, C.; Roosen, A.; Schmid, U.

    2012-01-01

    In this study film properties of sputter-deposited tantalum nitride (TaNx) thin layers are investigated focusing on the impact of substrate properties, varying nitrogen content for film synthetization as well as post-deposition annealings in the temperature range up to 500 °C. For comparison, these investigations are done on low temperature co-fired ceramics and on silicon based substrates whereas the latter approach ensures defined and well-known surface properties. Furthermore, results on the phase evolution with high temperature annealings are presented showing a transformation of Ta4N to Ta2N in the temperature range between 350 °C and 500 °C. With increasing nitrogen content (i.e. nitrogen flow during film deposition) in the TaNx layers the topography shows first an increase in surface roughness, next a range where a smoothing of the surface characteristics is observed, and finally buckling and the existence of grain agglomerates. All these analyses are further evaluated with electrical measurements on the film resistivity and on the oxidation behaviour to gain deeper insight into material parameters relevant for micromachined devices which are operated under harsh environmental conditions.

  14. The impact of substrate properties and thermal annealing on tantalum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Grosser, M., E-mail: michaela_grosser@yahoo.de [Chair of Micromechanics, Microfluidics/Microactuators, Saarland University, 66123 Saarbruecken (Germany); Muench, M.; Seidel, H. [Chair of Micromechanics, Microfluidics/Microactuators, Saarland University, 66123 Saarbruecken (Germany); Bienert, C.; Roosen, A. [Friedrich-Alexander-University Erlangen-Nuremberg, Martensstr. 5, D-91058 Erlangen (Germany); Schmid, U. [Department for Microsystems Technology, Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)

    2012-01-15

    In this study film properties of sputter-deposited tantalum nitride (TaN{sub x}) thin layers are investigated focusing on the impact of substrate properties, varying nitrogen content for film synthetization as well as post-deposition annealings in the temperature range up to 500 Degree-Sign C. For comparison, these investigations are done on low temperature co-fired ceramics and on silicon based substrates whereas the latter approach ensures defined and well-known surface properties. Furthermore, results on the phase evolution with high temperature annealings are presented showing a transformation of Ta{sub 4}N to Ta{sub 2}N in the temperature range between 350 Degree-Sign C and 500 Degree-Sign C. With increasing nitrogen content (i.e. nitrogen flow during film deposition) in the TaN{sub x} layers the topography shows first an increase in surface roughness, next a range where a smoothing of the surface characteristics is observed, and finally buckling and the existence of grain agglomerates. All these analyses are further evaluated with electrical measurements on the film resistivity and on the oxidation behaviour to gain deeper insight into material parameters relevant for micromachined devices which are operated under harsh environmental conditions.

  15. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    Energy Technology Data Exchange (ETDEWEB)

    Burke, Micheal, E-mail: micheal.burke@tyndall.ie; Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland)

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  16. Piezoresistive Sensors Based on Carbon Nanotube Films

    Institute of Scientific and Technical Information of China (English)

    L(U) Jian-wei; WANG Wan-lu; LIAO Ke-jun; WANG Yong-tian; LIU CHang-lin; Zeng Qing-gao

    2005-01-01

    Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test.Carbon nanotubes were synthesized by hot filament chemical vapor deposition.The experimental results showed that the carbon nanotubes have a striking piezoresistive effect.The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.

  17. Preparation of composite electroheat carbon film

    Institute of Scientific and Technical Information of China (English)

    XIA Jin-tong; TU Chuan-jun; LI Yan; HU Li-min; DENG Jiu-hua

    2005-01-01

    A kind of conductive and heating unit, which can reach a high surface electroheat temperature at a low voltage, was developed in view of the traditional electroheat coating which has a low surface electroheat temperature and an insufficient heat resistance of its binder. The coating molded electroheat carbon film(CMECF) was prepared by carbonizing the coating which was prepared by adding modified resin into flake graphite and carbon fiber, coating molded onto the surface of the heat resisting matrix after dried, while the hot pressing molded electroheat thick carbon film(HPMETCF) was prepared by carbonizing the bodies whose powders were hot pressing molded directly.The surface and inner microstructure of the carbon film was characterized and analyzed by SEM and DSC/TG, while electroheat property was tested by voltage-current volume resistivity tester and electrical parameter tester. The results show that, close-packed carbon network configuration is formed within the composite electroheat carbon film film after anti-oxidizable treatment reaches a higher surface electroheat temperature than that of the existing electroheat coatings at a low voltage, and has excellent electroheat property, high thermal efficiency as well as stable physicochemical property. It is found that, at room temperature(19± 2 ℃) and 22 V for 5 min, the surface electroheat temperature of the self-produced CMECF (mfiller/mresin = 1. 8/1) reaches 112 ℃ while HPMETCF (mfiller/mresin = 3. 6/1) reaches 265 ℃.

  18. Oxygen Reduction Electrocatalysts Based on Coupled Iron Nitride Nanoparticles with Nitrogen-Doped Carbon

    Directory of Open Access Journals (Sweden)

    Min Jung Park

    2016-06-01

    Full Text Available Aimed at developing a highly active and stable non-precious metal electrocatalyst for oxygen reduction reaction (ORR, a novel FexNy/NC nanocomposite—that is composed of highly dispersed iron nitride nanoparticles supported on nitrogen-doped carbon (NC—was prepared by pyrolyzing carbon black with an iron-containing precursor in an NH3 atmosphere. The influence of the various synthetic parameters such as the Fe precursor, Fe content, pyrolysis temperature and pyrolysis time on ORR performance of the prepared iron nitride nanoparticles was investigated. The formed phases were determined by experimental and simulated X-ray diffraction (XRD of numerous iron nitride species. We found that Fe3N phase creates superactive non-metallic catalytic sites for ORR that are more active than those of the constituents. The optimized Fe3N/NC nanocomposite exhibited excellent ORR activity and a direct four-electron pathway in alkaline solution. Furthermore, the hybrid material showed outstanding catalytic durability in alkaline electrolyte, even after 4,000 potential cycles.

  19. Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode.

    Science.gov (United States)

    Nandi, Dip K; Sen, Uttam K; Sinha, Soumyadeep; Dhara, Arpan; Mitra, Sagar; Sarkar, Shaibal K

    2015-07-14

    This article demonstrates the atomic layer deposition (ALD) of tungsten nitride using tungsten hexacarbonyl [W(CO)6] and ammonia [NH3] and its use as a lithium-ion battery anode. In situ quartz crystal microbalance (QCM), ellipsometry and X-ray reflectivity (XRR) measurements are carried out to confirm the self-limiting behaviour of the deposition. A saturated growth rate of ca. 0.35 Å per ALD cycle is found within a narrow temperature window of 180-195 °C. In situ Fourier transform infrared (FTIR) vibrational spectroscopy is used to determine the reaction pathways of the surface bound species after each ALD half cycle. The elemental presence and chemical composition is determined by XPS. The as-deposited material is found to be amorphous and crystallized to h-W2N upon annealing at an elevated temperature under an ammonia atmosphere. The as-deposited materials are found to be n-type, conducting with an average carrier concentration of ca. 10(20) at room temperature. Electrochemical studies of the as-deposited films open up the possibility of this material to be used as an anode material in Li-ion batteries. The incorporation of MWCNTs as a scaffold layer further enhances the electrochemical storage capacity of the ALD grown tungsten nitride (WNx). Ex situ XRD analysis confirms the conversion based reaction mechanism of the as-grown material with Li under operation.

  20. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

    Science.gov (United States)

    Shams, Q. A.; Brown, W. D.

    1989-10-01

    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  1. Effective Route to Graphitic carbon Nitride from Ball-Milled Amorphous carbon in NH3 Atmosphere Under Annealing

    Institute of Scientific and Technical Information of China (English)

    费振义; 刘玉先

    2003-01-01

    Graphitic carbon nitride (g-C3N4) powders were successfully synthesized from ball-milled amorphous carbon under NHs atmosphere at high temperature, for the first time to the best of our knowledge. The combined characteristic data obtained by x-ray diffraction, high-resolution transmission-electron microscopy, electron energy loss spectroscopy, Raman spectroscopy, energy dispersive spectroscopic analysis, and Fourier transformation infrared spectroscopy provide substantial evidence for the graphite-like sp2-bonded structure with C3N4 stoichiometry.

  2. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  3. Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G.; Hourahine, B.; Trager-Cowan, C. [Department of Physics, SUPA, University of Strathclyde, Glasgow (United Kingdom); Vilalta-Clemente, A.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Caen (France); Gamarra, P.; Lacam, C.; Tordjman, M.; Di Forte-Poisson, M.A. [Thales Research and Technology, III-V Lab, Marcoussis (France); Parbrook, P.J. [Department of Electrical and Electronic Engineering, University of Sheffield (United Kingdom); Day, A.P. [Aunt Daisy Scientific Ltd., Claremont House, High St, Lydney (United Kingdom); England, G. [K. E. Developments Ltd., Cambridge (United Kingdom)

    2012-03-15

    We describe the use of electron channelling contrast imaging (ECCI) - in a field emission scanning electron microscope (SEM) - to reveal and identify defects in nitride semiconductor thin films. In ECCI changes in crystallographic orientation, or changes in lattice constant due to local strain, are revealed by changes in grey scale in an image constructed by monitoring the intensity of backscattered electrons (BSEs) as an electron beam is scanned over a suitably oriented sample. Extremely small orientation changes are detectable, enabling small angle tilt and rotation boundaries and dislocations to be imaged. Images with a resolution of tens of nanometres are obtainable with ECCI. In this paper, we describe the use of ECCI with TEM to determine threading dislocation densities and types in InAlN/GaN heterostructures grown on SiC and sapphire substrates. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

    Science.gov (United States)

    Gleskova, H.; Wagner, S.; Gašparík, V.; Kováč, P.

    2001-05-01

    We optimized silicon nitride (SiN x) layers, deposited by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) at 150°C, to provide a high quality gate dielectric layer for the amorphous silicon thin film technology on polyimide foils. The layers were deposited from mixtures of silane, ammonia, and hydrogen. We varied the H 2 flow rate from 55 to 220 sccm and the rf power from 5 to 50 W, while the pressure was kept at 500 mTorr and the ratio of ammonia to silane flow at 10:1. The best film was obtained from the gas composition of SiH 4:NH 3:H 2=1:10:44 and the rf power of ˜20 W. This film grows at the rate of 1.5 Å/s, has a refractive index n=1.80, a dielectric constant ɛ=7.46, a dielectric breakdown field >3.4 MV/cm, a Si/N ratio of ˜0.67, and a hydrogen content of ˜2×10 22 cm -3, and etches in 10:1 buffered HF at a rate of 61 Å/s.

  5. High temperature performance of sputter-deposited piezoelectric aluminum nitride thin films

    Science.gov (United States)

    Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U.

    2015-05-01

    Aluminum nitride (AlN) is a promising material for sensor applications in harsh environments such as turbine exhausts or thermal power plants due to its piezoelectric properties, good thermal match to silicon and high temperature stability. Typically, the usage of piezoelectric materials in high temperature is limited by the Curie-temperature, the increase of the leakage current as well as by enhanced diffusion effects in the materials. In order to exploit the high temperature potential of AlN thin films, post deposition annealing experiments up to 1000°C in both oxygen and nitrogen gas atmospheres for 2 h were performed. X-ray diffraction measurements indicate that the thin films are chemically stable in a pure oxygen atmosphere for 2 h at annealing temperatures of up to 900°C. After a 2 h annealing step at 1000°C in pure oxygen. However, a 100 nm thin AlN film is completely oxidized. In contrast, the layer is stable up to 1000°C in pure nitrogen atmosphere. The surface topology changes significantly at annealing temperatures above 800°C independent of annealing atmosphere. The surface roughness is increased by about one order of magnitude compared to the "as deposited" state. This is predominantly attributed to recrystallization processes occurring during high temperature loading. Up to an annealing temperature of 700°C, a Poole-Frenkel conduction mechanism dominates the leakage current characteristics. Above, a mixture of different leakage current mechanisms is observed.

  6. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Energy Technology Data Exchange (ETDEWEB)

    Doan, T.C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J.Y.; Jiang, H.X., E-mail: hx.jiang@ttu.edu

    2015-05-21

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for {sup 10}B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10{sup −7} cm{sup 2}/V for electrons and holes, which is comparable to the value of about 10{sup −7} cm{sup 2}/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  7. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  8. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  9. Yellow luminescence of gallium nitride generated by carbon defect complexes.

    Science.gov (United States)

    Demchenko, D O; Diallo, I C; Reshchikov, M A

    2013-02-22

    We demonstrate that yellow luminescence often observed in both carbon-doped and pristine GaN is the result of electronic transitions via the C(N)-O(N) complex. In contrast to common isolated defects, the C(N)-O(N) complex is energetically favorable, and its calculated optical properties, such as absorption and emission energies, a zero phonon line, and the thermodynamic transition level, all show excellent agreement with measured luminescence data. Thus, by combining hybrid density functional theory and experimental measurements, we propose a solution to a long-standing problem of the GaN yellow luminescence.

  10. Influence of the initial nitrogen content in titanium films on the nitridation and silicidation processes

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, C.; Perez-Casero, R.; Martinez-Duart, J.M. [Universidad Autonoma de Madrid (Spain). Dept. de Fisica Aplicada; Perez-Rigueiro, J. [Dpto. Ciencia de Materiales, ETSI Caminos, Universidad Politecnica de Madrid, E-28040, Madrid (Spain); Vazquez, L.; Fernandez, M. [Instituto Ciencia de Materiales, CSIC, E-28049, Madrid (Spain)

    1997-08-15

    The rapid thermal annealing of Ti films on silicon in a nitrogen atmosphere seems to be a very promising method to obtain the Si/TiSi{sub 2}/TiN structure. We have tried to increase the final nitrogen content (i.e. TiN thickness) by incorporating nitrogen during the deposition of the initial Ti films. The influence of the nitrogen present in the titanium film on the silicidation process has been studied by comparison with the silicidation of pure titanium. The evolution of the nitrogen content with thermal treatment conditions has been established by nuclear reaction analysis (NRA). The nitrogen initially incorporated in the Ti film plays a passive role during the nitridation process, since its initial presence does not strongly influence the further incorporation of nitrogen from the atmosphere. The final nitrogen content of the N-doped samples is the addition of the nitrogen incorporated from the atmosphere during the thermal treatment in pure titanium samples and the nitrogen incorporated during deposition. The silicidation process has been studied using complementary techniques. The sheet resistances, Rutherford backscattering spectra and grazing X-ray diffraction (GXRD) diagrams have allowed us to establish the evolution of the reaction. Silicidation is not affected by the nitrogen incorporated during deposition. No differences have been found due to the presence of nitrogen. Nevertheless, changes in the surface morphology were found by atomic force microscopy (AFM). The Ti(N{sub 2}) samples are characterized by lower root mean square (rms) surface roughness values and different features. (orig.) 14 refs.

  11. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Oikawa, H.; Akiyama, R. [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Kanazawa, K. [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Kuroda, S., E-mail: kuroda@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Harayama, I. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Nagashima, K. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Sekiba, D. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tandem Accelerator Complex, Research Facility Center for Science and Technology, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8577 (Japan); Ashizawa, Y.; Tsukamoto, A.; Nakagawa, K. [College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi, 274-8501 (Japan); Ota, N. [Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan)

    2015-01-01

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10{sup -9} A/cm{sup 2} at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10{sup -9}A/cm{sup 2} at 1MV/cm was achieved.

  12. Formation of (113) texture in fcc nitride thin films and its influence on the film properties

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, A.R., E-mail: akshath.shetty@epfl.ch; Karimi, A.

    2013-01-01

    This work presents a study of XRD measurements on the development of the (113) preferential orientation with film thickness for Ti{sub 0.67}Al{sub 0.33}N films grown on Si(100) substrates by pulsed DC magnetron sputtering. The buildup of (113) texture was observed using both θ–2θ scans and pole figure XRD techniques that are in contrast to the commonly observed formation of the (111) orientation. Three regimes of texture growth have been determined to lead to the microstructural evolution and textural development of (113) in Ti{sub 0.67}Al{sub 0.33}N by minimizing the total energy of the film. The first regime is characterized by small crystallites preferentially growing in <002> direction; the second involves the development of (111) crystallites associated with the competitive growth mechanism, as well as tilting of (002) planes to let the <111> orientation remain parallel to the film normal. In the third regime, we have found that to minimize the total energy of the system, the orientation of the growing film switches from (111) to (113) with preferentially less density that causes a decrease in hardness and stress formed in the (111)-oriented grains. The surface topography of the coatings was studied using scanning electron microscopy (SEM). Different mechanisms which could explain the crossover of (002), (111), and (113) orientations through film thickness are discussed. Development of the (113) orientation is examined with respect to stress, morphology and mechanical properties. - Highlights: ► (113)-oriented TiAlN films were grown on Si with film thickness. ► This is in contrast to expected (111) orientation as reported by others. ► Three regimes lead to texture development of (113). ► Formation of (113) leads to a decrease in hardness, stress and change in topography. ► To reduce the total energy, orientation of growing film changes to less dense (113)

  13. Carbon films produced from ionic liquid carbon precursors

    Science.gov (United States)

    Dai, Sheng; Luo, Huimin; Lee, Je Seung

    2013-11-05

    The invention is directed to a method for producing a film of porous carbon, the method comprising carbonizing a film of an ionic liquid, wherein the ionic liquid has the general formula (X.sup.+a).sub.x(Y.sup.-b).sub.y, wherein the variables a and b are, independently, non-zero integers, and the subscript variables x and y are, independently, non-zero integers, such that ax=by, and at least one of X.sup.+ and Y.sup.- possesses at least one carbon-nitrogen unsaturated bond. The invention is also directed to a composition comprising a porous carbon film possessing a nitrogen content of at least 10 atom %.

  14. Crystal structure of polymeric carbon nitride and the determination of its process-temperature-induced modifications

    Science.gov (United States)

    Tyborski, T.; Merschjann, C.; Orthmann, S.; Yang, F.; Lux-Steiner, M.-Ch; Schedel-Niedrig, Th

    2013-10-01

    Based on the arrangement of two-dimensional ‘melon’, we construct a unit cell for polymeric carbon nitride (PCN) synthesized via thermal polycondensation, whose theoretical diffraction powder pattern includes all major features measured in x-ray diffraction. With the help of this unit cell, we describe the process-temperature-induced crystallographic changes in PCN that occur within a temperature interval between 510 and 610 °C. We also discuss further potential modifications of the unit cell for PCN. It is found that both triazine- and heptazine-based g-C3N4 can only account for minor phases within the investigated synthesis products.

  15. Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Song Jiuxu; Yang Yintang; Liu Hongxia [Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Guo Lixin, E-mail: songjiuxu@126.com [School of Science, Xidian University, Xi' an 710071 (China)

    2011-04-15

    Using the method combined non-equilibrium Green's function with density functional theory, the electronic transport properties of an (8, 0) carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated. In the current voltage characteristic of the heterojunction, negative differential resistance was found under positive and negative bias, which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage. These results are meaningful to modeling and simulating on related electronic devices. (semiconductor physics)

  16. Nickel Decorated on Phosphorous-Doped Carbon Nitride as an Efficient Photocatalyst for Reduction of Nitrobenzenes

    Science.gov (United States)

    Kumar, Anurag; Kumar, Pawan; Joshi, Chetan; Manchanda, Manvi; Boukherroub, Rabah; Jain, Suman L.

    2016-01-01

    Nickel nanoparticle-decorated phosphorous-doped graphitic carbon nitride (Ni@g-PC3N4) was synthesized and used as an efficient photoactive catalyst for the reduction of various nitrobenzenes under visible light irradiation. Hydrazine monohydrate was used as the source of protons and electrons for the intended reaction. The developed photocatalyst was found to be highly active and afforded excellent product yields under mild experimental conditions. In addition, the photocatalyst could easily be recovered and reused for several runs without any detectable leaching during the reaction.

  17. Microwave-assisted polyol synthesis of carbon nitride dots from folic acid for cell imaging

    Directory of Open Access Journals (Sweden)

    Guan WW

    2014-10-01

    Full Text Available Weiwei Guan,1,* Wei Gu,2,* Ling Ye,2 Chenyang Guo,1 Su Su,1 Pinxiang Xu,1,3 Ming Xue1,3 1Department of Pharmacology, School of Basic Medical Sciences, Capital Medical University, Beijing, People’s Republic of China; 2Department of Chemical Biology, School of Chemical Biology and Pharmaceutical Sciences, Capital Medical University, Beijing, People’s Republic of China; 3Beijing Laboratory for Biomedical Detection Technology and Instrument, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: A green, one-step microwave-assisted polyol synthesis was employed to prepare blue luminescent carbon nitride dots (CNDs using folic acid molecules as both carbon and nitrogen sources. The as-prepared CNDs had an average size of around 4.51 nm and could be well dispersed in water. Under excitation at 360 nm, the CNDs exhibited a strong blue luminescence and the quantum yield was estimated to be 18.9%, which is greater than that of other reported CNDs. Moreover, the CNDs showed low cytotoxicity and could efficiently label C6 glioma cells, demonstrating their potential in cell imaging. Keywords: carbon nitride dots (CNDs, folic acid, photoluminescence, cell imaging

  18. Effects of strain on carbon donors and acceptors in hexagonal boron nitride monolayers

    Science.gov (United States)

    Fujimoto, Yoshitaka; Saito, Susumu

    2016-01-01

    We present first-principles density functional calculations that clarify the electronic properties of carbon defects in hexagonal boron nitride (h -BN) monolayers under biaxially applied strains. We find that strain can control the ionization energies of both donor and acceptor states. Furthermore, we also find that strain can lead to the dramatic change in conduction channel properties of donor states due to the interchange of the conduction-band-minimum state with the nearly-free-electron state. We also report the simulated scanning tunneling microscopy (STM) images of carbon defects in h -BN monolayers for experimental identification of those defects. We show that the STM images strongly reflect distinctive spatial distributions of local density of states around carbon defects depending on the substitution sites and thereby they could be identified by using STM experiments.

  19. Simulated radiation effects in the superinsulating phase of titanium nitride films

    Directory of Open Access Journals (Sweden)

    Vujisić Miloš Lj.

    2011-01-01

    Full Text Available This paper investigates possible effects of alpha particle and ion beam irradiation on the properties of the superinsulating phase, recently observed in titanium nitride films, by using numerical simulation of particle transport. Unique physical properties of the superinsulating state are considered by relying on a two-dimensional Josephson junction array as a model of material structure. It is suggested that radiation-induced change of the Josephson junction charging energy would not affect the current-voltage characteristics of the superinsulating film significantly. However, it is theorized that a relapse to an insulating state with thermally activated resistance is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs caused by incident and displaced ions may also destroy the conditions for a superinsulating phase to exist. Finally, even the energy loss to phonons can influence the superinsulating state, by increasing the effective temperature of the phonon thermostat, thereby reestablishing means for an energy exchange that can support Cooper pair tunneling.

  20. Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride

    Science.gov (United States)

    Simmendinger, Julian; Pracht, Uwe S.; Daschke, Lena; Proslier, Thomas; Klug, Jeffrey A.; Dressel, Martin; Scheffler, Marc

    2016-08-01

    We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K ≥Tc≥2.78 K . Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm-1 (0.1 to 1.1 THz). The superconducting energy scales, i.e., the critical temperature Tc, the pairing energy Δ , and the superfluid stiffness J , and the superfluid density ns can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.

  1. Gallium nitride based thin films for photon and particle radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Markus

    2012-07-23

    Ionization chambers have been used since the beginning of the 20th century for measuring ionizing radiation and still represent the ''gold standard'' in dosimetry. However, since the sensitivity of the devices is proportional to the detection volume, ionization chambers are not common in numerous medical applications, such as imaging. In these fields, spatially resolved dose information is, beside film-systems, usually measured with scintillators and photo-multipliers, which is a relatively complex and expensive technique. For thus much effort has been focused on the development of novel detection systems in the last decades and especially in the last few years. Examples include germanium or silicon photoconductive detectors, MOSFETs, and PIN-diodes. Although for these systems, miniaturization for spatially resolved detection is possible, they suffer from a range of disadvantages. Characteristics such as poor measurement stability, material degradation, and/or a limited measurement range prevent routine application of these techniques in medical diagnostic devices. This work presents the development and evaluation of gallium nitride (GaN) thin films and heterostructures to validate their application in x-ray detection in the medical regime. Furthermore, the impact of particle radiation on device response was investigated. Although previous publications revealed relatively low energy absorption of GaN, it is possible to achieve very high signal amplification factors inside the material due to an appropriate sensor configuration, which, in turn, compensates the low energy absorption. Thus, gallium nitride can be used as a photo-conductor with ohmic contacts. The conductive volume of the sensor changes in the presence of external radiation, which results in an amplified measurement signal after applying a bias voltage to the device. Experiments revealed a sensitivity of the device between air kerma rates of 1 {mu}Gy/s and 20 mGy/s. In this range

  2. Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

    Science.gov (United States)

    Park, Ji-Yeon; Man Song, Keun; Min, Yo-Sep; Choi, Chel-Jong; Seok Kim, Yoon; Lee, Sung-Nam

    2015-11-16

    Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

  3. Amorphous carbon nitride as an alternative electrode material in electroanalysis: Simultaneous determination of dopamine and ascorbic acid

    Energy Technology Data Exchange (ETDEWEB)

    Medeiros, Roberta A., E-mail: roantigo@hotmail.com [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil); Matos, Roberto [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil); Benchikh, Abdelkader [LECVE, Faculté de la Technologie, Département de Génie des Procédés, Université Abderrahmane MIRA, Béjaïa (Algeria); LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Saidani, Boualem [LECVE, Faculté de la Technologie, Département de Génie des Procédés, Université Abderrahmane MIRA, Béjaïa (Algeria); Debiemme-Chouvy, Catherine [LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Deslouis, Claude, E-mail: claude.deslouis@upmc.fr [LISE UPR 15 du CNRS, Université Pierre et Marie Curie, 4, Place Jussieu, 75005 Paris (France); Rocha-Filho, Romeu C.; Fatibello-Filho, Orlando [Departamento de Química, Universidade Federal de São Carlos, C.P. 676, 13560-970 São Carlos, SP (Brazil)

    2013-10-03

    Graphical abstract: -- Highlights: •a-CN{sub x} films are a new class of electrodic carbon materials that present several properties similar to those of BDD films. •a-CN{sub x} and BDD were used as working electrodes for simultaneous determination of DA and AA. •Electrochemical pretreatments on a-CN{sub x} or BDD modified the nature of the surface terminations. •An anodic pretreatment in 0.1 mol L{sup −1} KOH was necessary to attain an adequate separation of the DA and AA oxidation potential peaks. •For the first time in the literature, the use of an a-CN{sub x} electrode in a complete electroanalytical procedure is reported. -- Abstract: Boron-doped diamond (BDD) films are excellent electrode materials, whose electrochemical activity for some analytes can be tuned by controlling their surface termination, most commonly either to predominantly hydrogen or oxygen. This tuning can be accomplished by e.g. suitable cathodic or anodic electrochemical pretreatments. Recently, it has been shown that amorphous carbon nitride (a-CN{sub x}) films may present electrochemical characteristics similar to those of BDD, including the influence of surface termination on their electrochemical activity toward some analytes. In this work, we report for the first time a complete electroanalytical method using an a-CN{sub x} electrode. Thus, an a-CN{sub x} film deposited on a stainless steel foil by DC magnetron sputtering is proposed as an alternative electrode for the simultaneous determination of dopamine (DA) and ascorbic acid (AA) in synthetic biological samples by square-wave voltammetry. The obtained results are compared with those attained using a BDD electrode. For both electrodes, a same anodic pretreatment in 0.1 mol L{sup −1} KOH was necessary to attain an adequate and equivalent separation of the DA and AA oxidation potential peaks of about 330 mV. The detection limits obtained for the simultaneous determination of these analytes using the a-CN{sub x

  4. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  5. Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

    2016-08-15

    Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

  6. A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

    Science.gov (United States)

    Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

    2015-02-01

    Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

  7. Films of Carbon Nanomaterials for Transparent Conductors

    Directory of Open Access Journals (Sweden)

    Jun Wei

    2013-05-01

    Full Text Available The demand for transparent conductors is expected to grow rapidly as electronic devices, such as touch screens, displays, solid state lighting and photovoltaics become ubiquitous in our lives. Doped metal oxides, especially indium tin oxide, are the commonly used materials for transparent conductors. As there are some drawbacks to this class of materials, exploration of alternative materials has been conducted. There is an interest in films of carbon nanomaterials such as, carbon nanotubes and graphene as they exhibit outstanding properties. This article reviews the synthesis and assembly of these films and their post-treatment. These processes determine the film performance and understanding of this platform will be useful for future work to improve the film performance.

  8. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    Science.gov (United States)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-05-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8-17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9-5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  9. Amorphous carbon nitride as an alternative electrode material in electroanalysis: simultaneous determination of dopamine and ascorbic acid.

    Science.gov (United States)

    Medeiros, Roberta A; Matos, Roberto; Benchikh, Abdelkader; Saidani, Boualem; Debiemme-Chouvy, Catherine; Deslouis, Claude; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2013-10-03

    Boron-doped diamond (BDD) films are excellent electrode materials, whose electrochemical activity for some analytes can be tuned by controlling their surface termination, most commonly either to predominantly hydrogen or oxygen. This tuning can be accomplished by e.g. suitable cathodic or anodic electrochemical pretreatments. Recently, it has been shown that amorphous carbon nitride (a-CNx) films may present electrochemical characteristics similar to those of BDD, including the influence of surface termination on their electrochemical activity toward some analytes. In this work, we report for the first time a complete electroanalytical method using an a-CNx electrode. Thus, an a-CNx film deposited on a stainless steel foil by DC magnetron sputtering is proposed as an alternative electrode for the simultaneous determination of dopamine (DA) and ascorbic acid (AA) in synthetic biological samples by square-wave voltammetry. The obtained results are compared with those attained using a BDD electrode. For both electrodes, a same anodic pretreatment in 0.1 mol L(-1) KOH was necessary to attain an adequate and equivalent separation of the DA and AA oxidation potential peaks of about 330 mV. The detection limits obtained for the simultaneous determination of these analytes using the a-CNx electrode were 0.0656 μmol L(-1) for DA and 1.05 μmol L(-1) for AA, whereas with the BDD electrode these values were 0.283 μmol L(-1) and 0.968 μmol L(-1), respectively. Furthermore, the results obtained in the analysis of the analytes in synthetic biological samples were satisfactory, attesting the potential application of the a-CNx electrode in electroanalysis.

  10. Surface enhanced Raman scattering activity of TiN thin film prepared via nitridation of sol-gel derived TiO2 film

    Science.gov (United States)

    Dong, Zhanliang; Wei, Hengyong; Chen, Ying; Wang, Ruisheng; Zhao, Junhong; Lin, Jian; Bu, Jinglong; Wei, Yingna; Cui, Yi; Yu, Yun

    2015-10-01

    Surface-enhanced Raman scattering (SERS) is a powerful and non-destructive analytical technique tool for chemical and biological sensing applications. Metal-free SERS substrates have recently been developed by using semiconductor nanostructures. The optical property of TiN film is similar to that of gold. Besides that, its good chemical inertness and thermodynamic stability make TiN thin film an excellent candidate for SERS. In order to investigate its SERS activity, the TiN thin film was successfully prepared via direct nitridation of the sol-gel derived TiO2 thin film on the quartz substrate using ammonia gas as reducing agent. The crystallite structures and morphology of TiN thin film were determined by XRD, RAMAN and FE-SEM. The results show that the thin film obtained is cubic titanium nitride with a lattice parameter of 4.2349 Å. The surface of TiN thin film is rough and with the particles of 50 nm in average sizes. The thickness of TiN thin film is about 130 nm. The TiN thin film displays a surface Plasmon resonance absorption peak at around 476 nm, which can lead to a strong enhancement of the EM field on the interface. The Raman signal of the probe molecule R6G was greatly enhanced through TiN thin film substrates. The enhancement factor is about 4.1×103 and the detection limit achieves 10-6 M for R6G. The TiN thin film substrate also shows a good reproducibility of SERS performance. The results indicate that TiN thin film is an attractive material with potential application in SERS substrates.

  11. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    Science.gov (United States)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  12. Environmentally Assisted Cracking in Silicon Nitride Barrier Films on Poly(ethylene terephthalate) Substrates.

    Science.gov (United States)

    Kim, Kyungjin; Luo, Hao; Singh, Ankit K; Zhu, Ting; Graham, Samuel; Pierron, Olivier N

    2016-10-03

    A singular critical onset strain value has been used to characterize the strain limits of barrier films used in flexible electronics. However, such metrics do not account for time-dependent or environmentally assisted cracking, which can be critical in determining the overall reliability of these thin-film coatings. In this work, the time-dependent channel crack growth behavior of silicon nitride barrier films on poly(ethylene terephthalate) (PET) substrates is investigated in dry and humid environments by tensile tests with in situ optical microscopy and numerical models. The results reveal the occurrence of environmentally assisted crack growth at strains well below the critical onset crack strain and in the absence of polymer-relaxation-assisted, time-dependent crack growth. The crack growth rates in laboratory air are about 1 order of magnitude larger than those tested in dry environments (dry air or dry nitrogen). In laboratory air, crack growth rates increase from ∼200 nm/s to 60 μm/s for applied stress intensity factors, K, ranging from 1.0 to 1.4 MPa·m(1/2), below the measured fracture toughness Kc of 1.8 MPa·m(1/2). The crack growth rates in dry environments were also strongly dependent on the prior storage of the specimens, with larger rates for specimens exposed to laboratory air (and therefore moisture) prior to testing compared to specimens stored in a dry environment. This behavior is attributed to moisture-assisted cracking, with a measured power law exponent of ∼22 in laboratory air. This study also reveals that much larger densities of channel cracks develop in the humid environment, suggesting an easier initiation of channel cracks in the presence of water vapor. The results obtained in this work are critical to address the time-dependent and environmental reliability issues of thin brittle barriers on PET substrates for flexible electronics applications.

