WorldWideScience

Sample records for carbon ion implantation

  1. Surface modification of commercial tin coatings by carbon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, L.J.; Sood, D.K.; Manory, R.R. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  2. High temperature annealing studies of strontium ion implanted glassy carbon

    Science.gov (United States)

    Odutemowo, O. S.; Malherbe, J. B.; Prinsloo, L.; Langa, D. F.; Wendler, E.

    2016-03-01

    Glassy carbon samples were implanted with 200 keV strontium ions to a fluence of 2 × 1016 ions/cm2 at room temperature. Analysis with Raman spectroscopy showed that ion bombardment amorphises the glassy carbon structure. Partial recovery of the glassy carbon structure was achieved after the implanted sample was vacuum annealed at 900 °C for 1 h. Annealing the strontium ion bombarded sample at 2000 °C for 5 h resulted in recovery of the glassy carbon substrate with the intensity of the D peak becoming lower than that of the pristine glassy carbon. Rutherford backscattering spectroscopy (RBS) showed that the implanted strontium diffused towards the surface of the glassy carbon after annealing the sample at 900 °C. This diffusion was also accompanied by loss of the implanted strontium. Comparison between the as-implanted and 900 °C depth profiles showed that less than 30% of the strontium was retained in the glassy carbon after heat treatment at 900 °C. The RBS profile after annealing at 2000 °C indicated that no strontium ions were retained after heat treatment at this temperature.

  3. High temperature annealing studies of strontium ion implanted glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Odutemowo, O.S., E-mail: u12052613@tuks.co.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Malherbe, J.B.; Prinsloo, L.; Langa, D.F. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E. [Institut für Festkörperphysik, Friedrich-Schiller University, Jena (Germany)

    2016-03-15

    Glassy carbon samples were implanted with 200 keV strontium ions to a fluence of 2 × 10{sup 16} ions/cm{sup 2} at room temperature. Analysis with Raman spectroscopy showed that ion bombardment amorphises the glassy carbon structure. Partial recovery of the glassy carbon structure was achieved after the implanted sample was vacuum annealed at 900 °C for 1 h. Annealing the strontium ion bombarded sample at 2000 °C for 5 h resulted in recovery of the glassy carbon substrate with the intensity of the D peak becoming lower than that of the pristine glassy carbon. Rutherford backscattering spectroscopy (RBS) showed that the implanted strontium diffused towards the surface of the glassy carbon after annealing the sample at 900 °C. This diffusion was also accompanied by loss of the implanted strontium. Comparison between the as-implanted and 900 °C depth profiles showed that less than 30% of the strontium was retained in the glassy carbon after heat treatment at 900 °C. The RBS profile after annealing at 2000 °C indicated that no strontium ions were retained after heat treatment at this temperature.

  4. Synthesis of amorphous carbon nitride by ion implantation

    Institute of Scientific and Technical Information of China (English)

    ChenZ.; OlofinjanaA.; BellJ

    2001-01-01

    N2+ were implanted into diamondlike carbon (DLC) films in an attempt to synthesizeamorphous carbon nitride. The DLC films were previously deposited on steel substrate by using anion beam sputtering deposition (IBSD) where a single Kaufman type ion gun with argon sourcewas used to sputter a graphite target and simultaneously bombard the growing film. Parallel to theion implantation route, amorphous carbon nitride films were also synthesized by directly using thereactive ion beam sputtering deposition (RIBSD) with nitrogen source to incorporate nitrogen intothe film. The structure and properties of the films were determined by using Raman spectroscopy,XPS and nano-indentation. The implantation of N2+ into a-C films offers a higher hardness thanthat directly synthesized by RIBSD, probably through an increase in sp3/sp2 ratio and in the pro-portion of nitrogen atoms chemically bonding to carbon atoms. The results show that althoughthere are differences in film composition, structure and properties between these two processes,both methods can be used for synthesis of nitrogen-containing amorphous DLC thin films whichsignificantly modify the substrate surface.

  5. Characterization of surface enhancement of carbon ion-implanted TiN coatings by metal vapor vacuum arc ion implantation

    CERN Document Server

    Chang, C L

    2002-01-01

    The modification of the surfaces of energetic carbon-implanted TiN films using metal vapor vacuum arc (MEVVA) ion implantation was investigated, by varying ion energy and dose. The microhardness, microstructure and chemical states of carbon, implanted on the surface layer of TiN films, were examined, as functions of ion energy and dose, by nanoindenter, transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. Results revealed that the microhardness increased from 16.8 up to 25.3 GPa and the friction coefficient decreased to approximately 0.2, depending on the implanted ion energy and dose. The result is attributed to the new microcrystalline phases of TiCN and TiC formed, and carbon concentration saturation of the implanted matrix can enhance the partial mechanical property of TiN films after MEVVA treatment. The concentration distribution, implantation depth and chemical states of carbon-implanted TiN coatings depended strongly on the ion dose and...

  6. Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, H. E-mail: tsuji@kuee.kyoto-u.ac.jp; Izukawa, M.; Ikeguchi, R.; Kakinoki, R.; Sato, H.; Gotoh, Y.; Ishikawa, J

    2003-05-01

    Modification of polydimethylsiloxane (PDMS) rubber by negative ion-implantation was investigated for improvement of nerve regeneration property. The PDMS rubber surface was found to have more hydrophilic property after carbon negative-ion implantation than before. At the conditions of 10 keV and 3.0 x 10{sup 15} ions/cm{sup 2}, the contact angle decreased to 83 deg. from 100 deg. . The reason of the hydrophilic modification is due to hydrophilic functional groups such as hydroxyl formed at the surface by radiation effect of ion implantation. The in vivo regeneration test of rat sciatic nerve was performed by using 18-mm-long PDMS rubber tubes with inner diameter of 2 mm, the inner surface of which was implanted with carbon negative ions at the above conditions. At 24 weeks after the clinical surgery, the sciatic nerve was regenerated through the tube between the proximal and distal nerve stumps.

  7. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    Science.gov (United States)

    Hlatshwayo, T. T.; Sebitla, L. D.; Njoroge, E. G.; Mlambo, M.; Malherbe, J. B.

    2017-03-01

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 1016 ions/cm2 and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  8. A study on biocompatibility and bactericidal properties of pyrolytic carbon by silver ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Tang, H.Q. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, T. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, X. [Tianjin Urinary Surgery Institute, Tianjin 300211 (China); Gu, H.Q. [Tianjin Urinary Surgery Institute, Tianjin 300211 (China); Zhao, J. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China)]. E-mail: jiezhao1943@126.com

    2007-02-15

    The biocompatibility and bactericidal properties of Ag{sup +}-implanted pyrolytic carbon were investigated by means of Staphylococcus aureus and Escherichia coli bacteria and some biocompatible experiments. The pyrolytic carbon samples were implanted by silver ions with the dose ranging from 5 x 10{sup 14} to 5 x 10{sup 18} ions/cm{sup 2} at an energy of 70 keV. The silver distribution in pyrolytic carbon was characterized by Rutherford Backscattering Spectrometry (RBS). The results show that the bactericidal rate for both S. aureus and E. coli increase with the ion dose when the silver ion dose is under the saturated dose of 5 x 10{sup 17} ions/cm{sup 2}. The bactericidal rate is over 97% when the ion dose exceeds that value. In comparison with the reference sample, Ag{sup +}-implanted pyrolytic carbon shows a good biocompatibility and without biotoxication by means of cytotoxicity, hemolysis and platelet tests. RBS analyses show that silver atoms penetrate into the sample surface and form a silver-rich surface region which plays an important role in killing bacteria. When the ion dose is not exceed 1 x 10{sup 16} ions/cm{sup 2}, the structure of Ag{sup +}-implanted pyrolytic carbon is kept unchanged maintaining the original biocompatibility.

  9. Effective Stress Reduction in Diamond Films on Alumina by Carbon Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    方志军; 夏义本; 王林军; 张伟丽; 马哲国; 张明龙

    2002-01-01

    We show the effective stress reduction in diamond films by implanting carbon ions into alumina substrates prior to the diamond deposition. Residual stresses in the films are evaluated by Raman spectroscopy and a more reliable method for stress determination is presented for the quantitative measurement of stress evolution. It is found that compressive stresses in the diamond films can be partly offset by the compressive stresses in the alumina substrates, which are caused by the ion pre-implantation. At the same time, the difference between the offset by the pre-stressed substrates and the total stress reduction indicates that some other mechanisms are also active.

  10. Effective stress reduction in diamond films on alumina by carbon ion implantation

    CERN Document Server

    Fang Zhi Jun; Wang Li; Zhang Wei; Ma Zhe Guo; Zhang Ming

    2002-01-01

    The authors show the effective stress reduction in diamond films by implanting carbon ions into alumina substrates prior to the diamond deposition. Residual stresses in the films are evaluated by Raman spectroscopy and a more reliable method for stress determination is presented for the quantitative measurement of stress evolution. It is found that compressive stresses in the diamond films can be partly offset by the compressive stresses in the alumina substrates, which are caused by the ion pre-implantation. At the same time, the difference between the offset by the pre-stressed substrates and the total stress reduction indicates that some other mechanisms are also active

  11. Modification in surface properties of poly-allyl-diglycol-carbonate (CR-39 implanted by Au+ ions at different fluences

    Directory of Open Access Journals (Sweden)

    Sagheer Riffat

    2016-06-01

    Full Text Available Ion implantation has a potential to modify the surface properties and to produce thin conductive layers in insulating polymers. For this purpose, poly-allyl-diglycol-carbonate (CR-39 was implanted by 400 keV Au+ ions with ion fluences ranging from 5 × 1013 ions/cm2 to 5 × 1015 ions/cm2. The chemical, morphological and optical properties of implanted CR-39 were analyzed using Raman, Fourier transform infrared (FT-IR spectroscopy, atomic force microscopy (AFM and UV-Vis spectroscopy. The electrical conductivity of implanted samples was determined through four-point probe technique. Raman spectroscopy revealed the formation of carbonaceous structures in the implanted layer of CR-39. From FT-IR spectroscopy analysis, changes in functional groups of CR-39 after ion implantation were observed. AFM studies revealed that morphology and surface roughness of implanted samples depend on the fluence of Au ions. The optical band gap of implanted samples decreased from 3.15 eV (for pristine to 1.05 eV (for sample implanted at 5 × 1015 ions/cm2. The electrical conductivity was observed to increase with the ion fluence. It is suggested that due to an increase in ion fluence, the carbonaceous structures formed in the implanted region are responsible for the increase in electrical conductivity.

  12. Optical properties of K9 glass waveguides fabricated by using carbon-ion implantation

    Science.gov (United States)

    Liu, Chun-Xiao; Wei, Wei; Fu, Li-Li; Zhu, Xu-Feng; Guo, Hai-Tao; Li, Wei-Nan; Lin, She-Bao

    2016-07-01

    K9 glass is a material with promising properties that make it attractive for optical devices. Ion implantation is a powerful technique to form waveguides with controllable depth and refractive index profile. In this work, optical planar waveguide structures were fabricated in K9 glasses by using 6.0-MeV C3+-ion implantation with a fluence of 1.0 × 1015 ions/cm2. The effective refractive indices of the guided modes were measured by using a prism-coupling system. The refractive index change in the ion-irradiated region was simulated by using the intensity calculation method. The modal intensity profile of the waveguide was calculated and measured by using the finite difference beam propagation method and the end-face coupling technique, respectively. The transmission spectra before and after the implantation showed that the main absorption band was not influenced by the low fluence dopants. The optical properties of the carbon-implanted K9 glass waveguides show promise for use as integrated photonic devices.

  13. Improvement of the corrosion and tribological properties of CSS-42L aerospace bearing steel using carbon ion implantation

    Science.gov (United States)

    Wang, Fangfang; Zhou, Chungen; Zheng, Lijing; Zhang, Hu

    2017-01-01

    The aerospace bearings steel CSS-42L was ion implanted by carbon with implantation fluxes of 5 × 1016 ions cm-2. The composition, microstructure and hardness of the carbon implanted samples were characterized using X-ray photoelectron spectroscopy, Auger electron spectroscopy, X-ray diffraction, and nanoindentation tests. The corrosion and tribological properties were also evaluated in the present work. The results shown that carbon implantation produced an amorphous layer and graphitic bounds formed at the near surface of CSS-42L steel. In the electrochemical test, the carbon implanted samples suggested lower current densities and corrosion rates. Carbon ion implanted samples shown a relative Cr-enrichment at the surface as compared with nonimplanted samples. The improved corrosion resistance is believed to be related to the formed amorphous layer, the enhancement of Cr diffusion in the carbon implantation layer which contributed the formation of passive film on the surface, the decrease of free electrons which caused by the increase of carbon fraction. The external hard layer had positive effect on the wear resistance, reducing strongly the friction coefficient about 30% and the abrasive-adhesive mechanism present in the unimplanted samples was not modified by the implantation process.

  14. The formation and stability of Si1-xCx alloys in Si implanted with carbon ions

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Si1-xCx alloys of carbon (C) concentration between 0.6%-1.0% were grown in Si by ion implantation and high temperature annealing. The formation of Si1-xCx alloys under different ion doses and their stability during annealing were studied. If the implanted dose was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implan-tation and it was difficult to form Si1-xCx alloys after being annealed at 850℃. With the increment of implanted C ion doses, the lattice damage increased and it was easier to form Si1-xCx alloys. But the lattice strain would become saturate and only part of implanted carbon atoms would occupy the substitutional positions to form Si1-xCx alloys as the implant-ed carbon dose increased to a certain degree. Once Si1-xCx alloys were formed, they were stable at 950℃, but part of their strain would release as the annealing temperature increased to 1 000℃. Stability of the alloys became worse with the increment of carbon concentration in the alloys.

  15. Transition Metal Ion Implantation into Diamond-Like Carbon Coatings: Development of a Base Material for Gas Sensing Applications

    Directory of Open Access Journals (Sweden)

    Andreas Markwitz

    2015-01-01

    Full Text Available Micrometre thick diamond-like carbon (DLC coatings produced by direct ion deposition were implanted with 30 keV Ar+ and transition metal ions in the lower percentage (<10 at.% range. Theoretical calculations showed that the ions are implanted just beneath the surface, which was confirmed with RBS measurements. Atomic force microscope scans revealed that the surface roughness increases when implanted with Ar+ and Cu+ ions, whereas a smoothing of the surface from 5.2 to 2.7 nm and a grain size reduction from 175 to 93 nm are measured for Ag+ implanted coatings with a fluence of 1.24×1016 at. cm−2. Calculated hydrogen and carbon depth profiles showed surprisingly significant changes in concentrations in the near-surface region of the DLC coatings, particularly when implanted with Ag+ ions. Hydrogen accumulates up to 32 at.% and the minimum of the carbon distribution is shifted towards the surface which may be the cause of the surface smoothing effect. The ion implantations caused an increase in electrical conductivity of the DLC coatings, which is important for the development of solid-state gas sensors based on DLC coatings.

  16. Effect of Fe ion implantation on tribological properties and Raman spectra characteristics of diamond-like carbon film

    Institute of Scientific and Technical Information of China (English)

    JIA Wen-Bao; SUN Zhuo

    2004-01-01

    Fe ions in the fluence range of 2 × 1015 to 1×1017 cm -2 were implanted into diamond-like carbon (DLC) thin film of 100 nm thick, which were deposited on silicon substrate by plasma enhanced chemical vapor deposition.Effects of Fe ion implantation on microstructure and friction coefficient of the DLC were studied. With increasing Fe ion fluence, friction coefficient of the DLC film increased as compared with that of DLC without implantation, and then decreased. The Raman spectra characteristics also show a dependence on the Fe ion fluence. With increasing the ion fluence, the sp2 bonding increased in the DLC film, resulting in the decrease of friction coefficient of the film after implantation. Substantial surface roughness was also measured.

  17. Modification of diamond-like carbon films by nitrogen incorporation via plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Flege, S., E-mail: flege@ca.tu-darmstadt.de [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Hatada, R.; Hoefling, M.; Hanauer, A.; Abel, A. [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Baba, K. [Industrial Technology Center of Nagasaki, Applied Technology Division, Omura, Nagasaki 856-0026 (Japan); Ensinger, W. [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2015-12-15

    Highlights: • Nitrogen containing diamond-like carbon films were prepared by a plasma ignited by a high voltage. • Variation of preparation method (N{sub 2} implantation, N{sub 2} and C{sub 2}H{sub 4} co-deposition). • Maximum nitrogen content similar for co-deposition and implantation. • Electrical resistivity decreases for small nitrogen contents, increases again for higher contents. - Abstract: The addition of nitrogen to diamond-like carbon films affects properties such as the inner stress of the film, the conductivity, biocompatibility and wettability. The nitrogen content is limited, though, and the maximum concentration depends on the preparation method. Here, plasma immersion ion implantation was used for the deposition of the films, without the use of a separate plasma source, i.e. the plasma was generated by a high voltage applied to the samples. The plasma gas consisted of a mixture of C{sub 2}H{sub 4} and N{sub 2}, the substrates were silicon and glass. By changing the experimental parameters (high voltage, pulse length and repetition rate and gas flow ratio) layers with different N content were prepared. Additionally, some samples were prepared using a DC voltage. The nitrogen content and bonding was investigated with SIMS, AES, XPS, FTIR and Raman spectroscopy. Their influence on the electrical resistivity of the films was investigated. Depending on the preparation conditions different nitrogen contents were realized with maximum contents around 11 at.%. Those values were compared with the nitrogen concentration that can be achieved by implantation of nitrogen into a DLC film.

  18. Influence of Zn ion implantation on structures and field emission properties of multi-walled carbon nanotube arrays

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The structures and field emission properties of multi-walled carbon nanotube arrays implanted with Zn+ by MEVVA ion implanter have been investigated.The results revealed that Zn+implantation induced structural damage and that the top of carbon nanotubes with multi-layered graphite structure were transformed into carbon nanowires with amorphous structure.Meanwhile,C:Zn solid solution was synthesized after Zn+ implantation.The turn-on field and threshold field were 0.80 and 1.31 V/μm,respectively for original multi-walled carbon nanotube arrays and were reduced to 0.66 and 1.04 V/μm due to the synthesis of C and Zn composite,in which the work function was reduced after low doses of Zn+implantation.It is indicated that low doses of Zn+implantation can improve field emission performance of multi-walled carbon nanotube arrays.Otherwise,high doses of Zn+implantation can reduce field emission properties of multi-walled carbon nanotube arrays,because radiation damage reduces the electric field enhancement factor.

  19. Ion implantation technology

    CERN Document Server

    Downey, DF; Jones, KS; Ryding, G

    1993-01-01

    Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

  20. Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

    Energy Technology Data Exchange (ETDEWEB)

    Arif, Shafaq, E-mail: sarif2005@gmail.com [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Rafique, M. Shahid [Department of Physics, University of Engineering & Technology, Lahore 54000 (Pakistan); Saleemi, Farhat; Sagheer, Riffat [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Naab, Fabian; Toader, Ovidiu [Department of Nuclear Engineering and Radiological Sciences, Michigan Ion Beam Laboratory, University of Michigan, MI 48109-2104 (United States); Mahmood, Arshad; Rashid, Rashad [National Institute of Lasers and Optronics (NILOP), P.O. Nilore, Islamabad (Pakistan); Mahmood, Mazhar [Department of Metallurgy & Materials Engineering, Pakistan Institute of Engineering & Applied Sciences (PIEAS), Islamabad (Pakistan)

    2015-09-01

    Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C{sup +} ion implantation effects on PMMA at different fluences ranging from 5 × 10{sup 13} to 5 × 10{sup 15} ions/cm{sup 2}. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV–Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 10{sup 14} to 5 × 10{sup 15} ions/cm{sup 2}. The existence of amorphization and sp{sup 2}-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV–Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10{sup −10} (Ω-cm){sup −1} (pristine) to (0.32 ± 0.01) × 10{sup −5} (Ω-cm){sup −1} (irradiated sample)

  1. Diamondlike carbon deposition on plastic films by plasma source ion implantation

    CERN Document Server

    Tanaka, T; Shinohara, M; Takagi, T

    2002-01-01

    Application of pulsed high negative voltage (approx 10 mu s pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N sub 2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N sub 2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron mic...

  2. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...

  3. The effect of ion implantation on the tribomechanical properties of carbon fibre reinforced polymers

    Energy Technology Data Exchange (ETDEWEB)

    Mistica, R.; Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Janardhana, M.N. [Deakin University, Geelong, VIC (Australia). School of Engineering and Technology

    1993-12-31

    Graphite fibre reinforced epoxy composite material (GFRP) is used extensively in the aerospace and other industries for structural application. The trend is to address the 20 to 30 year life endurance of this material in service. Mechanical joints in air crafts are exposed to dynamic loads during service and wear may be experienced by the composite material joint. Generally it has been shown that graphite fibre reinforced polymers have superior wear and friction properties as compared with the unfilled polymers. In the described experiment, ion implantation was used as a novel surface treatment. Wear and friction of a polymer composite material (GFRP) was studied and ion implantation was used in order to observe the effect on the tribomechanical properties of the material. It was found that ion implantation of C on GFRP sliding against Ti changes the tribological properties of the system, and in particular decreases the coefficient of friction and wear. 4 refs., 2 figs.

  4. Diamond-like carbon produced by plasma source ion implantation as a corrosion barrier

    Energy Technology Data Exchange (ETDEWEB)

    Lillard, R.S.; Butt, D.P.; Taylor, T.N.; Walter, K.C.; Nastasi, M.

    1998-03-01

    There currently exists a broad range of applications for which the ability to produce an adherent, hard, wear and, corrosion-resistant coating plays a vital role. These applications include engine components, orthopedic devices, textile manufacturing components, hard disk media, optical coatings, and cutting and machining tools (e.g., punches, taps, scoring dies, and extrusion dies). Ion beam processing can play an important role in all of these technologies. Plasma source ion implantation (PSII) is an emerging technology which has the potential to overcome the limitations of conventional ion implantation by: (1) reducing the time and expense for implanting onto complex shapes and large areas and (2) extending the thickness of the modification zone through ion beam enhanced plasma growth of surface coatings. In PSII, targets are placed directly in a plasma source and then pulse biased to produce a non-line-of-sight process for complex-shaped targets without complex fixturing. If the pulse bias is a relatively high negative potential (20 to 100 kV) ion implantation will result. If however, a low voltage (50--1,200 eV) high duty cycle pulse bias is applied, film deposition from the chamber gas will result, thereby increasing the extent of the surface modification into the 1--10 micron regime. To evaluate the potential for DLC to be used as a corrosion barrier, Electrochemical Impedance Spectroscopy (EIS) and traditional electrochemistry techniques were used to investigate the breakdown mechanism in chloride and nonchloride containing environments. The effect of surface preparation on coating breakdown was also evaluated.

  5. Ion implantation in polymers

    Science.gov (United States)

    Wintersgill, M. C.

    1984-02-01

    An introductory overview will be given of the effects of ion implantation on polymers, and certain areas will be examined in more detail. Radiation effects in general and ion implantation in particular, in the field of polymers, present a number of contrasts with those in ionic crystals, the most obvious difference being that the chemical effects of both the implanted species and the energy transfer to the host may profoundly change the nature of the target material. Common effects include crosslinking and scission of polymer chains, gas evolution, double bond formation and the formation of additional free radicals. Research has spanned the chemical processes involved, including polymerization reactions achievable only with the use of radiation, to applied research dealing both with the effects of radiation on polymers already in commercial use and the tailoring of new materials to specific applications. Polymers are commonly divided into two groups, in describing their behavior under irradiation. Group I includes materials which form crosslinks between molecules, whereas Group II materials tend to degrade. In basic research, interest has centered on Group I materials and of these polyethylene has been studied most intensively. Applied materials research has investigated a variety of polymers, particularly those used in cable insulation, and those utilized in ion beam lithography of etch masks. Currently there is also great interest in enhancing the conducting properties of polymers, and these uses would tend to involve the doping capabilities of ion implantation, rather than the energy deposition.

  6. Enhanced Photocatalytic Activity of C-TiO2 Thin Films Prepared by Magnetron Sputtering and Post-carbon Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    LUO Shengyun; YAN Bingxi; CAO Minjian; SHEN Jie

    2015-01-01

    TiO2 thin films were fabricated by RF magnetron sputtering on titanium substrates and then implanted with different amounts of carbon. The microstructure, valence states and optical characteristics of each sample were investigated by X-ray diffraction, X-ray photoelectron spectroscopy and UV-vis diffuse reflection spectroscopy. Photoelectric property was evaluated under visible light using a xenon lamp as illuminant. The experimental results indicate that the implanting carbon concentration has a significant influence on film’s micro structure and element valence states. The dominant valence states of carbon vary as carbon content increases. Carbon ion implantation remarkably enhances the current density and photocatalytic capability of TiO2 thin films. The optimized implanting content is 9.83×1017 ion/cm2, which gives rise to a 150%increased photocurrent and degradation rate.

  7. Diamond-like carbon films synthesized on bearing steel surface by plasma immersion ion implantation and deposition

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-xi; TANG Bao-yin; WANG Lang-ping; WANG Xiao-feng; YU Yong-hao; SUN Tao; HU Li-guo

    2004-01-01

    Diamond-like carbon (DLC) films were synthesized by plasma immersion ion implantation and deposition (PIIID) on 9Cr18 bearing steel surface. Influences of working gas pressure and pulse width of the bias voltage on properties of the thin film were investigated. The chemical compositions of the as-deposited films were characterized by Raman spectroscopy. The micro-hardness, friction and wear behavior, corrosion resistance of the samples were evaluated, respectively. Compared with uncoated substrates, micro-hardness results reveal that the maximum is increased by 88.7%. In addition, the friction coefficient decreases to about 0.1, and the corrosion resistance of treated coupons surface are improved significantly.

  8. Optical planar waveguide in sodium-doped calcium barium niobate crystals by carbon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jin-Hua, E-mail: zhaojinhuazjh@gmail.com [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Qin, Xi-Feng; Wang, Feng-Xiang; Fu, Gang; Wang, Hui-Lin [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Wang, Xue-Lin [School of Physics, Key Laboratory of Particle Physics and Particle Irradiation, Ministry of Education, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2013-07-15

    There is great interest in niobate crystals which belong to the tetragonal tungsten bronze (TTB) families owing to their intriguing properties. As one representative of such crystals, CBN (calcium barium niobate) has attracted rapidly growing attention. Because it has a higher Curie temperature than SBN (strontium barium niobate), possesses outstanding ferroelectric and it possesses optical properties. In addition, doped with sodium, CBN will show a higher Curie temperature than pure CBN. We report on the fabrication and characterization of optical planar waveguide in x-cut sodium-doped calcium barium niobate crystal by using C ion implantation. The guided-mode properties at the wavelength of 633 and 1539 nm are investigated through prism-coupling measurements, respectively. By applying direct end-face coupling arrangement, the near-field optical intensity distribution of waveguide modes is measured at 633 nm. For comparison, the modal profile of the same guided mode is also numerically calculated by the finite difference beam-propagation method via computer software BeamPROP. The transmission spectra of the waveguide before and after ion implantation treatments were investigated also. Our experiment results reveal that the waveguide could propagate light with transverse magnetic polarized direction only and it is assumed that the polarization selectivity of CBN crystal may responsible for this phenomenon.

  9. Semiconductor Ion Implanters

    Science.gov (United States)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  10. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    Energy Technology Data Exchange (ETDEWEB)

    Ayedh, H. M.; Svensson, B. G. [University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Hallén, A. [School of Information and Communication Technology (ICT), Royal Institute of Technology, SE-164 40 Kista-Stockholm (Sweden)

    2015-11-07

    The carbon vacancy (V{sub C}) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the V{sub C}-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (C{sub i}'s) and annihilation of V{sub C}'s in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the V{sub C} annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating V{sub C}'s. Concentrations of V{sub C} below ∼2 × 10{sup 11} cm{sup −3} can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the V{sub C}-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote C{sub i}-clustering and reduce dynamic defect annealing. These C{sub i}-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced C{sub i} injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the V{sub C}-concentration, which limit the net effect of the C{sub i} injection, and a competition between the two processes occurs.

  11. Formation of amorphous carbon on the surface of poly(ethylene terephthalate) by helium plasma based ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Toth, A., E-mail: totha@chemres.hu [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary); Veres, M. [Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49 (Hungary); Kereszturi, K.; Mohai, M.; Bertoti, I.; Szepvoelgyi, J. [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary)

    2011-08-15

    The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He{sup +} ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm{sup -1}, testifying to the intense formation of amorphous carbon. The area ratio of the D ({approx}1410 cm{sup -1}) to G ({approx}1570 cm{sup -1}) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment.

  12. Preparation and Properties of Ag-Containing Diamond-Like Carbon Films by Magnetron Plasma Source Ion Implantation

    Directory of Open Access Journals (Sweden)

    K. Baba

    2012-01-01

    Full Text Available The doping effect of silver on the structure and properties of diamond-like carbon (DLC films was investigated. The samples were prepared by a process combining acetylene plasma source ion implantation (high-voltage pulses of −10 kV with reactive magnetron sputtering of an Ag disc. A mixture of two gases, argon, and acetylene was introduced into the discharge chamber as working gas for plasma formation. A negative high-voltage pulse was applied to the substrate holder, thus, accelerating ions towards the substrate. The chemical composition of the deposited films was modified by the respective gas flows and determined using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The silver concentration within the DLC films influenced the structure and the tribological properties. The surface roughness, as observed by scanning electron microscopy, increased with silver concentration. The film structure was characterized by Raman spectroscopy and X-ray diffractometry (XRD. The DLC films were mainly amorphous, containing crystalline silver, with the amount of silver depending on the process conditions. The tribological properties of the films were improved by the silver doping. The lowest friction coefficient of around 0.06 was derived at a low silver content.

  13. Ion sources for ion implantation technology (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Shigeki, E-mail: sakai-shigeki@nissin.co.jp; Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki [Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205 (Japan)

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  14. High-energy ion implantation for ULSI

    Energy Technology Data Exchange (ETDEWEB)

    Tsukamoto, K.; Komori, S.; Kuroi, T.; Akasaka, Y. (LSI R and D Lab., Mitsubishi Electric Corp., Itami (Japan))

    1991-07-01

    The ''well engineering'' of a retrograde twin well formed by high-energy ion implantation for 0.5 {mu}m CMOS is demonstrated to be quite useful in improving many device characteristics, such as leakage current reduction, soft-error immunity, low latchup susceptibility, smaller device isolation dimensions, etc. In forming a heavily doped buried layer by high-energy ion implantation, a drastic reduction in leakage current has been found. This would be caused by gettering of impurities or microdefects by secondary defects which are induced either by implantation of dopant itself (''self-gettering'') or by an additional implantation of oxygen, carbon or fluorine (''proximity gettering''). (orig.).

  15. Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

    Science.gov (United States)

    Remnev, G. E.; Ivanov, Yu. F.; Naiden, E. P.; Saltymakov, M. S.; Stepanov, A. V.; Shtan'ko, V. F.

    2009-04-01

    Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.

  16. Ion implanted dielectric elastomer circuits

    Science.gov (United States)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  17. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gushenets, V. I.; Bugaev, A. S.; Oks, E. M.; Vizir, A.; Yushkov, G. Yu. [High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Seleznev, D. N.; Kulevoy, T. V.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S. [Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Dugin, S.; Alexeyenko, O. [State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow (Russian Federation)

    2016-02-15

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C{sub 4}H{sub 12}B{sub 10}O{sub 4}) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH{sub 3} = P{sub 4} + 6H{sub 2}; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P{sub 4}{sup +} ion beams were extracted. Results from devices and some additional concepts are described.

  18. Cluster Ion Implantation in Graphite and Diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2014-01-01

    Cluster ion beam technique is a versatile tool which can be used for controllable formation of nanosize objects as well as modification and processing of surfaces and shallow layers on an atomic scale. The current paper present an overview and analysis of data obtained on a few sets of graphite a...... implantation. Implantation of cobalt and argon clusters into two different allotropic forms of carbon, namely, graphite and diamond is analysed and compared in order to approach universal theory of cluster stopping in matter....... and diamond samples implanted by keV-energy size-selected cobalt and argon clusters. One of the emphases is put on pinning of metal clusters on graphite with a possibility of following selective etching of graphene layers. The other topic of concern is related to the development of scaling law for cluster...

  19. Ion implantation of superhard ceramic cutting tools

    Science.gov (United States)

    Chou, Y. Kevin; Liu, Jie

    2004-08-01

    Despite numerous reports of tool life increase by ion implantation in machining operations, ion implantation applications of cutting tools remain limited, especially for ceramic tools. Mechanisms of tool-life improvement by implantation are not clearly established due to complexity of both implantation and tool-wear processes. In an attempt to improve performance of cubic boron nitride (CBN) tools for hard machining by ion implantation, a literature survey of ion-implanted cutting tools was carried out with a focus on mechanisms of tool-wear reduction by ion implantation. Implantation and machining experiments were then conducted to investigate implantation effects on CBN tools in hard machining. A batch of CBN tools was implanted with nitrogen ions at 150 keV and 2.5×1017 ions/cm2 and further used to cut 61 HRc AISI 52100 steel at different conditions. Results show that ion implantation has strong effects on partsurface finish, moderate effect on cutting forces, but an insignificant impact on tool wear. Friction coefficients, estimated from measured cutting forces, are possibly reduced by ion implantation, which may improve surface finish. However, surprisingly, 2-D orthogonal cutting to evaluate tribological loading in hard machining showed no difference on contact stresses and friction coefficients between implanted and nonimplanted CBN tools.

  20. Structure and tribological properties of modified layer on 2024 aluminum alloy by plasma-based ion implantation with nitrogen/titanium/carbon

    Institute of Scientific and Technical Information of China (English)

    张玲召; 廖家轩; 夏立芳; 刘维民; 徐洮; 薛群基

    2003-01-01

    2024 aluminum alloy was implanted with nitrogen then titanium finally carbon by plasma-based ion implantatio to form a gradient layer.The structure and tribological properties of the layer were investigated.Its composition profiles and chemical states were analyzed with X-ray photoelectron spectroscopy(XPS).The surface carbonlayer was analyzed by Raman spectrum.The appearances were observed by atomic force microscope(AFM).Thesurface hardness was measured with the mechanical property microprobe.The dry wear tests against GCr15 steelball at various sliding loads were performed with a ball-on-disk wear tester in ambient environment.The resultsshow that the thickness of the modified layer is 1 200 nm,the carbon layer is a smooth and compact diamond-likecarbon(DLC)films,and the carbon-titanium interface is broadened due to carbon ions implantation,resulting in agood composition and structure transition between DLC films and titanium layer.Surface hardness is improvedmarkedly,with a slow and uniform change.Tribological properties are improved greatly although they reduce withthe increase of sliding loads because the modified layer becomes thin rapidly.

  1. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hatada, R., E-mail: hatada@ca.tu-darmstadt.de [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Baba, K. [Industrial Technology Center of Nagasaki, Applied Technology Division, Omura, Nagasaki 856-0026 (Japan); Sawase, T.; Watamoto, T. [Nagasaki University, Department of Applied Prosthodontics, Nagasaki 852-8523 (Japan); Matsutani, T. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Kinki University, Department of Electric and Electronic Engineering, Higashi-osaka 577-2332 (Japan)

    2014-08-15

    Highlights: • Deposition of Ag-containing diamond-like carbon films inside of tubes. • Combination of plasma source ion implantation and DC sputtering. • Antibacterial effect against S. aureus bacteria. - Abstract: Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C{sub 2}H{sub 4} plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C{sub 2}H{sub 4} was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  2. Carbon Fiber Biocompatibility for Implants

    Directory of Open Access Journals (Sweden)

    Richard Petersen

    2016-01-01

    Full Text Available Carbon fibers have multiple potential advantages in developing high-strength biomaterials with a density close to bone for better stress transfer and electrical properties that enhance tissue formation. As a breakthrough example in biomaterials, a 1.5 mm diameter bisphenol-epoxy/carbon-fiber-reinforced composite rod was compared for two weeks in a rat tibia model with a similar 1.5 mm diameter titanium-6-4 alloy screw manufactured to retain bone implants. Results showed that carbon-fiber-reinforced composite stimulated osseointegration inside the tibia bone marrow measured as percent bone area (PBA to a great extent when compared to the titanium-6-4 alloy at statistically significant levels. PBA increased significantly with the carbon-fiber composite over the titanium-6-4 alloy for distances from the implant surfaces of 0.1 mm at 77.7% vs. 19.3% (p < 10−8 and 0.8 mm at 41.6% vs. 19.5% (p < 10−4, respectively. The review focuses on carbon fiber properties that increased PBA for enhanced implant osseointegration. Carbon fibers acting as polymer coated electrically conducting micro-biocircuits appear to provide a biocompatible semi-antioxidant property to remove damaging electron free radicals from the surrounding implant surface. Further, carbon fibers by removing excess electrons produced from the cellular mitochondrial electron transport chain during periods of hypoxia perhaps stimulate bone cell recruitment by free-radical chemotactic influences. In addition, well-studied bioorganic cell actin carbon fiber growth would appear to interface in close contact with the carbon-fiber-reinforced composite implant. Resulting subsequent actin carbon fiber/implant carbon fiber contacts then could help in discharging the electron biological overloads through electrochemical gradients to lower negative charges and lower concentration.

  3. Ion Implantation and Synthesis of Materials

    CERN Document Server

    Nastasi, Michael

    2006-01-01

    Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

  4. RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon carbide synthesis study

    Science.gov (United States)

    Intarasiri, S.; Kamwanna, T.; Hallén, A.; Yu, L. D.; Janson, M. S.; Thongleum, C.; Possnert, G.; Singkarat, S.

    2006-08-01

    For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIIMPL computer codes. We also found that annealing at temperatures as high as 1000 °C had quite limited effect on the redistribution of carbon in silicon.

  5. RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand) and Institute for Science and Technology Research and Development, Chiang Mai University, Chiang Mai 50200 (Thailand)]. E-mail: saweat@yahoo.com; Kamwanna, T. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Hallen, A. [Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, S-164 40 Kista-Stockholm (Sweden); Yu, L.D. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Janson, M.S. [Department of Physics and Astronomy, B140, Frederick Reines Hall, University of California, Irvine, CA 92 697 (United States); Thongleum, C. [Institute for Science and Technology Research and Development, Chiang Mai University, Chiang Mai 50200 (Thailand); Possnert, G. [Angstrom Laboratory, Division of Ion Physics, Uppsala University, SE-751 21 Uppsala (Sweden); Singkarat, S. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2006-08-15

    For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He{sup 2+} as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I{sup 8+} as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIIMPL computer codes. We also found that annealing at temperatures as high as 1000 deg. C had quite limited effect on the redistribution of carbon in silicon.

  6. Proximity gettering of C3H5 carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

    Science.gov (United States)

    Kurita, Kazunari; Kadono, Takeshi; Okuyama, Ryousuke; Hirose, Ryo; Onaka-Masada, Ayumi; Koga, Yoshihiro; Okuda, Hidehiko

    2016-12-01

    A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with carbon and hydrogen elements that form the projection range by using hydrocarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the carbon cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.

  7. Improving electric contacts by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Xu Shiru; Zhang Ying; Zheng Tiampi

    1989-01-01

    This article studies the improvement of electric contacts by ion implantation. 1 x 10/sup 17/ cm/sup -2/ of N/sup +/ and N/sub 2//sup +/ was implanted into two kinds of electric contacts, then a make-and-break test was made with the low voltage electrical apparatus. The weight loss of the contacts, temperature rise, contact resistance and transfer of material between the two contacts were measured. The contacts implanted by ions have improved electrical erosion properties.

  8. Surface modification of sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  9. Preparation of Metal-Containing Diamond-Like Carbon Films by Magnetron Sputtering and Plasma Source Ion Implantation and Their Properties

    Directory of Open Access Journals (Sweden)

    Stefan Flege

    2017-01-01

    Full Text Available Metal-containing diamond-like carbon (Me-DLC films were prepared by a combination of plasma source ion implantation (PSII and reactive magnetron sputtering. Two metals were used that differ in their tendency to form carbide and possess a different sputter yield, that is, Cu with a relatively high sputter yield and Ti with a comparatively low one. The DLC film preparation was based on the hydrocarbon gas ethylene (C2H4. The preparation technique is described and the parameters influencing the metal content within the film are discussed. Film properties that are changed by the metal addition, such as structure, electrical resistivity, and friction coefficient, were evaluated and compared with those of pure DLC films as well as with literature values for Me-DLC films prepared with a different hydrocarbon gas or containing other metals.

  10. Ion implantation in crystalline and amorphous materials

    Science.gov (United States)

    Tasch, Al F.

    1998-05-01

    Ion implantation continues to be the selective doping technique of choice in silicon integrated circuit (IC) manufacturing, and its applications continue to grow in doping, damage gettering, and process simplification. However, in both technology and manufacturing equipment development there is a rapidly increasing need to understand in detail the dependence of implanted impurity profiles and implant-induced damage profiles in silicon on all key implant parameters. These reasons include largely reduced thermal budgets in IC processing, heavy emphasis on control of equipment and process costs, and the need for rigid manufacturing control. Towards this end, accurate, comprehensive, and computationally efficient models for ion implanted profiles (impurity and damage) in silicon are indispensable. These models greatly facilitate more timely technology development and implementation in manufacturing, improved manufacturing process control; and the development of new ion implantation tools can be executed more efficiently. This talk describes ion implant models and simulators developed in the ion implant modeling research/education project at the University of Texas at Austin. Physically based models for ion implantation into single-crystal Si have been developed for the commonly used implant species B, BF(2), As, P, and Si for the most commonly used implant energy ranges. These models have explicit dependence on the major implant parameters (energy, dose, tilt angle and rotation angle). In addition, the models have been extensively verified by the vast amount of experimental data which has been obtained in the experimental part of this project. The models have been extended down to ultra-low implant energies (model has been developed which accurately predicts as-implanted profiles for B and P up to at least 2.5 and 5 MeV, respectively. In addition, for energies below 200keV (the most commonly used energies), a rigorous physically based implant-induced damage model has

  11. Carbon Fiber Biocompatibility for Implants

    OpenAIRE

    Richard Petersen

    2016-01-01

    Carbon fibers have multiple potential advantages in developing high-strength biomaterials with a density close to bone for better stress transfer and electrical properties that enhance tissue formation. As a breakthrough example in biomaterials, a 1.5 mm diameter bisphenol-epoxy/carbon-fiber-reinforced composite rod was compared for two weeks in a rat tibia model with a similar 1.5 mm diameter titanium-6-4 alloy screw manufactured to retain bone implants. Results showed that carbon-fiber-rein...

  12. Spectroscopic studies of ion implanted PPV films

    Energy Technology Data Exchange (ETDEWEB)

    Moreau, C. (Cavendish Lab., Univ. of Cambridge (United Kingdom)); Friend, R.H. (Cavendish Lab., Univ. of Cambridge (United Kingdom)); Sarnecki, G.J. (Cavendish Lab., Univ. of Cambridge (United Kingdom)); Lucas, B. (LEPOFI, Faculte des Sciences, 87 - Limoges (France)); Moliton, A. (LEPOFI, Faculte des Sciences, 87 - Limoges (France)); Ratier, B. (LEPOFI, Faculte des Sciences, 87 - Limoges (France)); Belorgeot, C. (Lab. de Physique Moleculaire, Faculte des Sciences, 87 - Limoges (France))

    1993-03-15

    The main results of the spectroscopic analyses (infrared and ultraviolet - visible - near infrared) carried out on PPV films before and after ion implantation with halogen and alkali ions are presented in this paper. The influence of both ions nature and implantation parameters on optical properties of this polymer have been pointed out and the appearance of a weak band due to doping has been observed by infrared spectroscopy. (orig.)

  13. Cell attachment on ion implanted titanium surface

    Directory of Open Access Journals (Sweden)

    P.S. Sreejith

    2008-12-01

    Full Text Available Purpose: Of outmost importance for the successful use of an implant is a good adhesion of the surrounding tissue to the biomaterial. In addition to the surface composition of the implant, the surface topography also influences the properties of the adherent cells. In the present investigation, ion implanted and untreated surfaces were compared for cell adhesion and spreading.Design/methodology/approach: The surface topography of the surfaces were analyzed using AFM and the cell studies with SEM.Findings: The results of our present investigation is indicative of the fact that ion implanted titanium surface offer better cell binding affinity compared to untreated/polished surface.Practical implications: Success of non-biodegradable implants will first and foremost depend on biocompatibility, followed by the capacity of the surface topography of the implants to evince desired cell matrix, surface cell matrix interactions. In the present study, the cell growth on ion implanted Ti material is analyzed and discussed.Originality/value: In this paper, we have utilized ion implantation technique, which will produce nano-texturing of the surface without producing any detrimental effects to both the dimensions and properties of the implants.

  14. Optimization of the ion implantation process

    Science.gov (United States)

    Maczka, D.; Latuszynski, A.; Kuduk, R.; Partyka, J.

    This work is devoted to the optimization of the ion implantation process in the implanter Unimas of the Institute of Physics, Maria Curie-Sklodowska University, Lublin. The results obtained during several years of operation allow us to determine the optimal work parameters of the device [1-3].

  15. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie

    2013-01-01

    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  16. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Science.gov (United States)

    Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

    2014-08-01

    Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  17. Ion implantation of diamond: Damage, doping, and lift-off

    Energy Technology Data Exchange (ETDEWEB)

    Parikh, N.R.; McGucken, E.; Swanson, M.L. [North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy; Hunn, J.D.; White, C.W.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States)

    1993-09-01

    In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

  18. Effect of Implantation Machine Parameters on N+ ion Implantation for Upland Cotton (Gossypium hirsutum L.) Pollen

    Institute of Scientific and Technical Information of China (English)

    YUE Jieyu; YU Lixiang; WU Yuejin; TANG Canming

    2008-01-01

    Effect of parameters of ion implantation machine,including ion energy,total dose,dose rate,impulse energy and implantation interval on the pollen grains of upland cotton implanted with nitrogen ion beam were studied.The best parameters were screened out.The results also showed that the vacuum condition before the nitrogen ion implantation does not affect the pollen viability.

  19. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  20. Synthesis of copper nanoparticles in polycarbonate by ion implantation

    Indian Academy of Sciences (India)

    Annu Sharma; Suman Bahniwal; Sanjeev Aggarwal; S Chopra; D Kanjilal

    2011-07-01

    Copper nanoparticles have been synthesized in polycarbonate by 75 KeV Cu– ion implantation with various doses ranging from 6.4 × 1015 to 1.6 × 1017 ions/cm2 with a beam current density of 800 nA/cm2. The composites formed were structurally characterized using Ultraviolet-Visible (UV-Visible) absorption spectroscopy. The appearance of particle plasmon resonance peak, characteristic of copper nanoparticles at 603 nm in absorption spectra of polycarbonate implanted to a dose of 1.6 × 1017 ions/cm2, indicates towards the formation of copper nanoparticles in polycarbonate. Transmission electron microscopy further confirms the formation of copper nanoparticles having size ∼ 3.15 nm. The formation of copper nanoparticles in the layers carbonized by Cu– implantation has been discussed. The synthesized copper-polycarbonate nanocomposite has been found to be more conducting than polycarbonate as ascertained using current–voltage characteristics.

  1. The effects of cluster carbon implantation at low temperature on damage recovery after annealing

    Science.gov (United States)

    Onoda, Hiroshi; Nakashima, Yoshiki; Hamamoto, Nariaki; Nagayama, Tsutomu; Koga, Yuji; Umisedo, Sei; Kawamura, Yasunori; Hashimoto, Masahiro

    2012-11-01

    Amorphous Si layer formation with cluster carbon ion implantations at low substrate temperature and its effects on damage recovery and diffusion suppression have been discussed. Cluster carbon molecule species (C3Hx˜C7Hx), implantation temperature (RT ˜ -60°C), implantation dose and energy were used as parameters. Amorphous Si formation by cluster carbon implantation is more effective compared with monomer carbon implantation. Low temperature cluster carbon implantations increase amorphous Si thickness far beyond monomer carbon implantation even at very low temperature. Amorphous-crystal interface smoothness was characterized by Rutherford Backscattering Spectroscopy, and is improved by lower temperature implantations. The smoothness improvement affects the residual damage, End of Range Defects, after annealing. Thicker amorphous Si over 100 nm depth can be formed with light Cn+ molecule implantations. That makes it possible to suppress wide distributed phosphorus diffusion.

  2. Ion implantations of oxide dispersion strengthened steels

    Science.gov (United States)

    Sojak, S.; Simeg Veternikova, J.; Slugen, V.; Petriska, M.; Stacho, M.

    2015-12-01

    This paper is focused on a study of radiation damage and thermal stability of high chromium oxide dispersion strengthened steel MA 956 (20% Cr), which belongs to the most perspective structural materials for the newest generation of nuclear reactors - Generation IV. The radiation damage was simulated by the implantation of hydrogen ions up to the depth of about 5 μm, which was performed at a linear accelerator owned by Slovak University of Technology. The ODS steel MA 956 was available for study in as-received state after different thermal treatments as well as in ions implanted state. Energy of the hydrogen ions chosen for the implantation was 800 keV and the implantation fluence of 6.24 × 1017 ions/cm2. The investigated specimens were measured by non-destructive technique Positron Annihilation Lifetime Spectroscopy in order to study the defect behavior after different thermal treatments in the as-received state and after the hydrogen ions implantation. Although, different resistance to defect production was observed in individual specimens of MA 956 during the irradiation, all implanted specimens contain larger defects than the ones in as-received state.

  3. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  4. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  5. Oxidation of polyethylene implanted with low energy magnesium ions

    Energy Technology Data Exchange (ETDEWEB)

    Deslandes, Alec, E-mail: acd@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Ionescu, Mihail, E-mail: mio@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Karatchevtseva, Inna, E-mail: ikm@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Siegele, Rainer, E-mail: rns@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Cohen, David D., E-mail: dcz@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia)

    2013-07-15

    The oxidation of polyethylene implanted with low energy, i.e. 25–50 keV, Mg ions to fluences from 5 × 10{sup 12}–5 × 10{sup 16} ions/cm{sup 2} was studied. Rutherford back-scattering spectroscopy showed all implanted samples gained oxygen but the distribution did not match that of the implanted Mg. An increase in carbon content was also observed for the near-surface region. Depth profiles of hydrogen were obtained via elastic recoil detection analysis, showing that hydrogen was lost throughout and beyond the range of the Mg ions, producing unsaturated and chemically active sites available for oxidation. Fourier-transform infrared spectroscopy revealed the formation of carbon–oxygen bonding such as carbonyl groups, but showed no evidence of oxidised magnesium. Raman spectroscopy showed disordered and graphitic carbon bonding configurations were created by the irradiation, but no evidence of oxidised magnesium. The implantation of films to high fluence produced a carbonized surface-layer that made the irradiated polymer more resistant to oxidation.

  6. [Particle therapy: carbon ions].

