WorldWideScience

Sample records for carbon ion implantation

  1. Study on organosilicon plasma polymers implanted by carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Radeva, E; Yourukova, L; Kolentsov, K; Balabanov, S; Zhechev, D; Steflekova, V [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Amov, B [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria)], E-mail: eradeva@issp.bas.bg

    2008-05-01

    In the present work plasma polymer films obtained from hexamethyldisiloxane have been implanted by carbon ions at three different doses. The photoluminescent properties of the implanted polymers were investigated. The optical transmission of these polymer layers was investigated in the visible spectral region. Their electrical parameters were also measured. It was found that the resulting changes do not worsen the protective properties of the implanted polymer layer. The variations in the properties studied might be ascribed to the nanostructured carbon clusters formed on the polymer surface. The results obtained could form the basis for further optimization of the polymer structure by carbon ion implantation in view of applications in electroluminescent display structures.

  2. Ion implantation inhibits cell attachment to glassy polymeric carbon

    International Nuclear Information System (INIS)

    Implantation of MeV gold, oxygen, carbon ions into GPC alters the surface topography of GPC and enhances the already strong tendency for cells to attach to GPC. We have shown that implantation of silver ions near the surface strongly inhibits cell growth on GPC. Both enhanced adhesion of and inhibition of cell growth are desirable improvements on cardiac implants that have long been successfully fabricated from biocompatible glassy polymeric carbon (GPC). In vitro biocompatibility tests have been carried out with model cell lines to demonstrate that ion beam assisted deposition (IBAD) of silver, as well as silver ion bombardment, can favorably influence the surface of GPC for biomedical applications

  3. Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

    International Nuclear Information System (INIS)

    Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 1017 ions-cm− 2, 2.4 × 1017 ions-cm− 2, and 4.8 × 1017 ions-cm− 2. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enriched region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation

  4. Characterization of surface enhancement of carbon ion-implanted TiN coatings by metal vapor vacuum arc ion implantation

    CERN Document Server

    Chang, C L

    2002-01-01

    The modification of the surfaces of energetic carbon-implanted TiN films using metal vapor vacuum arc (MEVVA) ion implantation was investigated, by varying ion energy and dose. The microhardness, microstructure and chemical states of carbon, implanted on the surface layer of TiN films, were examined, as functions of ion energy and dose, by nanoindenter, transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. Results revealed that the microhardness increased from 16.8 up to 25.3 GPa and the friction coefficient decreased to approximately 0.2, depending on the implanted ion energy and dose. The result is attributed to the new microcrystalline phases of TiCN and TiC formed, and carbon concentration saturation of the implanted matrix can enhance the partial mechanical property of TiN films after MEVVA treatment. The concentration distribution, implantation depth and chemical states of carbon-implanted TiN coatings depended strongly on the ion dose and...

  5. Electrical resistance of diamond implanted at liquid nitrogen temperature with carbon ions

    International Nuclear Information System (INIS)

    Carbon ion implantation of diamond to high fluence, below the temperature at which diamond growth can occur, usually leads to black layers of high conductivity. This study shows that for a low enough temperature of the diamond during implantation, a black layer with high electrical resistance can develop. In particular, carbon ion implantation at liquid nitrogen temperature, leads to an implanted layer with electrical resistance about one million times higher than the resistance obtained for implantation at temperatures above room temperature. (author)

  6. Ion implantation

    International Nuclear Information System (INIS)

    It is the purpose of the present paper to give a review of surface alloy processing by ion implantation. However, rather than covering this vast subject as a whole, the survey is confined to a presentation of the microstructures that can be found in metal surfaces after ion implantation. The presentation is limited to alloys processed by ion implantation proper, that is to processes in which the alloy compositions are altered significantly by direct injection of the implanted ions. The review is introduced by a presentation of the processes taking place during development of the fundamental event in ion implantation - the collision cascade, followed by a summary of the various microstructures which can be formed after ion implantation into metals. This is compared with the variability of microstructures that can be achieved by rapid solidification processing. The microstructures are subsequently discussed in the light of the processes which, as the implantations proceed, take place during and immediately after formation of the individual collision cascades. These collision cascades define the volumes inside which individual ions are slowed down in the implanted targets. They are not only centres for vigorous agitation but also the sources for formation of excess concentrations of point defects, which will influence development of particular microstructures. A final section presents a selection of specific structures which have been observed in different alloy systems. (orig./GSCH)

  7. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm-2 and 2 GeV xenon ion with a dose of 1E12 ions.cm-2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C3N4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C3N4 matrix was predominantly sp2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  8. Enhanced wear resistance of production tools and steel samples by implantation of nitrogen and carbon ions

    International Nuclear Information System (INIS)

    In recent years ion implantation has become a feasible technique for obtaining improved wear resistance of production tools. However, basic knowledge of how and in which cases ion implantation is working at its best is still needed. The present paper discusses structural and tribological investigations of carbon and nitrogen implanted steels. The nitrogen data were obtained mainly from field tests and the investigation of carbon implantations took place mainly in the laboratory. A study was made of how the tribological behaviour of implanted steels changes with different implantation parameters. The tribological laboratory investigations were carried out using pin-on-disc equipment under controlled test conditions, and deal with high dose carbon implantation (approximately (1-2)x1018 ions cm-2). The wear resistance of steels was enhanced dramatically, by up to several orders of magnitude. The field test results cover a broad range of ion implanted production tools, which showed a marked improvement in wear resistance. Nitrogen implanted tools are also compared with carbon and titanium implanted tools. (orig.)

  9. Peripheral nerve regeneration through a silicone chamber implanted with negative carbon ions: Possibility to clinical application

    Science.gov (United States)

    Ikeguchi, Ryosuke; Kakinoki, Ryosuke; Tsuji, Hiroshi; Yasuda, Tadashi; Matsuda, Shuichi

    2014-08-01

    We investigated whether a tube with its inner surface implanted with negative-charged carbon ions (C- ions) would enable axons to extend over a distance greater than 10 mm. The tube was found to support nerves regenerating across a 15-mm-long inter-stump gap. We also investigated whether a C- ion-implanted tube pretreated with basic fibroblast growth factor (bFGF) promotes peripheral nerve regeneration. The C- ion implanted tube accelerated nerve regeneration, and this effect was enhanced by bFGF. Silicone treated with C- ions showed increased hydrophilic properties and cellular affinity, and axon regeneration was promoted with this increased biocompatibility.

  10. Characterization of silicon and carbon dual ion-implanted metals with a nano-indentation

    International Nuclear Information System (INIS)

    The dual ion implantation of silicon and carbon into copper (99.9%), iron (99.9%), SKD11 steel and SUS304 austenitic stainless steels was carried out with a MeV energy ion accelerator. The cross-section of the implanted layer were observed with scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The surface layers of the implanted substrates were investigated with X-ray photoelectron spectroscopy (XPS) and a transmission electron microscope (TEM). The hardness of the samples was tested with a nano-indentation. It was found with XPS Si (2p) spectra and TEM that a part of the Si ions and C ions formed an amorphous layer of SiC, carbide and metals by dual ion-implantation. The hardness of the dual ion-implanted steels were improved. The mechanism of hardness was suggested by cross-sectional TEM images. (author)

  11. Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, H. E-mail: tsuji@kuee.kyoto-u.ac.jp; Izukawa, M.; Ikeguchi, R.; Kakinoki, R.; Sato, H.; Gotoh, Y.; Ishikawa, J

    2003-05-01

    Modification of polydimethylsiloxane (PDMS) rubber by negative ion-implantation was investigated for improvement of nerve regeneration property. The PDMS rubber surface was found to have more hydrophilic property after carbon negative-ion implantation than before. At the conditions of 10 keV and 3.0 x 10{sup 15} ions/cm{sup 2}, the contact angle decreased to 83 deg. from 100 deg. . The reason of the hydrophilic modification is due to hydrophilic functional groups such as hydroxyl formed at the surface by radiation effect of ion implantation. The in vivo regeneration test of rat sciatic nerve was performed by using 18-mm-long PDMS rubber tubes with inner diameter of 2 mm, the inner surface of which was implanted with carbon negative ions at the above conditions. At 24 weeks after the clinical surgery, the sciatic nerve was regenerated through the tube between the proximal and distal nerve stumps.

  12. Electrochemical properties of carbon materials implanted with high energy heavy ions

    International Nuclear Information System (INIS)

    Carbon materials have some allotropes such as diamond, graphite and amorphous carbon. These allotropes show significantly different natures depending on their structures. Ion implantation has two different effects on the modification of material surface layers, that is, the structural modification induced by the energy radiation accompanying ion beam bombardment, and the composition change introduced by doping surface layers with different elements. Carbon materials have been used as fuel, tools, electrical conductors, chemical instruments, electrochemical electrodes and composite materials because of their natures, such as the brightness and hardness of diamond and the chemical stability and electro-conductivity of black carbon. For all these uses, the surface properties are important, accordingly, ion implantation is an important technique for modifying the surface layers. In this paper, the main features of the ion implantation on the surface modification of diamond and glassy carbon substrates, and the chemical and electrochemical properties of glassy carbon implanted with various elements are reported. The electrode characteristics of ion-implanted glassy carbon are affected by the composition change and the change to amorphous form. (K.I.)

  13. Ion implanted pyrolitic carbon for the hip prosthesis

    International Nuclear Information System (INIS)

    Full text: Hip joint arthroplasty is a successful surgical procedure, but loosening induced by polyethylene wear debris continues to be a problem. Fine grained isotropic graphite (POCO ZXF-5Q) coated with Pyrolite (trademark of Carbomedics Inc.) combines biocompatibility, strength and tribological properties which could be utilised in a hip prosthesis. Some preliminary work has been conducted on this material, and the effect nitrogen ion implantation has on its wear resistance. Finite element analysis was conducted on a femoral head of a canine hip prosthesis with diameter 19mm made from POCO ZXF-5Q . An optimum design was obtained after design variables such as taper angle and width, internal recess radius, crown thickness were varied so that internal stresses were minimised. This was then translated into an human sized femoral head with diameter 28mm, which was subjected to mechanical testing. Loading was at 20 deg C to the taper, with loading rate 10kN/s used in static loading, whilst fatigue testing was carried out between 300 - 3000N at 30Hz for 107 cycles. Pin-on-disc wear testing was carried out using a CSEM Tribometer. A 1N load was applied to 6mm diameter pins. Wear track radii were 11 and 13mm, with linear velocity 5cm/s and sliding distance 2.5km. Test temperature was 37±1degC with Ringer solution and bovine serum being used as lubricant. Nitrogen implanted samples were irradiated to a dose of 5x1016 ions.cm-2 at 50keV. Static testing was carried out to loads of 8000N and all five POCO ZXF-5Q femoral heads tested survived. Then three of these pre-tested femoral heads were subjected to fatigue testing and no failures occured before 107 cycles. Wear was reduced by nitrogen ion implantation only when an irradiated pin was tested against as polished Pyrolite. Nitrogen ion implanted Pyrolite on a POCO ZXF-5Q substrate may have clinical potential. The substrate has appropriate mechanical properties, and nitrogen ion implantation can improve the already

  14. Nucleation and growth of carbon onions by means of simultaneous electron microscopic observation under ion implantation

    International Nuclear Information System (INIS)

    In-situ and ex-situ TEM observation was performed in copper implanted with carbon ions at temperature from 570 K to 973 K. Carbon clusters, such as carbon onions (concentric graphic spheres) and nanocapsules (concentric graphitic spheres with cavities), were observed with amorphous carbon layers. Statistics of cluster size as a function of implantation temperature, ion fluence and substrate crystallinity revealed the nucleation processes of the clusters. One is the formation of graphitic layers on grain boundaries. The other is the nucleation of graphitic cages, probably fullerenes, due to both high concentration of carbon atoms and high amount of radiation damage. Simultaneous observation of microstructural evolution under implantation revealed that onions were formed inside the substrate not surface and that they segregate at surface due to radiation-enhanced evaporation. (author)

  15. Carbon plasma immersion ion implantation of nickel-titanium shape memory alloys.

    Science.gov (United States)

    Poon, R W Y; Yeung, K W K; Liu, X Y; Chu, P K; Chung, C Y; Lu, W W; Cheung, K M C; Chan, D

    2005-05-01

    Nickel-titanium (NiTi) shape memory alloys possess super-elasticity in addition to the well-known shape memory effect and are potentially suitable for orthopedic implants. However, a critical concern is the release of harmful Ni ions from the implants into the living tissues. We propose to enhance the corrosion resistance and other surface and biological properties of NiTi using carbon plasma immersion ion implantation and deposition (PIII&D). Our corrosion and simulated body fluid tests indicate that either an ion-mixed amorphous carbon coating fabricated by PIII&D or direct carbon PIII can drastically improve the corrosion resistance and block the out-diffusion of Ni from the materials. Our tribological tests show that the treated surfaces are mechanically more superior and cytotoxicity tests reveal that both sets of plasma-treated samples favor adhesion and proliferation of osteoblasts. PMID:15585228

  16. Photoluminescence and reflectivity of polymethylmethacrylate implanted by low-energy carbon ions at high fluences

    International Nuclear Information System (INIS)

    Highlights: ► Photoluminescence was studied in carbon implanted polymethylmethacrylate (PMMA). ► A significant photoluminescence enhancement occurred at ion fluence of 5 × 1016 cm−2. ► Photoluminescence and Raman responses revealed carbon nanoclustered structures. ► Reflectivity of carbon implanted PMMA depended on both ion fluence and wavelength. ► A noticeable reflectivity modification appeared at ion fluence of 1 × 1016 cm−2. - Abstract: Polymethylmethacrylate (PMMA) specimens were implanted with 30 keV carbon ions in a fluence range of 1 × 1016 to 2 × 1017 cm−2, and photoluminescence (PL) and reflectivity of the implanted samples were examined. A luminescent band with one peak was found in PL spectra excited by 480 nm line, but its intensity did not vary in parallel with ion fluence. The strongest PL occurred at the fluence of 5 × 1016 cm−2. Results from visible-light-excited micro-Raman spectra indicated that the formation of hydrogenated amorphous carbon structures in subsurface layer and their evolutions with ion fluence could be responsible for the observed PL responses. Measurements of the small-angle reflectance spectra from both the implanted and rear surfaces of samples in the ultraviolet–visible (UV–vis) range demonstrated a kind of both fluence-dependent and wavelength-related reflectivity variations, which were attributed to the structural changes induced by ion implantation. A noticeable reflectivity modification, which may be practically used, could be found at the fluence of 1 × 1016 cm−2.

  17. Photoluminescence and reflectivity of polymethylmethacrylate implanted by low-energy carbon ions at high fluences

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jun; Zhu Fei; Zhang Bei; Liu Huixian; Jia Guangyi [School of Science, Tianjin University, Tianjin 300072 (China); Liu Changlong, E-mail: liuchanglong@tju.edu.cn [School of Science, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics Faculty of Science, Tianjin 300072 (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Photoluminescence was studied in carbon implanted polymethylmethacrylate (PMMA). Black-Right-Pointing-Pointer A significant photoluminescence enhancement occurred at ion fluence of 5 Multiplication-Sign 10{sup 16} cm{sup -2}. Black-Right-Pointing-Pointer Photoluminescence and Raman responses revealed carbon nanoclustered structures. Black-Right-Pointing-Pointer Reflectivity of carbon implanted PMMA depended on both ion fluence and wavelength. Black-Right-Pointing-Pointer A noticeable reflectivity modification appeared at ion fluence of 1 Multiplication-Sign 10{sup 16} cm{sup -2}. - Abstract: Polymethylmethacrylate (PMMA) specimens were implanted with 30 keV carbon ions in a fluence range of 1 Multiplication-Sign 10{sup 16} to 2 Multiplication-Sign 10{sup 17} cm{sup -2}, and photoluminescence (PL) and reflectivity of the implanted samples were examined. A luminescent band with one peak was found in PL spectra excited by 480 nm line, but its intensity did not vary in parallel with ion fluence. The strongest PL occurred at the fluence of 5 Multiplication-Sign 10{sup 16} cm{sup -2}. Results from visible-light-excited micro-Raman spectra indicated that the formation of hydrogenated amorphous carbon structures in subsurface layer and their evolutions with ion fluence could be responsible for the observed PL responses. Measurements of the small-angle reflectance spectra from both the implanted and rear surfaces of samples in the ultraviolet-visible (UV-vis) range demonstrated a kind of both fluence-dependent and wavelength-related reflectivity variations, which were attributed to the structural changes induced by ion implantation. A noticeable reflectivity modification, which may be practically used, could be found at the fluence of 1 Multiplication-Sign 10{sup 16} cm{sup -2}.

  18. Neuron attachment properties of carbon negative-ion implanted bioabsorbable polymer of poly-lactic acid

    International Nuclear Information System (INIS)

    Modification of a bioabsorbable polymer of poly-lactic acid (PLA) by negative carbon ion implantation was investigated with resect to radiation effects on surface physical properties and nerve-cell attachment properties. Carbon negative ions were implanted to PLA at energy of 5-30 keV with a dose of 1014-1016 ions/cm2. Most C-implanted PLA samples showed contact angles near 80 deg. and almost same as that of unimplanted PLA, although a few samples at 5 keV and less 3x1014 ions/cm2 had contact angles larger than 90 deg. The attachment properties of nerve cells of PC-12h (rat adrenal phechromocytoma) in vitro were studied. PC-12h cells attached on the unimplanted region in C-implanted PLA samples at 5 and 10 keV. On the contrary, the nerve cells attached on only implanted region for the C-implanted PLA sample at 30 keV and 1x1015 ions/cm2

  19. Immobilization of extracellular matrix on polymeric materials by carbon-negative-ion implantation

    Science.gov (United States)

    Tsuji, Hiroshi; Sommani, Piyanuch; Muto, Takashi; Utagawa, Yoshiyuki; Sakai, Shun; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo

    2005-08-01

    Effects of ion implantation into polystyrene (PS), silicone rubber (SR) and poly-L-lactic acid (PLA) have been investigated for immobilization of extracellular matrix. Carbon negative ions were implanted into PS and SR sheets at various energies between 5-30 keV and various doses between 1.0 × 1014-1.0 × 1016 ions/cm2. Contact angles of pure water on C-implanted surfaces of PS and SR were decreased as increase in ion energy and in dose due to formation of functional groups such as OH and C-O. Selective attachment of nerve cells was observed on C-implanted them at 10 keV and 3 × 1015 ions/cm2 after in vitro cell culture of nerve cells of PC-12 h. Neurite outgrowth also extended over the implanted area. After dipping in a serum medium and in a fibronectin solution for 2 h, the detection of N 1s electrons by X-ray induced photoelectron spectroscopic (XPS) revealed a significant distinction of protein adhesion on the implanted area. Thus, immobilization of proteins on surface is used for considering the selective cell-attachment. For PLA, the selective attachment of cells and protein depended on the implantation conditions.

  20. Effects of Mo ion implantation on rolling contact fatigue behavior of carbon steel

    International Nuclear Information System (INIS)

    Rolling Contact Fatigue (RCF) is one of the most serious material surface damage problems encountered by many critical components, especially in ball-bearing applications. RCF is sensitive to the material strength, hardness, surface morphology, microstructure and stress status, which may be dramatically changed by surface modifications. In present work, the surface modification of molybdenum ion implantation into quenched carbon steel was employed, and RCF tests on the implanted specimens, as well as the unimplanted, were performed. It was found out that carbon steel specimens, with and without ion implantation, have the same fatigue damage characteristics. They both have circular and fan-like pits on the fatigue failed surfaces, with many spherical debris existing in the fan-like pits. However, molybdenum ion implantation reduced the rolling contact fatigue life of quenched carbon steel. The possible reasons are the following: the ion beam current is too large, which causes the specimen to undergo the annealing process and soften during the implantation process; the incident angles of ions are different for different spots of curve specimen surface, which causes the uneven distribution of residual stress. These will promote the crack initiation and propagation

  1. Reduction of friction and wear by ion-implanted carbonized photoresist

    International Nuclear Information System (INIS)

    The influence of ion-implanted carbonized photoresist layers (AZ 5210) on wear and friction is discussed in this paper. Photoresist, an organic resin, was used because of the simplicity of coating the sample, accurate control of the layer thickness, and high amount of carbon. The samples investigated were coated by conventional spin-on techniques with layer thicknesses varying from 0.2 μm to 2.2μm. Subsequent ion bombardment at energies of 200 keV and 1.4 MeV with doses ranging from 1x1016 cm-2 to 1x1017 cm-2 caused carburization, densification, and a mixing of the layer with the steel substrate. Transmission electron microscopy investigations, Raman spectroscopy, elastic recoil detection analysis, and microhardness measurements confirmed the production of a hard, amorphous, hydrogen-containing (about 17%) carbon layer after implantation. The layers were deposited onto different steels (AISI 52100, AISI 440 B unhardened, and AISI M2) and after implantation of boron, aluminium, phosphorus, arsenic and titanium, showed a strongly reduced friction coefficient (lower than 0.2) and drastically reduced wear behaviour. The duration of the wear reduction depended on both the thickness of the carbonized photoresist layer and on the implanted ion dose. Doses of 5x1016 cm-2 for hard steels and doses of 1x1017 cm-2 for soft steels are necessary to produce a sufficient layer adhesion by ion beam mixing. (orig.)

  2. Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

    International Nuclear Information System (INIS)

    We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO2/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 1015 cm−2 onto the surface of the Ni/SiO2/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600–900 °C) to form a sp2-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics

  3. Ion-implanted Mechanism of the Deposition Process for Diamond-Like Carbon Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xue-Min; WU Wei-Dong; WANG Yu-Ying; WANG Hai-Ping; GE Fang-Fang; TANG Yong-Jian; JU Xin

    2011-01-01

    Due to the local densification, high-energy C and doped ions can greatly affect the bonding configurations of diamond-like carbon films. We investigate the corresponding affection of different incident ions with energy from WeV to 600eV by Monte Carlo methods. The ion-implanted mechanism called the subplantation (for C, N, O, W, Y, etc.) is confirmed. Obvious thermal effect could be induced by the subplantation of the incident ions. Further, the subplantation of C ions is proved by in situ reflection high energy electron diffraction (RHEED). The observation from an atomic force microscope (AFM) indicates that the initial implantation of C ions might result in the final primitive-cell-like morphology of the smooth film (in an area of 1.2 mm × 0.9 mm, rms roughness smaller than 20 nm by Wyko).

  4. Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

    International Nuclear Information System (INIS)

    We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions, followed by annealing at 950 °C in vacuum. Raman spectroscopy reveals IG/I2D values varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis. (paper)

  5. Effective Stress Reduction in Diamond Films on Alumina by Carbon Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    方志军; 夏义本; 王林军; 张伟丽; 马哲国; 张明龙

    2002-01-01

    We show the effective stress reduction in diamond films by implanting carbon ions into alumina substrates prior to the diamond deposition. Residual stresses in the films are evaluated by Raman spectroscopy and a more reliable method for stress determination is presented for the quantitative measurement of stress evolution. It is found that compressive stresses in the diamond films can be partly offset by the compressive stresses in the alumina substrates, which are caused by the ion pre-implantation. At the same time, the difference between the offset by the pre-stressed substrates and the total stress reduction indicates that some other mechanisms are also active.

  6. Irradiation effect of carbon negative-ion implantation on polytetrafluoroethylene for controlling cell-adhesion property

    Science.gov (United States)

    Sommani, Piyanuch; Tsuji, Hiroshi; Kojima, Hiroyuki; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo; Takaoka, Gikan H.

    2010-10-01

    We have investigated the irradiation effect of negative-ion implantation on the changes of physical surface property of polytetrafluoroethylene (PTFE) for controlling the adhesion property of stem cells. Carbon negative ions were implanted into PTFE sheets at fluences of 1 × 10 14-1 × 10 16 ions/cm 2 and energies of 5-20 keV. Wettability and atomic bonding state including the ion-induced functional groups on the modified surfaces were investigated by water contact angle measurement and XPS analysis, respectively. An initial value of water contact angles on PTFE decreased from 104° to 88° with an increase in ion influence to 1 × 10 16 ions/cm 2, corresponding to the peak shifting of XPS C1s spectra from 292.5 eV to 285 eV with long tail on the left peak-side. The change of peak position was due to decrease of C-F 2 bonds and increase of C-C bonds with the formation of hydrophilic oxygen functional groups of OH and C dbnd O bonds after the ion implantation. After culturing rat mesenchymal stem cells (MSC) for 4 days, the cell-adhesion properties on the C --patterned PTFE were observed by fluorescent microscopy with staining the cell nuclei and their actin filament (F-actin). The clear adhesion patterning of MSCs on the PTFE was obtained at energies of 5-10 keV and a fluence of 1 × 10 15 ions/cm 2. While the sparse patterns and the uncontrollable patterns were found at a low fluence of 3 × 10 14 ions/cm 2 and a high fluence of 3 × 10 15 ions/cm 2, respectively. As a result, we could improve the surface wettability of PTFE to control the cell-adhesion property by carbon negative-ion implantation.

  7. In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Oya, Y.; Sato, M.; Uchimura, H.; Okuno, K. [Graduate School of Science, Shizuoka University, Shizuoka (Japan); Ashikawa, N.; Sagara, A. [National Institute for Fusion Science, Gifu (Japan); Yoshida, N. [Institute for Applied Mechanics, Kyushu University, Kasuga (Japan); Hatano, Y. [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

    2015-03-15

    Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{sub 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)

  8. Modification of tribomechanical properties of commercial TiN coatings by carbon ion implantation

    International Nuclear Information System (INIS)

    Physical vapour deposited commercial TiN coatings of about 2μm thickness on high speed steel substrates were implanted at room temperature with 95keV carbon ions at nominal doses between 1x1017 and 8x1017ionscm-2. An ultra-microhardness apparatus (UMIS-2000) was used to measure hardness, and a pin-on-disc machine (CSEM tribometer) with a sapphire ball was used to measure wear, friction and adhesion. Carbon implantation induced a significant improvement in ultra-microhardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose φcrit is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by implantation. Proton elastic scattering (PES) measurements show loss of nitrogen after implantation by up to 27%. Rutherford backscattering (RBS) analysis indicated that some implanted carbon has diffused out from the implanted region towards the TiN surface. The changes in tribomechanical properties are discussed in terms of radiation damage and possible second phase formation. ((orig.))

  9. Waveguiding properties in Yb:YAG crystals implanted with protons and carbon ions.

    Science.gov (United States)

    Vázquez, G V; Ramírez, D; Márquez, H; Flores-Romero, E; Rickards, J; Trejo-Luna, R

    2012-08-01

    We report the fabrication and analysis of optical waveguides in Yb:YAG crystals using either proton or carbon ion implantation. Planar waveguides were obtained by implanting the whole surface of the crystals. Channel waveguides were defined using an electroformed mask with apertures of 10, 15, and 20 micrometers in width. The waveguiding properties of the structures were analyzed, showing good light confinement based on the transversal mode distribution and optical transmission measurements. The spectroscopic properties of the Yb ions in the YAG host are preserved after the implantation process, which demonstrates the potential of this technique for tailoring microcomponents for integrated optics applications. In particular, the Yb:YAG waveguides have the potential to operate as miniature lasers. PMID:22859050

  10. Mechanical properties of nickel ion-implanted with titanium and carbon and their relation to microstructure

    International Nuclear Information System (INIS)

    Dual ion implantation of titanium and carbon into nickel was shown to produce an amorphous layer with exceptionally high strength and hardness and substantially improved tribological properties. Indentation testing at submicrometer penetrations combined with finite-element modeling permitted quantification of the intrinsic elastic and plastic properties of the amorphous layer, which was found to have a yield strength near 5 GPa. During unlubricated sliding contact with a steel pin, the implantation treatment reduced friction, suppressed adhesion-and-fracture wear, and reduced wear depth. These tribological effects may enhance the performance and lifetime of microelectromechanical systems constructed from nickel

  11. Improvement on corrosion resistance of NiTi orthopedic materials by carbon plasma immersion ion implantation

    Science.gov (United States)

    Poon, Ray W. Y.; Ho, Joan P. Y.; Luk, Camille M. Y.; Liu, Xuanyong; Chung, Jonathan C. Y.; Chu, Paul K.; Yeung, Kelvin W. K.; Lu, William W.; Cheung, Kenneth M. C.

    2006-01-01

    Nickel-titanium shape memory alloys (NiTi) have potential applications as orthopedic implants because of their unique super-elastic properties and shape memory effects. However, the problem of out-diffusion of harmful Ni ions from the alloys during prolonged use inside a human body must be overcome before they can be widely used in orthopedic implants. In this work, we enhance the corrosion resistance of NiTi using carbon plasma immersion ion implantation and deposition (PIII&D). Our corrosion and simulated body fluid tests indicate that either an ion-mixed amorphous carbon coating fabricated by PIII&D or direct carbon PIII can drastically improve the corrosion resistance and block the out-diffusion of Ni from the materials. Results of atomic force microscopy (AFM) indicate that both C2H2-PIII&D and C2H2-PIII do not roughen the original flat surface to an extent that can lead to degradation in corrosion resistance.

  12. B and N ion implantation into carbon nanotubes: Insight from atomistic simulations

    International Nuclear Information System (INIS)

    By employing atomistic computer simulations with empirical potential and density functional force models, we study B/N ion implantation onto carbon nanotubes. We simulate irradiation of single-walled nanotubes with B and N ions and show that up to 40% of the impinging ions can occupy directly the sp2 positions in the nanotube atomic network. We further estimate the optimum ion energies for direct substitution. Ab initio simulations are used to get more insight into the structure of the typical atomic configurations which appear under the impacts of the ions. As annealing should further increase the number of sp2 impurities due to dopant atom migration and annihilation with vacancies, we also study migration of impurity atoms over the tube surface. Our results indicate that irradiation-mediated doping of nanotubes is a promising way to control the nanotube electronic and even mechanical properties due to impurity-stimulated crosslinking of nanotubes

  13. Photovoltage improvements in Cz–Si by low-energy implantation of carbon ions

    Science.gov (United States)

    Nadtochiy, A.; Korotchenkov, O.; Romanyuk, B.; Melnik, V.; Popov, V.

    2016-05-01

    We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above ≈550 °C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in implanted samples, which are subsequently annealed at 650 °C and 750 °C, is roughly two times greater than the appropriate values observed in unimplanted wafers. The effect in implanted samples is accompanied by longer time decays in the SPV transients (roughly from several to hundreds of microseconds). In marked contrast, unimplanted samples do not show such a significant difference in the decay times upon annealing. The decay times are fairly evenly distributed across the surface of the implanted but unannealed wafer, whereas the surface distribution function is essentially non-uniform in annealed samples. The results are discussed in terms of the temperature specific defect chemistry. The results of this work open new possibilities for studying defect rearrangement and clustering of atoms in implanted Si and advancing the development of silicon based photovoltaic materials with high photovoltage response. Supplementary data are available from stacks.iop.org/SST/.

  14. The tribological properties of nanometre carbon films prepared by plasma-based ion implantation at various implanting voltages

    International Nuclear Information System (INIS)

    About 30 nm thick nanometre carbon films have been prepared on Si wafers by plasma-based ion implantation at various implanting voltages. The ball-on-disc sliding friction experiments show that the tribological properties of these carbon films are in good agreement with the corresponding structure characteristics which strongly depend on the implanting voltage. These structure characteristics include the film roughness, the film thickness, the C-Si transition layer between the carbon film and the Si substrate and the sp3/sp2 ratio. As the implanting voltage increases, the roughness and the thickness decrease, the C-Si transition layer thickens and the sp3/sp2 ratio first increases to the maximum value at about 30 kV and then decreases. 3 kV and below correspond to bad tribological properties owing to polymer-like carbon (PLC) film and no C-Si transition layer with poor adhesion to the Si substrate. When the implanting voltage increases to over 3 kV, a C-Si transition layer is gradually formed and thickens with increasing adhesion, and the PLC film is gradually turned into a diamond-like carbon (DLC) film, and hence the tribological properties are gradually improved and reach the best values at 30 kV. 10-50 kV correspond to two orders of increase in wear life, close to zero volume wear rate, but about 0.3 friction coefficient at 0.1 N applied load. With the increase in the applied load, the wear life and the friction coefficient decrease and the wear rate increases. For Si wafers coated with the DLC films at 30 kV, in the range of 0.5-1 N, there is an appropriate value corresponding to the wear life of above 18 000 s, friction coefficient of about 0.1 and wear rate of 10-9 mm3 N-1 m-1 level. Additionally, the wear mechanism is discussed

  15. Tubular electrodeposition of chitosan-carbon nanotube implants enriched with calcium ions.

    Science.gov (United States)

    Nawrotek, Katarzyna; Tylman, Michał; Rudnicka, Karolina; Gatkowska, Justyna; Balcerzak, Jacek

    2016-07-01

    A new approach for obtaining chitosan-carbon nanotube implants enriched with calcium ions in the form of tubular hydrogels is fostered. The intended application of the hydrogels is tissue engineering, especially peripheral nervous tissue regeneration. The fabrication method, based on an electrodeposition phenomenon, shows significant advantages over current solutions as implants can now be obtained rapidly at any required dimensions. Thus, it may open a new avenue to treat patients with peripheral nerve injuries. Either single walled or multiwalled carbon nanotubes enhance the mechanical properties of the tubular hydrogels. The controlled presence of calcium ions, sourced from hydroxyapatite, is also expected to augment the regenerative response. Because in vitro cytotoxic assays on mouse cell lines (L929 fibroblasts and mHippoE-18 hippocampal cells) as well as pro-inflammatory tests on THP-1XBlue™ cells show that the manufactured implants are biocompatible, we next intend to evaluate their immune- and nervous-safety on an animal model. PMID:26913639

  16. Effects of carbon dioxide plasma immersion ion implantation on the electrochemical properties of AZ31 magnesium alloy in physiological environment

    Science.gov (United States)

    Xu, Ruizhen; Yang, Xiongbo; Zhang, Xuming; Wang, Mei; Li, Penghui; Zhao, Ying; Wu, Guosong; Chu, Paul K.

    2013-12-01

    Plasma immersion ion implantation (PIII) is conducted to improve the intrinsically poor corrosion properties of biodegradable AZ31 magnesium alloy in the physiological environment. Carbon dioxide is implanted into the samples and X-ray photoelectron spectroscopy and scanning electron microscopy are used to characterize the materials. The corrosion properties are systematically studied by potentiodynamic polarization tests in two simulated physiological environments, namely simulated body fluids and cell culture medium. The plasma-implanted materials exhibit a lower initial corrosion rate. Being a gaseous ion PIII technique, conformal ion implantation into an object with a complex shape such as an orthopedic implant can be easily accomplished and CO2 PIII is a potential method to improve the biological properties of magnesium and its alloys in clinical applications.

  17. Effects of carbon dioxide plasma immersion ion implantation on the electrochemical properties of AZ31 magnesium alloy in physiological environment

    International Nuclear Information System (INIS)

    Plasma immersion ion implantation (PIII) is conducted to improve the intrinsically poor corrosion properties of biodegradable AZ31 magnesium alloy in the physiological environment. Carbon dioxide is implanted into the samples and X-ray photoelectron spectroscopy and scanning electron microscopy are used to characterize the materials. The corrosion properties are systematically studied by potentiodynamic polarization tests in two simulated physiological environments, namely simulated body fluids and cell culture medium. The plasma-implanted materials exhibit a lower initial corrosion rate. Being a gaseous ion PIII technique, conformal ion implantation into an object with a complex shape such as an orthopedic implant can be easily accomplished and CO2 PIII is a potential method to improve the biological properties of magnesium and its alloys in clinical applications.

  18. Influence of Zn ion implantation on structures and field emission properties of multi-walled carbon nanotube arrays

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The structures and field emission properties of multi-walled carbon nanotube arrays implanted with Zn+ by MEVVA ion implanter have been investigated.The results revealed that Zn+implantation induced structural damage and that the top of carbon nanotubes with multi-layered graphite structure were transformed into carbon nanowires with amorphous structure.Meanwhile,C:Zn solid solution was synthesized after Zn+ implantation.The turn-on field and threshold field were 0.80 and 1.31 V/μm,respectively for original multi-walled carbon nanotube arrays and were reduced to 0.66 and 1.04 V/μm due to the synthesis of C and Zn composite,in which the work function was reduced after low doses of Zn+implantation.It is indicated that low doses of Zn+implantation can improve field emission performance of multi-walled carbon nanotube arrays.Otherwise,high doses of Zn+implantation can reduce field emission properties of multi-walled carbon nanotube arrays,because radiation damage reduces the electric field enhancement factor.

  19. Ion implantation technology

    CERN Document Server

    Downey, DF; Jones, KS; Ryding, G

    1993-01-01

    Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

  20. Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

    Energy Technology Data Exchange (ETDEWEB)

    Arif, Shafaq, E-mail: sarif2005@gmail.com [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Rafique, M. Shahid [Department of Physics, University of Engineering & Technology, Lahore 54000 (Pakistan); Saleemi, Farhat; Sagheer, Riffat [Department of Physics, Lahore College for Women University, Lahore 54000 (Pakistan); Naab, Fabian; Toader, Ovidiu [Department of Nuclear Engineering and Radiological Sciences, Michigan Ion Beam Laboratory, University of Michigan, MI 48109-2104 (United States); Mahmood, Arshad; Rashid, Rashad [National Institute of Lasers and Optronics (NILOP), P.O. Nilore, Islamabad (Pakistan); Mahmood, Mazhar [Department of Metallurgy & Materials Engineering, Pakistan Institute of Engineering & Applied Sciences (PIEAS), Islamabad (Pakistan)

    2015-09-01

    Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C{sup +} ion implantation effects on PMMA at different fluences ranging from 5 × 10{sup 13} to 5 × 10{sup 15} ions/cm{sup 2}. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV–Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 10{sup 14} to 5 × 10{sup 15} ions/cm{sup 2}. The existence of amorphization and sp{sup 2}-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV–Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10{sup −10} (Ω-cm){sup −1} (pristine) to (0.32 ± 0.01) × 10{sup −5} (Ω-cm){sup −1} (irradiated sample)

  1. Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

    International Nuclear Information System (INIS)

    Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C+ ion implantation effects on PMMA at different fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV–Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 1014 to 5 × 1015 ions/cm2. The existence of amorphization and sp2-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV–Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10−10 (Ω-cm)−1 (pristine) to (0.32 ± 0.01) × 10−5 (Ω-cm)−1 (irradiated sample)

  2. Diamondlike carbon deposition on plastic films by plasma source ion implantation

    International Nuclear Information System (INIS)

    Application of pulsed high negative voltage (∼10 μs pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron microscopy, and its structure characteristics are examined by XPS and laser Raman spectroscopy. Subsequent processing using acetylene or acetylene and Ar (20%) produced thin carbon layers that are confirmed to be graphite-dominated DLC. Also, this PSII method is employed in order to deposit the DLC layer on the inside surface of the PET bottle and to reduce oxygen permeation rate by 40%

  3. Diamondlike carbon deposition on plastic films by plasma source ion implantation

    Science.gov (United States)

    Tanaka, T.; Yoshida, M.; Shinohara, M.; Takagi, T.

    2002-05-01

    Application of pulsed high negative voltage (~10 μs pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron microscopy, and its structure characteristics are examined by XPS and laser Raman spectroscopy. Subsequent processing using acetylene or acetylene and Ar (20%) produced thin carbon layers that are confirmed to be graphite-dominated DLC. Also, this PSII method is employed in order to deposit the DLC layer on the inside surface of the PET bottle and to reduce oxygen permeation rate by 40%.

  4. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  5. Diamondlike carbon deposition on plastic films by plasma source ion implantation

    CERN Document Server

    Tanaka, T; Shinohara, M; Takagi, T

    2002-01-01

    Application of pulsed high negative voltage (approx 10 mu s pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N sub 2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N sub 2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron mic...

  6. The effect of ion implantation on the tribomechanical properties of carbon fibre reinforced polymers

    International Nuclear Information System (INIS)

    Graphite fibre reinforced epoxy composite material (GFRP) is used extensively in the aerospace and other industries for structural application. The trend is to address the 20 to 30 year life endurance of this material in service. Mechanical joints in air crafts are exposed to dynamic loads during service and wear may be experienced by the composite material joint. Generally it has been shown that graphite fibre reinforced polymers have superior wear and friction properties as compared with the unfilled polymers. In the described experiment, ion implantation was used as a novel surface treatment. Wear and friction of a polymer composite material (GFRP) was studied and ion implantation was used in order to observe the effect on the tribomechanical properties of the material. It was found that ion implantation of C on GFRP sliding against Ti changes the tribological properties of the system, and in particular decreases the coefficient of friction and wear. 4 refs., 2 figs

  7. The effect of ion implantation on the tribomechanical properties of carbon fibre reinforced polymers

    Energy Technology Data Exchange (ETDEWEB)

    Mistica, R.; Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Janardhana, M.N. [Deakin University, Geelong, VIC (Australia). School of Engineering and Technology

    1993-12-31

    Graphite fibre reinforced epoxy composite material (GFRP) is used extensively in the aerospace and other industries for structural application. The trend is to address the 20 to 30 year life endurance of this material in service. Mechanical joints in air crafts are exposed to dynamic loads during service and wear may be experienced by the composite material joint. Generally it has been shown that graphite fibre reinforced polymers have superior wear and friction properties as compared with the unfilled polymers. In the described experiment, ion implantation was used as a novel surface treatment. Wear and friction of a polymer composite material (GFRP) was studied and ion implantation was used in order to observe the effect on the tribomechanical properties of the material. It was found that ion implantation of C on GFRP sliding against Ti changes the tribological properties of the system, and in particular decreases the coefficient of friction and wear. 4 refs., 2 figs.

  8. Tribological property enhancement of CrN films by metal vapor vacuum arc implantation of Vanadium and Carbon ions

    International Nuclear Information System (INIS)

    CrN films have been extensively used in precision forming and molding applications because of their excellent tribological properties and oxidation-resisting characteristics. Vanadium and carbon ions are introduced into the near surface layer of deposited CrN films via metal vapor vacuum arc implantation to improve the wear performance of CrN films. Dense and smooth CrN film was deposited using a filtered arc deposition system, which provides fully ionized Cr plasma on the substrate surface. Subsequently, surface bombardment of the deposited CrN film with vanadium and carbon ions densifies the film and forms an alloy near the surface. These CrN-based films were characterized by X-ray photoelectron electron and Auger electron spectroscopies. Examinations of the tribological and mechanical film properties, including wear resistance, corrosion resistance and fracture toughness were performed and correlated with respect to the implantation parameters

  9. Optical properties and oxidation of carbonized and cross-linked structures formed in polycarbonate by plasma immersion ion implantation

    Science.gov (United States)

    Kosobrodova, E.; Kondyurin, A.; Chrzanowski, W.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2014-06-01

    At ion fluences higher than 5 · 1015 ions/cm2, plasma immersion ion implantation (PIII) of polycarbonate (PC) results in a formation of a carbonized surface layer. The thickness of this layer is close to the depth of ion penetration. A comparison of PIII treated, spin-coated PC films with pre-treatment thicknesses designed to match and exceed the carbonized layer thickness is employed to study the properties of the carbonised layer independently from the less modified underlying structure. At ion fluencies higher than 1016 ions/cm2, the thinner PC film is completely transformed into an amorphous carbon-like material with no traces of the initial PC structure. The thicker films, however, incorporated two layers: a top carbonised layer and a cross-linked layer below. Compared to the two-layered PC film, the completely carbonized layer was found to have a much higher concentration of Cdbnd O bonds and much lower concentration of O-H bonds after exposure to atmospheric oxygen. The refractive index of the thicker PC films PIII treated with high ion fluencies is close to the refractive index of diamond-like carbon. Anomalous dispersion of the refractive index of the thicker PC films is observed after formation of the carbonised layer. The refractive index of the thinner PC film has normal dispersion at all ion fluences. At ion fluences of 2 · 1016 ions/cm2, both PC films were found to have the same etching rate as polystyrene. Washing in dichloromethane had no effect on the carbonised layer but affected the underlying material in the case of the thicker PC films leading to a wrinkled structure up to ion fluences of 2 · 1016 ions/cm2. At this and higher fluence, areas of an ordered island-like structure were observed.