  13. Electromagnetic characteristics of carbon nanotube film materials

    Directory of Open Access Journals (Sweden)

    Zhang Wei

    2015-08-01

    Full Text Available Carbon nanotube (CNT possesses remarkable electrical conductivity, which shows great potential for the application as electromagnetic shielding material. This paper aims to characterize the electromagnetic parameters of a high CNT loading film by using waveguide method. The effects of layer number of CNT laminate, CNT alignment and resin impregnation on the electromagnetic characteristics were analyzed. It is shown that CNT film exhibits anisotropic electromagnetic characteristic. Pristine CNT film shows higher real part of complex permittivity, conductivity and shielding effectiveness when the polarized direction of incident wave is perpendicular to the winding direction of CNT film. For the CNT film laminates, complex permittivity increases with increasing layer number, and correspondingly, shielding effectiveness decreases. The five-layer CNT film shows extraordinary shielding performance with shielding effectiveness ranging from 67 dB to 78 dB in X-band. Stretching process induces the alignment of CNTs. When aligned direction of CNTs is parallel to the electric field, CNT film shows negative permittivity and higher conductivity. Moreover, resin impregnation into CNT film leads to the decrease of conductivity and shielding effectiveness. This research will contribute to the structural design for the application of CNT film as electromagnetic shielding materials.

  14. Dispersing molecular cobalt in graphitic carbon nitride frameworks for photocatalytic water oxidation.

    Science.gov (United States)

    Zhang, Guigang; Huang, Caijin; Wang, Xinchen

    2015-03-01

    The development of water oxidation catalysts (WOCs) to cooperate with light-energy transducers for solar energy conversion by water splitting and CO2 fixation is a demanding challenge. The key measure is to develop efficient and sustainable WOCs that can support a sustainable photocatalyst to reduce over-potentials and thus to enhance reaction rate of water oxidation reaction. Cobalt has been indentified as active component of WOCs for photo/electrochemical water oxidation, and its performance relies strongly on the contact and adhesion of the cobalt species with photoactive substrates. Here, cobalt is homogeneously engineered into the framework of pristine graphitic carbon nitride (g-C3 N4 ) via chemical interaction, establishing surface junctions on the polymeric photocatalyst for the water oxidation reaction. This modification promotes the surface kinetics of oxygen evolution reaction by the g-C3 N4 -based photocatalytic system made of inexpensive substances, and further optimizations in the optical and textural structure of Co-g-C3 N4 is envisaged by considering ample choice of modification schemes for carbon nitride materials.

  15. Graphitic carbon nitride/graphene oxide/reduced graphene oxide nanocomposites for photoluminescence and photocatalysis

    Science.gov (United States)

    Aleksandrzak, Malgorzata; Kukulka, Wojciech; Mijowska, Ewa

    2017-03-01

    The study presents a modification of graphitic carbon nitride (g-C3N4) with graphene oxide (GO) and reduced graphene oxide (rGO) and investigation of photoluminescent and photocatalytic properties. The influence of GO and rGO lateral sizes used for the modification was investigated. The nanomaterials were characterized with atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), diffuse reflectance UV-vis spectroscopy (DR-UV-vis) and photoluminescence spectroscopy (PL). PL revealed that pristine graphitic carbon nitride and its nanocomposites with GO and rGO emitted up-converted photoluminescence (UCPL) which could contribute to the improvement of photocatalytic activity of the materials. The photoactivity was evaluated in a process of phenol decomposition under visible light. A hybrid composed of rGO nanoparticles (rGONPs, 4-135 nm) exhibited the highest photoactivity compared to rGO with size of 150 nm-7.2 μm and graphene oxide with the corresponding sizes. The possible reason of the superior photocatalytic activity is the most enhanced UCPL of rGONPs, contributing to the emission of light with higher energy than the incident light, resulting in improved photogeneration of electron-hole pairs.

  16. Polymeric graphitic carbon nitride as a heterogeneous organocatalyst: from photochemistry to multipurpose catalysis to sustainable chemistry.

    Science.gov (United States)

    Wang, Yong; Wang, Xinchen; Antonietti, Markus

    2012-01-02

    Polymeric graphitic carbon nitride materials (for simplicity: g-C(3)N(4)) have attracted much attention in recent years because of their similarity to graphene. They are composed of C, N, and some minor H content only. In contrast to graphenes, g-C(3)N(4) is a medium-bandgap semiconductor and in that role an effective photocatalyst and chemical catalyst for a broad variety of reactions. In this Review, we describe the "polymer chemistry" of this structure, how band positions and bandgap can be varied by doping and copolymerization, and how the organic solid can be textured to make it an effective heterogenous catalyst. g-C(3)N(4) and its modifications have a high thermal and chemical stability and can catalyze a number of "dream reactions", such as photochemical splitting of water, mild and selective oxidation reactions, and--as a coactive catalytic support--superactive hydrogenation reactions. As carbon nitride is metal-free as such, it also tolerates functional groups and is therefore suited for multipurpose applications in biomass conversion and sustainable chemistry.

  17. Rational design of carbon nitride photocatalysts by identification of cyanamide defects as catalytically relevant sites

    Science.gov (United States)

    Lau, Vincent Wing-Hei; Moudrakovski, Igor; Botari, Tiago; Weinberger, Simon; Mesch, Maria B.; Duppel, Viola; Senker, Jürgen; Blum, Volker; Lotsch, Bettina V.

    2016-07-01

    The heptazine-based polymer melon (also known as graphitic carbon nitride, g-C3N4) is a promising photocatalyst for hydrogen evolution. Nonetheless, attempts to improve its inherently low activity are rarely based on rational approaches because of a lack of fundamental understanding of its mechanistic operation. Here we employ molecular heptazine-based model catalysts to identify the cyanamide moiety as a photocatalytically relevant `defect'. We exploit this knowledge for the rational design of a carbon nitride polymer populated with cyanamide groups, yielding a material with 12 and 16 times the hydrogen evolution rate and apparent quantum efficiency (400 nm), respectively, compared with the unmodified melon. Computational modelling and material characterization suggest that this moiety improves coordination (and, in turn, charge transfer kinetics) to the platinum co-catalyst and enhances the separation of the photogenerated charge carriers. The demonstrated knowledge transfer for rational catalyst design presented here provides the conceptual framework for engineering high-performance heptazine-based photocatalysts.

  18. Highly Efficient Quantum Sieving in Porous Graphene-like Carbon Nitride for Light Isotopes Separation

    Science.gov (United States)

    Qu, Yuanyuan; Li, Feng; Zhou, Hongcai; Zhao, Mingwen

    2016-01-01

    Light isotopes separation, such as 3He/4He, H2/D2, H2/T2, etc., is crucial for various advanced technologies including isotope labeling, nuclear weapons, cryogenics and power generation. However, their nearly identical chemical properties made the separation challenging. The low productivity of the present isotopes separation approaches hinders the relevant applications. An efficient membrane with high performance for isotopes separation is quite appealing. Based on first-principles calculations, we theoretically demonstrated that highly efficient light isotopes separation, such as 3He/4He, can be reached in a porous graphene-like carbon nitride material via quantum sieving effect. Under moderate tensile strain, the quantum sieving of the carbon nitride membrane can be effectively tuned in a continuous way, leading to a temperature window with high 3He/4He selectivity and permeance acceptable for efficient isotopes harvest in industrial application. This mechanism also holds for separation of other light isotopes, such as H2/D2, H2/T2. Such tunable quantum sieving opens a promising avenue for light isotopes separation for industrial application. PMID:26813491

  19. Mechanical and Structural Properties of Graphene-like Carbon Nitride Sheets

    CERN Document Server

    de Sousa, J M; Perim, E; Bizao, R A; Galvao, Douglas S

    2016-01-01

    Carbon nitride-based nanostructures have attracted special attention (from theory and experiments) due to their remarkable electromechanical properties. In this work we have investigated the mechanical properties of some graphene-like carbon nitride membranes through fully atomistic reactive molecular dynamics simulations. We have analyzed three different structures of these CN families, the so-called graphene-based g-CN, triazine-based g-C3N4 and heptazine-based g-C3N4. The stretching dynamics of these membranes was studied for deformations along their two main axes and at three different temperatures: 10K, 300K and 600K. We show that g-CN membranes have the lowest ultimate fracture strain value, followed by heptazine-based and triazine-based ones, respectively. This behavior can be explained in terms of their differences in terms of density values, topologies and types of chemical bonds. The dependency of the fracture patterns on the stretching directions is also discussed.

  20. Carbon nitride nanotubulite densely-packed and well-aligned tubular nanostructures

    Science.gov (United States)

    Suenaga, K.; Johansson, M. P.; Hellgren, N.; Broitman, E.; Wallenberg, L. R.; Colliex, C.; Sundgren, J.-E.; Hultman, L.

    1999-02-01

    Tubular carbon nitride (CN x, x=0.01-0.32) nanoparticles were successfully synthesized by d.c. magnetron sputtering. These tubes were grown in a highly packed form perpendicularly on a sodium chloride substrate. Their number density is estimated to be ˜1×10 4 per μm 2 and is constant over macroscopic regions. Sub-nanometer scale chemical mapping shows that the nitrogen to carbon atomic ratio is rather constant across these tubes. This successful synthesis of a nanotubulite - made of a rather compact aggregation of tubular nanoparticles - could facilitate experimental approaches to measure mechanical or electrical transport properties of such nanotubes and to open the way to variable nanotube applications.

  1. Electronic structures of an (8, 0) boron nitride/carbon nanotube heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Liu Hongxia; Zhang Heming; Song Jiuxu [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Zhang Zhiyong, E-mail: liuhongxia_xidian@126.co [Information Science and Technology Institution, Northwest University, Xi' an 710069 (China)

    2010-01-15

    The electronic structure of the heterojunction is the foundation of the study on its working mechanism. Models of the heterojunctions formed by an (8, 0) boron nitride nanotube and an (8, 0) carbon nanotube with C-B or C-N interface have been established. The structures of the above heterojunctions were optimized with first-principle calculations based on density functional theory. The rearrangements of the heterojunctions concentrate mainly on their interfaces. The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the heterojunctions distribute in the carbon nanotube section. As the band offsets of the above heterojunctions are achieved with the average bond energy method, the band structure is plotted. (semiconductor materials)

  2. Superior Current Carrying Capacity of Boron Nitride Encapsulated Carbon Nanotubes with Zero-Dimensional Contacts.

    Science.gov (United States)

    Huang, Jhao-Wun; Pan, Cheng; Tran, Son; Cheng, Bin; Watanabe, Kenji; Taniguchi, Takashi; Lau, Chun Ning; Bockrath, Marc

    2015-10-14

    We report fabrication and characterization of hexagonal boron nitride (hBN)-encapsulated carbon nanotube (CNT) field effect transistors, which are coupled to electrical leads via zero-dimensional contacts. Device quality is attested by the ohmic contacts and observation of Coulomb blockade with a single periodicity in small bandgap semiconducing nanotubes. Surprisingly, hBN-encapsulated CNT devices demonstrate significantly enhanced current carrying capacity; a single-walled CNT can sustain >180 μA current or, equivalently, a current density of ∼2 × 10(10) A/cm(2), which is a factor of 6-7 higher than devices supported on SiO2 substrates. Such dramatic enhancement of current carrying capacity arises from the high thermal conductivity of hBN and lower hBN-CNT interfacial thermal resistance and has implications for carbon electronic applications.

  3. In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

    2011-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  4. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    P N Vishwakarma; V Prasad; S V Subramanyam; V Ganesan

    2005-10-01

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM data shows surface roughness of carbon films depending on preparation temperatures. The surface roughness increases with decrease in preparation temperature. Also some nucleating islands were seen on the samples prepared at 900°C, which are not present on the films prepared at 700°C. Detailed analysis of these islands reveals distorted graphitic lattice arrangement. So we believe these islands to be nucleating graphitic. Power spectrum density (PSD) analysis of the carbon surface indicates a transition from the nonlinear growth mode to linear surface-diffusion dominated growth mode resulting in a relatively smoother surface as one moves from low preparation temperature to high preparation temperature. The amorphous carbon films deposited over a rough quartz substrate reveal nucleating diamond like structures. The density of these nucleating diamond like structures was found to be independent of substrate temperature (700–900°C).

  5. Hard Carbon Films Deposited under Various Atmospheres

    Science.gov (United States)

    Wei, M.-K.; Chen, S.-C.; Wu, T. C.; Lee, Sanboh

    1998-03-01

    Using a carbon target ablated with an XeCl-excimer laser under various gas atmospheres at different pressures, hard carbon was deposited on silicon, iron and tungsten carbide substrates. The hardness, friction coefficient, and wear rate of the film against steel are better than pure substrate material, respectively, so that it has potential to be used as a protective coating for micromechanical elements. The influences of gas pressure, gas atmosphere, and power density of laser irradiation on the thermal stability of film were analyzed by means of Raman-spectroscope, time-of-flight method, and optical emission spectrum. It was found that the film deposited under higher pressure has less diamond-like character. The film deposited under rest gas or argon atmosphere was very unstable and looked like a little graphite-like character. The film deposited at high vacuum (10-5 mbar rest gas) was the most stable and looked like the most diamond-like character. The film deposited at higher power density was more diamond-like than that at lower power density.

  6. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  7. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Zobelli, A

    2007-10-15

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  8. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers.

    Science.gov (United States)

    Kim, Heesuk; Colavita, Paula E; Metz, Kevin M; Nichols, Beth M; Sun, Bin; Uhlrich, John; Wang, Xiaoyu; Kuech, Thomas F; Hamers, Robert J

    2006-09-12

    We demonstrate that photochemical functionalization can be used to functionalize and photopattern the surface of gallium nitride crystalline thin films with well-defined molecular and biomolecular layers. GaN(0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene (C=C) group when illuminated with 254 nm light. Using a bifunctional molecule with an alkene group at one end and a protected amine group at the other, this process can be used to link the alkene group to the surface, leaving the protected amine exposed. Using a simple contact mask, we demonstrate the ability to directly pattern the spatial distribution of these protected amine groups on the surface with a lateral resolution of <12 mum. After deprotection of the amines, single-stranded DNA oligonucleotides were linked to the surface using a bifunctional cross-linker. Measurements using fluorescently labeled complementary and noncomplementary sequences show that the DNA-modified GaN surfaces exhibit excellent selectivity, while repeated cycles of hybridization and denaturation in urea show good stability. These results demonstrate that photochemical functionalization can be used as an attractive starting point for interfacing molecular and biomolecular systems with GaN and other compound semiconductors.

  9. Localization and pair breaking parameter in superconducting molybdenum nitride thin films

    Science.gov (United States)

    Tsuneoka, Takuya; Makise, Kazumasa; Maeda, Sho; Shinozaki, Bunju; Ichikawa, Fusao

    2017-01-01

    We have investigated the superconductor-insulator transition in molybdenum nitride films prepared by deposition onto MgO substrates. It is indicated that the T c depression from ≈ 6.6 \\text{K} for thick films with increase of the normal state sheet resistance R\\text{sq}\\text{N} was well explained by the Finkel’stein formula from the localization theory. Present analysis suggests that the superconducting-insulator transition occurs at a critical sheet resistance {{R}\\text{c}}≈ 2 \\text{k} Ω . It is found that the {{R}\\text{sq}}(T) above {{R}\\text{c}} shows different characteristics of {{R}\\text{sq}}(T)={{R}\\text{sq,0}}-A\\ln T and {{R}\\text{sq}}(T)\\propto \\exp ≤ft[{≤ft({{T}0}/T\\right)}1/2}\\right] in the regions {{R}\\text{c}}\\text{sq}\\text{N}{{R}\\text{Q}} , respectively, where {{R}\\text{sq,0}} is the classical residual resistance and A is a constant. The excess conductance {{σ\\prime}{}(T) due to thermal fluctuation has been analyzed by the sum of the Aslamazov-Larkin and Maki-Thompson correction terms with use of the pair breaking parameter δ in the latter term. The sum agrees well with the data, although the experimental results of the R\\text{sq}\\text{N} dependence of δ , that is, δ \\propto {{≤ft(R\\text{sq}\\text{N}\\right)}≈ 1.7} shows the disagreement with a linear relation δ \\propto ≤ft(R\\text{sq}\\text{N}\\right) derived from the localization theory.

  10. Oxygen- and Lithium-Doped Hybrid Boron-Nitride/Carbon Networks for Hydrogen Storage.

    Science.gov (United States)

    Shayeganfar, Farzaneh; Shahsavari, Rouzbeh

    2016-12-20

    Hydrogen storage capacities have been studied on newly designed three-dimensional pillared boron nitride (PBN) and pillared graphene boron nitride (PGBN). We propose these novel materials based on the covalent connection of BNNTs and graphene sheets, which enhance the surface and free volume for storage within the nanomaterial and increase the gravimetric and volumetric hydrogen uptake capacities. Density functional theory and molecular dynamics simulations show that these lithium- and oxygen-doped pillared structures have improved gravimetric and volumetric hydrogen capacities at room temperature, with values on the order of 9.1-11.6 wt % and 40-60 g/L. Our findings demonstrate that the gravimetric uptake of oxygen- and lithium-doped PBN and PGBN has significantly enhanced the hydrogen sorption and desorption. Calculations for O-doped PGBN yield gravimetric hydrogen uptake capacities greater than 11.6 wt % at room temperature. This increased value is attributed to the pillared morphology, which improves the mechanical properties and increases porosity, as well as the high binding energy between oxygen and GBN. Our results suggest that hybrid carbon/BNNT nanostructures are an excellent candidate for hydrogen storage, owing to the combination of the electron mobility of graphene and the polarized nature of BN at heterojunctions, which enhances the uptake capacity, providing ample opportunities to further tune this hybrid material for efficient hydrogen storage.

  11. Graphitic carbon nitride (g-C3N4) coated titanium oxide nanotube arrays with enhanced photo-electrochemical performance.

    Science.gov (United States)

    Sun, Mingxuan; Fang, Yalin; Kong, Yuanyuan; Sun, Shanfu; Yu, Zhishui; Umar, Ahmad

    2016-08-09

    Herein, we report the successful formation of graphitic carbon nitride coated titanium oxide nanotube array thin films (g-C3N4/TiO2) via the facile thermal treatment of anodized Ti sheets over melamine. The proportion of C3N4 and TiO2 in the composite can be adjusted by changing the initial addition mass of melamine. The as-prepared samples are characterized by several techniques in order to understand the morphological, structural, compositional and optical properties. UV-vis absorption studies exhibit a remarkable red shift for the g-C3N4/TiO2 thin films as compared to the pristine TiO2 nanotubes. Importantly, the prepared composites exhibit an enhanced photocurrent and photo-potential under both UV-vis and visible light irradiation. Moreover, the observed maximum photo-conversion efficiency of the prepared composites is 1.59 times higher than that of the pristine TiO2 nanotubes. The optical and electrochemical impedance spectra analysis reveals that the better photo-electrochemical performance of the g-C3N4/TiO2 nanotubes is mainly due to the wider light absorption and reduced impedance compared to the bare TiO2 nanotube electrode. The presented work demonstrates a facile and simple method to fabricate g-C3N4/TiO2 nanotubes and clearly revealed that the introduction of g-C3N4 is a new and innovative approach to improve the photocurrent and photo-potential efficiencies of TiO2.

  12. Improvements of stress controllability and radiation resistance by adding carbon to boron-nitride

    Energy Technology Data Exchange (ETDEWEB)

    Nakaishi, M.; Sugishima, K. (Fujitsu Limited, Advanced Technology Div., Nakahara-ku, Kawasaki 211 (JP)); Yamada, M. (Stanford Electronics Lab., Stanford Univ., Stanford, CA (US))

    1990-07-01

    The addition of an atom having different bonding radii to a matrix film is an effective method for changing the stress of the film. In a plasma-enhanced CVD of BN, it is difficult to obtain tensile stress except for extremely boron-rich films. The controllability of tensile stress in BN film was improved by introducing a small amount of carbon into the BN matrix, using plasma-enhanced CVD between 400{degrees} and 500{degrees}C. The authors have obtained transparent films with high Young's modulus and tensile stress. They report that the radiation resistance of BNC deposited at 400{degrees}C was improved five times better than that of BN deposited by low-pressure CVD at similar temperatures.

  13. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation

    Energy Technology Data Exchange (ETDEWEB)

    Roosta, Sara [Molecular Simulation Research Laboratory, Department of Chemistry, Iran University of Science & Technology, Tehran (Iran, Islamic Republic of); Hashemianzadeh, Seyed Majid, E-mail: hashemianzadeh@iust.ac.ir [Molecular Simulation Research Laboratory, Department of Chemistry, Iran University of Science & Technology, Tehran (Iran, Islamic Republic of); Ketabi, Sepideh, E-mail: sepidehketabi@yahoo.com [Department of Chemistry, East Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were − 4.128 kcal mol{sup −1} and − 2457.124 kcal mol{sup −1} respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was − 281.937 kcal mol{sup −1} which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (− 374.082 and − 245.766 kcal mol{sup −1}) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. - Highlights: • Solubility of cisplatin@ boron-nitride nanotube is larger than cisplatin@ carbon nanotube. • Boron- nitride nanotube complexes have larger electrostatic contribution in solvation free energy. • Complexation free energies confirm encapsulation of drug into the nanotubes in aqueous solution. • Boron- nitride nanotubes are appropriate drug delivery systems compared with carbon nanotubes.

  14. Production of Metal-Free Composites Composed of Graphite Oxide and Oxidized Carbon Nitride Nanodots and Their Enhanced Photocatalytic Performances.

    Science.gov (United States)

    Kim, Seung Yeon; Oh, Junghoon; Park, Sunghee; Shim, Yeonjun; Park, Sungjin

    2016-04-01

    A novel metal-free composite (GN) composed of two types of carbon-based nanomaterials, graphite oxide (GO) and 2D oxidized carbon nitride (OCN) nanodots was produced. Chemical and morphological characterizations reveal that GN contains a main component of GO with well-dispersed 2D OCN nanodots. GN shows enhanced photocatalytic performance for degrading an organic pollutant, Rhodamine B, under visible light.

  15. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  16. Carbon nitride supported copper nanoparticles: light-induced electronic effect of the support for triazole synthesis

    Science.gov (United States)

    Nandi, Debkumar; Taher, Abu; Ul Islam, Rafique; Siwal, Samarjeet; Choudhary, Meenakshi; Mallick, Kaushik

    2016-11-01

    The composite framework of graphitic carbon nitride (gCN) supported copper nanoparticle can act as a high-performance photoreactor for the synthesis of 1,2,3-triazole derivatives under light irradiation in the absence of alkaline condition. The photoactivity of gCN originates from an electron transition from the valence band to the conduction band, in the presence of photon energy, and the hot electron acts as a scavenger of the terminal proton of the alkyne molecule to facilitate the formation of copper acetanilide complex. In this study, we have performed the experiment under a different photonic environment, including dark condition, and in the presence and absence of base. A comparative study was also executed using Cu-TiO2 system, as a reference material, in the support of our proposed mechanism. The recycling performance and the photocorrosion effect of the catalyst have also been reported in this study.

  17. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ram Sevak, E-mail: singh915@gmail.com [Department of Physics, National Institute of TechnologyKurukshetra 136119 (Haryana) (India)

    2015-11-15

    Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  18. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

    Directory of Open Access Journals (Sweden)

    Ram Sevak Singh

    2015-11-01

    Full Text Available Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0, armchair (3, 3, and chiral (4, 2 structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

  19. Harvesting solar light with crystalline carbon nitrides for efficient photocatalytic hydrogen evolution

    KAUST Repository

    Bhunia, Manas Kumar

    2014-08-14

    Described herein is the photocatalytic hydrogen evolution using crystalline carbon nitrides (CNs) obtained by supramolecular aggregation followed by ionic melt polycondensation (IMP) using melamine and 2,4,6-triaminopyrimidine as a dopant. The solid state NMR spectrum of 15N-enriched CN confirms the triazine as a building unit. Controlling the amount and arrangements of dopants in the CN structure can dramatically enhance the photocatalytic performance for H2 evolution. The polytriazine imide (PTI) exhibits the apparent quantum efficiency (AQE) of 15% at 400 nm. This method successfully enables a substantial amount of visible light to be harvested for H2 evolution, and provides a promising route for the rational design of a variety of highly active crystalline CN photocatalysts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Metal-free hybrids of graphitic carbon nitride and nanodiamonds for photoelectrochemical and photocatalytic applications.

    Science.gov (United States)

    Zhou, Li; Zhang, Huayang; Guo, Xiaochen; Sun, Hongqi; Liu, Shaomin; Tade, Moses O; Wang, Shaobin

    2017-05-01

    Graphitic carbon nitride (g-C3N4) has been considered as a metal-free, cost-effective, eco-friendly and efficient catalyst for various photoelectrochemical applications. However, compared to conventional metal-based photocatalysts, its photocatalytic activity is still low because of the low mobility of carriers restricted by the polymer nature. Herein, a series of hybrids of g-C3N4 (GCN) and nanodiamonds (NDs) were synthesized using a solvothermal method. The photoelectrochemical performance and photocatalytic efficiency of the GCN/NDs were investigated by means of the generation of photocurrent and photodegradation of methylene blue (MB) solutions under UV-visible light irradiations. In this study, the sample of GCN/ND-33% derived from 0.1g GCN and 0.05g NDs displayed the highest photocatalytic activity and the strongest photocurrent density. The mechanism of enhanced photoelectrochemical and photocatalytic performances was also discussed.

  1. Nickel Oxide and Nickel Co-doped Graphitic Carbon Nitride Nanocomposites and its Octylphenol Sensing Application

    KAUST Repository

    Gong, Wanyun

    2015-11-16

    Nickel oxide and nickel co-doped graphitic carbon nitride (NiO-Ni-GCN) nanocomposites were successfully prepared by thermal treatment of melamine and NiCl2 6H2O. NiO-Ni-GCN nanocomposites showed superior electrochemical catalytic activity for the oxidation of octylphenol to pure GCN. A detection method of octylphenol in environmental water samples was developed based at NiO-Ni-GCN nanocomposites modified electrode under infrared light irradiation. Differential pulse voltammetry was used as the analytic technique of octylphenol, exhibiting stable and specific concentration-dependent oxidation signal in the presence of octylphenol in the range of 10nM to 1μM and 1μM to 50μM, with a detection limit of 3.3nM (3S/N). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Boron Nitride Coated Carbon Nanotube Arrays with Enhanced Compressive Mechanical Property

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Tan, Dunlin; Zhang, Bowei; Tok, Alfred Iing Yoong; Teo, Edwin Hang Tong

    Vertically aligned carbon nanotube (CNT) array is one of the most promising energy dissipating materials due to its excellent temperature invariant mechanical property. However, the CNT arrays with desirable recoverability after compression is still a challenge. Here, we report on the mechanical enhancement of the CNT arrays reinforced by coating with boron nitride (BN) layers. These BN coated CNT (BN/CNT) arrays exhibit excellent compressive strength and recoverability as compared to those of the as-prepared CNT arrays which totally collapsed after compression. In addition, the BN coating also provides better resistance to oxidation due to its intrinsic thermal stability. This work presented here opens a new pathway towards tuning mechanical behavior of any arbitrary CNT arrays for promising potential such as damper, vibration isolator and shock absorber applications.

  3. Facile fabrication of ordered mesoporous graphitic carbon nitride for RhB photocatalytic degradation

    Science.gov (United States)

    Luo, Lei; Zhang, Anfeng; Janik, Michael J.; Li, Keyan; Song, Chunshan; Guo, Xinwen

    2017-02-01

    Ordered mesoporous graphitic carbon nitrides were prepared by directly condensing the uniform mixtures of melamine and KIT-6. After removal of the KIT-6 sacrificial template, the carbon nitrides were characterized with TEM, N2 physical adsorption, XRD, FT-IR, XPS, UV-vis and PL spectrometries, and tested for their RhB photocatalytic degradation activity. Together, these characterizations confirmed the as-prepared tunable mesoporous materials with enhanced charge separation efficiency and superior photocatalytic performance. Compared with a conventional bulk g-C3N4, ordered mesoporous g-C3N4 exhibits a larger specific surface area of 279.3 m2/g and a pore size distribution about 4.0 nm and 13.0 nm. Meanwhile, the reduced bandgap energy of 2.77 eV and lower photogenerated electron-hole pair recombination frequency were evidenced by UV-Vis and PL spectra. The RhB photocatalytic degradation activity maximizes with a mass ratio of KIT-6/melamine of 80% (KCN80), and the kinetic constant reaches 0.0760 min-1 which is 16 times higher than that of the bulk sample. Reusability of KCN80 was demonstrated by a lack of evident deactivation after three consecutive reaction periods. The direct condensation of the KIT-6 and melamine mixture does not require pre-casting of the precursor into the pore system of the templates. Owing to its high product yield, improved SBET, reduced bandgap energy and limited charge recombination, the facile-prepared ordered mesoporous g-C3N4 is a practical candidate for further modification.

  4. Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance

    Science.gov (United States)

    Zhang, Yu; Li, Min; Gu, Yizhuo; Wang, Shaokai; Zhang, Zuoguang

    2017-04-01

    Space aircrafts circling in low earth orbit are suffered from highly reactive atomic oxygen (AO). To shield AO, a flexible thin film with 80 wt.% hexagonal boron nitride (h-BN) and h-BN/epoxy film were fabricated through vacuum filtration and adding nanofibrillated cellulose fibers. H-BN nanosheets were hydroxylated for enhancing interaction in the films. Mass loss and erosion yield at accumulated AO fluence about 3.04 × 1020 atoms/cm2 were adopted to evaluate the AO resistance properties of the films. A carpet-like rough surface, chemical oxidations and change in crystal structure of h-BN were found after AO treatment, and the degrading mechanism was proposed. The mass loss and erosion yield under AO attack were compared between h-BN film and h-BN/epoxy film, and the comparison was also done for various types of shielding AO materials. Excellent AO resistance property of h-BN film is shown, and the reasons are analyzed.

  5. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  6. Stepwise Synthesis of Mesoporous Carbon Nitride Functionalized by Melamine Based Dendrimer Amines for Adsorption of CO2 and CH4

    Directory of Open Access Journals (Sweden)

    Mansoor Anbia

    2016-12-01

    Full Text Available In this study, a novel solid dendrimer amine (hyperbranched polymers was prepared using mesoporous carbon nitride functionalized by melamine based dendrimer amines. This adsorbent was denoted MDA-MCN-1. The process was stepwise synthesis and hard-templating method using mesoporous silica SBA-15 as a template. Cyanuric chloride and N,N-diisopropylethylamine (DIPEA, Merck were used for functionalization of the MCN-1. Fourier transform infrared spectroscopy (FT-IR, Nitrogen adsorption-desorption analysis, Small Angle X-ray Scattering (SAXS, X-ray diffraction (XRD and thermogravimetric analysis (TGA were used for characterization of the adsorbent. This material was used for carbon dioxide gas (CO2 and methane gas (CH4 adsorption at high pressure (up to 20 bar and room temperature. The volumetric method was used for the tests of the gas adsorption. The CO2 adsorption capacity of modified mesoporous carbon nitrides was about 4 mmol CO2 per g adsorbent. The methane adsorption capacity of this material was less than that CO2. Modified Mesoporous Carbon Nitride adsorbed about 3.52 mmol CH4 /g adsorbent. The increment of melamine based dendrimer generation on mesoporous surface increased adsorption capacity of both carbon dioxide and methane gases. According to the results obtained, the solid dendrimer amines, (MDA-MCN-1, performs excellently for CO2 and CH4 capture from flow gases and CO2 and CH4 storage.

  7. Characterisation of titanium nitride films obtained by metalorganic chemical vapor deposition (MOCVD); Caracterizacao de filmes de nitreto de titanio obtidos por MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pillis, M.F., E-mail: mfpillis@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Franco, A.C. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Araujo, E.G. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Sacilotti, M. [Universidade Federal de Pernambuco (IF/UFPE), Recife, PE (Brazil). Inst. de Fisica; Fundacao de Amparo a Ciencia e Tecnologia de Pernambuco (FACEPE), Recife, PE (Brazil)

    2009-07-01

    Ceramic coatings have been widely used as protective coating to improve the life of cutting tools, for corrosion protection and in microelectronics, optical and medical areas. Transition metals nitrides are of special interest due to its high hardness and thermal stability. In this work thin films of titanium nitride were obtained by MOCVD (metalorganic chemical vapor deposition) process. The tests were carried out for 1h at 700 deg C under 80 and 100 mbar of pressure. The characterization was made by using scanning electron microscopy coupled with dispersive energy analysis, and X-ray diffraction. Preliminary results suggested that Ti{sub 2}N phase was formed and that the growth rate varied between 4 and 13 nm/min according to the process parameter considered. (author)

  8. Numerical investigation of sputtering power effect on nano-tribological properties of tantalum-nitride film using molecular dynamics simulation

    Science.gov (United States)

    Firouzabadi, S. S.; Dehghani, K.; Naderi, M.; Mahboubi, F.