    Science.gov (United States)

    Pommier, Pascal; Hu, Yi; Baron, Marie-Hélène; Chapet, Olivier; Balosso, Jacques

    2010-07-01

    Carbon ion therapy is an innovative radiation therapy. It has been first proposed in the forties by Robert Wilson, however the first dedicated centres for human care have been build up only recently in Japan and Germany. The interest of carbon ion is twofold: 1) the very sharp targeting of the tumour with the so called spread out Bragg peak that delivers most of the beam energy in the tumour and nothing beyond it, sparing very efficiently the healthy tissues; 2) the higher relative biological efficiency compared to X rays or protons, able to kill radioresistant tumour cells. Both properties make carbon ions the elective therapy for non resectable radioresistant tumours loco-regionally threatening. The technical and clinical experience accumulated during the recent decades is summarized in this paper along with a detailed presentation of the elective indications. A short comparison between conventional radiotherapy and hadrontherapy is proposed for the indications which are considered as priority for carbon ions.

  7. The effect of metal ion implantation on the surface mechanical properties of Mylar (PET)

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, W.; Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Yao, X.; Brown, I.G. [California Univ., Berkeley, CA (United States). Lawrence Berkeley Lab.

    1993-12-31

    Ion implantation of polymers leads to the formation of new carbonaceous materials, the revolution during implantation of various species consists of (1) ion beam induced damage: chain scission, crosslinking, molecular emission of volatile elements and compounds, stoichiometric change in the surface layer of pristine polymers; and (2) chemical effect between ion and target materials: microalloying and precipitation. Literature regarding ion implanted polymers shows that the reorganisation of the carbon network after implantation can dramatically modify several properties of pristine polymers solubility, molecular weight, and electrical, optical and mechanical properties. However, ion implantation of polymers is actually a very complex interaction which depends on not only ion species, implantation condition, but also polymer type and specific structure. In this paper the effect of Ag or Ti ions implantation on surface mechanical properties of PET (polyethylenne terephthalate) polymer is reported. There was a clear deterioration in wear resistance after implantation of both Ag and Ti ions. It is suggested that the increment of wear after implantation may result from not only ion damage but also chemical effect between ion and target material. 3 refs., 1 tab., 2 figs.

  8. Fabrication of thin diamond membranes by using hot implantation and ion-cut methods

    Science.gov (United States)

    Suk, Jaekwon; Kim, Hyeongkwon; Lim, Weon Cheol; Yune, Jiwon; Moon, Sung; Eliades, John A.; Kim, Joonkon; Lee, Jaeyong; Song, Jonghan

    2017-03-01

    A thin (2 μm) and relatively large area (3 × 3 mm2) diamond membrane was fabricated by cleaving a surface from a single crystal chemical vapor deposition (CVD) diamond wafer (3 × 3 mm2× 300 μm) using a hot implantation and ion-cut method. First, while maintaining the CVD diamond at 400 °C, a damage zone was created at a depth of 2.3 μm underneath the surface by implanting 4 MeV carbon ions into the diamond in order to promote membrane cleavage (hot implantation). According to TEM data, hot implantation reduces the thickness of the implantation damage zone by about a factor of 10 when compared to implanting carbon ions with the CVD diamond at room temperature (RT). In order to recover crystallinity, the implanted sample was then annealed at 850 °C. Next, 380 keV hydrogen ions were implanted into the sample to a depth of 2.3 μm below the surface with the CVD diamond at RT. After annealing at 850 °C, the CVD diamond surface layer was cleaved at the damage-zone due to internal pressure from H2 gas arising from the implanted hydrogen (ion-cut). A thin layer of graphite (˜300 nm) on the cleavage surface, arising from the implanted carbon, was removed by O2 annealing. This technique can potentially be used to produce much larger area membranes of variable thickness.

  9. Hip implants - Paper VI - Ion concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Sargeant, A. [Department of Biological Sciences, Ohio Northern University, Ada, OH 45810 (United States); Goswami, T. [Department of Mechanical Engineering, Ohio Northern University, Ada, OH 45810 (United States)]. E-mail: t-goswami@onu.edu

    2007-07-01

    Total hip-joint arthroplasty is performed in increasing numbers where it translates to about 0.16-0.2% of population per year in industrial countries. In most cases, an implant is a metallic component articulating with a metal, ceramic or poly-ethylene liner as seen in the case of hip, knee and spine. The metal implants release ions in vivo. Therefore, there is a need to study metallic implants and ions released as a result. Toxic concentrations of ions can lead to many adverse physiological effects, including cytotoxicity, genotoxicity, carcinogenicity, and metal sensitivity. There is a need to map ion concentrations establishing boundaries between normal and toxic levels; which however, does not exist. Reference levels of ion concentrations in body fluids and tissues determined by many studies are compiled, reviewed, and presented in this paper. The concentrations of ions released from different alloys, including cobalt, chromium, nickel, molybdenum titanium, aluminum, and vanadium, are presented in this paper. This paper reviews the literature pertaining to clinical data on metal ion concentrations in patients with metal joint prostheses, and laboratory data on the physiological effects of the metals.

  10. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  11. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  12. Improving Sustainability of Ion Implant Modules

    Science.gov (United States)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  13. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  14. Hybrid quantum circuit with implanted erbium ions

    Energy Technology Data Exchange (ETDEWEB)

    Probst, S.; Rotzinger, H.; Tkalčec, A. [Physikalisches Institut, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Kukharchyk, N.; Wieck, A. D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum (Germany); Wünsch, S.; Siegel, M. [Institut für Mikro- und Nanoelektronische Systeme, Karlsruhe Institute of Technology, D-76189 Karlsruhe (Germany); Ustinov, A. V. [Physikalisches Institut, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Laboratory of Superconducting Metamaterials, National University of Science and Technology “MISIS,” Moscow 119049 (Russian Federation); Bushev, P. A. [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany)

    2014-10-20

    We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er{sup 3+} ions in Y{sub 2}SiO{sub 5} coupled to an array of superconducting lumped element microwave resonators. The Y{sub 2}SiO{sub 5} crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y{sub 2}SiO{sub 5} sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

  15. Nanometer structure and conductor mechanism of polymer modified by metal ion implantation

    Institute of Scientific and Technical Information of China (English)

    吴瑜光; 张通和; 张燕文; 张荟星; 张孝吉; 周固

    2001-01-01

    Polyethylene terephthalate (PET) has been modified by Ag, Ti, Cu and Si ion implanta-tion with a dose ranging from 1 × l016 to 2 x 1017 ions/cm2 using a metal vapor vacuum arc (MEVVA)source. The electrical properties of PET have been improved by metal ion implantation. The resistivityof implanted PET decreased obviously with an increase in ion dose. The results show that the conduc-tive behavior of a metal ion implanted sample is different from Si-implantation samples. In order to un-derstant the mechanism of electrical conduction, the structures of implanted layer were observed in de-tail by XRD and TEM. The nano carbon particles were dispersed in implanted PET. The nano metallicparticles were built up in metallic ion implanted layers with dose range from 1 × 1016 to 1 x 1017 ions/cm2. The nanometer metal net structure was formed in implanted layer when a dose of 2 x 1017ions/cm2 is reached. Anomalous fractal growths were observed. These surface structure changes revealedconducting mechanism evolution, lt is believed that the change would result in an improvement of theconductive properties. The conducting mechanism will be changed with increasing metal ion dose.

  16. Implantation of sodium ions into germanium

    Energy Technology Data Exchange (ETDEWEB)

    Korol' , V. M., E-mail: vkorol@ctsnet.ru [Southern Federal University, Research Institute of Physics (Russian Federation); Kudriavtsev, Yu. [CINVESTAV, Dep. Ingenieria Electrica (Mexico)

    2012-02-15

    The donor properties of Na atoms introduced by ion implantation into p-Ge with the resistivity 20-40 {Omega} cm are established for the first time. Na profiles implanted into Ge (the energies 70 and 77 keV and the doses (0.8, 3, 30) Multiplication-Sign 10{sup 14} cm{sup -2}) are studied. The doses and annealing temperatures at which the thermoprobe detects n-type conductivity on the sample surface are established. After implantation, the profiles exhibit an extended tail. The depth of the concentration maximum is in good agreement with the calculated mean projected range of Na ions R{sub p}. Annealing for 30 min at temperatures of 250-700 Degree-Sign C brings about a redistribution of Na atoms with the formation of segregation peaks at a depth, which is dependent on the ion dose, and is accompanied by the diffusion of Na atoms to the surface with subsequent evaporation. After annealing at 700 Degree-Sign C less than 7% of the implanted ions remain in the matrix. The shape of the profile tail portions measured after annealing at temperatures 300-400 Degree-Sign C is indicative of the diffusion of a small fraction of Na atoms into the depth of the sample.

  17. Semiconductor applications of plasma immersion ion implantation technology

    Indian Academy of Sciences (India)

    Mukesh Kumar; Rajkumar; Dinesh Kumar; P J George

    2002-11-01

    Many semiconductor integrated circuit manufacturing processes require high dose of implantation at very low energies. Conventional beam line ion implantation system suffers from low beam current at low energies, therefore, cannot be used economically for high dose applications. Plasma immersion ion implantation (PIII) is emerging as a potential technique for such implantations. This method offers high dose rate irrespective of implantation energy. In the present study nitrogen ions were implanted using PIII in order to modify the properties of silicon and some refractory metal films. Oxidation behaviour of silicon was observed for different implantation doses. Diffusion barrier properties of refractory barrier metals were studied for copper metallization.

  18. Ion sources for energy extremes of ion implantation.

    Science.gov (United States)

    Hershcovitch, A; Johnson, B M; Batalin, V A; Kropachev, G N; Kuibeda, R P; Kulevoy, T V; Kolomiets, A A; Pershin, V I; Petrenko, S V; Rudskoy, I; Seleznev, D N; Bugaev, A S; Gushenets, V I; Litovko, I V; Oks, E M; Yushkov, G Yu; Masunov, E S; Polozov, S M; Poole, H J; Storozhenko, P A; Svarovski, A Ya

    2008-02-01

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  19. ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

    Energy Technology Data Exchange (ETDEWEB)

    HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V.; KOLOMIETS, A.A.; PERSHIN, V.I.; PETRENKO, S.V.; RUDSKOY, I.; SELEZNEV, D.N.; BUGAEV, A.S.; GUSHENETS, V.I.; LITOVKO, I.V.; OKS, E.M.; YUSHKOV, G. YU.; MASEUNOV, E.S.; POLOZOV, S.M.; POOLE, H.J.; STOROZHENKO, P.A.; SVAROVSKI, YA.

    2007-08-26

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  20. Surface microanalytical studies of nitrogen ion-implanted steel

    Science.gov (United States)

    Dodd, Charles G.; Meeker, G. P.; Baumann, Scott M.; Norberg, James C.; Legg, Keith O.

    1985-03-01

    Five types of industrial steels, 1018, 52100, M-2, 440C, and 304 were ion implanted with nitrogen and subjected to surface microanalysis by three independent surface techniques: AES, RBS, and SIMS. The results provided understanding for earlier observations of the properties of various types of steel after nitrogen implantation. The steels that retained the most nitrogen and that have been reported to benefit the most in improved tribological properties from ion implantation were ferritic carbon and austenitic stainless steels, such as soft 1018 and 304, respectively. Heat-treated martensitic carbon steels such as 52100 and M-2 tool steel were found to retain the least nitrogen, and they have been reported to benefit less from nitrogen implantation; however, the interaction of transition metal carbides in M-2 with nitrogen has not been clarified. The data showed that 440C steel retained as much nitrogen as 1018 and 304, but treatment benefits may be limited to improvements in properties related to toughness and impact resistance.

  1. Plasma immersion ion implantation for reducing metal ion release

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, C.; Garcia, J. A.; Maendl, S.; Pereiro, R.; Fernandez, B.; Rodriguez, R. J. [Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain); Leibniz-Institut fuer Oberflaechenmodifizierung, 04318 Leipzig (Germany); Universidad de Oviedo, Departamento Quimica Fisica y Analitica (Spain); Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain)

    2012-11-06

    Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

  2. Accelerating degradation rate of pure iron by zinc ion implantation

    Science.gov (United States)

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-01-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  3. Development of a microwave ion source for ion implantations

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, N., E-mail: Nbk-Takahashi@shi.co.jp; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T. [Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555 (Japan)

    2016-02-15

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.

  4. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  5. Carbon fiber-reinforced carbon as a potential implant material.

    Science.gov (United States)

    Adams, D; Williams, D F; Hill, J

    1978-01-01

    A carbon fiber-reinforced carbon is being evaluated as a promising implant material. In a unidirectional composite, high strengths (1200 MN/m2 longitudinal flexural strength) and high modulus (140 GN/m2 flexural modulus) may be obtained with an interlaminar shear strength of 18 MN/m2. Alternatively, layers of fibers may be laid in two directions to give more isotopic properties. The compatibility of the material with bone has been studied by implanting specimens in holes drilled in rat femora. For a period of up to 8 weeks, a thin layer of fibrous tissue bridged the gap between bone and implant; but this tissue mineralizes and by 10 weeks, bone can be observed adjacent to the implant, giving firm fixation. Potential applications include endosseous dental implants where a greater strength in the neck than that provided by unreinforced carbon would be advantageous.

  6. Paramagnetism in ion-implanted oxides

    CERN Document Server

    Mølholt, Torben Esmann; Gíslason, Hafliði Pétur; Ólafsson, Sveinn

    This thesis describes the investigation on para-magnetism in dilute ion-implanted single-crystal oxide samples studied by on- and off-line $^{57}$Fe emission Mössbauer spectroscopy. The ion-implantation of the radioactive isotopes ( $^{57}$Mn and $^{57}$Co) was performed at the ISOLDE facility at CERN in Geneva, Switzerland. The off-line measurements were performed at Aarhus University, Denmark. Mössbauer spectroscopy is a unique method, giving simultaneously local information on valence/spin state of the $^{57}$Fe probe atoms, site symmetry and magnetic properties on an atomic scale. The utilisation of emission Mössbauer spectroscopy opens up many new possibilities compared with traditional transmission Mössbauer spectroscopy. Among them is the possibility of working with a low concentration below 10$^{-4}$ –10$^{-3}$ at.%, where the implanted Mössbauer $^{57}$Fe probes are truly dilute impurities exclusively interacting with their nearest neighbours and therefore the possibility of crea...

  7. Production of Endohedral Fullerenes by Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  8. Computational stochastic model of ions implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zmievskaya, Galina I., E-mail: zmi@gmail.ru; Bondareva, Anna L., E-mail: bal310775@yandex.ru [M.V. Keldysh Institute of Applied Mathematics RAS, 4,Miusskaya sq., 125047 Moscow (Russian Federation); Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru [VNII Geosystem Russian Federal Center, Varshavskoye roadway, 8, Moscow (Russian Federation); Maino, Giuseppe, E-mail: giuseppe.maino@enea.it [Scuola di Lettere e BeniCulturali, University di Bologna, sede di Ravenna, via Mariani 5, 48100 Ravenna (Italy)

    2015-03-10

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

  9. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Assmann, W. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany)]. E-mail: walter.assmann@lmu.de; Schubert, M. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany); Held, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany); Pichler, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Muenchen (Germany); Chill, A. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Kiermaier, S. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Schloesser, K. [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany); Busch, H. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Schenk, K. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Streufert, D. [Acri.Tec GmbH, 16761 Hennigsdorf (Germany); Lanzl, I. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany)

    2007-04-15

    A biodegradable, {beta}-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the {beta}-emitter {sup 32}P. The influence of ion implantation and gamma sterilisation on degradation and {sup 32}P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (10{sup 15} ions/cm{sup 2}) and gamma dose (25 kGy) are found to be tolerable.

  10. Effect of Implantation Machine Parameters on N+ ion Implantation for Upland Cotton(Gossypium hirsutum L.) Pollen

    Science.gov (United States)

    Yue, Jieyu; Yu, Lixiang; Wu, Yuejin; Tang, Canming

    2008-10-01

    Effect of parameters of ion implantation machine, including ion energy, total dose, dose rate, impulse energy and implantation interval on the pollen grains of upland cotton implanted with nitrogen ion beam were studied. The best parameters were screened out. The results also showed that the vacuum condition before the nitrogen ion implantation does not affect the pollen viability.

  11. Carbon Ion Therapy

    DEFF Research Database (Denmark)

    Bassler, Niels; Hansen, David Christoffer; Herrmann, Rochus;

    On the importance of choice of target size for selective boosting of hypoxic tumor subvolumina in carbon ion therapy Purpose: Functional imaging methods in radiotherapy are maturing and can to some extent uncover radio resistant structures found within a tumour entity. Selective boost of identified...... size and PTV position. Methods: Several treatment plans are produced with TRiP, using a 256x256x256 mm3 water phantom and SOBP optimization on physical dose. Box formed PTV volumes between 0.15 - 1010 cm3, and PTV positions ranging from 3 cm to 200 cm depth (relative...

  12. Ion-Implanted Diamond Films and Their Tribological Properties

    Science.gov (United States)

    Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

    1993-01-01

    This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

  13. Plasma immersion ion implantation. (Latest citations from the EI Compendex*plus database). Published Search

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-01-01

    The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  14. PLEPS study of ions implanted RAFM steels

    Science.gov (United States)

    Sojak, S.; Slugeň, V.; Egger, W.; Ravelli, L.; Petriska, M.; Veterníková, J.; Stacho, M.; Sabelová, V.

    2014-04-01

    Current nuclear power plants (NPP) require radiation, heat and mechanical resistance of their structural materials with the ability to stay operational during NPP planned lifetime. Radiation damage much higher, than in the current NPP, is expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Investigation of perspective structural materials for new generations of nuclear power plants is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels. These steels have good characteristics as reduced activation, good resistance to volume swelling, good radiation, and heat resistance. Our experiments were focused on the study of microstructural changes of binary Fe-Cr alloys with different chromium content after irradiation, experimentally simulated by ion implantations. Fe-Cr alloys were examined, by Pulsed Low Energy Positron System (PLEPS) at FRM II reactor in Garching (Munich), after helium ion implantations at the dose of 0.1 C/cm2. The investigation was focused on the chromium effect and the radiation defects resistivity. In particular, the vacancy type defects (monovacancies, vacancy clusters) have been studied. Based on our previous results achieved by conventional lifetime technique, the decrease of the defects size with increasing content of chromium is expected also for PLEPS measurements.

  15. Characterisation of polystyrene coatings after plasma immersion ion implantation and adsorption of protein

    CERN Document Server

    Dekker, S; Steel, B; Bilek, M M M; McKenzie, D R; James, M

    2012-01-01

    A polystyrene film spun onto polished silicon substrates was implanted with either nitrogen or argon ions using plasma immersion ion implantation (PIII) and subsequently investigated by X-ray and neutron reflectometry, UV-VIS and FTIR ellipsometry, as well as by FTIR and Raman spectroscopy. The depth profile of the densified carbon structures resulting from the ion collision cascades in the polystyrene coating are clearly observed by both X-ray and neutron reflectometry. Argon ions produce a higher density modified layer at a shallower depth than nitrogen ions. The thickness measured for these graded layers agrees with the expected depths of ion implantation as calculated by SRIM. The sensitivity of X-ray and neutron reflectometry allows resolution of density and hydrogen content gradients within the graphitized layers. The treated layers were found to covalently immobilized protein directly from solution. The tropoelastin protein monolayers immobilized on the surface were characterized. Tropoelastin remained...

  16. Biological Effects on Fruit Fly by N+ ion Beam Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Mutation induced by low energy ion beam implantation has beenapplied widely both in plants and microbes. However, due to the vacuum limitation, such ion implantation into animals was never studied except for silkworm. In this study, Pupae of fruit fly were irradiated with different dosage N+ ions at energy 20 KeV to study the biological effect of ion beam on animal. The results showed a saddle-like curve exists between incubate rate and dosage. Damage of pupae by ion beam implantation was observed using scanning electron microscope. Some individuals with incomplete wing were obtained after implantation but no similar character was observed in their offspring. Furthermore, about 5.47% mutants with wide variation appeared in M1 generation. Therefore, ion beam implantation could be widely used for mutation breeding.

  17. Proton and carbon ion therapy

    CERN Document Server

    Lomax, Tony

    2013-01-01

    Proton and Carbon Ion Therapy is an up-to-date guide to using proton and carbon ion therapy in modern cancer treatment. The book covers the physics and radiobiology basics of proton and ion beams, dosimetry methods and radiation measurements, and treatment delivery systems. It gives practical guidance on patient setup, target localization, and treatment planning for clinical proton and carbon ion therapy. The text also offers detailed reports on the treatment of pediatric cancers, lymphomas, and various other cancers. After an overview, the book focuses on the fundamental aspects of proton and carbon ion therapy equipment, including accelerators, gantries, and delivery systems. It then discusses dosimetry, biology, imaging, and treatment planning basics and provides clinical guidelines on the use of proton and carbon ion therapy for the treatment of specific cancers. Suitable for anyone involved with medical physics and radiation therapy, this book offers a balanced and critical assessment of state-of-the-art...

  18. Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Uglov, V.V.; Cherenda, N.N. E-mail: info@research.bsu.unibel.by; Khodasevich, V.V.; Sokol, V.A.; Abramov, I.I.; Danilyuk, A.L.; Wenzel, A.; Gerlach, J.; Rauschenbach, B

    1999-01-01

    The results of Auger electron spectroscopy and transmission electron microscopy of the surface layer of aluminium after successive implantation by carbon and nitrogen ions are presented in this work. The energy of implanted ions is 40 keV. The implantation dose varies in the range (3.3-6.5)x10{sup 17} ions/cm{sup 2}. The findings show that successive implantation leads to the formation of two main layers in aluminium. The first layer is AlNC{sub x} (0carbon atoms form bonds with nitrogen atoms. The second layer contains disoriented Al{sub 4}C{sub 3} precipitates and carbon atoms migrated from the first layer. The mechanism of migration is discussed.

  19. Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation

    Science.gov (United States)

    Uglov, V. V.; Cherenda, N. N.; Khodasevich, V. V.; Sokol, V. A.; Abramov, I. I.; Danilyuk, A. L.; Wenzel, A.; Gerlach, J.; Rauschenbach, B.

    1999-01-01

    The results of Auger electron spectroscopy and transmission electron microscopy of the surface layer of aluminium after successive implantation by carbon and nitrogen ions are presented in this work. The energy of implanted ions is 40 keV. The implantation dose varies in the range (3.3-6.5) × 10 17 ions/cm 2. The findings show that successive implantation leads to the formation of two main layers in aluminium. The first layer is AlNC x (0 < x < 0.5) layer with violated hcp. AlN structure, where carbon atoms form bonds with nitrogen atoms. The second layer contains disoriented Al 4C 3 precipitates and carbon atoms migrated from the first layer. The mechanism of migration is discussed.

  20. Ion implantation induced blistering of rutile single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

    2015-07-01

    The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

  1. Self-organized surface ripple pattern formation by ion implantation

    Science.gov (United States)

    Hofsäss, Hans; Zhang, Kun; Bobes, Omar

    2016-10-01

    Ion induced ripple pattern formation on solid surfaces has been extensively studied in the past and the theories describing curvature dependent ion erosion as well as redistribution of recoil atoms have been very successful in explaining many features of the pattern formation. Since most experimental studies use noble gas ion irradiation, the incorporation of the ions into the films is usually neglected. In this work we show that the incorporation or implantation of non-volatile ions also leads to a curvature dependent term in the equation of motion of a surface height profile. The implantation of ions can be interpreted as a negative sputter yield; and therefore, the effect of ion implantation is opposite to the one of ion erosion. For angles up to about 50°, implantation of ions stabilizes the surface, whereas above 50°, ion implantation contributes to the destabilization of the surface. We present simulations of the curvature coefficients using the crater function formalism and we compare the simulation results to the experimental data on the ion induced pattern formation using non-volatile ions. We present several model cases, where the incorporation of ions is a crucial requirement for the pattern formation.

  2. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chang Seouk [Busan Center, Korea Basic Science Institute, Busan 609-735 (Korea, Republic of); School of Mechanical Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of); Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Won, Mi-Sook, E-mail: mswon@kbsi.re.kr [Busan Center, Korea Basic Science Institute, Busan 609-735 (Korea, Republic of); Lee, Seung Wook, E-mail: Seunglee@pusan.ac.kr [School of Mechanical Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of)

    2016-02-15

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1–10 mm{sup 2}. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

  3. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    CERN Document Server

    Baumann, H; Bilger, G; Jones, D; Symietz, I

    2002-01-01

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (alpha,alpha) backscattering and the resonant nuclear reaction sup 1 H( sup 1 sup 5 N,alpha gamma) sup 1 sup 2 C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of m...

  4. Temperature-dependant study of phosphorus ion implantation in germanium

    Science.gov (United States)

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  5. A broad chemical and structural characterization of the damaged region of carbon implanted alumina

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, M. [CIEMAT. FNL (edificio 2), Avda. Complutense, 22, 28040 Madrid (Spain)], E-mail: maria.gonzalez@ciemat.es; Roman, R.; Maffiotte, C. [CIEMAT. FNL (edificio 2), Avda. Complutense, 22, 28040 Madrid (Spain); Gonzalez-Casablanca, J. [CAI-URJC, c/Tulipan s/n, 28933 Mostoles (Spain); Perez, R. [PNT-PCB, Edifici Modular, C/Baldiri Reixac 10, 08028 Barcelona (Spain); Hole, D. [Ion Implantation Laboratory, Pevensey 2 Bdlg., University of Sussex, Brighton BN1 9QH (United Kingdom)

    2009-05-01

    As candidate materials for future thermonuclear fusion reactors, isolating ceramics will be submitted to high energy gamma and neutron radiation fluxes together with an intense particle flux. Amorphization cannot be tolerated in ceramics for fusion applications, due to the associated volume change and the deterioration of mechanical properties. Therefore, a comprehensive study was carried out to examine the effects of carbon beam irradiation on polycrystalline aluminium oxide (Al{sub 2}O{sub 3}), a ceramic component of some diagnostic and plasma heating systems. Complementary techniques have allowed a complete chemical and structural surface analysis of the implanted alumina. Implantation with 75 keV, mono-energetic carbon ions at doses of 1 x 10{sup 17} and 5 x 10{sup 17} ions/cm{sup 2} was performed on polished and thermally treated ceramic discs. The alumina targets were kept below 120 deg. C. The structural modifications induced during ion irradiation were studied by the GXRD and TEM techniques. Under these conditions, alumina is readily amorphized by carbon ions, the thickness of the ion-beam induced disordered area increasing with the ion dose. Matrix elements and ion implanted profiles were followed as a function of depth by using ToF-SIMS, indicating the maximum concentration of implanted ions to be in the deeper half of the amorphous region. Ion distribution and chemical modifications caused in the Al{sub 2}O{sub 3} substrate by carbon irradiation were corroborated with XPS. The amount of oxygen in the vicinity of the implanted alumina surface was reduced, suggesting that this element was selectively sputtered during carbon irradiation. The intensity of those peaks referring to Al-O bonds diminishes, while contributions of reduced aluminium and metal carbides are found at the maximum of the carbon distribution. TEM observations on low temperature thermally annealed specimens indicate partial recovery of the initial crystalline structure.

  6. Development of vertical compact ion implanter for gemstones applications

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science (Gems and Jewelry), Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-08-15

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  7. Development of vertical compact ion implanter for gemstones applications

    Science.gov (United States)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  8. Experimental studies of superhard materials carbon nitride CNx prepared by ion-beam synthesis method

    Institute of Scientific and Technical Information of China (English)

    辛火平; 林成鲁; 许华平; 邹世昌; 石晓红; 吴兴龙; 朱宏; P.L.FHemment

    1996-01-01

    Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found.

  9. Bacterial adhesion on ion-implanted stainless steel surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Q. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom)]. E-mail: q.zhao@dundee.ac.uk; Liu, Y. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, C. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, S. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Peng, N. [Surrey Ion Beam Centre, University of Surrey, Surrey GU2 7XH (United Kingdom); Jeynes, C. [Surrey Ion Beam Centre, University of Surrey, Surrey GU2 7XH (United Kingdom)

    2007-08-31

    Stainless steel disks were implanted with N{sup +}, O{sup +} and SiF{sub 3} {sup +}, respectively at the Surrey Ion Beam Centre. The surface properties of the implanted surfaces were analyzed, including surface chemical composition, surface topography, surface roughness and surface free energy. Bacterial adhesion of Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus, which frequently cause medical device-associated infections was evaluated under static condition and laminar flow condition. The effect of contact time, growth media and surface properties of the ion-implanted steels on bacterial adhesion was investigated. The experimental results showed that SiF{sub 3} {sup +}-implanted stainless steel performed much better than N{sup +}-implanted steel, O{sup +}-implanted steel and untreated stainless steel control on reducing bacterial attachment under identical experimental conditions.

  10. Rolling contact fatigue life of ion-implanted GCr15

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Presents an experimental research into the rooling contact fatigue life of GCr15 steel with Tix N, TiX N + Ag and Tix N + DLC layers ion-implanted using the plasma ion-implantation technology on a ball-rod style high-speed con tact fatigue tester, and concludes with test results that the fatigue life increases to varying degrees with Tix N, Tix N + Ag, and Tix N + DLC layers implanted, and increases 1.8 times with Tix N + Ag layer implanted, hairline cracks grow continuously into fatigue pits under the action of shear stress in the superficial layer of material, and ion-implantation acts to prevent initiation of cracks and slow down propagation of cracks.

  11. Ion implantation induced nanotopography on titanium and bone cell adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

    2014-08-15

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  12. SEM analysis of ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Malherbe, Johan B., E-mail: johan.malherbe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Berg, N.G. van der; Botha, A.J.; Friedland, E.; Hlatshwayo, T.T.; Kuhudzai, R.J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität, 07743 Jena (Germany); Chakraborty, P. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Silveira, E.F. da [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro (Brazil)

    2013-11-15

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag{sup +}, I{sup +} and Xe{sup +} ions were separately implanted into 6H–SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H–SiC wafers implanted with 360 keV Ag{sup +} ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I{sup +} ions implanted at 600 °C into 6H–SiC and annealed at 1600 °C. The 6H–SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H–SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room

  13. Microhardness tests of stainless steel 52100 implanted with nitrogen and carbon dioxide

    CERN Document Server

    Mardanian, M; Taheri, Z

    2003-01-01

    In this research work, samples of stainless steel 52100 disks were implanted with nitrogen and carbon dioxide ions at the energy of 90 keV. Microhardness measurement were performed to determine the hardness of the surface. The N-2 sup + implanted steels at the doses of 1x10 sup 1 8 ions cm sup sub 2 gave the highest hardness of 49.70%, while for the CO sub 2 sup + ions implantation, the hardness of 17% and 5% were obtained at the doses of 3x10 sup 1 8 and 1x10 sup 1 9 ions cm sup - 2, respectively. To support the interpretation of our microhardness results the implanted surface were analyzed by the use of XRD method. Our results indicated that the hardness of the N sub 2 sup + implanted samples are due to formation of beta-Cr N phase in the surface layer, while in the CO sub 2 + implanted samples no observation of carbon as graphite or carbide was made. In addition, the absence of any hump in the XRD spectrum indicating that carbon is not in the amorphous phase either.

  14. Multiple ion implantation effects on hardness and fatigue properties of Fe13Cr15Ni alloys

    Science.gov (United States)

    Rao, G. R.; Lee, E. H.; Boatner, L. A.; Chin, B. A.; Mansur, L. K.

    1992-09-01

    Eight complex alloys based on the composition Fe13Cr15Ni2Mo2Mn0.2Ti0.8Si0.06C were implanted simultaneously with 400 keV boron and 550 keV nitrogen, and investigated for microhardness changes and bending fatigue life. The dual implantation was found to decrease the fatigue life of all eight alloys although the implantation increased near-surface hardness of all eight alloys. This result was in contrast to the significant improvements found in the fatigue life of four B, N implanted simple Fe13Cr15Ni alloys. It was determined that the implantation suppressed surface slip band formation, the usual crack initiation site, but in the complex alloys, this suppression promoted a shift to grain boundary cracking. A similar phenomenon was also observed when the simple Fe13Cr15Ni alloys were simultaneously implanted with boron, nitrogen and carbon wherein fatigue life decreased, and gain, grain boundary cracks were observed. To test the hypothesis that ion implantation made the overall surface more fatigue resistant but led to a shift to grain boundary cracking, single crystal specimens of the ternary Fe15Cr15Ni were also implanted with boron and nitrogen ions. The fatigue life decreased for the single crystal specimens also, due to concentration of applied stress along fewer slip bands as compared to the control single crystal specimens were applied stress was relieved by slip band formation over the entire gauge region.

  15. X-ray photoelectron study of Si{sup +} ion implanted polymers

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T; Balabanov, S; Bischoff, L; Krastev, V; Stefanov, P; Avramova, I, E-mail: tania_tsvetkova@yahoo.co.u

    2010-11-01

    X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si{sup +} ions (E=30 keV, D= 1.10{sup 17} cm{sup -2}). Two kinds of polymers were studied - ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si{sup +} ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements - Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.

  16. Effects of COOH+ ion implantation on hemocompatibility of polypropylene

    Institute of Scientific and Technical Information of China (English)

    LI; Dejun(李德军); NIU; Lifang(牛丽芳)

    2002-01-01

    Carboxyl ion (COOH+) implantation was performed at 50 keV with different fluences for polypropylene. Hemocompatibility tests show that blood coagulation time and recalcification time of polypropylene were enhanced significantly with the increasing fluence. At the same time, the human endothelial cells grown on the surface of the implanted samples exhibited normal cellular growth and morphology. X-ray photoelectron spectroscopy and water contact angle analysis showed that COOH+ ion implantation rearranges chemical bonds and produces some new polar O-containing groups on the surface. The formation of polar functional groups, together with increase of roughness, induced an increase in hydrophilicity, which in turn improved the surface hemocompatibility of polypropylene.

  17. Hydrogenation of zirconium film by implantation of hydrogen ions

    Science.gov (United States)

    Yang, LIU; Kaihong, FANG; Huiyi, LV; Jiwei, LIU; Boyu, WANG

    2017-03-01

    In order to understand the drive-in target in a D–D type neutron generator, it is essential to study the mechanism of the interaction between hydrogen ion beams and the hydrogen-absorbing metal film. The present research concerns the nucleation of hydride within zirconium film implanted with hydrogen ions. Doses of 30 keV hydrogen ions ranging from 4.30 × 1017 to 1.43 × 1018 ions cm‑2 were loaded into the zirconium film through the ion beam implantation technique. Features of the surface morphology and transformation of phase structures were investigated with scanning electron microscopy, atomic force microscopy and x-ray diffraction. Confirmation of the formation of δ phase zirconium hydride in the implanted samples was first made by x-ray diffraction, and the different stages in the gradual nucleation and growth of zirconium hydride were then observed by atomic force microscope and scanning electron microscopy.

  18. Friction and wear properties of N+ ion implanted nylon 1010

    Institute of Scientific and Technical Information of China (English)

    XIONG Dang-sheng

    2004-01-01

    The PA1010 was implanted with 450 keV N+ ions to three doses of 5× 1014 cm-2 , 2.5× 1015 cm-2 and 1.25 × 1016 cm-2. The friction and wear behaviors of the ion implanted PA1010 disks rubbing with two ceramic (ZrO2 and Si3N4) balls were studied using a pin-on-disk tribometer under dry friction. The results shows that the wear resistance of PA1010 is increased with the increasing implantation doses. The adhesion, plastic deformation and plow groove are wearing mechanisms for un-implanted PA1010, while abrasive wear for implanted PA1010.

  19. Surface Engineering of Nanostructured Titanium Implants with Bioactive Ions.

    Science.gov (United States)

    Kim, H-S; Kim, Y-J; Jang, J-H; Park, J-W

    2016-05-01

    Surface nanofeatures and bioactive ion chemical modification are centrally important in current titanium (Ti) oral implants for enhancing osseointegration. However, it is unclear whether the addition of bioactive ions definitively enhances the osteogenic capacity of a nanostructured Ti implant. We systematically investigated the osteogenesis process of human multipotent adipose stem cells triggered by bioactive ions in the nanostructured Ti implant surface. Here, we report that bioactive ion surface modification (calcium [Ca] or strontium [Sr]) and resultant ion release significantly increase osteogenic activity of the nanofeatured Ti surface. We for the first time demonstrate that ion modification actively induces focal adhesion development and expression of critical adhesion–related genes (vinculin, talin, and RHOA) of human multipotent adipose stem cells, resulting in enhanced osteogenic differentiation on the nanofeatured Ti surface. It is also suggested that fibronectin adsorption may have only a weak effect on early cellular events of mesenchymal stem cells (MSCs) at least in the case of the nanostructured Ti implant surface incorporating Sr. Moreover, results indicate that Sr overrides the effect of Ca and other important surface factors (i.e., surface area and wettability) in the osteogenesis function of various MSCs (derived from human adipose, bone marrow, and murine bone marrow). In addition, surface engineering of nanostructured Ti implants using Sr ions is expected to exert additional beneficial effects on implant bone healing through the proper balancing of the allocation of MSCs between adipogenesis and osteogenesis. This work provides insight into the future surface design of Ti dental implants using surface bioactive ion chemistry and nanotopography.

  20. Enhanced Physicochemical and Biological Properties of Ion-Implanted Titanium Using Electron Cyclotron Resonance Ion Sources

    Directory of Open Access Journals (Sweden)

    Csaba Hegedűs

    2016-01-01

    Full Text Available The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have developed a Ti implant modified with Ca or dual Ca + Si ions on the surface using an electron cyclotron resonance ion source (ECRIS. The physicochemical and biological properties of ion-implanted Ti surfaces were analyzed using various analytical techniques, such as surface analyses, potentiodynamic polarization and cell culture. Experimental results indicated that a rough morphology was observed on the Ti substrate surface modified by ECRIS plasma ions. The in vitro electrochemical measurement results also indicated that the Ca + Si ion-implanted surface had a more beneficial and desired behavior than the pristine Ti substrate. Compared to the pristine Ti substrate, all ion-implanted samples had a lower hemolysis ratio. MG63 cells cultured on the high Ca and dual Ca + Si ion-implanted surfaces revealed significantly greater cell viability in comparison to the pristine Ti substrate. In conclusion, surface modification by electron cyclotron resonance Ca and Si ion sources could be an effective method for Ti implants.

  1. Statistical 3D damage accumulation model for ion implant simulators

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Mangas, J.M. E-mail: jesman@ele.uva.es; Lazaro, J.; Enriquez, L.; Bailon, L.; Barbolla, J.; Jaraiz, M

    2003-04-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  2. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    Science.gov (United States)

    Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

    2017-02-01

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  3. Optical attenuation in ion-implanted silicon waveguide racetrack resonators.

    Science.gov (United States)

    Doylend, J K; Jessop, P E; Knights, A P

    2011-08-01

    The optical absorption at wavelengths near 1550 nm has been quantified as a function of annealing temperature in ion-implanted silicon-on-insulator racetrack resonators. The variation of the output characteristics of the bus waveguide versus the concentration of implantation-induced lattice disorder in the ring is used to develop a novel method for the determination of the coupling and round-trip loss of the resonator, independently. This experimental procedure has general applicability for the determination of these parameters. Significant propagation loss is found to persist following annealing at temperatures previously observed to remove the majority of ion implantation damage. It is suggested that these annealing characteristics are a consequence of an ion implantation range which is greater than the silicon waveguide layer thickness.

  4. Fe doped Magnetic Nanodiamonds made by Ion Implantation.

    Science.gov (United States)

    Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

    2017-02-09

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  5. Statistical 3D damage accumulation model for ion implant simulators

    CERN Document Server

    Hernandez-Mangas, J M; Enriquez, L E; Bailon, L; Barbolla, J; Jaraiz, M

    2003-01-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  6. Development of industrial ion implantation and ion assisted coating processes: A perspective

    Science.gov (United States)

    Legg, Keith O.; Solnick-Legg, Hillary

    1989-04-01

    Ion beam processes have gone through a series of developmental stages, from being the mainstay of the semiconductor industry for production of integrated circuits, to new commercial processes for biomedical, aerospace and other industries. Although research is still continuing on surface modification using ion beam methods, ion implantation and ion assisted coatings for treatment of metals, ceramics, polymers and composites must now be considered viable industrial processes of benefit in a wide variety of applications. However, ion implantation methods face various barriers to acceptability, in terms not only of other surface treatment processes, but for implantation itself. This paper will discuss some of the challenges faced by a small company whose primary business is development and marketing of ion implantation and ion-assisted coating processes.

  7. Surface bioactivity of plasma implanted silicon and amorphous carbon

    Institute of Scientific and Technical Information of China (English)

    Paul K CHU

    2004-01-01

    Plasma immersion ion implantation and deposition (PⅢ&D) has been shown to be an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification single-crystal silicon and amorphous carbon is reviewed. Silicon is the most important material in the integrated circuit industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PⅢ into silicon and observed the biomimetic growth of apatite on its surface in simulated body fluid. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness. The use of this material in biomedical engineering has also attracted much attention. It has been observed in our laboratory that doping DLC with nitrogen by means of PⅢ can improve the surface blood compatibility. The properties as well as in vitro biological test results will be discussed in this article.

  8. Transport properties of ion implanted poly (p-phenylene vinylene)

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, B. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Ratier, B. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moliton, A. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moreau, C. (Cavendish Lab., Univ. of Cambridge, Cambridge (United Kingdom)); Friend, R.H. (Cavendish Lab., Univ. of Cambridge, Cambridge (United Kingdom))

    1993-04-19

    We have studied the effect of ion implantation on transport properties (thermopower S, dc conductivity [sigma], ac conductivity [sigma][sub T]) of poly (p-phenylene vinylene). We have noticed that the thermopower sign is characteristic of the implanted ion (S > 0 for halogen, S < 0 for alkali) at low implantation energy (E [<=] 50 keV). The slope of [sigma] = f (T[sup -1]) varies, with values for activation energy between 32 meV (D = 10[sup 16] ions/cm[sup 2]) and 57 meV (D = 10[sup 15] ions/cm[sup 2]): the activation energy falls as the fluence increases in the case of implantation at low energy (E [<=] 50 keV). AC conductivity has been studied as a function of frequency v (v = 20 Hz - 1 MHz) and of temperatures T (T = 100 K - 380 K). For lower fluences (D = 2.10[sup 15] ions/cm[sup 2]), at low temperatures the ac conductivity shows hopping behaviour, switching to activated behaviour at higher temperatures. For higher fluences (D = 2.10[sup 16] ions/cm[sup 2]) the main processes are thermally activated. Thus for a high implantation energy (E = 250 keV), the related conductivity is less thermally activated and the curve [sigma][sub T] = f (1/T) slightly depends on temperature (hopping mechanism). (orig.)

  9. Terahertz generation from Cu ion implantation into lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuhua, E-mail: wyh61@163.com [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan university of Science and Technology, Wuhan 430081 (China); Wang, Ruwu; Yuan, Jie [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan university of Science and Technology, Wuhan 430081 (China); Wang, Yumei [Department of Nephrology, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430022 (China)

    2014-03-15

    In this letter, the authors present first observation of terahertz generation from Cu implantation of lithium niobate crystal substrate. Lithium niobate single crystal is grown by Czochralski method. Metal nanoparticles synthesized by Cu ion implantation were implanted into lithium niobate single crystal using metal vapor vacuum arc (MEVVA) ion source. 1 kHz, 35 fs laser pulse centred at 800 nm was focused onto the samples. The supercontinuum spectra of the sample are obtained. Terahertz was generated via this kind of sample and investigated using the electro-optical sampling technique. The findings suggest that under the investigated implantation parameter, a strong spectral component in excess of 0.46 THz emission was found from Cu ion implantation of lithium niobate. -- Highlights: • We first observation of terahertz generation from Cu implantation of lithium niobate crystal substrate. • Lithium niobate single crystal is grown by Czochralski method. Cu nanoparticles in lithium niobate have been formed by using MEVVA ion source. • The THz bandwidth and center from this kind of sample were determined.

  10. Simulation methods of ion sheath dynamics in plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    WANG Jiuli; ZHANG Guling; WANG Younian; LIU Yuanfu; LIU Chizi; YANG Size

    2004-01-01

    Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is discussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some calculated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Finally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.

  11. Passive Mechanisms of Surfaces Produced by Ion Beam Mixing and Ion Implantation

    Science.gov (United States)

    1990-05-01

    34 evaporated thin film of several hundreds to thousands angstroms thickness is induced to intermix with the substrate using the collisional cascades...behavior of the ion implanted samples was silar to that of Al and the pitting potentials of the ion implanted samples ere 115 to 155 mV higher than that of...state so that the desired mixed oxide films were not formed. Ion beam mixing did impart additional stability compared to as-deposited samples since the

  12. Ion implantation phenomena in 4H-silicon carbide

    CERN Document Server

    Phelps, Gordon James

    2003-01-01

    Silicon Carbide is a promising wide band gap semiconductor with many new properties yet to be established and investigated. Ion implantation is the dominant method of incorporating dopant materials into the Silicon Carbide crystalline structure for electronic device fabrication. The implantation process of dopants into Silicon Carbide, both theoretical and practical, is described in this Thesis. Additional fabrication process steps, such as annealing, and their implications are also described. To gain further insight into the process of ion implantation into Silicon Carbide, the detailed design of a special test die is discussed. The aim of the special test die was to obtain general information such as implanted dopant sheet resistivity and to test a novel bipolar transistor design. The fabrication steps involved for the special test die are discussed in detail. The results from the special test die take the form of specific electrical measurements, together with detailed visual observations provided by a sca...

  13. On the efficiency of combined ion implantation for the creation of near-surface nitrogen-vacancy centers in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Favaro de Oliveira, Felipe; Momenzadeh, Seyed Ali; Antonov, Denis; Fedder, Helmut; Denisenko, Andrej [3. Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart (Germany); Wrachtrup, Joerg [3. Institute of Physics, Research Center SCoPE and IQST, University of Stuttgart (Germany); Max Planck Institute for Solid State Research, Stuttgart (Germany)

    2016-08-15

    The efficiency of co-implantation of different ion species to generate near-surface nitrogen-vacancy (NV) centers in diamond is analyzed by comparing the areal densities of NV centers corresponding to various experimental conditions. In particular, the effect of helium (6 keV He{sub 2}{sup +}) and carbon (10 keV C{sup +}) co-implantation within a wide range of ion fluences are studied. The total density of NV centers by co-implantation are shown to be basically a sum of the nitrogen-induced NV centers and those activated from residual nitrogen impurities present in the substrate (approximately 1ppb) by the excess of vacancies at the carbon- and helium-induced ion tracks. Such low efficiency of the co-implantation events is discussed considering the model of local clusters of vacancies at each implantation-induced ion track. This is also experimentally supported by the presence of a photoluminescence (PL) background related to radiation-induced defects measured within all implanted areas with high carbon and helium ion fluences. Further limits set by the annealing temperature are also discussed. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. N + surface doping on nanoscale polymer fabrics via ion implantation

    Science.gov (United States)

    Ho Wong, Kenneth Kar; Zinke-Allmang, Martin; Wan, Wankei

    2006-08-01

    Non-woven poly(vinyl alcohol) (PVA) fabrics composed of small diameter (∼110 nm) fibers have been spun by an electrospinning technique and then have been modified by ion implantation. 1.7 MeV N+ ion implantation with a dose of 1.2 × 1016 ions/cm2 was applied on the fabrics through a metal foil at room temperature. By using scanning electron microscopy (SEM), no surface morphology degradation has been observed on the fabric after the ion beam treatment. The diameter of the fibers has shrunk by 30% to about 74 nm. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) show that nitrogen surface doping was achieved and the formation of two new functional chemical groups (N-Cdbnd O and C-N) in the PVA is observed.

  15. Ion implantation for manufacturing bent and periodically bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo, E-mail: guidi@fe.infn.it; Mazzolari, Andrea; Paternò, Gianfranco [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy); Mattei, Giovanni, E-mail: giovanni.mattei@unipd.it; Scian, Carlo [Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Lanzoni, Luca [Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)

    2015-08-10

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

  16. Investigation of Carbon ion-implanted waveguides in tungsten bronze (Ca0.28Ba0.72)0.25(Sr0.6Ba0.4)0.75Nb2O6 single crystal

    Science.gov (United States)

    Jiao, Yang; Wang, Chuan-Kui; Li, Zong-Liang; Ren, Ying-Ying

    2014-09-01

    Planar optical waveguides were fabricated in (Ca0.28Ba0.72)0.25(Sr0.6Ba0.4)0.75Nb2O6 (CSBN25) crystal by 6.0-MeV C+ ion implantation with fluences of 2, 4 and 6 × 1014 ions/cm2 at room temperature. The mode parameters, refractive indices profiles are measured and the refractive indices behavior in the waveguide region is discussed. The shape of nuclear energy loss distribution of the C+ implantation was similar to those of the waveguide refractive index profiles, which means an inherent relationship between the waveguide formation and the energetic energy deposition. The extraordinary refractive index has a small positive change in the surface region after the implantation.

  17. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  18. Ion implantation of CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Wiecek Tomasz

    2017-01-01

    Full Text Available Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2. The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  19. Ion implantation of CdTe single crystals

    Science.gov (United States)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2016-12-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  20. Raman scattering in silicon disordered by gold ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Lavrentiev, Vasily; Vacik, Jiri; Vosecek, Vaclav [NS Lab, Nuclear Physics Institute AS CR, Rez-130, Husinec 250 68 (Czech Republic); Vorlicek, Vladimir [Institute of Physics AS CR, Na Slovance 2, Prague 182 21 (Czech Republic)

    2010-08-15

    Si (111) covered by a 250-nm thick SiO{sub 2} surface layer has been disordered through implantation of 3.035 MeV gold ions within broad range of fluences from 1 x 10{sup 13} ions/cm{sup 2} to 1 x 10{sup 16} ions/cm{sup 2}. Raman spectroscopy (514.5 nm laser) was applied for characterization of the silicon disordering. Variation of the Raman spectra of silicon after low-fluence implantation (fluences lower than 5 x 10{sup 14} ions/cm{sup 2}) in the vicinity of the transverse optical phonon (1TO) peak reflects the coexistence of bulk Si crystals (c-Si) and Si nanocrystals (nc-Si) in the implanted layer. Implantation with higher fluences yields only the stable 470 cm{sup -1} 1TO peak, corresponding to formation of amorphous phase (a-Si), in this region of the spectra. Detailed analysis of the silicon disorder was performed through calculation of the transverse acoustical phonon (1TA) peak area. The fluence dependence of the peak area reveals qualitative correlation with the depth profile of structural defects in the modified Si layer evaluated from RBS (Rutherford backscattering) experiment and from SRIM (stopping and range of ions in matter) code simulation. This correlation suggests a decrease of the structural disorder in the modified layer region enriched by vacancies. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  1. The distribution and depth of ion doses implanted into wedges by plasma immersion ion implantation in drifting and stationary plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Tarrant, R N; Devasahayam, S; McKenzie, D R; Bilek, M M M [School of Physics (A28), University of Sydney, NSW 2006 (Australia)

    2006-08-15

    The distribution of ion dose arising from plasma immersion ion implantation (PIII) of a complex shape in the form of a wedge is measured. Two types of plasma are considered: a drifting titanium plasma derived from a pulsed cathodic arc and a stationary plasma generated by PIII pulses in oxygen or nitrogen gas. The distributions of the implanted material over the surface of the aluminium wedge were studied using secondary ion mass spectroscopy and Rutherford backscattering. The effects of varying the apex angles of the wedge and the plasma density are investigated. We conclude that ion-focusing effects at the apex of the wedge were more important for the drifting plasma than for the stationary plasmas. In a drifting plasma, the ion drift velocity directed towards the apex of the wedge compresses the sheath close to the apex and enhances the concentration of the dose. For the stationary plasma, the dose is more uniform.