  10. Optical properties and oxidation of carbonized and cross-linked structures formed in polycarbonate by plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Highlights: • Structure and properties of polycarbonate films spin-coated on silicon are studied. • The films have two thicknesses: thicker and thinner than a depth of ion penetration. • Effect of radio frequency plasma and plasma immersion ion implantation is compared. - Abstract: At ion fluences higher than 5 · 1015 ions/cm2, plasma immersion ion implantation (PIII) of polycarbonate (PC) results in a formation of a carbonized surface layer. The thickness of this layer is close to the depth of ion penetration. A comparison of PIII treated, spin-coated PC films with pre-treatment thicknesses designed to match and exceed the carbonized layer thickness is employed to study the properties of the carbonised layer independently from the less modified underlying structure. At ion fluencies higher than 1016 ions/cm2, the thinner PC film is completely transformed into an amorphous carbon-like material with no traces of the initial PC structure. The thicker films, however, incorporated two layers: a top carbonised layer and a cross-linked layer below. Compared to the two-layered PC film, the completely carbonized layer was found to have a much higher concentration of C=O bonds and much lower concentration of O–H bonds after exposure to atmospheric oxygen. The refractive index of the thicker PC films PIII treated with high ion fluencies is close to the refractive index of diamond-like carbon. Anomalous dispersion of the refractive index of the thicker PC films is observed after formation of the carbonised layer. The refractive index of the thinner PC film has normal dispersion at all ion fluences. At ion fluences of 2 · 1016 ions/cm2, both PC films were found to have the same etching rate as polystyrene. Washing in dichloromethane had no effect on the carbonised layer but affected the underlying material in the case of the thicker PC films leading to a wrinkled structure up to ion fluences of 2 · 1016 ions/cm2. At this and higher fluence, areas of an ordered

  11. Optical properties and oxidation of carbonized and cross-linked structures formed in polycarbonate by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Kosobrodova, E., E-mail: elenak@physics.usyd.edu.au [Department of Applied Plasma and Physics, School of Physics, University of Sydney, NSW 2006 (Australia); Kondyurin, A. [Department of Applied Plasma and Physics, School of Physics, University of Sydney, NSW 2006 (Australia); Chrzanowski, W. [Faculty of Pharmacy, University of Sydney, NSW 2006 (Australia); Department of Nanobiomedical Science and BK21 PLUS NBM Global Research, Center for Regenerative Medicine, Dankook University, Cheonan 330-714 (Korea, Republic of); McCulloch, D.G. [School of Applied Sciences, RMIT University, Melbourne, Victoria 3001 (Australia); McKenzie, D.R.; Bilek, M.M.M. [Department of Applied Plasma and Physics, School of Physics, University of Sydney, NSW 2006 (Australia)

    2014-06-01

    Highlights: • Structure and properties of polycarbonate films spin-coated on silicon are studied. • The films have two thicknesses: thicker and thinner than a depth of ion penetration. • Effect of radio frequency plasma and plasma immersion ion implantation is compared. - Abstract: At ion fluences higher than 5 · 10{sup 15} ions/cm{sup 2}, plasma immersion ion implantation (PIII) of polycarbonate (PC) results in a formation of a carbonized surface layer. The thickness of this layer is close to the depth of ion penetration. A comparison of PIII treated, spin-coated PC films with pre-treatment thicknesses designed to match and exceed the carbonized layer thickness is employed to study the properties of the carbonised layer independently from the less modified underlying structure. At ion fluencies higher than 10{sup 16} ions/cm{sup 2}, the thinner PC film is completely transformed into an amorphous carbon-like material with no traces of the initial PC structure. The thicker films, however, incorporated two layers: a top carbonised layer and a cross-linked layer below. Compared to the two-layered PC film, the completely carbonized layer was found to have a much higher concentration of C=O bonds and much lower concentration of O–H bonds after exposure to atmospheric oxygen. The refractive index of the thicker PC films PIII treated with high ion fluencies is close to the refractive index of diamond-like carbon. Anomalous dispersion of the refractive index of the thicker PC films is observed after formation of the carbonised layer. The refractive index of the thinner PC film has normal dispersion at all ion fluences. At ion fluences of 2 · 10{sup 16} ions/cm{sup 2}, both PC films were found to have the same etching rate as polystyrene. Washing in dichloromethane had no effect on the carbonised layer but affected the underlying material in the case of the thicker PC films leading to a wrinkled structure up to ion fluences of 2 · 10{sup 16} ions/cm{sup 2}. At

  12. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    International Nuclear Information System (INIS)

    The carbon vacancy (VC) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the VC-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (Ci's) and annihilation of VC's in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the VC annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating VC's. Concentrations of VC below ∼2 × 1011 cm−3 can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the VC-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote Ci-clustering and reduce dynamic defect annealing. These Ci-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced Ci injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the VC-concentration, which limit the net effect of the Ci injection, and a competition between the two processes occurs

  13. Ion implantation for combating wear and corrosion

    International Nuclear Information System (INIS)

    Ion implantation provides a means of introducing chosen atomic species into the surface layers of a material or component without the need for heating. Atoms which form strong interatomic bonds, such as nitrogen or carbon, will harden a metal surface and improve wear resistance. Species which impart protection against corrosion, such as nickel, chromium or rare earths can be implanted. Various mechanisms result in a protective layer which far exceeds in thickness the range of implanted ions. Ion implantation is not a coating technique: there is no interface which could form a plane of weakness, nor are there dimensional changes. It is applied to finished components using equipment which will be described. (author)

  14. Fabrication of silicon carbide nanowires/carbon nanotubes heterojunction arrays by high-flux Si ion implantation.

    Science.gov (United States)

    Liu, Huaping; Cheng, Guo-An; Liang, Changlin; Zheng, Ruiting

    2008-06-18

    An array of silicon carbide nanowire (SiCNW)-carbon nanotube (CNT) heterojunctions was fabricated by high-flux Si ion implantation into a multi-walled carbon nanotube (MWCNT) array with a metal vapor vacuum arc (MEVVA) ion source. Under Si irradiation, the top part of a CNT array was gradually transformed into an amorphous nanowire array with increasing Si dose while the bottom part still remained a CNT structure. X-ray photoelectron spectroscopy (XPS) analysis shows that the SiC compound was produced in the nanowire part even at the lower Si dose of 5 × 10(16) ions cm(-2), and the SiC amount increased with increasing the Si dose. Therefore, the fabrication of a SiCNW-CNT heterojunction array with the MEVVA technique has been successfully demonstrated. The corresponding formation mechanism of SiCNWs was proposed. PMID:21825818

  15. Mutagenic effects of ion implantation on stevia

    International Nuclear Information System (INIS)

    Dry seeds of Stevia were implanted by 75 keV nitrogen and carbon ions with various doses. The biological effects in M1 and mutation in M2 were studied. The results showed that ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam dose. The rate of cells with chromosomal aberration was lower than that induced with γ-rays. Frequency of the mutation induced by implantation of N+ and C+ ions were higher than those induced by γ-rays. The rate of cell with chromosome aberration and in M2 useful mutation induced by implantation of C+ ion was higher than those induced by implantation of N+ ion. Mutagenic effects Feng1 x Riyuan and Riyuan x Feng2 by implantation of N+ and C+ were higher than that of Jining and Feng2

  16. Cell growing on ion implanted polytetrafluorethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurina, I., E-mail: i.kondyurina@gmail.com [School of Medicine, University of Sydney, Sydney (Australia); Shardakov, I. [Institute of Continuous Media Mechanics, Russian Academy of Science, Perm (Russian Federation); Nechitailo, G. [Institute of Biochemical Physics, Russian Academy of Science, Moscow (Russian Federation); Terpugov, V. [Perm State University, Perm (Russian Federation); Kondyurin, A. [School of Physics, University of Sydney, Sydney (Australia)

    2014-09-30

    Highlights: • PTFE surface becomes rough, carbonized and oxidized after ion implantation. • Ion implanted PTFE contains chemically active free radicals. • Cells adherence on ion implanted PTFE is improved. - Abstract: Polytetrafluorethylene (PTFE and ePTFE) substrates were treated by ion implantation with nitrogen ions of 20 keV energies and 10{sup 13}–10{sup 16} ions/cm{sup 2} ion fluences. The modification of the polymer surface was analyzed by FTIR and XPS spectroscopy, water wetting angle measurements and AFM images. The surface morphology, wettability and chemical activity were changed due to surface modification. The growing of endothelial cells of modified surfaces was improved in comparison with untreated PTFE and ePTFE substrates. The improved cell adherence on the modified surface is based on the improved adhesion of cell proteins.

  17. Formation of low friction and wear-resistant carbon coatings on tool steel by 75keV, high-dose carbon ion implantation

    International Nuclear Information System (INIS)

    Hardened AISI D2 steel samples were subjected to mass-separated C+ ion bombardment at 75keV with ion doses in the range 0.5-15x1018C+cm-2. It was observed that sputtering was still limited, and the system exhibited internal growth, because most of the ions penetrated more than 0.1μm into the growing carbon film. At the lowest ion doses applied, carbon was implanted into the steel, while higher doses resulted in the implanted carbon concentration near the surface being almost 100%. For the highest doses applied, Rutherford backscattering spectrometry and surface profilometry analyses showed that layers about 0.5-1μm thick of almost pure carbon grew outward from the steel substrate. Transmission electron microscopy showed that the carbon layers were amorphous and exhibited an intermixed layer-substrate interface. The layers were hard and exhibited pronounced elastic recovery when subjected to ultralow load indentation. Low friction and excellent wear properties were measured when tested under dry conditions with a ball-on-disc tribometer. ((orig.))

  18. Optical planar waveguide in sodium-doped calcium barium niobate crystals by carbon ion implantation

    International Nuclear Information System (INIS)

    There is great interest in niobate crystals which belong to the tetragonal tungsten bronze (TTB) families owing to their intriguing properties. As one representative of such crystals, CBN (calcium barium niobate) has attracted rapidly growing attention. Because it has a higher Curie temperature than SBN (strontium barium niobate), possesses outstanding ferroelectric and it possesses optical properties. In addition, doped with sodium, CBN will show a higher Curie temperature than pure CBN. We report on the fabrication and characterization of optical planar waveguide in x-cut sodium-doped calcium barium niobate crystal by using C ion implantation. The guided-mode properties at the wavelength of 633 and 1539 nm are investigated through prism-coupling measurements, respectively. By applying direct end-face coupling arrangement, the near-field optical intensity distribution of waveguide modes is measured at 633 nm. For comparison, the modal profile of the same guided mode is also numerically calculated by the finite difference beam-propagation method via computer software BeamPROP. The transmission spectra of the waveguide before and after ion implantation treatments were investigated also. Our experiment results reveal that the waveguide could propagate light with transverse magnetic polarized direction only and it is assumed that the polarization selectivity of CBN crystal may responsible for this phenomenon

  19. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  20. Ion implantation at elevated temperatures

    International Nuclear Information System (INIS)

    A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail

  1. Preparation of diamond-like carbon films in methane by electron cyclotron resonance microwave plasma source ion implantation

    International Nuclear Information System (INIS)

    Diamond-like carbon (DLC) films were prepared on Si(100) substrates by ion implantation from an electron cyclotron resonance microwave plasma source. During the implantation, 650 W microwave power was used to produce discharge plasma with methane as working gas, and -20 kV voltage pulses were applied to the substrate holder to accelerate ions in the plasma. Confocal Raman spectra confirmed the DLC characteristics of the films. Fourier-transform infrared characterization indicates that the DLC films were composed of sp3 and sp2 carbon-bonded hydrogen. The hardness of the films was evaluated with a Nano Indenter-XP System. The result shows that the highest hardness value was 14.6 GPa. The surface rms roughness of the films was as low as 0.104 nm measured with an atomic force microscope. The friction coefficient of the films was checked using a ball-on-disk microtribometer. The average friction coefficient is approximately 0.122

  2. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    Energy Technology Data Exchange (ETDEWEB)

    Ayedh, H. M.; Svensson, B. G. [University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Hallén, A. [School of Information and Communication Technology (ICT), Royal Institute of Technology, SE-164 40 Kista-Stockholm (Sweden)

    2015-11-07

    The carbon vacancy (V{sub C}) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the V{sub C}-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (C{sub i}'s) and annihilation of V{sub C}'s in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the V{sub C} annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating V{sub C}'s. Concentrations of V{sub C} below ∼2 × 10{sup 11} cm{sup −3} can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the V{sub C}-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote C{sub i}-clustering and reduce dynamic defect annealing. These C{sub i}-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced C{sub i} injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the V{sub C}-concentration, which limit the net effect of the C{sub i} injection, and a competition between the two processes occurs.

  3. Surface modification of steel by high-dose pulse-ion implantation of titanium, tungsten, molybdenum and carbon

    International Nuclear Information System (INIS)

    Ions of Ti, Mo, W, and C, produced by a pulsed metal (MEVVA) ion source were implanted into H13 steel. Energies were from 25-50 keV. Hardness were increased by as much as 40% and wear resistances were improved by factors of 3 to 5 by the implantations. Rutherford backscattering (RBS) measurements demonstrated that implanted Mo can penetrate to depths of 1400 A into steel during the implantation period of 25 min for the fluence of 1x1017/cm2. This depth is greater than the calculated range. The average doping concentration was greater than 15 at.% for the various implants. It was observed by X-ray diffraction and by transmission electron microscopy that intermetallic compounds such as FeTi, Fe2Ti and FeMo were formed. It was concluded that the MEVVA type of ion source shows promise for metal-ion implantations into steel components for industrial application. (orig.)

  4. Ion implantation into concave polymer surface

    International Nuclear Information System (INIS)

    A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows that gas-barrier property enhances due to the modification

  5. Ion implantation into concave polymer surface

    Science.gov (United States)

    Sakudo, N.; Shinohara, T.; Amaya, S.; Endo, H.; Okuji, S.; Ikenaga, N.

    2006-01-01

    A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows that gas-barrier property enhances due to the modification.

  6. Ion implantation: Science and technology

    International Nuclear Information System (INIS)

    This book is a tutorial presentation of the science, techniques, and machines of ion implantation. The first section of this book concerns the science of ion implantation. It covers the historical development of the field, and the basic theory of energetic ion penetration of solids. The major concentration of this section is to explain the nature of the creation of damage in crystaline silicon during ion implantation, and the methods which can be used to recover the original crystalinity. Especially helpful are the TEM photographs scattered throughout this section which show the many phases of the morphology of ion implantation damage. Methods are described which allow the quantitative evaluation of the success of the implantation and the recovery of the semiconductor. The last half of this book describes the ion accelerators (implanters) used in ion implantation, with a detailed presentation of the major components which require maintenance. A large part of this section concerns the methods of quantitatively evaluating the performance of ion implanters. A chapter is devoted to the extensive safety hazards of implanters and methods to maintain safe operation

  7. Effects of H2 gas addition into process and H ion implantation on the microstructure of hydrogenated amorphous carbon films prepared by bipolar-type plasma based ion implantation

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon films are deposited on Si(1 0 0) and SiO2 glass substrates by a bipolar-type plasma based ion implantation system. The films are prepared using toluene gas at a constant flow rate of 2 sccm. The effects of H2 gas addition during deposition on the microstructure of the films are examined by electrical conductivity measurements, Raman spectroscopy, elastic recoil detection analysis (ERDA) and optical spectroscopy. In addition, H implantation is also carried out using H2 plasma discharge. Thickness of the films is approximately 60 nm for all samples. It is found that electrical conductivity slightly increases with increasing additive H2 flow rate. However, the conductivity drastically decreases after H implantation. Raman analysis reveals that H2 gas addition slightly causes the film graphitization, but the H implantation does it amorphization. The results of ERDA show that the H concentration in the films slightly decreases with increasing H2 gas addition, but increases by H implantation. In spite of H2 gas addition, the optical band gap is not changed and kept approximately 0.7 eV. However, H implantation makes it increase up to approximately 1.0 eV

  8. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Science.gov (United States)

    Hershcovitch, A.; Gushenets, V. I.; Seleznev, D. N.; Bugaev, A. S.; Dugin, S.; Oks, E. M.; Kulevoy, T. V.; Alexeyenko, O.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Vizir, A.; Yushkov, G. Yu.

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described.

  9. Molecular ion sources for low energy semiconductor ion implantation (invited)

    International Nuclear Information System (INIS)

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described

  10. Molecular ion sources for low energy semiconductor ion implantation (invited).

    Science.gov (United States)

    Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described. PMID:26932065

  11. The structure investigation of thin silicon layers implanted by carbon ions with energy 40 keV

    International Nuclear Information System (INIS)

    The investigation of crystallization process in thin silicon layers at various conditions of ion implantation and annealing is very important for microelectronics. In this investigation the X-ray diffraction of thin silicon layers implanted by carbon ions with energy of 40 keV were made. A mechanism of both the Si and SiC crystallite formation in silicon layers having a Gaussian distribution of the implanted carbon is discussed. The implantation of 12C+ into silicon was carried out using a modernized accelerator ILU-4 in full oil less condition. To prevention of ion beam heating of samples the ion current density was kept below 4 μA/cm2. The single crystal of (100) oriented silicon of dimensions 7x12x0.4 mm overall with resistivity 4-10 Ωcm as samples were used. Post implantation annealing of samples over the range of 200-1250 deg. C with step 50 or 100 deg. C in argon atmosphere for 30 min was performed. The concentrations of carbon in a peak of Gaussian distribution wereNC/NSi=0.51. An uniform increase of average sizes of Si and β-SiC crystallites over the range 1000-1200 deg. C is observed. The rate of the average size increase of silicon crystallites in this temperature range is greater by one and half fold than the same for silicon carbide. These rates for Si and β-SiC are increased 5-6 times over the range 1200-1270 deg. C and they are equal (Δd/ΔT)Si = 1.27 A/degree and (Δd/ΔT)SiC = 0.59 A/degree, respectively. The rate of the average size increase of silicon crystallites in this temperature range is greater by 2.2 fold than the same for silicon carbide. At 1270 deg. C the increase of silicon carbide crystallites is decelerated, the curve goes to saturation. In spite of the intensive increase of average sizes of Si- and SiC crystallites a dependence of the integral intensity from the temperature shows an insignificant change of the polycrystalline SiC phase volume and a several increase (one and a half times) of the polycrystalline Si over the range

  12. Carbon coatings for medical implants

    Directory of Open Access Journals (Sweden)

    K. Bakowicz-Mitura

    2007-01-01

    Full Text Available Purpose: In this paper we report in vitro and in vivo results of Nanocrystalline Diamond Coatings whichare used in medicine onto medical implants The very important property of carbon coatings is the protectionliving organism against the metalosis. Different medical implants with complicated shapes are covering byNanocrystalline Diamond Coatings by RF dense plasma CVD.Design/methodology/approach: 1 Material characterizations of deposited coatings have been evaluated by using:Transmission Electron Microscopy (TEM, Scanning Electron Microscopy (SEM, Atomic Force Microscopy(AFM, Auger electron spectroscopy (AES, microX-Ray Spectroscopy and bend test 2 Biological investigationbased on: (a in vivo and (b in vitro examinations as well (c clinical investigations – contact allergy.Findings: It was revealed that Nanocrystalline Diamond Coatings form the barrier diffusion between implantand human environment as a consequence prevent leaching of metallic ions into the body. Additionally, theresearch on carbon coatings proved that diamond layers are biocompatible with living organism. Contact allergyon nickel is inhibited by diamond powders.Practical implications: Practical application metal implants with NCD in orthopedy, cardiosurgery, oralsurgery, maxillo-facial surgery and dermatology.Originality/value: We have observed anti-inflammatory, antiallergic and anticancerogenic responses from thecarbon coatings layers onto medical implants like wires and screws.

  13. Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO{sub 2}/Si interface

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan); Arima, Hiroki; Yokoyama, Ai; Saito, Yasunao; Nakata, Jyoji [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

    2012-07-01

    We have studied growth of chirality-controlled carbon nanotubes (CNTs) from hot-implantation-formed catalytic nano-clusters in a thermally grown SiO{sub 2}/Si substrate. This procedure has the advantage of high controllability of the diameter and the number of clusters by optimizing the conditions of the ion implantation. In the present study, Co{sup +} ions with ion dose of 8 Multiplication-Sign 10{sup 16} cm{sup -2} are implanted in the vicinity of the SiO{sub 2}/Si interface at 300 Degree-Sign C temperature. The implanted Co atoms located in the SiO{sub 2} layer has an amorphous-like structure with a cluster diameter of several nm. In contrast, implanted Co atoms in the Si substrate are found to take a cobalt silicide structure, confirmed by the high-resolution image of transmission electron microscope. CNTs are grown by microwave-plasma-enhanced chemical vapor deposition. We have confirmed a large amount of vertically-aligned multi-walled CNTs from the Co nano-clusters formed by the hot-ion-implantation near the SiO{sub 2}/Si interface.

  14. High dose metal ion implantation

    International Nuclear Information System (INIS)

    To affect non-electronic surface properties (wear, corrosion and so on) the implanted material must reach measureable atom percentages, on the order of 10%, requiring ion implantation does in the range of 1017/cm2. For this reason, the MEVVA metallic ion source, developed at Lawrence Berkeley Laboratory, has been modified to provide metal ions for high dose metal ion implantation. The modifications inlcude increasing the arc efficiency, increasing beam spot size, and increasing beam divergence. The extracted beams have been characterized as to beam cross section and the depth profiles of implants. Time-average beam currents in excess of 20 mA have been extracted. Beams of titanium, tantalum, and other refractory metal ions, plus other refractory materials, such as titanium carbide, have been extracted and used to produce modifications in the surface properties of materials. (orig.)

  15. Application of ion implantation in stevia breeding

    International Nuclear Information System (INIS)

    Dry seed of stevia were implanted with 60-100 keV nitrogen ion and 75 keV carbon ion of various doses, and the effects of the composition and yield of stevioside were studied. The results showed that ion beam could induce variation in total stevioside yield and the composition of the plant. The best treatment was 75 keV nitrogen ion with 5 x 1014 N+/cm2, the stevioside yield and Rebaudioside A (R-A) content were increased by 4.74% and 14.08% respectively. The effects induced by implantation of carbon ion were higher than those induced by implantation of nitrogen ion. Effects of Feng1 x Ri Yuan and Ri Yuan x Feng2 are higher than those of Ji Ning and Feng2. Seven mutation lines were selected from the mutation progenies. The stevioside composition of these lines were previously improved. The results suggest a potential application of ion implantation in stevia breeding

  16. Surface analysis of antithrombogenic ion-implanted silicone rubber

    International Nuclear Information System (INIS)

    The chemical and physical structure of ion-implanted silicone rubbers has been studied with regard to blood compatibility such as the reduction of platelet accumulation owing to ion implantation. In particular, the accumulation ratio of platelets in the superior vena cava revealed that O2+ (1x1017 ions/cm2) implantation was most effective in reducing platelet accumulation. H2+, He+, C+, O+, O2+, N+, N2+, Ne+, Na+, Ar+, K+, and Kr+ ion implantations were performed at an energy of 150 keV with fluences between 1x1017 and 2x1017 ions/cm2 at room temperature. Results of FT-IR-ATR showed that ion implantation broke the original chemical bond to form new radicals such as OH, ....C=O, SiH, and CH2. The formation of these radicals depended on the ion species employed: ....C=O formation by O+ or O2+ implantation and formation of amines by N+ or N2+ implantation. The results of Raman spectroscopy showed that ion implantation always produced a peak at near 1500 cm-1, although the intensity of this peak was dependent on the ion species. The light ions like H2+ and He+ were more effective than heavy ions in producing this peak, and O2+ implantation was the most effective at producing amorphous carbon. These results indicated that ....C=O and amorphous carbon, generated by O2+ implantation, may improve the antithrombogenicity. (orig.)

  17. Mechanical properties of amorphous hydrogenated carbon films fabricated on polyethylene terephthalate foils by plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Amorphous hydrogenated carbon (a-C:H) films have been deposited on polyethylene terephthalate by plasma immersion ion implantation and deposition. The influence of deposition parameters such as gas pressure, bias voltage, and nitrogen incorporation on the mechanical properties of the a-C:H films are investigated. X-ray photoelectron spectroscopy reveals that the ratio of sp3 to sp2 is 0.24 indicating that the film is mainly composed of graphitelike carbon. Nanoindentation tests disclose enhanced surface hardness of ∼6 GPa. The friction coefficient of the film deposited at higher gas pressure, for instance, 2.0 Pa, is lower than that of the film deposited at a lower pressure such as 0.5 Pa. The films deposited using a low bias voltage tend to fail easily in the friction tests and nitrogen incorporation into the a-C:H films decreases the friction coefficient. Mechanical folding tests show that deformation failure is worse on a thinner a-C:H film

  18. Graphitic structure formation in ion implanted polyetheretherketone

    Energy Technology Data Exchange (ETDEWEB)

    Tavenner, E., E-mail: tazman1492@gmail.com [Creative Polymers Pty. Ltd., 41 Wilkinson Street, Toowoomba, Queensland 4350 (Australia); Chemical Committee, Surface Chemical Analysis, Standards (Australia); Wood, B. [Centre for Microscopy and Microanalysis, University of Queensland, St. Lucia, Queensland 4072 (Australia); Chemical Committee, Surface Chemical Analysis, Standards (Australia); Curry, M.; Jankovic, A.; Patel, R. [Center for Applied Science and Engineering, Missouri State University, 524 North Boonville Avenue, Springfield, MO 65806 (United States)

    2013-10-15

    Ion implantation is a technique that is used to change the electrical, optical, hardness and biocompatibility of a wide range of inorganic materials. This technique also imparts similar changes to organic or polymer based materials. With polymers, ion implantation can produce a carbon enriched volume. Knowledge as to the nature of this enrichment and its relative concentration is necessary to produce accurate models of the physical properties of the modified material. One technique that can achieve this is X-ray photoelectron spectroscopy. In this study the formation of graphite like structures in the near surface of polyetheretherketone by ion implantation has been elucidated from detailed analysis of the C 1s and valence band peak structures generated by X-ray photoelectron spectroscopy. Further evidence is given by both Rutherford backscatter spectroscopy and elastic recoil detection.

  19. Passivation of carbon steel through mercury implantation

    Science.gov (United States)

    Wilbur, P. J.; Robinson, R. S.

    1981-01-01

    An experiment, in which carbon steel samples were implanted with mercury ions from a broad beam ion source and their corrosion characteristics in air were evaluated, is described. Mercury doses of a few mA min/square cm at energies of a few hundred electron volts are shown to effect significant improvements in the corrosion resistance of the treated surfaces. In a warm moist environment the onset of rusting was extended from 15 min. for an untreated sample to approximately 30 hrs. for one implanted at a dose of 33 mA min/square cm with 1000 eV mercury ions.

  20. Microstructural characterisation of carbon implanted austenitic stainless steel

    International Nuclear Information System (INIS)

    Low carbon (316L) austenitic stainless steel has been implanted with carbon ions with a fluence of 5 x 1017 C ions/cm2 using an ion energy of 75 keV. The effect of carbon ion implantation on the microstructure of the austenitic steel has been examined in cross-section using transmission electron microscopy (TEM) both before and after implantation, and the implantation data correlated with a computer based simulation, TRIM (Transport and Range of Ions in Matter). It has been found that the high-fluence carbon ion implantation modified the microstructure of the steel, as demonstrated by the presence of two amorphous layers separated by a layer of expanded austenite

  1. Microstructural characterisation of carbon implanted austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, M.E. [Scientific Affairs Research Group, Stryker Orthopaedics, Raheen Business Park, Limerick (Ireland)]. E-mail: matthew.murphy@stryker.com; Insley, G.M. [Scientific Affairs Research Group, Stryker Orthopaedics, Raheen Business Park, Limerick (Ireland); Laugier, M.T. [Department of Physics, University of Limerick, Limerick (Ireland); Newcomb, S.B. [Sonsam Ltd., Glebe Laboratories, Newport, Tipperary (Ireland)

    2005-06-01

    Low carbon (316L) austenitic stainless steel has been implanted with carbon ions with a fluence of 5 x 10{sup 17} C ions/cm{sup 2} using an ion energy of 75 keV. The effect of carbon ion implantation on the microstructure of the austenitic steel has been examined in cross-section using transmission electron microscopy (TEM) both before and after implantation, and the implantation data correlated with a computer based simulation, TRIM (Transport and Range of Ions in Matter). It has been found that the high-fluence carbon ion implantation modified the microstructure of the steel, as demonstrated by the presence of two amorphous layers separated by a layer of expanded austenite.

  2. Mutation breeding by ion implantation

    Science.gov (United States)

    Yu, Zengliang; Deng, Jianguo; He, Jianjun; Huo, Yuping; Wu, Yuejin; Wang, Xuedong; Lui, Guifu

    1991-07-01

    Ion implantation as a new mutagenic method has been used in the rice breeding program since 1986, and for mutation breeding of other crops later. It has been shown, in principle and in practice, that this method has many outstanding advantages: lower damage rate; higher mutation rate and wider mutational spectrum. Many new lines of rice with higher yield rate; broader disease resistance; shorter growing period but higher quality have been bred from ion beam induced mutants. Some of these lines have been utilized for the intersubspecies hybridization. Several new lines of cotton, wheat and other crops are now in breeding. Some biophysical effects of ion implantation for crop seeds have been studied.

  3. Physical and Tribological Characteristics of Ion-Implanted Diamond Films

    Science.gov (United States)

    Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

    1994-01-01

    Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

  4. Changes in friction characteristics and microstructure of steel by ion implantation of titanium and additional carbon in various doses. Pt. 1

    International Nuclear Information System (INIS)

    Changes in the macroscopic tribology of Ti+Ci ion-implanted steel depending on the supplemental carbon dose were studied. Titanium ions were implanted at 5 x1017 ions cm-2 followed by carbon ions at 0, 1 x1016, 4 x1016, 1 x1017 and 4 x1017 ions cm-2, into quenched and tempered steel. The coefficient of friction and amount of wear were evaluated through a reciprocating ball-on-disc wear test, at weight loads of 0.98 N, 1.96 N, 4.9 N and 9.8 N. The maximum weight load to accomplish the reduced friction coefficient increased with increase in the dose of supplemental carbon. Scanning electron microscopy observation of the wear tracks revealed that a decrease in wear was achieved when the coefficient of friction was kept at 0.2 - 0.3, and the morphology of the wear tracks appeared to be ploughing. The maximum depth of the wear tracks was kept below 0.1 μm when the type of wear was ploughing. (orig.)

  5. Optical effects of ion implantation

    International Nuclear Information System (INIS)

    This book, the thirteenth in the series ''Cambridge Studies in Modern Optics,'' represents the first attempt to provide a detailed description of the factors and processes that govern the optical properties of ion implanted materials. It begins with a survey of the basic physics and practical methods involved, then goes on to discuss the topics of optical absorption and luminescence. The authors present the basic theory of optical waveguides and their analysis and examine how ion implantation can be used in the production of optical waveguides. The concluding chapter deals with the progress being made in the development of device-oriented waveguide structures and how ion implantation is being used to achieve these ends

  6. Preparation of targets by ion implantation

    International Nuclear Information System (INIS)

    Various factors are described which are involved in target preparation by direct ion implantation and the limitations and pitfalls of the method are emphasized. Examples are given of experiments for which ion implanted targets are well suited. (author)

  7. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gushenets, V. I.; Bugaev, A. S.; Oks, E. M.; Vizir, A.; Yushkov, G. Yu. [High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Seleznev, D. N.; Kulevoy, T. V.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S. [Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Dugin, S.; Alexeyenko, O. [State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow (Russian Federation)

    2016-02-15

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C{sub 4}H{sub 12}B{sub 10}O{sub 4}) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH{sub 3} = P{sub 4} + 6H{sub 2}; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P{sub 4}{sup +} ion beams were extracted. Results from devices and some additional concepts are described.

  8. X-ray photoelectron study of Si+ ion implanted polymers

    International Nuclear Information System (INIS)

    X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si+ ions (E=30 keV, D= 1.1017 cm-2). Two kinds of polymers were studied - ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si+ ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements - Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.

  9. Current trends in ion implantation

    International Nuclear Information System (INIS)

    As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these challenges, namely the need for tighter control of implant uniformity and dose. Additionally, some vacancy-mediated processes are described with the implication that these may provide areas in which positron annihilation spectroscopy could make a significant contribution. (orig.)

  10. Modification of mechanical properties through ion implantation

    International Nuclear Information System (INIS)

    Fatigue, internal friction, and cavitation-erosion properties of plain steel, containing 0.18 wt.% carbon (AISI 1018), have been modified by implantation with nitrogen molecules of 150 KeV energy. It is suggested that these phenomena are related to the interactions of the implant with dislocations. Specifically, room temperature, high-cycle fatigue-lifetime can be significantly extended when the implanted specimens are aged for times sufficiently long to enable interstitial migration to and association with near-surface dislocations. Acoustically-induced cavitation-erosion behavior in distilled water at ambient temperature is also found to be improved by implantation. The role played by interstitial-dislocation association in improving these properties is examined with ultra-high sensitive internal friction and with scanning and transmission electron microscopy. Such experiments are aiding in an elucidation of the fate of the implanted nitrogen in body-centered cubic steels. These preliminary results indicate the potential applications of ion implantation for the improvement of surface-related mechanical properties. (author)

  11. The surface modification of diamond by ion implantation

    International Nuclear Information System (INIS)

    The surface modification of diamonds by ion implantation was studied by using Ar+, N2+, Zn+ and Cr+ ions. The surface layer of diamonds becomes conductive by ion implantation. The effect of ions implanted and the variation of crystal structure near surface were investigated. The ion implantation changes the color of the surface of diamonds to dark black and makes the surface layer amorphous. The distribution of implantet atoms in the surface layer was in good agreement with that estimated by the LSS theory, and the thickness of the amorphous layer was about 1.8 times of the depth of the maximum concentration. From this fact, the thickness of amorphous layer can be estimated from the LSS theory. The electric resistivity of the surface layer of diamonds decreased by the implantation of ions, and becomes a saturated value for the amount of implantation of 1 x 1016 ions/cm2. The saturated sheet resistivity was in inverse proportion to the thickness of amorphous layer. It was found that the resistivity of the produced amorphous layer was similar to that of the ordinary glassy carbon. The implanted metallic ions contributed to the electric conductivity of the matrix. The electro-chemical properties of ion-implanted diamonds were also studied. (Kato, T.)

  12. Structure and tribological properties of modified layer on 2024 aluminum alloy by plasma-based ion implantation with nitrogen/titanium/carbon

    Institute of Scientific and Technical Information of China (English)

    张玲召; 廖家轩; 夏立芳; 刘维民; 徐洮; 薛群基

    2003-01-01

    2024 aluminum alloy was implanted with nitrogen then titanium finally carbon by plasma-based ion implantatio to form a gradient layer.The structure and tribological properties of the layer were investigated.Its composition profiles and chemical states were analyzed with X-ray photoelectron spectroscopy(XPS).The surface carbonlayer was analyzed by Raman spectrum.The appearances were observed by atomic force microscope(AFM).Thesurface hardness was measured with the mechanical property microprobe.The dry wear tests against GCr15 steelball at various sliding loads were performed with a ball-on-disk wear tester in ambient environment.The resultsshow that the thickness of the modified layer is 1 200 nm,the carbon layer is a smooth and compact diamond-likecarbon(DLC)films,and the carbon-titanium interface is broadened due to carbon ions implantation,resulting in agood composition and structure transition between DLC films and titanium layer.Surface hardness is improvedmarkedly,with a slow and uniform change.Tribological properties are improved greatly although they reduce withthe increase of sliding loads because the modified layer becomes thin rapidly.

  13. Carbon Fiber Biocompatibility for Implants

    Science.gov (United States)

    Petersen, Richard

    2016-01-01

    Carbon fibers have multiple potential advantages in developing high-strength biomaterials with a density close to bone for better stress transfer and electrical properties that enhance tissue formation. As a breakthrough example in biomaterials, a 1.5 mm diameter bisphenol-epoxy/carbon-fiber-reinforced composite rod was compared for two weeks in a rat tibia model with a similar 1.5 mm diameter titanium-6-4 alloy screw manufactured to retain bone implants. Results showed that carbon-fiber-reinforced composite stimulated osseointegration inside the tibia bone marrow measured as percent bone area (PBA) to a great extent when compared to the titanium-6-4 alloy at statistically significant levels. PBA increased significantly with the carbon-fiber composite over the titanium-6-4 alloy for distances from the implant surfaces of 0.1 mm at 77.7% vs. 19.3% (p enhanced implant osseointegration. Carbon fibers acting as polymer coated electrically conducting micro-biocircuits appear to provide a biocompatible semi-antioxidant property to remove damaging electron free radicals from the surrounding implant surface. Further, carbon fibers by removing excess electrons produced from the cellular mitochondrial electron transport chain during periods of hypoxia perhaps stimulate bone cell recruitment by free-radical chemotactic influences. In addition, well-studied bioorganic cell actin carbon fiber growth would appear to interface in close contact with the carbon-fiber-reinforced composite implant. Resulting subsequent actin carbon fiber/implant carbon fiber contacts then could help in discharging the electron biological overloads through electrochemical gradients to lower negative charges and lower concentration. PMID:26966555

  14. Ion implantation and bio-compatibility

    International Nuclear Information System (INIS)

    Surface modification of polymers by ion implantation has been carried out to control surface properties such as conductivity, wettability, blood and tissue compatibility. Ion implantation into silicone rubber, polystyrene and segmented polyurethane was performed at 150 keV with doses ranging from 1 x 1015 to 3 x 1017 ions/cm2 to improve bio-compatibility. The platelet accumulation on ion implanted silicone rubber decreased and non-thrombogenicity of ion implanted specimens were improved. The ion implanted polystyrene and segmented polyurethane have been found to exhibit remarkably higher adhesion and spreading of endothelial cells compared to the non-implanted case. It is concluded that ion implantation into polymers is effective in controlling their bio-compatibility. (author)

  15. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 12000C and boron up to 9500C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 10500C. (U.K.)

  16. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hatada, R., E-mail: hatada@ca.tu-darmstadt.de [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Baba, K. [Industrial Technology Center of Nagasaki, Applied Technology Division, Omura, Nagasaki 856-0026 (Japan); Sawase, T.; Watamoto, T. [Nagasaki University, Department of Applied Prosthodontics, Nagasaki 852-8523 (Japan); Matsutani, T. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Kinki University, Department of Electric and Electronic Engineering, Higashi-osaka 577-2332 (Japan)

    2014-08-15

    Highlights: • Deposition of Ag-containing diamond-like carbon films inside of tubes. • Combination of plasma source ion implantation and DC sputtering. • Antibacterial effect against S. aureus bacteria. - Abstract: Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C{sub 2}H{sub 4} plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C{sub 2}H{sub 4} was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  17. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    International Nuclear Information System (INIS)

    Highlights: • Deposition of Ag-containing diamond-like carbon films inside of tubes. • Combination of plasma source ion implantation and DC sputtering. • Antibacterial effect against S. aureus bacteria. - Abstract: Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria

  18. Computation of ion implantation uniformity

    International Nuclear Information System (INIS)

    Commercial ion implanters employ a variety of different systems to scan the ion beam over the target. In many of the target scanning systems employed the achievable uniformity of dose has been limited by the chosen geometry. This paper describes a computer program which has been used to calculate the dose uniformity of a number of these systems. The results are presented as iso-dose lines relative to the dose at the centre of the target. The non-uniformities are then directly apparent and the parameters controlling their magnitude can be readily considered by equipment designers, purchasers or users. (author)

  19. In-situ deposition of sacrificial layers during ion implantation

    International Nuclear Information System (INIS)

    The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase

  20. Carbon coatings for medical implants

    OpenAIRE

    K. Bakowicz-Mitura; P. Couvrat; I. Kotela; P. Louda; D. Batory; J. Grabarczyk

    2007-01-01

    Purpose: In this paper we report in vitro and in vivo results of Nanocrystalline Diamond Coatings whichare used in medicine onto medical implants The very important property of carbon coatings is the protectionliving organism against the metalosis. Different medical implants with complicated shapes are covering byNanocrystalline Diamond Coatings by RF dense plasma CVD.Design/methodology/approach: 1) Material characterizations of deposited coatings have been evaluated by using:Transmission Ele...

  1. Mutagenic Mechanisms of Ion Implantation in Plants

    International Nuclear Information System (INIS)

    Ion beam implantation, as a new mutation technique, has been widely used in mutation breeding, and great achievements have been made for both the agriculture and fermentation industry. The mechanism underlying ion beam-induced mutagenesis has been a topic of research in recent years. In this paper, we focus on the initial physical process of ion implantation into organisms, noting that energy deposit, mass deposit and charge transfer of the implanted ions into target organisms are the main contributors to the biological effects. Recent studies of remote damage following ion beam implantation in plant samples are also included. It was observed that targeted ion implantation of the shoot apical meristem (SAM) of Arabidopsis embryos induces damage to the root apical meristem (RAM), indicating long distance systemic effects in intact organisms. Further studies showed that the generation of reactive oxygen species upon ion implantation could play important roles in the observed systemic effects. (author)

  2. Microstructure of metal Ion implanted ceramics

    International Nuclear Information System (INIS)

    Microstructure of alumina and silicon nitride after metal ion implantation has been studied. A metal vapour vacuum arc (MEVVA) ion source was employed to implant Ti ions into alumina with 7.6x1016 and 3.1x1017 ions/cm2 at 40 keV. Ti ions were also implanted into silicon nitride at a dose of 4x1017 ions/cm2 at 70 keV. The characterisation of ion implanted ceramics by Rutherford Backscattering Spectrometry (RBS) and cross-sectional transmission electron microscopy (XTEM) showed low dose Ti implantation into alumina resulted in a highly defective surface layer. At higher dose, TiO2 precipitates in an amorphous matrix were detected. In contrast, Ti implantation into silicon nitride produced a layered structure. The upper most layer consisted of extremely fine TiN particles in an amorphous matrix. Underneath this layer, an amorphous layer was formed. (authors)

  3. Reflectivity modification of polymethylmethacrylate by silicon ion implantation

    International Nuclear Information System (INIS)

    The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si+ beam at fluences in the range from 1013 to 1017 cm-2 was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si+-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated

  4. Mutagenic effects of ion implanted rice seed

    International Nuclear Information System (INIS)

    Dry seeds of rice were implanted with 15∼30 keV N+, H+, Ar+ ion beam of various doses. The biological effects in M1 and mutation in M2 were studied. The results showed that ion beam could induce the variation on the chromosome structure and inhibit mitosis in root tip cell. The chromosomal aberration rate of cells tended to be increased with increase of implanted ion dose. Compared with 60Co γ-rays, ion implantation induced lower rate of cells with chromosome aberration. However, there was a similar inhibitory effect on mitosis between ion beam and γ-rays. The electrophoretic banding patterns of peroxidase enzymes were altered by both mutagens and varied. Frequency of the chlorophyll mutation implanted by ion beam was higher than that induced by γ-rays. Mutation frequencies of heading date and plant height were similar between ion beam implanting and γ-rays irradiation. (11 tabs., 2 figs.)

  5. Multi-energy ion implantation from high-intensity laser

    Directory of Open Access Journals (Sweden)

    Cutroneo Mariapompea

    2016-06-01

    Full Text Available The laser-matter interaction using nominal laser intensity above 1015 W/cm2 generates in vacuum non-equilibrium plasmas accelerating ions at energies from tens keV up to hundreds MeV. From thin targets, using the TNSA regime, plasma is generated in the forward direction accelerating ions above 1 MeV per charge state and inducing high-ionization states. Generally, the ion energies follow a Boltzmann-like distribution characterized by a cutoff at high energy and by a Coulomb-shift towards high energy increasing the ion charge state. The accelerated ions are emitted with the high directivity, depending on the ion charge state and ion mass, along the normal to the target surface. The ion fluencies depend on the ablated mass by laser, indeed it is low for thin targets. Ions accelerated from plasma can be implanted on different substrates such as Si crystals, glassy-carbon and polymers at different fluences. The ion dose increment of implanted substrates is obtainable with repetitive laser shots and with repetitive plasma emissions. Ion beam analytical methods (IBA, such as Rutherford backscattering spectroscopy (RBS, elastic recoil detection analysis (ERDA and proton-induced X-ray emission (PIXE can be employed to analyse the implanted species in the substrates. Such analyses represent ‘off-line’ methods to extrapolate and to character the plasma ion stream emission as well as to investigate the chemical and physical modifications of the implanted surface. The multi-energy and species ion implantation from plasma, at high fluency, changes the physical and chemical properties of the implanted substrates, in fact, many parameters, such as morphology, hardness, optical and mechanical properties, wetting ability and nanostructure generation may be modified through the thermal-assisted implantation by multi-energy ions from laser-generated plasma.

  6. Mutagenic mechanism on ion implantation of plants

    International Nuclear Information System (INIS)

    Ion beam implantation, as a new mutation technique, has been widely used in mutation breeding, and great achievements have been attained in agriculture and fermentation industry. The mechanism underlying ion beam induced mutagenic effects has been the topic of research in recent years. In this paper, we focus on the initial physical process of ion implantation into organisms, discussing that energy deposit, mass deposit and charge transfer of the implanted ions into target organisms are the main contributions to the bio-effects. Recent advances in the study of transferring of damaging signals in plant sample are also included. It has been observed that targeted ion implantation of shoot apical meristem (SAM) of Arabidopsis embryos induces damage of root apical meristem (RAM), indicating a long distant bystander effect in intact organism. Further studies showed that generation of reactive oxygen species upon ion implantation and auxin-dependent transcription processes could play important roles in the observed bystander effect. (author)

  7. Changes in friction characteristics and microstructure of steel by ion implantation of titanium and additional carbon in various doses (II)

    International Nuclear Information System (INIS)

    It is well known that Ti and Ti+C implantation improves the tribological properties of steels. The surface implanted with Ti+C exhibits superior performance in comparison with that implanted with Ti only. In this study, the difference in the microstructure and friction properties between Ti-implanted and Ti+C-implanted steel is investigated through transmission electron microscopy (TEM). After the implantation of Ti to a dose of 5x1017ionscm-2, the steel surface transformed to the amorphous phase only. On the contrary, the surface implanted with 5x1017 Ticm-2 followed by C implantation to a dose of 4x1017ionscm-2 transformed to the amorphous phase embedded with very fine TiC precipitates. After the dry sliding tests, wear tracks were studied by TEM. In Ti-implanted specimens, local damage via the loss of the amorphous layer and oxidation were observed in the wear track. On the contrary, in Ti+C-implanted specimens, uniform wear with very fine stripes was observed. This difference in the wear mode between Ti-implanted specimens and Ti+C-implanted specimens is interpreted in terms of the strength of the implanted layer and the chemical stability of the amorphous phase made by the additional C implantation. ((orig.))

  8. Stoichiometric disturbances in ion implanted silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Morvan, E.; Monserrat, J.; Rebollo, J.; Flores, D.; Jorda, X. [Centro Nacional de Microelectronica, Barcelona (Spain); Locatelli, M.L.; Ottaviani, L. [CEGELY ECPA, INSA de Lyon, Villeurbanne (France)

    1998-08-01

    Monte Carlo simulations of stoichiometric disturbances induced by ion implantation into 6H-SiC single crystal are presented. By following the recoils trajectories during the implantation simulation it is possible to construct C and Si related point defects distributions, which in turns give the post implantation stoichiometry of the SiC crystal. The results show net concentrations of ``stable`` point defects and stoichiometric disturbances of the order of the chemical concentration of the implanted impurity. This phenomenon could play an important role during subsequent annealing steps. Some practical examples of ion implantation are simulated and discussed. (orig.) 4 refs.

  9. Carbon Fiber Biocompatibility for Implants

    OpenAIRE

    Richard Petersen

    2016-01-01

    Carbon fibers have multiple potential advantages in developing high-strength biomaterials with a density close to bone for better stress transfer and electrical properties that enhance tissue formation. As a breakthrough example in biomaterials, a 1.5 mm diameter bisphenol-epoxy/carbon-fiber-reinforced composite rod was compared for two weeks in a rat tibia model with a similar 1.5 mm diameter titanium-6-4 alloy screw manufactured to retain bone implants. Results showed that carbon-fiber-rein...