    2016-03-01

    In the present work, surface profile of tantalum-nitride films, deposited with different sputtering power is analyzed using atomic force microscopy (AFM) in order to find out the effect of sputtering power density on the surface properties. In this regard, micron size tantalum nitride films were deposited using reactive magnetron sputtering system with sputtering power density of 1.5-3 W/cm2 in argon environment mixed with nitrogen. The process was then simulated numerically using molecular dynamics simulation (MD) and Morse interatomic potential in order to study the mechanism of surface roughness variation with sputtering power. According to experimental results, with increasing the sputtering power density from 1.5 to 3, the surface roughness decreased at first followed by an increase. The reason of this behavior was investigated using MD simulation. In this regard, the effect of sputtering power was attributed into two different phenomena: (i) the deposition rate and (ii) the incident-atom energy. Simulation was performed at different deposition rates from 33 to 666 atoms/ps and different sputtered atom energies from .31 to 7.67 eV. It is found that increasing the incident-atom energy causes the atoms to move along the surface and reduces the surface roughness. In contrast, increasing the deposition rate restricted the surface mobility of atoms and roughened the surface. It is also indicated that an increase in the sputtering power cannot increase the adatoms kinetic energy continuously and so the surface diffusion of atoms. Therefore, there is an optimum value for minimum roughness of surface in sputter deposition of tantalum-nitride films which is in agreement with simulation findings.

  9. Buckling instability in amorphous carbon films

    Science.gov (United States)

    Zhu, X. D.; Narumi, K.; Naramoto, H.

    2007-06-01

    In this paper, we report the buckling instability in amorphous carbon films on mirror-polished sapphire (0001) wafers deposited by ion beam assisted deposition at various growth temperatures. For the films deposited at 150 °C, many interesting stress relief patterns are found, which include networks, blisters, sinusoidal patterns with π-shape, and highly ordered sinusoidal waves on a large scale. Starting at irregular buckling in the centre, the latter propagate towards the outer buckling region. The maximum length of these ordered patterns reaches 396 µm with a height of ~500 nm and a wavelength of ~8.2 µm. However, the length decreases dramatically to 70 µm as the deposition temperature is increased to 550 °C. The delamination of the film appears instead of sinusoidal waves with a further increase of the deposition temperature. This experimental observation is correlated with the theoretic work of Crosby (1999 Phys. Rev. E 59 R2542).

  10. Magnetic properties of gadolinium and carbon co-doped gallium nitride

    Science.gov (United States)

    Syed Kaleemullah, N.; Ramsubramanian, S.; Mohankumar, R.; Munawar Basha, S.; Rajagopalan, M.; Kumar, J.

    2017-01-01

    Investigations have been carried out to study the ferromagnetic properties of Gadolinium (Gd) Carbon (C) co-doped wurtzite Gallium Nitride (GaN) using full-potential linear augmented plane wave (FP-LAPW) method within the density functional theory. The system shows half-metallic nature when single Gd is substituted in Ga36N36 supercell. The presence of carbon in GaN supercell is found to generate weak magnetic moment (Ms) in the neighbouring atoms. When Carbon is codoped in the Gd-GaN, it increased the total magnetic moment of the system (Mtot). The cause of ferromagnetism in the Gd and C co-doped GaN has been explained by Zener's p-d exchange mechanism. The role of defects in the magnetic property of this system is also investigated. The results indicate the gallium vacancy influences the magnetic moment of the Gd and C codoped GaN more than the nitrogen vacancy. The presence of holes is effective than electrons in achieving the ferromagnetism in the considered system.

  11. Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li Junsheng, E-mail: charlesljs@163.com [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha, 410073 (China); Zhang Changrui; Li Bin [State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha, 410073 (China)

    2011-06-15

    Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 deg. C-1000 deg. C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 deg. C, the deposition rate reached a maximum (2.5 {mu}m/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 deg. C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 deg. C, while hexagonal BN coatings were deposited above 1100 deg. C. A penetration of carbon element from the fibers to the coatings was observed.

  12. Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation.

    Science.gov (United States)

    Roosta, Sara; Hashemianzadeh, Seyed Majid; Ketabi, Sepideh

    2016-10-01

    Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were -4.128kcalmol(-1) and -2457.124kcalmol(-1) respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was -281.937kcalmol(-1) which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (-374.082 and -245.766kcalmol(-1)) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution.

  13. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Jonghoon [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)]. E-mail: jhoon6@hotmail.com; Ma, James [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Becker, Michael F. [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Keto, John W. [Department of Physics, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kovar, Desiderio [Department of Mechanical Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2007-06-25

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10{sup -2} Pa (4.5 x 10{sup -4} Torr) of 99.9% purity.

  14. Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

    Science.gov (United States)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y. X.

    2006-01-01

    Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N2 mixture. The effects of N2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24° to 49.6°. To some extent, the silicon nitride films deposited are hydrophilic in nature.

  15. Metal-functionalized single-walled graphitic carbon nitride nanotubes: a first-principles study on magnetic property

    Directory of Open Access Journals (Sweden)

    Shenoy Vivek

    2011-01-01

    Full Text Available Abstract The magnetic properties of metal-functionalized graphitic carbon nitride nanotubes were investigated based on first-principles calculations. The graphitic carbon nitride nanotube can be either ferromagnetic or antiferromagnetic by functionalizing with different metal atoms. The W- and Ti-functionalized nanotubes are ferromagnetic, which are attributed to carrier-mediated interactions because of the coupling between the spin-polarized d and p electrons and the formation of the impurity bands close to the band edges. However, Cr-, Mn-, Co-, and Ni-functionalized nanotubes are antiferromagnetic because of the anti-alignment of the magnetic moments between neighboring metal atoms. The functionalized nanotubes may be used in spintronics and hydrogen storage.

  16. Vanadium nitride quantum dot/nitrogen-doped microporous carbon nanofibers electrode for high-performance supercapacitors

    Science.gov (United States)

    Wu, Yage; Ran, Fen

    2017-03-01

    In this article, vanadium nitride quantum dot/nitrogen-doped microporous carbon nanofibers (VNQD/CNF) is developed by a method of combination of electrostatic spinning and high-temperature calcination under the atmosphere of NH3: N2 = 3: 2 for high performance supercapacitors. VNQD dispersing into CNF, enrichment of N atom doped in carbon bulk, and abundant porous structure not only prevent the growth and aggregation of VN nanoparticles, improve electrical conductivity, wettability, and stability of the electrode materials, but also enhance fast migration of electrolyte ions during the electrochemical process. Thus, VNQD/CNF exhibits a high specific capacitance of 406.5 F g-1 at 0.5 A g-1 and a good rate capability with a capacitance retention of 75.1% at 5.0 A g-1. Additionally, VNQD/CNF as a negative electrode are combined with Ni(OH)2 as a positive electrode to fabricate the hybrid supercapacitor of VNQD/CNF//Ni(OH)2. Remarkably, at a power density of 774.6 W kg-1, the supercapacitor device delivers an ultrahigh energy density of 31.2 Wh kg-1.

  17. Enhanced visible light photocatalytic degradation of Rhodamine B over phosphorus doped graphitic carbon nitride

    Science.gov (United States)

    Chai, Bo; Yan, Juntao; Wang, Chunlei; Ren, Zhandong; Zhu, Yuchan

    2017-01-01

    Phosphorus doped graphitic carbon nitride (g-C3N4) was easily synthesized using ammonium hexafluorophosphate (NH4PF6) as phosphorus source, and ammonium thiocyanate (NH4SCN) as g-C3N4 precursor, through a direct thermal co-polycondensation procedure. The obtained phosphorus doped g-C3N4 was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectra (FTIR), UV-vis diffuse reflectance absorption spectra (UV-DRS), photoelectrochemical measurement and photoluminescence spectra (PL). The photocatalytic activities of phosphorus doped g-C3N4 samples were evaluated by degradation of Rhodamine B (RhB) solution under visible light irradiation. The results showed that the phosphorus doped g-C3N4 had a superior photocatalytic activity than that of pristine g-C3N4, attributing to the phosphorus atoms substituting carbon atoms of g-C3N4 frameworks to result in light harvesting enhancement and delocalized π-conjugated system of this copolymer, beneficial for the increase of photocatalytic performance. The photoelectrochemical measurements also verified that the charge carrier separation efficiency was promoted by phosphorus doping g-C3N4. Moreover, the tests of radical scavengers demonstrated that the holes (h+) and superoxide radicals (rad O2-) were the main active species for the degradation of RhB.

  18. Synthesis of silicon carbide-silicon nitride composite ultrafine particles using a carbon dioxide laser

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Masaaki; Maniette, Yves; Nakata, Yoshinori; Okutani, Takeshi (Government Industrial Development Lab., Hokkaido, Sapporo (Japan))

    1993-05-01

    The synthesis and the structure of silicon carbide-silicon nitride (SiC-Si[sub 3]N[sub 4]) composite ultrafine particles have been studied. SiC-Si[sub 3]N[sub 4] composite ultrafine particles were prepared by irradiating a SiH[sub 4], C[sub 2]H[sub 4], and NH[sub 3] gas mixture with a CO[sub 2] laser at atmospheric pressure. The composition of composite powders changed with the reactant gas flow rate. The carbon and nitrogen content of the powder could be controlled in a wide range from 0 to 30 wt%. The composite powder, which contained 25.3 wt% carbon and 5.8 wt% nitrogen, had a [beta]-SiC structure. As the nitrogen content increased, SiC decreased and amorphous phase, Si[sub 3]N[sub 4], Si appeared. The results of XPS and lattice constant measurements suggested that Si, C, and N atoms were intimately mixed in the composite particles.

  19. Crystallographic investigation of aluminium nitride thin films on stainless steel foil for highly efficient piezoelectric vibration energy harvesters

    Science.gov (United States)

    Moriwaki, N.; Minh, L. V.; Ohigashi, R.; Shimada, O.; Kitayoshi, H.; Kuwano, H.

    2016-11-01

    This study reports piezoelectric properties and crystallographic microstructures of aluminium nitride (AlN, wurtzite structure) thin films on 50 μm thick stainless steel foil. The transverse piezoelectric coefficient d31f and e31f of 10 pm thick AlN films were estimated as -1.42 ± 0.08 μm/V and -0.48 ± 0.03 C/m2 from a tip displacement of the piezoelectric cantilevers. Dielectric constant s33 was measured as 10.5 ± 1.0. An electron beam diffraction pattern by a high-resolution transmission electron microscope and x-ray diffraction pattern showed that abundance ratio of the orientation such as , and of AlN crystal on stainless steel foils increased with increasing thickness.

  20. The stability of DLC film on nitrided CoCrMo alloy in phosphate buffer solution

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, T.F.; Liu, B.; Wu, B.J.; Liu, J.; Sun, H.; Leng, Y.X., E-mail: yxleng@263.net; Huang, N.

    2014-07-01

    CoCrMo alloy is often used as the material for metal artificial joint, but metal debris and metal ions are the main concern on tissue inflammation or tissue proliferation for metal prosthesis. In this paper, nitrogen ion implantation and diamond like carbon (DLC) film composite treatment was used to reduce the wear and ion release of biomedical CoCrMo substrate. The mechanical properties and stability of N-implanted/DLC composite layer in phosphate buffer solution (PBS) was evaluated to explore the full potential of N-implanted/DLC composite layer as an artificial joint surface modification material. The results showed that the DLC film on N implanted CoCrMo (N-implanted/DLC composite layer) had the higher surface hardness and wear resistance than the DLC film on virgin CoCrMo alloy, which was resulted from the strengthen effect of the N implanted layer on CoCrMo alloy. After 30 days immersion in PBS, the structure of DLC film on virgin CoCrMo or on N implanted CoCrMo had no visible change. But the adhesion and corrosion resistance of DLC on N implanted CoCrMo (N-implanted/DLC composite layer) was weakened due to the dissolution of the N implanted layer after 30 days immersion in PBS. The adhesion reduction of N-implanted/DLC composite layer was adverse for in vivo application in long term. So researcher should be cautious to use N implanted layer as an inter-layer for increasing CoCrMo alloy load carrying capacity in vivo environment.

  1. Polymeric Graphitic Carbon Nitride Doped with CuO Dispersed on Dealuminated Clinoptilolite (CuO/HCP): Synthesis and Characterisation

    OpenAIRE

    Saheed Olalekan Sanni; Omoruyi Gold Idemudia

    2015-01-01

    CuO dispersed on dealuminated clinoptilolite (CuO/HCP) and further doped with polymeric graphitic carbon nitride (CuO/HCP-g-C3N4) was synthesized through 2 facile routes: precipitation method for CuO/HCP and impregnation through ultrasonication method for the hybrid composite material. The hybrid composite material crystalline phase, surface morphology, and structural and thermal properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-r...

  2. A statistical mechanics model of carbon nanotube macro-films

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Carbon nanotube macro-films are two-dimensional films with micrometer thickness and centimeter by centimeter in-plane dimension.These carbon nanotube macroscopic assemblies have attracted significant attention from the material and mechanics communities recently because they can be easily handled and tailored to meet specific engineering needs.This paper reports the experimental methods on the preparation and characterization of single-walled carbon nanotube macro-films,and a statistical mechanics model on ...

  3. Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates.

    Science.gov (United States)

    Spee, D A; van der Werf, C H M; Rath, J K; Schropp, R E I

    2011-09-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 degrees C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si-H peak position of 2180 cm(-1) in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with a refractive index of 1.97 at a wavelength of 632 nm and an extinction coefficient of 0.002 at 400 nm, this suggests that a transparent high density silicon nitride material has been made below 110 degrees C, which is compatible with polymer films and is expected to have a high impermeability. To confirm the compatibility with polymer films a silicon nitride layer was deposited on poly(glycidyl methacrylate) made by initiated chemical vapour deposition, resulting in a highly transparent double layer.

  4. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  5. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    Science.gov (United States)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  6. ENHANCING ADHESION OF TETRAHEDRAL AMORPHOUS CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuqing; Lin Yi; Wang Xiaoyan; Wang Yanwu; Wei Xinyu

    2005-01-01

    Objective The high energy ion bombardment technique is applied to enhancing the adhesion of the tetrahedral amorphous carbon (TAC) films deposited by the filtered cathode vacuum arc (FCVA). Methods The abrasion method, scratch method, heating and shaking method as well as boiling salt solution method is used to test the adhesion of the TAC films on various material substrates. Results The test results show that the adhesion is increased as the ion bombardment energy increases. However, if the bombardment energy were over the corresponding optimum value, the adhesion would be enhanced very slowly for the harder material substrates and drops quickly, for the softer ones. Conclusion The optimum values of the ion bombardment energy are larger for the harder materials than that for the softer ones.

  7. Thermal Conductivity of Carbon Nanotube Composite Films

    Science.gov (United States)

    Ngo, Quoc; Cruden, Brett A.; Cassell, Alan M.; Walker, Megan D.; Koehne, Jessica E.; Meyyappan, M.; Li, Jun; Yang, Cary Y.

    2004-01-01

    State-of-the-art ICs for microprocessors routinely dissipate power densities on the order of 50 W/sq cm. This large power is due to the localized heating of ICs operating at high frequencies, and must be managed for future high-frequency microelectronic applications. Our approach involves finding new and efficient thermally conductive materials. Exploiting carbon nanotube (CNT) films and composites for their superior axial thermal conductance properties has the potential for such an application requiring efficient heat transfer. In this work, we present thermal contact resistance measurement results for CNT and CNT-Cu composite films. It is shown that Cu-filled CNT arrays enhance thermal conductance when compared to as-grown CNT arrays. Furthermore, the CNT-Cu composite material provides a mechanically robust alternative to current IC packaging technology.

  8. Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

    Science.gov (United States)

    Choudhuri, Indrani; Kumar, Sourabh; Mahata, Arup; Rawat, Kuber Singh; Pathak, Biswarup

    2016-07-01

    High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices.High-temperature ferromagnetic materials with planar surfaces are promising candidates for spintronics applications. Using state-of-the-art density functional theory (DFT) calculations, transition metal (TM = Cr, Mn, and Fe) incorporated graphitic carbon nitride (TM@gt-C3N4) systems are investigated as possible spintronics devices. Interestingly, ferromagnetism and half-metallicity were observed in all of the TM@gt-C3N4 systems. We find that Cr@gt-C3N4 is a nearly half-metallic ferromagnetic material with a Curie temperature of ~450 K. The calculated Curie temperature is noticeably higher than other planar 2D materials studied to date. Furthermore, it has a steel-like mechanical stability and also possesses remarkable dynamic and thermal (500 K) stability. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N4 is as high as 137.26 μeV per Cr. Thereby, such material with a high Curie temperature can be operated at high temperatures for spintronics devices. Electronic supplementary information (ESI

  9. Formation of Silicon/Carbon Core-Shell Nanowires Using Carbon Nitride Nanorods Template and Gold Catalyst

    Directory of Open Access Journals (Sweden)

    Ilyani Putri Jamal

    2013-01-01

    Full Text Available In this experiment, silicon/carbon (Si/C core-shell nanowires (NWs were synthesized using gold nanoparticles (Au NPs coated carbon nitride nanorods (CN NRs as a template. To begin with, the Au NPs coated CN NRs were prepared by using plasma-enhanced chemical vapor deposition assisted with hot-wire evaporation technique. Fourier transform infrared spectrum confirms the C–N bonding of the CN NRs, while X-ray diffraction pattern indicates the crystalline structure of the Au NPs and amorphous structure of the CN NRs. The Au NPs coated CN NRs were thermally annealed at temperature of 800°C in nitrogen ambient for one hour to induce the growth of Si/C core-shell NWs. The growth mechanism for the Si/C core-shell NWs is related to the nitrogen evolution and solid-liquid-solid growth process which is a result of the thermal annealing. The formation of Si/C core-shell NWs is confirmed by electron spectroscopic imaging analysis.

  10. Preparation and Thermal Characterization of Diamond-Like Carbon Films

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; Yu Jun; WANG Jing; LIU Gui-Chang

    2009-01-01

    Diamond-like carbon (DLC) films are prepared on silicon substrates by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition. Raman spectroscopy indicates that the films have an amorphous structure and typical characteristics. The topographies of the films are presented by AFM images. Effective thermal conductivities of the films are measured using a nanosecond pulsed photothermal reflectance method. The results show that thermal conductivity is dominated by the microstructure of the films.

  11. Lifetime dependence of nitrided carbon stripper foils on sputter angle during N{sup +} ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sugai, I., E-mail: isao.Sugai@kek.jp [High Energy Accelerator Research Organization, Accelerator Laboratory, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Oyaizu, M. [High Energy Accelerator Research Organization, Institute of Particle and Nuclear Studies, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Takeda, Y. [High Energy Accelerator Research Organization, Accelerator Laboratory, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Kawakami, H. [High Energy Accelerator Research Organization, Institute of Particle and Nuclear Studies, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Kawasaki, K.; Hattori, T. [Department of Physics, Tokyo Institute of Technology, Ohokayama, Meguro, Tokyo 152-8550 (Japan); Kadono, T. [Department of Physics, University of Tokyo, Hongo, 7-3-1, Bunkyo, Tokyo 113-0033 (Japan)

    2015-09-01

    We fabricated high-lifetime thin nitride carbon stripper (NCS) foils with high nitrogen contents using ion-beam sputtering with reactive nitrogen gas and investigated the dependence of their lifetimes on the sputter angle. The nitrogen in carbon foils plays a critical role in determining their lifetime. Therefore, in order to investigate the effects of the nitrogen level in NCS foils on foil lifetime, we measured the sputtering yield for different sputter angles at a sputtering voltage of 10 kV while using carbon-based targets. We also measured the nitrogen-to-carbon thickness ratios of the foils using Rutherford backscattering spectrometry. The foils made at a sputter angle of 15° using a glassy amorphous carbon target exhibited an average increase of 200-fold in lifetime when compared to commercially available foils.

  12. Novel Hybrid Nanoparticles of Vanadium Nitride/Porous Carbon as an Anode Material for Symmetrical Supercapacitor

    Institute of Scientific and Technical Information of China (English)

    Yunlong Yang; Kuiwen Shen; Ying Liu; Yongtao Tan; Xiaoning Zhao; Jiayu Wu; Xiaoqin Niu; Fen Ran

    2017-01-01

    Hybrid materials of vanadium nitride and porous carbon nanoparticles (VN/PCNPs) were fabricated by a facile pyrolysis process of vanadium pentoxide (V2O5) xerogel and melamine at relatively low temperature of 800 ?C for supercapacitor application. The effects of the feed ratio of V2O5 to melamine (r), and nitrogen flow rate on the microstructure and electrochemical performance were also investigated. It was found that the size of the as-synthesized nanoparticles is about 20 nm. Both r value and N2 flow rate have enormous impacts on morphology and microstructure of the nanoparticle, which correspondingly determined the electrochemical performance of the material. The VN/C hybrid nanoparticles exhibited high capacitive properties, and a maximum specific capacitance of 255.0 F g-1 was achieved at a current density of 1.0 A g-1 in 2 M KOH aqueous electrolyte and the potential range from 0 to -1.15 V. In addition, symmetrical supercapacitor fabricated with the as-synthesized VN/PCNPs presents a high specific capacitance of 43.5 F g-1 at 0.5 A g-1 based on the entire cell, and an energy density of 8.0 Wh kg-1 when the power density was 575 W kg-1. Even when the power density increased to 2831.5 W kg-1, the energy density still remained 6.1 Wh kg-1.

  13. Lattice mismatch induced curved configurations of hybrid boron nitride-carbon nanotubes

    Science.gov (United States)

    Zhang, Jin

    2016-10-01

    A unique curved configuration is observed in freestanding hybrid boron nitride-carbon nanotubes (BN-CNTs) based on molecular dynamics simulations, which, in previous studies, was tacitly assumed as a straight configuration. The physical fundamentals of this phenomenon are explored by using the continuum mechanics theory, where the curved configuration of BN-CNTs is found to be induced by the bending effect due to the lattice mismatch between the C domain and the BN domain. In addition, our results show that the curvature of the curved BN-CNTs is determined by their radius and composition. The curvature of BN-CNTs decreases with growing radius of BN-CNTs and becomes ignorable when their radius is relatively large. A non-monotonic relationship is detected between the curvature and the composition of BN-CNTs. Specifically, the curvature of BN-CNTs increases with growing BN concentration when the molar fraction of BN atoms is smaller than a critical value 0.52, but decreases with growing BN concentration when the molar fraction of BN atoms is larger than this critical value.

  14. Ag nanoparticles loaded on porous graphitic carbon nitride with enhanced photocatalytic activity for degradation of phenol

    Science.gov (United States)

    Han, Zhenwei; Wang, Nan; Fan, Hai; Ai, Shiyun

    2017-03-01

    Highly efficient photocatalyst of visible-light-driven Ag nanoparticles loaded on porous graphitic carbon nitride (g-C3N4) was prepared by the reduction of Ag ions on porous g-C3N4. The obtained Ag/porous g-C3N4 composite products were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), UV-vis diffuse reflection spectra (DRS), thermal gravimetric analysis (TGA). The results demonstrated that a homogeneous distribution of Ag NPs of 10 nm was attached onto the surface of the porous g-C3N4. The prepared Ag/porous g-C3N4 samples were applied for catalyzing the degradation of phenol in water under visible light irradiation. Porous g-C3N4 demonstrated an excellent support for the formation and dispersion of small uniform Ag NPs. When the weight percentage of Ag reaches 5%, the nanohybrid exhibits superior photocatalytic activities compared to bulk g-C3N4, porous g-C3N4, and 2% Ag/porous g-C3N4 hybrids. The enhanced photocatalytic performance is due to the synergic effect between Ag and porous g-C3N4, which suppressed the recombination of photogenerated electron-hole pairs.

  15. Kinetically Enhanced Electrochemical Redox of Polysulfides on Polymeric Carbon Nitrides for Improved Lithium-Sulfur Batteries.

    Science.gov (United States)

    Liang, Ji; Yin, Lichang; Tang, Xiaonan; Yang, Huicong; Yan, Wensheng; Song, Li; Cheng, Hui-Ming; Li, Feng

    2016-09-28

    The kinetics and stability of the redox of lithium polysulfides (LiPSs) fundamentally determine the overall performance of lithium-sulfur (Li-S) batteries. Inspired by theoretical predictions, we herein validated the existence of a strong electrostatic affinity between polymeric carbon nitride (p-C3N4) and LiPSs, that can not only stabilize the redox cycling of LiPSs, but also enhance their redox kinetics. As a result, utilization of p-C3N4 in a Li-S battery has brought much improved performance in the aspects of high capacity and low capacity fading over prolonged cycling. Especially upon the application of p-C3N4, the kinetic barrier of the LiPS redox reactions has been significantly reduced, which has thus resulted in a better rate performance. Further density functional theory simulations have revealed that the origin of such kinetic enhancement was from the distortion of molecular configurations of the LiPSs anchored on p-C3N4. Therefore, this proof-of-concept study opens up a promising avenue to improve the performance of Li-S batteries by accelerating their fundamental electrochemical redox processes, which also has the potential to be applied in other electrochemical energy storage/conversion systems.

  16. Production and characterization of a novel carbon nanotube/titanium nitride nanocomposite

    Science.gov (United States)

    Baddour, Carole Emilie; Das, Kaushik; Vengallatore, Srikar; Meunier, Jean-Luc

    2016-12-01

    A novel titanium nitride (TiN)/carbon nanotube (CNT) nanocomposite is produced with the purpose to mechanically, structurally and chemically stabilize a ‘felt-like’ CNT growth structure. The CNTs are grown on stainless steel (SS) 304 by chemical vapor deposition using the direct growth method previously developed, which does not require the use of an additional catalyst precursor. The TiN coating is achieved by physical vapor deposition and is shown here to generate a nanocomposite with a porous three-dimensional architecture. The contact stiffness is evaluated using nanoindentation, and wetting properties of the TiN/CNT nanocomposites are determined from contact angle measurements. An increase in contact stiffness and effective elastic modulus with TiN coating time was observed. The TiN coating on the non-wetting CNT felt results in a wetting nanocomposite surface. The wetting property is found to be a function of the TiN coating thickness on the CNT structure.

  17. Immobilizing photogenerated electrons from graphitic carbon nitride for an improved visible-light photocatalytic activity.

    Science.gov (United States)

    Sun, Han; Cao, Yue; Feng, Leiyu; Chen, Yinguang

    2016-03-07

    Reducing the recombination probability of photogenerated electrons and holes is pivotal in enhancing the photocatalytic ability of graphitic carbon nitride (g-C3N4). Speeding the departure of photogenerated electrons is the most commonly used method of achieving this. To the best of our knowledge, there is no report on suppressing the recombination of photogenerated electron-hole pairs by immobilizing the electrons with ester functional groups. Here, for the first time the mesoporous g-C3N4 (mpg-C3N4) was integrated with polymethyl methacrylate, a polymer abundant in ester groups, which showed a photocatalytic activity unexpectedly higher than that of the original mpg-C3N4 under visible-light irradiation. Experimental observations, along with theoretical calculations, clarified that the impressive photocatalytic ability of the as-modified mpg-C3N4 was mainly derived from the immobilization of photogenerated electrons via an electron-gripping effect imposed by the ester groups in the polymethyl methacrylate. This novel strategy might also be applied in improving the photocatalytic performance of other semiconductors.

  18. Conductive Graphitic Carbon Nitride as an Ideal Material for Electrocatalytically Switchable CO2 Capture.

    Science.gov (United States)

    Tan, Xin; Kou, Liangzhi; Tahini, Hassan A; Smith, Sean C

    2015-12-01

    Good electrical conductivity and high electron mobility of the sorbent materials are prerequisite for electrocatalytically switchable CO2 capture. However, no conductive and easily synthetic sorbent materials are available until now. Here, we examined the possibility of conductive graphitic carbon nitride (g-C4N3) nanosheets as sorbent materials for electrocatalytically switchable CO2 capture. Using first-principle calculations, we found that the adsorption energy of CO2 molecules on g-C4N3 nanosheets can be dramatically enhanced by injecting extra electrons into the adsorbent. At saturation CO2 capture coverage, the negatively charged g-C4N3 nanosheets achieve CO2 capture capacities up to 73.9 × 10(13) cm(-2) or 42.3 wt%. In contrast to other CO2 capture approaches, the process of CO2 capture/release occurs spontaneously without any energy barriers once extra electrons are introduced or removed, and these processes can be simply controlled and reversed by switching on/off the charging voltage. In addition, these negatively charged g-C4N3 nanosheets are highly selective for separating CO2 from mixtures with CH4, H2 and/or N2. These predictions may prove to be instrumental in searching for a new class of experimentally feasible high-capacity CO2 capture materials with ideal thermodynamics and reversibility.

  19. Self-floating graphitic carbon nitride/zinc phthalocyanine nanofibers for photocatalytic degradation of contaminants.

    Science.gov (United States)

    Xu, Tiefeng; Ni, Dongjing; Chen, Xia; Wu, Fei; Ge, Pengfei; Lu, Wangyang; Hu, Hongguang; Zhu, ZheXin; Chen, Wenxing

    2016-11-05

    The effective elimination of micropollutants by an environmentally friendly method has received extensive attention recently. In this study, a photocatalyst based on polyacrylonitrile (PAN)-supported graphitic carbon nitride coupled with zinc phthalocyanine nanofibers (g-C3N4/ZnTcPc/PAN nanofibers) was successfully prepared, where g-C3N4/ZnTcPc was introduced as the catalytic entity and the PAN nanofibers were employed as support to overcome the defects of easy aggregation and difficult recycling. Herein, rhodamine B (RhB), 4-chlorophenol and carbamazepine (CBZ) were selected as the model pollutants. Compared with the typical hydroxyl radical-dominated catalytic system, g-C3N4/ZnTcPc/PAN nanofibers displayed the targeted adsorption and degradation of contaminants under visible light or solar irradiation in the presence of high additive concentrations. According to the results of the radical scavenging techniques and the electron paramagnetic resonance technology, the degradation of target substrates was achieved by the attack of active species, including photogenerated hole, singlet oxygen, superoxide radicals and hydroxyl radicals. Based on the results of ultra-performance liquid chromatography and mass spectrometry, the role of free radicals on the photocatalytic degradation intermediates was identified and the final photocatalytic degradation products of both RhB and CBZ were some biodegradable small molecules.

  20. Facile preparation and applications of graphitic carbon nitride coating in solid-phase microextraction.

    Science.gov (United States)

    Xu, Na; Wang, Yiru; Rong, Mingcong; Ye, Zhifeng; Deng, Zhuo; Chen, Xi

    2014-10-17

    In this study, graphitic carbon nitride (g-C3N4) was used as a coating material for solid-phase microextraction (SPME) applications. Coupled to gas chromatography (GC), the extraction ability of the SPME fiber was investigated and compared with the commercial fibers of 100 μm PDMS and 85 μm CAR/PDMS using six target analytes including deltamethrin, nerolidol, amphetamine, dodecane, ametryn and acrylamide. The g-C3N4 coating revealed excellent extraction ability and durability comparing with those of the commercial fibers due to its loose structure and unique physicochemical properties. The repeatability for each single fiber was found to be 3.46% and reproducibility for fiber to fiber was 8.53%. The g-C3N4 SPME fiber was applied to the determination of acrylamide in potato chips, the linearity and detection limit was 0.5-250 μg g(-1) and 0.018 μg g(-1), respectively.

  1. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  2. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; Rath, J.K.; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, a

  3. Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

    NARCIS (Netherlands)

    Isai, Gratiela I.; Holleman, Jisk; Wallinga, Hans; Woerlee, Pierre H.

    2004-01-01

    Silicon nitride layers with very low hydrogen content (less than 1 atomic percent) were deposited at near room temperature, from N2 and SiH4, with a multipolar electron cyclotron resonance plasma. The influences of pressure and nitrogen flow rate on physical and electrical properties were studied in

  4. Coaxial carbon@boron nitride nanotube arrays with enhanced thermal stability and compressive mechanical properties

    Science.gov (United States)

    Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Huang, Jingfeng; Tan, Dunlin; Zhang, Bowei; Teo, Edwin Hang Tong; Tok, Alfred Iing Yoong

    2016-05-01

    Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability. CNT arrays are grown using a commercially available thermal chemical vapor deposition (TCVD) technique and an outer BNNT with a wall thickness up to 1.37 nm is introduced by a post-growth TCVD treatment. Importantly, compared to the as-grown CNT arrays which deform almost plastically upon compression, the coaxial C@BNNT arrays exhibit an impressive ~4-fold increase in compressive strength with nearly full recovery after the first compression cycle at a 50% strain (76% recovery maintained after 10 cycles), as well as a significantly high and persistent energy dissipation ratio (~60% at a 50% strain after 100 cycles), attributed to the synergistic effect between the CNT and outer BNNT. Additionally, the as-prepared C@BNNT arrays show an improved structural stability in air at elevated temperatures, attributing to the outstanding thermal stability of the outer BNNT. This work provides new insights into tailoring the mechanical and thermal behaviours of arbitrary CNT arrays which enables a broader range of applications.Vertically aligned carbon nanotube (CNT) arrays have aroused considerable interest because of their remarkable mechanical properties. However, the mechanical behaviour of as-synthesized CNT arrays could vary drastically at a macro-scale depending on their morphologies, dimensions and array density, which are determined by the synthesis method. Here, we demonstrate a coaxial carbon@boron nitride nanotube (C@BNNT) array with enhanced compressive strength and shape recoverability

  5. Preparation of Electrically Conductive Polystyrene/Carbon Nanofiber Nanocomposite Films

    Science.gov (United States)

    Sun, Luyi; O'Reilly, Jonathan Y.; Tien, Chi-Wei; Sue, Hung-Jue

    2008-01-01

    A simple and effective approach to prepare conductive polystyrene/carbon nanofiber (PS/CNF) nanocomposite films via a solution dispersion method is presented. Inexpensive CNF, which has a structure similar to multi-walled carbon nanotubes, is chosen as a nanofiller in this experiment to achieve conductivity in PS films. A good dispersion is…

  6. Solid-State Imaging Device With Carbon Film

    Science.gov (United States)

    Frazer, Robert E.