  2. Structural modification of tantalum crystal induced by nitrogen ion implantation

    Indian Academy of Sciences (India)

    A H RAMEZANI; M R HANTEHZADEH; M GHORANNEVISS; E DARABI

    2016-06-01

    This paper investigates the effect of nitrogen ion implantation on tantalum surface structure. In this experiment, nitrogen ions which had an energy of 30 keV and doses of $1 \\times 10^{17}$ to $10 \\times 10^{17}$ ions cm$^{−2}$ were used. X-ray diffraction analysis (XRD) was applied for both the metallic Ta substrate and the study of new structures that have been created through the nitrogen ion implantation. Atomic force microscopy (AFM) was also used tocheck the roughness variations prior to and also after the implantation phase. The experimental results show the formation of hexagonal tantalum nitride (TaN$_{0.43}$) in addition to the fact that by increasing the ion dose, the nitrogen atoms occupy more interstitial spaces in the target crystal. The nitride phase also seen for $3\\times 10^{17}$ and $5\\times 10^{17}$ ions cm$^{−2}$, while it disappeared for higher dose of $7\\times 10^{17}$ and $1\\times 10^{18}$ ions cm$^{−2}$. The FWHM of the dominant peak of tantalum nitride suggest the growth of the crystallite’s size, which is in agreement with the AFM results ofthe grains.

  3. Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Barbara, D.; Prawer, S.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, {beta}-C{sub 3}N{sub 4}, is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs.

  4. Characterization of duplex hard coatings with additional ion implantation

    Directory of Open Access Journals (Sweden)

    B. Škorić

    2012-01-01

    Full Text Available In this paper, we present the results of a study of TiN thin fi lms which are deposited by a Physical Vapour Deposition (PVD and Ion Beam Assisted Deposition (IBAD. In the present investigation the subsequent ion implantation was provided with N+2 ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of eff ects such as crystallographic orientation, morphology, topography, densifi cation of the fi lms. The evolution of the microstructure from porous and columnar grains to densel packed grains is accompanied by changes in mechanical and physical properties. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM, Atomic Force Microscope (AFM, X-ray diff raction (XRD and Energy Dispersive X-ray analysis (EDAX.

  5. Analysis of metal ion release from biomedical implants

    Directory of Open Access Journals (Sweden)

    Ivana Dimić

    2013-06-01

    Full Text Available Metallic biomaterials are commonly used for fixation or replacement of damaged bones in the human body due to their good combination of mechanical properties. The disadvantage of metals as implant materials is their susceptibility to corrosion and metal ion release, which can cause serious health problems. In certain concentrations metals and metal ions are toxic and their presence can cause diverse inflammatory reactions, genetic mutations or even cancer. In this paper, different approaches to metal ion release examination, from biometallic materials sample preparation to research results interpretation, will be presented. An overview of the analytical techniques, used for determination of the type and concentration of released ions from implants in simulated biofluids, is also given in the paper.

  6. EPR of ion-implanted, laser-annealed silicon

    Energy Technology Data Exchange (ETDEWEB)

    Brower, K.L.; Peercy, P.S.

    1979-01-01

    Electron paramagnetic resonance and ion backscattering measurements were made on ion-implanted, pulsed laser-annealed silicon. For phosphorus-implanted silicon (3 x 10/sup 13/ 200 keV P/sup +//cm/sup 2/) the electrical activity of the implanted donors is restored after laser annealing with greater than or equal to 1.8 J/cm/sup 2/. Silicon made amorphous with 2 x 10/sup 15/ 200 keV Si/sup +//cm/sup 2/ and implanted with 3 x 10/sup 13/ 200 keV P/sup +//cm/sup 2/ can be restored to crystallinity after laser annealing, but electrical activity of the P was not restored due to residual defects for laser energies less than or equal to 3 J/cm/sup 2/. Electrical activity can be restored, at least in part, for amorphous silicon implanted at lower energies (approx. = 50 keV). We also observed that N/sub 2/ reacts with amorphous silicon surfaces to form silicon-nitride. Under laser annealing the N is redistributed and exists as an N interstitial within the implanted layer.

  7. Hardening of Metallic Materials Using Plasma Immersion Ion Implantation (PIII)

    Science.gov (United States)

    Xu, Yufan; Clark, Mike; Flanagan, Ken; Milhone, Jason; Nonn, Paul; Forest, Cary

    2016-10-01

    A new approach of Plasma Immersion Ion Implantation (PIII) has been developed with the Plasma Couette Experiment Upgrade (PCX-U). The new approach efficiently reduces the duty cycle under the same average power for PIII. The experiment uses a Nitrogen plasma at a relatively high density of 1010 1011 cm-3 with ion temperatures of working cycle. The samples (Alloy Steel 9310) are analyzed by a Vicker Hardness Tester to study the hardness and X-ray Photoelectron Spectroscopy (XPS) to study implantation density and depth. Different magnetic fields are also applied on samples to reduce the energy loss and secondary emission. Higher efficiency of implantation is expected from this experiment and the results will be presented. Hilldale Undergraduate/Faculty Research Fellowship of University of Wisconsin-Madison; Professor Cary Forest's Kellett Mid-Career Faculty Award.

  8. Study of ion implantation profiles by the PIXE technique

    Science.gov (United States)

    Midy, P.; Lagarde, G.; Brissaud, I.; Frontier, J. P.; Chaumont, J.

    1998-03-01

    The RBS technique is currently used with alpha particles as a non-destructive way of studying concentration depth profiles. This technique is especially convenient in characterizing heavy atom distributions inside a matrix of lighter elements, and its use is less convenient in the case of light elements in a matrix of heavier ones. On the other hand the probing depth is limited by the small range of alpha particles in the matrix. We present here a new procedure for determining ion implantation profiles by means of the PIXE technique and by varying the impinging proton energy. As an example, silicon ions of two energies have been implanted into pure titanium samples in order to obtain implantation profiles with a double peak. The results presented here are in good agreement with the calculations using the TRIM code.

  9. Surface induced reactivity for titanium by ion implantation.

    Science.gov (United States)

    Pham, M T; Reuther, H; Matz, W; Mueller, R; Steiner, G; Oswald, S; Zyganov, I

    2000-06-01

    Calcium and phosphorus storage in a thin layer of titanium surface was achieved by ion implantation. We study the reactivity of this surface in response to a hydrothermal treatment. The incipient implanted species are observed to convert to Ca(2+) and PO(4)(3-), the precursors for generating calcium phosphate polymorphs. Hydroxyapatite is formed from these precursors by an interface-liquid mediated mineralization preceded by the hydrolysis of oxygen compounds of Ca and P from the solid phase. The morphology and organization of apatite mineral is controlled by the fluid dynamics reflecting the surface remodeling to adapt to the available local environment. Exposed to calcium and phosphate ion containing solution, the hydrothermally treated surface templates hydroxyapatite deposition. Ca and P implanted Ti surface was shown to be chemically and morphologically actively involved in the interfacial reactions.

  10. Vickers hardness measurement of ion implanted MgO

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, Y. (TRCRE, JAERI, 1233 Watanuki-machi, Takasaki, Gunma 370-12 (Japan)); Rueck, D.M. (Materialforschung, UNILAC, GSI, D-6100, Darmstadt (Germany)); Vogt, D. (Materialforschung, UNILAC, GSI, D-6100, Darmstadt (Germany)); Leible, K. (Materialforschung, UNILAC, GSI, D-6100, Darmstadt (Germany)); Khubeis, I. (University of Jordan, P.O. Box 13097, Amman (Jordan)); Meyer, O. (INFP, KfK, D-7500, Karlsruhe 1 (Germany))

    1994-06-01

    The Vickers hardness was measured for single crystals of MgO(100) implanted with 130 keV or 1.8 MeV Ar[sup +] ions and with 400 keV Xe[sup 2+] ions by means of the indentation technique with an applied load of 0.4-30 mN. Implantation with 130 keV Ar[sup +] and 400 keV Xe[sup 2+] gave similar results in hardening of MgO surface layers. In addition, the dose dependence of the measured hardness curve showed that a softening mechanism takes place at high doses. High energy implantation (1.8 MeV Ar[sup +]) made a hardened surface layer on MgO. This hardened layer also became softer at high doses. ((orig.))

  11. Erbium ion implantation into different crystallographic cuts of lithium niobate

    Science.gov (United States)

    Nekvindova, P.; Svecova, B.; Cajzl, J.; Mackova, A.; Malinsky, P.; Oswald, J.; Kolistsch, A.; Spirkova, J.

    2012-02-01

    Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO 3, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence. In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO 3 layers were fabricated by medium energy implantation under various experimental conditions. The Er + ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ion cm -2 into LiNbO 3 single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He + ions. The photoluminescence spectra of the samples were measured to determine the

  12. Microactuators based on ion implanted dielectric electroactive polymer (EAP) membranes

    NARCIS (Netherlands)

    Dubois, Philippe; Rosset, Samuel; Koster, Sander; Stauffer, Johann; Mikhailov, Serguei; Dadras, Massoud; de Rooij, Nico-F.; Shea, Herbert

    2006-01-01

    We report on the first successfully microfabricated and tested ion implanted dielectric electroactive polymer (DEAP) actuators. Dielectric EAP (DEAP) actuators combine exceptionally high energy-density with large amplitude displacements [S. Ashley, Artificial muscles, Sci. Am. 289 (2003) 52-59: R. P

  13. Buried injector logic, a vertical IIL using deep ion implantation

    NARCIS (Netherlands)

    Mouthaan, A.J.

    1987-01-01

    A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is satura

  14. Electronic properties of ion-implanted yttria-stabilized zirconia

    NARCIS (Netherlands)

    Vohrer, U.; Wiemhöfer, H.-D.; Göpel, W.; Hassel, van B.A.; Burggraaf, A.J.

    1993-01-01

    Ion implantation of iron and titanium has been applied to modify the surface properties of polycrystalline yttria-stabilized zirconia ((ZrO2)0.87(YO1.5)0.13 (YSZ)) discs in an attempt to prepare surfaces with a mixed conductivity and by this an enhanced surface oxygen exchange kinetics. Surface-sen

  15. Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

    Science.gov (United States)

    Wang, Xiaotie; Berke, Kara; Rudawski, Nicholas G.; Venkatachalam, Dinesh K.; Elliman, Robert G.; Fridmann, Joel; Hebard, Arthur F.; Ren, Fan; Gila, Brent P.; Appleton, Bill R.

    2016-07-01

    In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control the quantity and quality of graphene (G), few-layer graphene (FLG), and other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations of Si- plus C- and Au+ ions in c-SiC showed that both the thickness of the amorphous layer formed by ion damage and the doping effect of the implanted Au enhance the formation of G and FLG during PLA. The relative contributions of the amorphous and doping effects were studied separately, and thermal simulation calculations were used to estimate surface temperatures and to help understand the phase changes occurring during PLA. In addition to the amorphous layer thickness and catalytic doping effects, other enhancement effects were found to depend on other ion species, the annealing environment, PLA fluence and number of pulses, and even laser frequency. Optimum II and PLA conditions are identified and possible mechanisms for selective synthesis of G, FLG, and carbon nanostructures are discussed.

  16. Effect of Mo ion-implantation on the adhesion of diamond coatings

    CERN Document Server

    Yang Shie; Wang Xiao Ping; Li Hui; Ma Bing Xian; Qin Guang Yong; Zhang Bing Lin

    2002-01-01

    Diamond coatings were deposited on the cobalt-cemented tungsten carbide (YG6) substrates, which have been implanted with Mo ions, by microwave plasma CVD (MPCVD) method. The effect of ion-implantation on the adhesion of diamond coatings was studied. The results showed that the chemical compositions of cemented carbide substrate surfaces change obviously after Mo ion-implantation; and the adhesion strength between the CVD diamond coatings and the substrates implanted with Mo ions in proper concentration is improved remarkably

  17. Suppression of tin precipitation in SiSn alloy layers by implanted carbon

    Energy Technology Data Exchange (ETDEWEB)

    Gaiduk, P. I., E-mail: gaiduk@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk (Belarus); Lundsgaard Hansen, J., E-mail: johnlh@phys.au.dk; Nylandsted Larsen, A., E-mail: anl@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Bregolin, F. L., E-mail: f.lipp-bregolin@hzdr.de; Skorupa, W., E-mail: W.Skorupa@hzdr.de [Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)

    2014-06-09

    By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

  18. Mass spectrometry improvement on an high current ion implanter

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, J.G., E-mail: jgabriel@deea.isel.ipl.pt [Instituto Superior de Engenharia de Lisboa and Centro de Fisica Nuclear of the University of Lisbon, Rua Conselheiro Emidio Navarro, 1, 1959-007 Lisbon (Portugal); Alegria, F.C., E-mail: falegria@lx.it.pt [Instituto Superior Tecnico/Technical University of Lisbon and Instituto de Telecomunicacoes, Av. Rovisco Pais, 1, 1049-001 Lisbon (Portugal); Redondo, L.M., E-mail: lmredondo@deea.isel.ipl.pt [Instituto Superior de Engenharia de Lisboa and Centro de Fisica Nuclear of the University of Lisbon, Rua Conselheiro Emidio Navarro, 1, 1959-007 Lisbon (Portugal); Rocha, J., E-mail: jrocha@itn.pt [Instituto Tecnologico Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal)

    2011-12-15

    The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source in a high current implanter is described. The spectrometry system uses two signals (x-y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. The developed system uses a PC to control the displaying of the extracted beam mass spectrum, and also recording of all data acquired for posterior analysis. The operator uses a LabVIEW code that enables the interfacing between an I/O board and the ion implanter. The experimental results from an ion implantation experiment are shown.

  19. Evidence of light guiding in ion-implanted diamond

    CERN Document Server

    Lagomarsino, S; Bosia, F; Vannoni, M; Calusi, S; Giuntini, L; Massi, M

    2016-01-01

    We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the study of the multi-modal structure of the propagating electromagnetic field. The possibility of defining optical and photonic structures by direct ion writing opens a range of new possibilities in the design of quantum-optical devices in bulk single crystal diamond.

  20. Cooperative emission in ion implanted Yb:YAG waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, G V; Desirena, H; De la Rosa, E [Centro de Investigaciones en Optica, Loma del Bosque 115, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico); Flores-Romero, E; Rickards, J; Trejo-Luna, R [Instituto de Fisica, UNAM, Apartado Postal 20364, 01000 Mexico, D. F. (Mexico); Marquez, H, E-mail: gvvazquez@cio.mx [Departamento de Optica, CICESE, Km 107 Carr. Tijuana-Ensenada, 22860 Ensenada, B. C. (Mexico)

    2011-01-01

    In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb{sup 3+} ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm{sup 3+} and Er{sup 3+} traces. The results include absorption and emission curves as well as decay time rates.

  1. Ion implantation damage and crystalline-amorphous transition in Ge

    Energy Technology Data Exchange (ETDEWEB)

    Impellizzeri, G.; Mirabella, S.; Grimaldi, M.G. [Universita di Catania, MATIS IMM-CNR (Italy); Dipartimento di Fisica e Astronomia, Catania (Italy)

    2011-05-15

    Experimental studies on the damage produced in (100) Ge substrates by implantation of Ge{sup +} ions at different energies (from 25 to 600 keV), fluences (from 2 x 10{sup 13} to 4 x 10{sup 14} cm{sup -2}) and temperature (room temperature, RT, or liquid-nitrogen temperature, LN{sub 2}T) have been performed by using the Rutherford backscattering spectrometry technique. We demonstrated that the higher damage rate of Ge with respect to Si is due to both the high stopping power of germanium atoms and the low mobility of point defects within the collision cascades. The amorphization of Ge has been modeled by employing the critical damage energy density model in a large range of implantation energies and fluences both at RT and LN{sub 2}T. The experimental results for implantation at LN{sub 2}T were fitted using a critical damage energy density of {proportional_to}1 eV/atom. A fictitious value of {proportional_to}5 eV/atom was obtained for the samples implanted at RT, essentially because at RT the damage annihilation plays a non-negligible role against the crystalline-amorphous transition phase. The critical damage energy density model was found to stand also for other ions implanted in crystalline Ge (Ar{sup +} and Ga{sup +}). (orig.)

  2. Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, J.H. [Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Hsieh, H.Y.; Wu, C.W. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, C.M. [Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan, ROC (China)

    2015-12-15

    This study investigated surface blistering characteristics due to H and He ions co-implanted in silicon at room temperature. The H and He ion energies were 40 and 50 keV, respectively, so that their depth profiles were similar. The total implantation fluence for the H and He ions was 5 × 10{sup 16} cm{sup −2} under various fluence fractions in the H ions. The implantation sequences under investigation were He + H and H + He. Dynamic optical microscopy (DOM) was employed in order to dynamically analyze surface blistering characteristics. This study used DOM data to construct so-called time–temperature–transformation (T–T–T) curves to easily predict blistering and crater transformation at specific annealing times and temperatures. The results revealed that the curves of blister initialization, crater initialization, and crater completion in the He + H implant occurred at a lower annealing temperature but with a longer annealing time compared to those in the H + He implant. Furthermore, the threshold annealing temperatures for blister and crater formation in the He + H implant were lower than they were in the H + He implant. The size distributions of the blisters and craters in the He + H implant extended wider than those in the H + He implant. In addition, the He + H implant exhibited larger blisters and craters compared to the ones in the H + He implant. Since the former has a higher percentage of exfoliation area than the latter, it is regarded as the more optimal implantation sequence.

  3. 120-kV ion-implantation system

    Energy Technology Data Exchange (ETDEWEB)

    Bhatia, M.S.; Bhattacharya, P.K.; Gaonkar, S.; Kansara, M.J.; Sarma, N.; Wagh, A.G.

    1980-01-01

    A compact and versatile heavy ion accelerator has been constructed for the uniform implantation of wafers with beams of microamperes and acceleration voltages of up to 120 keV. The mass analysis of the ion beam is carried out within the high voltage terminal at an energy of 10 keV after beam formation and focussing by an Extractor-cum-Einzel lens. The electromagnet utilized for this was of 14/sup 0/ bending angle. Acceleration is provided by a modified insulated core transformer of five sections operating on three phase power input. Provision is made for the implantation of either single targets and for the batch implantation of up to 36 wafers at a time. The ion source is a Nielsen type in which evaporation and ionization are achieved by the impact of thermionic electrons from a hot filament. It is capable of delivering currents in the microampere range for most of the elements and accepts liquid, solid and gaseous charges. While the facility enables implants of a wide range of doses, species and energies, it is mainly used for boron and phosphorous doping in semiconductors. Electrostatic scanning in two dimensions ensures maximum uniformity. All controls are operated at ground potential and are easily accessible.

  4. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C.M.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia); Leech, P.L. [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1996-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  5. Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hugh; Todorov, Stan; Colombeau, Benjamin; Rodier, Dennis; Kouzminov, Dimitry; Zou Wei; Guo Baonian; Khasgiwale, Niranjan; Decker-Lucke, Kurt [Applied Materials, Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930 (United States)

    2012-11-06

    We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.

  6. Pulse height defect of energetic heavy ions in ion-implanted Si detectors

    Science.gov (United States)

    Pasquali, G.; Casini, G.; Bini, M.; Calamai, S.; Olmi, A.; Poggi, G.; Stefanini, A. A.; Saint-Laurent, F.; Steckmeyer, J. C.

    1998-02-01

    The pulse height defect in ion-implanted silicon detectors for elastically scattered 93Nb, 100Mo, 116Sn, 120Sn and 129Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature.

  7. Pulse height defect of energetic heavy ions in ion-implanted Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pasquali, G.; Casini, G.; Bini, M.; Calamai, S.; Olmi, A.; Poggi, G.; Stefanini, A.A. [Istituto Nazionale di Fisica Nucleare, Florence (Italy)]|[Univ. of Florence (Italy); Saint-Laurent, F. [DRFC/STEP, CEN Cadarache, 13108 Saint Paul Lez Durance Cedex (France); Steckmeyer, J.C. [Laboratoire de Physique Corpuscolaire, ISMRA, 14050 Caen Cedex (France)

    1998-03-01

    The pulse height defect in ion-implanted silicon detectors for elastically scattered {sup 93}Nb, {sup 100}Mo, {sup 116}Sn, {sup 120}Sn and {sup 129}Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature. (orig.). 14 refs.

  8. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    Energy Technology Data Exchange (ETDEWEB)

    Xu Juan, E-mail: doctorxue@126.com [Implant Center, School of Stomatology Jilin University, Changchun, Jilin (China) and Stomatological Hospital, Urumqi, Xinjiang (China); Ding Gang [Department of Stomatology, Yidu Central Hospital, Weifang, Shandong (China); Capital Medical University School of Stomatology, Beijing (China); Li Jinlu; Yang Shenhui; Fang Bisong [Capital Medical University School of Stomatology, Beijing (China); Sun Hongchen, E-mail: hcsun@jlu.edu.cn [Implant Center, School of Stomatology Jilin University, Changchun, Jilin (China); Zhou Yanmin, E-mail: zhouym62@126.com [Implant Center, School of Stomatology Jilin University, Changchun, Jilin (China)

    2010-10-01

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased (p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

  9. [Carbon fiber reinforced polysulfone--a new implant material].

    Science.gov (United States)

    Claes, L

    1989-12-01

    Carbon fibre reinforced polysulfone is a composite material which contains two materials of well known biocompatibility. In comparison to metals this composite material has some advantages which makes it favourable particularly for implants in tumor surgery. The custom made arrangement of fibres in the composite allows the development of implants with special mechanical properties. The radiolucency of the material avoids problems caused by the reflection of x-rays, using metal implants. This special property allows the exact calculation of postoperative radiation doses of tumor patients. Simultaneously the structures behind the implants are not hidden. All implants can be machined during the operation to adapt them to the individual anatomical situation. Animal experimental and clinical applications of plates, screws and spinal segmental replacement implants made of this composite material have shown good results so far.

  10. [Carbon fiber-reinforced plastics as implant materials].

    Science.gov (United States)

    Bader, R; Steinhauser, E; Rechl, H; Siebels, W; Mittelmeier, W; Gradinger, R

    2003-01-01

    Carbon fiber-reinforced plastics have been used clinically as an implant material for different applications for over 20 years.A review of technical basics of the composite materials (carbon fibers and matrix systems), fields of application,advantages (e.g., postoperative visualization without distortion in computed and magnetic resonance tomography), and disadvantages with use as an implant material is given. The question of the biocompatibility of carbon fiber-reinforced plastics is discussed on the basis of experimental and clinical studies. Selected implant systems made of carbon composite materials for treatments in orthopedic surgery such as joint replacement, tumor surgery, and spinal operations are presented and assessed. Present applications for carbon fiber reinforced plastics are seen in the field of spinal surgery, both as cages for interbody fusion and vertebral body replacement.

  11. Stoichiometric titanium dioxide ion implantation in AISI 304 stainless steel for corrosion protection

    Science.gov (United States)

    Hartwig, A.; Decker, M.; Klein, O.; Karl, H.

    2015-12-01

    The aim of this study is to evaluate the applicability of highly chemically inert titanium dioxide synthesized by ion beam implantation for corrosion protection of AISI 304 stainless steel in sodium chloride solution. More specifically, the prevention of galvanic corrosion between carbon-fiber reinforced plastic (CFRP) and AISI 304 was investigated. Corrosion performance of TiO2 implanted AISI 304 - examined for different implantation and annealing parameters - is strongly influenced by implantation fluence. Experimental results show that a fluence of 5 × 1016 cm-2 (Ti+) and 1 × 1017 cm-2 (O+) is sufficient to prevent pitting corrosion significantly, while galvanic corrosion with CFRP can already be noticeably reduced by an implantation fluence of 5 × 1015 cm-2 (Ti+) and 1 × 1016 cm-2 (O+). Surface roughness, implantation energy and annealing at 200 °C and 400 °C show only little influence on the corrosion behavior. TEM analysis indicates the existence of stoichiometric TiO2 inside the steel matrix for medium fluences and the formation of a separated metal oxide layer for high fluences.

  12. Effect of ion implantation upon erosion resistance of polyimide films in space environment

    Institute of Scientific and Technical Information of China (English)

    DUO Shu-wang; LI Mei-shuan; ZHOU Yan-chun

    2006-01-01

    The atomic oxygen (AO) resistance of Si ion implanted polyimide films in the ground-based AO simulation facility was investigated by scanning electron microscopy (SEM),X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results show that at the initial stage of AO exposure the implanted sample has a small mass change,and then is stabilized. The erosion yield of the implanted polyimide film decreases by about two orders of magnitude compared with that of the polyimide film. The analysis through XPS and AES indicates that a continuous high-quality protective oxide-based (SiO2) surface layer is formed on the implanted polyimide films after the AO exposure. It can provide high-quality erosion protection for these materials. The implanted polyimide fully restores its original color and the carbonization effect disappears on the whole after AO exposure. Thermal-optical properties and surface morphology of the implanted polyimide materials are not altered. The modified materials have a markedly increased erosion resistance in AO environment.

  13. Influence of ion species ratio on grid-enhanced plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    Wang Jiu-Li; Zhang Gu-Ling; Liu Yuan-Fu; Wang You-Nian; Liu Chi-Zi; Yang Si-Ze

    2004-01-01

    @@ Grid-enhanced plasma source ion implantation (GEPSII) is a newly proposed technique to modify the inner-surface properties of a cylindrical bore. In this paper, a two-ion fluid model describing nitrogen molecular ions N2+ and atomic ions N+ is used to investigate the ion sheath dynamics between the grid electrode and the inner surface of a cylindrical bore during the GEPSII process, which is an extension of our previous calculations in which only N2+ was considered.Calculations are concentrated on the results of ion dose and impact energy on the target for different ion species ratios in the core plasma. The calculated results show that more atomic ions N+ in the core plasma can raise the ion impact energy and reduce the ion dose on the target.

  14. Factors affecting the ion beam implantation in silicon

    CERN Document Server

    El-Shanshoury, A I

    2003-01-01

    The factors affecting the ion beam implantation in silicon have been studied using boron, phosphorus, oxygen, and argon ions having energy range 0.5 ke V-200 ke V. It was found that the range of the ions in silicon increases with the increase of their energy and decreases with the increase of their masses. The ionization process is found to be the main process for causing damage in the silicon matrix whether it is produced by the accelerated ions or by the recoiled silicon atoms. The magnitude of ionization in silicon is found to be inversely proportional to the mass of ions. Ionization produced by ions or recoils shows different contributions to the damage depending on the mass of ions where the ions energy loss to ionization decreases from 70% to 23% as the mass is increased from 11 for boron (B) to 40 for argon (Ar). Its magnitude, as produced by ions, is found to decrease with the increase of their masses. Its value is observed to increase in a complementary way with the mass increase. Ions energy loss to...

  15. Annealing of ion-implanted GaN

    CERN Document Server

    Burchard, A; Stötzler, A; Weissenborn, R; Deicher, M

    1999-01-01

    $^{111m}$Cd and $^{112}$Cd ions have been implanted into GaN. With photoluminescence spectroscopy and perturbed $\\gamma-\\gamma$-angular correlation spectroscopy (PAC) the reduction of implantation damage and the optical activation of the implants have been observed as a function of annealing temperature using different annealing methods. The use of N$_{2}$ or NH$_{3}$ atmosphere during annealing allows temperatures up to 1323k and 1373 K, respectively, but above 1200 K a strong loss of Cd from the GaN has been observed. Annealing GaN together with elementary Al forms a protective layer on the GaN surface allowing annealing temperatures up to 1570 K for 10 min. (11 refs).

  16. Conductivity kinetics and conductivity levels of ion implanted poly(paraphenylene) pellets

    Energy Technology Data Exchange (ETDEWEB)

    Le Huee, C. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moreau, C. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moliton, A. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Guille, B. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Froyer, G. (Lab OCM, CNET, 22 Lannion (France))

    1993-04-19

    We have studied the kinetics of the dc conductivity [sigma][sub dc] of PPP pellets after ion implantation versus implantation parameters (size of ions, current density, fluence). The main process occurs during the vacuum - open air transition: the higher the implantation parameters are, the larger the [sigma][sub dc] decrease is. Finally, the conductivity level is all the higher as the implanted ion is heavy. (orig.)

  17. 4-rod RFQ linac for ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fujisawa, Hiroshi; Hamamoto, Nariaki; Inouchi, Yutaka [Nisshin Electric Co. Ltd., Kyoto (Japan)

    1997-03-01

    A 34 MHz 4-rod RFQ linac system has been upgraded in both its rf power efficiency and beam intensity. The linac is able to accelerate in cw operation 0.83 mA of a B{sup +} ion beam from 0.03 to 0.91 MeV with transmission of 61 %. The rf power fed to the RFQ is 29 kW. The unloaded Q-value of the RFQ has been improved approximately 61 % to 5400 by copper-plating stainless steel cooling pipes in the RFQ cavity. (author)

  18. Some features of ion mixing during simultaneous ion implantation and deposition of metallic coatings

    CERN Document Server

    Pogrebnyak, A D; Mikhalev, A D; Shablya, V T; Yanovskij, V P

    2001-01-01

    The results on the Ta, Cu ions implantation into the aluminium substrate by simultaneous deposition of these ions in the form of coatings are presented. The complex structure of these coatings from the given elements in the substrate, as well as the increase in the microhardness, adhesion and corrosion resistance growth are determined. It is shown on the basis of the results of the secondary ions energy distribution, that intermetallic phases are formed in the substrate surface layer

  19. Ion implantation, a method for fabricating light guides in polymers

    Science.gov (United States)

    Kulish, J. R.; Franke, H.; Singh, Amarjit; Lessard, Roger A.; Knystautas, Emile J.

    1988-04-01

    Li+ and N+ ions were implanted into aliphatic polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), and aromatic polyimide (PI) polycarbonate (PC) polymers in the energy range of 100-130 keV. Planar optical waveguides guiding between one and three modes were formed. For low implantation doses (≤ 1014 ions/cm2), total waveguide loss values at λ=633 nm were found to be less than 2 dB/cm. The changes in the refractive index were found to be very large (Δn≥0.05) in the case of PMMA and PVA. We interpret this change in refractive index as being due to the formation of aromatic compounds in the regions of electronic scattering.

  20. The enhanced anticoagulation for graphene induced by COOH(+) ion implantation.

    Science.gov (United States)

    Liu, Xiaoqi; Cao, Ye; Zhao, Mengli; Deng, Jianhua; Li, Xifei; Li, Dejun

    2015-01-01

    Graphene may have attractive properties for some biomedical applications, but its potential adverse biological effects, in particular, possible modulation when it comes in contact with blood, require further investigation. Little is known about the influence of exposure to COOH(+)-implanted graphene (COOH(+)/graphene) interacting with red blood cells and platelets. In this paper, COOH(+)/graphene was prepared by modified Hummers' method and implanted by COOH(+) ions. The structure and surface chemical and physical properties of COOH(+)/graphene were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and contact angle measurement. Systematic evaluation of anticoagulation, including in vitro platelet adhesion assays and hemolytic assays, proved that COOH(+)/graphene has significant anticoagulation. In addition, at the dose of 5 × 10(17) ions/cm(2), COOH(+)/graphene responded best on platelet adhesion, aggregation, and platelet activation.

  1. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    CERN Document Server

    Chen, ChienHsu; Jian, Hui-Shan; Niu, H

    2016-01-01

    Here we present a simple physical method to produce magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are distributed inside the NDs without affecting their crystal structure. So the NDs can be still functionalized through surface modification for targeted chemotherapy and the added magnetic property will make the NDs suitable for localized thermal treatment for cancer cells without the toxicity from the Fe atoms being directly in contact with the living tissue.

  2. Highly antibacterial UHMWPE surfaces by implantation of titanium ions

    Energy Technology Data Exchange (ETDEWEB)

    Delle Side, D., E-mail: domenico.delleside@le.infn.it [LEAS, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento, Lecce (Italy); Istituto Nazionale di Fisica Nucleare – Sezione di Lecce, Lecce (Italy); Nassisi, V.; Giuffreda, E.; Velardi, L. [LEAS, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento, Lecce (Italy); Istituto Nazionale di Fisica Nucleare – Sezione di Lecce, Lecce (Italy); Alifano, P.; Talà, A.; Tredici, S.M. [Dipartimento di Scienze e Tecnologie Biologiche ed Ambientali, Università del Salento, Lecce (Italy)

    2014-07-15

    The spreading of pathogens represents a serious threat for human beings. Consequently, efficient antimicrobial surfaces are needed in order to reduce risks of contracting severe diseases. In this work we present the first evidences of a new technique to obtain a highly antibacterial Ultra High Molecular Weight Polyethylene (UHMWPE) based on a non-stoichiometric titanium oxide coating, visible-light responsive, obtained through ion implantation.

  3. Formation of Nanoscale Intermetallic Phases in Ni Surface Layer at High Intensity Implantation of Al Ions

    Institute of Scientific and Technical Information of China (English)

    I.A.Bozhko; S.V.Fortuna; I.A.Kurzina; I.B.Stepanov; E.V.Kozlov; Yu.P. Sharkeev

    2004-01-01

    The results of experimental study of nanoscale intermetallic formation in surface layer of a metal target at ion implantation are presented. To increase the thickness of the ion implanted surface layer the high intensive ion implantation is used. Compared with the ordinary ion implantation, the high intensive ion implantation allows a much thicker modified surface layer. Pure polycrystalline nickel was chosen as a target. Nickel samples were irradiated with Al ions on the vacuum-arc ion beam and plasma flow source "Raduga-5". It was shown that at the high intensity ion implantation the fine dispersed particles of Ni3Al, NiAl intermetallic compounds and solid solution Al in Ni are formed in the nickel surface layer of 200 nm and thicker. The formation of phases takes place in complete correspondence with the Ni-Al phase diagram.

  4. Electrical properties of oxygen ion-implanted InP

    Science.gov (United States)

    He, L.; Anderson, W. A.

    1992-10-01

    The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP ( n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.

  5. Ion beam system for implanting industrial products of various shapes

    Science.gov (United States)

    Denholm, A. S.; Wittkower, A. B.

    1985-01-01

    Implantation of metals and ceramics with ions of nitrogen and other species has improved surface properties such as friction, wear and corrosion in numerous industrial applications. Zymet has built a production machine to take advantage of this process which can implant a 2 × 10 17 ions/cm 2 dose of nitrogen ions into a 20 cm × 20 cm area in about 30 min using a 100 keV beam. Treatment is accomplished by mounting the product on a cooled, tiltable, turntable which rotates continuously, or is indexed in 15° steps to expose different surfaces in fixed position. Product cooling is accomplished by using a chilled eutectic metal to mount and grip the variously shaped objects. A high voltage supply capable of 10 mA at 100 kV is used, and the equipment is microcomputer controlled via serial light links. All important machine parameters are presented in sequenced displays on a CRT. Uniformity of treatment and accumulated dose are monitored by a Faraday cup system which provides the microprocessor with data for display of time to completion on the process screen. For routine implants the operator requires only two buttons; one for chamber vacuum control, and the other for process start and stop.

  6. The effect of ion implantation on cellular adhesion.

    Science.gov (United States)

    Howlett, C R; Evans, M D; Wildish, K L; Kelly, J C; Fisher, L R; Francis, G W; Best, D J

    1993-01-01

    As there are only a finite number of materials suitable for orthopaedic reconstruction, considerable effort has been devoted recently to investigating ways of altering the surface chemistry of prosthetic materials without altering their bulk properties. Ion beam implantation is one such technique which is appropriate for orthopaedic reconstructive materials. This paper investigates the early effect of ion beam modification on cellular attachment of bone derived cells using a prototype device which measures the strength of attachment of individual cells to a silicon substratum. The results point to several conclusions. (1) There is no evidence that ion beam implantation with nitrogen, phosphorus, manganese or magnesium produces increased adhesion of human bone derived cells. (2) Surface etching with hydrofluoric acid, electron bombardment and thermal oxidation increases the strength of attachment between cells and substrata. (3) There is a correlation between wettability and rate of cellular attachment to oxygen implanted substrata during the first 2 h after cellular seeding. However, the increase in cellular attachment cannot be entirely explained by the change in critical surface tension or via increased fibronectin attachment to the substrata.

  7. Preparation of tungsten carbide nanoparticles by ion implantation and electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Kato, S. [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Yamaki, T., E-mail: yamaki.tetsuya@jaea.go.jp [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Yamamoto, S.; Hakoda, T. [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawaguchi, K. [Department of Chemistry and Materials Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Kobayashi, T. [RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 350-0198 (Japan); Suzuki, A.; Terai, T. [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-11-01

    Glassy carbon (GC) substrates were implanted with 100 keV tungsten ions at retained fluences of 4 × 10{sup 16} and 6 × 10{sup 16} ions/cm{sup 2} and surface-etched electrochemically in order to prepare tungsten-carbide (WC) nanoparticles on their topmost layers. The calculated current efficiency for the electrochemical etching was nearly the same for the two samples implanted at different fluences, suggesting the controllability of the etched depth using the consumed electric charge. The etching front reached the buried tungsten-implanted layer and increased the tungsten concentration at the surface. No oxidation of WC was observed, even under anodic potential application during electrochemical etching. The voltammogram response of the topmost nanoparticle layer was too small to be observed, probably due to the limited activity of the WC itself and the remaining low concentration. It was demonstrated that this technique could, in principle, be applied to various types of nanoparticle catalysts implanted in GC substrates.

  8. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    Science.gov (United States)

    Xu, Juan; Ding, Gang; Li, Jinlu; Yang, Shenhui; Fang, Bisong; Sun, Hongchen; Zhou, Yanmin

    2010-10-01

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased ( p S. mutans, a common bacterium in the oral environment.

  9. Characterization and simulation studies on high tilt ion implantation for precision halo implant applications

    Energy Technology Data Exchange (ETDEWEB)

    Guo, B.N. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)]. E-mail: baonian.guo@vsea.com; Zhao, Z.Y. [Spansion LLC, 5204 E. Ben White Blvd., Austin, TX 78741 (United States); Falk, S. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Liu, J. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Shim, K.H. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Jeong, U. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Mehta, S. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)

    2007-08-15

    Precision dopant placement at high tilt angles for halo applications is required in the fabrication of advanced devices to achieve better transistor characteristics, such as suppression of short channel effects, V {sub t} control and drive current. However, monitoring high tilt implants is not popular in semiconductor fabs, even though most have started monitoring zero-tilt implants in the recent couple of years. In this paper, the authors explore the possibilities of using high tilt angles with higher Miller Index channels. As an example, axial channeling along the <1 1 2> direction is used to evaluate the angle control performance of the VIISta 810EHP medium current ion implanter. Crystal-TRIM (a Monte Carlo simulation code) calculations are compared with experimental SIMS (Secondary Ion Mass Spectrometry) profiles. In addition, the effects of wafer orientation on the platen and wafer mis-cut on the dopant profiles are discussed. Metrology characterization, such as ThermaWave{sup TM} and SIMS, of the <1 1 2> ion channeling is presented.

  10. Morphology Control and Optical Absorption Properties of Ag Nanoparticles by Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    G.X. Cai; F. Ren; X.H. Xiao; L.X. Fan; X.D. Zhou; C.Z. Jiang

    2009-01-01

    Ion implantation is a powerful method for fabricating nanoparticles in dielectric. For the actual application of nanoparticle composites, a careful control of nanoparticles has to be achieved. In this letter, the size, distribution and morphology of Ag nanoparticles are controlled by controlling the ion current density, ion implantation sequence and ion irradiation dose. Single layer Ag nanoparticles are formed by Ag~+ ion implantation at current density of 2.5 μA/cm~2. By Ag and Cu ions sequential implantation, the size of single layer Ag nanoparticles increases. While, by Cu and Ag ions sequential implantation, uniform Ag nanoparticles with wide distribution are formed. The morphology of Ag nanoparticles changes to hollow and sandwiched nanoparticles by Cu~+ ion irradiation to doses of 3×10~(16) and 5×10~(16) ions/cm~2. The optical absorption properties of Ag nanoparticles are also tailored by these ways.

  11. Bimodal distribution of damage morphology generated by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A nucleation and evolution model of damage based on amorphous pockets (APs) has recently been developed and implemented in an atomistic kinetic Monte Carlo simulator. In the model, APs are disordered structures (I {sub n}V {sub m}), which are agglomerates of interstitials (I) and vacancies (V). This model has been used to study the composition and size distribution of APs during different ion implantations. Depending strongly on the dose rate, ion mass and implant temperature, the APs can evolve to a defect population where the agglomerates have a similar number of I and V (n {approx} m), or to a defect population with pure I (m {approx} 0) and pure V (n {approx} 0) clusters, or a mixture of APs and clusters. This behaviour corresponds to a bimodal (APs/clusters) distribution of damage. As the AP have different thermal stability compared to the I and V clusters, the same damage concentration obtained through different implant conditions has a different damage morphology and, consequently, exhibit a different resistance to subsequent thermal treatments.

  12. Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

    Directory of Open Access Journals (Sweden)

    David W. Berzins

    2012-07-01

    Full Text Available Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed to create the coatings, but detailed structural analysis of the coatings is generally lacking in the dental literature. Depending on application, the purpose of the coating is to provide increased surface hardness, abrasion/wear resistance, esthetics, and corrosion resistance, lower friction, as well as greater beneficial interaction with adjacent biological and material substrates. While many studies have reported on the achievement of these properties, a consensus is not always clear. Additionally, few studies have been conducted to assess the efficacy of the coatings in a clinical setting. Overall, titanium nitride and/or nitrogen ion implanted coated dental materials potentially offer advantages over uncoated counterparts, but more investigation is needed to document the structure of the coatings and their clinical effectiveness.

  13. Droplet-free high-density metal ion source for plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Keiji [Department of Electrical Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501 (Japan)]. E-mail: nakamura@solan.chubu.ac.jp; Yoshinaga, Hiroaki [Department of Electrical Engineering, Doshisha University, 1-3 Tatara Miyakodani, Kyotanabe, Kyoto 610-0321 (Japan); Yukimura, Ken [Department of Electrical Engineering, Doshisha University, 1-3 Tatara Miyakodani, Kyotanabe, Kyoto 610-0321 (Japan)

    2006-01-15

    This paper reports on plasma parameters and ion composition of droplet-free Zr ion source for plasma immersion ion implantation and deposition (PIII and D). Zirconium (Zr) ions were obtained by ionizing sputtered Zr atoms in inductively-coupled argon discharge. The characteristics of plasma density, plasma potential and electron temperature were typical ones of such a inductive discharge, and the plasma parameters were not significantly influenced by mixing the sputtered Zr atoms into the plasma. Actually, the main ionic component was still Ar{sup +} ions, and the ion density ratio of [Zr{sup +}]/[Ar{sup +}] was as low as {approx}8%. Increase in sputtering rate of the Zr source will be necessary to improve the ion density ratio.

  14. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaev, A.G., E-mail: nik@opee.hcei.tsc.ru [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Yushkov, G.Yu.; Oks, E.M. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Oztarhan, A. [Izmir University, Izmir 35140 (Turkey); Akpek, A.; Hames-Kocabas, E.; Urkac, E.S. [Bioengineering Department, Ege University, Bornova 35100, Izmir (Turkey); Brown, I.G. [Lawrence Berkeley National Laboratory, Berkeley, CA 94708 (United States)

    2014-08-15

    Highlights: • Ion implantation. • Anti-bacterial properties. • Textile polymer. • Vacuum arc ion source. - Abstract: Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal–gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the “inverse” concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

  15. Compensation effects in C{sub 60} doped by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Trouillas, P.; Ratier, B.; Moliton, A. [LEPOFI, Faculte des Sciences, Limoges (France)

    1995-12-31

    We have studied electrical transport phenomena after ion implantation in sublimed C{sub 60} films. A n type doping exists with 30 KeV potassium ion irradiations and low fluences (D < 10{sup 15} ions/cm{sup 2}). However degradation effects have been noted. So we have tried to discriminate doping and damage effects. Studies about the compensation phenomenum have been performed in order to prove the chemical role of the potassium atoms. An electron transfer from the alkali metal is sure; but a strong competition exists between degradation and doping phenomena. Finally, the intact C{sub 60} molecules are the insulator barriers, K{sub 3}C{sub 60} and isolated carbon atoms are the conductor phase for an heterogeneous media model. (Author).

  16. Effect of plasma immersion ion implantation in TiNi implants on its interaction with animal subcutaneous tissues

    Science.gov (United States)

    Lotkov, Aleksandr I.; Kashin, Oleg A.; Kudryavtseva, Yuliya A.; Shishkova, Darya K.; Krukovskii, Konstantin V.; Kudryashov, Andrey N.

    2016-08-01

    Here we investigated in vivo interaction of Si-modified titanium nickelide (TiNi) samples with adjacent tissues in a rat subcutaneous implant model to assess the impact of the modification on the biocompatibility of the implant. Modification was performed by plasma immersion ion processing, which allows doping of different elements into surface layers of complex-shaped articles. The aim of modification was to reduce the level of toxic Ni ions on the implant surface for increasing biocompatibility. We identified a thin connective tissue capsule, endothelial cells, and capillary-like structures around the Si-modified implants both 30 and 90 days postimplantation. No signs of inflammation were found. In conclusion, modification of TiNi samples with Si ions increases biocompatibility of the implant.

  17. Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted $^{163}$Ho ions

    CERN Document Server

    Gastaldo, L; von Seggern, F; Porst, J P; Schäfer, S; Pies, C; Kempf, S; Wolf, T; Fleischmann, A; Enss, C; Herlert, A; Johnston, K

    2013-01-01

    For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of $^{163}$Ho using MMCs having the radioactive $^{163}$Ho ions implanted in the absorber. The implantation of $^{163}$Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. In addition an optimized detector design for future $^{163}$Ho experiments is presented.

  18. Antibacterial PVD coatings doped with silver by ion implantation

    Science.gov (United States)

    Osés, J.; Palacio, J. F.; Kulkarni, S.; Medrano, A.; García, J. A.; Rodríguez, R.

    2014-08-01

    The antibacterial effect of certain metal ions, like silver, has been exploited since antiquity. Obviously, the ways to employ the biocide activity of this element have evolved throughout time and it is currently used in a wide range of clinical applications. The work presented here reports the results of an investigation focused on combining the protective properties of PVD coatings with the biocide property of silver, applied by ion implantation. For this purpose, chromium nitride layers were doped with silver implanted at two different doses (5 × 1016 and 1 × 1017 ion/cm2) at 100 keV of energy and perpendicular incidence. Full characterization of the coatings was performed to determine its topographical and mechanical properties. The concentration profile of Ag was analyzed by GD-OES. The thickness of the layers, nano-hardness, roughness, wear resistance and coefficient of friction were measured. Finally, the anti-bacterial efficacy of the coatings was determined following the JIS Z-2801:2010 Standard. The results provide clear insights into the efficacy of silver for antibacterial purposes, as well as on its influence in the mechanical and tribological behaviour of the coatings matrix.

  19. Ion-beam characterization of He implanted into nuclear matrices

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D.; Thome, L. E-mail: thome@csnsm.in2p3.fr; Enescu, S.E.; Negoita, F.; Ionescu, P.; Stefan, I.; Gentils, A

    2004-06-01

    The behavior of helium produced by the disintegration of actinides is a very important issue in the management of radioactive waste arising from nuclear reactors. The experimental techniques generally used to determine He profiles, based on standard nuclear reaction analysis, are either time consuming or lacking in accuracy. Elastic recoil detection analysis (ERDA) with high-energy heavy ions offers the possibility to extract helium profiles in a simpler way. This paper presents results obtained in the case of spinel single crystals implanted with He ions at several fluences (2 x 10{sup 16} and 5 x 10{sup 16} cm{sup -2}), providing different He concentrations ({approx}2 and 5 at.%, respectively). Helium depth profiles were measured by ERDA using high-energy Cu ions, whereas the damage induced by implantation was analyzed by classical Rutherford backscattering and channeling (RBS/C). Good He profiles were recorded, even at the smallest fluence used. Moreover, the combination of ERDA and RBS/C allows one to correlate He profiles and damage distributions.

  20. NANOMECHANICAL AND CORROSION PROPERTIES OF ZK60 MAGNESIUM ALLOY IMPROVED BY GD ION IMPLANTATION

    OpenAIRE

    XUE WEI TAO; ZHANG ZHONG WANG; XIAO BO ZHANG; ZHI XIN BA; YA MEI WANG

    2014-01-01

    Gadolinium (Gd) ion implantation with doses from 2.5 × 1016 to 1 × 1017 ions/cm2 into ZK60 magnesium alloy was carried out to improve its surface properties. X-ray photoelectron spectroscopy (XPS), nanoindenter, electrochemical workstation and scanning electron microscope (SEM) were applied to analyze the chemical composition, nanomechanical properties and corrosion characteristics of the implanted layer. The results indicate that Gd ion implantation produces a hybrid-structure protective lay...

  1. Structure analysis of bimetallic Co-Au nanoparticles formed by sequential ion implantation

    Science.gov (United States)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Song, Shu-peng; chen, Hong; Zhang, Ke; Xiong, Zu-zhao; Ji, Ling-ling; Dai, Hou-mei; Wang, Deng-jing; Lu, Jian-duo; Wang, Ru-wu; Zheng, Li-rong

    2016-08-01

    Co-Au alloy Metallic nanoparticles (MNPs) are formed by sequential ion implantation of Co and Au into silica glass at room temperature. The ion ranges of Au ions implantation process have been displayed to show the ion distribution. We have used the atomic force microscopy (AFM) and transmission electron microscopy (TEM) to investigate the formation of bimetallic nanoparticles. The extended X-ray absorption fine structure (EXAFS) has been used to study the local structural information of bimetallic nanoparticles. With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Hence, three oscillations, respectively, Co-O, Co-Co and Co-Au coordination are determined.

  2. Detection of ion implanted patterns in silicon using STM

    Science.gov (United States)

    Kim, Hyun-Soo; Ramanayaka, A. N.; Dwyer, K. J.; Stewart, M. D., Jr.; Pomeroy, J. M.

    Ion implanted regions in silicon are scanned using STM to detect features which will facilitate in-situ overlay and alignment of STM hydrogen patterned nano-devices. STM hydrogen lithography is used to make atomically precise devices such as single electron transistors and single atom qubits. However, with currently available imaging techniques, we are limited to make devices on a single plane using STM lithography. In-situ detection of high local doping concentrations using STM will allow precise alignment between the multiple layers of buried nano-devices and metal electrodes.

  3. Ion Implantation in III-V Compound Semiconductors

    Science.gov (United States)

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  4. Surface modification of titanium and titanium alloys by ion implantation.