  10. Waveguide formation by ion implantation in Er doped optical materials

    International Nuclear Information System (INIS)

    High energy medium-light ion implantation was applied on both z-cut Er:LiNbO3 and Er3+-Yb3+ co-doped phosphate glasses, in order to fabricate optical waveguides on optically amplifying media. Preliminary results obtained with Er:LiNbO3, implanted with 3.9 MeV Carbon ions, have demonstrated the possibility to fabricate good quality waveguides, the optical characteristics of which depend on implantation fluence and post-annealing process. Er3+-Yb3+ co-doped phosphate glass substrates were implanted with both 2.8 MeV Carbon ions, at fluences ranging from 3 x 1014 ions/cm2 to 1 x 1015 ions/cm2, and with 3.4 MeV Oxygen ions at a fluence of 1 x 1015 ions/cm2. Also in this case, planar optical waveguides were formed, but, under the as-reported implantation conditions, the possibility to tailor the refractive index profiles was very reduced. In this work, the optical properties of the integrated optical waveguides obtained on different doped substrates are examined

  11. Paramagnetic defects in multistage ion-implanted polyamide films

    International Nuclear Information System (INIS)

    The growing interest in the recent years in the ion implantation of polymer materials is due to the possibility of its using as a new materials for functional electronic and optic elements fabrication. The last investigations show that the ion implantation to polymer films allows to form a buried conductive layers and opens up the possibility for transistor-like devices creation. Therefore the necessity to estimate the correlation between the polymer structure transformation and optimal implantation regimes exist. Thin (40-50 μm) two-layer polymer films consisted of polyethylene and polyamide-6 are investigated. Implantation with boron ions to doses of 3*1016 cm-2 carried out into polyamide layer in multistage regimes with energies of 60, 80 and 100 keV. For first group of samples energies are increased from 60 to 100 keV for each subsequent stage. For second one - energies are decreased from stage to stage. The thick of radiation-damaged layer are estimated from TRIM-code calculation and experimental results on the boron ions ranges and amount of 500 nm for energy of 100 keV, 430 nm for 80 keV and 350 nm for 60 keV. It was found that the multistage implantation performed under conditions where the implantation energy increases from step to step results in the decrease of the paramagnetic centres concentration in the implanted layer and narrowing of the ESR linewidth. It can be inferred that under these implantation conditions the lattice-order of the polymer layer which ions pass repeatedly occurs. This restructurization being accompanied with the compensation of the terminated carbon bonds and strong exchange interaction between π-electrons in the implanted polymer. By contrast, the decrease in the ion energy during the implantation leads to the progressive accumulation of the paramagnetic centres in the implanted layers, i.e. the radicals produced in the earlier implantation steps do not exhibit serious degradation during the subsequent implantation. The

  12. Ion implantation in semiconductors and other materials

    International Nuclear Information System (INIS)

    The evolution of ion implantation techniques in the field of semiconductors and its extension to various fields such as metallurgy, mechanics, superconductivity and opto-electronics are considered. As for semiconductors ion implantation is evoked as: a means of predeposition of impurities at low doping level (1011 to 1014cm-2); a means for obtaining profiles of controlled concentration; a means of reaching high doping levels with using 'strong current' implantation machines of the second generation. Some results obtained are presented

  13. Development of industrial ion implantation technology

    International Nuclear Information System (INIS)

    On a cooperation between KAERI, Kurchatov Institute (Russia), and Mirae Co., development of a metal ion implanter and ion implantation technology is performed on a basic idea of popularization and refinement of ion implantation technology applied to the industrial components. The developed implanter is a two beam type: the mass separation line produces several mA of metal ion beams and the non-separation line produces several tens of mA gas ion beams, thus making the synergistic effect possible by the irradiation of beams from both lines. The target is made of a rotating plate of 60cm in radius and can treat various types of industrial components or parts. About 60 kinds of specimens were treated for the development of implantation technology. Two or five times lengthening of longevities were achieved on the PCB drills, razor blades, cutters, and precision dies. (Author)

  14. Single atom devices by ion implantation

    International Nuclear Information System (INIS)

    To expand the capabilities of semiconductor devices for new functions exploiting the quantum states of single donors or other impurity atoms requires a deterministic fabrication method. Ion implantation is a standard tool of the semiconductor industry and we have developed pathways to deterministic ion implantation to address this challenge. Although ion straggling limits the precision with which atoms can be positioned, for single atom devices it is possible to use post-implantation techniques to locate favourably placed atoms in devices for control and readout. However, large-scale devices will require improved precision. We examine here how the method of ion beam induced charge, already demonstrated for the deterministic ion implantation of 14 keV P donor atoms in silicon, can be used to implant a non-Poisson distribution of ions in silicon. Further, we demonstrate the method can be developed to higher precision by the incorporation of new deterministic ion implantation strategies that employ on-chip detectors with internal charge gain. In a silicon device we show a pulse height spectrum for 14 keV P ion impact that shows an internal gain of 3 that has the potential of allowing deterministic implantation of sub-14 keV P ions with reduced straggling. (paper)

  15. Engineering single photon emitters by ion implantation in diamond

    OpenAIRE

    Naydenov, B.; Kolesov, R.; Batalov, A.; Meijer, J; Pezzagna, S.; Rogalla, D.; Jelezko, F.; Wrachtrup, J.

    2009-01-01

    Diamond provides unique technological platform for quantum technologies including quantum computing and communication. Controlled fabrication of optically active defects is a key element for such quantum toolkit. Here we report the production of single color centers emitting in the blue spectral region by high energy implantation of carbon ions. We demonstrate that single implanted defects show sub-poissonian statistics of the emitted photons and can be explored as single photon source in qua...

  16. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 1013/cm2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  17. Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

    International Nuclear Information System (INIS)

    Highlights: • Characteristics of nitrogen implantation of nanodiamond using two low ion energy ion implantation methods were compared. • Formation of complex nitrogen-related defect centers was promoted by subsequent helium implantation and heat treatments. • Depth profiles of the implanted ions and the generated vacancies were determined using SRIM calculations. • The presence of nitrogen impurity was demonstrated by Fourier-transform infrared spectroscopic measurements. • A new nitrogen related band was detected in the photoluminescence spectrum of the implanted samples that was attributed to the N3 color center in nanodiamond. - Abstract: Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation

  18. Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

    Energy Technology Data Exchange (ETDEWEB)

    Himics, L., E-mail: himics.laszlo@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Center for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Tóth, S.; Veres, M. [Institute for Solid State Physics and Optics, Wigner Research Center for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Tóth, A. [Institute of Materials and Environmental Chemistry, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 17, H-1525 Budapest (Hungary); Koós, M. [Institute for Solid State Physics and Optics, Wigner Research Center for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary)

    2015-02-15

    Highlights: • Characteristics of nitrogen implantation of nanodiamond using two low ion energy ion implantation methods were compared. • Formation of complex nitrogen-related defect centers was promoted by subsequent helium implantation and heat treatments. • Depth profiles of the implanted ions and the generated vacancies were determined using SRIM calculations. • The presence of nitrogen impurity was demonstrated by Fourier-transform infrared spectroscopic measurements. • A new nitrogen related band was detected in the photoluminescence spectrum of the implanted samples that was attributed to the N3 color center in nanodiamond. - Abstract: Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp{sup 2} carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.

  19. Dislocation climb in copper after ion implantation

    International Nuclear Information System (INIS)

    At present, ion implantation is used widely for the modification of subsurface layers of metallic materials to improve the service characteristics of machine components and tools. The aim of this work was the experimental examination of the 'long-range effect' in coarse-grain copper in high-dose ion implantation. In this method, special attention is given to the preparation of specimens both for the case and for the examination by the method of electron microscopy and also to the ion implantation conditions

  20. Aligned ion implantation using scanning probes

    OpenAIRE

    Persaud, Arun

    2007-01-01

    A new technique for precision ion implantation has been developed. A scanning probe has been equipped with a small aperture and incorporated into an ion beamline, so that ions can be implanted through the aperture into a sample. By using a scanning probe the target can be imaged in a non-destructive way prior to implantation and the probe together with the aperture can be placed at the desired location with nanometer precision. In this work first results of a scanning probe integrated into an...

  1. Laws of phase formation in ion-implanted metals

    International Nuclear Information System (INIS)

    Full text: Main laws of ordered structures formation at molybdenum implantation by elements forming phases of introduction (B, C, N, 0, Si, P, S) are discovered in this work. According to them the character of structural and phase transformations in molybdenum at ion implantation is determined not by kinetic parameters of bombarding particles and their chemical activity but by size factor ηx/Me (ratio of nuclear radii of introduced elements and atoms of a matrix). At change of its meaning in the certain limits the following can be observed: superstructures formation (ηx/Mox/Mox/Mo>0.69). In the latter case at the further implantation doze increasing recrystallization of molybdenum monocrystalline layers amorphized during previous bombarding with chemical connection formation takes place, characterized by us as ion-inducted synthesis. The phenomenon discovered on the samples implanted by phosphorus ions. As the result, the high-temperature phase of molybdenum monophosphide MoP having densely situated lattice was synthesized. The complete confirmation of the main laws of structural and phased transformations at ion implantation established by results on molybdenum monocrystals with OCC lattice was achieved at realization of similar researches on the other transitive metal - zirconium which differs from molybdenum according to a number of attributes: a type of an initial lattice structural condition (large scaled polycrystal), presence of interparticle borders and high solubility of atmospheric impurities (nitrogen, carbon, oxygen). The discovered laws have proved to be true also according to ion implanted samples of monocrystal tungsten and polycrystal tantalum

  2. The enhancement in wear resistance of W18Cr4V steel by ion implantation

    International Nuclear Information System (INIS)

    Two new methods of ion implantation were adopted in comparison with nitrogen implantation: carbon monoxide was implanted directly into W18Cr4V steel, and nitrogen was implanted into a deposited titanium film about 1000 A thick. It is shown that higher surface hardness and wear resistance have been achieved. The composition and phase structure of the implanted layer was determined in detail. The wear mechanisms were discussed

  3. Wear resistance of ion-implanted metallic materials

    International Nuclear Information System (INIS)

    The present work is devoted to the study of the effect of ion implantation on the wear resistance of materials. Steel 3 and copper cylinder specimens were irradiated with 40 keV carbon, zirconium, titanium, niobium, lead, molybdenum and chromium continuous ion beams and a 200 keV pulsed carbon ion beam with fluences of 1017 ions cm-2 and 1013 ions cm-2 respectively. The loss of mass during friction of the butt surface against the rotating disk was taken as the measure of wear. For materials irradiated with continuous ion beams the depth of the layer with increased wear resistance was about 80-100μm, which is two orders of magnitude greater than the depth of penetration of the implanted ions. In the case of ion implantation with a pulsed ion beam for a short period of time, a great amount of heat was generated. The speed of its dissipation into the bulk of a specimen depends on the thermal conductivity of the material, and hardening of the wear-surface layer starts with cooling at some speed. (orig.)

  4. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie

    2013-01-01

    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  5. Radioactive ion implantation of thermoplastic elastomers

    OpenAIRE

    Borcea, Veronica

    2008-01-01

    The radioactive ion implantation wear measuring method (RII) has been used for many years as a tool to make highly sensitive real-time in-situ measurements of wear and corrosion in metallic or ceramic materials. The method consists of the controlled implantation of radioactive ions of limited decay time in a thin layer at the surface of the material. The progressive abrasion of the material results in a decline in radioactivity which is followed to monitor material losses. The application ...

  6. Synthesis of compounds by high-fluence nitrogen ion implantation in titanium

    International Nuclear Information System (INIS)

    Polycrystalline titanium is implanted with nitrogen ions at energies from 30 to 60 keV and with doses from 1 x 1016 to 1.5 x 1018 ions/cm2 at room temperature. The phase formation, concentration distribution of implanted ions and the influence of carbon are investigated by high voltage electron microscopy, transmission electron diffraction, and Auger electron spectroscopy. The surface topography of implanted titanium after wear treatment is studied by scanning electron microscopy. Results are discussed briefly. (author)

  7. Synthesis of copper nanoparticles in polycarbonate by ion implantation

    Indian Academy of Sciences (India)

    Annu Sharma; Suman Bahniwal; Sanjeev Aggarwal; S Chopra; D Kanjilal

    2011-07-01

    Copper nanoparticles have been synthesized in polycarbonate by 75 KeV Cu– ion implantation with various doses ranging from 6.4 × 1015 to 1.6 × 1017 ions/cm2 with a beam current density of 800 nA/cm2. The composites formed were structurally characterized using Ultraviolet-Visible (UV-Visible) absorption spectroscopy. The appearance of particle plasmon resonance peak, characteristic of copper nanoparticles at 603 nm in absorption spectra of polycarbonate implanted to a dose of 1.6 × 1017 ions/cm2, indicates towards the formation of copper nanoparticles in polycarbonate. Transmission electron microscopy further confirms the formation of copper nanoparticles having size ∼ 3.15 nm. The formation of copper nanoparticles in the layers carbonized by Cu– implantation has been discussed. The synthesized copper-polycarbonate nanocomposite has been found to be more conducting than polycarbonate as ascertained using current–voltage characteristics.

  8. Ion implantations of oxide dispersion strengthened steels

    Science.gov (United States)

    Sojak, S.; Simeg Veternikova, J.; Slugen, V.; Petriska, M.; Stacho, M.

    2015-12-01

    This paper is focused on a study of radiation damage and thermal stability of high chromium oxide dispersion strengthened steel MA 956 (20% Cr), which belongs to the most perspective structural materials for the newest generation of nuclear reactors - Generation IV. The radiation damage was simulated by the implantation of hydrogen ions up to the depth of about 5 μm, which was performed at a linear accelerator owned by Slovak University of Technology. The ODS steel MA 956 was available for study in as-received state after different thermal treatments as well as in ions implanted state. Energy of the hydrogen ions chosen for the implantation was 800 keV and the implantation fluence of 6.24 × 1017 ions/cm2. The investigated specimens were measured by non-destructive technique Positron Annihilation Lifetime Spectroscopy in order to study the defect behavior after different thermal treatments in the as-received state and after the hydrogen ions implantation. Although, different resistance to defect production was observed in individual specimens of MA 956 during the irradiation, all implanted specimens contain larger defects than the ones in as-received state.

  9. Synthesis of titanium sapphire by ion implantation

    International Nuclear Information System (INIS)

    Since laser action was first demonstrated in titanium sapphire (Ti:Al2O3) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al2O3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al2O3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti3+. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al2O3 waveguide. (authors)

  10. Aligned ion implantation using scanning probes

    International Nuclear Information System (INIS)

    A new technique for precision ion implantation has been developed. A scanning probe has been equipped with a small aperture and incorporated into an ion beamline, so that ions can be implanted through the aperture into a sample. By using a scanning probe the target can be imaged in a non-destructive way prior to implantation and the probe together with the aperture can be placed at the desired location with nanometer precision. In this work first results of a scanning probe integrated into an ion beamline are presented. A placement resolution of about 120 nm is reported. The final placement accuracy is determined by the size of the aperture hole and by the straggle of the implanted ion inside the target material. The limits of this technology are expected to be set by the latter, which is of the order of 10 nm for low energy ions. This research has been carried out in the context of a larger program concerned with the development of quantum computer test structures. For that the placement accuracy needs to be increased and a detector for single ion detection has to be integrated into the setup. Both issues are discussed in this thesis. To achieve single ion detection highly charged ions are used for the implantation, as in addition to their kinetic energy they also deposit their potential energy in the target material, therefore making detection easier. A special ion source for producing these highly charged ions was used and their creation and interactions with solids of are discussed in detail. (orig.)

  11. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  12. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  13. Cd ion implantation in AlN

    International Nuclear Information System (INIS)

    Highlights: ► Cd ion implanted in AlN thin films. ► XRD shows damage produced during implantation. ► Annealing recovers damage in low fluence sample. ► RBS/C measurements show that Cd occupies substitutional sites. ► Cd can be a good candidate for p-type doping. - Abstract: AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

  14. Cell adhesion and growth on ion-implanted polymer surface

    International Nuclear Information System (INIS)

    The adhesion and growth of endothelial cells on ion-implanted polystyrene and segmented polyurethane surface were investigated. Ions of Na+, N2+, O2+, Ar+ and Kr+ were implanted to the polymer surface with ion fluences between 1 x 1015 and 3 x 1017 ions/cm2 at energy of 150 KeV at room temperature. Ion-implanted polymers were characterized by FT-IR-ATR an Raman spectroscopies. The adhesion and proliferation of bovine aorta endothelial cells on ion-implanted polymer surface were observed by an optical microscope. The rate of growth of BAECs on ion-implanted PSt was faster than that on non-implanted PSt. Complete cell adhesion and growth were observed on ion-implanted SPU, whereas the adhesion and growth of BAECs on the non-implanted SPU was not observed. It was attempted to control the cell culture on the ion-implanted domain fabricated using a mask. (author)

  15. Ion implantation of silicon nitride ball bearings

    Energy Technology Data Exchange (ETDEWEB)

    Williams, J.M. [Oak Ridge National Lab., TN (United States); Miner, J.R. [United Technologies, Pratt and Whitney, West Palm Beach, FL (United States)

    1996-09-01

    Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at fluence 1.1x10{sup 17}/cm{sup 2}. The samples had preexisting surface defects (C-cracks), so the failure rate of the control group was unacceptable. None of the ion-implanted samples failed in 150 h of testing. Probability of randomly selecting 6 samples from the control group that would perform this well is about 5%, so there is good probability that ion implantation improved performance. Possible reasons are discussed. Wear tracks, microstructure, and impurity content were studied in possible relation to C-cracks.

  16. Ion implanted Bragg endash Fresnel lens

    International Nuclear Information System (INIS)

    We have investigated the feasibility of widening the bandpath of the Bragg endash Fresnel optical element through the use of ion implantation. The focusing properties of Bragg endash Fresnel lenses (BFLs) were studied as a function of the implantation dose and energy. An enhancement of the focus intensity of up to 15% was found, which is less than expected. Due to the complicated scattering of the low energy ions inside the micrometer- and submicrometer-sized crystal features that make up the BFL relief, the implantation technology destroys the peripheral zones of the BFL more than it increases the intensity in the focus. Nevertheless we believe that high energy implantation can be successfully used to modify the BFL reflectivity, especially in the case of nearly backscattering reflection. copyright 1996 American Institute of Physics

  17. Ion implantation of boron in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Jones, K.S.

    1985-05-01

    Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (<1 x 10/sup 12//cm/sup 2/). Three damage related hole traps are produced by ion implantation of /sup 11/B/sup +/. Two of these hole traps have also been observed in ..gamma..-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (<300/sup 0/C). Boron, from room temperature implantation of BF/sub 2//sup +/ into Ge, is not substitutionally active prior to a post implant annealing step of 250/sup 0/C for 30 minutes. After annealing additional shallow acceptors are observed in BF/sub 2//sup +/ implanted samples which may be due to fluorine or flourine related complexes which are electrically active.

  18. Plasma immersion ion implantation for silicon processing

    Science.gov (United States)

    Yankov, Rossen A.; Mändl, Stephan

    2001-04-01

    Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 m technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII - fast process, implantation of the whole surface, low cost of ownership - several peculiarities - like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission - must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart-Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.

  19. Ion-implantation damage in silicate glasses

    Science.gov (United States)

    Arnold, G. W.

    Ion implantation is a rapid technique for simulating damage induced by alpha recoil nuclei in nuclear waste forms. The simulation has been found to be quite good in TEM comparisons with natural alpha decay damage in minerals, but leach rate differences have been observed in glass studies and were attributed to dose rate differences. The similarities between ion implantation and recoil nuclei as a means of producing damage suggest that insights into the long term behavior of glass waste forms can be obtained by examination of what is known about ion implantation damage in silicate glasses. This paper briefly reviews these effects and shows that leaching results in certain nuclear waste glasses can be understood as resulting from plastic flow and track overlap. Phase separation is also seen to be a possible consequence of damage induced compositional changes.

  20. High dose uranium ion implantation into silicon

    International Nuclear Information System (INIS)

    Implantation of uranium ions into silicon to a maximum dose of 6 x 1016 atoms/cm2, with a maximum concentration of 6 x 1021 atoms/cm3, has been carried out. This concentration corresponds to 12 at. % of uranium in the silicon host material. The implanted uranium content was measured by Rutherford backscattering and confirmed by a measurement of the alpha-particle activity of the buried uranium layer. The range and straggling of the uranium, and sputtering of the silicon target by uranium, were measured and are compared with theoretical estimates. The implantation was performed at an ion mean energy of 157 keV using a new kind of high current metal ion source

  1. Simulation of ion implantation for ULSI technology

    CERN Document Server

    Hoessinger, A

    2000-01-01

    approximately constant an almost linear performance gain could be achieved by the parallelization method, even if a fairly slow network connects the workstations. Finally, the developed Monte-Carlo ion implantation simulator is applied to a set of examples making use of some of the special features of the simulator. Additionally a small operating manual for the simulator is included in the appendix. been developed and implemented. These methods enable to treat the implantation of molecular ions and atom clusters and thus the implantation of BF, which is a widely used for the doping with boron atoms. By providing two methods for the simulation of molecular ions the functionality of the simulator can be adapted to the problem requirements. While the simplified molecular method needs less computation time, the full molecular method provides more precise results. Another part of this work was the design and the implementation of a point response interface method. It allows to interface Monte-Carlo simulation resu...

  2. Friction and wear study of diamond-like carbon gradient coatings on Ti6Al4V substrate prepared by plasma source ion implant-ion beam enhanced deposition

    International Nuclear Information System (INIS)

    DLC gradient coatings had been deposited on Ti6Al4V alloy substrate by plasma source ion implantation-ion beam enhanced deposition method and their friction and wear behavior sliding against ultra high molecular weight polyethylene counterpart were investigated. The results showed that DLC gradient coated Ti6Al4V had low friction coefficient, which reduced 24, 14 and 10% compared with non-coated Ti6Al4V alloy under dry sliding, lubrication of bovine serum and 0.9% NaCl solution, respectively. DLC gradient coated Ti6Al4V showed significantly improved wear resistance, the wear rate was about half of non-coated Ti6Al4V alloy. The wear of ultra high molecular weight polyethylene counterpart was also reduced. High adhesion to Ti6Al4V substrate of DLC gradient coatings and surface structure played important roles in improved tribological performance, serious oxidative wear was eliminated when DLC gradient coating was applied to the Ti6Al4V alloy

  3. Friction and wear study of diamond-like carbon gradient coatings on Ti6Al4V substrate prepared by plasma source ion implant-ion beam enhanced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Shuwen; Jiang Bin; Li Yan; Li Yanrong; Yin Guangfu; Zheng Changqiong

    2004-09-15

    DLC gradient coatings had been deposited on Ti6Al4V alloy substrate by plasma source ion implantation-ion beam enhanced deposition method and their friction and wear behavior sliding against ultra high molecular weight polyethylene counterpart were investigated. The results showed that DLC gradient coated Ti6Al4V had low friction coefficient, which reduced 24, 14 and 10% compared with non-coated Ti6Al4V alloy under dry sliding, lubrication of bovine serum and 0.9% NaCl solution, respectively. DLC gradient coated Ti6Al4V showed significantly improved wear resistance, the wear rate was about half of non-coated Ti6Al4V alloy. The wear of ultra high molecular weight polyethylene counterpart was also reduced. High adhesion to Ti6Al4V substrate of DLC gradient coatings and surface structure played important roles in improved tribological performance, serious oxidative wear was eliminated when DLC gradient coating was applied to the Ti6Al4V alloy.

  4. Engineering single photon emitters by ion implantation in diamond.

    Science.gov (United States)

    Naydenov, B; Kolesov, R; Batalov, A; Meijer, J; Pezzagna, S; Rogalla, D; Jelezko, F; Wrachtrup, J

    2009-11-01

    Diamond provides unique technological platform for quantum technologies including quantum computing and communication. Controlled fabrication of optically active defects is a key element for such quantum toolkit. Here we report the production of single color centers emitting in the blue spectral region by high energy implantation of carbon ions. We demonstrate that single implanted defects show sub-poissonian statistics of the emitted photons and can be explored as single photon source in quantum cryptography. Strong zero phonon line at 470.5 nm allows unambiguous identification of this defect as interstitial-related TR12 color center. PMID:19956415

  5. Iron ion implantation into C60 layer

    International Nuclear Information System (INIS)

    Complete text of publication follows. The soccer ball shaped carbon molecule consisting of 60 carbon atoms (C60, fullerene) was discovered in 1985. Since that time the fullerene has become intensively studied. This special molecule has much potential in medical care, biotechnology and nanotechnology. We are motivated to produce special type fullerenes, so called endohedral fullerenes (some alien atoms are encapsulated inside the fullerene cage). The spring of our motivation is that the Fe at C60 could be applied as a contrast material for MRI (Magnetic Resonance Imaging) or microwave heat therapy. One way to make X at C60 is the surface production using an ECRIS (Electron Cyclotron Resonance Ion Source). An evaporated or preprepared fullerene layer is irradiated by ions to form a new material during the implantation. By this method several kinds of atomic species, such as Li, Na, K, Rb, Xe were encapsulated into the fullerenes. However evidence for the Fe at C60 has not been found yet. During the analysis of the irradiated samples three questions must be answered. 1. Are there iron atoms in the layer and where? 2. Does the iron bond to the fullerene? 3. How does the iron bond to the fullerene, inside or outside? Using different investigation tools, SNMS (Secondary Neural Mass Spectrometer), MALDI-TOF (Matrix Assisted Laser Desorption Ionization Time of Flight), XPS (Xray Photoelectron Spectroscopy) or HPLC (High-Performance Liquid Chromatography), all these questions could be clarified step by step. In this paper we made the first steps to answer the first question: fullerene layers irradiated by iron ion beam delivered by the ATOMKI-ECRIS have been analyzed by the ATOMKI-SNMS. The evaporated 90 - 120 nm thick fullerene layers on Si holder were irradiated by Fe5+ and Fe+ ion beams produced from Ferrocene vapor. Samples were irradiated with two different doses (5 1018 ion/cm3 and 1022 ion/cm3) at four ion energies (65 keV, 6.5 keV, 0.2 keV and two of these samples

  6. Molecular Ion Beam Transportation for Low Energy Ion Implantation

    International Nuclear Information System (INIS)

    A joint research and development of steady state intense boron ion sources for 100's of electron-volt ion implanters has been in progress for the past five years. Current density limitation associated with extracting and transporting low energy ion beams result in lower beam currents that in turn adversely affects the process throughput. The transport channel with electrostatic lenses for decaborane (B10H14) and carborane (C2B10H12) ion beams transportation was developed and investigated. The significant increase of ion beam intensity at the beam transport channel output is demonstrated. The transport channel simulation, construction and experimental results of ion beam transportation are presented.

  7. Nanometer structure and conductor mechanism of polymer modified by metal ion implantation

    Institute of Scientific and Technical Information of China (English)

    吴瑜光; 张通和; 张燕文; 张荟星; 张孝吉; 周固

    2001-01-01

    Polyethylene terephthalate (PET) has been modified by Ag, Ti, Cu and Si ion implanta-tion with a dose ranging from 1 × l016 to 2 x 1017 ions/cm2 using a metal vapor vacuum arc (MEVVA)source. The electrical properties of PET have been improved by metal ion implantation. The resistivityof implanted PET decreased obviously with an increase in ion dose. The results show that the conduc-tive behavior of a metal ion implanted sample is different from Si-implantation samples. In order to un-derstant the mechanism of electrical conduction, the structures of implanted layer were observed in de-tail by XRD and TEM. The nano carbon particles were dispersed in implanted PET. The nano metallicparticles were built up in metallic ion implanted layers with dose range from 1 × 1016 to 1 x 1017 ions/cm2. The nanometer metal net structure was formed in implanted layer when a dose of 2 x 1017ions/cm2 is reached. Anomalous fractal growths were observed. These surface structure changes revealedconducting mechanism evolution, lt is believed that the change would result in an improvement of theconductive properties. The conducting mechanism will be changed with increasing metal ion dose.

  8. Hybrid quantum circuit with implanted erbium ions

    International Nuclear Information System (INIS)

    We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er3+ ions in Y2SiO5 coupled to an array of superconducting lumped element microwave resonators. The Y2SiO5 crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y2SiO5 sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

  9. /sup 252/Cf plasma desorption in ion implanted mica

    Energy Technology Data Exchange (ETDEWEB)

    Maurette, M. (Paris-11 Univ., 91 - Orsay (France). Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse); Banifatemi, A.; Della-Negra, S.; Le Beyec, Y. (Paris-11 Univ., 91 - Orsay (France). Inst. de Physique Nucleaire)

    1983-05-12

    The potential of heavy-ion stimulated desorption of ions (HISD) for investigating ion implantation effects in insulators is outlined, and a very strong enhancement in HISD of ionized species from ion implanted mica is reported. This enhancement, which generates heavy-ion clusters up to mass approximately equal to 500 AMU, grows around a critical fluence of implanted ions, and originates from two distinct types of radiation damage defects.

  10. Surface modification by ion implantation and ion beam mixing

    International Nuclear Information System (INIS)

    After its successful applications in the semiconductor industry, ion implantation is being employed for other technical applications. The main process in ion implantation is the introduction of additive elements to change the composition and properties of the surface region of a material. We present results demonstrating the important improvement of the wear resistance and friction in a NiTi alloy implanted with nitrogen. The formation of hard TiN precipitates embedded in an amorphous layer is responsible for such modifications. The generation of many atomic displacements in collision cascades during implantation can be also employed as a modification process itself. For instance, the chemical disordering in an implanted Fe60Al40 alloy induces a para- to ferromagnetic transition. The formation of an amorphous surface alloy by ion irradiation at a temperature of 15 K has been shown in Ni50Al50 by in situ RBS, channelling and TEM. The new method of dynamic ion mixing (DIM) combines ion bombardment with simultaneous material deposition and allows thicker adherent coatings to be built up, this is shown for both metallic Cu50Ni50 and ceramic TiB2 coatings. Recent results demonstrating a significant increase in fatigue lifetime of a coated 316 L stainless steel are also reported and discussed. (orig.)

  11. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  12. Lattice damage during ion implantation of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haynes, T.E.

    1993-08-01

    The temperature dependence of the lattice damage created during ion implantation of Si, Ge, Si-Ge alloys, and various III-V compounds is reviewed and interpreted in terms of a transition between two different damage formation mechanisms. Implications of this transition for control of damage, annealing, and electrical activation are discussed, particularly in GaAs.

  13. The effect of ion implantation on the lifetime of punches

    International Nuclear Information System (INIS)

    The electronics industry demands stamped parts with high performance. Therefore, punching tools like cutting punches with very high precision have to be used. In the case reported, the punches are mounted in a modular system and have to be resharpened or replaced after a certain number of strokes. To increase the lifetime of the punches made of Vasco Wear steel, implantations with carbon, nitrogen, boron and titanium, and co-implantation with titanium and carbon were performed at energies from 50 keV to 200 keV and 600 keV and 700 keV with different doses in the region of several times 1018 cm-2, measured perpendicular to the ion beam. A maximum increase in lifetime of a factor of 3.6 was reached. The surface roughness had a large influence on the increase lifetime and the improvement caused by specific ion species. The maximum improvement was obtained for the lowest surface roughness (Ra=0.04 μm). Therefore, when performing the implants, punches with low surface roughness should be used. The most successful ion species were boron and nitrogen for the lowest surface roughness used (Ra=0.04 μm), and after changing the polishing procedure (Ra=0.14 μm) titanium and nitrogen at medium energies (100-200 keV). High energy implantation (700 keV) resulted in an increase of a factor of 2.1 at lower doses (5.6x1017 cm-2), but is uneconomical owing to the low current density. In laboratory wear tests (ball on disk) no improvement by ion implantation could be found. These results prove that it is difficult to compare field tests and laboratory tests because of different testing conditions. (orig.)

  14. Effects of electrical conductivity of substrate materials on microstructure of diamond-like carbon films prepared by bipolar-type plasma based ion implantation

    International Nuclear Information System (INIS)

    Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma based ion implantation, and the structural differences between DLC films deposited on different electrical conductive substrates, i.e., conductive Si wafers and insulating glass plates are examined by Raman spectroscopy and x-ray photo emission spectroscopy (XPS). In the Raman measurements, graphite (G) and disorder (D) peaks are observed for both samples. However, the additional photo luminescence is overlapped on the spectra in the case of on-glass sample. To elucidate the structural difference, the intensity ratio of D to G peak (I(D)/I(G)), G peak position and full width at half maximum (FWHM) are obtained by curve fitting using Gaussian function and linear baseline. It is found that the I(D)/I(G) is lower, G peak position is higher and FWHM of G peak is narrower for on-glass sample than for on-Si sample. According to Robertson [1], lower I(D)/I(G) seems more sp3 C-C bonding in amount for on-glass sample. In contrast, higher G peak position and narrower FWHM of G peak suggest less sp3 C-C bonding in amount for on-glass sample. The results of XPS analysis with C1s spectra reveal that sp3 ratio, i.e., the intensity ratio of sp3/(sp3+sp2) is smaller for on-glass sample than for on-Si sample. The inconsistency of the trend between I(D)/I(G) and other parameters (G peak position and FWHM of G peak) might be caused by the overlap of photo luminescence signal on Raman spectrum as to on-glass sample. From these results, it is considered that sp3 C-C bonding is reduced in amount when using insulating substrate in comparison with conductive substrate.

  15. Semiconductor applications of plasma immersion ion implantation technology

    Indian Academy of Sciences (India)

    Mukesh Kumar; Rajkumar; Dinesh Kumar; P J George

    2002-11-01

    Many semiconductor integrated circuit manufacturing processes require high dose of implantation at very low energies. Conventional beam line ion implantation system suffers from low beam current at low energies, therefore, cannot be used economically for high dose applications. Plasma immersion ion implantation (PIII) is emerging as a potential technique for such implantations. This method offers high dose rate irrespective of implantation energy. In the present study nitrogen ions were implanted using PIII in order to modify the properties of silicon and some refractory metal films. Oxidation behaviour of silicon was observed for different implantation doses. Diffusion barrier properties of refractory barrier metals were studied for copper metallization.

  16. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  17. Superadditivity in the implantation of molecular ions

    International Nuclear Information System (INIS)

    This paper deals with the implantation of molecular ions in silicon. The molecular effect, i.e., the increase of the displacement yield compared with the sum of the atomic yields, is weak for light molecules (e.g., H2) and for heavy diatomic molecules (e.g., Sb2 and Bi2), but, for instance, it is strong for C6H6 at energy per atomic mass of the order of 1 keV/amu. Binary collision calculations are used to give a pictorial view of the phenomena occurring along the ion path, and to predict superadditivity and damage columnarity. The increase of pressure and temperature to extreme conditions by implantation of molecular ions is discussed

  18. Surface microanalytical studies of nitrogen ion-implanted steel

    International Nuclear Information System (INIS)

    Five types of industrial steels, 1018, 52100, M-2, 440C, and 304 were ion implanted with nitrogen and subjected to surface microanalysis by three independent surface techniques: AES, RBS, and SIMS. The results provided understanding for earlier observations of the properties of various types of steel after nitrogen implantation. The steels that retained the most nitrogen and that have been reported to benefit the most in improved tribological properties from ion implantation were ferritic carbon and austenitic stainless steels, such as soft 1018 and 304, respectively. Heat-treated martensitic carbon steels such as 52100 and M-2 tool steel were found to retain the least nitrogen, and they have been reported to benefit less from nitrogen implantation; however, the interaction of transition metal carbides in M-2 with nitrogen has not been clarified. The data showed that 440C steel retained as much nitrogen as 1018 and 304, but treatment benefits may be limited to improvements in properties related to toughness and impact resistance. (orig.)

  19. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He+-ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  20. Thermal Behaviour of W+C Ion Implanted Ultra High Molecular Weight Polyethylene (UHMWPE)

    International Nuclear Information System (INIS)

    The aim of this work was to examine thermal behavior of the surface modified Ultra High Molecular Weight Poly Ethylene (UHMWPE ) in order to understand the effect of ion implantation on the properties of this polymer which is widely used especially for biomedical applications. UHMWPE samples were Tungsten and Carbon (W+C) hybrid ion implanted by using Metal Vapour Vacuum Arc (MEVVA) ion implantation technique with a fluence of 10 17 ions/cm2 and extraction voltage of 30 kV. Untreated and surface-treated samples were investigated by Rutherford Back Scattering (RBS) Analysis, Attenuated Total Reflectance Fourier Transform Infrared (ATR-FTIR) Spectrometry, Thermo Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC). This study has shown that ion implantation represents a powerful tool on modifying thermal properties of UHMWPE surfaces. This combination of properties can make implanted UHMWPE a preferred material for biomedical applications.

  1. Ion sources for energy extremes of ion implantation (invited)

    International Nuclear Information System (INIS)

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P2+ [8.6 pmA (particle milliampere)], P3+ (1.9 pmA), and P4+ (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+Sb4+, Sb5+, and Sb6+ respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources

  2. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    Science.gov (United States)

    Luo, J.; Li, L. H.; Liu, H. T.; Yu, K. M.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Fu, Ricky K. Y.; Chu, Paul K.

    2014-06-01

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  3. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We investigat

  4. Development of ion sources for implantation technology

    International Nuclear Information System (INIS)

    Ion implantation for modification of surface properties of large areas requires ion sources of a particular type. The sources must be capable of producing rather high currents within somewhat poor vacuum conditions. Two types of source are typically used, the glow discharge and the vacuum arc. This paper describes both types. The glow discharge source has a low discharge voltage to minimize beam contamination from metal ions sputtered from the source chamber. To maintain the discharge, electrons are injected from outside the source chamber. The glow discharge source will generate up to 20 mA beam currents. The vacuum arc sources have the advantage of producing high currents of metal ions using a penning discharge. Metal ion currents up to 70 mA are mentioned

  5. Experimental investigation of ion-implanted magnetic recording material

    International Nuclear Information System (INIS)

    The structure changes in ion implanted Permalloy have been observed by reflection high energy electron diffraction and X-ray photoelectron spectrometry. Amorphous phase and metal compound are formed in the surface layer. The magnetic property, mechanical property and surface roughness of the ion implanted samples and frequency response of the ion implanted magnetic head have been measured. The experimental results show that the hardening layer could be formed on the surface of an implanted sample without any degradation of the magnetic property

  6. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO2, Al2O3, Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW)

  7. Carbon Ion Therapy

    DEFF Research Database (Denmark)

    Bassler, Niels; Hansen, David Christoffer; Herrmann, Rochus;

    On the importance of choice of target size for selective boosting of hypoxic tumor subvolumina in carbon ion therapy Purpose: Functional imaging methods in radiotherapy are maturing and can to some extent uncover radio resistant structures found within a tumour entity. Selective boost of identified...... to the surface where the beam enters) are examined. For each plan the minimum,  maximum and the dose averaged LET of the PTV is calculated. The numbers are translated to OER using several sets of data found in literature for various cell lines. Results: We find a strong dependence of the dose average LET and OER...... effect. All cell lines investigated here did not reach an OER of 1, even for the smaller structures, which may indicate that the achievable dose average LET of carbon ions is too low, and heavier ions than carbon may be considered for functional LET-painting....

  8. Effect of ion current density on damage in Al ion implanted SiC

    International Nuclear Information System (INIS)

    The damage created by implantation of Al ions into single crystalline 4H-SiC has been analyzed using a combination of ion beam techniques and spectroscopic ellipsometry. The samples were implanted at room temperature with 150 keV Al+ ions in the fluence range of 4 x 1014 cm-2 to 2 x 1015 cm-2 with current densities of 0.4 and 2.5 μA cm-2. In order to study simultaneously the depth distribution of the disorder produced in both the carbon and silicon sublattice, we used 3.5 MeV He beam in channeling geometry. In this condition the cross-section for carbon is enhanced by a factor of ∼6. The structural recovery of the samples after a further high temperature annealing has been studied. These results have been compared with the optical properties of the samples measured by spectroscopic ellipsometry

  9. Accelerating degradation rate of pure iron by zinc ion implantation.

    Science.gov (United States)

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-12-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  10. Plasma immersion ion implantation for reducing metal ion release

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, C.; Garcia, J. A.; Maendl, S.; Pereiro, R.; Fernandez, B.; Rodriguez, R. J. [Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain); Leibniz-Institut fuer Oberflaechenmodifizierung, 04318 Leipzig (Germany); Universidad de Oviedo, Departamento Quimica Fisica y Analitica (Spain); Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain)

    2012-11-06

    Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

  11. Nonlinear damage effect in graphene synthesis by C-cluster ion implantation

    International Nuclear Information System (INIS)

    We present few-layer graphene synthesis by negative carbon cluster ion implantation with C1, C2, and C4 at energies below 20 keV. The small C-clusters were produced by a source of negative ion by cesium sputtering with medium beam current. We show that the nonlinear effect in cluster-induced damage is favorable for graphene precipitation compared with monomer carbon ions. The nonlinear damage effect in cluster ion implantation shows positive impact on disorder reduction, film uniformity, and the surface smoothness in graphene synthesis.

  12. Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C2H2) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C2H2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel

  13. Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

    Science.gov (United States)

    Zeng, Z. M.; Tian, X. B.; Chu, P. K.

    2003-01-01

    Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C2H2) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C2H2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel.

  14. Study of dual implantation into high speed steel by Ti+ and C+ ions

    International Nuclear Information System (INIS)

    The implantation of titanium plus carbon ion into W9Mo3Cr4V high speed steel was conducted in order to improve tribological properties of the steel. Meanwhile the influence of altering Ti and C implantation order on improvements of surface properties of the steel was also investigated. The hardness of implanted surface was evaluated by an ultramicrohardness test and unlubricated friction and wear tests were performed in a reciprocating ball-on-disk-test. It is shown that titanium plus carbon dual implantation increase the microhardness by 25-50 % and decrease the friction coefficient by a factor of 3 over the unimplanted sample

  15. Ion implantation applied to fusion research

    International Nuclear Information System (INIS)

    Ion implantation and microanalysis have been used to investigate plasma-surface interactions relevant to fusion applications. Previous results for pure metals are reviewed and current results are presented for TiB2 and B4C coatings for tokamak surfaces. Enhanced trapping of implanted, low-energy hydrogen has been shown to occur at room temperature in W, Au, Pd, Mo, Nb, TiB2, and B4C for He or other ion predamage. Hydrogen depth profiles obtained using 1H(19F, αγ)16O resonant nuclear reaction show that the H decorates the He damage profiles at traps whose concentration is proportional to the amount of He-induced damage

  16. A percolation theory approach to the implantation induced diamond to amorphous-carbon transition

    International Nuclear Information System (INIS)

    The physical fact that diamond is electrically insulating while amorphous carbon and graphite are conducting is used in the present work to study the local damage that each implanted ion creates around its track and to conclude about the processes through which implanted diamond turns amorphous. Experimental data for the conductivity of Sb implanted diamond for various geometries, energies and doses are analyzed by the use of percolation theory. It seems that the amorphization of implanted diamond proceeds gradually with no well defined amorphous regions formed around the ion track. Amorphization in implanted diamond seems to occur in a way different than is believed to be the case for implanted silicon, where some direct amorphization around an ion track is suggested. This major difference can be attributed to the abnormally large change in densities between diamond and amorphous carbon or graphite which suppresses the growth of local amorphous regions in diamond. (author)

  17. Damage accumulation in ceramics during ion implantation

    International Nuclear Information System (INIS)

    The damage structures of α-Al2O3 and α-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 3000K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state

  18. Nanoindentation of ion-implanted crystalline germanium

    International Nuclear Information System (INIS)

    Most indentation studies to date on crystalline germanium (c-Ge) and related covalent semiconductors have been carried out on pristine defect-free material. This paper addresses the paucity of studies on imperfect crystalline materials by exploring the impact of defects generated by ion implantation, prior to contact damage, upon the mechanical properties of c-Ge. Implantation with Ge ions is carried out to generate a layer of highly defective but still-crystalline Ge. Under nanoindentation with a sharp diamond tip, enhanced plasticity is observed relative to pristine material. Characterization by cross-sectional transmission electron microscopy, atomic force microscopy, and load curve analysis shows softening, quasiductile extrusion, and cracking suppression taking place. These changes can be explained by the high density of defects, and dangling bonds in particular, created by ion implantation and revealed by positron-annihilation spectroscopy, and are proportional to the fraction of 'missing bonds' or vacancies in the material. A thermal annealing step at 200 deg. C is sufficient to restore the mechanical response of pristine material, despite incomplete recovery of the original pristine crystal structure.

  19. Ion implantation effects in crystalline quartz

    International Nuclear Information System (INIS)

    Cantilever beam measurements of the stress induced in crystalline quartz by implantation of 150 keV Ar and/or 250 keV He have shown that the data scale with energy into collisional processes. The damage state induced by the Ar implants does not lend itself to efficient utilization of the electronic component of subsequent He implantation in producing further disorder. The damage depth has been measured (optically) for a number of ions (1x1016 250 keV/cm2) and has been found to vary (relative to TRIM values) from about 0.63Rp for He to about 1.84Rp for Xe. RBS measurements of range for Ar to Au give values in fair agreement with the optical values. The ratio of the measured (optical) ranges to the predicted (TRIM) ranges, when plotted as a function of collisional energy deposition, indicates that extended damage (beyond ion range) occurs for deposition energies > ∝ 1x1022 keV/cm3. The damage persists even after 900degC anneals. The effects of ion-induced stress may be an important factor in the establishment of the extended damage state. (orig.)

  20. Lithium ion implantation effects in MgO (100)

    NARCIS (Netherlands)

    van Huis, MA; Fedorov, AV; van Veen, A; Labohm, F; Schut, H; Mijnarends, PE; Kooi, BJ; De Hosson, JTM; Triftshauser, W; Kogel, G; Sperr, P

    2001-01-01

    Single crystals of MgO (100) were implanted with 10(16) (6)Li ions cm(-2) at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorp

  1. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  2. Development of a microwave ion source for ion implantations

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, N., E-mail: Nbk-Takahashi@shi.co.jp; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T. [Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555 (Japan)

    2016-02-15

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.

  3. Paramagnetism in ion-implanted oxides

    CERN Document Server

    Mølholt, Torben Esmann; Gíslason, Hafliði Pétur; Ólafsson, Sveinn

    This thesis describes the investigation on para-magnetism in dilute ion-implanted single-crystal oxide samples studied by on- and off-line $^{57}$Fe emission Mössbauer spectroscopy. The ion-implantation of the radioactive isotopes ( $^{57}$Mn and $^{57}$Co) was performed at the ISOLDE facility at CERN in Geneva, Switzerland. The off-line measurements were performed at Aarhus University, Denmark. Mössbauer spectroscopy is a unique method, giving simultaneously local information on valence/spin state of the $^{57}$Fe probe atoms, site symmetry and magnetic properties on an atomic scale. The utilisation of emission Mössbauer spectroscopy opens up many new possibilities compared with traditional transmission Mössbauer spectroscopy. Among them is the possibility of working with a low concentration below 10$^{-4}$ –10$^{-3}$ at.%, where the implanted Mössbauer $^{57}$Fe probes are truly dilute impurities exclusively interacting with their nearest neighbours and therefore the possibility of crea...

  4. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Assmann, W. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany)]. E-mail: walter.assmann@lmu.de; Schubert, M. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany); Held, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany); Pichler, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Muenchen (Germany); Chill, A. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Kiermaier, S. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Schloesser, K. [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany); Busch, H. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Schenk, K. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Streufert, D. [Acri.Tec GmbH, 16761 Hennigsdorf (Germany); Lanzl, I. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany)

    2007-04-15

    A biodegradable, {beta}-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the {beta}-emitter {sup 32}P. The influence of ion implantation and gamma sterilisation on degradation and {sup 32}P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (10{sup 15} ions/cm{sup 2}) and gamma dose (25 kGy) are found to be tolerable.

  5. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    International Nuclear Information System (INIS)

    A biodegradable, β-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the β-emitter 32P. The influence of ion implantation and gamma sterilisation on degradation and 32P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (1015 ions/cm2) and gamma dose (25 kGy) are found to be tolerable

  6. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    Science.gov (United States)

    Assmann, W.; Schubert, M.; Held, A.; Pichler, A.; Chill, A.; Kiermaier, S.; Schlösser, K.; Busch, H.; Schenk, K.; Streufert, D.; Lanzl, I.

    2007-04-01

    A biodegradable, β-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the β-emitter 32P. The influence of ion implantation and gamma sterilisation on degradation and 32P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (1015 ions/cm2) and gamma dose (25 kGy) are found to be tolerable.

  7. Wear properties of metal ion implanted 4140 steel

    International Nuclear Information System (INIS)

    AISI type 4140 (high tensile) steel has been implanted with tungsten and titanium using a metal vapour vacuum arc ion source. Doses in the range (1-5)x1016ionscm-2 were implanted to a depth of approximately 30nm. The relative wear resistance between non-implanted and implanted specimens has been estimated using pin-on-disc and abrasive wear tests. Implantation of titanium decreased the area of wear tracks by a factor of 5 over unimplanted steel. In some cases the steel was also hardened by a liquid carburization treatment before implantation. Abrasion tests revealed a further improvement in wear resistance on this material following ion irradiation. ((orig.))