    1992-01-01

    Performance of solid-state imaging device enhanced by coating surface through which photons enter with thin film of carbon or diamondlike carbon. Film beneficial in two ways: acts as antireflection coat, and helps to dissipate undesired static electric charges that otherwise accumulate on surface.

  7. Flexible protective diamond-like carbon film on rubber

    NARCIS (Netherlands)

    Pei, Y.T.; Bui, X.L.; Hosson, J.Th.M. De

    2010-01-01

    In this paper we report an experimental approach to deposit flexible diamond-like carbon (DLC) films on rubber via self-segmentation. By making use of the substantial thermal mismatch between the DLC film and rubber substrate a dense network of cracks forms in the DLC film, contributing to its flexi

  8. Preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyeon-Hye [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Han, Woong [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of); Lee, Hae-seong [Nano& Advanced Materials Engineering, Jeonju University, Jeonju 560-759 (Korea, Republic of); Min, Byung-Gak [Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju 380-702 (Korea, Republic of); Kim, Byung-Joo, E-mail: ap2-kbj@hanmail.net [R& D Division, Korea Institute of Carbon Convergence Technology, Jeonju 561-844 (Korea, Republic of)

    2015-10-15

    Graphical abstract: We report preparation and characterization of silicon nitride (Si−N)-coated carbon fibers and their effects on thermal properties in composites. Thermally composites showed enhanced thermal conductivity increasing from up to 59% by the thermal network. - Highlights: • A new method of Si−N coating on carbon fibers was reported. • Silane layer were successfully converted to Si−N layer on carbon fiber surface. • Si−N formation was confirmed by FT-IR, XPS, and EDX. • Thermal conductivity of Si−N coated CF composites were enhanced to 0.59 W/mK. - Abstract: This study investigates the effect of silicon nitride (Si−N)-coated carbon fibers on the thermal conductivity of carbon-fiber-reinforced epoxy composite. The surface properties of the Si−N-coated carbon fibers (SiNCFs) were observe using Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy, and the thermal stability was analyzed using thermogravimetric analysis. SiNCFs were fabricated through the wet thermal treatment of carbon fibers (Step 1: silane finishing of the carbon fibers; Step 2: high-temperature thermal treatment in a N{sub 2}/NH{sub 3} environment). As a result, the Si−N belt was exhibited by SEM. The average thickness of the belt were 450–500 nm. The composition of Si−N was the mixture of Si−N, Si−O, and C−Si−N as confirmed by XPS. Thermal residue of the SiNCFs in air was enhanced from 3% to 50%. Thermal conductivity of the composites increased from 0.35 to 0.59 W/mK after Si−N coating on carbon surfaces.

  9. ELECTROCHEMICAL INVESTIGATION ON CARBON NANOTUBE FILM WITH DIFFERENT PRETREATMENTS

    Institute of Scientific and Technical Information of China (English)

    C.G. Hu; W.L. Wang; Y. Ma; W. Zhu

    2003-01-01

    Wide potential windows were found at carbon nanotube film electrodes in neutral solutions after being treated with nitric acid and mixed acid. Electrochemical reversibility was investigated at carbon nanotube films with different pretreatments for ferri/ferrocyanide and quinone /hydroquinone. Carbon nanotube film electrodes presented quasi-reversible electrochemical behavior for both electrolytes. In the range of scan rate, carbon nanotube film electrodes treated with acids showed heterogeneous electron-transfer properties, which was mainly controlled by its electron state density on the surface of the film. On the whole, the carbon nanotube electrode with nitric acid treatment presented the best electrochemical behaviors, so we chose it as an analytical electrode to determine the trace compound in dilute solution. The results demonstrated that this new electrode material exhibits superior performance characteristics for the detection of azide anion.

  10. Time resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride

    CERN Document Server

    Mitschker, Felix; Benedikt, Jan; Maszl, Christian; von Keudell, Achim

    2013-01-01

    The growth rate during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride is measured with a temporal resolution of up to 25 us using a rotating shutter concept. According to that concept a 200 um slit is rotated in front of the substrate synchronous with the HIPIMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry and with x-ray photoelectron spectroscopy, the temporal variation of the titanium and nitrogen growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during a HIPIMS pulse, with the growth rate following the HIPIMS phases ignition, current rise, gas rarefaction, plateau and afterglow. The growth fluxes of titanium and nitrogen follow slightly different behaviors with titanium dominating at the beginning of the HIPIMS pulse and nitrogen at the end of the pulse. This is explained by the gas rarefaction effect resulting in a dense initial metal plasma and...

  11. Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

    Science.gov (United States)

    Antonova, K.; Duta, L.; Szekeres, A.; Stan, G. E.; Mihailescu, I. N.; Anastasescu, M.; Stroescu, H.; Gartner, M.

    2017-02-01

    Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A1LO mode frequency was analysed and connected to the orientation of the particles' optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers' properties is discussed on this basis.

  12. Fabrication of a Carbon Nanotube-Embedded Silicon Nitride Membrane for Studies of Nanometer-Scale Mass Transport

    Energy Technology Data Exchange (ETDEWEB)

    Holt, J K; Noy, A; Huser, T; Eaglesham, D; Bakajin, O

    2004-08-25

    A membrane consisting of multiwall carbon nanotubes embedded in a silicon nitride matrix was fabricated for fluid mechanics studies on the nanometer scale. Characterization by tracer diffusion and scanning electron microscopy suggests that the membrane is free of large voids. An upper limit to the diffusive flux of D{sub 2}O of 2.4x10-{sup 8} mole/m{sup 2}-s was determined, indicating extremely slow transport. By contrast, hydrodynamic calculations of water flow across a nanotube membrane of similar specifications predict a much higher molar flux of 1.91 mole/m{sup 2}-s, suggesting that the nanotubes produced possess a 'bamboo' morphology. The carbon nanotube membranes were used to make nanoporous silicon nitride membranes, fabricated by sacrificial removal of the carbon. Nitrogen flow measurements on these structures give a membrane permeance of 4.7x10{sup -4} mole/m{sup 2}-s-Pa at a pore density of 4x10{sup 10} cm{sup -2}. Using a Knudsen diffusion model, the average pore size of this membrane is estimated to be 66 nm, which agrees well with TEM observations of the multiwall carbon nanotube outer diameter. These membranes are a robust platform for the study of confined molecular transport, with applications inseparations and chemical sensing.

  13. Marine corrosion protective coatings of hexagonal boron nitride thin films on stainless steel.

    Science.gov (United States)

    Husain, Esam; Narayanan, Tharangattu N; Taha-Tijerina, Jose Jaime; Vinod, Soumya; Vajtai, Robert; Ajayan, Pulickel M

    2013-05-22

    Recently, two-dimensional, layered materials such as graphene and hexagonal boron nitride (h-BN) have been identified as interesting materials for a range of applications. Here, we demonstrate the corrosion prevention applications of h-BN in marine coatings. The performance of h-BN/polymer hybrid coatings, applied on stainless steel, were evaluated using electrochemical techniques in simulated seawater media [marine media]. h-BN/polymer coating shows an efficient corrosion protection with a low corrosion current density of 5.14 × 10(-8) A/cm(2) and corrosion rate of 1.19 × 10(-3) mm/year and it is attributed to the hydrofobic, inert and dielectric nature of boron nitride. The results indicated that the stainless steel with coatings exhibited improved corrosion resistance. Electrochemical impedance spectroscopy and potentiodynamic analysis were used to propose a mechanism for the increased corrosion resistance of h-BN coatings.

  14. Workshop on diamond and diamond-like-carbon films for the transportation industry

    Energy Technology Data Exchange (ETDEWEB)

    Nichols, F.A.; Moores, D.K. [eds.

    1993-01-01

    Applications exist in advanced transportation systems as well as in manufacturing processes that would benefit from superior tribological properties of diamond, diamond-like-carbon and cubic boron nitride coatings. Their superior hardness make them ideal candidates as protective coatings to reduce adhesive, abrasive and erosive wear in advanced diesel engines, gas turbines and spark-ignited engines and in machining and manufacturing tools as well. The high thermal conductivity of diamond also makes it desirable for thermal management not only in tribological applications but also in high-power electronic devices and possibly large braking systems. A workshop has been recently held at Argonne National Laboratory entitled ``Diamond and Diamond-Like-Carbon Films for Transportation Applications`` which was attended by 85 scientists and engineers including top people involved in the basic technology of these films and also representatives from many US industrial companies. A working group on applications endorsed 18 different applications for these films in the transportation area alone. Separate abstracts have been prepared.

  15. Effect of nitrogen flow ratio on structure and properties of zirconium nitride films on Si(100) prepared by ion beam sputtering

    Indian Academy of Sciences (India)

    Shahab Norouzian; Majid Mojtahedzadeh Larijani; Reza Afzalzadeh

    2012-10-01

    In this study, zirconium nitride thin films were deposited on Si substrates by ion beam sputtering (IBS). Influence of N2/(N2+Ar) on the structural and physical properties of the films has been investigated with respect to the atomic ratio between nitrogen and zirconium. It was found that the thickness of layers decreased by increasing the F(N2). Moreover, crystalline plane peaks such as (111), (200) and (220) with (111) preferred orientation were observed due to strain energy which associate with (111) orientation in ZrN. Also, the fluctuation in nitrogen flow ratio results in colour and electrical resistivity of films.

  16. The Multiple Effects of Precursors on the Properties of Polymeric Carbon Nitride

    Directory of Open Access Journals (Sweden)

    Wendong Zhang

    2013-01-01

    Full Text Available Polymeric graphitic carbon nitride (g-C3N4 materials were prepared by direct pyrolysis of thiourea, dicyandiamide, melamine, and urea under the same conditions, respectively. In order to investigate the effects of precursors on the intrinsic physicochemical properties of g-C3N4, a variety of characterization tools were employed to analyze the samples. The photocatalytic activity of the samples was evaluated by the removal of NO in gas phase under visible light irradiation. The results showed that the as-prepared CN-T (from thiourea, CN-D (from dicyandiamide, CN-M (from melamine, and CN-U (from urea exhibited significantly different morphologies and microstructures. The band gaps of CN-T, CN-D, CN-M, and CN-U were 2.51, 2.58, 2.56, and 2.88 eV, respectively. Both thermal stability and yield are in the following order: CN-M > CN-D > CN-T > CN-U. The photoactivity of CN-U (31.9% is higher than that of CN-T (29.6%, CN-D (22.2%, and CN-M (26.8%. Considering the cost, toxicity, and yield of the precursors and the properties of g-C3N4, the best precursor for preparation of g-C3N4 was melamine. The present work could provide new insights into the selection of suitable precursor for g-C3N4 synthesis and in-depth understanding of the microstructure-dependent photocatalytic activity of g-C3N4.

  17. Novel band gap-tunable K–Na co-doped graphitic carbon nitride prepared by molten salt method

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jiannan [Institute of Eco-environmental Sciences, Liaoning Shihua University, Fushun 113001 (China); School of Environmental and Biological Engineering, Liaoning Shihua University, Fushun 113001 (China); Ma, Lin [School of Petrochemical Engineering, Liaoning Shihua University, Fushun 113001 (China); Wang, Haoying; Zhao, Yanfeng [School of Environmental and Biological Engineering, Liaoning Shihua University, Fushun 113001 (China); Zhang, Jian [School of Petrochemical Engineering, Liaoning Shihua University, Fushun 113001 (China); Hu, Shaozheng, E-mail: hushaozhenglnpu@163.com [Institute of Eco-environmental Sciences, Liaoning Shihua University, Fushun 113001 (China)

    2015-03-30

    Graphical abstract: K and Na ions co-doped into g-C{sub 3}N{sub 4} crystal lattice can tune the position of CB and VB potentials, influence the structural and optical properties, and thus improve the photocatalytic degradation and mineralization ability. - Highlights: • K, Na co-doped g-C{sub 3}N{sub 4} was prepared in KCl/NaCl molten salt system. • The structural and optical properties of g-C{sub 3}N{sub 4} were greatly influenced by co-doping. • The position of VB and CB can be tuned by controlling the weight ratio of eutectic salts to melamine. • Co-doped g-C{sub 3}N{sub 4} showed outstanding photodegradation ability, mineralization ability, and catalytic stability. - Abstract: Novel band gap-tunable K–Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N{sub 2} adsorption, Scanning electron microscope (SEM), UV–vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from −1.09 and +1.55 eV to −0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K–Na co-doping.

  18. Studies to Enhance Superconductivity in Thin Film Carbon

    Science.gov (United States)

    Pierce, Benjamin; Brunke, Lyle; Burke, Jack; Vier, David; Steckl, Andrew; Haugan, Timothy

    2012-02-01

    With research in the area of superconductivity growing, it is no surprise that new efforts are being made to induce superconductivity or increase transition temperatures (Tc) in carbon given its many allotropic forms. Promising results have been published for boron doping in diamond films, and phosphorus doping in highly oriented pyrolytic graphite (HOPG) films show hints of superconductivity.. Following these examples in the literature, we have begun studies to explore superconductivity in thin film carbon samples doped with different elements. Carbon thin films are prepared by pulsed laser deposition (PLD) on amorphous SiO2/Si and single-crystal substrates. Doping is achieved by depositing from (C1-xMx) single-targets with M = B4C and BN, and also by ion implantation into pure-carbon films. Previous research had indicated that Boron in HOPG did not elicit superconducting properties, but we aim to explore that also in thin film carbon and see if there needs to be a higher doping in the sample if trends were able to be seen in diamond films. Higher onset temperatures, Tc , and current densities, Jc, are hoped to be achieved with doping of the thin film carbon with different elements.

  19. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    Science.gov (United States)

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %).

  20. Application of magnetic graphitic carbon nitride nanocomposites for the solid-phase extraction of phthalate esters in water samples.

    Science.gov (United States)

    Wang, Man; Yang, Xiaodi; Bi, Wentao

    2015-02-01

    Magnetic graphitic carbon nitride nanocomposites were successfully prepared in situ and used to develop a highly sensitive magnetic solid-phase extraction method for the preconcentration of phthalate esters such as di-n-butyl phthalate, butyl phthalate, dihexyl phthalate, and di-(2-ethyl hexyl) phthalate from water. The adsorption and desorption of the phthalate esters on magnetic graphitic carbon nitride nanocomposites were investigated and the parameters affecting the partition of the phthalate esters, such as adsorption, desorption, recovery, were assessed. Under the optimized conditions, the proposed method showed excellent sensitivity with limits of detection (S/N = 3) in the range of 0.05-0.1 μg/L and precision in the range of 1.1-2.6% (n = 5). This method was successfully applied to the analysis of real water samples, and good spiked recoveries over the range of 79.4-99.4% were obtained. This research provides a possibility to apply this nanocomposite for adsorption, preconcentration, or even removal of various carbon-based ring or hydrophobic pollutants.

  1. EXPERIMENTAL STUDY ON SUPERFICIAL COAT OF GEARS OF NITRIDED 32Cr2MoV COATED WITH TiN FILM BY MULTI-ARC ION PLATING

    Institute of Scientific and Technical Information of China (English)

    LI Hui; LI Runfang; XU Hongbin; ZHANG Jin

    2007-01-01

    After 32CrMoV is selected to manufacture nitrided gears coated with TiN by multi-arc ion plating, all of these uncoated gears and coated gears run in the gearbox under the same initial conditions so as to compare their difference concerning properties and microstructure. Experiment results indicate that tooth surface of the coated-TiN gears does not suffer surface abnormalities in meshed zone. Instead, the gears with nitrided case exhibit an abrasion mark on the meshed zone of tooth surface, which results in more weight loss of nitrided gears. The morphology of the surface suggests TiN film with more than 2000 HV is so dense and smooth that coated-TiN gears have higher wear resistance compared with the uncoated gears. The microstructure of coated-TiN gears is finer, hardness is higher and its distribution of coated-TiN gears is more reliable than uncoated ones, which makes nitride layer combined with TiN film tightly. Consequently, the wear-resistance of gears has been dramatically promoted.

  2. Preparation of Poly(p-phenylene sulfi de)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

    Institute of Scientific and Technical Information of China (English)

    WU Jieli; WANG Jinwen; CHEN Feng

    2015-01-01

    The present work enhanced the thermal conductivity of poly(p-phenylene sulfi de)/expanded graphites and poly(p-phenylene sulfi de)/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbonfi llers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

  3. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP (United Kingdom); Peuter, K. de; Kessels, W. M. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  4. A structural insight into mechanical strength of graphene-like carbon and carbon nitride networks

    Science.gov (United States)

    Rahaman, Obaidur; Mortazavi, Bohayra; Dianat, Arezoo; Cuniberti, Gianaurelio; Rabczuk, Timon

    2017-02-01

    Graphene, one of the strongest materials ever discovered, triggered the exploration of many 2D materials in the last decade. However, the successful synthesis of a stable nanomaterial requires a rudimentary understanding of the relationship between its structure and strength. In the present study, we investigate the mechanical properties of eight different carbon-based 2D nanomaterials by performing extensive density functional theory calculations. The considered structures were just recently either experimentally synthesized or theoretically predicted. The corresponding stress-strain curves and elastic moduli are reported. They can be useful in training force field parameters for large scale simulations. A comparative analysis of these results revealed a direct relationship between atomic density per area and elastic modulus. Furthermore, for the networks that have an armchair and a zigzag orientation, we observed that they were more stretchable in the zigzag direction than the armchair direction. A critical analysis of the angular distributions and radial distribution functions suggested that it could be due to the higher ability of the networks to suppress the elongations of the bonds in the zigzag direction by deforming the bond angles. The structural interpretations provided in this work not only improve the general understanding of a 2D material’s strength but also enables us to rationally design them for higher qualities.

  5. Pulsed laser deposition of carbon nanotube and polystyrene-carbon nanotube composite thin films

    Science.gov (United States)

    Stramel, A. A.; Gupta, M. C.; Lee, H. R.; Yu, J.; Edwards, W. C.

    2010-12-01

    In this work, we report on the fabrication of carbon nanotube thin films via pulsed laser deposition using a pulsed, diode pumped, Tm:Ho:LuLF laser with 2 μm wavelength. The thin films were deposited on silicon substrates using pure carbon nanotube targets and polystyrene-carbon nanotube composite targets. Raman spectra, scanning electron micrographs, and transmission electron micrographs show that carbon nanotubes are present in the deposited thin films, and that the pulsed laser deposition process causes minimal degradation to the quality of the nanotubes when using pure carbon nanotube targets.

  6. Hybridizing Poly(ε-caprolactone) and Plasmonic Titanium Nitride Nanoparticles for Broadband Photoresponsive Shape Memory Films.

    Science.gov (United States)

    Ishii, Satoshi; Uto, Koichiro; Niiyama, Eri; Ebara, Mitsuhiro; Nagao, Tadaaki

    2016-03-01

    Plasmonic nanoparticles can confine light in nanoscale and locally heat the surrounding. Here we use titanium nitride (TiN) nanoparticles as broadband plasmonic light absorbers and synthesized a highly photoresponsive hybrid cross-linked polymer from shape memory polymer poly(ε-caprolactone) (PCL). The TiN-PCL hybrid is responsive to sunlight and the threshold irradiance was among the lowest when compared with other photoresponsive shape memory polymers studied previously. Sunlight heating with TiN NPs can be applied to other heat responsive smart polymers, thereby contributing to energy-saving smart polymers research for a sustainable society.

  7. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  8. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  9. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

  10. Synthesis and characterization of atomic layer deposited titanium nitride thin films on lithium titanate spinel powder as a lithium-ion battery anode

    Energy Technology Data Exchange (ETDEWEB)

    Snyder, Mark Q.; Wheeler, M. Clayton [Department of Chemical and Biological Engineering, University of Maine, 5737 Jenness Hall, Orono, ME 04469 (United States); Trebukhova, Svetlana A.; Ravdel, Boris; DiCarlo, Joseph [Yardney Technical Products/Lithion Inc., Pawcatuck, CT 06379 (United States); Tripp, Carl P. [Laboratory for Surface Science and Technology (LASST), 5708 ESRB-Barrows, Orono, ME 04469 (United States); Department of Chemistry, University of Maine, Orono, ME 04469 (United States); DeSisto, William J. [Department of Chemical and Biological Engineering, University of Maine, 5737 Jenness Hall, Orono, ME 04469 (United States); Laboratory for Surface Science and Technology (LASST), 5708 ESRB-Barrows, Orono, ME 04469 (United States)

    2007-02-25

    Lithium titanate spinel (Li{sub 4}Ti{sub 5}O{sub 12}, or LTS) is receiving consideration as a nanopowder anode material for use in lithium-ion batteries. LTS has more positive working potential than traditional graphite anodes, and it does not react with electrolyte components. However, the main drawback of LTS powder is its poor interparticle electronic conductance that reduces the high-rate ability of the electrode. To improve this we have coated the surface of the LTS powder with a titanium nitride layer by atomic layer deposition (ALD). In situ infrared spectroscopy studies were conducted to confirm the attachment of the titanium precursor. The nitrogen content of films was measured by total nitrogen content testing. Transmission electron microscopy (TEM) micrographs confirmed the formation of a thin titanium nitride film around LTS particles by ALD. Finally, lithium cells with electrodes made of original and modified LTS nanopowders were assembled and tested. (author)

  11. Sputtering deposition and characterization of ultrathin amorphous carbon films

    Science.gov (United States)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  12. Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films

    Institute of Scientific and Technical Information of China (English)

    王万录; 廖克俊; 李勇; 王永田

    2003-01-01

    The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.

  13. Silver quantum cluster (ag9 )-grafted graphitic carbon nitride nanosheets for photocatalytic hydrogen generation and dye degradation.

    Science.gov (United States)

    Sridharan, Kishore; Jang, Eunyong; Park, Jung Hyun; Kim, Jong-Ho; Lee, Jung-Ho; Park, Tae Joo

    2015-06-15

    We report the visible-light photocatalytic properties of a composite system consisting of silver quantum clusters [Ag9 (H2 MSA)7 ] (H2 MSA=mercaptosuccinic acid) embedded on graphitic carbon nitride nanosheets (AgQCs-GCN). The composites were prepared through a simple chemical route; their structural, chemical, morphological, and optical properties were characterized by using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, transmission electron microscopy, UV/Vis diffuse reflectance spectroscopy, and photoluminescence spectroscopy. Embedment of [Ag9 (H2 MSA)7 ] on graphitic carbon nitride nanosheets (GCN) resulted in extended visible-light absorption through multiple single-electron transitions in Ag quantum clusters and an effective electronic structure for hydroxyl radical generation, which enabled increased activity in the photocatalytic degradation of methylene blue and methyl orange dye molecules compared with pristine GCN and silver nanoparticle-grafted GCN (AgNPs-GCN). Similarly, the amount of hydrogen generated by using AgQCs-GCN was 1.7 times higher than pristine GCN. However, the rate of hydrogen generated using AgQCs-GCN was slightly less than that of AgNPs-GCN because of surface hydroxyl radical formation. The plausible photocatalytic processes are discussed in detail.

  14. Improved tensile and buckling behavior of defected carbon nanotubes utilizing boron nitride coating - A molecular dynamic study

    Science.gov (United States)

    Badjian, H.; Setoodeh, A. R.

    2017-02-01

    Synthesizing inorganic nanostructures such as boron nitride nanotubes (BNNTs) have led to immense studies due to their many interesting functional features such as piezoelectricity, high temperature resistance to oxygen, electrical insulation, high thermal conductivity and very long lengths as physical features. In order to utilize the superior properties of pristine and defected carbon nanotubes (CNTs), a hybrid nanotube is proposed in this study by forming BNNTs surface coating on the CNTs. The benefits of such coating on the tensile and buckling behavior of single-walled CNTs (SWCNTs) are illustrated through molecular dynamics (MD) simulations of the resulted nanostructures during the deformation. The AIREBO and Tersoff-Brenner potentials are employed to model the interatomic forces between the carbon and boron nitride atoms, respectively. The effects of chiral indices, aspect ratio, presence of mono-vacancy defects and coating dimension on coated/non-coated CNTs are examined. It is demonstrated that the coated defective CNTs exhibit remarkably enhanced ultimate strength, buckling load capacity and Young's modulus. The proposed coating not only enhances the mechanical properties of the resulted nanostructure, but also conceals it from few external factors impacting the behavior of the CNT such as humidity and high temperature.

  15. Direct electrochemistry of cytochrome c immobilized on titanium nitride/multi-walled carbon nanotube composite for amperometric nitrite biosensor.

    Science.gov (United States)

    Haldorai, Yuvaraj; Hwang, Seung-Kyu; Gopalan, Anantha-Iyengar; Huh, Yun Suk; Han, Young-Kyu; Voit, Walter; Sai-Anand, Gopalan; Lee, Kwang-Pill

    2016-05-15

    In this report, titanium nitride (TiN) nanoparticles decorated multi-walled carbon nanotube (MWCNTs) nanocomposite is fabricated via a two-step process. These two steps involve the decoration of titanium dioxide nanoparticles onto the MWCNTs surface and a subsequent thermal nitridation. Transmission electron microscopy shows that TiN nanoparticles with a mean diameter of ≤ 20 nm are homogeneously dispersed onto the MWCNTs surface. Direct electrochemistry and electrocatalysis of cytochrome c immobilized on the MWCNTs-TiN composite modified on a glassy carbon electrode for nitrite sensing are investigated. Under optimum conditions, the current response is linear to its concentration from 1 µM to 2000 µM with a sensitivity of 121.5 µA µM(-1)cm(-2) and a low detection limit of 0.0014 µM. The proposed electrode shows good reproducibility and long-term stability. The applicability of the as-prepared biosensor is validated by the successful detection of nitrite in tap and sea water samples.

  16. Irradiation of the amorphous carbon films by picosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Marcinauskas, L., E-mail: liutauras.marcinauskas@ktu.lt [Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania); Grigonis, A. [Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania); Račiukaitis, G.; Gedvilas, M. [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania); Vinciūnaitė, V. [Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania)

    2015-10-30

    The effect of a picosecond laser irradiation on structure modification of diamond-like carbon (DLC) and graphite-like carbon (GLC) films was analyzed in this work. The DLC films were irradiated by Nd:YVO{sub 4} laser operating at the 532 nm wavelength with the picosecond (10 ps) pulse duration at the fluence in the range of (0.08–0.76) J/cm{sup 2}. The GLC films were irradiated only at the fluence of 0.76 J/cm{sup 2}. The different pulse number (1, 10, and 100) was used for irradiation the films. The micro-Raman spectroscopy measurements indicated that the laser irradiation led to rearrangement of the sp{sup 3} C–C bonds to the sp{sup 2} C=C bonds in the DLC films. The formation of silicon carbide (SiC) was found in the irradiated spot after 10 and 100 pulses. Modifications in the structure of the DLC film took place even in the areas with low intensity of the Gaussian beam wings (heat affected areas). The increase in the oxygen concentration up to ten times was detected in the heat affected areas after 100 pulses. Opposite to that, the laser irradiation decreased the oxygen concentration and smoothened the surface microrelief of the GLC films. The bonding type remained unchanged in the GLC films even after irradiation with 100 pulses per spot. - Highlights: • The picosecond laser irradiation led to the rearrangement of sp{sup 3} C-C to the sp{sup 2} C = C bonds in the diamond-like carbon film. • The ps-laser irradiation of the DLC films stipulates appearance of the aromatic carbon structures. • The bonding type of the graphite-like carbon films remained unchanged even after ps laser irradiation with 100 pulses.

  17. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Yap, Yoke Khin

    2013-03-14

    Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy's Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los

  18. Dendritic Tip-on Polytriazine-Based Carbon Nitride Photocatalyst with High Hydrogen Evolution Activity

    KAUST Repository

    Bhunia, Manas Kumar

    2015-11-23

    Developing stable, ubiquitous and efficient water-splitting photocatalyst material that has extensive absorption in the visible-light range is desired for a sustainable solar energy-conversion device. We herein report a triazine-based carbon nitride (CN) material with different C/N ratios achieved by varying the monomer composition ratio between melamine (Mel) and 2,4,6-triaminopyrimidine (TAP). The CN material with a different C/N ratio was obtained through a two-step synthesis protocol: starting with the solution state dispersion of the monomers via hydrogen-bonding supramolecular aggregate, followed by a salt-melt high temperature polycondensation. This protocol ensures the production of a highly crystalline polytriazine imide (PTI) structure con-sisting of a copolymerized Mel-TAP network. The observed bandgap narrowing with an increasing TAP/Mel ratio is well simulated by density functional theory (DFT) calculations, revealing a positive shift in the valence band upon substitution of N with CH in the aromatic rings. Increasing the TAP amount could not maintain the crystalline PTI structure, consistent with DFT calculation showing the repulsion associated with additional C-H introduced in the aromatic rings. Due to the high exciton binding energy calculated by DFT for the obtained CN, the cocatalyst must be close to any portion of the material to assist the separation of excit-ed charge carriers for an improved photocatalytic performance. The photocatalytic activity was improved by providing a dendritic tip-on-like shape grown on a porous fibrous silica KCC-1 spheres, and highly dispersed Pt nanoparticles (<5 nm) were photodepos-ited to introduce heterojunction. As a result, the Pt/CN/KCC-1 photocatalyst exhibited an apparent quantum efficiency (AQE) as high as 22.1 ± 3% at 400 nm and the silica was also beneficial for improving photocatalytic stability. The results obtained by time-resolved transient absorption spectroscopy measurements were consistent with

  19. carbon Nitride Compounds Synthesized by Thermal Annealing Amorphous Nanostructured Graphite under the Flow of NH3 Gas

    Institute of Scientific and Technical Information of China (English)

    公志光; 李木森

    2003-01-01

    Graphitic-C3N4 (g-C3N4) and pseudocubic-C3N4 (p-C3N4) have been synthesized by thermally annealing highenergy ball milled amorphous nanostructured graphite powders under NH3 atmosphere. The experimental results by x-ray, transmission-electron microscopy, selected electron area diffraction and parallel electron energy loss spectroscopy indicated that g-C3N4 grew from the milled graphite powders in the presence of NH3 gas at a temperature of 1050 ℃. After treatment at a temperature of 1350 ℃, the pseudocubic-C3N4 phase forms. It was believed that the high-energy ball milling generates nanosized amorphous graphite structures, under subsequent isothermal annealing in a flow of NH3 gas, the carbon nitride compound can easily form through reaction of nanostructured carbon with nitrogen of NH3.

  20. Graphene diamond-like carbon films heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B., E-mail: r.jackman@ucl.ac.uk [London Centre for Nanotechnology, Electronic and Electrical Engineering Department, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  1. Graphene diamond-like carbon films heterostructure

    Science.gov (United States)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  2. Wettability of Nafion and Nafion/Vulcan carbon composite films.

    Science.gov (United States)

    Li, Xiaoan; Feng, Fangxia; Zhang, Ke; Ye, Siyu; Kwok, Daniel Y; Birss, Viola

    2012-04-24

    The wettability of the Pt/carbon/Nafion catalyst layer in proton exchange membrane fuel cells is critical to their performance and durability, especially the cathode, as water is needed for the transport of protons to the active sites and is also involved in deleterious Pt nanoparticle dissolution and carbon corrosion. Therefore, the focus of this work has been on the first-time use of the water droplet impacting method to determine the wettability of 100% Nafion films, as a benchmark, and then of Vulcan carbon (VC)/Nafion composite films, both deposited by spin-coating in the Pt-free state. Pure Nafion films, shown by SEM analysis to have a nanochanneled structure, are initially hydrophobic but become hydrophilic as the water droplet spreads, likely due to reorientation of the sulfonic acid groups toward water. The wettability of VC/Nafion composite films depends significantly on the VC/Nafion mass ratios, even though Nafion is believed to be preferentially oriented (sulfonate groups toward VC) in all cases. At low VC contents, a significant water droplet contact angle hysteresis is seen, similar to pure Nafion films, while at higher VC contents (>30%), the films become hydrophobic, also exhibiting superhydrophobicity, with surface roughness playing a significant role. At >80% VC, the surfaces become wettable again as there is insufficient Nafion loading present to fully cover the carbon surface, allowing the calculation of the Nafion:carbon ratio required for a full coverage of carbon by Nafion.

  3. INVESTIGATION OF AES AND XPS FOR THE ION BOMBARDED CARBON FILMS ON THE SURFACE OF TUNGSTEN ALLOY%离子束轰击钨合金表面碳膜的AES和XPS分析

    Institute of Scientific and Technical Information of China (English)

    李俊; 高剑; 张一云; 吴丽萍; 黄宁康; 赵纯培

    2000-01-01

    Tungsten alloy with special properties is a useful material in medical and weapon devices. Surface modification of ion technique is used to improve the surface hardness and wear resistance of tungsten alloy, where carbon films deposited with magnetron sputtering on the surface of tungsten alloy were bombarded by ion beam with different species AES and XPS analyses for these speciment show that tungsten carbide and tungsten nitride were formed due to N+ bombardment. Which is beneficial to the Surface hardness and wear resistance of tungsten alloy,but no carbide or no nitride as above with other ion species. Again,ion bombardness leads to mixing between the carbon and tungsten alloy hence improve the adhere of carbon film to the substrate.

  4. Properties of electrophoretically deposited single wall carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Junyoung; Jalali, Maryam; Campbell, Stephen A., E-mail: campb001@umn.edu

    2015-08-31

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10{sup −3} Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm{sup 3}, and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators.

  5. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong, E-mail: xzzhang@tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People' s Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084 (China)

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  6. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

    Institute of Scientific and Technical Information of China (English)

    XING Zhi-Gang; WANG Jing; PEI Xiao-Jiang; WAN Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    @@ By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci.Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.