    Science.gov (United States)

    Rautray, Tapash R; Narayanan, R; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-05-01

    Titanium and titanium alloys are widely used in biomedical devices and components, especially as hard tissue replacements as well as in cardiac and cardiovascular applications, because of their desirable properties, such as relatively low modulus, good fatigue strength, formability, machinability, corrosion resistance, and biocompatibility. However, titanium and its alloys cannot meet all of the clinical requirements. Therefore, to improve the biological, chemical, and mechanical properties, surface modification is often performed. In view of this, the current review casts new light on surface modification of titanium and titanium alloys by ion beam implantation.

  5. Ion beam technology applications study. [ion impact, implantation, and surface finishing

    Science.gov (United States)

    Sellen, J. M., Jr.; Zafran, S.; Komatsu, G. K.

    1978-01-01

    Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

  6. The Structure of Sapphire Implanted with Carbon at Room Temperature and 1000° C

    Science.gov (United States)

    Alves, E.; Marques, C.; Safran, G.; McHargue, Carl J.

    2009-03-01

    Carbon was implanted into sapphire at various temperatures as part of a study of the different defect structures produced by a series of light ions. Implantations were made with 150 keV ions to fluences of 1×1016 and 1×1017ions/cm2 at room temperature (RT) and 1000° C. The defect structures were characterized using Rutherford backscattering-channeling (RBS-C) and transmission electron microscopy (TEM). The RBS-C spectra indicated low residual disorder for RT implantation at 1×1016 C+/cm2. The de-channeling approached the random value at 1×1017 C+/cm2 and the TEM examination revealed a buried amorphous layer containing embedded sapphire nanocrystals. Damaged layers containing planar defects generally aligned parallel to the surface surrounded this layer. The RBS-C spectra for the sample implanted at 1000° C with 1×1017C+/cm2 suggested a highly damaged but crystalline surface that was confirmed by TEM micrographs.

  7. SURFACE MODIFICATION OF TITANIUM FILMS WITH SODIUM ION IMPLANTATION: SURFACE PROPERTIES AND PROTEIN ADSORPTION

    Institute of Scientific and Technical Information of China (English)

    K. Y. Cai

    2007-01-01

    Sodium implanted titanium films with different ion doses were characterized to correlate their ion implantation parameters. Native titanium films and ion implanted titanium films were characterized with combined techniques of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and light microscopy (LM). The surface presented increased sodium concentration on treated titanium films with ion dose increasing, except for the group with the highest ion dose of 4× 1017 ions/cm2. XPS depth profiling displayed that sodium entered titanium film around 25-50 nm depth depending on its implantation ion dose. AFM characterization showed that sodium ion implantation treatment changed the surface morphology from a relatively smooth titanium film to rough surfaces corresponding to different implantation doses.After sodium implantation, implanted titanium films presented big particles with island structure morphology. The surface morphology and particle growth displayed the corresponding trend.Fibrinogen adsorption on these titanium films was performed to correlate with the surface properties of treated titanium films. The results show that protein adsorption on ion-implanted samples with dose of 2 × 1017 and 4 × 1017 are statistically higher (p < 0. 01) than samples treated with dose of 5×1016 and 1 ×1017, as well as the control samples.

  8. Carbon Multicharged Ion Generation from Laser Plasma

    Science.gov (United States)

    Balki, Oguzhan; Elsayed-Ali, Hani E.

    2014-10-01

    Multicharged ions (MCI) have potential uses in different areas such as microelectronics and medical physics. Carbon MCI therapy for cancer treatment is considered due to its localized energy delivery to hard-to-reach tumors at a minimal damage to surrounding tissues. We use a Q-switched Nd:YAG laser with 40 ns pulse width operated at 1064 nm to ablate a graphite target in ultrahigh vacuum. A time-of-flight energy analyzer followed by a Faraday cup is used to characterize the carbon MCI extracted from the laser plasma. The MCI charge state and energy distribution are obtained. With increase in the laser fluence, the ion charge states and ion energy are increased. Carbon MCI up to C+6 are observed along with carbon clusters. When an acceleration voltage is applied between the carbon target and a grounded mesh, ion extraction is observed to increase with the applied voltage. National Science Foundation.

  9. Research on Surface Modification of 96 Al2O3 by Ni Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-hong; SUN Zhi; ZHU Xin; WANG Zhen-zhong

    2006-01-01

    A matrix of 96 Al2O3 ceramics was implanted with Ni ion of different dosages and energies using a MEVVA implanter. Then metallic structures of copper were made on the implanted ceramics, by using selective electroless copper plating. In addition, the characteristics and microstructure of the implanted layer were studied by using the SEM, RBS and XPS. The results show that: 1) the implanted Ni exits as Ni0 , Ni2+, and Ni3+ in the surface of Al2O3 and metal Ni particles precipitate on ceramics during implantation; 2) the concentration of Ni submits to the Gauss distribution along the direction of implantation on the surface of Al2O3 and high Ni concentration on the surface can be obtained if the Ni is implanted with low energy and a high dosage and 3) Ni ion implantation can activate the surface of Al2O3 and induce electroless copper plating on the ceramics.

  10. Argon plasma immersion ion implantation of polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurin, A. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, New South Wales 2006 (Australia)], E-mail: kond@mailcity.com; Gan, B.K.; Bilek, M.M.M.; McKenzie, D.R.; Mizuno, K. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, New South Wales 2006 (Australia); Wuhrer, R. [Microstructural Analysis Unit, University of Technology Sydney, P.O. Box 123, Broadway, NSW 2007 (Australia)

    2008-04-15

    Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 x 10{sup 14}-2 x 10{sup 16} ions/cm{sup 2}, was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored.

  11. Phosphorous transient enhanced diffusion suppression and activation enhancement with cluster carbon co-implantation

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Yoshiki; Hamamoto, Nariaki; Nagayama, Tsutomu; Koga, Yuji; Umisedo, Sei; Kawamura, Yasunori; Hashimoto, Masahiro; Onoda, Hiroshi [Nissin Ion Equipment Co., Ltd., 575 Kuze Tonoshiro-cho, Minami-ku, Kyoto, 601-8205 (Japan)

    2012-11-06

    Carbon co-implantation is well known as an effective method for suppressing boron/phosphorous transient enhanced diffusion (TED). Germanium pre-amorphization implantation (PAI) is usually applied prior to carbon co-implantation for suppressing channeling tail of dopants. In this study, cluster carbon was applied instead of the combination of germanium PAI and monomer carbon co-implantation prior to phosphorous implantation. Dependence of phosphorous activation and TED on amorphous layer thickness, carbon dose, carbon distribution and substrate temperature have been investigated. Cluster carbon implantation enables thick amorphous layer formation and TED suppression at the same time and low temperature implantation enhances the ability of amorphous layer formation so that shallow junction and low Rs can be achieved without Ge implantation.

  12. XPS and micro-mechanical characterisation of nitrogen ion implanted low alloy steel

    Institute of Scientific and Technical Information of China (English)

    A.O.Olofinjana; Z.Chen; J.M.Bell

    2001-01-01

    The surface composition of low alloy steel after N2+ implantation was studied with X-rayphoto-electron spectroscopy (XPS). The effect of the implantation on the mechanical hardnesswas evaluated by ultra-micro hardness indentation. Chemical characterisation of the surface indi-cated that a thin layer rich in N, C and Si was formed. It is shown that Fe played little role in thechemical composition and the structure of the modified surface. The mechanical hardness of N2+implanted surface was 35-50 GPa compared with a value of 10 GPa for the untreated sample. Itis thought that the high hardness observed on the surface and in the sub-surface was as a resultof chemical modification to form a film of Si doped carbon nitride. There is strong evidence fromthe XPS and the nanoindentation studies that the bonding structure of the C-N in the near surfaceis essentially sp3 types expected in crystalline C3N4. The value of nitrogen ion implantation asprocess for improving the wear resistance of low alloy steels is emphasized.

  13. Etching and structure transformations in uncured epoxy resin under rf-plasma and plasma immersion ion implantation

    Science.gov (United States)

    Kondyurin, Alexey; Bilek, Marcela

    2010-05-01

    Uncured epoxy resin was spun onto silicon wafer and treated by plasma and plasma immersion ion implantation (PIII) by argon ions with energy up to 20 keV. Ellipsometry, FTIR spectroscopy and optical microscopy methods were used for analysis. The etching, carbonization, oxidation and crosslinking effects were observed. The curing reactions in modified epoxy resin are observed without a hardening agent. A model of structural transformations in epoxy resin under plasma and ion beam irradiation is proposed and discussed in relation to processes in a space environment.

  14. Industrial plasma immersion ion implanter and its applications

    CERN Document Server

    Tong Hong Hui; Huo Yan Feng; Wang Ke; Mu Li Lan; Feng Tie Min; Zhao Jun; Yan Bing; Geng Man

    2002-01-01

    A new generation industrial plasma immersion ion implanter was developed recently in South-western Institute of Physics and some experimental results are reported. The vacuum chamber with 900 mm in diameter and 1050 mm in height stands vertically. The pumping system includes turbo -pump and mechanical pump and it can be automatically controlled by PLC. The background pressure is less than 4 x 10 sup - sup 4 Pa. The plasma in the chamber can be generated by hot-filament discharge and three high-efficiency magnetic filter metal plasma sources, so that the plasma immersion ion implantation and enhanced deposition can be done. The maximum pulse voltage output is 80 kV, maximum pulse current is 60 A, repetition frequency is 50-500 Hz, and the pulse rise time is less than 2 mu s. The power modulator can operate in the pulse bunching mode if necessary. In general, the plasma density is 10 sup 8 -10 sup 1 sup 0 cm sup - sup 3 , the film deposition rate is 0.1-0.5 nm/s

  15. Comprehensive modeling of ion-implant amorphization in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing. 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A physically based model has been developed to simulate the ion-implant induced damage accumulation up to amorphization in silicon. Based on damage structures known as amorphous pockets (AP), which are three-dimensional, irregularly shaped agglomerates of interstitials (I) and vacancies (V) surrounded by crystalline silicon, the model is able to reproduce a wide range of experimental observations of damage accumulation and amorphization with interdependent implantation parameters. Instead of recrystallizing the I's and V's instantaneously, the recrystallization rate of an AP containing nI and mV is a function of its effective size, defined as min(n, m), irrespective of its internal spatial configuration. The parameters used in the model were calibrated using the experimental silicon amorphous-crystalline transition temperature as a function of dose rate for C, Si, and Ge. The model is able to show the superlinear damage build-up with dose, the extent of amorphous layer and the superadditivity effect of polyatomic ions.

  16. Sheath overlap during very large scale plasma source ion implantation

    Science.gov (United States)

    Cluggish, B. P.; Munson, C. P.

    1998-12-01

    Measurements of plasma source ion implantation have been performed on a large target of complex geometry. The target consists of 1000 aluminum, automotive piston surrogates mounted on four racks; total surface area is over 16 m2. The four racks are positioned parallel to each other, 0.25 m apart, in an 8 m3 vacuum chamber. The racks of pistons are immersed in a capacitive radio frequency plasma, with an argon gas pressure of 20-65 mPa. Langmuir probe measurements indicate that the plasma density profile is highly nonuniform, due to particle losses to the racks of pistons. The plasma ions are implanted into the pistons by pulse biasing the workpiece to negative voltages as low as -18 kV for up to 20 μs. During the voltage pulse, the high-voltage sheaths from adjacent racks of pistons converge towards each other. At plasma densities less than 109 cm-3 the sheaths are observed to overlap. Measurements of the sheath overlap time are compared with standard analytic theory and with simulations run with a two-dimensional particle-in-cell code.

  17. Ion-implantation and analysis for doped silicon slot waveguides

    Directory of Open Access Journals (Sweden)

    McCallum J. C.

    2012-10-01

    Full Text Available We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL and Rutherford backscattering spectrometry (RBS to analyse these structures. Slot waveguide structures in which light is confined to a nanometre-scale low-index region between two high-index regions potentially offer significant advantages for realisation of electrically-pumped Si devices with optical gain and possibly quantum optical devices. We are currently investigating an alternative pathway in which high quality thermal oxides are grown on silicon and ion implantation is used to introduce the Er and Si-ncs into the SiO2 layer. This approach provides considerable control over the Er and Si-nc concentrations and depth profiles which is important for exploring the available parameter space and developing optimised structures. RBS is well-suited to compositional analysis of these layered structures. To improve the depth sensitivity we have used a 1 MeV α beam and results indicate that a layered silicon-Er:SiO2/silicon structure has been fabricated as desired. In this paper structural results will be compared to Er photoluminescence profiles for samples processed under a range of conditions.

  18. Heavy ion time-of-flight ERDA of high dose metal implanted germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dytlewski, N.; Evans, P.J.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Wielunski, L.S. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics; Bunder, J. [New South Wales Univ., Wollongong, NSW (Australia). Wollongong Univ. Coll

    1996-12-31

    With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.

  19. Effect of disorder and defects in ion-implanted semiconductors electrical and physiochemical characterization

    CERN Document Server

    Willardson, Robert K; Christofides, Constantinos; Ghibaudo, Gerard

    2014-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.Electrical and Physicochemical Characterization focuses on the physics of the annealing kine

  20. A comparison of batch and single wafer high dose arsenic ion implantation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Irwin, R.B.; Filo, A.J.; Kannan, V.C.; Feygenson, A.; Prematta, R.J.

    1989-04-01

    High dose, low energy (4x10/sup 15/ cm/sup -2/ at 15 keV) arsenic ion implantation into silicon was performed in batch and single wafer mode using medium and high current ion implanters. An investigation of implanted and annealed samples by Rutherford backscattering (RBS), transmission electron microscopy (TEM), thermal wave technique, and sheet resistance mapping showed little to no difference of arsenic profiles and residual damage between batch and single wafer implantation conditions when the sample temperature during implantation was kept below 120/sup 0/C. (orig.).

  1. A comparison of batch and single wafer high dose arsenic ion implantation techniques

    Science.gov (United States)

    Irwin, R. B.; Filo, A. J.; Kannan, V. C.; Feygenson, A.; Prematta, R. J.

    1989-04-01

    High dose, low energy (4×10 15 cm -2 at 15 keV) arsenic ion implantation into silicon was performed in batch and single wafer mode using medium and high current ion implanters. An investigation of implanted and annealed samples by Rutherford backscattering (RBS), transmission electron microscopy (TEM), thermal wave technique, and sheet resistance mapping showed little to no difference of arsenic profiles and residual damage between batch and single wafer implantation conditions when the sample temperature during implantation was kept below 120° C.

  2. Metal-ion release from titanium and TiN coated implants in rat bone

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, F. (Dipt. di Meccanica Strutturale, Univ. degli Studi di Trento (Italy)); Miotello, A. (Dipt. di Fisica, Univ. degli Studi di Trento (Italy)); Pavloski, L. (CSM, Trento (Italy)); Galvanetto, E. (Dipt. di Meccanica Strutturale, Univ. degli Studi di Trento (Italy)); Moschini, G. (INFN-Lab. Nazionali di Legnaro, Padova (Italy)); Galassini, S. (INFN-Lab. Nazionali di Legnaro, Padova (Italy)); Passi, P. (Dental School, Univ. of Padua (Italy)); Bogdanovic, S. (R. Boskovic Inst., Zagreb (Croatia)); Fazinic, S. (R. Boskovic Inst., Zagreb (Croatia)); Jaksic, M. (R. Boskovic Inst., Zagreb (Croatia)); Valkovic, V. (R. Boskovic Inst., Zagreb (Croatia) IAEA Seibersdorf Labs., Wien (Austria))

    1993-06-01

    Titanium is a good material for dental and orthopaedic implants, but many authors reported that it releases ions into the surrounding tissues and into the serum. Titanium nitride has good mechanical properties and chemical inertless and may be employed as an implant coating material. In this experiment, pure titanium and SiO[sub 2] coated with TiN implants were inserted in the tibia of rats. After thirty days, the bones were taken and examined by a proton microprobe. TiN-coated implants showed a lower ion release into the bone compared with pure titanium. This suggests that TiN may be a good coating for endosseous implants. (orig.)

  3. Lithium Nitride Synthesized by in situ Lithium Deposition and Ion Implantation for Boron Neutron Capture Therapy

    Science.gov (United States)

    Ishitama, Shintaro; Baba, Yuji; Fujii, Ryo; Nakamura, Masaru; Imahori, Yoshio

    Li3N synthesis on Li deposition layer was conducted without H2O and O2 by in situ lithium deposition in high vacuum chamber of 10-6 Pa and ion implantation techniques and the thermo-chemical stability of the Li3N/Li/Cu tri-layered target for Boron Neutron Capture Therapy (BNCT) under laser heating and air exposure was characterized by X-ray photoelectron spectroscopy (XPS). Following conclusions were derived; (1) Li3N/Li/Cu tri-layered target with very low oxide and carbon contamination was synthesized by in situ lithium vacuum deposition and N2+ ion implantation without H2O and O2 additions, (2) The starting temperature of evaporation of Li3N/Li/Cu tri-layered target increased by 120K compared to that of the Li/Cu target and (3) Remarkable oxidation and carbon contamination were observed on the surface of Li3N/Li/Cu after air exposure and these contaminated compositions was not removed by Ar+ heavy sputtering.

  4. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    Science.gov (United States)

    Nikolaev, A. G.; Yushkov, G. Yu.; Oks, E. M.; Oztarhan, A.; Akpek, A.; Hames-Kocabas, E.; Urkac, E. S.; Brown, I. G.

    2014-08-01

    Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal-gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the "inverse" concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

  5. Structure analysis of bimetallic Co–Au nanoparticles formed by sequential ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hua-jian [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Wang, Yu-hua, E-mail: wangyuhua@wust.edu.cn [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zhang, Xiao-jian [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Song, Shu-peng [State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Chen, Hong; Zhang, Ke; Xiong, Zu-zhao; Ji, Ling-ling; Dai, Hou-mei; Wang, Deng-jing; Lu, Jian-duo; Wang, Ru-wu [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zheng, Li-rong [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2016-08-15

    Highlights: • Co–Au alloy Metallic nanoparticles (MNPs) are formed by ion implantation in silica glass. • The ion ranges of Au ions implantation process have been displayed to show the ion distribution. • EXAFS, AFM and TEM have been used to study the local structural information of imetallic nanoparticles. • With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Three oscillations are determined. - Abstract: Co–Au alloy Metallic nanoparticles (MNPs) are formed by sequential ion implantation of Co and Au into silica glass at room temperature. The ion ranges of Au ions implantation process have been displayed to show the ion distribution. We have used the atomic force microscopy (AFM) and transmission electron microscopy (TEM) to investigate the formation of bimetallic nanoparticles. The extended X-ray absorption fine structure (EXAFS) has been used to study the local structural information of bimetallic nanoparticles. With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Hence, three oscillations, respectively, Co–O, Co–Co and Co–Au coordination are determined.

  6. Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires.

    Science.gov (United States)

    Fukata, Naoki; Takiguchi, Ryo; Ishida, Shinya; Yokono, Shigeki; Hishita, Shunichi; Murakami, Kouichi

    2012-04-24

    Recrystallization of silicon nanowires (SiNWs) after ion implantation strongly depends on the ion doses and species. Full amorphization by high-dose implantation induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs.

  7. The third generation multi-purpose plasma immersion ion implanter for surface modification of materials

    CERN Document Server

    Tang Bao Yin; Wang Xiao Feng; Gan Kong Yin; Wang Song Yan; Chu, P K; Huang Nian Ning; Sun Hong

    2002-01-01

    The third generation multi-purpose plasma immersion ion implantation (PIII) equipment has been successfully used for research and development of surface modification of biomedical materials, metals and their alloys in the Southwest Jiaotong University. The implanter equipped with intense current, pulsed cathodic arc metal plasma sources which have both strong coating function and gas and metal ion implantation function. Its pulse high voltage power supply can provide big output current. It can acquire very good implantation dose uniformity. The equipment can both perform ion implantation and combine ion implantation with sputtering deposition and coating to form many kinds of synthetic surface modification techniques. The main design principles, features of important components and achievement of research works in recent time have been described

  8. Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4× 1018 ions. cm-2. Using the Plasma Source Ion Implantation (PSⅡ) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

  9. Dose-time relation in BF3 plasma immersion ion implantation

    Science.gov (United States)

    Shao, Jiqun; Round, Mark; Qin, Shu; Chan, Chung

    1995-03-01

    Etching and deposition rates of silicon and SiO2 during BF3 plasma immersion ion implantation are measured. The relation between total dose and plasma immersion ion implantation processing time is developed through computer modeling. The results are in very good agreement with the experimental data. Comparison with a previously published model is also given.

  10. Effect of Sequential Ions Implantation on Structure of Cu, Ag Nanoparticles

    Institute of Scientific and Technical Information of China (English)

    XIAO Xiang-heng; LU Zhuo-yu; GUO Li-ping; REN Feng; CHEN Dong-liang; WU Zi-yu; JIA Quan-jie

    2007-01-01

    The preparation of metal nanoparticles composites by Cu, Ag ions sequential implantation is studied. The formation of Cu, Ag nanoparticles has been evidenced by grazing incidence X-ray diffraction, extended x-ray absorption fine structure and transmission electron microscopy. With the increase of Ag ion implantation dose, the size and density of Ag nanoparticles increase significantly.

  11. Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Beom-Su; Kim, Jin Seong [Wonkwang Bone Regeneration Research Institute, Wonkwang University, Iksan 570-749 (Korea, Republic of); Bonecell Biotech Inc., 77, Dunsan-ro, Seo-gu, Daejeon 302-830 (Korea, Republic of); Park, Young Min [DIO Corporation, 66, Centum seo-ro, Haeundae-gu, Busan (Korea, Republic of); Choi, Bo-Young [Department of Oral and maxillofacial Surgery, Wonkwang University Daejeon Dental Hospital, Daejeon 302-830 (Korea, Republic of); Lee, Jun, E-mail: omslee@wku.ac.kr [Wonkwang Bone Regeneration Research Institute, Wonkwang University, Iksan 570-749 (Korea, Republic of); Bonecell Biotech Inc., 77, Dunsan-ro, Seo-gu, Daejeon 302-830 (Korea, Republic of)

    2013-04-01

    Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3 × 10{sup 16} ions/cm{sup 2} was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity. - Highlights: ► Mg ion was coated onto surface of SLA treated titanium via vacuum arc source ion implantation method. ► The morphological characteristics did not change after Mg ion implantation. ► Mg ion implanted SLA Ti is highly cytocompatible. ► Initial cell adhesion of MSCs is improved by Mg ion implantation. ► Mg ion implantation

  12. Effect of Yttrium Pre-Implantation on Implantation Behavior of Ti-6Al-4V Alloy in Nitrogen Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to increase the peak depth of nitrogen atoms during the nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy, the rare earth metal yttrium was applied. In the experiment, yttrium and nitrogen ions were implanted under the voltage of 20 and 30 kV, respectively. In the samples with yttrium pre-implantation for 30 min, the Auger electron spectroscopy(AES) analysis shows that the peak depth of the nitrogen atoms increases from 50 up to 100 nm. It can also be seen from the tribological tests that the wear resistance of these samples is increased remarkably.

  13. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kuhudzai, R.J., E-mail: joeykuhu@yahoo.com [Physics Department, University of Pretoria, Pretoria (South Africa); Berg, N.G. van der; Malherbe, J.B.; Hlatshwayo, T.T.; Theron, C.C. [Physics Department, University of Pretoria, Pretoria (South Africa); Buys, A.V.; Botha, A.J. [Laboratory for Microscopy and Microanalysis, University of Pretoria (South Africa); Wendler, E.; Wesch, W. [Institut Für Festköperphysik, Friedrich-Schiller-Universität Jena, Jena (Germany)

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 10{sup 16} cm{sup −2}. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and

  14. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

    Directory of Open Access Journals (Sweden)

    Jeffrey C. McCallum

    2012-01-01

    Full Text Available Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

  15. Synthesis and characterisation of ion-implanted epoxy composites for X-ray shielding

    Energy Technology Data Exchange (ETDEWEB)

    Noor Azman, N.Z. [Department of Imaging and Applied Physics, Faculty of Science and Engineering, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia); School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Siddiqui, S.A. [Department of Imaging and Applied Physics, Faculty of Science and Engineering, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia); Ionescu, M. [Australian Nuclear Science and Technology Organisation (ANSTO), Lucas Heights, NSW 2234 (Australia); Low, I.M., E-mail: j.low@curtin.edu.au [Department of Imaging and Applied Physics, Faculty of Science and Engineering, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia)

    2012-09-15

    The epoxy samples were implanted with heavy ions such as tungsten (W), gold (Au) and lead (Pb) to investigate the attenuation characteristics of these composites. Near-surface composition depth profiling of ion-implanted epoxy systems was studied using Rutherford Backscattering Spectroscopy (RBS). The effect of implanted ions on the X-ray attenuation was studied with a general diagnostic X-ray machine with X-ray tube voltages from 40 to 100 kV at constant exposure 10 mAs. Results show that the threshold of implanted ions above which X-ray mass attenuation coefficient, {mu}{sub m} of the ion-implanted epoxy composite is distinguishably higher than the {mu}{sub m} of the pure epoxy sample is different for W, Au and Pb.

  16. Comparison of Wear Resistance Mechanisms of Die Steel Implanted with C and mo Ions

    Science.gov (United States)

    Cheng, M. F.; Yang, J. H.; Luo, X. D.; Zhang, T. H.

    Mo and C ions extracted from a metal vapor vacuum arc ion source were implanted into the surface of die steel (H13) to compare the wear resistance mechanisms of the implanted samples, respectively. The concentration depth profiles of implanted ions were measured using Rutherford backscattering spectroscopy and calculated by a code called TRIDYN. The structures of the implanted steel were observed by X-ray photoelectron spectroscopy and grazing-angle X-ray diffraction, respectively. It was found that the conventional heat-treated H13 steel could not be further hardened by the subsequent implanted C ions, and the thickness of the implanted layer was not an important factor for the Mo and C ion implantation to improve the wear resistance of the H13 steel. Mo ion implantation could obviously improve the wear resistance of the steel at an extraction voltage of 48 kV and a dose of 5 × 1017cm-2 due to formation of a modification layer of little oxidation with Mo2C in the implanted surface.

  17. Effect of calcium-ion implantation on the corrosion resistance and biocompatibility of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Bilińiski, A; Lewandowska-Szumieł, M D; Rajchel, B

    2001-08-01

    This work presents data on the structure and corrosion resistance of titanium after calcium-ion implantation with a dose of 10(17) Ca+/cm2. The ion energy was 25 keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the surface layer was examined by XPS and SIMS. The corrosion resistance was examined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. Biocompatibility tests in vitro were performed in a culture of human derived bone cells (HDBC) in direct contact with the materials tested. Both, the viability of the cells determined by an XTT assay and activity of the cells evaluated by alkaline phosphatase activity measurements in contact with implanted and non-implanted titanium samples were detected. The morphology of the cells spread on the surface of the materials examined was also observed. The results confirmed the biocompatibility of both calcium-ion-implanted and non-implanted titanium under the conditions of the experiment. As shown by TEM results, the surface layer formed during calcium-ion implantation was amorphous. The results of electrochemical examinations indicate that calcium-ion implantation increases the corrosion resistance, but only under stationary conditions; during anodic polarization the calcium-ion-implanted samples undergo pitting corrosion. The breakdown potential is high (2.7-3 V).

  18. Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Christoph D.

    2011-10-04

    Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

  19. Mechanical Design of Carbon Ion Optics

    Science.gov (United States)

    Haag, Thomas

    2005-01-01

    Carbon Ion Optics are expected to provide much longer thruster life due to their resistance to sputter erosion. There are a number of different forms of carbon that have been used for fabricating ion thruster optics. The mechanical behavior of carbon is much different than that of most metals, and poses unique design challenges. In order to minimize mission risk, the behavior of carbon must be well understood, and components designed within material limitations. Thermal expansion of the thruster structure must be compatible with thermal expansion of the carbon ion optics. Specially designed interfaces may be needed so that grid gap and aperture alignment are not adversely affected by dissimilar material properties within the thruster. The assembled thruster must be robust and tolerant of launch vibration. The following paper lists some of the characteristics of various carbon materials. Several past ion optics designs are discussed, identifying strengths and weaknesses. Electrostatics and material science are not emphasized so much as the mechanical behavior and integration of grid electrodes into an ion thruster.

  20. Dry Machining Tool Design via Chlorine Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    Tatsuhiko Aizawa; Atsushi Mitsuo; Shigeo Yamamoto; Shinji Muraishi; Taro Sumitomo

    2004-01-01

    Dry machining has become a key issue to significantly reduce the wastes of used lubricants and cleaning agents and to improve the environmental consciousness for medical and food applications of special tooling. Since the tools and metallic works are in direct contact in dry, severe adhesive wear and oxidation are thought to occur even at the presence of hard protective coatings. Self-lubrication mechanism with use of lubricous oxide films is found to be effective for dry machining. Through the chlorine ion implantation to tools, titanium base oxides are in-situ formed on the tool surface.This oxide deforms elasto-plastically so that both friction coefficient and wear volume are reduced even in the high-speed cutting.

  1. Dry Machining Tool Design via Chlorine Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    TatsuhikoAizawa; AtsushiMitsuo; ShigeoYamamoto; ShinjiMuraishi; TaroSumitomo

    2004-01-01

    Dry machining has become a key issue to significantly reduce the wastes of used lubricants and cleaning agents and to improve the environmental consciousness for medical and food applications of special tooling. Since the tools and metallic works are in direct contact in dry, severe adhesive wear and oxidation are thought to occur even at the presence of hard protective coatings. Self-lubrication mechanism with use of lubricous oxide films is found to be effective for dry machining. Through the chlorine ion implantation to tools, titanium base oxides are in-situ formed on the tool surface. This oxide deforms elasto-plastically so that both friction coefficient and wear volume are reduced even in the high-speed cutting.

  2. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  3. Study on the Properties of TiN Coatings on Previously Ion-Implanted Pure Magnesium Surface by MEVVA Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    ZHOU Hai; CHEN Fei; WANG Jian-ping

    2007-01-01

    A metal vapor vacuum arc (MEVVA) is used in ion implantation for substrate preparation before the deposition process which would ensure the improvement of mechanical properties of the coating.Ti ion is implanted into pure magnesium surface by MEVVA implanter operated with a modified cathode.Implanting energy is kept at 45 keV and dose is set at 3×1017 cm-2.TiN coatings are deposited by magnetically filtered vacuum-arc plasma source on unimplanted and previously implanted substrates.Microstructure and phase composition are analysed using scanning electron microscopy (SEM) and X-ray diffraction (XRD).The property of corrosion resistance of TiN coatings was studied by CS300P electrochemistry-corrosion workstation,and the main impact factor of the corrosion resistance was also analyzed.

  4. 21 CFR 878.3500 - Polytetrafluoroethylene with carbon fibers composite implant material.

    Science.gov (United States)

    2010-04-01

    ... composite implant material. 878.3500 Section 878.3500 Food and Drugs FOOD AND DRUG ADMINISTRATION... Prosthetic Devices § 878.3500 Polytetrafluoroethylene with carbon fibers composite implant material. (a) Identification. A polytetrafluoroethylene with carbon fibers composite implant material is a porous...

  5. A simple ion implanter for material modifications in agriculture and gemmology

    Science.gov (United States)

    Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

    2015-12-01

    In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

  6. A simple ion implanter for material modifications in agriculture and gemmology

    Energy Technology Data Exchange (ETDEWEB)

    Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Intarasiri, S. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Phanchaisri, B.; Techarung, J. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Rhodes, M.W.; Suwankosum, R.; Rattanarin, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2015-12-15

    In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X–Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

  7. CoCrMo alloy for orthopedic implant application enhanced corrosion and tribocorrosion properties by nitrogen ion implantation

    Science.gov (United States)

    Guo, Zijian; Pang, Xiaolu; Yan, Yu; Gao, Kewei; Volinsky, Alex A.; Zhang, Tong-Yi

    2015-08-01

    CoCrMo alloy corrosion and tribocorrosion properties are crucial for orthopedic implant application. These properties have been enhanced by implanting nitrogen ions with 100 keV energy. The corrosion current density of the implanted alloy is reduced by an order of magnitude, compared with the original alloy without implantation. In the tribocorrosion tests, the potential of the implanted alloy remain almost unchanged at around 0.05 V versus Ag/AgCl, while the potential of the original alloy without implantation changes from -0.4 to -0.6 and then to about -0.5 V versus Ag/AgCl, showing typical tribocorrosion behavior. Tribocorrosion tests also show that the 4 × 1017 N+/cm2 implantation reduces the friction coefficient from 0.35 to 0.15. Various characterization results indicate that the implantation induces a novel composite microstructure of the nanocrystalline CrN embedded inside amorphous CoCrMo matrix in the implanted layer, which enhances hardness, corrosion and tribocorrosion properties.

  8. Cell adhesion of F{sup +} ion implantation of intraocular lens

    Energy Technology Data Exchange (ETDEWEB)

    Li, D.J. E-mail: dejunli@hotmail.com; Cui, F.Z.; Gu, H.Q

    1999-04-01

    The cell adhesion of ion implanted polymethylmethacrylate (PMMA) intraocular lens was studied using cultured cells in vitro. F{sup +} ion implantation was performed at the energies of 40, 60, 80, 100 keV with the fluences ranging from 5x10{sup 13} to 1x10{sup 15} ions/cm{sup 2} at room temperature. The cell adhesion tests gave interesting results that the number of the neutral granulocytes and the macrophages adhering on surface were reduced significantly after ion implantation. The optimal fluence was about 4x10{sup 14} ions/cm{sup 2}. The hydrophobicity imparted to the lens surface was also enhanced. The results of X-ray photoelectron spectroscopy analysis indicated that ion implantation resulted in the cleavage of some pendant groups, the oxidation of the surface, and the formation of some new chemical bonds, which was probably the main reason for the cell adhesion change.

  9. Transferring gfp gene with ion implantation and transient expression of gfp in liliaceous pollen cells

    Institute of Scientific and Technical Information of China (English)

    YUAN Shibin; CHEN Qizhong; WANG Yugang; ZHAO Weijiang; XU An; YANG Gen; WANG Wenxian; WU Lijun

    2004-01-01

    Liliaceous pollen cells were implanted by 4.0 MeV C2+ ion beam or by 25.0 keV N+ ion beam. Laser confocal scanning microscopy (LCSM) of the implanted intact samples showed that parts of the implanted pollen cells could be stained by propidium iodide (PI). This indicated that energetic ion beam could directly act on cells beneath the pollen coats and made channels for entry of the molecules from outside of the cells. LCSM analysis of green fluorescent protein (GFP) showed that energetic ion beam could mediate transient expression of gfp in treated pollen cells. Compared with 25.0 keV N+ ion beam, implantation of 4.0 MeV C2+ ion beam greatly improved gene transfer efficiency in pollen cells.

  10. N and Cr ion implantation of natural ruby surfaces and their characterization

    Science.gov (United States)

    Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan; Magudapathy, P.; Panigrahi, B. K.; Nayak, B. B.; Mishra, B. K.

    2016-04-01

    Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV-Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 1017 N-ions/cm2 fluence, formation of colour centres (F+, F2, F2+ and F22+) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

  11. Investigation on the Tribology of Co Implanted Stainless Steel Using Metal Vapor Vacuum Arc Ion Source

    Institute of Scientific and Technical Information of China (English)

    Junxia GUO; Xun CAI; Qiulong CHEN

    2004-01-01

    AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steel was investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ion source with an extraction voltage of 40 kV, implantation doses of 3×1017/cm2 and 5×1017/cm2, and ion current densities of 13, 22 and 32 μA/cm2. The results showed that the near-surface hardness of Co-implanted stainless steel sample was increased by 50% or more, and it increased with increasing ion current density at first and then declined. The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantation reduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasing ion current density and then an increase was observed. Within the range of experimental parameters, there exists a critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasing retained dose, going through a minimum and then increased. The critical ion current density in this paper is about 22 μA/cm2.

  12. Advanced transmission electron microscopy studies in low-energy ion implanted Si Semiconductors; Junctions; Silicon

    CERN Document Server

    Wang, T S

    2002-01-01

    As the dimensions of semiconductor devices shrink down to 0.1 mu m and beyond, low energy ion implantation is required to introduce shallower junctions to match such small devices. In this work, transmission electron microscopy (TEM) is employed to analyse low energy implanted junctions with both structural and chemical analyses. High resolution transmission electron microscopy (HRTEM) has been employed to observe Si crystal damage and amorphization due to low energy B sup + /As sup + ion implantations, and also, defect formation/annihilation during rapid thermal annealing (RTA). The damage effects due to different implant temperatures between 300 deg C and -150 deg C are also discussed. Since knowledge of the distribution of low energy ion implanted dopants in Si is extremely important for semiconductor device processing, energy filtered transmission electron microscopy (EFTEM) has been employed to determine implanted B distributions in Si while Z-contrast imaging and X-ray analytical mapping techniques are ...

  13. Surface hardness changes induced by O-, Ca- or P-ion implantation into titanium.

    Science.gov (United States)

    Ikeyama; Nakao; Morikawa; Yokogawa; Wielunski; Clissold; Bell

    2000-12-30

    Titanium or titanium alloys are very attractive biomedical materials. Biocompatible elements of oxygen, calcium and phosphorus were implanted into titanium and changes of surface hardness were measured using an ultra micro indenter (UMIS-2000). A multiple load-partial unload procedure that can reveal a hardness versus depth profile was adopted. Depth profiles of concentration of implanted ions were obtained by SIMS measurement. For O and P implantation, it is observed that the hardness increases with the increases in the dose. O implantation produced the largest increase in hardness, up to 2.2 times higher than the unimplanted titanium. On the other hand, Ca implantation produced only a small increase in the hardness that was independent of the ion dose. The surface oxide layer of a Ca implanted titanium sample was much thicker than the unimplanted samples or those implanted with O and P ions. The depth of maximum hardness increases with increasing energy of implanted ions. The depths of the maximum hardness occur at indentation depths of one-third to one-eighth of the mean ranges of implanted ions.

  14. Effect of phosphorus-ion implantation on the corrosion resistance and biocompatibility of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Biliński, A; Lewandowska-Szumieł, M; Rajchel, B

    2002-08-01

    This work presents data on the structure and corrosion resistance of titanium after phosphorus-ion implantation with a dose of 10(17)P/cm2. The ion energy was 25keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the surface layer was examined by X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The corrosion resistance was examined by electrochemical methods in a simulated body fluid at a temperature of 37 C. Biocompatibility tests in vitro were performed in a culture of human derived bone cells in direct contact with the materials tested. Both, the viability of the cells determined by an XTT assay and activity of the cells evaluated by alkaline phosphatase activity measurements in contact with implanted and non-implanted titanium samples were detected. The morphology of the cells spread on the surface of the materials examined was also observed. The results confirmed the biocompatibility of both phosphorus-ion-implanted and non-implanted titanium under the conditions of the experiment. As shown by transmission electron microscope results, the surface layer formed during phosphorus-ion implantation was amorphous. The results of electrochemical examinations indicate that phosphorus-ion implantation increases the corrosion resistance after short-term as well as long-term exposures.

  15. Implantation of energetic D{sup +} ions into carbon dioxide ices and implications for our solar system: formation of D{sub 2}O and D{sub 2}CO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, Chris J.; Ennis, Courtney P.; Kaiser, Ralf I., E-mail: ralfk@hawaii.edu [Department of Chemistry, University of Hawai' i at Mānoa, Honolulu, HI 96822 (United States)

    2014-10-10

    Carbon dioxide (CO{sub 2}) ices were irradiated with energetic D{sup +} ions to simulate the exposure of oxygen-bearing solar system ices to energetic protons from the solar wind and magnetospheric sources. The formation of species was observed online and in situ by exploiting FTIR spectroscopy. Molecular products include ozone (O{sub 3}), carbon oxides (CO{sub 3}(C {sub 2v}, D {sub 3h}), CO{sub 4}, CO{sub 5}, CO{sub 6}), D2-water (D{sub 2}O), and D2-carbonic acid (D{sub 2}CO{sub 3}). Species released into the gas phase were sampled via a quadrupole mass spectrometer, and possible minor contributions from D2-formaldehyde (D{sub 2}CO), D4-methanol (CD{sub 3}OD), and D2-formic acid (DCOOD) were additionally identified. The feasibility of several reaction networks was investigated by determining their ability to fit the observed temporal column densities of 10 key species that were quantified during the irradiation period. Directly relevant to the CO{sub 2}-bearing ices of comets, icy satellites in the outer solar system, and the ice caps on Mars, this work illustrates for the first time that D2-water is formed as a product of the exposure of CO{sub 2} ices to D{sup +} ions. These findings provide strong support for water formation from oxygen-bearing materials via non-thermal hydrogen atoms, and predict reaction pathways that are likely to be unfolding on the surfaces of asteroids and the Moon.

  16. Optical and magnetic properties of nitrogen ion implanted MgO single crystal

    Institute of Scientific and Technical Information of China (English)

    Liu Chun-Ming; Gu Hai-Quan; Xiang Xia; Zhang Yan; Jiang Yong; Chen Meng; Zu Xiao-Tao

    2011-01-01

    The microstructure, optical property and magnetism of nitrogen ion implanted single MgO crystals are studied.A parallel investigation is also performed in an iron ion implanted single MgO sample as a reference. Large structural,optical and magnetic differences are obtained between the nitrogen and iron implanted samples. Room temperature ferromagnetism with a fairly large coercivity field of 300 Oe (1 Oe=79.5775 A/m), a remanence of 38% and a slightly changed optical absorption is obtained in the sample implanted using nitrogen with a dose of 1×1018 ions/cm2. Transition metal contamination and defects induced magnetism can be excluded when compared with those of the iron ion implanted sample, and the nitrogen doping is considered to be the main origin of ferromagnetism.

  17. MAGNESIUM PRECIPITATION AND DIFUSSION IN Mg+ ION IMPLANTED SILICON CARBIDE

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2015-03-02

    As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. Calculations by Sawan et al. predict that at a dose of ~100 dpa (displacements per atom), there is ~0.5 at.% Mg generated in SiC. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state indicates a lower dechanneling yield observed along the <100> axis. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C–SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C–SiC single crystal at 1573 K has been determined to be 3.8 ± 0.4E-19 m2/s.

  18. Hydrogen-induced defects in ion-implanted Si

    Science.gov (United States)

    Socher, S.; Lavrov, E. V.; Weber, J.

    2012-09-01

    Single crystalline silicon implanted with 28Si ions and subsequently hydrogenated from an rf plasma at 200∘C is studied by Raman and photoluminescence spectroscopy. A broad Raman band at 3830 cm-1 previously assigned to the rovibrational transitions of hydrogen molecules trapped in Si multivacancies [Ishioka , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.60.10852 60, 10852 (1999)] reveals a complex line shape at 60 K. In contrast, our study correlates the Raman band to three different localized traps for hydrogen molecules which are identified from the dependence on the ion dose and annealing behavior. Each of these traps, which is saturated with H2, gives rise to three Raman transitions due to para- and ortho-H2. The H2 signals are shown to correlate with the Si-H vibrational modes at 1888, 1930, and 1964 cm-1. Ortho to para conversion rates of H2 at 77 K and room temperature were found to be 62±15 and 8±2 h, respectively.

  19. Deuterium retention after deuterium plasma implantation in tungsten pre-damaged by fast C+ ions

    Science.gov (United States)

    Efimov, V. S.; Gasparyan, Yu M.; Pisarev, A. A.; Khripunov, B. I.; Koidan, V. S.; Ryazanov, A. I.; Semenov, E. V.

    2016-09-01

    Thermal desorption of deuterium from W was investigated. Virgin samples and samples damaged by 10 MeV C 3+ ions were implanted from plasma in the LENTA facility at 370 K and 773 K. In comparison with the undamaged sample, deuterium retention in the damaged sample slightly increased in the case of deuterium implantation at RT, but decreased in the case of deuterium implantation at 773 K. At 773 K, deuterium was concluded to diffuse far behind the D ion range in the virgin sample, while C implantation region was concluded to be a barrier for D diffusion in the damaged sample.

  20. Antibacterial Property of Martensitic Stainless Steel Generated by Cu Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    XU Bo-fan; NI Hong-wei; DAN Zhi-gang; XIONG Juan; XIONG Ping-yuan

    2004-01-01

    Copper ions were implanted into a AISI420 martensitic stainless steel (SS) by metal vapor vacuum arc (MEVVA) with a dose range 0.2 ×1017 ~5.0×1017 cm-2 at the energy of 100keV. The Cu-implanted stainless steel was treated by a special antibacterial treatment subsequently. The phase compositions in the implanted layer were studied by glancing X-ray diffraction (GXRD) and changes of bacterial appearance on the surface of Cu un-implanted SS and Cu-implanted SS with antibacterial treatment SS were observed by bio-TEM (transmission electron microscopy) separately. The results showed that a suitable amount of Cu-rich phase was dispersed in the implanted layer of Cu-implanted SS that was treated by special antibacterial treatment. So the Cu-implanted martensitic stainless steel with antibacterial treatment reveals excellent antibacterial property against both E. coli and S. aureus.

  1. Antibacterial Property of Martensitic Stainless Steel Generated by Cu Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    XUBo-fan; NIHong-wei; DANZhi-gang; XIONGJuan; XIONGPing-yuan

    2004-01-01

    Copper ions were implanted into a AISI420 martensitic stainless steel (SS) by metal vapor vacuum arc (MEVVA) with a dose range 0.2×1017-5.0×1017cm-2 at the energy of 100keV. The Cu-implanted stainless steel was treated by a special antibacterial treatment subsequently. The phase compositions in the implanted layer were studied by glancing X-ray diffraction (GXRD) and changes of bacterial appearance on the surface of Cu un-implanted SS and Cu-implanted SS with antibacterial treatment SS were observed by bio-TEM (transmission electron microscopy) separately. The results showed that a suitable amount of Cu-rich phase was dispersed in the implanted layer of Cu-implanted SS that was treated by special antibacterial treatment. So the Cu-implanted martensitic stainless steel with antibacterial treatment reveals excellent antibacterial property against both E. coli and S. aureus.

  2. Nanocrystalline diamond in carbon implanted SiO{sub 2}.

    Energy Technology Data Exchange (ETDEWEB)

    Tsoi, K.A.; Prawer, S.; Nugent, K.W.; Walker, R. J.; Weiser, P.S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.

  3. Interferometric pump-probe characterization of the nonlocal response of optically transparent ion implanted polymers

    Science.gov (United States)

    Stefanov, Ivan L.; Hadjichristov, Georgi B.

    2012-03-01

    Optical interferometric technique is applied to characterize the nonlocal response of optically transparent ion implanted polymers. The thermal nonlinearity of the ion-modified material in the near-surface region is induced by continuous wave (cw) laser irradiation at a relatively low intensity. The interferometry approach is demonstrated for a subsurface layer of a thickness of about 100 nm formed in bulk polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV and fluence in the range 1014-1017 cm-2. The laser-induced thermooptic effect in this layer is finely probed by interferometric imaging. The interference phase distribution in the plane of the ion implanted layer is indicative for the thermal nonlinearity of the near-surface region of ion implanted optically transparent polymeric materials.

  4. First-principles calculations on implanted TiO2 by 3d transition metal ions

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    3d transition metal (V, Cr and Fe) ions are implanted into TiO2 by the method of metal ion implantation. The electronic band structures of TiO2 films doped 3d transition metal ions have been analyzed by ab initio band calculations based on a self-consistent full-potential linearized augmented plane-wave method within the first-principle formalism. Influence of implantation on TiO2 films is examined by the method of UV-visible spectrometry. The results of experiment and calculation show that the optical band gap of TiO2 films is narrowed by ion implantation. The calculation shows that the 3d state of V, Cr and Fe ions plays a significant role in red shift of UV-Vis absorbance spectrum.

  5. Nanomechanical and Corrosion Properties of ZK60 Magnesium Alloy Improved by GD Ion Implantation

    Science.gov (United States)

    Tao, Xue Wei; Wang, Zhang Zhong; Zhang, Xiao Bo; Ba, Zhi Xin; Wang, Ya Mei

    2014-09-01

    Gadolinium (Gd) ion implantation with doses from 2.5 × 1016 to 1 × 1017 ions/cm2 into ZK60 magnesium alloy was carried out to improve its surface properties. X-ray photoelectron spectroscopy (XPS), nanoindenter, electrochemical workstation and scanning electron microscope (SEM) were applied to analyze the chemical composition, nanomechanical properties and corrosion characteristics of the implanted layer. The results indicate that Gd ion implantation produces a hybrid-structure protective layer composed of MgO, Gd2O3 and metallic Gd in ZK60 magnesium alloy. The surface hardness and modulus of the Gd implanted magnesium alloy are improved by about 300% and 100%, respectively with the dose of 1 × 1017 ions/cm2, while the slowest corrosion rate of the magnesium alloy in 3.5 wt.% NaCl solution is obtained with the dose of 5 × 1016 ions/cm2.

  6. FATIGUE LIFE PREDICTION OF COMMERCIALLY PURE TITANIUM AFTER NITROGEN ION IMPLANTATION

    Directory of Open Access Journals (Sweden)

    Nurdin Ali

    2013-06-01

    Full Text Available Prediction of fatigue life has become an interesting issue in biomaterial engineering and design for reliability and quality purposes, particularly for biometallic material with modified surfaces. Commercially pure titanium (Cp-Ti implanted with nitrogen ions is a potential metallic biomaterial of the future. The effect of nitrogen ion implantation on fatigue behavior of Cp-Ti was investigated by means of axial loading conditions. The as-received and nitrogen-ion implanted specimens with the energy of 100 keV and dose of 2 × 1017 ions cm-2, were used to determine the fatigue properties and to predict the life cycle of the specimens. The effect of nitrogen ion implantation indicated revealed improved the tensile strength due to the formation of nitride phases, TiN and Ti2N. The fatigue strength of Cp-Ti and Nii-Ti was 250 and 260 MPa, respectively. The analytical results show good agreement with experimental results.

  7. Effects of nitrogen ion implantation on Ca2+ concentration and membrane potential of pollen cell

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The effects of low energy nitrogen ion implantation on Ca2+ concentration and membrane potential of lily (lilium davidii Duch) pollen cell have been studied. The results showed that the Ca2+ concentration was increased when pollen grain was implanted by nitrogen ion with energy 100keV and dose 1013 ions/cra2. However, the increase of Ca2+ concentration was partly inhibited by the addition of Ca2+channel inhibitor depending on dose. And nitrogen ion implantation caused depolarization of pollen cell membrane potential. In other words, membrane potential was increased,but the effect decreased by adding Ca2+ channel inhibitor.However, it was still significantly higher than the membrane potential of control cells. It was indicated that the depolarization of cell membrane potential opened the calcium channel on the membrane that caused the increasing of intraceilular calcium concentration. This might be an earlier step of the effect of low energy nitrogen ion implantation on pollen germination.