  8. Surface modification of yttria stabilized zirconia by ion implantation

    International Nuclear Information System (INIS)

    The results of investigations of surface modification by ion implantation in zirconia are described. As dopant material, iron was investigated thoroughly. The depth distribution of implanted ions depends on implantation parameters and the dopant-matrix system. The investigations of thermal stability of some implanted iron profiles by RBS and AES are described. Special interest lies in the thermal stability under working conditions of the zirconia material (400-10000C). Radiation damage introduced in the implanted layer was investigated using transmission electron microscopy on polycrystalline material and channeling experiments on a single crystal implanted with iron. 179 refs.; 87 figs.; 20 tabs

  9. Studying of ion implantation effect on the biology in China

    International Nuclear Information System (INIS)

    Since low energy ion effect on the biology was observed, the ion implantation as a new mutagenic source has been widely used in improving crops and modifying microbes in China. The basic phenomenon of ion implantation effect on the biology and analytical results are reported, and the examples of its application and its further development are shown

  10. Computational stochastic model of ions implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zmievskaya, Galina I., E-mail: zmi@gmail.ru; Bondareva, Anna L., E-mail: bal310775@yandex.ru [M.V. Keldysh Institute of Applied Mathematics RAS, 4,Miusskaya sq., 125047 Moscow (Russian Federation); Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru [VNII Geosystem Russian Federal Center, Varshavskoye roadway, 8, Moscow (Russian Federation); Maino, Giuseppe, E-mail: giuseppe.maino@enea.it [Scuola di Lettere e BeniCulturali, University di Bologna, sede di Ravenna, via Mariani 5, 48100 Ravenna (Italy)

    2015-03-10

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

  11. Computational stochastic model of ions implantation

    International Nuclear Information System (INIS)

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe++ irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage

  12. Mutagenesis of Arabidopsis Thaliana by N+ Ion Implantation

    Science.gov (United States)

    Zhang, Genfa; Shi, Xiaoming; Nie, Yanli; Jiang, Shan; Zhou, Hongyu; Lu, Ting; Zhang, Jun

    2006-05-01

    Ion implantation, as a new biophysically mutagenic technique, has shown a great potential for crop breeding. By analyzing polymorphisms of genomic DNA through RAPD-based DNA analysis, we compared the frequency and efficiency of somatic and germ-line mutations of Arabidopsis thaliana treated with N+ ion implantation and γ-rays radiation. Our data support the following conclusions: (1) N+ ion implantation can induce a much wider spectrum of mutations than γ-rays radiation does; (2) Unlike the linear correlation between the doses and their effect in γ-rays radiation, the dose-effect correlation in N+ ion implantation is nonlinear; (3) Like γ-rays radiation, both somatic and germ-line mutations could be induced by N+ ion implantation; and (4) RAPD deletion patterns are usually seen in N+ ion implantation induced mutation.

  13. Production of Endohedral Fullerenes by Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  14. Ion implantation to reduce wear on polyethylene prosthetic devices. Rept. for Aug 89-Jan 91

    International Nuclear Information System (INIS)

    Researchers studied the use of ion implantation to improve the wear performance of ultra high molecular weight polyethylene (UHMWPE). UHMWPE samples were implanted with high energy ions, tested for wear performance, and compared to unimplanted control samples. Surface friction and hardness measurements, Raman scattering, Rutherford backscattering (RBS), water contact angle, and film transfer tests were performed to characterize the surface property changes of implanted UHMWPE samples. Results indicated a 90% reduction in wear on implanted UHMWPE disks. Implantation increased surface microhardness and surface energy. The Raman spectrum revealed a diamond-like signature, indicting carbon bonds of a different nature than those found in unimplanted polyehtylene. Photographic analysis of pins used in wear testing revealed differences between implanted and unimplanted samples in the polyethylene film transferred in the initial stages of wear from the disk to the pin

  15. Improved tribology of tool steel by zirconium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Akbas, N.; Oztarhan, A.; Monteiro, O.R.; Brown, I.G.

    2001-02-01

    AISI D3 tool steel was ion implanted with zirconium and the improvement in surface tribological properties investigated. The Zr ion implantation was done using a metal vapor vacuum arc broad-beam ion source, with a mean ion energy of 130 keV and at doses of 3.6 x 10(sup 16), 5 x 10(sup 16) and 1 x 10(sup 17) ions/cm2. Wear, friction and hardness of the implanted samples were measured and compared to the performance of unimplanted steel. The wear resistance was increased by about a factor of two, the friction remained about the same or was possibly increased by a small amount, and the hardness was improved by a factor of five or more by the ion implantation. We also investigated the effect on the Zr implantation profile of the multi-component energy distribution of the ion beam used here.

  16. Experimental investigation of plasma-immersion ion implantation treatment for biocompatible polyurethane implants production

    Science.gov (United States)

    Iziumov, R. I.; Beliaev, A. Y.; Kondyurina, I. V.; Shardakov, I. N.; Kondyurin, A. V.; Bilek, M. M.; McKenzie, D. R.

    2016-04-01

    Modification of the surface layer of polyurethane with plasma-immersion ion implantation (PIII) and studying its physical and chemical changes have been discussed in this paper. The goal of the research was to obtain carbonized layer allowing creating biocompatible polyurethane implants. The experiments of PIII treatment in various modes were performed. The investigation of the modified surface characteristics was carried out by observing the kinetics of free surface energy for two weeks after treatment. The regularities between treatment time and the level of free surface energy were detected. The explanation of high energy level was given through the appearance of free radicals in the surface layer of material. The confirmation of the chemical activation of the polyurethane surface after PIII treatment was obtained.

  17. Ion-implanted diamond films and their tribological properties

    International Nuclear Information System (INIS)

    This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 μm) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C+ (m/e=12) at an ion energy of 160 eV and a fluence of 6.72 x 1017 ions cm-2. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10-7 Pa), dry nitrogen and humid air (40% RH) environments. The effects of C+ ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments. (orig.)

  18. Improvements in sliding wear for bearing-grade steel implanted with titanium and carbon

    International Nuclear Information System (INIS)

    Sliding wear tests have been performed on ion-implanted AISI 52100 steel wearing on two different commercial alloys. AISI 52100 wear rings were implanted either with a 55 keV titanium beam to a dose of 2 X 1017 ions cm-2 or with a dual beam of titanium at 55 keV followed by a carbon beam of 35 keV both to a dose of 2 X 1017 ions cm-2. The performances of titanium- and titanium-plus-carbon-implanted rings have been tested in a block-on-ring apparatus. The wear on the blocks has been measured and compared with ion-implanted and non-treated AISI 52100 steel rings. The results clearly show that the ion-implanted ring samples manifest a significant reduction in wear of the mating blocks. The data also indicate that the scatter in the wear results (the wear variability) is much reduced for blocks worn against the ion-implanted samples. The analysis of the surfaces supports the formation of a protective layer by the ion implantation process. (Auth.)

  19. Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene

    International Nuclear Information System (INIS)

    The effect of ion implantation including ion species (N2+ and C3H8+) and the fluences (1x1014-5x1015 ions/cm2) on the surface energy of ultrahigh molecular weight polyethylene (UHMWPE) were investigated. The total surface energy increases significantly after implanting with the fluence of 1x1014 ions/cm2 regardless of ion species, then, the total surface energy slightly increases for N2+ implanted UHMWPE and decreases slightly for C3H8+ implanted UHMWPE with a further increase of fluence. The structural changes of UHMWPE with different fluence for different ion species are very similar. The linear chains of UHMWPE are damaged and cross linking is generated after implantation. As the fluence increases, the polymer surface becomes more disordered, and the surface becomes hydrogenated amorphous carbon when the fluence exceeds 1x1015 ions/cm2. The surface roughness increases with the increase of the fluence regardless of ion implantation species

  20. Characterisation of polystyrene coatings after plasma immersion ion implantation and adsorption of protein

    CERN Document Server

    Dekker, S; Steel, B; Bilek, M M M; McKenzie, D R; James, M

    2012-01-01

    A polystyrene film spun onto polished silicon substrates was implanted with either nitrogen or argon ions using plasma immersion ion implantation (PIII) and subsequently investigated by X-ray and neutron reflectometry, UV-VIS and FTIR ellipsometry, as well as by FTIR and Raman spectroscopy. The depth profile of the densified carbon structures resulting from the ion collision cascades in the polystyrene coating are clearly observed by both X-ray and neutron reflectometry. Argon ions produce a higher density modified layer at a shallower depth than nitrogen ions. The thickness measured for these graded layers agrees with the expected depths of ion implantation as calculated by SRIM. The sensitivity of X-ray and neutron reflectometry allows resolution of density and hydrogen content gradients within the graphitized layers. The treated layers were found to covalently immobilized protein directly from solution. The tropoelastin protein monolayers immobilized on the surface were characterized. Tropoelastin remained...

  1. Optical properties of nano-structured material in ion-implanted polymer

    International Nuclear Information System (INIS)

    Being of importance for applications of ion-implanted PMMA in integrated optics, optoelectronics and optical communication, we have studied the optical properties (controlled through the complex refractive index) of nano-structured material in silicon ion (Si+) implanted polymethylmethacrylate (PMMA). PMMA was implanted with Si+ ions accelerated to a relatively low energy of 50 keV at a high fluence of 3.2×1015 Si+/cm2. The carbon nano-clustered material in the ion-modified surface layer of Si+-implanted PMMA of a thickness of about 100 nm was optically characterized by reflectance measurements, as well as by reflection ellipsometry at a wavelength of 632.8 nm (He-Ne laser)

  2. PLEPS study of ions implanted RAFM steels

    Science.gov (United States)

    Sojak, S.; Slugeň, V.; Egger, W.; Ravelli, L.; Petriska, M.; Veterníková, J.; Stacho, M.; Sabelová, V.

    2014-04-01

    Current nuclear power plants (NPP) require radiation, heat and mechanical resistance of their structural materials with the ability to stay operational during NPP planned lifetime. Radiation damage much higher, than in the current NPP, is expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Investigation of perspective structural materials for new generations of nuclear power plants is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels. These steels have good characteristics as reduced activation, good resistance to volume swelling, good radiation, and heat resistance. Our experiments were focused on the study of microstructural changes of binary Fe-Cr alloys with different chromium content after irradiation, experimentally simulated by ion implantations. Fe-Cr alloys were examined, by Pulsed Low Energy Positron System (PLEPS) at FRM II reactor in Garching (Munich), after helium ion implantations at the dose of 0.1 C/cm2. The investigation was focused on the chromium effect and the radiation defects resistivity. In particular, the vacancy type defects (monovacancies, vacancy clusters) have been studied. Based on our previous results achieved by conventional lifetime technique, the decrease of the defects size with increasing content of chromium is expected also for PLEPS measurements.

  3. Biological Effects on Fruit Fly by N+ ion Beam Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Mutation induced by low energy ion beam implantation has beenapplied widely both in plants and microbes. However, due to the vacuum limitation, such ion implantation into animals was never studied except for silkworm. In this study, Pupae of fruit fly were irradiated with different dosage N+ ions at energy 20 KeV to study the biological effect of ion beam on animal. The results showed a saddle-like curve exists between incubate rate and dosage. Damage of pupae by ion beam implantation was observed using scanning electron microscope. Some individuals with incomplete wing were obtained after implantation but no similar character was observed in their offspring. Furthermore, about 5.47% mutants with wide variation appeared in M1 generation. Therefore, ion beam implantation could be widely used for mutation breeding.

  4. Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Lohner, T.; Zolnai, Z.; Petrik, P.; Battistig, G.; Koos, A.; Osvath, Z.; Fried, M. [Research Institute for Technical Physics and Materials Science, Konkoly Thege Miklos ut 29-33, 1121 Budapest (Hungary); Garcia Lopez, J.; Morilla, Y. [Centro Nacional de Aceleradores, Av. Thomas A. Edison 7, 41092 Sevilla (Spain)

    2008-05-15

    Measuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni{sup +} ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose {sup 4}He{sup +} ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165 detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar{sup +} implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

    Science.gov (United States)

    Poon, R. W. Y.; Liu, X. Y.; Chung, C. Y.; Chu, P. K.; Yeung, K. W. K.; Lu, W. W.; Cheung, K. M. C.

    2005-05-01

    Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested.

  6. Preparation of Platinum Implanted Glassy Carbon Electrode and Electro-oxidation of Formic Acid and Formaldehyde

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The glassy carbon substrates were bombarded with 5×1017 ions/cm2 of platinum.The surface composition of implanted electrode and concentration-depth profiles of various elements were measured by AES.The chemical state of Pt in glassy carbon electrode implanted with platinum (Pt/GC) was detected by X-ray Photoelectron Spectroscopy (XPS).The electro-oxidation of HCOOH and HCHO have been investigated on Pt/GC and smooth Pt electrodes.The results show that the platinum implanted into glassy carbon is much more active than the smooth platinum metal for electro-oxidation of HCOOH and HCHO.

  7. N-ion implantation assisted by preparative and closing implantation for surface modification of tool steel

    International Nuclear Information System (INIS)

    The study aims at investigating the effect of auxiliary preparative and closing implantations in hardened tool steels on surface tribology modification. Samples of a martensitic tool steel, SKD11, are triply implanted with ions of N or Ar at higher energies, N at the normal energy, and N, BF and CO2 at lower energies. The ion implantations result in dramatic increases of hardness and wear resistance to the samples in comparison with single N-ion implantation and double ion implantation. Analysis of ion depth profiles and surface compositions and microstructures is performed to reveal the mechanisms. It can be concluded that the improvement of the mechanical properties can be attributed to the deepening in the ion penetration and the forming of compound covers at the near surface region

  8. N-ion implantation assisted by preparative and closing implantation for surface modification of tool steel

    Energy Technology Data Exchange (ETDEWEB)

    Vilaithong, T.; Yu, L.D. E-mail: yuld@istrd.cmu.ac.th; Vichaisirimongkol, P.; Rujijanagul, G.; Sonkaew, T

    1999-01-02

    The study aims at investigating the effect of auxiliary preparative and closing implantations in hardened tool steels on surface tribology modification. Samples of a martensitic tool steel, SKD11, are triply implanted with ions of N or Ar at higher energies, N at the normal energy, and N, BF and CO{sub 2} at lower energies. The ion implantations result in dramatic increases of hardness and wear resistance to the samples in comparison with single N-ion implantation and double ion implantation. Analysis of ion depth profiles and surface compositions and microstructures is performed to reveal the mechanisms. It can be concluded that the improvement of the mechanical properties can be attributed to the deepening in the ion penetration and the forming of compound covers at the near surface region.

  9. Threshold voltage shift of mos transistors by ion implantation

    International Nuclear Information System (INIS)

    The simple theory of the use of ion implantation of mos transistors to shift threshold voltage is outlined. Discrepancies between theory and practice are discussed. A modified model is proposed in which all implanted ions contribute to the threshold voltage shift irrespective of energy levels. (U.K.)

  10. Influence of Ro radiation upon ion-implanted MOS structures

    International Nuclear Information System (INIS)

    The interaction of Ro radiation with defects in ion-implanted MOS structures is studied using the method of thermally stimulated charge release and C/V method. It is shown that preliminary treatment with Ro radiation decreases the temperature of thermal annealing of the radiation defects introduced by ion-implantation up to 4500C. (author)

  11. Implantation of Energetic D+ Ions into Carbon Dioxide Ices and Implications for our Solar System: Formation of D2O and D2CO3

    Science.gov (United States)

    Bennett, Chris J.; Ennis, Courtney P.; Kaiser, Ralf I.

    2014-10-01

    Carbon dioxide (CO2) ices were irradiated with energetic D+ ions to simulate the exposure of oxygen-bearing solar system ices to energetic protons from the solar wind and magnetospheric sources. The formation of species was observed online and in situ by exploiting FTIR spectroscopy. Molecular products include ozone (O3), carbon oxides (CO3(C 2v , D 3h ), CO4, CO5, CO6), D2-water (D2O), and D2-carbonic acid (D2CO3). Species released into the gas phase were sampled via a quadrupole mass spectrometer, and possible minor contributions from D2-formaldehyde (D2CO), D4-methanol (CD3OD), and D2-formic acid (DCOOD) were additionally identified. The feasibility of several reaction networks was investigated by determining their ability to fit the observed temporal column densities of 10 key species that were quantified during the irradiation period. Directly relevant to the CO2-bearing ices of comets, icy satellites in the outer solar system, and the ice caps on Mars, this work illustrates for the first time that D2-water is formed as a product of the exposure of CO2 ices to D+ ions. These findings provide strong support for water formation from oxygen-bearing materials via non-thermal hydrogen atoms, and predict reaction pathways that are likely to be unfolding on the surfaces of asteroids and the Moon.

  12. Implantation of energetic D+ ions into carbon dioxide ices and implications for our solar system: formation of D2O and D2CO3

    International Nuclear Information System (INIS)

    Carbon dioxide (CO2) ices were irradiated with energetic D+ ions to simulate the exposure of oxygen-bearing solar system ices to energetic protons from the solar wind and magnetospheric sources. The formation of species was observed online and in situ by exploiting FTIR spectroscopy. Molecular products include ozone (O3), carbon oxides (CO3(C 2v, D 3h), CO4, CO5, CO6), D2-water (D2O), and D2-carbonic acid (D2CO3). Species released into the gas phase were sampled via a quadrupole mass spectrometer, and possible minor contributions from D2-formaldehyde (D2CO), D4-methanol (CD3OD), and D2-formic acid (DCOOD) were additionally identified. The feasibility of several reaction networks was investigated by determining their ability to fit the observed temporal column densities of 10 key species that were quantified during the irradiation period. Directly relevant to the CO2-bearing ices of comets, icy satellites in the outer solar system, and the ice caps on Mars, this work illustrates for the first time that D2-water is formed as a product of the exposure of CO2 ices to D+ ions. These findings provide strong support for water formation from oxygen-bearing materials via non-thermal hydrogen atoms, and predict reaction pathways that are likely to be unfolding on the surfaces of asteroids and the Moon.

  13. Ion implantation induced blistering of rutile single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

    2015-07-01

    The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

  14. Ion implantation induced blistering of rutile single crystals

    Science.gov (United States)

    Xiang, Bing-Xi; Jiao, Yang; Guan, Jing; Wang, Lei

    2015-07-01

    The rutile single crystals were implanted by 200 keV He+ ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He+ ion implantation with appropriate fluence and the following thermal annealing.

  15. Plasma protein adsorption onto cell attachment controlled ion implanted collagen

    International Nuclear Information System (INIS)

    Ion implantation into collagen (Type I) coated inner surfaces of test tubes with a length of 50 mm and inner diameter of 2 and 3 mm were performed to develop hybrid type small-diameter artificial vascular grafts. He+ ion implanted collagen coated grafts with a fluence of 1x1014 ions/cm2 replacing femoral arteries exhibited excellent graft patency. To obtain information about the relationship between plasma protein adsorption and antithrombogenicity of ion implanted collagen surfaces, protein adsorption measurements, platelet adhesion test, and animal study were performed. The amount of fibrinogen, fibronectin and albumin showed minimum value at a fluence of 1x1014 ions/cm2. The adsorption of fibrinogen and fibronectin to surfaces is known to promote the adhesion of platelets. The results indicated that antithrombogenicity of He+ ion-implanted collagen with a fluence of 1x1014 ions/cm2 was caused by the reduction of the amount of adsorbed proteins

  16. Surface modification by ion implantation of 304 stainless steel, orthopedic implants

    International Nuclear Information System (INIS)

    In order to improve the wear and corrosion resistance as well as the hardness of 304 stainless steel (S S) from mechanical use, surface treatment derived from those applied in mechanical engineering industries were investigated. Surface characterization according to the different ion implantation showed that corrosion and wear resistances were strongly improved. In same way,microhardness was significantly increased after ion implantation

  17. Structural disorder in ion irradiated carbon materials

    International Nuclear Information System (INIS)

    The effects of ion irradiation on carbon based materials are reviewed laying emphasis on the well known ability of carbon to have different kinds of bonding configuration with the surrounding atoms. It was found that two kinds of bonding configuration of the carbon atoms are allowed in solid amorphous carbon phases. These rearrange the four valence electrons of carbon into sp2 (trigonal bond) and sp3 (tetrahedral bond) hybridizations. Driving the trigonal carbon fraction (x), the physical and chemical nature of solid carbon materials can change in a dramatic way ranging from metallic (x∼100%) to insulating (x∼0%) through semiconductor properties. The amount of the tetrahedral (or trigonal) carbon atoms can be controlled by ion beam irradiation, using suitable conditions and/or introducing foreign species such as hydrogen or silicon by the implantation technique. In hydrogenated amorphous carbon (a-C:H) and hydrogenated amorphous silicon-carbon alloys (a-Si1-xCx:H), the ion beam effects are able to produce stable and reproducible compounds, achieved by tuning the hydrogen (silicon) concentration with well defined equilibrium curves between the trigonal carbon fraction and hydrogen (silicon) content. Raman spectroscopy and temperature dependent conductivity experiments performed on these alloys suggest clustering effects in samples with high carbon content (x∼0.5) due to the strong binding energy of the C-C double bond with respect to C-Si and Si-Si. Several models and theoretical studies such as the 'random covalent network' (RCN) and molecular dynamics calculations have been used to fit the experimental results. It is shown that, while RCN models are highly inaccurate because of the clustering effects, molecular dynamics calculation data are very close to the experimental measured physical properties and confirm the ability of the trigonal carbon to cluster in graphite-like aggregate

  18. n-type chalcogenides by ion implantation.

    Science.gov (United States)

    Hughes, Mark A; Fedorenko, Yanina; Gholipour, Behrad; Yao, Jin; Lee, Tae-Hoon; Gwilliam, Russell M; Homewood, Kevin P; Hinder, Steven; Hewak, Daniel W; Elliott, Stephen R; Curry, Richard J

    2014-01-01

    Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses. PMID:25376988

  19. Defect interaction by dual MeV ion implantation in silicon

    International Nuclear Information System (INIS)

    In this study we conducted experiments to reveal the interactions between different types of ion-induced defects upon annealing in MeV (phosphorous + carbon) implanted silicon. We intentionally tried to overlap the interstitial-rich zone induced by P implantation with the vacancy-rich zone induced by C implantation. Double crystal X-ray diffraction (DCXRD) rocking curve analyses for the samples annealed at 550 deg. C indicated that a positive strain built up at ∼2.3 μm by a single 3 MeV P+ implantation was effectively reduced by ∼50% using dual implantation (3 MeV P++3 MeV C+). However, the amount of strain relaxation in the C implanted layer does not decrease upon annealing

  20. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    CERN Document Server

    Baumann, H; Bilger, G; Jones, D; Symietz, I

    2002-01-01

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (alpha,alpha) backscattering and the resonant nuclear reaction sup 1 H( sup 1 sup 5 N,alpha gamma) sup 1 sup 2 C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of m...

  1. Co-axial ECR plasma system for radioactive ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fortin, M A [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Marion, F [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Stansfield, B [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Paynter, R W [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Sarkar, D [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Sarkissian, A [Plasmionique Inc., 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada); Terreault, B [INRS-EMT (Universite du Quebec), 1650 boul. Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2005-08-01

    A pulsed, co-axial electron cyclotron resonance (ECR, 2.45 GHz) plasma reactor was designed and tested to demonstrate the feasibility of plasma-based radioactive ion implantation ({sup 32}P radioisotope). The geometry of the reactor was designed to produce an efficient implantation of cylindrical implants. Therefore, the reactor is cylindrical in shape, and is equipped with a cylindrical grid in a co-axial geometry. The plasma is created between the wall and the grid; the plasma surrounds the implant, allowing for a radial implantation. A 1 ms microwave pulse creates a plasma in argon, which sputters material from a radioactive cathode. A fraction of the radioisotopes is then ionized, and the ions are implanted into negatively biased metal samples. The plasma was characterized by means of electrostatic probes, giving spatial evaluations of the electron temperature, plasma potential and electron density. Titanium samples were implanted with {sup 32}P during a study that aimed at optimizing the position of the radioactive sputter cathode in the plasma. From an analysis of the distribution of the radioactive fragments, we deduce that the plasma potential has a marked effect on the ion trajectories. In particular, it provides a more uniform implantation distribution than one would otherwise expect. For plasma densities {approx}8 x 10{sup 10} cm{sup -3}, implantation efficiencies as high as 1% are measured; this is about 100 times higher than conventional beam-line ion implantation.

  2. Proton and carbon ion therapy

    CERN Document Server

    Lomax, Tony

    2013-01-01

    Proton and Carbon Ion Therapy is an up-to-date guide to using proton and carbon ion therapy in modern cancer treatment. The book covers the physics and radiobiology basics of proton and ion beams, dosimetry methods and radiation measurements, and treatment delivery systems. It gives practical guidance on patient setup, target localization, and treatment planning for clinical proton and carbon ion therapy. The text also offers detailed reports on the treatment of pediatric cancers, lymphomas, and various other cancers. After an overview, the book focuses on the fundamental aspects of proton and carbon ion therapy equipment, including accelerators, gantries, and delivery systems. It then discusses dosimetry, biology, imaging, and treatment planning basics and provides clinical guidelines on the use of proton and carbon ion therapy for the treatment of specific cancers. Suitable for anyone involved with medical physics and radiation therapy, this book offers a balanced and critical assessment of state-of-the-art...

  3. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A.E.; Tichelaar, F.D.; Verhoeven, J.; Louis, E.; Bijkerk, F.

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being fo

  4. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    International Nuclear Information System (INIS)

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1–10 mm2. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research

  5. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    Science.gov (United States)

    Shin, Chang Seouk; Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Lee, Seung Wook; Won, Mi-Sook

    2016-02-01

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm2. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

  6. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chang Seouk [Busan Center, Korea Basic Science Institute, Busan 609-735 (Korea, Republic of); School of Mechanical Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of); Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Won, Mi-Sook, E-mail: mswon@kbsi.re.kr [Busan Center, Korea Basic Science Institute, Busan 609-735 (Korea, Republic of); Lee, Seung Wook, E-mail: Seunglee@pusan.ac.kr [School of Mechanical Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of)

    2016-02-15

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1–10 mm{sup 2}. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

  7. Comparative study of metal and non-metal ion implantation in polymers: Optical and electrical properties

    International Nuclear Information System (INIS)

    The implantation of 1 MeV metal (63Cu+, 107Ag+, 197Au+) and non-metal (4He+, 12C+) ions in a polycarbonate (PC) matrix has been studied in order to evaluate the role of ion species in the modification of optical and electrical properties of the polymer. When the ion fluence is above ∼1 × 1013 ions cm−2, the threshold for latent tracks overlapping is overcome and π-bonded carbon clusters grow and aggregate forming a network of conjugated C=C bonds. For fluences around 1 × 1017 ions cm−2, the aggregation phenomena induce the formation of amorphous carbon and/or graphite like structures. At the same time, nucleation of metal nanoparticles (NPs) from implanted species can take place when the supersaturation threshold is overcome. The optical absorption of the samples increases in the visible range and the optical band gap redshifts from 3.40 eV up to 0.70 eV mostly due to the carbonization process and the formation of C0x clusters and cluster aggregates. Specific structures in the extinction spectra are observed when metal ions are selected in contrast to the non-metal ion implanted PC, thus revealing the possible presence of noble metal based NPs interstitial to the C0x cluster network. The corresponding electrical resistance decreases much more when metal ions are implanted with at least a factor of 2 orders of magnitude difference than the non-metal ions based samples. An absolute value of ∼107 Ω/sq has been measured for implantation with metals at doses higher than 5 × 1016 ions cm−2, being 1017 Ω/sq the corresponding sheet resistance for pristine PC

  8. A broad chemical and structural characterization of the damaged region of carbon implanted alumina

    International Nuclear Information System (INIS)

    As candidate materials for future thermonuclear fusion reactors, isolating ceramics will be submitted to high energy gamma and neutron radiation fluxes together with an intense particle flux. Amorphization cannot be tolerated in ceramics for fusion applications, due to the associated volume change and the deterioration of mechanical properties. Therefore, a comprehensive study was carried out to examine the effects of carbon beam irradiation on polycrystalline aluminium oxide (Al2O3), a ceramic component of some diagnostic and plasma heating systems. Complementary techniques have allowed a complete chemical and structural surface analysis of the implanted alumina. Implantation with 75 keV, mono-energetic carbon ions at doses of 1 x 1017 and 5 x 1017 ions/cm2 was performed on polished and thermally treated ceramic discs. The alumina targets were kept below 120 deg. C. The structural modifications induced during ion irradiation were studied by the GXRD and TEM techniques. Under these conditions, alumina is readily amorphized by carbon ions, the thickness of the ion-beam induced disordered area increasing with the ion dose. Matrix elements and ion implanted profiles were followed as a function of depth by using ToF-SIMS, indicating the maximum concentration of implanted ions to be in the deeper half of the amorphous region. Ion distribution and chemical modifications caused in the Al2O3 substrate by carbon irradiation were corroborated with XPS. The amount of oxygen in the vicinity of the implanted alumina surface was reduced, suggesting that this element was selectively sputtered during carbon irradiation. The intensity of those peaks referring to Al-O bonds diminishes, while contributions of reduced aluminium and metal carbides are found at the maximum of the carbon distribution. TEM observations on low temperature thermally annealed specimens indicate partial recovery of the initial crystalline structure.

  9. Current capabilities and future needs for semiconductor ion implantation (invited)

    International Nuclear Information System (INIS)

    For many years the largest commercial application for particle accelerators has been semiconductor ion implantation. These tools differ from other accelerators in many respects. In particular they are automated to a very high degree and, in addition to technical performance requirements their success depends on other key metrics including productivity, availability and cost of ownership. These tools also operate with a large variety of species, four orders of magnitude of energy range and five orders of magnitude of dose range. The ion source is a key component of implanters with its own performance metrics that include beam current, lifetime, and materials cost. In this paper, we describe the primary applications for ion implantation and some of the beam line architectures that are used. We describe the ion source that has evolved for this application. Some key future challenges for implanter ion source development are also discussed.

  10. Plasma source ion implantation research at southwestern institute of physics

    International Nuclear Information System (INIS)

    The PSII-EX device and PSII-IM device for research and development of plasma source ion implantation (PSII) technology are described briefly. The functions, main technical specifications and properties of the devices are also discussed. After ion implantation by PSII, the improvements of the surface-mechanical properties (such as microhardness, wear-resistance, friction factor, biological compatibility, etc) for some materials, microanalysis and numerical simulation of modified layers of materials, the technical developments for the practical workpiece treatments and the preliminary experiments for plasma source ion implantation-enhanced deposition are introduced too. As last, the future work about PSII have been proposed

  11. Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

    Science.gov (United States)

    Jeon, Jihoon; Choi, Dukhyun; Kim, Hyungdae; Park, Yong Tae; Choi, Min-Jun; Chung, Kwun-Bum

    2016-04-01

    This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.

  12. Formation of intermetallic surface layers with high intensity ion implantation

    International Nuclear Information System (INIS)

    Full text: Ion implantation is an effective method to produce the intermetallic phases and for improving of surface properties of the construction materials. From the variety of the well-known methods, the high intensity ion implantation is the most attractive one, since it allows us to obtain in the target materials the ion ion-alloyed layers with the thickness several orders greater than the ion projected range. The increase of the thickness of ion-alloyed surface layers at high intensity implantation can be achieved by the means of controlled heating of target by the ion beam, as well as by the saturation of the surface layer by high concentrated ion beam, followed by radiation-stimulated diffusion. Now the task of obtaining of high intensity ion beams is successfully solved not only for the gas ions, but also for the metals ions. The new vacuum-arc beam and plasma flow source 'Raduga-5' has the opportunity to carry out the implantation of the conductive material ions in the high intensity mode. The high intensity ion implantation allows us to form in the surface layer the fine dispersed intermetallic phases in order to improve the wear resistance and the heat resistance of the metallic work pieces. In the present work, titanium was used as a target for ion implantation. Ion implantation of aluminum ions into titanium was carried out using the 'Raduga-5' ion source at the accelerating voltage 20 kV. The surface sputtering was compensated by plasma deposition of ions. The variation of the time of the ion implantation allowed us to change the dose of the implanted aluminium ions. The chemical and phase composition, as well as morphologic structure of the ion-alloyed surface layers were analyzed by the Auger spectroscopy and by the transmission electron microscopy. Additionally, the tests of the tribological and mechanical properties of the implanted materials have been carried out. It was found out that increasing of the dose of aluminum ions from 2.2·1017 up to

  13. Corrosion resistance behavior of nitrogen ion-implanted in tantalum

    Science.gov (United States)

    Ramezani, Amir Hoshang; Hantehezadeh, Mohammad Reza; Ghoranneviss, Mahmood; Darabi, Elham

    2016-03-01

    This paper investigates the effect of nitrogen ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, nitrogen ions which had energy of 30 keV and were in doses of 1 × 1017 to 9 × 1017 ions/cm2 were used. The X-ray diffraction analysis was applied for both the metallic analysis and the study of new structures having been created through the nitrogen ion implantation. Atomic force microscopy was also used to check the roughness variations prior to and also after the implantation phase. Moreover, the corrosion analysis apparatus was applied in order to compare resistance against tantalum corrosion in advance to and after the ion implantation. The results indicate that nitrogen ion implantation has a significant impact on increasing resistance against tantalum corrosion. After the corrosion test, the surface morphology of samples was analyzed by scanning electron microscopy. Also, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this article is to obtain the perfect condition of the formation of tantalum corrosion resistance. The corrosion potential curves and roughness values obviously indicate that corrosion potential variations caused by the different doses of nitrogen ion bombardment are proportional to surface roughness in an inverse manner. The EDX analysis demonstrates the existence of the elemental composition of nitrogen ion implantation in the samples.

  14. Modification of medical metals by ion implantation of copper

    Science.gov (United States)

    Wan, Y. Z.; Xiong, G. Y.; Liang, H.; Raman, S.; He, F.; Huang, Y.

    2007-10-01

    The effect of copper ion implantation on the antibacterial activity, wear performance and corrosion resistance of medical metals including 317 L of stainless steels, pure titanium, and Ti-Al-Nb alloy was studied in this work. The specimens were implanted with copper ions using a MEVVA source ion implanter with ion doses ranging from 0.5 × 10 17 to 4 × 10 17 ions/cm 2 at an energy of 80 keV. The antibacterial effect, wear rate, and inflexion potential were measured as a function of ion dose. The results obtained indicate that copper ion implantation improves the antibacterial effect and wear behaviour for all the three medical materials studied. However, corrosion resistance decreases after ion implantation of copper. Experimental results indicate that the antibacterial property and corrosion resistance should be balanced for medical titanium materials. The marked deteriorated corrosion resistance of 317 L suggests that copper implantation may not be an effective method of improving its antibacterial activity.

  15. Cytological effect of nitrogen ion implantation into Stevia

    International Nuclear Information System (INIS)

    Dry seeds of Stevia were implanted by 35∼150 keV nitrogen ion with various doses. The cytological effect on M1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with the increased with the increase of ion beam energy and dose. However, there was no significant linear regression relationship between ion dose and aberration rate. The cytological effect of nitrogen ion implantation was lower than that of γ-rays

  16. Investigation of corrosion and ion release from titanium dental implant

    International Nuclear Information System (INIS)

    A thin passive titanium dioxide, in its stoichiometric form, has a very high corrosion resistance, but the same conclusion can not be made on corrosion resistance of a surface which is not stoichiometrically titanium dioxide, or even a surface which is a composition of various elements and oxides. In practice, the implants available on the market have an oxide surface contaminated with other elements. The aim of this paper is to correlate clinical observations that show the deterioration of Ti made implants after certain period of insertion in the patients, and in vitro corrosion resistance of Ti implants with surface passive oxide layer. For this purpose, surface analysis of the retrieved failed implants were performed and in vivo animal experiments with relation to ion release from implants were done. Finally, on the basis of the clinical observation, in vivo animal test, and in vitro electrochemical corrosion test, a model is proposed to explain the corrosion and ion release from the Ti implant. (author)

  17. Bacterial adhesion on ion-implanted stainless steel surfaces

    International Nuclear Information System (INIS)

    Stainless steel disks were implanted with N+, O+ and SiF3+, respectively at the Surrey Ion Beam Centre. The surface properties of the implanted surfaces were analyzed, including surface chemical composition, surface topography, surface roughness and surface free energy. Bacterial adhesion of Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus, which frequently cause medical device-associated infections was evaluated under static condition and laminar flow condition. The effect of contact time, growth media and surface properties of the ion-implanted steels on bacterial adhesion was investigated. The experimental results showed that SiF3+-implanted stainless steel performed much better than N+-implanted steel, O+-implanted steel and untreated stainless steel control on reducing bacterial attachment under identical experimental conditions

  18. Bacterial adhesion on ion-implanted stainless steel surfaces

    Science.gov (United States)

    Zhao, Q.; Liu, Y.; Wang, C.; Wang, S.; Peng, N.; Jeynes, C.

    2007-08-01

    Stainless steel disks were implanted with N +, O + and SiF 3+, respectively at the Surrey Ion Beam Centre. The surface properties of the implanted surfaces were analyzed, including surface chemical composition, surface topography, surface roughness and surface free energy. Bacterial adhesion of Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus, which frequently cause medical device-associated infections was evaluated under static condition and laminar flow condition. The effect of contact time, growth media and surface properties of the ion-implanted steels on bacterial adhesion was investigated. The experimental results showed that SiF 3+-implanted stainless steel performed much better than N +-implanted steel, O +-implanted steel and untreated stainless steel control on reducing bacterial attachment under identical experimental conditions.

  19. Effects ofMeV ion implantation on metal films

    International Nuclear Information System (INIS)

    Au films on optically flat Pyrex glasses or MgO single crystals were implanted with Si, Ni and Au ions with ion energies from 0.75 to 3MeV and doses from of 5x1013 to 5x1016ionscm-2. The changes of their surfaces were investigated from measurements of the surface profiles and light reflection and/or scattering, and from observations by scanning electron microscopy (SEM). After ion implantation the surface showed a depression. The depression increased with increasing dose and mass of implanted ions. The ion-implanted surface became smoother than that of the as-deposited one. The intensity of light scattering was decreased and a metallic brilliance was observed after the implantation. The depression and the morphology changes were caused by sputtering and grain growth. In the SEM observations, the implanted regions were contrasted with as-deposited regions as blacker in secondary electron images and as whiter in composition images of reflected electrons. The impurity level of the films appeared to diminish after the ion implantation. ((orig.))

  20. Ion implantation induced nanotopography on titanium and bone cell adhesion

    Science.gov (United States)

    Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; de Maeztu, Miguel Ángel

    2014-08-01

    Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40-80 keV), fluence (1-2 e17 ion/cm2) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted surfaces, without surface chemistry modification, are in the same range and that such modifications, in certain conditions, do have a statistically significant effect on bone tissue forming cell adhesion.

  1. Development of vertical compact ion implanter for gemstones applications

    International Nuclear Information System (INIS)

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented

  2. Development of vertical compact ion implanter for gemstones applications

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science (Gems and Jewelry), Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-08-15

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  3. Development of vertical compact ion implanter for gemstones applications

    Science.gov (United States)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  4. Modifications of the hydriding kinetics of a metallic surface, using ion implantation

    International Nuclear Information System (INIS)

    Uranium reacts with hydrogen to form an hydride: this reaction leads to the total destruction of the material. To modify the reactivity of an uranium surface towards hydrogen, ion implantation was selected, among surface treatments techniques. Four elements (carbon, nitrogen, oxygen, sulfur) were implanted to different doses. The results show a modification of the hydriding mechanism and a significant increase in the reaction induction times, notably at high implantation doses. Several techniques (SIMS, X-rays phases analysis and residual stresses determination) were used to characterize the samples and understand the different mechanisms involved

  5. Investigations on the characterization of ion implanted hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2013-07-01

    The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 × 1014-1 × 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

  6. Self-diffusion of ion-implanted tracers

    International Nuclear Information System (INIS)

    Tracer self-diffusion studies with ion-implanted stable isotopes require a high fluence of implanted ions (>1015 ions/cm2) due to the natural tracer background concentration present in a sample. Such a high fluence leads to considerable implantation damage, where a large part of the tracer is immobilized and does not take place in the diffusion process. As a consequence, diffusion profiles are observed which cannot be described with Fick's second law. In this study, a set of differential equations is presented, describing the diffusion of implanted isotopes as a trap-limited process with a sink and a source term, where the tracer atoms form immobile complexes with implantation damage-induced defects. These equations are solved numerically for the example of nitrogen diffusion in amorphous Si-B-C-N ceramics in order to illustrate diffusivity determination. The results are compared to the analytical solution of Fick's second law

  7. Rolling contact fatigue life of ion-implanted GCr15

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Presents an experimental research into the rooling contact fatigue life of GCr15 steel with Tix N, TiX N + Ag and Tix N + DLC layers ion-implanted using the plasma ion-implantation technology on a ball-rod style high-speed con tact fatigue tester, and concludes with test results that the fatigue life increases to varying degrees with Tix N, Tix N + Ag, and Tix N + DLC layers implanted, and increases 1.8 times with Tix N + Ag layer implanted, hairline cracks grow continuously into fatigue pits under the action of shear stress in the superficial layer of material, and ion-implantation acts to prevent initiation of cracks and slow down propagation of cracks.

  8. Effect of ion current density on damage in Al ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Battistig, G. E-mail: battisti@mfa.kfki.hu; Garcia Lopez, J.; Morilla, Y.; Khanh, N.Q.; Lohner, T.; Petrik, P.; Ramos, A.R

    2004-06-01

    The damage created by implantation of Al ions into single crystalline 4H-SiC has been analyzed using a combination of ion beam techniques and spectroscopic ellipsometry. The samples were implanted at room temperature with 150 keV Al{sup +} ions in the fluence range of 4 x 10{sup 14} cm{sup -2} to 2 x 10{sup 15} cm{sup -2} with current densities of 0.4 and 2.5 {mu}A cm{sup -2}. In order to study simultaneously the depth distribution of the disorder produced in both the carbon and silicon sublattice, we used 3.5 MeV He beam in channeling geometry. In this condition the cross-section for carbon is enhanced by a factor of {approx}6. The structural recovery of the samples after a further high temperature annealing has been studied. These results have been compared with the optical properties of the samples measured by spectroscopic ellipsometry.

  9. Microhardness tests of stainless steel 52100 implanted with nitrogen and carbon dioxide

    CERN Document Server

    Mardanian, M; Taheri, Z

    2003-01-01

    In this research work, samples of stainless steel 52100 disks were implanted with nitrogen and carbon dioxide ions at the energy of 90 keV. Microhardness measurement were performed to determine the hardness of the surface. The N-2 sup + implanted steels at the doses of 1x10 sup 1 8 ions cm sup sub 2 gave the highest hardness of 49.70%, while for the CO sub 2 sup + ions implantation, the hardness of 17% and 5% were obtained at the doses of 3x10 sup 1 8 and 1x10 sup 1 9 ions cm sup - 2, respectively. To support the interpretation of our microhardness results the implanted surface were analyzed by the use of XRD method. Our results indicated that the hardness of the N sub 2 sup + implanted samples are due to formation of beta-Cr N phase in the surface layer, while in the CO sub 2 + implanted samples no observation of carbon as graphite or carbide was made. In addition, the absence of any hump in the XRD spectrum indicating that carbon is not in the amorphous phase either.

  10. Software for goniometer control in the Triple Ion Implantation Facility

    Energy Technology Data Exchange (ETDEWEB)

    Allen, W.R.

    1994-02-01

    A computer program is described tat controls the goniometer employed in the ion scattering chamber of the Triple Ion Implantation Facility (TIF) in the Metals and Ceramics Division at Oak Ridge National Laboratory. Details of goniometer operation and its incorporation into the ion scattering setup specific to the TIF are also discussed.

  11. Improvement of tribological properties of titanium alloys by ion implantation

    International Nuclear Information System (INIS)

    Influence of implantation regimes on mechanical and tribotechnical properties of surface layer of VT6 titanium alloy were studied. Interrupted beams Cu+ ions with 15 Hz frequency and 60 keV energy were used for implantation. After implantation of VT6 alloy samples the wearability rate of the polymer sample decreases almost by 3 times and the friction coefficient by 1.5 times

  12. Channel waveguides formed by ion implantation of PECVD grown silica

    International Nuclear Information System (INIS)

    Low loss channel waveguides have been formed in silica-on-silicon by implantation with 5 MeV Si and Ge ions. In these experiments, the substrate was comprised of an undoped layer of silica (30 μm thick) which was grown by plasma enhanced chemical vapour deposition (PECVD). The optical loss characteristics of the waveguides, as measured at both λ 1300 and 1550 nm, were independent of the implanted ion species. A minimum in the attenuation loss (α) of ∼0.10-0.20 dB/cm was obtained following both a pre-implant (1050oC) and a post-implant (400-500oC) anneal of the waveguides. The ability to produce a minimum in α by pre-implant annealing has been attributed to the thermally induced relaxation of the densified structure in the as-grown layer. Only a comparatively small degree of compaction was measured for Si-implanted samples which did not receive a pre-implant anneal. In contrast, the much larger degree of compaction in the pre-implant annealed samples was similar in magnitiude to that observed in fused silica. These are the first reported examples of ion-implanted waveguides using a substrate of silica grown by PECVD. (author)

  13. Ion implantation induced nanotopography on titanium and bone cell adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

    2014-08-15

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  14. Ion implantation induced nanotopography on titanium and bone cell adhesion

    International Nuclear Information System (INIS)

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm2) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  15. Caborane beam from ITEP Bernas ion source for semiconductor implanters

    Energy Technology Data Exchange (ETDEWEB)

    Seleznev, D.; Hershcovitch, A.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Koshelev, V.; Kulevoy, T.; Jonson, B.; Poole, J.; Alexeyenko, O.; Gurkova, E.; Oks, E.; Gushenets, V.; Polozov, S.; Masunov, E.

    2010-02-01

    A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C{sub 2}B{sub 10}H{sub 12}) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

  16. Industrial applications of ion implantation into metal surfaces

    International Nuclear Information System (INIS)

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry

  17. Industrial applications of ion implantation into metal surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Williams, J.M.

    1987-07-01

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry.

  18. Structural, electrical and catalytic properties of ion-implanted oxides

    OpenAIRE

    Hassel, van, E Edwin; Burggraaf, A.J.

    1989-01-01

    The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.

  19. Electrical and structural characterization of ion implanted GaN

    International Nuclear Information System (INIS)

    Ion implantation induced defects and their consequent electrical impact have been investigated. Unintentionally doped n-type gallium nitride was implanted with 100 keV Si+ and 300 keV Ar+ ions in a fluence range of 1014-1015 ions/cm2. The samples were characterized with Rutherford backscattering/Channeling method for damage buildup. Time of flight elastic recoil detection analysis was implied on the Si implanted samples to see the ion depth distribution. Ar implanted GaN samples were studied electrically with scanning spreading resistance microscopy. Our results show that an Ar fluence of 5 x 1014 cm-2 increases the resistance by five orders of magnitude to a maximum value. For the highest fluence, 6 x 1015 cm-2, the resistivity decreases by two orders of magnitude.