  7. A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

    KAUST Repository

    Duan, X. F.

    2013-01-08

    Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

  8. Raman spectra of amorphous carbon films deposited by SWP

    Science.gov (United States)

    Xu, Junqi; Liu, Weiguo; Hang, Lingxia; Su, Junhong; Fan, Huiqing

    2010-10-01

    Amorphous carbon film is one of the most important anti-reflection protective films coated on infrared optical components. In this paper, hydrogen-free amorphous carbon films were deposited by new type surface-wave-sustained plasma (SWP) source with a graphite target at various experiment parameters. The laser Raman spectroscopy at wavelength of 514 nm was used to investigate the structure and bonding of these carbon films. The results showed consanguineous correlations between the intensity ratio ID/IG and the experiment parameters such as microwave power, target voltage and gas pressure applied to the SWP source. Raman spectra proved the structure of these carbon films prepared by SWP technique is typical diamond-like carbon (DLC). The analysis on G peak position and intensity ratio ID/IG indicated that Raman shifts moves to low wavenumber and ID/IG decreases with the increasing of microwave power from 150 W to 330 W. These results means the formation of sp3 bond prefers higher microwave power. DLC films prepared at target voltage of -200 V have higher sp3 content than that of -350 V, moreover, an increase of gas pressure during experiments yields higher sp3 content at the microwave power below 270 W, whereas the change of sp3 content is slight with the various conditions when microwave power exceeds 270 W.

  9. Structural characterization of thin films of titanium nitride deposited by laser ablation; Caracterizacion estructural de peliculas delgadas de nitruro de titanio depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Castro C, M.A.; Escobar A, L.; Camps C, E.; Mejia H, J.A. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    2004-07-01

    Thin films of titanium nitride were deposited using the technique of laser ablation. It was studied the effect of the density of laser energy used for ablation the target as well as of the pressure of the work gas about the structure and the hardness of the deposited thin films. Depending on the pressure of the work gas films was obtained with preferential orientation in the directions (200) and (111). At a pressure of 1 x 10{sup -2} Torr only the direction (200) was observed. On the other hand to the pressure of 5 x 10{sup -3} Torr the deposited material this formed by a mixture of the orientation (200) and (111), being the direction (111) the predominant one. Thin films of Ti N were obtained with hardness of up to 24.0 GPa that makes to these attractive materials for mechanical applications. The hardness showed an approximately linear dependence with the energy density. (Author)

  10. Green emission in carbon doped ZnO films

    Directory of Open Access Journals (Sweden)

    L. T. Tseng

    2014-06-01

    Full Text Available The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR and low temperature photoluminescence (PL measurement.

  11. Green emission in carbon doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, L. T.; Yi, J. B., E-mail: jiabao.yi@unsw.edu.au; Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S. [School of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052 (Australia); Fan, H. M. [School of Chemical Engineering, Northwest University, Xi' an 710069 (China); Herng, T. S.; Ding, J. [Department of Materials Science and Engineering, National University of Singapore, 119260 (Singapore); Ionescu, M. [Australian Nuclear Science and Technology Organization, (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234 (Australia)

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  12. Modification of the Properties of Carbon Films for Photovoltaic Converters

    Directory of Open Access Journals (Sweden)

    S.O. Rudchenko

    2012-12-01

    Full Text Available The semiconductor materials with values of energy band gap in the range of 1-2 eV are the most suitable for manufacturing solar cells. These objects include some of the carbon allotropic modifications, as well as quantum dots on the surface of these materials, which use as the basis for the creation of new optoelectronic devices based on nanostructures. This paper presents the investigations of optical properties and structure of synthesized multilayer system diamond-like carbon film/ carbon quantum dots/C60film (DLC/Qdots/C60.

  13. Formation of ion tracks in amorphous silicon nitride films with MeV C{sub 60} ions

    Energy Technology Data Exchange (ETDEWEB)

    Kitayama, T.; Morita, Y.; Nakajima, K. [Department of Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan); Narumi, K.; Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Matsuda, M.; Sataka, M. [Nuclear Science Research Institute, Japan Atomic Energy Agency, Tokai, Naka, Ibaraki 319-1195 (Japan); Tsujimoto, M.; Isoda, S. [Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501 (Japan); Toulemonde, M. [CIMAP-GANIL (CEA-CNRS-ENSICAEN-Université de Caen Basse Normandie), Bd. H. Becquerel, 14070 Caen (France); Kimura, K., E-mail: kimura@kues.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 606-8501 (Japan)

    2015-08-01

    Amorphous silicon nitride (a-SiN) films (thickness 5–100 nm) were irradiated with 0.12–5 MeV C{sub 60}, 100 MeV Xe, 200 MeV Kr, and 200 and 420 MeV Au ions. Ion tracks were clearly observed using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) except for 100 MeV Xe and 200 MeV Kr. The observed HAADF-STEM images showed that the ion tracks consist of a low density core (0.5–2 nm in radius) and a high density shell (several nm in radius). The observed core and shell radii are not simply correlated with the electronic energy loss indicating that the nuclear energy loss plays an important role in the both core and shell formations. The observed track radii were well reproduced by the unified thermal spike model with two thresholds for shell and core formations.

  14. Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films%a-SiNx∶H薄膜的导电机制

    Institute of Scientific and Technical Information of China (English)

    王燕; 岳瑞峰

    2001-01-01

    研究了a-SiNx∶H薄膜的电导激活能与氮含量的关系。结果表明,随氮含量增加,样品表现出两种并行的电导机制:欧姆机制与Poole-Frenkel机制。采用两种电导机制拟合电流随温度变化曲线后得到了不同氮含量样品的电导激活能。由于氮在非晶硅中为施主类杂质,且具有特殊的结构组态,因而提出了一种调制掺杂模型解释了实验现象。%Dependence of conductivity activated energy on nitrogen contents in amorphous hydrogenated silicon nitride (a-SiNx∶H)films was studied.The results show that both Ohmic mechanism and Poole-Frenkel mechanism are responsible for the variations in the conductivity activated energies.Temperature dependence of the current can be analytically evaluated by means of the two mechanisms and the conductivity activated energies can be calculated for samples with different nitrogen contents.Since nitrogen is a donor-type impurity with special stoichiometry in a-SiNx∶H,we propose a modulated doping model to understand the dependence of the conductivity activated energy on N contents.

  15. A new carbon structure in annealed film coatings of the carbon-lead system

    Science.gov (United States)

    Volodin, V. N.; Tuleushev, Yu. Zh.; Zhakanbaev, E. A.; Tsai, K. V.; Rofman, O. V.

    2017-01-01

    Carbon-lead solid solutions coexisting with amorphous carbon have been obtained for the first time in a film coating deposited by ion-plasma sputtering. During subsequent vacuum annealing of carbon-lead films containing more than 68.5 at % Pb, this element almost completely evaporates to leave an amorphous carbon coating on a substrate. During annealing at 1100°C, this amorphous carbon crystallizes into a new hexagonal lattice with unit cell parameters a = 0.7603 nm and c = 0.8168 nm. Characteristic X-ray diffraction data for the identification of this phase are determined.

  16. Tribological behaviors of diamond-like carbon coatings on plasma nitrided steel using three BN-containing lubricants

    Energy Technology Data Exchange (ETDEWEB)

    Jia Zhengfeng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); College of Materials Science and Engineering, Liaocheng University, Liaocheng 252059 (China); Graduate School of the Chinese Academy of Sciences, Beijing 10039 (China); Wang Peng [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); Xia Yanqiu, E-mail: xiayanqiu@yahoo.com [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); Zhang Haobo; Pang Xianjuan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 10039 (China); Li Bin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Tianshui Middle Road, Lanzhou 73000 (China)

    2009-04-15

    In this work, diamond-like carbon (DLC) coatings were deposited on plasma nitrided AISI 1045 steel by magnetron sputtering. Three BN-containing additives and molybdenum dithiocarbamate (MoDTC) were added to poly-alpha-olefin (PAO) as additives. The additive content (mass fraction) in PAO was fixed at 0.5 wt%. The friction and wear characters of DLC coatings on nitrided steel discs sliding against AISI 52100 steel balls were tested under the lubricated conditions. It was found that borate esters have a higher load carrying capacity and much better anti-wear and friction-reducing ability than that of MoDTC. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to explore the properties of the worn surface and the mechanism of friction and wear. According to the XPS analysis, the adsorbed organic N-containing compounds and BN are, possibly, the primary reason for the novel borate esters to possess a relatively constant coefficient of friction and lower wear rate. On the other hand, possibly, the MoDTC molecules break down during sliding and produce many Mo-oxides, and then the Mo-oxides destroy the DLC coating because of its sharp edge crystalline solid structure. After destroying the DLC coating, the MoDTC react with metals and form MoS{sub 2} tribofilm, and decrease coefficient of friction of rubbing pairs.

  17. Correlation between iron self-diffusion and thermal stability in doped iron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil; Gupta, Mukul, E-mail: mgupta@csr.res.in, E-mail: dr.mukul.gupta@gmail.com; Kumar, D.; Reddy, V. R.; Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Amir, S. M. [Jülich Centre for Neutron Science, Forschungszentrum Jülich GmbH, Outstation at MLZ Lichtenbergstrasse 1, 85747 Garching (Germany); Korelis, Panagiotis; Stahn, Jochen [Laboratory for Neutron Scattering, Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland)

    2014-12-14

    Nanocrystalline Fe-X-N thin films (with doping X = 0, 3.1 at. % Al, 1.6 at. % Zr), were deposited using reactive ion beam sputtering. Magnetization study reveals that the deposited films exhibit a perpendicular magnetic anisotropy. Thermal stability of the films was investigated systematically and it was observed that the structural and the magnetic stability gets significantly enhanced with Al doping, whereas Zr doping has only a marginal effect. Fe self-diffusion, obtained using polarized neutron reflectivity, shows a suppression with both additives. A correlation between the thermal stability and the diffusion process gives a direct evidence that the enhancement in the thermal stability is primarily diffusion controlled. A combined picture of diffusion, structural, and magnetic stability has been drawn to understand the obtained results.

  18. Sub-picowatt resolution calorimetry with niobium nitride thin-film thermometer

    Energy Technology Data Exchange (ETDEWEB)

    Dechaumphai, Edward; Chen, Renkun, E-mail: rkchen@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-09-15

    High-resolution calorimetry has many important applications such as probing nanoscale thermal transport and studying the thermodynamics of biological and chemical systems. In this work, we demonstrated a calorimeter with an unprecedentedly high resolution at room temperature using a high-performance resistive thermometry material, niobium nitride (NbN{sub x}). Based on a theoretical analysis, we first showed that the heat flux resolution of a resistive-thermometry based calorimeter depends on the parasitic thermal conductance of the device and the temperature coefficient of resistance (TCR) of the thermometer, when the noise is limited by the Johnson noise. Based on this analysis, we then developed a calorimeter using NbN{sub x} as the thermometry material because it possesses both high TCR (∼0.67%/K) and a low thermal conductivity (k ∼ 1.1 W/m K). This calorimeter, when used with the modulated heating scheme, demonstrated an unprecedentedly high power resolution of 0.26 pW at room temperature. In addition, NbN{sub x} based resistive thermometry can also be extended to cryogenic temperature, where the TCR is shown to be significantly higher.

  19. Atomic-Resolution Observations of Semi-Crystalline IntegranularThin Films in Silicon Nitride

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Alexander; Idrobo, Juan C.; Cinibulk, Michael K.; Kisielowski, Christian; Browning, Nigel D.; Ritchie, Robert O.

    2005-08-01

    The thin intergranular phase in a silicon nitride (Si3N4)ceramic, which has been regarded for decades as having an entirely amorphous morphology, is shown to have a semi-crystalline structure. Using two different but complementary high-resolution electron microscopy methods, the intergranular atomic structure was directly imaged at the atomic level. These high-resolution images show that the atomic arrangement of the dopand element cerium takes very periodic positions not only along the interface between the intergranular phase and the Si3N4 matrix grains, but it arranges in a semi-crystalline structure that spans the entire width of the intergranular phase between two adjacent matrix grains, in principle connecting the two separate matrix grains. The result will have implications on the approach of understanding the materials properties of ceramics, most significantly on the mechanical properties and the associated computational modeling of the atomic structure of the thin intergranular phase in Si3N4 ceramics.

  20. Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

    Directory of Open Access Journals (Sweden)

    Luis A. Hernández

    2013-03-01

    Full Text Available Photoluminescence (PL studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE and a broad blue and green luminescence (BL, GL, which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

  1. LPCVD silicon-rich silicon nitride films for applications in micromechanics, studied with statistical experimental design

    NARCIS (Netherlands)

    Gardeniers, J.G.E.; Tilmans, H.A.C.; Visser, C.C.G.

    1996-01-01

    A systematic investigation of the influence of the process parameters temperature, pressure, total gas flow, and SiH2Cl2:NH3 gas flow ratio on the residual stress, the refractive index, and its nonuniformity across a wafer, the growth rate, the film thickness nonuniformity across a wafer, and the Si

  2. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  3. Platinum-coordinated graphitic carbon nitride nanosheet used for targeted inhibition of amyloid β-peptide aggregation

    Institute of Scientific and Technical Information of China (English)

    Meng Li; Yijia Guan; Zhaowei Chen; Nan Gao; Jinsong Ren; Kai Dong; Xiaogang Qu

    2016-01-01

    Amyloid β-peptide (Aβ) aggregation is a critical step in the pathogenesis of Alzheimer's disease (AD).Inhibition of Aβ production,dissolution of existing aggregates and clearance of Aβ represent valid therapeutic strategies against AD.Herein,a novel platinum(Ⅱ)-coordinated graphitic carbon nitride (g-C3N4)nanosheet (g-C3N4@Pt) has been designed to covalently bind to Aβ and modulate the peptide's aggregation and toxicity.Furthermore,g-C3N4@Pt nanosheets possess high photocatalytic activity and can oxygenate Aβ upon visible light irradiation,remarkably attenuating both the aggregation potency and neurotoxidty of Aβ.Due to its ability to cross the blood-brain barrier (BBB) and its good biocompatibility,g-C3N4@Pt nanosheet is a promising inhibitor of Aβ aggregation.This study may serve as a model for the engineering of novel multifunctional nanomaterials used for the treatment of AD.

  4. Porous graphitic carbon nitride synthesized via direct polymerization of urea for efficient sunlight-driven photocatalytic hydrogen production.

    Science.gov (United States)

    Zhang, Yuewei; Liu, Jinghai; Wu, Guan; Chen, Wei

    2012-09-07

    Energy captured directly from sunlight provides an attractive approach towards fulfilling the need for green energy resources on the terawatt scale with minimal environmental impact. Collecting and storing solar energy into fuel through photocatalyzed water splitting to generate hydrogen in a cost-effective way is desirable. To achieve this goal, low cost and environmentally benign urea was used to synthesize the metal-free photocatalyst graphitic carbon nitride (g-C₃N₄). A porous structure is achieved via one-step polymerization of the single precursor. The porous structure with increased BET surface area and pore volume shows a much higher hydrogen production rate under simulated sunlight irradiation than thiourea-derived and dicyanamide-derived g-C₃N₄. The presence of an oxygen atom is presumed to play a key role in adjusting the textural properties. Further improvement of the photocatalytic function can be expected with after-treatment due to its rich chemistry in functionalization.

  5. Photosensitization of Carbon Nitride Photoelectrodes with CdS: A Novel Architecture with Highly Efficient Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Xiaosong Zhou

    2014-01-01

    Full Text Available CdS with well-defined crystallinity is anchored on carbon nitride photoelectrodes by a successive chemical bath deposition. And the as-synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, ultraviolet-visible diffuse reflection spectroscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy techniques. The effect of the amount of CdS on the catalytic activity for the degradation of acid Orange II is investigated under visible light irradiation. Results show that the photoelectrodes composed of CdS/CN exhibit much higher catalytic activity than pure CN photoelectrodes. A possible photocatalytic mechanism of the CdS/CN electrodes is proposed under visible light irradiation.

  6. The function-led design of Z-scheme photocatalytic systems based on hollow carbon nitride semiconductors.

    Science.gov (United States)

    Zheng, Dandan; Pang, Chenyang; Wang, Xinchen

    2015-12-21

    A ternary photocatalyst has been successfully constructed through the integration of Au, CdS and hollow carbon nitride nanospheres (HCNS), where Au nanoparticles were designed to shuttle interparticle transfer of charge carriers between CdS and HCNS photosensitizers to establish two-photon (Z-scheme) photocatalytic tandem systems for solar fuel production. The solid-state CdS-Au-HCNS Z-scheme nanocomposites were efficient for H2 evolution (with a quantum yield of 8.7% at 420 nm) and CO2 reduction catalysis with visible light irradiation. This work further proves the feasibility of employing hollow conjugated polymer photocatalysts in the function-led design of artificial Z-type photosynthetic machinery on soft material interfaces.

  7. Dispersed conductive polymer nanoparticles on graphitic carbon nitride for enhanced solar-driven hydrogen evolution from pure water.

    Science.gov (United States)

    Sui, Yi; Liu, Jinghai; Zhang, Yuewei; Tian, Xike; Chen, Wei

    2013-10-07

    Developing new methods to improve the photocatalytic activity of graphitic carbon nitride (g-C₃N₄) for hydrogen (H₂) evolution has attracted intensive research interests. Here, we report that the g-C₃N₄ exhibits photocatalytic activity for H₂ evolution from pure water. And, the activity is dramatically improved by loading highly dispersed conductive polymer nanoparticles. The H₂ evolution rate increases up to 50 times for g-C₃N₄ with 1.5 wt% polypyrrole (PPy) nanoparticles on the surface. The reaction proceeding in a pure water system excludes the need for sacrificial agents. The role of the highly conductive PPy in enhancing H₂ evolution is as a surface junction to increase the number of photoinduced electrons, and to facilitate electron transfer to the interface.

  8. DFT Study on Structural and Mechanical Properties of Single-walled Carbon and Boron Nitride Nanotubes Functionalized with Carbenes

    Directory of Open Access Journals (Sweden)

    I.K. Petrushenko

    2016-10-01

    Full Text Available This paper presents quantum chemistry study on structural and mechanical properties of a series of single-walled carbon nanotubes (SWCNTs and boron nitride nanotubes (BNNTs functionalized with carbenes. At the PBE/SVP level, the obtained data on pristine nanotubes are in good accordance with the results of previous experimental and theoretical studies. The calculations show that carbenes functionalization, in general, distorts both SWNCTs and BNNTs frameworks, but there exists the difference between ‘axial’ and ‘circumferential’ functionalization. It turns out that in both cases elastic properties diminish with increasing concentration of adsorbents, however, the functionalized SWCNTs and BNNTs remain strong enough to be suitable for reinforcement of composites.

  9. Influence of Nitrided Layer on The Properties of Carbon Coatings Produced on X105CrMo17 Steel Under DC Glow-Discharge Conditions

    Directory of Open Access Journals (Sweden)

    Tomasz BOROWSKI

    2016-09-01

    Full Text Available In most cases, machine components, which come in contact with each other, are made of steel. Common steel types include 100Cr6 and X105CrMo17 are widely used in rolling bearings, which are subjected to high static loads. However, more and more sophisticated structural applications require increasingly better performance from steel. The most popular methods for improving the properties of steel is carburisation or nitriding. Unfortunately, when very high surface properties of steel are required, this treatment may be insufficient. Improvement of tribological properties can be achieved by increasing the hardness of the surface, reducing roughness or reducing the coefficient of friction. The formation of composite layers on steel, consisting of a hard nitride diffusion layer and an external carbon coating with a low coefficient of friction, seems to be a prospect with significant potential. The article describes composite layers produced on X105CrMo17 steel and defines their morphology, surface roughness and their functional properties such as: resistance to friction-induced wear, coefficient of friction and corrosion resistance. The layers have been formed at a temperature of 370°C in successive processes of: nitriding in low-temperature plasma followed by deposition of a carbon coating under DC glow-discharge conditions. An evaluation was also made of the impact of the nitrided layers on the properties and morphology of the carbon coatings formed by comparing them to coatings formed on non-nitrided X105CrMo17 steel substrates. A study of the surface topography, adhesion, resistance to friction-induced wear and corrosion shows the significant importance of the substrate type the carbon coatings are formed on.DOI: http://dx.doi.org/10.5755/j01.ms.22.3.7532

  10. Dual ion beam deposition of carbon films with diamondlike properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  11. Construction of carbon quantum dots/proton-functionalized graphitic carbon nitride nanocomposite via electrostatic self-assembly strategy and its application

    Energy Technology Data Exchange (ETDEWEB)

    Jian, Xuan; Liu, Xian; Yang, Hui-min; Li, Jia-gang; Song, Xiu-li; Dai, Hong-yan; Liang, Zhen-hai, E-mail: liangzhenh@sina.com

    2016-05-01

    Highlights: • An electrostatic self-assembly strategy was proposed to prepare CQDs/HpCN nanocomposite. • Carbon quantum dots (CQDs) attached onto surface of proton-functionalized graphitic carbon nitride (HpCN) through electrostatic attraction. • The CQDs/HpCN nanocomposite exhibited excellent photocatalytic and photoelectrochemical properties. - Abstract: Carbon quantum dots (CQDs) and graphitic carbon nitride (g-C{sub 3}N{sub 4}), as advanced metal-free material catalysts have been the focus of considerable attention because of their superior photocatalytic activities. In this study, we developed a novel approach to obtain CQDs/g-C{sub 3}N{sub 4} nanocomposite with effective interfacial contact by incorporating negatively charged CQDs and tailor-made proton-functionalized g-C{sub 3}N{sub 4}via the electrostatic self-assembly strategy. Then, the morphology and microstructure of the new nanocomposite were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet–visible diffuse reflectance spectroscopy (DRS) and X-ray photoelectron spectroscopy (XPS). The CQDs and proton-functionalized g-C{sub 3}N{sub 4} nanocomposite exhibited excellent electron transfer properties though electrochemical impedance spectroscopy (EIS), significantly enhanced photoactivity in the photoelectrochemical i–t curve test and degradation of methylene blue solution under visible light irradiation. These results demonstrated that the electrostatic self-assembly strategy process is a promising method of fabricating uniform metal-free material catalysts for an extensive range of applications.

  12. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Greczynski, Grzegorz, E-mail: grzgr@ifm.liu.se; Hultman, Lars [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Petrov, Ivan [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping, Sweden and Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Greene, J. E. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801(United States); Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)

    2015-09-15

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions

  13. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    Science.gov (United States)

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  14. Terahertz Science and Technology of Macroscopically Aligned Carbon Nanotube Films

    Science.gov (United States)

    Kono, Junichiro

    One of the outstanding challenges in nanotechnology is how to assemble individual nano-objects into macroscopic architectures while preserving their extraordinary properties. For example, the one-dimensional character of electrons in individual carbon nanotubes leads to extremely anisotropic transport, optical, and magnetic phenomena, but their macroscopic manifestations have been limited. Here, we describe methods for preparing macroscopic films, sheets, and fibers of highly aligned carbon nanotubes and their applications to basic and applied terahertz studies. Sufficiently thick films act as ideal terahertz polarizers, and appropriately doped films operate as polarization-sensitive, flexible, powerless, and ultra-broadband detectors. Together with recently developed chirality enrichment methods, these developments will ultimately allow us to study dynamic conductivities of interacting one-dimensional electrons in macroscopic single crystals of single-chirality single-wall carbon nanotubes.

  15. Plasma assisted metal-organic chemical vapor deposition of hard chromium nitride thin film coatings using chromium(III) acetylacetonate as the precursor

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, Arup; Kuppusami, P.; Lawrence, Falix; Raghunathan, V.S.; Antony Premkumar, P.; Nagaraja, K.S

    2004-06-15

    A new technique has been developed for depositing hard nanocrystalline chromium nitride (CrN) thin films on metallic and ceramic substrates using plasma assisted metal-organic chemical vapor deposition (PAMOCVD) technique. In this low temperature and environment-friendly process, a volatile mixture of chromium(III) acetylacetonate and either ammonium iodide or ammonium bifluoride were used as precursors. Nitrogen and hydrogen have been used as the gas precursors. By optimizing the processing conditions, a maximum deposition rate of {approx}0.9 {mu}m/h was obtained. A comprehensive characterization of the CrN films was carried out using X-ray diffraction (XRD), microhardness, and microscopy. The microstructure of the CrN films deposited on well-polished stainless steel (SS) showed globular particles, while a relatively smooth surface morphology was observed for coatings deposited on polished yittria-stabilized zirconia (YSZ)

  16. Oxidation of fluorinated amorphous carbon (a-CF(x)) films.

    Science.gov (United States)

    Yun, Yang; Broitman, Esteban; Gellman, Andrew J

    2010-01-19

    Amorphous fluorinated carbon (a-CF(x)) films have a variety of potential technological applications. In most such applications these films are exposed to air and undergo partial surface oxidation. X-ray photoemission spectroscopy has been used to study the oxidation of fresh a-CF(x) films deposited by magnetron sputtering. The oxygen sticking coefficient measured by exposure to low pressures (<10(-3) Torr) of oxygen at room temperature is on the order of S approximately 10(-6), indicating that the surfaces of these films are relatively inert to oxidation when compared with most metals. The X-ray photoemission spectra indicate that the initial stages of oxygen exposure (<10(7) langmuirs) result in the preferential oxidation of the carbon atoms with zero or one fluorine atom, perhaps because these carbon atoms are more likely to be found in configurations with unsaturated double bonds and radicals than carbon atoms with two or three fluorine atoms. Exposure of the a-CF(x) film to atmospheric pressures of air (effective exposure of 10(12) langmuirs to O(2)) results in lower levels of oxygen uptake than the low pressure exposures (<10(7) langmuirs). It is suggested that this is the result of oxidative etching of the most reactive carbon atoms, leaving a relatively inert surface. Finally, low pressure exposures to air result in the adsorption of both nitrogen and oxygen onto the surface. Some of the nitrogen adsorbed on the surface at low pressures is in a reversibly adsorbed state in the sense that subsequent exposure to low pressures of O(2) results in the displacement of nitrogen by oxygen. Similarly, when an a-CF(x) film oxidized in pure O(2) is exposed to low pressures of air, some of the adsorbed oxygen is displaced by nitrogen. It is suggested that these forms of nitrogen and oxygen are bound to free radical sites in the film.

  17. Aluminum nitride thin film based acoustic wave sensors for biosensing applications

    Science.gov (United States)

    Xu, Jianzeng

    In recent years, SAW devices have drawn enormous interest from the analytical assay and sensing business, especially in the biosensing area where highly sensitive, cost efficient and miniaturized sensors are in urgent needs. This dissertation focuses on the development of AIN thin film based SAW devices suitable for biosensing applications. AIN thin films have been synthesized on different orientations of sapphire substrates by a plasma source molecular beam epitaxy system. Surface and structural characterization techniques have been applied to investigate the film quality and the results show that high quality c-plane AIN was epitaxially grown on both c-plane and a-plane sapphire substrates. Complete process flows have been developed for the fabrication of SAW delay line and resonator devices. Important electrical parameters such as the insertion loss, bandwidth, and impedance have been measured to assist the design optimization and derivation the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency. On both c-plane and a-plane sapphire substrates, the SAW phase velocities (˜5700 m/s) and electromechanical coupling coefficients (˜0.3%) have been thoroughly mapped out with respect to the propagation direction and film thickness to wavelength ratio. The data are of practical importance for designing AIN-based SAW devices. A higher velocity (>6000 m/s) shear horizontal SAW mode has been discovered only at isolated propagating directions. This mode is especially suitable for aqueous biosensing due to its weak energy coupling to liquid. Much stronger response of the SH-SAW mode has been detected on the c-plane AIN on a-plane sapphire structure than on the c-plane AIN on c-plane sapphire structure, which could be attributed to large anisotropy in a-plane sapphire substrate. Linear frequency-temperature relationship has also been observed for both modes. We further quantify the mass sensitivity of the SAW and SH-SAW by

  18. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  19. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  20. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  1. Acceleration sensing based on piezoresistive effect of carbon nanotube films

    Institute of Scientific and Technical Information of China (English)

    WEI Feng-yan; SHEN Hui-juan; CAO Chun-lan; LIAO Ke-jun; HU Chen-guo

    2006-01-01

    Based on piezoresistive effect,the acceleration sensitivity of multi-walled canbon nanotube (MWNT) films was investigated.A three-point bending technique was presented to measure the piezoresistivity,which used a bending stress applied to the samples while making MWNT films wheeling with a rotational machine.The experimental results showed that the fractional increase in resistance increases linearly versus the increase of centripetal acceleration,and there is a linear relationship between the acceleration and the strain.These shed light on using carbon nanotube films as acceleration sensors for many potential applications.

  2. Assembly and Applications of Carbon Nanotube Thin Films

    Institute of Scientific and Technical Information of China (English)

    Hongwei ZHU; Bingqing WEI

    2008-01-01

    The ultimate goal of current research on carbon nanotubes (CNTs) is to make breakthroughs that advance nanotechnological applications of bulk CNT materials. Especially, there has been growing interest in CNT thin films because of their unique and usually enhanced properties and tremendous potential as components for use in nano-electronic and nano-mechanical device applications or as structural elements in various devices. If a synthetic or a post processing method can produce high yield of nanotube thin films, these structures will provide tremendous potential for fundamental research on these devices. This review will address the synthesis, the post processing and the device applications of self-assembled nanotube thin films.

  3. Atomic Scale Interface Manipulation, Structural Engineering, and Their Impact on Ultrathin Carbon Films in Controlling Wear, Friction, and Corrosion.

    Science.gov (United States)

    Dwivedi, Neeraj; Yeo, Reuben J; Yak, Leonard J K; Satyanarayana, Nalam; Dhand, Chetna; Bhat, Thirumaleshwara N; Zhang, Zheng; Tripathy, Sudhiranjan; Bhatia, Charanjit S

    2016-07-13

    Reducing friction, wear, and corrosion of diverse materials/devices using manipulation to engineer and control the friction, wear, corrosion, and structural characteristics of 0.7-1.7 nm carbon-based films on CoCrPt:oxide-based magnetic media. We demonstrate that when an atomically thin (∼0.5 nm) chromium nitride (CrNx) layer is sandwiched between the magnetic media and an ultrathin carbon overlayer (1.2 nm), it modifies the film-substrate interface, creates various types of interfacial bonding, increases the interfacial adhesion, and tunes the structure of carbon in terms of its sp(3) bonding. These contribute to its remarkable functional properties, such as stable and lowest coefficient of friction (∼0.15-0.2), highest wear resistance and better corrosion resistance despite being only ∼1.7 nm thick, surpassing those of ∼2.7 nm thick current commercial carbon overcoat (COC) and other overcoats in this work. While this approach has direct implications for advancing current magnetic storage technology with its ultralow thickness, it can also be applied to advance the protective and barrier capabilities of other ultrathin materials for associated technologies.

  4. Removal of Ozone by Carbon Nanotubes/Quartz Fiber Film.

    Science.gov (United States)

    Yang, Shen; Nie, Jingqi; Wei, Fei; Yang, Xudong

    2016-09-01

    Ozone is recognized as a harmful gaseous pollutant, which can lead to severe human health problems. In this study, carbon nanotubes (CNTs) were tested as a new approach for ozone removal. The CNTs/quartz fiber film was fabricated through growth of CNTs upon pure quartz fiber using chemical vapor deposition method. Ozone conversion efficiency of the CNTs/quartz fiber film was tested for 10 h and compared with that of quartz film, activated carbon (AC), and a potassium iodide (KI) solution under the same conditions. The pressure resistance of these materials under different airflow rates was also measured. The results showed that the CNTs/quartz fiber film had better ozone conversion efficiency but also higher pressure resistance than AC and the KI solution of the same weight. The ozone removal performance of the CNTs/quartz fiber film was comparable with AC at 20 times more weight. The CNTs played a dominant role in ozone removal by the CNTs/quartz fiber film. Its high ozone conversion efficiency, lightweight and free-standing properties make the CNTs/quartz fiber film applicable to ozone removal. Further investigation should be focused on reducing pressure resistance and studying the CNT mechanism for removing ozone.

  5. Thermal property tuning in aligned carbon nanotube films and random entangled carbon nanotube films by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Chen, Di; Wang, Xuemei [Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States); Bykova, Julia S.; Zakhidov, Anvar A. [The Alan G. MacDiarmid NanoTech Institute, University of Texas at Dallas, Richardson, Texas 75080 (United States); Shao, Lin, E-mail: lshao@tamu.edu [Department of Materials Science and Engineering, Texas A& M University, College Station, Texas 77843 (United States); Department of Nuclear Engineering, Texas A& M University, College Station, Texas 77843 (United States)

    2015-10-12

    Ion irradiation effects on thermal property changes are compared between aligned carbon nanotube (A-CNT) films and randomly entangled carbon nanotube (R-CNT) films. After H, C, and Fe ion irradiation, a focusing ion beam with sub-mm diameter is used as a heating source, and an infrared signal is recorded to extract thermal conductivity. Ion irradiation decreases thermal conductivity of A-CNT films, but increases that of R-CNT films. We explain the opposite trends by the fact that neighboring CNT bundles are loosely bonded in A-CNT films, which makes it difficult to create inter-tube linkage/bonding upon ion irradiation. In a comparison, in R-CNT films, which have dense tube networking, carbon displacements are easily trapped between touching tubes and act as inter-tube linkage to promote off-axial phonon transport. The enhancement overcomes the phonon transport loss due to phonon-defect scattering along the axial direction. A model is established to explain the dependence of thermal conductivity changes on ion irradiation parameters including ion species, energies, and current.