  8. Effect of dual ion implantation of calcium and phosphorus on the properties of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Biliński, A; Lewandowska-Szumieł, M; Rajchel, B

    2005-06-01

    This study is concerned with the effect of dual implantation of calcium and phosphorus upon the structure, corrosion resistance and biocompatibility of titanium. The ions were implanted in sequence, first Ca and then P, both at a dose of 10(17) ions/cm2 at a beam energy of 25 keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the implanted layer was examined by XPS and SIMS. The corrosion resistance was determined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. The biocompatibility tests were performed in vitro in a culture of human-derived bone cells (HDBC) in contact with the tested materials. The viability of the cells was determined by an XTT assay and their activity by the measurements of the alkaline phosphatase activity in contact with implanted and non-implanted titanium samples. The in vitro examinations confirmed that, under the conditions prevailing during the experiments, the biocompatibility of Ca + P ion-implanted titanium was satisfactory. TEM results show that the surface layer formed by the Ca + P implantation is amorphous. The corrosion resistance of titanium, examined by the electrochemical methods, appeared to be increased after the Ca + P ion implantation.

  9. Lattice location of platinum ions implanted into single crystal zirconia and their annealing behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Cao, D.X. [Royal Melbourne Inst. of Tech., VIC (Australia); Sood, D.K. [Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research; Brown, I.G. [Lawrence Berkeley Lab., CA (United States)

    1993-12-31

    Single crystal samples of (100) oriented cubic zirconia stabilised with 9.5 mol % yttria were implanted with platinum ions, using a metal vapour vacuum arc (MEVVA) high current ion implanter, to a nominal dose of 1x10{sup 17} ions/cm{sup 2}. The implanted samples were annealed isothermally in air ambient at 1200 deg C, from 1-24 hours. Rutherford Backscattering Spectrometry and Channeling (RBSC) of 2 MeV He ions are employed to determine depth distributions of ion damage, Pt ions and substitutionality of Pt ions before and after annealing. The damage behaviour, Pt migration and lattice location are discussed in terms of metastable phase formation and solid solubility considerations. 7 refs., 3 figs.

  10. Particle radiotherapy with carbon ion beams.

    Science.gov (United States)

    Ohno, Tatsuya

    2013-03-04

    Carbon ion radiotherapy offers superior dose conformity in the treatment of deep-seated malignant tumours compared with conventional X-ray therapy. In addition, carbon ion beams have a higher relative biological effectiveness compared with protons or X-ray beams. The algorithm of treatment planning and beam delivery system is tailored to the individual parameters of the patient. The present article reviews the available literatures for various disease sites including the head and neck, skull base, lung, liver, prostate, bone and soft tissues and pelvic recurrence of rectal cancer as well as physical and biological properties.

  11. Ion implantation effect on surface properties of quartz. [Ar/sup +/, Ne/sup +/, C/sup +/, N/sup +/ implantation

    Energy Technology Data Exchange (ETDEWEB)

    Shitova, Eh.V.; Genkina, N.A.; Zotova, T.M.; Nikolaeva, L.E.; Chigrinskij, Yu.I.; Treskin, S.A.

    Results of studying the effects of implantation of various ions on the surface structure and microhardness of amorphous quartz are presented. Implantation of Ar/sup +/, Ne/sup +/, C/sup +/, N/sup +/ ions is shown to result in the microhardness increase by a factor of 1.5-2. The subsequent annealing of the ion-implanted specimens increases the microhardness 1.5-2 times as much.

  12. Algorithm for statistical noise reduction in three-dimensional ion implant simulations

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Mangas, J.M. E-mail: jesman@ele.uva.es; Arias, J.; Jaraiz, M.; Bailon, L.; Barbolla, J

    2001-05-01

    As integrated circuit devices scale into the deep sub-micron regime, ion implantation will continue to be the primary means of introducing dopant atoms into silicon. Different types of impurity profiles such as ultra-shallow profiles and retrograde profiles are necessary for deep submicron devices in order to realize the desired device performance. A new algorithm to reduce the statistical noise in three-dimensional ion implant simulations both in the lateral and shallow/deep regions of the profile is presented. The computational effort in BCA Monte Carlo ion implant simulation is also reduced.

  13. Long-range effect of ion implantation of Raex and Hardox steels

    Science.gov (United States)

    Budzyński, P.; Kamiński, M.; Droździel, A.; Wiertel, M.

    2016-09-01

    Ion implantation involves introduction of ionized atoms of any element (nitrogen) to metals thanks to the high kinetic energy that they acquired in the electric field. The distribution of nitrogen ions implanted at E = 65 keV energy and D = 1.1017 N+ /cm2 fluence in the steel sample and vacancies produced by them was calculated using the SRIM program. This result was confirmed by RBS measurements. The initial maximum range of the implanted nitrogen ions is ∼⃒0.17 μm. This value is relatively small compared to the influence of nitriding on the thickness surface layer of modified steel piston rings. Measurements of the friction coefficient during the pin-on-disc tribological test were performed under dry friction conditions. The friction coefficient of the implanted sample increased to values characteristic of an unimplanted sample after ca. 1500 measurement cycles. The depth of wear trace is ca. 2.4 μm. This implies that the thickness of the layer modified by the implantation process is ∼⃒2.4 μm and exceeds the initial range of the implanted ions by an order of magnitude. This effect, referred to as a long-range implantation effect, is caused by migration of vacancies and nitrogen atoms into the sample. This phenomenon makes ion implantation a legitimate process of modification of the surface layer in order to enhance the tribological properties of critical components of internal combustion engines such as steel piston rings.

  14. Decrease of Staphylococcal adhesion on surgical stainless steel after Si ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Pacha-Olivenza, Miguel A. [CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); Calzado-Martín, Alicia [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Multigner, Marta [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vera, Carolina [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Broncano, Luis Labajos-; Gallardo-Moreno, Amparo M. [Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); González-Carrasco, José Luis [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vilaboa, Nuria [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); and others

    2014-08-15

    Highlights: • Si ion implantation of AISI 316LVM medical grade alloy might reduce bacterial adhesion and colonization. • Si ion implantation does not impair the attachment, viability and matrix maturation of human mesenchymal stem cells. • Nano-topography and surface chemistry changes account for the Si ion implantation induced effects. - Abstract: 316LVM austenitic stainless steel is often the material of choice on temporal musculoskeletal implants and surgical tools as it combines good mechanical properties and acceptable corrosion resistance to the physiologic media, being additionally relatively inexpensive. This study has aimed at improving the resistance to bacterial colonization of this surgical stainless steel, without compromising its biocompatibility and resistance. To achieve this aim, the effect of Si ion implantation on 316LVM has been studied. First, the effect of the ion implantation parameters (50 keV; fluence: 2.5–5 × 10{sup 16} ions/cm{sup 2}; angle of incidence: 45–90°) has been assessed in terms of depth profiling of chemical composition by XPS and nano-topography evaluation by AFM. The in vitro biocompatibility of the alloy has been evaluated with human mesenchymal stem cells. Finally, bacterial adhesion of Staphylococcus epidermidis and Staphylococcus aureus on these surfaces has been assessed. Reduction of bacterial adhesion on Si implanted 316LVM is dependent on the implantation conditions as well as the features of the bacterial strains, offering a promising implantable biomaterial in terms of biocompatibility, mechanical properties and resistance to bacterial colonization. The effects of surface composition and nano-topography on bacterial adhesion, directly related to ion implantation conditions, are also discussed.

  15. Blistering and cracking of LiTaO{sub 3} single crystal under helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Changdong; Lu, Fei; Ma, Yujie [Shandong University, School of Information Science and Engineering, Jinan, Shandong (China)

    2014-11-29

    Blistering and cracking in LiTaO{sub 3} surface are investigated after 200-keV helium ion implantation and subsequent post-implantation annealing. Rutherford backscattering/channeling is used to examine the lattice damage caused by ion implantation. Blistering is observed through optical microscopy in a dynamic heating process. Atomic force microscopy and scanning electron microscopy measurements are used to detect the LiTaO{sub 3} surface morphology. Experimental results show that blistering and flaking are dependent on implantation fluence, beam current, and also annealing temperature. We speculate that the surface cracking of He{sup +}-implanted LiTaO{sub 3} results from the implantation-induced stress and compression. (orig.)

  16. Unidirectional expansion of lattice parameters in GaN induced by ion implantation

    Institute of Scientific and Technical Information of China (English)

    Fa Tao; Li Lin; Yao Shu-De; Wu Ming-Fang; Zhou Sheng-Qiang

    2011-01-01

    This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metalorganic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.

  17. Influence of implantation of three metallic ions on the mechanical properties of two polymers

    Energy Technology Data Exchange (ETDEWEB)

    Swain, M.V. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics; Perry, A.J. [Australian National Univ., Canberra, ACT (Australia); Treglio, J.R.

    1996-12-31

    Ion implantation of poly ethylene terephthalate (PET) and polystyrene (PS) with various high energy metallic ions at 70 kV to dose of 3 x 10{sup 16} ions/cm 2 have been made. Measurements of the mechanical properties of the polymers before and after implantation have been made with an ultra microindentation system using both pointed and a small (2 nm) radiused spherical tipped indenter. Significant differences have been observed between the Ti-B dual implanted surfaces and those of the Au and W implanted surfaces. For both the PET and PS the resistance to indenter penetration at very low loads was much greater for the Ti-B dual implanted surfaces. The estimated hardness and modulus versus depth of penetration for both indenters shows that the spherical indenter produces more consistent and less controversial values that are somewhat lower than the optimistic estimates from pointed indenters. 8 refs., 2 fig.

  18. Plasma immersion ion implantation and deposition of DLC coating for modification of orthodontic magnets

    Energy Technology Data Exchange (ETDEWEB)

    Wongsarat, W. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, Bangkok 12120 (Thailand); Aukkaravittayapun, S. [National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, Bangkok 12120 (Thailand); Jotikasthira, D. [Department of Odontology-Oral Pathology, Faculty of Dentistry, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2012-02-01

    This study was aimed to use the plasma immersion ion implantation and deposition (PIII-D) technique to form diamond-like carbon (DLC) thin films on orthodontic magnets to solve the corrosion problem. To search for the optimal material modification effect, PIII-D conditions including gases, processing time, and pulsing mode were varied. The formation of DLC films was confirmed and characterized with Raman spectra. The intensity of the remnant magnetic field of the magnets and the hardness, adhesion and thickness of the thin films were then measured. A corrosion test was carried out using clinic dental fluid. Improved benefits including a satisfying hardness, adhesion, remnant magnetic strength and corrosion resistance of the DLC coating could be achieved by using a higher interrupting time ratio and shorter processing time.

  19. Fractal Pattern Growth in Ti-Implanted Steel with High Ion Flux

    Institute of Scientific and Technical Information of China (English)

    张通和; 吴瑜光; 刘安东

    2002-01-01

    We report on the formation of metal nanometre phase and fractal patterns in steel using metal vapour vacuum arc source ion implantation with high ion flux. The dense nanometre phases are cylindrical and well dispersed in the Ti-implanted layer with an ion flux up to 50μA/cm2. The collision fractal pattern is formed in Ti-implanted steel with an ion flux of 25μA/cm2 and the disconnected fractal pattern is observed with an ion flux of 50μA/cm2.The average density ofnanometre phases decreases from 1.2 × 1011/cm2 to 6.5 × 1010/cm2 as the ion flux increases from 25 μA/cm2 to 50 μA/cm2. Fractal pattern growth is in remarkable agreement with Sander's diffusion-limited aggregation model. The alloy clusters have diffused and aggregated in chains forming branches to grow a beautiful tree during Ti implantation with an ion flux ranging from 75μA/cm2 to 85μA/cm2. We discuss the model of fractal pattern growth during ion implantation with high ion flux.

  20. Influence of Si ion implantation on structure and morphology of g-C{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Varalakshmi, B.; Sreenivasulu, K.V. [School of Engineering Sciences and Technology (SEST), University of Hyderabad, Hyderabad 500046 (India); Asokan, K. [Inter University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, Near Vasant Kunj, New Delhi 110067 (India); Srikanth, V.V.S.S., E-mail: vvsssse@uohyd.ernet.in [School of Engineering Sciences and Technology (SEST), University of Hyderabad, Hyderabad 500046 (India)

    2016-07-15

    Effect of Si ion implantation on structural and morphological features of graphite-like carbon nitride (g-C{sub 3}N{sub 4}) was investigated. g-C{sub 3}N{sub 4} was prepared by using a simple atmospheric thermal decomposition process. The g-C{sub 3}N{sub 4} pellets were irradiated with a Si ion beam of energy 200 keV with different fluencies. Structural, morphological and elemental, and phase analysis of the implanted samples in comparison with the pristine samples was carried out by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques, respectively. The observations revealed that Si ion implantation results in a negligible change in the crystallite size and alteration of the network-like to the sheet-like morphology of g-C{sub 3}N{sub 4} and Si ions in the g-C{sub 3}N{sub 4} network.

  1. Photoluminescence evolution in self-ion-implanted and annealed silicon

    Institute of Scientific and Technical Information of China (English)

    Yang Yu; Wang Chong; Yang Rui-Dong; Li Liang; Xiong Fei; Bao Ji-Ming

    2009-01-01

    Si+ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W~(TA) and Si~(TO) peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800 ℃, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D_1 and D_2 bands, can be observed at a temperature as high as 280 K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.

  2. Pulsed ion sheath dynamics in a cylindrical bore for inner surface grid-enhanced plasma source ion implantation

    CERN Document Server

    Wang Jiu Li; Fan Song Hua; Yang Wu Bao; Yang Size

    2002-01-01

    Based on authors' recently proposed grid-enhanced plasma source ion implantation (GEPSII) technique for inner surface modification of materials with cylindrical geometry, the authors present the corresponding theoretical studies of the temporal evolution of the plasma ion sheath between the grid electrode and the target in a cylindrical bore. Typical results such as the ion sheath evolution, time-dependent ion density and time-integrated ion energy distribution at the target are calculated by solving Poisson's equation coupled with fluid equations for collisionless ions and Boltzmann assumption for electrons using finite difference methods. The calculated results can further verify the feasibility and superiority of this new technique

  3. Effect of calcium and phosphorus ion implantation on the corrosion resistance and biocompatibility of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Lewandowska-Szumieł, M; Barcz, A; Sobczak, J W; Biliński, A; Rajchel, A

    2004-01-01

    This paper is concerned with the corrosion resistance and biocompatibility of titanium after surface modification by the ion implantation of calcium or phosphorus or calcium + phosphorus. Calcium and phosphorus ions were implanted in a dose of 10(17) ions/cm(2). The ion beam energy was 25 keV. The microstructure of the implanted layers was examined by TEM. The chemical composition of the surface layers was determined by XPS and SIMS. The corrosion resistance was examined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. The biocompatibility was evaluated in vitro. As shown by TEM results, the surface layers formed during calcium, phosphorus and calcium + phosphorus implantation were amorphous. The results of the electrochemical examinations (Stern's method) indicate that the calcium, phosphorus and calcium + phosphorus implantation into the surface of titanium increases its corrosion resistance in stationary conditions after short- and long-term exposures in SBF. Potentiodynamic tests show that the calcium-implanted samples undergo pitting corrosion during anodic polarisation. The breakdown potentials measured are high (2.5 to 3 V). The good biocompatibility of all the investigated materials was confirmed under the specific conditions of the applied examination, although, in the case of calcium implanted titanium it was not as good as that of non-implanted titanium.

  4. SELECTIVE NEURITE OUTGROWTH ON SILVER NEGATIVE ION (Ag-)-IMPLANTED POLYSTYRENE SURFACES

    Institute of Scientific and Technical Information of China (English)

    Hiroko Sato; Hiroshi Tsuji; Hitoshi Sasaki; Shinichi Ikemura; Yasuhito Gotoh; Junzo Ishikawa; Sei-ichi Nishimoto

    2004-01-01

    The negative ion implantation technique was applied to modify polymer surfaces of culture dishes for neuronal cells, PC12h. The silver negative ion (Ag-)-implantation was carried out at an ion energy of 20 keV and a dose of 3 ×1015 ions/cm2 with non-treated polystyrene (NTPS), tissue culture polystyrene (TCPS), and collagen-coated TCPS-Iwaki (CCPS). Ag--implanted surfaces of Ag/NTPS, Ag/TCPS, and Ag/CCPS were studied with respect to contact angle and/or chemical composition. The numerical values of contact angles on Ag/NTPS and Ag/TCPS were similar within experimental error, indicating the resemblance in their hydrophobicity and hydrophilicity. The PC12h cells, however, were attached only to the Ag--implanted region of NTPS, but not to the non-implanted NTPS region. Moreover, the neurite outgrowth was also observed to extend specifically along the Ag--implanted region of NTPS but not on the non-implanted NTPS region,although neurites extended towards all directions on collagen-coated TCPS as a control surface. There was no remarkable difference in neurite outgrowth among Ag--implanted regions of TCPS and CCPS. Thus Ag/NTPS region was affirmed to promote highly selective attachment, growth, and differentiation of PC 12h cells, although its mechanism is still unknown.

  5. Graphitic carbon in a nanostructured titanium oxycarbide thin film to improve implant osseointegration

    Energy Technology Data Exchange (ETDEWEB)

    Zanoni, R., E-mail: robertino.zanoni@uniroma1.it [Dipartimento di Chimica, Università di Roma ‘La Sapienza’ p.le Aldo Moro 5, 00185 Rome (Italy); Ioannidu, C.A.; Mazzola, L.; Politi, L. [Dipartimento di Scienze Biochimiche, Università di Roma ‘La Sapienza’, p.le Aldo Moro 5, 00185 Rome (Italy); Misiano, C. [Romana Film Sottili, Anzio, Rome (Italy); Longo, G. [Istituto Superiore di Sanità, Viale Regina Elena 299, 00161 Rome (Italy); Ecole Polytechnique Fédérale de Lausanne, SB IPSB LPMV, BSP 409 (Cubotron UNIL), R.te de la Sorge, CH-1015 Lausanne (Switzerland); Falconieri, M. [ENEA, Unità Tecnica Applicazioni delle Radiazioni, via Anguillarese 301, 00123 Rome (Italy); Scandurra, R. [Dipartimento di Scienze Biochimiche, Università di Roma ‘La Sapienza’, p.le Aldo Moro 5, 00185 Rome (Italy)

    2015-01-01

    A nanostructured coating layer on titanium implants, able to improve their integration into bones and to protect against the harsh conditions of body fluids, was obtained by Ion Plating Plasma Assisted, a method suitable for industrial applications. A titanium carbide target was attached under vacuum to a magnetron sputtering source powered with a direct current in the 500–1100 W range, and a 100 W radio frequency was applied to the sample holder. The samples produced at 900 W gave the best biological response in terms of overexpression of some genes of proteins involved in bone turnover. We report the characterization of a reference and of an implant sample, both obtained at 900 W. Different micro/nanoscopic techniques evidenced the morphology of the substrates, and X-ray Photoelectron Spectroscopy was used to disclose the surface composition. The layer is a 500 nm thick hard nanostructure, composed of 60% graphitic carbon clustered with 15% TiC and 25% Ti oxides. - Highlights: • Nanostructured TiC protective layers were produced on Ti samples for prostheses. • Ion Plating Plasma-Assisted Deposition from TiC targets was used on Ti samples. • A model of the surface layer has been drawn from XPS, Raman, AFM, FIB/SEM, TEM. • The layer is mainly composed of graphitic carbon in addition to TiC and Ti oxides.

  6. EFFECT OF CERIUM ION IMPLANTATION ON THE AQUEOUS CORROSION BEHAVIOR OF ZIRCONIUM

    Institute of Scientific and Technical Information of China (English)

    D.Q. Peng; X.D. Bai; Q.G. Zhou; X.W. Chen; R.H. Yu; X.Y. Liu

    2004-01-01

    In order to study the influence of cerium ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted by cerium ions with a dosage range from 1 ×1016 to 1 ×1017 ions/cm2 at about 150℃, using MEWA source at an acceler ative voltage of 40kV. The valence of the surface layer was analyzed by X-ray photoelectron spectroscopy (XPS); Three-sweep potentiodynamic polarization measurement was employed to value the aqueous corrosion resistance of zirconium in a 0.5mol/L H2SO4 solution. It was found that a remarkable decline in the aqueous corrosion behavior of zirconium implanted with cerium ions compared with that of the as-received zirconium. Finally, the mechanism of the corrosion resistance decline of the cerium-implanted zirconium is discussed.

  7. CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Spurgeon, Steven R.; Liu, Jia; Edwards, Danny J.; Schreiber, Daniel K.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2016-09-26

    The aim of this study is to characterize precipitates in Mg+ ion implanted and high-temperature annealed cubic silicon carbide using scanning transmission electron microscopy, electron energy loss spectroscopy and atom probe tomography.

  8. Surface properties of nitrogen-ion-implanted TiNi shape memory alloy

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    X-ray diffraction (XRD), auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface properties of the N+-ion-implanted TiNi alloy.There is a high nitrogen content region at the outermost surface of the N+-ion-implanted TiNi alloy.The detected nitrogen exists mainly in the form of TiN.Small amounts of Ti3O5 and TiO2 also exist on the surface of the N+-ion-implanted TiNi sample.The modified layer of the N+-ion-implanted sample can work as an obstacle layer of the nickel's dissolution, which obstructs Ni dissolving from the TiNi surface effectively.

  9. Indications of Carbon Ion Therapy at CNAO

    Science.gov (United States)

    Orecchia, Roberto; Rossi, Sandro; Fossati, Piero

    2009-03-01

    CNAO will be a dual center capable of providing therapeutic beams of protons and carbon ions with maximum energy of 400 MeV/u. At the beginning, it will be equipped with three treatment rooms with fixed horizontal and vertical beam lines. In a subsequent phase, two more rooms with a rotating gantry are foreseen. An active spot scanning dose delivery system will be employed. Initially, 80% of the treatments will be carried out with carbon ions. All patients will be treated within clinical trials to assess carbon ion indications with an evidence-based methodology. Seven disease-specific working groups have been developed: lung tumors, liver tumors, sarcomas, head and neck tumors, central nervous system lesions, eye tumors and pediatric tumors. The last two groups will be treated mainly with protons. In the first phase, CNAO will focus on head and neck cancers, treating inoperable, residual or recurrent malignant salivary gland tumors, mucosal melanoma, adenocarcinoma and unfavorably located SCC (nasal and paranasal sinuses). Carbon ions will be employed as a boost in the treatment of locally advanced, poor prognosis, SCC of the hypopharynx and tongue base. Bone and soft tissue sarcomas of the extremity will be treated with a limb-sparing approach, and trunk sarcomas will be treated with exclusive or post-operative irradiation. Skull base tumors (chordoma and chondrosarcoma), recurrent or malignant meningioma and glial tumors will be treated with carbon ions. After sufficient expertise has been gained in coping with organ motion, CNAO will start treating thoracic and abdominal targets. HCC will be treated in inoperable patients with one or more lesions that can be included in a single CTV. Early stage NSCLC will be treated. In the second phase, two more groups on gynecological malignancies and digestive tumors (esophageal cancer, rectal cancer, pancreatic cancer) will be created.

  10. Direction-dependent RBS channelling studies in ion implanted LiNbO3

    Science.gov (United States)

    Wendler, E.; Becker, G.; Rensberg, J.; Schmidt, E.; Wolf, S.; Wesch, W.

    2016-07-01

    Damage formation in ion implanted LiNbO3 was studied by Rutherford backscattering spectrometry (RBS) along various directions of the LiNbO3 crystal. From the results obtained it can be unambiguously concluded that Nb atoms being displaced during ion implantation preferably occupy the free octahedron sites of the LiNbO3 lattice structure and most likely also form NbLi antisite defects.

  11. Development of physical fundamentals and computer design of technology of ion implantation of metals

    Energy Technology Data Exchange (ETDEWEB)

    Kolobov, Yu.P.; Sharkeev, Yu.P.; Abdrashitov, V.G.; Kashin, O.A

    2001-07-01

    The unique possibilities of controlled modification of the chemical composition, structure and properties of thin surface films of metals and alloys are offered by the method of high-dose ion implantation (Hll). Modification of the surface of materials by ion implantation has been used on an increasing scale as an industrial technology of ensuring a large increase of the service life of components and tools. It is urgent to investigate the physical fundamentals of this promising technology.

  12. Direction-dependent RBS channelling studies in ion implanted LiNbO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de; Becker, G.; Rensberg, J.; Schmidt, E.; Wolf, S.; Wesch, W.

    2016-07-15

    Damage formation in ion implanted LiNbO{sub 3} was studied by Rutherford backscattering spectrometry (RBS) along various directions of the LiNbO{sub 3} crystal. From the results obtained it can be unambiguously concluded that Nb atoms being displaced during ion implantation preferably occupy the free octahedron sites of the LiNbO{sub 3} lattice structure and most likely also form Nb{sub Li} antisite defects.

  13. Multifunctions of dual Zn/Mg ion co-implanted titanium on osteogenesis, angiogenesis and bacteria inhibition for dental implants.

    Science.gov (United States)

    Yu, Yiqiang; Jin, Guodong; Xue, Yang; Wang, Donghui; Liu, Xuanyong; Sun, Jiao

    2017-02-01

    In order to improve the osseointegration and long-term survival of dental implants, it is urgent to develop a multifunctional titanium surface which would simultaneously have osteogeneic, angiogeneic and antibacterial properties. In this study, a potential dental implant material-dual Zn/Mg ion co-implanted titanium (Zn/Mg-PIII) was developed via plasma immersion ion implantation (PIII). The Zn/Mg-PIII surfaces were found to promote initial adhesion and spreading of rat bone marrow mesenchymal stem cells (rBMSCs) via the upregulation of the gene expression of integrin α1 and integrin β1. More importantly, it was revealed that Zn/Mg-PIII could increase Zn(2+) and Mg(2+) concentrations in rBMSCs by promoting the influx of Zn(2+) and Mg(2+) and inhibiting the outflow of Zn(2+), and then could enhance the transcription of Runx2 and the expression of ALP and OCN. Meanwhile, Mg(2+) ions from Zn/Mg-PIII increased Mg(2+) influx by upregulating the expression of MagT1 transporter in human umbilical vein endothelial cells (HUVECs), and then stimulated the transcription of VEGF and KDR via activation of hypoxia inducing factor (HIF)-1α, thus inducing angiogenesis. In addition to this, it was discovered that zinc in Zn/Mg-PIII had certain inhibitory effects on oral anaerobic bacteria (Pg, Fn and Sm). Finally, the Zn/Mg-PIII implants were implanted in rabbit femurs for 4 and 12weeks with Zn-PIII, Mg-PIII and pure titanium as controls. Micro-CT evaluation, sequential fluorescent labeling, histological analysis and push-out test consistently demonstrated that Zn/Mg-PIII implants exhibit superior capacities for enhancing bone formation, angiogenesis and osseointegration, while consequently increasing the bonding strength at bone-implant interfaces. All these results suggest that due to the multiple functions co-produced by zinc and magnesium, rapid osseointegration and sustained biomechanical stability are enhanced by the novel Zn/Mg-PIII implants, which have the potential

  14. Platelet adhesion and plasma protein adsorption control of collagen surfaces by He{sup +} ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Kurotobi, K. E-mail: kurotobi@postman.riken.go.jp; Suzuki, Y.; Nakajima, H.; Suzuki, H.; Iwaki, M

    2003-05-01

    He{sup +} ion implanted collagen-coated tubes with a fluence of 1 x 10{sup 14} ions/cm{sup 2} were exhibited antithrombogenicity. To investigate the mechanisms of antithrombogenicity of these samples, plasma protein adsorption assay and platelet adhesion experiments were performed. The adsorption of fibrinogen (Fg) and von Willebrand factor (vWf) was minimum on the He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2}. Platelet adhesion (using platelet rich plasma) was inhibited on the He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2} and was accelerated on the untreated collagen and ion implanted collagen with fluences of 1 x 10{sup 13}, 1 x 10{sup 15} and 1 x 10{sup 16} ions/cm{sup 2}. Platelet activation with washed platelets was observed on untreated collagen and He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2} and was inhibited with fluences of 1 x 10{sup 13}, 1 x 10{sup 15} and 1 x 10{sup 16} ions/cm{sup 2}. Generally, platelets can react with a specific ligand inside the collagen (GFOGER sequence). The results of platelets adhesion experiments using washed platelets indicated that there were no ligands such as GFOGER on the He{sup +} ion implanted collagen over a fluence of 1 x 10{sup 13} ions/cm{sup 2}. On the 1 x 10{sup 14} ions/cm{sup 2} implanted collagen, no platelet activation was observed due to the influence of plasma proteins. >From the above, it is concluded that the decrease of adsorbed Fg and vWf caused the antithrombogenicity of He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2} and that plasma protein adsorption took an important role repairing the graft surface.

  15. Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

    Science.gov (United States)

    Weigand, A. J.; Meyer, M. L.; Ling, J. S.

    1977-01-01

    An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

  16. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  17. Structural and magnetic characteristics of FeCo thin films modified by combinatorial ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Groudeva-Zotova, S. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Karl, H. [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Savan, A. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Feydt, J. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Wehner, B. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Walther, T. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Zotov, N. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany)]. E-mail: zotov@caesar.de; Stritzker, B. [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Ludwig, A. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Institute of Materials, Faculty of Mechanical Engineering, Ruhr-University, 44780 Bochum (Germany)

    2006-01-20

    This work presents results on modifications of the structure and the magnetic properties of magnetron-sputtered Fe{sub 5}Co{sub 5} films induced by high dose Sm or Xe ion implantation. A combinatorial approach was used in order to screen a wide range of implantation doses from 4 x 10{sup 15} to 1.6 x 10{sup 17} ions/cm{sup 2}. Sm-implanted FeCo films are considered as precursors for the synthesis of multi-phase exchange-spring magnetic materials while Xe ion implantation of such films is known as a method to modify film stresses and magnetic properties. Materials libraries of as-implanted films were investigated by energy dispersive X-ray analysis (EDX) and secondary ion mass spectrometry (SIMS) for the film composition and concentration depth profiles, transmission electron microscopy (TEM) and X-ray diffraction (XRD) for the film morphology and crystalline structure, vibrating sample magnetometry (VSM) for the magnetization behaviour and four-point probe measurements for the film resistivity. Three main results were found on the basis of this combinatorial study: (i) The high-dose Sm-implanted samples have an overall Sm concentration above the value necessary for Sm-Fe(Co) alloy formation and show magnetic hysteresis curves corresponding to two-phase or two-layer film structure; (ii) The two implanted series show quite different magnetic anisotropy in the film plane - a negligible one for Xe and a strong one for Sm implantation; (iii) For the Sm-implanted samples a clear local maxima in the coercivity H{sub c} and the anisotropy field H {sub k} can be seen at D {sub Sm} {>=} 1 x 10{sup 16} ions/cm{sup 2}. The XRD spectra of the libraries show that the last two effects are closely related to the film strains introduced by the implantation process.

  18. Doping effects induced by potassium ion implantation in solid C{sub 60}

    Energy Technology Data Exchange (ETDEWEB)

    Trouillas, P. [Faculte des Sci., Limoges (France). Lab. d`Electronique des Polymers sous Faisceau Ionique; Moliton, A. [Faculte des Sci., Limoges (France). Lab. d`Electronique des Polymers sous Faisceau Ionique; Ratier, B. [Faculte des Sci., Limoges (France). Lab. d`Electronique des Polymers sous Faisceau Ionique

    1995-08-01

    Ion implantation is presented here as another technique for investigating the electrical properties of doped solid C{sub 60}. The conductivity and the thermopower have been studied versus the implantation parameters in order to investigate electrical transport phenomena which occur in implanted solid C{sub 60}, and thus prove doping effects. First results on ion implantation in C{sub 60} show a strong competition between damaging (induced by energetic ions) and doping effect (induced by charge transfer). Generally, electron transfers between the potassium atoms and the C{sub 60} molecules produce a conducting phase: up to x{approx} =0.1, metallic K{sub 3}C{sub 60} islands are dispersed in an insulating phase (virgin C{sub 60}); then, for x>0.1, damage plays a major role, leading to conduction paths through the samples (the saturation threshold x{approx} =0.1 is lower than in chemical doping due to the degradations). Potassium ion implantation with low energy (E{approx} =30 keV) and low fluence (D<10{sup 15} ions/cm{sup 2}) seems to provide the best implantation parameters for doping. Indeed, small ion size, low energy and low fluence are necessary in order to diminish the degradation effects. (orig.)

  19. Temperature elevated N ion implantation of Ti6Al4V alloys using the plasma source

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Specimens of Ti6Al4V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning Electron Mi croscopy (SEM), and Glancing angle X-ray Diffraction (XRD) were utilized to evaluate the surface property improvements. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wear resistance were also obtained in the high tempera ture implantation. The XRD image showed the presence of nitrides of titanium at the implanted surface.

  20. Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    CUI Jin-Ming; CHEN Xiang-Dong; FAN Le-Le; GONG Zhao-Jun; ZOU Chong-Wen; SUN Fang-Wen; HAN Zheng-Fu; GUO Guang-Can

    2012-01-01

    Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation.Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters.Moreover,with a suitable mask,a lattice composed of nitrogen-vacancy centers is fabricated.Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation.Along with compatible standard lithography,such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.

  1. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    Science.gov (United States)

    Rysbaev, A. S.; Khuzhaniyazov, Zh. B.; Normuradov, M. T.; Rakhimov, A. M.; Bekpulatov, I. R.

    2014-11-01

    The effect of implantation of Ba, P, B, and alkali element ions with a low energy ( E 0 narrowing of the band gap in silicon, which can be explained by overlapping of the wavefunctions of electrons of impurity atoms and the formation of the impurity subband overlapping with the allowed band. After implantation thermal annealing, SiP, BaSi, and SiB3 films of nano-sized thickness are obtained for the first time. Optimal regimes of ion implantation and subsequent annealing for the formation of silicide films are determined, and their electron structure is investigated.

  2. Damage properties in ion-implanted YbVO4 crystals using RBS/Channeling study

    Science.gov (United States)

    Jia, Chuan-Lei; Wei, Zhi-Ning

    2014-03-01

    YbVO4 crystals are implanted with 3.0 MeV Ni ions and 600 keV H ions with fluences of 2.0-10.0×1014 cm-2 and 6.0×1016 cm-2, respectively. In addition, post-implantation thermal annealing is performed at selected temperatures. The disorder induced by implantation and the effect of the annealing on the recovery of the crystal lattice are investigated by RBS/Channeling measurements with the help of simulation code RUMP.

  3. Production yield of rare-earth ions implanted into an optical crystal

    Energy Technology Data Exchange (ETDEWEB)

    Kornher, Thomas, E-mail: t.kornher@physik.uni-stuttgart.de; Xia, Kangwei; Kolesov, Roman; Reuter, Rolf; Villa, Bruno; Wrachtrup, Jörg [3. Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart (Germany); Kukharchyk, Nadezhda; Wieck, Andreas D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum (Germany); Siyushev, Petr [Universität Ulm, Institut für Quantenoptik, 89081 Ulm (Germany); Stöhr, Rainer [3. Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart (Germany); Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Schreck, Matthias [Experimentalphysik IV, Universität Augsburg, 86159 Augsburg (Germany); Becker, Hans-Werner [RUBION, Ruhr-Universität Bochum, 44780 Bochum (Germany)

    2016-02-01

    Rare-earth (RE) ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%. Such high implantation yield indicates a feasibility of creation of nanopatterned rare-earth doping and suggests strong potential of RE species for on-chip photonic devices.

  4. Measurement of lattice damage caused by ion-implantation doping of semiconductors.

    Science.gov (United States)

    Hunsperger, R. G.; Wolf, E. D.; Shifrin, G. A.; Marsh, O. J.; Jamba, D. M.

    1971-01-01

    Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.

  5. Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

    Science.gov (United States)

    Tran, Tuan T.; Alkhaldi, Huda S.; Gandhi, Hemi H.; Pastor, David; Huston, Larissa Q.; Wong-Leung, Jennifer; Aziz, Michael J.; Williams, J. S.

    2016-08-01

    Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant ( ˜1 ×1015 ion cm-2 ) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2 ×1016 ion cm-2 . We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a S n - implant at a fluence of 4.5 ×1016 ion cm-2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ˜15 at.% , which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.

  6. Carbon-based ion and molecular channels

    Science.gov (United States)

    Sint, Kyaw; Wang, Boyang; Kral, Petr

    2008-03-01

    We design ion and molecular channels based on layered carboneous materials, with chemically-functionalized pore entrances. Our molecular dynamics simulations demonstrate that these ultra-narrow pores, with diameters around 1 nm, are highly selective to the charges and sizes of the passing (Na^+ and Cl^-) ions and short alkanes. We demonstrate that the molecular flows through these pores can be easily controlled by electrical and mechanical means. These artificial pores could be integrated in fluidic nanodevices and lab-on-a-chip techniques with numerous potential applications. [1] Kyaw Sint, Boyang Wang and Petr Kral, submitted. [2] Boyang Wang and Petr Kral, JACS 128, 15984 (2006).

  7. Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2007-05-02

    We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300 deg. C, the QDs are rapid thermally annealed at 850 deg. C for 30 s. Proton implantation induces less energy shift than P ion implantation for a given concentration of atomic displacements due to the more efficient dynamic annealing of the defects created by protons. The implantation-induced energy shift reaches a maximum value of about 260 meV for a dose of 5 x 10{sup 12} ions cm{sup -2} in the P ion implanted QDs, which also show narrower PL linewidths compared to the proton implanted QDs. We also report the effects of an InGaAs top cap layer on the ion implantation-induced QD intermixing and show that defect production and annihilation processes evolve differently in InGaAs and InP layers and vary with the implantation temperature. When the implantation is performed at higher temperatures, the energy shift of the P ion implanted QDs capped with an InP layer increases due to the reduction in larger defect cluster formation at higher temperatures, while the energy shift of the proton implanted QDs decreases due to increased dynamic annealing irrespective of their cap layers.

  8. Microstructure and antibacterial property of stainless steel implanted by Cu ions

    Institute of Scientific and Technical Information of China (English)

    XU Bo-fan; NI Hong-wei; XIONG Ping-yuan; XIONG Juan; DAN Zhi-gang

    2004-01-01

    Copper ions were implanted into AISI 304 austenitic stainless steel by metal vapor vacuum are (MEVVA) with 60 - 100 keV energy and a dose range (0.2 - 5.0) × 1017 cm-2. Then Cu-implanted stainless steel was treated by a special antibacterial treatment. Antibacterial rates of Cu-implanted stainless steel, Cu-implanted stainless steel with special antibacterial treatment and un-implanted stainless steel were obtained by agar plate method. Phase composition in the implanted layer was analyzed by glancing X-ray diffraction (GXRD). Microstructure of antibacterial stainless steel was observed with transmission electron microscopy (TEM), and changes of the bacterium appearance after 24 h antibacterial action on the surface of un-implanted and Cu-implanted stainless steel with antibacterial treatment were observed with bio-TEM respectively. The results show that stainless steel obtains antibacterial property against E. coli when the Cu ions dose approaches to the saturated one. A suitable amount of Cu-rich phase uniformly disperses on the surface of Cu-implanted stainless steel that is treated by the special antibacterial treatment. The Cu-rich phase naked on the surface has a function of damage to pericellular membrane and cell wall,the pericellular membrane is thickened and the karyon degraded, and finally, bacteria die. Cu-rich phase naked on the surface endows stainless steel with best antibacterial property.

  9. Synergistic effects of iodine and silver ions co-implanted in 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; Malherbe, J. B.; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-12-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  10. Quantitative secondary ion mass spectrometric analysis of secondary ion polarity in GaN films implanted with oxygen

    Science.gov (United States)

    Hashiguchi, Minako; Sakaguchi, Isao; Adachi, Yutaka; Ohashi, Naoki

    2016-10-01

    Quantitative analyses of N and O ions in GaN thin films implanted with oxygen ions (16O+) were conducted by secondary ion mass spectrometry (SIMS). Positive (CsM+) and negative secondary ions extracted by Cs+ primary ion bombardment were analyzed for oxygen quantitative analysis. The oxygen depth profiles were obtained using two types of primary ion beams: a Gaussian-type beam and a broad spot beam. The oxygen peak concentrations in GaN samples were from 3.2 × 1019 to 7.0 × 1021 atoms/cm3. The depth profiles show equivalent depth resolutions in the two analyses. The intensity of negative oxygen ions was approximately two orders of magnitude higher than that of positive ions. In contrast, the O/N intensity ratio measured using CsM+ molecular ions was close to the calculated atomic density ratio, indicating that the SIMS depth profiling using CsM+ ions is much more effective for the measurements of O and N ions in heavy O-implanted GaN than that using negative ions.

  11. FRACTAL PATTERN GROWTH OF METAL ATOM CLUSTERS IN ION IMPLANTED POLYMERS

    Institute of Scientific and Technical Information of China (English)

    ZHANG TONG-HE; WU YU-GUANG; SANG HAI-BO; ZHOU GU

    2001-01-01

    The fractal and multi-fractal patterns of metal atoms are observed in the surface layer and cross section of a metal ion implanted polymer using TEM and SEM for the first time. The surface structure in the metal ion implanted polyethylene terephthalane (PET) is the random fractal. Certain average quantities of the random geometric patterns contain self-similarity. Some growth origins appeared in the fractal pattern which has a dimension of 1.67. The network structure of the fractal patterns is formed in cross section, having a fractal dimension of 1.87. So it can be seen that the fractal pattern is three-dimensional space fractal. We also find the collision cascade fractal in the cross section of implanted nylon, which is similar to the collision cascade pattern in transverse view calculated by the TRIM computer program. Finally, the mechanism for the formation and growth of the fractal patterns during ion implantation is discussed.

  12. Improvement of tribological behavior of a Ti-Al-V alloy by nitrogen ion implantation

    Institute of Scientific and Technical Information of China (English)

    LIU Yanzhang; ZU Xiaotao; QIU Shaoyu; HUANG Xinquan

    2006-01-01

    The tribological properties especially wear and hardness of a Ti-Al-V alloy with nitrogen implantation (energy 60 keV) were investigated. The implantation was carried out at fluences range from 1×1016 to 4×1017 ions/cm2. Glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS) analyses were performed to obtain surface characterization of the implanted sample. The unimplanted and implanted samples were also annealed at 600 ℃ in order to understand the influence of annealing on the tribological properties of Ti-Al-V. The hardness shows significant improvement at the higher fluence. After annealing at 600 ℃, the friction coefficient exhibits a relative decrease for the nitrogen-implanted samples. In addition, the wear rates of the implanted samples exhibits a great decrease after annealing at 600 ℃. Nature of the surface and reason for the variation and improvement in wear resistance were discussed in detail.

  13. Microdosimetry of proton and carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Liamsuwan, Thiansin [Thailand Institute of Nuclear Technology, Ongkharak, Nakhon Nayok 26120 (Thailand); Hultqvist, Martha [Medical Radiation Physics, Department of Physics, Stockholm University, SE-10691 (Sweden); Lindborg, Lennart; Nikjoo, Hooshang, E-mail: hooshang.nikjoo@ki.se [Radiation Biophysics Group, Department of Oncology-Pathology, Karolinska Institutet, Box 260 SE-17176, Stockholm (Sweden); Uehara, Shuzo [School of Health Sciences, Kyushu University, Fukuoka 812-8581 (Japan)

    2014-08-15

    carbon ion beams. The results are useful for characterizing ion beams of practical importance for biophysical modeling of radiation-induced DNA damage response and repair in the depth profiles of protons and carbon ions used in radiotherapy.

  14. InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    CHEN Jie; ZHAO Jie; WANG Yong-chen; HAN De-jun

    2005-01-01

    A quantum well intermixing(QWI) investigation on double quantum well(DQW) structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing (RTA) was carried out by means of photoluminescence(PL). The ion implantation was performed at the energy of 120 kev with the dose ranging from 1 × 1011 cm-2 to 1× 1014 cm-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation(~1×1011 cm-2 ) indicating that the implant vacancy distribution affects the QWI. When the ion dose is over ~ 1 × 1012 cm-2 , the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.

  15. Impact of Ion Implantation on Licorice ( Glycyrrhiza uralensis Fisch ) Growth and Antioxidant Activity Under Drought Stress

    Institute of Scientific and Technical Information of China (English)

    LIU Jingnan; TONG Liping; SHEN Tongwei; LI Jie; WU Lijun; YU Zengliang

    2007-01-01

    Low energy ion beams are known to have stimulation effects on plant generation and to improve plants' intrinsic quality. In the present study, the growth and physiological index of licorice implanted with 0, 8, 10, 12 and 14× (2.6×l015) ions/cm2 were investigated under well-watered and drought-stress conditions. The results showed that a proper dose of ion implantation was particularly efficient in stimulating the licorice growth and improving the plant biomass significantly in both the well-watered and drought-stress conditions. The physiological results of licorice measured by leaf water potential, lipid oxidation, soluble protein and antioxidant system showed a significant correlation between ion implantation and water regime except for leaf water potential. Therefore, the study indicated that ion implantation can enhance licorice's drought tolerance by increasing the activity of superoxide dismutase (SOD), catalase (CAT) and DPPH (l,l-diphenyl-2-picrylhydrazyl) radical scavenging ability to lower oxidative damage to lipids in plants. Ion beam implantation, therefore, provides an alternative method to enhance licorice drought tolerance.

  16. Treatment planning system for carbon ion radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Koyama-Ito, Hiroko [National Inst. of Radiological Sciences, Chiba (Japan)

    2002-06-01

    This paper describes the treatment planning (TP) and its peripheral system for carbon ion therapy that has been developed and in clinical use in recent two years at our institution. A new treatment planning system which is FOCUS customized to our irradiation system will be launched in clinical use soon. A new DICOM based PACS has been developed and in use. Now MRI, PET images are ready to be utilized for patient definition with image fusion functionality of radiotherapy TP. We implemented the exchange functionality of TP data specified by RTOG 3D QA Center in FOCUS, Pinnacle3 and heavy ion TP. Target volume and normal structure contours and dose distributions are exchangeable. A database system of carbon ion therapy dedicated to analysis of therapy data has been designed and implemented. All accessible planning data and treatment records of more than 1000 patients treated for seven and half years have been archived. The system has a DICOM RT sever and a database for miscellaneous text data. Limited numbers of private attributes were introduced for ion therapy specific objects. On-line as well as manual registration along with edit functionalities is prepared. Standard web browser is used to search and retrieve information. A DICOM RT viewer has been developed to view and retrieve RT images, dose distributions and structure set. These system described above are all designed to conform to the up-to-date standards of radiation therapy so as to be bases of the future development of the therapy at our institution. (author)

  17. Clinical advantages of carbon-ion radiotherapy

    Science.gov (United States)

    Tsujii, Hirohiko; Kamada, Tadashi; Baba, Masayuki; Tsuji, Hiroshi; Kato, Hirotoshi; Kato, Shingo; Yamada, Shigeru; Yasuda, Shigeo; Yanagi, Takeshi; Kato, Hiroyuki; Hara, Ryusuke; Yamamoto, Naotaka; Mizoe, Junetsu

    2008-07-01

    Carbon-ion radiotherapy (C-ion RT) possesses physical and biological advantages. It was started at NIRS in 1994 using the Heavy Ion Medical Accelerator in Chiba (HIMAC); since then more than 50 protocol studies have been conducted on almost 4000 patients with a variety of tumors. Clinical experiences have demonstrated that C-ion RT is effective in such regions as the head and neck, skull base, lung, liver, prostate, bone and soft tissues, and pelvic recurrence of rectal cancer, as well as for histological types including adenocarcinoma, adenoid cystic carcinoma, malignant melanoma and various types of sarcomas, against which photon therapy could be less effective. Furthermore, when compared with photon and proton RT, a significant reduction of overall treatment time and fractions has been accomplished without enhancing toxicities. Currently, the number of irradiation sessions per patient averages 13 fractions spread over approximately three weeks. This means that in a carbon therapy facility a larger number of patients than is possible with other modalities can be treated over the same period of time.

  18. CEMS-investigations of AISI M2 steel after nitrogen plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Uglov, V.V. E-mail: info@research.bsu.unibel.by; Kholmetskii, A.L.; Kuleshov, A.K.; Fedotova, J.A.; Rusalsky, D.P.; Khodasevich, V.V.; Ruebenbauer, K.; Richter, E.; Guenzel, R.; Parascandola, S

    1999-01-02

    Plasma-immersion ion implantation (PIII) and high-current ion implantation (HCII) of nitrogen into M2 steel were carried out. The formation of a multilayer system consisting of a surface layer of austenite on top of {epsilon}-Fe{sub 3}N nitride precipitates was manifested in M2 steel after PIII. HCII forms a thick (more than 14 {mu}m) layer with {epsilon}-Fe{sub 3}N precipitates. Apparently, the formation of the austenite layer after PIII is connected with a local tempering of the steel surface by the pulsed nitrogen ion beam.

  19. Investigation of Donor and Acceptor Ion Implantation in AlN

    Energy Technology Data Exchange (ETDEWEB)

    Osinsky, Andrei [Agnitron Technology Inc., Eden Prairie, MN (United States)

    2015-09-16

    AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular interest because of its wide bandgap of ~6.1eV which is ideal for power electronic device applications in extreme environments which requires high dose ion implantation. One of the major challenges that need to be addressed to achieve full utilization of AlN for opto and microelectronic applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it allows for selected-area doping of semiconductors due to its high spatial and dose control and its high throughput capability. Active layers in the semiconductor are created by implanting a dopant species followed by very high temperature annealing to reduce defects and thereby activate the dopants. Recovery of implant damage in AlN requires excessively high temperature. In this SBIR program we began the investigation by simulation of ion beam implantation profiles for Mg, Ge and Si in AlN over wide dose and energy ranges. Si and Ge are implanted to achieve the n-type doping, Mg is investigated as a p-type doping. The simulation of implantation profiles were performed in collaboration between NRL and Agnitron using a commercial software known as Stopping and Range of Ions in Matter (SRIM). The simulation results were then used as the basis for ion implantation of AlN samples. The implanted samples were annealed by an innovative technique under different conditions and evaluated along the way. Raman spectroscopy and XRD were used to determine the crystal quality of the implanted samples, demonstrating the effectiveness of annealing in removing implant induced damage. Additionally, SIMS was used to verify that a nearly uniform doping profile was achieved near the sample surface. The electrical characteristics

  20. Doping of C[sub 60] films after ion implantation. Dopage de films de C[sub 60] par implantation ionique

    Energy Technology Data Exchange (ETDEWEB)

    Trouillas, P.; Ratier, B.; Moliton, A. (LEPOFI, Limoges (France). Faculte des Sciences); Gauneau, M. (Centre National d' Etudes des Telecommunications (CNET), 22 - Lannion (France)); Bernier, P. (Montpellier-2 Univ., 34 (France))

    1994-10-01

    With C[sub 60] films, ion implantation of inert ions (argon) gives rise to conduction processes ([sigma] > 10[sup 4] [Omega][sup -1] cm[sup -1]) related to degradation only in the case where implantation is performed at a high temperature (T = 560 K); no sample degeneracy ([sigma] < 10[sup -4] [Omega][sup -1] cm[sup -1]) appears after argon implantation at room temperature, but doping effects ([sigma] [approx] 1 [Omega][sup -1] cm[sup -1]) are obtained after implantation at room temperature with chemically active ions; with a fluence of the order of 10[sup 15] ions cm[sup -2], the thermoelectric power then appears negative with potassium or phosphorus ions, and positive with bromine or boron ions. (Author).