  20. Ion-implanted GaAs slow wave monolithic structure

    International Nuclear Information System (INIS)

    The use of MeV ion-implantation for realization of a GaAs monolithically compatible device is demonstrated. Ion implants up to 6 MeV in energy are used employing Si and S atoms. The fabricated device is an electromagnetic slow wave microstrip-like structure designed for performance into the millimeter wave regime. Phase shift theta and insertion loss L measurements are performed for frequencies 2-18 GHz at room temperature. Comparison of the experimental ion-implanted device results to epitaxial device results indicates comparable electrical performance, with no more than a 30% reduction in theta but with an improvement in loss behavior, namely a L reduction up to 40%. These theta and L differences between the ion-implanted and epitaxial devices are attributed to differences in doping profiles. Theoretical modelling of theta characteristics produces agreement with experimental data to within a few percent. (author)

  1. Low energy negative ion implanter facility at IUAC, New Delhi

    International Nuclear Information System (INIS)

    A low energy negative ion implanter facility had been developed at IUAC. The typical ion energies of this facility are in the range of 30 KeV to 200 KeV. It is capable of delivering ion species having masses 1H to 197Au. The facility is equipped with a sputter base negative ion source namely MC- SNICS (multi cathode -source of negative ion by cesium sputtering) placed on a high voltage platform (200 kV) for generating negative ion beams. The beam line essentially consists of a negative ion source, an accelerating column, focusing devices such as electrostatic quadruple triplets, an analyzer magnet for selecting the particular ion beam as well as transporting in a particular direction and finally, an ion implantation chamber. The analyzer magnet has a maximum rigidity, R =mE/Z2 of 34 (where m- mass in a.m.u., E- energy in MeV, Z- charge state) thereby, it restricts the energies of the higher mass ions at 150 keV. The ion beam optics for this facility was calculated using GIOS and GICOSY software codes. The control system used for its operation is indigenously developed. The optimized or minimum ion beam spot size obtained is 5 mm x 5 mm (but, variable with ion energy and mass). An electrostatic scanner placed in front of the implantation chamber allows a uniform ion implantation on the samples of sizes up to 15 mm x 15 mm. The facility is in regular operation for ion implantation purposes especially for material science experiments. (author)

  2. Effects of N + B ion implantation on the tribological behaviour of GCr15 bearing steel

    International Nuclear Information System (INIS)

    The ion implantation of N + B (3.1 x 1017 N ions cm-2 at 90 keV followed by 3.2 x 1017 B ions cm-2 at 90 keV) into GCr15 bearing steel was carried out. The phase structure and the distribution and binding energy of elements in the implanted layer were investigated using X-ray diffraction. Auger electron spectroscopy and X-ray photoelectron spectroscopy. The dry sliding friction and wear behaviour of the implanted layer and GCr15 bearing steel substrate was also examined in detail using a friction and wear machine. It is found that a surface layer with a lower friction coefficient and a higher wear resistance than the substrate was obtained by implanting N + B into GCr15 bearing steel. Because of dispersion strengthening of the hexagonal BN phase and ε-Fe2N-Fe3N phase and solid solution strengthening of B atoms, the surface hardness of the implanted layer is increased. As a result of the increased hardness and the existence of a graphite-like carbon film on the surface of the implanted layer, the antiadhesive and antiabrasive properties of the implanted layer were considerably enhanced. The friction coefficient was reduced from 0.60 to 0.20 and the wear resistance was also greatly improved. (orig.)

  3. Ion implantation of titanium alloys for improved fretting resistance

    International Nuclear Information System (INIS)

    Fretting is a major problem with titanium alloy aerospace components. A fretting apparatus was designed to generate low amplitude motions for testing of various flat and cylindrical geometries. Using it, ion-implanted coupons of Ti-6Al-4V and Ti-Al alloys were compared for fretting performance against untreated specimens. Surface profilometry was used as the primary method of analytical evaluation. The ion implantation treatment provided improvements in fretting reduction. (orig.)

  4. Electrochemical investigation of ion implanted p-Si

    OpenAIRE

    Spiegel, Adrian; Schmuki, Patrick

    2005-01-01

    The present work investigates the possibility of selective electrochemical metal deposition on ion implanted p-Si. The idea is that defects introduced into the substrate by ion implantation make it more susceptible to electrochemical reactions compared to intact Si; this increased sensitivity is to be used for selective reactions at the defect sites. It is believed that the increased reactivity is due to a lowering of the Schottky barrier breakdown potential, Ubd, of the semiconductor-electro...

  5. Electrochemical investigation of ion implanted p-Si

    OpenAIRE

    Spiegel, Adrian

    2003-01-01

    The present work investigates the possibility of selective electrochemical metal deposition on ion implanted p-Si. The idea is that defects introduced into the substrate by ion implantation make it more susceptible to electrochemical reactions compared to intact Si; this increased sensitivity is to be used for selective reactions at the defect sites. It is believed that the increased reactivity is due to a lowering of the Schottky barrier breakdown potential, Ubd, of the semiconductor-electro...

  6. On influence of irradiation by carbon ions on tantalum structure

    International Nuclear Information System (INIS)

    Data of experimental studies on tantalum surface structure change and it microhardness in the result of carbon ion implantation are presented. The tantalum samples with purity 99.96 % having cylindrical shape (height 55 mm and diameter 4.5-5 mm) after polish were irradiated by carbon ions with energy 60 keV in the range 5·1016-5·1018 cm-2 at the DIANA facility. The microhardness measurement has been conducted on the PMT-3 device on the irradiated surface and along samples cross section. The microstructure has been examined on the NEOFOT-21 optical microscope, and phase-structural transformations were studied on the 3.0 DRON X-ray diffractometer with application of CuKα radiation. It is determined, that under carbon ion implantation into tantalum surface layers the texture tantalum carbide phases and tantalum monocarbide arise. Post-radiation thermal annealing leads to tantalum monocarbide decay and tantalum carbide particle sizes increase. It is determined, that phases got under C+ implantation have introduction phase structure with dense atom packing. Ion doping leads to tantalum surface hardening. Hardening rate depends on the irradiation fluence. Maximal hardening has been observed on the surface, the maximal microhardness increase extension along whole samples thickness. Due to carbon ions implantation the microhardness is increasing in 3 times near surface, and up to 1.5-3 times over samples thickness

  7. Surface bioactivity of plasma implanted silicon and amorphous carbon

    Institute of Scientific and Technical Information of China (English)

    Paul K CHU

    2004-01-01

    Plasma immersion ion implantation and deposition (PⅢ&D) has been shown to be an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification single-crystal silicon and amorphous carbon is reviewed. Silicon is the most important material in the integrated circuit industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PⅢ into silicon and observed the biomimetic growth of apatite on its surface in simulated body fluid. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness. The use of this material in biomedical engineering has also attracted much attention. It has been observed in our laboratory that doping DLC with nitrogen by means of PⅢ can improve the surface blood compatibility. The properties as well as in vitro biological test results will be discussed in this article.

  8. Surface modification of silicone rubber by ion implantation

    International Nuclear Information System (INIS)

    A study has been made on the wettability, structure, and chemical states of ion implanted silicone rubbers. C+, N2+, O2+, and Ar+ ion implantations were performed at energies of 50 and 100 keV at room temperature. The fluences ranged from 1012 to 1017 ions/cm2. Ion implantation caused the surface roughness to increase 2-3 times. Wettability was estimated by means of the sessile drop method using water, of which the results showed that the contact angle of water decreased from 98.90 to 480 as the fluence increased. The results of XPS measurements showed that implanted elements formed a Gaussian-like distribution, host elements were redistributed and no change in binding energies of O1s, C1s and Si2p occurred. Results of FT-IR-ATR showed that ion implantation broke up original chemical bonds to form new radicals, the amounts of which are related to the fluences. It is concluded that the change in wettability may be caused by formation of new radicals rather than roughening of the surface under ion implantation. (orig.)

  9. Surface modification of silicone rubber by ion implantation

    International Nuclear Information System (INIS)

    A study has been made on the wettability, structure, and chemical states of ion implanted silicone rubber. C+-, N2+-, O2+, and Ar+ ion implantations were performed at energies of 50, 100, and 150 keV at room temperature. The doses ranged from 1 x 1012 to 1 x 1017 ions/cm2. Ion implantation caused the surface roughness to increase by 1∼5 times. Wettability was estimated by means of a sessile drop method using water. The contact angle of water immediately after ion-implantation decreased from 98.8deg to 48deg, as the dose increased. As the time elapsed, the contact angle gradually increased to approach the initial angle value. The results of XPS measurements showed that implanted elements formed a Gaussian-like distribution. The results of FT-IR-ATR showed that ion implantation broke original chemical bonds to form new radicals. The amounts of these radicals are related to the doses. Changes in wettability are mainly caused by formation of new radicals and their aging effects. (author)

  10. Experiments and Theory of Ablation Plasma Ion Implantation

    Science.gov (United States)

    Gilgenbach, R. M.; Qi, B.; Lau, Y. Y.; Johnston, M. D.; Doll, G. L.; Lazarides, A.

    2000-10-01

    Research is underway to accelerate laser ablation plume ions for implantation into substrates. Ablation plasma ion implantation (APII) biases the deposition substrate to a large negative voltage. APII has the advantages of direct acceleration and implantation of ions from metals or any other solid targets. This process is environmentally friendly because it avoids the use of toxic gaseous precursors. Initial experiments are directed towards the implantation of iron ions into silicon substrates at negative voltages from 2-10 kV. A KrF laser ablates iron targets at pulse energies up to 600 mJ and typical repetition rates of 10 Hz. Parameters which can be varied include laser fluence, relative timing of laser and high voltage pulse, and target-to-substrate distance. Spectroscopic diagnostics yield Fe plasma plume electron temperatures up to about 10 eV. Analysis of films will compare surface morphology, hardness and adhesion between deposited Vs accelerated-implanted plumes. A simple one dimensional theory is developed [1] to calculate the implanted ion current, extracted from the ion matrix sheath, as a function of time for various substrate-plume separations. This model accurately recovers Lieberman's classic results when the plume front is initially in contact with the substrate. [1] B. Qi, Y. Y. Lau, and R. M. Gilgenbach, Appl. Phys. Lett. (to be published). * This research is supported by the National Science Foundation.

  11. X-ray photoelectron study of Si{sup +} ion implanted polymers

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T; Balabanov, S; Bischoff, L; Krastev, V; Stefanov, P; Avramova, I, E-mail: tania_tsvetkova@yahoo.co.u

    2010-11-01

    X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si{sup +} ions (E=30 keV, D= 1.10{sup 17} cm{sup -2}). Two kinds of polymers were studied - ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si{sup +} ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements - Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.

  12. Nitrogen ion implantation effect on friction coefficient of tool steel

    International Nuclear Information System (INIS)

    Effect of nitrogen molecular ion implantation into KhVSG steel on the friction coefficient in the air and vacuum is investigated. Irradiation is carried out by the N2+ beam with energy 120 keV and flux density 5 μ/cm2 at room temperature in vacuum 5x10-4Pa. The integral dose of irradiation is 1017 particle/cm2. Nitrogen ion implantation is shown to provide the formation of the modified layer changing friction properties of steel. The friction coefficient can either increase or decrease depending on implantation and test conditions. 4 refs.; 2 figs

  13. Nanocavities induced by neon Plasma Based Ion Implantation in silicon

    International Nuclear Information System (INIS)

    Nanocavities formed by neon Plasma Based Ion Implantation (PBII) in Si have been studied in comparison with conventional ion implantation (CI). Interstitial-type defects are also investigated. To avoid amorphisation, neon implantations were performed at 250 deg. C with a fluence of ∼5 x 1016 cm-2. Using PBII a rather uniform layer of cavities is observed from the surface while a three layer structure is present using the CI. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. After annealing at 800 deg. C, bubbles grow and extended defects identified as {1 1 3} defects are formed

  14. Metastable phases produced by ion implantation in metals

    International Nuclear Information System (INIS)

    Experimental evidence for the formation of metastable phases in metals using ion implantation is reviewed. Ion channeling and transmission electron microscopy are the main experimental techniques which have been used to investigate these materials. For heavy metallic implanted species at low implanted concentrations (less than or equal to 1 at. percent), the materials are generally substitutional solid solutions, often exceeding equilibrium solid solubilities. At higher concentrations both metastable solid solutions and amorphous structures can be produced. Examples from the Ag : Cu, Ta : Cu, Dy : Ni, and Au : Pt systems are shown to illustrate specific points. A thermal spike-type mechanism has been proposed to explain these behaviors

  15. Metastable phases produced by ion implantation in metals

    Energy Technology Data Exchange (ETDEWEB)

    Borders, J.A.

    1977-01-01

    Experimental evidence for the formation of metastable phases in metals using ion implantation is reviewed. Ion channeling and transmission electron microscopy are the main experimental techniques which have been used to investigate these materials. For heavy metallic implanted species at low implanted concentrations (less than or equal to 1 at. percent), the materials are generally substitutional solid solutions, often exceeding equilibrium solid solubilities. At higher concentrations both metastable solid solutions and amorphous structures can be produced. Examples from the Ag : Cu, Ta : Cu, Dy : Ni, and Au : Pt systems are shown to illustrate specific points. A thermal spike-type mechanism has been proposed to explain these behaviors.

  16. The Mechanical and Tribological Properties or Ion Implanted Ceramics

    OpenAIRE

    Bull, Stephen John

    1988-01-01

    The mechanical properties of ion implanted ceramics are primarily a function of the radiation damage produced by the implantation process. For crystalline ceramics this damage is chiefly nuclear displacements, though for glasses electronic effects have also been observed. In this study a number of single crystal and polycrystalline ceramics and a soda-lime-silica glass have been implanted with a range of ions in the energy range 90keV to 400keV and the changes in mechanical properties prod...

  17. Characterization of ion implanted silicon by the electrolytic reverse current

    International Nuclear Information System (INIS)

    The current voltage behaviour of ion implanted silicon electrodes in HF electrolyte is investigated. The electrolytic reverse current, i.e. the reaction rate of the minority carrier limited reactions is found to increase. The current increase depends on the implanted dose and layer stripping. Reason for the increased reverse current can be referred to radiation damage acting as generation centres for minority carriers. Measurement of the electrolytic reverse current can be used for determining damage profiles. Layer stripping is carried out by anodic dissolution in the same electrolyte. The sensitivity of this new method for characterizing ion implanted silicon layers lies at 1011 to 1012 atoms/cm2. (author)

  18. High-Tc SQUIDs fabricated by inhibiting ion implantation

    International Nuclear Information System (INIS)

    We have fabricated YBaCuO superconducting quantum interference devices (SQUIDs) using an inhibiting ion implantation method. The devices were patterned by implanting silicon or boron ions through photoresist masks to locally inhibit the conductivity. The implantation was performed at energies of 40-120 keV and doses of 1015-1016 cm-2. The DC SQUIDs consist of step-edge junctions on SrTiO3 substrates. Operational SQUIDs fabricated with this new patterning method were demonstrated at 77 K. Line widths of 2 μm have been achieved and sharp superconducting-normal boundaries were observed. The surface of the patterned device remained planar. (author)

  19. Synthesis of Ti:sapphire by ion implantation

    International Nuclear Information System (INIS)

    We have investigated the possibility of forming Ti:sapphire by co-implanting c-axis oriented α-Al2O3 wafers with Ti and O ions and have found suitable implantation and annealing conditions which lead to a substantial increase in the fraction of Ti ions stabilised in the optically active 3+ oxidation state required for laser-action. Following thermal annealing, Al2O3 samples co-implanted with Ti and O exhibit strong luminescence in the wavelength range 600-900 nm due to the presence of Ti3+. We believe this may provide a pathway for fabricating a Ti:Al2O3 laser in a waveguide geometry. In this paper, details of the implantation and annealing schedule and results of photoluminescence measurements on the implanted wafers are presented

  20. X-ray irradiation of ion-implanted MOS capacitors

    International Nuclear Information System (INIS)

    He+ ion-implanted metal-oxide-semiconductor (MOS) capacitors with two different oxide thickness have been irradiated by X-rays and the depth distribution of the implant damage in the Si-SiO2 structures have been examined. The efficiency of X-ray annealing of electronic traps caused by implantation and changes in charge populations are reported. The experiment shows that (in the case when defects introduced by implantation are located at the Si-SiO2 interface) only defects corresponding to the deep levels in the Si can be affected by X-ray irradiation. When defects introduced by ion implantation are located deeper within the Si substrate complete annealing of these defects is observed

  1. Statistical 3D damage accumulation model for ion implant simulators

    CERN Document Server

    Hernandez-Mangas, J M; Enriquez, L E; Bailon, L; Barbolla, J; Jaraiz, M

    2003-01-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  2. TEM study of amorphous alloys produced by ion implantation

    International Nuclear Information System (INIS)

    Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy+ and P+ ions at doses between 1013 - 1017 ions/cm2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

  3. Ion implantation facility for precision doping of semiconductor devices

    International Nuclear Information System (INIS)

    Full text: We have developed an ion implantation system for application to: the nano-fabrication of p-type and n-type silicon devices; the fabrication of silicon nano-resistors; single phosphorus doping of silicon-based quantum computer devices; the doping of diamond-based devices; the study of ion beam physics of low energy ion interactions with solids. The system reliably delivers a wide range of ion spices, including B+, Te+, P+, C+, N+ and H+ with an energy up to 15 keV. The ion implanter operates in the mode of beam-on-demand control triggered by signals from the substrate and the beam current is adjustable in a wide range from ∼mA to a few ions per-second. The beam purity of each ion species is routinely monitored and analysed using micro-ERDA/PIXE/RBS. Copyright (2005) Australian Institute of Physics

  4. Enhanced Physicochemical and Biological Properties of Ion-Implanted Titanium Using Electron Cyclotron Resonance Ion Sources

    Directory of Open Access Journals (Sweden)

    Csaba Hegedűs

    2016-01-01

    Full Text Available The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have developed a Ti implant modified with Ca or dual Ca + Si ions on the surface using an electron cyclotron resonance ion source (ECRIS. The physicochemical and biological properties of ion-implanted Ti surfaces were analyzed using various analytical techniques, such as surface analyses, potentiodynamic polarization and cell culture. Experimental results indicated that a rough morphology was observed on the Ti substrate surface modified by ECRIS plasma ions. The in vitro electrochemical measurement results also indicated that the Ca + Si ion-implanted surface had a more beneficial and desired behavior than the pristine Ti substrate. Compared to the pristine Ti substrate, all ion-implanted samples had a lower hemolysis ratio. MG63 cells cultured on the high Ca and dual Ca + Si ion-implanted surfaces revealed significantly greater cell viability in comparison to the pristine Ti substrate. In conclusion, surface modification by electron cyclotron resonance Ca and Si ion sources could be an effective method for Ti implants.

  5. Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbon

    Energy Technology Data Exchange (ETDEWEB)

    Gennaro, S. [ITC-irst, Istituto Trentino di Cultura, Centro per la Ricerca Scientifica e Tecnologica, Via Sommarive 18, 38050 Povo, Trento (Italy)]. E-mail: gennaro@itc.it; Barozzi, M. [ITC-irst, Istituto Trentino di Cultura, Centro per la Ricerca Scientifica e Tecnologica, Via Sommarive 18, 38050 Povo, Trento (Italy); Bersani, M. [ITC-irst, Istituto Trentino di Cultura, Centro per la Ricerca Scientifica e Tecnologica, Via Sommarive 18, 38050 Povo, Trento (Italy); Sealy, B.J. [Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, GU2 7XH Guildford, Surrey (United Kingdom); Gwilliam, R. [Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, GU2 7XH Guildford, Surrey (United Kingdom)

    2005-08-01

    We investigate the effect of the pre-amorphisation damage on the structural properties, and dopant diffusion behaviour of indium and carbon co-implanted layers in silicon. Ion implantation of indium and carbon in silicon was used to produce co-implanted specimens. Rutherford Backscattering Spectroscopy and Secondary Ion Mass Spectroscopy have been performed on as-implanted and annealed samples to assess in detail the structural properties of the doped layers and the diffusion behaviour. The results have been compared with data obtained for similar implants performed into crystalline silicon to achieve a deeper understanding of the mechanisms driving the diffusion of the indium in silicon in presence of co-implanted species. In particular a reduction of the indium diffusion and a saturation level for the indium substitutional retained dose were observed.

  6. Amorphization effects on pure titanium using C+, O+ and Cr+ ion implantation

    International Nuclear Information System (INIS)

    In this work, the influence of the amorphization effect of C+, O+ and Cr+ implantation on the friction and wettability properties of pure titanium (grade 2) has been studied. Doses from 1 x 1017 to 5 x 1017 ions cm-2 at multiple energies of 50 to 190 keV have been used. Additionally, pin-on-disk tribological tests using Ultra-High-Molecular-Weight-Polyethylene (UHMWPE) pins under lubricated conditions and wettability measurements of implanted and unimplanted titanium samples were carried out. The authors found, that the more suitable material for the wettability and hence wear resistance is C+ implanted titanium, because of its higher surface energy than the unimplanted titanium corresponding energy. Friction tests on monoenergetic 180 keV C+ and O+ modified titanium with 1 x 1017 ions cm-2 have showed an essentially reduced friction compared to samples implanted with the same dose but at multiple energies. A reduction of the wettability by about 7% and the friction coefficient by about 18% was observed for carbon implanted titanium with a dose of 1 x 1017 C+ cm-2; this effect corresponds to a good correlation between wettability and friction coefficient after C+ implantation in titanium. It was concluded that the reduction of the friction coefficient with monoenergetic C+ implanted titanium is 3.7 times lower compared with those of pure titanium

  7. Surface modification of austenitic stainless steel by titanium ion implantation

    International Nuclear Information System (INIS)

    The wear properties of AISI 316 austenitic stainless steel implanted with Ti were investigated for ion doses in the range (2.3-5.4)x1016ionscm-2 and average ion energies of 60 and 90keV. The implanted layer was examined by Rutherford backscattering, from which the retained doses were determined, and glow discharge optical emission spectroscopy. Following implantation, the surface microhardness was observed to increase with the greatest change occurring at higher ion energy. Pin-on-disc wear tests and associated friction measurements were also performed under both dry and lubricated conditions using applied loads of 2N and 10N. In the absence of lubrication, breakthrough of the implanted layer occurred after a short sliding time; only for a dose of 5.1x1016ionscm-2 implanted at an average energy of 90keV was the onset of breakthrough appreciably delayed. In contrast, the results of tests with lubrication showed a more gradual variation, with the extent of wear decreasing with implant dose at both 2N and 10N loads. Finally, the influence of Ti implantation on possible wear mechanisms is discussed in the light of information provided by several surface characterization techniques. ((orig.))

  8. Effect of ion implantation on apple wine yeast

    International Nuclear Information System (INIS)

    The wild type apple wine yeast Y02 was treated by ion implantation with the dose of 8 x 1015 ion/cm2. As results, a special mutant strain, IONII-11 dry, was obtained. The morphology characters, partial biochemistry characters, mycelium protein of the mutant strain were distinctively changed compared with original strain Y02. After the fermentation test ,the apple wine producing rate of the mutant strain increased 22.4% compared with original strain. These results showed that ion implantation was an effective method for mutagenesis

  9. Compression of self-ion implanted iron micropillars

    International Nuclear Information System (INIS)

    Highlights: ► Self-ion implantation used to cause cascade damage in pure iron. ► Increase in hardness measured in implanted region using nanoindentation. ► Micropillars manufactured and tested in both implanted and unimplanted material. ► Marked difference in deformation mechanisms in each set of pillars seen using scanning electron microscopy. ► No difference in yield stress seen, suggesting it is difficult to use micro-compression to understand bulk properties. - Abstract: Ion implantation causes displacement damage in materials, leading to the formation of small dislocation loops and can cause changes to the material’s mechanical properties. Samples of pure Fe were subjected to Fe+ implantation at 275 °C, producing damage of ∼6 dpa to ∼1 μm depth. Nanoindentation into implanted material shows an increase in hardness compared to unimplanted material. Micropillars were manufactured in cross-section specimens of implanted and unimplanted material and compressed using a nanoindenter. The implanted pillars have a deformation mode which differs markedly from the unimplanted pillars but show no change in yield-stress. This suggests that the controlling mechanism for deformation is different between nanoindentation and micropillar compression and that care is needed if using micropillar compression to extract bulk properties of irradiated materials.

  10. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    International Nuclear Information System (INIS)

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (α,α) backscattering and the resonant nuclear reaction 1H(15N,αγ)12C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of marrow bone cells on the implanted sample surface with that of titanium

  11. [Improve wear resistance of UHMWPE by O+ ion implanted].

    Science.gov (United States)

    Xiong, Dangsheng

    2003-12-01

    Ultra high molecular weight polyethylene (UHMWPE) was implanted with 450 keV and 100 keV O+ ions at dosage of 1 x 10(15)/cm2, 5 x 10(15)/cm2, 3 x 10(14)/cm2, respectively. Its wear behaviors were studied under dry friction condition and lubrication by means of distilled water using a pin-on-disk tribometer with a Si3N4 ceramic ball as a counterface. The wear surfaces were examined with SEM. The experimental results showed that the wear rate of implanted UHMWPE is lower than that of un-implanted UHMWPE under both dry and distilled friction conditions, especially for 450 keV energy and 5 x 10(15)/cm2 dose implantation. The friction coefficient of O+ ions implanted UHMWPE is higher than that of un-implanted UHMWPE under both dry and distilled friction conditions. The adhesive, plow and plastic deformation are the wearing mechanism for un-implanted UHMWPE; the fatigue and abrasive wear are that for implanted UHMWPE. PMID:14716850

  12. Strength and tribology of bulk and electroformed nickel amorphized by implantation of titanium and carbon

    International Nuclear Information System (INIS)

    Dual ion implantation of titanium and carbon was shown to produce an amorphous layer of exceptional strength within annealed bulk Ni and electroformed Ni and Ni80Fe20 materials used in micro-electromechanical systems. The intrinsic elastic and plastic mechanical properties of the implanted region were quantified using nanoindentation testing in conjunction with finite-element modeling, and the results were interpreted in the light of microstructures observed by electron microscopy. The implantation treatment was found to produce substantial reductions in unlubricated friction and wear

  13. Luminescence of a titanate compound under europium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Plantevin, O., E-mail: plantevin@csnsm.in2p3.fr [Centre de Sciences Nucléaires et de Sciences de la Matière CSNSM, Univ Paris-Sud, CNRS/IN2P3, 91405 Orsay Cedex (France); Oliviero, E. [Centre de Sciences Nucléaires et de Sciences de la Matière CSNSM, Univ Paris-Sud, CNRS/IN2P3, 91405 Orsay Cedex (France); Dantelle, G.; Mayer, L. [Laboratoire de Physique de la Matière Condensée LPMC, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)

    2014-05-01

    The ability to incorporate europium ions in a near-surface layer of a nonlinear optical material KTiOPO{sub 4} by ion implantation is reported here. Europium diffusion as well as surface modification were characterized after annealing using RBS. The photoluminescence of the as-implanted samples indicates that the creation of defects gives rise to green visible emission centered about 550 nm. Annealing up to 1000 °C does not allow the oxidation to the 3+ valence state of the europium ion. However it is shown that annealing up to such high temperature gives rise to an intense near infra-red photoluminescence in the range 800–1100 nm in implanted samples at an optimal fluence of 2 × 10{sup 13} europium ions/cm{sup 2}.

  14. Luminescence of a titanate compound under europium ion implantation

    International Nuclear Information System (INIS)

    The ability to incorporate europium ions in a near-surface layer of a nonlinear optical material KTiOPO4 by ion implantation is reported here. Europium diffusion as well as surface modification were characterized after annealing using RBS. The photoluminescence of the as-implanted samples indicates that the creation of defects gives rise to green visible emission centered about 550 nm. Annealing up to 1000 °C does not allow the oxidation to the 3+ valence state of the europium ion. However it is shown that annealing up to such high temperature gives rise to an intense near infra-red photoluminescence in the range 800–1100 nm in implanted samples at an optimal fluence of 2 × 1013 europium ions/cm2

  15. Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials

    CERN Document Server

    Huang, M B; Nuesca, G; Moore, R

    2002-01-01

    Materials synthesis of carbon nitride has been attempted with co-implantation of carbon and nitrogen into thermally grown SiO sub 2. Following implantation of C and N ions to doses of 10 sup 1 sup 7 cm sup - sup 2 , thermal annealing of the implanted SiO sub 2 sample was conducted at 1000 degree sign C in an N sub 2 ambient. As evidenced in Fourier transform infrared measurements and X-ray photoelectron spectroscopy, different bonding configurations between C and N, including C-N single bonds, C=N double bonds and C=N triple bonds, were found to develop in the SiO sub 2 film after annealing. Chemical composition profiles obtained with secondary ion mass spectroscopy were correlated with the depth information of the chemical shifts of N 1s core-level electrons, allowing us to examine the formation of C-N bonding for different atomic concentration ratios between N and C. X-ray diffraction and transmission electron microscopy showed no sign of the formation of crystalline C sub 3 N sub 4 precipitates in the SiO ...

  16. Terahertz generation from Cu ion implantation into lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuhua, E-mail: wyh61@163.com [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan university of Science and Technology, Wuhan 430081 (China); Wang, Ruwu; Yuan, Jie [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan university of Science and Technology, Wuhan 430081 (China); Wang, Yumei [Department of Nephrology, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430022 (China)

    2014-03-15

    In this letter, the authors present first observation of terahertz generation from Cu implantation of lithium niobate crystal substrate. Lithium niobate single crystal is grown by Czochralski method. Metal nanoparticles synthesized by Cu ion implantation were implanted into lithium niobate single crystal using metal vapor vacuum arc (MEVVA) ion source. 1 kHz, 35 fs laser pulse centred at 800 nm was focused onto the samples. The supercontinuum spectra of the sample are obtained. Terahertz was generated via this kind of sample and investigated using the electro-optical sampling technique. The findings suggest that under the investigated implantation parameter, a strong spectral component in excess of 0.46 THz emission was found from Cu ion implantation of lithium niobate. -- Highlights: • We first observation of terahertz generation from Cu implantation of lithium niobate crystal substrate. • Lithium niobate single crystal is grown by Czochralski method. Cu nanoparticles in lithium niobate have been formed by using MEVVA ion source. • The THz bandwidth and center from this kind of sample were determined.

  17. Effects of CPII implantation on the characteristics of diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ya-Chi [Department of Materials Science and Engineering, National Chung Hsing University, 250, Kuo Kuang Road, Taichung 402, Taiwan (China); Weng, Ko-Wei, E-mail: wl2426@ms26.hinet.net [Department of Materials Science and Engineering, MingDao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa 523, Taiwan (China); Chao, Ching-Hsun; Lien, Shui-Yang [Department of Materials Science and Engineering, MingDao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa 523, Taiwan (China); Han, Sheng [Department of Leisure and Recreation Management, National Taichung Institute of Technology 129 San-min Road, Section 3, Taichung 404, Taiwan (China); Chen, Tien-Lai [Department of Holistic Wellness, MingDao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa 523, Taiwan (China); Lee, Ying-Chieh [Department of Materials Engineering,Nationla Pingtung University of Science and Technology 1, Hseuh Fu Road, Nei Pu, Pingtung, 91201, Taiwan (China); Shih, Han-Chang [Department of Materials Science and Engineering, National Chung Hsing University, 250, Kuo Kuang Road, Taichung 402, Taiwan (China); Wang, Da-Yung [Department of Materials Science and Engineering, MingDao University, 369-B, Wen-Hua Road, Peetow, Chang-Hwa 523, Taiwan (China)

    2009-05-30

    A diamond-like carbon film (DLC) was successfully synthesized using a hybrid PVD process, involving a filter arc deposition source (FAD) and a carbon plasma ion implanter (CPII). A quarter-torus plasma duct filter markedly reduced the density of the macro-particles. Graphite targets were used in FAD. Large electron and ion energies generated from the plasma duct facilitate the activation of carbon plasma and the deposition of high-quality DLC films. M2 tool steel was pre-implanted with 45 kV carbon ions before the DLC was deposited to enhance the adhesive and surface properties of the film. The ion mixing effect, the induction of residual stress and the phase transformation at the interface were significantly improved. The hardness of the DLC increased to 47.7 GPa and 56.5 GPa, and the wear life was prolonged to over 70 km with implantation fluences of 1 x 10{sup 17} ions/cm{sup 2} and 2 x 10{sup 17} ions/cm{sup 2}, respectively.

  18. Effects of CPII implantation on the characteristics of diamond-like carbon films

    International Nuclear Information System (INIS)

    A diamond-like carbon film (DLC) was successfully synthesized using a hybrid PVD process, involving a filter arc deposition source (FAD) and a carbon plasma ion implanter (CPII). A quarter-torus plasma duct filter markedly reduced the density of the macro-particles. Graphite targets were used in FAD. Large electron and ion energies generated from the plasma duct facilitate the activation of carbon plasma and the deposition of high-quality DLC films. M2 tool steel was pre-implanted with 45 kV carbon ions before the DLC was deposited to enhance the adhesive and surface properties of the film. The ion mixing effect, the induction of residual stress and the phase transformation at the interface were significantly improved. The hardness of the DLC increased to 47.7 GPa and 56.5 GPa, and the wear life was prolonged to over 70 km with implantation fluences of 1 x 1017 ions/cm2 and 2 x 1017 ions/cm2, respectively.

  19. Development of Metal Ion Implanter and it's Application

    International Nuclear Information System (INIS)

    PEFP(Proton Engineering Frontier Project) has been developed some test facilities using domestic accelerators for the basic experiments and pilot studies of proton and ion beam application technology developments. Metal ion implanter has been designed and manufactured for studies of surface modification by metal ion beam. The purpose of design is domestic development of the basic technology for the application field using by metal ion beam. The main point of design and manufacture is production, acceleration and transportation of metal ion beam current up to 1mA and ion energy up to 100keV and beam size on target up to 10cm x 10cm. Metal ion implanter consists of modified Burnas ion source, mass separation magnet, slit, acceleration tube, magnetic quadrupole, electrostatic scanner and target. It includes fiber optic links for the monitoring and control of the ion source parameters in the high voltage zone, and a computer system for the characterization of the ion beam and the whole control of an implantation process. Also, this equipment used for diverse application areas, like gem coloring, photo-catalyst, solar cell, lighting LED, medical material, and so on, by modifying the surface characteristics of materials such as polymers, metals, and ceramics

  20. Compensation of mobile-ion movement in SiO2 by ion implantation

    International Nuclear Information System (INIS)

    A study has been undertaken to determine the effect of ion-implanted fluorine on the properties of SiO2 for use as a gate dielectric in MOS devices. C-V measurements and bias-temperature stressing showed that mobile-ion drift can be compensated for by the implanted ions. Further tests showed that it is the implant damage and not the ion itself which was responsible for the compensation. uv excitation of the samples was used in an attempt to identify the nature of the compensation effect, but the results are not definitive

  1. The effect of additional high dose carbon implantation on the tribological properties of titanium implanted steel

    International Nuclear Information System (INIS)

    The tribological properties and the structural changes of hardened steel implanted with titanium followed by carbon were investigated as a function of additional carbon dose. The dose of Ti was 5.1017 Ti cm-2 and the additional C doses were 0, 4.1017, 8.1017 and 1.2.1018 Ccm-2. After Ti implantation, the steel surface transformed to a Fe-Ti-C ternary amorphous phase. Additional implantation of carbon to a dose of 4.1017 Ccm-2 produced fine TiC precipitates dispersed in the ternary amorphous matrix. When the additional C dose exceeded 8.1017 Ccm-2, very fine graphite precipitates appeared in the ternary amorphous phase. The steel surface with very fine graphite precipitates exhibited superior tribological properties. The benefits provided by additional high dose carbon implantation are considered as follows: strengthening of the amorphous phase, thickening of the modified layer, dispersion strengthening of the implanted layer by very fine graphite precipitates and lubrication effect by graphite particles. Comparing the friction properties of Ti+C implanted steel with that of C implanted steel, the role of Ti implantation is to reduce the friction of the surface during sliding and the role of C implantation is to increase the lifetime of the surface against wear. (orig.)

  2. Divacancy formation by polyatomic ion implantation

    International Nuclear Information System (INIS)

    The production of the neutral divacancy absorption band (1.8 μm at 3000K) by the polyatomic series C+ (70 keV), CO+ (163 keV), CO2+ (256 keV), and by O1+ (85 keV), O2+ (170 keV), O3+ (255 keV) has been investigated. The oxygen series is emphasized because equal total energy and impurity deposition can be achieved simultaneously. For fluences significantly less than those required for amorphous layer formation, divacancy formation by 255 keV O3+ implantation at 3000K is approximately 1.5 times that for an equal atomic dose introduced by 85 keV O1+ implantation. Divacancy formation at 800K followed by heating to 3000K, is approximately 1.3 times that for an equivalent implantation at 3000K. An enhanced probability for divacancy formation with increasing initial defect density is suggested to explain the polyatomic and temperature effects. For polyatomic implantation the initial defect density is increased by simultaneous collisions within a cascade, while suppressed annealing allows accumulation of initial defects for low temperature implantation. Defect annealing for energy deposition near the crystalline-to-amorphous transition is especially important in determining the nature of the disorder. The results are compared with previous channeling-backscattering measurements of disorder produced by polyatomic implantation

  3. Surface modification of Natural Rubber by ion implantation: Evidence for implant doping

    International Nuclear Information System (INIS)

    Ion implantation is one of the most powerful and well-known technique for surface modification in polymers. Thin films of Natural Rubber were modified by the implantation of 60 keV N+ ions to the fluences of 1011-1015 cm-2. The electrical conductivity measurements of irradiated sample show 10 orders of magnitude compared to pristine state. Along with conductivity change there was a noticeable change in color to a dense shiny black for the most highly conducting films. The analysis of temperature dependence of dc electrical conductivity data reveals a three-dimensional variable range hopping mechanism. The microstructural evolution of the virgin and ion-beam modified samples was investigated by spectroscopic analysis such as UV/Vis and FTIR. These spectral studies gave evidence for the production of conjugate double bonds, which is a clear cut indication of implant doping. This is an important result since ion implantation usually does not produce doping in polymeric materials and only a few reports about the possibility of implant doping in polymers are available. The significant aspect of this study is that this confirms, the Natural Rubber's potential to be used as a microelectronic device material. Also an attempt has been made to compare the conductivity enhancement in Natural Rubber by chemical and implant doping

  4. Osteoconductivity of hydrophilic microstructured titanium implants with phosphate ion chemistry.

    Science.gov (United States)

    Park, Jin-Woo; Jang, Je-Hee; Lee, Chong Soo; Hanawa, Takao

    2009-07-01

    This study investigated the surface characteristics and bone response of titanium implants produced by hydrothermal treatment using H(3)PO(4), and compared them with those of implants produced by commercial surface treatment methods - machining, acid etching, grit blasting, grit blasting/acid etching or spark anodization. The surface characteristics were evaluated by scanning electron microscopy, thin-film X-ray diffractometry, X-ray photoelectron spectroscopy, contact angle measurement and stylus profilometry. The osteoconductivity of experimental implants was evaluated by removal torque testing and histomorphometric analysis after 6 weeks of implantation in rabbit tibiae. Hydrothermal treatment with H(3)PO(4) and subsequent heat treatment produced a crystalline phosphate ion-incorporated oxide (titanium oxide phosphate hydrate, Ti(2)O(PO(4))(2)(H(2)O)(2); TiP) surface approximately 5microm in thickness, which had needle-like surface microstructures and superior wettability compared with the control surfaces. Significant increases in removal torque forces and bone-to-implant contact values were observed for TiP implants compared with those of the control implants (pcleaning of the implants removed during the removal torque testing, a considerable quantity of attached bone was observed on the surfaces of the TiP implants. PMID:19332400

  5. Effects of Ni+ and Ar+ ions implantation on magnetic properties of C/Si thin film

    International Nuclear Information System (INIS)

    The study of Ni+ and Ar+ ions effects on the magnetic properties of C/Si thin film was carried out. The Ni+ and Ar+ ions were implanted on C/Si thin up to the doses of 5 x 1016 ion/cm2 Identification by XRD indicates Ni+ and Ar+ ion intensity of diffraction peaks for C (002) and Ni (010). The ion implantation could cause the decline in the peak intensity of C (002). The peak intensity of C (002) decreases with the increasing of dose, whereas, the peak intensity of Ni (010) increases with increasing of ion dose. These results indicate the occurrence of distribution of Ni atoms on the surface of C/Si thin film. Measurement of magnetic properties by VSM (Vibrating Sample Magnetometer) indicates a change in magnetic properties of carbon nano structures on a thin film with addition of implantation dose. These magnetic properties increase with the addition of Ni+ ion dose, as indicated by the increase in the values of Ms (saturated magnetization), Mr (remanent magnetization) and Hc (coercive field), i.e 28%, 21% and 42% respectively. Measurement of GMR with Four Point Probe also shows an increase in the value of MR of about 26% at 7.5 kOe magnetic field with increasing ion dose. (author)

  6. Optimal pulse modulator design criteria for plasma source ion implanters

    International Nuclear Information System (INIS)

    This paper describes what are believed to be the required characteristics of a high-voltage modulator for efficient and optimal ion deposition from the ''Plasma Source Ion Implantation'' (PSII) process. The PSII process is a method to chemically or physically alter and enhance surface properties of objects by placing them in a weakly ionized plasma and pulsing the object with a high negative voltage. The attracted ions implant themselves and form chemical bonds or are interstitially mixed with the base material. Present industrial uses of implanted objects tends to be for limited-production, high-value-added items. Traditional implanting hardware uses the typical low-current (ma) semiconductor ''raster scan'' implanters. The targets must also be manipulated to maintain a surface normal to the ion beam. The PSII method can provide ''bulk'' equipment processing on a large industrial scale. For the first generation equipment, currents are scaled from milliamps to hundreds of amps, voltages to -175kV, at kilohertz rep-rates, and high plasma ion densities

  7. Implantation of titanium, chromium, yttrium, molybdenum, silver, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum ion source into 440C stainless steel

    International Nuclear Information System (INIS)

    Titanium, yttrium, molybdenum, silver, chromium, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum arc (MEVVA) ion source were implanted into 440C stainless steel in the dose region 1017 ions cm-2 with extraction voltages of up to 70 kV. Glow discharge spectroscopy (GDS), friction coefficient, and Vickers microhardness of the specimens were studied. Grooves made by friction tests were investigated by electron probe microanalysis (EPMA). GDS showed incorporation of carbon in the yttrium, hafnium, tantalum, tungsten and platinum implanted specimens, as well as titanium implanted samples. A large amount of oxygen was observed in the yttrium implanted specimen. The friction coefficient was measured by reciprocating sliding of an unimplanted 440C ball without lubricant at a load of 0.245 N. The friction decreased and achieved a stable state after implantation of titanium, hafnium and tantalum. The friction coefficient of the platinum implanted specimen showed a gradual decrease after several cycles of sliding at high friction coefficient. The yttrium implanted sample exhibited a decreased but slightly unstable friction coefficient. Results from EPMA showed that the implanted elements, which gave decreased friction, remained even after sliding of 200 cycles. Implantation of chromium, molybdenum, silver and tungsten did not provide a decrease in friction and the implants were gone from the wear grooves after the sliding tests. (orig.)

  8. Al-O interactions in ion-implanted crystalline silicon

    Science.gov (United States)

    Galvagno, G.; La Ferla, A.; Spinella, C.; Priolo, F.; Raineri, V.; Torrisi, Lucio; Rimini, E.; Carnera, A.; Gasparotto, A.

    1994-08-01

    The formation and dissolution of Si-O-Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.

  9. Phosphorus ion implantation gettering effects in Mos structures

    International Nuclear Information System (INIS)

    The influence of some variables of phosphorus ion implantation gettering efficiency in Mos capacitors was investigated by the C-t measurement technique. The Si wafers were gettered by a 120 keV backside P ion implantation, into bare silicon and into silicon covered by a screen oxide 600-1200 Angstroms thick, with subsequent annealing at 900 Centigrade degrees for 30-150 min in N2. The generation lifetime was found to show maximum value after 120 min anneal. A marked tendency in the behavior of generation lifetime, when P was implanted into bare silicon and when it was implanted into silicon covered by an oxide, was not found. In both cases, the generation lifetime increases with the increase of oxide thickness. (Author)

  10. Simulation methods of ion sheath dynamics in plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    WANG Jiuli; ZHANG Guling; WANG Younian; LIU Yuanfu; LIU Chizi; YANG Size

    2004-01-01

    Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is discussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some calculated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Finally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.

  11. Evolution of defects in silicon carbide implanted with helium ions

    Science.gov (United States)

    Zhang, Chonghong; Song, Yin; Yang, Yitao; Zhou, Chunlan; Wei, Long; Ma, Hongji

    2014-05-01

    Effects of accumulation of radiation damage in silicon carbide are important concerns for the use of silicon carbide in advanced nuclear energy systems. In the present work lattice damage in silicon carbide crystal (4H type) implanted with 100 keV 4He+ ions was investigated with Rutherford backscattering spectrometry in channeling geometry (RBS/c) and positron beam Doppler broadening spectrometry (PBDB). Helium implantation was performed at the specimen temperature of 510 K to avoid amorphization of the SiC crystal. Fluences of helium ions were selected to be in the range from 1 × 1016 to 3 × 1016 ions cm-2, around the dose threshold for the formation of observable helium bubbles under transmission electron microscopes (TEM). The RBS/c measurements show distinctly different annealing behavior of displaced Si atoms at doses below or above the threshold for helium bubble formation. The RBS/c yield in the peak damage region of the specimen implanted to 3 × 1016 He-ions cm-2 shows an increase on the subsequently thermal annealing above 873 K, which is readily ascribed to the extra displacement of Si atoms due to helium bubble growth. The RBS/c yield in the specimen implanted to a lower ion fluence of 1.5 × 1016 He-ions cm-2 decreases monotonously on annealing from ambient temperatures up to 1273 K. The PBDB measurements supply evidence of clustering of vacancies at temperatures from 510 to 1173 K, and dissociation of vacancy clusters above 1273 K. The similarity of annealing behavior in PBDB profiles for helium implantation to 1 × 1016 and 3 × 1016 ions cm-2 is ascribed to the saturation of trapping of positrons in vacancy type defects in the damaged layers in the specimens helium-implanted to the two dose levels.

  12. Quantum information process with nanometre precession ion implantation

    International Nuclear Information System (INIS)

    The spin state of a single nitrogen-vacancy centre in diamond is one of the most attractive candidate for quantum information processing because of its long spin coherence time. Further more coupling (magnetic dipole) between the spins are required for scalable quantum computing (2-qbit operation). This process requires a high implantation positioning accuracy and nitrogen free clean diamond (<0.1 ppm nitrogen concentration). Here we report recent progress towards single ion implantation within nanometre scale accuracies. (orig.)