  6. The role of subsurface oxygen in the local oxidation of zirconium and zirconium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farkas, N.; Zhang, G.; Donnelly, K.M.; Evans, E.A.; Ramsier, R.D.; Dagata, J.A

    2004-01-30

    This paper discusses the growth kinetics of nanometer scale oxide structures grown by atomic force microscope (AFM) assisted lithography. The addition of nitrogen into the sputtering gas during zirconium deposition results in a crystalline ZrN material with oxygen held in solid solution. The diffusion rate of oxygen is high through the crystalline material, allowing it to participate in local anodization and resulting in tall oxide features at low relative humidity. These nanostructures are, in some cases, an order of magnitude higher than previously seen in other material systems. Higher nitrogen content in the plasma results in a crystalline to amorphous transition in the films, and the height enhancement of the AFM-grown features disappears. We propose that mass transport of subsurface oxygen has an influence on surface oxidation kinetics in this material system.

  7. Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

    Science.gov (United States)

    Choi, S. W.; Bachmann, K. J.; Lucovsky, G.

    1993-01-01

    Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

  8. Improved piezoelectricity of PVDF-HFP/carbon black composite films

    Science.gov (United States)

    Wu, Liangke; Yuan, Weifeng; Hu, Ning; Wang, Zhongchang; Chen, Chunlin; Qiu, Jianhui; Ying, Ji; Li, Yuan

    2014-04-01

    We report a substantial improvement of piezoelectricity for poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP) copolymer films by introducing carbon black (CB) into the PVDF-HFP to form PVDF-HFP/CB composite films. The optimized output voltage of the composite film at an optimal CB content of 0.5 wt% is found to be 204% of the pristine PVDF-HFP film. Its harvested electrical power density is 464% and 561% of the pristine PVDF-HFP film by using ac and dc circuits, respectively. Through Fourier transform infrared spectroscopy analysis, differential scanning calorimetry analysis, and polarized optical microscopy observations, we clarify the enhancement mechanism of piezoelectricity for the PVDF-HFP/CB composite films. We find that the added CB acts as nucleating agent during the initial formation of crystals, but imposes an insignificant effect on the α-β phase transformation during stretching. We also demonstrate that the addition of optimal CB reduces crystal size yet increases the number of crystals in the composite films. This is beneficial for the formation of elongated, oriented and fibrillar crystalline morphology during stretching and consequently results in a highly efficient poling process. The addition of overdosed CB leads to the formation of undersized crystals, lowered crystallinity, and hence reduced piezoelectric performance of the PVDF-HFP/CB composite films.

  9. Development and evaluation of gallium nitride-based thin films for x-ray dosimetry.

    Science.gov (United States)

    Hofstetter, Markus; Howgate, John; Sharp, Ian D; Stutzmann, Martin; Thalhammer, Stefan

    2011-06-07

    X-ray radiation plays an important role in medical procedures ranging from diagnostics to therapeutics. Due to the harm such ionizing radiation can cause, it has become common practice to closely monitor the dosages received by patients. To this end, precise online dosimeters have been developed with the dual objectives of monitoring radiation in the region of interest and improving therapeutic methods. In this work, we evaluate GaN thin film high electron mobility heterostructures with sub-mm(2) detection areas as x-ray radiation detectors. Devices were tested using 40-300 kV Bremsstrahlung x-ray sources. We find that the photoconductive device response exhibits a large gain, is almost independent of the angle of irradiation, and is constant to within 2% of the signal throughout this medical diagnostic x-ray range, indicating that these sensors do not require recalibration for geometry or energy. Furthermore, the devices show a high sensitivity to x-ray intensity and can measure in the air kerma rate (free-in-air) range of 1 µGy s(-1) to 10 mGy s(-1) with a signal stability of ±1% and a linear total dose response over time. Medical conditions were simulated by measurements of device responses to irradiation through human torso phantoms. Direct x-ray imaging is demonstrated using the index finger and wrist sections of a human phantom. The results presented here indicate that GaN-based thin film devices exhibit a wide range of properties, which make them promising candidates for dosimetry applications. In addition, with potential detection volumes smaller than 10(-6) cm(3), they are well suited for high-resolution x-ray imaging. Moreover, with additional engineering steps, these devices can be adapted to potentially provide both in vivo biosensing and x-ray dosimetry.

  10. Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Markus; Thalhammer, Stefan [Helmholtz Zentrum Muenchen, Ingolstaedter Landstrasse 1, 85764 Neuherberg (Germany); Howgate, John; Sharp, Ian D; Stutzmann, Martin, E-mail: stefan.thalhammer@helmholtz-muenchen.de [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

    2011-06-07

    X-ray radiation plays an important role in medical procedures ranging from diagnostics to therapeutics. Due to the harm such ionizing radiation can cause, it has become common practice to closely monitor the dosages received by patients. To this end, precise online dosimeters have been developed with the dual objectives of monitoring radiation in the region of interest and improving therapeutic methods. In this work, we evaluate GaN thin film high electron mobility heterostructures with sub-mm{sup 2} detection areas as x-ray radiation detectors. Devices were tested using 40-300 kV Bremsstrahlung x-ray sources. We find that the photoconductive device response exhibits a large gain, is almost independent of the angle of irradiation, and is constant to within 2% of the signal throughout this medical diagnostic x-ray range, indicating that these sensors do not require recalibration for geometry or energy. Furthermore, the devices show a high sensitivity to x-ray intensity and can measure in the air kerma rate (free-in-air) range of 1 {mu}Gy s{sup -1} to 10 mGy s{sup -1} with a signal stability of {+-}1% and a linear total dose response over time. Medical conditions were simulated by measurements of device responses to irradiation through human torso phantoms. Direct x-ray imaging is demonstrated using the index finger and wrist sections of a human phantom. The results presented here indicate that GaN-based thin film devices exhibit a wide range of properties, which make them promising candidates for dosimetry applications. In addition, with potential detection volumes smaller than 10{sup -6} cm{sup 3}, they are well suited for high-resolution x-ray imaging. Moreover, with additional engineering steps, these devices can be adapted to potentially provide both in vivo biosensing and x-ray dosimetry.

  11. Deposition of silicon nitride thin films by hot-wire CVD at 100 {sup o}C and 250 {sup o}C

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P., E-mail: palpuim@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Goncalves, L.M. [Departamento de Electronica Industrial, Universidade do Minho, 4800-058 Guimaraes (Portugal); Marins, E.S. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Viseu, T.M.R. [Departamento de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Ferdov, S. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Bouree, J.E. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France)

    2009-04-30

    Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 A/s) and at low substrate temperature. Films were deposited using NH{sub 3}/SiH{sub 4} flow rate ratios between 1 and 70 and substrate temperatures of 100 {sup o}C and 250 {sup o}C. For NH{sub 3}/SiH{sub 4} ratios between 40 and 70, highly transparent (T {approx} 90%), dense films (2.56-2.74 g/cm{sup 3}) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 A/s and < 0.5 A/s were obtained for films deposited at 100 {sup o}C and 250 {sup o}C, respectively. Films deposited at both substrate temperatures showed electrical conductivity {approx} 10{sup -14} {Omega}{sup -1} cm{sup -1} and breakdown fields > 10 MV cm{sup -1}.

  12. Novel metal-carbon(60) nanocrystalline magnetic thin films

    Science.gov (United States)

    Zheng, Lingyi

    1999-11-01

    A novel type of nanocrystalline magnetic thin films consisting of ferromagnetic metals and C60 have been developed and investigated. CO-C 60, Fe-C60 and CoFe-C60 with different concentrations of C60 thin films have been manufactured by thermal vapor codeposition. The microstructures and magnetic properties of the films can be significantly enhanced by varying the concentrations of C60 in the films. The stability of C60 and the compatibility of C60 with the metallic matrices are confirmed by mass spectrometry, Raman, WDS, XRD and TEM. Strong metal- C60 interaction is indicated by higher desorption temperatures of C60 in the meta- C60 films than that in pure C60 and the peak shift in Raman spectra. TEM shows that the grain size of the matrix metal decreases proportionally with increasing C60 concentration. Nanosize uniform columnar grains with nanoscale dispersion of C60 on the grain boundaries are commonly observed in the metal-C60 films. A self- assembly grain growth model based on the size effect of C60 and the metal-C60 interaction is proposed to delineate the microstructural evolution by C60. Calculations based on this model are consistent with experimental observations and give a grain size vs. C60 (carbon) concentration relationship. Grain growth retardation by C60 is observed in a CO-C60 film. Out-plane magnetic remanence and coercivity are enhanced in both the CO-C60 and Fe-C60 films. In the in-plane direction, the coercivity deceases in CO- C60 films but increases slightly in Fe- C60 films with increasing C60 concentrations. In-plane magnetic anisotropy is detected in CO-C60 films but not in Fe-C60 films. Strong temperature-dependent magnetization remanence and saturation are found in both the Co- C60 and Fe-C60 films with high C60 concentrations due to the nanosize grain effects. Temperature effects on the coercivity of CO- C60 and Fe-C60 are different and determined by the intrinsic magnetocrystalline anisotropy energy. Coercivity of the CoFe-C60 films

  13. Ultrathin graphitic carbon nitride nanosheets: a low-cost, green, and highly efficient electrocatalyst toward the reduction of hydrogen peroxide and its glucose biosensing application

    Science.gov (United States)

    Tian, Jingqi; Liu, Qian; Ge, Chenjiao; Xing, Zhicai; Asiri, Abdullah M.; Al-Youbi, Abdulrahman O.; Sun, Xuping

    2013-09-01

    In this communication, we demonstrate for the first time that ultrathin graphitic carbon nitride (g-C3N4) nanosheets can serve as a low-cost, green, and highly efficient electrocatalyst toward the reduction of hydrogen peroxide. We further demonstrate its application for electrochemical glucose biosensing in both buffer solution and human serum medium with a detection limit of 11 μM and 45 μM, respectively.In this communication, we demonstrate for the first time that ultrathin graphitic carbon nitride (g-C3N4) nanosheets can serve as a low-cost, green, and highly efficient electrocatalyst toward the reduction of hydrogen peroxide. We further demonstrate its application for electrochemical glucose biosensing in both buffer solution and human serum medium with a detection limit of 11 μM and 45 μM, respectively. Electronic supplementary information (ESI) available: Experimental section and supplementary figures. See DOI: 10.1039/c3nr02031b

  14. Investigating the Dispersion Behavior in Solvents, Biocompatibility, and Use as Support for Highly Efficient Metal Catalysts of Exfoliated Graphitic Carbon Nitride.

    Science.gov (United States)

    Ayán-Varela, M; Villar-Rodil, S; Paredes, J I; Munuera, J M; Pagán, A; Lozano-Pérez, A A; Cenis, J L; Martínez-Alonso, A; Tascón, J M D

    2015-11-04

    The liquid-phase exfoliation of graphitic carbon nitride (g-C3N4) to afford colloidal dispersions of two-dimensional flakes constitutes an attractive route to facilitate the processing and implementation of this novel material toward different technological applications, but quantitative knowledge about its dispersibility in solvents is lacking. Here, we investigate the dispersion behavior of exfoliated g-C3N4 in a wide range of solvents and evaluate the obtained results on the basis of solvent surface energy and Hildebrand/Hansen solubility parameters. Estimates of the three Hansen parameters for exfoliated g-C3N4 from the experimentally derived data yielded δD ≈ 17.8 MPa(1/2), δP ≈ 10.8 MPa(1/2), and δH ≈ 15.4 MPa(1/2). The relatively high δH value suggested that, contrary to the case of other two-dimensional materials (e.g., graphene or transition metal dichalcogenides), hydrogen-bonding plays a substantial role in the efficient interaction, and thus dispersibility, of exfoliated g-C3N4 with solvents. Such an outcome was attributed to a high density of primary and/or secondary amines in the material, the presence of which was associated with incomplete condensation of the structure. Furthermore, cell proliferation tests carried out on thin films of exfoliated g-C3N4 using murine fibroblasts suggested that this material is highly biocompatible and noncytotoxic. Finally, the exfoliated g-C3N4 flakes were used as supports in the synthesis of Pd nanoparticles, and the resulting hybrids exhibited an exceptional catalytic activity in the reduction of nitroarenes.

  15. Reactive Bonding Film for Bonding Carbon Foam Through Metal Extrusion

    CERN Document Server

    Chertok, Maxwell; Irving, Michael; Neher, Christian; Tripathi, Mani; Wang, Ruby; Zheng, Gayle

    2016-01-01

    Future tracking detectors, such as those under development for the High Luminosity LHC, will require mechanical structures employing novel materials to reduce mass while providing excellent strength, thermal conductivity, and radiation tolerance. Adhesion methods for such materials are under study at present. This paper demonstrates the use of reactive bonding film as an adhesion method for bonding carbon foam.

  16. Flexible diamond-like carbon film coated on rubber

    NARCIS (Netherlands)

    Pei, Y.T.; Bui, X.L.; Pal, J.P. van der; Martinez-Martinez, D.; Hosson, J.Th.M. De

    2013-01-01

    Dynamic rubber seals are major sources of friction of lubrication systems and bearings, which may take up to 70% of the total friction. The solution we present is to coat rubbers with diamond-like carbon (DLC) thin films by which the coefficient of friction is reduced to less than one tenth. Coating

  17. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  18. Scattering of terahertz radiation from oriented carbon nanotube films

    DEFF Research Database (Denmark)

    Eichhorn, Finn; Jepsen, Peter Uhd; Schroeder, Nicholas;

    2009-01-01

    Session title: IThC-THz Interactions with Condensed Matter. We report on the use of terahertz time-domain spectroscopy to measure scattering from multi-walled carbon nanotubes aligned normal to the film plane. Measurements indicate scattering from the nanotubes is significantly stronger than...

  19. Electrochemiluminescent Properties of Organic Films with Incorporated Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Yu.T. Zholudov

    2012-06-01

    Full Text Available This work describes the study of the electrochemical and electrochemiluminescent properties of electrodes modified by films of polyvinyl alcohol containing luminophor tris-bipyridine ruthenium and carbon nanotubes. Studied electrode structures showed good applicability for the development of nanotechnological ECL-sensors intended for the assay in aqueous mediums.

  20. Metal-Free Oxidation of α-Hydroxy Ketones to 1,2-Diketones Catalyzed by Mesoporous Carbon Nitride with Visible Light

    Institute of Scientific and Technical Information of China (English)

    郑志硕; 周小松

    2012-01-01

    As a photocatalyst, mesoporous carbon nitride (mpg-C3N4) shows higher photocatalytic activities in organic synthesis. Herein we report an mpg-C3N4-catalyzed oxidation of α-hydroxy ketones to synthesize 1,2-diketones using visible light. This transformation represents a green and highly efficient synthetic route to synthesize 1,2-diketones for which catalytic approaches are scarce.

  1. Porous, single crystalline titanium nitride nanoplates grown on carbon fibers: excellent counter electrodes for low-cost, high performance, fiber-shaped dye-sensitized solar cells.

    Science.gov (United States)

    Chen, Liang; Dai, Hui; Zhou, Yong; Hu, Yingjie; Yu, Tao; Liu, Jianguo; Zou, Zhigang

    2014-11-28

    An excellent, platinum free fiber counter electrode (CE) was successfully fabricated, consisting of porous, single crystalline titanium nitride (TiN) nanoplates grown on carbon fibers (CF). The fiber-shaped dye-sensitized solar cells (FDSSCs) based on the TiN-CF CE show a high conversion efficiency of 7.20%, comparable or even superior to that of the Pt wire (6.23%).

  2. High conductivity transparent carbon nanotube films deposited from superacid

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, David S; Lee, Roland; Hu Liangbing [Unidym Incorporated, 1244 Reamwood Drive, Sunnyvale, CA 94089 (United States); Heintz, Amy M; Moore, Bryon; Cucksey, Chad; Risser, Steven, E-mail: dhecht@gmail.com [Battelle, 505 King Avenue, Columbus, OH 43201 (United States)

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 {Omega}/sq and 90.9% respectively, which corresponds to a DC conductivity of 12 825 S cm{sup -1} and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  3. High conductivity transparent carbon nanotube films deposited from superacid.

    Science.gov (United States)

    Hecht, David S; Heintz, Amy M; Lee, Roland; Hu, Liangbing; Moore, Bryon; Cucksey, Chad; Risser, Steven

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 Ω/sq and 90.9% respectively, which corresponds to a DC conductivity of 12,825 S cm(-1) and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  4. Graphene-analogue carbon nitride: novel exfoliation synthesis and its application in photocatalysis and photoelectrochemical selective detection of trace amount of Cu²⁺.

    Science.gov (United States)

    Xu, Hui; Yan, Jia; She, Xiaojie; Xu, Li; Xia, Jiexiang; Xu, Yuanguo; Song, Yanhua; Huang, Liying; Li, Huaming

    2014-01-01

    Graphene-analogue nanostructures defined as a new kind of promising materials with unique electronic, surface and optical properties have received much attention in the fields of catalysis, energy storage, sensing and electronic devices. Due to the distinctive structure characteristics of the graphene-analogue materials, they brought novel and amazing properties. Herein, graphene-analogue carbon nitride (GA-C₃N₄) was synthesized by high-yield, large-scale thermal exfoliation from the graphitic C₃N₄-based intercalation compound. Graphene-analogue carbon nitride exhibited 2D thin-layer structure with 6-9 atomic thickness, a high specific surface area of 30.1 m(2) g(-1), increased photocurrent responses and improved electron transport ability, which could give rise to enhancing the photocatalytic activity and stability. The graphene-analogue carbon nitride had a new features that could make it suitable as a sensor for Cu(2+) determination. So GA-C₃N₄ is a new but promising candidate for heavy metal ions (Cu(2+)) determination in water environment. The photocatalytic mechanism and photoelectrochemical selective sensing of Cu(2+) were also discussed.

  5. Theoretical study of interaction between Tacrine and finite-length Al-doped Carbon and Boron nitride Nanotubes: A Semiempirical drug delivery study in thermodynamic view

    Directory of Open Access Journals (Sweden)

    Nasrin Zeighami

    2014-12-01

    Full Text Available In order to extend our previous theoretical calculations that dealt with the thermochemistry of doping the single walled boron nitride nano tubes, BNNTs, and carbon nanotubes ,CNTs, with alminium atoms [1], we have used the AM 1, PM 3, and PM 6 semiempirical methods to investigate the interaction of the tacrine molecule (a drug for the treatment of Alzheimer's disease with the side-walls of aluminum doped boron nitride and carbon nano tubes in thermodynamic views.At first, the frequency calculations were carried out to confirm the stability of the involved structures. In addition, the theoretical thermodynamic study of tacrine adsorption onto the considered nanotubes was performed and the thermodynamic functions such as enthalpy changes, entropy changes and Gibbs free energy changes of the adsorption process were evaluated at different temperatures. Our results suggest the aluminum doped boron nitride nano tubes and alminium doped carbon nano tubes may be considered as the proper carries for the drug delivery of tacrine.

  6. Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Yucui Wu

    2013-01-01

    Full Text Available We review the present status of single-walled carbon nanotubes (SWCNTs for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs. The most popular SWCNT growth method is chemical vapor deposition (CVD, including plasma-enhanced chemical vapor deposition (PECVD, floating catalyst chemical vapor deposition (FCCVD, and thermal CVD. Carbon nanotubes (CNTs used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

  7. STUDY OF RAY IRRADIATION ON DIAMOND-LIKE CARBON FILMS

    Institute of Scientific and Technical Information of China (English)

    G.A.Liu; T.M.Wang; E.Q.Xie

    2002-01-01

    Diamond-like carbon (DLC) films have been deposited on glass substrates using radio-frequency (rf) plasma deposition method, γ-ray, ultraviolet (UV) ray were used toirradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were usedto characterize the changing characteristics of SP3 C-H bond and hydrogen content inthe films due to the irradiations. The results show that, the damage degrees induced bythe UV ray on the SP3 C-H bonds are much stronger than that by the γ-ray. When theirradiation dose of γ-ray reaches 10× 104Gy, the SP3 C-H bond reduces about 50% innumber. The square electrical resistance of the films is reduced due to the irradiationof UV ray and this is caused by severe oxidation of the films. By using the results onoptical gap of the films and the fully constrained network theory, the hydrogen contentin the as-deposited films is estimated to be 10-25at.%.

  8. A graphitic hollow carbon nitride nanosphere as a novel photochemical internalization agent for targeted and stimuli-responsive cancer therapy

    Science.gov (United States)

    Liu, Chaoqun; Chen, Zhaowei; Wang, Zhenzhen; Li, Wei; Ju, Enguo; Yan, Zhengqing; Liu, Zhen; Ren, Jinsong; Qu, Xiaogang

    2016-06-01

    As a novel technique, photochemical internalization (PCI) has been employed as a new approach to overcome endo/lysosomal restriction, which is one of the main difficulties in both drug and gene delivery. However, the complicated synthesis procedure (usually requiring the self-assembly of polymers, photosensitizers and cargos) and payload specificity greatly limit its further application. In this paper, we employ a highly fluorescent graphitic hollow carbon nitride nanosphere (GHCNS) to simultaneously serve as a PCI photosensitizer, an imaging agent and a drug carrier. The surface modification of GHCNS with multifunctional polysaccharide hyaluronic acid (HA) endows the system with colloidal stability, biocompatibility and cancer cell targeting ability. After CD44 receptor-mediated endocytosis, the nanosystem is embedded in endo/lysosomal vesicles and HA could be specially degraded by hyaluronidase (Hyal), inducing open pores. In the following, with visible light illumination, GHCNS could produce ROS that effectively induced lipid peroxidation and caused endo/lysosomal membrane break, accelerating the cytoplasmic release of the drug in the targeted and irradiated cells. As a result, significantly increased therapeutic potency and specificity against cancer cells could be achieved.As a novel technique, photochemical internalization (PCI) has been employed as a new approach to overcome endo/lysosomal restriction, which is one of the main difficulties in both drug and gene delivery. However, the complicated synthesis procedure (usually requiring the self-assembly of polymers, photosensitizers and cargos) and payload specificity greatly limit its further application. In this paper, we employ a highly fluorescent graphitic hollow carbon nitride nanosphere (GHCNS) to simultaneously serve as a PCI photosensitizer, an imaging agent and a drug carrier. The surface modification of GHCNS with multifunctional polysaccharide hyaluronic acid (HA) endows the system with colloidal

  9. Porous graphitic carbon nitride synthesized via direct polymerization of urea for efficient sunlight-driven photocatalytic hydrogen production

    Science.gov (United States)

    Zhang, Yuewei; Liu, Jinghai; Wu, Guan; Chen, Wei

    2012-08-01

    Energy captured directly from sunlight provides an attractive approach towards fulfilling the need for green energy resources on the terawatt scale with minimal environmental impact. Collecting and storing solar energy into fuel through photocatalyzed water splitting to generate hydrogen in a cost-effective way is desirable. To achieve this goal, low cost and environmentally benign urea was used to synthesize the metal-free photocatalyst graphitic carbon nitride (g-C3N4). A porous structure is achieved via one-step polymerization of the single precursor. The porous structure with increased BET surface area and pore volume shows a much higher hydrogen production rate under simulated sunlight irradiation than thiourea-derived and dicyanamide-derived g-C3N4. The presence of an oxygen atom is presumed to play a key role in adjusting the textural properties. Further improvement of the photocatalytic function can be expected with after-treatment due to its rich chemistry in functionalization.Energy captured directly from sunlight provides an attractive approach towards fulfilling the need for green energy resources on the terawatt scale with minimal environmental impact. Collecting and storing solar energy into fuel through photocatalyzed water splitting to generate hydrogen in a cost-effective way is desirable. To achieve this goal, low cost and environmentally benign urea was used to synthesize the metal-free photocatalyst graphitic carbon nitride (g-C3N4). A porous structure is achieved via one-step polymerization of the single precursor. The porous structure with increased BET surface area and pore volume shows a much higher hydrogen production rate under simulated sunlight irradiation than thiourea-derived and dicyanamide-derived g-C3N4. The presence of an oxygen atom is presumed to play a key role in adjusting the textural properties. Further improvement of the photocatalytic function can be expected with after-treatment due to its rich chemistry in

  10. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    Science.gov (United States)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  11. The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.

    Science.gov (United States)

    Sahu, B B; Yin, Y Y; Tsutsumi, T; Hori, M; Han, Jeon G

    2016-05-14

    Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications.

  12. Carbide-Derived Carbon Films for Integrated Electrochemical Energy Storage

    Science.gov (United States)

    Heon, Min

    Active RFID tags, which can communicate over tens or even hundreds of meters, MEMS devices of several microns in size, which are designed for the medical and pharmaceutical purposes, and sensors working in wireless monitoring systems, require microscale power sources that are able to provide enough energy and to satisfy the peak power demands in those applications. Supercapacitors have not been an attractive candidate for micro-scale energy storage, since most nanoporous carbon electrode materials are not compatible with micro-fabrication techniques and have failed to meet the requirements of high volumetric energy density and small form factor for power supplies for integrated circuits or microelectronic devices or sensors. However, supercapacitors can provide high power density, because of fast charging/discharging, which can enable self-sustaining micro-modules when combined with energy-harvesting devices, such as solar cell, piezoelectric or thermoelectric micro-generators. In this study, carbide-derived carbon (CDC) films were synthesized via vacuum decomposition of carbide substrates and gas etching of sputtered carbide thin films. This approach allowed manufacturing of porous carbon films on SiC and silicon substrates. CDC films were studied for micro-supercapacitor electrodes, and showed good double layer capacitance. Since the gas etching technique is compatible with conventional micro-device fabrication processes, it can be implemented to manufacture integrated on-chip supercapacitors on silicon wafers.

  13. Structural and biological properties of carbon nanotube composite films

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, Roger J. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)]. E-mail: roger.narayan@mse.gatech.edu; Berry, C.J. [Environmental Biotechnology Section, Savannah River National Laboratory, Aiken, SC 29808 (United States); Brigmon, R.L. [Environmental Biotechnology Section, Savannah River National Laboratory, Aiken, SC 29808 (United States)

    2005-11-20

    Carbon nanotube composite films have been developed that exhibit unusual structural and biological properties. These novel materials have been created by pulsed laser ablation of graphite and bombardment of nitrogen ions at temperatures between 600 and 700 deg. C. High-resolution transmission electron microscopy and radial distribution function analysis demonstrate that this material consists of sp{sup 2}-bonded concentric ribbons that are wrapped approximately 15 deg. normal to the silicon substrate. The interlayer order in this material extends to approximately 15-30 A. X-ray photoelectron spectroscopy and Raman spectroscopy data suggest that this material is predominantly trigonally coordinated. The carbon nanotube composite structure results from the use of energetic ions, which allow for non-equilibrium growth of graphitic planes. In vitro testing has revealed significant antimicrobial activity of carbon nanotube composite films against Staphylococcus aureus and Staphylococcus warneri colonization. Carbon nanotube composite films may be useful for inhibiting microorganism attachment and biofilm formation in hemodialysis catheters and other medical devices.

  14. Study on behavior of plasma nitrided 316L in PEMFC working conditions

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Rujin [Institute of Materials and Technology, Dalian Maritime University, Linghailu No.1, Ganjingzi District, Dalian, Lianoing 116026 (China); College of Materials and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Sun, Juncai [Institute of Materials and Technology, Dalian Maritime University, Linghailu No.1, Ganjingzi District, Dalian, Lianoing 116026 (China); Wang, Jianli [Department of Basic Science, Changchun University of Technology, Changchun 130012 (China)

    2008-12-15

    Stainless steel bipolar plates for the polymer electrolyte membrane fuel cell (PEMFC) offer many advantages over conventional machined graphite and graphite-composites. However, the interfacial ohmic loss between the metallic bipolar plate and membrane electrode assembly due to corrosion decreases the overall power output of PEMFC. A lower temperature (at 370 C) plasma nitriding was applied to modify the surface of stainless steel 316L bipolar plates. The results of electrochemical measurements show that corrosion resistance of the plasma nitrided 316L is improved in simulated PEMFC anode/cathode environments purged with H{sub 2}/air at 70 C. The surface conductivity of the nitrided layer is better than that of the air-formed oxide film. The interfacial contact resistance (ICR) between the passive film and carbon paper increases very little after potentiostatic polarization for 4 h, which indicates potential for good stability of this material in highly corrosive fuel cell environments. (author)

  15. A comparison between the mechanical and thermal properties of single-walled carbon nanotubes and boron nitride nanotubes

    Science.gov (United States)

    Li, Ting; Tang, Zhenan; Huang, Zhengxing; Yu, Jun

    2017-01-01

    Carbon nanotubes (CNTs) are semimetallic while boron nitride nanotubes (BNNTs) are wide band gap insulators. Despite the discrepancy in their electrical properties, a comparison between the mechanical and thermal properties of CNTs and BNNTs has a significant research value for their potential applications. In this work, molecular dynamics simulations are performed to systematically investigate the mechanical and thermal properties of CNTs and BNNTs. The calculated Young's modulus is about 1.1 TPa for CNTs and 0.72 TPa for BNNTs under axial compressions. The critical bucking strain and maximum stress are inversely proportional to both diameter and length-diameter ratio and CNTs are identified axially stiffer than BNNTs. Thermal conductivities of (10, 0) CNTs and (10, 0) BNNTs follow similar trends with respect to length and temperature and are lower than that of their two-dimensional counterparts, graphene nanoribbons (GNRs) and BN nanoribbons (BNNRs), respectively. As the temperature falls below 200 K (130 K) the thermal conductivity of BNNTs (BNNRs) is larger than that of CNTs (GNRs), while at higher temperature it is lower than the latter. In addition, thermal conductivities of a (10, 0) CNT and a (10, 0) BNNT are further studied and analyzed under various axial compressive strains. Low-frequency phonons which mainly come from flexure modes are believed to make dominant contribution to the thermal conductivity of CNTs and BNNTs.

  16. Largely enhanced dielectric properties of carbon nanotubes/polyvinylidene fluoride binary nanocomposites by loading a few boron nitride nanosheets

    Science.gov (United States)

    Yang, Minhao; Zhao, Hang; He, Delong; Bai, Jinbo

    2016-08-01

    The ternary nanocomposites of boron nitride nanosheets (BNNSs)/carbon nanotubes (CNTs)/polyvinylidene fluoride (PVDF) are fabricated via a combination of solution casting and extrusion-injection processes. The effects of BNNSs on the electrical conductivity, dielectric behavior, and microstructure changes of CNTs/PVDF binary nanocomposites are systematically investigated. A low percolation value (fc) for the CNTs/PVDF binary system is obtained due to the integration of solution and melting blending procedures. Two kinds of CNTs/PVDF binary systems with various CNTs contents (fCNTs) as the matrix are discussed. The results reveal that compared with CNTs/PVDF binary systems at the same fCNTs, the ternary BNNSs/CNTs/PVDF nanocomposites exhibit largely enhanced dielectric properties due to the improvement of the CNTs dispersion state and the conductive network. The dielectric constant of CNTs/PVDF binary nanocomposite with 6 vol. % CNTs (fCNTs fc), it displays a 43.32% improvement from 1325 to 1899 after the addition of 3 vol. % BNNSs. The presence of BNNSs facilitates the formation of the denser conductive network. Meanwhile, the ternary BNNSs/CNTs/PVDF systems exhibit a low dielectric loss. The adjustable dielectric properties could be obtained by employing the ternary systems due to the microstructure changes of nanocomposites.

  17. Gold and graphific carbon nitride hybrid plasmonic nanocomposites for photocatalytic reduction of 4-nitrophenol and 4-nitrobenzenethiol

    Science.gov (United States)

    Yan, Jiao; Xiao, Yuli; Liang, Xiu; Yang, Nan; Zhao, Dongyu; Yin, Penggang

    2016-09-01

    Gold nanoparticles (GNPs) were deposited on the surface of graphitic carbon nitride (g-C3N4) via an in situ reduction method using either sodium borohydride or trisodium citrate as the reducing agent. The corresponding hybrid Au/C3N4 nanocatalysts, viz., Au@CN-B or Au@CN-C, exhibited high light-driven catalytic activities toward reduction of 4-nitrophenol (4-NP) under either visible-light or ultra violet (UV) irradiation. The photocatalytic efficiency of Au@CN-B was only slightly higher than that of Au@CN-C, most likely owing to the average grain size difference between the both. However, as for plasmon-driven catalytic reactions monitored by surface-enhanced Raman scattering (SERS) technique, an immediate and almost-complete reduction of 4-nitrobenzenethiol (4-NBT) to p,p‧-dimercaptoazobenzene (DMAB) occurred when Au@CN-B was utilized as both the nanocatalyst and SERS substrate, whereas distinct characteristic peaks of 4-NBT still existed for the case of Au@CN-C.

  18. Transition metal (Fe, Co and Ni) oxide nanoparticles grafted graphitic carbon nitrides as efficient optical limiters and recyclable photocatalysts

    Science.gov (United States)

    Sridharan, Kishore; Kuriakose, Tintu; Philip, Reji; Park, Tae Joo

    2014-07-01

    A single-step pyrolysis assisted route towards the large scale fabrication of metal oxide nanoparticles (Fe2O3, Co3O4 and NiO) ingrained in graphitic carbon nitride (GCN) is demonstrated. Urea, an abundantly available precursor, plays a dual role during the synthesis: while it acts as a reducing agent, it also gets converted to GCN. The formation of GCN and the in-situ growth and embedment of oxide nanoparticles are discussed on the basis of the experimental results. The wide absorption of the samples in the visible light region makes them suitable for nonlinear transmission and photocatalytic activity studies. Visible light photocatalytic activities of the samples are studied by monitoring the degradation of Rhodamine B dye. Optical limiting properties of the prepared samples are studied through the open aperture z-scan technique using 5 ns laser pulses at a wavelength of 532 nm. The cost-efficient and time saving synthetic approach is complemented by the magnetic behaviour of the samples, which enables their use as recyclable photocatalyst and magnetically controllable optical limiters.