  1. Nanostructure and Properties of Corrosion Resistance in C+Ti Multi-Ion-Implanted Steel

    Institute of Scientific and Technical Information of China (English)

    张通和; 吴瑜光; 刘安东; 张旭; 王晓妍

    2003-01-01

    The corrosion and pitting corrosion resistance of C+ Ti dual and C+Ti+C ternary implanted H13 steel were studied by using a multi-sweep cyclic voltammetry and a scanning electron microscope. The effects of phase formation on corrosion and pitting corrosion resistance were explored. The x-ray diffraction analysis shows that the nanometer-sized precipitate phases consist of compounds of Fe2 Ti, TiC, Fe2C and Fe3 C in dual implanted layer and even in ternary implanted layer. The passivation layer consists of these nanometer phases. It has been found that the corrosion and pitting corrosion resistance of dual and ternary implanted H13 steel are improved extremely. The corrosion resistance of ternary implanted layer is better than that of dual implantations and is enhanced with the increasing ion dose. When the ion dose of Ti is 6 × 1017/cm2 in the ternary implantation sample, the anodic peak current density is 95 times less than that of the H13 steel. The pitting corrosion potential of dual and ternary implantation samples is in the range from 55mV to 160mV which is much higher than that of the H13 steel. The phases against the corrosion and pitting corrosion are nanometer silkiness phases.

  2. Silicon defects characterization for low temperature ion implantation and RTA process

    Energy Technology Data Exchange (ETDEWEB)

    Martirani Paolillo, Diego; Margutti, Giovanni; De Biase, Marco [LFoundry s.r.l. Avezzano (Italy); Barozzi, Mario; Giubertoni, Damiano [Fondazione Bruno Kessler, Trento (Italy); Spaggiari, Claudio [Axcelis Technologies Srl, Agrate Brianza (Italy)

    2015-12-15

    In the last years a lot of effort has been directed in order to reduce silicon defects eventually formed during the ion implantation/anneal sequence used in the fabrication of CMOS devices. In this work we explored the effect of ion implant dose rate and temperature on the formation of silicon defects for high fluence {sup 49}BF{sub 2} implantations. The considered processes (implantation and annealing) conditions are those typically used to form the source/drain regions of p-channel transistors in the submicron technology node and will be detailed in the document. Characterization of implant damage and extended silicon defects left after anneal has been performed by TEM. Dopant distribution and dopant activation has been investigated by SIMS and SRP analysis. We have verified that implant dose rate and temperature modulate the thickness of the amorphous silicon observed after implant, as well as the concentrations of silicon defects left after anneal. Effect of high dose rate low temperature implantation on product device was also evaluated, showing a reduction of leakage current on p-channel transistors. Experimental set up, results and possible explanation will be reported and discussed in the paper.

  3. Silicon defects characterization for low temperature ion implantation and RTA process

    Science.gov (United States)

    Martirani Paolillo, Diego; Margutti, Giovanni; De Biase, Marco; Barozzi, Mario; Giubertoni, Damiano; Spaggiari, Claudio

    2015-12-01

    In the last years a lot of effort has been directed in order to reduce silicon defects eventually formed during the ion implantation/anneal sequence used in the fabrication of CMOS devices. In this work we explored the effect of ion implant dose rate and temperature on the formation of silicon defects for high fluence 49BF2 implantations. The considered processes (implantation and annealing) conditions are those typically used to form the source/drain regions of p-channel transistors in the submicron technology node and will be detailed in the document. Characterization of implant damage and extended silicon defects left after anneal has been performed by TEM. Dopant distribution and dopant activation has been investigated by SIMS and SRP analysis. We have verified that implant dose rate and temperature modulate the thickness of the amorphous silicon observed after implant, as well as the concentrations of silicon defects left after anneal. Effect of high dose rate low temperature implantation on product device was also evaluated, showing a reduction of leakage current on p-channel transistors. Experimental set up, results and possible explanation will be reported and discussed in the paper.

  4. Persistent photoconductivity in oxygen-ion implanted KNbO3 bulk single crystal

    Science.gov (United States)

    Tsuruoka, R.; Shinkawa, A.; Nishimura, T.; Tanuma, C.; Kuriyama, K.; Kushida, K.

    2016-12-01

    Persistent Photoconductivity (PPC) in oxygen-ion implanted KNbO3 ([001] oriented bulk single crystals; perovskite structure; ferroelectric with a band gap of 3.16 eV) is studied in air at room temperature to prevent the degradation of its crystallinity caused by the phase transition. The residual hydrogens in un-implanted samples are estimated to be 5×1014 cm-2 from elastic recoil detection analysis (ERDA). A multiple-energy implantation of oxygen ions into KNbO3 is performed using energies of 200, 400, and 600 keV (each ion fluence:1.0×1014 cm-2). The sheet resistance varies from >108 Ω/□ for an un-implanted sample to 1.9×107 Ω/□ for as-implanted one, suggesting the formation of donors due to hydrogen interstitials and oxygen vacancies introduced by the ion implantation. The PPC is clearly observed with ultraviolet and blue LEDs illumination rather than green, red, and infrared, suggesting the release of electrons from the metastable conductive state below the conduction band relating to the charge states of the oxygen vacancy.

  5. The biomedical properties of polyethylene terephthalate surface modified by silver ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jin [Key Laboratory for Advanced Technologies of Materials of Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Li Jianxin [Key Laboratory for Advanced Technologies of Materials of Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Shen Liru [Southwestern Institute of Physics, Chengdu, Sichuan 610041 (China); Ling Ren [Key Laboratory for Advanced Technologies of Materials of Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Xu Zejin [Southwestern Institute of Physics, Chengdu, Sichuan 610041 (China); Zhao Ansha [Key Laboratory for Advanced Technologies of Materials of Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Leng Yongxiang [Key Laboratory for Advanced Technologies of Materials of Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Huang Nan [Key Laboratory for Advanced Technologies of Materials of Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)]. E-mail: nhuang@263.net

    2007-04-15

    Polyethylene terephthalate (PET) film is modified by Ag ion implantation with a fluence 1 x 10{sup 16} ions/cm{sup 2}. The results of X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that silver has been successfully implanted into the surface of PET. The PET samples modified by silver ion implantation have significantly bactericidal property. The capacity of the staphylococcus epidermidis (SE) adhered on the Ag{sup +} implanted PET surface is 5.3 x 10{sup 6} CFU/ml, but the capacity of the SE adhered on the untreated PET film is 2.23 x 10{sup 7} CFU/ml. The thromboembolic property is evaluated by in vitro platelet adhesion test, and there is not statistically difference between the untreated PET and the Ag{sup +} implanted PET for the number of adhered and activated platelets. The PET implanted by silver ion has not acute toxicity to endothelial cell (EC) which was evaluated by the release of lactate dehydrogenase (LDH) test.

  6. Preparation of phosphorus-containing silica glass microspheres for radiotherapy of cancer by ion implantation.

    Science.gov (United States)

    Kawashita, M; Miyaji, F; Kokubo, T; Suzuki, Y; Kajiyama, K

    1999-08-01

    A chemically durable glass microsphere containing a large amount of phosphorus is useful for in situ irradiation of cancers, since they can be activated to be a beta-emitter with a half-life of 14.3 d by neutron bombardment. When the activated microspheres are injected to the tumors, they can irradiate the tumors directly with beta-rays without irradiating neighboring normal tissues. In the present study, P+ ion was implanted into silica glass microspheres of 25 microm in average diameter at 50 keV with nominal doses of 2.5 x 10(16) and 3.35 x 10(1)6 cm(-2). The glass microspheres were put into a stainless container and the container was continuously shaken during the ion implantation so that P+ ion was implanted into them uniformly. The implanted phosphorus was localized in deep regions of the glass microsphere with the maximum concentration at about 50 nm depth without distributing up to the surface even for a nominal dose of 3.35 x 10(16) cm(-2). Both samples released phosphorus and silicon into water at 95 degrees C for 7 d. On the basis of the previous study on P+-implanted silica glass plates, the silica glass microspheres containing more phosphorus which is desired for actual treatment could be obtained, without losing high chemical durability, if P+ ion would be implanted at higher energy than 50 keV to be localized in deeper region.

  7. Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

    Science.gov (United States)

    Lee, K. S.; Yoo, D. H.; Son, G. H.; Lee, C. H.; Noh, J. H.; Han, J. J.; Yu, Y. S.; Hyung, Y. W.; Yang, J. K.; Song, D. G.; Lim, T. J.; Kim, Y. K.; Lee, S. C.; Lee, H. D.; Moon, J. T.

    2006-11-01

    Germanium ion implantation was investigated for crystallinity enhancement during solid phase epitaxial regrowth (SPE) using high current implantation equipment. Electron back-scatter diffraction(EBSD) measurement showed numerical increase of 19 percent of signal, which might be due to pre-amorphization effect on silicon layer deposited by LPCVD process with germanium ion implantation. On the other hand, electrical property such as off-leakage current of NMOS transistor degraded in specific regions of wafers, which implied non-uniform distribution of donor-type impurities into channel area. It was confirmed that arsenic atoms were incorporated into silicon layer during germanium ion implantation. Since the equipment for germanium pre-amorphization implantation(PAI) was using several source gases such as BF3 and AsH3, atomic mass unit(AMU) contamination during PAI of germanium with AMU 74 caused the incorporation of arsenic with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use germanium isotope of AMU 72 to suppress AMU contamination, however it led serious reduction of productivity because of decrease in beam current by 30 percent as known to be difference in isotope abundance. It was effective to use enriched germanium source gas with AMU 72 in order to improve productivity. Spatial distribution of arsenic impurities in wafers was closely related to hardware configuration of ion implantation equipment.

  8. Investigation of Carbon ion-implanted waveguides in tungsten bronze (Ca{sub 0.28}Ba{sub 0.72}){sub 0.25}(Sr{sub 0.6}Ba{sub 0.4}){sub 0.75}Nb{sub 2}O{sub 6} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Yang, E-mail: sdujy@163.com; Wang, Chuan-Kui; Li, Zong-Liang; Ren, Ying-Ying

    2014-09-01

    Highlights: •Fabrication of planar waveguides in CSBN25 crystal by MeV C ion implantation at low fluence. •The extraordinary index has a small positive change in the surface region after the implantation. •The relation between index profile parameters and C{sup +} ion energy loss were considered. -- Abstract: Planar optical waveguides were fabricated in (Ca{sub 0.28}Ba{sub 0.72}){sub 0.25}(Sr{sub 0.6}Ba{sub 0.4}){sub 0.75}Nb{sub 2}O{sub 6} (CSBN25) crystal by 6.0-MeV C{sup +} ion implantation with fluences of 2, 4 and 6 × 10{sup 14} ions/cm{sup 2} at room temperature. The mode parameters, refractive indices profiles are measured and the refractive indices behavior in the waveguide region is discussed. The shape of nuclear energy loss distribution of the C{sup +} implantation was similar to those of the waveguide refractive index profiles, which means an inherent relationship between the waveguide formation and the energetic energy deposition. The extraordinary refractive index has a small positive change in the surface region after the implantation.

  9. Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations

    Science.gov (United States)

    Pribat, D.; Dieumegard, D.; Croset, M.; Cohen, C.; Nipoti, R.; Siejka, J.; Bentini, G. G.; Correra, L.; Servidori, M.

    1983-05-01

    The purpose of this work is twofold: (i) to study the damage induced by ion implantation, with special attention to low implanted doses; (ii) to study the efficiency of annealing techniques — particularly incoherent light annealing — in order to relate the electrical activity of implanted atoms to damage annealing. We have used three methods to study the damage induced by ion implantation: (1) RBS (or nuclear reactions) in random or in channeling geometry (2) RX double crystal diffractometry and (3) electrical measurements (free carrier profiling). Damage induced by silicon implantation at doses >10 14at/cm 2 can be monitored by all three techniques. However, the sensitivity of RBS is poor and hence this technique is not useful for low implantation doses. As device technology requires dopant levels in the range of 5 × 10 12 atoms/cm 2, we are particularly interested to the development of analytical techniques able to detect the damage at this implantation level. The sensitivity of such techniques was checked by studying homogeneously doped (5 × 10 16 e -/cm 3) and semi-insulating GaAs samples implanted with 3 × 10 12 silicon atoms/cm 2 at 150 keV. The substrate temperature during implantation was 200°C. The damage produced in these samples and its subsequent annealing are evidenced by strong changes in X-ray double crystal diffraction spectra. This method hence appears as a good monitoring technique. Annealing of the implanted layers has been performed using incoherent light sources (xenon lamps) either in flash or continuous conditions. Reference samples have also been thermally annealed (850°C, 20 min in capless conditions). The results are compared, and the electrical carrier profiles obtained after continuous incoherent light irradiation indicate that the implanted silicon atoms are almost dully activated. The advantages and disadvantages of incoherent light irradiation are discussed (surface oxidation, surface damage) in comparison with standard

  10. A new approach for transition metal free magnetic SiC: Defect induced magnetism after self-ion implantation

    Science.gov (United States)

    Kummari, Venkata Chandra Sekhar

    SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (disorders calculated along the c-axis (LO mode) and perpendicular to c-axis (TO mode) in 4H-SiC are found to be similar. Furthermore, the results obtained from

  11. Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

    Institute of Scientific and Technical Information of China (English)

    Yonggang Wang(王勇刚); Xiaoyu Ma(马骁宇); Bin Zhong(钟斌); Desong Wang(王德松); Qiulin Zhang(张秋琳); Baohua Feng(冯宝华)

    2004-01-01

    We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semiinsulating GaAs wafer. The wafer was implanted with 400-kev As+ in the concentration of 1016 ions/cm2.To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 ℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films,respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

  12. Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

    Science.gov (United States)

    Li, Q.; Barik, S.; Tan, H. H.; Jagadish, C.

    2008-10-01

    Temperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of carrier distribution within the localized QD states to the luminescence linewidth decreases after ion-implantation enhanced intermixing. The effect of doses and types of ions used for implantation were also investigated.

  13. Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Li, Q; Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra 0200 (Australia)], E-mail: qing.li@anu.edu.au

    2008-10-21

    Temperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of carrier distribution within the localized QD states to the luminescence linewidth decreases after ion-implantation enhanced intermixing. The effect of doses and types of ions used for implantation were also investigated.

  14. Raman scattering probe of ion-implanted and pulse laser annealed GaAs

    Science.gov (United States)

    Verma, Prabhat; Jain, K. P.; Abbi, S. C.

    1996-04-01

    We report Raman scattering studies of phosphorus-ion-implanted and subsequently pulse laser annealed (PLA) GaAs. The threshold value of implantation fluence for the disappearance of one-phonon modes in the Raman spectrum of ion-implanted GaAs sample is found to be greater than that for the two-phonon modes by an order of magnitude. The phonon correlation length decreases with increasing disorder. The lattice reconstruction process during PLA creates microcrystallites for incomplete annealing, whose sizes can be given by the phonon correlation lengths, and are found to increase with the annealing power density. The intensity ratio of the Raman spectra corresponding to the allowed longitudinal-optical (LO)-phonon mode to the forbidden transverse-optical (TO)-phonon mode, ILO/ITO, is used as a quantitative measure of crystallinity in the implantation and PLA processes. The threshold annealing power density is estimated to be 20 MW/cm2 for 70 keV phosphorus-ion-implanted GaAs at a fluence of 5×1015 ions/cm2. The localized vibrational mode of phosphorus is observed in PLA samples for fluences above 1×1015 ions/cm2.

  15. Plasma immersion ion implantation for the efficient surface modification of medical materials

    Energy Technology Data Exchange (ETDEWEB)

    Slabodchikov, Vladimir A., E-mail: dipis1991@mail.ru; Borisov, Dmitry P., E-mail: borengin@mail.ru; Kuznetsov, Vladimir M., E-mail: kuznetsov@rec.tsu.ru [National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate. The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.

  16. Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry

    Science.gov (United States)

    Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitry; Hartig, Carsten

    2016-03-01

    Optical metrology techniques such as ellipsometry and reflectometry are very powerful for routine process monitoring and control in the modern semiconductor manufacturing industry. However, both methods rely on optical modeling therefore, the optical properties of all materials in the stack need to be characterized a priori or determined during characterization. Some processes such as ion implantation and subsequent annealing produce slight variations in material properties within wafer, wafer-to-wafer, and lot-to-lot; such variation can degrade the dimensional measurement accuracy for both unpatterned optical measurements as well as patterned (2D and 3D) scatterometry measurements. These variations can be accounted for if the optical model of the structure under investigation allows one to extract not just dimensional but also material information already residing within the optical spectra. This paper focuses on modeling of ion implanted and annealed poly Si stacks typically used in high-k technology. Monitoring of ion implantation is often a blind spot in mass production due to capability issues and other limitations of common methods. Typically, the ion implantation dose can be controlled by research-grade ellipsometers with extended infrared range. We demonstrate that multi-channel spectroscopic reflectometry can also be used for ion implant monitoring in the mass-production environment. Our findings are applicable across all technology nodes.

  17. Corrosion behavior of low energy, high temperature nitrogen ion-implanted AISI 304 stainless steel

    Indian Academy of Sciences (India)

    M Ghorannevis; A Shokouhy; M M Larijani; S H Haji Hosseini; M Yari; A Anvari; M Gholipur Shahraki; A H Sari; M R Hantehzadeh

    2007-01-01

    This work presents the results of a low-energy nitrogen ion implantation of AISI 304 type stainless steel (SS) at a moderate temperature of about 500° C. The nitrogen ions are extracted from a Kauffman-type ion source at an energy of 30 keV, and ion current density of 100 A cm-2. Nitrogen ion concentration of 6 × 1017, 8 × 1017 and 1018 ions cm-2, were selected for our study. The X-ray diffraction results show the formation of CrN polycrystalline phase after nitrogen bombardment and a change of crystallinity due to the change in nitrogen ion concentration. The secondary ion mass spectrometry (SIMS) results show the formation of CrN phases too. Corrosion test has shown that corrosion resistance is enhanced by increasing nitrogen ion concentration.

  18. Corrosion behaviour of ion implanted aluminium alloy in 0.1 M NaCl electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Chu, J.W.; Evans, P.J. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Aluminum and its alloys are widely used in industry because of their light weight, high strength and good corrosion resistance which is due to the formation of a protective oxide layer. However, under saline conditions such as those encountered in marine environments, this group of metals are vulnerable to localised degradation in the form of pitting corrosion. This type of corrosion involves the adsorption of an anion, such as chlorine, at the oxide solution interface. Ion implantation of metal ions has been shown to improve the corrosion resistance of a variety of materials. This effect occurs : when the implanted species reduces anion adsorption thereby decreasing the corrosion rate. In this paper we report on the pitting behavior of Ti implanted 2011 Al alloy in dilute sodium chloride solution. The Ti implanted surfaces exhibited an increased pitting potential and a reduced oxygen uptake. 5 refs., 3 figs.

  19. EFFECTS OF COPPER ION IMPLANTATION ON ANTIBACTERIAL ACTIVITY OF AISI420 STAINLESS STEEL

    Institute of Scientific and Technical Information of China (English)

    Z.G. Dan; H.W. Ni; B.F. Xu; J. Xiong; P. Y. Xiong

    2005-01-01

    Antibacterial activity of AISI420 stainless steel (SS) implanted by copper was investigated. Ions extracted from a metal vapor vacuum arc (MEVVA) are sourced with 100keV energy and a dose range from 0.2×1017 to 2.0×1017ions .cm-2. The saturation dose of Cu implantation in AISI420 SS and Cu surface concentration were calculated at the energy of 100keV. The effect of dose on the antibacterial activity was analyzed. Results of antibacterial test show that the saturation dose is the optimum implantation dose for best antibacterial activity, which is above 99% against both Escherichia coli and Staphylococcus aureus. Novel phases such as Fe4Cu3 and Cu9.9Fe0.1 were found in the implanted layer by glancing angle X-ray diffraction (GXRD). The antibacterial activity of AISI420 SS attributes to Cu-contained phase.

  20. Selective Growth of Graphene by Pulsed Laser Annealing Ion Implanted SiC

    Science.gov (United States)

    Berke, Kara; Wang, Xiaotie; Rudawski, Nick; Venkatachalam, Dinesh; Fridmann, Joel; Gila, Brent; Ren, Fan; Elliman, Rob; Hebard, Arthur; Appleton, Bill

    2014-03-01

    We report a method for site-selective graphene growth on SiC for direct nano-scale patterning of graphene. Crystalline SiC was implanted with Si and C ions to amorphize the sample surface, then subjected to pulsed laser annealing (PLA); graphene growth occurred only where ions were implanted. PLA parameters including the fluence, number of pulses, and annealing environment were investigated to optimize the growth process. Our previous work involving Au, Cu, and Ge implants in SiC suggested that both the implanted species and surface amorphization affect graphene growth. In this work, we show that surface amorphization alone, without the presence of foreign ionic species, can be used with PLA to create site-selective graphene growth on SiC. Samples were characterized using Raman spectroscopy and cross-sectional transmission electron microscopy. also affiliated with Raith USA, Incorporated.

  1. Application of Coaxial Ion Gun for Film Generation and Ion Implantation

    Science.gov (United States)

    Takatsu, Mikio; Asai, Tomohiko; Kurumi, Satoshi; Suzuki, Kaoru; Hirose, Hideharu; Masutani, Shigeyuki

    A magnetized coaxial plasma gun (MCPG) is here utilized for deposition on high-melting-point metals. MCPGs have hitherto been studied mostly in the context of nuclear fusion research, for particle and magnetic helicity injection and spheromak formation. During spheromak formation, the electrode materials are ionized and mixed into the plasmoid. In this study, this ablation process by gun-current sputtering is enhanced for metallic thin-film generation. In the proposed system geometry, only ionized materials are electromagnetically accelerated by the self-Lorentz force, with ionized operating gas as a magnetized thermal plasmoid, contributing to the thin-film deposition. This reduces the impurity and non-uniformity of the deposited thin-film. Furthermore, as the ions are accelerated in a parallel direction to the injection axis, vertical implantation of the ions into the substrate surface is achieved. To test a potential application of the developed system, experiments were conducted involving the formation of a buffer layer on hard ceramics, for use in dental materials.

  2. Surface engineering of a Zr-based bulk metallic glass with low energy Ar- or Ca-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lu; Zhu, Chao [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996-2100 (United States); Muntele, Claudiu I. [Center for Irradiation Materials, Alabama A and M University, P. O. Box 1447, Normal, AL 35762 (United States); Zhang, Tao [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Department of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Liaw, Peter K. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996-2100 (United States); He, Wei, E-mail: whe5@utk.edu [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996-2100 (United States); Department of Mechanical, Aerospace and Biomedical Engineering, University of Tennessee, Knoxville, TN 37996-2210 (United States)

    2015-02-01

    In the present study, low energy ion implantation was employed to engineer the surface of a Zr-based bulk metallic glass (BMG), aiming at improving the biocompatibility and imparting bioactivity to the surface. Ca- or Ar-ions were implanted at 10 or 50 keV at a fluence of 8 × 10{sup 15} ions/cm{sup 2} to (Zr{sub 0.55}Al{sub 0.10}Ni{sub 0.05}Cu{sub 0.30}){sub 99}Y{sub 1} (at.%) BMG. The effects of ion implantation on material properties and subsequent cellular responses were investigated. Both Ar- and Ca-ion implantations were suggested to induce atom displacements on the surfaces according to the Monte-Carlo simulation. The change of atomic environment of Zr in the surface regions as implied by the alteration in X-ray absorption measurements at Zr K-edge. X-ray photoelectron spectroscopy revealed that the ion implantation process has modified the surface chemical compositions and indicated the presence of Ca after Ca-ion implantation. The surface nanohardness has been enhanced by implantation of either ion species, with Ca-ion implantation showing more prominent effect. The BMG surfaces were altered to be more hydrophobic after ion implantation, which can be attributed to the reduced amount of hydroxyl groups on the implanted surfaces. Higher numbers of adherent cells were found on Ar- and Ca-ion implanted samples, while more pronounced cell adhesion was observed on Ca-ion implanted substrates. The low energy ion implantation resulted in concurrent modifications in atomic structure, nanohardness, surface chemistry, hydrophobicity, and cell behavior on the surface of the Zr-based BMG, which were proposed to be mutually correlated with each other. - Highlights: • Low energy ion implantation of a Zr-based BMG for bone implant applications • Concurrent modifications in surface structure and properties after irradiation • Promoted adhesion of bone-forming cells after Ar- or Ca-ion implantation.

  3. Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell.

    Science.gov (United States)

    Kim, Beom-Su; Kim, Jin Seong; Park, Young Min; Choi, Bo-Young; Lee, Jun

    2013-04-01

    Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3×10(16) ions/cm(2) was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity.

  4. Surface Properties of AZ31B Magnesium Alloy by Oxygen Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    WEI Chunbei; GONG Chunzhi; TIAN Xiubo; YANG Shiqin; Ricky K.Y.Fu; Paul K.CHU

    2009-01-01

    Oxygen plasma immersion ion implantation(PIII)has been conducted on AZ31B magnesium alloy using different bias voltages.The modified layer is mainly composed of MgO and some MgAl2O4.Results form Rutherford backscattering spectrometry(RBS)and X-ray photoelectron spectroscopy(XPS)indicate that the bias voltage has a significant impact on the structure of the films.The oxygen implant fluences and the thickness of the implanted layer increase with higher bias voltages.A high bias voltage such as 60 kV leads to an unexpected increments in the oxygen-rich layer's thickness compared to those of the samples implanted at 20 kV and 40 kV.The hardness is hardly enhanced by oxygen PIII.The corrosion resistance of magnesium alloy may be improved by a proper implantation voltage.

  5. Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Plasma immersion ion implantation (PIII) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the processand cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.

  6. Carbon-carbon composites for orthopedic prosthesis and implants. CRADA final report

    Energy Technology Data Exchange (ETDEWEB)

    Burchell, T D; Klett, J W; Strizak, J P [Oak Ridge National Lab., TN (United States); Baker, C [FMI, Biddeford, ME (United States)

    1998-01-21

    The prosthetic implant market is extensive. For example, because of arthritic degeneration of hip and knee cartilage and osteoporotic fractures of the hip, over 200,000 total joint replacements (TJRs) are performed in the United States each year. Current TJR devices are typically metallic (stainless steel, cobalt, or titanium alloy) and are fixed in the bone with polymethylacrylate (PMMA) cement. Carbon-carbon composite materials offer several distinct advantages over metals for TJR prosthesis. Their mechanical properties can be tailored to match more closely the mechanical properties of human bone, and the composite may have up to 25% porosity, the size and distribution of which may be controlled through processing. The porous nature of carbon-carbon composites will allow for the ingrowth of bone, achieving biological fixation, and eliminating the need for PMMA cement fixation.

  7. Laser plasma ion implantation and deposition of platinum for SiC-based hydrogen detector fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Fominski, V. Yu., E-mail: vyfominskij@mephi.ru [National Research Nuclear University MEPhI, Kashirskoe sh., 31, Moscow 115409 (Russian Federation); Grigoriev, S.N. [Moscow State University of Technology STANKIN, Vadkovskii per., 3a, Moscow 127005 (Russian Federation); Romanov, R.I. [National Research Nuclear University MEPhI, Kashirskoe sh., 31, Moscow 115409 (Russian Federation); Gnedovets, A.G. [Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Leninsky Prospect 49, Moscow 119991 (Russian Federation); Chernykh, P.N. [Lomonosov Moscow State University Scobeltsyn Institute of Nuclear Physics, 1(2) Leninskie Gory, GSP-1, Moscow 119991 (Russian Federation)

    2013-10-15

    Highlights: •Pt ion implantation and film deposition were carried out using pulsed laser plume. •Experimental diagnostics and modeling of Pt ion implantation in SiC were performed. •Mechanism of Pt depth distribution in SiC substrate was determined. •Layered structure of Pt on Pt-doped SiC crystal was used to detect hydrogen at 500 °C. •The response of sensor to hydrogen was pronounced and stable after long-term tests. -- Abstract: A pulsed plasma plume obtained by pulsed laser irradiation of a Pt target was used to fabricate a hydrogen sensor on a 6H–SiC single crystal by means of ion implantation followed by thin film deposition. To realize the ion implantation, high voltage pulses with positive polarity were applied to the Pt target when the laser plasma expanded from the target to the SiC substrate. Experimental diagnostics of pulsed ion beams extracted from laser-produced plasma were performed and the structure of the SiC crystal after high-temperature (500 °C) ion implantation was studied by Rutherford backscattering spectroscopy of {sup 4}He{sup +} ions. At the same time, a one-dimensional model of the plasma movement in a pulsed electric field was developed and simulations were carried out using the particle-in-cell method. Modeling allowed determination of the ion energy distribution depending on the delay time of the high voltage pulse after the laser pulse. The calculated energy distribution of Pt ions was used to predict the depth profile of implanted Pt ions in the SiC substrate. The predicted profile agreed sufficiently well with the experimentally measured depth distribution of Pt in the SiC substrate. To characterize the fabricated SiC sensor, the current flow through a barrier structure was studied. The volt–ampere characteristics of the structure were measured in air and in a mixture of air and hydrogen (2%) at a temperature of 500 °C. The characteristic value of the change in voltage exceeded 2 V at the bias current of 1 mA when

  8. RTV silicone rubber surface modification for cell biocompatibility by negative-ion implantation

    Science.gov (United States)

    Zheng, Chenlong; Wang, Guangfu; Chu, Yingjie; Xu, Ya; Qiu, Menglin; Xu, Mi

    2016-03-01

    A negative cluster ion implantation system was built on the injector of a GIC4117 tandem accelerator. Next, the system was used to study the surface modification of room temperature vulcanization silicone rubber (RTV SR) for cell biocompatibility. The water contact angle was observed to decrease from 117.6° to 99.3° as the C1- implantation dose was increased to 1 × 1016 ions/cm2, and the effects of C1-, C2- and O1- implantation result in only small differences in the water contact angle at 3 × 1015 ions/cm2. These findings indicate that the hydrophilicity of RTV SR improves as the dose is increased and that the radiation effect has a greater influence than the doping effect on the hydrophilicity. There are two factors influence hydrophilicity of RTV: (1) based on the XPS and ATR-FTIR results, it can be inferred that ion implantation breaks the hydrophobic functional groups (Sisbnd CH3, Sisbnd Osbnd Si, Csbnd H) of RTV SR and generates hydrophilic functional groups (sbnd COOH, sbnd OH, Sisbnd (O)x (x = 3,4)). (2) SEM reveals that the implanted surface of RTV SR appears the micro roughness such as cracks and wrinkles. The hydrophilicity should be reduced due to the lotus effect (Zhou Rui et al., 2009). These two factors cancel each other out and make the C-implantation sample becomes more hydrophilic in general terms. Finally, cell culture demonstrates that negative ion-implantation is an effective method to improve the cell biocompatibility of RTV SR.

  9. ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

    Energy Technology Data Exchange (ETDEWEB)

    Isoya, J. [University of Library and Information Science, Tsukuba, Ibaraki (Japan); Kanda, H.; Morita, Y.; Ohshima, T.

    1997-03-01

    Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type IIa implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure. (author)

  10. Blistering in alloy Ti–6Al–4V from H+ ion implantation

    Indian Academy of Sciences (India)

    B K Singh; V Singh

    2010-04-01

    The effect of H+ ion implantation on surface morphology of the titanium alloy, Ti–6Al–4V, was studied, following H+ ion implantation of 150 keV and 250 keV energy to fluence of 2.6 × 1018 cm-2 and 2.5 × 1019 cm-2, respectively at ambient temperature. No detectable change was observed in surface features of either of the above specimen immediately after the implantation. However, vein like features (VLF) were observed to appear on the surface of the sample, implanted at 150 keV to a fluence of 2.6 × 1018 cm-2, following natural ageing at room temperature for 150 days. Subsequent annealing of the above naturally aged sample, at 423 K for 150 min under vacuum (10-3 torr), led to development of a macroblister. In sharp contrast in the other sample, implanted by H+ ions of higher energy (250 keV) to higher fluence of 2.5 × 1019 cm-2, neither there was any effect of natural ageing following the implantation nor that of subsequent annealing at 423 K and ageing on its surface morphology.

  11. Microstructural investigation of alumina implanted with 30 keV nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Shikha, Deep; Jha, Usha [Department of Applied Chemistry, BIT Mesra, Ranchi 835 215, Jharkhand (India); Sinha, S.K. [Department of Applied Physics, BIT Mesra, Ranchi 835 215, Jharkhand (India)], E-mail: sksinha@bitmesra.ac.in; Barhai, P.K. [Department of Applied Physics, BIT Mesra, Ranchi 835 215, Jharkhand (India); Sarkhel, G. [Department of Polymer Engineering, BIT Mesra, Ranchi 835 215, Jharkhand (India); Nair, K.G.M.; Dash, S.; Tyagi, A.K. [Material Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Kothari, D.C. [Department of Physics, Mumbai University, Vidyanagri, Santacruz (E), Mumbai 400 098 (India)

    2007-11-15

    Among ceramics, alumina is being widely used as biomaterials now these days. It is being used as hip joints, tooth roots etc. Ion implantation has been employed to modify its surface without changing it bulk properties. 30 keV nitrogen with varying ion dose ranging from 5 x 10{sup 15} ions/cm{sup 2} to 5 x 10{sup 17} ions/cm{sup 2} is implanted in alumina. Surface morphology has been studied with optical microscope and atomic force microscope (AFM). Improvement in brittleness has been observed with the increase in ion dose. Compound formation and changes in grain size have been studied using X-Ray diffraction (XRD). AlN compound formation is also observed by Fourier transform infrared spectroscopy (FTIR). The change in the grain size is related with the nanohardness and Hall-Petch relationship is verified.

  12. N{sup +} surface doping on nanoscale polymer fabrics via ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ho Wong, Kenneth Kar [Department of Medical Biophysics, University of Western Ontario, London, Ont., N6A 3K7 (Canada)]. E-mail: khwong@uwo.ca; Zinke-Allmang, Martin [Department of Physics and Astronomy, University of Western Ontario, London, Ont., N6A 3K7 (Canada); Wan Wankei [Department of Chemical and Biochemical Engineering, University of Western Ontario, London, Ont., N6A 3K7 (Canada); Graduate Program in Biomedical Engineering, The University of Western Ontario, London, Ont., N6A 3K7 (Canada)

    2006-08-15

    Non-woven poly(vinyl alcohol) (PVA) fabrics composed of small diameter ({approx}110 nm) fibers have been spun by an electrospinning technique and then have been modified by ion implantation. 1.7 MeV N{sup +} ion implantation with a dose of 1.2 x 10{sup 16} ions/cm{sup 2} was applied on the fabrics through a metal foil at room temperature. By using scanning electron microscopy (SEM), no surface morphology degradation has been observed on the fabric after the ion beam treatment. The diameter of the fibers has shrunk by 30% to about 74 nm. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) show that nitrogen surface doping was achieved and the formation of two new functional chemical groups (N-C=O and C-N) in the PVA is observed.

  13. DLTS of low-energy hydrogen ion implanted n-Si

    Energy Technology Data Exchange (ETDEWEB)

    Deenapanray, P.N.K

    2003-12-31

    We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 {mu}m of samples, which resulted in carrier compensation to depths exceeding 1 {mu}m. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.

  14. DLTS of low-energy hydrogen ion implanted n-Si

    Science.gov (United States)

    Deenapanray, Prakash N. K.

    2003-12-01

    We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths exceeding 1 μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.

  15. Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, A. [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); El-Saftawy, A.A., E-mail: aama1978@yahoo.com [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Aal, S.A. Abd El [Central Lab. for Elemental & Isotopic Analysis, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Ghazaly, M. El [Physiology Department, College of Medicine, Taif University, P.O. 888, Taif (Saudi Arabia); Physics Department, Faculty of Science, Zagazig University, P.O. 44519, Zagazig (Egypt)

    2015-08-30

    Highlights: • A home-built plasma immersion ion implantation system was tested in modifying surfaces. • Wettability modifications within the energy range 10 keV implantation are not investigated elsewhere, up to our knowledge. • The wettability of Mylar and Makrofol surface was enhanced by the dual effect of ion implantation and plasma treatment. • The improved wettability was found to depend on both surface roughness and chemistry. • The adhesive bonding and surface energy of the polymers are improved. - Abstract: Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

  16. Retardation of surface corrosion of biodegradable magnesium-based materials by aluminum ion implantation

    Science.gov (United States)

    Wu, Guosong; Xu, Ruizhen; Feng, Kai; Wu, Shuilin; Wu, Zhengwei; Sun, Guangyong; Zheng, Gang; Li, Guangyao; Chu, Paul K.

    2012-07-01

    Aluminum ion implantation is employed to modify pure Mg as well as AZ31 and AZ91 magnesium alloys and their surface degradation behavior in simulated body fluids is studied. Polarization tests performed in conjunction with scanning electron microscopy (SEM) reveal that the surface corrosion resistance after Al ion implantation is improved appreciably. This enhancement can be attributed to the formation of a gradient surface structure with a gradual transition from an Al-rich oxide layer to Al-rich metal layer. Compared to the high Al-content magnesium alloy (AZ91), a larger reduction in the degradation rate is achieved from pure magnesium and AZ31. Our results reveal that the surface corrosion resistance of Mg alloys with no or low Al content can be improved by Al ion implantation.

  17. Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials.

    Science.gov (United States)

    Hofmann, F; Mason, D R; Eliason, J K; Maznev, A A; Nelson, K A; Dudarev, S L

    2015-11-03

    Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying with transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.

  18. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  19. Photoemission studies of amorphous silicon induced by P + ion implantation

    Science.gov (United States)

    Petö, G.; Kanski, J.

    1995-12-01

    An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

  20. Copper nanoparticles synthesized in polymers by ion implantation

    DEFF Research Database (Denmark)

    Popok, Vladimir; Nuzhdin, Vladimir; Valeev, Valerij

    2015-01-01

    nanoparticles are observed to partly tower above the sample surface due to a side effect of high-fluence irradiation leading to considerable sputtering of polymers. Implantation and particle formation significantly change optical properties of both polymers reducing transmittance in the UV-visible range due...... to structural and compositional change as well as causing an absorption band related to localized surface plasmon resonance (LSPR) of the nanoparticles. The role of polymer type and its degradation under the implantation on LSPR is studied in order to optimize conditions for the formation of nanoplasmonic...

  1. Decrease in work function of transparent conducting ZnO tin films by phosphorus ion implantation.

    Science.gov (United States)

    Heo, Gi-Seok; Hong, Sang-Jin; Park, Jong-Woon; Choi, Bum-Ho; Lee, Jong-Ho; Shin, Dong-Chan

    2008-09-01

    To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time. Compared to as-deposited ZnO films, the work-function of phosphorus ion-implanted ZnO thin films is observed to be lower and decreases with increasing ion doses. It is likely that the zinc or oxygen vacancies are firstly filled with the implanted phosphorus ions. With further increased ions, free electrons are generated as Zn2+ sites are replaced by those ions or interstitial phosphorus ions increase at the lattice sites, the fermi level by which approaches the conduction band and thus the work function decreases. Those films exhibit the optical transmittance higher than 85% within the visible wavelength range (up to 800 nm).

  2. Study of Nickel Ion Release in Simulated Body Fluid from C+-IMPLANTED Nickel Titanium Alloy

    Science.gov (United States)

    Shafique, Muhammad Ahsan; Murtaza, G.; Saadat, Shahzad; Zaheer, Zeeshan; Shahnawaz, Muhammad; Uddin, Muhammad K. H.; Ahmad, Riaz

    2016-05-01

    Nickel ion release from NiTi shape memory alloy is an issue for biomedical applications. This study was planned to study the effect of C+ implantation on nickel ion release and affinity of calcium phosphate precipitation on NiTi alloy. Four annealed samples are chosen for the present study; three samples with oxidation layer and the fourth without oxidation layer. X-ray diffraction (XRD) spectra reveal amorphization with ion implantation. Proton-induced X-ray emission (PIXE) result shows insignificant increase in Ni release in simulated body fluid (SBF) and calcium phosphate precipitation up to 8×1013ions/cm2. Then Nickel contents show a sharp increase for greater ion doses. Corrosion potential decreases by increasing the dose but all the samples passivate after the same interval of time and at the same level of VSCE in ringer lactate solution. Hardness of samples initially increases at greater rate (up to 8×1013ions/cm2) and then increases with lesser rate. It is found that 8×1013ions/cm2 (≈1014) is a safer limit of implantation on NiTi alloy, this limit gives us lesser ion release, better hardness and reasonable hydroxyapatite incubation affinity.

  3. Oxygen ion implantation induced microstructural changes and electrical conductivity in Bakelite RPC detector material

    Science.gov (United States)

    Kumar, K. V. Aneesh; Ranganathaiah, C.; Kumarswamy, G. N.; Ravikumar, H. B.

    2016-05-01

    In order to explore the structural modification induced electrical conductivity, samples of Bakelite Resistive Plate Chamber (RPC) detector materials were exposed to 100 keV Oxygen ion in the fluences of 1012, 1013, 1014 and 1015 ions/cm2. Ion implantation induced microstructural changes have been studied using Positron Annihilation Lifetime Spectroscopy (PALS) and X-Ray Diffraction (XRD) techniques. Positron lifetime parameters viz., o-Ps lifetime and its intensity shows the deposition of high energy interior track and chain scission leads to the formation of radicals, secondary ions and electrons at lower ion implantation fluences (1012 to1014 ions/cm2) followed by cross-linking at 1015 ions/cm2 fluence due to the radical reactions. The reduction in electrical conductivity of Bakelite detector material is correlated to the conducting pathways and cross-links in the polymer matrix. The appropriate implantation energy and fluence of Oxygen ion on polymer based Bakelite RPC detector material may reduce the leakage current, improves the efficiency, time resolution and thereby rectify the aging crisis of the RPC detectors.

  4. RTV silicone rubber surface modification for cell biocompatibility by negative-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Chenlong [Key Laboratory of Beam Technology and Material Modification Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875 Beijing (China); Wang, Guangfu, E-mail: 88088@bnu.edu.cn [Key Laboratory of Beam Technology and Material Modification Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875 Beijing (China); Beijing Radiation Center, 100875 Beijing (China); Chu, Yingjie; Xu, Ya; Qiu, Menglin; Xu, Mi [Key Laboratory of Beam Technology and Material Modification Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, 100875 Beijing (China)

    2016-03-01

    Highlights: • The radiation effect has a greater influence than doping effect on the hydrophilicity of RTV SR. • The implanted ions result in a new surface atomic bonding state and morphology. • Generating hydrophilic functional groups is a reason for the improved cell biocompatibility. • The micro roughness makes the hydrophilicity should be reduced due to the lotus effect. • Cell culture demonstrates that negative-ion implantation can improve biocompatibility. - Abstract: A negative cluster ion implantation system was built on the injector of a GIC4117 tandem accelerator. Next, the system was used to study the surface modification of room temperature vulcanization silicone rubber (RTV SR) for cell biocompatibility. The water contact angle was observed to decrease from 117.6° to 99.3° as the C{sub 1}{sup −} implantation dose was increased to 1 × 10{sup 16} ions/cm{sup 2}, and the effects of C{sub 1}{sup −}, C{sub 2}{sup −} and O{sub 1}{sup −} implantation result in only small differences in the water contact angle at 3 × 10{sup 15} ions/cm{sup 2}. These findings indicate that the hydrophilicity of RTV SR improves as the dose is increased and that the radiation effect has a greater influence than the doping effect on the hydrophilicity. There are two factors influence hydrophilicity of RTV: (1) based on the XPS and ATR-FTIR results, it can be inferred that ion implantation breaks the hydrophobic functional groups (Si−CH{sub 3}, Si−O−Si, C−H) of RTV SR and generates hydrophilic functional groups (−COOH, −OH, Si−(O){sub x} (x = 3,4)). (2) SEM reveals that the implanted surface of RTV SR appears the micro roughness such as cracks and wrinkles. The hydrophilicity should be reduced due to the lotus effect (Zhou Rui et al., 2009). These two factors cancel each other out and make the C-implantation sample becomes more hydrophilic in general terms. Finally, cell culture demonstrates that negative ion-implantation is an effective method

  5. Molecule modification andmass deposition induced bythe implantation of lowenergy Fe+ ion beamsinto amino acids

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Fe+ ion beams with the energy of 110 keV were implanted into films of L(+)-cysteine (HSCH2CH(NH2)COOH). One of the single crystals grown in hydrochloric acid solution with the implanted samples through slow evaporation was structurally characterized by the X-ray crystallography. The crystal is monoclinic, space group C2, with a = 1.8534(4) nm, b = 0.5234(1) nm, c = 0.7212(1) nm, β= 103.72°, V = 0.67965(3) nm3, Z = 4, F(000) = 144.0, Dclac = 1.763 g@cm-3, μ(MoKα) = 1.06 mm-1, T = 293(2) K. R = 0.0379, wR = 0.0835 for 660 observed reflections (I > 2σ(I)). The structural formula of the crystal compound is (CH2CH(NH2)NO2)ClFe (Mr = 180.38 u). Products of heavy ion beam irradiation were purified and it was directly confirmed that the implanted Fe+ ions had been deposited in the novel molecules. The same doses of Fe+ ion beams of the same energy were implanted into films of L(+)-cysteine hydrochloride monohydrate. FTIR spectroscopy of the implanted samples proved that some of the original molecules were seriously damaged and significant modifications were induced.

  6. Peculiarities and application perspectives of metal-ion implants in glasses

    Energy Technology Data Exchange (ETDEWEB)

    Mazzoldi, P.; Gonella, F. [Padua Univ. (Italy). Dipt. di Fisica; Arnold, G.W. [Sandia National Labs., Albuquerque, NM (United States); Battaglin, G. [Venice Univ. (Italy). Dipt. di Chimica Fisica; Bertoncello, R. [Padua Univ. (Italy). Dipt. di Chimica Inorganica, Metallorganica e Analitica

    1993-12-31

    Ion implantation in insulators causes modifications in the refractive-index as a result of radiation damage, phase separation, or compound formation. As a consequence, light waveguides may be formed with interesting applications in the field of optoelectronics. Recently implantation of metals ions (e.g. silver, copper, gold, lead,...) showed the possibility of small radii colloidal particles formation, in a thin surface layer of the glass substrate. These particles exhibit an electron plasmon resonance which depends on the optical constants of the implanted metal and on the refractive-index of the glass host. The non-linear optical properties of such colloids, in particular the enhancement of optical Kerr susceptibility, suggest that the, ion implantation technique may play an important role for the production of all-optical switching devices. In this paper an analysis of the state-of-the-art of the research in this field will be presented in the framework of ion implantation in glass physics and chemistry.

  7. Synthesis of tantalum nitride diffusion barriers for Cu metal by plasma immersion ion implantation

    CERN Document Server

    Kumar, M; Kumar, D; George, P J; Paul, A K

    2002-01-01

    A Tantalum nitride diffusion barrier layer for copper metal was synthesized by Plasma Immersion Ion Implantation technique (PIII). Effect of nitrogen dose in Ta layer was investigated in improving its diffusion barrier properties. Silicon wafers coated with Ta were implanted with nitrogen at two different doses viz. 10$^{15}$ions/cm$^2$ and 10$^{17}$ions/cm$^2$ corresponding to low and high dose regime. High dose of implanted nitrogen ions in the film render it to become Ta(N), Thereafter a copper (Cu) layer was deposited on the samples to produce Cu/Ta(N)/Si structure. To evaluate the barrier properties of Ta(N) these samples were annealed up to 700$^\\circ$C for 30 minutes. Sheet resistance, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) measurements were carried out to investigate the effect of annealing. Low dose implanted Ta layer does not show any change in its diffusion barrier properties, while high dose implanted layer stops the diffusion of Cu metal through it at annealing temperature...

  8. Grain size effect on yield strength of titanium alloy implanted with aluminum ions

    Energy Technology Data Exchange (ETDEWEB)

    Popova, Natalya, E-mail: natalya-popova-44@mail.ru [Tomsk State University of Architecture and Building, 2, Solyanaya Sq., 634003, Tomsk (Russian Federation); Institute of Strength Physics and Materials Science, SB RAS, 2/4, Akademicheskii Ave., 634021, Tomsk (Russian Federation); Nikonenko, Elena, E-mail: vilatomsk@mail.ru [Tomsk State University of Architecture and Building, 2, Solyanaya Sq., 634003, Tomsk (Russian Federation); National Research Tomsk Polytechnic University, 30, Lenin Str., 634050, Tomsk (Russian Federation); Yurev, Ivan, E-mail: yiywork@mail.ru [Tomsk State University of Architecture and Building, 2, Solyanaya Sq., 634003, Tomsk (Russian Federation); Kalashnikov, Mark, E-mail: kmp1980@mail.ru [Institute of Strength Physics and Materials Science, SB RAS, 2/4, Akademicheskii Ave., 634021, Tomsk (Russian Federation); Kurzina, Irina, E-mail: kurzina99@mail.ru [National Research Tomsk State University, 36, Lenin Str., 634050, Tomsk (Russian Federation)

    2016-01-15

    The paper presents a transmission electron microscopy (TEM) study of the microstructure and phase state of commercially pure titanium VT1-0 implanted by aluminum ions. This study has been carried out before and after the ion implantation for different grain size, i.e. 0.3 µm (ultra-fine grain condition), 1.5 µm (fine grain condition), and 17 µm (polycrystalline condition). This paper presents details of calculations and analysis of strength components of the yield stress. It is shown that the ion implantation results in a considerable hardening of the entire thickness of the implanted layer in the both grain types. The grain size has, however, a different effect on the yield stress. So, both before and after the ion implantation, the increase of the grain size leads to the decrease of the alloy hardening. Thus, hardening in ultra-fine and fine grain alloys increased by four times, while in polycrystalline alloy it increased by over six times.

  9. Characterization of Ion Implanted and Laser Processed Wear Surfaces.

    Science.gov (United States)

    1986-04-22

    reactivity of the 8. E. Rabinowicz , "Friction and Wear of materials is very great, as was the case Materials", 75, John Wiley and Sons on the first...pass on the TiC/Ti disk fol- Inc., N. Y. (1966). lowing implantation . Severe stickslip, leading to high frictional losses, however, 9. Rabinowicz , E

  10. X-ray diffuse scattering investigation of defects in ion implanted and annealed silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.H.; Patel, J.R. [Stanford Univ., CA (United States)]|[Lawrence Berkeley National Lab., CA (United States); Beck, U.; Metzger, T.H. [Univ. Muenchen (Germany). Sektion Physik

    1998-12-31

    To characterize the point defects and point defect clusters introduced by ion implantation and annealing, the authors have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow the authors to characterize the nature of point defects or defect clusters introduced by ion implantation. They have also observed unexpected satellite peaks in the diffuse scattering tails. Possible causes for the occurrence of the peaks will be discussed.