  13. Single versus double ion implantation: a deep level study

    Energy Technology Data Exchange (ETDEWEB)

    Alfieri, G. [Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto (Japan); Kimoto, T. [Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto (Japan); Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto (Japan)

    2009-02-15

    We performed a comparison study of electrically active defects generated in single and double ion implantated 4H-SiC epilayers. Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements revealed that dou- ble implantation, is responsible for a different compensation mechanism of the net-acceptor concentration, and for the different nature and annealing behavior of the detected deep levels. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Optical contrast in ion-implanted amorphous silicon carbide nanostructures

    International Nuclear Information System (INIS)

    Topographic and optical contrasts formed by Ga+ ion irradiation of thin films of amorphous silicon carbide have been investigated with scanning near-field optical microscopy. The influence of ion-irradiation dose has been studied in a pattern of sub-micrometre stripes. While the film thickness decreases monotonically with ion dose, the optical contrast rapidly increases to a maximum value and then decreases gradually. The results are discussed in terms of the competition between the effects of ion implantation and surface milling by the ion beam. The observed effects are important for uses of amorphous silicon carbide thin films as permanent archives in optical data storage applications

  15. Improving the properties of titanium alloys by ion implantation

    International Nuclear Information System (INIS)

    The 'Ionguard' ion-implantation process for the enhancement of Ti alloys' wear, corrosion-resistance, and other surface properties has found use in orthopedic implant, ball valve, turbine blade, specialty fastener, and threaded component applications. The application of the Ironguard process to finished components does not jeopardize their dimensional integrity or surface finish. Ironguard is, moreover, a low-temperature process which leaves the bulk properties of products unaffected. Nitrogen is often used as an implant by the process; attention is given to results obtained for the Ti-6Al-4V alloy. 6 refs

  16. Adjustment of threshold voltage of MOS devices by ion implantation

    International Nuclear Information System (INIS)

    In this paper we report the effect of oxide thickness, implant energy and dose on threshold voltage shift Δ Vsub(T). The implant parameters e.g. stopping power, projected range, straggle and the energy loss per micron for an ion in the substrate lattice are calculated using the WHB potential. The junction depth beneath the oxide semiconductor surface is calculated using a two layer model. The parameters are then used in a theoretical calculation of threshold shift of MOS devices. Experimental threshold voltages for unimplanted and implanted samples were obtained from C-V plots, showing fairly good agreement with theory. (author)

  17. Ion implantation induced by Cu ablation at high laser fluence

    International Nuclear Information System (INIS)

    High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438 nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230 J) and the short pulse duration (400 ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6 x 106 J/cm2, the maximum ion energy was about 600 keV and the maximum charge state was about 27+. In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5 MeV helium ions, Auger electron spectroscopy (AES) with 3 keV electron beam and 1 keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis

  18. Quantum-dot composite silicate glasses obtained by ion implantation

    International Nuclear Information System (INIS)

    Ion implantation is a useful technique to obtain composite materials such as nanocluster-containing silicate glasses. Depending on the choice of the pair 'implanted atom-dielectric host', ion implantation of metals in glass gives rise to the formation of new compounds and/or metallic nanoparticles. In spite of the great interest, processes governing the chemical and physical interaction between the implanted atoms and the atoms in the host matrix are not completely understood. In this paper, metal, alloy and binary compound nanocluster formation is studied after ion implantation in silica and soda-lime glass. Particular emphasis is given to the comparison among different existing approaches to the understanding of the chemical interactions in these systems. As the physical properties of these composites depend on the cluster structure, composition and size, it is important to set procedures for modifying these characteristics. Recent results indicate that thermal treatments in controlled atmosphere of gold + copper double-implanted silica favor the formation of either alloy nanoclusters or copper compounds, depending on the annealing atmosphere

  19. Method For Silicon Surface Texturing Using Ion Implantation

    Science.gov (United States)

    Kadakia, Nirag; Naczas, Sebastian; Bakhru, Hassaram; Huang, Mengbing

    2011-06-01

    As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods—ion implantation—is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.

  20. Influence of ion implantation on titanium surfaces for medical applications

    Science.gov (United States)

    Krischok, Stefan; Blank, Claudia; Engel, Michael; Gutt, Richard; Ecke, Gernot; Schawohl, Jens; Spieß, Lothar; Schrempel, Frank; Hildebrand, Gerhard; Liefeith, Klaus

    2007-09-01

    The implantation of ions into the near surface layer is a new approach to improve the osseointegration of metallic biomaterials like titanium. Meanwhile it is well known that surface topography and surface physico-chemistry as well as visco-elastic properties influence the cell response after implantation of implants into the human body. To optimize the cell response of titanium, ion implantation techniques have been used to integrate calcium and phosphorus, both elements present in the inorganic bone phase. In this context, the concentration profile of the detected elements and their chemical state have been investigated using X-ray photoelectron spectroscopy and Auger electron spectroscopy depth profiling. Ion implantation leads to strong changes of the chemical composition of the near surface region, which are expected to modify the biofunctionality as observed in previous experiments on the cell response. The co-implantation of calcium and phosphorus samples, which showed best results in the performed tests (biological and physical), leads to a strong modification of the chemical surface composition.

  1. Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Barbara, D.; Prawer, S.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, {beta}-C{sub 3}N{sub 4}, is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs.

  2. Ion implantation for manufacturing bent and periodically bent crystals

    International Nuclear Information System (INIS)

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams

  3. Chromium plating pollution source reduction by plasma source ion implantation

    International Nuclear Information System (INIS)

    There is growing concern over the environmental toxicity and workers' health issues due to the chemical baths and rinse water used in the hard chromium plating process. In this regard the significant hardening response of chromium to nitrogen ion implantation can be environmentally beneficial from the standpoint of decreasing the thickness and the frequency of application of chromium plating. In this paper the results of a study of nitrogen ion implantation of chrome plated test flats using the non-line-of-sight Plasma Source Ion Implantation (PSII) process, are discussed. Surface characterization was performed using Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and Electron Spectroscopy for Chemical Analysis (ESCA). The surface properties were evaluated using a microhardness tester, a pin-on-disk wear tester, and a corrosion measurement system. Industrial field testing of nitrogen PSII treated chromium plated parts showed an improvement by a factor of two compared to the unimplanted case

  4. Etching effects in ion implanted SiO2

    International Nuclear Information System (INIS)

    Chemical and physical transformations involved in ion implantation processes in glasses determine changes in mechanical and tribological properties, in network dilatation, in induced optical absorption and luminescence and in the composition and chemical behaviour as a function of different experimental conditions (ion, energy, dose, target temperature). Variations of chemical etch rate in HF are related to radiation damage and formation of compounds. A systematic study of etch rate changes in silica due to Ar, N, Si plus N implants has been performed. Structure modifications at depths greater than the corresponding implanted ion ranges are evidenced for nuclear deposited energy values greater than 1022 keV cm-3. Formation of silicon oxynitrides reduces the etch rate values. (author). 8 refs., 3 figs., 1 tab

  5. Ion implantation for manufacturing bent and periodically bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo, E-mail: guidi@fe.infn.it; Mazzolari, Andrea; Paternò, Gianfranco [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy); Mattei, Giovanni, E-mail: giovanni.mattei@unipd.it; Scian, Carlo [Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Lanzoni, Luca [Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)

    2015-08-10

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

  6. Effects of ion implantation on the hardness and friction behaviour of soda-lime silica glass

    International Nuclear Information System (INIS)

    Ion implantation-induced changes in the near-surface mechanical properties of soda-lime silica glass have been investigated by indentation and scratch testing and have been found to be more complicated than changes in the corresponding properties of crystalline ceramic materials. Argon, nitrogen, carbon and potassium ions were used with energies in the range 45-300 keV. Hardness and scratch friction tests were performed under ambient laboratory conditions. At low doses, a decrease in hardness and an increase in both friction and surface stress are observed which are attributed to the electronic damage produced by ion implantation. At higher doses, the hardness increases again and a maximum is produced similar to the behaviour observed for crystalline materials. Similarly there is found to be a second stress and friction peak at this dose. This behaviour is shown to be due to the build-up of displacement damage produced by ion implantation and is thus very similar to the radiation hardening (and eventual amorphization) behaviour of ion-implanted crystalline ceramics. For glass, ''amorphization'' probably corresponds to some change in the existing amorphous state which, in turn, is responsible for the reduction in hardness, stress and friction at the highest doses. (author)

  7. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  8. Cathodoluminescence characterization of ion implanted GaAs

    Science.gov (United States)

    Cone, M. L.

    1980-03-01

    The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials.

  9. Mutagenic effects of nitrogen and carbon ions on stevia

    International Nuclear Information System (INIS)

    Dry seeds of stevia were implanted by 60∼100 keV nitrogen ion and 75 keV carbon ion with various doses. The biological effects in M1 and mutation in M2 were studied. The results showed that ion beam was able to induce variation on chromosome structure and inhibited mitosis action in root tip cells. The rate of cells with chromosome aberration was increased with the increase of ion beam energy and dose. Energy effects of mitosis were presented between 75 keV and 60, 100 keV. As compared with γ-rays, the effects of ion beam were lower on chromosomal aberration but were higher on frequency of the mutation. The rate of cell with chromosome aberration and M2 useful mutation induced by implantation of carbon ion was higher than those induced by implantation of nitrogen ion. Mutagenic effects of Feng1 x Ri Yuan and of Ri Yuan x Feng2 are higher than that of Ji Ning and Feng2

  10. Molecular mechanism of mutagenesis and interaction of incident ions with organism implanted by heavy ions beam

    International Nuclear Information System (INIS)

    As a new mutagenesis technique, low energy heavy ion implantation started in China for the study of interaction effect between incident ions and organism, and great achievements have been obtained in crop breeding. The article reviewed the main biological effects induced by heavy ion implantation, including physiology, biochemistry and genetics effects, on levels of cell and chromosome, gene expression, DNA methylation, DNA damage and reparation etc. It compared the differences in mutagenesis for organism by high energy and low energy ion implantation, as well as γ ray radiation. Future investigation topics were proposed, the emphasis of researches in future was pointed out, i.e., the molecular mechanism and effects of gene differential expression of organism treated by ion implantation. (authors)

  11. Chromium redistribution in ion-implanted GaAs

    International Nuclear Information System (INIS)

    In this paper an attempt is made to find systematic differences between the annealing conditions for ion implanted GaAs where Cr is observed to redistribute and the conditions where it does not. For samples where Cr redistribution was observed, electrical and chemical and/or strain interactions were separated. The results indicate that electrical interactions are at least a limiting factor and in most cases a dominant factor in Cr redistribution. For this reason it appears that Cr redistribution in ion implanted samples can be minimized or eliminated by annealing at temperatures such that the background free carrier concentration screens out any internal electric fields. (author)

  12. Development of a CMOS process using high energy ion implantation

    International Nuclear Information System (INIS)

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  13. Nitrogen implantation in steel with a pulsed ion beam accelerator

    International Nuclear Information System (INIS)

    The modification of wear properties of high speed steel cutting tools for lathe by nitrogen implantation, were studied in a normal boring process of SAE 1045 steel parts. The implantation was done with a pulsed ion beam accelerator, which produced a nitrogen ion beam of continuous energy spectrum (10-300 KeV) with 400 ns pulsed duration on target. A tool fluence of 1.65 x 1017 cm-2 - obtained by 30 singles shot accumulation was used in the experiments. (author)

  14. Hardening of WC-Co alloys by ion implantation

    International Nuclear Information System (INIS)

    The hardening effect on the surface layers of WC-Co alloys after Ar+- and N+-ion implantation with the fluence in the range 1 divided by 8.7 x 1017 cm-2 has been investigated at room temperature and under heating with an ion beam. The depth of the Auger distribution profiles and the microhardness of implanted samples were measured. The radiation-stimulated diffusion of nitrogen atoms and the microhardness enhancement were observed. The contribution of the polymorphic Co-phase transformation and the production of Co-N compounds is discussed. (author)

  15. SIMS system for the analysis of sputtered ions during ion implantation

    International Nuclear Information System (INIS)

    A system is described which allows secondary ion mass spectroscopy (SIMS) measurements during implantation at primary energies up to 170 keV. The secondary ions are produced by the implantation beam itself. The system has been assembled to study the stoichiometric disturbances near the surface of compound semiconductors caused by the bombardment with ions. Furthermore it is possible to examine the influence of sputter effects during implantation on the doping profile. The arrangement also provides means for standard SIMS and Auger electron spectroscopy (AES). (Auth.)

  16. Plasma immersion ion implantation of a pea seed and its RBS spectra

    International Nuclear Information System (INIS)

    Plasma immersion ion implantation (PI3) is a new technique with certain advantages over biological samples developed in CTU. argon as well as nitrogen ion implantation of a pea seed has been carried out with the PI3 implanter. Their RBS spectra were studied. The results show that the mass deposition effect of ion implantation into biological samples can be achieved with our PI3 implanter. In addition, there is an optimal implantation time for a given treatment condition. The PI3 technique opens up new possibilities for the ion implantation into biological samples

  17. Helium ion implantation in zirconium: Bubble formation and growth

    Science.gov (United States)

    Totemeier, Aaron Robert

    To evaluate the behavior of inert helium gas bubbles in zirconium three variants of the metal were implanted with 140 keV helium ions to a total fluence of 3x1017 cm--2 and characterized in cross-section TEM in their as-implanted state as well as during annealing at different temperatures. The three zirconium alloys included high-purity crystal bar material, Zircaloy-4, and a powder-metallurgically extruded material with high carbon and oxygen concentrations. At a sample depth consistent with a helium concentration of approximately 5 atomic percent, a change in the structure of the zirconium was observed a high density region of small (4nm diameter) bubbles formed at concentrations above 10 atom percent. Initial bubble formation and growth was observed to occurred at a temperature between 400-450 °C and these initial bubbles had a unique planar geometry prior to migration and coalescence into more three-dimensional bubbles. These planar bubbles appear to be aligned with major axes parallel to the TEM specimen surface and their formation and growth is possibly due to an increase in the thermal vacancy flux within the zirconium. The observations of bubble response to high temperature annealing suggest that in zirconium, as in other metals, maximum bubble size is weakly dependent on annealing time, whereas the bubble size distribution is strongly dependent on time. Specimens that underwent a prolonged room temperature aging developed a multimodal bubble size distribution within the high density region of small bubbles, concentrated near the highest helium concentration depth.

  18. A high-energy, high-current ion implantation system

    International Nuclear Information System (INIS)

    High current (Pre-Depsup(TM)) ion implanters, operating at 80 keV, have met a need in the semiconductor industry. For certain processes, higher energies are required, either to penetrate a surface layer or to place the dopant ion at a greater depth. The Eaton/Nova Model NV10-160 Pre-Dpsup(TM) Ion Implanter has been developed to meet those special needs. Beam currents as high as 10.0 mA are available at energies up to 160 keV for routine production applications. The system has also been qualified for low current, low dose operation (1011 ions cm-2) and this unique versatility provides the Process and Equipment Engineers with a powerful new tool. The Model NV10-160 also utilizes the Nova-designed, double disk interchange processing system to minimize inactive beam time so that wafer throughputs, up to 300 wafers/h, are achievable on a routine basis. Datalocksup(TM), a computer driven implant monitoring system and AT-4, the Nova cassette-to-cassette wafer loader, are available as standard options. As a production machine, the Model NV10-160 with its high throughput capability, will reduce the implant cost per wafer significantly for doses above 10 x 1015 ions/cm2. Performance patterns are now emerging as some twenty-five systems have now been shipped. This paper summarizes the more important characteristics and reviews the major design features of the NV10-160. (orig.)

  19. A high-energy, high-current ion implantation system

    Science.gov (United States)

    Rose, Peter H.; Faretra, Ronald; Ryding, Geoffery

    1985-01-01

    High current (Pre-DepTM) ion implanters, operating at 80 keV, have met a need in the semiconductor industry. For certain processes, higher energies are required, either to penetrate a surface layer or to place the dopant ion at a greater depth. The Eaton/Nova Model NV10-160 Pre-DepTM Ion Implanter has been developed to meet those special needs. Beam currents as high as 10.0 mA are available at energies up to 160 keV for routine production applications. The system has also been qualified for low current, low dose operation (1011 ions cm-2) and this unique versatility provides the Process and Equipment Engineers with a powerful new tool. The Model NV10-160 also utilizes the Nova-designed, double disk interchange processing system to minimize inactive beam time so that wafer throughputs, up to 300 wafers/h, are achievable on a routine basis. DatalockTM, a computer driven implant monitoring system and AT-4, the Nova cassette-to-cassette wafer loader, are available as standard options. As a production machine, the Model NV10-160 with its high throughput capability, will reduce the implant cost per wafer significantly for doses above 10 × 1015 ions/cm2. Performance patterns are now emerging as some twenty-five systems have now been shipped. This paper summarizes the more important characteristics and reviews the major design features of the NV10-160.

  20. Structural modification of tantalum crystal induced by nitrogen ion implantation

    Indian Academy of Sciences (India)

    A H RAMEZANI; M R HANTEHZADEH; M GHORANNEVISS; E DARABI

    2016-06-01

    This paper investigates the effect of nitrogen ion implantation on tantalum surface structure. In this experiment, nitrogen ions which had an energy of 30 keV and doses of $1 \\times 10^{17}$ to $10 \\times 10^{17}$ ions cm$^{−2}$ were used. X-ray diffraction analysis (XRD) was applied for both the metallic Ta substrate and the study of new structures that have been created through the nitrogen ion implantation. Atomic force microscopy (AFM) was also used tocheck the roughness variations prior to and also after the implantation phase. The experimental results show the formation of hexagonal tantalum nitride (TaN$_{0.43}$) in addition to the fact that by increasing the ion dose, the nitrogen atoms occupy more interstitial spaces in the target crystal. The nitride phase also seen for $3\\times 10^{17}$ and $5\\times 10^{17}$ ions cm$^{−2}$, while it disappeared for higher dose of $7\\times 10^{17}$ and $1\\times 10^{18}$ ions cm$^{−2}$. The FWHM of the dominant peak of tantalum nitride suggest the growth of the crystallite’s size, which is in agreement with the AFM results ofthe grains.

  1. Comparison of oxidation resistance of copper treated by beam-line ion implantation and plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Copper which has many favorable properties such as low cost, high thermal and electrical conductivity, as well as easy fabrication and joining is one of the main materials in lead frames, interconnects, and foils in flexible circuits. Furthermore, copper is one of the best antibacterial materials. However, unlike aluminum oxide or chromium oxide, the surface copper oxide layer does not render sufficient protection against oxidation. In this work, in order to improve the surface oxidation resistance of Cu, Al and N were introduced into copper by plasma immersion ion implantation (PIII) and beam-line ion implantation (BII). The implantation fluences of Al and N were 2 x 1017 ions cm-2 and 5 x 1016 ions cm-2, respectively. The implanted and untreated copper samples were oxidized in air at 260 deg. C for 1 h. The X-ray diffraction (XRD), scanning electron microscopy (SEM), as well as X-ray photoelectron spectroscopy (XPS) results indicate that both implantation methods can enhance the oxidation resistance of copper but to different extent. PIII is superior to BII in enhancing the oxidation resistance of copper. The effects and possible mechanisms are discussed.

  2. EPR of ion-implanted, laser-annealed silicon

    International Nuclear Information System (INIS)

    Electron paramagnetic resonance and ion backscattering measurements were made on ion-implanted, pulsed laser-annealed silicon. For phosphorus-implanted silicon (3 x 1013 200 keV P+/cm2) the electrical activity of the implanted donors is restored after laser annealing with greater than or equal to 1.8 J/cm2. Silicon made amorphous with 2 x 1015 200 keV Si+/cm2 and implanted with 3 x 1013 200 keV P+/cm2 can be restored to crystallinity after laser annealing, but electrical activity of the P was not restored due to residual defects for laser energies less than or equal to 3 J/cm2. Electrical activity can be restored, at least in part, for amorphous silicon implanted at lower energies (approx. = 50 keV). We also observed that N2 reacts with amorphous silicon surfaces to form silicon-nitride. Under laser annealing the N is redistributed and exists as an N interstitial within the implanted layer

  3. Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurin, Alexey, E-mail: kond@mailcity.com [Applied and Plasma Physics, School of Physics A28, University of Sydney, New South Wales 2006 (Australia); Bilek, Marcela [Applied and Plasma Physics, School of Physics A28, University of Sydney, New South Wales 2006 (Australia)

    2011-06-15

    A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10{sup 15} ions/cm{sup 2} was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.

  4. Suppression of tin precipitation in SiSn alloy layers by implanted carbon

    International Nuclear Information System (INIS)

    By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

  5. Suppression of tin precipitation in SiSn alloy layers by implanted carbon

    Energy Technology Data Exchange (ETDEWEB)

    Gaiduk, P. I., E-mail: gaiduk@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk (Belarus); Lundsgaard Hansen, J., E-mail: johnlh@phys.au.dk; Nylandsted Larsen, A., E-mail: anl@phys.au.dk [Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark); Bregolin, F. L., E-mail: f.lipp-bregolin@hzdr.de; Skorupa, W., E-mail: W.Skorupa@hzdr.de [Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)

    2014-06-09

    By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.

  6. Transformation of YSZ under high fluence argon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Usov, I.O. [Los Alamos National Laboratory, Los Alamos, NM (United States); Rubanov, S. [Bio21 Institute, The University of Melbourne, Melbourne (Australia); Won, J. [Division of Electron Microscopic Research, Korea Basic Science Institute, Deajeon (Korea, Republic of); Suvorova, A.A., E-mail: alexandra.suvorova@uwa.edu.au [Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, Crawley (Australia)

    2014-05-01

    In this work, we present the effect of extremely high fluence ion implantation on microstructure of single crystalline YSZ samples with three major low index orientations: (1 0 0), (1 1 0) and (1 1 1). The samples were implanted at room temperature with 150 keV Ar{sup +} ions to a fluence of 1 × 10{sup 17} Ar/cm{sup −2} corresponding to the peak damage level of ∼120 dpa and peak Ar atom concentration of ∼12 at.%. Rutherford backscattering/channeling spectrometry (RBS/C), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and associated analytical tools were used to determine the orientation dependent damage, surface morphology, and microstructure modifications of the implanted layers. Ar{sup +} ion implantation resulted in formation of severely damaged layers, which however remained crystalline. The damage peak maximum, determined by RBS/C, indicated that the fourth damage accumulation stage, previously predicted for Ar-implanted YSZ, was achieved. The (1 1 0) oriented YSZ demonstrated slightly better radiation tolerance, as observed by RBS/C, compared to the other low index orientations. Microstructural studies revealed large cavities aligned parallel to the specimen surface, which emerged in a form of circular blisters on the surface. The origin of the cavities was related to the segregation of Ar atoms into pressurized gas filled bubbles. The crystallographic anisotropy of microstructural parameters (thickness of the damages layer, surface blister density and diameter, cavity dimensions) remains uncertain.

  7. Characterization of duplex hard coatings with additional ion implantation

    Directory of Open Access Journals (Sweden)

    B. Škorić

    2012-01-01

    Full Text Available In this paper, we present the results of a study of TiN thin fi lms which are deposited by a Physical Vapour Deposition (PVD and Ion Beam Assisted Deposition (IBAD. In the present investigation the subsequent ion implantation was provided with N+2 ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of eff ects such as crystallographic orientation, morphology, topography, densifi cation of the fi lms. The evolution of the microstructure from porous and columnar grains to densel packed grains is accompanied by changes in mechanical and physical properties. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM, Atomic Force Microscope (AFM, X-ray diff raction (XRD and Energy Dispersive X-ray analysis (EDAX.

  8. An RFQ accelerator system for MeV ion implantation

    Science.gov (United States)

    Hirakimoto, Akira; Nakanishi, Hiroaki; Fujita, Hiroyuki; Konishi, Ikuo; Nagamachi, Shinji; Nakahara, Hiroshi; Asari, Masatoshi

    1989-02-01

    A 4-vane-type Radio-Frequency Quadrupole (RFQ) accelerator system for MeV ion implantation has been constructed and ion beams of boron and nitrogen have been accelerated successfully up to an energy of 1.01 and 1.22 MeV, respectively. The acceleration of phosphorus is now ongoing. The design was performed with two computer codes called SUPERFISH and PARMTEQ. The energy of the accelerated ions was measured by Rutherford backscattering spectroscopy. The obtained values agreed well with the designed ones. Thus we have confirmed the validity of our design and have found the possibility that the present RFQ will break through the production-use difficulty of MeV ion implantation.

  9. Nanocomposite formed by titanium ion implantation into alumina

    International Nuclear Information System (INIS)

    Composites of titanium nanoparticles in alumina were formed by ion implantation of titanium into alumina, and the surface electrical conductivity measured in situ as the implantation proceeded, thus generating curves of sheet conductivity as a function of dose. The implanted titanium self-conglomerates into nanoparticles, and the spatial dimensions of the buried nanocomposite layer can thus be estimated from the implantation depth profile. Rutherford backscattering spectrometry was performed to measure the implantation depth profile, and was in good agreement with the calculated profile. Transmission electron microscopy of the titanium-implanted alumina was used for direct visualization of the nanoparticles formed. The measured conductivity of the buried layer is explained by percolation theory. We determine that the saturation dose, φ0, the maximum implantation dose for which the nanocomposite material still remains a composite, is φ0 = 2.2 × 1016 cm−2, and the corresponding saturation conductivity is σ0 = 480 S/m. The percolation dose φc, below which the nanocomposite still has basically the conductivity of the alumina matrix, was found to be φc = 0.84 × 1016 cm−2. The experimental results are discussed and compared with a percolation theory model

  10. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n+-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 1016 cm-2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  11. Large area buried nanopatterning by broad ion implantation without any mask or direct writing

    OpenAIRE

    Karmakar, Prasanta; Satpati, Biswarup

    2013-01-01

    We have introduced here a simple, single step and cost effective broad ion beam technique for preparation of nanoscale electronic, magnetic, optical and mechanical devices without the need of resist, mask, or focused electron and ion beams. In this approach, broad beam ion implantation of desired atom on a prefabricated ion beam patterned surface promotes site selective deposition by adjusting the local angle of ion implantation. We show that implantation of Fe ions on an O+ induced pre fabri...

  12. Ion implantation induced by Cu ablation at high laser fluence

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Mezzasalma, A. M.; Gammino, S.; Badziak, J.; Parys, P.; Wolowski, J.; Láska, Leoš; Franco, G.

    2006-01-01

    Roč. 252, - (2006), s. 8533-8538. ISSN 0169-4332 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : plasma laser * laser ablation * ion implantation * RBS analysis * AES analysis Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.436, year: 2006

  13. Surface ion implantation induced by laser-generated plasmas

    Czech Academy of Sciences Publication Activity Database

    Giuffrida, L.; Torrisi, L.; Gammino, S.; Wolowski, J.; Ullschmied, Jiří

    2010-01-01

    Roč. 165, 6-10 (2010), s. 534-542. ISSN 1042-0150. [International Workshop on Pulsed Plasma Laser Ablation (PPLA)/4./. Monte Pieta, Messina, 18.06.2009-20.06.2009] Institutional support: RVO:61389021 Keywords : laser ablation * laser plasma * ion implantation * RBS analysis Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.660, year: 2010

  14. Extreme Precipitation Strengthening in Ion-Implanted Nickel

    International Nuclear Information System (INIS)

    Precipitation strengthening of nickel was investigated using ion-implantation alloying and nanoindentation testing for particle separations in the nanometer range and volume fractions extending above 10O/O. Ion implantation of either oxygen alone or oxygen plus aluminum at room temperature was shown to produce substantial strengthening in the ion-treated layer, with yield strengths near 5 GPa in both cases. After annealing to 550''C the oxygen-alone layer loses much of the benefit, with its yield strength reduced to 1.2 GP but the dual ion-implanted layer retains a substantially enhanced yield strength of over 4 GPa. Examination by transmission electron f microscopy showed very fine dispersions of 1-5 nm diameter NiO and y-A1203 precipitates in the implanted layers before annealing. The heat treatment at 550''C induced ripening of the NiO particles to sizes ranging from 7 to 20 nm, whereas the more stable -A1203 precipitates were little changed. The extreme strengthening we observe is in semiquantitative agreement with predictions based on the application of dispersion-hardening theory to these microstructure

  15. Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

    Science.gov (United States)

    Liang, J. H.; Hsieh, H. Y.; Wu, C. W.; Lin, C. M.

    2015-12-01

    This study investigated surface blistering characteristics due to H and He ions co-implanted in silicon at room temperature. The H and He ion energies were 40 and 50 keV, respectively, so that their depth profiles were similar. The total implantation fluence for the H and He ions was 5 × 1016 cm-2 under various fluence fractions in the H ions. The implantation sequences under investigation were He + H and H + He. Dynamic optical microscopy (DOM) was employed in order to dynamically analyze surface blistering characteristics. This study used DOM data to construct so-called time-temperature-transformation (T-T-T) curves to easily predict blistering and crater transformation at specific annealing times and temperatures. The results revealed that the curves of blister initialization, crater initialization, and crater completion in the He + H implant occurred at a lower annealing temperature but with a longer annealing time compared to those in the H + He implant. Furthermore, the threshold annealing temperatures for blister and crater formation in the He + H implant were lower than they were in the H + He implant. The size distributions of the blisters and craters in the He + H implant extended wider than those in the H + He implant. In addition, the He + H implant exhibited larger blisters and craters compared to the ones in the H + He implant. Since the former has a higher percentage of exfoliation area than the latter, it is regarded as the more optimal implantation sequence.

  16. Physicochemical and tribological characterization of titanium or titanium plus carbon implanted AISI M2 steel

    International Nuclear Information System (INIS)

    AISI M2 steel samples were implanted with 110 keV titanium ions at fluences ranging from 5x1016 to 4x1017Ti cm-2. Titanium plus carbon dual implantation was also studied. Titanium distribution profiles were determined using the 48Ti(p,γ)49V resonant nuclear reaction. The incorporation of carbon and oxygen from residual gases was studied as a function of titanium fluence and residual pressure using nuclear backscattering spectrometry at 5.7 and 7.5 MeV He+ ion energies respectively. A competition phenomenon between carbon and oxygen incorporation is pointed out. Analysis of the phases formed was performed using conversion electron Moessbauer spectroscopy. Fe(Ti) solid solution, a-FexTi100-x and superficial a-Fe-Ti-C amorphous phases were identified. Tribological tests involving a ball (Al2O3 or 52100) and disc contact were performed to characterize the friction behaviour of the implanted surface. It is shown that titanium plus carbon implantation leads to a reduction in the friction coefficient. The wear tracks and debris were examined using scanning electron microscopy and electron microprobe cartography. For the two types of balls a reduction in the wear track width was observed together with oxidation of the wear debris. The tribological improvement observed depends not only on the presence of the superficial a-Fe-Ti-C amorphous layer but also on the surface chemical reaction during the wear process. (orig.)

  17. Biological effect of nitrogen ion implantation on stevia

    International Nuclear Information System (INIS)

    Dry seed of stevia were implanted by 35∼150 keV nitrogen ions with various doses. The biological effect in M1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam energy and dose added, but there was on significant linear regression relationship between ion dose and aberration rate. The results indicated the seedling height reduced with the increasing of dose for ion beam. The biological effect of nitrogen ion beam on M1 stevia was lower than that of γ-rays. (6 refs., 1 fig., 4 tabs.)

  18. Ion implant rapid thermal anneal international round robin

    Science.gov (United States)

    Yarling, C. B.; Andrew Keenan, W.

    1989-02-01

    The Greater Silicon Valley Implant Users' Group (GSVIUG) has conducted two round robin evaluations to determine the uniformity and repeatability available on commercial rapid thermal processing (RTP) equipment when processing implanted wafers. Twelve RTF vendors have participated, including AET Addax, A.G. Associates, Dainippon Screen, Eaton, Koyo Lindberg, Nanosil, Nichiden Machinery, Peak Systems, Process Products, Tamarack Scientific, Thermco/TEL, and Varian Associates. Sheet resistance contour maps were used to compare sheet resistance, uniformity and repeatability of each vendor. The first round robin was conducted using 100 mm wafers, implanted with high doses (1 × 10 15 and 1 × 10 6 ions/cm 2) of 100 keV boron and arsenic. The time and temperature ( t- T) of the anneal was left to the individual vendors to provide the best repeatability and uniformity for their equipment. The results indicate that excellent repeatability and uniformity are possible using RTP, but no single vendor was superior for all implant conditions. The second round robin was done using 150 mm wafers implanted with 5 × 10 15 ions/cm 2 arsenic at 80 keV. Each vendor was given four wafers to anneal at 1100 °C for 5, 10, 15 and 20 s. Results indicate that each vendor has a characteristic pattern, that much work needs to be done to standardize the t- T measurement, and that the uniformity on 150 mm wafers requires work by some vendors.

  19. Factors affecting the ion beam implantation in silicon

    International Nuclear Information System (INIS)

    The factors affecting the ion beam implantation in silicon have been studied using boron, phosphorus, oxygen, and argon ions having energy range 0.5 ke V-200 ke V. It was found that the range of the ions in silicon increases with the increase of their energy and decreases with the increase of their masses. The ionization process is found to be the main process for causing damage in the silicon matrix whether it is produced by the accelerated ions or by the recoiled silicon atoms. The magnitude of ionization in silicon is found to be inversely proportional to the mass of ions. Ionization produced by ions or recoils shows different contributions to the damage depending on the mass of ions where the ions energy loss to ionization decreases from 70% to 23% as the mass is increased from 11 for boron (B) to 40 for argon (Ar). Its magnitude, as produced by ions, is found to decrease with the increase of their masses. Its value is observed to increase in a complementary way with the mass increase. Ions energy loss to vacancies and phonons is found to be independent of the mass of ions. Their values decrease sharply to a minimum within the energy range 0.5-5ke V and levels off at further energy increase up to 200 Ke V. Recoils energy loss to vacancy and phonon production is found to increase with the increase of mass and energy of the accelerated ions

  20. Mass spectrometry improvement on an high current ion implanter

    International Nuclear Information System (INIS)

    The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source in a high current implanter is described. The spectrometry system uses two signals (x–y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. The developed system uses a PC to control the displaying of the extracted beam mass spectrum, and also recording of all data acquired for posterior analysis. The operator uses a LabVIEW code that enables the interfacing between an I/O board and the ion implanter. The experimental results from an ion implantation experiment are shown.

  1. Methods for obtaining a uniform volume concentration of implanted ions

    International Nuclear Information System (INIS)

    Three simple practical methods of irradiations with high energy particles providing the conditions for obtaining a uniform volume concentration of the implanted ions in the massive samples are described in the present paper. Realization of the condition of two-sided irradiation of a plane sample during its rotation in the flux of the projectiles is the basis of the first method. The use of free air as a filter with varying absorbent ability due to movement of the irradiated sample along ion beam brought to the atmosphere is at the basis of the second method of uniform ion alloying. The third method for obtaining a uniform volume concentration of the implanted ions in a massive sample consists of irradiation of a sample through the absorbent filter in the shape of a foil curved according to the parabolic law moving along its surface. The first method is the most effective for obtaining a great number of the samples, for example, for mechanical tests, the second one - for irradiation in different gaseous media, and the third one - for obtaining high concentrations of the implanted ions under controlled (regulated) thermal and deformation conditions. 2 refs., 7 figs

  2. Resonance ionization of holmium for ion implantation in microcalorimeters

    Science.gov (United States)

    Schneider, F.; Chrysalidis, K.; Dorrer, H.; Düllmann, Ch. E.; Eberhardt, K.; Haas, R.; Kieck, T.; Mokry, C.; Naubereit, P.; Schmidt, S.; Wendt, K.

    2016-06-01

    The determination of the electron neutrino mass by calorimetric measurement of the 163 Ho electron capture spectrum requires ultra-pure samples. Several collaborations, like ECHo or HOLMES, intend to employ microcalorimeters into which 163 Ho is implanted as an ion beam. This makes a selective and additionally very efficient ion source for holmium mandatory. For this purpose, laser resonance ionization of stable holmium 165 Ho was studied, using a three step excitation scheme driven by pulsed Ti:sapphire lasers. Five measurements with sample sizes of 1014 and 1015 atoms were performed for the efficiency investigation. In average, an excellent ionization efficiency of 32(5) % could be shown, demonstrating the suitability for ion beam implantation.

  3. High-energy ion implantation in polymer films

    International Nuclear Information System (INIS)

    Results of experimental and theoretical studies on gas selective properties of polyvinyltrimethylsilane (PVTMS) under bombardment with 50-150 keV C+ and Ar+ ions with doses of 5 x 1014-1016 cm-2 are presented. It was found that permeability and selectivity for various gases change essentially under high-energy irradiation. This effect depends on ion type and energy, implantation dose, and is conditioned by peculiarities of the interaction of the ion-polymer system and processes of defect formation and excitation of the electronic subsystem. (Author)

  4. Cooperative emission in ion implanted Yb:YAG waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, G V; Desirena, H; De la Rosa, E [Centro de Investigaciones en Optica, Loma del Bosque 115, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico); Flores-Romero, E; Rickards, J; Trejo-Luna, R [Instituto de Fisica, UNAM, Apartado Postal 20364, 01000 Mexico, D. F. (Mexico); Marquez, H, E-mail: gvvazquez@cio.mx [Departamento de Optica, CICESE, Km 107 Carr. Tijuana-Ensenada, 22860 Ensenada, B. C. (Mexico)

    2011-01-01

    In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb{sup 3+} ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm{sup 3+} and Er{sup 3+} traces. The results include absorption and emission curves as well as decay time rates.

  5. Evidence of light guiding in ion-implanted diamond

    CERN Document Server

    Lagomarsino, S; Bosia, F; Vannoni, M; Calusi, S; Giuntini, L; Massi, M

    2016-01-01

    We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the study of the multi-modal structure of the propagating electromagnetic field. The possibility of defining optical and photonic structures by direct ion writing opens a range of new possibilities in the design of quantum-optical devices in bulk single crystal diamond.

  6. Cooperative emission in ion implanted Yb:YAG waveguides

    International Nuclear Information System (INIS)

    In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb3+ ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm3+ and Er3+ traces. The results include absorption and emission curves as well as decay time rates.

  7. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C.M.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia); Leech, P.L. [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1996-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  8. The compaction of fused silica resulting from ion implantation

    International Nuclear Information System (INIS)

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x1012 - 6x10l6 ions/cm2), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than ∼1015 ions/cm2. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from ∼0.1-0.2 μ to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs

  9. Niobium oxide thin films formed by plasma immersion oxygen ion implantation

    International Nuclear Information System (INIS)

    In analogy to conventional beam-line ion implantation, plasma immersion ion implantation can be combined with a deposition technique to an ion assisted coating process. The structure and composition of a coating and its interface to the substrate can be modified by ion implantation. By means of electron beam evaporation and oxygen plasma immersion ion implantation niobium oxide films were prepared at low substrate temperatures (< 200 C). The film composition and thickness were determined by Rutherford backscattering spectrometry. The results show that oxygen plasma immersion ion implantation leads to incorporation of oxygen into niobium in several steps, corresponding to niobium oxide phases with different stoichiometries. By contrast to conventional beam-line ion implantation at low pressures, two channels for oxidation can be distinguished, ion implantation of high-energy species and radiation enhanced in-diffusion of low-energy species from the plasma. The latter is driven by thermodynamic forces. (orig.)

  10. Doping of silicon carbide by ion implantation; Dopage du carbure de silicium par implantation ionique

    Energy Technology Data Exchange (ETDEWEB)

    Gimbert, J

    1999-03-04

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  11. Improvement of graphene quality synthesized by cluster ion implantation

    International Nuclear Information System (INIS)

    Graphene was prepared by negative C4 cluster ion implantation at 5 keV/atom followed by vacuum thermal annealing and cooling. The surface morphology and structure of samples were studied by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. Improvement of the graphene quality was realized by optimization of the post thermal processes. 1–2 layer graphene was obtained with I2D/IG ratio of 1.43 and ID/IG ratio of 0.07 at the implantation dose of 12 × 1015 atoms/cm2 and annealed at 900 °C followed by cooling at 20 °C/min

  12. Copper nanoparticles synthesized in polymers by ion implantation

    DEFF Research Database (Denmark)

    Popok, Vladimir; Nuzhdin, Vladimir; Valeev, Valerij; Stepanov, Andrei

    2015-01-01

    Polymethylmethacrylate (PMMA) and polyimide (PI) samples are implanted by 40 keV Cu+ ions with high fluences in order to synthesize copper nanoparticles in shallow polymer layers. The produced metal/polymer nanocomposites are studied using atomic force and scanning electron microscopies as well as...... optical transmission spectroscopy. It is found that copper nanoparticles nucleation and growth are strongly fluence dependent as well as they are affected by the polymer properties, in particular, by radiation stability yielding different nanostructures for the implanted PI and PMMA. Shallow synthesized...

  13. Stoichiometric titanium dioxide ion implantation in AISI 304 stainless steel for corrosion protection

    Science.gov (United States)

    Hartwig, A.; Decker, M.; Klein, O.; Karl, H.

    2015-12-01

    The aim of this study is to evaluate the applicability of highly chemically inert titanium dioxide synthesized by ion beam implantation for corrosion protection of AISI 304 stainless steel in sodium chloride solution. More specifically, the prevention of galvanic corrosion between carbon-fiber reinforced plastic (CFRP) and AISI 304 was investigated. Corrosion performance of TiO2 implanted AISI 304 - examined for different implantation and annealing parameters - is strongly influenced by implantation fluence. Experimental results show that a fluence of 5 × 1016 cm-2 (Ti+) and 1 × 1017 cm-2 (O+) is sufficient to prevent pitting corrosion significantly, while galvanic corrosion with CFRP can already be noticeably reduced by an implantation fluence of 5 × 1015 cm-2 (Ti+) and 1 × 1016 cm-2 (O+). Surface roughness, implantation energy and annealing at 200 °C and 400 °C show only little influence on the corrosion behavior. TEM analysis indicates the existence of stoichiometric TiO2 inside the steel matrix for medium fluences and the formation of a separated metal oxide layer for high fluences.

  14. Rapid thermal process-induced recombination centers in ion implanted silicon

    Science.gov (United States)

    Eichhammer, W.; Hage-Ali, M.; Stuck, R.; Siffert, P.

    1990-04-01

    This work presents direct evidence for a correlation between rapid thermal process-induced recombination centers and co-implanted metallic impurities in ion implanted silicon. Experimental evidence includes the dose dependence of the minority carrier diffusion length measured by the SPV technique, SIMS and RBS analysis of high-dose implantations which show the presence of heavy metals, the dependence of the final diffusion lengths on the mass of the implanted ions, as well as the successful modification of an implantation equipment.

  15. Sources for Low Energy Extreme of Ion Implantation

    International Nuclear Information System (INIS)

    A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past four and a half years. The ultimate goal is to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has resulted in record steady state output currents of higher charge state Antimony and Phosphorous ions: P2+(8.6 pmA), P3+(1.9 pmA), and P4+(0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. During the past year the effort was channeled towards low energy implantation, for which the effort involved molecular ions and a novel plasmaless/gasless deceleration method. To date, 3 emA of positive Decaborane ions were extracted at 14 keV and a smaller current of negative Decaborane ions were also extracted. Additionally, a Boron fraction of over 70% was extracted from a Bernas-Calutron ion source.

  16. Surface treatment of dental implants with high- power pulsed ion beams

    International Nuclear Information System (INIS)

    The objective of the present research is development of HPPIB technology for surface processing of compact components with a complex shape. The surface state of the dental implants from titanium alloys before and after irradiation and long time operation was investigated by Auger electron spectroscopy, scanning electron microscopy, X-ray structural analysis, optical metallography methods. It is shown that the homogeneous state in the surface layer of titanium alloys is formed due to the irradiation (carbon ions and protons, energy of ions is equal to 300 keV, density of ion energy in a pulse achieves 1-5 J/cm2). This state is characterized by a low amount of the impurities and a fine dispersion structure formed as a result of high speed crystallization. Thus, HPPIB irradiation of the dental implants leads to formation of developed micro relief and the decrease of impurities content on the surface. As a result, this treatment allows one to achieve a good cohesion between the implants and a body tissue. The latter allows the conclusion that biocompatibility of the dental titanium implants produced by can be improved using HPPIB treatment

  17. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    International Nuclear Information System (INIS)

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased (p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

  18. Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Nitrogen was implanted in (0 0 1) silicon wafers using 12 kV pulses in a glow-discharge plasma immersion ion implantation (PIII) system and at 35 keV in an electron-cyclotron-resonance (ECR) PIII facility. An implantation depth of 80 nm and a retained dose of approximately 3x1017 cm-2 were found, for both samples, from the nitrogen Auger profiles. Reciprocal space maps (RSMs) around the (0 0 4) and (1 1 3) Si lattice points were measured for the implanted and unimplanted Si wafers, using the high-resolution X-ray diffractometer in the triple axis configuration. An asymmetry in the reciprocal space coordinate Qz (perpendicular to the sample surface) indicates that the implanted atoms force an increase in the Si lattice parameter in this direction. A broadening in the Qx direction (parallel to the sample surface) was also observed, but with a less pronounced effect. For the sample implanted with higher energy, the shape of the map indicates a higher disorder in the crystal structure

  19. Cluster Ion Implantation in Graphite and Diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2014-01-01

    Cluster ion beam technique is a versatile tool which can be used for controllable formation of nanosize objects as well as modification and processing of surfaces and shallow layers on an atomic scale. The current paper present an overview and analysis of data obtained on a few sets of graphite and...

  20. Mobile ions on carbonate surfaces

    Science.gov (United States)

    Kendall, Treavor A.; Martin, Scot T.

    2005-07-01

    Surface ions move during the dissolution and growth of minerals. The present study investigates the density and the mobility of surface ions and the structure of the adsorbed water layer with changes in relative humidity (RH). The time evolution of the polarization force, which is induced by an electrically biased tip of an atomic force microscope, shows that the density and the mobility of surface ions increase with rising humidity, a finding which is consistent with increasing surface hydration. A marked change in the observations above 55% RH indicates a transition from a water layer formed by heteroepitaxial two-dimensional growth at low RH to one formed by multilayer three-dimensional growth at high RH. A comparison of the results of several rhombohedral carbonates ( viz. CaCO 3, FeCO 3, ZnCO 3, MgCO 3, and MnCO 3) shows that a long relaxation time of the polarization force at high RH is predictive of a rapid dissolution rate. This finding is rationalized by long lifetimes in terrace positions and hence greater opportunities for detachment of the ion to aqueous solution (i.e., dissolution). Our findings on the density and the mobility of surface ions therefore help to better constrain mechanistic models of hydration, ion exchange, and dissolution/growth.

  1. Suppression of tin precipitation in SiSn alloy layers by implanted carbon

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne;

    2014-01-01

    By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumul......By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed...... the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation......-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued....

  2. Material synthesis for silicon integrated-circuit applications using ion implantation

    Science.gov (United States)

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  3. Hollow cathode ion source for application to an implanter

    International Nuclear Information System (INIS)

    A hollow cathode ion source has been studied in order to improve the life-time of an ion source for an ion implanter. Both volatile and refractory elements are shown to be ionized using two types of discharge state of the hollow cathode namely hot and cold cathode discharge. The life-time of LaB6 as the hot cathode is more than 150 h and the ion beam currents reach more than 10 mA cm-2 at the extraction voltage of 10 kV. For the cold cathode operation, stable currents of approx. 40 to 70 μA are extracted of refractory metal ions such as W and Mo. (author)

  4. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    International Nuclear Information System (INIS)

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm−2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined

  5. High-energy, high-current ion implantation system

    Energy Technology Data Exchange (ETDEWEB)

    Rose, P.H.; Faretra, R.; Ryding, G. (Eaton Corp., Beverly, MA (USA). Ion Beam Systems Div.)