  19. Sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride photocatalyst: insights from first principles.

    Science.gov (United States)

    Stolbov, Sergey; Zuluaga, Sebastian

    2013-02-27

    We present here results of our first-principles studies of the sulfur doping effects on the electronic and geometric structures of graphitic carbon nitride (g-C(3)N(4)). Using the ab initio thermodynamics approach combined with some kinetic analysis, we reveal the favorable S-doping configurations. By analyzing the valence charge densities of the doped and undoped systems, we find that sulfur partially donates its p(x)- and p(y)- electrons to the system with some back donation to the S p(z)-states. To obtain an accurate description of the excited electronic states, we calculate the electronic structure of the systems using the GW method. The band gap width calculated for g-C(3)N(4) is found to be equal to 2.7 eV, which is in agreement with experiment. We find the S doping causes a significant narrowing of the gap. Furthermore, the electronic states just above the gap become occupied upon doping, making the material a conductor. Analysis of the projected local density of states provides an insight into the mechanism underlying such changes in the electronic structure of g-C(3)N(4) upon S doping. Based on our results, we propose a possible explanation for the S-doping effect on the photocatalytic properties of g-C(3)N(4) observed in experiments.

  20. Polymeric Graphitic Carbon Nitride Doped with CuO Dispersed on Dealuminated Clinoptilolite (CuO/HCP: Synthesis and Characterisation

    Directory of Open Access Journals (Sweden)

    Saheed Olalekan Sanni

    2015-01-01

    Full Text Available CuO dispersed on dealuminated clinoptilolite (CuO/HCP and further doped with polymeric graphitic carbon nitride (CuO/HCP-g-C3N4 was synthesized through 2 facile routes: precipitation method for CuO/HCP and impregnation through ultrasonication method for the hybrid composite material. The hybrid composite material crystalline phase, surface morphology, and structural and thermal properties were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, energy-dispersive X-ray analysis (EDAX, Fourier transform infrared spectroscopy (FTIR, and thermal analysis. The formation of the hybrid composite material was confirmed by XRD showing crystalline phase of CuO and g-C3N4 present on the surface of dealuminated clinoptilolite (HCP. SEM images analysis depicts no aggregation of the mixed metal oxide semiconductor nanoparticles at the center of HCP. The hybrid composite material, CuO/HCP-g-C3N4, with a good homogeneously dispersed metal oxide conductor having excellent catalytic activities has been synthesized.

  1. Application of gallium nitride nanostructures and nitrogen doped carbon spheres as supports for the hydrogenation of cinnamaldehyde.

    Science.gov (United States)

    Kente, Thobeka; Dube, Sibongile M A; Coville, Neil J; Mhlanga, Sabelo D

    2013-07-01

    This paper reports on the synthesis and use of nanostructures of gallium nitride (GaN NSs) and nitrogen doped carbon spheres (NCSs) as support materials for the hydrogenation of cinnamaldehyde. This study provides the first investigation of GaN as a catalyst support in hydrogenation reactions. The GaN NSs were synthesized via chemical vapour deposition (CVD) in a double stage furnace (750 degrees C) while NCSs were made by CVD in a single stage furnace (950 degrees C) respectively. TEM analysis revealed that the GaN NSs were rod-like with average diameters of 200 nm, while the NCSs were solid with smoother surfaces, and with diameters of 450 nm. Pd nanoparticles (1 and 3% loadings) were uniformly dispersed on acid functionalized GaN NSs and NCS. The Pd nanoparticles had average diameters that were influenced by the type of support material used. The GaN NSs and NCSs were tested for the selective hydrogenation of cinnamaldehyde in isopropanol at 40 and 60 degrees C under atmospheric pressure. A comparative study of the activity of the nanostructured materials revealed that the order of catalyst activity was 3% Pd/GaN > 3% Pd/NCSs > 1% Pd/NCSs > 1% Pd/GaN. However, 100% selectivity to hydrocinnamaldehyde (HCALD) was obtained with 1% Pd/GaN at reasonable conversion rates.

  2. Highly efficient photocatalytic H₂ evolution from water using visible light and structure-controlled graphitic carbon nitride.

    Science.gov (United States)

    Martin, David James; Qiu, Kaipei; Shevlin, Stephen Andrew; Handoko, Albertus Denny; Chen, Xiaowei; Guo, Zhengxiao; Tang, Junwang

    2014-08-25

    The major challenge of photocatalytic water splitting, the prototypical reaction for the direct production of hydrogen by using solar energy, is to develop low-cost yet highly efficient and stable semiconductor photocatalysts. Herein, an effective strategy for synthesizing extremely active graphitic carbon nitride (g-C3N4) from a low-cost precursor, urea, is reported. The g-C3N4 exhibits an extraordinary hydrogen-evolution rate (ca. 20,000 μmol h(-1) g(-1) under full arc), which leads to a high turnover number (TON) of over 641 after 6 h. The reaction proceeds for more than 30 h without activity loss and results in an internal quantum yield of 26.5% under visible light, which is nearly an order of magnitude higher than that observed for any other existing g-C3N4 photocatalysts. Furthermore, it was found by experimental analysis and DFT calculations that as the degree of polymerization increases and the proton concentration decreases, the hydrogen-evolution rate is significantly enhanced.

  3. Density functional theory study of ultrasmall diameter (2,2) boron nitride, silicon carbide, and carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Fakhrabad, Davoud Vahedi; Shahtahmassebi, Nasser [Nano Research Center, Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Movlarooy, Tayebeh [Department of Physics, Shahrood University of Technology, Shahrood (Iran, Islamic Republic of)

    2012-05-15

    We present a first principles calculation on the electronic structure and optical properties of ultrasmall-diameter (2,2) boron nitride, silicon carbide, and carbon nanotubes (BNNT, SiCNT, and CNT) by using full potential linear augmented plane wave (FP-LAPW) and pseudo potential plane wave (PP-PW) methods. The atomic geometries of all considered models are optimized. Calculations of optical spectra are performed under electric fields polarized both parallel and perpendicular with respect to the nanotube (NT) axis. Our results show that the dielectric function is anisotropic and it is revealed that (2,2) SiCNT would be better dielectric material than (2,2) BNNT. We have calculated the first, second and third optical transitions for the considered models. The value of the optical gap for (2,2) BNNT is obtained much larger than that of (2,2) SiCNT and (2,2) CNT. The results show that contrary to the (2,2) CNT being metallic, the (2,2) BNNT, and (2,2) SiCNT are wide indirect gap semiconductors. We also present the energy loss function; in this case the intertube interactions play an important role with respect to the optical spectroscopy. Our results revealed that unlike the dielectric function, the calculated energy loss function show rather weak anisotropy. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. A simple fabrication for sulfur doped graphitic carbon nitride porous rods with excellent photocatalytic activity degrading RhB dye

    Science.gov (United States)

    Fan, Qianjing; Liu, Jianjun; Yu, Yingchun; Zuo, Shengli; Li, Baoshan

    2017-01-01

    Constructing special nanostructures with large surface areas and tuning the band gap by element doping are efficient strategies to enhance the photocatalytic activity of semiconductor materials. Here we combined both strategies in one material to form sulfur-doped graphitic carbon nitride porous rods (S-pg-C3N4) in one pot by simply pyrolysis of the melamine-trithiocyanuric acid complex with different temperatures. The samples were characterized by XRD, FT-IR, and elemental analysis; nitrogen adsorption isotherms, SEM and TEM images; and UV-vis DRS and photoluminescence spectra. Characterizations showed that S-pg-C3N4 possessed porous rod structure with a larger surface area (20-52 m2/g) than that of bulk g-C3N4, and the surface area of the S-pg-C3N4 samples increased with the increase of heating temperature. Meanwhile, the trace sulfur remained in the framework of g-C3N4 formed sulfur doped g-C3N4, and the visible light absorption edge of the S-pg-C3N4 was extended, corresponding to a narrowed band gap. As a result, the S-pg-C3N4 samples exhibited an enhanced physical adsorption and photocatalytic activity in the degradation of Rhodamine B dye under visible light.

  5. Facile fabrication of novel porous graphitic carbon nitride/copper sulfide nanocomposites with enhanced visible light driven photocatalytic performance.

    Science.gov (United States)

    Chen, Xi; Li, Huankun; Wu, Yuxin; Wu, Hanshuo; Wu, Laidi; Tan, Pengfei; Pan, Jun; Xiong, Xiang

    2016-08-15

    In this work, a novel organic-inorganic heterostructured photocatalyst: porous graphitic carbon nitride (g-C3N4) hybrid with copper sulfide (CuS) had been synthesized via a precipitation-deposition method at low temperature for the first time. UV-vis spectroscopy revealed the porous g-C3N4/CuS nanocomposites showed a strong and broad visible light absorption. Furthermore, the g-C3N4/CuS nanocomposites showed higher photocatalytic activity in the photodegradation of various organic dyes than that of pure g-C3N4 and CuS, and the selected sample of g-C3N4/CuS-2 exhibited the best photocatalytic activity under visible light. The good photocatalytic activity could be ascribed to the matching of the g-C3N4 and CuS band gap energies. Besides, photoluminescent spectra and photoelectrochemical measurements also proved that the CuS/g-C3N4 could greatly enhance the charge generation and suppress the charge recombination of photogenerated carriers. According to the experimental result, a possible photocatalytic mechanism has been proposed. Due to the high stability, the porous g-C3N4/CuS could be applied in the field of environmental remediation. Our work highlights that coupling semiconductors with well-matched band energies provides a facile way to improve the photocatalytic activity.

  6. Carbon Nanotube/Boron Nitride Nanocomposite as a Significant Bifunctional Electrocatalyst for Oxygen Reduction and Oxygen Evolution Reactions.

    Science.gov (United States)

    Patil, Indrajit M; Lokanathan, Moorthi; Ganesan, Balakrishnan; Swami, Anita; Kakade, Bhalchandra

    2017-01-12

    It is an immense challenge to develop bifunctional electrocatalysts for oxygen reduction reactions (ORR) and oxygen evolution reactions (OER) in low temperature fuel cells and rechargeable metal-air batteries. Herein, a simple and cost-effective approach is developed to prepare novel materials based on carbon nanotubes (CNTs) and a hexagonal boron nitride (h-BN) nanocomposite (CNT/BN) through a one-step hydrothermal method. The structural analysis and morphology study confirms the formation of a homogeneous composite and merging of few exfoliated graphene layers of CNTs on the graphitic planes of h-BN, respectively. Moreover, the electrochemical study implies that CNT/BN nanocomposite shows a significantly higher ORR activity with a single step 4-electron transfer pathway and an improved onset potential of +0.86 V versus RHE and a current density of 5.78 mA cm(-2) in alkaline conditions. Interestingly, it exhibits appreciably better catalytic activity towards OER at low overpotential (η=0.38 V) under similar conditions. Moreover, this bifunctional catalyst shows substantially higher stability than a commercial Pt/C catalyst even after 5000 cycles. Additionally, this composite catalyst does not show any methanol oxidation reactions that nullify the issues due to fuel cross-over effects in direct methanol fuel cell applications.

  7. Large-scale production of graphitic carbon nitride with outstanding nitrogen photofixation ability via a convenient microwave treatment

    Science.gov (United States)

    Ma, Huiqiang; Shi, Zhenyu; Li, Shuang; Liu, Na

    2016-08-01

    A convenient microwave treatment for synthesizing graphitic carbon nitride (g-C3N4) with outstanding nitrogen photofixation ability under visible light is reported. X-ray diffraction (XRD), N2 adsorption, UV-vis spectroscopy, SEM, N2-TPD, EPR, photoluminescence (PL) and photocurrent measurements were used to characterize the prepared catalysts. The results indicate that microwave treatment can form many irregular pores in as-prepared g-C3N4, which causes the increased surface area and separation rate of electrons and holes. More importantly, microwave treatment causes the formation of many nitrogen vacancies in as-prepared g-C3N4. These nitrogen vacancies not only serve as active sites to adsorb and activate N2 molecules but also promote interfacial charge transfer from catalysts to N2 molecules, thus significantly improving the nitrogen photofixation ability. Moreover, the present process is a convenient method for large-scale production of g-C3N4 which is significantly important for the practical application.

  8. Mesoporous carbon nitride based biosensor for highly sensitive and selective analysis of phenol and catechol in compost bioremediation.

    Science.gov (United States)

    Zhou, Yaoyu; Tang, Lin; Zeng, Guangming; Chen, Jun; Cai, Ye; Zhang, Yi; Yang, Guide; Liu, Yuanyuan; Zhang, Chen; Tang, Wangwang

    2014-11-15

    Herein, we reported here a promising biosensor by taking advantage of the unique ordered mesoporous carbon nitride material (MCN) to convert the recognition information into a detectable signal with enzyme firstly, which could realize the sensitive, especially, selective detection of catechol and phenol in compost bioremediation samples. The mechanism including the MCN based on electrochemical, biosensor assembly, enzyme immobilization, and enzyme kinetics (elucidating the lower detection limit, different linear range and sensitivity) was discussed in detail. Under optimal conditions, GCE/MCN/Tyr biosensor was evaluated by chronoamperometry measurements and the reduction current of phenol and catechol was proportional to their concentration in the range of 5.00 × 10(-8)-9.50 × 10(-6)M and 5.00 × 10(-8)-1.25 × 10(-5)M with a correlation coefficient of 0.9991 and 0.9881, respectively. The detection limits of catechol and phenol were 10.24 nM and 15.00 nM (S/N=3), respectively. Besides, the data obtained from interference experiments indicated that the biosensor had good specificity. All the results showed that this material is suitable for load enzyme and applied to the biosensor due to the proposed biosensor exhibited improved analytical performances in terms of the detection limit and specificity, provided a powerful tool for rapid, sensitive, especially, selective monitoring of catechol and phenol simultaneously. Moreover, the obtained results may open the way to other MCN-enzyme applications in the environmental field.

  9. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Qi-lin Xiong

    2015-10-01

    Full Text Available The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs, single-walled carbon nanotubes (SWCNTs, and their hybrid structures (SWBN-CNTs are investigated using molecular dynamics (MD simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs, including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X and the angles of bonds.

  10. Facile and Scale Up Synthesis of Red Phosphorus-Graphitic Carbon Nitride Heterostructures for Energy and Environment Applications

    Science.gov (United States)

    Ansari, Sajid Ali; Ansari, Mohammad Omaish; Cho, Moo Hwan

    2016-06-01

    The development of heterostructured materials for efficient solar energy conversion and energy storage devices are essential for practical applications. In this study, a simple and relatively inexpensive method was used to improve the visible light-driven photocatalytic activity and electrochemical supercapacitor behavior of the graphitic carbon nitride (g-C3N4) by elemental red phosphorus (RPh). The as-prepared RPh-g-C3N4 was characterized in detail using a range of spectroscopic techniques to understand the structure, morphology, chemical interaction, and chemical state of the materials. The visible light-driven photocatalytic activity and supercapacitive electrode performance were assessed by the photodegradation of model colored, non-colored organic pollutants, and electrochemical half-cell measurements, respectively. The RPh-g-C3N4 heterostructure with 30 weight percent of RPh exhibited remarkably high photocatalytic activity for the degradation of pollutants compared to the bare constituent materials, which was further confirmed by the photoelectrochemical study under similar visible photoirradiation conditions. The RPh-g-C3N4 heterostructure supercapacitor electrode displayed a high capacitance of 465 F/g and excellent cyclic stability with capacitance retention of 90% after 1000 cycles at a current of 10 A/g. The superior performance was attributed mainly to the narrow band gap, high surface area, capacitive nature of RPh, and nitrogen-rich skeleton of g-C3N4.

  11. The irradiation studies on diamond-like carbon films

    CERN Document Server

    LiuGuIang; Xie Er Qin

    2002-01-01

    Diamond-like carbon (DLC) films have been deposited on glass substrates using radio-frequency (r.f.) plasma deposition method. gamma-ray, ultraviolet (UV) ray and neutron beam were used to irradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were used to characterize the changing characteristics of SP sup 3 C-H bond and hydrogen content in the films due to the irradiations. It showed that, the damage degrees of the gamma-ray, UV ray and neutron beam on the SP sup 3 C-H bonds are different. Among them, the damage of gamma-ray on the SP sup 3 C-H bond is the weakest. When the irradiation dose of gamma-ray reaches 10x10 sup 4 Gy, the SP sup 3 C-H bond reduces about 50% in number. The square resistance of the films is reduced due to the irradiation of UV ray and this is caused by severe oxidation of the films. Compared with that of the as-deposited one, the IR transmittance of the films irradiated by both gamma-ray and neutron beam is increased to some extent. By using the results on optical...

  12. Formation of conducting nanochannels in diamond-like carbon films

    Science.gov (United States)

    Evtukh, A.; Litovchenko, V.; Semenenko, M.; Yilmazoglu, O.; Mutamba, K.; Hartnagel, H. L.; Pavlidis, D.

    2006-09-01

    A sharp increase of the emission current at high electric fields and a decrease of the threshold voltage after pre-breakdown conditioning of diamond-like carbon (DLC) films have been measured. This effect was observed for DLC-coated silicon tips and GaAs wedges. During electron field emission (EFE) at high electric fields the energy barriers caused by an sp3 phase between sp2 inclusions can be broken, resulting in the formation of conducting nanochannels between the semiconductor-DLC interface and the surface of the DLC film. At high current densities and the resulting local heating, the diamond-like sp3 phase transforms into a conducting graphite-like sp2 phase. As a result an electrical conducting nanostructured channel is formed in the DLC film. The diameter of the conducting nanochannel was estimated from the reduced threshold voltage after pre-breakdown conditioning to be in the range of 5-25 nm. The presence of this nanochannel in an insulating matrix leads to a local enhancement of the electric field and a reduced threshold voltage for EFE. Based on the observed features an efficient method of conducting nanochannel matrix formation in flat DLC films for improved EFE efficiency is proposed. It mainly uses a silicon tip array as an upper electrode in contact with the DLC film. The formation of nanochannels starts at the interface between the tips and the DLC film. This opens new possibilities of aligned and high-density conducting channel formation.

  13. Ultrathin diamond-like carbon films deposited by filtered carbon vacuum arcs

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre; Fong, Walton; Kulkarni, Ashok; Ryan, Francis W.; Bhatia, C. Singh

    2001-07-13

    Ultrathin (< 5 nm) hard carbon films are of great interest to the magnetic storage industry as the areal density approaches 100 Gbit/in{sup 2}. These films are used as overcoats to protect the magnetic layers on disk media and the active elements of the read-write slider. Tetrahedral amorphous carbon films can be produced by filtered cathodic arc deposition, but the films will only be accepted by the storage industry only if the ''macroparticle'' issue has been solved. Better plasma filters have been developed over recent years. Emphasis is put on the promising twist filter system - a compact, open structure that operates with pulsed arcs and high magnetic field. Based on corrosion tests it is shown that the macroparticle reduction by the twist filter is satisfactory for this demanding application, while plasma throughput is very high. Ultrathin hard carbon films have been synthesized using S-filter and twist filter systems. Film properties such as hardness, elastic modulus, wear, and corrosion resistance have been tested.

  14. Epitaxial transformation of hcp–fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yu; Feng, Xiaoyi [Department of Metallurgy, Tohoku University, Aramaki-Aza-Aoba 02, Sendai 980-8579 (Japan); Kasukabe, Yoshitaka, E-mail: kasukabe@insc.tohoku.ac.jp [Department of Metallurgy, Tohoku University, Aramaki-Aza-Aoba 02, Sendai 980-8579 (Japan); Center for International Exchange, Tohoku University, 41 Kawauchi, Sendai 980-8576 (Japan); Yamamoto, Shunya; Yoshikawa, Masahito [Quantum Beam Science Directorate, JAEA, 1233 Watanuki, Takasaki 370-1292 (Japan); Fujino, Yutaka [Center for International Exchange, Tohoku University, 41 Kawauchi, Sendai 980-8576 (Japan)

    2013-11-15

    Highlights: ► Atomistic transformation processes of Ti films due to N-implantation have been clarified. ► The N{sub 2}{sup +} ions with 62 keV are implanted into as-deposited Ti film in the in-situ TEM. ► The hcp-fcc transformation is induced by the shear in the <0 1 · 0> direction on the (<0 0 · 1>) plane. ► The shear is promoted by the forming of covalent bonds and by the weakening of Ti–Ti bonds. -- Abstract: Atomistic transformation processes of Ti films due to N-implantation have been clarified through in-situ observations by using transmission electron microscope (TEM) along with molecular orbital calculations. The N{sub 2}{sup +} ions with 62 keV are implanted into as-deposited Ti films which consist of hcp-Ti and TiH{sub x} with preferred orientations, in the 400 kV analytic high resolution TEM combined with ion accelerators. Thus, titanium nitride (TiN{sub y}) films with preferred orientations are epitaxially formed by the inheritance of partial atomic arrangement of hcp-Ti or TiH{sub x} in as-deposited Ti films and by the occupation of octahedral sites by N atoms, which elucidates that epitaxial transformation of hcp–fcc Ti sublattices occurs. The analysis of electronic structure of Ti films during the implantation clarifies that octahedral sites of hcp-Ti with larger space have lower electron density, which leads to the invasion of N ions into octahedral sites. Thus, the hcp–fcc transformation is induced by the shear in the <0 1 · 0> direction on the (0 0 · 1) plane, promoted by the forming of covalent bonds mainly composed of hybridized orbitals due to combination of Ti3d and N2p orbitals, and by the weakening of Ti–Ti bonds.

  15. Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

    Energy Technology Data Exchange (ETDEWEB)

    Yeo, Reuben J.; Dwivedi, Neeraj; Bhatia, Charanjit S., E-mail: elebcs@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore 117583 (Singapore); Zhang, Lu [Institute of Microelectronics (IME), A*STAR (Agency for Science, Technology, and Research), 11 Science Park Road, Singapore Science Park II, Singapore, Singapore 117685 (Singapore); Zhang, Zheng; Tripathy, S. [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore, Singapore 117602 (Singapore); Lim, Christina Y. H. [Department of Mechanical Engineering, National University of Singapore, Singapore, Singapore 117575 (Singapore)

    2015-01-28

    Pole tip recession (PTR) is one of the major issues faced in magnetic tape storage technology, which causes an increase in the magnetic spacing and hence signal loss during data readback. Despite efforts to reduce the magnetic spacing, PTR, and surface wear on the heads by using protective overcoats, most of them either employ complex fabrication processes and approaches do not provide adequate protection to the head or are too thick (∼10–20 nm), especially for future high density tape storage. In this work, we discuss an approach to reduce the PTR and surface wear at the head by developing an ultrathin ∼7 nm bilayer overcoat of silicon/silicon nitride (Si/SiN{sub x}) and carbon (C), which is totally fabricated by a cost-effective and industrial-friendly magnetron sputtering process. When compared with a monolithic C overcoat of similar thickness, the electrically insulating Si/SiN{sub x}/C bilayer overcoat was found to provide better wear protection for commercial tape heads, as demonstrated by Auger electron spectroscopic analyses after wear tests with commercial tape media. Although the microstructures of carbon in the monolithic and bilayer overcoats were similar, the improved wear durability of the bilayer overcoat was attributed to the creation of extensive interfacial bonding of Si and N with the C overcoat and the alumina-titanium carbide composite head substrate, as predicted by time-of-flight secondary ion mass spectrometry and confirmed by in-depth X-ray photoelectron spectroscopy analyses. This study highlights the pivotal role of enhanced interfaces and interfacial bonding in developing ultrathin yet wear-durable overcoats for tape heads.

  16. Ultra-small vanadium nitride quantum dots embedded in porous carbon as high performance electrode materials for capacitive energy storage

    Science.gov (United States)

    Yang, Yunlong; Zhao, Lei; Shen, Kuiwen; Liu, Ying; Zhao, Xiaoning; Wu, Yage; Wang, Yanqin; Ran, Fen

    2016-11-01

    Ultra-small vanadium nitride quantum dots embedded in porous carbon (VNQDs/PC) were fabricated by a thermal treatment process of NH4VO3/C3H6N6 under nitrogen atmosphere. The specific capacitance of VNQDs/PC was 1008 mF cm-2 at a current density of 0.004 A cm-2, whereas the VN/carbon hybrid material obtained by a solid-state blending of NH4VO3 and C3H6N6 just exhibited a capacitance of 432 mF cm-2 at the same current density. By mediating the ratio of NH4VO3 and C3H6N6, a maximum specific capacitance of 1124 mF cm-2 was achieved at a current density of 0.002 A cm-2 in aqueous 6 mol/L KOH electrolyte with the potential range from 0 to -1.15 V when it reached 1: 7 (wt./wt.). Additionally, symmetrical supercapacitor fabricated with synthesized VNQDs/PC presented a high specific capacitance of 215 mF cm-2 at 0.002 A cm-2 based on the entire cell, and exhibited a high capacitance retention of 86.6% with current density increased to 5 A g-1. The VNQDs/PC negative electrodes were combined with Ni(OH)2 positive electrodes for the fabrication of hybrid supercapacitors. Remarkably, at a power density of 828.7 W kg-1, the device delivered an ultrahigh energy density of 47.2 Wh kg-1.

  17. Construction of carbon quantum dots/proton-functionalized graphitic carbon nitride nanocomposite via electrostatic self-assembly strategy and its application

    Science.gov (United States)

    Jian, Xuan; Liu, Xian; Yang, Hui-min; Li, Jia-gang; Song, Xiu-li; Dai, Hong-yan; Liang, Zhen-hai

    2016-05-01

    Carbon quantum dots (CQDs) and graphitic carbon nitride (g-C3N4), as advanced metal-free material catalysts have been the focus of considerable attention because of their superior photocatalytic activities. In this study, we developed a novel approach to obtain CQDs/g-C3N4 nanocomposite with effective interfacial contact by incorporating negatively charged CQDs and tailor-made proton-functionalized g-C3N4via the electrostatic self-assembly strategy. Then, the morphology and microstructure of the new nanocomposite were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible diffuse reflectance spectroscopy (DRS) and X-ray photoelectron spectroscopy (XPS). The CQDs and proton-functionalized g-C3N4 nanocomposite exhibited excellent electron transfer properties though electrochemical impedance spectroscopy (EIS), significantly enhanced photoactivity in the photoelectrochemical i-t curve test and degradation of methylene blue solution under visible light irradiation. These results demonstrated that the electrostatic self-assembly strategy process is a promising method of fabricating uniform metal-free material catalysts for an extensive range of applications.

  18. Carbon Nanotube Film-Based Speaker Developed in Tsinghua University

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ A research group from Tsinghua University led by Prof.Fan Shoushan,Member of the Chinese Academy of Sciences,and Jiang Kaili,associate professor of Physics,found that carbon nanotube thin film could act as a speaker once fed by audio frequency electric currents.These carbon nanotube loudspeakers are only tens of a nanometer thick,transparent,flexible and stretchable,which can be further tailored into any shape and size.These results have been published in the journal Nano Letter.

  19. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Science.gov (United States)

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  20. Optical Properties of Pyrolytic Carbon Films Versus Graphite and Graphene.

    Science.gov (United States)

    Dovbeshko, Galyna I; Romanyuk, Volodymyr R; Pidgirnyi, Denys V; Cherepanov, Vsevolod V; Andreev, Eugene O; Levin, Vadim M; Kuzhir, Polina P; Kaplas, Tommi; Svirko, Yuri P

    2015-12-01

    We report a comparative study of optical properties of 5-20 nm thick pyrolytic carbon (PyC) films, graphite, and graphene. The complex dielectric permittivity of PyC is obtained by measuring polarization-sensitive reflectance and transmittance spectra of the PyC films deposited on silica substrate. The Lorentz-Drude model describes well the general features of the optical properties of PyC from 360 to 1100 nm. By comparing the obtained results with literature data for graphene and highly ordered pyrolytic graphite, we found that in the visible spectral range, the effective dielectric permittivity of the ultrathin PyC films are comparable with those of graphite and graphene.

  1. Tribology of carbide derived carbon films synthesized on tungsten carbide

    Science.gov (United States)

    Tlustochowicz, Marcin

    Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

  2. Surface reactions of molecular and atomic oxygen with carbon phosphide films.

    Science.gov (United States)

    Gorham, Justin; Torres, Jessica; Wolfe, Glenn; d'Agostino, Alfred; Fairbrother, D Howard

    2005-11-01

    The surface reactions of atomic and molecular oxygen with carbon phosphide films have been studied using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Carbon phosphide films were produced by ion implantation of trimethylphosphine into polyethylene. Atmospheric oxidation of carbon phosphide films was dominated by phosphorus oxidation and generated a carbon-containing phosphate surface film. This oxidized surface layer acted as an effective diffusion barrier, limiting the depth of phosphorus oxidation within the carbon phosphide film to phosphorus atoms as well as the degree of phosphorus oxidation. For more prolonged AO exposures, a highly oxidized phosphate surface layer formed that appeared to be inert toward further AO-mediated erosion. By utilizing phosphorus-containing hydrocarbon thin films, the phosphorus oxides produced during exposure to AO were found to desorb at temperatures >500 K under vacuum conditions. Results from this study suggest that carbon phosphide films can be used as AO-resistant surface coatings on polymers.

  3. Synthesis and Characterization of Magnetite/Carbon Nanocomposite Thin Films for Electrochemical Applications

    Institute of Scientific and Technical Information of China (English)

    Suh Cem Pang; Wai Hwa Khoh; Suk Fun Chin

    2011-01-01

    Stable colloidal suspension of magnetite/starch nanocomposite was prepared by a facile and aqueous-based chemical precipitation method, Magnetite/carbon nanocomposite thin films were subsequently formed upon carbonization of the starch component by heat treatment under controlled conditions. The initial content of native sago starch as the carbon source was found to affect the microstructure and electrochemical properties of the resulted magnetite/carbon nanocomposite thin films, A specific capacitance of 124 F/g was achieved for the magnetite/carbon nanocomposite thin films as compared to that of 82 F/g for pure magnetite thin films in Na2SO4 aqueous electrolyte.

  4. Research on Silicon Nitride Films Deposited by PECVD Technology%PECVD法氮化硅薄膜制备工艺的研究

    Institute of Scientific and Technical Information of China (English)

    汪文君; 孙建洁; 朱赛宁; 张世权

    2013-01-01

    Silicon nitride thin films were deposited successfully on Si substrates by plasma-enhanced chemical vapor deposition(PECVD). The thickness and refractive index of the thin iflms were tested by ellipsometer and proiflometry, respectively. The inlfuences of silane-ammonia lfow ratio(SAR)and spacing on the performance of silicon nitride thin iflms were studied. Results showed that the thickness and refractive index of thin iflms increased with SAR, and the etching rate in HF decreased rapidly after annealing.%采用等离子体增强化学气相沉积法(PECVD)在单晶硅衬底上制备了氮化硅薄膜,分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响,发现当硅烷氨气流量比增加时,薄膜厚度和折射率均随之增加,并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。

  5. Bicontinuous Porous Carbon Films Templated with ABC Triblock Copolymers

    Science.gov (United States)

    Cavicchi, Kevin; Deng, Guodong; Vogt, Bryan

    2014-03-01

    Mesoporous carbons are useful for a range of applications such as separation and catalysis. A route to prepare porous materials is through cooperative self-assembly of a carbon precursor (e.g. phenolic resin) and a block copolymer, in which the precursor is selectively soluble, to drive mesophase formation. Typical soft templating uses AB or ABA block copolymers, which form classical morphologies, such as spheres, cylinders, and lamellae. Switching to an ABC type block copolymer provides greater flexibility in the design of the morphology potentially opening up larger processing windows for complex structures, such as bicontinuous morphologies. This presentation will discuss efforts to prepare bicontinuous porous carbon thin films using an ABC triblock copolymer of poly(ethylene oxide)-block-poly(ethyl acrylate)-block-polystyrene via spin-coating and a series of thermal annealing steps. It will be shown that direct thermal annealing can produce high porosity (~60%) carbon fiber networks. In addition, adding a solvent annealing step prior to the thermal annealing steps is able to produce longer range order structures with a small window of an ordered bicontinuous morphology. These high porosity films with organized fibers are promising for energy and separation applications.

  6. Flexible Carbon Nanotube Films for High Performance Strain Sensors

    Directory of Open Access Journals (Sweden)

    Olfa Kanoun

    2014-06-01

    Full Text Available Compared with traditional conductive fillers, carbon nanotubes (CNTs have unique advantages, i.e., excellent mechanical properties, high electrical conductivity and thermal stability. Nanocomposites as piezoresistive films provide an interesting approach for the realization of large area strain sensors with high sensitivity and low manufacturing costs. A polymer-based nanocomposite with carbon nanomaterials as conductive filler can be deposited on a flexible substrate of choice and this leads to mechanically flexible layers. Such sensors allow the strain measurement for both integral measurement on a certain surface and local measurement at a certain position depending on the sensor geometry. Strain sensors based on carbon nanostructures can overcome several limitations of conventional strain sensors, e.g., sensitivity, adjustable measurement range and integral measurement on big surfaces. The novel technology allows realizing strain sensors which can be easily integrated even as buried layers in material systems. In this review paper, we discuss the dependence of strain sensitivity on different experimental parameters such as composition of the carbon nanomaterial/polymer layer, type of polymer, fabrication process and processing parameters. The insights about the relationship between film parameters and electromechanical properties can be used to improve the design and fabrication of CNT strain sensors.

  7. Nanocomposite fibers and film containing polyolefin and surface-modified carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Chu,Benjamin (Setauket, NY); Hsiao, Benjamin S. (Setauket, NY)

    2010-01-26

    Methods for modifying carbon nanotubes with organic compounds are disclosed. The modified carbon nanotubes have enhanced compatibility with polyolefins. Nanocomposites of the organo-modified carbon nanotubes and polyolefins can be used to produce both fibers and films having enhanced mechanical and electrical properties, especially the elongation-to-break ratio and the toughness of the fibers and/or films.