  11. Metal-ion release from titanium and TiN coated implants in rat bonerefid="FN1">*

    Science.gov (United States)

    Ferrari, F.; Miotello, A.; Pavloski, L.; Galvanetto, E.; Moschini, G.; Galassini, S.; Passi, P.; Bogdanović, S.; Fazinić, S.; Jaksić, M.; Valković, V.

    1993-06-01

    Titanium is a good material for dental and orthopaedic implants, but many authors reported that it releases ions into the surrounding tissues and into the serum. Titanium nitride has good mechanical properties and chemical inertless and may be employed as an implant coating material. In this experiment, pure titanium and SiO 2 coated with TiN implants were inserted in the tibia of rats. After thirty days, the bones were taken and examined by a proton microprobe. TiN-coated implants showed a lower ion release into the bone compared with pure titanium. This suggests that TiN may be a good coating for endosseous implants.

  12. Effect of Nitrogen Ion Implantation on the Structure and Corrosion Resistance of Equiatomic NiTi Shape Memory Alloy

    Institute of Scientific and Technical Information of China (English)

    HUA Yingjie; WANG Chongtai; MENG Changgong; YANG Dazhi

    2006-01-01

    To protect the surface of NiTi from corrosion, an ion implantation method was proposed. In the present work, a surface oxidized sample was implanted with nitrogen at energy of 100 keV. The corrosion resistance property was examined by the anodic polarization method in a simulated body fluid (SBF) at a temperature of 37 ℃ and contrasted to non-implanted NiTi samples. The composition and structure of the implanted layers were investigated by XPS. The experimental results from the electrochemical measurements provide an evidence that the nitrogen ion-implantation increases the corrosion resistance of NiTi shape memory alloy.

  13. Carbon offers advantages as implant material in human body

    Science.gov (United States)

    Benson, J.

    1969-01-01

    Because of such characteristics as high strength and long-term biocompatability, aerospace carbonaceous materials may be used as surgical implants to correct pathological conditions in the body resulting from disease or injury. Examples of possible medical uses include bone replacement, implantation splints and circulatory bypass implants.

  14. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States); Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W. [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul [National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

    2015-11-28

    Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  15. Experimental study of dropwise condensation on plasma-ion implanted stainless steel tubes

    Energy Technology Data Exchange (ETDEWEB)

    Bani Kananeh, A.; Rausch, M.H.; Froeba, A.P.; Leipertz, A. [Lehrstuhl fuer Technische Thermodynamik (LTT), Universitaet Erlangen-Nuernberg, Am Weichselgarten 8, D-91058 Erlangen (Germany)

    2006-12-15

    Plasma-ion implantation was used to achieve stable dropwise condensation of saturated steam on stainless steel tubes. For the investigation of the efficiency of plasma-ion implantation regarding the condensation process a condenser was constructed in order to measure the heat flux density q-dot and the heat transfer coefficient h{sub c} for the condensation of steam on the outside surface of a single horizontal tube. For tubes implanted with a nitrogen ion dose of 10{sup 16} cm{sup -2}, the heat transfer coefficient h{sub c} was found to be larger, by a factor of 3.2, in comparison to values theoretically calculated by the corrected Nusselt film theory. The heat flux density q-dot and the heat transfer coefficient h{sub c} were found to increase with increasing ion dose and steam pressure. The heat transfer coefficient decreases with increasing surface subcooling as it has been found in former work for dropwise condensation on ion implanted vertical plates. (author)

  16. Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Szekeres, A. [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrova, S. [Department of Applied Physics, Technical University of Sofia, Kl. Ohridski 8, 1797 Sofia (Bulgaria); Petrik, P., E-mail: petrik@mfa.kfki.hu [MFA Institute for Technical Physics and Materials Science, TTK Research Centre for Natural Sciences, Konkoly Thege Rd. 29-33, 1121 Budapest (Hungary); Fodor, B. [MFA Institute for Technical Physics and Materials Science, TTK Research Centre for Natural Sciences, Konkoly Thege Rd. 29-33, 1121 Budapest (Hungary); Bakalova, S. [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

    2013-09-15

    The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implantation with different fluences up to 10{sup 15} cm{sup −2} are studied using spectroscopic ellipsometry and simulation of the distributions of the ions and implantation induced defects. The implantation was regarded to proceed into Si through the native SiO{sub 2}. Two-layer optical models are applied for examination of the composition and dielectric function behavior of the formed structures. The native oxide is found to be 3 nm thick. The thickness of the Si modified layer decreased 23 to 14 nm with ion fluence due to increased formation of highly hydrogenated surface region that hinder further H-penetration into the Si bulk, especially at the highest fluence. Shifts of the features in the obtained dielectric functions related with Si interband transitions at about 3.4 and 4.2 eV are found caused by process-induced tensile stress. The modified Si region is related rather to defects created by the ion implantation process than the projected range of hydrogen ions. The overall layer modification can be characterized by a low degree of amorphization (up to 5.8%), creation of structural defects and internal tensile stress.

  17. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; Snead, L.L.

    1995-12-31

    Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to {similar_to}7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of {similar_to}0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe{sup 2+} ions at RT produced amorphization in the implanted ion region after damage levels of {similar_to}1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He{sup +} ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC.

  18. The air oxidation behavior of lanthanum ion implanted zirconium at 500 deg. C

    CERN Document Server

    Peng, D Q; Chen, X W; Zhou, Q G

    2003-01-01

    The beneficial effect of lanthanum ion implantation on the oxidation behavior of zirconium at 500 deg. C has been studied. Zirconium specimens were implanted by lanthanum ions using a MEVVA source at energy of 40 keV with a fluence range from 1x10 sup 1 sup 6 to 1x10 sup 1 sup 7 ions/cm sup 2 at maximum temperature of 130 deg. C, The weight gain curves were measured after being oxidized in air at 500 deg. C for 100 min, which showed that a significant improvement was achieved in the oxidation behavior of zirconium ion implanted with lanthanum compared with that of the as-received zirconium. The valence of the oxides in the scale was analyzed by X-ray photoemission spectroscopy; and then the depth distributions of the elements in the surface of the samples were obtained by Auger electron spectroscopy. Glancing angle X-ray diffraction at 0.3 deg. incident angles was employed to examine the modification of its phase transformation because of the lanthanum ion implantation in the oxide films. It was obviously fou...

  19. Effect of Chemical Doping and Ion Implantation on Conductivity of Poly(p-phenylene vinylene) Derivatives

    Institute of Scientific and Technical Information of China (English)

    LI Bao-ming; WU Hong-cai; LIU Xiao-zeng; LI Xiao-qi; GAO Chao

    2005-01-01

    The surface conductivity of poly [2-methoxy-5-(3 '-methyl)butoxy]-p-phenylene vinylene (PMOMBOPV) films doped with FeCl3 and H2 SO4 by chemical method and implanted by N+ ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N+ions were in the rang 15~35 kev and 3. 8× 1015 ~9. 6× 1016 ions/cm2, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N+ ions. For example, the conductivity of PMOMBOPV film was 3.2 × 10-2 S/cm when ion implantation was performed with an energy of 35 kev at a dose of 9. 6 × 1016 ions/cm2 , which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ionimplanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.

  20. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?

    Energy Technology Data Exchange (ETDEWEB)

    Kouadri-boudjelthia, E.-A., E-mail: e.kouadri@cder.dz [Centre de Développement des Energies Renouvelables, CDER, 16340 Algiers (Algeria); Ntsoenzok, E. [Conditions Extrêmes et Matériaux: Haute Température et Irradiation (CEMHTI), CNRS UPR 3079, 3A Rue de la Férollerie, 45071 Orléans Cedex 2 (France); Benoit, R. [Centre de Recherche sur la Matière Divisée (CRMD), 1B rue de la Férollerie, 45071 Orléans Cedex 2 (France); Regula, G. [Aix-Marseille Université, CNRS, IM2NP, UMR 7334, 13397 Marseille (France); Etienne, H.; Michel, T. [Ion Beam Services (IBS), Rue G. Imbert Prolongée, F-13790 Peynier (France); Ashok, S. [Pennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802 (United States)

    2016-01-01

    Highlights: • The ability of the H implantation by PIII, to form cavities in mc-Si. • The difference between PIII and Classical implantation (multi and mono-energy). • The good trapping ability in real conditions (low impurities concentration). - Abstract: A low-cost purification technique was evaluated on multicrystalline silicon (mc-Si). It consists of an efficient impurity trapping process involving nanocavities created by plasma immersion ion implantation (PIII). The study consisted of assessing (i) the creation of nanocavities by PIII and (ii) their ability to trap impurities in real conditions (without intentional contamination). Square pieces of p-type mc-Si samples, having a surface of 4 cm{sup 2} were used. They were implanted with hydrogen by PIII at 20 kV with a fluence of 5 × 10{sup 16} cm{sup −2} and then annealed for 30 min, in the temperature range 673–1273 K. The evolution of shape, size and spatial distribution of nanocavities was studied by transmission electron microscopy and time of flight secondary ion mass spectrometry in order to check both the formation of cavities and to test their ability to getter impurities by either precipitation or chemisorption. Results reveal surprisingly that, despite the triangular as-implanted H profile, nanocavities can be created by H-PIII, evidently because of the multi-energetic and high flux implantation (about 8 × 10{sup 13} cm{sup −2} s{sup −1}, 40–80 times greater than in conventional implantation) and that they are able to trap various impurities, initially present in mc-Si, such as Fe, Cu and Ni (according to their Gibbs energy), competing with the many existing gettering sites available in mc-Si, such as Si-related precipitates (oxygen, carbon, nitrogen or metal silicides), dislocations and grain boundaries. The area containing the biggest cavities have the highest density of gettering sites, especially for Cu, which can be trapped either by chemisorption (since it has higher binding

  1. Ion Implantation of In0.53Ga0.47As

    Energy Technology Data Exchange (ETDEWEB)

    Almonte, Marlene Isabel [Univ. of California, Berkeley, CA (United States)

    1999-05-01

    Studies of the effects of implanation in In0.53Ga0.47As due to damage by implantation of Ne+ ions and to compensation by implantation of Fe+ ions are reported in this thesis.

  2. Magnetic-ion-doped silicon nanostructures fabricated by ion implantation and electron beam annealing

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Fang, E-mail: v.fang@gns.cri.nz [National Isotope Centre, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); Johnson, Peter B. [National Isotope Centre, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); Kennedy, John; Markwitz, Andreas [National Isotope Centre, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington (New Zealand)

    2013-07-15

    Magnetic-ion-doped Si nanostructures (nanowhiskers) were fabricated by a two-step process on Si (1 0 0) substrates. The substrates were implanted with 7 keV Fe{sup +} to a fluence (F) in the range 1 × 10{sup 13}–4 × 10{sup 15} Fe{sup +} cm{sup −2} prior to electron beam annealing (EBA) for 15 s at a maximum temperature, T, in the range 600–1100 °C. The two-step process was found to produce nanowhiskers at higher surface densities than those produced by applying EBA alone. With increase in Fe{sup +} fluence there is a striking increase in the surface density of the Si nanowhiskers, together with a decrease in the average height. For example, for T = 1000 °C, the density and average height are respectively 12 μm{sup −2} and 8.8 nm for F = 1 × 10{sup 13} Fe{sup +} cm{sup −2}, and 82 μm{sup −2} and 3.1 nm for F = 4 × 10{sup 15} Fe{sup +} cm{sup −2}. The results are compared with those from a three-step process in which the nanowhiskers are pre-formed in a prior EBA treatment. The two-step process is found to be superior for producing high densities with height distributions having lower fractional spreads. The mechanism of the nucleation and growth of nanowhiskers in the final EBA step is discussed. Selected results are presented to show the possibility of controlling the density and average height of Si nanowhiskers doped with magnetic ions for spin-dependent enhanced field emission.

  3. Carbon ion pump for removal of carbon dioxide from combustion gas and other gas mixtures

    Science.gov (United States)

    Aines, Roger D.; Bourcier, William L.

    2010-11-09

    A novel method and system of separating carbon dioxide from flue gas is introduced. Instead of relying on large temperature or pressure changes to remove carbon dioxide from a solvent used to absorb it from flue gas, the ion pump method, as disclosed herein, dramatically increases the concentration of dissolved carbonate ion in solution. This increases the overlying vapor pressure of carbon dioxide gas, permitting carbon dioxide to be removed from the downstream side of the ion pump as a pure gas. The ion pumping may be obtained from reverse osmosis, electrodialysis, thermal desalination methods, or an ion pump system having an oscillating flow in synchronization with an induced electric field.

  4. Carbon ion pump for removal of carbon dioxide from combustion gas and other gas mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Aines, Roger D.; Bourcier, William L.

    2014-08-19

    A novel method and system of separating carbon dioxide from flue gas is introduced. Instead of relying on large temperature or pressure changes to remove carbon dioxide from a solvent used to absorb it from flue gas, the ion pump method, as disclosed herein, dramatically increases the concentration of dissolved carbonate ion in solution. This increases the overlying vapor pressure of carbon dioxide gas, permitting carbon dioxide to be removed from the downstream side of the ion pump as a pure gas. The ion pumping may be obtained from reverse osmosis, electrodialysis, thermal desalination methods, or an ion pump system having an oscillating flow in synchronization with an induced electric field.

  5. The damaging effects of nitrogen ion beam implantation on upland cotton ( Gossypium hirsutum L.) pollen grains

    Science.gov (United States)

    Yu, Yanjie; Wu, Lijun; Wu, Yuejin; Wang, Qingya; Tang, Canming

    2008-09-01

    With the aim to study the effects of an ion beam on plant cells, upland cotton (Gossypium hirsutum L.) cultivar "Sumian 22" pollen grains were irradiated in vacuum (7.8 × 10-3 Pa) by low-energy nitrogen ions with an energy of 20 keV at various fluences ranging from 0.26 × 1016 to 0.78 × 1016 N+/cm2. The irradiation effects on pollen grains were tested, considering the ultrastructural changes in the exine and interior walls of pollen grains, their germination rate, the growth speed of the pollen tubes in the style, fertilization and boll development after the pistils were pollinated by the pollen grains which had been implanted with nitrogen ions. Nitrogen ions entered the pollen grains by etching and penetrating the exine and interior walls and destroying cell structures. A greater percentage of the pollen grains were destroyed as the fluence of N+ ions increased. Obviously, the nitrogen ion beam penetrated the exine and interior walls of the pollen grains and produced holes of different sizes. As the ion fluence increased, the amount and the density of pollen grain inclusions decreased and the size of the lacuna and starch granules increased. Pollen grain germination rates decreased with increasing ion fluence. The number of pollen tubes in the style declined with increased ion implantation into pollen grains, but the growth speed of the tubes did not change. All of the pollen tubes reached the end of the style at 13 h after pollination. This result was consistent with that of the control. Also, the weight and the diameter of the ovary decreased and shortened with increased ion beam implantation fluence. No evident change in the fecundation time of the ovule was observed. These results indicate that nitrogen ions can enter pollen grains and cause a series of biological changes in pollen grains of upland cotton.

  6. Shunting arc plasma source for pure carbon ion beama)

    Science.gov (United States)

    Koguchi, H.; Sakakita, H.; Kiyama, S.; Shimada, T.; Sato, Y.; Hirano, Y.

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA/mm2 at the peak of the pulse.

  7. Shunting arc plasma source for pure carbon ion beam.

    Science.gov (United States)

    Koguchi, H; Sakakita, H; Kiyama, S; Shimada, T; Sato, Y; Hirano, Y

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.

  8. Electrical Activation Studies of Ion Implanted Gallium Nitride

    Science.gov (United States)

    2001-11-20

    Amplifier Electromagnet Controller Lakeshore DRC -91CA Temperature Controller 706 Scanner 196 Digital Multimeter 220 Current Source 617 Electrometer...complete list of publications resulting from this doctoral research. The list is divided into three sections: journal articles, refereed conference...2001. Refereed Conference Proceedings: “Optical Characterization of Mg- and Si-Implanted GaN,” Fellows J., Yeo Y.K., Hengehold R., and Krasnobaev

  9. Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Baranwal, V., E-mail: vikasphy@gmail.com; Pandey, Avinash C. [Nanotechnology Application Centre, University of Allahabad, Allahabad 211 002 (India); Gerlach, J. W.; Lotnyk, A.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, D-04318 Leipzig (Germany); Karl, H. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany); Ojha, S.; Avasthi, D. K.; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-10-07

    200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.

  10. Surface modification of TiO2 coatings by Zn ion implantation for improving antibacterial activities

    Indian Academy of Sciences (India)

    Xiaobing Zhao; Jiashen Yang; Jing You

    2016-02-01

    TiO$_2$ coating has been widely applied in orthopaedic and dental implants owing to its excellent mechanical and biological properties. However, one of the biggest complications of TiO$_2$ coating is implant-associated infections. The aim of this work is to improve the antibacterial activity of plasma-sprayed TiO$_2$ coatings by plasma immersion ion implantation (PIII) using zinc (Zn) ions. Results indicate that the as-sprayed TiO$_2$ coating is mainly composed of rutile phase. Zn-PIII modification does not change the phase compositions and the surface morphologies of TiO$_2$ coatings, while change their hydrophilicity. Zn-implanted TiO$_2$ coatings can inhibit the growth of Staphylococcus aureus (S. aureus) and Escherichia coli (E. coli), and the ability to inhibit S. aureus is greater than that to E. coli. Zn ion release and reactive oxygen species may be attributed to improving the antibacterial activity of TiO$_2$ coating. Therefore, Zn-PIII TiO$_2$ coatings on titanium suggest promising candidates for orthopaedic and dental implants.

  11. Ion implantation in conjugated polymers: mechanisms for generation of charge carriers

    Energy Technology Data Exchange (ETDEWEB)

    Moliton, A.; Lucas, B.; Moreau, C. (Limoges Univ., 87 (France)); Friend, R.H. (Cambridge Univ. (United Kingdom). Cavendish Lab.); Francois, B. (Institut Charles-Sandron (CNRS), Strasbourg (France))

    1994-06-01

    Ion implantation in conjugated polymers can produce both doping (with suitable choice of ions) and damage in the form of broken covalent bonds. We consider the electronic and transport properties as assessed from measurements on poly(paraphenylene) of d.c. conductivity, thermopower and a.c. conductivity studied against temperature for various implantation parameters. Damage is produced at high implantation energies and high doses, and we find that transport phenomena occur mainly in degenerate states near the Fermi energy, exhibiting a p-type thermopower. We propose a model in which the sp[sup 2] [sigma]-dangling-bond states formed as a result of bond scission are filled from the [pi] valence band. This partial emptying of the valence band is consistent with the transport properties. Lower implantation doses at lower energies induce doping in polaronic bands, with both p-type and n-type thermopower, depending on the ion implanted, although the effects of the defects present can appear, especially at low temperatures. (Author).

  12. The structural and optical properties of metal ion-implanted GaN

    Science.gov (United States)

    Macková, A.; Malinský, P.; Sofer, Z.; Šimek, P.; Sedmidubský, D.; Veselý, M.; Böttger, R.

    2016-03-01

    The practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0 0 0 1) crystallographic direction that have been grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200 keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM.

  13. Variable-temperature sample system for ion implantation at -192 to +500/sup 0/C

    Energy Technology Data Exchange (ETDEWEB)

    Fuller, C.T.

    1978-04-01

    A variable-temperature sample system based on exchange-gas coupling was developed for ion-implantation use. The sample temperature can be controlled from -192/sup 0/C to +500/sup 0/C with rapid cooling. The system also has provisions for focusing and alignment of the ion beam, electron suppression, temperature monitoring, sample current measuring, and cryo-shielding. Design considerations and operating characteristics are discussed. 5 figures.

  14. Screening of Bioflocculant-Producing Strain by Ion Implantation and Flocculating Characteristics of Bioflocculants

    Science.gov (United States)

    Li, Peirui; Li, Zongwei; Li, Zongyi; Qin, Guangyong; Huo, Yuping

    2008-06-01

    A bioflocculant-producing mutator strain, NIM-192, was screened out through nitrogen ion implanting into FJ-7 strain. The results showed that NIM-192 had good genetic stability and high flocculating activity, and the flocculating rate increased by 34.26% than that of the original. Sucrose, complex nitrogen source contained yeast extract, urea and pH 7.0 ~ 9.0 were chosen as the best carbon source, nitrogen source and initial solution pH for bioflocculant production, respectively. The bioflocculant kept high and stable flocculating activity at alkalinous reaction mixture with a pH beyond 7.0, while the flocculating activity was remarkably reduced when the reaction pH was lower than 7.0. Addition of many cations could obviously increase the flocculating rate, among which Ca2+ demonstrated the best effect. The bioflocculant had very strong acid-base stability and thermo-stability. The flocculating rate kept over 86% when pH of the bioflocculant was in a range of 3.0 ~ 12.0, and the change of flocculating activity was not great when heated at 100°C for 60 min.

  15. Screening of Bioflocculant-Producing Strain by Ion Implantation and Flocculating Characteristics of Bioflocculants

    Institute of Scientific and Technical Information of China (English)

    LI Peirui; LI Zongwei; LI Zongyi; QIN Guangyong; HUO Yuping

    2008-01-01

    A bioflocculant-producing mutator strain, NIM-192, was screened out through nitro-gen ion implanting into F J-7 strain. The results showed that NIM-192 had good genetic stability and high flocculating activity, and the flocculating rate increased by 34.26% than that of the orig-inal. Sucrose, complex nitrogen source contained yeast extract, urea and pH 7.0 ~ 9.0 were chosen as the best carbon source, nitrogen source and initial solution pH for bioflocculant production, respectively. The bioflocculant kept high and stable flocculating activity at alkalinous reaction mixture with a pH beyond 7.0, while the flocculating activity was remarkably reduced when the reaction pH was lower than 7.0. Addition of many cations could obviously increase the flocculating rate, among which Ca2+ demonstrated the best effect. The bioflocculant had very strong acid-base stability and thermo-stability.The flocculating rate kept over 86% when pH of the bioflocculant was in a range of 3.0 ~ 12.0, and the change of flocculating activity was not great when heated at 100℃ for 60 min.

  16. Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Santhakumar, K [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India); Rao, G Venugopal [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Amarendra, G [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Abhaya, S [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Sastry, V Sankara [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Nair, K G M [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603102 (India); Ravichandran, V [Department of Nuclear Physics, University of Madras, Chennai - 600025 (India)

    2005-12-21

    Depth resolved positron annihilation measurements were carried out on 85 keV and 1 MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 10{sup 15} cm{sup -2} and coexistence of monovacancies and divacancies for 10{sup 16} cm{sup -2} dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made.

  17. High resolution Laplace DLTS studies of defects in ion-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Evans-Freeman, J.H. E-mail: j.evans-freeman@umist.ac.uk; Abdelgader, N.; Kan, P.Y.Y.; Peaker, A.R

    2002-01-01

    We have used high resolution Laplace deep level transient spectroscopy (LDLTS) to investigate defects in n-type silicon caused by implantation of Si, Ge or Er with doses of the order of 1x10{sup 9} cm{sup -2}. These are compared with defects created in proton irradiated n-type silicon. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted silicon show that there are many emission rates associated with defects with energies in the region of E{sub c}-400 meV. We have carried out annealing studies and Laplace DLTS depth profiling and show that the complex spectra measured from a region less than half way through the implant simplify as the profile is moved through the implant and towards the tail. Annealing studies show that these defects survive an anneal that should remove the E-centre.

  18. Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

    Science.gov (United States)

    Liang, Qiuxia; Huang, Qunce; Cao, Gangqiang; Ying, Fangqing; Liu, Yanbo; Huang, Wen

    2008-04-01

    Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on "the shape of saddle", but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7 × 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to M7. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5 × 1017 nitrogen ions/cm2, and the weight of succulent root and the volume of growth were over twice the control's. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables' genetic improvement.

  19. Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, A.D. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai, Maharashtra 400098 (India)], E-mail: adyadav@physics.mu.ac.in; Patel, A.P.; Dubey, S.K. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai, Maharashtra 400098 (India); Panigrahi, B.K.; Kesavamoorthy, R.; Nair, K.G.M. [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu 603102 (India)

    2008-04-15

    The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen ({sup 14}N{sup +}) ions at fluence of 1.0 x 10{sup 17}, 2.5 x 10{sup 17} and 5.0 x 10{sup 17} cm{sup -2} into <1 1 1> single crystal silicon substrates held at elevated temperature (410 deg. C). The structures of ion-beam synthesized buried silicon nitride layers were studied by X-ray diffraction (XRD) technique. The XRD studies reveal the formation of hexagonal silicon nitride (Si{sub 3}N{sub 4}) structure at all fluences. The concentration of the silicon nitride phase was found to be dependent on the ion fluence. The intensity and full width at half maximum (FWHM) of XRD peak were found to increase with increase in ion fluence. The Raman spectra for samples implanted with different ion fluences show crystalline silicon (c-Si) substrate peak at wavenumber 520 cm{sup -1}. The intensity of the silicon peak was found to decrease with increase in ion fluence.

  20. Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

    Institute of Scientific and Technical Information of China (English)

    LIANG Qiuxia; HUANG Qunce; CAO Gangqiang; YING Fangqing; LIU Yanbo; HUANG Wen

    2008-01-01

    Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on "the shape of saddle", but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7×1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to M7. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5×1017 nitrogen ions/cm2, and the weight of succulent root and the volume of growth were over twice the control's. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables' genetic improvement.

  1. In vitro prominent bone regeneration by release zinc ion from Zn-modified implant

    Energy Technology Data Exchange (ETDEWEB)

    Yusa, Kazuyuki [Department of Biochemistry, Akita University Graduate School of Medicine, Akita (Japan); Yamamoto, Osamu [Department of Bio-System Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa (Japan); Fukuda, Masayuki [Division of Dentistry and Oral Surgery, Akita University Hospital, Akita (Japan); Koyota, Souichi; Koizumi, Yukio [Department of Biochemistry, Akita University Graduate School of Medicine, Akita (Japan); Sugiyama, Toshihiro, E-mail: sugiyama@med.akita-u.ac.jp [Department of Biochemistry, Akita University Graduate School of Medicine, Akita (Japan)

    2011-08-26

    Highlights: {yields} We isolated the Zn{sup 2+} ions (eluted Zn{sup 2+} ion; EZ) from zinc-incorporated titanium implant. {yields} The EZ promoted the cell viability in hBMCs. {yields} The EZ stimulated preosteoblast and osteoblast marker gene expression in hBMCs. {yields} The hBMCs supplemented with EZ showed typically cell morphology when osteoblast maturing. {yields} It is revealed that the EZ also stimulates the calcium deposition of hBMCs. -- Abstract: Zinc is one of the trace elements which induce the proliferation and the differentiation of the osteoblast. In the previous study, we found that zinc ions (Zn{sup 2+} ion)-releasing titanium implants had excellent bone fixation using a rabbit femurs model. In this study, we isolated the Zn{sup 2+} ions (eluted Zn{sup 2+} ion; EZ) released from the implant surface, and evaluated the effect of EZ on the osteogenesis of human bone marrow-derived mesenchymal cells (hBMCs). In the result, it was found that the EZ stimulated cell viability, osteoblast marker gene (type I collagen, osteocalcin (OC), alkaline phosphatase (ALP) and bone sialoprotein (BSP)) expressions and calcium deposition in hBMCs.

  2. MODIFICATION OF SURFACE MECHANICAL PROPERTIES OF POLYCARBONATE BY B+ AND O+ IONS IMPLANTATION

    Institute of Scientific and Technical Information of China (English)

    S.D.Yao; C.Sun; S.Q.Zhou; C.C.Sun; Y.H.Lu; L.Huang; A.Vantomme; Q.Zhao; G.Langouche

    2002-01-01

    By implanting B+ and O+ ions respectively into polycarbonate (PC) plates, the sur-face mechanical properties of PC have been improved. Measurement by Nano IndenterⅡ showed that the hardness of samples increased 7-25 times than that before implan-tation; and the modulus of elasticity raised 2-5 times. The wear-resistance was testedby ball crusher; the width and depth of the wear-streak decreased by 1/3-1/2 or evenmore. The structure, deformation and appearance were analyzed by using Micro-FTIR Spectra, ESCA method and the steps instrument. These analyses showed thatthe structure of PC had been modified: a series of new cross-linking yielded, it de-pends on the Linear Energy Transition (LET) of implanted ions in the high polymercompounds.

  3. Ion implantation of Cd and Ag into AlN and GaN

    CERN Document Server

    Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

    2012-01-01

    GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

  4. Analysis of Accumulating Ability of Heavy Metals in Lotus (Nelumbo nucifera) Improved by Ion Implantation

    Science.gov (United States)

    Zhang, Jianhua; Wang, Naiyan; Zhang, Fengshou

    2012-05-01

    Heavy metals have seriously contaminated soil and water, and done harm to public health. Academician WANG Naiyan proposed that ion-implantation technique should be exploited for environmental bioremediation by mutating and breeding plants or microbes. By implanting N+ into Taikonglian No.1, we have selected and bred two lotus cultivars, Jingguang No.1 and Jingguang No.2. The present study aims at analyzing the feasibility that irradiation can be used for remediation of soil and water from heavy metals. Compared with parent Taikonglian No.1, the uptaking and accumulating ability of heavy metals in two mutated cultivars was obviously improved. So ion implantation technique can indeed be used in bioremediation of heavy metals in soil and water, but it is hard to select and breed a cultivar which can remedy the soil and water from all the heavy metals.

  5. n{sup +}/p diodes by ion implantation: Dopant, extended defects, and impurity concerns

    Energy Technology Data Exchange (ETDEWEB)

    Xu, M.; Venables, D.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

    1995-08-01

    The present study is concerned with the formation of defect structures resulting from phosphorus ion implantation into p-type, <100> silicon and with the rearrangement as well as removal of defect structures following high temperature annealing. The problematic interaction of background impurities with extended defects also is included in this study, as are the non-illuminated and illuminated electrical characteristics of n+/p diodes that are fabricated using ion implantation. Wafers and diodes that are fabricated using a phosphorus planar diffusion technique are run in parallel and serve as the controls. In this contribution, preliminary results for the cases of a 50 keV implant followed by an anneal at 900{degrees}C/30 min and a diffusion at 825{degrees}C/60 min are summarized.

  6. On the characteristics of ion implanted metallic surfaces inducing dropwise condensation of steam.

    Science.gov (United States)

    Rausch, Michael H; Leipertz, Alfred; Fröba, Andreas P

    2010-04-20

    The present work provides new information on the characteristics of ion implanted metallic surfaces responsible for the adjustment of stable dropwise condensation (DWC) of steam. The results are based on condensation experiments and surface analyses via contact angle (CA) and surface free energy (SFE) measurements as well as scanning electron microscopy (SEM). For studying possible influences of the base material and the implanted ion species, commercially pure titanium grade 1, aluminum alloy Al 6951, and stainless steel AISI 321 were treated with N(+), C(+), O(+), or Ar(+) using ion beam implantation technology. The studies suggest that chemically inhomogeneous surfaces are instrumental in inducing DWC. As this inhomogeneity is apparently caused by particulate precipitates bonded to the metal surface, the resulting nanoscale surface roughness may also influence the condensation form. On such surfaces nucleation mechanisms seem to be capable of maintaining DWC even when CA and SFE measurements indicate increased wettability. The precipitates are probably formed due to the supersaturation of ion implanted metal surfaces with doping elements. For high-alloyed materials like AISI 321 or Hastelloy C-276, oxidation stimulated by the condensation process obviously tends to produce similar surfaces suitable for DWC.

  7. The influence of nitrogen ion implantation on microhardness of the Stellite 6 alloy

    Science.gov (United States)

    Budzyński, P.; Kamiński, M.; Pałka, K.; Droździel, A.; Wiertel, M.

    2016-09-01

    Cobalt alloys known as Stellite used to produce or surfacing machine elements subjected to combustion gases and heat. They are used a currently in the manufacture of valves and valve seats in internal combustion engines. Because of the small thermal conductivity, stellite may not be subjected heat treatment. In order to improve the mechanical properties of cobalt alloys, samples were implanted with nitrogen ions with 65 keV energy and ion dose of 1·1016, 5·1016, 1·1017 N+/cm2. The influence of ion implantation on properties of strength was determined by measuring microhardness using a Vickers hardness test. The measurement results allowed to determine the increase in the microhardness of 20% with dose 5·1016 N+/cm2 compared to the sample not implanted. Implantation of nitrogen ions can increase the strength of the valves and the valve seats having Stellite without changing the external dimensions of the final element, and without interfering with its inner structure by low-temperature of modification the surface layer.

  8. Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

    NARCIS (Netherlands)

    Lohner, T.; Toth, L.; Fried, M.; Khanh, N.Q.; Yang, Gen Qing; Lu, Lin Chen; Zou, Shichang; Hanekamp, L.J.; Silfhout, van A.; Gyulai, J.

    1994-01-01

    The damaging effect of mono- and diatomic phosphorus and arsenic ions implanted into silicon was investigated by spectroscopic ellipsometry (SE) and high-depth-resolution Rutherford backscattering and channeling techniques. A comparison was made between the two methods to check the capability of ell

  9. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  10. (n,p) emission channeling measurements on ion-implanted beryllium

    CERN Multimedia

    Jakubek, J; Uher, J

    2007-01-01

    We propose to perform emission-channeling measurements using thermal neutron induced proton emission from ion-implanted $^{7}$Be. The physics questions addressed concern the beryllium doping of III-V and II-VI semiconductors and the host dependence of the electron capture half-life of $^{7}$Be.

  11. THE BEHAVIORS OF 48keV Si IONS IMPLANTED INTO(100)GaAs

    Institute of Scientific and Technical Information of China (English)

    刘惠珍; 曹德新; 等

    1994-01-01

    The behaviors of Si ions implanted into(100)GaAs at liquid nitrogen temperature with energy of 48keV at the doses of 1×1015-5×1015 ions/cm2 has been investigated in this study.The Rutherford backscattering-channeling (RBS-C) combined with particle induced X-ray emission(PIXE) has been used to determine the sites of the Si atoms in the GaAs substrate.The four-point probe was used to measure the resistance of the GaAs before and after Si ions implantation.The experimental results show that Si atoms occupy not only on Ga site but also on As site.The sheet resistivity of GaAs reduced from 1×109Ω/□to 4.5×106Ω/□ after Si ions implanted.and to 4.0×104 Ω/□ after annealing at 850℃ in argon.These results are consistent with some other investigations,for instance,the results of G.Braunstein et al and R.S.Bhattacharya et al.although the implantation condition is not the same.

  12. Fabrication of highly transparent Al-ion-implanted ZnO thin films by metal vapor vacuum arc method

    Science.gov (United States)

    Lee, Han; Sivashanmugan, Kundan; Kao, Chi-Yuan; Liao, Jiunn-Der

    2017-03-01

    In this study, we utilized the metal vapor vacuum arc technique to implant vaporized aluminum (Al) ions in zinc oxide (ZnO) thin films. By adjusting the ion implantation dose and operational parameters, the conductivity and optical properties of the ZnO thin film can be controlled. The electrical sheet resistance of Al-ion-implanted ZnO decreased from 3.02 × 107 to 3.03 × 104 Ω/sq, while the transparency of the film was mostly preserved (91.5% at a wavelength of 550 nm). The ZnO thin-film Young’s modulus significantly increased with increasing Al ion dose.

  13. The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, M.; Laariedh, F. [Université de Lyon, Laboratoire AMPERE, INSA Lyon, UMR CNRS 5005, 21 Avenue Jean Capelle, 69621 Villeurbanne (France); Cremillieu, P. [Université de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS 5270, 36 Avenue Guy de Collongue, 69134 Ecully (France); Planson, D. [Université de Lyon, Laboratoire AMPERE, INSA Lyon, UMR CNRS 5005, 21 Avenue Jean Capelle, 69621 Villeurbanne (France); Leclercq, J.-L. [Université de Lyon, Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS 5270, 36 Avenue Guy de Collongue, 69134 Ecully (France)

    2015-12-15

    A strong channeling effect is observed for the ions of Al and N implanted in 4H–SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H–SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect.

  14. Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, A.D. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India)]. E-mail: adyadav@physics.mu.ac.in; Polji, Rucha H. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Singh, Vibha [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Dubey, S.K. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Gundu Rao, T.K. [Regional Sophisticated Instrumentation Center, IIT Bombay, Powai, Mumbai 400 076 (India)

    2006-04-15

    Silicon oxynitride (Si {sub x}O {sub y}N {sub z}) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by {sup 14}N{sup +} and {sup 16}O{sup +} ion implantation to high fluence levels 1 x 10{sup 17}, 2.5 x 10{sup 17} and 5 x 10{sup 17} ions cm{sup -2} sequentially in the ratio 1:1 at 150 keV into p-type (1 0 0) silicon wafers. The identification of structures and defects in the ion beam synthesized buried layers were carried out by FTIR, XRD and ESR measurements before and after RTA treatments at different temperatures in nitrogen ambient. The FTIR spectra show single broad absorption band in the wavenumber range 1250-600 cm{sup -1} confirming the formation of silicon oxynitride. The integrated absorption band intensity is found to increase with increasing ion fluence and on annealing indicating gradual chemical transformation of the ion implanted layer into silicon oxynitride. The XRD data of the implanted samples show the formation of Si{sub 2}N{sub 2}O (O) phase of silicon oxynitride. On annealing the samples, SiO{sub 2} (H)/Si{sub 3}N{sub 4} (H) phases are also formed in addition to Si{sub 2}N{sub 2}O (O) phase. The concentration of the formed phases is found to increase with increase in the ion fluence as well as the annealing temperature. The ESR studies both at room temperature and at low temperatures reveal the presence of a defect center associated with silicon dangling bonds. The increase in ion fluence gives rise to small variations in g-values and increase in the spin density. The spin density decreases in general with increasing the annealing temperature.

  15. Microstructure characterization and optical properties of sapphire after helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Mian; Yang, Liang [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Shen, Huahai [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Liu, Wei [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Xiang, Xia, E-mail: xiaxiang@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Wanguo, E-mail: wgzheng_caep@sina.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Guo, Decheng [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Huang, Jin [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, Kai [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Yuan, Xiaodong, E-mail: yxd66my@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2015-06-15

    The (0 0 0 1) sapphire samples are irradiated with 60 keV helium ions at the fluences of 5 × 10{sup 16}, 1 × 10{sup 17}and 5 × 10{sup 17} ions/cm{sup 2} at room temperature. After implantation, two broad absorption bands at 320–460 and 480–700 nm are observed and their intensities increase with the increasing ion fluence. The grazing incidence X-ray diffraction results indicate that the {0 0 0 1} diffraction peaks of sapphire decrease and broaden due to the disorientation of the generated crystallites after ion irradiation. The microstructure evolution is examined by the scanning and transmission electron microscopes. The surface becomes rough because of the aggregation of helium bubbles and migration towards the surface. There is a lattice expansion up to ∼4.5% in the implanted area and the lattice distortion measured from dispersion of (1 1 0) diffraction is ∼4.6°. Such strain of crystal lattice is rather large and leads to contrast fluctuation at scale of 1–2 nm (the bubble size). The laser induced damage threshold (LIDT) is investigated to understand the effect of helium ion beam irradiation on the laser damage resistance of sapphire components and the results show that the LIDT decreases from 5.4 to 2.5 J/cm{sup 2} due to the absorptive color centers, helium bubbles and defects induced by helium ion implantation. The laser damage morphologies of samples before and after ion implantation are also presented.

  16. Enhanced nitrogen and phosphorus removal from eutrophic lake water by Ipomoea aquatica with low-energy ion implantation.

    Science.gov (United States)

    Li, Miao; Wu, Yue-Jin; Yu, Zeng-Liang; Sheng, Guo-Ping; Yu, Han-Qing

    2009-03-01

    Ipomoea aquatica with low-energy N+ ion implantation was used for the removal of both nitrogen and phosphorus from the eutrophic Chaohu Lake, China. The biomass growth, nitrate reductase and peroxidase activities of the implanted I. aquatica were found to be higher than those of I. aquatica without ion implantation. Higher NO3-N and PO4-P removal efficiencies were obtained for the I. aquatica irradiation at 25 keV, 3.9 x 10(16) N+ ions/cm(2) and 20 keV 5.2 x 10(16) N+ ions/cm(2), respectively (p phosphorus contents in the plant biomass with ion implantation were also greater than those of the controls. I. aquatica with ion implantation was directly responsible for 51-68% N removal and 54-71% P removal in the three experiments. The results further confirm that the ion implantation could enhance the growth potential of I. aquatica in real eutrophic water and increase its nutrient removal efficiency. Thus, the low-energy ion implantation for aquatic plants could be considered as an approach for in situ phytoremediation and bioremediation of eutrophic waters.

  17. 不同消毒方法对碳离子改性硅橡胶表面自由能及邵氏硬度的影响%Effect of different disinfection methods on surface free energy and Shore hardness of carbon ion-implanted silicone rubber

    Institute of Scientific and Technical Information of China (English)

    周鑫; 陈兴; 石小花; 王韶亮; 雷泽源; 樊东力; 张一鸣

    2016-01-01

    目的 初步探讨碳离子硅橡胶经过不同消毒试剂与方法处理后其表面亲疏水性、表面自由能以及邵氏硬度的变化情况.方法 碳离子硅橡胶经过70%酒精、2%碱性戊二醛、0.5%碘伏、5.25%次氯酸钠、3%过氧化氢以及134℃高温、高压等消毒试剂或方法处理后,采用静态接触角测定仪检测其表面水、甘油接触角以及邵氏硬度变化情况,采用Owen-Wendt公式计算表面自由能γs、极性分量γsp以及非极性分量γsd变化.结果 碳离子硅橡胶经过5.25%次氯酸钠以及3%过氧化氢处理后,其表面接触角以及表面自由能发生明显变化,前者使得其表面呈现出完全的亲水性;70%酒精、2%碱性戊二醛、0.5%碘伏以及134℃高温、高压等方法对材料表面接触角以及表面自由能等影响较小.不同处理组材料表面邵氏硬度差异均无统计学意义.结论 70%酒精以及134℃高温、高压等消毒方法对碳离子硅橡胶表面性能影响最小,结合操作便利性等因素,70%酒精可认为是该材料最适宜的消毒处理方式.而次氯酸钠消毒液极不利于该材料表面形貌维持,不宜采用.%Objective To study the changes of surface contact angle,surface free energy and Shore hardness of carbon ion-implanted silicone rubber disinfected by different methods.Methods Carbon ionimplanted silicone rubber was treated with 70% alcohol,2% alkaline glutaraldehyde,0.5% iodine volts,5.25% sodium hypochlorite,3% hydrogen peroxide respectively,and high temperature of 134℃ under high pressure for 2 h,and then the surface contact angle and Shore hardness were tested with a contact angle instrument and a Shore durometer (type A).Surface free energy,polar component and nonpolar component were calculated with Owen-Wendt methods.Results The surface quality of carbon ion-implanted silicone rubber was changed after disinfection with 3% hydrogen peroxide and 5.25% sodium

  18. Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A., E-mail: attaullah77@yahoo.com [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Ahmad, Jamil [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Ahmad, Ishaq [Experimental Physics Lab, National Center for Physics (NCP), Islamabad (Pakistan); Mehmood, Mazhar [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Mahmood, Arshad [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); Rasheed, Muhammad Asim [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan)

    2014-10-30

    Highlights: • AlN:Cu dilute magnetic semiconductors were successfully prepared by molecular beam epitaxy followed by Cu{sup +} implantation. • Room temperature ferromagnetism was observed after annealing the samples at appropriate temperature. • XRD and Raman spectrometry excluded the possibility of formation of any secondary phases. • By doping intrinsically nonmagnetic dopants (Cu), it has been proved experimentally that their precipitates do not contribute to ferromagnetism. • The reason for ferromagnetism in Cu-doped AlN as observed was explained on the basis of p–d hybridization mechanism (Wu et al.). - Abstract: Diluted magnetic semiconductor (DMS) AlN:Cu films were fabricated by implanting Cu{sup +} ions into AlN thin films at various ion fluxes. AlN films were deposited on c-plane sapphire by molecular beam epitaxy followed by Cu{sup +} ion implantation. The structural and magnetic characterization of the samples was performed through Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Incorporation of copper into the AlN lattice was confirmed by RBS, while XRD revealed that no new phase was formed as a result of ion implantation. RBS also indicated formation of defects as a result of implantation process and the depth and degree of damage increased with an increase in ion fluence. Raman spectra showed only E{sub 2} (high) and A{sub 1} (LO) modes of wurtzite AlN crystal structure and confirmed that no secondary phases were formed. It was found that both Raman modes shift with Cu{sup +} fluences, indicating that Cu ion may go to interstitial or substitutional sites resulting in distortion or damage of lattice. Although as implanted samples showed no magnetization, annealing of the samples resulted in appearance of room temperature ferromagnetism. The saturation magnetization increased with both the annealing temperature as well as with ion

  19. Ion Implantation in Ge: Structural and electrical investigation of the induced lattice damage & Study of the lattice location of implanted impurities

    CERN Document Server

    Decoster, Stefan; Wahl, Ulrich

    The past two decades, germanium has drawn international attention as one of the most promising materials to replace silicon in semiconductor applications. Due to important advantages with respect to Si, such as the increased electron and hole mobility, Ge is well on its way to become an important material in future high-speed integrated circuits. Although the interest in this elemental group IV semiconductor is increasing rapidly nowadays, the number of publications about this material is still relatively scarce, especially when compared to Si. The most widely used technique to dope semiconductors is ion implantation, due to its good control of the dopant concentration and profile, and the isotopic purity of the implanted species. However, there is a major lack of knowledge of the fundamental properties of ion implantation in Ge, which has triggered the research presented in this thesis. One of the most important and generally unwanted properties of ion implantation is the creation of damage to the crystal la...

  20. Seeding of silicon by copper ion implantation for selective electroless copper plating

    Energy Technology Data Exchange (ETDEWEB)

    Bhansali, S.; Sood, D.K.; Zmood, R.B. [Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technolgy, Melbourne, VIC (Australia)

    1993-12-31

    We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.

  1. Low-temperature damage formation in ion implanted InP

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany); Stonert, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Turos, A. [National Center of Nuclear Research, 05-400 Swierk/Otwock (Poland); Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Wesch, W. [Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)

    2013-07-15

    Damage formation in ion implanted InP is studied by quasi–in situ Rutherford backscattering spectrometry (RBS) in channelling configuration. Subsequent implantation steps are performed at 15 K each followed by immediate RBS analysis without changing the environment or the temperature of the sample. 30 keV He, 150 keV N and 350 keV Ca ions were applied. The depth distribution of damage is in good agreement with that calculated with the SRIM code. The evolution of damage at the maximum of the distribution as a function of the ion fluence is described assuming damage formation within single ion impacts and stimulated growth of damage when the collision cascades start to overlap with cross sections σ{sub d} and σ{sub g}, respectively. These cross sections are found to depend on the primary energies deposited in the displacement of lattice atoms and in electronic interactions calculated with the SRIM code. The obtained empirical formulas are capable to represent the experimental results for different III–V compounds implanted at 15 K with various ion species.

  2. Implanted-ion βNMR: A new probe for nanoscience.

    Science.gov (United States)

    MacFarlane, W A

    2015-01-01

    NMR detected by radioactive beta decay, β-NMR, is undergoing a renaissance largely due to the availability of high intensity low energy beams of the most common probe ion, Li+8, and dedicated facilities for materials research. The radioactive detection scheme, combined with the low energy ion beam, enable depth resolved NMR measurements in crystals, thin films and multilayers on depth scales of 2-200 nm. After a brief historical introduction, technical aspects of implanted-ion β-NMR are presented, followed by a review of recent applications to a wide range of solids.

  3. Improvement of tribological responses of sputtered MoSx films by indium ion implantation

    Institute of Scientific and Technical Information of China (English)

    YasuhideNAWATA; HideoFUJIURA; MakotoNISHIMURA

    2001-01-01

    Molybdenum disulfide (MoS2) has been applied to various space mechanisms as solidlubricant. The tribological characteristics of sputtered MoSx films have been improved by inert gasion implantation. We tried to extend the wear life and reduce friction coefficient by high energyimplantation of indium ions. In friction tests, a pin-on-disk tester was used to measure friction coeffi-cient and wear life in a vacuum, dry air and air of 30%, 50% and 80% RH. Indium ions implanted the filmat a dose of 1×1016 ions/cm2 exhibited friction coefficient of 0.008 and 5.0 times longer wear life thanthe unimplanted ones did. However, the wear life of this film tested in high humid air presented no im-provement.

  4. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  5. Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

    Science.gov (United States)

    Hassan, A.; El-Saftawy, A. A.; Aal, S. A. Abd El; Ghazaly, M. El

    2015-08-01

    Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

  6. Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Pavlidis, D.; Cazaux, J.L.; Graffeuil, J.

    1988-04-01

    The RF small-signal performance of GaAs MESFET's and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess depth influence are theoretically analyzed with the help of a specially developed device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are finally proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FET's and to realize process-tolerant MMIC amplifiers.

  7. Gas feeding molecular phosphorous ion source for semiconductor implanters

    Science.gov (United States)

    Gushenets, V. I.; Oks, E. M.; Bugaev, A. S.; Kulevoy, T. V.; Hershcovitch, A.

    2014-02-01

    Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus—red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ˜ 2 × 105, P4/P ˜ 1021). It is for this reason that red phosphorus is best suited as a source of polyatomic molecular ion beams. The paper reports on experimental research in the generation of polyatomic phosphorus ion beams with an alternative P vapor source for which a gaseous compound of phosphorus with hydrogen - phosphine - is used. The ion source is equipped with a specially designed dissociator in which phosphine heated to temperatures close to 700 °C decomposes into molecular hydrogen and phosphorus (P4) and then the reaction products are delivered through a vapor line to the discharge chamber. Experimental data are presented reflecting the influence of the discharge parameters and temperature of the dissociator heater on the mass-charge state of the ion beam.

  8. Structural studies of silicon oxynitride layers formed by low energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Alka R. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Yadav, A.D. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India)], E-mail: adyadav@physics.mu.ac.in; Dubey, S.K. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Gundu Rao, T.K. [SAIF, IIT Bombay, Mumbai (India)

    2008-04-15

    Silicon oxynitride (Si{sub x}O{sub y}N{sub z}) layers were synthesized by implanting {sup 16}O{sub 2}{sup +} and {sup 14}N{sub 2}{sup +} 30 keV ions in 1:1 ratio with fluences ranging from 5 x 10{sup 16} to 1 x 10{sup 18} ions cm{sup -2} into single crystal silicon at room temperature. Rapid thermal annealing (RTA) of the samples was carried out at different temperatures in nitrogen ambient for 5 min. The FTIR studies show that the structures of ion-beam synthesized oxynitride layers are strongly dependent on total ion-fluence and annealing temperature. It is found that the structures formed at lower ion fluences ({approx}1 x 10{sup 17} ions cm{sup -2}) are homogenous oxygen-rich silicon oxynitride. However, at higher fluence levels ({approx}1 x 10{sup 18} ions cm{sup -2}) formation of homogenous nitrogen rich silicon oxynitride is observed due to ion-beam induced surface sputtering effects. The Micro-Raman studies on 1173 K annealed samples show formation of partially amorphous oxygen and nitrogen rich silicon oxynitride structures with crystalline silicon beneath it for lower and higher ion fluences, respectively. The Ellipsometry studies on 1173 K annealed samples show an increase in the thickness of silicon oxynitride layer with increasing ion fluence. The refractive index of the ion-beam synthesized layers is found to be in the range 1.54-1.96.