    1985-01-01

    High current (Pre-Depsup(TM)) ion implanters, operating at 80 keV, have met a need in the semiconductor industry. For certain processes, higher energies are required, either to penetrate a surface layer or to place the dopant ion at a greater depth. The Eaton/Nova Model NV10-160 Pre-Dpsup(TM) Ion Implanter has been developed to meet those special needs. Beam currents as high as 10.0 mA are available at energies up to 160 keV for routine production applications. The system has also been qualified for low current, low dose operation (10/sup 11/ ions cm/sup -2/) and this unique versatility provides the Process and Equipment Engineers with a powerful new tool. The Model NV10-160 also utilizes the Nova-designed, double disk interchange processing system to minimize inactive beam time so that wafer throughputs, up to 300 wafers/h, are achievable on a routine basis. Datalocksup(TM), a computer driven implant monitoring system and AT-4, the Nova cassette-to-cassette wafer loader, are available as standard options. As a production machine, the Model NV10-160 with its high throughput capability, will reduce the implant cost per wafer significantly for doses above 10 x 10/sup 15/ ions/cm/sup 2/. Performance patterns are now emerging as some twenty-five systems have now been shipped. This paper summarizes the more important characteristics and reviews the major design features of the NV10-160.

  6. Effects of ion beam implantation on pollen germination and pollen tube growth of cedrus deodara

    International Nuclear Information System (INIS)

    Effects of ion beam implantation on pollen germination and pollen tube growth of Cedrus deodara were investigated by the laser confocal microscopy technique (LSCM). The results showed that the low dose ion implantation (1x1015 ions/cm2) did not affect the germination of the pollen. The doses of 3x1015 ions/cm2 and 5x1015 ions/cm2 implantation could significantly promote the germination. But the high dose ion implantation (equal to or over 7x1015 ions/cm2) obviously suppressed the pollen to germinate. The effects on elongation and morphological characters of the pollen tube caused by the ion beam implantation were observed. The damage degree of the pollen tube increased with the increase of ion implantation dose. (authors)

  7. ADFA/ANU 150 keV radioactive ion implanter

    Energy Technology Data Exchange (ETDEWEB)

    Wei, J.X.; Chaplin, D.H.; Hutchinson, W.D.; Stewart, G.A. [University College, UNSW, Sydney, NSW (Australia). School of Physics; Byrne, A.P. [Australian National University, Canberra, ACT (Australia). Department of Nuclear Physics, RSPhysSE and Department of Physics, the Faculties

    1998-12-31

    Full text: As foreshadowed at the 10th Australian Conference on Nuclear Techniques of Analysis (Byrne et al), the collaborative project to build a radioactive ion implanter, within the custom designed Radiation Laboratories at Australian Defence Force Academy (ADFA), has recently led to the initial commissioning tests of the instrument described in that report. Primary aims are to serve the hyperfine interactions community interested in Materials Science with particular emphasis on magnetic and semiconductor materials. 2.8 day {sup 111}In will be the first radioactive probe implanted following optimization of beam transport with stable indium. The implanted {sup 111}In samples will be prepared for both time-differential, gamma-gamma, PAC studies at ANU and bruteforce NMRON spectroscopies using the top loading dilution refrigerator at ADFA. In this paper we provide further information on the capabilities of the instrument and the results of the initial commissioning tests

  8. Lattice damage in ion-implanted silicon-germanium alloys

    International Nuclear Information System (INIS)

    The damage produced in Si1-xGex alloys (0≤x≤1) by implantation of 70--100 keV 30Si+ has been measured as a function of temperature and fluence by ion channeling. For all compositions, the damage efficiency decreased sharply as the implant temperature was increased between room temperature and 150 degrees C. Furthermore, the damage efficiency in alloys of intermediate compositions (0.34≤x≤0.5) exceeds that in Ge, especially at elevated temperatures, despite the larger cascade energy density in Ge. It is shown that this behavior can be described based on a model in which the point-defect mobility is the dominant factor controlling damage retention, rather than the cascade energy density. This approach provides a framework for understanding other temperature-dependent phenomena related to damage growth in Si-Ge alloys including dose-rate effects and damage saturation in MeV implantation

  9. Nitrogen ion implantation of silicon in dense plasma focus

    International Nuclear Information System (INIS)

    A low energy (1.45 kJ) Mather type plasma focus device is used for nitrogen ion implantation in mono-crystalline silicon. The silicon specimens are exposed to different number of focus shots by placing the targets in front of the anode at a fixed distance. Raman spectroscopy and X-ray diffraction are employed to characterize the implanted specimens. The results indicate that mono-crystalline silicon transforms into amorphous structure through micro-crystalline phase on increasing the implantation dose. Further irradiation of the specimens results in the formation of amorphous Si3N4 layers. High temperature annealing in argon ambient transforms the amorphous Si3N4 into β-Si3N4

  10. Active waveguides by low-fluence carbon implantation in Nd3+-doped fluorophosphate glasses

    Science.gov (United States)

    Liu, Chun-Xiao; Luo, Zhe-Yuan; Li, Yu-Wen; Chen, Meng; Xu, Jun; Fu, Li-Li; Yu, Ke-Han; Zheng, Rui-Lin; Zhou, Zhi-Guang; Li, Wei-Nan; Guo, Hai-Tao; Lin, She-Bao; Wei, Wei

    2016-01-01

    A planar waveguide in the Nd3+-doped fluorophosphate glass is fabricated by a 6.0 MeV C3+ ion implantation at a low-fluence of 1.0 × 1014 ions/cm2. The fluence is close to that in semiconductor industry. The dark mode spectra are recorded by a model 2010 prism coupler. The energy losses during the implantation process and the refractive index profile of the waveguide are simulated by the SRIM 2010 code and the reflectivity calculation method (RCM), respectively. The near-field light intensity profile and the propagation loss of the waveguide are measured by an end-face coupling system. The two-dimensional (2D) modal profile of transverse electric (TE) mode for the fabricated waveguide is calculated by the finite difference beam propagation method (FD-BPM). The results of microluminescence and optical absorption reveal that the spectroscopic characteristics of the Nd3+-doped fluorophosphate glass are nearly unaffected by the carbon ion implantation process. This work suggests that the carbon-implanted Nd3+-doped fluorophosphate glass waveguide is a promising candidate for integrated active devices.

  11. Influence of ion species ratio on grid-enhanced plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    Wang Jiu-Li; Zhang Gu-Ling; Liu Yuan-Fu; Wang You-Nian; Liu Chi-Zi; Yang Si-Ze

    2004-01-01

    @@ Grid-enhanced plasma source ion implantation (GEPSII) is a newly proposed technique to modify the inner-surface properties of a cylindrical bore. In this paper, a two-ion fluid model describing nitrogen molecular ions N2+ and atomic ions N+ is used to investigate the ion sheath dynamics between the grid electrode and the inner surface of a cylindrical bore during the GEPSII process, which is an extension of our previous calculations in which only N2+ was considered.Calculations are concentrated on the results of ion dose and impact energy on the target for different ion species ratios in the core plasma. The calculated results show that more atomic ions N+ in the core plasma can raise the ion impact energy and reduce the ion dose on the target.

  12. Mechanical properties of ion-implanted tungsten-5 wt% tantalum

    International Nuclear Information System (INIS)

    Ion implantation has been used to simulate neutron damage in W-5wt%Ta alloy manufactured by arc melting. Implantations were carried out at damage levels of 0.07, 1.2, 13 and 33 displacements per atom (dpa). The mechanical properties of the ion-implanted layer were investigated by nanoindentation. The hardness increases rapidly from 7.3 GPa in the unimplanted condition to 8.8 GPa at 0.07 dpa. Above this damage level, the increase in hardness is lower, and the hardness change saturates by 13 dpa. In the initial portion of the load-displacement curves, the indentations in unimplanted material show a large 'initial pop-in' corresponding to the onset of plasticity. This is not seen in the implanted samples at any doses. The change in plasticity has also been studied using the nanoindenter in scanning mode to produce a topographical scan around indentations. In the unimplanted condition there is an extensive pile-up around the indentation. At damage levels of 0.07 and 1.2 dpa the extent and height of pile-up are much less. The reasons for this are under further investigation.

  13. Mechanical properties of ion-implanted tungsten-5 wt% tantalum

    Science.gov (United States)

    Armstrong, D. E. J.; Wilkinson, A. J.; Roberts, S. G.

    2011-12-01

    Ion implantation has been used to simulate neutron damage in W-5wt%Ta alloy manufactured by arc melting. Implantations were carried out at damage levels of 0.07, 1.2, 13 and 33 displacements per atom (dpa). The mechanical properties of the ion-implanted layer were investigated by nanoindentation. The hardness increases rapidly from 7.3 GPa in the unimplanted condition to 8.8 GPa at 0.07 dpa. Above this damage level, the increase in hardness is lower, and the hardness change saturates by 13 dpa. In the initial portion of the load-displacement curves, the indentations in unimplanted material show a large 'initial pop-in' corresponding to the onset of plasticity. This is not seen in the implanted samples at any doses. The change in plasticity has also been studied using the nanoindenter in scanning mode to produce a topographical scan around indentations. In the unimplanted condition there is an extensive pile-up around the indentation. At damage levels of 0.07 and 1.2 dpa the extent and height of pile-up are much less. The reasons for this are under further investigation.

  14. Optical Property of SiC Thin Films Implanted by 120 keV N Ions

    Institute of Scientific and Technical Information of China (English)

    SongYin; JinYunfan; WangZhiguang; ZhangChonghong; ZhaoZhimin; DuanJinlai

    2003-01-01

    SiC films on Si substrates were deposited by RF co-sputtering of the Si and C compound target and implanted by 120 keV N ions with MEVVA ion current. The structure, optical property were studied by Fourier transform infrared spectrum (FTIR) and photoluminescence (PL) spectroscopy. The studied results indicated that carbon nitride single bond, double bond and triangle bond (Fig.l) are produced in the SiC film implanted. Its luminescence intensity depends strongly on the quantity of N ions. From the Fig.2 we can clearly observed significant PL peak centred at 365 nm. Because SiC is an indirect energy band clearance semiconductor material, its transition luminescence has to phonon participant. This is a binary process, luminescence rate is small, annealed samples appear crystal and include more nano-size SiC particulate. Based on the quantum limit effect, these nano-particulates not only increase energy band width but also energy band structure becomes direct energy band clearance. N ions implanted enhanced composite efficiency of deep irradiation center in energy band clearance and luminescence center moves towards blue light.

  15. 4-rod RFQ linac for ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fujisawa, Hiroshi; Hamamoto, Nariaki; Inouchi, Yutaka [Nisshin Electric Co. Ltd., Kyoto (Japan)

    1997-03-01

    A 34 MHz 4-rod RFQ linac system has been upgraded in both its rf power efficiency and beam intensity. The linac is able to accelerate in cw operation 0.83 mA of a B{sup +} ion beam from 0.03 to 0.91 MeV with transmission of 61 %. The rf power fed to the RFQ is 29 kW. The unloaded Q-value of the RFQ has been improved approximately 61 % to 5400 by copper-plating stainless steel cooling pipes in the RFQ cavity. (author)

  16. Surface modification of ion implanted ultra high molecular weight polyethylene

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jingsheng; Zhu Fuying; Pan Haochang; Cao Jianqing; Zhu Dezhang E-mail: dezhang_zhu@hotmail.com; Xu Hongjie; Cai Qing; Shen Jingen; Chen Lihua; He Zhengrui

    2000-06-02

    The surface modification has been studied for the ultra high molecular weight polyethylene (UHMWPE) implanted by 80 keV N{sub 2}{sup +}, C{sub 3}H{sub 8}{sup +} (40 keV N{sup +}, 22 keV C{sup +}) with fluences ranging from 1x10{sup 14} to 5x10{sup 15} ions/cm{sup 2}. Elastic recoil detection (ERD) and X-ray photoelectron spectroscopy (XPS) have been employed to characterize the modified surface of the samples. ERD results show that the high energy edge of ERD spectra shifts in the lower energy direction with the increase of implantation fluency, indicating that a hydrogen deficient surface layer is formed after implantation. XPS result shows that injected nitrogen atoms assist in crosslinking by forming chemical bonds with the polymer chains. KyowA's DF-PM reciprocating tester has been used to measure the wear property before and after implantation. The results show that the wear-resistance of samples after N{sub 2}{sup +}, C{sub 3}H{sub 8}{sup +} implantation has been improved by 68 and 47.5 times, respectively. Some interpretations are given to explain the observed phenomena.

  17. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 12000C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author)

  18. Ion beam analysis of Cs-implanted zirconia and spinel

    International Nuclear Information System (INIS)

    Fission products (Cs) were introduced into yttria-stabilized zirconia (YSZ) and magnesium aluminate spinel (MAS) single crystals by room temperature ion implantation. The effect of high-temperature annealing on the depth distribution of implanted species and the surface homogeneity of crystals were investigated by the combination of AFM and RBS using a macro- and a micro-ion beam. The diffusion and release of Cs involve mechanisms which depend on the material and Cs concentration. In YSZ Cs desorbs out of the crystal at lower temperature (∼550 deg. C) than in MAS (∼850 deg. C). In YSZ the surface of the sample remains unaltered when Cs desorption occurs, whereas in MAS Cs desorption is accompanied by the exfoliation of the sample surface

  19. Nanoclustering in Silicon Induced by Oxygen Ions Implanted

    Directory of Open Access Journals (Sweden)

    D. Manno

    2011-11-01

    Full Text Available We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has been used. The surface modifications and the structure of nanoclusters are investigated. The topographic images, obtained by scanning tunnelling microscope showed that the surface is covered with a dense array of tetragonal nanostructures oriented with respect to the substrate. Raman spectroscopy data allowed us to estimate an average cluster size of about 50 nm. Resistivity and Hall effect measurements evidenced that the electron transport in the implanted silicon samples is affected by the nanoclusters array and it could be explained by thermally activated hopping between localized states.

  20. Highly antibacterial UHMWPE surfaces by implantation of titanium ions

    International Nuclear Information System (INIS)

    The spreading of pathogens represents a serious threat for human beings. Consequently, efficient antimicrobial surfaces are needed in order to reduce risks of contracting severe diseases. In this work we present the first evidences of a new technique to obtain a highly antibacterial Ultra High Molecular Weight Polyethylene (UHMWPE) based on a non-stoichiometric titanium oxide coating, visible-light responsive, obtained through ion implantation

  1. Highly antibacterial UHMWPE surfaces by implantation of titanium ions

    Science.gov (United States)

    Delle Side, D.; Nassisi, V.; Giuffreda, E.; Velardi, L.; Alifano, P.; Talà, A.; Tredici, S. M.

    2014-07-01

    The spreading of pathogens represents a serious threat for human beings. Consequently, efficient antimicrobial surfaces are needed in order to reduce risks of contracting severe diseases. In this work we present the first evidences of a new technique to obtain a highly antibacterial Ultra High Molecular Weight Polyethylene (UHMWPE) based on a non-stoichiometric titanium oxide coating, visible-light responsive, obtained through ion implantation.

  2. Highly antibacterial UHMWPE surfaces by implantation of titanium ions

    Energy Technology Data Exchange (ETDEWEB)

    Delle Side, D., E-mail: domenico.delleside@le.infn.it [LEAS, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento, Lecce (Italy); Istituto Nazionale di Fisica Nucleare – Sezione di Lecce, Lecce (Italy); Nassisi, V.; Giuffreda, E.; Velardi, L. [LEAS, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento, Lecce (Italy); Istituto Nazionale di Fisica Nucleare – Sezione di Lecce, Lecce (Italy); Alifano, P.; Talà, A.; Tredici, S.M. [Dipartimento di Scienze e Tecnologie Biologiche ed Ambientali, Università del Salento, Lecce (Italy)

    2014-07-15

    The spreading of pathogens represents a serious threat for human beings. Consequently, efficient antimicrobial surfaces are needed in order to reduce risks of contracting severe diseases. In this work we present the first evidences of a new technique to obtain a highly antibacterial Ultra High Molecular Weight Polyethylene (UHMWPE) based on a non-stoichiometric titanium oxide coating, visible-light responsive, obtained through ion implantation.

  3. The Characterisation of Silicate Glasses Implanted with Ag+ Ions

    Czech Academy of Sciences Publication Activity Database

    Malinský, Petr; Macková, Anna; Nekvindová, P.; Švecová, B.; Kormunda, M.; Kolitsch, A.

    Melville: American Institute of Physics, 2011, s. 327-334. ISBN 978-0-7354-0986-6. ISSN 0094-243X. [11th International Conference on Applications of Nuclear Techniques. Crete (GR), 12.06.2011-18.06.2011] R&D Projects: GA ČR GA106/09/0125 Institutional research plan: CEZ:AV0Z10480505 Keywords : ion implantation * silicate glasses * metal nanoparticles * Rutherford Backscattering Spectroscopy * optical absorption Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  4. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    CERN Document Server

    Chen, ChienHsu; Jian, Hui-Shan; Niu, H

    2016-01-01

    Here we present a simple physical method to produce magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are distributed inside the NDs without affecting their crystal structure. So the NDs can be still functionalized through surface modification for targeted chemotherapy and the added magnetic property will make the NDs suitable for localized thermal treatment for cancer cells without the toxicity from the Fe atoms being directly in contact with the living tissue.

  5. Erbium ion implantation into different crystallographic cuts of lithium niobate

    Czech Academy of Sciences Publication Activity Database

    Nekvindová, P.; Švecová, B.; Cajzl, J.; Macková, Anna; Malinský, Petr; Oswald, Jiří; Kolitsch, A.; Špirková, J.

    2012-01-01

    Roč. 34, č. 4 (2012), s. 652-659. ISSN 0925-3467 R&D Projects: GA MŠk(CZ) LC06041; GA ČR GA106/09/0125; GA ČR(CZ) GAP106/10/1477 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : Lithium niobate * Erbium * Ion implantation * Luminescence Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.918, year: 2012

  6. Er+ medium energy ion implantation into lithium niobate

    Czech Academy of Sciences Publication Activity Database

    Švecová, B.; Nekvindová, P.; Macková, Anna; Oswald, Jiří; Vacík, Jiří; Grotzschel, R.; Spirkova, J.

    2009-01-01

    Roč. 267, 8-9 (2009), s. 1332-1335. ISSN 0168-583X R&D Projects: GA MŠk(CZ) LC06041; GA AV ČR IAA200480702 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521 Keywords : lithium niobate * erbium * ion implantation Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.156, year: 2009

  7. Urinary catheter with polyurethane coating modified by ion implantation

    International Nuclear Information System (INIS)

    A low friction urinary catheter that could be used without a lubricant is proposed in this work. A polyurethane coating was synthesised on the surface of a metal guide wire catheter. Ion implantation was applied to surface modify the polyurethane coating. FTIR ATR, wetting angle, AFM and friction tests were used for analysis. Low friction was found to be provided by the formation of a hard carbonised layer on the polyurethane surface

  8. Plasma source ion implantation of ammonia into electroplated chromium

    International Nuclear Information System (INIS)

    Ammonia gas (NH3) has been used as a nitrogen source for plasma source ion implantation processing of electroplated chromium. No evidence was found of increased hydrogen concentrations in the bulk material, implying that ammonia can be used without risking hydrogen embrittlement. The retained nitrogen dose of 2.1 x 1017 N-at/cm2 is sufficient to increase the surface hardness of electroplated Cr by 24% and decrease the wear rate by a factor of 4

  9. Some features of ion mixing during simultaneous ion implantation and deposition of metallic coatings

    CERN Document Server

    Pogrebnyak, A D; Mikhalev, A D; Shablya, V T; Yanovskij, V P

    2001-01-01

    The results on the Ta, Cu ions implantation into the aluminium substrate by simultaneous deposition of these ions in the form of coatings are presented. The complex structure of these coatings from the given elements in the substrate, as well as the increase in the microhardness, adhesion and corrosion resistance growth are determined. It is shown on the basis of the results of the secondary ions energy distribution, that intermetallic phases are formed in the substrate surface layer

  10. Formation of Nanoscale Intermetallic Phases in Ni Surface Layer at High Intensity Implantation of Al Ions

    Institute of Scientific and Technical Information of China (English)

    I.A.Bozhko; S.V.Fortuna; I.A.Kurzina; I.B.Stepanov; E.V.Kozlov; Yu.P. Sharkeev

    2004-01-01

    The results of experimental study of nanoscale intermetallic formation in surface layer of a metal target at ion implantation are presented. To increase the thickness of the ion implanted surface layer the high intensive ion implantation is used. Compared with the ordinary ion implantation, the high intensive ion implantation allows a much thicker modified surface layer. Pure polycrystalline nickel was chosen as a target. Nickel samples were irradiated with Al ions on the vacuum-arc ion beam and plasma flow source "Raduga-5". It was shown that at the high intensity ion implantation the fine dispersed particles of Ni3Al, NiAl intermetallic compounds and solid solution Al in Ni are formed in the nickel surface layer of 200 nm and thicker. The formation of phases takes place in complete correspondence with the Ni-Al phase diagram.

  11. Influence of heavy ion implantation on the microhardness of lif

    CERN Document Server

    Abu-Alazm, S M

    2003-01-01

    The paper presented microhardness measurements for pure lithium fluoride (LiF) implanted with Ar, Kr and Xe at doses ranged from 10 sup 9 up to 10 sup 1 2 ion/cm sup 2. Measurements were also performed for the microhardness after irradiation by electron and gamma rays. The data exhibited a large increase of microhardness of LiF using heavy ions in comparison with the unimplanted and irradiated samples with electrons and gamma rays. The influence of annealing the samples on the microhardness is also studied. The obtained results were interpreted according to the formation of F-centers in LiF.

  12. Stabilization of organic thin film transistors by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fraboni, B., E-mail: beatrice.fraboni@unibo.it [CNISM and Dipartimento di Fisica, Universita di Bologna, viale Berti Pichat 6/2, 40127 Bologna (Italy); Cosseddu, P. [Dipartimento di Ingegneria Elettrica ed Elettronica, Universita di Cagliari, piazza d' Armi, 09123 Cagliari, Italy and CNR-INFM S3 via Campi 213/a 41100 Modena (Italy); Wang, Y.Q.; Schulze, R.K. [Los Alamos National Laboratory MS-K771 Los Alamos NM 87545 (United States); Cavallini, A. [CNISM and Dipartimento di Fisica, Universita di Bologna, viale Berti Pichat 6/2, 40127 Bologna (Italy); Nastasi, M. [Los Alamos National Laboratory MS-K771 Los Alamos NM 87545 (United States); Bonfiglio, A. [Dipartimento di Ingegneria Elettrica ed Elettronica, Universita di Cagliari, piazza d' Armi, 09123 Cagliari, Italy and CNR-INFM S3 via Campi 213/a 41100 Modena (Italy)

    2012-08-01

    We report on the effects of low energy ion implantation (N and Ne) in the reduction and control of the degradation of pentacene organic thin film transistors (OTFTs) due to the exposure to atmosphere (i.e. oxygen and water). We have observed that a controlled damage depth distribution preserves the functionality of the devices, even if ion implantation induces significant molecular structure modifications, in particular a combination of dehydrogenation and carbonification effects. No relevant changes in the pentacene thin film thickness have been observed. The two major transport parameters that characterize OTFT performance are the carrier mobility and the threshold voltage. We have monitored the effectiveness of this process in stabilizing the device by monitoring the carrier mobility and the threshold voltage over a long time (over 2000 h). Finally, we have assessed by depth resolved X-ray Photoemission Spectroscopy analyses that, by selectively implanting with ions that can react with the hydrocarbon matrix (e.g. N{sup +}), it is possible to locally modify the charge distribution within the organic layer.

  13. Architecture and control of a high current ion implanter system

    International Nuclear Information System (INIS)

    The design of an ion implant system for use in production requires that special attention be given to areas of design which normally are not emphasized on research or development type ion implanters. Manually operated, local controls are replaced by remote controls, automatic sequencing, and digital displays. For ease of maintenance and replication the individual components are designed as simply as possible and are contained in modules of separate identities, joined only by the beam line and electrical interconnections. A production environment also imposes requirements for the control of contamination and maintainability of clean room integrity. For that reason the major portion of the hardware is separated from the clean operator area and is housed in a maintenance core area. The controls of a production system should also be such that relatively unskilled technicians are able to operate the system with optimum repeatability and minimum operator intervention. An extensive interlock system is required. Most important, for use in production the ion implant system has to have a relatively high rate of throughput. Since the rate of throughput at a given dose is a function of beam current, pumpdown time and wafer handling capacity, design of components affecting these parameters has been optimized. Details of the system are given. (U.K.)

  14. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon

    International Nuclear Information System (INIS)

    Highlights: •We investigate the effects of swift heavy-ion irradiation on He bubbles. •Growth in size and decrease of number density upon Ar-ion irradiation were found. •The mean size of extended defects increases upon Ar-ion irradiation. •Strong electronic excitation during Ar-ion irradiation produces athermal annealing at room temperature. -- Abstract: Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. 〈1 0 0〉-oriented silicon wafers were implanted with 30 keV helium to a dose of 3 × 1016 He+/cm2 at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed

  15. Simulation of neutron irradiation damage in Al-A5 alloy by ion implantation

    International Nuclear Information System (INIS)

    Ion implantation was used to simulate neutron irradiation damage in Al-A5 alloys. The damage was investigated by scanning electron microscopy. H+ and He+ ions were implanted up to a dose of 2x104 microcuri. It was found, that H+ ions caused the appearacnce of blisters and holes on the surface. The density of the blisters and holes is a function of implanted dose. The He+ ions caused sputtering of surface via flanking. (author)

  16. MODIFICATION OF WETTING PROPERTIES OF PMMA BY IMMERSION PLASMA ION IMPLANTATION

    OpenAIRE

    N. MIREAULT; Ross, G. G.

    2008-01-01

    Advancing and receding contact angles below 5° have been obtained on PMMA surfaces with the implantation of argon and oxygen ions. The ion implantations were performed by means of the Immersion Plasma Ion Implantation (IPII) technique, a hybrid between ion beams and immersion plasmas. Characterization of treated PMMA surfaces by means of XPS and its combination with chemical derivatization (CD-XPS) have revealed the depletion of oxygen and the creation of dangling bonds, together with the for...

  17. Effects of heavy ion implantation on crop mutagenesis

    International Nuclear Information System (INIS)

    12C ions with different energy (in MeV level) and flux were implanted into dry seeds of corn and winter wheat. 16O ions with different energy were implanted into dry seeds of winter wheat. The radiation damage of M1 generation seedling and mutagenic effects in M2 generation were studied. Results showed that within a certain energy level, radiation damage on M1 seedling increased with the energy increasing when the integral flux was given. And radiation damage for 12C ion beam with an energy of 12-16 MeV/u in corn, and 16O ion beam with an energy of 8 MeV/u in wheat were obviously greater than that of ion beam with penetration energy (45 MeV/u). The corn mutations induced by 12C ion beam could generate various types, such as dwarf, male sterility, albino, multi-ear, and most albinotic seedlings could turn to normal plants and set seeds. Earliness and dwarf were the most frequent mutations found in winter wheat induced by the two type of ions, and in winter wheat Yuandong 6, the earliness mutation frequency was up to 10.7% induced by 12C ion beam with an energy at 8 MeV/u and integral flux of 80 x 107/cm2, and dwarf mutation frequency reached 7.59% induced by an energy at 8 MeV/u and integral flux of 120 x 107/cm2. Variations of mutation frequencies were found among varieties of corn and wheat. (authors)

  18. Ion beam analysis of aluminium ion implanted titanium diboride thin films

    Science.gov (United States)

    Mollica, S.; Sood, D. K.; Evans, P. J.; Dytlewski, N.; Short, K. T.

    2002-05-01

    Titanium diboride is often selected for protective coatings due to its high hardness and wear resistance. However, its possible high temperature applications are limited because it exhibits poor oxidation resistance at elevated temperatures. Through ion beam modification, it was anticipated that a stable oxidation barrier could form via the formation of "metastable phases" not otherwise observed in stoichiometric TiB 2. Titanium diboride films were deposited onto single-crystal Si(1 0 0) substrates using DC magnetron sputtering. MEVVA ion implantation was then performed using an extraction voltage of 40 kV. Selected samples were subjected to post-implantation vacuum annealing prior to oxidation, thus comparing the behaviour of crystalline and amorphous films. Results show that aluminium ion implantation reduces the oxidation rate of DC magnetron sputtered titanium diboride thin films within the experimental temperature range.

  19. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene after ion etching and ion implantation

    Science.gov (United States)

    Shtansky, D. V.; Glushankova, N. A.; Kiryukhantsev-Korneev, F. V.; Sheveiko, A. N.; Sigarev, A. A.

    2011-03-01

    The ion-plasma treatment has been widely used for modifying the surface structure of polymers in order to improve their properties, but it can lead to destruction of the surface and, as a consequence, to an increase in their toxicity. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene (PTFE) after the ion etching (IE) and ion implantation (II) for 10 min with energy densities of 363 and 226 J/cm2, respectively, has been performed. It has been shown that, unlike the ion implantation, the ion etching results in the destruction of the polymer and in the appearance of the cytotoxicity. The factors responsible for this effect, which are associated with the bulk and surface treatment, as well as with the influence of the temperature, have been discussed.

  20. Carbon ion radiotherapy for pancreatic cancer

    International Nuclear Information System (INIS)

    The Heavy Ion Medical Accelerator in Chiba (HIMAC) is the world's first heavy ion accelerator complex dedicated to medical use in a hospital environment. Carbon ion therapy offers the potential advantages of improved dose localization and enhanced biological effects. It has been suggested that carbon ion therapy is effective against radioresistant pancreatic cancer. In April 2000, clinical studies examining the treatment of pancreatic cancer with carbon ions were begun at the HIMAC. As of February 2010, 48 patients treated with preoperative carbon ion radiotherapy and 89 patients treated for locally advanced pancreatic cancer were enrolled into the clinical trials. Both protocols are still ongoing. The interim results of these clinical trials suggest that carbon ion radiotherapy provides good local control and offers a survival advantage for patients with otherwise hard to cure pancreatic cancer, without unacceptable morbidity. (author)

  1. Simulation of charging phenomena in ion implantation into the micro structure pattern

    International Nuclear Information System (INIS)

    The charging of devices in high current ion implantation has become a serious problem. We have suggested that the negative ion has an effect on this problem. We have calculated the charging-up potential of insulated region considering the micro device structure, and compared the positive and negative ion implantation. We have reached the following results: the larger the grounded area and the bigger the secondary electron emission factor of grounded region, the surface potential of insulated region is lower in both positive and negative ion implantation. Especially in negative ion implantation the saturated surface potential is getting near zero volt. In negative ion implantation to the micro structure pattern, the surface voltage saturates at a low voltage, which is suitable to the ion implantation into semiconductor devices. (author)

  2. Carbon ion radiotherapy for sarcomas

    International Nuclear Information System (INIS)

    Principles of heavy ion therapy, its application to bone and soft tissue sarcomas and outline of its general state are described. The heavy ion therapy has advantages of its high dose distribution to the target and strong biological effect due to the Bragg peak formation and high linear energy transfer, respectively. The authors use carbon ion generated by Heavy Ion Medical Accelerator in Chiba (HIMAC) for the therapy of performance state 0-2 patients with the sarcomas unresectable, diagnosed pathologically, and of 60 y, 45% and teens, 8%) have been treated, whose tumor site has been the pelvis in 73%, volume >600 mL in 63%, tissue type of bone tumor in 70% (where cordoma has amounted to>200 cases). Five-year local control rate is found 71% and survival, 59%. In 175 therapeutically fresh cases with sacral cordoma of median age 67 y, with median clinical target volume 9 cm, treated with median dose 70.4 GyE/16 irradiations, the 8-y local control rate is found to be 69% and survival, 74%, within the median follow-up 54 months; with severe skin ulcer in 2 cases and deterioration of nervous dysfunction in 15 cases; suggesting the therapy is as effective and useful as surgical resection. At present, the therapy is not applicable to Japan health insurance. In the author's hospital, the heavy ion therapy has been conducted to total of >6,000 patients, which amounting to the largest number in the world. Now, 3 Japanese facilities can do the therapy as well and 3 countries in the world.(T.T.)

  3. Chemomechanical effect in ion-implanted magnesium oxide

    International Nuclear Information System (INIS)

    This letter reports the results of an investigation into the way in which ion implantation has been observed to alter the chemomechanical sensitivity of MgO surfaces. Samples of single crystal brace 100 brace habit MgO were implanted to doses of approx. 1014 and 3.33 x 1015 Ti+ cm-2 at 300 keV. Rather than measure the hardness directly a dislocation etch-pitting technique was used to monitor both the hardness of the surface and the anomalous indentation creep effects. Testing was carried out under the environments of moist air (ambient conditions) and the n-hexadecane, the latter being chosen as one known to produce a large chemomechanical effect in MgO. Indentations were made at a load of 10 gf on a (001) MgO surface. Figures show typical micrographs of etch-pitted indentations on the unimplanted and implanted MgO specimens indented both in air and under n-hexadecane for dwell times of 5 and 300 sec. For the unimplanted specimens the 300-sec dwell-time indentations in both air and n-hexadecane show more extensive dislocation motion than those made in air, for the approx. 1014Ti+ cm-2 implanted specimen under both environments for both dwell times, the indentation rosettes are much smaller than those in unimplanted MgO. The results are discussed. (author)

  4. Investigation of magnetism in Fe and Cu ion implanted indium oxide films

    International Nuclear Information System (INIS)

    Diluted magnetic semiconductor based on indium oxide has been prepared by transition metal ion implantation. Fe and Cu ions have been implanted into pulsed laser deposition prepared pure In2O3 films by metal vapor vacuum arc source with doses from 5 × 1015 cm−2 to 1 × 1017 cm−2, respectively. The implanted samples are annealed in the air subsequently. The structure of In2O3 films is characterized by X-ray diffraction. X-ray photoelectron spectroscopy measurements are applied to confirm the electronic state of the implanted ions. Superconducting quantum interference device measurements at room temperature disclose that the diamagnetic In2O3 films turned to be ferromagnetic after Fe and Cu ion implantation. The correlation between ferromagnetism and implantation conditions is tested. The ferromagnetism is attributed to the bound magnetic polarons formed by Fe, Cu ion implantation

  5. Modification of surface and barrier properties of polyethylene terephthalate and polycarbonate plastics by ion implantation

    International Nuclear Information System (INIS)

    Full text: Surface properties of two commercial plastics, SKYPET-BB polyethylene terephthalate (PET) film and Lexan (Polycarbonate) sheet, have been modified by implanting aluminium, silicon, nitrogen and hydrogen ions into samples of the plastics. Aluminium and silicon ions were implanted into the PET and Lexan samples at three different dose levels using a Metal Vapour Vacuum Arc Ion Source implantation system. Hydrogen and nitrogen ions were implanted at two different dose levels in a Plasma Immersion Ion Implantation Facility. Diffusion rates of Helium through the PET samples were determined at 19 deg C for pressures of He from 0.5 to 2.5atm. The diffusion rates of helium through the aluminium and silicon implanted samples were much lower than the diffusion rate through the unimplanted PET; nitrogen implantation had little effect. Copyright (2005) Australian Institute of Physics

  6. Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

    Directory of Open Access Journals (Sweden)

    David W. Berzins

    2012-07-01

    Full Text Available Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed to create the coatings, but detailed structural analysis of the coatings is generally lacking in the dental literature. Depending on application, the purpose of the coating is to provide increased surface hardness, abrasion/wear resistance, esthetics, and corrosion resistance, lower friction, as well as greater beneficial interaction with adjacent biological and material substrates. While many studies have reported on the achievement of these properties, a consensus is not always clear. Additionally, few studies have been conducted to assess the efficacy of the coatings in a clinical setting. Overall, titanium nitride and/or nitrogen ion implanted coated dental materials potentially offer advantages over uncoated counterparts, but more investigation is needed to document the structure of the coatings and their clinical effectiveness.

  7. Plasma ion implantation technology at Hughes Research Laboratories

    International Nuclear Information System (INIS)

    The plasma ion implantation (PII) project at Hughes Research Laboratories (HRL) has as its main objective the evaluation and application of PII technology to improve the tribological properties of metal and nonmetal materials used in aerospace, defense, and commercial applications. The HRL PII facility consists of a 4-ft-diamx8-ft-long vacuum chamber capable of implanting objects weighing up to 7000 lbs, and a high-power (100-kW), high-voltage (100-kV) pulse modulator to provide voltage pulses for implantation. Advanced plasma sources have been developed to produce atomic, as well as molecular, nitrogen and oxygen ions, and PII processes have been developed to treat metal and nonmetal materials. The HRL PII facility has been operational since 1989 and has been used for prototype demonstrations of PII technology to achieve (1) a 2--3x improved wear life of Co/WC drill bits used for printed-wiring-board fabrication, (2) an 8x reduced wear rate for TiN-coated cutting tools, and (3) a 2x increased surface hardness for a 7000-lb polymer object, 3 ft by 5 ft by 1 ft

  8. The effect of carbon impurities on the distribution of implanted iron atoms in titanium

    International Nuclear Information System (INIS)

    Moessbauer Spectroscopy along with Rutherford Backscattering Analysis (R.B.S.) has been used to analyse the chemical phases formed during implantation of 40 keV 57Fe into titanium foils at a dose of 2 x 101757Fe ions cm-2. Two different substrate temperatures were used, nominal room temperature and 550 deg C. For the foil implanted at 550 deg C the components of the Moessbauer spectrum were identified as α-iron and iron carbide. The room temperature implant, however, resulted in the formation of a highly disordered iron carbide which was converted to a mixture of 'crystalline' Fe3C and α-iron after annealing at 600 deg C. The implantations were repeated under cleaner conditions when the Moessbauer spectra of the samples were completely different with no evidence for the previously observed disordered phase. The implantation profiles as determined from R.B.S. were also different. Estimates of the levels of oxygen and carbon were determined from a (d,p) analysis of the samples. The relationship between the presence of impurities and the distribution of implanted iron atoms is discussed. (author)

  9. Role of ion mass on damage accumulation during ion implantation in Ge

    International Nuclear Information System (INIS)

    The effects of sub-amorphizing ion implantation on damage accumulation and point defect migration in Ge are investigated. We implanted ions with different masses in a Ge sample with embedded B doped deltas grown by molecular beam epitaxy, as markers for self-interstitial generation and migration. Implant fluences and energies were selected to generate similar depth profiles of the energy density released in nuclear collisions. We show that the accumulated damage decreases by decreasing the ion mass. This is associated with an increase of effective displacement energy in dilute cascade due to point defect migration and annihilation. The change of the effective displacement energy as a function of mass has been described and satisfactorily fitted together with data from the literature. We observed that B radiation enhanced diffusion increases by decreasing the ion mass, further supporting the above view, and indicates that the migration of self-interstitials has a role in the defect annihilation process during ion implantation in Ge. H deviates from the above scenario suggesting that damage stabilization occurs through the interaction of H with vacancies. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Effect of plasma immersion ion implantation in TiNi implants on its interaction with animal subcutaneous tissues

    Science.gov (United States)

    Lotkov, Aleksandr I.; Kashin, Oleg A.; Kudryavtseva, Yuliya A.; Shishkova, Darya K.; Krukovskii, Konstantin V.; Kudryashov, Andrey N.

    2016-08-01

    Here we investigated in vivo interaction of Si-modified titanium nickelide (TiNi) samples with adjacent tissues in a rat subcutaneous implant model to assess the impact of the modification on the biocompatibility of the implant. Modification was performed by plasma immersion ion processing, which allows doping of different elements into surface layers of complex-shaped articles. The aim of modification was to reduce the level of toxic Ni ions on the implant surface for increasing biocompatibility. We identified a thin connective tissue capsule, endothelial cells, and capillary-like structures around the Si-modified implants both 30 and 90 days postimplantation. No signs of inflammation were found. In conclusion, modification of TiNi samples with Si ions increases biocompatibility of the implant.

  11. Ion-implanted PLZT ceramics: a new high-sensitivity image storage medium

    International Nuclear Information System (INIS)

    Results were presented of our studies of photoferroelectric (PFE) image storage in H- and He-ion implanted PLZT (lead lanthanum zirconate titanate) ceramics which demonstrate that the photosensitivity of PLZT can be significantly increased by ion implantation in the ceramic surface to be exposed to image light. More recently, implantations of Ar and Ar + Ne into the PLZT surface have produced much greater photosensitivity enhancement. For example, the photosensitivity after implantation with 1.5 x 1014 350 keV Ar/cm2 + 1 x 1015 500 keV Ne/cm2 is increased by about four orders of magnitude over that of unimplanted PLZT. Measurements indicate that the photosensitivity enhancement in ion-implanted PLZT is controlled by implantation-produced disorder which results in marked decreases in dielectric constant and dark conductivity and changes in photoconductivity of the implanted layer. The effects of Ar- and Ar + Ne-implantation are presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage V/sub c/ as a function of near-uv light intensity for both unimplanted and implanted PLZT. The model, used in conjunction with calculations of the profiles of implantation-produced disorder, has provided the information needed for co-implanting ions of different masses, e.g., Ar and Ne, to improve photosensitivity

  12. Corrosion prevention of honeycomb core panel construction using ion implantation

    International Nuclear Information System (INIS)

    A process is described for preventing corrosion caused by atmospheric moisture in honeycomb core panel construction, said construction having two outer skin layers bonded to opposite sides of a honeycomb-shaped core, said process comprising the steps of: providing a core metal for a honeycomb-shaped core which is fabricated from aluminum or one of its alloys; immersing the core metal in an ion stream so that the core metal is bombarded with ions of a predetermined material, said ions penetrating through at least one surface of the core metal and being implanted a predetermined depth therein so that an alloy is formed between said core metal and said material which is impervious to corrosion; and deforming said core metal into a honeycomb-shaped structure so as to form the honeycomb-shaped core having front and back surfaces

  13. Metal ion implantation for large scale surface modification

    Energy Technology Data Exchange (ETDEWEB)

    Brown, I.G.

    1992-10-01

    Intense energetic beams of metal ions can be produced by using a metal vapor vacuum arc as the plasma discharge from which the ion beam is formed. We have developed a number of ion sources of this kind and have built a metal ion implantation facility which can produce repetitively pulsed ion beams with mean ion energy up to several hundred key, pulsed beam current of more than an ampere, and time averaged current of several tens of milliamperes delivered onto a downstream target. We've also done some preliminary work on scaling up this technology to very large size. For example, a 50-cm diameter (2000 cm[sup 2]) set of beam formation electrodes was used to produce a pulsed titanium beam with ion current over 7 amperes at a mean ion energy of 100 key. Separately, a dc embodiment has been used to produce a dc titanium ion beam with current over 600 mA, power supply limited in this work, and up to 6 amperes of dc plasma ion current was maintained for over an hour. In a related program we've developed a plasma immersion method for applying thin metallic and compound films in which the added species is atomically mixed to the substrate. By adding a gas flow to the process, well-bonded compound films can also be formed; metallic films and multilayers as well as oxides and nitrides with mixed transition zones some hundreds of angstroms thick have been synthesized. Here we outline these parallel metal-plasma-based research programs and describe the hardware that we've developed and some of the surface modification research that we've done with it.

  14. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaev, A.G., E-mail: nik@opee.hcei.tsc.ru [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Yushkov, G.Yu.; Oks, E.M. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Oztarhan, A. [Izmir University, Izmir 35140 (Turkey); Akpek, A.; Hames-Kocabas, E.; Urkac, E.S. [Bioengineering Department, Ege University, Bornova 35100, Izmir (Turkey); Brown, I.G. [Lawrence Berkeley National Laboratory, Berkeley, CA 94708 (United States)

    2014-08-15

    Highlights: • Ion implantation. • Anti-bacterial properties. • Textile polymer. • Vacuum arc ion source. - Abstract: Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal–gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the “inverse” concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

  15. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    International Nuclear Information System (INIS)

    Highlights: • Ion implantation. • Anti-bacterial properties. • Textile polymer. • Vacuum arc ion source. - Abstract: Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal–gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the “inverse” concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material

  16. Surface modification of polymeric materials by plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Polymer surfaces typically have low surface tension and high chemical inertness and so they usually have poor wetting and adhesion properties. The surface properties can be altered by modifying the molecular structure using plasma immersion ion implantation (PIII). In this work, Nylon-6 was treated using oxygen/nitrogen PIII. The observed improvement in the wettability is due to the oxygenated and nitrogen (amine) functional groups created on the polymer surface by the plasma treatment. X-ray photoelectron spectroscopy (XPS) results show that nitrogen and oxygen plasma implantation result in C-C bond breaking to form the imine and amine groups as well as alcohol and/or carbonyl groups on the surface. The water contact angle results reveal that the surface wetting properties depend on the functional groups, which can be adjusted by the ratio of oxygen-nitrogen mixtures

  17. Planar transistors and impatt diodes with ion implantation

    International Nuclear Information System (INIS)

    Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB

  18. Osteopontin (OPN is an important protein to mediate improvements in the biocompatibility of C ion-implanted silicone rubber.

    Directory of Open Access Journals (Sweden)

    Shao-liang Wang

    Full Text Available Medical device implants are drawing increasing amounts of interest from modern medical practitioners. However, this attention is not evenly spread across all such devices; most of these implantable devices can cause adverse reactions such as inflammation, fibrosis, thrombosis, and infection. In this work, the biocompatibility of silicone rubber (SR was improved through carbon (C ion implantation. Scanning electron microscopy (SEM, atomic force microscopy (AFM, X-ray photoelectron spectroscopy (XPS, and X-ray diffraction (XRD results confirmed that these newly generated carbon-implanted silicone rubbers (C-SRs had large, irregular peaks and deep valleys on their surfaces. The water contact angle of the SR surface decreased significantly after C ion implantation. C ion implantation also changed the surface charge distribution, silicone oxygen rate, and chemical-element distribution of SR to favor cell attachment. The dermal fibroblasts cultured on the surface C-SR grew faster and showed more typical fibroblastic shapes. The expression levels of major adhesion proteins, including talin-1, zyxin, and vinculin, were significantly higher in dermal fibroblasts cultured on C-SR coated plates than in dermal fibroblasts cultured on SR. Those same dermal fibroblasts on C-SRs showed more pronounced adhesion and migration abilities. Osteopontin (OPN, a critical extracellular matrix (ECM protein, was up-regulated and secreted from dermal fibroblasts cultured on C-SR. Matrix metalloproteinase-9 (MMP-9 activity was also increased. These cells were highly mobile and were able to adhere to surfaces, but these abilities were inhibited by the monoclonal antibody against OPN, or by shRNA-mediated MMP-9 knockdown. Together, these results suggest that C ion implantation significantly improves SR biocompatibility, and that OPN is important to promote cell adhesion to the C-SR surface.

  19. On the use of thin ion implanted Si detectors in heavy ion experiments

    International Nuclear Information System (INIS)

    We present test results on the use of thin ion implanted epitaxial Si detectors for registration of low- and medium energy heavy fragments in nuclear reactions. A linear energy response for very low energy nuclei has been observed. A test of 10 μm + 300 μm telescopes under realistic experimental conditions for heavy ion experiments exhibits the possibilities to use these detectors for the measurements of multifragmentation products. (authors)

  20. Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

    OpenAIRE

    Fedorenko, Yanina G.; Hughes, Mark A.; Colaux, Julien L.; Jeynes, C.; Gwilliam, Russell M.; Homewood, Kevin P.; Yao, Jin; Hewak, Dan W.; Lee, Tae-Hoon; Elliott, Stephen R; Gholipour, B.; Curry, Richard J.