  8. Density functional theory study on the full ALD process of silicon nitride thin film deposition via BDEAS or BTBAS and NH3.

    Science.gov (United States)

    Huang, Liang; Han, Bo; Han, Bing; Derecskei-Kovacs, Agnes; Xiao, Manchao; Lei, Xinjian; O'Neill, Mark L; Pearlstein, Ronald M; Chandra, Haripin; Cheng, Hansong

    2014-09-14

    A detailed reaction mechanism has been proposed for the full ALD cycle of Si3N4 deposition on the β-Si3N4(0001) surface using bis(diethylamino)silane (BDEAS) or bis(tertiarybutylamino)silane (BTBAS) as a Si precursor with NH3 acting as the nitrogen source. Potential energy landscapes were derived for all elementary steps in the proposed reaction network using a periodic slab surface model in the density functional approximation. Although the dissociative reactivity of BTBAS was slightly better than that of BDEAS, the thermal deposition process was still found to be an inherently high temperature process due to the high activation energies during the dissociative chemisorption of both precursors and the surface re-amination steps. These results underline the need to develop new precursors and alternative nitrogen sources when low temperature thermal silicon nitride films are targeted.

  9. Peculiarities of the initial stages of carbonization processes in polyimide-based nanocomposite films containing carbon nanoparticles

    Directory of Open Access Journals (Sweden)

    I.V. Gofman

    2015-12-01

    Full Text Available Carbonization of the polyimide-based composite films containing carbon nanoparticles, namely nanofibers and nanocones/disks, in the temperature range 500–550°C was studied and the kinetics of the initial stage of carbonization and the effect of the filler on the mechanical properties of the carbonized films were evaluated. Two polyimides (PIs characterized by different macrochains’ rigidity and different degrees of ordering of the intermolecular structure were used. The character of the nanofiller’s action on the kinetics of the carbonization process depends on the heating rate. In this work, the intensity of the destruction of the PI matrix of the composite films was shown to be slightly higher than that of films of the same polymers with no filler. The introduction of the carbon nanoparticles into both PIs provokes the increase in the ultimate deformation values of the partially carbonized films, while the carbonization of the unfilled PI films yields the brittle materials. The Young’s modulus values of the materials based on the rigid-rod PI do not increase after carbonization, while those for compositions based on the PI with semi-rigid chains increase substantially. Carbon nanocones/disks are characterized by the best compatibility with matrix PIs in comparison with carbon nanofibers.

  10. Impact of film thickness on the morphology of mesoporous carbon films using organic-organic self-assembly.

    Science.gov (United States)

    Vogt, Bryan D; Chavez, Vicki L; Dai, Mingzhi; Arreola, M Regina Croda; Song, Lingyan; Feng, Dan; Zhao, Dongyuan; Perera, Ginusha M; Stein, Gila E

    2011-05-03

    Mesoporous polymer and carbon thin films are prepared by the organic-organic self-assembly of an oligomeric phenolic resin with an amphiphilic triblock copolymer template, Pluronic F127. The ratio of resin to template is selected such that a body-centered cubic (Im3m) mesostructure is formed in the bulk. However, well-ordered mesoporous films are not always obtained for thin films (body-centered cubic symmetry with a preferential orientation of the closest-packed (110) plane parallel to the substrate. Film thickness and initial composition of the carbonizable precursors in the template are critical factors in determining the morphology of mesoporous carbon films. These results provide insight into why difficulties have been reported in producing ultrathin ordered mesoporous carbon films using cooperative organic-organic self-assembly.

  11. Covalently coupled hybrid of graphitic carbon nitride with reduced graphene oxide as a superior performance lithium-ion battery anode.

    Science.gov (United States)

    Fu, Yongsheng; Zhu, Junwu; Hu, Chong; Wu, Xiaodong; Wang, Xin

    2014-11-01

    An in situ chemical synthetic approach has been designed for the fabrication of a covalently coupled hybrid consisting of graphitic carbon nitride (g-C3N4) with reduced graphene oxide (rGO) with differing g-C3N4/rGO ratio. The epoxy groups of graphene oxide (GO) undergo a nucleophilic substitution reaction with dicyandiamide (C2H4N4) to form the C2H4N4-GO composite via a covalent C-N bond, and then both the in situ polymerization of C2H4N4 and the thermal reduction of GO can be achieved at higher temperatures, forming the covalently coupled g-C3N4-rGO. FT-IR, CP-MAS NMR and XPS analyses, clearly revealed a covalent interaction between the g-C3N4 and rGO sheets. The g-C3N4-rGO exhibits an unprecedented high, stable and reversible capacity of 1525 mA h g(-1) at a current density of 100 mA g(-1) after 50 cycles. Even at a large current density of 1000 mA g(-1), a reversible capacity of 943 mA h g(-1) can still be retained. The superior electrochemical performance of g-C3N4-rGO is attributed to the specific characteristics of the unique nanostructure of g-C3N4-rGO and the concerted effects of g-C3N4 and rGO, including covalent interactions between the two moieties, the good conductivity and high special surface area of the nanocomposite, as well as the template effect of the planar amino group of g-C3N4 for the dispersed decoration of Li(+) ions.

  12. Photochemical Modification of Single Crystalline GaN Film Using n-Alkene with Different Carbon Chain Lengths as Biolinker.

    Science.gov (United States)

    Wang, Chun; Zhuang, Hao; Huang, Nan; Heuser, Steffen; Schlemper, Christoph; Zhai, Zhaofeng; Liu, Baodan; Staedler, Thorsten; Jiang, Xin

    2016-06-14

    As a potential material for biosensing applications, gallium nitride (GaN) films have attracted remarkable attention. In order to construct GaN biosensors, a corresponding immobilization of biolinkers is of great importance in order to render a surface bioactive. In this work, two kinds of n-alkenes with different carbon chain lengths, namely allylamine protected with trifluoroacetamide (TFAAA) and 10-aminodec-1-ene protected with trifluoroacetamide (TFAAD), were used to photochemically functionalize single crystalline GaN films. The successful linkage of both TFAAA and TFAAD to the GaN films is confirmed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurement. With increased UV illumination time, the intensity of the secondary ions corresponding to the linker molecules initially increases and subsequently decreases in both cases. Based on the SIMS measurements, the maximum coverage of TFAAA is achieved after 14 h of UV illumination, while only 2 h is required in the case of TFAAD to reach the situation of a fully covered GaN surface. This finding leads to the conclusion that the reaction rate of TFAAD is significantly higher compared to TFAAA. Measurements by atomic force microscopy (AFM) indicate that the coverage of GaN films by a TFAAA layer leads to an increased surface roughness. The atomic terraces, which are clearly observable for the pristine GaN films, disappear once the surface is fully covered by a TFAAA layer. Such TFAAA layers will feature a homogeneous surface topography even for reaction times of 24 h. In contrast to this, TFAAD shows strong cross-polymerization on the surface, this is confirmed by optical microscopy. These results demonstrate that TFAAA is a more suitable candidate as biolinker in context of the GaN surfaces due to its improved controllability.

  13. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  14. Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

    Science.gov (United States)

    Popescu, C.; Dorcioman, G.; Bita, B.; Besleaga, C.; Zgura, I.; Himcinschi, C.; Popescu, A. C.

    2016-12-01

    Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

  15. Preferred orientation in carbon and boron nitride: Does a thermodynamic theory of elastic strain energy get it right. [C; BN

    Energy Technology Data Exchange (ETDEWEB)

    McCarty, K.F. (Sandia National Laboratories, Livermore, California 94550 (United States))

    1999-09-01

    We address whether the elastic strain-energy theory (minimizing the Gibbs energy of a stressed crystal) of McKenzie and co-workers [D. R. McKenzie and M. M. M. Bilek, J. Vac. Sci. Technol. A [bold 16], 2733 (1998)] adequately explains the preferred orientation observed in carbon and BN films. In the formalism, the Gibbs energy of the cubic materials diamond and cubic boron includes the strain that occurs when the phases form, through specific structural transformations, from graphitic precursors. This treatment violates the requirement of thermodynamics that the Gibbs energy be a path-independent, state function. If the cubic phases are treated using the same (path-independent) formalism applied to the graphitic materials, the crystallographic orientation of lowest Gibbs energy is not that observed experimentally. For graphitic (hexagonal) carbon and BN, an elastic strain approach seems inappropriate because the compressive stresses in energetically deposited films are orders of magnitude higher than the elastic limit of the materials. Furthermore, using the known elastic constants of either ordered or disordered graphitic materials, the theory does not predict the orientation observed by experiment. [copyright] [ital 1999 American Vacuum Society.

  16. Tribological properties of boron nitride synthesized by ion beam deposition

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  17. A dense and strong bonding collagen film for carbon/carbon composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Sheng; Li, Hejun, E-mail: lihejun@nwpu.edu.cn; Li, Kezhi; Lu, Jinhua; Zhang, Leilei

    2015-08-30

    Graphical abstract: - Highlights: • Significantly enhancement of biocompatibility on C/C composites by preparing a collagen film. • The dense and continuous collagen film had a strong bonding strength with C/C composites after dehydrathermal treatment (DHT) crosslink. • Numerous oxygen-containing functional groups formed on the surface of C/C composites without matrix damage. - Abstract: A strong bonding collagen film was successfully prepared on carbon/carbon (C/C) composites. The surface conditions of the modified C/C composites were detected by contact angle measurements, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The roughness, optical morphology, bonding strength and biocompatibility of collagen films at different pH values were detected by confocal laser scanning microscope (CLSM), universal test machine and cytology tests in vitro. After a 4-h modification in 30% H{sub 2}O{sub 2} solution at 100 °C, the contact angle on the surface of C/C composites was decreased from 92.3° to 65.3°. Large quantities of hydroxyl, carboxyl and carbonyl functional groups were formed on the surface of the modified C/C composites. Then a dense and continuous collagen film was prepared on the modified C/C substrate. Bonding strength between collagen film and C/C substrate was reached to 8 MPa level when the pH value of this collagen film was 2.5 after the preparing process. With 2-day dehydrathermal treatment (DHT) crosslinking at 105 °C, the bonding strength was increased to 12 MPa level. At last, the results of in vitro cytological test showed that this collagen film made a great improvement on the biocompatibility on C/C composites.

  18. The production of silicon carbon nitride ceramic fibres from poly-silazane polymers. Herstellung von Siliciumcarbonitrid-Keramikfasern aus Polysilazan-Polymeren

    Energy Technology Data Exchange (ETDEWEB)

    Holzinger, R.

    1994-07-14

    The investigations carried out in this work can be divided into two main points. One, the process technique branch, goes along the polymer precursor route. This includes the melt spinning of the poly-silazane polymers, the stabilisation of the green fibres and finally pyrolysis to silicon-carbon nitride ceramic fibres. Starting from the polymers, all the reactions and structural changes during the individual steps are examined. These experiments represent the second main part of the work. The optimisation criterion is always the tensile strength of the resulting ceramic fibres. (orig.)

  19. Interfacial electronic structure and charge transfer of hybrid graphene quantum dot and graphitic carbon nitride nanocomposites: insights into high efficiency for photocatalytic solar water splitting.

    Science.gov (United States)

    Ma, Zuju; Sa, Rongjian; Li, Qiaohong; Wu, Kechen

    2016-01-14

    New metal-free carbon nanodot/carbon nitride (C3N4) nanocomposites have shown to exhibit high efficiency for photocatalytic solar water splitting. (J. Liu, et al., Science, 2015, 347, 970) However, the mechanism underlying the ultrahigh performance of these nanocomposites and consequently the possibilities for further improvements are not at present clear. In this work, we performed hybrid functional calculations and included long-range dispersion corrections to accurately characterize the interfacial electron coupling of the graphene quantum dot-graphitic carbon nitride composites (Gdot/g-C3N4). The results revealed that the band gap of Gdot/g-C3N4 could be engineered by changing the lateral size of Gdots. In particular, the C24H12/g-C3N4 composites present an ideal band gap of 1.92 eV to harvest a large part of solar light. More interestingly, a type-II heterojunction is formed at the interface of the Gdot/g-C3N4 composites, a desirable feature for enhanced photocatalytic activity. The charge redistribution at the interface leads to strong electron depletion above the Gdot sheet and electron accumulation below the g-C3N4 monolayer, potentially facilitating the separation of H2O oxidation and reduction reactions. Furthermore, we suggested that the photocatalytic performance of the Gdot/g-C3N4 nanocomposites can be further improved by decreasing the thickness of Gdots and tuning the size of Gdots.

  20. Electronic Power System Application of Diamond-Like Carbon Films

    Science.gov (United States)

    Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

    2003-01-01

    A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

  1. Iron nanoparticles embedded in carbon films: structural and optical properties

    Science.gov (United States)

    Mashayekhi, Fatemeh; Shafiekhani, Azizollah; Sebt, Seyed Ali

    2016-06-01

    In the present work amorphous hydrogenated carbon films with sputtered iron nanoparticles (Fe NPs @ a-C:H) were deposited by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition methods using acetylene gas and iron target on quartz and silicon substrates. Samples were prepared in different initial pressures and during constant deposition time. The crystalline structure of Fe NPs @ a-C:H was studied using X-ray diffraction and selected area electron diffraction patterns. The X-ray photoelectron spectroscopy analysis presents that increasing the initial pressure decreases the atomic ratio of Fe/C and the sp3-hybridized carbon content in prepared samples. The transmission electron microscope image shows the encapsulated Fe NPs in carbon films. The optical properties and localized surface plasmon resonance (LSPR) of samples were studied using UV-visible spectrophotometry, which is shown that increasing of Fe content decreases the intensity of LSPR peak and increases the optical band gap.

  2. Nanosized graphene crystallite induced strong magnetism in pure carbon films.

    Science.gov (United States)

    Wang, Chao; Zhang, Xi; Diao, Dongfeng

    2015-03-14

    We report strong magnetism in pure carbon films grown by electron irradiation assisted physical vapor deposition in electron cyclotron resonance plasma. The development of graphene nanocrystallites in the amorphous film matrix, and the dependence of the magnetic behavior on amorphous, nanocrystallite and graphite-like structures were investigated. Results were that the amorphous structure shows weak paramagnetism, graphene nanocrystallites lead to strong magnetization, and graphite-like structures corresponded with a lower magnetization. At a room temperature of 300 K, the highest saturation magnetization of 0.37 emu g(-1) was found in the nanosized graphene nanocrystallite structure. The origin of strong magnetism in nanocrystallites was ascribed to the spin magnetic moment at the graphene layer edges.

  3. Printable thin film supercapacitors using single-walled carbon nanotubes.

    Science.gov (United States)

    Kaempgen, Martti; Chan, Candace K; Ma, J; Cui, Yi; Gruner, George

    2009-05-01

    Thin film supercapacitors were fabricated using printable materials to make flexible devices on plastic. The active electrodes were made from sprayed networks of single-walled carbon nanotubes (SWCNTs) serving as both electrodes and charge collectors. Using a printable aqueous gel electrolyte as well as an organic liquid electrolyte, the performances of the devices show very high energy and power densities (6 W h/kg for both electrolytes and 23 and 70 kW/kg for aqueous gel electrolyte and organic electrolyte, respectively) which is comparable to performance in other SWCNT-based supercapacitor devices fabricated using different methods. The results underline the potential of printable thin film supercapacitors. The simplified architecture and the sole use of printable materials may lead to a new class of entirely printable charge storage devices allowing for full integration with the emerging field of printed electronics.

  4. Printable Thin Film Supercapacitors Using Single-Walled Carbon Nanotubes

    KAUST Repository

    Kaempgen, Martti

    2009-05-13

    Thin film supercapacitors were fabricated using printable materials to make flexible devices on plastic. The active electrodes were made from sprayed networks of single-walled carbon nanotubes (SWCNTs) serving as both electrodes and charge collectors. Using a printable aqueous gel electrolyte as well as an organic liquid electrolyte, the performances of the devices show very high energy and power densities (6 W h/kg for both electrolytes and 23 and 70 kW/kg for aqueous gel electrolyte and organic electrolyte, respectively) which is comparable to performance in other SWCNT-based supercapacitor devices fabricated using different methods. The results underline the potential of printable thin film supercapacitors. The simplified architecture and the sole use of printable materials may lead to a new class of entirely printable charge storage devices allowing for full integration with the emerging field of printed electronics. © 2009 American Chemical Society.

  5. Monolithic carbide-derived carbon films for micro-supercapacitors.

    Science.gov (United States)

    Chmiola, John; Largeot, Celine; Taberna, Pierre-Louis; Simon, Patrice; Gogotsi, Yury

    2010-04-23

    Microbatteries with dimensions of tens to hundreds of micrometers that are produced by common microfabrication techniques are poised to provide integration of power sources onto electronic devices, but they still suffer from poor cycle lifetime, as well as power and temperature range of operation issues that are alleviated with the use of supercapacitors. There have been a few reports on thin-film and other micro-supercapacitors, but they are either too thin to provide sufficient energy or the technology is not scalable. By etching supercapacitor electrodes into conductive titanium carbide substrates, we demonstrate that monolithic carbon films lead to a volumetric capacity exceeding that of micro- and macroscale supercapacitors reported thus far, by a factor of 2. This study also provides the framework for integration of high-performance micro-supercapacitors onto a variety of devices.

  6. Development of electrochemical oxidase biosensors based on carbon nanotube-modified carbon film electrodes for glucose and ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia-Caridade, Carla; Pauliukaite, Rasa; Brett, Christopher M.A. [Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade de Coimbra, 3004-535 Coimbra (Portugal)

    2008-10-01

    Functionalised multi-walled carbon nanotubes (MWCNTs) were cast on glassy carbon (GC) and carbon film electrodes (CFE), and were characterised electrochemically and applied in a glucose-oxidase-based biosensor. MWCNT-modified carbon film electrodes were then used to develop an alcohol oxidase (AlcOx) biosensor, in which AlcOx-BSA was cross-linked with glutaraldehyde and attached by drop-coating. The experimental conditions, applied potential and pH, for ethanol monitoring were optimised, and ethanol was determined amperometrically at -0.3 V vs. SCE at pH 7.5. Electrocatalytic effects of MWCNT were observed with respect to unmodified carbon film electrodes. The sensitivity obtained was 20 times higher at carbon film/MWCNT-based biosensors than without MWCNT. (author)

  7. Synchronized metal-ion irradiation as a way to control growth of transition-metal nitride alloy films during hybrid HIPIMS/DCMS co-sputtering

    Science.gov (United States)

    Greczynski, Grzegorz

    2016-09-01

    High-power pulsed magnetron sputtering (HIPIMS) is particularly attractive for growth of transition metal (TM) nitride alloys for two reasons: (i) the high ionization degree of the sputtered metal flux, and (ii) the time separation of metal- and gas-ion fluxes incident at the substrate. The former implies that ion fluxes originating from elemental targets operated in HIPIMS are distinctly different from those that are obtained during dc magnetron sputtering (DCMS), which helps to separate the effects of HIPIMS and DCMS metal-ion fluxes on film properties. The latter feature allows one to minimize compressive stress due to gas-ion irradiation, by synchronizing the pulsed substrate bias with the metal-rich-plasma portion of the HIPIMS pulse. Here, we use pseudobinary TM nitride model systems TiAlN, TiSiN, TiTaN, and TiAlTaN to carry out experiments in a hybrid configuration with one target powered by HIPIMS, the other operated in DCMS mode. This allows us to probe the roles of intense and metal-ion fluxes (n = 1 , 2) from HIPIMS-powered targets on film growth kinetics, microstructure, and physical properties over a wide range of M1M2N alloy compositions. TiAlN and TiSiN mechanical properties are shown to be determined by the average metal-ion momentum transfer per deposited atom. Irradiation with lighter metal-ions (M1 =Al+ or Si+ during M1-HIPIMS/Ti-DCMS) yields fully-dense single-phase cubic Ti1-x (M1)x N films. In contrast, with higher-mass film constituent ions such as Ti+, easily exceeds the threshold for precipitation of second phase w-AlN or Si3N4. Based on the above results, a new PVD approach is proposed which relies on the hybrid concept to grow dense, hard, and stress-free thin films with no external heating. The primary targets, Ti and/or Al, operate in DCMS mode providing a continuous flux of sputter-ejected metal atoms to sustain a high deposition rate, while a high-mass target metal, Ta, is driven by HIPIMS to serve as a pulsed source of energetic

  8. Study on the oriented recrystallization of carbon-coated polyethylene oriented ultrathin films.

    Science.gov (United States)

    Chang, Haibo; Guo, Qipeng; Shen, Deyan; Li, Lin; Qiu, Zhaobin; Wang, Feng; Yan, Shouke

    2010-10-21

    It is confirmed that a layer of vacuum-evaporated carbon on the surface of a preoriented ultrathin polymer film can lead to an oriented recrystallization of the polymer film. This has been attributed to a strong fixing effect of vacuum-evaporated carbon layer on the film surface of the polymer. To study the origin of the strong fixing effect of vacuum-evaporated carbon layer on the polymer films, the melting and recrystallization behaviors of the preoriented ultrathin PE film with a vacuum-evaporated carbon layer were studied by using atomic force microscopy, electron diffraction, Fourier transform infrared spectroscopy, and Raman spectroscopy. We found that there exists some extent of chain orientation of carbon-coated polyethylene (PE) preoriented ultrathin film above its melting temperature. These oriented PE chain sequences act as nucleation sites and induce the oriented recrystallization of preoriented PE film from melt. Raman spectroscopy results suggest that new carbon-carbon bonds between the carbon layer and the oriented PE film are created during the process of vacuum carbon evaporation. As a result, some of the PE chain stems are fixed to the coated carbon substrate via covalent bond. Such a bonding has retarded the relaxation of the PE chains at the spot and, therefore, preserves the original orientation of the PE stems at high temperature, which in turn derives the recrystallization of the PE chains in an oriented structure.

  9. Effect of gate-dielectrics on the electrical characteristics of solution-processed single-wall-carbon-nanotube thin-film transistors

    Science.gov (United States)

    Ha, Tae-Jun

    2017-02-01

    High performance of solution-processed, single-wall-carbon-nanotube (SWCNT) thin-film transistors (TFTs) is investigated through the use in the different gate-dielectrics of silicon dioxide (SiO2), silicon nitride (SiNx), the bilayers of SiO2 and SiNx, and hexagonal boron-nitride (h-BN) thin films. The different interfacial characteristics affect the electrical characteristics of the SWCNT-TFTs including key device metrics. Significantly, the hysteresis window that is normally observed in drop-casted SWCNT-TFTs was majorly suppressed by the employment of a thin lower dielectric-constant material on a higher dielectricconstant material. Sub-2V operating SWCNT-TFTs with solution-processed h-BN gate dielectrics with good above- and sub-threshold characteristics are also investigated on the basis of interfacial characteristics underlying the device physics. Such performance can be realized by the suppressed interfacial impurity scattering through the chemically clean interface combined with optimized solution-process below 100 °C. [Figure not available: see fulltext.

  10. Transport properties of low-dimensional amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharyya, Somnath [Nano-Electronics Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey (United Kingdom)]. E-mail: s.bhattacharyya@surrey.ac.uk; Silva, S.R.P. [Nano-Electronics Centre, Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey (United Kingdom)

    2005-06-22

    Research on amorphous carbon (a-C) to date has focused on the distinction between the sp{sup 2} and sp{sup 3} phases and understanding the properties on the basis of the sp{sup 2}-C bonded component. Recently, sufficient information on the sp{sup 2}-bonded clusters and nanoforms of carbon has helped to identify the importance of sp{sup 2}-C over sp{sup 3}-C, especially in transport properties and encouraged many groups to exploit this knowledge for device design. However, at present, few studies dedicated purely to understanding the transport properties and electronic structure of the family of a-C films as a whole is available. In this paper, we try to identify the key issues in using a-C as an unconventional semiconducting material and try to elaborate on how to overcome these hurdles in order to utilize this extremely versatile material for active device fabrication.

  11. Study on Blood Compatibility of Carbon-Nitride Film Synthesized by Ion Beam Enhanced Deposition

    Institute of Scientific and Technical Information of China (English)

    1997-01-01

    StudyonBloodCompatibilityofCarbon┐NitrideFilmSynthesizedbyIonBeamEnhancedDeposition*HuangNanYangPingDepartmentofMaterialsEngi...

  12. Carbon nitride films grown by cathodic vacuum arc for hemocompatibility applications

    Directory of Open Access Journals (Sweden)

    Diana Shirley Galeano-Osorio

    2014-01-01

    Full Text Available Se obtuvieron películas delgadas de nitruro de carbono amorfo empleando arco pulsado y variando la temperatura del sustrato a temperatura ambiente, 100, 150 y 200 °C. Los enlaces de las estructuras se investigaron empleando la técnica de espectroscopía infrarroja por transformada de Fourier (FTIR y espectroscopía Raman. Se identificaron bandas de nitrilos en aproximadamente 2200 cm-1. Se observó una reducción en la concentración de los enlaces sp3 y del desorden estructural de las películas. La relación entre las intensidades de las bandas D y G aumentó con la temperatura del sustrato desde temperatura ambiente hasta 100°C; sin embargo, a una temperatura crítica de 150°C, esta tendencia desapareció y las películas se tornaron amorfas. Se observó un pico ubicado en aproximadamente 1610 cm-1 en las películas crecidas a 100°C, 150°C y 200 °C; además, las películas crecidas a 150 °C presentaron la rugosidad más baja y mayores durezas y hemocompatibilidad.

  13. GROWTH, MORPHOLOGICAL, STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF NITROGEN DOPED ZINC OXIDE THIN FILM ON POROUS GALLIUM NITRIDE TEMPLATE

    OpenAIRE

    2016-01-01

    Gallium nitride (GaN) is susceptible of producing efficient display and lighting devices.  Low cost hybrid heterostructured lighting devices are developed by combining zinc oxide (ZnO) with GaN that has gained much more research interest, nowadays.  Porous GaN receives a great deal of attraction by its excellent and improved properties compared with its bulk counterpart.  Several potential applications have been realized, including for serving as a strain-relaxed substrates for...

  14. Study of relationship between structure and transmittance of diamond-like carbon (DLC) films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    In this paper, the transparent hard diamond-like carbon (DLC) films were deposited on glass substrate by magnetic confined radio-frequency plasma chemical vapor deposition. The structure of films was studied by Raman spectra and X-ray photoelectron spectra (XPS), the transmittance of films by Spectrophotometer. The mechanism of the influence of films structure on transmittance of the films was discussed. The results show that the thickness of films was lower than 100nm, and the transmittance was over 90% in 380-780 nm region. Discussion in theory on the influence of film structure on transmittance was correspondence to experiment results.

  15. Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11 MeV C{sub 60}{sup 3+} impacts

    Energy Technology Data Exchange (ETDEWEB)

    Kitayama, T.; Nakajima, K.; Suzuki, M. [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan); Narumi, K.; Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Matsuda, M.; Sataka, M. [Nuclear Science Research Institute, Japan Atomic Energy Agency, Tokai, Naka, Ibaraki 319-1195 (Japan); Tsujimoto, M.; Isoda, S. [Institute for Integrated Cell-Material Sciences, Kyoto University, Kyoto 606-8501 (Japan); Kimura, K., E-mail: kimura@kues.kyoto-u.ac.jp [Department of Micro Engineering, Kyoto University, Kyoto 615-8540 (Japan)

    2015-07-01

    Gold nanoparticles with an average diameter of 3.6 nm were deposited on amorphous silicon nitride (a-SiN) films. These samples were irradiated with 1.11 MeV C{sub 60}{sup 3+} ions to a fluence of ∼5 × 10{sup 10} ions/cm{sup 2} and observed using transmission electron microscopy (TEM). The ion tracks were clearly seen as bright spots and the gold nanoparticles disappeared from a surface area with a diameter of ∼20 nm around each ion track. The disappeared nanoparticles were collected by a foil placed in front of the sample. Gold particles of circular shape with a diameter of several nm were observed on the collector foil using TEM, suggesting that the gold nanoparticles were emitted as liquid droplets from the a-SiN film upon impact of the C{sub 60} ion. In view of the previous molecular dynamics simulations (Anders et al., 2009), this indicates that the surface temperature rises above the melting point of gold in the region with a diameter of ∼20 nm around the ion impact position.

  16. Plasma deposited diamond-like carbon films for large neutralarrays

    Energy Technology Data Exchange (ETDEWEB)

    Brown, I.G.; Blakely, E.A.; Bjornstad, K.A.; Galvin, J.E.; Monteiro, O.R.; Sangyuenyongpipat, S.

    2004-07-15

    To understand how large systems of neurons communicate, we need to develop methods for growing patterned networks of large numbers of neurons. We have found that diamond-like carbon thin films formed by energetic deposition from a filtered vacuum arc carbon plasma can serve as ''neuron friendly'' substrates for the growth of large neural arrays. Lithographic masks can be used to form patterns of diamond-like carbon, and regions of selective neuronal attachment can form patterned neural arrays. In the work described here, we used glass microscope slides as substrates on which diamond-like carbon was deposited. PC-12 rat neurons were then cultured on the treated substrates and cell growth monitored. Neuron growth showed excellent contrast, with prolific growth on the treated surfaces and very low growth on the untreated surfaces. Here we describe the vacuum arc plasma deposition technique employed, and summarize results demonstrating that the approach can be used to form large patterns of neurons.

  17. MoS2-coated microspheres of self-sensitized carbon nitride for efficient photocatalytic hydrogen generation under visible light irradiation

    Science.gov (United States)

    Gu, Quan; Sun, Huaming; Xie, Zunyuan; Gao, Ziwei; Xue, Can

    2017-02-01

    We have successfully coated the self-sensitized carbon nitride (SSCN) microspheres with a layer of MoS2 through a facile one-pot hydrothermal method by using (NH4)2MoS4 as the precursor. The resulted MoS2-coated SSCN photocatalyst appears as a core-shell structure and exhibits enhanced visible-light activities for photocatalytic H2 generation as compared to the un-coated SSCN and the standard g-C3N4 reference with MoS2 coating. The photocatalytic test results suggest that the oligomeric s-triazine dyes on the SSCN surface can provide additional light-harvesting capability and photogenerated charge carriers, and the coated MoS2 layer can serve as active sites for proton reduction towards H2 evolution. This synergistic effect of surface triazine dyes and MoS2 coating greatly promotes the activity of carbon nitride microspheres for vishible-light-driven H2 generation. This work provides a new way of future development of low-cost noble-metal-free photocatalysts for efficient solar-driven hydrogen production.

  18. Carbon Nitride-Aromatic Diimide-Graphene Nanohybrids: Metal-Free Photocatalysts for Solar-to-Hydrogen Peroxide Energy Conversion with 0.2% Efficiency.

    Science.gov (United States)

    Kofuji, Yusuke; Isobe, Yuki; Shiraishi, Yasuhiro; Sakamoto, Hirokatsu; Tanaka, Shunsuke; Ichikawa, Satoshi; Hirai, Takayuki

    2016-08-10

    Solar-to-chemical energy conversion is a challenging subject for renewable energy storage. In the past 40 years, overall water splitting into H2 and O2 by semiconductor photocatalysis has been studied extensively; however, they need noble metals and extreme care to avoid explosion of the mixed gases. Here we report that generating hydrogen peroxide (H2O2) from water and O2 by organic semiconductor photocatalysts could provide a new basis for clean energy storage without metal and explosion risk. We found that carbon nitride-aromatic diimide-graphene nanohybrids prepared by simple hydrothermal-calcination procedure produce H2O2 from pure water and O2 under visible light (λ > 420 nm). Photoexcitation of the semiconducting carbon nitride-aromatic diimide moiety transfers their conduction band electrons to graphene and enhances charge separation. The valence band holes on the semiconducting moiety oxidize water, while the electrons on the graphene moiety promote selective two-electron reduction of O2. This metal-free system produces H2O2 with solar-to-chemical energy conversion efficiency 0.20%, comparable to the highest levels achieved by powdered water-splitting photocatalysts.

  19. Low-Pt loaded on a vanadium nitride/graphitic carbon composite as an efficient electrocatalyst for the oxygen reduction reaction.

    Science.gov (United States)

    Yin, Jie; Wang, Lei; Tian, Chungui; Tan, Taixing; Mu, Guang; Zhao, Lu; Fu, Honggang

    2013-10-04

    The high cost of platinum electrocatalysts for the oxygen reduction reaction (ORR) has hindered the commercialization of fuel cells. An effective support can reduce the usage of Pt and improve the reactivity of Pt through synergistic effects. Herein, the vanadium nitride/graphitic carbon (VN/GC) nanocomposites, which act as an enhanced carrier of Pt nanoparticles (NPs) towards ORR, have been synthesized for the first time. In the synthesis, the VN/GC composite could be obtained by introducing VO3 (-) and [Fe(CN)6 ](4-) ions into the polyacrylic weak-acid anion-exchanged resin (PWAR) through an in-situ anion-exchanged route, followed by carbonization and a subsequent nitridation process. After loading only 10 % Pt NPs, the resulting Pt-VN/GC catalyst demonstrates a more positive onset potential (1.01 V), higher mass activity (137.2 mA mg(-1) ), and better cyclic stability (99 % electrochemical active surface area (ECSA) retention after 2000 cycles) towards ORR than the commercial 20 % Pt/C. Importantly, the Pt-VN/GC catalyst mainly exhibits a 4 e(-) -transfer mechanism and a low yield of peroxide species, suggesting its potential application as a low-cost and highly efficient ORR catalyst in fuel cells.