  9. Effect of Ce+ Ion Implantation upon Oxidation Resistance of Superalloy K38G

    Institute of Scientific and Technical Information of China (English)

    Qian Yuhai; Li Meishuan; Duo Shuwang; Zhao Youming

    2005-01-01

    The oxidation behavior (isothermal and cyclic oxidation) of cast superalloy K38G and the effect of Ce+ ion implantation with dose of 1×1017 ions/cm2 upon its oxidation resistance at 900 and 1000 ℃ in air were investigated. Meanwhile, the influence of Ce+ implantation on oxidation behavior of K38G with pre-oxide scale at 1000 ℃ in air was compared. The pre-oxidation was performed at 1000 ℃ in static air for 0.25 and 1.5 h, respectively. It is shown that the homogeneous external mixture oxide of rutile TiO2+Cr2O3 and non-continuous internal oxide of Al2O3 are formed during the oxidation procedure in all the cases. The isothermal oxidation resistance and the cracking or spallation resistance of superalloy K38G implanted with Ce+ by both of the two different implantation ways are not improved notably. This may be attributed to the mixed oxide composition characteristics and the blocking effect differences of Ce+ segregation along the oxide grain boundaries on the transport process for different diffusing ions.

  10. Sequential multiple-step europium ion implantation and annealing of GaN

    KAUST Repository

    Miranda, S. M C

    2014-01-20

    Sequential multiple Eu ion implantations at low fluence (1×1013 cm-2 at 300 keV) and subsequent rapid thermal annealing (RTA) steps (30 s at 1000 °C or 1100 °C) were performed on high quality nominally undoped GaN films grown by metal organic chemical vapour deposition (MOCVD) and medium quality GaN:Mg grown by hydride vapour phase epitaxy (HVPE). Compared to samples implanted in a single step, multiple implantation/annealing shows only marginal structural improvement for the MOCVD samples, but a significant improvement of crystal quality and optical activation of Eu was achieved in the HVPE films. This improvement is attributed to the lower crystalline quality of the starting material, which probably enhances the diffusion of defects and acts to facilitate the annealing of implantation damage and the effective incorporation of the Eu ions in the crystal structure. Optical activation of Eu3+ ions in the HVPE samples was further improved by high temperature and high pressure annealing (HTHP) up to 1400 °C. After HTHP annealing the main room temperature cathodo- and photoluminescence line in Mg-doped samples lies at ∼ 619 nm, characteristic of a known Mg-related Eu3+ centre, while after RTA treatment the dominant line lies at ∼ 622 nm, typical for undoped GaN:Eu. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Radiation damage in urania crystals implanted with low-energy ions

    Science.gov (United States)

    Nguyen, Tien Hien; Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis; Nowicki, Lech; Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy

    2014-05-01

    Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO2 (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO2 crystals under irradiation unseen by the measurement of RDA.

  12. Radiation damage in urania crystals implanted with low-energy ions

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Tien Hien, E-mail: tien-hien.nguyen@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Garrido, Frédérico; Debelle, Aurélien; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France); Nowicki, Lech [The Andrzej Soltan Institute for Nuclear Studies, Hoza 69, 00-681 Warsaw (Poland); Thomé, Lionel; Bourçois, Jérôme; Moeyaert, Jérémy [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM – UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiments 104-108, 91405 Orsay Campus (France)

    2014-05-01

    Implantations with low-energy ions (470-keV Xe and 500-keV La with corresponding ion range Rp ∼ 85 nm and range straggling ΔRp ∼ 40 nm) have been performed to investigate both radiation and chemical effects due to the incorporation of different species in UO{sub 2} (urania) crystals. The presence of defects was monitored in situ after each implantation fluence step by the RBS/C technique. Channelling data were analysed afterwards by Monte-Carlo simulations with a model of defects involving (i) randomly displaced atoms (RDA) and (ii) distorted rows, i.e. bent channels (BC). While increasing the ion fluence, the accumulation of RDA leads to a steep increase of the defect fraction in the range from 4 to 7 dpa regardless of the nature of bombarding ions followed by a saturation plateau over a large dpa range. A clear difference of 6% in the yield of saturation plateaus between irradiation with Xe and La ions was observed. Conversely, the evolutions of the fraction of BC showed a similar regular increase with increasing ion fluence for both ions. Moreover, this increase is shifted to a larger fluence in comparison to the sharp increase step of RDA. This phenomenon indicates a continuous structural modification of UO{sub 2} crystals under irradiation unseen by the measurement of RDA.

  13. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Marques, C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Franco, N. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, L.C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Silva, R.C. da [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, E. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal)]. E-mail: ealves@itn.pt; Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, C.J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2007-04-15

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10{sup 17} cm{sup -2} at room temperature, followed by annealing at 1000 deg. C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  14. Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

    Science.gov (United States)

    Hall, C.; Mu, R.; Tung, Y. S.; Ueda, A.; Henderson, D. O.; White, C. W.

    1997-01-01

    We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

  15. Radiochemical neutron activation analysis for certification of ion-implanted phosphorus in silicon.

    Science.gov (United States)

    Paul, Rick L; Simons, David S; Guthrie, William F; Lu, John

    2003-08-15

    A radiochemical neutron activation analysis procedure has been developed, critically evaluated, and shown to have the necessary sensitivity, chemical specificity, matrix independence, and precision to certify phosphorus at ion implantation levels in silicon. 32P, produced by neutron capture of 31P, is chemically separated from the sample matrix and measured using a beta proportional counter. The method is used here to certify the amount of phosphorus in SRM 2133 (Phosphorus Implant in Silicon Depth Profile Standard) as (9.58 +/- 0.16) x 10(14) atoms x cm(-2). A detailed evaluation of uncertainties is given.

  16. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Science.gov (United States)

    Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Safran, G.; McHargue, C. J.

    2007-04-01

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  17. Structural Investigation of Small Cu Clusters Obtained by Ion-Implantation in Amorphous Silica

    OpenAIRE

    1997-01-01

    In this paper we present an EXAFS study on Cu clusters obtained by ion-implantation in amorphous silica substrates. As-implanted and 700°C annealed samples were analyzed both at liquid nitrogen temperature and room temperature in order to determine the structural parameters. Evidence of a lattice contraction beyond the anharmonic correction were found in the tiniest particles, as well as a clear contribution of static disorder to the total Debye-Waller factor. No change of the Debye temperatu...

  18. Nitrogen mass transfer models for plasma-based low-energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Bocong; Wang, Kesheng; Zhang, Zhipeng; Che, Honglong; Lei, Mingkai, E-mail: mklei@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)

    2015-03-15

    The nitrogen mass transfer process in plasma-based low-energy ion implantation (PBLEII) is theoretically and experimentally studied in order to explore the process mechanism of PBLEII and therefore to optimize the apparatus design and the process conditions. An electron cyclotron resonance (ECR) microwave discharge generates the nitrogen plasma with a high density of 10{sup 11}–10{sup 12} ions/cm{sup 3}, which diffuses downstream to the process chamber along the divergent magnetic field. The nitrogen ions in the plasma implant into the surface and transport to the matrix of an austenitic stainless steel under the low negative pulsed bias of −2 kV at a process temperature of 400 °C. A global plasma model is used to simulate the ECR microwave plasma discharge for a range of working pressures and microwave powers. The fluid models are adopted to calculate the plasma downstream diffusion, the sheath expansion and the low-energy ion implantation on the surface. A nonlinear kinetic discrete model is established to describe the nitrogen transport in the austenitic stainless steel and the results are compared with the experimental measurements. Under an average implantation current density of 0.3–0.6 mA/cm{sup 2}, the surface nitrogen concentration in the range from 18.5 to 29 at. % is a critical factor for the nitrogen transport in the AISI 304 austenitic stainless steel by PBLEII, which accelerates the implanted nitrogen diffusion inward up to 6–12 μm during a nitriding time of 4 h.

  19. Plasma-based ion implantation and deposition: A review of physics,technology, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Pelletier, Jacques; Anders, Andre

    2005-05-16

    After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

  20. Characterization and antibacterial performance of ZrCN/amorphous carbon coatings deposited on titanium implants

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Chih-Ho [School of Medicine, China Medical University, Taichung, 404 Taiwan (China); Chang, Yin-Yu, E-mail: yinyu@mail2000.com.tw [Department of Mechanical and Computer-Aided Engineering, National Formosa University, Yunlin, Taiwan (China); Huang, Heng-Li [School of Dentistry, China Medical University, Taichung, Taiwan (China); Kao, Ho-Yi [Department of Materials Science and Engineering, Mingdao University, Changhua, Taiwan (China)

    2011-12-30

    Titanium (Ti)-based materials have been used for dental/orthopedic implants due to their excellent biological compatibility, superior mechanical strength and high corrosion resistance. The osseointegration of Ti implants is related to their composition and surface treatment. Better biocompatibility and anti-bacterial performances of Ti implant are beneficial for the osseointegration and for avoiding the infection after implantation surgery. In this study, nanocomposite ZrCN/amorphous carbon (a-C) coatings with different carbon contents were deposited on a bio-grade pure Ti implant material. A cathodic-arc evaporation system with plasma enhanced duct equipment was used for the deposition of ZrCN/a-C coatings. Reactive gas (N{sub 2}) and C{sub 2}H{sub 2} activated by the zirconium plasma in the evaporation process were used to deposit the ZrCN/a-C coatings. To verify the susceptibility of implant surface to bacterial adhesion, Actinobacillus actinomycetemcomitans (A. actinomycetemcomitans), one of the major pathogen frequently found in the dental implant-associated infections, was chosen for in vitro anti-bacterial analyses. In addition, the biocompatibility of human gingival fibroblast (HGF) cells on coatings was also evaluated by a cell proliferation assay. The results suggested that the ZrCN/a-C coatings with carbon content higher than 12.7 at.% can improve antibacterial performance with excellent HGF cell compatibility as well.

  1. Effects of nitrogen ion implantation on lily pollen germination and the distribution of the actin cytoskeleton during pollen germination

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The effects of low energy nitrogen ion implantation on lily (Lilium davidii Duch.) pollen germination and the distribution of the actin cytoskeleton during pollen germination have been studied. Preliminary results showed that the ratio of pollen germination increased from (16.0±1.6)% to (27.0±2.1)% when implanted with nitrogen ions by 100 keV and a dose of 1013 ions/cm2. Further experiments were performed by staining the actin filaments in pollen with rhodamine-phalloidin and detected by using laser confocol microscopy. After hydration for 10 h, the actin filaments in ion implanted pollen grains tended to form thick bundles oriented in parallel or ring shape at the germinal furrow, indicating that the effect of nitrogen ion implantation on the germination of pollen might be mediated by reorganization of the actin cytoskeleton.

  2. Study of structural modifications induced by ion implantation in austenitic stainless steel; Etude des modifications structurales induites par implantation ionique dans les aciers austenitiques

    Energy Technology Data Exchange (ETDEWEB)

    Dudognon, J

    2006-12-15

    Ion implantation in steels, although largely used to improve the properties of use, involves structural modifications of the surface layer, which remain still prone to controversies. Within this context, various elements (N, Ar, Cr, Mo, Ag, Xe and Pb) were implanted (with energies varying from 28 to 280 keV) in a 316LVM austenitic stainless steel. The implanted layer has a thickness limited to 80 nm and a maximum implanted element concentration lower than 10 % at. The analysis of the implanted layer by grazing incidence X ray diffraction highlights deformations of austenite lines, appearance of ferrite and amorphization of the layer. Ferritic phase which appears at the grain boundaries, whatever the implanted element, is formed above a given 'threshold' of energy (produced of fluency by the energy of an ion). The formation of ferrite as well as the amorphization of the implanted layer depends only on energy. In order to understand the deformations of austenite diffraction lines, a simulation model of these lines was elaborated. The model correctly describes the observed deformations (broadening, shift, splitting) with the assumption that the expansion of the austenitic lattice is due to the presence of implanted element and is proportional to the element concentration through a coefficient k'. This coefficient only depends on the element and varies linearly with its radius. (author)

  3. Distribution of implanted ions in seeds and roots of mung bean

    Institute of Scientific and Technical Information of China (English)

    LiuDong-Hua; HouWen-Qiang

    1998-01-01

    Doses of 1×1016,and 2×1016cmand 1×1016,2×1016,3×1016and 3.6×1016cm-2 for iron and cpper ioons are implanted in dry seeds of mung bean,respectively.The results show that the accumulated-copper and -iron ion amounts in the seeds and rrots vary with different doses of ion beam,and the fresh and dry weights of the roots decresase progressively with increasing iron and copper doses,except the treatment of 1×1016 Cu+ ions/cm2,and the accumulated-copper and -iron ion amounts in the seeds of the different test groups can be correlated with the ion distribution in the roots.

  4. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

    Science.gov (United States)

    Leilei, Li; Xinjie, Zhou; Zongguang, Yu; Qing, Feng

    2015-01-01

    The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO2 near back SiO2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices.

  5. A study of the structural properties of GaN implanted by various rare-earth ions

    Science.gov (United States)

    Mackova, A.; Malinský, P.; Sofer, Z.; Šimek, P.; Sedmidubský, D.; Mikulics, M.; Wilhelm, R. A.

    2013-07-01

    GaN layers with crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 × 1015-1 × 1016 cm-2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 × 1015 cm-2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 × 1015 cm-2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.

  6. P掺杂类金刚石薄膜的制备及生物学行为研究%Phosphorus doped diamond-like carbon films fabricated by plasma immersion ion implantation - deposition and study of biological behavior

    Institute of Scientific and Technical Information of China (English)

    王进; 杨萍; 陈俊英; 冷永祥; 万国江; 孙鸿; 赵安莎; 黄楠

    2004-01-01

    应用等离子体浸没离子注入与沉积方法合成了磷掺杂的类金刚石(diamond like carbon,DLC)薄膜.结构分析表明磷以微米级岛状结构分散于DLC薄膜表层,P的掺杂增加了DLC薄膜的无序性,俄歇能谱表明岛型区域是由P、C、O三种元素形成的化合物.掺杂表面表现出强烈的亲水性(水接触角为16.9°),体外血小板粘附实验结果显示,P掺杂DLC薄膜表面粘附的血小板少且变形小,表现出的血液相容性优于热解碳和未改性DLC.

  7. The effects of ion implantation on the beaks of orthodontic pliers

    Energy Technology Data Exchange (ETDEWEB)

    Mizrahi, E.; Cleaton-Jones, P.E.; Luyckz, S.; Fatti, L.P. (University of the Witwatersrand (South Africa))

    1991-06-01

    The surface of stainless steel may be hardened by bombarding the material with a stream of nitrogen ions generated by a nuclear accelerator. In the present study this technique was used to determine the hardening effect of ion implantation on the beaks of stainless steel orthodontic pliers. Ten orthodontic pliers (Dentarum 003 094) were divided into two equal groups, designated control and experimental. The beaks of the experimental pliers were subjected to ion implantation, after which the tips of the beaks of all the pliers were stressed in an apparatus attached to an Instron testing machine. A cyclical load of 500 N was applied to the handles of the pliers, while a 0.9 mm (0.036 inch) round, stainless steel wire was held between the tips of the beaks. The effect of the stress was assessed by measurement with a traveling microscope of the gap produced between the tips of the beaks. Measurements were taken before loading and after 20, 40, 60, and 80 cycles. Statistical analysis of variance and the two-sample t tests indicated that there was a significant increase in the size of the gap as the pliers were stressed from 0 to 80 cycles (p less than 0.001). Furthermore, the mean gap was significantly greater in the control group than in the experimental group (p less than 0.001). This study suggests that ion implantation increases the hardness of the tips of the beaks of orthodontic pliers.

  8. Effect of Mo Ion Implantation on Stability of Nanocrystalline Copper Surface Layers

    Directory of Open Access Journals (Sweden)

    XI Yang

    2016-08-01

    Full Text Available The surface of pure copper was modified using the surface mechanical attrition treatment (SMAT method, and molybdenum ions were implanted in the nanosurface using a metal vapor vacuum arc (MEVVA. The results of the SMAT were observed by optical microscopy (OM, X-ray diffraction (XRD and scanning electron microscopy (SEM. An obvious nanocrystalline layer and a deformation region exist on the surface. The size of the nanocrystalline layer was characterized using atomic force microscopy (AFM. The results indicate remarkable suppression on grain size, the nanocrystalline layer grows to 163nm after annealing and reduces to only 72nm due to the Mo ion implantation. In addition, the hardness of the topmost surface of the material is 3.5 times that of the SMATed copper, which is about 7 times of the value of the matrix. The above improvements most likely result from the dispersion of the Mo ions and the reactions of the crystal defects due to the SMAT and ion implantation.

  9. Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes S/N, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes S/N, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes S/N, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes S/N, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes S/N, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes S/N, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A predictive damage accumulation model, which takes into account different interdependent implant parameters, has been developed. The model assumes that the recrystallization rate of damage structures known as amorphous pockets (AP) is a function of its effective size, regardless of their spatial configuration. In the model, APs are three-dimensional agglomerates of interstitials (I) and vacancies (V), whose initial coordinates are generated by a binary collision approximation (BCA) code. This work addresses the importance of the spatial correlation of I's and V's in modeling damage accumulation and amorphization, by comparing simulations, whereby the initial coordinates of I and V are generated by BCA or randomly generated from the concentration distribution of an input damage profile. Low temperature implantations were simulated to avoid dynamic annealing in order to compare the initial damage morphology. For the same damage level, simulations by BCA resulted in ion mass dependent APs' sizes, with lighter implant ions generating smaller APs' sizes, implying more dilute damage compared with heavier ions. However, the ion mass dependent APs' size effect was lost by loading the same damage profile and randomly positioning the I's and V's. Consequently, the damage morphology, as well as the annealing behaviour obtained by reading I, V damage profiles is substantially different from those obtained using the much more realistic cascades generated by BCA.

  10. Uranium passivation by C+ implantation: a photoemission and secondary ion mass spectrometry study

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A J; Felter, T E; Wu, K J; Evans, C; Ferreira, J; Siekhaus, W; McLean, W

    2005-01-20

    Implantation of 33 keV C{sup +} ions into polycrystalline U{sup 238} with a dose of 4.3 x 10{sup 17} cm{sup -2} produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C{sup +} ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two regions. The U 4f, O 1s and C 1s core-level and valence band spectra clearly indicate carbide formation in the modified surface layer. The time-of-flight secondary ion mass spectrometry depth profiling results reveal an oxy-carbide surface layer over an approximately 200 nm thick UC layer with little or no residual oxidation at the carbide layer/U metal transitional interface.

  11. P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation

    Institute of Scientific and Technical Information of China (English)

    HE Bin; CHEN Guang-Hua; LI Zhi-Zhong; DENG Jin-Xiang; ZHANG Wun-Jun

    2008-01-01

    A boron nitride(BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si(111)substrates.The FTIR observations indicate that the films deposited have a mixed phase composition of sp2-and sp3-hybridized BN.Considering the thickness of the BN layer.the ion implantation is conducted at an ion energy of 100ke V with the dose of 5×1015cm-2.After annealing at a high temperature,the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×105Ω.Space-charge-limited current characteristic.which indicates the existence of shallow traps in the film,is observed.Current-voltage measurements across the BN film and the Si substrate reveal a clear rectification feature,demonstrating the achievement of p-type doping of BN films by Be ion implantation.

  12. Making junctions between carbon nanotubes using an ion beam

    CERN Document Server

    Krasheninnikov, A V; Keinonen, J; Banhart, F

    2003-01-01

    Making use of empirical potential molecular dynamics, we study ion bombardment of crossed single-walled carbon nanotubes as a tool to join the nanotubes. We demonstrate that ion irradiation should result in welding of crossed nanotubes, both suspended and deposited on substrates. We further predict optimum ion doses and energies for ion-mediated nanotube welding which may potentially be used for developing complicated networks of joined nanotubes.

  13. Low-temperature technique of thin silicon ion implanted epitaxial detectors

    Science.gov (United States)

    Kordyasz, A. J.; Le Neindre, N.; Parlog, M.; Casini, G.; Bougault, R.; Poggi, G.; Bednarek, A.; Kowalczyk, M.; Lopez, O.; Merrer, Y.; Vient, E.; Frankland, J. D.; Bonnet, E.; Chbihi, A.; Gruyer, D.; Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M. F.; Salomon, F.; Bini, M.; Valdré, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S.; Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E.; Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M.; Alba, R.; Santonocito, D.; Maiolino, C.; Cinausero, M.; Gramegna, F.; Marchi, T.; Kozik, T.; Kulig, P.; Twaróg, T.; Sosin, Z.; Gaşior, K.; Grzeszczuk, A.; Zipper, W.; Sarnecki, J.; Lipiński, D.; Wodzińska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyżak, K.; Tarasiuk, K. J.; Khabanowa, Z.; Kordyasz, Ł.

    2015-02-01

    A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am ( = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr ( E = 35 A MeV) + 112Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

  14. Low-temperature technique of thin silicon ion implanted epitaxial detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kordyasz, A.J.; Bednarek, A. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); Le Neindre, N.; Bougault, R.; Lopez, O.; Merrer, Y.; Vient, E. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); Parlog, M. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania); Casini, G.; Poggi, G.; Bini, M.; Valdre, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S. [INFN Firenze, Sesto Fiorentino (Italy); Universita di Firenze, Sesto Fiorentino (Firenze) (Italy); Kowalczyk, M. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Frankland, J.D.; Bonnet, E.; Chbihi, A.; Gruyer, D. [CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France); Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France); Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E. [Universita di Napoli ' ' Federico II' ' , Dipartimento di Scienze Fisiche, Napoli (Italy); INFN, Napoli (Italy); Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Alba, R.; Santonocito, D.; Maiolino, C. [INFN, Catania (Italy); Universita di Catania, LNS, Catania (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN LNL Legnaro, Legnaro (Padova) (Italy); Kozik, T.; Kulig, P.; Twarog, T.; Sosin, Z. [Jagiellonian University, Cracow (Poland); Gasior, K.; Grzeszczuk, A.; Zipper, W. [University of Silesia, Silesian University, Katowice (Poland); Sarnecki, J.; Lipinski, D.; Wodzinska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyzak, K. [Institute of Electronic Materials Technology, Warsaw (Poland); Tarasiuk, K.J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Khabanowa, Z. [Faculty of Physics, Warsaw University of Technology, Warsaw (Poland); Kordyasz, L. [Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

    2015-02-01

    A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B{sup +} ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from {sup 241}Am (left angle E{sub α} right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm{sup 2}) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction {sup 84}Kr (E = 35 A MeV) + {sup 112}Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

  15. Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    PENG Jucun; WU Boying; CHEN Jie; ZHAO Jie; WANG Yongchen

    2006-01-01

    A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.

  16. Simultaneous Sterilization With Surface Modification Of Plastic Bottle By Plasma-Based Ion Implantation

    Science.gov (United States)

    Sakudo, N.; Ikenaga, N.; Ikeda, F.; Nakayama, Y.; Kishi, Y.; Yajima, Z.

    2011-01-01

    Dry sterilization of polymeric material is developed. The technique utilizes the plasma-based ion implantation which is same as for surface modification of polymers. Experimental data for sterilization are obtained by using spores of Bacillus subtilis as samples. On the other hand we previously showed that the surface modification enhanced the gas barrier characteristics of plastic bottles. Comparing the implantation conditions for the sterilization experiment with those for the surface modification, we find that both sterilization and surface modification are simultaneously performed in a certain range of implantation conditions. This implies that the present bottling system for plastic vessels will be simplified and streamlined by excluding the toxic peroxide water that has been used in the traditional sterilization processes.

  17. Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties

    Institute of Scientific and Technical Information of China (English)

    FA Tao; XIANG Qing-Pei; YAO Shu-De

    2009-01-01

    We use ion implantation as a new approach to build an anti-ferromagnetic(AFM)cluster embedded exchange bias(EB)system.Co film with thickness of 130nm is deposited on the Si(111)substrate using magnetron sputtering,60keV O~+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface.By measuring the hysteresis loop after Reid-cooling,significant shifts of loop along the applied field are confirmed.When increasing the implantation dose to 2×10~(17)/cm~2 and annealed samples in N2 atmosphere,we obtain the highest HEB to 458 Oe.

  18. Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

    Science.gov (United States)

    Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R.

    2006-10-01

    Silicon nanocrystals, average sizes ranging between 3 and 7nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800°C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.

  19. Electrochemical Behavior of Adriamycin at Ni/GC Ion Implantation Modified Electrode

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    With a Ni/GC ion implantation modified electrode as working electrode, in 0.1 mol/L HOAc-NaOAc (pH=4.62) solution, a sensitive reductive wave of ADM was obtained by linear sweep voltammetry. The peak potential was -0.55 V (vs.SCE). The peak current is proportional to the concentration of ADM with a detection limit of 6.9×10-8 mol/L. The behavior of the reduction wave was studied. The experiments of AES and XPS showed that Ni was surely implanted into the surface of the GCE and the implanted Ni at the GCE improved the electrocatalytic activity.

  20. Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping

    Energy Technology Data Exchange (ETDEWEB)

    Tetelbaum, D.I.; Mikhaylov, A.N.; Belov, A.I.; Korolev, D.S.; Shushunov, A.N.; Bobrov, A.I.; Pavlov, D.A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Shek, E.I.; Sobolev, N.A. [Ioffe Physical Technical Institute, St. Petersburg (Russian Federation)

    2015-01-01

    The depth distribution of light-emitting centers of the D1 dislocation-related photoluminescence line (∝ 1.5 μm) in silicon implanted with Si{sup +} ions and annealed at 1100 C in the oxidizing chlorine-containing atmosphere has been investigated by means of the layer-by-layer chemical etching. It is established with the application of cross-sectional transmission electron microscopy that the main contribution to the D1 line is made by the centers located at the depths of up to ∝ 150 nm, i.e. in the region of Si{sup +} ion ranges, whereas the dislocations produced by Si{sup +} implantation and annealing at 1100 C penetrate to the depth of ∝ 1000 nm. Additional boron ion doping with subsequent annealing at 800 C in N{sub 2} atmosphere improves the emission in comparison with the undoped but annealed reference sample, however the additional annealing at 800 C per se results in the photoluminescence weakening. The dependence of the D1 line intensity on boron ion dose is found to be nonmonotonous. The interpretation of the obtained results is given in relation to the key role of selfinterstitials and boron impurity in the formation of radiative and nonradiative centers. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Synthesis of endohedral iron-fullerenes by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Minezaki, H.; Ishihara, S. [Graduate School of Engineering, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350-8585 (Japan); Uchida, T., E-mail: uchida-t@toyo.jp [Bio-Nano Electronics Research Centre, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350-8585 (Japan); Muramatsu, M.; Kitagawa, A. [National Institute of Radiological Sciences (NIRS), 4-9-1, Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Rácz, R.; Biri, S. [Institute of Nuclear Research (ATOMKI), Bem tér 18/C, H-4026 Debrecen (Hungary); Asaji, T. [Oshima National College of Maritime Technology, 1091-1, Komatsu Suou Oshima-city Oshima, Yamaguchi 742-2193 (Japan); Kato, Y. [Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita-shi, Osaka 565-0871 (Japan); Yoshida, Y. [Graduate School of Engineering, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350-8585 (Japan); Bio-Nano Electronics Research Centre, Toyo University, 2100, Kujirai, Kawagoe, Saitama 350-8585 (Japan)

    2014-02-15

    In this paper, we discuss the results of our study of the synthesis of endohedral iron-fullerenes. A low energy Fe{sup +} ion beam was irradiated to C{sub 60} thin film by using a deceleration system. Fe{sup +}-irradiated C{sub 60} thin film was analyzed by high performance liquid chromatography and laser desorption/ ionization time-of-flight mass spectrometry. We investigated the performance of the deceleration system for using a Fe{sup +} beam with low energy. In addition, we attempted to isolate the synthesized material from a Fe{sup +}-irradiated C{sub 60} thin film by high performance liquid chromatography.

  2. Electron string ion sources for carbon ion cancer therapy accelerators

    CERN Document Server

    Boytsov, A Yu; Donets, E D; Donets, E E; Katagiri, K; Noda, K; Ponkin, D O; Ramzdorf, A Yu; Salnikov, V V; Shutov, V B

    2015-01-01

    The Electron String type of Ion Sources (ESIS) was developed, constructed and tested first in the Joint Institute for Nuclear Research. These ion sources can be the appropriate sources for production of pulsed C4+ and C6+ ion beams which can be used for cancer therapy accelerators. In fact the test ESIS Krion-6T already now at the solenoid magnetic field only 4.6 T provides more than 10^10 C4+ ions per pulse and about 5*10^9 C6+ ions per pulse. Such ion sources could be suitable for application at synchrotrons. It was also found, that Krion-6T can provide more than 10^11 C6+ ions per second at 100 Hz repetition rate, and the repetition rate can be increased at the same or larger ion output per second. This makes ESIS applicable at cyclotrons as well. As for production of 11C radioactive ion beams ESIS can be the most economic kind of ion source. To proof that the special cryogenic cell for pulse injection of gaseous species into electron string was successfully tested using the ESIS Krion-2M.

  3. Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Ashok; Nori, Rajashree; Bhatt, Piyush; Lodha, Saurabh; Pinto, Richard, E-mail: rpinto@ee.iitb.ac.in; Rao, Valipe Ramgopal [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Jomard, François; Neumann-Spallart, Michael [Groupe d' Étude de la Matière Condensée, C.N.R.S./Université de Versailles-St.Quentin, 45, Avenue des États-Unis, 78035 Versailles Cedex (France)

    2014-11-01

    A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH{sub 3} in H{sub 2} plasma have been ascribed to high concentration of H(α) radicals. Therefore, subsequent work was carried out with 5% PH{sub 3} in He, leading to much smaller etch rates. By optical emission spectroscopy, the radical species H(α), PH*{sub 2}, and PH* have been identified. The concentration of all three species increased with pressure. Also, ion concentrations increased with pressure as evidenced by Langmuir data, with a maximum occurring at 0.12 mbar. The duty cycle of pulsed DC bias has a significant bearing on both the implantation and the etching process as it controls the leakage of positive charge collected at the surface of the silicon wafer during pulse on-time generated primarily due to secondary electron emission. The P implant process was optimized for a duty cycle of 10% or less at a pressure of 0.12 mbar with implant times as low as 30 s. Secondary ion mass spectroscopy showed a P dopant depth of 145 nm after rapid thermal annealing (RTA) at 950 °C for 5 s, resulting in a sheet resistance of 77 Ω/◻. Si n{sup +}/p diodes fabricated with phosphorus implantation using optimized PIII and RTA conditions exhibit J{sub on}/J{sub off} > 10{sup 6} with an ideality factor of nearly 1.2. Using similar conditions, shallow doping profiles of B in silicon have also been realized.

  4. The microstructure and surface hardness of Ti6Al4V alloy implanted with nitrogen ions at an elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Vlcak, Petr, E-mail: petr.vlcak@fs.cvut.cz [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Cerny, Frantisek [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Drahokoupil, Jan [Department of Metals, Institute of Physics, AS CR, v.v.i., Na Slovance 2, 182 21 Prague (Czech Republic); Sepitka, Josef [Department of Mechanics, Biomechanics and Mechatronics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic); Tolde, Zdenek [Department of Materials Engineering, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, 16607 Prague (Czech Republic)

    2015-01-25

    Highlights: • The Ti6Al4V samples were implanted with 90 keV nitrogen ions. • The samples were annealed at 500 °C during the ion implantation process. • An elevated temperature increases the mobility of the atoms and the quantity of TiN. • The hardness showed a significant increase compared to room temperature implantation. - Abstract: The effect of an elevated temperature during nitrogen ion implantation on the microstructure and on the surface hardness of Ti6Al4V titanium alloy was examined. The implantation process was carried out at fluences of 1 ⋅ 10{sup 17}, 2.7 ⋅ 10{sup 17} and 6 ⋅ 10{sup 17} cm{sup −2} and at ion energy 90 keV. The implanted samples were annealed at 500 °C during the implantation process. X-ray diffraction analysis was performed to obtain a phase characterization and a phase quantification in the implanted sample surface. The surface hardness was investigated by nanoindentation testing, and the nitrogen depth distribution was measured by Rutherford Backscattering Spectroscopy. Elevated temperature led to increased formation of a TiN compound. It was found that a mixture of TiN and an α-Ti(+N) solid solution had a predominant amount of TiN for samples with fluence of 2.7 ⋅ 10{sup 17} cm{sup −2} or higher. Elevated temperature during ion implantation caused an increase in surface hardening more towards the depth of the substrate in comparison with room temperature implantation. The hardness showed a remarkably significant increase at a fluence of 1 ⋅ 10{sup 17} and 2.7 ⋅ 10{sup 17} cm{sup −2} compared to samples implanted at the same fluences and at room temperature. There is a discussion of such mechanisms that explain the observed hardening more towards the depth of the substrate, and the increase in hardness.

  5. Copper and silver ion implantation of aluminium oxide-blasted titanium surfaces: proliferative response of osteoblasts and antibacterial effects.

    Science.gov (United States)

    Fiedler, Jörg; Kolitsch, Andreas; Kleffner, Bernhard; Henke, Dietmar; Stenger, Steffen; Brenner, Rolf E

    2011-09-01

    Implant infection still represents a major clinical problem in orthopedic surgery. We therefore tested the in vitro biocompatibility and antibacterial effects of copper (Cu)- and silver (Ag)-ion implantation. Discs of a commonly used titanium alloy (Ti6AlV4) with an aluminium oxide-blasted surface were treated by Cu- or Ag-ion implantation with different dosage regimen (ranging from 1e15-17 ions cm(-2) at energies of 2-20 keV). The samples were seeded with primary human osteoblasts and cell attachment and proliferation was analyzed by an MTT-assay. In comparison to the reference titanium alloy there was no difference in the number of attached viable cells after two days. After seven days the number of viable cells was increased for Cu with 1e17 ions cm(-2) at 2 and 5 keV, and for Ag with 1e16 ions cm(-2) at 5 keV while it was reduced for the highest amount of Ag deposition (1e17 ions cm(-2) at 20 keV). Antibacterial effects on S.aureus and E.coli were marginal for the studied dosages of Cu but clearly present for Ag with 1e16 ions cm(-2) at 2 and 5 keV and 1e17 ions cm(-2) at 20 keV. These results indicate that Ag-ion implantation may be a promising methodological approach for antibacterial functionalization of titanium implants.

  6. Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Young, Matthew; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

    2016-11-21

    We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

  7. Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

    2016-12-01

    We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

  8. Nanoscale triboactivity of functionalized c-Si surfaces by Fe+ ion implantation

    Science.gov (United States)

    Nunes, B.; Alves, E.; Colaço, R.

    2016-04-01

    In the present work, we present a study of the effect of Fe+ ion implantation on the tribological response at nanoscale contact lengths of crystalline silicon (c-Si) surfaces. (1 0 0) silicon wafers were implanted with Fe+ at a fluence of 2  ×  1017 cm-2, followed by annealing treatments at temperatures of 800 °C and 1000 °C. After microstructural characterization, nanoabrasive wear tests were performed with an atomic force microscope (AFM) using an AFM diamond tip with a stiff steel cantilever that enables the application of loads between 1 μN and 8 μN. After the nanowear tests, the same AFM was used to visualize and measure the worn craters. It was observed that the as-implanted samples present the poorest nanowear response, i.e. the highest wear rate, even higher than that of the unimplanted Si wafers used as a reference. Nevertheless, annealing treatments result in a measurable increase in the nanowear resistance. In this way we show that Fe+ ion implantation of c-Si, followed by the proper post-heat treatment, results in the formation of FeSi2 nanoprecipitates finely dispersed in a recrystallized matrix. This can be a valuable way of optimizing the nanotribological behavior of silicon.

  9. Nitrogen ion implantation on stainless steel: AFM study of surface modification

    Energy Technology Data Exchange (ETDEWEB)

    Chico, B. [Dpto. Ingenieria de Materiales, Degradacion y Durabilidad, Centro Nacional de Investigaciones Metalurgicas (CENIM), CSIC, Avda. Gregorio del Amo, 8, 28040 Madrid (Spain)]. E-mail: bchico@cenim.csic.es; Martinez, L. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Perez, F.J. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, Ciudad Universitaria, 28040 Madrid (Spain)

    2005-04-30

    This work presents a study by means of atomic force microscopy (AFM) of the modification of the surface topography of AISI 304 austenitic stainless steel after N-ion implantation, irradiated by 1 x 10{sup 15} N{sub 2}{sup +}/cm{sup 2} at 80 keV. Prior to the implantation surface modification, the samples were electropolished for the optimum observation of the surface at a small scale to obtain an initial surface with the smaller roughness. The electrolytic bath was composed of a mixture of water/sulphuric acid/orthophosphoric acid in percentages 20, 20 and 60%, respectively. Once the surface was optimized, the samples were implanted and observed by AFM, a new technique whose importance relies on its resolution power, allowing the acquisition of topographic images of the surface with nanometric resolution. Thanks to the high resolution power could be observed that ion implantation increases the surface roughness and promotes the apparition of 3 {mu}m wide and 10 nm depth craters as well as the apparition of products with singular morphology.

  10. Modified carbon black materials for lithium-ion batteries

    Science.gov (United States)

    Kostecki, Robert; Richardson, Thomas; Boesenberg, Ulrike; Pollak, Elad; Lux, Simon

    2016-06-14

    A lithium (Li) ion battery comprising a cathode, a separator, an organic electrolyte, an anode, and a carbon black conductive additive, wherein the carbon black has been heated treated in a CO.sub.2 gas environment at a temperature range of between 875-925 degrees Celsius for a time range of between 50 to 70 minutes to oxidize the carbon black and reduce an electrochemical reactivity of the carbon black towards the organic electrolyte.

  11. Simulation two-beam high-dose ion implantation in solid-state targets

    CERN Document Server

    Komarov, A F

    2001-01-01

    The physicomathematical model and the program on the BEAM2HD dynamic modeling make it possible to model the process of the single- or two-beam high-dose ion implantation into the multilayer and multicomponent targets, is developed. The number of layer thereby does not exceed three and the number of various types of atoms in each layer does not exceed seven. The modeling is realized through the Monte-Carlo method. The numerical results of the work on formation of the C sub x sub-> sub 3 N sub y sub-> sub 4 supersolid layers through the nitrogen two-beam high-dose ion implantation into the Si sub 3 N sub 4 /C/Si sub 3 N sub 4 /Si multilayer system are presented

  12. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    Energy Technology Data Exchange (ETDEWEB)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  13. High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

    CERN Document Server

    Chi, P H; McKinley, J M; Stevie, F A; Granger, C N

    2002-01-01

    The metrology section of the 1999 International Technology Roadmap for Semiconductors specifies in-line dopant profile concentration precision requirements ranging from a value of 5% in 1999 to a value of 2% in 2008. These values are to be accomplished with ''low systematic error.'' Secondary ion mass spectrometry (SIMS) has demonstrated the capability to meet these requirements for B, As, and P. However, the detailed analytical protocols required to achieve these goals have not been completely specified. This article reports the parameters that must be controlled to make highly repeatable dose measurements of As and P implants in Si with magnetic sector SIMS instruments. Instrument conditions that were investigated include analytical species, matrix ion species, energy bandpass, and sample holder design. With optimized settings, we demonstrate the ability to distinguish As or P implant doses differing by 5%.

  14. An All Solid-State Pulsed Power Generator for Plasma Immersion Ion Implantation (PⅢ)

    Institute of Scientific and Technical Information of China (English)

    LIU Kefu; QIU Jian; WU Yifan

    2009-01-01

    An all solid-state pulsed power generator for plasma immersion ion implantation (PⅢ) is described. The pulsed power system is based on a Marx circuit configuration and semi-conductor switches, which have many advantages in adjustable repetition frequency, pulse width modulation and long serving life compared with the conventional circuit category, tube-based technologies such as gridded vacuum tubes, thyratrons, pulse forming networks and transformers.The operation of PⅢ with pulse repetition frequencies up to 500 Hz has been achieved at a pulse voltage amplitude from 2 kV to 60 kV, with an adjustable pulse duration from 1 μs to 100 μs.The proposed system and its performance, as used to drive a plasma ion implantation chamber,axe described in detail on the basis of the experimental results.

  15. Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation

    Directory of Open Access Journals (Sweden)

    Cui Xia Yan et al

    2008-01-01

    Full Text Available We have implanted boron (B ions (dosage: 5×1014 cm-2 into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.

  16. Automated Array Assembly, Phase 2. [making ion implanted and furnace annealed solar cells

    Science.gov (United States)

    Daiello, R. V.

    1979-01-01

    The large scale production of silicon solar cell array panels is discussed. The cost and performance of three manufacturing sequences designed to convert silicon sheet and wafers into solar panels is analyzed. The production of ion implanted and furnace annealed solar cells made using solar grade n- and p-type wafers is examined. The performance of production size lots is examined with regard to the relationship between the ion implant and furnace anneal parameters and the ability to form consistently good thick film screen printed contacts. The spray on antireflection coating process is evaluated. The performance of several lots of cells before and after coating is measured. The structure and refractive index of the RCA I (TiO2) coating is compared with commercial solutions. Sensitivity of coated, screen printed cells to the post heat treatment required to cure the films is assessed.

  17. Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Mangas, J.M. [Dpto. de Electricidad y Electronica, Universidad de Valladolid, ETSI Telecomunicaciones, Campus Miguel Delibes, Valladolid E-47011 (Spain)]. E-mail: jesus.hernandez.mangas@tel.uva.es; Arias, J. [Dpto. de Electricidad y Electronica, Universidad de Valladolid, ETSI Telecomunicaciones, Campus Miguel Delibes, Valladolid E-47011 (Spain); Marques, L.A. [Dpto. de Electricidad y Electronica, Universidad de Valladolid, ETSI Telecomunicaciones, Campus Miguel Delibes, Valladolid E-47011 (Spain); Ruiz-Bueno, A. [Dpto. de Electricidad y Electronica, Universidad de Valladolid, ETSI Telecomunicaciones, Campus Miguel Delibes, Valladolid E-47011 (Spain); Bailon, L. [Dpto. de Electricidad y Electronica, Universidad de Valladolid, ETSI Telecomunicaciones, Campus Miguel Delibes, Valladolid E-47011 (Spain)

    2005-01-01

    Currently there are extensive atomistic studies that model some characteristics of the damage buildup due to ion irradiation (e.g. L. Pelaz et al., Appl. Phys. Lett. 82 (2003) 2038-2040). Our interest is to develop a novel statistical damage buildup model for our BCA ion implant simulator (IIS) code in order to extend its ranges of applicability. The model takes into account the abrupt regime of the crystal-amorphous transition. It works with different temperatures and dose-rates and also models the transition temperature. We have tested it with some projectiles (Ge, P) implanted into silicon. In this work we describe the new statistical damage accumulation model based on the modified Kinchin-Pease model. The results obtained have been compared with existing experimental results.

  18. Implantation of anatase thin film with 100 keV {sup 56}Fe ions: Damage formation and magnetic behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, J. [Department of Engineering Sciences, Uppsala Universitet, P.O. Box 534, SE-751 21, Uppsala (Sweden)], E-mail: Jens.Jensen@telia.com; Sanz, R. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, ES-28049 Madrid (Spain); Martin, D. [Department of Engineering Sciences, Uppsala Universitet, P.O. Box 534, SE-751 21, Uppsala (Sweden); Surpi, A. [Department of Engineering Sciences, Uppsala Universitet, P.O. Box 534, SE-751 21, Uppsala (Sweden); Department of Biology and Chemical Engineering, Maelardalens Hoegskola, SE-632 20 Eskilstuna (Sweden); Kubart, T. [Department of Engineering Sciences, Uppsala Universitet, P.O. Box 534, SE-751 21, Uppsala (Sweden); Vazquez, M. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco, ES-28049 Madrid (Spain); Hernandez-Velez, M. [Applied Physics Department, Universidad Autonoma de Madrid, ES-28049 Madrid (Spain)

    2009-08-15

    We have investigated the damage morphology and magnetic properties of titanium dioxide thin films following implantation with Fe ions. The titanium dioxide films, having a polycrystalline anatase structure, were implanted with 100 keV {sup 56}Fe{sup +} ions to a total fluence of 1.3 x 10{sup 16} ions/cm{sup 2}. The ion bombardment leads to an amorphized surface with no indication of the presence of secondary phases or Fe clusters. The ion-beam induced damage manifested itself by a marked change in surface morphology and film thickness. A room temperature ferromagnetic behaviour was observed by SQUID in the implanted sample. It is believed that the ion-beam induced damage and defects in the polycrystalline anatase film were partly responsible for the observed magnetic response.

  19. Erbium-ion implantation into various crystallographic cuts of Al2O3

    Science.gov (United States)

    Nekvindova, P.; Mackova, A.; Malinsky, P.; Cajzl, J.; Svecova, B.; Oswald, J.; Wilhelm, R. A.

    2015-12-01

    This paper reports on the importance of crystallographic cuts with a different orientation on the luminescent properties and structural changes of Al2O3 implanted with Er+ ions at 190 keV and with a fluence of 1.0 × 1016 cm-2. Post-implantation annealing at 1000 °C in oxygen atmosphere was also done. The chemical compositions and erbium concentration-depth profiles of implanted layers were studied by Rutherford Backscattering Spectrometry (RBS) and compared to SRIM simulations. The same value of the maximum erbium concentration (up to 2 at.%) was observed at a depth of about 40 nm for all crystallographic cuts. The structural properties of the prepared layers were characterised by RBS/channelling. The relative amount of disordered atoms of 70-80% was observed in the prepared implanted layers and discussed for various cuts. It has been found that erbium is positioned randomly in the Al2O3 crystalline matrix, and no preferential positions appeared even after the annealing procedure. Erbium luminescence properties were measured in the wavelength range of 1440-1650 nm for all samples. As-implanted Al2O3 samples had a significant luminescence band at 1530 nm. The best luminescence was repeatedly observed in the cut of Al2O3. The annealing procedure significantly improved the luminescent properties.

  20. Tribological behavior of AISI302 austenitic stainless steel modified by elevated temperature nitrogen plasma immersion ion implantation

    Institute of Scientific and Technical Information of China (English)

    JIANG Shao-qun; MA Xin-xin; SUN Yue

    2004-01-01

    AISI302 stainless steel samples were modified by elevated temperature nitrogen plasma immersion ion implantation at temperature ranging from 330 ℃ to 450 ℃. The tribological behaviors of the implanted layers of the samples were investigated. The samples were characterized by Auger electron spectroscopy (AES), glancing angle X-ray diffraction (GXRD), and nanoindentation. The results show that the implantation temperature plays an important rule on the microstructure and surface properties of the implanted layers. The thickness of the modified layer implanted at 390 ℃ is about 9 μm. It is improved about two orders compared with that of the implanted at room temperature. The surface nanohardness and the wear resistance of elevated temperature implanted layers increase significantly, and the friction coefficient decreases obviously in comparison with the unimplanted one. These data suggests that the improvement results from the formation of new phases such as ε-(Fe, Cr, Ni)2+xN, or noncrystal phase.

  1. Impurity/defect interactions during MeV Si{sup +} ion implantation annealing

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, A.; Koveshnikov, S.; Christensen, K. [North Carolina State Univ., Raleigh, NC (United States)] [and others

    1995-08-01

    Ion implantation of dopant atoms at MeV energies is currently being explored in several integrated circuit device manufacturing processes. MeV implantation offers immediate advantages such as vertical well modulation, latch-up protection, device structure isolation, and reduced temperature processing. Simultaneously, it presents an opportunity to achieve {open_quotes}proximity{close_quotes} gettering of impurities from the active device region by placing high impurity solubility and/or secondary defect gettering sites within microns of the surface. If the MeV implanted species is a dopant ion, all three gettering mechanisms, i.e, segregation, relaxation and injection, can be involved in the gettering process, complicating the analysis and optimization of the process. However, investigation of gettering using non-dopant Si{sup +} ion damage allows the relaxation component of the gettering process to be isolated and examined separately. In general, gettering is verified by a reduction in impurity concentration in the region of interest, usually the device region, and/or a build-up of concentration/precipitation in a non-device sink region. An alternate and more meaningful approach is to use simple devices as materials characterization probes via changes in the electrical activity of the gettering sites. Device space charge probes also allow the evolution of the defect sites upon contamination to be tracked. We report here results of the electrical, structural, and chemical characterization of MeV implanted Si{sup +} damage using Deep Level Transient Spectroscopy (DLTS), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS). The damage has been characterized both as a function of annealing from 600 to 1100{degrees}C for 1 hr, and after contamination with Fe followed by low temperature gettering annealing.

  2. Study on hemocompatibility and corrosion behavior of ion implanted TiNi shape memory alloy and Co-based alloys.

    Science.gov (United States)

    Liang, Chenghao; Huang, Naibao

    2007-10-01

    Biomedical TiNi shape memory alloy and Co-based alloys were ion implanted, and corrosion resistance and hemocompatibility of these had been investigated with electrochemical method, dynamic clotting time, and hemolysis rate tests. The results indicated that the electrochemical stability and anodic polarization behavior of the materials were improved significantly after ion implantation. When TiNi, Co-based alloys were implanted Mo + C and Ti + C, respectively, the corrosion potentials were enhanced more than 200 mV, passive current densities decreased, and passive ranges were broadened. Dynamic clotting time of the ion implanted substances was prolonged and hemolysis rate decreased. All the results pointed out that corrosion resistance and hemocompatibility of the alloys were improved by ion implantation, and effects of dual implantation was better than that of C single implantation. X-ray diffraction analysis of the alloys after dual implantation revealed that TiC, Mo(2)C, Mo(9)Ti(4), and Mo appeared on the surface of TiNi alloy, and CoC(x), Co(3)Ti, TiC, and TiO on the surface of Co-based alloys. These phases dispersing on the alloy surface formed amorphous film, prevented dissolving of alloy elements and improved the corrosion resistance and hemocompatibility of the alloys.

  3. Analysis of layer splitting in x and z-cut KTiOPO4 implanted by H+ ions

    Science.gov (United States)

    Ma, Yu-Jie; Lu, Fei; Ma, Chang-Dong; Xu, Bo; Fan, Ranran

    2016-04-01

    H+ ions with various fluences are implanted into x and z-cut KTP crystals to achieve KTP film. Post-implantation annealing under different temperature is imposed on the samples to induce layer splitting and surface morphology modification. Layer exfoliation is observed in freestanding z-cut samples. Layer splitting is obtained using bonding method in x-cut sample implanted with 117 keV H+ ions at ion fluence of 6 × 1016 ions/cm2. Optical microscopy, scanning electron microscope and atomic force microscopy are used to observe splitting phenomenon. Rutherford backscattering spectroscopy/channeling method is employed to measure lattice damage and to investigate the relationship between implantation-induced defects and layer splitting.

  4. In vivo implant