    2014-01-01

    Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ion-beam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silico...

  1. Nonlinear optical properties of Sn+ ion-implanted silica glass

    International Nuclear Information System (INIS)

    The absolute value of the third-order nonlinear optical susceptibility, vertical stroke χ(3) vertical stroke , of Sn+ ion-implanted silica glass was found to be similar 10-6 esu. This value is as large as those reported for semiconductor-doped glasses. Silica glass substrates were implanted with Sn+ ions at an acceleration energy of 400 keV to a dose of 2x1017 ions/cm2 at room temperature. Metallic Sn microcrystallites of 4-20 nm in diameter were found to be embedded in the silica glass matrix. The average volume fraction of the Sn microcrystallites was evaluated to be 28%. vertical stroke χ(3) vertical stroke and the imaginary part of the dielectric function, Im ε, had peaks at the same wavelength of 500 nm owing to surface plasmon resonance. The peak width of vertical stroke χ(3) vertical stroke was nearly half of that of Im ε, which can be explained by an effective medium theory. ((orig.))

  2. Antibacterial PVD coatings doped with silver by ion implantation

    Science.gov (United States)

    Osés, J.; Palacio, J. F.; Kulkarni, S.; Medrano, A.; García, J. A.; Rodríguez, R.

    2014-08-01

    The antibacterial effect of certain metal ions, like silver, has been exploited since antiquity. Obviously, the ways to employ the biocide activity of this element have evolved throughout time and it is currently used in a wide range of clinical applications. The work presented here reports the results of an investigation focused on combining the protective properties of PVD coatings with the biocide property of silver, applied by ion implantation. For this purpose, chromium nitride layers were doped with silver implanted at two different doses (5 × 1016 and 1 × 1017 ion/cm2) at 100 keV of energy and perpendicular incidence. Full characterization of the coatings was performed to determine its topographical and mechanical properties. The concentration profile of Ag was analyzed by GD-OES. The thickness of the layers, nano-hardness, roughness, wear resistance and coefficient of friction were measured. Finally, the anti-bacterial efficacy of the coatings was determined following the JIS Z-2801:2010 Standard. The results provide clear insights into the efficacy of silver for antibacterial purposes, as well as on its influence in the mechanical and tribological behaviour of the coatings matrix.

  3. Mechanical and tribological properties of amorphous carbon films deposited on implanted steel substrates

    International Nuclear Information System (INIS)

    Hydrogen-free amorphous carbon (a-C) films were deposited using unbalanced magnetron sputtering technique from graphite targets on AISI 440C steel substrates implanted with (1) carbon (C), (2) titanium (Ti), and (3) titanium followed by carbon (Ti+C), respectively. After deposition, the adhesion strength of the films was examined by scratch test and Rockwell-C indentation test. The tribological performance of the films was evaluated by a typical ball-on-disk tribometer and a reciprocating wear tester. A dynamic impact tester was also carried out to study the fatigue strength of the films. In order to study the effect of the pre-treatment of steel substrates by means of ion implantation on the actual performance of a-C films, the implanted substrates were investigated by using X-ray photoelectron spectroscopy and nano-indentation, from which the composition depth profile as well as the hardness (H) and elastic modulus (E) depth profiles could be accurately obtained. As a result, due to higher contents of carbide bonds appeared at the outmost surface of the C and Ti+C implanted substrates, a critical load over 65 N was obtained, indicating good scratch resistance of the films. The combination of high interfacial strength and high plastic deformation resistance (H3/E2) of the Ti+C implanted substrates led to a higher load-carrying capacity and longer duration lifetime in the sliding wear test. In the dynamic impact test, the good adhesion strength and high toughness of C and Ti+C implanted substrates improved the impact resistance of the films

  4. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    International Nuclear Information System (INIS)

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO2 matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO2 by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV 127I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

    International Nuclear Information System (INIS)

    In the near future devices which are fabricated from shallow arrays of few and single atoms will exploit quantum mechanical rules to perform useful functions including quantum computation. Fabrication of these devices presents formidable technological challenges. We have developed a single ion implantation system that is capable of verifiable fabrication of single donor devices using 14 keV 31P ions implanted into ultra-pure, high resistivity silicon substrates based on the technique of Ion Beam Induced Charge (IBIC). A detection system with integrated detector electrodes registers the charge transient from a single ion impact which is used to signal the implantation of an ion into the substrate. We describe here the use of IBIC with MeV ions to study the charge collection efficiency of the detector electrodes. By using three dimensional numerical technology computer-aided design (TCAD) models for the decrease in the IBIC signal as a function of distance from the detector electrode, we can obtain an accurate measurement of the resistivity of the silicon substrate, allowing confirmation of the values specified by the supplier, and providing us with confidence in the numerical models used by TCAD for simulation. This technique has advantages over resistivity measurements by four-point probes because it is spatially resolved, probes through the intact oxide, and can be done without making contact to the device in the area of the probe

  7. Structure analysis of bimetallic Co-Au nanoparticles formed by sequential ion implantation

    Science.gov (United States)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Song, Shu-peng; chen, Hong; Zhang, Ke; Xiong, Zu-zhao; Ji, Ling-ling; Dai, Hou-mei; Wang, Deng-jing; Lu, Jian-duo; Wang, Ru-wu; Zheng, Li-rong

    2016-08-01

    Co-Au alloy Metallic nanoparticles (MNPs) are formed by sequential ion implantation of Co and Au into silica glass at room temperature. The ion ranges of Au ions implantation process have been displayed to show the ion distribution. We have used the atomic force microscopy (AFM) and transmission electron microscopy (TEM) to investigate the formation of bimetallic nanoparticles. The extended X-ray absorption fine structure (EXAFS) has been used to study the local structural information of bimetallic nanoparticles. With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Hence, three oscillations, respectively, Co-O, Co-Co and Co-Au coordination are determined.

  8. Directional distribution of Burgers vectors of dislocation loops in ion-implanted silicon

    International Nuclear Information System (INIS)

    The possible directional distributions of Burgers vectors of perfect dislocation loops and dipoles formed in the silicon single crystals after ion implantation and annealing have been studied. (author)

  9. A study on V+ ion-implanted TiO2 photocatalytic films

    International Nuclear Information System (INIS)

    In order to improve photocatalytic property of TiO2 films, the films were implanted with 40 keV V+ ions to doses of 0.6 x l016, l x l016, 3 x l016 or 6 x l016 ions/cm2. Optical band gap of the V+ ion-implanted TiO2 films were measured by a spectrophotometer. The results show that the optical band gap of TiO2 films decreased with the increasing implantion dose. Methyl orange (MO) in aqueous solution was catalyzed by the ion-implanted TiO2 films under visible light. (authors)

  10. SURFACE MODIFICATION OF TITANIUM FILMS WITH SODIUM ION IMPLANTATION: SURFACE PROPERTIES AND PROTEIN ADSORPTION

    Institute of Scientific and Technical Information of China (English)

    K. Y. Cai

    2007-01-01

    Sodium implanted titanium films with different ion doses were characterized to correlate their ion implantation parameters. Native titanium films and ion implanted titanium films were characterized with combined techniques of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and light microscopy (LM). The surface presented increased sodium concentration on treated titanium films with ion dose increasing, except for the group with the highest ion dose of 4× 1017 ions/cm2. XPS depth profiling displayed that sodium entered titanium film around 25-50 nm depth depending on its implantation ion dose. AFM characterization showed that sodium ion implantation treatment changed the surface morphology from a relatively smooth titanium film to rough surfaces corresponding to different implantation doses.After sodium implantation, implanted titanium films presented big particles with island structure morphology. The surface morphology and particle growth displayed the corresponding trend.Fibrinogen adsorption on these titanium films was performed to correlate with the surface properties of treated titanium films. The results show that protein adsorption on ion-implanted samples with dose of 2 × 1017 and 4 × 1017 are statistically higher (p < 0. 01) than samples treated with dose of 5×1016 and 1 ×1017, as well as the control samples.

  11. Structure and phase transformations in tungsten at ion implantation

    International Nuclear Information System (INIS)

    Full text: It is known, that on structural - phase transformations in ionic-implanted layer essential value has interaction of metals with elements of gas environment of an implanter (C, N, O). In the given work results on ionic - beam alloying of tungsten by ions of nitrogen. As an initial material the monocrystalline foil from tungsten by cleanliness of 99.96 % thickness 0.5 mm, cut out as rectangular in the sizes 8·1.5 mm2 is used. With the purpose of removal of the deformed layers samples after machining were exposed to electrolytic polishing. Implantation of ions of nitrogen with energy 70 keV dozes l.87·l017cm-2, 3.74·l017cm-2 and 5.6·1017cm-2 was spent in vacuum (l,3·10-3 Pa) at density of a current ≅1 mA ·cm-2. Thermal annealing carried out in vacuum (6.6·10-3 Pa) through 100 deg.C in a range of temperatures 773-1373 K within one hour each sample. Identification of structure of the modified superficial layers was carried under the roentgenograms received with use of a narrow bunch monochromatized of CuK-α- radiation, directed under a sliding 6 deg. corner to a surface of a sample. At formation of textured phases for specification of results additional shootings were carried out at corners of falling 6 and 15 deg. It is established, that after implantation of ions of nitrogen on roentgenograms there is a set of lines from a polycrystalline phase which represents nitride of tungsten W2N with densely packed FCC-structure. Together with lines of this phase the weak set lines of oxide of tungsten WO3 with monoclinic - structure which arises due to implantation by a method of feedback of oxide from an atmosphere of residual gases of the accelerator is registered also. The analysis of the received results in the following. The relation of nuclear radius of nitrogen to nuclear radius of tantalum makes 0.50. In this case, it agrees the assumptions put forward earlier, based on Hegg's rule, at implantation should be formed mainly simple densely packed

  12. Simulation and visualization of ion-implantation in diamond

    International Nuclear Information System (INIS)

    We have explored aspects of ion implantation in diamonds with molecular dynamics and tightbinding atomistic simulations. Relevant experiments and their potential applications as well as our computer models and computational approaches are described. Our simulations have been designed to answer questions proposed by experimental researchers concerning optimal laboratory schedules for the preparation of samples with potential applications to diamond membranes and NV centers for quantum computers. Simulation and visualization of results enable us to peek inside samples where experimental techniques cannot tread. In order to provide the requisite Brazilian component a new connection between these models and bootstrap percolation is made

  13. Characterization of Silicate Glasses Implanted with Ag+ Ions

    Czech Academy of Sciences Publication Activity Database

    Malinský, Petr; Macková, Anna; Nekvindová, P.; Švecová, B.; Kormunda, M.; Kolitsch, A.

    Crete: 11th International Conference on Applications of Nuclear Techniques, 2011, s. 25-25. [11th International Conference on Applications of Nuclear Techniques. Crete (GR), 12.06.2011-18.06.2011] R&D Projects: GA ČR GA106/09/0125 Grant ostatní: UJEP Usti nad Labem(CZ) iga ujep 5322215000901 Institutional research plan: CEZ:AV0Z10480505 Keywords : ion implantation * silicate glasses * metal nanoparticles * Rutherford Backscattering Spectroscopy * optical absorption Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  14. Laboratory based space experiments using an ion implanter

    International Nuclear Information System (INIS)

    The Accelerator Centre at the University of Manitoba has been active in recent years in the study of materials relevant to the space industry and in the characterization of such materials. Plans are in place to extend this work on the ion implantation of materials to new areas of research in which more esoteric physical processes are examined on Earth prior to the development of structures for space vehicles or planetary study. This paper consists of two parts, the first a summary of recent research to be published in refereed scientific literature, the second an outline of future plans using existing facilities. (author)

  15. Raman scattering in silicon disordered by gold ion implantation

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vacík, Jiří; Vorlíček, Vladimír; Voseček, Václav

    2010-01-01

    Roč. 247, č. 8 (2010), s. 2022-2026. ISSN 0370-1972. [8th International Conference on Optics of Surfaces and Interfaces (OSI-VIII). Ischia, 07.09.2009-11.09.2009] R&D Projects: GA AV ČR IAA200480702; GA AV ČR IAA400100701; GA AV ČR(CZ) KAN400480701; GA ČR GA106/09/1264 Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100520 Keywords : ion implantation * Raman spectra * Rutherford backscattering spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.344, year: 2010

  16. Titanium and aluminium ions implanted by plasma on polyethylene

    International Nuclear Information System (INIS)

    The ion implantation by plasma of titanium and aluminum on polyethylene thin films (PE) is presented. The results indicate that the polymers reacted firstly with the oxygen and/or nitrogen carrying gases, and later its received the metallic particles that formed thin films. The stainless steel and the titanium formed a single phase. The metallic layers grew in the interval of 1 to 2 nm/min, its are thin, but enough to change the hardness of the polymer that it is increased in more of 20 times. (Author)

  17. Ion implantation. It's role in silicon device technology

    International Nuclear Information System (INIS)

    During the past four years, as a result of the severe demands placed on the production of metal oxide, large-scale integrated circuits (MOS/LSI), ion implantation has moved from the research laboratory on to the factory floor. The success of this activity can be judged by the large number of different types of MOS/LSI circuits on the market. In this article, the author assesses the factors which have made this industrial application possible, the present extent of development and the likely technical trends in the future. (orig.)

  18. Modification of plasma polymer films by ion implantation

    OpenAIRE

    Santos Deborah Cristina Ribeiro dos; Rangel Rita de Cássia Cipriano; Mota Rogério Pinto; Cruz Nilson Cristino da; Schreiner Wido Herwig; Rangel Elidiane Cipriano

    2004-01-01

    In this work, thin polymer films were prepared from acetylene and argon radiofrequency (13.56 MHz, 80 W) glow discharges. Post-deposition treatment was performed by plasma immersion ion implantation in nitrogen or helium glow discharges (13.56 MHz, 70 W). In these cases, samples were biased with 25 kV negative pulses. Exposure time to the bombardment plasma, t, ranged from 900 to 7200 s. Chemical composition of the film surfaces was investigated by X-ray Photoelectron Spectroscopy and the res...

  19. Glass carbon surface modified by the fluorine ion irradiation

    Science.gov (United States)

    Teranishi, Yoshikazu; Ishizuka, Masanori; Kobayashi, Tomohiro; Nakamura, Isao; Uematu, Takahiko; Yasuda, Takeshi; Mitsuo, Atsushi; Morikawa, Kazuo

    2012-02-01

    Application of nano and micro fabrication techniques in industry requires solution to some crucial problems. One of the significant problems is the sticking interface between mold surface and imprinted polymer. In this study, we report a solution to the sticking interface problem by modification of nano imprinting mold using fluorine ion implantation. After the fluorine implantation, anti sticking layer appeared on the nano imprinting mold surface. After the implantation, a mold made from glass like carbon was patterned by focused ion beam lithography. The pattern was made up of word "TIRI". The line width was varied with 300 nm, 500 nm, and 1 μm. The line depth was about 200 ˜ 300 nm. The average depth of implanted fluorine was approximately 90 nm. After imprinting, the resin was removed from the mold by mechanical lift-off process. Transferred pattern was observed and confirmed by a scanning electron microscope (SEM) and an atomic force microscope (AFM). The pattern transferred from mold to resin was found to be successful.

  20. Glass carbon surface modified by the fluorine ion irradiation

    International Nuclear Information System (INIS)

    Application of nano and micro fabrication techniques in industry requires solution to some crucial problems. One of the significant problems is the sticking interface between mold surface and imprinted polymer. In this study, we report a solution to the sticking interface problem by modification of nano imprinting mold using fluorine ion implantation. After the fluorine implantation, anti sticking layer appeared on the nano imprinting mold surface. After the implantation, a mold made from glass like carbon was patterned by focused ion beam lithography. The pattern was made up of word “TIRI”. The line width was varied with 300 nm, 500 nm, and 1 μm. The line depth was about 200 ∼ 300 nm. The average depth of implanted fluorine was approximately 90 nm. After imprinting, the resin was removed from the mold by mechanical lift-off process. Transferred pattern was observed and confirmed by a scanning electron microscope (SEM) and an atomic force microscope (AFM). The pattern transferred from mold to resin was found to be successful.

  1. Glass carbon surface modified by the fluorine ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Teranishi, Yoshikazu, E-mail: teranishi.yoshikazu@iri-tokyo.jp [Tokyo Metropolitan Industrial Technology Research Institute (TIRI), Nishigaoka 3-13-10, Kitaku, Tokyo 115-8586 (Japan); Ishizuka, Masanori [Tokyo University, Inst. of Phys. and Chem. Res., RIKEN (Japan); Kobayashi, Tomohiro [Chuo University, Inst. of Phys. and Chem. Res., RIKEN (Japan); Nakamura, Isao; Uematu, Takahiko; Yasuda, Takeshi; Mitsuo, Atsushi; Morikawa, Kazuo [Tokyo Metropolitan Industrial Technology Research Institute (TIRI), Nishigaoka 3-13-10, Kitaku, Tokyo 115-8586 (Japan)

    2012-02-01

    Application of nano and micro fabrication techniques in industry requires solution to some crucial problems. One of the significant problems is the sticking interface between mold surface and imprinted polymer. In this study, we report a solution to the sticking interface problem by modification of nano imprinting mold using fluorine ion implantation. After the fluorine implantation, anti sticking layer appeared on the nano imprinting mold surface. After the implantation, a mold made from glass like carbon was patterned by focused ion beam lithography. The pattern was made up of word 'TIRI'. The line width was varied with 300 nm, 500 nm, and 1 {mu}m. The line depth was about 200 {approx} 300 nm. The average depth of implanted fluorine was approximately 90 nm. After imprinting, the resin was removed from the mold by mechanical lift-off process. Transferred pattern was observed and confirmed by a scanning electron microscope (SEM) and an atomic force microscope (AFM). The pattern transferred from mold to resin was found to be successful.

  2. Carbon nanostructures produced through ion irradiation

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several nanostructures we produced by ion irradiation have been reviewed in this paper. By using ions to irradiate two ultrahigh molecular weight polyethylene targets respectively, it was found that small fullerenes C20 and C26 were grown, adding two members to the fullerene family. Meanwhile, crystalline diamonds also have been produced by Ar+ ions irradiation of graphite. In the experiment of double ions Ni+ and Ar+ irradiation, nanoscale argon bubbles formed. On the other side, when multi-wall carbon nanotubes were irradiated by C+, many MWCNTs evolved to amorphous carbon nanowires and amorphous carbon nanotubes. And there are possible welding in the crossed nanotubes.

  3. Enhancing antibacterial properties of UHMWPE via ion implantation

    Science.gov (United States)

    Nassisi, Vincenzo; Delle Side, Domenico; Velardi, Luciano; Alifano, Pietro; Talà, Adelfia; Maurizio Tredici, Salvatore

    2012-10-01

    In the last decades, the demand for biomaterials of antimicrobial quality sensibly increased. The essential properties of these materials must be the biocompatibility, wettability, durability and their antibacterial characteristics. One of the most important biomaterial for medical applications is the ultra high molecular weight polyethylene (UHMWPE) that it is used to make components of prosthetic knee, hip and shoulder. It is well known that the presence in UHMWPE of Ag atoms increase its antibacterial properties while Cu and its alloys are known as natural antimicrobial materials. In this work it is proposed a dedicated laser ion source (LIS) accelerator to perform ion implantation together with a systematic study of the surface properties of UHMWPE samples treated with different metals in order to modify their antibacterial characteristics. The proposed technique consists in the application of a dose of specific ions inside the first layer of the sample to be treated. This goal can be effectively achieved if the ions are preventively accelerated. This technique seems to be interesting, since it can open the way to an easier realization of antibacterial materials using various metal ions.

  4. Metal ion implantation in inert polymers for strain gauge applications

    International Nuclear Information System (INIS)

    Metal ion implantation in inert polymers may produce ultra-thin conducting films below the polymer surface. These subsurface films are promising structures for strain gauge applications. To this purpose, polycarbonate substrates were irradiated at room temperature with low-energy metal ions (Cu+ and Ni+) and with fluences in the range between 1 x 1016 and 1 x 1017 ions/cm2, in order to promote the precipitation of dispersed metal nanoparticles or the formation of a continuous thin film. The nanoparticle morphology and the microstructural properties of polymer nanocomposites were investigated by glancing-incidence X-ray diffraction and transmission electron microscopy (TEM) measurements. At lower fluences (16 ions/cm2) a spontaneous precipitation of spherical-shaped metal nanoparticles occurred below the polymer top-surface (∼50 nm), whereas at higher fluences the aggregation of metal nanoparticles produced the formation of a continuous polycrystalline nanofilm. Furthermore, a characteristic surface plasmon resonance peak was observed for nanocomposites produced at lower ion fluences, due to the presence of Cu nanoparticles. A reduced electrical resistance of the near-surface metal-polymer nanocomposite was measured. The variation of electrical conductivity as a function of the applied surface load was measured: we found a linear relationship and a very small hysteresis.

  5. Modification of magnetic properties of polyethyleneterephthalate by iron ion implantation

    International Nuclear Information System (INIS)

    Fe+ ions (40 keV) were implanted into polyethyleneterephthalate (PET) films with fluences of (0.25-1.5) x 1017 cm-2. Magnetic properties of the synthesised Fe:PET composites were studied using superconducting quantum interference device (SQUID) technique in temperature range of 2-300 K. For range of fluences (0.5-0.75) x 1017 cm-2 the samples reveal superparamagnetic behaviour at room temperature. At fluences above 0.75 x 1017 cm-2 the strong increase of magnetisation and transition to ferromagnetic properties are registered. Analysis of the magnetic hysteresis loops suggests an easy plane magnetic anisotropy similar to that found for thin magnetic films. Zero-field-cooled (ZFC) and field-cooled (FC) temperature measurements of magnetisation are found to be in agreement with earlier observed formation of Fe nanoparticles (NPs) in the implanted layers. The growth and agglomeration of the NPs forming the quasi-continuous labyrinth-like structure in the polymer film at the highest implantation fluence of 1.5 x 1017 cm-2 is an origin for the transition to the ferromagnetic properties

  6. Dose changes of the surface layers of steel in implantation of argon ions

    International Nuclear Information System (INIS)

    In ion implantation, especially at high doses, interesting processes includes the condensation and implantation into the surface layers of the matrix of C in the gaseous state in the form of C-O and C-H in the vacuum chamber of ion-beam equipment and, in particular, in oil pumping. The implanted C influences the formation of the ion-implanted layer as a result of its high service of chemical activity. However, in addition to the C compounds, the chamber of the equipment for residual gas also contains oxygen, taking into account the fact that ion implantation is carried out using mean vacuum of the level of approximately 10-4 Pa. In implantation of the ions of active elements (phosphorus or boron) into 20Kh13 steel there was no significant effect of oxygen of the chemical composition of the surface less of the target at all examined doses. At the initial doses of 1x1017 ion/cm2, in implantation of the ions of active elements the surface layers are amorphised, and with increase of the implantation dose of the P+ ions the structure undergoes recrystallisation, and at a dose of 5x1017 ion/cm2 the surface layers contained a texturised polycrystal; in the case of implantation of the B+ ions, recrystallisation does not take place. In this case, in the implantation of the ions of chemical active elements the initial stages characterised by the formation of groups (complexes) of the atoms of the metal-metalloid with the covalent type of chemical bonding with further formation of precipitates with the structure of texturised polycrystals identical with the texturisation of thin films of the substrate. The different situation is observed in implantation of the ions of the inert gas -argon

  7. Ion beam technology applications study. [ion impact, implantation, and surface finishing

    Science.gov (United States)

    Sellen, J. M., Jr.; Zafran, S.; Komatsu, G. K.

    1978-01-01

    Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

  8. Tailored surface modification by ion implantation and laser treatment

    International Nuclear Information System (INIS)

    An important trend in materials science is the use of increasingly sophisticated methods to control composition and microstructure during processing. Near-surface modification by ion implantation and laser treatment is one of these new methods for tailoring material properties. Novel materials have been formed which are far from thermodynamic equilibrium and which exhibit unexpected and useful properties. The most extensively studied property changes include modified electrical properties of semiconductors and improved wear, hardness, and corrosion resistance of metals. The high degree of control available with energetic beams allows relations between microstructure and properties to be systematically investigated at the atomic level. This article illustrates how ion and laser beam modification is being applied to advance both the technology and the exploratory science of materials

  9. Optical waveguides fabricated by nitrogen ion implantation in fused silica

    Science.gov (United States)

    Liu, Chun-Xiao; Fu, Li-Li; Zheng, Rui-Lin; Guo, Hai-Tao; Zhou, Zhi-Guang; Li, Wei-Nan; Lin, She-Bao; Wei, Wei

    2016-02-01

    We report on the fabrication of waveguides in fused silica using 4.5-MeV nitrogen ion implantation with a fluence of 5.0×1014 ions/cm2. The prism-coupling method was employed to measure the effective refractive indices of guiding modes at the wavelengths of 632.8 and 1539 nm. The effective refractive indices of the first few modes were higher than that of the substrate. The refractive index profiles at 632.8 and 1539 nm were reconstructed by the reflectivity calculation method. Positive index changes were induced in the waveguide layers. The end-face coupling method was used to measure the near-field light intensity distributions at the wavelength of 632.8 nm and the finite-difference beam propagation method was applied to simulate the guided mode profile at the wavelength of 1539 nm. The waveguide structures emerge as candidates for integrated photonic devices.

  10. Investigation of the influence of argon ions implantation on the wear of sintered carbides

    International Nuclear Information System (INIS)

    The paper relates the results of investigations how influences argon ions implantation into sintered carbides used in machining of metals. Research of sintered carbides surface microstructure showed that implantation effected the little increasing of its isotropy and improved the most universal roughness high parameters and forecasted bearing surface. t the same time the roughness altitudes were slightly 'scarified'. Measuring of cutting forces during turning showed that implanted edges are entailing lower value of cutting forces than not implanted edges. The reason is that the friction of implanted carbides is decreasing about 17%. Implantation of argon with the dose 1016 effects that abrasive wear of edges during cutting is two times lower that at implanted edges, but only so long like implanted layer exists. Then the wear intensity is the same like not implanted edges. In the paper conclusions concerning of further investigations of the helium group elements implantation are given. (author). 8 refs, 12 figs, 4 tabs

  11. An ion beam transport design optimization in a medium range ion implanter system

    International Nuclear Information System (INIS)

    An improvement of the transport beam focusing model in an ion implanter system has been achieved, with the definition of the main optical elements used and their parameters effect on charged particles. The equations of motion of charged particles and matrices in each optical element have been derived, with consideration of the motion in different planes. In the first assumption, the four-dimensional beam ellipsoid, the beam transport is accomplished in zero order (drift space and dipole) and first order (quadrupole and magnet). In the second assumption, the particle distribution is normal in the area of its space coordinates. Calculations of the emittance and brightness factors of the ion beam are found to be more affected by the energy of charged particles. The emittance and brightness have constant normalized values. A comparison and evaluation was made of the location and the effect of the designed parameters for each optical element within the available ion implantation design system. (author)

  12. Ion-implantation and analysis for doped silicon slot waveguides

    Directory of Open Access Journals (Sweden)

    McCallum J. C.

    2012-10-01

    Full Text Available We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL and Rutherford backscattering spectrometry (RBS to analyse these structures. Slot waveguide structures in which light is confined to a nanometre-scale low-index region between two high-index regions potentially offer significant advantages for realisation of electrically-pumped Si devices with optical gain and possibly quantum optical devices. We are currently investigating an alternative pathway in which high quality thermal oxides are grown on silicon and ion implantation is used to introduce the Er and Si-ncs into the SiO2 layer. This approach provides considerable control over the Er and Si-nc concentrations and depth profiles which is important for exploring the available parameter space and developing optimised structures. RBS is well-suited to compositional analysis of these layered structures. To improve the depth sensitivity we have used a 1 MeV α beam and results indicate that a layered silicon-Er:SiO2/silicon structure has been fabricated as desired. In this paper structural results will be compared to Er photoluminescence profiles for samples processed under a range of conditions.

  13. Ion implantation and MOS structures in SiC

    International Nuclear Information System (INIS)

    A theoretical study of stoichiometric disturbance (SMD) due to ion implantation in SiC is reported. In addition, experimental work on the material characterization of 3C SiC layers using Schottky diodes and metal-oxide-semiconductor (MOS) structures are presented. In studying theoretical aspects of ion implantation in SiC, a method is developed to calculate the depth distribution of the stoichiometric disturbance (SMD) resulting from this process. Projectile range distributions at intermediate energies are deduced from look-up tables of known range statistics. This results in a simpler method with little loss of accuracy as compared to existing procedures which use the Boltzmann transport equation. A calculation of the SMD for implantation of Al in SiC suggests that the SMD may be responsible for otherwise unexplained distortions in the annealed Al profile. In the efforts of the characterization of the 3C SiC material, the effects of oxidation of the SiC substrate have been studied at room temperature by capacitance-voltage (C-V) measurements on MOS structures formed by a double-contact mercury probe. Standard methods have been implemented to extract various device parameters from the C-V characteristics. These include the calculation of substrate doping profile, effective fixed oxide trap density, N1, and interface trap density, D/sub it/. The effective N/sub f/ value was found to be 4 to 7 x 1011 cm-2. The value of d/sub it/ is obtained from a comparison of the measured characteristics to a theoretical high-frequency curve and it reveals a concentration of approximately 1011 cm-2eV-1 across the energy gap, with a peak on the order of 1012 cm-2eV-1, centered at 0.6 eV below the conduction band edge

  14. Effects of N+ ion implantation into cubic BN film for tribological usages

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN) film was deposited onto a silicon substrate by means of the magnetically enhanced ion-plating method developed by the authors, and ion implantation was performed as a post-treatment using N+ under various conditions. In this study, the crystal structure and tribological properties against diamond of the c-BN film treated by ion implantation were investigated. The results showed that implantation depth increased with an increase in implanting energy even on this c-BN, and it was found that ion damage to the c-BN phase was less when the dosage fell below 8 x 1015 ions cm-2. It was also found that ion implantation was effective in decreasing the friction coefficient when the treated film was contacted with diamond. (orig.)

  15. Heavy ion time-of-flight ERDA of high dose metal implanted germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dytlewski, N.; Evans, P.J.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Wielunski, L.S. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics; Bunder, J. [New South Wales Univ., Wollongong, NSW (Australia). Wollongong Univ. Coll

    1996-12-31

    With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.

  16. Correlation between deuterium retention and microstructure change for tungsten under triple ion implantation

    International Nuclear Information System (INIS)

    Triple ion (C+, D2+ and He+) implantation onto a tungsten substrate was performed to investigate the hydrogen isotope and microstructure behavior under fusion conditions. The results are compared to the ones from dual ion (C+ and D2+) implanted tungsten. It was found that the TDS spectrum for the triple ion implanted sample is quite different from that for the dual ion implanted sample and the deuterium retention decreased when He+ was added to the incident beam indicating that the helium prevented deuterium trapping. TEM images show that dislocations and dislocation loops were introduced in tungsten in both the dual and triple ion irradiation experiments and helium bubbles were formed on the triple ion implanted tungsten. After heating up to 1173 K, not only the dislocations and dislocation loops but also helium bubbles remained on the triple ion implanted sample, but the dislocations and dislocation loops were moved and/or annihilated on the dual ion implanted sample. The formation of a WC layer was inhibited in the triple ion implanted sample.

  17. Effect of disorder and defects in ion-implanted semiconductors electrical and physiochemical characterization

    CERN Document Server

    Willardson, Robert K; Christofides, Constantinos; Ghibaudo, Gerard

    2014-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.Electrical and Physicochemical Characterization focuses on the physics of the annealing kine

  18. Characterization and control of wafer charging effects during high-current ion implantation

    International Nuclear Information System (INIS)

    EEPROM-based sense and memory devices provide direct measures of the charge flow and potentials occurring on the surface of wafers during ion beam processing. Sensor design and applications for high current ion implantation are discussed

  19. Studies of iron exposed to heavy ion implantation using positron annihilation spectroscopy

    Science.gov (United States)

    Horodek, P.; Dryzek, J.; Skuratov, V. A.

    2016-05-01

    Variable energy positron beam and positron lifetime spectroscopy were used to study pure iron exposed to irradiation with 167 MeV Xe26+ heavy ions with different doses of 1012, 1013, 5×1013, 1014 ions/cm2. The positron lifetime spectroscopy revealed the presence of large cluster of about 15-27 vacancies and dislocations. The dislocations are distributed at the depth of about 18 μm i.e. almost twice deeper than the ion implantation range from the surface exposed to the heavy ions implantation. Possible explanation is the long-range effect attributed to the ion implantation into materials.

  20. On the influence of carbon implantation on the structural properties of hard TiN coatings studied by glancing incidence X-ray diffraction

    International Nuclear Information System (INIS)

    In this work, we investigate the structural properties and, in particular, the residual stress of carbon-implanted TiN coatings by means of glancing incidence X-ray diffraction and secondary ion mass spectrometry techniques. The coatings were grown by ion-beam physical vapor deposition on steel substrates and subsequently implanted at 100 keV with carbon doses of 1x1017,3x1017 and 7x1017 ions/cm2. The carbon depth profiles obtained by secondary ion mass spectrometry enable us to choose the more appropriate X-ray beam incidence angles in order to detect the structural variations in proximity to the implanted region. The X-ray results indicate notable variations both in the crystallinity and in the residual stress and such modifications depend on the carbon dose and penetration depth. In particular, in the coating implanted with a dose of 1x1017 ions/cm2 the initial compressive residual stress is reduced until a penetration depth of at least 400 nm. In addition, the lattice is re-crystallized in the first 100 nm. The coatings implanted with doses of 3x1017 and 7x1017 ions/cm2 have a surface region (100 nm thick) in the tensile stress state and a peak of compressive stress well above the non-implanted value at a depth between Rp and 2Rp. Moreover, the effect of C+ implantation is to reduce the lattice parameters for all the investigated samples. Such results can be explained by considering the defect distribution induced by the implantation process and the competition between the implantation amorphization and the self-annealing behavior

  1. 21 CFR 878.3500 - Polytetrafluoroethylene with carbon fibers composite implant material.

    Science.gov (United States)

    2010-04-01

    ... composite implant material. 878.3500 Section 878.3500 Food and Drugs FOOD AND DRUG ADMINISTRATION... Prosthetic Devices § 878.3500 Polytetrafluoroethylene with carbon fibers composite implant material. (a) Identification. A polytetrafluoroethylene with carbon fibers composite implant material is a porous...

  2. Annealing of PEEK, PET and PI implanted with Co ions at high fluencies

    International Nuclear Information System (INIS)

    The properties of implanted polymers strongly depend on the implantation ion fluence and on the properties of the implanted atoms. The stability of synthesized nano-structures during further technological steps like annealing is of importance for their possible applications. Polyimide (PI), polyetheretherketone (PEEK), and polyethyleneterephtalate (PET) were implanted with 40 keV Co+ ions at room temperature at fluences ranging from 0.2 × 1016 cm−2 to 1.0 × 1017 cm–2 and annealed at a temperature of 200 °C. The implanted depth profiles of as-implanted and annealed samples, determined by the RBS method, were compared with the results of SRIM 2012 simulations. The structural and compositional changes of the implanted and subsequently annealed polymers were characterized by RBS and UV–vis spectroscopy. The surface morphology of as-implanted and annealed samples was examined by the AFM method and their electrical properties by sheet resistance measurement

  3. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    International Nuclear Information System (INIS)

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 1016 cm−2. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and silver, few

  4. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; van der Berg, N. G.; Malherbe, J. B.; Hlatshwayo, T. T.; Theron, C. C.; Buys, A. V.; Botha, A. J.; Wendler, E.; Wesch, W.

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 1016 cm-2. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and silver, few

  5. The biomedical properties of polyethylene terephthalate surface modified by silver ion implantation

    International Nuclear Information System (INIS)

    Polyethylene terephthalate (PET) film is modified by Ag ion implantation with a fluence 1 x 1016 ions/cm2. The results of X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that silver has been successfully implanted into the surface of PET. The PET samples modified by silver ion implantation have significantly bactericidal property. The capacity of the staphylococcus epidermidis (SE) adhered on the Ag+ implanted PET surface is 5.3 x 106 CFU/ml, but the capacity of the SE adhered on the untreated PET film is 2.23 x 107 CFU/ml. The thromboembolic property is evaluated by in vitro platelet adhesion test, and there is not statistically difference between the untreated PET and the Ag+ implanted PET for the number of adhered and activated platelets. The PET implanted by silver ion has not acute toxicity to endothelial cell (EC) which was evaluated by the release of lactate dehydrogenase (LDH) test

  6. Influence of temperature on nitrogen ion implantation of Ti6Al4V alloy

    International Nuclear Information System (INIS)

    In order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperature of 100, 200, 400 and 600 degree C with a dose of 4 x 1018 ions·cm-2. Using the Plasma Source Ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600 degree C. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface

  7. Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

    Science.gov (United States)

    Zhao, Qing; Zheng, Yong-zhen; Mo, Zhi-tao; Tang, De-li; Tong, Hong-hui; Geng, Man

    2001-04-01

    In order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600°C with a dose of 4×1018 ions cm-2. Using the Plasma Source Ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), x-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600°C. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

  8. High energy electron irradiation of ion implanted MOS structures with different oxide thickness

    International Nuclear Information System (INIS)

    The effects of 11 MeV electron irradiation of boron ion implanted Si-SiO2 structures with different oxide thickness have been investigated by thermally stimulated charge (TSC) method. It has been shown that electron irradiation of implanted with 20 keV boron ions structures results in the formation of a trap spectrum which locates in the same temperature range as the spectrum of the as-implanted samples. The density of radiation-induced interface traps after electron irradiation has been found to depend on the disposition of the maximum of the previously implanted boron ions with respect to the Si-SiO2 interface

  9. Aqueous corrosion behaviour of ion-implanted metals

    International Nuclear Information System (INIS)

    We can now look back at 10 years of application of ion beams in corrosion studies. Therefore, after the introduction, we first attempt to give an overview of what has been accomplished during this period in the field of aqueous corrosion, with emphasis on developments in more recent years. Then we present a more detailed discussion of some particular examples of research which make use of different types of corrosion protection mechanism as well as applications of different types of ion beam technique to metal surfaces. These examples include the application of ion beam mixing and ion-beam-assisted vapour deposition to (i) the prevention of localized corrosion, (ii) the reduction of hydrogen uptake by metals (the formation of 'migration barriers'), (iii) corrosion protection by means of ion-beam-mixed monolayers and multilayers of aluminium and boron and (iv) ion-beam-modified carbon layers and their influence on the corrosion of mild steel. Following these examples, we attempt to deduce recommendations for the future application of ion beams in corrosion science. (orig.)

  10. Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    International Nuclear Information System (INIS)

    Highlights: • We propose the mechanism for the dopant dose loss effect in heavy ion implantation. • First, the implanted atoms agglomerate into liquid melts during annealing. • These melts become mobile and cause the polycrystalline phase formation. • The melts then move along grain boundaries and are forced out of the sample. • We also identify the triggering conditions for these events. - Abstract: From the observations of the annealing process of ultra-shallow Sn and Pb implanted Si, we propose the mechanism and the triggering conditions for the dopant dose loss effect commonly observed in heavy ion-implanted silicon. The results of high-resolution Rutherford backscattering spectrometry, high-resolution cross-sectional transmission electron microscopy and Monte Carlo simulations are presented. With these results, we construct a complete chain of events that leads to the loss of most of the implanted ions. First, the implanted atoms agglomerate into liquid melts during high temperature electron beam annealing, causing polycrystalline phase formation. Next, liquid phase movement takes place along grain boundaries, and the implanted atoms are forced out of the surface layer as the grain boundaries disappear during grain growth, leaving behind low concentrations of residual atoms. The specific conditions that trigger such a sequence of processes are identified

  11. Probabilistic predictive modelling of carbon nanocomposites for medical implants design.

    Science.gov (United States)

    Chua, Matthew; Chui, Chee-Kong

    2015-04-01

    Modelling of the mechanical properties of carbon nanocomposites based on input variables like percentage weight of Carbon Nanotubes (CNT) inclusions is important for the design of medical implants and other structural scaffolds. Current constitutive models for the mechanical properties of nanocomposites may not predict well due to differences in conditions, fabrication techniques and inconsistencies in reagents properties used across industries and laboratories. Furthermore, the mechanical properties of the designed products are not deterministic, but exist as a probabilistic range. A predictive model based on a modified probabilistic surface response algorithm is proposed in this paper to address this issue. Tensile testing of three groups of different CNT weight fractions of carbon nanocomposite samples displays scattered stress-strain curves, with the instantaneous stresses assumed to vary according to a normal distribution at a specific strain. From the probabilistic density function of the experimental data, a two factors Central Composite Design (CCD) experimental matrix based on strain and CNT weight fraction input with their corresponding stress distribution was established. Monte Carlo simulation was carried out on this design matrix to generate a predictive probabilistic polynomial equation. The equation and method was subsequently validated with more tensile experiments and Finite Element (FE) studies. The method was subsequently demonstrated in the design of an artificial tracheal implant. Our algorithm provides an effective way to accurately model the mechanical properties in implants of various compositions based on experimental data of samples. PMID:25658876

  12. Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell

    International Nuclear Information System (INIS)

    Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3 × 1016 ions/cm2 was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity. - Highlights: ► Mg ion was coated onto surface of SLA treated titanium via vacuum arc source ion implantation method. ► The morphological characteristics did not change after Mg ion implantation. ► Mg ion implanted SLA Ti is highly cytocompatible. ► Initial cell adhesion of MSCs is improved by Mg ion implantation. ► Mg ion implantation improved

  13. Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Beom-Su; Kim, Jin Seong [Wonkwang Bone Regeneration Research Institute, Wonkwang University, Iksan 570-749 (Korea, Republic of); Bonecell Biotech Inc., 77, Dunsan-ro, Seo-gu, Daejeon 302-830 (Korea, Republic of); Park, Young Min [DIO Corporation, 66, Centum seo-ro, Haeundae-gu, Busan (Korea, Republic of); Choi, Bo-Young [Department of Oral and maxillofacial Surgery, Wonkwang University Daejeon Dental Hospital, Daejeon 302-830 (Korea, Republic of); Lee, Jun, E-mail: omslee@wku.ac.kr [Wonkwang Bone Regeneration Research Institute, Wonkwang University, Iksan 570-749 (Korea, Republic of); Bonecell Biotech Inc., 77, Dunsan-ro, Seo-gu, Daejeon 302-830 (Korea, Republic of)

    2013-04-01

    Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3 × 10{sup 16} ions/cm{sup 2} was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity. - Highlights: ► Mg ion was coated onto surface of SLA treated titanium via vacuum arc source ion implantation method. ► The morphological characteristics did not change after Mg ion implantation. ► Mg ion implanted SLA Ti is highly cytocompatible. ► Initial cell adhesion of MSCs is improved by Mg ion implantation. ► Mg ion implantation

  14. Characterization of green electroluminescent diodes obtained by boron ion implantation into ZnTe

    International Nuclear Information System (INIS)

    Reproducible electroluminescent ZnTe diodes were made by boron ion implantation. ZnTe crystals were obtained by the Bridgman method in solution at 920 deg C, or by the travelling solvent method at lower temperatures. Their physical properties are shortly described as well as the ion implantation technics used

  15. Electrical doping of Hg Cd Te by ion implantation and heat treatments

    International Nuclear Information System (INIS)

    The general properties of junctions made by ion implantation in Hg Cd Te semiconductor are recalled structure of junctions made by implantation damage, defects, anneals, junctions made by active impurities. The effect of acceptor evolution in this semiconductor after heat treatments and a study of the kinetics are presented. Very high quality devices with very small size and large two-dimensional arrays are shown to be possibly achieved using ion implantation technique of junction formation in the semiconductor epilayers grown by LPE

  16. Influence of the ion implantation on the nanoscale intermetallic phases formation in Ni-Ti system

    International Nuclear Information System (INIS)

    Full text: The ion implantation at a high intensity mode is an effective method for modification of the surface properties of metals and alloys. Improvement of mechanical and tribological properties of irradiated materials using the high intensity implantation is connected with an element composition and microstructure modification of the surface and subsurface layers. One shows a great interest in intermetallic phase's synthesis by ion implantation, because of unique physical-mechanical properties of the intermetallic compounds. The influence of the irradiation conditions on the structural state and surface properties of implanted materials is not clear enough. The study of the factors influencing on the formation of the surface ion - alloyed layers of metal targets having the high tribological and mechanical properties by high intensity ion implantation is actual. The aim of the present work is a study of the microstructure, phase composition, physical and mechanical properties of the ion-alloyed Ni surfaces formed at high intensity implantation of Ti ions. The implantation Ti ions into Ni samples at high intensity mode was realized using ion source 'Raduga - 5'. The implantation Ti ions into Ni was carried out at accelerating voltage 20 kV for 2 h. The regimes were differed in the samples temperature (580 - 700 K), the distance from the ion implanted samples to the ion source (0.43-0.93 m) and the dose of irradiated ions (0.3·1018-2.9·1018 ion/cm-2). The element composition of the implanted samples was analyzed by the electron spectroscopy. The structural-phase state of the Ni ion-modified layers was investigated by the transmission electron microscopy and X-ray diffraction methods. Additionally, the investigation of mechanical and tribological properties of the implanted Ni samples was carried out. It was established that the maximum thickness of the ion-alloyed nickel layers at high intensity mode allows forming the nanoscale intermetallic phases (NiTi, Ni3

  17. Data compilation for depth distribution of ion-induced damage and ion-implanted atoms

    International Nuclear Information System (INIS)

    In the recent progress of utilizing ion bombardment technique to ion implantation and neutron irradiation simulation, the experimental data have accumulated concerning the depth distribution of deposited atoms and induced damage along ion incident direction. In the ion-induced damage experiments, the density of point defects or void swelling has been investigated as a function of depth. In this study, the data available until the present time are compiled and compared with theoretical prediction represented by E-DEP-1 computer code. It is recognized in general that the experimentally observed damage peak is deeper than that E-DEP-1 calculated using the LSS electronic stopping parameter, k sub(LSS). Agreement between the observation and calculation can be obtained using a modified electronic stopping parameter k = 0.8 - 0.9 k sub(LSS). With regard to the deposited atoms by ion bombardment, the peak of the observed distribution is deeper in some cases and shallower in other cases than that calculated by E-DEP-1, indicating that the modified electronic stopping parameter k is oscillating relative to k sub(LSS). This oscillatory behavior is not recognized in the damage distribution. It is suggested that future work should be made to determine the distribution of ion-induced damage in relation to that of the deposited atoms, since the defect evolution may directly be related to the implanted atoms. (author)

  18. Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

    Science.gov (United States)

    Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

    2016-03-01

    The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently.

  19. Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

    Science.gov (United States)

    Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

    2016-01-01

    The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently. PMID:26955791

  20. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

    Directory of Open Access Journals (Sweden)

    Jeffrey C. McCallum

    2012-01-01

    Full Text Available Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.